Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

International Nuclear Information System (INIS)

Shim, Byoung Rho; Torii, Satoshi; Ota, Takeshi; Kobayashi, Keisuke; Maehashi, Kenzo; Nakashima, Hisao; Lee, Sang Yun

1999-01-01

We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In x Ga 1-x As layers with x≤ 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing InGaAs thickness. The degree of polarization for the InGaAs QWRs was about 0.29. The PL observation evidences the carrier confinement in the QWRs. These results indicate that locally thick InGaAs strained QWRs were successfully formed at the edge of AlGaAs giant steps

Spin injection from Co2MnGa into an InGaAs quantum well

DEFF Research Database (Denmark)

Hickey, M. C.; Damsgaard, Christian Danvad; Holmes, S. N.

2008-01-01

We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifet...

Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities

DEFF Research Database (Denmark)

Reitzenstein, S.; Schneider, C.; Albert, F.

2011-01-01

Semiconductor quantum dots (QDs) are fascinating nanoscopic structures for photonics and future quantum information technology. However, the random position of self-organized QDs inhibits a deterministic coupling in devices relying on cavity quantum electrodynamics (cQED) effects which complicates......, e.g., the large scale fabrication of quantum light sources. As a result, large efforts focus on the growth and the device integration of site-controlled QDs. We present the growth of low density arrays of site-controlled In(Ga)As QDs where shallow etched nanoholes act as nucleation sites...... linewidth, the oscillator strength and the quantum efficiency. A stacked growth of strain coupled SCQDs forming on wet chemically etched nanoholes provide the smallest linewidth with an average value of 210 μeV. Using time resolved photoluminescence studies on samples with a varying thickness of the capping...

From structure to spectra. Tight-binding theory of InGaAs quantum dots

International Nuclear Information System (INIS)

Goldmann, Elias

2014-01-01

demonstrates the applicability of InGaAs quantum dots for quantum telecommunication at the desired telecom wavelengths, offering good growth controllability. For the application in lasers, quantum based active media are known to offer superior properties to common quantum well lasers such as low threshold currents or temperature stability. For device design, the knowledge about the saturation behaviour of optical gain with excitation density is of major importance. In the present work we combine quantum-kinetic models for the calculation of the optical gain of quantum dot active media with our atomistic tight-binding model for the calculation of single-particle energies and wave functions. We investigate the interplay between structural properties of the quantum dots and many-body effects in the optical gain spectra and identify different regimes of saturation behaviour. Either phase-space filling dominates the excitation dependence of the optical gain, leading to saturation, or excitation-induced dephasing dominates the excitation dependence of the optical gain, resulting in a negative differential gain.

From structure to spectra. Tight-binding theory of InGaAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Goldmann, Elias

2014-07-23

counterintuitively. Our result demonstrates the applicability of InGaAs quantum dots for quantum telecommunication at the desired telecom wavelengths, offering good growth controllability. For the application in lasers, quantum based active media are known to offer superior properties to common quantum well lasers such as low threshold currents or temperature stability. For device design, the knowledge about the saturation behaviour of optical gain with excitation density is of major importance. In the present work we combine quantum-kinetic models for the calculation of the optical gain of quantum dot active media with our atomistic tight-binding model for the calculation of single-particle energies and wave functions. We investigate the interplay between structural properties of the quantum dots and many-body effects in the optical gain spectra and identify different regimes of saturation behaviour. Either phase-space filling dominates the excitation dependence of the optical gain, leading to saturation, or excitation-induced dephasing dominates the excitation dependence of the optical gain, resulting in a negative differential gain.

Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

CERN Document Server

Vdovin, V I; Rzaev, M M; Burbaev, T M

2002-01-01

A multilayer GaAs/SiGe/Si heterostructure with InGaAs quantum dots (QDs) embedded in a GaAs layer was grown by molecular beam epitaxy (MBE) on a Si(001) substrate. A step-graded Si sub 1 sub - sub x Ge sub x (0 <= x <= 1) buffer layer and a GaAs layer with In sub y Ga sub 1 sub sub - sub y As (y approx 0.5) QDs were deposited consecutively in two different MBE systems. The heterostructure exhibits intense photoluminescence in the region of 1.3 mu m at room temperature. Perfect crystal InGaAs islands with height less than 10 nm are the sources of this radiation.

Gain dynamics in p-doped InGaAs quantum dot amplifiers from room to cryogenic temperatures

NARCIS (Netherlands)

Borri, P.; Cesaria, V.; Rossetti, M.; Fiore, A.; Langbein, W.

2009-01-01

We have compared the gain dynamics of the ground state excitonic transition between undoped and p-doped electrically-pumped InGaAs quantum-dot optical amplifiers, for temperatures from 300K to 20K. A pump-probe differential transmission technique in heterodyne detection with sub-picosecond time

Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.

Science.gov (United States)

Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev

2016-06-27

We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer

Increasing the critical thickness of InGaAs quantum wells using strain-relief technologies

Science.gov (United States)

Jones, Andrew Marquis

fabricated, and evidence for partial relief of strain energy has been obtained. Compliant membranes enable strain relief by depositing on an ultra-thin semiconductor base. Unlike growth on typical thick substrates, expansion of the compliant membrane during strained-layer regrowth allows the membrane to accommodate most of the strain energy. Ternary InGaAs compliant films supported above a GaAs substrate with single AlGaAs pedestals have been utilized to fabricate long-wavelength (1.35 mum) InGaAs quantum wells on a GaAs substrate.

Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations

OpenAIRE

Kuznetsova, M. S.; Flisinski, K.; Gerlovin, I. Ya.; Ignatiev, I. V.; Kavokin, K. V.; Verbin, S. Yu.; Yakovlev, D. R.; Reuter, D.; Wieck, A. D.; Bayer, M.

2013-01-01

The role of nuclear spin fluctuations in the dynamic polarization of nuclear spins by electrons is investigated in (In,Ga)As quantum dots. The photoluminescence polarization under circularly polarized optical pumping in transverse magnetic fields (Hanle effect) is studied. A weak additional magnetic field parallel to the optical axis is used to control the efficiency of nuclear spin cooling and the sign of nuclear spin temperature. The shape of the Hanle curve is drastically modified with cha...

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

Science.gov (United States)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Single-photon counting in the 1550-nm wavelength region for quantum cryptography

International Nuclear Information System (INIS)

Park, Chul-Woo; Park, Jun-Bum; Park, Young-Soo; Lee, Seung-Hun; Shin, Hyun-Jun; Bae, Byung-Seong; Moon, Sung; Han, Sang-Kook

2006-01-01

In this paper, we report the measured performance of an InGaAs avalanche photodiode (APD) Module fabricated for single-photon counting. We measured the dark current noise, the after-pulse noise, and the quantum efficiency of the single- photon detector for different temperatures. We then examined our single-photon source and detection system by measuring the coincident probability. From our measurement, we observed that the after-pulse effect of the APD at temperatures below 105 .deg. C caused cascade noise build-up on the succeeding electrical signals.

Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodes

International Nuclear Information System (INIS)

Schramm, A; Polojärvi, V; Hakkarainen, T V; Tukiainen, A; Guina, M

2011-01-01

We study effects of rapid thermal annealing on photoluminescence and electron confinement of InGaAs quantum posts by means of photoluminescence experiments and capacitance–voltage spectroscopy. The quantum posts are embedded in n-type Schottky diodes grown by molecular beam epitaxy on GaAs(1 0 0). The observed photoluminescence spectra arise from the quantum posts as well as from a contribution of a wetting-layer superlattice. With increasing annealing temperatures, the quantum-post photoluminescence blueshifts toward the wetting-layer superlattice, and upon the highest annealing step, the wetting-layer superlattice luminescence dominates. In capacitance–voltage experiments, we clearly observe a charge accumulation in the quantum-post layer as well as from the wetting-layer superlattice. Capacitance–voltage spectra and carrier-density profiles only experience slight changes upon annealing treatments. We suggest that the main electron accumulation takes place in the wetting-layer superlattice

Intrinsic and environmental effects on the interference properties of a high-performance quantum dot single-photon source

DEFF Research Database (Denmark)

Gerhardt, Stefan; Iles-Smith, Jake; McCutcheon, Dara

2018-01-01

We report a joint experimental and theoretical study of the interference properties of a single-photon source based on a In(Ga)As quantum dot embedded in a quasiplanar GaAs microcavity. Using resonant laser excitation with a pulse separation of 2 ns, we find near-perfect interference of the emitt...... in excitonic Rabi oscillations....

Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

Science.gov (United States)

Demir, Ilkay; Altuntas, Ismail; Bulut, Baris; Ezzedini, Maher; Ergun, Yuksel; Elagoz, Sezai

2018-05-01

We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced quasi two-dimensional electrons between 10 s pulsed growth n-doped InGaAs epilayers to improve both carrier concentration and mobility of structure by applying pulsed growth and doping methods towards increasing the Si dopant concentration in InGaAs. Additionally, the V/III ratio optimization under fixed group III source flow has been investigated with this new method to understand the effects on both crystalline quality and electrical properties of n-InGaAs epilayers. Finally, we have obtained high crystalline quality of n-InGaAs epilayers grown by 10 s pulsed as a contact layer with 2.8 × 1019 cm‑3 carrier concentration and 1530 cm2 V‑1 s‑1 mobility.

Anisotropic electro-optic effect on InGaAs quantum dot chain modulators.

Science.gov (United States)

Liu, Wei; Liang, Baolai; Huffaker, Diana; Fetterman, Harold

2013-10-15

We investigated the anisotropic electro-optic (EO) effect on InGaAs quantum dot (QD) chain modulators. The linear EO coefficients were determined as 24.3 pm/V (33.8 pm/V) along the [011] direction and 30.6 pm/V (40.3 pm/V) along the [011¯] direction at 1.55 μm (1.32 μm) operational wavelength. The corresponding half-wave voltages (Vπs) were measured to be 5.35 V (4.35 V) and 4.65 V (3.86 V) at 1.55 μm (1.32 μm) wavelength. This is the first report on the anisotropic EO effect on QD chain structures. These modulators have 3 dB bandwidths larger than 10 GHz.

Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers

International Nuclear Information System (INIS)

Kim, J. S.; Kim, E. K.; Hwang, H.; Park, K.; Yoon, E.; Park, I. W.; Park, Y. J.

2004-01-01

We have investigated the energy levels of InAs quantum dots (QDs) embedded in various barrier layers such as InP, InGaAs and GaAs by using deep level transient spectroscopy (DLTS) measurement. The apparent activation energy of 0.56 eV below the conduction band edge of barrier layers in the InAs/InP QD system was higher than 0.32 eV in the InAs/In 0.53 Ga 0.47 As QD system or 0.29 eV in the InAs/GaAs/In 0.53 Ga 0.47 As QD system, which was inserted in 10 mono-layers (MLs) GaAs between InAs QDs and the InGaAs barrier. The capture barrier heights of InAs QDs in the InAs/InP system was measured at more than about 0.18 eV, showing the existence of strain between QDs and barrier layers. The InAs/GaAs(10 MLs)/InGaAs system also showed about 0.12 eV capture barrier, but the InAs/InGaAs system has a very small barrier. This result might originate from the strain-relief effect due to InGaAs layers.

Observation of single quantum dots in GaAs/AlAs micropillar cavities

Energy Technology Data Exchange (ETDEWEB)

Burger, Philipp; Karl, Matthias; Hu, Dongzhi; Schaadt, Daniel M.; Kalt, Heinz; Hetterich, Michael [Institut fuer Angewandte Physik, Universitaet Karlsruhe (Germany); DFG Center for Functional Nanostructures (CFN), Karlsruhe (Germany)

2009-07-01

In our contribution we present the fabrication steps of micropillar cavities and their optical properties. The layer structure consisting of a GaAs-based lambda-cavity sandwiched between two GaAs/AlAs distributed Bragg reflectors is grown by molecular-beam epitaxy. In(Ga)As quantum dots, emitting at around 950 nm, are embedded as optically active medium in the middle of the cavity. The pillars are milled out of this structure with a focused ion-beam. A confocal micro-photoluminescence set-up allows to measure optical cavity modes as well as single quantum dots in the pillars when using low excitation intensity. This enables us to observe a (thermal) shift of the single quantum dot peaks relative to the cavity mode. In addition, we increased the numerical aperture of the set-up (originally 0.4) with a solid immersion lens up to 0.8. Thus we are able to detect the fundamental mode of pillars with very small diameters. Furthermore, the collection efficiency increases substantially.

Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

CERN Document Server

Shim, B R; Ota, T; Kobayashi, K; Maehashi, K; Nakashima, H; Lee, S Y

1999-01-01

We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In sub x Ga sub 1 sub - sub x As layers with x<= 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing...

Electrical Initialization of Electron and Nuclear Spins in a Single Quantum Dot at Zero Magnetic Field.

Science.gov (United States)

Cadiz, Fabian; Djeffal, Abdelhak; Lagarde, Delphine; Balocchi, Andrea; Tao, Bingshan; Xu, Bo; Liang, Shiheng; Stoffel, Mathieu; Devaux, Xavier; Jaffres, Henri; George, Jean-Marie; Hehn, Michel; Mangin, Stephane; Carrere, Helene; Marie, Xavier; Amand, Thierry; Han, Xiufeng; Wang, Zhanguo; Urbaszek, Bernhard; Lu, Yuan; Renucci, Pierre

2018-04-11

The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin-polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several microelectronvolts at zero magnetic field for the positively charged exciton (trion X + ) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field.

Linewidth statistics of single InGaAs quantum dot photolumincescence lines

DEFF Research Database (Denmark)

Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

2000-01-01

We have used photoluminescence spectroscopy with high spatial and spectral resolution to measure the linewidths of single emission lines from In0.5Ga0.5As/GaAs self-assembled quantum dots. At 10 K, we find a broad, asymmetric distribution of linewidths with a maximum at 50 mu eV. The distribution......-dot luminescence lines depends only weakly on temperature up to 50 K, showing a broadening of 0.4 mu eV/K. Above 50 K, a thermally activated behavior of the linewidth is observed. This temperature dependence is consistent with the discrete energy level structure of the dots....

Analysis of self-organized In(Ga)As quantum structures with the scanning transmission electron microscope; Analyse selbstorganisierter In(Ga)As-Quantenstrukturen mit dem Raster-Transmissionselektronenmikroskop

Energy Technology Data Exchange (ETDEWEB)

Sauerwald, Andres

2008-05-27

Aim of this thesis was to apply the analytical methods of the scanning transmission electron microscopy to the study of self-organized In(Ga)As quantum structures. With the imaging methods Z contrast and bright field (position resolutions in the subnanometer range) and especially with the possibilities of the quantitative chemical EELS analysis of the scanning transmission electron microscope (STEM) fundamental questions concerning morphology and chemical properties of self-organized quantum structures should be answered. By the high position resolution of the STEM among others essentail morphological and structural parameters in the growth behaviour of 'dot in a well' (DWell) structures and of vertically correlated quantum dots (QDs) could be analyzed. For the optimization of DWell structures samples were studied, the nominal InAs-QD growth position was directedly varied within the embedding InGaAs quantum wells. The STEM offers in connection with the EELS method a large potential for the chemical analysis of quantum structures. Studied was a sample series of self-organized InGaAs/GaAs structures on GaAs substrate, the stress of which was changed by varying the Ga content of the INGaAs material between 2.4 % and 4.3 %. [German] Ziel dieser Arbeit war es, die analytischen Methoden der Raster-Transmissionselektronenmikroskopie zur Untersuchung selbstorganisierter In(Ga)As-Quantenstrukturen anzuwenden. Mit den abbildenden Methoden Z-Kontrast und Hellfeld (Ortsaufloesungen im Subnanometerbereich) und insbesondere mit den Moeglichkeiten der quantitativen chemischen EELS-Analyse des Raster-Transmissionselektronenmikroskops (RTEMs) sollten grundsaetzliche Fragestellungen hinsichtlich der Morphologie und der chemischen Eigenschaften selbstorganisierter Quantenstrukturen beantwortet werden. Durch die hohe Ortsaufloesung des RTEMs konnten u.a. essentielle morphologische und strukturelle Parameter im Wachstumsverhalten von 'Dot in a Well

Extended wavelength InGaAs SWIR FPAs with high performance

Science.gov (United States)

Li, Xue; Li, Tao; Yu, Chunlei; Tang, Hengjing; Deng, Shuangyan; Shao, Xiumei; Zhang, Yonggang; Gong, Haimei

2017-09-01

The extended InGaAs short wavelength infrared (SWIR) detector covers 1.0-2.5 μm wavelength, which plays an important role in weather forecast, resource observation, low light level systems, and astronomical observation and so on. In order to fabricate the high performance extended InGaAs detector, materials structure and parameters were characterized with Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM), the spreading of minority carriers and lattice quality were obtained. Mesa etching process, etching damage restoration technique and low temperature passivation technique were used in the fabrication of the extended InGaAs detector. The improvement of material structure and device process was studied by fabricating and measuring different perimeter-to-area (P/A) photodiodes and singledevice, respectively. The dark current density of the extended InGaAs detector obviously was reduced, about 2 nA/cm2 at 170 K. The 512×256 FPAs were fabricated, the peak detectivity and the quantum efficiency of which are 5×1011 cmHz1/2/W and 80%, respectively. The staring image yielded of the 512×256 FPAs is shown, which demonstrates very good imaging quality.

Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10 to the -2nd to 10 to the 8 Hz

Science.gov (United States)

Liu, Shih-Ming J.; Das, Mukunda B.; Peng, Chin-Kun; Klem, John; Henderson, Timothy S.

1986-01-01

Equivalent gate noise voltage spectra of 1-micron gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the frequency range of 0.01 Hz to 100 MHz and commpared with the noise spectra of conventional AlGaAs/GaAs MODFET's and GaAs MESFET's. The prominent generation-recombination (g-r) noise bulge commonly observed in the vicinity of 10 kHz in conventional MODFET's at 300 K does not appear in the case of the new InGaAs quantum-well MODFET. Instead, its noise spectra indicate the presence of low-intensity multiple g-r noise components superimposed on a reduced 1/f noise. The LF noise intensity in the new device appears to be the lowest among those observed in any MODFET or MESFET. The noise spectra at 82 K in the new device represent nearly true 1/f noise. This unusual low-noise behavior of the new structure suggests the effectiveness of electron confinement in the quantum well that significantaly reduces electron trapping in the n-AlGaAs, and thus eliminates the g-r noise bulge observed in conventional MODFET's.

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

International Nuclear Information System (INIS)

Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

2006-01-01

The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

Mapping the Local Density of Optical States of a Photonic Crystal with Single Quantum Dots

DEFF Research Database (Denmark)

Wang, Qin; Stobbe, Søren; Lodahl, Peter

2011-01-01

We use single self-assembled InGaAs quantum dots as internal probes to map the local density of optical states of photonic crystal membranes. The employed technique separates contributions from nonradiative recombination and spin-flip processes by properly accounting for the role of the exciton...... fine structure. We observe inhibition factors as high as 70 and compare our results to local density of optical states calculations available from the literature, thereby establishing a quantitative understanding of photon emission in photonic crystal membranes. © 2011 American Physical Society....

Superconducting detectors for semiconductor quantum photonics

International Nuclear Information System (INIS)

Reithmaier, Guenther M.

2015-01-01

In this thesis we present the first successful on-chip detection of quantum light, thereby demonstrating the monolithic integration of superconducting single photon detectors with individually addressable semiconductor quantum dots in a prototypical quantum photonic circuit. Therefore, we optimized both the deposition of high quality superconducting NbN thin films on GaAs substrates and the fabrication of superconducting detectors and successfully integrated these novel devices with GaAs/AlGaAs ridge waveguides loaded with self-assembled InGaAs quantum dots.

Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

International Nuclear Information System (INIS)

Kuzmenkov, A. G.; Ustinov, V. M.; Sokolovskii, G. S.; Maleev, N. A.; Blokhin, S. A.; Deryagin, A. G.; Chumak, S. V.; Shulenkov, A. S.; Mikhrin, S. S.; Kovsh, A. R.; McRobbie, A. D.; Sibbett, W.; Cataluna, M. A.; Rafailov, E. U.

2007-01-01

The authors report the observation of strong self-pulsations in molecular-beam epitaxy-grown oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. At continuous-wave operation, self-pulsations with pulse durations of 100-300 ps and repetition rates of 0.2-0.6 GHz were measured. The average optical power of the pulsations was 0.5-1.0 mW at the laser continuous-wave current values of 1.5-2.5 mA

Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

Czech Academy of Sciences Publication Activity Database

Zíková, Markéta; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Hulicius, Eduard

2017-01-01

Roč. 464, Apr (2017), s. 59-63 ISSN 0022-0248 R&D Projects: GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : MOVPE * quantum dot * strain reducing layer * InAs * GaAsSb * InGaAs Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

Imaging surface plasmon polaritons using proximal self-assembled InGaAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Bracher, Gregor; Schraml, Konrad; Blauth, Mäx; Wierzbowski, Jakob; López, Nicolás Coca; Bichler, Max; Müller, Kai; Finley, Jonathan J.; Kaniber, Michael, E-mail: Michael.Kaniber@wsi.tum.de [Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany and Nanosystems Initiative Munich, Schellingstraße 4, 80799 München (Germany)

2014-07-21

We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiative processes do not play a major role for separations down to ∼10 nm. A polarized laser beam focused on one end of the plasmonic nanostructure generates propagating surface plasmon polaritons that, in turn, create electron-hole pairs in the GaAs substrate during propagation. These free carriers are subsequently captured by the quantum dots ∼25 nm below the surface, giving rise to luminescence. The intensity of the spectrally integrated quantum dot luminescence is used to image the propagating plasmon modes. As the waveguide width reduces from 5 μm to 1 μm, we clearly observe different plasmonic modes at the remote waveguide end, enabling their direct imaging in real space. This imaging technique is applied to a plasmonic beamsplitter facilitating the determination of the splitting ratio between the two beamsplitter output ports as the interaction length L{sub i} is varied. A splitting ratio of 50:50 is observed for L{sub i}∼9±1 μm and 1 μm wide waveguides for excitation energies close to the GaAs band edge. Our experimental findings are in good agreement with mode profile and finite difference time domain simulations for both waveguides and beamsplitters.

Bound states in continuum: Quantum dots in a quantum well

Energy Technology Data Exchange (ETDEWEB)

Prodanović, Nikola, E-mail: elnpr@leeds.ac.uk [Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom); Milanović, Vitomir [School of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade (Serbia); Ikonić, Zoran; Indjin, Dragan; Harrison, Paul [Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom)

2013-11-01

We report on the existence of a bound state in the continuum (BIC) of quantum rods (QR). QRs are novel elongated InGaAs quantum dot nanostructures embedded in the shallower InGaAs quantum well. BIC appears as an excited confined dot state and energetically above the bottom of a well subband continuum. We prove that high height-to-diameter QR aspect ratio and the presence of a quantum well are indispensable conditions for accommodating the BIC. QRs are unique semiconductor nanostructures, exhibiting this mathematical curiosity predicted 83 years ago by Wigner and von Neumann.

Reconstruction of original indium distribution in InGaAs quantum wells from experimental SIMS depth profiles

Energy Technology Data Exchange (ETDEWEB)

Kudriavtsev, Yu., E-mail: yuriyk@cinvestav.mx [Departamento Ingeniería Eléctrica – SEES, CINVESTAV-IPN, Av. IPN #2508, D.F., México (Mexico); Asomoza, R. [Departamento Ingeniería Eléctrica – SEES, CINVESTAV-IPN, Av. IPN #2508, D.F., México (Mexico); Gallardo-Hernandez, S.; Ramirez-Lopez, M.; Lopez-Lopez, M. [Departamento de Física, CINVESTAV-IPN, México (Mexico); Nevedomsky, V.; Moiseev, K. [Ioffe Physical Technical Institute, S-Petersburg (Russian Federation)

2014-11-15

Depth profiling analysis of InGaAs/GaAs hetero-structures grown by MBE on GaAs (0 0 1) substrates is reported. A novel two-step procedure for de-convolving experimental SIMS depth distribution is employed and the original In distribution in InGaAs quantum wells (QW) is estimated. The QW thickness calculated from the de-convolved profiles is shown to be in good agreement with the cross-sectional TEM images. The experimental In depth profile is shifted from the original In distribution due to the ion mixing process during depth profiling analysis. It is shown that the de-convolution procedure is suitable for reconstruction of the original QW width and depth by SIMS even for relatively high primary ion energies.

Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on artificially patterned GaAs (3 1 1)B substrates

NARCIS (Netherlands)

Selçuk, E.; Hamhuis, G.J.; Nötzel, R.

2009-01-01

Self-organized anisotropic strain engineering is combined with growth on artificially patterned GaAs (3 1 1)B substrates to realize complex lateral ordering of InGaAs and InAs quantum dots (QDs) guided by steps and facets generated along the pattern sidewalls. Depending on the pattern design, size,

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

OpenAIRE

Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

2016-01-01

InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the ...

A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode.

Science.gov (United States)

Kuhlmann, Andreas V; Houel, Julien; Brunner, Daniel; Ludwig, Arne; Reuter, Dirk; Wieck, Andreas D; Warburton, Richard J

2013-07-01

Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10(7) and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920-980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode

International Nuclear Information System (INIS)

Kuhlmann, Andreas V.; Houel, Julien; Warburton, Richard J.; Brunner, Daniel; Ludwig, Arne; Reuter, Dirk; Wieck, Andreas D.

2013-01-01

Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10 7 and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920–980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance

Nonequilibrium carrier dynamics in self-assembled InGaAs quantum dots

International Nuclear Information System (INIS)

Wesseli, M.; Ruppert, C.; Trumm, S.; Betz, M.; Krenner, H.J.; Finley, J.J.

2006-01-01

Carrier dynamics in InGaAs/GaAs quantum dots is analyzed with highly sensitive femtosecond transmission spectroscopy. In a first step, measurements on a large ensemble of nanoislands reveal the dynamical electronic filling of quantum dots from the surrounding wetting layer. Most interestingly, we find a spin-preserving phonon mediated scattering into fully localized states within a few picoseconds. Then, individual artificial atoms are isolated with metallic shadow masks. For the first time, a single self-assembled quantum dot is addressed in an ultrafast transmission experiment. We find bleaching signals in the order of 10 -5 that arise from individual interband transitions of one quantum dot. As a result, we have developed an ultrafast optical tool for both manipulation and read-out of a single self-assembled quantum dot. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Quantum optics with single quantum dot devices

International Nuclear Information System (INIS)

Zwiller, Valery; Aichele, Thomas; Benson, Oliver

2004-01-01

A single radiative transition in a single-quantum emitter results in the emission of a single photon. Single quantum dots are single-quantum emitters with all the requirements to generate single photons at visible and near-infrared wavelengths. It is also possible to generate more than single photons with single quantum dots. In this paper we show that single quantum dots can be used to generate non-classical states of light, from single photons to photon triplets. Advanced solid state structures can be fabricated with single quantum dots as their active region. We also show results obtained on devices based on single quantum dots

InGaAs focal plane array developments at III-V Lab

Science.gov (United States)

Rouvié, Anne; Reverchon, Jean-Luc; Huet, Odile; Djedidi, Anis; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Bria, Toufiq; Pires, Mauricio; Decobert, Jean; Costard, Eric

2012-06-01

SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. For few years, III-VLab has been studying InGaAs imagery, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has lead to put quickly on the market a 320x256 InGaAs module, exhibiting high performances in terms of dark current, uniformity and quantum efficiency. In this paper, we present the last developments achieved in our laboratory, mainly focused on increasing the pixels number to VGA format associated to pixel pitch decrease (15μm) and broadening detection spectrum toward visible wavelengths. Depending on targeted applications, different Read Out Integrated Circuits (ROIC) have been used. Low noise ROIC have been developed by CEA LETI to fit the requirements of low light level imaging whereas logarithmic ROIC designed by NIT allows high dynamic imaging adapted for automotive safety.

Life test of the InGaAs focal plane arrays detector for space applications

Science.gov (United States)

Zhu, Xian-Liang; Zhang, Hai-Yan; Li, Xue; Huang, Zhang-Cheng; Gong, Hai-Mei

2017-08-01

The short-wavelength infrared (SWIR) InGaAs focal plane array (FPA) detector consists of infrared detector chip, readout integrated circuit (ROIC), and flip-chip bonding interconnection by Indium bump. In order to satisfy space application requirements for failure rates or Mean Time to Failure (MTTF), which can only be demonstrated with the large number of detectors manufactured, the single pixel in InGaAs FPAs was chosen as the research object in this paper. The constant-stress accelerated life tests were carried out at 70°C 80°C 90°C and100°C. The failed pixels increased gradually during more than 14000 hours at each elevated temperatures. From the random failure data the activation energy was estimated to be 0.46eV, and the average lifetime of a single pixel in InGaAs FPAs was estimated to be longer than 1E+7h at the practical operating temperature (5°C).

Self-organized template formation for quantum dot ordering

International Nuclear Information System (INIS)

Noetzel, Richard; Mano, Takaaki; Wolter, Joachim H.

2004-01-01

Ordered arrays of quantum dots (QDs) are created by self-organized anisotropic strain engineering of (In,Ga)As/GaAs quantum wire (QWR) superlattice (SL) templates on exactly oriented GaAs (100) substrates by molecular beam epitaxy (MBE). The well-defined one-dimensional arrays of (In,Ga)As QDs formed on top of these templates due to local strain recognition are of excellent structural and optical quality up to room temperature. The QD arrays thus allow for fundamental studies and device operation principles based on single- and multiple carrier- and photon-, and coherent quantum interference effects

Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

Energy Technology Data Exchange (ETDEWEB)

Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T., E-mail: tobias.heindel@tu-berlin.de; Reitzenstein, S. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623 (Germany); Gaafar, M.; Vaupel, M.; Stolz, W.; Rahimi-Iman, A.; Koch, M. [Department of Physics and Materials Science Center, Philipps-Universität Marburg, 35032 Marburg (Germany)

2015-07-27

We report on the realization of a quantum dot (QD) based single-photon source with a record-high single-photon emission rate. The quantum light source consists of an InGaAs QD which is deterministically integrated within a monolithic microlens with a distributed Bragg reflector as back-side mirror, which is triggered using the frequency-doubled emission of a mode-locked vertical-external-cavity surface-emitting laser (ML-VECSEL). The utilized compact and stable laser system allows us to excite the single-QD microlens at a wavelength of 508 nm with a pulse repetition rate close to 500 MHz at a pulse width of 4.2 ps. Probing the photon statistics of the emission from a single QD state at saturation, we demonstrate single-photon emission of the QD-microlens chip with g{sup (2)}(0) < 0.03 at a record-high single-photon flux of (143 ± 16) MHz collected by the first lens of the detection system. Our approach is fully compatible with resonant excitation schemes using wavelength tunable ML-VECSELs, which will optimize the quantum optical properties of the single-photon emission in terms of photon indistinguishability.

Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

NARCIS (Netherlands)

Fiore, A.; Rossetti, M.; Alloing, B.; Paranthoën, C.; Chen, J.X.; Geelhaar, L.; Riechert, H.

2004-01-01

We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we

Ordered quantum-ring chains grown on a quantum-dot superlattice template

International Nuclear Information System (INIS)

Wu Jiang; Wang, Zhiming M.; Holmes, Kyland; Marega, Euclydes; Mazur, Yuriy I.; Salamo, Gregory J.

2012-01-01

One-dimensional ordered quantum-ring chains are fabricated on a quantum-dot superlattice template by molecular beam epitaxy. The quantum-dot superlattice template is prepared by stacking multiple quantum-dot layers and quantum-ring chains are formed by partially capping quantum dots. Partially capping InAs quantum dots with a thin layer of GaAs introduces a morphological change from quantum dots to quantum rings. The lateral ordering is introduced by engineering the strain field of a multi-layer InGaAs quantum-dot superlattice.

Controlling the aspect ratio of quantum dots: from columnar dots to quantum rods

NARCIS (Netherlands)

Li, L.; Patriarche, G.; Chauvin, N.J.G.; Ridha, P.; Rossetti, M.; Andrzejewski, J.; Sek, G.; Misiewicz, J.; Fiore, A.

2008-01-01

We demonstrate the feasibility and flexibility of artificial shape engineering of epitaxial semiconductor nanostructures. Novel nanostructures including InGaAs quantum rods (QRs), nanocandles, and quantum dots (QDs)-in-rods were realized on a GaAs substrate. They were formed by depositing a

Strained quantum well photovoltaic energy converter

Science.gov (United States)

Freundlich, Alexandre (Inventor); Renaud, Philippe (Inventor); Vilela, Mauro Francisco (Inventor); Bensaoula, Abdelhak (Inventor)

1998-01-01

An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

Coulomb Mediated Hybridization of Excitons in Coupled Quantum Dots.

Science.gov (United States)

Ardelt, P-L; Gawarecki, K; Müller, K; Waeber, A M; Bechtold, A; Oberhofer, K; Daniels, J M; Klotz, F; Bichler, M; Kuhn, T; Krenner, H J; Machnikowski, P; Finley, J J

2016-02-19

We report Coulomb mediated hybridization of excitonic states in optically active InGaAs quantum dot molecules. By probing the optical response of an individual quantum dot molecule as a function of the static electric field applied along the molecular axis, we observe unexpected avoided level crossings that do not arise from the dominant single-particle tunnel coupling. We identify a new few-particle coupling mechanism stemming from Coulomb interactions between different neutral exciton states. Such Coulomb resonances hybridize the exciton wave function over four different electron and hole single-particle orbitals. Comparisons of experimental observations with microscopic eight-band k·p calculations taking into account a realistic quantum dot geometry show good agreement and reveal that the Coulomb resonances arise from broken symmetry in the artificial semiconductor molecule.

Realization of electrically tunable single quantum dot nanocavities

Energy Technology Data Exchange (ETDEWEB)

Hofbauer, Felix Florian Georg

2009-03-15

We investigated the design, fabrication and optical investigation of electrically tunable single quantum dot-photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. We demonstrate that the quantum confined Stark effect can be employed to quickly and reversibly switch the dot-cavity coupling, simply by varying a gate voltage. Our results show that exciton transitions from individual dots can be tuned by up to {proportional_to}4 meV relative to the nanocavity mode, before the emission quenches due to carrier tunneling escape from the dots. We directly probe spontaneous emission, irreversible polariton decay and the statistics of the emitted photons from a single-dot nanocavity in the weak and strong coupling regimes. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the first time. The structures investigated are p-i-n photodiodes consisting of an 180nm thick free-standing GaAs membrane into which a two dimensional photonic crystal is formed by etching a triangular lattice of air holes. Low mode volume nanocavities (V{sub mode}<1.6 ({lambda}/n){sup 3}) are realized by omitting 3 holes in a line to form L3 cavities and a single layer of InGaAs self-assembled quantum dots is embedded into the midpoint of the membrane. The nanocavities are electrically contacted via 35 nm thick p- and n-doped contact layers in the GaAs membrane. In the weak coupling regime, time resolved spectroscopy reveals a {proportional_to}7 x shortening of the spontaneous emission lifetime as the dot is tuned through the nanocavity mode, due to the Purcell effect. Upon strongly detuning the same quantum dot transition from the nanocavity mode we observe an additional {proportional_to}8 x lengthening of the spontaneous emission lifetime. These observations unequivocally highlight two regimes of dot

The electron-nuclear spin system in (In,Ga)As quantum dots

International Nuclear Information System (INIS)

Auer, Thomas

2008-01-01

For a long time, the nuclear spins in quantum dots were virtually ignored. It was thought that the interaction strength was so small that the interaction between the nuclei and electrons could only be observed under very specific optical pumping conditions. Then, in the pursuit of long living electron spins as a building block for quantum information storage and processing, their destructive action on the lifetime of the electron spin became apparent. The nuclear spin system increasingly gained the attention of the quantum dot community. It seemed that the randomly oriented, fluctuating nuclear spins can only be counteracted by strong magnetic fields suppressing the depolarising effect of the random nuclear spin fluctuation fields on a single electron spin. Gradually, however, the work done thirty years before on the electron-nuclear spin system in bulk semiconductors attracted the notice of scientists again. Some of the old experiments could be performed with quantum dots as well. It could be shown that the nuclear spins in quantum dots may well be polarised by optical orientation and that their action is not always destructive at all. The nuclear spins in quantum dots are increasingly used in order to create and tailor a specific environment for a single electron in a quantum dot. In this way quantum dots contain their own ''nuclear nanomagnet''. This might be the future of the studies on the electron-nuclear spin system. The aim of this work is to shed some more light on the complex interdependent system formed of an electron spin and the nuclear spin ensemble in quantum dots. The effects are manifold, often unexpected, sometimes miraculous. Nevertheless, I believe that this work is another tiny step towards the understanding of this challenging system. I have shown that the randomly polarised nuclear spin system always affects the electron spin of a single electron in quantum dots. Further we have seen, however, that the nuclear spin system can easily be

Negative differential resistance of InGaAs dual channel transistors

International Nuclear Information System (INIS)

Sugaya, T; Yamane, T; Hori, S; Komori, K; Yonei, K

2006-01-01

We demonstrate a new type of velocity modulation transistor (VMT) with an InGaAs dual channel structure fabricated on an InP (001) substrate. The dual channel structure consists of a high mobility 10 nm In 0.53 Ga 0.47 As quantum well, a 2 nm In 0.52 Al 0.48 As barrier layer, and a low mobility 1 nm In 0.26 Ga 0.74 As quantum well. The VMTs have a negative differential resistance (NDR) effect with a low source-drain voltage of 0.38 V. The NDR characteristics can be clearly seen in the temperature range of 50 to 220 K with a gate voltage of 5 V. The NDR mechanism is thought to be the carrier transfer from the high mobility to the low mobility channels. Three-terminal VMTs are favorable for applications to highfrequency, high-speed, and low-power consumption devices

Optical and electronic properties of InGaAs and nitride quantum dots

Energy Technology Data Exchange (ETDEWEB)

Baer, N.

2006-06-15

In the present thesis, the electronic and optical properties of such nanostructures have been investigated for the well established III-V and the new group-III nitride material system. The influence of Coulomb correlations on the optical spectra of InGaAs QDs are studied using a full configuration interaction approach. The resulting multi-exciton spectra for up to twelve excitons are investigated in detail. Characteristic features of the spectra are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Additionally, we study the electronic and optical properties of self-assembled InN/GaN quantum dots. The existence of an exactly degenerate p-shell is discussed in detail. Dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for configuration interaction calculations. We present multi-exciton emission spectra and investigate how Coulomb correlations and oscillator strengths are altered by the built-in electrostatic fields present in these structures. From our results, we predict vanishing exciton and biexciton ground state emission for small lens-shaped dots, which is explained by a careful analysis of the underlying symmetry group. To study the photoluminescence dynamics of an initially excited QD system, we employ a microscopic semiconductor theory. Carrier-carrier correlations beyond the Hartee-Fock level are included within a cluster expansion truncation scheme up to the singlet-doublet level. The influence of these correlations on the spectrum and the photoluminescence dynamics is investigated for the emission into free space as well as for QDs embedded in an optical microcavity. (orig.)

Optical and electronic properties of InGaAs and nitride quantum dots

International Nuclear Information System (INIS)

Baer, N.

2006-06-01

In the present thesis, the electronic and optical properties of such nanostructures have been investigated for the well established III-V and the new group-III nitride material system. The influence of Coulomb correlations on the optical spectra of InGaAs QDs are studied using a full configuration interaction approach. The resulting multi-exciton spectra for up to twelve excitons are investigated in detail. Characteristic features of the spectra are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Additionally, we study the electronic and optical properties of self-assembled InN/GaN quantum dots. The existence of an exactly degenerate p-shell is discussed in detail. Dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for configuration interaction calculations. We present multi-exciton emission spectra and investigate how Coulomb correlations and oscillator strengths are altered by the built-in electrostatic fields present in these structures. From our results, we predict vanishing exciton and biexciton ground state emission for small lens-shaped dots, which is explained by a careful analysis of the underlying symmetry group. To study the photoluminescence dynamics of an initially excited QD system, we employ a microscopic semiconductor theory. Carrier-carrier correlations beyond the Hartee-Fock level are included within a cluster expansion truncation scheme up to the singlet-doublet level. The influence of these correlations on the spectrum and the photoluminescence dynamics is investigated for the emission into free space as well as for QDs embedded in an optical microcavity. (orig.)

Single-electron quantum tomography in quantum Hall edge channels

International Nuclear Information System (INIS)

Grenier, Ch; Degiovanni, P; Herve, R; Bocquillon, E; Parmentier, F D; Placais, B; Berroir, J M; Feve, G

2011-01-01

We propose a quantum tomography protocol to measure single-electron coherence in quantum Hall edge channels, and therefore access for the first time the wavefunction of single-electron excitations propagating in ballistic quantum conductors. Its implementation would open the way to quantitative studies of single-electron decoherence and would provide a quantitative tool for analyzing single- to few-electron sources. We show how this protocol could be implemented using ultrahigh-sensitivity noise measurement schemes.

Active quenching circuit for a InGaAs single-photon avalanche diode

International Nuclear Information System (INIS)

Zheng Lixia; Wu Jin; Xi Shuiqing; Shi Longxing; Liu Siyang; Sun Weifeng

2014-01-01

We present a novel gated operation active quenching circuit (AQC). In order to simulate the quenching circuit a complete SPICE model of a InGaAs SPAD is set up according to the I–V characteristic measurement results of the detector. The circuit integrated with aROIC (readout integrated circuit) is fabricated in an CSMC 0.5 μm CMOS process and then hybrid packed with the detector. Chip measurement results show that the functionality of the circuit is correct and the performance is suitable for practical system applications. (semiconductor integrated circuits)

Single photon sources with single semiconductor quantum dots

Science.gov (United States)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

Group-III vacancy induced InxGa1-xAs quantum dot interdiffusion

International Nuclear Information System (INIS)

Djie, H. S.; Wang, D.-N.; Ooi, B. S.; Hwang, J. C. M.; Gunawan, O.

2006-01-01

The impact of group-III vacancy diffusion, generated during dielectric cap induced intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs/GaAs quantum-dot structure is investigated. We use a three-dimensional quantum-dot diffusion model and photoluminescence data to determine the thermal and the interdiffusion properties of the quantum dot. The band gap energy variation related to the dot uniformity is found to be dominantly affected by the height fluctuation. A group-III vacancies migration energy H m for InGaAs quantum dots of 1.7 eV was deduced. This result is similar to the value obtained from the bulk and GaAs/AlGaAs quantum-well materials confirming the role of SiO 2 capping enhanced group-III vacancy induced interdiffusion in the InGaAs quantum dots

Linearly polarized emission from an embedded quantum dot using nanowire morphology control.

Science.gov (United States)

Foster, Andrew P; Bradley, John P; Gardner, Kirsty; Krysa, Andrey B; Royall, Ben; Skolnick, Maurice S; Wilson, Luke R

2015-03-11

GaAs nanowires with elongated cross sections are formed using a catalyst-free growth technique. This is achieved by patterning elongated nanoscale openings within a silicon dioxide growth mask on a (111)B GaAs substrate. It is observed that MOVPE-grown vertical nanowires with cross section elongated in the [21̅1̅] and [1̅12] directions remain faithful to the geometry of the openings. An InGaAs quantum dot with weak radial confinement is realized within each nanowire by briefly introducing indium into the reactor during nanowire growth. Photoluminescence emission from an embedded nanowire quantum dot is strongly linearly polarized (typically >90%) with the polarization direction coincident with the axis of elongation. Linearly polarized PL emission is a result of embedding the quantum dot in an anisotropic nanowire structure that supports a single strongly confined, linearly polarized optical mode. This research provides a route to the bottom-up growth of linearly polarized single photon sources of interest for quantum information applications.

Parallel quantum computing in a single ensemble quantum computer

International Nuclear Information System (INIS)

Long Guilu; Xiao, L.

2004-01-01

We propose a parallel quantum computing mode for ensemble quantum computer. In this mode, some qubits are in pure states while other qubits are in mixed states. It enables a single ensemble quantum computer to perform 'single-instruction-multidata' type of parallel computation. Parallel quantum computing can provide additional speedup in Grover's algorithm and Shor's algorithm. In addition, it also makes a fuller use of qubit resources in an ensemble quantum computer. As a result, some qubits discarded in the preparation of an effective pure state in the Schulman-Varizani and the Cleve-DiVincenzo algorithms can be reutilized

Limitations of In(Ga)As/GaAs quantum dot growth

International Nuclear Information System (INIS)

Lenz, Andrea; Timm, Rainer; Eisele, Holger; Ivanova, Lena; Sellin, Roman L.; Pohl, Udo W.; Bimberg, Dieter; Daehne, Mario; Liu, Huiyun; Hopkinson, Mark

2008-01-01

Large In(Ga)As/GaAs quantum dots (QDs) with an emission wavelength of 1.3 μm are of widespread interest for devices in optoelectronics. Two different growth strategies to achieve those larger QDs are - among others - the overgrowth with a strain-reducing InGaAs layer or the growth of InAs QDs within InGaAs quantum wells. Using cross-sectional scanning tunneling microscopy (XSTM) we studied such In(Ga)As QD samples grown with MOCVD and MBE. In both cases the intended size increase of the QDs is confirmed, but it is accompanied by some QDs containing a material hole, and hence will not contribute to the luminescence. We present atomically-resolved XSTM images of these defects and discuss the similarities and differences between the two samples. In addition, we developed growth models considering the strain and the limited growth kinetics during capping, demonstrating the limits of larger QD growth

Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors

International Nuclear Information System (INIS)

Zimmermann, Lars; John, Joachim; Degroote, Stefan; Borghs, Gustaaf; Hoof, Chris van; Nemeth, Stefan

2003-01-01

We conducted an experimental study of back-side-illuminated InGaAs photodiodes grown on GaAs and sensitive in the short-wave infrared up to 2.4 μm. Standard metamorphic InGaAs or IR-transparent InAlAs buffers were grown by molecular-beam epitaxy. We studied dark current and photocurrent as a function of buffer thickness, buffer material, and temperature. A saturation of the dark current with buffer thickness was not observed. The maximum resistance area product was ∼10 Ω cm2 at 295 K. The dark current above 200 K was dominated by generation-recombination current. A pronounced dependence of the photocurrent on the buffer thickness was observed. The peak external quantum efficiency was 46% (at 1.6 μm) without antireflective coating

A single-atom quantum memory.

Science.gov (United States)

Specht, Holger P; Nölleke, Christian; Reiserer, Andreas; Uphoff, Manuel; Figueroa, Eden; Ritter, Stephan; Rempe, Gerhard

2011-05-12

The faithful storage of a quantum bit (qubit) of light is essential for long-distance quantum communication, quantum networking and distributed quantum computing. The required optical quantum memory must be able to receive and recreate the photonic qubit; additionally, it must store an unknown quantum state of light better than any classical device. So far, these two requirements have been met only by ensembles of material particles that store the information in collective excitations. Recent developments, however, have paved the way for an approach in which the information exchange occurs between single quanta of light and matter. This single-particle approach allows the material qubit to be addressed, which has fundamental advantages for realistic implementations. First, it enables a heralding mechanism that signals the successful storage of a photon by means of state detection; this can be used to combat inevitable losses and finite efficiencies. Second, it allows for individual qubit manipulations, opening up avenues for in situ processing of the stored quantum information. Here we demonstrate the most fundamental implementation of such a quantum memory, by mapping arbitrary polarization states of light into and out of a single atom trapped inside an optical cavity. The memory performance is tested with weak coherent pulses and analysed using full quantum process tomography. The average fidelity is measured to be 93%, and low decoherence rates result in qubit coherence times exceeding 180  microseconds. This makes our system a versatile quantum node with excellent prospects for applications in optical quantum gates and quantum repeaters.

Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

Science.gov (United States)

Löbl, Matthias C.; Söllner, Immo; Javadi, Alisa; Pregnolato, Tommaso; Schott, Rüdiger; Midolo, Leonardo; Kuhlmann, Andreas V.; Stobbe, Søren; Wieck, Andreas D.; Lodahl, Peter; Ludwig, Arne; Warburton, Richard J.

2017-10-01

We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a 162.5 -nm -thin diode structure. The quantum dots are just 88 nm from the top GaAs surface. We design and realize a p -i -n -i -n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below 2 μ eV , just a factor of 2 above the transform limit. Clear optical spin pumping is observed in a magnetic field of 0.5 T in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots—highly coherent single-photon generation, ultrafast optical spin manipulation—in the thin diodes required in quantum nanophotonics and nanophononics applications.

Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Kalyuzhnyy, N. A.; Nadtochiy, A. M.; Maximov, M. V. [St. Petersburg Academic University (Russian Federation); Rouvimov, S. S. [University of Notre Dame (United States); Zhukov, A. E. [St. Petersburg Academic University (Russian Federation)

2017-03-15

The deposition of In{sub x}Ga{sub 1–x}As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal average In{sub x}Ga{sub 1–x}As thicknesses and compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.

Self-organized quantum rings : Physical characterization and theoretical modeling

NARCIS (Netherlands)

Fomin, V.M.; Gladilin, V.N.; Devreese, J.T.; Koenraad, P.M.; Fomin, V.M.

2014-01-01

An adequate modeling of the self-organized quantum rings is possible only on the basis of the modern characterization of those nanostructures.We discuss an atomic-scale analysis of the indium distribution of self-organized InGaAs quantum rings (QRs). The analysis of the shape, size and composition

Raman Scattering analysis of InGaAs and AlGaAs superlattices grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Oeztuerk, N.; Bahceli, S.

2010-01-01

InGaAs/GaAs and AlGaAs/GaAs multiple quantum well structures were grown by molecular beam epitaxy and investigated by X-ray diffraction and micro Raman spectroscopy. Phonon modes are investigated in backscattering from (001) surface. In the measured micro Raman spectrum for both structure, phonon peaks can be resolved for GaAs. These are longitudinal optical (LO) mode at 293 cm - 1 and 294 cm - 1 for InGaAs and AlGaAs, respectively.

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.

Science.gov (United States)

Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

2012-02-07

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.

Metamorphic quantum dots: Quite different nanostructures

International Nuclear Information System (INIS)

Seravalli, L.; Frigeri, P.; Nasi, L.; Trevisi, G.; Bocchi, C.

2010-01-01

In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantum dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.

Single-server blind quantum computation with quantum circuit model

Science.gov (United States)

Zhang, Xiaoqian; Weng, Jian; Li, Xiaochun; Luo, Weiqi; Tan, Xiaoqing; Song, Tingting

2018-06-01

Blind quantum computation (BQC) enables the client, who has few quantum technologies, to delegate her quantum computation to a server, who has strong quantum computabilities and learns nothing about the client's quantum inputs, outputs and algorithms. In this article, we propose a single-server BQC protocol with quantum circuit model by replacing any quantum gate with the combination of rotation operators. The trap quantum circuits are introduced, together with the combination of rotation operators, such that the server is unknown about quantum algorithms. The client only needs to perform operations X and Z, while the server honestly performs rotation operators.

Large quantum dots with small oscillator strength

DEFF Research Database (Denmark)

Stobbe, Søren; Schlereth, T.W.; Höfling, S.

2010-01-01

We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots...... is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size assuming a quantum-dot confinement given by a parabolic in-plane potential and a hard-wall vertical potential and predict a very large...... intermixing inside the quantum dots....

The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

CERN Document Server

Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

1999-01-01

Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

Widely Tunable High-Power Tapered Diode Laser at 1060 nm

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Sumpf, Bernd; Erbert, Götz

2011-01-01

We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser...... operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range....

Growth and characterization of InGaAs based nanowire-heterostructures

International Nuclear Information System (INIS)

Treu, Julian Pascal

2017-01-01

In this thesis we investigate III-V semiconductor nanowires integrated on silicon. Focusing on InGaAs-based heterostructures, we use molecular beam epitaxy (MBE) to obtain high purity material without the use of foreign metal catalysts such as gold. Instead of catalystassisted growth we use selective-area growth using prepatterned SiO 2 /Si(111) substrates prepared by improved nanoimprint lithography, resulting in highly periodic large scale arrays (1 x 1 cm 2 ) of vertically aligned nanowires with hexagonal cross-section. Studying the influence of the main growth parameter substrate temperature, arsenic- and III-material flux we systematically optimize yield and aspect ratio of InAs nanowires for different spacings. Capitalizing on the superior morphological homogeneity of arrays with more than 90% yield, we study their use as efficient surface emitters in the Terahertz regime and find excellent performance, clearly outperforming state-of the art bulk material, when taking the surface coverage into account. Furthermore, we explore nanowires with strongly reduced diameter, where adapted growth conditions result in dimensions as small as 20 nm, well within a quantum confined regime. Starting from optimized high-temperature InAs growth, we further investigate incorporation of gallium for composition tuned ternary InGaAs structures. Delineating the optimized growth parameter space we are able to address nearly the entire compositional range up to more than 80% Ga. Correlating X-ray diffraction, transmission electron microscopy (TEM) and micro-photoluminescence spectroscopy, we find a characteristic transition in crystal structure from wurtzite to zincblende dominated phase for intermediate Ga-content, a regime with luminescence mainly limited by compositional inhomogeneities, while structural defects prevail according linewidths of In- and Ga-rich samples. Furthermore, this successfully demonstrates position-controlled integration of InGaAs nanowires with composition

Entanglement and quantum superposition induced by a single photon

Science.gov (United States)

Lü, Xin-You; Zhu, Gui-Lei; Zheng, Li-Li; Wu, Ying

2018-03-01

We predict the occurrence of single-photon-induced entanglement and quantum superposition in a hybrid quantum model, introducing an optomechanical coupling into the Rabi model. Originally, it comes from the photon-dependent quantum property of the ground state featured by the proposed hybrid model. It is associated with a single-photon-induced quantum phase transition, and is immune to the A2 term of the spin-field interaction. Moreover, the obtained quantum superposition state is actually a squeezed cat state, which can significantly enhance precision in quantum metrology. This work offers an approach to manipulate entanglement and quantum superposition with a single photon, which might have potential applications in the engineering of new single-photon quantum devices, and also fundamentally broaden the regime of cavity QED.

Measurement of a heavy-hole hyperfine interaction in InGaAs quantum dots using resonance fluorescence.

Science.gov (United States)

Fallahi, P; Yilmaz, S T; Imamoğlu, A

2010-12-17

We measure the strength and the sign of hyperfine interaction of a heavy hole with nuclear spins in single self-assembled quantum dots. Our experiments utilize the locking of a quantum dot resonance to an incident laser frequency to generate nuclear spin polarization. By monitoring the resulting Overhauser shift of optical transitions that are split either by electron or exciton Zeeman energy with respect to the locked transition using resonance fluorescence, we find that the ratio of the heavy-hole and electron hyperfine interactions is -0.09 ± 0.02 in three quantum dots. Since hyperfine interactions constitute the principal decoherence source for spin qubits, we expect our results to be important for efforts aimed at using heavy-hole spins in quantum information processing.

Low dark current InGaAs detector arrays for night vision and astronomy

Science.gov (United States)

MacDougal, Michael; Geske, Jon; Wang, Chad; Liao, Shirong; Getty, Jonathan; Holmes, Alan

2009-05-01

Aerius Photonics has developed large InGaAs arrays (1K x 1K and greater) with low dark currents for use in night vision applications in the SWIR regime. Aerius will present results of experiments to reduce the dark current density of their InGaAs detector arrays. By varying device designs and passivations, Aerius has achieved a dark current density below 1.0 nA/cm2 at 280K on small-pixel, detector arrays. Data is shown for both test structures and focal plane arrays. In addition, data from cryogenically cooled InGaAs arrays will be shown for astronomy applications.

The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

International Nuclear Information System (INIS)

Moldavskaya, L. D.; Vostokov, N. V.; Gaponova, D. M.; Danil'tsev, V. M.; Drozdov, M. N.; Drozdov, Yu. N.; Shashkin, V. I.

2008-01-01

A new possibility for growing InAs/GaAs quantum dot heterostructures for infrared photoelectric detectors by metal-organic vapor-phase epitaxy is discussed. The specific features of the technological process are the prolonged time of growth of quantum dots and the alternation of the low-and high-temperature modes of overgrowing the quantum dots with GaAs barrier layers. During overgrowth, large-sized quantum dots are partially dissolved, and the secondary InGaAs quantum well is formed of the material of the dissolved large islands. In this case, a sandwich structure is formed. In this structure, quantum dots are arranged between two thin layers with an increased content of indium, namely, between the wetting InAs layer and the secondary InGaAs layer. The height of the quantum dots depends on the thickness of the GaAs layer grown at a comparatively low temperature. The structures exhibit intraband photoconductivity at a wavelength around 4.5 μm at temperatures up to 200 K. At 90 K, the photosensitivity is 0.5 A/W, and the detectivity is 3 x 10 9 cm Hz 1/2 W -1

Attacking quantum key distribution with single-photon two-qubit quantum logic

International Nuclear Information System (INIS)

Shapiro, Jeffrey H.; Wong, Franco N. C.

2006-01-01

The Fuchs-Peres-Brandt (FPB) probe realizes the most powerful individual attack on Bennett-Brassard 1984 quantum key distribution (BB84 QKD) by means of a single controlled-NOT (CNOT) gate. This paper describes a complete physical simulation of the FPB-probe attack on polarization-based BB84 QKD using a deterministic CNOT constructed from single-photon two-qubit quantum logic. Adding polarization-preserving quantum nondemolition measurements of photon number to this configuration converts the physical simulation into a true deterministic realization of the FPB attack

InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

DEFF Research Database (Denmark)

Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

2003-01-01

-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour......Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum...

Semi-quantum Dialogue Based on Single Photons

Science.gov (United States)

Ye, Tian-Yu; Ye, Chong-Qiang

2018-02-01

In this paper, we propose two semi-quantum dialogue (SQD) protocols by using single photons as the quantum carriers, where one requires the classical party to possess the measurement capability and the other does not have this requirement. The security toward active attacks from an outside Eve in the first SQD protocol is guaranteed by the complete robustness of present semi-quantum key distribution (SQKD) protocols, the classical one-time pad encryption, the classical party's randomization operation and the decoy photon technology. The information leakage problem of the first SQD protocol is overcome by the classical party' classical basis measurements on the single photons carrying messages which makes him share their initial states with the quantum party. The security toward active attacks from Eve in the second SQD protocol is guaranteed by the classical party's randomization operation, the complete robustness of present SQKD protocol and the classical one-time pad encryption. The information leakage problem of the second SQD protocol is overcome by the quantum party' classical basis measurements on each two adjacent single photons carrying messages which makes her share their initial states with the classical party. Compared with the traditional information leakage resistant QD protocols, the advantage of the proposed SQD protocols lies in that they only require one party to have quantum capabilities. Compared with the existing SQD protocol, the advantage of the proposed SQD protocols lies in that they only employ single photons rather than two-photon entangled states as the quantum carriers. The proposed SQD protocols can be implemented with present quantum technologies.

Tuning Single Quantum Dot Emission with a Micromirror.

Science.gov (United States)

Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul

2018-02-14

The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.

On single-time reduction in quantum field theory

International Nuclear Information System (INIS)

Arkhipov, A.A.

1984-01-01

It is shown, how the causality and spectrality properties in qUantum field theory may help one to carry out a single-time reduction of the Bethe-Salpeter wave fUnction. The single-time reduction technique is not based on any concrete model of the quantum field theory. Axiomatic formulations underline the quantum field theory

Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system

Directory of Open Access Journals (Sweden)

Adenilson José Chiquito

2004-09-01

Full Text Available A systematic investigation of the properties of the InAs/GaAs self-assembled quantum dots (SAQDs system subjected to a post-growth annealing using capacitance-voltage, Raman scattering and photoluminescence measurements is presented. The application of both electrical and optical methods allowed us to obtain reliable information on the microscopic structural evolution of this system. The single layer and the multilayer quantum dots were found to respond differently to the annealing process, due to the differences in strain that occur in both systems. The diffusion activated by strain provoked the appearance of an InGaAs alloy layer in substitution to the quantum dots layers; this change occurred at the annealing temperature T = 600 ºC in the multilayer system. A single dot layer, however, was observed even after the annealing at T = 700 ºC. Moreover, the low temperature annealing was found to improve the homogeneity of the multilayer system and to decrease the electrical interlayer coupling.

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

Science.gov (United States)

Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao

2017-12-11

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

Energy Technology Data Exchange (ETDEWEB)

Laucht, Arne; Villas-Boas, Jose M.; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany)

2010-07-01

We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nanocavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nanocavity mode. Photoluminescence measurements show a characteristic triple peak during the double anticrossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced.

Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

Energy Technology Data Exchange (ETDEWEB)

Villas-Boas, Jose M. [Universidade Federal de Uberlandia (UFU), MG (Brazil). Inst. de Fisica; Laucht, Arne; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Technische Universitaet Muenchen, Garching (Germany). Walter Schottky Inst.

2011-07-01

Full text. We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nano cavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nano cavity mode. Photoluminescence measurements show a characteristic triple peak during the double anti crossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced

Thermal stability studies on atomically clean and sulphur passivated InGaAs surfaces

Energy Technology Data Exchange (ETDEWEB)

Chauhan, Lalit; Hughes, Greg [School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9 (Ireland)

2013-03-15

High resolution synchrotron radiation core level photoemission measurements have been used to study the high temperature stability of sulphur passivated InGaAs surfaces and comparisons made with atomically clean surfaces subjected to the same annealing temperatures. Sulphur passivation of clean InGaAs surfaces prepared by the thermal removal of an arsenic capping layer was carried out using an in situ molecular sulphur treatment in ultra high vacuum. The elemental composition of the surfaces of these materials was measured at a series of annealing temperatures up to 530 C. Following a 480 C anneal In:Ga ratio was found to have dropped by 33% on sulphur passivated surface indicating a significant loss of indium, while no drop in indium signal was recorded at this temperature on the atomically InGaAs surface. No significant change in the As surface concentration was measured at this temperature. These results reflect the reduced thermal stability of the sulphur passivated InGaAs compared to the atomically clean surface which has implications for device fabrication. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Universal quantum gates on electron-spin qubits with quantum dots inside single-side optical microcavities.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2014-01-13

We present some compact quantum circuits for a deterministic quantum computing on electron-spin qubits assisted by quantum dots inside single-side optical microcavities, including the CNOT, Toffoli, and Fredkin gates. They are constructed by exploiting the giant optical Faraday rotation induced by a single-electron spin in a quantum dot inside a single-side optical microcavity as a result of cavity quantum electrodynamics. Our universal quantum gates have some advantages. First, all the gates are accomplished with a success probability of 100% in principle. Second, our schemes require no additional electron-spin qubits and they are achieved by some input-output processes of a single photon. Third, our circuits for these gates are simple and economic. Moreover, our devices for these gates work in both the weak coupling and the strong coupling regimes, and they are feasible in experiment.

Tunable single quantum dot nanocavities for cavity QED experiments

International Nuclear Information System (INIS)

Kaniber, M; Laucht, A; Neumann, A; Bichler, M; Amann, M-C; Finley, J J

2008-01-01

We present cavity quantum electrodynamics experiments performed on single quantum dots embedded in two-dimensional photonic crystal nanocavities. We begin by describing the structural and optical properties of the quantum dot sample and the photonic crystal nanocavities and compare the experimental results with three-dimensional calculations of the photonic properties. The influence of the tailored photonic environment on the quantum dot spontaneous emission dynamics is studied using spectrally and spatially dependent time-resolved spectroscopy. In ensemble and single dot measurements we show that the photonic crystals strongly enhance the photon extraction efficiency and, therefore, are a promising concept for realizing efficient single-photon sources. Furthermore, we demonstrate single-photon emission from an individual quantum dot that is spectrally detuned from the cavity mode. The need for controlling the spectral dot-cavity detuning is discussed on the basis of shifting either the quantum dot emission via temperature tuning or the cavity mode emission via a thin film deposition technique. Finally, we discuss the recently discovered non-resonant coupling mechanism between quantum dot emission and cavity mode for large detunings which drastically lowers the purity of single-photon emission from dots that are spectrally coupled to nanocavity modes.

Single-ion quantum lock-in amplifier.

Science.gov (United States)

Kotler, Shlomi; Akerman, Nitzan; Glickman, Yinnon; Keselman, Anna; Ozeri, Roee

2011-05-05

Quantum metrology uses tools from quantum information science to improve measurement signal-to-noise ratios. The challenge is to increase sensitivity while reducing susceptibility to noise, tasks that are often in conflict. Lock-in measurement is a detection scheme designed to overcome this difficulty by spectrally separating signal from noise. Here we report on the implementation of a quantum analogue to the classical lock-in amplifier. All the lock-in operations--modulation, detection and mixing--are performed through the application of non-commuting quantum operators to the electronic spin state of a single, trapped Sr(+) ion. We significantly increase its sensitivity to external fields while extending phase coherence by three orders of magnitude, to more than one second. Using this technique, we measure frequency shifts with a sensitivity of 0.42 Hz Hz(-1/2) (corresponding to a magnetic field measurement sensitivity of 15 pT Hz(-1/2)), obtaining an uncertainty of less than 10 mHz (350 fT) after 3,720 seconds of averaging. These sensitivities are limited by quantum projection noise and improve on other single-spin probe technologies by two orders of magnitude. Our reported sensitivity is sufficient for the measurement of parity non-conservation, as well as the detection of the magnetic field of a single electronic spin one micrometre from an ion detector with nanometre resolution. As a first application, we perform light shift spectroscopy of a narrow optical quadrupole transition. Finally, we emphasize that the quantum lock-in technique is generic and can potentially enhance the sensitivity of any quantum sensor. ©2011 Macmillan Publishers Limited. All rights reserved

Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

International Nuclear Information System (INIS)

Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu

2006-01-01

A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates (WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed

Single-charge tunneling in ambipolar silicon quantum dots

NARCIS (Netherlands)

Müller, Filipp

2015-01-01

Spin qubits in coupled quantum dots (QDs) are promising for future quantum information processing (QIP). A quantum bit (qubit) is the quantum mechanical analogon of a classical bit. In general, each quantum mechanical two-level system can represent a qubit. For the spin of a single charge carrier

Universal quantum gates for Single Cooper Pair Box based quantum computing

Science.gov (United States)

Echternach, P.; Williams, C. P.; Dultz, S. C.; Braunstein, S.; Dowling, J. P.

2000-01-01

We describe a method for achieving arbitrary 1-qubit gates and controlled-NOT gates within the context of the Single Cooper Pair Box (SCB) approach to quantum computing. Such gates are sufficient to support universal quantum computation.

Spin storage in quantum dot ensembles and single quantum dots

International Nuclear Information System (INIS)

Heiss, Dominik

2009-01-01

This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T 1 =20 ms at B=4 T and T=1 K. A strong magnetic field dependence T 1 ∝B -5 has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T 1 ∝T -1 . The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T 1 h in the microsecond range, therefore, comparable with

Spin storage in quantum dot ensembles and single quantum dots

Energy Technology Data Exchange (ETDEWEB)

Heiss, Dominik

2009-10-15

This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h

Metastable growth of pure wurtzite InGaAs microstructures.

Science.gov (United States)

Ng, Kar Wei; Ko, Wai Son; Lu, Fanglu; Chang-Hasnain, Connie J

2014-08-13

III-V compound semiconductors can exist in two major crystal phases, namely, zincblende (ZB) and wurtzite (WZ). While ZB is thermodynamically favorable in conventional III-V epitaxy, the pure WZ phase can be stable in nanowires with diameters smaller than certain critical values. However, thin nanowires are more vulnerable to surface recombination, and this can ultimately limit their performances as practical devices. In this work, we study a metastable growth mechanism that can yield purely WZ-phased InGaAs microstructures on silicon. InGaAs nucleates as sharp nanoneedles and expand along both axial and radial directions simultaneously in a core-shell fashion. While the base can scale from tens of nanometers to over a micron, the tip can remain sharp over the entire growth. The sharpness maintains a high local surface-to-volume ratio, favoring hexagonal lattice to grow axially. These unique features lead to the formation of microsized pure WZ InGaAs structures on silicon. To verify that the WZ microstructures are truly metastable, we demonstrate, for the first time, the in situ transformation from WZ to the energy-favorable ZB phase inside a transmission electron microscope. This unconventional core-shell growth mechanism can potentially be applied to other III-V materials systems, enabling the effective utilization of the extraordinary properties of the metastable wurtzite crystals.

Semiconductor quantum optics with tailored photonic nanostructures

International Nuclear Information System (INIS)

Laucht, Arne

2011-01-01

This thesis describes detailed investigations of the effects of photonic nanostructures on the light emission properties of self-assembled InGaAs quantum dots. Nanoscale optical cavities and waveguides are employed to enhance the interaction between light and matter, i.e. photons and excitons, up to the point where optical non-linearities appear at the quantum (single photon) level. Such non-linearities are an essential component for the realization of hardware for photon based quantum computing since they can be used for the creation and detection of non-classical states of light and may open the way to new genres of quantum optoelectronic devices such as optical modulators and optical transistors. For single semiconductor quantum dots in photonic crystal nanocavities we investigate the coupling between excitonic transitions and the highly localized mode of the optical cavity. We explore the non-resonant coupling mechanisms which allow excitons to couple to the cavity mode, even when they are not spectrally in resonance. This effect is not observed for atomic cavity quantum electrodynamics experiments and its origin is traced to phonon-assisted scattering for small detunings (ΔE ∝5 meV). For quantum dots in high-Q cavities we observe the coherent coupling between exciton and cavity mode in the strong coupling regime of light-matter interaction, probe the influence of pure dephasing on the coherent interaction at high excitation levels and high lattice temperatures, and examine the coupling of two spatially separated quantum dots via the exchange of real and virtual photons mediated by the cavity mode. Furthermore, we study the spontaneous emission properties of quantum dots in photonic crystal waveguide structures, estimate the fraction of all photons emitted into the propagating waveguide mode, and demonstrate the on-chip generation of single photon emission into the waveguide. The results obtained during the course of this thesis contribute significantly to

Single-Atom Gating of Quantum State Superpositions

Energy Technology Data Exchange (ETDEWEB)

Moon, Christopher

2010-04-28

The ultimate miniaturization of electronic devices will likely require local and coherent control of single electronic wavefunctions. Wavefunctions exist within both physical real space and an abstract state space with a simple geometric interpretation: this state space - or Hilbert space - is spanned by mutually orthogonal state vectors corresponding to the quantized degrees of freedom of the real-space system. Measurement of superpositions is akin to accessing the direction of a vector in Hilbert space, determining an angle of rotation equivalent to quantum phase. Here we show that an individual atom inside a designed quantum corral1 can control this angle, producing arbitrary coherent superpositions of spatial quantum states. Using scanning tunnelling microscopy and nanostructures assembled atom-by-atom we demonstrate how single spins and quantum mirages can be harnessed to image the superposition of two electronic states. We also present a straightforward method to determine the atom path enacting phase rotations between any desired state vectors. A single atom thus becomes a real-space handle for an abstract Hilbert space, providing a simple technique for coherent quantum state manipulation at the spatial limit of condensed matter.

High-Fidelity Single-Shot Toffoli Gate via Quantum Control.

Science.gov (United States)

Zahedinejad, Ehsan; Ghosh, Joydip; Sanders, Barry C

2015-05-22

A single-shot Toffoli, or controlled-controlled-not, gate is desirable for classical and quantum information processing. The Toffoli gate alone is universal for reversible computing and, accompanied by the Hadamard gate, forms a universal gate set for quantum computing. The Toffoli gate is also a key ingredient for (nontopological) quantum error correction. Currently Toffoli gates are achieved by decomposing into sequentially implemented single- and two-qubit gates, which require much longer times and yields lower overall fidelities compared to a single-shot implementation. We develop a quantum-control procedure to construct a single-shot Toffoli gate for three nearest-neighbor-coupled superconducting transmon systems such that the fidelity is 99.9% and is as fast as an entangling two-qubit gate under the same realistic conditions. The gate is achieved by a nongreedy quantum control procedure using our enhanced version of the differential evolution algorithm.

Two-Way Communication with a Single Quantum Particle

Science.gov (United States)

Del Santo, Flavio; Dakić, Borivoje

2018-02-01

In this Letter we show that communication when restricted to a single information carrier (i.e., single particle) and finite speed of propagation is fundamentally limited for classical systems. On the other hand, quantum systems can surpass this limitation. We show that communication bounded to the exchange of a single quantum particle (in superposition of different spatial locations) can result in "two-way signaling," which is impossible in classical physics. We quantify the discrepancy between classical and quantum scenarios by the probability of winning a game played by distant players. We generalize our result to an arbitrary number of parties and we show that the probability of success is asymptotically decreasing to zero as the number of parties grows, for all classical strategies. In contrast, quantum strategy allows players to win the game with certainty.

Evaluation of InGaAS array detector suitability to space environment

Science.gov (United States)

Tauziede, L.; Beulé, K.; Boutillier, M.; Bernard, F.; Reverchon, J.-L.; Buffaz, A.

2017-11-01

InGaAs material has a natural cutoff wavelength of 1.65µm so it is naturally suitable for detection in Short Wavelength InfraRed (SWIR) spectral range. Regarding Earth Observation Spacecraft missions this spectral range can be used for the CO2 concentration measurements in the atmosphere. CNES (French Space agency) is studying a new mission, Microcarb with a spectral band centered on 1.6µm wavelength. InGaAs detector looks attractive for space application because its low dark current allows high temperature operation, reducing by the way the needed instrument resources. The Alcatel Thales III-VLab group has developed InGaAs arrays technology (320x256 & 640x512) that has been studied by CNES, using internal facilities. Performance tests and technological evaluation were performed on a 320x256 pixels array with a pitch of 30µm. The aim of this evaluation was to assess this new technology suitability for space applications. The carried out test plan includes proton radiations with Random Telegraph Signal (RTS) study, operating lifetest and evolution of performances as a function of the operating temperature.

A triple quantum dot in a single-wall carbon nanotube

DEFF Research Database (Denmark)

Grove-Rasmussen, Kasper; Jørgensen, Henrik Ingerslev; Hayashi, T.

2008-01-01

A top-gated single-wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double, and triple quantum dot stability diagrams...

Quantum Logic with Cavity Photons From Single Atoms.

Science.gov (United States)

Holleczek, Annemarie; Barter, Oliver; Rubenok, Allison; Dilley, Jerome; Nisbet-Jones, Peter B R; Langfahl-Klabes, Gunnar; Marshall, Graham D; Sparrow, Chris; O'Brien, Jeremy L; Poulios, Konstantinos; Kuhn, Axel; Matthews, Jonathan C F

2016-07-08

We demonstrate quantum logic using narrow linewidth photons that are produced with an a priori nonprobabilistic scheme from a single ^{87}Rb atom strongly coupled to a high-finesse cavity. We use a controlled-not gate integrated into a photonic chip to entangle these photons, and we observe nonclassical correlations between photon detection events separated by periods exceeding the travel time across the chip by 3 orders of magnitude. This enables quantum technology that will use the properties of both narrow-band single photon sources and integrated quantum photonics.

Operating single quantum emitters with a compact Stirling cryocooler.

Science.gov (United States)

Schlehahn, A; Krüger, L; Gschrey, M; Schulze, J-H; Rodt, S; Strittmatter, A; Heindel, T; Reitzenstein, S

2015-01-01

The development of an easy-to-operate light source emitting single photons has become a major driving force in the emerging field of quantum information technology. Here, we report on the application of a compact and user-friendly Stirling cryocooler in the field of nanophotonics. The Stirling cryocooler is used to operate a single quantum emitter constituted of a semiconductor quantum dot (QD) at a base temperature below 30 K. Proper vibration decoupling of the cryocooler and its surrounding enables free-space micro-photoluminescence spectroscopy to identify and analyze different charge-carrier states within a single quantum dot. As an exemplary application in quantum optics, we perform a Hanbury-Brown and Twiss experiment demonstrating a strong suppression of multi-photon emission events with g((2))(0) Stirling-cooled single quantum emitter under continuous wave excitation. Comparative experiments performed on the same quantum dot in a liquid helium (LHe)-flow cryostat show almost identical values of g((2))(0) for both configurations at a given temperature. The results of this proof of principle experiment demonstrate that low-vibration Stirling cryocoolers that have so far been considered exotic to the field of nanophotonics are an attractive alternative to expensive closed-cycle cryostats or LHe-flow cryostats, which could pave the way for the development of high-quality table-top non-classical light sources.

Operating single quantum emitters with a compact Stirling cryocooler

Energy Technology Data Exchange (ETDEWEB)

Schlehahn, A.; Krüger, L.; Gschrey, M.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T., E-mail: tobias.heindel@tu-berlin.de; Reitzenstein, S. [Institute of Solid State Physics, Technische Universität Berlin, 10623 Berlin (Germany)

2015-01-15

The development of an easy-to-operate light source emitting single photons has become a major driving force in the emerging field of quantum information technology. Here, we report on the application of a compact and user-friendly Stirling cryocooler in the field of nanophotonics. The Stirling cryocooler is used to operate a single quantum emitter constituted of a semiconductor quantum dot (QD) at a base temperature below 30 K. Proper vibration decoupling of the cryocooler and its surrounding enables free-space micro-photoluminescence spectroscopy to identify and analyze different charge-carrier states within a single quantum dot. As an exemplary application in quantum optics, we perform a Hanbury-Brown and Twiss experiment demonstrating a strong suppression of multi-photon emission events with g{sup (2)}(0) < 0.04 from this Stirling-cooled single quantum emitter under continuous wave excitation. Comparative experiments performed on the same quantum dot in a liquid helium (LHe)-flow cryostat show almost identical values of g{sup (2)}(0) for both configurations at a given temperature. The results of this proof of principle experiment demonstrate that low-vibration Stirling cryocoolers that have so far been considered exotic to the field of nanophotonics are an attractive alternative to expensive closed-cycle cryostats or LHe-flow cryostats, which could pave the way for the development of high-quality table-top non-classical light sources.

On-Chip Single-Plasmon Nanocircuit Driven by a Self-Assembled Quantum Dot.

Science.gov (United States)

Wu, Xiaofei; Jiang, Ping; Razinskas, Gary; Huo, Yongheng; Zhang, Hongyi; Kamp, Martin; Rastelli, Armando; Schmidt, Oliver G; Hecht, Bert; Lindfors, Klas; Lippitz, Markus

2017-07-12

Quantum photonics holds great promise for future technologies such as secure communication, quantum computation, quantum simulation, and quantum metrology. An outstanding challenge for quantum photonics is to develop scalable miniature circuits that integrate single-photon sources, linear optical components, and detectors on a chip. Plasmonic nanocircuits will play essential roles in such developments. However, for quantum plasmonic circuits, integration of stable, bright, and narrow-band single photon sources in the structure has so far not been reported. Here we present a plasmonic nanocircuit driven by a self-assembled GaAs quantum dot. Through a planar dielectric-plasmonic hybrid waveguide, the quantum dot efficiently excites narrow-band single plasmons that are guided in a two-wire transmission line until they are converted into single photons by an optical antenna. Our work demonstrates the feasibility of fully on-chip plasmonic nanocircuits for quantum optical applications.

Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

DEFF Research Database (Denmark)

Steffensen, O. M.; Birkedal, Dan; Hanberg, J.

1995-01-01

The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0...

Deterministic and Storable Single-Photon Source Based on a Quantum Memory

International Nuclear Information System (INIS)

Chen Shuai; Chen, Y.-A.; Strassel, Thorsten; Zhao Bo; Yuan Zhensheng; Pan Jianwei; Schmiedmayer, Joerg

2006-01-01

A single-photon source is realized with a cold atomic ensemble ( 87 Rb atoms). A single excitation, written in an atomic quantum memory by Raman scattering of a laser pulse, is retrieved deterministically as a single photon at a predetermined time. It is shown that the production rate of single photons can be enhanced considerably by a feedback circuit while the single-photon quality is conserved. Such a single-photon source is well suited for future large-scale realization of quantum communication and linear optical quantum computation

Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon.

Science.gov (United States)

Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J

2013-04-19

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

Linear optical quantum computing in a single spatial mode.

Science.gov (United States)

Humphreys, Peter C; Metcalf, Benjamin J; Spring, Justin B; Moore, Merritt; Jin, Xian-Min; Barbieri, Marco; Kolthammer, W Steven; Walmsley, Ian A

2013-10-11

We present a scheme for linear optical quantum computing using time-bin-encoded qubits in a single spatial mode. We show methods for single-qubit operations and heralded controlled-phase (cphase) gates, providing a sufficient set of operations for universal quantum computing with the Knill-Laflamme-Milburn [Nature (London) 409, 46 (2001)] scheme. Our protocol is suited to currently available photonic devices and ideally allows arbitrary numbers of qubits to be encoded in the same spatial mode, demonstrating the potential for time-frequency modes to dramatically increase the quantum information capacity of fixed spatial resources. As a test of our scheme, we demonstrate the first entirely single spatial mode implementation of a two-qubit quantum gate and show its operation with an average fidelity of 0.84±0.07.

Quantum Privacy Amplification for a Sequence of Single Qubits

International Nuclear Information System (INIS)

Deng Fuguo; Long Guilu

2006-01-01

We present a scheme for quantum privacy amplification (QPA) for a sequence of single qubits. The QPA procedure uses a unitary operation with two controlled-not gates and a Hadamard gate. Every two qubits are performed with the unitary gate operation, and a measurement is made on one photon and the other one is retained. The retained qubit carries the state information of the discarded one. In this way, the information leakage is reduced. The procedure can be performed repeatedly so that the information leakage is reduced to any arbitrarily low level. With this QPA scheme, the quantum secure direct communication with single qubits can be implemented with arbitrarily high security. We also exploit this scheme to do privacy amplification on the single qubits in quantum information sharing for long-distance communication with quantum repeaters.

Single-photon three-qubit quantum logic using spatial light modulators.

Science.gov (United States)

Kagalwala, Kumel H; Di Giuseppe, Giovanni; Abouraddy, Ayman F; Saleh, Bahaa E A

2017-09-29

The information-carrying capacity of a single photon can be vastly expanded by exploiting its multiple degrees of freedom: spatial, temporal, and polarization. Although multiple qubits can be encoded per photon, to date only two-qubit single-photon quantum operations have been realized. Here, we report an experimental demonstration of three-qubit single-photon, linear, deterministic quantum gates that exploit photon polarization and the two-dimensional spatial-parity-symmetry of the transverse single-photon field. These gates are implemented using a polarization-sensitive spatial light modulator that provides a robust, non-interferometric, versatile platform for implementing controlled unitary gates. Polarization here represents the control qubit for either separable or entangling unitary operations on the two spatial-parity target qubits. Such gates help generate maximally entangled three-qubit Greenberger-Horne-Zeilinger and W states, which is confirmed by tomographical reconstruction of single-photon density matrices. This strategy provides access to a wide range of three-qubit states and operations for use in few-qubit quantum information processing protocols.Photons are essential for quantum information processing, but to date only two-qubit single-photon operations have been realized. Here the authors demonstrate experimentally a three-qubit single-photon linear deterministic quantum gate by exploiting polarization along with spatial-parity symmetry.

Semiconductor quantum optics with tailored photonic nanostructures

Energy Technology Data Exchange (ETDEWEB)

Laucht, Arne

2011-06-15

This thesis describes detailed investigations of the effects of photonic nanostructures on the light emission properties of self-assembled InGaAs quantum dots. Nanoscale optical cavities and waveguides are employed to enhance the interaction between light and matter, i.e. photons and excitons, up to the point where optical non-linearities appear at the quantum (single photon) level. Such non-linearities are an essential component for the realization of hardware for photon based quantum computing since they can be used for the creation and detection of non-classical states of light and may open the way to new genres of quantum optoelectronic devices such as optical modulators and optical transistors. For single semiconductor quantum dots in photonic crystal nanocavities we investigate the coupling between excitonic transitions and the highly localized mode of the optical cavity. We explore the non-resonant coupling mechanisms which allow excitons to couple to the cavity mode, even when they are not spectrally in resonance. This effect is not observed for atomic cavity quantum electrodynamics experiments and its origin is traced to phonon-assisted scattering for small detunings ({delta}E<{proportional_to}5 meV) and a multi-exciton-based, Auger-like process for larger detunings ({delta}E >{proportional_to}5 meV). For quantum dots in high-Q cavities we observe the coherent coupling between exciton and cavity mode in the strong coupling regime of light-matter interaction, probe the influence of pure dephasing on the coherent interaction at high excitation levels and high lattice temperatures, and examine the coupling of two spatially separated quantum dots via the exchange of real and virtual photons mediated by the cavity mode. Furthermore, we study the spontaneous emission properties of quantum dots in photonic crystal waveguide structures, estimate the fraction of all photons emitted into the propagating waveguide mode, and demonstrate the on-chip generation of

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

Science.gov (United States)

Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

2017-07-24

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

Room temperature excitation spectroscopy of single quantum dots

Directory of Open Access Journals (Sweden)

Christian Blum

2011-08-01

Full Text Available We report a single molecule detection scheme to investigate excitation spectra of single emitters at room temperature. We demonstrate the potential of single emitter photoluminescence excitation spectroscopy by recording excitation spectra of single CdSe nanocrystals over a wide spectral range of 100 nm. The spectra exhibit emission intermittency, characteristic of single emitters. We observe large variations in the spectra close to the band edge, which represent the individual heterogeneity of the observed quantum dots. We also find specific excitation wavelengths for which the single quantum dots analyzed show an increased propensity for a transition to a long-lived dark state. We expect that the additional capability of recording excitation spectra at room temperature from single emitters will enable insights into the photophysics of emitters that so far have remained inaccessible.

InGaAs Quantum Dots on Cross-Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium

Directory of Open Access Journals (Sweden)

Teeravat Limwongse

2013-01-01

Full Text Available Storage density on magnetic medium is increasing at an exponential rate. The magnetic region that stores one bit of information is correspondingly decreasing in size and will ultimately reach quantum dimensions. Magnetic quantum dots (QDs can be grown using semiconductor as a host and magnetic constituents added to give them magnetic properties. Our results show how molecular beam epitaxy and, particularly, lattice-mismatched heteroepitaxy can be used to form laterally aligned, high-density semiconducting host in a single growth run without any use of lithography or etching. Representative results of how semiconductor QD hosts arrange themselves on various stripes and cross-hatch patterns are reported.

InGaAs/GaAs (110) quantum dot formation via step meandering

Energy Technology Data Exchange (ETDEWEB)

Diez-Merino, Laura; Tejedor, Paloma [Department of Nanostructures and Surfaces, Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049-Madrid (Spain)

2011-07-01

InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

InGaAs/GaAs (110) quantum dot formation via step meandering

International Nuclear Information System (INIS)

Diez-Merino, Laura; Tejedor, Paloma

2011-01-01

InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

High-speed single-photon signaling for daytime QKD

Science.gov (United States)

Bienfang, Joshua; Restelli, Alessandro; Clark, Charles

2011-03-01

The distribution of quantum-generated cryptographic key at high throughputs can be critically limited by the performance of the systems' single-photon detectors. While noise and afterpulsing are considerations for all single-photon QKD systems, high-transmission rate systems also have critical detector timing-resolution and recovery time requirements. We present experimental results exploiting the high timing resolution and count-rate stability of modified single-photon avalanche diodes (SPADs) in our GHz QKD system operating over a 1.5 km free-space link that demonstrate the ability to apply extremely short temporal gates, enabling daytime free-space QKD with a 4% QBER. We also discuss recent advances in gating techniques for InGaAs SPADs that are suitable for high-speed fiber-based QKD. We present afterpulse-probability measurements that demonstrate the ability to support single-photon count rates above 100 MHz with low afterpulse probability. These results will benefit the design and characterization of free-space and fiber QKD systems. A. Restelli, J.C. Bienfang A. Mink, and C.W. Clark, IEEE J. Sel. Topics in Quant. Electron 16, 1084 (2010).

A fast and versatile quantum key distribution system with hardware key distillation and wavelength multiplexing

International Nuclear Information System (INIS)

Walenta, N; Gisin, N; Guinnard, O; Houlmann, R; Korzh, B; Lim, C W; Lunghi, T; Portmann, C; Thew, R T; Burg, A; Constantin, J; Caselunghe, D; Kulesza, N; Legré, M; Monat, L; Soucarros, M; Trinkler, P; Junod, P; Trolliet, G; Vannel, F

2014-01-01

We present a compactly integrated, 625 MHz clocked coherent one-way quantum key distribution system which continuously distributes secret keys over an optical fibre link. To support high secret key rates, we implemented a fast hardware key distillation engine which allows for key distillation rates up to 4 Mbps in real time. The system employs wavelength multiplexing in order to run over only a single optical fibre. Using fast gated InGaAs single photon detectors, we reliably distribute secret keys with a rate above 21 kbps over 25 km of optical fibre. We optimized the system considering a security analysis that respects finite-key-size effects, authentication costs and system errors for a security parameter of ε QKD  = 4 × 10 −9 . (paper)

Deterministic and robust generation of single photons from a single quantum dot with 99.5% indistinguishability using adiabatic rapid passage.

Science.gov (United States)

Wei, Yu-Jia; He, Yu-Ming; Chen, Ming-Cheng; Hu, Yi-Nan; He, Yu; Wu, Dian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Lu, Chao-Yang; Pan, Jian-Wei

2014-11-12

Single photons are attractive candidates of quantum bits (qubits) for quantum computation and are the best messengers in quantum networks. Future scalable, fault-tolerant photonic quantum technologies demand both stringently high levels of photon indistinguishability and generation efficiency. Here, we demonstrate deterministic and robust generation of pulsed resonance fluorescence single photons from a single semiconductor quantum dot using adiabatic rapid passage, a method robust against fluctuation of driving pulse area and dipole moments of solid-state emitters. The emitted photons are background-free, have a vanishing two-photon emission probability of 0.3% and a raw (corrected) two-photon Hong-Ou-Mandel interference visibility of 97.9% (99.5%), reaching a precision that places single photons at the threshold for fault-tolerant surface-code quantum computing. This single-photon source can be readily scaled up to multiphoton entanglement and used for quantum metrology, boson sampling, and linear optical quantum computing.

Electrical control of single hole spins in nanowire quantum dots

NARCIS (Netherlands)

Pribiag, V.S.; Nadj-Perge, S.; Frolov, S.M.; Berg, J.W.G.; Weperen, van I.; Plissard, S.R.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.

2013-01-01

The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits)1. Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable

Quantum Sensing of Mechanical Motion with a Single InAs Quantum Dot

Science.gov (United States)

2017-03-01

Wenner, J. M. Martinis, and A. N. Cleland, “ Quantum ground state and single- phonon control of a mechanical resonator.,” Nature, vol. 464, no...G. Nogues, S. Seidelin, J. Poizat, O. Arcizet, and M. Richard, “Strain-mediated coupling in a quantum dot- mechanical oscillator hybrid system...Pos 4 Dep 5 School of N upling quantu ctive for funda dded a semico nical resonat vances in thi es large ch ell as the spin for quantum s antum Dots

Quantum discord dynamics of two qubits in single-mode cavities

International Nuclear Information System (INIS)

Wang Chen; Chen Qing-Hu

2013-01-01

The dynamics of quantum discord for two identical qubits in two independent single-mode cavities and a common single-mode cavity are discussed. For the initial Bell state with correlated spins, while the entanglement sudden death can occur, the quantum discord vanishes only at discrete moments in the independent cavities and never vanishes in the common cavity. Interestingly, quantum discord and entanglement show opposite behavior in the common cavity, unlike in the independent cavities. For the initial Bell state with anti-correlated spins, quantum discord and entanglement behave in the same way for both independent cavities and a common cavity. It is found that the detunings always stabilize the quantum discord. (general)

Sub-Poissonian statistics of quantum jumps in single molecule or atomic ion

International Nuclear Information System (INIS)

Osad'ko, I.S.; Gus'kov, D.N.

2007-01-01

A theory for statistics of quantum jumps in single molecule or ion driven by continues wave laser field is developed. These quantum jumps can relate to nonradiative singlet-triplet transitions in a molecule or to on → off jumps in a single ion with shelving processes. Distribution function w N (T) of quantum jumps in time interval T is found. Computer simulation of quantum jumps is realized. Statistical treatment of simulated jumps reveals sub-Poissonian statistics of quantum jumps. The theoretical distribution function w N (T) fits well the distribution of jumps found from simulated data. Experimental data on quantum jumps found in experiments with single Hg + ion are described by the function w N (T) well

High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

Science.gov (United States)

Welser, Roger E. (Inventor); Sood, Ashok K. (Inventor)

2014-01-01

Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path length of incident light passing vertically through the device. Optical scattering into lateral waveguide structures provides a physical mechanism to increase photocurrent generation through in-plane light trapping. However, the insertion of wells of high refractive index material with lower energy gap into the device structure often results in lower voltage operation, and hence lower photovoltaic power conversion efficiency. The voltage output of an InGaAs quantum well waveguide photovoltaic device can be increased by employing a III-V material structure with an extended wide band gap emitter heterojunction. Analysis of the light IV characteristics reveals that non-radiative recombination components of the underlying dark diode current have been reduced, exposing the limiting radiative recombination component and providing a pathway for realizing solar-electric conversion efficiency of 30% or more in single junction cells.

Single-temperature quantum engine without feedback control.

Science.gov (United States)

Yi, Juyeon; Talkner, Peter; Kim, Yong Woon

2017-08-01

A cyclically working quantum-mechanical engine that operates at a single temperature is proposed. Its energy input is delivered by a quantum measurement. The functioning of the engine does not require any feedback control. We analyze work, heat, and the efficiency of the engine for the case of a working substance that is governed by the laws of quantum mechanics and that can be adiabatically compressed and expanded. The obtained general expressions are exemplified for a spin in an adiabatically changing magnetic field and a particle moving in a potential with slowly changing shape.

A new approach of quantum mechanics for neutron single-slit diffraction

International Nuclear Information System (INIS)

Wu Xiangyao; Yang Jinghai; Liu Xiaojing; Wang Li; Liu Bing; Fan Xihui; Guo Yiqing

2007-01-01

Phenomena of electron, neutron, atomic and molecular diffraction have been studied in many experiments, and these experiments are explained by many theoretical works. We study neutron single-slit diffraction with a quantum mechanical approach. It is found that the obvious diffraction patterns can be obtained when the single slit width a is in the range of 3λ-60λ. We also find a new quantum effect of the thickness of single-slit which can make a large impact on the diffraction pattern. The new quantum effect predicted in our work can be tested by the neutron single-slit diffraction experiment. (authors)

Quadra-quantum Dots and Related Patterns of Quantum Dot Molecules:

Directory of Open Access Journals (Sweden)

Somsak Panyakeow

2010-10-01

Full Text Available Abstract Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called ‘‘Droplet Epitaxy” has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390°C with a droplet growth rate of 1ML/s. Arsenic flux (7–8×10-6Torr is then exposed for InGaAs crystallization at 200°C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or , which are preferable crystallographic directions of quantum dot alignment in general.

Coupling of single quantum dots to a photonic crystal waveguide

DEFF Research Database (Denmark)

Lund-Hansen, Toke; Stobbe, Søren; Julsgaard, Brian

Efficient and high quality single-photon sources is a key element in quantum information processing using photons. As a consequence, much current research is focused on realizing all-solid-state nanophotonic single-photon sources. Single photons can be harvested with high efficiency if the emitter...... is coupled efficiently to a single enhanced mode. One popular approach has been to couple single quantum dots to a nanocavity but a limiting factor in this configuration is that in order to apply the photon it should subsequently be coupled out of the cavity, reducing the overall efficiency significantly...

Quantum-field theories as representations of a single $^\\ast$-algebra

OpenAIRE

Raab, Andreas

2013-01-01

We show that many well-known quantum field theories emerge as representations of a single $^\\ast$-algebra. These include free quantum field theories in flat and curved space-times, lattice quantum field theories, Wightman quantum field theories, and string theories. We prove that such theories can be approximated on lattices, and we give a rigorous definition of the continuum limit of lattice quantum field theories.

Non-Markovian spontaneous emission from a single quantum dot

DEFF Research Database (Denmark)

Madsen, Kristian Høeg; Ates, Serkan; Lund-Hansen, Toke

2011-01-01

We observe non-Markovian dynamics of a single quantum dot when tuned into resonance with a cavity mode. Excellent agreement between experiment and theory is observed providing the first quantitative description of such a system.......We observe non-Markovian dynamics of a single quantum dot when tuned into resonance with a cavity mode. Excellent agreement between experiment and theory is observed providing the first quantitative description of such a system....

Evidence for possible quantum dot interdiffusion induced by cap layer growth

International Nuclear Information System (INIS)

Jasinski, J.; Czeczott, M.; Gladysz, A.; Babinski, A.; Kozubowski, J.

1999-01-01

Self-organised InGaAs quantum dots were grown on (001) GaAs substrates and covered with two different types of cap layers grown at significantly different temperatures. In order to determine quantum dot emission energy and dot size distribution, photoluminescence and transmission electron microscopy studies were carried out on such samples. Simple theoretical model neglecting effect of interdiffusion allowed for correlation between quantum dot size and photoluminescence emission energy only in the case of dots covered by cap layers grown at the lower temperature. For dots covered by layers grown at the higher temperature such correlation was possible only when strong interdiffusion was assumed. (author)

Thermal activation of carriers from semiconductor quantum wells

International Nuclear Information System (INIS)

Johnston, M.B.; Herz, L.M.; Dao, L.V.; Gal, M.; Tan, H.H.; Jagadish, C.

1999-01-01

Full text: We have conducted a systematic investigation of the thermal excitation of carriers in confined states of quantum wells. Carriers may be injected into a sample containing a quantum well electrically or optically, once there they rapidly thermalise and are captured by the confined state of the quantum well. Typically electrons and holes recombine radiatively from their respective quantum well states. As a quantum well sample is heated from low temperatures (∼10K), phonon interactions increase which leads to carriers being excited from the well region into the higher energy, barrier region of the sample. Since carrier recombination from barrier regions is via non-radiative processes, there is strong temperature dependence of photoluminescence from the quantum well region. We measured quantum well photoluminescence as a function of excitation intensity and wavelength over the temperature range from 8K to 300K. In high quality InGaAs quantum wells we found unexpected intensity dependence of the spectrally integrated temperature dependent photoluminescence. We believe that this is evidence for by the existence of saturable states at the interfaces of the quantum wells

Quadra-Quantum Dots and Related Patterns of Quantum Dot Molecules: Basic Nanostructures for Quantum Dot Cellular Automata Application

Directory of Open Access Journals (Sweden)

Somsak Panyakeow

2010-10-01

Full Text Available Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called 'Droplet Epitaxy' has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390'C with a droplet growth rate of 1ML/s. Arsenic flux (7'8'10-6Torr is then exposed for InGaAs crystallization at 200'C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or, which are preferable crystallographic directions of quantum dot alignment in general.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons

Science.gov (United States)

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J.; Treutlein, Philipp

2017-08-01

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δ f =0.66 GHz , the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure ηe2 e 50 ns=3.4 (3 )% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency ηint=17 (3 )%. Straightforward technological improvements can boost the end-to-end-efficiency to ηe 2 e≈35 %; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9 ×10-3 photons is dominated by atomic fluorescence, and for input pulses containing on average μ1=0.27 (4 ) photons, the signal to noise level would be unity.

Electrical control of single hole spins in nanowire quantum dots.

Science.gov (United States)

Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

2013-03-01

The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

Deterministic Single-Photon Source for Distributed Quantum Networking

International Nuclear Information System (INIS)

Kuhn, Axel; Hennrich, Markus; Rempe, Gerhard

2002-01-01

A sequence of single photons is emitted on demand from a single three-level atom strongly coupled to a high-finesse optical cavity. The photons are generated by an adiabatically driven stimulated Raman transition between two atomic ground states, with the vacuum field of the cavity stimulating one branch of the transition, and laser pulses deterministically driving the other branch. This process is unitary and therefore intrinsically reversible, which is essential for quantum communication and networking, and the photons should be appropriate for all-optical quantum information processing

Optical reading of field-effect transistors by phase-space absorption quenching in a single InGaAs quantum well conducting channel

Science.gov (United States)

Chemla, D. S.; Bar-Joseph, I.; Klingshirn, C.; Miller, D. A. B.; Kuo, J. M.

1987-03-01

Absorption switching in a semiconductor quantum well by electrically varying the charge density in the quantum well conducting channel of a selectively doped heterostructure transistor is reported for the first time. The phase-space absorption quenching (PAQ) is observed at room temperature in an InGaAs/InAlAs grown on InP FET, and it shows large absorption coefficient changes with relatively broad spectral bandwidth. This PAQ is large enough to be used for direct optical determination of the logic state of the FET.

Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

Science.gov (United States)

Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

2018-06-01

InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

Quantum-classical interface based on single flux quantum digital logic

Science.gov (United States)

McDermott, R.; Vavilov, M. G.; Plourde, B. L. T.; Wilhelm, F. K.; Liebermann, P. J.; Mukhanov, O. A.; Ohki, T. A.

2018-04-01

We describe an approach to the integrated control and measurement of a large-scale superconducting multiqubit array comprising up to 108 physical qubits using a proximal coprocessor based on the Single Flux Quantum (SFQ) digital logic family. Coherent control is realized by irradiating the qubits directly with classical bitstreams derived from optimal control theory. Qubit measurement is performed by a Josephson photon counter, which provides access to the classical result of projective quantum measurement at the millikelvin stage. We analyze the power budget and physical footprint of the SFQ coprocessor and discuss challenges and opportunities associated with this approach.

Quantum routing of single optical photons with a superconducting flux qubit

Science.gov (United States)

Xia, Keyu; Jelezko, Fedor; Twamley, Jason

2018-05-01

Interconnecting optical photons with superconducting circuits is a challenging problem but essential for building long-range superconducting quantum networks. We propose a hybrid quantum interface between the microwave and optical domains where the propagation of a single-photon pulse along a nanowaveguide is controlled in a coherent way by tuning the electromagnetically induced transparency window with the quantum state of a flux qubit mediated by the spin in a nanodiamond. The qubit can route a single-photon pulse using the nanodiamond into a quantum superposition of paths without the aid of an optical cavity—simplifying the setup. By preparing the flux qubit in a superposition state our cavityless scheme creates a hybrid state-path entanglement between a flying single optical photon and a static superconducting qubit.

Single photon emission and quantum ring-cavity coupling in InAs/GaAs quantum rings

International Nuclear Information System (INIS)

Gallardo, E; Nowak, A K; Sanvitto, D; Meulen, H P van der; Calleja, J M; MartInez, L J; Prieto, I; Alija, A R; Granados, D; Taboada, A G; GarcIa, J M; Postigo, P A; Sarkar, D

2010-01-01

Different InAs/GaAs quantum rings embedded in a photonic crystal microcavity are studied by quantum correlation measurements. Single photon emission, with g (2) (0) values around 0.3, is demonstrated for a quantum ring not coupled to the microcavity. Characteristic rise-times are found to be longer for excitons than for biexcitons, resulting in the time asymmetry of the exciton-biexciton cross-correlation. No antibunching is observed in another quantum ring weakly coupled to the microcavity.

A quantum optical transistor with a single quantum dot in a photonic crystal nanocavity

International Nuclear Information System (INIS)

Li Jinjin; Zhu Kadi

2011-01-01

Laser and strong coupling can coexist in a single quantum dot (QD) coupled to a photonic crystal nanocavity. This provides an important clue towards the realization of a quantum optical transistor. Using experimentally realistic parameters, in this work, theoretical analysis shows that such a quantum optical transistor can be switched on or off by turning on or off the pump laser, which corresponds to attenuation or amplification of the probe laser, respectively. Furthermore, based on this quantum optical transistor, an all-optical measurement of the vacuum Rabi splitting is also presented. The idea of associating a quantum optical transistor with this coupled QD-nanocavity system may achieve images of light controlling light in all-optical logic circuits and quantum computers.

A quantum optical transistor with a single quantum dot in a photonic crystal nanocavity.

Science.gov (United States)

Li, Jin-Jin; Zhu, Ka-Di

2011-02-04

Laser and strong coupling can coexist in a single quantum dot (QD) coupled to a photonic crystal nanocavity. This provides an important clue towards the realization of a quantum optical transistor. Using experimentally realistic parameters, in this work, theoretical analysis shows that such a quantum optical transistor can be switched on or off by turning on or off the pump laser, which corresponds to attenuation or amplification of the probe laser, respectively. Furthermore, based on this quantum optical transistor, an all-optical measurement of the vacuum Rabi splitting is also presented. The idea of associating a quantum optical transistor with this coupled QD-nanocavity system may achieve images of light controlling light in all-optical logic circuits and quantum computers.

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

Science.gov (United States)

Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

2005-01-01

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

External quantum efficiency enhancement by photon recycling with backscatter evasion.

Science.gov (United States)

Nagano, Koji; Perreca, Antonio; Arai, Koji; Adhikari, Rana X

2018-05-01

The nonunity quantum efficiency (QE) in photodiodes (PD) causes deterioration of signal quality in quantum optical experiments due to photocurrent loss as well as the introduction of vacuum fluctuations into the measurement. In this paper, we report that the external QE enhancement of a PD was demonstrated by recycling the reflected photons. The external QE for an InGaAs PD was increased by 0.01-0.06 from 0.86-0.92 over a wide range of incident angles. Moreover, we confirmed that this technique does not increase backscattered light when the recycled beam is properly misaligned.

Generating single-photon catalyzed coherent states with quantum-optical catalysis

Energy Technology Data Exchange (ETDEWEB)

Xu, Xue-xiang, E-mail: xuxuexiang@jxnu.edu.cn [Center for Quantum Science and Technology, Jiangxi Normal University, Nanchang 330022 (China); Yuan, Hong-chun [College of Electrical and Optoelectronic Engineering, Changzhou Institute of Technology, Changzhou 213002 (China)

2016-07-15

We theoretically generate single-photon catalyzed coherent states (SPCCSs) by means of quantum-optical catalysis based on the beam splitter (BS) or the parametric amplifier (PA). These states are obtained in one of the BS (or PA) output channels if a coherent state and a single-photon Fock state are present in two input ports and a single photon is registered in the other output port. The success probabilities of the detection (also the normalization factors) are discussed, which is different for BS and PA catalysis. In addition, we prove that the generated states catalyzed by BS and PA devices are actually the same quantum states after analyzing photon number distribution of the SPCCSs. The quantum properties of the SPCCSs, such as sub-Poissonian distribution, anti-bunching effect, quadrature squeezing effect, and the negativity of the Wigner function are investigated in detail. The results show that the SPCCSs are non-Gaussian states with an abundance of nonclassicality. - Highlights: • We generate single-photon catalyzed coherent states with quantum-optical catalysis. • We prove the equivalent effects of the lossless beam splitter and the non-degenerate parametric amplifier. • Some nonclassical properties of the generated states are investigated in detail.

Single-Photon Source for Quantum Information Based on Single Dye Molecule Fluorescence in Liquid Crystal Host

International Nuclear Information System (INIS)

Lukishova, S.G.; Knox, R.P.; Freivald, P.; McNamara, A.; Boyd, R.W.; Stroud, Jr. C.R.; Schmid, A.W.; Marshall, K.L.

2006-01-01

This paper describes a new application for liquid crystals: quantum information technology. A deterministically polarized single-photon source that efficiently produces photons exhibiting antibunching is a pivotal hardware element in absolutely secure quantum communication. Planar-aligned nematic liquid crystal hosts deterministically align the single dye molecules which produce deterministically polarized single (antibunched) photons. In addition, 1-D photonic bandgap cholesteric liquid crystals will increase single-photon source efficiency. The experiments and challenges in the observation of deterministically polarized fluorescence from single dye molecules in planar-aligned glassy nematic-liquid-crystal oligomer as well as photon antibunching in glassy cholesteric oligomer are described for the first time

Optical levitation of microdroplet containing a single quantum dot

OpenAIRE

Minowa, Yosuke; Kawai, Ryoichi; Ashida, Masaaki

2014-01-01

We demonstrate the optical levitation or trapping in helium gas of a single quantum dot (QD) within a liquid droplet. Bright single photon emission from the levitated QD in the droplet was observed for more than 200 s. The observed photon count rates are consistent with the value theoretically estimated from the two-photon-action cross section. This paper presents the realization of an optically levitated solid-state quantum emitter. This paper was published in Optics Letters and is made avai...

Measurement of quantum noise in a single-electron transistor near the quantum limit

Science.gov (United States)

Xue, W. W.; Ji, Z.; Pan, Feng; Stettenheim, Joel; Blencowe, M. P.; Rimberg, A. J.

2009-09-01

Quantum measurement has challenged physicists for almost a century. Classically, there is no lower bound on the noise a measurement may add. Quantum mechanically, however, measuring a system necessarily perturbs it. When applied to electrical amplifiers, this means that improved sensitivity requires increased backaction that itself contributes noise. The result is a strict quantum limit on added amplifier noise. To approach this limit, a quantum-limited amplifier must possess an ideal balance between sensitivity and backaction; furthermore, its noise must dominate that of subsequent classical amplifiers. Here, we report the first complete and quantitative measurement of the quantum noise of a superconducting single-electron transistor (S-SET) near a double Cooper-pair resonance predicted to have the right combination of sensitivity and backaction. A simultaneous measurement of our S-SET's charge sensitivity indicates that it operates within a factor of 3.6 of the quantum limit, a fourfold improvement over the nearest comparable results.

Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

International Nuclear Information System (INIS)

Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

2010-01-01

Molecular-Beam Epitaxy growth of multiple In 0.4 Ga 0.6 As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4 Ga 0.6 As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4 Ga 0.6 As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

Science.gov (United States)

Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

2015-01-01

Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan–Lukin–Cirac–Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices. PMID:26468996

Quantum design rules for single molecule logic gates.

Science.gov (United States)

Renaud, N; Hliwa, M; Joachim, C

2011-08-28

Recent publications have demonstrated how to implement a NOR logic gate with a single molecule using its interaction with two surface atoms as logical inputs [W. Soe et al., ACS Nano, 2011, 5, 1436]. We demonstrate here how this NOR logic gate belongs to the general family of quantum logic gates where the Boolean truth table results from a full control of the quantum trajectory of the electron transfer process through the molecule by very local and classical inputs practiced on the molecule. A new molecule OR gate is proposed for the logical inputs to be also single metal atoms, one per logical input.

A novel high-efficiency single-mode quantum dot single photon source

DEFF Research Database (Denmark)

Gerard, J.M.; Gregersen, Niels; Nielsen, Torben Roland

2008-01-01

We present a novel single-mode single photon source exploiting the emission of a semiconductor quantum dot (QD) located inside a photonic wire. Besides an excellent coupling (>95%) of QD spontaneous emission to the fundamental guided mode [1], we show that a single photon collection efficiency...... above 80% within a 0.5 numerical aperture can be achieved using a bottom Bragg mirror and a tapering of the nanowire tip. Because this photon collection strategy does not exploit the Purcell effect, it could also be efficiently applied to broadband single photon emitters such as F-centers in diamond....

Efficient fiber-coupled single-photon sources based on quantum dots

DEFF Research Database (Denmark)

Daveau, Raphaël Sura

refrigeration with coupled quantum wells. Many photonic quantum information processing applications would benet from a highbrightness, ber-coupled source of triggered single photons. This thesis presents a study of such sources based on quantum dots coupled to unidirectional photonic-crystal waveguide devices.......6 %. This latter method opens a promising future for increasing the eciency and reliability of planar chip-based single-photon sources. Refrigeration of a solid-state system with light has potential applications for cooling small-scale electronic and photonic circuits. We show theoretically that two coupled...... semiconductor quantum wells are ecient cooling media because they support long-lived indirect electron-hole pairs. These pairs can be thermally excited to distinct higher-energy states with faster radiative recombination, thereby creating an ecient escape channel to remove thermal energy from the system. From...

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Directory of Open Access Journals (Sweden)

Jeffrey C. McCallum

2012-01-01

Full Text Available Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single ion implantation and single ion detection for development of electronic devices for quantum computing. The scope of international research into single ion implantation is presented in the context of our own research in the Centre for Quantum Computation and Communication Technology in Australia. Various single ion detection schemes are presented, and limitations on dopant placement accuracy due to ion straggling are discussed together with pathways for scale-up to multiple quantum devices on the one chip. Possible future directions for ion implantation in quantum computing and communications are also discussed.

Quantum teleportation via noisy bipartite and tripartite accelerating quantum states: beyond the single mode approximation

Science.gov (United States)

Zounia, M.; Shamirzaie, M.; Ashouri, A.

2017-09-01

In this paper quantum teleportation of an unknown quantum state via noisy maximally bipartite (Bell) and maximally tripartite (Greenberger-Horne-Zeilinger (GHZ)) entangled states are investigated. We suppose that one of the observers who would receive the sent state accelerates uniformly with respect to the sender. The interactions of the quantum system with its environment during the teleportation process impose noises. These (unital and nonunital) noises are: phase damping, phase flip, amplitude damping and bit flip. In expressing the modes of the Dirac field used as qubits, in the accelerating frame, the so-called single mode approximation is not imposed. We calculate the fidelities of teleportation, and discuss their behaviors using suitable plots. The effects of noise, acceleration and going beyond the single mode approximation are discussed. Although the Bell states bring higher fidelities than GHZ states, the global behaviors of the two quantum systems with respect to some noise types, and therefore their fidelities, are different.

Distributed quantum computing with single photon sources

International Nuclear Information System (INIS)

Beige, A.; Kwek, L.C.

2005-01-01

Full text: Distributed quantum computing requires the ability to perform nonlocal gate operations between the distant nodes (stationary qubits) of a large network. To achieve this, it has been proposed to interconvert stationary qubits with flying qubits. In contrast to this, we show that distributed quantum computing only requires the ability to encode stationary qubits into flying qubits but not the conversion of flying qubits into stationary qubits. We describe a scheme for the realization of an eventually deterministic controlled phase gate by performing measurements on pairs of flying qubits. Our scheme could be implemented with a linear optics quantum computing setup including sources for the generation of single photons on demand, linear optics elements and photon detectors. In the presence of photon loss and finite detector efficiencies, the scheme could be used to build large cluster states for one way quantum computing with a high fidelity. (author)

Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

Energy Technology Data Exchange (ETDEWEB)

Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

2016-05-23

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

Single electron-spin memory with a semiconductor quantum dot

International Nuclear Information System (INIS)

Young, Robert J; Dewhurst, Samuel J; Stevenson, R Mark; Atkinson, Paola; Bennett, Anthony J; Ward, Martin B; Cooper, Ken; Ritchie, David A; Shields, Andrew J

2007-01-01

We show storage of the circular polarization of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently read out through the electronically-triggered emission of a single photon. The emitted photon shares the same polarization as the initial pulse but has a different energy, making the transfer of quantum information between different physical systems possible. With an applied magnetic field of 2 T, spin memory is preserved for at least 1000 times more than the exciton's radiative lifetime

Process tomography via sequential measurements on a single quantum system

CSIR Research Space (South Africa)

Bassa, H

2015-09-01

Full Text Available The authors utilize a discrete (sequential) measurement protocol to investigate quantum process tomography of a single two-level quantum system, with an unknown initial state, undergoing Rabi oscillations. The ignorance of the dynamical parameters...

Single-Shot Quantum Nondemolition Detection of Individual Itinerant Microwave Photons

Science.gov (United States)

Besse, Jean-Claude; Gasparinetti, Simone; Collodo, Michele C.; Walter, Theo; Kurpiers, Philipp; Pechal, Marek; Eichler, Christopher; Wallraff, Andreas

2018-04-01

Single-photon detection is an essential component in many experiments in quantum optics, but it remains challenging in the microwave domain. We realize a quantum nondemolition detector for propagating microwave photons and characterize its performance using a single-photon source. To this aim, we implement a cavity-assisted conditional phase gate between the incoming photon and a superconducting artificial atom. By reading out the state of this atom in a single shot, we reach an external (internal) photon-detection fidelity of 50% (71%), limited by transmission efficiency between the source and the detector (75%) and the coherence properties of the qubit. By characterizing the coherence and average number of photons in the field reflected off the detector, we demonstrate its quantum nondemolition nature. We envisage applications in generating heralded remote entanglement between qubits and for realizing logic gates between propagating microwave photons.

Authenticated multi-user quantum key distribution with single particles

Science.gov (United States)

Lin, Song; Wang, Hui; Guo, Gong-De; Ye, Guo-Hua; Du, Hong-Zhen; Liu, Xiao-Fen

2016-03-01

Quantum key distribution (QKD) has been growing rapidly in recent years and becomes one of the hottest issues in quantum information science. During the implementation of QKD on a network, identity authentication has been one main problem. In this paper, an efficient authenticated multi-user quantum key distribution (MQKD) protocol with single particles is proposed. In this protocol, any two users on a quantum network can perform mutual authentication and share a secure session key with the assistance of a semi-honest center. Meanwhile, the particles, which are used as quantum information carriers, are not required to be stored, therefore the proposed protocol is feasible with current technology. Finally, security analysis shows that this protocol is secure in theory.

Best-Practice Criteria for Practical Security of Self-Differencing Avalanche Photodiode Detectors in Quantum Key Distribution

Science.gov (United States)

Koehler-Sidki, A.; Dynes, J. F.; Lucamarini, M.; Roberts, G. L.; Sharpe, A. W.; Yuan, Z. L.; Shields, A. J.

2018-04-01

Fast-gated avalanche photodiodes (APDs) are the most commonly used single photon detectors for high-bit-rate quantum key distribution (QKD). Their robustness against external attacks is crucial to the overall security of a QKD system, or even an entire QKD network. We investigate the behavior of a gigahertz-gated, self-differencing (In,Ga)As APD under strong illumination, a tactic Eve often uses to bring detectors under her control. Our experiment and modeling reveal that the negative feedback by the photocurrent safeguards the detector from being blinded through reducing its avalanche probability and/or strengthening the capacitive response. Based on this finding, we propose a set of best-practice criteria for designing and operating fast-gated APD detectors to ensure their practical security in QKD.

Zero-phonon-line emission of single molecules for applications in quantum information processing

Science.gov (United States)

Kiraz, Alper; Ehrl, M.; Mustecaplioglu, O. E.; Hellerer, T.; Brauchle, C.; Zumbusch, A.

2005-07-01

A single photon source which generates transform limited single photons is highly desirable for applications in quantum optics. Transform limited emission guarantees the indistinguishability of the emitted single photons. This, in turn brings groundbreaking applications in linear optics quantum information processing within an experimental reach. Recently, self-assembled InAs quantum dots and trapped atoms have successfully been demonstrated as such sources for highly indistinguishable single photons. Here, we demonstrate that nearly transform limited zero-phonon-line (ZPL) emission from single molecules can be obtained by using vibronic excitation. Furthermore we report the results of coincidence detection experiments at the output of a Michelson-type interferometer. These experiments reveal Hong-Ou-Mandel correlations as a proof of the indistinguishability of the single photons emitted consecutively from a single molecule. Therefore, single molecules constitute an attractive alternative to single InAs quantum dots and trapped atoms for applications in linear optics quantum information processing. Experiments were performed with a home-built confocal microscope keeping the sample in a superfluid liquid Helium bath at 1.4K. We investigated terrylenediimide (TDI) molecules highly diluted in hexadecane (Shpol'skii matrix). A continuous wave single mode dye laser was used for excitation of vibronic transitions of individual molecules. From the integral fluorescence, the ZPL of single molecules was selected with a spectrally narrow interference filter. The ZPL emission was then sent to a scanning Fabry-Perot interferometer for linewidth measurements or a Michelson-type interferometer for coincidence detection.

On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits.

Science.gov (United States)

Elshaari, Ali W; Zadeh, Iman Esmaeil; Fognini, Andreas; Reimer, Michael E; Dalacu, Dan; Poole, Philip J; Zwiller, Val; Jöns, Klaus D

2017-08-30

Quantum light plays a pivotal role in modern science and future photonic applications. Since the advent of integrated quantum nanophotonics different material platforms based on III-V nanostructures-, colour centers-, and nonlinear waveguides as on-chip light sources have been investigated. Each platform has unique advantages and limitations; however, all implementations face major challenges with filtering of individual quantum states, scalable integration, deterministic multiplexing of selected quantum emitters, and on-chip excitation suppression. Here we overcome all of these challenges with a hybrid and scalable approach, where single III-V quantum emitters are positioned and deterministically integrated in a complementary metal-oxide-semiconductor-compatible photonic circuit. We demonstrate reconfigurable on-chip single-photon filtering and wavelength division multiplexing with a foot print one million times smaller than similar table-top approaches, while offering excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm. Our work marks an important step to harvest quantum optical technologies' full potential.Combining different integration platforms on the same chip is currently one of the main challenges for quantum technologies. Here, Elshaari et al. show III-V Quantum Dots embedded in nanowires operating in a CMOS compatible circuit, with controlled on-chip filtering and tunable routing.

Statistical Characterization of Dispersed Single-Wall Carbon Nanotube Quantum Dots

International Nuclear Information System (INIS)

Shimizu, M; Moriyama, S; Suzuki, M; Fuse, T; Homma, Y; Ishibashi, K

2006-01-01

Quantum dots have been fabricated in single-wall carbon nanotubes (SWCNTs) simply by depositing metallic contacts on top of them. The fabricated quantum dots show different characteristics from sample to sample, which are even different in samples fabricated in the same chip. In this report, we study the statistical variations of the quantum dots fabricated with our method, and suggest their possible origin

Materials and device characteristics of pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP high electron mobility transistors

International Nuclear Information System (INIS)

Ballingall, J.M.; Ho, P.; Tessmer, G.J.; Martin, P.A.; Yu, T.H.; Choa, P.C.; Smith, P.M.; Duh, K.H.G.

1990-01-01

High electron mobility transistors (HEMTs) with single quantum well active layers composed of pseudomorphic InGaAs grown on GaAs and InP are establishing new standards of performance for microwave and millimeter wave applications. This is due to recent progress in the molecular beam epitaxial growth of strained InGaAs heterostructures coupled with developments in short gate length (sub-0.2 μm) device fabrication technology. This paper reviews this progress and the current state-of-the-art for materials and devices

Electronic properties of excited states in single InAs quantum dots

International Nuclear Information System (INIS)

Warming, Till

2009-01-01

The application of quantum-mechanical effects in semiconductor nanostructures enables the realization of novel opto-electronic devices. Examples are given by single-photon emitters and emitters of entangled photon pairs, both being essential for quantum cryptography, or for qubit systems as needed for quantum computing. InAs/GaAs quantum dots are one of the most promising candidates for such applications. A detailed knowledge of the electronic properties of quantum dots is a prerequisite for this development. The aim of this work is an experimental access to the detailed electronic structure of the excited states in single InAs/GaAs quantum dots including few-particle effects and in particular exchange interaction. The experimental approach is micro photoluminescence excitation spectroscopy (μPLE). One of the main difficulties using μPLE to probe single QDs is the unambiguous assignment of the observed resonances in the spectrum to specific transitions. By comparing micro photoluminescence (μPL) and μPLE spectra, the identification of the main resonances becomes possible. The key is given by the fine structure of the hot trion. Excitation spectroscopy on single charged QDs enables for the first time the complete observation of a non-trivial fine structure of an excitonic complex in a QD, the hot trion. Modelling based on eight-band k.p theory in combination with a configuration interaction scheme is in excellent agreement. Therewith the simulation also enables realistic predictions on the fine structure of the ground-state exciton which is of large importance for single quantum dot devices. Theory concludes from the observed transitions that the structural symmetry of the QDs is broken. Micro photoluminescence excitation spectroscopy combined with resonantly excited micro photoluminescence enables an optical access to the single particle states of the hole without the influence of few-particle coulomb interactions. Based on this knowledge the exciton binding

High-Dimensional Single-Photon Quantum Gates: Concepts and Experiments.

Science.gov (United States)

Babazadeh, Amin; Erhard, Manuel; Wang, Feiran; Malik, Mehul; Nouroozi, Rahman; Krenn, Mario; Zeilinger, Anton

2017-11-03

Transformations on quantum states form a basic building block of every quantum information system. From photonic polarization to two-level atoms, complete sets of quantum gates for a variety of qubit systems are well known. For multilevel quantum systems beyond qubits, the situation is more challenging. The orbital angular momentum modes of photons comprise one such high-dimensional system for which generation and measurement techniques are well studied. However, arbitrary transformations for such quantum states are not known. Here we experimentally demonstrate a four-dimensional generalization of the Pauli X gate and all of its integer powers on single photons carrying orbital angular momentum. Together with the well-known Z gate, this forms the first complete set of high-dimensional quantum gates implemented experimentally. The concept of the X gate is based on independent access to quantum states with different parities and can thus be generalized to other photonic degrees of freedom and potentially also to other quantum systems.

Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

Energy Technology Data Exchange (ETDEWEB)

Deshpande, Saniya; Frost, Thomas; Hazari, Arnab; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109 (United States)

2014-10-06

We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ∼1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200 MHz.

Efficient controlled-phase gate for single-spin qubits in quantum dots

NARCIS (Netherlands)

Meunier, T.; Calado, V.E.; Vandersypen, L.M.K.

2011-01-01

Two-qubit interactions are at the heart of quantum information processing. For single-spin qubits in semiconductor quantum dots, the exchange gate has always been considered the natural two-qubit gate. The recent integration of a magnetic field or g-factor gradients in coupled quantum dot systems

Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

DEFF Research Database (Denmark)

Fiore, A.; Oesterle, U.; Stanley, R.P.

2001-01-01

We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices

Energy Technology Data Exchange (ETDEWEB)

Schwager, Heike

2012-07-04

In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with

Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices

International Nuclear Information System (INIS)

Schwager, Heike

2012-01-01

In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with

A molecular quantum spin network controlled by a single qubit.

Science.gov (United States)

Schlipf, Lukas; Oeckinghaus, Thomas; Xu, Kebiao; Dasari, Durga Bhaktavatsala Rao; Zappe, Andrea; de Oliveira, Felipe Fávaro; Kern, Bastian; Azarkh, Mykhailo; Drescher, Malte; Ternes, Markus; Kern, Klaus; Wrachtrup, Jörg; Finkler, Amit

2017-08-01

Scalable quantum technologies require an unprecedented combination of precision and complexity for designing stable structures of well-controllable quantum systems on the nanoscale. It is a challenging task to find a suitable elementary building block, of which a quantum network can be comprised in a scalable way. We present the working principle of such a basic unit, engineered using molecular chemistry, whose collective control and readout are executed using a nitrogen vacancy (NV) center in diamond. The basic unit we investigate is a synthetic polyproline with electron spins localized on attached molecular side groups separated by a few nanometers. We demonstrate the collective readout and coherent manipulation of very few (≤ 6) of these S = 1/2 electronic spin systems and access their direct dipolar coupling tensor. Our results show that it is feasible to use spin-labeled peptides as a resource for a molecular qubit-based network, while at the same time providing simple optical readout of single quantum states through NV magnetometry. This work lays the foundation for building arbitrary quantum networks using well-established chemistry methods, which has many applications ranging from mapping distances in single molecules to quantum information processing.

Deterministic self-organization: Ordered positioning of InAs quantum dots by self-organized anisotropic strain engineering on patterned GaAs(311)B

International Nuclear Information System (INIS)

Selcuk, E.; Hamhuis, G.J.; Noetzel, R.

2009-01-01

Laterally ordered InGaAs quantum dot (QD) arrays, InAs QD molecules, and single InAs QDs in a spot-like periodic arrangement are created by self-organized anisotropic strain engineering of InGaAs/GaAs superlattice (SL) templates on planar GaAs (311)B substrates in molecular beam epitaxy. On shallow- and deep-patterned substrates the respectively generated steps and facets guide the self-organization process during SL template formation to create more complex ordering such as periodic stripes, depending on pattern design. Here we demonstrate for patterns such as shallow- and deepetched round holes and deep-etched zigzag mesas that the self-organized periodic arrangement of QD molecules and single QDs is spatially locked to the pattern sidewalls and corners. This extends the concept of guided self-organization to deterministic self-organization. Absolute position control of the QDs is achieved without one-to-one pattern definition. This guarantees the excellent arrangement control of the ordered QD molecules and single QDs with strong photoluminescence emission up to room temperature, which is required for future quantum functional devices. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Modeling and optimization of InGaAs infrared photovoltaic detectors

CERN Document Server

Piotrowski, J; Reginski, K

2000-01-01

The performance of In sub x Ga sub 1 sub - sub x As detectors operating in the 2-3.4 mu m spectral range and temperature of 300 K has been analyzed theoretically as a function of wavelength, band gap and doping level with special emphasis on 2-2.5 mu m and 3-3.5 mu m atmospheric window devices. The calculations show that the dominant generation-recombination mechanism in p-type, intrinsic and in a lightly doped n-type InGaAs is the spin split-off band Auger process (AS). Since the AS generation increases with the square of the hole concentration, the minimum thermal generation and the best performance can be obtained using moderately doped n-type material as the absorber region of a photovoltaic device. In principle, the ultimate performance can be achieved in the optimized homojunction devices with relatively thick n-type absorber region forming n-p junction with a thin p-type material. N-type doping of absorber region of InGaAs photodiodes at 300 K changes from 1x10 sup 1 sup 4 to 5.2x10 sup 1 sup 5 cm sup ...

Mixed biexcitons in single quantum wells

DEFF Research Database (Denmark)

Wagner, Hans Peter; Langbein, Wolfgang Werner; Hvam, Jørn Märcher

1999-01-01

Biexcitonic complexes in a ZnSe single quantum well are investigated by spectrally resolved four-wave mixing (FWM). The formation of heavy-heavy-hole XXh and of mixed heavy-light-hole XXm biexcitons showing binding energies of Delta(h) = 4.8 meV and Delta(m)= 2.8 meV is identified by polarization...

Quantum delayed-choice experiment with a single neutral atom.

Science.gov (United States)

Li, Gang; Zhang, Pengfei; Zhang, Tiancai

2017-10-01

We present a proposal to implement a quantum delayed-choice (QDC) experiment with a single neutral atom, such as a rubidium or cesium atom. In our proposal, a Ramsey interferometer is adopted to observe the wave-like or particle-like behaviors of a single atom depending on the existence or absence of the second π/2-rotation. A quantum-controlled π/2-rotation on target atom is realized through a Rydberg-Rydberg interaction by another ancilla atom. It shows that a heavy neutral atom can also have a morphing behavior between the particle and the wave. The realization of the QDC experiment with such heavy neutral atoms not only is significant to understand the Bohr's complementarity principle in matter-wave and matter-particle domains but also has great potential on the quantum information process with neutral atoms.

Quantum optics. All-optical routing of single photons by a one-atom switch controlled by a single photon.

Science.gov (United States)

Shomroni, Itay; Rosenblum, Serge; Lovsky, Yulia; Bechler, Orel; Guendelman, Gabriel; Dayan, Barak

2014-08-22

The prospect of quantum networks, in which quantum information is carried by single photons in photonic circuits, has long been the driving force behind the effort to achieve all-optical routing of single photons. We realized a single-photon-activated switch capable of routing a photon from any of its two inputs to any of its two outputs. Our device is based on a single atom coupled to a fiber-coupled, chip-based microresonator. A single reflected control photon toggles the switch from high reflection (R ~ 65%) to high transmission (T ~ 90%), with an average of ~1.5 control photons per switching event (~3, including linear losses). No additional control fields are required. The control and target photons are both in-fiber and practically identical, making this scheme compatible with scalable architectures for quantum information processing. Copyright © 2014, American Association for the Advancement of Science.

Single Molecule Applications of Quantum Dots

DEFF Research Database (Denmark)

Rasmussen, Thomas Elmelund; Jauffred, Liselotte; Brewer, Jonathan R.

2013-01-01

Fluorescent nanocrystals composed of semiconductor materials were first introduced for biological applications in the late 1990s. The focus of this review is to give a brief survey of biological applications of quantum dots (QDs) at the single QD sensitivity level. These are described as follows: 1......) QD blinking and bleaching statistics, 2) the use of QDs in high speed single particle tracking with a special focus on how to design the biofunctional coatings of QDs which enable specific targeting to single proteins or lipids of interest, 3) a hybrid lipid-DNA analogue binding QDs which allows...... for tracking single lipids in lipid bilayers, 4) two-photon fluorescence correlation spectroscopy of QDs and 5) optical trapping and excitation of single QDs. In all of these applications, the focus is on the single particle sensitivity level of QDs. The high applicability of QDs in live cell imaging...

Quantum dot-micropillars: a bright source of coherent single photons

DEFF Research Database (Denmark)

Unsleber, Sebastian; He, Yu-Ming; Maier, Sebastian

2016-01-01

We present the efficient generation of coherent single photons based on quantum dots in micropillars. We utilize a scalable lithography scheme leading to quantum dot-micropillar devices with 74% extraction efficiency. Via pulsed strict resonant pumping, we show an indistinguishability of consecut...

Resonance fluorescence and quantum jumps in single atoms: Testing the randomness of quantum mechanics

International Nuclear Information System (INIS)

Erber, T.; Hammerling, P.; Hockney, G.; Porrati, M.; Putterman, S.; La Jolla Institute, La Jolla, California 92037; Department of Physics, University of California, Los Angeles, California 90024)

1989-01-01

When a single trapped 198 Hg + ion is illuminated by two lasers, each tuned to an approximate transition, the resulting fluorescence switches on and off in a series of pulses resembling a bistable telegraph. This intermittent fluorescence can also be obtained by optical pumping with a single laser. Quantum jumps between successive atomic levels may be traced directly with multiple-resonance fluorescence. Atomic transition rates and photon antibunching distributions can be inferred from the pulse statistics and compared with quantum theory. Stochastic tests also indicate that the quantum telegraphs are good random number generators. During periods when the fluorescence is switched off, the radiationless atomic currents that generate the telegraph signals can be adjusted by varying the laser illumination: if this coherent evolution of the wave functions is sustained over sufficiently long time intervals, novel interactive precision measurements, near the limits of the time-energy uncertainty relations, are possible. Copyright 1989 Academic Press, Inc

Single Photon Experiments and Quantum Complementarity

Directory of Open Access Journals (Sweden)

Georgiev D. D.

2007-04-01

Full Text Available Single photon experiments have been used as one of the most striking illustrations of the apparently nonclassical nature of the quantum world. In this review we examine the mathematical basis of the principle of complementarity and explain why the Englert-Greenberger duality relation is not violated in the configurations of Unruh and of Afshar.

Demonstrating quantum random with single photons

International Nuclear Information System (INIS)

Bronner, Patrick; Strunz, Andreas; Meyn, Jan-Peter; Silberhorn, Christine

2009-01-01

We present an experiment for education which demonstrates random transmission or reflection of heralded single photons on beam splitters. With our set-up, we can realize different quantum random experiments by appropriate settings of polarization rotators. The concept of entanglement is motivated by correlated randomness. The experiments are suitable for undergraduate education and are available as interactive screen experiments.

Long-Distance Single Photon Transmission from a Trapped Ion via Quantum Frequency Conversion

Science.gov (United States)

Walker, Thomas; Miyanishi, Koichiro; Ikuta, Rikizo; Takahashi, Hiroki; Vartabi Kashanian, Samir; Tsujimoto, Yoshiaki; Hayasaka, Kazuhiro; Yamamoto, Takashi; Imoto, Nobuyuki; Keller, Matthias

2018-05-01

Trapped atomic ions are ideal single photon emitters with long-lived internal states which can be entangled with emitted photons. Coupling the ion to an optical cavity enables the efficient emission of single photons into a single spatial mode and grants control over their temporal shape. These features are key for quantum information processing and quantum communication. However, the photons emitted by these systems are unsuitable for long-distance transmission due to their wavelengths. Here we report the transmission of single photons from a single 40Ca+ ion coupled to an optical cavity over a 10 km optical fiber via frequency conversion from 866 nm to the telecom C band at 1530 nm. We observe nonclassical photon statistics of the direct cavity emission, the converted photons, and the 10 km transmitted photons, as well as the preservation of the photons' temporal shape throughout. This telecommunication-ready system can be a key component for long-distance quantum communication as well as future cloud quantum computation.

Single-hidden-layer feed-forward quantum neural network based on Grover learning.

Science.gov (United States)

Liu, Cheng-Yi; Chen, Chein; Chang, Ching-Ter; Shih, Lun-Min

2013-09-01

In this paper, a novel single-hidden-layer feed-forward quantum neural network model is proposed based on some concepts and principles in the quantum theory. By combining the quantum mechanism with the feed-forward neural network, we defined quantum hidden neurons and connected quantum weights, and used them as the fundamental information processing unit in a single-hidden-layer feed-forward neural network. The quantum neurons make a wide range of nonlinear functions serve as the activation functions in the hidden layer of the network, and the Grover searching algorithm outstands the optimal parameter setting iteratively and thus makes very efficient neural network learning possible. The quantum neuron and weights, along with a Grover searching algorithm based learning, result in a novel and efficient neural network characteristic of reduced network, high efficient training and prospect application in future. Some simulations are taken to investigate the performance of the proposed quantum network and the result show that it can achieve accurate learning. Copyright © 2013 Elsevier Ltd. All rights reserved.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

Science.gov (United States)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Repetitive readout of a single electronic spin via quantum logic with nuclear spin ancillae.

Science.gov (United States)

Jiang, L; Hodges, J S; Maze, J R; Maurer, P; Taylor, J M; Cory, D G; Hemmer, P R; Walsworth, R L; Yacoby, A; Zibrov, A S; Lukin, M D

2009-10-09

Robust measurement of single quantum bits plays a key role in the realization of quantum computation and communication as well as in quantum metrology and sensing. We have implemented a method for the improved readout of single electronic spin qubits in solid-state systems. The method makes use of quantum logic operations on a system consisting of a single electronic spin and several proximal nuclear spin ancillae in order to repetitively readout the state of the electronic spin. Using coherent manipulation of a single nitrogen vacancy center in room-temperature diamond, full quantum control of an electronic-nuclear system consisting of up to three spins was achieved. We took advantage of a single nuclear-spin memory in order to obtain a 10-fold enhancement in the signal amplitude of the electronic spin readout. We also present a two-level, concatenated procedure to improve the readout by use of a pair of nuclear spin ancillae, an important step toward the realization of robust quantum information processors using electronic- and nuclear-spin qubits. Our technique can be used to improve the sensitivity and speed of spin-based nanoscale diamond magnetometers.

Single-cell atomic quantum memory for light

International Nuclear Information System (INIS)

Opatrny, Tomas

2006-01-01

Recent experiments demonstrating atomic quantum memory for light [B. Julsgaard et al., Nature 432, 482 (2004)] involve two macroscopic samples of atoms, each with opposite spin polarization. It is shown here that a single atomic cell is enough for the memory function if the atoms are optically pumped with suitable linearly polarized light, and quadratic Zeeman shift and/or ac Stark shift are used to manipulate rotations of the quadratures. This should enhance the performance of our quantum memory devices since less resources are needed and losses of light in crossing different media boundaries are avoided

Lateral surface superlattices in strained InGaAs layers

International Nuclear Information System (INIS)

Milton, B.

2000-08-01

Lateral Surface Superlattices were fabricated by etching in strained InGaAs layers above a GaAs/AlGaAs 2DEG channel. These were etched both by dry plasma wet chemical etching to produce periods of 100nm, 200nm and 300nm. These superlattices were fabricated on Hall bars to allow four terminal measurement and a blanket gate was placed on top, to allow variations in the carrier concentration. The magnetoresistance effects of these superlattices were studied at varying values of gate voltage, which varies the carrier concentration and the electrostatic periodic potential and at temperatures down to 45mK in a dilution refrigerator. From the oscillations observed in the magnetoresistance trace's it is possible to calculate the magnitude of the periodic potential. This showed that the etched, strained InGaAs was producing an anisotropic piezoelectric potential, along with an isotropic electrostatic potential. The variation in period allowed a study of the change of this piezoelectric potential with the period as well as a study of the interactions between the electrostatic and piezoelectric potentials. Further, at the lowest temperatures a strong interaction was observed between the Commensurability Oscillations, caused by the periodic potential, and the Shubnikov-de Haas Oscillations due to the Landau. Levels. This interaction was studied as it varied with temperature and carrier concentration. (author)

Numerical simulation of spin-qubit operation in coupled quantum dots

International Nuclear Information System (INIS)

Goto, Daisuke; Eto, Mikio

2007-01-01

Electronic states and spin operation in coupled quantum dots are numerically studied, considering realistic shape of quantum dots and electron-electron interaction. (i) We evaluate the spin coupling J between two electron spins, as a function of magnetic field perpendicular to the quantum dots. We observe a transition from antiferromagnetic coupling (J>0) to ferromagnetic coupling (J<0) at magnetic field of a few Tesla. The spin coupling is hardly influenced by the size difference between the quantum dots if the energy levels are matched. (ii) We simulate SWAP gate operations by calculating the time development of two electron spins. We show that a sudden change of tunnel barrier may result in the gate errors. The spin exchange is incomplete in the presence of strong spin-orbit interaction in InGaAs. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Quantum contextual phenomena observed in single-neutron interferometer experiments

International Nuclear Information System (INIS)

Hasegawa, Yuji; Rauch, Helmut

2006-01-01

Neutron optical experiments are presented, which exhibit quantum contextual phenomena. Entanglement is achieved not between particles, but between degrees of freedom, in this case, for a single-particle. Appropriate combinations of the direction of spin analysis and the position of the phase shifter allow an experimental verification of the violation of a Bell-like inequality. Our experiments manifest the fact that manipulation of the wavefunction in one Hilbert space influences the result of the measurement in the other Hilbert space: manipulation without touch! Next, we report another experiment which exhibits other peculiarity of quantum contextuality, e.g., originally intended to show a Kochen-Specker-like phenomenon. We have introduced inequalities for quantitative analysis of the experiments. The value obtained in the experiments clearly showed violations of prediction by non-contextual theory. Finally, we have accomplished a tomographic determination of entangled quantum state in single-neutrons. There, characteristics of the Bell-sate are confirmed: four poles for the real part of the density matrix are clearly seen

Authenticated Quantum Key Distribution with Collective Detection using Single Photons

Science.gov (United States)

Huang, Wei; Xu, Bing-Jie; Duan, Ji-Tong; Liu, Bin; Su, Qi; He, Yuan-Hang; Jia, Heng-Yue

2016-10-01

We present two authenticated quantum key distribution (AQKD) protocols by utilizing the idea of collective (eavesdropping) detection. One is a two-party AQKD protocol, the other is a multiparty AQKD protocol with star network topology. In these protocols, the classical channels need not be assumed to be authenticated and the single photons are used as the quantum information carriers. To achieve mutual identity authentication and establish a random key in each of the proposed protocols, only one participant should be capable of preparing and measuring single photons, and the main quantum ability that the rest of the participants should have is just performing certain unitary operations. Security analysis shows that these protocols are free from various kinds of attacks, especially the impersonation attack and the man-in-the-middle (MITM) attack.

InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform.

Science.gov (United States)

Park, Jin-Kown; Takagi, Shinichi; Takenaka, Mitsuru

2018-02-19

We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.

Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

Science.gov (United States)

Palumbo, F.; Pazos, S.; Aguirre, F.; Winter, R.; Krylov, I.; Eizenberg, M.

2017-06-01

The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution. At the present, he is a research staff of the National Council of Science and Technology (CONICET), working in the National Commission of Atomic Energy (CNEA) in Buenos Aires, Argentina, well embedded within international research collaboration. Since 2008, he is Professor at the National Technological University (UTN) in Buenos Aires, Argentina. Dr. Palumbo has received research fellowships from: Marie Curie Fellowship within the 7th European Community Framework Programme, Abdus Salam International Centre for Theoretical Physics (ICTP) Italy, National Council of Science and Technology (CONICET) Argentina, and Consiglio Nazionale delle Ricerche (CNR) Italy. He is also a frequent scientific visitor of academic institutions as IMM-CNR-Italy, Minatec Grenoble-France, the Autonomous University of Barcelona-Spain, and the Israel Institute of Technology-Technion. He has authored and co-authored more than 50 papers in international conferences and journals.

Probing correlated quantum many-body systems at the single-particle level

Energy Technology Data Exchange (ETDEWEB)

Endres, Manuel

2013-02-27

The detection of correlation and response functions plays a crucial role in the experimental characterization of quantum many-body systems. In this thesis, we present novel techniques for the measurement of such functions at the single-particle level. Specifically, we show the single-atom- and single-site-resolved detection of an ultracold quantum gas in an optical lattice. The quantum gas is described by the Bose-Hubbard model, which features a zero temperature phase transition from a superfluid to a Mott-insulating state, a paradigm example of a quantum phase transition. We used the aforementioned detection techniques to study correlation and response properties across the superfluid-Mott-insulator transition. The single-atom sensitivity of our method is achieved by fluorescence detection of individual atoms with a high signal-to-noise ratio. A high-resolution objective collects the fluorescence light and yields in situ 'snapshots' of the quantum gas that allow for a single-site-resolved reconstruction of the atomic distribution. This allowed us to measure two-site and non-local correlation-functions across the superfluid-Mott-insulator transition. Non-local correlation functions are based on the information of an extended region of the system and play an important role for the characterization of low-dimensional quantum phases. While non-local correlation functions were so far only theoretical tools, our results show that they are actually experimentally accessible. Furthermore, we used a new thermometry scheme, based on the counting of individual thermal excitations, to measure the response of the system to lattice modulation. Using this method, we studied the excitation spectrum of the system across the two-dimensional superfluid-Mott-insulator transition. In particular, we detected a 'Higgs' amplitude mode in the strongly-interacting superfluid close to the transition point where the system is described by an effectively Lorentz

Probing correlated quantum many-body systems at the single-particle level

International Nuclear Information System (INIS)

Endres, Manuel

2013-01-01

The detection of correlation and response functions plays a crucial role in the experimental characterization of quantum many-body systems. In this thesis, we present novel techniques for the measurement of such functions at the single-particle level. Specifically, we show the single-atom- and single-site-resolved detection of an ultracold quantum gas in an optical lattice. The quantum gas is described by the Bose-Hubbard model, which features a zero temperature phase transition from a superfluid to a Mott-insulating state, a paradigm example of a quantum phase transition. We used the aforementioned detection techniques to study correlation and response properties across the superfluid-Mott-insulator transition. The single-atom sensitivity of our method is achieved by fluorescence detection of individual atoms with a high signal-to-noise ratio. A high-resolution objective collects the fluorescence light and yields in situ 'snapshots' of the quantum gas that allow for a single-site-resolved reconstruction of the atomic distribution. This allowed us to measure two-site and non-local correlation-functions across the superfluid-Mott-insulator transition. Non-local correlation functions are based on the information of an extended region of the system and play an important role for the characterization of low-dimensional quantum phases. While non-local correlation functions were so far only theoretical tools, our results show that they are actually experimentally accessible. Furthermore, we used a new thermometry scheme, based on the counting of individual thermal excitations, to measure the response of the system to lattice modulation. Using this method, we studied the excitation spectrum of the system across the two-dimensional superfluid-Mott-insulator transition. In particular, we detected a 'Higgs' amplitude mode in the strongly-interacting superfluid close to the transition point where the system is described by an effectively Lorentz-invariant low-energy theory

Investigating and Improving Student Understanding of Quantum Mechanics in the Context of Single Photon Interference

Science.gov (United States)

Marshman, Emily; Singh, Chandralekha

2017-01-01

Single photon experiments involving a Mach-Zehnder interferometer can illustrate the fundamental principles of quantum mechanics, e.g., the wave-particle duality of a single photon, single photon interference, and the probabilistic nature of quantum measurement involving single photons. These experiments explicitly make the connection between the…

Fast synchrotron and FEL beam monitors based on single-crystal diamond detectors and InGaAs/InAlAs quantum well devices

Science.gov (United States)

Antonelli, M.; Di Fraia, M.; Carrato, S.; Cautero, G.; Menk, R. H.; Jark, W. H.; Ganbold, T.; Biasiol, G.; Callegari, C.; Coreno, M.; De Sio, A.; Pace, E.

2013-12-01

Simultaneous photon-beam position and intensity monitoring is becoming of increasing importance for new-generation synchrotron radiation sources and free-electron lasers (FEL). Thus, novel concepts of beam diagnostics are required in order to keep such beams under control. From this perspective diamond is a promising material for the production of semitransparent in situ photon beam monitors, which can withstand the high dose rates occurring in such radiation facilities. Here, we report on the development of freestanding, single-crystal chemical-vapor-deposited diamond detectors with segmented electrodes. Due to their direct, low-energy band gap, InGaAs quantum well devices operated at room temperature may also be used as fast detectors for photons ranging from visible to X-ray. These features are valuable in low-energy and time-resolved FEL applications. In particular, a novel segmented InGaAs/InAlAs device has been developed and will be discussed. Dedicated measurements carried out on both these devices at the Elettra Synchrotron show their capability to monitor the position and the intensity of the photon beam with bunch-by-bunch temporal performances. Furthermore, preliminary tests have been performed on diamond detectors at the Fermi FEL, extracting quantitative intensity and position information for 100-fs-wide FEL pulses with a photon energy of 28.8 eV.

Electro-optic routing of photons from a single quantum dot in photonic integrated circuits

Science.gov (United States)

Midolo, Leonardo; Hansen, Sofie L.; Zhang, Weili; Papon, Camille; Schott, Rüdiger; Ludwig, Arne; Wieck, Andreas D.; Lodahl, Peter; Stobbe, Søren

2017-12-01

Recent breakthroughs in solid-state photonic quantum technologies enable generating and detecting single photons with near-unity efficiency as required for a range of photonic quantum technologies. The lack of methods to simultaneously generate and control photons within the same chip, however, has formed a main obstacle to achieving efficient multi-qubit gates and to harness the advantages of chip-scale quantum photonics. Here we propose and demonstrate an integrated voltage-controlled phase shifter based on the electro-optic effect in suspended photonic waveguides with embedded quantum emitters. The phase control allows building a compact Mach-Zehnder interferometer with two orthogonal arms, taking advantage of the anisotropic electro-optic response in gallium arsenide. Photons emitted by single self-assembled quantum dots can be actively routed into the two outputs of the interferometer. These results, together with the observed sub-microsecond response time, constitute a significant step towards chip-scale single-photon-source de-multiplexing, fiber-loop boson sampling, and linear optical quantum computing.

Real-time single-molecule imaging of quantum interference.

Science.gov (United States)

Juffmann, Thomas; Milic, Adriana; Müllneritsch, Michael; Asenbaum, Peter; Tsukernik, Alexander; Tüxen, Jens; Mayor, Marcel; Cheshnovsky, Ori; Arndt, Markus

2012-03-25

The observation of interference patterns in double-slit experiments with massive particles is generally regarded as the ultimate demonstration of the quantum nature of these objects. Such matter-wave interference has been observed for electrons, neutrons, atoms and molecules and, in contrast to classical physics, quantum interference can be observed when single particles arrive at the detector one by one. The build-up of such patterns in experiments with electrons has been described as the "most beautiful experiment in physics". Here, we show how a combination of nanofabrication and nano-imaging allows us to record the full two-dimensional build-up of quantum interference patterns in real time for phthalocyanine molecules and for derivatives of phthalocyanine molecules, which have masses of 514 AMU and 1,298 AMU respectively. A laser-controlled micro-evaporation source was used to produce a beam of molecules with the required intensity and coherence, and the gratings were machined in 10-nm-thick silicon nitride membranes to reduce the effect of van der Waals forces. Wide-field fluorescence microscopy detected the position of each molecule with an accuracy of 10 nm and revealed the build-up of a deterministic ensemble interference pattern from single molecules that arrived stochastically at the detector. In addition to providing this particularly clear demonstration of wave-particle duality, our approach could also be used to study larger molecules and explore the boundary between quantum and classical physics.

Resonance fluorescence and quantum interference of a single NV center

Science.gov (United States)

Ma, Yong-Hong; Zhang, Xue-Feng; Wu, E.

2017-11-01

The detection of a single nitrogen-vacancy center in diamond has attracted much interest, since it is expected to lead to innovative applications in various domains of quantum information, including quantum metrology, information processing and communications, as well as in various nanotechnologies, such as biological and subdiffraction limit imaging, and tests of entanglement in quantum mechanics. We propose a novel scheme of a single NV center coupled with a multi-mode superconducting microwave cavity driven by coherent fields in squeezed vacuum. We numerically investigate the spectra in-phase quadrature and out-of-phase quadrature for different driving regimes with or without detunings. It shows that the maximum squeezing can be obtained for optimal Rabi fields. Moreover, with the same parameters, the maximum squeezing is greatly increased when the detunings are nonzero compared to the resonance case.

Coupling single-molecule magnets to quantum circuits

International Nuclear Information System (INIS)

Jenkins, Mark; Martínez-Pérez, María José; Zueco, David; Luis, Fernando; Hümmer, Thomas; García-Ripoll, Juanjo

2013-01-01

In this work we study theoretically the coupling of single-molecule magnets (SMMs) to a variety of quantum circuits, including microwave resonators with and without constrictions and flux qubits. The main result of this study is that it is possible to achieve strong and ultrastrong coupling regimes between SMM crystals and the superconducting circuit, with strong hints that such a coupling could also be reached for individual molecules close to constrictions. Building on the resulting coupling strengths and the typical coherence times of these molecules (∼ μs), we conclude that SMMs can be used for coherent storage and manipulation of quantum information, either in the context of quantum computing or in quantum simulations. Throughout the work we also discuss in detail the family of molecules that are most suitable for such operations, based not only on the coupling strength, but also on the typical energy gaps and the simplicity with which they can be tuned and oriented. Finally, we also discuss practical advantages of SMMs, such as the possibility to fabricate the SMMs ensembles on the chip through the deposition of small droplets. (paper)

Universal quantum computation with the orbital angular momentum of a single photon

International Nuclear Information System (INIS)

García-Escartín, Juan Carlos; Chamorro-Posada, Pedro

2011-01-01

We prove that a single photon with quantum data encoded in its orbital angular momentum can be manipulated with simple optical elements to provide any desired quantum computation. We will show how to build any quantum unitary operator using beamsplitters, phase shifters, holograms and an extraction gate based on quantum interrogation. The advantages and challenges of these approach are then discussed, in particular the problem of the readout of the results

Quantum ground state and single-phonon control of a mechanical resonator.

Science.gov (United States)

O'Connell, A D; Hofheinz, M; Ansmann, M; Bialczak, Radoslaw C; Lenander, M; Lucero, Erik; Neeley, M; Sank, D; Wang, H; Weides, M; Wenner, J; Martinis, John M; Cleland, A N

2010-04-01

Quantum mechanics provides a highly accurate description of a wide variety of physical systems. However, a demonstration that quantum mechanics applies equally to macroscopic mechanical systems has been a long-standing challenge, hindered by the difficulty of cooling a mechanical mode to its quantum ground state. The temperatures required are typically far below those attainable with standard cryogenic methods, so significant effort has been devoted to developing alternative cooling techniques. Once in the ground state, quantum-limited measurements must then be demonstrated. Here, using conventional cryogenic refrigeration, we show that we can cool a mechanical mode to its quantum ground state by using a microwave-frequency mechanical oscillator-a 'quantum drum'-coupled to a quantum bit, which is used to measure the quantum state of the resonator. We further show that we can controllably create single quantum excitations (phonons) in the resonator, thus taking the first steps to complete quantum control of a mechanical system.

Online evolution reconstruction from a single measurement record with random time intervals for quantum communication

Science.gov (United States)

Zhou, Hua; Su, Yang; Wang, Rong; Zhu, Yong; Shen, Huiping; Pu, Tao; Wu, Chuanxin; Zhao, Jiyong; Zhang, Baofu; Xu, Zhiyong

2017-10-01

Online reconstruction of a time-variant quantum state from the encoding/decoding results of quantum communication is addressed by developing a method of evolution reconstruction from a single measurement record with random time intervals. A time-variant two-dimensional state is reconstructed on the basis of recovering its expectation value functions of three nonorthogonal projectors from a random single measurement record, which is composed from the discarded qubits of the six-state protocol. The simulated results prove that our method is robust to typical metro quantum channels. Our work extends the Fourier-based method of evolution reconstruction from the version for a regular single measurement record with equal time intervals to a unified one, which can be applied to arbitrary single measurement records. The proposed protocol of evolution reconstruction runs concurrently with the one of quantum communication, which can facilitate the online quantum tomography.

Mode locking of electron spin coherences in singly charged quantum dots.

Science.gov (United States)

Greilich, A; Yakovlev, D R; Shabaev, A; Efros, Al L; Yugova, I A; Oulton, R; Stavarache, V; Reuter, D; Wieck, A; Bayer, M

2006-07-21

The fast dephasing of electron spins in an ensemble of quantum dots is detrimental for applications in quantum information processing. We show here that dephasing can be overcome by using a periodic train of light pulses to synchronize the phases of the precessing spins, and we demonstrate this effect in an ensemble of singly charged (In,Ga)As/GaAs quantum dots. This mode locking leads to constructive interference of contributions to Faraday rotation and presents potential applications based on robust quantum coherence within an ensemble of dots.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

International Nuclear Information System (INIS)

Lumb, M. P.; Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J.; González, M.; Bennett, M. F.; Herrera, M.; Delgado, F. J.; Molina, S. I.

2016-01-01

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm 2 to be realized.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

Energy Technology Data Exchange (ETDEWEB)

Lumb, M. P. [The George Washington University, Washington, DC 20037 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J. [US Naval Research Laboratory, Washington, DC 20375 (United States); González, M.; Bennett, M. F. [Sotera Defense Solutions, Annapolis Junction, Maryland 20701 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Herrera, M.; Delgado, F. J.; Molina, S. I. [University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

2016-05-21

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.

InAs migration on released, wrinkled InGaAs membranes used as virtual substrate

International Nuclear Information System (INIS)

Filipe Covre da Silva, S; Lanzoni, E M; De Araujo Barboza, V; Deneke, Ch; Malachias, A; Kiravittaya, S

2014-01-01

Partly released, relaxed and wrinkled InGaAs membranes are used as virtual substrates for overgrowth with InAs. Such samples exhibit different lattice parameters for the unreleased epitaxial parts, the released flat, back-bond areas and the released wrinkled areas. A large InAs migration towards the released membrane is observed with a material accumulation on top of the freestanding wrinkles during overgrowth. A semi-quantitative analysis of the misfit strain shows that the material migrates to the areas of the sample with the lowest misfit strain, which we consider as the areas of the lowest chemical potential of the surface. Material migration is also observed for the edge-supported, freestanding InGaAs membranes found on these samples. Our results show that the released, wrinkled nanomembranes offer a growth template for InAs deposition that fundamentally changes the migration behavior of the deposited material on the growth surface. (paper)

Quantum optics with single nanodiamonds flying over gold films: Towards a Robust quantum plasmonics

Energy Technology Data Exchange (ETDEWEB)

Mollet, O.; Drezet, A.; Huant, S. [Institut Néel, CNRS and Université Joseph Fourier, BP 166, F-38042 Grenoble (France)

2013-12-04

A nanodiamond (ND) hosting nitrogen-vacancy (NV) color centers is attached on the apex of an optical tip for near-field microscopy. Its fluorescence is used to launch surface plasmon-polaritons (SPPs) in a thin polycrystalline gold film. It is shown that the quantum nature of the initial source of light is preserved after conversion to SPPs. This opens the way to a deterministic quantum plasmonics, where single SPPs can be injected at well-defined positions in a plasmonic device produced by top-down approaches.

Longitudinal wave function control in single quantum dots with an applied magnetic field

Science.gov (United States)

Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A.; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai

2015-01-01

Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots. PMID:25624018

Longitudinal wave function control in single quantum dots with an applied magnetic field.

Science.gov (United States)

Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai

2015-01-27

Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots.

Tailoring quantum structures for active photonic crystals

DEFF Research Database (Denmark)

Kuznetsova, Nadezda

demonstrated various trench profiles along the [0-1-1] and [0-11] crystallographic directions. Selectively grown InGaAs/InP quantum wells (QWs) possessed distinct geometrical and optical properties in the cases of directly grown InGaAs and when an InP buffer was deposited underneath. The fabrication process...... consumption for on-chip and chip-to-chip optical communication. In order to develop metal-organic vapor phase epitaxial selective area etching and growth, a mask was fabricated in the HSQ e-beam resist including optimization of exposure and development conditions. By use of CBr4 as an etchant, in situ etching...

Single-copy entanglement in critical quantum spin chains

International Nuclear Information System (INIS)

Eisert, J.; Cramer, M.

2005-01-01

We consider the single-copy entanglement as a quantity to assess quantum correlations in the ground state in quantum many-body systems. We show for a large class of models that already on the level of single specimens of spin chains, criticality is accompanied with the possibility of distilling a maximally entangled state of arbitrary dimension from a sufficiently large block deterministically, with local operations and classical communication. These analytical results--which refine previous results on the divergence of block entropy as the rate at which maximally entangled pairs can be distilled from many identically prepared chains--are made quantitative for general isotropic translationally invariant spin chains that can be mapped onto a quasifree fermionic system, and for the anisotropic XY model. For the XX model, we provide the asymptotic scaling of ∼(1/6)log 2 (L), and contrast it with the block entropy

Theory of single quantum dot lasers: Pauli-blocking-enhanced anti-bunching

International Nuclear Information System (INIS)

Su, Yumian; Bimberg, Dieter; Carmele, Alexander; Richter, Marten; Knorr, Andreas; Lüdge, Kathy; Schöll, Eckehard

2011-01-01

We present a theoretical model to describe the dynamics of a single semiconductor quantum dot interacting with a microcavity system. The confined quantum dot levels are pumped electrically via a carrier reservoir. The investigated dynamics includes semiconductor-specific, reservoir-induced Pauli-blocking terms in the equations of the photon probability functions. This enables a direct study of the photon statistics of the quantum light emission in dependence on the different pumping rates

Can a quantum state over time resemble a quantum state at a single time?

Science.gov (United States)

Horsman, Dominic; Heunen, Chris; Pusey, Matthew F; Barrett, Jonathan; Spekkens, Robert W

2017-09-01

The standard formalism of quantum theory treats space and time in fundamentally different ways. In particular, a composite system at a given time is represented by a joint state, but the formalism does not prescribe a joint state for a composite of systems at different times. If there were a way of defining such a joint state, this would potentially permit a more even-handed treatment of space and time, and would strengthen the existing analogy between quantum states and classical probability distributions. Under the assumption that the joint state over time is an operator on the tensor product of single-time Hilbert spaces, we analyse various proposals for such a joint state, including one due to Leifer and Spekkens, one due to Fitzsimons, Jones and Vedral, and another based on discrete Wigner functions. Finding various problems with each, we identify five criteria for a quantum joint state over time to satisfy if it is to play a role similar to the standard joint state for a composite system: that it is a Hermitian operator on the tensor product of the single-time Hilbert spaces; that it represents probabilistic mixing appropriately; that it has the appropriate classical limit; that it has the appropriate single-time marginals; that composing over multiple time steps is associative. We show that no construction satisfies all these requirements. If Hermiticity is dropped, then there is an essentially unique construction that satisfies the remaining four criteria.

Bright single photon source based on self-aligned quantum dot–cavity systems

DEFF Research Database (Denmark)

Maier, Sebastian; Gold, Peter; Forchel, Alfred

2014-01-01

We report on a quasi-planar quantum-dot-based single-photon source that shows an unprecedented high extraction efficiency of 42% without complex photonic resonator geometries or post-growth nanofabrication. This very high efficiency originates from the coupling of the photons emitted by a quantum...... dot to a Gaussian shaped nanohill defect that naturally arises during epitaxial growth in a self-aligned manner. We investigate the morphology of these defects and characterize the photonic operation mechanism. Our results show that these naturally arising coupled quantum dot-defects provide a new...... avenue for efficient (up to 42% demonstrated) and pure (g2(0) value of 0.023) single-photon emission....

InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer

NARCIS (Netherlands)

Shu, Y.; Li, Gang; Tan, H.H.; Jagadish, C.; Karouta, F.

1996-01-01

In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser

Quantum confined Stark effects of single dopant in polarized hemispherical quantum dot: Two-dimensional finite difference approach and Ritz-Hassé variation method

Science.gov (United States)

El Harouny, El Hassan; Nakra Mohajer, Soukaina; Ibral, Asmaa; El Khamkhami, Jamal; Assaid, El Mahdi

2018-05-01

Eigenvalues equation of hydrogen-like off-center single donor impurity confined in polarized homogeneous hemispherical quantum dot deposited on a wetting layer, capped by insulated matrix and submitted to external uniform electric field is solved in the framework of the effective mass approximation. An infinitely deep potential is used to describe effects of quantum confinement due to conduction band offsets at surfaces where quantum dot and surrounding materials meet. Single donor ground state total and binding energies in presence of electric field are determined via two-dimensional finite difference approach and Ritz-Hassé variation principle. For the latter method, attractive coulomb correlation between electron and ionized single donor is taken into account in the expression of trial wave function. It appears that off-center single dopant binding energy, spatial extension and radial probability density are strongly dependent on hemisphere radius and single dopant position inside quantum dot. Influence of a uniform electric field is also investigated. It shows that Stark effect appears even for very small size dots and that single dopant energy shift is more significant when the single donor is near hemispherical surface.

Sustained State-Independent Quantum Contextual Correlations from a Single Ion

Science.gov (United States)

Leupold, F. M.; Malinowski, M.; Zhang, C.; Negnevitsky, V.; Alonso, J.; Home, J. P.; Cabello, A.

2018-05-01

We use a single trapped-ion qutrit to demonstrate the quantum-state-independent violation of noncontextuality inequalities using a sequence of randomly chosen quantum nondemolition projective measurements. We concatenate 53 ×106 sequential measurements of 13 observables, and unambiguously violate an optimal noncontextual bound. We use the same data set to characterize imperfections including signaling and repeatability of the measurements. The experimental sequence was generated in real time with a quantum random number generator integrated into our control system to select the subsequent observable with a latency below 50 μ s , which can be used to constrain contextual hidden-variable models that might describe our results. The state-recycling experimental procedure is resilient to noise and independent of the qutrit state, substantiating the fact that the contextual nature of quantum physics is connected to measurements and not necessarily to designated states. The use of extended sequences of quantum nondemolition measurements finds applications in the fields of sensing and quantum information.

Injection of a single electron from static to moving quantum dots.

Science.gov (United States)

Bertrand, Benoit; Hermelin, Sylvain; Mortemousque, Pierre-André; Takada, Shintaro; Yamamoto, Michihisa; Tarucha, Seigo; Ludwig, Arne; Wieck, Andreas D; Bäuerle, Christopher; Meunier, Tristan

2016-05-27

We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot. The moving quantum dots are created with surface acoustic waves (SAWs) in a long depleted channel. We demonstrate that the injection process is characterized by an activation law with a threshold that depends on the SAW amplitude and on the dot-channel potential gradient. By sufficiently increasing the SAW modulation amplitude, we can reach a regime where the transfer has unity probability and is potentially adiabatic. This study points to the relevant regime to use moving dots in quantum information protocols.

Quantum interference of electrically generated single photons from a quantum dot.

Science.gov (United States)

Patel, Raj B; Bennett, Anthony J; Cooper, Ken; Atkinson, Paola; Nicoll, Christine A; Ritchie, David A; Shields, Andrew J

2010-07-09

Quantum interference lies at the foundation of many protocols for scalable quantum computing and communication with linear optics. To observe these effects the light source must emit photons that are indistinguishable. From a technological standpoint, it would be beneficial to have electrical control over the emission. Here we report of an electrically driven single-photon source emitting indistinguishable photons. The device consists of a layer of InAs quantum dots embedded in the intrinsic region of a p-i-n diode. Indistinguishability of consecutive photons is tested in a two-photon interference experiment under two modes of operation, continuous and pulsed current injection. We also present a complete theory based on the interference of photons with a Lorentzian spectrum which we compare to both our continuous wave and pulsed experiments. In the former case, a visibility was measured limited only by the timing resolution of our detection system. In the case of pulsed injection, we employ a two-pulse voltage sequence which suppresses multi-photon emission and allows us to carry out temporal filtering of photons which have undergone dephasing. The characteristic Hong-Ou-Mandel 'dip' is measured, resulting in a visibility of 64 +/- 4%.

Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

DEFF Research Database (Denmark)

Xu, Zhangcheng

2004-01-01

deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate......The fabrication, characterization and exploitation of self-assembled quantum dot (QD) heterostructures have attracted much attention not only in basic research, but also by the promising device applications such as QD lasers. The Stranski-Krastanow (SK) growth and the submonolayer (SML) deposition...... deposition of 0.5 ML InAs and 2.5 MLGaAs. The growth, structure, and optical properties of SML InGaAs/GaAs QD heterostructures are investigated in detail. SML InGaAs/GaAs QD lasers lasing even at room temperature have been successfully realized. The gain properties of SML InGaAs QD lasers are studied...

Multi-group dynamic quantum secret sharing with single photons

Energy Technology Data Exchange (ETDEWEB)

Liu, Hongwei [School of Science and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Ma, Haiqiang, E-mail: hqma@bupt.edu.cn [School of Science and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Wei, Kejin [School of Science and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Yang, Xiuqing [School of Science, Beijing Jiaotong University, Beijing 100044 (China); Qu, Wenxiu; Dou, Tianqi; Chen, Yitian; Li, Ruixue; Zhu, Wu [School of Science and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

2016-07-15

In this letter, we propose a novel scheme for the realization of single-photon dynamic quantum secret sharing between a boss and three dynamic agent groups. In our system, the boss can not only choose one of these three groups to share the secret with, but also can share two sets of independent keys with two groups without redistribution. Furthermore, the security of communication is enhanced by using a control mode. Compared with previous schemes, our scheme is more flexible and will contribute to a practical application. - Highlights: • A multi-group dynamic quantum secret sharing with single photons scheme is proposed. • Any one of the groups can be chosen to share secret through controlling the polarization of photons. • Two sets of keys can be shared simultaneously without redistribution.

Single-photon sources for quantum technologies - Results of the joint research project SIQUTE

DEFF Research Database (Denmark)

Kück, S.; López, M.; Rodiek, B.

2017-01-01

In this presentation, the results of the joint research project “Single-Photon Sources for Quantum Technologies” (SIQUTE) [1] will be presented. The focus will be on the development of absolutely characterized single-photon sources, on the realization of an efficient waveguide-based single-photon......-photon source at the telecom wavelengths of 1.3 µm and 1.55 µm, on the implementation of the quantum-enhanced resolution in confocal fluorescence microscopy and on the development of a detector for very low photon fluxes...

Stability of quantum-dot excited-state laser emission under simultaneous ground-state perturbation

Energy Technology Data Exchange (ETDEWEB)

Kaptan, Y., E-mail: yuecel.kaptan@physik.tu-berlin.de; Herzog, B.; Schöps, O.; Kolarczik, M.; Woggon, U.; Owschimikow, N. [Institut für Optik und Atomare Physik, Technische Universität Berlin, Berlin (Germany); Röhm, A.; Lingnau, B.; Lüdge, K. [Institut für Theoretische Physik, Technische Universität Berlin, Berlin (Germany); Schmeckebier, H.; Arsenijević, D.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin (Germany); Mikhelashvili, V.; Eisenstein, G. [Technion Institute of Technology, Faculty of Electrical Engineering, Haifa (Israel)

2014-11-10

The impact of ground state amplification on the laser emission of In(Ga)As quantum dot excited state lasers is studied in time-resolved experiments. We find that a depopulation of the quantum dot ground state is followed by a drop in excited state lasing intensity. The magnitude of the drop is strongly dependent on the wavelength of the depletion pulse and the applied injection current. Numerical simulations based on laser rate equations reproduce the experimental results and explain the wavelength dependence by the different dynamics in lasing and non-lasing sub-ensembles within the inhomogeneously broadened quantum dots. At high injection levels, the observed response even upon perturbation of the lasing sub-ensemble is small and followed by a fast recovery, thus supporting the capacity of fast modulation in dual-state devices.

Scanning capacitance microscopy investigations of InGaAs/InP quantum wells

International Nuclear Information System (INIS)

Douheret, O.; Maknys, K.; Anand, S.

2004-01-01

In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate InGaAs/InP (latticed matched) quantum wells grown by metal-organic vapor phase epitaxy. Using n-doped InP as barriers with different doping levels, different InGaAs wells structures (5, 10 and 20 nm) were investigated. The capability of SCM to detect electrons in the quantum wells is demonstrated, showing in addition, a systematic and consistent trend for the different well widths and barrier doping levels. The SCM results are qualitatively consistent with electron distribution obtained for 1D Poisson/Schroedinger simulation. Finally, resolution issues in SCM are discussed in terms of tip averaging effects

Simulation of a quantum NOT gate for a single qutrit system

Indian Academy of Sciences (India)

In order to achieve a quantum NOT gate for a single qutrit, the respective Schrödinger equation is solved numerically within a two-photon rotating wave approximation. For small values of one-photon detuning, there appear decoherence effects. Meanwhile, for large values of onephoton detuning, an ideal quantum NOT gate ...

Stopping single photons in one-dimensional circuit quantum electrodynamics systems

International Nuclear Information System (INIS)

Shen, J.-T.; Povinelli, M. L.; Sandhu, Sunil; Fan Shanhui

2007-01-01

We propose a mechanism to stop and time reverse single photons in one-dimensional circuit quantum electrodynamics systems. As a concrete example, we exploit the large tunability of the superconducting charge quantum bit (charge qubit) to predict one-photon transport properties in multiple-qubit systems with dynamically controlled transition frequencies. In particular, two qubits coupled to a waveguide give rise to a single-photon transmission line shape that is analogous to electromagnetically induced transparency in atomic systems. Furthermore, by cascading double-qubit structures to form an array and dynamically controlling the qubit transition frequencies, a single photon can be stopped, stored, and time reversed. With a properly designed array, two photons can be stopped and stored in the system at the same time. Moreover, the unit cell of the array can be designed to be of deep subwavelength scale, miniaturizing the circuit

Quantum turnstile operation of single-molecule magnets

International Nuclear Information System (INIS)

Moldoveanu, V; Dinu, I V; Tanatar, B; Moca, C P

2015-01-01

The time-dependent transport through single-molecule magnets coupled to magnetic or non-magnetic electrodes is studied in the framework of the generalized master equation method. We investigate the transient regime induced by the periodic switching of the source and drain contacts. If the electrodes have opposite magnetizations the quantum turnstile operation allows the stepwise writing of intermediate excited states. In turn, the transient currents provide a way to read these states. Within our approach we take into account both the uniaxial and transverse anisotropy. The latter may induce additional quantum tunneling processes which affect the efficiency of the proposed read-and-write scheme. An equally weighted mixture of molecular spin states can be prepared if one of the electrodes is ferromagnetic. (paper)

Conjugation of biotin-coated luminescent quantum dots with single domain antibody-rhizavidin fusions

Directory of Open Access Journals (Sweden)

Jinny L. Liu

2016-06-01

Full Text Available Straightforward and effective methods are required for the bioconjugation of proteins to surfaces and particles. Previously we demonstrated that the fusion of a single domain antibody with the biotin binding molecule rhizavidin provided a facile method to coat biotin-modified surfaces with a highly active and oriented antibody. Here, we constructed similar single domain antibody—rhizavidin fusions as well as unfused rhizavidin with a His-tag. The unfused rhizavidin produced efficiently and its utility for assay development was demonstrated in surface plasmon resonance experiments. The single domain antibody-rhizavidin fusions were utilized to coat quantum dots that had been prepared with surface biotins. Preparation of antibody coated quantum dots by this means was found to be both easy and effective. The prepared single domain antibody-quantum dot reagent was characterized by surface plasmon resonance and applied to toxin detection in a fluoroimmunoassay sensing format.

Cavity Exciton-Polariton mediated, Single-Shot Quantum Non-Demolition measurement of a Quantum Dot Electron Spin

Science.gov (United States)

Puri, Shruti; McMahon, Peter; Yamamoto, Yoshihisa

2014-03-01

The quantum non-demolition (QND) measurement of a single electron spin is of great importance in measurement-based quantum computing schemes. The current single-shot readout demonstrations exhibit substantial spin-flip backaction. We propose a QND readout scheme for quantum dot (QD) electron spins in Faraday geometry, which differs from previous proposals and implementations in that it relies on a novel physical mechanism: the spin-dependent Coulomb exchange interaction between a QD spin and optically-excited quantum well (QW) microcavity exciton-polaritons. The Coulomb exchange interaction causes a spin-dependent shift in the resonance energy of the polarized polaritons, thus causing the phase and intensity response of left circularly polarized light to be different to that of the right circularly polarized light. As a result the QD electron's spin can be inferred from the response to a linearly polarized probe. We show that by a careful design of the system, any spin-flip backaction can be eliminated and a QND measurement of the QD electron spin can be performed within a few 10's of nanoseconds with fidelity 99:95%. This improves upon current optical QD spin readout techniques across multiple metrics, including fidelity, speed and scalability. National Institute of Informatics, 2-1-2 Hitotsubashi, Chiyoda-ku, Tokyo 101-8430, Japan.

GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications

Czech Academy of Sciences Publication Activity Database

Vyskočil, Jan; Hospodková, Alice; Petříček, Otto; Pangrác, Jiří; Zíková, Markéta; Oswald, Jiří; Vetushka, Aliaksi

2017-01-01

Roč. 464, Apr (2017), s. 64-68 ISSN 0022-0248 R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : InAs * GaAsSb * InGaAs * quantum dot * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

Quantum Dot Platform for Single-Cell Molecular Profiling

Science.gov (United States)

Zrazhevskiy, Pavel S.

In-depth understanding of the nature of cell physiology and ability to diagnose and control the progression of pathological processes heavily rely on untangling the complexity of intracellular molecular mechanisms and pathways. Therefore, comprehensive molecular profiling of individual cells within the context of their natural tissue or cell culture microenvironment is essential. In principle, this goal can be achieved by tagging each molecular target with a unique reporter probe and detecting its localization with high sensitivity at sub-cellular resolution, primarily via microscopy-based imaging. Yet, neither widely used conventional methods nor more advanced nanoparticle-based techniques have been able to address this task up to date. High multiplexing potential of fluorescent probes is heavily restrained by the inability to uniquely match probes with corresponding molecular targets. This issue is especially relevant for quantum dot probes---while simultaneous spectral imaging of up to 10 different probes is possible, only few can be used concurrently for staining with existing methods. To fully utilize multiplexing potential of quantum dots, it is necessary to design a new staining platform featuring unique assignment of each target to a corresponding quantum dot probe. This dissertation presents two complementary versatile approaches towards achieving comprehensive single-cell molecular profiling and describes engineering of quantum dot probes specifically tailored for each staining method. Analysis of expanded molecular profiles is achieved through augmenting parallel multiplexing capacity with performing several staining cycles on the same specimen in sequential manner. In contrast to other methods utilizing quantum dots or other nanoparticles, which often involve sophisticated probe synthesis, the platform technology presented here takes advantage of simple covalent bioconjugation and non-covalent self-assembly mechanisms for straightforward probe

A highly efficient single-photon source based on a quantum dot in a photonic nanowire

DEFF Research Database (Denmark)

Claudon, Julien; Bleuse, Joel; Malik, Nitin Singh

2010-01-01

–4 or a semiconductor quantum dot5–7. Achieving a high extraction efficiency has long been recognized as a major issue, and both classical solutions8 and cavity quantum electrodynamics effects have been applied1,9–12. We adopt a different approach, based on an InAs quantum dot embedded in a GaAs photonic nanowire......The development of efficient solid-state sources of single photons is a major challenge in the context of quantum communication,optical quantum information processing and metrology1. Such a source must enable the implementation of a stable, single-photon emitter, like a colour centre in diamond2...

Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots

International Nuclear Information System (INIS)

Norris, T B; Kim, K; Urayama, J; Wu, Z K; Singh, J; Bhattacharya, P K

2005-01-01

We have used two- and three-pulse femtosecond differential transmission spectroscopy to study the dependence of quantum dot carrier dynamics on temperature. At low temperatures and densities, the rates for relaxation between the quantum dot confined states and for capture from the barrier region into the various dot levels could be directly determined. For electron-hole pairs generated directly in the quantum dot excited state, relaxation is dominated by electron-hole scattering, and occurs on a 5 ps time scale. Capture times from the barrier into the quantum dot are of the order of 2 ps (into the excited state) and 10 ps (into the ground state). The phonon bottleneck was clearly observed in low-density capture experiments, and the conditions for its observation (namely, the suppression of electron-hole scattering for nongeminately captured electrons) were determined. As temperature increases beyond about 100 K, the dynamics become dominated by the re-emission of carriers from the lower dot levels, due to the large density of states in the wetting layer and barrier region. Measurements of the gain dynamics show fast (130 fs) gain recovery due to intradot carrier-carrier scattering, and picosecond-scale capture. Direct measurement of the transparency density versus temperature shows the dramatic effect of carrier re-emission for the quantum dots on thermally activated scattering. The carrier dynamics at elevated temperature are thus strongly dominated by the high density of the high energy continuum states relative to the dot confined levels. Deleterious hot carrier effects can be suppressed in quantum dot lasers by resonant tunnelling injection

Quantum Interference between Autonomous Single-Photon Sources from Doppler-Broadened Atomic Ensemble

OpenAIRE

Jeong, Teak; Lee, Yoon-Seok; Park, Jiho; Kim, Heonoh; Moon, Han Seb

2017-01-01

To realize a quantum network based on quantum entanglement swapping, bright and completely autonomous sources are essentially required. Here, we experimentally demonstrate Hong-Ou-Mandel (HOM) quantum interference between two independent bright photon pairs generated via the spontaneous four-wave mixing in Doppler-broadened ladder-type 87Rb atoms. Bright autonomous heralded single photons are operated in a continuous-wave (CW) mode with no synchronization or supplemental filters. The four-fol...

Elliptical quantum dots as on-demand single photons sources with deterministic polarization states

Energy Technology Data Exchange (ETDEWEB)

Teng, Chu-Hsiang; Demory, Brandon; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48105 (United States); Zhang, Lei; Hill, Tyler A.; Deng, Hui [Department of Mechanical Engineering, University of Michigan, 2350 Hayward St., Ann Arbor, Michigan 48105 (United States)

2015-11-09

In quantum information, control of the single photon's polarization is essential. Here, we demonstrate single photon generation in a pre-programmed and deterministic polarization state, on a chip-scale platform, utilizing site-controlled elliptical quantum dots (QDs) synthesized by a top-down approach. The polarization from the QD emission is found to be linear with a high degree of linear polarization and parallel to the long axis of the ellipse. Single photon emission with orthogonal polarizations is achieved, and the dependence of the degree of linear polarization on the QD geometry is analyzed.

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

Directory of Open Access Journals (Sweden)

Wu Jiang

2010-01-01

Full Text Available Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100, (210, (311, and (731 substrates. A broad photoluminescence emission peak (~950 nm with a full width at half maximum (FWHM of 48 nm is obtained from the sample grown on (210 substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100 substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311 with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

Fidelity of Quantum Teleportation for Single-Mode Squeezed State Light

Institute of Scientific and Technical Information of China (English)

ZHANG Jun-Xiang; XIE Chang-De; PENG Kun-Chi

2005-01-01

@@ The fidelity of quantum teleportation of a single-mode squeezed state of light is calculated based on the general theory of quantum-mechanical measurement in the Schrodinger picture. It is shown that the criterion for the nonclassical state teleportation is different from that for coherent state. F = 1/2 is no longer the rigorous boundary between classical and quantum teleportation for a squeezed state of light. When the quantum entanglement of an Einstein-Podolsky-Rosen (EPR) beam used for teleportation and the parameters of the system are given,the fidelity depends on the squeezing of the input squeezed state. The higher the squeezing is, the smaller the fidelity is, and the lower the classical limitation of fidelity is. The dependence of the optimum gain for teleporting a squeezed vacuum state upon the EPR entanglement is also calculated. The results obtained provide important references for designing experimental systems of teleporting a non-classical state and judging the quality of the teleported quantum state.

Double-slit experiment with single wave-driven particles and its relation to quantum mechanics.

Science.gov (United States)

Andersen, Anders; Madsen, Jacob; Reichelt, Christian; Rosenlund Ahl, Sonja; Lautrup, Benny; Ellegaard, Clive; Levinsen, Mogens T; Bohr, Tomas

2015-07-01

In a thought-provoking paper, Couder and Fort [Phys. Rev. Lett. 97, 154101 (2006)] describe a version of the famous double-slit experiment performed with droplets bouncing on a vertically vibrated fluid surface. In the experiment, an interference pattern in the single-particle statistics is found even though it is possible to determine unambiguously which slit the walking droplet passes. Here we argue, however, that the single-particle statistics in such an experiment will be fundamentally different from the single-particle statistics of quantum mechanics. Quantum mechanical interference takes place between different classical paths with precise amplitude and phase relations. In the double-slit experiment with walking droplets, these relations are lost since one of the paths is singled out by the droplet. To support our conclusions, we have carried out our own double-slit experiment, and our results, in particular the long and variable slit passage times of the droplets, cast strong doubt on the feasibility of the interference claimed by Couder and Fort. To understand theoretically the limitations of wave-driven particle systems as analogs to quantum mechanics, we introduce a Schrödinger equation with a source term originating from a localized particle that generates a wave while being simultaneously guided by it. We show that the ensuing particle-wave dynamics can capture some characteristics of quantum mechanics such as orbital quantization. However, the particle-wave dynamics can not reproduce quantum mechanics in general, and we show that the single-particle statistics for our model in a double-slit experiment with an additional splitter plate differs qualitatively from that of quantum mechanics.

Double-slit experiment with single wave-driven particles and its relation to quantum mechanics

Science.gov (United States)

Andersen, Anders; Madsen, Jacob; Reichelt, Christian; Rosenlund Ahl, Sonja; Lautrup, Benny; Ellegaard, Clive; Levinsen, Mogens T.; Bohr, Tomas

2015-07-01

In a thought-provoking paper, Couder and Fort [Phys. Rev. Lett. 97, 154101 (2006), 10.1103/PhysRevLett.97.154101] describe a version of the famous double-slit experiment performed with droplets bouncing on a vertically vibrated fluid surface. In the experiment, an interference pattern in the single-particle statistics is found even though it is possible to determine unambiguously which slit the walking droplet passes. Here we argue, however, that the single-particle statistics in such an experiment will be fundamentally different from the single-particle statistics of quantum mechanics. Quantum mechanical interference takes place between different classical paths with precise amplitude and phase relations. In the double-slit experiment with walking droplets, these relations are lost since one of the paths is singled out by the droplet. To support our conclusions, we have carried out our own double-slit experiment, and our results, in particular the long and variable slit passage times of the droplets, cast strong doubt on the feasibility of the interference claimed by Couder and Fort. To understand theoretically the limitations of wave-driven particle systems as analogs to quantum mechanics, we introduce a Schrödinger equation with a source term originating from a localized particle that generates a wave while being simultaneously guided by it. We show that the ensuing particle-wave dynamics can capture some characteristics of quantum mechanics such as orbital quantization. However, the particle-wave dynamics can not reproduce quantum mechanics in general, and we show that the single-particle statistics for our model in a double-slit experiment with an additional splitter plate differs qualitatively from that of quantum mechanics.

Opto-electronic and quantum transport properties of semiconductor nanostructures

Energy Technology Data Exchange (ETDEWEB)

Sabathil, M.

2005-01-01

In this work a novel and efficient method for the calculation of the ballistic transport properties of open semiconductor nanostructures connected to external reservoirs is presented. It is based on the Green's function formalism and reduces the effort to obtain the transmission and the carrier density to a single solution of a hermitian eigenvalue problem with dimensions proportional to the size of the decoupled device and the multiple inversion of a small matrix with dimensions proportional to the size of the contacts to the leads. Using this method, the 4-band GaAs hole transport through a 2-dimensional three-terminal T-junction device, and the resonant tunneling current through a 3-dimensional InAs quantum dot molecule embedded into an InP heterostructure have been calculated. The further extension of the method into a charge self-consistent scheme enables the efficient prediction of the IV-characteristics of highly doped nanoscale field effect transistors in the ballistic regime, including the influence of quasi bound states and the exchange-correlation interaction. Buettiker probes are used to emulate the effect of inelastic scattering on the current for simple 1D devices, systematically analyzing the dependence of the density of states and the resulting self-consistent potential on the scattering strength. The second major topic of this work is the modeling of the optical response of quantum confined neutral and charged excitons in single and coupled self-assembled InGaAs quantum dots. For this purpose the existing device simulator nextnano{sup 3} has been extended to incorporate particle-particle interactions within the means of density functional theory in local density approximation. In this way the exciton transition energies for neutral and charged excitons as a function of an externally applied electric field have been calculated, revealing a systematic reduction of the intrinsic dipole with the addition of extra holes to the exciton, a finding

Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE

International Nuclear Information System (INIS)

Sasaki, Takuo; Takahasi, Masamitu; Norman, Andrew G.; Romero, Manuel J.; Al-Jassim, Mowafak M.; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2013-01-01

Defect characterization in molecular beam epitaxial (MBE) compositionally-graded In x Ga 1-x As layers on GaAs substrates consisting different thickness of overshooting (OS) layers was carried out using cathodoluminescence (CL) and transmission electron microscopy (TEM). We found that the thickness of the OS layer influences not only stress but also lattice defects generated in a top InGaAs layer. While the top InGaAs layer with a thin OS layer is under compression and has mainly threading dislocations, the top layer with a thick OS layer is under tension and exhibits inhomogeneous strain associating with phase separation. We will discuss the mechanisms of defect generation and their in-plane distribution based on strain relaxation at the top and OS layers. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Negative quantum capacitance induced by midgap states in single-layer graphene.

Science.gov (United States)

Wang, Lin; Wang, Yang; Chen, Xiaolong; Zhu, Wei; Zhu, Chao; Wu, Zefei; Han, Yu; Zhang, Mingwei; Li, Wei; He, Yuheng; Xiong, Wei; Law, Kam Tuen; Su, Dangsheng; Wang, Ning

2013-01-01

We demonstrate that single-layer graphene (SLG) decorated with a high density of Ag adatoms displays the unconventional phenomenon of negative quantum capacitance. The Ag adatoms act as resonant impurities and form nearly dispersionless resonant impurity bands near the charge neutrality point (CNP). Resonant impurities quench the kinetic energy and drive the electrons to the Coulomb energy dominated regime with negative compressibility. In the absence of a magnetic field, negative quantum capacitance is observed near the CNP. In the quantum Hall regime, negative quantum capacitance behavior at several Landau level positions is displayed, which is associated with the quenching of kinetic energy by the formation of Landau levels. The negative quantum capacitance effect near the CNP is further enhanced in the presence of Landau levels due to the magnetic-field-enhanced Coulomb interactions.

Carrier relaxation in (In,Ga)As quantum dots with magnetic field-induced anharmonic level structure

Energy Technology Data Exchange (ETDEWEB)

Kurtze, H.; Bayer, M. [Experimentelle Physik 2, TU Dortmund, D-44221 Dortmund (Germany)

2016-07-04

Sophisticated models have been worked out to explain the fast relaxation of carriers into quantum dot ground states after non-resonant excitation, overcoming the originally proposed phonon bottleneck. We apply a magnetic field along the quantum dot heterostructure growth direction to transform the confined level structure, which can be approximated by a Fock–Darwin spectrum, from a nearly equidistant level spacing at zero field to strong anharmonicity in finite fields. This changeover leaves the ground state carrier population rise time unchanged suggesting that fast relaxation is maintained upon considerable changes of the level spacing. This corroborates recent models explaining the relaxation by polaron formation in combination with quantum kinetic effects.

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Czech Academy of Sciences Publication Activity Database

Dimitrakopulos, G.P.; Bazioti, C.; Grym, Jan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Pacherová, Oliva; Komninou, Ph.

2014-01-01

Roč. 306, Jul (2014), s. 89-93 ISSN 0169-4332 R&D Projects: GA MŠk 7AMB12GR034 Institutional support: RVO:68378271 ; RVO:67985882 Keywords : compound semiconductors * InGaAs * porous substrate * misfit dislocations * strain Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.711, year: 2014

Security of a single-state semi-quantum key distribution protocol

Science.gov (United States)

Zhang, Wei; Qiu, Daowen; Mateus, Paulo

2018-06-01

Semi-quantum key distribution protocols are allowed to set up a secure secret key between two users. Compared with their full quantum counterparts, one of the two users is restricted to perform some "classical" or "semi-quantum" operations, which potentially makes them easily realizable by using less quantum resource. However, the semi-quantum key distribution protocols mainly rely on a two-way quantum channel. The eavesdropper has two opportunities to intercept the quantum states transmitted in the quantum communication stage. It may allow the eavesdropper to get more information and make the security analysis more complicated. In the past ten years, many semi-quantum key distribution protocols have been proposed and proved to be robust. However, there are few works concerning their unconditional security. It is doubted that how secure the semi-quantum ones are and how much noise they can tolerate to establish a secure secret key. In this paper, we prove the unconditional security of a single-state semi-quantum key distribution protocol proposed by Zou et al. (Phys Rev A 79:052312, 2009). We present a complete proof from information theory aspect by deriving a lower bound of the protocol's key rate in the asymptotic scenario. Using this bound, we figure out an error threshold value such that for all error rates that are less than this threshold value, the secure secret key can be established between the legitimate users definitely. Otherwise, the users should abort the protocol. We make an illustration of the protocol under the circumstance that the reverse quantum channel is a depolarizing one with parameter q. Additionally, we compare the error threshold value with some full quantum protocols and several existing semi-quantum ones whose unconditional security proofs have been provided recently.

Single trapped cold ions: a testing ground for quantum mechanics

International Nuclear Information System (INIS)

Maniscalco, S

2005-01-01

In this article I review some results obtained during my PhD work in the group of Professor Messina, at the University of Palermo. I discuss some proposals aimed at exploring fundamental issues of quantum theory, e.g. entanglement and quantum superpositions, in the context of single trapped ions. This physical context turns out to be extremely well suited both for studying fundamental features of quantum mechanics, such as the quantum-classical border, and for technological applications such as quantum logic gates and quantum registers. I focus on some procedures for engineering nonclassical states of the vibrational motion of the centre of mass of the ion. I consider both the case in which the ion interacts with classical laser beams and the case of interaction with a quantized mode of light. In particular, I discuss the generation of Schroedinger cat-like states, Bell states and Greenberger-Horn-Zeilinger states. The schemes for generating nonclassical states stem from two different quantum processes: the parity effect and the quantum state manipulation via quantum non-demolition measurement. Finally, I consider a microscopic theory of the interaction of a quantum harmonic oscillator (the centre of mass of the ion in the trapped ion context) with a bosonic thermal environment. Using an exact approach to the dynamics, I discuss a quantum theory of heating of trapped ions able to describe both the short time non-Markovian regime and the thermalization process. I conclude showing briefly how the trapped ion systems can be used as simulators of key models of open quantum systems such as the Caldeira-Leggett model. (phd tutorial)

Experimental quantum tossing of a single coin

International Nuclear Information System (INIS)

Nguyen, A T; Frison, J; Massar, S; Huy, K Phan

2008-01-01

The cryptographic protocol of coin tossing consists of two parties, Alice and Bob, who do not trust each other, but want to generate a random bit. If the parties use a classical communication channel and have unlimited computational resources, one of them can always cheat perfectly. If the parties use a quantum communication channel, there exist protocols such that neither party can cheat perfectly, although they may be able to significantly bias the coin. Here, we analyze in detail how the performance of a quantum coin tossing experiment should be compared to classical protocols, taking into account the inevitable experimental imperfections. We then report an all-optical fiber experiment in which a single coin is tossed whose randomness is higher than achievable by any classical protocol and present some easily realizable cheating strategies by Alice and Bob

Single-photon generation with InAs quantum dots

International Nuclear Information System (INIS)

Santori, Charles; Fattal, David; Vuckovic, Jelena; Solomon, Glenn S; Yamamoto, Yoshihisa

2004-01-01

Single-photon generation using InAs quantum dots in pillar microcavities is described. The effects on performance of the excitation wavelength and polarization, and the collection bandwidth and polarization, are studied in detail. The efficiency and photon state purity of these devices have been measured, and issues affecting these parameters are discussed. Prospects for improved devices are also discussed

Nuclear magnetic resonance on a single quantum dot and a quantum dot in a nanowire system: quantum photonics and opto-mechanical coupling

OpenAIRE

Wüst, Gunter Johannes

2015-01-01

Self-assembled semiconductor quantum dots (QD) are excellent single photon sources and possible hosts for electron spin qubits, which can be initialized, manipulated and read-out optically. The nuclear spins in nano-structured semiconductors play a central role in quantum applications. The nuclear spins represent a useful resource for generating local magnetic fields but nuclear spin noise represents a major source of dephasing for spin qubits. Controlling the nuclear spins enhances the resou...

Free-space quantum electrodynamics with a single Rydberg superatom

DEFF Research Database (Denmark)

Paris-Mandoki, Asaf; Braun, Christoph; Kumlin, Jan

2017-01-01

The interaction of a single photon with an individual two-level system is the textbook example of quantum electrodynamics. Achieving strong coupling in this system has so far required confinement of the light field inside resonators or waveguides. Here, we demonstrate strong coherent coupling...

Waveguide superconducting single-photon autocorrelators for quantum photonic applications

NARCIS (Netherlands)

Sahin, D.; Gaggero, A.; Frucci, G.; Jahanmirinejad, S.; Sprengers, J.P.; Mattioli, F.; Leoni, R.; Beetz, J.; Lermer, M.; Kamp, M.; Höfling, S.; Fiore, A.; Hasan, Z.U.; Hemmer, P.R.; Lee, H.; Santori, C.M.

2013-01-01

We report a novel component for integrated quantum photonic applications, a waveguide single-photon autocorrelator. It is based on two superconducting nanowire detectors patterned onto the same GaAs ridge waveguide. Combining the electrical output of the two detectors in a correlation card enables

Noise characteristics analysis of short wave infrared InGaAs focal plane arrays

Science.gov (United States)

Yu, Chunlei; Li, Xue; Yang, Bo; Huang, Songlei; Shao, Xiumei; Zhang, Yaguang; Gong, Haimei

2017-09-01

The increasing application of InGaAs short wave infrared (SWIR) focal plane arrays (FPAs) in low light level imaging requires ultra-low noise FPAs. This paper presents the theoretical analysis of FPA noise, and point out that both dark current and detector capacitance strongly affect the FPA noise. The impact of dark current and detector capacitance on FPA noise is compared in different situations. In order to obtain low noise performance FPAs, the demand for reducing detector capacitance is higher especially when pixel pitch is smaller, integration time is shorter, and integration capacitance is larger. Several InGaAs FPAs were measured and analyzed, the experiments' results could be well fitted to the calculated results. The study found that the major contributor of FPA noise is coupled noise with shorter integration time. The influence of detector capacitance on FPA noise is more significant than that of dark current. To investigate the effect of detector performance on FPA noise, two kinds of photodiodes with different concentration of the absorption layer were fabricated. The detectors' performance and noise characteristics were measured and analyzed, the results are consistent with that of theoretical analysis.

Excitonic effects in the luminescence of quantum wells

International Nuclear Information System (INIS)

Deveaud, B.; Kappei, L.; Berney, J.; Morier-Genoud, F.; Portella-Oberli, M.T.; Szczytko, J.; Piermarocchi, C.

2005-01-01

We report on the origin of the excitonic luminescence in quantum wells. This study is carried out by time-resolved photoluminescence experiments performed on a very high-quality InGaAs quantum well sample in which the photoluminescence contributions at the energy of the exciton and at the band edge can be clearly separated and traced over a broad range of times and densities. This allows us to compare the two conflicting theoretical approaches to the question of the origin of the excitonic luminescence in quantum wells: the model of the exciton population and the model of the Coulomb correlated plasma. We measure the exciton formation time and we show the fast exciton formation and its dependence with carrier density. We are also able to give the boundaries of the Mott transition in our system, and to show the absence of observable renormalization of the gap below the onset of this transition. We detail the characteristics of the trion formation and evidence the possible formation of both positive and negative trions in the absence of any resident free carrier populations

Operation of a quantum dot in the finite-state machine mode: Single-electron dynamic memory

International Nuclear Information System (INIS)

Klymenko, M. V.; Klein, M.; Levine, R. D.; Remacle, F.

2016-01-01

A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we model the dynamical response of devices consisting of a charge sensor coupled to either a single and or a double quantum dot subjected to a pulsed gate voltage. We show that transition rates between charge states in metallic quantum dots are characterized by an asymmetry that can be controlled by the gate voltage. This effect is more pronounced when the switching between charge states corresponds to a Markovian process involving electron transport through a chain of several quantum dots. By simulating the dynamics of electron transport we demonstrate that the quantum box operates as a finite-state machine that can be addressed by choosing suitable shapes and switching rates of the gate pulses. We further show that writing times in the ns range and retention memory times six orders of magnitude longer, in the ms range, can be achieved on the double quantum dot system using experimentally feasible parameters, thereby demonstrating that the device can operate as a dynamic single electron memory.

Operation of a quantum dot in the finite-state machine mode: Single-electron dynamic memory

Energy Technology Data Exchange (ETDEWEB)

Klymenko, M. V. [Department of Chemistry, University of Liège, B4000 Liège (Belgium); Klein, M. [The Fritz Haber Center for Molecular Dynamics and the Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Levine, R. D. [The Fritz Haber Center for Molecular Dynamics and the Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Crump Institute for Molecular Imaging and Department of Molecular and Medical Pharmacology, David Geffen School of Medicine and Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095 (United States); Remacle, F., E-mail: fremacle@ulg.ac.be [Department of Chemistry, University of Liège, B4000 Liège (Belgium); The Fritz Haber Center for Molecular Dynamics and the Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel)

2016-07-14

A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we model the dynamical response of devices consisting of a charge sensor coupled to either a single and or a double quantum dot subjected to a pulsed gate voltage. We show that transition rates between charge states in metallic quantum dots are characterized by an asymmetry that can be controlled by the gate voltage. This effect is more pronounced when the switching between charge states corresponds to a Markovian process involving electron transport through a chain of several quantum dots. By simulating the dynamics of electron transport we demonstrate that the quantum box operates as a finite-state machine that can be addressed by choosing suitable shapes and switching rates of the gate pulses. We further show that writing times in the ns range and retention memory times six orders of magnitude longer, in the ms range, can be achieved on the double quantum dot system using experimentally feasible parameters, thereby demonstrating that the device can operate as a dynamic single electron memory.

Multi-Color Single Particle Tracking with Quantum Dots

DEFF Research Database (Denmark)

Christensen, Eva Arnspang; Brewer, J. R.; Lagerholm, B. C.

2012-01-01

. multiplex single molecule sensitivity applications such as single particle tracking (SPT). In order to fully optimize single molecule multiplex application with QDs, we have in this work performed a comprehensive quantitative investigation of the fluorescence intensities, fluorescence intensity fluctuations......Quantum dots (QDs) have long promised to revolutionize fluorescence detection to include even applications requiring simultaneous multi-species detection at single molecule sensitivity. Despite the early promise, the unique optical properties of QDs have not yet been fully exploited in e. g...... further show that there is only a small size advantage in using blue-shifted QDs in biological applications because of the additional size of the water-stabilizing surface coat. Extending previous work, we finally also show that parallel four color multicolor (MC)-SPT with QDs is possible at an image...

Free-running InGaAs single photon detector with 1 dark count per second at 10% efficiency

Science.gov (United States)

Korzh, B.; Walenta, N.; Lunghi, T.; Gisin, N.; Zbinden, H.

2014-02-01

We present a free-running single photon detector for telecom wavelengths based on a negative feedback avalanche photodiode (NFAD). A dark count rate as low as 1 cps was obtained at a detection efficiency of 10%, with an afterpulse probability of 2.2% for 20 μs of deadtime. This was achieved by using an active hold-off circuit and cooling the NFAD with a free-piston stirling cooler down to temperatures of -110 °C. We integrated two detectors into a practical, 625 MHz clocked quantum key distribution system. Stable, real-time key distribution in the presence of 30 dB channel loss was possible, yielding a secret key rate of 350 bps.

Ultrasensitive solution-cast quantum dot photodetectors

International Nuclear Information System (INIS)

Konstantatos, G.; Howard, I.; Fischer, A.; Hoogland, S.; Clifford, J.; Klem, E.; Levina, L.; Sargent, E.H.

2007-01-01

Solution-processed electronic and optoelectronic devices offer low cost, large device area, physical flexibility and convenient materials integration compared to conventional epitaxially grown, lattice-matched, crystalline semiconductor devices. Although the electronic or optoelectronic performance of these solution-processed devices is typically inferior to that of those fabricated by conventional routes, this can be tolerated for some applications in view of the other benefits. Here we report the fabrication of solution-processed infrared photodetectors that are superior in their normalized detectivity (D * , the figure of merit for detector sensitivity) to the best epitaxially grown devices operating at room temperature. We produced the devices in a single solution-processing step, overcoating a prefabricated planar electrode array with an unpatterned layer of Pbs colloidal quantum dot nanocrystals. The devices showed large photoconductive gains with responsivities greater than 10 3 AW -1 . The best devices exhibited a normalized detectivity D * of 1.8 x 10 13 jones (1 jones= 1 cm Hz 1/2 W -1 ) at 1.3μm at room temperature: today's highest performance infrared photodetectors are photovoltaic devices made from epitaxially grown InGaAs that exhibit peak D * in the 10 12 ) jones range at room temperature, whereas the previous record for D * from a photoconductive detector lies at 10 11 jones. The tailored selection of absorption onset energy through the quantum size effect, combined with deliberate engineering of the sequence of nanoparticle fusing and surface trap functionalization, underlie the superior performance achieved in this readily fabricated family of devices. (author)

Quantum phase transitions in spin-1 X X Z chains with rhombic single-ion anisotropy

Science.gov (United States)

Ren, Jie; Wang, Yimin; You, Wen-Long

2018-04-01

We explore numerically the inverse participation ratios in the ground state of one-dimensional spin-1 X X Z chains with the rhombic single-ion anisotropy. By employing the techniques of density-matrix renormalization group, effects of the rhombic single-ion anisotropy on various information theoretical measures are investigated, such as the fidelity susceptibility, the quantum coherence, and the entanglement entropy. Their relations with the quantum phase transitions are also analyzed. The phase transitions from the Y -Néel phase to the large-Ex or the Haldane phase can be well characterized by the fidelity susceptibility. The second-order derivative of the ground-state energy indicates all the transitions are of second order. We also find that the quantum coherence, the entanglement entropy, the Schmidt gap, and the inverse participation ratios can be used to detect the critical points of quantum phase transitions. Results drawn from these quantum information observables agree well with each other. Finally we provide a ground-state phase diagram as functions of the exchange anisotropy Δ and the rhombic single-ion anisotropy E .

Spin Quantum Tunneling via Entangled States in a Dimer of Exchange-Coupled Single-Molecule Magnets

Science.gov (United States)

Tiron, R.; Wernsdorfer, W.; Foguet-Albiol, D.; Aliaga-Alcalde, N.; Christou, G.

2003-11-01

A new family of supramolecular, antiferromagnetically exchange-coupled dimers of single-molecule magnets (SMMs) has recently been reported. Each SMM acts as a bias on its neighbor, shifting the quantum tunneling resonances of the individual SMMs. Hysteresis loop measurements on a single crystal of SMM dimers have now established quantum tunneling of the magnetization via entangled states of the dimer. This shows that the dimer really does behave as a quantum mechanically coupled dimer, and also allows the measurement of the longitudinal and transverse superexchange coupling constants.

Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

DEFF Research Database (Denmark)

Borri, Paola; Langbein, Wolfgang Werner; Hvam, Jørn Märcher

2000-01-01

recovery of the spectral hole within ~100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices. The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH......The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast...

Quantum Stirling heat engine and refrigerator with single and coupled spin systems

Science.gov (United States)

Huang, Xiao-Li; Niu, Xin-Ya; Xiu, Xiao-Ming; Yi, Xue-Xi

2014-02-01

We study the reversible quantum Stirling cycle with a single spin or two coupled spins as the working substance. With the single spin as the working substance, we find that under certain conditions the reversed cycle of a heat engine is NOT a refrigerator, this feature holds true for a Stirling heat engine with an ion trapped in a shallow potential as its working substance. The efficiency of quantum Stirling heat engine can be higher than the efficiency of the Carnot engine, but the performance coefficient of the quantum Stirling refrigerator is always lower than its classical counterpart. With two coupled spins as the working substance, we find that a heat engine can turn to a refrigerator due to the increasing of the coupling constant, this can be explained by the properties of the isothermal line in the magnetic field-entropy plane.

Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

Science.gov (United States)

Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

2013-06-21

We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

Two-color single-photon emission from InAs quantum dots: toward logic information management using quantum light.

Science.gov (United States)

Rivas, David; Muñoz-Matutano, Guillermo; Canet-Ferrer, Josep; García-Calzada, Raúl; Trevisi, Giovanna; Seravalli, Luca; Frigeri, Paola; Martínez-Pastor, Juan P

2014-02-12

In this work, we propose the use of the Hanbury-Brown and Twiss interferometric technique and a switchable two-color excitation method for evaluating the exciton and noncorrelated electron-hole dynamics associated with single photon emission from indium arsenide (InAs) self-assembled quantum dots (QDs). Using a microstate master equation model we demonstrate that our single QDs are described by nonlinear exciton dynamics. The simultaneous detection of two-color, single photon emission from InAs QDs using these nonlinear dynamics was used to design a NOT AND logic transference function. This computational functionality combines the advantages of working with light/photons as input/output device parameters (all-optical system) and that of a nanodevice (QD size of ∼ 20 nm) while also providing high optical sensitivity (ultralow optical power operational requirements). These system features represent an important and interesting step toward the development of new prototypes for the incoming quantum information technologies.

Studies of quantum levels in GaInNAs single quantum wells

International Nuclear Information System (INIS)

Shirakata, Sho; Kondow, Masahiko; Kitatani, Takeshi

2006-01-01

Spectroscopic studies have been carried out on the quantum levels in GaInNAs/GaAs single quantum wells (SQWs). Photoluminescence (PL), PL excitation (PLE), photoreflectance (PR), and high-density-excited PL (HDE-PL) were measured on high quality GaInNAs SQWs, Ga 0.65 In 0.35 N 0.01 As 0.99 /GaAs (well thickness: l z =10 nm) and Ga 0.65 In 0.35 N 0.005 As 0.995 /GaAs (l z =3∝10 nm), grown by molecular-beam epitaxy. For Ga 0.65 In 0.35 N 0.01 As 0.99 /GaAs (l z =10 nm), PL at 8 K exhibited a peak at 1.07 eV due to the exciton-related transition between quantum levels of ground states (e1-hh1). Both PR and PLE exhibited three transitions (1.17, 1.20 and 1.32 eV), and the former two transitions were assigned to as either of e1-lh1 and e2-hh2 transitions, while the transition at 1.32 eV was assigned to as the e2-lh2 transition. For HDE-PL, a new PL peak was observed at about 1.2 eV, and it was assigned to the unresolved e1-lh1 and e2-hh2 transitions. Similar optical measurements have been done on the Ga 0.65 In 0.35 N 0.005 As 0.995 /GaAs with various l z (3∝10 nm). Dependence of optical spectra and energies of quantum levels on l z have been studied. It has been found that HDE-PL in combination with PLE is a good tool for the study of the quantum level of GaInNAs SQW. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Fully quantum-mechanical dynamic analysis of single-photon transport in a single-mode waveguide coupled to a traveling-wave resonator

International Nuclear Information System (INIS)

Hach, Edwin E. III; Elshaari, Ali W.; Preble, Stefan F.

2010-01-01

We analyze the dynamics of single-photon transport in a single-mode waveguide coupled to a micro-optical resonator by using a fully quantum-mechanical model. We examine the propagation of a single-photon Gaussian packet through the system under various coupling conditions. We review the theory of single-photon transport phenomena as applied to the system and we develop a discussion on the numerical technique we used to solve for dynamical behavior of the quantized field. To demonstrate our method and to establish robust single-photon results, we study the process of adiabatically lowering or raising the energy of a single photon trapped in an optical resonator under active tuning of the resonator. We show that our fully quantum-mechanical approach reproduces the semiclassical result in the appropriate limit and that the adiabatic invariant has the same form in each case. Finally, we explore the trapping of a single photon in a system of dynamically tuned, coupled optical cavities.

Sequential Quantum Secret Sharing Using a Single Qudit

Science.gov (United States)

Bai, Chen-Ming; Li, Zhi-Hui; Li, Yong-Ming

2018-05-01

In this paper we propose a novel and efficient quantum secret sharing protocol using d-level single particle, which it can realize a general access structure via the thought of concatenation. In addition, Our scheme includes all advantages of Tavakoli’s scheme [Phys. Rev. A 92 (2015) 030302(R)]. In contrast to Tavakoli’s scheme, the efficiency of our scheme is 1 for the same situation, and the access structure is more general and has advantages in practical significance. Furthermore, we also analyze the security of our scheme in the primary quantum attacks. Sponsored by the National Natural Science Foundation of China under Grant Nos. 61373150 and 61602291, and Industrial Research and Development Project of Science and Technology of Shaanxi Province under Grant No. 2013k0611

Solid-state cavity quantum electrodynamics using quantum dots

International Nuclear Information System (INIS)

Gerard, J.M.; Gayral, B.; Moreau, E.; Robert, I.; Abram, I.

2001-01-01

We review the recent development of solid-state cavity quantum electrodynamics using single self-assembled InAs quantum dots and three-dimensional semiconductor microcavities. We discuss first prospects for observing a strong coupling regime for single quantum dots. We then demonstrate that the strong Purcell effect observed for single quantum dots in the weak coupling regime allows us to prepare emitted photons in a given state (the same spatial mode, the same polarization). We present finally the first single-mode solid-state source of single photons, based on an isolated quantum dot in a pillar microcavity. This optoelectronic device, the first ever to rely on a cavity quantum electrodynamics effect, exploits both Coulomb interaction between trapped carriers in a single quantum dot and single mode photon tunneling in the microcavity. (author)

Superconducting Qubit with Integrated Single Flux Quantum Controller Part II: Experimental Characterization

Science.gov (United States)

Leonard, Edward, Jr.; Beck, Matthew; Thorbeck, Ted; Zhu, Shaojiang; Howington, Caleb; Nelson, Jj; Plourde, Britton; McDermott, Robert

We describe the characterization of a single flux quantum (SFQ) pulse generator cofabricated with a superconducting quantum circuit on a single chip. Resonant trains of SFQ pulses are used to induce coherent qubit rotations on the Bloch sphere. We describe the SFQ drive characteristics of the qubit at the fundamental transition frequency and at subharmonics (ω01 / n , n = 2 , 3 , 4 , ⋯). We address the issue of quasiparticle poisoning due to the proximal SFQ pulse generator, and we characterize the fidelity of SFQ-based rotations using randomized benchmarking. Present address: IBM T.J. Watson Research Center.

Multiparameter estimation with single photons—linearly-optically generated quantum entanglement beats the shotnoise limit

Science.gov (United States)

You, Chenglong; Adhikari, Sushovit; Chi, Yuxi; LaBorde, Margarite L.; Matyas, Corey T.; Zhang, Chenyu; Su, Zuen; Byrnes, Tim; Lu, Chaoyang; Dowling, Jonathan P.; Olson, Jonathan P.

2017-12-01

It was suggested in (Motes et al 2015 Phys. Rev. Lett. 114 170802) that optical networks with relatively inexpensive overheads—single photon Fock states, passive optical elements, and single photon detection—can show significant improvements over classical strategies for single-parameter estimation, when the number of modes in the network is small (ncompute the quantum Cramér-Rao bound to show these networks can have a constant-factor quantum advantage in multi-parameter estimation for even large number of modes. Additionally, we provide a simplified measurement scheme using only single-photon (on-off) detectors that is capable of approximately obtaining this sensitivity for a small number of modes.

Probing quantum coherence in single-atom electron spin resonance

Science.gov (United States)

Willke, Philip; Paul, William; Natterer, Fabian D.; Yang, Kai; Bae, Yujeong; Choi, Taeyoung; Fernández-Rossier, Joaquin; Heinrich, Andreas J.; Lutz, Christoper P.

2018-01-01

Spin resonance of individual spin centers allows applications ranging from quantum information technology to atomic-scale magnetometry. To protect the quantum properties of a spin, control over its local environment, including energy relaxation and decoherence processes, is crucial. However, in most existing architectures, the environment remains fixed by the crystal structure and electrical contacts. Recently, spin-polarized scanning tunneling microscopy (STM), in combination with electron spin resonance (ESR), allowed the study of single adatoms and inter-atomic coupling with an unprecedented combination of spatial and energy resolution. We elucidate and control the interplay of an Fe single spin with its atomic-scale environment by precisely tuning the phase coherence time T2 using the STM tip as a variable electrode. We find that the decoherence rate is the sum of two main contributions. The first scales linearly with tunnel current and shows that, on average, every tunneling electron causes one dephasing event. The second, effective even without current, arises from thermally activated spin-flip processes of tip spins. Understanding these interactions allows us to maximize T2 and improve the energy resolution. It also allows us to maximize the amplitude of the ESR signal, which supports measurements even at elevated temperatures as high as 4 K. Thus, ESR-STM allows control of quantum coherence in individual, electrically accessible spins. PMID:29464211

Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness

Science.gov (United States)

Kajikawa, Y.; Nishigaichi, M.; Tenma, S.; Kato, K.; Katsube, S.

2018-04-01

InGaAs layers were grown by molecular-beam epitaxy on nominal and vicinal Ge(111) substrates with inserting GaSb buffer layers. High-resolution X-ray diffraction using symmetric 333 and asymmetric 224 reflections was employed to analyze the crystallographic properties of the grown layers. By using the two reflections, we determined the lattice constants (the unit cell length a and the angle α between axes) of the grown layers with taking into account the rhombohedral distortion of the lattices of the grown layers. This allowed us the independent determination of the strain components (perpendicular and parallel components to the substrate surface, ε⊥ and ε//) and the composition x of the InxGa1-xAs layers by assuming the distortion coefficient D, which is defined as the ratio of ε⊥ against ε//. Furthermore, the twin ratios were determined for the GaSb and the InGaAs layers by comparing asymmetric 224 reflections from the twin domain with that from the normal domain of the layers. As a result, it has been shown that the twin ratio in the InGaAs layer can be decreased to be less than 0.1% by the use of the vicinal substrate together with annealing the GaSb buffer layer during the growth interruption before the InGaAs overgrowth.

Bunch by bunch beam monitoring in 3rd and 4th generation light sources by means of single crystal diamond detectors and quantum well devices

Science.gov (United States)

Antonelli, M.; Di Fraia, M.; Tallaire, A.; Achard, J.; Carrato, S.; Menk, R. H.; Cautero, G.; Giuressi, D.; Jark, W. H.; Biasiol, G.; Ganbold, T.; Oliver, K.; Callegari, C.; Coreno, M.; De Sio, A.; Pace, E.

2012-10-01

New generation Synchrotron Radiation (SR) sources and Free Electron Lasers (FEL) require novel concepts of beam diagnostics to keep photon beams under surveillance, asking for simultaneous position and intensity monitoring. To deal with high power load and short time pulses provided by these sources, novel materials and methods are needed for the next generation BPMs. Diamond is a promising material for the production of semitransparent in situ X-ray BPMs withstanding the high dose rates of SR rings and high energy FELs. We report on the development of freestanding, single crystal CVD diamond detectors. Performances in both low and radio frequency SR beam monitoring are presented. For the former, sensitivity deviation was found to be approximately 2%; a 0.05% relative precision in the intensity measurements and a 0.1-μm precision in the position encoding have been estimated. For the latter, single-shot characterizations revealed sub-nanosecond rise-times and spatial precisions below 6 μm, which allowed bunch-by-bunch monitoring in multi-bunch operation. Preliminary measurements at the Fermi FEL have been performed with this detector, extracting quantitative intensity and position information for FEL pulses (~ 100 fs, energy 12 ÷ 60 eV), with a long-term spatial precision of about 85 μm results on FEL radiation damages are also reported. Due to their direct, low-energy band gap, InGaAs quantum well devices too may be used as fast detectors for photons ranging from visible to X-ray. Results are reported which show the capability of a novel InGaAs/InAlAs device to detect intensity and position of 100-fs-wide laser pulses.

Optical levitation of a microdroplet containing a single quantum dot

Science.gov (United States)

Minowa, Yosuke; Kawai, Ryoichi; Ashida, Masaaki

2015-03-01

We demonstrate the optical levitation or trapping in helium gas of a single quantum dot (QD) within a liquid droplet. Bright single photon emission from the levitated QD in the droplet was observed for more than 200 s. The observed photon count rates are consistent with the value theoretically estimated from the two-photon-action cross section. This paper presents the realization of an optically levitated solid-state quantum emitter. This paper was published in Optics Letters and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: https://www.opticsinfobase.org/ol/abstract.cfm?uri=ol-40-6-906. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.

High performance mode locking characteristics of single section quantum dash lasers.

Science.gov (United States)

Rosales, Ricardo; Murdoch, S G; Watts, R T; Merghem, K; Martinez, Anthony; Lelarge, Francois; Accard, Alain; Barry, L P; Ramdane, Abderrahim

2012-04-09

Mode locking features of single section quantum dash based lasers are investigated. Particular interest is given to the static spectral phase profile determining the shape of the mode locked pulses. The phase profile dependence on cavity length and injection current is experimentally evaluated, demonstrating the possibility of efficiently using the wide spectral bandwidth exhibited by these quantum dash structures for the generation of high peak power sub-picosecond pulses with low radio frequency linewidths.

Double-slit experiment with single wave-driven particles and its relation to quantum mechanics

DEFF Research Database (Denmark)

Andersen, Anders Peter; Madsen, Jacob; Reichelt, Christian Günther

2015-01-01

even though it is possible to determine unambiguously which slit the walking droplet passes. Here we argue, however, that the single-particle statistics in such an experiment will be fundamentally different from the single-particle statistics of quantum mechanics. Quantum mechanical interference takes...... place between different classical paths with precise amplitude and phase relations. In the double-slit experiment with walking droplets, these relations are lost since one of the paths is singled out by the droplet. To support our conclusions, we have carried out our own double-slit experiment, and our...... results, in particular the long and variable slit passage times of the droplets, cast strong doubt on the feasibility of the interference claimed by Couder and Fort. To understand theoretically the limitations of wave-driven particle systems as analogs to quantum mechanics, we introduce a Schro...

Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K

International Nuclear Information System (INIS)

Kalden, J; Sebald, K; Gutowski, J; Tessarek, C; Figge, S; Kruse, C; Hommel, D

2010-01-01

We present electrically driven luminescence from single InGaN quantum dots embedded into a light emitting diode structure grown by metal-organic vapor-phase epitaxy. Single sharp emission lines in the green spectral region can be identified. Temperature dependent measurements demonstrate thermal stability of the emission of a single quantum dot up to 150 K. These results are an important step towards applications like electrically driven single-photon emitters, which are a basis for applications incorporating plastic optical fibers as well as for modern concepts of free space quantum cryptography.

InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands.

Science.gov (United States)

Han, Yu; Li, Qiang; Ng, Kar Wei; Zhu, Si; Lau, Kei May

2018-06-01

We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal-organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III-V nano-light emitters on mainstream (001) Si substrates.

Free-running InGaAs single photon detector with 1 dark count per second at 10% efficiency

Energy Technology Data Exchange (ETDEWEB)

Korzh, B., E-mail: Boris.Korzh@unige.ch; Walenta, N.; Lunghi, T.; Gisin, N.; Zbinden, H. [Group of Applied Physics, University of Geneva, Chemin de Pinchat 22, CH-1211 Geneva 4 (Switzerland)

2014-02-24

We present a free-running single photon detector for telecom wavelengths based on a negative feedback avalanche photodiode (NFAD). A dark count rate as low as 1 cps was obtained at a detection efficiency of 10%, with an afterpulse probability of 2.2% for 20 μs of deadtime. This was achieved by using an active hold-off circuit and cooling the NFAD with a free-piston stirling cooler down to temperatures of −110 °C. We integrated two detectors into a practical, 625 MHz clocked quantum key distribution system. Stable, real-time key distribution in the presence of 30 dB channel loss was possible, yielding a secret key rate of 350 bps.

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

Energy Technology Data Exchange (ETDEWEB)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

2017-07-01

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

A feasible quantum optical experiment capable of refuting noncontextuality for single photons

International Nuclear Information System (INIS)

Cereceda, Jose L

2002-01-01

Elaborating on a previous work by Simon et al (2000 Phys. Rev. Lett. 85 1783) we propose a realizable quantum optical single-photon experiment using standard present day technology, capable of discriminating maximally between the predictions of quantum mechanics (QM) and noncontextual hidden variable theories (NCHV). Quantum mechanics predicts a gross violation (up to a factor of 2) of the noncontextual Bell-like inequality associated with the proposed experiment. An actual maximal violation of this inequality would demonstrate (modulo fair sampling) an all-or-nothing type contradiction between QM and NCHV

No-go theorem for passive single-rail linear optical quantum computing.

Science.gov (United States)

Wu, Lian-Ao; Walther, Philip; Lidar, Daniel A

2013-01-01

Photonic quantum systems are among the most promising architectures for quantum computers. It is well known that for dual-rail photons effective non-linearities and near-deterministic non-trivial two-qubit gates can be achieved via the measurement process and by introducing ancillary photons. While in principle this opens a legitimate path to scalable linear optical quantum computing, the technical requirements are still very challenging and thus other optical encodings are being actively investigated. One of the alternatives is to use single-rail encoded photons, where entangled states can be deterministically generated. Here we prove that even for such systems universal optical quantum computing using only passive optical elements such as beam splitters and phase shifters is not possible. This no-go theorem proves that photon bunching cannot be passively suppressed even when extra ancilla modes and arbitrary number of photons are used. Our result provides useful guidance for the design of optical quantum computers.

Large-format InGaAs focal plane arrays for SWIR imaging

Science.gov (United States)

Hood, Andrew D.; MacDougal, Michael H.; Manzo, Juan; Follman, David; Geske, Jonathan C.

2012-06-01

FLIR Electro Optical Components will present our latest developments in large InGaAs focal plane arrays, which are used for low light level imaging in the short wavelength infrared (SWIR) regime. FLIR will present imaging from their latest small pitch (15 μm) focal plane arrays in VGA and High Definition (HD) formats. FLIR will present characterization of the FPA including dark current measurements as well as the use of correlated double sampling to reduce read noise. FLIR will show imagery as well as FPA-level characterization data.

Complete Quantum Control of a Single Silicon-Vacancy Center in a Diamond Nanopillar

Science.gov (United States)

Zhang, Jingyuan Linda; Lagoudakis, Konstantinos G.; Tzeng, Yan-Kai; Dory, Constantin; Radulaski, Marina; Kelaita, Yousif; Shen, Zhi-Xun; Melosh, Nicholas A.; Chu, Steven; Vuckovic, Jelena

Coherent quantum control of a quantum bit (qubit) is an important step towards its use in a quantum network. SiV- center in diamond offers excellent physical qualities such as low inhomogeneous broadening, fast photon emission, and a large Debye-Waller factor, while the fast spin manipulation and techniques to extend the spin coherence time are under active investigation. Here, we demonstrate full coherent control over the state of a single SiV- center in a diamond nanopillar using ultrafast optical pulses. The high quality of the chemical vapor deposition grown SiV- centers allows us to coherently manipulate and quasi-resonantly read out the state of the single SiV- center. Moreover, the SiV- centers being coherently controlled are integrated into diamond nanopillar arrays in a site-controlled, individually addressable manner with high yield, low strain, and high spectral stability, which paves the way for scalable on chip optically accessible quantum system in a quantum photonic network. Financial support is provided by the DOE Office of Basic Energy Sciences, Division of Materials Sciences through Stanford Institute for Materials and Energy Sciences (SIMES) under contract DE-AC02-76SF00515.

Statistical analysis of error rate of large-scale single flux quantum logic circuit by considering fluctuation of timing parameters

International Nuclear Information System (INIS)

Yamanashi, Yuki; Masubuchi, Kota; Yoshikawa, Nobuyuki

2016-01-01

The relationship between the timing margin and the error rate of the large-scale single flux quantum logic circuits is quantitatively investigated to establish a timing design guideline. We observed that the fluctuation in the set-up/hold time of single flux quantum logic gates caused by thermal noises is the most probable origin of the logical error of the large-scale single flux quantum circuit. The appropriate timing margin for stable operation of the large-scale logic circuit is discussed by taking the fluctuation of setup/hold time and the timing jitter in the single flux quantum circuits. As a case study, the dependence of the error rate of the 1-million-bit single flux quantum shift register on the timing margin is statistically analyzed. The result indicates that adjustment of timing margin and the bias voltage is important for stable operation of a large-scale SFQ logic circuit.

Statistical analysis of error rate of large-scale single flux quantum logic circuit by considering fluctuation of timing parameters

Energy Technology Data Exchange (ETDEWEB)

Yamanashi, Yuki, E-mail: yamanasi@ynu.ac.jp [Department of Electrical and Computer Engineering, Yokohama National University, Tokiwadai 79-5, Hodogaya-ku, Yokohama 240-8501 (Japan); Masubuchi, Kota; Yoshikawa, Nobuyuki [Department of Electrical and Computer Engineering, Yokohama National University, Tokiwadai 79-5, Hodogaya-ku, Yokohama 240-8501 (Japan)

2016-11-15

The relationship between the timing margin and the error rate of the large-scale single flux quantum logic circuits is quantitatively investigated to establish a timing design guideline. We observed that the fluctuation in the set-up/hold time of single flux quantum logic gates caused by thermal noises is the most probable origin of the logical error of the large-scale single flux quantum circuit. The appropriate timing margin for stable operation of the large-scale logic circuit is discussed by taking the fluctuation of setup/hold time and the timing jitter in the single flux quantum circuits. As a case study, the dependence of the error rate of the 1-million-bit single flux quantum shift register on the timing margin is statistically analyzed. The result indicates that adjustment of timing margin and the bias voltage is important for stable operation of a large-scale SFQ logic circuit.

Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

DEFF Research Database (Denmark)

Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

2002-01-01

The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly...... by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states....

Threshold quantum secret sharing based on single qubit

Science.gov (United States)

Lu, Changbin; Miao, Fuyou; Meng, Keju; Yu, Yue

2018-03-01

Based on unitary phase shift operation on single qubit in association with Shamir's ( t, n) secret sharing, a ( t, n) threshold quantum secret sharing scheme (or ( t, n)-QSS) is proposed to share both classical information and quantum states. The scheme uses decoy photons to prevent eavesdropping and employs the secret in Shamir's scheme as the private value to guarantee the correctness of secret reconstruction. Analyses show it is resistant to typical intercept-and-resend attack, entangle-and-measure attack and participant attacks such as entanglement swapping attack. Moreover, it is easier to realize in physic and more practical in applications when compared with related ones. By the method in our scheme, new ( t, n)-QSS schemes can be easily constructed using other classical ( t, n) secret sharing.

Poly-silicon quantum-dot single-electron transistors

International Nuclear Information System (INIS)

Kang, Kwon-Chil; Lee, Joung-Eob; Lee, Jung-Han; Lee, Jong-Ho; Shin, Hyung-Cheol; Park, Byung-Gook

2012-01-01

For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by using polycrystalline silicon (poly-Si). The self-aligned quantum dot is formed by the selective etching of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon or chemical mechanical polishing (CMP). The two tunneling barriers of the SET are fabricated by thermal oxidation. Also, to decrease the leakage current and control the gate capacitance, we deposit a hard oxide mask layer. The control gate is formed by using an electron beam and photolithography on chemical vapor deposition (CVD). Owing to the small capacitance of the narrow control gate due to the tetraethyl orthosilicate (TEOS) hard mask, we observe clear Coulomb oscillation peaks and differential trans-conductance curves at room temperature. The clear oscillation period of the fabricated SET is 2.0 V.

Single-shot secure quantum network coding on butterfly network with free public communication

Science.gov (United States)

Owari, Masaki; Kato, Go; Hayashi, Masahito

2018-01-01

Quantum network coding on the butterfly network has been studied as a typical example of quantum multiple cast network. We propose a secure quantum network code for the butterfly network with free public classical communication in the multiple unicast setting under restricted eavesdropper’s power. This protocol certainly transmits quantum states when there is no attack. We also show the secrecy with shared randomness as additional resource when the eavesdropper wiretaps one of the channels in the butterfly network and also derives the information sending through public classical communication. Our protocol does not require verification process, which ensures single-shot security.

Quantum thermodynamic cycles and quantum heat engines. II.

Science.gov (United States)

Quan, H T

2009-04-01

We study the quantum-mechanical generalization of force or pressure, and then we extend the classical thermodynamic isobaric process to quantum-mechanical systems. Based on these efforts, we are able to study the quantum version of thermodynamic cycles that consist of quantum isobaric processes, such as the quantum Brayton cycle and quantum Diesel cycle. We also consider the implementation of the quantum Brayton cycle and quantum Diesel cycle with some model systems, such as single particle in a one-dimensional box and single-mode radiation field in a cavity. These studies lay the microscopic (quantum-mechanical) foundation for Szilard-Zurek single-molecule engine.

Heralded linear optical quantum Fredkin gate based on one auxiliary qubit and one single photon detector

International Nuclear Information System (INIS)

Zhu Chang-Hua; Cao Xin; Quan Dong-Xiao; Pei Chang-Xing

2014-01-01

Linear optical quantum Fredkin gate can be applied to quantum computing and quantum multi-user communication networks. In the existing linear optical scheme, two single photon detectors (SPDs) are used to herald the success of the quantum Fredkin gate while they have no photon count. But analysis results show that for non-perfect SPD, the lower the detector efficiency, the higher the heralded success rate by this scheme is. We propose an improved linear optical quantum Fredkin gate by designing a new heralding scheme with an auxiliary qubit and only one SPD, in which the higher the detection efficiency of the heralding detector, the higher the success rate of the gate is. The new heralding scheme can also work efficiently under a non-ideal single photon source. Based on this quantum Fredkin gate, large-scale quantum switching networks can be built. As an example, a quantum Beneš network is shown in which only one SPD is used. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Highly efficient photonic nanowire single-photon sources for quantum information applications

DEFF Research Database (Denmark)

Gregersen, Niels; Claudon, J.; Munsch, M.

2013-01-01

to a collection efficiency of only 1-2 %, and efficient light extraction thus poses a major challenge in SPS engineering. Initial efforts to improve the efficiency have exploited cavity quantum electrodynamics (cQED) to efficiently couple the emitted photons to the optical cavity mode. An alternative approach......Within the emerging field of optical quantum information processing, the current challenge is to construct the basic building blocks for the quantum computing and communication systems. A key component is the singlephoton source (SPS) capable of emitting single photons on demand. Ideally, the SPS...... must feature near-unity efficiency, where the efficiency is defined as the number of detected photons per trigger, the probability g(2)(τ=0) of multi-photon emission events should be 0 and the emitted photons are required to be indistinguishable. An optically or electrically triggered quantum light...

Anisotropic Exciton Rabi Oscillation in Single Telecommunication-Band Quantum Dot

Science.gov (United States)

Toshiyuki Miyazawa,; Toshihiro Nakaoka,; Katsuyuki Watanabe,; Naoto Kumagai,; Naoki Yokoyama,; Yasuhiko Arakawa,

2010-06-01

Anisotropic Rabi oscillation in the exciton state in a single InAs/GaAs quantum dot (QD) was demonstrated in the telecommunication-band by selecting two orthogonal polarization angles of the excitation laser. Our InAs QDs were embedded in an intrinsic layer of an n-i-Schottky diode, which provides an electric field to extract photoexcited carriers from QDs. Owing to the potential anisotropy of QDs, the fine structure splitting (FSS) energy in the exciton state in single InAs QDs was ˜110 μeV, measured by polarization-resolved photocurrent spectroscopy. The ratio between two different Rabi frequencies, which reflect anisotropic dipole moments of two orthogonal exciton states, was estimated to be ˜1.2. This demonstrates that the selective control of two orthogonal polarized exciton states is a promising technique for exciton-based-quantum information devices compatible with fiber optics.

Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.

Science.gov (United States)

Mintairov, S A; Kalyuzhnyy, N A; Lantratov, V M; Maximov, M V; Nadtochiy, A M; Rouvimov, Sergei; Zhukov, A E

2015-09-25

Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively.

A Single Molecule Investigation of the Photostability of Quantum Dots

DEFF Research Database (Denmark)

Christensen, Eva Arnspang; Kulatunga, Pasad; Lagerholm, B. Christoffer

2012-01-01

Quantum dots (QDs) are very attractive probes for multi-color fluorescence applications. We report here however that single QDs that are subject to continuous blue excitation from a 100W mercury arc lamp will undergo a continuous blue-switching of the emission wavelength eventually reaching a per...... is especially detrimental for multi-color single molecule applications, as we regularly observe spectral blue-shifts of 50 nm, or more even after only ten seconds of illumination....

Quantum key distribution with a single photon from a squeezed coherent state

International Nuclear Information System (INIS)

Matsuoka, Masahiro; Hirano, Takuya

2003-01-01

Squeezing of the coherent state by optical parametric amplifier is shown to efficiently produce single-photon states with reduced multiphoton probabilities compared with the weak coherent light. It can be a better source for a longer-distance quantum key distribution and also for other quantum optical experiments. The necessary condition for a secure quantum key distribution given by Brassard et al. is analyzed as functions of the coherent-state amplitude and squeeze parameter. Similarly, the rate of the gained secure bits G after error correction and privacy amplification given by Luetkenhaus is calculated. Compared with the weak coherent light, it is found that G is about ten times larger and its high level continues on about two times longer distance. By improvement of the detector efficiency it is shown that the distance extends further. Measurement of the intensity correlation function and the relation to photon antibunching are discussed for the experimental verification of the single-photon generation

Single-shot quantum nondemolition measurement of a quantum-dot electron spin using cavity exciton-polaritons

Science.gov (United States)

Puri, Shruti; McMahon, Peter L.; Yamamoto, Yoshihisa

2014-10-01

We propose a scheme to perform single-shot quantum nondemolition (QND) readout of the spin of an electron trapped in a semiconductor quantum dot (QD). Our proposal relies on the interaction of the QD electron spin with optically excited, quantum well (QW) microcavity exciton-polaritons. The spin-dependent Coulomb exchange interaction between the QD electron and cavity polaritons causes the phase and intensity response of left circularly polarized light to be different than that of right circularly polarized light, in such a way that the QD electron's spin can be inferred from the response to a linearly polarized probe reflected or transmitted from the cavity. We show that with careful device design it is possible to essentially eliminate spin-flip Raman transitions. Thus a QND measurement of the QD electron spin can be performed within a few tens of nanoseconds with fidelity ˜99.95%. This improves upon current optical QD spin readout techniques across multiple metrics, including speed and scalability.

Thermal vibration of a rectangular single-layered graphene sheet with quantum effects

International Nuclear Information System (INIS)

Wang, Lifeng; Hu, Haiyan

2014-01-01

The thermal vibration of a rectangular single-layered graphene sheet is investigated by using a rectangular nonlocal elastic plate model with quantum effects taken into account when the law of energy equipartition is unreliable. The relation between the temperature and the Root of Mean Squared (RMS) amplitude of vibration at any point of the rectangular single-layered graphene sheet in simply supported case is derived first from the rectangular nonlocal elastic plate model with the strain gradient of the second order taken into consideration so as to characterize the effect of microstructure of the graphene sheet. Then, the RMS amplitude of thermal vibration of a rectangular single-layered graphene sheet simply supported on an elastic foundation is derived. The study shows that the RMS amplitude of the rectangular single-layered graphene sheet predicted from the quantum theory is lower than that predicted from the law of energy equipartition. The maximal relative difference of RMS amplitude of thermal vibration appears at the sheet corners. The microstructure of the graphene sheet has a little effect on the thermal vibrations of lower modes, but exhibits an obvious effect on the thermal vibrations of higher modes. The quantum effect is more important for the thermal vibration of higher modes in the case of smaller sides and lower temperature. The relative difference of maximal RMS amplitude of thermal vibration of a rectangular single-layered graphene sheet decreases monotonically with an increase of temperature. The absolute difference of maximal RMS amplitude of thermal vibration of a rectangular single-layered graphene sheet increases slowly with the rising of Winkler foundation modulus.

Quantum tunneling of magnetization in single molecular magnets coupled to ferromagnetic reservoirs

Science.gov (United States)

Misiorny, M.; Barnas, J.

2007-04-01

The role of spin polarized reservoirs in quantum tunneling of magnetization and relaxation processes in a single molecular magnet (SMM) is investigated theoretically. The SMM is exchange-coupled to the reservoirs and also subjected to a magnetic field varying in time, which enables the quantum tunneling of magnetization. The spin relaxation times are calculated from the Fermi golden rule. The exchange interaction of SMM and electrons in the leads is shown to affect the spin reversal due to quantum tunneling of magnetization. It is shown that the switching is associated with transfer of a certain charge between the leads.

Sub-monolayer dot vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Blokhin, S.A.; Maleev, N.A.; Kuz'menkov, A.G.

2006-01-01

Vertical-cavity surface-emitting lasers (VCSELs) based on submonolayer InGaAs quantum-dot active region and doped with AlGaAs/GaAs distributed Bragg reflectors were grown by molecular beam epitaxy. 3 μm aperture single-mode VCSELs demonstrate lasing at 980 nm with threshold current of 0.6 mA, maximum output power of 4 mW and external differential efficiency as high as 68%. Ultimately low internal optical losses were measured for these multimode sub-monolayer quantum dot VCSELs [ru

Two-photon interference at telecom wavelengths for time-bin-encoded single photons from quantum-dot spin qubits.

Science.gov (United States)

Yu, Leo; Natarajan, Chandra M; Horikiri, Tomoyuki; Langrock, Carsten; Pelc, Jason S; Tanner, Michael G; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Höfling, Sven; Kamp, Martin; Hadfield, Robert H; Fejer, Martin M; Yamamoto, Yoshihisa

2015-11-24

Practical quantum communication between remote quantum memories rely on single photons at telecom wavelengths. Although spin-photon entanglement has been demonstrated in atomic and solid-state qubit systems, the produced single photons at short wavelengths and with polarization encoding are not suitable for long-distance communication, because they suffer from high propagation loss and depolarization in optical fibres. Establishing entanglement between remote quantum nodes would further require the photons generated from separate nodes to be indistinguishable. Here, we report the observation of correlations between a quantum-dot spin and a telecom single photon across a 2-km fibre channel based on time-bin encoding and background-free frequency downconversion. The downconverted photon at telecom wavelengths exhibits two-photon interference with another photon from an independent source, achieving a mean wavepacket overlap of greater than 0.89 despite their original wavelength mismatch (900 and 911 nm). The quantum-networking operations that we demonstrate will enable practical communication between solid-state spin qubits across long distances.

Ultra-Low Power Optical Transistor Using a Single Quantum Dot Embedded in a Photonic Wire

DEFF Research Database (Denmark)

Nguyen, H.A.; Grange, T.; Malik, N.S.

2017-01-01

Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons.......Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons....

Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

Energy Technology Data Exchange (ETDEWEB)

Gauthier, J.-P.; Almosni, S.; Léger, Y.; Perrin, M.; Even, J.; Cornet, C., E-mail: charles.cornet@insa-rennes.fr; Durand, O. [UMR FOTON, CNRS, INSA-Rennes, F-35708 Rennes (France); Robert, C. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Balocchi, A.; Carrère, H.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, F-31077 Toulouse (France)

2014-12-15

We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.

Self-assembly of single "square" quantum rings in gold-free GaAs nanowires.

Science.gov (United States)

Zha, Guowei; Shang, Xiangjun; Su, Dan; Yu, Ying; Wei, Bin; Wang, Li; Li, Mifeng; Wang, Lijuan; Xu, Jianxing; Ni, Haiqiao; Ji, Yuan; Sun, Baoquan; Niu, Zhichuan

2014-03-21

Single nanostructures embedded within nanowires (NWs) represent one of the most promising technologies for applications in quantum photonics. However, fabrication imperfections and etching-induced defects are inevitable for top-down fabrications, whereas self-assembly bottom-up approaches cannot avoid the difficulties of its stochastic nature and are limited to restricted heterogeneous material systems. Here we demonstrate the versatile self-assembly of single "square" quantum rings (QR) on the sidewalls of gold-free GaAs NWs for the first time. By tuning the deposition temperature, As overpressure and amount of gallium-droplets, we were able to control the density and morphology of the structure, yielding novel single quantum dots, QR, coupled QRs, and nano-antidots. A proposed model based on a strain-driven, transport-dependent nucleation of gallium droplets at high temperature accounts for the formation mechanism of these structures. We achieved a single-QR-in-NW structure, of which the optical properties were analyzed using micro-photoluminescence at 10 K and a spatially resolved cathodoluminescence technique at 77 K. The spectra show sharp discrete peaks; of these peaks, the narrowest linewidth (separation) was 578 μeV (1-3 meV), reflecting the quantized nature of the ring-type electronic states.

Simple and efficient absorption filter for single photons from a cold atom quantum memory.

Science.gov (United States)

Stack, Daniel T; Lee, Patricia J; Quraishi, Qudsia

2015-03-09

The ability to filter unwanted light signals is critical to the operation of quantum memories based on neutral atom ensembles. Here we demonstrate an efficient frequency filter which uses a vapor cell filled with (85)Rb and a buffer gas to attenuate both residual laser light and noise photons by nearly two orders of magnitude with little loss to the single photons associated with our cold (87)Rb quantum memory. This simple, passive filter provides an additional 18 dB attenuation of our pump laser and erroneous spontaneous emissions for every 1 dB loss of the single photon signal. We show that the addition of a frequency filter increases the non-classical correlations and the retrieval efficiency of our quantum memory by ≈ 35%.

Rapid single flux quantum logic in high temperature superconductor technology

NARCIS (Netherlands)

Shunmugavel, K.

2006-01-01

A Josephson junction is the basic element of rapid single flux quantum logic (RSFQ) circuits. A high operating speed and low power consumption are the main advantages of RSFQ logic over semiconductor electronic circuits. To realize complex RSFQ circuits in HTS technology one needs a reproducible

Room-temperature near-field reflection spectroscopy of single quantum wells

DEFF Research Database (Denmark)

Langbein, Wolfgang Werner; Hvam, Jørn Marcher; Madsen, Steen

1997-01-01

. This technique suppresses efficiently the otherwise dominating far-field background and reduces topographic artifacts. We demonstrate its performance on a thin, strained near-surface CdS/ZnS single quantum well at room temperature. The optical structure of these topographically flat samples is due to Cd...

Quantum-Sequencing: Fast electronic single DNA molecule sequencing

Science.gov (United States)

Casamada Ribot, Josep; Chatterjee, Anushree; Nagpal, Prashant

2014-03-01

A major goal of third-generation sequencing technologies is to develop a fast, reliable, enzyme-free, high-throughput and cost-effective, single-molecule sequencing method. Here, we present the first demonstration of unique ``electronic fingerprint'' of all nucleotides (A, G, T, C), with single-molecule DNA sequencing, using Quantum-tunneling Sequencing (Q-Seq) at room temperature. We show that the electronic state of the nucleobases shift depending on the pH, with most distinct states identified at acidic pH. We also demonstrate identification of single nucleotide modifications (methylation here). Using these unique electronic fingerprints (or tunneling data), we report a partial sequence of beta lactamase (bla) gene, which encodes resistance to beta-lactam antibiotics, with over 95% success rate. These results highlight the potential of Q-Seq as a robust technique for next-generation sequencing.

Dynamical sensitivity control of a single-spin quantum sensor.

Science.gov (United States)

Lazariev, Andrii; Arroyo-Camejo, Silvia; Rahane, Ganesh; Kavatamane, Vinaya Kumar; Balasubramanian, Gopalakrishnan

2017-07-26

The Nitrogen-Vacancy (NV) defect in diamond is a unique quantum system that offers precision sensing of nanoscale physical quantities at room temperature beyond the current state-of-the-art. The benchmark parameters for nanoscale magnetometry applications are sensitivity, spectral resolution, and dynamic range. Under realistic conditions the NV sensors controlled by conventional sensing schemes suffer from limitations of these parameters. Here we experimentally show a new method called dynamical sensitivity control (DYSCO) that boost the benchmark parameters and thus extends the practical applicability of the NV spin for nanoscale sensing. In contrast to conventional dynamical decoupling schemes, where π pulse trains toggle the spin precession abruptly, the DYSCO method allows for a smooth, analog modulation of the quantum probe's sensitivity. Our method decouples frequency selectivity and spectral resolution unconstrained over the bandwidth (1.85 MHz-392 Hz in our experiments). Using DYSCO we demonstrate high-accuracy NV magnetometry without |2π| ambiguities, an enhancement of the dynamic range by a factor of 4 · 10 3 , and interrogation times exceeding 2 ms in off-the-shelf diamond. In a broader perspective the DYSCO method provides a handle on the inherent dynamics of quantum systems offering decisive advantages for NV centre based applications notably in quantum information and single molecule NMR/MRI.

Cross correlations of quantum key distribution based on single-photon sources

International Nuclear Information System (INIS)

Dong Shuangli; Wang Xiaobo; Zhang Guofeng; Sun Jianhu; Zhang Fang; Xiao Liantuan; Jia Suotang

2009-01-01

We theoretically analyze the second-order correlation function in a quantum key distribution system with real single-photon sources. Based on single-event photon statistics, the influence of the modification caused by an eavesdropper's intervention and the effects of background signals on the cross correlations between authorized partners are presented. On this basis, we have shown a secure range of correlation against the intercept-resend attacks.

Single quantum dot tracking reveals the impact of nanoparticle surface on intracellular state.

Science.gov (United States)

Zahid, Mohammad U; Ma, Liang; Lim, Sung Jun; Smith, Andrew M

2018-05-08

Inefficient delivery of macromolecules and nanoparticles to intracellular targets is a major bottleneck in drug delivery, genetic engineering, and molecular imaging. Here we apply live-cell single-quantum-dot imaging and tracking to analyze and classify nanoparticle states after intracellular delivery. By merging trajectory diffusion parameters with brightness measurements, multidimensional analysis reveals distinct and heterogeneous populations that are indistinguishable using single parameters alone. We derive new quantitative metrics of particle loading, cluster distribution, and vesicular release in single cells, and evaluate intracellular nanoparticles with diverse surfaces following osmotic delivery. Surface properties have a major impact on cell uptake, but little impact on the absolute cytoplasmic numbers. A key outcome is that stable zwitterionic surfaces yield uniform cytosolic behavior, ideal for imaging agents. We anticipate that this combination of quantum dots and single-particle tracking can be widely applied to design and optimize next-generation imaging probes, nanoparticle therapeutics, and biologics.

InGaAs detectors and FPA's for a large span of applications: design and material considerations

Science.gov (United States)

Vermeiren, J. P.; Merken, P.

2017-11-01

Compared with the other Infrared detector materials, such as HgCdTe (or MCT) and lead salts (e.g.: PbS, PbSe, PbSnTe, …), the history of InGaAs FPA's is not that old. Some 25 years ago the first linear detectors were used for space missions [1,2]. During the last 15-20 years InGaAs, grown lattice matched on InP, has become the work horse for the telecommunication industry [3] and later on for passive and active imagery in the SWIR range. For longer wavelengths than 1.7 μm, III-V materials are in strong competition with SWIR MCT and till now the performance of MCT is better than high In-content InGaAs. During the last years some alternatives based on quaternary materials [4] and on Superlattice structures [5] are making gradual progress in such a way that they can yield performing Focal planes in the (near) future. As the SWIR wavelengths range covers a large variety of applications, also the FPA characteristics and mainly the ROIC properties need to be adjusted to fulfil the mission requirements with the requested performance. Additionally one has to bear in mind that the nature of SWIR radiation is completely different from what is usually encountered in IR imaging. Whereas the signal of thermal imagery in the Middle Wavelength (MWIR: [3 - 5 μm]) or Long Wavelength (LWIR: [8 - 10 μm] or [8 - 12 μm]) band is characterized by a large DC pedestal, caused by objects at ambient temperature, and a small AC signal, due to the small temperature or emissivity variations, SWIR range imagery is characterized by a large dynamic range and almost no DC signal. In this sense the SWIR imagery is resembling more the nature of Visible and NIR imaging than that of thermal imagery.

Spin quantum tunneling via entangled states in a dimer of exchange coupled single-molecule magnets

Science.gov (United States)

Tiron, R.; Wernsdorfer, W.; Aliaga-Alcalde, N.; Foguet-Albiol, D.; Christou, G.

2004-03-01

A new family of supramolecular, antiferromagnetically exchange-coupled dimers of single-molecule magnets (SMMs) has recently been reported [W. Wernsdorfer, N. Aliaga-Alcalde, D.N. Hendrickson, and G. Christou, Nature 416, 406 (2002)]. Each SMM acts as a bias on its neighbor, shifting the quantum tunneling resonances of the individual SMMs. Hysteresis loop measurements on a single crystal of SMM-dimers have now established quantum tunneling of the magnetization via entangled states of the dimer. This shows that the dimer really does behave as a quantum-mechanically coupled dimer. The transitions are well separated, suggesting long coherence times compared to the time scale of the energy splitting. This result is of great importance if such systems are to be used for quantum computing. It also allows the measurement of the longitudinal and transverse superexchange coupling constants [Phys. Rev. Lett. 91, 227203 (2003)].

Coherent excitonic nonlinearity versus inhomogeneous broadening in single quantum wells

DEFF Research Database (Denmark)

Langbein, Wolfgang Werner; Borri, Paola; Hvam, Jørn Märcher

1998-01-01

The coherent response of excitons in semiconductor nanostructures, as measured in four wave mixing (FWM) experiments, depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs-AlGaAs single quantum wells (SQW) of 4 nm to 25 nm well width. Two main mechanisms...

Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells

International Nuclear Information System (INIS)

Capotondi, F.; Biasiol, G.; Ercolani, D.; Grillo, V.; Carlino, E.; Romanato, F.; Sorba, L.

2005-01-01

The relationship between structural and low-temperature transport properties is explored for In x Al 1 - x As/In x Ga 1 - x As metamorphic quantum wells with x > 0.7 grown on GaAs by molecular beam epitaxy. Different step-graded buffer layers are used to gradually adapt the in-plane lattice parameter from the GaAs towards the InGaAs value. We show that using buffer layers with a suitable maximum In content the residual compressive strain in the quantum well region can be strongly reduced. Samples with virtually no residual strain in the quantum well region show a low-temperature electron mobility up to 29 m 2 /V s while for samples with higher residual compressive strain the low-temperature mobility is reduced. Furthermore, for samples with buffers inducing a tensile strain in the quantum well region, deep grooves are observed on the surface, and in correspondence we notice a strong deterioration of the low-temperature transport properties

Superconducting single electron transistor for charge sensing in Si/SiGe-based quantum dots

Science.gov (United States)

Yang, Zhen

Si-based quantum devices, including Si/SiGe quantum dots (QD), are promising candidates for spin-based quantum bits (quits), which are a potential platform for quantum information processing. Meanwhile, qubit readout remains a challenging task related to semiconductor-based quantum computation. This thesis describes two readout devices for Si/SiGe QDs and the techniques for developing them from a traditional single electron transistor (SET). By embedding an SET in a tank circuit and operating it in the radio-frequency (RF) regime, a superconducting RF-SET has quick response as well as ultra high charge sensitivity and can be an excellent charge sensor for the QDs. We demonstrate such RF-SETs for QDs in a Si/SiGe heterostructure. Characterization of the SET in magnetic fields is studied for future exploration of advanced techniques such as spin detection and spin state manipulation. By replacing the tank circuit with a high-quality-factor microwave cavity, the embedded SET will be operated in the supercurrent regime as a single Cooper pair transistor (CPT) to further increase the charge sensitivity and reduce any dissipation. The operating principle and implementation of the cavity-embedded CPT (cCPT) will be introduced.

InGaAs focal plane arrays for low-light-level SWIR imaging

Science.gov (United States)

MacDougal, Michael; Hood, Andrew; Geske, Jon; Wang, Jim; Patel, Falgun; Follman, David; Manzo, Juan; Getty, Jonathan

2011-06-01

Aerius Photonics will present their latest developments in large InGaAs focal plane arrays, which are used for low light level imaging in the short wavelength infrared (SWIR) regime. Aerius will present imaging in both 1280x1024 and 640x512 formats. Aerius will present characterization of the FPA including dark current measurements. Aerius will also show the results of development of SWIR FPAs for high temperaures, including imagery and dark current data. Finally, Aerius will show results of using the SWIR camera with Aerius' SWIR illuminators using VCSEL technology.

Quickest single-step one pot mechanosynthesis and characterization of ZnTe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Patra, S. [Dept of Physics, University of Burdwan, Golapbag, Burdwan, West Bengal 713104 (India); Pradhan, S.K., E-mail: skp_bu@yahoo.com [Dept of Physics, University of Burdwan, Golapbag, Burdwan, West Bengal 713104 (India)

2011-05-05

Research highlights: > First time quickest mechanosynthesis of ZnTe QDs starting from Zn and Te powders. > Cubic ZnTe are formed in a single pot at RT in a single step within 1 h of milling. > The existence of stacking faults and twin faults are evident from HRTEM images. > Distinct blue shift has been observed in UV-vis absorption spectra. > First time report that ZnTe QDs with faults can also show the quantum size effect. - Abstract: ZnTe quantum dots (QDs) are synthesized at room temperature in a single step by mechanical alloying the stoichiometric equimolar mixture (1:1 mol) of Zn and Te powders under Ar within 1 h of milling. Both XRD and HRTEM characterizations reveal that these QDs having size {approx}5 nm contain stacking faults of different kinds. A distinct blue-shift in absorption spectra with decreasing particle size of QDs confirms the quantum size confinement effect (QSCE). It is observed for first time that the QDs with considerable amount of faults can also show the QSCE. Optical band gaps of these QDs increase with increasing milling time and their band gaps can be fine-tuned easily by varying milling time of QDs.

Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range

Energy Technology Data Exchange (ETDEWEB)

Gladyshev, A. G., E-mail: andrey.gladyshev@connector-optics.com; Novikov, I. I.; Karachinsky, L. Ya.; Denisov, D. V. [Connector Optics OOO (Russian Federation); Blokhin, S. A.; Blokhin, A. A.; Nadtochiy, A. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Kurochkin, A. S. [St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (Russian Federation); Egorov, A. Yu. [Connector Optics OOO (Russian Federation)

2016-09-15

The optical properties of elastically strained semiconductor heterostructures with InGaAs/InGaAlAs quantum wells (QWs), intended for use in the formation of the active region of lasers emitting in the spectral range 1520–1580 nm, are studied. Active regions with varied lattice mismatch between the InGaAs QWs and the InP substrate are fabricated by molecular beam epitaxy. The maximum lattice mismatch for the InGaAs QWs is +2%. The optical properties of the elastically strained InGaAlAs/InGaAs/InP heterostructures are studied by the photoluminescence method in the temperature range from 20 to 140°C at various power densities of the excitation laser. Investigation of the optical properties of InGaAlAs/InGaAs/InP experimental samples confirms the feasibility of using the developed elastically strained heterostructures for the fabrication of active regions for laser diodes with high temperature stability.

Copenhagen's single system premise prevents a unified view of integer and fractional quantum hall effect

Science.gov (United States)

Post, Evert Jan

1999-05-01

This essay presents conclusive evidence of the impermissibility of Copenhagen's single system interpretation of the Schroedinger process. The latter needs to be viewed as a tool exclusively describing phase and orientation randomized ensembles and is not be used for isolated single systems. Asymptotic closeness of single system and ensemble behavior and the rare nature of true single system manifestations have prevented a definitive identification of this Copenhagen deficiency over the past three quarter century. Quantum uncertainty so becomes a basic trade mark of phase and orientation disordered ensembles. The ensuing void of usable single system tools opens a new inquiry for tools without statistical connotations. Three, in part already known, period integrals here identified as flux, charge and action counters emerge as diffeo-4 invariant tools fully compatible with the demands of the general theory of relativity. The discovery of the quantum Hall effect has been instrumental in forcing a distinction between ensemble disorder as in the normal Hall effect versus ensemble order in the plateau states. Since the order of the latter permits a view of the plateau states as a macro- or meso-scopic single system, the period integral description applies, yielding a straightforward unified description of integer and fractional quantum Hall effects.

Detection of single quantum dots in model organisms with sheet illumination microscopy

Energy Technology Data Exchange (ETDEWEB)

Friedrich, Mike; Nozadze, Revaz; Gan, Qiang; Zelman-Femiak, Monika; Ermolayev, Vladimir [Molecular Microscopy Group, Rudolf Virchow Center, University of Wuerzburg, Versbacher Str. 9, D-97078 Wuerzburg (Germany); Wagner, Toni U. [Institute of Physiological Chemistry I, Biocenter, University of Wuerzburg, Am Hubland, D-97074 Wuerzburg (Germany); Harms, Gregory S., E-mail: gregory.harms@virchow.uni-wuerzburg.de [Molecular Microscopy Group, Rudolf Virchow Center, University of Wuerzburg, Versbacher Str. 9, D-97078 Wuerzburg (Germany)

2009-12-18

Single-molecule detection and tracking is important for observing biomolecule interactions in the microenvironment. Here we report selective plane illumination microscopy (SPIM) with single-molecule detection in living organisms, which enables fast imaging and single-molecule tracking and optical penetration beyond 300 {mu}m. We detected single nanocrystals in Drosophila larvae and zebrafish embryo. We also report our first tracking of single quantum dots during zebrafish development, which displays a transition from flow to confined motion prior to the blastula stage. The new SPIM setup represents a new technique, which enables fast single-molecule imaging and tracking in living systems.

Detection of single quantum dots in model organisms with sheet illumination microscopy

International Nuclear Information System (INIS)

Friedrich, Mike; Nozadze, Revaz; Gan, Qiang; Zelman-Femiak, Monika; Ermolayev, Vladimir; Wagner, Toni U.; Harms, Gregory S.

2009-01-01

Single-molecule detection and tracking is important for observing biomolecule interactions in the microenvironment. Here we report selective plane illumination microscopy (SPIM) with single-molecule detection in living organisms, which enables fast imaging and single-molecule tracking and optical penetration beyond 300 μm. We detected single nanocrystals in Drosophila larvae and zebrafish embryo. We also report our first tracking of single quantum dots during zebrafish development, which displays a transition from flow to confined motion prior to the blastula stage. The new SPIM setup represents a new technique, which enables fast single-molecule imaging and tracking in living systems.

Superconducting Qubit with Integrated Single Flux Quantum Controller Part I: Theory and Fabrication

Science.gov (United States)

Beck, Matthew; Leonard, Edward, Jr.; Thorbeck, Ted; Zhu, Shaojiang; Howington, Caleb; Nelson, Jj; Plourde, Britton; McDermott, Robert

As the size of quantum processors grow, so do the classical control requirements. The single flux quantum (SFQ) Josephson digital logic family offers an attractive route to proximal classical control of multi-qubit processors. Here we describe coherent control of qubits via trains of SFQ pulses. We discuss the fabrication of an SFQ-based pulse generator and a superconducting transmon qubit on a single chip. Sources of excess microwave loss stemming from the complex multilayer fabrication of the SFQ circuit are discussed. We show how to mitigate this loss through judicious choice of process workflow and appropriate use of sacrificial protection layers. Present address: IBM T.J. Watson Research Center.

Hole-Initiated-Avalanche, Linear-Mode, Single-Photon-Sensitive Avalanche Photodetector with Reduced Excess Noise and Low Dark Count Rate, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — A radiation hard, single photon sensitive InGaAs avalanche photodiode (APD) receiver technology will be demonstrated useful for long range space based optical...

Electric field induced removal of the biexciton binding energy in a single quantum dot

NARCIS (Netherlands)

Reimer, M.E.; Kouwen, Van M.P.; Hidma, A.W.; Weert, van M.H.M.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.

2011-01-01

We control the electrostatic environment of a single InAsP quantum dot in an InP nanowire with two contacts and two lateral gates positioned to an individual nanowire. We empty the quantum dot of excess charges and apply an electric field across its radial dimension. A large tuning range for the

Quantum Tunneling of Magnetization in Single Molecular Magnets Coupled to Ferromagnetic Reservoirs

OpenAIRE

Misiorny, Maciej; Barnas, Józef

2006-01-01

The role of spin polarized reservoirs in quantum tunneling of magnetization and relaxation processes in a single molecular magnet (SMM) is investigated theoretically. The SMM is exchange-coupled to the reservoirs and also subjected to a magnetic field varying in time, which enables the quantum tunneling of magnetization (QTM). The spin relaxation times are calculated from the Fermi golden rule. The exchange interaction with tunneling electrons is shown to affect the spin reversal due to QTM. ...

Quantum private comparison with d-level single-particle states

International Nuclear Information System (INIS)

Yu, Chao-Hua; Guo, Gong-De; Lin, Song

2013-01-01

In this paper, a quantum private comparison protocol with d-level single-particle states is proposed. In the protocol, a semi-honest third party is introduced to help two participants compare the size relationship of their secrets without revealing them to any other people. It is shown that the protocol is secure in theory. Moreover, the security of the protocol in real circumstance is also discussed. (paper)

Towards deterministically controlled InGaAs/GaAs lateral quantum dot molecules

International Nuclear Information System (INIS)

Wang, L; Rastelli, A; Kiravittaya, S; Atkinson, P; Schmidt, O G; Ding, F; Bufon, C C Bof; Hermannstaedter, C; Witzany, M; Beirne, G J; Michler, P

2008-01-01

We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot molecules (QDMs) embedded in a GaAs matrix and we discuss strategies to fully control their spatial configuration and electronic properties. The three-dimensional morphology of encapsulated QDMs was revealed by selective wet chemical etching of the GaAs top capping layer and subsequent imaging by atomic force microscopy (AFM). The AFM investigation showed that different overgrowth procedures have a profound consequence on the QDM height and shape. QDMs partially capped and annealed in situ for micro-photoluminescence spectroscopy consist of shallow but well-defined quantum dots (QDs) in contrast to misleading results usually provided by surface morphology measurements when they are buried by a thin GaAs layer. This uncapping approach is crucial for determining the QDM structural parameters, which are required for modeling the system. A single-band effective-mass approximation is employed to calculate the confined electron and heavy-hole energy levels, taking the geometry and structural information extracted from the uncapping experiments as inputs. The calculated transition energy of the single QDM shows good agreement with the experimentally observed values. By decreasing the edge-to-edge distance between the two QDs within a QDM, a splitting of the electron (hole) wavefunction into symmetric and antisymmetric states is observed, indicating the presence of lateral coupling. Site control of such lateral QDMs obtained by growth on a pre-patterned substrate, combined with a technology to fabricate gate structures at well-defined positions with respect to the QDMs, could lead to deterministically controlled devices based on QDMs

Single-step fabrication of quantum funnels via centrifugal colloidal casting of nanoparticle films

Science.gov (United States)

Kim, Jin Young; Adinolfi, Valerio; Sutherland, Brandon R.; Voznyy, Oleksandr; Kwon, S. Joon; Kim, Tae Wu; Kim, Jeongho; Ihee, Hyotcherl; Kemp, Kyle; Adachi, Michael; Yuan, Mingjian; Kramer, Illan; Zhitomirsky, David; Hoogland, Sjoerd; Sargent, Edward H.

2015-01-01

Centrifugal casting of composites and ceramics has been widely employed to improve the mechanical and thermal properties of functional materials. This powerful method has yet to be deployed in the context of nanoparticles—yet size–effect tuning of quantum dots is among their most distinctive and application-relevant features. Here we report the first gradient nanoparticle films to be constructed in a single step. By creating a stable colloid of nanoparticles that are capped with electronic-conduction-compatible ligands we were able to leverage centrifugal casting for thin-films devices. This new method, termed centrifugal colloidal casting, is demonstrated to form films in a bandgap-ordered manner with efficient carrier funnelling towards the lowest energy layer. We constructed the first quantum-gradient photodiode to be formed in a single deposition step and, as a result of the gradient-enhanced electric field, experimentally measured the highest normalized detectivity of any colloidal quantum dot photodetector. PMID:26165185

Single-step fabrication of quantum funnels via centrifugal colloidal casting of nanoparticle films.

KAUST Repository

Kim, Jin Young; Adinolfi, Valerio; Sutherland, Brandon R; Voznyy, Oleksandr; Kwon, S Joon; Kim, Tae Wu; Kim, Jeongho; Ihee, Hyotcherl; Kemp, Kyle; Adachi, Michael; Yuan, Mingjian; Kramer, Illan; Zhitomirsky, David; Hoogland, Sjoerd; Sargent, Edward H

2015-01-01

Centrifugal casting of composites and ceramics has been widely employed to improve the mechanical and thermal properties of functional materials. This powerful method has yet to be deployed in the context of nanoparticles--yet size-effect tuning of quantum dots is among their most distinctive and application-relevant features. Here we report the first gradient nanoparticle films to be constructed in a single step. By creating a stable colloid of nanoparticles that are capped with electronic-conduction-compatible ligands we were able to leverage centrifugal casting for thin-films devices. This new method, termed centrifugal colloidal casting, is demonstrated to form films in a bandgap-ordered manner with efficient carrier funnelling towards the lowest energy layer. We constructed the first quantum-gradient photodiode to be formed in a single deposition step and, as a result of the gradient-enhanced electric field, experimentally measured the highest normalized detectivity of any colloidal quantum dot photodetector.

Single-step fabrication of quantum funnels via centrifugal colloidal casting of nanoparticle films.

KAUST Repository

Kim, Jin Young

2015-07-13

Centrifugal casting of composites and ceramics has been widely employed to improve the mechanical and thermal properties of functional materials. This powerful method has yet to be deployed in the context of nanoparticles--yet size-effect tuning of quantum dots is among their most distinctive and application-relevant features. Here we report the first gradient nanoparticle films to be constructed in a single step. By creating a stable colloid of nanoparticles that are capped with electronic-conduction-compatible ligands we were able to leverage centrifugal casting for thin-films devices. This new method, termed centrifugal colloidal casting, is demonstrated to form films in a bandgap-ordered manner with efficient carrier funnelling towards the lowest energy layer. We constructed the first quantum-gradient photodiode to be formed in a single deposition step and, as a result of the gradient-enhanced electric field, experimentally measured the highest normalized detectivity of any colloidal quantum dot photodetector.

A Quantum Field Approach for Advancing Optical Coherence Tomography Part I: First Order Correlations, Single Photon Interference, and Quantum Noise.

Science.gov (United States)

Brezinski, M E

2018-01-01

Optical coherence tomography has become an important imaging technology in cardiology and ophthalmology, with other applications under investigations. Major advances in optical coherence tomography (OCT) imaging are likely to occur through a quantum field approach to the technology. In this paper, which is the first part in a series on the topic, the quantum basis of OCT first order correlations is expressed in terms of full field quantization. Specifically first order correlations are treated as the linear sum of single photon interferences along indistinguishable paths. Photons and the electromagnetic (EM) field are described in terms of quantum harmonic oscillators. While the author feels the study of quantum second order correlations will lead to greater paradigm shifts in the field, addressed in part II, advances from the study of quantum first order correlations are given. In particular, ranging errors are discussed (with remedies) from vacuum fluctuations through the detector port, photon counting errors, and position probability amplitude uncertainty. In addition, the principles of quantum field theory and first order correlations are needed for studying second order correlations in part II.

A Quantum Field Approach for Advancing Optical Coherence Tomography Part I: First Order Correlations, Single Photon Interference, and Quantum Noise

Science.gov (United States)

Brezinski, ME

2018-01-01

Optical coherence tomography has become an important imaging technology in cardiology and ophthalmology, with other applications under investigations. Major advances in optical coherence tomography (OCT) imaging are likely to occur through a quantum field approach to the technology. In this paper, which is the first part in a series on the topic, the quantum basis of OCT first order correlations is expressed in terms of full field quantization. Specifically first order correlations are treated as the linear sum of single photon interferences along indistinguishable paths. Photons and the electromagnetic (EM) field are described in terms of quantum harmonic oscillators. While the author feels the study of quantum second order correlations will lead to greater paradigm shifts in the field, addressed in part II, advances from the study of quantum first order correlations are given. In particular, ranging errors are discussed (with remedies) from vacuum fluctuations through the detector port, photon counting errors, and position probability amplitude uncertainty. In addition, the principles of quantum field theory and first order correlations are needed for studying second order correlations in part II.

Observation of quasiperiodic dynamics in a one-dimensional quantum walk of single photons in space

Science.gov (United States)

Xue, Peng; Qin, Hao; Tang, Bao; Sanders, Barry C.

2014-05-01

We realize the quasi-periodic dynamics of a quantum walker over 2.5 quasi-periods by realizing the walker as a single photon passing through a quantum-walk optical-interferometer network. We introduce fully controllable polarization-independent phase shifters in each optical path to realize arbitrary site-dependent phase shifts, and employ large clear-aperture beam displacers, while maintaining high-visibility interference, to enable 10 quantum-walk steps to be reached. By varying the half-wave-plate setting, we control the quantum-coin bias thereby observing a transition from quasi-periodic dynamics to ballistic diffusion.

Single-step colloidal quantum dot films for infrared solar harvesting

KAUST Repository

Kiani, Amirreza

2016-11-01

Semiconductors with bandgaps in the near- to mid-infrared can harvest solar light that is otherwise wasted by conventional single-junction solar cell architectures. In particular, colloidal quantum dots (CQDs) are promising materials since they are cost-effective, processed from solution, and have a bandgap that can be tuned into the infrared (IR) via the quantum size effect. These characteristics enable them to harvest the infrared portion of the solar spectrum to which silicon is transparent. To date, IR CQD solar cells have been made using a wasteful and complex sequential layer-by-layer process. Here, we demonstrate ∼1 eV bandgap solar-harvesting CQD films deposited in a single step. By engineering a fast-drying solvent mixture for metal iodide-capped CQDs, we deposited active layers greater than 200 nm in thickness having a mean roughness less than 1 nm. We integrated these films into infrared solar cells that are stable in air and exhibit power conversion efficiencies of 3.5% under illumination by the full solar spectrum, and 0.4% through a simulated silicon solar cell filter.

Interference with a quantum dot single-photon source and a laser at telecom wavelength

Energy Technology Data Exchange (ETDEWEB)

Felle, M. [Toshiba Research Europe Limited, Cambridge Research Laboratory, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Centre for Advanced Photonics and Electronics, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Huwer, J., E-mail: jan.huwer@crl.toshiba.co.uk; Stevenson, R. M.; Skiba-Szymanska, J.; Ward, M. B.; Shields, A. J. [Toshiba Research Europe Limited, Cambridge Research Laboratory, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Penty, R. V. [Centre for Advanced Photonics and Electronics, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0FA (United Kingdom)

2015-09-28

The interference of photons emitted by dissimilar sources is an essential requirement for a wide range of photonic quantum information applications. Many of these applications are in quantum communications and need to operate at standard telecommunication wavelengths to minimize the impact of photon losses and be compatible with existing infrastructure. Here, we demonstrate for the first time the quantum interference of telecom-wavelength photons from an InAs/GaAs quantum dot single-photon source and a laser; an important step towards such applications. The results are in good agreement with a theoretical model, indicating a high degree of indistinguishability for the interfering photons.

Interference with a quantum dot single-photon source and a laser at telecom wavelength

International Nuclear Information System (INIS)

Felle, M.; Huwer, J.; Stevenson, R. M.; Skiba-Szymanska, J.; Ward, M. B.; Shields, A. J.; Farrer, I.; Ritchie, D. A.; Penty, R. V.

2015-01-01

The interference of photons emitted by dissimilar sources is an essential requirement for a wide range of photonic quantum information applications. Many of these applications are in quantum communications and need to operate at standard telecommunication wavelengths to minimize the impact of photon losses and be compatible with existing infrastructure. Here, we demonstrate for the first time the quantum interference of telecom-wavelength photons from an InAs/GaAs quantum dot single-photon source and a laser; an important step towards such applications. The results are in good agreement with a theoretical model, indicating a high degree of indistinguishability for the interfering photons

Microwave testing of high-Tc based direct current to a single flux quantum converter

DEFF Research Database (Denmark)

Kaplunenko, V. K.; Fischer, Gerd Michael; Ivanov, Z. G.

1994-01-01

Design, simulation, and experimental investigations of a direct current to a single flux quantum converter loaded with a Josephson transmission line and driven by an external 70 GHz microwave oscillator are reported. The test circuit includes nine YBaCuO Josephson junctions aligned on the grain...... boundary of a 0°–32° asymmetric Y-ZrO2 bicrystal substrate. The performance of such converters is important for the development of the fast Josephson samplers required for testing of high-Tc rapid single flux quantum circuits in high-speed digital superconducting electronics. Journal of Applied Physics...

Constructions of secure entanglement channels assisted by quantum dots inside single-sided optical cavities

Science.gov (United States)

Heo, Jino; Kang, Min-Sung; Hong, Chang-Ho; Choi, Seong-Gon; Hong, Jong-Phil

2017-08-01

We propose quantum information processing schemes to generate and swap entangled states based on the interactions between flying photons and quantum dots (QDs) confined within optical cavities for quantum communication. To produce and distribute entangled states (Bell and Greenberger-Horne-Zeilinger [GHZ] states) between the photonic qubits of flying photons of consumers (Alice and Bob) and electron-spin qubits of a provider (trust center, or TC), the TC employs the interactions of the QD-cavity system, which is composed of a charged QD (negatively charged exciton) inside a single-sided cavity. Subsequently, the TC constructs an entanglement channel (Bell state and 4-qubit GHZ state) to link one consumer with another through entanglement swapping, which can be realized to exploit a probe photon with interactions of the QD-cavity systems and single-qubit measurements without Bell state measurement, for quantum communication between consumers. Consequently, the TC, which has quantum nodes (QD-cavity systems), can accomplish constructing the entanglement channel (authenticated channel) between two separated consumers from the distributions of entangled states and entanglement swapping. Furthermore, our schemes using QD-cavity systems, which are feasible with a certain probability of success and high fidelity, can be experimentally implemented with technology currently in use.

Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

International Nuclear Information System (INIS)

Kumar, Rahul; Bag, Ankush; Mukhopadhyay, Partha; Das, Subhashis; Biswas, Dhrubes

2015-01-01

Highlights: • InGaAs graded MBs with different grading scheme has been grown by MBE on GaAs. • Continuously graded MB exhibits smoother surface morphology. • Grading scheme has been found to have little impact on lattice relaxation. • Grading schemeaffects the lattice tilt significantly. • Cross-hatch surface irregularities affect the crystallographic tilt. - Abstract: InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

Energy Technology Data Exchange (ETDEWEB)

Kumar, Rahul, E-mail: rkp203@gmail.com [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Bag, Ankush [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Mukhopadhyay, Partha [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur 721302 (India); Das, Subhashis [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Biswas, Dhrubes [Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

2015-12-01

Highlights: • InGaAs graded MBs with different grading scheme has been grown by MBE on GaAs. • Continuously graded MB exhibits smoother surface morphology. • Grading scheme has been found to have little impact on lattice relaxation. • Grading schemeaffects the lattice tilt significantly. • Cross-hatch surface irregularities affect the crystallographic tilt. - Abstract: InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

Quantum Hall states of atomic Bose gases: Density profiles in single-layer and multilayer geometries

International Nuclear Information System (INIS)

Cooper, N. R.; Lankvelt, F. J. M. van; Reijnders, J. W.; Schoutens, K.

2005-01-01

We describe the density profiles of confined atomic Bose gases in the high-rotation limit, in single-layer and multilayer geometries. We show that, in a local-density approximation, the density in a single layer shows a landscape of quantized steps due to the formation of incompressible liquids, which are analogous to fractional quantum Hall liquids for a two-dimensional electron gas in a strong magnetic field. In a multilayered setup we find different phases, depending on the strength of the interlayer tunneling t. We discuss the situation where a vortex lattice in the three-dimensional condensate (at large tunneling) undergoes quantum melting at a critical tunneling t c 1 . For tunneling well below t c 1 one expects weakly coupled or isolated layers, each exhibiting a landscape of quantum Hall liquids. After expansion, this gives a radial density distribution with characteristic features (cusps) that provide experimental signatures of the quantum Hall liquids

Heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides

Energy Technology Data Exchange (ETDEWEB)

Song, Guo-Zhu; Zhang, Mei; Ai, Qing; Yang, Guo-Jian [Department of Physics, Applied Optics Beijing Area Major Laboratory, Beijing Normal University, Beijing 100875 (China); Alsaedi, Ahmed; Hobiny, Aatef [NAAM-Research Group, Department of Mathematics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21589 (Saudi Arabia); Deng, Fu-Guo, E-mail: fgdeng@bnu.edu.cn [Department of Physics, Applied Optics Beijing Area Major Laboratory, Beijing Normal University, Beijing 100875 (China); NAAM-Research Group, Department of Mathematics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21589 (Saudi Arabia)

2017-03-15

We propose a heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides. We show the details by implementing nonlocal entanglement generation, entanglement swapping, and entanglement purification modules with atoms in waveguides, and discuss the feasibility of the repeater with currently achievable technology. In our scheme, the faulty events can be discarded by detecting the polarization of the photons. That is, our protocols are accomplished with a fidelity of 100% in principle, which is advantageous for implementing realistic long-distance quantum communication. Moreover, additional atomic qubits are not required, but only a single-photon medium. Our scheme is scalable and attractive since it can be realized in solid-state quantum systems. With the great progress on controlling atom-waveguide systems, the repeater may be very useful in quantum information processing in the future.

Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation

Directory of Open Access Journals (Sweden)

R. Salas

2017-09-01

Full Text Available We report the effects of the growth rate on the properties of iii-v nanocomposites containing rare-earth-monopnictide nanoparticles. In particular, the beneficial effects of surfactant-assisted growth of LuAs:In0.53Ga0.47As nanocomposites were found to be most profound at reduced LuAs growth rates. Substantial enhancement in the electrical and optical properties that are beneficial for ultrafast photoconductors was observed and is attributed to the higher structural quality of the InGaAs matrix in this new growth regime. The combined enhancements enabled a >50% increase in the amount of LuAs that could be grown without degrading the quality of the InGaAs overgrowth. Dark resistivity increased by ∼25× while maintaining carrier mobilities over 3000 cm2/V s; carrier lifetimes were reduced by >2×, even at high depositions of LuAs. The combined growth rate and surfactant enhancements offer a previously unexplored regime to enable high-performance fast photoconductors that may be integrated with telecom components for compact, broadly tunable, heterodyne THz source and detectors.

Preparation and coherent manipulation of pure quantum states of a single molecular ion

Science.gov (United States)

Chou, Chin-Wen; Kurz, Christoph; Hume, David B.; Plessow, Philipp N.; Leibrandt, David R.; Leibfried, Dietrich

2017-05-01

Laser cooling and trapping of atoms and atomic ions has led to advances including the observation of exotic phases of matter, the development of precision sensors and state-of-the-art atomic clocks. The same level of control in molecules could also lead to important developments such as controlled chemical reactions and sensitive probes of fundamental theories, but the vibrational and rotational degrees of freedom in molecules pose a challenge for controlling their quantum mechanical states. Here we use quantum-logic spectroscopy, which maps quantum information between two ion species, to prepare and non-destructively detect quantum mechanical states in molecular ions. We develop a general technique for optical pumping and preparation of the molecule into a pure initial state. This enables us to observe high-resolution spectra in a single ion (CaH+) and coherent phenomena such as Rabi flopping and Ramsey fringes. The protocol requires a single, far-off-resonant laser that is not specific to the molecule, so many other molecular ions, including polyatomic species, could be treated using the same methods in the same apparatus by changing the molecular source. Combined with the long interrogation times afforded by ion traps, a broad range of molecular ions could be studied with unprecedented control and precision. Our technique thus represents a critical step towards applications such as precision molecular spectroscopy, stringent tests of fundamental physics, quantum computing and precision control of molecular dynamics.

Intrinsic errors in transporting a single-spin qubit through a double quantum dot

Science.gov (United States)

Li, Xiao; Barnes, Edwin; Kestner, J. P.; Das Sarma, S.

2017-07-01

Coherent spatial transport or shuttling of a single electron spin through semiconductor nanostructures is an important ingredient in many spintronic and quantum computing applications. In this work we analyze the possible errors in solid-state quantum computation due to leakage in transporting a single-spin qubit through a semiconductor double quantum dot. In particular, we consider three possible sources of leakage errors associated with such transport: finite ramping times, spin-dependent tunneling rates between quantum dots induced by finite spin-orbit couplings, and the presence of multiple valley states. In each case we present quantitative estimates of the leakage errors, and discuss how they can be minimized. The emphasis of this work is on how to deal with the errors intrinsic to the ideal semiconductor structure, such as leakage due to spin-orbit couplings, rather than on errors due to defects or noise sources. In particular, we show that in order to minimize leakage errors induced by spin-dependent tunnelings, it is necessary to apply pulses to perform certain carefully designed spin rotations. We further develop a formalism that allows one to systematically derive constraints on the pulse shapes and present a few examples to highlight the advantage of such an approach.

Single atom doping for quantum device development in diamond and silicon

NARCIS (Netherlands)

Weis, C.D.; Schuh, A.; Batra, A.; Persaud, A.; Rangelow, I.W.; Bokor, J.; Lo, C.C.; Cabrini, S.; Sideras-Haddad, E.; Fuchs, G.D.; Hanson, R.; Awschalom, D.D.; Schenkel, T.

2008-01-01

The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species, and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in

Method for preparation and readout of polyatomic molecules in single quantum states

Science.gov (United States)

Patterson, David

2018-03-01

Polyatomic molecular ions contain many desirable attributes of a useful quantum system, including rich internal degrees of freedom and highly controllable coupling to the environment. To date, the vast majority of state-specific experimental work on molecular ions has concentrated on diatomic species. The ability to prepare and read out polyatomic molecules in single quantum states would enable diverse experimental avenues not available with diatomics, including new applications in precision measurement, sensitive chemical and chiral analysis at the single-molecule level, and precise studies of Hz-level molecular tunneling dynamics. While cooling the motional state of a polyatomic ion via sympathetic cooling with a laser-cooled atomic ion is straightforward, coupling this motional state to the internal state of the molecule has proven challenging. Here we propose a method for readout and projective measurement of the internal state of a trapped polyatomic ion. The method exploits the rich manifold of technically accessible rotational states in the molecule to realize robust state preparation and readout with far less stringent engineering than quantum logic methods recently demonstrated on diatomic molecules. The method can be applied to any reasonably small (≲10 atoms) polyatomic ion with an anisotropic polarizability.

Quantum dots for quantum information technologies

CERN Document Server

2017-01-01

This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.

Quantum resonances in a single plaquette of Josephson junctions: excitations of Rabi oscillations

Science.gov (United States)

Fistul, M. V.

2002-03-01

We present a theoretical study of a quantum regime of the resistive (whirling) state of dc driven anisotropic single plaquette containing small Josephson junctions. The current-voltage characteristics of such systems display resonant steps that are due to the resonant interaction between the time dependent Josephson current and the excited electromagnetic oscillations (EOs). The voltage positions of the resonances are determined by the quantum interband transitions of EOs. We show that in the quantum regime as the system is driven on the resonance, coherent Rabi oscillations between the quantum levels of EOs occur. At variance with the classical regime the magnitude and the width of resonances are determined by the frequency of Rabi oscillations that in turn, depends in a peculiar manner on an externally applied magnetic field and the parameters of the system.

Room temperature observation of lateral quantization effects in modulated barrier InGaAs/InP wires

Energy Technology Data Exchange (ETDEWEB)

Kerkel, K.; Oshinowo, J.; Forchel, A. [Univ. of Wuerzburg (Germany). Technische Physik; Weber, J.; Zielinski, E. [Alcatel Corp., Stuttgart (Germany). Research Center

1996-12-31

The authors have fabricated buried InGaAs/InP quantum wires with widths down to 15 nm by high resolution electron beam lithography and selective wet chemical etching. In their approach, only the InP cap layer of an InGaAs/InP quantum well is locally removed. In the etched parts of the sample, InGaAs surface quantum wells are formed, where the conduction and valence band discontinuity between InGaAs and InP (600 meV) is replaced by the high vacuum barrier ({approximately}5 eV). Therefore the quantization energies are enlarged in the InGaAs surface quantum wells. This creates a lateral potential, that confines the carriers to the InP covered regions, which act as wires. The different thermal stability of both regions is used to enhance the lateral potential significantly in a subsequent rapid thermal annealing step. The wires show clear lateral quantization effects with energy shifts up to 13 meV and high luminescence intensities up to room temperature.

Nearly Blinking-Free, High-Purity Single-Photon Emission by Colloidal InP/ZnSe Quantum Dots.

Science.gov (United States)

Chandrasekaran, Vigneshwaran; Tessier, Mickaël D; Dupont, Dorian; Geiregat, Pieter; Hens, Zeger; Brainis, Edouard

2017-10-11

Colloidal core/shell InP/ZnSe quantum dots (QDs), recently produced using an improved synthesis method, have a great potential in life-science applications as well as in integrated quantum photonics and quantum information processing as single-photon emitters. Single-particle spectroscopy of 10 nm QDs with 3.2 nm cores reveals strong photon antibunching attributed to fast (70 ps) Auger recombination of multiple excitons. The QDs exhibit very good photostability under strong optical excitation. We demonstrate that the antibunching is preserved when the QDs are excited above the saturation intensity of the fundamental-exciton transition. This result paves the way toward their usage as high-purity on-demand single-photon emitters at room temperature. Unconventionally, despite the strong Auger blockade mechanism, InP/ZnSe QDs also display very little luminescence intermittency ("blinking"), with a simple on/off blinking pattern. The analysis of single-particle luminescence statistics places these InP/ZnSe QDs in the class of nearly blinking-free QDs, with emission stability comparable to state-of-the-art thick-shell and alloyed-interface CdSe/CdS, but with improved single-photon purity.

Quantum resonances in a single plaquette of Josephson junctions: excitations of Rabi oscillations

OpenAIRE

Fistul, M. V.

2001-01-01

We present a theoretical study of a quantum regime of the resistive (whirling) state of dc driven anisotropic single plaquette containing three small Josephson junctions. The current-voltage characteristics of such a system display resonant steps that are due to the resonant interaction between the time dependent Josephson current and the excited electromagnetic oscillations (EOs). The voltage positions of the resonances are determined by the quantum interband transitions of EOs. We show that...

Control of dynamic properties of InAs/InAlGaAs/InP hybrid quantum well-quantum dot structures designed as active parts of 1.55 μm emitting lasers

Energy Technology Data Exchange (ETDEWEB)

Rudno-Rudzinski, Wojciech; Syperek, Marcin; Marynski, Aleksander; Andrzejewski, Janusz; Misiewicz, Jan; Sek, Grzegorz [Faculty of Fundamental Problems of Technology, Department of Experimental Physics, Wroclaw University of Science and Technology, Wroclaw (Poland); Bauer, Sven; Sichkovskyi, Vitalii I.; Reithmaier, Johann P. [Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel (Germany); Schowalter, Marco; Gerken, Beeke; Rosenauer, Andreas [Institute of Solid State Physics, Universitaet Bremen (Germany)

2018-02-15

The molecular beam epitaxy grown structures are investigated, comprising of InGaAs quantum wells (QW) separated by a thin InGaAlAs barrier from InAs quantum dots (QDs), emitting at 1.55 μm, grown on an InP substrate. To control the coupling between QW and QD parts the thickness of the barrier is changed, which commands the wave function overlap. The tuning of that parameter allows for the study of the influence of the QW potential on the energy structure of states and their wave functions in QDs, changing from an uncoupled system, where the optical response is just a sum of responses from two isolated elements, to a strongly quantum mechanically coupled system, exhibiting mixed 2D-0D characteristics. The changes of the energy structure that are deduced from the photoreflectance and photoluminescence spectroscopy results, supported by 8-band k . p modeling, explain the measured differences in the photoluminescence decay times between samples with different barrier thicknesses. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fundamental limits to single-photon detection determined by quantum coherence and backaction

Science.gov (United States)

Young, Steve M.; Sarovar, Mohan; Léonard, François

2018-03-01

Single-photon detectors have achieved impressive performance and have led to a number of new scientific discoveries and technological applications. Existing models of photodetectors are semiclassical in that the field-matter interaction is treated perturbatively and time-separated from physical processes in the absorbing matter. An open question is whether a fully quantum detector, whereby the optical field, the optical absorption, and the amplification are considered as one quantum system, could have improved performance. Here we develop a theoretical model of such photodetectors and employ simulations to reveal the critical role played by quantum coherence and amplification backaction in dictating the performance. We show that coherence and backaction lead to trade-offs between detector metrics and also determine optimal system designs through control of the quantum-classical interface. Importantly, we establish the design parameters that result in a ideal photodetector with 100% efficiency, no dark counts, and minimal jitter, thus paving the route for next-generation detectors.

Hybrid confocal Raman fluorescence microscopy on single cells using semiconductor quantum dots

NARCIS (Netherlands)

van Manen, H.J.; Otto, Cornelis

2007-01-01

We have overcome the traditional incompatibility of Raman microscopy with fluorescence microscopy by exploiting the optical properties of semiconductor fluorescent quantum dots (QDs). Here we present a hybrid Raman fluorescence spectral imaging approach for single-cell microscopy applications. We

Scheme for secure swapping two unknown states of a photonic qubit and an electron-spin qubit using simultaneous quantum transmission and teleportation via quantum dots inside single-sided optical cavities

Energy Technology Data Exchange (ETDEWEB)

Heo, Jino [College of Electrical and Computer Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju (Korea, Republic of); Kang, Min-Sung [Center for Quantum Information, Korea Institute of Science and Technology (KIST), Seoul, 136-791 (Korea, Republic of); Hong, Chang-Ho [National Security Research Institute, P.O.Box 1, Yuseong, Daejeon, 34188 (Korea, Republic of); Choi, Seong-Gon [College of Electrical and Computer Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju (Korea, Republic of); Hong, Jong-Phil, E-mail: jongph@cbnu.ac.kr [College of Electrical and Computer Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju (Korea, Republic of)

2017-06-15

We propose a scheme for swapping two unknown states of a photon and electron spin confined to a charged quantum dot (QD) between two users by transferring a single photon. This scheme simultaneously transfers and teleports an unknown state (electron spin) between two users. For this bidirectional quantum communication, we utilize the interactions between a photonic and an electron-spin qubits of a QD located inside a single-sided optical cavity. Thus, our proposal using QD-cavity systems can obtain a certain success probability with high fidelity. Furthermore, compared to a previous scheme using cross-Kerr nonlinearities and homodyne detections, our scheme (using QD-cavity systems) can improve the feasibility under the decoherence effect in practice. - Highlights: • Design of Simultaneous quantum transmission and teleportation scheme via quantum dots and cavities. • We have developed the experimental feasibility of this scheme compared with the existing scheme. • Analysis of some benefits when our scheme is experimentally implemented using quantum dots and single-sided cavities.

A surface-gated InSb quantum well single electron transistor

International Nuclear Information System (INIS)

Orr, J M S; Buckle, P D; Fearn, M; Storey, C J; Buckle, L; Ashley, T

2007-01-01

Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum information processing devices. However, differences in material and device technology result in significant processing challenges. Simple Coulomb blockade and quantized confinement models are considered to explain the observation of conductance oscillations in these structures. The charging energy (e 2 /C) is found to be comparable with the energy spectrum for single particle states (ΔE)

Quantum Secure Dialogue with Quantum Encryption

International Nuclear Information System (INIS)

Ye Tian-Yu

2014-01-01

How to solve the information leakage problem has become the research focus of quantum dialogue. In this paper, in order to overcome the information leakage problem in quantum dialogue, a novel approach for sharing the initial quantum state privately between communicators, i.e., quantum encryption sharing, is proposed by utilizing the idea of quantum encryption. The proposed protocol uses EPR pairs as the private quantum key to encrypt and decrypt the traveling photons, which can be repeatedly used after rotation. Due to quantum encryption sharing, the public announcement on the state of the initial quantum state is omitted, thus the information leakage problem is overcome. The information-theoretical efficiency of the proposed protocol is nearly 100%, much higher than previous information leakage resistant quantum dialogue protocols. Moreover, the proposed protocol only needs single-photon measurements and nearly uses single photons as quantum resource so that it is convenient to implement in practice. (general)

Characterizing multi-photon quantum interference with practical light sources and threshold single-photon detectors

Science.gov (United States)

Navarrete, Álvaro; Wang, Wenyuan; Xu, Feihu; Curty, Marcos

2018-04-01

The experimental characterization of multi-photon quantum interference effects in optical networks is essential in many applications of photonic quantum technologies, which include quantum computing and quantum communication as two prominent examples. However, such characterization often requires technologies which are beyond our current experimental capabilities, and today's methods suffer from errors due to the use of imperfect sources and photodetectors. In this paper, we introduce a simple experimental technique to characterize multi-photon quantum interference by means of practical laser sources and threshold single-photon detectors. Our technique is based on well-known methods in quantum cryptography which use decoy settings to tightly estimate the statistics provided by perfect devices. As an illustration of its practicality, we use this technique to obtain a tight estimation of both the generalized Hong‑Ou‑Mandel dip in a beamsplitter with six input photons and the three-photon coincidence probability at the output of a tritter.

The photonic nanowire: an emerging platform for highly efficient single-photon sources for quantum information applications

DEFF Research Database (Denmark)

Gregersen, Niels; Munsch, Mathieu; Malik, Nitin S.

2013-01-01

Efficient coupling between a localized quantum emitter and a well defined optical channel represents a powerful route to realize single-photon sources and spin-photon interfaces. The tailored fiber-like photonic nanowire embedding a single quantum dot has recently demonstrated an appealing...... potential. However, the device requires a delicate, sharp needle-like taper with performance sensitive to minute geometrical details. To overcome this limitation we demonstrate the photonic trumpet, exploiting an opposite tapering strategy. The trumpet features a strongly Gaussian far-field emission...

Experimental realization of highly efficient broadband coupling of single quantum dots to a photonic crystal waveguide

DEFF Research Database (Denmark)

Lund-Hansen, Toke; Stobbe, Søren; Julsgaard, Brian

2008-01-01

We present time-resolved spontaneous emission measurements of single quantum dots embedded in photonic crystal waveguides. Quantum dots that couple to a photonic crystal waveguide are found to decay up to 27 times faster than uncoupled quantum dots. From these measurements -factors of up to 0.89 ...... taking into account that the light-matter coupling is strongly enhanced due to the significant slow-down of light in the photonic crystal waveguides....

Quantum Dots

Science.gov (United States)

Tartakovskii, Alexander

2012-07-01

Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by

Correlation effects of excited charge carriers in semiconductor nanostructures on the example of InGaAs quantum dots and atomic MoS{sub 2} monolayers; Korrelationseffekte angeregter Ladungstraeger in Halbleiter-Nanostrukturen am Beispiel von InGaAs-Quantenpunkten und atomaren MoS{sub 2}-Monolagen

Energy Technology Data Exchange (ETDEWEB)

Steinhoff, Alexander

2014-11-10

Semiconductor nanostructures are applied in various electronic and optoelectronic devices. As miniaturization of these devices progresses, a microscopic treatment of correlations between excited carriers is essential for understanding and describing the governing physics. We investigate two different types of semiconductor nanostructures, which have each received considerable attention over the last years. These are self-assembled InGaAs quantum dots (QDs) on the one hand and atomic monolayers of MoS{sub 2} on the other hand. Self-assembled semiconductor QDs are used as active material in conventional lasers and as efficient non-classical light sources with applications in quantum information. As they can confine a small number of carriers in localized stats with discrete energies, it is questionable to neglect correlations between the carriers when describing their dynamics. We analyze the influence of carrier correlations in a single QD on Coulomb scattering processes, which are due to the contact with a quasi-continuum of wetting-layer (WL) states. Results obtained from a Boltzmann equation are compared with the fully correlated dynamics governed by a von-Neumann-Lindblad equation. In a first step, we take into account correlations generated by the exact treatment of Pauli blocking due to the contributing QD carrier configurations. Subsequently, we include correlations generated by energy renormalizations due to Coulomb interaction between the QD carriers. It is shown that at low WL carrier densities, neither Pauli correlations nor Coulomb correlations can be safely neglected, if the dynamics of single-particle states in the QD are to be predicted qualitatively and quantitatively. In the high-density regime, both types of correlations play a lesser role and thus a description of carrier dynamics by a Boltzmann equation becomes reliable. Furthermore, the efficiency of WL-assisted scattering processes as well as scattering-induced dephasing rates depending on the

Construction of a single atom trap for quantum information protocols

Science.gov (United States)

Shea, Margaret E.; Baker, Paul M.; Gauthier, Daniel J.; Duke Physics Department Team

2016-05-01

The field of quantum information science addresses outstanding problems such as achieving fundamentally secure communication and solving computationally hard problems. Great progress has been made in the field, particularly using photons coupled to ions and super conducting qubits. Neutral atoms are also interesting for these applications and though the technology for control of neutrals lags behind that of trapped ions, they offer some key advantages: primarily coupling to optical frequencies closer to the telecom band than trapped ions or superconducting qubits. Here we report progress on constructing a single atom trap for 87 Rb. This system is a promising platform for studying the technical problems facing neutral atom quantum computing. For example, most protocols destroy the trap when reading out the neutral atom's state; we will investigate an alternative non-destructive state detection scheme. We detail the experimental systems involved and the challenges addressed in trapping a single atom. All of our hardware components are off the shelf and relatively inexpensive. Unlike many other systems, we place a high numerical aperture lens inside our vacuum system to increase photon collection efficiency. We gratefully acknowledge the financial support of the ARO through Grant # W911NF1520047.

Quantum and classical control of single photon states via a mechanical resonator

International Nuclear Information System (INIS)

Basiri-Esfahani, Sahar; Myers, Casey R; Combes, Joshua; Milburn, G J

2016-01-01

Optomechanical systems typically use light to control the quantum state of a mechanical resonator. In this paper, we propose a scheme for controlling the quantum state of light using the mechanical degree of freedom as a controlled beam splitter. Preparing the mechanical resonator in non-classical states enables an optomechanical Stern–Gerlach interferometer. When the mechanical resonator has a small coherent amplitude it acts as a quantum control, entangling the optical and mechanical degrees of freedom. As the coherent amplitude of the resonator increases, we recover single photon and two-photon interference via a classically controlled beam splitter. The visibility of the two-photon interference is particularly sensitive to coherent excitations in the mechanical resonator and this could form the basis of an optically transduced weak-force sensor. (paper)

Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection.

Science.gov (United States)

Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei

2015-03-23

Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn "photon-switches" to "OFF" state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished.

Single ion impact detection and scanning probe aligned ion implantation for quantum bit formation

International Nuclear Information System (INIS)

Weis, Christoph D.

2011-01-01

Quantum computing and quantum information processing is a promising path to replace classical information processing via conventional computers which are approaching fundamental physical limits. Instead of classical bits, quantum bits (qubits) are utilized for computing operations. Due to quantum mechanical phenomena such as superposition and entanglement, a completely different way of information processing is achieved, enabling enhanced performance for certain problem sets. Various proposals exist on how to realize a quantum bit. Among them are electron or nuclear spins of defect centers in solid state systems. Two such candidates with spin degree of freedom are single donor atoms in silicon and nitrogen vacancy (NV) defect centers in diamond. Both qubit candidates possess extraordinary qualities which makes them promising building blocks. Besides certain advantages, the qubits share the necessity to be placed precisely in their host materials and device structures. A commonly used method is to introduce the donor atoms into the substrate materials via ion implantation. For this, focused ion beam systems can be used, or collimation techniques as in this work. A broad ion beam hits the back of a scanning probe microscope (SPM) cantilever with incorporated apertures. The high resolution imaging capabilities of the SPM allows the non destructive location of device areas and the alignment of the cantilever and thus collimated ion beam spot to the desired implant locations. In this work, this technique is explored, applied and pushed forward to meet necessary precision requirements. The alignment of the ion beam to surface features, which are sensitive to ion impacts and thus act as detectors, is demonstrated. The technique is also used to create NV center arrays in diamond substrates. Further, single ion impacts into silicon device structures are detected which enables deliberate single ion doping.

Single ion impact detection and scanning probe aligned ion implantation for quantum bit formation

Energy Technology Data Exchange (ETDEWEB)

Weis, Christoph D.

2011-10-04

Quantum computing and quantum information processing is a promising path to replace classical information processing via conventional computers which are approaching fundamental physical limits. Instead of classical bits, quantum bits (qubits) are utilized for computing operations. Due to quantum mechanical phenomena such as superposition and entanglement, a completely different way of information processing is achieved, enabling enhanced performance for certain problem sets. Various proposals exist on how to realize a quantum bit. Among them are electron or nuclear spins of defect centers in solid state systems. Two such candidates with spin degree of freedom are single donor atoms in silicon and nitrogen vacancy (NV) defect centers in diamond. Both qubit candidates possess extraordinary qualities which makes them promising building blocks. Besides certain advantages, the qubits share the necessity to be placed precisely in their host materials and device structures. A commonly used method is to introduce the donor atoms into the substrate materials via ion implantation. For this, focused ion beam systems can be used, or collimation techniques as in this work. A broad ion beam hits the back of a scanning probe microscope (SPM) cantilever with incorporated apertures. The high resolution imaging capabilities of the SPM allows the non destructive location of device areas and the alignment of the cantilever and thus collimated ion beam spot to the desired implant locations. In this work, this technique is explored, applied and pushed forward to meet necessary precision requirements. The alignment of the ion beam to surface features, which are sensitive to ion impacts and thus act as detectors, is demonstrated. The technique is also used to create NV center arrays in diamond substrates. Further, single ion impacts into silicon device structures are detected which enables deliberate single ion doping.

Copenhagen's single system premise prevents a unified view of integer and fractional quantum Hall effect

CERN Document Server

Post, E J

1999-01-01

This essay presents conclusive evidence of the impermissibility of Copenhagen's single system interpretation of the Schroedinger process. The latter needs to be viewed as a tool exclusively describing phase and orientation randomized ensembles and is not be used for isolated single systems. Asymptotic closeness of single system and ensemble behavior and the rare nature of true single system manifestations have prevented a definitive identification of this Copenhagen deficiency over the past three quarter century. Quantum uncertainty so becomes a basic trade mark of phase and orientation disordered ensembles. The ensuing void of usable single system tools opens a new inquiry for tools without statistical connotations. Three, in part already known, period integrals here identified as flux, charge and action counters emerge as diffeo-4 invariant tools fully compatible with the demands of the general theory of relativity. The discovery of the quantum Hall effect has been instrumental in forcing a distinction betw...

Single-cell magnetic imaging using a quantum diamond microscope.

Science.gov (United States)

Glenn, D R; Lee, K; Park, H; Weissleder, R; Yacoby, A; Lukin, M D; Lee, H; Walsworth, R L; Connolly, C B

2015-08-01

We apply a quantum diamond microscope for detection and imaging of immunomagnetically labeled cells. This instrument uses nitrogen-vacancy (NV) centers in diamond for correlated magnetic and fluorescence imaging. Our device provides single-cell resolution and a field of view (∼1 mm(2)) two orders of magnitude larger than that of previous NV imaging technologies, enabling practical applications. To illustrate, we quantified cancer biomarkers expressed by rare tumor cells in a large population of healthy cells.

Scalable quantum computer architecture with coupled donor-quantum dot qubits

Science.gov (United States)

Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

2014-08-26

A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

Quasi-one-dimensional density of states in a single quantum ring.

Science.gov (United States)

Kim, Heedae; Lee, Woojin; Park, Seongho; Kyhm, Kwangseuk; Je, Koochul; Taylor, Robert A; Nogues, Gilles; Dang, Le Si; Song, Jin Dong

2017-01-05

Generally confinement size is considered to determine the dimensionality of nanostructures. While the exciton Bohr radius is used as a criterion to define either weak or strong confinement in optical experiments, the binding energy of confined excitons is difficult to measure experimentally. One alternative is to use the temperature dependence of the radiative recombination time, which has been employed previously in quantum wells and quantum wires. A one-dimensional loop structure is often assumed to model quantum rings, but this approximation ceases to be valid when the rim width becomes comparable to the ring radius. We have evaluated the density of states in a single quantum ring by measuring the temperature dependence of the radiative recombination of excitons, where the photoluminescence decay time as a function of temperature was calibrated by using the low temperature integrated intensity and linewidth. We conclude that the quasi-continuous finely-spaced levels arising from the rotation energy give rise to a quasi-one-dimensional density of states, as long as the confined exciton is allowed to rotate around the opening of the anisotropic ring structure, which has a finite rim width.

Real-time monitoring of Lévy flights in a single quantum system

Science.gov (United States)

Issler, M.; Höller, J.; Imamoǧlu, A.

2016-02-01

Lévy flights are random walks where the dynamics is dominated by rare events. Even though they have been studied in vastly different physical systems, their observation in a single quantum system has remained elusive. Here we analyze a periodically driven open central spin system and demonstrate theoretically that the dynamics of the spin environment exhibits Lévy flights. For the particular realization in a single-electron charged quantum dot driven by periodic resonant laser pulses, we use Monte Carlo simulations to confirm that the long waiting times between successive nuclear spin-flip events are governed by a power-law distribution; the corresponding exponent η =-3 /2 can be directly measured in real time by observing the waiting time distribution of successive photon emission events. Remarkably, the dominant intrinsic limitation of the scheme arising from nuclear quadrupole coupling can be minimized by adjusting the magnetic field or by implementing spin echo.

In-plane nuclear field formation investigated in single self-assembled quantum dots

Science.gov (United States)

Yamamoto, S.; Matsusaki, R.; Kaji, R.; Adachi, S.

2018-02-01

We studied the formation mechanism of the in-plane nuclear field in single self-assembled In0.75Al0.25As /Al0.3Ga0.7As quantum dots. The Hanle curves with an anomalously large width and hysteretic behavior at the critical transverse magnetic field were observed in many single quantum dots grown in the same sample. In order to explain the anomalies in the Hanle curve indicating the formation of a large nuclear field perpendicular to the photo-injected electron spin polarization, we propose a new model based on the current phenomenological model for dynamic nuclear spin polarization. The model includes the effects of the nuclear quadrupole interaction and the sign inversion between in-plane and out-of-plane components of nuclear g factors, and the model calculations reproduce successfully the characteristics of the observed anomalies in the Hanle curves.

Pulsed neural networks consisting of single-flux-quantum spiking neurons

International Nuclear Information System (INIS)

Hirose, T.; Asai, T.; Amemiya, Y.

2007-01-01

An inhibitory pulsed neural network was developed for brain-like information processing, by using single-flux-quantum (SFQ) circuits. It consists of spiking neuron devices that are coupled to each other through all-to-all inhibitory connections. The network selects neural activity. The operation of the neural network was confirmed by computer simulation. SFQ neuron devices can imitate the operation of the inhibition phenomenon of neural networks

Nanostructured current-confined single quantum dot light-emitting diode at 1300 nm

NARCIS (Netherlands)

Monat, C.; Alloing, B.; Zinoni, C.; Li, L.; Fiore, A.

2006-01-01

A novel light-emitting-diode structure is demonstrated, which relies on nanoscale current injection through an oxide aperture to achieve selective excitation of single InAs/GaAs quantum dots. Low-temp. electroluminescence spectra evidence discrete narrow lines around 1300 nm (line width ~ 75 micro

Fiber-coupled NbN superconducting single-photon detectors for quantum correlation measurements

NARCIS (Netherlands)

Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gorska, M.; Reiger, E.; Dorenbos, S.; Zwiller, V.; Milostnaya, I.; Minaeva, O.

2007-01-01

We have fabricated fiber-coupled superconducting single-photon detectors (SSPDs), designed for quantum-correlationtype experiments. The SSPDs are nanostructured (~100-nm wide and 4-nm thick) NbN superconducting meandering stripes, operated in the 2 to 4.2 K temperature range, and known for ultrafast

Microwave-Controlled Generation of Shaped Single Photons in Circuit Quantum Electrodynamics

Directory of Open Access Journals (Sweden)

M. Pechal

2014-10-01

Full Text Available Large-scale quantum information processors or quantum communication networks will require reliable exchange of information between spatially separated nodes. The links connecting these nodes can be established using traveling photons that need to be absorbed at the receiving node with high efficiency. This is achievable by shaping the temporal profile of the photons and absorbing them at the receiver by time reversing the emission process. Here, we demonstrate a scheme for creating shaped microwave photons using a superconducting transmon-type three-level system coupled to a transmission line resonator. In a second-order process induced by a modulated microwave drive, we controllably transfer a single excitation from the third level of the transmon to the resonator and shape the emitted photon. We reconstruct the density matrices of the created single-photon states and show that the photons are antibunched. We also create multipeaked photons with a controlled amplitude and phase. In contrast to similar existing schemes, the one we present here is based solely on microwave drives, enabling operation with fixed frequency transmons.

Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns

International Nuclear Information System (INIS)

Zhou Xun; Luo Zi-Jiang; Guo Xiang; Zhang Bi-Chan; Shang Lin-Tao; Zhou Qing; Deng Chao-Yong; Ding Zhao

2012-01-01

Surface segregation is studied via the evolution of reflection high-energy electron diffraction (RHEED) patterns under different values of As 4 BEP for InGaAs films. When the As 4 BEP is set to be zero, the RHEED pattern keeps a 4×3/(n × 3) structure with increasing temperature, and surface segregation takes place until 470 °C. The RHEED pattern develops into a metal-rich (4 × 2) structure as temperature increases to 495 °C. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515 °C, the RHEED pattern turns into a GaAs(2 × 4) structure due to In desorption. While the As 4 BEP comes up to a specific value (1.33 × 10 -4 Pa−1.33 × 10 -3 Pa), the surface temperature can delay the segregation and desorption. We find that As 4 BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption. (condensed matter: structural, mechanical, and thermal properties)

Fluorescence single-molecule counting assays for protein quantification using epi-fluorescence microscopy with quantum dots labeling

International Nuclear Information System (INIS)

Jiang Dafeng; Liu Chunxia; Wang Lei; Jiang Wei

2010-01-01

A single-molecule counting approach for quantifying the antibody affixed to a surface using quantum dots and epi-fluorescence microscopy is presented. Modifying the glass substrates with carboxyl groups provides a hydrophilic surface that reacts with amine groups of an antibody to allow covalent immobilization of the antibody. Nonspecific adsorption of single molecules on the modified surfaces was first investigated. Then, quantum dots were employed to form complexes with surface-immobilized antibody molecules and used as fluorescent probes for single-molecule imaging. Epi-fluorescence microscopy was chosen as the tool for single-molecule fluorescence detection here. The generated fluorescence signals were taken by an electron multiplying charge-coupled device and were found to be proportional to the sample concentrations. Under optimal conditions, a linear response range of 5.0 x 10 -14 -3.0 x 10 -12 mol L -1 was obtained between the number of single molecules and sample concentration via a single-molecule counting approach.

Manipulating molecular quantum states with classical metal atom inputs: demonstration of a single molecule NOR logic gate.

Science.gov (United States)

Soe, We-Hyo; Manzano, Carlos; Renaud, Nicolas; de Mendoza, Paula; De Sarkar, Abir; Ample, Francisco; Hliwa, Mohamed; Echavarren, Antonio M; Chandrasekhar, Natarajan; Joachim, Christian

2011-02-22

Quantum states of a trinaphthylene molecule were manipulated by putting its naphthyl branches in contact with single Au atoms. One Au atom carries 1-bit of classical information input that is converted into quantum information throughout the molecule. The Au-trinaphthylene electronic interactions give rise to measurable energy shifts of the molecular electronic states demonstrating a NOR logic gate functionality. The NOR truth table of the single molecule logic gate was characterized by means of scanning tunnelling spectroscopy.

Subwavelength Gold Grating as Polarizers Integrated with InP-Based InGaAs Sensors.

Science.gov (United States)

Wang, Rui; Li, Tao; Shao, Xiumei; Li, Xue; Huang, Xiaqi; Shao, Jinhai; Chen, Yifang; Gong, Haimei

2015-07-08

There are currently growing needs for polarimetric imaging in infrared wavelengths for broad applications in bioscience, communications and agriculture, etc. Subwavelength metallic gratings are capable of separating transverse magnetic (TM) mode from transverse electric (TE) mode to form polarized light, offering a reliable approach for the detection in polarization way. This work aims to design and fabricate subwavelength gold gratings as polarizers for InP-based InGaAs sensors in 1.0-1.6 μm. The polarization capability of gold gratings on InP substrate with pitches in the range of 200-1200 nm (fixed duty cycle of 0.5) has been systematically studied by both theoretical modeling with a finite-difference time-domain (FDTD) simulator and spectral measurements. Gratings with 200 nm lines/space in 100-nm-thick gold have been fabricated by electron beam lithography (EBL). It was found that subwavelength gold gratings directly integrated on InP cannot be applied as good polarizers, because of the existence of SPP modes in the detection wavelengths. An effective solution has been found by sandwiching the Au/InP bilayer using a 200 nm SiO2 layer, leading to significant improvement in both TM transmission and extinction ratio. At 1.35 μm, the improvement factors are 8 and 10, respectively. Therefore, it is concluded that the Au/SiO2/InP trilayer should be a promising candidate of near-infrared polarizers for the InP-based InGaAs sensors.

Electronic properties of excited states in single InAs quantum dots; Elektronische Struktur angeregter Zustaende einzelner InAs-Quantenpunkte

Energy Technology Data Exchange (ETDEWEB)

Warming, Till

2009-02-20

The application of quantum-mechanical effects in semiconductor nanostructures enables the realization of novel opto-electronic devices. Examples are given by single-photon emitters and emitters of entangled photon pairs, both being essential for quantum cryptography, or for qubit systems as needed for quantum computing. InAs/GaAs quantum dots are one of the most promising candidates for such applications. A detailed knowledge of the electronic properties of quantum dots is a prerequisite for this development. The aim of this work is an experimental access to the detailed electronic structure of the excited states in single InAs/GaAs quantum dots including few-particle effects and in particular exchange interaction. The experimental approach is micro photoluminescence excitation spectroscopy ({mu}PLE). One of the main difficulties using {mu}PLE to probe single QDs is the unambiguous assignment of the observed resonances in the spectrum to specific transitions. By comparing micro photoluminescence ({mu}PL) and {mu}PLE spectra, the identification of the main resonances becomes possible. The key is given by the fine structure of the hot trion. Excitation spectroscopy on single charged QDs enables for the first time the complete observation of a non-trivial fine structure of an excitonic complex in a QD, the hot trion. Modelling based on eight-band k.p theory in combination with a configuration interaction scheme is in excellent agreement. Therewith the simulation also enables realistic predictions on the fine structure of the ground-state exciton which is of large importance for single quantum dot devices. Theory concludes from the observed transitions that the structural symmetry of the QDs is broken. Micro photoluminescence excitation spectroscopy combined with resonantly excited micro photoluminescence enables an optical access to the single particle states of the hole without the influence of few-particle coulomb interactions. Based on this knowledge the exciton

Modeling satellite-Earth quantum channel downlinks with adaptive-optics coupling to single-mode fibers

Science.gov (United States)

Gruneisen, Mark T.; Flanagan, Michael B.; Sickmiller, Brett A.

2017-12-01

The efficient coupling of photons from a free-space quantum channel into a single-mode optical fiber (SMF) has important implications for quantum network concepts involving SMF interfaces to quantum detectors, atomic systems, integrated photonics, and direct coupling to a fiber network. Propagation through atmospheric turbulence, however, leads to wavefront errors that degrade mode matching with SMFs. In a free-space quantum channel, this leads to photon losses in proportion to the severity of the aberration. This is particularly problematic for satellite-Earth quantum channels, where atmospheric turbulence can lead to significant wavefront errors. This report considers propagation from low-Earth orbit to a terrestrial ground station and evaluates the efficiency with which photons couple either through a circular field stop or into an SMF situated in the focal plane of the optical receiver. The effects of atmospheric turbulence on the quantum channel are calculated numerically and quantified through the quantum bit error rate and secure key generation rates in a decoy-state BB84 protocol. Numerical simulations include the statistical nature of Kolmogorov turbulence, sky radiance, and an adaptive-optics system under closed-loop control.

Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang; Li, Guoqiang

2014-01-01

High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In x Ga 1−x As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In x Ga 1−x As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In x Ga 1−x As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In x Ga 1−x As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In x Ga 1−x As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In x Ga 1−x As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates

Experimentally measuring a quantum state by the Heisenberg exchange interaction in a single apparatus

International Nuclear Information System (INIS)

Peng Xinhua; Du Jiangfeng; Suter, D.

2005-01-01

Full text: Quantum information processing requires the effective measurement of quantum states. An important method, called quantum state tomography, needs measuring a complete set of observables on the measured system to determine its unknown quantum state ρ. The measurement involves certain noncommuting observables as a result of Bohr's complementarity. Very recently, Allahverdyan et al. proposed a new method in which the unknown quantum state r is determined by measuring a set of commuting observables in the price of a controlled interaction with an auxiliary system. If both systems S and A are spins, their z components (σ z ) can be chosen to measure after some specific Heisenberg exchange interaction. We study in detail a general Heisenberg XYZ model for a two-qubit system and present two classes of special Heisenberg interactions which can serve as the controlled interaction in Allahverdyan's scheme when the state of the auxiliary system A is initially completely disordered. Using the nuclear magnetic resonance techniques, the measurement scheme in a single apparatus has been experimentally demonstrated by designing the quantum circuit to simulate the Heisenberg exchange interaction. (author)

Quantum sensing of the phase-space-displacement parameters using a single trapped ion

Science.gov (United States)

Ivanov, Peter A.; Vitanov, Nikolay V.

2018-03-01

We introduce a quantum sensing protocol for detecting the parameters characterizing the phase-space displacement by using a single trapped ion as a quantum probe. We show that, thanks to the laser-induced coupling between the ion's internal states and the motion mode, the estimation of the two conjugated parameters describing the displacement can be efficiently performed by a set of measurements of the atomic state populations. Furthermore, we introduce a three-parameter protocol capable of detecting the magnitude, the transverse direction, and the phase of the displacement. We characterize the uncertainty of the two- and three-parameter problems in terms of the Fisher information and show that state projective measurement saturates the fundamental quantum Cramér-Rao bound.

Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well

DEFF Research Database (Denmark)

Hickey, M.C.; Damsgaard, Christian Danvad; Farrer, I

2005-01-01

Electrical spin injection in a narrow [100] In0.2Ga0.8As quantum well in a GaAs p-i-n optical device is reported. The quantum well is located 300 nm from an AlGaAs Schottky barrier and this system is used to compare the efficiencies and temperature dependences of spin injection from Fe and the He...

Effect of temperature and phonons on the spectral properties of a multi-level semiconductor quantum dot single-photon source

DEFF Research Database (Denmark)

Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, Peter

2009-01-01

Since it was realized that efficient quantum computing can be performed using single photons and standard linear optics elements, immense international research activity has been aimed at developing semiconductor quantum dot (QD) single-photon sources (SPS). In order to optimise the design of SPS...... us to study complicated multi-level QDs, not possible within the commonly used independent boson model (IBM)....

Spiking neuron devices consisting of single-flux-quantum circuits

International Nuclear Information System (INIS)

Hirose, Tetsuya; Asai, Tetsuya; Amemiya, Yoshihito

2006-01-01

Single-flux-quantum (SFQ) circuits can be used for making spiking neuron devices, which are useful elements for constructing intelligent, brain-like computers. The device we propose is based on the leaky integrate-and-fire neuron (IFN) model and uses a SFQ pulse as an action signal or a spike of neurons. The operation of the neuron device is confirmed by computer simulator. It can operate with a short delay of 100 ps or less and is the highest-speed neuron device ever reported

Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

Energy Technology Data Exchange (ETDEWEB)

Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire; Sagnes, Isabelle; Raj, Rama [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Lenglé, Kevin; Gay, Mathilde; Bramerie, Laurent [Université Européenne de Bretagne (UEB), 5 Boulevard Laënnec, 35000 Rennes (France); CNRS-Foton Laboratory (UMR 6082), Enssat, BP 80518, 22305 Lannion Cedex (France); Braive, Rémy; Raineri, Fabrice, E-mail: fabrice.raineri@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Université Paris Diderot, Sorbonne Paris Cité, 75207 Paris Cedex 13 (France)

2014-01-06

Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

Simplifying the complex 1H NMR spectra of fluorine-substituted benzamides by spin system filtering and spin-state selection: multiple-quantum-single-quantum correlation.

Science.gov (United States)

Baishya, Bikash; Reddy, G N Manjunatha; Prabhu, Uday Ramesh; Row, T N Guru; Suryaprakash, N

2008-10-23

The proton NMR spectra of fluorine-substituted benzamides are very complex (Figure 1) due to severe overlap of (1)H resonances from the two aromatic rings, in addition to several short and long-range scalar couplings experienced by each proton. With no detectable scalar couplings between the inter-ring spins, the (1)H NMR spectra can be construed as an overlap of spectra from two independent phenyl rings. In the present study we demonstrate that it is possible to separate the individual spectrum for each aromatic ring by spin system filtering employing the multiple-quantum-single-quantum correlation methodology. Furthermore, the two spin states of fluorine are utilized to simplify the spectrum corresponding to each phenyl ring by the spin-state selection. The demonstrated technique reduces spectral complexity by a factor of 4, in addition to permitting the determination of long-range couplings of less than 0.2 Hz and the relative signs of heteronuclear couplings. The technique also aids the judicious choice of the spin-selective double-quantum-single-quantum J-resolved experiment to determine the long-range homonuclear couplings of smaller magnitudes.

Electrical control of spontaneous emission and strong coupling for a single quantum dot

DEFF Research Database (Denmark)

Laucht, A.; Hofbauer, F.; Hauke, N.

2009-01-01

We report the design, fabrication and optical investigation of electrically tunable single quantum dots—photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light–matter interaction. Unlike previous studies where the dot–cavity spectral detuning...... switchable optical nonlinearity at the single photon level, paving the way towards on-chip dot-based nano-photonic devices that can be integrated with passive optical components....

Influence of quantum dot labels on single molecule movement in the plasma membrane

DEFF Research Database (Denmark)

Clausen, Mathias P.; Lagerholm, B. Christoffer

2011-01-01

Single particle tracking results are very dependent on the probe that is used. In this study we have investigated the influence that functionalized quantum dots (QDs) have on the recorded movement in single molecule tracking experiments of plasma membrane species in live cells. Potential issues...... for simultaneous investigations of different plasma membrane species in order to discriminate the effect of the label from differences in movement of the target molecules....

Deterministic Generation of Quantum State Transfer Between Spatially Separated Single Molecule Magnets

International Nuclear Information System (INIS)

Song Peijun; Lue Xinyou; Huang Pei; Hao Xiangying; Yang Xiaoxue

2010-01-01

We propose a new scheme for realizing deterministic quantum state transfer (QST) between two spatially separated single molecule magnets (SMMs) with the framework of cavity quantum electrodynamics (QED). In the present scheme, two SMMs are trapped in two spatially separated optical cavities coupled by an optical fiber. Through strictly numerically simulating, we demonstrate that our scheme is robust with respect to the SMMs' spontaneous decay and fiber loss under the conditions of dispersive SMMs-field interaction and strong coupling of cavity fiber. In addition, we also discuss the influence of photon leakage out of cavities and show that our proposal is good enough to demonstrate the generation of QST with high fidelity utilizing the current experimental technology. The present investigation provides research opportunities for realizing QST between solid-state qubits and may result in a substantial impact on the progress of solid-state-based quantum communications network. (general)

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

Science.gov (United States)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

2015-05-01

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, Pmax was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

International Nuclear Information System (INIS)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

2015-01-01

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P max was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs

Quantum walks, quantum gates, and quantum computers

International Nuclear Information System (INIS)

Hines, Andrew P.; Stamp, P. C. E.

2007-01-01

The physics of quantum walks on graphs is formulated in Hamiltonian language, both for simple quantum walks and for composite walks, where extra discrete degrees of freedom live at each node of the graph. It is shown how to map between quantum walk Hamiltonians and Hamiltonians for qubit systems and quantum circuits; this is done for both single-excitation and multiexcitation encodings. Specific examples of spin chains, as well as static and dynamic systems of qubits, are mapped to quantum walks, and walks on hyperlattices and hypercubes are mapped to various gate systems. We also show how to map a quantum circuit performing the quantum Fourier transform, the key element of Shor's algorithm, to a quantum walk system doing the same. The results herein are an essential preliminary to a Hamiltonian formulation of quantum walks in which coupling to a dynamic quantum environment is included

Single-passage read-out of atomic quantum memory

DEFF Research Database (Denmark)

Fiurasek, J; Sherson, J; Opatrny, T

2005-01-01

Retrieving quantum information, collective atomic spin systems, quantum memory Udgivelsesdato: 17 Feb.......Retrieving quantum information, collective atomic spin systems, quantum memory Udgivelsesdato: 17 Feb....

Compact quantum dots for single-molecule imaging.