Experimental study of single event burnout and single event gate rupture in power MOSFETs and IGBT

International Nuclear Information System (INIS)

Tang Benqi; Wang Yanping; Geng Bin

2001-01-01

An experimental study was carried out to determine the single event burnout and single event gate rupture sensitivities in power MOSFETs and IGBT which were exposed to heavy ions from 252 Cf source. The test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism were presented. Current measurements have been performed with a specially designed circuit. The test results include the observed dependence upon applied drain or gate to source bias and versus with external capacitors and limited resistors

Simulating single-event burnout of n-channel power MOSFET's

International Nuclear Information System (INIS)

Johnson, G.H.; Hohl, J.H.; Schrimpf, R.D.; Galloway, K.F.

1993-01-01

Heavy ions are ubiquitous in a space environment. Single-event burnout of power MOSFET's is a sudden catastrophic failure mechanism that is initiated by the passage of a heavy ion through the device structure. The passage of the heavy ion generates a current filament that locally turns on a parasitic n-p-n transistor inherent to the power MOSFET. Subsequent high currents and high voltage in the device induce second breakdown of the parasitic bipolar transistor and hence meltdown of the device. This paper presents a model that can be used for simulating the burnout mechanism in order to gain insight into the significant device parameters that most influence the single-event burnout susceptibility of n-channel power MOSFET's

Single Event Effects in FPGA Devices 2015-2016

Science.gov (United States)

Berg, Melanie; LaBel, Kenneth; Pellish, Jonathan

2016-01-01

This presentation provides an overview of single event effects in FPGA devices 2015-2016 including commercial Xilinx V5 heavy ion accelerated testing, Xilinx Kintex-7 heavy ion accelerated testing, mitigation study, and investigation of various types of triple modular redundancy (TMR) for commercial SRAM based FPGAs.

Single event phenomena in atmospheric neutron environments

International Nuclear Information System (INIS)

Gossett, C.A.; Hughlock, B.W.; Katoozi, M.; LaRue, G.S.; Wender, S.A.

1993-01-01

As integrated circuit technology achieves higher density through smaller feature sizes and as the airplane manufacturing industry integrates more sophisticated electronic components into the design of new aircraft, it has become increasingly important to evaluate the contribution of single event effects, primarily Single Event Upset (SEU), to the safety and reliability of commercial aircraft. In contrast to the effects of radiation on electronic systems in space applications for which protons and heavy ions are of major concern, in commercial aircraft applications the interactions of high energy neutrons are the dominant cause of single event effects. These high energy neutrons are produced by the interaction of solar and galactic cosmic rays, principally protons and heavy ions, in the upper atmosphere. This paper will describe direct experimental measurements of neutron-induced Single Event Effect (SEE) rates in commercial high density static random access memories in a neutron environment characteristic of that at commercial airplane altitudes. The first experimental measurements testing current models for neutron-silicon burst generation rates will be presented, as well as measurements of charge collection in silicon test structures as a function of neutron energy. These are the first laboratory SEE and charge collection measurements using a particle beam having a continuum energy spectrum and with a shape nearly identical to that observed during flight

Single event upset test programs

International Nuclear Information System (INIS)

Russen, L.C.

1984-11-01

It has been shown that the heavy ions in cosmic rays can give rise to single event upsets in VLSI random access memory devices (RAMs). Details are given of the programs written to test 1K, 4K, 16K and 64K memories during their irradiation with heavy charged ions, in order to simulate the effects of cosmic rays in space. The test equipment, which is used to load the memory device to be tested with a known bit pattern, and subsequently interrogate it for upsets, or ''flips'', is fully described. (author)

The single-event effect evaluation technology for nano integrated circuits

International Nuclear Information System (INIS)

Zheng Hongchao; Zhao Yuanfu; Yue Suge; Fan Long; Du Shougang; Chen Maoxin; Yu Chunqing

2015-01-01

Single-event effects of nano scale integrated circuits are investigated. Evaluation methods for single-event transients, single-event upsets, and single-event functional interrupts in nano circuits are summarized and classified in detail. The difficulties in SEE testing are discussed as well as the development direction of test technology, with emphasis placed on the experimental evaluation of a nano circuit under heavy ion, proton, and laser irradiation. The conclusions in this paper are based on many years of testing at accelerator facilities and our present understanding of the mechanisms for SEEs, which have been well verified experimentally. (paper)

An automated single ion hit at JAERI heavy ion microbeam to observe individual radiation damage

International Nuclear Information System (INIS)

Kamiya, Tomihiro; Sakai, Takuro; Naitoh, Yutaka; Hamano, Tsuyoshi; Hirao, Toshio

1999-01-01

Microbeam scanning and a single ion hit technique have been combined to establish an automated beam positioning and single ion hit system at the JAERI Takasaki heavy ion microbeam system. Single ion irradiation on preset points of a sample in various patterns can be performed automatically in a short period. The reliability of the system was demonstrated using CR-39 nuclear track detectors. Single ion hit patterns were achieved with a positioning accuracy of 2 μm or less. In measurement of single event transient current using this system, the reduction of the pulse height by accumulation of radiation damages was observed by single ion injection to the same local areas. This technique showed a possibility to get some quantitative information about the lateral displacement of an individual radiation effect in silicon PIN photodiodes. This paper will give details of the irradiation system and present results from several experiments

NEPP Update of Independent Single Event Upset Field Programmable Gate Array Testing

Science.gov (United States)

Berg, Melanie; Label, Kenneth; Campola, Michael; Pellish, Jonathan

2017-01-01

This presentation provides a NASA Electronic Parts and Packaging (NEPP) Program update of independent Single Event Upset (SEU) Field Programmable Gate Array (FPGA) testing including FPGA test guidelines, Microsemi RTG4 heavy-ion results, Xilinx Kintex-UltraScale heavy-ion results, Xilinx UltraScale+ single event effect (SEE) test plans, development of a new methodology for characterizing SEU system response, and NEPP involvement with FPGA security and trust.

Microbeam mapping of single event latchups and single event upsets in CMOS SRAMs

International Nuclear Information System (INIS)

Barak, J.; Adler, E.; Fischer, B.E.; Schloegl, M.; Metzger, S.

1998-01-01

The first simultaneous microbeam mapping of single event upset (SEU) and latchup (SEL) in the CMOS RAM HM65162 is presented. The authors found that the shapes of the sensitive areas depend on V DD , on the ions being used and on the site on the chip being hit by the ion. In particular, they found SEL sensitive sites close to the main power supply lines between the memory-bit-arrays by detecting the accompanying current surge. All these SELs were also accompanied by bit-flips elsewhere in the memory (which they call indirect SEUs in contrast to the well known SEUs induced in the hit memory cell only). When identical SEL sensitive sites were hit farther away from the supply lines only indirect SEL sensitive sites could be detected. They interpret these events as latent latchups in contrast to the classical ones detected by their induced current surge. These latent SELs were probably decoupled from the main supply lines by the high resistivity of the local supply lines

Destructive Single-Event Effects in Diodes

Science.gov (United States)

Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

2017-01-01

In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system

International Nuclear Information System (INIS)

Arita, Yutaka; Kihara, Yuji; Mitsuhasi, Junichi; Niita, Koji; Takai, Mikio; Ogawa, Izumi; Kishimoto, Tadafumi; Yoshihara, Tsutomu

2007-01-01

The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-μm-design-rule 4 Mbit static random access memory (SRAM) using particle and heavy-ion transport code system (PHITS): The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS. (author)

Test Standard Revision Update: JESD57, "Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation"

Science.gov (United States)

Lauenstein, Jean-Marie

2015-01-01

The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. In this talk, we place this test standard into context with other relevant radiation test standards to show its importance for single-event effect radiation testing for space applications. We show the range of industry, government, and end-user party involvement in the revision. Finally, we highlight some of the key changes being made and discuss the trade-space in which setting standards must be made to be both useful and broadly adopted.

Crater formation by single ions, cluster ions and ion "showers"

CERN Document Server

Djurabekova, Flyura; Timko, Helga; Nordlund, Kai; Calatroni, Sergio; Taborelli, Mauro; Wuensch, Walter

2011-01-01

The various craters formed by giant objects, macroscopic collisions and nanoscale impacts exhibit an intriguing resemblance in shapes. At the same time, the arc plasma built up in the presence of sufficiently high electric fields at close look causes very similar damage on the surfaces. Although the plasma–wall interaction is far from a single heavy ion impact over dense metal surfaces or the one of a cluster ion, the craters seen on metal surfaces after a plasma discharge make it possible to link this event to the known mechanisms of the crater formations. During the plasma discharge in a high electric field the surface is subject to high fluxes (~1025 cm-2s-1) of ions with roughly equal energies typically of the order of a few keV. To simulate such a process it is possible to use a cloud of ions of the same energy. In the present work we follow the effect of such a flux of ions impinging the surface in the ‘‘shower’’ manner, to find the transition between the different mechanisms of crater formati...

Charge collection and SEU (Single Event Upset) mechanisms

International Nuclear Information System (INIS)

Musseau, O.

1994-01-01

The purpose of this paper is to review the mechanisms of single event upset in microelectronic devices due to interaction with cosmic ions. Experimental and theoretical results are presented, and actual questions and problems are discussed. A brief introduction recalls the creation of the dense plasma of electron-hole pairs along the ion track. The basic processes for charge collection in a simple np junction (drift and diffusion) are presented. The funneling-field effect is discussed and experimental results are compared to numerical simulations and semi-empirical models. Charge collection in actual microelectronic structures is then presented. Single event upset of memory cells is discussed, based on numerical and experimental data. The main parameters for device characterization are presented. From the physical interpretation of charge collection mechanisms, the intrinsic sensitivity of various microelectronic technologies is determined and compared to experimental data. Scaling laws and future trends are discussed. (author)

CL-imaging and ion microprobe dating of single zircons from a high-grade rock from the Central Zone, Limpopo Belt, South Africa: Evidence for a single metamorphic event at ˜2.0 Ga

Science.gov (United States)

Mouri, H.; Brandl, G.; Whitehouse, M.; de Waal, S.; Guiraud, M.

2008-02-01

The combination of ion microprobe dating and cathodoluminescence (CL) imaging of zircons from a high-grade rock from the Central Zone of the Limpopo Belt were used to constrain the age of metamorphic events in the area. Zircon grains extracted from an orthopyroxene-gedrite-bearing granulite were prepared for single crystal CL-imaging and ion microprobe dating. The grains display complex zoning when using SEM-based CL-imaging. A common feature in most grains is the presence of a distinct core with a broken oscillatory zoned structure, which clearly appears to be the remnant of an original grain of igneous origin. This core is overgrown by an unzoned thin rim measuring about 10-30 μm in diameter, which is considered as new zircon growth during a single metamorphic event. Selected domains of the zircon grains were analysed for U, Pb and Th isotopic composition using a CAMECA IMS 1270 ion microprobe (Nordsim facility). Most of the grains define a near-concordant cluster with some evidence of Pb loss. The most concordant ages of the cores yielded a weighted mean 207Pb/ 206Pb age of 2689 ± 15 (2 σ) Ma, interpreted as the age of the protolith of an igneous origin. The unzoned overgrowths of the zircon grains yielded a considerably younger weighted mean 207Pb/ 206Pb age of ˜2006.5 ± 8.0 Ma (2 σ), and these data are interpreted to reflect closely the age of the ubiquitous high-grade metamorphic event in the Central Zone. This study shows clearly, based on both the internal structure of the zircons and the data obtained by ion microprobe dating, that only a single metamorphic event is recorded by the studied 2.69 Ga old rocks, and we found no evidence of an earlier metamorphic event at ˜2.5 Ga as postulated earlier by some workers.

Swift heavy ion induced single event upsets in high density UV-EPROM's

Energy Technology Data Exchange (ETDEWEB)

Dahiwale, S.S. [Department of Physics, University of Pune, Pune 7 (India); Shinde, N.S. [Department of Chemical Engineering, Mie University (Japan); Kanjilal, D. [Inter University Accelerator Center, New Delhi (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 7 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 7 (India)], E-mail: sanjay@physics.unipune.ernet.in

2008-04-15

A few high density UV-EPROM's (32Kb x 8) were irradiated with 5.41 MeV energy {alpha}-particles with fluences from 10{sup 4} to 10{sup 8} alphas/cm{sup 2} and 100 MeV nickel, iodine and silver ions for low fluences between 5 x 10{sup 7} and 10{sup 8} ions/cm{sup 2}. The energy and ion species was selected on the basis of predicted threshold values of linear energy transfer (LET) in silicon. The program which was stored in the memory found to be changed from 0 to 1 and 1 to 0 state, respectively. On the basis of changed states, the cross-sections ({sigma}) were calculated to investigate the single event effects/upsets. No upset was observed in case of {alpha}-particle since it has very low LET, but the SEU cross-section found to be more in case of Iodine i.e. 2.29 x 10{sup -3} cm{sup 2} than that of nickel, 2.12 x 10{sup -3} cm{sup 2} and silver, 2.26 x 10{sup -3}. This mainly attributes that LET for iodine is more as compared to silver and nickel ions, which deposits large amount of energy near the sensitive node of memory cell in the form of electron-hole pairs required to change the state. These measured SEU cross-section were also compared with theoretically predicted values along with the Weibull distribution fit to the ion induced experimental SEU data. The theoretical predicted SEU cross-section 3.27 x 10{sup -3} cm{sup 2} found to be in good agreement with the measured SEU cross-section.

Analyzing Single-Event Gate Ruptures In Power MOSFET's

Science.gov (United States)

Zoutendyk, John A.

1993-01-01

Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

Science.gov (United States)

Scheick, Leif

2010-01-01

The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Single-event transients (SET) in analog circuits

International Nuclear Information System (INIS)

Chen Panxun; Zhou Kaiming

2006-01-01

A new phenomenon of single- event upset is introduced. The transient signal is produced in the output of analog circuits after a heavy ion strikes. The transient upset can influence the circuit connected with the output of analog circuits. For example, the output of operational amplifier can be connected with the input of a digital counter, and the pulse of sufficiently high transient output induced by an ion can increase counts of the counter. On the other hand, the transient voltage signal at the output of analog circuits can change the stage of other circuits. (authors)

Investigation of single event latchup

International Nuclear Information System (INIS)

Xue Yuxiong; Yang Shengsheng; Cao Zhou; Ba Dedong; An Heng; Chen Luojing; Guo Gang

2012-01-01

Radiation effects on avionics microelectronics are important reliability issues for many space applications. In particular, single-event latchup (SEL) phenomenon is a major threat to CMOS integrated circuits in space systems. To effectively circumvent the failure, it is important to know the behavior of such devices during latchup. In this paper, the mechanisms for SEL in CMOS devices are investigated. Several microelectronic devices used in avionics are tested using heavy ion beams, pulsed laser and 252 Cf source. Based on the SEL test results, SEL-hardening and monitoring methods for preventing SEL from the systems design level are proposed. (authors)

Current Single Event Effects Results for Candidate Spacecraft Electronics for NASA

Science.gov (United States)

OBryan, Martha V.; Seidleck, Christina M.; Carts, Martin A.; LaBel, Kenneth A.; Marshall, Cheryl J.; Reed, Robert A.; Sanders, Anthony B.; Hawkins, Donald K.; Cox, Stephen R.; Kniffin, Scott D.

2004-01-01

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects. Devices tested include digital, analog, linear bipolar, and hybrid devices, among others.

Single-Event Effect Testing of the Vishay Si7414DN n-Type TrenchFET(Registered Trademark) Power MOSFET

Science.gov (United States)

Lauenstein, J.-M.; Casey, M. C.; Campola, M. A.; Phan, A. M.; Wilcox, E. P.; Topper, A. D.; Ladbury, R. L.

2017-01-01

This study was being undertaken to determine the single event effect susceptibility of the commercial Vishay 60-V TrenchFET power MOSFET. Heavy-ion testing was conducted at the Texas AM University Cyclotron Single Event Effects Test Facility (TAMU) and the Lawrence Berkeley National Laboratory BASE Cyclotron Facility (LBNL). In addition, initial 200-MeV proton testing was conducted at Massachusetts General Hospital (MGH) Francis H. Burr Proton Beam Therapy Center. Testing was performed to evaluate this device for single-event effects from lower-LET, lighter ions relevant to higher risk tolerant space missions.

Development of Guidelines for Use of Proton Single-Event Test Data to Bound Single-Event Effect Susceptibility Due to Light Ions

Data.gov (United States)

National Aeronautics and Space Administration — Conventional methods for Single-Event Effects (SEE) Hardness Assurance have proven difficult to adapt to Explorer, Cubesat and other risk tolerant platforms with...

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

Science.gov (United States)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond L.; Kim, Hak; Phan, Anthony; Seidleck, Christina; Label, Kenneth

2016-01-01

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

Single-Event Effects in Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2015-01-01

This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

Study on relations between heavy ions single event upset cross sections and γ accumulated doses

International Nuclear Information System (INIS)

He Chaohui; Geng Bin; Wang Yanping; Peng Honglun; Yang Hailiang; Chen Xiaohua; Li Guozheng

2002-01-01

Experiments were done under 252 Cf and 60 Co γ source to study the relation between heavy ion Single Event Upset (SEU) cross sections and γ accumulated doses. There was no obvious rule and little influence of γ accumulated doses on SEU cross sections when Static Random Access Memories were in power off mode and static power on mode. In active measuring mode, the SEU cross section increased as the accumulated doses increasing when same data were written in memory cells. If reverse data, such as '55' and 'AA', were written in memory cells during the experiment, the SEU cross sections decreased to the level when memories were not irradiated under 60 Co γ source, even more small. It implied that the influence of γ accumulated doses on SEU cross sections can be set off by this method

Experimental Setups for Single Event Effect Studies

OpenAIRE

N. H. Medina; V. A. P. Aguiar; N. Added; F. Aguirre; E. L. A. Macchione; S. G. Alberton; M. A. G. Silveira; J. Benfica; F. Vargas; B. Porcher

2016-01-01

Experimental setups are being prepared to test and to qualify electronic devices regarding their tolerance to Single Event Effect (SEE). A multiple test setup and a new beam line developed especially for SEE studies at the São Paulo 8 UD Pelletron accelerator were prepared. This accelerator produces proton beams and heavy ion beams up to 107Ag. A Super conducting Linear accelerator, which is under construction, may fulfill all of the European Space Agency requirements to qualify electronic...

Relationship between single-event upset immunity and fabrication processes of recent memories

International Nuclear Information System (INIS)

Nemoto, N.; Shindou, H.; Kuboyama, S.; Matsuda, S.; Itoh, H.; Okada, S.; Nashiyama, I.

1999-01-01

Single-Event upset (SEU) immunity for commercial devices were evaluated by irradiation tests using high-energy heavy ions. We show test results and describe the relationship between observed SEU and structures/fabrication processes. We have evaluated single-even upset (SEU) tolerance of recent commercial memory devices using high energy heavy ions in order to find relationship between SEU rate and their fabrication process. It was revealed that the change of the process parameter gives much effect for the SEU rate of the devices. (authors)

Event by event fluctuations in heavy ion collisions

Energy Technology Data Exchange (ETDEWEB)

Koch, Volker

2001-01-01

The authors discuss the physics underlying event-by-event fluctuations in relativistic heavy ion collisions. We will argue that the fluctuations of the ratio of positively over negatively charged particles may serve as a unique signature for the Quark Gluon Plasma.

Discussions On Worst-Case Test Condition For Single Event Burnout

Science.gov (United States)

Liu, Sandra; Zafrani, Max; Sherman, Phillip

2011-10-01

This paper discusses the failure characteristics of single- event burnout (SEB) on power MOSFETs based on analyzing the quasi-stationary avalanche simulation curves. The analyses show the worst-case test condition for SEB would be using the ion that has the highest mass that would result in the highest transient current due to charge deposition and displacement damage. The analyses also show it is possible to build power MOSFETs that will not exhibit SEB even when tested with the heaviest ion, which have been verified by heavy ion test data on SEB sensitive and SEB immune devices.

Single-ion conducting diblock terpolymers for lithium-ion batteries

Science.gov (United States)

Morris, Melody; Epps, Thomas H., III

Block polymer (BP) electrolytes provide an attractive route to overcome the competing constraints of high conductivity and mechanical/thermal stability in lithium-ion batteries through nanoscale self-assembly. For example, macromolecules can be engineered such that one domain conducts lithium ions and the other prevents lithium dendrite formation. Herein, we report on the behavior of a single-ion conducting BP electrolyte that was designed to facilitate the transport of lithium ions. These polymers differ from traditional salt-doped BP electrolytes, which require the addition of a lithium salt to bestow conductivity and typically suffer from substantial counterion motion that reduces efficiency. New single-ion BPs were synthesized, and the nanoscale morphologies were determined using small angle X-ray scattering and transmission electron microscopy. Electrolyte performance was measured using AC impedance spectroscopy and DC polarization, and the results were correlated to nanoscale morphology and ion content. Enhanced physical understanding of single-ion BPs was gained by connecting the ion mobility to the chemistry, chain structure, and ion content of the single-ion BP. These studies can be applied to other charged-neutral block polymers to elucidate the effects of ion content on self-assembly and macroscopic properties.

Physical mechanisms of single-event effects in advanced microelectronics

Energy Technology Data Exchange (ETDEWEB)

Schrimpf, Ronald D. [Electrical Engineering and Computer Science, Vanderbilt University, 5635 Stevenson Center, Nashville, TN 37235 (United States)]. E-mail: ron.schrimpf@vanderbilt.edu; Weller, Robert A. [Electrical Engineering and Computer Science, Vanderbilt University, 5635 Stevenson Center, Nashville, TN 37235 (United States); Mendenhall, Marcus H. [Free Electron Laser Center, Vanderbilt University, Station B 351816, Nashville, TN 37235 (United States); Reed, Robert A. [Electrical Engineering and Computer Science, Vanderbilt University, 5635 Stevenson Center, Nashville, TN 37235 (United States); Massengill, Lloyd W. [Electrical Engineering and Computer Science, Vanderbilt University, 5635 Stevenson Center, Nashville, TN 37235 (United States)

2007-08-15

The single-event error rate in advanced semiconductor technologies can be estimated more accurately than conventional methods by using simulation based on accurate descriptions of a large number of individual particle interactions. The results can be used to select the ion types and energies for accelerator testing and to identify situations in which nuclear reactions will contribute to the error rate.

Physical mechanisms of single-event effects in advanced microelectronics

International Nuclear Information System (INIS)

Schrimpf, Ronald D.; Weller, Robert A.; Mendenhall, Marcus H.; Reed, Robert A.; Massengill, Lloyd W.

2007-01-01

The single-event error rate in advanced semiconductor technologies can be estimated more accurately than conventional methods by using simulation based on accurate descriptions of a large number of individual particle interactions. The results can be used to select the ion types and energies for accelerator testing and to identify situations in which nuclear reactions will contribute to the error rate

Impact of NBTI Aging on the Single-Event Upset of SRAM Cells

CERN Document Server

Bagatin, M; Gerardin, Simone; Paccagnella, Alessandro; Bagatin, Marta

2010-01-01

We analyzed the impact of negative bias temperature instability (NBTI) on the single-event upset rate of SRAM cells through experiments and SPICE simulations. We performed critical charge simulations introducing different degradation patterns in the cells, in three technology nodes, from 180 to 90 nm. The simulations results were checked with alpha-particle and heavy-ion irradiations on a 130-nm technology. Both simulations and experimental results show that NBTI degradation does not significantly affect the single-event upset SRAM cell rate as long as the parametric drift induced by aging is within 10\\%.

A singly charged ion source for radioactive 11C ion acceleration

Science.gov (United States)

Katagiri, K.; Noda, A.; Nagatsu, K.; Nakao, M.; Hojo, S.; Muramatsu, M.; Suzuki, K.; Wakui, T.; Noda, K.

2016-02-01

A new singly charged ion source using electron impact ionization has been developed to realize an isotope separation on-line system for simultaneous positron emission tomography imaging and heavy-ion cancer therapy using radioactive 11C ion beams. Low-energy electron beams are used in the electron impact ion source to produce singly charged ions. Ionization efficiency was calculated in order to decide the geometric parameters of the ion source and to determine the required electron emission current for obtaining high ionization efficiency. Based on these considerations, the singly charged ion source was designed and fabricated. In testing, the fabricated ion source was found to have favorable performance as a singly charged ion source.

Applicability of LET to single events in microelectronic structures

Science.gov (United States)

Xapsos, Michael A.

1992-12-01

LET is often used as a single parameter to determine the energy deposited in a microelectronic structure by a single event. The accuracy of this assumption is examined for ranges of ion energies and volumes of silicon appropriate for modern microelectronics. It is shown to be accurate only under very restricted conditions. Significant differences arise because (1) LET is related to energy lost by the ion, not energy deposited in the volume; and (2) LET is an average value and does not account for statistical variations in energy deposition. Criteria are suggested for determining when factors other than LET should be considered, and new analytical approaches are presented to account for them. One implication of these results is that improvements can be made in space upset rate predictions by incorporating the new methods into currently used codes such as CREME and CRUP.

Single ion implantation for single donor devices using Geiger mode detectors

International Nuclear Information System (INIS)

Bielejec, E; Seamons, J A; Carroll, M S

2010-01-01

Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Ion implantation, an industry standard for atom placement in materials, requires augmentation for single ion capability including a method for detecting a single ion arrival. Integrating single ion detection techniques with the single donor device construction region allows single ion arrival to be assured. Improving detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility in lay-out integration with the active region of the single donor device construction zone by allowing ion sensing at potentially greater distances. Using a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector we have demonstrated 100% detection efficiency at a distance of >75 μm from the center of the collecting junction. This detection efficiency is achieved with sensitivity to ∼600 or fewer electron-hole pairs produced by the implanted ion. Ion detectors with this sensitivity and integrated with a thin dielectric, for example a 5 nm gate oxide, using low energy Sb implantation would have an end of range straggle of -1 and 10 -4 for operation temperatures of ∼300 K and ∼77 K, respectively. Low temperature operation and reduced false, 'dark', counts are critical to achieving high confidence in single ion arrival. For the device performance in this work, the confidence is calculated as a probability of >98% for counting one and only one ion for a false count probability of 10 -4 at an average ion number per gated window of 0.015.

Single-event burnout of power bipolar junction transistors

International Nuclear Information System (INIS)

Titus, J.L.; Johnson, G.H.; Schrimpf, R.D.; Galloway, K.F.

1991-01-01

Experimental evidence of single-event burnout of power bipolar junctions transistors (BJTs) is reported for the first time. Several commercial power BJTs were characterized in a simulated cosmic ray environment using mono-energetic ions at the tandem Van de Graaff accelerator facility at Brookhaven National Laboratory. Most of the device types exposed to this simulated environment exhibited burnout behavior. In this paper the experimental technique, data, and results are presented, while a qualitative model is used to help explain those results and trends observed in this experiment

Single-event effect ground test issues

International Nuclear Information System (INIS)

Koga, R.

1996-01-01

Ground-based single event effect (SEE) testing of microcircuits permits characterization of device susceptibility to various radiation induced disturbances, including: (1) single event upset (SEU) and single event latchup (SEL) in digital microcircuits; (2) single event gate rupture (SEGR), and single event burnout (SEB) in power transistors; and (3) bit errors in photonic devices. These characterizations can then be used to generate predictions of device performance in the space radiation environment. This paper provides a general overview of ground-based SEE testing and examines in critical depth several underlying conceptual constructs relevant to the conduct of such tests and to the proper interpretation of results. These more traditional issues are contrasted with emerging concerns related to the testing of modern, advanced microcircuits

Design of a single ion facility and its applications

Energy Technology Data Exchange (ETDEWEB)

Cholewa, M.; Saint, A.; Legge, G.J.F. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

The use of micro-irradiation techniques in radiobiology is not new; however, the current techniques take advantage of recent developments in particle delivery, focussing detection, image processing, cell recognition and computer control. These developments have generally come from other fields, for example microbeam elemental analysis techniques and single-event upset testing of semiconductor devices. Also in radiation biology there have been important advances in developments of individual cell assays, which allow a wide range of endpoints to be studied with good accuracy at low doses. Many of the studies that are planned involve following the responses of individual cells after a programmed exposure to charged-particle traversals. To probe the radiation sensitivity of a single cell and/or its constituents with a submicron resolution several developments are needed. The essential parameters of the proposed system can be summarised as follows: a focussed beam of ions of 300nm or less at the cell; a reliable (close to 100%) single ion detection; a fast beam switch to prevent second hits; a target holder adapted for the irradiation of wet cells and a fully automated system for cell recognition and single hits. 1 fig.

Design of a single ion facility and its applications

Energy Technology Data Exchange (ETDEWEB)

Cholewa, M; Saint, A; Legge, G J.F. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

The use of micro-irradiation techniques in radiobiology is not new; however, the current techniques take advantage of recent developments in particle delivery, focussing detection, image processing, cell recognition and computer control. These developments have generally come from other fields, for example microbeam elemental analysis techniques and single-event upset testing of semiconductor devices. Also in radiation biology there have been important advances in developments of individual cell assays, which allow a wide range of endpoints to be studied with good accuracy at low doses. Many of the studies that are planned involve following the responses of individual cells after a programmed exposure to charged-particle traversals. To probe the radiation sensitivity of a single cell and/or its constituents with a submicron resolution several developments are needed. The essential parameters of the proposed system can be summarised as follows: a focussed beam of ions of 300nm or less at the cell; a reliable (close to 100%) single ion detection; a fast beam switch to prevent second hits; a target holder adapted for the irradiation of wet cells and a fully automated system for cell recognition and single hits. 1 fig.

Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA

Science.gov (United States)

LaBel, Kenneth A.; OBryan, Martha V.; Chen, Dakai; Campola, Michael J.; Casey, Megan C.; Pellish, Jonathan A.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Ladbury, Raymond L.;

NASA Electronic Parts and Packaging Field Programmable Gate Array Single Event Effects Test Guideline Update

Science.gov (United States)

Berg, Melanie D.; LaBel, Kenneth A.

2018-01-01

The following are updated or new subjects added to the FPGA SEE Test Guidelines manual: academic versus mission specific device evaluation, single event latch-up (SEL) test and analysis, SEE response visibility enhancement during radiation testing, mitigation evaluation (embedded and user-implemented), unreliable design and its affects to SEE Data, testing flushable architectures versus non-flushable architectures, intellectual property core (IP Core) test and evaluation (addresses embedded and user-inserted), heavy-ion energy and linear energy transfer (LET) selection, proton versus heavy-ion testing, fault injection, mean fluence to failure analysis, and mission specific system-level single event upset (SEU) response prediction. Most sections within the guidelines manual provide information regarding best practices for test structure and test system development. The scope of this manual addresses academic versus mission specific device evaluation and visibility enhancement in IP Core testing.

Thermomechanical Stresses Analysis of a Single Event Burnout Process

Science.gov (United States)

Tais, Carlos E.; Romero, Eduardo; Demarco, Gustavo L.

2009-06-01

This work analyzes the thermal and mechanical effects arising in a power Diffusion Metal Oxide Semiconductor (DMOS) during a Single Event Burnout (SEB) process. For studying these effects we propose a more detailed simulation structure than the previously used by other authors, solving the mathematical models by means of the Finite Element Method. We use a cylindrical heat generation region, with 5 W, 10 W, 50 W and 100 W for emulating the thermal phenomena occurring during SEB processes, avoiding the complexity of the mathematical treatment of the ion-semiconductor interaction.

Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

Science.gov (United States)

Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

2014-01-01

This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

Single event effects and performance predictions for space applications of RISC processors

International Nuclear Information System (INIS)

Kimbrough, J.R.; Colella, N.J.; Denton, S.M.; Shaeffer, D.L.; Shih, D.; Wilburn, J.W.; Coakley, P.G.; Casteneda, C.; Koga, R.; Clark, D.A.; Ullmann, J.L.

1994-01-01

Proton and ion Single Event Phenomena (SEP) tests were performed on 32-b processors including R3000A's from all commercial manufacturers along with the Performance PR3400 family, Integrated Device Technology Inc. 79R3081, LSI Logic Corporation LR33000HC, and Intel i80960MX parts. The microprocessors had acceptable upset rates for operation in a low earth orbit or a lunar mission such as CLEMENTINE with a wide range in proton total dose failure. Even though R3000A devices are 60% smaller in physical area than R3000 devices, there was a 340% increase in device Single Event Upset (SEU) cross section. Software tests of varying complexity demonstrate that registers and other functional blocks using register architecture dominate the cross section. The current approach of giving a single upset cross section can lead to erroneous upset rates depending on the application software

A new type of ion injection event observed by Viking

International Nuclear Information System (INIS)

Yamauchi, M.; Lundin, R.; Woch, J.; Shapshak, M.; Elphinstone, R.

1993-01-01

The authors report on the observation of a new type of ion injection event observed by Viking spacecraft several degrees equatorward of the cusp. Its signature seems considerably different than previously reported events such as flux transfer events or impulsive or transient magnetosheath plasma injection events. It consists of low energy ions, as the pattern drops sharply above 100 to 200 eV

Infrared laser dissociation of single megadalton polymer ions in a gated electrostatic ion trap: the added value of statistical analysis of individual events.

Science.gov (United States)

Halim, Mohammad A; Clavier, Christian; Dagany, Xavier; Kerleroux, Michel; Dugourd, Philippe; Dunbar, Robert C; Antoine, Rodolphe

2018-05-07

In this study, we report the unimolecular dissociation mechanism of megadalton SO 3 -containing poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPS) polymer cations and anions with the aid of infrared multiphoton dissociation coupled to charge detection ion trap mass spectrometry. A gated electrostatic ion trap ("Benner trap") is used to store and detect single gaseous polymer ions generated by positive and negative polarity in an electrospray ionization source. The trapped ions are then fragmented due to the sequential absorption of multiple infrared photons produced from a continuous-wave CO 2 laser. Several fragmentation pathways having distinct signatures are observed. Highly charged parent ions characteristically adopt a distinctive "stair-case" pattern (assigned to the "fission" process) whereas low charge species take on a "funnel like" shape (assigned to the "evaporation" process). Also, the log-log plot of the dissociation rate constants as a function of laser intensity between PAMPS positive and negative ions is significantly different.

Jet-Underlying Event Separation Method for Heavy Ion Collisions at the Relativistic Heavy Ion Collider

OpenAIRE

Hanks, J. A.; Sickles, A. M.; Cole, B. A.; Franz, A.; McCumber, M. P.; Morrison, D. P.; Nagle, J. L.; Pinkenburg, C. H.; Sahlmueller, B.; Steinberg, P.; von Steinkirch, M.; Stone, M.

2012-01-01

Reconstructed jets in heavy ion collisions are a crucial tool for understanding the quark-gluon plasma. The separation of jets from the underlying event is necessary particularly in central heavy ion reactions in order to quantify medium modifications of the parton shower and the response of the surrounding medium itself. There have been many methods proposed and implemented for studying the underlying event substructure in proton-proton and heavy ion collisions. In this paper, we detail a me...

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Science.gov (United States)

Scheick, Leif

2014-01-01

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Event-by-event gluon multiplicity, energy density, and eccentricities in ultrarelativistic heavy-ion collisions

Science.gov (United States)

Schenke, Björn; Tribedy, Prithwish; Venugopalan, Raju

2012-09-01

The event-by-event multiplicity distribution, the energy densities and energy density weighted eccentricity moments ɛn (up to n=6) at early times in heavy-ion collisions at both the BNL Relativistic Heavy Ion Collider (RHIC) (s=200GeV) and the CERN Large Hardron Collider (LHC) (s=2.76TeV) are computed in the IP-Glasma model. This framework combines the impact parameter dependent saturation model (IP-Sat) for nucleon parton distributions (constrained by HERA deeply inelastic scattering data) with an event-by-event classical Yang-Mills description of early-time gluon fields in heavy-ion collisions. The model produces multiplicity distributions that are convolutions of negative binomial distributions without further assumptions or parameters. In the limit of large dense systems, the n-particle gluon distribution predicted by the Glasma-flux tube model is demonstrated to be nonperturbatively robust. In the general case, the effect of additional geometrical fluctuations is quantified. The eccentricity moments are compared to the MC-KLN model; a noteworthy feature is that fluctuation dominated odd moments are consistently larger than in the MC-KLN model.

On the Role of Ionospheric Ions in Sawtooth Events

Science.gov (United States)

Lund, E. J.; Nowrouzi, N.; Kistler, L. M.; Cai, X.; Frey, H. U.

2018-01-01

Simulations have suggested that feedback of heavy ions originating in the ionosphere is an important mechanism for driving sawtooth injections. However, this feedback may only be necessary for events driven by coronal mass ejections (CMEs), whereas in events driven by streaming interaction regions (SIRs), solar wind variability may suffice to drive these injections. Here we present case studies of two sawtooth events for which in situ data are available in both the magnetotail (Cluster) and the nightside auroral region (FAST), as well as global auroral images (IMAGE). One event, on 1 October 2001, was driven by a CME; the other, on 24 October 2002, was driven by an SIR. The available data do not support the hypothesis that heavy ion feedback is necessary to drive either event. This result is consistent with simulations of the SIR-driven event but disagrees with simulation results for a different CME-driven event. We also find that in an overwhelming majority of the sawtooth injections for which Cluster tail data are available, the O+ observed in the tail comes from the cusp rather than the nightside auroral region, which further casts doubt on the hypothesis that ionospheric heavy ion feedback is the cause of sawtooth injections.

Electron-ion correlation effects in ion-atom single ionization

Energy Technology Data Exchange (ETDEWEB)

Colavecchia, F.D.; Garibotti, C.R. [Centro Atomico Bariloche and Consejo Nacional de Investigaciones Cientificas y Tecnicas, 8400 San Carlos de Bariloche (Argentina); Gasaneo, G. [Departamento de Fisica, Universidad Nacional del Sur, Av. Alem 1253, 8000 Bahia Blanca (Argentina)

2000-06-28

We study the effect of electron-ion correlation in single ionization processes of atoms by ion impact. We present a distorted wave model where the final state is represented by a correlated function solution of a non-separable three-body continuum Hamiltonian, that includes electron-ion correlation as coupling terms of the wave equation. A comparison of the electronic differential cross sections computed with this model with other theories and experimental data reveals that the influence of the electron-ion correlation is more significant for low energy emitted electrons. (author). Letter-to-the-editor.

Composition of heavy ions in solar energetic particle events

International Nuclear Information System (INIS)

Fan, C.Y.; Gloeckler, G.

1983-01-01

The elemental, charge state, and isotopic composition of approximately 1 to 20 MeV per nucleon ions in solar energetic particle (SEP) events was determined and current understanding of the nature of solar and interplanetary processes which may explain the observations are outlined. The composition within individual SEP events may vary both with time and energy, and will in general be different from that in other SEP events. Average values of relative abundances measured in a large number of SEP events, however are found to be roughly energy independent in the approximately 1 to approximately 20 MeV per nucleon range, and show a systematic deviation from photospheric abundances which seem to be organized in terms of the first ionization potential of the ion. Direct measurements of the charge states of SEPs have revealed the surprisingly common presence of energetic He(+) along with heavy ions with typical coronal ionization states. High resolution measurements of isotopic abundance ratios in a small number of SEP events show these to be consistent with the universal composition except for the puzzling overabundance of the SEP Ne-22 relative to this isotopes ratio in the solar wind

Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

Science.gov (United States)

Zeinolabedinzadeh, Saeed; Ying, Hanbin; Fleetwood, Zachary E.; Roche, Nicolas J.-H.; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Cressler, John D.

2017-01-01

The single-event transient (SET) response of two different silicon-germanium (SiGe) X-band (8-12 GHz) low noise amplifier (LNA) topologies is fully investigated in this paper. The two LNAs were designed and implemented in 130nm SiGe HBT BiCMOS process technology. Two-photon absorption (TPA) laser pulses were utilized to induce transients within various devices in these LNAs. Impulse response theory is identified as a useful tool for predicting the settling behavior of the LNAs subjected to heavy ion strikes. Comprehensive device and circuit level modeling and simulations were performed to accurately simulate the behavior of the circuits under ion strikes. The simulations agree well with TPA measurements. The simulation, modeling and analysis presented in this paper can be applied for any other circuit topologies for SET modeling and prediction.

Nuclear data relevant to single event upsets in semiconductor memories induced by cosmic-ray neutrons and protons

International Nuclear Information System (INIS)

Watanabe, Yukinobu

2008-01-01

The role of nuclear data is examined in the study of single event upset (SEU) phenomena in semiconductor memories caused by cosmic-ray neutrons and protons. Neutron and proton SEU cross sections are calculated with a simplified semi-empirical model using experimental heavy-ion SEU cross-sections and a dedicated database of neutron and proton induced reactions on 28 Si. Some impacts of the nuclear reaction data on SEU simulation are analyzed by investigating relative contribution of secondary ions and neutron elastic scattering to SEU and influence of simultaneous multiple ions emission on SEU. (author)

NASA Electronic Parts and Packaging (NEPP) Field Programmable Gate Array (FPGA) Single Event Effects (SEE) Test Guideline Update

Science.gov (United States)

Berg, Melanie D.; LaBel, Kenneth A.

2018-01-01

The following are updated or new subjects added to the FPGA SEE Test Guidelines manual: academic versus mission specific device evaluation, single event latch-up (SEL) test and analysis, SEE response visibility enhancement during radiation testing, mitigation evaluation (embedded and user-implemented), unreliable design and its affects to SEE Data, testing flushable architectures versus non-flushable architectures, intellectual property core (IP Core) test and evaluation (addresses embedded and user-inserted), heavy-ion energy and linear energy transfer (LET) selection, proton versus heavy-ion testing, fault injection, mean fluence to failure analysis, and mission specific system-level single event upset (SEU) response prediction. Most sections within the guidelines manual provide information regarding best practices for test structure and test system development. The scope of this manual addresses academic versus mission specific device evaluation and visibility enhancement in IP Core testing.

An analog cell to detect single event transients in voltage references

Energy Technology Data Exchange (ETDEWEB)

Franco, F.J., E-mail: fjfranco@fis.ucm.es [Departamento de Física Aplicada III, Facultad de Físicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain); Palomar, C. [Departamento de Física Aplicada III, Facultad de Físicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain); Izquierdo, J.G. [Centro de Láseres Ultrarrápidos, Facultad de Químicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain); Agapito, J.A. [Departamento de Física Aplicada III, Facultad de Físicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain)

2015-01-11

A reliable voltage reference is mandatory in mixed-signal systems. However, this family of components can undergo very long single event transients when operating in radiation environments such as space and nuclear facilities due to the impact of heavy ions. The purpose of the present paper is to demonstrate how a simple cell can be used to detect these transients. The cell was implemented with typical COTS components and its behavior was verified by SPICE simulations and in a laser facility. Different applications of the cell are explored as well.

A reliable method for the counting and control of single ions for single-dopant controlled devices

International Nuclear Information System (INIS)

Shinada, T; Kurosawa, T; Nakayama, H; Zhu, Y; Hori, M; Ohdomari, I

2008-01-01

By 2016, transistor device size will be just 10 nm. However, a transistor that is doped at a typical concentration of 10 18 atoms cm -3 has only one dopant atom in the active channel region. Therefore, it can be predicted that conventional doping methods such as ion implantation and thermal diffusion will not be available ten years from now. We have been developing a single-ion implantation (SII) method that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached. Here we report a simple but reliable method to control the number of single-dopant atoms by detecting the change in drain current induced by single-ion implantation. The drain current decreases in a stepwise fashion as a result of the clusters of displaced Si atoms created by every single-ion incidence. This result indicates that the single-ion detection method we have developed is capable of detecting single-ion incidence with 100% efficiency. Our method potentially could pave the way to future single-atom devices, including a solid-state quantum computer

Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM

Science.gov (United States)

Chen, Dakai; Wilcox, Edward; Berg, Melanie; Kim, Hak; Phan, Anthony; Figueiredo, Marco; Seidleck, Christina; LaBel, Kenneth

2015-01-01

We investigated the heavy ion single-event effect (SEE) susceptibility of the industry’s first stand-alone memory based on conductive-bridge memory (CBRAM) technology. The device is available as an electrically erasable programmable read-only memory (EEPROM). We found that single-event functional interrupt (SEFI) is the dominant SEE type for each operational mode (standby, dynamic read, and dynamic write/read). SEFIs occurred even while the device is statically biased in standby mode. Worst case SEFIs resulted in errors that filled the entire memory space. Power cycle did not always clear the errors. Thus the corrupted cells had to be reprogrammed in some cases. The device is also vulnerable to bit upsets during dynamic write/read tests, although the frequency of the upsets are relatively low. The linear energy transfer threshold for cell upset is between 10 and 20 megaelectron volts per square centimeter per milligram, with an upper limit cross section of 1.6 times 10(sup -11) square centimeters per bit (95 percent confidence level) at 10 megaelectronvolts per square centimeter per milligram. In standby mode, the CBRAM array appears invulnerable to bit upsets.

Analyzing System on A Chip Single Event Upset Responses using Single Event Upset Data, Classical Reliability Models, and Space Environment Data

Science.gov (United States)

Berg, Melanie; LaBel, Kenneth; Campola, Michael; Xapsos, Michael

2017-01-01

We are investigating the application of classical reliability performance metrics combined with standard single event upset (SEU) analysis data. We expect to relate SEU behavior to system performance requirements. Our proposed methodology will provide better prediction of SEU responses in harsh radiation environments with confidence metrics. single event upset (SEU), single event effect (SEE), field programmable gate array devises (FPGAs)

Single-ion irradiation: physics, technology and applications

International Nuclear Information System (INIS)

Ohdomari, Iwao

2008-01-01

Among the various radiation effects which involve the study of radiation environments, responses of materials and devices to radiation, radiation testing and radiation hardening of devices and equipment, this review mainly considers the radiation effects induced by alpha particles and other ions used in semiconductor technology on Si crystals and Si devices. We first describe the single-ion microprobe that enables the study of the site dependence of radiation hardness in a semiconductor device. Next, we describe single-ion implantation as a tool for suppressing fluctuation in device function induced by the discrete number and random position of dopant atoms. Finally, we describe the common features associated with both 'probing' and 'modification' in terms of the nature and behaviour of defect clusters induced by single-ion irradiation. A special feature of the review is that the radiation effects discussed here are induced by 'single' particles, and not by particle beams. Although there is a great amount of accumulated data on radiation effects, they are discussed in the conventional terms of 'dose' or 'fluence,' whose unit is cm -2 . Therefore, this review provides complementary information on radiation effects. (topical review)

Design and simulation of ion optics for ion sources for production of singly charged ions

Science.gov (United States)

Zelenak, A.; Bogomolov, S. L.

2004-05-01

During the last 2 years different types of the singly charged ion sources were developed for FLNR (JINR) new projects such as Dubna radioactive ion beams, (Phase I and Phase II), the production of the tritium ion beam and the MASHA mass separator. The ion optics simulations for 2.45 GHz electron cyclotron resonance source, rf source, and the plasma ion source were performed. In this article the design and simulation results of the optics of new ion sources are presented. The results of simulation are compared with measurements obtained during the experiments.

Design and simulation of ion optics for ion sources for production of singly charged ions

International Nuclear Information System (INIS)

Zelenak, A.; Bogomolov, S.L.

2004-01-01

During the last 2 years different types of the singly charged ion sources were developed for FLNR (JINR) new projects such as Dubna radioactive ion beams, (Phase I and Phase II), the production of the tritium ion beam and the MASHA mass separator. The ion optics simulations for 2.45 GHz electron cyclotron resonance source, rf source, and the plasma ion source were performed. In this article the design and simulation results of the optics of new ion sources are presented. The results of simulation are compared with measurements obtained during the experiments

Composition of heavy ions in solar energetic particle events

International Nuclear Information System (INIS)

Fan, C.Y.; Gloeckler, G.

1983-01-01

Recent advances in determining the elemental, charge state, and isotopic composition of approximatelt 1 to 20 MeV per nucleon ions in solar energetic particle (SEP) events and outline our current understanding of the nature of solar and interplanetary processes which may explain the observations. Average values of relative abundances measured in a large number of SEP events were found to be roughly energy independent in the approx. 1 to approx. 20 MeV per nucleon range, and showed a systematic deviation from photospheric abundances which seems to be organized in terms of the first ionization potential of the ion. Direct measurements of the charge states of SEPs revealed the surprisingly common presence of energetic He(+) along with heavy ion with typically coronal ionization states. High resolution measurements of isotopic abundance ratios in a small number of SEP events showed these to be consistent with the universal composition except for the puzzling overabundance of the SEP(22)Ne/(20)Ne relative to this isotopes ratio in the solar wind. The broad spectrum of observed elemental abundance variations, which in their extreme result in composition anomalies characteristic of (3)He rich, heavy ion rich and carbon poor SEP events, along with direct measurements of the ionization states of SEPs provided essential information on the physical characteristics of, and conditions in the source regions, as well as important constraints to possible models for SEP production

Heavy ion event generator HYDJET++ (HYDrodynamics plus JETs)

Science.gov (United States)

Lokhtin, I. P.; Malinina, L. V.; Petrushanko, S. V.; Snigirev, A. M.; Arsene, I.; Tywoniuk, K.

2009-05-01

rescattering and energy loss, so-called "jet quenching") is lacking. Thus, in order to analyze existing data on low and high- p hadron production, test the sensitivity of physical observables at the upcoming LHC experiments (and other future heavy ion facilities) to the QGP formation, and study the experimental capabilities of constructed detectors, the development of adequate and fast MC models for simultaneous collective flow and jet quenching simulations is necessary. HYDJET++ event generator includes detailed treatment of soft hadroproduction as well as hard multi-parton production, and takes into account known medium effects. Solution method: A heavy ion event in HYDJET++ is a superposition of the soft, hydro-type state and the hard state resulting from multi-parton fragmentation. Both states are treated independently. HYDJET++ is the development and continuation of HYDJET MC model [12]. The main program is written in the object-oriented C++ language under the ROOT environment [1]. The hard part of HYDJET++ is identical to the hard part of Fortran-written HYDJET [13] (version 1.5) and is included in the generator structure as a separate directory. The routine for generation of single hard NN collision, generator PYQUEN [12,14], modifies the "standard" jet event obtained with the generator PYTHIA 6.4 [15]. The event-by-event simulation procedure in PYQUEN includes generation of initial parton spectra with PYTHIA and production vertexes at given impact parameter; rescattering-by-rescattering simulation of the parton path in a dense zone and its radiative and collisional energy loss; final hadronization according to the Lund string model for hard partons and in-medium emitted gluons. Then the PYQUEN multi-jets generated according to the binomial distribution are included in the hard part of the event. The mean number of jets produced in an AA event is the product of the number of binary NN subcollisions at a given impact parameter and the integral cross section of the hard

Improvement of the Energy Stability of the Single Ion Microbeam

International Nuclear Information System (INIS)

Zhan Furu; Qi Xuehong; Xu Mingliang; Chen Lianyun; Yu Zengliang

2008-01-01

Energy instability strongly affects the state and the beam size of the single ion microbeam. A facility based on the Generating Voltmeter was developed to improve the energy stability of the CAS-LIBB (Chinese Academy of Sciences, key laboratory of ion beam bioengineering) single ion microbeam. This paper presents the analysis of the energy instability of the single ion microbeam. A simplified theoretical model is set up to calculate the relationship between the energy instability and the beam spot size. By using this technique, the energy instability is adjusted to about 1%. Stable run-time is over 6 hours. The radius of the single ion beam is reduced by 10% compared to the previous one.

Single ion counting with a MCP (microchannel plate) detector

Energy Technology Data Exchange (ETDEWEB)

Tawara, Hiroko; Sasaki, Shinichi; Miyajima, Mitsuhiro [National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan); Shibamura, Eido

1996-07-01

In this study, a single-ion-counting method using alpha-particle-impact ionization of Ar atoms is demonstrated and the preliminary {epsilon}{sub mcp} for Ar ions with incident energies of 3 to 4.7 keV is determined. The single-ion counting by the MCP is aimed to be performed under experimental conditions as follows: (1) A signal from the MCP is reasonably identified as incidence of single Ar-ion. (2) The counting rate of Ar ions is less than 1 s{sup -1}. (3) The incident Ar ions are not focused on a small part of an active area of the MCP, namely, {epsilon}{sub mcp} is determined with respect to the whole active area of the MCP. So far, any absolute detection efficiency has not been reported under these conditions. (J.P.N.)

Multiple-Event, Single-Photon Counting Imaging Sensor

Science.gov (United States)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Electron–Ion Intensity Dropouts in Gradual Solar Energetic Particle Events during Solar Cycle 23

International Nuclear Information System (INIS)

Tan, Lun C.

2017-01-01

Since the field-line mixing model of Giacalone et al. suggests that ion dropouts cannot happen in the “gradual” solar energetic particle (SEP) event because of the large size of the particle source region in the event, the observational evidence of ion dropouts in the gradual SEP event should challenge the model. We have searched for the presence of ion dropouts in the gradual SEP event during solar cycle 23. From 10 SEP events the synchronized occurrence of ion and electron dropouts is identified in 12 periods. Our main observational facts, including the mean width of electron–ion dropout periods being consistent with the solar wind correlation scale, during the dropout period the dominance of the slab turbulence component and the enhanced turbulence power parallel to the mean magnetic field, and the ion gyroradius dependence of the edge steepness in dropout periods, are all in support of the solar wind turbulence origin of dropout events. Also, our observation indicates that a wide longitude distribution of SEP events could be due to the increase of slab turbulence fraction with the increased longitude distance from the flare-associated active region.

Electron-Ion Intensity Dropouts in Gradual Solar Energetic Particle Events during Solar Cycle 23

Science.gov (United States)

Tan, Lun C.

2017-09-01

Since the field-line mixing model of Giacalone et al. suggests that ion dropouts cannot happen in the “gradual” solar energetic particle (SEP) event because of the large size of the particle source region in the event, the observational evidence of ion dropouts in the gradual SEP event should challenge the model. We have searched for the presence of ion dropouts in the gradual SEP event during solar cycle 23. From 10 SEP events the synchronized occurrence of ion and electron dropouts is identified in 12 periods. Our main observational facts, including the mean width of electron-ion dropout periods being consistent with the solar wind correlation scale, during the dropout period the dominance of the slab turbulence component and the enhanced turbulence power parallel to the mean magnetic field, and the ion gyroradius dependence of the edge steepness in dropout periods, are all in support of the solar wind turbulence origin of dropout events. Also, our observation indicates that a wide longitude distribution of SEP events could be due to the increase of slab turbulence fraction with the increased longitude distance from the flare-associated active region.

Electron–Ion Intensity Dropouts in Gradual Solar Energetic Particle Events during Solar Cycle 23

Energy Technology Data Exchange (ETDEWEB)

Tan, Lun C., E-mail: ltan@umd.edu [Department of Astronomy, University of Maryland, College Park, MD 20742 (United States)

2017-09-01

Since the field-line mixing model of Giacalone et al. suggests that ion dropouts cannot happen in the “gradual” solar energetic particle (SEP) event because of the large size of the particle source region in the event, the observational evidence of ion dropouts in the gradual SEP event should challenge the model. We have searched for the presence of ion dropouts in the gradual SEP event during solar cycle 23. From 10 SEP events the synchronized occurrence of ion and electron dropouts is identified in 12 periods. Our main observational facts, including the mean width of electron–ion dropout periods being consistent with the solar wind correlation scale, during the dropout period the dominance of the slab turbulence component and the enhanced turbulence power parallel to the mean magnetic field, and the ion gyroradius dependence of the edge steepness in dropout periods, are all in support of the solar wind turbulence origin of dropout events. Also, our observation indicates that a wide longitude distribution of SEP events could be due to the increase of slab turbulence fraction with the increased longitude distance from the flare-associated active region.

Broad Beam and Ion Microprobe Studies of Single-Event Upsets in High Speed 0.18micron Silicon Germanium Heterojunction Bipolar Transistors and Circuits

Science.gov (United States)

Reed, Robert A.; Marshall, Paul W.; Pickel, Jim; Carts, Martin A.; Irwin, TIm; Niu, Guofu; Cressler, John; Krithivasan, Ramkumar; Fritz, Karl; Riggs, Pam

2003-01-01

SiGe based technology is widely recognized for its tremendous potential to impact the high speed microelectronic industry, and therefore the space industry, by monolithic incorporation of low power complementary logic with extremely high speed SiGe Heterojunction Bipolar Transistor (HBT) logic. A variety of studies have examined the ionizing dose, displacement damage and single event characteristics, and are reported. Accessibility to SiGe through an increasing number of manufacturers adds to the importance of understanding its intrinsic radiation characteristics, and in particular the single event effect (SEE) characteristics of the high bandwidth HBT based circuits. IBM is now manufacturing in its 3rd generation of their commercial SiGe processes, and access is currently available to the first two generations (known as and 6HP) through the MOSIS shared mask services with anticipated future release of the latest (7HP) process. The 5 HP process is described and is characterized by a emitter spacing of 0.5 micron and a cutoff frequency ff of 50 GHz, whereas the fully scaled 7HP HBT employs a 0.18 micron emitter and has an fT of 120 GHz. Previous investigations have the examined SEE response of 5 HP HBT circuits through both circuit testing and modeling. Charge collection modeling studies in the 5 H P process have also been conducted, but to date no measurements have been reported of charge collection in any SiGe HBT structures. Nor have circuit models for charge collection been developed in any version other than the 5 HP HBT structure. Our investigation reports the first indications of both charge collection and circuit response in IBM s 7HP-based SiGe process. We compare broad beam heavy ion SEU test results in a fully function Pseudo-Random Number (PRN) sequence generator up to frequencies of 12 Gbps versus effective LET, and also report proton test results in the same circuit. In addition, we examine the charge collection characteristics of individual 7HP HBT

Ion temperature increase during MHD events on the TST-2 spherical tokamak

International Nuclear Information System (INIS)

Ejiri, A.; Shiraiwa, S.; Takase, Y.; Yamada, T.; Nagashima, Y.; Kasahara, H.; Iijima, D.; Kobori, Y.; Nishi, T.; Taniguchi, T.; Aramasu, M.; Ohara, S.; Ushigome, M.; Yamagishi, K.

2003-01-01

Various types of MHD events including internal reconnection events are studied on the TST-2 spherical tokamak. In weak MHD events no positive current spike was observed, but in strong MHD events with positive current spikes, a rapid and significant impurity ion temperature increase was observed. The decrease in the poloidal magnetic energy is the most probable energy source for ion heating. The plasma current shows a stepwise change. The magnitude of this step correlates with the temperature increase and is found to be a good indicator of the strength of each event. (author)

The dual role of multiple-transistor charge sharing collection in single-event transients

International Nuclear Information System (INIS)

Guo Yang; Chen Jian-Jun; He Yi-Bai; Liang Bin; Liu Bi-Wei

2013-01-01

As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal—oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies. (condensed matter: structural, mechanical, and thermal properties)

Evaluation of single-event upset tolerance on 64Mbit DRAM and 16Mbit DRAM

Energy Technology Data Exchange (ETDEWEB)

Nemoto, N; Shindou, H; Matsuzaki, K; Akutsu, T; Matsuda, S [National Space Development Agency of Japan, Tokyo (Japan); Hirao, T; Itoh, H; Nashiyama, I

1997-11-01

In recent years, reduction in the mission cost is regarded as one of the most important matters, and thus much effort has been made to reduce the cost of electronic components used in spacecrafts without diminishing their performance. On this policy, there has been a growing interest in space application of commercial devices such as highly integrated memory ICs because of low prices and high performance of such devices. To ensure success in this application, it is indispensable to investigate radiation effects, e.g., single-event and total-dose effects, on commercial devices precisely. In the present study, we have evaluated single-event upset (SEU) tolerance for 1Mbit, 4Mbit SRAM and 16Mbit, 64Mbit DRAM by irradiation of high energy heavy ions such as 175MeV-Ar{sup 8+} and 450MeV-Xe{sup 23+}. We observed these SEU tolerance in space. (author)

Single Ion Trapping for the Enriched Xenon Observatory

Energy Technology Data Exchange (ETDEWEB)

Waldman, Samuel J.; /Stanford U., Phys. Dept. /SLAC

2006-03-28

In the last decade, a variety of neutrino oscillation experiments have established that there is a mass difference between neutrino flavors, without determining the absolute neutrino mass scale. The Enriched Xenon Observatory for neutrinoless double beta decay (EXO) will search for the rare decays of xenon to determine the absolute value of the neutrino mass. The experiment uses a novel technique to minimize backgrounds, identifying the decay daughter product in real time using single ion spectroscopy. Here, we describe single ion trapping and spectroscopy compatible with the EXO detector. We extend the technique of single ion trapping in ultrahigh vacuum to trapping in xenon gas. With this technique, EXO will achieve a neutrino mass sensitivity of {approx_equal} .010 eV.

Single event upsets in semiconductor devices induced by highly ionising particles.

Science.gov (United States)

Sannikov, A V

2004-01-01

A new model of single event upsets (SEUs), created in memory cells by heavy ions and high energy hadrons, has been developed. The model takes into account the spatial distribution of charge collection efficiency over the cell area not considered in previous approaches. Three-dimensional calculations made by the HADRON code have shown good agreement with experimental data for the energy dependence of proton SEU cross sections, sensitive depths and other SEU observables. The model is promising for prediction of SEU rates for memory chips exposed in space and in high-energy experiments as well as for the development of a high-energy neutron dosemeter based on the SEU effect.

Observations of the Evolution of Ion Outflow During a Sawtooth Event

Science.gov (United States)

Lund, E. J.; Nowrouzi, N.; Kistler, L. M.; Cai, X.; Frey, H. U.

2015-12-01

Sawtooth oscillations are one of several convection modes known to exist in the magnetosphere. Recent simulations have suggested that O+^+ ions transported from the high-latitude ionosphere to the magnetotail can drive sawtooth events. We present observational case studies of sawtooth events using data from FAST near the noon-midnight meridional plane, Cluster in the magnetotail, GOES and LANL energetic particle sensors at geosynchronous orbit, and ACE solar wind data to investigate the evolution of ion outflow during sawtooth events and the question of whether O+^+ outflow from one tooth helps to drive subsequent teeth. We find that oxygen enters the tail from the lobes after each tooth onset, the oxygen fraction in the magnetotail often increases after a tooth onset, and that the oxygen fraction of outflowing ions increases after a tooth event both in the cusp and on the nightside. However, a significant amount of low energy oxygen (≲1 keV) can end up in the dayside inner magnetosphere.

Single-event phenomena on recent semiconductor devices. Charge-type multiple-bit upsets in high integrated memories

International Nuclear Information System (INIS)

Makihara, Akiko; Shindou, Hiroyuki; Nemoto, Norio; Kuboyama, Satoshi; Matsuda, Sumio; Ohshima, Takeshi; Hirao, Toshio; Itoh, Hisayoshi

2001-01-01

High integrated memories are used in solid state data recorder (SSDR) of the satellite for accumulating observation data. Single event upset phenomena which turn over an accumulated data in the memory cells are caused by heavy ion incidence. Studies on single-bit upset and multiple-bit upset phenomena in the high integrated memory cells are in progress recently. 16 Mbit DRAM (Dynamic Random Access Memories) and 64 Mbit DRAM are irradiated by heavy ion species, such as iodine, bromine and nickel, in comparison with the irradiation damage in the cosmic environment. Data written on the memory devices are read out after the irradiation. The memory cells in three kinds of states, all of charged state, all of discharged state, and an alternative state of charge and discharge, are irradiated for sorting out error modes caused by heavy ion incidence. The soft error in a single memory cells is known as a turn over from charged state to discharged state. Electrons in electron-hole pair generated by heavy ion incidence are captured in a diffusion region between capacitor electrodes of semiconductor. The charged states in the capacitor electrodes before the irradiation are neutralized and changed to the discharged states. According to high integration of the memories, many of the cells are affected by a single ion incidence. The multiple-bit upsets, however, are generated in the memory cells of discharged state before the irradiation, also. The charge-type multiple-bit upsets is considered as that error data are written on the DRAM during refresh cycle of a sense-up circuit and a pre-charge circuit which control the DRAM. (M. Suetake)

Single-ion nonlinear mechanical oscillator

International Nuclear Information System (INIS)

Akerman, N.; Kotler, S.; Glickman, Y.; Dallal, Y.; Keselman, A.; Ozeri, R.

2010-01-01

We study the steady-state motion of a single trapped ion oscillator driven to the nonlinear regime. Damping is achieved via Doppler laser cooling. The ion motion is found to be well described by the Duffing oscillator model with an additional nonlinear damping term. We demonstrate here the unique ability of tuning both the linear as well as the nonlinear damping coefficients by controlling the laser-cooling parameters. Our observations pave the way for the investigation of nonlinear dynamics on the quantum-to-classical interface as well as mechanical noise squeezing in laser-cooling dynamics.

The composition of heavy ions in solar energetic particle events

International Nuclear Information System (INIS)

Fan, C.Y.

1984-01-01

The composition within individual SEP events may vary both with time and energy, and will in general be different from that in other SEP events. Average values of relative abundances measured in a large number of SEP events, however, are found to be roughly energy independent in the proportional1 to proportional20 MeV per nucleon range, and show a systematic deviation from photospheric abundances which seems to be organized in terms of the first ionization potential of the ion. Direct measurements of the charge states of SEPs have revealed the surprisingly common presence of energetic He + along with heavy ions with typically coronal ionization states. High-resolution measurements of isotopic abundance ratios in a small number of SEP events show these to be consistent with the universal composition except for the puzzling overabundance of the SEP 22 Ne/ 20 Ne relative to this isotopes ratio in the solar wind. The broad spectrum of observed elemental abundance variations, which in their extreme result in composition anomalies characteristic of 3 He-rich, heavy-ion rich and carbon-poor SEP events, along with direct measurements of the ionization states of SEPs provide essential information on the physical characteristics of, and conditions in the source regions, as well as important constraints to possible models for SEP production. (orig./HM)

Approaches to proton single-event rate calculations

International Nuclear Information System (INIS)

Petersen, E.L.

1996-01-01

This article discusses the fundamentals of proton-induced single-event upsets and of the various methods that have been developed to calculate upset rates. Two types of approaches are used based on nuclear-reaction analysis. Several aspects can be analyzed using analytic methods, but a complete description is not available. The paper presents an analytic description for the component due to elastic-scattering recoils. There have been a number of studies made using Monte Carlo methods. These can completely describe the reaction processes, including the effect of nuclear reactions occurring outside the device-sensitive volume. They have not included the elastic-scattering processes. The article describes the semiempirical approaches that are most widely used. The quality of previous upset predictions relative to space observations is discussed and leads to comments about the desired quality of future predictions. Brief sections treat the possible testing limitation due to total ionizing dose effects, the relationship of proton and heavy-ion upsets, upsets due to direct proton ionization, and relative proton and cosmic-ray upset rates

Multi-Unit Initiating Event Analysis for a Single-Unit Internal Events Level 1 PSA

Energy Technology Data Exchange (ETDEWEB)

Kim, Dong San; Park, Jin Hee; Lim, Ho Gon [KAERI, Daejeon (Korea, Republic of)

2016-05-15

The Fukushima nuclear accident in 2011 highlighted the importance of considering the risks from multi-unit accidents at a site. The ASME/ANS probabilistic risk assessment (PRA) standard also includes some requirements related to multi-unit aspects, one of which (IE-B5) is as follows: 'For multi-unit sites with shared systems, DO NOT SUBSUME multi-unit initiating events if they impact mitigation capability [1].' However, the existing single-unit PSA models do not explicitly consider multi-unit initiating events and hence systems shared by multiple units (e.g., alternate AC diesel generator) are fully credited for the single unit and ignores the need for the shared systems by other units at the same site [2]. This paper describes the results of the multi-unit initiating event (IE) analysis performed as a part of the at-power internal events Level 1 probabilistic safety assessment (PSA) for an OPR1000 single unit ('reference unit'). In this study, a multi-unit initiating event analysis for a single-unit PSA was performed, and using the results, dual-unit LOOP initiating event was added to the existing PSA model for the reference unit (OPR1000 type). Event trees were developed for dual-unit LOOP and dual-unit SBO which can be transferred from dual- unit LOOP. Moreover, CCF basic events for 5 diesel generators were modelled. In case of simultaneous SBO occurrences in both units, this study compared two different assumptions on the availability of the AAC D/G. As a result, when dual-unit LOOP initiating event was added to the existing single-unit PSA model, the total CDF increased by 1∼ 2% depending on the probability that the AAC D/G is available to a specific unit in case of simultaneous SBO in both units.

New method for selection and characterization of single-source events in Ni+Ni collisions at 32 A.MeV

International Nuclear Information System (INIS)

Maskay-Wallez, Anne-Marie

1999-01-01

The study of heavy ion collisions, with the help of such efficient multi-detectors as INDRA, has shown the persistence of reactions leading to single-source events, up to bombarding energies higher than the Fermi one. These events could help characterizing an expected phase transition in nuclear matter. Whatever interesting they may be, the single-source events correspond to a small part of the total cross section, which makes them difficult to isolate and therefore to analyze. That is why different selection means have been tested - thanks to the 'Simon' event generator - on a simulated Ni + Ni at 32 A·MeV sample, before any application to the INDRA experimental data. As the known methods based on global variables did not prove effective, a set of new 4-dimensional quantities has been built, whose main advantage lies in a better description of physical events. From a Discriminant Analysis performed on 625 of these new 'moments' proceeds a highly discriminant variable, called D 625 . The experimental cross section associated with D 625 -selected single-source events amounts to 170 mb at 32 A·MeV. Such quasi-fusion events are shown to disappear at about 60 A·MeV. As regards the deexcitation mode of the 32 A·MeV Ni + Ni single-source events, an extensive experimental study and comparisons of the data with two reference models seem to confirm the hypothesis of a transition between fusion-evaporation and simultaneous multifragmentation mechanisms. (author)

European accelerator facilities for single event effects testing

Energy Technology Data Exchange (ETDEWEB)

Adams, L; Nickson, R; Harboe-Sorensen, R [ESA-ESTEC, Noordwijk (Netherlands); Hajdas, W; Berger, G

1997-03-01

Single event effects are an important hazard to spacecraft and payloads. The advances in component technology, with shrinking dimensions and increasing complexity will give even more importance to single event effects in the future. The ground test facilities are complex and expensive and the complexities of installing a facility are compounded by the requirement that maximum control is to be exercised by users largely unfamiliar with accelerator technology. The PIF and the HIF are the result of experience gained in the field of single event effects testing and represent a unique collaboration between space technology and accelerator experts. Both facilities form an essential part of the European infrastructure supporting space projects. (J.P.N.)

Single event simulation for memories using accelerated ions

International Nuclear Information System (INIS)

Sakagawa, Y.; Shiono, N.; Mizusawa, T.; Sekiguchi, M.; Sato, K.; Sugai, I.; Hirao, Y.; Nishimura, J.; Hattori, T.

1987-01-01

To evaluate the error immunity of the LSI memories from cosmic rays in space, an irradiation test using accelerated heavy ions is performed. The sensitive regions for 64 K DRAM (Dynamic Random Access Memory) and 4 K SRAM (Static Random Access Memory) are determined from the irradiation test results and the design parameters of the devices. The observed errors can be classified into two types. One is the direct ionization type and the other is the recoil produced error type. Sensitive region is determined for the devices. Error rate estimation methods for both types are proposed and applied to those memories used in space. The error rate of direct ionization exceeds the recoil type by 2 or 3 orders. And the direct ionization is susceptible to shield thickness. (author)

AFM studies on heavy ion irradiated YBCO single crystals

International Nuclear Information System (INIS)

Lakhani, Archana; Marhas, M.K.; Saravanan, P.; Ganesan, V.; Srinivasan, R.; Kanjilal, D.; Mehta, G.K.; Elizabeth, Suja; Bhat, H.L.

2000-01-01

Atomic Force Microscopy (AFM) is extensively used to characterise the surface morphology of high energy ion irradiated single crystals of high temperature superconductor - YBCO. Our earlier systematic studies on thin films of YBCO under high energy and heavy ion irradiation shows clear evidence of ion induced sputtering or erosion, even though the effect is more on the grain boundaries. These earlier results were supported by electrical resistance measurements. In order to understand more clearly, the nature of surface modification at these high energies, AFM studies were carried out on single crystals of YBCO. Single crystals were chosen in order to see the effect on crystallites alone without interference from grain boundaries. 200 MeV gold ions were used for investigation using the facilities available at Nuclear Science Centre, New Delhi. The type of ion and the range of energies were chosen to meet the threshold for electronically mediated defect production. The results are in conformity with our earlier studies and will be described in detail in the context of electronic energy loss mediated sputtering or erosion. (author)

Single event upset threshold estimation based on local laser irradiation

International Nuclear Information System (INIS)

Chumakov, A.I.; Egorov, A.N.; Mavritsky, O.B.; Yanenko, A.V.

1999-01-01

An approach for estimation of ion-induced SEU threshold based on local laser irradiation is presented. Comparative experiment and software simulation research were performed at various pulse duration and spot size. Correlation of single event threshold LET to upset threshold laser energy under local irradiation was found. The computer analysis of local laser irradiation of IC structures was developed for SEU threshold LET estimation. The correlation of local laser threshold energy with SEU threshold LET was shown. Two estimation techniques were suggested. The first one is based on the determination of local laser threshold dose taking into account the relation of sensitive area to local irradiated area. The second technique uses the photocurrent peak value instead of this relation. The agreement between the predicted and experimental results demonstrates the applicability of this approach. (authors)

Single ion hit detection set-up for the Zagreb ion microprobe

Science.gov (United States)

Smith, R. W.; Karlušić, M.; Jakšić, M.

2012-04-01

Irradiation of materials by heavy ions accelerated in MV tandem accelerators may lead to the production of latent ion tracks in many insulators and semiconductors. If irradiation is performed in a high resolution microprobe facility, ion tracks can be ordered by submicrometer positioning precision. However, full control of the ion track positioning can only be achieved by a reliable ion hit detection system that should provide a trigger signal irrespectively of the type and thickness of the material being irradiated. The most useful process that can be utilised for this purpose is emission of secondary electrons from the sample surface that follows the ion impact. The status report of the set-up presented here is based on the use of a channel electron multiplier (CEM) detector mounted on an interchangable sample holder that is inserted into the chamber in a close geometry along with the sample to be irradiated. The set-up has been tested at the Zagreb ion microprobe for different ions and energies, as well as different geometrical arrangements. For energies of heavy ions below 1 MeV/amu, results show that efficient (100%) control of ion impact can be achieved only for ions heavier than silicon. The successful use of the set-up is demonstrated by production of ordered single ion tracks in a polycarbonate film and by monitoring fluence during ion microbeam patterning of Foturan glass.

Compendium of Single Event Effects Test Results for Commercial Off-The-Shelf and Standard Electronics for Low Earth Orbit and Deep Space Applications

Science.gov (United States)

Reddell, Brandon D.; Bailey, Charles R.; Nguyen, Kyson V.; O'Neill, Patrick M.; Wheeler, Scott; Gaza, Razvan; Cooper, Jaime; Kalb, Theodore; Patel, Chirag; Beach, Elden R.;

Plastic flow produced by single ion impacts on metals

International Nuclear Information System (INIS)

Birtcher, R. C.

1998-01-01

Single ion impacts have been observed using in situ transmission electron microscopy and video recording with a time resolution of 33 milliseconds. Gold was irradiated at 50 K and room temperature. Single ion impacts produce holes, modify existing holes, and extrude material into the initial specimen hole and holes formed by other ion impacts. The same behavior is observed at both temperatures. At both temperatures, ion impacts result in craters and ejected material. Ion impacts produce more small craters than large ones for all ion masses, while heavier mass ions produce more and larger craters than lighter mass ions. This comparison is affected by the ion energy. As the energy of an ion is increased, the probability for deposition near the surface decreases and fewer craters are formed. For a given ion mass, crater production depends on the probability for displacement cascade production in the near surface region. Crater and holes are stable at room temperature, however, ion impacts near an existing crater may cause flow of material into the crater either reshaping or annihilating it. Holes and craters result from the explosive outflow of material from the molten zone of near-surface cascades. The outflow may take the form of molten material, a solid lid or an ejected particle. The surface is a major perturbation on displacement cascades resulting from ion impacts

Solar wind heavy ions from energetic coronal events

International Nuclear Information System (INIS)

Bame, S.J.

1978-01-01

Ions heavier than those of He can be resolved in the solar wind with electrostatic E/q analyzers when the local thermal temperatures are low. Ordinarily this condition prevails in the low speed solar wind found between high speed streams, i.e. the interstream, IS, solar wind. Various ions of O, Si and Fe are resolved in IS heavy ion spectra. Relative ion peak intensities indicate that the O ionization state is established in the IS coronal source regions at approx. 2.1 x 10 6 K while the state of Fe is frozen in at approx. 1.5 x 10 6 K farther out. Occasionally, anomalous spectra are observed in which the usually third most prominent ion peak, O 8+ , is depressed as are the Fe peaks ranging from Fe 12+ to Fe 7+ . A prominent peak in the usual Si 8+ position of IS spectra is self-consistently shown to be Fe 16+ . These features demonstrate that the ionization states were frozen in at higher than usual coronal temperatures. The source regions of these hot heavy ion spectra are identified as energetic coronal events including flares and nonflare coronal mass ejections. 24 references

Future challenges in single event effects for advanced CMOS technologies

International Nuclear Information System (INIS)

Guo Hongxia; Wang Wei; Luo Yinhong; Zhao Wen; Guo Xiaoqiang; Zhang Keying

2010-01-01

SEE have became a substantial Achilles heel for the reliability of space-based advanced CMOS technologies with features size downscaling. Future space and defense systems require identification and understanding of single event effects to develop hardening approaches for advanced technologies, including changes in device geometry and materials affect energy deposition, charge collection,circuit upset, parametric degradation devices. Topics covered include the impact of technology scaling on radiation response, including single event transients in high speed digital circuits, evidence for single event effects caused by proton direct ionization, and the impact for SEU induced by particle energy effects and indirect ionization. The single event effects in CMOS replacement technologies are introduced briefly. (authors)

Improved single ion cyclotron resonance mass spectroscopy

International Nuclear Information System (INIS)

Boyce, K.R.

1993-01-01

The author has improved the state of the art for precision mass spectroscopy of a mass doublet to below one part in 10 10 . By alternately loading single ions into a Penning trap, the author has determined the mass ratio M(CO + )/M(N + 2 ) = 0.999 598 887 74(11), an accuracy of 1 x 10 -10 . This is a factor of 4 improvement over previous measurements, and a factor of 10 better than the 1985 atomic mass table adjustment [WAA85a]. Much of the author's apparatus has been rebuilt, increasing the signal-to-noise ratio and improving the reliability of the machine. The typical time needed to make and cool a single ion has been reduced from about half an hour to under 5 minutes. This was done by a combination of faster ion-making and a much faster procedure for driving out ions of the wrong species. The improved S/N, in combination with a much better signal processing algorithm to extract the ion phase and frequency from the author's data, has substantially reduced the time required for the actual measurements. This is important now that the measurement time is a substantial fraction of the cycle time (the time to make a new ion and measure it). The improvements allow over 30 comparisons in one night, compared to 2 per night previously. This not only improves the statistics, but eliminates the possibility of large non-Gaussian errors due to sudden magnetic field shifts

Screened ion-ion interaction in mercury-chain compounds: Single chain

International Nuclear Information System (INIS)

Mohan, M.M.; Griffin, A.

1985-01-01

At room temperature, the mercury chains in Hg/sub 3-delta/AsF 6 exhibit phonons characteristic of a one-dimensional lattice. We calculate the screening of the Hg ion-ion interaction in a single chain by electrons moving in a cylindrical potential of finite radius, within the random-phase approximation. The resulting Bohm-Staver-type expression for the phonon velocity is (Z 2 mN/sub I//MN/sub e/)/sup 1/2/v/sub F/, where Z is the Hg ionic charge and N/sub I/ (N/sub e/) is the number of ions (electrons) per unit length. Use of the Tomonaga-Luttinger solution for the electronic response function (keeping only the small-momentum scattering processes) just renormalizes the Fermi velocity in this expression

The effect of a single recombination event

DEFF Research Database (Denmark)

Schierup, Mikkel Heide; Jensen, Thomas Mailund; Wiuf, Carsten

We investigate the variance in how visible a single recombination event is in a SNP data set as a function of the type of recombination event and its age. Data is simulated under the coalescent with recombination and inference is by the popular composite likelihood methods. The major determinant...

EVIDENCE FOR A COMMON ACCELERATION MECHANISM FOR ENRICHMENTS OF {sup 3}He AND HEAVY IONS IN IMPULSIVE SEP EVENTS

Energy Technology Data Exchange (ETDEWEB)

Mason, Glenn M. [Applied Physics Laboratory, Johns Hopkins University, Laurel, MD 20723 (United States); Nitta, Nariaki V. [Lockheed Martin Advanced Technology Center, Dept/A021S, B/252, 3251 Hanover Street, Palo Alto, CA 94304 (United States); Wiedenbeck, Mark E. [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 (United States); Innes, Davina E., E-mail: glenn.mason@jhuapl.edu, E-mail: nitta@lmsal.com, E-mail: mark.e.wiedenbeck@jpl.nasa.gov, E-mail: innes@mps.mpg.de [Max-Planck-Institut für Sonnensystemforschung, D-37077 Göttingen (Germany)

2016-06-01

We have surveyed the period 1997–2015 for a rare type of {sup 3}He-rich solar energetic particle (SEP) event, with enormously enhanced values of the S/O ratio, that differs from the majority of {sup 3}He-rich events, which show enhancements of heavy ions increasing smoothly with mass. Sixteen events were found, most of them small but with solar source characteristics similar to other {sup 3}He-rich SEP events. A single event on 2014 May 16 had higher intensities than the others, and curved Si and S spectra that crossed the O spectrum above ∼200 keV nucleon{sup −1}. Such crossings of heavy-ion spectra have never previously been reported. The dual enhancement of Si and S suggests that element Q / M ratio is critical to the enhancement since this pair of elements uniquely has very similar Q / M ratios over a wide range of temperatures. Besides {sup 3}He, Si, and S, in this same event the C, N, and Fe spectra also showed curved shape and enhanced abundances compared to O. The spectral similarities suggest that all have been produced from the same mechanism that enhances {sup 3}He. The enhancements are large only in the high-energy portion of the spectrum, and so affect only a small fraction of the ions. The observations suggest that the accelerated plasma was initially cool (∼0.4 MK) and was then heated to a few million kelvin to generate the preferred Q / M ratio in the range C–Fe. The temperature profile may be the distinct feature of these events that produces the unusual abundance signature.

Single ion impact detection and scanning probe aligned ion implantation for quantum bit formation

International Nuclear Information System (INIS)

Weis, Christoph D.

2011-01-01

Quantum computing and quantum information processing is a promising path to replace classical information processing via conventional computers which are approaching fundamental physical limits. Instead of classical bits, quantum bits (qubits) are utilized for computing operations. Due to quantum mechanical phenomena such as superposition and entanglement, a completely different way of information processing is achieved, enabling enhanced performance for certain problem sets. Various proposals exist on how to realize a quantum bit. Among them are electron or nuclear spins of defect centers in solid state systems. Two such candidates with spin degree of freedom are single donor atoms in silicon and nitrogen vacancy (NV) defect centers in diamond. Both qubit candidates possess extraordinary qualities which makes them promising building blocks. Besides certain advantages, the qubits share the necessity to be placed precisely in their host materials and device structures. A commonly used method is to introduce the donor atoms into the substrate materials via ion implantation. For this, focused ion beam systems can be used, or collimation techniques as in this work. A broad ion beam hits the back of a scanning probe microscope (SPM) cantilever with incorporated apertures. The high resolution imaging capabilities of the SPM allows the non destructive location of device areas and the alignment of the cantilever and thus collimated ion beam spot to the desired implant locations. In this work, this technique is explored, applied and pushed forward to meet necessary precision requirements. The alignment of the ion beam to surface features, which are sensitive to ion impacts and thus act as detectors, is demonstrated. The technique is also used to create NV center arrays in diamond substrates. Further, single ion impacts into silicon device structures are detected which enables deliberate single ion doping.

Single ion impact detection and scanning probe aligned ion implantation for quantum bit formation

Energy Technology Data Exchange (ETDEWEB)

Weis, Christoph D.

2011-10-04

Quantum computing and quantum information processing is a promising path to replace classical information processing via conventional computers which are approaching fundamental physical limits. Instead of classical bits, quantum bits (qubits) are utilized for computing operations. Due to quantum mechanical phenomena such as superposition and entanglement, a completely different way of information processing is achieved, enabling enhanced performance for certain problem sets. Various proposals exist on how to realize a quantum bit. Among them are electron or nuclear spins of defect centers in solid state systems. Two such candidates with spin degree of freedom are single donor atoms in silicon and nitrogen vacancy (NV) defect centers in diamond. Both qubit candidates possess extraordinary qualities which makes them promising building blocks. Besides certain advantages, the qubits share the necessity to be placed precisely in their host materials and device structures. A commonly used method is to introduce the donor atoms into the substrate materials via ion implantation. For this, focused ion beam systems can be used, or collimation techniques as in this work. A broad ion beam hits the back of a scanning probe microscope (SPM) cantilever with incorporated apertures. The high resolution imaging capabilities of the SPM allows the non destructive location of device areas and the alignment of the cantilever and thus collimated ion beam spot to the desired implant locations. In this work, this technique is explored, applied and pushed forward to meet necessary precision requirements. The alignment of the ion beam to surface features, which are sensitive to ion impacts and thus act as detectors, is demonstrated. The technique is also used to create NV center arrays in diamond substrates. Further, single ion impacts into silicon device structures are detected which enables deliberate single ion doping.

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

International Nuclear Information System (INIS)

Jia Yunpeng; Su Hongyuan; Hu Dongqing; Wu Yu; Jin Rui

2016-01-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. (paper)

How to resolve microsecond current fluctuations in single ion channels: The power of beta distributions

Science.gov (United States)

Schroeder, Indra

2015-01-01

Abstract A main ingredient for the understanding of structure/function correlates of ion channels is the quantitative description of single-channel gating and conductance. However, a wealth of information provided from fast current fluctuations beyond the temporal resolution of the recording system is often ignored, even though it is close to the time window accessible to molecular dynamics simulations. This kind of current fluctuations provide a special technical challenge, because individual opening/closing or blocking/unblocking events cannot be resolved, and the resulting averaging over undetected events decreases the single-channel current. Here, I briefly summarize the history of fast-current fluctuation analysis and focus on the so-called “beta distributions.” This tool exploits characteristics of current fluctuation-induced excess noise on the current amplitude histograms to reconstruct the true single-channel current and kinetic parameters. A guideline for the analysis and recent applications demonstrate that a construction of theoretical beta distributions by Markov Model simulations offers maximum flexibility as compared to analytical solutions. PMID:26368656

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Directory of Open Access Journals (Sweden)

Jeffrey C. McCallum

2012-01-01

Full Text Available Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single ion implantation and single ion detection for development of electronic devices for quantum computing. The scope of international research into single ion implantation is presented in the context of our own research in the Centre for Quantum Computation and Communication Technology in Australia. Various single ion detection schemes are presented, and limitations on dopant placement accuracy due to ion straggling are discussed together with pathways for scale-up to multiple quantum devices on the one chip. Possible future directions for ion implantation in quantum computing and communications are also discussed.

Measuring Single Event Upsets in the ATLAS Inner Tracker

CERN Multimedia

CERN. Geneva

2015-01-01

When the HL-LHC starts collecting data, the electronics inside will be subject to massive amounts of radiation. As a result, single event upsets could pose a threat to the ATLAS readout chain. The ABC130, a prototype front-end ASIC for the ATLAS inner tracker, must be tested for its susceptibility to single event upsets.

Single event burnout sensitivity of embedded field effect transistors

International Nuclear Information System (INIS)

Koga, R.; Crain, S.H.; Crawford, K.B.; Yu, P.; Gordon, M.J.

1999-01-01

Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described

Single event burnout sensitivity of embedded field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Koga, R.; Crain, S.H.; Crawford, K.B.; Yu, P.; Gordon, M.J.

1999-12-01

Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.

Crystal ball single event display

International Nuclear Information System (INIS)

Grosnick, D.; Gibson, A.; Allgower, C.; Alyea, J.; Argonne National Lab., IL

1997-01-01

The Single Event Display (SED) is a routine that is designed to provide information graphically about a triggered event within the Crystal Ball. The SED is written entirely in FORTRAN and uses the CERN-based HICZ graphing package. The primary display shows the amount of energy deposited in each of the NaI crystals on a Mercator-like projection of the crystals. Ten different shades and colors correspond to varying amounts of energy deposited within a crystal. Information about energy clusters is displayed on the crystal map by outlining in red the thirteen (or twelve) crystals contained within a cluster and assigning each cluster a number. Additional information about energy clusters is provided in a series of boxes containing useful data about the energy distribution among the crystals within the cluster. Other information shown on the event display include the event trigger type and data about π o 's and η's formed from pairs of clusters as found by the analyzer. A description of the major features is given, along with some information on how to install the SED into the analyzer

Acquisition and classification of static single-event upset cross section for SRAM-based FPGAs

International Nuclear Information System (INIS)

Yao Zhibin; Fan Ruyu; Guo Hongxia; Wang Zhongming; He Baoping; Zhang Fengqi; Zhang Keying

2011-01-01

In order to evaluate single event upsets (SEUs) in SRAM-based FPGAs and to find the sensitive resource in configuration memory, a heavy ions irradiation experiment was carried out on a Xilinx FPGAs device XCV300PQ240. The experiment was conducted to gain the static SEU cross section and classify the SEUs in configurations memory according to different resource uses. The results demonstrate that the inter-memory of SRAM-based FPGAs is extremely sensitive to heavy-ion-induced SEUs. The LUT and routing resources are the main source of SEUs in the configuration memory, which covers more than 97.46% of the total upsets. The SEU sensitivity of various resources is different. The IOB control bit and LUT elements are more sensitive,and more attention should be paid to the LUT elements in radiation hardening,which account for a quite large proportion of the configuration memory. (authors)

Fast recognition of single molecules based on single-event photon statistics

International Nuclear Information System (INIS)

Dong Shuangli; Huang Tao; Liu Yuan; Wang Jun; Zhang Guofeng; Xiao Liantuan; Jia Suotang

2007-01-01

Mandel's Q parameter, which is determined from single-event photon statistics, provides an alternative way to recognize single molecules with fluorescence detection, other than the second-order correlation function. It is shown that the Q parameter of an assumed ideal double-molecule fluorescence with the same average photon number as that of the sample fluorescence can act as the criterion for single-molecule recognition. The influence of signal-to-background ratio and the error estimates for photon statistics are also presented. We have applied this method to ascertain single Cy5 dye molecules within hundreds of milliseconds

Characteristics of ion distribution functions in dipolarizing flux bundles: Event studies

Science.gov (United States)

Runov, A.; Angelopoulos, V.; Artemyev, A.; Birn, J.; Pritchett, P. L.; Zhou, X.-Z.

2017-06-01

Taking advantage of multipoint observations from a repeating configuration of the five Time History of Events and Macroscale Interactions during Substorms (THEMIS) probes separated by 1 to 2 Earth radii (RE) along X, Y, and Z in the geocentric solar magnetospheric system (GSM), we study ion distribution functions collected by the probes during three dipolarizing flux bundle (DFB) events observed at geocentric distances 9 energy and twice the thermal energy, although the distribution in the ambient plasma sheet was isotropic. The anisotropic ion distribution in DFBs injected toward the inner magnetosphere may provide the free energy for waves and instabilities, which are important elements of particle energization.

Development of a keV single-ion-implanter for nanofabrication

International Nuclear Information System (INIS)

Yang, C.; Jamieson, D.N.; Hopf, T.; Tamanyan, G.; Spizziri, P.; Pakes, C.; Andresen, S.E.; Hudson, F.; Gauja, E.; Dzurak, A.; Clark, R.G.

2005-01-01

Traditional methods of doping semiconductors have a difficulty meeting the demand for high precision doping due to large statistical fluctuations in the numbers of dopant atoms introduced in the ever shrinking volume in micro- and nano-electronics devices, especially when the fabrication process approaches the nanometre scale. The statistical fluctuations in doping semiconductors for the fabrication of devices with a very small feature size may lead to inconsistent and unreliable performance. This paper describes the adaptation of a commercial ion implanter into a single-ion-implantation system for the accurate delivery of dopants into a nanometre or micrometre area in a silicon substrate. All the implanted ions can be accurately counted with near 100% certainty through online detection using the silicon substrate itself as an ion detector. A variety of ion species including B + , N + , P + at the energy range of 10-15 keV can be delivered in the single ion implantation system. (author). 6 refs., 6 figs

Application of heavy-ion microbeam system at Kyoto University: Energy response for imaging plate by single ion irradiation

International Nuclear Information System (INIS)

Tosaki, M.; Nakamura, M.; Hirose, M.; Matsumoto, H.

2011-01-01

A heavy-ion microbeam system for cell irradiation has been developed using an accelerator at Kyoto University. We have successfully developed proton-, carbon-, fluorine- and silicon-beams in order to irradiate a micro-meter sized area with ion counting, especially single ion irradiation. In the heavy-ion microbeam system, an imaging plate (IP) was utilized for beam diagnostics on the irradiation. The IP is widely used for radiography studies in biology. However, there are a few studies on the low linear energy transfer (LET) by single ions, i.e., low-intensity exposure. Thus we have investigated the energy response for the IP, which can be utilized for microbeam diagnostics.

Energy time dispersion of a new class of magnetospheric ion events observed near the Earth's bow shock

Directory of Open Access Journals (Sweden)

G. C. Anagnostopoulos

2000-01-01

Full Text Available We have analyzed high time resolution (\\geq6 s data during the onset and the decay phase of several energetic (\\geq35 keV ion events observed near the Earth's bow shock by the CCE/AMPTE and IMP-7/8 spacecraft, during times of intense substorm/geomagnetic activity. We found that forward energy dispersion at the onset of events (earlier increase of middle energy ions and/or a delayed fall of the middle energy ion fluxes at the end of events are often evident in high time resolution data. The energy spectra at the onset and the decay of this kind of events show a characteristic hump at middle (50-120 keV energies and the angular distributions display either anisotropic or broad forms. The time scale of energy dispersion in the ion events examined was found to range from several seconds to \\sim1 h depending on the ion energies compared and on the rate of variation of the Interplanetary Magnetic Field (IMF direction. Several canditate processes are discussed to explain the observations and it is suggested that a rigidity dependent transport process of magnetospheric particles within the magnetosheath is most probably responsible for the detection of this new type of near bow shock magnetospheric ion events. The new class of ion events was observed within both the magnetosheath and the upstream region.Key words. Interplanetary physics (energetic particles; planetary bow shocks

Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

Science.gov (United States)

Irom, Farokh; Farmanesh, Farhad; Kouba, Coy K.

2006-01-01

Single-event upset effects from heavy ions are measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes. The results are compared with previous results for SOI microprocessors with feature sizes of 130 and 180 nm. The cross section of the 90 nm SOI processors is smaller than results for 130 and 180 nm counterparts, but the threshold is about the same. The scaling of the cross section with reduction of feature size and core voltage for SOI microprocessors is discussed.

STEREO/SEPT observations of upstream particle events: almost monoenergetic ion beams

Directory of Open Access Journals (Sweden)

A. Klassen

2009-05-01

Full Text Available We present observations of Almost Monoenergetic Ion (AMI events in the energy range of 100–1200 keV detected with the Solar Electron and Proton Telescope (SEPT onboard both STEREO spacecraft. The energy spectrum of AMI events contain 1, 2, or 3 narrow peaks with the relative width at half maximum of 0.1–0.7 and their energy maxima varies for different events from 120 to 1200 keV. These events were detected close to the bow-shock (STEREO-A&B and to the magnetopause at STEREO-B as well as unexpectedly far upstream of the bow-shock and far away from the magnetotail at distances up to 1100 R_E (STEREO-B and 1900 R_E (STEREO-A. We discuss the origin of AMI events, the connection to the Earth's bow-shock and to the magnetosphere, and the conditions of the interplanetary medium and magnetosphere under which these AMI bursts occur. Evidence that the detected spectral peaks were caused by quasi-monoenergetic beams of protons, helium, and heavier ions are given. Furthermore, we present the spatial distribution of all AMI events from December 2006 until August 2007.

Relationship between single-event upset immunity and fabrication processes of recent memories; Relations entre l'immunite au SEU et les procedes de fabrication de memoires recentes

Energy Technology Data Exchange (ETDEWEB)

Nemoto, N.; Shindou, H.; Kuboyama, S.; Matsuda, S. [National Space Development Agency of Japan, Ibaraki-ken (Japan); Itoh, H.; Okada, S.; Nashiyama, I. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

1999-07-01

Single-Event upset (SEU) immunity for commercial devices were evaluated by irradiation tests using high-energy heavy ions. We show test results and describe the relationship between observed SEU and structures/fabrication processes. We have evaluated single-even upset (SEU) tolerance of recent commercial memory devices using high energy heavy ions in order to find relationship between SEU rate and their fabrication process. It was revealed that the change of the process parameter gives much effect for the SEU rate of the devices. (authors)

MARTINI: An event generator for relativistic heavy-ion collisions

International Nuclear Information System (INIS)

Schenke, Bjoern; Gale, Charles; Jeon, Sangyong

2009-01-01

We introduce the modular algorithm for relativistic treatment of heavy ion interactions (MARTINI), a comprehensive event generator for the hard and penetrating probes in high-energy nucleus-nucleus collisions. Its main components are a time-evolution model for the soft background, PYTHIA 8.1, and the McGill-Arnold, Moore, and Yaffe (AMY) parton-evolution scheme, including radiative as well as elastic processes. This allows us to generate full event configurations in the high p T region that take into account thermal quantum chromodynamic (QCD) and quantum electrodynamic (QED) effects as well as effects of the evolving medium. We present results for the neutral pion nuclear modification factor in Au+Au collisions at the BNL Relativistic Heavy Ion Collider as a function of p T for different centralities and also as a function of the angle with respect to the reaction plane for noncentral collisions. Furthermore, we study the production of high-transverse-momentum photons, incorporating a complete set of photon-production channels.

Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA

Science.gov (United States)

Tonfat, Jorge; Kastensmidt, Fernanda Lima; Artola, Laurent; Hubert, Guillaume; Medina, Nilberto H.; Added, Nemitala; Aguiar, Vitor A. P.; Aguirre, Fernando; Macchione, Eduardo L. A.; Silveira, Marcilei A. G.

2017-08-01

This paper shows the impact of low linear energy transfer heavy ions on the reliability of 28-nm Bulk static random access memory (RAM) cells from Artix-7 field-programmable gate array. Irradiation tests on the ground showed significant differences in the multiple bit upset cross section of configuration RAM and block RAM memory cells under various angles of incidence and rotation of the device. Experimental data are analyzed at transistor level by using the single-event effect prediction tool called multiscale single-event phenomenon prediction platform coupled with SPICE simulations.

New insight into the parasitic bipolar amplification effect in single event transient production

International Nuclear Information System (INIS)

Chen Jian-Jun; Chen Shu-Ming; Liang Bin; Deng Ke-Feng

2012-01-01

In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P + -well layer and can be removed by a buried SO 2 layer. (condensed matter: structural, mechanical, and thermal properties)

Resonator QED experiments with single 40Ca+ ions

International Nuclear Information System (INIS)

Lange, B.

2006-01-01

Combining an optical resonator with an ion trap provides the possibility for QED experiments with single or few particles interacting with a single mode of the electro-magnetic field (Cavity-QED). In the present setup, fluctuations in the count rate on a time scale below 30 seconds were purely determined by the photon statistics due to finite emission and detection efficiency, whereas a marginal drift of the system was noticeable above 200 seconds. To find methods to increase the efficiency of the photon source, investigations were conducted and experimental improvements of the setup implemented in the frame of this thesis. Damping of the resonator field and coupling of ion and field were considered as the most important factors. To reduce the damping of the resonator field, a resonator with a smaller transmissivity of the output mirror was set up. The linear trap used in the experiment allows for the interaction of multiple ions with the resonator field, so that more than one photon may be emitted per pump pulse. This was investigated in this thesis with two ions coupled to the resonator. The cross correlation of the emitted photons was measured with the Hanbury Brown-Twiss method. (orig.)

MMS Observations of the Evolution of Ion-Scale Flux Transfer Events

Science.gov (United States)

Zhao, C.; Russell, C. T.; Strangeway, R. J.; Paterson, W.; Petrinec, S.; Zhou, M.; Anderson, B. J.; Baumjohann, W.; Bromund, K. R.; Chutter, M.; Fischer, D.; Gershman, D. J.; Giles, B. L.; Le, G.; Nakamura, R.; Plaschke, F.; Slavin, J. A.; Torbert, R. B.

2017-12-01

Flux transfer events are key processes in the solar wind-magnetosphere interaction. Previously, the observed flux transfer events have had scale sizes of 10,000 km radius in the cross-section and connect about 2 MWb magnetic flux from solar wind to the terrestrial magnetosphere. Recently, from the high-temporal resolution MMS magnetic field data, many ion-scale FTEs have been found. These FTEs contains only about 2 kWb magnetic flux and are believed to be in an early stage of FTE evolution. With the help of the well-calibrated MMS data, we are also able to determine the velocity profile and forces within the FTE events. We find that some ion-scale FTEs are expanding as we expect, but there are also contracting FTEs. We examine the differences between the two classes of FTEs and their differences with the larger previously studied class of FTE.

Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator

Energy Technology Data Exchange (ETDEWEB)

Bakerenkov, A.S., E-mail: as_bakerenkov@list.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Belyakov, V.V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Kozyukov, A.E. [Joint-Stock Company Institute of Space Device Engineering (JSC ISDE), Moscow (Russian Federation); Pershenkov, V.S.; Solomatin, A.V.; Shurenkov, V.V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation)

2015-02-11

The temperature control system for the study of single event disruptions produced by hard ion impacts in integrated circuits is described. Heating and cooling of the irradiated device are achieved using thermoelectric modules (Peltier modules). The thermodynamic performance of the system is estimated. The technique for the numerical estimation of the main parameters of the temperature control system for cooling and heating is considered. The results of a test of the system in a vacuum cell of an accelerator are presented.

Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator

International Nuclear Information System (INIS)

Bakerenkov, A.S.; Belyakov, V.V.; Kozyukov, A.E.; Pershenkov, V.S.; Solomatin, A.V.; Shurenkov, V.V.

2015-01-01

The temperature control system for the study of single event disruptions produced by hard ion impacts in integrated circuits is described. Heating and cooling of the irradiated device are achieved using thermoelectric modules (Peltier modules). The thermodynamic performance of the system is estimated. The technique for the numerical estimation of the main parameters of the temperature control system for cooling and heating is considered. The results of a test of the system in a vacuum cell of an accelerator are presented

Feasibility of Observing and Characterizing Single Ion Strikes in Microelectronic Components

International Nuclear Information System (INIS)

Dingreville, Remi Philippe Michel; Hattar, Khalid Mikhiel; Bufford, Daniel Charles

2015-01-01

The transient degradation of semiconductor device performance under irradiation has long been an issue of concern. A single high-energy charged particle can degrade or permanently destroy the microelectronic component, potentially altering the course or function of the systems. Disruption of the the crystalline structure through the introduction of quasi-stable defect structures can change properties from semiconductor to conductor. Typically, the initial defect formation phase is followed by a recovery phase in which defect-defect or defect-dopant interactions modify the characteristics of the damaged structure. In this LDRD Express, in-situ ion irradiation transmission microscopy (TEM) in-situ TEM experiments combined with atomistic simulations have been conducted to determine the feasibility of imaging and characterizing the defect structure resulting from a single cascade in silicon. In-situ TEM experiments have been conducted to demonstrate that a single ion strike can be observed in Si thin films with nanometer resolution in real time using the in-situ ion irradiation transmission electron microscope (I 3 TEM). Parallel to this experimental effort, ion implantation has been numerically simulated using Molecular Dynamics (MD). This numerical framework provides detailed predictions of the damage and follow the evolution of the damage during the first nanoseconds. The experimental results demonstrate that single ion strike can be observed in prototypical semiconductors.

Effects of drain-wall in mitigating N-hit single event transient via 45 nm CMOS process

International Nuclear Information System (INIS)

Xu, X Y; Tang, M H; Xiao, Y G; Yan, S A; Zhang, W L; Li, Z; Xiong, Y; Zhao, W; Guo, H X

2015-01-01

A three-dimensional (3D) technology computer-aided design (TCAD) simulation in a novel layout technique for N-hit single event transient (SET) mitigation based on drain-wall layout technique is proposed. Numerical simulations of both single-device and mixed-mode show that the proposed layout technique designed with 45 nm CMOS process can efficiently reduce not only charge collection but also SET pulse widths (W SET ). What is more, simulations show that impacts caused by part of ion-incidents can be shielded with this novel layout technique. When compared with conventional layout technique and guard drain layout technique, we find that the proposed novel layout technique can provide the best benefit of SET mitigation with a small sacrifice in effective area. (paper)

Experimental investigations of single-electron detachment processes from H- ions colliding with MeV/u, highly charged ions

International Nuclear Information System (INIS)

Tawara, H.; Tonuma, T.; Kumagai, H.; Imai, T.; Uskov, D.B.; Presnyakov, L.P.

1999-01-01

Single electron detachment processes from negative hydrogen ions under collisions with MeV/u highly charged ions have been investigated using the so-called crossed-beams technique. The preliminary results of the single-electron detachment cross sections obtained is found to be in crude agreement with some empirical and theoretical estimations. (orig.)

Demonstration of Single-Barium-Ion Sensitivity for Neutrinoless Double-Beta Decay Using Single-Molecule Fluorescence Imaging

Energy Technology Data Exchange (ETDEWEB)

McDonald, A. D.; Jones, B. J. P.; Nygren, D. R.; Adams, C.; Álvarez, V.; Azevedo, C. D. R.; Benlloch-Rodríguez, J. M.; Borges, F. I. G. M.; Botas, A.; Cárcel, S.; Carrión, J. V.; Cebrián, S.; Conde, C. A. N.; Díaz, J.; Diesburg, M.; Escada, J.; Esteve, R.; Felkai, R.; Fernandes, L. M. P.; Ferrario, P.; Ferreira, A. L.; Freitas, E. D. C.; Goldschmidt, A.; Gómez-Cadenas, J. J.; González-Díaz, D.; Gutiérrez, R. M.; Guenette, R.; Hafidi, K.; Hauptman, J.; Henriques, C. A. O.; Hernandez, A. I.; Hernando Morata, J. A.; Herrero, V.; Johnston, S.; Labarga, L.; Laing, A.; Lebrun, P.; Liubarsky, I.; López-March, N.; Losada, M.; Martín-Albo, J.; Martínez-Lema, G.; Martínez, A.; Monrabal, F.; Monteiro, C. M. B.; Mora, F. J.; Moutinho, L. M.; Muñoz Vidal, J.; Musti, M.; Nebot-Guinot, M.; Novella, P.; Palmeiro, B.; Para, A.; Pérez, J.; Querol, M.; Repond, J.; Renner, J.; Riordan, S.; Ripoll, L.; Rodríguez, J.; Rogers, L.; Santos, F. P.; dos Santos, J. M. F.; Simón, A.; Sofka, C.; Sorel, M.; Stiegler, T.; Toledo, J. F.; Torrent, J.; Tsamalaidze, Z.; Veloso, J. F. C. A.; Webb, R.; White, J. T.; Yahlali, N.

2018-03-01

A new method to tag the barium daughter in the double beta decay of $^{136}$Xe is reported. Using the technique of single molecule fluorescent imaging (SMFI), individual barium dication (Ba$^{++}$) resolution at a transparent scanning surface has been demonstrated. A single-step photo-bleach confirms the single ion interpretation. Individual ions are localized with super-resolution ($\\sim$2~nm), and detected with a statistical significance of 12.9~$\\sigma$ over backgrounds. This lays the foundation for a new and potentially background-free neutrinoless double beta decay technology, based on SMFI coupled to high pressure xenon gas time projection chambers.

Demonstration of Single-Barium-Ion Sensitivity for Neutrinoless Double-Beta Decay Using Single-Molecule Fluorescence Imaging

Science.gov (United States)

McDonald, A. D.; Jones, B. J. P.; Nygren, D. R.; Adams, C.; Álvarez, V.; Azevedo, C. D. R.; Benlloch-Rodríguez, J. M.; Borges, F. I. G. M.; Botas, A.; Cárcel, S.; Carrión, J. V.; Cebrián, S.; Conde, C. A. N.; Díaz, J.; Diesburg, M.; Escada, J.; Esteve, R.; Felkai, R.; Fernandes, L. M. P.; Ferrario, P.; Ferreira, A. L.; Freitas, E. D. C.; Goldschmidt, A.; Gómez-Cadenas, J. J.; González-Díaz, D.; Gutiérrez, R. M.; Guenette, R.; Hafidi, K.; Hauptman, J.; Henriques, C. A. O.; Hernandez, A. I.; Hernando Morata, J. A.; Herrero, V.; Johnston, S.; Labarga, L.; Laing, A.; Lebrun, P.; Liubarsky, I.; López-March, N.; Losada, M.; Martín-Albo, J.; Martínez-Lema, G.; Martínez, A.; Monrabal, F.; Monteiro, C. M. B.; Mora, F. J.; Moutinho, L. M.; Muñoz Vidal, J.; Musti, M.; Nebot-Guinot, M.; Novella, P.; Palmeiro, B.; Para, A.; Pérez, J.; Querol, M.; Repond, J.; Renner, J.; Riordan, S.; Ripoll, L.; Rodríguez, J.; Rogers, L.; Santos, F. P.; dos Santos, J. M. F.; Simón, A.; Sofka, C.; Sorel, M.; Stiegler, T.; Toledo, J. F.; Torrent, J.; Tsamalaidze, Z.; Veloso, J. F. C. A.; Webb, R.; White, J. T.; Yahlali, N.; NEXT Collaboration

2018-03-01

A new method to tag the barium daughter in the double-beta decay of Xe 136 is reported. Using the technique of single molecule fluorescent imaging (SMFI), individual barium dication (Ba++ ) resolution at a transparent scanning surface is demonstrated. A single-step photobleach confirms the single ion interpretation. Individual ions are localized with superresolution (˜2 nm ), and detected with a statistical significance of 12.9 σ over backgrounds. This lays the foundation for a new and potentially background-free neutrinoless double-beta decay technology, based on SMFI coupled to high pressure xenon gas time projection chambers.

Designing Artificial Solid-Electrolyte Interphases for Single-Ion and High-Efficiency Transport in Batteries

KAUST Repository

Tu, Zhengyuan; Choudhury, Snehashis; Zachman, Michael J.; Wei, Shuya; Zhang, Kaihang; Kourkoutis, Lena F.; Archer, Lynden A.

2017-01-01

energy storage technologies. In lithium-ion batteries, electrolytes with single- or near-single-ion conductivity reduce losses caused by ion polarization. In emergent lithium or sodium metal batteries, they maintain high conductivity at the anode

Influence of edge effects on single event upset susceptibility of SOI SRAMs

International Nuclear Information System (INIS)

Gu, Song; Liu, Jie; Zhao, Fazhan; Zhang, Zhangang; Bi, Jinshun; Geng, Chao; Hou, Mingdong; Liu, Gang; Liu, Tianqi; Xi, Kai

2015-01-01

An experimental investigation of the single event upset (SEU) susceptibility for heavy ions at tilted incidence was performed. The differences of SEU cross-sections between tilted incidence and normal incidence at equivalent effective linear energy transfer were 21% and 57% for the silicon-on-insulator (SOI) static random access memories (SRAMs) of 0.5 μm and 0.18 μm feature size, respectively. The difference of SEU cross-section raised dramatically with increasing tilt angle for SOI SRAM of deep-submicron technology. The result of CRÈME-MC simulation for tilted irradiation of the sensitive volume indicates that the energy deposition spectrum has a substantial tail extending into the low energy region. The experimental results show that the influence of edge effects on SEU susceptibility cannot be ignored in particular with device scaling down

Line-edge roughness induced single event transient variation in SOI FinFETs

International Nuclear Information System (INIS)

Wu Weikang; An Xia; Jiang Xiaobo; Chen Yehua; Liu Jingjing; Zhang Xing; Huang Ru

2015-01-01

The impact of process induced variation on the response of SOI FinFET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When FinFET biased at OFF state configuration (V gs = 0, V ds = V dd ) is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse (single event transient, SET) is consequently formed. The results reveal that with the presence of line-edge roughness (LER), which is one of the major variation sources in nano-scale FinFETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered: type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters, correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size. (paper)

Spectroscopy and nonclassical fluorescence properties of single trapped Ba+ ions

International Nuclear Information System (INIS)

Bolle, J.

1998-06-01

This thesis reports on the setup and application of an experimental apparatus for spectroscopic and quantum optical investigations of a single Barium ion in a Paul trap. The realization of the apparatus, which consists of the ion trap in ultra high vacuum, two laser systems, and a photon counting detection system, is described in detail, with particular consideration of the noise sources like stray light and laser frequency instabilities. The two lasers at 493 nm and 650 nm needed to continuously excite resonance fluorescence from the Barium ion have been realized using diode lasers only. The preparation of a single localized Barium ion is described, in particular its optical cooling with the laser light and the minimization of induced vibration in the trapping potential. The purely quantum mechanical property of antibunching is observed by measuring the intensity correlation function of resonance fluorescence from the trapped and cooled ion. Interference properties of the single ion resonance fluorescence are investigated with a Mach-Zehnder interferometer. From the measured high-contrast interference signal it is proven that each individual fluorescence photon interferes with itself. The fluorescence excitation spectrum, on varying one laser frequency, is also measured and exhibits dark resonances. These measurements are compared to calculations based on optical Bloch equations for the 8 atomic levels involved. Future experiments, in particular the detection of reduced quantum fluctuations (squeezing) in one quadrature component of the resonance fluorescence, are discussed. (author)

Probing Surface Electric Field Noise with a Single Ion

Science.gov (United States)

2013-07-30

potentials is housed inside a Faraday cage providing more than 40 dB of attenuation for electromagnetic fields in the range of frequencies between 200...and measuring the ion quantum state [16]. Thus, by measuring the effect of electric field noise on the motional quantum state of the ion, one can probe...understand these effects . In summary, we have probed the electric field noise near an aluminum-copper surface at room temperature using a single trapped ion

A simple and rapid method for high-resolution visualization of single-ion tracks

Directory of Open Access Journals (Sweden)

Masaaki Omichi

2014-11-01

Full Text Available Prompt determination of spatial points of single-ion tracks plays a key role in high-energy particle induced-cancer therapy and gene/plant mutations. In this study, a simple method for the high-resolution visualization of single-ion tracks without etching was developed through the use of polyacrylic acid (PAA-N, N’-methylene bisacrylamide (MBAAm blend films. One of the steps of the proposed method includes exposure of the irradiated films to water vapor for several minutes. Water vapor was found to promote the cross-linking reaction of PAA and MBAAm to form a bulky cross-linked structure; the ion-track scars were detectable at a nanometer scale by atomic force microscopy. This study demonstrated that each scar is easily distinguishable, and the amount of generated radicals of the ion tracks can be estimated by measuring the height of the scars, even in highly dense ion tracks. This method is suitable for the visualization of the penumbra region in a single-ion track with a high spatial resolution of 50 nm, which is sufficiently small to confirm that a single ion hits a cell nucleus with a size ranging between 5 and 20 μm.

A simple and rapid method for high-resolution visualization of single-ion tracks

Energy Technology Data Exchange (ETDEWEB)

Omichi, Masaaki [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Osaka 565-0871 (Japan); Center for Collaborative Research, Anan National College of Technology, Anan, Tokushima 774-0017 (Japan); Choi, Wookjin; Sakamaki, Daisuke; Seki, Shu, E-mail: seki@chem.eng.osaka-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Osaka 565-0871 (Japan); Tsukuda, Satoshi [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, Miyagi 980-8577 (Japan); Sugimoto, Masaki [Japan Atomic Energy Agency, Takasaki Advanced Radiation Research Institute, Gunma, Gunma 370-1292 (Japan)

2014-11-15

Prompt determination of spatial points of single-ion tracks plays a key role in high-energy particle induced-cancer therapy and gene/plant mutations. In this study, a simple method for the high-resolution visualization of single-ion tracks without etching was developed through the use of polyacrylic acid (PAA)-N, N’-methylene bisacrylamide (MBAAm) blend films. One of the steps of the proposed method includes exposure of the irradiated films to water vapor for several minutes. Water vapor was found to promote the cross-linking reaction of PAA and MBAAm to form a bulky cross-linked structure; the ion-track scars were detectable at a nanometer scale by atomic force microscopy. This study demonstrated that each scar is easily distinguishable, and the amount of generated radicals of the ion tracks can be estimated by measuring the height of the scars, even in highly dense ion tracks. This method is suitable for the visualization of the penumbra region in a single-ion track with a high spatial resolution of 50 nm, which is sufficiently small to confirm that a single ion hits a cell nucleus with a size ranging between 5 and 20 μm.

A full-angle Monte-Carlo scattering technique including cumulative and single-event Rutherford scattering in plasmas

Science.gov (United States)

Higginson, Drew P.

2017-11-01

We describe and justify a full-angle scattering (FAS) method to faithfully reproduce the accumulated differential angular Rutherford scattering probability distribution function (pdf) of particles in a plasma. The FAS method splits the scattering events into two regions. At small angles it is described by cumulative scattering events resulting, via the central limit theorem, in a Gaussian-like pdf; at larger angles it is described by single-event scatters and retains a pdf that follows the form of the Rutherford differential cross-section. The FAS method is verified using discrete Monte-Carlo scattering simulations run at small timesteps to include each individual scattering event. We identify the FAS regime of interest as where the ratio of temporal/spatial scale-of-interest to slowing-down time/length is from 10-3 to 0.3-0.7; the upper limit corresponds to Coulomb logarithm of 20-2, respectively. Two test problems, high-velocity interpenetrating plasma flows and keV-temperature ion equilibration, are used to highlight systems where including FAS is important to capture relevant physics.

Development of noise-suppressed detector for single ion hit system

Energy Technology Data Exchange (ETDEWEB)

Sakai, Takuro; Hamano, Tsuyoshi; Suda, Tamotsu; Hirao, Toshio; Kamiya, Tomihiro [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

A noise-suppressed detector for single ion detection has been developed, and combined with the heavy ion microbeam apparatus. This detector consists of a pair of micro channel plates (MCP`s) and a very thin carbon foil. The detection signal is formed by the coincidence of the signals from these MCP`s, so that this detector and the coincidence measurement unit can reduce miscounting in the circuit. The detection efficiency for 15 MeV heavy ions was evaluated to be comparable to that of a silicon surface-barrier detector (SSD) and the miscounting rate was 4 orders lower than the noise rate of a single MCP. The rise time of the detection signal was also estimated. (author)

Ion implantation of CdTe single crystals

International Nuclear Information System (INIS)

Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

2017-01-01

Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (10"1"7 1/cm"2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

Ion implantation induced blistering of rutile single crystals

Energy Technology Data Exchange (ETDEWEB)

Xiang, Bing-Xi [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Jiao, Yang [College of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250100 (China); Guan, Jing [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Wang, Lei [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China)

2015-07-01

The rutile single crystals were implanted by 200 keV He{sup +} ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He{sup +} ion implantation with appropriate fluence and the following thermal annealing.

Composition variations of low energy heavy ions during large solar energetic particle events

Energy Technology Data Exchange (ETDEWEB)

Ho, George C., E-mail: George.Ho@jhuapl.edu; Mason, Glenn M., E-mail: Glenn.Mason@jhuapl.edu [Johns Hopkins University Applied Physics Laboratory, Laurel, MD 20723 (United States)

2016-03-25

The time-intensity profile of large solar energetic particle (SEP) event is well organized by solar longitude as observed at Earth orbit. This is mostly due to different magnetic connection to the shock that is associated with large SEP event propagates from the Sun to the heliosphere. Earlier studies have shown event averaged heavy ion abundance ratios can also vary as a function of solar longitude. It was found that the Fe/O ratio for high energy particle (>10 MeV/nucleon) is higher for those western magnetically well connected events compare to the eastern events as observed at L1 by the Advanced Composition Explorer (ACE) spacecraft. In this paper, we examined the low energy (∼1 MeV/nucleon) heavy ions in 110 isolated SEP events from 2009 to the end of 2014. In addition, the optical and radio signatures for all of our events are identified and when data are available we also located the associated coronal mass ejection (CME) data. Our survey shows a higher Fe/O ratio at events in the well-connected region, while there are no corrections between the event averaged elemental composition with the associated coronal mass ejection speed. This is inconsistent with the higher energy results, but inline with other recent low-energy measurements.

Single Event Burnout in DC-DC Converters for the LHC Experiments

Energy Technology Data Exchange (ETDEWEB)

Claudio H. Rivetta et al.

2001-09-24

High voltage transistors in DC-DC converters are prone to catastrophic Single Event Burnout in the LHC radiation environment. This paper presents a systematic methodology to analyze single event effects sensitivity in converters and proposes solutions based on de-rating input voltage and output current or voltage.

Designing Artificial Solid-Electrolyte Interphases for Single-Ion and High-Efficiency Transport in Batteries

KAUST Repository

Tu, Zhengyuan

2017-09-21

Substrates able to rectify transport of ions based on charge and/or size are ubiquitous in biological systems. Electrolytes and interphases that selectively transport electrochemically active ions are likewise of broad interest in all electrical energy storage technologies. In lithium-ion batteries, electrolytes with single- or near-single-ion conductivity reduce losses caused by ion polarization. In emergent lithium or sodium metal batteries, they maintain high conductivity at the anode and stabilize metal deposition by fundamental mechanisms. We report that 20- to 300-nm-thick, single-ion-conducting membranes deposited at the anode enable electrolytes with the highest combination of cation transference number, ionic conductivity, and electrochemical stability reported. By means of direct visualization we find that single-ion membranes also reduce dendritic deposition of Li in liquids. Galvanostatic measurements further show that the electrolytes facilitate long (3 mAh) recharge of full Li/LiNi0.8Co0.15Al0.05O2 (NCA) cells with high cathode loadings (3 mAh cm−2/19.9 mg cm−2) and at high current densities (3 mA cm−2).

Talys calculations for evaluation of neutron-induced single-event upset cross sections

Energy Technology Data Exchange (ETDEWEB)

Bourselier, Jean-Christophe

2005-08-15

The computer code TALYS has been used to calculate interactions between cosmic-ray neutrons and silicon nuclei with the goal to describe single-event upset (SEU) cross sections in microelectronics devices. Calculations for the Si(n,X) reaction extend over an energy range of 2 to 200 MeV. The obtained energy spectra of the resulting residuals and light-ions have been integrated using several different critical charges as SEU threshold. It is found that the SEU cross section seems largely to be dominated by {sup 28}Si recoils from elastic scattering. Furthermore, the shape of the SEU cross section as a function of the energy of the incoming neutron changes drastically with decreasing critical charge. The results presented in this report stress the importance of performing studies at mono-energetic neutron beams to advance the understanding of the underlying mechanisms causing SEUs.

Talys calculations for evaluation of neutron-induced single-event upset cross sections

International Nuclear Information System (INIS)

Bourselier, Jean-Christophe

2005-08-01

The computer code TALYS has been used to calculate interactions between cosmic-ray neutrons and silicon nuclei with the goal to describe single-event upset (SEU) cross sections in microelectronics devices. Calculations for the Si(n,X) reaction extend over an energy range of 2 to 200 MeV. The obtained energy spectra of the resulting residuals and light-ions have been integrated using several different critical charges as SEU threshold. It is found that the SEU cross section seems largely to be dominated by 28 Si recoils from elastic scattering. Furthermore, the shape of the SEU cross section as a function of the energy of the incoming neutron changes drastically with decreasing critical charge. The results presented in this report stress the importance of performing studies at mono-energetic neutron beams to advance the understanding of the underlying mechanisms causing SEUs

Event-by-event simulation of single-neutron experiments to test uncertainty relations

International Nuclear Information System (INIS)

Raedt, H De; Michielsen, K

2014-01-01

Results from a discrete-event simulation of a recent single-neutron experiment that tests Ozawa's generalization of Heisenberg's uncertainty relation are presented. The event-based simulation algorithm reproduces the results of the quantum theoretical description of the experiment but does not require the knowledge of the solution of a wave equation, nor does it rely on detailed concepts of quantum theory. In particular, the data from these non-quantum simulations satisfy uncertainty relations derived in the context of quantum theory. (paper)

Sub-Poissonian statistics of quantum jumps in single molecule or atomic ion

International Nuclear Information System (INIS)

Osad'ko, I.S.; Gus'kov, D.N.

2007-01-01

A theory for statistics of quantum jumps in single molecule or ion driven by continues wave laser field is developed. These quantum jumps can relate to nonradiative singlet-triplet transitions in a molecule or to on → off jumps in a single ion with shelving processes. Distribution function w N (T) of quantum jumps in time interval T is found. Computer simulation of quantum jumps is realized. Statistical treatment of simulated jumps reveals sub-Poissonian statistics of quantum jumps. The theoretical distribution function w N (T) fits well the distribution of jumps found from simulated data. Experimental data on quantum jumps found in experiments with single Hg + ion are described by the function w N (T) well

Single-cell analysis of pyroptosis dynamics reveals conserved GSDMD-mediated subcellular events that precede plasma membrane rupture.

Science.gov (United States)

de Vasconcelos, Nathalia M; Van Opdenbosch, Nina; Van Gorp, Hanne; Parthoens, Eef; Lamkanfi, Mohamed

2018-04-17

Pyroptosis is rapidly emerging as a mechanism of anti-microbial host defense, and of extracellular release of the inflammasome-dependent cytokines interleukin (IL)-1β and IL-18, which contributes to autoinflammatory pathology. Caspases 1, 4, 5 and 11 trigger this regulated form of necrosis by cleaving the pyroptosis effector gasdermin D (GSDMD), causing its pore-forming amino-terminal domain to oligomerize and perforate the plasma membrane. However, the subcellular events that precede pyroptotic cell lysis are ill defined. In this study, we triggered primary macrophages to undergo pyroptosis from three inflammasome types and recorded their dynamics and morphology using high-resolution live-cell spinning disk confocal laser microscopy. Based on quantitative analysis of single-cell subcellular events, we propose a model of pyroptotic cell disintegration that is initiated by opening of GSDMD-dependent ion channels or pores that are more restrictive than recently proposed GSDMD pores, followed by osmotic cell swelling, commitment of mitochondria and other membrane-bound organelles prior to sudden rupture of the plasma membrane and full permeability to intracellular proteins. This study provides a dynamic framework for understanding cellular changes that occur during pyroptosis, and charts a chronological sequence of GSDMD-mediated subcellular events that define pyroptotic cell death at the single-cell level.

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

Science.gov (United States)

Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

2016-02-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

Triggering Mechanism for Neutron Induced Single-Event Burnout in Power Devices

Science.gov (United States)

Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori

2013-04-01

Cosmic ray neutrons can trigger catastrophic failures in power devices. It has been reported that parasitic transistor action causes single-event burnout (SEB) in power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). However, power diodes do not have an inherent parasitic transistor. In this paper, we describe the mechanism triggering SEB in power diodes for the first time using transient device simulation. Initially, generated electron-hole pairs created by incident recoil ions generate transient current, which increases the electron density in the vicinity of the n-/n+ boundary. The space charge effect of the carriers leads to an increase in the strength of the electric field at the n-/n+ boundary. Finally, the onset of impact ionization at the n-/n+ boundary can trigger SEB. Furthermore, this failure is closely related to diode secondary breakdown. It was clarified that the impact ionization at the n-/n+ boundary is a key point of the mechanism triggering SEB in power devices.

U/Th dating by SHRIMP RG ion-microprobe mass spectrometry using single ion-exchange beads

Science.gov (United States)

Bischoff, J.L.; Wooden, J.; Murphy, F.; Williams, Ross W.

2005-01-01

We present a new analytical method for U-series isotopes using the SHRIMP RG (Sensitive High mass Resolution Ion MicroProbe) mass spectrometer that utilizes the preconcentration of the U-series isotopes from a sample onto a single ion-exchange bead. Ion-microprobe mass spectrometry is capable of producing Th ionization efficiencies in excess of 2%. Analytical precision is typically better than alpha spectroscopy, but not as good as thermal ionization mass spectroscopy (TIMS) and inductively coupled plasma multicollector mass spectrometry (ICP-MS). Like TIMS and ICP-MS the method allows analysis of small samples sizes, but also adds the advantage of rapidity of analysis. A major advantage of ion-microprobe analysis is that U and Th isotopes are analyzed in the same bead, simplifying the process of chemical separation. Analytical time on the instrument is ???60 min per sample, and a single instrument-loading can accommodate 15-20 samples to be analyzed in a 24-h day. An additional advantage is that the method allows multiple reanalyses of the same bead and that samples can be archived for reanalysis at a later time. Because the ion beam excavates a pit only a few ??m deep, the mount can later be repolished and reanalyzed numerous times. The method described of preconcentrating a low concentration sample onto a small conductive substrate to allow ion-microprobe mass spectrometry is potentially applicable to many other systems. Copyright ?? 2005 Elsevier Ltd.

Modeling and simulation of single-event effect in CMOS circuit

International Nuclear Information System (INIS)

Yue Suge; Zhang Xiaolin; Zhao Yuanfu; Liu Lin; Wang Hanning

2015-01-01

This paper reviews the status of research in modeling and simulation of single-event effects (SEE) in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device (direct ionization and indirect ionization) are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices (bipolar transistor effect, charge sharing effect) and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients (SETs) in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed. (review)

Adult eyewitness memory for single versus repeated traumatic events

NARCIS (Netherlands)

Theunissen, T.P.M.; Meyer, T.; Memon, A.; Weinsheimer, C.C.

2017-01-01

Reports from individuals who have witnessed multiple, similar emotional events may differ from reports from witnesses of only a single event. To test this, we had participants (N = 65) view a video of a road traffic accident. Half of the participants saw two additional (similar) aversive films.

Single Event Upsets in the ATLAS IBL Front End ASICs

CERN Document Server

Rozanov, Alexandre; The ATLAS collaboration

2018-01-01

During operation at instantaneous luminosities of up to 2.1 1034 cm2 s−1 frontend chips of the ATLAS innermost pixel layer (IBL) experienced single event upsets affecting its global registers as well as the settings for the individual pixels, causing, amongst other things loss of occupancy, noisy pixels, and silent pixels. A quantitative analysis of the single event upsets as well as the operational issues and mitigation techniques are presented.

Network type sp3 boron-based single-ion conducting polymer electrolytes for lithium ion batteries

Science.gov (United States)

Deng, Kuirong; Wang, Shuanjin; Ren, Shan; Han, Dongmei; Xiao, Min; Meng, Yuezhong

2017-08-01

Electrolytes play a vital role in modulating lithium ion battery performance. An outstanding electrolyte should possess both high ionic conductivity and unity lithium ion transference number. Here, we present a facile method to fabricate a network type sp3 boron-based single-ion conducting polymer electrolyte (SIPE) with high ionic conductivity and lithium ion transference number approaching unity. The SIPE was synthesized by coupling of lithium bis(allylmalonato)borate (LiBAMB) and pentaerythritol tetrakis(2-mercaptoacetate) (PETMP) via one-step photoinitiated in situ thiol-ene click reaction in plasticizers. Influence of kinds and content of plasticizers was investigated and the optimized electrolytes show both outstanding ionic conductivity (1.47 × 10-3 S cm-1 at 25 °C) and high lithium transference number of 0.89. This ionic conductivity is among the highest ionic conductivity exhibited by SIPEs reported to date. Its electrochemical stability window is up to 5.2 V. More importantly, Li/LiFePO4 cells with the prepared single-ion conducting electrolytes as the electrolyte as well as the separator display highly reversible capacity and excellent rate capacity under room temperature. It also demonstrates excellent long-term stability and reliability as it maintains capacity of 124 mA h g-1 at 1 C rate even after 500 cycles without obvious decay.

Near bed suspended sediment flux by single turbulent events

Science.gov (United States)

Amirshahi, Seyed Mohammad; Kwoll, Eva; Winter, Christian

2018-01-01

The role of small scale single turbulent events in the vertical mixing of near bed suspended sediments was explored in a shallow shelf sea environment. High frequency velocity and suspended sediment concentration (SSC; calibrated from the backscatter intensity) were collected using an Acoustic Doppler Velocimeter (ADV). Using quadrant analysis, the despiked velocity time series was divided into turbulent events and small background fluctuations. Reynolds stress and Turbulent Kinetic Energy (TKE) calculated from all velocity samples, were compared to the same turbulent statistics calculated only from velocity samples classified as turbulent events (Reevents and TKEevents). The comparison showed that Reevents and TKEevents was increased 3 and 1.6 times, respectively, when small background fluctuations were removed and that the correlation with SSC for TKE could be improved through removal of the latter. The correlation between instantaneous vertical turbulent flux (w ‧) and SSC fluctuations (SSC ‧) exhibits a tidal pattern with the maximum correlation at peak ebb and flood currents, when strong turbulent events appear. Individual turbulent events were characterized by type, strength, duration and length. Cumulative vertical turbulent sediment fluxes and average SSC associated with individual turbulent events were calculated. Over the tidal cycle, ejections and sweeps were the most dominant events, transporting 50% and 36% of the cumulative vertical turbulent event sediment flux, respectively. Although the contribution of outward interactions to the vertical turbulent event sediment flux was low (11%), single outward interaction events were capable of inducing similar SSC ‧ as sweep events. The results suggest that on time scales of tens of minutes to hours, TKE may be appropriate to quantify turbulence in sediment transport studies, but that event characteristics, particular the upward turbulent flux need to be accounted for when considering sediment transport

Single Event Upsets in the ATLAS IBL Front End ASICs

CERN Document Server

Rozanov, Alexander; The ATLAS collaboration

2018-01-01

During operation at instantaneous luminosities of up to 2.1 10^{34} cm^{-2} s^{-1} the front end chips of the ATLAS innermost pixel layer (IBL) experienced single event upsets affecting its global registers as well as the settings for the individual pixels, causing, among other things loss of occupancy, noisy pixels, and silent pixels. A quantitative analysis of the single event upsets as well as the operational issues and mitigation techniques will be presented.

Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator

Science.gov (United States)

Aguiar, V. A. P.; Added, N.; Medina, N. H.; Macchione, E. L. A.; Tabacniks, M. H.; Aguirre, F. R.; Silveira, M. A. G.; Santos, R. B. B.; Seixas, L. E.

2014-08-01

In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic scattering collisions to achieve a low-flux with a high-uniformity ion beam to irradiate several devices. 12C, 16O, 28Si, 35Cl and 63Cu beams were used to test the experimental setup. In this system it is possible to use efficiently LET values of 17 MeV/mg/cm2 for an external beam arrangement and up to 32 MeV/mg/cm2 for in-vacuum irradiation.

Single-Event Transgene Product Levels Predict Levels in Genetically Modified Breeding Stacks.

Science.gov (United States)

Gampala, Satyalinga Srinivas; Fast, Brandon J; Richey, Kimberly A; Gao, Zhifang; Hill, Ryan; Wulfkuhle, Bryant; Shan, Guomin; Bradfisch, Greg A; Herman, Rod A

2017-09-13

The concentration of transgene products (proteins and double-stranded RNA) in genetically modified (GM) crop tissues is measured to support food, feed, and environmental risk assessments. Measurement of transgene product concentrations in breeding stacks of previously assessed and approved GM events is required by many regulatory authorities to evaluate unexpected transgene interactions that might affect expression. Research was conducted to determine how well concentrations of transgene products in single GM events predict levels in breeding stacks composed of these events. The concentrations of transgene products were compared between GM maize, soybean, and cotton breeding stacks (MON-87427 × MON-89034 × DAS-Ø15Ø7-1 × MON-87411 × DAS-59122-7 × DAS-40278-9 corn, DAS-81419-2 × DAS-44406-6 soybean, and DAS-21023-5 × DAS-24236-5 × SYN-IR102-7 × MON-88913-8 × DAS-81910-7 cotton) and their component single events (MON-87427, MON-89034, DAS-Ø15Ø7-1, MON-87411, DAS-59122-7, and DAS-40278-9 corn, DAS-81419-2, and DAS-44406-6 soybean, and DAS-21023-5, DAS-24236-5, SYN-IR102-7, MON-88913-8, and DAS-81910-7 cotton). Comparisons were made within a crop and transgene product across plant tissue types and were also made across transgene products in each breeding stack for grain/seed. Scatter plots were generated comparing expression in the stacks to their component events, and the percent of variability accounted for by the line of identity (y = x) was calculated (coefficient of identity, I 2 ). Results support transgene concentrations in single events predicting similar concentrations in breeding stacks containing the single events. Therefore, food, feed, and environmental risk assessments based on concentrations of transgene products in single GM events are generally applicable to breeding stacks composed of these events.

Cavity QED with single trapped Ca+-ions

International Nuclear Information System (INIS)

Mundt, A.B.

2003-02-01

This thesis reports on the design and setup of a vacuum apparatus allowing the investigation of cavity QED effects with single trapped 40 Ca + ions. The weak coupling of ion and cavity in the 'bad cavity limit' may serve to inter--convert stationary and flying qubits. The ion is confined in a miniaturized Paul trap and cooled via the Doppler effect to the Lamb--Dicke regime. The extent of the atomic wave function is less than 30 nm. The ion is enclosed by a high finesse optical cavity. The technically--involved apparatus allows movement of the trap relative to the cavity and the trapped ion can be placed at any position in the standing wave. By means of a transfer lock the cavity can be resonantly stabilized with the S 1/2 ↔ D 5/2 quadrupole transition at 729 nm (suitable as a qubit) without light at that wavelength being present in the cavity. The coupling of the cavity field to the S 1/2 ↔ D 5/2 quadrupole transition is investigated with various techniques in order to determine the spatial dependence as well as the temporal dynamics. The orthogonal coupling of carrier and first--order sideband transitions at field nodes and antinodes is explored. The coherent interaction of the ion and the cavity field is confirmed by exciting Rabi oscillations with short resonant pulses injected into the cavity. Finally, first experimental steps towards the observation of cavity enhanced spontaneous emission have been taken. (author)

Nuclear data relevant to single-event upsets (SEU) in microelectronics and their application to SEU simulation

International Nuclear Information System (INIS)

Watanabe, Yukinobu; Tukamoto, Yasuyuki; Kodama, Akihiro; Nakashima, Hideki

2004-01-01

A cross-section database for neutron-induced reactions on 28 Si was developed in the energy range between 2 MeV and 3 GeV in order to analyze single-event upsets (SEUs) phenomena induced by cosmic-ray neutrons in microelectronic devices. A simplified spherical device model was proposed for simulation of the initial process of SEUs. The model was applied to SEU cross-section calculations for semiconductor memory devices. The calculated results were compared with measured SEU cross-sections and the other simulation result. The dependence of SEU cross-sections on incident neutron energy and secondary ions having the most important effects on SEUs are discussed. (author)

Extending the applicability of an open-ring trap to perform experiments with a single laser-cooled ion

Energy Technology Data Exchange (ETDEWEB)

Cornejo, J. M.; Colombano, M.; Doménech, J.; Rodríguez, D., E-mail: danielrodriguez@ugr.es [Departamento de Física Atómica, Molecular y Nuclear, Universidad de Granada, 18071 Granada (Spain); Block, M. [GSI Helmholtzzentrum für Schwerionenforschung GmbH, 64291 Darmstadt (Germany); Helmholtz-Institut Mainz, 55099 Mainz (Germany); Institut für Kernchemie, University of Mainz, 55099 Mainz (Germany); Delahaye, P. [Grand Accélérateur National d’Ions Lourds, 14000 Caen (France)

2015-10-15

A special ion trap was initially built up to perform β-ν correlation experiments with radioactive ions. The trap geometry is also well suited to perform experiments with laser-cooled ions, serving for the development of a new type of Penning trap, in the framework of the project TRAPSENSOR at the University of Granada. The goal of this project is to use a single {sup 40}Ca{sup +} ion as detector for single-ion mass spectrometry. Within this project and without any modification to the initial electrode configuration, it was possible to perform Doppler cooling on {sup 40}Ca{sup +} ions, starting from large clouds and reaching single ion sensitivity. This new feature of the trap might be important also for other experiments with ions produced at radioactive ion beam facilities. In this publication, the trap and the laser system will be described, together with their performance with respect to laser cooling applied to large ion clouds down to a single ion.

Energetic atomic and molecular ions of ionospheric origin observed in distant magnetotail flow-reversal events

Science.gov (United States)

Christon, S. P.; Gloeckler, G.; Williams, D. J.; Mukai, T.; Mcentire, R. W.; Jacquey, C.; Angelopoulos, V.; Lui, A. T. Y.; Kokubun, S.; Fairfield, D. H.

1994-01-01

Energetic atomic (O(+1) and N(+1)) and molecular (O2(+1), NO(+1), and N2(+1)) ions of ionospheric origin were observed in Earth's magnetotail at X approximately -146 R(sub E) during two plasma sheet sunward/tailward flow-reversal events measured by instruments on the GEOTAIL spacecraft. These events were associated with concurrent ground-measured geomagnetic disturbance intensification at auroral-and mid-latitudes (Kp = 7(-)). Energetic ions in the sunward-component and tailward flows were from both the solar wind and ionosphere. Plasma and energetic ions participated in the flows. During tailward flow, ionospheric origin ion abundance ratios at approximately 200-900 km/s in the rest frame were N(+1)/O(+1) = approximately 25-30% and ((O2(+1), NO(+1), and N2(+1))/O(+1) = approximately 1-2%. We argue that tailward flow most likely initiated approximately 80-100 R(sub E) tailward of Earth and molecular ions were in the plasma sheet prior to geomagnetic intensification onset.

On the single-ion Magnetic Anisotropy of the Rare-Earth Metals

DEFF Research Database (Denmark)

Kolmakova, N.P.; Tishin, A.M.; Bohr, Jakob

1996-01-01

The temperature dependences of the single-ion magnetic anisotropy constants for Tb and Dy metals are calculated in terms of the multipole moments of the rare-earth ions utilizing the available crystal-field parameters. The results are compared with the existing experimental data....

Raman spectroscopy and single-photon source in an ion-cavity system

International Nuclear Information System (INIS)

Goncalves de Barros, H.

2010-01-01

The work presented in this thesis explores the interaction between a single trapped 40Ca+ ion and the electromagnetic field inside a high-finesse optical cavity. The coupling takes place via the use of a vacuum stimulated Raman transition, which transfers atomic population from the S1/2 to the D3/2 manifolds of the calcium ion producing a photon in the cavity. This photon is measured and properties of the system are evaluated. Spectroscopy measurements of the Raman transitions are performed and all possible transitions are identified for different polarizations of both drive laser and cavity fields. The system is also used to deterministically produce single photons. Simulation curves quantitatively match the experimental results within calibration error bars. The single-photon creation efficiency obtained in this work overcomes previous ion-cavity setups and is comparable to state-of-the-art systems composed of a neutral atom and a cavity operating in the strong coupling regime. (author)

Creation and recovery of a W(111) single atom gas field ion source

International Nuclear Information System (INIS)

Pitters, Jason L.; Urban, Radovan; Wolkow, Robert A.

2012-01-01

Tungsten single atom tips have been prepared from a single crystal W(111) oriented wire using the chemical assisted field evaporation and etching method. Etching to a single atom tip occurs through a symmetric structure and leads to a predictable last atom unlike etching with polycrystalline tips. The single atom tip formation procedure is shown in an atom by atom removal process. Rebuilds of single atom tips occur on the same crystalline axis as the original tip such that ion emission emanates along a fixed direction for all tip rebuilds. This preparation method could be utilized and developed to prepare single atom tips for ion source development.

Improved generation of single nitrogen-vacancy centers in diamond by ion implantation

Energy Technology Data Exchange (ETDEWEB)

Naydenov, Boris; Beck, Johannes; Steiner, Matthias; Balasubramanian, Gopalakrishnan; Jelezko, Fedor; Wrachtrup, Joerg [3. Institute of Physics, University of Stuttgart (Germany); Richter, Vladimir; Kalish, Rafi [Solid State Institute, Technion City, Haifa (Israel); Achard, Jocelyn [Laboratoire d' Ingenieurie des Materiaux et des Hautes Pressions, CNRS, Villetaneuse (France)

2010-07-01

Nitrogen-vacancy (NV) centers in diamond have recently attracted the attention of many research groups due to their possible application as quantum bits (qubits), ultra low magnetic field sensors and single photon sources. These color centers can be produced by nitrogen ion implantation, although the yield is usually below 5 % at low ion energies. Here we report an increase of the NV production efficiency by subsequently implanting carbon ions in the area of implanted nitrogen ions. This method improves the production yield by more than 50 %. We also show that very low nitrogen concentration (below 0.1 ppb) in diamond can be determined by converting the intrinsic nitrogen atoms to single NV centers and detecting the latter using a confocal microscope.

Variations in tritium levels during single storm events

International Nuclear Information System (INIS)

Smith, L.W.

1979-06-01

Precipitation samples have been taken over a period of one calendar year to determine the variables in environmental tritium during single storm events. Where possible, comment is made on the hydrological implications of these variations

Magnetospheric Multiscale (MMS) Observations of Energetic Ion Response to Magnetotail Dipolarization Events

Science.gov (United States)

Cohen, I. J.; Mauk, B.; Anderson, B. J.; Sitnov, M. I.; Motoba, T.; Ohtani, S.; Gkioulidou, M.; Fuselier, S. A.; Giles, B. L.; Strangeway, R. J.; Torbert, R. B.; Burch, J. L.

2017-12-01

Observations from the Energetic Ion Spectrometer (EIS) instruments aboard MMS have shown angular (pitch, elevation, azimuthal) asymmetries of energetic (>10s of keV) ions corresponding to dipolarization events in the near-Earth and distant magnetotail. In particular, EIS distinguishes the species composition of these ions (protons, helium, oxygen) and reveals apparent species-based differences in their response. This study presents analysis of the dynamic injection and mass-dependent response of energetic ions that likely result from the kinetic response of the ions to the time-varying electric and magnetic fields associated with injection process. Analysis is focused on discriminating between truly kinetic responses to the dynamics and the features that arise from large gyro-radii particles in the vicinity of strong spatial gradients. The study will focus on EIS measurements and include supplementary data from the FIELDS, FPI, and HPCA instruments.

Single-ion quantum lock-in amplifier.

Science.gov (United States)

Kotler, Shlomi; Akerman, Nitzan; Glickman, Yinnon; Keselman, Anna; Ozeri, Roee

2011-05-05

Quantum metrology uses tools from quantum information science to improve measurement signal-to-noise ratios. The challenge is to increase sensitivity while reducing susceptibility to noise, tasks that are often in conflict. Lock-in measurement is a detection scheme designed to overcome this difficulty by spectrally separating signal from noise. Here we report on the implementation of a quantum analogue to the classical lock-in amplifier. All the lock-in operations--modulation, detection and mixing--are performed through the application of non-commuting quantum operators to the electronic spin state of a single, trapped Sr(+) ion. We significantly increase its sensitivity to external fields while extending phase coherence by three orders of magnitude, to more than one second. Using this technique, we measure frequency shifts with a sensitivity of 0.42 Hz Hz(-1/2) (corresponding to a magnetic field measurement sensitivity of 15 pT Hz(-1/2)), obtaining an uncertainty of less than 10 mHz (350 fT) after 3,720 seconds of averaging. These sensitivities are limited by quantum projection noise and improve on other single-spin probe technologies by two orders of magnitude. Our reported sensitivity is sufficient for the measurement of parity non-conservation, as well as the detection of the magnetic field of a single electronic spin one micrometre from an ion detector with nanometre resolution. As a first application, we perform light shift spectroscopy of a narrow optical quadrupole transition. Finally, we emphasize that the quantum lock-in technique is generic and can potentially enhance the sensitivity of any quantum sensor. ©2011 Macmillan Publishers Limited. All rights reserved

Sputtering of Au induced by single Xe ion impacts

International Nuclear Information System (INIS)

Birtcher, R. C.; Donnelly, S. E.

1999-01-01

Sputtering of Au thin films has been determined for Xe ions with energies between 50 and 600 keV. In-situ transmission electron microscopy was used to observe sputtered Au during deposition on a carbon foil near the specimen. Total reflection and transmission sputtering yields for a 62 nm thick Au thin film were determined by ex-situ measurement of the total amount of Au on the carbon foils. In situ observations show that individual Xe ions eject Au nanoparticles as large as 7 nm in diameter with an average diameter of approximately 3 nm. Particle emission correlates with crater formation due to single ion impacts. Nanoparticle emission contributes significantly to the total sputtering yield for Xe ions in this energy range in either reflection or transmission geometry

Plastic Flow Induced by Single Ion Impacts on Gold

International Nuclear Information System (INIS)

Birtcher, R.C.; Donnelly, S.E.

1996-01-01

The formation of holes in thin gold foils as a result of single ion impacts by 200keV Xe ions has been followed using transmission electron microscopy. Video recording provided details of microstructure evolution with a time resolution of 1/30th sec. Hole formation involves the movement by plastic flow of massive amounts of material, on the order of tens of thousands of Au atoms per ion impact. Plastic flow, as a consequence of individual ion impacts, results in a continual filling of both holes and craters as well as a thickening of the gold foil. Changes in morphology during irradiation is attributed to a localized, thermal-spike induced melting, coupled with plastic flow of effected material under the influence of surface forces. copyright 1996 The American Physical Society

Long-Distance Single Photon Transmission from a Trapped Ion via Quantum Frequency Conversion

Science.gov (United States)

Walker, Thomas; Miyanishi, Koichiro; Ikuta, Rikizo; Takahashi, Hiroki; Vartabi Kashanian, Samir; Tsujimoto, Yoshiaki; Hayasaka, Kazuhiro; Yamamoto, Takashi; Imoto, Nobuyuki; Keller, Matthias

2018-05-01

Trapped atomic ions are ideal single photon emitters with long-lived internal states which can be entangled with emitted photons. Coupling the ion to an optical cavity enables the efficient emission of single photons into a single spatial mode and grants control over their temporal shape. These features are key for quantum information processing and quantum communication. However, the photons emitted by these systems are unsuitable for long-distance transmission due to their wavelengths. Here we report the transmission of single photons from a single 40Ca+ ion coupled to an optical cavity over a 10 km optical fiber via frequency conversion from 866 nm to the telecom C band at 1530 nm. We observe nonclassical photon statistics of the direct cavity emission, the converted photons, and the 10 km transmitted photons, as well as the preservation of the photons' temporal shape throughout. This telecommunication-ready system can be a key component for long-distance quantum communication as well as future cloud quantum computation.

Single event effect testing of the Intel 80386 family and the 80486 microprocessor

International Nuclear Information System (INIS)

Moran, A.; LaBel, K.; Gates, M.; Seidleck, C.; McGraw, R.; Broida, M.; Firer, J.; Sprehn, S.

1996-01-01

The authors present single event effect test results for the Intel 80386 microprocessor, the 80387 coprocessor, the 82380 peripheral device, and on the 80486 microprocessor. Both single event upset and latchup conditions were monitored

Negative ions in the auroral mesosphere during a PCA event around sunset

Directory of Open Access Journals (Sweden)

C. F. del Pozo

Full Text Available This is a study of the negative ion chemistry in the mesosphere above Tromsø using a number of EISCAT observations of high energy proton precipitation events during the last solar maximum, and in particular around sunset on 23 October, 1989. In these conditions it is possible to look at the relative importance of the various photodetachment and photodissociation processes controlling the concentration of negative ions. The data analysed are from several UHF GEN11 determinations of the ion-plasma ACF together with the pseudo zero-lag estimate of the `raw' electron density, at heights between 55 km and 85 km, at less than 1 km resolution. The power profiles from the UHF are combined with the 55-ion Sodankylä model to obtain consistent estimates of the electron density, the negative ion concentrations, and the average ion mass with height. The neutral concentrations and ion temperature are given by the MSIS90 model. These parameters are then used to compare the calculated widths of the ion-line with the GEN11 determinations. The ion-line spectrum gives information on the effects of negative ions below 70 km where they are dominant; the spectral width is almost a direct measure of the relative abundance of negative ions.

Key words. Ionosphere (auroral ionosphere; ion chemistry and composition; particle precipitation.

Single-event effects in analog and mixed-signal integrated circuits

International Nuclear Information System (INIS)

Turflinger, T.L.

1996-01-01

Analog and mixed-signal integrated circuits are also susceptible to single-event effects, but they have rarely been tested. Analog circuit single-particle transients require modified test techniques and data analysis. Existing work is reviewed and future concerns are outlined

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, S.; Sugimoto, K.; Shugyo, S.; Matsuda, S. [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan); Hirao, T. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

1998-12-01

Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

Single event upset studies on the CMS tracker APV25 readout chip

International Nuclear Information System (INIS)

Noah, E.; Bauer, T.; Bisello, D.; Faccio, F.; Friedl, M.; Fulcher, J.R.; Hall, G.; Huhtinen, M.; Kaminsky, A.; Pernicka, M.; Raymond, M.; Wyss, J.

2002-01-01

The microstrip tracker for the CMS experiment at the CERN Large Hadron Collider will be read out using APV25 chips. During high luminosity running the tracker will be exposed to particle fluxes up to 10 7 cm -2 s -1 , which raises concerns that the APV25 could occasionally suffer Single Event Upsets (SEUs). The effect of SEU on the APV25 has been studied to investigate implications for CMS detector operation and from the viewpoint of detailed circuit operation, to improve the understanding of its origin and what factors affect its magnitude. Simulations were performed to reconstruct the effects created by highly ionising particles striking sensitive parts of the circuits, along with consideration of the underlying mechanisms of charge deposition, collection and the consequences. A model to predict the behaviour of the memory circuits in the APV25 has been developed and data collected from dedicated experiments using both heavy ions and hadrons have been shown to support it

Effects of ion beam irradiation on semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Nashiyama, Isamu; Hirao, Toshio; Itoh, Hisayoshi; Ohshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods such as a scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. (author)

Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator

Energy Technology Data Exchange (ETDEWEB)

Aguiar, V.A.P. [Instituto de Física da Universidade de São Paulo, São Paulo, SP (Brazil); Added, N., E-mail: nemitala@if.usp.br [Instituto de Física da Universidade de São Paulo, São Paulo, SP (Brazil); Medina, N.H.; Macchione, E.L.A.; Tabacniks, M.H.; Aguirre, F.R. [Instituto de Física da Universidade de São Paulo, São Paulo, SP (Brazil); Silveira, M.A.G.; Santos, R.B.B. [Centro Universitário da FEI, São Bernardo do Campo, SP (Brazil); Seixas, L.E. [Centro de Tecnologia da Informação Renato Archer, Campinas, SP (Brazil)

2014-08-01

In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic scattering collisions to achieve a low-flux with a high-uniformity ion beam to irradiate several devices. {sup 12}C, {sup 16}O, {sup 28}Si, {sup 35}Cl and {sup 63}Cu beams were used to test the experimental setup. In this system it is possible to use efficiently LET values of 17 MeV/mg/cm{sup 2} for an external beam arrangement and up to 32 MeV/mg/cm{sup 2} for in-vacuum irradiation.

3D Thermal and Mechanical Analysis of a Single Event Burnout

Science.gov (United States)

Peretti, Gabriela; Demarco, Gustavo; Romero, Eduardo; Tais, Carlos

2015-08-01

This paper presents a study related to thermal and mechanical behavior of power DMOS transistors during a Single Event Burnout (SEB) process. We use a cylindrical heat generation region for emulating the thermal and mechanical phenomena related to the SEB. In this way, it is avoided the complexity of the mathematical treatment of the ion-device interaction. This work considers locating the heat generation region in positions that are more realistic than the ones used in previous work. For performing the study, we formulate and validate a new 3D model for the transistor that maintains the computational cost at reasonable level. The resulting mathematical models are solved by means of the Finite Element Method. The simulations results show that the failure dynamics is dominated by the mechanical stress in the metal layer. Additionally, the time to failure depends on the heat source position, for a given power and dimension of the generation region. The results suggest that 3D modeling should be considered for a detailed study of thermal and mechanical effects induced by SEBs.

Single event effect hardness for the front-end ASICs in the DAMPE satellite BGO calorimeter

Science.gov (United States)

Gao, Shan-Shan; Jiang, Di; Feng, Chang-Qing; Xi, Kai; Liu, Shu-Bin; An, Qi

2016-01-01

The Dark Matter Particle Explorer (DAMPE) is a Chinese scientific satellite designed for cosmic ray studies with a primary scientific goal of indirect detection of dark matter particles. As a crucial sub-detector, the BGO calorimeter measures the energy spectrum of cosmic rays in the energy range from 5 GeV to 10 TeV. In order to implement high-density front-end electronics (FEE) with the ability to measure 1848 signals from 616 photomultiplier tubes on the strictly constrained satellite platform, two kinds of 32-channel front-end ASICs, VA160 and VATA160, are customized. However, a space mission period of more than 3 years makes single event effects (SEEs) become threats to reliability. In order to evaluate SEE sensitivities of these chips and verify the effectiveness of mitigation methods, a series of laser-induced and heavy ion-induced SEE tests were performed. Benefiting from the single event latch-up (SEL) protection circuit for power supply, the triple module redundancy (TMR) technology for the configuration registers and the optimized sequential design for the data acquisition process, 52 VA160 chips and 32 VATA160 chips have been applied in the flight model of the BGO calorimeter with radiation hardness assurance. Supported by Strategic Priority Research Program on Space Science of the Chinese Academy of Sciences (XDA04040202-4) and Fundamental Research Funds for the Central Universities (WK2030040048)

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

International Nuclear Information System (INIS)

Massengill, L.W.

1996-01-01

A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAM's) is presented. The sources of single-event (SE) radiation particles, causes of circuit information loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, Satoshi; Sugimoto, Kenji; Matsuda, Sumio [National Space Development Agency of Japan, Ysukuba, Ibaraki (Japan); Hirao, Toshio

1998-10-01

Single-event burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs including small signal transistors with thinner epitaxial layer were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified. (author)

Applications Of Monte Carlo Radiation Transport Simulation Techniques For Predicting Single Event Effects In Microelectronics

International Nuclear Information System (INIS)

Warren, Kevin; Reed, Robert; Weller, Robert; Mendenhall, Marcus; Sierawski, Brian; Schrimpf, Ronald

2011-01-01

MRED (Monte Carlo Radiative Energy Deposition) is Vanderbilt University's Geant4 application for simulating radiation events in semiconductors. Geant4 is comprised of the best available computational physics models for the transport of radiation through matter. In addition to basic radiation transport physics contained in the Geant4 core, MRED has the capability to track energy loss in tetrahedral geometric objects, includes a cross section biasing and track weighting technique for variance reduction, and additional features relevant to semiconductor device applications. The crucial element of predicting Single Event Upset (SEU) parameters using radiation transport software is the creation of a dosimetry model that accurately approximates the net collected charge at transistor contacts as a function of deposited energy. The dosimetry technique described here is the multiple sensitive volume (MSV) model. It is shown to be a reasonable approximation of the charge collection process and its parameters can be calibrated to experimental measurements of SEU cross sections. The MSV model, within the framework of MRED, is examined for heavy ion and high-energy proton SEU measurements of a static random access memory.

Single-ion polymer electrolyte membranes enable lithium-ion batteries with a broad operating temperature range.

Science.gov (United States)

Cai, Weiwei; Zhang, Yunfeng; Li, Jing; Sun, Yubao; Cheng, Hansong

2014-04-01

Conductive processes involving lithium ions are analyzed in detail from a mechanistic perspective, and demonstrate that single ion polymeric electrolyte (SIPE) membranes can be used in lithium-ion batteries with a wide operating temperature range (25-80 °C) through systematic optimization of electrodes and electrode/electrolyte interfaces, in sharp contrast to other batteries equipped with SIPE membranes that display appreciable operability only at elevated temperatures (>60 °C). The performance is comparable to that of batteries using liquid electrolyte of inorganic salt, and the batteries exhibit excellent cycle life and rate performance. This significant widening of battery operation temperatures coupled with the inherent flexibility and robustness of the SIPE membranes makes it possible to develop thin and flexible Li-ion batteries for a broad range of applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

Science.gov (United States)

Lauenstein, Jean-Marie

2011-01-01

Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR

ISEE/IMP Observations of simultaneous upstream ion events

International Nuclear Information System (INIS)

Mitchel, D.G.; Roelof, E.C.; Sanderson, T.R.; Reinhard, R.; Wenzel, K.

1983-01-01

Propagation of upstream energetic (50--200 keV) ions is analyzed in sixteen events observed simulataneously by solid state detectors on ISEE 3 at approx.200 R/sub E/ and on IMP 8 at approx.35 R/sub E/ from the earth. Conclusions are based on comparisons of the pitch angle distributions observed at the two spacecraft and transformed into the solar wind frame. They are beamlike at ISEE 3 and are confined to the outward hemisphere. When IMP 8 is furtherest from the bow shock, they are also usually beamlike, or hemispheric. However, when IMP 8 is closer to the bow shock, pancakelike distributions are observed. This systematic variation in the IMP 8 pitch angle distributions delimits a scattering region l< or approx. =14 R/sub E/ upstream of the earth's bow shock (l measured along the interplanetary magnetic field) that dominates ion propagation, influences the global distribution of fluxes in the foreshock, and may play a role in acceleration of the ions. When IMP 8 is beyond lapprox.15 R/sub E/, the propagation appears to be essentially scatter-free between IMP 8 and ISEE 3; this is deduced from the absence of earthward fluxes at IMP 8 as well as the tendency for the spin-averaged fluxes to be comparable at the two spacecraft

Importance of ion energy on SEU in CMOS SRAMs

Energy Technology Data Exchange (ETDEWEB)

Dodd, P.E.; Shaneyfelt, M.R.; Sexton, F.W.; Hash, G.L.; Winokur, P.S. [Sandia National Labs., Albuquerque, NM (United States); Musseau, O.; Leray, J.L. [CEA-DAM, Bruyeres-le-Chatel (France)

1998-03-01

The single-event upset (SEU) responses of 16 Kbit to 1 Mbit SRAMs irradiated with low and high-energy heavy ions are reported. Standard low-energy heavy ion tests appear to be sufficiently conservative for technologies down to 0.5 {micro}m.

Localization Spectroscopy of a Single Ion in an Optical Lattice

DEFF Research Database (Denmark)

Legrand, Olivier Philippe Alexandre

2015-01-01

The work reported in this thesis primarily focuses on studies of the dynamics of a single laser-cooled ion, simultaneously confined in the harmonic potential of a linear Paul trap and a rapidly varying periodic potential – a so-called optical lattice – generated from an optical standing-wave. Bes...... as a new tool for future cavity quantum electrodynamics experiments in the Ion trap group at Aarhus University.......-wave. Besides providing a better understanding of the dynamics of an ion subjected to varying trapping conditions, this work establishes a basis for future studies of various quantum many-body physics models, for manipulations of the structure of large ion Coulomb crystals, and for optimization...... of the interaction between light and matter in connection with quantum information experiments. In addition to the deep, three-dimensional harmonic potential of the linear Paul trap which confines the ion in regions of several millimeters, one of the directions of the ion motion is constrained by the application...

The future of the SIRAD SEE facility Ion-Electron Emission Microscopy

CERN Document Server

Wyss, J; Kaminski, A; Magalini, A; Nigro, M; Pantano, D; Sedhykh, S

2002-01-01

The SIRAD facility is dedicated to radiation damage studies on semiconductor detectors, electronic devices and systems, using proton and ion beams delivered by a 15 MV tandem accelerator. It is routinely used by groups involved in detector development for elementary particle physics, electronic device physics and space applications. In particular, Single Event Effect studies are very important to the latter two activities. Presently, the facility can only characterize the global sensitivity of a device or system to single ion impacts. To map out the sensitivity of a device with micrometric resolution, following an idea developed at SANDIA, we will implement an Ion-Electron Emission Microscope (IEEM) to reconstruct the X,Y and time coordinates of an impacting energetic ion by imaging the secondary electrons emitted by the sample using a standard emission electron microscope and position sensitive detector system. After describing typical Single Event Effect activities at SIRAD we will discuss the basic princip...

Low-energy neutron-induced single-event upsets in static random access memory

International Nuclear Information System (INIS)

Guo Xiaoqiang; Guo Hongxia; Wang Guizhen; Ling Dongsheng; Chen Wei; Bai Xiaoyan; Yang Shanchao; Liu Yan

2009-01-01

The visual analysis method of data process was provided for neutron-induced single-event upset(SEU) in static random access memory(SRAM). The SEU effects of six CMOS SRAMs with different feature size(from 0.13 μm to 1.50 μm) were studied. The SEU experiments were performed using the neutron radiation environment at Xi'an pulsed reactor. And the dependence of low-energy neutron-induced SEU cross section on SRAM's feature size was given. The results indicate that the decreased critical charge is the dominant factor for the increase of single event effect sensitivity of SRAM devices with decreased feature size. Small-sized SRAM devices are more sensitive than large-sized ones to single event effect induced by low-energy neutrons. (authors)

Single event effects and total ionizing dose effects of typical VDMOSFET devices

International Nuclear Information System (INIS)

Lou Jianshe; Cai Nan; Liu Jiaxin; Wu Qinzhi; Wang Jia

2012-01-01

In this work, single event effects and total ionizing dose effects of typical VDMOSFET irradiated by 60 Co γ-rays and 252 Cf source were studied. The single event burnout and single event gate rupture (SEB/SEGR) effects were investigated, and the relationship between drain-source breakdown voltage and ionizing dose was obtained. The results showed that the VDMOSFET devices were sensitive to SEB and SEGR, and measures to improve their resistance to SEB and SEGR should be considered seriously for their space applications. The drain-source breakdown voltage was sensitive to total ionizing dose effects as the threshold voltage. In assessing the devices' resistance to the total ionizing dose effects, both the threshold voltage and the drain-source breakdown voltage should be taken into account. (authors)

Ferrimagnetic Properties of Bond Dilution Mixed Blume-Capel Model with Random Single-Ion Anisotropy

International Nuclear Information System (INIS)

Liu Lei; Yan Shilei

2005-01-01

We study the ferrimagnetic properties of spin 1/2 and spin-1 systems by means of the effective field theory. The system is considered in the framework of bond dilution mixed Blume-Capel model (BCM) with random single-ion anisotropy. The investigation of phase diagrams and magnetization curves indicates the existence of induced magnetic ordering and single or multi-compensation points. Special emphasis is placed on the influence of bond dilution and random single-ion anisotropy on normal or induced magnetic ordering states and single or multi-compensation points. Normal magnetic ordering states take on new phase diagrams with increasing randomness (bond and anisotropy), while anisotropy induced magnetic ordering states are always occurrence no matter whether concentration of anisotropy is large or small. Existence and disappearance of compensation points rely strongly on bond dilution and random single-ion anisotropy. Some results have not been revealed in previous papers and predicted by Neel theory of ferrimagnetism.

Focused ion beam patterning to dielectrophoretically assemble single nanowire based devices

International Nuclear Information System (INIS)

La Ferrara, V; Massera, E; Francia, G Di; Alfano, B

2010-01-01

Direct-write processing is increasingly taking place in nanodevice fabrication. In this work, Focused Ion Beam (FIB), a powerful tool in maskless micromachining, is used for electrode patterning onto a silicon/silicon nitride substrate. Then a single palladium nanowire is assembled between electrodes by means of dielectrophoresis (DEP). The nanowire morphology depends on the electrode pattern when DEP conditions are fixed. FIB/DEP combination overcomes the problem of nanowire electrical contamination due to gallium ion bombardment and the as-grown nanowire retains its basic electrical properties. Single nanowire based devices have been fabricated with this novel approach and have been tested as hydrogen sensors, confirming the reliability of this technology.

Ion mass dependence for low energy channeling in single-wall nanotubes

International Nuclear Information System (INIS)

Zheng Liping; Zhu Zhiyuan; Li Yong; Zhu Dezhang; Xia Huihao

2008-01-01

An Monte Carlo (MC) simulation program has been used to study ion mass dependence for the low energy channeling of natural- and pseudo-Ar ions in single-wall nanotubes. The MC simulations show that the channeling critical angle Ψ C obeys the (E) -1/2 and the (M 1 ) -1/2 rules, where E is the incident energy and M 1 is the ion mass. The reason for this may be that the motion of the channeled (or de-channeled) ions should be correlated with both the incident energy E and the incident momentum (2M 1 E) 1/2 , in order to obey the conservation of energy and momentum

Multifragmentation of a very heavy nuclear system (I): selection of single-source events

Energy Technology Data Exchange (ETDEWEB)

Frankland, J.D.; Bacri, Ch.O.; Borderie, B. [Paris-11 Univ., Inst. de Physique Nucleaire, 91 - Orsay (France)] [and others

2000-07-01

A sample of 'single-source' events, compatible with the multifragmentation of very heavy fused systems, are isolated among well-measured {sup 155}Gd + {sup nat}U 36 A.MeV reactions by examining the evolution of the kinematics of fragments with Z {>=} 5 as a function of the dissipated energy and loss of memory of the entrance channel. Single-source events are found to be the result of very central collisions. Such central collisions may also lead to multiple fragment emission due to the decay of excited projectile- and target-like nuclei and so-called 'neck' emission, and for this reason the isolation of single-source events is very difficult. Event-selection criteria based on centrality of collisions, or on the isotropy of the emitted fragments in each event, are found to be inefficient to separate the two mechanisms, unless they take into account the redistribution of fragments' kinetic energies into directions perpendicular to the beam axis. The selected events are good candidates to look for bulk effects in the multifragmentation process. (authors)

Multifragmentation of a very heavy nuclear system (I): selection of single-source events

International Nuclear Information System (INIS)

Frankland, J.D.; Bacri, Ch.O.; Borderie, B.; Rivet, M.F.; Squalli, M.; Auger, G.; Bellaize, N.; Bocage, F.; Bougault, R.; Brou, R.; Buchet, Ph.; Chbihi, A.; Colin, J.; Cussol, D.; Dayras, R.; Demeyer, A.; Dore, D.; Durand, D.; Galichet, E.; Genouin-Duhamel, E.; Gerlic, E.; Guinet, D.; Lautesse, Ph.; Laville, J.L.; Lecolley, J.F.; Legrain, R.; Le Neindre, N.; Lopez, O.; Louvel, M.; Maskay, A.M.; Nalpas, L.; Nguyen, A.D.; Parlog, M.; Peter, J.; Plagnol, E.; Rosato, E.; Saint-Laurent, F.; Salou, S.; Steckmeyer, J.C.; Stern, M.; Tabacaru, G.; Tamain, B.; Tirel, O.; Tassan-Got, L.; Vient, E.; Volant, C.; Wieleczko, J.P.

2001-01-01

A sample of 'single-source' events, compatible with the multifragmentation of very heavy fused systems, are isolated among well-measured 155 Gd+ nat U 36 A MeV reactions by examining the evolution of the kinematics of fragments with Z≥5 as a function of the dissipated energy and loss of memory of the entrance channel. Single-source events are found to be the result of very central collisions. Such central collisions may also lead to multiple fragment emission due to the decay of excited projectile- and target-like nuclei and so-called 'neck' emission, and for this reason the isolation of single-source events is very difficult. Event-selection criteria based on centrality of collisions, or on the isotropy of the emitted fragments in each event, are found to be inefficient to separate the two mechanisms, unless they take into account the redistribution of fragments' kinetic energies into directions perpendicular to the beam axis. The selected events are good candidates to look for bulk effects in the multifragmentation process

Surface structure modification of single crystal graphite after slow, highly charged ion irradiation

Science.gov (United States)

Alzaher, I.; Akcöltekin, S.; Ban-d'Etat, B.; Manil, B.; Dey, K. R.; Been, T.; Boduch, P.; Rothard, H.; Schleberger, M.; Lebius, H.

2018-04-01

Single crystal graphite was irradiated by slow, highly charged ions. The modification of the surface structure was studied by means of Low-Energy Electron Diffraction. The observed damage cross section increases with the potential energy, i.e. the charge state of the incident ion, at a constant kinetic energy. The potential energy is more efficient for the damage production than the kinetic energy by more than a factor of twenty. Comparison with earlier results hints to a strong link between early electron creation and later target atom rearrangement. With increasing ion fluence, the initially large-scale single crystal is first transformed into μ m-sized crystals, before complete amorphisation takes place.

Single event and TREE latchup mitigation for a star tracker sensor: An innovative approach to system level latchup mitigation

International Nuclear Information System (INIS)

Kimbrough, J.R.; Colella, N.J.; Davis, R.W.; Bruener, D.B.; Coakley, P.G.; Lutjens, S.W.; Mallon, C.E.

1994-08-01

Electronic packages designed for spacecraft should be fault-tolerant and operate without ground control intervention through extremes in the space radiation environment. If designed for military use, the electronics must survive and function in a nuclear radiation environment. This paper presents an innovative ''blink'' approach rather than the typical ''operate through'' approach to achieve system level latchup mitigation on a prototype star tracker camera. Included are circuit designs, flash x-ray test data, and heavy ion data demonstrating latchup mitigation protecting micro-electronics from current latchup and burnout due to Single Event Latchup (SEL) and Transient Radiation Effects on Electronics (TREE)

Study of single and binary ion plasma expansion into laboratory-generated plasma wakes

International Nuclear Information System (INIS)

Wright, K.H. Jr.

1988-02-01

Plasma expansion into the wake of a large rectangular plate immersed in a collisionless, supersonic plasma was investigated in laboratory experiments. The experimental conditions address both single ion and binary ion plasma flows for the case of a body whose size is large in comparison with the Debye length, when the potential difference between the body and the plasma is relatively small. A new plasma source was developed to generate equi-velocity, binary ion plasma flows, which allows access to new parameter space that have previously been unavailable for laboratory studies. Specifically, the new parameters are the ionic mass ratio and the ionic component density ratio. In a series of experiments, a krypton-neon plasma is employed where the ambient density ratio of neon to krypton is varied more than an order of magnitude. The expansion in both the single ion and binary ion plasma cases is limited to early times, i.e., a few ion plasma periods, by the combination of plasma density, plasma drift speed, and vacuum chamber size, which prevented detailed comparison with self-similar theory

Exchange interaction of strongly anisotropic tripodal erbium single-ion magnets with metallic surfaces

DEFF Research Database (Denmark)

Dreiser, Jan; Wäckerlin, Christian; Ali, Md. Ehesan

2014-01-01

We present a comprehensive study of Er(trensal) single-ion magnets deposited in ultrahigh vacuum onto metallic surfaces. X-ray photoelectron spectroscopy reveals that the molecular structure is preserved after sublimation, and that the molecules are physisorbed on Au(111) while they are chemisorbed...... on a Ni thin film on Cu(100) single-crystalline surfaces. X-ray magnetic circular dichroism (XMCD) measurements performed on Au(111) samples covered with molecular monolayers held at temperatures down to 4 K suggest that the easy axes of the strongly anisotropic molecules are randomly oriented...... pathways toward optical addressing of surface-deposited single-ion magnets....

Structure and dynamics of highly charged heavy ions studied with the electron beam ion trap in Tokyo

International Nuclear Information System (INIS)

Nakamura, Nobuyuki; Hu, Zhimin; Watanabe, Hirofumi; Li, Yueming; Kato, Daiji; Currell, Fred J.; Tong Xiaomin; Watanabe, Tsutomu; Ohtani, Shunsuke

2011-01-01

In this paper, we present the structure and the dynamics of highly charged heavy ions studied through dielectronic recombination (DR) observations performed with the Tokyo electron beam ion trap. By measuring the energy dependence of the ion abundance ratio in the trap at equilibrium, we have observed DR processes for open shell systems very clearly. Remarkable relativistic effects due to the generalized Breit interaction have been clearly shown in DR for highly charged heavy ions. We also present the first result for the coincidence measurement of two photons emitted from a single DR event.

Single event upset susceptibilities of latchup immune CMOS process programmable gate arrays

Science.gov (United States)

Koga, R.; Crain, W. R.; Crawford, K. B.; Hansel, S. J.; Lau, D. D.; Tsubota, T. K.

Single event upsets (SEU) and latchup susceptibilities of complementary metal oxide semiconductor programmable gate arrays (CMOS PPGA's) were measured at the Lawrence Berkeley Laboratory 88-in. cyclotron facility with Xe (603 MeV), Cu (290 MeV), and Ar (180 MeV) ion beams. The PPGA devices tested were those which may be used in space. Most of the SEU measurements were taken with a newly constructed tester called the Bus Access Storage and Comparison System (BASACS) operating via a Macintosh II computer. When BASACS finds that an output does not match a prerecorded pattern, the state of all outputs, position in the test cycle, and other necessary information is transmitted and stored in the Macintosh. The upset rate was kept between 1 and 3 per second. After a sufficient number of errors are stored, the test is stopped and the total fluence of particles and total errors are recorded. The device power supply current was closely monitored to check for occurrence of latchup. Results of the tests are presented, indicating that some of the PPGA's are good candidates for selected space applications.

Swift heavy ion irradiation of CaF2 - from grooves to hillocks in a single ion track

Science.gov (United States)

Gruber, Elisabeth; Salou, Pierre; Bergen, Lorenz; El Kharrazi, Mourad; Lattouf, Elie; Grygiel, Clara; Wang, Yuyu; Benyagoub, Abdenacer; Levavasseur, Delphine; Rangama, Jimmy; Lebius, Henning; Ban-d'Etat, Brigitte; Schleberger, Marika; Aumayr, Friedrich

2016-10-01

A novel form of ion-tracks, namely nanogrooves and hillocks, are observed on CaF2 after irradiation with xenon and lead ions of about 100 MeV kinetic energy. The irradiation is performed under grazing incidence (0.3°-3°) which forces the track to a region in close vicinity to the surface. Atomic force microscopy imaging of the impact sites with high spatial resolution reveals that the surface track consists in fact of three distinct parts: each swift heavy ion impacting on the CaF2 surface first opens a several 100 nm long groove bordered by a series of nanohillocks on both sides. The end of the groove is marked by a huge single hillock and the further penetration of the swift projectile into deeper layers of the target is accompanied by a single protrusion of several 100 nm in length slowly fading until the track vanishes. By comparing experimental data for various impact angles with results of a simulation, based on a three-dimensional version of the two-temperature-model (TTM), we are able to link the crater and hillock formation to sublimation and melting processes of CaF2 due to the local energy deposition by swift heavy ions.

Single Event Effects Test Facility Options at the Oak Ridge National Laboratory

Energy Technology Data Exchange (ETDEWEB)

Riemer, Bernie [ORNL; Gallmeier, Franz X [ORNL; Dominik, Laura J [ORNL

2015-01-01

Increasing use of microelectronics of ever diminishing feature size in avionics systems has led to a growing Single Event Effects (SEE) susceptibility arising from the highly ionizing interactions of cosmic rays and solar particles. Single event effects caused by atmospheric radiation have been recognized in recent years as a design issue for avionics equipment and systems. To ensure a system meets all its safety and reliability requirements, SEE induced upsets and potential system failures need to be considered, including testing of the components and systems in a neutron beam. Testing of integrated circuits (ICs) and systems for use in radiation environments requires the utilization of highly advanced laboratory facilities that can run evaluations on microcircuits for the effects of radiation. This paper provides a background of the atmospheric radiation phenomenon and the resulting single event effects, including single event upset (SEU) and latch up conditions. A study investigating requirements for future single event effect irradiation test facilities and developing options at the Spallation Neutron Source (SNS) is summarized. The relatively new SNS with its 1.0 GeV proton beam, typical operation of 5000 h per year, expertise in spallation neutron sources, user program infrastructure, and decades of useful life ahead is well suited for hosting a world-class SEE test facility in North America. Emphasis was put on testing of large avionics systems while still providing tunable high flux irradiation conditions for component tests. Makers of ground-based systems would also be served well by these facilities. Three options are described; the most capable, flexible, and highest-test-capacity option is a new stand-alone target station using about one kW of proton beam power on a gas-cooled tungsten target, with dual test enclosures. Less expensive options are also described.

Simulation of ion reflection from a single crystal at grazing angles

International Nuclear Information System (INIS)

Karpuzov, D.S.; Armour, D.G.; Evdoimov, I.N.

1979-01-01

Features of ion scattering for small angles of incidence, up to about 10 0 from the surface, have been examined for 6 keV Ar + ions in a plane of incidence parallel to the direction in the nickel (110) surface. Ions scattered between the surface layer atoms, either above the surface, or slightly below the surface in the semi-channel make a significant contribution to the reflected beam. The angular dependence of experimentally measured energy spectra can be explained when these scattering events are taken into account. In this region of small elastic energy loss and long path lengths close to the surface, inelastic energy losses assume an important role in determining the energy distribution of the scattered particles. (author)

Fluorescence-based high-throughput functional profiling of ligand-gated ion channels at the level of single cells.

Directory of Open Access Journals (Sweden)

Sahil Talwar

Full Text Available Ion channels are involved in many physiological processes and are attractive targets for therapeutic intervention. Their functional properties vary according to their subunit composition, which in turn varies in a developmental and tissue-specific manner and as a consequence of pathophysiological events. Understanding this diversity requires functional analysis of ion channel properties in large numbers of individual cells. Functional characterisation of ligand-gated channels involves quantitating agonist and drug dose-response relationships using electrophysiological or fluorescence-based techniques. Electrophysiology is limited by low throughput and high-throughput fluorescence-based functional evaluation generally does not enable the characterization of the functional properties of each individual cell. Here we describe a fluorescence-based assay that characterizes functional channel properties at single cell resolution in high throughput mode. It is based on progressive receptor activation and iterative fluorescence imaging and delivers >100 dose-responses in a single well of a 384-well plate, using α1-3 homomeric and αβ heteromeric glycine receptor (GlyR chloride channels as a model system. We applied this assay with transiently transfected HEK293 cells co-expressing halide-sensitive yellow fluorescent protein and different GlyR subunit combinations. Glycine EC50 values of different GlyR isoforms were highly correlated with published electrophysiological data and confirm previously reported pharmacological profiles for the GlyR inhibitors, picrotoxin, strychnine and lindane. We show that inter and intra well variability is low and that clustering of functional phenotypes permits identification of drugs with subunit-specific pharmacological profiles. As this method dramatically improves the efficiency with which ion channel populations can be characterized in the context of cellular heterogeneity, it should facilitate systems

Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects

Science.gov (United States)

Reed, R. A.; Weller, R. A.; Akkerman, A.; Barak, J.; Culpepper, W.; Duzellier, S.; Foster, C.; Gaillardin, M.; Hubert, G.; Jordan, T.; Jun, I.; Koontz, S.; Lei, F.; McNulty, P.; Mendenhall, M. H.; Murat, M.; Nieminen, P.; O'Neill, P.; Raine, M.; Reddell, B.; Saigné, F.; Santin, G.; Sihver, L.; Tang, H. H. K.; Truscott, P. R.; Wrobel, F.

2013-06-01

This anthology contains contributions from eleven different groups, each developing and/or applying Monte Carlo-based radiation transport tools to simulate a variety of effects that result from energy transferred to a semiconductor material by a single particle event. The topics span from basic mechanisms for single-particle induced failures to applied tasks like developing websites to predict on-orbit single event failure rates using Monte Carlo radiation transport tools.

Causal relationships between solar proton events and single event upsets for communication satellites

Science.gov (United States)

Lohmeyer, W. Q.; Cahoy, K.; Liu, Shiyang

In this work, we analyze a historical archive of single event upsets (SEUs) maintained by Inmarsat, one of the world's leading providers of global mobile satellite communications services. Inmarsat has operated its geostationary communication satellites and collected extensive satellite anomaly and telemetry data since 1990. Over the course of the past twenty years, the satellites have experienced more than 226 single event upsets (SEUs), a catch-all term for anomalies that occur in a satellite's electronics such as bit-flips, trips in power supplies, and memory changes in attitude control systems. While SEUs are seemingly random and difficult to predict, we correlate their occurrences to space weather phenomena, and specifically show correlations between SEUs and solar proton events (SPEs). SPEs are highly energetic protons that originate from solar coronal mass ejections (CMEs). It is thought that when these particles impact geostationary (GEO) satellites they can cause SEUs as well as solar array degradation. We calculate the associated statistical correlations that each SEU occurs within one day, one week, two weeks, and one month of 10 MeV SPEs between 10 - 10,000 particle flux units (pfu). However, we find that SPEs are most prevalent at solar maximum and that the SEUs on Inmarsat's satellites occur out of phase with the solar maximum. Ultimately, this suggests that SPEs are not the primary cause of the Inmarsat SEUs. A better understanding of the causal relationship between SPEs and SEUs will help the satellite communications industry develop component and operational space weather mitigation techniques as well as help the space weather community to refine radiation models.

Single-ion and single-chain magnetism in triangular spin-chain oxides

Science.gov (United States)

Seikh, Md. Motin; Caignaert, Vincent; Perez, Olivier; Raveau, Bernard; Hardy, Vincent

2017-05-01

S r4 -xC axM n2Co O9 oxides (x =0 and x =2 ) are found to exhibit magnetic responses typical of single-chain magnets (SCMs) and single-ion magnets (SIMs), two features generally investigated in coordination polymers or complexes. The compound x =0 appears to be a genuine SCM, in that blocking effects associated with slow spin dynamics yield remanence and coercivity in the absence of long-range ordering (LRO). In addition, SIM signatures of nearly identical nature are detected in both compounds, coexisting with SCM in x =0 and with LRO in x =2 . It is also observed that a SCM response can be recovered in x =2 after application of magnetic field. These results suggest that purely inorganic systems could play a valuable role in the topical issue of the interplay among SIM, SCM, and LRO phenomena in low-dimensional magnetism.

Investigation of photobleaching and saturation of single molecules by fluorophore recrossing events

Energy Technology Data Exchange (ETDEWEB)

Burrows, Sean M.; Reif, Randall D. [Department of Chemistry and Biochemistry, Texas Tech University, Lubbock, TX 79409-1061 (United States); Pappas, Dimitri [Department of Chemistry and Biochemistry, Texas Tech University, Lubbock, TX 79409-1061 (United States)], E-mail: d.pappas@ttu.edu

2007-08-15

A method for investigation of photobleaching and saturation of single molecules by fluorophore recrossing events in a laser beam is described. The diffraction-limited probe volumes encountered in single-molecule detection (SMD) produce high excitation irradiance, which can decrease available signal. The single molecules of several dyes were detected and the data was used to extract interpeak times above a defined threshold value. The interpeak times revealed the number of fluorophore recrossing events. The number of molecules detected that were within 2 ms of each other represented a molecular recrossing for this work. Calcein, fluorescein and R-phycoerythrin were analyzed and the saturation irradiance and photobleaching effects were determined as a function of irradiance. This approach is simple and it serves as a method of optimizing experimental conditions for single-molecule detection.

Conduction Mechanisms and Structure of Ionomeric Single-Ion Conductors

Energy Technology Data Exchange (ETDEWEB)

Colby, Ralph H. [Pennsylvania State Univ., University Park, PA (United States); Maranas, Janna K. [Pennsylvania State Univ., University Park, PA (United States); Mueller, Karl T. [Pennsylvania State Univ., University Park, PA (United States); Runt, James [Pennsylvania State Univ., University Park, PA (United States); Winey, Karen I. [Univ. of Pennsylvania, Philadelphia, PA (United States)

2015-03-01

Our team has designed using DFT (Gaussian) and synthesized low glass transition temperature single-ion conductors that are either polyanions that conduct small cations Li⁺, Na⁺, Cs⁺ or polycations that conduct small anions F^-, OH^-, Br^-. We utilize a wide range of complimentary experimental materials characterization tools to understand ion transport; differential scanning calorimetry, dielectric relaxation spectroscopy, infrared spectroscopy, nuclear magnetic resonance spectroscopy, linear viscoelasticity, X-ray scattering and molecular dynamics simulations. The glass transition temperature T_g needs to be as low as possible to facilitate ion transport, so the nonionic parts of the polymer need to be polar, flexible and have strong solvation interactions with the ions. The lowest T_g we have managed for polyanions conducting Li⁺ is -60 °C. In contrast, polysiloxanes with PEO side chains and tetrabutylphosphonium cationic side groups have T_g ≈ -75 °C that barely increases with ion content, as anticipated by DFT. A survey of all polyanions in the literature suggests that T_g < -80 °C is needed to achieve the 10^-4 S/cm conductivity needed for battery separators.

Non Invasive Instrumentation For Single Event Effects (NIISEE), Phase I

Data.gov (United States)

National Aeronautics and Space Administration — On this Phase 1 project, Adventium will identify and address key hurdles to achieve Radiation Hardening by Software (RHS) for Single Event Effects (SEEs) for modern...

Single event monitoring system based on Java 3D and XML data binding

International Nuclear Information System (INIS)

Wang Liang; Chinese Academy of Sciences, Beijing; Zhu Kejun; Zhao Jingwei

2007-01-01

Online single event monitoring is important to BESIII DAQ System. Java3D is extension of Java Language in 3D technology, XML data binding is more efficient to handle XML document than SAX and DOM. This paper mainly introduce the implementation of BESIII single event monitoring system with Java3D and XML data binding, and interface for track fitting software with JNI technology. (authors)

Coupled acoustic-gravity field for dynamic evaluation of ion exchange with a single resin bead.

Science.gov (United States)

Kanazaki, Takahiro; Hirawa, Shungo; Harada, Makoto; Okada, Tetsuo

2010-06-01

A coupled acoustic-gravity field is efficient for entrapping a particle at the position determined by its acoustic properties rather than its size. This field has been applied to the dynamic observation of ion-exchange reactions occurring in a single resin bead. The replacement of counterions in an ion-exchange resin induces changes in its acoustic properties, such as density and compressibility. Therefore, we can visually trace the advancement of an ion-exchange reaction as a time change in the levitation position of a resin bead entrapped in the field. Cation-exchange reactions occurring in resin beads with diameters of 40-120 microm are typically completed within 100-200 s. Ion-exchange equilibrium or kinetics is often evaluated with off-line chemical analyses, which require a batch amount of ion exchangers. Measurements with a single resin particle allow us to evaluate ion-exchange dynamics and kinetics of ions including those that are difficult to measure by usual off-line analyses. The diffusion properties of ions in resins have been successfully evaluated from the time change in the levitation positions of resin beads.

A study of single and binary ion plasma expansion into laboratory-generated plasma wakes

Science.gov (United States)

Wright, Kenneth Herbert, Jr.

1988-01-01

Plasma expansion into the wake of a large rectangular plate immersed in a collisionless, supersonic plasma was investigated in laboratory experiments. The experimental conditions address both single ion and binary ion plasma flows for the case of a body whose size is large in comparison with the Debye length, when the potential difference between the body and the plasma is relatively small. A new plasma source was developed to generate equi-velocity, binary ion plasma flows, which allows access to new parameter space that have previously been unavailable for laboratory studies. Specifically, the new parameters are the ionic mass ratio and the ionic component density ratio. In a series of experiments, a krypton-neon plasma is employed where the ambient density ratio of neon to krypton is varied more than an order of magnitude. The expansion in both the single ion and binary ion plasma cases is limited to early times, i.e., a few ion plasma periods, by the combination of plasma density, plasma drift speed, and vacuum chamber size, which prevented detailed comparison with self-similar theory.

Visualization of metallodrugs in single cells by secondary ion mass spectrometry imaging.

Science.gov (United States)

Wu, Kui; Jia, Feifei; Zheng, Wei; Luo, Qun; Zhao, Yao; Wang, Fuyi

2017-07-01

Secondary ion mass spectrometry, including nanoscale secondary ion mass spectrometry (NanoSIMS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS), has emerged as a powerful tool for biological imaging, especially for single cell imaging. SIMS imaging can provide information on subcellular distribution of endogenous and exogenous chemicals, including metallodrugs, from membrane through to cytoplasm and nucleus without labeling, and with high spatial resolution and chemical specificity. In this mini-review, we summarize recent progress in the field of SIMS imaging, particularly in the characterization of the subcellular distribution of metallodrugs. We anticipate that the SIMS imaging method will be widely applied to visualize subcellular distributions of drugs and drug candidates in single cells, exerting significant influence on early drug evaluation and metabolism in medicinal and pharmaceutical chemistry. Recent progress of SIMS applications in characterizing the subcellular distributions of metallodrugs was summarized.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Anthology of the development of radiation transport tools as applied to single event effects

International Nuclear Information System (INIS)

Akkerman, A.; Barak, J.; Murat, M.; Duzellier, S.; Hubert, G.; Gaillardin, M.; Raine, M.; Jordan, T.; Jun, I.; Koontz, S.; Reddell, B.; O'Neill, P.; Foster, C.; Culpepper, W.; Lei, F.; McNulty, P.; Nieminen, P.; Saigne, F.; Wrobel, F.; Santin, G.; Sihver, L.; Tang, H.H.K.; Truscott, P.R.

2013-01-01

This anthology contains contributions from eleven different groups, each developing and/or applying Monte Carlo-based radiation transport tools to simulate a variety of effects that result from energy transferred to a semiconductor material by a single particle event. The topics span from basic mechanisms for single-particle induced failures to applied tasks like developing web sites to predict on-orbit single event failure rates using Monte Carlo radiation transport tools. (authors)

Single event upsets correlated with environment

International Nuclear Information System (INIS)

Vampola, A.L.; Albin, F.; Lauriente, M.; Wilkinson, D.C.; Allen, J.

1994-01-01

Single Event Upset rates on satellites in different Earth orbits are correlated with solar protons and geomagnetic activity and also with the NASA AP8 proton model to extract information about satellite anomalies caused by the space environment. An extensive discussion of the SEU data base from the TOMS solid state recorder and an algorithm for correcting spontaneous upsets in it are included as an Appendix. SAMPEX and TOMS, which have the same memory chips, have similar normalized responses in the South Atlantic Anomaly. SEU rates due to solar protons over the polar caps are within expectations. No geomagnetic activity effects can be discerned in the SEU rates

Xenon gas field ion source from a single-atom tip

Science.gov (United States)

Lai, Wei-Chiao; Lin, Chun-Yueh; Chang, Wei-Tse; Li, Po-Chang; Fu, Tsu-Yi; Chang, Chia-Seng; Tsong, T. T.; Hwang, Ing-Shouh

2017-06-01

Focused ion beam (FIB) systems have become powerful diagnostic and modification tools for nanoscience and nanotechnology. Gas field ion sources (GFISs) built from atomic-size emitters offer the highest brightness among all ion sources and thus can improve the spatial resolution of FIB systems. Here we show that the Ir/W(111) single-atom tip (SAT) can emit high-brightness Xe+ ion beams with a high current stability. The ion emission current versus extraction voltage was analyzed from 150 K up to 309 K. The optimal emitter temperature for maximum Xe+ ion emission was ˜150 K and the reduced brightness at the Xe gas pressure of 1 × 10-4 torr is two to three orders of magnitude higher than that of a Ga liquid metal ion source, and four to five orders of magnitude higher than that of a Xe inductively coupled plasma ion source. Most surprisingly, the SAT emitter remained stable even when operated at 309 K. Even though the ion current decreased with increasing temperature, the current at room temperature (RT) could still reach over 1 pA when the gas pressure was higher than 1 × 10-3 torr, indicating the feasibility of RT-Xe-GFIS for application to FIB systems. The operation temperature of Xe-SAT-GFIS is considerably higher than the cryogenic temperature required for the helium ion microscope (HIM), which offers great technical advantages because only simple or no cooling schemes can be adopted. Thus, Xe-GFIS-FIB would be easy to implement and may become a powerful tool for nanoscale milling and secondary ion mass spectroscopy.

Production of multi-, oligo- and single-pore membranes using a continuous ion beam

Czech Academy of Sciences Publication Activity Database

Apel, P. Yu.; Ivanov, O.; Lizunov, N. E.; Mamonova, T. I.; Nechaev, A. N.; Olejniczak, K.; Vacík, Jiří; Dmitriev, S. N.

2015-01-01

Roč. 365, DEC (2015), s. 641-645 ISSN 0168-583X R&D Projects: GA MŠk LG14004 Institutional support: RVO:61389005 Keywords : ion beam * irradiation * ion track * etching * single nanopore Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.389, year: 2015

Simultaneous and Sequential MS/MS Scan Combinations and Permutations in a Linear Quadrupole Ion Trap.

Science.gov (United States)

Snyder, Dalton T; Szalwinski, Lucas J; Cooks, R Graham

2017-10-17

Methods of performing precursor ion scans as well as neutral loss scans in a single linear quadrupole ion trap have recently been described. In this paper we report methodology for performing permutations of MS/MS scan modes, that is, ordered combinations of precursor, product, and neutral loss scans following a single ion injection event. Only particular permutations are allowed; the sequences demonstrated here are (1) multiple precursor ion scans, (2) precursor ion scans followed by a single neutral loss scan, (3) precursor ion scans followed by product ion scans, and (4) segmented neutral loss scans. (5) The common product ion scan can be performed earlier in these sequences, under certain conditions. Simultaneous scans can also be performed. These include multiple precursor ion scans, precursor ion scans with an accompanying neutral loss scan, and multiple neutral loss scans. We argue that the new capability to perform complex simultaneous and sequential MS n operations on single ion populations represents a significant step in increasing the selectivity of mass spectrometry.

Single event effects in pulse width modulation controllers

International Nuclear Information System (INIS)

Penzin, S.H.; Crain, W.R.; Crawford, K.B.; Hansel, S.J.; Kirshman, J.F.; Koga, R.

1996-01-01

SEE testing was performed on pulse width modulation (PWM) controllers which are commonly used in switching mode power supply systems. The devices are designed using both Set-Reset (SR) flip-flops and Toggle (T) flip-flops which are vulnerable to single event upset (SEU) in a radiation environment. Depending on the implementation of the different devices the effect can be significant in spaceflight hardware

Ionomers for Ion-Conducting Energy Materials

Science.gov (United States)

Colby, Ralph

For ionic actuators and battery separators, it is vital to utilize single-ion conducting ionomers that avoid the detrimental polarization of other ions. Single-ion conducting ionomers are synthesized based on DFT calculations, with low glass transition temperatures (facile dynamics) to prepare ion-conducting membranes for battery separators that conduct Li+ or Na+. Characterization by X-ray scattering, dielectric spectroscopy, FTIR, NMR and linear viscoelasticity collectively develop a coherent picture of ionic aggregation and both counterion and polymer dynamics. 7Li NMR diffusion measurements find that diffusion is faster than expected by conductivity using the Nernst-Einstein equation, which means that the majority of Li diffusion occurs by ion pairs moving with the polymer segmental motion. Segmental motion only contributes to ionic conduction in the rare event that one of these ion pairs has an extra Li (a positive triple ion). This leads us to a new metric for ion-conducting soft materials, the product of the cation number density p0 and their diffusion coefficient D; p0D is the diffusive flux of lithium ions. This new metric has a maximum at intermediate ion content that corresponds to the overlap of ion pair polarizability volumes. At higher ion contents, the ion pairs interact strongly and form larger aggregation states that retard segmental motion of both mobile ion pairs and triple ions.

Scattering extraction of ions at CRYRING for SEU testing

CERN Document Server

Novák, D; Klamra, W; Norlin, L O; Bagge, L; Kaellberg, A; Paál, A; Rensfelt, K G; Molnár, J

1999-01-01

A measuring station has been built at the CRYRING heavy ion accelerator to test the Single Event Upset (SEU) phenomena in working Static RAM circuits. The setup extracts the beam using Rutherford scattering and the ions are monitored with a BaF sub 2 scintillator. SEU measurements have been performed for standard bulk CMOS memory circuits.

Energy dependence and temporal evolution of the 3He/4He ratios in heavy-ion-rich energetic particle events

International Nuclear Information System (INIS)

Moebius, E.; Hovestadt, D.; Klecker, B.; Gloeckler, G.

1980-01-01

The energy dependence of the 3 He/ 4 He ratio between 0.44 and 4.1 MeV per nucleon has been studied for six heavy-ion--rich events observed in 1974 and 1976 using the low-energy dE/dx versus E Ultralow-Energy Particle telescope (ULET) on IMP 8. We find that all selected heavy-ion--rich events are also enriched in 3 He, that the 3 He/ 4 He He ratio decreases with decreasing energies, and that a rapid temporal evolution of the 3 He/ 4 He and the Fe/(H+He) ratios is strongly correlated during one event with the maximum value at the onset. These results are discussed in terms of a model which is based on preferential injection of 3 He and Fe resulting from turbulent ion heating and subsequent Fermi acceleration

Single Cathode Ion Thruster

Data.gov (United States)

National Aeronautics and Space Administration — Objective is to design an electrostatic ion thruster that is more efficient, simpler, and lower cost than the current gridded ion thruster. Initial objective is to...

Single qubit manipulation in a microfabricated surface electrode ion trap

Science.gov (United States)

Mount, Emily; Baek, So-Young; Blain, Matthew; Stick, Daniel; Gaultney, Daniel; Crain, Stephen; Noek, Rachel; Kim, Taehyun; Maunz, Peter; Kim, Jungsang

2013-09-01

We trap individual 171Yb+ ions in a surface trap microfabricated on a silicon substrate, and demonstrate a complete set of high fidelity single qubit operations for the hyperfine qubit. Trapping times exceeding 20 min without laser cooling, and heating rates as low as 0.8 quanta ms-1, indicate stable trapping conditions in these microtraps. A coherence time of more than 1 s, high fidelity qubit state detection and single qubit rotations are demonstrated. The observation of low heating rates and demonstration of high quality single qubit gates at room temperature are critical steps toward scalable quantum information processing in microfabricated surface traps.

Single qubit manipulation in a microfabricated surface electrode ion trap

International Nuclear Information System (INIS)

Mount, Emily; Baek, So-Young; Gaultney, Daniel; Crain, Stephen; Noek, Rachel; Kim, Taehyun; Maunz, Peter; Kim, Jungsang; Blain, Matthew; Stick, Daniel

2013-01-01

We trap individual 171 Yb + ions in a surface trap microfabricated on a silicon substrate, and demonstrate a complete set of high fidelity single qubit operations for the hyperfine qubit. Trapping times exceeding 20 min without laser cooling, and heating rates as low as 0.8 quanta ms −1 , indicate stable trapping conditions in these microtraps. A coherence time of more than 1 s, high fidelity qubit state detection and single qubit rotations are demonstrated. The observation of low heating rates and demonstration of high quality single qubit gates at room temperature are critical steps toward scalable quantum information processing in microfabricated surface traps. (paper)

Capillary electrophoretic study of individual exocytotic events in single mast cells

Energy Technology Data Exchange (ETDEWEB)

Ho, Andrea Ming-Wei [Iowa State Univ., Ames, IA (United States)

1999-02-12

The peak profile of individual degranulation events from the on-column release of serotonin from single rat peritoneal mast cells (RPMCs) was monitored using capillary electrophoresis with laser-induced native fluorescence detection (CE-LINF). Serotonin, an important biogenic amine, is contained in granules (0.25 fL) within RPMCs and is extruded by a process termed exocytosis. The secretagogue, Polymyxin B sulfate, was used as the CE running buffer after injection of a single RPMC into the separation capillary to stimulate the release of the granules. Because the release process occurs on a ms time scale, monitoring individual exocytotic events is possible with the coupling of high-speed CE and LINF detection.

Preparation and coherent manipulation of pure quantum states of a single molecular ion

Science.gov (United States)

Chou, Chin-Wen; Kurz, Christoph; Hume, David B.; Plessow, Philipp N.; Leibrandt, David R.; Leibfried, Dietrich

2017-05-01

Laser cooling and trapping of atoms and atomic ions has led to advances including the observation of exotic phases of matter, the development of precision sensors and state-of-the-art atomic clocks. The same level of control in molecules could also lead to important developments such as controlled chemical reactions and sensitive probes of fundamental theories, but the vibrational and rotational degrees of freedom in molecules pose a challenge for controlling their quantum mechanical states. Here we use quantum-logic spectroscopy, which maps quantum information between two ion species, to prepare and non-destructively detect quantum mechanical states in molecular ions. We develop a general technique for optical pumping and preparation of the molecule into a pure initial state. This enables us to observe high-resolution spectra in a single ion (CaH+) and coherent phenomena such as Rabi flopping and Ramsey fringes. The protocol requires a single, far-off-resonant laser that is not specific to the molecule, so many other molecular ions, including polyatomic species, could be treated using the same methods in the same apparatus by changing the molecular source. Combined with the long interrogation times afforded by ion traps, a broad range of molecular ions could be studied with unprecedented control and precision. Our technique thus represents a critical step towards applications such as precision molecular spectroscopy, stringent tests of fundamental physics, quantum computing and precision control of molecular dynamics.

Lattice location of platinum ions implanted into single crystal zirconia and their annealing behaviour

Energy Technology Data Exchange (ETDEWEB)

Cao, D X [Royal Melbourne Inst. of Tech., VIC (Australia); Sood, D K [Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Nuclear Research; Brown, I G [Lawrence Berkeley Lab., CA (United States)

1994-12-31

Single crystal samples of (100) oriented cubic zirconia stabilised with 9.5 mol % yttria were implanted with platinum ions, using a metal vapour vacuum arc (MEVVA) high current ion implanter, to a nominal dose of 1x10{sup 17} ions/cm{sup 2}. The implanted samples were annealed isothermally in air ambient at 1200 deg C, from 1-24 hours. Rutherford Backscattering Spectrometry and Channeling (RBSC) of 2 MeV He ions are employed to determine depth distributions of ion damage, Pt ions and substitutionality of Pt ions before and after annealing. The damage behaviour, Pt migration and lattice location are discussed in terms of metastable phase formation and solid solubility considerations. 7 refs., 3 figs.

Lattice location of platinum ions implanted into single crystal zirconia and their annealing behaviour

Energy Technology Data Exchange (ETDEWEB)

Cao, D.X. [Royal Melbourne Inst. of Tech., VIC (Australia); Sood, D.K. [Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Nuclear Research; Brown, I.G. [Lawrence Berkeley Lab., CA (United States)

1993-12-31

Single crystal samples of (100) oriented cubic zirconia stabilised with 9.5 mol % yttria were implanted with platinum ions, using a metal vapour vacuum arc (MEVVA) high current ion implanter, to a nominal dose of 1x10{sup 17} ions/cm{sup 2}. The implanted samples were annealed isothermally in air ambient at 1200 deg C, from 1-24 hours. Rutherford Backscattering Spectrometry and Channeling (RBSC) of 2 MeV He ions are employed to determine depth distributions of ion damage, Pt ions and substitutionality of Pt ions before and after annealing. The damage behaviour, Pt migration and lattice location are discussed in terms of metastable phase formation and solid solubility considerations. 7 refs., 3 figs.

Towards radiocarbon dating of single foraminifera with a gas ion source

Science.gov (United States)

Wacker, L.; Lippold, J.; Molnár, M.; Schulz, H.

2013-01-01

Carbonate shells from foraminifera are often analysed for radiocarbon to determine the age of deep-sea sediments or to assess radiocarbon reservoir ages. However, a single foraminiferal test typically contains only a few micrograms of carbon, while most laboratories require more than 100 μg for radiocarbon dating with an accelerator mass spectrometry (AMS) system. The collection of the required amount of foraminifera for a single analyses is therefore time consuming and not always possible. Here, we present a convenient method to measure the radiocarbon content of foraminifera using an AMS system fitted with a gas ion source. CO2 is liberated from 150 to 1150 μg of carbonate in septum sealed vials by acid decomposition of the carbonate. The CO2 is collected on a zeolite trap and subsequently transferred to a syringe from where it is delivered to the ion source. A sample of 400 μg (50 μg C) typically gives a 12C- ion source current of 10-15 μA over 20 min, yielding a measurement precision of less than 7 per mil for a modern sample. Using this method, we were able to date a single 560 μg Cibicides pseudoungerianus test at 14,030 ± 160 radiocarbon years. Only a minor modification to our existing gas handling system was required and the system is fully automatable to further reduce the effort involved for sample preparation.

Towards radiocarbon dating of single foraminifera with a gas ion source

International Nuclear Information System (INIS)

Wacker, L.; Lippold, J.; Molnár, M.; Schulz, H.

2013-01-01

Carbonate shells from foraminifera are often analysed for radiocarbon to determine the age of deep-sea sediments or to assess radiocarbon reservoir ages. However, a single foraminiferal test typically contains only a few micrograms of carbon, while most laboratories require more than 100 μg for radiocarbon dating with an accelerator mass spectrometry (AMS) system. The collection of the required amount of foraminifera for a single analyses is therefore time consuming and not always possible. Here, we present a convenient method to measure the radiocarbon content of foraminifera using an AMS system fitted with a gas ion source. CO 2 is liberated from 150 to 1150 μg of carbonate in septum sealed vials by acid decomposition of the carbonate. The CO 2 is collected on a zeolite trap and subsequently transferred to a syringe from where it is delivered to the ion source. A sample of 400 μg (50 μg C) typically gives a 12 C − ion source current of 10–15 μA over 20 min, yielding a measurement precision of less than 7 per mil for a modern sample. Using this method, we were able to date a single 560 μg Cibicides pseudoungerianus test at 14,030 ± 160 radiocarbon years. Only a minor modification to our existing gas handling system was required and the system is fully automatable to further reduce the effort involved for sample preparation.

Towards radiocarbon dating of single foraminifera with a gas ion source

Energy Technology Data Exchange (ETDEWEB)

Wacker, L., E-mail: wacker@phys.ethz.ch [Laboratory of Ion Beam Physics, ETH Zurich, 8093 Zurich (Switzerland); Lippold, J. [Heidelberg Academy of Sciences, 69120 Heidelberg (Germany); Molnar, M. [Laboratory of Ion Beam Physics, ETH Zurich, 8093 Zurich (Switzerland); Institute of Nuclear Research, Hungarian Academy of Sciences, 4026 Debrecen (Hungary); Schulz, H. [Institute for Geosciencies, University of Tuebingen, 72076 Tuebingen (Germany)

2013-01-15

Carbonate shells from foraminifera are often analysed for radiocarbon to determine the age of deep-sea sediments or to assess radiocarbon reservoir ages. However, a single foraminiferal test typically contains only a few micrograms of carbon, while most laboratories require more than 100 {mu}g for radiocarbon dating with an accelerator mass spectrometry (AMS) system. The collection of the required amount of foraminifera for a single analyses is therefore time consuming and not always possible. Here, we present a convenient method to measure the radiocarbon content of foraminifera using an AMS system fitted with a gas ion source. CO{sub 2} is liberated from 150 to 1150 {mu}g of carbonate in septum sealed vials by acid decomposition of the carbonate. The CO{sub 2} is collected on a zeolite trap and subsequently transferred to a syringe from where it is delivered to the ion source. A sample of 400 {mu}g (50 {mu}g C) typically gives a {sup 12}C{sup -} ion source current of 10-15 {mu}A over 20 min, yielding a measurement precision of less than 7 per mil for a modern sample. Using this method, we were able to date a single 560 {mu}g Cibicides pseudoungerianus test at 14,030 {+-} 160 radiocarbon years. Only a minor modification to our existing gas handling system was required and the system is fully automatable to further reduce the effort involved for sample preparation.

The single-ion anisotropy effects in the mixed-spin ternary-alloy

Science.gov (United States)

Albayrak, Erhan

2018-04-01

The effect of single-ion anisotropy on the thermal properties of the ternary-alloy in the form of ABpC1-p is investigated on the Bethe lattice (BL) in terms of exact recursion relations. The simulation on the BL consists of placing A atoms (spin-1/2) on the odd shells and randomly placing B (spin-3/2) or C (spin-5/2) atoms with concentrations p and 1 - p, respectively, on the even shells. The phase diagrams are calculated in possible planes spanned by the system parameters: temperature, single-ion anisotropy, concentration and ratio of the bilinear interaction parameters for z = 3 corresponding to the honeycomb lattice. It is found that the crystal field drives the system to the lowest possible state therefore reducing the temperatures of the critical lines in agreement with the literature.

Single-word multiple-bit upsets in static random access devices

International Nuclear Information System (INIS)

Koga, R.; Pinkerton, S.D.; Lie, T.J.; Crawford, K.B.

1993-01-01

Energetic ions and protons can cause single event upsets (SEUs) in static random access memory (SRAM) cells. In some cases multiple bits may be upset as the result of a single event. Space-borne electronics systems incorporating high-density SRAM are vulnerable to single-word multiple-bit upsets (SMUs). The authors review here recent observations of SMU, present the results of a systematic investigation of the physical cell arrangements employed in several currently available SRAM device types, and discuss implications for the occurrence and mitigation of SMU

Silicon Carbide Power Device Performance Under Heavy-Ion Irradiation

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan; Topper, Alyson; Wilcox, Edward; Phan, Anthony; Ikpe, Stanley; LaBel, Ken

2015-01-01

Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices.

Stressful Life Event Experiences of Homeless Adults: A Comparison of Single Men, Single Women, and Women with Children

Science.gov (United States)

Zugazaga, Carole

2004-01-01

This article describes stressful life events experienced by a multi-shelter sample of 162 homeless adults in the Central Florida area. Participants included homeless single men (n = 54), homeless single women (n = 54), and homeless women with children (n = 54). Subjects were interviewed with a modified version of the List of Threatening…

Study of multiple scattering effects in heavy ion RBS

Energy Technology Data Exchange (ETDEWEB)

Fang, Z.; O`Connor, D.J. [Newcastle Univ., NSW (Australia). Dept. of Physics

1996-12-31

Multiple scattering effect is normally neglected in conventional Rutherford Backscattering (RBS) analysis. The backscattered particle yield normally agrees well with the theory based on the single scattering model. However, when heavy incident ions are used such as in heavy ion Rutherford backscattering (HIRBS), or the incident ion energy is reduced, multiple scattering effect starts to play a role in the analysis. In this paper, the experimental data of 6MeV C ions backscattered from a Au target are presented. In measured time of flight spectrum a small step in front of the Au high energy edge is observed. The high energy edge of the step is about 3.4 ns ahead of the Au signal which corresponds to an energy {approx} 300 keV higher than the 135 degree single scattering energy. This value coincides with the double scattering energy of C ion undergoes two consecutive 67.5 degree scattering. Efforts made to investigate the origin of the high energy step observed lead to an Monte Carlo simulation aimed to reproduce the experimental spectrum on computer. As a large angle scattering event is a rare event, two consecutive large angle scattering is extremely hard to reproduce in a random simulation process. Thus, the simulation has not found a particle scattering into 130-140 deg with an energy higher than the single scattering energy. Obviously faster algorithms and a better physical model are necessary for a successful simulation. 16 refs., 3 figs.

Study of multiple scattering effects in heavy ion RBS

Energy Technology Data Exchange (ETDEWEB)

Fang, Z; O` Connor, D J [Newcastle Univ., NSW (Australia). Dept. of Physics

1997-12-31

Multiple scattering effect is normally neglected in conventional Rutherford Backscattering (RBS) analysis. The backscattered particle yield normally agrees well with the theory based on the single scattering model. However, when heavy incident ions are used such as in heavy ion Rutherford backscattering (HIRBS), or the incident ion energy is reduced, multiple scattering effect starts to play a role in the analysis. In this paper, the experimental data of 6MeV C ions backscattered from a Au target are presented. In measured time of flight spectrum a small step in front of the Au high energy edge is observed. The high energy edge of the step is about 3.4 ns ahead of the Au signal which corresponds to an energy {approx} 300 keV higher than the 135 degree single scattering energy. This value coincides with the double scattering energy of C ion undergoes two consecutive 67.5 degree scattering. Efforts made to investigate the origin of the high energy step observed lead to an Monte Carlo simulation aimed to reproduce the experimental spectrum on computer. As a large angle scattering event is a rare event, two consecutive large angle scattering is extremely hard to reproduce in a random simulation process. Thus, the simulation has not found a particle scattering into 130-140 deg with an energy higher than the single scattering energy. Obviously faster algorithms and a better physical model are necessary for a successful simulation. 16 refs., 3 figs.

Heavy doping of CdTe single crystals by Cr ion implantation

Science.gov (United States)

Popovych, Volodymyr D.; Böttger, Roman; Heller, Rene; Zhou, Shengqiang; Bester, Mariusz; Cieniek, Bogumil; Mroczka, Robert; Lopucki, Rafal; Sagan, Piotr; Kuzma, Marian

2018-03-01

Implantation of bulk CdTe single crystals with high fluences of 500 keV Cr+ ions was performed to achieve Cr concentration above the equilibrium solubility limit of this element in CdTe lattice. The structure and composition of the implanted samples were studied using secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) to characterize the incorporation of chromium into the host lattice and to investigate irradiation-induced damage build-up. It was found that out-diffusion of Cr atoms and sputtering of the targets alter the depth distribution and limit concentration of the projectile ions in the as-implanted samples. Appearance of crystallographically oriented, metallic α-Cr nanoparticles inside CdTe matrix was found after implantation, as well as a strong disorder at the depth far beyond the projected range of the implanted ions.

Early Stage of Deformation under Nanoindenter Tip of Ion-irradiated Single Crystals

International Nuclear Information System (INIS)

Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun

2010-01-01

Ion irradiation has been used for almost 40 years to emulate the effect of neutrons. Ion irradiation has a number of advantages in terms of time and expenses compared to neutron irradiation. Ion irradiation is expected to greatly contribute to the development of Fusion and Gen IV materials. Ions have short penetration depth, and they induce continuously varying dose rate over the penetration depth. Although it depends on the energy and species of incident ions, the depth of ion-irradiated region is in general on the order of a few micron meters. Depth controlled probing technique is required to measure the mechanical properties of ion-irradiated layer, and nanoindentation is widely used. During nanoindentation, a hard tip with known properties is pressed into a material which has unknown properties. The depth of penetration and load on the indenter are recorded during loading and unloading. The initial Loading depth curve follows the Hertzian elastic solution, and at a certain load, a sudden displacement excursion occurs in indenter depth and then hardening follows. This is called 'Pop-in' event, and since residual impression can be found only after pop-ins, the pop-in is regarded as the onset of plasticity. The objectives of this research are to investigate the effects of ion irradiation on popins, and to examine dislocation nucleation and propagation at the onset of plasticity by using MD simulations

Early Stage of Deformation under Nanoindenter Tip of Ion-irradiated Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2010-10-15

Ion irradiation has been used for almost 40 years to emulate the effect of neutrons. Ion irradiation has a number of advantages in terms of time and expenses compared to neutron irradiation. Ion irradiation is expected to greatly contribute to the development of Fusion and Gen IV materials. Ions have short penetration depth, and they induce continuously varying dose rate over the penetration depth. Although it depends on the energy and species of incident ions, the depth of ion-irradiated region is in general on the order of a few micron meters. Depth controlled probing technique is required to measure the mechanical properties of ion-irradiated layer, and nanoindentation is widely used. During nanoindentation, a hard tip with known properties is pressed into a material which has unknown properties. The depth of penetration and load on the indenter are recorded during loading and unloading. The initial Loading depth curve follows the Hertzian elastic solution, and at a certain load, a sudden displacement excursion occurs in indenter depth and then hardening follows. This is called 'Pop-in' event, and since residual impression can be found only after pop-ins, the pop-in is regarded as the onset of plasticity. The objectives of this research are to investigate the effects of ion irradiation on popins, and to examine dislocation nucleation and propagation at the onset of plasticity by using MD simulations

Towards a precise measurement of atomic parity violation in a single Ra+ ion

International Nuclear Information System (INIS)

Nuñez Portela, M.; Berg, J. E. van den; Bekker, H.; Böll, O.; Dijck, E. A.; Giri, G. S.; Hoekstra, S.; Jungmann, K.; Mohanty, A.; Onderwater, C. J. G.; Santra, B.; Schlesser, S.; Timmermans, R. G. E.; Versolato, O. O.; Wansbeek, L. W.; Willmann, L.; Wilschut, H. W.

2013-01-01

A single trapped Ra  +  (Z = 88) ion provides a very promising route towards a most precise measurement of Atomic Parity Violation (APV), since APV effects grow faster than Z 3 . This experiment promises the best determination of the electroweak coupling constant at the lowest accessible energies. Such a measurement provides a sensitive test of the Standard Model in particle physics. At the present stage of the experiment, we focus on trapping and laser cooling stable Ba  +  ions as a precursor for radioactive Ra  +  . Online laser spectroscopy of the isotopes 209 − 214 Ra  +  in a linear Paul trap has provided information on transition wavelengths, fine and hyperfine structures and excited state lifetimes as test of atomic structure calculations. Additionaly, a single trapped Ra  +  ion could function as a very stable clock.

CDW-EIS model for single-electron capture in ion-atom collisions involving multielectronic targets

International Nuclear Information System (INIS)

Abufager, P N; MartInez, A E; Rivarola, R D; Fainstein, P D

2004-01-01

A generalization of the continuum distorted wave eikonal initial state (CDW-EIS) approximation, for the description of single-electron capture in ion-atom collisions involving multielectronic targets is presented. This approximation is developed within the framework of the independent electron model taking particular care of the representation of the bound and continuum target states. Total cross sections for single-electron capture from the K-shell of He, Ne and Ar noble gases by impact of bare ions are calculated. Present results are compared to previous CDW-EIS ones and to experimental data

Study of transient current induced by heavy-ion microbeams in Si and GaAs

Energy Technology Data Exchange (ETDEWEB)

Hirao, Toshio; Nashiyama, Isamu; Kamiya, Tomihiro; Suda, Tamotu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

Heavy-ion microbeams were applied to the study of mechanism of single event upset (SEU). Transient current induced in p{sup +}n junction diodes by strike of heavy ion microbeam were measured by using a high-speed digitizing sampling system. (author)

Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Science.gov (United States)

Scheick, Leif

2011-01-01

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

Effect of body biasing on single-event induced charge collection in deep N-well technology

International Nuclear Information System (INIS)

Ding Yi; Hu Jian-Guo; Tan Hong-Zhou; Qin Jun-Rui

2015-01-01

As the device size decreases, the soft error induced by space ions is becoming a great concern for the reliability of integrated circuits (ICs). At present, the body biasing technique is widely used in highly scaled technologies. In the paper, using the three-dimensional technology computer-aided design (TCAD) simulation, we analyze the effect of the body biasing on the single-event charge collection in deep N-well technology. Our simulation results show that the body biasing mainly affects the behavior of the source, and the effect of body biasing on the charge collection for the nMOSFET and pMOSFET is quite different. For the nMOSFET, the RBB will increase the charge collection, while the FBB will reduce the charge collection. For the pMOSFET, the effect of RBB on the SET pulse width is small, while the FBB has an adverse effect. Moreover, the differenceof the effect of body biasing on the charge collection is compared in deep N-well and twin well. (paper)

Interaction of singly and multiply charged ions with a lithium-fluoride surface

International Nuclear Information System (INIS)

Wirtz, L.

2001-10-01

Charge transfer between slow ions and an ionic crystal surface still poses a considerable challenge to theory due to the intrinsic many-body character of the system. For the neutralization of multiply charged ions in front of metal surfaces, the Classical Over the Barrier (COB) model is a widely used tool. We present an extension of this model to ionic crystal surfaces where the localization of valence electrons at the anion sites and the lack of cylindrical symmetry of the ion-surface system impede a simple analytical estimate of electron transfer rates. We use a classical trajectory Monte Carlo approach to calculate electron transfer rates for different charge states of the projectile ion. With these rates we perform a Monte Carlo simulation of the neutralization of slow Ne10+ ions in vertical incidence on an LiF surface. Capture of one or several electrons may lead to a local positive charge up of the surface. The projectile dynamics depends on the balance between the repulsion due to this charge and the attraction due to the self-image potential. In a simulation that treats electronic and nuclear dynamics simultaneously, we show that the image attraction dominates over the repulsive force. Backscattering of very slow multiply charged projectiles high above the surface without touching it ('trampoline effect') does not take place. Instead, the projectile ion penetrates into the surface or is reflected due to close binary collision with surface ions. The case of a singly charged ion in front of an LiF surface is within the reach of ab-initio calculations. We use a multi-configuration self consistent field (MCSCF) and a multi-reference configuration interaction (MR-CI) method to calculate adiabatic potential energy curves for a system consisting of the projectile ion and an embedded cluster of surface ions. With increasing cluster size, the energy levels of the embedded cluster converge towards the band structure of the infinitely extended solid. Due to

Impact of repeated single-metal and multi-metal pollution events on soil quality.

Science.gov (United States)

Burges, Aritz; Epelde, Lur; Garbisu, Carlos

2015-02-01

Most frequently, soil metal pollution results from the occurrence of repeated single-metal and, above all, multi-metal pollution events, with concomitant adverse consequences for soil quality. Therefore, in this study, we evaluated the impact of repeated single-metal and multi-metal (Cd, Pb, Cu, Zn) pollution events on soil quality, as reflected by the values of a variety of soil microbial parameters with potential as bioindicators of soil functioning. Specifically, parameters of microbial activity (potentially mineralizable nitrogen, β-glucosidase and acid phosphatase activity) and biomass (fungal and bacterial gene abundance by RT-qPCR) were determined, in the artificially metal-polluted soil samples, at regular intervals over a period of 26 weeks. Similarly, we studied the evolution over time of CaCl2-extractable metal fractions, in order to estimate metal bioavailability in soil. Different metals showed different values of bioavailability and relative bioavailability ([metal]bio/[metal]tot) in soil throughout the experiment, under both repeated single-metal and multi-metal pollution events. Both repeated Zn-pollution and multi-metal pollution events led to a significant reduction in the values of acid phosphatase activity, and bacterial and fungal gene abundance, reflecting the negative impact of these repeated events on soil microbial activity and biomass, and, hence, soil quality. Copyright © 2014 Elsevier Ltd. All rights reserved.

Can tokamaks PFC survive a single event of any plasma instabilities?

Science.gov (United States)

Hassanein, A.; Sizyuk, V.; Miloshevsky, G.; Sizyuk, T.

2013-07-01

Plasma instability events such as disruptions, edge-localized modes (ELMs), runaway electrons (REs), and vertical displacement events (VDEs) are continued to be serious events and most limiting factors for successful tokamak reactor concept. The plasma-facing components (PFCs), e.g., wall, divertor, and limited surfaces of a tokamak as well as coolant structure materials are subjected to intense particle and heat loads and must maintain a clean and stable surface environment among them and the core/edge plasma. Typical ITER transient events parameters are used for assessing the damage from these four different instability events. HEIGHTS simulation showed that a single event of a disruption, giant ELM, VDE, or RE can cause significant surface erosion (melting and vaporization) damage to PFC, nearby components, and/or structural materials (VDE, RE) melting and possible burnout of coolant tubes that could result in shut down of reactor for extended repair time.

Can tokamaks PFC survive a single event of any plasma instabilities?

International Nuclear Information System (INIS)

Hassanein, A.; Sizyuk, V.; Miloshevsky, G.; Sizyuk, T.

2013-01-01

Plasma instability events such as disruptions, edge-localized modes (ELMs), runaway electrons (REs), and vertical displacement events (VDEs) are continued to be serious events and most limiting factors for successful tokamak reactor concept. The plasma-facing components (PFCs), e.g., wall, divertor, and limited surfaces of a tokamak as well as coolant structure materials are subjected to intense particle and heat loads and must maintain a clean and stable surface environment among them and the core/edge plasma. Typical ITER transient events parameters are used for assessing the damage from these four different instability events. HEIGHTS simulation showed that a single event of a disruption, giant ELM, VDE, or RE can cause significant surface erosion (melting and vaporization) damage to PFC, nearby components, and/or structural materials (VDE, RE) melting and possible burnout of coolant tubes that could result in shut down of reactor for extended repair time

Can tokamaks PFC survive a single event of any plasma instabilities?

Energy Technology Data Exchange (ETDEWEB)

Hassanein, A., E-mail: hassanein@purdue.edu [Center for Materials under Extreme Environment, School of Nuclear Engineering, Purdue University, 400 Central Drive, West Lafayette, IN 47907 (United States); Sizyuk, V.; Miloshevsky, G.; Sizyuk, T. [Center for Materials under Extreme Environment, School of Nuclear Engineering, Purdue University, 400 Central Drive, West Lafayette, IN 47907 (United States)

2013-07-15

Plasma instability events such as disruptions, edge-localized modes (ELMs), runaway electrons (REs), and vertical displacement events (VDEs) are continued to be serious events and most limiting factors for successful tokamak reactor concept. The plasma-facing components (PFCs), e.g., wall, divertor, and limited surfaces of a tokamak as well as coolant structure materials are subjected to intense particle and heat loads and must maintain a clean and stable surface environment among them and the core/edge plasma. Typical ITER transient events parameters are used for assessing the damage from these four different instability events. HEIGHTS simulation showed that a single event of a disruption, giant ELM, VDE, or RE can cause significant surface erosion (melting and vaporization) damage to PFC, nearby components, and/or structural materials (VDE, RE) melting and possible burnout of coolant tubes that could result in shut down of reactor for extended repair time.

Studies of energetic ion confinement during fishbone events in PDX

International Nuclear Information System (INIS)

Strachan, J.D.; Grek, B.; Heidbrink, W.; Johnson, D.; Kaye, S.; Kugel, H.; LeBlanc, B.; McGuire, K.

1984-11-01

The 2.5-MeV neutron emission from the beam-target d(d,n,) 3 He fusion reaction has been examined for all PDX deuterium plasmas which were heated by deuterium neutral beams. The magnitude of the emission was found to scale classically and increase with T/sub e//sup 3/2/ as expected when electron drag is the primary energy degradation mechanism. The time evolution of the neutron emission through fishbone events was measured and used to determine the confinement properties of the energetic beam ions. Many of the experimental results are predicted by the Mode Particle Pumping theory

Development of a Nuclear Reaction Database on Silicon for Simulation of Neutron-Induced Single-Event Upsets in Microelectronics and its Application

International Nuclear Information System (INIS)

Watanabe, Yukinobu; Kodama, Akihiro; Tukamoto, Yasuyuki; Nakashima, Hideki

2005-01-01

We have developed a cross-section database for neutron-induced reactions on 28Si in the energy range between 2 MeV and 3 GeV in order to analyze single-event upsets (SEUs) phenomena induced by cosmic-ray neutrons in microelectronic devices. A simplified spherical device model is proposed for simulation of the initial processes of SEUs. The model is applied to SEU cross-section calculations for semiconductor memory devices. The calculated results are compared with measured SEU cross sections and the other simulation result. The dependence of SEU cross sections on incident neutron energy and secondary ions having the most important effects on SEUs are discussed

Ground-state phase diagram of an (S, S') = (1, 2) spin-alternating chain with competing single-ion anisotropies

International Nuclear Information System (INIS)

Tonegawa, T; Okamoto, K; Sakai, T; Kaburagi, M

2009-01-01

Employing various numerical methods, we determine the ground-state phase diagram of an (S, S') = (1, 2) spin-alternating chain with antiferromagnetic nearest-neighboring exchange interactions and uniaxial single-ion anisotropies. The resulting phase diagram consists of eight kinds of phases including two phases which accompany the spontaneous breaking of the translational symmetry and a ferrimagnetic phase in which the ground-state magnetization varies continuously with the uniaxial single-ion anisotropy constants for the S=1 and S =2 spins. The appearance of these three phases is attributed to the competition between the uniaxial single-ion anisotropies of both spins.

High temperature electron beam ion source for the production of single charge ions of most elements of the Periodic Table

CERN Document Server

Panteleev, V N; Barzakh, A E; Fedorov, D V; Ivanov, V S; Moroz, F V; Orlov, S Y; Seliverstov, D M; Stroe, L; Tecchio, L B; Volkov, Y M

2003-01-01

A new type of a high temperature electron beam ion source (HTEBIS) with a working temperature up to 2500 deg. C was developed for production of single charge ions of practically all elements. Off-line tests and on-line experiments making use of the developed ion source coupled with uranium carbide targets of different density, have been carried out. The ionization efficiency measured for stable atoms of many elements varied in the interval of 1-6%. Using the HTEBIS, the yields and on-line production efficiency of neutron rich isotopes of Mn, Fe, Co, Cu, Rh, Pd, Ag, Cd, In, Sn and isotopes of heavy elements Pb, Bi, Po and some others have been determined. The revealed confinement effect of the ions produced in the narrow electron beam inside a hot ion source cavity has been discussed.

Effective tuning of the ratio of red to green emission of Ho"3"+ ions in single LiLuF_4 microparticle via codoping Ce"3"+ ions

International Nuclear Information System (INIS)

Gao, Wei; Dong, Jun; Liu, Jihong; Yan, Xuewen

2016-01-01

Yb"3"+/Ho"3"+ codoped LiLuF_4 microparticles have been successfully prepared via a facile hydrothermal method. The crystal phase and morphology of LiLuF_4 microparticles were inspected by x-ray diffraction and scanning electron microscope, respectively. The upconversion emission of single LiLuF_4: Yb"3"+/Ho"3"+ microparticle was carefully studied by a confocal microscopy setup under NIR 980 nm excitation. With the increase of Ce"3"+ ion concentrations of 12%, the ratio of red to green emission of the Ho"3"+ ions of single LiLuF_4 microparticle was boosted about 17-fold, and the output colors were tuned from green to red, which is due to the two efficient cross-relaxation between Ho"3"+ and Ce"3"+ ions enhances the red and suppresses the green in the emission processes. To investigate the optical properties of the single microparticle or nanoparticle through the confocal microscopy setup can effectively avoid the influence of surrounding particle or environment, and could provide more precise information for better exploring the emission mechanisms of rare earth ions. The tunable upconversion emission of Ho"3"+ in single LiLuF_4 microparticle in this work will have great potential applications in the micro optoelectronic devices and color display applications. - Highlights: • The optical properties of the single LiLuF4: Yb3+/Ho3+/Ce3+ microparticle were studied. • The output colors of single LiLuF4 microparticle were tuned from green to red. • The upconversion mechanisms between Ho3+ and Ce3+ ions were discussed based on emission spectrum.

Plasma immersion ion implantation: duplex layers from a single process

International Nuclear Information System (INIS)

Hutchings, R.; Collins, G.A.; Tendys, J.

1992-01-01

Plasma immersion ion implantation (PI 3 ) is an alternative non-line-of-sight technique for implanting ions directly from a plasma which surrounds the component to be treated. In contrast to plasma source ion implantation, the PI 3 system uses an inductively coupled r.f. plasma. It is shown that nitrogen can be retained during implantation at elevated temperatures, even for unalloyed steels. This allows controlled diffusion of nitrogen to greater depths, thereby improving the load bearing capacity of the implanted layer. Components can be heated directly, using the energy deposited by the incident ions during the pulsed implantation. The necessary temperature control can be accomplished simply by regulating the frequency and length of the high voltage pulses applied to the component. Chemical depth profiles and microstructural data obtained from H13 tool steel are used to show that PI 3 can, in a single process, effectively produce a duplex subsurface structure. This structure consists of an outer non-equilibrium layer typical of nitrogen implantation (containing in excess of 20 at.% nitrogen) backed by a substantial diffusion zone of much lower nitrogen content. The relationship between implantation temperature and the resultant subsurface microstructure is explored. (orig.)

Towards a precise measurement of atomic parity violation in a single Ra{sup +} ion

Energy Technology Data Exchange (ETDEWEB)

Nunez Portela, M., E-mail: nunez@kvi.nl; Berg, J. E. van den; Bekker, H.; Boell, O.; Dijck, E. A.; Giri, G. S.; Hoekstra, S.; Jungmann, K.; Mohanty, A.; Onderwater, C. J. G.; Santra, B.; Schlesser, S.; Timmermans, R. G. E.; Versolato, O. O.; Wansbeek, L. W.; Willmann, L.; Wilschut, H. W. [Kernfysisch Versneller Instituut (KVI) (Netherlands)

2013-03-15

A single trapped Ra{sup + } (Z = 88) ion provides a very promising route towards a most precise measurement of Atomic Parity Violation (APV), since APV effects grow faster than Z{sup 3}. This experiment promises the best determination of the electroweak coupling constant at the lowest accessible energies. Such a measurement provides a sensitive test of the Standard Model in particle physics. At the present stage of the experiment, we focus on trapping and laser cooling stable Ba{sup + } ions as a precursor for radioactive Ra{sup + }. Online laser spectroscopy of the isotopes {sup 209 - 214}Ra{sup + } in a linear Paul trap has provided information on transition wavelengths, fine and hyperfine structures and excited state lifetimes as test of atomic structure calculations. Additionaly, a single trapped Ra{sup + } ion could function as a very stable clock.

Synthesizing single-phase β-FeSi2 via ion beam irradiations of Fe/Si bilayers

International Nuclear Information System (INIS)

Milosavljevic, M.; Dhar, S.; Schaaf, P.; Bibic, N.; Lieb, K.P.

2001-01-01

This paper presents results on the direct synthesis of the β-FeSi 2 phase by ion beam mixing of Fe/Si bilayers with Xe ions. The influence of the substrate temperature, ion fluence and energy on the growth of this phase was investigated using Rutherford backscattering (RBS), X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). Complete growth of single-phase β-FeSi 2 was achieved by 205 keV Xe ion irradiation to a fluence of 2x10 16 ions/cm 2 at 600 deg. C. We propose a two-step reaction mechanism involving thermal and ion beam energy deposition

Single trapped cold ions: a testing ground for quantum mechanics

International Nuclear Information System (INIS)

Maniscalco, S

2005-01-01

In this article I review some results obtained during my PhD work in the group of Professor Messina, at the University of Palermo. I discuss some proposals aimed at exploring fundamental issues of quantum theory, e.g. entanglement and quantum superpositions, in the context of single trapped ions. This physical context turns out to be extremely well suited both for studying fundamental features of quantum mechanics, such as the quantum-classical border, and for technological applications such as quantum logic gates and quantum registers. I focus on some procedures for engineering nonclassical states of the vibrational motion of the centre of mass of the ion. I consider both the case in which the ion interacts with classical laser beams and the case of interaction with a quantized mode of light. In particular, I discuss the generation of Schroedinger cat-like states, Bell states and Greenberger-Horn-Zeilinger states. The schemes for generating nonclassical states stem from two different quantum processes: the parity effect and the quantum state manipulation via quantum non-demolition measurement. Finally, I consider a microscopic theory of the interaction of a quantum harmonic oscillator (the centre of mass of the ion in the trapped ion context) with a bosonic thermal environment. Using an exact approach to the dynamics, I discuss a quantum theory of heating of trapped ions able to describe both the short time non-Markovian regime and the thermalization process. I conclude showing briefly how the trapped ion systems can be used as simulators of key models of open quantum systems such as the Caldeira-Leggett model. (phd tutorial)

Influence of strong single-ion anisotropy on phase states of 3D and 2D frustrated magnets

International Nuclear Information System (INIS)

Fridman, Yu.A.; Kosmachev, O.A.; Matunin, D.A.; Gorelikov, G.A.; Klevets, Ph.N.

2010-01-01

We investigated the influence of strong single-ion anisotropy, exceeding exchange interaction, and frustrated exchange interaction on spin-wave excitation spectra and phase states using the Hubbard operators' technique, allowing the exact account of single-ion anisotropy. The results show that both the homogeneous phases (ferromagnetic and quadrupolar) and the spatially inhomogeneous phase (spiral structure) are possible in the 3D magnetic crystal. The region of existence of the spiral structure is considerably smaller than that in the analogues system, but with weak single-ion anisotropy. The situation is more complex in the 2D system; another spatially inhomogeneous state (the domain structure) can be realized in addition to the spiral magnetic structure. The phase diagrams for both the 3D and 2D systems were plotted.

Source Regions of the Interplanetary Magnetic Field and Variability in Heavy-Ion Elemental Composition in Gradual Solar Energetic Particle Events

Science.gov (United States)

Ko, Yuan-Kuen; Tylka, Allan J.; Ng, Chee K.; Wang, Yi-Ming; Dietrich, William F.

2013-01-01

Gradual solar energetic particle (SEP) events are those in which ions are accelerated to their observed energies by interactions with a shock driven by a fast coronal mass-ejection (CME). Previous studies have shown that much of the observed event-to-event variability can be understood in terms of shock speed and evolution in the shock-normal angle. But an equally important factor, particularly for the elemental composition, is the origin of the suprathermal seed particles upon which the shock acts. To tackle this issue, we (1) use observed solar-wind speed, magnetograms, and the PFSS model to map the Sun-L1 interplanetary magnetic field (IMF) line back to its source region on the Sun at the time of the SEP observations; and (2) then look for correlation between SEP composition (as measured by Wind and ACE at approx. 2-30 MeV/nucleon) and characteristics of the identified IMF-source regions. The study is based on 24 SEP events, identified as a statistically-significant increase in approx. 20 MeV protons and occurring in 1998 and 2003-2006, when the rate of newly-emergent solar magnetic flux and CMEs was lower than in solar-maximum years and the field-line tracing is therefore more likely to be successful. We find that the gradual SEP Fe/O is correlated with the field strength at the IMF-source, with the largest enhancements occurring when the footpoint field is strong, due to the nearby presence of an active region. In these cases, other elemental ratios show a strong charge-to-mass (q/M) ordering, at least on average, similar to that found in impulsive events. These results lead us to suggest that magnetic reconnection in footpoint regions near active regions bias the heavy-ion composition of suprathermal seed ions by processes qualitatively similar to those that produce larger heavy-ion enhancements in impulsive SEP events. To address potential technical concerns about our analysis, we also discuss efforts to exclude impulsive SEP events from our event sample.

Irradiation of zinc single crystal with 500 keV singly-charged carbon ions: surface morphology, structure, hardness, and chemical modifications

Science.gov (United States)

Waqas Khaliq, M.; Butt, M. Z.; Saleem, Murtaza

2017-07-01

Cylindrical specimens of (1 0 4) oriented zinc single crystal (diameter  =  6 mm and length  =  5 mm) were irradiated with 500 keV C+1 ions with the help of a Pelletron accelerator. Six specimens were irradiated in an ultra-high vacuum (~10‒8 Torr) with different ion doses, namely 3.94  ×  1014, 3.24  ×  1015, 5.33  ×  1015, 7.52  ×  1015, 1.06  ×  1016, and 1.30  ×  1016 ions cm-2. A field emission scanning electron microscope (FESEM) was utilized for the morphological study of the irradiated specimens. Formation of nano- and sub-micron size rods, clusters, flower- and fork-like structures, etc, was observed. Surface roughness of the irradiated specimens showed an increasing trend with the ions dose. Energy dispersive x-ray spectroscopy (EDX) helped to determine chemical modifications in the specimens. It was found that carbon content varied in the range 22.86-31.20 wt.% and that oxygen content was almost constant, with an average value of 10.16 wt.%. The balance content was zinc. Structural parameters, i.e. crystallite size and lattice strain, were determined by Williamson-Hall analysis using x-ray diffraction (XRD) patterns of the irradiated specimens. Both crystallite size and lattice strain showed a decreasing trend with the increasing ions dose. A good linear relationship between crystallite size and lattice strain was observed. Surface hardness depicted a decreasing trend with the ions dose and followed an inverse Hall-Petch relation. FTIR spectra of the specimens revealed that absorption bands gradually diminish as the dose of singly-charged carbon ions is increased from 3.94  ×  1014 ions cm-1 to 1.30  ×  1016 ions cm-1. This indicates progressive deterioration of chemical bonds with the increase in ion dose.

MeV single-ion beam irradiation of mammalian cells using the Surrey vertical nanobeam, compared with broad proton beam and X-ray irradiations

Energy Technology Data Exchange (ETDEWEB)

Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Jeynes, J.C.G.; Merchant, M.J.; Kirkby, K.; Kirkby, N. [Surrey Ion Beam Center, Faculty of Engineering and Physical Science, University of Surrey, Guildford Surrey, GU2 7XH (United Kingdom); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: •Recently completed nanobeam at the Surrey Ion Beam Centre was used. •3.8-MeV single and broad proton beams irradiated Chinese hamster cells. •Cell survival curves were measured and compared with 300-kV X-ray irradiation. •Single ion irradiation had a lower survival part at ultra-low dose. •It implies hypersensitivity, bystander effect and cell cycle phase of cell death. -- Abstract: As a part of a systematic study on mechanisms involved in physical cancer therapies, this work investigated response of mammalian cells to ultra-low-dose ion beam irradiation. The ion beam irradiation was performed using the recently completed nanobeam facility at the Surrey Ion Beam Centre. A scanning focused vertical ion nano-beam was applied to irradiate Chinese hamster V79 cells. The V79 cells were irradiated in two different beam modes, namely, focused single ion beam and defocused scanning broad ion beam of 3.8-MeV protons. The single ion beam was capable of irradiating a single cell with a precisely controlled number of the ions to extremely low doses. After irradiation and cell incubation, the number of surviving colonies as a function of the number of the irradiating ions was measured for the cell survival fraction curve. A lower survival for the single ion beam irradiation than that of the broad beam case implied the hypersensitivity and bystander effect. The ion-beam-induced cell survival curves were compared with that from 300-kV X-ray irradiation. Theoretical studies indicated that the cell death in single ion irradiation mainly occurred in the cell cycle phases of cell division and intervals between the cell division and the DNA replication. The success in the experiment demonstrated the Surrey vertical nanobeam successfully completed.

Modifications of gallium phosphide single crystals using slow highly charged ions and swift heavy ions

Energy Technology Data Exchange (ETDEWEB)

El-Said, A.S., E-mail: elsaid@kfupm.edu.sa [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Wilhelm, R.A.; Heller, R.; Akhmadaliev, Sh.; Schumann, E. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Sorokin, M. [National Research Centre ’Kurchatov Institute’, Kurchatov Square 1, 123182 Moscow (Russian Federation); Facsko, S. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Trautmann, C. [GSI Helmholtz Centre for Heavy Ion Research, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64289 Darmstadt (Germany)

2016-09-01

GaP single crystals were irradiated with slow highly charged ions (HCI) using 114 keV {sup 129}Xe{sup (33–40)+} and with various swift heavy ions (SHI) of 30 MeV I{sup 9+} and 374 MeV–2.2 GeV {sup 197}Au{sup 25+}. The irradiated surfaces were investigated by scanning force microscopy (SFM). The irradiations with SHI lead to nanohillocks protruding from the GaP surfaces, whereas no changes of the surface topography were observed after the irradiation with HCI. This result indicates that a potential energy above 38.5 keV is required for surface nanostructuring of GaP. In addition, strong coloration of the GaP crystals was observed after irradiation with SHI. The effect was stronger for higher energies. This was confirmed by measuring an increased extinction coefficient in the visible light region.

Response of rat spinal cord to single and fractionated doses of accelerated heavy ions

International Nuclear Information System (INIS)

Leith, J.L.; McDonald, M.; Powers-Risius, P.; Bliven, S.F.; Walton, R.E.; Woodruff, K.H.; Howard, J.

1980-01-01

The response of rat spinal cord to irradiation with accelerated heavy ions, in particular carbon and neon ions has been studied. Two different ionization regions in the modified Bragg curve for each ion have been studied for both single and fractionated exposures. We have defined the paralytic response as a function of dose and dose per fraction, and we have determined RBE and repair values. The response of rat spinal cord is both dose and LET dependent, which allows the derivation of RBE and repair values

Validation of an "Intelligent Mouthguard" Single Event Head Impact Dosimeter.

Science.gov (United States)

Bartsch, Adam; Samorezov, Sergey; Benzel, Edward; Miele, Vincent; Brett, Daniel

2014-11-01

Dating to Colonel John Paul Stapp MD in 1975, scientists have desired to measure live human head impacts with accuracy and precision. But no instrument exists to accurately and precisely quantify single head impact events. Our goal is to develop a practical single event head impact dosimeter known as "Intelligent Mouthguard" and quantify its performance on the benchtop, in vitro and in vivo. In the Intelligent Mouthguard hardware, limited gyroscope bandwidth requires an algorithm-based correction as a function of impact duration. After we apply gyroscope correction algorithm, Intelligent Mouthguard results at time of CG linear acceleration peak correlate to the Reference Hybrid III within our tested range of pulse durations and impact acceleration profiles in American football and Boxing in vitro tests: American football, IMG=1.00REF-1.1g, R2=0.99; maximum time of peak XYZ component imprecision 3.6g and 370 rad/s2; maximum time of peak azimuth and elevation imprecision 4.8° and 2.9°; maximum average XYZ component temporal imprecision 3.3g and 390 rad/s2. Boxing, IMG=1.00REF-0.9 g, R2=0.99, R2=0.98; maximum time of peak XYZ component imprecision 3.9 g and 390 rad/s2, maximum time of peak azimuth and elevation imprecision 2.9° and 2.1°; average XYZ component temporal imprecision 4.0 g and 440 rad/s2. In vivo Intelligent Mouthguard true positive head impacts from American football players and amateur boxers have temporal characteristics (first harmonic frequency from 35 Hz to 79 Hz) within our tested benchtop (first harmonic frequencyIntelligent Mouthguard qualifies as a single event dosimeter in American football and Boxing.

Single-event burnout of power MOSFET devices for satellite application

International Nuclear Information System (INIS)

Xue Yuxiong; Tian Kai; Cao Zhou; Yang Shiyu; Liu Gang; Cai Xiaowu; Lu Jiang

2008-01-01

Single-event burnout (SEB) sensitivity was tested for power MOSFET devices, JTMCS081 and JTMCS062, which were made in Institute of Microelectronics, Chinese Academy of Sciences, using californium-252 simulation source. SEB voltage threshold was found for devices under test (DUT). It is helpful for engineers to choose devices used in satellites. (authors)

Axial ion-electron emission microscopy of IC radiation hardness

Science.gov (United States)

Doyle, B. L.; Vizkelethy, G.; Walsh, D. S.; Swenson, D.

2002-05-01

A new system for performing radiation effects microscopy (REM) has been developed at Sandia National Laboratory in Albuquerque. This system combines two entirely new concepts in accelerator physics and nuclear microscopy. A radio frequency quadrupole (RFQ) linac is used to boost the energy of ions accelerated by a conventional Tandem Van de Graaff-Pelletron to velocities of 1.9 MeV/amu. The electronic stopping power for heavy ions is near a maximum at this velocity, and their range is ˜20 μm in Si. These ions therefore represent the most ionizing form of radiation in nature, and are nearly ideal for performing single event effects testing of integrated circuits. Unfortunately, the energy definition of the RFQ-boosted ions is rather poor (˜ a few %), which makes problematic the focussing of such ions to the submicron spots required for REM. To circumvent this problem, we have invented ion electron emission microscopy (IEEM). One can perform REM with the IEEM system without focussing or scanning the ion beam. This is because the position on the sample where each ion strikes is determined by projecting ion-induced secondary electrons at high magnification onto a single electron position sensitive detector. This position signal is then correlated with each REM event. The IEEM system is now mounted along the beam line in an axial geometry so that the ions pass right through the electron detector (which is annular), and all of the electrostatic lenses used for projection. The beam then strikes the sample at normal incidence which results in maximum ion penetration and removes a parallax problem experienced in an earlier system. Details of both the RFQ-booster and the new axial IEEM system are given together with some of the initial results of performing REM on Sandia-manufactured radiation hardened integrated circuits.

Dimer self-organization of impurity ytterbium ions in synthetic forsterite single crystals

Science.gov (United States)

Tarasov, V. F.; Sukhanov, A. A.; Dudnikova, V. B.; Zharikov, E. V.; Lis, D. A.; Subbotin, K. A.

2017-07-01

Paramagnetic centers formed by impurity Yb3+ ions in synthetic forsterite (Mg2SiO4) grown by the Czochralski technique are studied by X-band CW and pulsed EPR spectroscopy. These centers are single ions substituting magnesium in two different crystallographic positions denoted M1 and M2, and dimer associates formed by two Yb3+ ions in nearby positions M1. It is established that there is a pronounced mechanism favoring self-organization of ytterbium ions in dimer associates during the crystal growth, and the mechanism of the spin-spin coupling between ytterbium ions in the associate has predominantly a dipole-dipole character, which makes it possible to control the energy of the spin-spin interaction by changing the orientation of the external magnetic field. The structural computer simulation of cluster ytterbium centers in forsterite crystals is carried out by the method of interatomic potentials using the GULP 4.0.1 code (General Utility Lattice Program). It is established that the formation of dimer associates in the form of a chain parallel to the crystallographic axis consisting of two ytterbium ions with a magnesium vacancy between them is the most energetically favorable for ytterbium ions substituting magnesium in the position M1.

Single photon imaging at ultra-high resolution

Energy Technology Data Exchange (ETDEWEB)

Bellazzini, R. [INFN sez. Pisa, Pisa (Italy); Spandre, G. [INFN sez. Pisa, Pisa (Italy)], E-mail: Gloria.Spandre@pi.infn.it; Minuti, M.; Brez, A.; Baldini, L.; Latronico, L.; Omodei, N.; Sgro, C.; Bregeon, J.; Razzano, M.; Pinchera, M. [INFN sez. Pisa, Pisa (Italy); Tremsin, A.; McPhate, J.; Vallerga, J.V.; Siegmund, O. [SSL, Berkeley (United States)

2008-06-11

We present a detection system capable of imaging both single photon/positive ion and multiple coincidence photons/positive ions with extremely high spatial resolution. In this detector the photoelectrons excited by the incoming photons are multiplied by microchannel plate(s) (MCP). The process of multiplication is spatially constrained within an MCP pore, which can be as small as 4 {mu}m for commercially available MCPs. An electron cloud originated by a single photoelectron is then encoded by a pixellated custom analog ASIC consisting of 105 K charge sensitive pixels of 50 {mu}m in size arranged on a hexagonal grid. Each pixel registers the charge with an accuracy of <100 electrons rms. Computation of the event centroid from the readout charges results in an accurate event position. A large number of simultaneous photons spatially separated by {approx}0.4 mm can be detected simultaneously allowing multiple coincidence operation for the experiments where a large number of incoming photons/positive ions have to be detected simultaneously. The experimental results prove that the spatial resolution of the readout system itself is {approx}3 {mu}m FWHM enabling detection resolution better than 6 {mu}m for the small pore MCPs. An attractive feature of the detection system is its capability to register the timing of each incoming photon/positive ion (in single photon detection mode) or of the first incoming particle (for the multiple coincidence detection) with an accuracy of {approx}130 ps FWHM. There is also virtually no dark count noise in the detection system making it suitable for low count rate applications.

Oxygen ion uplift and satellite drag effects during the 30 October 2003 daytime superfountain event

Directory of Open Access Journals (Sweden)

B. T. Tsurutani

2007-03-01

Full Text Available The prompt penetration of interplanetary electric fields (IEFs to the dayside low-latitude ionosphere during the first ~2 h of a superstorm is estimated and applied to a modified NRL SAMI2 code for the 30 October 2003 event. In our simulations, the dayside ionospheric O+ is convected to higher altitudes (~600 km and higher latitudes (~±25° to 30°, forming highly displaced equatorial ionospheric anomaly (EIA peaks. This feature plus others are consistent with previously published CHAMP electron (TEC measurements and with the dayside superfountain model. The rapid upward motion of the O+ ions causes neutral oxygen (O uplift due to ion-neutral drag. It is estimated that above ~400 km altitude the O densities within the displaced EIAs can be increased substantially over quiet time values. The latter feature will cause increased drag for low-altitude satellites. This newly predicted phenomenon is expected to be typical for superstorm/IEF events.

Oxygen ion uplift and satellite drag effects during the 30 October 2003 daytime superfountain event

Directory of Open Access Journals (Sweden)

B. T. Tsurutani

2007-03-01

Full Text Available The prompt penetration of interplanetary electric fields (IEFs to the dayside low-latitude ionosphere during the first ~2 h of a superstorm is estimated and applied to a modified NRL SAMI2 code for the 30 October 2003 event. In our simulations, the dayside ionospheric O⁺ is convected to higher altitudes (~600 km and higher latitudes (~±25° to 30°, forming highly displaced equatorial ionospheric anomaly (EIA peaks. This feature plus others are consistent with previously published CHAMP electron (TEC measurements and with the dayside superfountain model. The rapid upward motion of the O⁺ ions causes neutral oxygen (O uplift due to ion-neutral drag. It is estimated that above ~400 km altitude the O densities within the displaced EIAs can be increased substantially over quiet time values. The latter feature will cause increased drag for low-altitude satellites. This newly predicted phenomenon is expected to be typical for superstorm/IEF events.

3-D topological signatures and a new discrimination method for single-electron events and 0νββ events in CdZnTe: A Monte Carlo simulation study

Energy Technology Data Exchange (ETDEWEB)

Zeng, Ming; Li, Teng-Lin; Cang, Ji-Rong [Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education (China); Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Zeng, Zhi, E-mail: zengzhi@tsinghua.edu.cn [Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education (China); Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Fu, Jian-Qiang; Zeng, Wei-He; Cheng, Jian-Ping; Ma, Hao; Liu, Yi-Nong [Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education (China); Department of Engineering Physics, Tsinghua University, Beijing 100084 (China)

2017-06-21

In neutrinoless double beta (0νββ) decay experiments, the diversity of topological signatures of different particles provides an important tool to distinguish double beta events from background events and reduce background rates. Aiming at suppressing the single-electron backgrounds which are most challenging, several groups have established Monte Carlo simulation packages to study the topological characteristics of single-electron events and 0νββ events and develop methods to differentiate them. In this paper, applying the knowledge of graph theory, a new topological signature called REF track (Refined Energy-Filtered track) is proposed and proven to be an accurate approximation of the real particle trajectory. Based on the analysis of the energy depositions along the REF track of single-electron events and 0νββ events, the REF energy deposition models for both events are proposed to indicate the significant differences between them. With these differences, this paper presents a new discrimination method, which, in the Monte Carlo simulation, achieved a single-electron rejection factor of 93.8±0.3 (stat.)% as well as a 0νββ efficiency of 85.6±0.4 (stat.)% with optimized parameters in CdZnTe.

Investigating change of properties in gallium ion irradiation patterned single-layer graphene

Energy Technology Data Exchange (ETDEWEB)

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China); Dong, Jinyao; Bai, Bing [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Xie, Guoxin [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

2016-10-14

Besides its excellent physical properties, graphene promises to play a significant role in electronics with superior properties, which requires patterning of graphene for device integration. Here, we presented the changes in properties of single-layer graphene before and after patterning using gallium ion beam. Combined with Raman spectra of graphene, the scanning capacitance microscopy (SCM) image confirmed that a metal–insulator transition occurred after large doses of gallium ion irradiation. The changes in work function and Raman spectra of graphene indicated that the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. The patterning width of graphene presented an increasing trend due to the scattering influence of the impurities and the substrate. - Highlights: • The scanning capacitance microscopy image confirmed a metal–insulator transition occurred after large doses of gallium ion irradiation. • The changes indicated the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. • The patterning width of graphene presented a increasing trend due to the scattering influence of the impurities and the substrate.

Live cell imaging combined with high-energy single-ion microbeam

Science.gov (United States)

Guo, Na; Du, Guanghua; Liu, Wenjing; Guo, Jinlong; Wu, Ruqun; Chen, Hao; Wei, Junzhe

2016-03-01

DNA strand breaks can lead to cell carcinogenesis or cell death if not repaired rapidly and efficiently. An online live cell imaging system was established at the high energy microbeam facility at the Institute of Modern Physics to study early and fast cellular response to DNA damage after high linear energy transfer ion radiation. The HT1080 cells expressing XRCC1-RFP were irradiated with single high energy nickel ions, and time-lapse images of the irradiated cells were obtained online. The live cell imaging analysis shows that strand-break repair protein XRCC1 was recruited to the ion hit position within 20 s in the cells and formed bright foci in the cell nucleus. The fast recruitment of XRCC1 at the ion hits reached a maximum at about 200 s post-irradiation and then was followed by a slower release into the nucleoplasm. The measured dual-exponential kinetics of XRCC1 protein are consistent with the proposed consecutive reaction model, and the measurements obtained that the reaction rate constant of the XRCC1 recruitment to DNA strand break is 1.2 × 10-3 s-1 and the reaction rate constant of the XRCC1 release from the break-XRCC1 complex is 1.2 × 10-2 s-1.

Single electron attachment and stripping cross sections for relativistic heavy ions

International Nuclear Information System (INIS)

Crawford, H.J.

1979-06-01

The results of a Bevalac experiment to measure the single electron attachment and stripping cross sections for relativistic (0.5 1 , and fully stripped, N 0 , ion beams emerging from the targets. Separate counters measured the number of ions in each charge state. The ratios N 1 /N 0 for different target thicknesses were fit to a simple growth curve to yield electron attachment and stripping cross sections. The data are compared to relativistic extrapolations of available theories. Clear evidence for two separate attachment processes, radiative and non-radiative, is found. Data are compared to a recently improved formulation for the stripping cross sections

Quantum phase transitions in spin-1 X X Z chains with rhombic single-ion anisotropy

Science.gov (United States)

Ren, Jie; Wang, Yimin; You, Wen-Long

2018-04-01

We explore numerically the inverse participation ratios in the ground state of one-dimensional spin-1 X X Z chains with the rhombic single-ion anisotropy. By employing the techniques of density-matrix renormalization group, effects of the rhombic single-ion anisotropy on various information theoretical measures are investigated, such as the fidelity susceptibility, the quantum coherence, and the entanglement entropy. Their relations with the quantum phase transitions are also analyzed. The phase transitions from the Y -Néel phase to the large-Ex or the Haldane phase can be well characterized by the fidelity susceptibility. The second-order derivative of the ground-state energy indicates all the transitions are of second order. We also find that the quantum coherence, the entanglement entropy, the Schmidt gap, and the inverse participation ratios can be used to detect the critical points of quantum phase transitions. Results drawn from these quantum information observables agree well with each other. Finally we provide a ground-state phase diagram as functions of the exchange anisotropy Δ and the rhombic single-ion anisotropy E .

Ion implantation effects in single crystal Si investigated by Raman spectroscopy

International Nuclear Information System (INIS)

Harriman, T.A.; Lucca, D.A.; Lee, J.-K.; Klopfstein, M.J.; Herrmann, K.; Nastasi, M.

2009-01-01

A study of the effects of Ar ion implantation on the structural transformation of single crystal Si investigated by confocal Raman spectroscopy is presented. Implantation was performed at 77 K using 150 keV Ar ++ with fluences ranging from 2 x 10 13 to 1 x 10 15 ions/cm 2 . The Raman spectra showed a progression from crystalline to highly disordered structure with increasing fluence. The 520 cm -1 c-Si peak was seen to decrease in intensity, broaden and exhibit spectral shifts indicating an increase in lattice disorder and changes in the residual stress state. In addition, an amorphous Si band first appeared as a shoulder on the 520 cm -1 peak and then shifted to lower wavenumbers as a single broadband peak with a spectral center of 465 cm -1 . Additionally, the emergence of the a-Si TA phonon band and the decrease of the c-Si 2TA and 2TO phonon bands also indicated the same structural transition from crystalline to highly disordered. The Raman results were compared to those obtained by channeling RBS.

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

Science.gov (United States)

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Trapped-ion anomalous diffusion coefficient on the basis of single mode saturation

International Nuclear Information System (INIS)

Koshi, Yuji; Hatayama, Akiyoshi; Ogasawara, Masatada.

1982-03-01

Expressions of the anomalous diffusion coefficient due to the dissipative trapped ion instability (DTII) are derived for the case with and without the effect of magnetic shear. Derivation is made by taking into account of the single mode saturation of the DTII previously obtained numerically. In the absence of the shear effect, the diffusion coefficient is proportional to #betta#sub(i)a 2 (#betta#sub(i) is the effective collision frequency of the trapped ions and a is the minor radius of a torus) and is much larger than the neoclassical ion heat conductivity. In the presence of the shear effect, the diffusion coefficient is much smaller than the Kadomtsev and Pogutse's value and is the same order of magnitude as the neoclassical ion heat conductivity. Dependences of the diffusion coefficient on the temperature and on the total particle number density are rather complicated due to the additional spectral cut-off, which is introduced to regularize the short wavelength modes in the numerical analysis. (author)

Ionoluminescence analysis of glass scintillators and application to single-ion-hit real-time detection

Energy Technology Data Exchange (ETDEWEB)

Yokoyama, Akihito, E-mail: yokoyama.akihito@jaea.go.jp [Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjin-cho, Kiryu, Gunma 376-8515 (Japan); Takasaki Advanced Radiation Research Institute (TARRI), Japan Atomic Energy Agency (JAEA), 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Kada, Wataru [Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjin-cho, Kiryu, Gunma 376-8515 (Japan); Satoh, Takahiro; Koka, Masashi [Takasaki Advanced Radiation Research Institute (TARRI), Japan Atomic Energy Agency (JAEA), 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Shimada, Keisuke; Yokoata, Yuya; Miura, Kenta; Hanaizumi, Osamu [Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjin-cho, Kiryu, Gunma 376-8515 (Japan)

2016-03-15

In this paper, we propose and test a real-time detection system for single-ion hits using mega-electronvolt (MeV)-heavy ions. The system was constructed using G2000 and G9 glass scintillators, as well as an electron-multiplying charge-coupled device (EMCCD) camera combined with an inverted microscope with a 10× objective lens. Commercially available G2000 and G9 glass scintillators, which have been reported to exhibit strong photoluminescence at 489, 543, 585, and 622 nm as a result of the Tb{sup 3+} f–f transition, were employed for highly accurate ionized particle detection. The EMCCD camera had a resolution of 512 × 512 pixels, each with a size of 16 μm × 16 μm, and a maximum linear gain of 8 × 10{sup 5} electrons. For 260-MeV Ne, 3 ion hits/s were detected by our system. The intensity of the ionoluminescence (IL) peak induced by the heavy ions was 140 times the noise intensity. In contrast, the luminous diameter at the full width at half maximum (FWHM) in both the horizontal and vertical directions was calculated to be approximately 4.5 μm. These results suggest that our detection system can accurately detect single-ion hits with a diameter of the order of 1 μm.

Ionization in matrix-assisted laser desorption/ionization: singly charged molecular ions are the lucky survivors.

Science.gov (United States)

Karas, M; Glückmann, M; Schäfer, J

2000-01-01

A new model for the ionization processes in UV matrix-assisted laser desorption/ionization (MALDI) which accounts for the major phenomena observed is presented and discussed. The model retains elements of earlier approaches, such as photoionization and photochemical reactions, but it redefines these in the light of new working questions, most importantly why only singly charged ions are detected. Based on experimental evidence, the formation of singly and multiply charged clusters by a deficiency/excess of ions and also by photoionization and subsequent photochemical processes is pointed out to be the major ionization processes, which typically occur in parallel. The generation of electrons and their partial loss into the surrounding vacuum and solid, on the one hand, results in a positively charged ion-neutral plume facilitating a high overall ionization yield. On the other hand, these electrons, and also the large excess of protonated matrix ions in the negative ion mode, induce effective ion reneutralization in the plume. These neutralization processes are most effective for the highly charged cluster ions initially formed. Their fragmentation behaviour is evidenced in fast metastable fragmentation characteristics and agrees well with an electron capture dissociation mechanism and the enthalpy transfer upon neutralization forms the rationale for the prominent fragmentation and intense chemical noise accompanying successful MALDI. Within the course of the paper, cross-correlations with other desorption/ionization techniques and with earlier discussions on their mechanisms are drawn. Copyright 2000 John Wiley & Sons, Ltd.

Techniques and multi-disciplinary applications of ion microbeam

International Nuclear Information System (INIS)

Du Guanghua

2012-01-01

Beam of MeV ions form particle accelerators can be confined by collimators or focused by electrical/magnetic quadruples into micrometer size, and this microbeam can be used to obtain spatial information or radiation effect in solids and biological samples. This paper reviews the technical developments and the multi-disciplinary applications of microbeam, including ion beam analysis, single event effect in semiconductor devices, proton beam writing and cellular response to targeted particle irradiations. Finally, the high-energy heavy-ion microbeam facility at the Institute of Modern Physics of Chinese Academy of Sciences is introduced, which has successfully focused 1 GeV Carbon ions into a beam spot of 1 μm × 2 μm in air. (authors)

Single and binary adsorption of Cd (Ⅱ) and Zn (Ⅱ) ions from aqueous solutions onto bottom ash

Energy Technology Data Exchange (ETDEWEB)

Sukpreabprom, Hatairat; Arqueropanyo, Orn-anong; Naksata, Wimol; Janhom, Sorapong [Chiang Mai University, Chiang Mai (Thailand); Sooksamiti, Ponlayuth [The Office of Primary Industries and Mines Region 3, Chiang Mai (Thailand)

2015-05-15

Bottom ash, a waste obtained from coal-burning power plant, was used as a low cost adsorbent for the removal of Cd (Ⅱ) and Zn (Ⅱ) ions from single and binary systems in batch experiments. The results of adsorption capacity showed that bottom ash could be considered as a potential adsorbent. The uptake of Zn (Ⅱ) ion was greater than that of Cd (Ⅱ) ion. For single adsorption, based on the correlation coefficient (R{sup 2}) values, both Langmuir and Freundlich isotherms suitably described the adsorption equilibrium data in the initial metal ion concentration range of 10-50 mg/L. The multicomponent isotherms, including the extended Langmuir and IAST-Freundlich isotherms, were used to predict the binary adsorption of Cd (Ⅱ) and Zn (Ⅱ) ions. Furthermore, the appropriate multicomponent isotherm was investigated by minimizing the average relative error (ARE) function. It should be confirmed that the extended Langmuir isotherm fitted the binary adsorption equilibrium data satisfactorily.

Single Event Upset Studies Using the ATLAS SCT

CERN Document Server

Dafinca, A; The ATLAS collaboration; Weidberg, A R

2014-01-01

Single Event Upsets (SEU) are expected to occur during high luminosity running of the ATLAS SemiConductor Tracker (SCT). The SEU cross sections were measured in pion beams with momenta in the range 200 to 465 MeV/c and proton test beams at 24 GeV/c but the extrapolation to LHC conditions is non-trivial because of the range of particle types and momenta. The SEUs studied occur in the p-i-n photodiode and the registers in the ABCD chip. Comparisons between predicted SEU rates and those measured from ATLAS data are presented. The implications for ATLAS operation are discussed

Modeling of Single Event Transients With Dual Double-Exponential Current Sources: Implications for Logic Cell Characterization

Science.gov (United States)

Black, Dolores A.; Robinson, William H.; Wilcox, Ian Z.; Limbrick, Daniel B.; Black, Jeffrey D.

2015-08-01

Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. The parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.

Response of rat spinal cord to single and fractionated doses of accelerated heavy ions

International Nuclear Information System (INIS)

Leith, J.T.; McDonald, M.; Powers-Risius, P.; Bliven, S.F.; Howard, J.

1982-01-01

The thoraco-lumbar (T12-L1) region of the spinal cord of rats was exposed to either single or fractionated (four daily exposures) doses of X rays (230 kVp) or heavy ions. The heavy ions used were carbon and neon, and the relative biological effectiveness (RBE) of both the plateau ionization region and the midpeak region of 4-cm spread-out Bragg peaks of each heavy ion were investigated. For single doses of carbon and neon ions in the plateau ionization region, RBE values of 1.45 +/- 0.25 (propagated 95% confidence limits) and 1.46 +/- 0.33, respectively, were obtained. In the spread peak regions for carbon and neon ions, the RBE values were 1.48 +/- 0.18 and 1.86 +/- 0.42, respectively. These values were obtained using the dose needed to produce 50% paralysis in a group of irradiated rats as the isoeffect comparison dose (ED 50 dose). Similarly, in groups of rats receiving four daily exposures, the RBE values for carbon and neon ions in the plateau ionization region were 1.31 +/- 0.27 and 1.80 +/- 0.24, respectively. In the spread peak regions of ionization for carbon and neon ions, the RBE values were 1.95 +/- 0.19 and 2.18 +/- 0.23, respectively. Similar values for RBE were obtained using changes in the activity of enzymes in spinal cord tissue (cyclic nucleotide phosphohydrolase and γ-glutamyl transpeptidase). Also, it was estimated that, for X irradiation, the fractional amount of dose repaired (at the ED 50 dose) was 0.64 +/- 0.10 (95% confidence limits). For carbon and neon ions in the plateau ionization region, the values for the fractional amount of dose repaired were 0.70 +/- 0.27 and 0.48 +/- 0.20, and for carbon and neon ions in the spread peak region of ionization, the fractional repair values were 0.40 +/- 0.10 and 0.52 +/- 0.17. Spinal cord tissue therefore shows a high capacity for subeffective damage repair

Conjugate observations of electromagnetic ion cyclotron waves associated with traveling convection vortex events

Science.gov (United States)

Kim, Hyomin; Clauer, C. Robert; Gerrard, Andrew J.; Engebretson, Mark J.; Hartinger, Michael D.; Lessard, Marc R.; Matzka, Jürgen; Sibeck, David G.; Singer, Howard J.; Stolle, Claudia; Weimer, Daniel R.; Xu, Zhonghua

2017-07-01

We report on simultaneous observations of electromagnetic ion cyclotron (EMIC) waves associated with traveling convection vortex (TCV) events caused by transient solar wind dynamic pressure (Pd) impulse events. The Time History of Events and Macroscale Interactions during Substorms (THEMIS) spacecraft located near the magnetopause observed radial fluctuations of the magnetopause, and the GOES spacecraft measured sudden compressions of the magnetosphere in response to sudden increases in Pd. During the transient events, EMIC waves were observed by interhemispheric conjugate ground-based magnetometer arrays as well as the GOES spacecraft. The spectral structures of the waves appear to be well correlated with the fluctuating motion of the magnetopause, showing compression-associated wave generation. In addition, the wave features are remarkably similar in conjugate hemispheres in terms of bandwidth, quasiperiodic wave power modulation, and polarization. Proton precipitation was also observed by the DMSP spacecraft during the wave events, from which the wave source region is estimated to be 72°-74° in magnetic latitude, consistent with the TCV center. The confluence of space-borne and ground instruments including the interhemispheric, high-latitude, fluxgate/induction coil magnetometer array allows us to constrain the EMIC source region while also confirming the relationship between EMIC waves and the TCV current system.

Live cell imaging combined with high-energy single-ion microbeam

Energy Technology Data Exchange (ETDEWEB)

Guo, Na; Du, Guanghua, E-mail: gh-du@impcas.ac.cn; Liu, Wenjing; Wu, Ruqun; Wei, Junzhe [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou (China); Guo, Jinlong [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou (China); Northwest Normal University, Lanzhou (China); Chen, Hao [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou (China); Institute of Nuclear Science and Technology, University of Lanzhou, Lanzhou (China)

2016-03-15

DNA strand breaks can lead to cell carcinogenesis or cell death if not repaired rapidly and efficiently. An online live cell imaging system was established at the high energy microbeam facility at the Institute of Modern Physics to study early and fast cellular response to DNA damage after high linear energy transfer ion radiation. The HT1080 cells expressing XRCC1-RFP were irradiated with single high energy nickel ions, and time-lapse images of the irradiated cells were obtained online. The live cell imaging analysis shows that strand-break repair protein XRCC1 was recruited to the ion hit position within 20 s in the cells and formed bright foci in the cell nucleus. The fast recruitment of XRCC1 at the ion hits reached a maximum at about 200 s post-irradiation and then was followed by a slower release into the nucleoplasm. The measured dual-exponential kinetics of XRCC1 protein are consistent with the proposed consecutive reaction model, and the measurements obtained that the reaction rate constant of the XRCC1 recruitment to DNA strand break is 1.2 × 10{sup −3} s{sup −1} and the reaction rate constant of the XRCC1 release from the break-XRCC1 complex is 1.2 × 10{sup −2} s{sup −1}.

Live cell imaging combined with high-energy single-ion microbeam

International Nuclear Information System (INIS)

Guo, Na; Du, Guanghua; Liu, Wenjing; Wu, Ruqun; Wei, Junzhe; Guo, Jinlong; Chen, Hao

2016-01-01

DNA strand breaks can lead to cell carcinogenesis or cell death if not repaired rapidly and efficiently. An online live cell imaging system was established at the high energy microbeam facility at the Institute of Modern Physics to study early and fast cellular response to DNA damage after high linear energy transfer ion radiation. The HT1080 cells expressing XRCC1-RFP were irradiated with single high energy nickel ions, and time-lapse images of the irradiated cells were obtained online. The live cell imaging analysis shows that strand-break repair protein XRCC1 was recruited to the ion hit position within 20 s in the cells and formed bright foci in the cell nucleus. The fast recruitment of XRCC1 at the ion hits reached a maximum at about 200 s post-irradiation and then was followed by a slower release into the nucleoplasm. The measured dual-exponential kinetics of XRCC1 protein are consistent with the proposed consecutive reaction model, and the measurements obtained that the reaction rate constant of the XRCC1 recruitment to DNA strand break is 1.2 × 10"−"3 s"−"1 and the reaction rate constant of the XRCC1 release from the break-XRCC1 complex is 1.2 × 10"−"2 s"−"1.

A fast online hit verification method for the single ion hit system at GSI

International Nuclear Information System (INIS)

Du, G.; Fischer, B.; Barberet, P.; Heiss, M.

2006-01-01

For a single ion hit facility built to irradiate specific targets inside biological cells, it is necessary to prove that the ions hit the selected targets reliably because the ion hits usually cannot be seen. That ability is traditionally tested either indirectly by aiming at pre-etched tracks in a nuclear track detector or directly by making the ion tracks inside cells visible using a stain coupled to special proteins produced in response to ion hits. However, both methods are time consuming and hits can be verified only after the experiment. This means that targeting errors in the experiment cannot be corrected during the experiment. Therefore, we have developed a fast online hit verification method that measures the targeting accuracy electronically with a spatial resolution of ±1 μm before cell irradiation takes place. (authors)

Design and Fabrication of a Single Cusp Magnetic Field Type Hydrogen ion Source

Energy Technology Data Exchange (ETDEWEB)

Kim, Su Hun

1996-02-15

A single-cusp type hydrogen ion source has been designed and fabricated. In order to increase the efficiency of the plasma production, a single-cusp type magnet circuit and an electrostatic reflector were installed. The Poission Group Code was used to predict the distribution of magnetic field in the plasma chamber. In order to design the accel.-decel. extraction part for forming the ion beam with low emmitance and high current density, EGUN code was used. The results of calculation show that the configuration of plasma electrode strongly affects the beam quality and the deceleration electrode only functions the repression of the electron stream. When the plasma-accel potential is -20kV and an accel.-decel. potential is 1kV, the calculated extraction current, normalized emittance and perveance are 20.6mA, 1.28x 10{sup -7} m {center_dot} rad and 7.87 x 10{sup -9}A {center_dot} V{sup -3/2}, respectively. This study on the improvement of beam quality and the achievement of high ion beam current will contribute to the analysis of fusion plasma and the research on the surface physics.

Design and Fabrication of a Single Cusp Magnetic Field Type Hydrogen ion Source

International Nuclear Information System (INIS)

Kim, Su Hun

1996-02-01

A single-cusp type hydrogen ion source has been designed and fabricated. In order to increase the efficiency of the plasma production, a single-cusp type magnet circuit and an electrostatic reflector were installed. The Poission Group Code was used to predict the distribution of magnetic field in the plasma chamber. In order to design the accel.-decel. extraction part for forming the ion beam with low emmitance and high current density, EGUN code was used. The results of calculation show that the configuration of plasma electrode strongly affects the beam quality and the deceleration electrode only functions the repression of the electron stream. When the plasma-accel potential is -20kV and an accel.-decel. potential is 1kV, the calculated extraction current, normalized emittance and perveance are 20.6mA, 1.28x 10 -7 m · rad and 7.87 x 10 -9 A · V -3/2 , respectively. This study on the improvement of beam quality and the achievement of high ion beam current will contribute to the analysis of fusion plasma and the research on the surface physics

Results of single-event multilevel orthopedic surgery in children with cerebral palsy

Directory of Open Access Journals (Sweden)

Akhmed Tomov

2015-11-01

Full Text Available Background: Single-event multilevel orthopedic surgery is a modern approach in the operative treatment of children with cerebral palsy. Methods: Single-event multilevel orthopedic surgery was carried out in 108 patients with cerebral palsy. Patients’ average age was 11.3±1.7 years. Surgical results were analyzed at follow-up after 18 to 24 months, by way of detailed physical examination, functional assessment, imaging, the Edinburgh Visual Gait Score and Gillette Functional Assessment Questionnaire. Results: In our series, 647 procedures were performed during 141 surgeries. Patients had an average of 4.59 procedures per surgery. Observational gait analysis showed an improvement in stance and swing gait phases in ambulatory children. According to the Gillette Functional Assessment Questionnaire, an increase of functional level was noted in 50 patients but did not change in 32 patients. Conclusions: For children with cerebral palsy, single-event multilevel surgery is defined as two or more surgical procedures of the soft tissue or bone at two or more anatomical levels during one operative procedure. In cases where a large volume of surgery is required, two separate operations with a short break in between, but requiring only one hospital admission and one rehabilitation period, are also included. This approach requires adapted methods of surgical intervention, and appropriate methods of anesthesia and pain control in the postoperative period to the start of rehabilitation. Compliance with the above principles allowed the necessary correction of orthopedic complications to be achieved in all cases.

Features of produced flows of multiply charged ions at interaction of laser radiation with single-component solids

International Nuclear Information System (INIS)

Bedilov, M.R.; Bedilov, R.M.; Beysembaeva, H.B.; Sabitov, M.S.; Kamalova, J.O.

2006-01-01

Full text: The results of study features of formation multiply charged ions spectra of single-component solids depending on a target element composition in an interval of laser radiation power density q = 10 7 / 10 12 W/cm 2 with using of the laser multiply charged mass spectrometer [1] are given in this work. As single-component targets are used Be, B, C, Al, Ti, Fe, Co, Ni, Cu, Ag, Ta, W, Pt, Au as tablets in diameter of 10 mm and thickness of 3-5 mm. Analysis of the obtained mass-charge and energy spectra of multiply charged ions depending on a target element composition has allowed us to find features of formation spectra and escape multiply charged ions of a single-component targets. These features consist in characteristic changes: a threshold produced of ions; formation of mass-charge and energy spectra of multiply charged ions; nonlinear dependence of maximal charge number (Z max ) of ions from power density (q) of the laser; etc. Experimentally it was found that, with target atomic weight increase, threshold power of ions occurrence, nonlinearity ionization target structure, and intensity of ions, and energy spectra of ions increase. Let's note that, in case of targets Be, B, C, Al by laser radiation it is completely ionized and multiply charged ions and nuclei Be 4+ , B 5+ , C 6+ , Al 13+ are formed. The major level of ionization is attained in case of targets from Ti (Ti 17+ ) and Co (Co 18+ ). It is peculiar that structure formation and escape of multiply charged ion flows with Z max and nuclei depending on target element composition corresponds to various maximal values q of the laser. Increase of the maximal charge number of ions (atoms) observed with increase q of the laser for all investigated targets has nonlinear dependence in various levels that is especially shown beginning from q≥ 10 11 W/cm 2 . It is found that depending on target element composition multiply charged ions have a wide energy range with a maximum of allocation. With increase

Scaling of ion implanted Si:P single electron devices

International Nuclear Information System (INIS)

Escott, C C; Hudson, F E; Chan, V C; Petersson, K D; Clark, R G; Dzurak, A S

2007-01-01

We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n + ) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number

Scaling of ion implanted Si:P single electron devices

Energy Technology Data Exchange (ETDEWEB)

Escott, C C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Hudson, F E [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Chan, V C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Petersson, K D [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Clark, R G [Centre for Quantum Computer Technology, School of Physics, UNSW, Sydney, 2052 (Australia); Dzurak, A S [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia)

2007-06-13

We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n{sup +}) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number.

Damage evolution in Xe-ion irradiated rutile (TiO2) single crystals

International Nuclear Information System (INIS)

Li, F.; Sickafus, K.E.; Evans, C.R.; Nastasi, M.

1999-01-01

Rutile (TiO 2 ) single crystals with (110) orientation were irradiated with 360 keV Xe 2+ ions at 300 K to fluences ranging from 2 x 10 19 to 1 x 10 20 Xe/m 2 . Irradiated samples were analyzed using: (1) Rutherford backscattering spectroscopy combined with ion channeling analysis (RBS/C); and (2) cross-sectional transmission electron microscopy (XTEM). Upon irradiation to a fluence of 2 x 10 19 Xe/m 2 , the sample thickness penetrated by the implanted ions was observed to consist of three distinct layers: (1) a defect-free layer at the surface (thickness about 12 nm) exhibiting good crystallinity; (2) a second layer with a low density of relatively large-sized defects; and (3) a third layer consisting of a high concentration of small defects. After the fluence was increased to 7 x 10 19 Xe/m 2 , a buried amorphous layer was visible by XTEM. The thickness of the amorphous layer was found to increase with increasing Xe ion fluence. The location of this buried amorphous layer was found to coincide with the measured peak in the Xe concentration (measured by RBS/C), rather than with the theoretical maximum in the displacement damage profile. This observation suggests the implanted Xe ions may serve as nucleation sites for the amorphization transformation. The total thickness of the damaged microstructure due to ion irradiation was always found to be much greater than the projected range of the Xe ions. This is likely due to point defect migration under the high stresses induced by ion implantation

Thermal properties of the mixed spin-1 and spin-3/2 Ising ferrimagnetic system with two different random single-ion anisotropies

Science.gov (United States)

Pereira, J. R. V.; Tunes, T. M.; de Arruda, A. S.; Godoy, M.

2018-06-01

In this work, we have performed Monte Carlo simulations to study a mixed spin-1 and spin-3/2 Ising ferrimagnetic system on a square lattice with two different random single-ion anisotropies. This lattice is divided in two interpenetrating sublattices with spins SA = 1 in the sublattice A and SB = 3 / 2 in the sublattice B. The exchange interaction between the spins on the sublattices is antiferromagnetic (J single-ion anisotropies, DiA and DjB , on the sublattices A and B, respectively. We have determined the phase diagram of the model in the critical temperature Tc versus strength of the random single-ion anisotropy D plane and we shown that it exhibits only second-order phase transition lines. We also shown that this system displays compensation temperatures for some cases of the random single-ion distribution.

Diode-like single-ion track membrane prepared by electro-stopping

International Nuclear Information System (INIS)

Apel, P.Yu.; Korchev, Yu.E.; Siwy, Z.; Spohr, R.; Yoshida, M.

2001-01-01

The preparation of an asymmetric membrane in poly(ethylene terephthalate) (PET) is described, using a combination of chemical and electro-stopping. For this purpose, a single-ion-irradiated PET film is inserted into an electrolytic cell and etched from one side in 9 M sodium hydroxide while bathing the other side in a mixture of 2 M KCl and 2 M HCOOH (1:1 by volume), electrically retracting the OH - ions from the tip of the etch pit during pore break-through. When a preset current has been reached, the etch process is interrupted by replacing the etching solution with acidic 1 M potassium chloride solution. After etching, the current-voltage (I-V) characteristic is determined under symmetric bathing conditions, immersing both sides of the membrane in KCl solutions of identical concentration (0.01-1 M) and pH (3-8). The I-V characteristic is strongly non-linear, comparable to that of an electrical diode. If the polarity during etching is reversed, pushing the OH - ions into the tip of the etch pit, the resulting pores are larger and the degree of asymmetry smaller. The importance of electro-stopping is compared with chemical stopping

Event-by-Event Observables and Fluctuations

International Nuclear Information System (INIS)

Petersen, Hannah

2013-01-01

In this talk the status and open questions of the phenomenological description of all the stages of a heavy ion reaction are highlighted. Special emphasis is put on event-by-event fluctuations and associated observables. The first part is concentrated on high RHIC and LHC energies and the second part reviews the challenges for modeling heavy ion reactions at lower beam energies in a more realistic fashion. Overall, the main conclusion is that sophisticated theoretical dynamical approaches that describe many observables in the same framework are essential for the quantitative understanding of the properties of hot and dense nuclear matter

Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

Science.gov (United States)

Kumar, Sunil; Kumar, Ashish; Tripathi, Ambuj; Tyagi, Chetna; Avasthi, D. K.

2018-04-01

In this work, swift heavy ion irradiation induced effects on the electrical properties of single layer graphene are reported. The modulation in minimum conductivity point in graphene with in-situ electrical measurement during ion irradiation was studied. It is found that the resistance of graphene layer decreases at lower fluences up to 3 × 1011 ions/cm2, which is accompanied by the five-fold increase in electron and hole mobilities. The ion irradiation induced increase in electron and hole mobilities at lower fluence up to 1 × 1011 ions/cm2 is verified by separate Hall measurements on another irradiated graphene sample at the selected fluence. In contrast to the adverse effects of irradiation on the electrical properties of materials, we have found improvement in electrical mobility after irradiation. The increment in mobility is explained by considering the defect annealing in graphene after irradiation at a lower fluence regime. The modification in carrier density after irradiation is also observed. Based on findings of the present work, we suggest ion beam irradiation as a useful tool for tuning of the electrical properties of graphene.

Broadband Dielectric Spectroscopy and Quasi-Elastic Neutron Scattering on Single-Ion Polymer Conductors

Science.gov (United States)

Soles, Christopher; Peng, Hua-Gen; Page, Kirt; Snyder, Chad; Pandy, Ashoutosh; Jeong, Youmi; Runt, James; NIST Collaboration; Pennsylvania Collaboration

2011-03-01

The application of solid polymer electrolytes in rechargeable batteries has not been fully realized after decades of research due to its low conductivity. Dramatic increases of the ion conductivity are needed and this progress requires the understanding of conduction mechanism. We address this topic in two fronts, namely, the effect of plasticizer additives and geometric confinement on the charge transfer mechanism. To this end, we combine broadband dielectric spectroscopy (BDS) to characterize the ion mobility and quasi-elastic neutron scattering (QENS) to quantify segmental motion on a single-ion model polymer electrolyte. Deuterated small molecules were used as plasticizers so that the segmental motion of the polymer electrolyte could be monitored by QENS to understand the mechanism behind the increased conductivity. Anodic aluminum oxide (AAO) membranes with well defined channel sizes are used as the matrix to study the transport of ions solvated in a 1D polymer electrolyte.

Single Event Upset Studies Using the ATLAS SCT

CERN Document Server

Weidberg, A R; The ATLAS collaboration

2013-01-01

Single Event Upsets (SEU) are expected to occur during high luminosity running of the ATLAS SemiConductor Tracker (SCT). The SEU cross sections were measured in pion beams with momenta in the range 200 to 465 MeV/c and proton test beams at 24 GeV/c but the extrapolation to LHC conditions is non-trivial because of the range of particle types and momenta. The SEUs studied occur in the \\emph{p-i-n} photodiode and the registers in the ABCD chip. Comparisons between predicted SEU rates and those measured from ATLAS data are presented. The implications for ATLAS operation are discussed.

Sorption of Hg(II and Pb(II Ions on Chitosan-Iron(III from Aqueous Solutions: Single and Binary Systems

Directory of Open Access Journals (Sweden)

Byron Lapo

2018-03-01

Full Text Available The present work describes the study of mercury Hg(II and lead Pb(II removal in single and binary component systems into easily prepared chitosan-iron(III bio-composite beads. Scanning electron microscopy and energy-dispersive X-ray (SEM-EDX analysis, Fourier transform infrared spectroscopy (FTIR, thermogravimetric analysis (TGA and point of zero charge (pHpzc analysis were carried out. The experimental set covered pH study, single and competitive equilibrium, kinetics, chloride and sulfate effects as well as sorption–desorption cycles. In single systems, the Langmuir nonlinear model fitted the experimental data better than the Freundlich and Sips equations. The sorbent material has more affinity to Hg(II rather than Pb(II ions, the maximum sorption capacities were 1.8 mmol·g−1 and 0.56 mmol·g−1 for Hg(II and Pb(II, respectively. The binary systems data were adjusted with competitive Langmuir isotherm model. The presence of sulfate ions in the multicomponent system [Hg(II-Pb(II] had a lesser impact on the sorption efficiency than did chloride ions, however, the presence of chloride ions improves the selectivity towards Hg(II ions. The bio-based material showed good recovery performance of metal ions along three sorption–desorption cycles.

Energy Dispersion in Solar Ion Events over 4 Orders of Magnitude: SOHO/COSTEP and Wind/STICS

Science.gov (United States)

Kunow, Horst W.; Posner, A.

2003-07-01

The ma jority of solar particle events in the COSTEP observational range of 4 75 MeV/n reveals nucleon energy disp ersion (NED), implying a flare-associated particle acceleration mechanism. Towards lower energies, the situation changes somewhat. Only in a minority of solar energetic particle (SEP) events can the effect of NED be followed into the lower keV range. We analyse the reasons for the distinctly different types of particle transport of >10 keV suprathermal up to 100 MeV energetic ions and conclude that the mean free path depends on rigidity.

Electron paramagnetic resonance and optical absorption of uranium ions diluted in CdF2 single crystals

International Nuclear Information System (INIS)

Pereira, J.J.C.R.

1976-08-01

The electron paramagnetic resonance (EPR) has been studied in conection with the optical absortion spectra of Uranium ions diluted in CdF 2 single crystals. Analyses of the EPR and optical absorption spectra obtained experimentally, and a comparison with known results in the isomorfic CaF 2 , SrF 2 and BaF 2 , allowed the identification of two paramagnetic centers associated with Uranium ions. These are the U(2+) ion in cubic symmetry having the triplet γ 5 as ground state, and the U(3+) ion in cubic symmetry having the dublet γ 6 as ground state. (Author) [pt

The GOES-16 Energetic Heavy Ion Sensor (EHIS) Ion Composition and Flux Measurements

Science.gov (United States)

Connell, J. J.; Lopate, C.

2017-12-01

The Energetic Heavy Ion Sensor (EHIS) was built by the University of New Hampshire, subcontracted to Assurance Technology Corporation, as part of the Space Environmental In-Situ Suite (SEISS) on the new GOES-16 satellite (formerly GOES-R) in Geostationary orbit. EHIS measures energetic ions over the range 10-200 MeV for protons, and energy ranges for heavy ions corresponding to the same stopping range (e.g., 19-207 MeV/u for carbon and 38-488 MeV/u for iron). EHIS uses the Angle Detecting Inclined Sensors (ADIS) technique to provide single-element charge resolution. Though on an operational mission for Space Weather monitoring, EHIS can thus provide a new source of high quality Solar Particle Event (SPE) data for science studies. With a high rate of on-board processing ( 2000 events/s), EHIS will provide exceptional statistics for ion composition measurements in large SPEs. For the GOES Level 1-B and Level 2 data products, heavy ions are distinguished in EHIS using pulse-height analysis with on-board processing producing charge histograms for five energy bands. Fits to these data are normalized to priority rate data on the ground. The instrumental cadence for histograms is 1 minute and the primary Level 1-B heavy ion data products are 1-minute and 5-minute averages. We discuss the preliminary EHIS heavy ion data results which show elemental peaks from H to Fe, with peaks for the isotopes D and 3He. (GOES-16 was launched in 19 November, 2016 and data has, though July 2017, been dominated by Galactic Cosmic Rays.) The EHIS instrument development project was funded by NASA under contract NNG06HX01C.

New method for selection and characterization of single-source events in Ni+Ni collisions at 32 A.MeV; Nouvelle methode de selection et caracterisation des evenements monosource dans les collisions Ni+Ni a 32 A.MeV

Energy Technology Data Exchange (ETDEWEB)

Maskay-Wallez, Anne-Marie [Inst. de Physique Nucleaire, Lyon-1 Univ., 69 - Villeurbanne (France)

1999-07-13

The study of heavy ion collisions, with the help of such efficient multi-detectors as INDRA, has shown the persistence of reactions leading to single-source events, up to bombarding energies higher than the Fermi one. These events could help characterizing an expected phase transition in nuclear matter. Whatever interesting they may be, the single-source events correspond to a small part of the total cross section, which makes them difficult to isolate and therefore to analyze. That is why different selection means have been tested - thanks to the 'Simon' event generator - on a simulated Ni + Ni at 32 A{center_dot}MeV sample, before any application to the INDRA experimental data. As the known methods based on global variables did not prove effective, a set of new 4-dimensional quantities has been built, whose main advantage lies in a better description of physical events. From a Discriminant Analysis performed on 625 of these new 'moments' proceeds a highly discriminant variable, called D{sub 625}. The experimental cross section associated with D{sub 625}-selected single-source events amounts to 170 mb at 32 A{center_dot}MeV. Such quasi-fusion events are shown to disappear at about 60 A{center_dot}MeV. As regards the deexcitation mode of the 32 A{center_dot}MeV Ni + Ni single-source events, an extensive experimental study and comparisons of the data with two reference models seem to confirm the hypothesis of a transition between fusion-evaporation and simultaneous multifragmentation mechanisms. (author)

New method for selection and characterization of single-source events in Ni+Ni collisions at 32 A.MeV; Nouvelle methode de selection et caracterisation des evenements monosource dans les collisions Ni+Ni a 32 A.MeV

Energy Technology Data Exchange (ETDEWEB)

Maskay-Wallez, Anne-Marie [Inst. de Physique Nucleaire, Lyon-1 Univ., 69 - Villeurbanne (France)

1999-07-13

The study of heavy ion collisions, with the help of such efficient multi-detectors as INDRA, has shown the persistence of reactions leading to single-source events, up to bombarding energies higher than the Fermi one. These events could help characterizing an expected phase transition in nuclear matter. Whatever interesting they may be, the single-source events correspond to a small part of the total cross section, which makes them difficult to isolate and therefore to analyze. That is why different selection means have been tested - thanks to the 'Simon' event generator - on a simulated Ni + Ni at 32 A{center_dot}MeV sample, before any application to the INDRA experimental data. As the known methods based on global variables did not prove effective, a set of new 4-dimensional quantities has been built, whose main advantage lies in a better description of physical events. From a Discriminant Analysis performed on 625 of these new 'moments' proceeds a highly discriminant variable, called D{sub 625}. The experimental cross section associated with D{sub 625}-selected single-source events amounts to 170 mb at 32 A{center_dot}MeV. Such quasi-fusion events are shown to disappear at about 60 A{center_dot}MeV. As regards the deexcitation mode of the 32 A{center_dot}MeV Ni + Ni single-source events, an extensive experimental study and comparisons of the data with two reference models seem to confirm the hypothesis of a transition between fusion-evaporation and simultaneous multifragmentation mechanisms. (author)

Propensity rules for orientation in singly-charged ion-atom collisions

International Nuclear Information System (INIS)

Nielsen, S.E.; Dubois, A.; Hansen, J.P.

1990-01-01

Orientation effects for electron capture and excitation in singly-charged ion-atom collisions are analysed using the atomic basis impact parameter method with full inclusion of electron translational factors. We find that the orientation preferences previously predicted for excitation in terms of propensity rules may still be observed when capture is present in ion-atom collisions. Furthermore, in spite of intricate behaviour of the direct capture couplings during the collision, we draw some parallel conclusions for the orientation of the capture states. We illustrate these perturbative predictions by close-coupling calculations for H + -Na(3s) collisions where clear propensity for orientation of the H(2p) capture state is demonstrated in impact parameter and velocity dependences. Finally we predict pronounced orientation effects for H(2s) and H(2p) capture in collisions of H + with initially oriented Na(3p) states. (author)

Conductometric Determination of Single Pores in Polyethyleneterephthalate Irradiated by Heavy Ions

CERN Document Server

Oganesyan, V R; Dörschel, B; Vetter, J E; Danziger, M; Hermsdorf, D

2002-01-01

Most of previous works devoted to the problem of track formation processes did not pay enough attention to direct measurement of the appearance of every individual pore in an array of many pores induced by the irradiation of polymer films with ions. Such measurements are not easy to carry out due to the extremely high electric resistance in the moment of pore opening. In this work the analysis of films irradiated with low particle fluences up to 3.7\\cdot 10^{3} ions/cm^2 is described. Polyethyleneterephthalate (PET) Hostaphan with a thickness of 20 m was used. The samples were irradiated with Bi ions of 11.4 MeV/amu energy. Using optimized etching conditions and computer aided data evaluation we obtained results, which are in good agreement with theoretical predictions and model calculations. The measured increase of conductivity beginning from the breakthrough of a single track up to the next pore opening in dependence on the etching time and the number of opened pores confirm the assumed model. Thus, the de...

Conductometric determination of single pores in polyethyleneterephthalate irradiated by heavy ions

CERN Document Server

Oganesyan, V R; Dörschel, B; Hermsdorf, D; Trofimov, V V; Vetter, J

2002-01-01

Most of the previous works devoted to the problem of track formation processes did not pay enough attention to direct measurement of the appearance of every individual pore in an array of many pores induced by the irradiation of polymer films with ions. Such measurements are not easy to carry out due to the extremely high electric resistance in the moment of pore opening. In this work the analysis of films irradiated with low particle fluences up to 3.7 centre dot 10 sup 3 ions/cm sup 2 is described. Polyethyleneterephthalate (PET) Hostaphan with a thickness of 20 mu m was used. The samples were irradiated with Bi ions of 11.4 MeV/amu energy. Using optimized etching conditions and computer aided data evaluation, we obtained results, which are in good agreement with theoretical predictions and model calculations. The measured increase of conductivity beginning from the breakthrough of a single track up to the next pore opening in dependence on the etching time and the number of opened pores confirm the assumed...

Development of the IFJ single ion hit facility for cells irradiation

International Nuclear Information System (INIS)

Veselov, O.; Polak, W.; Ugenskiene, R.; Hajduk, R.; Lebed, K.; Lekki, J.; Horwacik, T.; Dutkiewicz, E.M.; Maranda, S.; Pieprzyca, T.; Sarnecki, C.; Stachura, Z.; Szklarz, Z.; Styczen, J.

2005-12-01

In recent years a single ion hit facility (SIHF) has been constructed at the IFJ ion microprobe. The setup is used for the precise irradiations of living cells by a controlled number of ions. The facility allows investigations in various aspects of biomedical research, such as adaptive response, bystander effect, inverse dose-rate effect, low-dose hypersensitivity, etc. Those investigations have two very important requirements: (i) cells must be examined in their natural state and environment, i.e. without previously being killed, and preferentially, neither fixed nor stained, and (ii) a possibility of automatic irradiation of large number of cells with a computer recognition of their positions must be provided. This work presents some of the crucial features of the off-line and on-line optical systems, including self-developed software responsible for the automatic cell recognition. We also show several tests carried out to determine the efficiency of the whole setup and some segments. In conclusion, the results of our first irradiation measurements performed with living cells are demonstrated. (author)

Effect of 120 MeV Ag{sup 9+} ion irradiation of YCOB single crystals

Energy Technology Data Exchange (ETDEWEB)

Arun Kumar, R., E-mail: rarunpsgtech@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Department of Basic Sciences - Physics Division, PSG College of Technology, Coimbatore 641 004 (India); Dhanasekaran, R. [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

2012-09-15

Single crystals of yttrium calcium oxy borate (YCOB) grown from boron-tri-oxide flux were subjected to swift heavy ion irradiation using silver Ag{sup 9+} ions from the 15 UD Pelletron facility at Inter University Accelerator Center, New Delhi. The crystals were irradiated at 1 Multiplication-Sign 10{sup 13}, 5 Multiplication-Sign 10{sup 13} and 1 Multiplication-Sign 10{sup 14} ions/cm{sup 2} fluences at room temperature and with 5 Multiplication-Sign 10{sup 13} ions/cm{sup 2} fluence at liquid nitrogen temperature. The pristine and the irradiated samples were characterized by glancing angle X-ray diffraction, UV-Vis-NIR and photoluminescence studies. From the characterization studies performed on the samples, it is inferred that the crystals irradiated at liquid nitrogen temperature had fewer defects compared to the crystals irradiated at room temperature and the defects increased when the ion fluence was increased at room temperature.

Quantum Heisenberg antiferromagnetic chains with exchange and single-ion anisotropies

International Nuclear Information System (INIS)

Peters, D; Selke, W; McCulloch, I P

2010-01-01

Using density matrix renormalization group calculations, ground state properties of the spin-1 Heisenberg chain with exchange and quadratic single-ion anisotropies in an external field are studied, for special choices of the two kinds of anisotropies. In particular, the phase diagram includes antiferromagnetic, spin-liquid (or spin-flop), IS2, and supersolid (or biconical) phases. Especially, new features of the spin-liquid and supersolid phases are discussed. Properties of the quantum chains are compared to those of corresponding classical spin chains.

Effective tuning of the ratio of red to green emission of Ho{sup 3+} ions in single LiLuF{sub 4} microparticle via codoping Ce{sup 3+} ions

Energy Technology Data Exchange (ETDEWEB)

Gao, Wei, E-mail: gaowei@xupt.edu.cn; Dong, Jun; Liu, Jihong; Yan, Xuewen

2016-09-15

Yb{sup 3+}/Ho{sup 3+} codoped LiLuF{sub 4} microparticles have been successfully prepared via a facile hydrothermal method. The crystal phase and morphology of LiLuF{sub 4} microparticles were inspected by x-ray diffraction and scanning electron microscope, respectively. The upconversion emission of single LiLuF{sub 4}: Yb{sup 3+}/Ho{sup 3+} microparticle was carefully studied by a confocal microscopy setup under NIR 980 nm excitation. With the increase of Ce{sup 3+} ion concentrations of 12%, the ratio of red to green emission of the Ho{sup 3+} ions of single LiLuF{sub 4} microparticle was boosted about 17-fold, and the output colors were tuned from green to red, which is due to the two efficient cross-relaxation between Ho{sup 3+} and Ce{sup 3+} ions enhances the red and suppresses the green in the emission processes. To investigate the optical properties of the single microparticle or nanoparticle through the confocal microscopy setup can effectively avoid the influence of surrounding particle or environment, and could provide more precise information for better exploring the emission mechanisms of rare earth ions. The tunable upconversion emission of Ho{sup 3+} in single LiLuF{sub 4} microparticle in this work will have great potential applications in the micro optoelectronic devices and color display applications. - Highlights: • The optical properties of the single LiLuF4: Yb3+/Ho3+/Ce3+ microparticle were studied. • The output colors of single LiLuF4 microparticle were tuned from green to red. • The upconversion mechanisms between Ho3+ and Ce3+ ions were discussed based on emission spectrum.

Time resolved ion beam induced charge collection

International Nuclear Information System (INIS)

Sexton W, Frederick; Walsh S, David; Doyle L, Barney; Dodd E, Paul

2000-01-01

Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a -.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients

Time resolved ion beam induced charge collection

Energy Technology Data Exchange (ETDEWEB)

SEXTON,FREDERICK W.; WALSH,DAVID S.; DOYLE,BARNEY L.; DODD,PAUL E.

2000-04-01

Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a {minus}.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients.

Shot-noise-limited monitoring and phase locking of the motion of a single trapped ion.

Science.gov (United States)

Bushev, P; Hétet, G; Slodička, L; Rotter, D; Wilson, M A; Schmidt-Kaler, F; Eschner, J; Blatt, R

2013-03-29

We perform a high-resolution real-time readout of the motion of a single trapped and laser-cooled Ba+ ion. By using an interferometric setup, we demonstrate a shot-noise-limited measurement of thermal oscillations with a resolution of 4 times the standard quantum limit. We apply the real-time monitoring for phase control of the ion motion through a feedback loop, suppressing the photon recoil-induced phase diffusion. Because of the spectral narrowing in the phase-locked mode, the coherent ion oscillation is measured with a resolution of about 0.3 times the standard quantum limit.

Self-supporting film method of silicon single crystal by ion implantation and it`s application

Energy Technology Data Exchange (ETDEWEB)

Saito, Kazuo; Nakao, Setsuo; Niwa, Hiroaki; Miyagawa, Soji [National Industrial Research Inst. of Nagoya (Japan)

1996-12-01

A few {mu}m of thickness of self-supporting film of silicon single crystal was produced by the ion implantation and the selective etching. This materials are distinguished by a uniform film thickness, good controllability, crystallization and the mechanical strength. For applying it to device, the detailed process has to be established, because there are some improved problems such as pinhole and morphology on the surface. This materials are very useful to the basic experiment of the base for epitaxial growth under irradiation of ion beams and the ion beam analysis in the atmosphere. (S.Y.)

Low-altitude ion heating with downflowing and upflowing ions

Science.gov (United States)

Shen, Y.; Knudsen, D. J.; Burchill, J. K.; Howarth, A. D.; Yau, A. W.; James, G.; Miles, D.; Cogger, L. L.; Perry, G. W.

2017-12-01

Mechanisms that energize ions at the initial stage of ion upflow are still not well understood. We statistically investigate ionospheric ion energization and field-aligned motion at very low altitudes (330-730 km) using simultaneous plasma, magnetic field, wave electric field and optical data from the e-POP satellite. The high-time-resolution (10 ms) dataset enables us to study the micro-structures of ion heating and field-aligned ion motion. The ion temperature and field-aligned bulk flow velocity are derived from 2-D ion distribution functions measured by the SEI instrument. From March 2015 to March 2016, we've found 17 orbits (in total 24 ion heating periods) with clear ion heating signatures passing across the dayside cleft or the nightside auroral regions. Most of these events have consistent ion heating and flow velocity characteristics observed from both the SEI and IRM instruments. The perpendicular ion temperature goes up to 4.5 eV within a 2 km-wide region in some cases, in which the Radio Receiver Instrument (RRI) sees broadband extremely low frequency (BBELF) waves, demonstrating significant wave-ion heating down to as low as 350 km. The e-POP Fast Auroral Imager (FAI) and Magnetic Field (MGF) instruments show that many events are associated with active aurora and are within downward current regions. Contrary to what would be expected from mirror-force acceleration of heated ions, the majority of these heating events (17 out of 24) are associated with the core ion downflow rather than upflow. These statistical results provide us with new sights into ion heating and field-aligned flow processes at very low altitudes.

The nature of single-ion activity coefficients calculated from potentiometric measurements on cells with liquid junctions

Energy Technology Data Exchange (ETDEWEB)

Zarubin, Dmitri P., E-mail: dmitri.zarubin@mtu-net.ru [Department of Physical and Collod Chemistry, Moscow State University of Technology and Management, 73 Zemlyanoi Val, Moscow 109803 (Russian Federation)

2011-08-15

Highlights: > Problem of ionic activity coefficients, determined by potentiometry, is reconsidered. > They are found to be functions of mean activity coefficients and transport numbers of ions. > The finding is verified by calculations and comparing the results with reported data. > Calculations are performed for systems with single electrolytes and binary mixtures. - Abstract: Potentiometric measurements on cells with liquid junctions are sometimes used for calculations of single-ion activity coefficients in electrolyte solutions, the incidence of this being increased recently. As surmised by Guggenheim in the 1930s, such coefficients (of ions i), {gamma}{sub i}, are actually complicated functions of mean ionic activity coefficients, {gamma}{sub {+-}}, and transport numbers of ions, t{sub i}. In the present paper specific functions {gamma}{sub i}({gamma}{sub {+-}}, t{sub i}) are derived for a number of cell types with an arbitrary mixture of strong electrolytes in a one-component solvent in the liquid-junction system. The cell types include cells with (i) identical electrodes, (ii) dissimilar electrodes reversible to the same ions, (iii) dissimilar electrodes reversible to ions of opposite charge signs, (iv) dissimilar electrodes reversible to different ions of the same charge sign, and (v) identical reference electrodes and an ion-selective membrane permeable to ions of only one type. Pairs of functions for oppositely charged ions are found to be consistent with the mean ionic activity coefficients as would be expected for pairs of the proper {gamma}{sub i} quantities by definition of {gamma}{sub {+-}}. The functions are tested numerically on some of the reported {gamma}{sub i} datasets that are the more tractable. A generally good agreement is found with data reported for cells with single electrolytes HCl and KCl in solutions, and with binary mixtures in the liquid-junction systems of KCl from the reference solutions and NaCl and HCl from the test solutions. It

Polarization bremsstrahlung of a hydrogen-like ion in a single crystal

International Nuclear Information System (INIS)

Astapenko, V. A.

2009-01-01

Polarization bremsstrahlung (PB) that arises when a fast hydrogen-like ion is scattered in a single crystal is investigated theoretically. Four types of the process are analyzed that are caused by virtual excitation of electrons of the target and of the incident particle (IP), as well as by a coherent and incoherent interaction between the IP and the single crystal. The spectral, angular, and velocity (of the IP) characteristics of PB are calculated with regard to the spectral function of a photodetector. Optimal observation conditions and regions in which different types of PB are dominant are determined, and the dependence of these regions on the charge of the IP nucleus and of the target atoms is revealed

First nondestructive measurements of power MOSFET single event burnout cross sections

International Nuclear Information System (INIS)

Oberg, D.L.; Wert, J.L.

1987-01-01

A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities. The nondestructive technique and data for various device types taken at several accelerators, including the LBL Bevalac, are documented. Several new phenomena are observed

Event-by-Event Elliptic Flow Fluctuations from PHOBOS

Science.gov (United States)

Wosiek, B.; Alver, B.; Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Chai, Z.; Chetluru, V.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Halliwell, C.; Hamblen, J.; Harnarine, I.; Hauer, M.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Li, W.; Lin, W. T.; Loizides, C.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Reed, C.; Richardson, E.; Roland, C.; Roland, G.; Sagerer, J.; Seals, H.; Sedykh, I.; Smith, C. E.; Stankiewicz, M. A.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Szostak, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Vaurynovich, S. S.; Verdier, R.; Veres, G. I.; Walters, P.; Wenger, E.; Willhelm, D.; Wolfs, F. L. H.; Woźniak, K.; Wyngaardt, S.; Wysłouch, B.

2009-04-01

Recently PHOBOS has focused on the study of fluctuations and correlations in particle production in heavy-ion collisions at the highest energies delivered by the Relativistic Heavy Ion Collider (RHIC). In this report, we present results on event-by-event elliptic flow fluctuations in (Au+Au) collisions at sqrt {sNN}=200 GeV. A data-driven method was used to estimate the dominant contribution from non-flow correlations. Over the broad range of collision centralities, the observed large elliptic flow fluctuations are in agreement with the fluctuations in the initial source eccentricity.

Soft error rate analysis methodology of multi-Pulse-single-event transients

International Nuclear Information System (INIS)

Zhou Bin; Huo Mingxue; Xiao Liyi

2012-01-01

As transistor feature size scales down, soft errors in combinational logic because of high-energy particle radiation is gaining more and more concerns. In this paper, a combinational logic soft error analysis methodology considering multi-pulse-single-event transients (MPSETs) and re-convergence with multi transient pulses is proposed. In the proposed approach, the voltage pulse produced at the standard cell output is approximated by a triangle waveform, and characterized by three parameters: pulse width, the transition time of the first edge, and the transition time of the second edge. As for the pulse with the amplitude being smaller than the supply voltage, the edge extension technique is proposed. Moreover, an efficient electrical masking model comprehensively considering transition time, delay, width and amplitude is proposed, and an approach using the transition times of two edges and pulse width to compute the amplitude of pulse is proposed. Finally, our proposed firstly-independently-propagating-secondly-mutually-interacting (FIP-SMI) is used to deal with more practical re-convergence gate with multi transient pulses. As for MPSETs, a random generation model of MPSETs is exploratively proposed. Compared to the estimates obtained using circuit level simulations by HSpice, our proposed soft error rate analysis algorithm has 10% errors in SER estimation with speed up of 300 when the single-pulse-single-event transient (SPSET) is considered. We have also demonstrated the runtime and SER decrease with the increment of P0 using designs from the ISCAS-85 benchmarks. (authors)

Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs

International Nuclear Information System (INIS)

Titus, J.L.; Wheatley, C.F.; Allenspach, M.; Schrimpf, R.D.; Brews, J.R.; Galloway, K.F.; Burton, D.I.; Pease, R.L.

1996-01-01

For the first time, experimental observations and numerical simulations show that the impact energy of the test ion influences the single-event gate rupture (SEGR) failure thresholds of vertical power MOSFETs. Current testing methodology may produce false hardness assurance

Systems and Methods for Ejection of Ions from an Ion Trap

Science.gov (United States)

Cooks, Robert Graham (Inventor); Snyder, Dalton (Inventor)

2018-01-01

The invention generally relates to systems and methods for ejection of ions from an ion trap. In certain embodiments, systems and methods of the invention sum two different frequency signals into a single summed signal that is applied to an ion trap. In other embodiments, an amplitude of a single frequency signal is modulated as the single frequency signal is being applied to the ion trap. In other embodiments, a first alternating current (AC) signal is applied to an ion trap that varies as a function of time, while a constant radio frequency (RF) signal is applied to the ion trap.

EUCAARI ion spectrometer measurements at 12 European sites – analysis of new particle formation events

Directory of Open Access Journals (Sweden)

H. E. Manninen

2010-08-01

Full Text Available We present comprehensive results on continuous atmospheric cluster and particle measurements in the size range ~1–42 nm within the European Integrated project on Aerosol Cloud Climate and Air Quality interactions (EUCAARI project. We focused on characterizing the spatial and temporal variation of new particle formation events and relevant particle formation parameters across Europe. Different types of air ion and cluster mobility spectrometers were deployed at 12 field sites across Europe from March 2008 to May 2009. The measurements were conducted in a wide variety of environments, including coastal and continental locations as well as sites at different altitudes (both in the boundary layer and the free troposphere. New particle formation events were detected at all of the 12 field sites during the year-long measurement period. From the data, nucleation and growth rates of newly formed particles were determined for each environment. In a case of parallel ion and neutral cluster measurements, we could also estimate the relative contribution of ion-induced and neutral nucleation to the total particle formation. The formation rates of charged particles at 2 nm accounted for 1–30% of the corresponding total particle formation rates. As a significant new result, we found out that the total particle formation rate varied much more between the different sites than the formation rate of charged particles. This work presents, so far, the most comprehensive effort to experimentally characterize nucleation and growth of atmospheric molecular clusters and nanoparticles at ground-based observation sites on a continental scale.

Analysis of cosmic ray neutron-induced single-event phenomena

International Nuclear Information System (INIS)

Tukamoto, Yasuyuki; Watanabe, Yukinobu; Nakashima, Hideki

2003-01-01

We have developed a database of cross sections for the n+ 28 Si reaction in the energy range between 2 MeV and 3 GeV in order to analyze single-event upset (SEU) phenomena induced by cosmic-ray neutrons in semiconductor memory devices. The data are applied to calculations of SEU cross sections using the Burst Generation Rate (BGR) model including two parameters, critical charge and effective depth. The calculated results are compared with measured SEU cross-sections for energies up to 160 MeV, and the reaction products that provide important effects on SEU are mainly investigated. (author)

Device simulation of charge collection and single-event upset

International Nuclear Information System (INIS)

Dodd, P.E.

1996-01-01

In this paper the author reviews the current status of device simulation of ionizing-radiation-induced charge collection and single-event upset (SEU), with an emphasis on significant results of recent years. The author presents an overview of device-modeling techniques applicable to the SEU problem and the unique challenges this task presents to the device modeler. He examines unloaded simulations of radiation-induced charge collection in simple p/n diodes, SEU in dynamic random access memories (DRAM's), and SEU in static random access memories (SRAM's). The author concludes with a few thoughts on future issues likely to confront the SEU device modeler

Time resolved energy spectrum of the axial ion beam generated in plasma focus discharges

International Nuclear Information System (INIS)

Bostick, W.H.; Kilic, H.; Nardi, V.; Powell, C.W.

1993-01-01

The energy spectrum of the deuteron beam along the electrode axis (0 (degree) ) in a plasma focus discharge has been determined with a time of flight (TOF) method and with a differential filter method in the ion energy interval E = 0.3-9 MeV. The ion TOF method is applied to single-ion pulse events with an ion emission time t(E) that is only weakly dependent on the ion energy E for E > 0.3 MeV. The correlation of the ion beam intensity with the filling pressure, the neutron yield and the hard X-ray intensity is also reported. (author). 11 refs, 10 figs

Calculation of cosmic ray induced single event upsets: Program CRUP (Cosmic Ray Upset Program)

Science.gov (United States)

Shapiro, P.

1983-09-01

This report documents PROGRAM CRUP, COSMIC RAY UPSET PROGRAM. The computer program calculates cosmic ray induced single-event error rates in microelectronic circuits exposed to several representative cosmic-ray environments.

Kernel PLS Estimation of Single-trial Event-related Potentials

Science.gov (United States)

Rosipal, Roman; Trejo, Leonard J.

2004-01-01

Nonlinear kernel partial least squaes (KPLS) regressior, is a novel smoothing approach to nonparametric regression curve fitting. We have developed a KPLS approach to the estimation of single-trial event related potentials (ERPs). For improved accuracy of estimation, we also developed a local KPLS method for situations in which there exists prior knowledge about the approximate latency of individual ERP components. To assess the utility of the KPLS approach, we compared non-local KPLS and local KPLS smoothing with other nonparametric signal processing and smoothing methods. In particular, we examined wavelet denoising, smoothing splines, and localized smoothing splines. We applied these methods to the estimation of simulated mixtures of human ERPs and ongoing electroencephalogram (EEG) activity using a dipole simulator (BESA). In this scenario we considered ongoing EEG to represent spatially and temporally correlated noise added to the ERPs. This simulation provided a reasonable but simplified model of real-world ERP measurements. For estimation of the simulated single-trial ERPs, local KPLS provided a level of accuracy that was comparable with or better than the other methods. We also applied the local KPLS method to the estimation of human ERPs recorded in an experiment on co,onitive fatigue. For these data, the local KPLS method provided a clear improvement in visualization of single-trial ERPs as well as their averages. The local KPLS method may serve as a new alternative to the estimation of single-trial ERPs and improvement of ERP averages.

Analysis of Central Events in the Interactions of Relativistic Heavy Ions with Emulsion Nuclei at 118.4 GeV

International Nuclear Information System (INIS)

EL-Falaky, E.

2007-01-01

Data on the multiplicity of the secondary produced particles in the central events from the interactions of 32S with AgBr nuclei at 118.4 GeV. A different selection criteria of the central collision in heavy ion interactions was investigated. The multiplicity distributions of the different produced shower particles (mainly pions) in the central events for each criteria was studied. The multiplicity distributions of the target fragments emitted in the central events was fitted by a Gaussian distribution. The target analysis of the experimental data shows agreement with the limiting fragmentation hypothesis

A Nanophase-Separated, Quasi-Solid-State Polymeric Single-Ion Conductor: Polysulfide Exclusion for Lithium–Sulfur Batteries

Energy Technology Data Exchange (ETDEWEB)

Lee, Jinhong; Song, Jongchan; Lee, Hongkyung; Noh, Hyungjun; Kim, Yun-Jung; Kwon, Sung Hyun; Lee, Seung Geol; Kim, Hee-Tak

2017-04-19

Formation of soluble polysulfide (PS), which is a key feature of lithium sulfur (Li–S) batteries, provides a fast redox kinetic based on a liquid–solid mechanism; however, it imposes the critical problem of PS shuttle. Here, we address the dilemma by exploiting a solvent-swollen polymeric single-ion conductor (SPSIC) as the electrolyte medium of the Li–S battery. The SPSIC consisting of a polymeric single-ion conductor and lithium salt-free organic solvents provides Li ion hopping by forming a nanoscale conducting channel and suppresses PS shuttle according to the Donnan exclusion principle when being employed for Li–S batteries. The organic solvents at the interface of the sulfur/carbon composite and SPSIC eliminate the poor interfacial contact and function as a soluble PS reservoir for maintaining the liquid–solid mechanism. Furthermore, the quasi-solid-state SPSIC allows the fabrication of a bipolar-type stack, which promises the realization of a high-voltage and energy-dense Li–S battery.

Single-crate stand-alone CAMAC control system for a negative ion source test facility

International Nuclear Information System (INIS)

Juras, R.C.; Ziegler, N.F.

1979-01-01

A single-crate CAMAC system was configured to control a negative ion source development facility at ORNL and control software was written for the crate microcomputer. The software uses inputs from a touch panel and a shaft encoder to control the various operating parameters of the test facility and uses the touch panel to display the operating status. Communication to and from the equipment at ion source potential is accomplished over optical fibers from an ORNL-built CAMAC module. A receiver at ion source potential stores the transmitted data and some of these stored values are then used to control discrete parameters of the ion source (i.e., power supply on or off). Other stored values are sent to a multiplexed digital-to-analog converter to provide analog control signals. A transmitter at ion source potential transmits discrete status information and several channels of analog data from an analog-to-digital converter back to the ground-potential receiver where it is stored to be read and displayed by the software

Novel single-cell mega-size chambers for electrochemical etching of panorama position-sensitive polycarbonate ion image detectors

Science.gov (United States)

Sohrabi, Mehdi

2017-11-01

A novel development is made here by inventing panorama single-cell mega-size electrochemical etching (MS-ECE) chamber systems for processing panorama position-sensitive mega-size polycarbonate ion image detectors (MS-PCIDs) of potential for many neutron and ion detection applications in particular hydrogen ions or proton tracks and images detected for the first time in polycarbonates in this study. The MS-PCID is simply a large polycarbonate sheet of a desired size. The single-cell MS-ECE invented consists of two large equally sized transparent Plexiglas sheets as chamber walls holding a MS-PCID and the ECE chamber components tightly together. One wall has a large flat stainless steel electrode (dry cell) attached to it which is directly in contact with the MS-PCID and the other wall has a rod electrode with two holes to facilitate feeding and draining out the etching solution from the wet cell. A silicon rubber washer plays the role of the wet cell to hold the etchant and the electrical insulator to isolate the dry cell from the wet cell. A simple 50 Hz-HV home-made generator provides an adequate field strength through the two electrodes across the MS-ECE chamber. Two panorama single-cell MS-ECE chamber systems (circular and rectangular shapes) constructed were efficiently applied to processing the MS-PCIDs for 4π ion emission image detection of different gases in particular hydrogen ions or protons in a 3.5 kJ plasma focus device (PFD as uniquely observed by the unaided eyes). The panorama MS-PCID/MS-ECE image detection systems invented are novel with high potential for many applications in particular as applied to 4π panorama ion emission angular distribution image detection studies in PFD space, some results of which are presented and discussed.

Conductometric determination of single pores in polyethyleneterephthalate irradiated by heavy ions

International Nuclear Information System (INIS)

Oganesyan, V.R.; Trofimov, V.V.; Doerschel, B.; Hermsdorf, D.; Vetter, J.; Danziger, M.

2002-01-01

Most of the previous works devoted to the problem of track formation processes did not pay enough attention to direct measurement of the appearance of every individual pore in an array of many pores induced by the irradiation of polymer films with ions. Such measurements are not easy to carry out due to the extremely high electric resistance in the moment of pore opening. In this work the analysis of films irradiated with low particle fluences up to 3.7·10 3 ions/cm 2 is described. Polyethyleneterephthalate (PET) Hostaphan with a thickness of 20μm was used. The samples were irradiated with Bi ions of 11.4 MeV/amu energy. Using optimized etching conditions and computer aided data evaluation, we obtained results, which are in good agreement with theoretical predictions and model calculations. The measured increase of conductivity beginning from the breakthrough of a single track up to the next pore opening in dependence on the etching time and the number of opened pores confirm the assumed model. Thus, the developed 'track-by-track' method can be used effectively for description of the sequential appearance of individual pores in an electrolytic etching process

Parasitic bipolar amplification in a single event transient and its temperature dependence

International Nuclear Information System (INIS)

Liu Zheng; Chen Shu-Ming; Chen Jian-Jun; Qin Jun-Rui; Liu Rong-Rong

2012-01-01

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor

Event-shape-engineering study of charge separation in heavy-ion collisions

Science.gov (United States)

Wen, Fufang; Bryon, Jacob; Wen, Liwen; Wang, Gang

2018-01-01

Recent measurements of charge-dependent azimuthal correlations in high-energy heavy-ion collisions have indicated charge-separation signals perpendicular to the reaction plane, and have been related to the chiral magnetic effect (CME). However, the correlation signal is contaminated with the background caused by the collective motion (flow) of the collision system, and an effective approach is needed to remove the flow background from the correlation. We present a method study with simplified Monte Carlo simulations and a multi-phase transport model, and develop a scheme to reveal the true CME signal via event-shape engineering with the flow vector of the particles of interest. Supported by a grant (DE-FG02-88ER40424) from U.S. Department of Energy, Office of Nuclear Physics

Heisenberg magnetic chain with single-ion easy-plane anisotropy: Hubbard operators approach

International Nuclear Information System (INIS)

Spirin, D.V.; Fridman, Y.A.

2003-01-01

We investigate the gap in excitation spectrum of one-dimensional S=1 ferro- and antiferromagnets with easy-plane single-ion anisotropy. The self-consistent modification of Hubbard operators approach which enables to account single-site term exactly is used. For antiferromagnetic model we found Haldane phase that exists up to point D=4J (where D is anisotropy parameter, J is exchange coupling), while quadrupolar phase realizes at larger values of anisotropy. Our results specify those of Golinelli et al. (Phys. Rev. B. 45 (1992) 9798), where similar model was studied. Besides the method gives gap value closer to numerical estimations than usual spin-wave theories

Direct determination of recoil ion detection efficiency for coincidence time-of-flight studies of molecular fragmentation

International Nuclear Information System (INIS)

Ben-Itzhak, I.; Carnes, K.D.; Ginther, S.G.; Johnson, D.T.; Norris, P.J.; Weaver, O.L.

1993-01-01

Molecular fragmentation of diatomic and small polyatomic molecules caused by fast ion impact has been studied. The evaluation of the cross sections of the different fragmentation channels depends strongly on the recoil ion detection efficiency, ε r (single ions proportional to ε r , and ion pairs to ε 2 r , etc.). A method is suggested for the direct determination of this detection efficiency. This method is based on the fact that fast H + + CH 4 collisions produce C 2+ fragments only in coincidence with H + and H + 2 fragments, that is, there is a negligible number of C 2+ singles, if any. The measured yield of C 2+ singles is therefore due to events in which the H + m of the H + m + C 2+ ion pair was not detected and thus is proportional to 1 - ε r . Methane fragmentation caused by 1 MeV proton impact is used to evaluate directly the recoil ion detection efficiency and to demonstrate the method of deriving the cross sections of all breakup channels. (orig.)

Multiparticle 3D imaging technique to study the structure of molecular ions

International Nuclear Information System (INIS)

Koenig, W.; Faibis, A.; Kanter, E.P.; Vager, Z.; Zabransky, B.J.

1984-01-01

When energetic molecular ions (E/sub ion/ = 0.1 to 0.5 MeV/amu) pass through thin solid targets a Coulomb explosion ensues due to the rapid (approx. 10 -17 s) stripping of the valence electrons. This process has been successfully used to derive stereochemical information on diatomic and on selected triatomic ions. In order to investigate more complex molecular ions as well as to obtain more accurate and detailed structure information, a large area, multiparticle, position- and time-sensitive detector has been developed to detect all atomic fragments in coincidence. The requirement of multiparticle detection independent of the relative particle positions leads to a rather complex data-readout and -reduction system containing approx. 650 analog-to-digital conversions per event. The system relies heavily on techniques developed for high energy physics experiments during recent years. The single event resolution of the apparatus with respect to bond-lengths and -angles has been studied by Monte Carlo simulations and is typically a few percent

Establishing a Quantitative Relationship Between Ion and Pulsed-Laser Induced Single Event Soft Errors in Advanced Semiconductor Devices

Data.gov (United States)

National Aeronautics and Space Administration — Radiation is a pervasive environmental challenge in space and the upper atmosphere. Ions can interact with microelectronic devices and create unwanted charge leading...

Modification of mechanical properties of single crystal aluminum oxide by ion beam induced structural changes

International Nuclear Information System (INIS)

Ensinger, W.; Nowak, R.; Horino, Y.; Baba, K.

1993-01-01

The mechanical behaviour of ceramics is essentially determined by their surface qualities. As a surface modification technique, ion implantation provides the possibility to modify the mechanical properties of ceramics. Highly energetic ions are implanted into the near-surface region of a material and modify its composition and structure. Ions of aluminum, oxygen, nickel and tantalum were implanted into single-crystal α-aluminum oxide. Three-point bending tests showed that an increase in flexural strength of up to 30% could be obtained after implantation of aluminum and oxygen. Nickel and tantalum ion implantation increased the fracture toughness. Indentation tests with Knoop and Vickers diamonds and comparison of the lengths of the developed radial cracks showed that ion implantation leads to a reaction in cracking. The observed effects are assigned to radiation induced structural changes of the ceramic. Ion bombardment leads to radiation damage and formation of compressive stress. In case of tantalum implantation, the implanted near-surface zone becomes amorphous. These effects make the ceramic more resistant to fracture. (orig.)

Measuring kinetics of complex single ion channel data using mean-variance histograms.

Science.gov (United States)

Patlak, J B

1993-07-01

The measurement of single ion channel kinetics is difficult when those channels exhibit subconductance events. When the kinetics are fast, and when the current magnitudes are small, as is the case for Na+, Ca2+, and some K+ channels, these difficulties can lead to serious errors in the estimation of channel kinetics. I present here a method, based on the construction and analysis of mean-variance histograms, that can overcome these problems. A mean-variance histogram is constructed by calculating the mean current and the current variance within a brief "window" (a set of N consecutive data samples) superimposed on the digitized raw channel data. Systematic movement of this window over the data produces large numbers of mean-variance pairs which can be assembled into a two-dimensional histogram. Defined current levels (open, closed, or sublevel) appear in such plots as low variance regions. The total number of events in such low variance regions is estimated by curve fitting and plotted as a function of window width. This function decreases with the same time constants as the original dwell time probability distribution for each of the regions. The method can therefore be used: 1) to present a qualitative summary of the single channel data from which the signal-to-noise ratio, open channel noise, steadiness of the baseline, and number of conductance levels can be quickly determined; 2) to quantify the dwell time distribution in each of the levels exhibited. In this paper I present the analysis of a Na+ channel recording that had a number of complexities. The signal-to-noise ratio was only about 8 for the main open state, open channel noise, and fast flickers to other states were present, as were a substantial number of subconductance states. "Standard" half-amplitude threshold analysis of these data produce open and closed time histograms that were well fitted by the sum of two exponentials, but with apparently erroneous time constants, whereas the mean

An efficient single-step scheme for manipulating quantum information of two trapped ions beyond the Lamb-Dicke limit

International Nuclear Information System (INIS)

Wei, L.F.; Nori, Franco

2003-01-01

Based on the exact conditional quantum dynamics for a two-ion system, we propose an efficient single-step scheme for coherently manipulating quantum information of two trapped cold ions by using a pair of synchronous laser pulses. Neither the auxiliary atomic level nor the Lamb-Dicke approximation are needed

Characterization of microdose damage caused by single heavy ion observed in trench type power MOSFETs

International Nuclear Information System (INIS)

Ikeda, Naomi; Kuboyama, Satoshi; Maru, Akifumi; Tamura, Takashi; Hirao, Toshio; Abe, Hiroshi

2010-01-01

It was demonstrated that anomalously large degradation observed in power MOSFETs was caused by a single heavy ion. It was identified as a microdose effect and successfully characterized by several parameters extracted from experimental data. (author)

IBIC characterisation of novel detectors for single atom doping of quantum computer devices

International Nuclear Information System (INIS)

Yang Changyi; Jamieson, David N.; Pakes, Chris I.; George, Damien P.; Hearne, Sean M.; Dzurak, Andrew S.; Gauja, Eric; Stanley, F.; Clark, R.G.

2003-01-01

Single ion implantation and online detection is highly desirable for the emerging application, in which single 31 P ions need to be inserted in prefabricated silicon cells to construct solid-state quantum bits (qubits). In order to fabricate qubit arrays, we have developed novel detectors that employ detector electrodes adjacent to the prefabricated cells that can detect single keV ion strikes appropriate for the fabrication of shallow phosphorus arrays. The method utilises a high purity silicon substrate with very high resistivity, a thin SiO 2 surface layer, nanometer masks for the lateral positioning single phosphorus implantation, biased electrodes applied to the surface of the silicon and sensitive electronics that can detect the charge transient from single keV ion strikes. A TCAD (Technology Computer Aided Design) software package was applied in the optimisation of the device design and simulation of the detector performance. Here we show the characterisation of these detectors using ion beam induced charge (IBIC) with a focused 2 MeV He ions in a nuclear microprobe. The IBIC imaging method in a nuclear microprobe allowed us to measure the dead-layer thickness of the detector structure (required to be very thin for successful detection of keV ions), and the spatial distribution of the charge collection efficiency around the entire region of the detector. We show that our detectors have near 100% charge collection efficiency for MeV ions, extremely thin dead-layer thickness (about 7 nm) and a wide active region extending laterally from the electrodes (10-20 μm) where qubit arrays can be constructed. We demonstrate that the device can be successfully applied in the detection of keV ionisation energy from single events of keV X-rays and keV 31 P ions

IBIC characterisation of novel detectors for single atom doping of quantum computer devices

Energy Technology Data Exchange (ETDEWEB)

Yang Changyi E-mail: cjy@physics.unimelb.edu.auc.yang@physics.unimelb.edu.au; Jamieson, David N.; Pakes, Chris I.; George, Damien P.; Hearne, Sean M.; Dzurak, Andrew S.; Gauja, Eric; Stanley, F.; Clark, R.G

2003-09-01

Single ion implantation and online detection is highly desirable for the emerging application, in which single {sup 31}P ions need to be inserted in prefabricated silicon cells to construct solid-state quantum bits (qubits). In order to fabricate qubit arrays, we have developed novel detectors that employ detector electrodes adjacent to the prefabricated cells that can detect single keV ion strikes appropriate for the fabrication of shallow phosphorus arrays. The method utilises a high purity silicon substrate with very high resistivity, a thin SiO{sub 2} surface layer, nanometer masks for the lateral positioning single phosphorus implantation, biased electrodes applied to the surface of the silicon and sensitive electronics that can detect the charge transient from single keV ion strikes. A TCAD (Technology Computer Aided Design) software package was applied in the optimisation of the device design and simulation of the detector performance. Here we show the characterisation of these detectors using ion beam induced charge (IBIC) with a focused 2 MeV He ions in a nuclear microprobe. The IBIC imaging method in a nuclear microprobe allowed us to measure the dead-layer thickness of the detector structure (required to be very thin for successful detection of keV ions), and the spatial distribution of the charge collection efficiency around the entire region of the detector. We show that our detectors have near 100% charge collection efficiency for MeV ions, extremely thin dead-layer thickness (about 7 nm) and a wide active region extending laterally from the electrodes (10-20 {mu}m) where qubit arrays can be constructed. We demonstrate that the device can be successfully applied in the detection of keV ionisation energy from single events of keV X-rays and keV {sup 31}P ions.

Event Generators for Simulating Heavy Ion Interactions of Interest in Evaluating Risks in Human Spaceflight

Science.gov (United States)

Wilson, Thomas L.; Pinsky, Lawrence; Andersen, Victor; Empl, Anton; Lee, Kerry; Smirmov, Georgi; Zapp, Neal; Ferrari, Alfredo; Tsoulou, Katerina; Roesler, Stefan;

Considerations for the Thermal Modeling of Lithium-Ion Cells for Battery Analysis

DEFF Research Database (Denmark)

Rickman, Steven L.; Christie, Robert J.; White, Ralph E.

Recent well-publicized events involving lithium-ion batteries in laptops, electric cars, commercial aircraft and even hover boards have raised concerns regarding thermal runaway -- a phenomenon in which stored energy in a cell is rapidly released as heat along with vented effluents. If not properly...... managed, testing has shown that thermal runaway in a single cell can propagate to other cells in a battery and may lead to a potentially catastrophic event. Lithium-ion batteries are becoming more widely used in a number of human-rated extravehicular activity (EVA) space applications on the International...... Space Station. Thermal modeling in support of thermal runaway propagation mitigation in the Lithium-ion Rechargeable EVA Battery Assembly (LREBA) and the Lithium-on Pistol Grip Tool (LPGT) was pursued to inform design decisions and to understand the results of extensive development testing with the goal...

Space and phase resolved ion energy and angular distributions in single- and dual-frequency capacitively coupled plasmas

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yiting; Kushner, Mark J. [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109-2122 (United States); Moore, Nathaniel; Pribyl, Patrick; Gekelman, Walter [Department of Physics, University of California, Los Angeles, California 90095 (United States)

2013-11-15

The control of ion energy and angular distributions (IEADs) is critically important for anisotropic etching or deposition in microelectronic fabrication processes. With single frequency capacitively coupled plasmas (CCPs), the narrowing in angle and spread in energy of ions as they cross the sheath are definable functions of frequency, sheath width, and mean free path. With increases in wafer size, single frequency CCPs are finding difficulty in meeting the requirement of simultaneously controlling plasma densities, ion fluxes, and ion energies. Dual-frequency CCPs are being investigated to provide this flexible control. The high frequency (HF) is intended to control the plasma density and ion fluxes, while the ion energies are intended to be controlled by the low frequency (LF). However, recent research has shown that the LF can also influence the magnitude of ion fluxes and that IEADs are determined by both frequencies. Hence, separate control of fluxes and IEADs is complex. In this paper, results from a two-dimensional computational investigation of Ar/O{sub 2} plasma properties in an industrial reactor are discussed. The IEADs are tracked as a function of height above the substrate and phase within the rf cycles from the bulk plasma to the presheath and through the sheath with the goal of providing insights to this complexity. Comparison is made to laser-induced fluorescence experiments. The authors found that the ratios of HF/LF voltage and driving frequency are critical parameters in determining the shape of the IEADs, both during the transit of the ion through the sheath and when ions are incident onto the substrate. To the degree that contributions from the HF can modify plasma density, sheath potential, and sheath thickness, this may provide additional control for the IEADs.

Particle therapy for mucosal melanoma of the head and neck. A single-institution retrospective comparison of proton and carbon ion therapy

Energy Technology Data Exchange (ETDEWEB)

Demizu, Y.; Fujii, O.; Terashima, K.; Mima, M.; Hashimoto, N.; Fuwa, N. [Hyogo Ion Beam Medical Center, Department of Radiology, Tatsuno, Hyogo (Japan); Niwa, Y. [Hyogo College of Medicine, Department of Radiology, Nishinomiya, Hyogo (Japan); Akagi, T. [Hyogo Ion Beam Medical Center, Department of Radiation Physics, Tatsuno, Hyogo (Japan); Daimon, T. [Hyogo College of Medicine, Department of Biostatistics, Nishinomiya, Hyogo (Japan); Murakami, M. [Dokkyo Medical University, Center for Radiation Oncology, Shimotsuga-gun, Tochigi (Japan)

2014-02-15

To retrospectively analyze treatment outcomes after particle therapy using protons or carbon ions for mucosal melanoma of the head and neck (HNMM) at the Hyogo Ion Beam Medical Center, as well as to compare proton therapy (PT) and carbon ion therapy (CIT). Data from 62 HNMM patients without metastasis, treated with PT or CIT between October 2003 and April 2011 were analyzed. Median patient age was 70.5 years (range 33-89 years). Of the total patients, 33 (53 %) had received PT and 29 (47 %) had undergone CIT. Protocols for 65 or 70.2 GyE in 26 fractions were used for both ion types. Median follow-up was 18.0 months (range 5.2-82.7 months). The 1-/2-year overall survival (OS) and local control (LC) rates were 93 %/61 % and 93 %/78 % for all patients, 91 %/44 % and 92 %/71 % for the PT patients and 96 %/62 % and 95 %/59 % for the CIT patients, respectively. No significant differences were observed between PT and CIT. Local recurrence was observed in 8 patients (PT: 5, CIT: 3) and 29 (PT: 18, CIT: 11) experienced distant metastases. Acute reactions were acceptable and all patients completed the planned radiotherapy. Regarding late toxicity, grade 3 or greater events were observed in 5 patients (PT: 3, CIT: 2), but no significant difference was observed between PT and CIT. Our single-institution retrospective analysis demonstrated that particle therapy for HNMM achieved good LC, but OS was unsatisfactory. There were no significant differences between PT and CIT in terms of either efficacy or toxicity. (orig.)

The effect of incidence angle on ion bombardment induced surface topography development on single crystal copper

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.; Lewis, G.W.; Whitton, J.L.

1982-01-01

The fluence dependence of development of microscopic surface features, particularly etch pits, during 9 keV Ar + ion bombardment of (11,3,1) oriented Cu single crystals has been studied employing quasi-dynamic irradiation and observation techniques in a scanning electron microscope-accelerator system. 9 keV ions are observed not to produce crystallographic pyramids under all irradiation conditions for this surface, a very different result from our earlier studies with higher energy ions. The bombardment does elaborate etch pits however, the habits and growth kinetics of which depend upon both polar and azimuthal angles of ion incidence to the surface. The results are explained in terms of differential erosion of crystal planes modified by the presence of pre-existing and irradiation induces extended defects. (orig.)

Realistic modelling of jets in heavy-ion collisions

International Nuclear Information System (INIS)

Young, Clint; Schenke, Björn; Jeon, Sangyong; Gale, Charles

2013-01-01

The reconstruction of jets in heavy-ion collisions provides insight into the dynamics of hard partons in media. Unlike the spectrum of single hadrons, the spectrum of jets is highly sensitive to q -hat ⊥ , as well as being sensitive to partonic energy loss and radiative processes. We use martini, an event generator, to study how finite-temperature processes at leading order affect dijets

Use of Proton SEE Data as a Proxy for Bounding Heavy-Ion SEE Susceptibility

Science.gov (United States)

Ladbury, Raymond L.; Lauenstein, Jean-Marie; Hayes, Kathryn P.

2015-01-01

Although heavy-ion single-event effects (SEE) pose serious threats to semiconductor devices in space, many missions face difficulties testing such devices at heavy-ion accelerators. Low-cost missions often find such testing too costly. Even well funded missions face issues testing commercial off the shelf (COTS) due to packaging and integration. Some missions wish to fly COTS systems with little insight into their components. Heavy-ion testing such parts and systems requires access to expensive and hard-to-access ultra-high energy ion accelerators, or significant system modification. To avoid these problems, some have proposed using recoil ions from high-energy protons as a proxy to bound heavy-ion SEE rates.

Single-color, in situ photolithography marking of individual CdTe/ZnTe quantum dots containing a single Mn{sup 2+} ion

Energy Technology Data Exchange (ETDEWEB)

Sawicki, K.; Malinowski, F. K.; Gałkowski, K.; Jakubczyk, T.; Kossacki, P.; Pacuski, W.; Suffczyński, J., E-mail: Jan.Suffczynski@fuw.edu.pl [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5 St., PL-02-093 Warsaw (Poland)

2015-01-05

A simple, single-color method for permanent marking of the position of individual self-assembled semiconductor Quantum Dots (QDs) at cryogenic temperatures is reported. The method combines in situ photolithography with standard micro-photoluminescence spectroscopy. Its utility is proven by a systematic magnetooptical study of a single CdTe/ZnTe QD containing a Mn{sup 2+} ion, where a magnetic field of up to 10 T in two orthogonal, Faraday and Voigt, configurations is applied to the same QD. The presented approach can be applied to a wide range of solid state nanoemitters.

Single Event Effects (SEE) for Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

Science.gov (United States)

Lauenstein, Jean-Marie

2011-01-01

Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide.

Jet production in heavy ion collisions

CERN Document Server

Calucci, G

2000-01-01

We discuss the production of jets in heavy ion collisions at LHC. The process allows one to determine to a good accuracy the value of the impact parameter of the nuclear collision in each single inelastic event. The knowledge of the geometry is a powerful tool for a detailed analysis of the process, making it possible to test the various different elements which, in accordance with present theoretical ideas, take part to the production mechanism. (8 refs).

Experimental study of single-electron loss by Ar+ ions in rare-gas atoms

Science.gov (United States)

Reyes, P. G.; Castillo, F.; Martínez, H.

2001-04-01

Absolute differential and total cross sections for single-electron loss were measured for Ar+ ions on rare-gas atoms in the laboratory energy range of 1.5 to 5.0 keV. The electron loss cross sections for all the targets studied are found to be in the order of magnitude between 10-19 and 10-22 cm2, and show a monotonically increasing behaviour as a function of the incident energy. The behaviour of the total single-electron loss cross sections with the atomic target number, Zt, shows different dependences as the collision energy increases. In all cases the present results display experimental evidence of saturation in the single-electron loss cross section as the atomic number of the target increases.

Recent results on event-by-event fluctuations in ALICE at the LHC

CERN Document Server

AUTHOR|(CDS)2083375

2015-01-01

Non-statistical event-by-event fluctuations in relativistic heavy-ion collisions have been proposed as a probe of the phase transition of hadronic matter to a deconfined phase of quarks and gluons, the so-called Quark-Gluon Plasma. In a thermodynamical picture of the strongly interacting system formed in heavy-ion collisions, the dynamical fluctuations of net-charge, fluctuations of the mean transverse momentum, mean multiplicity and balance functions are related to the fundamental properties of the system, hence they may reveal information about the QCD phase transition. In this article, recent results on event-by-event measurements of net-charge fluctuations, the measurement of the balance function and mean transverse momentum fluctuations are discussed.

Single-crystalline LiFePO4 nanosheets for high-rate Li-ion batteries.

Science.gov (United States)

Zhao, Yu; Peng, Lele; Liu, Borui; Yu, Guihua

2014-05-14

The lithiation/delithiation in LiFePO4 is highly anisotropic with lithium-ion diffusion being mainly confined to channels along the b-axis. Controlling the orientation of LiFePO4 crystals therefore plays an important role for efficient mass transport within this material. We report here the preparation of single crystalline LiFePO4 nanosheets with a large percentage of highly oriented {010} facets, which provide the highest pore density for lithium-ion insertion/extraction. The LiFePO4 nanosheets show a high specific capacity at low charge/discharge rates and retain significant capacities at high C-rates, which may benefit the development of lithium batteries with both favorable energy and power density.

Electron impact single detachment on the F- ions using the heavy ion storage ring CRYRING: cross-section determination

International Nuclear Information System (INIS)

Andersson, K.; Hanstorp, D.; Oesterdahl, F.; Danared, H.; Kaellberg, A.

2001-01-01

Electron Impact Single Detachment (EISD) of F - has been studied using the heavy ion storage ring CRYRING at the Manne Siegbahn Laboratory, Stockholm, Sweden. F - ions stored in the ring were merged with an electron beam in one of the ring sections. Neutral F atoms produced in the EISD process were detected in the zero-degree direction using a surface barrier detector. The threshold for the detachment process was found to be around 7.6 eV, thus more than twice the binding energy of F - . The cross-sections increased smoothly up to 55 eV where it reached a maximum of 1.9 x 10 -16 cm 2 . At higher energies a slow decrease of the cross-section was observed, which follows the energy dependence predicted by the Bethe-Born approximation. The experiment showed that CRYRING can be used favourably for studies of anions, and several experiments are forthcoming. (orig.)

Electrical characterization of single cells using polysilicon wire ion sensor in an isolation window.

Science.gov (United States)

Wu, You-Lin; Hsu, Po-Yen; Hsu, Chung-Ping; Wang, Chih-Cheng; Lee, Li-Wen; Lin, Jing-Jenn

2011-10-01

A polysilicon wire (PSW) sensor can detect the H(+) ion density (pH value) of the medium coated on its surface, and different cells produce different extracellular acidification and hence different H(+) ion densities. Based on this, we used a PSW sensor in combination with a mold-cast polydimethylsiloxane (PDMS) isolation window to detect the adhesion, apoptosis and extracellular acidification of single normal cells and single cancer cells. Single living human normal cells WI38, MRC5, and BEAS-2B as well as non-small-cell lung cancer (NSCLC) cells A549, H1299, and CH27 were cultivated separately inside the isolation window. The current flowing through the PSW channel was measured. From the PSW channel current change as a function of time, we determined the cell adhesion time by observing the time required for the current change to saturate, since a stable extracellular ion density was established after the cells were completely adhered to the PSW surface. The apoptosis of cells can also be determined when the channel current change drops to zero. We found that all the NSCLC cells had a higher channel current change and hence a lower pH value than the normal cells anytime after they were seeded. The corresponding average pH values were 5.86 for A549, 6.00 for H1299, 6.20 for CH27, 6.90 for BEAS-2B, 6.96for MRC5, and 7.02 for WI38, respectively, after the cells were completely adhered to the PSW surface. Our results show that NSCLC cells have a stronger cell-substrate adhesion and a higher extracellular acidification rate than normal cells.

Single Event Upset Energy Dependence In a Buck-Converter Power Supply Design

CERN Document Server

Drake, G; The ATLAS collaboration; Gopalakrishnan, A; Mahadik, S; Mellado, B; Proudfoot, J; Reed, R; Senthilkumaran, A; Stanek, R

2012-01-01

We present a study of Single Event Upsets (SEU) performed on a commercial pulse-width modulator controller chip for switching power supplies. We performed tests to study the probability of an SEU occurring as a function of incident particle (hadron) energy. We discuss the performance of the circuit, and present a solution using external circuitry to effectively eliminate the effect.

Quantum phase transitions driven by rhombic-type single-ion anisotropy in the S =1 Haldane chain

Science.gov (United States)

Tzeng, Yu-Chin; Onishi, Hiroaki; Okubo, Tsuyoshi; Kao, Ying-Jer

2017-08-01

The spin-1 Haldane chain is an example of the symmetry-protected-topological (SPT) phase in one dimension. Experimental realization of the spin chain materials usually involves both the uniaxial-type, D (Sz)2 , and the rhombic-type, E [(Sx)2-(Sy)2] , single-ion anisotropies. Here, we provide a precise ground-state phase diagram for a spin-1 Haldane chain with these single-ion anisotropies. Using quantum numbers, we find that the Z2 symmetry breaking phase can be characterized by double degeneracy in the entanglement spectrum. Topological quantum phase transitions take place on particular paths in the phase diagram, from the Haldane phase to the large-Ex, large-Ey, or large-D phases. The topological critical points are determined by the level spectroscopy method with a newly developed parity technique in the density matrix renormalization group [Phys. Rev. B 86, 024403 (2012), 10.1103/PhysRevB.86.024403], and the Haldane-large-D critical point is obtained with an unprecedented precision, (D/J ) c=0.9684713 (1 ) . Close to this critical point, a small rhombic single-ion anisotropy |E |/J ≪1 can destroy the Haldane phase and bring the system into a y -Néel phase. We propose that the compound [Ni (HF2) (3-Clpy ) 4] BF4 is a candidate system to search for the y -Néel phase.

Charge-state correlated cross sections for the production of low-velocity highly charged Ne ions by heavy-ion bombardment

International Nuclear Information System (INIS)

Gray, T.J.; Cocke, C.L.; Justiniano, E.

1980-01-01

We report measured cross sections for the collisional production of highly charged low-velocity Ne recoil ions resulting from the bombardment of a thin Ne gas target by highly charged 1-MeV/amu C, N, O, and F projectiles. The measurements were made using time-of-flight techniques which allowed the simultaneous identification of the final charge state of both the low-velocity recoil ion and the high-velocity projectile for each collision event. For a given incident-projectile charge state, the recoil charge-state distribution is very dependent upon the final charge state of the projectile. Single- and double-electron capture events by incident bare nuclei and projectile K-shell ionization during the collision cause large shifts in the recoil charge-state distributions toward higher charge states. A previously proposed energy-deposition model is modified to include the effects of projectile charge-changing collisions during the collision for bare and hydrogenlike projectiles and is used to discuss the present experimental results

Origin of energetic ions in the polar cusp inferred from ion composition measurements by the Viking satellite

Directory of Open Access Journals (Sweden)

G. Kremser

1995-06-01

Full Text Available The magnetospheric ion composition spectrometer MICS on the Swedish Viking satellite provided measurements of the ion composition in the energy range 10.1 keV/e\\leqE/Q\\leq326.0 keV/e. Data obtained during orbit 842 were used to investigate the ion distribution in the northern polar cusp and its vicinity. The satellite traversed the outer ring current, boundary region, cusp proper and plasma mantle during its poleward movement. H+ and He++ ions were encountered in all of these regions. He+ ions were present only in the ring current. The number of O+ and O++ ions was very small. Heavy high-charge state ions typical for the solar wind were observed for the first time, most of them in the poleward part of the boundary region and in the cusp proper. The H+ ions exhibited two periods with high intensities. One of them, called the BR/CP event, appeared at energies up to 50 keV. It started at the equatorward limit of the boundary region and continued into the cusp proper. Energy spectra indicate a ring current origin for the BR/CP event. Pitch angle distributions show downward streaming of H+ ions at its equatorward limit and upward streaming on the poleward side. This event is interpreted as the result of pitch angle scattering of ring current ions by fluctuations in the magnetopause current layer in combination with poleward convection. The other of the two periods with high H+ ion intensities, called the accelerated ion event, was superimposed on the BR/CP event. It was restricted to energies \\leq15 keV and occurred in the poleward part of the boundary region. This event is regarded as the high-energy tail of magnetosheath ions that were accelerated while penetrating into the magnetosphere. The cusp region thus contains ions of magnetospheric as well as of magnetosheath origin. The appearance of the ions depends, in addition to the ion source, on the magnetic field configuration and dynamic processes inside and close to the cusp.

Crystal-field analysis of U3+ ions in K2LaX5 (X=Cl, Br or I) single crystals

Science.gov (United States)

Karbowiak, M.; Edelstein, N.; Gajek, Z.; Drożdżyński, J.

1998-11-01

An analysis of low temperature absorption spectra of U3+ ions doped in K2LaX5 (X=Cl, Br or I) single crystals is reported. The energy levels of the U3+ ion in the single crystals were assigned and fitted to a semiempirical Hamiltonian representing the combined atomic and crystal-field interactions at the Cs symmetry site. An analysis of the nephelauxetic effect and crystal-field splittings in the series of compounds is also reported.

Monitoring of seismic events from a specific source region using a single regional array: A case study

Science.gov (United States)

Gibbons, S. J.; Kværna, T.; Ringdal, F.

2005-07-01

In the monitoring of earthquakes and nuclear explosions using a sparse worldwide network of seismic stations, it is frequently necessary to make reliable location estimates using a single seismic array. It is also desirable to screen out routine industrial explosions automatically in order that analyst resources are not wasted upon detections which can, with a high level of confidence, be associated with such a source. The Kovdor mine on the Kola Peninsula of NW Russia is the site of frequent industrial blasts which are well recorded by the ARCES regional seismic array at a distance of approximately 300 km. We describe here an automatic procedure for identifying signals which are likely to result from blasts at the Kovdor mine and, wherever possible, for obtaining single array locations for such events. Carefully calibrated processing parameters were chosen using measurements from confirmed events at the mine over a one-year period for which the operators supplied Ground Truth information. Phase arrival times are estimated using an autoregressive method and slowness and azimuth are estimated using broadband f{-} k analysis in fixed frequency bands and time-windows fixed relative to the initial P-onset time. We demonstrate the improvement to slowness estimates resulting from the use of fixed frequency bands. Events can be located using a single array if, in addition to the P-phase, at least one secondary phase is found with both an acceptable slowness estimate and valid onset-time estimate. We evaluate the on-line system over a twelve month period; every event known to have occured at the mine is detected by the process and 32 out of 53 confirmed events were located automatically. The remaining events were classified as “very likely” Kovdor events and were subsequently located by an analyst. The false alarm rate is low; only 84 very likely Kovdor events were identified during the whole of 2003 and none of these were subsequently located at a large distance from

Effectiveness Analysis of a Non-Destructive Single Event Burnout Test Methodology

CERN Document Server

Oser, P; Spiezia, G; Fadakis, E; Foucard, G; Peronnard, P; Masi, A; Gaillard, R

2014-01-01

It is essential to characterize power MosFETs regarding their tolerance to destructive Single Event Burnouts (SEB). Therefore, several non-destructive test methods have been developed to evaluate the SEB cross-section of power devices. A power MosFET has been evaluated using a test circuit, designed according to standard non-destructive test methods discussed in the literature. Guidelines suggest a prior adaptation of auxiliary components to the device sensitivity before the radiation test. With the first value chosen for the de-coupling capacitor, the external component initiated destructive events and affected the evaluation of the cross-section. As a result, the influence of auxiliary components on the device cross-section was studied. This paper presents the obtained experimental results, supported by SPICE simulations, to evaluate and discuss how the circuit effectiveness depends on the external components.

Highly focused ion beams in integrated circuit testing

International Nuclear Information System (INIS)

Horn, K.M.; Dodd, P.E.; Doyle, B.L.

1996-01-01

The nuclear microprobe has proven to be a useful tool in radiation testing of integrated circuits. This paper reviews single event upset (SEU) and ion beam induced charge collection (IBICC) imaging techniques, with special attention to damage-dependent effects. Comparisons of IBICC measurements with three-dimensional charge transport simulations of charge collection are then presented for isolated p-channel field effect transistors under conducting and non-conducting bias conditions

Nuclear interaction contribution to SEUs in heavy ion energy deposition in the ESA monitor

CERN Document Server

Bahamonde, Cristina

2013-01-01

The effects of nuclear interactions inducing Single Event Upsets in ESA SEU monitor are explored for heavy ion beams of different energies. The experimental and simulated results are compared, the possible causes of disagreement are suggested as well as the future steps to take.

TDRS-1 single event upsets and the effect of the space environment

International Nuclear Information System (INIS)

Wilkinson, D.C.; Daughtridge, S.C.; Stone, J.L.; Sauer, H.H.; Darling, P.

1991-01-01

The systematic recording of Single Event Upsets on TDRS-1 from 1984 to 1990 allows correlations to be drawn between those upsets and the space environment. In this paper, ground based neutron monitor data are used to illustrate the long-term relationship between galactic cosmic rays and TDRS-1 upsets. The short-term effects of energetic solar particles are illustrated with space environment data from GOES-7

Ion-irradiation-induced defects in bundles of carbon nanotubes

International Nuclear Information System (INIS)

Salonen, E.; Krasheninnikov, A.V.; Nordlund, K.

2002-01-01

We study the structure and formation yields of atomic-scale defects produced by low-dose Ar ion irradiation in bundles of single-wall carbon nanotubes. For this, we employ empirical potential molecular dynamics and simulate ion impact events over an energy range of 100-1000 eV. We show that the most common defects produced at all energies are vacancies on nanotube walls, which at low temperatures are metastable but long-lived defects. We further calculate the spatial distribution of the defects, which proved to be highly non-uniform. We also show that ion irradiation gives rise to the formations of inter-tube covalent bonds mediated by carbon recoils and nanotube lattice distortions due to dangling bond saturation. The number of inter-tube links, as well as the overall damage, linearly grows with the energy of incident ions

Fusion events

International Nuclear Information System (INIS)

Aboufirassi, M; Angelique, J.C.; Bizard, G.; Bougault, R.; Brou, R.; Buta, A.; Colin, J.; Cussol, D.; Durand, D.; Genoux-Lubain, A.; Horn, D.; Kerambrun, A.; Laville, J.L.; Le Brun, C.; Lecolley, J.F.; Lefebvres, F.; Lopez, O.; Louvel, M.; Meslin, C.; Metivier, V.; Nakagawa, T.; Peter, J.; Popescu, R.; Regimbart, R.; Steckmeyer, J.C.; Tamain, B.; Vient, E.; Wieloch, A.; Yuasa-Nakagawa, K.

1998-01-01

The fusion reactions between low energy heavy ions have a very high cross section. First measurements at energies around 30-40 MeV/nucleon indicated no residue of either complete or incomplete fusion, thus demonstrating the disappearance of this process. This is explained as being due to the high amount o energies transferred to the nucleus, what leads to its total dislocation in light fragments and particles. Exclusive analyses have permitted to mark clearly the presence of fusion processes in heavy systems at energies above 30-40 MeV/nucleon. Among the complete events of the Kr + Au reaction at 60 MeV/nucleon the majority correspond to binary collisions. Nevertheless, for the most considerable energy losses, a class of events do occur for which the detected fragments appears to be emitted from a unique source. These events correspond to an incomplete projectile-target fusion followed by a multifragmentation. Such events were singled out also in the reaction Xe + Sn at 50 MeV/nucleon. For the events in which the energy dissipation was maximal it was possible to isolate an isotropic group of events showing all the characteristics of fusion nuclei. The fusion is said to be incomplete as pre-equilibrium Z = 1 and Z = 2 particles are emitted. The cross section is of the order of 25 mb. Similar conclusions were drown for the systems 36 Ar + 27 Al and 64 Zn + nat Ti. A cross section value of ∼ 20 mb was determined at 55 MeV/nucleon in the first case, while the measurement of evaporation light residues in the last system gave an upper limit of 20-30 mb for the cross section at 50 MeV/nucleon

EPR and optical absorption studies of paramagnetic molecular ion (VO2+) in Lithium Sodium Acid Phthalate single crystal

Science.gov (United States)

Subbulakshmi, N.; Kumar, M. Saravana; Sheela, K. Juliet; Krishnan, S. Radha; Shanmugam, V. M.; Subramanian, P.

2017-12-01

Electron Paramagnetic Resonance (EPR) spectroscopic studies of VO2+ ions as paramagnetic impurity in Lithium Sodium Acid Phthalate (LiNaP) single crystal have been done at room temperature on X-Band microwave frequency. The lattice parameter values are obtained for the chosen system from Single crystal X-ray diffraction study. Among the number of hyperfine lines in the EPR spectra only two sets are reported from EPR data. The principal values of g and A tensors are evaluated for the two different VO2+ sites I and II. They possess the crystalline field around the VO2+ as orthorhombic. Site II VO2+ ion is identified as substitutional in place of Na1 location and the other site I is identified as interstitial location. For both sites in LiNaP, VO2+ are identified in octahedral coordination with tetragonal distortion as seen from the spin Hamiltonian parameter values. The ground state of vanadyl ion in the LiNaP single crystal is dxy. Using optical absorption data the octahedral and tetragonal parameters are calculated. By correlating EPR and optical data, the molecular orbital bonding parameters have been discussed for both sites.

THE 'TWIN-CME' SCENARIO AND LARGE SOLAR ENERGETIC PARTICLE EVENTS IN SOLAR CYCLE 23

International Nuclear Information System (INIS)

Ding, Liuguan; Jiang, Yong; Zhao, Lulu; Li, Gang

2013-01-01

Energetic particles in large solar energetic particle (SEP) events are a major concern for space weather. Recently, Li et al. proposed a 'twin-CME' scenario for ground-level events. Here we extend that study to large SEP events in solar cycle 23. Depending on whether preceding coronal mass ejections (CMEs) within 9 hr exist and whether ions >10 MeV nucleon –1 exceed 10 pfu, we categorize fast CMEs with speed >900 km s –1 and width >60° from the western hemisphere source regions into four groups: groups I and II are 'twin' and single CMEs that lead to large SEPs; groups III and IV are 'twin' and single CMEs that do not lead to large SEPs. The major findings of this paper are: first, large SEP events tend to be 'twin-CME' events. Of 59 western large SEP events in solar cycle 23, 43 are 'twin-CME' (group I) events and 16 are single-CME (group II) events. Second, not all 'twin CMEs' produced large SEPs: 28 twin CMEs did not produce large SEPs (group III events). Some of them produced excesses of particles up to a few MeV nucleon –1 . Third, there were 39 single fast CMEs that did not produce SEPs (group IV events). Some of these also showed an excess of particles up to a few MeV nucleon –1 . For all four groups of events, we perform statistical analyses on properties such as the angular width, the speed, the existence of accompanying metric type II radio bursts, and the associated flare class for the main CMEs and the preceding CMEs.

Quantum sensing of the phase-space-displacement parameters using a single trapped ion

Science.gov (United States)

Ivanov, Peter A.; Vitanov, Nikolay V.

2018-03-01

We introduce a quantum sensing protocol for detecting the parameters characterizing the phase-space displacement by using a single trapped ion as a quantum probe. We show that, thanks to the laser-induced coupling between the ion's internal states and the motion mode, the estimation of the two conjugated parameters describing the displacement can be efficiently performed by a set of measurements of the atomic state populations. Furthermore, we introduce a three-parameter protocol capable of detecting the magnitude, the transverse direction, and the phase of the displacement. We characterize the uncertainty of the two- and three-parameter problems in terms of the Fisher information and show that state projective measurement saturates the fundamental quantum Cramér-Rao bound.

High-fidelity state detection and tomography of a single-ion Zeeman qubit

International Nuclear Information System (INIS)

Keselman, A; Glickman, Y; Akerman, N; Kotler, S; Ozeri, R

2011-01-01

We demonstrate high-fidelity Zeeman qubit state detection in a single trapped 88 Sr + ion. Qubit readout is performed by shelving one of the qubit states to a metastable level using a narrow linewidth diode laser at 674 nm, followed by state-selective fluorescence detection. The average fidelity reached for the readout of the qubit state is 0.9989(1). We then measure the fidelity of state tomography, averaged over all possible single-qubit states, which is 0.9979(2). We also fully characterize the detection process using quantum process tomography. This readout fidelity is compatible with recent estimates of the detection error threshold required for fault-tolerant computation, whereas high-fidelity state tomography opens the way for high-precision quantum process tomography.

High-fidelity state detection and tomography of a single-ion Zeeman qubit

Energy Technology Data Exchange (ETDEWEB)

Keselman, A; Glickman, Y; Akerman, N; Kotler, S; Ozeri, R, E-mail: ozeri@weizmann.ac.il [Physics of Complex Systems, Weizmann Institute of Science, Rehovot 76100 (Israel)

2011-07-15

We demonstrate high-fidelity Zeeman qubit state detection in a single trapped {sup 88}Sr{sup +} ion. Qubit readout is performed by shelving one of the qubit states to a metastable level using a narrow linewidth diode laser at 674 nm, followed by state-selective fluorescence detection. The average fidelity reached for the readout of the qubit state is 0.9989(1). We then measure the fidelity of state tomography, averaged over all possible single-qubit states, which is 0.9979(2). We also fully characterize the detection process using quantum process tomography. This readout fidelity is compatible with recent estimates of the detection error threshold required for fault-tolerant computation, whereas high-fidelity state tomography opens the way for high-precision quantum process tomography.

Potential impact of single-risk-factor versus total risk management for the prevention of cardiovascular events in Seychelles.

Science.gov (United States)

Ndindjock, Roger; Gedeon, Jude; Mendis, Shanthi; Paccaud, Fred; Bovet, Pascal

2011-04-01

To assess the prevalence of cardiovascular (CV) risk factors in Seychelles, a middle-income African country, and compare the cost-effectiveness of single-risk-factor management (treating individuals with arterial blood pressure ≥ 140/90 mmHg and/or total serum cholesterol ≥ 6.2 mmol/l) with that of management based on total CV risk (treating individuals with a total CV risk ≥ 10% or ≥ 20%). CV risk factor prevalence and a CV risk prediction chart for Africa were used to estimate the 10-year risk of suffering a fatal or non-fatal CV event among individuals aged 40-64 years. These figures were used to compare single-risk-factor management with total risk management in terms of the number of people requiring treatment to avert one CV event and the number of events potentially averted over 10 years. Treatment for patients with high total CV risk (≥ 20%) was assumed to consist of a fixed-dose combination of several drugs (polypill). Cost analyses were limited to medication. A total CV risk of ≥ 10% and ≥ 20% was found among 10.8% and 5.1% of individuals, respectively. With single-risk-factor management, 60% of adults would need to be treated and 157 cardiovascular events per 100000 population would be averted per year, as opposed to 5% of adults and 92 events with total CV risk management. Management based on high total CV risk optimizes the balance between the number requiring treatment and the number of CV events averted. Total CV risk management is much more cost-effective than single-risk-factor management. These findings are relevant for all countries, but especially for those economically and demographically similar to Seychelles.

Ionization and single electron capture in collision of highly charged Ar16+ ions with helium

International Nuclear Information System (INIS)

Wang Fei; Gou Bingcong

2008-01-01

This paper uses the two-centre atomic orbital close-coupling method to study the ionization and the single electron capture in collision of highly charged Ar 16+ ions with He atoms in the velocity range of 1.2–1.9 a.u. The relative importance of single ionization (SI) to single capture (SC) is explored. The comparison between the calculation and experimental data shows that the SI/SC cross section ratios from this work are in good agreement with experimental data. The total single electron ionization cross sections and the total single electron capture cross sections are also given for this collision. The investigation of the partial electron capture cross section shows a general tendency of capture to larger n and l with increasing velocity from 1.2 to 1.9 a.u

Influence of copper single crystal structures on the reflection of low energy hydrogen and helium ions

International Nuclear Information System (INIS)

Feijen, H.H.W.

1975-01-01

A theoretical basis for the 'wedge-focussing' phenomenon is outlined. Investigations have been made to check up to what extent proton reflection can be simulated by using H 2 + or H 3 + as incident ions and analysing the reflected protons. The results of an experimental study of the influence of surface semi-channels on the reflection of low energy ( + , H 2 + and He + ions from copper single crystals with attention to the wedge-focussing effect are presented (G.T.H.)

Synthesis and Characterization of Network Single Ion Conductors(NSIC) Based On Comb-Branched Polyepoxide Ethers and Lithium Bis(allylmalonato)borate

International Nuclear Information System (INIS)

Sun, Xiao-Guang; Kerr, John B.

2004-01-01

Network single ion conductors (NSICs) based on comb-branch polyepoxide ethers and lithium bis(allylmalonato) borate have been synthesized and thoroughly characterized by means of ionic conductivity measurements, electrochemical impedance and by dynamic mechanical analysis (DMA). The materials have been tested as battery electrolytes by cycling in symmetrical Li/Li half cells and in Li/V 6 O 13 full cells in which the NSIC was used as both binder and electrolyte in the cathode electrode and as the electrolyte separator membrane,. The substitution of the trimethylene oxide (TMO) unit into the side chains in place of ethylene oxide (EO) units increased the polymerion mobility (lower glass transition temperature). However, the ionic conductivity was nearly one and half orders of magnitude lower than the corresponding pure EO based single ion conductor at the same salt concentration. This effect may be ascribed to the lower dielectric constant of the TMO side chains that result in a lower concentration of free conducting lithium cations. For a highly cross-linked system (EO/Li=20), only 47 wt% plasticizing solvent (ethylene carbonate (EC)/ethyl methyl carbonate (EMC), 1/1 by wt) could be taken up and the ionic conductivity was only increased by one order of magnitude over the dry polyelectrolyte while for a less densely crosslinked system (EO/Li=80), up to 75 wt% plasticizer could be taken up and the ionic conductivity was increased by nearly two orders of magnitude. A Li/Li symmetric cell that was cycled at 85 C at a current density of 25(micro)Acm -2 showed no concentration polarization or diffusional relaxation, consistent with a lithium ion transference number of one. However, both the bulk and interfacial impedances increased after 20 cycles, apparently due to continued cross-linking reactions within the membrane and on the surface of the lithium electrodes. A Li/V 6 O 13 full cell constructed using a single ion conductor gel (propylene carbonate (PC)/EMC, 1/1 in

Solar Particle Induced Upsets in the TDRS-1 Attitude Control System RAM During the October 1989 Solar Particle Events

Science.gov (United States)

Croley, D. R.; Garrett, H. B.; Murphy, G. B.; Garrard,T. L.

1995-01-01

The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAM unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo, designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEU's calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEU's by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEU'S. The proton fluence spectrum at the device level was gotten by transporting the protons through the estimated shielding distribution. The number of calculated proton-induced SEU's was 72, yielding a total of 248 predicted SEU'S, very dose to the 243 observed SEU'S. These calculations uniquely demonstrate the roles that solar heavy ions and protons played in the production of SEU

Comparison of the ion induced charge collection in Si epilayer and SOI devices

International Nuclear Information System (INIS)

Hirao, Toshio; Mori, Hidenobu; Laird, Jamie Stuart; Onoda, Shinobu; Itoh, Hisayoshi

2003-01-01

It is known that the single-event phenomena (SEP) are the malfunction of micro electronics devices caused by the impact of an energetic heavy ion. Improving the tolerance of devices to the SEP requires a better understanding of basic charge collection mechanisms on the timescales of the order of picoseconds. In order to better elucidate these mechanisms, we measure the fast transient current resulting from heavy ion strikes with a fast sampling data collection system and a heavy ion microbeam line at JAERI. In this paper we report on differences in both the transient current and charge collection from 15 MeV carbon ions on silicon-on-insulator, Si epilayer and bulk p + n junction diodes and charge transportation under MeV ion injection is discussed

Solar particle induced upsets in the TDRS-1 attitude control system RAM during the October 1989 solar particle events

International Nuclear Information System (INIS)

Croley, D.R.; Garrett, H.B.; Murphy, G.B.; Garrard, T.L.

1995-01-01

The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAM unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo, designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEU's calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEU's by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEU's. The proton fluence spectrum at the device level was gotten by transporting the protons through the estimated shielding distribution. The number of calculated proton-induced SEU's was 72, yielding a total of 248 predicted SEU's, very close to the 243 observed SEU's

Luminescence properties of Tm3+ ions single-doped YF3 materials in an unconventional excitation region.

Science.gov (United States)

Chen, Yuan; Liu, Qing; Lin, Han; Yan, Xiaohong

2018-05-01

According to the spectral distribution of solar radiation at the earth's surface, under the excitation region of 1150 to 1350 nm, the up-conversion luminescence of Tm 3+ ions was investigated. The emission bands were matched well with the spectral response region of silicon solar cells, achieved by Tm 3+ ions single-doped yttrium fluoride (YF 3 ) phosphor, which was different from the conventional Tm 3+ /Yb 3+ ion couple co-doped materials. Additionally, the similar emission bands of Tm 3+ ions were achieved under excitation in the ultraviolet region. It is expected that via up-conversion and down-conversion routes, Tm 3+ -sensitized materials could convert photons to the desired wavelengths in order to reduce the energy loss of silicon solar cells, thereby enhancing the photovoltaic efficiency. Copyright © 2018 John Wiley & Sons, Ltd.

Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device.

Science.gov (United States)

Khan, Muhammad Atif; Rathi, Servin; Park, Jinwoo; Lim, Dongsuk; Lee, Yoontae; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

2017-08-16

The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS 2 ) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS 2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 10 3 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS 2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.

A novel aptasensor based on single-molecule force spectroscopy for highly sensitive detection of mercury ions.

Science.gov (United States)

Li, Qing; Michaelis, Monika; Wei, Gang; Colombi Ciacchi, Lucio

2015-08-07

We have developed a novel aptasensor based on single-molecule force spectroscopy (SMFS) capable of detecting mercury ions (Hg(2+)) with sub-nM sensitivity. The single-strand (ss) DNA aptamer used in this work is rich in thymine (T) and readily forms T-Hg(2+)-T complexes in the presence of Hg(2+). The aptamer was conjugated to an atomic force microscope (AFM) probe, and the adhesion force between the probe and a flat graphite surface was measured by single-molecule force spectroscopy (SMFS). The presence of Hg(2+) ions above a concentration threshold corresponding to the affinity constant of the ions for the aptamer (about 5 × 10(9) M(-1)) could be easily detected by a change of the measured adhesion force. With our chosen aptamer, we could reach an Hg(2+) detection limit of 100 pM, which is well below the maximum allowable level of Hg(2+) in drinking water. In addition, this aptasensor presents a very high selectivity for Hg(2+) over other metal cations, such as K(+), Ca(2+), Zn(2+), Fe(2+), and Cd(2+). Furthermore, the effects of the ionic strength and loading rate on the Hg(2+) detection were evaluated. Its simplicity, reproducibility, high selectivity and sensitivity make our SMFS-based aptasensor advantageous with respect to other current Hg(2+) sensing methods. It is expected that our strategy can be exploited for monitoring the pollution of water environments and the safety of potentially contaminated food.

Re-examining the tetraphenyl-arsonium/tetraphenyl-borate (TATB) hypothesis for single-ion solvation free energies

Science.gov (United States)

Pollard, Travis P.; Beck, Thomas L.

2018-06-01

Attempts to establish an absolute single-ion hydration free energy scale have followed multiple strategies. Two central themes consist of (1) employing bulk pair thermodynamic data and an underlying interfacial-potential-free model to partition the hydration free energy into individual contributions [Marcus, Latimer, and tetraphenyl-arsonium/tetraphenyl-borate (TATB) methods] or (2) utilizing bulk thermodynamic and cluster data to estimate the free energy to insert a proton into water, including in principle an interfacial potential contribution [the cluster pair approximation (CPA)]. While the results for the hydration free energy of the proton agree remarkably well between the three approaches in the first category, the value differs from the CPA result by roughly +10 kcal/mol, implying a value for the effective electrochemical surface potential of water of -0.4 V. This paper provides a computational re-analysis of the TATB method for single-ion free energies using quasichemical theory. A previous study indicated a significant discrepancy between the free energies of hydration for the TA cation and the TB anion. We show that the main contribution to this large computed difference is an electrostatic artifact arising from modeling interactions in periodic boundaries. No attempt is made here to develop more accurate models for the local ion/solvent interactions that may lead to further small free energy differences between the TA and TB ions, but the results clarify the primary importance of interfacial potential effects for analysis of the various free energy scales. Results are also presented, related to the TATB assumption in the organic solvents dimethyl sulfoxide and 1,2-dichloroethane.

New light on ion channel imaging by total internal reflection fluorescence (TIRF) microscopy.

Science.gov (United States)

Yamamura, Hisao; Suzuki, Yoshiaki; Imaizumi, Yuji

2015-05-01

Ion channels play pivotal roles in a wide variety of cellular functions; therefore, their physiological characteristics, pharmacological responses, and molecular structures have been extensively investigated. However, the mobility of an ion channel itself in the cell membrane has not been examined in as much detail. A total internal reflection fluorescence (TIRF) microscope allows fluorophores to be imaged in a restricted region within an evanescent field of less than 200 nm from the interface of the coverslip and plasma membrane in living cells. Thus the TIRF microscope is useful for selectively visualizing the plasmalemmal surface and subplasmalemmal zone. In this review, we focused on a single-molecule analysis of the dynamic movement of ion channels in the plasma membrane using TIRF microscopy. We also described two single-molecule imaging techniques under TIRF microscopy: fluorescence resonance energy transfer (FRET) for the identification of molecules that interact with ion channels, and subunit counting for the determination of subunit stoichiometry in a functional channel. TIRF imaging can also be used to analyze spatiotemporal Ca(2+) events in the subplasmalemma. Single-molecule analyses of ion channels and localized Ca(2+) signals based on TIRF imaging provide beneficial pharmacological and physiological information concerning the functions of ion channels. Copyright © 2015 The Authors. Production and hosting by Elsevier B.V. All rights reserved.

Origin of energetic ions in the polar cusp inferred from ion composition measurements by the Viking satellite

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G. Kremser

Full Text Available The magnetospheric ion composition spectrometer MICS on the Swedish Viking satellite provided measurements of the ion composition in the energy range 10.1 keV/eleqE/Qleq326.0 keV/e. Data obtained during orbit 842 were used to investigate the ion distribution in the northern polar cusp and its vicinity. The satellite traversed the outer ring current, boundary region, cusp proper and plasma mantle during its poleward movement. H⁺ and He⁺⁺ ions were encountered in all of these regions. He⁺ ions were present only in the ring current. The number of O⁺ and O⁺⁺ ions was very small. Heavy high-charge state ions typical for the solar wind were observed for the first time, most of them in the poleward part of the boundary region and in the cusp proper. The H⁺ ions exhibited two periods with high intensities. One of them, called the BR/CP event, appeared at energies up to 50 keV. It started at the equatorward limit of the boundary region and continued into the cusp proper. Energy spectra indicate a ring current origin for the BR/CP event. Pitch angle distributions show downward streaming of H⁺ ions at its equatorward limit and upward streaming on the poleward side. This event is interpreted as the result of pitch angle scattering of ring current ions by fluctuations in the magnetopause current layer in combination with poleward convection. The other of the two periods with high H⁺ ion intensities, called the accelerated ion event, was superimposed on the BR/CP event. It was restricted to energies leq15 keV and occurred in the poleward part of the boundary region. This event is regarded as the high-energy tail of magnetosheath ions that were accelerated while penetrating into the magnetosphere. The cusp region thus contains ions of magnetospheric as well as of magnetosheath origin. The appearance of the ions depends, in addition to the ion source, on the