Generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser in a cascade of nonlinear crystals

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Jensen, Ole Bjarlin; Sumpf, Bernd

2014-01-01

Many applications, e.g., within biomedicine stand to benefit greatly from the development of diode laser-based multi- Watt efficient compact green laser sources. The low power of existing diode lasers in the green area (about 100 mW) means that the most promising approach remains nonlinear...... frequency conversion of infrared tapered diode lasers. Here, we describe the generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser, itself yielding 10 W at 1063 nm. This SHG is performed in single pass through a cascade of two PPMgO:LN crystals with re...... power of 3.5 W corresponds to a power enhancement greater than 2 compared to SHG in each of the crystals individually and is the highest visible output power generated by frequency conversion of a single diode laser. Such laser sources provide the necessary pump power for biophotonics applications...

Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

Energy Technology Data Exchange (ETDEWEB)

Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

2000-04-01

Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

Seven-laser diode end-pumped Nd

International Nuclear Information System (INIS)

Berger, J.; Welch, D.F.; Streifer, W.; Scifres, D.R.; Smith, J.J.; Hoffman, H.J.; Peisley, D.; Radecki, D.

1988-01-01

End pumping of solid-state lasers by single semiconductor laser diode arrays (LDAs) is efficient, but the maximum pump power is limited by the source brightness and matching the TEM/sub 00/ Nd:YAG cavity mode. To increase the output power from a solid-state Nd:YAG laser, one option is to employ a multiplicity of LDA to provide more pump power than is available from a single source. The authors report herein a 660-mW cw TEM/sub 00/ Nd:YAG laser, end-pumped by seven LDA, with bundled optical fibers coupling the light from each diode to the Nd:YAG rod end. The maximum electrical-to-optical conversion efficiency attained was 4.7% at 560-mW Nd:YAG output power. The LDAs (SDL-2430-C, 100 μm wide) were mounted on separate thermoelectric coolers to tune emission wavelength to the Nd:YAG absorption bands. The diodes were operated at their rated output power (50,000 h mean time to failure). The 110/125-μm diam 0.37-N.A. fibers were butt coupled to the lasers and glued together into a hexagonal close pack. The authors have obtained the highest average power demonstrated to date in the TEM/sub 00/ mode from a Nd:YAG laser, reliably end-pumped by multiple laser diodes with good efficiency

Ultrafast photoconductive detector-laser-diode transmitter

International Nuclear Information System (INIS)

Wang, C.L.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.; Davis, B.A.

1987-01-01

The authors report the results of an experiment in which they used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When they irradiated the neutron-damaged Cr-doped Ga/As detector with 17-MeV electron beams, the temporal response of was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. They are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2012-01-01

. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

Diode-pumped, single frequency Nd:YLF laser for 60-beam OMEGA laser pulse-shaping system

International Nuclear Information System (INIS)

Okishev, A.V.; Seka, W.

1997-01-01

The operational conditions of the OMEGA pulse-shaping system require an extremely reliable and low-maintenance master oscillator. The authors have developed a diode-pumped, single-frequency, pulsed Nd:YLF laser for this application. The laser generates Q-switched pulses of ∼160-ns duration and ∼10-microJ energy content at the 1,053-nm wavelength with low amplitude fluctuations (<0.6% rms) and low temporal jitter (<7 ns rms). Amplitude and frequency feedback stabilization systems have been used for high long-term amplitude and frequency stability

Direct diode lasers with comparable beam quality to fiber, CO2, and solid state lasers

Science.gov (United States)

Huang, Robin K.; Chann, Bien; Burgess, James; Kaiman, Michael; Overman, Robert; Glenn, John D.; Tayebati, Parviz

2012-03-01

TeraDiode has produced kW-class ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 2,040 W from a 50 μm core diameter, 0.15 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.75 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 2-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers.

Disruptive laser diode source for embedded LIDAR sensors

Science.gov (United States)

Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

2017-02-01

Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

High-power green diode laser systems for biomedical applications

DEFF Research Database (Denmark)

Müller, André

propagation parameters and therefore efficiently increases the brightness of compact and cost-effective diode laser systems. The condition of overlapping beams is an ideal scenario for subsequent frequency conversion. Based on sum-frequency generation of two beam combined diode lasers a 3.2 fold increase...... output power of frequency doubled single emitters is limited by thermal effects potentially resulting in laser degradation and failure. In this work new concepts for power scaling of visible diode laser systems are introduced that help to overcome current limitations and enhance the application potential....... Implementing the developed concept of frequency converted, beam combined diode laser systems will help to overcome the high pump thresholds for ultrabroad bandwidth titanium sapphire lasers, leading towards diode based high-resolution optical coherence tomography with enhanced image quality. In their entirety...

Radiation effects in semiconductor laser diode arrays

International Nuclear Information System (INIS)

Carson, R.F.

1988-01-01

The effects of radiation events are important for many of the present and future applications that involve optoelectronic components. Laser diodes show a strong resistance to degradation by gamma rays, prompt x-rays and (to a lesser extent), neutrons. This is due to the short carrier lifetime that is associated with stimulated emission and the high current injection conditions that are present in these devices. Radiation-resistant properties should carry over to many of the more recently developed devices such as multi-stripe array and broad area laser diodes. There are, however, additional considerations for radiation tolerance that are introduced by these devices. Arrays and other high power laser diodes have larger active region volumes than lower power single stripe devices. In addition, evanescent field coupling between stripes, the material quality available from newer MOCVD epitaxial growth techniques, and stripe definition methods may all influence the radiation tolerance of the high power laser diode devices. Radiation tests have been conducted on various GaAs-GaAlAs laser diode array and broad area devices. Tests involving total gamma dose have indicated that high power laser diodes and arrays have small degradations in light power output with current input after 4 MRad(Si) of radiation from a Co 60 source. Additional test results involving flash x-rays indicate that high power diode lasers and arrays are tolerant to 10 12 rads(Si)/sec, when observed on microsecond or millisecond time scales. High power diode laser devices were also irradiated with neutrons to a fluence of 10 14 neutrons/cm 2 with some degradation of threshold current level

Fast all-optical flip-flop based on a single distributed feedback laser diode.

Science.gov (United States)

Huybrechts, Koen; Morthier, Geert; Baets, Roel

2008-07-21

Since there is an increasing demand for fast networks and switches, the electronic data processing imposes a severe bottleneck and all-optical processing techniques will be required in the future. All-optical flip-flops are one of the key components because they can act as temporary memory elements. Several designs have already been demonstrated but they are often relatively slow or complex to fabricate. We demonstrate experimentally fast flip-flop operation in a single DFB laser diode which is one of the standard elements in today's telecommunication industry. Injecting continuous wave light in the laser diode, a bistability is obtained due to the spatial hole burning effect. We can switch between the two states by using pulses with energies below 200 fJ resulting in flip-flop operation with switching times below 75 ps and repetition rates of up to 2 GHz.

Diode-side-pumped 131 W, 1319 nm single-wavelength cw Nd:YAG laser.

Science.gov (United States)

Haiyong, Zhu; Ge, Zhang; Chenghui, Huang; Yong, Wei; Lingxiong, Huang; Jing, Chen; Weidong, Chen; Zhenqiang, Chen

2007-01-20

A diode-side-pumped high-power 1319 nm single-wavelength Nd:YAG continuous wave (cw) laser is described. Through reasonable coating design of the cavity mirrors, the 1064 nm strongest line as well as the 1338 nm one have been successfully suppressed. The laser output powers corresponding to four groups of different output couplers operating at 1319 nm single wavelength have been compared. The output coupler with the transmission T=5.3% has the highest output power, and a 131 W cw output power was achieved at the pumping power of 555 W. The optical-optical conversion efficiency is 23.6%, and the slope efficiency is 46%. The output power is higher than the total output power of the dual-wavelength laser operating at 1319 nm and 1338 nm in the experiment.

Direct diode lasers and their advantages for materials processing and other applications

Science.gov (United States)

Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

2015-03-01

The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but

Powering laser diode systems

CERN Document Server

Trestman, Grigoriy A

2017-01-01

This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

The Effect of Diode Laser With Different Parameters on Root Fracture During Irrigation Procedure.

Science.gov (United States)

Karataş, Ertuğrul; Arslan, Hakan; Topçuoğlu, Hüseyin Sinan; Yılmaz, Cenk Burak; Yeter, Kübra Yesildal; Ayrancı, Leyla Benan

2016-06-01

The aim of this study is to compare the effect of a single diode laser application and agitation of EDTA with diode laser with different parameters at different time intervals on root fracture. Ninety mandibular incisors were instrumented except the negative control group. The specimens were divided randomly into 10 groups according to final irrigation procedure: (G1) non-instrumented; (G2) distilled water; (G3) 15% EDTA; (G4) ultrasonically agitated EDTA; (G5) single 1.5W/100 Hz Diode laser; (G6) single 3W/100 Hz Diode laser; (G7) 1.5W/100 Hz Diode laser agitation of EDTA for 20 s; (G8) 1.5W/100 Hz Diode laser agitation of EDTA for 40 s; (G9) 3W/100 Hz Diode laser agitation of EDTA for 20 s; and (G10) 3W/100 Hz Diode laser agitation of EDTA for 40 s. The specimens were filled, mounted in acrylic resin, and compression strength test was performed on each specimen. Statistical analysis was carried out using one way ANOVA and Tukey's post hoc tests (P = 0.05). The statistical analysis revealed that there were statistically significant differences among the groups (P Laser-agitated irrigation with a 3W/100 Hz Diode laser for both 20 s and 40 s decreased the fracture resistance of teeth. Copyright © 2015 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

Diode lasers optimized in brightness for fiber laser pumping

Science.gov (United States)

Kelemen, M.; Gilly, J.; Friedmann, P.; Hilzensauer, S.; Ogrodowski, L.; Kissel, H.; Biesenbach, J.

2018-02-01

In diode laser applications for fiber laser pumping and fiber-coupled direct diode laser systems high brightness becomes essential in the last years. Fiber coupled modules benefit from continuous improvements of high-power diode lasers on chip level regarding output power, efficiency and beam characteristics resulting in record highbrightness values and increased pump power. To gain high brightness not only output power must be increased, but also near field widths and far field angles have to be below a certain value for higher power levels because brightness is proportional to output power divided by beam quality. While fast axis far fields typically show a current independent behaviour, for broadarea lasers far-fields in the slow axis suffer from a strong current and temperature dependence, limiting the brightness and therefore their use in fibre coupled modules. These limitations can be overcome by carefully optimizing chip temperature, thermal lensing and lateral mode structure by epitaxial and lateral resonator designs and processing. We present our latest results for InGaAs/AlGaAs broad-area single emitters with resonator lengths of 4mm emitting at 976nm and illustrate the improvements in beam quality over the last years. By optimizing the diode laser design a record value of the brightness for broad-area lasers with 4mm resonator length of 126 MW/cm2sr has been demonstrated with a maximum wall-plug efficiency of more than 70%. From these design also pump modules based on 9 mini-bars consisting of 5 emitters each have been realized with 360W pump power.

Diode pumped solid state laser by two diodes

International Nuclear Information System (INIS)

Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

1995-01-01

A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

International Nuclear Information System (INIS)

Bengi, A.; Uslu, H.; Asar, T.; Altindal, S.; Cetin, S.S.; Mammadov, T.S.; Ozcelik, S.

2011-01-01

Research highlights: → It is well known the quantum-well (QW) lasers are the most important optoelectronic devices in many application fields. The temperature dependent I-V and C-V measurements allow us to understand the different aspects of conduction mechanisms of these devices. The C-V and G/ω-V measurements should be done over a wide range of temperature in order to have a better understanding of the nature of barrier height and conduction mechanisms. Therefore, in this study, the main electrical parameters of GaAs/Al x Ga 1-x As single quantum well (SQW) laser diodes were determined from the admittance spectroscopy C-V and G/ω-V method in the temperature range of 80-360 K. In addition, the capacitance and conductance values measured under both reverse and forward bias were corrected in order to eliminate the effect of R s to obtain the real diode capacitance. - Abstract: In this study, the main electrical parameters, such as doping concentration (N D ), barrier height (Φ CV ), depletion layer width (W D ), series resistance (R s ) and Fermi energy level (E F ), of GaAs/Al x Ga 1-x As single quantum well (SQW) laser diodes were investigated using the admittance spectroscopy (C-V and G/ω-V) method in the temperature range of 80-360 K. The reverse bias C -2 vs. V plots gives a straight line in a wide voltage region, especially in weak inversion region. The values of Φ CV at the absolute temperature (T = 0 K) and the temperature coefficient (α) of barrier height were found as 1.22 eV and -8.65 x 10 -4 eV/K, respectively. This value of α is in a close agreement with α of GaAs band gap (-5.45 x 10 -4 eV/K). Experimental results show that the capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the diode are affected by not only temperature but also R s . The capacitance-voltage-temperature (C-V-T) and conductance-voltage-temperature (G/ω-V-T) characteristics confirmed that temperature and R s of the diode have effects on the

Ultra-high brightness wavelength-stabilized kW-class fiber coupled diode laser

Science.gov (United States)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-03-01

TeraDiode has produced a fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Further advances of these ultra-bright lasers are also projected.

Power blue and green laser diodes and their applications

Science.gov (United States)

Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

2013-03-01

InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

Visible high power fiber coupled diode lasers

Science.gov (United States)

Köhler, Bernd; Drovs, Simon; Stoiber, Michael; Dürsch, Sascha; Kissel, Heiko; Könning, Tobias; Biesenbach, Jens; König, Harald; Lell, Alfred; Stojetz, Bernhard; Löffler, Andreas; Strauß, Uwe

2018-02-01

In this paper we report on further development of fiber coupled high-power diode lasers in the visible spectral range. New visible laser modules presented in this paper include the use of multi single emitter arrays @ 450 nm leading to a 120 W fiber coupled unit with a beam quality of 44 mm x mrad, as well as very compact modules with multi-W output power from 405 nm to 640 nm. However, as these lasers are based on single emitters, power scaling quickly leads to bulky laser units with a lot of optical components to be aligned. We also report on a new approach based on 450 nm diode laser bars, which dramatically reduces size and alignment effort. These activities were performed within the German government-funded project "BlauLas": a maximum output power of 80 W per bar has been demonstrated @ 450 nm. We show results of a 200 μm NA0.22 fiber coupled 35 W source @ 450 nm, which has been reduced in size by a factor of 25 compared to standard single emitter approach. In addition, we will present a 200 μm NA0.22 fiber coupled laser unit with an output power of 135 W.

Extremely high-brightness kW-class fiber coupled diode lasers with wavelength stabilization

Science.gov (United States)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-06-01

TeraDiode has produced ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Higher brightness fiber-coupled diode lasers, including a module with 418 W of power coupled to a 100 μm, 0.15 NA fiber, have also been demonstrated.

High Power Diode Lasers with External Feedback: Overview and Prospects

DEFF Research Database (Denmark)

Chi, Mingjun; Petersen, Paul Michael

2012-01-01

In summary, different external-cavity feedback techniques to improve the spatial beam quality and narrow the linewidth of the output beam from both BALs and TDLs are presented. Broad-area diode laser system with external-cavity feedback around 800 nm can produce several Watts of output power...... with a good beam quality. Tapered diode laser systems with external-cavity feedback around 800 and 1060 nm can deliver more than 2 W output power with diffraction-limited beam quality and can be operated in single-longitudinal mode. These high-brightness, narrow linewidth, and tunable external-cavity diode...... lasers emerge as the next generation of compact lasers that have the potential of replacing conventional high power laser systems in many existing applications....

Laser diode package with enhanced cooling

Science.gov (United States)

Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

2011-09-13

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Laser Diode Beam Basics, Manipulations and Characterizations

CERN Document Server

Sun, Haiyin

2012-01-01

Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

Investigation of single lateral mode for 852nm diode lasers with ridge waveguide design

Science.gov (United States)

Liu, Chu; Guan, Baolu; Mi, Guoxin; Liao, Yiru; Liu, Zhenyang; Li, Jianjun; Xu, Chen

2016-11-01

852nm Narrow linewidth lasers can be widely used in the field of ultra-fine spectrum measurement, Cs atomic clock control, satellite and optical fiber communication and so on. Furthermore, the stability of the single lateral mode is a very important condition to guarantee the narrow linewidth lasers. Here we investigate experimentally the influence of the narrow ridge structure and asymmetrical waveguide design on the stability single lateral mode of an 852nm diode laser. According to the waveguide theoretical analysis, ridge mesa etch depth (Δη , related to the refractive index difference of parallel to the junction) and ridge mesa width (the narrower the more control force to low order mode) are the main elements for lateral modes. In this paper, we designed different structures to investigate and verify major factors for lateral mode by experiment, and to confirm our thought. Finally, the 5μm mesa ridge laser, 800nm etch depth, with groove structure obtains excellent steady single lateral mode output by 150mA operating current and 30°C temperature. The optical spectrum FWHM is 0.5nm and side mode suppression ratio is 27dBm with uncoated. The laser with 1mm cavity length showed the threshold current of 50mA, a lasing wavelength of λ = 852.6nm, slope efficiency of above 0.7mW/mA. We accomplished single lateral mode of ridge waveguide edge-emitting lasers which can also be used as a laser source in the ultra-narrow linewidth external cavity laser system.

Transurethral vaporesection of prostate: diode laser or thulium laser?

Science.gov (United States)

Tan, Xinji; Zhang, Xiaobo; Li, Dongjie; Chen, Xiong; Dai, Yuanqing; Gu, Jie; Chen, Mingquan; Hu, Sheng; Bai, Yao; Ning, Yu

2018-05-01

This study compared the safety and effectiveness of the diode laser and thulium laser during prostate transurethral vaporesection for treating benign prostate hyperplasia (BPH). We retrospectively analyzed 205 patients with BPH who underwent a diode laser or thulium laser technique for prostate transurethral vaporesection from June 2016 to June 2017 and who were followed up for 3 months. Baseline characteristics of the patients, perioperative data, postoperative outcomes, and complications were compared. We also assessed the International Prostate Symptom Score (IPSS), quality of life (QoL), maximum flow rate (Q max ), average flow rate (AFR), and postvoid residual volume (PVR) at 1 and 3 months postoperatively to evaluate the functional improvement of each group. There were no significant differences between the diode laser and thulium laser groups related to age, prostate volume, operative time, postoperative hospital stays, hospitalization costs, or perioperative data. The catheterization time was 3.5 ± 0.8 days for the diode laser group and 4.7 ± 1.8 days for the thulium laser group (p diode laser and thulium laser contributes to safe, effective transurethral vaporesection in patients with symptomatic BPH. Diode laser, however, is better than thulium laser for prostate transurethral vaporesection because of its shorter catheterization time. The choice of surgical approach is more important than the choice of laser types during clinical decision making for transurethral laser prostatectomy.

Diode lasers: From laboratory to industry

Science.gov (United States)

Nasim, Hira; Jamil, Yasir

2014-03-01

The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

Science.gov (United States)

Numata, Kenji; Alalusi, Mazin; Stolpner, Lew; Margaritis, Georgios; Camp, Jordan; Krainak, Michael

2014-01-01

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 104 at 10 mHz. The PWECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W...... of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2....... The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected....

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

Science.gov (United States)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-06-20

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

3.5 W of diffraction-limited green light at 515 nm from SHG of a single-frequency tapered diode laser

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Hansen, Anders Kragh; Müller, André

2017-01-01

Multi-Watt efficient compact green laser sources are required for a number of applications e.g. within biophotonics, laser pumping and laser displays. We present generation of 3.5 W of diffraction-limited green light at 515 nm by second harmonic generation (SHG) of a tapered diode laser, itself...... yielding more than 9 W at 1030 nm. SHG is performed in single pass through a cascade of two nonlinear crystals with re-focusing and dispersion compensating optics between the two nonlinear crystals. The laser is single-frequency and the output power is stabilized to better than ±0.4%....

Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

Energy Technology Data Exchange (ETDEWEB)

Goto, Shu; Ohta, Makoto; Yabuki, Yoshifumi; Hoshina, Yukio; Hashizu, Toshihiro; Ikeda, Masao [Development Center, Sony Shiroishi Semiconductor, Inc., 3-53-2 Shiratori, Shiroishi, Miyagi, 989-0734 (Japan); Naganuma, Kaori; Tamamura, Koshi [Core Technology Development Group, Micro Systems Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi Kanagawa, 243-0041 (Japan)

2003-11-01

AlGaInN-based blue-violet laser diodes with a single broad-area stripe emitter were successfully fabricated on GaN substrates. Three stripe widths were examined; 10, 50, and 100 {mu}m, and the maximum light output power of 0.94 W under cw operation at 20 C was achieved for the sample with a stripe width of 10 {mu}m. A super high-power laser diode array was fabricated using 11 of these high-performance laser chips, with a resultant output power of 6.1 W under cw operation at 20 C. This result represents the highest reported output power for blue-violet laser diodes. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Tapered diode laser pumped 946 nm Nd:YAG laser

DEFF Research Database (Denmark)

Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Petersen, Paul Michael

2009-01-01

We successfully implemented a 946 nm Nd:YAG laser based on a 808 nm tapered diode pump laser. The tapered diode is developed at the Ferdinand-Braun-Institute fur Hochstfrequenztechnik in Germany. Figure 2 shows the experimental setup and results of each pump source coupled into a 1.5 mm crystal...... laser, we show that tapered diode laser pumping potentially increase the power of 946 nm lasers by a factor of two and reduce the threshold by a factor of three....

Atomic spectroscopy with diode lasers

International Nuclear Information System (INIS)

Tino, G.M.

1994-01-01

Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

Enhanced vbasis laser diode package

Science.gov (United States)

Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

2014-08-19

A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

OpenAIRE

Cappuccio, Joseph C., Jr.

1988-01-01

Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

Frequency locking of compact laser-diode modules at 633 nm

Science.gov (United States)

Nölleke, Christian; Leisching, Patrick; Blume, Gunnar; Jedrzejczyk, Daniel; Pohl, Johannes; Feise, David; Sahm, Alexander; Paschke, Katrin

2018-02-01

This work reports on a compact diode-laser module emitting at 633 nm. The emission frequency can be tuned with temperature and current, while optical feedback of an internal DBR grating ensures single-mode operation. The laser diode is integrated into a micro-fabricated package, which includes optics for beam shaping, a miniaturized optical isolator, and a vapor cell as frequency reference. The achieved absolute frequency stability is below 10-8 , while the output power can be more than 10 mW. This compact absolute frequency-stabilized laser system can replace gas lasers and may be integrated in future quantum technology devices.

3.1 W narrowband blue external cavity diode laser

Science.gov (United States)

Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

2018-03-01

We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

Diode laser-pumped Ho:YLF laser

International Nuclear Information System (INIS)

Hemmati, H.

1987-01-01

The author reports laser action in Ho:YLF at 2.06 μm following optical pumping with a cw diode laser array. Diode laser-pumped Nd-YAG and Ho:YAG have been reported recently. Lasers with a wavelength of 2 μm have medical and optical communication applications. The diode laser light is focused with a 60-mm focal length lens onto the YLF crystal. A high-reflectivity mirror with 100-mm radius of curvature was used as the output coupler. The lasing threshold was at 5 mWof incident power. This is higher than expected considering that a high reflector was used as the output coupler. However, a more uniform cooling of the crystal is expected to lower the lasing threshold. With 100 mW of pump power coupled into the crystal, --20 mW of 2-μm radiation was observed from this unoptimized setup. The 2-μm laser output is highly sensitive to output coupler alignment, YLF crystal temperature, and pump laser wavelength. The 20% optical conversion efficiency achieved in his preliminary measurements is expected to be improved by better crystal cooling, proper matching of laser wavelength to crystal absorption, variations in the concentration of Ho and sensitizers and use of a proper output coupler. A study of the parameters mentioned above and the effect of crystal temperature on the laser output is under way

High power diode lasers emitting from 639 nm to 690 nm

Science.gov (United States)

Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

2014-03-01

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

Diode laser based light sources for biomedical applications

DEFF Research Database (Denmark)

Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin

2013-01-01

Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

Femtosecond Cr:LiSAF and Cr:LiCAF lasers pumped by tapered diode lasers.

Science.gov (United States)

Demirbas, Umit; Schmalz, Michael; Sumpf, Bernd; Erbert, Götz; Petrich, Gale S; Kolodziejski, Leslie A; Fujimoto, James G; Kärtner, Franz X; Leitenstorfer, Alfred

2011-10-10

We report compact, low-cost and efficient Cr:Colquiriite lasers that are pumped by high brightness tapered laser diodes. The tapered laser diodes provided 1 to 1.2 W of output power around 675 nm, at an electrical-to-optical conversion efficiency of about 30%. Using a single tapered diode laser as the pump source, we have demonstrated output powers of 500 mW and 410 mW together with slope efficiencies of 47% and 41% from continuous wave (cw) Cr:LiSAF and Cr:LiCAF lasers, respectively. In cw mode-locked operation, sub-100-fs pulse trains with average power between 200 mW and 250 mW were obtained at repetition rates around 100 MHz. Upon pumping the Cr:Colquiriite lasers with two tapered laser diodes (one from each side of the crystal), we have observed scaling of cw powers to 850 mW in Cr:LiSAF and to 650 mW in Cr:LiCAF. From the double side pumped Cr:LiCAF laser, we have also obtained ~220 fs long pulses with 5.4 nJ of pulse energy at 77 MHz repetition rate. These are the highest energy levels reported from Cr:Colquiriite so far at these repetition rates. Our findings indicate that tapered diodes in the red spectral region are likely to become the standard pump source for Cr:Colquiriite lasers in the near future. Moreover, the simplified pumping scheme might facilitate efficient commercialization of Cr:Colquiriite systems, bearing the potential to significantly boost applications of cw and femtosecond lasers in this spectral region (750-1000 nm).

Endoscopic diode laser therapy for chronic radiation proctitis.

Science.gov (United States)

Polese, Lino; Marini, Lucia; Rizzato, Roberto; Picardi, Edgardo; Merigliano, Stefano

2018-01-01

The purpose of this study is to determine the effectiveness of endoscopic diode laser therapy in patients presenting rectal bleeding due to chronic radiation proctitis (CRP). A retrospective analysis of CRP patients who underwent diode laser therapy in a single institution between 2010 and 2016 was carried out. The patients were treated by non-contact fibers without sedation in an outpatient setting. Fourteen patients (median age 77, range 73-87 years) diagnosed with CRP who had undergone high-dose radiotherapy for prostatic cancer and who presented with rectal bleeding were included. Six required blood transfusions. Antiplatelet (three patients) and anticoagulant (two patients) therapy was not suspended during the treatments. The patients underwent a median of two sessions; overall, a mean of 1684 J of laser energy per session was used. Bleeding was resolved in 10/14 (71%) patients, and other two patients showed improvement (93%). Only one patient, who did not complete the treatment, required blood transfusions after laser therapy; no complications were noted during or after the procedures. Study findings demonstrated that endoscopic non-contact diode laser treatment is safe and effective in CRP patients, even in those receiving antiplatelet and/or anticoagulant therapy.

Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser

DEFF Research Database (Denmark)

Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Tidemand-Lichtenberg, Peter

2010-01-01

Using a tunable external cavity tapered diode laser (ECDL) pumped quasi-three-level Nd:YAG laser, a fivefold reduction in threshold and twofold increase in slope efficiency is demonstrated when compared to a traditional broad area diode laser pump source. A TEM00 power of 800 mW with 65% slope...... efficiency is obtained, the highest reported TEM00 power from any 946 nm Nd:YAG laser pumped by a single emitter diode laser pump source. A quantum efficiency of 0.85 has been estimated from experimental data using a simple quasi-three-level model. The reported value is in good agreement with published...

Single-frequency blue light generation by single-pass sum-frequency generation in a coupled ring cavity tapered laser

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Petersen, Paul Michael

2013-01-01

A generic approach for generation of tunable single frequency light is presented. 340 mW of near diffraction limited, single-frequency, and tunable blue light around 459 nm is generated by sum-frequency generation (SFG) between two tunable tapered diode lasers. One diode laser is operated in a ring...... cavity and another tapered diode laser is single-passed through a nonlinear crystal which is contained in the coupled ring cavity. Using this method, the single-pass conversion efficiency is more than 25%. In contrast to SFG in an external cavity, the system is entirely self-stabilized with no electronic...

Tunable diode-pumped-LNA laser

International Nuclear Information System (INIS)

Cassimi, A.; Hardy, V.; Hamel, J.; Leduc, M.

1987-01-01

Diode-pumped crystals provided recently new compact laser devices. We report the first end pumping of a La x Nd 1-x MgAl 11 O 19 (LNA) crystal using a 200mW diode array (Spectra Diode Lab). We also report the first results obtained with a 1mW diode (SONY). This C.W. laser can be tuned from 1.048μm to 1.086μm. Without selective elements in the cavity, the laser emits around 1.054μm with a threshold of 24mW and a slope efficiency of 4.4% (output mirror of transmission T = 1%) when pumped by the diode array. With the selective elements, the threshold increases to 100mW and we obtain a power of 4mW for a pump power of 200mW

Recent advancements in spectroscopy using tunable diode lasers

International Nuclear Information System (INIS)

Nasim, Hira; Jamil, Yasir

2013-01-01

Spectroscopy using tunable diode lasers is an area of research that has gone through a dramatic evolution over the last few years, principally because of new exciting approaches in the field of atomic and molecular spectroscopy. This article attempts to review major recent advancements in the field of diode laser based spectroscopy. The discussion covers the developments made so far in the field of diode lasers and illustrates comprehensively the properties of free-running diode lasers. Since the commercially available free-running diode lasers are not suitable for high-precision spectroscopic studies, various techniques developed so far for converting these free-running diode lasers into true narrow linewidth tunable laser sources are discussed comprehensively herein. The potential uses of diode lasers in different spectroscopic fields and their extensive list of applications have also been included, which may be interesting for the novice and the advanced user as well. (topical review)

Respiratory complications after diode-laser-assisted tonsillotomy.

Science.gov (United States)

Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

2014-08-01

Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

Compact laser-diode-based femtosecond sources

International Nuclear Information System (INIS)

Brown, C T A; Cataluna, M A; Lagatsky, A A; Rafailov, E U; Agate, M B; Leburn, C G; Sibbett, W

2004-01-01

This paper describes the development of compact femtosecond laser systems that are capable of being directly pumped by laser diodes or are based directly on laser diodes. The paper demonstrates the latest results in a highly efficient vibronic based gain medium and a diode-pumped Yb:KYW laser is reported that has a wall plug efficiency >14%. A Cr 4+ :YAG oscillator is described that generates transform-limited pulses of 81 fs duration at a pulse repetition frequency of >4 GHz. The development of Cr 3+ :LiSAF lasers that can be operated using power supplies based on batteries is briefly discussed. We also present a summary of work being carried out on the generation of fs-pulses from laser diodes and discuss the important issues in this area. Finally, we outline results obtained on the generation of pulses as short as 550 fs directly from a two-section quantum dot laser without any external pulse compression

Quasi-CW Laser Diode Bar Life Tests

Science.gov (United States)

Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

1997-01-01

NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

High power diode pumped solid state lasers

International Nuclear Information System (INIS)

Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

1992-01-01

Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

Silicon monolithic microchannel-cooled laser diode array

International Nuclear Information System (INIS)

Skidmore, J. A.; Freitas, B. L.; Crawford, J.; Satariano, J.; Utterback, E.; DiMercurio, L.; Cutter, K.; Sutton, S.

2000-01-01

A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm 2 is achieved cw at an emission wavelength of ∼808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics

5-nJ Femtosecond Ti3+:sapphire laser pumped with a single 1 W green diode

Science.gov (United States)

Muti, Abdullah; Kocabas, Askin; Sennaroglu, Alphan

2018-05-01

We report a Kerr-lens mode-locked, extended-cavity femtosecond Ti3+:sapphire laser directly pumped at 520 nm with a 1 W AlInGaN green diode. To obtain energy scaling, the short x-cavity was extended with a q-preserving multi-pass cavity to reduce the pulse repetition rate to 5.78 MHz. With 880 mW of incident pump power, we obtained as high as 90 mW of continuous-wave output power from the short cavity by using a 3% output coupler. In the Kerr-lens mode-locked regime, the extended cavity produced nearly transform-limited 95 fs pulses at 776 nm. The resulting energy and peak power of the pulses were 5.1 nJ and 53 kW, respectively. To our knowledge, this represents the highest pulse energy directly obtained to date from a mode-locked, single-diode-pumped Ti3+:sapphire laser.

High current, high bandwidth laser diode current driver

Science.gov (United States)

Copeland, David J.; Zimmerman, Robert K., Jr.

1991-01-01

A laser diode current driver has been developed for free space laser communications. The driver provides 300 mA peak modulation current and exhibits an optical risetime of less than 400 ps. The current and optical pulses are well behaved and show minimal ringing. The driver is well suited for QPPM modulation at data rates up to 440 Mbit/s. Much previous work has championed current steering circuits; in contrast, the present driver is a single-ended on/off switch. This results in twice the power efficiency as a current steering driver. The driver electrical efficiency for QPPM data is 34 percent. The high speed switch is realized with a Ku-band GaAsFET transistor, with a suitable pre-drive circuit, on a hybrid microcircuit adjacent to the laser diode.

The Beam Characteristics of High Power Diode Laser Stack

Science.gov (United States)

Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

2018-03-01

Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

Diode laser (980nm) cartilage reshaping

Science.gov (United States)

El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

2011-03-01

Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

Arbitrary waveform generator to improve laser diode driver performance

Science.gov (United States)

Fulkerson, Jr, Edward Steven

2015-11-03

An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

Emission characteristics of laser and superluminescent diodes with a gradient-index waveguide

Energy Technology Data Exchange (ETDEWEB)

Bazarov, A.E.; Garmash, I.A.; Goldobin, I.S.; Eliukhin, V.A.; Pak, G.T.

1987-05-01

A study is made of the emission characteristics of laser and superluminescent diodes with gradient-index waveguides based on Al(x)Ga(1-x)As solid solutions, operating in the CW mode at room temperature. The coupling coefficients for a single-mode fiber are 25 and 18 percent for laser and superluminescent diodes, respectively, when an interface device consisting of three microlenses is used. 6 references.

Novel 755-nm diode laser vs. conventional 755-nm scanned alexandrite laser: Side-by-side comparison pilot study for thorax and axillary hair removal.

Science.gov (United States)

Paasch, Uwe; Wagner, Justinus A; Paasch, Hartmut W

2015-01-01

Alexandrite (755 nm) and diode lasers (800-810 nm) are commonly used for hair removal. The alexandrite laser technology is somewhat cumbersome whereas new diode lasers are more robust. Recently, alexandrite-like 755 nm wavelength diodes became available. To compare the efficacy, tolerability, and subject satisfaction of a 755 nm diode laser operated in conventional (HR) and non-conventional in-motion (SHR) modes with a conventional scanned alexandrite 755 nm laser for chest and axillary hair removal. A prospective, single-center, proof of principle study was designed to evaluate the safety, efficacy and handling of a 755 nm diode laser system in comparison to a standard alexandrite 755 nm scanning hair removal laser. The new 755 nm diode is suitable to be used in SHR and HR mode and has been tested for its safety, efficacy and handling in a volunteer with success. Overall, both systems showed a high efficacy in hair reduction (88.8% 755 nm diode laser vs. 77.7% 755 nm alexandrite laser). Also, during the study period, no severe adverse effects were reported. The new 755 nm diode laser is as effective and safe as the traditional 755 nm alexandrite laser. Additionally, treatment with the 755 nm diode laser with HR and SHR modes was found to be less painful.

High average power diode pumped solid state lasers for CALIOPE

International Nuclear Information System (INIS)

Comaskey, B.; Halpin, J.; Moran, B.

1994-07-01

Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

Diode Laser for Laryngeal Surgery: a Systematic Review.

Science.gov (United States)

Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

2016-04-01

Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects.

Fixed, low radiant exposure vs. incremental radiant exposure approach for diode laser hair reduction: a randomized, split axilla, comparative single-blinded trial.

Science.gov (United States)

Pavlović, M D; Adamič, M; Nenadić, D

2015-12-01

Diode lasers are the most commonly used treatment modalities for unwanted hair reduction. Only a few controlled clinical trials but not a single randomized controlled trial (RCT) compared the impact of various laser parameters, especially radiant exposure, onto efficacy, tolerability and safety of laser hair reduction. To compare the safety, tolerability and mid-term efficacy of fixed, low and incremental radiant exposures of diode lasers (800 nm) for axillary hair removal, we conducted an intrapatient, left-to-right, patient- and assessor-blinded and controlled trial. Diode laser (800 nm) treatments were evaluated in 39 study participants (skin type II-III) with unwanted axillary hairs. Randomization and allocation to split axilla treatments were carried out by a web-based randomization tool. Six treatments were performed at 4- to 6-week intervals with study subjects blinded to the type of treatment. Final assessment of hair reduction was conducted 6 months after the last treatment by means of blinded 4-point clinical scale using photographs. The primary endpoint was reduction in hair growth, and secondary endpoints were patient-rated tolerability and satisfaction with the treatment, treatment-related pain and adverse effects. Excellent reduction in axillary hairs (≥ 76%) at 6-month follow-up visit after receiving fixed, low and incremental radiant exposure diode laser treatments was obtained in 59% and 67% of study participants respectively (Z value: 1.342, P = 0.180). Patients reported lower visual analogue scale (VAS) pain score on the fixed (4.26) than on the incremental radiant exposure side (5.64) (P diode laser treatments were less painful and better tolerated. © 2015 European Academy of Dermatology and Venereology.

Efficient generation of 3.5W laser light at 515nm by frequency doubling a single-frequency high power DBR tapered diode laser

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Hansen, Anders Kragh; Müller, André

2017-01-01

More than 3.5 W of green light at 515 nm is generated by frequency doubling a single-frequency high power DBR tapered diode laser. The frequency doubling is performed in a cascade of PPMgLN and PPMgSLT crystals in order to reach high power and avoid thermal effects present in PPMgLN at high power...

Narrow linewidth operation of a spectral beam combined diode laser bar.

Science.gov (United States)

Zhu, Zhanda; Jiang, Menghua; Cheng, Siqi; Hui, Yongling; Lei, Hong; Li, Qiang

2016-04-20

Our experiment is expected to provide an approach for realizing ultranarrow linewidth for a spectral beam combined diode laser bar. The beams of a diode laser bar are combined in a fast axis after a beam transformation system. With the help of relay optics and a transform lens with a long focal length of 1.5 m, the whole wavelength of a spectral combined laser bar can be narrowed down to 0.48 nm from more than 10 nm. We have achieved 56.7 W cw from a 19-element single bar with an M2 of 1.4  (in horizontal direction)×11.6  (in vertical direction). These parameters are good evidence that all the beams from the diode laser bar are combined together to increase the brightness.

Spectral properties of a broad-area diode laser with off-axis external-cavity feedback

DEFF Research Database (Denmark)

Chi, Mingjun; Petersen, Paul Michael

2013-01-01

Spectral properties, both the optical spectrum and the intensity noise spectrum, of a broad-area diode laser with off-axis external-cavity feedback are presented. We show that the optical spectrum of the diode laser system is shifted to longer wavelengths due to the external-cavity feedback....... The intensity noise spectrum of the diode laser shows that the intensity noise is increased strongly by the external-cavity feedback. External-cavity modes are excited in the external cavity even in the off-axis configuration. The peak spacing of the intensity noise spectrum shows that single roundtrip external......-cavity modes are excited. We believe that the four-wave mixing process in the broad-area diode laser is responsible for the establishment of the external-cavity mode....

Advancements of ultra-high peak power laser diode arrays

Science.gov (United States)

Crawford, D.; Thiagarajan, P.; Goings, J.; Caliva, B.; Smith, S.; Walker, R.

2018-02-01

Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.

Diode Laser Application in Soft Tissue Oral Surgery

Science.gov (United States)

Azma, Ehsan; Safavi, Nassimeh

2013-01-01

Introduction: Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Discussion: Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. Conclusion: The diode laser can be used as a modality for oral soft tissue surgery PMID:25606331

Physics of frequency-modulated comb generation in quantum-well diode lasers

Science.gov (United States)

Dong, Mark; Cundiff, Steven T.; Winful, Herbert G.

2018-05-01

We investigate the physical origin of frequency-modulated combs generated from single-section semiconductor diode lasers based on quantum wells, isolating the essential physics necessary for comb generation. We find that the two effects necessary for comb generation—spatial hole burning (leading to multimode operation) and four-wave mixing (leading to phase locking)—are indeed present in some quantum-well systems. The physics of comb generation in quantum wells is similar to that in quantum dot and quantum cascade lasers. We discuss the nature of the spectral phase and some important material parameters of these diode lasers.

Nonimaging concentrators for diode-pumped slab lasers

Science.gov (United States)

Lacovara, Philip; Gleckman, Philip L.; Holman, Robert L.; Winston, Roland

1991-10-01

Diode-pumped slab lasers require concentrators for high-average power operation. We detail the properties of diode lasers and slab lasers which set the concentration requirements and the concentrator design methodologies that are used, and describe some concentrator designs used in high-average power slab lasers at Lincoln Laboratory.

Diode laser pumping

International Nuclear Information System (INIS)

Skagerlund, L.E.

1975-01-01

A diode laser is pumped or pulsed by a repeated capacitive discharge. A capacitor is periodically charged from a dc voltage source via a transformer, the capacitor being discharged through the diode laser via a controlled switching means after one or more charging periods. During a first interval of each charging period the transformer, while unloaded, stores a specific amount of energy supplied from the dc voltage source. During a subsequent interval of the charging period said specific amount of energy is transmitted from the transformer to the capacitor. The discharging of the capacitor takes place during a first interval of a charging period. (auth)

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals

Science.gov (United States)

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-11-01

The spectral properties and laser performance of Er:SrF2 single crystals were investigated and compared with Er:CaF2. Er:SrF2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er3+:4I11/2 level) than those of Er:CaF2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W.

outcome of diode laser cyclophotocoagulation in neovascular ...

African Journals Online (AJOL)

Duke

including, ruby, ND:YAG, argon, krypton and, more recently, trans scleral cyclophotocoagulation with the diode laser, which has been shown to be more effective with less side effects than the others. The diode laser, 810nm, has. 4,5 greater melanin absorption compared to other lasers. Of the various cyclodestructive laser ...

Next generation diode lasers with enhanced brightness

Science.gov (United States)

Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

2018-02-01

High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

High temperature semiconductor diode laser pumps for high energy laser applications

Science.gov (United States)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

High-brightness tapered laser diodes with photonic crystal structures

Science.gov (United States)

Li, Yi; Du, Weichuan; Kun, Zhou; Gao, Songxin; Ma, Yi; Tang, Chun

2018-02-01

Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≍1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.

Electrically injected GaAsBi/GaAs single quantum well laser diodes

Directory of Open Access Journals (Sweden)

Juanjuan Liu

2017-11-01

Full Text Available We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77∼150 K, and reduced to 90 K in the range of 150∼273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77∼273 K.

Developing a compact multiple laser diode combiner with a single fiber stub output for handheld IoT devices

Science.gov (United States)

Lee, Minseok; June, Seunghyeok; Kim, Sehwan

2018-01-01

Many biomedical applications require an efficient combination and localization of multiple discrete light sources ( e.g., fluorescence and absorbance imaging). We present a compact 6 channel combiner that couples the output of independent solid-state light sources into a single 400-μm-diameter fiber stub for handheld Internet of Things (IoT) devices. We demonstrate average coupling efficiencies > 80% for each of the 6 laser diodes installed into the prototype. The design supports the use of continuous wave and intensity-modulated laser diodes. This fiber-stub-type beam combiner could be used to construct custom multi-wavelength sources for tissue oximeters, microscopes and molecular imaging technologies. In order to validate its suitability, we applied the developed fiber-stub-type beam combiner to a multi-wavelength light source for a handheld IoT device and demonstrated its feasibility for smart healthcare through a tumor-mimicking silicon phantom.

16 W output power by high-efficient spectral beam combining of DBR-tapered diode lasers

DEFF Research Database (Denmark)

Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin

2011-01-01

output power achieved by spectral beam combining of two single element tapered diode lasers. Since spectral beam combining does not affect beam propagation parameters, M2-values of 1.8 (fast axis) and 3.3 (slow axis) match the M2- values of the laser with lowest spatial coherence. The principle......Up to 16 W output power has been obtained using spectral beam combining of two 1063 nm DBR-tapered diode lasers. Using a reflecting volume Bragg grating, a combining efficiency as high as 93.7% is achieved, resulting in a single beam with high spatial coherence. The result represents the highest...... of spectral beam combining used in our experiments can be expanded to combine more than two tapered diode lasers and hence it is expected that the output power may be increased even further in the future....

16 W output power by high-efficient spectral beam combining of DBR-tapered diode lasers.

Science.gov (United States)

Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-01-17

Up to 16 W output power has been obtained using spectral beam combining of two 1063 nm DBR-tapered diode lasers. Using a reflecting volume Bragg grating, a combining efficiency as high as 93.7% is achieved, resulting in a single beam with high spatial coherence. The result represents the highest output power achieved by spectral beam combining of two single element tapered diode lasers. Since spectral beam combining does not affect beam propagation parameters, M2-values of 1.8 (fast axis) and 3.3 (slow axis) match the M2-values of the laser with lowest spatial coherence. The principle of spectral beam combining used in our experiments can be expanded to combine more than two tapered diode lasers and hence it is expected that the output power may be increased even further in the future.

Widely Tunable High-Power Tapered Diode Laser at 1060 nm

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Sumpf, Bernd; Erbert, Götz

2011-01-01

We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser...... operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range....

Diode lasers and arrays

International Nuclear Information System (INIS)

Streifer, W.

1988-01-01

This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

Discrete mode laser diodes for FTTH/PON applications up to 10 Gbit/s

NARCIS (Netherlands)

O'Carroll, J.; Phelan, R.; Kelly, B.; Byrne, D.; Latkowski, S.; Anandarajah, P.M.; Barry, L.P.

2012-01-01

Discrete Mode Laser Diodes (DMLDs) present an economic approach with a focus on high volume manufacturability of single mode lasers using a single step fabrication process. We report on a DMLD designed for operation in the 1550 nm window with high Side Mode Suppression Ratio (SMSR) over a wide

Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

Science.gov (United States)

Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

2017-02-01

High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

Wavelength stabilized multi-kW diode laser systems

Science.gov (United States)

Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

2015-03-01

We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

Modelling of the thermal parameters of high-power linear laser-diode arrays. Two-dimensional transient model

International Nuclear Information System (INIS)

Bezotosnyi, V V; Kumykov, Kh Kh

1998-01-01

A two-dimensional transient thermal model of an injection laser is developed. This model makes it possible to analyse the temperature profiles in pulsed and cw stripe lasers with an arbitrary width of the stripe contact, and also in linear laser-diode arrays. This can be done for any durations and repetition rates of the pump pulses. The model can also be applied to two-dimensional laser-diode arrays operating quasicontinuously. An analysis is reported of the influence of various structural parameters of a diode array on the thermal regime of a single laser. The temperature distributions along the cavity axis are investigated for different variants of mounting a crystal on a heat sink. It is found that the temperature drop along the cavity length in cw and quasi-cw laser diodes may exceed 20%. (lasers)

High power diode lasers converted to the visible

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Hansen, Anders Kragh; Andersen, Peter E.

2017-01-01

High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking high power diode lasers with good spatial quality. In this paper, we highlight some of our recent...... results in nonlinear frequency conversion of high power near infrared diode lasers to the visible spectral region....

Photoluminescence excitation measurements using pressure-tuned laser diodes

Science.gov (United States)

Bercha, Artem; Ivonyak, Yurii; Medryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

2015-06-01

Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available.

Photoluminescence excitation measurements using pressure-tuned laser diodes

International Nuclear Information System (INIS)

Bercha, Artem; Ivonyak, Yurii; Mędryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

2015-01-01

Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available

Compact green-diode-based lasers for biophotonic bioimaging

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Hansen, Anders Kragh; Petersen, Paul Michael

2014-01-01

Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers.......Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers....

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Active stabilization of a diode laser injection lock.

Science.gov (United States)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-06-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Laser materials processing with diode lasers

OpenAIRE

Li, Lin; Lawrence, Jonathan; Spencer, Julian T.

1996-01-01

Laser materials processing is currently dominated by CO2, Nd-YAG and Excimer lasers. Continuous advances in semiconductor laser technology over the last decade have increased the average power output of the devices annualy by two fold, resulting in the commercial availability of the diode lasers today with delivery output powers in excess of 60W in CW mode and 5kW in qasi-CW mode. The advantages of compactness, high reliability, high efficiency and potential low cost, due to the mass producti...

High Power High Efficiency Diode Laser Stack for Processing

Science.gov (United States)

Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan

2018-03-01

High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.

Laser diode technology and applications

International Nuclear Information System (INIS)

Figueroa, L.

1989-01-01

This book covers a wide range of semiconductor laser technology, from new laser structures and laser design to applications in communications, remote sensing, and optoelectronics. The authors report on new laser diode physics and applications and present a survey of the state of the art as well as progress in new developments

High-power direct diode laser output by spectral beam combining

Science.gov (United States)

Tan, Hao; Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao

2018-03-01

We demonstrate a spectral beam combining scheme based on multiple mini-bar stacks, which have more diode laser combining elements, to increase the combined diode laser power and realize equal beam quality in both the fast and slow axes. A spectral beam combining diode laser output of 1130 W is achieved with an operating current of 75 A. When a 9.6 X de-magnifying telescope is introduced between the output mirror and the diffraction grating, to restrain cross-talk among diode laser emitters, a 710 W spectral beam combining diode laser output is achieved at the operating current of 70 A, and the beam quality on the fast and slow axes of the combined beam is about 7.5 mm mrad and 7.3 mm mrad respectively. The power reduction is caused by the existence of a couple resonator between the rear facet of the diode laser and the fast axis collimation lens, and it should be eliminated by using diode laser chips with higher front facet transmission efficiency and a fast axis collimation lens with lower residual reflectivity.

High power diode laser remelting of metals

International Nuclear Information System (INIS)

Chmelickova, H; Tomastik, J; Ctvrtlik, R; Supik, J; Nemecek, S; Misek, M

2014-01-01

This article is focused on the laser surface remelting of the steel samples with predefined overlapping of the laser spots. The goal of our experimental work was to evaluate microstructure and hardness both in overlapped zone and single pass ones for three kinds of ferrous metals with different content of carbon, cast iron, non-alloy structural steel and tool steel. High power fibre coupled diode laser Laserline LDF 3600-100 was used with robotic guided processing head equipped by the laser beam homogenizer that creates rectangular beam shape with uniform intensity distribution. Each sample was treated with identical process parameters - laser power, beam diameter, focus position, speed of motion and 40% spot overlap. Dimensions and structures of the remelted zone, zone of the partial melting, heat affected zone and base material were detected and measured by means of laser scanning and optical microscopes. Hardness progress in the vertical axis of the overlapped zone from remelted surface layer to base material was measured and compared with the hardness of the single spots. The most hardness growth was found for cast iron, the least for structural steel. Experiment results will be used to processing parameters optimization for each tested material separately.

Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

Science.gov (United States)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

2004-01-01

Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

Multi-kW high-brightness fiber coupled diode laser based on two dimensional stacked tailored diode bars

Science.gov (United States)

Bayer, Andreas; Unger, Andreas; Köhler, Bernd; Küster, Matthias; Dürsch, Sascha; Kissel, Heiko; Irwin, David A.; Bodem, Christian; Plappert, Nora; Kersten, Maik; Biesenbach, Jens

2016-03-01

The demand for high brightness fiber coupled diode laser devices in the multi kW power region is mainly driven by industrial applications for materials processing, like brazing, cladding and metal welding, which require a beam quality better than 30 mm x mrad and power levels above 3kW. Reliability, modularity, and cost effectiveness are key factors for success in the market. We have developed a scalable and modular diode laser architecture that fulfills these requirements through use of a simple beam shaping concept based on two dimensional stacking of tailored diode bars mounted on specially designed, tap water cooled heat sinks. The base element of the concept is a tailored diode laser bar with an epitaxial and lateral structure designed such that the desired beam quality in slow-axis direction can be realized without using sophisticated beam shaping optics. The optical design concept is based on fast-axis collimator (FAC) and slow-axis collimator (SAC) lenses followed by only one additional focusing optic for efficient coupling into a 400 μm fiber with a numerical aperture (NA) of 0.12. To fulfill the requirements of scalability and modularity, four tailored bars are populated on a reduced size, tap water cooled heat sink. The diodes on these building blocks are collimated simply via FAC and SAC. The building blocks can be stacked vertically resulting in a two-dimensional diode stack, which enables a compact design of the laser source with minimum beam path length. For a single wavelength, up to eight of these building blocks, implying a total of 32 tailored bars, can be stacked into a submodule, polarization multiplexed, and coupled into a 400 μm, 0.12NA fiber. Scalability into the multi kW region is realized by wavelength combining of replaceable submodules in the spectral range from 900 - 1100 nm. We present results of a laser source based on this architecture with an output power of more than 4 kW and a beam quality of 25 mm x mrad.

Narrow-line, cw orange light generation in a diode-pumped Nd:YVO4 laser using volume Bragg gratings.

Science.gov (United States)

Chen, Y L; Chen, W W; Du, C E; Chang, W K; Wang, J L; Chung, T Y; Chen, Y H

2009-12-07

We report on the demonstration of a narrow-line, cw orange 593-nm laser achieved via intracavity sum-frequency generation (SFG) of a diode-pumped dual-wavelength (1064 and 1342 nm) Nd:YVO(4) laser using two volume Bragg grating (VBG) reflectors. At diode pump power of up to 3.6 W, the 593-nm intracavity SFG laser radiates at the single longitudinal mode of spectral linewidth as narrow as approximately 15 MHz. More than 23-mW single-longitudinal-mode or 40-mW, diode pump power) 593-nm orange lights can be obtained from this compact laser system. Spectral tuning of the orange light was performed via the temperature tuning of the two VBGs in this system, achieving an effective tuning rate of ~5 pm/degrees C.

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

Science.gov (United States)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

Efficient concept for generation of diffraction-limited green light by sum-frequency generation of spectrally combined tapered diode lasers

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Hasler, Karl-Heinz

2012-01-01

In order to increase the power of visible diode laser systems in an efficient manner, we propose spectral beam combining with subsequent sum-frequency generation. We show that this approach, in comparison with second harmonic generation of single emitters, can enhance the available power signific......In order to increase the power of visible diode laser systems in an efficient manner, we propose spectral beam combining with subsequent sum-frequency generation. We show that this approach, in comparison with second harmonic generation of single emitters, can enhance the available power...... significantly. By combining two distributed Bragg reflector tapered diode lasers we achieve a 2.5–3.2 fold increase in power and a maximum of 3.9 W of diffraction-limited green light. At this power level, green diode laser systems have a high application potential, e.g., within the biomedical field. Our concept...

Near-diffraction-limited segmented broad area diode laser based on off-axis spectral beam combining

DEFF Research Database (Denmark)

Jensen, O.B.; Thestrup Nielsen, Birgitte; Andersen, Peter E.

2006-01-01

-feedback scheme we are able to improve the beam quality of the laser by a factor of 23 from M-2 = 55 for the free-running diode laser to M-2 = 2.4 for the laser with feedback at a drive current of 2.2 A. The improved M-2 value is a factor of 3.4 below M-2 = 8.2 for a single free-running segment. This is the first......The beam quality of a 500-mu m-wide broad area diode laser with five active segments has been improved beyond the beam quality of the individual segments. The principle of this new laser system is based on off-axis feedback in combination with spectral beam combining. By using a double...... time that the beam quality of a segmented broad area diode laser has been improved beyond the beam quality of the individual segments....

Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

Computer-assisted experiments with a laser diode

Energy Technology Data Exchange (ETDEWEB)

Kraftmakher, Yaakov, E-mail: krafty@mail.biu.ac.il [Department of Physics, Bar-Ilan University, Ramat-Gan 52900 (Israel)

2011-05-15

A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The h/e ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a data-acquisition system, the measurements are possible in a short time. The frequency response of the laser diode is determined in the range 10-10{sup 7} Hz. The experiments are suitable for undergraduate laboratories and for classroom demonstrations on semiconductors.

Computer-assisted experiments with a laser diode

International Nuclear Information System (INIS)

Kraftmakher, Yaakov

2011-01-01

A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The h/e ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a data-acquisition system, the measurements are possible in a short time. The frequency response of the laser diode is determined in the range 10-10 7 Hz. The experiments are suitable for undergraduate laboratories and for classroom demonstrations on semiconductors.

Selective isotope determination of lanthanum by diode-laser-initiated resonance-ionization mass spectrometry

International Nuclear Information System (INIS)

Young, J.P.; Shaw, R.W.

1995-01-01

A diode-laser step has been incorporated into a resonance-ionization mass spectrometry optical excitation process to enhance the isotopic selectivity of the technique. Lanthanum isotope ratio enhancements as high as 10 3 were achieved by use of a single-frequency cw diode laser tuned to excite the first step of a three-step excitation--ionization optical process; the subsequent steps were excited by use of a pulsed dye laser. Applying the same optical technique, we measured atomic hyperfine constants for the high-lying even-parity 4 D 5/2 state of lanthanum at 30 354 cm --1 . The general utility of this spectral approach is discussed

Overview on new diode lasers for defense applications

Science.gov (United States)

Neukum, Joerg

2012-11-01

Diode lasers have a broad wavelength range, from the visible to beyond 2.2μm. This allows for various applications in the defense sector, ranging from classic pumping of DPSSL in range finders or target designators, up to pumping directed energy weapons in the 50+ kW range. Also direct diode applications for illumination above 1.55μm, or direct IR countermeasures are of interest. Here an overview is given on some new wavelengths and applications which are recently under discussion. In this overview the following aspects are reviewed: • High Power CW pumps at 808 / 880 / 940nm • Pumps for DPAL - Diode Pumped Alkali Lasers • High Power Diode Lasers in the range market.

Active stabilization of a diode laser injection lock

Energy Technology Data Exchange (ETDEWEB)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep [Department of Physics, University of Washington, P.O. Box 351560, Seattle, Washington 98195-1560 (United States)

2016-06-15

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Active stabilization of a diode laser injection lock

International Nuclear Information System (INIS)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-01-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Studies of diode-pumped solid-state lasers based on Nd:KGW and Nd:YAG

International Nuclear Information System (INIS)

Ibrahim, Akram Yousif

1996-01-01

The experimental part of the thesis was dedicated to the studies of diode-pumped solid- state lasers. it includes experiments with end-pumped continuous wave (CW) Nd-doped crystals. In particular, we have concentrated to Nd:KGW, a relatively new and not studied in the literature about the laser materials. We have performed some basics measurements of this material. A fibre bundle coupled laser diode array was used as a pump source. We have investigated two main optical arrangements for the pump, allowing operation in two regimes: 1- Low pump power operation using selected output power from a single of the fibre bundle. 2- high pump power operation using the total output power from the bundle. The main parameters of the cavities we use (e.g. the cavity mode and the pumping spot size), were determined using the matrix approach and the equations for the propagation of the Gaussian beams. The highest output power obtained in this work for Nd:KGW with a transverse electromagnetic (TEM 0 0) single-mode, continuous (CW) operation, was 400 mW for 1700 mW pumping power from the diode laser. We present also data about the performance of a diode pumped Nd:YAG crystal. Our experiment shows that Nd:KGW is a promising material of low and medium pumping power levels. (Author)

Development of a 100 W, single frequency, CW Nd:YAG Laser

International Nuclear Information System (INIS)

Veitch, P.J.; Mudge, D.; Munch, J.; Hamilton, M.W.; Ostermeyer, M.; Hosken, D.; Brooks, A.

2002-01-01

Full text: High power, diode-laser-pumped, continuous wave (cw) solid-state lasers with excellent beam quality, efficiency and reliability are required for demanding applications, including gravitational wave interferometry, where current additional requirements include single frequency, low noise and Nd:YAG. Our approach is a chain of injection locked laser oscillators, theoretically capable of achieving the lowest noise possible. We use a single-frequency (100 mW) master laser to injection lock a medium-power (10 W) laser that in turn injection locks a 100 W laser. Injection locking requires an optimized, single mode, power slave laser at each stage. We shall describe the nearly completed 10 W brass-board laser, which will also be deployed at the ACIGA Test Facility at Gingin. We shall also describe our 100 W laser using a scalable diode pumping scheme, an active control of thermal lensing and a stable-unstable resonator. Initial tests showed mode control to be limited by thermal focusing and thermally induced birefringence in the Nd:YAG medium at 70 W output. Recent efforts have identified the source of the thermal lens and significantly reduced its magnitude, leading to a modified design. We shall present our latest results from the experiments to demonstrate single mode, single frequency laser at 100 W

Efficient generation of 3.9 W of diffraction-limited green light with spectrally combined tapered diode lasers

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Andersen, Peter E.

We propose an efficient concept increasing the power of diode laser systems in the visible spectral range. In comparison with second harmonic generation of single emitters, spectral beam combining with subsequent sum-frequency generation enhances the available power significantly. Combining two...... 1060 nm tapered diode lasers, we achieve a 2.5-3.2 fold increase of green light with a maximum power of 3.9 Watts in a diffraction-limited beam. At this level, diode lasers have a high application potential, for example, within the biomedical field. In order to enhance the power even further, our...

Compact 2100 nm laser diode module for next-generation DIRCM

Science.gov (United States)

Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

2017-10-01

Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

The Effect of Diode Laser on Planktonic Enterococcus faecalis in Infected Root Canals in an Ex Vivo Model.

Science.gov (United States)

Cretella, Gilda; Lajolo, Carlo; Castagnola, Raffaella; Somma, Francesco; Inchingolo, MariaTeresa; Marigo, Luca

2017-04-01

This study examined the bactericidal effect of diode laser irradiation against intracanal Enterococcus faecalis. m total of 128 extracted single-rooted and single-canal teeth were treated with ProTaper instruments (Dentsply Maillefer, Ballaigues, Switzerland). A total of 120 root canals were inoculated with E. faecalis for 21 days, and the samples were randomly divided into five groups: Group 1 (n = 24) samples were irrigated with only saline solution (positive controls); Group 2 (n = 24) was treated with only 5.25% sodium hypochlorite; Group 3 (n = 24) was irrigated with saline solutions activated by diode laser; Group 4 (n = 24) was treated with 5.25% sodium hypochlorite activated by diode laser; and Group 5 (n = 24) was irrigated with saline solution with methylene blue dye activated by the diode laser Fox (Sweden & Martina, Padova, Italy); additionally, eight teeth were not contaminated and their canals were irrigated with saline solution and used as a negative control. The Uro-Quick system was used to determine the microbial residual charge. The data were analyzed using Pearson's chi-square test (p  0.001). Evidence indicates that the diode laser was not more effective than sodium hypochlorite in reducing free bacteria.

Characterization of High-power Quasi-cw Laser Diode Arrays

Science.gov (United States)

Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

2005-01-01

NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

Resonance ionization mass spectrometry using tunable diode lasers

International Nuclear Information System (INIS)

Shaw, R.W.; Young, J.P.; Smith, D.H.

1990-01-01

Tunable semiconductor diode lasers will find many important applications in atomic spectroscopy. They exhibit the desirable attributes of lasers: narrow bandwidth, tunability, and spatial coherence. At the same time, they possess few of the disadvantages of other tunable lasers. They require no alignment, are simple to operate, and are inexpensive. Practical laser spectroscopic instruments can be envisioned. The authors have applied diode lasers to resonance ionization mass spectrometry (RIMS) of some of the lanthanide elements. Sub-Doppler resolution spectra have been recorded and have been used for atomic hyperfine structure analysis. Isotopically-selective ionization has been accomplished, even in cases where photons from a broadband dye laser are part of the overall ionization process and where the isotopic spectral shift is very small. A convenient RIMS instrument for isotope ratio measurements that employs only diode lasers, along with electric field ionization, should be possible

Laterally injected light-emitting diode and laser diode

Science.gov (United States)

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Diode Lasers used in Plastic Welding and Selective Laser Soldering - Applications and Products

Science.gov (United States)

Reinl, S.

Aside from conventional welding methods, laser welding of plastics has established itself as a proven bonding method. The component-conserving and clean process offers numerous advantages and enables welding of sensitive assemblies in automotive, electronic, medical, human care, food packaging and consumer electronics markets. Diode lasers are established since years within plastic welding applications. Also, soft soldering using laser radiation is becoming more and more significant in the field of direct diode laser applications. Fast power controllability combined with a contactless temperature measurement to minimize thermal damage make the diode laser an ideal tool for this application. These advantages come in to full effect when soldering of increasingly small parts in temperature sensitive environments is necessary.

Effect of laser-diode light on growth of Lactuca sativa L

International Nuclear Information System (INIS)

Yamazaki, A.; Tsuchiya, H.; Miyajima, H.; Honma, T.; Kan, H.

2000-01-01

Development of an effective, high-power, low-cost, artificial light source for use in plant-growing facilities would be very beneficial for plant production. Recently, the laser-diode lamp was proposed as a new type of light source for plant production. The advantages of the laser-diode lamp over conventional light sources are its high electrical-to-optical power conversion efficiency, low thermal radiation, easy set-up for high power and pulse irradiation, small weight and small volume for mounting, and selectivity for proper wavelength. Because laser light itself differs from the light sources presently used in plant growing, we confirmed the possibility of growing plants under the laser-diode light using lettuces. Lettuce seedlings with 5-6 leaves were grown under a laser-diode lamp panel with 30 pieces of high-power and high-efficiency AlGaInP laser-diodes. The power of each laser-diode lamp was 500 mW, and the wavelength was 680 nm, which was efficient for photosynthesis. The lettuce plants were able to grow under the laser-diode light. However, plants were lighter and had thinner leaves than those grown under high-pressure sodium lamps. (author)

Building block diode laser concept for high brightness laser output in the kW range and its applications

Science.gov (United States)

Ferrario, Fabio; Fritsche, Haro; Grohe, Andreas; Hagen, Thomas; Kern, Holger; Koch, Ralf; Kruschke, Bastian; Reich, Axel; Sanftleben, Dennis; Steger, Ronny; Wallendorf, Till; Gries, Wolfgang

2016-03-01

The modular concept of DirectPhotonics laser systems is a big advantage regarding its manufacturability, serviceability as well as reproducibility. By sticking to identical base components an economic production allows to serve as many applications as possible while keeping the product variations minimal. The modular laser design is based on single emitters and various combining technics. In a first step we accept a reduction of the very high brightness of the single emitters by vertical stacking several diodes in fast axis. This can be theoretically done until the combined fast axis beam quality is on a comparable level as the individual diodes slow axis beam quality without loosing overall beam performance after fiber coupling. Those stacked individual emitters can be wavelength stabilized by an external resonator, providing the very same feedback to each of those laser diodes which leads to an output power of about 100 W with BPP of BPP. The 500 W building blocks are consequently designed in a way that they feature a high flexibility with regard to their emitting wavelength bandwidth. Therefore, new wavelengths can be implemented by only exchanging parts and without any additional change of the production process. This design principal theoretically offers the option to adapt the wavelength of those blocks to any applications, from UV, visible into the far IR as long as there are any diodes commercially available. This opens numerous additional applications like laser pumping, scientific applications, materials processing such as cutting and welding of copper aluminum or steel and also medical application. Typical operating at wavelengths in the 9XX nm range, these systems are designed for and mainly used in cutting and welding applications, but adapted wavelength ranges such as 793 nm and 1530 nm are also offered. Around 15XX nm the diodes are already successfully used for resonant pumping of Erbium lasers [1]. Furthermore, the fully integrated electronic

Stopping atoms with diode lasers

International Nuclear Information System (INIS)

Watts, R.N.; Wieman, C.E.

1986-01-01

The use of light pressure to cool and stop neutral atoms has been an area of considerable interest recently. Cooled neutral atoms are needed for a variety of interesting experiments involving neutral atom traps and ultrahigh-resolution spectroscopy. Laser cooling of sodium has previously been demonstrated using elegant but quite elaborate apparatus. These techniques employed stabilized dye lasers and a variety of additional sophisticated hardware. The authors have demonstrated that a frequency chirp technique can be implemented using inexpensive diode lasers and simple electronics. In this technique the atoms in an atomic beam scatter resonant photons from a counterpropagating laser beam. The momentum transfer from the photons slows the atoms. The primary difficulty is that as the atoms slow their Doppler shift changes, and so they are no longer in resonance with the incident photons. In the frequency chirp technique this is solved by rapidly changing the laser frequency so that the atoms remain in resonance. To achieve the necessary frequency sweep with a dye laser one must use an extremely sophisticated high-speed electrooptic modulator. With a diode laser, however, the frequency can be smoothly and rapidly varied over many gigahertz simply by changing the injection current

980 nm high brightness external cavity broad area diode laser bar

DEFF Research Database (Denmark)

Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte

2009-01-01

We demonstrate of-axis spectral beam combining applied to a 980 nm high power broad area diode laser bar. The experiments yielded 9 W of optical power at 30 A of operating current and the measured M2 values of the combined beam from 12 emitters were 1.9 and 6.4 for the fast and the slow axis......, respectively. The slow axis beam quality was 5-6 times better than the value obtained from a single emitter in free running mode. A high brightness of 79 MW/cm2-str was achieved using this configuration. To our knowledge, this is the highest brightness level ever achieved from a broad area diode laser bar....

Note: Demonstration of an external-cavity diode laser system immune to current and temperature fluctuations.

Science.gov (United States)

Miao, Xinyu; Yin, Longfei; Zhuang, Wei; Luo, Bin; Dang, Anhong; Chen, Jingbiao; Guo, Hong

2011-08-01

We demonstrate an external-cavity laser system using an anti-reflection coated laser diode as gain medium with about 60 nm fluorescence spectrum, and a Rb Faraday anomalous dispersion optical filter (FADOF) as frequency-selecting element with a transmission bandwidth of 1.3 GHz. With 6.4% optical feedback, a single stable longitudinal mode is obtained with a linewidth of 69 kHz. The wavelength of this laser is operating within the center of the highest transmission peak of FADOF over a diode current range from 55 mA to 142 mA and a diode temperature range from 15 °C to 35 °C, thus it is immune to the fluctuations of current and temperature.

Characterization of diode-laser stacks for high-energy-class solid state lasers

Science.gov (United States)

Pilar, Jan; Sikocinski, Pawel; Pranowicz, Alina; Divoky, Martin; Crump, P.; Staske, R.; Lucianetti, Antonio; Mocek, Tomas

2014-03-01

In this work, we present a comparative study of high power diode stacks produced by world's leading manufacturers such as DILAS, Jenoptik, and Quantel. The diode-laser stacks are characterized by central wavelength around 939 nm, duty cycle of 1 %, and maximum repetition rate of 10 Hz. The characterization includes peak power, electrical-to-optical efficiency, central wavelength and full width at half maximum (FWHM) as a function of diode current and cooling temperature. A cross-check of measurements performed at HiLASE-IoP and Ferdinand-Braun-Institut (FBH) shows very good agreement between the results. Our study reveals also the presence of discontinuities in the spectra of two diode stacks. We consider the results presented here a valuable tool to optimize pump sources for ultra-high average power lasers, including laser fusion facilities.

Wavelength beam combining of a 980-nm tapered diode laser bar in an external cavity

DEFF Research Database (Denmark)

Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte

2010-01-01

solution for preserving the beam quality of the bar in the range of that of a single emitter and at the same time, enabling the power scaling. We report spectral beam combining applied to a 12 emitter tapered laser bar at 980 nm. The external cavity has been designed for a wavelength separation of 4.0 nm......High power diode lasers are used in a large number of applications. A limiting factor for more widespread use of broad area lasers is the poor beam quality. Gain guided tapered diode lasers are ideal candidates for industrial applications that demands watt level output power with good beam quality...

Mode-locked solid state lasers using diode laser excitation

Science.gov (United States)

Holtom, Gary R [Boston, MA

2012-03-06

A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. An asymmetric cavity provides relatively large beam spot sizes in gain medium to permit efficient coupling to a volume pumped by a laser diode bar. The cavity can include a collimation region with a controlled beam spot size for insertion of a saturable absorber and dispersion components. Beam spot size is selected to provide stable mode locking based on Kerr lensing. Pulse durations of less than 100 fs can be achieved in Yb:KGW.

A novel diode laser system for photodynamic therapy

DEFF Research Database (Denmark)

Samsøe, E.; Andersen, P. E.; Petersen, P.

2001-01-01

In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...

Computer Processing Of Tunable-Diode-Laser Spectra

Science.gov (United States)

May, Randy D.

1991-01-01

Tunable-diode-laser spectrometer measuring transmission spectrum of gas operates under control of computer, which also processes measurement data. Measurements in three channels processed into spectra. Computer controls current supplied to tunable diode laser, stepping it through small increments of wavelength while processing spectral measurements at each step. Program includes library of routines for general manipulation and plotting of spectra, least-squares fitting of direct-transmission and harmonic-absorption spectra, and deconvolution for determination of laser linewidth and for removal of instrumental broadening of spectral lines.

Generation conditions of CW Diode Laser Sustained Plasma

Science.gov (United States)

Nishimoto, Koji; Matsui, Makoto; Ono, Takahiro

2016-09-01

Laser sustained plasma was generated using 1 kW class continuous wave diode laser. The laser beam was focused on the seed plasma generated by arc discharge in 1 MPa xenon lamp. The diode laser has advantages of high energy conversion efficiency of 80%, ease of maintenance, compact size and availability of conventional quartz based optics. Therefore, it has a prospect of further development compared with conventional CO2 laser. In this study, variation of the plasma shape caused by laser power is observed and also temperature distribution in the direction of plasma radius is measured by optical emission spectroscopy.

Efficient laser-diode end-pumped Nd:GGG lasers at 1054 and 1067 nm.

Science.gov (United States)

Xu, Bin; Xu, Huiying; Cai, Zhiping; Camy, P; Doualan, J L; Moncorgé, R

2014-10-10

Efficient and compact laser-diode end-pumped Nd:GGG simultaneous multiwavelength continuous-wave lasers at ∼1059, ∼1060 and ∼1062  nm were first demonstrated in a free-running 30 mm plano-concave laser cavity. The maximum output power was up to 3.92 W with a slope efficiency of about 53.6% with respect to the absorbed pump power. By inserting a 0.1 mm optical glass plate acting as a Fabry-Pérot etalon, a single-wavelength laser at ∼1067  nm with a maximum output power of 1.95 W and a slope efficiency of 28.5% can be obtained. Multiwavelength lasers, including those at ∼1054 or ∼1067  nm, were also achievable by suitably tilting the glass etalon. These simultaneous multiwavelength lasers provide a potential source for terahertz wave generation.

Investigation of Diode Pumped Alkali Laser Atmospheric Transmission Using Tunable Diode Laser Absorption Spectroscopy

Science.gov (United States)

2012-09-01

Optics Letters, 28(23):2336–2338, 2003. 48. Lavan, M. “High Energy Laser Systems for Short Range Defense”. Acta Physica Polonica -Series A General Physics...able diode laser spectrometer for the remote sensing of vehicle emissions”. Spec- trochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 60...P. “A review of recent advances in semiconductor laser based gas mon- itors”. Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 54

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

International Nuclear Information System (INIS)

Deri, R.J.

2011-01-01

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

NicoLase-An open-source diode laser combiner, fiber launch, and sequencing controller for fluorescence microscopy.

Directory of Open Access Journals (Sweden)

Philip R Nicovich

Full Text Available Modern fluorescence microscopy requires software-controlled illumination sources with high power across a wide range of wavelengths. Diode lasers meet the power requirements and combining multiple units into a single fiber launch expands their capability across the required spectral range. We present the NicoLase, an open-source diode laser combiner, fiber launch, and software sequence controller for fluorescence microscopy and super-resolution microscopy applications. Two configurations are described, giving four or six output wavelengths and one or two single-mode fiber outputs, with all CAD files, machinist drawings, and controller source code openly available.

High-Speed and Low-Energy Flip-Flop Operation of Asymmetric Active-Multimode Interferometer Bi-Stable Laser Diodes

DEFF Research Database (Denmark)

Jiang, Haisong; Chaen, Yutaka; Hagio, Takuma

2011-01-01

High-speed (121/25 ps rise/fall time) and low-switching energy (7.1 and 3.4 fJ) alloptical flip-flop operation of single-wavelength high-mesa asymmetric active-MMI bi-stable laser diodes is demonstrated for the first time using 25 ps long switching pulses.......High-speed (121/25 ps rise/fall time) and low-switching energy (7.1 and 3.4 fJ) alloptical flip-flop operation of single-wavelength high-mesa asymmetric active-MMI bi-stable laser diodes is demonstrated for the first time using 25 ps long switching pulses....

V-shaped resonators for addition of broad-area laser diode arrays

Science.gov (United States)

Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

2012-12-25

A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

A 1,470 nm diode laser in stapedotomy: Mechanical, thermal, and acoustic effects.

Science.gov (United States)

Koenraads, Simone P C; de Boorder, Tjeerd; Grolman, Wilko; Kamalski, Digna M A

2017-08-01

Multiple laser systems have been investigated for their use in stapes surgery in patients with otosclerosis. The diode 1,470 nm laser used in this study is an attractive laser system because it is easily transported and relatively inexpensive in use. This wavelength has relative high absorption in water. This study aimed to investigate the mechanical, thermal, and acoustic effects of the diode 1,470 nm laser on a stapes in an inner ear model. Experiments were performed in an inner ear model including fresh frozen human stapes. High-speed imaging with frame rates up to 2,000 frames per second (f/s) was used to visualize the effects in the vestibule during fenestration of the footplate. A special high-speed color Schlieren technique was used to study thermal effects. The sound produced by perforation was recorded by a hydrophone. Single pulse settings of the diode 1,470 nm laser were 100 ms, 3 W. Diode 1,470 nm laser fenestration showed mechanical effects with small vapor bubbles and pressure waves pushed into the vestibule. Thermal imaging visualized an increase temperature underneath the stapes footplate. Acoustic effects were limited, but larger sounds levels were reached when vaporization bubbles arise and explode in the vestibule. The diode 1,470 nm laser highly absorbs in perilymph and is capable of forming a clear fenestration in the stapes. An overlapping laser pulse will increase the risk of vapor bubbles, pressure waves, and heating the vestibule. As long as we do not know the possible damage of these effects to the inner ear function, it seems advisable to use the laser with less potential harm. Lasers Surg. Med. 49:619-624, 2017. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Diode Laser Excision of Oral Benign Lesions.

Science.gov (United States)

Mathur, Ena; Sareen, Mohit; Dhaka, Payal; Baghla, Pallavi

2015-01-01

Lasers have made tremendous progress in the field of dentistry and have turned out to be crucial in oral surgery as collateral approach for soft tissue surgery. This rapid progress can be attributed to the fact that lasers allow efficient execution of soft tissue procedures with excellent hemostasis and field visibility. When matched to scalpel, electrocautery or high frequency devices, lasers offer maximum postoperative patient comfort. Four patients agreed to undergo surgical removal of benign lesions of the oral cavity. 810 nm diode lasers were used in continuous wave mode for excisional biopsy. The specimens were sent for histopathological examination and patients were assessed on intraoperative and postoperative complications. Diode laser surgery was rapid, bloodless and well accepted by patients and led to complete resolution of the lesions. The excised specimen proved adequate for histopathological examination. Hemostasis was achieved immediately after the procedure with minimal postoperative problems, discomfort and scarring. We conclude that diode lasers are rapidly becoming the standard of care in contemporary dental practice and can be employed in procedures requiring excisional biopsy of oral soft tissue lesions with minimal problems in histopathological diagnosis.

Integrated power conditioning for laser diode arrays

International Nuclear Information System (INIS)

Hanks, R.L.; Kirbie, H.C.; Newton, M.A.; Farhoud, M.S.

1995-01-01

This compact modulator has demonstated its ability to efficiently and accurately drive a laser diode array. The addition of the crowbar protection circuit is an invaluable addition to the integrated system and is capable of protecting the laser diode array against severe damage. We showed that the correlation between measured data and simulation indicates that our modulator model is valid and can be used as a tool in the design of future systems. The spectrometer measurements that we conducted underline the imprtance of current regulation to stable laser operation

Transcanalicular laser dacryocystorhinostomy using low energy 810 nm diode laser

Directory of Open Access Journals (Sweden)

Sanjiv K Gupta

2012-01-01

Conclusions: Transcanalicular Laser DCR can be safely performed using a low power 810 nm diode laser. The surgery is elegant, minimally invasive, allows fast rehabilitation, and has an excellent success rate.

Future Solid State Lighting using LEDs and Diode Lasers

DEFF Research Database (Denmark)

Petersen, Paul Michael

2014-01-01

applications. Within the coming years, it is expected that the efficiency of blue laser diodes will approach the efficiency of infrared diode lasers. This will enable high efficiency white light generation with very high lumen per watt values. SSL today is mainly based on phosphor converted blue light emitting......Lighting accounts for 20% of all electrical energy usage. Household lighting and commercial lighting such as public and street lighting are responsible for significant greenhouse gas emissions. Therefore, currently many research initiatives focus on the development of new light sources which shows...... significant savings. Solid state lighting (SSL) based on LEDs is today the most efficient light source for generation of high quality white light. Diode lasers, however, have the potential of being more efficient than LEDs for the generation of white light. A major advantage using diode lasers for solid state...

Efficient continuous-wave 1112 nm Nd:YAG laser operation under direct diode pumping at 885 nm

International Nuclear Information System (INIS)

Gao, J; Dai, X J; Zhang, L; Wu, X D

2013-01-01

We report compact diode-end-pumped continuous-wave laser operation at 1112 nm under 885 nm diode-direct pumping for the first time. On the basis of the R 2 →Y 6 transition in a conventional Nd:YAG (yttrium aluminum garnet) single crystal, the maximum output power of 12.5 W is achieved, with an optical to optical efficiency of 46.6% and a slope efficiency of 52.9%. To the best of our knowledge, this represents the highest output at 1112 nm generated by a diode-end-pumped Nd:YAG laser. Furthermore, it is the highest optical to optical efficiency ever reported for 1112 nm Nd:YAG lasers. The short term power stability is ∼0.32% at 12.0 W output. (letter)

Synergistic skin heat shock protein expression in response to combined laser treatment with a diode laser and ablative fractional lasers.

Science.gov (United States)

Paasch, Uwe; Sonja, Grunewald; Haedersdal, Merete

2014-06-01

Diode laser-based skin heating has been shown to minimise scars by interfering with wound healing responses through the induction of heat shock proteins (HSP). HSP are also induced after ablative fractional laser (AFXL) wound healing. AFXL itself is highly recommended for scar treatment. Therefore, the sequential combination of both modalities may produce superior outcomes. The aim of this study was to examine the pretreatment effects of a diode laser before AFXL on wound healing responses in terms of HSP up-regulation in an in vitro model. Immediate responses and responses on days 1, 3 or 6 post-procedure were studied in an in vitro porcine skin model (n = 240). Untreated samples served as control. Immunohistochemical investigation (Hsp70) was performed in all untreated controls, diode laser-, AFXL-, and in diode laser + AFXL-treated samples. Hsp70 was shown to be up-regulated by all interventions between days 1 and 6 after interventions. The largest effect was caused by the combination of a diode laser and an AFXL procedure. Diode laser exposure induces a skin HSP response that can be further enhanced by sequential AFXL treatment. Clinical studies are necessary to investigate the dose response of HSP on scar formation and refine suitable laser exposure settings.

Improvement of the beam quality of a broad-area diode laser using double feedback from two external mirrors

DEFF Research Database (Denmark)

Chi, M.; Bøgh, A.-S.; Thestrup, B.

2004-01-01

In this letter, a symmetric double-feedback configuration, to improve the beam quality of broad-area diode lasers is demonstrated. With this configuration, a symmetric double-lobed far field can be obtained, and this configuration leads to good beam quality. The beam quality factor M-2 of a diode...... laser with the emitting area 1 mumx200 mum is improved by using both the asymmetric single feedback and the symmetric double feedback. M-2 values of 4.3 for the asymmetric single-feedback laser system and 3.3 for the symmetric double-feedback laser system are obtained, whereas the M-2 value...... of the freely running laser is 42. The far and the near fields are also measured and compared for the three conditions. (C) 2004 American Institute of Physics....

Direct-current polarization characteristics of various AlGaAs laser diodes

Science.gov (United States)

Fuhr, P. L.

1984-01-01

Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.

Intensity noise properties of Nd:YVO 4 microchip lasers pumped with an amplitude squeezed diode laser

Science.gov (United States)

Becher, C.; Boller, K.-J.

1998-02-01

We report on intensity noise measurements of single-frequency Nd:YVO 4 microchip lasers optically pumped with amplitude squeezed light from an injection-locked diode laser. Calibrated homodyne measurements show a minimum intensity noise of 10.1 dB above the SQL at a frequency of 100 kHz. The measured intensity noise spectra are described with high accuracy by a theoretical model based on the quantum mechanical Langevin rate equations, including classical and quantum noise sources.

Treatment of Gingival Hyperpigmentation by Diode Laser for Esthetical Purposes

Directory of Open Access Journals (Sweden)

Hanaa M. El Shenawy

2015-08-01

Full Text Available BACKGROUND: Gingival hyperpigmentation is a common esthetical concern in patients with gummy smile or excessive gingival display. Laser ablation has been recognized recently as the most effective, pleasant and reliable technique. It has the advantage of easy handling, short treatment time, hemostasis, decontamination, and sterilization effect. AIM: In the present study we wanted to explore the efficacy of a 980 nm wavelength diode laser in gingival depigmentation clinically by using both VAS and digital imaging method as means of assessment. METHODS: Diode laser ablation was done for 15 patients who requested cosmetic therapy for melanin pigmented gums. The laser beam delivered by fiberoptic with a diameter of 320 µm, the diode laser system has 980 nm wave lengths and 3 W irradiation powers, in a continuous contact mode in all cases, the entire surface of each pigmented maxillary and mandibular gingiva that required treatment was irradiated in a single session. Clinical examination and digital image analysis were done and the patients were followed up for 3 successive months. RESULTS: There was a statistically significant change in prevalence of bleeding after treatment, as none of the cases showed any signs of bleeding 1 week, 1 month and 3 months after ablation. No statistically significant change was observed in the prevalence of swelling after treatment The VAS evaluation demonstrated that only 4 patients complained of mild pain immediately after the procedure. No pain was perceived from the patients in the rest of the follow up period. There was no statistically significant change in prevalence of pain immediately after treatment compared to pain during treatment. There was a decrease in cases with mild pain after 1 week, 1 month as well as 3 months compared to pain during treatment and immediately after treatment. CONCLUSION: Within the limitations of this study, the use of diode laser was shown to be a safe and effective treatment

Compact, diode-pumped, solid-state lasers for next generation defence and security sensors

Science.gov (United States)

Silver, M.; Lee, S. T.; Borthwick, A.; McRae, I.; Jackson, D.; Alexander, W.

2015-06-01

Low-cost semiconductor laser diode pump sources have made a dramatic impact in sectors such as advanced manufacturing. They are now disrupting other sectors, such as defence and security (D&S), where Thales UK is a manufacturer of sensor systems for application on land, sea, air and man portable. In this talk, we will first give an overview of the market trends and challenges in the D&S sector. Then we will illustrate how low cost pump diodes are enabling new directions in D&S sensors, by describing two diode pumped, solid- state laser products currently under development at Thales UK. The first is a new generation of Laser Target Designators (LTD) that are used to identify targets for the secure guiding of munitions. Current systems are bulky, expensive and require large battery packs to operate. The advent of low cost diode technology, merged with our novel solid-state laser design, has created a designator that will be the smallest, lowest cost, STANAG compatible laser designator on the market. The LTD delivers greater that 50mJ per pulse up to 20Hz, and has compact dimensions of 125×70×55mm. Secondly, we describe an ultra-compact, eye-safe, solid-state laser rangefinder (LRF) with reduced size, weight and power consumption compared to existing products. The LRF measures 100×55×34mm, weighs 200g, and can range to greater than 10km with a single laser shot and at a reprate of 1Hz. This also leverages off advances in laser pump diodes, but also utilises low cost, high reliability, packaging technology commonly found in the telecoms sector. As is common in the D&S sector, the products are designed to work in extreme environments, such as wide temperature range (-40 to +71°C) and high levels of shock and vibration. These disruptive products enable next- generation laser sensors such as rangefinders, target designators and active illuminated imagers.

Diode-pumped Tm:YAP/YVO4 intracavity Raman laser

International Nuclear Information System (INIS)

Zhao, Jiaqun; Zhou, Xiaofeng; Wang, Guodong; Cheng, Ping; Xu, Feng

2017-01-01

The laser performance based on YVO 4 Raman conversion in a diode-pumped actively Q-switched Tm:YAP laser is demonstrated for the first time. With an incident diode power of 10.9 W and a pulse repetition rate of 1 kHz, the average output powers for the first Stokes laser at 2.4 μm is about 270 mW. (paper)

Tunable high-power narrow-linewidth green external-cavity GaN diode laser

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-01-01

A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system.......A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system....

Single-mode molecular beam epitaxy grown PbEuSeTe/PbTe buried-heterostructure diode lasers for CO2 high-resolution spectroscopy

International Nuclear Information System (INIS)

Feit, Z.; Kostyk, D.; Woods, R.J.; Mak, P.

1991-01-01

Buried-heterostructure tunable PbEuSeTe/PbTe lasers were fabricated using a two-stage molecular beam epitaxy growth procedure. Improvements in the processing technique yielded lasers that show performance characteristics significantly better than those reported previously. A continuous wave (cw) operating temperature of 203 K was realized, which is the highest cw operating temperature ever reported for lead-chalcogenides diode lasers. This laser exhibited exceptionally low-threshold currents of 1.4 mA at 90 K and 43 mA at 160 K with single-mode operation for injection currents up to 30I th and 0.18 mW power at 100 K. The usefulness of the laser, when operating cw at 200 K, was demonstrated by the ability to perform high-resolution spectroscopy of a low-pressure CO 2 gas sample

Spherical distribution structure of the semiconductor laser diode stack for pumping

International Nuclear Information System (INIS)

Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

2011-01-01

A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

Science.gov (United States)

Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

2018-02-01

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications 96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

Diode lasers and their applications in spectrometry

International Nuclear Information System (INIS)

Pavone, F.S.

1997-01-01

The impact of semiconductor diode laser in different fields ranging from communications to spectroscopy is becoming huge and pushes the research into developing sources satisfying the different requirements. For applications related to trace gas detection, the low amplitude noise in the light source of semiconductor diode laser is sufficient to obtain interesting results. Trace gas of molecular species as methane is interesting for different reason: it plays an important role in both radiative transport an photochemistry in the atmosphere

AASERT-97 Development of New Diode Lasers

National Research Council Canada - National Science Library

Peyghambarian, Nasser

2001-01-01

This research explored new ways for diode laser fabrications. Focused was on the development of efficient organic light emitting materials and the fabrication of laser structures incorporating these materials...

A comparative evaluation: Oral leukoplakia surgical management using diode laser, CO2 laser, and cryosurgery.

Science.gov (United States)

Natekar, Madhukar; Raghuveer, Hosahallli-Puttaiah; Rayapati, Dilip-Kumar; Shobha, Eshwara-Singh; Prashanth, Nagesh-Tavane; Rangan, Vinod; Panicker, Archana G

2017-06-01

The comparatively evaluate the three surgical treatment modalities namely cryosurgery, diode and CO2 laser surgery in terms of healing outcomes on the day of surgery, first and second week post operatively and recurrence at the end of 18 months was assessed. Thirty selected patients were divided randomly into three groups. Each group comprising of ten patients were subjected to one of the three modalities of treatment namely cryosurgery, diode laser or CO2 laser surgery for ablation of OL. Obtained data was analyzed using mainly using Chi-square and Anova tests. Study showed statistical significant differences (p > 0.05) for evaluation parameters like pain, edema and scar. The parameters like infection, recurrence, bleeding showed no statistical significance. Pain was significantly higher in CO2 laser surgery group as compared with diode laser group. There was no recurrence observed at the end of the 6 months follow up period in all the three study groups. Observations from the study highlights that all three surgical modalities used in this study were effective for treatment of OL, and the overall summation of the results of the study showed that laser therapy (CO2 and Diode) seems to offer better clinically significant results than cryotherapy. Key words: Oral premalignant lesion, leukoplakia, cryosurgery, CO2 laser surgery, diode laser surgery.

Tm:GGAG crystal for 2μm tunable diode-pumped laser

Science.gov (United States)

Šulc, Jan; Boháček, Pavel; Němec, Michal; Fibrich, Martin; Jelínková, Helena; Trunda, Bohumil; Havlák, Lubomír.; Jurek, Karel; Nikl, Martin

2016-04-01

The spectroscopy properties and wavelength tunability of diode pumped laser based on Tm-doped mixed gadolinium-gallium-aluminium garnet Gd3(GaxAl1-x)5O12 (Tm:GGAG) single crystal were investigated for the first time. The crystal was grown by Czochralski method in a slightly oxidative atmosphere using an iridium crucible. The tested Tm:GGAG sample was cut from the grown crystal boule perpendicularly to growth direction (c-axis). The composition of sample was determined using electron microprobe X-ray elemental analysis. For spectroscopy and laser experiments 3.5mm thick plane-parallel face-polished plate (without AR coatings) with composition Gd2.76Tm0.0736Ga2.67Al2.50O12 (2.67 at.% Tm/Gd) was used. A fiber (core diameter 400 μm, NA= 0.22) coupled laser diode (emission wavelength 786 nm) was used for longitudinal Tm:GGAG pumping. The laser diode was operating in the pulsed regime (10 ms pulse length, 10 Hz repetition rate, maximum power amplitude 18 W). The 145mm long semi-hemispherical laser resonator consisted of a flat pumping mirror (HR @ 1.8- 2.10 μm, HT @ 0.78 μm) and curved (r = 150mm) output coupler with a reflectivity of » 97% @ 1.8- 2.10 µm. The maximum laser output power amplitude 1.14W was obtained at wavelength 2003nm for absorbed pump power amplitude 4.12W. The laser slope efficiency was 37% in respect to absorbed pumping power. Wavelength tuning was accomplished by using 2mm thick MgF2 birefringent filter placed inside the laser resonator at the Brewster angle. The laser was continuously tunable over 180nm in a spectral region from 1856nm to 2036 nm.

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.

2016-12-29

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

Emission parameters and thermal management of single high-power 980-nm laser diodes

International Nuclear Information System (INIS)

Bezotosnyi, V V; Krokhin, O N; Oleshchenko, V A; Pevtsov, V F; Popov, Yu M; Cheshev, E A

2014-01-01

We report emission parameters of high-power cw 980-nm laser diodes (LDs) with a stripe contact width of 100 μm. On copper heat sinks of the C-mount type, a reliable output power of 10 W is obtained at a pump current of 10 A. Using a heat flow model derived from analysis of calculated and measured overall efficiencies at pump currents up to 20 A, we examine the possibility of raising the reliable power limit of a modified high-power LD mounted on heat sinks of the F-mount type using submounts with optimised geometric parameters and high thermal conductivity. The possibility of increasing the maximum reliable cw output power to 20 W with the use of similar laser crystals is discussed. (lasers)

Diode laser prostatectomy (VLAP): initial canine evaluation

Science.gov (United States)

Kopchok, George E.; Verbin, Chris; Ayres, Bruce; Peng, Shi-Kaung; White, Rodney A.

1995-05-01

This study evaluated the acute and chronic effects of diode laser (960 nm) prostatectomy using a Prolase II fiber in a canine model (n equals 5). The laser fiber consists of a 1000 um quartz fiber which reflects a cone of laser energy, at 45 degree(s) to the axis of the fiber, into the prostatic urethra (Visual Laser Ablation of Prostate). Perineal access was used to guide a 15.5 Fr cystoscope to the level of the prostate. Under visual guidance and continual saline irrigation, 60 watts of laser power was delivered for 60 seconds at 3, 9, and 12 o'clock and 30 seconds at the 6 o'clock (posterior) positions for a total energy fluence of 12,600 J. One prostate received an additional 60 second exposure at 3 and 9 o'clock for a total fluence of 19,800 J. The prostates were evaluated at one day (n equals 1) and 8 weeks (n equals 4). The histopathology of laser effects at one day show areas of necrosis with loss of glandular structures and stromal edema. Surrounding this area was a zone of degenerative glandular structures extending up to 17.5 mm (cross sectional diameter). The histopathology of the 8 week laser treated animals demonstrated dilated prostatic urethras with maximum cross- sectional diameter of 23.4 mm (mean equals 18.5 +/- 3.9 mm). This study demonstrates the effectiveness of diode laser energy for prostatic tissue coagulation and eventual sloughing. The results also demonstrate the safety of diode laser energy, with similar tissue response as seen with Nd:YAG laser, for laser prostatectomy.

Development and optimization of a diode laser for photodynamic therapy.

Science.gov (United States)

Lim, Hyun Soo

2011-01-01

This study demonstrated the development of a laser system for cancer treatment with photodynamic therapy (PDT) based on a 635 nm laser diode. In order to optimize efficacy in PDT, the ideal laser system should deliver a homogeneous nondivergent light energy with a variable spot size and specific wavelength at a stable output power. We developed a digital laser beam controller using the constant current method to protect the laser diode resonator from the current spikes and other fluctuations, and electrical faults. To improve the PDT effects, the laser system should deliver stable laser energy in continuous wave (CW), burst mode and super burst mode, with variable irradiation times depending on the tumor type and condition. The experimental results showed the diode laser system described herein was eminently suitable for PDT. The laser beam was homogeneous without diverging and the output power increased stably and in a linear manner from 10 mW to 1500 mW according to the increasing input current. Variation between the set and delivered output was less than 7%. The diode laser system developed by the author for use in PDT was compact, user-friendly, and delivered a stable and easily adjustable output power at a specific wavelength and user-set emission modes.

Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

Science.gov (United States)

Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

2016-03-01

We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

Comparison of diode laser and Er:YAG lasers in the treatment of ankyloglossia.

Science.gov (United States)

Aras, Mutan Hamdi; Göregen, Mustafa; Güngörmüş, Metin; Akgül, Hayati Murat

2010-04-01

The purpose of this study was to compare the tolerance of lingual frenectomy with regard to a local anesthesia requirement and comparison of postsurgical discomfort experienced by patients operated on with both diode and erbium:yttrium-aluminium-garnet (Er:YAG) lasers. Ankyloglossia, commonly known as tongue-tie, is a congenital oral anomaly characterized by a short lingual frenulum. A short lingual frenulum may contribute to feeding, speech, and mechanical tongue problems. Sixteen referred patients with tongue mobility complaints were included in this study. A GaAlAs laser device with a continuous wavelength of 808 nm was used in the diode group. Frenulums were incised by applying 2 W of laser power. The Er:YAG laser device with a continuous wavelength of 2940 nm was used in the Er:YAG group. Frenulums were incised by applying 1 W of laser power. The acceptability of the lingual frenectomy without local anesthesia and the degree of the postsurgical discomfort were evaluated. Although the majority of patients (six) could be operated on without local anesthesia in the Er:YAG group, all patients could not be operated on without local anesthetic agent in the diode group. There were no differences between the two groups with regard to pain, chewing, and speaking on the first or seventh day after surgery, whereas patients had more pain in the Er:YAG group than in the diode group the first 3 h after surgery. The results indicate that only the Er:YAG laser can be used for lingual frenectomy without local anesthesia, and there was no difference between the two groups regarding the degree of the postsurgical discomfort except in the first 3 h. In conclusion, these results indicate that the Er:YAG laser is more advantageous than the diode laser in minor soft-tissue surgery because it can be performed without local anesthesia and with only topical anesthesia.

Geometry modeling of single track cladding deposited by high power diode laser with rectangular beam spot

Science.gov (United States)

Liu, Huaming; Qin, Xunpeng; Huang, Song; Hu, Zeqi; Ni, Mao

2018-01-01

This paper presents an investigation on the relationship between the process parameters and geometrical characteristics of the sectional profile for the single track cladding (STC) deposited by High Power Diode Laser (HPDL) with rectangle beam spot (RBS). To obtain the geometry parameters, namely cladding width Wc and height Hc of the sectional profile, a full factorial design (FFD) of experiment was used to conduct the experiments with a total of 27. The pre-placed powder technique has been employed during laser cladding. The influence of the process parameters including laser power, powder thickness and scanning speed on the Wc and Hc was analyzed in detail. A nonlinear fitting model was used to fit the relationship between the process parameters and geometry parameters. And a circular arc was adopted to describe the geometry profile of the cross-section of STC. The above models were confirmed by all the experiments. The results indicated that the geometrical characteristics of the sectional profile of STC can be described as the circular arc, and the other geometry parameters of the sectional profile can be calculated only using Wc and Hc. Meanwhile, the Wc and Hc can be predicted through the process parameters.

A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission.

Science.gov (United States)

Lin, Gong-Ru; Chi, Yu-Chieh; Liao, Yu-Sheng; Kuo, Hao-Chung; Liao, Zhi-Wang; Wang, Hai-Lin; Lin, Gong-Cheng

2012-06-18

By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down- and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bi-directional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate transmission is less than 2 dB for all 16 channels.

Venous Lake of the Lips Treated Using Photocoagulation with High-Intensity Diode Laser

Science.gov (United States)

Galletta, Vivian C.; de Paula Eduardo, Carlos; Migliari, Dante A.

2010-01-01

Abstract Objective: To evaluate the effectiveness of photocoagulation with high-intensity diode laser in the treatment of venous lake (VL) lesions. Background Data: VL is a common vascular lesion characterized by elevated, usually dome-shaped papules, ranging in color from dark blue to dark purple, seen more frequently in elderly patients. They often occur as single lesions on the ears, face, lips, or neck. Once formed, lesions persist throughout life. Although these lesions are usually asymptomatic, they can bleed if injured. Methods: Seventeen patients (7 men and 10 women) with VL on the lip were treated using a noncontact diode laser (wavelength 808 nm, power output 2–3 W in continuous wave). Results: After only one irradiation exposure, all lesions were successfully treated. Healing was completed in approximately 2 to 3 weeks, and none of the patients experienced complications. Postoperative discomfort and scarring were not present or were minimal. Conclusion: Photocoagulation with high-intensity diode laser is an effective, bloodless procedure for the treatment of VL. PMID:19811083

Design of all solid state tunable single-mode Ti: sapphire laser for nuclear industry

International Nuclear Information System (INIS)

Lee, J.H.; Nam, S.M.; Lee, Y.J.; Lee, J.M.; Horn, Roland E.; Wendt, Klaus

1999-01-01

We designed a Ti:Sapphire laser pumped by a diode laser pumped solid state laser (DPSSL). The DPSSL was intra-cavity frequency doubled and it had 20 W output power. The Ti:Sapphire laser was designed for single longitudinal mode lasing. For single mode lasing, the laser used several solid etalons. We simulated temporal evolution of the laser pulse and single pass amplification rate of the photons in each modes from rate equations. From the result, we found that single mode lasing is viable in this cavity

Dynamics of a broad-area diode laser with lateral-mode-selected long-cavity feedback

DEFF Research Database (Denmark)

Chi, Mingjun; Petersen, Paul Michael

2014-01-01

The temporal dynamics of a broad-area diode laser with lateral-mode-selected long-cavity feedback is studied experimentally. Different dynamics are observed when different lateral modes are selected. When the feedback mirror is aligned perfectly and high-order modes are selected, in most....... When the feedback mirror is aligned non-perfectly, pulse-package oscillation is observed, for the first time to our knowledge, in a diode laser with long-cavity feedback....... of the cases, the output of the laser shows a periodic oscillation corresponding to a single roundtrip external-cavity loop, but the dynamic behavior disappears in some case; when the zero-order lateral-mode is selected, periodic oscillation corresponding to a double roundtrip external-cavity loop is observed...

Prostate volume did not affect voiding function improvements in diode laser enucleation of the prostate.

Science.gov (United States)

Yang, Stephen Shei-Dei; Hsieh, Cheng-Hsing; Chiang, I-Ni; Lin, Chia-Da; Chang, Shang-Jen

2013-03-01

We compared safety and surgical outcomes in patients with different prostate sizes treated with diode laser enucleation of the prostate. From 2008 to 2012 consecutive patients with benign prostatic obstruction undergoing diode laser prostate enucleation at our institution were enrolled for analysis. A single surgeon performed diode laser prostate enucleation with an end firing, continuous wave diode laser (980 nm). Based on preoperative prostate volume on transrectal ultrasound, patients were stratified into 2 groups, including group 1-65 with less than 60 ml and group 2-55 with 60 ml or greater. Baseline and perioperative characteristics, and postoperative surgical outcomes were compared between the 2 groups. A total of 120 men with a mean ± SD age of 70.2 ± 9.0 years were enrolled for analysis. Compared with group 1 patients, those in group 2 had larger mean total prostate volume (85.0 ± 24.6 vs 40.9 ± 10.8 ml), longer mean operative time (117.7 ± 48.2 vs 60.7 ± 25.0 minutes), higher mean retrieved prostate weight (37.3 ± 16.1 vs 12.5 ± 7.3 gm) and a higher mean tissue retrieval ratio (74.4% ± 22.2% vs 58.8% ± 23.2%, p laser energy, voiding function improvements and surgical complication rates of diode laser prostate enucleation were comparable in patients with a larger vs smaller prostate. Copyright © 2013 American Urological Association Education and Research, Inc. Published by Elsevier Inc. All rights reserved.

High-power laser diodes with high polarization purity

Science.gov (United States)

Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

2017-02-01

Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

Efficient second harmonics generation of a laser-diode-pumped Nd:YAG laser and its applications. Laser diode reiki Nd:YAG laser no kokoritsu daini kochoha hassei to sono oyo

Energy Technology Data Exchange (ETDEWEB)

Kubota, S.; Oka, M. (Sony Corp., Tokyo (Japan))

1991-08-10

Stabilization of the second harmonics in a laser-diode-pumped Nd:YAG laser and its application are described. The laser is a quantum noise limiting laser, in which a mode competing noise is generated from an interaction between the laser medium Nd:YAG and the type II nonlinear optical crystal KTiOPO{sub 4} when generating a second harmonics in the resonator. However, the quantum noise limiting second harmonics was obtained by means of inserting (1/4) wave length plate in the resonator to release the bond between two intersecting inherent polarization modes. This stabilized green laser is of a single lateral mode is nearly free of aberration. Therefore, an optical disc prototype having three times as much of the currently used density was made using an objective lens having high number of openings to collect lights, which was verified capable of regeneration at a high signal to noise ratio. In addition, higher output is possible by means of parallelizing the excitation, and high output is realized from edge excitation at a fiber bundle. 18 refs., 3 figs.

1-kilowatt CW all-fiber laser oscillator pumped with wavelength-beam-combined diode stacks.

Science.gov (United States)

Xiao, Y; Brunet, F; Kanskar, M; Faucher, M; Wetter, A; Holehouse, N

2012-01-30

We have demonstrated a monolithic cladding-pumped ytterbium-doped single all-fiber laser oscillator generating 1 kW of CW signal power at 1080 nm with 71% slope efficiency and near diffraction-limited beam quality. Fiber components were highly integrated on "spliceless" passive fibers to promote laser efficiency and alleviate non-linear effects. The laser was pumped through a 7:1 pump combiner with seven 200-W 91x nm fiber-pigtailed wavelength-beam-combined diode-stack modules. The signal power of such a single all-fiber laser oscillator showed no evidence of roll-over, and the highest output was limited only by available pump power.

Theoretical and experimental aspects of laser cutting with a direct diode laser

Science.gov (United States)

Costa Rodrigues, G.; Pencinovsky, J.; Cuypers, M.; Duflou, J. R.

2014-10-01

Recent developments in beam coupling techniques have made it possible to scale up the power of diode lasers with a laser beam quality suitable for laser cutting of metal sheets. In this paper a prototype of a Direct Diode Laser (DDL) source (BPP of 22 mm-mrad) is analyzed in terms of efficiency and cut performance and compared with two established technologies, CO2 and fiber lasers. An analytical model based on absorption calculations is used to predict the performance of the studied laser source with a good agreement with experimental results. Furthermore results of fusion cutting of stainless steel and aluminium alloys as well as oxygen cutting of structural steel are presented, demonstrating that industrial relevant cutting speeds with high cutting quality can now be achieved with DDL.

Crystal growth, spectral and laser properties of Nd:LSAT single crystal

Science.gov (United States)

Hu, P. C.; Yin, J. G.; Zhao, C. C.; Gong, J.; He, X. M.; Zhang, L. H.; Liang, X. Y.; Hang, Y.

2011-10-01

Nd:(La, Sr)(Al, Ta)O3 (Nd:LSAT) crystal was grown by the Czochralski method. The absorption and fluorescence spectra of Nd:LSAT crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LSAT crystal was demonstrated. The result of diode-pumped laser operation of Nd:LSAT crystal single crystal is reported for what is to our knowledge the first time. The maximum output power at 1064 nm was obtained to be 165 mW under the incident pump power of 3 W, with the slope efficiency 10.9%.

700 W blue fiber-coupled diode-laser emitting at 450 nm

Science.gov (United States)

Balck, A.; Baumann, M.; Malchus, J.; Chacko, R. V.; Marfels, S.; Witte, U.; Dinakaran, D.; Ocylok, S.; Weinbach, M.; Bachert, C.; Kösters, A.; Krause, V.; König, H.; Lell, A.; Stojetz, B.; Löffler, A.; Strauss, U.

2018-02-01

A high-power blue laser source was long-awaited for processing materials with low absorption in the near infrared (NIR) spectral range like copper or gold. Due to the huge progress of GaN-based semiconductors, the performance of blue diode-lasers has made a major step forward recently. With the availability of unprecedented power levels at cw-operating blue diode-lasers emitting at 450 nm, it was possible to set up a high-power diode-laser in the blue spectral range to address these conventional laser applications and probably beyond that to establish completely new utilizations for lasers. Within the scope of the research project "BlauLas", funded within the German photonic initiative "EFFILAS" [8] by the German Federal Ministry of Education and Research (BMBF), Laserline in cooperation with OSRAM aims to realize a cw fiber-coupled diode-laser exceeding 1 kW blue laser power. In this paper the conceptual design and experimental results of a 700 W blue fiber-coupled diode-laser are presented. Initially a close look had to be taken on the mounting techniques of the semiconductors to serve the requirements of the GaN laser diodes. Early samples were used for extensive long term tests to investigate degradation processes. With first functional laser-modules we set up fiber-coupled laser-systems for further testing. Besides adaption of well-known optical concepts a main task within the development of the laser system was the selection and examination of suitable materials and assembling in order to minimize degradation and reach adequate lifetimes. We realized R&D blue lasersystems with lifetimes above 5,000 h, which enable first application experiments on processing of various materials as well as experiments on conversion to white-light.

Experimental diode laser-assisted microvascular anastomosis.

Science.gov (United States)

Reali, U M; Gelli, R; Giannotti, V; Gori, F; Pratesi, R; Pini, R

1993-05-01

An experimental study to evaluate a diode-laser approach to microvascular end-to-end anastomoses is reported. Studies were carried out on the femoral arteries and veins of Wistar rats, and effective welding of vessel tissue was obtained at low laser power, by enhancing laser absorption with indocyanine green (Cardio-green) solution. The histologic and surgical effects of this laser technique were examined and compared with those of conventional microvascular sutured anastomoses.

Blue laser diode (450 nm) systems for welding copper

Science.gov (United States)

Silva Sa, M.; Finuf, M.; Fritz, R.; Tucker, J.; Pelaprat, J.-M.; Zediker, M. S.

2018-02-01

This paper will discuss the development of high power blue laser systems for industrial applications. The key development enabling high power blue laser systems is the emergence of high power, high brightness laser diodes at 450 nm. These devices have a high individual brightness rivaling their IR counterparts and they have the potential to exceed their performance and price barriers. They also have a very high To resulting in a 0.04 nm/°C wavelength shift. They have a very stable lateral far-field profile which can be combined with other diodes to achieve a superior brightness. This paper will report on the characteristics of the blue laser diodes, their integration into a modular laser system suitable for scaling the output power to the 1 kW level and beyond. Test results will be presented for welding of copper with power levels ranging from 150 Watts to 600 Watts

Computer-Assisted Experiments with a Laser Diode

Science.gov (United States)

Kraftmakher, Yaakov

2011-01-01

A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The "h/e" ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a…

Ultra-Fast All-Optical Self-Aware Protection Switching Based on a Bistable Laser Diode

DEFF Research Database (Denmark)

An, Yi; Vukovic, Dragana; Lorences Riesgo, Abel

2014-01-01

We propose a novel concept of all-optical protection switching with link failure automatic awareness based on AOWFF. The scheme is experimentally demonstrated using a single MG-Y laser diode with a record switching time ~200 ps....

Infrared diode laser spectroscopy

Czech Academy of Sciences Publication Activity Database

Civiš, Svatopluk; Cihelka, Jaroslav; Matulková, Irena

2010-01-01

Roč. 18, č. 4 (2010), s. 408-420 ISSN 1230-3402 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503 Keywords : FTIR spectroscopy * absorption spectroscopy * laser diodes Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.027, year: 2010

High-power Al-free active region (λ= 852nm) DFB laser diodes for atomic clocks and interferometry applications

Science.gov (United States)

Ligeret, V.; Vermersch, F.-J.; Bansropun, S.; Lecomte, M.; Calligaro, M.; Parillaud, O.; Krakowski, M.

2017-11-01

Atomic clocks will be used in the future European positioning system Galileo. Among them, the optically pumped clocks provide a better alternative with comparable accuracy for a more compact system. For these systems, diode lasers emitting at 852nm are strategic components. The laser in a conventional bench for atomic clocks presents disadvantages for spatial applications. A better approach would be to realise a system based on a distributed-feedback laser (DFB). We have developed the technological foundations of such lasers operating at 852nm. These include an Al free active region, a single spatial mode ridge waveguide and a DFB structure. The device is a separate confinement heterostructure with a GaInP large optical cavity and a single compressive strained GaInAsP quantum well. The broad area laser diodes are characterised by low internal losses (value of less than 2MHz.

Diffraction-limited 577 nm true-yellow laser by frequency doubling of a tapered diode laser

Science.gov (United States)

Christensen, Mathias; Vilera, Mariafernanda; Noordegraaf, Danny; Hansen, Anders K.; Buß, Thomas; Jensen, Ole B.; Skovgaard, Peter M. W.

2018-02-01

A wide range of laser medical treatments are based on coagulation of blood by absorption of the laser radiation. It has, therefore, always been a goal of these treatments to maximize the ratio of absorption in the blood to that in the surrounding tissue. For this purpose lasers at 577 nm are ideal since this wavelength is at the peak of the absorption in oxygenated hemoglobin. Furthermore, 577 nm has a lower absorption in melanin when compared to green wavelengths (515 - 532 nm), giving it an advantage when treating at greater penetration depth. Here we present a laser system based on frequency doubling of an 1154 nm Distributed Bragg Reflector (DBR) tapered diode laser, emitting 1.1 W of single frequency and diffraction limited yellow light at 577 nm, corresponding to a conversion efficiency of 30.5%. The frequency doubling is performed in a single pass configuration using a cascade of two bulk non-linear crystals. The system is power stabilized over 10 hours with a standard deviation of 0.13% and the relative intensity noise is measured to be 0.064 % rms.

Highly optimized tunable Er3+-doped single longitudinal mode fiber ring laser, experiment and model

DEFF Research Database (Denmark)

Poulsen, Christian; Sejka, Milan

1993-01-01

A continuous wave (CW) tunable diode-pumped Er3+-doped fiber ring laser, pumped by diode laser at wavelengths around 1480 nm, is discussed. Wavelength tuning range of 42 nm, maximum slope efficiency of 48% and output power of 14.4 mW have been achieved. Single longitudinal mode lasing...... with a linewidth of 6 kHz has been measured. A fast model of erbium-doped fiber laser was developed and used to optimize output parameters of the laser...

Ultra-narrow band diode lasers with arbitrary pulse shape modulation (Conference Presentation)

Science.gov (United States)

Ryasnyanskiy, Aleksandr I.; Smirnov, Vadim; Mokhun, Oleksiy; Glebov, Alexei L.; Glebov, Leon B.

2017-03-01

Wideband emission spectra of laser diode bars (several nanometers) can be largely narrowed by the usage of thick volume Bragg gratings (VBGs) recorded in photo-thermo-refractive glass. Such narrowband systems, with GHz-wide emission spectra, found broad applications for Diode Pumped Alkali vapor Lasers, optically pumped rare gas metastable lasers, Spin Exchange Optical Pumping, atom cooling, etc. Although the majority of current applications of narrow line diode lasers require CW operation, there are a variety of fields where operation in a different pulse mode regime is necessary. Commercial electric pulse generators can provide arbitrary current pulse profiles (sinusoidal, rectangular, triangular and their combinations). The pulse duration and repetition rate however, have an influence on the laser diode temperature, and therefore, the emitting wavelength. Thus, a detailed analysis is needed to understand the correspondence between the optical pulse profiles from a diode laser and the current pulse profiles; how the pulse profile and duty cycle affects the laser performance (e.g. the wavelength stability, signal to noise ratio, power stability etc.). We present the results of detailed studies of the narrowband laser diode performance operating in different temporal regimes with arbitrary pulse profiles. The developed narrowband (16 pm) tunable laser systems at 795 nm are capable of operating in different pulse regimes while keeping the linewidth, wavelength, and signal-to-noise ratio (>20 dB) similar to the corresponding CW modules.

Method and system for homogenizing diode laser pump arrays

Science.gov (United States)

Bayramian, Andy J

2013-10-01

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

CO2 and diode laser welding of AZ31 magnesium alloy

International Nuclear Information System (INIS)

Zhu Jinhong; Li Lin; Liu Zhu

2005-01-01

Magnesium alloys are being increasingly used in automotive and aerospace structures. Laser welding is an important joining method in such applications. There are several kinds of industrial lasers available at present, including the conventional CO 2 and Nd:YAG lasers as well as recently available high power diode lasers. A 1.5 kW diode laser and a 2 kW CO 2 laser are used in the present study for the welding of AZ31 alloys. It is found that different welding modes exist, i.e., keyhole welding with the CO 2 laser and conduction welding with both the CO 2 and the diode lasers. This paper characterizes welds in both welding modes. The effect of beam spot size on the weld quality is analyzed. The laser processing parameters are optimized to obtain welds with minimum defects

Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry.

Science.gov (United States)

Yung, Yeni P; Wickramasinghe, Raveendra; Vaikkinen, Anu; Kauppila, Tiina J; Veryovkin, Igor V; Hanley, Luke

2017-07-18

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples.

High-power non linear frequency converted laser diodes

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Andersen, Peter E.; Hansen, Anders Kragh

2015-01-01

We present different methods of generating light in the blue-green spectral range by nonlinear frequency conversion of tapered diode lasers achieving state-of-the-art power levels. In the blue spectral range, we show results using single-pass second harmonic generation (SHG) as well as cavity enh...... enhanced sum frequency generation (SFG) with watt-level output powers. SHG and SFG are also demonstrated in the green spectral range as a viable method to generate up to 4 W output power with high efficiency using different configurations....

Comparative Study of Diode Laser Versus Neodymium-Yttrium Aluminum: Garnet Laser Versus Intense Pulsed Light for the Treatment of Hirsutism.

Science.gov (United States)

Puri, Neerja

2015-01-01

Lasers are widely used for the treatment of hirsutism. But the choice of the right laser for the right skin type is very important. Before starting with laser therapy, it is important to assess the skin type, the fluence, the pulse duration and the type of laser to be used. To compare the efficacy and side effects of Diode laser, Neodymium-yttrium aluminum - garnet (Nd: YAG) laser and intense pulsed light (IPL) on 30 female patients of hirsutism. Thirty female patients with hirsutism were selected for a randomised controlled study. The patients were divided into three groups of 10 patients each. In group I patients diode laser was used, in group II patients long pulsed Nd: YAG laser was used and in group III, IPL was used. The patients were evaluated and result graded according to a 4-point scale as excellent, >75% reduction; good, 50-75% reduction; fair; 25-50% reduction; and poor, diode laser group, followed by 35% hair reduction in the Nd: Yag laser group and 10% hair reduction in the IPL group. The percentage of hair reduction after four sessions of treatment was maximum (64%) in the diode laser group, followed by 62% hair reduction in the Nd: Yag laser group and 48% hair reduction in the IPL group. The percentage of hair reduction after eight sessions of treatment was maximum (92%) in the diode laser group, followed by 90% hair reduction in the Nd: YAG group and 70% hair reduction in the IPL group. To conclude for the Indian skin with dark hairs, the diode laser still stands the test of time. But, since the diode laser has a narrow margin of safety, proper pre and post-procedure cooling is recommended. Although, the side effects of Nd: YAG laser are less as compared to the diode laser, it is less efficacious as compared to the diode laser.

High brightness diode-pumped organic solid-state laser

Energy Technology Data Exchange (ETDEWEB)

Zhao, Zhuang; Mhibik, Oussama; Nafa, Malik; Chénais, Sébastien; Forget, Sébastien, E-mail: sebastien.forget@univ-paris13.fr [Université Paris 13, Sorbonne Paris Cité, Laboratoire de Physique des Lasers, F-93430, Villetaneuse (France); CNRS, UMR 7538, LPL, F-93430, Villetaneuse (France)

2015-02-02

High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.

Management of gingival hyperpigmentation by semiconductor diode laser

Directory of Open Access Journals (Sweden)

Geeti Gupta

2011-01-01

Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

Diode-Pumped Thulium (Tm)/Holmium (Ho) Composite Fiber 2.1-Micrometers Laser

Science.gov (United States)

2015-09-01

Schematic of the 800-nm diode pumped Tm/Ho composite fiber laser 8 Under quasi-continuous wave (Q- CW ) pumping conditions of 1-ms duration and a...Fig. 9 (Top) Schematic of the 800-nm diode -pumped Tm/Ho composite fiber laser with outcoupler. (Left) Q- CW laser performance of the Tm/Ho composite...ARL-TR-7452 ● SEP 2015 US Army Research Laboratory Diode -Pumped Thulium (Tm)/Holmium (Ho) Composite Fiber 2.1-μm Laser by G

Quasi-CW 110 kW AlGaAs laser diode array module for inertial fusion energy laser driver

International Nuclear Information System (INIS)

Kawashima, Toshiyuki

2001-01-01

We have successfully demonstrated a large aperture 803 nm AlGaAs diode laser module as a pump source for a 1053 nm, 10 J output Nd: glass slab laser amplifier for diode-pumped solid-state laser (DPSSL) fusion driver. Detailed performance results of the laser diode module are presented, including bar package and stack configuration, and their thermal design and analysis. A sufficiently low thermal impedance of the stack was realized by combining backplane liquid cooling configuration with modular bar package architecture. Total peak power of 110 kW and electrical to optical conversion efficiently of 46% were obtained from the module consisting of a total of 1000 laser diode bars. A peak intensity of 2.6 kW/cm 2 was accomplished across an emitting area of 418 mm x 10 mm. Currently, this laser diode array module with a large two-dimensional aperture is, to our knowledge, the only operational pump source for the high output energy DPSSL. (author)

Diode laser spectroscopy of oxygen electronic band at 760 nm

International Nuclear Information System (INIS)

Lucchesini, A.; De Rosa, M.; Gozzini, S.

1998-01-01

Collisional broadening and shift coefficients have been obtained by analyzing the line shapes of oxygen absorptions in the 760 nm electronic band. By using a diode laser spectrometer with commercially available etherostructure Al x Ga 1-x As diode lasers operating in 'free-running mode', line shape parameters have been collected at room temperature by varying the gas pressure. A systematic study has been carried on seven absorption lines by scanning the diode laser emission wavelength around the gas resonances. The weak absorption lines have been detected by using the wavelength modulation (WM) spectroscopy technique with second-harmonic detection

Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

DEFF Research Database (Denmark)

Liu, Junqiu; Brasch, Victor; Pfeiffer, Martin H. P.

2016-01-01

Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method using cascaded frequency agile diode lasers......, which allows us to extend the measurement bandwidth to 37.4 THz (1355-1630 nm) at megahertz resolution with scanning speeds above 1 THz/s. It is demonstrated as a useful tool to characterize a broadband spectrum for molecular spectroscopy, and in particular it enables us to characterize the dispersion...

Development of diode-pumped medical solid-state lasers

International Nuclear Information System (INIS)

Kim, Cheol Jung; Kim, Min Suk

2000-09-01

Two thirds of human body consists of water and the absorption of laser by water is an important factor in medical laser treatment. Er medical lasers have been used in the dermatology, ophthalmology and dental treatments due to its highest absorption by water. However, 2.9 um Er laser can not be transmitted through an optical fiber. On the other hand, Tm laser can be transmitted through an fiber and also has very high absorption by water. Therefore, Tm lasers are used in ophthalmology and heart treatment wherein the fiber delivery is very important for the treatment. Until now, mainly lamp-pumped solid-state lasers have been used in medical treatments, but the lamp-pumped solid-state lasers are being replaced with the diode-pumped solid-state lasers because the diode-pumped solid-state lasers are more compact and much easier to maintain. Following this trend, end-pumped Er and side-pumped Tm lasers have been developed and the output power of 1 W was obtained for Er and Tm respectively

Development of diode-pumped medical solid-state lasers

Energy Technology Data Exchange (ETDEWEB)

Kim, Cheol Jung; Kim, Min Suk

2000-09-01

Two thirds of human body consists of water and the absorption of laser by water is an important factor in medical laser treatment. Er medical lasers have been used in the dermatology, ophthalmology and dental treatments due to its highest absorption by water. However, 2.9 um Er laser can not be transmitted through an optical fiber. On the other hand, Tm laser can be transmitted through an fiber and also has very high absorption by water. Therefore, Tm lasers are used in ophthalmology and heart treatment wherein the fiber delivery is very important for the treatment. Until now, mainly lamp-pumped solid-state lasers have been used in medical treatments, but the lamp-pumped solid-state lasers are being replaced with the diode-pumped solid-state lasers because the diode-pumped solid-state lasers are more compact and much easier to maintain. Following this trend, end-pumped Er and side-pumped Tm lasers have been developed and the output power of 1 W was obtained for Er and Tm respectively.

Efficient high power operation of erbium 3 µm fibre laser diode-pumped at 975 nm

NARCIS (Netherlands)

Jackson, S.D.; King, T.A.; Pollnau, Markus

2000-01-01

Efficient CW operation of a 2.71 um Er,Pr:ZBLAN double-clad fibre laser pumped with a single diode laser operating at a wavelength of 975 nm is described. A maximum output power of 0.5 W and a slope efficiency of 25% (with respect to the launched pump power) were obtained. Threshold pump powers of <

Pump polarization insensitive and efficient laser-diode pumped Yb:KYW ultrafast oscillator.

Science.gov (United States)

Wang, Sha; Wang, Yan-Biao; Feng, Guo-Ying; Zhou, Shou-Huan

2016-02-01

We theoretically and experimentally report and evaluate a novel split laser-diode (LD) double-end pumped Yb:KYW ultrafast oscillator aimed at improving the performance of an ultrafast laser. Compared to a conventional unpolarized single-LD end-pumped ultrafast laser system, we improve the laser performance such as absorption efficiency, slope efficiency, cw mode-locking threshold, and output power by this new structure LD-pumped Yb:KYW ultrafast laser. Experiments were carried out with a 1 W output fiber-coupled LD. Experimental results show that the absorption increases from 38.7% to 48.4%, laser slope efficiency increases from 18.3% to 24.2%, cw mode-locking threshold decreases 12.7% from 630 to 550 mW in cw mode-locking threshold, and maximum output-power increases 28.5% from 158.4 to 221.5 mW when we switch the pump scheme from an unpolarized single-end pumping structure to a split LD double-end pumping structure.

GreenLight laser vs diode laser vaporization of the prostate: 3-year results of a prospective nonrandomized study.

Science.gov (United States)

Guo, Sanwei; Müller, Georg; Bonkat, Gernot; Püschel, Heike; Gasser, Thomas; Bachmann, Alexander; Rieken, Malte

2015-04-01

Laser vaporization of the prostate is one of the alternatives to transurethral resection of the prostate. Short-term studies report a comparable outcome after laser vaporization with the 532 nm 120-W GreenLight high-performance system (HPS) laser and the 980 nm 200 W high-intensity diode (diode) laser. In this study, we analyzed the intermediate-term results of both techniques. From January 2007 to January 2008, 112 consecutive patients with symptomatic benign prostate enlargement were nonrandomly assigned to treatment with the GreenLight laser or the diode laser. Perioperative parameters, postoperative functional outcome, complications, and the reoperation rate at 3 years were analyzed. Improvement of voiding symptoms (International Prostate Symptom Score, quality-of-life) and micturition parameters (maximum flow rate, postvoid residual volume) showed no significant difference between the HPS group and the diode group. A significantly higher reoperation rate was observed in the diode group in comparison to the HPS group (37.5% vs 8.9%, p=0.0003) due to obstructive necrotic tissue (16.1% vs 0%, p=0.0018), bladder neck stricture (16.1% vs 1.8%, p=0.008), and persisting or recurrent adenoma (5.4% vs 7.1%, p=0.70), respectively. Both lasers lead to comparable improvement of voiding parameters and micturition symptoms. Treatment with the 200 W diode laser led to a significantly higher reoperation rate, which might be attributed to a higher degree of coagulation necrosis. Thus, a careful clinical application of this diode laser type is warranted.

Development of a Laser Induced Fluorescence (LIF) System with a Tunable Diode Laser

International Nuclear Information System (INIS)

Woo, Hyun Jong; Do, Jeong Jun; You, Hyun Jong; Choi, Geun Sik; Lee, Myoung Jae; Chung, Kyu Sun

2005-01-01

The Laser Induced Fluorescence (LIF) is known as one of the most powerful techniques for measurements of ion velocity distribution function (IVDF) and ion temperature by means of Doppler broadening and Doppler shift. The dye lasers are generally used for LIF system with 611.66 nm (in vac.) for Ar ion, the low power diode laser was also proposed by Severn et al with the wavelength of 664.55 nm and 668.61 nm (in vac.) for Ar ion. Although the diode laser has the disadvantages of low power and small tuning range, it can be used for LIF system at the low temperature plasmas. A tunable diode laser with 668.614 nm of center wavelength and 10 GHz mode hop free tuning region has been used for our LIF system and it can be measured the ion temperature is up to 1 eV. The ion temperature and velocity distribution function have been measured with LaB6 plasma source, which is about 0.23 eV with Ar gas and 2.2 mTorr working pressure

Interband type-II miniband-to-bound state diode lasers for the midinfrared

International Nuclear Information System (INIS)

Mermelstein, C.; Schmitz, J.; Kiefer, R.; Walther, M.; Wagner, J.

2004-01-01

A design for midinfrared diode lasers based on interband type-II miniband-to-bound state transitions is proposed and has been demonstrated experimentally. Type-II miniband-to-bound state laser structures emitting at 3.25 μm with active regions consisting of 5 and 10 W periods were grown by solid-source molecular-beam epitaxy and processed into ridge waveguide lasers. Substrate-side down mounted devices with a 10 period active region and uncoated facets could be operated in continuous-wave (cw) mode up to 185 K and as high as 260 K in pulsed mode. A high characteristic temperature of 100 K has been achieved for heat-sink temperatures below 140 K, decreasing to 33 K for the 140 to 185 K interval. At 110 K, a 5 period laser structure exhibited a threshold current density of 177 A/cm 2 and a slope efficiency of 61 mW/A. Single-ended output powers of 144 mW in cw mode and exceeding 330 mW in pulsed operation were obtained for a substrate-side down mounted 5 period diode laser with high-reflection/antireflection coated mirror facets, operated at 110 K

Laser lipolysis: skin tightening in lipoplasty using a diode laser.

Science.gov (United States)

Wolfenson, Moisés; Hochman, Bernardo; Ferreira, Lydia Massako

2015-05-01

New devices have been developed for surgical repair of deformities caused by localized fat deposits associated with skin laxity. The use of these devices requires the adoption of safety parameters. The aim of this study was to investigate skin tightening by laser lipolysis, using a dual-wavelength diode laser. This prospective, cross-sectional study was conducted between June of 2008 and July of 2010 with 41 consecutive patients who underwent laser lipolysis to correct contour deformities. Laser lipolysis was performed with a diode laser operating at two wavelengths (924 and 975 nm) controlled independently, and using three different tip lengths, allowing treatment of small, medium, and large areas of adipose tissue. The procedure was performed under local anesthesia in a surgical setting. To calculate the optimal cumulative energy, a total energy dose of 5 kJ/10 × 10-cm skin area was used as a safety parameter to prevent treatment complications. The circumferences of body regions were measured preoperatively, immediately after surgery, and 90 days later. Measurements were compared using the Wilcoxon test at a significance level of 0.05 (p Laser lipolysis results in progressive skin tightening over time. Therapeutic, IV.

Diode-pumped solid state laser for inertial fusion energy

International Nuclear Information System (INIS)

Payne, S.A.; Krupke, W.F.; Orth, C.D.

1994-11-01

The authors evaluate the prospect for development of a diode-pumped solid-state-laser driver in an inertial fusion energy power plant. Using a computer code, they predict that their 1 GWe design will offer electricity at 8.6 cents/kW · hr with the laser operating at 8.6% efficiency and the recycled power level at 31%. The results of their initial subscale experimental testbed of a diode-pumped solid state laser are encouraging, demonstrating good efficiencies and robustness

Determination of QW laser diode degradation based on the emission spectrum

Directory of Open Access Journals (Sweden)

Bliznyuk Vladimir

2017-01-01

Full Text Available The possibility of laser diodes degradation control by monitoring of their spectrum is shown. For red and infra-red laser diodes, the time dependence of the radiation spectrum width was obtained.

Diode-laser-illuminated automotive lamp systems

Science.gov (United States)

Marinelli, Michael A.; Remillard, Jeffrey T.

1998-05-01

We have utilized the high brightness of state-of-the-art diode laser sources, and a variety of emerging optical technologies to develop a new class of thin, uniquely styled automotive brake and signal lamps. Using optics based on thin (5 mm) plastic sheets, these lamps provide appearance and functional advantages not attainable with traditional automotive lighting systems. The light is coupled into the sheets using a 1 mm diameter glass fiber, and manipulated using refraction and reflection from edges, surfaces, and shaped cut-outs. Light can be extracted with an efficiency of approximately 50% and formed into a luminance distribution that meets the Society of Automotive Engineers (SAE) photometric requirements. Prototype lamps using these optics have been constructed and are less than one inch in thickness. Thin lamps reduce sheet metal costs, complexity, material usage, weight, and allow for increased trunk volume. In addition, these optics enhance lamp design flexibility. When the lamps are not energized, they can appear body colored, and when lighted, the brightness distribution across the lamp can be uniform or structured. A diode laser based brake lamp consumes seven times less electrical power than one using an incandescent source and has instant on capability. Also, diode lasers have the potential to be 10-year/150,000 mile light sources.

Precision Spectroscopy, Diode Lasers, and Optical Frequency Measurement Technology

Science.gov (United States)

Hollberg, Leo (Editor); Fox, Richard (Editor); Waltman, Steve (Editor); Robinson, Hugh

1998-01-01

This compilation is a selected set of reprints from the Optical Frequency Measurement Group of the Time and Frequency Division of the National Institute of Standards and Technology, and consists of work published between 1987 and 1997. The two main programs represented here are (1) development of tunable diode-laser technology for scientific applications and precision measurements, and (2) research toward the goal of realizing optical-frequency measurements and synthesis. The papers are organized chronologically in five, somewhat arbitrarily chosen categories: Diode Laser Technology, Tunable Laser Systems, Laser Spectroscopy, Optical Synthesis and Extended Wavelength Coverage, and Multi-Photon Interactions and Optical Coherences.

Active Stabilization of a Diode Laser Injection Lock

OpenAIRE

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-01-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

Diode Laser Velocity Measurements by Modulated Filtered Rayleigh Scattering

Science.gov (United States)

Mach, J. J.; Varghese, P. L.; Jagodzinski, J. J.

1999-01-01

The ability of solid-state lasers to be tuned in operating frequency at MHz rates by input current modulation, while maintaining a relatively narrow line-width, has made them useful for spectroscopic measurements. Their other advantages include low cost, reliability, durability, compact size, and modest power requirements, making them a good choice for a laser source in micro-gravity experiments in drop-towers and in flight. For their size, they are also very bright. In a filtered Rayleigh scattering (FRS) experiment, a diode laser can be used to scan across an atomic or molecular absorption line, generating large changes in transmission at the resonances for very small changes in frequency. The hyperfine structure components of atomic lines of alkali metal vapors are closely spaced and very strong, which makes such atomic filters excellent candidates for sensitive Doppler shift detection and therefore for high-resolution velocimetry. In the work we describe here we use a Rubidium vapor filter, and work with the strong D(sub 2) transitions at 780 nm that are conveniently accessed by near infrared diode lasers. The low power output of infrared laser diodes is their primary drawback relative to other laser systems commonly used for velocimetry. However, the capability to modulate the laser frequency rapidly and continuously helps mitigate this. Using modulation spectroscopy and a heterodyne detection scheme with a lock-in amplifier, one can extract sub-microvolt signals occurring at a specific frequency from a background that is orders of magnitude stronger. The diode laser modulation is simply achieved by adding a small current modulation to the laser bias current. It may also be swept repetitively in wavelength using an additional lower frequency current ramp.

Role of noise in the diode-laser spectroscopy of the spectral line profile

International Nuclear Information System (INIS)

Nadezhdinskii, Aleksandr I; Plotnichenko, V V; Ponurovskii, Ya Ya; Spiridonov, Maksim V

2000-01-01

Questions concerning precise measurements of the spectral-line-profile parameters by diode-laser spectroscopic methods were examined. The instrumental function of a distributed-feedback diode laser (λ =1.53 μm), consisting of the additive contributions of the noise due to spontaneous emission, frequency fluctuations, and intensity fluctuations, was investigated. An analytical formula was obtained for the spectrum of the diode-laser field formed by frequency fluctuations. The spectral density g 0 of the frequency fluctuations, determining the width of the central part of the emission line profile of a diode laser, was found by two independent methods (by fitting to a Doppler-broadened absorption line profile and by finding the intensity of the residual radiation and the saturated-absorption line width). The parameters Ω and Γ of the spectral density of the frequency fluctuations, coupled to the relaxation oscillations and determining the wing of the diode-laser emission line profile, were determined experimentally. By taking into account the instrumental function of the diode laser, involving successive convolution with the recorded emission spectra, it was possible to reproduce correctly the spectral line profile and to solve accurately the problem of the 'optical zero'. The role of the correlation between the intensity noise and the diode-laser frequency was considered. (laser applications and other topics in quantum electronics)

Diode-pumped two micron solid-state lasers

International Nuclear Information System (INIS)

Elder, I.F.

1997-01-01

This thesis presents an investigation of diode-pumped two micron solid-state lasers, concentrating on a comparison of the cw room temperature operation of Tm:YAP, Tm,Ho:YAP and Tm,Ho:YLF. Dopant concentrations in YAP were 4.2% thulium and 0.28% holmium; in YLF they were 6% thulium and 0.4% holmium. Thermal modelling was carried out in order to provide an insight into the thermal lensing and population distributions in these materials. Laser operation was achieved utilising an end-pumping geometry with a simple two mirror standing wave resonator. The pump source for these experiments was a 3 W laser diode. Maximum output power was achieved with Tm:YAP, generating 730 mW of laser output, representing 42% conversion efficiency in terms of absorbed pump power. Upper bounds on the conversion efficiency of Tm,Ho:YAP and Tm,Ho:YLF laser crystal of 14% and 30% were obtained, with corresponding output powers of 270 and 660 mW. In all three cases, the output beam was TEM 00 in nature. Visible upconversion fluorescence bands in the green and red were identified in Tm,Ho:YAP and Tm,Ho:YLF, with additional blue emission from the latter, all assigned to transitions on holmium. The principal upconversion mechanisms in these materials all involved the holmium first excited state. Upconversion in Tm:YAP was negligible. The spectral output of Tm:YAP consisted of a comb of lines in the range 1.965 to 2.020 μm. For both the double-doped crystals, the laser output was multilongitudinal mode on a single transition, wavelength 2.120 μm in YAP, 2.065 μm in YLF. In the time domain the output of Tm:YAP was dominated by large amplitude spiking, unlike both of the double-doped laser crystals. The long lifetime of the thulium upper laser level (4.4 ms) provided very weak damping of the spiking. Excitation sharing between thulium and holmium, with a measured characteristic lifetime in YAP of 11.9 μs and YLF of 14.8 μs, provided strong damping of any spiking behaviour. (author)

AlGaN-based laser diodes for the short-wavelength ultraviolet region

International Nuclear Information System (INIS)

Yoshida, Harumasa; Kuwabara, Masakazu; Yamashita, Yoji; Takagi, Yasufumi; Uchiyama, Kazuya; Kan, Hirofumi

2009-01-01

We have demonstrated the room-temperature operation of GaN/AlGaN and indium-free AlGaN multiple-quantum-well (MQW) laser diodes under the pulsed-current mode. We have successfully grown low-dislocation-density AlGaN films with AlN mole fractions of 20 and 30% on sapphire substrates using the hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. GaN/AlGaN and AlGaN MQW laser diodes have been fabricated on the low-dislocation-density Al 0.2 Ga 0.8 N and Al 0.3 Ga 0.7 N films, respectively. The GaN/AlGaN MQW laser diodes lased at a peak wavelength ranging between 359.6 and 354.4 nm. A threshold current density of 8 kA cm -2 , an output power as high as 80 mW and a differential external quantum efficiency (DEQE) of 17.4% have been achieved. The AlGaN MQW laser diodes lased at a peak wavelength down to 336.0 nm far beyond the GaN band gap. For the GaN/AlGaN MQW laser diodes, the modal gain coefficient and the optical internal loss are estimated to be 4.7±0.6 cm kA -1 and 10.6±2.7 cm -1 , respectively. We have observed that the characteristic temperature T 0 ranges from 132 to 89 K and DEQE shows an almost stable tendency with increase of temperature. A temperature coefficient of 0.049 nm K -1 is also found for the GaN/AlGaN MQW laser diode. The results for the AlGaN-based laser diodes grown on high-quality AlGaN films presented here will be essential for the future development of laser diodes emitting much shorter wavelengths.

Narrow-line external cavity diode laser micro-packaging in the NIR and MIR spectral range

Science.gov (United States)

Jiménez, A.; Milde, T.; Staacke, N.; Aßmann, C.; Carpintero, G.; Sacher, J.

2017-07-01

Narrow-linewidth tunable diode lasers are an important tool for spectroscopic instrumentation. Conventional external cavity diode lasers offer high output power and narrow linewidth. However, most external cavity diode lasers are designed as laboratory instrument and do not allow portability. In comparison, other commonly used lasers, like distributed feedback lasers (DFB) that are capable of driving a handheld device, are limited in power and show linewidths which are not sufficiently narrow for certain applications. We present new miniaturized types of tunable external cavity diode laser which overcome the drawbacks of conventional external cavity diode lasers and which preserve the advantages of this laser concept. Three different configurations are discussed in this article. The three types of miniaturized external cavity diode laser systems achieve power values of more than 50 mW within the 1.4 μm water vapor absorption band with excellent side-mode suppression and linewidth below 100 kHz. Typical features outstand with respect to other type of laser systems which are of extended use such as DFB laser diodes. The higher output power and the lower linewidth will enable a higher sensitivity and resolution for a wide range of applications.

Quantitative Detection of Combustion Species using Ultra-Violet Diode Lasers

Science.gov (United States)

Pilgrim, J. S.; Peterson, K. A.

2001-01-01

Southwest Sciences is developing a new microgravity combustion diagnostic based on UV diode lasers. The instrument will allow absolute concentration measurements of combustion species on a variety of microgravity combustion platforms including the Space Station. Our approach uses newly available room temperature UV diode lasers, thereby keeping the instrument compact, rugged and energy efficient. The feasibility of the technique was demonstrated by measurement of CH radicals in laboratory flames. Further progress in fabrication technology of UV diode lasers at shorter wavelengths and higher power will result in detection of transient species in the deeper UV. High sensitivity detection of combustion radicals is provided with wavelength modulation absorption spectroscopy.

Visible laser and superluminescent diode based free space and underwater communications

KAUST Repository

Ooi, Boon S.

2017-01-30

We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

Visible laser and superluminescent diode based free space and underwater communications

KAUST Repository

Ooi, Boon S.

2017-01-01

We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

Does laser diode irradiation improve the degree of conversion of simplified dentin bonding systems?

Directory of Open Access Journals (Sweden)

Leticia Ferreira de Freitas BRIANEZZI

Full Text Available Abstract Simplified dentin-bonding systems are clinically employed for most adhesive procedures, and they are prone to hydrolytic degradation. Objective This study aimed to investigate the effect of laser diode irradiation on the degree of conversion (DC, water sorption (WS, and water solubility (WSB of these bonding systems in an attempt to improve their physico-mechanical resistance. Material and Methods Two bonding agents were tested: a two-step total-etch system [Adper™ Single Bond 2, 3M ESPE (SB] and a universal system [Adper™ Single Bond Universal, 3M ESPE (SU]. Square-shaped specimens were prepared and assigned into 4 groups (n=5: SB and SU (control groups – no laser irradiation and SB-L and SU-L [SB and SU laser (L – irradiated groups]. DC was assessed using Fourier transform infrared spectroscopy with attenuated total reflectance. Additional uncured resin samples (≈3.0 µL, n=5 of each adhesive were also scanned for final DC calculation. For WS/WSB tests, similar specimens (n=10 were prepared and measured by monitoring the mass changes after dehydration/water storage cycles. For both tests, adhesive fluids were dropped into standardized Teflon molds (6.0×6.0×1.0 mm, irradiated with a 970-nm laser diode, and then polymerized with an LED-curing unit (1 W/cm2. Results Laser irradiation immediately before photopolymerization increased the DC (% of the tested adhesives: SB-L>SB>SU-L>SU. For WS/WSB (μg/mm3, only the dentin bonding system (DBS was a significant factor (pSU. Conclusion Irradiation with a laser diode improved the degree of conversion of all tested simplified dentin bonding systems, with no impact on water sorption and solubility.

High power multiple wavelength diode laser stack for DPSSL application without temperature control

Science.gov (United States)

Hou, Dong; Yin, Xia; Wang, Jingwei; Chen, Shi; Zhan, Yun; Li, Xiaoning; Fan, Yingmin; Liu, Xingsheng

2018-02-01

High power diode laser stack is widely used in pumping solid-state laser for years. Normally an integrated temperature control module is required for stabilizing the output power of solid-state laser, as the output power of the solid-state laser highly depends on the emission wavelength and the wavelength shift of diode lasers according to the temperature changes. However the temperature control module is inconvenient for this application, due to its large dimension, high electric power consumption and extra adding a complicated controlling system. Furthermore, it takes dozens of seconds to stabilize the output power when the laser system is turned on. In this work, a compact hard soldered high power conduction cooled diode laser stack with multiple wavelengths is developed for stabilizing the output power of solid-state laser in a certain temperature range. The stack consists of 5 laser bars with the pitch of 0.43mm. The peak output power of each bar in the diode laser stack reaches as much as 557W and the combined lasing wavelength spectrum profile spans 15nm. The solidstate laser, structured with multiple wavelength diode laser stacks, allows the ambient temperature change of 65°C without suddenly degrading the optical performance.

A diode laser-based velocimeter providing point measurements in unseeded flows using modulated filtered Rayleigh scattering (MFRS)

Science.gov (United States)

Jagodzinski, Jeremy James

2007-12-01

The development to date of a diode-laser based velocimeter providing point-velocity-measurements in unseeded flows using molecular Rayleigh scattering is discussed. The velocimeter is based on modulated filtered Rayleigh scattering (MFRS), a novel variation of filtered Rayleigh scattering (FRS), utilizing modulated absorption spectroscopy techniques to detect a strong absorption of a relatively weak Rayleigh scattered signal. A rubidium (Rb) vapor filter is used to provide the relatively strong absorption; alkali metal vapors have a high optical depth at modest vapor pressures, and their narrow linewidth is ideally suited for high-resolution velocimetry. Semiconductor diode lasers are used to generate the relatively weak Rayleigh scattered signal; due to their compact, rugged construction diode lasers are ideally suited for the environmental extremes encountered in many experiments. The MFRS technique utilizes the frequency-tuning capability of diode lasers to implement a homodyne detection scheme using lock-in amplifiers. The optical frequency of the diode-based laser system used to interrogate the flow is rapidly modulated about a reference frequency in the D2-line of Rb. The frequency modulation is imposed on the Rayleigh scattered light that is collected from the probe volume in the flow under investigation. The collected frequency modulating Rayleigh scattered light is transmitted through a Rb vapor filter before being detected. The detected modulated absorption signal is fed to two lock-in amplifers synchronized with the modulation frequency of the source laser. High levels of background rejection are attained since the lock-ins are both frequency and phase selective. The two lock-in amplifiers extract different Fourier components of the detected modulated absorption signal, which are ratioed to provide an intensity normalized frequency dependent signal from a single detector. A Doppler frequency shift in the collected Rayleigh scattered light due to a change

DFB laser diodes for sensing applications using photoacoustic spectroscopy

International Nuclear Information System (INIS)

Koeth, J; Fischer, M; Legge, M; Seufert, J; Roessner, K; Groninga, H

2010-01-01

We present typical device characteristics of novel DFB laser diodes which are employed in various sensing applications including high resolution photoacoustic spectroscopy. The laser diodes discussed are based on a genuine fabrication technology which allows for the production of ultra stable devices within a broad spectral range from 760 nm up to 3000 nm wavelength. The devices exhibit narrow linewidths down to <1 MHz which makes them ideally suited for all photoacoustic sensing applications where a high spectral purity is required. As an example we will focus on a typical medical application where these diodes are used for breath analysis using photoacoustic spectroscopy.

Power Scaling of Nonlinear Frequency Converted Tapered Diode Lasers for Biophotonics

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Hansen, Anders Kragh; Müller, A.

2014-01-01

Diode lasers have proven to be versatile light sources for a wide range of applications. Nonlinear frequency conversion of high brightness diode lasers has recently resulted in visible light power levels in the watts range enabling an increasing number of applications within biophotonics. This re...... and efficiency are included. Application examples within pumping of mode-locked Ti:sapphire lasers and implementation of such lasers in optical coherence tomography are presented showing the application potential of these lasers....

Highly-reliable laser diodes and modules for spaceborne applications

Science.gov (United States)

Deichsel, E.

2017-11-01

Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

TUNABLE DIODE LASER MEASUREMENTS OF NO2 NEAR 670 NM AND 395 NM. (R823933)

Science.gov (United States)

Two single-mode diode lasers were used to record high-resolution absorption spectra of NO2 (dilute in Ar) near 670.2 and 394.5 nm over a range of temperatures (296 to 774 K) and total pressures (2.4 x 10(-2) to 1 atm). A commercial InGaAsP laser was tuned 1.3 cm(-1) at a repetiti...

Laser-diode pumped 40-W Yb:YAG ceramic laser.

Science.gov (United States)

Hao, Qiang; Li, Wenxue; Pan, Haifeng; Zhang, Xiaoyi; Jiang, Benxue; Pan, Yubai; Zeng, Heping

2009-09-28

We demonstrated a high-power continuous-wave (CW) polycrystalline Yb:YAG ceramic laser pumped by fiber-pigtailed laser diode at 968 nm with 400 mum fiber core. The Yb:YAG ceramic laser performance was compared for different Yb(3+) ion concentrations in the ceramics by using a conventional end-pump laser cavity consisting of two flat mirrors with output couplers of different transmissions. A CW laser output of 40 W average power with M(2) factor of 5.8 was obtained with 5 mol% Yb concentration under 120 W incident pump power. This is to the best of our knowledge the highest output power in end-pumped bulk Yb:YAG ceramic laser.

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.; Majid, Mohammed Abdul; Afandy, Rami; Aljabr, Ahmad

2016-01-01

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III

Continuous-wave dual-wavelength operation of a distributed feedback laser diode with an external cavity using a volume Bragg grating

Science.gov (United States)

Zheng, Yujin; Sekine, Takashi; Kurita, Takashi; Kato, Yoshinori; Kawashima, Toshiyuki

2018-03-01

We demonstrate continuous-wave dual-wavelength operation of a broad-area distributed feedback (DFB) laser diode with a single external-cavity configuration. This high-power DFB laser has a narrow bandwidth (current and temperature ranges.

An analysis of transient thermal properties for high power GaN-based laser diodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Jae Min; Kim, Seungtaek; Kang, Sung Bok; Kim, Young Jin; Jeong, Hoon; Lee, Kyeongkyun; Kim, Jongseok [Korea Institute of Industrial Technology, 35-3 Hongcheon-Ri, Ipjang-Myeon, Cheonan, Chungnam 331-825 (Korea); Lee, Sangdon; Suh, Dongsik [QSI Co., Ltd., 315-9 Cheonheung-Ri, Sungger-Eup, Cheonan, Chungnam 330-836 (Korea); Yi, Jeong Hoon; Choi, Yoonho; Jung, Seok Gu; Noh, Minsoo [LG Electronics Advanced Research Institute, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-724 (Korea)

2010-07-15

Thermal properties of 405 nm GaN-based laser diodes were investigated by employing a transient heating response method based on the temperature dependence of diode forward voltage. Thermal resistances of materials consisting of packaged laser diodes were differentiated in transient thermal response curves at a current below threshold current. With a current above threshold current, no significant change in thermal resistances and difference between junction-up and junction-down laser diodes was observed at pulses shorter than 3 sec. From an analysis with long current injections, thermal resistance of a packaged laser diode with a junction-up bonding was {proportional_to}45 C/W which was higher than that of a junction-down bonded laser diode by {proportional_to}10 C/W. Further analyses based on parameters obtained from voltage recovery curves indicated that the time constant for cooling is directly related to the thermal resistance and thermal capacitance of a laser diode package. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A new design of pulsed laser diode driver system for multistate quantum key distribution

Science.gov (United States)

Abdullah, M. S.; Jamaludin, M. Z.; Witjaksono, G.; Mokhtar, M. H. H.

2011-07-01

In this paper, we describe a new design of laser diode driver system based on MOSFET current mirror and digital signal controller (DSC). The system is designed to emit stream pairs of photons from three semiconductor laser diodes. The DSC is able to switch between the three laser diodes at constant rate. The duty cycle is maintained at 1% in order to reduce its thermal effect and thus prolong the laser diodes' life cycles. The MOSFET current mirror circuits are capable of delivering constant modulation current with peak current up to 58 mA to each laser diode. This laser driver system will allow the generating biphotons automatically with qubit rate around 8-13% for μ less than or equal to 1, thus making it practical for six-states quantum key distribution implementation.

Spectral beam combining of diode lasers with high efficiency

DEFF Research Database (Denmark)

Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin

2012-01-01

Based on spectral beam combining we obtain 16 W of output power, combining two 1063 nm DBR-tapered diode lasers. The spectral separation within the combined beam can be used for subsequent sum-frequency generation.......Based on spectral beam combining we obtain 16 W of output power, combining two 1063 nm DBR-tapered diode lasers. The spectral separation within the combined beam can be used for subsequent sum-frequency generation....

Circuit simulation model multi-quantum well laser diodes inducing transport and capture/escape

International Nuclear Information System (INIS)

Zhuber-Okrog, K.

1996-04-01

This work describes the development of world's first circuit simulation model for multi-quantum well (MQW) semiconductor lasers comprising caier transport and capture/escape effects. This model can be seen as the application of a new semiconductor device simulator for quasineutral structures including MQW layers with an extension for simple single mode modeling of optical behavior. It is implemented in a circuit simulation program. The model is applied to Fabry-Perot laser diodes and compared to measured data. (author)

Application of a 980-nanometer diode laser in neuroendoscopy: a case series.

Science.gov (United States)

Reis, Rodolfo Casimiro; Teixeira, Manoel Jacobsen; Mancini, Marilia Wellichan; Almeida-Lopes, Luciana; de Oliveira, Matheus Fernandes; Pinto, Fernando Campos Gomes

2016-02-01

Ventricular neuroendoscopy represents an important advance in the treatment of hydrocephalus. High-power (surgical) Nd:YAG laser and low-level laser therapy (using 685-nm-wavelength diode laser) have been used in conjunction with neuroendoscopy with favorable results. This study evaluated the use of surgical 980-nm-wavelength diode laser for the neuroendoscopic treatment of ventricular diseases. Nine patients underwent a neuroendoscopic procedure with 980-nm diode laser. Complications and follow-up were recorded. Three in-hospital postoperative complications were recorded (1 intraventricular hemorrhage and 2 meningitis cases). The remaining 6 patients had symptom improvement after endoscopic surgery and were discharged from the hospital within 24-48 hours after surgery. Patients were followed for an average of 14 months: 1 patient developed meningitis and another died suddenly at home. The other patients did well and were asymptomatic until the last follow-up consultation. The 980-nm diode laser is considered an important therapeutic tool for endoscopic neurological surgeries. This study showed its application in different ventricular diseases.

Diode-pumped glass laser (10 J X 10 HZ) development

International Nuclear Information System (INIS)

Tadashi Kanabe; Toshiyuki Kawashima; Masanobu Yamanaka; Masahiro Nakatsuka; Yasukazu Izawa; Takeshi Kanzaki; Hirofumi Kan; Sadao Nakai

2002-01-01

A high-energy, high beam quality, diode-pumped 1053-nm Nd:phosphate glass laser amplifier has been demonstrated in order to verify the conceptual design of HALNA (High Average-power Laser for Nuclear-fusion Application): a diode-pumped solid-state laser based on a water-cooled zig-zag slab optical geometry. This amplifier yielded 8.5 J output energy per pulse at 0.5 Hz in a 20 ns pulse of two times the diffraction limit beam quality with an optical-to-optical conversion efficiency of 10.9%. The experimental results revealed that the primary requirements for the IFE driver, such as diode-pumping, energy storage and extraction efficiencies, and beam quality have been fulfilled

A comparison of diode laser and Er:YAG lasers in the treatment of gingival melanin pigmentation.

Science.gov (United States)

Simşek Kaya, Göksel; Yapici Yavuz, Günay; Sümbüllü, Muhammed A; Dayi, Ertunç

2012-03-01

This study compared the use of diode and Er:YAG lasers in treating gingival melanin pigmentation (GMP) in terms of gingival depigmentation, local anesthesia requirements, postoperative pain/discomfort, depigmentation effectiveness, and total treatment duration. Twenty patients (13 female, 7 male) referred with GMP were enrolled in the study. Patients were randomly divided into 2 groups. Group 1 was treated with a gallium aluminum arsenide diode laser with a continuous wavelength of 808 nm, and group 2 was treated with an Er:YAG laser with a continuous wavelength of 2,940 nm. Gingival depigmentation was performed by applying the laser at 1 W. Treatment was administered on a weekly basis until a normal pink gingival color was observable in clinical examination and photographs. In addition, patients were asked to evaluate the procedure by using a self-administered questionnaire. Procedures were carried out without the need for any topical or local anesthetic, and no unpleasant events occurred during the actual procedure or the healing period. The total length of treatment was significantly shorter with the diode laser (group 1) than with the Er:YAG laser (group 2; P Diode and Er:YAG lasers administered at 1 W both result in satisfactory depigmentation of GMP. Copyright © 2012 Elsevier Inc. All rights reserved.

2000W high beam quality diode laser for direct materials processing

Science.gov (United States)

Qin, Wen-bin; Liu, You-qiang; Cao, Yin-hua; Gao, Jing; Pan, Fei; Wang, Zhi-yong

2011-11-01

This article describes high beam quality and kilowatt-class diode laser system for direct materials processing, using optical design software ZEMAX® to simulate the diode laser optical path, including the beam shaping, collimation, coupling, focus, etc.. In the experiment, the diode laser stack of 808nm and the diode laser stack of 915nm were used for the wavelength coupling, which were built vertical stacks up to 16 bars. The threshold current of the stack is 6.4A, the operating current is 85A and the output power is 1280W. Through experiments, after collimating the diode laser beam with micro-lenses, the fast axis BPP of the stack is less than 60mm.mrad, and the slow-axis BPP of the stack is less than 75mm.mrad. After shaping the laser beam and improving the beam quality, the fast axis BPP of the stack is still 60mm.mrad, and the slow-axis BPP of the stack is less than 19mm.mrad. After wavelength coupling and focusing, ultimately the power of 2150W was obtained, focal spot size of 1.5mm * 1.2mm with focal length 300mm. The laser power density is 1.2×105W/cm2, and that can be used for metal remelting, alloying, cladding and welding. The total optical coupling conversion efficiency is 84%, and the total electrical - optical conversion efficiency is 50%.

Laser diode stack beam shaping for efficient and compact long-range laser illuminator design

Science.gov (United States)

Lutz, Y.; Poyet, J. M.

2014-04-01

Laser diode stacks are interesting laser sources for active imaging illuminators. They allow the accumulation of large amounts of energy in multi-pulse mode, which is best suited for long-range image recording. Even when the laser diode stacks are equipped with fast-axis collimation (FAC) and slow-axis collimation (SAC) micro-lenses, their beam parameter products BPP are not compatible with direct use in highly efficient and compact illuminators. This is particularly true when narrow divergences are required such as for long-range applications. A solution to overcome these difficulties is to enhance the poor slow-axis BPP by virtually restacking the laser diode stack. We present a beam shaping and homogenization method that is low-cost and efficient and has low alignment sensitivity. After conducting simulations, we have realized and characterized the illuminator. A compact long-range laser illuminator has been set up with a divergence of 3.5×2.6 mrad and a global efficiency of 81%. Here, a projection lens with a clear aperture of 62 mm and a focal length of 571 mm was used.

Laser diode pumped ND: Glass slab laser for inertial fusion energy

International Nuclear Information System (INIS)

Yamanaka, M.; Kanabe, T.; Matsui, H.

2001-01-01

As a first step of a driver development for the inertial fusion energy, we are developing a laser-diode-pumped zig-zag Nd:glass slab laser amplifier system HALNA 10 (High Average-power Laser for Nuclear-fusion Application) which can generate an output of 10 J per pulse at 1053 nm in 10 Hz operation. The water-cooled zig-zag Nd:glass slab is pumped from both sides by 803-nm AlGaAs laser-diode(LD) module; each LD module has an emitting area of 420 mm x 10 mm and two LD modules generated in total 218 (max.) kW peak power with 2.6kW/cm 2 peak intensity at 10 Hz repetition rate. We have obtained in a preliminary experiment a 8.5 J output energy at 0.5 Hz with beam quality of 2 times diffraction limited far-field pattern, which nearly confirmed our conceptual design. (author)

Green high-power tunable external-cavity GaN diode laser at 515 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-01-01

A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam...... incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode...... laser system....

In Vitro Study of Dentin Hypersensitivity Treated by 980-nm Diode Laser.

Science.gov (United States)

Liu, Ying; Gao, Jie; Gao, Yan; Xu, Shuaimei; Zhan, Xueling; Wu, Buling

2013-01-01

To investigate the ultrastructural changes of dentin irradiated with 980-nm diode laser under different parameters and to observe the morphological alterations of odontoblasts and pulp tissue to determine the safety parameters of 980-nm diode laser in the treatment of dentin hypersensitivity (DH). Twenty extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into four areas and was irradiated by 980-nm diode laser under different parameters: Group A: control group, 0 J/cm(2); Group B: 2 W/CW (continuous mode), 166 J/cm(2); Group C: 3W/CW, 250 J/cm(2); and Group D: 4W/CW, 333 J/cm(2). Ten additional extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into two areas and was irradiated by 980-nm diode laser: Group E: control group, 0 J/cm(2); and Group F: 2.0 W/CW, 166 J/cm(2). The morphological alterations of the dentin surfaces and odontoblasts were examined with scanning electron microscopy (SEM), and the morphological alterations of the dental pulp tissue irradiated by laser were observed with an upright microscope. The study demonstrated that dentinal tubules can be entirely blocked after irradiation by 980-nm diode laser, regardless of the parameter setting. Diode laser with settings of 2.0 W and 980-nm sealed exposed dentin tubules effectively, and no significant morphological alterations of the pulp and odontoblasts were observed after irradiation. Irradiation with 980-nm diode laser could be effective for routine clinical treatment of DH, and 2.0W/CW (166 J/cm(2)) was a suitable energy parameter due to its rapid sealing of the exposed dentin tubules and its safety to the odontoblasts and pulp tissue.

In Vitro Study of Dentin Hypersensitivity Treated by 980-nm Diode Laser

Science.gov (United States)

Liu, Ying; Gao, Jie; Gao, Yan; XU, Shuaimei; Zhan, Xueling; Wu, Buling

2013-01-01

Introduction: To investigate the ultrastructural changes of dentin irradiated with 980-nm diode laser under different parameters and to observe the morphological alterations of odontoblasts and pulp tissue to determine the safety parameters of 980-nm diode laser in the treatment of dentin hypersensitivity (DH). Methods: Twenty extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into four areas and was irradiated by 980-nm diode laser under different parameters: Group A: control group, 0 J/cm2; Group B: 2 W/CW (continuous mode), 166 J/cm2; Group C: 3W/CW, 250 J/cm2; and Group D: 4W/CW, 333 J/cm2. Ten additional extracted human third molars were selected to prepare dentin discs. Each dentin disc was divided into two areas and was irradiated by 980-nm diode laser: Group E: control group, 0 J/cm2; and Group F: 2.0 W/CW, 166 J/cm2. The morphological alterations of the dentin surfaces and odontoblasts were examined with scanning electron microscopy (SEM), and the morphological alterations of the dental pulp tissue irradiated by laser were observed with an upright microscope. Results: The study demonstrated that dentinal tubules can be entirely blocked after irradiation by 980-nm diode laser, regardless of the parameter setting. Diode laser with settings of 2.0 W and 980-nm sealed exposed dentin tubules effectively, and no significant morphological alterations of the pulp and odontoblasts were observed after irradiation. Conclusions: Irradiation with 980-nm diode laser could be effective for routine clinical treatment of DH, and 2.0W/CW (166 J/cm2) was a suitable energy parameter due to its rapid sealing of the exposed dentin tubules and its safety to the odontoblasts and pulp tissue. PMID:25606318

Comparison of laser diode response to pulsed electrical and radiative excitations

International Nuclear Information System (INIS)

Baggio, J.; Rainsant, J.M.; D'hose, C.; Lalande, P.; Musseau, O.; Leray, J.L.

1996-01-01

The authors have studied the electrical and optical response of two laser diodes under transient irradiation. Both diodes exhibit a positive photocurrent, which adds to the bias current, and a decrease of the optical power until extinction when dose rate is increased. Direct carrier generation in the laser cavity is a second order phenomena. The diode overall response is driven by both the substrate photocurrent and the transient conduction of current confinement regions, which decrease the net current density in the cavity and switches-off the laser emission. This behavior is in good agreement with pulsed electrical characterizations and 2D simulations

[Gas pipeline leak detection based on tunable diode laser absorption spectroscopy].

Science.gov (United States)

Zhang, Qi-Xing; Wang, Jin-Jun; Liu, Bing-Hai; Cai, Ting-Li; Qiao, Li-Feng; Zhang, Yong-Ming

2009-08-01

The principle of tunable diode laser absorption spectroscopy and harmonic detection technique was introduced. An experimental device was developed by point sampling through small multi-reflection gas cell. A specific line near 1 653. 7 nm was targeted for methane measurement using a distributed feedback diode laser as tunable light source. The linearity between the intensity of second harmonic signal and the concentration of methane was determined. The background content of methane in air was measured. The results show that gas sensors using tunable diode lasers provide a high sensitivity and high selectivity method for city gas pipeline leak detection.

Optical phase dynamics in mutually coupled diode laser systems exhibiting power synchronization

International Nuclear Information System (INIS)

Pal, Vishwa; Ghosh, R; Prasad, Awadhesh

2011-01-01

We probe the physical mechanism behind the known phenomenon of power synchronization of two diode lasers that are mutually coupled via their delayed optical fields. In a diode laser, the amplitude and the phase of the optical field are coupled by the so-called linewidth enhancement factor, α. In this work, we explore the role of optical phases of the electric fields in amplitude (and hence power) synchronization through α in such mutually delay-coupled diode laser systems. Our numerical results show that the synchronization of optical phases drives the powers of lasers to synchronized death regimes. We also find that as α varies for different diode lasers, the system goes through a sequence of in-phase amplitude-death states. Within the windows between successive amplitude-death regions, the cross-correlation between the field amplitudes exhibits a universal power-law behaviour with respect to α.

High-efficiency diode-pumped femtosecond Yb:YAG ceramic laser

DEFF Research Database (Denmark)

Zhou, Binbin; Wei, Z.Y.; Zou, Y.W.

2010-01-01

A highly efficient diode-end-pumped femtosecond Yb:yttrium aluminum garnet (YAG) ceramic laser was demonstrated. Pumped by a 968 nm fiber-coupled diode laser, 1.9 W mode-locked output power at a repetition rate of 64.27 MHz was obtained with 3.5 W absorbed pump power, corresponding to a slope...... efficiency of 76%. Our measurement showed that the pulse duration was 418 fs with the central wavelength of 1048 nm....

Comparison of the ablation ability of nucleus pulposus after 1,064 nm Nd:YAG laser and 980 nm diode laser radiation.

Science.gov (United States)

Yin, Jian; Han, Zhengfeng; Guo, Baofeng; Guo, Han; Zhang, Tongtong; Zeng, Yanjun; Ren, Longxi

2015-07-01

To compare the ablation ability of nucleus pulposus after 1,064 nm Nd:YAG laser and 980 nm diode laser radiation. Goat spine specimen (GSS) was radiated using Nd:YAG laser and 980 nm diode laser and then divided into five groups based on the final energy--200, 400, 600, 800 and 1,000 J groups. The ablation quality of nucleus pulposus after radiation was recorded. The ablation quality of GSS was greater at higher radiation energies in both lasers. When compared at the same energy level, the ablation quality of GSS was greater in 980 nm diode laser than in 1,064 nm Nd:YAG laser. Statistical significance was observed in 200 and 400 J groups (P diode laser showed better ablation ability than 1,064 nm Nd:YAG laser.

Portable Diode Laser Diagnostic System for Collaborative Research on Air-Breathing Combustion

National Research Council Canada - National Science Library

Hanson, Ronald

2003-01-01

This equipment grant focused on four areas: (1) portable diode laser sensors with new fiber-coupled diode lasers and the support equipment to provide higher power with extended wavelength tuning range and speed; (2...

Intensity Noise Transfer Through a Diode-pumped Titanium Sapphire Laser System

DEFF Research Database (Denmark)

Tawfieq, Mahmoud; Hansen, Anders Kragh; Jensen, Ole Bjarlin

2017-01-01

higher RIN than a setup with only a single nonlinear crystal. The Ti:S is shown to have a cut-off frequency around 500 kHz, which means that noise structures of the pump laser above this frequency are strongly suppressed. Finally, the majority of the Ti:S noise seems to originate from the laser itself......In this paper, we investigate the noise performance and transfer in a titanium sapphire (Ti:S) laser system. This system consists of a DBR tapered diode laser, which is frequency doubled in two cascaded nonlinear crystals and used to pump the Ti:S laser oscillator. This investigation includes...... electrical noise characterizations of the utilized power supplies, the optical noise of the fundamental light, the second harmonic light, and finally the optical noise of the femtosecond pulses emitted by the Ti:S laser. Noise features originating from the electric power supply are evident throughout...

Improvement of a triple-wavelength erbium-doped fiber laser using a Fabry–Perot laser diode

International Nuclear Information System (INIS)

Peng, P C; Hu, H L; Wang, J B

2013-01-01

This work demonstrates the feasibility of a simple construct of a tunable triple-wavelength fiber ring laser using a Fabry–Perot laser diode (FP-LD) and an optical tunable bandpass filter. An optical tunable bandpass filter is used within the cavity of an erbium-doped fiber laser to select the lasing wavelength. Because the Fabry–Perot laser diode is in combination with the tunable bandpass filter, the erbium-doped fiber laser can stably lase three wavelengths simultaneously. Moreover, this laser is easily tuned dynamically. This triple-wavelength output performs satisfactorily, with its optical side-mode-suppression-ratio (SMSR) exceeding 40 dB. Furthermore, the wavelength tuning range of this triple-wavelength erbium-doped fiber laser is greater than 27 nm. (paper)

Passive mode locking in a multisegment laser diode with an external cavity

International Nuclear Information System (INIS)

Andreeva, E V; Magnitskiy, Sergey A; Koroteev, Nikolai I; Salik, E; Feinberg, J; Starodubov, D S; Shramenko, M V; Yakubovich, S D

1999-01-01

The structure and operating conditions of multisegment laser (GaAl)As diodes with passive locking of the modes of an external cavity (bulk and fibre) were optimised. Regular trains of optical single pulses of picosecond duration were generated in a spectral range 850 - 860 nm. The peak power of these pulses was several watts and the repetition rate was near 1 GHz. Under certain conditions these output pulses were linearly chirped, i.e. they were suitable for subpicosecond time compression. Laboratory prototypes were made of miniature light-emitting modules with these characteristics. (lasers)

Comparison of SHG Power Modulation by Wavelength Detuning of DFB- and DBR-Tapered Laser Diodes

DEFF Research Database (Denmark)

Christensen, Mathias; Hansen, Anders Kragh; Noordegraaf, Danny

2016-01-01

of the response of the second harmonic light to perturbations of the infrared laser diode and compare how the response differs for DFB- and DBR-Tapered laser diodes. We show that the visible light can be modulated from CW to kHz with modulation depths above 90% by wavelength detuning the laser diode.......Pulsed visible lasers are used for a number of applications such as laser displays and medical treatments. Generating this visible light by direct frequency doubling of high power diode lasers opens new possibilities on how the power modulation can be performed. We present an investigation...

High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

Science.gov (United States)

Frez, Clifford F.; Briggs, Ryan M.; Forouhar, Siamak; Borgentun, Carl E.; Gupta, James

2013-01-01

Central to the advancement of both satellite and in-situ science are improvements in continuous-wave and pulsed infrared laser systems coupled with integrated miniaturized optics and electronics, allowing for the use of powerful, single-mode light sources aboard both satellite and unmanned aerial vehicle platforms. There is a technological gap in supplying adequate laser sources to address the mid-infrared spectral window for spectroscopic characterization of important atmospheric gases. For high-power applications between 2 to 3 micron, commercial laser technologies are unsuitable because of limitations in output power. For instance, existing InP-based laser systems developed for fiber-based telecommunications cannot be extended to wavelengths longer than 2 micron. For emission wavelengths shorter than 3 micron, intersubband devices, such as infrared quantum cascade lasers, become inefficient due to band-offset limitations. To date, successfully demonstrated singlemode GaSb-based laser diodes emitting between 2 and 3 micron have employed lossy metal Bragg gratings for distributed- feedback coupling, which limits output power due to optical absorption. By optimizing both the quantum well design and the grating fabrication process, index-coupled distributed-feedback 2.65-micron lasers capable of emitting in excess of 25 mW at room temperature have been demonstrated. Specifically, lasers at 3,777/cm (2.65 micron) have been realized to interact with strong absorption lines of HDO and other isotopologues of H2O. With minor modifications of the optical cavity and quantum well designs, lasers can be fabricated at any wavelength within the 2-to-3-micron spectral window with similar performance. At the time of this reporting, lasers with this output power and wavelength accuracy are not commercially available. Monolithic ridge-waveguide GaSb lasers were fabricated that utilize secondorder lateral Bragg gratings to generate single-mode emission from InGaAsSb/ Al

PERFORMANCE OPTIMIZATION OF THE DIODE-PUMPED SOLID-STATE LASER FOR SPACE APPLICATIONS

Directory of Open Access Journals (Sweden)

D. A. Arkhipov

2015-11-01

Full Text Available Subject of Research. Thermophysical and optical techniques of parameter regulation for diode pumped solid-state laser are studied as applied to space laser communication and laser ranging lines. Methods. The investigations are carried out on the base of the original design of diode pumped solid-state laser module that includes the following: Nd:YAG slab element, diode pumped by 400W QCW produced by NORTHROP GRUMMAN; two-pass unstable resonator with rotation of the laser beam aperture about its axis through 1800; the output mirror of the resonator with a variable reflection coefficient; hyperthermal conductive plates for thermal stabilization of the laser diode generation modes. The presence of thermal conductive plates excludes conventional running water systems applied as cooling systems for solid-state laser components. The diodes temperature stabilization is achieved by applying the algorithm of pulse-width modulation of power of auxiliary electric heaters. To compensate for non-stationary thermal distortions of the slab refractive index, the laser resonator scheme comprises a prism reflector with an apex angle of 1200. Narrow sides of the prism are covered with reflective coating, and its wide side is sprayed with antireflection coating. The beam aperture is turned around its axis through 1800 because of triple reflection of the beam inside the prism. The turning procedure leads to compensating for the output beam phase distortions in view of symmetric character of the aberrations of slab refractive index. To suppress parasitic oscillations inside the slab, dielectric coatings of wide sides of the slab are used. Main Results. We have demonstrated theoretically and experimentally that the usage of hyperthermal conductive plates together with the algorithm of pulse-width modulation provides stabilizing of the diode substrate temperature accurate within ± 0.1 °С and smoothing the temperature distribution along the plate surface accurate

Realisation and characterization of a temperature controller for a laser diode

International Nuclear Information System (INIS)

Meknessi, Asma; Hafdhi, Hajer

2010-01-01

Our final project study focuses on the characterization and realisation of a temperature conroller for a laser diode using the proportional integral derivative (PID) servo technique. In this order, w developed and carried out two electronic cards. The first is dedicated to the PID servo. Th electronics of this card allows measurement of temperature, comparison with a user fixed temperature, the measurement of the error and finally the correction of temperature by heating or cooling the laser diode using a Peltier element. The second board is designed in order to supply the Peltier element by about 6V/3A. the first part of our work is a bibliographical research on lasers, laser diodes and their applications in the biomedical field.

Temperature issues with white laser diodes, calculation and approach for new packages

Science.gov (United States)

Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

2015-01-01

Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

Comparison of effects of diode laser and CO2 laser on human teeth and their usefulness in topical fluoridation.

Science.gov (United States)

González-Rodríguez, Alberto; de Dios López-González, Juan; del Castillo, Juan de Dios Luna; Villalba-Moreno, Juan

2011-05-01

Various authors have reported more effective fluoridation from the use of lasers combined with topical fluoride than from conventional topical fluoridation. Besides the beneficial effect of lasers in reducing the acid solubility of an enamel surface, they can also increase the uptake of fluoride. The study objectives were to compare the action of CO(2) and GaAlAs diode lasers on dental enamel and their effects on pulp temperature and enamel fluoride uptake. Different groups of selected enamel surfaces were treated with amine fluoride and irradiated with CO(2) laser at an energy power of 1 or 2 W or with diode laser at 5 or 7 W for 15 s each and compared to enamel surfaces without treatment or topical fluoridated. Samples were examined by means of environmental scanning electron microscopy (ESEM). Surfaces of all enamel samples were then acid-etched, measuring the amount of fluoride deposited on the enamel by using a selective ion electrode. Other enamel surfaces selected under the same conditions were irradiated as described above, measuring the increase in pulp temperature with a thermocouple wire. Fluorination with CO(2) laser at 1 W and diode laser at 7 W produced a significantly greater fluoride uptake on enamel (89 ± 18 mg/l) and (77 ± 17 mg/l) versus topical fluoridation alone (58 ± 7 mg/l) and no treatment (20 ± 1 mg/l). Diode laser at 5 W produced a lesser alteration of the enamel surface compared to CO(2) laser at 1 W, but greater pulp safety was provided by CO(2) laser (ΔT° 1.60° ± 0.5) than by diode laser (ΔT° 3.16° ± 0.6). Diode laser at 7 W and CO(2) laser at 2 W both caused alterations on enamel surfaces, but great pulp safety was again obtained with CO(2) (ΔT° 4.44° ± 0.60) than with diode (ΔT° 5.25° ± 0.55). Our study demonstrates that CO(2) and diode laser irradiation of the enamel surface can both increase fluoride uptake; however, laser energy parameters must be carefully

Operational characteristics of dual gain single cavity Nd:YVO 4 laser

Indian Academy of Sciences (India)

Operational characteristics of a dual gain single cavity Nd:YVO4 laser have been investigated. With semiconductor diode laser pump power of 2 W, 800 mW output was obtained with a slope efficiency of 49%. Further, by changing the relative orientation of the two crystals the polarization characteristics of the output could be ...

Laser diagnostics on magnetically insulated flashover pulsed ion diodes

International Nuclear Information System (INIS)

Horioka, K.; Tazima, N.; Fukui, T.; Kasuya, K.

1989-01-01

Our recent experimental results on the characteristics of a flashover-type applied-B magnetically insulated pulsed ion diode are described. The main issues are to investigate the cause of impurity of the extracted beam and to examine the effect of neutral particles on the diode characteristics. In the experiment, our main efforts were placed on laser diagnostics of the diode gap behavior. (author)

New alternatives for laser vaporization of the prostate: experimental evaluation of a 980-, 1,318- and 1,470-nm diode laser device.

Science.gov (United States)

Wezel, Felix; Wendt-Nordahl, Gunnar; Huck, Nina; Bach, Thorsten; Weiss, Christel; Michel, Maurice Stephan; Häcker, Axel

2010-04-01

Several diode laser systems were introduced in recent years for the minimal-invasive surgical therapy of benign prostate enlargement. We investigated the ablation capacities, hemostatic properties and extend of tissue necrosis of different diode lasers at wavelengths of 980, 1,318 and 1,470 nm and compared the results to the 120 W GreenLight HPS laser. The laser devices were evaluated in an ex vivo model using isolated porcine kidneys. The weight difference of the porcine kidneys after 10 min of laser vaporization defined the amount of ablated tissue. Blood loss was measured in blood-perfused kidneys following laser vaporization. Histological examination was performed to assess the tissue effects. The side-firing 980 and 1,470 nm diode lasers displayed similar ablative capacities compared to the GreenLight HPS laser (n.s.). The 1,318-nm laser, equipped with a bare-ended fiber, reached a higher ablation rate compared to the other laser devices (each P laser with a bare-ended fiber reached the highest rate compared to the side-firing devices (each P diode lasers showed superior hemostatic properties compared to the GreenLight HPS laser (each P laser), respectively. The diode lasers offered similar ablative capacities and improved hemostatic properties compared to the 120 W GreenLight HPS laser in this experimental ex vivo setting. The higher tissue penetration of the diode lasers compared to the GreenLight HPS laser may explain improved hemostasis.

The Versatility of 980 nm Diode Laser in Dentistry: A Case Series.

Science.gov (United States)

Derikvand, Nahid; Chinipardaz, Zahra; Ghasemi, Sara; Chiniforush, Nasim

2016-01-01

Introduction: Laser surgery has been considered a popular alternative over conventional modalities in dentistry during the last few years. Among different types of lasers, diode lasers have gained special attention in oral soft tissue surgery. Case Reports: Five patients were referred to a private office. After careful evaluation of medical history and oral examination, oral diagnosis and treatment plan of each patient was established as follows: (1) A 21-year-old female with ankyloglossia (tongue-tie); (2) A 65-year-old female with a poor denture fit needing vestibuloplasty and frenectomy; (3) A 10-year-old male patient with pigmented gingiva in mandible and maxilla; (4) A 14-year-old female needing exposure of maxillary right canine for bracket bonding; and (5) A 25-year-old female patient who has a gingival maxillary frenum with a nodule. The treatment plan for all the patients was laser surgery with diode laser at 980 nm, in continuous mode. Results: All the patients experienced normal healing process with no postoperative complications. Favorable outcomes of laser surgery were observed on follow-up sessions. Conclusion: Considering the versatility of the 980 nm diode laser in oral soft tissue surgeries and the advantages of laser surgery, this study suggests the use of 980 nm diode laser in this regard.

970-nm ridge waveguide diode laser bars for high power DWBC systems

Science.gov (United States)

Wilkens, Martin; Erbert, Götz; Wenzel, Hans; Knigge, Andrea; Crump, Paul; Maaßdorf, Andre; Fricke, Jörg; Ressel, Peter; Strohmaier, Stephan; Schmidt, Berthold; Tränkle, Günther

2018-02-01

de lasers are key components in material processing laser systems. While mostly used as pump sources for solid state or fiber lasers, direct diode laser systems using dense wavelength multiplexing have come on the market in recent years. These systems are realized with broad area lasers typically, resulting in beam quality inferior to disk or fiber lasers. We will present recent results of highly efficient ridge waveguide (RW) lasers, developed for dense-wavelength-beamcombining (DWBC) laser systems expecting beam qualities comparable to solid state laser systems and higher power conversion efficiencies (PCE). The newly developed RW lasers are based on vertical structures with an extreme double asymmetric large optical cavity. Besides a low vertical divergence these structures are suitable for RW-lasers with (10 μm) broad ridges, emitting in a single mode with a good beam quality. The large stripe width enables a lateral divergence below 10° (95 % power content) and a high PCE by a comparably low series resistance. We present results of single emitters and small test arrays under different external feedback conditions. Single emitters can be tuned from 950 nm to 975 nm and reach 1 W optical power with more than 55 % PCE and a beam quality of M2 < 2 over the full wavelength range. The spectral width is below 30 pm FWHM. 5 emitter arrays were stabilized using the same setup. Up to now we reached 3 W optical power, limited by power supply, with 5 narrow spectral lines.

Discrete mode laser diodes for FTTH/PON applications up to 10 Gbit/s

Science.gov (United States)

O'Carroll, John; Phelan, Richard; Kelly, Brian; Byrne, Diarmuid; Latkowski, Sylwester; Anandarajah, Prince M.; Barry, Liam P.

2012-06-01

Discrete Mode Laser Diodes (DMLDs) present an economic approach with a focus on high volume manufacturability of single mode lasers using a single step fabrication process. We report on a DMLD designed for operation in the 1550 nm window with high Side Mode Suppression Ratio (SMSR) over a wide temperature tuning range of -20 °C < T < 95 °C. Direct modulation rates as high as 10 Gbit/s are demonstrated at both 1550 nm and 1310 nm. Transmission experiments were also carried out over single mode fibre at both wavelengths. Using dispersion pre-compensation transmission from 0 to 60 km is demonstrated at 1550 nm with a maximum power penalty measured at 60 km of 3.6 dB.

High power CW output from low confinement asymmetric structure diode laser

NARCIS (Netherlands)

Iordache, G.; Buda, M.; Acket, G.A.; Roer, van de T.G.; Kaufmann, L.M.F.; Karouta, F.; Jagadish, C.; Tan, H.H.

1999-01-01

High power continuous wave output from diode lasers using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 µm wide stripe 1-3 mm long diode lasers were studied. 1.8 W

Design of 20 W fiber-coupled green laser diode by Zemax

Science.gov (United States)

Qi, Yunfei; Zhao, Pengfei; Wu, Yulong; Chen, Yongqi; Zou, Yonggang

2017-09-01

We represent a design of a 20 W, fiber-coupled diode laser module based on 26 single emitters at 520 nm. The module can produce more than 20 W output power from a standard fiber with core diameter of 400 μm and numerical aperture (NA) of 0.22. To achieve a 20 W laser beam, the spatial beam combination and polarization beam combination by polarization beam splitter are used to combine output of 26 single emitters into a single beam, and then an aspheric lens is used to couple the combined beam into an optical fiber. The simulation shows that the total coupling efficiency is more than 95%. Project supported by the National Key R& D Program of China (No. 2016YFB0402105), the Key Deployment Program of the Chinese Academy of Sciences (No. KGZD-SW-T01-2), and the National Natural Science Foundation of China (No. 61404135).

Emission properties of diode laser bars during pulsed high-power operation

International Nuclear Information System (INIS)

Hempel, Martin; Tomm, Jens W; Elsaesser, Thomas; Hennig, Petra

2011-01-01

High-power diode laser bars (cm-bars) are subjected to single pulse step tests carried out up to and beyond their ultimate limits of operation. Laser nearfields and thermal behaviour are monitored for pulse widths in the 10–100 µs range with streak- and thermo-cameras, respectively. Thresholds of catastrophic optical damage are determined, and their dependence on the length of the injected current pulses is explained qualitatively. This approach permits testing the hardness of facet coatings of cm-bars with or without consideration of accidental single pre-damaged emitter failure effects and thermal crosstalk between the emitters. This allows for the optimization of pulsed operation parameters, helps limiting sudden degradation and provides insight into the mechanisms governing the device emission behaviour at ultimate output powers. (fast track communication)

Photobiomodulation by helium neon and diode lasers in an excisional wound model: A single blinded trial

Directory of Open Access Journals (Sweden)

Snehil Dixit

2012-01-01

Full Text Available Background: Application of different kinds of lasers in clinical and experimental studies causes photobiomodulation that works at localized cellular and humoral level on various biological systems. Increased numbers of fibroblasts, myofibroblast, and degranulation of mast cells have been the observed benefits post-irradiation. Objective: Was to find out the effect of irradiation with energy densities of 3.38 J/cm 2 , 8 J/cm 2 , and 18 J/cm 2 on animal tissue (albino wistar rats in an excisional wound model and to assess changes in biochemical (hydroxyproline and histopathological levels in excisional wound model. Materials and Methods: The animals were divided into 4 groups, which were labeled as L1, diode laser (18 J/cm 2 , L2 Helium-neon (He-Ne, 8 J/cm 2 , L3 diode laser (3.38 J/cm 2 , and sham treatment for control was depicted by C, respectively. Histological and hydroxyproline analysis was performed on 7, 14, 21 days of post-wounding. One-way analysis of variance, ANOVA and Bonferroni′s multiple comparison tests were done for tissue hydroxyproline levels. Results: There was no significant increase in the hydroxyproline content (P < 0.005 when observed in study group and compared to controls. Whereas significant epithelizations was seen in group treated with He-Ne laser of intensity of 8 J/cm 2 . Conclusion: The experimental observations suggest that low intensity helium-neon laser of 8 J/cm 2 intensity facilitated photo stimulation by tissue repair, but failed to show significant tissue hydroxyproline levels in excisional wound model.

Two-photon transitions driven by a combination of diode and femtosecond lasers.

Science.gov (United States)

Moreno, Marco P; Nogueira, Giovana T; Felinto, Daniel; Vianna, Sandra S

2012-10-15

We report on the combined action of a cw diode laser and a train of ultrashort pulses when each of them drives one step of the 5S-5P-5D two-photon transition in rubidium vapor. The fluorescence from the 6P(3/2) state is detected for a fixed repetition rate of the femtosecond laser while the cw-laser frequency is scanned over the rubidium D(2) lines. This scheme allows for a velocity selective spectroscopy in a large spectral range including the 5D(3/2) and 5D(5/2) states. The results are well described in a simplified frequency domain picture, considering the interaction of each velocity group with the cw laser and a single mode of the frequency comb.

A randomised controlled trial of coblation, diode laser and cold dissection in paediatric tonsillectomy.

Science.gov (United States)

Elbadawey, M R; Hegazy, H M; Eltahan, A E; Powell, J

2015-11-01

This study aimed to compare the efficacy of diode laser, coblation and cold dissection tonsillectomy in paediatric patients. A total of 120 patients aged 10-15 years with recurrent tonsillitis were recruited. Participants were prospectively randomised to diode laser, coblation or cold dissection tonsillectomy. Operative time and blood loss were recorded. Pain was recorded on a Wong-Baker FACES(®) pain scale. The operative time (10 ± 0.99 minutes), blood loss (20 ± 0.85 ml) and pain were significantly lower with coblation tonsillectomy than with cold dissection tonsillectomy (20 ± 1.0 minutes and 30 ± 1.0 ml; p = 0.0001) and diode laser tonsillectomy (15 ± 0.83 minutes and 25 ± 0.83 ml; p = 0.0001). Diode laser tonsillectomy had a shorter operative time (p = 0.0001) and less blood loss (p = 0.001) compared with cold dissection tonsillectomy. However, at post-operative day seven, the diode laser tonsillectomy group had significantly higher pain scores compared with the cold dissection (p = 0.042) and coblation (p = 0.04) tonsillectomy groups. Both coblation and diode laser tonsillectomy are associated with significantly reduced blood loss and shorter operative times compared with cold dissection tonsillectomy. However, we advocate coblation tonsillectomy because of the lower post-operative pain scores compared with diode laser and cold dissection tonsillectomy.

The use of laser diodes for control of uranium vaporization rates

International Nuclear Information System (INIS)

Hagans, K.; Galkowski, J.

1993-09-01

Within the Atomic Vapor Laser Isotope Separation (AVLIS) program we have successfully used the laser absorption spectroscopy technique (LAS) to diagnose process physics performance and control vaporization rate. In the LAS technique, a narrow line-width laser is tuned to an absorption line of the species to be measured. The laser light that is propagated through the sample is and, from this data, the density of the species can be calculated. These laser systems have exclusively consisted of expensive, cumbersome, and difficult to maintain argon-ion-pumped ring dye lasers. While the wavelength flexibility of dye lasers is very useful in a laboratory environment, these laser systems are not well suited for the industrial process control system under development for an AVLIS plant. Diode-lasers offer lower system costs, reduced man power requirements, reduced space requirements, higher system availability, and improved operator safety. We report the. successful deployment and test of a prototype laser diode based uranium vapor rate control system. Diode-laser generated LAS data was used to control the uranium vaporization rate in a hands-off mode for greater than 50 hours. With one minor adjustment the system successfully controlled the vaporization rate for greater than 147 hours. We report excellent agreement with ring dye laser diagnostics and uranium weigh-back measurements

A portable high-power diode laser-based single-stage ceramic tile grout sealing system

Science.gov (United States)

Lawrence, J.; Schmidt, M. J. J.; Li, L.; Edwards, R. E.; Gale, A. W.

2002-02-01

By means of a 60 W high-power diode laser (HPDL) and a specially developed grout material the void between adjoining ceramic tiles has been successfully sealed. A single-stage process has been developed which uses a crushed ceramic tile mix to act as a tough, inexpensive bulk substrate and a glazed enamel surface to provide an impervious surface glaze. The single-stage ceramic tile grout sealing process yielded seals produced in normal atmospheric conditions that displayed no discernible cracks and porosities. The single-stage grout is simple to formulate and easy to apply. Tiles were successfully sealed with power densities as low as 200 kW/ mm2 and at rates of up to 600 mm/ min. Bonding of the enamel to the crushed ceramic tile mix was identified as being primarily due to van der Waals forces and, on a very small scale, some of the crushed ceramic tile mix material dissolving into the glaze. In terms of mechanical, physical and chemical characteristics, the single-stage ceramic tile grout was found to be far superior to the conventional epoxy tile grout and, in many instances, matched and occasionally surpassed that of the ceramic tiles themselves. What is more, the development of a hand-held HPDL beam delivery unit and the related procedures necessary to lead to the commercialisation of the single-stage ceramic tile grout sealing process are presented. Further, an appraisal of the potential hazards associated with the use of the HPDL in an industrial environment and the solutions implemented to ensure that the system complies with the relevant safety standards are given.

Histologic evaluation of laser lipolysis: pulsed 1064-nm Nd:YAG laser versus cw 980-nm diode laser.

Science.gov (United States)

Mordon, Serge; Eymard-Maurin, Anne Françoise; Wassmer, Benjamin; Ringot, Jean

2007-01-01

The use of the laser as an auxiliary tool has refined the traditional technique for lipoplasty. During laser lipolysis, the interaction between the laser and the fat produced direct cellular destruction before the suction, reduced bleeding, and promoted skin tightening. This study sought to perform a comparative histologic evaluation of laser lipolysis with the pulsed 1064-nm Nd:YAG laser versus a continuous 980-nm diode laser. A pulsed 1064-nm Nd:YAG (Smart-Lipo; Deka, Italy) and a CW 980-nm diode laser (Pharaon, Osyris, France) were evaluated at different energy settings for lipolysis on the thighs of a fresh cadaver. The lasers were coupled to a 600-microm optical fiber inserted in a 1-mm diameter cannula. Biopsy specimens were taken on irradiated and non-irradiated areas. Hematoxylin-erythrosin-safran staining and immunostaining (anti-PS100 polyclonal antibody) were performed to identify fat tissue damage. In the absence of laser exposures (control specimens), cavities created by cannulation were seen; adipocytes were round in appearance and not deflated. At low energy settings, tumescent adipocytes were observed. At higher energy settings, cytoplasmic retraction, disruption of membranes, and heat-coagulated collagen fibers were noted; coagulated blood cells were also present. For the highest energy settings, carbonization of fat tissue involving fibers and membranes was clearly seen. For equivalent energy settings, 1064-nm and 980-nm wavelengths gave similar histologic results. Laser lipolysis is a relatively new technique that is still under development. Our histologic findings suggest several positive benefits of the laser, including skin retraction and a reduction in intraoperative bleeding. The interaction of the laser with the tissue is similar at 980 nm and 1064 nm with the same energy settings. Because higher volumes of fat are removed with higher total energy, a high-power 980-nm diode laser could offer an interesting alternative to the 1064-nm Nd

Long-term efficacy of linear-scanning 808 nm diode laser for hair removal compared to a scanned alexandrite laser.

Science.gov (United States)

Grunewald, Sonja; Bodendorf, Marc Oliver; Zygouris, Alexander; Simon, Jan Christoph; Paasch, Uwe

2014-01-01

Alexandrite and diode lasers are commonly used for hair removal. To date, the available spot sizes and repetition rates are defining factors in terms of penetration depth, treatment speed, and efficacy. Still, larger treatment areas and faster systems are desirable. To compare the efficacy, tolerability, and subject satisfaction of a continuously linear-scanning 808 nm diode laser with an alexandrite 755 nm laser for axillary hair removal. A total of 31 adults with skin types I-IV received 6 treatments at 4-week intervals with a 755 nm alexandrite laser (right axilla) and a continuously linear-scanning 808 nm diode laser (left axilla). Axillary hair density was assessed using a computerized hair detection system. There was a significant reduction in axillary hair after the 6th treatment (P lasers was not significant, but both were persistant at 18 months follow-up (left: hair clearance of 73.71%; right: hair clearance of 71.90%). Erythema and perifollicular edema were more common after alexandrite laser treatment, but all side effects were transient. While 62.50% of patients reported more pain in response to treatment with the new diode laser, all patients rated treatment with either laser tolerable. Treatment with either the alexandrite or the linear-scanning diode laser results in significant, comparable, persistent (at least 18 months) axillary hair reduction among individuals with skin types I-IV. © 2013 Wiley Periodicals, Inc.

The danger of semiconductor laser diode radiation to the human eye

International Nuclear Information System (INIS)

Nier, J.

1977-01-01

The UVV 'Laserstrahlen' (laser beam regulation) sets maximum permissible values for radiation exposure that must not be exceeded on the cornea or skin (wavelength range 200 to 1400nm; cornea values: Normal pulsed operation 5 x 10 -7 Ws/cm 2 , continuous operation (>0.1s)5 x 10 -6 W/cm 2 ). Especially laser diodes emitting in the near infrared invite careless handling, of which this paper warns by a detailed illustration of the danger involved and by numerical examples. Data are given on two commercial laser diodes, a continuous operation diode (continuous power 5mW) and a pulse diode (peak pwer 1W, pulse duration 0.2μs), as well as data on aperture angles and geometrical dimensions. Critical cornea and skin distances are distinguished below which the exposure of cornea and skin in the axis of the emission beam is dangerous. For the unfavourable conditions of focussing with a lens (f = 4cm), the following critical cornea distances are obtained: Continuous diode 2.5 km; pulse diode 23.5m. Calculation formulas for special cases are given. (orig.) 891 MG [de

Low level diode laser accelerates wound healing.

Science.gov (United States)

Dawood, Munqith S; Salman, Saif Dawood

2013-05-01

The effect of wound illumination time by pulsed diode laser on the wound healing process was studied in this paper. For this purpose, the original electronic drive circuit of a 650-nm wavelength CW diode laser was reconstructed to give pulsed output laser of 50 % duty cycle and 1 MHz pulse repetition frequency. Twenty male mice, 3 months old were used to follow up the laser photobiostimulation effect on the wound healing progress. They were subdivided into two groups and then the wounds were made on the bilateral back sides of each mouse. Two sessions of pulsed laser therapy were carried along 15 days. Each mice group wounds were illuminated by this pulsed laser for 12 or 18 min per session during these 12 days. The results of this study were compared with the results of our previous wound healing therapy study by using the same type of laser. The mice wounds in that study received only 5 min of illumination time therapy in the first and second days of healing process. In this study, we found that the wounds, which were illuminated for 12 min/session healed in about 3 days earlier than those which were illuminated for 18 min/session. Both of them were healed earlier in about 10-11 days than the control group did.

Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

Science.gov (United States)

Ma, J; Xie, G Q; Gao, W L; Yuan, P; Qian, L J; Yu, H H; Zhang, H J; Wang, J Y

2012-04-15

A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region. © 2012 Optical Society of America

Investigation of Self-injection Locked Visible Laser Diodes for High Bit-rate Visible Light Communication

KAUST Repository

Shamim, Md. Hosne Mobarok; Shemis, Mohamed; Shen, Chao; Oubei, Hassan M.; Ng, Tien Khee; Ooi, Boon S.; Khan, Mohammed Zahed Mustafa

2018-01-01

-mode-suppression-ratio was considerably increased in all the cases, reaching as high as ~20 dB in self-injection locked blue laser diode, thus enabling a close to single mode operation. This work paves the way for attaining high speed optical wireless communications by overcoming

Improving Lifetime of Quasi-CW Laser Diode Arrays for Pumping 2-Micron Solid State Lasers

Science.gov (United States)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Singh, Upendra N.; Kavaya, Michael J.

2007-01-01

Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data on the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime.

QUANTITATIVE DETECTION OF ENVIRONMENTALLY IMPORTANT DYES USING DIODE LASER/FIBER-OPTIC RAMAN

Science.gov (United States)

A compact diode laser/fiber-optic Raman spectrometer is used for quantitative detection of environmentally important dyes. This system is based on diode laser excitation at 782 mm, fiber optic probe technology, an imaging spectrometer, and state-of-the-art scientific CCD camera. ...

Short-Term Audiological Results of Diode Laser in Comparison with Manual Perforation in Stapes Surgery.

Science.gov (United States)

Hamerschmidt, Rogerio; Saab, Stephanie Sbizera; Carvalho, Bettina; Carmo, Carolina do

2018-04-01

Introduction  Diode laser is a new alternative in stapes surgery for otosclerosis. The present study is the first to compare the short-term results of the surgery performed using diode laser to those obtained through the conventional fenestration technique. Objective  To use audiometry to establish a comparative analysis between the functional results obtained through surgery for otosclerosis using diode laser and the conventional technique. Method  Audiometric evaluation of 12 patients submitted to stapes surgery for otosclerosis, using diode laser or conventional fenestration by needle and drills, between 2014 and 2015. Each group was composed of 6 patients. Pre and post-operative measures were compared for three months in both groups. The speech recognition threshold, the air and bone conduction threshold, as well as the gap between them at 500 Hz, 1 KHz, 2 KHz and 4 KHz were measured. Results  Significant difference in bone conduction and SRT was observed when compared post- and preoperative results in the diode group. However diode and conventional technique groups presented significant differences in air conduction and air-bone gap, suggesting that both can provide functional improvement. Conclusion  Laser stapedotomy is a safe technique with good results. Both laser surgery and the conventional technique have improved the hearing of patients with a discreet advantage for the diode laser. Further prospective and randomized clinical trials are required to disclose all possible benefits of the stapes surgery using diode laser.

Polarization methods for diode laser excitation of solid state lasers

Science.gov (United States)

Holtom, Gary R.

2008-11-25

A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. A Yb-doped gain medium can be used that absorbs light having a first polarization and emits light having a second polarization. Using such pumping with laser cavity dispersion control, pulse durations of less than 100 fs can be achieved.

Electrical and optical response of a laser diode to transient ionizing radiation

International Nuclear Information System (INIS)

Baggio, J.; Brisset, C.; Sommer, J.L.; D'hose, C.; Lalande, P.; Leray, J.L.; Musseau, O.

1996-01-01

The authors have studied transient irradiation effects on the optical and electrical responses of a laser diode. The influence of dose rate, ranging from 10 9 to 10 12 rad(Si)/s, has been investigated through a complete experimental study. Dose rate vulnerability of the laser diode has been observed. Electrical and optical transient responses are determined by the dose rate, the diode structure, and its operating point

In-volume heating using high-power laser diodes

NARCIS (Netherlands)

Denisenkov, V.S.; Kiyko, V.V.; Vdovin, G.V.

2015-01-01

High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface

Spectral Characteristic Based on Fabry—Pérot Laser Diode with Two-Stage Optical Feedback

International Nuclear Information System (INIS)

Wu Jian-Wei; Nakarmi Bikash

2013-01-01

An optical device, consisting of a multi-mode Fabry—Pérot laser diode (MMFP-LD) with two-stage optical feedback, is proposed and experimentally demonstrated. The results show that the single-mode output with side-mode suppression ratio (SMSR) of ∼21.7 dB is attained by using the first-stage feedback. By using the second-stage feedback, the SMSR of single-mode operation could be increased to ∼28.5 dB while injection feedback power of −29 dBm is introduced into the laser diode. In the case of up to −29 dBm feedback power, the outcome SMSR is rapidly decayed to a very low level so that an obvious multi-mode operation in the output spectrum could be achieved at the feedback power level of −15.5 dBm. Thus, a transition between single- and multi-mode operations could be flexibly controlled by adjusting the injected power in the second-stage feedback system. Additionally, in the case of injection locking, the outcome SMSR and output power at the locked wavelength are as high as ∼50 dB and ∼5.8 dBm, respectively

Temperature evaluation of dental implant surface irradiated with high-power diode laser.

Science.gov (United States)

Rios, F G; Viana, E R; Ribeiro, G M; González, J C; Abelenda, A; Peruzzo, D C

2016-09-01

The prevalence of peri-implantitis and the absence of a standard approach for decontamination of the dental implant surface have led to searches for effective therapies. Since the source of diode lasers is portable, has reduced cost, and does not cause damage to the titanium surface of the implant, high-power diode lasers have been used for this purpose. The effect of laser irradiation on the implants is the elevation of the temperature surface. If this elevation exceeds 47 °C, the bone tissue is irreversibly damaged, so for a safety therapy, the laser parameters should be controlled. In this study, a diode laser of GaAsAl was used to irradiate titanium dental implants, for powers 1.32 to 2.64 W (real) or 2.00 to 4.00 W (nominal), in continuous/pulsed mode DC/AC, with exposure time of 5/10 s, with/without air flow for cooling. The elevation of the temperature was monitored in real time in two positions: cervical and apical. The best results for decontamination using a 968-nm diode laser were obtained for a power of 1.65 and 1.98 W (real) for 10 s, in DC or AC mode, with an air flow of 2.5 l/min. In our perspective in this article, we determine a suggested approach for decontamination of the dental implant surface using a 968-nm diode laser.

Optical pumping of Rb by Ti:Sa laser and high-power laser diode

Czech Academy of Sciences Publication Activity Database

Buchta, Zdeněk; Rychnovský, Jan; Lazar, Josef

2006-01-01

Roč. 8, č. 1 (2006), s. 350-354 ISSN 1454-4164 R&D Projects: GA AV ČR IAA1065303; GA ČR GA102/04/2109 Institutional research plan: CEZ:AV0Z20650511 Keywords : optical pumping * Ti:Sa laser * laser diode * emission linewidth * spectroscopy * laser frequency stabilization Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.106, year: 2006

Novel High Power Type-I Quantum Well Cascade Diode Lasers

Science.gov (United States)

2017-08-30

Novel High Power Type-I Quantum Well Cascade Diode Lasers The views, opinions and/or findings contained in this report are those of the author(s...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6... High Power Type-I Quantum Well Cascade Diode Lasers Report Term: 0-Other Email: leon.shterengas@stonybrook.edu Distribution Statement: 1-Approved

Dye-enhanced diode laser photocoagulation of choroidal neovascularizations

Science.gov (United States)

Klingbeil, Ulrich; Puliafito, Carmen A.; McCarthy, Dan; Reichel, Elias; Olk, Joseph; Lesiecki, Michael L.

1994-06-01

Dye-enhanced diode laser photocoagulation, using the dye indocyanine green (ICG), has shown some potential in the treatment of choroidal neovascularizations (CNV). A diode laser system was developed and optimized to emit at the absorption maximum of ICG. In a clinical study at two retinal centers, more than 70 patients, the majority of which had age-related macular degeneration, were treated. Eighteen cases with ill-defined subfoveal CNV were followed an average of 11 months after laser treatment. The results show success in resolving the CNV with an average long-term preservation of visual function equal to or superior to data provided by the Macular Photocoagulation Study for confluent burns of low intensity applied to the CNV. Details of the technique and discussion of the controversies inherent in such a treatment strategy will be presented.

Comparison of the effect of diode laser versus intense pulsed light in axillary hair removal.

Science.gov (United States)

Ormiga, Patricia; Ishida, Cleide Eiko; Boechat, Alvaro; Ramos-E-Silva, Marcia

2014-10-01

Devices such as diode laser and intense pulsed light (IPL) are in constant development aiming at permanent hair removal, but there are few comparative studies between these technologies. The objective was to comparatively assess axillary hair removal performed by diode laser and IPL and to obtain parameters of referred pain and evolution response for each method. A comparative prospective, double-blind, and randomized study of axillary hair removal performed by the diode laser and IPL was conducted in 21 females. Six sessions were held with application of the diode laser in one axilla and the IPL in the other, with intervals of 30 days and follow-up of 6 months after the last session. Clinical photographs and digital dermoscopy for hair counts in predefined and fixed fields of the treated areas were performed before, 2 weeks after the sixth session, and 6 months after the end of treatment. A questionnaire to assess the pain was applied. The number of hair shafts was significantly reduced with the diode laser and IPL. The diode laser was more effective, although more painful than the IPL. No serious, adverse, or permanent effects were observed with both technologies. Both diode laser and the IPL are effective, safe, and able to produce lasting results in axillary hair removal.

Mathematical modeling of a passively Q-switched diode laser

International Nuclear Information System (INIS)

Abdul Ghani, B.; Hammadi, M.

2009-11-01

A mathematical model describing the dynamic emission of the intracavity frequency doubling (IFD) of a gain-switched InGaAs/GaAs/KTP and a gain-switched mode-locked two-sections tapered ridge-waveguide InGaAs/GaAs diode laser has been presented. The IFD of a gain-switched and a gain-switched mode-locked two-sections diode laser is modeled where one section is electrically pumped to proved gain while the second section is unpumped (reverse biased) to provide a saturable absorber. (author)

Surgical performance of a 405-nm diode laser in treatment of soft tissue

International Nuclear Information System (INIS)

Kato, J; Akashi, G; Moriya, K; Hirai, Y; Hatayama, H; Inoue, A; Miyazaki, H

2008-01-01

The study was conducted to evaluate the surgical performance of a 405-nm diode laser ex vivo. The experiments were carried out using tuna tissue, which was irradiated with a 405-nm diode laser at output powers of 400 mW (694 W/cm 2 ) to 1 W (1735 W/cm 2 ) on a motorized stage moving at a rate of 1 mm/sec. As a control, a 920-nm diode laser was used with the same irradiation conditions. After irradiation, the thickness of ablation and coagulation was measured by stereoscopic microscopy and evaluated statistically. Ablation and coagulation zones were obtained with 405-nm laser irradiation, but not with irradiation at 920 nm. Ablation depth increased significantly with output power and a thick coagulation zone was observed with 405-nm irradiation. The 405-nm diode laser performed well for incising and coagulating soft tissue at a low power density

Improving the beam quality of high-power laser diodes by introducing lateral periodicity into waveguides

Science.gov (United States)

Sobczak, Grzegorz; DÄ browska, ElŻbieta; Teodorczyk, Marian; Kalbarczyk, Joanna; MalÄ g, Andrzej

2013-01-01

Low quality of the optical beam emitted by high-power laser diodes is the main disadvantage of these devices. The two most important reasons are highly non-Gaussian beam profile with relatively wide divergence in the junction plane and the filamentation effect. Designing laser diode as an array of narrow, close to each other single-mode waveguides is one of the solutions to this problem. In such devices called phase locked arrays (PLA) there is no room for filaments formation. The consequence of optical coupling of many single-mode waveguides is the device emission in the form of few almost diffraction limited beams. Because of losses in regions between active stripes the PLA devices have, however, somewhat higher threshold current and lower slope efficiencies compared to wide-stripe devices of similar geometry. In this work the concept of the high-power laser diode resonator consisted of joined PLA and wide stripe segments is proposed. Resulting changes of electro-optical characteristics of PLA are discussed. The devices are based on the asymmetric heterostructure designed for improvement of the catastrophic optical damage threshold as well as thermal and electrical resistances. Due to reduced distance from the active layer to surface in this heterostructure, better stability of current (and gain) distribution with changing drive level is expected. This could lead to better stability of optical field distribution and supermodes control. The beam divergence reduction in the direction perpendicular of the junction plane has been also achieved.

Diode-pumped laser with improved pumping system

Science.gov (United States)

Chang, Jim J.

2004-03-09

A laser wherein pump radiation from laser diodes is delivered to a pump chamber and into the lasing medium by quasi-three-dimensional compound parabolic concentrator light channels. The light channels have reflective side walls with a curved surface and reflective end walls with a curved surface. A flow tube between the lasing medium and the light channel has a roughened surface.

Efficient Ho:LuLiF4 laser diode-pumped at 1.15 μm.

Science.gov (United States)

Wang, Sheng-Li; Huang, Chong-Yuan; Zhao, Cheng-Chun; Li, Hong-Qiang; Tang, Yu-Long; Yang, Nan; Zhang, Shuai-Yi; Hang, Yin; Xu, Jian-Qiu

2013-07-15

We report the first laser operation based on Ho(3+)-doped LuLiF(4) single crystal, which is directly pumped with 1.15-μm laser diode (LD). Based on the numerical model, it is found that the "two-for-one" effect induced by the cross-relaxation plays an important role for the laser efficiency. The maximum continuous wave (CW) output power of 1.4 W is produced with a beam propagation factor of M(2) ~2 at the lasing wavelength of 2.066 μm. The slope efficiency of 29% with respect to absorbed power is obtained.

Recent progress in diode-pumped mid-infrared vibronic solid-state lasers

International Nuclear Information System (INIS)

Sorokina, I.T.; Sorokin, E.; Mirov, S.; Schaffers, K.

2002-01-01

Full text: The last few years were marked by the increased interest of researchers towards the new class of transition-metal doped zinc chalcogenides. In particular Cr:ZnSe attracts a lot of attention as broadly tunable continuous-wave (cw), mode-locked and diode-pumped lasers operating around 2.5 mm. This interest is explained by the absence of other comparable tunable room-temperature laser sources in this spectral region. However, another member of the II-VI compounds family Cr:ZnS, has yet remained barely studied as a laser medium. Recently we demonstrated the first continuous-wave room-temperature tunable over more than 280 nm around 2.3 μm Cr 2+ :ZnS laser, pumped with a Co:MgF2 laser and yielding over 100 mW of output power. The most recent result is the development of a compact tunable over 700 nm continuous-wave room-temperature Cr 2+ :ZnS laser, pumped by the diode-pumped Er-fiber laser at 1.6 μm and generating 0.7 W of the linearly polarized radiation. We also demonstrated direct diode-pumping at 1.6 μm of the Cr 2+ :ZnS. Although the Cr:ZnS exhibited lower (relatively to the Cr:ZnSe) efficiency and output power due to the higher passive losses of the available Cr:ZnS samples, the analysis of the spectroscopic and laser data indicates the high potential of Cr:ZnS for compact broadly tunable mid-infrared systems, as well as for high power applications. The physics of the novel diode-pumped laser systems is highly interesting. It comprises the features of the ion-doped dielectric crystalline lasers and semiconductors. For example, we observe in these media, for the first time to our knowledge, a new nonlinear phenomenon, which is analogous to the opto-optical switching process, where the laser output of the diode-pumped continuous-wave Cr:ZnSe and Cr:ZnS lasers around 2.5 μm is modulated by only a few milliwatt of the visible (470-500 nm) and near-infrared radiation (740-770 nm). We present a physical explanation of the observed effect. Refs. 4 (author)

Investigation of mode partition noise in Fabry-Perot laser diode

Science.gov (United States)

Guo, Qingyi; Deng, Lanxin; Mu, Jianwei; Li, Xun; Huang, Wei-Ping

2014-09-01

Passive optical network (PON) is considered as the most appealing access network architecture in terms of cost-effectiveness, bandwidth management flexibility, scalability and durability. And to further reduce the cost per subscriber, a Fabry-Perot (FP) laser diode is preferred as the transmitter at the optical network units (ONUs) because of its lower cost compared to distributed feedback (DFB) laser diode. However, the mode partition noise (MPN) associated with the multi-longitudinal-mode FP laser diode becomes the limiting factor in the network. This paper studies the MPN characteristics of the FP laser diode using the time-domain simulation of noise-driven multi-mode laser rate equation. The probability density functions are calculated for each longitudinal mode. The paper focuses on the investigation of the k-factor, which is a simple yet important measure of the noise power, but is usually taken as a fitted or assumed value in the penalty calculations. In this paper, the sources of the k-factor are studied with simulation, including the intrinsic source of the laser Langevin noise, and the extrinsic source of the bit pattern. The photon waveforms are shown under four simulation conditions for regular or random bit pattern, and with or without Langevin noise. The k-factors contributed by those sources are studied with a variety of bias current and modulation current. Simulation results are illustrated in figures, and show that the contribution of Langevin noise to the k-factor is larger than that of the random bit pattern, and is more dominant at lower bias current or higher modulation current.

Three hundred patients treated with ultrapulsed 980 nm diode laser for skin disorders

Directory of Open Access Journals (Sweden)

Uwe Wollina

2016-01-01

Full Text Available The use of lasers in skin diseases is quite common. In contrast to other laser types, medical literature about 980 nm ultrapulsed diode laser is sparse in dermatology. Herein, we report the use of ultrapulsed diode 980 nm laser in 300 patients with vascular lesions, cysts and pseudocysts, infectious disease, and malignant tumors. This laser is a versatile tool with excellent safety and efficacy in the hands of the experienced user.

Three Hundred Patients Treated with Ultrapulsed 980 nm Diode Laser for Skin Disorders

Science.gov (United States)

Wollina, Uwe

2016-01-01

The use of lasers in skin diseases is quite common. In contrast to other laser types, medical literature about 980 nm ultrapulsed diode laser is sparse in dermatology. Herein, we report the use of ultrapulsed diode 980 nm laser in 300 patients with vascular lesions, cysts and pseudocysts, infectious disease, and malignant tumors. This laser is a versatile tool with excellent safety and efficacy in the hands of the experienced user. PMID:27688445

Modulation of Frequency Doubled DFB-Tapered Diode Lasers for Medical Treatment

DEFF Research Database (Denmark)

Christensen, Mathias; Hansen, Anders Kragh; Noordegraaf, Danny

2017-01-01

have demonstrated power modulation from 0.1 Hz to 10 kHz at 532 nm with a modulation depth above 97% by wavelength detuning of the laser diode. The laser diode is a 1064 nm monolithic device with a distributed feedback (DFB) laser as the master oscillator (MO), and a tapered power amplifier (PA......). The MO and PA have separate electrical contacts and the modulation is achieved with wavelength tuning by adjusting the current through the MO 40 mA....

Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

International Nuclear Information System (INIS)

Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

1994-01-01

The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

Free space broad-bandwidth tunable laser diode based on Littman configuration for 3D profile measurement

Science.gov (United States)

Shirazi, Muhammad Faizan; Kim, Pilun; Jeon, Mansik; Kim, Chang-Seok; Kim, Jeehyun

2018-05-01

We developed a tunable laser diode for an optical coherence tomography system that can perform three-dimensional profile measurement using an area scanning technique. The tunable laser diode is designed using an Eagleyard tunable laser diode with a galvano filter. The Littman free space configuration is used to demonstrate laser operation. The line- and bandwidths of this source are 0.27 nm (∼110 GHz) and 43 nm, respectively, at the center wavelength of 860 nm. The output power is 20 mW at an operating current of 150 mA. A step height target is imaged using a wide-area scanning system to show the measurement accuracy of the proposed tunable laser diode. A TEM grid is also imaged to measure the topography and thickness of the sample by proposed tunable laser diode.

Two-wavelength, passive self-injection-controlled operation of diode-pumped cw Yb-doped crystal lasers.

Science.gov (United States)

Louyer, Yann; Wallerand, Jean-Pierre; Himbert, Marc; Deneva, Margarita; Nenchev, Marin

2003-09-20

We demonstrate and investigate a peculiar mode of cw Yb3+-doped crystal laser operation when two emissions, at two independently tunable wavelengths, are simultaneously produced. Both emissions are generated from a single pumped volume and take place in either a single beam or spatially separated beams. The laser employs original two-channel cavities that use a passive self-injection-locking (PSIL) control to reduce intracavity loss. The advantages of the application of the PSIL technique and some limitations are shown. The conditions for two-wavelength multimode operation of the cw quasi-three-level diode-pumped Yb3+ lasers and the peculiarity of such an operation are carried out both theoretically and experimentally. The results reported are based on the example of a Yb3+:GGG laser but similar results are also obtained with a Yb3+:YAG laser. The laser operates in the 1023-1033-nm (1030-1040-nm) range with a total output power of 0.4 W. A two-wavelength, single longitudinal mode generation is also obtained.

Diode Laser and Calcium Hydroxide for Elimination of Enterococcus Faecalis in Root Canal

Directory of Open Access Journals (Sweden)

Neda Naghavi

2014-06-01

Full Text Available Introduction: The ultimate goal of endodontic treatment is to eliminate the bacterial infection in the root canal system. While mechanical debridement combined with chemical irrigation removes the bulk of microorganisms, residual bacteria are readily detectable in approximately one-half of teeth just prior to obturation. Laser light can be used to destroy bacteria. This in vitro study was performed to evaluate the effect of diode laser and calcium hydroxide on mono-infected dental canals.Methods: Fifty five single-rooted human premolars were prepared and contaminated with Enterococcus faecalis. After three weeks of incubation, the samples were divided into three experimental groups (n = 15 and two control groups (n = 5. In the first and second groups, the teeth were rinsed for 5 min with either sterile saline or 5.25% NaOCl and irradiated with a 810-nm diode laser at 1.5 W output for 5 × 4s. In the third group, the teeth were rinsed with 5.25% NaOCl and then Ca(OH2 paste was inserted in the canals for 1 week. Intracanal bacterial sampling was done and the samples were plated to determine the CFU count. Results: 5.25% NaOCl plus laser was as effective as calcium hydroxide and significantly more effective than sterile saline (P>0.05 in elimination of E. faecalis. Complete elimination of E. faecalis was seen only for the one week calcium hydroxide treatment. Conclusion: Combination therapy with NaOCl irrigation and diode laser irradiation can be recommended as an effective treatment option for elimination of E. faecalis from the root canal system.

Cavity-Enhanced Raman Spectroscopy of Natural Gas with Optical Feedback cw-Diode Lasers.

Science.gov (United States)

Hippler, Michael

2015-08-04

We report on improvements made on our previously introduced technique of cavity-enhanced Raman spectroscopy (CERS) with optical feedback cw-diode lasers in the gas phase, including a new mode-matching procedure which keeps the laser in resonance with the optical cavity without inducing long-term frequency shifts of the laser, and using a new CCD camera with improved noise performance. With 10 mW of 636.2 nm diode laser excitation and 30 s integration time, cavity enhancement achieves noise-equivalent detection limits below 1 mbar at 1 bar total pressure, depending on Raman cross sections. Detection limits can be easily improved using higher power diodes. We further demonstrate a relevant analytical application of CERS, the multicomponent analysis of natural gas samples. Several spectroscopic features have been identified and characterized. CERS with low power diode lasers is suitable for online monitoring of natural gas mixtures with sensitivity and spectroscopic selectivity, including monitoring H2, H2S, N2, CO2, and alkanes.

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

Science.gov (United States)

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Thermal imaging of high power diode lasers subject to back-irradiance

Science.gov (United States)

Li, C.; Pipe, K. P.; Cao, C.; Thiagarajan, P.; Deri, R. J.; Leisher, P. O.

2018-03-01

CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying the relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.

Cascade Type-I Quantum Well GaSb-Based Diode Lasers

Directory of Open Access Journals (Sweden)

Leon Shterengas

2016-05-01

Full Text Available Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an ~100-μm-wide aperture and a 3-mm-long cavity demonstrated continuous wave (CW output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at 17–20 °C—a nearly or more than twofold increase compared to previous state-of-the-art diode lasers. The utilization of the different quantum wells in the cascade laser heterostructure was demonstrated to yield wide gain lasers, as often desired for tunable laser spectroscopy. Double-step etching was utilized to minimize both the internal optical loss and the lateral current spreading penalties in narrow-ridge lasers. Narrow-ridge cascade diode lasers operate in a CW regime with ~100 mW of output power near and above 3 μm and above 150 mW near 2 μm.

Turn-on delay of QD and QW laser diodes: What is the difference?

International Nuclear Information System (INIS)

Sokolovskii, G S; Dudelev, V V; Kolykhalova, E D; Deryagin, A G; Maximov, M V; Nadtochiy, A M; Kuchinskii, V I; Mikhrin, S S; Livshits, D A; Viktorov, E A; Erneux, T

2013-01-01

Turn-on delay of laser diodes with quantum-sized active media is investigated both theoretically and experimentally. In this research we show the striking difference in turn-on delay of quantum dot and quantum well laser diodes: With quantum-well lasers turn on delay tends to zero in the limit of high pumping, while with quantum dot lasers turn-on delay has the non-vanishing component which is independent of pumping

Eye safe high power laser diode in the 1410-1550nm range

Science.gov (United States)

Boucart, Julien; de Largy, Brian; Kearley, Mark; Lichtenstein, Norbert

2010-02-01

The demand for high power lasers emitting in the 14xx-15xxnm range is growing for applications in fields such as medical or homeland security. We demonstrate high power laser diodes with emission at 1430, 1470 and 1560 nm. Single multimode emitters at 1470nm emit about 3.5W in CW operation. Power conversion efficiency can reach values as high as 38.5%. With this base material, single and multi-emitter fiber coupled modules are built. Additionally, bars on passive and microchannel coolers are fabricated that deliver 25W and 38W respectively in CW mode, while obtaining more than 80 W in pulsed mode. All reliability tests show an outstanding stability of the material with no signs of wearout after 3750 hrs under strong acceleration conditions.

Bactericidal effect of a 405-nm diode laser on Porphyromonas gingivalis

Energy Technology Data Exchange (ETDEWEB)

Kotoku, Y; Kato, J; Akashi, G; Hirai, Y [Department of Operative Dentistry, Tokyo Dental College, 1-2-2, Masago, Mihama-ku, Chiba, 261-8502 (Japan); Ishihara, K [Department of Microbiology, Tokyo Dental College, 1-2-2, Masago, Mihama-ku, Chiba, 261-8502 (Japan)

2009-05-15

The study was conducted to determine the effect of 405-nm diode laser irradiation on periodontopathic bacteria such as Porphyromonas gingivalis in vitro. A diluted suspension of P. gingivalis was irradiated directly with a 405-nm diode laser under conditions of 100 mW-10 sec, 100 mW-20 sec, 200 mW-5 sec, 200 mW-10 sec, 200 mW-20 sec, 400 mW-5 sec, 400 mW-10 sec, and 400 mW-20 sec. The energy density ranged from 2.0 to 16.0 J/cm{sup 2}. The irradiated bacterial suspension was spread on a blood agar plate and growth of the colonies was examined after an anaerobic culture for 7 days. Bacterial growth was inhibited under all irradiation conditions, but the bactericidal effect of the 405-nm diode laser depended on the energy density. More than 97% of bacterial growth was inhibited with irradiation at an energy density > 4.0 J/cm{sup 2}. The mechanism of the bactericidal effect is photochemical, rather than photothermal. These findings suggest that a 405-nm diode laser has a high bactericidal effect on P. gingivalis.

Bactericidal effect of a 405-nm diode laser on Porphyromonas gingivalis

International Nuclear Information System (INIS)

Kotoku, Y; Kato, J; Akashi, G; Hirai, Y; Ishihara, K

2009-01-01

The study was conducted to determine the effect of 405-nm diode laser irradiation on periodontopathic bacteria such as Porphyromonas gingivalis in vitro. A diluted suspension of P. gingivalis was irradiated directly with a 405-nm diode laser under conditions of 100 mW-10 sec, 100 mW-20 sec, 200 mW-5 sec, 200 mW-10 sec, 200 mW-20 sec, 400 mW-5 sec, 400 mW-10 sec, and 400 mW-20 sec. The energy density ranged from 2.0 to 16.0 J/cm 2 . The irradiated bacterial suspension was spread on a blood agar plate and growth of the colonies was examined after an anaerobic culture for 7 days. Bacterial growth was inhibited under all irradiation conditions, but the bactericidal effect of the 405-nm diode laser depended on the energy density. More than 97% of bacterial growth was inhibited with irradiation at an energy density > 4.0 J/cm 2 . The mechanism of the bactericidal effect is photochemical, rather than photothermal. These findings suggest that a 405-nm diode laser has a high bactericidal effect on P. gingivalis

Bactericidal effect of a 405-nm diode laser on Porphyromonas gingivalis

Science.gov (United States)

Kotoku, Y.; Kato, J.; Akashi, G.; Hirai, Y.; Ishihara, K.

2009-05-01

The study was conducted to determine the effect of 405-nm diode laser irradiation on periodontopathic bacteria such as Porphyromonas gingivalis in vitro. A diluted suspension of P. gingivalis was irradiated directly with a 405-nm diode laser under conditions of 100 mW-10 sec, 100 mW-20 sec, 200 mW-5 sec, 200 mW-10 sec, 200 mW-20 sec, 400 mW-5 sec, 400 mW-10 sec, and 400 mW-20 sec. The energy density ranged from 2.0 to 16.0 J/cm2. The irradiated bacterial suspension was spread on a blood agar plate and growth of the colonies was examined after an anaerobic culture for 7 days. Bacterial growth was inhibited under all irradiation conditions, but the bactericidal effect of the 405-nm diode laser depended on the energy density. More than 97% of bacterial growth was inhibited with irradiation at an energy density > 4.0 J/cm2. The mechanism of the bactericidal effect is photochemical, rather than photothermal. These findings suggest that a 405-nm diode laser has a high bactericidal effect on P. gingivalis.

Orofacial lymphatic malformation: management with a three steps diode laser protocol

Science.gov (United States)

Miccoli, Simona; Tempesta, Angela; Limongelli, Luisa; Caporusso, Concetta; Di Venere, Daniela; Petruzzi, Massimo; Lacaita, Mariagrazia; Maiorano, Eugenio; Favia, Gianfranco

2014-01-01

Lymphatic Malformation (LM) according to ISSVA Classification, is a rare benign disorder with unknown aetiology. LM may grow slowly over years or develop rapidly over the course of days becoming a bulky lump, infected or bleeding. We propose our three steps Diode Laser protocol for LM management, based on its persistent vascular blood component. 1. Histological and cytological examination, to evaluate the vascular blood component (10-40%), shows mature lymphocytes with red blood cells and endothelial cells. 2. Diode Laser Photocoagulation (DLP) in pulsed mode (on 100ms / off 400ms) at 10W and 800nm with a 300μm fibre kept 2-3mm from the tissues, to reduce the lesion. 3. Diode Laser surgical excision in pulsed mode (on 50ms / off 200ms) at 8W and 800nm with a 300 μm fibre in close contact with tissues, and histological intraoperative margins control on frozen sections. Even if it has inconstant results (lesions decreasing rate is 10% to 40% proportionally to vascular blood component), DLP simplifies the last and the most important step. Use of Diode Laser also in surgical excision reduces intra and postoperatory complications.

Laser diodes for sensing applications: adaptive cruise control and more

Science.gov (United States)

Heerlein, Joerg; Morgott, Stefan; Ferstl, Christian

2005-02-01

Adaptive Cruise Controls (ACC) and pre-crash sensors require an intelligent eye which can recognize traffic situations and deliver a 3-dimensional view. Both microwave RADAR and "Light RADAR" (LIDAR) systems are well suited as sensors. In order to utilize the advantages of LIDARs -- such as lower cost, simpler assembly and high reliability -- the key component, the laser diode, is of primary importance. Here, we present laser diodes which meet the requirements of the automotive industry.

High-Power 1180-nm GaInNAs DBR Laser Diodes

DEFF Research Database (Denmark)

Aho, Antti T.; Viheriala, Jukka; Korpijarvi, Ville-Markus

2017-01-01

We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. The diodes exhibited narrow linewidth emission with side...... and better carrier confinement compared with traditional GaInAs quantum wells. The development opens new opportunities for the power scaling of frequency-doubled lasers with emission at yellow-orange wavelengths....

Efficient second harmonic generation of a diode-laser-pumped CW Nd:YAG laser using monolithic MgO:LiNbO3 external resonant cavities

Science.gov (United States)

Kozlovsky, William J.; Nabors, C. D.; Byer, Robert L.

1988-01-01

56-percent efficient external-cavity-resonant second-harmonic generation of a diode-laser pumped, CW single-axial-mode Nd:YAG laser is reported. A theory of external doubling with a resonant fundamental is presented and compared to experimental results for three monolithic cavities of nonlinear MgO:LiNbO3. The best conversion efficiency was obtained with a 12.5-mm-long monolithic ring cavity doubler, which produced 29.7 mW of CW, single-axial model 532-nm radiation from an input of 52.5 mW.

Red and orange laser operation of Pr:KYF4 pumped by a Nd:YAG/LBO laser at 469.1 nm and a InGaN laser diode at 444 nm.

Science.gov (United States)

Xu, B; Starecki, F; Pabœuf, D; Camy, P; Doualan, J L; Cai, Z P; Braud, A; Moncorgé, R; Goldner, Ph; Bretenaker, F

2013-03-11

We report the basic luminescence properties and the continuous-wave (CW) laser operation of a Pr(3+)-doped KYF(4) single crystal in the Red and Orange spectral regions by using a new pumping scheme. The pump source is an especially developed, compact, slightly tunable and intra-cavity frequency-doubled diode-pumped Nd:YAG laser delivering a CW output power up to about 1.4 W around 469.1 nm. At this pump wavelength, red and orange laser emissions are obtained at about 642.3 and 605.5 nm, with maximum output powers of 11.3 and 1 mW and associated slope efficiencies of 9.3% and 3.4%, with respect to absorbed pump powers, respectively. For comparison, the Pr:KYF(4) crystal is also pumped by a InGaN blue laser diode operating around 444 nm. In this case, the same red and orange lasers are obtained, but with maximum output powers of 7.8 and 2 mW and the associated slope efficiencies of 7 and 5.8%, respectively. Wavelength tuning for the two lasers is demonstrated by slightly tilting the crystal. Orange laser operation and laser wavelength tuning are reported for the first time.

Amorphous structure evolution of high power diode laser cladded Fe–Co–B–Si–Nb coatings

International Nuclear Information System (INIS)

Zhu Yanyan; Li Zhuguo; Huang Jian; Li Min; Li Ruifeng; Wu Yixiong

2012-01-01

Highlights: ► Fabricated amorphous composited coating by high power diode laser cladding with single track. ► Lower dilution and higher scanning speed are desired to obtain higher amorphous phase fraction. ► White spots phase with high content of Nb embedded in the amorphous matrix. - Abstract: Fe–Co–B–Si–Nb coatings were fabricated on the surface of low carbon steel using high power diode laser cladding of [(Fe 0.5 Co 0.5 ) 0.75 B 0.2 Si 0.05 ] 95.7 Nb 4.3 amorphous powders at three different scanning speeds of 6, 17 and 50 m/s. At each scanning speed, laser power was optimized to obtain low dilution ratio. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy with energy dispersive spectrometer and electron probe micro analysis were carried out to characterize the microstructure and chemical composition of the cladded coatings. Differential scanning calorimetry was also carried out to investigate the fraction of the amorphous phase. The results showed that dilution ratio and scanning speed were the two main factors for fabricating Fe–Co–B–Si–Nb amorphous coating by high power diode laser cladding. Low dilution ratio was crucial for the formation of amorphous phase. When the dilution ratio was low, the fraction of amorphous phase in the cladded coatings increased upon increasing the scanning speed.

303 nm continuous wave ultraviolet laser generated by intracavity frequency-doubling of diode-pumped Pr3+:LiYF4 laser

Science.gov (United States)

Zhu, Pengfei; Zhang, Chaomin; Zhu, Kun; Ping, Yunxia; Song, Pei; Sun, Xiaohui; Wang, Fuxin; Yao, Yi

2018-03-01

We demonstrate an efficient and compact ultraviolet laser at 303 nm generated by intracavity frequency doubling of a continuous wave (CW) laser diode-pumped Pr3+:YLiF4 laser at 607 nm. A cesium lithium borate (CLBO) crystal, cut for critical type I phase matching at room temperature, is used for second-harmonic generation (SHG) of the fundamental laser. By using an InGaN laser diode array emitting at 444.3 nm with a maximum incident power of 10 W, as high as 68 mW of CW output power at 303 nm is achieved. The output power stability in 4 h is better than 2.85%. To the best of our knowledge, this is high efficient UV laser generated by frequency doubling of an InGaN laser diode array pumped Pr3+:YLiF4 laser.

Quantitative pump-induced wavefront distortions in laser-diode- and flash-lamp-pumped Nd:YLF laser rods

International Nuclear Information System (INIS)

Skeldon, M.D.; Saager, R.B.; Seka, W.

1999-01-01

Detailed interferometric measurements of the induced thermal distortions due to laser-diode and xenon flashlamp pumping of Nd:YLF are presented. The thermal distortions are quantified in terms of the primary aberrations of defocus, astigmatism, coma, and spherical. Defocus and astigmatism are shown to dominate the thermal aberrations. The measured defocus and astigmatism are converted to the conventional thermal-focal lengths in two perpendicular directions with respect to the Nd:YLF crystalline c axis for each of the two polarization states σ and π. A comparison of the thermal-focal lengths measured with the xenon flashlamp- and laser-diode-pumped rods is given when the rods are pumped to the same small-signal gain. The authors calculate effective dioptric-power coefficients from the data for comparison to those reported in the literature for krypton-flashlamp pumping. A thermal-time constant of 1.5 s is measured for the laser-diode-pumped Nd:YLF laser rod

Analysis of High-Power Diode Laser Heating Effects on HY-80 Steel for Laser Assisted Friction Stir Welding Applications

Energy Technology Data Exchange (ETDEWEB)

Wiechec, Maxwell; Baker, Brad; McNelley, Terry; Matthews, Manyalibo; Rubenchik, Alexander; Rotter, Mark; Beach, Ray; Wu, Sheldon

2017-01-01

In this research, several conditions of high power diode laser heated HY-80 steel were characterized to determine the viability of using such lasers as a preheating source before friction stir welding in order to reduce frictional forces thereby reducing tool wear and increasing welding speeds. Differences in microstructures within heat affected zones were identified at specific laser powers and traverse speeds. Vickers hardness values were recorded and analyzed to validate the formation of additional martensite in diode laser heated regions of HY-80 steel. Conditions that produced little to no additional martensite were identified and relationships among high power diode laser power, traverse speed, and martensite formation were determined. The development of heat affected zones, change in grain structure, and creation of additional martensite in HY-80 can be prevented through the optimization of laser amperage and transverse speed.

Efficacy of diode laser (810 and 940 nm) for facial skin tightening.

Science.gov (United States)

Voravutinon, Nataya; Seawthaweesin, Kanikar; Bureethan, Apron; Srivipatana, Anchisa; Vejanurug, Patnapa

2015-12-01

Laser treatment has been introduced for facial skin tightening. However, no prior study has used a diode laser to treat facial skin laxity. To evaluate the efficacy and safety of a 810- and 940-nm diode laser (MeDioStarNeXT) for treating facial skin laxity. Thirty patients, with facial skin laxity grading scale II-IV, were enrolled in this study. Each patient underwent four sessions with a 810- and 940-nm diode laser (MeDioStarNeXT) treatment over 3-week intervals. Improvement in the laxity of facial skin was evaluated using a Cutometer MPA 580, spectrophotometer, and a grading scale. Significant improvement was observed with the Cutometer F3 and R7 parameters at 1 and 3 months after complete treatment, respectively. Physician assessment showed significant improvement in the laxity scale at 1 and 6 months after treatment. Approximately 10% of the patients reported mild pain or minor adverse events. Ninety-eight percent of the patients were satisfied with the treatments. Treatment with a diode laser (810 and 940 nm) is safe and may be effective for facial skin tightening. Maintenance treatment is necessary to sustain the effect of treatment. © 2015 Wiley Periodicals, Inc.

Single frequency Nd:YLF and Nd:YVO4 laser in the red emission

International Nuclear Information System (INIS)

Camargo, Fabiola de Almeida

2010-01-01

All solid-state continuous-wave (cw) narrow emission linewidth and tunable red lasers are convenient alternative sources to bulky and expensive dye-lasers for high precision laser spectroscopy. Single-frequency operation of diode-pumped Nd:YLiF 4 and Nd:YVO 4 cw ring lasers were investigated in the 1.32 - 1.34μm range, together with their intracavity second-harmonic generation (SHG) to the red spectral range (0.65 - 0.67μm) using either BiB 3 O 6 (BiBO) or periodically-poled KTiOPO 4 (ppKTP) crystals. We report on such a single-end diode-pumped Nd:YVO 4 unidirectional red ring laser containing a type-I cut BiBO nonlinear crystal, yielding a record of 680 mW of single-longitudinal mode (SLM) red output power at 671.1nm without any intra-cavity etalon. For smooth SLM wavelength tuning over the full gain bandwidth (∼4 nm), a partially-coated (R = 40%) 100μm-thin etalon was found necessary, reducing the maximum SLM power (at 671.15 nm) to 380 mW. At 1342.5nm and with a T = 2% transmission output coupler, the laser provided an optimal 1.5W of single-frequency power. We demonstrate also optimal intracavity SHG of a Nd:YLF ring laser in the π- polarization (λ = 1321.5nm) using a ppKTP. The laser yielded 1.4 W of single frequency red power at 660.5 nm, as much as the maximum fundamental power that can be extracted from the resonator using an optimal output coupler. With a partially coated (R = 25%) thin etalon, the laser was tunable over Δλ∼ 1.6nm. (author)

[Laservaporization of the prostate: current status of the greenlight and diode laser].

Science.gov (United States)

Rieken, M; Bachmann, A; Gratzke, C

2013-03-01

In the last decade laser vaporization of the prostate has emerged as a safe and effective alternative to transurethral resection of the prostate (TURP). This was facilitated in particular by the introduction of photoselective vaporization of the prostate (PVP) with a 532 nm 80 W KTP laser in 2002. Prospective randomized trials comparing PVP and TURP with a maximum follow-up of 3 years mostly demonstrated comparable functional results. Cohort studies showed a safe application of PVP in patients under oral anticoagulation and with large prostates. Systems from various manufacturers with different maximum power output and wavelengths are now available for diode laser vaporization of the prostate. Prospective randomized trials comparing diode lasers and TURP are not yet available. In cohort studies and comparative studies PVP diode lasers are characterized by excellent hemostatic properties but functional results vary greatly with some studies reporting high reoperation rates.

Molecular-beam epitaxy growth of high-performance midinfrared diode lasers

International Nuclear Information System (INIS)

Turner, G.W.; Choi, H.K.; Calawa, D.R.

1994-01-01

Recent advances in the performance of GaInAsSb/AlGaAsSb quantum-well diode lasers have been directly related to improvements in the quality of the molecular-beam epitaxy (MBE)-grown epitaxial layers. These improvements have been based on careful measurement and control of lattice matching and intentional strain, changes in shutter sequencing at interfaces, and a generally better understanding of the growth of Sb-based epitaxial materials. By using this improved MBE-grown material, significantly enhanced performance has been obtained for midinfrared lasers. These lasers, which are capable of ∼2-μm emission at room temperature, presently exhibit threshold current densities of 143 A/cm 2 , continuous wave powers of 1.3 W, and diffraction-limited powers of 120 mW. Such high-performance midinfrared diode lasers are of interest for a wide variety of applications, including eye-safe laser radar, remote sensing of atmospheric contaminants and wind turbulence, laser surgery, and pumping of solid-state laser media. 12 refs., 3 figs

Management of Chronic Periodontitis Using Chlorhexidine Chip and Diode Laser-A Clinical Study.

Science.gov (United States)

Jose, Kachapilly Arun; Ambooken, Majo; Mathew, Jayan Jacob; Issac, Annie Valayil; Kunju, Ajithkumar Parachalil; Parameshwaran, Renjith Athirkandathil

2016-04-01

The use of adjuncts like chlorhexidine local delivery and diode laser decontamination have been found to improve the clinical outcomes of scaling and root planing in non-surgical periodontal therapy in patients with chronic periodontitis. To evaluate the effects of diode laser and chlorhexidine chip as adjuncts to scaling and root planing in the management of chronic periodontitis. The objective is to evaluate the outcome of chlorhexidine chip and diode laser as adjuncts to scaling and root planing on clinical parameters like Plaque Index, Gingival Index, probing pocket depth and clinical attachment level. Department of Periodontics. Randomized clinical trial with split mouth design. Fifteen chronic periodontitis patients having a probing pocket depth of 5mm-7mm on at least one interproximal site in each quadrant of the mouth were included in the study. After initial treatment, four sites in each patient were randomly subjected to scaling and root planing (control), chlorhexidine chip application (CHX chip group), diode laser (810 nm) decontamination (Diode laser group) or combination of both (Diode laser and chip group). Plaque Index (PI), Gingival Index (GI), probing pocket depth (PPD) and clinical attachment level (CAL) were assessed at baseline, one month and three months. Results were statistically analysed using paired T test, one-way ANOVA, Tukey's HSD test and repeated measure ANOVA. Post-treatment, the test and control sites showed a statistically significant reduction in PI, GI, PPD, and CAL. After three months, a mean PPD reduction of 1.47±0.52 mm in control group, 1.40±0.83 mm in diode laser group, 2.67±0.62 mm in CHX group, and 2.80± 0.77 mm in combination group was seen. The mean gain in CAL were 1.47±0.52 mm in the control group, 1.40±0.83 mm in diode laser group, 2.67± 0.49 mm in CHX group and 2.67± 0.82 mm in combination group respectively. The differences in PPD reduction and CAL gain between control group and CHX chip and combination

Management of Chronic Periodontitis Using Chlorhexidine Chip and Diode Laser-A Clinical Study

Science.gov (United States)

Ambooken, Majo; Mathew, Jayan Jacob; Issac, Annie Valayil; Kunju, Ajithkumar Parachalil; Parameshwaran, Renjith Athirkandathil

2016-01-01

Introduction The use of adjuncts like chlorhexidine local delivery and diode laser decontamination have been found to improve the clinical outcomes of scaling and root planing in non-surgical periodontal therapy in patients with chronic periodontitis. Aim To evaluate the effects of diode laser and chlorhexidine chip as adjuncts to scaling and root planing in the management of chronic periodontitis. The objective is to evaluate the outcome of chlorhexidine chip and diode laser as adjuncts to scaling and root planing on clinical parameters like Plaque Index, Gingival Index, probing pocket depth and clinical attachment level. Study and Design Department of Periodontics. Randomized clinical trial with split mouth design. Materials and Methods Fifteen chronic periodontitis patients having a probing pocket depth of 5mm-7mm on at least one interproximal site in each quadrant of the mouth were included in the study. After initial treatment, four sites in each patient were randomly subjected to scaling and root planing (control), chlorhexidine chip application (CHX chip group), diode laser (810 nm) decontamination (Diode laser group) or combination of both (Diode laser and chip group). Plaque Index (PI), Gingival Index (GI), probing pocket depth (PPD) and clinical attachment level (CAL) were assessed at baseline, one month and three months. Statistical analysis Results were statistically analysed using paired T test, one-way ANOVA, Tukey’s HSD test and repeated measure ANOVA. Results Post-treatment, the test and control sites showed a statistically significant reduction in PI, GI, PPD, and CAL. After three months, a mean PPD reduction of 1.47±0.52 mm in control group, 1.40±0.83 mm in diode laser group, 2.67±0.62 mm in CHX group, and 2.80± 0.77 mm in combination group was seen. The mean gain in CAL were 1.47±0.52 mm in the control group, 1.40±0.83 mm in diode laser group, 2.67± 0.49 mm in CHX group and 2.67± 0.82 mm in combination group respectively. The

Microring Diode Laser for THz Generation

DEFF Research Database (Denmark)

Mariani, S.; Andronico, A.; Favero, I.

2013-01-01

We report on the modeling and optical characterization of AlGaAs/InAs quantum-dot microring diode lasers designed for terahertz (THz) difference frequency generation (DFG) between two whispering gallery modes (WGMs) around 1.3 $\\mu$m. In order to investigate the spectral features of this active...

High speed visible light communication using blue GaN laser diodes

Science.gov (United States)

Watson, S.; Viola, S.; Giuliano, G.; Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Targowski, G.; Watson, M. A.; White, H.; Rowe, D.; Laycock, L.; Kelly, A. E.

2016-10-01

GaN-based laser diodes have been developed over the last 20 years making them desirable for many security and defence applications, in particular, free space laser communications. Unlike their LED counterparts, laser diodes are not limited by their carrier lifetime which makes them attractive for high speed communication, whether in free space, through fiber or underwater. Gigabit data transmission can be achieved in free space by modulating the visible light from the laser with a pseudo-random bit sequence (PRBS), with recent results approaching 5 Gbit/s error free data transmission. By exploiting the low-loss in the blue part of the spectrum through water, data transmission experiments have also been conducted to show rates of 2.5 Gbit/s underwater. Different water types have been tested to monitor the effect of scattering and to see how this affects the overall transmission rate and distance. This is of great interest for communication with unmanned underwater vehicles (UUV) as the current method using acoustics is much slower and vulnerable to interception. These types of laser diodes can typically reach 50-100 mW of power which increases the length at which the data can be transmitted. This distance could be further improved by making use of high power laser arrays. Highly uniform GaN substrates with low defectivity allow individually addressable laser bars to be fabricated. This could ultimately increase optical power levels to 4 W for a 20-emitter array. Overall, the development of GaN laser diodes will play an important part in free space optical communications and will be vital in the advancement of security and defence applications.

Super fast physical-random number generation using laser diode frequency noises

Science.gov (United States)

Ushiki, Tetsuro; Doi, Kohei; Maehara, Shinya; Sato, Takashi; Ohkawa, Masashi; Ohdaira, Yasuo

2011-02-01

Random numbers can be classified as either pseudo- or physical-random in character. Pseudo-random numbers' periodicity renders them inappropriate for use in cryptographic applications, but naturally-generated physical-random numbers have no calculable periodicity, thereby making them ideally-suited to the task. The laser diode naturally produces a wideband "noise" signal that is believed to have tremendous capacity and great promise, for the rapid generation of physical-random numbers for use in cryptographic applications. We measured a laser diode's output, at a fast photo detector and generated physical-random numbers from frequency noises. We then identified and evaluated the binary-number-line's statistical properties. The result shows that physical-random number generation, at speeds as high as 40Gbps, is obtainable, using the laser diode's frequency noise characteristic.

Combined photoablative and photodynamic diode laser therapy as an adjunct to non-surgical periodontal treatment: a randomized split-mouth clinical trial.

Science.gov (United States)

Giannelli, Marco; Formigli, Lucia; Lorenzini, Luca; Bani, Daniele

2012-10-01

Comparing the efficacy of photoablative and photodynamic diode laser in adjunct to scaling -root planing (SRP) and SRP alone for the treatment of chronic periodontitis. Twenty-six patients were studied. Maxillary left or right quadrants were randomly assigned to sham-laser treatment + SRP or laser + SRP. This consisted of photoablative intra/extra-pocket de-epithelization with diode laser (λ = 810 nm), followed by single SRP and multiple photodynamic treatments (once weekly, 4-10 applications, mean ± SD: 3.7 ± 2.4) using diode laser (λ = 635 nm) and 0.3% methylene blue as photosensitizer. The patients were monitored at days 0 and 365 by clinical assessment (probing depth, PD; clinical attachment level, CAL; bleeding on probing, BOP) and at days 0, 15, 30, 45, 60, 75, 90, 365 by cytofluorescence analysis of gingival exfoliative samples taken in proximity of the teeth to be treated (polymorphonuclear leukocytes, PMN; red blood cells, RBC; damaged epithelial cells, DEC; bacteria). At day 365, compared with the control quadrants, the laser + SRP therapy yielded a significant (p Diode laser treatment (photoablation followed by multiple photodynamic cycles) adjunctive to conventional SRP improves healing in chronic periodontitis patients. © 2012 John Wiley & Sons A/S.

Spectral beam combining of a 980 nm tapered diode laser bar

DEFF Research Database (Denmark)

Vijayakumar, Deepak; Jensen, Ole Bjarlin; Ostendorf, Ralf

2010-01-01

We demonstrate spectral beam combining of a 980 nm tapered diode laser bar. The combined beam from 12 tapered emitters on the bar yielded an output power of 9.3 W at 30 A of operating current. An M2 value of 5.3 has been achieved along the slow axis. This value is close to that of a free running...... single tapered emitter on the bar at the same current level. The overall spectral beam combining efficiency was measured to be 63%....

Highly modular high-brightness diode laser system design for a wide application range

Science.gov (United States)

Fritsche, Haro; Kruschke, Bastian; Koch, Ralf; Ferrario, Fabio; Kern, Holger; Pahl, Ullrich; Ehm, Einar; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang

2015-03-01

For an economic production it is important to serve as many applications as possible while keeping the product variations minimal. We present our modular laser design, which is based on single emitters and various combining technics. In a first step we accept a reduction of the very high brightness of the single emitters by vertical stacking. Those emitters can be wavelength stabilized by an external resonator, providing the very same feedback to each of those laser diodes which leads to an output power of about 100W with BPP of BPP. These "500W building blocks" are consequently designed in a way that without any system change new wavelengths can be implemented by only exchanging parts but without change of the production process. This design principal offers the option to adapt the wavelength of those blocks to any applications, from UV, visible into the far IR. From laser pumping and scientific applications to materials processing such as cutting and welding of copper aluminum or steel and also medical application. Operating at wavelengths between 900 nm and 1100 nm, these systems are mainly used in cutting and welding, but the technology can also be adapted to other wavelength ranges, such as 793 nm and 1530 nm. Around 1.5 μm the diodes are already successfully used for resonant pumping of Erbium lasers.[1] Furthermore, the fully integrated electronic concept allows addressing further applications, as it is capable of very short μs pulses up to cw mode operation by simple software commands.

Effective of diode laser on teeth enamel in the teeth whitening treatment

Science.gov (United States)

Klunboot, U.; Arayathanitkul, K.; Chitaree, R.; Emarat, N.

2011-12-01

This research purpose is to investigate the changing of teeth color and to study the surface of teeth after treatment by laser diode at different power densities for tooth whitening treatment. In the experiment, human-extracted teeth samples were divided into 7 groups of 6 teeth each. After that laser diode was irradiated to teeth, which were coated by 38% concentration of hydrogen peroxide, during for 20, 30 and 60 seconds at power densities of 10.9 and 52.1 W/cm2. The results of teeth color change were described by the CIEL*a*b* systems and the damage of teeth surface were investigated by scanning electron microscopy (SEM). The results showed that the power density of the laser diode could affect the whiteness of teeth. The high power density caused more luminous teeth than the low power density did, but on the other hand the high power density also caused damage to the teeth surface. Therefore, the laser diode at the low power densities has high efficiency for tooth whitening treatment and it has a potential for other clinical applications.

Fibrolipoma of the lip treated by diode laser surgery: A case report

Directory of Open Access Journals (Sweden)

Capodiferro Saverio

2008-09-01

Full Text Available Abstract Introduction Several neoplasms of the adipose tissue can involve the soft tissues of the head and neck region. These neoplasms are mainly treated surgically and an accurate histological examination is mandatory for a precise diagnosis. Case presentation We report a case of fibrolipoma involving the lower lip of a 43-year-old man, which was successfully treated by diode laser surgery. This approach allowed adequate resection of the neoplasm with minimal damage to the adjacent tissues, thus reducing post-surgical scarring. Conclusion Diode laser surgery for the treatment of benign lesions of the oral mucosa appears to be a convenient alternative to conventional blade surgery and has proved to be effective for the excision of fibrolipoma of the lip. The possibility of avoiding direct suture after excision is surely helpful when aesthetic areas, such as the lip, are surgically treated. For these reasons, and also considering the lower histological alteration of the specimen obtained with diode laser surgery if adequately used, the diode laser is undoubtedly a good alternative to conventional surgery.

Colliding Pulse Mode-Locked Laser Diode using Multimode Interference Reflectors

NARCIS (Netherlands)

Gordon Gallegos, Carlos; Guzmán, R.C.; Jimenez, A.; Leijtens, X.J.M.; Carpintero, G.

2014-01-01

We present a novel fully monolithic Colliding Pulse Mode-Locked Laser Diode (CPML) using Multimode Interference Reflectors (MMIRs) to create the laser resonator. We demonstrate experimentally for the first time to our knowledge the Colliding Pulse mode-locking of a laser using MMIRs by observation

Holograms for laser diode: Single mode optical fiber coupling

Science.gov (United States)

Fuhr, P. L.

1982-01-01

The low coupling efficiency of semiconductor laser emissions into a single mode optical fibers place a severe restriction on their use. Associated with these conventional optical coupling techniques are stringent alignment sensitivities. Using holographic elements, the coupling efficiency may be increased and the alignment sensitivity greatly reduced. Both conventional and computer methods used in the generation of the holographic couplers are described and diagrammed. The reconstruction geometries used are shown to be somewhat restrictive but substantially less rigid than their conventional optical counterparts. Single and double hologram techniques are examined concerning their respective ease of fabrication and relative merits.

The amplitude modulation of laser diode emission with antireflection piezo films on mirrors

International Nuclear Information System (INIS)

Abrarov, S.M.; Karimov, Kh.S.; Akhmedov, Kh.M.

2001-01-01

Present article is devoted to amplitude modulation of laser diode emission with antireflection piezo films on mirrors. The modulator based on laser diode and the emission amplitude modulation of which is performed by electric field impact on antireflection piezo films applied on mirrors was studied.

Tunable, diode side-pumped Er:YAG laser

Science.gov (United States)

Hamilton, C.E.; Furu, L.H.

1997-04-22

A discrete-element Er:YAG laser, side pumped by a 220 Watt peak-power InGaAs diode array, generates >500 mWatts at 2.94 {micro}m, and is tunable over a 6 nm range near about 2.936 {micro}m. The oscillator is a plano-concave resonator consisting of a concave high reflector, a flat output coupler, a Er:YAG crystal and a YAG intracavity etalon, which serves as the tuning element. The cavity length is variable from 3 cm to 4 cm. The oscillator uses total internal reflection in the Er:YAG crystal to allow efficient coupling of the diode emission into the resonating modes of the oscillator. With the tuning element removed, the oscillator produces up to 1.3 Watts of average power at 2.94 {micro}m. The duty factor of the laser is 6.5% and the repetition rate is variable up to 1 kHz. This laser is useful for tuning to an atmospheric transmission window at 2.935 {micro}m (air wavelength). The laser is also useful as a spectroscopic tool because it can access several infrared water vapor transitions, as well as transitions in organic compounds. Other uses include medical applications (e.g., for tissue ablation and uses with fiber optic laser scalpels) and as part of industrial effluent monitoring systems. 4 figs.

Study on the ion diode with a laser-plasma anode

International Nuclear Information System (INIS)

Bykovskij, Yu.A.; Kozyrev, Yu.P.; Kozlovskij, K.I.; Tsybin, A.S.; Shikanov, A.E.

1981-01-01

Results of investigation into a pulsed ion diode with magnetic electron isolation (DMI) using a laser ion source are stated. The investigations were carried on by measurement of current characteristics and neutron diode yield for different parameters of laser radiation, isolating magnetic field and DMI geometry. approximately equal to 150 A current of accelerated ions has been generated at a density of approximately equal to 10 A/cm 2 and approximately 1 μs pulse duration when using isolating magnetic field having inductance of up to 10 kGs and laser radiation energy of up to 1 J (power density > or approximately 10 9 W/cm 2 ). Current diode efficiency constituted approximately 50 %. Neutron yield amounted to approximately 10 7 neutr/pulse (D(d, n)He 3 reaction) at an optimal value of inductance of isolating magnetic field. Frequency regime of DMI operation with pulse repetition of up to 10 Hz has been realized [ru

Design windows of laser fusion power plants and conceptual design of laser-diode pumped slab laser

International Nuclear Information System (INIS)

Kozaki, Y.; Eguchi, T.; Izawa, Y.

1999-01-01

An analysis of the design space available to laser fusion power plants has been carried out, in terms of design key parameters such as target gain, laser energy and laser repetition rate, the number of fusion react ion chambers, and plant size. The design windows of economically attractive laser fusion plants is identified with the constraints of key design parameters and the cost conditions. Especially, for achieving high repetition rate lasers, we have proposed and designed a diode-pumped solid-state laser driver which consists of water-cooled zig-zag path slab amplifiers. (author)

Construction and characterization of external cavity diode lasers for atomic physics.

Science.gov (United States)

Hardman, Kyle S; Bennetts, Shayne; Debs, John E; Kuhn, Carlos C N; McDonald, Gordon D; Robins, Nick

2014-04-24

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included.