WorldWideScience

Sample records for single layer dielectric

  1. Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

    KAUST Repository

    Hota, Mrinal Kanti

    2017-06-08

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

  2. Transparent Flash Memory Using Single Ta2O5Layer for Both Charge-Trapping and Tunneling Dielectrics.

    Science.gov (United States)

    Hota, Mrinal K; Alshammari, Fwzah H; Salama, Khaled N; Alshareef, Husam N

    2017-07-05

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta 2 O 5 layer is used simultaneously as a charge-trapping layer and a tunneling layer. This is different from conventional flash memory cells where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ∼10.7 V. Moreover, the flash memory device shows a stable 2-bit memory performance and good reliability, including data retention for more than 10 4 s and endurance performance for more than 100 cycles. The use of a common charge-trapping and tunneling layer can simplify the fabrication of advanced flash memories.

  3. Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET

    Science.gov (United States)

    Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Lei, Jiacheng; Chen, Kevin J.

    2017-12-01

    Remote N2 plasma treatment is explored as a surface functionalization technique to deposit ultrathin high-k dielectric on single-layer MoS2. The ultrathin dielectric is used as a tunneling contact layer, which also serves as an interfacial layer below the gate region for fabricating top-gate MoS2 metal–oxide–semiconductor field-effect transistors (MOSFETs). The fabricated devices exhibited small hysteresis and mobility as high as 14 cm2·V‑1·s‑1. The contact resistance was significantly reduced, which resulted in the increase of drain current from 20 to 56 µA/µm. The contact resistance reduction can be attributed to the alleviated metal–MoS2 interface reaction and the preserved conductivity of MoS2 below the source/drain metal contact.

  4. Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3 dielectric and imprinted electrodes

    Science.gov (United States)

    Hourdakis, Emmanouel; Nassiopoulou, Androula G.

    2017-07-01

    Metal-Insulator-Metal (MIM) capacitors with a high capacitance density and low non-linearity coefficient using a single-layer dielectric of barrier-type anodic alumina (Al2O3) and an imprinted bottom Al electrode are presented. Imprinting of the bottom electrode aimed at increasing the capacitor effective surface area by creating a three-dimensional MIM capacitor architecture. The bottom Al electrode was only partly nanopatterned so as to ensure low series resistance of the MIM capacitor. With a 3 nm thick anodic Al2O3 dielectric, the capacitor with the imprinted electrode showed a 280% increase in capacitance density compared to the flat electrode capacitor, reaching a value of 20.5 fF/μm2. On the other hand, with a 30 nm thick anodic Al2O3 layer, the capacitance density was 7.9 fF/μm2 and the non-linearity coefficient was as low as 196 ppm/V2. These values are very close to reaching all requirements of the last International Technology Roadmap for Semiconductors for MIM capacitors [ITRS, http://www.itrs2.net/2013-itrs.html for ITRS Roadmap (2013)], and they are achieved by a single-layer dielectric instead of the complicated dielectric stacks of the literature. The obtained results constitute a real progress compared to previously reported results by our group for MIM capacitors using imprinted electrodes.

  5. Dielectric properties of layered FeGaInS{sub 4} single crystals in an alternating electric field

    Energy Technology Data Exchange (ETDEWEB)

    Mammadov, F. M. [Azerbaijan National Academy of Sciences, Nagiyev Institute of Catalysis and Inorganic Chemistry (Azerbaijan); Niftiyev, N. N., E-mail: namiq7@bk.ru [Azerbaijan State Pedagogical University (Azerbaijan)

    2016-09-15

    The results of investigations of the frequency and temperature dependences of dielectric losses and the imaginary part of the dielectric permittivity in FeGaInS{sub 4} single crystals are presented. Their experimental values are determined. It is established that the loss tangent and the imaginary part of the permittivity of FeGaInS{sub 4} single crystals in a field with frequencies of 10{sup 4}–10{sup 6} Hz decrease inversely proportional to the frequency (tanδ ~ 1/ω), and the conductivity is characterized by the band–hopping mechanism. For FeGaInS{sub 4}, the relaxation time is calculated, and it is established that there is a mechanism of electron polarization caused by thermal motion in this crystal.

  6. High thermal conductivity lossy dielectric using a multi layer configuration

    Science.gov (United States)

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-01-01

    Systems and methods are described for loss dielectrics. A loss dielectric includes at least one high dielectric loss layer and at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. A method of manufacturing a loss dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. The systems and methods provide advantages because the loss dielectrics are less costly and more environmentally friendly than the available alternatives.

  7. Single- and multi-layered all-dielectric ENG, MNG, and DNG material parameter extraction by use of the S-parameter method

    DEFF Research Database (Denmark)

    Wu, Yunqiu; Arslanagic, Samel

    2016-01-01

    The multi-layer two-dimensional(2-D) epsilon-negative (ENG), mu-negative (MNG) and double-negative (DNG) materials are investigated in this work. The unit cells consist of infinite dielectric cylinders of which the size and permittivity are chosen to excite the dominant electric and magnetic dipole...... modes inside the structure. This enables the ENG, MNG, and DNG behaviors. The material parameters are obtained from the simulated S-parameters by use of the Nicholson-Ross-Weir method. For the 2-layer structure in particular, the results show a possibility of DNG realization with a negative refractive...

  8. Single-layer graphene on silicon nitride micromembrane resonators

    DEFF Research Database (Denmark)

    Schmid, Silvan; Bagci, Tolga; Zeuthen, Emil

    2014-01-01

    for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling...

  9. Large energy storage efficiency of the dielectric layer of graphene nanocapacitors

    Science.gov (United States)

    Bezryadin, A.; Belkin, A.; Ilin, E.; Pak, M.; Colla, Eugene V.; Hubler, A.

    2017-12-01

    Electric capacitors are commonly used in electronic circuits for the short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately existing capacitors cannot store sufficient energy to be able to replace common electrochemical energy storage systems. Here we examine the energy storage capabilities of graphene nanocapacitors, which are tri-layer devices involving an Al film, Al2O3 dielectric layer, and a single layer of carbon atoms, i.e., graphene. This is a purely electronic capacitor and therefore it can function in a wide temperature interval. The capacitor shows a high dielectric breakdown electric field strength, of the order of 1000 kV mm-1 (i.e., 1 GV m-1), which is much larger than the table value of the Al2O3 dielectric strength. The corresponding energy density is 10-100 times larger than the energy density of a common electrolytic capacitor. Moreover, we discover that the amount of charge stored in the dielectric layer can be equal or can even exceed the amount of charge stored on the capacitor plates. The dielectric discharge current follows a power-law time dependence. We suggest a model to explain this behavior.

  10. Large energy storage efficiency of the dielectric layer of graphene nanocapacitors.

    Science.gov (United States)

    Bezryadin, A; Belkin, A; Ilin, E; Pak, M; Colla, Eugene V; Hubler, A

    2017-12-08

    Electric capacitors are commonly used in electronic circuits for the short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately existing capacitors cannot store sufficient energy to be able to replace common electrochemical energy storage systems. Here we examine the energy storage capabilities of graphene nanocapacitors, which are tri-layer devices involving an Al film, Al 2 O 3 dielectric layer, and a single layer of carbon atoms, i.e., graphene. This is a purely electronic capacitor and therefore it can function in a wide temperature interval. The capacitor shows a high dielectric breakdown electric field strength, of the order of 1000 kV mm -1 (i.e., 1 GV m -1 ), which is much larger than the table value of the Al 2 O 3 dielectric strength. The corresponding energy density is 10-100 times larger than the energy density of a common electrolytic capacitor. Moreover, we discover that the amount of charge stored in the dielectric layer can be equal or can even exceed the amount of charge stored on the capacitor plates. The dielectric discharge current follows a power-law time dependence. We suggest a model to explain this behavior.

  11. Dielectric behaviour of strontium tartrate single crystals

    Indian Academy of Sciences (India)

    Unknown

    dielectric loss (tan δ) as functions of frequency and temperature. Ion core type polarization is seen in the tempera- ture range 75–180°C, and above 180°C, there is interfacial polarization for relatively lower frequency range. One observes dielectric dispersion at lower frequency presumably due to domain wall relaxation.

  12. Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

    KAUST Repository

    Alshareef, Husam N.

    2010-11-19

    Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

  13. Flexible Capacitive Tactile Sensor Based on Micropatterned Dielectric Layer.

    Science.gov (United States)

    Li, Tie; Luo, Hui; Qin, Lin; Wang, Xuewen; Xiong, Zuoping; Ding, Haiyan; Gu, Yang; Liu, Zheng; Zhang, Ting

    2016-09-01

    Flexible tactile sensors are considered as an effective way to realize the sense of touch, which can perform the synchronized interactions with surrounding environment. Here, the utilization of bionic microstructures on natural lotus leaves is demonstrated to design and fabricate new-type of high-performance flexible capacitive tactile sensors. Taking advantage of unique surface micropattern of lotus leave as the template for electrodes and using polystyrene microspheres as the dielectric layer, the proposed devices present stable and high sensing performance, such as high sensitivity (0.815 kPa -1 ), wide dynamic response range (from 0 to 50 N), and fast response time (≈38 ms). In addition, the flexible capacitive sensor is not only applicable to pressure (touch of a single hair), but also to bending and stretching forces. The results indicate that the proposed capacitive tactile sensor is a promising candidate for the future applications in electronic skins, wearable robotics, and biomedical devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Polymer/metal multi-layers structured composites: A route to high dielectric constant and suppressed dielectric loss

    Science.gov (United States)

    Feng, Yu; Li, Meng-Lu; Li, Wei-Li; Zhang, Tian-Dong; Zhao, Yu; Fei, Wei-Dong

    2018-01-01

    In order to obtain polymer-based composites with a high dielectric constant and suppressed dielectric loss, polyvinylidene fluoride (PVDF)/silver (Ag) multi-layer structured composites were fabricated via vacuum evaporation and hot-press methods. The dielectric constant of the PVDF/Ag(5/4) composite (including five PVDF layers and four Ag layers) is up to 31, and dielectric loss can be suppressed below 0.02 (smaller than that of pure PVDF) at 1 kHz. The enhanced interfacial polarization in multi-layer structured composites is determined via temperature dependence of electrical modulus, which is regarded as the origin of dielectric constant enhancement. The suppressed dielectric loss at low frequency is attributed to the difficulty in the formation of a percolation conductive network in this multi-layer system. This promising multi-layer strategy could be generalized to a variety of polymers to develop polymer-based composites with a high dielectric constant and low dielectric loss.

  15. Dielectric behaviour of strontium tartrate single crystals

    Indian Academy of Sciences (India)

    Unknown

    on second harmonic generation, crystal oscillators and rescuators, and devices to central laser emission are ... molecular structure of tartrate, monohydrotartrate and water indents. Since the data on dielectric properties .... Design of sample holder used for measurements. Evacuation of the holder is not required. 1. Sample ...

  16. Damage evaluation in graphene underlying atomic layer deposition dielectrics

    Science.gov (United States)

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A.

    2015-08-01

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors.

  17. Attenuated total reflection angular spectra of a system of alternating plasma-dielectric layers.

    Science.gov (United States)

    Kovacs, G J; Scott, G D

    1978-11-15

    The attenuated total reflection (ATR) angular spectra of a five-film system have been observed. Successive layers of Ag-LiF-Ag-LiF-Ag are evaporated onto the base of a glass prism. Surface plasma wave resonances corresponding to coupled oscillations at the plasma-dielectric interfaces were found for p-polarization. Guided light modes coupled between the two dielectric layers were observed in both p- and s-polarized spectra. If guided mode reflectance resonances occur at less than the critical angle they have associated with them resonance transmissions. In general the ATR resonances of the five-film system occur as doublets, which form a splitting of the resonances of a single dielectric slab bounded by Ag layers. The resonant oscillations are demonstrated by detailed calculations of the Poynting vector field and electric field oscillations, which also help in understanding the source of discrepancies between experimental and calculated ATR spectra. These discrepancies are thought to be due largely to the surface roughness of evaporated LiF films. The roughness is modeled as thin cermet layers at the LiF-Ag interfaces, and the optical constants of the cermets are calculated by the Maxwell Garnett theory. When the ATR spectra are then computed with the pseudolayers inserted, much improved agreement with experiment can be obtained.

  18. CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

    Science.gov (United States)

    Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

    2014-01-01

    Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

  19. Elliptical metallic hollow fiber inner-coated with non-uniform dielectric layer.

    Science.gov (United States)

    Tang, Xiaoli; Yu, Zhuzheng; Tu, Xuecou; Chen, Jian; Argyros, Alexander; Kuhlmey, Boris T; Shi, Yiwei

    2015-08-24

    We report on the fabrication and characterization of an elliptical hollow fiber inner coated with a silver layer and a dielectric layer for polarization maintaining and low loss transmission of terahertz (THz) radiation. The primary purpose of adding the dielectric layer is to prevent the silver layer from oxidation. The thickness of the dielectric layer is non-uniform owing to the surface tension of the coating, which was initially applied as a liquid. Transmission loss and polarization maintenance are experimentally characterized. Effects of the dielectric layer on transmission properties are analyzed by comparing the fiber to Ag-only fiber. Results show that a dielectric layer with thickness less than λ/10 can effectively decreases the power distributed on the metal surface and thus can practically reduce loss resulting from roughness of the silver layer. Bending effects on transmission loss and polarization maintenance are also investigated.

  20. Light transmission coefficients by subwavelength aluminum gratings with dielectric layers

    Energy Technology Data Exchange (ETDEWEB)

    Blinov, L. M., E-mail: lev39blinov@gmail.com; Lazarev, V. V.; Yudin, S. G.; Artemov, V. V.; Palto, S. P.; Gorkunov, M. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Crystallography and Photonics Federal Research Center) (Russian Federation)

    2016-11-15

    Spectral positions of plasmon resonances related to boundaries between a thin aluminum layer and dielectrics (air, glass, VDF–TrFE 65/35 ferroelectric copolymer, and indium tin oxide (ITO)) have been determined in the transmission spectra of aluminum gratings of three types with 30 × 30 μm{sup 2} dimensions and 350-, 400-, and 450-nm line periods. Experimental results agree well with spectral positions of plasmon resonances calculated for the normal incidence of TM-polarized light. In addition, maximum values of transmission coefficients in the region of λ ≈ 900–950 nm have been determined for glass–Al–copolymer and glass–ITO–Al–copolymer structures. These values are close to 100%, which shows that the effective optical aperture is two times greater than the geometric areas of slits.

  1. Atomic and molecular layer activation of dielectric surfaces

    Science.gov (United States)

    Senkevich, John Joseph

    Strong interaction between the material deposit and substrate is critical to stable deposits and interfaces. The work presented here focuses on the surface activation of dielectric surfaces and oxidized metal surfaces to promote the chemisorption of palladium (II) hexafluoroacetylacetonate (PdII (hfac)2). The goal is to develop reliable, robust metallization protocols, which enable strong interactions between the metal and substrate. SiO2, air exposed Ta, Trikon, and SiLK were activated with sulfur or phosphorus. Two types of activations were developed; one based on self-assembled chemistry, and the other a plasma-assisted process. Activation of the surface using self-assembly techniques was carried out using mercaptan-terminated silane and tetrasulfide silane. The resulting films were characterized by variable angle spectroscopic ellipsometry, contact angle goniometry, and X-ray photoelectron spectroscopy. Tetrasulfide silane sources films exhibit self-limiting behavior, even in the presence of water vapor; whereas mercaptan-terminated silane sourced films tend to be thicker. The surface activations using atomic layers of sulfur and phosphorus were carried out in a rf plasma chamber using hydrogen sulfide and phosphine sources, respectively. The activations were studied as functions of rf power, system pressure, and substrate material. Results show that higher rf powers and lower system pressures promote greater surface coverages by sulfur with a reduced oxidation state. The activated dielectrics show evidence of PdII(hfac)2 chemisorption, in contrast to non-activated surfaces. The binding energy shift of the Pd3d 5/2 XPS peak towards elemental Pd provides evidence for the dissociative chemisorption of PdII(hfac)2. The extent of dissociation depends on the substrate temperature and the activation method used. The conclusions of the work presented here have implications for metallization using highly polarizable transition metals. Specifically, it can be applied to

  2. Arsenic sulfide layers for dielectric reflection mirrors prepared from solution

    Science.gov (United States)

    Matějec, Vlastimil; Pedlikova, Jitka; BartoÅ, Ivo; Podrazký, Ondřej

    2017-12-01

    Chalcogenide materials due to high refractive indices, transparency in the mid-IR spectral region, nonlinear refractive indices, etc, have been employed as fibers and films in different photonic devices such as light amplifiers, optical regenerators, broadband radiation sources. Chalcogenide films can be prepared by physical methods as well as by solution-based techniques in which solutions of chalcogenides in amines are used. This paper presents results on the solution-based fabrication and optical characterization of single arsenic sulfide layers and multilayer stacks containing As2S3 layers together with porous silica layers coated on planar and fiber-optic substrates. Input As2S3 solutions for the layer fabrications were prepared by dissolving As2S3 powder in n-propylamine in a concentration of 0.50 mol/l. These solutions were applied on glass slides by dip-coating method and obtained layers were thermally treated in vacuum at temperatures up to 180 °C. Similar procedure was used for As2S3 layers in multilayer stacks. Such stacks were fabricated by repeating the application of one porous silica layer prepared by the sol-gel method and one As2S3 layer onto glass slides or silica fibers (a diameter of 0.3 mm) by using the dip-coating method. It has been found that the curing process of the applied layers has to be carefully controlled in order to obtain stacks with three pairs of such layers. Single arsenic and porous silica layers were characterized by optical microscopy, and by measuring their transmission spectra in a range of 200-2500 nm. Thicknesses and refractive indices were estimated from the spectra. Transmission spectra of planar multilayer stacks were measured, too. Interference bands have been determined from optical measurements on the multilayer stacks with a minimum transmittance of about 50% which indicates the possibility of using such stacks as reflecting mirrors.

  3. Optical resonant tunneling in photonic heterostructures containing a tunable dielectric layer

    Science.gov (United States)

    Cui, Liyong; Lu, Guang; Zhang, Shan; Liu, Fen; Xin, Yanqing; Wang, Kunlun; Yang, Tianlin; Wang, Li; Du, Guiqiang

    2017-10-01

    We demonstrate theoretically and experimentally that complete light transmission can be realized using a photonic heterostructure containing a tunable dielectric layer inserted between two different truncated photonic crystals (PCs). A perfect tunneling state is produced within enlarged photonic band gap (PBG) of the heterostructure by varying the thickness of inserted dielectric layer and the transmittance of the tunneling state depends on the dielectric layer thickness. Additionally, the tunneling state frequency varies with inserted layer thickness but is always located within the small overlapped PBG of two PCs. Therefore, both a perfect tunneling state and an ultrawide PBG can be realized in these heterostructures. The experimental results showed good agreement with theoretical values.

  4. Electrochemistry at the edge of a single graphene layer in a nanopore

    DEFF Research Database (Denmark)

    Banerjee, Sutanuka; Shim, Jeong; Rivera, J.

    2013-01-01

    We study the electrochemistry of single layer graphene edges using a nanopore-based structure consisting of stacked graphene and AlO dielectric layers. Nanopores, with diameters ranging from 5 to 20 nm, are formed by an electron beam sculpting process on the stacked layers. This leads to a unique...

  5. Research on the honeycomb restrain layer application to the high power microwave dielectric window

    Science.gov (United States)

    Zhang, Qingyuan; Shao, Hao; Huang, Wenhua; Guo, Letian

    2018-01-01

    Dielectric window breakdown is an important problem of high power microwave radiation. A honeycomb layer can suppress the multipactor in two directions to restrain dielectric window breakdown. This paper studies the effect of the honeycomb restrain layer on improving the dielectric window power capability. It also studies the multipactor suppression mechanism by using the electromagnetic particle-in-cell software, gives the design method, and accomplishes the test experiment. The experimental results indicated that the honeycomb restrain layer can effectively improve the power capability twice.

  6. Simulation of dual-gate SOI MOSFET with different dielectric layers

    Science.gov (United States)

    Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

    2016-04-01

    The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

  7. High-T{sub c} superconducting rectangular microstrip patch covered with a dielectric layer

    Energy Technology Data Exchange (ETDEWEB)

    Bedra, Sami, E-mail: s_bedra@yahoo.fr [Department of Industrial Engineering, University of Khenchela, 40004 Khenchela (Algeria); Fortaki, Tarek [Electronics Department, University of Batna, 05000 Batna (Algeria)

    2016-05-15

    Highlights: • We model a microstrip antenna with a dielectric cover and superconductor patch. • The extended full-wave analysis is used to solve for the antenna characteristics • The accuracy of the method is checked by comparing our results with published data • The superconducting patch affects the resonant characteristics of the antenna • Patch on substrate–superstrate configuration is more advantageous than the one on single layer. - Abstract: This paper presents a full-wave method to calculate the resonant characteristics of rectangular microstrip antenna with and without dielectric cover, to explain the difference of performance with temperature between superconducting and normal conducting antenna. Especially the characteristics of high temperature superconducting (HTS) antenna were almost ideal around the critical temperature (T{sub c}). The dyadic Green's functions of the considered structure are efficiently determined in the vector Fourier transform domain. The effect of the superconductivity of the patch is taken into account using the concept of the complex resistive boundary condition. The computed results are found to be in good agreement with results obtained using other methods. Also, the effects of the superstrate on the resonant frequency and bandwidth of rectangular microstrip patch in a substrate–superstrate configuration are investigated. This type of configuration can be used for wider bandwidth by proper selection of superstrate thickness and its dielectric constants.

  8. Restoration of s-polarized evanescent waves and subwavelength imaging by a single dielectric slab

    International Nuclear Information System (INIS)

    El Gawhary, Omar; Schilder, Nick J; Costa Assafrao, Alberto da; Pereira, Silvania F; Paul Urbach, H

    2012-01-01

    It was predicted a few years ago that a medium with negative index of refraction would allow for perfect imaging. Although no material has been found so far that behaves as a perfect lens, some experiments confirmed the theoretical predictions in the near-field, or quasi-static, regime where the behaviour of a negative index medium can be mimicked by a thin layer of noble metal, such as silver. These results are normally attributed to the excitation of surface plasmons in the metal, which only leads to the restoration of p-polarized evanescent waves. In this work, we show that the restoration of s-polarized evanescent waves and, correspondingly, sub-wavelength imaging by a single dielectric slab are possible. Specifically, we show that at λ = 632 nm a thin layer of GaAs behaves as a superlens for s-polarized waves. Replacing the single-metal slab by a dielectric is not only convenient from a technical point of view, it being much easier to deposit and control the thickness and flatness of dielectric films than metal ones, but also invites us to re-think the connection between surface plasmon excitation and the theory of negative refraction. (paper)

  9. Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers.

    Science.gov (United States)

    Wang, Lin; Chen, Xiaolong; Wang, Yang; Wu, Zefei; Li, Wei; Han, Yu; Zhang, Mingwei; He, Yuheng; Zhu, Chao; Fung, Kwok Kwong; Wang, Ning

    2013-02-07

    We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y(2)O(3) as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to be dominant in Y(2)O(3)-covered SLG and a very few short-range impurities have been introduced by Y(2)O(3). Both DC transport and AC capacitance measurements carried out at cryogenic temperatures demonstrate that the broadening of Landau levels is mainly due to the additional charged impurities and inhomogeneity of carriers induced by Y(2)O(3) layers.

  10. Effects of N2O plasma treatment on perhydropolysilazane spin-on-dielectrics for inter-layer-dielectric applications

    International Nuclear Information System (INIS)

    Park, Kyoung-Seok; Ko, Pil-Seok; Kim, Sam-Dong

    2014-01-01

    Effects of the N 2 O plasma treatment (PT) on perhydropolysilazane spin-on-dielectric (PHPS SOD) were examined as potential inter-layer-dielectrics (ILDs) for sub-30 nm Si circuits. The spin-coated PHPS (18.5 wt.%) ILD layers converted at 650 °C were integrated with the 0.18 μm Si front-end-of-the line process. A modified contact pre-cleaning scheme using N 2 O PT produced more uniform and stable contact chain resistances from the SOD ILDs than the case of pre-cleaning only by buffered oxide etcher. Our analysis shows that this enhancement is due to the minimized carbon contamination on the PHPS side-wall surface densified by PT. - Highlights: • Perhydropolysilazane (PHPS) layer is evaluated as a Si interlayer dielectric. • Examine effects of the N 2 O plasma treatment (PT) on PHPS spin-on-dielectrics (SODs) • Significantly improved metal contact resistances are achieved using the N 2 O PT. • Contact resistance enhancement by PT is due to the minimized carbon contamination

  11. High Gain and High Directive of Antenna Arrays Utilizing Dielectric Layer on Bismuth Titanate Ceramics

    Directory of Open Access Journals (Sweden)

    F. H. Wee

    2012-01-01

    Full Text Available A high gain and high directive microstrip patch array antenna formed from dielectric layer stacked on bismuth titanate (BiT ceramics have been investigated, fabricated, and measured. The antennas are designed and constructed with a combination of two-, four-, and six-BiT elements in an array form application on microwave substrate. For gain and directivity enhancement, a layer of dielectric was stacked on the BiT antenna array. We measured the gain and directivity of BiT array antennas with and without the dielectric layer and found that the gain of BiT array antenna with the dielectric layer was enhanced by about 1.4 dBi of directivity and 1.3 dB of gain over the one without the dielectric layer at 2.3 GHz. The impedance bandwidth of the BiT array antenna both with and without the dielectric layer is about 500 MHz and 350 MHz, respectively, which is suitable for the application of the WiMAX 2.3 GHz system. The utilization of BiT ceramics that covers about 90% of antenna led to high radiation efficiency, and small-size antennas were produced. In order to validate the proposed design, theoretical and measured results are provided and discussed.

  12. Experience with single-layer rectal anastomosis.

    OpenAIRE

    Khubchandani, M; Upson, J

    1981-01-01

    Anastomotic dehiscence following resection of the large intestine is a serious complication. Satisfactory results of single-layer anastomosis depend upon meticulous technique and a scrupulously clean colon. Out of 65 single-layer anastomoses involving the rectum, significant leakage occurred in 4 patients. The results are reported in order to draw attention to the safety and efficacy of one-layer anastomosis.

  13. Tailoring the Dielectric Layer Structure for Enhanced Performance of Organic Field-Effect Transistors: The Use of a Sandwiched Polar Dielectric Layer.

    Science.gov (United States)

    Han, Shijiao; Yang, Xin; Zhuang, Xinming; Yu, Junsheng; Li, Lu

    2016-07-07

    To investigate the origins of hydroxyl groups in a polymeric dielectric and its applications in organic field-effect transistors (OFETs), a polar polymer layer was inserted between two polymethyl methacrylate (PMMA) dielectric layers, and its effect on the performance as an organic field-effect transistor (OFET) was studied. The OFETs with a sandwiched dielectric layer of poly(vinyl alcohol) (PVA) or poly(4-vinylphenol) (PVP) containing hydroxyl groups had shown enhanced characteristics compared to those with only PMMA layers. The field-effect mobility had been raised more than 10 times in n -type devices (three times in the p -type one), and the threshold voltage had been lowered almost eight times in p -type devices (two times in the n -type). The on-off ratio of two kinds of devices had been enhanced by almost two orders of magnitude. This was attributed to the orientation of hydroxyl groups from disordered to perpendicular to the substrate under gate-applied voltage bias, and additional charges would be induced by this polarization at the interface between the semiconductor and dielectrics, contributing to the accumulation of charge transfer.

  14. Tailoring the Dielectric Layer Structure for Enhanced Performance of Organic Field-Effect Transistors: The Use of a Sandwiched Polar Dielectric Layer

    Directory of Open Access Journals (Sweden)

    Shijiao Han

    2016-07-01

    Full Text Available To investigate the origins of hydroxyl groups in a polymeric dielectric and its applications in organic field-effect transistors (OFETs, a polar polymer layer was inserted between two polymethyl methacrylate (PMMA dielectric layers, and its effect on the performance as an organic field-effect transistor (OFET was studied. The OFETs with a sandwiched dielectric layer of poly(vinyl alcohol (PVA or poly(4-vinylphenol (PVP containing hydroxyl groups had shown enhanced characteristics compared to those with only PMMA layers. The field-effect mobility had been raised more than 10 times in n-type devices (three times in the p-type one, and the threshold voltage had been lowered almost eight times in p-type devices (two times in the n-type. The on-off ratio of two kinds of devices had been enhanced by almost two orders of magnitude. This was attributed to the orientation of hydroxyl groups from disordered to perpendicular to the substrate under gate-applied voltage bias, and additional charges would be induced by this polarization at the interface between the semiconductor and dielectrics, contributing to the accumulation of charge transfer.

  15. Millimeter-Wave Dielectric Properties of Single Crystal Ferroelectric and Dielectric Materials

    Energy Technology Data Exchange (ETDEWEB)

    McCloy, John S.; Korolev, Konstantin A.; Li, Zijing; Afsar, Mohammed N.; Sundaram, S. K.

    2011-01-03

    Transmittance measurements on various single crystal ferroelectric materials over a broad millimeter-wave frequency range have been performed. Frequency dependence of the complex dielectric permittivity has been determined in the millimeter wave region for the first time. The measurements have been employed using a free-space quasi-optical millimeter-wave spectrometer equipped with a set of high power backward wave oscillators (BWOs) as sources of coherent radiation, tunable in the range from 30 - 120 GHz. The uncertainties and possible sources of instrumentation and measurement errors related to the free-space millimeter-wave technique are discussed. This work has demonstrated that precise MMW permittivities can be obtained even on small thin crystals using the BWO quasi-optical approach.

  16. Origin of colossal dielectric permittivity of rutile Ti₀.₉In₀.₀₅Nb₀.₀₅O₂: single crystal and polycrystalline.

    Science.gov (United States)

    Song, Yongli; Wang, Xianjie; Sui, Yu; Liu, Ziyi; Zhang, Yu; Zhan, Hongsheng; Song, Bingqian; Liu, Zhiguo; Lv, Zhe; Tao, Lei; Tang, Jinke

    2016-02-12

    In this paper, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10(4), dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In + Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.

  17. Optical resonant tunneling in photonic heterostructures containing a tunable dielectric layer

    Directory of Open Access Journals (Sweden)

    Liyong Cui

    2017-10-01

    Full Text Available We demonstrate theoretically and experimentally that complete light transmission can be realized using a photonic heterostructure containing a tunable dielectric layer inserted between two different truncated photonic crystals (PCs. A perfect tunneling state is produced within enlarged photonic band gap (PBG of the heterostructure by varying the thickness of inserted dielectric layer and the transmittance of the tunneling state depends on the dielectric layer thickness. Additionally, the tunneling state frequency varies with inserted layer thickness but is always located within the small overlapped PBG of two PCs. Therefore, both a perfect tunneling state and an ultrawide PBG can be realized in these heterostructures. The experimental results showed good agreement with theoretical values.

  18. Broadband infrared reflective surfaces using doped and stacked polar dielectric layers

    Science.gov (United States)

    Janipour, Mohsen; Sendur, Kursat

    2018-02-01

    Polar dielectrics, such as SiC, are excellent candidates for operation in extreme environments due to their excellent mechanical and thermal properties. In addition, they can achieve good IR reflection in the Reststrahlen band. However, these materials have relatively narrow spectral bandwidth for reflection, especially considering that the broadband illumination sources in extreme environments. In this study, we investigated the broadband reflection properties of polar dielectrics by engineering the Reststrahlen band through doping and stacked layers. Our results indicate that by doping polar dielectrics, spectral reflection bandwidth can be significantly broadened. In addition, we demonstrate that by stacking different polar dielectric layers, the reflection spectrum of different materials can be overlapped, and thereby, significantly broader spectrum is obtained.

  19. Gallium nitride-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing

    Science.gov (United States)

    Bae, Choelhwyi

    In previous studies, device quality Si-SiO2 interfaces and dielectric bulk films (SiO2) were prepared using a two-step process; (i) remote plasma-assisted oxidation (RPAO) to form a superficially interfacial oxide (˜0.6 nm) and (ii) remote plasma enhanced chemical vapor deposition (RPECVD) to deposit the oxide film. The same approach has been applied to the GaN-SiO2 system. After a 300°C remote N2/He plasma treatment of the GaN surface, residual C and Cl were reduced below Auger electron spectroscopy (AES) detection, and the AES peak ratio of O KLL and N KLL was ˜0.06 or ˜0.1 monolayer of oxygen. RPAO of GaN surfaces using O2, N2O, and N 2O in N2 source gases were investigated by on-line AES to determine the oxidation kinetics and chemical composition of the interfacial oxide. Without an RPAO step, subcutaneous oxidation of GaN takes place during RPECVD deposition of SiO2, and on-line AES indicates a ˜0.7 nm subcutaneous oxide. Compared to single step SiO2 deposition, significantly reduced interface state density (Dit) was obtained at the GaN-SiO2 interface by independent control of GaN-Ga2O3 interface formation by thin RPAO oxide (˜1 nm) and SiO2 film deposition by RPECVD. High-low frequency method and conductance method indicate that Dit of GaN Metal-Oxide-Semiconductor (MOS) sample without RPAO is ˜5 times larger than that of the sample with RPAO. For the GaN MOS structures with remote plasma-assisted oxidation and nitridation, determined values of D it were in the range of low-to-mid x 1011 cm-2eV-1. Also, we report on high temperature and photo-assisted capacitance-voltage (C-V) characteristics.

  20. Pulsed electromagnetic field radiation from a narrow slot antenna with a dielectric layer

    OpenAIRE

    Stumpf, M.; de Hoop, A. T.; Lager, I. E.

    2010-01-01

    Analytic time domain expressions are derived for the pulsed electromagnetic field radiated by a narrow slot antenna with a dielectric layer in a two?dimensional model configuration. In any finite time window of observation, exact pulse shapes for the propagated, reflected, and refracted wave constituents are constructed with the aid of the modified Cagniard method (Cagniard?DeHoop method). Numerical results are presented for vanishing slot width and field pulse shapes at the dielectric/free s...

  1. Thickness-Dependent Dielectric Constant of Few-Layer In 2 Se 3 Nanoflakes

    KAUST Repository

    Wu, Di

    2015-11-17

    © 2015 American Chemical Society. The dielectric constant or relative permittivity (εr) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured εr increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.

  2. Directional Emission from Metal-Dielectric-Metal Structures: Effect of Mixed Metal Layers, Dye Location and Dielectric Thickness.

    Science.gov (United States)

    Choudhury, Sharmistha Dutta; Badugu, Ramachandram; Ray, Krishanu; Lakowicz, Joseph R

    2015-02-12

    Metal-dielectric-metal (MDM) structures provide directional emission close to the surface normal, which offers opportunities for new design formats in fluorescence based applications. The directional emission arises due to near-field coupling of fluorophores with the optical modes present in the MDM substrate. Reflectivity simulations and dispersion diagrams provide a basic understanding of the mode profiles and the factors that affect the coupling efficiency and the spatial distribution of the coupled emission. This work reveals that the composition of the metal layers, the location of the dye in the MDM substrate and the dielectric thickness are important parameters that can be chosen to tune the color of the emission wavelength, the angle of observation, the angular divergence of the emission and the polarization of the emitted light. These features are valuable for displays and optical signage.

  3. Automatic settlement analysis of single-layer armour layers

    NARCIS (Netherlands)

    Hofland, B.; van gent, Marcel

    2016-01-01

    A method to quantify, analyse, and present the settlement of single-layer concrete armour layers of coastal structures is presented. The use of the image processing technique for settlement analysis is discussed based on various modelling
    studies performed over the years. The accuracy of the

  4. Stop Band Gap in Periodic Layers of Confined Atomic Vapor/Dielectric Medium

    International Nuclear Information System (INIS)

    Li Yuan-Yuan; Li Li; Lu Yi-Xin; Zhang Yan-Peng; Xu Ke-Wei

    2013-01-01

    A stop band gap is predicted in periodic layers of a confined atomic vapor/dielectric medium. Reflection and transmission profile of the layers over the band gap can be dramatically modified by the confined atoms and the number of layer periods. These gap and line features can be ascribed to the enhanced contribution of slow atoms induced by atom-wall collision, transient behavior of atom-light interaction and Fabry—Pérot effects in a thermal confined atomic system

  5. Raman fingerprinting of single dielectric nanoparticles in plasmonic nanopores

    Science.gov (United States)

    Kerman, Sarp; Chen, Chang; Li, Yi; van Roy, Wim; Lagae, Liesbet; van Dorpe, Pol

    2015-11-01

    Plasmonic nano-apertures are commonly used for the detection of small particles such as nanoparticles and proteins by exploiting electrical and optical techniques. Plasmonic nanopores are metallic nano-apertures sitting on a thin membrane with a tiny hole. It has been shown that plasmonic nanopores with a given geometry identify internal molecules using Surface Enhanced Raman Spectroscopy (SERS). However, label-free identification of a single dielectric nanoparticle requires a highly localized field comparable to the size of the particle. Additionally, the particle's Brownian motion can jeopardize the amount of photons collected from a single particle. Here, we demonstrate that the combination of optical trapping and SERS can be used for the detection and identification of 20 nm polystyrene nanoparticles in plasmonic nanopores. This work is anticipated to contribute to the detection of small bioparticles, optical trapping and nanotribology studies.Plasmonic nano-apertures are commonly used for the detection of small particles such as nanoparticles and proteins by exploiting electrical and optical techniques. Plasmonic nanopores are metallic nano-apertures sitting on a thin membrane with a tiny hole. It has been shown that plasmonic nanopores with a given geometry identify internal molecules using Surface Enhanced Raman Spectroscopy (SERS). However, label-free identification of a single dielectric nanoparticle requires a highly localized field comparable to the size of the particle. Additionally, the particle's Brownian motion can jeopardize the amount of photons collected from a single particle. Here, we demonstrate that the combination of optical trapping and SERS can be used for the detection and identification of 20 nm polystyrene nanoparticles in plasmonic nanopores. This work is anticipated to contribute to the detection of small bioparticles, optical trapping and nanotribology studies. Electronic supplementary information (ESI) available: Fig. S1: The

  6. Perhydropolysilazane spin-on dielectrics for inter-layer-dielectric applications of sub-30 nm silicon technology

    International Nuclear Information System (INIS)

    Kim, Sam-Dong; Ko, Pil-Seok; Park, Kyoung-Seok

    2013-01-01

    Various material properties of the perhydropolysilazane spin-on dielectric (PHPS SOD) were examined and analyzed in this study as potential inter-layer dielectrics (ILDs) integrated for Si circuits of 30 nm technology or beyond. The spin-coated PHPS (18.5 wt%) layers converted at 650 °C showed comparable but less perfect thermal conversion to silica than the films converted at 1000 °C, however exhibiting excellent gap filling (15 nm gap opening, aspect ratio (AR) of ∼23) and planarization (degree of planarization (DOP) = ∼73% for 800 nm initial step height, cusp angle = ∼16°) sufficient for the Si integration. PHPS SOD layers cured at 650 °C were integrated ILDs in the 0.18 µm Si front-end-of-the-line process, and the estimated hot-carrier reliability of n-channel metal oxide semiconductor transistors (ten years at a drain voltage of 1.68 V) had no significant difference from that of the transistors integrated with the conventional borophosposilicate glass ILDs. A modified contact pre-cleaning scheme using N 2 O plasma treatment also produced uniform and stable contact chain resistances from the SOD ILDs. (paper)

  7. Laser Direct Patterning of Organic Dielectric Passivation Layer for Fabricating Amorphous Silicon Thin-Film Transistors

    Science.gov (United States)

    Chen, Chao-Nan; Su, Kuo-Hui; Chen, Yeong-Chin

    2011-06-01

    In this study, a laser direct patterning process application in benzocyclobutene (BCB) organic dielectric passivation-based amorphous silicon (a-Si) thin film transistor (TFT) device fabrication has been carried out using a KrF excimer laser. A BCB organic photoresist material of 2000 nm with a dielectric constant = 2.7 served as the dielectric passivation layer in our device. Compared with conventional processes, laser direct patterning combining BCB organic photoresist dielectric passivation could eliminate at least four process steps. The etching depth of the BCB organic material passivation layer depends on the laser energy density and number of irradiation shots. The hydrogenated a-Si TFT devices are fabricated by replacing the passivation layer and contact hole patterning process. The mobility and threshold voltage reached 0.16 cm2 V-1 s-1 and -3.5 V, respectively. For TFT device performance, laser direct patterning technology is a potential method of replacing photolithography technology in the application of BCB organic dielectric passivation-based TFT manufacture.

  8. Single-layer graphene on silicon nitride micromembrane resonators

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  9. Maximal light-energy transfer through a dielectric/metal-layered electrode on a photoactive device.

    Science.gov (United States)

    Kim, Kyoung-Ho; Park, Q-Han

    2014-01-27

    We report the fabrication of an optimized low reflective dielectric/metal-layered electrode that provides significant electrical conductivity and light transparency in the near-infrared wavelength regime. By making the metal film thickness thick enough and choosing a proper dielectric layer with a certain thickness, we show that our suggested electrode significantly reduces the light reflection while preserving high electrical conductivity. We demonstrate our optimized electrodes present a highly conductive surface with a sheet resistance of 5.2 Ω/sq and a high light transmittance of near 85% in the near-infrared regime. We also apply our optimized electrode to thin-film organic photovoltaic devices and show the electrode helps in absorbing light energy inside an active layer. We believe that this simple but powerful layered electrode will pave the way for designing transparent electrodes on photoactive devices.

  10. Pulsed electromagnetic field radiation from a narrow slot antenna with a dielectric layer

    NARCIS (Netherlands)

    Štumpf, M.; De Hoop, A.T.; Lager, I.E.

    2010-01-01

    Analytic time domain expressions are derived for the pulsed electromagnetic field radiated by a narrow slot antenna with a dielectric layer in a two?dimensional model configuration. In any finite time window of observation, exact pulse shapes for the propagated, reflected, and refracted wave

  11. Zn(3)(4-OOCC(6)H(4)PO(3))(2): A polar metal phosphonate with pillared layered structure showing SHG-activity and large dielectric anisotropy.

    Science.gov (United States)

    Li, Jin-Tang; Cao, Deng-Ke; Akutagawa, Tomoyuki; Zheng, Li-Min

    2010-10-07

    A new metal phosphonate Zn(3)(4-OOCC(6)H(4)PO(3))(2) (1) is reported which crystallizes in orthorhombic space group Pca2(1). It shows a pillared layered structure in which the {ZnO(4)}, {ZnO(5)} and {PO(3)C} polyhedra are connected through corner- or edge-sharing to form an inorganic layer in the ab plane which contains 4- and 5-member rings. These layers are pillared by the uni-oriented 4-carboxylatephenylphosphonate ligands, thus leading to a polar 3D architecture. The dielectric anisotropy measurements of a single crystal of 1 reveal that dielectric constant along the inter-layer is larger than that along the intra-layer with a ratio of about 2.3. Second harmonic generation (SHG) activity is observed.

  12. Determination of the particle energy in a waveguide with a thin dielectric layer

    OpenAIRE

    Andrey V. Tyukhtin

    2012-01-01

    An original method to determine the charged particle energy is developed. This method uses the dependency of waveguide mode frequency on the Lorentz factor of particles. It is central to this technique that the particle bunch generates Cherenkov radiation in a waveguide, and the mode frequencies depend essentially on the Lorentz factor. Here, we consider the case when radiation is excited in a circular waveguide with a dielectric layer. It is shown that structures with relatively thick layers...

  13. Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone.

    Science.gov (United States)

    Jandhyala, Srikar; Mordi, Greg; Lee, Bongki; Lee, Geunsik; Floresca, Carlo; Cha, Pil-Ryung; Ahn, Jinho; Wallace, Robert M; Chabal, Yves J; Kim, Moon J; Colombo, Luigi; Cho, Kyeongjae; Kim, Jiyoung

    2012-03-27

    Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic layer deposition through ozone functionalization to deposit high-κ dielectrics (such as Al(2)O(3)) without breaking vacuum. The underlying mechanisms of functionalization have been studied theoretically using ab initio calculations and experimentally using in situ monitoring of transport properties. It is found that ozone molecules are physisorbed on the surface of graphene, which act as nucleation sites for dielectric deposition. The physisorbed ozone molecules eventually react with the metal precursor, trimethylaluminum to form Al(2)O(3). Additionally, we successfully demonstrate the performance of dual-gated GFETs with Al(2)O(3) of sub-5 nm physical thickness as a gate dielectric. Back-gated GFETs with mobilities of ~19,000 cm(2)/(V·s) are also achieved after Al(2)O(3) deposition. These results indicate that ozone functionalization is a promising pathway to achieve scaled gate dielectrics on graphene without leaving a residual nucleation layer. © 2012 American Chemical Society

  14. Adjustable threshold-voltage in all-inkjet-printed organic thin film transistor using double-layer dielectric structures

    International Nuclear Information System (INIS)

    Wu, Wen-Jong; Lee, Chang-Hung; Hsu, Chun-Hao; Yang, Shih-Hsien; Lin, Chih-Ting

    2013-01-01

    An all-inkjet-printed organic thin film transistor (OTFT) with a double-layer dielectric structure is proposed and implemented in this study. By using the double-layer structure with different dielectric materials (i.e., polyvinylphenol with poly(vinylidene fluoride-co-hexafluoropropylene)), the threshold-voltage of OTFT can be adjusted. The threshold-voltage shift can be controlled by changing the composition of dielectric layers. That is, an enhancement-mode OTFT can be converted to a depletion-mode OTFT by selectively printing additional dielectric layers to form a high-k/low-k double-layer structure. The printed OTFT has a carrier mobility of 5.0 × 10 −3 cm 2 /V-s. The threshold-voltages of the OTFTs ranged between − 13 V and 10 V. This study demonstrates an additional design parameter for organic electronics manufactured using inkjet printing technology. - Highlights: • A double-layer dielectric organic thin film transistor, OTFT, is implemented. • The threshold voltage of OTFT can be configured by the double dielectric structure. • The composition of the dielectric determines the threshold voltage shift. • The characteristics of OTFTs can be adjusted by double dielectric structures

  15. Investigation of single-mode vertical-cavity surface-emitting lasers with graphene-bubble dielectric DBR

    Science.gov (United States)

    Guan, Baolu; Li, Pengtao; Arafin, Shamsul; Alaskar, Yazeed; Wang, Kang L.

    2018-02-01

    An inter-cavty contact single mode 850 nm VCSEL was fabricated with a graphene assisted self-assembly curved dielectric bubble Bragg mirror for the first time. Taking the advantage of graphene's uniform low surface energy, the low cost dielectric bubble DBR (Si3N4/SiO2) was deposited on top of the graphene/half-VCSEL structure via van der Waals Force (vdWF) without using any additional spacing elements and sacrificial layer release-etch process. The continuous-wave operating VCSELs with an aperture diameter of 7 μm exhibit single-mode output power of more than 1 mW with a slope efficiency of 0.2 W/A. The sidemode suppression ratios are >40 dB. This novel modification into the lasers can also be applied to a variety of other optoelectronic devices, such as resonance photodetecter and super narrow linewidth VCSEL.

  16. Nano-soldering to single atomic layer

    Science.gov (United States)

    Girit, Caglar O [Berkeley, CA; Zettl, Alexander K [Kensington, CA

    2011-10-11

    A simple technique to solder submicron sized, ohmic contacts to nanostructures has been disclosed. The technique has several advantages over standard electron beam lithography methods, which are complex, costly, and can contaminate samples. To demonstrate the soldering technique graphene, a single atomic layer of carbon, has been contacted, and low- and high-field electronic transport properties have been measured.

  17. DNA-nucleobases: Gate Dielectric/Passivation Layer for Flexible GFET-based Sensor Applications (Postprint)

    Science.gov (United States)

    2015-09-24

    deposition of the gate dielectric layer used for making transistor devices. The approach was introducing a thin film of deoxyribonucleic acid (DNA...were investigated as well. This is an important first step to realizing high performance graphene-based transistors that have potential use in bio ...deposition; Sensors; Thin films ; 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT: SAR 18. NUMBER OF PAGES 9 19a. NAME OF

  18. Single-layer MoS2 transistors.

    Science.gov (United States)

    Radisavljevic, B; Radenovic, A; Brivio, J; Giacometti, V; Kis, A

    2011-03-01

    Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

  19. Solid solution trends that impact electrical design of submicron layers in dielectric capacitors

    Science.gov (United States)

    Levi, Roni D.

    It is predictable that future thin layer multilayer dielectrics and thin films embedded capacitors will require higher field and higher reliability performance. This thesis explores the fundamental factors that would limit the high field and reliability performance in thin layer dielectrics based on BaTiO3. Those factors have different origins: On one side, the nature of the metal-dielectric interface was shown to affect the high field dielectric properties of capacitive structures. In addition to that, the intrinsic bulk properties of BaTiO3 based solid solutions affect the high field properties of thin dielectric layers depending on composition and annealing conditions. Both effects were investigated in this study. The temperature dependence of the electrical leakage current density of chemical solution deposited BaTiO3 films on high purity Ni foils was investigated as function of the underlying Ni microstructure. The electrical properties were then characterized on capacitors with and without the presence of Ni grain boundaries. When a Ni grain boundary from the substrate was present in the capacitor used during the electrical measurements, the loss tangent of the capacitor rose rapidly for dc biases exceeding ˜25kV/cm. The critical bias increases to ˜100kV/cm when no substrate grain boundaries are included in the capacitor. In addition, the capacitance-voltage curves are much more symmetric when grain boundaries are absent. This disparity in the electrical behavior was analyzed in terms of the mechanisms of charge conduction across the Ni-dielectric interface. While a reverse biased Schottky emission mechanism dominates the current in areas free of Ni grain boundaries, the Schottky barrier at the cathode is less effective when Ni grain boundaries are present due to local enhancement of the electric field. This, leads to a larger leakage current dominated by the forward biased Schottky barrier at the anode. In addition to the interface influence, the

  20. A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer

    International Nuclear Information System (INIS)

    Xiao-Rong, Luo; Yuan-Gang, Wang; Hao, Deng; Udrea, Florin

    2010-01-01

    A novel partial silicon-on-insulator (PSOI) high voltage device with a low-k (relative permittivity) dielectric buried layer (LK PSOI) and its breakdown mechanism are presented and investigated by MEDICI. At a low k value the electric field strength in the dielectric buried layer (E I ) is enhanced and a Si window makes the substrate share the vertical drop, resulting in a high vertical breakdown voltage; in the lateral direction, a high electric field peak is introduced at the Si window, which modulates the electric field distribution in the SOI layer; consequently, a high breakdown voltage (BV) is obtained. The values of E I and BV of LK PSOI with k I = 2 on a 2 μm thick SOI layer over 1 μm thick buried layer are enhanced by 74% and 19%, respectively, compared with those of the conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Terahertz transmission enhancement in finite-size arrays of subwavelength holes modified with dielectric peg layer

    Science.gov (United States)

    Whisenhunt, Brady Andrew

    Scope and Method of Study: This thesis investigates terahertz transmission through finite-size arrays of subwavelength holes perforated in a thin aluminum film modified with a periodic layer of dielectric pegs resting on the hole openings. Samples of differing patterns and numbers of holes were fabricated in a 350 nm thick layer of aluminum on top of a 640 µm thick silicon substrate layer. The dielectric peg layer (DPL) consisted of periodically-spaced pegs made out of negative photoresist material. Terahertz time-domain spectroscopy measurements of the transmission was taken both before and after fabrication of the DPL on top of the hole array samples. The results were analyzed and compared to simulation of an infinitely periodic hole array modified with a DPL. Findings and Conclusions: A peak in the transmission spectrum was observed at the predicted surface plasmon resonance frequency for the array. The transmission peak was enhanced 5%-20% with addition of the DPL, depending on the arrangement and number of holes in the sample. A weaker peak was observed in some samples at higher frequencies with addition of the DPL, which is attributed to a resonance of the DPL layer itself. Both resonant and nonresonant transmission was enhanced with addition of the DPL. Simulation showed a similar enhancement of the resonant and nonresonant transmission due to DPL. Varying the value of the dielectric constant of the simulated pegs changed the strength of the fundamental surface plasmon resonance as well as the location of the higher frequency peaks. A distinct Fano-like asymmetry was observed in the experimentally measured transmission spectra but not observed in simulation. The results suggest that a heterostructure consisting of a finite-size array of subwavelength holes combined with a DPL can be used to enhance the transmission of light through the holes as well as tune the asymmetry of the main surface plasmon resonance peak.

  2. THz - ToF Optical Layer Analysis (OLA) to determine optical properties of dielectric materials

    Science.gov (United States)

    Spranger, Holger; Beckmann, Jörg

    2017-02-01

    Electromagnetic waves with frequencies between 0.1 and 10 THz are described as THz-radiation (T-ray). The ability to penetrate dielectric materials makes T-rays attractive to reveal discontinuities in polymer and ceramic materials. THz-Time Domain Spectroscopy Systems (THz-TDS) are available on the market today which operates with THz-pulses transmitted and received by optically pumped semiconductor antennas. In THz-TDS the travelling time (ToF) and shape of the pulse is changed if it interacts with the dielectric material and its inherent discontinuities. A tomogram of the object under the test can be reconstructed from time of flight diffraction (ToFD) scans if a synthetic focusing aperture (SAFT) algorithm is applied. The knowledge of the base materials shape and optical properties is essential for a proper reconstruction result. To obtain these properties a model is assumed which describes the device under the test as multilayer structure composed of thin layers with different dielectric characteristics. The Optical Layer Analysis (OLA) is able to fulfill these requirements. A short description why the optical properties are crucial for meaningful SAFT reconstruction results will be given first. Afterwards the OLA will be derived and applied on representative samples to discuss and evaluate its benefits and limits.

  3. Electrically Anisotropic Layered Perovskite Single Crystal

    KAUST Repository

    Li, Ting-You

    2016-04-01

    Organic-inorganic hybrid perovskites (OIHPs), which are promising materials for electronic and optoelectronic applications (1-10), have made into layered organic-inorganic hybrid perovskites (LOIHPs). These LOIHPs have been applied to thin-film transistors, solar cells and tunable wavelength phosphors (11-18). It is known that devices fabricated with single crystal exhibit the superior performance, which makes the growth of large-sized single crystals critical for future device applications (19-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating the potentials in mass production. After that, we reveal anisotropic electrical and optoelectronic properties which proved the carrier propagating along inorganic framework. The carrier mobility of in-inorganic-plane (in-plane) devices shows the average value of 45 cm2 V–1 s–1 which is about 100 times greater than the record of LOIHP devices (15), showing the importance of single crystal in device application. Moreover, the LOIHP single crystals show its ultra-short carrier lifetime of 42.7 ps and photoluminescence quantum efficiency (PLQE) of 25.4 %. We expect this report to be a start of LOIHPs for advanced applications in which the anisotropic properties are needed (24-25), and meets the demand of high-speed applications and fast-response applications.

  4. Crystal Structure and Dielectric Property of Bismuth Layer-Structured Dielectric Films with c-Axis Preferential Crystal Orientation

    Science.gov (United States)

    Mizutani, Yuki; Kiguchi, Takanori; Konno, Toyohiko J.; Funakubo, Hiroshi; Uchida, Hiroshi

    2010-09-01

    Thin films of bismuth layer-structured dielectrics (BLSDs), CaBi4Ti4O15, and SrBi4Ti4O15, were prepared by a chemical solution deposition (CSD) technique on various substrates, such as (111)Pt/TiO2/(100)Si, (100)LaNiO3/(111)Pt/TiO2/(100)Si, and (100)SrRuO3∥(100)SrTiO3 substrates. Conductive perovskite oxide LaNiO3 with (100) preferential crystal orientation was introduced into the interface between the BLSD film and the (111)Pt/TiO2/(100)Si substrate to control the crystal orientation of BLSD by lattice matching between pseudo-perovskite blocks in the BLSD crystal and the (100)LaNiO3 plane with the perovskite structure. The (00l) planes of BLSD crystals were preferentially oriented on the substrate surface of the (100)LaNiO3/(111)Pt/TiO2/(100)Si, whereas randomly-oriented BLSD crystals with lower crystallinity were only obtained on the surface of (111)Pt/TiO2/(100)Si substrate. The (001)-oriented BLSD films exhibited the leakage current densities below 10-7 A/cm2 at ±50 kV/cm, which is significantly lower than those for randomly-oriented films, above 10-6 A/cm2, The room-temperature dielectric constants (ɛr) of CaBi4Ti4O15 and SrBi4Ti4O15 thin films on the (100)LaNiO3/(111)Pt/TiO2/(100)Si substrate were both approximately 250, while those on the (100)SrRuO3∥(100)SrTiO3 substrate were approximately 220. The temperature dependence of the capacitances for the CaBi4Ti4O15 and SrBi4Ti4O15 films on the (100)LaNiO3/(111)Pt/TiO2/(100)Si substrate were approximately +17 and +10%, respectively, in the temperature range from 25 to 400 °C. These values were slightly larger than those of epitaxial BLSD films, but smaller than those of (Ba,Sr)TiO3 films.

  5. Determination of the particle energy in a waveguide with a thin dielectric layer

    Directory of Open Access Journals (Sweden)

    Andrey V. Tyukhtin

    2012-10-01

    Full Text Available An original method to determine the charged particle energy is developed. This method uses the dependency of waveguide mode frequency on the Lorentz factor of particles. It is central to this technique that the particle bunch generates Cherenkov radiation in a waveguide, and the mode frequencies depend essentially on the Lorentz factor. Here, we consider the case when radiation is excited in a circular waveguide with a dielectric layer. It is shown that structures with relatively thick layers are not convenient for the particle energy measurement because the dependence of the first mode frequency on the Lorentz factor is weak. In contrast, a structure with a thin layer is favorable for such a purpose because this dependency is more essential. Analytical and numerical investigations are performed. It is shown that the first mode amplitude is sufficient for measurements in the case of a pico-Coulomb bunch.

  6. Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment

    Science.gov (United States)

    Shin, Jeong Woo; Kang, Myung Hoon; Oh, Seongkook; Yang, Byung Chan; Seong, Kwonil; Ahn, Hyo-Sok; Lee, Tae Hoon; An, Jihwan

    2018-05-01

    Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.

  7. Theory of Nonlinear Guided Electromagnetic Waves in a Plane Two-Layered Dielectric Waveguide

    Directory of Open Access Journals (Sweden)

    Valeria Yu. Kurseeva

    2017-01-01

    Full Text Available Propagation of transverse electric electromagnetic waves in a homogeneous plane two-layered dielectric waveguide filled with a nonlinear medium is considered. The original wave propagation problem is reduced to a nonlinear eigenvalue problem for an equation with discontinuous coefficients. The eigenvalues are propagation constants (PCs of the guided waves that the waveguide supports. The existence of PCs that do not have linear counterparts and therefore cannot be found with any perturbation method is proven. PCs without linear counterparts correspond to a novel propagation regime that arises due to the nonlinearity. Numerical results are also presented; the comparison between linear and nonlinear cases is made.

  8. Tunneling spin injection into single layer graphene.

    Science.gov (United States)

    Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

    2010-10-15

    We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

  9. Study of surface plasmon resonance of Au nanoparticles coated with dielectric layers

    Science.gov (United States)

    He, Jia-Yu; Huang, Chan-yan; Dai, Ning; Zhu, Da-ming

    2011-08-01

    In this work, atomic layer deposition (ALD) was used to deposit different thickness layers of Al2O3 on Au nanoparticles fabricated by thermal annealing of Au thin films. The effects of the Au-coated Al2O3 layer thickness variation to local surface plasmon resonance (LSPR) in gold (Au) nanoparticles was investigated using transmission surface plasmon resonance (T-SPR) spectroscopy. Thermal annealing of ultrathin films of Au sputtered on transparent substrates can get a dispersed metal particles system which exhibit transmission spectra showing an extinction band attributed to localized surface plasmon resonance (LSPR). The particles prepared by thermal annealing are much more like elliptical rather than sphere. The dielectric medium layer Al2O3 was deposited on these Au particles with the thickness from few nanometers to tens of nanometers by ALD. We found that All the LSPR peak positions of particles on different substrates red shifted as the thickness of deposition layer increase, but the LSPR red-shift effect of particles on alumina substrate was much more remarkable than particles on glass substrate. The results in this paper show that it is a very continent method to manipulate LSPR position which is a profound useful effect in solar cell application by controlling the deposition layer thickness on particles prepared by thermal annealing on suitable substrate.

  10. Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity

    Science.gov (United States)

    Yang, Yu; Koeck, Franz A.; Dutta, Maitreya; Wang, Xingye; Chowdhury, Srabanti; Nemanich, Robert J.

    2017-10-01

    This study investigates how the surface conductivity of H-terminated diamond can be preserved and stabilized by using a dielectric layer with an in situ post-deposition treatment. Thin layers of Al2O3 were grown by plasma enhanced atomic layer deposition (PEALD) on H-terminated undoped diamond (100) surfaces. The changes of the hole accumulation layer were monitored by correlating the binding energy of the diamond C 1s core level with electrical measurements. The initial PEALD of 1 nm Al2O3 resulted in an increase of the C 1s core level binding energy consistent with a reduction of the surface hole accumulation and a reduction of the surface conductivity. A hydrogen plasma step restored the C 1s binding energy to the value of the conductive surface, and the resistance of the diamond surface was found to be within the range for surface transfer doping. Further, the PEALD growth did not appear to degrade the surface conductive layer according to the position of the C 1s core level and electrical measurements. This work provides insight into the approaches to establish and control the two-dimensional hole-accumulation layer of the H-terminated diamond and improve the stability and performance of H-terminated diamond electronic devices.

  11. Effects of surface characteristics of dielectric layers on polymer thin-film transistors obtained by spray methods.

    Science.gov (United States)

    Park, Hye-Yun; Jin, Jun-Su; Yim, Sanggyu; Oh, Seung-Hwan; Kang, Phil-Hyun; Choi, Si-Kyung; Jang, Sung-Yeon

    2013-03-21

    The effect of surface characteristics of dielectric layers on the molecular orientation and device performance of sprayed organic field-effect transistors (OFETs) obtained by a novel solvent-assisted post-treatment, called the solvent-sprayed overlayer (SSO) method, were investigated. The OFETs were fabricated by the spray method using regioregular poly(3-hexylthiophene) (RR-P3HT) as an active material. The SSO treatment was applied on the as-sprayed active layers to arrange the molecular ordering. Bare thin SiO(2) layers and octadecyltrichlorosilane (OTS)-treated SiO(2) (OTS-SiO(2)) were employed as the dielectric materials. The resulting chain orientation, crystallinity, and device performance were correlated as a function of SSO treatment and dielectric layers. The intrinsic limitation of spray methods for polymer film formation was overcome regardless of the type of dielectric layer using the SSO treatment. The orientation direction of RR-P3HT was controlled by SSO treatment to an edge-on dominant orientation that is preferential for charge transport, regardless of the type of dielectric layer. The crystal growth was further enhanced on the OTS-SiO(2) layers because of the reduced nucleation sites. These effects were successfully reflected in the device performance, including an orders-of-magnitude increase in charge mobility. The SSO method is a powerful external treatment method for reorienting the molecular ordering of solidified active films of OFETs to the preferential edge-on packing. The growth of crystals was further optimized by controlling the surface characteristics of the dielectric layers. The purpose of this study was to find the full capabilities of the SSO treatment method that will facilitate the development of high-throughput, large-area organic electronic device manufacturing.

  12. Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ashok, E-mail: ashok.1777@yahoo.com; Ahluwalia, P.K., E-mail: pk_ahluwalia7@yahoo.com

    2014-02-25

    Graphical abstract: We present electronic transport and dielectric response of layered transition metal dichalcogenides nanowires and nanoribbons. Illustration 1: Conductance (G) and corresponding local density of states(LDOS) for LTMDs wires at applied bias. I–V characterstics are shown in lowermost panels. Highlights: • The studied configurations show metallic/semiconducting nature. • States around the Fermi energy are mainly contributed by the d orbitals of metal atoms. • The studied configurations show non-linear current–voltage (I–V) characteristics. • Additional plasmonic features at low energy have been observed for both wires and ribbons. • Dielectric functions for both wires and ribbons are anisotropic (isotropic) at low (high) energy range. -- Abstract: We present first principle study of the electronic transport and dielectric properties of nanowires and nanoribbons of layered transition metal dichalcogenides (LTMDs), MX{sub 2} (M = Mo, W; X = S, Se, Te). The studied configuration shows metallic/semiconducting nature and the states around the Fermi energy are mainly contributed by the d orbitals of metal atoms. Zero-bias transmission show 1G{sub 0} conductance for the ribbons of MoS{sub 2} and WS{sub 2}; 2G{sub 0} conductance for MoS{sub 2}, WS{sub 2}, WSe{sub 2} wires, and ribbons of MoTe{sub 2} and WTe{sub 2}; and 3G{sub 0} conductance for WSe{sub 2} ribbon. The studied configurations show non-linear current–voltage (I–V) characteristics. Negative differential conductance (NDC) has also been observed for the nanoribbons of the selenides and tellurides of both Mo and W. Furthermore, additional plasmonic features below 5 eV energy have been observed for both wires and ribbons as compared to the corresponding monolayers, which is found to be red-shifted on going from nanowires to nanoribbons.

  13. Effect of medium dielectric constant on the physical properties of single-walled carbon nanotubes

    NARCIS (Netherlands)

    Gao, J.; Gomulya, W.; Loi, M. A.

    2013-01-01

    The photophysical properties of semiconducting single walled carbon nanotubes (SWNTs) in different environments are analyzed by steady-state and time-resolved photoluminescence (PL) spectroscopy. The PL emission of SWNTs shows a red shift with the increase of the dielectric constant of the

  14. Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer

    Science.gov (United States)

    Mandal, Saptarshi; Agarwal, Anchal; Ahmadi, Elaheh; Mahadeva Bhat, K.; Laurent, Matthew A.; Keller, Stacia; Chowdhury, Srabanti

    2017-08-01

    In this work, a study of two different types of current aperture vertical electron transistor (CAVET) with ion-implanted blocking layer are presented. The device fabrication and performance limitation of a CAVET with a dielectric gate is discussed, and the breakdown limiting structure is evaluated using on-wafer test structures. The gate dielectric limited the device breakdown to 50V, while the blocking layer was able to withstand over 400V. To improve the device performance, an alternative CAVET structure with a p-GaN gate instead of dielectric is designed and realized. The pGaN gated CAVET structure increased the breakdown voltage to over 400V. Measurement of test structures on the wafer showed the breakdown was limited by the blocking layer instead of the gate p-n junction.

  15. Biocompatible/Degradable Silk Fibroin:Poly(Vinyl Alcohol)-Blended Dielectric Layer Towards High-Performance Organic Field-Effect Transistor

    Science.gov (United States)

    Zhuang, Xinming; Huang, Wei; Yang, Xin; Han, Shijiao; Li, Lu; Yu, Junsheng

    2016-10-01

    Biocompatible silk fibroin (SF):poly(vinyl alcohol) (PVA) blends were prepared as the dielectric layers of organic field-effect transistors (OFETs). Compared with those with pure SF dielectric layer, an optimal threshold voltage of ~0 V, high on/off ratio of ~104, and enhanced field-effect mobility of 0.22 cm2/Vs of OFETs were obtained by carefully controlling the weight ratio of SF:PVA blends to 7:5. Through the morphology characterization of dielectrics and organic semiconductors by utilizing atom force microscopy and electrical characterization of the devices, the performance improvement of OFETs with SF:PVA hybrid gate dielectric layers were attributed to the smooth and homogeneous morphology of blend dielectrics. Furthermore, due to lower charge carrier trap density, the OFETs based on SF:PVA-blended dielectric exhibited a higher bias stability than those based on pure SF dielectric.

  16. Deterministic fabrication of dielectric loaded waveguides coupled to single nitrogen vacancy centers in nanodiamonds

    DEFF Research Database (Denmark)

    Siampour, Hamidreza; Kumar, Shailesh; Bozhevolnyi, Sergey I.

    We report on the fabrication of dielectric-loaded-waveguides which are excited by single-nitrogen-vacancy (NV) centers in nanodiamonds. The waveguides are deterministically written onto the pre-characterized nanodiamonds by using electron beam lithography of hydrogen silsesquioxane (HSQ) resist...... on silver-coated silicon substrate. Change in lifetime for NV-centers is observed after fabrication of waveguides and an antibunching in correlation measurement confirms that nanodiamonds contain single NV-centers....

  17. Self-organization of single filaments and diffusive plasmas during a single pulse in dielectric-barrier discharges

    International Nuclear Information System (INIS)

    Babaeva, Natalia Yu; Kushner, Mark J

    2014-01-01

    Self-organization of filaments in dielectric-barrier discharges (DBDs) probably has many origins. However, the dominant cause is proposed to be the accumulation of charge on the surfaces of the bounding dielectrics that reinforces successive discharge pulses to occur at the same locations. A secondary cause is the electrostatic repulsion of individual plasma filaments. Self-organization typically develops over many discharge pulses. In this paper, we discuss the results of a computational investigation of plasma filaments in overvoltage DBDs that, under select conditions, display self-organized patterns (SOPs) of plasma density during a single discharge pulse. (Overvoltage refers to the rapid application of a voltage in excess of the quasi-dc breakdown voltage.) The origin of the SOPs is a synergistic relationship between the speed of the surface-ionization waves that propagate along each dielectric and the rate at which avalanche occurs across the gap. For our test conditions, SOPs were not observed at lower voltages and gradually formed at higher voltages. The same conditions that result in SOPs, i.e. the application of an overvoltage, also produce more diffuse discharges. A transition from a single narrow filament to a more diffuse structure was observed as overvoltage was approached. The sensitivity of SOPs to the orientation and permittivity of the bounding dielectrics is discussed. (paper)

  18. Experimental research on the stability of armour and secondary layer in a single layered Tetrapod breakwater

    NARCIS (Netherlands)

    De Jong, W.; Verhagen, H.J.; Olthof, J.

    2004-01-01

    Physical model tests were done on an armour of Tetrapods, placed in a single layer. The objective of the investigations was to study the stability of the secondary layer, and to see if the material of this secondary layer could be washed out through the single layer of Tetrapods. It was concluded

  19. Thin surface layers of SiO2 obtained from tetraethoxysilane (TEOS) in electric discharges stabilized by a dielectric barrier

    International Nuclear Information System (INIS)

    Schmidt-Szalowski, K.; Fabianowski, W.; Rzanek-Boroch, Z.; Gutkowski, R.

    1998-01-01

    The reported research was devoted to the process of thin layer deposition in a discharge at atmospheric pressure stabilized by a dielectric barrier. Thin surface layers composed mainly of silicon dioxide were produced by polycondensation of tetraethoxysilane vapor in mixtures with helium gas with a small amount of oxygen. The influence was studied of the voltage applied and of the time elapsed in the deposition process, on the thickness of the layer, as were the changes of composition of the deposited layers during and after storage. It is shown that good passivating pinhole-free silicon oxide layers can be produced in surface barrier discharges. (J.U.)

  20. Low-dielectric layer increases nanosecond electric discharges in distilled water

    KAUST Repository

    Hamdan, Ahmad

    2016-10-24

    Electric discharge in liquids is an emerging field of research, and is involved into various environmental applications (water purification, fuel reforming, nanomaterial synthesis, etc.). Increasing the treatment efficiency with simultaneous decreasing of the energy consumption are the main goals of today’s research. Here we present an experimental study of nanosecond discharge in distilled water covered by a layer of dielectric material. We demonstrate through this paper that the discharge efficiency can be improved by changing the interface position regarding the anode tip. The efficiency increase is due to the increase of the discharge probability as well as the plasma volume. The understanding of the experimental results is brought and strengthened by simulating the electric field distribution, using Comsol Multiphysics software. Because the dielectric permittivity (ε) is discontinuous at the interface, the electric field is enhanced by a factor that depends on the relative value of ε of the two liquids. The present result is very promising in future: opportunities for potential applications as well as fundamental studies for discharges in liquid.

  1. Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

    Directory of Open Access Journals (Sweden)

    Takashi Ando

    2012-03-01

    Full Text Available Current status and challenges of aggressive equivalent-oxide-thickness (EOT scaling of high-κ gate dielectrics via higher-κ ( > 20 materials and interfacial layer (IL scavenging techniques are reviewed. La-based higher-κ materials show aggressive EOT scaling (0.5–0.8 nm, but with effective workfunction (EWF values suitable only for n-type field-effect-transistor (FET. Further exploration for p-type FET-compatible higher-κ materials is needed. Meanwhile, IL scavenging is a promising approach to extend Hf-based high-κ dielectrics to future nodes. Remote IL scavenging techniques enable EOT scaling below 0.5 nm. Mobility-EOT trends in the literature suggest that short-channel performance improvement is attainable with aggressive EOT scaling via IL scavenging or La-silicate formation. However, extreme IL scaling (e.g., zero-IL is accompanied by loss of EWF control and with severe penalty in reliability. Therefore, highly precise IL thickness control in an ultra-thin IL regime ( < 0.5 nm will be the key technology to satisfy both performance and reliability requirements for future CMOS devices.

  2. Low-dielectric layer increases nanosecond electric discharges in distilled water

    Science.gov (United States)

    Hamdan, Ahmad; Cha, Min Suk

    2016-10-01

    Electric discharge in liquids is an emerging field of research, and is involved into various environmental applications (water purification, fuel reforming, nanomaterial synthesis, etc.). Increasing the treatment efficiency with simultaneous decreasing of the energy consumption are the main goals of today's research. Here we present an experimental study of nanosecond discharge in distilled water covered by a layer of dielectric material. We demonstrate through this paper that the discharge efficiency can be improved by changing the interface position regarding the anode tip. The efficiency increase is due to the increase of the discharge probability as well as the plasma volume. The understanding of the experimental results is brought and strengthened by simulating the electric field distribution, using Comsol Multiphysics software. Because the dielectric permittivity ( ɛ ) is discontinuous at the interface, the electric field is enhanced by a factor that depends on the relative value of ɛ of the two liquids. The present result is very promising in future: opportunities for potential applications as well as fundamental studies for discharges in liquid.

  3. Low-dielectric layer increases nanosecond electric discharges in distilled water

    Directory of Open Access Journals (Sweden)

    Ahmad Hamdan

    2016-10-01

    Full Text Available Electric discharge in liquids is an emerging field of research, and is involved into various environmental applications (water purification, fuel reforming, nanomaterial synthesis, etc.. Increasing the treatment efficiency with simultaneous decreasing of the energy consumption are the main goals of today’s research. Here we present an experimental study of nanosecond discharge in distilled water covered by a layer of dielectric material. We demonstrate through this paper that the discharge efficiency can be improved by changing the interface position regarding the anode tip. The efficiency increase is due to the increase of the discharge probability as well as the plasma volume. The understanding of the experimental results is brought and strengthened by simulating the electric field distribution, using Comsol Multiphysics software. Because the dielectric permittivity ( ε is discontinuous at the interface, the electric field is enhanced by a factor that depends on the relative value of ε of the two liquids. The present result is very promising in future: opportunities for potential applications as well as fundamental studies for discharges in liquid.

  4. Compressibility effects on the non-linear receptivity of boundary layers to dielectric barrier discharges

    Science.gov (United States)

    Denison, Marie F. C.

    The reduction of drag and aerodynamic heating caused by boundary layer transition is of central interest for the development of hypersonic vehicles. Receptivity to flow perturbation in the form of Tollmien-Schlichting (TS) wave growth often determines the first stage of the transition process, which can be delayed by depositing specific excitations into the boundary layer. Weakly ionized Dielectric Barrier Discharge (DBD) actuators are being investigated as possible sources of such excitations, but little is known today about their interaction with high-speed flows. In this framework, the first part of the thesis is dedicated to a receptivity study of laminar compressible boundary layers over a flat plate by linear stability analysis following an adjoint operator formulation, under DBD representative excitations assumed independent of flow conditions. The second part of the work concentrates on the development of a coupled plasma-Navier and Stokes solver targeted at the study of supersonic flow and compressibility effects on DBD forcing and non-parallel receptivity. The linear receptivity study of quasi-parallel compressible flows reveals several interesting features such as a significant shift of the region of maximum receptivity deeper into the flow at high Mach number and strong wave amplitude reduction compared to incompressible flows. The response to DBD relevant excitation distributions and to variations of the base flow conditions and system length scales follows these trends. Observed absolute amplitude changes and relative sensitivity modifications between source types are related to the evolution of the offset between forcing peak profile and relevant adjoint mode maximum. The analysis highlights the crucial importance of designing and placing the actuator in a way that matches its force field to the position of maximum boundary layer receptivity for the specific flow conditions of interest. In order to address the broad time and length scale spectrum

  5. Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide

    Directory of Open Access Journals (Sweden)

    P. Borowicz

    2013-01-01

    Full Text Available Three samples with dielectric layers from high-κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy. The results obtained for high-κ dielectrics were compared with spectra recorded for silicon dioxide. Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the bulk nondensified silicon dioxide. The temperature treatment of hafnium oxide shows the evolution of the structure of this material. Raman spectra recorded for as-deposited hafnium oxide are similar to the results obtained for silicon dioxide layer. After thermal treatment especially at higher temperatures (600°C and above, the structure of hafnium oxide becomes similar to the bulk non-densified silicon dioxide.

  6. Composite Nature of Layered Hybrid Perovskites: Assessment on Quantum and Dielectric Confinements and Band Alignment.

    Science.gov (United States)

    Traore, Boubacar; Pedesseau, Laurent; Assam, Linda; Che, Xiaoyang; Blancon, Jean-Christophe; Tsai, Hsinhan; Nie, Wanyi; Stoumpos, Constantinos C; Kanatzidis, Mercouri G; Tretiak, Sergei; Mohite, Aditya D; Even, Jacky; Kepenekian, Mikaël; Katan, Claudine

    2018-03-05

    Layered hybrid organic-inorganic perovskites (HOPs) have re-emerged as potential technological solutions for next-generation photovoltaic and optoelectronic applications. Their two-dimensional (2D) nature confers them a significant flexibility and results in the appearance of quantum and dielectric confinements. Such confinements are at the origin of their fascinating properties, and understanding them from a fundamental level is of paramount importance for optimization. Here, we provide an in-depth investigation of band alignments of 2D HOP allowing access to carriers' confinement potentials. 2D HOPs are conceptualized as composite materials in which pseudoinorganic and -organic components are defined. In this way, computational modeling of band alignments becomes affordable using first-principles methods. First, we show that the composite approach is suitable to study the position-dependent dielectric profiles and enables clear differentiation of the respective contributions of inorganic and organic components. Then we apply the composite approach to a variety of 2D HOPs, assessing the impact on the confinement potentials of well and barrier thickness, of the nature of the inorganic well, and of structural transitions. Using the deduced potentials, we further discuss the limitations of the effective mass approximation, scrutinizing the electronic properties of this family of composite materials. Our simulations demonstrate type-I dominant band alignment in 2D HOPs. Finally, we outline design principles on band alignment toward achieving specific optoelectronic properties. Thus, we present alternative theoretical methods to inspect the properties of 2D hybrid perovskites and expect that the composite approach will be applicable to other classes of layered materials.

  7. Single-layer model for surface roughness.

    Science.gov (United States)

    Carniglia, C K; Jensen, D G

    2002-06-01

    Random roughness of an optical surface reduces its specular reflectance and transmittance by the scattering of light. The reduction in reflectance can be modeled by a homogeneous layer on the surface if the refractive index of the layer is intermediate to the indices of the media on either side of the surface. Such a layer predicts an increase in the transmittance of the surface and therefore does not provide a valid model for the effects of scatter on the transmittance. Adding a small amount of absorption to the layer provides a model that predicts a reduction in both reflectance and transmittance. The absorbing layer model agrees with the predictions of a scalar scattering theory for a layer with a thickness that is twice the rms roughness of the surface. The extinction coefficient k for the layer is proportional to the thickness of the layer.

  8. Hydraulic Stability of Single-Layer Dolos and Accropode Armour Layers

    DEFF Research Database (Denmark)

    Christensen, M.; Burcharth, H. F.

    1995-01-01

    A new design for Dolos breakwater armour layers is presented: Dolos armour units are placed in a selected geometric pattern in a single layer. A series of model tests have been performed in order to determine the stability of such single-layer Dolos armour layers. The test results are presented...... and compared to the stability formula for the traditional double-layer, randomly placed Dolos armour layer design presented by Burcharth (1992). The results of a series of stability tests performed with Accropode® armour layers is presented and compared to the test results obtained with single-layer Dolos...... armour layers. Run-up and reflection are presented for both single-layer Dolos armour and Accropode armour....

  9. Radiation damage in dielectric and semiconductor single crystals (direct observation)

    CERN Document Server

    Adawi, M A; Varichenko, V S; Zaitsev, A M

    1998-01-01

    The surfaces of boron-doped synthetic and natural diamonds have been investigated by using the scanning tunnelling microscope (STM) and the scanning electronic microscope (SEM) before and after irradiating the samples with sup 4 sup 0 Ar (25 MeV), sup 8 sup 4 Kr (210 MeV) and sup 1 sup 2 sup 5 Xe (124 MeV) ions. The structures observed after irradiation showed craters with diameters ranging from 3 nm up to 20 nm, which could be interpreted as single ion tracks and multiple hits of ions at the nearest positions of the surface. In the case of argon ion irradiation, the surface was found to be completely amorphous, but after xenon irradiation one could see parts of surface without amorphism. This can be explained by the influence of high inelastic energy losses. The energy and temperature criteria of crater formation as a result of heavy ion irradiation are introduced.

  10. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Directory of Open Access Journals (Sweden)

    Murali Gedda

    2013-11-01

    Full Text Available Polyvinyl alcohol (PVA and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc wire base field-effect transistors (OFETs. CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  11. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Gedda, Murali; Obaidulla, Sk. Md. [Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 (India); Subbarao, Nimmakayala V. V. [Centre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039 (India); Goswami, Dipak K. [Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 (India); Centre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039 (India)

    2013-11-15

    Polyvinyl alcohol (PVA) and anodized Al{sub 2}O{sub 3} layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires were grown on SiO{sub 2} surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μ{sub EF}) value of 1.11 cm{sup 2}/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  12. Theory of differential and integral scattering of laser radiation by a dielectric surface taking a defect layer into account

    NARCIS (Netherlands)

    Azarova, VV; Dmitriev, VG; Lokhov, YN; Malitskii, KN

    The differential and integral light scattering by dielectric surfaces is studied theoretically taking a thin nearsurface defect layer into account. The expressions for the intensities of differential and total integral scattering are found by the Green function method. Conditions are found under

  13. Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors

    Directory of Open Access Journals (Sweden)

    Ji Heon Kim

    2016-06-01

    Full Text Available We investigated the dependence of electron mobility on the thickness of MoS2 nanosheets by fabricating bottom-gate single and few-layer MoS2 thin-film transistors with SiO2 gate dielectrics and Au electrodes. All the fabricated MoS2 transistors showed on/off-current ratio of ∼107 and saturated output characteristics without high-k capping layers. As the MoS2 thickness increased from 1 to 6 layers, the field-effect mobility of the fabricated MoS2 transistors increased from ∼10 to ∼18 cm2V−1s−1. The increased subthreshold swing of the fabricated transistors with MoS2 thickness suggests that the increase of MoS2 mobility with thickness may be related to the dependence of the contact resistance and the dielectric constant of MoS2 layer on its thickness.

  14. Properties of PZT thick film made on LTCC substrates with dielectric intermediate layers

    Science.gov (United States)

    DÄ browski, Arkadiusz; Golonka, Leszek

    2016-11-01

    Results of experiments on application of various interlayers between LTCC (Low Temperature Cofired Ceramics) substrate and thick-film PZT (Lead Zirconate - Titanate) are described in this work. Thick-film intermediate layers were based on several dielectric materials: TiN, Al2O3, SiC, TiO2, SiC, YSZ, BN. Seven screen printable pastes were prepared on the base of powders of mentioned materials with addition of glass and organic vehicle. The substrates were made of 951 (DuPont), CeramTapeGC (CeramTec) and HL2000 (Heraeus) LTCC tapes. Sandwich type transducers, consisting of barrier layer, gold bottom electrode, PZT layer and silver top electrode were prepared and characterized. Basic piezoelectric parameters - permittivity, effective charge constant (d33(eff)) and remanent polarization were determined. The best properties were obtained for substrates made of 951. In general, interlayers based on TiO2, SiC and Al2O3 improved permittivity and charge constant comparing to bare substrates. For example, for 951 substrate the PZT layer exhibited d33(eff) equal to 160, 215, 250 and 230 pC/N for bare substrate, TiO2 interlayer, SiC interlayer and Al2O3 interlayer, respectively. In case of CeramTape GC substrates determined permittivity was equal to 215, 245, 235 and 275 for bare substrate, TiO2 interlayer, SiC interlayer and Al2O3 interlayer, respectively. In case of TiN and BN materials the parameters were considerably deteriorated.

  15. Polyimide Dielectric Layer on Filaments for Organic Field Effect Transistors: Choice of Solvent, Solution Composition and Dip-Coating Speed

    Directory of Open Access Journals (Sweden)

    Rambausek Lina

    2014-09-01

    Full Text Available In today’s research, smart textiles is an established topic in both electronics and the textile fields. The concept of producing microelectronics directly on a textile substrate is not a mere idea anymore and several research institutes are working on its realisation. Microelectronics like organic field effect transistor (OFET can be manufactured with a layered architecture. The production techniques used for this purpose can also be applied on textile substrates. Besides gate, active and contact layers, the isolating or dielectric layer is of high importance in the OFET architecture. Therefore, generating a high quality dielectric layer that is of low roughness and insulating at the same time is one of the fundamental requirements in building microelectronics on textile surfaces. To evaluate its potential, we have studied polyimide as a dielectric layer, dip-coated onto copper-coated polyester filaments. Accordingly, the copper-coated polyester filament was dip-coated from a polyimide solution with two different solvents, 1-methyl-2-pyrrolidone (NMP and dimethylformaldehyde. A variety of dip-coating speeds, solution concentrations and solvent-solute combinations have been tested. Their effect on the quality of the layer was analysed through microscopy, leak current measurements and atomic force microscopy (AFM. Polyimide dip-coating with polyimide resin dissolved in NMP at a concentration of 15w% in combination with a dip-coating speed of 50 mm/min led to the best results in electrical insulation and roughness. By optimising the dielectric layer’s properties, the way is paved for applying the subsequent semi-conductive layer. In further research, we will be working with the organic semiconductor material TIPS-Pentacene

  16. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    Science.gov (United States)

    Xu, Runshen

    Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

  17. Inverse scattering of a layered and dispersionless dielectric half-space - 1. reflection data from plane waves at normal incidence

    International Nuclear Information System (INIS)

    Coen, S.

    1981-01-01

    The theory given by Moses and deRidder is modified so that the derivative of the solution of the Gelfand-Levitan integral equation is not required. Based on this modification, a numerical procedure is developed which approximately constructs the dielectric profile of the layered half-space from the impulse response. Moreover, an inverse scattering theory is developed for a Goupillaud-type dielectric medium, and a fast numerical procedure based on the Berryman and Greene algorithm is presented. The performance of the numerical algorithms is examined by applying them to pecise and imprecise artificial impulse response data. 11 refs

  18. Flexible FETs using ultrathin Si microwires embedded in solution processed dielectric and metal layers

    International Nuclear Information System (INIS)

    Khan, S; Yogeswaran, N; Lorenzelli, L; Taube, W; Dahiya, R

    2015-01-01

    This work presents a novel manufacturing route for obtaining high performance bendable field effect transistors (FET) by embedding silicon (Si) microwires (2.5 μm thick) in layers of solution-processed dielectric and metallic layers. The objective of this study is to explore heterogeneous integration of Si with polymers and to exploit the benefits of both microelectronics and printing technologies. Arrays of Si microwires are developed on silicon on insulator (SOI) wafers and transfer printed to polyimide (PI) substrate through a polydimethylsiloxane (PDMS) carrier stamp. Following the transfer printing of Si microwires, two different processing steps were developed to obtain top gate top contact and back gate top contact FETs. Electrical characterizations indicate devices having mobility as high as 117.5 cm 2 V −1 s −1 . The fabricated devices were also modeled using SILVACO Atlas. Simulation results show a trend in the electrical response similar to that of experimental results. In addition, a cyclic test was performed to demonstrate the reliability and mechanical robustness of the Si μ-wires on flexible substrates. (paper)

  19. Flexible FETs using ultrathin Si microwires embedded in solution processed dielectric and metal layers

    Science.gov (United States)

    Khan, S.; Yogeswaran, N.; Taube, W.; Lorenzelli, L.; Dahiya, R.

    2015-12-01

    This work presents a novel manufacturing route for obtaining high performance bendable field effect transistors (FET) by embedding silicon (Si) microwires (2.5 μm thick) in layers of solution-processed dielectric and metallic layers. The objective of this study is to explore heterogeneous integration of Si with polymers and to exploit the benefits of both microelectronics and printing technologies. Arrays of Si microwires are developed on silicon on insulator (SOI) wafers and transfer printed to polyimide (PI) substrate through a polydimethylsiloxane (PDMS) carrier stamp. Following the transfer printing of Si microwires, two different processing steps were developed to obtain top gate top contact and back gate top contact FETs. Electrical characterizations indicate devices having mobility as high as 117.5 cm2 V-1 s-1. The fabricated devices were also modeled using SILVACO Atlas. Simulation results show a trend in the electrical response similar to that of experimental results. In addition, a cyclic test was performed to demonstrate the reliability and mechanical robustness of the Si μ-wires on flexible substrates.

  20. Nanosecond laser-induced nanostructuring of thin metal layers and dielectric surfaces

    Science.gov (United States)

    Lorenz, P.; Klöppel, M.; Ehrhardt, M.; Zimmer, K.; Schwaller, P.

    2015-03-01

    Nanostructuring of dielectric surfaces has a widespread field of applications. In this work the recently introduced laser method validates this novel concept for complex nanostructuring of dielectric surfaces. This concept combines the mechanism of self-assembly of metal films due to laser irradiation with the concept of laser-assisted transfer of these patterns into the underlying material. The present work focuses on pattern formation in fused silica near the border of the laser spot, where distorted nested ring-like patterns were found in contrast to concentric ring patterns at homogeneous laser irradiation. For the experiments a lateral homogeneous spot of a KrF excimer laser (λ = 248 nm) and a Gaussian beam Yb fiber laser (λ = 1064 nm) was used for irradiation of a thin chromium layer onto fused silica resulting in the formation of different ring structures into the fused silica surface. The obtained structures were analysed by AFM and SEM. It is found that the mechanism comprises laser-induced metal film melting, contraction of the molten metal, and successive transfer of the metal hole geometry to the fused silica. Simulations taking into account the heat and the Navier-Stokes equations were compared with the experimental results. A good agreement of simulation results with experimental data was found. These first results demonstrate that the variation of the laser beam profile allows the local control of the melt dynamics which causes changes of the shape and the size of the ring patterns. Hence, a light-controlled self-assembly is feasible.

  1. Characteristics of powdered activated carbon treated with dielectric barrier discharge for electric double-layer capacitors

    International Nuclear Information System (INIS)

    Tashima, Daisuke; Yoshitama, Hiromu; Sakoda, Tatsuya; Okazaki, Akihito; Kawaji, Takayuki

    2012-01-01

    Highlights: ► The specific capacitance of the EDLCs could be improved by oxygen plasma treatment. ► 15 s treated EDLCs showed a 20% increase in capacitance relative to untreated EDLCs. ► The plasma treatment yields EDLCs that are suitable for high-energy applications. - Abstract: The electrochemical properties of electric double-layer capacitors (EDLCs) made with plasma-treated powdered activated carbon (treated using a dielectric barrier discharge) were examined using cyclic voltammetry (CV), Cole–Cole plots, and X-ray photoelectron spectroscopy (XPS). The dielectric barrier discharge method, which operates at atmospheric pressure, dramatically reduces the processing time and does not require vacuum equipment, making it a more practical alternative than low-pressure plasma treatment. The experimental data indicate that the specific capacitance of the EDLCs could be improved by oxygen plasma treatment. Capacitance of EDLCs made with activated carbon treated for 15 s showed 193.5 F/g that 20% increase in the specific capacitance relative to untreated EDLCs. This result indicates that the plasma treatment yields EDLCs that are suitable for high-energy applications. The enhancement of capacitance was mainly attributed to an increase in the BET surface area of the activated carbon and the creation of carboxyl groups on the surface of the carbon. The carboxyl groups induced oxidation–reduction reactions in the presence of O 2 which was included in the operation gas. In addition, the carboxyl groups improved the penetration of the electrolyte solution into the carbon electrodes.

  2. Growth of high-crystalline, single-layer hexagonal boron nitride on recyclable platinum foil.

    Science.gov (United States)

    Kim, Gwangwoo; Jang, A-Rang; Jeong, Hu Young; Lee, Zonghoon; Kang, Dae Joon; Shin, Hyeon Suk

    2013-04-10

    Hexagonal boron nitride (h-BN) is gaining significant attention as a two-dimensional dielectric material, along with graphene and other such materials. Herein, we demonstrate the growth of highly crystalline, single-layer h-BN on Pt foil through a low-pressure chemical vapor deposition method that allowed h-BN to be grown over a wide area (8 × 25 mm(2)). An electrochemical bubbling-based method was used to transfer the grown h-BN layer from the Pt foil onto an arbitrary substrate. This allowed the Pt foil, which was not consumed during the process, to be recycled repeatedly. The UV-visible absorption spectrum of the single-layer h-BN suggested an optical band gap of 6.06 eV, while a high-resolution transmission electron microscopy image of the same showed the presence of distinct hexagonal arrays of B and N atoms, which were indicative of the highly crystalline nature and single-atom thickness of the h-BN layer. This method of growing single-layer h-BN over large areas was also compatible with use of a sapphire substrate.

  3. Atomic Layer Epitaxy Dielectric Based GaN MOS Devices and Beyond

    Science.gov (United States)

    Zhou, Hong

    GaN HEMT usually suffers from high Ig and ID current collapse due to its limited Schottky barrier height and high density of surface states. Although GaN MOSHEMT with amorphous gate dielectric is an effective way to suppress the Ig and passivate the surface states, high-quality gate dielectric on GaN MOS devices are still lacking. In this work, single crystalline gate dielectric Mg0.25Ca0.75O, grown by ALE, has been successfully integrated into three kinds of GaN MOSHEMTs, namely InAlN/GaN/SiC, AlGaN/GaN/SiC and AlGaN/GaN/Si MOSHEMTs. With a nearly lattice-matched oxide, the interface quality between the oxide and barrier is significantly improved. Ig is reduced by several orders of magnitudes compared to HEMTs. All three kinds of MOSHEMTs exhibit high ID on/off ratio exceeding 1011, near ideal SS, negligible ID-V GS hysteresis and negligible current collapse. RF small-signal characteristics of AlGaN/GaN/SiC MOSHEMTs show ft/fmax of 101/150 GHz for a Lg of 120 nm device and large-signal characteristics with Pout of 4.18 W/mm for a Lg=150 nm device at f=35 GHz. Enhancement-mode non-recessed AlGaN/GaN/Si fin-MOSHEMTs are also realized through the side-wall depletion of the fin structures. Combining with the high ID, high peak gm, and low Ron, MgCaO turns out to be a new and very promising gate dielectric for GaN MOS technology. Beyond the wide bandgap semiconductor GaN, promising next generation ultra-wide bandgap semiconductor beta-Ga2O3 is also investigated. Piranha solution and PDA were first used to optimize the ALD Al2O3/beta-Ga2O3 interface. Low C-V hysteresis of 0.1 V and Dit=2.3x1011 cm-2˙eV-1 are achieved due to the passivated dangling bonds at the interface. Meanwhile, we have demonstrated a record high ID of 600/450 mA/mm for D/E-mode back-gate GOOI FETs at a beta-Ga2O3 doping concentration of 2.8x1018 cm-3. Following the motivation of chasing higher I D and lower Ron, we have increased the doping concentration to 7.8x1018 cm-3 and the record ID has been

  4. A pentacene thin film transistor with good performance using sol-gel derived SiO2 gate dielectric layer

    Science.gov (United States)

    Cavas, M.; Al-Ghamdi, Ahmed A.; Al-Hartomy, O. A.; El-Tantawy, F.; Yakuphanoglu, F.

    2013-02-01

    A low-voltage pentacene field-effect transistor with sol-gel derived SiO2 gate dielectric was fabricated. The mobility of the transistor was achieved as high as 1.526 cm2/V on the bared SiO2/Si substrate by a higher dielectric constant. The interface state density for the transistor was found to vary from 3.8 × 1010 to 7.5 × 1010 eV-1 cm-2 at frequency range of 100 kHz-1 MHz. It is evaluated that the SiO2 derived by low cost sol-gel is quite a promising candidate as a gate dielectric layer for low-voltage pentacene field-effect transistor.

  5. Adsorption and electronic properties of pentacene on thin dielectric decoupling layers

    Directory of Open Access Journals (Sweden)

    Sebastian Koslowski

    2017-07-01

    Full Text Available With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111 and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111 results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111, as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal–molecule interaction, which decreases the HOMO–LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS and their shapes can be resolved by spectroscopic mapping.

  6. Structural, optical and dielectric studies of lithium sulphate monohydrate single crystals

    Directory of Open Access Journals (Sweden)

    Najar F.A.

    2017-02-01

    Full Text Available Optical, dielectric, and thermal properties of lithium sulphate monohydrate crystals grown by slow evaporation method have been studied. The crystal structure was resolved by direct methods using single crystal X-ray diffraction data collected at room temperature and refined by full-matrix least-squares procedures to a final R-value of 0.0174. Plasma energy, Penn gap, Fermi energy and electronic polarizability of the grown crystal were calculated from single crystal XRD data. The electronic polarizability of lithium sulfate monohydrate was also calculated and compared with the theoretical data using Clausius-Mossotti equation. Optical band gap calculated from optical data for the grown crystal is 4.49 eV. Fourier Transform Infrared Spectroscopy study confirmed the presence of water in the crystal structure. The AC conductivity, dielectric constant and dielectric loss of the grown crystal were systemically investigated, showing a peak at about 130 °C which could be attributed to the water molecules in the crystal structure. The anomalous dielectric properties shown by the crystal have been correlated with its thermal behavior. The title crystal obeys Jonscher’s power law relation; σ(ω = σo+ Aωs, with temperature dependent exponent s < 1. The activation energy calculated for the material is 0.24 eV and suggests protonic conduction by hopping mechanism in addition to cationic conduction by lithium ions. The micro-indentation study was also carried out which revealed that the crystal belongs to a category of soft materials.

  7. Breakwater stability with damaged single layer armour units

    NARCIS (Netherlands)

    De Rover, R.; Verhagen, H.J.; Van den Berge, A.; Reedijk, B.

    2008-01-01

    The effect of single layer interlocking armour unit breakage on the hydraulic armour layer stability and potential damage progression is addressed in this paper. A 2-dimensional scale model of a rubble mound breakwater with an armour layer consisting of Xbloc armour units was tested. The residual

  8. The impact of porosity on the formation of manganese based copper diffusion barrier layers on low-κ dielectric materials

    International Nuclear Information System (INIS)

    McCoy, A P; Bogan, J; Walsh, L; Byrne, C; O’Connor, R; Hughes, G; Woicik, J C

    2015-01-01

    This work investigates the impact of porosity in low-κ dielectric materials on the chemical and structural properties of deposited Mn thin films for copper diffusion barrier layer applications. X-ray photoelectron spectrscopy (XPS) results highlight the difficulty in distinguishing between the various Mn oxidation states which form at the interlayer dielectric (ILD)/Mn interface. The presence of MnSiO 3 and MnO were identified using x-ray absorption spectroscopy (XAS) measurements on both porous and non-porous dielectric materials with evidence of Mn 2 O 3 and Mn 3 O 4 in the deposited film on the latter surface. It is shown that a higher proportion of deposited Mn converts to Mn silicate on an ILD film which has 50% porosity compared with the same dielectric material with no porosity, which is attributed to an enhanced chemical interaction with the effective larger surface area of porous dielectric materials. Transmission electron microscopy (TEM) and energy-dispersive x-ray spectroscopy (EDX) data shows that the Mn overlayer remains predominately surface localised on both porous and non-porous materials. (paper)

  9. Hydrophobic dielectric surface influenced active layer thickness effect on hysteresis and mobility degradation in organic field effect transistors

    Science.gov (United States)

    Padma, N.

    2016-02-01

    Effect of active layer thickness, influenced by the hydrophobic dielectric surface, on the performance of copper phthalocyanine based organic field effect transistors (OFETs) was studied. While charge carrier mobility was found to be highest for an optimum thickness of 30 nm, hysteresis and threshold voltage shift were found to be minimum for 15 nm thick film which is attributed to the excess availability of photogenerated carriers, especially close to the dielectric/semiconductor interface, as this thickness is within the exciton quenching length in organic semiconductors. But prolonged bias stress resulted in larger decay in drain current for higher thickness indicating the dominant role played by the larger grain boundary density in the increased volume. These results were found to be different from that on unmodified SiO2 dielectric with higher surface energy and were suggested to be caused by the 3D growth mode of CuPc films on the hydrophobic surface. Mobility degradation at higher gate voltages also exhibited a dependence on the active layer thickness which was tuned by the hydrophobic surface induced growth mode at the dielectric/semiconductor interface.

  10. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    Directory of Open Access Journals (Sweden)

    Laura B. Ruppalt

    2014-12-01

    Full Text Available In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD high-k dielectric stacks with device-quality p-type GaSb(001 epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  11. Defect free single crystal thin layer

    KAUST Repository

    Elafandy, Rami Tarek Mahmoud

    2016-01-28

    A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.

  12. Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors

    Science.gov (United States)

    Sang, Liwen; Ren, Bing; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

    2018-04-01

    The capacitance-voltage (C-V) hysteresis in the bidirectional measurements of the p-GaN metal-insulator-semiconductor (MIS) capacitor is suppressed by using a CaF2 dielectric layer and a post annealing treatment. The density of trapped charge states at the CaF2/p-GaN interface is dramatically reduced from 1.3 × 1013 cm2 to 1.1 × 1011/cm2 compared to that of the Al2O3/p-GaN interface with a large C-V hysteresis. It is observed that the disordered oxidized interfacial layer can be avoided by using the CaF2 dielectric. The downward band bending of p-GaN is decreased from 1.51 to 0.85 eV as a result of the low-density oxides-related trap states. Our work indicates that the CaF2 can be used as a promising dielectric layer for the p-GaN MIS structures.

  13. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

    Science.gov (United States)

    Perkins, Charles M.; Triplett, Baylor B.; McIntyre, Paul C.; Saraswat, Krishna C.; Haukka, Suvi; Tuominen, Marko

    2001-04-01

    Structural and electrical properties of gate stack structures containing ZrO2 dielectrics were investigated. The ZrO2 films were deposited by atomic layer chemical vapor deposition (ALCVD) after different substrate preparations. The structure, composition, and interfacial characteristics of these gate stacks were examined using cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The ZrO2 films were polycrystalline with either a cubic or tetragonal crystal structure. An amorphous interfacial layer with a moderate dielectric constant formed between the ZrO2 layer and the substrate during ALCVD growth on chemical oxide-terminated silicon. Gate stacks with a measured equivalent oxide thickness (EOT) of 1.3 nm showed leakage values of 10-5 A/cm2 at a bias of -1 V from flatband, which is significantly less than that seen with SiO2 dielectrics of similar EOT. A hysteresis of 8-10 mV was seen for ±2 V sweeps while a midgap interface state density (Dit) of ˜3×1011 states/cm eV was determined from comparisons of measured and ideal capacitance curves.

  14. An Iterative Method for Solving of Coupled Equations for Conductive-Radiative Heat Transfer in Dielectric Layers

    Directory of Open Access Journals (Sweden)

    Vasyl Chekurin

    2017-01-01

    Full Text Available The mathematical model for describing combined conductive-radiative heat transfer in a dielectric layer, which emits, absorbs, and scatters IR radiation both in its volume and on the boundary, has been considered. A nonlinear stationary boundary-value problem for coupled heat and radiation transfer equations for the layer, which exchanges by energy with external medium by convection and radiation, has been formulated. In the case of optically thick layer, when its thickness is much more of photon-free path, the problem becomes a singularly perturbed one. In the inverse case of optically thin layer, the problem is regularly perturbed, and it becomes a regular (unperturbed one, when the layer’s thickness is of order of several photon-free paths. An iterative method for solving of the unperturbed problem has been developed and its convergence has been tested numerically. With the use of the method, the temperature field and radiation fluxes have been studied. The model and method can be used for development of noncontact methods for temperature testing in dielectrics and for nondestructive determination of its radiation properties on the base of the data obtained by remote measuring of IR radiation emitted by the layer.

  15. LENA Conversion Foils Using Single-Layer Graphene, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Our key innovation will be the use of single-layer graphene as LENA conversion foils, with appropriate microgrids and nanogrids to support the foils. Phase I...

  16. Functionalization of Single Layer MoS$_2$ Honeycomb Structures

    OpenAIRE

    Ataca, C.; Ciraci, S.

    2010-01-01

    Based on the first-principles plane wave calculations, we studied the functionalization of the two-dimensional single layer MoS$_2$ structure via adatom adsorption and vacancy defect creation. Minimum energy adsorption sites are determined for sixteen different adatoms, each gives rise to diverse properties. Bare, single layer MoS$_2$, which is normally a nonmagnetic, direct band gap semiconductor, attains a net magnetic moment upon adsorption of specific transition metal atoms, as well as si...

  17. 7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors

    Science.gov (United States)

    Huang, Jie; Lee, Mingun; Lucero, Antonio T.; Cheng, Lanxia; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    We demonstrate the fabrication of 7-octenytrichlorosilane (7-OTS)/trimethylaluminum (TMA) organic-inorganic hybrid films using molecular-atomic layer deposition (MALD). The properties of 7-OTS/TMA hybrid films are extensively investigated using transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), and electrical measurements. Our results suggest that uniform and smooth amorphous hybrid thin films with excellent insulating properties are obtained using the MALD process. Films have a relatively high dielectric constant of approximately 5.0 and low leakage current density. We fabricate zinc oxide (ZnO) based thin film transistors (TFTs) using 7-OTS/TMA hybrid material as a back gate dielectric with the top ZnO channel layer deposited in-situ via MALD. The ZnO TFTs exhibit a field effect mobility of approximately 0.43 cm2 V-1 s-1, a threshold voltage of approximately 1 V, and an on/off ratio of approximately 103 under low voltage operation (from -3 to 9 V). This work demonstrates an organic-inorganic hybrid gate dielectric material potentially useful in flexible electronics application.

  18. Toward the Physical Basis of Complex Systems: Dielectric Analysis of Porous Silicon Nanochannels in the Electrical Double Layer Length Range

    Directory of Open Access Journals (Sweden)

    Radu Mircea Ciuceanu

    2011-01-01

    Full Text Available Dielectric analysis (DEA shows changes in the properties of
    a materials as a response to the application on it of a time dependent electric field. Dielectric measurements are extremely sensitive to small changes in materials properties, that molecular relaxation, dipole changes, local motions that involve the reorientation of dipoles, and so can be observed by DEA. Electrical double layer (EDL, consists in a shielding layer that is naturally created within the liquid near a charged surface. The thickness of the EDL is given by the characteristic Debye length what grows less with the ionic strength defined by half summ products of concentration with square of charge for all solvent
    ions (co-ions, counterions, charged molecules. The typical length scale for the Debye length is on the order of 1 nm, depending on the ionic contents in the solvent; thus, the EDL becomes significant for nano-capillaries that nanochannels. The electrokinetic e®ects in the nanochannels depend essentialy on the distribution of charged species in EDL, described by the Poisson-Boltzmann equation those solutions require the solvent dielectric permittivity. In this work we propose a model for solvent low-frequency permittivity and a DEA profile taking into account both the porous silicon electrode and aqueous solvent properties in the Debye length range.

  19. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

    KAUST Repository

    Nayak, Pradipta K.

    2014-04-14

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.

  20. Single frequency correction based on three-element model for thin dielectric MOS capacitor

    Science.gov (United States)

    Zhang, Xizhen; Zhu, Huichao; Cheng, Chuanhui; Yu, Tao; Zhang, Daming; Zhong, Hua; Li, Xiangping; Cheng, Yi; Xu, Xuesong; Cheng, Lihong; Sun, Jiashi; Chen, Baojiu

    2017-03-01

    For super thin dielectric MOS capacitor, capacitance extraction by using two-element model is erroneous. Three-element model, considering parasitic parameters of parallel resistance Rp and series resistance Rs, is necessary. In this paper, we develop a single frequency correction method by combining capacitance-voltage (C-V) and current-voltage (I-V) data. By equating impedances of three-element model with that of two-element model, we obtain two characteristic equations. By using a differential resistance dV/dI, we obtain the third equation. Consequently, three real parameters for the capacitance C, the Rp and the Rs are solved. As an application example of Al/HfO2/n-Si MOS, we demonstrate physically reasonable values for all three real parameters. Furthermore, dielectric loss tangent tan δ is calculated as 0.005-0.022 at 1.5 V. A simplified expression of measured capacitance Cm about the C, the Rp, the Rs and angular frequency ω has been deduced. A constraint condition for large ratio Cm/C suggests the reduction of the ratio Rs/Rp and Rs. Considering suitable values for tan δ and ratio of Cm/C, applicable frequency range is from 15 kHz to 1.1-2.1 MHz.

  1. Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone.

    Science.gov (United States)

    Cheng, Lanxia; Qin, Xiaoye; Lucero, Antonio T; Azcatl, Angelica; Huang, Jie; Wallace, Robert M; Cho, Kyeongjae; Kim, Jiyoung

    2014-08-13

    We present an Al2O3 dielectric layer on molybdenum disulfide (MoS2), deposited using atomic layer deposition (ALD) with ozone/trimethylaluminum (TMA) and water/TMA as precursors. The results of atomic force microscopy and low-energy ion scattering spectroscopy show that using TMA and ozone as precursors leads to the formation of uniform Al2O3 layers, in contrast to the incomplete coverage we observe when using TMA/H2O as precursors. Our Raman and X-ray photoelectron spectroscopy measurements indicate minimal variations in the MoS2 structure after ozone treatment at 200 °C, suggesting its excellent chemical resistance to ozone.

  2. Biosensor properties of SOI nanowire transistors with a PEALD Al{sub 2}O{sub 3} dielectric protective layer

    Energy Technology Data Exchange (ETDEWEB)

    Popov, V. P., E-mail: popov@isp.nsc.ru; Ilnitskii, M. A.; Zhanaev, E. D. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Myakon’kich, A. V.; Rudenko, K. V. [Russian Academy of Sciences, Physical Technological Institute (Russian Federation); Glukhov, A. V. [Novosibirsk Semiconductor Device Plant and Design Bureau (Russian Federation)

    2016-05-15

    The properties of protective dielectric layers of aluminum oxide Al{sub 2}O{sub 3} applied to prefabricated silicon-nanowire transistor biochips by the plasma enhanced atomic layer deposition (PEALD) method before being housed are studied depending on the deposition and annealing modes. Coating the natural silicon oxide with a nanometer Al{sub 2}O{sub 3} layer insignificantly decreases the femtomole sensitivity of biosensors, but provides their stability in bioliquids. In deionized water, transistors with annealed aluminum oxide are closed due to the trapping of negative charges of <(1–10) × 10{sup 11} cm{sup −2} at surface states. The application of a positive potential to the substrate (V{sub sub} > 25 V) makes it possible to eliminate the negative charge and to perform multiple measurements in liquid at least for half a year.

  3. Synthesis of single-crystalline Al layers in sapphire

    International Nuclear Information System (INIS)

    Schlosser, W.; Lindner, J.K.N.; Zeitler, M.; Stritzker, B.

    1999-01-01

    Single-crystalline, buried aluminium layers were synthesized by 180 keV high-dose Al + ion implantation into sapphire at 500 deg. C. The approximately 70 nm thick Al layers exhibit in XTEM investigations locally abrupt interfaces to the single-crystalline Al 2 O 3 top layer and bulk, while thickness and depth position are subjected to variations. The layers grow by a ripening process of oriented Al precipitates, which at low doses exist at two different orientations. With increasing dose, precipitates with one out of the two orientations are observed to exist preferentially, finally leading to the formation of a single-crystalline layer. Al outdiffusion to the surface and the formation of spherical Al clusters at the surface are found to be competing processes to buried layer formation. The formation of Al layers is described by Rutherford Backscattering Spectroscopy (RBS), Cross-section transmission electron microscopy (XTEM) and Scanning electron microscopy (SEM) studies as a function of dose, temperature and substrate orientation

  4. Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors

    Science.gov (United States)

    Suri, Rahul

    The purpose of this research work was to investigate the surface passivation methods and metal gate/high-k dielectric gate stacks for metal-oxide-semiconductor devices (MOS) on III-V compound semiconductor materials -- (i) GaAs for future high-speed low-power logic devices and (ii) AlGaN/GaN heterostructure for future high-speed high-power devices. GaAs is a candidate material for high-mobility channel in a NMOS transistor to extend the CMOS scaling up to and beyond the 16-nm technology node. AlGaN/GaN heterostructure is useful in a MOS-high electron mobility transistor (MOS-HEMT) device for providing a high current-carrying two dimensional electron gas (2DEG) channel. The interaction of GaAs surface with atomic layer deposition of high- k dielectrics was investigated to gain fundamental insights into the chemical properties of GaAs surface oxides and high-k/GaAs interface. Electrical characterization of devices was performed to understand the impact of high-k/GaAs interface on MOS device characteristics in order to form a suitable metal/high-k/GaAs gatestack for future high-speed logic and power devices. Reduction of native oxides on GaAs was found to occur during atomic layer deposition (ALD) of high-k dielectrics- HfO2 and Al2O3/HfO 2 nanolaminates on GaAs. Reaction between ALD metal precursor and native oxides on GaAs was identified to be the cause for consumption of native oxides. It was established that the ALD growth temperature has a strong impact on this phenomenon. During post-dielectric annealing the residual arsenic oxides at the interface decomposed leading to an increase in the interfacial gallium oxides. Presence of gallium oxide, Ga2O3 was identified as a cause for observed frequency dispersion in MOS capacitance-voltage curves indicative of a high interface state density. The chemical properties of the AlGaN/GaN heterostructure surface prepared by wet chemical treatment using HCl/HF and NH4OH solutions were investigated and compared. Both HCl and

  5. Polarization Dependence of Surface Enhanced Raman Scattering on a Single Dielectric Nanowire

    Directory of Open Access Journals (Sweden)

    Hua Qi

    2012-01-01

    Full Text Available Our measurements of surface enhanced Raman scattering (SERS on Ga2O3 dielectric nanowires (NWs core/silver composites indicate that the SERS enhancement is highly dependent on the polarization direction of the incident laser light. The polarization dependence of the SERS signal with respect to the direction of a single NW was studied by changing the incident light angle. Further investigations demonstrate that the SERS intensity is not only dependent on the direction and wavelength of the incident light, but also on the species of the SERS active molecule. The largest signals were observed on an NW when the incident 514.5 nm light was polarized perpendicular to the length of the NW, while the opposite phenomenon was observed at the wavelength of 785 nm. Our theoretical simulations of the polarization dependence at 514.5 nm and 785 nm are in good agreement with the experimental results.

  6. Dielectric behavior and phase transition in [111]-oriented PIN–PMN–PT single crystals under dc bias

    Directory of Open Access Journals (Sweden)

    Yuhui Wan

    2014-01-01

    Full Text Available Temperature and electric field dependences of the dielectric behavior and phase transition for [111]-oriented 0.23PIN–0.52PMN–0.25PT (PIN-PMN–0.25PT and 0.24PIN–0.43PMN–0.33PT (PIN–PMN–0.33PT single crystals were investigated over a temperature range from -100°C to 250°C using field-heating (FH dielectric measurements. The transition phenomenon from ferroelectric microdomain to macrodomain was found in rhombohedra (R phase region in the single crystals under dc bias. This transition temperature Tf of micro-to-macrodomain is sensitive to dc bias and move quickly to lower temperature with increasing dc bias. The phase transition temperatures in the two single crystals shift toward high temperature and the dielectric permittivities at the phase transition temperature decrease with increasing dc bias. Especially, the phase transition peaks are gradually broad in PIN–PMN–0.33PT single crystal with the increasing dc bias. Effects of dc bias on the dielectric behavior and phase transition in PIN–PMN–PT single crystals are discussed.

  7. Single Layered Versus Double Layered Intestinal Anastomosis: A Randomized Controlled Trial

    Science.gov (United States)

    Mohapatra, Vandana; Singh, Surendra; Rath, Pratap Kumar; Behera, Tapas Ranjan

    2017-01-01

    Introduction Gastrointestinal anastomosis is one of the most common procedures being performed in oesophagogastric, hepatobiliary, bariatric, small bowel and colorectal surgery; however, the safety and efficacy of single layer or double layer anastomotic technique is still unclear. Aim To assess and compare the efficacy, safety and cost effectiveness of single layered versus double layered intestinal anastomosis. Materials and Methods This prospective, double-blind, randomized controlled comparative study comprised of patients who underwent intestinal resection and anastomosis. They were randomly assigned to undergo either single layered extra-mucosal anastomosis (Group-A) or double layered intestinal anastomosis (Group-B). Primary outcome measures included average time taken for anastomosis, postoperative complications, mean duration of hospital stay and cost of suture material used; secondary outcome measures assessed the postoperative return of bowel function. Statistical analysis was done by Chi-square test and student t-test. Results A total of 97 participants were randomized. Fifty patients were allocated to single layered extramucosal continuous anastomosis (Group-A) and 47 patients to double layered anastomosis (Group-B). The patients in each group were well matched for age, sex and diagnosis. The mean time taken for anastomosis (15.12±2.27 minutes in Group-A versus 24.38±2.26 minutes in Group-B) and the length of hospital stay (5.90±1.43 days in Group-A versus 7.29±1.89 days in Group-B) was significantly shorter in Group-A {p-value anastomosis. However, there was no significant difference in the complication rates between the two groups. Conclusion It can be concluded that single layered extramucosal continuous intestinal anastomosis is equally safe and perhaps more cost effective than the conventional double layered method and may represent the optimal choice for routine surgical practice. PMID:28764239

  8. High-Performance Organic Field-Effect Transistors with Dielectric and Active Layers Printed Sequentially by Ultrasonic Spraying

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Ming [ORNL; Sanjib, Das [University of Tennessee, Knoxville (UTK); Chen, Jihua [ORNL; Keum, Jong Kahk [ORNL; Ivanov, Ilia N [ORNL; Gu, Gong [University of Tennessee, Knoxville (UTK); Geohegan, David B [ORNL; Xiao, Kai [ORNL

    2013-01-01

    High-performance, flexible organic field-effect transistors (OFETs) are reported with PVP dielectric and TIPS-PEN active layers sequentially deposited by ultrasonic spray-coating on plastic substrate. OFETs fabricated in ambient air with a bottom-gate/top-contact geometry are shown to achieve on/off ratios of >104 and mobilities as high as 0.35 cm2/Vs. These rival the characteristics of the best solution-processible small molecule FETs fabricated by other fabrication methods such as drop casting and ink-jet printing.

  9. Photoacoustic and dielectric spectroscopic studies of 4-dimethylamino-n-methyl-4-stilbazolium tosylate single crystal: An efficient terahertz emitter

    Science.gov (United States)

    Manivannan, M.; Martin Britto Dhas, S. A.; Jose, M.

    2016-12-01

    Bulk terahertz emitting single crystal of 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) was synthesized by condensation method and grown by slow solvent evaporation technique from methanol. The structure and cell parameters of the grown crystals were derived from single crystal and powder X-ray diffraction analyses and the optical properties of the crystal were analyzed by UV-Vis Spectrophotometer. The presence of functional groups was identified by FTIR and FT-Raman spectroscopic studies. We demonstrated that in DAST crystal, the thermal transport properties such as thermal conductivity, thermal diffusivity and thermal effusivity are better than several well recognized standard materials using photoacoustic spectrophotometer. The dielectric measurement was made as a function of frequency (1 Hz-35 MHz) at different temperatures (30-200 °C). The dielectric constant and dielectric loss were found to be strongly dependent on temperature and frequency of the applied electric field. The semicircle in the cole-cole plot showed the presence of dielectric relaxation in the crystal with its diameter representing the resistance of the crystal. The resistivity and ac conductivity were calculated from the measured dielectric data.

  10. Ester-free cross-linker molecules for ultraviolet-light-cured polysilsesquioxane gate dielectric layers of organic thin-film transistors

    Science.gov (United States)

    Okada, Shuichi; Nakahara, Yoshio; Uno, Kazuyuki; Tanaka, Ichiro

    2018-04-01

    Pentacene thin-film transistors (TFTs) were fabricated with ultraviolet-light (UV)-cured polysilsesquioxane (PSQ) gate dielectric layers using cross-linker molecules with or without ester groups. To polymerize PSQ without ester groups, thiol-ene reaction was adopted. The TFTs fabricated with PSQ layers comprising ester-free cross-linkers showed a higher carrier mobility than the TFTs with PSQ layers cross-linked with ester groups, which had large electric dipole moments that limited the carrier mobility. It was demonstrated that the thiol-ene reaction is more suitable than the conventional radical reaction for UV-cured PSQ with small dielectric constant.

  11. Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-09-10

    The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

  12. Influence of composition on structure, morphology and dielectric properties of BixAlyOz composite films synthesized by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Q. Qiao

    2017-04-01

    Full Text Available In this experiment we used atomic layer deposited Bi2O3 and Al2O3 films to fabricate the BixAlyOz nanocomposite films. Bismuth composition was modulated in a series of samples via altering the number of bismuth subsidiary cycles. We discovered that the bismuth composition in atomic percent did not monotonically increase with the rise of the number of bismuth cycles. To explain this unconventional variation trend we proposed a growth mechanism regarding the steric hindrance of Bi(thd3 and the diffusion of TMA. A single Debye-like relaxation can be determined for the BixAlyOz films with a parallel RC element to reflect it. The change in the dielectric response, such as dielectric constant and ac conductivity, was found to be in agreement with the variation of bismuth concentration. This could be attributed to the effect of 6s2 lone pair electrons in Bi-O dipoles. To further confirm the conductive strength, we estimated the optical band gap (Eg using plots of (αhν2 versus hν. The value of Eg would decrease from 5.62 eV to 5.00 eV as the bismuth content rises in the BixAlyOz films.

  13. Long range wetting transparency on top of layered metal dielectric substrates

    Science.gov (United States)

    2015-11-20

    and classical physics, involving electronic interactions and transitions in a broad range of frequencies, depend not only on the local dielectric...controlled by the vicinity of metamaterials and metallic surfaces and which do not always belong to the traditional domain of electrodynamics include

  14. High-k dielectrics on n-Al0.25Ga0.75N via atomic layer deposition

    Science.gov (United States)

    Nepal, N.; Garces, N. Y.; Meyer, D.; Anderson, T. J.; Hite, J. K.; Mastro, M. A.; Eddy, C. R., Jr.

    2012-02-01

    AlGaN/GaN and AlInN/GaN high-electron-mobility transistors (HEMTs) are promising devices for high-temperature and high-power electronics applications. A key issue with these devices is the high gate leakage current, particularly for enhancement-mode HEMTs. There has been an increased interest in developing high quality gate insulators to reduce gate leakage current. Al2O3 and HfO2 layers (21nm thick)were deposited via atomic layer deposition on n-Al0.25Ga0.75N pretreated with one of two different surface preparations, H2O2:H2SO4 (1:5) (piranha) or HF:H2O (1:3). Dielectrics were characterized using spectroscopic ellipsometry, X-ray photoelectron spectroscopy, atomic force microscopy (AFM), and capacitance-voltage (C-V) measurements. AFM shows that Al2O3 and HfO2 layers are continuous and uniform in thickness on both HF and piranha pretreated surfaces. However, C-V measurement shows smaller (15%) hysteresis for HF pretreated samples. The estimated dielectric constants (ɛ) are 9 and 18 for Al2O3 and HfO2 on HF pretreated surfaces, respectively, in general agreement with theoretical values of 9 and 25. Al2O3 layers on Al0.25Ga0.75N exhibited a lower leakage (7x10-8 A/cm^2 at 5 V) current and higher forward breakdown voltage of 7.5 MV/cm compared to that of HfO2 layer. The higher breakdown voltage and lower leakage current for Al2O3 is due to larger conduction band offset with Al0.25Ga0.75N.

  15. Several hundred-fold enhanced fluorescence from single fluorophores assembled on silver nanoparticle-dielectric-metal substrate.

    Science.gov (United States)

    Ray, Krishanu; Badugu, Ramachandram; Szmacinski, Henryk; Lakowicz, Joseph R

    2015-10-18

    We observed over 400-fold enhanced fluorescence from single Cy5 molecules assembled on multilayer silver nanoparticle-dielectric-metal (PDM) substrate. This substantial enhancement is due to the near-field enhanced excitation, emission, and interaction of Cy5 with plasmonic nanostructures. Experimental observation is supported by finite-element method calculations.

  16. Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

    KAUST Repository

    Shaikh, Parvez Abdul Ajij

    2016-08-16

    Schottky junctions formed between semiconductors and metal contacts are ubiquitous in modern electronic and optoelectronic devices. Here we report on the physical properties of Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single crystals. It is found that light illumination can significantly increase the dielectric constant of perovskite junctions by 2300%. Furthermore, such Pt/perovskite junctions are used to fabricate self-biased photodetectors. A photodetectivity of 1.4 × 1010 Jones is obtained at zero bias, which increases to 7.1 × 1011 Jones at a bias of +3 V, and the photodetectivity remains almost constant in a wide range of light intensity. These devices also exhibit fast responses with a rising time of 70 μs and a falling time of 150 μs. As a result of the high crystal quality and low defect density, such single-crystal photodetectors show stable performance after storage in air for over 45 days. Our results suggest that hybrid perovskite single crystals provide a new platform to develop promising optoelectronic applications. © 2016 The Royal Society of Chemistry.

  17. Electrowetting Performances of Novel Fluorinated Polymer Dielectric Layer Based on Poly(1H,1H,2H,2H-perfluoroctylmethacrylate Nanoemulsion

    Directory of Open Access Journals (Sweden)

    Jiaxin Hou

    2017-06-01

    Full Text Available In electrowetting devices, hydrophobic insulating layer, namely dielectric layer, is capable of reversibly switching surface wettability through applied electric field. It is critically important but limited by material defects in dielectricity, reversibility, film forming, adhesiveness, price and so on. To solve this key problem, we introduced a novel fluorinated polyacrylate—poly(1H,1H,2H,2H-perfluoroctylmethacrylate (PFMA to construct micron/submicron-scale dielectric layer via facile spray coating of nanoemulsion for replacing the most common Teflon AF series. All the results illustrated that, continuous and dense PFMA film with surface relief less than 20 nm was one-step fabricated at 110 °C, and exhibited much higher static water contact angle of 124°, contact angle variation of 42°, dielectric constant of about 2.6, and breakdown voltage of 210 V than Teflon AF 1600. Particularly, soft and highly compatible polyacrylate mainchain assigned five times much better adhesiveness than common adhesive tape, to PFMA layer. As a promising option, PFMA dielectric layer may further facilitate tremendous development of electrowetting performances and applications.

  18. Dielectric barrier discharges: progress on plasma sources and on the understanding of regimes and single filaments

    Science.gov (United States)

    Brandenburg, Ronny

    2017-05-01

    Dielectric barrier discharges (DBDs) are plasmas generated in configurations with an insulating (dielectric) material between the electrodes which is responsible for a self-pulsing operation. DBDs are a typical example of nonthermal atmospheric or normal pressure gas discharges. Initially used for the generation of ozone, they have opened up many other fields of application. Therefore DBDs are a relevant tool in current plasma technology as well as an object for fundamental studies. Another motivation for further research is the fact that so-called partial discharges in insulated high voltage systems are special types of DBDs. The breakdown processes, the formation of structures, and the role of surface processes are currently under investigation. This review is intended to give an update to the already existing literature on DBDs considering the research and development within the last two decades. The main principles and different modes of discharge generation are summarized. A collection of known as well as special electrode configurations and reactor designs will be presented. This shall demonstrate the different and broad possibilities, but also the similarities and common aspects of devices for different fields of applications explored within the last years. The main part is devoted to the progress on the investigation of different aspects of breakdown and plasma formation with the focus on single filaments or microdischarges. This includes a summary of the current knowledge on the electrical characterization of filamentary DBDs. In particular, the recent new insights on the elementary volume and surface memory mechanisms in these discharges will be discussed. An outlook for the forthcoming challenges on research and development will be given.

  19. Dielectric properties and resistance to fatigue failure of different barrier layers prepared on flexible stainless-steel foils by ion-beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yu-qiong [National Microgravity Laboratory (NML), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); School of Optoelectronics, Beijing Institute of Technology, Beijing 100081 (China); Yu, Zhi-nong, E-mail: znyu@bit.edu.cn [School of Optoelectronics, Beijing Institute of Technology, Beijing 100081 (China); Leng, Jian [Tianjin Key Laboratory of Optical Thin Films, Tianjin Jinhang Institute of Technical Physics, Tianjin 300192 (China); Wang, Hua-qing [Optical Thin Film Center, Daheng New Epoch Technology Inc., Beijing 100070 (China); Chen, She; Dong, Yu-hui [National Microgravity Laboratory (NML), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Jin, Gang, E-mail: gajin@imech.ac.cn [National Microgravity Laboratory (NML), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China)

    2012-08-31

    A stainless-steel foil is an attractive candidate for the substrate of flexible display devices and integrated solar modules. For electrical insulation and ion diffusion reduction, a barrier layer should be coated on the stainless-steel foil surface. In this study, different barrier layers such as SiO{sub x}, TaO{sub x}, TiO{sub x} and TaO{sub x}/SiO{sub x} were prepared on the flexible stainless-steel foils (SUS 304) by ion-beam assisted deposition. The dielectric properties of the barrier layers, including resistance, reactance, leakage current density, breakdown field strength and performance index, were investigated. The resistance to fatigue failure of the barrier layers was evaluated by insulating tests after the specimen foils were flattened. The results show that the dielectric properties and the resistance to fatigue failure of the TaO{sub x}/SiO{sub x} composite barrier layer are better than those of the SiO{sub x} or the TaO{sub x} barrier layer. The best dielectric properties and resistance to fatigue failure are achieved with the 4-{mu}m thick TaO{sub x}/SiO{sub x} composite barrier layer. - Highlights: Black-Right-Pointing-Pointer SiO{sub x}, TaO{sub x}, TiO{sub x} and TaO{sub x}/SiO{sub x} barrier layers are prepared on stainless-steel. Black-Right-Pointing-Pointer Barriers layers prepared by ion-beam assisted deposition. Black-Right-Pointing-Pointer Dielectric properties and resistance to fatigue failure performance are compared. Black-Right-Pointing-Pointer 4-{mu}m thick TaO{sub x}/SiO{sub x} layers show good dielectric properties and resistance to fatigue failure.

  20. Enhancement of Faraday effect in one-dimensional magneto-optical photonic crystal including a magnetic layer with wavelength dependent off-diagonal elements of dielectric constant tensor

    International Nuclear Information System (INIS)

    Inui, Chie; Ozaki, Shinsuke; Kura, Hiroaki; Sato, Tetsuya

    2011-01-01

    Optical and magneto-optical properties of one-dimensional magneto-optical photonic crystal (1-D MPC) prepared by the sol-gel dip-coating method, including a magnetic defect layer composed of mixture of CoFe 2 O 4 and SiO 2 , are investigated from both the experimental and theoretical standpoints. The resonant transmission of light was observed around 570 nm in the photonic band gap. The Faraday rotation angle θ F showed two maxima at 490 and 640 nm, and the wavelength dependence of θ F above 760 nm was similar to that of the CoFe 2 O 4 +SiO 2 single-layer film. The two maxima of θ F are attributed to the enhanced Faraday rotation of nonmagnetic TiO 2 layers in the cavity structure and that in magnetic CoFe 2 O 4 +SiO 2 layer through the light localization in MPC. The maximum value of θ F due to the magnetic CoFe 2 O 4 +SiO 2 layer in the MPC was 22-times larger than that in the single-layer film. The simulation study of MPC with CoFe 2 O 4 +SiO 2 magnetic defect layer, based on the matrix approach method, showed that the resonant light transmission was accompanied by the localization of electric field, and large enhancement of θ F appeared at different wavelengths so as to agree with the experimental features. This can be explained in terms of the wavelength dependent off-diagonal components of the dielectric constant tensor in addition to the large extinction coefficient in the CoFe 2 O 4 +SiO 2 magnetic defect layer. - Highlights: → 1-D magnetic photonic crystal (MPC) prepared by sol-gel method. → Enhancement of Faraday rotation due to the magnetic defect layer of CoFe 2 O 4 . → Shift of wavelength of Faraday rotation maximum from resonant light transmission.

  1. Competing effects of silanol surface concentration and solvent dielectric constant on electrostatic layer-by-layer assembly of silica nanoparticles on gold.

    Science.gov (United States)

    Yang, Ruidong; Wang, Feng; Blunk, Richard H; Angelopoulos, Anastasios P

    2010-09-01

    Two types of silica nanoparticles having differing concentrations of ionizable surface groups are used to investigate the interplay between nanoparticle surface charge and solvent dielectric constant in nanostructure development during layer-by-layer assembly with a cationic polyacrylamide. Zeta (zeta) potential measurements are used to determine the extent of silanol dissociation with pH. For 19-nm-diameter X-Tec 3408 silica nanoparticles from Nano-X GmbH (NanoX), complete dissociation yields a zeta-potential value of about -44mV and occurs between pH 5 and 6 in 50% ethanol-in-water mixture by volume. By contrast, 65-nm-diameter polishing silica from Electron Microscopy Supply (EMS) has a zeta potential that does not equilibrate even up to pH 7 with a value of -59mV under otherwise similar solution conditions. The more negative zeta potential at a given pH is found to substantially reduce nanoparticle adsorption. This behavior is opposite that observed when the dielectric constant of the suspension is decreased, independent of particle size. Nanoparticle surface chemical heterogeneity is discussed as a plausible explanation for such seriously discrepant behavior and the effects on multilayer electrical contact resistance for proton-exchange membrane (PEM) fuel-cell coating applications are presented. Copyright 2010 Elsevier Inc. All rights reserved.

  2. Bandgap tunability at single-layer molybdenum disulphide grain boundaries

    KAUST Repository

    Huang, Yu Li

    2015-02-17

    Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40±0.05 eV for single-layer, 2.10±0.05 eV for bilayer and 1.75±0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85±0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.

  3. Single-layer closure of typhoid enteric perforation: Our experience ...

    African Journals Online (AJOL)

    Materials and Methods: We retrospectively studied the effects of single versus double layer intestinal closure after typhoid enteric perforation with peritonitis in 902 pediatric patients from September 2007 to April 2012. All the patients underwent laparotomy after resuscitation and antibiotic cover. The patients were divided ...

  4. Kernel Function Tuning for Single-Layer Neural Networks

    Czech Academy of Sciences Publication Activity Database

    Vidnerová, Petra; Neruda, Roman

    -, accepted 28.11. 2017 (2018) ISSN 2278-0149 R&D Projects: GA ČR GA15-18108S Institutional support: RVO:67985807 Keywords : single-layer neural networks * kernel methods * kernel function * optimisation Subject RIV: IN - Informatics, Computer Science http://www.ijmerr.com/

  5. Dielectric sample with two-layer charge distribution for space charge calibration purposes

    DEFF Research Database (Denmark)

    Holbøll, Joachim; Henriksen, Mogens; Rasmussen, C.

    2002-01-01

    In the present paper is described a dielectric test sample with two very narrow concentrations of bulk charges, achieved by two internal electrodes not affecting the acoustical properties of the sample, a fact important for optimal application of most space charge measuring systems. Space charge...... formation was investigated under different electrical conditions by means of the laser induced pressure pulse (LIPP) method and the pulsed electro-acoustic method (PEA)....

  6. 2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

    Energy Technology Data Exchange (ETDEWEB)

    García, H., E-mail: hecgar@ele.uva.es [Departamento de Electricidad y Electrónica, ETSI Telecomunicación, Universidad de Valladolid, 47011 Valladolid (Spain); Castán, H.; Dueñas, S.; Bailón, L. [Departamento de Electricidad y Electrónica, ETSI Telecomunicación, Universidad de Valladolid, 47011 Valladolid (Spain); Campabadal, F.; Rafí, J.M.; Zabala, M.; Beldarrain, O. [Institut de Microelectrònica de Barcelona (IMB-CNM), CSIC, Campus UAB, 08193 Bellaterra (Spain); Ohyama, H.; Takakura, K.; Tsunoda, I. [Department of Electronic Engineering, Kumamoto National College of Technology, Kumamoto 861-1102 (Japan)

    2013-05-01

    2 MeV electron irradiation effects on the electrical properties of Al{sub 2}O{sub 3} and HfO{sub 2}-based metal–insulator–semiconductor capacitors have been studied. High-k dielectrics were directly grown on silicon by atomic layer deposition. Capacitors were exposed to three different electron irradiation doses of 0.025, 0.25 and 2.5 MGy. Capacitance–voltage, deep-level transient spectroscopy, conductance transients, flat-band voltage transients and current–voltage techniques were used to characterize the defects induced or activated by irradiation on the dielectric bulk and on the interface with silicon substrate. In all cases, positive charge is trapped in the dielectric bulk after irradiation indicating the existence of hole traps in the dielectric. When the samples are exposed to 2 MeV electron beam (e-beam) irradiation, electron–hole pairs are created and holes are then captured by the hole traps. Insulator/semiconductor interface quality slightly improves for low irradiation doses, but it is degraded for high doses. Irradiation always degrades the dielectric layers in terms of gate leakage current: the trapped holes are mobile charge which can contribute to leakage current by hopping from trap to trap. - Highlights: ► Positive charge accumulates inside dielectrics after electron irradiation. ► Irradiation improves oxide/semiconductor interface for low doses. ► Irradiation increases gate leakage current.

  7. Dielectric anomaly and relaxation natures in a Zn-Cr pillar−layered metal−organic framework with cages and channels

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Chen; Yao, Zhi-Yuan; Liu, Shao-Xian; Luo, Hong-Bin [State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry & Molecular Engineering, Nanjing Tech University, Nanjing 210009 (China); Zou, Yang, E-mail: zouyang@njtech.edu.cn [State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry & Molecular Engineering, Nanjing Tech University, Nanjing 210009 (China); Li, Li [State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry & Molecular Engineering, Nanjing Tech University, Nanjing 210009 (China); Ren, Xiao-Ming, E-mail: xmren@njtech.edu.cn [State Key Laboratory of Materials-Oriented Chemical Engineering and College of Chemistry & Molecular Engineering, Nanjing Tech University, Nanjing 210009 (China); College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009 (China); State Key Laboratory of Coordination Chemistry, Nanjing University, Nanjing 210093 (China)

    2017-06-15

    A bimetallic metal–organic framework (MOF) with the formula [Zn{sub 3}btc{sub 2}(Cr{sub 3}O(isonic){sub 6}(H{sub 2}O){sub 2}(OH))]·(DMF){sub 15.5}(H{sub 2}O){sub 8} (H{sub 3}btc=1,3,5-benzenetricarboxylic acid; isonic=isonicotinicate) shows a pillar-layered structure. The monolayer consists of hexagon-like rings formed by the [Zn(isonic){sub 2}(btc){sub 2}] tetrahedral and the consecutive monolayers are pillared by trigonal–prismatic clusters of [Cr{sub 3}O(isonic){sub 6}(H{sub 2}O){sub 2}(OH)]through the remaining binding sites of the Zn{sup 2+} ions. DMF and water molecules are confined in the cages and channels. TGA indicates that the lattice DMF and water molecules begin to be released at temperatures above 363 K. Dielectric measurements were carried out in the range of 173–363 K and 1–10{sup 7} Hz for three successive thermal cycles. The dielectric spectroscopy obtained in the first thermal cycle was different from that observed in the next two thermal cycles, while the dielectric spectra in the last two thermal cycles were almost identical. The dielectric nature of this MOF is discussed in detail for each thermal cycle. Since MOFs are unique host–guest systems in which the structure of the host framework is designable and the guests are exchangeable, it is no doubt those MOFs are materials with a variety of dielectric natures. This study gives a fresh impetus to achieve MOFs–based dielectric materials. - Graphical abstract: The bimetallic MOF [Zn{sub 3}btc{sub 2}(Cr{sub 3}O(isonic){sub 6}(H{sub 2}O){sub 2}(OH))]·(DMF){sub 15.5}(H{sub 2}O){sub 8}1, shows a pillar-layered open-framework structure. The dielectric spectra of 1 are almost identical in the last two thermal cycles, whereas significantly different from that observed in the first thermal cycle. The novel dielectric anomaly associated with a stacked structure transformation of the disordered guests. - Highlights: • A bimetallic metal-organic framework shows a pillar-layered structure.

  8. Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition.

    Science.gov (United States)

    Liang, Junsheng; Li, Pengfei; Wang, Dazhi; Fang, Xu; Ding, Jiahong; Wu, Junxiong; Tang, Chang

    2016-01-19

    Dense and crack-free barium titanate (BaTiO₃, BTO) thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet) deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.

  9. Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition

    Directory of Open Access Journals (Sweden)

    Junsheng Liang

    2016-01-01

    Full Text Available Dense and crack-free barium titanate (BaTiO3, BTO thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.

  10. Impact of Gd2O3 passivation layer on interfacial and electrical properties of atomic-layer-deposited ZrO2 gate dielectric on GaAs

    Science.gov (United States)

    Gong, Youpin; Zhai, Haifa; Liu, Xiaojie; Kong, Jizhou; Wu, Di; Li, Aidong

    2014-02-01

    ZrO2 gate dielectric films were fabricated on n-GaAs substrates by atomic layer deposition (ALD), using metal organic chemical vapor deposition (MOCVD)-derived ultrathin Gd2O3 film as interfacial control layer between ZrO2 and n-GaAs. The interfacial structure, capacitance-voltage and current-voltage properties of ZrO2/n-GaAs and ZrO2/Gd2O3/n-GaAs metal-oxide-semiconductor (MOS) capacitors have been investigated. The introduction of an ultrathin Gd2O3 control layer can effectively suppress the formation of As oxides and high valence Ga oxide at the high k/GaAs interface which evidently improved the electrical properties of GaAs-based MOS capacitors, such as higher accumulation capacitance and lower leakage current density. It was found that the current conduction mechanism of MOS capacitors varied from Poole-Frenkel emission to Schottky-Richardson emission after introducing the thin Gd2O3 layer. The band alignments of interfaces for ZrO2/GaAs and ZrO2/Gd2O3/GaAs were established, which indicates that the conduction band offset (CBO) for ZrO2/GaAs and ZrO2/Gd2O3/GaAs stacks are ˜1.45 and ˜1.62 eV, correspondingly.

  11. Single-mode theory of diffusive layers in thermohaline convection

    Science.gov (United States)

    Gough, D. O.; Toomre, J.

    1982-01-01

    A two-layer configuration of thermohaline convection is studied, with the principal aim of explaining the observed independence of the buoyancy-flux ratio on the stability parameter when the latter is large. Temperature is destabilizing and salinity is stabilizing, so diffusive interfaces separate the convecting layers. The convection is treated in the single-mode approximation, with a prescribed horizontal planform and wavenumber. Surveys of numerical solutions are presented for a selection of Rayleigh numbers R, stability parameters lambda and horizontal wavenumbers. The solutions yield a buoyancy flux ratio chi that is insensitive to lambda, in accord with laboratory experiments. However chi increases with increasing R, in contradiction to laboratory observations.

  12. Thermoelectric properties of single-layered SnSe sheet

    Science.gov (United States)

    Wang, Fancy Qian; Zhang, Shunhong; Yu, Jiabing; Wang, Qian

    2015-09-01

    Motivated by the recent study of inspiring thermoelectric properties in bulk SnSe [Zhao et al., Nature, 2014, 508, 373] and the experimental synthesis of SnSe sheets [Chen et al., J. Am. Chem. Soc., 2013, 135, 1213], we have carried out systematic calculations for a single-layered SnSe sheet focusing on its stability, electronic structure and thermoelectric properties by using density functional theory combined with Boltzmann transport theory. We have found that the sheet is dynamically and thermally stable with a band gap of 1.28 eV, and the figure of merit (ZT) reaches 3.27 (2.76) along the armchair (zigzag) direction with optimal n-type carrier concentration, which is enhanced nearly 7 times compared to its bulk counterpart at 700 K due to quantum confinement effect. Furthermore, we designed four types of thermoelectric couples by assembling single-layered SnSe sheets with different transport directions and doping types, and found that their efficiencies are all above 13%, which are higher than those of thermoelectric couples made of commercial bulk Bi2Te3 (7%-8%), suggesting the great potential of single-layered SnSe sheets for heat-electricity conversion.Motivated by the recent study of inspiring thermoelectric properties in bulk SnSe [Zhao et al., Nature, 2014, 508, 373] and the experimental synthesis of SnSe sheets [Chen et al., J. Am. Chem. Soc., 2013, 135, 1213], we have carried out systematic calculations for a single-layered SnSe sheet focusing on its stability, electronic structure and thermoelectric properties by using density functional theory combined with Boltzmann transport theory. We have found that the sheet is dynamically and thermally stable with a band gap of 1.28 eV, and the figure of merit (ZT) reaches 3.27 (2.76) along the armchair (zigzag) direction with optimal n-type carrier concentration, which is enhanced nearly 7 times compared to its bulk counterpart at 700 K due to quantum confinement effect. Furthermore, we designed four types of

  13. AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

    Science.gov (United States)

    Bi, Zhi-Wei; Feng, Qian; Hao, Yue; Wang, Dang-Hui; Ma, Xiao-Hua; Zhang, Jin-Cheng; Quan, Si; Xu, Sheng-Rui

    2010-07-01

    We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD). Surface morphology of samples are observed by atomic force microscopy (AFM), indicating that the ALD NbAlO has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance-voltage (C-V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN. The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.

  14. AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Zhi-Wei, Bi; Qian, Feng; Yue, Hao; Xiao-Hua, Ma; Jin-Cheng, Zhang; Si, Quan; Sheng-Rui, Xu; Dang-Hui, Wang

    2010-01-01

    We present an AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD). Surface morphology of samples are observed by atomic force microscopy (AFM), indicating that the ALD NbAlO has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance–voltage (C–V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN. The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Exploring single-layered SnSe honeycomb polymorphs for optoelectronic and photovoltaic applications

    Science.gov (United States)

    Ul Haq, Bakhtiar; AlFaify, S.; Ahmed, R.; Butt, Faheem K.; Laref, A.; Shkir, Mohd.

    2018-02-01

    Single-layered tin selenide that shares the same structure with phosphorene and possesses intriguing optoelectronic properties has received great interest as a two-dimensional material beyond graphene and phosphorene. Herein, we explore the optoelectronic response of the newly discovered stable honeycomb derivatives (such as α , β , γ , δ , and ɛ ) of single-layered SnSe in the framework of density functional theory. The α , β , γ , and δ derivatives of a SnSe monolayer have been found to exhibit an indirect band gap, however, the dispersion of their band-gap edges demonstrates multiple direct band gaps at a relatively high energy. The ɛ -SnSe, however, features an intrinsic direct band gap at the high-symmetry Γ point. Their energy band gaps (0.53, 2.32, 1.52, 1.56, and 1.76 eV for α -, β -, γ -, δ -, and ɛ -SnSe, respectively), calculated at the level of the Tran-Blaha modified Becke-Johnson approach, mostly fall right in the visible range of the electromagnetic spectrum and are in good agreement with the available literature. The optical spectra of these two-dimensional (2D) SnSe polymorphs (besides β -SnSe) are highly anisotropic and possess strictly different optical band gaps along independent diagonal components. They show high absorption in the visible and UV ranges. Similarly, the reflectivity, refraction, and optical conductivities inherit strong anisotropy from the dielectric functions as well and are highly visible-UV polarized along the cartesian coordinates, showing them to be suitable for optical filters, polarizers, and shields against UV radiation. Our investigations suggest these single-layered SnSe allotropes as a promising 2D material for next-generation nanoscale optoelectronic and photovoltaic applications beyond graphene and phosphorene.

  16. Thermoelectric Response in Single Quintuple Layer Bi2Te3

    KAUST Repository

    Sharma, S.

    2016-10-05

    Because Bi2Te3 belongs to the most important thermoelectric materials, the successful exfoliation of a single quintuple layer has opened access to an interesting two-dimensional material. For this reason, we study the thermoelectric properties of single quintuple layer Bi2Te3 by considering both the electron and phonon transport. On the basis of first-principles density functional theory, the electronic and phononic contributions are calculated by solving Boltzmann transport equations. The dependence of the lattice thermal conductivity on the phonon mean free path is evaluated along with the contributions of the acoustic and optical branches. We find that the thermoelectric response is significantly better for p- than for n-doping. By optimizing the carrier concentration, at 300 K, a ZT value of 0.77 is achieved, which increases to 2.42 at 700 K.

  17. Optofluidic lasers with a single molecular layer of gain

    Science.gov (United States)

    Chen, Qiushu; Ritt, Michael; Sivaramakrishnan, Sivaraj; Sun, Yuze; Fan, Xudong

    2014-01-01

    We achieve optofluidic lasers with a single molecular layer of gain, in which green fluorescent protein, dye-labeled bovine serum albumin, and dye-labeled DNA are respectively used as the gain medium and attached to the surface of a ring resonator via surface immobilization biochemical methods. It is estimated that the surface density of the gain molecules is on the order of 1012/cm2, sufficient for lasing under pulsed optical excitation. It is further shown that the optofluidic laser can be tuned by energy transfer mechanisms through biomolecular interactions. This work not only opens a door to novel photonic devices that can be controlled at the level of a single molecular layer, but also provides a promising sensing platform to analyze biochemical processes at the solid-liquid interface. PMID:25312306

  18. Effect of H + ion implantation on structural, morphological, optical and dielectric properties of L-arginine monohydrochloride monohydrate single crystals

    Science.gov (United States)

    Sangeetha, K.; Babu, R. Ramesh; Kumar, P.; Bhagvannarayana, G.; Ramamurthi, K.

    2011-06-01

    L-arginine monohydrochloride monohydrate (LAHCl) single crystals have been implanted with 100 keV H + ions at different ion fluence ranging from 10 12 to 10 15 ions/cm 2. Implanted LAHCl single crystals have been investigated for property changes. Crystal surface and crystalline perfection of the pristine and implanted crystals were analyzed by atomic force microscope and high-resolution X-ray diffraction studies, respectively. Optical absorption bands induced by colour centers, refractive index and birefringence, mechanical stability and dielectric constant of implanted crystals were studied at different ion fluence and compared with that of pristine LAHCl single crystal.

  19. Numerical test for single concrete armour layer on breakwaters

    OpenAIRE

    Anastasaki, E; Latham, J-P; Xiang, J

    2016-01-01

    The ability of concrete armour units for breakwaters to interlock and form an integral single layer is important for withstanding severe wave conditions. In reality, displacements take place under wave loading, whether they are small and insignificant or large and representing serious structural damage. In this work, a code that combines finite- and discrete-element methods which can simulate motion and interaction among units was used to conduct a numerical investigation. Various concrete ar...

  20. Raman spectroscopy of boron-doped single-layer graphene.

    Science.gov (United States)

    Kim, Yoong Ahm; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Fujimori, Toshihiko; Kaneko, Katsumi; Terrones, Mauricio; Behrends, Jan; Eckmann, Axel; Casiraghi, Cinzia; Novoselov, Kostya S; Saito, Riichiro; Dresselhaus, Mildred S

    2012-07-24

    The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was ~0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon-boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.

  1. Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates.

    Science.gov (United States)

    Chen, Jianyi; Guo, Yunlong; Jiang, Lili; Xu, Zhiping; Huang, Liping; Xue, Yunzhou; Geng, Dechao; Wu, Bin; Hu, Wenping; Yu, Gui; Liu, Yunqi

    2014-03-05

    By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 μm. The carrier mobility can reach about 5650 cm(2) V(-1) s(-1) , which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates.

    Science.gov (United States)

    Lee, Seung Min; Yum, Jung Hwan; Yoon, Seonno; Larsen, Eric S; Lee, Woo Chul; Kim, Seong Keun; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Bielawski, Christopher W; Oh, Jungwoo

    2017-12-06

    We have grown a single-crystal beryllium oxide (BeO) thin film on a gallium nitride (GaN) substrate by atomic-layer deposition (ALD) for the first time. BeO has a higher thermal conductivity, bandgap energy, and dielectric constant than SiO 2 . As an electrical insulator, diamond is the only material on earth whose thermal conductivity exceeds that of BeO. Despite these advantages, there is no chemical-vapor-deposition technique for BeO-thin-film deposition, and thus, it is not used in nanoscale-semiconductor-device processing. In this study, the BeO thin films grown on a GaN substrate with a single crystal showed excellent interface and thermal stability. Transmission electron microscopy showed clear diffraction patterns, and the Raman shifts associated with soft phonon modes verified the high thermal conductivity. The X-ray scan confirmed the out-of-plane single-crystal growth direction and the in-plane, 6-fold, symmetrical wurtzite structure. Single-crystalline BeO was grown on GaN despite the large lattice mismatch, which suggested a model that accommodated the strain of hexagonal-on-hexagonal epitaxy with 5/6 and 6/7 domain matching. BeO has a good dielectric constant and good thermal conductivity, bandgap energy, and single-crystal characteristics, so it is suitable for the gate dielectric of power semiconductor devices. The capacitance-voltage (C-V) results of BeO on a GaN-metal-oxide semiconductor exhibited low frequency dispersion, hysteresis, and interface-defect density.

  3. Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

    Energy Technology Data Exchange (ETDEWEB)

    Tiriolo, Raffaele [Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Rangnekar, Neel [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Zhang, Han [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Shete, Meera [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Bai, Peng [Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA; Nelson, John [Characterization Facility, University of Minnesota, 12 Shepherd Labs, 100 Union St. S.E. Minneapolis MN 55455 USA; Karapetrova, Evguenia [Surface Scattering and Microdiffraction, X-ray Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Building 438-D002 Argonne IL 60439 USA; Macosko, Christopher W. [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Siepmann, Joern Ilja [Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA; Lamanna, Ernesto [Department of Health Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Lavano, Angelo [Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Tsapatsis, Michael [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA

    2017-05-08

    A low-temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low-k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b-oriented film of the pure-silica zeolite MFI (silicalite-1) supported on a gold-coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in-plane growth. The traditional calcination process is replaced with a non-thermal photochemical activation to ensure preservation of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal-insulator-metal configuration, highlights the ultralow k approximate to 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E approximate to 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.

  4. Three-dimensional periodic dielectric structures having photonic Dirac points

    Science.gov (United States)

    Bravo-Abad, Jorge; Joannopoulos, John D.; Soljacic, Marin

    2015-06-02

    The dielectric, three-dimensional photonic materials disclosed herein feature Dirac-like dispersion in quasi-two-dimensional systems. Embodiments include a face-centered cubic (fcc) structure formed by alternating layers of dielectric rods and dielectric slabs patterned with holes on respective triangular lattices. This fcc structure also includes a defect layer, which may comprise either dielectric rods or a dielectric slab with patterned with holes. This defect layer introduces Dirac cone dispersion into the fcc structure's photonic band structure. Examples of these fcc structures enable enhancement of the spontaneous emission coupling efficiency (the .beta.-factor) over large areas, contrary to the conventional wisdom that the .beta.-factor degrades as the system's size increases. These results enable large-area, low-threshold lasers; single-photon sources; quantum information processing devices; and energy harvesting systems.

  5. Growth, Optical, Dielectric and Ferroelectric Properties of Non-Linear Optical Single Crystal: Glycine-Phthalic Acid

    Science.gov (United States)

    Suresh, Sagadevan

    2016-11-01

    Single crystals of glycine-phthalic acid (GPA) were grown by slow evaporation process using aqueous solution. X-ray diffraction analysis was used to examine its cell structure and it was found that the GPA crystal corresponded to the orthorhombic system. To identify absorption range and cut-off wavelength for the GPA crystal, UV-visible spectrum was recorded. UV-visible spectroscopy was used to study the optical constants such as the refractive index, the extinction coefficient, electrical susceptibility, and optical conductivity. As a function of different frequencies and temperatures, the dielectric constant and the dielectric loss were examined. The electrical properties like plasma energy, Penn gap, Fermi energy, and polarizability were determined for the analysis of the second harmonic generation (SHG). Using the Kurtz powder technique, the SHG of the GPA crystal was studied. Investigations relating to hysteresis were carried out to ascertain the ferroelectric nature of the material.

  6. Hydrogen bond network in the hydration layer of the water confined in nanotubes increasing the dielectric constant parallel along the nanotube axis.

    Science.gov (United States)

    Qi, Wenpeng; Zhao, Hongwei

    2015-09-21

    The water confined in nanotubes has been extensively studied, because of the potential usages in drug delivery and desalination. The radial distribution of the dielectric constant parallel along the nanotube axis was obtained by molecular dynamics simulations in a carbon nanotube and a nanotube with a very small van der Waals potential. The confined water was divided into two parts, the middle part water and the hydration water. In both cases, the hydrogen bond orientation of the middle water is isotropic, while the hydrogen bonds in hydration layers are apt to parallel along the nanotube axis. Therefore, the hydration water has higher dipole correlations increasing the dielectric constant along the nanotube axis.

  7. Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Koo, Jae Bon; Lim, Jung Wook; Kim, Seong Hyun; Yun, Sun Jin; Ku, Chan Hoe; Lim, Sang Chul; Lee, Jung Hun

    2007-01-01

    The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al 2 O 3 dielectric are reported. Saturation mobility of 0.38 cm 2 /V s, threshold voltage of 1 V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 10 8 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al 2 O 3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to - 5 V at supply voltage of - 5 V

  8. Effect of gradient dielectric coefficient in a functionally graded material (FGM) substrate on the propagation behavior of love waves in an FGM-piezoelectric layered structure.

    Science.gov (United States)

    Cao, Xiaoshan; Shi, Junping; Jin, Feng

    2012-06-01

    The propagation behavior of Love waves in a layered structure that includes a functionally graded material (FGM) substrate carrying a piezoelectric thin film is investigated. Analytical solutions are obtained for both constant and gradient dielectric coefficients in the FGM substrate. Numerical results show that the gradient dielectric coefficient decreases phase velocity in any mode, and the electromechanical coupling factor significantly increases in the first- and secondorder modes. In some modes, the difference in Love waves' phase velocity between these two types of structure might be more than 1%, resulting in significant differences in frequency of the surface acoustic wave devices.

  9. Sensitivity of imaging properties of metal-dielectric layered flat lens to fabrication inaccuracies

    DEFF Research Database (Denmark)

    Kotynski, R.; Baghdasaryan, H.; Stefaniuk, T.

    2010-01-01

    We characterize the sensitivity of imaging properties of a layered silver-TiO2 flat lens to fabrication inaccuracies. The lens is designed for approximately diffraction-free imaging with subwavelength resolution at distances in the order of a wavelength. Its operation may be attributed to self-co...

  10. Study of dielectric and ferroelectric properties of five-layer Aurivillius ...

    Indian Academy of Sciences (India)

    layer Aurivillius oxides. (Ba2Bi4Ti5O18, Pb2Bi4Ti5O18 and Sr2Bi4Ti5O18) prepared by a solution combustion route with glycine as a fuel at low calcination temperature. The phase formation of these materials with pseudo-tetragonal structure was ...

  11. Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films

    NARCIS (Netherlands)

    Jinesh, K. B.; van Hemmen, J. L.; M. C. M. van de Sanden,; Roozeboom, F.; Klootwijk, J. H.; Besling, W. F. A.; Kessels, W. M. M.

    2011-01-01

    A comparative electrical characterization study of aluminum oxide (Al2O3) deposited by thermal and plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented. Capacitance and leakage current measurements show that the Al2O3 deposited by the plasma-assisted ALD shows excellent

  12. Physical and electrical properties of atomic layer deposited HfO{sub 2} for gate dielectric application

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Y. B.; Kang, M. S.; Choi, D. K.; Lee, T.; Ahn, J. [Hanyang Univ., Seoul (Korea, Republic of)

    2003-04-01

    Hafnium oxide films deposited on thermally grown SiON film and hydrogen-terminated Si bare substrate by an atomic layer deposition technique have been investigated. Capacitance-voltage measurements show an equivalent oxide thickness of about 1.79 nm for a 4.2 nm HfO{sub 2}/SiON stack capacitor and of about 1.84 nm for a 5.2 HfO{sub 2} single layer capacitor, and a permittivity of 18.1 for the HfO{sub 2} in stack capacitor and of 11.2 for HfO{sub 2} single layer capacitor. TEM showed that the interface of the stack capacitor can be stable at least 850 .deg. C.

  13. Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density

    Science.gov (United States)

    Park, Jaehoo; Cho, Moonju; Kim, Seong Keun; Park, Tae Joo; Lee, Suk Woo; Hong, Sug Hun; Hwang, Cheol Seong

    2005-03-01

    The influence of the ozone concentration (160-370g/m3) during atomic layer deposition of HfO2-gate dielectrics on the dielectric performance of the films grown on Si was studied. Although ozone was effective in reducing the impurity concentration in the film compared to H2O, the higher concentration slightly deteriorated the dielectric performance. More importantly, the degradation in the interface trap property with increasing post-annealing temperature became more serious as the ozone concentration increased. Investigation of the interface states using x-ray photoelectron spectroscopy revealed that the excessive oxygen incorporated during the film growth made the interfacial sub-oxide species (SiO, Si2O3, and silicate) and SiO2 coordinate more with oxygen. This increased the interface trap density and degraded the interface properties.

  14. Studies of plasmonic hot-spot translation by a metal-dielectric layered superlens

    DEFF Research Database (Denmark)

    Thoreson, Mark D.; Nielsen, Rasmus Bundgaard; West, Paul R.

    2011-01-01

    We have studied the ability of a lamellar near-field superlens to transfer an enhanced electromagnetic field to the far side of the lens. In this work, we have experimentally and numerically investigated superlensing in the visible range. By using the resonant hot-spot field enhancements from...... optical nanoantennas as sources, we investigated the translation of these sources to the far side of a layered silver-silica superlens operating in the canalization regime. Using near-field scanning optical microscopy (NSOM), we have observed evidence of superlens-enabled enhanced-field translation...... at a wavelength of about 680 nm. Specifically, we discuss our recent experimental and simulation results on the translation of hot spots using a silver-silica layered superlens design. We compare the experimental results with our numerical simulations and discuss the perspectives and limitations of our approach....

  15. Single-layer and integrated YBCO gradiometer coupled SQUIDs

    Energy Technology Data Exchange (ETDEWEB)

    Baer, L.R.; Daalmans, G.M.; Barthel, K.H.; Ferchland, L.; Selent, M.; Kuehnl, M.; Uhl, D. [Siemens AG, Central Research and Development, Paul-Gossen-Strasse 100, D-91052 Erlangen (Germany)

    1996-04-01

    For many SQUID applications such as biomagnetism or non-destructive evaluation it is convenient or even necessary to work without the restrictions of a magnetically shielded room. This contribution deals with two sensors appropriate for this purpose. In the first concept we present a flip chip arrangement of a single-layer flux transformer and a single-layer SQUID, taking advantage of a simple technology. The SQUID was prepared on a 15x15 mm{sup 2} SrTiO{sub 3} 24 deg. bicrystal and located in the common line of two-parallel-loop arrangements. The flipped antenna was designed as a two-parallel-loop gradiometer with 26 mm baseline on a 10x40 mm{sup 2} LaAlO{sub 3} single-crystal substrate. A field gradient sensitivity of 1 nT cm{sup -1}{phi}{sub 0} was obtained. We could demonstrate a field gradient resolution of 20 fT cm{sup -1} Hz{sup 1/2} at 1 kHz in an unshielded environment. In the second concept we integrated both the flux antenna and the SQUID on a SrTiO{sub 3} bicrystal. The tighter coupling scheme results in smaller devices for similar field gradient sensitivities. The integrated SQUID is designed as a 3x8 mm{sup 2} device on a 10x10 mm{sup 2} bicrystal substrate. The remaining space is used for test structures and SQUIDs without antennae, in order to control the technology as well as the SQUID design. Parallel processed dummy substrates were used to monitor the quality of film growth by x-ray analysis. The quality of our SQUID design will be discussed on the basis of the measured field gradient sensitivity and noise. The reliability of the devices is demonstrated by an NDE type measurement. (author)

  16. The role of Stern layer in the interplay of dielectric saturation and ion steric effects for the capacitance of graphene in aqueous electrolytes

    Science.gov (United States)

    Daniels, Lindsey; Scott, Matthew; Mišković, Z. L.

    2017-03-01

    Nano-scale devices continue to challenge our theoretical understanding of microscopic systems. Of particular interest is the characterization of the interface electrochemistry of graphene-based sensors. Typically operated in a regime of high ion concentration and high surface charge density, dielectric saturation and ion crowding become non-negligible at the interface, complicating continuum treatments based upon the Poisson-Boltzmann equation. Using the Poisson-Boltzmann equation, modified with the Bikerman-Freise model to account for non-zero ion size and the Booth model to account for dielectric saturation at the interface, we characterize the diffuse layer capacitance of both metallic and graphene electrodes immersed in an aqueous electrolyte. We find that the diffuse layer capacitance exhibits two peaks when the surface charge density of the electrode is increased, in contrast with experimental results. We propose a self-consistent (and parameter-free) method to include the Stern layer which eliminates the spurious secondary peak in the capacitance and restores the correspondence of the model with experimental observations. This study sheds light on the interplay between the ion steric effects and the dielectric saturation in solvent, exposes the importance of quantum capacitance when graphene is used as an electrode, and demonstrates the importance of a self-consistent treatment of the Stern layer in continuum models of the electrode-electrolyte interface. Furthermore, the theoretical foundation provides a base upon which more detailed models of graphene-based sensors can be built.

  17. Antenna with Dielectric Having Geometric Patterns

    Science.gov (United States)

    Dudley, Kenneth L. (Inventor); Elliott, Holly A. (Inventor); Cravey, Robin L. (Inventor); Connell, John W. (Inventor); Ghose, Sayata (Inventor); Watson, Kent A. (Inventor); Smith, Jr., Joseph G. (Inventor)

    2013-01-01

    An antenna includes a ground plane, a dielectric disposed on the ground plane, and an electrically-conductive radiator disposed on the dielectric. The dielectric includes at least one layer of a first dielectric material and a second dielectric material that collectively define a dielectric geometric pattern, which may comprise a fractal geometry. The radiator defines a radiator geometric pattern, and the dielectric geometric pattern is geometrically identical, or substantially geometrically identical, to the radiator geometric pattern.

  18. Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors.

    Science.gov (United States)

    Gu, Zhi-Gang; Chen, Shan-Ci; Fu, Wen-Qiang; Zheng, Qingdong; Zhang, Jian

    2017-03-01

    Metal-organic framework (MOF) thin films are important in the application of sensors and devices. However, the application of MOF thin films in organic field effect transistors (OFETs) is still a challenge to date. Here, we first use the MOF thin film prepared by a liquid-phase epitaxial (LPE) approach (also called SURMOFs) to modify the SiO 2 dielectric layer in the OFETs. After the semiconductive polymer of PTB7-Th (poly[4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b:4,5-b']dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]) was coated on MOF/SiO 2 and two electrodes on the semiconducting film were deposited sequentially, MOF-based OFETs were fabricated successfully. By controlling the LPE cycles of SURMOF HKUST-1 (also named Cu 3 (BTC) 2 , BTC = 1,3,5-benzenetricarboxylate), the performance of the HKUST-1/SiO 2 -based OFETs showed high charge mobility and low threshold voltage. This first report on the application of MOF thin film in OFETs will offer an effective approach for designing a new kind of materials for the OFET application.

  19. Identification of nanostructural development in epoxy polymer layered silicate nanocomposites from the interpretation of differential scanning calorimetry and dielectric spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Roman, Frida, E-mail: roman@mmt.upc.edu [Laboratori de Termodinamica, Departament de Maquines i Motors Termics, ETSEIAT, Universitat Politecnica de Catalunya, Carrer Colom 11, 08222 Terrassa (Spain); Calventus, Yolanda, E-mail: calventus@mmt.upc.edu [Laboratori de Termodinamica, Departament de Maquines i Motors Termics, ETSEIAT, Universitat Politecnica de Catalunya, Carrer Colom 11, 08222 Terrassa (Spain); Colomer, Pere, E-mail: colomer@mmt.upc.edu [Laboratori de Termodinamica, Departament de Maquines i Motors Termics, ETSEIAT, Universitat Politecnica de Catalunya, Carrer Colom 11, 08222 Terrassa (Spain); Hutchinson, John M., E-mail: hutchinson@mmt.upc.edu [Laboratori de Termodinamica, Departament de Maquines i Motors Termics, ETSEIAT, Universitat Politecnica de Catalunya, Carrer Colom 11, 08222 Terrassa (Spain)

    2012-08-10

    Highlights: Black-Right-Pointing-Pointer Comparison of DSC and DRS in the cure of epoxy nanocomposites. Black-Right-Pointing-Pointer Dependence of exfoliation of nanocomposite on clay content. Black-Right-Pointing-Pointer Anionically initiated homopolymerisation in PLS nanocomposites. - Abstract: The effect of nanoclay on the non-isothermal cure kinetics of polymer layered silicate nanocomposites based upon epoxy resin is studied by calorimetric techniques (DSC and TGA) and by dielectric relaxation spectroscopy (DRS) in non-isothermal cure at constant heating rate. The cure process takes place by homopolymerisation, initiated anionically using 3 wt% dimethylaminopyridine (DMAP), and the influence of the nanoclay content has been analysed. Interesting differences are observed between the nanocomposites with 2 wt% and 5 wt% clay content. At low heating rates, these samples vitrify and then devitrify during the cure. For the sample with 2 wt% clay, the devitrification is accompanied by a thermally initiated homopolymerisation, which can be identified by DRS but not by DSC. The effect of this is to improve the exfoliation of the nanocomposite with 2 wt% clay, as verified by transmission electron microscopy, with a corresponding increase in the glass transition temperature. These observations are interpreted in respect of the nanocomposite preparation method and the cure kinetics.

  20. Single-bunch beam breakup in a dielectric-lined waveguide

    International Nuclear Information System (INIS)

    Ng, King-Yuen.

    1992-08-01

    We examine beam breakup of a 100 nC I mm-long (rms) source bunch inside a cylindrical dielectric waveguide, with dielectric ε = 2.65 filling the radius between 7.5 and 9.0 mm. Only ∼ 78% of the bunch with an initial offset of 0.3 mm survives the passage of the 3.75 m waveguide. The loss is mainly due to the large deflections of some particles that are slowed down to nearly zero velocity. As a result, quadrupole focussing of any sort will not help. However, if the waveguide is shortened to 3.3 m, the loss reduces to only 5.5%

  1. Effect of annealing on various dielectric functions and refractive index of lead iodide single crystals

    Czech Academy of Sciences Publication Activity Database

    Hassan, M. A. S.; Matuchová, Marie

    2006-01-01

    Roč. 60, 2/3 (2006), s. 51-54 ISSN 1407-009X R&D Projects: GA ČR(CZ) GA102/03/0379; GA ČR(CZ) GA102/04/0959; GA AV ČR(CZ) KSK1010104 Institutional research plan: CEZ:AV0Z20670512 Keywords : dielectric losses * refractive index * characteristics measurement Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  2. Adsorption of metal adatoms on single-layer phosphorene.

    Science.gov (United States)

    Kulish, Vadym V; Malyi, Oleksandr I; Persson, Clas; Wu, Ping

    2015-01-14

    Single- or few-layer phosphorene is a novel two-dimensional direct-bandgap nanomaterial. Based on first-principles calculations, we present a systematic study on the binding energy, geometry, magnetic moment and electronic structure of 20 different adatoms adsorbed on phosphorene. The adatoms cover a wide range of valences, including s and p valence metals, 3d transition metals, noble metals, semiconductors, hydrogen and oxygen. We find that adsorbed adatoms produce a rich diversity of structural, electronic and magnetic properties. Our work demonstrates that phosphorene forms strong bonds with all studied adatoms while still preserving its structural integrity. The adsorption energies of adatoms on phosphorene are more than twice higher than on graphene, while the largest distortions of phosphorene are only ∼0.1-0.2 Å. The charge carrier type in phosphorene can be widely tuned by adatom adsorption. The unique combination of high reactivity with good structural stability is very promising for potential applications of phosphorene.

  3. Plasmon enhanced terahertz emission from single layer graphene.

    Science.gov (United States)

    Bahk, Young-Mi; Ramakrishnan, Gopakumar; Choi, Jongho; Song, Hyelynn; Choi, Geunchang; Kim, Yong Hyup; Ahn, Kwang Jun; Kim, Dai-Sik; Planken, Paul C M

    2014-09-23

    We show that surface plasmons, excited with femtosecond laser pulses on continuous or discontinuous gold substrates, strongly enhance the generation and emission of ultrashort, broadband terahertz pulses from single layer graphene. Without surface plasmon excitation, for graphene on glass, 'nonresonant laser-pulse-induced photon drag currents' appear to be responsible for the relatively weak emission of both s- and p-polarized terahertz pulses. For graphene on a discontinuous layer of gold, only the emission of the p-polarized terahertz electric field is enhanced, whereas the s-polarized component remains largely unaffected, suggesting the presence of an additional terahertz generation mechanism. We argue that in the latter case, 'surface-plasmon-enhanced optical rectification', made possible by the lack of inversion symmetry at the graphene on gold surface, is responsible for the strongly enhanced emission. The enhancement occurs because the electric field of surface plasmons is localized and enhanced where the graphene is located: at the surface of the metal. We believe that our results point the way to small, thin, and more efficient terahertz photonic devices.

  4. Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Karteri, İbrahim, E-mail: ibrahimkarteri@gmail.com [Department of Materials Science And Engineering, Kahramanmaras Sutcu Imam University, Kahramanmaraş 4610 (Turkey); Karataş, Şükrü [Department of Physics, Kahramanmaras Sutcu Imam University, Kahramanmaraş 4610 (Turkey); Yakuphanoğlu, Fahrettin [Department of Physics, Fırat University, Elazıg 2310 (Turkey)

    2014-11-01

    Highlights: • We report the synthesis of graphene oxide nanosheets and electrical characterization of graphene oxide based thin film transistor. • Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. • We used insulator layers which are polymethylmethacrylate (PMMA) and polyvinyl phenol (PVP) for graphene oxide based thin flim transistor. - Abstract: We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV–vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and I{sub on}/I{sub off} of GO-TFT were found to be 0.105 cm{sup 2} V{sup −1} s{sup −1}, −8.7 V, 4.03 V/decade and 10, respectively.

  5. Stress effects of the inter-level dielectric layer on the ferroelectric performance of integrated SrBi2Ta2O9 capacitors

    International Nuclear Information System (INIS)

    Hong, Suk-Kyoung; Yang, B.; Oh, Sang Hyun; Kang, Young Min; Kang, Nam Soo; Hwang, Cheol Seong; Kwon, Oh Seong

    2001-01-01

    The thermal stress effects of the inter-level dielectric (ILD) layer on the ferroelectric performance of integrated Pt/SrBi 2 Ta 2 O 9 (SBT)/Pt capacitors were investigated. Two different thin film materials, pure SiO 2 grown at 650 degree C and B- and P-doped SiO 2 grown at 400 degree C by chemical vapor deposition techniques, were tested as an ILD layer. The ILD layer encapsulated the SBT capacitor array. During high temperature thermal cycling (up to 800 degree C) after ILD deposition, which is used for both densifying the ILD and curing of the various damage imposed on the SBT capacitors, a large thermal stress occurred in the bottom Pt layer due to the thermal expansion mismatch between the various layers. In particular, the pure SiO 2 ILD layer between the capacitors did not allow thermal expansion of the Pt layers, which led to a large accumulation of compressive stress in the layer. This resulted in hillock formation in the bottom Pt layer and eventual capacitor failure. However, the B- and P-doped SiO 2 ILD layer contracted during thermal cycling by removing residual impurities, which allowed greater expansion of the Pt layer. Therefore, compressive stress accumulation did not occur and excellent ferroelectric properties were thus obtained from the integrated capacitor array. [copyright] 2001 American Institute of Physics

  6. Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus.

    Science.gov (United States)

    Rudenko, A N; Brener, S; Katsnelson, M I

    2016-06-17

    We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to the scattering by flexural phonons dominate at any practically relevant temperatures and are independent of the carrier concentration n, two-phonon scattering in BP is less important and can be considered negligible at n≳10^{13}  cm^{-2}. At smaller n, however, phonons enter in the essentially anharmonic regime. Compared to the hole mobility, which does not exhibit strong anisotropy between the principal directions of BP (μ_{xx}/μ_{yy}∼1.4 at n=10^{13} cm^{-2} and T=300  K), the electron mobility is found to be significantly more anisotropic (μ_{xx}/μ_{yy}∼6.2). Absolute values of μ_{xx} do not exceed 250 (700)  cm^{2} V^{-1} s^{-1} for holes (electrons), which can be considered as an upper limit for the mobility in BP at room temperature.

  7. Comparison of Single-Layer and Double-Layer Anti-Reflection Coatings Using Laser-Induced Damage Threshold and Photothermal Common-Path Interferometry

    Directory of Open Access Journals (Sweden)

    Caspar Clark

    2016-05-01

    Full Text Available The dielectric thin-film coating on high-power optical components is often the weakest region and will fail at elevated optical fluences. A comparison of single-layer coatings of ZrO2, LiF, Ta2O5, SiN, and SiO2 along with anti-reflection (AR coatings optimized at 1064 nm comprised of ZrO2 and Ta2O5 was made, and the results of photothermal common-path interferometry (PCI and a laser-induced damage threshold (LIDT are presented here. The coatings were grown by radio frequency (RF sputtering, pulsed direct-current (DC sputtering, ion-assisted electron beam evaporation (IAD, and thermal evaporation. Test regimes for LIDT used pulse durations of 9.6 ns at 100 Hz for 1000-on-1 and 1-on-1 regimes at 1064 nm for single-layer and AR coatings, and 20 ns at 20 Hz for a 200-on-1 regime to compare the //ZrO2/SiO2 AR coating.

  8. Study of stratified dielectric slab medium structures using pseudo-spectral time domain (PSTD) algorithm

    DEFF Research Database (Denmark)

    Tong, M.S.; Lu, Y.; Chen, Y.

    2005-01-01

    A planar stratified dielectric slab medium, which is an interesting problem in optics and geophysics, is studied using a pseudo-spectral time-domain (PSTD) algorithm. Time domain electric fields and frequency domain propagation characteristics of both single and periodic dielectric slab-layer str...

  9. Peculiarities of superconductivity in the single-layer FeSe /SrTi O3 interface

    Science.gov (United States)

    Gor'kov, Lev P.

    2016-02-01

    Observation of replica bands in the angle-resolved photoemission spectroscopy (ARPES) spectra of single-layer FeSe on a strontium titanate substrate revealed a phonon component contribution to mechanisms behind its high-Tc superconductivity. We study the interaction of the in-layer FeSe electrons with the electric potential of the longitudinal (LO) modes at the surface of bulk SrTi O3 . A two-dimensional system of charges at the FeSe /SrTi O3 interface includes both the itinerant and the immobile electrons. The latter significantly change the interface characteristics, increasing screening at the substrate surface and thereby reducing the strength of the electron-LO-phonon interaction. In what follows, the dielectric constant serves as a free parameter and is determined using the ARPES measurements of the replicas. Two-dimensional Coulomb screening is accounted for in the random-phase approximation. It is shown that the model is applicable over the entire range of the parameters typical for current experiments. The estimates from this model make possible the conclusion that the LO-phonon-mediated pairing alone cannot account for the temperatures of the superconducting transitions Tc in the single-layer FeSe /SrTi O3 reported in these experiments. This does not exclude that the LO-phonon mechanisms can become more significant in differently and better prepared single-layer FeSe films. Available experiments are briefly discussed. Thus far no measurements exist on the dependence of Tc on the concentration of electrons doped into the in-layer FeSe band.

  10. Synthesis of PbI(2) single-layered inorganic nanotubes encapsulated within carbon nanotubes.

    Science.gov (United States)

    Cabana, Laura; Ballesteros, Belén; Batista, Eudar; Magén, César; Arenal, Raúl; Oró-Solé, Judith; Rurali, Riccardo; Tobias, Gerard

    2014-04-02

    The template assisted growth of single-layered inorganic nanotubes is reported. Single-crystalline lead iodide single-layered nanotubes have been prepared using the inner cavities of carbon nanotubes as hosting templates. The diameter of the resulting inorganic nanotubes is merely dependent on the diameter of the host. This facile method is highly versatile opening up new horizons in the preparation of single-layered nanostructures. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. The consequences of air flow on the distribution of aqueous species during dielectric barrier discharge treatment of thin water layers

    Science.gov (United States)

    Tian, Wei; Lietz, Amanda M.; Kushner, Mark J.

    2016-10-01

    The desired outcomes of wet tissue treatment by dielectric barrier discharges (DBDs) strongly depend on the integrated fluences of reactive species incident onto the tissue, which are determined by power, frequency and treatment time. The reactivity produced by such plasmas is often expected to be proportional to treatment time due to the accumulation of radicals in the liquid over the tissue. However, one of the typically uncontrolled parameters in DBD treatment of liquids and tissue is gas flow, which could affect the delivery of plasma produced radicals to the tissue. Gas flow can redistribute long-lived, plasma produced gas phase species prior to solvating in the liquid, while not greatly affecting the solvation of short-lived species. Gas flow can therefore potentially be a control mechanism for tailoring the fluences of reactive species to the tissue. In this paper, we report on a computational investigation of the consequences of gas flow on treatment of liquid layers covering tissue by atmospheric DBDs by up to 100 pulses. We found that gas flow (through residence time of the gas) can control the production of gas phase species requiring many collisions to form, such as reactive nitrogen species (RNS). The resulting solvation of the RNS in turn controls the production of aqueous species such as \\text{NO}\\text{3aq}- and \\text{ONOO}\\text{aq}- (aq denotes an aqueous species). With the exception of O3 and O3aq, reactive oxygen species (ROS) are less sensitive to gas flow, and so OHaq and H2O2aq, are determined primarily by discharge properties.

  12. Naphthalenetetracarboxylic diimide layer-based transistors with nanometer oxide and side chain dielectrics operating below one volt.

    Science.gov (United States)

    Jung, Byung Jun; Martinez Hardigree, Josue F; Dhar, Bal Mukund; Dawidczyk, Thomas J; Sun, Jia; See, Kevin Cua; Katz, Howard E

    2011-04-26

    We designed a new naphthalenetetracarboxylic diimide (NTCDI) semiconductor molecule with long fluoroalkylbenzyl side chains. The side chains, 1.2 nm long, not only aid in self-assembly and kinetically stabilize injected electrons but also act as part of the gate dielectric in field-effect transistors. On Si substrates coated only with the 2 nm thick native oxide, NTCDI semiconductor films were deposited with thicknesses from 17 to 120 nm. Top contact Au electrodes were deposited as sources and drains. The devices showed good transistor characteristics in air with 0.1-1 μA of drain current at 0.5 V of V(G) and V(DS) and W/L of 10-20, even though channel width (250 μm) is over 1000 times the distance (20 nm) between gate and drain electrodes. The extracted capacitance-times-mobility product, an expression of the sheet transconductance, can exceed 100 nS V(-1), 2 orders of magnitude higher than typical organic transistors. The vertical low-frequency capacitance with gate voltage applied in the accumulation regime reached as high as 650 nF/cm(2), matching the harmonic sum of capacitances of the native oxide and one side chain and indicating that some gate-induced carriers in such devices are distributed among all of the NTCDI core layers, although the preponderance of the carriers are still near the gate electrode. Besides demonstrating and analyzing thickness-dependent NTCDI-based transistor behavior, we also showed <1 V detection of dinitrotoluene vapor by such transistors.

  13. Touch stimulated pulse generation in biomimetic single-layer graphene

    Science.gov (United States)

    Sul, Onejae; Chun, Hyunsuk; Choi, Eunseok; Choi, Jungbong; Cho, Kyeongwon; Jang, Dongpyo; Chun, Sungwoo; Park, Wanjun; Lee, Seung-Beck

    2016-02-01

    Detecting variation in contact pressure is a separate sensing mode in the human somatosensory system that differs from the detection of pressure magnitude. If pressure magnitude and variation sensing can be achieved simultaneously, an advanced biomimetic tactile system that better emulates human senses may be developed. We report on a novel single-layer graphene based artificial mechanoreceptor that generates a resistance pulse as the contact stimulus passes a specific threshold pressure, mimicking the generation of action potentials in a biological fast-adapting mechanoreceptor. The electric field from a flexible membrane gate electrode placed above a graphene channel raises the Fermi level from the valence band as pressure deflects the membrane. The threshold pressure is reached when the Fermi level crosses the Dirac point in the graphene energy band, which generates a sharp peak in the measured resistance. We found that by changing the gate potential it was possible to modulate the threshold pressure and using a series of graphene channels, a train of pulses were generated during a transient pressurizing stimulus demonstrating biomimetic behaviour.Detecting variation in contact pressure is a separate sensing mode in the human somatosensory system that differs from the detection of pressure magnitude. If pressure magnitude and variation sensing can be achieved simultaneously, an advanced biomimetic tactile system that better emulates human senses may be developed. We report on a novel single-layer graphene based artificial mechanoreceptor that generates a resistance pulse as the contact stimulus passes a specific threshold pressure, mimicking the generation of action potentials in a biological fast-adapting mechanoreceptor. The electric field from a flexible membrane gate electrode placed above a graphene channel raises the Fermi level from the valence band as pressure deflects the membrane. The threshold pressure is reached when the Fermi level crosses the Dirac

  14. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah Hamud

    2016-08-24

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  15. Controlling guided modes in plasmonic metal/dielectric multilayer waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Wickremasinghe, N.; Wang, X.; Wagner, H. P. [Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221 (United States); Thompson, J. [Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221 (United States); Department of Physics, Xavier University, Cincinnati, Ohio 45207 (United States); Schmitzer, H. [Department of Physics, Xavier University, Cincinnati, Ohio 45207 (United States)

    2015-06-07

    We investigate the mode properties of planar dielectric aluminum-quinoline (Alq{sub 3}) multilayer waveguides comprising one single or three equally spaced embedded nanometer-thin (∼10 nm thick) Alq{sub 3}-Mg{sub 0.9}:Ag{sub 0.1} composite metal-island layers. The plasmonic waveguides were fabricated by organic molecular beam deposition. Transverse magnetic (TM) and transverse electric (TE) modes were selectively excited using the m-line method. The symmetric plasmonic TM{sub 0} mode was launched in all waveguides and—in addition—two higher order plasmonic TM{sub 1} and TM{sub 2} modes were generated in waveguides comprising three metal layers. Other TM modes have hybrid dielectric-plasmonic characters, showing an increased effective refractive index when one electric field antinode is close to a metallic layer. TM modes which have all their antinode(s) in the dielectric layers propagate essentially like dielectric modes. TE modes with antinode(s) at the position of the metal layer(s) are strongly damped while the losses are low for TE modes comprising a node at the position of the composite metal film(s). The possibility to control the effective refractive index and the losses for individual hybrid plasmonic-dielectric TM and dielectric TE modes opens new design opportunities for mode selective waveguides and TM-TE mode couplers.

  16. Electrical and optical transport properties of single layer WSe2

    Science.gov (United States)

    Tahir, M.

    2018-03-01

    The electronic properties of single layer WSe2 are distinct from the famous graphene due to strong spin orbit coupling, a huge band gap and an anisotropic lifting of the degeneracy of the valley degree of freedom under Zeeman field. In this work, band structure of the monolayer WSe2 is evaluated in the presence of spin and valley Zeeman fields to study the electrical and optical transport properties. Using Kubo formalism, an explicit expression for the electrical Hall conductivity is examined at finite temperatures. The electrical longitudinal conductivity is also evaluated. Further, the longitudinal and Hall optical conductivities are analyzed. It is observed that the contributions of the spin-up and spin-down states to the power absorption spectrum depend on the valley index. The numerical results exhibit absorption peaks as a function of photon energy, ℏ ω, in the range ∼ 1.5 -2 eV. Also, the optical response lies in the visible frequency range in contrast to the conventional two-dimensional electron gas or graphene where the response is limited to terahertz regime. This ability to isolate carriers in spin-valley coupled structures may make WSe2 a promising candidate for future spintronics, valleytronics and optical devices.

  17. Generalized single-hidden layer feedforward networks for regression problems.

    Science.gov (United States)

    Wang, Ning; Er, Meng Joo; Han, Min

    2015-06-01

    In this paper, traditional single-hidden layer feedforward network (SLFN) is extended to novel generalized SLFN (GSLFN) by employing polynomial functions of inputs as output weights connecting randomly generated hidden units with corresponding output nodes. The significant contributions of this paper are as follows: 1) a primal GSLFN (P-GSLFN) is implemented using randomly generated hidden nodes and polynomial output weights whereby the regression matrix is augmented by full or partial input variables and only polynomial coefficients are to be estimated; 2) a simplified GSLFN (S-GSLFN) is realized by decomposing the polynomial output weights of the P-GSLFN into randomly generated polynomial nodes and tunable output weights; 3) both P- and S-GSLFN are able to achieve universal approximation if the output weights are tuned by ridge regression estimators; and 4) by virtue of the developed batch and online sequential ridge ELM (BR-ELM and OSR-ELM) learning algorithms, high performance of the proposed GSLFNs in terms of generalization and learning speed is guaranteed. Comprehensive simulation studies and comparisons with standard SLFNs are carried out on real-world regression benchmark data sets. Simulation results demonstrate that the innovative GSLFNs using BR-ELM and OSR-ELM are superior to standard SLFNs in terms of accuracy, training speed, and structure compactness.

  18. [Single-layer colonic anastomoses using polyglyconate (Maxon) vs. two-layer anastomoses using chromic catgut and silk. Experimental study].

    Science.gov (United States)

    García-Osogobio, Sandra Minerva; Takahashi-Monroy, Takeshi; Velasco, Liliana; Gaxiola, Miguel; Sotres-Vega, Avelina; Santillán-Doherty, Patricio

    2006-01-01

    The safety of an intestinal anastomosis is usually measured by its complication rate, especially the incidence of anastomotic leakage. A wide variety of methods have been described to reestablish intestinal continuity including single-layer continuous or two-layer interrupted anastomosis. To evaluate if the single-layer continuous anastomosis using polygluconate is safer and reliable than two-layer interrupted anastomosis with chromic catgut and silk. A prospective, experimental, randomized and comparative analysis was conducted in 20 dogs. They were divided in two groups; group 1 underwent two-layer interrupted anastomosis and group 2 underwent sigle-layer continuous technique. Anastomoses were timed. Both groups were under observation. Anastomotic leakage, and other complications were evaluated. The animals were sacrified and the anastomosis was taken out together with 10 cm of colon on both sides of the anastomosis. Breaking strength, histologic evaluation and hydroxyproline determination were performed. Ten two-layer anastomosis and ten single-layer anastomosis were performed. A median of 25 minutes (range: 20-30 minutes) was required to construct the anastomoses in group 1 versus 20 minutes (range: 12-25 minutes) in group 2. All animals survived and no leakage was observed. Wound infection ocurred in four dogs (20%). Median breaking strength was 230 mm Hg in group 1 and 210 mm Hg in group 2. Hydroxyproline concentration was 8.94 mg/g in group 1 (range: 5.33-16.71) and 9.94 mg/g in group 2 (range: 2.96-21.87). There was no difference among groups about the inflammatory response evaluated by pathology. There was no statistical significance in any variable evaluated. CONCLUIONS: This study demonstrates that a single-layer continuous is similar in terms of safety to the two-layer technique, but because of its facility to perform, the single-layer technique could be superior.

  19. Plasma process-induced latent damage on gate oxide - demonstrated by single-layer and multi-layer antenna structures

    NARCIS (Netherlands)

    Wang, Zhichun; Ackaert, Jan; Salm, Cora; Kuper, F.G.

    2001-01-01

    In this paper, by using both single-layer (SL) and multi-layer (ML) or stacked antenna structures, a simple experimental method is proposed to directly demonstrate the pure plasma process-induced latent damage on gate oxide without any impact of additional defects generated by normal constant

  20. Optimal Super Dielectric Material

    Science.gov (United States)

    2015-09-01

    can potentially be optimized to create capacitors with unprecedented energy density. 14. SUBJECT TERMS capacitor , supercapacitor, super ... Capacitor -Increase Area (A)............8 b. Multi-layer Ceramic Capacitor -Decrease Thickness (d) .......10 c. Super Dielectric Material-Increase...EDLC and far above ceramic capacitors , after [5] ............................................9 Table 3. Super Dielectric Material Capacitors from

  1. Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

    Science.gov (United States)

    Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

    2015-12-01

    Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10-10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

  2. Quenching Mo optical losses in CIGS solar cells by a point contacted dual-layer dielectric spacer: a 3-D optical study.

    Science.gov (United States)

    Rezaei, Nasim; Isabella, Olindo; Vroon, Zeger; Zeman, Miro

    2018-01-22

    A 3-D optical modelling was calibrated to calculate the light absorption and the total reflection of fabricated CIGS solar cells. Absorption losses at molybdenum (Mo) / CIGS interface were explained in terms of plasmonic waves. To quench these losses, we assumed the insertion of a lossless dielectric spacer between Mo and CIGS, whose optical properties were varied. We show that such a spacer with low refractive index and proper thickness can significantly reduce absorption in Mo in the long wavelength regime and improve the device's rear reflectance, thus leading to enhanced light absorption in the CIGS layer. Therefore, we optimized a realistic two-layer MgF 2 / Al 2 O 3 dielectric spacer to exploit (i) the passivation properties of ultra-thin Al 2 O 3 on the CIGS side for potential high open-circuit voltage and (ii) the low refractive index of MgF 2 on the Mo side to reduce its optical losses. Combining our realistic spacer with optically-optimized point contacts increases the implied photocurrent density of a 750 nm-thick CIGS layer by 10% for the wavelengths between 700 and 1150 nm with respect to the reference cell. The elimination of plasmonic resonances in the new structure leads to a higher electric field magnitude at the bottom of CIGS layer and justifies the improved optical performance.

  3. Single track and single layer formation in selective laser melting of niobium solid solution alloy

    Directory of Open Access Journals (Sweden)

    Yueling GUO

    2018-04-01

    Full Text Available Selective laser melting (SLM was employed to fabricate Nb-37Ti-13Cr-2Al-1Si (at% alloy, using pre-alloyed powders prepared by plasma rotating electrode processing (PREP. A series of single tracks and single layers under different processing parameters was manufactured to evaluate the processing feasibility by SLM, including laser power, scanning speed, and hatch distance. Results showed that continuous single tracks could be fabricated using proper laser powers and scanning velocities. Both the width of a single track and its penetration depth into a substrate increased with an increase of the linear laser beam energy density (LED, i.e., an increase of the laser power and a decrease of the scanning speed. Nb, Ti, Si, Cr, and Al elements distributed heterogeneously over the melt pool in the form of swirl-like patterns. An excess of the hatch distance was not able to interconnect neighboring tracks. Under improper processing parameters, a balling phenomenon occurred, but could be eliminated with an increased LED. This work testified the SLM-processing feasibility of Nb-based alloy and promoted the application of SLM to the manufacture of niobium-based alloys. Keywords: Additive manufacturing, Melt pool, Niobium alloy, Powder metallurgy, Selective laser melting

  4. High-performance planar nanoscale dielectric capacitors

    OpenAIRE

    Ciraci, S.; Özçelik, V. Ongun

    2016-01-01

    We propose a model for planar nanoscale dielectric capacitor consisting of a single layer, insulating hexagonal boron nitride (BN) stripe placed between two metallic graphene stripes, all forming commensurately a single atomic plane. First-principles density functional calculations on these nanoscale capacitors for different levels of charging and different widths of graphene - BN stripes mark high gravimetric capacitance values, which are comparable to those of supercapacitors made from othe...

  5. Novel doping alternatives for single-layer transition metal dichalcogenides

    Science.gov (United States)

    Onofrio, Nicolas; Guzman, David; Strachan, Alejandro

    2017-11-01

    Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.

  6. Single-layer HDR video coding with SDR backward compatibility

    Science.gov (United States)

    Lasserre, S.; François, E.; Le Léannec, F.; Touzé, D.

    2016-09-01

    The migration from High Definition (HD) TV to Ultra High Definition (UHD) is already underway. In addition to an increase of picture spatial resolution, UHD will bring more color and higher contrast by introducing Wide Color Gamut (WCG) and High Dynamic Range (HDR) video. As both Standard Dynamic Range (SDR) and HDR devices will coexist in the ecosystem, the transition from Standard Dynamic Range (SDR) to HDR will require distribution solutions supporting some level of backward compatibility. This paper presents a new HDR content distribution scheme, named SL-HDR1, using a single layer codec design and providing SDR compatibility. The solution is based on a pre-encoding HDR-to-SDR conversion, generating a backward compatible SDR video, with side dynamic metadata. The resulting SDR video is then compressed, distributed and decoded using standard-compliant decoders (e.g. HEVC Main 10 compliant). The decoded SDR video can be directly rendered on SDR displays without adaptation. Dynamic metadata of limited size are generated by the pre-processing and used to reconstruct the HDR signal from the decoded SDR video, using a post-processing that is the functional inverse of the pre-processing. Both HDR quality and artistic intent are preserved. Pre- and post-processing are applied independently per picture, do not involve any inter-pixel dependency, and are codec agnostic. Compression performance, and SDR quality are shown to be solidly improved compared to the non-backward and backward-compatible approaches, respectively using the Perceptual Quantization (PQ) and Hybrid Log Gamma (HLG) Opto-Electronic Transfer Functions (OETF).

  7. Parallel and cross-like domains due to d.c. and low frequency (< 2 Hz) electric fields in nematic liquid crystal layers with negative dielectric anisotropy

    International Nuclear Information System (INIS)

    Hinov, H.P.; Vistin, L.K.

    1979-01-01

    Parallel and cross-like domains due to d.c. and low frequency (< 2 Hz) electric fields, in nematic liquid crystal layers with negative dielectric anisotropy - MBBA and 440 are obtained experimentally and investigated. The basic experimental results are: the easy reproducibility of the parallel domains particularly in tilted LC layers 5-90μm with weak anchoring, synthesized on Schiff bases and when the cover glasses are treated with a surfactant - common soap; the creation of cross-like domains in thin homeotropic layers; the demonstration that these domains arise in the cathode region due to the strong inhomogeneous electric field which brings about a periodic bend-splay usually divided by disclinations. Out of the known electroslatic and electrohydrodynamic mechanisms only the flexoelectric effect, due to the gradient electric field, can explain the initial formation of these domains

  8. Changes in the biomechanical properties of a single cell induced by nonthermal atmospheric pressure micro-dielectric barrier discharge plasma.

    Science.gov (United States)

    Choi, Hyeongwon; Choi, Eun Ha; Kim, Kyung Sook

    2017-10-01

    Mechanical properties of a single cell are closely related to the fate and functions of the cell. Changes in mechanical properties may cause diseases or cell apoptosis. Selective cytotoxic effects of nonthermal atmospheric pressure micro-dielectric barrier discharge (DBD) plasma have been demonstrated on cancer cells. In this work, changes in the mechanical properties of a single cell induced by nonthermal atmospheric pressure micro-DBD plasma were investigated using atomic force microscopy (AFM). Two cervical cancer cell lines (HeLa and SiHa) and normal human fibroblast cells (HFBs) were exposed to micro-DBD plasma for various exposure times. The elasticity of a single cell was determined by force-distance curve measurement using AFM. Young's modulus was decreased by plasma treatment for all cells. The Young's modulus of plasma-treated HeLa cells was decreased by 75% compared to nontreated HeLa cells. In SiHa cells and HFBs, elasticity was decreased slightly. Chemical changes induced by the plasma treatment, which were observed by Raman spectroscopy, were also significant in HeLa cells compared to SiHa cells and HFBs. These results suggested that the molecular changes induced by micro-DBD plasma were related to cell mechanical changes. © 2017 Wiley Periodicals, Inc.

  9. Single-particle thermal diffusion of charged colloids: Double-layer theory in a temperature gradient

    NARCIS (Netherlands)

    Dhont, J.K.G.; Briels, Willem J.

    2008-01-01

    The double-layer contribution to the single-particle thermal diffusion coefficient of charged, spherical colloids with arbitrary double-layer thickness is calculated and compared to experiments. The calculation is based on an extension of the Debye-Hückel theory for the double-layer structure that

  10. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    Energy Technology Data Exchange (ETDEWEB)

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G. [Electrical Engineering Department, Technion, Haifa 3200 (Israel); Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J. [Electrical Engineering Department, Technion, Haifa 3200 (Israel); Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D. [Department of Material Science and Engineering, Technion, Haifa 3200 (Israel); Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Ankonina, G. [Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Photovoltaic Laboratory, Technion, Haifa 3200 (Israel)

    2015-10-07

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  11. Surface Morphology of Polyimide Thin Film Dip-Coated on Polyester Filament for Dielectric Layer in Fibrous Organic Field Effect Transistor

    Directory of Open Access Journals (Sweden)

    Rambausek Lina

    2014-09-01

    Full Text Available The idea of wearable electronics automatically leads to the concept of integrating electronic functions on textile substrates. Since this substrate type implies certain challenges in comparison with their rigid electronic companions, it is of utmost importance to investigate the application of materials for generating the electronic functions on the textile substrate. Only when interaction of materials and textile substrate is fully understood, the electronic function can be generated on the textile without changing the textile’s properties, being flexible or stretchable. This research deals with the optimization of the dielectric layer in a fibrous organic field effect transistor (OFET. A transistor can act as an electrical switch in a circuit. In this work, the polyimide layer was dip-coated on a copper-coated polyester filament. After thoroughly investigating the process conditions, best results with minimal thickness and roughness at full insulation could be achieved at a dip-coating speed of 50 mm/min. The polyimide solution was optimal at 15w% and the choice for the solvent NMP was made. In this paper, details on the pre-treatment methods, choice of solvent and dip-coating speed and their effect on layer morphology and thickness, electrical properties and roughness are reported. Results show that the use of polyimide as a dielectric layer in the architecture of a fibrous OFET is promising. Further research deals with the application of the semiconductor layer within the mentioned architecture, to finally build an OFET on a filament for application in smart textiles.

  12. A theoretical study of pump–probe experiment in single-layer ...

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 82; Issue 6. A theoretical study of pump–probe experiment in single-layer, bilayer and multilayer graphene ... Here we use it as a tool to study the phenomenon of anomalous Rabi oscillations in graphene that was predicted recently in single-layer graphene.

  13. Novel single-layer gas diffusion layer based on PTFE/carbon black composite for proton exchange membrane fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Chen-Yang, Y.W.; Hung, T.F.; Yang, F.L. [Department of Chemistry and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li 32023 (China); Huang, J. [Yeu Ming Tai Chemical Industrial Co., Ltd, Taichung 40768 (China)

    2007-11-08

    A series of poly(tetrafluoroethylene)/carbon black composite-based single-layer gas diffusion layers (PTFE/CB-GDLs) for proton exchange membrane fuel cell (PEMFC) was successfully prepared from carbon black and un-sintered PTFE, which included powder resin and colloidal dispersion, by a simple inexpensive method. The scanning electron micrographs of PTFE/CB-GDLs indicated that the PTFE resins were homogeneously dispersed in the carbon black matrix and showed a microporous layer (MPL)-like structure. The as-prepared PTFE/CB-GDLs exhibited good mechanical property, high gas permeability, and sufficient water repellency. The best current density obtained from the PEMFC with the single-layer PTFE/CB-GDL was 1.27 and 0.42 A cm{sup -2} for H{sub 2}/O{sub 2} and H{sub 2}/air system, respectively. (author)

  14. Optical and dielectric studies of KH2PO4 crystal influenced by organic ligand of citric acid and l-valine: A single crystal growth and comparative study

    Directory of Open Access Journals (Sweden)

    Mohd Anis

    Full Text Available In the present study pure, citric acid (CA and l-valine (LV doped potassium dihydrogen phosphate (KDP crystals have been grown with the aim to investigate the nonlinear optical applications facilitated by UV–visible, third order nonlinear optical (TONLO and dielectric properties. The structural parameters of grown crystals have been confirmed by single crystal X-ray diffraction analysis. The enhancement in optical transparency of KDP crystal due to addition of CA and LV has been examined within 200–900 nm by means of UV–visible spectral analysis. In addition, the transmittance data have been used to evaluate the effect of dopants on reflectance, refractive index and extinction coefficient of grown crystals in the visible region. The Z-scan analysis has been performed at 632.8 nm to identify the nature of photoinduced nonlinear refraction and nonlinear absorption in doped KDP crystals. The influence of π-bonded ligand of dopant CA and LV on TONLO susceptibility (χ3, refractive index (n2 and absorption coefficient (β of KDP crystals has been evaluated to discuss laser assisted device applications. The decrease in dielectric constant and dielectric loss of KDP crystal due to addition of CA and LV has been explored using the temperature dependent dielectric studies. Keywords: Crystal growth, Nonlinear optical materials, UV–visible studies, Z-scan analysis, Dielectric studies

  15. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    Science.gov (United States)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  16. A single hidden layer feedforward network with only one neuron in the hidden layer can approximate any univariate function

    OpenAIRE

    Guliyev, Namig; Ismailov, Vugar

    2016-01-01

    The possibility of approximating a continuous function on a compact subset of the real line by a feedforward single hidden layer neural network with a sigmoidal activation function has been studied in many papers. Such networks can approximate an arbitrary continuous function provided that an unlimited number of neurons in a hidden layer is permitted. In this paper, we consider constructive approximation on any finite interval of $\\mathbb{R}$ by neural networks with only one neuron in the hid...

  17. Modification of single-walled carbon nanotube electrodes by layer-by-layer assembly for electrochromic devices

    OpenAIRE

    Jain, Vaibhav; Yochum, Henry M.; Montazami, Reza; Heflin, James R.; Hu, Liangbing; Gruner, George

    2008-01-01

    We have studied the morphological properties and electrochromic (EC) performance of polythiophene multilayer films on single wall carbon nanotube (SWCNT) conductive electrodes. The morphology for different numbers of layer-by-layer (LbL) bilayer on the SWCNT electrode has been characterized with atomic force microscopy and scanning electron microscope, and it was found that the LbL multilayers significantly decrease the surface roughness of the nanoporous nanotube films. The controlled surfac...

  18. Design of a Single-Layer Microchannel for Continuous Sheathless Single-Stream Particle Inertial Focusing.

    Science.gov (United States)

    Zhang, Yan; Zhang, Jun; Tang, Fei; Li, Weihua; Wang, Xiaohao

    2018-02-06

    High-throughput, high-precision single-stream focusing of microparticles has a potentially wide range of applications in biochemical analysis and clinical diagnosis. In this work, we develop a sheathless three-dimensional (3D) particle-focusing method in a single-layer microchannel. This novel microchannel consists of periodic high-aspect-ratio curved channels and straight channels. The proposed method takes advantage of both the curved channels, which induce Dean flow to promote particle migration, and straight channels, which suppress the remaining stirring effects of Dean flow to stabilize the achieved particle focusing. The 3D particle focusing is demonstrated experimentally, and the mechanism is analyzed theoretically. The effects of flow rate, particle size, and cycle number on the focusing performance were also investigated. The experimental results demonstrate that polystyrene particles with diameters of 5-20 μm can be focused into a 3D single file within seven channel cycles, with the focusing accuracy up to 98.5% and focusing rate up to 98.97%. The focusing throughput could reach up to ∼10 5 counts/min. Furthermore, its applicability to biological cells is also demonstrated by 3D focusing of HeLa and melanoma cells and bovine blood cells in the proposed microchannel. The proposed sheathless passive focusing scheme, featuring a simple channel structure, small footprint (9 mm × 1.2 mm), compact layout, and uncomplicated fabrication procedure, holds great promise as an efficient 3D focusing unit for the development of next-generation on-chip flow cytometry.

  19. Droplet Measurement below Single-Layer Grid Fill

    Directory of Open Access Journals (Sweden)

    Vitkovic Pavol

    2016-01-01

    Full Text Available The main part of the heat transfer in a cooling tower is in a fill zone. This one is consist of a cooling fill. For the cooling tower is used a film fill or grid fill or splash fill in the generally. The grid fill has lower heat transfer performance like film fill usually. But their advantage is high resistance to blockage of the fill. The grid fill is consisted with independent layers made from plastic usually. The layers consist of several bars connected to the different shapes. For experiment was used the rhombus shape. The drops diameter was measured above and below the Grid fill.

  20. Phase transition, ferroelectric, and dielectric properties of layer-structured perovskite CaBi3Ti3O12-δ thin films

    Science.gov (United States)

    Kato, Kazumi; Suzuki, Kazuyuki; Nishizawa, Kaori; Miki, Takeshi

    2001-07-01

    Thin films of a bismuth-based layer-structured perovskite compound with a number of oxygen octahedron along the c axis between Bi-O layers of three, CaBi3Ti3O12-δ, were prepared using a mixture solution of complex alkoxides. The films crystallized below 550 °C. The crystal structure and surface morphology of these films changed between 600 and 650 °C. The 650 °C-annealed thin film consisted of well-developed grains and exhibited polarization-electric hysteresis loops. The remanent polarization and coercive electric field were 8.5 μC/cm2 and 124 kV/cm, respectively, at 7 V. The dielectric constant and loss factor were about 250 and 0.048, respectively, at 100 kHz.

  1. Single-layer versus double-layer laparoscopic intracorporeally sutured gastrointestinal anastomoses in the canine model.

    Science.gov (United States)

    Tavakoli, Azine; Bakhtiari, Jalal; Khalaj, Ali Reza; Gharagozlou, Mohammad Javad; Veshkini, Abbas

    2010-01-01

    The objective of this study was to compare the gross and histopathologic changes following 1- versus 2-layer hand-sewn suture techniques in laparoscopic gastrointestinal anastomosis in dogs. This was an experimental prospective study of 16 healthy mixed breed male and female dogs. Animals were randomly divided into 2 groups. Two-layer side-to-side hand-sewn laparoscopic gastrojejunostomies were performed in group A, so that simple interrupted sutures were placed in the outer layer and simple continuous suture was used in the inner layer. The 1-layer simple continuous anastomosis between the stomach and jejunum was done in group B precisely. Specimen were collected from the sites of anastomosis, and H&E statining was performed for light microscopic studies. All animals survived the surgery. There was no gross inflammation, ischemia, apparent granulation tissue, abscess or fistula formation, leakage or stricture formation, and all sites of anastomosis were patent. Several adhesion formations were found in the abdomen with the higher incidence in the control group. Mean scores of leukocyte infiltration and granulation tissue formation at the sites of anastomosis were statistically insignificant between groups (P>0.05). Gross and histopathologic findings revealed that hand-sewn laparoscopic gastrointestinal anastomosis with the 1-layer suture technique is comparable to the 2-layer suture technique.

  2. Electrical and Structural Properties Study of Layered Dielectric and Magnetic Composites and Blends Structures for RF and Microwave Applications

    Science.gov (United States)

    2014-06-12

    ANTENNAS, José Silva de Almeida Programa de Pós Graduação em Fisica da UFC (2011) 2-Study of thermal and structural stability of Ca (Nb12Y12...SYNTHESIS of CERAMIC MATERIALS with NEAR-ZERO τf Marcelo Antonio Santos da Silva, Programa de Pós Graduação em Quimica (2012) 4- STUDY OF DIELECTRIC

  3. Study on the formation of self-assembled monolayers on sol-gel processed hafnium oxide as dielectric layers.

    Science.gov (United States)

    Ting, Guy G; Acton, Orb; Ma, Hong; Ka, Jae Won; Jen, Alex K-Y

    2009-02-17

    High dielectric constant (k) metal oxides such as hafnium oxide (HfO2) have gained significant interest due to their applications in microelectronics. In order to study and control the surface properties of hafnium oxide, self-assembled monolayers (SAMs) of four different long aliphatic molecules with binding groups of phosphonic acid, carboxylic acid, and catechol were formed and characterized. Surface modification was performed to improve the interface between metal oxide and top deposited materials as well as to create suitable dielectric properties, that is, leakage current and capacitance densities, which are important in organic thin film transistors. Attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, contact angle goniometry, atomic force microscopy (AFM), and simple metal-HfO2-SAM-metal devices were used to characterize the surfaces before and after SAM modification on sol-gel processed hafnium oxide. The alkylphosphonic acid provided the best monolayer formation on sol-gel processed hafnium oxide to generate a well-packed, ultrathin dielectric exhibiting a low leakage current density of 2x10(-8) A/cm2 at an applied voltage of -2.0 V and high capacitance density of 0.55 microF/cm2 at 10 kHz. Dialkylcatechol showed similar characteristics and the potential for using the catechol SAMs to modify HfO2 surfaces. In addition, the integration of this alkylphosphonic acid SAM/hafnium oxide hybrid dielectric into pentacene-based thin film transistors yields low-voltage operation within 1.5 V and improved performance over bare hafnium oxide.

  4. Electric and dielectric behavior of copper-chromium layered double hydroxide intercalated with dodecyl sulfate anions using impedance spectroscopy

    Science.gov (United States)

    Elhatimi, Wafaa; Bouragba, Fatima Zahra; Lahkale, Radouane; Sadik, Rachid; Lebbar, Nacira; Siniti, Mustapha; Sabbar, Elmouloudi

    2018-05-01

    The Cu2Cr-DS-LDH hybrid was successfully prepared by the anion exchange method at room temperature. The structure, the chemical composition and the physico-chemical properties of the sample were determined using powder X-ray diffraction (PXRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA) and inductively coupled plasma (ICP). In this work, the electrical and dielectric properties investigated are determined using impedance spectroscopy (IS) in a frequency range of 1 Hz to 1 MHz. Indeed, the Nyquist diagram modelized by an electrical equivalent circuit showed three contributions attributed respectively to the polarization of grains, grains boundaries and interface electrode-sample. This modelization allowed us to determine the intrinsic electrical parameters of the hybrid (resistance, pseudo-capacitance and relaxation time). The presence of the non-Debye relaxation phenomena was confirmed by the frequency analysis of impedance. Moreover, the evolution of the alternating current conductivity (σac) studied obeys the double power law of Jonscher. The ionic conduction of this material was generated through a jump movement by translation of the charge carriers. As for the dielectric behavior of the material, the evolution of dielectric constant as a function of frequency shows relatively high values in a frequency range between 10 Hz and 1 KHz. The low values of the loss tangent obtained in this frequency zone can valorize this LDH hybrid.

  5. High performance of low band gap polymer-based ambipolar transistor using single-layer graphene electrodes.

    Science.gov (United States)

    Choi, Jong Yong; Kang, Woonggi; Kang, Boseok; Cha, Wonsuk; Son, Seon Kyoung; Yoon, Youngwoon; Kim, Hyunjung; Kang, Youngjong; Ko, Min Jae; Son, Hae Jung; Cho, Kilwon; Cho, Jeong Ho; Kim, BongSoo

    2015-03-18

    Bottom-contact bottom-gate organic field-effect transistors (OFETs) are fabricated using a low band gap pDTTDPP-DT polymer as a channel material and single-layer graphene (SLG) or Au source/drain electrodes. The SLG-based ambipolar OFETs significantly outperform the Au-based ambipolar OFETs, and thermal annealing effectively improves the carrier mobilities of the pDTTDPP-DT films. The difference is attributed to the following facts: (i) the thermally annealed pDTTDPP-DT chains on the SLG assume more crystalline features with an edge-on orientation as compared to the polymer chains on the Au, (ii) the morphological features of the thermally annealed pDTTDPP-DT films on the SLG electrodes are closer to the features of those on the gate dielectric layer, and (iii) the SLG electrode provides a flatter, more hydrophobic surface that is favorable for the polymer crystallization than the Au. In addition, the preferred carrier transport in each electrode-based OFET is associated with the HOMO/LUMO alignment relative to the Fermi level of the employed electrode. All of these experimental results consistently explain why the carrier mobilities of the SLG-based OFET are more than 10 times higher than those of the Au-based OTFT. This work demonstrates the strong dependence of ambipolar carrier transport on the source/drain electrode and annealing temperature.

  6. Ultra-thin, single-layer polarization rotator

    Energy Technology Data Exchange (ETDEWEB)

    Son, T. V.; Truong, V. V., E-mail: Truong.Vo-Van@Concordia.Ca [Department of Physics, Concordia University, Montreal, Quebec, H4B 1R6 (Canada); Do, P. A.; Haché, A. [Département de Physique et d’Astronomie, Université de Moncton, Moncton, New Brunswick, E1A 3E9 (Canada)

    2016-08-15

    We demonstrate light polarization control over a broad spectral range by a uniform layer of vanadium dioxide as it undergoes a phase transition from insulator to metal. Changes in refractive indices create unequal phase shifts on s- and p-polarization components of incident light, and rotation of linear polarization shows intensity modulation by a factor of 10{sup 3} when transmitted through polarizers. This makes possible polarization rotation devices as thin as 50 nm that would be activated thermally, optically or electrically.

  7. Lattice Vibration of Layered GaTe Single Crystals

    Directory of Open Access Journals (Sweden)

    Tao Wang

    2018-02-01

    Full Text Available The effect of interlayer interaction on in-layer structure of laminar GaTe crystals was studied according to the lattice vibration using micro-Raman analysis. The results were also confirmed by the first principle calculations. Accordingly, the relationship between lattice vibration and crystal structure was established. Ten peaks were observed in the micro-Raman spectra from 100 cm−1 to 300 cm−1. Eight of them fit Raman-active vibration modes and the corresponding displacement vectors were calculated, which proved that the two modes situated at 128.7 cm−1 and 145.7 cm−1 were related to the lattice vibration of GaTe, instead of impurities or defects. Davydov splitting in GaTe was identified and confirmed by the existence of the other two modes, conjugate modes, at 110.7 cm−1 (∆ω = 33.1 cm−1 and 172.5 cm−1 (∆ω = 49.5 cm−1, indicates that the weak interlayer coupling has a significant effect on lattice vibrations in the two-layer monoclinic unit cell. Our results further proved the existence of two layers in each GaTe unit cell.

  8. Plasmon resonance in single- and double-layer CVD graphene nanoribbons

    DEFF Research Database (Denmark)

    Wang, Di; Emani, Naresh K.; Chung, Ting Fung

    2015-01-01

    Dynamic tunability of the plasmonic resonance in graphene nanoribbons is desirable in the near-infrared. We demonstrated a constant blue shift of plasmonic resonances in double-layer graphene nanoribbons with respect to single-layer graphene nanoribbons. © OSA 2015.......Dynamic tunability of the plasmonic resonance in graphene nanoribbons is desirable in the near-infrared. We demonstrated a constant blue shift of plasmonic resonances in double-layer graphene nanoribbons with respect to single-layer graphene nanoribbons. © OSA 2015....

  9. Single-step in-situ synthesis and optical properties of ZnSe nanostructured dielectric nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Dey, Chirantan; Rahaman Molla, Atiar; Tarafder, Anal; Karmakar, Basudeb, E-mail: basudebk@cgcri.res.in [CSIR-Central Glass and Ceramic Research Institute, Glass Science and Technology Section, Glass Division, 196, Raja S. C. Mullick Road, 700032 Kolkata (India); Kr Mishra, Manish; De, Goutam [CSIR-Central Glass and Ceramic Research Institute, Nano-Structured Materials Division, 196, Raja S. C. Mullick Road, 700032 Kolkata (India); Goswami, Madhumita; Kothiyal, G. P. [Glass and Advanced Ceramics Division, Bhaba Atomic Research Centre, Trombay, 400085 Mumbai (India)

    2014-04-07

    This work provides the evidence of visible red photoluminescent light emission from ZnSe nanocrystals (NCs) grown within a dielectric (borosilicate glass) matrix synthesized by a single step in-situ technique for the first time and the NC sizes were controlled by varying only the concentration of ZnSe in glass matrix. The ZnSe NCs were investigated by UV-Vis optical absorption spectroscopy, Raman spectroscopy, and transmission electron microscopy (TEM). The sizes of the ZnSe NCs estimated from the TEM images are found to alter in the range of 2–53 nm. Their smaller sizes of the NCs were also calculated by using the optical absorption spectra and the effective mass approximation model. The band gap enlargements both for carrier and exciton confinements were evaluated and found to be changed in the range of 0–1.0 eV. The Raman spectroscopic studies showed blue shifted Raman peaks of ZnSe at 295 and 315 cm{sup −1} indicating phonon confinement effect as well as compressive stress effect on the surface atoms of the NCs. Red photoluminescence in ZnSe-glass nanocomposite reveals a broad multiple-peak structure due to overlapping of emission from NC size related electron-hole recombination (∼707 nm) and emissions from defects to traps, which were formed due to Se and Zn vacancies signifying potential application in photonics.

  10. Single layer of Ge quantum dots in HfO2for floating gate memory capacitors.

    Science.gov (United States)

    Lepadatu, A M; Palade, C; Slav, A; Maraloiu, A V; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, V S; Ciurea, M L

    2017-04-28

    High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO 2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2 /floating gate of single layer of Ge QDs in HfO 2 /tunnel HfO 2 /p-Si wafers. Both Ge and HfO 2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 10 15 m -2 is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO 2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO 2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO 2 NCs boundaries, while another part of the Ge atoms is present inside the HfO 2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO 2 , distanced from the Si substrate by the tunnel oxide layer with a precise thickness.

  11. A COMPARATIVE STUDY OF SINGLE VERSUS DOUBLE LAYER CLOSURE ON LOWER SEGMENT CAESAREAN SCAR

    Directory of Open Access Journals (Sweden)

    Kirtirekha Mohapatra

    2016-10-01

    Full Text Available BACKGROUND There are few issues in modern obstetrics that have been as controversial as management of a woman with a prior caesarean delivery. Hence, it is required to have evidence based correct practice of this surgical procedure. Healing of the uterine incision and the strength of the scar should be the most important consideration. The aim of the study is to compare the effect of technique of uterine closure (Single Layer vs. Double Layer on subsequent pregnancies and to find out, which technique has a better maternal and neonatal outcome by strengthening the scar. MATERIALS AND METHODS 500 cases of previous caesarean section pregnancies were taken, 250 from single layer closure group and 250 from double layer closure group. The mode of delivery during present pregnancy was noted. Integrity of scar, thickness of scar, presence of adhesion were documented. The neonates were observed. Results were compared so as to draw an inference about the better method. RESULTS Mean age between the two groups were similar. Majority did not have history of premature rupture of membrane during previous pregnancy. Postoperative complications were more when double layer closure of uterine scar was done in index surgery. Interpregnancy gap of <3 years was more commonly present in double layer closure group (52.8% in double layer versus 34.8% in single layer. Single layer had more scar tenderness (21.2%, thinned out scars (34.6%, incomplete ruptures (7.1% and complete ruptures (2.8% than double layer closure group. Neonatal outcomes were not statistically different in both the groups. CONCLUSION Double layer uterine closure seems to have better impact on scar integrity as compared to single layer uterine closure.

  12. Single layer graphene electrodes for quantum dot-light emitting diodes

    Science.gov (United States)

    Yan, Long; Zhang, Yu; Zhang, Xiaoyu; Zhao, Jia; Wang, Yu; Zhang, Tieqiang; Jiang, Yongheng; Gao, Wenzhu; Yin, Jingzhi; Zhao, Jun; Yu, William W.

    2015-03-01

    Single layer graphene was employed as the electrode in quantum dot-light emitting diodes (QD-LEDs) to replace indium tin oxide (ITO). The graphene layer demonstrated low surface roughness, good hole injection ability, and proper work function matching with the poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) layer. Together with the hole transport layer and electron transport layer, the fabricated QD-LED showed good current efficiency and power efficiency, which were even higher than an ITO-based similar device under low current density. The result indicates that graphene can be used as anodes to replace ITO in QD-LEDs.

  13. Ultra-thin, single-layer polarization rotator

    Directory of Open Access Journals (Sweden)

    T. V. Son

    2016-08-01

    Full Text Available We demonstrate light polarization control over a broad spectral range by a uniform layer of vanadium dioxide as it undergoes a phase transition from insulator to metal. Changes in refractive indices create unequal phase shifts on s- and p-polarization components of incident light, and rotation of linear polarization shows intensity modulation by a factor of 103 when transmitted through polarizers. This makes possible polarization rotation devices as thin as 50 nm that would be activated thermally, optically or electrically.

  14. Effect of H{sup +} ion implantation on structural, morphological, optical and dielectric properties of L-arginine monohydrochloride monohydrate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Sangeetha, K. [Crystal Growth and Thin film Laboratory, Department of Physics, School of Physics, Bharathidasan University, Tiruchirappalli 620024, Tamil Nadu (India); Babu, R. Ramesh, E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin film Laboratory, Department of Physics, School of Physics, Bharathidasan University, Tiruchirappalli 620024, Tamil Nadu (India); Kumar, P. [Inter-University Accelerator Centre, P.O. Box 10502, Aruna Asaf Ali Marg, New Delhi 110067 (India); Bhagvannarayana, G. [Materials Characterization Division, National Physical Laboratory, New Delhi 110012 (India); Ramamurthi, K. [Crystal Growth and Thin film Laboratory, Department of Physics, School of Physics, Bharathidasan University, Tiruchirappalli 620024, Tamil Nadu (India)

    2011-06-15

    L-arginine monohydrochloride monohydrate (LAHCl) single crystals have been implanted with 100 keV H{sup +} ions at different ion fluence ranging from 10{sup 12} to 10{sup 15} ions/cm{sup 2}. Implanted LAHCl single crystals have been investigated for property changes. Crystal surface and crystalline perfection of the pristine and implanted crystals were analyzed by atomic force microscope and high-resolution X-ray diffraction studies, respectively. Optical absorption bands induced by colour centers, refractive index and birefringence, mechanical stability and dielectric constant of implanted crystals were studied at different ion fluence and compared with that of pristine LAHCl single crystal.

  15. Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface

    International Nuclear Information System (INIS)

    Yagyu, Kazuma; Tochihara, Hiroshi; Tomokage, Hajime; Suzuki, Takayuki; Tajiri, Takayuki; Kohno, Atsushi; Takahashi, Kazutoshi

    2014-01-01

    Cu atoms deposited on a zero layer graphene grown on a SiC(0001) substrate, intercalate between the zero layer graphene and the SiC substrate after the thermal annealing above 600 °C, forming a Cu-intercalated single layer graphene. On the Cu-intercalated single layer graphene, a graphene lattice with superstructure due to moiré pattern is observed by scanning tunneling microscopy, and specific linear dispersion at the K ¯ point as well as a characteristic peak in a C 1s core level spectrum, which is originated from a free-standing graphene, is confirmed by photoemission spectroscopy. The Cu-intercalated single layer graphene is found to be n-doped

  16. Study of the mechanical properties of single- layer and multi-layer metallic coatings with protective-decorative applications

    Directory of Open Access Journals (Sweden)

    Cherneva Sabina

    2018-01-01

    Full Text Available Single thin coating of matt nickel (Nimat, a mirror bright copper (Cubright, a mirror bright nickel (Nibright and their combinations were electrochemically deposited on brass substrate with thickness 500 μm. The basic aim was electrodeposition of two-layer Cubright/Nimat and Nibright/Cubright systems, and three-layer Nibright Cubrigh/Nimat system, which are among the most widely applied protective and decorative systems in light and medium operating conditions of corrosion. The thicknesses of the obtained films varied from 1 μm to 3.25 μm. They were investigated via nanoindentation experiments, in order to characterize their basic physical and mechanical characteristics, related with their good adhesion and corrosion protective ability, as well as ensuring the integrity of the system “protective coating/substrate” to possible mechanical, dynamic and/or thermal stresses. As a result, load-displacement curves were obtained and indentation hardness and indentation modulus were calculated using the Oliver & Pharr approximation method. The dependence of the indentation modulus and the indentation hardness on the depth of the indentation, surface morphology and structure of the obtained coatings, their texture and surface roughness were investigated too. The obtained results showed that the three-layer Nibright/Cubright /Niimat/CuZn37 system has highest indentation modulus and indentation hardness, following by two-layer Nibright/Cubright system and single layer coatings.

  17. Single-layer Ultralight, Flexible, Shielding Tension Shell System for Extreme Heat and Radiation

    Data.gov (United States)

    National Aeronautics and Space Administration — The objective of this project is to develop a flexible thermal protection system (FTPS) with a Boron Nitride Nanotube (BNNT)-based single-layer, lightweight,...

  18. Diverse and tunable electronic structures of single-layer metal phosphorus trichalcogenides for photocatalytic water splitting

    International Nuclear Information System (INIS)

    Liu, Jian; Li, Xi-Bo; Wang, Da; Liu, Li-Min; Lau, Woon-Ming; Peng, Ping

    2014-01-01

    The family of bulk metal phosphorus trichalcogenides (APX 3 , A = M II , M 0.5 I M 0.5 III ; X = S, Se; M I , M II , and M III represent Group-I, Group-II, and Group-III metals, respectively) has attracted great attentions because such materials not only own magnetic and ferroelectric properties, but also exhibit excellent properties in hydrogen storage and lithium battery because of the layered structures. Many layered materials have been exfoliated into two-dimensional (2D) materials, and they show distinct electronic properties compared with their bulks. Here we present a systematical study of single-layer metal phosphorus trichalcogenides by density functional theory calculations. The results show that the single layer metal phosphorus trichalcogenides have very low formation energies, which indicates that the exfoliation of single layer APX 3 should not be difficult. The family of single layer metal phosphorus trichalcogenides exhibits a large range of band gaps from 1.77 to 3.94 eV, and the electronic structures are greatly affected by the metal or the chalcogenide atoms. The calculated band edges of metal phosphorus trichalcogenides further reveal that single-layer ZnPSe 3 , CdPSe 3 , Ag 0.5 Sc 0.5 PSe 3 , and Ag 0.5 In 0.5 PX 3 (X = S and Se) have both suitable band gaps for visible-light driving and sufficient over-potentials for water splitting. More fascinatingly, single-layer Ag 0.5 Sc 0.5 PSe 3 is a direct band gap semiconductor, and the calculated optical absorption further convinces that such materials own outstanding properties for light absorption. Such results demonstrate that the single layer metal phosphorus trichalcogenides own high stability, versatile electronic properties, and high optical absorption, thus such materials have great chances to be high efficient photocatalysts for water-splitting

  19. Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

    Science.gov (United States)

    Hu, Yaoqiao; Jiang, Huaxing; Lau, Kei May; Li, Qiang

    2018-04-01

    For the first time, ZrO2 dielectric deposition on pristine monolayer MoS2 by atomic layer deposition (ALD) is demonstrated and ZrO2/MoS2 top-gate MOSFETs have been fabricated. ALD ZrO2 overcoat, like other high-k oxides such as HfO2 and Al2O3, was shown to enhance the MoS2 channel mobility. As a result, an on/off current ratio of over 107, a subthreshold slope of 276 mV dec-1, and a field-effect electron mobility of 12.1 cm2 V-1 s-1 have been achieved. The maximum drain current of the MOSFET with a top-gate length of 4 μm and a source/drain spacing of 9 μm is measured to be 1.4 μA μm-1 at V DS = 5 V. The gate leakage current is below 10-2 A cm-2 under a gate bias of 10 V. A high dielectric breakdown field of 4.9 MV cm-1 is obtained. Gate hysteresis and frequency-dependent capacitance-voltage measurements were also performed to characterize the ZrO2/MoS2 interface quality, which yielded an interface state density of ˜3 × 1012 cm-2 eV-1.

  20. High-current electron beam coupling to hybrid waveguide and plasma modes in a dielectric Cherenkov maser with a plasma layer

    International Nuclear Information System (INIS)

    Shlapakovski, Anatoli S.

    2002-01-01

    The linear theory of a dielectric Cherenkov maser with a plasma layer has been developed. The dispersion relation has been derived for the model of infinitely thin, fully magnetized, monoenergetic hollow electron beam, in the axisymmetric case. The results of the numerical solution of the dispersion relation and the analysis of the beam coupling to hybrid waves, both hybrid waveguide and hybrid plasma modes, are presented. For the hybrid waveguide mode, spatial growth rate dependences on frequency at different plasma densities demonstrate improvement in gain for moderate densities, but strong shifting the amplification band and narrowing the bandwidth. For the hybrid plasma mode, the case of mildly relativistic, 200-250 keV beams is of interest, so that the wave phase velocity is just slightly greater than the speed of light in a dielectric medium. It has been shown that depending on beam and plasma parameters, the hybrid plasma mode can be separated from the hybrid waveguide mode, or be coupled to it through the beam resulting in strong gain increase, or exhibit a flat gain vs frequency dependence over a very broad band. The parameters, at which the -3 dB bandwidth calculated for 30 dB peak gain exceeds an octave, have been found

  1. Single-layer skull approximations perform well in transcranial direct current stimulation modeling

    NARCIS (Netherlands)

    Rampersad, S.M.; Stegeman, D.F.; Oostendorp, T.F.

    2013-01-01

    In modeling the effect of transcranial direct current stimulation, the representation of the skull is an important factor. In a spherical model, we compared a realistic skull modeling approach, in which the skull consisted of three isotropic layers, to anisotropic and isotropic single-layer

  2. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

    International Nuclear Information System (INIS)

    Jia Yunpeng; Su Hongyuan; Hu Dongqing; Wu Yu; Jin Rui

    2016-01-01

    The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. (paper)

  3. High power laser interaction with single and double layer targets

    Czech Academy of Sciences Publication Activity Database

    Borodziuk, S.; Demchenko, N. N.; Gus'kov, S. Yu.; Jungwirth, Karel; Kálal, M.; Kasperczuk, A.; Kondrashov, V. N.; Králiková, Božena; Krouský, Eduard; Limpouch, Jiří; Mašek, Karel; Pisarczyk, P.; Pisarczyk, T.; Pfeifer, Miroslav; Rohlena, Karel; Rozanov, V. B.; Skála, Jiří; Ullschmied, Jiří

    2005-01-01

    Roč. 35, č. 2 (2005), s. 241-262 ISSN 0078-5466 R&D Projects: GA MŠk(CZ) LN00A100; GA AV ČR(CZ) KSK2043105 Grant - others:EU(XE) HPRI-CT-1999-00053; RFBR(RU) 02-02-16966; IAEA(XE) 11655/RBF; INTAS(XX) 01-0572 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : laser produced plasma * three-frame interferometry * macroparticle * single and double targets * crater * shock wave * laser energy absorption Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.459, year: 2005

  4. Device physics of single layer organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Crone, B.K.; Campbell, I.H.; Davids, P.S.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Neef, C.J.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75080 (United States)

    1999-11-01

    We present experimental and device model results for electron only, hole only, and bipolar organic light-emitting diodes fabricated using a soluble poly ({ital p}-phenylene vinylene) based polymer. Current{endash}voltage (I{endash}V) characteristics were measured for a series of electron only devices in which the polymer thickness was varied. The I{endash}V curves were described using a device model from which the electron mobility parameters were extracted. Similarly, the hole mobility parameters were extracted using a device model description of I{endash}V characteristics for a series of hole only devices where the barrier to hole injection was varied by appropriate choices of hole injecting electrode. The electron and hole mobilities extracted from the single carrier devices are then used, without additional adjustable parameters, to describe the measured current{endash}voltage characteristics of a series of bipolar devices where both the device thickness and contacts were varied. The model successfully describes the I{endash}V characteristics of single carrier and bipolar devices as a function of polymer thickness and for structures that are contact limited, space charge limited, and for cases in between. We find qualitative agreement between the device model and measured external luminance for a thickness series of devices. We investigate the sensitivity of the device model calculations to the magnitude of the bimolecular recombination rate prefactor. {copyright} {ital 1999 American Institute of Physics.}

  5. High dielectric constant and energy density induced by the tunable TiO2 interfacial buffer layer in PVDF nanocomposite contained with core-shell structured TiO2@BaTiO3 nanoparticles

    Science.gov (United States)

    Hu, Penghao; Jia, Zhuye; Shen, Zhonghui; Wang, Peng; Liu, Xiaoru

    2018-05-01

    To realize application in high-capacity capacitors and portable electric devices, large energy density is eagerly desired for polymer-based nanocomposite. The core-shell structured nanofillers with inorganic buffer layer are recently supposed to be promising in improving the dielectric property of polymer nanocomposite. In this work, core-shell structured TO@BT nanoparticles with crystalline TiO2 buffer layer coated on BaTiO3 nanoparticle were fabricated via solution method and heat treatment. The thickness of the TO buffer layer can be tailored by modulating the additive amount of the titanate coupling agent in preparation process, and the apparent dielectric properties of nanocomposite are much related to the thickness of the TO layer. The relatively thin TO layer prefer to generate high polarization to increase dielectric constant while the relatively thick TO layer would rather to homogenize field to maintain breakdown strength. Simulation of electric field distribution in the interfacial region reveals the improving effect of the TO buffer layer on the dielectric properties of nanocomposite which accords with the experimental results well. The optimized nanoparticle TO@BT-2 with a mean thickness of 3-5 nm buffer layer of TO is effective in increasing both the ε and Eb in the PVDF composite film. The maximal discharged energy density of 8.78 J/cm3 with high energy efficiency above 0.6 is obtained in TO@BT-2/PVDF nanocomposite with 2.5 vol% loading close to the breakdown strength of 380 kV/mm. The present study demonstrates the approach to optimize the structure of core-shell nanoparticles by modulating buffer layer and provides a new way to further enlarge energy density in polymer nanocomposite.

  6. Chemical etching of copper foils for single-layer graphene growth by chemical vapor deposition

    Science.gov (United States)

    Yoshihara, Naoki; Noda, Masaru

    2017-10-01

    Chemical etching on copper surface is essential as a pre-treatment for single-layer graphene growth by chemical vapor deposition (CVD). Here, we investigated the effect of chemical etching treatment on copper foils for single-layer graphene CVD growth. The chemical etching conditions, such as the type of chemical etchants and the treatment time, were found to strongly influence the graphene domain size. Moreover, a drastic change in the layer structure of graphene sheets, which was attributed to the surface morphology of the etched copper foil, was confirmed by graphene transmittance and Raman mapping measurements.

  7. Low-temperature phase transition in γ-glycine single crystal. Pyroelectric, piezoelectric, dielectric and elastic properties

    Energy Technology Data Exchange (ETDEWEB)

    Tylczyński, Zbigniew, E-mail: zbigtyl@amu.edu.pl [Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Busz, Piotr [Institute of Molecular Physics, Polish Academy of Science, Smoluchowskiego 17, 60-179 Poznań (Poland)

    2016-11-01

    Temperature changes in the pyroelectric, piezoelectric, elastic and dielectric properties of γ-glycine crystals were studied in the range 100 ÷ 385 K. The pyroelectric coefficient increases monotonically in this temperature range and its value at RT was compared with that of other crystals having glycine molecules. A big maximum in the d14 component of piezoelectric tensor compared by maximum in attenuation of the resonant face-shear mode were observed at 189 K. The components of the elastic stiffness tensor and other components of the piezoelectric tensor show anomalies at this temperature. The components of electromechanical coupling coefficient determined indicate that γ-glycine is a weak piezoelectric. The real and imaginary part of the dielectric constant measured in the direction perpendicular to the trigonal axis show the relaxation anomalies much before 198 K and the activation energies were calculated. These anomalies were interpreted as a result of changes in the NH{sub 3}{sup +} vibrations through electron-phonon coupling of the so called “dynamical transition”. The anomalies of dielectric constant ε*{sub 11} and piezoelectric tensor component d{sub 14} taking place at 335 K are associated with an increase in ac conductivity caused by charge transfer of protons. - Graphical abstract: Imaginary part of dielectric constant in [100] direction. - Highlights: • Piezoelectric, elastic and dielectric constants anomalies were discovered at 189 K. • These anomalies were interpreted as a result of so called “dynamical transition”. • Relaxational dielectric anomaly was explained by the dynamics of glycine molecules. • Pyroelectric coefficient of γ-glycine was determined in a wide temperature range. • Complex dielectric & piezoelectric anomalies at 335 K were caused by protons hopping.

  8. Penetration of a Small Caliber Projectile into Single and Multi-layered Targets

    Directory of Open Access Journals (Sweden)

    Riad A.M.

    2010-06-01

    Full Text Available The normal penetration of armor-piercing projectiles into single and multi-layered steel plates has been investigated. An experimental program has been conducted to study the effect of spaced and in-contact layered targets on their ballistic resistance. Armor piercing projectiles with caliber of 7.62 mm were fired against a series of single and multi-layered steel targets. The projectile impact velocities were ranged from 300-600 m/s, whereas the total thicknesses of the tested single, spaced and in-contact layered steel targets were 3 mm. The penetration process of different tested target configurations has been simulated using Autodayn-2D hydrocode. The experimental measurements of the present work were used to discuss the effect of impact velocity, target configurations and number of layers of different spaced and in-contact layered steel targets on their ballistic resistance. In addition, the post-firing examination of the tested targets over the used impact velocity range showed that the single and each layer of spaced and in-contact laminated steel targets were failed by petalling. Finally, the obtained experimental measurements were compared with the corresponding numerical results of Autodyn-2D hydrocode, good agreement was generally obtained.

  9. Penetration of a Small Caliber Projectile into Single and Multi-layered Targets

    Science.gov (United States)

    Abdel-Wahed, M. A.; Salem, A. M.; Zidan, A. S.; Riad, A. M.

    2010-06-01

    The normal penetration of armor-piercing projectiles into single and multi-layered steel plates has been investigated. An experimental program has been conducted to study the effect of spaced and in-contact layered targets on their ballistic resistance. Armor piercing projectiles with caliber of 7.62 mm were fired against a series of single and multi-layered steel targets. The projectile impact velocities were ranged from 300-600 m/s, whereas the total thicknesses of the tested single, spaced and in-contact layered steel targets were 3 mm. The penetration process of different tested target configurations has been simulated using Autodayn-2D hydrocode. The experimental measurements of the present work were used to discuss the effect of impact velocity, target configurations and number of layers of different spaced and in-contact layered steel targets on their ballistic resistance. In addition, the post-firing examination of the tested targets over the used impact velocity range showed that the single and each layer of spaced and in-contact laminated steel targets were failed by petalling. Finally, the obtained experimental measurements were compared with the corresponding numerical results of Autodyn-2D hydrocode, good agreement was generally obtained.

  10. Selective exfoliation of single-layer graphene from non-uniform graphene grown on Cu

    International Nuclear Information System (INIS)

    Lim, Jae-Young; Lee, Jae-Hyun; Jang, Hyeon-Sik; Whang, Dongmok; Joo, Won-Jae; Hwang, SungWoo

    2015-01-01

    Graphene growth on a copper surface via metal-catalyzed chemical vapor deposition has several advantages in terms of providing high-quality graphene with the potential for scale-up, but the product is usually inhomogeneous due to the inability to control the graphene layer growth. The non-uniform regions strongly affect the reliability of the graphene in practical electronic applications. Herein, we report a novel graphene transfer method that allows for the selective exfoliation of single-layer graphene from non-uniform graphene grown on a Cu foil. Differences in the interlayer bonding energy are exploited to mechanically separate only the top single-layer graphene and transfer this to an arbitrary substrate. The dry-transferred single-layer graphene showed electrical characteristics that were more uniform than those of graphene transferred using conventional wet-etching transfer steps. (paper)

  11. White-light-emitting diode based on a single-layer polymer

    Science.gov (United States)

    Wang, B. Z.; Zhang, X. P.; Liu, H. M.

    2013-05-01

    A broad-band light-emitting diode was achieved in a single-layer device based on pure poly(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFB). Electromer emission was observed in the red with a center wavelength of about 620 nm in electroluminescence (EL) spectrum. This kind of emission exhibits strong dependence on the thickness of the PFB layer, so that the shape of the EL spectrum may be adjusted through changing the thickness of the active polymer layer to balance between the intrinsic PFB emission in the blue and the electromer emission in the red. Thus, white light emission may be achieved from such a single-layer single-material diode.

  12. Modeling of 1-D nitrate transport in single layer soils | Dike | Journal ...

    African Journals Online (AJOL)

    The transport of nitrate in laboratory single soil columns of sand, laterite and clay were investigated after 21 days. The 1-D contaminant transport model by Notodarmojo et al (1991) for single layer soils were calibrated and verified using field data collected from a refuse dump site at avu, owerri, Imo state. The experimental ...

  13. Pressure estimation from single-snapshot tomographic PIV in a turbulent boundary layer

    NARCIS (Netherlands)

    Schneiders, J.F.G.; Pröbsting, S.; Dwight, R.P.; Van Oudheusden, B.W.; Scarano, F.

    2016-01-01

    A method is proposed to determine the instantaneous pressure field from a single tomographic PIV velocity snapshot and is applied to a flat-plate turbulent boundary layer. The main concept behind the single-snapshot pressure evaluation method is to approximate the flow acceleration using the

  14. Gap controlled plasmon-dielectric coupling effects investigated with single nanoparticle-terminated atomic force microscope probes.

    Science.gov (United States)

    Huang, Qian; Teran Arce, Fernando; Lee, Joon; Yoon, Ilsun; Villanueva, Joshua; Lal, Ratnesh; Sirbuly, Donald J

    2016-10-06

    Precise positioning of a plasmonic nanoparticle (NP) near a small dielectric surface is not only necessary for understanding gap-dependent interactions between a metal and dielectric but it is also a critical component in building ultrasensitive molecular rulers and force sensing devices. In this study we investigate the gap-dependent scattering of gold and silver NPs by controllably depositing them on an atomic force microscope (AFM) tip and monitoring their scattering within the evanescent field of a tin dioxide nanofiber waveguide. The enhanced distance-dependent scattering profiles due to plasmon-dielectric coupling effects show similar decays for both gold and silver NPs given the strong dependence of the coupling on the decaying power in the near-field. Experiments and simulations also demonstrate that the NPs attached to the AFM tips act as free NPs, eliminating optical interference typically observed from secondary dielectric substrates. With the ability to reproducibly place individual plasmonic NPs on an AFM tip, and optically monitor near-field plasmon-dielectric coupling effects, this approach allows a wide-variety of light-matter interactions studies to be carried out on other low-dimensional nanomaterials.

  15. Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

    International Nuclear Information System (INIS)

    Tinoco, J.C.; Estrada, M.; Baez, H.; Cerdeira, A.

    2006-01-01

    In this paper we present basic features and oxidation law of the room temperature plasma oxidation (RTPO), as a new process for preparation of less than 2 nm thick layers of SiO 2 , and high-k layers of TiO 2 . We show that oxidation rate follows a potential law dependence on oxidation time. The proportionality constant is function of pressure, plasma power, reagent gas and plasma density, while the exponent depends only on the reactive gas. These parameters are related to the physical phenomena occurring inside the plasma, during oxidation. Metal-Oxide-Semiconductor (MOS) capacitors fabricated with these layers are characterized by capacitance-voltage, current-voltage and current-voltage-temperature measurements. Less than 2.5 nm SiO 2 layers with surface roughness similar to thermal oxide films, surface state density below 3 x 10 11 cm -2 and current density in the expected range for each corresponding thickness, were obtained by RTPO in a parallel-plate reactor, at 180 mW/cm 2 and pressure range between 9.33 and 66.5 Pa (0.07 and 0.5 Torr) using O 2 and N 2 O as reactive gases. MOS capacitors with TiO 2 layers formed by RTPO of sputtered Ti layers are also characterized. Finally, MOS capacitors with stacked layers of TiO 2 over SiO 2 , both layers obtained by RTPO, were prepared and evaluated to determine the feasibility of the use of TiO 2 as a candidate for next technology nodes

  16. Scattering Study of Conductive-Dielectric Nano/Micro-Grained Single Crystals Based on Poly(ethylene glycol, Poly(3-hexyl thiophene and Polyaniline

    Directory of Open Access Journals (Sweden)

    Samira Agbolaghi

    2017-12-01

    Full Text Available Two types of rod-coil block copolymers including poly(3-hexylthiophene-block-poly(ethylene glycol (P3HT-b-PEG and PEG-block-polyaniline (PANI were synthesized using Grignard metathesis polymerization, Suzuki coupling, and interfacial polymerization. Afterward, two types of single crystals were grown by self-seeding methodology to investigate the coily and rod blocks in grafted brushes and ordered crystalline configurations. The conductive P3HT fibrillar single crystals covered by the dielectric coily PEG oligomers were grown from toluene, xylene, and anisole, and characterized by atomic force microscopy (AFM and grazing wide angle X-ray scattering (GIWAXS. Longer P3HT backbones resulted in folding, whereas shorter ones had a high tendency towards backbone lamination. The effective factors on folding of long P3HT backbones in the single crystal structures were the solvent quality and crystallization temperature. Better solvents due to decelerating the growth condition led to a higher number of foldings. Via increasing the crystallization temperature, the system decreased the folding number to maintain its stability. Poorer solvents also reflected a higher stacking in hexyl side chain and π-π stacking directions. The dielectric lamellar PEG single crystals sandwiched between the PANI nanorods were grown from amyl acetate, and analyzed using the interface distribution function (IDF of SAXS and AFM. The molecular weights of PANI and PEG blocks and crystallization temperature were focused while studying the grown single crystals.

  17. Morphology and atomic-scale structure of single-layer WS2 nanoclusters.

    Science.gov (United States)

    Füchtbauer, Henrik G; Tuxen, Anders K; Moses, Poul G; Topsøe, Henrik; Besenbacher, Flemming; Lauritsen, Jeppe V

    2013-10-14

    Two-dimensional sheets of transition metal (Mo and W) sulfides are attracting strong attention due to the unique electronic and optical properties associated with the material in its single-layer form. The single-layer MoS2 and WS2 are already in widespread commercial use in catalytic applications as both hydrotreating and hydrocracking catalysts. Consequently, characterization of the morphology and atomic structure of such particles is of utmost importance for the understanding of the catalytic active phase. However, in comparison with the related MoS2 system only little is known about the fundamental properties of single-layer WS2 (tungstenite). Here, we use an interplay of atom-resolved Scanning Tunneling Microscopy (STM) studies of Au(111)-supported WS2 nanoparticles and calculated edge structures using Density Functional Theory (DFT) to reveal the equilibrium morphology and prevalent edge structures of single-layer WS2. The STM results reveal that the single layer S-W-S sheets adopt a triangular equilibrium shape under the sulfiding conditions of the synthesis, with fully sulfided edges. The predominant edge structures are determined to be the (101[combining macron]0) W-edge, but for the smallest nanoclusters also the (1[combining macron]010) S-edges become important. DFT calculations are used to construct phase diagrams of the WS2 edges, and describe their sulfur and hydrogen coordination under different conditions, and in this way shed light on the catalytic role of WS2 edges.

  18. Dielectric-Spectroscopic and ac Conductivity Investigations on Manganese Doped Layered Na1.9Li0.1Ti3O7 Ceramics

    International Nuclear Information System (INIS)

    Pal, Dharmendra; Pandey, J. L.; Pal, Shri

    2009-01-01

    The dielectric-spectroscopic and ac conductivity studies firstly carried out on layered manganese doped Sodium Lithium Trititanates (Na 1.9 Li 0.1 Ti 3 O 7 ). The dependence of loss tangent (Tanδ), relative permittivity (ε r ) and ac conductivity (σ ac ) in temperature range 373-723K and frequency range 100Hz-1MHz studied on doped derivatives. Various conduction mechanisms are involved during temperature range of study like electronic hopping conduction in lowest temperature region, for MSLT-1 and MSLT-2. The hindered interlayer ionic conduction exists with electronic hopping conduction for MSLT-3. The associated interlayer ionic conduction exists in mid temperature region for all doped derivatives. In highest temperature region modified interlayer ionic conduction along with the polaronic conduction, exist for MSLT-1, MSLT-2, and only modified interlayer ionic conduction for MSLT-3. The loss tangent (Tanδ) in manganese-doped derivatives of layered Na 1.9 Li 0.1 Ti 3 O 7 ceramic may be due to contribution of electric conduction, dipole orientation, and space charge polarization. The corresponding increase in the values of relative permittivity may be due to increase in number of dipoles in the interlayer space while the corresponding decrease in the values of relative permittivity may be due to the increase in the leakage current due to the higher doping

  19. Numerical study of the electro–thermo-convection in an annular dielectric layer subjected to a partial unipolar injection

    International Nuclear Information System (INIS)

    Hassen, Walid; Elkhazen, Mohamed Issam; Traore, Philippe; Borjini, Mohamed Naceur

    2014-01-01

    Highlights: • We investigate numerically the phenomenon of electro–thermo-convection in an annular space. • We show the appearance of a multicellular flow. • We show the enhancement of heat transfer by partial unipolar injection of electric charge. • We analyze the effect of the radius ratio and the electric Rayleigh number on the flow. - Abstract: This article deals with the problem of electro–thermo-hydro-dynamic (ETHD) in a dielectric liquid placed between two horizontal isothermal coaxial cylinders and subjected to the simultaneous action of a thermal gradient and an electric field. The full set of equations describing the combined ETHD flow is directly solved using the control-volume method. The effect of electroconvective motion was investigated in details in the case of strong unipolar injection from the half bottom of the inner cylinder. We focused mainly on enhancing the heat transfer by unipolar injection of electric charge in the dead zone (bottom area) of the annular space. The results show the emergence of a multicellular flow in this dead zone which enhances the heat transfer up to 170%. The flow structure in terms of stream lines, distribution of electric charge density and thermal field is highlighted. The effect of various system parameters in particular the radius ratio, the electric Rayleigh number is investigated too

  20. Investigation of Vacuum Insulator Surface Dielectric Strength with Nanosecond Pulses

    International Nuclear Information System (INIS)

    Nunnally, W.C.; Krogh, M.; Williams, C.; Trimble, D.; Sampayan, S.; Caporaso, G.

    2003-01-01

    The maximum vacuum insulator surface dielectric strength determines the acceleration electric field gradient possible in a short pulse accelerator. Previous work has indicated that higher electric field strengths along the insulator-vacuum interface might be obtained as the pulse duration is decreased. In this work, a 250 kV, single ns wide impulse source was applied to small diameter, segmented insulators samples in a vacuum to evaluate the multi-layer surface dielectric strength of the sample construction. Resonances in the low inductance test geometry were used to obtain unipolar, pulsed electric fields in excess of 100 MV/m on the insulator surface. The sample construction, experimental arrangement and experimental results are presented for the initial data in this work. Modeling of the multi-layer structure is discussed and methods of improving insulator surface dielectric strength in a vacuum are proposed

  1. Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

    Science.gov (United States)

    Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

    2017-03-29

    A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.

  2. On the approximation by single hidden layer feedforward neural networks with fixed weights

    OpenAIRE

    Guliyev, Namig J.; Ismailov, Vugar E.

    2017-01-01

    International audience; Feedforward neural networks have wide applicability in various disciplines of science due to their universal approximation property. Some authors have shown that single hidden layer feedforward neural networks (SLFNs) with fixed weights still possess the universal approximation property provided that approximated functions are univariate. But this phenomenon does not lay any restrictions on the number of neurons in the hidden layer. The more this number, the more the p...

  3. Exposure buildup factors for a cobalt-60 point isotropic source for single and two layer slabs

    International Nuclear Information System (INIS)

    Chakarova, R.

    1992-01-01

    Exposure buildup factors for point isotropic cobalt-60 sources are calculated by the Monte Carlo method with statistical errors ranging from 1.5 to 7% for 1-5 mean free paths (mfp) thick water and iron single slabs and for 1 and 2 mfp iron layers followed by water layers 1-5 mfp thick. The computations take into account Compton scattering. The Monte Carlo data for single slab geometries are approximated by Geometric Progression formula. Kalos's formula using the calculated single slab buildup factors may be applied to reproduce the data for two-layered slabs. The presented results and discussion may help when choosing the manner in which the radiation field gamma irradiation units will be described. (author)

  4. Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

    Directory of Open Access Journals (Sweden)

    S. Karamat

    2015-08-01

    Full Text Available The present competition of graphene electronics demands an efficient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to SiO2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene grains. The presence of different stacking sequences in the graphene layers influence the electronic and optical properties; in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum (FWHM value of 30 cm−1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm−1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm−1, respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm−1 as compare to single layer graphene

  5. Thermal vibration of a rectangular single-layered graphene sheet with quantum effects

    International Nuclear Information System (INIS)

    Wang, Lifeng; Hu, Haiyan

    2014-01-01

    The thermal vibration of a rectangular single-layered graphene sheet is investigated by using a rectangular nonlocal elastic plate model with quantum effects taken into account when the law of energy equipartition is unreliable. The relation between the temperature and the Root of Mean Squared (RMS) amplitude of vibration at any point of the rectangular single-layered graphene sheet in simply supported case is derived first from the rectangular nonlocal elastic plate model with the strain gradient of the second order taken into consideration so as to characterize the effect of microstructure of the graphene sheet. Then, the RMS amplitude of thermal vibration of a rectangular single-layered graphene sheet simply supported on an elastic foundation is derived. The study shows that the RMS amplitude of the rectangular single-layered graphene sheet predicted from the quantum theory is lower than that predicted from the law of energy equipartition. The maximal relative difference of RMS amplitude of thermal vibration appears at the sheet corners. The microstructure of the graphene sheet has a little effect on the thermal vibrations of lower modes, but exhibits an obvious effect on the thermal vibrations of higher modes. The quantum effect is more important for the thermal vibration of higher modes in the case of smaller sides and lower temperature. The relative difference of maximal RMS amplitude of thermal vibration of a rectangular single-layered graphene sheet decreases monotonically with an increase of temperature. The absolute difference of maximal RMS amplitude of thermal vibration of a rectangular single-layered graphene sheet increases slowly with the rising of Winkler foundation modulus.

  6. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Yanfeng; Pan, Chengbin; Hui, Fei; Shi, Yuanyuan; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Zhang, Meiyun; Long, Shibing [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Lian, Xiaojuan; Miao, Feng [National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Larcher, Luca [DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Wu, Ernest [IBM Research Division, Essex Junction, Vermont 05452 (United States)

    2016-01-04

    Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

  7. Double-layer versus single-layer bone-patellar tendon-bone anterior cruciate ligament reconstruction: a prospective randomized study with 3-year follow-up.

    Science.gov (United States)

    Mei, Xiaoliang; Zhang, Zhenxiang; Yang, Jingwen

    2016-12-01

    To evaluate the clinical results of a randomized controlled trial of single-layer versus double-layer bone-patellar tendon-bone (BPTB) anterior cruciate ligament (ACL) reconstruction. Fifty-eight subjects who underwent primary ACL reconstruction with a BPTB allograft were prospectively randomized into two groups: single-layer reconstruction (n = 31) and double-layer reconstruction (n = 27). The following evaluation methods were used: clinical examination, KT-1000 arthrometer measurement, muscle strength, Tegner activity score, Lysholm score, subjective rating scale regarding patient satisfaction and sports performance level, graft retear, contralateral ACL tear, and additional meniscus surgery. Forty-eight subjects (24 in single-layer group and 24 in double-layer group) who were followed up for 3 years were evaluated. Preoperatively, there were no differences between the groups. At 3-year follow-up, the Lachman and pivot-shift test results were better in the double-layer group (P = 0.019 and P reconstruction, double-layer BPTB reconstruction was significantly better than single-layer reconstruction regarding anterior and rotational stability at 3-year follow-up. The results of KT measurements and the Lachman and pivot-shift tests were significantly better in the double-layer group, whereas there was no difference in the anterior drawer test results. The Tegner score was also better in the double-layer group; however, there were no differences in the other subjective findings.

  8. Effect of paramagnetic manganese ions doping on frequency and high temperature dependence dielectric response of layered Na1.9Li0.1Ti3O7 ceramics

    International Nuclear Information System (INIS)

    Pal, Dharmendra; Pandey, J.L.

    2010-01-01

    The manganese doped layered ceramic samples (Na 1.9 Li 0.1 )Ti 3 O 7 : XMn (0.01 ≤ X ≤ 0.1) have been prepared using high temperature solid state reaction. The room temperature electron paramagnetic resonance (EPR) investigations exhibit that at lower percentage of doping the substitution of manganese ions occur as Mn 3+ at Ti 4+ sites, whereas for higher percentage of doping Mn 2+ ions occupy the two different interlayer sodium/lithium sites. In both cases, the charge compensation mechanism should operate to maintain the overall charge neutrality of the lattice. The manganese doped derivatives of layered Na 1.9 Li 0. 1Ti 3 O 7 (SLT) ceramics have been investigated through frequency dependence dielectric spectroscopy in this work. The results indicate that the dielectric losses in these ceramics are the collective contribution of electric conduction, dipole orientation and space charge polarization. Smeared peaks in temperature dependence of permittivity plots suggest diffuse nature of high temperature ferroelectric phase transition. The light manganese doping in SLT enhances the dielectric constant. However, manganese doping decreases dielectric loss due to inhibition of domain wall motion, enhances electron-hopping conduction, and impedes the interlayer ionic conduction as well. Manganese doping also gives rise to contraction of interlayer space. (author)

  9. Composite Beam Cross-Section Analysis by a Single High-Order Element Layer

    DEFF Research Database (Denmark)

    Couturier, Philippe; Krenk, Steen

    2015-01-01

    An analysis procedure of general cross-section properties is presented. The formulation is based on the stress-strain states in the classic six equilibrium modes of a beam by considering a finite thickness slice modelled by a single layer of 3D finite elements. The theory is illustrated by applic...

  10. Electronic spin transport and spin precession in single graphene layers at room temperature

    NARCIS (Netherlands)

    Tombros, Nikolaos; Jozsa, Csaba; Popinciuc, Mihaita; Jonkman, Harry T.; van Wees, Bart J.

    2007-01-01

    Electronic transport in single or a few layers of graphene is the subject of intense interest at present. The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states, has led to the observation of new electronic

  11. Quantum Hall states of atomic Bose gases: Density profiles in single-layer and multilayer geometries

    International Nuclear Information System (INIS)

    Cooper, N. R.; Lankvelt, F. J. M. van; Reijnders, J. W.; Schoutens, K.

    2005-01-01

    We describe the density profiles of confined atomic Bose gases in the high-rotation limit, in single-layer and multilayer geometries. We show that, in a local-density approximation, the density in a single layer shows a landscape of quantized steps due to the formation of incompressible liquids, which are analogous to fractional quantum Hall liquids for a two-dimensional electron gas in a strong magnetic field. In a multilayered setup we find different phases, depending on the strength of the interlayer tunneling t. We discuss the situation where a vortex lattice in the three-dimensional condensate (at large tunneling) undergoes quantum melting at a critical tunneling t c 1 . For tunneling well below t c 1 one expects weakly coupled or isolated layers, each exhibiting a landscape of quantum Hall liquids. After expansion, this gives a radial density distribution with characteristic features (cusps) that provide experimental signatures of the quantum Hall liquids

  12. Single-layer and double-layer microwave absorbers based on Co{sub 67}Ni{sub 33} microspheres and Ni{sub 0.6}Zn{sub 0.4}Fe{sub 2}O{sub 4} nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Min [Engineering Technology Research Center of Magnetic Materials of Anhui Province, School of Physics & Materials Science, Anhui University, Hefei 230601 (China); Wang, Zhongzhu, E-mail: wangzz@ahu.edu.cn [Engineering Technology Research Center of Magnetic Materials of Anhui Province, School of Physics & Materials Science, Anhui University, Hefei 230601 (China); Wang, Peihong; Liao, Yanlin [Engineering Technology Research Center of Magnetic Materials of Anhui Province, School of Physics & Materials Science, Anhui University, Hefei 230601 (China); Bi, Hong [School of Chemistry and Chemical Engineering, Anhui University, Hefei 230601 (China)

    2017-03-01

    Co{sub 67}Ni{sub 33} microspheres and Ni{sub 0.6}Zn{sub 0.4}Fe{sub 2}O{sub 4} nanocrystals were synthesized by hydrothermal method. The complex permeability and complex permittivity of the as-prepared powders dispersing in wax (60 wt% powder) were measured using a vector network analyzer in 2–18 GHz frequency range. The calculated microwave absorption of single-layer and double-layer absorbers based on Co{sub 67}Ni{sub 33} microspheres and Ni{sub 0.6}Zn{sub 0.4}Fe{sub 2}O{sub 4} nanocrystals were analyzed in 2–18 GHz frequency range. The results show that the Ni{sub 0.6}Zn{sub 0.4}Fe{sub 2}O{sub 4}nanocrystals with the relatively low permittivity and Co{sub 67}Ni{sub 33} microspheres with the relatively high dielectric loss and magnetic loss can be used as proper matching layer and excellent absorption layer, respectively. The double-layer absorber with a coating thickness of 2.1 mm exhibits a maximum reflection loss of −43.8 dB as well as a bandwidth (reflection loss less than −10 dB) of 5 GHz. Moreover, their absorption peak and the absorption intensity can be adjusted easily through changing the stacking order and each layer thickness. - Highlights: • Ni-Zn ferrite nanocrystals can use as matching layer in double-layer absorbers. • Co{sub 67}Ni{sub 33} microspheres with high dielectric loss can use as absorption layer. • Double-layer absorbers exhibits an excellent microwave absorption in 2–18 GHz.

  13. The Comparison of Engineering Properties Between Single and Double Layer Porous Asphalt made of Packing Gradation

    Directory of Open Access Journals (Sweden)

    Hardiman M. Y

    2008-01-01

    Full Text Available is paper presents the comparison of engineering properties between single and double layer porous asphalt (SLPA and DLPA made of packing gradation. Three nominal maximum aggregate sizes (NMAS were tested each made up of 10, 14, and 20 mm for SLPA. While for the DLPA with 30, 20, and 15 mm top layer are made of 10 and 14 mm NMAS, with a base layer of 20 mm NMAS. Total thickness of all mixes is 70 mm. Binders used are 60/70 penetration base bitumen and polymer binder styrene-butadiene-styrene (SBS. The result shows that the properties of SLPA mix namely permeability and resistance to abrasion loss decreases when the NMAS in SLPA decreases. The abrasion loss of DLPA mixes increases when the porous asphalt top layer thickness decreases, while drainage time value decreases. However, SLPA with 20 mm NMAS exhibits higher abrasion loss compared to all DLPA mixes.

  14. Flexible thin-layer dielectric barrier discharge plasma treatment of pork butt and beef loin: effects on pathogen inactivation and meat-quality attributes.

    Science.gov (United States)

    Jayasena, Dinesh D; Kim, Hyun Joo; Yong, Hae In; Park, Sanghoo; Kim, Kijung; Choe, Wonho; Jo, Cheorun

    2015-04-01

    The effects of a flexible thin-layer dielectric barrier discharge (DBD) plasma system using a sealed package on microbial inactivation and quality attributes of fresh pork and beef were tested. Following a 10-min treatment, the microbial-load reductions of Listeria monocytogenes, Escherichia coli O157:H7, and Salmonella Typhimurium were 2.04, 2.54, and 2.68 Log CFU/g in pork-butt samples and 1.90, 2.57, and 2.58 Log CFU/g in beef-loin samples, respectively. Colorimetric analysis showed that DBD-plasma treatment did not significantly affect L* values (lightness) of pork and beef samples, but lowered a* values (redness) significantly after 5- and 7.5-min exposures. The plasma treatment significantly influenced lipid oxidation only after a 10-min exposure. The texture of both types of meat was unaffected by plasma treatment. All sensory parameters of treated and non-treated samples were comparable except for taste, which was negatively influenced by the plasma treatment (P quality might be prevented by the use of hurdle technology. Copyright © 2014 Elsevier Ltd. All rights reserved.

  15. ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

    Science.gov (United States)

    Pavlidis, S.; Bayraktaroglu, B.; Leedy, K.; Henderson, W.; Vogel, E.; Brand, O.

    2017-11-01

    The suitability of atomic layer deposited (ALD) titanium oxide (TiO x ) as a top gate dielectric and passivation layer for indium gallium zinc oxide (InGaZnO115) ion sensitive field effect transistors (ISFETs) is investigated. TiO x is an attractive barrier material, but reports of its use for InGaZnO thin film transistor (TFT) passivation have been conflicting thus far. In this work, it is found that the passivated TFT’s behavior depends on the TiO x deposition temperature, affecting critical device characteristics such as threshold voltage, field-effect mobility and sub-threshold swing. An O2 annealing step is required to recover TFT performance post passivation. It is also observed that the positive bias stress response of the passivated TFTs improves compared the original bare device. Secondary ion mass spectroscopy excludes the effects of hydrogen doping and inter-diffusion as sources of the temperature-dependent performance change, therefore indicating that oxygen gettering induced by TiO x passivation is the likely source of oxygen vacancies and, consequently, carriers in the InGaZnO film. It is also shown that potentiometric sensing using ALD TiO x exhibits a near Nernstian response to pH change, as well as minimizes V TH drift in TiO x passivated InGaZnO TFTs immersed in an acidic liquid. These results add to the understanding of InGaZnO passivation effects and underscore the potential for low-temperature fabricated InGaZnO ISFETs to be used as high-performance mobile chemical sensors.

  16. Diffusion of Supercritical Fluids through Single-Layer Nanoporous Solids: Theory and Molecular Simulations.

    Science.gov (United States)

    Oulebsir, Fouad; Vermorel, Romain; Galliero, Guillaume

    2018-01-16

    With the advent of graphene material, membranes based on single-layer nanoporous solids appear as promising devices for fluid separation, be it liquid or gaseous mixtures. The design of such architectured porous materials would greatly benefit from accurate models that can predict their transport and separation properties. More specifically, there is no universal understanding of how parameters such as temperature, fluid loading conditions, or the ratio of the pore size to the fluid molecular diameter influence the permeation process. In this study, we address the problem of pure supercritical fluids diffusing through simplified models of single-layer porous materials. Basically, we investigate a toy model that consists of a single-layer lattice of Lennard-Jones interaction sites with a slit gap of controllable width. We performed extensive equilibrium and biased molecular dynamics simulations to document the physical mechanisms involved at the molecular scale. We propose a general constitutive equation for the diffusional transport coefficient derived from classical statistical mechanics and kinetic theory, which can be further simplified in the ideal gas limit. This transport coefficient relates the molecular flux to the fluid density jump across the single-layer membrane. It is found to be proportional to the accessible surface porosity of the single-layer porous solid and to a thermodynamic factor accounting for the inhomogeneity of the fluid close to the pore entrance. Both quantities directly depend on the potential of mean force that results from molecular interactions between solid and fluid atoms. Comparisons with the simulations data show that the kinetic model captures how narrowing the pore size below the fluid molecular diameter lowers dramatically the value of the transport coefficient. Furthermore, we demonstrate that our general constitutive equation allows for a consistent interpretation of the intricate effects of temperature and fluid loading

  17. Growth, optical, thermal, mechanical and dielectric studies of sodium succinate hexahydrate (β phase) single crystal: A promising third order NLO material

    Science.gov (United States)

    Mageshwari, P. S. Latha; Priya, R.; Krishnan, S.; Joseph, V.; Das, S. Jerome

    2016-11-01

    A third order nonlinear optical (NLO)single crystals of sodium succinate hexahydrate (SSH) (β phase) has been grown by a slow evaporation growth technique using aqueous solution at ambient temperature. The lattice parameters and morphology of SSH were determined by single crystal X-ray diffraction analysis. SSH crystallizes in centrosymmetric monoclinic system with space group P 21 / c and the crystalline purity was analyzed by powder X-ray diffraction analysis. The UV-vis-NIR spectrum reveals that the crystal is transparent in the entire visible region. The recorded FT-IR spectrum verified the presence of various functional groups in the material. NMR analysis of the grown crystal confirms the structural elucidation and detects the major and minor functional groups present in the title compound. ICP-OES analysis proved the presence of sodium in SSH. TG-DTA/DSCanalysis was used to investigate the thermal stability of the material. The dielectric permittivity and dielectric loss of SSH were carried out as a function of frequency for different temperatures and the results were discussed. The mechanical stability was evaluated from Vicker's microhardness test. The third order nonlinear optical properties of SSH has been investigated employing Z-scan technique with He-Ne laser operating at 632.8 nm wavelength.

  18. Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.

    Science.gov (United States)

    Negara, M A; Kitano, M; Long, R D; McIntyre, P C

    2016-08-17

    Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation. A uniform distribution of nitrogen across the resulting AlOxNy films is obtained using N2 plasma enhanced atomic layer deposition (ALD). The flat band voltage (Vfb) increases to a significantly more positive value with increasing nitrogen concentration. Insertion of a 2 nm thick Al2O3 interlayer greatly decreases the trap density of the insulator/GaN interface, and reduces the voltage hysteresis and frequency dispersion of gate capacitance compared to single-layer AlOxNy gate insulators in GaN MOSCAPs.

  19. Dielectric Metamaterials

    Science.gov (United States)

    2015-05-29

    Final Report  29 May 2015 Dielectric Metamaterials SRI Project P21340 ONR Contract N00014-12-1-0722 Prepared by: Srini Krishnamurthy...2 2. Theory of Metamaterials ....................................................................................................... 2 2.1...accurately assess the impact of various forms of disorder on metamaterials (MMs) (both dielectric and metal inclusions); and (5) identify designs

  20. Strong piezoelectricity in single-layer graphene deposited on SiO2 grating substrates.

    Science.gov (United States)

    da Cunha Rodrigues, Gonçalo; Zelenovskiy, Pavel; Romanyuk, Konstantin; Luchkin, Sergey; Kopelevich, Yakov; Kholkin, Andrei

    2015-06-25

    Electromechanical response of materials is a key property for various applications ranging from actuators to sophisticated nanoelectromechanical systems. Here electromechanical properties of the single-layer graphene transferred onto SiO2 calibration grating substrates is studied via piezoresponse force microscopy and confocal Raman spectroscopy. The correlation of mechanical strains in graphene layer with the substrate morphology is established via Raman mapping. Apparent vertical piezoresponse from the single-layer graphene supported by underlying SiO2 structure is observed by piezoresponse force microscopy. The calculated vertical piezocoefficient is about 1.4 nm V(-1), that is, much higher than that of the conventional piezoelectric materials such as lead zirconate titanate and comparable to that of relaxor single crystals. The observed piezoresponse and achieved strain in graphene are associated with the chemical interaction of graphene's carbon atoms with the oxygen from underlying SiO2. The results provide a basis for future applications of graphene layers for sensing, actuating and energy harvesting.

  1. Copper-vapor-assisted chemical vapor deposition for high-quality and metal-free single-layer graphene on amorphous SiO2 substrate.

    Science.gov (United States)

    Kim, Hyungki; Song, Intek; Park, Chibeom; Son, Minhyeok; Hong, Misun; Kim, Youngwook; Kim, Jun Sung; Shin, Hyun-Joon; Baik, Jaeyoon; Choi, Hee Cheul

    2013-08-27

    We report that high-quality single-layer graphene (SLG) has been successfully synthesized directly on various dielectric substrates including amorphous SiO2/Si by a Cu-vapor-assisted chemical vapor deposition (CVD) process. The Cu vapors produced by the sublimation of Cu foil that is suspended above target substrates without physical contact catalyze the pyrolysis of methane gas and assist nucleation of graphene on the substrates. Raman spectra and mapping images reveal that the graphene formed on a SiO2/Si substrate is almost defect-free and homogeneous single layer. The overall quality of graphene grown by Cu-vapor-assisted CVD is comparable to that of the graphene grown by regular metal-catalyzed CVD on a Cu foil. While Cu vapor induces the nucleation and growth of SLG on an amorphous substrate, the resulting SLG is confirmed to be Cu-free by synchrotron X-ray photoelectron spectroscopy. The SLG grown by Cu-vapor-assisted CVD is fabricated into field effect transistor devices without transfer steps that are generally required when SLG is grown by regular CVD process on metal catalyst substrates. This method has overcome two important hurdles previously present when the catalyst-free CVD process is used for the growth of SLG on fused quartz and hexagonal boron nitride substrates, that is, high degree of structural defects and limited size of resulting graphene, respectively.

  2. Characterization of dielectric materials in thin layers for the development of S.O.I. (Silicon on Insulator) substrates

    International Nuclear Information System (INIS)

    Gruber, Olivier

    1999-01-01

    This thesis deals with the characterization of oxide layer placed inside S.O.I. substrates and submitted to irradiation. This type of material is used for the development of hardened electronic components, that is to say components able to be used in a radiative environment. The irradiation induces charges (electrons or holes) in the recovered oxide. A part of these charges is trapped which leads to changes of the characteristics of the electronic components made on these substrates. The main topic of this study is the characterization of trapping properties of recovered oxides and more particularly of 'Unibond' material carried out with a new fabrication process: the 'smart-cut' process. This work is divided into three parts: - study with one carrier: this case is limited to low radiation doses where is only observed holes trapping. The evolution of the physical and chemical properties of the 'Unibond' material recovered oxide has been revealed, this evolution being due to the fabrication process. - Study with two carriers: in this case, there is trapping of holes and electrons. This type of trapping is observed in the case of strong radiation doses. A new type of electrons traps has been identified with the 'Unibond' material oxide. The transport and the trapping of holes and electrons have been studied in the case of transient phenomena created by short radiative pulses. This study has been carried out using a new measurement method. - Study with three carriers: here are added to holes and electrons the protons introduced in the recovered oxide by the annealing under hydrogen. These protons are movable when they are submitted to the effect of an electric field and they induce a memory effect according to their position in the oxide. These different works show that the 'Unibond' material is a very good solution for the future development of S.O.I. (author) [fr

  3. Growth and electronic structure of single-layered transition metal dichalcogenides

    DEFF Research Database (Denmark)

    Dendzik, Maciej

    2016-01-01

    The discovery of graphene has opened a novel research direction focused on the properties of 2D materials. Transition metal dichalcogenides (TMDCs) were quickly identified as important materials due to the great variety of electronic properties that they manifest – properties that are markedly...... different from graphene’s. For example, semiconducting TMDCs undergo an indirectdirect band gap transition when thinned to a single layer (SL); this results in greatly enhanced photoluminescence, making those materials attractive for applications in optoelectronics. Furthermore, metallic TMDCs can host...... TMDCs is directly studied with angle-resolved photoemission spectroscopy (ARPES) and x-ray photoelectron spectroscopy (XPS) techniques. Experimental results are compared with density-functional theory calculations (DFT), both for a free-standing layer and for a layer adsorbed on a metallic substrate...

  4. Towards single photon generation using NV centers in diamond coupled to thin layer optical waveguides

    International Nuclear Information System (INIS)

    Toshiyuki Tashima

    2014-01-01

    Single photon emitters like the nitrogen-vacancy (NV) center in diamond are important for quantum communication such as quantum cryptography and quantum metrology. In this context, e.g. tapered optical nano-fibers are a promising approach as they allow efficient coupling of single photons into a single spatial mode. Yet, integration of such fibers in a compact integrated quantum circuit is demanding. Here we propose a NV defect center in diamond as a single photon emitter coupled to a thin layer photonic waveguide. The benefit is to allow smaller size devices while having a similar strong evanescent field like tapered nano-optical fibers. We present numerical simulations and fabrication steps of such structures. (author)

  5. The dielectric genome of van der Waals heterostructures

    DEFF Research Database (Denmark)

    Andersen, Kirsten; Latini, Simone; Thygesen, Kristian Sommer

    2015-01-01

    with ab-initio accuracy using a multi-scale approach where the dielectric functions of the individual layers (the dielectric building blocks) are coupled simply via their long-range Coulomb interaction. We use the method to illustrate the 2D- 3D dielectric transition in multi-layer MoS2 crystals...

  6. High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

    Directory of Open Access Journals (Sweden)

    Foad Ghasemi

    2017-03-01

    Full Text Available The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 µm2 and 60 µm2. Differential reflectance measurements performed on these crystallites show that the area of the MoS2 crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS2. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large-area chemical vapor deposition (CVD-grown samples.

  7. Edge structures and properties of triangular antidots in single-layer MoS2

    KAUST Repository

    Gan, Li Yong

    2016-08-30

    Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.

  8. A visualization method for probing grain boundaries of single layer graphene via molecular beam epitaxy

    Science.gov (United States)

    Zhan, Linjie; Wan, Wen; Zhu, Zhenwei; Zhao, Zhijuan; Zhang, Zhenhan; Shih, Tien-Mo; Cai, Weiwei

    2017-07-01

    Graphene, a member of layered two-dimensional (2D) materials, possesses high carrier mobility, mechanical flexibility, and optical transparency, as well as enjoying a wide range of promising applications in electronics. Adopting the chemical vaporization deposition method, the majority of investigators have ubiquitously grown single layer graphene (SLG), which inevitably involves polycrystalline properties. Here we demonstrate a simple method for the direct visualization of arbitrarily large-size SLG domains by synthesizing one-hundred-nm-scale MoS2 single crystals via a high-vacuum molecular beam epitaxy process. The present study based on epitaxial growth provides a guide for probing the grain boundaries of various 2D materials and implements higher potentials for the next-generation electronic devices.

  9. Edge structures and properties of triangular antidots in single-layer MoS{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Gan, Li-Yong, E-mail: ganly@swjtu.edu.cn, E-mail: iamyccheng@njtech.edu.cn, E-mail: udo.schwingenschlogl@kaust.edu.sa [Key Laboratory of Advanced Technology of Materials (Ministry of Education), Superconductivity and New Energy R& D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, Yingchun, E-mail: ganly@swjtu.edu.cn, E-mail: iamyccheng@njtech.edu.cn, E-mail: udo.schwingenschlogl@kaust.edu.sa; Huang, Wei [Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials - SICAM, Nanjing Tech University - NanjingTech, 30 South Puzhu Road, Nanjing 211816 (China); Schwingenschlögl, Udo, E-mail: ganly@swjtu.edu.cn, E-mail: iamyccheng@njtech.edu.cn, E-mail: udo.schwingenschlogl@kaust.edu.sa [Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Yao, Yingbang [Advanced Nanofabrication and Imaging Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); School of Materials and Energy, Guangdong University of Technology, Guangdong 510006 (China); Zhao, Yong [Key Laboratory of Advanced Technology of Materials (Ministry of Education), Superconductivity and New Energy R& D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, 610031 Sichuan (China); Zhang, Xi-xiang [Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Advanced Nanofabrication and Imaging Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

    2016-08-29

    Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS{sub 2}. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS{sub 2} samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS{sub 2} devices.

  10. Persistent Charge-Density-Wave Order in Single-Layer TaSe2.

    Science.gov (United States)

    Ryu, Hyejin; Chen, Yi; Kim, Heejung; Tsai, Hsin-Zon; Tang, Shujie; Jiang, Juan; Liou, Franklin; Kahn, Salman; Jia, Caihong; Omrani, Arash A; Shim, Ji Hoon; Hussain, Zahid; Shen, Zhi-Xun; Kim, Kyoo; Min, Byung Il; Hwang, Choongyu; Crommie, Michael F; Mo, Sung-Kwan

    2018-02-14

    We present the electronic characterization of single-layer 1H-TaSe 2 grown by molecular beam epitaxy using a combined angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and density functional theory calculations. We demonstrate that 3 × 3 charge-density-wave (CDW) order persists despite distinct changes in the low energy electronic structure highlighted by the reduction in the number of bands crossing the Fermi energy and the corresponding modification of Fermi surface topology. Enhanced spin-orbit coupling and lattice distortion in the single-layer play a crucial role in the formation of CDW order. Our findings provide a deeper understanding of the nature of CDW order in the two-dimensional limit.

  11. Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling.

    Science.gov (United States)

    Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

    2016-01-07

    Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene.

  12. Identification of excitons, trions and biexcitons in single-layer WS{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Plechinger, Gerd; Nagler, Philipp; Kraus, Julia; Paradiso, Nicola; Strunk, Christoph; Schueller, Christian; Korn, Tobias [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, 93040, Regensburg (Germany)

    2015-08-15

    Single-layer WS{sub 2} is a direct-gap semiconductor showing strong excitonic photoluminescence features in the visible spectral range. Here, we present temperature-dependent photoluminescence measurements on mechanically exfoliated single-layer WS{sub 2}, revealing the existence of neutral and charged excitons at low temperatures as well as at room temperature. By applying a gate voltage, we can electrically control the ratio of excitons and trions and assert a residual n-type doping of our samples. At high excitation densities and low temperatures, an additional peak at energies below the trion dominates the photoluminescence, which we identify as biexciton emission. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Phonon-limited mobility in n-type single-layer MoS2 from first principles

    DEFF Research Database (Denmark)

    Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W.

    2012-01-01

    We study the phonon-limited mobility in intrinsic n-type single-layer MoS2 for temperatures T > 100 K. The materials properties including the electron-phonon interaction are calculated from first principles and the deformation potentials and Frohlich interaction in single-layer MoS2 are establish...

  14. Initial experience with application of single layer modified Kugel mesh for inguinal hernia repair: Case series of 72 consecutive patients

    Directory of Open Access Journals (Sweden)

    Pao-Hwa Chen

    2017-03-01

    Conclusion: The postoperative complication and recurrence rates of single-layer MK mesh herniorrhaphy was comparable with previously reported tension-free repair. Single-layer application is safe and feasible. A longer follow-up period and larger study group with a control group are needed to verify our method.

  15. Nonlinear Localization due to a Double Negative Defect Layer in a One-Dimensional Photonic Crystal Containing Single Negative Material Layers

    International Nuclear Information System (INIS)

    Ali, Munazza Zulfiqar; Abdullah, Tariq

    2008-01-01

    We investigate the effects of introducing a defect layer in a one-dimensional photonic crystal containing single negative material layers on the transmission properties. The width of the defect layer is taken to be the same or smaller than the period of the structure. Different cases of the defect layer being linear or nonlinear and double positive or double negative are discussed. It is found that only a nonlinear double negative layer gives rises to a localized mode within the zero-φ eff gap in this kind of structure. It is also shown that the important characteristics of the nonlinear defect mode such as its frequency, its FWHM and the threshold of the associated bistability can be controlled by changing the widths of the defect layer and the host layers

  16. Two-band induced superconductivity in single-layer graphene and topological insulator bismuth selenide

    Science.gov (United States)

    Talantsev, E. F.; Crump, W. P.; Tallon, J. L.

    2018-01-01

    Proximity-induced superconductivity in single-layer graphene (SLG) and in topological insulators represent almost ideal examples of superconductivity in two dimensions. Fundamental mechanisms governing superconductivity in the 2D limit are of central interest for modern condensed-matter physics. To deduce fundamental parameters of superconductor/graphene/superconductor and superconductor/bismuth selenide/superconductor junctions we investigate the self-field critical currents in these devices using the formalism of the Ambegaokar–Baratoff model. Our central finding is that the induced superconducting state in SLG and bismuth selenide each exhibits gapping on two superconducting bands. Based on recent results obtained on ultra-thin films of natural superconductors, including single-atomic layer of iron selenide, double and triple atomic layers of gallium, and several atomic layer tantalum disulphide, we conclude that a two-band induced superconducting state in SLG and bismuth selenide is part of a wider, more general multiple-band phenomenology of currently unknown origin.

  17. Antifuse with a single silicon-rich silicon nitride insulating layer

    Science.gov (United States)

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  18. Model for a collimated spin wave beam generated by a single layer, spin torque nanocontact

    OpenAIRE

    Hoefer, M. A.; Silva, T. J.; Stiles, M. D.

    2007-01-01

    A model of spin torque induced magnetization dynamics based upon semi-classical spin diffusion theory for a single layer nanocontact is presented. The model incorporates effects due to the current induced Oersted field and predicts the generation of a variety of spatially dependent, coherent, precessional magnetic wave structures. Directionally controllable collimated spin wave beams, vortex spiral waves, and localized standing waves are found to be excited by the interplay of the Oersted fie...

  19. Doping-controlled phase transitions in single-layer MoS2

    Science.gov (United States)

    Zhuang, Houlong L.; Johannes, Michelle D.; Singh, Arunima K.; Hennig, Richard G.

    2017-10-01

    The electronic properties of single-layer MoS2 make it an ideal two-dimensional (2D) material for application in electronic devices. Experiments show that MoS2 can undergo structural phase transitions. Applications of single-layer MoS2 will require firm laboratory control over the phase formation. Here we compare the stability and electronic structure of the three experimentally observed single-layer MoS2 phases, 2 H ,1 T , and 1 T' , and an in-plane metal/semiconductor heterostructure. We reveal by density-functional theory calculations that charge doping can induce the phase transition of single-layer MoS2 from the 2 H to the 1 T structure. Further, the 1 T structure undergoes a second phase transition due to the occurrence of a charge-density wave (CDW). By comparing the energies of several possible resulting CDW structures, we find that the 1 T' orthorhombic structure is the most stable one, consistent with experimental observations and previous theoretical studies. We show that the underlying CDW transition mechanism is not due to Fermi surface nesting, but nonetheless, can be controlled by charge doping. In addition, the stability landscape is highly sensitive to charge doping, which can be used as a practical phase selector. We also provide a prescription for obtaining the 1 T' structure via growth or deposition of MoS2 on a Hf substrate, which transfers electrons uniformly and with minimal structural distortion. Finally, we show that lateral heterostructures formed by the 2 H and 1 T' structures exhibit a low interfacial energy of 0.17 eV/Å, a small Schottky barrier of 0.3 eV for holes, and a large barrier of 1.6 eV for electrons.

  20. Anisotropic carrier mobility in single- and bi-layer C3N sheets

    Science.gov (United States)

    Wang, Xueyan; Li, Qingfang; Wang, Haifeng; Gao, Yan; Hou, Juan; Shao, Jianxin

    2018-05-01

    Based on the density functional theory combined with the Boltzmann transport equation with relaxation time approximation, we investigate the electronic structure and predict the carrier mobility of single- and bi-layer newly fabricated 2D carbon nitrides C3N. Although C3N sheets possess graphene-like planar hexagonal structure, the calculated carrier mobility is remarkably anisotropic, which is found mainly induced by the anisotropic effective masses and deformation potential constants. Importantly, we find that both the electron and hole mobilities are considerable high, for example, the hole mobility along the armchair direction of single-layer C3N sheets can arrive as high as 1.08 ×104 cm2 V-1 s-1, greatly larger than that of C2N-h2D and many other typical 2D materials. Owing to the high and anisotropic carrier mobility and appropriate band gap, single- and bi-layer semiconducting C3N sheets may have great potential applications in high performance electronic and optoelectronic devices.

  1. Learning rate and attractor size of the single-layer perceptron

    International Nuclear Information System (INIS)

    Singleton, Martin S.; Huebler, Alfred W.

    2007-01-01

    We study the simplest possible order one single-layer perceptron with two inputs, using the delta rule with online learning, in order to derive closed form expressions for the mean convergence rates. We investigate the rate of convergence in weight space of the weight vectors corresponding to each of the 14 out of 16 linearly separable rules. These vectors follow zigzagging lines through the piecewise constant vector field to their respective attractors. Based on our studies, we conclude that a single-layer perceptron with N inputs will converge in an average number of steps given by an Nth order polynomial in (t/l), where t is the threshold, and l is the size of the initial weight distribution. Exact values for these averages are provided for the five linearly separable classes with N=2. We also demonstrate that the learning rate is determined by the attractor size, and that the attractors of a single-layer perceptron with N inputs partition R N +R N

  2. Laser-assisted fabrication of single-layer flexible touch sensor

    Science.gov (United States)

    Son, Seokwoo; Park, Jong Eun; Lee, Joohyung; Yang, Minyang; Kang, Bongchul

    2016-10-01

    Single-layer flexible touch sensor that is designed for the indium-tin-oxide (ITO)-free, bendable, durable, multi-sensible, and single layer transparent touch sensor was developed via a low-cost and one-step laser-induced fabrication technology. To this end, an entirely novel approach involving material, device structure, and even fabrication method was adopted. Conventional metal oxides based multilayer touch structure was substituted by the single layer structure composed of integrated silver wire networks of sensors and bezel interconnections. This structure is concurrently fabricated on a glass substitutive plastic film via the laser-induced fabrication method using the low-cost organometallic/nanoparticle hybrid complex. In addition, this study addresses practical solutions to heterochromia and interference problem with a color display unit. As a result, a practical touch sensor is successfully demonstrated through resolving the heterochromia and interference problems with color display unit. This study could provide the breakthrough for early realization of wearable device.

  3. Thermal conductivities of single- and multi-layer phosphorene: a molecular dynamics study.

    Science.gov (United States)

    Zhang, Ying-Yan; Pei, Qing-Xiang; Jiang, Jin-Wu; Wei, Ning; Zhang, Yong-Wei

    2016-01-07

    As a new two-dimensional (2D) material, phosphorene has drawn growing attention owing to its novel electronic properties, such as layer-dependent direct bandgaps and high carrier mobility. Herein we investigate the in-plane and cross-plane thermal conductivities of single- and multi-layer phosphorene, focusing on geometrical (sample size, orientation and layer number) and strain (compression and tension) effects. A strong anisotropy is found in the in-plane thermal conductivity with its value along the zigzag direction being much higher than that along the armchair direction. Interestingly, the in-plane thermal conductivity of multi-layer phosphorene is insensitive to the layer number, which is in strong contrast to that of graphene where the interlayer interactions strongly influence the thermal transport. Surprisingly, tensile strain leads to an anomalous increase in the in-plane thermal conductivity of phosphorene, in particular in the armchair direction. Both the in-plane and cross-plane thermal conductivities can be modulated by external strain; however, the strain modulation along the cross-plane direction is more effective and thus more tunable than that along the in-plane direction. Our findings here are of great importance for the thermal management in phosphorene-based nanoelectronic devices and for thermoelectric applications of phosphorene.

  4. Secretion of wound healing mediators by single and bi-layer skin substitutes.

    Science.gov (United States)

    Maarof, Manira; Law, Jia Xian; Chowdhury, Shiplu Roy; Khairoji, Khairul Anuar; Saim, Aminuddin Bin; Idrus, Ruszymah Bt Hj

    2016-10-01

    Limitations of current treatments for skin loss caused by major injuries leads to the use of skin substitutes. It is assumed that secretion of wound healing mediators by these skin substitutes plays a role in treating skin loss. In our previous study, single layer keratinocytes (SK), single layer fibroblast (SF) and bilayer (BL; containing keratinocytes and fibroblasts layers) skin substitutes were fabricated using fibrin that had shown potential to heal wounds in preclinical studies. This study aimed to quantify the secretion of wound healing mediators, and compare between single and bi-layer skin substitutes. Skin samples were digested to harvest fibroblasts and keratinocytes, and expanded to obtain sufficient cells for the construction of skin substitutes. Acellular fibrin (AF) construct was used as control. Substitutes i.e. AF, SK, SF and BL were cultured for 2 days, and culture supernatant was collected to analyze secretion of wound healing mediators via multiplex ELISA. Among 19 wound healing mediators tested, BL substitute secreted significantly higher amounts of CXCL1 and GCSF compared to SF and AF substitute but this was not significant with respect to SK substitute. The BL substitute also secreted significantly higher amounts of CXCL5 and IL-6 compared to other substitutes. In contrast, the SK substitute secreted significantly higher amounts of VCAM-1 compared to other substitutes. However, all three skin substitutes also secreted CCL2, CCL5, CCL11, GM-CSF, IL8, IL-1α, TNF-α, ICAM-1, FGF-β, TGF-β, HGF, VEGF-α and PDGF-BB factors, but no significant difference was seen. Secretion of these mediators after transplantation may play a significant role in promoting wound healing process for the treatment of skin loss.

  5. Improving the light-emitting properties of single-layered polyfluorene light-emitting devices by simple ionic liquid blending

    Science.gov (United States)

    Horike, Shohei; Nagaki, Hiroto; Misaki, Masahiro; Koshiba, Yasuko; Morimoto, Masahiro; Fukushima, Tatsuya; Ishida, Kenji

    2018-03-01

    This paper describes an evaluation of ionic liquids (ILs) as potential electrolytes for single-layered light-emitting devices with good emission performance. As optoelectronic devices continue to grow in abundance, high-performance light-emitting devices with a single emission layer are becoming increasingly important for low-cost production. We show that a simple technique of osmosing IL into the polymer layer can result in high luminous efficiency and good response times of single-layered light-emitting polymers, even without the additional stacking of charge carrier injection and transport layers. The IL contributions to the light-emission of the polymer are discussed from the perspectives of energy diagrams and of the electric double layers on the electrodes. Our findings enable a faster, cheaper, and lower-in-waste production of light-emitting devices.

  6. Single layered flexible photo-detector based on perylene/graphene composite through printed technology

    Science.gov (United States)

    Ali, Shawkat; Bae, Jinho; Lee, Chong Hyun

    2015-07-01

    In this paper, a single layered passive photo sensor based on perylene/graphene composite is proposed, which is deposited in comb type silver electrodes separated as 50 μm spacing. To increase an electrical conductivity of the proposed sensor, perylene and graphene are blended. Photo sensing layer (120nm thick) and Silver electrodes (50 μm width, 350 nm thick) are deposited on poly(ethylene terephthalate) (PET) substrate through electro-hydrodynamic (EHD) system. The proposed photo sensor detects a terminal resistance inversely varied by an incident light in the range between 78 GΩ in dark and 25 GΩ at light intensity of 400lux. The device response is maximum at 465 nm ~ 535 nm wavelength range at blue light. The device exhibited bendability up to 4mm diameter for 1000 endurance cycles. The surface morphology analysis is carried out with FE-SEM and microscope.

  7. Pattern formation in single-phase FAC. A stability analysis of an oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    Zinemanas, Daniel [The Israel Electric Corp., Haifa (Israel). Dept. of Chemistry; Herszage, Amiel [The Israel Electric Corp., Haifa (Israel). Dept. of Energy Technologies Development

    2013-03-15

    Pattern formation is a salient characteristic of the flow-accelerated corrosion process, particularly in single-phase flow, where a typical ''orange peel'' surface texture is normally formed. The process of such pattern formation is, however, not well understood. In order to gain some insight into the role of the various processes and parameters involved in this process, a linear stability analysis of an oxide layer based on the Sanchez-Caldera model was performed. According to the results obtained in this study, it follows that the oxide layer is stable regarding perturbations of the oxide thickness or the reaction constant, but it is unstable in respect to perturbations of the mass transfer coefficient. These results suggest therefore that the flow, and not local surface in homogeneities, plays a central role in the pattern formation process. (orig.)

  8. Conceptual Design of a Single-Aisle Turboelectric Commercial Transport With Fuselage Boundary Layer Ingestion

    Science.gov (United States)

    Welstead, Jason R.; Felder, James L.

    2016-01-01

    A single-aisle commercial transport concept with a turboelectric propulsion system architecture was developed assuming entry into service in 2035 and compared to a similar technology conventional configuration. The turboelectric architecture consisted of two underwing turbofans with generators extracting power from the fan shaft and sending it to a rear fuselage, axisymmetric, boundary layer ingesting fan. Results indicate that the turbo- electric concept has an economic mission fuel burn reduction of 7%, and a design mission fuel burn reduction of 12% compared to the conventional configuration. An exploration of the design space was performed to better understand how the turboelectric architecture changes the design space, and system sensitivities were run to determine the sensitivity of thrust specific fuel consumption at top of climb and propulsion system weight to the motor power, fan pressure ratio, and electrical transmission efficiency of the aft boundary layer ingesting fan.

  9. An optical, electrical and ultrasonic layered single sensor for ingredient measurement in liquid

    International Nuclear Information System (INIS)

    Kimoto, A; Kitajima, T

    2010-01-01

    In this paper, an optical, electrical and ultrasonic layered single sensor is proposed as a new, non-invasive sensing method for the measurement of ingredients in liquid, particularly in the food industry. In the proposed sensor, the photo sensors and the PVDF films with the transparent conductive electrode are layered and the optical properties of the liquid are measured by a light emitting diode (LED) and a phototransistor (PT). In addition, the electrical properties are measured by indium tin oxide (ITO) film electrodes as the transparent conductive electrodes of PVDF films arranged on the surfaces of the LED and PT. Moreover, the ultrasonic properties are measured by PVDF films. Thus, the optical, electrical and ultrasonic properties in the same space of the liquid can be simultaneously measured at a single sensor. To test the sensor experimentally, three parameters of the liquid—such as concentrations of yellow color, sodium chloride (NaCl) and ethanol in distilled water—were estimated using the measurement values of the optical, electrical and ultrasonic properties obtained with the proposed sensor. The results suggested that it is possible to estimate the three ingredient concentrations in the same space of the liquid from the optical, electrical and ultrasonic properties measured by the proposed single sensor, although there are still some problems such as measurement accuracy that must be solved

  10. Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

    KAUST Repository

    Tangi, Malleswararao

    2017-09-22

    We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.

  11. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics.

    Science.gov (United States)

    Wu, Wenzhuo; Wang, Lei; Li, Yilei; Zhang, Fan; Lin, Long; Niu, Simiao; Chenet, Daniel; Zhang, Xian; Hao, Yufeng; Heinz, Tony F; Hone, James; Wang, Zhong Lin

    2014-10-23

    The piezoelectric characteristics of nanowires, thin films and bulk crystals have been closely studied for potential applications in sensors, transducers, energy conversion and electronics. With their high crystallinity and ability to withstand enormous strain, two-dimensional materials are of great interest as high-performance piezoelectric materials. Monolayer MoS2 is predicted to be strongly piezoelectric, an effect that disappears in the bulk owing to the opposite orientations of adjacent atomic layers. Here we report the first experimental study of the piezoelectric properties of two-dimensional MoS2 and show that cyclic stretching and releasing of thin MoS2 flakes with an odd number of atomic layers produces oscillating piezoelectric voltage and current outputs, whereas no output is observed for flakes with an even number of layers. A single monolayer flake strained by 0.53% generates a peak output of 15 mV and 20 pA, corresponding to a power density of 2 mW m(-2) and a 5.08% mechanical-to-electrical energy conversion efficiency. In agreement with theoretical predictions, the output increases with decreasing thickness and reverses sign when the strain direction is rotated by 90°. Transport measurements show a strong piezotronic effect in single-layer MoS2, but not in bilayer and bulk MoS2. The coupling between piezoelectricity and semiconducting properties in two-dimensional nanomaterials may enable the development of applications in powering nanodevices, adaptive bioprobes and tunable/stretchable electronics/optoelectronics.

  12. Crystal Structure, Defects, Magnetic and Dielectric Properties of the Layered Bi3n+1Ti7Fe3n-3O9n+11 Perovskite-Anatase Intergrowths.

    Science.gov (United States)

    Batuk, Dmitry; Batuk, Maria; Filimonov, Dmitry S; Zakharov, Konstantin V; Volkova, Olga S; Vasiliev, Alexander N; Tyablikov, Oleg A; Hadermann, Joke; Abakumov, Artem M

    2017-01-17

    The Bi 3n+1 Ti 7 Fe 3n-3 O 9n+11 materials are built of (001) p plane-parallel perovskite blocks with a thickness of n (Ti,Fe)O 6 octahedra, separated by periodic translational interfaces. The interfaces are based on anatase-like chains of edge-sharing (Ti,Fe)O 6 octahedra. Together with the octahedra of the perovskite blocks, they create S-shaped tunnels stabilized by lone pair Bi 3+ cations. In this work, the structure of the n = 4-6 Bi 3n+1 Ti 7 Fe 3n-3 O 9n+11 homologues is analyzed in detail using advanced transmission electron microscopy, powder X-ray diffraction, and Mössbauer spectroscopy. The connectivity of the anatase-like chains to the perovskite blocks results in a 3a p periodicity along the interfaces, so that they can be located either on top of each other or with shifts of ±a p along [100] p . The ordered arrangement of the interfaces gives rise to orthorhombic Immm and monoclinic A2/m polymorphs with the unit cell parameters a = 3a p , b = b p , c = 2(n + 1)c p and a = 3a p , b = b p , c = 2(n + 1)c p - a p , respectively. While the n = 3 compound is orthorhombic, the monoclinic modification is more favorable in higher homologues. The Bi 3n+1 Ti 7 Fe 3n-3 O 9n+11 structures demonstrate intricate patterns of atomic displacements in the perovskite blocks, which are supported by the stereochemical activity of the Bi 3+ cations. These patterns are coupled to the cationic coordination of the oxygen atoms in the (Ti,Fe)O 2 layers at the border of the perovskite blocks. The coupling is strong in the n = 3, 4 homologues, but gradually reduces with the increasing thickness of the perovskite blocks, so that, in the n = 6 compound, the dominant mode of atomic displacements is aligned along the interface planes. The displacements in the adjacent perovskite blocks tend to order antiparallel, resulting in an overall antipolar structure. The Bi 3n+1 Ti 7 Fe 3n-3 O 9n+11 materials demonstrate an unusual diversity of structure defects. The n = 4-6 homologues are

  13. On-Chip Waveguide Coupling of a Layered Semiconductor Single-Photon Source.

    Science.gov (United States)

    Tonndorf, Philipp; Del Pozo-Zamudio, Osvaldo; Gruhler, Nico; Kern, Johannes; Schmidt, Robert; Dmitriev, Alexander I; Bakhtinov, Anatoly P; Tartakovskii, Alexander I; Pernice, Wolfram; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf

    2017-09-13

    Fully integrated quantum technology based on photons is in the focus of current research, because of its immense potential concerning performance and scalability. Ideally, the single-photon sources, the processing units, and the photon detectors are all combined on a single chip. Impressive progress has been made for on-chip quantum circuits and on-chip single-photon detection. In contrast, nonclassical light is commonly coupled onto the photonic chip from the outside, because presently only few integrated single-photon sources exist. Here, we present waveguide-coupled single-photon emitters in the layered semiconductor gallium selenide as promising on-chip sources. GaSe crystals with a thickness below 100 nm are placed on Si 3 N 4 rib or slot waveguides, resulting in a modified mode structure efficient for light coupling. Using optical excitation from within the Si 3 N 4 waveguide, we find nonclassicality of generated photons routed on the photonic chip. Thus, our work provides an easy-to-implement and robust light source for integrated quantum technology.

  14. Single-layer centrifugation through colloid selects improved quality of epididymal cat sperm.

    Science.gov (United States)

    Chatdarong, K; Thuwanut, P; Morrell, J M

    2010-06-01

    The objectives were to determine the: 1) extent of epithelial and red blood cell contamination in epididymal cat sperm samples recovered by the cutting method; 2) efficacy of simple washing, single-layer centrifugation (SLC), and swim-up for selecting epididymal cat sperm; and 3) effects of freezing and thawing on cat sperm selected by various techniques. Ten unit samples were studied; each contained sperm from the cauda epididymides of four cats (total, approximately 200 x 10(6) sperm) and was equally allocated into four treatments: 1) simple washing, 2) single-layer centrifugation through colloid prior to cryopreservation (SLC-PC), 3) single-layer centrifugation through colloid after cryopreservation (SLC-AC), and 4) swim-up. Centrifugation (300 x g for 20 min) was done for all methods. The SLC-PC had a better recovery rate than the SLC-AC and swim-up methods (mean+/-SD of 16.4+/-8.7, 10.7+/-8.9, and 2.3+/-1.7%, respectively; Pblood cell contamination than simple washed samples (0.02+/-0.01, 0.02+/-0.04, 0.03+/-0.04, and 0.44+/-0.22 x 10(6) cells/mL, respectively; P0.05), SLC-PC yielded the highest percentage of sperm with normal midpieces and tails (P0.05). In conclusion, both SLC-PC and swim-up improved the quality of epididymal cat sperm, including better morphology, membrane and DNA integrity, and removal of cellular contamination. However, SLC had a better sperm recovery rate than swim-up. 2010 Elsevier Inc. All rights reserved.

  15. Spin effects in MoS{sub 2} and WS{sub 2} single layers

    Energy Technology Data Exchange (ETDEWEB)

    Kioseoglou, G. [Department of Materials Science and Technology, University of Crete, Heraklion (Greece); Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology Hellas (FORTH), Heraklion, Crete (Greece); Korkusinski, M. [Quantum Theory Group, Emerging Technologies Division, National Research Council, Ottawa, ON (Canada); Scrace, T. [University at Buffalo, SUNY, Buffalo, NY (United States); Hanbicki, A.T.; Currie, M.; Jonker, B.T.; Petrou, A. [Naval Research Laboratory, Washington, DC (United States); Hawrylak, P. [Quantum Theory Group, Emerging Technologies Division, National Research Council, Ottawa, ON (Canada); Department of Physics, University of Ottawa, ON (Canada)

    2016-01-15

    Replacing the two sublattices of carbon atoms in graphene with transition metal atoms and chalcogenide dimers results in single layers of transition metal dichalcogenides (TMDCs). TMDCs are promising new materials for light and energy harvesting, transistors, sensors and quantum information processing. One way to access the distinctive functionality of these materials is via their optical selection rules. In particular, light with positive or negative helicity is absorbed differently, therefore, understanding the interaction of circularly polarized light with various TMDCs should enable future applications. Using the examples of MoS{sub 2} and WS{sub 2} we summarize some recent results that illustrate the potential of these materials. First, when optically excited with circularly polarized light, single layers of MoS{sub 2} can emit light with an appreciable polarization. Depolarization mechanisms can be subsequently explored by monitoring the polarization of emitted photoluminescence as a function of the excess energy supplied to the system. As the energy of the pumping light increases further from the emission channel, the emission quickly becomes depolarized. The dominant relaxation mechanism is identified as phonon-assisted intervalley scattering. In single layers of WS{sub 2} containing electron gas, the main emission channel is from negatively charged excitons, or trions. In the presence of a two-dimensional electron gas this trion emission is circularly polarized at zero magnetic field, even when excited with linearly polarized light. This spontaneous circular polarization of the trion has a linear dependence on magnetic field and can be attributed to the existence of a valley polarized state of the two-dimensional electron gas. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. A learning rule for very simple universal approximators consisting of a single layer of perceptrons.

    Science.gov (United States)

    Auer, Peter; Burgsteiner, Harald; Maass, Wolfgang

    2008-06-01

    One may argue that the simplest type of neural networks beyond a single perceptron is an array of several perceptrons in parallel. In spite of their simplicity, such circuits can compute any Boolean function if one views the majority of the binary perceptron outputs as the binary output of the parallel perceptron, and they are universal approximators for arbitrary continuous functions with values in [0,1] if one views the fraction of perceptrons that output 1 as the analog output of the parallel perceptron. Note that in contrast to the familiar model of a "multi-layer perceptron" the parallel perceptron that we consider here has just binary values as outputs of gates on the hidden layer. For a long time one has thought that there exists no competitive learning algorithm for these extremely simple neural networks, which also came to be known as committee machines. It is commonly assumed that one has to replace the hard threshold gates on the hidden layer by sigmoidal gates (or RBF-gates) and that one has to tune the weights on at least two successive layers in order to achieve satisfactory learning results for any class of neural networks that yield universal approximators. We show that this assumption is not true, by exhibiting a simple learning algorithm for parallel perceptrons - the parallel delta rule (p-delta rule). In contrast to backprop for multi-layer perceptrons, the p-delta rule only has to tune a single layer of weights, and it does not require the computation and communication of analog values with high precision. Reduced communication also distinguishes our new learning rule from other learning rules for parallel perceptrons such as MADALINE. Obviously these features make the p-delta rule attractive as a biologically more realistic alternative to backprop in biological neural circuits, but also for implementations in special purpose hardware. We show that the p-delta rule also implements gradient descent-with regard to a suitable error measure

  17. Valley polarization in magnetically doped single-layer transition-metal dichalcogenides

    KAUST Repository

    Cheng, Yingchun

    2014-04-28

    We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.

  18. Atomic-scale structure of single-layer MoS2 nanoclusters

    DEFF Research Database (Denmark)

    Helveg, S.; Lauritsen, J. V.; Lægsgaard, E.

    2000-01-01

    We have studied using scanning tunneling microscopy (STM) the atomic-scale realm of molybdenum disulfide (MoS2) nanoclusters, which are of interest as a model system in hydrodesulfurization catalysis. The STM gives the first real space images of the shape and edge structure of single-layer MoS2 n...... nanoparticles synthesized on Au(lll), and establishes a new picture of the active edge sires of the nanoclusters. The results demonstrate a way to get detailed atomic-scale information on catalysts in general....

  19. Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Larcher, L.; Visconti, A.; Bonanomi, M.

    2006-01-01

    A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices

  20. Highly simplified small molecular phosphorescent organic light emitting devices with a solution-processed single layer

    Directory of Open Access Journals (Sweden)

    Zhaokui Wang

    2011-09-01

    Full Text Available A highly simplified single layer solution-processed phosphorescent organic light emitting device (PHOLED with the maximum ηP 11.5 lm/W corresponding to EQE 9.6% has been demonstrated. The solution-processed device is shown having comparable even exceeding device performance to vacuum-processed PHOLED. The simplified device design strategy represents a pathway toward large area, low cost and high efficiency OLEDs in the future. The charge injection and conduction mechanisms in two solution- and vacuum-processed devices are also investigated by evaluating the temperature dependence of current density – voltage characteristics.

  1. Self-Assembly of Single-Layer CoAl-Layered Double Hydroxide Nanosheets on 3D Graphene Network Used as Highly Efficient Electrocatalyst for Oxygen Evolution Reaction.

    Science.gov (United States)

    Ping, Jianfeng; Wang, Yixian; Lu, Qipeng; Chen, Bo; Chen, Junze; Huang, Ying; Ma, Qinglang; Tan, Chaoliang; Yang, Jian; Cao, Xiehong; Wang, Zhijuan; Wu, Jian; Ying, Yibin; Zhang, Hua

    2016-09-01

    A non-noble metal based 3D porous electrocatalyst is prepared by self-assembly of the liquid-exfoliated single-layer CoAl-layered double hydroxide nanosheets (CoAl-NSs) onto 3D graphene network, which exhibits higher catalytic activity and better stability for electrochemical oxygen evolution reaction compared to the commercial IrO2 nanoparticle-based 3D porous electrocatalyst. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Effect of physicochemical factors on the microplasticity of the surface layer of molybdenum single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Savenko, V.I.; Kuchumova, V.M.; Kochanova, L.A.; Shchukin, E.D.

    1984-07-01

    The microplastic properties of the surface layer of molybdenum single crystals produced by electron-beam zone melting have been investigated experimentaly using ultramicrosclerometry and microindentation techniques. It is found that the 111 plane has the highest susceptibility to plastic damage, while the 100 plane is the hardest. An analysis of the stressed state of the material under an indenter shows that the dislocation density along the loading paths, which characterizes the microplasticity of the material, is largely determined by the crystallography of the lattice, i.e., by the arrangement and the number of effective slip systems in specimens of different orientations. The effect of a monolayer octadecylamine film on the microplastic behavior of molybdenum single crystals is discussed.

  3. A retrospective study comparing the outcome of horses undergoing small intestinal resection and anastomosis with a single layer (Lembert) or double layer (simple continuous and Cushing) technique.

    Science.gov (United States)

    Close, Kristyn; Epstein, Kira L; Sherlock, Ceri E

    2014-05-01

    To (1) compare postoperative complications and survival in horses after small intestinal resection and anastomosis using 2 anastomosis techniques (single layer Lembert; double layer simple continuous oversewn with Cushing), and (2) to compare outcome by anastomosis type (jejunoileostomy; jejunojejunostomy). Retrospective case series. Horses (n = 53). Medical records (July 2006-July 2010) of all horses that had small intestinal resection and anastomosis. Horses were divided into groups based on technique and type of anastomosis. Comparisons of pre- and intraoperative findings (disease severity), postoperative complications, and survival rates were made between groups. There were no differences in disease severity, postoperative complications, or survival between single layer (n = 23) or double layer (n = 31) anastomoses. There were no differences in disease severity or survival between jejunoileostomy (n = 16) or jejunojejunostomy (n = 38). There was a higher incidence of postoperative colic in hospital after jejunoileostomy (13/16) compared with jejunojejunostomy (18/38) (P = .0127). Postoperative complications and survival are comparable between horses undergoing single layer and double layer small intestinal end-to-end anastomoses. With the exception of increased postoperative colic in the hospital, postoperative complications and survival after jejunoileostomy and jejunojejunostomy are also comparable. © Copyright 2014 by The American College of Veterinary Surgeons.

  4. Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10- nanosheet seed layer

    Science.gov (United States)

    Kimura, Junichi; Takuwa, Itaru; Matsushima, Masaaki; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Shiraishi, Takahisa; Konno, Toyohiko J.; Shibata, Tatsuo; Osada, Minoru; Sasaki, Takayoshi; Funakubo, Hiroshi

    2016-02-01

    To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4Ti4O15 films with various film thicknesses were prepared on (100)cSrRuO3/Ca2Nb3O10- nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (ɛr) at room temperature exhibits a negligible degradation as the film thickness decreases to 50 nm, suggesting that ɛr of (001)-oriented CaBi4Ti4O15 is less sensitive to the residual strain. The capacitance density increases monotonously with decreasing film thickness, reaching a value of 4.5 μF/cm2 for a 50-nm-thick nanofilm, and is stable against temperature changes from room temperature to 400 °C irrespective of film thickness. This behaviour differs from that of the widely investigated perovskite-structured dielectrics. These results show that (001)-oriented CaBi4Ti4O15 films derived using Ca2Nb3O10- nanosheets as seed layers can be made candidates for high-temperature capacitor applications by a small change in the dielectric properties against film thickness and temperature variations.

  5. Strength Comparison of Flawed Single-Layer and Multilayer AISI 301 Stainless Steel Pressure Vessels at Cryogenic Temperatures

    National Research Council Canada - National Science Library

    Pierce, William

    1965-01-01

    An experimental investigation was conducted to determine the strengths of single-layer and multilayer scale model tanks of AISI 301 stainless steel containing sharp notches and having the same total wall thickness...

  6. Effect of Substrate Permittivity and Thickness on Performance of Single-Layer, Wideband, U-Slot Antennas on Microwave Substrates

    National Research Council Canada - National Science Library

    Natarajan, V; Chatterjee, D

    2004-01-01

    This paper presents effects of substrate permittivity and thickness on the performance characteristics like impedance bandwidth, radiation efficiency and gain of a single-layer, wideband, U-slot antenna...

  7. Growth, composition and dielectric properties of Pb{sub 3}Ni{sub 1.5}Mn{sub 5.5}O{sub 15} single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Tomov, V; Milenov, T I; Nikolova, R P; Avdeev, G V; Rafailov, P M, E-mail: vixren@gmail.com

    2010-11-15

    Single crystals of Pb{sub 3}Ni{sub 1.5}Mn{sub 5.5}O{sub 15} were successfully grown by the high temperature solution growth method. Their composition was determined by energy dispersive X-ray analysis. The phase homogeneity of the grown crystals was examined and confirmed by powder X-ray phase analysis. The structure was characterized by X-ray single crystal diffractometry and was indexed in the trigonal space group P-3c1 (No. 165) with lattice parameters a = 9.9142(2) A and c = 13.4923(18) A. The dielectric properties of Pb{sub 3}Ni{sub 1.4}Mn{sub 5.6}O{sub 15} were investigated in the temperature range 150 - 500 K. The AC -measurements were carried out for 3 different frequencies: 10 kHz, 100 kHz and 1 MHz. From the DC measurements thermal activation energy was estimated.

  8. Studies on growth, structural, dielectric, laser damage threshold, linear and nonlinear optical properties of methylene blue admixtured L-arginine phosphate single crystal

    Science.gov (United States)

    Peramaiyan, G.; Pandi, P.; Bhagavannarayana, G.; Mohan Kumar, R.

    2012-12-01

    L-Arginine phosphate (LAP) and methylene blue dye admixtured L-arginine phosphate single crystals were grown by slow cooling technique and their cell parameters, crystalline perfection, dopant inclusion were confirmed by single crystal, powder X-ray diffraction and high resolution X-ray diffraction analyses respectively. The modes of vibrations of different functional groups present in pure and dye admixtured LAP crystals have been identified by FTIR spectral analysis. The UV-Vis-NIR spectral study was performed on the grown crystals and found that the crystals are transparent in the entire visible-NIR region. The dielectric measurement was carried out on the grown crystals as a function of frequency at room temperature. The microhardness hardness study on (1 0 0) plane of grown crystals reveals the mechanical behavior of the crystals. The laser damage threshold value significantly enhanced for dye admixtured crystal in comparison with pure LAP crystal. The relative SHG efficiency of methylane blue admixtured LAP crystal was found to be 1.3 times higher than that of pure LAP crystal.

  9. Determination of band offsets at GaN/single-layer MoS2 heterojunction

    KAUST Repository

    Tangi, Malleswararao

    2016-07-25

    We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

  10. Electronic origin of high-temperature superconductivity in single-layer FeSe superconductor.

    Science.gov (United States)

    Liu, Defa; Zhang, Wenhao; Mou, Daixiang; He, Junfeng; Ou, Yun-Bo; Wang, Qing-Yan; Li, Zhi; Wang, Lili; Zhao, Lin; He, Shaolong; Peng, Yingying; Liu, Xu; Chen, Chaoyu; Yu, Li; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Chen, Chuangtian; Xu, Zuyan; Hu, Jiangping; Chen, Xi; Ma, Xucun; Xue, Qikun; Zhou, X J

    2012-07-03

    The recent discovery of high-temperature superconductivity in iron-based compounds has attracted much attention. How to further increase the superconducting transition temperature (T(c)) and how to understand the superconductivity mechanism are two prominent issues facing the current study of iron-based superconductors. The latest report of high-T(c) superconductivity in a single-layer FeSe is therefore both surprising and significant. Here we present investigations of the electronic structure and superconducting gap of the single-layer FeSe superconductor. Its Fermi surface is distinct from other iron-based superconductors, consisting only of electron-like pockets near the zone corner without indication of any Fermi surface around the zone centre. Nearly isotropic superconducting gap is observed in this strictly two-dimensional system. The temperature dependence of the superconducting gap gives a transition temperature T(c)~ 55 K. These results have established a clear case that such a simple electronic structure is compatible with high-T(c) superconductivity in iron-based superconductors.

  11. Retrieving 4-dimensional atmospheric boundary layer structure from surface observations and profiles over a single station

    Energy Technology Data Exchange (ETDEWEB)

    Pu, Zhaoxia [Univ. of Utah, Salt Lake City, UT (United States)

    2015-10-06

    Most routine measurements from climate study facilities, such as the Department of Energy’s ARM SGP site, come from individual sites over a long period of time. While single-station data are very useful for many studies, it is challenging to obtain 3-dimensional spatial structures of atmospheric boundary layers that include prominent signatures of deep convection from these data. The principal objective of this project is to create realistic estimates of high-resolution (~ 1km × 1km horizontal grids) atmospheric boundary layer structure and the characteristics of precipitating convection. These characteristics include updraft and downdraft cumulus mass fluxes and cold pool properties over a region the size of a GCM grid column from analyses that assimilate surface mesonet observations of wind, temperature, and water vapor mixing ratio and available profiling data from single or multiple surface stations. The ultimate goal of the project is to enhance our understanding of the properties of mesoscale convective systems and also to improve their representation in analysis and numerical simulations. During the proposed period (09/15/2011–09/14/2014) and the no-cost extension period (09/15/2014–09/14/2015), significant accomplishments have been achieved relating to the stated goals. Efforts have been extended to various research and applications. Results have been published in professional journals and presented in related science team meetings and conferences. These are summarized in the report.

  12. Single layer porous media with entrapped minerals for microscale studies of multiphase flow.

    Science.gov (United States)

    Liefferink, R W; Naillon, A; Bonn, D; Prat, M; Shahidzadeh, N

    2018-03-27

    The behaviour of minerals (i.e. salts) such as sodium chloride and calcite in porous media is very important in various applications such as weathering of artworks, oil recovery and CO2 sequestration. We report a novel method for manufacturing single layer porous media in which minerals can be entrapped in a controlled way in order to study their dissolution and recrystallization. In addition, our manufacturing method is a versatile tool for creating monomodal, bimodal or multimodal pore size microporous media with controlled porosity ranging from 25% to 50%. These micromodels allow multiphase flows to be quantitatively studied with different microscopy techniques and can serve to validate numerical models that can subsequently be extended to the 3D situation where visualization is experimentally difficult. As an example of their use, deliquescence (dissolution by moisture absorption) of entrapped NaCl crystals is studied; our results show that the invasion of the resulting salt solution is controlled by the capillary pressure within the porous network. For hydrophilic porous media, the liquid preferentially invades the small pores whereas in a hydrophobic network the large pores are filled. Consequently, after several deliquescence/drying cycles in the hydrophilic system, the salt is transported towards the outside of the porous network via small pores; in hydrophobic micromodels, no salt migration is observed. Numerical simulations based on the characteristics of our single layer pore network agree very well with the experimental results and give more insight into the dynamics of salt transport through porous media.

  13. Charge transferred doping of single layer graphene by mono-dispersed manganese-oxide nanoparticles adsorption

    Science.gov (United States)

    Phan, Thanh Luan; Kang, Myunggoo; Choi, Soo Ho; Kim, You Joong; Jung, Hyun; Yoon, Im Taek; Yang, Woochul

    2017-10-01

    We report an efficient and controllable method to introduce p-type doping in graphene by decoration with Mn3O4 nanoparticles (NPs) on mechanically exfoliated single layer graphene. A monolayer of Mn3O4 NPs, with a diameter in the range of 5-10 nm, was decorated on a graphene film using an ex-situ method, whereas by controlling the coverage of the NPs on the graphene surface, the carrier concentration could be continually adjusted. The p-type of the NP-decorated single layer graphene was confirmed by the Raman G-band. It was found that the carrier concentration could be gradually adjusted up to 26.09 × 1012 cm-2, with 90% coverage of Mn3O4 NPs. The Dirac point of the pristine graphene at the gate bias of 27 V shifted to 150 V for Mn3O4 NP decorated graphene. The p-type graphene doped with Mn3O4 NPs demonstrated significant high air-stability, even under an oxygen atmosphere for 60 days. This approach allows for the opportunity for simple, scalable, and highly stable doping of graphene for future high-performance electronic device applications.

  14. Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

    KAUST Repository

    Wan, Yi

    2017-12-19

    Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.

  15. Tuning the band structure and superconductivity in single-layer FeSe by interface engineering.

    Science.gov (United States)

    Peng, R; Xu, H C; Tan, S Y; Cao, H Y; Xia, M; Shen, X P; Huang, Z C; Wen, C H P; Song, Q; Zhang, T; Xie, B P; Gong, X G; Feng, D L

    2014-09-26

    The interface between transition metal compounds provides a rich playground for emergent phenomena. Recently, significantly enhanced superconductivity has been reported for single-layer FeSe on Nb-doped SrTiO3 substrate. Yet it remains mysterious how the interface affects the superconductivity. Here we use in situ angle-resolved photoemission spectroscopy to investigate various FeSe-based heterostructures grown by molecular beam epitaxy, and uncover that electronic correlations and superconducting gap-closing temperature (Tg) are tuned by interfacial effects. Tg up to 75 K is observed in extremely tensile-strained single-layer FeSe on Nb-doped BaTiO3, which sets a record high pairing temperature for both Fe-based superconductor and monolayer-thick films, providing a promising prospect on realizing more cost-effective superconducting device. Moreover, our results exclude the direct correlation between superconductivity and tensile strain or the energy of an interfacial phonon mode, and highlight the critical and non-trivial role of FeSe/oxide interface on the high Tg, which provides new clues for understanding its origin.

  16. Gold Dispersion and Activation on the Basal Plane of Single-Layer MoS2

    KAUST Repository

    Merida, Cindy S.

    2017-12-09

    Gold islands are typically associated with high binding affinity to adsorbates and catalytic activity. Here we present the growth of such dispersed nanoscale gold islands on single layer MoS2, prepared on an inert SiO2/Si support by chemical vapor deposition (CVD). This study offers a combination of growth process development, optical characterization, photoelectron spectroscopy at sub-micron spatial resolution, and advanced density functional theory modeling for detailed insight into the electronic interaction between gold and single-layer MoS2. In particular, we find the gold density of states in Au/MoS2/SiO2/Si to be far less well-defined than Au islands on other 2-dimensional materials such as graphene, for which we also provide data. We attribute this effect to the presence of heterogeneous Au adatom/MoS2-support interactions within the nanometer-scale gold cluster. As a consequence, theory predicts that CO will exhibit adsorption energies in excess of 1 eV at the Au cluster edges, where the local density of states is dominated by Au 5dz2 symmetry.

  17. Quality of bull spermatozoa after preparation by single-layer centrifugation.

    Science.gov (United States)

    Goodla, Lavanya; Morrell, Jane M; Yusnizar, Yulnawati; Stålhammar, Hans; Johannisson, Anders

    2014-01-01

    The present study aimed to evaluate the effect of single-layer centrifugation (SLC) through a species-specific colloid (Androcoll-B; patent pending, J. M. Morrell) on bull sperm quality. Computer-assisted sperm analysis of motility and flow cytometric analysis of sperm viability (SYBR-14/propidium iodide staining), chromatin integrity (acridine orange staining), reactive oxygen species production [Hoechst 33258-hydroethidine-2',7'-dichlorodihydrofluorescein diacetate (HO-HE-DCFDA) staining], mitochondrial membrane potential (staining with JC-1 probe), and protein tyrosine phosphorylation (specific antibody staining) were performed on unselected and SLC-selected sperm samples. Single-layer centrifugation of bull spermatozoa resulted in the selection of a sperm population that had high mitochondrial membrane potential, a higher content of phosphorylated protein, and more reactive oxygen species than control samples. Sperm chromatin damage was lower in the SLC samples although sperm viability and motility did not differ between SLC samples and controls. These observations suggest that SLC of bull semen in a soybean-containing extender improved some, but not all, parameters of sperm quality. Copyright © 2014 American Dairy Science Association. Published by Elsevier Inc. All rights reserved.

  18. Single Layer Nanomaterials: The Chemical Vapor Deposition Synthesis and Atomic Scale Characterization of Hexagonal Boron Nitride and Graphene

    OpenAIRE

    Gibb, Ashley L

    2015-01-01

    The design of novel nanomaterials with tunable geometries and properties has transformed chemistry and physics in recent years. In particular, recent advances in the isolation of two-dimensional films have inspired the exploration and development of stable, self-supporting single layer systems. Most notably graphene, a single layer of hexagonal sp2 carbon, has attracted interest due to intriguing electronic, optical, and mechanical properties. Hexagonal boron nitride (h-BN) is a closely relat...

  19. Magneto-transport in the zero-energy Landau level of single-layer and bilayer graphene

    International Nuclear Information System (INIS)

    Zeitler, U; Giesbers, A J M; Elferen, H J van; Kurganova, E V; McCollam, A; Maan, J C

    2011-01-01

    We present recent low-temperature magnetotransport experiments on single-layer and bilayer graphene in high magnetic field up to 33 T. In single layer graphene the fourfold degeneracy of the zero-energy Landau level is lifted by a gap opening at filling factor ν = 0. In bilayer graphene, we observe a partial lifting of the degeneracy of the eightfold degenerate zero-energy Landau level.

  20. Electronic spin transport and spin precession in single graphene layers at room temperature.

    Science.gov (United States)

    Tombros, Nikolaos; Jozsa, Csaba; Popinciuc, Mihaita; Jonkman, Harry T; van Wees, Bart J

    2007-08-02

    Electronic transport in single or a few layers of graphene is the subject of intense interest at present. The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states, has led to the observation of new electronic transport phenomena such as anomalously quantized Hall effects, absence of weak localization and the existence of a minimum conductivity. In addition to dissipative transport, supercurrent transport has also been observed. Graphene might also be a promising material for spintronics and related applications, such as the realization of spin qubits, owing to the low intrinsic spin orbit interaction, as well as the low hyperfine interaction of the electron spins with the carbon nuclei. Here we report the observation of spin transport, as well as Larmor spin precession, over micrometre-scale distances in single graphene layers. The 'non-local' spin valve geometry was used in these experiments, employing four-terminal contact geometries with ferromagnetic cobalt electrodes making contact with the graphene sheet through a thin oxide layer. We observe clear bipolar (changing from positive to negative sign) spin signals that reflect the magnetization direction of all four electrodes, indicating that spin coherence extends underneath all of the contacts. No significant changes in the spin signals occur between 4.2 K, 77 K and room temperature. We extract a spin relaxation length between 1.5 and 2 mum at room temperature, only weakly dependent on charge density. The spin polarization of the ferromagnetic contacts is calculated from the measurements to be around ten per cent.

  1. Single-Layer Plication for Repair of Diastasis Recti: The Most Rapid and Efficient Technique.

    Science.gov (United States)

    Gama, Luiz José Muaccad; Barbosa, Marcus Vinicius Jardini; Czapkowski, Adriano; Ajzen, Sergio; Ferreira, Lydia Masako; Nahas, Fábio Xerfan

    2017-06-01

    Plication of the anterior rectus sheath is the most commonly used technique for repair of diastasis recti, but is also a time-consuming procedure. The aim of this study was to compare the efficacy and time required to repair diastasis recti using different plication techniques. Thirty women with similar abdominal deformities, who had had at least one pregnancy, were randomized into three groups to undergo abdominoplasty. Plication of the anterior rectus sheath was performed in two layers with 2-0 monofilament nylon suture (control group) or in a single layer with either a continuous 2-0 monofilament nylon suture (group I) or using a continuous barbed suture (group II). Operative time was recorded. All patients underwent ultrasound examination preoperatively and at 3 weeks and 6 months postoperatively to monitor for diastasis recurrence. The force required to bring the anterior rectus sheath to the midline was measured at the supraumbilical and infraumbilical levels. Patient age ranged from 26 to 50 years and body mass index from 20.56 to 29.17 kg/m2. A significant difference in mean operative time was found between the control and study groups (control group, 35 min:22 s; group I, 14 min:22 s; group II, 15 min:23 s; P < 0.001). Three patients in group II had recurrence of diastasis. There were no significant within- and between-group differences in tensile force on the aponeurosis. Plication of the anterior rectus sheath in a single-layer with a continuous suture showed to be an efficient and rapid technique for repair of diastasis recti. © 2017 The American Society for Aesthetic Plastic Surgery, Inc. Reprints and permission: journals.permissions@oup.com

  2. Single-Column Model Simulations of Subtropical Marine Boundary-Layer Cloud Transitions Under Weakening Inversions

    Science.gov (United States)

    Neggers, R. A. J.; Ackerman, A. S.; Angevine, W. M.; Bazile, E.; Beau, I.; Blossey, P. N.; Boutle, I. A.; de Bruijn, C.; Cheng, A.; van der Dussen, J.; Fletcher, J.; Dal Gesso, S.; Jam, A.; Kawai, H.; Cheedela, S. K.; Larson, V. E.; Lefebvre, M.-P.; Lock, A. P.; Meyer, N. R.; de Roode, S. R.; de Rooy, W.; Sandu, I.; Xiao, H.; Xu, K.-M.

    2017-10-01

    Results are presented of the GASS/EUCLIPSE single-column model intercomparison study on the subtropical marine low-level cloud transition. A central goal is to establish the performance of state-of-the-art boundary-layer schemes for weather and climate models for this cloud regime, using large-eddy simulations of the same scenes as a reference. A novelty is that the comparison covers four different cases instead of one, in order to broaden the covered parameter space. Three cases are situated in the North-Eastern Pacific, while one reflects conditions in the North-Eastern Atlantic. A set of variables is considered that reflects key aspects of the transition process, making use of simple metrics to establish the model performance. Using this method, some longstanding problems in low-level cloud representation are identified. Considerable spread exists among models concerning the cloud amount, its vertical structure, and the associated impact on radiative transfer. The sign and amplitude of these biases differ somewhat per case, depending on how far the transition has progressed. After cloud breakup the ensemble median exhibits the well-known "too few too bright" problem. The boundary-layer deepening rate and its state of decoupling are both underestimated, while the representation of the thin capping cloud layer appears complicated by a lack of vertical resolution. Encouragingly, some models are successful in representing the full set of variables, in particular, the vertical structure and diurnal cycle of the cloud layer in transition. An intriguing result is that the median of the model ensemble performs best, inspiring a new approach in subgrid parameterization.

  3. Preparation, characterization and dielectric behaviour of some ...

    Indian Academy of Sciences (India)

    Unknown

    insulating, thus enveloping the semiconductor grains. This gives rise to barrier layer at grain/grain boundary interfaces imparting very high dielectric constant to the resulting material. One therefore expects high dielectric constant and porosity in doped stannates. In this paper, we report the preparation, structural charac-.

  4. PLZT capacitor and method to increase the dielectric constant

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Ralph S.; Fairchild, Manuel Ray; Balachjandran, Uthamalingam; Lee, Tae H.

    2017-12-12

    A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300.degree. C.

  5. Organic Field Effect Transistors with Dipole-Polarized Polymer Gate Dielectrics for Control of Threshold Voltage

    OpenAIRE

    Sakai, Heisuke; Takahashi, Yoshikazu; Murata, Hideyuki

    2007-01-01

    The authors demonstrate organic field effect transistors (OFETs) with a dipole-polarized polyurea for the gate dielectrics. In the dielectrics, the internal electric field induces the mobile charge carrier in the semiconductor layer to the semiconductor-dielectric interface. OFETs with dipole-polarized gate dielectrics exhibit lower threshold voltage. With nonpolarized gate dielectrics, the threshold voltage was -11.4 V, whereas that decreased to -5.3 V with polarized gate dielectrics. In a...

  6. Giant magnetoimpedance effect in sputtered single layered NiFe film and meander NiFe/Cu/NiFe film

    International Nuclear Information System (INIS)

    Chen, L.; Zhou, Y.; Lei, C.; Zhou, Z.M.; Ding, W.

    2010-01-01

    Giant magnetoimpedance (GMI) effect on NiFe thin film is very promising due to its application in developing the magnetic field sensors with highly sensitivity and low cost. In this paper, the single layered NiFe thin film and NiFe/Cu/NiFe thin film with a meander structure are prepared by the MEMS technology. The influences of sputtering parameters, film structure and conductor layer width on GMI effect in NiFe single layer and meander NiFe/Cu/NiFe film are investigated. Maximum of the GMI ratio in single layer and sandwich film is 5% and 64%, respectively. The results obtained are useful for developing the high-performance magnetic sensors based on NiFe thin film.

  7. Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

    International Nuclear Information System (INIS)

    Mroczyński, Robert; Taube, Andrzej; Gierałtowska, Sylwia; Guziewicz, Elżbieta; Godlewski, Marek

    2012-01-01

    The feasibility of the application of double-gate dielectric stacks with fabricated by atomic layer deposited (ALD) HfO 2 and Al 2 O 3 layers in non-volatile semiconductor memory (NVSM) devices was investigated. Significant improvement in retention at elevated temperatures after the application of ALD high-k oxides was demonstrated. Superior memory window (extrapolated at 10 years) of flat-band voltage (U fb ) value of the order of 2.6 V and 4.55 V at 85 °C, for stack with HfO 2 and Al 2 O 3 , respectively, was obtained. Moreover, the analysis of conduction mechanisms in the investigated stacks under negative voltage revealed F-N tunneling in the range of high values of electric field intensity and lowering of barrier height with increasing temperature.

  8. New calibration algorithms for dielectric-based microwave moisture sensors

    Science.gov (United States)

    New calibration algorithms for determining moisture content in granular and particulate materials from measurement of the dielectric properties at a single microwave frequency are proposed. The algorithms are based on identifying empirically correlations between the dielectric properties and the par...

  9. Negative quantum capacitance induced by midgap states in single-layer graphene.

    Science.gov (United States)

    Wang, Lin; Wang, Yang; Chen, Xiaolong; Zhu, Wei; Zhu, Chao; Wu, Zefei; Han, Yu; Zhang, Mingwei; Li, Wei; He, Yuheng; Xiong, Wei; Law, Kam Tuen; Su, Dangsheng; Wang, Ning

    2013-01-01

    We demonstrate that single-layer graphene (SLG) decorated with a high density of Ag adatoms displays the unconventional phenomenon of negative quantum capacitance. The Ag adatoms act as resonant impurities and form nearly dispersionless resonant impurity bands near the charge neutrality point (CNP). Resonant impurities quench the kinetic energy and drive the electrons to the Coulomb energy dominated regime with negative compressibility. In the absence of a magnetic field, negative quantum capacitance is observed near the CNP. In the quantum Hall regime, negative quantum capacitance behavior at several Landau level positions is displayed, which is associated with the quenching of kinetic energy by the formation of Landau levels. The negative quantum capacitance effect near the CNP is further enhanced in the presence of Landau levels due to the magnetic-field-enhanced Coulomb interactions.

  10. Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

    Science.gov (United States)

    Aslan, Ozgur Burak; Ruppert, Claudia; Heinz, Tony

    2015-03-01

    Single- and few-layer crystals of exfoliated MoTe2 have been characterized spectroscopically by photoluminescence, Raman scattering, and optical absorption measurements. We find that MoTe2 in the monolayer limit displays strong photoluminescence. On the basis of complementary optical absorption results, we conclude that monolayer MoTe2 is a direct-gap semiconductor with an optical band gap of 1.10 eV. This new monolayer material extends the spectral range of atomically thin direct-gap materials from the visible to the near-infrared. Supported by the NSF through Grant DMR-1124894 for sample preparation and characterization by the O?ce of Naval Research for analysis. C.R. acknowledges support from the Alexander von Humboldt Foundation.

  11. Effect of humid-thermal environment on wave dispersion characteristics of single-layered graphene sheets

    Science.gov (United States)

    Ebrahimi, Farzad; Dabbagh, Ali

    2018-04-01

    In the present article, the hygro-thermal wave propagation properties of single-layered graphene sheets (SLGSs) are investigated for the first time employing a nonlocal strain gradient theory. A refined higher-order two-variable plate theory is utilized to derive the kinematic relations of graphene sheets. Here, nonlocal strain gradient theory is used to achieve a more precise analysis of small-scale plates. In the framework of the Hamilton's principle, the final governing equations are developed. Moreover, these obtained equations are deemed to be solved analytically and the wave frequency values are achieved. Some parametric studies are organized to investigate the influence of different variants such as nonlocal parameter, length scale parameter, wave number, temperature gradient and moisture concentration on the wave frequency of graphene sheets.

  12. Large theoretical thermoelectric power factor of suspended single-layer MoS{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Babaei, Hasan, E-mail: babaei@illinois.edu, E-mail: babaei@auburn.edu [Mechanical Science and Engineering Department, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-2906 (United States); Mechanical Engineering Department, Auburn University, Auburn, Alabama 36849-5341 (United States); Khodadadi, J. M. [Mechanical Engineering Department, Auburn University, Auburn, Alabama 36849-5341 (United States); Sinha, Sanjiv [Mechanical Science and Engineering Department, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-2906 (United States)

    2014-11-10

    We have calculated the semi-classical thermoelectric power factor of suspended single-layer (SL)- MoS{sub 2} utilizing electron relaxation times derived from ab initio calculations. Measurements of the thermoelectric power factor of SL-MoS{sub 2} on substrates reveal poor power factors. In contrast, we find the thermoelectric power factor of suspended SL-MoS{sub 2} to peak at ∼2.8 × 10{sup 4} μW/m K{sup 2} at 300 K, at an electron concentration of 10{sup 12} cm{sup −2}. This figure is higher than that in bulk Bi{sub 2}Te{sub 3}, for example. Given its relatively high thermal conductivity, suspended SL-MoS{sub 2} may hold promise for in-plane thin-film Peltier coolers, provided reasonable mobilities can be realized.

  13. Moisture barrier properties of single-layer graphene deposited on Cu films for Cu metallization

    Science.gov (United States)

    Gomasang, Ploybussara; Abe, Takumi; Kawahara, Kenji; Wasai, Yoko; Nabatova-Gabain, Nataliya; Thanh Cuong, Nguyen; Ago, Hiroki; Okada, Susumu; Ueno, Kazuyoshi

    2018-04-01

    The moisture barrier properties of large-grain single-layer graphene (SLG) deposited on a Cu(111)/sapphire substrate are demonstrated by comparing with the bare Cu(111) surface under an accelerated degradation test (ADT) at 85 °C and 85% relative humidity (RH) for various durations. The change in surface color and the formation of Cu oxide are investigated by optical microscopy (OM) and X-ray photoelectron spectroscopy (XPS), respectively. First-principle simulation is performed to understand the mechanisms underlying the barrier properties of SLG against O diffusion. The correlation between Cu oxide thickness and SLG quality are also analyzed by spectroscopic ellipsometry (SE) measured on a non-uniform SLG film. SLG with large grains shows high performance in preventing the Cu oxidation due to moisture during ADT.

  14. Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe 2

    KAUST Repository

    Zhang, Chendong

    2015-09-21

    By using a comprehensive form of scanning tunneling spectroscopy, we have revealed detailed quasi-particle electronic structures in transition metal dichalcogenides, including the quasi-particle gaps, critical point energy locations, and their origins in the Brillouin zones. We show that single layer WSe surprisingly has an indirect quasi-particle gap with the conduction band minimum located at the Q-point (instead of K), albeit the two states are nearly degenerate. We have further observed rich quasi-particle electronic structures of transition metal dichalcogenides as a function of atomic structures and spin-orbit couplings. Such a local probe for detailed electronic structures in conduction and valence bands will be ideal to investigate how electronic structures of transition metal dichalcogenides are influenced by variations of local environment.

  15. Polarized dependence of nonlinear susceptibility in a single layer graphene system in infrared region

    Energy Technology Data Exchange (ETDEWEB)

    Solookinejad, G., E-mail: ghsolooki@gmail.com

    2016-09-15

    In this study, the linear and nonlinear susceptibility of a single-layer graphene nanostructure driven by a weak probe light and an elliptical polarized coupling field is discussed theoretically. The Landau levels of graphene can be separated in infrared or terahertz regions under the strong magnetic field. Therefore, by using the density matrix formalism in quantum optic, the linear and nonlinear susceptibility of the medium can be derived. It is demonstrated that by adjusting the elliptical parameter, one can manipulate the linear and nonlinear absorption as well as Kerr nonlinearity of the medium. It is realized that the enhanced Kerr nonlinearity can be possible with zero linear absorption and nonlinear amplification at some values of elliptical parameter. Our results may be having potential applications in quantum information science based on Nano scales devices.

  16. Tensile loading induced phase transition and rippling in single-layer MoS2

    Science.gov (United States)

    Bao, Hongwei; Huang, Yuhong; Yang, Zhi; Miao, Yaping; Chu, Paul K.; Xu, Kewei; Ma, Fei

    2017-05-01

    Molecular dynamics (MD) simulation is performed to study the structural evolution of single-layer MoS2 nanosheets under tensile loading and a phase transition from hexagonal structure to quadrilateral one is observed at a large strain when loaded along the zigzag direction but not along the armchair direction. Density functional theory (DFT) calculation illustrates that the newly generated quadrilateral phase is metallic. Further loading along the zigzag direction promotes an inhomogeneous distribution of lateral and shear stress around the phase boundaries due to local mechanical mismatch. As a result, periodic rippling parallel to the loading direction emerges and the wavelength and wave height change with strain according to λ∼ε-1/4 and h∼ε1/4. Accordingly, a graded distribution of strain can be produced or modulated by a simple tensile loading and the strategy might be utilized to enhance the photoelectrical properties of 2D materials and design strain-tunable nanodevices.

  17. Effect of quenched disorder on charge-orbital-spin ordering in single-layer manganites

    International Nuclear Information System (INIS)

    Uchida, Masaya; Mathieu, Roland; He, Jinping; Kaneko, Yoshio; Tokura, Yoshinori; Asamitsu, Atsushi; Kumai, Reiji; Tomioka, Yasuhide; Matsui, Yoshio

    2006-01-01

    Structural and magnetic properties have been investigated for half-doped single-layer manganites RE 0.5 Sr 1.5 MnO 4 [RE=La, (La, Pr), Pr, Nd, Sm, and Eu]. Analyses of electron diffraction and ac susceptibility measurements have revealed that the long-range charge-orbital ordering (CO-OO) state as observed in La 0.5 Sr 1.5 MnO 4 is suppressed for the other materials: the CO-OO transition temperature, as well as the correlation length decreases with a decrease in the cation size of RE. Such a short-range CO-OO state shows a spin-glass behavior at low temperatures. A new electronic phase diagram is established with quenched disorder as the control parameter. (author)

  18. Biomimetic plasmonic color generated by the single-layer coaxial honeycomb nanostructure arrays

    Science.gov (United States)

    Zhao, Jiancun; Gao, Bo; Li, Haoyong; Yu, Xiaochang; Yang, Xiaoming; Yu, Yiting

    2017-07-01

    We proposed a periodic coaxial honeycomb nanostructure array patterned in a silver film to realize the plasmonic structural color, which was inspired from natural honeybee hives. The spectral characteristics of the structure with variant geometrical parameters are investigated by employing a finite-difference time-domain method, and the corresponding colors are thus derived by calculating XYZ tristimulus values corresponding with the transmission spectra. The study demonstrates that the suggested structure with only a single layer has high transmission, narrow full-width at half-maximum, and wide color tunability by changing geometrical parameters. Therefore, the plasmonic colors realized possess a high color brightness, saturation, as well as a wide color gamut. In addition, the strong polarization independence makes it more attractive for practical applications. These results indicate that the recommended color-generating plasmonic structure has various potential applications in highly integrated optoelectronic devices, such as color filters and high-definition displays.

  19. Thermal vibration of rectangular single-layered black phosphorus predicted by orthotropic plate model

    Science.gov (United States)

    Zhang, Yiqing; Wang, Lifeng; Jiang, Jingnong

    2018-03-01

    Vibrational behavior is very important for nanostructure-based resonators. In this work, an orthotropic plate model together with a molecular dynamics (MD) simulation is used to investigate the thermal vibration of rectangular single-layered black phosphorus (SLBP). Two bending stiffness, two Poisson's ratios, and one shear modulus of SLBP are calculated using the MD simulation. The natural frequency of the SLBP predicted by the orthotropic plate model agrees with the one obtained from the MD simulation very well. The root of mean squared (RMS) amplitude of the SLBP is obtained by MD simulation and the orthotropic plate model considering the law of energy equipartition. The RMS amplitude of the thermal vibration of the SLBP is predicted well by the orthotropic plate model compared to the MD results. Furthermore, the thermal vibration of the SLBP with an initial stress is also well-described by the orthotropic plate model.

  20. Water desalination with a single-layer MoS2 nanopore

    Science.gov (United States)

    Heiranian, Mohammad; Farimani, Amir Barati; Aluru, Narayana R.

    2015-01-01

    Efficient desalination of water continues to be a problem facing the society. Advances in nanotechnology have led to the development of a variety of nanoporous membranes for water purification. Here we show, by performing molecular dynamics simulations, that a nanopore in a single-layer molybdenum disulfide can effectively reject ions and allow transport of water at a high rate. More than 88% of ions are rejected by membranes having pore areas ranging from 20 to 60 Å2. Water flux is found to be two to five orders of magnitude greater than that of other known nanoporous membranes. Pore chemistry is shown to play a significant role in modulating the water flux. Pores with only molybdenum atoms on their edges lead to higher fluxes, which are ∼70% greater than that of graphene nanopores. These observations are explained by permeation coefficients, energy barriers, water density and velocity distributions in the pores. PMID:26465062

  1. Large theoretical thermoelectric power factor of suspended single-layer MoS2

    International Nuclear Information System (INIS)

    Babaei, Hasan; Khodadadi, J. M.; Sinha, Sanjiv

    2014-01-01

    We have calculated the semi-classical thermoelectric power factor of suspended single-layer (SL)- MoS 2 utilizing electron relaxation times derived from ab initio calculations. Measurements of the thermoelectric power factor of SL-MoS 2 on substrates reveal poor power factors. In contrast, we find the thermoelectric power factor of suspended SL-MoS 2 to peak at ∼2.8 × 10 4 μW/m K 2 at 300 K, at an electron concentration of 10 12 cm −2 . This figure is higher than that in bulk Bi 2 Te 3 , for example. Given its relatively high thermal conductivity, suspended SL-MoS 2 may hold promise for in-plane thin-film Peltier coolers, provided reasonable mobilities can be realized

  2. The strain rate effect on the buckling of single-layer MoS2.

    Science.gov (United States)

    Jiang, Jin-Wu

    2015-01-15

    The Euler buckling theory states that the buckling critical strain is an inverse quadratic function of the length for a thin plate in the static compression process. However, the suitability of this theory in the dynamical process is unclear, so we perform molecular dynamics simulations to examine the applicability of the Euler buckling theory for the fast compression of the single-layer MoS2. We find that the Euler buckling theory is not applicable in such dynamical process, as the buckling critical strain becomes a length-independent constant in the buckled system with many ripples. However, the Euler buckling theory can be resumed in the dynamical process after restricting the theory to an individual ripple in the buckled structure.

  3. Method for fabrication of crack-free ceramic dielectric films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan

    2017-12-05

    The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

  4. Field electron emission characteristics and physical mechanism of individual single-layer graphene.

    Science.gov (United States)

    Xiao, Zhiming; She, Juncong; Deng, Shaozhi; Tang, Zikang; Li, Zhibing; Lu, Jianming; Xu, Ningsheng

    2010-11-23

    Due to its difficulty, experimental measurement of field emission from a single-layer graphene has not been reported, although field emission from a two-dimensional (2D) regime has been an attractive topic. The open surface and sharp edge of graphene are beneficial for field electron emission. A 2D geometrical effect, such as massless Dirac fermion, can lead to new mechanisms in field emission. Here, we report our findings from in situ field electron emission characterization on an individual singe-layer graphene and the understanding of the related mechanism. The measurement of field emission from the edges was done using a microanode probe equipped in a scanning electron microscope. We show that repeatable stable field emission current can be obtained after a careful conditioning process. This enables us to examine experimentally the typical features of the field emission from a 2D regime. We plot current versus applied field data, respectively, in ln(I/E(3/2)) ∼ 1/E and ln(I/E(3)) ∼ 1/E(2) coordinates, which have recently been proposed for field emission from graphene in high- and low-field regimes. It is observed that the plots all exhibit an upward bending feature, revealing that the field emission processes undergo from a low- to high-field transition. We discuss with theoretical analysis the physical mechanism responsible for the new phenomena.

  5. Single Layer Bismuth Iodide: Computational Exploration of Structural, Electrical, Mechanical and Optical Properties

    Science.gov (United States)

    Ma, Fengxian; Zhou, Mei; Jiao, Yalong; Gao, Guoping; Gu, Yuantong; Bilic, Ante; Chen, Zhongfang; Du, Aijun

    2015-12-01

    Layered graphitic materials exhibit new intriguing electronic structure and the search for new types of two-dimensional (2D) monolayer is of importance for the fabrication of next generation miniature electronic and optoelectronic devices. By means of density functional theory (DFT) computations, we investigated in detail the structural, electronic, mechanical and optical properties of the single-layer bismuth iodide (BiI3) nanosheet. Monolayer BiI3 is dynamically stable as confirmed by the computed phonon spectrum. The cleavage energy (Ecl) and interlayer coupling strength of bulk BiI3 are comparable to the experimental values of graphite, which indicates that the exfoliation of BiI3 is highly feasible. The obtained stress-strain curve shows that the BiI3 nanosheet is a brittle material with a breaking strain of 13%. The BiI3 monolayer has an indirect band gap of 1.57 eV with spin orbit coupling (SOC), indicating its potential application for solar cells. Furthermore, the band gap of BiI3 monolayer can be modulated by biaxial strain. Most interestingly, interfacing electrically active graphene with monolayer BiI3 nanosheet leads to enhanced light absorption compared to that in pure monolayer BiI3 nanosheet, highlighting its great potential applications in photonics and photovoltaic solar cells.

  6. Band Alignment at GaN/Single-Layer WSe2 Interface

    KAUST Repository

    Tangi, Malleswararao

    2017-02-21

    We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.

  7. Unexpected strong magnetism of Cu doped single-layer MoS₂ and its origin.

    Science.gov (United States)

    Yun, Won Seok; Lee, J D

    2014-05-21

    The magnetism of the 3d transition-metal (TM) doped single-layer (1L) MoS2, where the Mo atom is partially replaced by the 3d TM atom, is investigated using the first-principles density functional calculations. In a series of 3d TM doped 1L-MoS2's, the induced spin polarizations are negligible for Sc, Ti, and Cr dopings, while the induced spin polarizations are confirmed for V, Mn, Fe, Co, Ni, Cu, and Zn dopings and the systems become magnetic. Especially, the Cu doped system shows unexpectedly strong magnetism although Cu is nonmagnetic in its bulk state. The driving force is found to be a strong hybridization between Cu 3d states and 3p states of neighboring S, which results in an extreme unbalanced spin-population in the spin-split impurity bands near the Fermi level. Finally, we also discuss further issues of the Cu induced magnetism of 1L-MoS2 such as investigation of additional charge states, the Cu doping at the S site instead of the Mo site, and the Cu adatom on the layer (i.e., 1L-MoS2).

  8. Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

    Science.gov (United States)

    Kumar, Sunil; Kumar, Ashish; Tripathi, Ambuj; Tyagi, Chetna; Avasthi, D. K.

    2018-04-01

    In this work, swift heavy ion irradiation induced effects on the electrical properties of single layer graphene are reported. The modulation in minimum conductivity point in graphene with in-situ electrical measurement during ion irradiation was studied. It is found that the resistance of graphene layer decreases at lower fluences up to 3 × 1011 ions/cm2, which is accompanied by the five-fold increase in electron and hole mobilities. The ion irradiation induced increase in electron and hole mobilities at lower fluence up to 1 × 1011 ions/cm2 is verified by separate Hall measurements on another irradiated graphene sample at the selected fluence. In contrast to the adverse effects of irradiation on the electrical properties of materials, we have found improvement in electrical mobility after irradiation. The increment in mobility is explained by considering the defect annealing in graphene after irradiation at a lower fluence regime. The modification in carrier density after irradiation is also observed. Based on findings of the present work, we suggest ion beam irradiation as a useful tool for tuning of the electrical properties of graphene.

  9. Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

    Energy Technology Data Exchange (ETDEWEB)

    Colon, Albert; Stan, Liliana; Divan, Ralu; Shi, Junxia

    2016-11-01

    Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction field-effect transistors is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets, or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approach this problem, the authors fabricated metal-insulator-semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO2 and Al2O3 using different ratios of ALD cycles. TiO2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO2. The gate leakage current density decreases with increasing Al content, being similar to 2-3 orders of magnitude lower for a TiO2:Al2O3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO2 and decreases with increasing the number of Al2O3 cycles, it is maintaining a relatively high value compared to an Al2O3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-kappa properties of TiO2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material for both

  10. Growth, spectral, thermal, laser damage threshold, microhardness, dielectric, linear and nonlinear optical properties of an organic single crystal: L-phenylalanine DL-mandelic acid

    Energy Technology Data Exchange (ETDEWEB)

    Jayaprakash, P. [PG & Research Department of Physics, Arignar Anna Govt. Arts College, Cheyyar 604 407, Tamil Nadu (India); Peer Mohamed, M. [PG & Research Department of Physics, Arignar Anna Govt. Arts College, Cheyyar 604 407, Tamil Nadu (India); Department of Physics, C. Abdul Hakeem College, Melvisharam 632 509, Tamil Nadu (India); Krishnan, P. [Department of Physics, St. Joseph’s College of Engineering, Chennai 600 119, Tamil Nadu (India); Nageshwari, M.; Mani, G. [PG & Research Department of Physics, Arignar Anna Govt. Arts College, Cheyyar 604 407, Tamil Nadu (India); Lydia Caroline, M., E-mail: lydiacaroline2006@yahoo.co.in [PG & Research Department of Physics, Arignar Anna Govt. Arts College, Cheyyar 604 407, Tamil Nadu (India)

    2016-12-15

    Single crystals of L-phenylalanine dl-mandelic acid [C{sub 9}H{sub 11}NO{sub 2}. C{sub 8}H{sub 8}O{sub 3}], have been grown by the slow evaporation technique at room temperature using aqueous solution. The single crystal XRD study confirms monoclinic system for the grown crystal. The functional groups present in the grown crystal have been identified by FTIR and FT-Raman analyses. The optical absorption studies show that the crystal is transparent in the visible region with a lower cut-off wavelength of 257 nm and the optical band gap energy E{sub g} is determined to be 4.62 eV. The Kurtz powder second harmonic generation was confirmed using Nd:YAG laser with fundamental wavelength of 1064 nm. Further, the thermal studies confirmed no weight loss up to 150°C for the as-grown crystal. The photoluminescence spectrum exhibited three peaks (414 nm, 519 nm, 568 nm) due to the donation of protons from carboxylic acid to amino group. Laser damage threshold value was found to be 4.98 GW/cm{sup 2}. The Vickers microhardness test was carried out on the grown crystals and there by Vickers hardness number (H{sub v}), work hardening coefficient (n), yield strength (σ{sub y}), stiffness constant C{sub 11} were evaluated. The dielectric behavior of the crystal has been determined in the frequency range 50 Hz–5 MHz at various temperatures.

  11. Cold cathode emission studies on topographically modified few layer and single layer MoS2 films

    Science.gov (United States)

    Gaur, Anand P. S.; Sahoo, Satyaprakash; Mendoza, Frank; Rivera, Adriana M.; Kumar, Mohit; Dash, Saroj P.; Morell, Gerardo; Katiyar, Ram S.

    2016-01-01

    Nanostructured materials, such as carbon nanotubes, are excellent cold cathode emitters. Here, we report comparative field emission (FE) studies on topographically tailored few layer MoS2 films consisting of ⟨0001⟩ plane perpendicular (⊥) to c-axis (i.e., edge terminated vertically aligned) along with planar few layer and monolayer (1L) MoS2 films. FE measurements exhibited lower turn-on field Eto (defined as required applied electric field to emit current density of 10 μA/cm2) ˜4.5 V/μm and higher current density ˜1 mA/cm2, for edge terminated vertically aligned (ETVA) MoS2 films. However, Eto magnitude for planar few layer and 1L MoS2 films increased further to 5.7 and 11 V/μm, respectively, with one order decrease in emission current density. The observed differences in emission behavior, particularly for ETVA MoS2 is attributed to the high value of geometrical field enhancement factor (β), found to be ˜1064, resulting from the large confinement of localized electric field at edge exposed nanograins. Emission behavior of planar few layers and 1L MoS2 films are explained under a two step emission mechanism. Our studies suggest that with further tailoring the microstructure of ultra thin ETVA MoS2 films would result in elegant FE properties.

  12. Influence of sodium dodecyl sulfate concentration on the photocatalytic activity and dielectric properties of intercalated sodium dodecyl sulfate into Zn–Cd–Al layered double hydroxide

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Abdullah Ahmed Ali, E-mail: abdullah2803@gmail.com [Department of Physics, Faculty of Applied Science, Thamar University, Dhamar 87246 (Yemen); Talib, Zainal Abidin [Department of Physics, Faculty of Science, Universiti Putra Malaysia, UPM, Serdang, Selangor 43400 (Malaysia); Hussein, Mohd Zobir [Advanced Materials and Nanotechnology Laboratory, Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, UPM, Serdang, Selangor 43400 (Malaysia)

    2015-02-15

    Highlights: • Zn–Cd–Al–LDH–DS were synthesized with different SDS concentrations. • Photocatalytic activity of samples was improved by increasing SDS concentration. • Dielectric response of LDH can be described by anomalous low frequency dispersion. • The dc conductivity values were calculated for Zn–Cd–Al–LDH–DS samples. • ESR spectra exhibited the successful intercalation of DS molecule into LDH gallery. - Abstract: Sodium dodecyl sulfate (SDS) has been successfully intercalated into Zn–Cd–Al–LDH precursor with different SDS concentrations (0.2, 0.3, 0.4, 0.5 and 1 mol L{sup −1}) using the coprecipitation method at (Zn{sup 2+} + Cd{sup 2+})/Al{sup 3+} molar ratio of 13 and pH 8. The structural, morphological, texture and composition properties of the synthesized (Zn–Cd–Al–LDH–DS) nanostructure were investigated using powder X-ray diffraction (PXRD), scanning electron microscope (SEM), thermogravimetric analysis (TGA) and Fourier transform infrared (FT-IR), respectively. The photocatalytic activity of these materials was developed by increasing the concentration of intercalated SDS. The absorbance spectra have been used to detect an anion in the LDH interlayer before and after the intercalation process, which confirmed the presence of the dodecyl sulfate (DS{sup −}) anion into LDH gallery after intercalation. The anomalous low frequency dispersion (ALFD) has been used to describe the dielectric response of Zn–Cd–Al–LDH–DS nanostructure using the second type of universal power law. At low frequency, the polarization effect of electrodes caused the rising in dielectric constant and loss values. An important result of the dielectric measurements is the calculated dc conductivity values, which are new in dielectric spectroscopy of LDH materials. An important result of the electron spin resonance (ESR) spectra exhibited the successful intercalation of DS molecule into LDH gallery. The g-factor value was affected by

  13. Alveolar ridge preservation with an open-healing approach using single-layer or double-layer coverage with collagen membranes.

    Science.gov (United States)

    Choi, Ho-Keun; Cho, Hag-Yeon; Lee, Sung-Jo; Cho, In-Woo; Shin, Hyun-Seung; Koo, Ki-Tae; Lim, Hyun-Chang; Park, Jung-Chul

    2017-12-01

    The aim of this prospective pilot study was to compare alveolar ridge preservation (ARP) procedures with open-healing approach using a single-layer and a double-layer coverage with collagen membranes using radiographic and clinical analyses. Eleven molars from 9 healthy patients requiring extraction of the maxillary or mandibular posterior teeth were included and allocated into 2 groups. After tooth extraction, deproteinized bovine bone mineral mixed with 10% collagen was grafted into the socket and covered either with a double-layer of resorbable non-cross-linked collagen membranes (DL group, n=6) or with a single-layer (SL group, n=5). Primary closure was not obtained. Cone-beam computed tomography images were taken immediately after the ARP procedure and after a healing period of 4 months before implant placement. Radiographic measurements were made of the width and height changes of the alveolar ridge. All sites healed without any complications, and dental implants were placed at all operated sites with acceptable initial stability. The measurements showed that the reductions in width at the level 1 mm apical from the alveolar crest (including the bone graft) were -1.7±0.5 mm in the SL group and -1.8±0.4 mm in the DL group, and the horizontal changes in the other areas were also similar in the DL and SL groups. The reductions in height were also comparable between groups. Within the limitations of this study, single-layer and double-layer coverage with collagen membranes after ARP failed to show substantial differences in the preservation of horizontal or vertical dimensions or in clinical healing. Thus, both approaches seem to be suitable for open-healing ridge preservation procedures.

  14. Comparative study of hand sewn single layer anastomosis of dog's bowel Estudo comparativo das anastomoses manuais em plano único do intestino delgado de cães

    OpenAIRE

    João Luiz Moreira Coutinho Azevedo; Octávio Hypólito; Otávio Cansanção Azevedo; Otávio Monteiro Becker Jr.; Dalmer Faria Freire

    2008-01-01

    BACKGROUND: Two-layer intestinal anastomosis increases the inflammatory response while single-layer anastomosis results in a better wound healing. However the four main kinds of stitches which may be chosen in performing single layer intestinal sutures never before had been comparatively studied. AIM: To compare the four more commonly used types of single layer surgical anastomosis sutures of the digestive tract. METHODS: Six mongrel dogs were operated, each one receiving two anastomosis: one...

  15. A single-layer, planar, optofluidic Mach–Zehnder interferometer for label-free detection†

    Science.gov (United States)

    Lapsley, Michael Ian; Chiang, I.-Kao; Zheng, Yue Bing; Ding, Xiaoyun; Mao, Xiaole

    2014-01-01

    We have developed a planar, optofluidic Mach–Zehnder interferometer for the label-free detection of liquid samples. In contrast to most on-chip interferometers which require complex fabrication, our design was realized via a simple, single-layer soft lithography fabrication process. In addition, a single-wavelength laser source and a silicon photodetector were the only optical equipment used for data collection. The device was calibrated using published data for the refractive index of calcium chloride (CaCl2) in solution, and the biosensing capabilities of the device were tested by detecting bovine serum albumin (BSA). Our design enables a refractometer with a low limit of detection (1.24 × 10−4 refractive index units (RIU)), low variability (1 × 10−4 RIU), and high sensitivity (927.88 oscillations per RIU). This performance is comparable to state-of-the-art optofluidic refractometers that involve complex fabrication processes and/or expensive, bulky optics. The advantages of our device (i.e. simple fabrication process, straightforward optical equipment, low cost, and high detection sensitivity) make it a promising candidate for future mass-producible, inexpensive, highly sensitive, label-free optical detection systems. PMID:21479332

  16. A single-layer, planar, optofluidic Mach-Zehnder interferometer for label-free detection.

    Science.gov (United States)

    Lapsley, Michael Ian; Chiang, I-Kao; Zheng, Yue Bing; Ding, Xiaoyun; Mao, Xiaole; Huang, Tony Jun

    2011-05-21

    We have developed a planar, optofluidic Mach-Zehnder interferometer for the label-free detection of liquid samples. In contrast to most on-chip interferometers which require complex fabrication, our design was realized via a simple, single-layer soft lithography fabrication process. In addition, a single-wavelength laser source and a silicon photodetector were the only optical equipment used for data collection. The device was calibrated using published data for the refractive index of calcium chloride (CaCl(2)) in solution, and the biosensing capabilities of the device were tested by detecting bovine serum albumin (BSA). Our design enables a refractometer with a low limit of detection (1.24 × 10(-4) refractive index units (RIU)), low variability (1 × 10(-4) RIU), and high sensitivity (927.88 oscillations per RIU). This performance is comparable to state-of-the-art optofluidic refractometers that involve complex fabrication processes and/or expensive, bulky optics. The advantages of our device (i.e. simple fabrication process, straightforward optical equipment, low cost, and high detection sensitivity) make it a promising candidate for future mass-producible, inexpensive, highly sensitive, label-free optical detection systems. © The Royal Society of Chemistry 2011

  17. Adhesion and migration of CHO cells on micropatterned single layer graphene

    Science.gov (United States)

    Keshavan, S.; Oropesa-Nuñez, R.; Diaspro, A.; Canale, C.; Dante, S.

    2017-06-01

    Cell patterning technology on single layer graphene (SLG) is a fairly new field that can find applications in tissue engineering and biomaterial/biosensors development. Recently, we have developed a simple and effective approach for the fabrication of patterned SLG substrates by laser micromachining, and we have successfully applied it for the obtainment of geometrically ordered neural networks. Here, we exploit the same approach to investigate the generalization of the cell response to the surface cues of the fabricated substrates and, contextually, to quantify cell adhesion on the different areas of the patterns. To attain this goal, we tested Chinese hamster ovary (CHO) cells on PDL-coated micropatterned SLG substrates and quantified the adhesion by using single cell force spectroscopy (SCFS). Our results indicate higher cell adhesion on PDL-SLG, and, consequently, an initial CHO cell accumulation on the graphene areas, confirming the neuronal behaviour observed previously; interestingly, at later time point in culture, cell migration was observed towards the adjacent SLG ablated regions, which resulted more favourable for cell proliferation. Therefore, our findings indicate that the mechanism of interaction with the surface cues offered by the micropatterned substrates is strictly cell-type dependent.

  18. Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Yu-Kuang Liao

    2017-04-01

    Full Text Available Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD and chemical bath deposition (CBD as used by the Cu(In,GaSe2 (CIGS thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.

  19. Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition.

    Science.gov (United States)

    Liao, Yu-Kuang; Liu, Yung-Tsung; Hsieh, Dan-Hua; Shen, Tien-Lin; Hsieh, Ming-Yang; Tzou, An-Jye; Chen, Shih-Chen; Tsai, Yu-Lin; Lin, Wei-Sheng; Chan, Sheng-Wen; Shen, Yen-Ping; Cheng, Shun-Jen; Chen, Chyong-Hua; Wu, Kaung-Hsiung; Chen, Hao-Ming; Kuo, Shou-Yi; Charlton, Martin D B; Hsieh, Tung-Po; Kuo, Hao-Chung

    2017-04-06

    Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new "paradigm shift" non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se₂ (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.

  20. PropBase Query Layer: a single portal to UK subsurface physical property databases

    Science.gov (United States)

    Kingdon, Andrew; Nayembil, Martin L.; Richardson, Anne E.; Smith, A. Graham

    2013-04-01

    Until recently, the delivery of geological information for industry and public was achieved by geological mapping. Now pervasively available computers mean that 3D geological models can deliver realistic representations of the geometric location of geological units, represented as shells or volumes. The next phase of this process is to populate these with physical properties data that describe subsurface heterogeneity and its associated uncertainty. Achieving this requires capture and serving of physical, hydrological and other property information from diverse sources to populate these models. The British Geological Survey (BGS) holds large volumes of subsurface property data, derived both from their own research data collection and also other, often commercially derived data sources. This can be voxelated to incorporate this data into the models to demonstrate property variation within the subsurface geometry. All property data held by BGS has for many years been stored in relational databases to ensure their long-term continuity. However these have, by necessity, complex structures; each database contains positional reference data and model information, and also metadata such as sample identification information and attributes that define the source and processing. Whilst this is critical to assessing these analyses, it also hugely complicates the understanding of variability of the property under assessment and requires multiple queries to study related datasets making extracting physical properties from these databases difficult. Therefore the PropBase Query Layer has been created to allow simplified aggregation and extraction of all related data and its presentation of complex data in simple, mostly denormalized, tables which combine information from multiple databases into a single system. The structure from each relational database is denormalized in a generalised structure, so that each dataset can be viewed together in a common format using a simple

  1. Dependence of the structure of ion-modified NiTi single crystal layers on the orientation of irradiated surface

    Science.gov (United States)

    Poletika, T. M.; Meisner, L. L.; Girsova, S. L.; Tverdokhlebova, A. V.; Meisner, S. N.

    2017-07-01

    The composition and structure of Si layers implanted into titanium nickelide single crystals with different orientations relative to the ion beam propagation direction have been studied using Auger electron spectroscopy and transmission electron microscopy. The role of the "soft" [111]B2 and "hard" [001]B2 NiTi orientations in the formation of the structure of ion-modified surface layer, as well as the defect structure of the surface layers of the single crystals, has been revealed. Orientation effects of selective sputtering and channeling of ions, which control the composition and thickness of the oxide and amorphous layers being formed, ion and impurity penetration depth, as well as the concentration profile of the Ni distribution over the surface, have been detected.

  2. Fresnel analysis of Kretschmann geometry with a uniaxial crystal layer on a three-layered film

    Directory of Open Access Journals (Sweden)

    Yu-Ju Hung

    2016-04-01

    Full Text Available The use of total internal reflection within the prism coupling scheme is a simple approach to the generation of surface plasmon polariton waves on a metal/dielectric interface. Unfortunately, an anisotropic layer on a metallic film complicates the derivation of resonance angle. In this study, we present clear Fresnel analysis of a liquid crystal film on a metal surface. Few current simulation packages enable the analysis of multiple layers with a single anisotropic layer. The proposed formulation process is applicable to multi-layered structures.

  3. Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

    International Nuclear Information System (INIS)

    Papon, Remi; Sharma, Subash; Shinde, Sachin M.; Vishwakarma, Riteshkumar; Tanemura, Masaki; Kalita, Golap

    2014-01-01

    Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.

  4. Single layer and multilayer wear resistant coatings of (Ti,Al)N: a review

    International Nuclear Information System (INIS)

    PalDey, S.; Deevi, S.C.

    2003-01-01

    periodicity of 5-10 nm allow creation of coatings with different properties than PVD deposited single layered thick coatings with columnar grain structure. A range of (Ti,Al)N based multilayers containing layers of (Ti,Al)CN, (Ti,Nb)N, TiN, AlN/TiN, CrN, Mo and WC are also reviewed. It is now possible to design new wear resistant or functional coatings based on a multilayer or a multicomponent system to meet the demanding applications of advanced materials

  5. Tuning Electronic Structure of Single Layer MoS2through Defect and Interface Engineering.

    Science.gov (United States)

    Chen, Yan; Huang, Shengxi; Ji, Xiang; Adepalli, Kiran; Yin, Kedi; Ling, Xi; Wang, Xinwei; Xue, Jianmin; Dresselhaus, Mildred; Kong, Jing; Yildiz, Bilge

    2018-03-27

    Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS 2 ) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS 2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS 2 , presenting a useful way to engineer the performance of MoS 2 . The mechanisms by which lattice defects affect the MoS 2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS 2 electronic structure. We fabricated single-layer MoS 2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO 2 as substrates and created defects in MoS 2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS 2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS 2 due to charge transfer at the interface. Furthermore, the reduction state of CeO 2 as an oxide substrate affects the interface charge transfer with MoS 2 . The irradiated MoS 2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS 2 , demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS 2 and show the importance of defect engineering in tuning the functionalities of MoS 2 and other TMDs in electronics, optoelectronics, and

  6. Design and Development of an Array of Dielectric Suspended Membranes for Microhotplate Applications

    Directory of Open Access Journals (Sweden)

    Mahanth Prasad

    2014-05-01

    Full Text Available The paper presents the design, fabrication and characterization of an array of suspended dielectric suspended membranes for microhotplate applications. A single cell membrane (100 µm ´ 100 µm made of two different dielectric layers: SiO2 and Si3N4 separately, was designed and simulated using ANSYS 10.0. The simulation of stress generated in different dielectric membranes as a function of temperature is reported. The thickness of both layers was taken as 0.3 µm. The membranes of both SiO2 and Si3N4 dielectrics were fabricated on silicon substrate by bulk micromachining technique using TMAH solution. The buckling of the beam and breakage of membranes made of high-stress Si3N4 film are reported. The simulated results were verified by experiments. The membrane made of SiO2 layer was found to be more suitable in comparison to high-stress Si3N4 layer for microhotplate applications. The present approach provides high yield at low cost for fabrication of microhotplates for gas sensing applications.

  7. A Split Ring Resonator Dielectric Probe for Near-Field Dielectric Imaging.

    Science.gov (United States)

    Isakov, Dmitry; Stevens, Chris J; Castles, Flynn; Grant, Patrick S

    2017-05-17

    A single split-ring resonator (SRR) probe for 2D surface mapping and imaging of relative dielectric permittivity for the characterisation of composite materials has been developed. The imaging principle, the analysis and the sensitivity of the SRR surface dielectric probe data is described. The surface dielectric properties of composite materials in the frequency range 1-3 GHz have been measured based on the magnetic resonance frequency of the transmission loss of the SRR dielectric probe when in contact with the surface. The SRR probe performance was analysed analytically and using full-wave simulation, and predictions showed close agreement with experiment for composite materials with spatially varying dielectric permittivity manufactured by 3D printing. The spatial and permittivity resolution of the SRR dielectric probe were controlled by the geometrical parameters of the SRR which provided flexibility to tune the SRR probe. The best accuracy of the dielectric permittivity measurements was within 5%.

  8. Monolithic-Structured Single-Layered Textile-Based Dye-Sensitized Solar Cells

    Science.gov (United States)

    Yun, Min Ju; Cha, Seung I.; Kim, Han Seong; Seo, Seon Hee; Lee, Dong Y.

    2016-10-01

    Textile-structured solar cells are frequently discussed in the literature due to their prospective applications in wearable devices and in building integrated solar cells that utilize their flexibility, mechanical robustness, and aesthetic appearance, but the current approaches for textile-based solar cells—including the preparation of fibre-type solar cells woven into textiles—face several difficulties from high friction and tension during the weaving process. This study proposes a new structural concept and fabrication process for monolithic-structured textile-based dye-sensitized solar cells that are fabricated by a process similar to the cloth-making process, including the preparation of wires and yarns that are woven for use in textiles, printed, dyed, and packaged. The fabricated single-layered textile-based dye-sensitized solar cells successfully act as solar cells in our study, even under bending conditions. By controlling the inter-weft spacing and the number of Ti wires for the photoelectrode conductor, we have found that the performance of this type of dye-sensitized solar cell was notably affected by the spacing between photoelectrodes and counter-electrodes, the exposed areas of Ti wires to photoelectrodes, and photoelectrodes’ surface morphology. We believe that this study provides a process and concept for improved textile-based solar cells that can form the basis for further research.

  9. Pregnancy rates after artificial insemination with cooled stallion spermatozoa either with or without single layer centrifugation.

    Science.gov (United States)

    Morrell, J M; Richter, J; Martinsson, G; Stuhtmann, G; Hoogewijs, M; Roels, K; Dalin, A-M

    2014-11-01

    A successful outcome after artificial insemination with cooled semen is dependent on many factors, the sperm quality of the ejaculate being one. Previous studies have shown that spermatozoa with good motility, normal morphology, and good chromatin integrity can be selected by means of colloid centrifugation, particularly single layer centrifugation (SLC) using species-specific colloids. The purpose of the present study was to conduct an insemination trial with spermatozoa from "normal" ejaculates, i.e., from stallions with no known fertility problem, to determine whether the improvements in sperm quality seen in SLC-selected sperm samples compared with uncentrifuged controls in laboratory tests are reflected in an increased pregnancy rate after artificial insemination. In a multicentre study, SLC-selected sperm samples and uncentrifuged controls from eight stallions were inseminated into approximately 10 mares per treatment per stallion. Ultrasound examination was carried out approximately 16 days after insemination to detect an embryonic vesicle. The pregnancy rates per cycle were 45% for controls and 69% for SLC-selected sperm samples, which is statistically significant (P < 0.0018). Thus, the improvement in sperm quality reported previously for SLC-selected sperm samples is associated with an increase in pregnancy rate, even for ejaculates from stallions with no known fertility problem. Copyright © 2014 Elsevier Inc. All rights reserved.

  10. Monolithic-Structured Single-Layered Textile-Based Dye-Sensitized Solar Cells

    Science.gov (United States)

    Yun, Min Ju; Cha, Seung I.; Kim, Han Seong; Seo, Seon Hee; Lee, Dong Y.

    2016-01-01

    Textile-structured solar cells are frequently discussed in the literature due to their prospective applications in wearable devices and in building integrated solar cells that utilize their flexibility, mechanical robustness, and aesthetic appearance, but the current approaches for textile-based solar cells—including the preparation of fibre-type solar cells woven into textiles—face several difficulties from high friction and tension during the weaving process. This study proposes a new structural concept and fabrication process for monolithic-structured textile-based dye-sensitized solar cells that are fabricated by a process similar to the cloth-making process, including the preparation of wires and yarns that are woven for use in textiles, printed, dyed, and packaged. The fabricated single-layered textile-based dye-sensitized solar cells successfully act as solar cells in our study, even under bending conditions. By controlling the inter-weft spacing and the number of Ti wires for the photoelectrode conductor, we have found that the performance of this type of dye-sensitized solar cell was notably affected by the spacing between photoelectrodes and counter-electrodes, the exposed areas of Ti wires to photoelectrodes, and photoelectrodes’ surface morphology. We believe that this study provides a process and concept for improved textile-based solar cells that can form the basis for further research. PMID:27708359

  11. Investigating change of properties in gallium ion irradiation patterned single-layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China); Dong, Jinyao; Bai, Bing [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Xie, Guoxin [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2016-10-14

    Besides its excellent physical properties, graphene promises to play a significant role in electronics with superior properties, which requires patterning of graphene for device integration. Here, we presented the changes in properties of single-layer graphene before and after patterning using gallium ion beam. Combined with Raman spectra of graphene, the scanning capacitance microscopy (SCM) image confirmed that a metal–insulator transition occurred after large doses of gallium ion irradiation. The changes in work function and Raman spectra of graphene indicated that the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. The patterning width of graphene presented an increasing trend due to the scattering influence of the impurities and the substrate. - Highlights: • The scanning capacitance microscopy image confirmed a metal–insulator transition occurred after large doses of gallium ion irradiation. • The changes indicated the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. • The patterning width of graphene presented a increasing trend due to the scattering influence of the impurities and the substrate.

  12. First-principles study of single-layer C-terminated BN quantum dots

    Science.gov (United States)

    Qu, Li-Hua; Zhang, Jian-Min; Xu, Ke-Wei

    2013-09-01

    We present a first-principles study of the structural, electronic and magnetic properties of single-layer C-terminated BN quantum dots (QDs) under different hydrotreating conditions. The morphologies of QDs with fully hydrogenated edges change slightly. For the fully bared cases, the edged C-C bonds become short and protrudent edged C atoms relax inwards therefore edged zigzag C chain tends to a straight line. The cases of the partially passivated by hydrogen atom at apex, the apex C atom is not relaxed inwards and a new C-C bond is formed. The fully hydrogenated QDs especially N-rich cases are energetically more favorable than those with bared or partially hydrogenated ones. The C-terminated BN-QDs have no magnetic moment when their protrudent edged C atoms are fully passivated by hydrogen atoms, while those with bared or partially hydrogenated edges possess magnetic moments and especially for N-rich cases their magnetic moments increase with increasing QD size n for either bared or partially hydrogenated edges. The band gap of the fully hydrogenated QDs decreases oscillatorily with increasing QD size n. Moreover, for the same size n, the energy gap is wider under N-rich condition than under B-rich condition.

  13. Structure of a single whisker representation in layer 2 of mouse somatosensory cortex.

    Science.gov (United States)

    Clancy, Kelly B; Schnepel, Philipp; Rao, Antara T; Feldman, Daniel E

    2015-03-04

    Layer (L)2 is a major output of primary sensory cortex that exhibits very sparse spiking, but the structure of sensory representation in L2 is not well understood. We combined two-photon calcium imaging with deflection of many whiskers to map whisker receptive fields, characterize sparse coding, and quantitatively define the point representation in L2 of mouse somatosensory cortex. Neurons within a column-sized imaging field showed surprisingly heterogeneous, salt-and-pepper tuning to many different whiskers. Single whisker deflection elicited low-probability spikes in highly distributed, shifting neural ensembles spanning multiple cortical columns. Whisker-evoked response probability correlated strongly with spontaneous firing rate, but weakly with tuning properties, indicating a spectrum of inherent responsiveness across pyramidal cells. L2 neurons projecting to motor and secondary somatosensory cortex differed in whisker tuning and responsiveness, and carried different amounts of information about columnar whisker deflection. From these data, we derive a quantitative, fine-scale picture of the distributed point representation in L2. Copyright © 2015 the authors 0270-6474/15/353946-13$15.00/0.

  14. Broadband photodetector based on carbon nanotube thin film/single layer graphene Schottky junction

    Science.gov (United States)

    Zhang, Teng-Fei; Li, Zhi-Peng; Wang, Jiu-Zhen; Kong, Wei-Yu; Wu, Guo-An; Zheng, Yu-Zhen; Zhao, Yuan-Wei; Yao, En-Xu; Zhuang, Nai-Xi; Luo, Lin-Bao

    2016-12-01

    In this study, we present a broadband nano-photodetector based on single-layer graphene (SLG)-carbon nanotube thin film (CNTF) Schottky junction. It was found that the as-fabricated device exhibited obvious sensitivity to a wide range of illumination, with peak sensitivity at 600 and 920 nm. In addition, the SLG-CNTF device had a fast response speed (τr = 68 μs, τf = 78 μs) and good reproducibility in a wide range of switching frequencies (50-5400 Hz). The on-off ratio, responsivity, and detectivity of the device were estimated to be 1 × 102, 209 mAW-1 and 4.87 × 1010 cm Hz1/2 W-1, respectively. What is more, other device parameters including linear performance θ and linear dynamic range (LDR) were calculated to be 0.99 and 58.8 dB, respectively, which were relatively better than other carbon nanotube based devices. The totality of the above study signifies that the present SLG-CNTF Schottky junction broadband nano-photodetector may have promising application in future nano-optoelectronic devices and systems.

  15. Compact Single-Layer Traveling-Wave Antenna DesignUsing Metamaterial Transmission Lines

    Science.gov (United States)

    Alibakhshikenari, Mohammad; Virdee, Bal Singh; Limiti, Ernesto

    2017-12-01

    This paper presents a single-layer traveling-wave antenna (TWA) that is based on composite right/left-handed (CRLH)-metamaterial (MTM) transmission line (TL) structure, which is implemented by using a combination of interdigital capacitors and dual-spiral inductive slots. By embedding dual-spiral inductive slots inside the CRLH MTM-TL results in a compact TWA. Dimensions of the proposed CRLH MTM-TL TWA is 21.5 × 30.0 mm2 or 0.372λ0 × 0.520λ0 at 5.2 GHz (center frequency). The fabricated TWA operates over 1.8-8.6 GHz with a fractional bandwidth greater than 120%, and it exhibits a peak gain and radiation efficiency of 4.2 dBi and 81%, respectively, at 5 GHz. By avoiding the use of lumped components, via-holes or defected ground structures, the proposed TWA design is economic for mass production as well as easy to integrate with wireless communication systems.

  16. Substitutional impurity in single-layer graphene: The Koster–Slater and Anderson models

    Energy Technology Data Exchange (ETDEWEB)

    Davydov, S. Yu., E-mail: sergei-davydov@mail.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The Koster–Slater and Anderson models are used to consider substitutional impurities in free-standing single-layer graphene. The density of states of graphene is described using a model (the M model). For the nitrogen and boron impurities, the occupation numbers and the parameter η which defines the fraction of delocalized electrons of the impurity are determined. In this case, experimental data are used for both determination of the model parameters and comparison with the results of theoretical estimations. The general features of the Koster–Slater and Anderson models and the differences between the two models are discussed. Specifically, it is shown that the band contributions to the occupation numbers of a nitrogen atom in both models are comparable, whereas the local contributions are substantially different: the local contributions are decisive in the Koster–Slater model and negligible in the Anderson model. The asymptotic behavior of the wave functions of a defect is considered in the Koster–Slater model, and the electron states of impurity dimers are considered in the Anderson model.

  17. Investigating change of properties in gallium ion irradiation patterned single-layer graphene

    International Nuclear Information System (INIS)

    Wang, Quan; Dong, Jinyao; Bai, Bing; Xie, Guoxin

    2016-01-01

    Besides its excellent physical properties, graphene promises to play a significant role in electronics with superior properties, which requires patterning of graphene for device integration. Here, we presented the changes in properties of single-layer graphene before and after patterning using gallium ion beam. Combined with Raman spectra of graphene, the scanning capacitance microscopy (SCM) image confirmed that a metal–insulator transition occurred after large doses of gallium ion irradiation. The changes in work function and Raman spectra of graphene indicated that the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. The patterning width of graphene presented an increasing trend due to the scattering influence of the impurities and the substrate. - Highlights: • The scanning capacitance microscopy image confirmed a metal–insulator transition occurred after large doses of gallium ion irradiation. • The changes indicated the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. • The patterning width of graphene presented a increasing trend due to the scattering influence of the impurities and the substrate.

  18. A single-layer tilting actuator with multiple close-gap electrodes

    International Nuclear Information System (INIS)

    Shmilovich, T; Krylov, S

    2009-01-01

    We report on the design, fabrication and characterization of a novel tilting electrostatic actuator, fabricated by using a single layer of a silicon on insulator (SOI) wafer and investigate, both theoretically and experimentally, the electromechanical behavior of the device. The actuator incorporates high aspect ratio comb-like electrodes oriented in the direction parallel to the rotation axis of the tilting element. An increase in the tilting angle is accompanied by a decrease in the distance between the electrodes and by an increase of the actuating torque. Simultaneously, the overlap area between electrodes located farther apart the axis shrinks, resulting in a 'restoring' torque in the opposite direction. The electromechanical behavior and stability of the device were investigated using a simplified model of the actuator and verified by a coupled three-dimensional simulation. Model results suggest that by changing the design parameters, the actuator characteristic can be tailored in a large range. Devices of three different configurations incorporating elastic torsion axes or bending flexures were fabricated and characterized and both static and resonant responses, typical for parametrically excited nonlinear oscillators, were registered. Theoretical and experimental results indicate that the suggested architecture can be efficiently used for the static and dynamic operation of electrostatic tilting devices

  19. Single-layer tungsten oxide as intelligent photo-responsive nanoagents for permanent male sterilization.

    Science.gov (United States)

    Liu, Zhen; Liu, Xianjun; Ran, Xiang; Ju, Enguo; Ren, Jinsong; Qu, Xiaogang

    2015-11-01

    Permanent male sterilization has been recognized as useful tools for the development of neuter experimental animals and fattening livestock, as well as efficient control of pet overpopulation. Traditional routes such as surgical ways, chemical injections, and anti-fertility vaccines have addressed these crucial problems with idea outcomes. However, these routes usually bring out serious pain and infection towards animals, as well as induce long-term adverse reaction and immune suppression. Thus, a convenient, but non-surgical strategy for male sterilization under a mild manner is highly desirable. Here, for the first time, we demonstrate a novel platform for male sterilization by using single-layer WO2.72 nanosheets as smart photo-responsive sterilants. Upon a 980 nm irradiation, these nanoagents can possess intrinsic NIR-induced hyperthermia and sensitize the formation of singlet oxygen due to the cooperation of photothermal and photodynamic effects. Mechanism of cellular injury can be attributed to the denaturation of protein and apoptosis-related death. Moreover, long-term toxicity and possible metabolism route after testicular injection are discussed, indicating the neglectable systemic toxicity and high bio-compatibility of our nanoagents. Overall, our strategy can extremely overcome the shortcomings in various routine routes and suggest the new biological application of nanomaterials. Copyright © 2015 Elsevier Ltd. All rights reserved.

  20. Photocatalytic Stability of Single- and Few-Layer MoS₂.

    Science.gov (United States)

    Parzinger, Eric; Miller, Bastian; Blaschke, Benno; Garrido, Jose A; Ager, Joel W; Holleitner, Alexander; Wurstbauer, Ursula

    2015-11-24

    MoS2 crystals exhibit excellent catalytic properties and great potential for photocatalytic production of solar fuels such as hydrogen gas. In this regard, the photocatalytic stability of exfoliated single- and few-layer MoS2 immersed in water is investigated by μ-Raman spectroscopy. We find that while the basal plane of MoS2 can be treated as stable under photocatalytic conditions, the edge sites and presumably also defect sites are highly affected by a photoinduced corrosion process. The edge sites of MoS2 monolayers are significantly more resistant to photocatalytic degradation compared to MoS2 multilayer edge sites. The photostability of MoS2 edge sites depends on the photon energy with respect to the band gap in MoS2 and also on the presence of oxygen in the electrolyte. These findings are interpreted in the framework of an oxidation process converting MoS2 into MoOx in the presence of oxygen and photoinduced charge carriers. The high stability of the MoS2 basal plane under photocatalytic treatment under visible light irradiation of extreme light intensities on the order of P ≈ 10 mW/μm(2) substantiates MoS2's potential as photocatalyst for solar hydrogen production.

  1. Abrupt change of luminescence spectrum in single-layer phosphorescent polymer light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, X.; Lee, D.-H.; Chae, H. [School of Chemical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Cho, S.M., E-mail: sungmcho@skku.edu [School of Chemical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Advanced Materials and Process Research Center for IT, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2012-01-15

    PVK-based single-layer phosphorescent polymer OLEDs (organic light emitting diodes) with different rubrene concentrations were fabricated and examined for the Foerster energy transfer from phosphorescent FIrpic dye to rubrene. We found out that at a certain rubrene concentration the energy transfer occurs abruptly and the transfer shows an abnormal evolution of electroluminescence (EL) spectrum due to the coincidence of peak wavelengths of bis[(4,6-difluorophenyl)-pyridinato-N,C{sup 2'}](picolinate) iridium(III) (FIrpic) emission and 5,6,11,12-tetraphenylnaphthacene (rubrene) absorption. With the calculation of Foerster radius and average distance between FIrpic molecules, we have related the calculated ratio between the number of FIrpic molecules within to that out of Foerster radius with the degree of Foerster energy transfer from EL spectra measured in the experiment. Experimental results were found to fit well with the predicted results especially at low rubrene concentrations. - Highlights: > Foerster energy transfer between FIrpic and rubrene. > Energy transfer shows an abnormal evolution of emission spectrum. > Calculated Foerster radius and degree of energy transfer by a simple model.

  2. A single-layer peptide nanofiber for enhancing the cytotoxicity of trastuzumab (anti-HER)

    Energy Technology Data Exchange (ETDEWEB)

    Malik, Ruchi; Wagh, Anil; Qian, Steven; Law, Benedict, E-mail: Shek.law@ndsu.edu [College of Pharmacy, Nursing, and Allied Sciences, North Dakota State University, Department of Pharmaceutical Sciences (United States)

    2013-06-15

    A multivalent system is often employed to enhance the effectiveness of a targeted therapy. In the present study, we report a single-layer peptide nanofiber (NFP) as a multivalent targeting platform to improve the cytotoxicity of trastuzumab (anti-HER), a monoclonal antibody targeting the human epidermal growth factor receptor 2 (HER-2) in approximately 20 % of breast cancer patients. The trastuzumab-conjugated nanofiber (anti-HER/NFP) was 100 Multiplication-Sign 4 nm in size and was assembled from multiple peptide units (mPEG-BK(FITC)SGASNRA-kldlkldlkldl-CONH{sub 2}). The optimized preparation was attached with approximately 10 antibodies at the surface. Because of an increase in the multivalency, anti-HER/NFP was able to truncate more cell surface HER-2 and, thus, showed an enhanced cytotoxicity toward HER-2 positive SKBr-3 human breast cancer as compared to the free anti-HER. Western blot analysis and fluorescence microscopic studies confirmed that there was a significant downregulation of the HER-2 level and also inhibition of the cell survival cell signaling pathways including the phosphatidylinositol 3-kinase (PI3K) and the mitogen activated protein kinase (MAPK) pathway. Our data suggested that NFP can be useful as a multivalent platform for immunotherapy, especially in combination with other chemotherapeutic agents in the future.

  3. The Stability of New Single-Layer Combined Lattice Shell Based on Aluminum Alloy Honeycomb Panels

    Directory of Open Access Journals (Sweden)

    Caiqi Zhao

    2017-11-01

    Full Text Available This article proposes a new type of single-layer combined lattice shell (NSCLS; which is based on aluminum alloy honeycomb panels. Six models with initial geometric defect were designed and precision made using numerical control equipment. The stability of these models was tested. The results showed that the stable bearing capacity of NSCLS was approximately 16% higher than that of a lattice shell with the same span without a reinforcing plate. At the same time; the properties of the NSCLS were sensitive to defects. When defects were present; its stable bearing capacity was decreased by 12.3% when compared with the defect-free model. The model with random defects following a truncated Gaussian distribution could be used to simulate the distribution of defects in the NSCLS. The average difference between the results of the nonlinear analysis and the experimental results was 5.7%. By calculating and analyzing nearly 20,000 NSCLS; the suggested values of initial geometric defect were presented. The results of this paper could provide a theoretical basis for making and revising the design codes for this new combined lattice shell structure.

  4. Effect of cushioned or single layer semen centrifugation before sex sorting on frozen stallion semen quality.

    Science.gov (United States)

    Mari, G; Bucci, D; Love, C C; Mislei, B; Rizzato, G; Giaretta, E; Merlo, B; Spinaci, M

    2015-04-01

    The aim of this study was to compare the effect of presorting centrifugation (cushioned [CC] or single-layer colloid [SLC]), with simple dilution (SD), on the quality of sex-sorted stallion semen before and after sorting and after freezing and thawing. Four ejaculates from each of two fertile stallions were collected 1 week apart and evaluated for percent total sperm motility (TM), percent viable acrosome-intact sperm (VAI), and DNA quality (percentage of DNA fragmentation index). Freezing caused, independently from CC and SLC treatments, a significant decrease of TM (P < 0.05) and VAI (P < 0.05) in both unsorted and sorted semen. On the other hand, sorting did not impair TM and VAI and, interestingly, improved DNA quality in all treatments only before freezing (28 vs 13, 28 vs 10, 22 vs 7 in SD, CC, and SLC for unsorted vs sorted groups, respectively; P < 0.05); this positive effect was lost in the same samples after freezing and thawing, suggesting that the freezing process reduces the DNA quality of sex-sorted sperm. Our results suggest that CC and SLC are not able to select those spermatozoa that possess a better ability to withstand sperm processing associated with sperm sorting and freezing. Copyright © 2015 Elsevier Inc. All rights reserved.

  5. Single layer centrifugation-selected boar spermatozoa are capable of fertilization in vitro

    Science.gov (United States)

    2013-01-01

    Background Good quality spermatozoa are important to achieve fertilization, viable embryos and offspring. Single Layer Centrifugation (SLC) through a colloid (Androcoll-P) selects good quality spermatozoa. However, it has not been established previously whether porcine spermatozoa selected by this method maintain their fertility. Methods The semen was prepared either by SLC or by standard centrifugation (control) and used for in vitro fertilization (IVF) at oocyte:spermatozoa ratios of 1:50; 1:100 and 1:300 (or 4 x 103, 8 x 103 and 24 x 103 spermatozoa/ml) to evaluate their subsequent ability to generate blastocysts. In addition, sperm motility was assessed by computer assisted sperm motility analysis. Results Total and progressive motility were significantly higher in sperm samples prepared by SLC compared to uncentrifuged samples. Sperm binding ability, polyspermy, cleavage and blastocyst rates were affected by the oocyte:sperm ratio, but not by sperm treatment. Conclusion The use of SLC does not adversely affect the in vitro fertilizing and embryo-generating ability of the selected spermatozoa compared to their unselected counterparts, but further modifications in the IVF conditions would be needed to improve the monospermy in IVF systems. Since SLC did not appear to have a negative effect on sperm fertilizing ability, and may in fact select for spermatozoa with a greater potential for fertilization, an in vivo trial to determine the usefulness of this sperm preparation technique prior to artificial insemination is warranted. PMID:23497680

  6. Local Electronic Structure of a Single-Layer Porphyrin-Containing Covalent Organic Framework

    KAUST Repository

    Chen, Chen

    2017-12-20

    We have characterized the local electronic structure of a porphyrin-containing single-layer covalent organic framework (COF) exhibiting a square lattice. The COF monolayer was obtained by the deposition of 2,5-dimethoxybenzene-1,4-dicarboxaldehyde (DMA) and 5,10,15,20-tetrakis(4-aminophenyl) porphyrin (TAPP) onto a Au(111) surface in ultrahigh vacuum followed by annealing to facilitate Schiff-base condensations between monomers. Scanning tunneling spectroscopy (STS) experiments conducted on isolated TAPP precursor molecules and the covalently linked COF networks yield similar transport (HOMO-LUMO) gaps of 1.85 ± 0.05 eV and 1.98 ± 0.04 eV, respectively. The COF orbital energy alignment, however, undergoes a significant downward shift compared to isolated TAPP molecules due to the electron-withdrawing nature of the imine bond formed during COF synthesis. Direct imaging of the COF local density of states (LDOS) via dI/dV mapping reveals that the COF HOMO and LUMO states are localized mainly on the porphyrin cores and that the HOMO displays reduced symmetry. DFT calculations reproduce the imine-induced negative shift in orbital energies and reveal that the origin of the reduced COF wave function symmetry is a saddle-like structure adopted by the porphyrin macrocycle due to its interactions with the Au(111) substrate.

  7. On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

    2016-08-15

    The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  8. Growing vertical ZnO nanorod arrays within graphite: efficient isolation of large size and high quality single-layer graphene.

    Science.gov (United States)

    Ding, Ling; E, Yifeng; Fan, Louzhen; Yang, Shihe

    2013-07-18

    We report a unique strategy for efficiently exfoliating large size and high quality single-layer graphene directly from graphite into DMF dispersions by growing ZnO nanorod arrays between the graphene layers in graphite.

  9. Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications

    Science.gov (United States)

    Chiu, Yu Sheng; Luc, Quang Ho; Lin, Yueh Chin; Chien Huang, Jui; Dee, Chang Fu; Yeop Majlis, Burhanuddin; Chang, Edward Yi

    2017-09-01

    A plasma enhanced atomic layer deposition (PEALD) HfO2/AlN dielectric stack was used as the gate dielectric for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) for high-frequency power device applications. The capacitance-voltage (C-V) curves of the HfO2/AlN/GaN MOS capacitor (MOSCAP) showed a small frequency dispersion along with a very small hysteresis (˜50 mV). Moreover, the interface trap density (D it) was calculated to be 2.7 × 1011 cm-2 V-1 s-1 at 150 °C. Using PEALD-AlN as the interfacial passivation layer (IPL), the drain current of the HfO2/AlN MOS-HEMTs increased by about 46% and the gate leakage current decreased by six orders of magnitude as compared with those of the conventional Schottky gate AlGaN/GaN HEMTs processed using the same epitaxial wafer. The 0.3-µm-gate-length HfO2/AlN/AlGaN/GaN MOS-HEMTs demonstrated a 2.88 W/mm output power, a 23 dB power gain, a 30.2% power-added efficiency at 2.4 GHz, and an improved device linearity as compared with the conventional AlGaN/GaN HEMTs. The third-order intercept point at the output (OIP3) of the MOS-HEMTs was 28.4 as compared with that of 26.5 for the conventional GaN HEMTs. Overall, the MOS-HEMTs with a HfO2/AlN gate stack showed good potential for high-linearity RF power device applications.

  10. Influence of cutting parameters on the depth of subsurface deformed layer in nano-cutting process of single crystal copper.

    Science.gov (United States)

    Wang, Quanlong; Bai, Qingshun; Chen, Jiaxuan; Su, Hao; Wang, Zhiguo; Xie, Wenkun

    2015-12-01

    Large-scale molecular dynamics simulation is performed to study the nano-cutting process of single crystal copper realized by single-point diamond cutting tool in this paper. The centro-symmetry parameter is adopted to characterize the subsurface deformed layers and the distribution and evolution of the subsurface defect structures. Three-dimensional visualization and measurement technology are used to measure the depth of the subsurface deformed layers. The influence of cutting speed, cutting depth, cutting direction, and crystallographic orientation on the depth of subsurface deformed layers is systematically investigated. The results show that a lot of defect structures are formed in the subsurface of workpiece during nano-cutting process, for instance, stair-rod dislocations, stacking fault tetrahedron, atomic clusters, vacancy defects, point defects. In the process of nano-cutting, the depth of subsurface deformed layers increases with the cutting distance at the beginning, then decreases at stable cutting process, and basically remains unchanged when the cutting distance reaches up to 24 nm. The depth of subsurface deformed layers decreases with the increase in cutting speed between 50 and 300 m/s. The depth of subsurface deformed layer increases with cutting depth, proportionally, and basically remains unchanged when the cutting depth reaches over 6 nm.

  11. Identification of the Viscous Superlayer on the Low-Speed Side of a Single-Stream Shear Layer

    Science.gov (United States)

    Foss, John; Peabody, Jason

    2010-11-01

    Image pairs (elevation/plan views) have been acquired of a smoke streakline originating in the irrotational region on the low-speed side of a high Re single-stream shear layer of Morris and Foss (2003). The viscous superlayer (VSL) is identified as the terminus of the streak; 1800 such images provide VSL position statistics. Hot-wire data acquired concurrently at the shear layer edge and interior are used to investigate the relationship between these velocity magnitudes and the large-scale motions. Distinctive features (plumes) along the streakline are tracked between images to provide discrete irrotational region velocity magnitudes and material trajectories. A non-diffusive marker, introduced in the separating (high speed) boundary layer and imaged at x/θo=352, has revealed an unexpected bias in the streak-defined VSL locations. The interpretation of this bias clarifies the induced flow patterns in the entrainment region. The observations are consistent with a conception of the large-scale shear layer motions as "billows" of vortical fluid separated by re-entrant "wedges" of irrotational fluid, per Phillips (1972). Morris, S.C. and Foss, J.F. (2003). "Turbulent Boundary Layer to Single Stream Shear Layer: The Transition Region." Journal of Fluid Mechanics. Vol. 494, pp. 187-221. Phillips, O. M. (1972). "The Entrainment Interface." Journal of Fluid Mechanics. Vol. 51, pp. 97-118.

  12. Impact of adding a second-layer to a single unlocked closure of Cesarean uterine incision: a randomized controlled trial

    DEFF Research Database (Denmark)

    Rudnicki, Martin; Bennich, G; Wilken-Jensen, C

    2016-01-01

    The purpose of the present study was to investigate short- and long term effects on residual myometrial thickness (RMT) by adding a second-layer to a single unlocked closure of caesarean uterine incision. METHOD: he study was a randomized double-blind controlled trial. Healthy nulliparous scheduled...

  13. Thermal expansion, anharmonicity and temperature-dependent Raman spectra of single- and few-layer MoSe₂ and WSe₂.

    Science.gov (United States)

    Late, Dattatray J; Shirodkar, Sharmila N; Waghmare, Umesh V; Dravid, Vinayak P; Rao, C N R

    2014-06-06

    We report the temperature-dependent Raman spectra of single- and few-layer MoSe2 and WSe2 in the range 77-700 K. We observed linear variation in the peak positions and widths of the bands arising from contributions of anharmonicity and thermal expansion. After characterization using atomic force microscopy and high-resolution transmission electron microscopy, the temperature coefficients of the Raman modes were determined. Interestingly, the temperature coefficient of the A(2)(2u) mode is larger than that of the A(1g) mode, the latter being much smaller than the corresponding temperature coefficients of the same mode in single-layer MoS2 and of the G band of graphene. The temperature coefficients of the two modes in single-layer MoSe2 are larger than those of the same modes in single-layer WSe2. We have estimated thermal expansion coefficients and temperature dependence of the vibrational frequencies of MoS2 and MoSe2 within a quasi-harmonic approximation, with inputs from first-principles calculations based on density functional theory. We show that the contrasting temperature dependence of the Raman-active mode A(1g) in MoS2 and MoSe2 arises essentially from the difference in their strain-phonon coupling. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. One-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film.

    Science.gov (United States)

    Ho, Kuan-I; Liao, Jia-Hong; Huang, Chi-Hsien; Hsu, Chang-Lung; Zhang, Wenjing; Lu, Ang-Yu; Li, Lain-Jong; Lai, Chao-Sung; Su, Ching-Yuan

    2014-03-12

    In this study, the scalable and one-step fabrication of single atomic-layer transistors is demonstrated by the selective fluorination of graphene using a low-damage CF4 plasma treatment, where the generated F-radicals preferentially fluorinated the graphene at low temperature (semiconductor/insulator can be directly formed in a single layer of graphene using a one-step fluorination process by introducing a Au thin-film as a buffer layer. With this heterojunction structure, it would be possible to fabricate transistors in a single graphene film via a one-step fluorination process, in which pristine graphene, partial F-graphene, and highly F-graphene serve as the source/drain contacts, the channel, and the channel isolation in a transistor, respectively. The demonstrated graphene transistor exhibits an on-off ratio above 10, which is 3-fold higher than that of devices made from pristine graphene. This efficient transistor fabrication method produces electrical heterojunctions of graphene over a large area and with selective patterning, providing the potential for the integration of electronics down to the single atomic-layer scale. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Spin-dependent electron-phonon coupling in the valence band of single-layer WS2

    DEFF Research Database (Denmark)

    Hinsche, Nicki Frank; Ngankeu, Arlette S.; Guilloy, Kevin

    2017-01-01

    The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single-layer transition-metal dichalchogenides such as MoS2 or WS2. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin....... Here, the electron-phonon coupling in the valence band maximum of single-layer WS2 is studied by first-principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of λK=0.0021 and 0.......40 for the upper and lower spin-split valence band of the freestanding layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment but it remains significant, in good agreement with the experimental results....

  16. Interface characteristics of spin-on-dielectric SiOx-buffered passivation layers for AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Ko, Pil-Seok; Park, Kyoung-Seok; Yoon, Yeo-Chang; Sheen, Mi-Hyang; Kim, Sam-Dong

    2015-01-01

    To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO x -buffered passivation structure compared to the conventional Si 3 N 4 passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si 3 N 4 passivation was in the range of 10 12 –10 13 cm −2 eV −1 , which is one-order higher than that of the SOD (10 11 –10 12 cm −2 eV −1 ) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si 3 N 4 passivation. A well-resolved reduction of the electron Hall mobility of the Si 3 N 4 passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. - Highlights: • Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs • Characterize the charge density and interface states using the C–V measurements • SOD-buffered passivation minimizes surface states at the interface. • DC performance of SOD-buffered structure is due to the interface characteristics

  17. Interface characteristics of spin-on-dielectric SiO{sub x}-buffered passivation layers for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Pil-Seok; Park, Kyoung-Seok; Yoon, Yeo-Chang [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of); Sheen, Mi-Hyang [Department of Materials Science Engineering, Seoul National University, 151-742 Seoul (Korea, Republic of); Kim, Sam-Dong, E-mail: samdong@dongguk.edu [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of)

    2015-08-31

    To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO{sub x}-buffered passivation structure compared to the conventional Si{sub 3}N{sub 4} passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si{sub 3}N{sub 4} passivation was in the range of 10{sup 12}–10{sup 13} cm{sup −2} eV{sup −1}, which is one-order higher than that of the SOD (10{sup 11}–10{sup 12} cm{sup −2} eV{sup −1}) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si{sub 3}N{sub 4} passivation. A well-resolved reduction of the electron Hall mobility of the Si{sub 3}N{sub 4} passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. - Highlights: • Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs • Characterize the charge density and interface states using the C–V measurements • SOD-buffered passivation minimizes surface states at the interface. • DC performance of SOD-buffered structure is due to the interface characteristics.

  18. Seamless lamination of a concave-convex architecture with single-layer graphene

    Science.gov (United States)

    Park, Ji-Hoon; Lim, Taekyung; Baik, Jaeyoon; Seo, Keumyoung; Moon, Youngkwon; Park, Noejung; Shin, Hyun-Joon; Kyu Kwak, Sang; Ju, Sanghyun; Real Ahn, Joung

    2015-10-01

    Graphene has been used as an electrode and channel material in electronic devices because of its superior physical properties. Recently, electronic devices have changed from a planar to a complicated three-dimensional (3D) geometry to overcome the limitations of planar devices. The evolution of electronic devices requires that graphene be adaptable to a 3D substrate. Here, we demonstrate that chemical-vapor-deposited single-layer graphene can be transferred onto a silicon dioxide substrate with a 3D geometry, such as a concave-convex architecture. A variety of silicon dioxide concave-convex architectures were uniformly and seamlessly laminated with graphene using a thermal treatment. The planar graphene was stretched to cover the concave-convex architecture, and the resulting strain on the curved graphene was spatially resolved by confocal Raman spectroscopy; molecular dynamic simulations were also conducted and supported the observations. Changes in electrical resistivity caused by the spatially varying strain induced as the graphene-silicon dioxide laminate varies dimensionally from 2D to 3D were measured by using a four-point probe. The resistivity measurements suggest that the electrical resistivity can be systematically controlled by the 3D geometry of the graphene-silicon dioxide laminate. This 3D graphene-insulator laminate will broaden the range of graphene applications beyond planar structures to 3D materials.Graphene has been used as an electrode and channel material in electronic devices because of its superior physical properties. Recently, electronic devices have changed from a planar to a complicated three-dimensional (3D) geometry to overcome the limitations of planar devices. The evolution of electronic devices requires that graphene be adaptable to a 3D substrate. Here, we demonstrate that chemical-vapor-deposited single-layer graphene can be transferred onto a silicon dioxide substrate with a 3D geometry, such as a concave-convex architecture. A

  19. Note: Laser ablation technique for electrically contacting a buried implant layer in single crystal diamond

    International Nuclear Information System (INIS)

    Ray, M. P.; Baldwin, J. W.; Butler, J. E.; Pate, B. B.; Feygelson, T. I.

    2011-01-01

    The creation of thin, buried, and electrically conducting layers within an otherwise insulating diamond by annealed ion implantation damage is well known. Establishing facile electrical contact to the shallow buried layer has been an unmet challenge. We demonstrate a new method, based on laser micro-machining (laser ablation), to make reliable electrical contact to a buried implant layer in diamond. Comparison is made to focused ion beam milling.

  20. Structural properties 3,16-bis triisopropylsilylethynyl (pentacene) (TIPS-pentacene) thin films onto organic dielectric layer using slide coating method

    International Nuclear Information System (INIS)

    Rusnan, Fara Naila; Mohamad, Khairul Anuar; Seria, Dzul Fahmi Mohd Husin; Saad, Ismail; Ghosh, Bablu K.; Alias, Afishah

    2015-01-01

    3,16-bis triisopropylsilylethynyl (Pentacene) (TIPS-Pentacene) compactable interface property is important in order to have a good arrangement of molecular structure. Comparison for TIPS-Pentacene deposited between two different surface layers conducted. 0.1wt% TIPS-Pentacene diluted in chloroform were deposited onto poly(methylmeaclyrate) (PMMA) layered transparent substrates using slide coating method. X-ray diffraction (XRD) used to determine crystallinity of thin films. Series of (00l) diffraction peaks obtained with sharp first peaks (001) for TIPS-Pentacene deposited onto PMMA layer at 5.35° and separation of 16.3 Å. Morphology and surface roughness were carried out using scanning electron microscope (SEM) and surface profilemeter LS500, respectively.TIPS-Pentacene deposited onto PMMA layer formed needled-like-shape grains with 10.26 nm surface roughness. These properties were related as thin film formed and its surface roughness plays important role towards good mobility devices

  1. Structural properties 3,16-bis triisopropylsilylethynyl (pentacene) (TIPS-pentacene) thin films onto organic dielectric layer using slide coating method

    Energy Technology Data Exchange (ETDEWEB)

    Rusnan, Fara Naila; Mohamad, Khairul Anuar; Seria, Dzul Fahmi Mohd Husin; Saad, Ismail; Ghosh, Bablu K.; Alias, Afishah [Nano Engineering & Materials (NEMs) Research Group, Faculty of Engineering Universiti Malaysia Sabah, Kota Kinabalu 88400 Sabah (Malaysia)

    2015-08-28

    3,16-bis triisopropylsilylethynyl (Pentacene) (TIPS-Pentacene) compactable interface property is important in order to have a good arrangement of molecular structure. Comparison for TIPS-Pentacene deposited between two different surface layers conducted. 0.1wt% TIPS-Pentacene diluted in chloroform were deposited onto poly(methylmeaclyrate) (PMMA) layered transparent substrates using slide coating method. X-ray diffraction (XRD) used to determine crystallinity of thin films. Series of (00l) diffraction peaks obtained with sharp first peaks (001) for TIPS-Pentacene deposited onto PMMA layer at 5.35° and separation of 16.3 Å. Morphology and surface roughness were carried out using scanning electron microscope (SEM) and surface profilemeter LS500, respectively.TIPS-Pentacene deposited onto PMMA layer formed needled-like-shape grains with 10.26 nm surface roughness. These properties were related as thin film formed and its surface roughness plays important role towards good mobility devices.

  2. Determination of the optimized single-layer ionospheric height for electron content measurements over China

    Science.gov (United States)

    Li, Min; Yuan, Yunbin; Zhang, Baocheng; Wang, Ningbo; Li, Zishen; Liu, Xifeng; Zhang, Xiao

    2018-02-01

    The ionosphere effective height (IEH) is a very important parameter in total electron content (TEC) measurements under the widely used single-layer model assumption. To overcome the requirement of a large amount of simultaneous vertical and slant ionospheric observations or dense "coinciding" pierce points data, a new approach comparing the converted vertical TEC (VTEC) value using mapping function based on a given IEH with the "ground truth" VTEC value provided by the combined International GNSS Service Global Ionospheric Maps is proposed for the determination of the optimal IEH. The optimal IEH in the Chinese region is determined using three different methods based on GNSS data. Based on the ionosonde data from three different locations in China, the altitude variation of the peak electron density (hmF2) is found to have clear diurnal, seasonal and latitudinal dependences, and the diurnal variation of hmF2 varies from approximately 210 to 520 km in Hainan. The determination of the optimal IEH employing the inverse method suggested by Birch et al. (Radio Sci 37, 2002. doi: 10.1029/2000rs002601) did not yield a consistent altitude in the Chinese region. Tests of the method minimizing the mapping function errors suggested by Nava et al. (Adv Space Res 39:1292-1297, 2007) indicate that the optimal IEH ranges from 400 to 600 km, and the height of 450 km is the most frequent IEH at both high and low solar activities. It is also confirmed that the IEH of 450-550 km is preferred for the Chinese region instead of the commonly adopted 350-450 km using the determination method of the optimal IEH proposed in this paper.

  3. Electronic and optical properties of vacancy defects in single-layer transition metal dichalcogenides

    Science.gov (United States)

    Khan, M. A.; Erementchouk, Mikhail; Hendrickson, Joshua; Leuenberger, Michael N.

    2017-06-01

    A detailed first-principles study has been performed to evaluate the electronic and optical properties of single-layer (SL) transition metal dichalcogenides (TMDCs) (M X 2 ; M = transition metal such as Mo, W, and X = S, Se, Te), in the presence of vacancy defects (VDs). Defects usually play an important role in tailoring electronic, optical, and magnetic properties of semiconductors. We consider three types of VDs in SL TMDCs: (i) X vacancy, (ii) X2 vacancy, and (iii) M vacancy. We show that VDs lead to localized defect states (LDS) in the band structure, which in turn gives rise to sharp transitions in in-plane and out-of-plane optical susceptibilities, χ∥ and χ⊥. The effects of spin-orbit coupling (SOC) are also considered. We find that SOC splitting in LDS is directly related to the atomic number of the transition metal atoms. Apart from electronic and optical properties we also find magnetic signatures (local magnetic moment of ˜μB ) in MoSe2 in the presence of the Mo vacancy, which breaks the time-reversal symmetry and therefore lifts the Kramers degeneracy. We show that a simple qualitative tight-binding model (TBM), involving only the hopping between atoms surrounding the vacancy with an on-site SOC term, is sufficient to capture the essential features of LDS. In addition, the existence of the LDS can be understood from the solution of the two-dimensional Dirac Hamiltonian by employing infinite mass boundary conditions. In order to provide a clear description of the optical absorption spectra, we use group theory to derive the optical selection rules between LDS for both χ∥ and χ⊥.

  4. Structure and Electronic Properties of In Situ Synthesized Single-Layer MoS2 on a Gold Surface

    DEFF Research Database (Denmark)

    Sørensen, Signe Grønborg; Füchtbauer, Henrik Gøbel; Tuxen, Anders Kyrme

    2014-01-01

    with scanning tunneling microscopy and X-ray photoelectron spectroscopy characterization of two-dimensional single-layer islands of MoS2 synthesized directly on a gold single crystal substrate. Thanks to a periodic modulation of the atom stacking induced by the lattice mismatch, we observe a structural buckling...... structure appears modified at the band gap edges. This electronic effect is further modulated by the moiré periodicity and leads to small substrate-induced electronic perturbations near the conduction band minimum in the band gap of MoS2. The results may be highly relevant in the context of nanopatterned......When transition metal sulfides such as MoS2 are present in the single-layer form, the electronic properties change in fundamental ways, enabling them to be used, e.g., in two-dimensional semiconductor electronics, optoelectronics, and light harvesting. The change is related to a subtle modification...

  5. A small biomimetic quadruped robot driven by multistacked dielectric elastomer actuators

    International Nuclear Information System (INIS)

    Nguyen, Canh Toan; Phung, Hoa; Nguyen, Tien Dat; Lee, Choonghan; Kim, Uikyum; Lee, Donghyouk; Moon, Hyungpil; Koo, Jachoon; Choi, Hyouk Ryeol; Nam, Jae-do

    2014-01-01

    A kind of dielectric elastomer (DE) material, called ‘synthetic elastomer’, has been developed based on acrylonitrile butadiene rubber (NBR) to be used as a dielectric elastomer actuator (DEA). By stacking single layers of synthetic elastomer, a linear actuator, called a multistacked actuator, is produced, and used by mechatronic and robotic systems to generate linear motion. In this paper, we demonstrate the application of the multistacked dielectric elastomer actuator in a biomimetic legged robot. A miniature robot driven by a biomimetic actuation system with four 2-DOF (two-degree-of-freedom) legged mechanisms is realized. Based on the experimental results, we evaluate the performance of the proposed robot and validate the feasibility of the multistacked actuator in a locomotion system as a replacement for conventional actuators. (paper)

  6. Temporal and spatial evolution characteristics of disturbance wave in a hypersonic boundary layer due to single-frequency entropy disturbance.

    Science.gov (United States)

    Wang, Zhenqing; Tang, Xiaojun; Lv, Hongqing; Shi, Jianqiang

    2014-01-01

    By using a high-order accurate finite difference scheme, direct numerical simulation of hypersonic flow over an 8° half-wedge-angle blunt wedge under freestream single-frequency entropy disturbance is conducted; the generation and the temporal and spatial nonlinear evolution of boundary layer disturbance waves are investigated. Results show that, under the freestream single-frequency entropy disturbance, the entropy state of boundary layer is changed sharply and the disturbance waves within a certain frequency range are induced in the boundary layer. Furthermore, the amplitudes of disturbance waves in the period phase are larger than that in the response phase and ablation phase and the frequency range in the boundary layer in the period phase is narrower than that in these two phases. In addition, the mode competition, dominant mode transformation, and disturbance energy transfer exist among different modes both in temporal and in spatial evolution. The mode competition changes the characteristics of nonlinear evolution of the unstable waves in the boundary layer. The development of the most unstable mode along streamwise relies more on the motivation of disturbance waves in the upstream than that of other modes on this motivation.

  7. Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Sołtys, Jakub; Piechota, Jacek; Ptasinska, Maria [Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, 02-106 Warsaw (Poland); Krukowski, Stanisław, E-mail: stach@unipress.waw.pl [Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, 02-106 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland)

    2014-08-28

    Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and “wizard hat” parabolic for rhombohedral (ABCA) stacking.

  8. Single-layer ZnS supported on Au(111): A combined XPS, LEED, STM and DFT study

    Science.gov (United States)

    Deng, Xingyi; Sorescu, Dan C.; Lee, Junseok

    2017-04-01

    Single-layer of ZnS, consisting of one atomic layer of ZnS(111) plane, has been grown on Au(111) and characterized using X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While the LEED measurement indicates a coincidence structure of ZnS-(3×3)/Au(111)-(4×4), high resolution STM images reveal hexagonal unit cells of 6.7×6.7 Å2 and 11.6×11.6 Å2, corresponding to √3 and 3 times the unit cell of the ideal zincblende ZnS-(1×1), respectively, depending on the tunneling conditions. Calculations based on density functional theory (DFT) indicate a significantly reconstructed non-planar structure of ZnS single-layer on Au(111) with 2/3 of the S anions being located nearly in the plane of the Zn cations and the rest 1/3 of the S anions protruding above the Zn plane. The calculated STM image shows similar characteristics to those of the experimental STM image. Additionally, the DFT calculations reveal the different bonding nature of the S anions in ZnS single-layer supported on Au(111).

  9. Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

    CERN Document Server

    Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

    2003-01-01

    We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

  10. Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Morgado, Jorge [Instituto de Telecomunicacoes and Departamento de Engenharia Quimica, Instituto Superior Tecnico, Avenida Rovisco Pais, P-1049-001 Lisbon (Portugal); Barbagallo, Nunzio [Instituto de Telecomunicacoes and Departamento de Engenharia Quimica, Instituto Superior Tecnico, Avenida Rovisco Pais, P-1049-001 Lisbon (Portugal); Charas, Ana [Instituto de Telecomunicacoes and Departamento de Engenharia Quimica, Instituto Superior Tecnico, Avenida Rovisco Pais, P-1049-001 Lisbon (Portugal); Matos, Manuel [Departamento de Engenharia Quimica, Instituto Superior de Engenharia de Lisboa, Rua Conselheiro Emidio Navarro-1, P-1949-001 Lisbon (Portugal); Alcacer, Luis [Instituto de Telecomunicacoes and Departamento de Engenharia Quimica, Instituto Superior Tecnico, Avenida Rovisco Pais, P-1049-001 Lisbon (Portugal); Cacialli, Franco [Department of Physics and Astronomy, University College London, Gower Street, London, WC1E 6BT (United Kingdom)

    2003-03-07

    We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

  11. Dielectric Elastomers for Fluidic and Biomedical Applications

    Science.gov (United States)

    McCoul, David James

    Dielectric elastomers have demonstrated tremendous potential as high-strain electromechanical transducers for a myriad of novel applications across all engineering disciplines. Because their soft, viscoelastic mechanical properties are similar to those of living tissues, dielectric elastomers have garnered a strong foothold in a plethora of biomedical and biomimetic applications. Dielectric elastomers consist of a sheet of stretched rubber, or elastomer, coated on both sides with compliant electrode materials; application of a voltage generates an electrostatic pressure that deforms the elastomer. They can function as soft generators, sensors, or actuators, and this last function is the focus of this dissertation. Many design configurations are possible, such as stacks, minimum energy structures, interpenetrating polymer networks, shape memory dielectric elastomers, and others; dielectric elastomers are already being applied to many fields of biomedicine. The first part of the original research presented in this dissertation details a PDMS microfluidic system paired with a dielectric elastomer stack actuator of anisotropically prestrained VHB(TM) 4910 (3M(TM)) and single-walled carbon nanotubes. These electroactive microfluidic devices demonstrated active increases in microchannel width when 3 and 4 kV were applied. Fluorescence microscopy also indicated an accompanying increase in channel depth with actuation. The cross-sectional area strains at 3 and 4 kV were approximately 2.9% and 7.4%, respectively. The device was then interfaced with a syringe pump, and the pressure was measured upstream. Linear pressure-flow plots were developed, which showed decreasing fluidic resistance with actuation, from 0.192 psi/(microL/min) at 0 kV, to 0.160 and 0.157 psi/(microL/min) at 3 and 4 kV, respectively. This corresponds to an ~18% drop in fluidic resistance at 4 kV. Active de-clogging was tested in situ with the device by introducing ~50 microm diameter PDMS microbeads and

  12. Electrical hysteresis in p-GaN metal-oxide-semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric

    Science.gov (United States)

    Zhang, Kexiong; Liao, Meiyong; Imura, Masataka; Nabatame, Toshihide; Ohi, Akihiko; Sumiya, Masatomo; Koide, Yasuo; Sang, Liwen

    2016-12-01

    The electrical hysteresis in current-voltage (I-V) and capacitance-voltage characteristics was observed in an atomic-layer-deposited Al2O3/p-GaN metal-oxide-semiconductor capacitor (PMOSCAP). The absolute minimum leakage currents of the PMOSCAP for forward and backward I-V scans occurred not at 0 V but at -4.4 and +4.4 V, respectively. A negative flat-band voltage shift of 5.5 V was acquired with a capacitance step from +4.4 to +6.1 V during the forward scan. Mg surface accumulation on p-GaN was demonstrated to induce an Mg-Ga-Al-O oxidized layer with a trap density on the order of 1013 cm-2. The electrical hysteresis is attributed to the hole trapping and detrapping process in the traps of the Mg-Ga-Al-O layer via the Poole-Frenkel mechanism.

  13. ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

    Science.gov (United States)

    Babadi, Aein S.; Lind, Erik; Wernersson, Lars-Erik

    2016-03-01

    The electrical properties of ZrO2 and HfO2 gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance-voltage (C-V) measurements exhibit a total trap density profile with a minimum of 1 × 1012 cm-2 eV-1 and 4 × 1012 cm-2 eV-1 for ZrO2 and HfO2, respectively, both of which are comparable to the best values reported for high-κ/III-V devices. Our simulations showed that the measured capacitance is to a large extent affected by the border trap response suggesting a very low density of interface traps. Charge trapping in MOS structures was also investigated using the hysteresis in the C-V measurements. The experimental results demonstrated that the magnitude of the hysteresis increases with increase in accumulation voltage, indicating an increase in the charge trapping response.

  14. ZrO{sub 2} and HfO{sub 2} dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

    Energy Technology Data Exchange (ETDEWEB)

    Babadi, Aein S., E-mail: Aein.Shiri-Babadi@EIT.LTH.SE; Lind, Erik; Wernersson, Lars-Erik [Department of Electrical and Information Technology, Lund University, Lund SE-22100 (Sweden)

    2016-03-28

    The electrical properties of ZrO{sub 2} and HfO{sub 2} gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance–voltage (C–V) measurements exhibit a total trap density profile with a minimum of 1 × 10{sup 12 }cm{sup −2} eV{sup −1} and 4 × 10{sup 12 }cm{sup −2} eV{sup −1} for ZrO{sub 2} and HfO{sub 2}, respectively, both of which are comparable to the best values reported for high-κ/III-V devices. Our simulations showed that the measured capacitance is to a large extent affected by the border trap response suggesting a very low density of interface traps. Charge trapping in MOS structures was also investigated using the hysteresis in the C–V measurements. The experimental results demonstrated that the magnitude of the hysteresis increases with increase in accumulation voltage, indicating an increase in the charge trapping response.

  15. Reversible Single-Crystal-to-Single-Crystal Structural Transformation in a Mixed-Ligand 2D Layered Metal-Organic Framework: Structural Characterization and Sorption Study

    Directory of Open Access Journals (Sweden)

    Chih-Chieh Wang

    2017-12-01

    Full Text Available A 3D supramolecular network, [Cd(bipy(C4O4(H2O2]·3H2O (1 (bipy = 4,4′-bipyridine and C4O42− = dianion of H2C4O4, constructed by mixed-ligand two-dimensional (2D metal-organic frameworks (MOFs has been reported and structurally determined by the single-crystal X-ray diffraction method and characterized by other physicochemical methods. In 1, the C4O42− and bipy both act as bridging ligands connecting the Cd(II ions to form a 2D layered MOF, which are then extended to a 3D supramolecular network via the mutually parallel and interpenetrating arrangements among the 2D-layered MOFs. Compound 1 shows a two-step dehydration process with weight losses of 11.0% and 7.3%, corresponding to the weight-loss of three guest and two coordinated water molecules, respectively, and exhibits an interesting reversible single-crystal-to-single-crystal (SCSC structural transformation upon de-hydration and re-hydration for guest water molecules. The SCSC structural transformation have been demonstrated and monitored by single-crystal and X-ray powder diffraction, and thermogravimetic analysis studies.

  16. Enhanced luminance of MEH-PPV based PLEDs using single walled carbon nanotube composite as an electron transporting layer

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Inderpreet, E-mail: inderpreetsingh_05@rediffmail.co [Materials Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); Madhwal, Devinder; Verma, A.; Kumar, A.; Rait, S. [Materials Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); Kaur, I.; Bharadwaj, L.M. [Central Scientific Instruments Organization, Sector-30, Chandigarh (India); Bhatia, C.S. [Department of Electrical and Computer Engineering, National University of Singapore (Singapore); Bhatnagar, P.K.; Mathur, P.C. [Materials Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India)

    2010-11-15

    An efficient electron transporting layer (ETL) based on single walled carbon nanotube (SWCNT) composites has been developed for poly [2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) based orange polymer light emitting diodes (PLEDs) and its effect on the performance of PLEDs has been examined. It is observed that with increase in SWCNT concentration, in ETL, the luminance and luminous efficiency of the PLEDs increase (about 5 times increase in luminance is observed at 5% w/w SWCNT concentration). The SWCNTs present in the MEH-PPV ETL boost the mobility of electrons injected from the cathode towards the emissive layer by establishing highly conducting percolation paths. This balances the concentration of holes and electrons in the emissive layer, which leads to enhanced emission from the PLEDs.

  17. Efficient polymer white-light-emitting diodes with a single-emission layer of fluorescent polymer blend

    International Nuclear Information System (INIS)

    Niu Qiaoli; Xu Yunhua; Jiang Jiaxing; Peng Junbiao; Cao Yong

    2007-01-01

    Efficient polymer white-light-emitting diodes (WPLEDs) have been fabricated with a single layer of fluorescent polymer blend. The device structure consists of ITO/PEDOT/PVK/emissive layer/Ba/Al. The emissive layer is a blend of poly(9,9-dioctylfluorene) (PFO), phenyl-substituted PPV derivative (P-PPV) and a copolymer of 9,9-dioctylfluorene and 4,7-di(4-hexylthien-2-yl)-2,1,3-benzothiadiazole (PFO-DHTBT), which, respectively, emits blue, green and red light. The emission of pure and efficient white light was implemented by tuning the blend weight ratio of PFO: P-PPV: PFO-DHTBT to 96:4:0.4. The maximum current efficiency and luminance are, respectively, 7.6 cd/A at 6.7 V and 11930 cd/m 2 at 11.2 V. The CIE coordinates of white-light emission were stable with the drive voltages

  18. Super dielectric capacitor using scaffold dielectric

    OpenAIRE

    Phillips, Jonathan

    2018-01-01

    Patent A capacitor having first and second electrodes and a scaffold dielectric. The scaffold dielectric comprises an insulating material with a plurality of longitudinal channels extending across the dielectric and filled with a liquid comprising cations and anions. The plurality of longitudinal channels are substantially parallel and the liquid within the longitudinal channels generally has an ionic strength of at least 0.1. Capacitance results from the migrations of...

  19. Single versus double-layer uterine closure at cesarean: impact on lower uterine segment thickness at next pregnancy.

    Science.gov (United States)

    Vachon-Marceau, Chantale; Demers, Suzanne; Bujold, Emmanuel; Roberge, Stephanie; Gauthier, Robert J; Pasquier, Jean-Charles; Girard, Mario; Chaillet, Nils; Boulvain, Michel; Jastrow, Nicole

    2017-07-01

    Uterine rupture is a potential life-threatening complication during a trial of labor after cesarean delivery. Single-layer closure of the uterus at cesarean delivery has been associated with an increased risk of uterine rupture compared with double-layer closure. Lower uterine segment thickness measurement by ultrasound has been used to evaluate the quality of the uterine scar after cesarean delivery and is associated with the risk of uterine rupture. To estimate the impact of previous uterine closure on lower uterine segment thickness. Women with a previous single low-transverse cesarean delivery were recruited at 34-38 weeks' gestation. Transabdominal and transvaginal ultrasound evaluation of the lower uterine segment thickness was performed by a sonographer blinded to clinical data. Previous operative reports were reviewed to obtain the type of previous uterine closure. Third-trimester lower uterine segment thickness at the next pregnancy was compared according to the number of layers sutured and according to the type of thread for uterine closure, using weighted mean differences and multivariate logistic regression analyses. Of 1613 women recruited, with operative reports available, 495 (31%) had a single-layer and 1118 (69%) had a double-layer closure. The mean third-trimester lower uterine segment thickness was 3.3 ± 1.3 mm and the proportion with lower uterine segment thickness cesarean delivery is associated with a thicker third-trimester lower uterine segment and a reduced risk of lower uterine segment thickness <2.0 mm in the next pregnancy. The type of thread for uterine closure has no significant impact on lower uterine segment thickness. Copyright © 2017 Elsevier Inc. All rights reserved.

  20. The peculiar effect of forest dislocations on single twin layer development in zinc and beryllium single crystals

    International Nuclear Information System (INIS)

    Lavrentev, F.F.; Bosin, M.E.

    1978-01-01

    This is an investigation of the effect of different types of forest dislocation on the rate of twin layer broadening, Vsub(n), in zinc and beryllium crystals, and on the velocity of the twinning dislocation movement, Vsub(t), in zinc crystals under the action of a constant external shear stress. Increasing the forest basal dislocation density, rhosub(b), was found to result in increasing Vsub(n) and reducing Vsub(t), while increasing the forest pyramidal dislocation density, rhosub(p), causes Vsub(n) to decrease. An analysis in terms of crystal geometry shows that the dualism of the influence of the basal dislocations stems from the fact that they behave as twinning dislocation sources whose density, increasing with rhosub(b) leads to higher Vsub(n). The decrease in the effective stress, tausup(*), with increasing rhosub(b) is estimated. An analysis of the experimental data yielded the relation Vsub(t)(tausup(*)) and an estimate of the activation volume, which amounted to 6 x 10 -21 cm 3 . The close coincidence of the activation volumes as obtained from Vsub(t)(tausup(*)) and Vsub(n)(tau) suggests that the rate-controlling mechanism of the twin layer development in zinc crystals with large forest basal dislocation density is the twinning dislocation inhibition. In Be crystals, the increasing Vsub(n) effect is observed during untwinning. In Be twinned crystals, electron microscopy revealed twinning dislocations with a density of about 10 5 cm -1 at the twin boundaries and a large forest basal dislocation density inside the twin (ca. 10 8 cm -2 ). (Auth.)

  1. Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

    Directory of Open Access Journals (Sweden)

    S.-T. Pham

    2018-02-01

    Full Text Available Magneto-electroluminescence (MEL effects are observed in single-layer organic light-emitting devices (OLEDs comprising only macrocyclic aromatic hydrocarbons (MAHs. The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6. The MEL ratio of the resulting OLED is 1%–2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (−1.5% to −2% in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

  2. A meta-analytic review of the effectiveness of single-layer clothing in preventing exposure from pesticide handling.

    Science.gov (United States)

    Miguelino, Eric S

    2014-01-01

    This review summarizes available information on the penetration of pesticides through single-layer clothing by pesticide handlers and introduces epidemiological and observational studies on pesticide exposure. The data for this report were taken from peer-reviewed articles, publicly available government reports, and publicly available government reviews of registrant-submitted data and information. The arithmetic mean of calculated clothing penetration was obtained for various parts of the body (upper arm, lower arm, chest/torso, back/torso, upper leg, and lower leg) that were exposed to pesticide. The range of pesticide penetration to the various parts of the body through single-layer clothing during mixing, loading, and application (MLA) activities was found to be 6.2% ± 5.7% to 21.4% ± 6.7%, which demonstrates a potential for increased and unintentional pesticide exposures. Based on this evaluation, some accepted default values for protection against pesticide exposure may be overestimated.

  3. Synchrotron Topographic and Diffractometer Studies of Buried Layered Structures Obtained by Implantation with Swift Heavy Ions in Silicon Single Crystals

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Wieteska, K.; Zymierska, D.; Graeff, W.; Czosnyka, T.; Choinski, J.

    2006-01-01

    A distribution of crystallographic defects and deformation in silicon crystals subjected to deep implantation (20-50 μm) with ions of the energy of a few MeV/amu is studied. Three different buried layered structures (single layer, binary buried structure and triple buried structure) were obtained by implantation of silicon single crystals with 184 MeV argon ions, 29.7 MeV boron ions, and 140 MeV argon ions, each implantation at a fluency of 1x10 14 ions cm -2 . The implanted samples were examined by means of white beam X-ray section and projection topography, monochromatic beam topography and by recording local rocking curves with the beam restricted to 50 x 50 μm 2 . The experiment pointed to a very low level of implantation-induced strain (below 10 -5 ). The white beam Bragg case section experiment revealed a layer producing district black contrast located at a depth of the expected mean ion range. The presence of these buried layered structures in studied silicon crystals strongly affected the fringe pattern caused by curvature of the samples. In case of white beam projection and monochromatic beam topographs the implanted areas were revealed as darker regions with a very tiny grain like structure. One may interpret these results as the effect of considerable heating causing annihilation of point defects and formation of dislocation loops connected with point defect clusters. (author)

  4. Pulling back error to the hidden-node parameter technology: Single-hidden-layer feedforward network without output weight

    OpenAIRE

    Yang, Yimin; Wu, Q. M. Jonathan; Huang, Guangbin; Wang, Yaonan

    2014-01-01

    According to conventional neural network theories, the feature of single-hidden-layer feedforward neural networks(SLFNs) resorts to parameters of the weighted connections and hidden nodes. SLFNs are universal approximators when at least the parameters of the networks including hidden-node parameter and output weight are exist. Unlike above neural network theories, this paper indicates that in order to let SLFNs work as universal approximators, one may simply calculate the hidden node paramete...

  5. Design of Circular, Square, Single, and Multi-layer Induction Coils for Electromagnetic Priming Using Inductance Estimates

    Science.gov (United States)

    Fritzsch, Robert; Kennedy, Mark W.; Aune, Ragnhild E.

    2018-02-01

    Special induction coils used for electro magnetic priming of ceramic foam filters in liquid metal filtration have been designed using a combination of analytical and finite element modeling. Relatively simple empirical equations published by Wheeler in 1928 and 1982 have been used during the design process. The equations were found to accurately predict the z-component of the magnetic flux densities of both single- and multi-layer coils as verified both experimentally and by using COMSOL® 5.1 multiphysics simulations.

  6. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with pradeodymium oxide dielectric layers

    Energy Technology Data Exchange (ETDEWEB)

    Sohal, R.

    2006-07-24

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO{sub 2}/SiC interface. Clean, graphite-free SiO{sub 2} has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr{sub 2}O{sub 3} on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr{sub 2}O{sub 3} and SiC, and simultaneously provide higher band offsets. (orig.)

  7. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers

    International Nuclear Information System (INIS)

    Sohal, R.

    2006-01-01

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO 2 /SiC interface. Clean, graphite-free SiO 2 has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr 2 O 3 on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr 2 O 3 and SiC, and simultaneously provide higher band offsets. (orig.)

  8. Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

    Energy Technology Data Exchange (ETDEWEB)

    Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.; Trapeznikova, I. N.; Bobyl, A. V.; Terukova, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.

  9. Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

    Science.gov (United States)

    Chang, P. K.; Hwu, J. G.

    2018-02-01

    Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

  10. Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.

    Science.gov (United States)

    Sun, Yiling; Gao, Pingqi; He, Jian; Zhou, Suqiong; Ying, Zhiqin; Yang, Xi; Xiang, Yong; Ye, Jichun

    2016-12-01

    Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PSS, rear-SiNx:H, front PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

  11. Numerical investigation of dielectric barrier discharges

    Science.gov (United States)

    Li, Jing

    1997-12-01

    A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in

  12. Fracture resistance of single-tooth implant-supported zirconia-based indirect composite-layered molar restorations.

    Science.gov (United States)

    Taguchi, Kohei; Komine, Futoshi; Fushiki, Ryosuke; Blatz, Markus B; Kamio, Shingo; Matsumura, Hideo

    2014-08-01

    This study evaluated the fracture resistance of single-tooth implant-supported zirconia-based indirect composite-layered molar restorations. Forty-four titanium abutments (GingiHue Post) were placed on dental implants (Osseotite Implant). Standardized single-tooth cement-retained implant-supported mandibular molar restorations were fabricated for each of four test groups (n = 11) as follows: porcelain-fused-to-metal crowns (PFM), zirconia-based all-ceramic crowns (ZAC), zirconia-based indirect composite-layered crowns primed with Estenia Opaque Primer for zirconia frameworks (ZIC-E), and zirconia-based indirect composite-layered crowns (ZIC). The crowns were luted with a glass-ionomer cement (Ketac Cem Easymix). Fracture resistance (N) was determined by force application of a perpendicular load to the crowns with a universal testing machine. One-way analysis of variance (ANOVA) and the Tukey's HSD test were used to assess differences in fracture resistance values (α = 0.05). Mean fracture resistances (SD) were 3.09 (0.22) kN, 3.11 (0.34) kN, 2.84 (0.21) kN, and 2.50 (0.36) kN for the PFM, ZAC, ZIC-E, and ZIC groups, respectively. Fracture resistance in the ZIC specimens was significantly lower (P zirconia-based indirect composite-layered molar crowns primed with Estenia Opaque Primer for zirconia frameworks (ZIC-E) is comparable to that of porcelain-fused-to-metal (PFM) and zirconia-based all-ceramic (ZAC) restorations. Application of Estenia Opaque Primer to zirconia ceramic framework provides superior fracture resistance in implant-supported zirconia-based indirect composite-layered molar crowns. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  13. Epitaxial layers of 2122 BCSCO superconductor thin films having single crystalline structure

    Science.gov (United States)

    Pandey, Raghvendra K. (Inventor); Raina, Kanwal K. (Inventor); Solayappan, Narayanan (Inventor)

    1995-01-01

    A substantially single phase, single crystalline, highly epitaxial film of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O.sub.8 superconductor which has a T.sub.c (zero resistance) of 83K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO.sub.3, into the molten solution at 850.degree. C., cooling the solution from 850.degree. C. to 830.degree. C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.

  14. Effect of Single or Combined Climatic and Hygienic Stress in Four Layer Lines: 1. Performance

    NARCIS (Netherlands)

    Star, L.; Kemp, B.; Anker, van den I.; Parmentier, H.K.

    2008-01-01

    Effects of long-term climatic stress (heat exposure), short-term hygienic stress [lipopolysaccharide (LPS)], or a combination of both challenges on performance of 4 layer lines were investigated. The lines were earlier characterized by natural humoral immune competence and survival rate. At 22 wk of

  15. Dielectric characterisation of soil

    NARCIS (Netherlands)

    Hilhorst, M.A.

    1998-01-01

    The potential of dielectric measuring techniques for soil characterisation has not been fully explored. This is attributed to the complex and incomplete theory on dielectrics, as well as to the lack of sensors suited for practical applications.

    The theory on dielectric properties of soils is

  16. Single-column model and large eddy simulation of the evening transition in the planetary boundary layer

    Science.gov (United States)

    Cuchiara, Gustavo; Rappenglück, Bernhard

    2016-04-01

    The transition from the convective boundary layer during the daytime to the stable stratified boundary layer during nighttime after sunset plays an important role in the transport and dispersion of atmospheric pollutants. However, our knowledge regarding this transition and its feedback on the structure of the subsequent nocturnal boundary layer is still restricted. This also prevents forecast models from accurate prediction of the onset and development of the nighttime boundary layer, which determines the redistribution of pollutants within the nocturnal surface layer and the residual layer aloft. In the present study, the well-known case of day 33 of the Wangara experiment is resimulated using the Weather Research and Forecasting (WRF) model in an idealized single-column mode to assess the performance of a frequently used planetary boundary layer (PBL) scheme, the Yonsei University (YSU) PBL scheme. These results are compared with two large eddy simulations (LES) for the same case study imposing different surface fluxes: one using previous surface fluxes calculated for the Wangara experiment and a second one using output from the WRF model. The results show a reasonable agreement of the PBL scheme in WRF with the LES. Overall, all the simulations presented a cold bias of ~3 Kelvin for the potential temperature and underestimation of the wind speed, especially after the transition to nighttime conditions (biases were up to 4 ms-1). Finally, an alternative set of eddy diffusivity equations was tested to represent the transition characteristics of a sunset period, with a stable layer below and a new parameterization for the convective decay regime typically observed in the RL aloft. This set of equations led to a gradual decrease of the eddy diffusivity, which replaces the instantaneous collapse of traditional diagnostics for eddy diffusivities. More appreciable changes were observed in air temperature, wind speed and specific humidity (up to 0.5 K, 0.6 ms-1, and 0

  17. The efficiency enhancement of single-layer solution-processed blue phosphorescent organic light emitting diodes by hole injection layer modification

    International Nuclear Information System (INIS)

    Yeoh, K H; Talik, N A; Whitcher, T J; Ng, C Y B; Woon, K L

    2014-01-01

    Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) PEDOT : PSS is extensively used as a hole injection layer (HIL) in solution-processed organic light emitting diodes (OLEDs). The high work function of a HIL is crucial in improving OLED efficiency. The work function of PEDOT : PSS is usually around 5.1–5.3 eV. By adding perfluorinated ionomer (PFI), the work function of PEDOT : PSS has been reported to reach as high as 5.95 eV. We investigated the effects of PFI-modified PEDOT : PSS in a single-layer solution-processed blue phosphorescent OLED (PHOLED). We observed that high concentrations of a PFI in PEDOT : PSS has detrimental effects on the device efficiency due to the low conductivity of the PFI. Using this approach, blue PHOLEDs with efficiencies of 9.4 lm W −1 (18.2 cd A −1 ) and 7.9 lm W −1 (20.4 cd A −1 ) at 100 cd m −2 and 1000 cd m −2 , respectively, were demonstrated. (paper)

  18. A single α-cobalt hydroxide/sodium alginate bilayer layer-by-layer assembly for conferring flame retardancy to flexible polyurethane foams

    Energy Technology Data Exchange (ETDEWEB)

    Mu, Xiaowei [State Key Laboratory of Fire Science, University of Science and Technology of China, Hefei 230026 (China); Yuan, Bihe [School of Resources and Environmental Engineering, Wuhan University of Technology, Wuhan 430070 (China); Pan, Ying; Feng, Xiaming; Duan, Lijin [State Key Laboratory of Fire Science, University of Science and Technology of China, Hefei 230026 (China); Zong, Ruowen, E-mail: zongrw@ustc.edu.cn [State Key Laboratory of Fire Science, University of Science and Technology of China, Hefei 230026 (China); Hu, Yuan, E-mail: yuanhu@ustc.edu.cn [State Key Laboratory of Fire Science, University of Science and Technology of China, Hefei 230026 (China); National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 (China)

    2017-04-15

    A layer-by-layer (LBL) assembly coating composed of α-cobalt hydroxide (α-Co(OH){sub 2}) and sodium alginate (SA) is deposited on flexible polyurethane (FPU) foam to reduce its flammability. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) are employed to prove the LBL assembly process. It is obvious from SEM results that a uniform and rough coating is deposited on FPU foam compared with that of untreated one. The peak intensity of methylene of SA in FITR spectra and typical (003) diffraction peak of α-Co(OH){sub 2} nanosheets at 11.0° in XRD patterns increases gradually with increment of bilayer number. Combustion behavior and toxicity suppression property of samples are characterized by cone calorimeter (under an irradiance of 35 kW m{sup −2}) and Thermogravimetry/Fourier transform infrared spectroscopy. The one and two bilayers (BL) coating on FPU foam can achieve excellent flame retardancy. Compared with untreated sample, the peak heat release rate of the coated FPU foam containing only one BL coating is reduced by 58.7%. The content of gaseous toxic substances during pyrolysis of FPU foam deposited with a single bilayer coating, such as CO and NCO-containing compounds, are reduced by 20.0% and 9.2%, respectively. Besides, the flame retardant mechanism of the coated FPU foam is also revealed. - Highlights: • The α-Co(OH){sub 2} nanosheets are firstly employed in LBL assembly. • A single α-cobalt hydroxide/sodium alginate bilayer LBL assembly for conferring excellent flame retardancy to FPU foam. • The flame retardant mechanism of LBL assembly FPU foam is displayed.

  19. Alkali (Li, K and Na) and alkali-earth (Be, Ca and Mg) adatoms on SiC single layer

    Science.gov (United States)

    Baierle, Rogério J.; Rupp, Caroline J.; Anversa, Jonas

    2018-03-01

    First-principles calculations within the density functional theory (DFT) have been addressed to study the energetic stability, and electronic properties of alkali and alkali-earth atoms adsorbed on a silicon carbide (SiC) single layer. We observe that all atoms are most stable (higher binding energy) on the top of a Si atom, which moves out of the plane (in the opposite direction to the adsorbed atom). Alkali atoms adsorbed give raise to two spin unpaired electronic levels inside the band gap leading the SiC single layer to exhibit n-type semiconductor properties. For alkaline atoms adsorbed there is a deep occupied spin paired electronic level inside the band gap. These finding suggest that the adsorption of alkaline and alkali-earth atoms on SiC layer is a powerful feature to functionalize two dimensional SiC structures, which can be used to produce new electronic, magnetic and optical devices as well for hydrogen and oxygen evolution reaction (HER and OER, respectively). Furthermore, we observe that the adsorption of H2 is ruled by dispersive forces (van der Waals interactions) while the O2 molecule is strongly adsorbed on the functionalized system.

  20. Study of Sequential Dexter Energy Transfer in High Efficient Phosphorescent White Organic Light-Emitting Diodes with Single Emissive Layer

    Science.gov (United States)

    Kim, Jin Wook; You, Seung Il; Kim, Nam Ho; Yoon, Ju-An; Cheah, Kok Wai; Zhu, Fu Rong; Kim, Woo Young

    2014-01-01

    In this study, we report our effort to realize high performance single emissive layer three color white phosphorescent organic light emitting diodes (PHOLEDs) through sequential Dexter energy transfer of blue, green and red dopants. The PHOLEDs had a structure of; ITO(1500 Å)/NPB(700 Å)/mCP:Firpic-x%:Ir(ppy)3-0.5%:Ir(piq)3-y%(300 Å)/TPBi(300 Å)/Liq(20 Å)/Al(1200 Å). The dopant concentrations of FIrpic, Ir(ppy)3 and Ir(piq)3 were adjusted and optimized to facilitate the preferred energy transfer processes attaining both the best luminous efficiency and CIE color coordinates. The presence of a deep trapping center for charge carriers in the emissive layer was confirmed by the observed red shift in electroluminescent spectra. White PHOLEDs, with phosphorescent dopant concentrations of FIrpic-8.0%:Ir(ppy)3-0.5%:Ir(piq)3-0.5% in the mCP host of the single emissive layer, had a maximum luminescence of 37,810 cd/m2 at 11 V and a luminous efficiency of 48.10 cd/A at 5 V with CIE color coordinates of (0.35, 0.41). PMID:25388087

  1. Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device.

    Science.gov (United States)

    Khan, Muhammad Atif; Rathi, Servin; Park, Jinwoo; Lim, Dongsuk; Lee, Yoontae; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

    2017-08-16

    The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS 2 ) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS 2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 10 3 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS 2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.

  2. Assessment of mixed-layer height estimation from single-wavelength ceilometer profiles

    Science.gov (United States)

    Knepp, Travis N.; Szykman, James J.; Long, Russell; Duvall, Rachelle M.; Krug, Jonathan; Beaver, Melinda; Cavender, Kevin; Kronmiller, Keith; Wheeler, Michael; Delgado, Ruben; Hoff, Raymond; Berkoff, Timothy; Olson, Erik; Clark, Richard; Wolfe, Daniel; Van Gilst, David; Neil, Doreen

    2017-10-01

    Differing boundary/mixed-layer height measurement methods were assessed in moderately polluted and clean environments, with a focus on the Vaisala CL51 ceilometer. This intercomparison was performed as part of ongoing measurements at the Chemistry And Physics of the Atmospheric Boundary Layer Experiment (CAPABLE) site in Hampton, Virginia and during the 2014 Deriving Information on Surface Conditions from Column and Vertically Resolved Observations Relevant to Air Quality (DISCOVER-AQ) field campaign that took place in and around Denver, Colorado. We analyzed CL51 data that were collected via two different methods (BLView software, which applied correction factors, and simple terminal emulation logging) to determine the impact of data collection methodology. Further, we evaluated the STRucture of the ATmosphere (STRAT) algorithm as an open-source alternative to BLView (note that the current work presents an evaluation of the BLView and STRAT algorithms and does not intend to act as a validation of either). Filtering criteria were defined according to the change in mixed-layer height (MLH) distributions for each instrument and algorithm and were applied throughout the analysis to remove high-frequency fluctuations from the MLH retrievals. Of primary interest was determining how the different data-collection methodologies and algorithms compare to each other and to radiosonde-derived boundary-layer heights when deployed as part of a larger instrument network. We determined that data-collection methodology is not as important as the processing algorithm and that much of the algorithm differences might be driven by impacts of local meteorology and precipitation events that pose algorithm difficulties. The results of this study show that a common processing algorithm is necessary for light detection and ranging (lidar)-based MLH intercomparisons and ceilometer-network operation, and that sonde-derived boundary layer heights are higher (10-15 % at midday) than lidar

  3. Assessment of mixed-layer height estimation from single-wavelength ceilometer profiles

    Directory of Open Access Journals (Sweden)

    T. N. Knepp

    2017-10-01

    Full Text Available Differing boundary/mixed-layer height measurement methods were assessed in moderately polluted and clean environments, with a focus on the Vaisala CL51 ceilometer. This intercomparison was performed as part of ongoing measurements at the Chemistry And Physics of the Atmospheric Boundary Layer Experiment (CAPABLE site in Hampton, Virginia and during the 2014 Deriving Information on Surface Conditions from Column and Vertically Resolved Observations Relevant to Air Quality (DISCOVER-AQ field campaign that took place in and around Denver, Colorado. We analyzed CL51 data that were collected via two different methods (BLView software, which applied correction factors, and simple terminal emulation logging to determine the impact of data collection methodology. Further, we evaluated the STRucture of the ATmosphere (STRAT algorithm as an open-source alternative to BLView (note that the current work presents an evaluation of the BLView and STRAT algorithms and does not intend to act as a validation of either. Filtering criteria were defined according to the change in mixed-layer height (MLH distributions for each instrument and algorithm and were applied throughout the analysis to remove high-frequency fluctuations from the MLH retrievals. Of primary interest was determining how the different data-collection methodologies and algorithms compare to each other and to radiosonde-derived boundary-layer heights when deployed as part of a larger instrument network. We determined that data-collection methodology is not as important as the processing algorithm and that much of the algorithm differences might be driven by impacts of local meteorology and precipitation events that pose algorithm difficulties. The results of this study show that a common processing algorithm is necessary for light detection and ranging (lidar-based MLH intercomparisons and ceilometer-network operation, and that sonde-derived boundary layer heights are higher (10–15 % at

  4. High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices

    Science.gov (United States)

    Chiu, Yu Sheng; Liao, Jen Ting; Lin, Yueh Chin; Chien Liu, Shin; Lin, Tai Ming; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-05-01

    High-κ cerium oxide (CeO2) was applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a gate insulator and a passivation layer by molecular beam deposition (MBD) for high-power applications. From capacitance-voltage (C-V) measurement results, the dielectric constant of the CeO2 film was 25.2. The C-V curves showed clear accumulation and depletion behaviors with a small hysteresis (20 mV). Moreover, the interface trap density (D it) was calculated to be 5.5 × 1011 eV-1 cm-2 at 150 °C. A CeO2 MOS-HEMT was fabricated and demonstrated a low subthreshold swing (SS) of 87 mV/decade, a high ON/OFF drain current ratio (I ON/I OFF) of 1.14 × 109, and a low gate leakage current density (J leakage) of 2.85 × 10-9 A cm-2 with an improved dynamic ON-resistance (R ON), which is about one order of magnitude lower than that of a conventional HEMT.

  5. Epitaxial growth and dielectric properties of Bi sub 2 VO sub 5 sub . sub 5 thin films on TiN/Si substrates with SrTiO sub 3 buffer layers

    CERN Document Server

    Lee, H Y; Choi, B C; Jeong, J H; Joseph, M; Tabata, H; Kawai, T

    2000-01-01

    Bi sub 2 VO sub 5 sub . sub 5 (BVO) thin films were epitaxially grown on SrTiO sub 3 /TiN/Si substrates by using pulsed laser ablation. A TiN thin film was prepared at 700 .deg. C as a bottom electrode. The TiN film exhibited a high alpha axis orientation and a very smooth morphology. Before the preparation of the BVO thin film, a crystallized SrTiO sub 3 thin film was deposited as a buffer layer on TiN/Si. The BVO thin film grown at a substrate temperature at 700 .deg. C and an oxygen pressure of 50 mTorr was found to be epitaxial along the c-axis. Also, BVO films were observed to have flat surfaces and the step-flow modes. The dielectric constant of the BVO film on STO/TiN/Si was constant at about 8 approx 4 in the applied frequency range between 10 sup 2 and 10 sup 6 Hz.

  6. Synthesis of Freestanding Single-crystal Perovskite Films and Heterostructures by Etching of Sacrificial Water-soluble Layers

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Di; Baek, David J.; Hong, Seung Sae; Kourkoutis, Lena F.; Hikita, Yasuyuki; Hwang, Harold Y.

    2016-08-22

    The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality and emergent phenomena, as seen in perovskite heterostructures. However, separation of these layers from the growth substrate has proven challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr3Al2O6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr3Al2O6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds.

  7. Control of a White Organic Light Emitting Diode emission parameters using a single doped RGB active layer

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, D. [Departamento de Ciência dos Materiais e i3N – Instituto de Nanoestruturas, Nanomodelação e Nanofabricação, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, Campus da Caparica, 2829-516 Caparica (Portugal); Pinto, A.; Califórnia, A.; Gomes, J. [CeNTI – Centro de Nanotecnologia, Materiais Técnicos, Funcionais e Inteligentes, Rua Fernando Mesquita 2785, 4760-034 Vila Nova de Famalicão (Portugal); Pereira, L., E-mail: luiz@ua.pt [Departmento de Física e i3N – Instituto de Nanoestruturas, Nanomodelação e Nanofabricação, Universidade de Aveiro, 3810-193 Aveiro (Portugal)

    2016-09-15

    Highlights: • A simple WOLED for Solid State Lighting is proposed with high color stability. • Energy transfer and electroluminescence dynamics of a single RGB layer for WOLEDs. • White shade modulation and stability over large emitting areas and applied voltages. - Abstract: Solid State Lighting technologies based on Organic Light Emitting Diodes, became an interesting focus due to their unique properties. The use of a unique RGB active layer for white emission, although simple in theory, shows difficulty to stabilize both CIE coordinates and color modulation. In this work, a WOLED using a simple RGB layer, was developed achieving a high color stability and shade modulation. The RGB matrix comprises a blue host material NPB, doped with two guests, a green (Coumarin 153) and a red (DCM1) in low concentrations. The RGB layer carrier dynamics allows for the white emission in low device complexity and high stability. This was also shown independent of the white shade, obtained through small changes in the red dopant resulting in devices ranging from warm to cool white i.e. an easy color tuning. A detailed analysis of the opto-electrical behavior is made.

  8. Timing and Distribution of Single-Layered Ejecta Craters Imply Sporadic Preservation of Tropical Subsurface Ice on Mars

    Science.gov (United States)

    Kirchoff, Michelle R.; Grimm, Robert E.

    2018-01-01

    Determining the evolution of tropical subsurface ice is a key component to understanding Mars's climate and geologic history. Study of an intriguing crater type on Mars—layered ejecta craters, which likely form by tapping subsurface ice—may provide constraints on this evolution. Layered ejecta craters have a continuous ejecta deposit with a fluidized-flow appearance. Single-layered ejecta (SLE) craters are the most common and dominate at tropical latitudes and therefore offer the best opportunity to derive new constraints on the temporal evolution of low-latitude subsurface ice. We estimate model formation ages of 54 SLE craters with diameter (D) ≥ 5 km using the density of small, superposed craters with D D 1 km indicates that ice could be preserved as shallow as 100 m or less at those locations. Finally, there is a striking spatial mixing in an area of highlands near the equator of layered and radial (lunar-like ballistic) ejecta craters; the latter form where there are insufficient concentrations of subsurface ice. This implies strong spatial heterogeneity in the concentration of tropical subsurface ice.

  9. Control of a White Organic Light Emitting Diode emission parameters using a single doped RGB active layer

    International Nuclear Information System (INIS)

    Pereira, D.; Pinto, A.; Califórnia, A.; Gomes, J.; Pereira, L.

    2016-01-01

    Highlights: • A simple WOLED for Solid State Lighting is proposed with high color stability. • Energy transfer and electroluminescence dynamics of a single RGB layer for WOLEDs. • White shade modulation and stability over large emitting areas and applied voltages. - Abstract: Solid State Lighting technologies based on Organic Light Emitting Diodes, became an interesting focus due to their unique properties. The use of a unique RGB active layer for white emission, although simple in theory, shows difficulty to stabilize both CIE coordinates and color modulation. In this work, a WOLED using a simple RGB layer, was developed achieving a high color stability and shade modulation. The RGB matrix comprises a blue host material NPB, doped with two guests, a green (Coumarin 153) and a red (DCM1) in low concentrations. The RGB layer carrier dynamics allows for the white emission in low device complexity and high stability. This was also shown independent of the white shade, obtained through small changes in the red dopant resulting in devices ranging from warm to cool white i.e. an easy color tuning. A detailed analysis of the opto-electrical behavior is made.

  10. Infrared and THz spectroscopy of nanostructured dielectrics

    Directory of Open Access Journals (Sweden)

    Jan Petzelt

    2009-09-01

    Full Text Available Results achieved using the infrared/THz spectroscopy of various inhomogeneous dielectrics in the Department of Dielectrics, Institute of Physics, Prague, during the last decade are briefly reviewed. The discussion concerns high-permittivity ceramics with inevitable low-permittivity dead layers along the grain boundaries, relaxor ferroelectrics with highly anisotropic polar nano-regions, classical matrix-type composites, core-shell composites, filled nanoporous glasses, polycrystalline and epitaxial thin films, heterostructures and superlattices on dielectric substrates. The analysis using models based on the effective medium approach is discussed. The importance of depolarizing field and of the percolation of components on the effective ac dielectric response and the excitations contributing to it are emphasized.

  11. Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.

    Science.gov (United States)

    Lin, Yu-Chuan; Chang, Chih-Yuan S; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J; Robinson, Jeremy T; Wallace, Robert M; Mayer, Theresa S; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A

    2014-12-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF).

  12. Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

    KAUST Repository

    Lin, Yu-Chuan

    2014-11-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green\\'s function (NEGF).

  13. Effect of UV-light illumination on oxide-based electric-double-layer thin-film transistors

    Science.gov (United States)

    Zhou, Jumei; Hu, Yunping

    2017-01-01

    Indium-tin-oxide (ITO)-based thin-film transistors (TFTs) were fabricated using porous SiO2 deposited by plasma-enhanced chemical vapor deposition and Al2O3 deposited by atomic layer deposition as dielectrics. The results showed that the porous SiO2 film exhibited a high electric-double-layer (EDL) capacitance. Devices gated by the EDL dielectric exhibited a high drain current on/off ratio of >106 and a low operation voltage of <2.0 V in the dark. When illuminated by 254 nm UV light, ITO-based EDL TFTs gated by a single SiO2 dielectric displayed weak photo-responses. However, devices gated by a stacked Al2O3/EDL dielectric displayed a high photo responsivity of more than 104 with a gate bias of -0.5 V (depletion state).

  14. Slow-muon study of quaternary solar-cell materials: Single layers and p -n junctions

    Science.gov (United States)

    Alberto, H. V.; Vilão, R. C.; Vieira, R. B. L.; Gil, J. M.; Weidinger, A.; Sousa, M. G.; Teixeira, J. P.; da Cunha, A. F.; Leitão, J. P.; Salomé, P. M. P.; Fernandes, P. A.; Törndahl, T.; Prokscha, T.; Suter, A.; Salman, Z.

    2018-02-01

    Thin films and p -n junctions for solar cells based on the absorber materials Cu (In ,G a ) Se2 and Cu2ZnSnS4 were investigated as a function of depth using implanted low energy muons. The most significant result is a clear decrease of the formation probability of the Mu+ state at the heterojunction interface as well as at the surface of the Cu (In ,G a ) Se2 film. This reduction is attributed to a reduced bonding reaction of the muon in the absorber defect layer at its surface. In addition, the activation energies for the conversion from a muon in an atomiclike configuration to a anion-bound position are determined from temperature-dependence measurements. It is concluded that the muon probe provides a measurement of the effective surface defect layer width, both at the heterojunctions and at the films. The CIGS surface defect layer is crucial for solar-cell electrical performance and additional information can be used for further optimizations of the surface.

  15. Dielectrics in electric fields

    CERN Document Server

    Raju, Gorur G

    2003-01-01

    Discover nontraditional applications of dielectric studies in this exceptionally crafted field reference or text for seniors and graduate students in power engineering tracks. This text contains more than 800 display equations and discusses polarization phenomena in dielectrics, the complex dielectric constant in an alternating electric field, dielectric relaxation and interfacial polarization, the measurement of absorption and desorption currents in time domains, and high field conduction phenomena. Dielectrics in Electric Fields is an interdisciplinary reference and text for professionals and students in electrical and electronics, chemical, biochemical, and environmental engineering; physical, surface, and colloid chemistry; materials science; and chemical physics.

  16. Investigation of SR method grown <0 0 1> directed KDP single crystal and its characterization by high-resolution X-ray diffractometry (HRXRD), laser damage threshold, dielectric, thermal analysis, optical and hardness studies

    Energy Technology Data Exchange (ETDEWEB)

    Balamurugan, S. [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam, Chennai 603 110 (India); Ramasamy, P., E-mail: ramasamyp@ssn.edu.in [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam, Chennai 603 110 (India); Sharma, S.K. [LMDDD, RRCAT, Indore (India); Inkong, Yutthapong; Manyum, Prapun [School of Physics, Institute of Science, Suranaree University of Technology (Thailand)

    2009-10-15

    <0 0 1> directed potassium dihydrogen orthophosphate (KDP) single crystal was grown by Sankaranarayanan-Ramasamy (SR) method. The <0 0 1> oriented seed crystals were mounted at the bottom of the platform and the size of the crystals were 10 mm diameter, 110 mm height. Two different growths were tried, in one the crystal diameter was the ampoule's inner diameter and in the other the crystal thickness was less than the ampoule diameter. In the first case only the top four pyramidal faces were existing whereas in the second case the top four pyramidal faces and four prismatic faces were existing through out the growth. The crystals were grown using same stoichiometric solution. The results of the two growths are discussed in this paper. The grown crystals were characterized by high-resolution X-ray diffractometry (HRXRD), laser damage threshold, dielectric, thermal analysis, UV-vis spectroscopy and microhardness studies. The HRXRD analysis indicates that the crystalline perfection is excellent without having any very low angle internal structural grain boundaries. Laser damage threshold value has been determined using Nd:glass laser operating at 1054 nm. The damage threshold for the KDP crystal is greater than 4.55 GW cm{sup -2}. The dielectric constant was higher and the dielectric loss was less in SR method grown crystal as against conventional method grown crystal. In thermal analysis, the starting of decomposition nature is similar in SR method grown KDP crystal and conventional method grown crystal. The SR method grown KDP has higher transmittance and higher hardness value compared to conventional method grown crystals.

  17. Simultaneous shunt protection and back contact formation for CdTe solar cells with single wall carbon nanotube layers

    Science.gov (United States)

    Phillips, Adam B.; Khanal, Rajendra R.; Song, Zhaoning; Watthage, Suneth C.; Kormanyos, Kenneth R.; Heben, Michael J.

    2015-12-01

    Thin film photovoltaic (PV) devices and modules prepared by commercial processes can be severely compromised by through-device low resistance electrical pathways. The defects can be due to thin or missing semiconductor material, metal diffusion along grain boundaries, or areas containing diodes with low turn-on potentials. We report the use of single wall carbon nanotube (SWCNT) layers to enable both protection against these defects and back contact formation for CdTe PV devices. Samples prepared with a SWCNT back contact exhibited good efficiency and did not require shunt protection, while devices prepared without shunt protection using a standard metal back contact performed poorly. We describe the mechanism by which the SWCNT layer functions. In addition to avoiding the need for shunt protection by other means, the SWCNT film also provides a route to higher short circuit currents.

  18. Lattices of dielectric resonators

    CERN Document Server

    Trubin, Alexander

    2016-01-01

    This book provides the analytical theory of complex systems composed of a large number of high-Q dielectric resonators. Spherical and cylindrical dielectric resonators with inferior and also whispering gallery oscillations allocated in various lattices are considered. A new approach to S-matrix parameter calculations based on perturbation theory of Maxwell equations, developed for a number of high-Q dielectric bodies, is introduced. All physical relationships are obtained in analytical form and are suitable for further computations. Essential attention is given to a new unified formalism of the description of scattering processes. The general scattering task for coupled eigen oscillations of the whole system of dielectric resonators is described. The equations for the  expansion coefficients are explained in an applicable way. The temporal Green functions for the dielectric resonator are presented. The scattering process of short pulses in dielectric filter structures, dielectric antennas  and lattices of d...

  19. [Observation of single-layered inverted internal limiting membrane flap technique for macular hole with retinal detachment in high myopia].

    Science.gov (United States)

    Xu, C Z; Wu, J H; He, J W; Feng, C

    2017-05-11

    Objective: To compare the outcome of pars plana vitrectomy (PPV) with a single-layered inverted internal limiting membrane (ILM) flap versus PPV with ILM peeling for the treatment of macular hole associated retinal detachment (MHRD) in high myopia. Methods: In a retrospective cohort study, PPV with 2 kinds of adjuvant surgical procedures were used in 35 moderately high myopia eyes with MHRD. These eyes were divided into 2 groups: group 1 (17 eyes) receiving PPV and ILM peeling and group 2 (18 eyes) receiving PPV with a single-layered inverted ILM flap. Anatomical reattachment of the retina, macular hole closure, and best-corrected visual acuity (BCVA) were measured at 6 months after surgery. Results: The retina was successfully reattached in all cases. The difference of the retinal reattachment rate between the two groups was not statistically significant (Fisher's exact test, P= 1.000). The rate of macular hole closure was 47.1% in group 1 (8 eyes) and 88.9% in group 2 (16 eyes). The difference of the macular hole closure rate between the two groups was statistically significant (Fisher's exact test, P= 0.012). Significant improvement in logarithm of minimal angle of resolution (logMAR) BCVA was achieved in both groups. There was no difference in the initial, final, or improved logMAR BCVA in the 2 groups. Conclusion: Single-layered inverted ILM flap technique effectively helps close the macular hole in moderately high myopia with MHRD. This may prevent the possible redetachment from the macular hole. (Chin J Ophthalmol, 2017, 53: 338 - 343) .

  20. The Electronic and Optical Properties of Au Doped Single-Layer Phosphorene

    Science.gov (United States)

    Zhu, Ziqing; Chen, Changpeng; Liu, Jiayi; Han, Lu

    2018-01-01

    The electronic properties and optical properties of single and double Au-doped phosphorene have been comparatively investigated using the first-principles plane-wave pseudopotential method based on density functional theory. The decrease from direct band gap 0.78 eV to indirect band gap 0.22 and 0.11 eV are observed in the single and double Au-doped phosphorene, respectively. The red shifts of absorbing edge occur in both doped systems, which consequently enhance the absorbing of infrared light in phosphorene. Band gap engineering can, therefore, be used to directly tune the optical absorption of phosphorene system by substitutional Au doping.

  1. Effects of a saturated layer and recirculation on nitrogen treatment performances of a single stage Vertical Flow Constructed Wetland (VFCW).

    Science.gov (United States)

    Prigent, S; Paing, J; Andres, Y; Chazarenc, F

    2013-01-01

    Upgrades to enhance nitrogen removal were tested in a 2 year old pilot vertical flow constructed wetland in spring and summer periods. The effects of a saturated layer and of recirculation were tested in particular. Two pilots (L = 2 m, W = 1.25 m, H = 1.2 m), filled with expanded schist (Mayennite(®)), were designed with hydraulic saturated layers of 20 and 40 cm at the bottom. Each pilot was fed with raw domestic wastewater under field conditions according to a hydraulic load of 15-38 cm d(-1) (i.e. 158-401 g COD (chemical oxygen demand) m(-2) d(-1)) and to recirculation rates ranging from 0% up to 150%. The initial load during the first 2 years of operation resulted in an incomplete mineralized accumulated sludge leading to total suspended solids (TSS), COD and biochemical oxygen demand (BOD5) release. A 40 cm hydraulic saturated layer enabled an increase of 5-10% total nitrogen (TN) removal compared to a 20 cm saturated layer. Recirculation allowed the dilution of raw wastewater and enhanced nitrification in a single stage. A design of 1.8 m² pe(-1) (48 cm d(-1), 191 g COD m(-2) d(-1)) with a 40 cm saturated layer and 100% recirculation enabled the French standard D4 (35 mg TSS L(-1), 125 mg COD L(-1), 25 mg BOD5 L(-1)), nitrogen concentrations below 20 mg TKN (total Kjeldahl nitrogen) L(-1) and 50 mg TN L(-1), to be met.

  2. Use of Single-Layer g-C3N4/Ag Hybrids for Surface-Enhanced Raman Scattering (SERS)

    OpenAIRE

    Jiang, Jizhou; Zou, Jing; Wee, Andrew Thye Shen; Zhang, Wenjing

    2016-01-01

    Surface-enhanced Raman scattering (SERS) substrates with high activity and stability are desirable for SERS sensing. Here, we report a new single atomic layer graphitic-C3N4 (S-g-C3N4) and Ag nanoparticles (NPs) hybrid as high-performance SERS substrates. The SERS mechanism of the highly stable S-g-C3N4/Ag substrates was systematically investigated by a combination of experiments and theoretical calculations. From the results of XPS and Raman spectroscopies, it was found that there was a stro...

  3. Effect of ethanethiolate spacer on morphology and optical responses of Ag nanoparticle array-single layer graphene hybrid systems

    Czech Academy of Sciences Publication Activity Database

    Sutrová, Veronika; Šloufová, I.; Melníková Komínková, Zuzana; Kalbáč, Martin; Pavlova, Ewa; Vlčková, B.

    2017-01-01

    Roč. 33, č. 50 (2017), s. 14414-14424 ISSN 0743-7463 R&D Projects: GA ČR(CZ) GA15-01953S; GA MŠk(CZ) LM2015073 Grant - others:GA MŠk(CZ) CZ.02.1.01/0.0/0.0/16_013/0001821 Institutional support: RVO:61389013 ; RVO:61388955 Keywords : Ag nanoparticle * single layer graphene * ethanethiol Subject RIV: JI - Composite Materials; CF - Physical ; Theoretical Chemistry (UFCH-W) OBOR OECD: Composites (including laminates, reinforced plastics, cermets, combined natural and synthetic fibre fabrics; Physical chemistry (UFCH-W) Impact factor: 3.833, year: 2016

  4. Model for a collimated spin-wave beam generated by a single-layer spin torque nanocontact

    Science.gov (United States)

    Hoefer, M. A.; Silva, T. J.; Stiles, M. D.

    2008-04-01

    A model of spin-torque-induced magnetization dynamics based on semiclassical spin diffusion theory for a single-layer nanocontact is presented. The model incorporates effects due to the current-induced Oersted field and predicts the generation of a variety of spatially dependent, coherent, precessional magnetic wave structures. Directionally controllable collimated spin-wave beams, vortex spiral waves, and localized standing waves are found to be excited by the interplay of the Oersted field and the orientation of an applied field. These fields act as a spin-wave “corral” around the nanocontact that controls the propagation of spin waves in certain directions.

  5. Anisotropic Young's Modulus for Single-Layer Black Phosphorus: The Third Principle Direction Besides Armchair and Zigzag

    OpenAIRE

    Jiang, Jin-Wu

    2015-01-01

    We derive an analytic formula for the Young's modulus in single-layer black phosphorus using the valence force field model. By analyzing the directional dependence for the Young's modulus, we explore the third principle direction with direction angle phi_tp = 0.268pi besides armchair and zigzag directions. The maximum Young's modulus value is in the third principle direction. More specifically, the Young's modulus is 52.2 N/m, 85.4 N/m, and 111.4 N/m in the armchair direction, zigzag directio...

  6. Defect characterization of Ga4Se3S layered single crystals by ...

    Indian Academy of Sciences (India)

    Experimental details. Ga4Se3S polycrystals were synthesized from high-purity elements prepared in stoi- chiometric proportions.Gallium (Aldrich cat. no. 263273), selenium (Aldrich cat.no. 204307) and sulphur (Fluka cat. no. 84680) were of 99.999% purity. Ga4Se3S single crystals were grown by Bridgman method from the ...

  7. Defect characterization of Ga4Se3S layered single crystals by ...

    Indian Academy of Sciences (India)

    Trapping centres in undoped Ga 4 Se 3 S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low temperature range of 15−300 K. After illuminating the sample with blue light (∼470 nm) at 15 K, TL glow curve exhibited one peak ...

  8. Stress measurements of planar dielectric elastomer actuators

    International Nuclear Information System (INIS)

    Osmani, Bekim; Aeby, Elise A.; Müller, Bert

    2016-01-01

    Dielectric elastomer actuator (DEA) micro- and nano-structures are referred to artificial muscles because of their specific continuous power and adequate time response. The bending measurement of an asymmetric, planar DEA is described. The asymmetric cantilevers consist of 1 or 5 μm-thin DEAs deposited on polyethylene naphthalate (PEN) substrates 16, 25, 38, or 50 μm thick. The application of a voltage to the DEA electrodes generates an electrostatic pressure in the sandwiched silicone elastomer layer, which causes the underlying PEN substrate to bend. Optical beam deflection enables the detection of the bending angle vs. applied voltage. Bending radii as large as 850 m were reproducibly detected. DEA tests with electric fields of up to 80 V/μm showed limitations in electrode’s conductivity and structure failures. The actuation measurement is essential for the quantitative characterization of nanometer-thin, low-voltage, single- and multi-layer DEAs, as foreseen for artificial sphincters to efficiently treat severe urinary and fecal incontinence.

  9. Stress measurements of planar dielectric elastomer actuators

    Energy Technology Data Exchange (ETDEWEB)

    Osmani, Bekim; Aeby, Elise A.; Müller, Bert [Biomaterials Science Center, University of Basel, Gewerbestrasse 14, 4123 Allschwil (Switzerland)

    2016-05-15

    Dielectric elastomer actuator (DEA) micro- and nano-structures are referred to artificial muscles because of their specific continuous power and adequate time response. The bending measurement of an asymmetric, planar DEA is described. The asymmetric cantilevers consist of 1 or 5 μm-thin DEAs deposited on polyethylene naphthalate (PEN) substrates 16, 25, 38, or 50 μm thick. The application of a voltage to the DEA electrodes generates an electrostatic pressure in the sandwiched silicone elastomer layer, which causes the underlying PEN substrate to bend. Optical beam deflection enables the detection of the bending angle vs. applied voltage. Bending radii as large as 850 m were reproducibly detected. DEA tests with electric fields of up to 80 V/μm showed limitations in electrode’s conductivity and structure failures. The actuation measurement is essential for the quantitative characterization of nanometer-thin, low-voltage, single- and multi-layer DEAs, as foreseen for artificial sphincters to efficiently treat severe urinary and fecal incontinence.

  10. Radiative effect differences between multi-layered and single-layer clouds derived from CERES, CALIPSO, and CloudSat data

    International Nuclear Information System (INIS)

    Li Jiming; Yi Yuhong; Minnis, Patrick; Huang Jianping; Yan Hongru; Ma Yuejie; Wang Wencai; Kirk Ayers, J.

    2011-01-01

    Clouds alter general circulation through modification of the radiative heating profile within the atmosphere. Their effects are complex and depend on height, vertical structure, and phase. The instantaneous cloud radiative effect (CRE) induced by multi-layered (ML) and single-layer (SL) clouds is estimated by analyzing data collected by the Cloud-Aerosol Lidar and Infrared Pathfinder Satellite Observation (CALIPSO), CloudSat, and Clouds and Earth's Radiation Energy Budget System (CERES) missions from March 2007 through February 2008. The CRE differences between ML and SL clouds at the top of the atmosphere (TOA) and at the surface were also examined. The zonal mean shortwave (SW) CRE differences between the ML and SL clouds at the TOA and surface were positive at most latitudes, peaking at 120 W m -2 in the tropics and dropping to -30 W m -2 at higher latitudes. This indicated that the ML clouds usually reflected less sunlight at the TOA and transmitted more to the surface than the SL clouds, due to their higher cloud top heights. The zonal mean longwave (LW) CRE differences between ML and SL clouds at the TOA and surface were relatively small, ranging from -30 to 30 W m -2 . This showed that the ML clouds only increased the amount of thermal radiation at the TOA relative to the SL clouds in the tropics, decreasing it elsewhere. In other words, ML clouds tended to cool the atmosphere in the tropics and warm it elsewhere when compared to SL clouds. The zonal mean net CRE differences were positive at most latitudes and dominated by the SW CRE differences.

  11. Dielectric properties of nanocrystalline Co-Mg ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Jyoti, E-mail: jyotijoshi.phy2008@gmail.com [Department of Physics, University of Rajasthan, Jaipur (India); Sharma, Neha [Department of Physics, VEC Lakhanpur, Sarguja University, Ambikapur (C.G.) (India); Parashar, Jyoti; Saxena, V.K.; Bhatnagar, D. [Department of Physics, University of Rajasthan, Jaipur (India); Sharma, K.B. [Department of Physics, S. S. Jain Subodh P. G. College, Jaipur (India)

    2015-11-15

    Nanocrystalline powder samples with chemical formula Co{sub x}Mg{sub 1−x}Fe{sub 2}O{sub 4} (x = 0, 0.2, 0.4, 0.6, 0.8 and 1.0) have been synthesized by sol–gel auto combustion method using citric acid as fuel agent. The rietveld refinement study of x-ray diffraction patterns confirmed the spinel single phase formation for all samples. Dielectric constant (ε′), dielectric loss tangent (tan δ) and AC conductivity of Co{sub x}Mg{sub 1−x}Fe{sub 2}O{sub 4} ferrite nanoparticles have been measured at room temperature in the frequency range from 1000 Hz to 120 MHz. The dielectric dispersion observed at lower frequency region is attributed to Maxwell–Wagner two layer model, which is in agreement with Koops phenomenological theory. The observed results have been explained by polarization which is attributed to the electron exchange between Fe{sup 2+} and Fe{sup 3+} ions. The temperature variation of ε′ and tanδ for some particular frequencies were studied. The rapid increase in ε′ and tan δ has been explained using thermally activated electron exchange between Fe{sup 2+} ↔ Fe{sup 3+} and Co{sup 2+} ↔ Co{sup 3+} ions at adjacent octahedral sites. The role of interfacial polarization has been focused to explain the high dispersion in ε′ and tanδ with temperature observed at low frequencies. - Graphical abstract: (a) TEM image of Co{sub 0.4}Mg{sub 0.6}Fe{sub 2}O{sub 4} shows the nano size of the synthesized ferrite particles and (b) Dielectric constant behavior with frequency of Co{sub x}Mg{sub 1−x}Fe{sub 2}O{sub 4} ferrite.

  12. Radiation Characteristics Enhancement of Dielectric Resonator Antenna Using Solid/Discrete Dielectric Lenses

    Directory of Open Access Journals (Sweden)

    H. A. E. Malhat

    2015-02-01

    Full Text Available The radiation characteristics of the dielectric resonator antennas (DRA is enhanced using different types of solid and discrete dielectric lenses. One of these approaches is by loading the DRA with planar superstrate, spherical lens, or by discrete lens (transmitarray. The dimensions and dielectric constant of each lens are optimized to maximize the gain of the DRA. A comparison between the radiations characteristics of the DRA loaded with different lenses are introduced. The design of the dielectric transmitarray depends on optimizing the heights of the dielectric material of the unit cell. The optimized transmitarray achieves 7 dBi extra gain over the single DRA with preserving the circular polarization. The proposed antenna is suitable for various applications that need high gain and focused antenna beam.

  13. High Reflectance Silicon Dielectric Mirrors for Infrared Astronomy

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal is to mature our fabrication technology to enable broadband, low loss multi-layer dielectric coatings for the mid- to far- IR wavelength range to enhance...

  14. Single-unit-cell layer established Bi 2 WO 6 3D hierarchical architectures: Efficient adsorption, photocatalysis and dye-sensitized photoelectrochemical performance

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Hongwei; Cao, Ranran; Yu, Shixin; Xu, Kang; Hao, Weichang; Wang, Yonggang; Dong, Fan; Zhang, Tierui; Zhang, Yihe

    2017-12-01

    Single-layer catalysis sparks huge interests and gains widespread attention owing to its high activity. Simultaneously, three-dimensional (3D) hierarchical structure can afford large surface area and abundant reactive sites, contributing to high efficiency. Herein, we report an absorbing single-unit-cell layer established Bi2WO6 3D hierarchical architecture fabricated by a sodium dodecyl benzene sulfonate (SDBS)-assisted assembled strategy. The DBS- long chains can adsorb on the (Bi2O2)2+ layers and hence impede stacking of the layers, resulting in the single-unit-cell layer. We also uncovered that SDS with a shorter chain is less effective than SDBS. Due to the sufficient exposure of surface O atoms, single-unit-cell layer 3D Bi2WO6 shows strong selectivity for adsorption on multiform organic dyes with different charges. Remarkably, the single-unit-cell layer 3D Bi2WO6 casts profoundly enhanced photodegradation activity and especially a superior photocatalytic H2 evolution rate, which is 14-fold increase in contrast to the bulk Bi2WO6. Systematic photoelectrochemical characterizations disclose that the substantially elevated carrier density and charge separation efficiency take responsibility for the strengthened photocatalytic performance. Additionally, the possibility of single-unit-cell layer 3D Bi2WO6 as dye-sensitized solar cells (DSSC) has also been attempted and it was manifested to be a promising dye-sensitized photoanode for oxygen evolution reaction (ORR). Our work not only furnish an insight into designing single-layer assembled 3D hierarchical architecture, but also offer a multi-functional material for environmental and energy applications.

  15. Quantum Monte Carlo Studies of Bulk and Few- or Single-Layer Black Phosphorus

    Science.gov (United States)

    Shulenburger, Luke; Baczewski, Andrew; Zhu, Zhen; Guan, Jie; Tomanek, David

    2015-03-01

    The electronic and optical properties of phosphorus depend strongly on the structural properties of the material. Given the limited experimental information on the structure of phosphorene, it is natural to turn to electronic structure calculations to provide this information. Unfortunately, given phosphorus' propensity to form layered structures bound by van der Waals interactions, standard density functional theory methods provide results of uncertain accuracy. Recently, it has been demonstrated that Quantum Monte Carlo (QMC) methods achieve high accuracy when applied to solids in which van der Waals forces play a significant role. In this talk, we will present QMC results from our recent calculations on black phosphorus, focusing on the structural and energetic properties of monolayers, bilayers and bulk structures. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  16. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

    KAUST Repository

    Chiu, Ming-Hui

    2015-07-16

    The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

  17. Exploring the boundary-layer cloud-climate feedback through Single-Column Model in Radiative-Advective Equilibrium

    Science.gov (United States)

    Dal Gesso, Sara; Neggers, Roel

    2017-04-01

    Boundary-layer clouds remain the major contributor to the inter-model spread in future climate predictions. Although light has been shed on the low-level cloud feedback, much remains to be understood about the physical mechanisms at the basis of the response of these clouds to climate warming. In the present study, EC-EARTH Single Column Model (SCM) is used to explore the boundary-layer cloud-climate feedback by imposing a Radiative-Advective Equilibrium, namely a balance between the radiative cooling and the advection of warm air. 30-year simulations are performed with the SCM forced by high-frequency cfSites outputs of the CMIP5 simulations of the host General Circulation Model (GCM) for both the AMIP and AMIP4K experiments. As this study exclusively focuses on marine low-level cloud regimes, the simulations are performed at the Barbados Cloud Observatory in the so-called "dry period", when the large-scale forcing are representative of subtropical marine trade-wind conditions. A first step is to assess how representative long-term SCM simulations are of their host GCM. Subsequently, the SCM is forced by different GCMs within the same framework. In this way, the contribution of the physical parameterization to the boundary-layer cloud feedback is isolated from the dynamics, and systematically evaluated. Finally, a procedure to integrate Large-Eddy Simulations and observations into this framework is discussed.

  18. Inventing atomic resolution scanning dielectric microscopy to see a single protein complex operation live at resonance in a neuron without touching or adulterating the cell.

    Science.gov (United States)

    Agrawal, Lokesh; Sahu, Satyajit; Ghosh, Subrata; Shiga, Takashi; Fujita, Daisuke; Bandyopadhyay, Anirban

    2016-12-01

    A substantial ion flow in a normally wet protein masks any other forms of signal transmission. We use hysteresis and linear conduction (both are artifacts) as a marker to precisely wet a protein, which restricts the ionic conduction (hysteresis disappears), and at the same time, it is not denatured (quantized conductance and Raman spectra are intact). Pure electric visualization of proteins at work by eliminating the screening of ions, electrons, would change the way we study biology. Here we discuss the technical challenges resolved for imaging a protein or live cell using nonlinear dielectric response (spatial distribution of conductance, capacitance and phase, GCP trio). We electromagnetically triggered electrical, mechanical, thermal and ionic resonant vibrations in a protein. During resonant oscillations, we imaged the protein using resonant scanning tunneling microscopy of biomaterials (Brestum) and during ionic firing we imaged live what happens inside an axon core of a neuron by using our atomic scale scanning dielectric microscopy (Asadim). Both Asadim and Brestum are housed in a homebuilt scanning tunneling microscope (bio-STM) and a special micro-grid developed by us (patent JP-5187804) for fractal supercomputing. We found the trick to turn a membrane transparent and see inside without making any physical contact. We image live that a protein molecule adopts a unique configuration for each resonance frequency, - thus far unknown to biology. "Membrane alone fires" is found to be wrong after a century, micro-neuro-filaments communicate prior to firing to decide its necessity and then regulate it suitably. We introduce a series of technologies e.g., fractal grid, point contact, micro THz antenna, to discover that from atomic structure to a living cell, the biomaterials vibrate collectively.

  19. Full Polymer Dielectric Elastomeric Actuators (DEA Functionalised with Carbon Nanotubes and High-K Ceramics

    Directory of Open Access Journals (Sweden)

    Tilo Köckritz

    2016-09-01

    Full Text Available Dielectric elastomer actuators (DEA are special devices which have a simple working and construction principle and outstanding actuation properties. The DEAs consist of a combination of different materials for the dielectric and electrode layers. The combination of these layers causes incompatibilities in their interconnections. Dramatic differences in the mechanical properties and bad adhesion of the layers are the principal causes for the reduction of the actuation displacement and strong reduction of lifetime. Common DEAs achieve actuation displacements of 2% and a durability of some million cycles. The following investigations represent a new approach to solving the problems of common systems. The investigated DEA consists of only one basic raw polymer, which was modified according to the required demands of each layer. The basic raw polymer was modified with single-walled carbon nanotubes or high-k ceramics, for example, lead magnesium niobate-lead titanate. The development of the full polymer DEA comprised the development of materials and technologies to realise a reproducible layer composition. It was proven that the full polymer actuator worked according to the theoretical rules. The investigated system achieved actuation displacements above 20% regarding thickness, outstanding interconnections at each layer without any failures, and durability above 3 million cycles without any indication of an impending malfunction.

  20. Preparation and applications of mechanically exfoliated single-layer and multilayer MoS₂ and WSe₂ nanosheets.

    Science.gov (United States)

    Li, Hai; Wu, Jumiati; Yin, Zongyou; Zhang, Hua

    2014-04-15

    Although great progress has been achieved in the study of graphene, the small current ON/OFF ratio in graphene-based field-effect transistors (FETs) limits its application in the fields of conventional transistors or logic circuits for low-power electronic switching. Recently, layered transition metal dichalcogenide (TMD) materials, especially MoS2, have attracted increasing attention. In contrast to its bulk material with an indirect band gap, a single-layer (1L) MoS2 nanosheet is a semiconductor with a direct band gap of ~1.8 eV, which makes it a promising candidate for optoelectronic applications due to the enhancement of photoluminescence and high current ON/OFF ratio. Compared with TMD nanosheets prepared by chemical vapor deposition and liquid exfoliation, mechanically exfoliated ones possess pristine, clean, and high-quality structures, which are suitable for the fundamental study and potential applications based on their intrinsic thickness-dependent properties. In this Account, we summarize our recent research on the preparation, characterization, and applications of 1L and multilayer MoS2 and WSe2 nanosheets produced by mechanical exfoliation. During the preparation of nanosheets, we proposed a simple optical identification method to distinguish 1L and multilayer MoS2 and WSe2 nanosheets on a Si substrate coated with 90 and 300 nm SiO2. In addition, we used Raman spectroscopy to characterize mechanically exfoliated 1L and multilayer WSe2 nanosheets. For the first time, a new Raman peak at 308 cm(-1) was observed in the spectra of WSe2 nanosheets except for the 1L WSe2 nanosheet. Importantly, we found that the 1L WSe2 nanosheet is very sensitive to the laser power during characterization. The high power laser-induced local oxidation of WSe2 nanosheets and single crystals was monitored by Raman spectroscopy and atomic force microscopy (AFM). Hexagonal and monoclinic structured WO3 thin films were obtained from the local oxidization of single- to triple-layer