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Sample records for single hfo2 trapping

  1. Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

    International Nuclear Information System (INIS)

    Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

    2011-01-01

    This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO 2 /Ta 2 O 5 charge-trapping layer. In comparison to a memory capacitor with a single HfO 2 trapping layer, the erase speed of a memory capacitor with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔV FB = 4 V, the device with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO 2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application

  2. Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

    2016-01-01

    Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

  3. Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

    International Nuclear Information System (INIS)

    Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

    2014-01-01

    In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

  4. MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

    International Nuclear Information System (INIS)

    Molina, Joel; Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso

    2012-01-01

    Highlights: ► HfO 2 nanoparticles used as charge trapping layer in MOHOS memory devices. ► Increasing HfO 2 nanoparticles concentration enhances charge injection and trapping. ► Enhancement of memory performance with low temperature annealing. ► Charge injection is done without using any hot-carrier injection mechanism. ► Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO 2 nanoparticles (np-HfO 2 ) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal–oxide–high-k–oxide–silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol–gel spin coating method after using different concentrations of np-HfO 2 and low temperature annealing (down to 425 °C) in order to obtain charge–retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO 2 concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO 2 as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  5. Effect of oxide charge trapping on x-ray photoelectron spectroscopy of HfO2/SiO2/Si structures

    International Nuclear Information System (INIS)

    Abe, Yasuhiro; Miyata, Noriyuki; Suzuki, Haruhiko; Kitamura, Koji; Igarashi, Satoru; Nohira, Hiroshi; Ikenaga, Eiji

    2009-01-01

    We examined the effects of interfacial SiO 2 layers and a surface metal layer on the photoelectron spectra of HfO 2 /SiO 2 /Si structures by hard X-ray photoemission spectroscopy with synchrotron radiation as well as conventional X-ray photoelectron spectroscopy (XPS). The Hf 4f and Hf 3d photoelectron peaks broadened and shifted toward a higher binding energy with increasing thickness of the interfacial SiO 2 layer, even though photoelectrons may have been emitted from the HfO 2 layer with the same chemical composition. Thinning the interfacial Si oxide layer to approximately one monolayer and depositing a metal layer on the HfO 2 surface suppressed these phenomena. The O 1s photoelectron spectra revealed marked differences between the metal- and nonmetal-deposited HfO 2 /SiO 2 /Si structures; HfO 2 and SiO 2 components in the O 1s photoelectron spectra for the metal-deposited structures were observed at reasonably separated binding energies, but those for the nonmetal-deposited structures were not separated clearly. From this behavior concerning the effects of interfacial SiO 2 and surface metal layers, we concluded that the Hf 4f, Hf 3d, and O 1s spectra measured from the HfO 2 /SiO 2 /Si structures did not reflect actual chemical bonding states. We consider that potential variations in the HfO 2 film owing to charge trapping strongly affect the measured photoelectron spectra. On the basis of angle-resolved XPS measurements, we propose that positive charges are trapped at the HfO 2 surface and negative charges are trapped inside the HfO 2 layer. (author)

  6. Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories

    Directory of Open Access Journals (Sweden)

    Nenad Novkovski

    2018-01-01

    Full Text Available Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented. By applying our previously developed comprehensive model for MOS structures containing high-κ dielectrics on the J-V characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V, several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted. We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer. C-V characteristics of stressed (with write and erase pulses structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur were used in order to provide measures of the effect of stresses with no influence of the measurement process. Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles. The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories.

  7. Ab initio study of the elastic properties of single and polycrystal TiO2, ZrO2 and HfO2 in the cotunnite structure

    International Nuclear Information System (INIS)

    Caravaca, M A; Mino, J C; Perez, V J; Casali, R A; Ponce, C A

    2009-01-01

    In this work, we study theoretically the elastic properties of the orthorhombic (Pnma) high-pressure phase of IV-B group oxides: titania, zirconia and hafnia. By means of the self-consistent SIESTA code, pseudopotentials, density functional theory in the LDA and GGA approximations, the total energies, hydrostatic pressures and stress tensor components are calculated. From the stress-strain relationships, in the linear regime, the elastic constants C ij are determined. Derived elastic constants, such as bulk, Young's and shear modulus, Poisson coefficient and brittle/ductile behavior are estimated with the polycrystalline approach, using Voigt-Reuss-Hill theories. We have found that C 11 , C 22 and C 33 elastic constants of hafnia and zirconia show increased strength with respect to the experimental values of the normal phase, P 2 1 /c. A similar situation applies to titania if these constants are compared with its normal phase, rutile. However, shear elastic constants C 44 , C 55 and C 66 are similar to the values found in the normal phase. This fact increases the compound anisotropy as well as its ductile behavior. The dependence of unit-cell volumes under hydrostatic pressures is also analyzed. P-V data, fitted to third-order Birch-Murnaghan equations of state, provide the bulk modulus B 0 and its pressure derivatives B' 0 . In this case, LDA estimations show good agreement with respect to recent measured bulk moduli of ZrO 2 and HfO 2 . Thermo-acoustic properties, e.g. the propagation speed of transverse, longitudinal elastic waves together with associated Debye temperatures, are also estimated.

  8. Mechanisms and selectivity for etching of HfO2 and Si in BCl3 plasmas

    International Nuclear Information System (INIS)

    Wang Chunyu; Donnelly, Vincent M.

    2008-01-01

    The authors have investigated plasma etching of HfO 2 , a high dielectric constant material, and poly-Si in BCl 3 plasmas. Etching rates were measured as a function of substrate temperature (T s ) at several source powers. Activation energies range from 0.2 to 1.0 kcal/mol for HfO 2 and from 0.8 to 1.8 kcal/mol for Si, with little or no dependence on source power (20-200 W). These low activation energies suggest that product removal is limited by chemical sputtering of the chemisorbed Hf or Si-containing layer, with a higher T s only modestly increasing the chemical sputtering rate. The slightly lower activation energy for HfO 2 results in a small improvement in selectivity over Si at low temperature. The surface layers formed on HfO 2 and Si after etching in BCl 3 plasmas were also investigated by vacuum-transfer x-ray photoelectron spectroscopy. A thin boron-containing layer was observed on partially etched HfO 2 and on poly-Si after etching through HfO 2 films. For HfO 2 , a single B(1s) feature at 194 eV was ascribed to a heavily oxidized species with bonding similar to B 2 O 3 . B(1s) features were observed for poly-Si surfaces at 187.6 eV (B bound to Si), 189.8 eV, and 193 eV (both ascribed to BO x Cl y ). In the presence of a deliberately added 0.5% air, the B-containing layer on HfO 2 is largely unaffected, while that on Si converts to a thick layer with a single B(1s) peak at 194 eV and an approximate stoichiometry of B 3 O 4 Cl

  9. Thermoluminescence in films of HfO2:Dy+3

    International Nuclear Information System (INIS)

    Ceron, P.; Rivera, T.; Guzman, J.; Montes, E.; Pelaez, A.; Rojas, B.; Guzman, D.; Azorin, J.; Paredes, L.

    2014-08-01

    In this work the thermoluminescence (TL) response of films of hafnium oxide polluted with dysprosium (HfO 2 :Dy +3 ) that were irradiated in the near UV (200 nm - 400 nm). The films were deposited by means of the ultrasonics spray pyrolysis technique on a glass substrate, using different deposit temperatures (300 grades C - 600 grades C). The best TL emission corresponded to the prepared film to 450 grades C that was exposed to a spectral irradiation of 80 μJ/(cm 2 -s) with a wave longitude of 240 nm. The TL response in function of the spectral irradiation was lineal in the studied interval (24 to 288 mJ/cm 2 ), several kinetic parameters were also calculated of the shine curve as depth of the trap (E), frequency factor (s) and order to the kinetics (b). The obtained results show that the films of HfO 2 :Dy +3 could be used as radiation monitor in the region of the near UV. (Author)

  10. Pressure-induced phase transformation of HfO2

    International Nuclear Information System (INIS)

    Arashi, H.

    1992-01-01

    This paper reports on the pressure dependence of the Raman spectra of HfO 2 that was measured by a micro-Raman technique using a single-crystal specimen in the pressure range from 0 to 10 GPa at room temperature. The symmetry assignment of Raman bands of the monoclinic phase was experimentally accomplished from the polarization measurements for the single crystal. With increased pressure, a phase transformation for the monoclinic phase took place at 4.3 ± 0.3 GPa. Nineteen Raman bands were observed for the high-pressure phase. The spectral structure of the Raman bands for the high-pressure phase was similar with those reported previously for ZrO 2 . The space group for the high pressure phase of HfO 2 was determined as Pbcm, which was the same as that of the high-pressure phase for ZrO 2 on the basis of the number and the spectral structure of the Raman bands

  11. Solid phase crystallisation of HfO2 thin films

    International Nuclear Information System (INIS)

    Modreanu, M.; Sancho-Parramon, J.; O'Connell, D.; Justice, J.; Durand, O.; Servet, B.

    2005-01-01

    In this paper, we report on the solid phase crystallisation of carbon-free HfO 2 thin films deposited by plasma ion assisted deposition (PIAD). After deposition, the HfO 2 films were annealed in N 2 ambient for 3 h at 350, 550 and 750 deg. C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and atomic force microscopy (AFM) were used for the physical characterisation of as-deposited and annealed HfO 2 . XRD has revealed that the as-deposited HfO 2 film is in an amorphous-like state with only traces of crystalline phase and that the annealed films are in a highly crystalline state. These results are in good agreement with the SE results showing an increase of refractive index by increasing the annealing temperature. XRR results show a significant density gradient over the as-deposited film thickness, which is characteristic of the PIAD method. The AFM measurements show that the HfO 2 layers have a smooth surface even after annealing at 750 deg. C. The present study demonstrates that the solid phase crystallisation of HfO 2 PIAD thin films starts at a temperature as low as 550 deg. C

  12. Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

    International Nuclear Information System (INIS)

    Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

    2006-01-01

    Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

  13. Formation and disruption of conductive filaments in a HfO2/TiN structure

    International Nuclear Information System (INIS)

    Brivio, S; Tallarida, G; Cianci, E; Spiga, S

    2014-01-01

    The process of the formation and disruption of nanometric conductive filaments in a HfO 2 /TiN structure is investigated by conductive atomic force microscopy. The preforming state evidences nonhomogeneous conduction at high fields through conductive paths, which are associated with pre-existing defects and develop into conductive filaments with a forming procedure. The disruption of the same filaments is demonstrated as well, according to a bipolar operation. In addition, the conductive tip of the microscopy is exploited to perform electrical operations on single conductive spots, which evidences that neighboring conductive filaments are not electrically independent. We propose a picture that describes the evolution of the shape of the conductive filaments in the processes of their formation and disruption, which involves the development of conductive branches from a common root; this root resides in the pre-existing defects that lay at the HfO 2 /TiN interface. (paper)

  14. Characteristics of trapped electrons and electron traps in single crystals

    International Nuclear Information System (INIS)

    Budzinski, E.E.; Potter, W.R.; Potienko, G.; Box, H.C.

    1979-01-01

    Two additional carbohydrates are reported whose crystal structures trap electrons intermolecularly in single crystals x irradiated at low temperature, namely sucrose and rhamnose. Five carbohydrate and polyhydroxy compounds are now known which exhibit this phenomenon. The following characteristics of the phenomenon were investigated: (1) the hyperfine couplings of the electron with protons of the polarized hydroxy groups forming the trap; (2) the distances between these protons and the trapped electron; (3) the spin density of the electron at the protons and (4) the relative stabilities of the electron trapped in various crystal structures

  15. Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

    Science.gov (United States)

    Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

    2014-03-26

    We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

  16. Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

    Directory of Open Access Journals (Sweden)

    Chin-Sheng Pang

    2014-04-01

    Full Text Available In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S, Al/HfO2/SiO2/Si (H, and Al/3HfO2/SiO2/Si (3H were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer, which leads to larger numbers of carriers crowded through the sweep of VG before the domination of tunneling current. Additionally, the HfO2 dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e−-h+ pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO2 stacking layers are importance to MOS(p tunneling photo diodes.

  17. Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

    Science.gov (United States)

    Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

    2017-05-24

    The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

  18. Single-molecule dynamics in nanofabricated traps

    Science.gov (United States)

    Cohen, Adam

    2009-03-01

    The Anti-Brownian Electrokinetic trap (ABEL trap) provides a means to immobilize a single fluorescent molecule in solution, without surface attachment chemistry. The ABEL trap works by tracking the Brownian motion of a single molecule, and applying feedback electric fields to induce an electrokinetic motion that approximately cancels the Brownian motion. We present a new design for the ABEL trap that allows smaller molecules to be trapped and more information to be extracted from the dynamics of a single molecule than was previously possible. In particular, we present strategies for extracting dynamically fluctuating mobilities and diffusion coefficients, as a means to probe dynamic changes in molecular charge and shape. If one trapped molecule is good, many trapped molecules are better. An array of single molecules in solution, each immobilized without surface attachment chemistry, provides an ideal test-bed for single-molecule analyses of intramolecular dynamics and intermolecular interactions. We present a technology for creating such an array, using a fused silica plate with nanofabricated dimples and a removable cover for sealing single molecules within the dimples. With this device one can watch the shape fluctuations of single molecules of DNA or study cooperative interactions in weakly associating protein complexes.

  19. Nanopore fabricated in pyramidal HfO2 film by dielectric breakdown method

    Science.gov (United States)

    Wang, Yifan; Chen, Qi; Deng, Tao; Liu, Zewen

    2017-10-01

    The dielectric breakdown method provides an innovative solution to fabricate solid-state nanopores on insulating films. A nanopore generation event via this method is considered to be caused by random charged traps (i.e., structural defects) and high electric fields in the membrane. Thus, the position and number of nanopores on planar films prepared by the dielectric breakdown method is hard to control. In this paper, we propose to fabricate nanopores on pyramidal HfO2 films (10-nm and 15-nm-thick) to improve the ability to control the location and number during the fabrication process. Since the electric field intensity gets enhanced at the corners of the pyramid-shaped film, the probability of nanopore occurrence at vertex and edge areas increases. This priority of appearance provides us chance to control the location and number of nanopores by monitoring a sudden irreversible discrete increase in current. The experimental results showed that the probability of nanopore occurrence decreases in an order from the vertex area, the edge area to the side face area. The sizes of nanopores ranging from 30 nm to 10 nm were obtained. Nanopores fabricated on the pyramid-shaped HfO2 film also showed an obvious ion current rectification characteristic, which might improve the nanopore performance as a biomolecule sequencing platform.

  20. Study of Direct-Contact HfO2/Si Interfaces

    Directory of Open Access Journals (Sweden)

    Noriyuki Miyata

    2012-03-01

    Full Text Available Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs.

  1. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

    Science.gov (United States)

    Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

    2018-01-01

    In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

  2. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2018-05-01

    Full Text Available In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment to 54.6 cm2/V∙s (with CF4 plasma treatment, which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability.

  3. Suspended HfO2 photonic crystal slab on III-nitride/Si platform

    International Nuclear Information System (INIS)

    Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

    2014-01-01

    We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

  4. Study of bulk Hafnium oxide (HfO2) under compression

    Science.gov (United States)

    Pathak, Santanu; Mandal, Guruprasad; Das, Parnika

    2018-04-01

    Hafnium oxide (HfO2) is a technologically important material. This material has K-value of 25 and band gap 5.8 eV. A k value of 25-30 is preferred for a gate dielectric [1]. As it shows good insulating and capacitive properties, HfO2 is being considered as a replacement to SiO2 in microelectronic devices as gate dielectrics. On the other hand because of toughening mechanism due to phase transformation induced by stress field observed in these oxides, HFO2 has been a material of investigations in various configurations for a very long time. However the controversies about phase transition of HfO2 under pressure still exists. High quality synchrotron radiation has been used to study the structural phase transition of HfO2 under pressure.

  5. Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

    2012-01-01

    Highlights: ► Nano-mechanical properties on annealed ultra-thin HfO 2 film are studied. ► By AFM analysis, hardness of the crystallized HfO 2 film significantly increases. ► By nano-indention, the film hardness increases with less contact stiffness. ► Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO 2 ) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO 2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO 2 films deposited on silicon wafers (HfO 2 /SiO 2 /Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO 2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO 2 phases for the atomic layer deposited HfO 2 . The HfSi x O y complex formed at the interface between HfO 2 and SiO 2 /Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO 2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO 2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO 2 films on SiO 2 /Si substrates.

  6. Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

    Science.gov (United States)

    García, H.; González, M. B.; Mallol, M. M.; Castán, H.; Dueñas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigón, A.

    2018-04-01

    The γ-radiation effects on the electrical characteristics of metal-insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole-Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.

  7. Chemical reaction at the interface between pentacene and HfO2

    International Nuclear Information System (INIS)

    Kang, S.J.; Yi, Y.; Kim, K.H.; Yoo, C.Y.; Moewes, A.; Cho, M.H.; Denlinger, J.D.; Whang, C.N.; Chang, G.S.

    2005-01-01

    The electronic structure and the interface formation at the interface region between pentacene and HfO2 are investigated using x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and x-ray emission spectroscopy (XES). The measured C 1s XPS spectra of pentacene indicate that chemical bonding occurs at the interface between pentacene and HfO2. The carbon of pentacene reacts with oxygen belonging to HfO2 and band bending occurs at the interface due to a redistribution of charge. The determined interface dipole and band bending between pentacene and HfO2 are 0.04 and 0.1 eV, respectively. The highest occupied molecular orbital (HOMO) level is observed at 0.68 eV below the Fermi level. This chemical reaction allows us to grow a pentacene film with large grains onto HfO2. We conclude that high performance pentacene thin film transistors can be obtained by inserting an ultrathin HfO2 layer between pentacene and a gate insulator

  8. Single qubit manipulation in a microfabricated surface electrode ion trap

    Science.gov (United States)

    Mount, Emily; Baek, So-Young; Blain, Matthew; Stick, Daniel; Gaultney, Daniel; Crain, Stephen; Noek, Rachel; Kim, Taehyun; Maunz, Peter; Kim, Jungsang

    2013-09-01

    We trap individual 171Yb+ ions in a surface trap microfabricated on a silicon substrate, and demonstrate a complete set of high fidelity single qubit operations for the hyperfine qubit. Trapping times exceeding 20 min without laser cooling, and heating rates as low as 0.8 quanta ms-1, indicate stable trapping conditions in these microtraps. A coherence time of more than 1 s, high fidelity qubit state detection and single qubit rotations are demonstrated. The observation of low heating rates and demonstration of high quality single qubit gates at room temperature are critical steps toward scalable quantum information processing in microfabricated surface traps.

  9. Single qubit manipulation in a microfabricated surface electrode ion trap

    International Nuclear Information System (INIS)

    Mount, Emily; Baek, So-Young; Gaultney, Daniel; Crain, Stephen; Noek, Rachel; Kim, Taehyun; Maunz, Peter; Kim, Jungsang; Blain, Matthew; Stick, Daniel

    2013-01-01

    We trap individual 171 Yb + ions in a surface trap microfabricated on a silicon substrate, and demonstrate a complete set of high fidelity single qubit operations for the hyperfine qubit. Trapping times exceeding 20 min without laser cooling, and heating rates as low as 0.8 quanta ms −1 , indicate stable trapping conditions in these microtraps. A coherence time of more than 1 s, high fidelity qubit state detection and single qubit rotations are demonstrated. The observation of low heating rates and demonstration of high quality single qubit gates at room temperature are critical steps toward scalable quantum information processing in microfabricated surface traps. (paper)

  10. Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

    Science.gov (United States)

    Zhang, Hongpeng; Jia, Renxu; Lei, Yuan; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming

    2018-02-01

    In this paper, current conduction mechanisms in HfO2/β-Ga2O3 metal-oxide-semiconductor (MOS) capacitors under positive and negative biases are investigated using the current-voltage (I-V) measurements conducted at temperatures from 298 K to 378 K. The Schottky emission is dominant under positively biased electric fields of 0.37-2.19 MV cm-1, and the extracted Schottky barrier height ranged from 0.88 eV to 0.91 eV at various temperatures. The Poole-Frenkel emission dominates under negatively biased fields of 1.92-4.83 MV cm-1, and the trap energy levels are from 0.71 eV to 0.77 eV at various temperatures. The conduction band offset (ΔE c) of HfO2/β-Ga2O3 is extracted to be 1.31  ±  0.05 eV via x-ray photoelectron spectroscopy, while a large negative sheet charge density of 1.04  ×  1013 cm-2 is induced at the oxide layer and/or HfO2/β-Ga2O3 interface. A low C-V hysteresis of 0.76 V, low interface state density (D it) close to 1  ×  1012 eV-1 cm-2, and low leakage current density of 2.38  ×  10-5 A cm-2 at a gate voltage of 7 V has been obtained, suggesting the great electrical properties of HfO2/β-Ga2O3 MOSCAP. According to the above analysis, ALD-HfO2 is an attractive candidate for high voltage β-Ga2O3 power devices.

  11. Structural, morphological, optical and photoluminescence properties of HfO2 thin films

    International Nuclear Information System (INIS)

    Ma, C.Y.; Wang, W.J.; Wang, J.; Miao, C.Y.; Li, S.L.; Zhang, Q.Y.

    2013-01-01

    Nanocrystalline monoclinic HfO 2 films with an average crystal size of 4.2–14.8 nm were sputter deposited under controlled temperatures and their structural characteristics and optical and photoluminescence properties have been evaluated. Structural investigations indicate that monoclinic HfO 2 films grown at higher temperatures above 400 °C are highly oriented along the (− 111) direction. The lattice expansion increases with diminishing HfO 2 crystalline size below 6.8 nm while maximum lattice expansion occurs with highly oriented monoclinic HfO 2 of crystalline size about 14.8 nm. The analysis of atomic force microscopy shows that the film growth at 600 °C can be attributed to the surface-diffusion-dominated growth. The intensity of the shoulderlike band that initiates at ∼ 5.7 eV and saturates at 5.94 eV shows continued increase with increasing crystalline size, which is intrinsic to nanocrystalline monoclinic HfO 2 films. Optical band gap varies in the range 5.40 ± 0.03–5.60 ± 0.03 eV and is slightly decreased with the increase in crystalline size. The luminescence band at 4.0 eV of HfO 2 films grown at room temperature can be ascribed to the vibronic transition of excited OH · radical while the emission at 3.2–3.3 eV for the films grown at all temperatures was attributed to the radiative recombination at impurity and/or defect centers. - Highlights: • Nanocrystalline monoclinic HfO 2 films were sputter deposited. • Structural, optical and photoluminescence properties were studied. • To analyze the scaling behavior using the power spectral density • Optical and photoluminescence properties strongly depend on film growth temperature

  12. High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

    International Nuclear Information System (INIS)

    Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

    2014-01-01

    We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO 2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm 2 /V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO 2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor

  13. Parameter Screening in Microfluidics Based Hydrodynamic Single-Cell Trapping

    Directory of Open Access Journals (Sweden)

    B. Deng

    2014-01-01

    Full Text Available Microfluidic cell-based arraying technology is widely used in the field of single-cell analysis. However, among developed devices, there is a compromise between cellular loading efficiencies and trapped cell densities, which deserves further analysis and optimization. To address this issue, the cell trapping efficiency of a microfluidic device with two parallel micro channels interconnected with cellular trapping sites was studied in this paper. By regulating channel inlet and outlet status, the microfluidic trapping structure can mimic key functioning units of previously reported devices. Numerical simulations were used to model this cellular trapping structure, quantifying the effects of channel on/off status and trapping structure geometries on the cellular trapping efficiency. Furthermore, the microfluidic device was fabricated based on conventional microfabrication and the cellular trapping efficiency was quantified in experiments. Experimental results showed that, besides geometry parameters, cellular travelling velocities and sizes also affected the single-cell trapping efficiency. By fine tuning parameters, more than 95% of trapping sites were taken by individual cells. This study may lay foundation in further studies of single-cell positioning in microfluidics and push forward the study of single-cell analysis.

  14. Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation

    Science.gov (United States)

    Ye, Li; Tingting, Jiang; Qingqing, Sun; Pengfei, Wang; Shijin, Ding; Wei, Zhang

    2012-03-01

    HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N(C2H5)(CH3)]4 and H2O2. A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing. The composition, the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment. With a nitrogen concentration increase from 1.41 to 7.45%, the bandgap of the films decreased from 5.82 to 4.94 eV.

  15. Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100)

    Science.gov (United States)

    Soares, G. V.; Feijó, T. O.; Baumvol, I. J. R.; Aguzzoli, C.; Krug, C.; Radtke, C.

    2014-01-01

    In the present work, we investigated the thermally-driven H incorporation in HfO2 films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO2/substrate interface region (at 300 °C) and through the whole HfO2 layer (400-600 °C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO2 films underwent structural changes during annealings, influencing D incorporation. The semiconductor substrate plays a key role in this process.

  16. SIMS study of oxygen diffusion in monoclinic HfO2

    Science.gov (United States)

    Mueller, Michael P.; De Souza, Roger A.

    2018-01-01

    The diffusion of oxygen in dense ceramics of monoclinic HfO2 was studied by means of (18O/16O) isotope exchange annealing and subsequent determination of isotope depth profiles by Secondary Ion Mass Spectrometry. Anneals were performed in the temperature range of 573 ≤T /K ≤ 973 at an oxygen partial pressure of p O2=200 mbar . All measured isotope profiles exhibited two features: the first feature, closer to the surface, was attributed mainly to slow oxygen diffusion in an impurity silicate phase; the second feature, deeper in the sample, was attributed to oxygen diffusion in bulk monoclinic HfO2 . The activation enthalpy of oxygen tracer diffusion in bulk HfO2 was found to be ΔHD∗≈0.5 eV .

  17. Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

    Science.gov (United States)

    Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.

    2017-10-01

    A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 109 cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (Vo +) which limit electron movement through the switching layer.

  18. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

    Science.gov (United States)

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-13

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

  19. Crystal structure and band gap determination of HfO2 thin films

    NARCIS (Netherlands)

    Cheynet, M.C.; Pokrant, S.; Tichelaar, F.D.; Rouvière, J.L.

    2007-01-01

    Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by

  20. Preparation and characterization of Ce-doped HfO2 nanoparticles

    International Nuclear Information System (INIS)

    Gálvez-Barboza, S.; González, L.A.; Puente-Urbina, B.A.; Saucedo-Salazar, E.M.; García-Cerda, L.A.

    2015-01-01

    Highlights: • Ce-doped HfO 2 nanoparticles were prepared by a modified solgel method. • Ce-doped HfO 2 nanoparticles have a semispherical shape with sizes between 6 and 11.5 nm. • The samples doped with 10% in weight of Ce directly crystallized in a cubic structure. • A quick, straightforward and effective route for the preparation of Ce-doped nanoparticles. - Abstract: A modified solgel method to synthesize Ce-doped HfO 2 nanoparticles was carried out using a precursor material prepared with cerium nitrate, hafnium chloride, citric acid and ethylene glycol. The obtained precursor material was calcined at 500 and 700 °C for 2 h in air. The influence of the concentration of Ce and the calcination temperature was studied to observe the structural and morphological changes of the obtained materials. For the characterization, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman scattering (RS) were employed. The XRD patterns shown that the Ce-doped HfO 2 undergoes a structural transformation from monoclinic to cubic phase, which is significantly dependent on the Ce content and calcination temperature. TEM images have also confirmed the existence of semispherical nanoparticles with sizes between 6 and 11.5 nm

  1. Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Yong-Qing; Chang, Chia-Wei; Yao, Chih-Kai; Liao, Jiunn-Der

    2013-01-01

    10-nm-thick atomic layer deposited HfO 2 films were characterized in terms of wear resistance and indentation hardness to investigate the thermal annealing induced impacts on mechanical properties. The wear resistance of ultra-thin films at low loads was characterized using nano-scratch tests with an atomic force microscope. The depth of the nano-scratches decreases with increasing annealing temperature, indicating that the hardness of the annealed films increases with the annealing temperatures. Surface nanoindentation was also performed to confirm the nanoscratch test results. The hardness variation of the annealed films is due to the generation of HfSi x O y induced by the thermal annealing. X-ray photoelectron spectroscopy measurements proved that the hardness of formed HfSi x O y with increasing annealing temperatures. The existence of HfSi x O y broadens the interface, and causes the increase of the interfacial layer thickness. As a result, the surface hardness increases with the increasing HfSi x O y induced by the thermal annealing. - Highlights: ► Mechanical properties of HfO 2 films were assessed by nano-scratch and indentation. ► Scratch depth of HfO 2 films decreased with the increase of annealing temperatures. ► Nano-hardness of HfO 2 films increased with the increase of annealing temperatures

  2. Chemical states and electronic structure of a HfO(-2)/Ge(001) interface

    International Nuclear Information System (INIS)

    Seo, Kang-ill; McIntyre, Paul C.; Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; SLAC, SSRL; Saraswat, Krishna C.; Stanford U., Elect. Eng. Dept.

    2005-01-01

    We report the chemical bonding structure and valence band alignment at the HfO 2 /Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO 2 film using a dilute HF-solution. We found that a very non-stoichiometric GeO x layer exists at the HfO 2 /Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO x was determined to be ΔE v (Ge-GeO x ) = 2.2 ± 0.15 eV, and that between Ge and HfO 2 , ΔE v (Ge-HfO 2 ) = 2.7 ± 0.15 eV

  3. Thermal Conductivity and Water Vapor Stability of Ceramic HfO2-Based Coating Materials

    Science.gov (United States)

    Zhu, Dong-Ming; Fox, Dennis S.; Bansal, Narottam P.; Miller, Robert A.

    2004-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal/environmental barrier coating materials for gas turbine ceramic matrix composite (CMC) combustor liner applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature phase stability of plasma-sprayed coatings and/or hot-pressed HfO2-5mol%Y2O3, HfO2-15mol%Y2O3 and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasma-sprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC Hexoloy or CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications will also be discussed.

  4. Nanomechanical study of amorphous and polycrystalline ALD HfO2 thin films

    Science.gov (United States)

    K. Tapily; J.E. Jakes; D. Gu; H. Baumgart; A.A. Elmustafa

    2011-01-01

    Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO

  5. Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment

    International Nuclear Information System (INIS)

    Lai, C.S.; Wu, W.C.; Chao, T.S.; Chen, J.H.; Wang, J.C.; Tay, L.-L.; Rowell, Nelson

    2006-01-01

    In this letter, the effects of pre-CF 4 plasma treatment on Si for sputtered HfO 2 gate dielectrics are investigated. The significant fluorine was incorporated at the HfO 2 /Si substrate interface for a sample with the CF 4 plasma pretreatment. The Hf silicide was suppressed and Hf-F bonding was observed for the CF 4 plasma pretreated sample. Compared with the as-deposited sample, the effective oxide thickness was much reduced for the pre-CF 4 plasma treated sample due to the elimination of the interfacial layer between HfO 2 and Si substrate. These improved characteristics of the HfO 2 gate dielectrics can be explained in terms of the fluorine atoms blocking oxygen diffusion through the HfO 2 film into the Si substrate

  6. Single florescent nanodiamond in a three dimensional ABEL trap

    Science.gov (United States)

    Kayci, Metin; Radenovic, Aleksandra

    2015-01-01

    Three dimensional single particle trapping and manipulation is an outstanding challenge in various fields ranging from basic physics to life sciences. By monitoring the response of a trapped particle to a designed environment one can extract its characteristics. In addition, quantum dynamics of a spatially scanned well-known particle can provide environmental information. Precise tracking and positioning of such a particle in aqueous environment is crucial task for achieving nano-scale resolution. Here we experimentally demonstrate three dimensional ABEL trap operating at high frequency by employing a hybrid approach in particle tracking. The particle location in the transverse plane is detected via a scanning laser beam while the axial position is determined by defocused imaging. The scanning of the trapped particle is accomplished through a nano positioning stage integrated to the trap platform. PMID:26559890

  7. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

    Science.gov (United States)

    Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

    2018-01-01

    The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

  8. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  9. Issues concerning the determination of solubility products of sparingly soluble crystalline solids. Solubility of HfO2(cr)

    International Nuclear Information System (INIS)

    Rai, Dhanpat; Kitamura, Akira; Rosso, Kevin M.; Sasaki, Takayuki; Kobayashi, Taishi

    2016-01-01

    Solubility studies were conducted with HfO 2 (cr) solid as a function HCl and ionic strength ranging from 2.0 to 0.004 mol kg -1 . These studies involved (1) using two different amounts of the solid phase, (2) acid washing the bulk solid phase, (3) preheating the solid phase to 1400 C, and (4) heating amorphous HfO 2 (am) suspensions to 90 C to ascertain whether the HfO 2 (am) converts to HfO 2 (cr) and to determine the solubility from the oversaturation direction. Based on the results of these treatments it is concluded that the HfO 2 (cr) contains a small fraction of less crystalline, but not amorphous, material [HfO 2 (lcr)] and this, rather than the HfO 2 (cr), is the solubility-controlling phase in the range of experimental variables investigated in this study. The solubility data are interpreted using both the Pitzer and SIT models and they provide log 10 K 0 values of -(59.75±0.35) and -(59.48±0.41), respectively, for the solubility product of HfO 2 (lcr)[HfO 2 (lcr) + 2H 2 O ↔ Hf 4+ + 4OH - ]. The log 10 of the solubility product of HfO 2 (cr) is estimated to be < -63. The observation of a small fraction of less crystalline higher solubility material is consistent with the general picture that mineral surfaces are often structurally and/or compositionally imperfect leading to a higher solubility than the bulk crystalline solid. This study stresses the urgent need, during interpretation of solubility data, of taking precautions to make certain that the observed solubility behavior for sparingly-soluble solids is assigned to the proper solid phase.

  10. Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

    Science.gov (United States)

    Sales, T. S. N.; Cavalcante, F. H. M.; Bosch-Santos, B.; Pereira, L. F. D.; Cabrera-Pasca, G. A.; Freitas, R. S.; Saxena, R. N.; Carbonari, A. W.

    2017-05-01

    In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2) nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) with electron back scattering diffraction (EBSD), and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%).

  11. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    International Nuclear Information System (INIS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-01-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar + ion beam, we cleaned the polymer residue without damaging the graphene network. HfO 2 grown by atomic layer deposition on graphene cleaned using an Ar + ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar + ion cleaning) showed a non-uniform structure. A graphene–HfO 2 –metal capacitor fabricated by growing 20-nm thick HfO 2 on graphene exhibited a very low leakage current (<10 −11 A/cm 2 ) for Ar + ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  12. Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

    Directory of Open Access Journals (Sweden)

    T. S. N. Sales

    2017-05-01

    Full Text Available In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2 nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD, transmission electron microscopy (TEM and scanning electron microscopy (SEM with electron back scattering diffraction (EBSD, and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%.

  13. Characterization, integration and reliability of HfO2 and LaLuO3 high-κ/metal gate stacks for CMOS applications

    International Nuclear Information System (INIS)

    Nichau, Alexander

    2013-01-01

    . A lower limit found was EOT=5 Aa for Al doping inside TiN. The doping of TiN on LaLuO 3 is proven by electron energy loss spectroscopy (EELS) studies to modify the interfacial silicate layer to La-rich silicates or even reduce the layer. The oxide quality in Si/HfO 2 /TiN gate stacks is characterized by charge pumping and carrier mobility measurements on 3d MOSFETs a.k.a. FinFETs. The oxide quality in terms of the number of interface (and oxide) traps on top- and sidewall of FinFETs is compared for three different annealing processes. A high temperature anneal of HfO 2 improves significantly the oxide quality and mobility. The gate oxide integrity (GOI) of gate stacks below 1 nm EOT is determined by time-dependent dielectric breakdown (TDDB) measurements on FinFETs with HfO 2 /TiN gate stacks. A successful EOT scaling has always to consider the oxide quality and resulting reliability. Degraded oxide quality leads to mobility degradation and earlier soft-breakdown, i.e. leakage current increase.

  14. Field-enhanced route to generating anti-Frenkel pairs in HfO2

    Science.gov (United States)

    Schie, Marcel; Menzel, Stephan; Robertson, John; Waser, Rainer; De Souza, Roger A.

    2018-03-01

    The generation of anti-Frenkel pairs (oxygen vacancies and oxygen interstitials) in monoclinic and cubic HfO2 under an applied electric field is examined. A thermodynamic model is used to derive an expression for the critical field strength required to generate an anti-Frenkel pair. The critical field strength of EaFcr˜101GVm-1 obtained for HfO2 exceeds substantially the field strengths routinely employed in the forming and switching operations of resistive switching HfO2 devices, suggesting that field-enhanced defect generation is negligible. Atomistic simulations with molecular static (MS) and molecular dynamic (MD) approaches support this finding. The MS calculations indicated a high formation energy of Δ EaF≈8 eV for the infinitely separated anti-Frenkel pair, and only a decrease to Δ EaF≈6 eV for the adjacent anti-Frenkel pair. The MD simulations showed no defect generation in either phase for E <3 GVm-1 , and only sporadic defect generation in the monoclinic phase (at E =3 GVm-1 ) with fast (trec<4 ps ) recombination. At even higher E but below EaFcr both monoclinic and cubic structures became unstable as a result of field-induced deformation of the ionic potential wells. Further MD investigations starting with preexisting anti-Frenkel pairs revealed recombination of all pairs within trec<1 ps , even for the case of neutral vacancies and charged interstitials, for which formally there is no electrostatic attraction between the defects. In conclusion, we find no physically reasonable route to generating point-defects in HfO2 by an applied field.

  15. Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2

    Directory of Open Access Journals (Sweden)

    Gabriel González

    2015-01-01

    Full Text Available In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance of the interdigital capacitor was optimized by coating the electrodes with a 60 nm layer of HfO2. An analytical solution of the capacitance was compared to electromagnetic simulations using COMSOL and with experimental measurements. Results show that modeling interdigital capacitors using Finite Element Method software such as COMSOL is effective in the design and electrical characterization of these transducers.

  16. Thermal expansion studies on HfO2-Gd2O3 system

    International Nuclear Information System (INIS)

    Panneerselvam, G.; Antony, M.P.; Nagarajan, K.

    2014-01-01

    A series of solid solutions containing GdO 1.5 in HfO 2 , (Hf 1-y Gd y ) O 2 (y = 0.15, 0.2, 0.3, 0.41 and 0.505) were prepared by solid state method. Structural characterization and computation of lattice parameter was carried out using room temperature X-ray diffraction measurements

  17. Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

    Directory of Open Access Journals (Sweden)

    Yuehua Dai

    2016-08-01

    Full Text Available The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained.

  18. Characterization of luminescent samarium doped HfO2 coatings synthesized by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Chacon-Roa, C; Guzman-Mendoza, J; Aguilar-Frutis, M; Garcia-Hipolito, M; Alvarez-Fragoso, O; Falcony, C

    2008-01-01

    Trivalent samarium (Sm 3+ ) doped hafnium oxide (HfO 2 ) films were deposited using the spray pyrolysis deposition technique. The films were deposited on Corning glass substrates at temperatures ranging from 300 to 550 deg. C using chlorides as raw materials. Films, mostly amorphous, were obtained when deposition temperatures were below 350 deg. C. However, for temperatures higher than 400 deg. C, the films became polycrystalline, presenting the HfO 2 monoclinic phase. Scanning electron microscopy of the films revealed a rough surface morphology with spherical particles. Also, electron energy dispersive analysis was performed on these films. The photoluminescence and cathodoluminescence characteristics of the HfO 2 : SmCl 3 films, measured at room temperature, exhibited four main bands centred at 570, 610, 652 and 716 nm, which are due to the well-known intra-4f transitions of the Sm 3+ ion. It was found that the overall emission intensity rose as the deposition temperature was increased. Furthermore, a concentration quenching of the luminescence intensity was also observed

  19. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    International Nuclear Information System (INIS)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

    2015-01-01

    Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  20. Single Ion Trapping for the Enriched Xenon Observatory

    Energy Technology Data Exchange (ETDEWEB)

    Waldman, Samuel J.; /Stanford U., Phys. Dept. /SLAC

    2006-03-28

    In the last decade, a variety of neutrino oscillation experiments have established that there is a mass difference between neutrino flavors, without determining the absolute neutrino mass scale. The Enriched Xenon Observatory for neutrinoless double beta decay (EXO) will search for the rare decays of xenon to determine the absolute value of the neutrino mass. The experiment uses a novel technique to minimize backgrounds, identifying the decay daughter product in real time using single ion spectroscopy. Here, we describe single ion trapping and spectroscopy compatible with the EXO detector. We extend the technique of single ion trapping in ultrahigh vacuum to trapping in xenon gas. With this technique, EXO will achieve a neutrino mass sensitivity of {approx_equal} .010 eV.

  1. Trapped electrons in irradiated single crystals of polyhydroxy compounds

    International Nuclear Information System (INIS)

    Box, H.C.; Budzinski, E.E.; Freund, H.G.; Potter, W.R.

    1979-01-01

    The intermolecular trapping of electrons has been observed in single crystals of dulcitol and L(+) arabinose x-irradiated at 4.2 0 K. Attribution of a major component of the ESR absorption to trapped electrons is based upon the character of the hyperfine pattern, which arises from multiple anisotropic hyperfine interactions with exchangeable protons, and on the g value of the absorption, which is always less than the free spin value. The removal of the trapped electron absorption upon irradiation with visible light has also been demonstrated. In these experiments all of the electrons are trapped in identical sites. This circumstance provides some important advantages in the study of the factors affecting the stabilization of charge in an environment of polarizable molecules

  2. Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements

    Science.gov (United States)

    Manikanthababu, N.; Vajandar, S.; Arun, N.; Pathak, A. P.; Asokan, K.; Osipowicz, T.; Basu, T.; Nageswara Rao, S. V. S.

    2018-03-01

    In-situ I-V and C-V characterization studies were carried out to determine the device quality of atomic layer deposited HfO2 (2.7 nm)/SiO2 (0.6 nm)/Si-based metal oxide semiconductor devices during 120 MeV Ag ion irradiation. The influence of various tunneling mechanisms has been investigated by analyzing the I-V characteristics as a function of ion fluence. The nature of the defects created is tentatively identified by the determination of the significant tunneling processes. While the ion induced annealing of defects is observed at lower fluences, ion induced intermixing and radiation damage is found to be significant at higher fluences. The C-V characteristics also reveal significant changes at the interface and oxide trap densities: an increase in the oxide layer thickness occurs through the formation of an HfSiO interlayer. The interlayer is due to the swift heavy ion induced intermixing, which has been confirmed by X-TEM and X-ray photoelectron spectroscopy measurements.

  3. High-temperature x-ray diffraction study of HfTiO4-HfO2 solid solutions

    International Nuclear Information System (INIS)

    Carpenter, D.A.

    1975-01-01

    High-temperature x-ray diffraction techniques were used to determine the axial thermal expansion curves of HfTiO 4 -HfO 2 solid solutions as a function of composition. Data show increasing anisotropy with increasing HfO 2 content. An orthorhombic-to-monoclinic phase transformation was detected near room temperature for compositions near the high HfO 2 end of the orthorhombic phase field and for compositions within the two-phase region (HfTiO 4 solid solution plus HfO 2 solid solution). An orthorhombic-to-cubic phase transformation is indicated by data from oxygen-deficient materials at greater than 1873 0 K. (U.S.)

  4. Self-diffusion of Er and Hf inpure and HfO2-doped polycrystalline Er2O3

    International Nuclear Information System (INIS)

    Scheidecker, R.W.

    1979-01-01

    Using a tracer technique, self-diffusion of Er and Hf was measured over the approximate temperature interval of 1600 to 1970 0 C in pure and HfO 2 -doped polycryatalline Er 2 O 3 . Up to about 10 m/o HfO 2 dopant level, the Er self-diffusion coefficients followed a relationship based on cation vacancies. Above 10 m/o HfO 2 , deviation from this relationship occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnia ion. The activation energy for the self-diffusion of Er in pure Er 2 O 3 was 82.2 Kcal/mole and increased with the HfO 2 dopant level present. Self-diffusion of Hf was measured in pure Er 2 O 3 having two impurity levels, and a separation of the grain boundary. The volume diffusion of Hf showed both extrinsic and intrinsic behavior with the transition temperature increasing with the impurity level present in Er 2 O 3 . The activation energy for Hf volume diffusion in the intrinsic region was high, i.e. 235 -+ 9.5 Kcal/mole. The grain boundary diffusion was apparently extrinsic over the entire temperature interval Very low Hf self diffusion rates were found in both pure and HfO 2 doped Er 2 O 3 compositions. Despite a clustering effect, the HfO 2 dopant increased the Hf volume diffusion coefficients

  5. Construction of a single atom trap for quantum information protocols

    Science.gov (United States)

    Shea, Margaret E.; Baker, Paul M.; Gauthier, Daniel J.; Duke Physics Department Team

    2016-05-01

    The field of quantum information science addresses outstanding problems such as achieving fundamentally secure communication and solving computationally hard problems. Great progress has been made in the field, particularly using photons coupled to ions and super conducting qubits. Neutral atoms are also interesting for these applications and though the technology for control of neutrals lags behind that of trapped ions, they offer some key advantages: primarily coupling to optical frequencies closer to the telecom band than trapped ions or superconducting qubits. Here we report progress on constructing a single atom trap for 87 Rb. This system is a promising platform for studying the technical problems facing neutral atom quantum computing. For example, most protocols destroy the trap when reading out the neutral atom's state; we will investigate an alternative non-destructive state detection scheme. We detail the experimental systems involved and the challenges addressed in trapping a single atom. All of our hardware components are off the shelf and relatively inexpensive. Unlike many other systems, we place a high numerical aperture lens inside our vacuum system to increase photon collection efficiency. We gratefully acknowledge the financial support of the ARO through Grant # W911NF1520047.

  6. New apparatus of single particle trap system for aerosol visualization

    Science.gov (United States)

    Higashi, Hidenori; Fujioka, Tomomi; Endo, Tetsuo; Kitayama, Chiho; Seto, Takafumi; Otani, Yoshio

    2014-08-01

    Control of transport and deposition of charged aerosol particles is important in various manufacturing processes. Aerosol visualization is an effective method to directly observe light scattering signal from laser-irradiated single aerosol particle trapped in a visualization cell. New single particle trap system triggered by light scattering pulse signal was developed in this study. The performance of the device was evaluated experimentally. Experimental setup consisted of an aerosol generator, a differential mobility analyzer (DMA), an optical particle counter (OPC) and the single particle trap system. Polystylene latex standard (PSL) particles (0.5, 1.0 and 2.0 μm) were generated and classified according to the charge by the DMA. Singly charged 0.5 and 1.0 μm particles and doubly charged 2.0 μm particles were used as test particles. The single particle trap system was composed of a light scattering signal detector and a visualization cell. When the particle passed through the detector, trigger signal with a given delay time sent to the solenoid valves upstream and downstream of the visualization cell for trapping the particle in the visualization cell. The motion of particle in the visualization cell was monitored by CCD camera and the gravitational settling velocity and the electrostatic migration velocity were measured from the video image. The aerodynamic diameter obtained from the settling velocity was in good agreement with Stokes diameter calculated from the electrostatic migration velocity for individual particles. It was also found that the aerodynamic diameter obtained from the settling velocity was a one-to-one function of the scattered light intensity of individual particles. The applicability of this system will be discussed.

  7. Observation of Spin Flips with a Single Trapped Proton

    CERN Document Server

    Ulmer, S.; Blaum, K.; Kracke, H.; Mooser, A.; Quint, W.; Walz, J.

    2011-01-01

    Spin transitions of an isolated trapped proton are observed for the first time. The spin quantum jumps are detected via the continuous Stern-Gerlach effect which is used in an experiment with a single proton stored in a cryogenic Penning trap. This opens the way for a direct high-precision measurement of the magnetic moment of the proton and a new test of the matter-antimatter symmetry in the baryon sector. This method can also be applied to other light atomic nuclei.

  8. Analysis of a single-atom dipole trap

    International Nuclear Information System (INIS)

    Weber, Markus; Volz, Juergen; Saucke, Karen; Kurtsiefer, Christian; Weinfurter, Harald

    2006-01-01

    We describe a simple experimental technique which allows us to store a single 87 Rb atom in an optical dipole trap. Due to light-induced two-body collisions during the loading stage of the trap the maximum number of captured atoms is locked to one. This collisional blockade effect is confirmed by the observation of photon antibunching in the detected fluorescence light. The spectral properties of single photons emitted by the atom were studied with a narrow-band scanning cavity. We find that the atomic fluorescence spectrum is dominated by the spectral width of the exciting laser light field. In addition we observe a spectral broadening of the atomic fluorescence light due to the Doppler effect. This allows us to determine the mean kinetic energy of the trapped atom corresponding to a temperature of 105 μK. This simple single-atom trap is the key element for the generation of atom-photon entanglement required for future applications in quantum communication and a first loophole-free test of Bell's inequality

  9. Spectroscopy and nonclassical fluorescence properties of single trapped Ba+ ions

    International Nuclear Information System (INIS)

    Bolle, J.

    1998-06-01

    This thesis reports on the setup and application of an experimental apparatus for spectroscopic and quantum optical investigations of a single Barium ion in a Paul trap. The realization of the apparatus, which consists of the ion trap in ultra high vacuum, two laser systems, and a photon counting detection system, is described in detail, with particular consideration of the noise sources like stray light and laser frequency instabilities. The two lasers at 493 nm and 650 nm needed to continuously excite resonance fluorescence from the Barium ion have been realized using diode lasers only. The preparation of a single localized Barium ion is described, in particular its optical cooling with the laser light and the minimization of induced vibration in the trapping potential. The purely quantum mechanical property of antibunching is observed by measuring the intensity correlation function of resonance fluorescence from the trapped and cooled ion. Interference properties of the single ion resonance fluorescence are investigated with a Mach-Zehnder interferometer. From the measured high-contrast interference signal it is proven that each individual fluorescence photon interferes with itself. The fluorescence excitation spectrum, on varying one laser frequency, is also measured and exhibits dark resonances. These measurements are compared to calculations based on optical Bloch equations for the 8 atomic levels involved. Future experiments, in particular the detection of reduced quantum fluctuations (squeezing) in one quadrature component of the resonance fluorescence, are discussed. (author)

  10. Interface and oxide traps in high-κ hafnium oxide films

    International Nuclear Information System (INIS)

    Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

    2004-01-01

    The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

  11. HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

    International Nuclear Information System (INIS)

    Caymax, M.; Van Elshocht, S.; Houssa, M.; Delabie, A.; Conard, T.; Meuris, M.; Heyns, M.M.; Dimoulas, A.; Spiga, S.; Fanciulli, M.; Seo, J.W.; Goncharova, L.V.

    2006-01-01

    To fabricate MOS gate stacks on Ge, one can choose from a multitude of metal oxides as dielectric material which can be deposited by many chemical or physical vapor deposition techniques. As a few typical examples, we will discuss here the results from atomic layer deposition (ALD), metal organic CVD (MOCVD) and molecular beam deposition (MBD) using HfO 2 /Ge as materials model system. It appears that a completely interface layer free HfO 2 /Ge combination can be made in MBD, but this results in very bad capacitors. The same bad result we find if HfGe y (Hf germanides) are formed like in the case of MOCVD on HF-dipped Ge. A GeO x interfacial layer appears to be indispensable (if no other passivating materials are applied), but the composition of this interfacial layer (as determined by XPS, TOFSIMS and MEIS) is determining for the C/V quality. On the other hand, the presence of Ge in the HfO 2 layer is not the most important factor that can be responsible for poor C/V, although it can still induce bumps in C/V curves, especially in the form of germanates (Hf-O-Ge). We find that most of these interfacial GeO x layers are in fact sub-oxides, and that this could be (part of) the explanation for the high interfacial state densities. In conclusion, we find that the Ge surface preparation is determining for the gate stack quality, but it needs to be adapted to the specific deposition technique

  12. Surface modelling on heavy atom crystalline compounds: HfO2 and UO2 fluorite structures

    International Nuclear Information System (INIS)

    Evarestov, Robert; Bandura, Andrei; Blokhin, Eugeny

    2009-01-01

    The study of the bulk and surface properties of cubic (fluorite structure) HfO 2 and UO 2 was performed using the hybrid Hartree-Fock density functional theory linear combination of atomic orbitals simulations via the CRYSTAL06 computer code. The Stuttgart small-core pseudopotentials and corresponding basis sets were used for the core-valence interactions. The influence of relativistic effects on the structure and properties of the systems was studied. It was found that surface properties of Mott-Hubbard dielectric UO 2 differ from those found for other metal oxides with the closed-shell configuration of d-electrons

  13. Atomic scale engineering of HfO2-based dielectrics for future DRAM applications

    International Nuclear Information System (INIS)

    Dudek, Piotr

    2011-01-01

    Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO 2 thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba-added HfO 2 (BaHfO 3 ) films and Ti-added BaHfO 3 (BaHf 0.5 Ti 0.5 O 3 ) layers are promising candidates for future generation of state-of-the-art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO 3 (k∝38) and BaHf 0.5 Ti 0.5 O 3 (k∝90) with respect to monoclinic HfO 2 (k∝19). Meanwhile the CET values scaled down to 1 nm for BaHfO 3 and ∝0.8 nm for BaHf 0.5 Ti 0.5 O 3 with respect to HfO 2 (CET=1.5 nm). The Hf 4+ ions substitution in BaHfO 3 by Ti 4+ ions led to a significant decrease of thermal budget from 900 C for BaHfO 3 to 700 C for BaHf 0.5 Ti 0.5 O 3 . Future studies need to focus on the use of appropriate metal electrodes (high work function) and on film deposition process (homogeneity) for better current leakage control. (orig.)

  14. Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

    International Nuclear Information System (INIS)

    Yue, Huang; Hong-Yan, Gou; Qing-Qing, Sun; Shi-Jin, Ding; Wei, Zhang; Shi-Li, Zhang

    2009-01-01

    We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO 2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10 11 cm −2 and a diameter range of 5–8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO 2 dielectric exhibits a large C – V hysteresis window of 11.9V for ±11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 × 10 −8 A/cm −2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed

  15. Perpendicular magnetic anisotropy of CoFeB\\Ta bilayers on ALD HfO2

    Directory of Open Access Journals (Sweden)

    Bart F. Vermeulen

    2017-05-01

    Full Text Available Perpendicular magnetic anisotropy (PMA is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO\\CoFe(B interfaces or using an adjacent crystalline heavy metal film. Here, PMA is reported in a CoFeB\\Ta bilayer deposited on amorphous high-κ dielectric (relative permittivity κ=20 HfO2, grown by atomic layer deposition (ALD. PMA with interfacial anisotropy energy Ki up to 0.49 mJ/m2 appears after annealing the stacks between 200°C and 350°C, as shown with vibrating sample magnetometry. Transmission electron microscopy shows that the decrease of PMA starting from 350°C coincides with the onset of interdiffusion in the materials. High-κ dielectrics are potential enablers for giant voltage control of magnetic anisotropy (VCMA. The absence of VCMA in these experiments is ascribed to a 0.6 nm thick magnetic dead layer between HfO2 and CoFeB. The results show PMA can be easily obtained on ALD high-κ dielectrics.

  16. PAC study in the HfO2-SiO2 system

    International Nuclear Information System (INIS)

    Chain, C.Y.; Damonte, L.C.; Ferrari, S.; Munoz, E.; Torres, C. Rodriguez; Pasquevich, A.F.

    2010-01-01

    A high-k HfO 2 /SiO 2 gate stack is taking the place of SiO 2 as a gate dielectric in field effect transistors. This fact makes the study of the solid-state reaction between these oxides very important. Nanostructure characterization of a high-energy ball milled and post-annealed equimolar HfO 2 and amorphous SiO 2 powder mixture has been carried out by perturbed angular correlations (PAC) technique. The study was complemented with X-ray diffraction and positron annihilation lifetime spectroscopy (PALS). The experimental results revealed that the ball milling of equimolar mixtures increases the defects concentration in hafnium oxide. No solid-state reaction occurred even after 8 h of milling. The formation of HfSiO 4 (hafnon) was observed in the milled blends annealed at high temperatures.The PAC results of the milled samples are compared with those obtained for pure m-ZrO 2 subjected to high-energy ball milling and with reported microstructure data for the system ZrO 2 -SiO 2 .

  17. Laser conditioning effect on HfO2/SiO2 film

    International Nuclear Information System (INIS)

    Wei Yaowei; Zhang Zhe; Liu Hao; Ouyang Sheng; Zheng Yi; Tang Gengyu; Chen Songlin; Ma Ping

    2013-01-01

    Laser conditioning is one of the important methods to improve the laser damage threshold of film optics. Firstly, a large aperture laser was used to irradiate the HfO 2 /SiO 2 reflectors, which were evaporated from hafnia and silica by e-beam. Secondly, a laser calorimeter was used to test the film absorption before and after laser irradiation. Focused ion beam (FIB) was few reported using on laser film, it was used to study the damage morphology and explore the cause of damage. The shooting of the partial ejection on nodule was obtained for the first time, which provided the basis for study the damage process. The results show that film absorption was decreased obviously after the laser irradiation, laser conditioning can raise the laser damage threshold by the 'cleaning mechanism'. For the HfO 2 /SiO 2 reflectors, laser conditioning was effective to eject the nodules on substrate. It resulted from the nodule residue not to affect the subsequent laser. In addition, laser conditioning was not effective to the nodule in the film, which might be from the material spatter in coating process. In this case, other method could be used to get rid of the nodules. (authors)

  18. Theoretical prediction of ion conductivity in solid state HfO2

    Science.gov (United States)

    Zhang, Wei; Chen, Wen-Zhou; Sun, Jiu-Yu; Jiang, Zhen-Yi

    2013-01-01

    A theoretical prediction of ion conductivity for solid state HfO2 is carried out in analogy to ZrO2 based on the density functional calculation. Geometric and electronic structures of pure bulks exhibit similarity for the two materials. Negative formation enthalpy and negative vacancy formation energy are found for YSH (yttria-stabilized hafnia) and YSZ (yttria-stabilized zirconia), suggesting the stability of both materials. Low activation energies (below 0.7 eV) of diffusion are found in both materials, and YSH's is a little higher than that of YSZ. In addition, for both HfO2 and ZrO2, the supercells with native oxygen vacancies are also studied. The so-called defect states are observed in the supercells with neutral and +1 charge native vacancy but not in the +2 charge one. It can give an explanation to the relatively lower activation energies of yttria-doped oxides and +2 charge vacancy supercells. A brief discussion is presented to explain the different YSH ion conductivities in the experiment and obtained by us, and we attribute this to the different ion vibrations at different temperatures.

  19. Resistive switching characteristics of HfO2-based memory devices on flexible plastics.

    Science.gov (United States)

    Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig

    2014-11-01

    In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.

  20. HfO2 and SiO2 as barriers in magnetic tunneling junctions

    Science.gov (United States)

    Shukla, Gokaran; Archer, Thomas; Sanvito, Stefano

    2017-05-01

    SiO2 and HfO2 are both high-k, wide-gap semiconductors, currently used in the microelectronic industry as gate barriers. Here we investigate whether the same materials can be employed to make magnetic tunnel junctions, which in principle can be amenable for integration in conventional Si technology. By using a combination of density functional theory and the nonequilibrium Green's functions method for quantum transport we have studied the transport properties of Co [0001 ] /SiO2[001 ] /Co [0001 ] and Fe [001 ] /HfO2[001 ] /Fe [001 ] junctions. In both cases we found a quite large magnetoresistance, which is explained through the analysis of the real band structure of the magnets and the complex one of the insulator. We find that there is no symmetry spin filtering for the Co-based junction since the high transmission Δ2' band crosses the Fermi level, EF, for both spin directions. However, the fact that Co is a strong ferromagnet makes the orbital contribution to the two Δ2' spin subbands different, yielding magnetoresistance. In contrast for the Fe-based junction symmetry filtering is active for an energy window spanning between the Fermi level and 1 eV below EF, with Δ1 symmetry contributing to the transmission.

  1. Cavity QED with single trapped Ca+-ions

    International Nuclear Information System (INIS)

    Mundt, A.B.

    2003-02-01

    This thesis reports on the design and setup of a vacuum apparatus allowing the investigation of cavity QED effects with single trapped 40 Ca + ions. The weak coupling of ion and cavity in the 'bad cavity limit' may serve to inter--convert stationary and flying qubits. The ion is confined in a miniaturized Paul trap and cooled via the Doppler effect to the Lamb--Dicke regime. The extent of the atomic wave function is less than 30 nm. The ion is enclosed by a high finesse optical cavity. The technically--involved apparatus allows movement of the trap relative to the cavity and the trapped ion can be placed at any position in the standing wave. By means of a transfer lock the cavity can be resonantly stabilized with the S 1/2 ↔ D 5/2 quadrupole transition at 729 nm (suitable as a qubit) without light at that wavelength being present in the cavity. The coupling of the cavity field to the S 1/2 ↔ D 5/2 quadrupole transition is investigated with various techniques in order to determine the spatial dependence as well as the temporal dynamics. The orthogonal coupling of carrier and first--order sideband transitions at field nodes and antinodes is explored. The coherent interaction of the ion and the cavity field is confirmed by exciting Rabi oscillations with short resonant pulses injected into the cavity. Finally, first experimental steps towards the observation of cavity enhanced spontaneous emission have been taken. (author)

  2. Characteristics of single-atom trapping in a magneto-optical trap with a high magnetic-field gradient

    International Nuclear Information System (INIS)

    Yoon, Seokchan; Choi, Youngwoon; Park, Sangbum; Ji, Wangxi; Lee, Jai-Hyung; An, Kyungwon

    2007-01-01

    A quantitative study on characteristics of a magneto-optical trap with a single or a few atoms is presented. A very small number of 85 Rb atoms were trapped in a micron-size magneto-optical trap with a high magnetic-field gradient. In order to find the optimum condition for a single-atom trap, we have investigated how the number of atoms and the size of atomic cloud change as various experimental parameters, such as a magnetic-field gradient and the trapping laser intensity and detuning. The averaged number of atoms was measured very accurately with a calibration procedure based on the single-atom saturation curve of resonance fluorescence. In addition, the number of atoms in a trap could be controlled by suppressing stochastic loading events by means of a real-time active feedback on the magnetic-field gradient

  3. Difference in Thermal Degradation Behavior of ZrO2 and HfO2 Anodized Capacitors

    Science.gov (United States)

    Kamijyo, Masahiro; Onozuka, Tomotake; Yoshida, Naoto; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

    2004-09-01

    Microcrystalline ZrO2 and HfO2 thin film capacitors were prepared by anodizing sputter-deposited Zr and Hf films. The thermal degradation behavior of both anodized capacitors was clarified by the measurement of their capacitance properties and Auger depth profiles before and after heat treatment in air. As a result, it is confirmed that the heat-resistance property of the HfO2 anodized capacitor is superior to that of the ZrO2 capacitor. In addition, it is revealed that the thermal degradation of the ZrO2 anodized capacitor is caused by the diffusion of Zr atoms from the underlying layer into the ZrO2 anodized layer, while that of the HfO2 anodized capacitor is caused by the diffusion of oxygen atoms from the anodized layer into the underlying Hf layer.

  4. Simplified atom trap using a single microwave modulated diode laser

    International Nuclear Information System (INIS)

    Newbury, N.R.; Myatt, C.J.; Wieman, C.E.

    1993-01-01

    We have demonstrated microwave modulation of a diode laser which is operated with optical feedback from a diffraction grating. By directly modulating the diode laser current at frequencies up to 6.8 GHz, we observed 2-30% of the laser power in a single sideband for 20mW of microwave power. Using such a diode laser modulated at 6.6GHz, we have trapped 87 Rb in a vapor cell. With 10mW of microwave power, the number of trapped atoms was only 15% smaller than the number obtained using two lasers in the conventional manner. A microwave modulated diode laser should also be useful for driving stimulated Raman transitions between the hyperfine levels of Rb or Cs

  5. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    OpenAIRE

    Lin, Yu-Hsien; Chou, Jay-Chi

    2014-01-01

    This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chem...

  6. Modeling and Implementation of HfO2-based Ferroelectric Tunnel Junctions

    Science.gov (United States)

    Pringle, Spencer Allen

    HfO2-based ferroelectric tunnel junctions (FTJs) represent a unique opportunity as both a next-generation digital non-volatile memory and as synapse devices in braininspired logic systems, owing to their higher reliability compared to filamentary resistive random-access memory (ReRAM) and higher speed and lower power consumption compared to competing devices, including phase-change memory (PCM) and state-of-the-art FTJ. Ferroelectrics are often easier to deposit and have simpler material structure than films for magnetic tunnel junctions (MTJs). Ferroelectric HfO2 also enables complementary metal-oxide-semiconductor (CMOS) compatibility, since lead zirconate titanate (PZT) and BaTiO3-based FTJs often are not. No other groups have yet demonstrated a HfO2-based FTJ (to best of the author's knowledge) or applied it to a suitable system. For such devices to be useful, system designers require models based on both theoretical physical analysis and experimental results of fabricated devices in order to confidently design control systems. Both the CMOS circuitry and FTJs must then be designed in layout and fabricated on the same die. This work includes modeling of proposed device structures using a custom python script, which calculates theoretical potential barrier heights as a function of material properties and corresponding current densities (ranging from 8x103 to 3x10-2 A/cm 2 with RHRS/RLRS ranging from 5x105 to 6, depending on ferroelectric thickness). These equations were then combined with polynomial fits of experimental timing data and implemented in a Verilog-A behavioral analog model in Cadence Virtuoso. The author proposes tristate CMOS control systems, and circuits, for implementation of FTJ devices as digital memory and presents simulated performance. Finally, a process flow for fabrication of FTJ devices with CMOS is presented. This work has therefore enabled the fabrication of FTJ devices at RIT and the continued investigation of them as applied to any appropriate systems.

  7. Photoacoustic measurements of photokinetics in single optically trapped aerosol droplets

    Science.gov (United States)

    Covert, Paul; Cremer, Johannes; Signorell, Ruth; Thaler, Klemens; Haisch, Christoph

    2017-04-01

    It is well established that interaction of light with atmospheric aerosols has a large impact on the Earth's climate. However, uncertainties in the magnitude of this impact remain large, due in part to broad distributions of aerosol size, composition, and chemical reactivity. In this context, photoacoustic spectroscopy is commonly used to measure light absorption by aerosols. Here, we present photoacoustic measurements of single, optically-trapped nanodroplets to reveal droplet size-depencies of photochemical and physical processes. Theoretical considerations have pointed to a size-dependence in the magnitude and phase of the photoacoustic response from aerosol droplets. This dependence is thought to originate from heat transfer processes that are slow compared to the acoustic excitation frequency. In the case of a model aerosol, our measurements of single particle absorption cross-section versus droplet size confirm these theoretical predictions. In a related study, using the same model aerosol, we also demonstrate a droplet size-dependence of photochemical reaction rates [1]. Within sub-micron sized particles, photolysis rates were observed to be an order of magnitude greater than those observed in larger droplets. [1] J. W. Cremer, K. M. Thaler, C. Haisch, and R. Signorell. Photoacoustics of single laser-trapped nanodroplets for the direct observation of nanofocusing in aerosol photokinetics. Nat. Commun., 7:10941, 2016.

  8. Properties of phases in HfO2-TiO2 system

    International Nuclear Information System (INIS)

    Red'ko, V.P.; Terekhovskij, P.B.; Majster, I.M.; Shevchenko, A.V.; Lopato, L.M.; Dvernyakova, A.A.

    1990-01-01

    A study was made on axial and linear coefficients of thermal expansion (CTE) of HfO 2 -TiO 2 system samples in concentration range of 25-50 mol% TiO 2 . Samples, containing 35 and 37 mol% TiO 2 , are characterized by the lowest values of linear CTE. Dispersion of the basic substances doesn't affect CTE value. Correlation with axial and linear CTE of samples in ZrO 2 -TiO 2 system was conducted. Presence of anisotropy of change of lattice parameters was supported for samples, containing 37.5 and 40 mol% TiO 2 . Polymorphous transformations for hafnium titanate were not revealed

  9. Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

    Science.gov (United States)

    Pradhan, Diana; Das, Sanghamitra; Dash, Tara Prasanna

    2016-10-01

    In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO2/strained-Si p-MOSFET device. Peak transconductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO2.

  10. Single trapped cold ions: a testing ground for quantum mechanics

    International Nuclear Information System (INIS)

    Maniscalco, S

    2005-01-01

    In this article I review some results obtained during my PhD work in the group of Professor Messina, at the University of Palermo. I discuss some proposals aimed at exploring fundamental issues of quantum theory, e.g. entanglement and quantum superpositions, in the context of single trapped ions. This physical context turns out to be extremely well suited both for studying fundamental features of quantum mechanics, such as the quantum-classical border, and for technological applications such as quantum logic gates and quantum registers. I focus on some procedures for engineering nonclassical states of the vibrational motion of the centre of mass of the ion. I consider both the case in which the ion interacts with classical laser beams and the case of interaction with a quantized mode of light. In particular, I discuss the generation of Schroedinger cat-like states, Bell states and Greenberger-Horn-Zeilinger states. The schemes for generating nonclassical states stem from two different quantum processes: the parity effect and the quantum state manipulation via quantum non-demolition measurement. Finally, I consider a microscopic theory of the interaction of a quantum harmonic oscillator (the centre of mass of the ion in the trapped ion context) with a bosonic thermal environment. Using an exact approach to the dynamics, I discuss a quantum theory of heating of trapped ions able to describe both the short time non-Markovian regime and the thermalization process. I conclude showing briefly how the trapped ion systems can be used as simulators of key models of open quantum systems such as the Caldeira-Leggett model. (phd tutorial)

  11. First principle simulations on the effects of oxygen vacancy in HfO2-based RRAM

    Directory of Open Access Journals (Sweden)

    Yuehua Dai

    2015-01-01

    Full Text Available HfO2-based resistive random access memory (RRAM takes advantage of oxygen vacancy (V o defects in its principle of operation. Since the change in resistivity of the material is controlled by the level of oxygen deficiency in the material, it is significantly important to study the performance of oxygen vacancies in formation of conductive filament. Excluding effects of the applied voltage, the Vienna ab initio simulation package (VASP is used to investigate the orientation and concentration mechanism of the oxygen vacancies based on the first principle. The optimal value of crystal orientation [010] is identified by means of the calculated isosurface plots of partial charge density, formation energy, highest isosurface value, migration barrier, and energy band of oxygen vacancy in ten established orientation systems. It will effectively influence the SET voltage, forming voltage, and the ON/OFF ratio of the device. Based on the results of orientation dependence, different concentration models are established along crystal orientation [010]. The performance of proposed concentration models is evaluated and analyzed in this paper. The film is weakly conductive for the samples deposited in a mixture with less than 4.167at.% of V o contents, and the resistive switching (RS phenomenon cannot be observed in this case. The RS behavior improves with an increase in the V o contents from 4.167at.% to 6.25at.%; nonetheless, it is found difficult to switch to a stable state. However, a higher V o concentration shows a more favorable uniformity and stability for HfO2-based RRAM.

  12. Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

    Science.gov (United States)

    Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

    2017-12-01

    Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

  13. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2014-01-01

    Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

  14. Coexistence of different charge states in Ta-doped monoclinic HfO2: Theoretical and experimental approaches

    DEFF Research Database (Denmark)

    Taylor, M.A.; Alonso, R.E.; Errico, L.A.

    2010-01-01

    A combination of experiments and ab initio quantum-mechanical calculations has been applied to examine hyperfine interactions in Ta-doped hafnium dioxide. Although the properties of monoclinic HfO2 have been the subject of several earlier studies, some aspects remain open. In particular, time dif...

  15. Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

    Science.gov (United States)

    He, Weifan; Sun, Huajun; Zhou, Yaxiong; Lu, Ke; Xue, Kanhao; Miao, Xiangshui

    2017-08-30

    The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO 2-x , given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO 2-x material have not been studied. Here we report Pt/HfO 2-x /Ti memristors with double memristive modes, forming-free and low operation voltage, which were tuned by oxidation conditions of HfO 2-x films. As O/Hf ratios of HfO 2-x films increase, the forming voltages, SET voltages, and R off /R on windows increase regularly while their resistive transitions undergo from gradually to sharply in I/V sweep. Two memristors with typical resistive transitions were studied to customize binary and multi-level memristive modes, respectively. For binary mode, high-speed switching with 10 3 pulses (10 ns) and retention test at 85 °C (>10 4 s) were achieved. For multi-level mode, the 12-levels stable resistance states were confirmed by ongoing multi-window switching (ranging from 10 ns to 1 μs and completing 10 cycles of each pulse). Our customized binary and multi-level HfO 2-x -based memristors show high-speed switching, multi-level storage and excellent stability, which can be separately applied to logic computing and neuromorphic computing, further suitable for in-memory computing chip when deposition atmosphere may be fine-tuned.

  16. Precision tests of CPT invariance with single trapped antiprotons

    Energy Technology Data Exchange (ETDEWEB)

    Ulmer, Stefan [RIKEN, Ulmer Initiative Research Unit, Wako, Saitama (Japan); Collaboration: BASE-Collaboration

    2015-07-01

    The reason for the striking imbalance of matter and antimatter in our Universe has yet to be understood. This is the motivation and inspiration to conduct high precision experiments comparing the fundamental properties of matter and antimatter equivalents at lowest energies and with greatest precision. According to theory, the most sensitive tests of CPT invariance are measurements of antihydrogen ground-state hyperfine splitting as well as comparisons of proton and antiproton magnetic moments. Within the BASE collaboration we target the latter. By using a double Penning trap we performed very recently the first direct high precision measurement of the proton magnetic moment. The achieved fractional precision of 3.3 ppb improves the currently accepted literature value by a factor of 2.5. Application of the method to a single trapped antiproton will improve precision of the particles magnetic moment by more than a factor of 1000, thus providing one of the most stringent tests of CPT invariance. In my talk I report on the status and future perspectives of our efforts.

  17. Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium

    International Nuclear Information System (INIS)

    Zhu, Meiping; Yi, Kui; Arhilger, Detlef; Qi, Hongji; Shao, Jianda

    2013-01-01

    HfO 2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different Advanced Plasma Source (APS) bias voltages. The refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. Laser induced damage threshold (LIDT) and damage mechanism are also evaluated and discussed. Optical, structural, mechanical and laser induced damage properties of HfO 2 films are found to be sensitive to APS bias voltage. The film stress can be tuned by varying the APS bias voltage. Damage morphologies indicate the LIDT of the HfO 2 films at 1064 nm and 532 nm are dominated by the nodular-defect density in coatings, while the 355 nm LIDT is dominated by the film absorption. HfO 2 films with higher 1064 nm LIDT than samples evaporated from hafnia are achieved with bias voltage of 100 V. - Highlights: • HfO 2 films are evaporated with different Advanced Plasma Source (APS) bias voltages. • Properties of HfO 2 films are sensitive to APS bias voltage. • With a bias voltage of 100 V, HfO 2 coatings without any stress can be achieved. • Higher 1064 nm laser induced damage threshold is achieved at a bias voltage of 100 V

  18. Analyses of desorbed H2O with temperature programmed desorption technique in sol-gel derived HfO2 thin films

    International Nuclear Information System (INIS)

    Shimizu, H.; Nemoto, D.; Ikeda, M.; Nishide, T.

    2009-01-01

    Hafnium oxide (HfO 2 ) is a promising material for the gate insulator in highly miniaturized silicon (Si) ultra-large-scale-integration (ULSI) devices (32 nm and beyond). In the field chemistry, a sol-gel processing has been used to fabricate HfO 2 thin film with the advantages of low cost, relative simplicity, and easy control of the composition of the layers formed. Temperature-programmed desorption (TPD) has been used not only for analyzing adsorbed gases on the surfaces of bulk sol-gel-derived HfO 2 of sol-gel-derived HfO 2 thin film fired at 350, 450, 550 and 700 deg C in sol-gel derived HfO 2 films in air is investigated using TPD, and also the material characterization of HfO 2 thin films is evaluated by X-ray diffraction (XRD) method. The dielectric constant of the films was also estimated using the capacitance-voltage (C-V) method. TPD is essentially a method of analyzing desorped gases from samples heated by infra-red light as a function of temperature under vacuum conditions using a detector of quadruple mass spectroscopy (QMS). Sol-gel-derived HfO 2 films were fabricated on 76-mm-diameter Si(100) wafers as follows. Hafnia sol solutions were prepared by dissolving HfCl 4 in NH 4 OH solution, followed by the of HCOOH. (author)

  19. Physical and chemical study of single aerosol particles using optical trapping cavity ringdown spectroscopy

    Science.gov (United States)

    2016-08-30

    scope that views the trapped particle walking through the ringdown beam step by step. (b) An image that shows the traces of the particle (MWCNT... walking through the RD beam . 5 a b c Fig.3 The OT-CRDS single particle scope views oscillations of a trapped particle. (a) Image of a trapped...and walking single carbon- nanotube particles of ?50 µm in size and viewing those properties via changes of ringdown time. This single- aerosol

  20. Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

    KAUST Repository

    Ahmed, Bilal

    2015-06-01

    It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

    KAUST Repository

    Ahmed, Bilal; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Interface engineered HfO2-based 3D vertical ReRAM

    International Nuclear Information System (INIS)

    Hudec, Boris; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Hou, Tuo-Hung; Jančovič, Peter; Fröhlich, Karol; Mičušík, Matej; Omastová, Mária

    2016-01-01

    We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO 2 /TiN memory cell. The HfO 2 switching layer is grown by atomic layer deposition on the sidewall of a SiO 2 /TiN/SiO 2 /TiN/SiO 2 multilayer pillar. A steep vertical profile was achieved using CMOS-compatible TiN dry etching. We employ in situ TiN bottom interface engineering by ozone, which results in (a) significant forming voltage reduction which allows for forming-free operation in AC pulsed mode, and (b) non-linearity tuning of low resistance state by current compliance during Set operation. The vertical ReRAM shows excellent read and write disturb immunity between vertically stacked cells, retention over 10 4 s and excellent switching stability at 400 K. Endurance of 10 7 write cycles was achieved using 100 ns wide AC pulses while fast switching speed using pulses of only 10 ns width is also demonstrated. The active switching region was evaluated to be located closer to the bottom interface which allows for the observed high endurance. (paper)

  3. Thermoluminescence in HfO_2:Eu"3"+ powders irradiated in UV

    International Nuclear Information System (INIS)

    Ceron R, P. V.; Montes R, E.; Rivera M, T.; Diaz G, J. A. I.; Guzman M, J.

    2016-10-01

    Various inorganic compounds synthesized for photo luminescent applications have also presented a thermoluminescent (Tl) response, for example the metal oxides doped with rare earths. This property extends the use of these materials to the radiation dosimetry. For this reason, in this work the Tl response is presented in HfO_2:Eu"3"+ powders synthesized by the hydrothermal path, exposed to ultraviolet (UV) radiation of 254 nm. The kinetic parameters of its brightness curve were also calculated using the Chen expressions and the analysis method based on the shape of the curve. For the powders irradiated for 10 min the highest Tl response corresponds to the sample with 5% of the impurity, which is 6.5 times higher than the signal corresponding to the intrinsic sample. Its bright curve shows a main peak with a maximum in 148 degrees Celsius and a second order kinetics. Another test with the same material shows the Tl response against the exposure time, with a maximum in the 3 minutes. These calculations and tests constitute a first approach for the study of these powders as Tl dosimeter for UV radiation. (Author)

  4. Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

    KAUST Repository

    Chand, Umesh

    2017-08-05

    We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.

  5. Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers.

    Science.gov (United States)

    Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

    2017-03-02

    Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO 2 /nanoporous-Si and the TiO 2 /nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO 2 /nanoporous Si are lower than that of the HfO 2 /nanoporous Si, the former is more stable than the later.

  6. Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

    Science.gov (United States)

    Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

    2017-03-01

    Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.

  7. SHI induced effects on the electrical and optical properties of HfO_2 thin films deposited by RF sputtering

    International Nuclear Information System (INIS)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S.V.S.; Pathak, A.P.

    2016-01-01

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO_2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO_2 is the only alternative to reduce the leakage current. HfO_2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO_2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO_2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I–V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  8. Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

    International Nuclear Information System (INIS)

    Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

    2006-01-01

    We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

  9. MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

    International Nuclear Information System (INIS)

    Yu Xiangkun; Shao Lin; Chen, Q.Y.; Trombetta, L.; Wang Chunyu; Dharmaiahgari, Bhanu; Wang Xuemei; Chen Hui; Ma, K.B.; Liu Jiarui; Chu, W.-K.

    2006-01-01

    We studied the irradiation effect of 2-MeV Si ions on HfO 2 films deposited on Si substrates. HfO 2 films ∼11 nm thick were deposited onto Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 x 10 14 cm -2 at room temperature, followed by rapid thermal annealing at 1000 deg. C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO 2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors

  10. Effect of heat treatment on properties of HfO2 film deposited by ion-beam sputtering

    Science.gov (United States)

    Liu, Huasong; Jiang, Yugang; Wang, Lishuan; Li, Shida; Yang, Xiao; Jiang, Chenghui; Liu, Dandan; Ji, Yiqin; Zhang, Feng; Chen, Deying

    2017-11-01

    The effects of atmosphere heat treatment on optical, stress, and microstructure properties of an HfO2 film deposited by ion-beam sputtering were systematically researched. The relationships among annealing temperature and refractive index, extinction coefficient, physical thickness, forbidden-band width, tape trailer width, Urbach energy, crystal phase structure, and stress were assessed. The results showed that 400 °C is the transformation point, and the microstructure of the HfO2 film changed from an amorphous into mixed-phase structure. Multistage phonons appeared on the HfO2 film, and the trends of the refractive index, extinction coefficient, forbidden-band width change, and Urbach energy shifted from decrease to increase. With the elevation of the annealing temperature, the film thickness increased monotonously, the compressive stress gradually turned to tensile stress, and the transformation temperature point for the stress was between 200 °C and 300 °C. Therefore, the change in the stress is the primary cause for the shifts in thin-film thickness.

  11. Numerical Analysis of Hydrodynamic Flow in Microfluidic Biochip for Single-Cell Trapping Application

    Directory of Open Access Journals (Sweden)

    Amelia Ahmad Khalili

    2015-11-01

    Full Text Available Single-cell analysis has become the interest of a wide range of biological and biomedical engineering research. It could provide precise information on individual cells, leading to important knowledge regarding human diseases. To perform single-cell analysis, it is crucial to isolate the individual cells before further manipulation is carried out. Recently, microfluidic biochips have been widely used for cell trapping and single cell analysis, such as mechanical and electrical detection. This work focuses on developing a finite element simulation model of single-cell trapping system for any types of cells or particles based on the hydrodynamic flow resistance (Rh manipulations in the main channel and trap channel to achieve successful trapping. Analysis is carried out using finite element ABAQUS-FEA™ software. A guideline to design and optimize single-cell trapping model is proposed and the example of a thorough optimization analysis is carried out using a yeast cell model. The results show the finite element model is able to trap a single cell inside the fluidic environment. Fluid’s velocity profile and streamline plots for successful and unsuccessful single yeast cell trapping are presented according to the hydrodynamic concept. The single-cell trapping model can be a significant important guideline in designing a new chip for biomedical applications.

  12. SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

    KAUST Repository

    Yesibolati, Nulati

    2014-03-14

    For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery capacity at a current density of 150 mAg -1 after 100 cycles is 548 and 853 mAhg-1 for the uncoated and HfO2-coated anodes, respectively. Material analysis reveals that the HfO2 layers are amorphous in nature and conformably coat the SnO2-based anodes. In addition, the analysis reveals that ALD HfO2 not only protects the SnO2-based anodes from irreversible reactions with the electrolyte and buffers its volume change, but also chemically interacts with the SnO2 anodes to increase battery capacity, despite the fact that HfO2 is itself electrochemically inactive. The amorphous nature of HfO2 is an important factor in explaining its behavior, as it still allows sufficient Li diffusion for an efficient anode lithiation/delithiation process to occur, leading to higher battery capacity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Raman Spectroscopy of Optically Trapped Single Biological Micro-Particles

    Science.gov (United States)

    Redding, Brandon; Schwab, Mark J.; Pan, Yong-le

    2015-01-01

    The combination of optical trapping with Raman spectroscopy provides a powerful method for the study, characterization, and identification of biological micro-particles. In essence, optical trapping helps to overcome the limitation imposed by the relative inefficiency of the Raman scattering process. This allows Raman spectroscopy to be applied to individual biological particles in air and in liquid, providing the potential for particle identification with high specificity, longitudinal studies of changes in particle composition, and characterization of the heterogeneity of individual particles in a population. In this review, we introduce the techniques used to integrate Raman spectroscopy with optical trapping in order to study individual biological particles in liquid and air. We then provide an overview of some of the most promising applications of this technique, highlighting the unique types of measurements enabled by the combination of Raman spectroscopy with optical trapping. Finally, we present a brief discussion of future research directions in the field. PMID:26247952

  14. A quantitative study of quasiparticle traps using the single-Cooper-pair-transistor

    OpenAIRE

    Court, N. A.; Ferguson, A. J.; Lutchyn, Roman; Clark, R. G.

    2007-01-01

    We use radio-frequency reflectometry to measure quasiparticle tunneling rates in the single-Cooper-pair-transistor. Devices with and without quasiparticle traps in proximity to the island are studied. A $10^2$ to $10^3$-fold reduction in the quasiparticle tunneling rate onto the island is observed in the case of quasiparticle traps. In the quasiparticle trap samples we also measure a commensurate decrease in quasiparticle tunneling rate off the island.

  15. Fabrication of Metal Nanoparticle Arrays in the ZrO2(Y, HfO2(Y, and GeOx Films by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Oleg Gorshkov

    2017-01-01

    Full Text Available The single sheet arrays of Au nanoparticles (NPs embedded into the ZrO2(Y, HfO2(Y, and GeOx (x≈2 films have been fabricated by the alternating deposition of the nanometer-thick dielectric and metal films using Magnetron Sputtering followed by annealing. The structure and optical properties of the NP arrays have been studied, subject to the fabrication technology parameters. The possibility of fabricating dense single sheet Au NP arrays in the matrices listed above with controlled NP sizes (within 1 to 3 nm and surface density has been demonstrated. A red shift of the plasmonic optical absorption peak in the optical transmission spectra of the nanocomposite films (in the wavelength band of 500 to 650 nm has been observed. The effect was attributed to the excitation of the collective surface plasmon-polaritons in the dense Au NP arrays. The nanocomposite films fabricated in the present study can find various applications in nanoelectronics (e.g., single electronics, nonvolatile memory devices, integrated optics, and plasmonics.

  16. Characterization of photoactivated singlet oxygen damage in single-molecule optical trap experiments.

    Science.gov (United States)

    Landry, Markita P; McCall, Patrick M; Qi, Zhi; Chemla, Yann R

    2009-10-21

    Optical traps or "tweezers" use high-power, near-infrared laser beams to manipulate and apply forces to biological systems, ranging from individual molecules to cells. Although previous studies have established that optical tweezers induce photodamage in live cells, the effects of trap irradiation have yet to be examined in vitro, at the single-molecule level. In this study, we investigate trap-induced damage in a simple system consisting of DNA molecules tethered between optically trapped polystyrene microspheres. We show that exposure to the trapping light affects the lifetime of the tethers, the efficiency with which they can be formed, and their structure. Moreover, we establish that these irreversible effects are caused by oxidative damage from singlet oxygen. This reactive state of molecular oxygen is generated locally by the optical traps in the presence of a sensitizer, which we identify as the trapped polystyrene microspheres. Trap-induced oxidative damage can be reduced greatly by working under anaerobic conditions, using additives that quench singlet oxygen, or trapping microspheres lacking the sensitizers necessary for singlet state photoexcitation. Our findings are relevant to a broad range of trap-based single-molecule experiments-the most common biological application of optical tweezers-and may guide the development of more robust experimental protocols.

  17. Nested Penning Trap as a Source of Singly Charged Ions

    International Nuclear Information System (INIS)

    Ordonez, C.A.

    2003-01-01

    In the work reported, the possibility of using a nested Penning trap as a high purity source of low-charge-state ions is studied. For the configuration considered, a relatively dense ion plasma is confined by a three-dimensional electric potential well. The three-dimensional well is produced by the electric field generated by both the trap electrodes and a trapped electron plasma. The ion and electron plasmas are each considered to have Maxwellian velocity distributions. However, it is shown that the electron plasma must have a temperature that is higher than that of the ion plasma when the ions have low charge states. The work reported includes a self-consistent prediction of a possible plasma equilibrium

  18. Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

    Science.gov (United States)

    Materlik, Robin; Künneth, Christopher; Falkowski, Max; Mikolajick, Thomas; Kersch, Alfred

    2018-04-01

    III-valent dopants have shown to be most effective in stabilizing the ferroelectric, crystalline phase in atomic layer deposited, polycrystalline HfO2 thin films. On the other hand, such dopants are commonly used for tetragonal and cubic phase stabilization in ceramic HfO2. This difference in the impact has not been elucidated so far. The prospect is a suitable doping to produce ferroelectric HfO2 ceramics with a technological impact. In this paper, we investigate the impact of Al, Y, and La doping, which have experimentally proven to stabilize the ferroelectric Pca21 phase in HfO2, in a comprehensive first-principles study. Density functional theory calculations reveal the structure, formation energy, and total energy of various defects in HfO2. Most relevant are substitutional electronically compensated defects without oxygen vacancy, substitutional mixed compensated defects paired with a vacancy, and ionically compensated defect complexes containing two substitutional dopants paired with a vacancy. The ferroelectric phase is strongly favored with La and Y in the substitutional defect. The mixed compensated defect favors the ferroelectric phase as well, but the strongly favored cubic phase limits the concentration range for ferroelectricity. We conclude that a reduction of oxygen vacancies should significantly enhance this range in Y doped HfO2 thin films. With Al, the substitutional defect hardly favors the ferroelectric phase before the tetragonal phase becomes strongly favored with the increasing concentration. This could explain the observed field induced ferroelectricity in Al-doped HfO2. Further Al defects are investigated, but do not favor the f-phase such that the current explanation remains incomplete for Al doping. According to the simulation, doping alone shows clear trends, but is insufficient to replace the monoclinic phase as the ground state. To explain this fact, some other mechanism is needed.

  19. Rapid formation of nanocrystalline HfO2 powders from amorphous hafnium hydroxide under ultrasonically assisted hydrothermal treatment

    International Nuclear Information System (INIS)

    Meskin, Pavel E.; Sharikov, Felix Yu.; Ivanov, Vladimir K.; Churagulov, Bulat R.; Tretyakov, Yury D.

    2007-01-01

    Peculiarities of hafnium hydroxide hydrothermal decomposition were studied by in situ heat flux calorimetry for the first time. It was shown that this process occurs in one exothermal stage (ΔH = -17.95 kJ mol -1 ) at 180-250 deg. C resulting in complete crystallization of amorphous phase with formation of pure monoclinic HfO 2 . It was found that the rate of m-HfO 2 formation can be significantly increased by combining hydrothermal treatment with simultaneous ultrasonic activation

  20. Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

    Directory of Open Access Journals (Sweden)

    Deepthi Nagulapally

    2015-01-01

    Full Text Available The Inverse Piezoelectric Effect (IPE is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs. Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

  1. HfO2 - rare earth oxide systems in the region with high content of rare earth oxide

    International Nuclear Information System (INIS)

    Shevchenko, A.V.; Lopato, L.M.

    1982-01-01

    Using the methods of annealing and hardenings (10 2 -10 4 deg/s cooling rate) and differential thermal analysis elements of state diagrams of HfO 2 - rare earth oxide (rare earths-La, Pr, Nd, Sm, Gd, Tb, Dy, Y, Er, Yb, Lu, Sc) systems from 1800 deg C up to melting in the range of 60-100 mol% rare earth oxide concentration were constructed. Regularities of HfQ 2 addition effect on high-temperature polymorphic transformations of rare earth oxides were studied. Results of investigation were discussed from viewpoint of crystal chemistry

  2. Integrated microfluidic device for single-cell trapping and spectroscopy

    KAUST Repository

    Liberale, Carlo

    2013-02-13

    Optofluidic microsystems are key components towards lab-on-a-chip devices for manipulation and analysis of biological specimens. In particular, the integration of optical tweezers (OT) in these devices allows stable sample trapping, while making available mechanical, chemical and spectroscopic analyses.

  3. Integrated microfluidic device for single-cell trapping and spectroscopy

    KAUST Repository

    Liberale, Carlo; Cojoc, G.; Bragheri, F.; Minzioni, P.; Perozziello, G.; La Rocca, R.; Ferrara, L.; Rajamanickam, V.; Di Fabrizio, Enzo M.; Cristiani, I.

    2013-01-01

    Optofluidic microsystems are key components towards lab-on-a-chip devices for manipulation and analysis of biological specimens. In particular, the integration of optical tweezers (OT) in these devices allows stable sample trapping, while making available mechanical, chemical and spectroscopic analyses.

  4. Study of structure and antireflective properties of LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 trilayers for UV applications

    Science.gov (United States)

    Marszalek, K.; Jaglarz, J.; Sahraoui, B.; Winkowski, P.; Kanak, J.

    2015-01-01

    The aim of this paper is to study antireflective properties of the tree-layer systems LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 deposited on heated optical glass substrates. The films were evaporated by the use two deposition techniques. In first method oxide films were prepared by means of e-gun evaporation in vacuum of 5 × 10-5 mbar in the presence of oxygen. The second was used for the deposition of fluoride films. They were obtained by means of thermal source evaporation. Simulation of reflectance was performed for 1M2H1L (Quarter Wavelength Optical Thickness) film stack on an optical quartz glass with the refractive index n = 1.46. The layer thickness was optimized to achieve the lowest light scattering from glass surface covered with dioxide and fluoride films. The values of the interface roughness were determined through atomic force microscopy measurements. The essence of performed calculation was to find minimum reflectance of light in wide ultraviolet region. The spectral dispersion of the refractive index needed for calculations was determined from ellipsometric measurements using the spectroscopic ellipsometer M2000. Additionally, the total reflectance measurements in integrating sphere coupled with Perkin Elmer 900 spectrophotometer were performed. These investigations allowed to determine the influence of such film features like surface and interface roughness on light scattering.

  5. Studies of the hyperfine interaction in semiconducting or isolating oxides on the examples HfO2, Ga2O3, and Al2O3

    International Nuclear Information System (INIS)

    Steffens, Michael

    2014-01-01

    On the example of the three oxide compounds of the hafnium, gallium, and aluminium among others the method of the perturbed γ-γ angular correlation (PAC) was applied in dependence on the sample temperature. Applied were thereby the PAC probe nuclei 111 Cd and 181 Ga, which were inserted in the samples by ion implantation or proced by neutron activation in the samples. In HfO 2 thereby especially the hyperfine interaction of thin layers with thicknesses from 2.7 to 17 nm and 100 nm were studied. Strongly disagreeing field gradients and a great influence of the sample surface on the measurement are shown. It could be shown that ν qO x should scale with the layer thickness of the oxide and that the temperature-dependent behaviour, which is influenced by the thermal expansion of the lattice, underlies also this scaling. Conditioned by the neighbourhood to the surface at high temperature oxygen can escape from the samples and so degrade the oxide. The studied Ga 2 O 3 layers were produced by oxidation of GaN at 1223 K in air. The structure of the oxide layer was thereby stepwise pursued with the PAC and could be modelled with an exponential time dependence. The oxidation was repeated with several samples at equal absolute oxidation time but different partition in intermediate steps. Altogether the result were shown as reproducable, the occuring differences of the hyperfine interactions are probably given by external quantities fluctuating in the oxidation. The measurement of the Al 2 O 3 sample in the PAC furnace and cryostat represents mainly a reproduction of the preceding experiments of Penner et al. In this materials the attempt held the spotlight to manipulate the temperature-dependent behaviour of the hyperfine interaction by additional doping. Over the experiments of the single materials was set the more precise consideration of dynamic hyperfine interactions on the probe nucleus 111 Cd. In the spin-correlation functions R(t) these were manifested by an

  6. Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

    Science.gov (United States)

    Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

    2000-01-01

    We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

  7. Influence of modulation method on using LC-traps with single-phase voltage source converters

    DEFF Research Database (Denmark)

    Wang, Xiongfei; Min, Huang; Bai, Haofeng

    2015-01-01

    The switching-frequency LC-trap filter has recently been employed with high-order passive filters for Voltage Source Inverters (VSIs). This paper investigates the influence of modulation method on using the LC-traps with single-phase VSIs. Two-level (bipolar) and three-level (unipolar) modulations...... that include phase distortion and alternative phase opposition distortion methods are analyzed. Harmonic filtering performances of four LC-trap-based filters with different locations of LC-traps are compared. It is shown that the use of parallel-LC-traps in series with filter inductors, either grid...... or converter side, has a worse harmonic filtering performance than using series-LC-trap in the shunt branch. Simulations and experimental results are presented for verifications....

  8. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

    Science.gov (United States)

    Palade, C.; Lepadatu, A. M.; Slav, A.; Lazanu, S.; Teodorescu, V. S.; Stoica, T.; Ciurea, M. L.

    2018-01-01

    Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.

  9. Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO_2 substrates

    International Nuclear Information System (INIS)

    Frascaroli, Jacopo; Seguini, Gabriele; Spiga, Sabina; Perego, Michele; Boarino, Luca

    2015-01-01

    Block copolymer-based templates can be exploited for the fabrication of ordered arrays of metal nanoparticles (NPs) with a diameter down to a few nanometers. In order to develop this technique on metal oxide substrates, we studied the self-assembly of polymeric templates directly on the HfO_2 surface. Using a random copolymer neutralization layer, we obtained an effective HfO_2 surface neutralization, while the effects of surface cleaning and annealing temperature were carefully examined. Varying the block copolymer molecular weight, we produced regular nanoporous templates with feature size variable between 10 and 30 nm and a density up to 1.5 × 10"1"1 cm"−"2. With the adoption of a pattern transfer process, we produced ordered arrays of Pt and Pt/Ti NPs with diameters of 12, 21 and 29 nm and a constant size dispersion (σ) of 2.5 nm. For the smallest template adopted, the NP diameter is significantly lower than the original template dimension. In this specific configuration, the granularity of the deposited film probably influences the pattern transfer process and very small NPs of 12 nm were achieved without a significant broadening of the size distribution. (paper)

  10. High temperature X-ray diffraction studies on HfO2-Gd2O3 system

    International Nuclear Information System (INIS)

    Panneerselvam, G.; Antony, M.P.; Ananthasivan, K.; Joseph, M.

    2016-01-01

    High temperature X-ray diffraction (HTXRD) technique is an important experimental tool for measuring thermal expansion of materials of interest. A series of solid solutions containing GdO 1.5 in HfO 2 ,Hf 1-y Gd y )O 2 (y = 0.15, 0.2, 0.3, 0.41 and 0.505) were prepared by solid state method. Structural characterization and computation of lattice parameter was carried out by using room temperature X-ray diffraction measurements. The room temperature lattice parameter estimated for (Hf 1-y Gd y )O 2 (y=0.15, 0.2, 0.3, 0.41 and 0.505) are 0.51714 nm, 0.51929 nm, 0.52359nm, 0.52789nm and 0.53241 nm, respectively. Thermal expansion coefficients and percentage linear thermal expansion of the HfO 2 -Gd 2 O 3 solid solutions containing 20 and 41 mol% GdO 1.5 were determined using HTXRD in the temperature range 298 to 1673K. The mean linear thermal expansion coefficients of the solid solutions containing 20 and 41 mol. %Gd are 11.65 x 10 -6 K -1 and 12.07 x 10 -6 K -1 , respectively. (author)

  11. GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier

    Science.gov (United States)

    Han, Kefeng; Zhu, Lin

    2017-09-01

    In order to suppress the gate leakage current of a GaN high electron mobility transistor (GaN HEMT), a GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, in which a metal-oxide-semiconductor gate with high-dielectric-constant HfO2 as an insulating dielectric is employed to replace the traditional GaN HEMT Schottky gate. A 0.5 μm gate length GaN MOSHEMT was fabricated based on the proposed structure, the {{{Al}}}0.28{{{Ga}}}0.72{{N}} barrier layer is partially etched to produce a higher transconductance without deteriorating the transport characteristics of the two-dimensional electron gas in the channel, the gate dielectric is HfO2 deposited by atomic layer deposition. Current-voltage characteristics and radio frequency characteristics are obtained after device preparation, the maximum current density of the device is 900 mA mm-1, the source-drain breakdown voltage is 75 V, gate current is significantly suppressed and the forward gate voltage swing range is about ten times higher than traditional GaN HEMTs, the GaN MOSHEMT also demonstrates radio frequency characteristics comparable to traditional GaN HEMTs with the same gate length.

  12. Effect of interfacial SiO2- y layer and defect in HfO2- x film on flat-band voltage of HfO2- x /SiO2- y stacks for backside-illuminated CMOS image sensors

    Science.gov (United States)

    Na, Heedo; Lee, Jimin; Jeong, Juyoung; Kim, Taeho; Sohn, Hyunchul

    2018-03-01

    In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2- x ) film and the influence of the quality of the SiO2- y interlayer on the nature of flat-band voltage ( V fb) in TiN/HfO/SiO2- y /p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C- V and J- E analyses, the V fb behavior was significantly affected by the characteristics of the SiO2- y interlayer and the non-lattice oxygen fraction in the HfO2- x films. The HfO2- x /native SiO2- y stack presented a V fb of - 1.01 V for HfO2- x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V fb of the HfO2- x /native SiO2- y stack could be controlled from - 1.01 to - 0.56 V by changing the deposition conditions of the HfO2- x film with the native SiO2- y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

  13. Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

    International Nuclear Information System (INIS)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-01-01

    Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

  14. Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

    International Nuclear Information System (INIS)

    Tang Zhen-Jie; Li Rong; Yin Jiang

    2013-01-01

    A composition-modulated (HfO 2 ) x (Al 2 O3) 1−x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO 2 ) x (Al 2 O 3 ) 1−x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Gap-related trapped magnetic flux dependence between single and combined bulk superconductors

    International Nuclear Information System (INIS)

    Deng, Z.; Miki, M.; Felder, B.; Tsuzuki, K.; Shinohara, N.; Uetake, T.; Izumi, M.

    2011-01-01

    Highlights: → Rectangular YBCO bulks to realize a compact combination. → The gap effect was added to consider in the trapped flux density mapping. → The trapped-flux dependence between single and combined bulks is gap related. → It is possible to estimate the total magnetic flux of bulk combinations. - Abstract: Aiming at examining the trapped-flux dependence between single and combined bulk superconductors for field-pole applications, three rectangular Y 1.65 Ba 2 Cu 3 O 7-x (YBCO) bulks with a possibly compact combination were employed to investigate the trapped-flux characteristics of single and combined bulks with a field-cooling magnetization (FCM) method. A gap-related dependence was found between them. At lower gaps of 1 mm and 5 mm, the peak trapped fields and total magnetic flux of combined bulks are both smaller than the additive values of each single bulk, which can be ascribed to the demagnetization influences of the field around the bulk generated by the adjacent ones. While, at larger gaps like 10 mm, the situation becomes reversed. The combined bulks can attain bigger peak trapped fields as well as total magnetic flux, which indicates that the magnetic field by the bulk combination can reach higher gaps, thanks to the bigger magnetic energy compared with the single bulk. The presented results show that, on one hand, it is possible to estimate the total trapped magnetic flux of combined bulks by an approximate additive method of each single bulk while considering a demagnetization factor; on the other hand, it also means that the performance of combined bulks will be superior to the addition of each single bulk at larger gaps, thus preferable for large-scaled magnet applications.

  16. Gap-related trapped magnetic flux dependence between single and combined bulk superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Z., E-mail: zgdeng@gmail.co [Laboratory of Applied Physics, Department of Marine Electronics and Mechanical Engineering, Tokyo University of Marine Science and Technology, Tokyo 135-8533 (Japan); Miki, M.; Felder, B.; Tsuzuki, K.; Shinohara, N.; Uetake, T.; Izumi, M. [Laboratory of Applied Physics, Department of Marine Electronics and Mechanical Engineering, Tokyo University of Marine Science and Technology, Tokyo 135-8533 (Japan)

    2011-05-15

    Highlights: {yields} Rectangular YBCO bulks to realize a compact combination. {yields} The gap effect was added to consider in the trapped flux density mapping. {yields} The trapped-flux dependence between single and combined bulks is gap related. {yields} It is possible to estimate the total magnetic flux of bulk combinations. - Abstract: Aiming at examining the trapped-flux dependence between single and combined bulk superconductors for field-pole applications, three rectangular Y{sub 1.65}Ba{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) bulks with a possibly compact combination were employed to investigate the trapped-flux characteristics of single and combined bulks with a field-cooling magnetization (FCM) method. A gap-related dependence was found between them. At lower gaps of 1 mm and 5 mm, the peak trapped fields and total magnetic flux of combined bulks are both smaller than the additive values of each single bulk, which can be ascribed to the demagnetization influences of the field around the bulk generated by the adjacent ones. While, at larger gaps like 10 mm, the situation becomes reversed. The combined bulks can attain bigger peak trapped fields as well as total magnetic flux, which indicates that the magnetic field by the bulk combination can reach higher gaps, thanks to the bigger magnetic energy compared with the single bulk. The presented results show that, on one hand, it is possible to estimate the total trapped magnetic flux of combined bulks by an approximate additive method of each single bulk while considering a demagnetization factor; on the other hand, it also means that the performance of combined bulks will be superior to the addition of each single bulk at larger gaps, thus preferable for large-scaled magnet applications.

  17. Gap-related trapped magnetic flux dependence between single and combined bulk superconductors

    Science.gov (United States)

    Deng, Z.; Miki, M.; Felder, B.; Tsuzuki, K.; Shinohara, N.; Uetake, T.; Izumi, M.

    2011-05-01

    Aiming at examining the trapped-flux dependence between single and combined bulk superconductors for field-pole applications, three rectangular Y 1.65Ba 2Cu 3O 7-x (YBCO) bulks with a possibly compact combination were employed to investigate the trapped-flux characteristics of single and combined bulks with a field-cooling magnetization (FCM) method. A gap-related dependence was found between them. At lower gaps of 1 mm and 5 mm, the peak trapped fields and total magnetic flux of combined bulks are both smaller than the additive values of each single bulk, which can be ascribed to the demagnetization influences of the field around the bulk generated by the adjacent ones. While, at larger gaps like 10 mm, the situation becomes reversed. The combined bulks can attain bigger peak trapped fields as well as total magnetic flux, which indicates that the magnetic field by the bulk combination can reach higher gaps, thanks to the bigger magnetic energy compared with the single bulk. The presented results show that, on one hand, it is possible to estimate the total trapped magnetic flux of combined bulks by an approximate additive method of each single bulk while considering a demagnetization factor; on the other hand, it also means that the performance of combined bulks will be superior to the addition of each single bulk at larger gaps, thus preferable for large-scaled magnet applications.

  18. Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

    International Nuclear Information System (INIS)

    Cabout, T.; Buckley, J.; Cagli, C.; Jousseaume, V.; Nodin, J.-F.; Salvo, B. de; Bocquet, M.; Muller, Ch.

    2013-01-01

    This paper deals with the role of platinum or titanium–titanium nitride electrodes on variability of resistive switching characteristics and electrical performances of HfO 2 -based memory elements. Capacitor-like Pt/HfO 2 (10 nm)/Pt and Ti/HfO 2 (10 nm)/TiN structures were fabricated on top of a tungsten pillar bottom electrode and integrated in-between two interconnect metal lines. First, quasi-static measurements were performed to apprehend the role of electrodes on electroforming, set and reset operations and their corresponding switching parameters. Memory elements with Pt as top and bottom electrodes exhibited a non-polar behavior with sharp decrease of current during reset operation while Ti/HfO 2 /TiN capacitors showed a bipolar switching behavior, with a gradual reset. In a second step, statistical distributions of switching parameters (voltage and resistance) were extracted from data obtained on few hundreds of capacitors. Even if the resistance in low resistive state and reset voltage was found to be comparable for both types of electrodes, the progressive reset operation observed on samples with Ti/TiN electrodes led to a lower variability of resistance in high resistive state and concomitantly of set voltage. In addition Ti–TiN electrodes enabled gaining: (i) lower forming and set voltages with significantly narrower capacitor-to-capacitor distributions; (ii) a better data retention capability (10 years at 65 °C instead of 10 years at 50 °C for Pt electrodes); (iii) satisfactory dynamic performances with lower set and reset voltages for ramp speed ranging from 10 −2 to 10 7 V/s. The significant improvement of switching behavior with Ti–TiN electrodes is mainly attributed to the formation of a native interface layer between HfO 2 oxide and Ti top electrode. - Highlights: ► HfO2 based capacitor-like structures were fabricated with Pt and Ti based electrodes. ► Influence of electrode materials on switching parameter variability is assessed. ► Switching parameter variability is linked to switching behaviors. ► Data retention and dynamic performances are presented

  19. Trapping effects and acoustoelectric current saturation in ZnO single crystals

    DEFF Research Database (Denmark)

    Mosekilde, Erik

    1970-01-01

    Measurements of current-voltage characteristics for ZnO single crystals at temperatures between 77 and 640 °K are reported. Because of the buildup of an intense acoustic flux, a strong current saturation sets in when the trap-controlled electron drift velocity is equal to the velocity of sound....... The temperature dependence of the saturated current is discussed in terms of a trapping model which includes nonlinear trapping effects. Our results indicate the presence of a shallow-donor level with an ionization energy of 50 meV and a deep-donor level approximately 230 meV below the conduction-band edge...

  20. Mass sensors with mechanical traps for weighing single cells in different fluids.

    Science.gov (United States)

    Weng, Yaochung; Delgado, Francisco Feijó; Son, Sungmin; Burg, Thomas P; Wasserman, Steven C; Manalis, Scott R

    2011-12-21

    We present two methods by which single cells can be mechanically trapped and continuously monitored within the suspended microchannel resonator (SMR) mass sensor. Since the fluid surrounding the trapped cell can be quickly and completely replaced on demand, our methods are well suited for measuring changes in cell size and growth in response to drugs or other chemical stimuli. We validate our methods by measuring the density of single polystyrene beads and Saccharomyces cerevisiae yeast cells with a precision of approximately 10(-3) g cm(-3), and by monitoring the growth of single mouse lymphoblast cells before and after drug treatment.

  1. Continuous imaging of a single neutral atom in a variant magneto-optical trap

    International Nuclear Information System (INIS)

    Xia Tian; Zhou Shuyu; Chen Peng; Li Lin; Hong Tao; Wang Yuzhu

    2010-01-01

    We demonstrate continuous imaging of a single 87 Rb atom confined in a steep magneto-optical trap with an electron-multiplying charge-coupled device (EMCCD) camera and realize a one-dimensional micro-optical trap array with a Dammann grating. We adopt several methods to reduce the noise in the fluorescence signal we obtain with the EMCCD. Step jumping characteristics of the fluorescence demonstrate capturing and losing of individual atoms. (authors)

  2. Mode division multiplexing technology for single-fiber optical trapping axial-position adjustment.

    Science.gov (United States)

    Liu, Zhihai; Wang, Lei; Liang, Peibo; Zhang, Yu; Yang, Jun; Yuan, Libo

    2013-07-15

    We demonstrate trapped yeast cell axial-position adjustment without moving the optical fiber in a single-fiber optical trapping system. The dynamic axial-position adjustment is realized by controlling the power ratio of the fundamental mode beam (LP01) and the low-order mode beam (LP11) generated in a normal single-core fiber. In order to separate the trapping positions produced by the two mode beams, we fabricate a special fiber tapered tip with a selective two-step method. A yeast cell of 6 μm diameter is moved along the optical axis direction for a distance of ~3 μm. To the best of our knowledge, this is the first demonstration of the trapping position adjustment without moving the fiber for single-fiber optical tweezers. The excitation and utilization of multimode beams in a single fiber constitutes a new development for single-fiber optical trapping and makes possible more practical applications in biomedical research fields.

  3. The Development of HfO2-Rare Earth Based Oxide Materials and Barrier Coatings for Thermal Protection Systems

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan James

    2014-01-01

    Advanced hafnia-rare earth oxides, rare earth aluminates and silicates have been developed for thermal environmental barrier systems for aerospace propulsion engine and thermal protection applications. The high temperature stability, low thermal conductivity, excellent oxidation resistance and mechanical properties of these oxide material systems make them attractive and potentially viable for thermal protection systems. This paper will focus on the development of the high performance and high temperature capable ZrO2HfO2-rare earth based alloy and compound oxide materials, processed as protective coating systems using state-or-the-art processing techniques. The emphasis has been in particular placed on assessing their temperature capability, stability and suitability for advanced space vehicle entry thermal protection systems. Fundamental thermophysical and thermomechanical properties of the material systems have been investigated at high temperatures. Laser high-heat-flux testing has also been developed to validate the material systems, and demonstrating durability under space entry high heat flux conditions.

  4. Electrical behaviour of fully solution processed HfO2 (MOS) in presence of different light illumination

    Science.gov (United States)

    Mondal, Sandip

    2018-04-01

    This experiment demonstrates the electrical behaviors of fully solution processed HfO2(MOS) in presence of different optical illumination. The capacitance voltage measurement was performed at frequency of 100 kHz with a DC gate sweep voltage of ±5V (with additional AC voltage of 100mV) in presence of deep UV (wavelength of 365nm with power of 25W) as well as white light (20W). It is found that there is a large shift in flatband voltage of 120mV due presence of white light during the CV measurement. However there is negligible change in flatband voltage (30mV) has been observed due to illumination of deep UV light.

  5. SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

    KAUST Repository

    Yesibolati, Nulati; Shahid, Muhammad; Chen, Wei; Hedhili, Mohamed N.; Reuter, Mark C.; Ross, Frances M.; Alshareef, Husam N.

    2014-01-01

    For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery

  6. Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

    Science.gov (United States)

    Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

    2017-11-24

    We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

  7. Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

    International Nuclear Information System (INIS)

    Ganapathi, Kolla Lakshmi; Bhat, Navakanta; Mohan, Sangeneni

    2014-01-01

    HfO 2  thin films deposited on Si substrate using electron beam evaporation, are evaluated for back-gated graphene transistors. The amount of O 2  flow rate, during evaporation is optimized for 35 nm thick HfO 2  films, to achieve the best optical, chemical and electrical properties. It has been observed that with increasing oxygen flow rate, thickness of the films increased and refractive index decreased due to increase in porosity resulting from the scattering of the evaporant. The films deposited at low O 2  flow rates (1 and 3 SCCM) show better optical and compositional properties. The effects of post-deposition annealing and post-metallization annealing in forming gas ambience (FGA) on the optical and electrical properties of the films have been analyzed. The film deposited at 3 SCCM O 2  flow rate shows the best properties as measured on MOS capacitors. To evaluate the performance of device properties, back-gated bilayer graphene transistors on HfO 2  films deposited at two O 2  flow rates of 3 and 20 SCCM have been fabricated and characterized. The transistor with HfO 2  film deposited at 3 SCCM O 2  flow rate shows better electrical properties consistent with the observations on MOS capacitor structures. This suggests that an optimum oxygen pressure is necessary to get good quality films for high performance devices. (paper)

  8. The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yue; Ma Xiao-Hua; Wang Chong; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Yang Lin-An; Yang Ling; Zhang Kai; Zhang Nai-Qian; Pei Yi; Yang Cui

    2011-01-01

    A GaN/Al 0.3 Ga 0.7 N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO 2 insulator (HfO 2 -FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO 2 -FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO 2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. Single-atom lasing induced atomic self-trapping

    International Nuclear Information System (INIS)

    Salzburger, T.; Ritsch, H.

    2004-01-01

    We study atomic center of mass motion and field dynamics of a single-atom laser consisting of a single incoherently pumped free atom moving in an optical high-Q resonator. For sufficient pumping, the system starts lasing whenever the atom is close to a field antinode. If the field mode eigenfrequency is larger than the atomic transition frequency, the generated laser light attracts the atom to the field antinode and cools its motion. Using quantum Monte Carlo wave function simulations, we investigate this coupled atom-field dynamics including photon recoil and cavity decay. In the regime of strong coupling, the generated field shows strong nonclassical features like photon antibunching, and the atom is spatially confined and cooled to sub-Doppler temperatures. (author)

  10. The influence of thermal treatment on the phase development in HfO2-Al2O3 and ZrO2-Al2O3 systems

    International Nuclear Information System (INIS)

    Stefanic, G.; Music, S.; Trojko, R.

    2005-01-01

    Amorphous precursors of HfO 2 -AlO 1.5 and ZrO 2 -AlO 1.5 systems covering the whole concentration range were co-precipitated from aqueous solutions of the corresponding salts. The thermal behaviour of the amorphous precursors was examined by differential thermal analysis, X-ray powder diffraction (XRD), laser Raman spectroscopy and scanning electron microscopy. The crystallization temperature of both systems increased with increase in the AlO 1.5 content, from 530 to 940 deg. C in the HfO 2 -AlO 1.5 system, and from 405 to 915 deg. C in the ZrO 2 -AlO 1.5 system. The results of phase analysis indicate an extended capability for the incorporation of Al 3+ ions in the metastable HfO 2 - and ZrO 2 -type solid solutions obtained after crystallization of amorphous co-gels. Precise determination of lattice parameters, performed using whole-powder-pattern decomposition method, showed that the axial ratio c f /a f in the ZrO 2 - and HfO 2 -type solid solutions with 10 mol% or more of Al 3+ approach 1. The tetragonal symmetry of these samples, as determined by laser Raman spectroscopy, was attributed to the displacement of the oxygen sublattice from the ideal fluorite positions. It was found that the lattice parameters of the ZrO 2 -type solid solutions decreased with increasing Al 3+ content up to ∼10 mol%, whereas above 10 mol%, further increase of the Al 3+ content has very small influence on the unit-cell volume of both HfO 2 - and ZrO 2 -type solid solutions. The reason for such behaviour was discussed. The solubility of Hf 4+ and Zr 4+ ions in the aluminium oxides lattice appeared to be negligible

  11. Investigation of various properties of HfO2-TiO2 thin film composites deposited by multi-magnetron sputtering system

    Science.gov (United States)

    Mazur, M.; Poniedziałek, A.; Kaczmarek, D.; Wojcieszak, D.; Domaradzki, J.; Gibson, D.

    2017-11-01

    In this work the properties of hafnium dioxide (HfO2), titanium dioxide (TiO2) and mixed HfO2-TiO2 thin films with various amount of titanium addition, deposited by magnetron sputtering were described. Structural, surface, optical and mechanical properties of deposited coatings were analyzed. Based on X-ray diffraction and Raman scattering measuremets it was observed that there was a significant influence of titanium concentration in mixed TiO2-HfO2 thin films on their microstructure. Increase of Ti content in prepared mixed oxides coatings caused, e.g. a decrease of average crystallite size and amorphisation of the coatings. As-deposited hafnia and titania thin films exhibited nanocrystalline structure of monoclinic phase and mixed anatase-rutile phase for HfO2 and TiO2 thin films, respectively. Atomic force microscopy investigations showed that the surface of deposited thin films was densely packed, crack-free and composed of visible grains. Surface roughness and the value of water contact angle decreased with the increase of Ti content in mixed oxides. Results of optical studies showed that all deposited thin films were well transparent in a visible light range. The effect of the change of material composition on the cut-off wavelength, refractive index and packing density was also investigated. Performed measurements of mechanical properties revealed that hardness and Young's elastic modulus of thin films were dependent on material composition. Hardness of thin films increased with an increase of Ti content in thin films, from 4.90 GPa to 13.7 GPa for HfO2 and TiO2, respectively. The results of the scratch resistance showed that thin films with proper material composition can be used as protective coatings in optical devices.

  12. Modeling of the effect of intentionally introduced traps on hole transport in single-crystal rubrene

    KAUST Repository

    Dacuñ a, Javier; Desai, Amit; Xie, Wei; Salleo, Alberto

    2014-01-01

    Defects have been intentionally introduced in a rubrene single crystal by means of two different mechanisms: ultraviolet ozone (UVO) exposure and x-ray irradiation. A complete drift-diffusion model based on the mobility edge (ME) concept, which takes into account asymmetries and nonuniformities in the semiconductor, is used to estimate the energetic and spatial distribution of trap states. The trap distribution for pristine devices can be decomposed into two well defined regions: a shallow region ascribed to structural disorder and a deeper region ascribed to defects. UVO and x ray increase the hole trap concentration in the semiconductor with different energetic and spatial signatures. The former creates traps near the top surface in the 0.3-0.4 eV region, while the latter induces a wider distribution of traps extending from the band edge with a spatial distribution that peaks near the top and bottom interfaces. In addition to inducing hole trap states in the transport gap, both processes are shown to reduce the mobility with respect to a pristine crystal. © 2014 American Physical Society.

  13. Modeling of the effect of intentionally introduced traps on hole transport in single-crystal rubrene

    KAUST Repository

    Dacuña, Javier

    2014-06-05

    Defects have been intentionally introduced in a rubrene single crystal by means of two different mechanisms: ultraviolet ozone (UVO) exposure and x-ray irradiation. A complete drift-diffusion model based on the mobility edge (ME) concept, which takes into account asymmetries and nonuniformities in the semiconductor, is used to estimate the energetic and spatial distribution of trap states. The trap distribution for pristine devices can be decomposed into two well defined regions: a shallow region ascribed to structural disorder and a deeper region ascribed to defects. UVO and x ray increase the hole trap concentration in the semiconductor with different energetic and spatial signatures. The former creates traps near the top surface in the 0.3-0.4 eV region, while the latter induces a wider distribution of traps extending from the band edge with a spatial distribution that peaks near the top and bottom interfaces. In addition to inducing hole trap states in the transport gap, both processes are shown to reduce the mobility with respect to a pristine crystal. © 2014 American Physical Society.

  14. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

    International Nuclear Information System (INIS)

    Yurchuk, Ekaterina

    2015-01-01

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  15. First observation of spin flips with a single proton stored in a cryogenic Penning trap

    International Nuclear Information System (INIS)

    Ulmer, Stefan

    2011-01-01

    In this thesis the very first observation of spin transitions of a single proton stored in a cryogenic double-Penning trap is presented. The experimental observation of spin transitions is based on the continuous Stern-Gerlach effect, which couples the spin of the single trapped proton to its axial eigenfrequency, by means of an inhomogeneous magnetic field. A spin transition causes a change of the axial frequency, which can be measured non-destructively. Due to the tiny magnetic moment of the proton, the direct detection of proton spin-flips is an exceeding challenge. To achieve spin-flip resolution, the proton was stored in the largest magnetic field inhomogeneity, which has ever been superimposed to a Penning trap, and its axial frequency was detected non-destructively. Therefore, superconducting detection systems with ultrahigh-sensitivity were developed, allowing the direct observation of the single trapped proton, as well as the high-precision determination of its eigenfrequencies. Based on novel experimental methods, which were developed in the framework of this thesis, the axial frequency of the particle was stabilized to a level, where the observation of single-proton spin-flips is possible, which was demonstrated. This experimental success is one of the most important steps towards the high-precision determination of the magnetic moment of the free proton. With the very first observation of spin transitions with a single trapped proton, a highly exciting perspective opens. All experimental techniques which were developed in this thesis can be directly applied to the antiproton. Thus, the first high-precision measurement of the magnetic moment of the antiproton becomes possible. This will provide a new high-precision test of the matterantimatter symmetry. (orig.)

  16. Single-atom trapping and transport in DMD-controlled optical tweezers

    Science.gov (United States)

    Stuart, Dustin; Kuhn, Axel

    2018-02-01

    We demonstrate the trapping and manipulation of single neutral atoms in reconfigurable arrays of optical tweezers. Our approach offers unparalleled speed by using a Texas instruments digital micro-mirror device as a holographic amplitude modulator with a frame rate of 20 000 per second. We show the trapping of static arrays of up to 20 atoms, as well as transport of individually selected atoms over a distance of 25 μm with laser cooling and 4 μm without. We discuss the limitations of the technique and the scope for technical improvements.

  17. Evidence for shallow positron traps in a neutron-irradiated Al single crystal

    International Nuclear Information System (INIS)

    Schultz, P.J.; MacKenzie, I.K.; Lynn, K.G.; West, R.N.; Snead, C.L. Jr.

    1982-01-01

    Variable energy positrons have been used to determine the dependence on temperature of positron diffusion out of a neutron-irradiated single crystal of Al. The results are interpreted in the context of a one-dimensional diffusion model which includes bulk annihilations as well as trapping at voids and other microstructural defects in the bulk material by way of a removal rate kappa/sub eff/ of freely diffusing positrons. The data show a strongly negative dependence on temperature below 125 0 K for kappa/sub eff/, indicating the presence of some additional phenomenon which we attribute to positron localization in shallow, presumably radiation-induced, traps in the crystal

  18. Dynamics of a single ion in a perturbed Penning trap: Octupolar perturbation

    International Nuclear Information System (INIS)

    Lara, Martin; Salas, J. Pablo

    2004-01-01

    Imperfections in the design or implementation of Penning traps may give rise to electrostatic perturbations that introduce nonlinearities in the dynamics. In this paper we investigate, from the point of view of classical mechanics, the dynamics of a single ion trapped in a Penning trap perturbed by an octupolar perturbation. Because of the axial symmetry of the problem, the system has two degrees of freedom. Hence, this model is ideal to be managed by numerical techniques like continuation of families of periodic orbits and Poincare surfaces of section. We find that, through the variation of the two parameters controlling the dynamics, several periodic orbits emanate from two fundamental periodic orbits. This process produces important changes (bifurcations) in the phase space structure leading to chaotic behavior

  19. Effect of annealing on structural changes and oxygen diffusion in amorphous HfO2 using classical molecular dynamics

    Science.gov (United States)

    Shen, Wenqing; Kumari, Niru; Gibson, Gary; Jeon, Yoocharn; Henze, Dick; Silverthorn, Sarah; Bash, Cullen; Kumar, Satish

    2018-02-01

    Non-volatile memory is a promising alternative to present memory technologies. Oxygen vacancy diffusion has been widely accepted as one of the reasons for the resistive switching mechanism of transition-metal-oxide based resistive random access memory. In this study, molecular dynamics simulation is applied to investigate the diffusion coefficient and activation energy of oxygen in amorphous hafnia. Two sets of empirical potential, Charge-Optimized Many-Body (COMB) and Morse-BKS (MBKS), were considered to investigate the structural and diffusion properties at different temperatures. COMB predicts the activation energy of 0.53 eV for the temperature range of 1000-2000 K, while MBKS predicts 2.2 eV at high temperature (1600-2000 K) and 0.36 eV at low temperature (1000-1600 K). Structural changes and appearance of nano-crystalline phases with increasing temperature might affect the activation energy of oxygen diffusion predicted by MBKS, which is evident from the change in coordination number distribution and radial distribution function. None of the potentials make predictions that are fully consistent with density functional theory simulations of both the structure and diffusion properties of HfO2. This suggests the necessity of developing a better multi-body potential that considers charge exchange.

  20. Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

    Science.gov (United States)

    Winkowski, P.; Marszałek, Konstanty W.

    2013-07-01

    Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

  1. A thorough investigation of the progressive reset dynamics in HfO2-based resistive switching structures

    International Nuclear Information System (INIS)

    Lorenzi, P.; Rao, R.; Irrera, F.; Suñé, J.; Miranda, E.

    2015-01-01

    According to previous reports, filamentary electron transport in resistive switching HfO 2 -based metal-insulator-metal structures can be modeled using a diode-like conduction mechanism with a series resistance. Taking the appropriate limits, the model allows simulating the high (HRS) and low (LRS) resistance states of the devices in terms of exponential and linear current-voltage relationships, respectively. In this letter, we show that this simple equivalent circuit approach can be extended to represent the progressive reset transition between the LRS and HRS if a generalized logistic growth model for the pre-exponential diode current factor is considered. In this regard, it is demonstrated here that a Verhulst logistic model does not provide accurate results. The reset dynamics is interpreted as the sequential deactivation of multiple conduction channels spanning the dielectric film. Fitting results for the current-voltage characteristics indicate that the voltage sweep rate only affects the deactivation rate of the filaments without altering the main features of the switching dynamics

  2. Simultaneous diamagnetic and magnetic particle trapping in ferrofluid microflows via a single permanent magnet.

    Science.gov (United States)

    Zhou, Yilong; Kumar, Dhileep Thanjavur; Lu, Xinyu; Kale, Akshay; DuBose, John; Song, Yongxin; Wang, Junsheng; Li, Dongqing; Xuan, Xiangchun

    2015-07-01

    Trapping and preconcentrating particles and cells for enhanced detection and analysis are often essential in many chemical and biological applications. Existing methods for diamagnetic particle trapping require the placement of one or multiple pairs of magnets nearby the particle flowing channel. The strong attractive or repulsive force between the magnets makes it difficult to align and place them close enough to the channel, which not only complicates the device fabrication but also restricts the particle trapping performance. This work demonstrates for the first time the use of a single permanent magnet to simultaneously trap diamagnetic and magnetic particles in ferrofluid flows through a T-shaped microchannel. The two types of particles are preconcentrated to distinct locations of the T-junction due to the induced negative and positive magnetophoretic motions, respectively. Moreover, they can be sequentially released from their respective trapping spots by simply increasing the ferrofluid flow rate. In addition, a three-dimensional numerical model is developed, which predicts with a reasonable agreement the trajectories of diamagnetic and magnetic particles as well as the buildup of ferrofluid nanoparticles.

  3. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

    2016-09-15

    In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

  4. Simultaneous diamagnetic and magnetic particle trapping in ferrofluid microflows via a single permanent magnet

    Science.gov (United States)

    Zhou, Yilong; Kumar, Dhileep Thanjavur; Lu, Xinyu; Kale, Akshay; DuBose, John; Song, Yongxin; Wang, Junsheng; Li, Dongqing; Xuan, Xiangchun

    2015-01-01

    Trapping and preconcentrating particles and cells for enhanced detection and analysis are often essential in many chemical and biological applications. Existing methods for diamagnetic particle trapping require the placement of one or multiple pairs of magnets nearby the particle flowing channel. The strong attractive or repulsive force between the magnets makes it difficult to align and place them close enough to the channel, which not only complicates the device fabrication but also restricts the particle trapping performance. This work demonstrates for the first time the use of a single permanent magnet to simultaneously trap diamagnetic and magnetic particles in ferrofluid flows through a T-shaped microchannel. The two types of particles are preconcentrated to distinct locations of the T-junction due to the induced negative and positive magnetophoretic motions, respectively. Moreover, they can be sequentially released from their respective trapping spots by simply increasing the ferrofluid flow rate. In addition, a three-dimensional numerical model is developed, which predicts with a reasonable agreement the trajectories of diamagnetic and magnetic particles as well as the buildup of ferrofluid nanoparticles. PMID:26221197

  5. Observation of Entanglement of a Single Photon with a Trapped Atom

    International Nuclear Information System (INIS)

    Volz, Juergen; Weber, Markus; Schlenk, Daniel; Rosenfeld, Wenjamin; Vrana, Johannes; Saucke, Karen; Kurtsiefer, Christian; Weinfurter, Harald

    2006-01-01

    We report the observation of entanglement between a single trapped atom and a single photon at a wavelength suitable for low-loss communication over large distances, thereby achieving a crucial step towards long range quantum networks. To verify the entanglement, we introduce a single atom state analysis. This technique is used for full state tomography of the atom-photon qubit pair. The detection efficiency and the entanglement fidelity are high enough to allow in a next step the generation of entangled atoms at large distances, ready for a final loophole-free Bell experiment

  6. The temporal evolution process from fluorescence bleaching to clean Raman spectra of single solid particles optically trapped in air

    Science.gov (United States)

    Gong, Zhiyong; Pan, Yong-Le; Videen, Gorden; Wang, Chuji

    2017-12-01

    We observe the entire temporal evolution process of fluorescence and Raman spectra of single solid particles optically trapped in air. The spectra initially contain strong fluorescence with weak Raman peaks, then the fluorescence was bleached within seconds, and finally only the clean Raman peaks remain. We construct an optical trap using two counter-propagating hollow beams, which is able to stably trap both absorbing and non-absorbing particles in air, for observing such temporal processes. This technique offers a new method to study dynamic changes in the fluorescence and Raman spectra from a single optically trapped particle in air.

  7. Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

    Science.gov (United States)

    Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

    2011-05-13

    The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.

  8. Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface

    International Nuclear Information System (INIS)

    Zafar, Sufi; D'Emic, Christopher; Afzali, Ali; Fletcher, Benjamin; Zhu, Y; Ning, Tak

    2011-01-01

    Silicon nanowire field effect transistor sensors with SiO 2 /HfO 2 as the gate dielectric sensing surface are fabricated using a top down approach. These sensors are optimized for pH sensing with two key characteristics. First, the pH sensitivity is shown to be independent of buffer concentration. Second, the observed pH sensitivity is enhanced and is equal to the Nernst maximum sensitivity limit of 59 mV/pH with a corresponding subthreshold drain current change of ∼ 650%/pH. These two enhanced pH sensing characteristics are attributed to the use of HfO 2 as the sensing surface and an optimized fabrication process compatible with silicon processing technology.

  9. Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface.

    Science.gov (United States)

    Zafar, Sufi; D'Emic, Christopher; Afzali, Ali; Fletcher, Benjamin; Zhu, Y; Ning, Tak

    2011-10-07

    Silicon nanowire field effect transistor sensors with SiO(2)/HfO(2) as the gate dielectric sensing surface are fabricated using a top down approach. These sensors are optimized for pH sensing with two key characteristics. First, the pH sensitivity is shown to be independent of buffer concentration. Second, the observed pH sensitivity is enhanced and is equal to the Nernst maximum sensitivity limit of 59 mV/pH with a corresponding subthreshold drain current change of ∼ 650%/pH. These two enhanced pH sensing characteristics are attributed to the use of HfO(2) as the sensing surface and an optimized fabrication process compatible with silicon processing technology.

  10. Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

    International Nuclear Information System (INIS)

    Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

    2011-01-01

    Thermally driven atomic transport in HfO 2 /GeO 2 /substrate structures on Ge(001) and Si(001) was investigated in N 2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO 2 /Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO 2 /GeO 2 stacks are stable only if isolated from the Ge substrate.

  11. Ab initio study of mechanical and thermo-acoustic properties of tough ceramics: applications to HfO2 in its cubic and orthorhombic phase

    International Nuclear Information System (INIS)

    Ponce, C A; Casali, R A; Caravaca, M A

    2008-01-01

    By means of the ab initio all-electron new full-potential linear-muffin-tin orbitals method, calculations were made for elastic constants C 11 , C 12 and C 44 for Si, ZrO 2 and HfO 2 in their cubic phase, and constants C 11 , C 22 , C 33 , C 12 , C 13 , C 23 , C 44 , C 55 and C 66 for HfO 2 in its orthorhombic phase. Using the Voigt and Reuss theory, estimations were made for polycrystals of their bulk, shear and Young moduli, and Poisson coefficients. The speed of elastic wave propagations and Debye temperatures were estimated for polycrystals built from Si and the above mentioned compounds. The semicore 4f 14 electrons should be included in the valence set of Hf atom in this all-electron approach if accurate results for elastic properties under pressures are looked for

  12. Optical trapping and Raman spectroscopy of single nanostructures using standing-wave Raman tweezers

    Science.gov (United States)

    Wu, Mu-ying; He, Lin; Chen, Gui-hua; Yang, Guang; Li, Yong-qing

    2017-08-01

    Optical tweezers integrated with Raman spectroscopy allows analyzing a single trapped micro-particle, but is generally less effective for individual nano-sized objects in the 10-100 nm range. The main challenge is the weak gradient force on nanoparticles that is insufficient to overcome the destabilizing effect of scattering force and Brownian motion. Here, we present standing-wave Raman tweezers for stable trapping and sensitive characterization of single isolated nanostructures with a low laser power by combining a standing-wave optical trap (SWOT) with confocal Raman spectroscopy. This scheme has stronger intensity gradients and balanced scattering forces, and thus is more stable and sensitive in measuring nanoparticles in liquid with 4-8 fold increase in the Raman signals. It can be used to analyze many nanoparticles that cannot be measured with single-beam Raman tweezers, including individual single-walled carbon nanotubes (SWCNT), graphene flakes, biological particles, polystyrene beads (100 nm), SERS-active metal nanoparticles, and high-refractive semiconductor nanoparticles with a low laser power of a few milliwatts. This would enable sorting and characterization of specific SWCNTs and other nanoparticles based on their increased Raman fingerprints.

  13. Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

    Science.gov (United States)

    Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

    2018-03-01

    In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

  14. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    International Nuclear Information System (INIS)

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

    2015-01-01

    Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

  15. Structure and properties of a model conductive filament/host oxide interface in HfO2-based ReRAM

    Science.gov (United States)

    Padilha, A. C. M.; McKenna, K. P.

    2018-04-01

    Resistive random-access memory (ReRAM) is a promising class of nonvolatile memory capable of storing information via its resistance state. In the case of hafnium oxide-based devices, experimental evidence shows that a conductive oxygen-deficient filament is formed and broken inside of the device by oxygen migration, leading to switching of its resistance state. However, little is known about the nature of this conductive phase, its interface with the host oxide, or the associated interdiffusion of oxygen, presenting a challenge to understanding the switching mechanism and device properties. To address these problems, we present atomic-scale first-principles simulations of a prototypical conductive phase (HfO), the electronic properties of its interface with HfO2, as well as stability with respect to oxygen diffusion across the interface. We show that the conduction-band offset between HfO and HfO2 is 1.3 eV, smaller than typical electrode-HfO2 band offsets, suggesting that positive charging and band bending should occur at the conductive filament-HfO2 interface. We also show that transfer of oxygen across the interface, from HfO2 into HfO, costs around 1.2 eV per atom and leads to a gradual opening of the HfO band gap, and hence disruption of the electrical conductivity. These results provide invaluable insights into understanding the switching mechanism for HfO2-based ReRAM.

  16. Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Wu, You-Lin; Liao, Chun-Wei; Ling, Jing-Jenn

    2014-01-01

    The electrical characterization of HfO 2 /ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO 2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO 2 /ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

  17. Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

    Directory of Open Access Journals (Sweden)

    Atan N.

    2016-01-01

    Full Text Available Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO2 was used as the gate dielectric ad TiO2 was used as the gate material. The transistor HfO2/TiSi2 18-nm PMOS was invented using SILVACO TCAD. Ion implantation was adopted in the fabrication process for the method’s practicality and ability to be used to suppress short channel effects. The study involved ion implantation methods: compensation implantation, halo implantation energy, halo tilt, and source–drain implantation. Taguchi method is the best optimization process for a threshold voltage of HfO2/TiSi2 18-nm PMOS. In this case, the method adopted was Taguchi orthogonal array L9. The process parameters (ion implantations and noise factors were evaluated by examining the Taguchi’s signal-to-noise ratio (SNR and nominal-the-best for the threshold voltage (VTH. After optimization, the result showed that the VTH value of the 18-nm PMOS device was -0.291339.

  18. Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction

    Science.gov (United States)

    Dong, Zhipeng; Cao, Xi; Wu, Tong; Guo, Jing

    2018-03-01

    Ferroelectric tunnel junctions (FTJs) have been intensively explored for future low power data storage and information processing applications. Among various ferroelectric (FE) materials studied, HfO2 and H0.5Zr0.5O2 (HZO) have the advantage of CMOS process compatibility. The validity of the simple effective mass approximation, for describing the tunneling process in these materials, is examined by computing the complex band structure from ab initio simulations. The results show that the simple effective mass approximation is insufficient to describe the tunneling current in HfO2 and HZO materials, and quantitative accurate descriptions of the complex band structures are indispensable for calculation of the tunneling current. A compact k . p Hamiltonian is parameterized to and validated by ab initio complex band structures, which provides a method for efficiently and accurately computing the tunneling current in HfO2 and HZO. The device characteristics of a metal/FE/metal structure and a metal/FE/semiconductor (M-F-S) structure are investigated by using the non-equilibrium Green's function formalism with the parameterized effective Hamiltonian. The result shows that the M-F-S structure offers a larger resistance window due to an extra barrier in the semiconductor region at off-state. A FTJ utilizing M-F-S structure is beneficial for memory design.

  19. High-throughput identification of higher-κ dielectrics from an amorphous N2-doped HfO2–TiO2 library

    International Nuclear Information System (INIS)

    Chang, K.-S.; Lu, W.-C.; Wu, C.-Y.; Feng, H.-C.

    2014-01-01

    Highlights: • Amorphous N 2 -doped HfO 2 –TiO 2 libraries were fabricated using sputtering. • Structure and quality of the dielectric and interfacial layers were investigated. • κ (54), J L < 10 −6 A/cm 2 , and equivalent oxide thickness (1 nm) were identified. - Abstract: High-throughput sputtering was used to fabricate high-quality, amorphous, thin HfO 2 –TiO 2 and N 2 -doped HfO 2 –TiO 2 (HfON–TiON) gate dielectric libraries. Electron probe energy dispersive spectroscopy was used to investigate the structures, compositions, and qualities of the dielectric and interfacial layers of these libraries to determine their electrical properties. A κ value of approximately 54, a leakage current density <10 −6 A/cm 2 , and an equivalent oxide thickness of approximately 1 nm were identified in an HfON–TiON library within a composition range of 68–80 at.% Ti. This library exhibits promise for application in highly advanced metal–oxide–semiconductor (higher-κ) gate stacks

  20. A generalized Jaynes-Cummings model: The relativistic parametric amplifier and a single trapped ion

    Energy Technology Data Exchange (ETDEWEB)

    Ojeda-Guillén, D., E-mail: dojedag@ipn.mx [Escuela Superior de Cómputo, Instituto Politécnico Nacional, Av. Juan de Dios Bátiz esq. Av. Miguel Othón de Mendizábal, Col. Lindavista, Delegación Gustavo A. Madero, C.P. 07738 Ciudad de México (Mexico); Mota, R. D. [Escuela Superior de Ingeniería Mecánica y Eléctrica, Unidad Culhuacán, Instituto Politécnico Nacional, Av. Santa Ana No. 1000, Col. San Francisco Culhuacán, Delegación Coyoacán, C.P. 04430 Ciudad de México (Mexico); Granados, V. D. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Ed. 9, Unidad Profesional Adolfo López Mateos, Delegación Gustavo A. Madero, C.P. 07738 Ciudad de México (Mexico)

    2016-06-15

    We introduce a generalization of the Jaynes-Cummings model and study some of its properties. We obtain the energy spectrum and eigenfunctions of this model by using the tilting transformation and the squeezed number states of the one-dimensional harmonic oscillator. As physical applications, we connect this new model to two important and novelty problems: the relativistic parametric amplifier and the quantum simulation of a single trapped ion.

  1. Particle trapping in 3-D using a single fiber probe with an annular light distribution.

    Science.gov (United States)

    Taylor, R; Hnatovsky, C

    2003-10-20

    A single optical fiber probe has been used to trap a solid 2 ìm diameter glass bead in 3-D in water. Optical confinement in 2-D was produced by the annular light distribution emerging from a selectively chemically etched, tapered, hollow tipped metalized fiber probe. Confinement of the bead in 3-D was achieved by balancing an electrostatic force of attraction towards the tip and the optical scattering force pushing the particle away from the tip.

  2. Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area.

    Science.gov (United States)

    Yoon, Jung Ho; Yoo, Sijung; Song, Seul Ji; Yoon, Kyung Jean; Kwon, Dae Eun; Kwon, Young Jae; Park, Tae Hyung; Kim, Hye Jin; Shao, Xing Long; Kim, Yumin; Hwang, Cheol Seong

    2016-07-20

    To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) performance and an electroforming-free, self-rectifying, low-power-consumption, multilevel-switching, and easy fabrication process with a deep sub-μm(2) cell area. In this work, a Pt/Ta2O5/HfO2-x/TiN RS memory cell fabricated in the form of a vertical-type structure was presented as a feasible contender to meet the above requirements. While the fundamental RS characteristics of this material based on the electron trapping/detrapping mechanisms have been reported elsewhere, the influence of the cell scaling size to 0.34 μm(2) on the RS performance by adopting the vertical integration scheme was carefully examined in this work. The smaller cell area provided much better switching uniformity while all the other benefits of this specific material system were preserved. Using the overstressing technique, the nature of RS through the localized conducting path was further examined, which elucidated the fundamental difference between the present material system and the general ionic-motion-related bipolar RS mechanism.

  3. Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

    International Nuclear Information System (INIS)

    Zhang, R.; Huang, P.-C.; Taoka, N.; Yokoyama, M.; Takenaka, M.; Takagi, S.

    2016-01-01

    We have demonstrated a low temperature formation (300 °C) of higher-k HfO 2 using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO x interfacial layer. It is found that the cubic phase is dominant in the HfO 2 film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO 2 film on a 1-nm-thick GeO x form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO 2 can be induced by the formation of six-fold crystalline GeO x structures in the underlying GeO x interfacial layer

  4. A microfluidic device integrating plasmonic nanodevices for Raman spectroscopy analysis on trapped single living cells

    KAUST Repository

    Perozziello, Gerardo

    2013-11-01

    In this work we developed a microfluidic device integrating nanoplasmonic devices combined with fluidic trapping regions. The microfuidic traps allow to capture single cells in areas where plasmonic sensors are placed. In this way it is possible to perform Enhanced Raman analysis on the cell membranes. Moreover, by changing direction of the flux it is possible to change the orientation of the cell in the trap, so that it is possible to analyze different points of the membrane of the same cell. We shows an innovative procedure to fabricate and assembly the microfluidic device which combine photolithography, focused ion beam machining, and hybrid bonding between a polymer substrate and lid of Calcium fluoride. This procedure is compatible with the fabrication of the plasmonic sensors in close proximity of the microfluidic traps. Moreover, the use of Calcium fluoride as lid allows full compatibility with Raman measurements producing negligible Raman background signal and avoids Raman artifacts. Finally, we performed Raman analysis on cells to monitor their oxidative stress under particular non physiological conditions. © 2013 Elsevier B.V. All rights reserved.

  5. A microfluidic device integrating plasmonic nanodevices for Raman spectroscopy analysis on trapped single living cells

    KAUST Repository

    Perozziello, Gerardo; Catalano, Rossella; Francardi, Marco; Rondanina, Eliana; Pardeo, Francesca; De Angelis, Francesco De; Malara, Natalia Maria; Candeloro, Patrizio; Morrone, Giovanni; Di Fabrizio, Enzo M.

    2013-01-01

    In this work we developed a microfluidic device integrating nanoplasmonic devices combined with fluidic trapping regions. The microfuidic traps allow to capture single cells in areas where plasmonic sensors are placed. In this way it is possible to perform Enhanced Raman analysis on the cell membranes. Moreover, by changing direction of the flux it is possible to change the orientation of the cell in the trap, so that it is possible to analyze different points of the membrane of the same cell. We shows an innovative procedure to fabricate and assembly the microfluidic device which combine photolithography, focused ion beam machining, and hybrid bonding between a polymer substrate and lid of Calcium fluoride. This procedure is compatible with the fabrication of the plasmonic sensors in close proximity of the microfluidic traps. Moreover, the use of Calcium fluoride as lid allows full compatibility with Raman measurements producing negligible Raman background signal and avoids Raman artifacts. Finally, we performed Raman analysis on cells to monitor their oxidative stress under particular non physiological conditions. © 2013 Elsevier B.V. All rights reserved.

  6. Ab initio localized basis set study of structural parameters and elastic properties of HfO2 polymorphs

    International Nuclear Information System (INIS)

    Caravaca, M A; Casali, R A

    2005-01-01

    The SIESTA approach based on pseudopotentials and a localized basis set is used to calculate the electronic, elastic and equilibrium properties of P 2 1 /c, Pbca, Pnma, Fm3m, P4 2 nmc and Pa3 phases of HfO 2 . Using separable Troullier-Martins norm-conserving pseudopotentials which include partial core corrections for Hf, we tested important physical properties as a function of the basis set size, grid size and cut-off ratio of the pseudo-atomic orbitals (PAOs). We found that calculations in this oxide with the LDA approach and using a minimal basis set (simple zeta, SZ) improve calculated phase transition pressures with respect to the double-zeta basis set and LDA (DZ-LDA), and show similar accuracy to that determined with the PPPW and GGA approach. Still, the equilibrium volumes and structural properties calculated with SZ-LDA compare better with experiments than the GGA approach. The bandgaps and elastic and structural properties calculated with DZ-LDA are accurate in agreement with previous state of the art ab initio calculations and experimental evidence and cannot be improved with a polarized basis set. These calculated properties show low sensitivity to the PAO localization parameter range between 40 and 100 meV. However, this is not true for the relative energy, which improves upon decrease of the mentioned parameter. We found a non-linear behaviour in the lattice parameters with pressure in the P 2 1 /c phase, showing a discontinuity of the derivative of the a lattice parameter with respect to external pressure, as found in experiments. The common enthalpy values calculated with the minimal basis set give pressure transitions of 3.3 and 10.8?GPa for P2 1 /c → Pbca and Pbca → Pnma, respectively, in accordance with different high pressure experimental values

  7. Trapping, manipulation and rapid rotation of NBD-C8 fluorescent single microcrystals in optical tweezers

    International Nuclear Information System (INIS)

    GALAUP, Jean-Pierre; RODRIGUEZ-OTAZO, Mariela; AUGIER-CALDERIN, Angel; LAMERE; Jean-Francois; FERY-FORGUES, Suzanne

    2009-01-01

    We have built an optical tweezers experiment based on an inverted microscope to trap and manipulate single crystals of micro or sub-micrometer size made from fluorescent molecules of 4-octylamino-7-nitrobenzoxadiazole (NBD-C8). These single crystals have parallelepiped shapes and exhibit birefringence properties evidenced through optical experiments between crossed polarizers in a polarizing microscope. The crystals are uniaxial with their optical axis oriented along their largest dimension. Trapped in the optical trap, the organic micro-crystals are oriented in such a way that their long axis is along the direction of the beam propagation, and their short axis follows the direction of the linear polarization. Therefore, with linearly polarized light, simply rotating the light polarization can orient the crystal. When using circularly or only elliptically polarized light, the crystal can spontaneously rotate and reach rotation speed of several hundreds of turns per second. A surprising result has been observed: when the incident power is growing up, the rotation speed increases to reach a maximum value and then decreases even when the power is still growing up. Moreover, this evolution is irreversible. Different possible explanations can be considered. The development of a 3D control of the crystals by dynamical holography using liquid crystal spatial modulators will be presented and discussed on the basis of the most recent results obtained. (Author)

  8. Study of a Microfluidic Chip Integrating Single Cell Trap and 3D Stable Rotation Manipulation

    Directory of Open Access Journals (Sweden)

    Liang Huang

    2016-08-01

    Full Text Available Single cell manipulation technology has been widely applied in biological fields, such as cell injection/enucleation, cell physiological measurement, and cell imaging. Recently, a biochip platform with a novel configuration of electrodes for cell 3D rotation has been successfully developed by generating rotating electric fields. However, the rotation platform still has two major shortcomings that need to be improved. The primary problem is that there is no on-chip module to facilitate the placement of a single cell into the rotation chamber, which causes very low efficiency in experiment to manually pipette single 10-micron-scale cells into rotation position. Secondly, the cell in the chamber may suffer from unstable rotation, which includes gravity-induced sinking down to the chamber bottom or electric-force-induced on-plane movement. To solve the two problems, in this paper we propose a new microfluidic chip with manipulation capabilities of single cell trap and single cell 3D stable rotation, both on one chip. The new microfluidic chip consists of two parts. The top capture part is based on the least flow resistance principle and is used to capture a single cell and to transport it to the rotation chamber. The bottom rotation part is based on dielectrophoresis (DEP and is used to 3D rotate the single cell in the rotation chamber with enhanced stability. The two parts are aligned and bonded together to form closed channels for microfluidic handling. Using COMSOL simulation and preliminary experiments, we have verified, in principle, the concept of on-chip single cell traps and 3D stable rotation, and identified key parameters for chip structures, microfluidic handling, and electrode configurations. The work has laid a solid foundation for on-going chip fabrication and experiment validation.

  9. Preparation of single rice chromosome for construction of a DNA library using a laser microbeam trap.

    Science.gov (United States)

    Liu, Xiaohui; Wang, Haowei; Li, Yinmei; Tang, Yesheng; Liu, Yilei; Hu, Xin; Jia, Peixin; Ying, Kai; Feng, Qi; Guan, Jianping; Jin, Chaoqing; Zhang, Lei; Lou, Liren; Zhou, Zhuan; Han, Bin

    2004-04-29

    We report the development of a laser micromanipulation system and its application in the isolation of individual rice chromosomes directly from a metaphase cell. Microdissection and flow sorting are two major methods for the isolation of single chromosome. These methods are dependent on the techniques of chromosome spread and chromosome suspension, respectively. In the development of this system, we avoided using chromosome spread and cell suspension was used instead. The cell wall of metaphase rice cell was cut by optical scissors. The released single chromosome was captured by an optical trap and transported to an area without cell debris. The isolated single chromosome was then collected and specific library was constructed by linker adaptor PCR. The average insert size of the library was about 300 bp. Two hundred inserts of chromosome 4 library were sequenced, and 96.5% were aligned to the corresponding sequences of rice chromosome 4. These results suggest the possible application of this method for the preparation of other subcellular structures and for the cloning of single macromolecule through a laser microbeam trap.

  10. Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals

    KAUST Repository

    Shi, Dong

    2015-01-29

    The fundamental properties and ultimate performance limits of organolead trihalide MAPbX3(MA = CH3NH3 +; X = Br- or I- ) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics.We observed exceptionally low trap-state densities on the order of 109 to 1010 per cubic centimeter in MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.

  11. Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals

    KAUST Repository

    Shi, Dong; Adinolfi, Valerio; Comin, Riccardo; Yuan, Mingjian; Alarousu, Erkki; Buin, Andrei K.; Chen, Yin; Hoogland, Sjoerd H.; Rothenberger, Alexander; Katsiev, Khabiboulakh; Losovyj, Yaroslav B.; Zhang, Xin; Dowben, Peter A.; Mohammed, Omar F.; Sargent, E. H.; Bakr, Osman

    2015-01-01

    The fundamental properties and ultimate performance limits of organolead trihalide MAPbX3(MA = CH3NH3 +; X = Br- or I- ) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics.We observed exceptionally low trap-state densities on the order of 109 to 1010 per cubic centimeter in MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.

  12. Near-field acoustic microbead trapping as remote anchor for single particle manipulation

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Jae Youn [Department of Information and Communication Engineering, Daegu Gyeongbuk Institute of Science and Technology, Daegu (Korea, Republic of); Cheon, Dong Young; Shin, Hyunjune; Kim, Hyun Bin; Lee, Jungwoo, E-mail: jwlee@kw.ac.kr [Department of Electronic Engineering, Kwangwoon University, Seoul (Korea, Republic of)

    2015-05-04

    We recently proposed an analytical model of a two-dimensional acoustic trapping of polystyrene beads in the ray acoustics regime, where a bead diameter is larger than the wavelength used. As its experimental validation, this paper demonstrates the transverse (or lateral) trapping of individual polystyrene beads in the near field of focused ultrasound. A 100 μm bead is immobilized on the central beam axis by a focused sound beam from a 30 MHz single element lithium niobate transducer, after being laterally displaced through hundreds of micrometers. Maximum displacement, a longest lateral distance at which a trapped bead can be directed towards the central axis, is thus measured over a discrete frequency range from 24 MHz to 36 MHz. The displacement data are found to be between 323.7 μm and 470.2 μm, depending on the transducer's driving frequency and input voltage amplitude. The experimental results are compared with their corresponding model values, and their relative errors lie between 0.9% and 3.9%. The results suggest that this remote maneuvering technique may be employed to manipulate individual cells through solid microbeads, provoking certain cellular reactions to localized mechanical disturbance without direct contact.

  13. Near-field acoustic microbead trapping as remote anchor for single particle manipulation

    Science.gov (United States)

    Hwang, Jae Youn; Cheon, Dong Young; Shin, Hyunjune; Kim, Hyun Bin; Lee, Jungwoo

    2015-05-01

    We recently proposed an analytical model of a two-dimensional acoustic trapping of polystyrene beads in the ray acoustics regime, where a bead diameter is larger than the wavelength used. As its experimental validation, this paper demonstrates the transverse (or lateral) trapping of individual polystyrene beads in the near field of focused ultrasound. A 100 μm bead is immobilized on the central beam axis by a focused sound beam from a 30 MHz single element lithium niobate transducer, after being laterally displaced through hundreds of micrometers. Maximum displacement, a longest lateral distance at which a trapped bead can be directed towards the central axis, is thus measured over a discrete frequency range from 24 MHz to 36 MHz. The displacement data are found to be between 323.7 μm and 470.2 μm, depending on the transducer's driving frequency and input voltage amplitude. The experimental results are compared with their corresponding model values, and their relative errors lie between 0.9% and 3.9%. The results suggest that this remote maneuvering technique may be employed to manipulate individual cells through solid microbeads, provoking certain cellular reactions to localized mechanical disturbance without direct contact.

  14. A robust single-beam optical trap for a gram-scale mechanical oscillator.

    Science.gov (United States)

    Altin, P A; Nguyen, T T-H; Slagmolen, B J J; Ward, R L; Shaddock, D A; McClelland, D E

    2017-11-06

    Precise optical control of microscopic particles has been mastered over the past three decades, with atoms, molecules and nano-particles now routinely trapped and cooled with extraordinary precision, enabling rapid progress in the study of quantum phenomena. Achieving the same level of control over macroscopic objects is expected to bring further advances in precision measurement, quantum information processing and fundamental tests of quantum mechanics. However, cavity optomechanical systems dominated by radiation pressure - so-called 'optical springs' - are inherently unstable due to the delayed dynamical response of the cavity. Here we demonstrate a fully stable, single-beam optical trap for a gram-scale mechanical oscillator. The interaction of radiation pressure with thermo-optic feedback generates damping that exceeds the mechanical loss by four orders of magnitude. The stability of the resultant spring is robust to changes in laser power and detuning, and allows purely passive self-locking of the cavity. Our results open up a new way of trapping and cooling macroscopic objects for optomechanical experiments.

  15. Shot-noise-limited monitoring and phase locking of the motion of a single trapped ion.

    Science.gov (United States)

    Bushev, P; Hétet, G; Slodička, L; Rotter, D; Wilson, M A; Schmidt-Kaler, F; Eschner, J; Blatt, R

    2013-03-29

    We perform a high-resolution real-time readout of the motion of a single trapped and laser-cooled Ba+ ion. By using an interferometric setup, we demonstrate a shot-noise-limited measurement of thermal oscillations with a resolution of 4 times the standard quantum limit. We apply the real-time monitoring for phase control of the ion motion through a feedback loop, suppressing the photon recoil-induced phase diffusion. Because of the spectral narrowing in the phase-locked mode, the coherent ion oscillation is measured with a resolution of about 0.3 times the standard quantum limit.

  16. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    Science.gov (United States)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  17. Thermoluminescent and dosimetric properties of anion-defective a-Al2O3 single crystals with filled deep traps

    International Nuclear Information System (INIS)

    Kortov, V.S.; Milman, I.I.; Nikiforov, S.V.

    2002-01-01

    Some new experimental results illustrating the effect of deep traps on luminescent and dosimetric properties of anion-defective single crystals of a-Al 2 O 3 have been described. It was found that deep traps had an electronic origin. They were filled thanks to the photoionisation of F-centres and their filling was accompanied by the conversion of FF+ centres. The experiments revealed an interactive interaction of deep trapping centres. A model taking into account the thermal ionisation of excited states of F-centres was proposed. This model describes the trap filling process and mechanisms of the radio-, photo- and thermoluminescence, TSC and TSEE of the crystals under study. The sensitivity of TLD-500 detectors based on anion-defective a-Al 2 O 3 equalised when deep trapping centres were filled. (author)

  18. Electrical trapping mechanism of single-microparticles in a pore sensor

    Directory of Open Access Journals (Sweden)

    Akihide Arima

    2016-11-01

    Full Text Available Nanopore sensing via resistive pulse technique are utilized as a potent tool to characterize physical and chemical property of single –molecules and –particles. In this article, we studied the influence of particle trajectory to the ionic conductance through a pore. We performed the optical/electrical simultaneous sensing of electrophoretic capture dynamics of single-particles at a pore using a microchannel/nanopore system. We detected ionic current drops synchronous to a fluorescently dyed particle being electrophoretically drawn and become immobilized at a pore in the optical imaging. We also identified anomalous trapping events wherein particles were captured at nanoscale pin-holes formed unintentionally in a SiN membrane that gave rise to relatively small current drops. This method is expected to be a useful platform for testing novel nanopore sensor design wherein current behaves in unpredictable manner.

  19. Photoacoustics of single laser-trapped nanodroplets for the direct observation of nanofocusing in aerosol photokinetics

    Science.gov (United States)

    Cremer, Johannes W.; Thaler, Klemens M.; Haisch, Christoph; Signorell, Ruth

    2016-03-01

    Photochemistry taking place in atmospheric aerosol droplets has a significant impact on the Earth's climate. Nanofocusing of electromagnetic radiation inside aerosols plays a crucial role in their absorption behaviour, since the radiation flux inside the droplet strongly affects the activation rate of photochemically active species. However, size-dependent nanofocusing effects in the photokinetics of small aerosols have escaped direct observation due to the inability to measure absorption signatures from single droplets. Here we show that photoacoustic measurements on optically trapped single nanodroplets provide a direct, broadly applicable method to measure absorption with attolitre sensitivity. We demonstrate for a model aerosol that the photolysis is accelerated by an order of magnitude in the sub-micron to micron size range, compared with larger droplets. The versatility of our technique promises broad applicability to absorption studies of aerosol particles, such as atmospheric aerosols where quantitative photokinetic data are critical for climate predictions.

  20. Electrical and optical 3D modelling of light-trapping single-photon avalanche diode

    Science.gov (United States)

    Zheng, Tianzhe; Zang, Kai; Morea, Matthew; Xue, Muyu; Lu, Ching-Ying; Jiang, Xiao; Zhang, Qiang; Kamins, Theodore I.; Harris, James S.

    2018-02-01

    Single-photon avalanche diodes (SPADs) have been widely used to push the frontier of scientific research (e.g., quantum science and single-molecule fluorescence) and practical applications (e.g., Lidar). However, there is a typical compromise between photon detection efficiency and jitter distribution. The light-trapping SPAD has been proposed to break this trade-off by coupling the vertically incoming photons into a laterally propagating mode while maintaining a small jitter and a thin Si device layer. In this work, we provide a 3D-based optical and electrical model based on practical fabrication conditions and discuss about design parameters, which include surface texturing, photon injection position, device area, and other features.

  1. Experimental Verification of a Jarzynski-Related Information-Theoretic Equality by a Single Trapped Ion.

    Science.gov (United States)

    Xiong, T P; Yan, L L; Zhou, F; Rehan, K; Liang, D F; Chen, L; Yang, W L; Ma, Z H; Feng, M; Vedral, V

    2018-01-05

    Most nonequilibrium processes in thermodynamics are quantified only by inequalities; however, the Jarzynski relation presents a remarkably simple and general equality relating nonequilibrium quantities with the equilibrium free energy, and this equality holds in both the classical and quantum regimes. We report a single-spin test and confirmation of the Jarzynski relation in the quantum regime using a single ultracold ^{40}Ca^{+} ion trapped in a harmonic potential, based on a general information-theoretic equality for a temporal evolution of the system sandwiched between two projective measurements. By considering both initially pure and mixed states, respectively, we verify, in an exact and fundamental fashion, the nonequilibrium quantum thermodynamics relevant to the mutual information and Jarzynski equality.

  2. Long-Distance Single Photon Transmission from a Trapped Ion via Quantum Frequency Conversion

    Science.gov (United States)

    Walker, Thomas; Miyanishi, Koichiro; Ikuta, Rikizo; Takahashi, Hiroki; Vartabi Kashanian, Samir; Tsujimoto, Yoshiaki; Hayasaka, Kazuhiro; Yamamoto, Takashi; Imoto, Nobuyuki; Keller, Matthias

    2018-05-01

    Trapped atomic ions are ideal single photon emitters with long-lived internal states which can be entangled with emitted photons. Coupling the ion to an optical cavity enables the efficient emission of single photons into a single spatial mode and grants control over their temporal shape. These features are key for quantum information processing and quantum communication. However, the photons emitted by these systems are unsuitable for long-distance transmission due to their wavelengths. Here we report the transmission of single photons from a single 40Ca+ ion coupled to an optical cavity over a 10 km optical fiber via frequency conversion from 866 nm to the telecom C band at 1530 nm. We observe nonclassical photon statistics of the direct cavity emission, the converted photons, and the 10 km transmitted photons, as well as the preservation of the photons' temporal shape throughout. This telecommunication-ready system can be a key component for long-distance quantum communication as well as future cloud quantum computation.

  3. Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

    International Nuclear Information System (INIS)

    Ogawa, Shingo; Asahara, Ryohei; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji; Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi

    2015-01-01

    The thermal diffusion of germanium and oxygen atoms in HfO 2 /GeO 2 /Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that 18 O-tracers composing the GeO 2 underlayers diffuse within the HfO 2 overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO 2 also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO 2 surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlO x interlayers between the HfO 2 and GeO 2 layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks

  4. A comparative study of amorphous InGaZnO thin-film transistors with HfOxNy and HfO2 gate dielectrics

    International Nuclear Information System (INIS)

    Zou, Xiao; Tong, Xingsheng; Fang, Guojia; Yuan, Longyan; Zhao, Xingzhong

    2010-01-01

    High-κ HfO x N y and HfO 2 films are applied to amorphous InGaZnO (a-IGZO) devices as gate dielectric using radio-frequency reactive sputtering. The electrical characteristics and reliability of a-IGZO metal–insulator–semiconductor (MIS) capacitors and thin-film transistors (TFTs) are then investigated. Experimental results indicate that the nitrogen incorporation into HfO 2 can effectively improve the interface quality and enhance the reliability of the devices. Electrical properties with an interface-state density of 5.2 × 10 11 eV −1 cm −2 , capacitance equivalent thickness of 1.65 nm, gate leakage current density of 3.4 × 10 −5 A cm −2 at V fb +1 V, equivalent permittivity of 23.6 and hysteresis voltage of 110 mV are obtained for an Al/HfO x N y /a-IGZO MIS capacitor. Superior performance of HfO x N y /a-IGZO TFTs has also been achieved with a low threshold voltage of 0.33 V, a high saturation mobility of 12.1 cm 2 V −1 s −1 and a large on–off current ratio up to 7 × 10 7 (W/L = 500/20 µm) at 3 V

  5. Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

    Science.gov (United States)

    Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

    2016-08-17

    Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

  6. Low-Frequency Noise in Layered ReS2 Field Effect Transistors on HfO2 and Its Application for pH Sensing.

    Science.gov (United States)

    Liao, Wugang; Wei, Wei; Tong, Yu; Chim, Wai Kin; Zhu, Chunxiang

    2018-02-28

    Layered rhenium disulfide (ReS 2 ) field effect transistors (FETs), with thickness ranging from few to dozens of layers, are demonstrated on 20 nm thick HfO 2 /Si substrates. A small threshold voltage of -0.25 V, high on/off current ratio of up to ∼10 7 , small subthreshold swing of 116 mV/dec, and electron carrier mobility of 6.02 cm 2 /V·s are obtained for the two-layer ReS 2 FETs. Low-frequency noise characteristics in ReS 2 FETs are analyzed for the first time, and it is found that the carrier number fluctuation mechanism well describes the flicker (1/f) noise of ReS 2 FETs with different thicknesses. pH sensing using a two-layer ReS 2 FET with HfO 2 as a sensing oxide is then demonstrated with a voltage sensitivity of 54.8 mV/pH and a current sensitivity of 126. The noise characteristics of the ReS 2 FET-based pH sensors are also examined, and a corresponding detection limit of 0.0132 pH is obtained. Our studies suggest the high potential of ReS 2 for future low-power nanoelectronics and biosensor applications.

  7. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  8. A combined electrochemical and optical trapping platform for measuring single cell respiration rates at electrode interfaces

    International Nuclear Information System (INIS)

    Gross, Benjamin J.; El-Naggar, Mohamed Y.

    2015-01-01

    Metal-reducing bacteria gain energy by extracellular electron transfer to external solids, such as naturally abundant minerals, which substitute for oxygen or the other common soluble electron acceptors of respiration. This process is one of the earliest forms of respiration on earth and has significant environmental and technological implications. By performing electron transfer to electrodes instead of minerals, these microbes can be used as biocatalysts for conversion of diverse chemical fuels to electricity. Understanding such a complex biotic-abiotic interaction necessitates the development of tools capable of probing extracellular electron transfer down to the level of single cells. Here, we describe an experimental platform for single cell respiration measurements. The design integrates an infrared optical trap, perfusion chamber, and lithographically fabricated electrochemical chips containing potentiostatically controlled transparent indium tin oxide microelectrodes. Individual bacteria are manipulated using the optical trap and placed on the microelectrodes, which are biased at a suitable oxidizing potential in the absence of any chemical electron acceptor. The potentiostat is used to detect the respiration current correlated with cell-electrode contact. We demonstrate the system with single cell measurements of the dissimilatory-metal reducing bacterium Shewanella oneidensis MR-1, which resulted in respiration currents ranging from 15 fA to 100 fA per cell under our measurement conditions. Mutants lacking the outer-membrane cytochromes necessary for extracellular respiration did not result in any measurable current output upon contact. In addition to the application for extracellular electron transfer studies, the ability to electronically measure cell-specific respiration rates may provide answers for a variety of fundamental microbial physiology questions

  9. A combined electrochemical and optical trapping platform for measuring single cell respiration rates at electrode interfaces.

    Science.gov (United States)

    Gross, Benjamin J; El-Naggar, Mohamed Y

    2015-06-01

    Metal-reducing bacteria gain energy by extracellular electron transfer to external solids, such as naturally abundant minerals, which substitute for oxygen or the other common soluble electron acceptors of respiration. This process is one of the earliest forms of respiration on earth and has significant environmental and technological implications. By performing electron transfer to electrodes instead of minerals, these microbes can be used as biocatalysts for conversion of diverse chemical fuels to electricity. Understanding such a complex biotic-abiotic interaction necessitates the development of tools capable of probing extracellular electron transfer down to the level of single cells. Here, we describe an experimental platform for single cell respiration measurements. The design integrates an infrared optical trap, perfusion chamber, and lithographically fabricated electrochemical chips containing potentiostatically controlled transparent indium tin oxide microelectrodes. Individual bacteria are manipulated using the optical trap and placed on the microelectrodes, which are biased at a suitable oxidizing potential in the absence of any chemical electron acceptor. The potentiostat is used to detect the respiration current correlated with cell-electrode contact. We demonstrate the system with single cell measurements of the dissimilatory-metal reducing bacterium Shewanella oneidensis MR-1, which resulted in respiration currents ranging from 15 fA to 100 fA per cell under our measurement conditions. Mutants lacking the outer-membrane cytochromes necessary for extracellular respiration did not result in any measurable current output upon contact. In addition to the application for extracellular electron transfer studies, the ability to electronically measure cell-specific respiration rates may provide answers for a variety of fundamental microbial physiology questions.

  10. A combined electrochemical and optical trapping platform for measuring single cell respiration rates at electrode interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gross, Benjamin J. [Department of Physics and Astronomy, University of Southern California, 920 Bloom Walk, Los Angeles, California 90089-0484 (United States); El-Naggar, Mohamed Y., E-mail: mnaggar@usc.edu [Department of Physics and Astronomy, University of Southern California, 920 Bloom Walk, Los Angeles, California 90089-0484 (United States); Molecular and Computational Biology Section, Department of Biological Sciences, University of Southern California, Los Angeles, California 90089-0484 (United States); Department of Chemistry, University of Southern California, Los Angeles, California 90089-0484 (United States)

    2015-06-15

    Metal-reducing bacteria gain energy by extracellular electron transfer to external solids, such as naturally abundant minerals, which substitute for oxygen or the other common soluble electron acceptors of respiration. This process is one of the earliest forms of respiration on earth and has significant environmental and technological implications. By performing electron transfer to electrodes instead of minerals, these microbes can be used as biocatalysts for conversion of diverse chemical fuels to electricity. Understanding such a complex biotic-abiotic interaction necessitates the development of tools capable of probing extracellular electron transfer down to the level of single cells. Here, we describe an experimental platform for single cell respiration measurements. The design integrates an infrared optical trap, perfusion chamber, and lithographically fabricated electrochemical chips containing potentiostatically controlled transparent indium tin oxide microelectrodes. Individual bacteria are manipulated using the optical trap and placed on the microelectrodes, which are biased at a suitable oxidizing potential in the absence of any chemical electron acceptor. The potentiostat is used to detect the respiration current correlated with cell-electrode contact. We demonstrate the system with single cell measurements of the dissimilatory-metal reducing bacterium Shewanella oneidensis MR-1, which resulted in respiration currents ranging from 15 fA to 100 fA per cell under our measurement conditions. Mutants lacking the outer-membrane cytochromes necessary for extracellular respiration did not result in any measurable current output upon contact. In addition to the application for extracellular electron transfer studies, the ability to electronically measure cell-specific respiration rates may provide answers for a variety of fundamental microbial physiology questions.

  11. Trapped-ion anomalous diffusion coefficient on the basis of single mode saturation

    International Nuclear Information System (INIS)

    Koshi, Yuji; Hatayama, Akiyoshi; Ogasawara, Masatada.

    1982-03-01

    Expressions of the anomalous diffusion coefficient due to the dissipative trapped ion instability (DTII) are derived for the case with and without the effect of magnetic shear. Derivation is made by taking into account of the single mode saturation of the DTII previously obtained numerically. In the absence of the shear effect, the diffusion coefficient is proportional to #betta#sub(i)a 2 (#betta#sub(i) is the effective collision frequency of the trapped ions and a is the minor radius of a torus) and is much larger than the neoclassical ion heat conductivity. In the presence of the shear effect, the diffusion coefficient is much smaller than the Kadomtsev and Pogutse's value and is the same order of magnitude as the neoclassical ion heat conductivity. Dependences of the diffusion coefficient on the temperature and on the total particle number density are rather complicated due to the additional spectral cut-off, which is introduced to regularize the short wavelength modes in the numerical analysis. (author)

  12. Quantum sensing of the phase-space-displacement parameters using a single trapped ion

    Science.gov (United States)

    Ivanov, Peter A.; Vitanov, Nikolay V.

    2018-03-01

    We introduce a quantum sensing protocol for detecting the parameters characterizing the phase-space displacement by using a single trapped ion as a quantum probe. We show that, thanks to the laser-induced coupling between the ion's internal states and the motion mode, the estimation of the two conjugated parameters describing the displacement can be efficiently performed by a set of measurements of the atomic state populations. Furthermore, we introduce a three-parameter protocol capable of detecting the magnitude, the transverse direction, and the phase of the displacement. We characterize the uncertainty of the two- and three-parameter problems in terms of the Fisher information and show that state projective measurement saturates the fundamental quantum Cramér-Rao bound.

  13. Extending the applicability of an open-ring trap to perform experiments with a single laser-cooled ion

    Energy Technology Data Exchange (ETDEWEB)

    Cornejo, J. M.; Colombano, M.; Doménech, J.; Rodríguez, D., E-mail: danielrodriguez@ugr.es [Departamento de Física Atómica, Molecular y Nuclear, Universidad de Granada, 18071 Granada (Spain); Block, M. [GSI Helmholtzzentrum für Schwerionenforschung GmbH, 64291 Darmstadt (Germany); Helmholtz-Institut Mainz, 55099 Mainz (Germany); Institut für Kernchemie, University of Mainz, 55099 Mainz (Germany); Delahaye, P. [Grand Accélérateur National d’Ions Lourds, 14000 Caen (France)

    2015-10-15

    A special ion trap was initially built up to perform β-ν correlation experiments with radioactive ions. The trap geometry is also well suited to perform experiments with laser-cooled ions, serving for the development of a new type of Penning trap, in the framework of the project TRAPSENSOR at the University of Granada. The goal of this project is to use a single {sup 40}Ca{sup +} ion as detector for single-ion mass spectrometry. Within this project and without any modification to the initial electrode configuration, it was possible to perform Doppler cooling on {sup 40}Ca{sup +} ions, starting from large clouds and reaching single ion sensitivity. This new feature of the trap might be important also for other experiments with ions produced at radioactive ion beam facilities. In this publication, the trap and the laser system will be described, together with their performance with respect to laser cooling applied to large ion clouds down to a single ion.

  14. Detection of individual spin transitions of a single proton confined in a cryogenic Penning trap

    Energy Technology Data Exchange (ETDEWEB)

    Kracke, Holger

    2013-02-27

    The presented experiment for the determination of the magnetic moment of the proton is based on the measurement of the ratio of cyclotron frequency and Larmor frequency of a single proton confined in a cryogenic double-Penning trap. In the course of this thesis, the simultaneous non-destructive measurement of two of the three eigenfrequencies of the proton in thermal equilibrium with corresponding detection systems was demonstrated, which reduces the measurement time of the cyclotron frequency by a factor of two. Furthermore, this thesis presents the first detection of individual spin transitions of a single proton, which allows for the determination of the Larmor frequency. The continuous Stern-Gerlach effect is utilized to couple the magnetic moment to the axial mode of the trapped proton by means of a magnetic bottle. Thus, a spin flip causes a jump of the axial frequency, which can be measured non-destructively with highly-sensitive detection systems. However, not only the spin momentum is coupled to the axial motion but also the angular momentum. Thus, the main experimental challenge is the elimination of energy fluctuations in the radial modes in order to maintain spin flip resolution. Due to systematic studies on the stability of the axial frequency and a complete revision of the experimental setup, this goal was achieved. The spin state of the proton can be determined with very high fidelity for the very first time. Thus, this thesis represents an important step towards a high-precision determination of the magnetic moment of the proton.

  15. Single and dual fiber nano-tip optical tweezers: trapping and analysis

    OpenAIRE

    Decombe , Jean-Baptiste; Huant , Serge; Fick , Jochen

    2013-01-01

    International audience; An original optical tweezers using one or two chemically etched fiber nano-tips is developed. We demonstrate optical trapping of 1 micrometer polystyrene spheres at optical powers down to 2 mW. Harmonic trap potentials were found in the case of dual fiber tweezers by analyzing the trapped particle position fluctuations. The trap stiffness was deduced using three different models. Consistent values of up to 1 fN/nm were found. The stiffness linearly decreases with decre...

  16. Estimation of the spatial distribution of traps using space-charge-limited current measurements in an organic single crystal

    KAUST Repository

    Dacuña, Javier

    2012-09-06

    We used a mobility edge transport model and solved the drift-diffusion equation to characterize the space-charge-limited current of a rubrene single-crystal hole-only diode. The current-voltage characteristics suggest that current is injection-limited at high voltage when holes are injected from the bottom contact (reverse bias). In contrast, the low-voltage regime shows that the current is higher when holes are injected from the bottom contact as compared to hole injection from the top contact (forward bias), which does not exhibit injection-limited current in the measured voltage range. This behavior is attributed to an asymmetric distribution of trap states in the semiconductor, specifically, a distribution of traps located near the top contact. Accounting for a localized trap distribution near the contact allows us to reproduce the temperature-dependent current-voltage characteristics in forward and reverse bias simultaneously, i.e., with a single set of model parameters. We estimated that the local trap distribution contains 1.19×1011 cm -2 states and decays as exp(-x/32.3nm) away from the semiconductor-contact interface. The local trap distribution near one contact mainly affects injection from the same contact, hence breaking the symmetry in the charge transport. The model also provides information of the band mobility, energy barrier at the contacts, and bulk trap distribution with their corresponding confidence intervals. © 2012 American Physical Society.

  17. First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2 high-K gate dielectric

    International Nuclear Information System (INIS)

    Mao, L.F.; Wang, Z.O.

    2008-01-01

    HfO 2 high-K gate dielectric has been used as a new gate dielectric in metal-oxide-semiconductor structures. First-principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of the conduction band is introduced into the bandgap due to the oxygen vacancies. The tunneling current calculations show that the tunneling currents through the gate oxide with different defect density possess the typical characteristic of stress-induced leakage current. Further analysis shows that the location of oxygen vacancies will have a marked effect on the tunneling current. The largest increase in the tunneling current caused by oxygen vacancies comes about at the middle oxide field when defects are located at the middle of the oxide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Influence of phosphorous precursors on spectroscopic properties of Er3+-activated SiO2-HfO2-P2O5 planar waveguides

    International Nuclear Information System (INIS)

    Vasilchenko, I; Carpentiero, A; Chiappini, A; Chiasera, A; Ferrari, M; Vaccari, A; Lukowiak, A; Righini, G C; Vereshagin, V

    2014-01-01

    (70-x)SiO 2 -30HfO 2 -xP 2 O 5 (x= 5, 10 mol %) glass planar waveguides activated by 0.5 mol% Er 3 + ions were prepared by sol-gel route. Several phosphorous precursors have been investigated for the synthesis of a dielectric stable sol useful for the realization of planar waveguides. The waveguides were investigated by different diagnostic techniques. The optical properties such as refractive index, thickness, number of propagating modes and attenuation coefficient were measured at 632.8 and 543.5 nm by prism coupling technique. Transmission measurements were carried out in order to assess the transparency of the deposited films. Photoluminescence measurements and lifetime decay curves of the Er 3 + transition (4 I 13/2 → 4 I 15/2 ) were performed in order to investigate the role of P 2 O 5

  19. Carbon-coated ZnO mat passivation by atomic-layer-deposited HfO2 as an anode material for lithium-ion batteries.

    Science.gov (United States)

    Jung, Mi-Hee

    2017-11-01

    ZnO has had little consideration as an anode material in lithium-ion batteries compared with other transition-metal oxides due to its inherent poor electrical conductivity and large volume expansion upon cycling and pulverization of ZnO-based electrodes. A logical design and facile synthesis of ZnO with well-controlled particle sizes and a specific morphology is essential to improving the performance of ZnO in lithium-ion batteries. In this paper, a simple approach is reported that uses a cation surfactant and a chelating agent to synthesize three-dimensional hierarchical nanostructured carbon-coated ZnO mats, in which the ZnO mats are composed of stacked individual ZnO nanowires and form well-defined nanoporous structures with high surface areas. In order to improve the performance of lithium-ion batteries, HfO 2 is deposited on the carbon-coated ZnO mat electrode via atomic layer deposition. Lithium-ion battery devices based on the carbon-coated ZnO mat passivation by atomic layer deposited HfO 2 exhibit an excellent initial discharge and charge capacities of 2684.01 and 963.21mAhg -1 , respectively, at a current density of 100mAg -1 in the voltage range of 0.01-3V. They also exhibit cycle stability after 125 cycles with a capacity of 740mAhg -1 and a remarkable rate capability. Copyright © 2017 Elsevier Inc. All rights reserved.

  20. An efficient single-step scheme for manipulating quantum information of two trapped ions beyond the Lamb-Dicke limit

    International Nuclear Information System (INIS)

    Wei, L.F.; Nori, Franco

    2003-01-01

    Based on the exact conditional quantum dynamics for a two-ion system, we propose an efficient single-step scheme for coherently manipulating quantum information of two trapped cold ions by using a pair of synchronous laser pulses. Neither the auxiliary atomic level nor the Lamb-Dicke approximation are needed

  1. Trapping, self-trapping and the polaron family

    International Nuclear Information System (INIS)

    Stoneham, A M; Gavartin, J; Shluger, A L; Kimmel, A V; Ramo, D Munoz; Roennow, H M; Aeppli, G; Renner, C

    2007-01-01

    The earliest ideas of the polaron recognized that the coupling of an electron to ionic vibrations would affect its apparent mass and could effectively immobilize the carrier (self-trapping). We discuss how these basic ideas have been generalized to recognize new materials and new phenomena. First, there is an interplay between self-trapping and trapping associated with defects or with fluctuations in an amorphous solid. In high dielectric constant oxides, like HfO 2 , this leads to oxygen vacancies having as many as five charge states. In colossal magnetoresistance manganites, this interplay makes possible the scanning tunnelling microscopy (STM) observation of polarons. Second, excitons can self-trap and, by doing so, localize energy in ways that can modify the material properties. Third, new materials introduce new features, with polaron-related ideas emerging for uranium dioxide, gate dielectric oxides, Jahn-Teller systems, semiconducting polymers and biological systems. The phonon modes that initiate self-trapping can be quite different from the longitudinal optic modes usually assumed to dominate. Fourth, there are new phenomena, like possible magnetism in simple oxides, or with the evolution of short-lived polarons, like muons or excitons. The central idea remains that of a particle whose properties are modified by polarizing or deforming its host solid, sometimes profoundly. However, some of the simpler standard assumptions can give a limited, indeed misleading, description of real systems, with qualitative inconsistencies. We discuss representative cases for which theory and experiment can be compared in detail

  2. Single and dual fiber nano-tip optical tweezers: trapping and analysis.

    Science.gov (United States)

    Decombe, Jean-Baptiste; Huant, Serge; Fick, Jochen

    2013-12-16

    An original optical tweezers using one or two chemically etched fiber nano-tips is developed. We demonstrate optical trapping of 1 micrometer polystyrene spheres at optical powers down to 2 mW. Harmonic trap potentials were found in the case of dual fiber tweezers by analyzing the trapped particle position fluctuations. The trap stiffness was deduced using three different models. Consistent values of up to 1 fN/nm were found. The stiffness linearly decreases with decreasing light intensity and increasing fiber tip-to-tip distance.

  3. Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

    KAUST Repository

    Hota, Mrinal Kanti

    2017-06-08

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

  4. Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

    KAUST Repository

    Hota, Mrinal Kanti; Alshammari, Fwzah H.; Salama, Khaled N.; Alshareef, Husam N.

    2017-01-01

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

  5. Strong coupling between a single nitrogen-vacancy spin and the rotational mode of diamonds levitating in an ion trap

    Science.gov (United States)

    Delord, T.; Nicolas, L.; Chassagneux, Y.; Hétet, G.

    2017-12-01

    A scheme for strong coupling between a single atomic spin and the rotational mode of levitating nanoparticles is proposed. The idea is based on spin readout of nitrogen-vacancy centers embedded in aspherical nanodiamonds levitating in an ion trap. We show that the asymmetry of the diamond induces a rotational confinement in the ion trap. Using a weak homogeneous magnetic field and a strong microwave driving we then demonstrate that the spin of the nitrogen-vacancy center can be strongly coupled to the rotational mode of the diamond.

  6. Improvement in negative bias illumination stress stability of In-Ga-Zn-O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions

    Science.gov (United States)

    Na, So-Yeong; Kim, Yeo-Myeong; Yoon, Da-Jeong; Yoon, Sung-Min

    2017-12-01

    The effects of atomic layer deposition (ALD) conditions for the HfO2 gate insulators (GI) on the device characteristics of the InGaZnO (IGZO) thin film transistors (TFTs) were investigated when the ALD temperature and Hf precursor purge time were varied to 200, 225, and 250 °C, and 15 and 30 s, respectively. The HfO2 thin films showed low leakage current density of 10-8 A cm-2, high dielectric constant of over 20, and smooth surface roughness at all ALD conditions. The IGZO TFTs using the HfO2 GIs showed good device characteristics such as a saturation mobility as high as 11 cm2 V-1 s-1, a subthreshold swing as low as 0.10 V/dec, and all the devices could be operated at a gate voltage as low as  ±3 V. While there were no marked differences in transfer characteristics and PBS stabilities among the fabricated devices, the NBIS instabilities could be improved by increasing the ALD temperature for the formation of HfO2 GIs by reducing the oxygen vacancies within the IGZO channel.

  7. Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

    Science.gov (United States)

    Yuan, Lei; Zhang, Hongpeng; Jia, Renxu; Guo, Lixin; Zhang, Yimen; Zhang, Yuming

    2018-03-01

    Energy band alignments between series band of Al-rich high-k materials (HfO2)x(Al2O3)1-x and β-Ga2O3 are investigated using X-Ray Photoelectron Spectroscopy (XPS). The results exhibit sufficient conduction band offsets (1.42-1.53 eV) in (HfO2)x(Al2O3)1-x/β-Ga2O3. In addition, it is also obtained that the value of Eg, △Ec, and △Ev for (HfO2)x(Al2O3)1-x/β-Ga2O3 change linearly with x, which can be expressed by 6.98-1.27x, 1.65-0.56x, and 0.48-0.70x, respectively. The higher dielectric constant and higher effective breakdown electric field of (HfO2)x(Al2O3)1-x compared with Al2O3, coupled with sufficient barrier height and lower gate leakage makes it a potential dielectric for high voltage β-Ga2O3 power MOSFET, and also provokes interest in further investigation of HfAlO/β-Ga2O3 interface properties.

  8. Nanomechanical investigation of ion implanted single crystals - Challenges, possibilities and pitfall traps related to nanoindentation

    Science.gov (United States)

    Kurpaska, Lukasz

    2017-10-01

    Nanoindentation technique have developed considerably over last thirty years. Nowadays, commercially available systems offer very precise measurement in nano- and microscale, environmental noise cancelling (or at least noise suppressing), in situ high temperature indentation in controlled atmosphere and vacuum conditions and different additional options, among them dedicated indentation is one of the most popular. Due to its high precision, and ability to measure mechanical properties from very small depths (tens of nm), this technique become quite popular in the nuclear society. It is known that ion implantation (to some extent) can simulate the influence of neutron flux. However, depth of the material damage is very limited resulting in creation of thin layer of modified material over unmodified bulk. Therefore, only very precise technique, offering possibility to control depth of the measurement can be used to study functional properties of the material. For this reason, nanoindentation technique seems to be a perfect tool to investigate mechanical properties of ion implanted specimens. However, conducting correct nanomechanical experiment and extracting valuable mechanical parameters is not an easy task. In this paper a discussion about the nanoindentation tests performed on ion irradiated YSZ single crystal is presented. The goal of this paper is to discuss possible traps when studying mechanical properties of such materials and thin coatings.

  9. Collective excitations in circular atomic configurations and single-photon traps

    International Nuclear Information System (INIS)

    Hammer, Hanno

    2004-01-01

    Correlated excitations in a plane circular configuration of identical atoms with parallel dipole moments are investigated. The collective energy eigenstates, which are formally identical to Frenkel excitons, can be computed together with their level shifts and decay rates by decomposing the atomic state space into carrier spaces for the irreducible representations of the symmetry group Z N of the circle. It is shown that the index p of these representations can be used as a quantum number analogously to the orbital angular momentum quantum number l in hydrogenlike systems. Just as the hydrogen s states are the only electronic wave functions which can occupy the central region of the Coulomb potential, the quasiparticle corresponding to a collective excitation of the atoms in the circle can occupy the central atom only for vanishing Z N quantum number p. If a central atom is present, the p=0 state splits into two and shows level crossing at certain radii; in the regions between these radii, damped quantum beats between two 'extreme' p=0 configurations occur. The physical mechanisms behind super- and subradiance at a given radius are discussed. It is shown that, beyond a certain critical number of atoms in the circle, the lifetime of the maximally subradiant state increases exponentially with the number of atoms in the configuration, making the system a natural candidate for a single-photon trap

  10. Optical trapping and binding of particles in an optofluidic stable Fabry-Pérot resonator with single-sided injection.

    Science.gov (United States)

    Gaber, Noha; Malak, Maurine; Marty, Frédéric; Angelescu, Dan E; Richalot, Elodie; Bourouina, Tarik

    2014-07-07

    In this article, microparticles are manipulated inside an optofluidic Fabry-Pérot cylindrical cavity embedding a fluidic capillary tube, taking advantage of field enhancement and multiple reflections within the optically-resonant cavity. This enables trapping of suspended particles with single-side injection of light and with low optical power. A Hermite-Gaussian standing wave is developed inside the cavity, forming trapping spots at the locations of the electromagnetic field maxima with a strong intensity gradient. The particles get arranged in a pattern related to the mechanism affecting them: either optical trapping or optical binding. This is proven to eventually translate into either an axial one dimensional (1D) particle array or a cluster of particles. Numerical simulations are performed to model the field distributions inside the cavity allowing a behavioral understanding of the phenomena involved in each case.

  11. Characterizing physical properties and heterogeneous chemistry of single particles in air using optical trapping-Raman spectroscopy

    Science.gov (United States)

    Gong, Z.; Wang, C.; Pan, Y. L.; Videen, G.

    2017-12-01

    Heterogeneous reactions of solid particles in a gaseous environment are of increasing interest; however, most of the heterogeneous chemistry studies of airborne solids were conducted on particle ensembles. A close examination on the heterogeneous chemistry between single particles and gaseous-environment species is the key to elucidate the fundamental mechanisms of hydroscopic growth, cloud nuclei condensation, secondary aerosol formation, etc., and reduce the uncertainty of models in radiative forcing, climate change, and atmospheric chemistry. We demonstrate an optical trapping-Raman spectroscopy (OT-RS) system to study the heterogeneous chemistry of the solid particles in air at single-particle level. Compared to other single-particle techniques, optical trapping offers a non-invasive, flexible, and stable method to isolate single solid particle from substrates. Benefited from two counter-propagating hollow beams, the optical trapping configuration is adaptive to trap a variety of particles with different materials from inorganic substitution (carbon nanotubes, silica, etc.) to organic, dye-doped polymers and bioaerosols (spores, pollen, etc.), with different optical properties from transparent to strongly absorbing, with different sizes from sub-micrometers to tens of microns, or with distinct morphologies from loosely packed nanotubes to microspheres and irregular pollen grains. The particles in the optical trap may stay unchanged, surface degraded, or optically fragmented according to different laser intensity, and their physical and chemical properties are characterized by the Raman spectra and imaging system simultaneously. The Raman spectra is able to distinguish the chemical compositions of different particles, while the synchronized imaging system can resolve their physical properties (sizes, shapes, morphologies, etc.). The temporal behavior of the trapped particles also can be monitored by the OT-RS system at an indefinite time with a resolution from

  12. Intensity-gradient induced Sisyphus cooling of a single atom in a localized hollow-beam trap

    International Nuclear Information System (INIS)

    Yin, Yaling; Xia, Yong; Ren, Ruimin; Du, Xiangli; Yin, Jianping

    2015-01-01

    In order to realize a convenient and efficient laser cooling of a single atom, we propose a simple and promising scheme to cool a single neutral atom in a blue-detuned localized hollow-beam trap by intensity-gradient induced Sisyphus cooling, and study the dynamic process of the intensity-gradient cooling of a single 87 Rb atom in the localized hollow-beam trap by using Monte-Carlo simulations. Our study shows that a single 87 Rb atom with a temperature of 120 μK from a magneto-optical trap (MOT) can be directly cooled to a final temperature of 4.64 μK in our proposed scheme. We also investigate the dependences of the cooling results on the laser detuning δ of the localized hollow-beam, the power RP 0 of the re-pumping laser beam, the sizes of both the localized hollow-beam and the re-pumping beam, and find that there is a pair of optimal cooling parameters (δ and RP 0 ) for an expected lowest temperature, and the cooling results strongly depend on the size of the re-pumping beam, but weakly depend on the size of the localized hollow-beam. Finally, we further study the cooling potential of our localized hollow-beam trap for the initial temperature of a single atom, and find that a single 87 Rb atom with an initial temperature of higher than 1 mK can also be cooled directly to about 6.6 μK. (paper)

  13. Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Takamiya, Kengo; Fukushima, Toshiyuki; Yagi, Shuhei; Hijikata, Yasuto; Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku , Saitama 338-8570 (Japan); Mochizuki, Toshimitsu; Yoshita, Masahiro; Akiyama, Hidefumi [Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Kuboya, Shigeyuki; Onabe, Kentaro [Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Katayama, Ryuji [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2013-12-04

    We have studied photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in GaAs. Sharp emission lines due to exciton and biexciton were observed from individual isoelectronic traps in nitrogen atomic-layer doped (ALD) GaAs. The binding energy of biexciton bound to individual isoelectronic traps was approximately 8 meV. Both the exciton and biexciton luminescence lines show completely random polarization and no fine-structure splitting. These results are desirable to the application to the quantum cryptography used in the field of quantum information technology.

  14. Single-well experimental design for studying residual trapping of superciritcal carbon dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Y.; Freifeld, B.; Finsterle, S.; Leahy, M.; Ennis-King, J.; Paterson, L.; Dance, T.

    2010-06-15

    The objective of our research is to design a single-well injection-withdrawal test to evaluate residual phase trapping at potential CO{sub 2} geological storage sites. Given the significant depths targeted for CO{sub 2} storage and the resulting high costs associated with drilling to those depths, it is attractive to develop a single-well test that can provide data to assess reservoir properties and reduce uncertainties in the appraisal phase of site investigation. The main challenges in a single-well test design include (1) difficulty in quantifying the amount of CO{sub 2} that has dissolved into brine or migrated away from the borehole; (2) non-uniqueness and uncertainty in the estimate of the residual gas saturation (S{sub gr}) due to correlations among various parameters; and (3) the potential biased S{sub gr} estimate due to unaccounted heterogeneity of the geological medium. To address each of these challenges, we propose (1) to use a physical-based model to simulation test sequence and inverse modeling to analyze data information content and to quantify uncertainty; (2) to jointly use multiple data types generated from different kinds of tests to constrain the Sgr estimate; and (3) to reduce the sensitivity of the designed tests to geological heterogeneity by conducting the same test sequence in both a water-saturated system and a system with residual gas saturation. To perform the design calculation, we build a synthetic model and conduct a formal analysis for sensitivity and uncertain quantification. Both parametric uncertainty and geological uncertainty are considered in the analysis. Results show (1) uncertainty in the estimation of Sgr can be reduced by jointly using multiple data types and repeated tests; and (2) geological uncertainty is essential and needs to be accounted for in the estimation of S{sub gr} and its uncertainty. The proposed methodology is applied to the design of a CO{sub 2} injection test at CO2CRC's Otway Project Site, Victoria

  15. Feedback-controlled electro-kinetic traps for single-molecule ...

    Indian Academy of Sciences (India)

    2014-01-11

    Jan 11, 2014 ... limited residence time of a given molecule within the detection volume. A common ... information on individual folding pathways, as well as to the internal dynamics between ..... Essentials for building an electro-kinetic trap.

  16. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang [Columbia Univ., New York, NY (United States); Frisbie, Daniel [Univ. of Minnesota, Minneapolis, MN (United States)

    2017-03-31

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering.

  17. Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2

    Science.gov (United States)

    Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

    2017-10-01

    We have investigated the energy efficiency and scalability of ferroelectric HfO2 (FE:HfO2)-based negative-capacitance field-effect-transistor (NCFET) with gate-all-around (GAA) nanowire (NW) channel structure. Analytic simulation is conducted to characterize NW-NCFET by varying NW diameter and/or thickness of gate insulator as device structural parameters. Due to the negative-capacitance effect and GAA NW channel structure, NW-NCFET is found to have 5× higher Ion/Ioff ratio than classical NW-MOSFET and 2× higher than double-gate (DG) NCFET, which results in wider design window for high Ion/Ioff ratio. To analyze these obtained results from the viewpoint of the device scalability, we have considered constraints regarding very limited device structural spaces to fit by the gate insulator and NW channel for aggresively scaled gate length (Lg) and/or very tight NW pitch. NW-NCFET still has design point with very thinned gate insulator and/or narrowed NW. Therefore, FE:HfO2-based NW-NCFET is applicable to the aggressively scaled technology node of sub-10 nm Lg and to the very tight NW integration of sub-30 nm NW pitch for beyond 7 nm technology. From 2011 to 2014, he engaged in developing high-speed optical transceiver module as an alternative military service in Republic of Korea. His research interest includes the development of steep slope MOSFETs for high energy-efficient operation and ferroelectric HfO2-based semiconductor devices, and fabrication of nanostructured devices. He joined the IBM T.J. Watson Research Center, Yorktown Heights, NY, in 2010, where he worked on advanced CMOS technologies such as FinFET, nanowire FET, SiGe channel and III-V channel. He was also engaged in launching 14 nm SOI FinFET and RMG technology development. Since 2014, he has been an Associate Professor in Institute of Industrial Science, University of Tokyo, Tokyo, Japan, where he has been working on ultralow power transistor and memory technology. Dr. Kobayashi is a member of IEEE and the Japan Society of Applied Physics. Dr. Hiramoto is a fellow of Japan Society of Applied Physics and a member of IEEE and IEICE. He served as the General Chair of Silicon Nanoelectronics Workshop in 2003 and the Program Chair in 1997, 1999, and 2001. He was on Committee of IEDM from 2003 to 2009. He was the Program Chair of Symposium on VLSI Technology in 2013 and was the General Chair in 2015. He is the Program Chair of International Conference on Solid-State Devices and Materials (SSDM) in 2016.

  18. Raman spectroscopy of individual monocytes reveals that single-beam optical trapping of mononuclear cells occurs by their nucleus

    International Nuclear Information System (INIS)

    Fore, Samantha; Chan, James; Taylor, Douglas; Huser, Thomas

    2011-01-01

    We show that laser tweezers Raman spectroscopy of eukaryotic cells with a significantly larger diameter than the tight focus of a single-beam laser trap leads to optical trapping of the cell by its optically densest part, i.e. typically the cell's nucleus. Raman spectra of individual optically trapped monocytes are compared with location-specific Raman spectra of monocytes adhered to a substrate. When the cell's nucleus is stained with a fluorescent live cell stain, the Raman spectrum of the DNA-specific stain is observed only in the nucleus of individual monocytes. Optically trapped monocytes display the same behavior. We also show that the Raman spectra of individual monocytes exhibit the characteristic Raman signature of cells that have not yet fully differentiated and that individual primary monocytes can be distinguished from transformed monocytes based on their Raman spectra. This work provides further evidence that laser tweezers Raman spectroscopy of individual cells provides meaningful biochemical information in an entirely non-destructive fashion that permits discerning differences between cell types and cellular activity

  19. Correlated motion of two atoms trapped in a single-mode cavity field

    International Nuclear Information System (INIS)

    Asboth, Janos K.; Domokos, Peter; Ritsch, Helmut

    2004-01-01

    We study the motion of two atoms trapped at distant positions in the field of a driven standing-wave high-Q optical resonator. Even without any direct atom-atom interaction the atoms are coupled through their position dependent influence on the intracavity field. For sufficiently good trapping and low cavity losses the atomic motion becomes significantly correlated and the two particles oscillate in their wells preferentially with a 90 deg. relative phase shift. The onset of correlations seriously limits cavity cooling efficiency, raising the achievable temperature to the Doppler limit. The physical origin of the correlation can be traced back to a cavity mediated crossfriction, i.e., a friction force on one particle depending on the velocity of the second particle. Choosing appropriate operating conditions allows for engineering these long range correlations. In addition this cross-friction effect can provide a basis for sympathetic cooling of distant trapped clouds

  20. Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

    International Nuclear Information System (INIS)

    Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

    2005-01-01

    Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

  1. Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

    Science.gov (United States)

    Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

    2018-01-01

    We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

  2. Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

    2017-05-01

    In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

  3. Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application

    Science.gov (United States)

    Wu, Wen-Hao; Lin, Yueh-Chin; Chuang, Ting-Wei; Chen, Yu-Chen; Hou, Tzu-Ching; Yao, Jing-Neng; Chang, Po-Chun; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2014-03-01

    In this paper, we report on high-k composite oxides that are formed by depositing multiple layers of HfO2 and La2O3 on In0.53Ga0.47As for MOS device application. Both multilayer HfO2 (0.8 nm)/La2O3 (0.8 nm)/In0.53Ga0.47As and La2O3 (0.8 nm)/HfO2 (0.8 nm)/In0.53Ga0.47As MOS structures were investigated. The effects of oxide thickness and postdeposition annealing (PDA) temperature on the interface properties of the composite oxide MOS capacitors were studied. It was found that a low CET of 1.41 nm at 1 kHz was achieved using three-layer composite oxides. On the other hand, a small frequency dispersion of 2.8% and an excellent Dit of 7.0 × 1011 cm-2·eV-1 can be achieved using multiple layers of La2O3 (0.8 nm) and HfO2 (0.8 nm) on the In0.53Ga0.47As MOS capacitor with optimum thermal treatment and layer thickness.

  4. Atomization efficiency and photon yield in laser-induced breakdown spectroscopy analysis of single nanoparticles in an optical trap

    Science.gov (United States)

    Purohit, Pablo; Fortes, Francisco J.; Laserna, J. Javier

    2017-04-01

    Laser-induced breakdown spectroscopy (LIBS) was employed for investigating the influence of particle size on the dissociation efficiency and the absolute production of photons per mass unit of airborne solid graphite spheres under single-particle regime. Particles of average diameter of 400 nm were probed and compared with 2 μm particles. Samples were first catapulted into aerosol form and then secluded in an optical trap set by a 532 nm laser. Trap stability was quantified before subjecting particles to LIBS analysis. Fine alignment of the different lines comprising the optical catapulting-optical trapping-laser-induced breakdown spectroscopy instrument and tuning of excitation parameters conditioning the LIBS signal such as fluence and acquisition delay are described in detail with the ultimate goal of acquiring clear spectroscopic data on masses as low as 75 fg. The atomization efficiency and the photon yield increase as the particle size becomes smaller. Time-resolved plasma imaging studies were conducted to elucidate the mechanisms leading to particle disintegration and excitation.

  5. A Single-Molecule Propyne Trap: Highly Efficient Removal of Propyne from Propylene with Anion-Pillared Ultramicroporous Materials.

    Science.gov (United States)

    Yang, Lifeng; Cui, Xili; Yang, Qiwei; Qian, Siheng; Wu, Hui; Bao, Zongbi; Zhang, Zhiguo; Ren, Qilong; Zhou, Wei; Chen, Banglin; Xing, Huabin

    2018-03-01

    Propyne/propylene (C 3 H 4 /C 3 H 6 ) separation is a critical process for the production of polymer-grade C 3 H 6 . However, optimization of the structure of porous materials for the highly efficient removal of C 3 H 4 from C 3 H 6 remains challenging due to their similar structures and ultralow C 3 H 4 concentration. Here, it is first reported that hybrid ultramicroporous materials with pillared inorganic anions (SiF 6 2- = SIFSIX, NbOF 5 2- = NbOFFIVE) can serve as highly selective C 3 H 4 traps for the removal of trace C 3 H 4 from C 3 H 6 . Especially, it is revealed that the pyrazine-based ultramicroporous material with square grid structure for which the pore shape and functional site disposition can be varied in 0.1-0.5 Å scale to match both the shape and interacting sites of guest molecule is an interesting single-molecule trap for C 3 H 4 molecule. The pyrazine-based single-molecule trap enables extremely high C 3 H 4 uptake under ultralow concentration (2.65 mmol g -1 at 3000 ppm, one C 3 H 4 per unit cell) and record selectivity over C 3 H 6 at 298 K (>250). The single-molecule binding mode for C 3 H 4 within ultramicroporous material is validated by X-ray diffraction experiments and modeling studies. The breakthrough experiments confirm that anion-pillared ultramicroporous materials set new benchmarks for the removal of ultralow concentration C 3 H 4 (1000 ppm on SIFSIX-3-Ni, and 10 000 ppm on SIFSIX-2-Cu-i) from C 3 H 6 . © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

    International Nuclear Information System (INIS)

    Kent, Tyler; Edmonds, Mary; Kummel, Andrew C.; Tang, Kechao; Negara, Muhammad Adi; McIntyre, Paul; Chobpattana, Varistha; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi

    2015-01-01

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C max hypothesized to be a result of poor nucleation of HfO 2 on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D it high C ox MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared

  7. Cryogenic surface ion traps

    International Nuclear Information System (INIS)

    Niedermayr, M.

    2015-01-01

    Microfabricated surface traps are a promising architecture to realize a scalable quantum computer based on trapped ions. In principle, hundreds or thousands of surface traps can be located on a single substrate in order to provide large arrays of interacting ions. To this end, trap designs and fabrication methods are required that provide scalable, stable and reproducible ion traps. This work presents a novel surface-trap design developed for cryogenic applications. Intrinsic silicon is used as the substrate material of the traps. The well-developed microfabrication and structuring methods of silicon are utilized to create simple and reproducible traps. The traps were tested and characterized in a cryogenic setup. Ions could be trapped and their life time and motional heating were investigated. Long ion lifetimes of several hours were observed and the measured heating rates were reproducibly low at around 1 phonon per second at a trap frequency of 1 MHz. (author) [de

  8. Integration of laser trapping for continuous and selective monitoring of photothermal response of a single microparticle.

    Science.gov (United States)

    Vasudevan, Srivathsan; Chen, George C K; Ahluwalia, Balpreet Singh

    2008-12-01

    Photothermal response (PTR) is an established pump and probe technique for real-time sensing of biological assays. Continuous and selective PTR monitoring is difficult owing to the Brownian motion changing the relative position of the target with respect to the beams. Integration of laser trapping with PTR is proposed as a solution. The proposed method is verified on red polystyrene microparticles. PTR is continuously monitored for 30 min. Results show that the mean relaxation time variation of the acquired signals is less than 5%. The proposed method is then applied to human red blood cells for continuous and selective PTR.

  9. Single Particle Differentiation through 2D Optical Fiber Trapping and Back-Scattered Signal Statistical Analysis: An Exploratory Approach.

    Science.gov (United States)

    Paiva, Joana S; Ribeiro, Rita S R; Cunha, João P S; Rosa, Carla C; Jorge, Pedro A S

    2018-02-27

    Recent trends on microbiology point out the urge to develop optical micro-tools with multifunctionalities such as simultaneous manipulation and sensing. Considering that miniaturization has been recognized as one of the most important paradigms of emerging sensing biotechnologies, optical fiber tools, including Optical Fiber Tweezers (OFTs), are suitable candidates for developing multifunctional small sensors for Medicine and Biology. OFTs are flexible and versatile optotools based on fibers with one extremity patterned to form a micro-lens. These are able to focus laser beams and exert forces onto microparticles strong enough (piconewtons) to trap and manipulate them. In this paper, through an exploratory analysis of a 45 features set, including time and frequency-domain parameters of the back-scattered signal of particles trapped by a polymeric lens, we created a novel single feature able to differentiate synthetic particles (PMMA and Polystyrene) from living yeasts cells. This single statistical feature can be useful for the development of label-free hybrid optical fiber sensors with applications in infectious diseases detection or cells sorting. It can also contribute, by revealing the most significant information that can be extracted from the scattered signal, to the development of a simpler method for particles characterization (in terms of composition, heterogeneity degree) than existent technologies.

  10. Integration of single oocyte trapping, in vitro fertilization and embryo culture in a microwell-structured microfluidic device.

    Science.gov (United States)

    Han, Chao; Zhang, Qiufang; Ma, Rui; Xie, Lan; Qiu, Tian; Wang, Lei; Mitchelson, Keith; Wang, Jundong; Huang, Guoliang; Qiao, Jie; Cheng, Jing

    2010-11-07

    In vitro fertilization (IVF) therapy is an important treatment for human infertility. However, the methods for clinical IVF have only changed slightly over decades: culture medium is held in oil-covered drops in Petri dishes and manipulation occurs by manual pipetting. Here we report a novel microwell-structured microfluidic device that integrates single oocyte trapping, fertilization and subsequent embryo culture. A microwell array was used to capture and hold individual oocytes during the flow-through process of oocyte and sperm loading, medium substitution and debris cleaning. Different microwell depths were compared by computational modeling and flow washing experiments for their effectiveness in oocyte trapping and debris removal. Fertilization was achieved in the microfluidic devices with similar fertilization rates to standard oil-covered drops in Petri dishes. Embryos could be cultured to blastocyst stages in our devices with developmental status individually monitored and tracked. The results suggest that the microfluidic device may bring several advantages to IVF practices by simplifying oocyte handling and manipulation, allowing rapid and convenient medium changing, and enabling automated tracking of any single embryo development.

  11. Direct observation of a single proton in a Penning trap. Towards a direct measurement of the proton g-factor

    Energy Technology Data Exchange (ETDEWEB)

    Kreim, Susanne Waltraud

    2009-08-25

    This PhD thesis presents experiments performed on a single proton stored in a Penning trap. The eigenmotion of an isolated, free proton could be detected electronically via a coupling to a resonance circuit. This represents a non-destructive measurement, i.e. the particle is not lost during the measurement. The free cyclotron frequency emerging from the measured eigenfrequencies is one of the two frequencies required for the determination of the magnetic moment. This enables a direct determination of the g-factor contrary to already existing works. Design, developing, and commissioning of the experimental setup have been accomplished within the scope of this work leading to a measuring accuracy of 10{sup -7}. The technical challenges for the determination of the second frequency (the Larmor frequency) arising from the smallness of the magnetic moment were mastered. Since the spin state required for this measurement is an internal degree of freedom, it can only be accessed through a coupling of the magnetic moment to the eigenmotion. A novel, hybrid penning trap is presented in this work, which imprints the spin information onto the eigenmotion, thus, realizing a quantum jump spectrometer. Therewith, the frequency shift of the two spin states resulting from the magnetic coupling reaches for the first time an electronically detectable range. (orig.)

  12. Direct observation of a single proton in a Penning trap. Towards a direct measurement of the proton g-factor

    International Nuclear Information System (INIS)

    Kreim, Susanne Waltraud

    2009-01-01

    This PhD thesis presents experiments performed on a single proton stored in a Penning trap. The eigenmotion of an isolated, free proton could be detected electronically via a coupling to a resonance circuit. This represents a non-destructive measurement, i.e. the particle is not lost during the measurement. The free cyclotron frequency emerging from the measured eigenfrequencies is one of the two frequencies required for the determination of the magnetic moment. This enables a direct determination of the g-factor contrary to already existing works. Design, developing, and commissioning of the experimental setup have been accomplished within the scope of this work leading to a measuring accuracy of 10 -7 . The technical challenges for the determination of the second frequency (the Larmor frequency) arising from the smallness of the magnetic moment were mastered. Since the spin state required for this measurement is an internal degree of freedom, it can only be accessed through a coupling of the magnetic moment to the eigenmotion. A novel, hybrid penning trap is presented in this work, which imprints the spin information onto the eigenmotion, thus, realizing a quantum jump spectrometer. Therewith, the frequency shift of the two spin states resulting from the magnetic coupling reaches for the first time an electronically detectable range. (orig.)

  13. Single-pulse and multi-pulse femtosecond laser damage of optical single films

    International Nuclear Information System (INIS)

    Yuan Lei; Zhao Yuan'an; He Hongbo; Shao Jianda; Fan Zhengxiu

    2006-01-01

    Laser-induced damage of a single 500 nm HfO 2 film and a single 500 nm ZrO 2 film were studied with single- and multi-pulse femtosecond laser. The laser-induced damage thresholds (LIDT) of both samples by the 1-on-1 method and the 1000-on-1 method were reported. It was discovered that the LIDT of the HfO 2 single film was higher than that of the ZrO 2 single film by both test methods, which was explained by simple Keldysh's multiphoton ionization theory. The LIDT of multi-pulse was lower than that of single-pulse for both samples as a result of accumulative effect. (authors)

  14. Estimation of the spatial distribution of traps using space-charge-limited current measurements in an organic single crystal

    KAUST Repository

    Dacuñ a, Javier; Xie, Wei; Salleo, Alberto

    2012-01-01

    bias), which does not exhibit injection-limited current in the measured voltage range. This behavior is attributed to an asymmetric distribution of trap states in the semiconductor, specifically, a distribution of traps located near the top contact

  15. New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces

    OpenAIRE

    Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi; Miyazaki, Seiichi; Nakaoka, Takashi; Ohmori, Kenji; Ahmet, Parhat; Torii, Kazuyoshi; Watanabe, Heiji; Chikyow, Toyohiro; Nara, Yasuo; Iwai, Hiroshi; Yamada, Keisaku

    2006-01-01

    We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions ...

  16. Trapping a single atom with a fraction of a photon using a photonic crystal nanocavity

    NARCIS (Netherlands)

    van Oosten, D.; Kuipers, L.

    2011-01-01

    We consider the interaction between a single rubidium atom and a photonic crystal nanocavity. Because of the ultrasmall mode volume of the nanocavity, an extremely strong coupling regime can be achieved in which the atom can shift the cavity resonance by many cavity linewidths. We show that this

  17. Infrared laser dissociation of single megadalton polymer ions in a gated electrostatic ion trap: the added value of statistical analysis of individual events.

    Science.gov (United States)

    Halim, Mohammad A; Clavier, Christian; Dagany, Xavier; Kerleroux, Michel; Dugourd, Philippe; Dunbar, Robert C; Antoine, Rodolphe

    2018-05-07

    In this study, we report the unimolecular dissociation mechanism of megadalton SO 3 -containing poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPS) polymer cations and anions with the aid of infrared multiphoton dissociation coupled to charge detection ion trap mass spectrometry. A gated electrostatic ion trap ("Benner trap") is used to store and detect single gaseous polymer ions generated by positive and negative polarity in an electrospray ionization source. The trapped ions are then fragmented due to the sequential absorption of multiple infrared photons produced from a continuous-wave CO 2 laser. Several fragmentation pathways having distinct signatures are observed. Highly charged parent ions characteristically adopt a distinctive "stair-case" pattern (assigned to the "fission" process) whereas low charge species take on a "funnel like" shape (assigned to the "evaporation" process). Also, the log-log plot of the dissociation rate constants as a function of laser intensity between PAMPS positive and negative ions is significantly different.

  18. Single-cell mRNA cytometry via sequence-specific nanoparticle clustering and trapping

    Science.gov (United States)

    Labib, Mahmoud; Mohamadi, Reza M.; Poudineh, Mahla; Ahmed, Sharif U.; Ivanov, Ivaylo; Huang, Ching-Lung; Moosavi, Maral; Sargent, Edward H.; Kelley, Shana O.

    2018-05-01

    Cell-to-cell variation in gene expression creates a need for techniques that can characterize expression at the level of individual cells. This is particularly true for rare circulating tumour cells, in which subtyping and drug resistance are of intense interest. Here we describe a method for cell analysis—single-cell mRNA cytometry—that enables the isolation of rare cells from whole blood as a function of target mRNA sequences. This approach uses two classes of magnetic particles that are labelled to selectively hybridize with different regions of the target mRNA. Hybridization leads to the formation of large magnetic clusters that remain localized within the cells of interest, thereby enabling the cells to be magnetically separated. Targeting specific intracellular mRNAs enablescirculating tumour cells to be distinguished from normal haematopoietic cells. No polymerase chain reaction amplification is required to determine RNA expression levels and genotype at the single-cell level, and minimal cell manipulation is required. To demonstrate this approach we use single-cell mRNA cytometry to detect clinically important sequences in prostate cancer specimens.

  19. OptEase and TrapEase Vena Cava Filters: A Single-Center Experience in 258 Patients

    International Nuclear Information System (INIS)

    Onat, Levent; Ganiyusufoglu, Ali Kursat; Mutlu, Ayhan; Sirvanci, Mustafa; Duran, Cihan; Ulusoy, Onur Levent; Hamzaoglu, Azmi

    2009-01-01

    We aimed to evaluate the efficacy and safety of the OptEase and TrapEase (both from Cordis, Roden, Netherlands) vena cava filters in the prevention of pulmonary embolism (PE). Between May 2004 and December 2008, OptEase (permanent/retrievable; n = 228) or TrapEase (permanent; n = 30) vena cava filters were placed in 258 patients (160 female and 98 male; mean age 62 years [range 22 to 97]). Indications were as follows: prophylaxis for PE (n = 239), contraindication for anticoagulation in the presence of PE or DVT (n = 10), and development of PE or DVT despite anticoagulation (n = 9). Medical records were retrospectively reviewed for indications, clinical results, and procedure-related complications during placement and retrieval. Clinical PE did not develop in any of the patients. However, radiologic signs of segmental PE were seen in 6 of 66 patients with follow-up imaging data. Migration or fracture of the filter or cava perforation was not seen in any of the patients. Except for a single case of asymptomatic total cava thrombosis, no thrombotic occlusion was observed. One hundred forty-one patients were scheduled to undergo filter removal; however, 17 of them were not suitable for such based on venography evaluation. Removal was attempted in 124 patients and was successful in 115 of these (mean duration of retention 11 days [range 4 to 23]). Nine filters could not be removed. Permanent/retrievable vena cava filters are safe and effective devices for PE prophylaxis and for the management of venous thromboembolism by providing the option to be left in place.

  20. A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.

    Science.gov (United States)

    Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

    2018-06-15

    Top-gated and bottom-gated transistors with multilayer MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on-off current ratio of 10 8 , high field-effect mobility of 10 2 cm 2 V -1 s -1 , and low subthreshold swing of 93 mV dec -1 . Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10 -3 -10 -2 V MV -1 cm -1 after 6 MV cm -1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 is a promising way to fabricate high-performance ML MoS 2 field-effect transistors for practical electron device applications.

  1. Excess electron is trapped in a large single molecular cage C60F60.

    Science.gov (United States)

    Wang, Yin-Feng; Li, Zhi-Ru; Wu, Di; Sun, Chia-Chung; Gu, Feng-Long

    2010-01-15

    A new kind of solvated electron systems, sphere-shaped e(-)@C60F60 (I(h)) and capsule-shaped e(-)@C60F60 (D6h), in contrast to the endohedral complex M@C60, is represented at the B3LYP/6-31G(d) + dBF (diffusive basis functions) density functional theory. It is proven, by examining the singly occupied molecular orbital (SOMO) and the spin density map of e(-)@C60F60, that the excess electron is indeed encapsulated inside the C60F60 cage. The shape of the electron cloud in SOMO matches with the shape of C60F60 cage. These cage-like single molecular solvated electrons have considerably large vertical electron detachment energies VDE of 4.95 (I(h)) and 4.67 eV (D6h) at B3LYP/6-31+G(3df) + dBF level compared to the VDE of 3.2 eV for an electron in bulk water (Coe et al., Int Rev Phys Chem 2001, 20, 33) and that of 3.66 eV for e(-)@C20F20 (Irikura, J Phys Chem A 2008, 112, 983), which shows their higher stability. The VDE of the sphere-shaped e(-)@C60F60 (I(h)) is greater than that of the capsule-shaped e(-)@C60F60 (D6h), indicating that the excess electron prefers to reside in the cage with the higher symmetry to form the more stable solvated electron. It is also noticed that the cage size [7.994 (I(h)), 5.714 and 9.978 A (D6h) in diameter] is much larger than that (2.826 A) of (H2O)20- dodecahedral cluster (Khan, Chem Phys Lett 2005, 401, 85). Copyright 2009 Wiley Periodicals, Inc.

  2. Quantitative measurement of damage caused by 1064-nm wavelength optical trapping of Escherichia coli cells using on-chip single cell cultivation system

    International Nuclear Information System (INIS)

    Ayano, Satoru; Wakamoto, Yuichi; Yamashita, Shinobu; Yasuda, Kenji

    2006-01-01

    We quantitatively examined the possible damage to the growth and cell division ability of Escherichia coli caused by 1064-nm optical trapping. Using the synchronous behavior of two sister E. coli cells, the growth and interdivision times between those two cells, one of which was trapped by optical tweezers, the other was not irradiated, were compared using an on-chip single cell cultivation system. Cell growth stopped during the optical trapping period, even with the smallest irradiated power on the trapped cells. Moreover, the damage to the cell's growth and interdivision period was proportional to the total irradiated energy (work) on the cell, i.e., irradiation time multiplied by irradiation power. The division ability was more easily affected by a smaller energy, 0.36 J, which was 30% smaller than the energy that adversely affected growth, 0.54 J. The results indicate that the damage caused by optical trapping can be estimated from the total energy applied to cells, and furthermore, that the use of optical trapping for manipulating cells might cause damage to cell division and growth mechanisms, even at wavelengths under 1064 nm, if the total irradiation energy is excessive

  3. Numerical comparison between Maxwell stress method and equivalent multipole approach for calculation of the dielectrophoretic force in single-cell traps.

    Science.gov (United States)

    Rosales, Carlos; Lim, Kian Meng

    2005-06-01

    This paper presents detailed numerical calculations of the dielectrophoretic force in traps designed for single-cell trapping. A trap with eight planar electrodes is studied for spherical and ellipsoidal particles using the boundary element method (BEM). Multipolar approximations of orders one to three are compared with the full Maxwell stress tensor (MST) calculation of the electrical force on spherical particles. Ellipsoidal particles are also studied, but in their case only the dipolar approximation is available for comparison with the MST solution. The results show that a small number of multipolar terms need to be considered in order to obtain accurate results for spheres, even in the proximity of the electrodes, and that the full MST calculation is only required in the study of non-spherical particles.

  4. Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when integrated with advanced EBC top coats, showed promise to achieve 1500 C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and long-term durability.

  5. A sea lamprey (Petromyzon marinus) sex pheromone mixture increases trap catch relative to a single synthesized component in specific environments

    Science.gov (United States)

    Johnson, Nicholas S.; Tix, John A.; Hlina, Benjamin L.; Wagner, C. Michael; Siefkes, Michael J.; Wang, Huiyong; Li, Weiming

    2015-01-01

    Spermiating male sea lamprey (Petromyzon marinus) release a sex pheromone, of which a component, 7α, 12α, 24-trihydoxy-3-one-5α-cholan-24-sulfate (3kPZS), has been identified and shown to induce long distance preference responses in ovulated females. However, other pheromone components exist, and when 3kPZS alone was used to control invasive sea lamprey populations in the Laurentian Great Lakes, trap catch increase was significant, but gains were generally marginal. We hypothesized that free-ranging sea lamprey populations discriminate between a partial and complete pheromone while migrating to spawning grounds and searching for mates at spawning grounds. As a means to test our hypothesis, and to test two possible uses of sex pheromones for sea lamprey control, we asked whether the full sex pheromone mixture released by males (spermiating male washings; SMW) is more effective than 3kPZS in capturing animals in traditional traps (1) en route to spawning grounds and (2) at spawning grounds. At locations where traps target sea lampreys en route to spawning grounds, SMW-baited traps captured significantly more sea lampreys than paired 3kPZS-baited traps (~10 % increase). At spawning grounds, no difference in trap catch was observed between 3kPZS and SMW-baited traps. The lack of an observed difference at spawning grounds may be attributed to increased pheromone competition and possible involvement of other sensory modalities to locate mates. Because fishes often rely on multiple and sometimes redundant sensory modalities for critical life history events, the addition of sex pheromones to traditionally used traps is not likely to work in all circumstances. In the case of the sea lamprey, sex pheromone application may increase catch when applied to specifically designed traps deployed in streams with low adult density and limited spawning habitat.

  6. Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

    Science.gov (United States)

    Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J. R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J. L.; Soubervielle-Montalvo, C.; Mani-Gonzalez, P. G.

    2016-06-01

    The final structure of HfO2 films grown by atomic layer deposition (ALD) after reaction with OH- ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl4 (hafnium tetrachloride), HfI4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO-H was studied employing the B3LYP (Becke 3-parameter, Lee-Yang-Parr) hybrid functional and the PBE (Perdew-Burke-Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

  7. UV-laser-light-controlled photoluminescence of metal oxide nanoparticles in different gas atmospheres: BaTiO3, SrTiO3 and HfO2

    International Nuclear Information System (INIS)

    Mochizuki, Shosuke; Saito, Takashi; Yoshida, Kaori

    2012-01-01

    The photoluminescence (PL) enhancement has been studied at room temperature using various specimen atmospheres (O 2 gas, CO 2 gas, CO 2 -H 2 mixture gas, Ar-H 2 mixture gas and vacuum) under 325 nm laser light irradiation on various metal oxides. Of them, the results obtained for BaTiO 3 nanocrystals, SrTiO 3 ones and HfO 2 powder crystal are given in the present paper. Their PL were considerably increased in intensity by irradiation of 325 nm laser light in CO 2 gas and CO 2 -H 2 mixture gas. The cause of the PL intensity enhancements is discussed in the light of the exciton theory, the defect chemistry and the photocatalytic theory. The results may be applied for the utilization of greenhouse gas (CO 2 ) and the optical sensor for CO 2 gas.

  8. Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics

    OpenAIRE

    Choi, Sungho; An, Youngseo; Lee, Changmin; Song, Jeongkeun; Nguyen, Manh-Cuong; Byun, Young-Chul; Choi, Rino; McIntyre, Paul C.; Kim, Hyoungsub

    2017-01-01

    We studied the impact of H2 pressure during post-metallization annealing on the chemical composition of a HfO2/Al2O3 gate stack on a HCl wet-cleaned In0.53Ga0.47As substrate by comparing the forming gas annealing (at atmospheric pressure with a H2 partial pressure of 0.04?bar) and H2 high-pressure annealing (H2-HPA at 30?bar) methods. In addition, the effectiveness of H2-HPA on the passivation of the interface states was compared for both p- and n-type In0.53Ga0.47As substrates. The decomposi...

  9. High-k shallow traps observed by charge pumping with varying discharging times

    International Nuclear Information System (INIS)

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang; Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju; Wang, Bin-Wei; Cao, Xi-Xin; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu

    2013-01-01

    In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO 2 /metal gate stacks. N T -V high level characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N T for extra contribution of I cp traps. N T is the number of traps, and I cp is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I cp traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti x N 1−x metal gate concentrations. Next, N T -V high level characteristic curves with different falling times (t falling time ) and base level times (t base level ) show that extra contribution of I cp traps decrease with an increase in t falling time . By fitting discharge formula for different t falling time , the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t falling time . This current cannot be measured by the charge pumping technique. Subsequent measurements of N T by charge pumping technique at t base level reveal a remainder of electrons trapped in high-k bulk shallow traps

  10. Universal Expression of Efficiency at Maximum Power: A Quantum-Mechanical Brayton Engine Working with a Single Particle Confined in a Power-Law Trap

    International Nuclear Information System (INIS)

    Ye Zhuo-Lin; Li Wei-Sheng; Lai Yi-Ming; He Ji-Zhou; Wang Jian-Hui

    2015-01-01

    We propose a quantum-mechanical Brayton engine model that works between two superposed states, employing a single particle confined in an arbitrary power-law trap as the working substance. Applying the superposition principle, we obtain the explicit expressions of the power and efficiency, and find that the efficiency at maximum power is bounded from above by the function: η_+ = θ/(θ + 1), with θ being a potential-dependent exponent. (paper)

  11. Launch and capture of a single particle in a pulse-laser-assisted dual-beam fiber-optic trap

    Science.gov (United States)

    Fu, Zhenhai; She, Xuan; Li, Nan; Hu, Huizhu

    2018-06-01

    The rapid loading and manipulation of microspheres in optical trap is important for its applications in optomechanics and precision force sensing. We investigate the microsphere behavior under coaction of a dual-beam fiber-optic trap and a pulse laser beam, which reveals a launched microsphere can be effectively captured in a spatial region. A suitable order of pulse duration for launch is derived according to the calculated detachment energy threshold of pulse laser. Furthermore, we illustrate the effect of structural parameters on the launching process, including the spot size of pulse laser, the vertical displacement of beam waist and the initial position of microsphere. Our result will be instructive in the optimal design of the pulse-laser-assisted optical tweezers for controllable loading mechanism of optical trap.

  12. Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs

    Directory of Open Access Journals (Sweden)

    Yen-Ting Chen

    2012-03-01

    Full Text Available This paper reports significant improvements in the electrical performance of In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET by a post-gate CF4/O2 plasma treatment. The optimum condition of CF4/O2 plasma treatment has been systematically studied and found to be 30 W for 3–5 min. Approximately 5× reduction in interface trap density from 2.8 × 1012 to 4.9 × 1011 cm−2eV−1 has been demonstrated with fluorine (F incorporation. Subthreshold swing has been improved from 127 to 109 mV/dec. Effective channel mobility has been enhanced from 826 to 1,144 cm2/Vs.

  13. Electron Spin Resonance study of charge trapping in α-ZnMoO.sub.4./sub. single crystal scintillator

    Czech Academy of Sciences Publication Activity Database

    Buryi, Maksym; Spassky, D.A.; Hybler, Jiří; Laguta, Valentyn; Nikl, Martin

    2015-01-01

    Roč. 47, Sep (2015), 244-250 ISSN 0925-3467 R&D Projects: GA MŠk LO1409; GA MŠk(CZ) LM2011029; GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : Electron Spin Resonance * scintillator * charge traps * zinc molybdate Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2015

  14. Graphene-edge dielectrophoretic tweezers for trapping of biomolecules.

    Science.gov (United States)

    Barik, Avijit; Zhang, Yao; Grassi, Roberto; Nadappuram, Binoy Paulose; Edel, Joshua B; Low, Tony; Koester, Steven J; Oh, Sang-Hyun

    2017-11-30

    The many unique properties of graphene, such as the tunable optical, electrical, and plasmonic response make it ideally suited for applications such as biosensing. As with other surface-based biosensors, however, the performance is limited by the diffusive transport of target molecules to the surface. Here we show that atomically sharp edges of monolayer graphene can generate singular electrical field gradients for trapping biomolecules via dielectrophoresis. Graphene-edge dielectrophoresis pushes the physical limit of gradient-force-based trapping by creating atomically sharp tweezers. We have fabricated locally backgated devices with an 8-nm-thick HfO 2 dielectric layer and chemical-vapor-deposited graphene to generate 10× higher gradient forces as compared to metal electrodes. We further demonstrate near-100% position-controlled particle trapping at voltages as low as 0.45 V with nanodiamonds, nanobeads, and DNA from bulk solution within seconds. This trapping scheme can be seamlessly integrated with sensors utilizing graphene as well as other two-dimensional materials.

  15. Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

    International Nuclear Information System (INIS)

    Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J.R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J.L.

    2016-01-01

    Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO 2 films grown by atomic layer deposition (ALD) after reaction with OH − ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl 4 (hafnium tetrachloride), HfI 4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

  16. Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  17. Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics.

    Science.gov (United States)

    Choi, Sungho; An, Youngseo; Lee, Changmin; Song, Jeongkeun; Nguyen, Manh-Cuong; Byun, Young-Chul; Choi, Rino; McIntyre, Paul C; Kim, Hyoungsub

    2017-08-29

    We studied the impact of H 2 pressure during post-metallization annealing on the chemical composition of a HfO 2 /Al 2 O 3 gate stack on a HCl wet-cleaned In 0.53 Ga 0.47 As substrate by comparing the forming gas annealing (at atmospheric pressure with a H 2 partial pressure of 0.04 bar) and H 2 high-pressure annealing (H 2 -HPA at 30 bar) methods. In addition, the effectiveness of H 2 -HPA on the passivation of the interface states was compared for both p- and n-type In 0.53 Ga 0.47 As substrates. The decomposition of the interface oxide and the subsequent out-diffusion of In and Ga atoms toward the high-k film became more significant with increasing H 2 pressure. Moreover, the increase in the H 2 pressure significantly improved the capacitance‒voltage characteristics, and its effect was more pronounced on the p-type In 0.53 Ga 0.47 As substrate. However, the H 2 -HPA induced an increase in the leakage current, probably because of the out-diffusion and incorporation of In/Ga atoms within the high-k stack.

  18. Environmental Stability and Oxidation Behavior of HfO2-Si and YbGd(O) Based Environmental Barrier Coating Systems for SiCSiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Farmer, Serene; McCue, Terry R.; Harder, Bryan; Hurst, Janet B.

    2017-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, environmental durable environmental barrier coating systems. In this paper, the durability and performance of advanced Electron Beam-Physical Vapor Deposition (EB-PVD) NASA HfO2-Si and YbGdSi(O) EBC bond coat top coat systems for SiCSiC CMC have been summarized. The high temperature thermomechanical creep, fatigue and oxidation resistance have been investigated in the laboratory simulated high-heat-flux environmental test conditions. The advanced NASA EBC systems showed promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  19. Deuterium trapping in tungsten

    Science.gov (United States)

    Poon, Michael

    Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation. Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation. The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D2 molecules inside the void with a trap energy of 1.2 eV. Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

  20. Deuterium trapping in tungsten

    International Nuclear Information System (INIS)

    Poon, M.

    2004-01-01

    Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. . Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D 2 molecules inside the void with a trap energy of 1.2 eV. . Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

  1. Deuterium trapping in tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Poon, M

    2004-07-01

    Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. . Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D{sub 2} molecules inside the void with a trap energy of 1.2 eV. . Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

  2. Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

    Science.gov (United States)

    Panda, D. K.; Lenka, T. R.

    2017-12-01

    In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is investigated for different gate insulators such as SiO2, Al2O3/Ga2O3/GdO3, HfO2/SiO2, La2O3/SiO2 and HfO2 with different trap densities by IFM based TCAD simulation. In order to analyze this an analytical model of drain current low frequency noise is developed. The model is developed by considering 2DEG carrier fluctuations, mobility fluctuations and the effects of 2DEG charge carrier fluctuations on the mobility. In the study of different gate insulators it is observed that carrier fluctuation is the dominant low frequency noise source and the non-uniform exponential distribution is critical to explain LFN behavior, so the analytical model is developed by considering uniform distribution of trap density. The model is validated with available experimental data from literature. The effect of total number of traps and gate length scaling on this low frequency noise due to different gate dielectrics is also investigated.

  3. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

    Directory of Open Access Journals (Sweden)

    Gloux Florence

    2011-01-01

    Full Text Available Abstract Ge nanocrystals (Ge-NCs embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices.

  4. The drift-diffusion interpretation of the electron current within the organic semiconductor characterized by the bulk single energy trap level

    Science.gov (United States)

    Cvikl, B.

    2010-01-01

    The closed solution for the internal electric field and the total charge density derived in the drift-diffusion approximation for the model of a single layer organic semiconductor structure characterized by the bulk shallow single trap-charge energy level is presented. The solutions for two examples of electric field boundary conditions are tested on room temperature current density-voltage data of the electron conducting aluminum/tris(8-hydroxyquinoline aluminum/calcium structure [W. Brütting et al., Synth. Met. 122, 99 (2001)] for which jexp∝Va3.4, within the interval of bias 0.4 V≤Va≤7. In each case investigated the apparent electron mobility determined at given bias is distributed within a given, finite interval of values. The bias dependence of the logarithm of their lower limit, i.e., their minimum values, is found to be in each case, to a good approximation, proportional to the square root of the applied electric field. On account of the bias dependence as incorporated in the minimum value of the apparent electron mobility the spatial distribution of the organic bulk electric field as well as the total charge density turn out to be bias independent. The first case investigated is based on the boundary condition of zero electric field at the electron injection interface. It is shown that for minimum valued apparent mobilities, the strong but finite accumulation of electrons close to the anode is obtained, which characterize the inverted space charge limited current (SCLC) effect. The second example refers to the internal electric field allowing for self-adjustment of its boundary values. The total electron charge density is than found typically to be of U shape, which may, depending on the parameters, peak at both or at either Alq3 boundary. It is this example in which the proper SCLC effect is consequently predicted. In each of the above two cases, the calculations predict the minimum values of the electron apparent mobility, which substantially

  5. Analysis of single-cell differences by use of an on-chip microculture system and optical trapping.

    Science.gov (United States)

    Wakamoto, Y; Inoue, I; Moriguchi, H; Yasuda, K

    2001-09-01

    A method is described for continuous observation of isolated single cells that enables genetically identical cells to be compared; it uses an on-chip microculture system and optical tweezers. Photolithography is used to construct microchambers with 5-microm-high walls made of thick photoresist (SU-8) on the surface of a glass slide. These microchambers are connected by a channel through which cells are transported, by means of optical tweezers, from a cultivation microchamber to an analysis microchamber, or from the analysis microchamber to a waste microchamber. The microchambers are covered with a semi-permeable membrane to separate them from nutrient medium circulating through a "cover chamber" above. Differential analysis of isolated direct descendants of single cells showed that this system could be used to compare genetically identical cells under contamination-free conditions. It should thus help in the clarification of heterogeneous phenomena, for example unequal cell division and cell differentiation.

  6. High-Q energy trapping of temperature-stable shear waves with Lamé cross-sectional polarization in a single crystal silicon waveguide

    Science.gov (United States)

    Tabrizian, R.; Daruwalla, A.; Ayazi, F.

    2016-03-01

    A multi-port electrostatically driven silicon acoustic cavity is implemented that efficiently traps the energy of a temperature-stable eigen-mode with Lamé cross-sectional polarization. Dispersive behavior of propagating and evanescent guided waves in a ⟨100⟩-aligned single crystal silicon waveguide is used to engineer the acoustic energy distribution of a specific shear eigen-mode that is well known for its low temperature sensitivity when implemented in doped single crystal silicon. Such an acoustic energy trapping in the central region of the acoustic cavity geometry and far from substrate obviates the need for narrow tethers that are conventionally used for non-destructive and high quality factor (Q) energy suspension in MEMS resonators; therefore, the acoustically engineered waveguide can simultaneously serve as in-situ self-oven by passing large uniformly distributed DC currents through its body and without any concern about perturbing the mode shape or deforming narrow supports. Such a stable thermo-structural performance besides large turnover temperatures than can be realized in Lamé eigen-modes make this device suitable for implementation of ultra-stable oven-controlled oscillators. 78 MHz prototypes implemented in arsenic-doped single crystal silicon substrates with different resistivity are transduced by in- and out-of-plane narrow-gap capacitive ports, showing high Q of ˜43k. The low resistivity device shows an overall temperature-induced frequency drift of 200 ppm over the range of -20 °C to 80 °C, which is ˜15× smaller compared to overall frequency drift measured for the similar yet high resistivity device in the same temperature range. Furthermore, a frequency tuning of ˜2100 ppm is achieved in high resistivity device by passing 45 mA DC current through its body. Continuous operation of the device under such a self-ovenizing current over 10 days did not induce frequency instability or degradation in Q.

  7. Combining Single-Molecule Optical Trapping and Small-Angle X-Ray Scattering Measurements to Compute the Persistence Length of a Protein ER/K alpha-Helix

    DEFF Research Database (Denmark)

    Sivaramakrishnan, S.; Sung, J.; Ali, M.

    2009-01-01

    as a force transducer, rigid spacer, or flexible linker in proteins. In this study, we quantity this flexibility in terms of persistence length, namely the length scale over which it is rigid. We use single-molecule optical trapping and small-angle x-ray scattering, combined with Monte Carlo simulations...

  8. Trapped antihydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Butler, E., E-mail: eoin.butler@cern.ch [CERN, Physics Department (Switzerland); Andresen, G. B. [Aarhus University, Department of Physics and Astronomy (Denmark); Ashkezari, M. D. [Simon Fraser University, Department of Physics (Canada); Baquero-Ruiz, M. [University of California, Department of Physics (United States); Bertsche, W. [Swansea University, Department of Physics (United Kingdom); Bowe, P. D. [Aarhus University, Department of Physics and Astronomy (Denmark); Cesar, C. L. [Universidade Federal do Rio de Janeiro, Instituto de Fisica (Brazil); Chapman, S. [University of California, Department of Physics (United States); Charlton, M.; Deller, A.; Eriksson, S. [Swansea University, Department of Physics (United Kingdom); Fajans, J. [University of California, Department of Physics (United States); Friesen, T.; Fujiwara, M. C. [University of Calgary, Department of Physics and Astronomy (Canada); Gill, D. R. [TRIUMF (Canada); Gutierrez, A. [University of British Columbia, Department of Physics and Astronomy (Canada); Hangst, J. S. [Aarhus University, Department of Physics and Astronomy (Denmark); Hardy, W. N. [University of British Columbia, Department of Physics and Astronomy (Canada); Hayden, M. E. [Simon Fraser University, Department of Physics (Canada); Humphries, A. J. [Swansea University, Department of Physics (United Kingdom); Collaboration: ALPHA Collaboration; and others

    2012-12-15

    Precision spectroscopic comparison of hydrogen and antihydrogen holds the promise of a sensitive test of the Charge-Parity-Time theorem and matter-antimatter equivalence. The clearest path towards realising this goal is to hold a sample of antihydrogen in an atomic trap for interrogation by electromagnetic radiation. Achieving this poses a huge experimental challenge, as state-of-the-art magnetic-minimum atom traps have well depths of only {approx}1 T ({approx}0.5 K for ground state antihydrogen atoms). The atoms annihilate on contact with matter and must be 'born' inside the magnetic trap with low kinetic energies. At the ALPHA experiment, antihydrogen atoms are produced from antiprotons and positrons stored in the form of non-neutral plasmas, where the typical electrostatic potential energy per particle is on the order of electronvolts, more than 10{sup 4} times the maximum trappable kinetic energy. In November 2010, ALPHA published the observation of 38 antiproton annihilations due to antihydrogen atoms that had been trapped for at least 172 ms and then released-the first instance of a purely antimatter atomic system confined for any length of time (Andresen et al., Nature 468:673, 2010). We present a description of the main components of the ALPHA traps and detectors that were key to realising this result. We discuss how the antihydrogen atoms were identified and how they were discriminated from the background processes. Since the results published in Andresen et al. (Nature 468:673, 2010), refinements in the antihydrogen production technique have allowed many more antihydrogen atoms to be trapped, and held for much longer times. We have identified antihydrogen atoms that have been trapped for at least 1,000 s in the apparatus (Andresen et al., Nature Physics 7:558, 2011). This is more than sufficient time to interrogate the atoms spectroscopically, as well as to ensure that they have relaxed to their ground state.

  9. Synergistic effect of single-electron-trapped oxygen vacancies and carbon species on the visible light photocatalytic activity of carbon-modified TiO2

    International Nuclear Information System (INIS)

    Wang, Xiaodong; Xue, Xiaoxiao; Liu, Xiaogang; Xing, Xing; Li, Qiuye; Yang, Jianjun

    2015-01-01

    Carbon-modified TiO 2 (CT) nanoparticles were prepared via a two-step method of heat treatment without the resorcinol-formaldehyde (RF) polymer. As-prepared CT nanoparticles were characterized by means of X-ray diffraction (XRD), UV–Vis diffuse reflectance spectroscopy (UV–Vis/DRS), transmission electron microscopy (TEM), N 2 adsorption–desorption isotherms, thermal analysis (TA), electron spin resonance (ESR), and X-ray photoelectron spectroscopy (XPS). The visible light photocatalytic activities were evaluated on the basis of the degradation of methyl orange (MO). The synergistic effect of single-electron-trapped oxygen vacancies (SETOVs) and the carbon species on the visible light photocatalytic activities of the CT nanoparticles were discussed. It was found that the crystalline phase, the morphology, and particle size of the CT nanoparticles depended on the second heat-treatment temperature instead of the first heat-treatment temperature. The visible light photocatalytic activities were attributed to the synergistic effect of SETOVs and the carbon species, and also depended on the specific surface area of the photocatalysts. - Highlights: • Carbon-modified TiO 2 particles have been prepared without RF polymer. • The visible light photocatalytic activities of the particles have been evaluated. • The band gap energy structure of the carbon-modified TiO 2 has been proposed. • Synergistic effect of SETOVs and carbon species has been discussed. • The activities also depend on the specific surface area of the catalysts

  10. Temperature dependence of photoluminescence spectra of bilayer two-dimensional electron gases in LaAlO3/SrTiO3 superlattices: coexistence of Auger recombination and single-carrier trapping

    Directory of Open Access Journals (Sweden)

    H. J. Harsan Ma

    2015-06-01

    Full Text Available We report emerging photoluminescence (PL of bilayer two-dimensional electron gases (2DEG in LaAlO3/SrTiO3 (LAO/STO systems. A strong blue PL emerges in bilayer-2DEGs in LAO/STO/LAO/STO which doesn’t show in LAO/STO. PL band in bilayer-2DEGs includes both nearly temperature independent Auger recombination and temperature dependent free electron trapping while it crossovers from Auger recombination to single carrier trapping in LAO/STO. The PL signal of free electron trapping appears at high temperatures and it is much stronger than Auger recombination in the conducting channel in bilayer 2DEGs. This observation shows that high mobility carriers dominate the carrier dynamics in bilayer-2DEGs in LAO/STO superlattices.

  11. Ripple Trap

    Science.gov (United States)

    2006-01-01

    3 April 2006 This Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows the margin of a lava flow on a cratered plain in the Athabasca Vallis region of Mars. Remarkably, the cratered plain in this scene is essentially free of bright, windblown ripples. Conversely, the lava flow apparently acted as a trap for windblown materials, illustrated by the presence of the light-toned, wave-like texture over much of the flow. That the lava flow surface trapped windblown sand and granules better than the cratered plain indicates that the flow surface has a rougher texture at a scale too small to resolve in this image. Location near: 10.7oN, 204.5oW Image width: 3 km (1.9 mi) Illumination from: lower left Season: Northern Winter

  12. Trapped antihydrogen

    CERN Document Server

    Butler, E; Ashkezari, M D; Baquero-Ruiz, M; Bertsche, W; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Humphries, A J; Hydomako, R; Jenkins, M J; Jonsell, S; Jørgensen, L V; Kemp, S L; Kurchaninov, L; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Rasmussen, C Ø; Robicheaux, F; Sarid, E; Seif el Nasr, S; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki,Y

    2012-01-01

    Precision spectroscopic comparison of hydrogen and antihydrogen holds the promise of a sensitive test of the Charge-Parity-Time theorem and matter-antimatter equivalence. The clearest path towards realising this goal is to hold a sample of antihydrogen in an atomic trap for interrogation by electromagnetic radiation. Achieving this poses a huge experimental challenge, as state-of-the-art magnetic-minimum atom traps have well depths of only ∼1 T (∼0.5 K for ground state antihydrogen atoms). The atoms annihilate on contact with matter and must be ‘born’ inside the magnetic trap with low kinetic energies. At the ALPHA experiment, antihydrogen atoms are produced from antiprotons and positrons stored in the form of non-neutral plasmas, where the typical electrostatic potential energy per particle is on the order of electronvolts, more than 104 times the maximum trappable kinetic energy. In November 2010, ALPHA published the observation of 38 antiproton annihilations due to antihydrogen atoms that had been ...

  13. Intrinsic charge trapping in amorphous oxide films: status and challenges

    Science.gov (United States)

    Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

    2018-06-01

    We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection

  14. Electromagnetic trapping of neutral atoms

    International Nuclear Information System (INIS)

    Metcalf, H.J.

    1986-01-01

    Cooling and trapping of neutral atoms is a new branch of applied physics that has potential for application in many areas. The authors present an introduction to laser cooling and magnetic trapping. Some basic ideas and fundamental limitations are discussed, and the first successful experiments are reviewed. Trapping a neutral object depends on the interaction between an inhomogeneous electromagnetic field and a multiple moment that results in the exchange of kinetic for potential energy. In neutral atom traps, the potential energy must be stored as internal atomic energy, resulting in two immediate and extremely important consequences. First, the atomic energy levels will necessarily shift as the atoms move in the trap, and, second, practical traps for ground state neutral atoms atr necessarily very shallow compared to thermal energy. This small depth also dictates stringent vacuum requirements because a trapped atom cannot survive a single collision with a thermal energy background gas molecule. Neutral trapping, therefore, depends on substantial cooling of a thermal atomic sample and is inextricably connected with the cooling process

  15. Mini ion trap mass spectrometer

    Science.gov (United States)

    Dietrich, D.D.; Keville, R.F.

    1995-09-19

    An ion trap is described which operates in the regime between research ion traps which can detect ions with a mass resolution of better than 1:10{sup 9} and commercial mass spectrometers requiring 10{sup 4} ions with resolutions of a few hundred. The power consumption is kept to a minimum by the use of permanent magnets and a novel electron gun design. By Fourier analyzing the ion cyclotron resonance signals induced in the trap electrodes, a complete mass spectra in a single combined structure can be detected. An attribute of the ion trap mass spectrometer is that overall system size is drastically reduced due to combining a unique electron source and mass analyzer/detector in a single device. This enables portable low power mass spectrometers for the detection of environmental pollutants or illicit substances, as well as sensors for on board diagnostics to monitor engine performance or for active feedback in any process involving exhausting waste products. 10 figs.

  16. Operation mode switchable charge-trap memory based on few-layer MoS2

    Science.gov (United States)

    Hou, Xiang; Yan, Xiao; Liu, Chunsen; Ding, Shijin; Zhang, David Wei; Zhou, Peng

    2018-03-01

    Ultrathin layered two-dimensional (2D) semiconductors like MoS2 and WSe2 have received a lot of attention because of their excellent electrical properties and potential applications in electronic devices. We demonstrate a charge-trap memory with two different tunable operation modes based on a few-layer MoS2 channel and an Al2O3/HfO2/Al2O3 charge storage stack. Our device shows excellent memory properties under the traditional three-terminal operation mode. More importantly, unlike conventional charge-trap devices, this device can also realize the memory performance with just two terminals (drain and source) because of the unique atomic crystal electrical characteristics. Under the two-terminal operation mode, the erase/program current ratio can reach up to 104 with a stable retention property. Our study indicates that the conventional charge-trap memory cell can also realize the memory performance without the gate terminal based on novel two dimensional materials, which is meaningful for low power consumption and high integration density applications.

  17. Status and outlook of CHIP-TRAP: The Central Michigan University high precision Penning trap

    Science.gov (United States)

    Redshaw, M.; Bryce, R. A.; Hawks, P.; Gamage, N. D.; Hunt, C.; Kandegedara, R. M. E. B.; Ratnayake, I. S.; Sharp, L.

    2016-06-01

    At Central Michigan University we are developing a high-precision Penning trap mass spectrometer (CHIP-TRAP) that will focus on measurements with long-lived radioactive isotopes. CHIP-TRAP will consist of a pair of hyperbolic precision-measurement Penning traps, and a cylindrical capture/filter trap in a 12 T magnetic field. Ions will be produced by external ion sources, including a laser ablation source, and transported to the capture trap at low energies enabling ions of a given m / q ratio to be selected via their time-of-flight. In the capture trap, contaminant ions will be removed with a mass-selective rf dipole excitation and the ion of interest will be transported to the measurement traps. A phase-sensitive image charge detection technique will be used for simultaneous cyclotron frequency measurements on single ions in the two precision traps, resulting in a reduction in statistical uncertainty due to magnetic field fluctuations.

  18. Orientation and thickness dependence of magnetic levitation force and trapped magnetic field of single grain YBa{sub 2}Cu{sub 3}O{sub 7-y} bulk superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Y.; Go, S. J.; Joo, H. T. [Korea Science Academy of Korea Advanced Institute of Science and Technology, Pusan (Korea, Republic of); Lee, Y. J.; Park, S. D.; Jun, B. H.; KIm, C. J. [Neutron Utilization Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2017-03-15

    The effects of the crystallographic orientation and sample thickness on the magnetic levitation forces (F) and trapped magnetic field (B) of single grain YBCO bulk superconductors were examined. Single grain YBCO samples with a (001), (110) or (100) surface were used as the test samples. The samples used for the force-distance (F-d) measurement were cooled at 77 K without a magnetic field (zero field cooling, ZFC), whereas the samples used for the B measurement were cooled under the external magnetic field of a Nd-B-Fe permanent magnet (field cooling, FC). It was found that F and B of the (001) surface were higher than those of the (110) or (100) surface, which is attributed to the higher critical current density (J{sub c}) of the (001) surface. For the (001) samples with t=5–18 mm, the maximum magnetic levitation forces (F{sub max}s) of the ZFC samples were larger than 40 N. About 80% of the applied magnetic field was trapped in the FC samples. However, the F and B decreased rapidly as t decreased below 5 mm. There exists a critical sample thickness (t=5 mm for the experimental condition of this study) for maintaining the large levitation/trapping properties, which is dependent on the material properties and magnitude of the external magnetic fields.

  19. Trace detection of organic compounds in complex sample matrixes by single photon ionization ion trap mass spectrometry: real-time detection of security-relevant compounds and online analysis of the coffee-roasting process.

    Science.gov (United States)

    Schramm, Elisabeth; Kürten, Andreas; Hölzer, Jasper; Mitschke, Stefan; Mühlberger, Fabian; Sklorz, Martin; Wieser, Jochen; Ulrich, Andreas; Pütz, Michael; Schulte-Ladbeck, Rasmus; Schultze, Rainer; Curtius, Joachim; Borrmann, Stephan; Zimmermann, Ralf

    2009-06-01

    An in-house-built ion trap mass spectrometer combined with a soft ionization source has been set up and tested. As ionization source, an electron beam pumped vacuum UV (VUV) excimer lamp (EBEL) was used for single-photon ionization. It was shown that soft ionization allows the reduction of fragmentation of the target analytes and the suppression of most matrix components. Therefore, the combination of photon ionization with the tandem mass spectrometry (MS/MS) capability of an ion trap yields a powerful tool for molecular ion peak detection and identification of organic trace compounds in complex matrixes. This setup was successfully tested for two different applications. The first one is the detection of security-relevant substances like explosives, narcotics, and chemical warfare agents. One test substance from each of these groups was chosen and detected successfully with single photon ionization ion trap mass spectrometry (SPI-ITMS) MS/MS measurements. Additionally, first tests were performed, demonstrating that this method is not influenced by matrix compounds. The second field of application is the detection of process gases. Here, exhaust gas from coffee roasting was analyzed in real time, and some of its compounds were identified using MS/MS studies.

  20. Relationship between lung function and quantitative computed tomographic parameters of airway remodeling, air trapping, and emphysema in patients with asthma and chronic obstructive pulmonary disease: A single-center study.

    Science.gov (United States)

    Hartley, Ruth A; Barker, Bethan L; Newby, Chris; Pakkal, Mini; Baldi, Simonetta; Kajekar, Radhika; Kay, Richard; Laurencin, Marie; Marshall, Richard P; Sousa, Ana R; Parmar, Harsukh; Siddiqui, Salman; Gupta, Sumit; Brightling, Chris E

    2016-05-01

    There is a paucity of studies comparing asthma and chronic obstructive pulmonary disease (COPD) based on thoracic quantitative computed tomographic (QCT) parameters. We sought to compare QCT parameters of airway remodeling, air trapping, and emphysema between asthmatic patients and patients with COPD and explore their relationship with airflow limitation. Asthmatic patients (n = 171), patients with COPD (n = 81), and healthy subjects (n = 49) recruited from a single center underwent QCT and clinical characterization. Proximal airway percentage wall area (%WA) was significantly increased in asthmatic patients (62.5% [SD, 2.2]) and patients with COPD (62.7% [SD, 2.3]) compared with that in healthy control subjects (60.3% [SD, 2.2], P Emphysema assessed based on lung density measured by using Hounsfield units below which 15% of the voxels lie (Perc15) was a feature of COPD only (patients with COPD: mean, -964 [SD, 19.62] vs asthmatic patients: mean, -937 [SD, 22.7] and healthy subjects: mean, -937 [SD, 17.1], P < .001). Multiple regression analyses showed that the strongest predictor of lung function impairment in asthmatic patients was %WA, whereas in the COPD and asthma subgrouped with postbronchodilator FEV1 percent predicted value of less than 80%, it was air trapping. Factor analysis of QCT parameters in asthmatic patients and patients with COPD combined determined 3 components, with %WA, air trapping, and Perc15 values being the highest loading factors. Cluster analysis identified 3 clusters with mild, moderate, or severe lung function impairment with corresponding decreased lung density (Perc15 values) and increased air trapping. In asthmatic patients and patients with COPD, lung function impairment is strongly associated with air trapping, with a contribution from proximal airway narrowing in asthmatic patients. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

  1. Trapped Ion Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Maunz, Peter Lukas Wilhelm

    2017-04-01

    Qubits can be encoded in clock states of trapped ions. These states are well isolated from the environment resulting in long coherence times [1] while enabling efficient high-fidelity qubit interactions mediated by the Coulomb coupled motion of the ions in the trap. Quantum states can be prepared with high fidelity and measured efficiently using fluorescence detection. State preparation and detection with 99.93% fidelity have been realized in multiple systems [1,2]. Single qubit gates have been demonstrated below rigorous fault-tolerance thresholds [1,3]. Two qubit gates have been realized with more than 99.9% fidelity [4,5]. Quantum algorithms have been demonstrated on systems of 5 to 15 qubits [6–8].

  2. Globalisation Trapped

    Directory of Open Access Journals (Sweden)

    João Caraça

    2017-05-01

    Full Text Available The promise of making society progress through the direct applications of science was finally fulfilled in the mid-20th century. Science progressed immensely, propelled by the effects of the two world wars. The first science-based technologies saw the daylight during the 1940s and their transformative power was such that neither the military, nor subsequently the markets, allowed science to return intact to its curiosity-driven nest. Technoscience was born then and (being progressively pulled away from curiosity-driven science was able to grow enormously, erecting a formidable structure of networks of institutions that impacted decisively on the economy. It is a paradox, or maybe a trap, that the fulfillment of science’s solemn promise of ‘transforming nature’ means seeing ourselves and our Western societies entangled in crises after crises with no clear outcome in view. A redistribution of geopolitical power is under way, along with the deployment of information and communication technologies, forcing dominant structures to oscillate, as knowledge about organization and methods, marketing, design, and software begins to challenge the role of technoscience as the main vector of economic growth and wealth accumulation. What ought to be done?

  3. Diffusion to finite-size traps

    International Nuclear Information System (INIS)

    Richards, P.M.

    1986-01-01

    The survival probability of a random-walking particle is derived for hopping in a random distribution of traps of arbitrary radius and concentration. The single-center approximation is shown to be valid for times of physical interest even when the fraction of volume occupied by traps approaches unity. The theory is based on computation of the number of different potential trap regions sampled in a random walk and is confirmed by simulations on a simple-cubic lattice

  4. Status of THe-trap

    Energy Technology Data Exchange (ETDEWEB)

    Ketter, Jochen; Eronen, Tommi; Hoecker, Martin; Streubel, Sebastian; Blaum, Klaus [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Van Dyck, Robert S. Jr. [Department of Physics, University of Washington, Seattle, WA (United States)

    2012-07-01

    Originally developed at the University of Washington and relocated to the Max-Planck-Institut fuer Kernphysik in 2008, the Penning-trap spectrometer THe-Trap is specially tailored for a {sup 3}H/{sup 3}He mass-ratio measurement, from which the Q-value of the beta-decay of {sup 3}H to {sup 3}He can be derived. Improving the current best value by at least an order of magnitude will provide an important independent test parameter for the determination of the electron-antineutrino's mass by the Karlsruhe Tritium Neutrino Experiment (KATRIN). However, Penning-trap mass spectrometry has to be pushed to its limits in a dedicated experiment for a sufficiently accurate mass-ratio measurement with a relative uncertainty of 10{sup -11}. Unlike the closed-envelope, single-trap predecessor, the new spectrometer features an external ion source, owing to the radioactive nature of tritium, and two traps in order to speed up the measurement cycle. While the double-trap technique holds great promise, it also calls for more intricate procedures, such as ion transfer. Details about the recent progress of the experiment are given.

  5. Collective excitations of harmonically trapped ideal gases

    NARCIS (Netherlands)

    Van Schaeybroeck, B.; Lazarides, A.

    2009-01-01

    We theoretically study the collective excitations of an ideal gas confined in an isotropic harmonic trap. We give an exact solution to the Boltzmann-Vlasov equation; as expected for a single-component system, the associated mode frequencies are integer multiples of the trapping frequency. We show

  6. Shrew trap efficiency

    DEFF Research Database (Denmark)

    Gambalemoke, Mbalitini; Mukinzi, Itoka; Amundala, Drazo

    2008-01-01

    We investigated the efficiency of four trap types (pitfall, Sherman LFA, Victor snap and Museum Special snap traps) to capture shrews. This experiment was conducted in five inter-riverine forest blocks in the region of Kisangani. The total trapping effort was 6,300, 9,240, 5,280 and 5,460 trap......, our results indicate that pitfall traps are the most efficient for capturing shrews: not only do they have a higher efficiency (yield), but the taxonomic diversity of shrews is also higher when pitfall traps are used....

  7. Quantized motion of trapped ions

    International Nuclear Information System (INIS)

    Steinbach, J.

    1999-01-01

    This thesis is concerned with a theoretical and numerical study of the preparation and coherent manipulation of quantum states in the external and internal degrees of freedom of trapped ions. In its first part, this thesis proposes and investigates schemes for generating several nonclassical states for the quantized vibrational motion of a trapped ion. Based on dark state preparation specific laser excitation configurations are presented which, given appropriately chosen initial states, realize the desired motional states in the steady-state, indicated by the cessation of the fluorescence emitted by the ion. The focus is on the SU(1,1) intelligent states in both their single- and two-mode realization, corresponding to one- and two-dimensional motion of the ion. The presented schemes are also studied numerically using a Monte-Carlo state-vector method. The second part of the thesis describes how two vibrational degrees of freedom of a single trapped ion can be coupled through the action of suitably chosen laser excitation. Concentrating on a two-dimensional ion trap with dissimilar vibrational frequencies a variety of quantized two-mode couplings are derived. The focus is on a linear coupling that takes excitations from one mode to another. It is demonstrated how this can result in a state rotation, in which it is possible to coherently transfer the motional state of the ion between orthogonal directions without prior knowledge of that motional state. The third part of this thesis presents a new efficient method for generating maximally entangled internal states of a collection of trapped ions. The method is deterministic and independent of the number of ions in the trap. As the essential element of the scheme a mechanism for the realization of a controlled NOT operation that can operate on multiple ions is proposed. The potential application of the scheme for high-precision frequency standards is explored. (author)

  8. A Computer Model of Insect Traps in a Landscape

    Science.gov (United States)

    Manoukis, Nicholas C.; Hall, Brian; Geib, Scott M.

    2014-11-01

    Attractant-based trap networks are important elements of invasive insect detection, pest control, and basic research programs. We present a landscape-level, spatially explicit model of trap networks, focused on detection, that incorporates variable attractiveness of traps and a movement model for insect dispersion. We describe the model and validate its behavior using field trap data on networks targeting two species, Ceratitis capitata and Anoplophora glabripennis. Our model will assist efforts to optimize trap networks by 1) introducing an accessible and realistic mathematical characterization of the operation of a single trap that lends itself easily to parametrization via field experiments and 2) allowing direct quantification and comparison of sensitivity between trap networks. Results from the two case studies indicate that the relationship between number of traps and their spatial distribution and capture probability under the model is qualitatively dependent on the attractiveness of the traps, a result with important practical consequences.

  9. Single-step reinforced microextraction of polycyclic aromatic hydrocarbons from soil samples using an inside needle capillary adsorption trap with electropolymerized aniline/multi-walled carbon nanotube sorbent.

    Science.gov (United States)

    Ghiasvand, Ali Reza; Yazdankhah, Fatemeh

    2017-03-03

    A polyaniline/multi-wall carbon nanotubes (PANI/MWCNT) composite was electrodeposited on the interior surface of a platinized stainless steel capillary needle and used to prepare an inside needle capillary adsorption trap (INCAT) device. The platinization expanded the interior adsorbing surface of the needle and made it more porous and cohesive for nanocomposite film. The nanocomposite was characterized using scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FT-IR). The fabricated INCAT was fixed into a cooling capsule to fabricate a cooling-assisted INCAT (CA-INCAT) system. The CA-INCAT device was used to extract polycyclic aromatic hydrocarbons (PAHs) from solid samples followed by gas chromatography-flame ionization detection (GC-FID) determination. To obtain the best extraction efficiency, the important experimental variables were studied and optimized. Under the optimal conditions, the limits of detection (LODs) for the studied PAHs were in the range of 0.002-0.02ngg -1 . Linear dynamic ranges (LDRs) for the calibration curves were found to be 0.1-30,000ngg -1 . Relative standard deviations (RSDs%) for six replicated analysis of 1ngg -1 PAHs were obtained 7.7-11%. The CA-INCAT-GC-FID method was successfully applied for the extraction and determination of PAHs in contaminated soil samples. The results were in agreement with those obtained by a validated ultrasound-assisted solvent extraction (UA-SE) method. Copyright © 2017 Elsevier B.V. All rights reserved.

  10. Optical Trapping of Ion Coulomb Crystals

    Science.gov (United States)

    Schmidt, Julian; Lambrecht, Alexander; Weckesser, Pascal; Debatin, Markus; Karpa, Leon; Schaetz, Tobias

    2018-04-01

    The electronic and motional degrees of freedom of trapped ions can be controlled and coherently coupled on the level of individual quanta. Assembling complex quantum systems ion by ion while keeping this unique level of control remains a challenging task. For many applications, linear chains of ions in conventional traps are ideally suited to address this problem. However, driven motion due to the magnetic or radio-frequency electric trapping fields sometimes limits the performance in one dimension and severely affects the extension to higher-dimensional systems. Here, we report on the trapping of multiple barium ions in a single-beam optical dipole trap without radio-frequency or additional magnetic fields. We study the persistence of order in ensembles of up to six ions within the optical trap, measure their temperature, and conclude that the ions form a linear chain, commonly called a one-dimensional Coulomb crystal. As a proof-of-concept demonstration, we access the collective motion and perform spectrometry of the normal modes in the optical trap. Our system provides a platform that is free of driven motion and combines advantages of optical trapping, such as state-dependent confinement and nanoscale potentials, with the desirable properties of crystals of trapped ions, such as long-range interactions featuring collective motion. Starting with small numbers of ions, it has been proposed that these properties would allow the experimental study of many-body physics and the onset of structural quantum phase transitions between one- and two-dimensional crystals.

  11. St. Croix trap study

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The data set contains detailed information about the catch from 600 trap stations around St. Croix. Data fields include species caught, size data, trap location...

  12. Angular trap for macroparticles

    International Nuclear Information System (INIS)

    Aksyonov, D.S.

    2013-01-01

    Properties of angular macroparticle traps were investigated in this work. These properties are required to design vacuum arc plasma filters. The correlation between trap geometry parameters and its ability to absorb macroparticles were found. Calculations allow one to predict the behaviour of filtering abilities of separators which contain such traps in their design. Recommendations regarding the use of angular traps in filters of different builds are given.

  13. Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

    International Nuclear Information System (INIS)

    Zheng Zhi-Wei; Huo Zong-Liang; Zhu Chen-Xin; Xu Zhong-Guang; Liu Jing; Liu Ming

    2011-01-01

    In this paper, we investigate an Al 2 O 3 /HfSiO stack as the blocking layer of a metal—oxide—nitride—oxide—silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al 2 O 3 /HfO 2 stack as the blocking layer, the sample with the Al 2 O 3 /HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al 2 O 3 /HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications. (interdisciplinary physics and related areas of science and technology)

  14. Ball-grid array architecture for microfabricated ion traps

    Science.gov (United States)

    Guise, Nicholas D.; Fallek, Spencer D.; Stevens, Kelly E.; Brown, K. R.; Volin, Curtis; Harter, Alexa W.; Amini, Jason M.; Higashi, Robert E.; Lu, Son Thai; Chanhvongsak, Helen M.; Nguyen, Thi A.; Marcus, Matthew S.; Ohnstein, Thomas R.; Youngner, Daniel W.

    2015-05-01

    State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensive surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with 40Ca+ ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with 171Yb+ ions in a second BGA trap.

  15. Ball-grid array architecture for microfabricated ion traps

    International Nuclear Information System (INIS)

    Guise, Nicholas D.; Fallek, Spencer D.; Stevens, Kelly E.; Brown, K. R.; Volin, Curtis; Harter, Alexa W.; Amini, Jason M.; Higashi, Robert E.; Lu, Son Thai; Chanhvongsak, Helen M.; Nguyen, Thi A.; Marcus, Matthew S.; Ohnstein, Thomas R.; Youngner, Daniel W.

    2015-01-01

    State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensive surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with 40 Ca + ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with 171 Yb + ions in a second BGA trap

  16. The Aarhus Ion Micro-Trap Project

    DEFF Research Database (Denmark)

    Miroshnychenko, Yevhen; Nielsen, Otto; Poulsen, Gregers

    As part of our involvement in the EU MICROTRAP project, we have designed, manufactured and assembled a micro-scale ion trap with integrated optical fibers. These prealigned fibers will allow delivering cooling laser light to single ions. Therefore, such a trap will not require any direct optical...... and installed in an ultra high vacuum chamber, which includes an ablation oven for all-optical loading of the trap [2]. The next steps on the project are to demonstrate the operation of the micro-trap and the cooling of ions using fiber delivered light. [1] D. Grant, Development of Micro-Scale Ion traps, Master...... Thesis (2008). [2] R.J. Hendricks, D.M. Grant, P.F. Herskind, A. Dantan and M. Drewsen, An all-optical ion-loading technique for scalable microtrap architectures, Applied Physics B, 88, 507 (2007)....

  17. Characterization of Wet-Heat Inactivation of Single Spores of Bacillus Species by Dual-Trap Raman Spectroscopy and Elastic Light Scattering▿

    Science.gov (United States)

    Zhang, Pengfei; Kong, Lingbo; Setlow, Peter; Li, Yong-qing

    2010-01-01

    Dual-trap laser tweezers Raman spectroscopy (LTRS) and elastic light scattering (ELS) were used to investigate dynamic processes during high-temperature treatment of individual spores of Bacillus cereus, Bacillus megaterium, and Bacillus subtilis in water. Major conclusions from these studies included the following. (i) After spores of all three species were added to water at 80 to 90°C, the level of the 1:1 complex of Ca2+ and dipicolinic acid (CaDPA; ∼25% of the dry weight of the spore core) in individual spores remained relatively constant during a highly variable lag time (Tlag), and then CaDPA was released within 1 to 2 min. (ii) The Tlag values prior to rapid CaDPA release and thus the times for wet-heat killing of individual spores of all three species were very heterogeneous. (iii) The heterogeneity in kinetics of wet-heat killing of individual spores was not due to differences in the microscopic physical environments during heat treatment. (iv) During the wet-heat treatment of spores of all three species, spore protein denaturation largely but not completely accompanied rapid CaDPA release, as some changes in protein structure preceded rapid CaDPA release. (v) Changes in the ELS from individual spores of all three species were strongly correlated with the release of CaDPA. The ELS intensities of B. cereus and B. megaterium spores decreased gradually and reached minima at T1 when ∼80% of spore CaDPA was released, then increased rapidly until T2 when full CaDPA release was complete, and then remained nearly constant. The ELS intensity of B. subtilis spores showed similar features, although the intensity changed minimally, if at all, prior to T1. (vi) Carotenoids in B. megaterium spores' inner membranes exhibited two changes during heat treatment. First, the carotenoid's two Raman bands at 1,155 and 1,516 cm−1 decreased rapidly to a low value and to zero, respectively, well before Tlag, and then the residual 1,155-cm−1 band disappeared, in parallel

  18. Luminescence and charge trapping in Cs.sub.2./sub.HfCl.sub.6./sub. single crystals: optical and magnetic resonance spectroscopy study

    Czech Academy of Sciences Publication Activity Database

    Král, Robert; Babin, Vladimir; Mihóková, Eva; Buryi, Maksym; Laguta, Valentyn; Nitsch, Karel; Nikl, Martin

    2017-01-01

    Roč. 121, č. 22 (2017), s. 12375-12382 ISSN 1932-7447 R&D Projects: GA MŠk LO1409; GA ČR GA17-09933S Institutional support: RVO:68378271 Keywords : Cs2HfCl6 * single crystal * luminescence * temperature dependence * EPR spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.536, year: 2016

  19. Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

    Science.gov (United States)

    He, Long-Fei; Zhu, Hao; Xu, Jing; Liu, Hao; Nie, Xin-Ran; Chen, Lin; Sun, Qing-Qing; Xia, Yang; Wei Zhang, David

    2017-11-01

    The continuous scaling and challenges in device integrations in modern portable electronic products have aroused many scientific interests, and a great deal of effort has been made in seeking solutions towards a more microminiaturized package assembled with smaller and more powerful components. In this study, an embedded light-erasable charge-trapping memory with a high-k dielectric stack (Al2O3/HfO2/Al2O3) and an atomically thin MoS2 channel has been fabricated and fully characterized. The memory exhibits a sufficient memory window, fast programming and erasing (P/E) speed, and high On/Off current ratio up to 107. Less than 25% memory window degradation is observed after projected 10-year retention, and the device functions perfectly after 8000 P/E operation cycles. Furthermore, the programmed device can be fully erased by incident light without electrical assistance. Such excellent memory performance originates from the intrinsic properties of two-dimensional (2D) MoS2 and the engineered back-gate dielectric stack. Our integration of 2D semiconductors in the infrastructure of light-erasable charge-trapping memory is very promising for future system-on-panel applications like storage of metadata and flexible imaging arrays.

  20. Trap-induced photoconductivity in singlet fission pentacene diodes

    Energy Technology Data Exchange (ETDEWEB)

    Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing; Luan, Lin [WuHan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wu Han 430074 (China)

    2014-07-21

    This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

  1. HPLC-ESR techniques for detection of complex trapped radicals

    International Nuclear Information System (INIS)

    Tu Tiecheng; Dong Jirong; Lin Nianyun; Xie Leidong; Liu Rengzhong

    1992-01-01

    High performance liquid chromatography (HPLC) and ESR combined examination of radical species is an advanced techniques for separation and identification of complex radical species. At SRCL, Waters 990 HPLC has been used to separate the complex trapped radicals and Varian E-112 ESR spectrometer to record the spectra of single trapped radicals after HPLC separation. The advantages of the combined techniques are described as bellow: HPLC is used to separate the long-lived complex trapped radicals derived from reaction of short-lived radicals with spin trap. ESR spectra from single trapped radicals, obtained following HPLC separation of complex trapped radicals, are recorded one by one and well resolved. The structures of short-lived radicals can be inferred from the ESR spectra of the long-lived trapped radicals

  2. Traps in Zirconium Alloys Oxide Layers

    Directory of Open Access Journals (Sweden)

    Helmar Frank

    2005-01-01

    Full Text Available Oxide films long-time grown on tubes of three types of zirconium alloys in water and in steam were investigated, by analysing I-V characteristic measured at constant voltages with various temperatures. Using theoretical concepts of Rose [3] and Gould [5], ZryNbSn(Fe proved to have an exponential distribution of trapping centers below the conduction band edge, wheras Zr1Nb and IMP Zry-4 proved to have single energy trap levels.

  3. Ion Trap Quantum Computing

    Science.gov (United States)

    2011-12-01

    variations of ion traps, including (1) the cylindrically symmetric 3D ring trap; (2) the linear trap with a combination of cavity QED; (#) the symmetric...concepts of quantum information. The major demonstration has been the test of a Bell inequality as demonstrated by Rowe et al. [50] and a decoherence...famous physics experiment [62]. Wolfgang Paul demonstrated a similar apparatus during his Nobel Prize speech [63]. This device is hyperbolic- parabolic

  4. Towards trapped antihydrogen

    CERN Document Server

    Jorgensen, L V; Bertsche, W; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Page, R D; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

    2008-01-01

    Substantial progress has been made in the last few years in the nascent field of antihydrogen physics. The next big step forward is expected to be the trapping of the formed antihydrogen atoms using a magnetic multipole trap. ALPHA is a new international project that started to take data in 2006 at CERN’s Antiproton Decelerator facility. The primary goal of ALPHA is stable trapping of cold antihydrogen atoms to facilitate measurements of its properties. We discuss the status of the ALPHA project and the prospects for antihydrogen trapping.

  5. Optical trapping for analytical biotechnology.

    Science.gov (United States)

    Ashok, Praveen C; Dholakia, Kishan

    2012-02-01

    We describe the exciting advances of using optical trapping in the field of analytical biotechnology. This technique has opened up opportunities to manipulate biological particles at the single cell or even at subcellular levels which has allowed an insight into the physical and chemical mechanisms of many biological processes. The ability of this technique to manipulate microparticles and measure pico-Newton forces has found several applications such as understanding the dynamics of biological macromolecules, cell-cell interactions and the micro-rheology of both cells and fluids. Furthermore we may probe and analyse the biological world when combining trapping with analytical techniques such as Raman spectroscopy and imaging. Copyright © 2011 Elsevier Ltd. All rights reserved.

  6. High-fidelity operations in microfabricated surface ion traps

    Science.gov (United States)

    Maunz, Peter

    2017-04-01

    Trapped ion systems can be used to implement quantum computation as well as quantum simulation. To scale these systems to the number of qubits required to solve interesting problems in quantum chemistry or solid state physics, the use of large multi-zone ion traps has been proposed. Microfabrication enables the realization of surface electrode ion traps with complex electrode structures. While these traps may enable the scaling of trapped ion quantum information processing (QIP), microfabricated ion traps also pose several technical challenges. Here, we present Sandia's trap fabrication capabilities and characterize trap properties and shuttling operations in our most recent high optical access trap (HOA-2). To demonstrate the viability of Sandia's microfabricated ion traps for QIP we realize robust single and two-qubit gates and characterize them using gate set tomography (GST). In this way we are able to demonstrate the first single qubit gates with a diamond norm of less than 1 . 7 ×10-4 , below a rigorous fault tolerance threshold for general noise of 6 . 7 ×10-4. Furthermore, we realize Mølmer-Sørensen two qubit gates with a process fidelity of 99 . 58(6) % also characterized by GST. These results demonstrate the viability of microfabricated surface traps for state of the art quantum information processing demonstrations. This research was funded, in part, by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA).

  7. Versatile electrostatic trap

    NARCIS (Netherlands)

    van Veldhoven, J.; Bethlem, H.L.; Schnell, M.; Meijer, G.

    2006-01-01

    A four electrode electrostatic trap geometry is demonstrated that can be used to combine a dipole, quadrupole, and hexapole field. A cold packet of ND315 molecules is confined in both a purely quadrupolar and hexapolar trapping field and additionally, a dipole field is added to a hexapole field to

  8. Liquid metal cold trap

    International Nuclear Information System (INIS)

    Hundal, R.

    1976-01-01

    A cold trap assembly for removing impurities from a liquid metal is described. A hole between the incoming impure liquid metal and purified outgoing liquid metal acts as a continuous bleed means and thus prevents the accumulation of cover gases within the cold trap assembly

  9. Trapping radioactive ions

    CERN Document Server

    Kluge, Heinz-Jürgen

    2004-01-01

    Trapping devices for atomic and nuclear physics experiments with radioactive ions are becoming more and more important at accelerator facilities. While about ten years ago only one online Penning trap experiment existed, namely ISOLTRAP at ISOLDE/CERN, meanwhile almost every radioactive beam facility has installed or plans an ion trap setup. This article gives an overview on ion traps in the operation, construction or planing phase which will be used for fundamental studies with short-lived radioactive nuclides such as mass spectrometry, laser spectroscopy and nuclear decay spectroscopy. In addition, this article summarizes the use of gas cells and radiofrequency quadrupole (Paul) traps at different facilities as a versatile tool for ion beam manipulation like retardation, cooling, bunching, and cleaning.

  10. Trapping radioactive ions

    International Nuclear Information System (INIS)

    Kluge, H.-J.; Blaum, K.

    2004-01-01

    Trapping devices for atomic and nuclear physics experiments with radioactive ions are becoming more and more important at accelerator facilities. While about ten years ago only one online Penning trap experiment existed, namely ISOLTRAP at ISOLDE/CERN, meanwhile almost every radioactive beam facility has installed or plans an ion trap setup. This article gives an overview on ion traps in the operation, construction or planing phase which will be used for fundamental studies with short-lived radioactive nuclides such as mass spectrometry, laser spectroscopy and nuclear decay spectroscopy. In addition, this article summarizes the use of gas cells and radiofrequency quadrupole (Paul) traps at different facilities as a versatile tool for ion beam manipulation like retardation, cooling, bunching, and cleaning

  11. Defect trapping of deuterium implanted in aluminium

    International Nuclear Information System (INIS)

    Kido, Y.; Kakeno, M.; Yamada, K.; Hioki, T.; Kawamoto, J.

    1982-01-01

    The behaviour of deuterium implanted in Al was studied by the D( 3 He,p) 4 He and the D(d,p)T nuclear reactions. Changes of the depth profiles of the deuterium after heat treatments indicated that the implanted deuterium was trapped by the defect produced during the deuterium implantation and the release probability of the trapped deuterium increased as the specimen temperature was raised. Assuming a thermal equilibrium locally in the region of high defect concentration, the trapping energy of deuterium in Al was determined to be 0.12eV. Since the release probability for the single crystal was considerably larger than that for the polycrystal specimens, the deuterium was considered to be strongly trapped in the grain boundaries. Distributions of displaced Al atoms and the recovery of the lattice damage by annealing were measured by the channelling technique. (author)

  12. Line-Trapping of Codling Moth (Lepidoptera: Tortricidae): A Novel Approach to Improving the Precision of Capture Numbers in Traps Monitoring Pest Density.

    Science.gov (United States)

    Adams, C G; McGhee, P S; Schenker, J H; Gut, L J; Miller, J R

    2017-08-01

    This field study of codling moth, Cydia pomonella (L.), response to single versus multiple monitoring traps baited with codlemone demonstrates that precision of a given capture number is alarmingly poor when the population is held constant by releasing moths. Captures as low as zero and as high as 12 males per single trap are to be expected where the catch mode is three. Here, we demonstrate that the frequency of false negatives and overestimated positives for codling moth trapping can be substantially reduced by employing the tactic of line-trapping, where five traps were deployed 4 m apart along a row of apple trees. Codling moth traps spaced closely competed only slightly. Therefore, deploying five traps closely in a line is a sampling technique nearly as good as deploying five traps spaced widely. But line trapping offers a substantial savings in time and therefore cost when servicing aggregated versus distributed traps. As the science of pest management matures by mastering the ability to translate capture numbers into estimates of absolute pest density, it will be important to employ a tactic like line-trapping so as to shrink the troublesome variability associated with capture numbers in single traps that thwarts accurate decisions about if and when to spray. Line-trapping might similarly increase the reliability and utility of density estimates derived from capture numbers in monitoring traps for various pest and beneficial insects. © The Authors 2017. Published by Oxford University Press on behalf of Entomological Society of America.

  13. Electrical transport of bottom-up grown single-crystal Si1-xGex nanowire

    International Nuclear Information System (INIS)

    Yang, W F; Lee, S J; Liang, G C; Whang, S J; Kwong, D L

    2008-01-01

    In this work, we fabricated an Si 1-x Ge x nanowire (NW) metal-oxide-semiconductor field-effect transistor (MOSFET) by using bottom-up grown single-crystal Si 1-x Ge x NWs integrated with HfO 2 gate dielectric, TaN/Ta gate electrode and Pd Schottky source/drain electrodes, and investigated the electrical transport properties of Si 1-x Ge x NWs. It is found that both undoped and phosphorus-doped Si 1-x Ge x NW MOSFETs exhibit p-MOS operation while enhanced performance of higher I on ∼100 nA and I on /I off ∼10 5 are achieved from phosphorus-doped Si 1-x Ge x NWs, which can be attributed to the reduction of the effective Schottky barrier height (SBH). Further improvement in gate control with a subthreshold slope of 142 mV dec -1 was obtained by reducing HfO 2 gate dielectric thickness. A comprehensive study on SBH between the Si 1-x Ge x NW channel and Pd source/drain shows that a doped Si 1-x Ge x NW has a lower effective SBH due to a thinner depletion width at the junction and the gate oxide thickness has negligible effect on effective SBH

  14. Novel Ion Trap Design for Strong Ion-Cavity Coupling

    Directory of Open Access Journals (Sweden)

    Alejandro Márquez Seco

    2016-04-01

    Full Text Available We present a novel ion trap design which facilitates the integration of an optical fiber cavity into the trap structure. The optical fibers are confined inside hollow electrodes in such a way that tight shielding and free movement of the fibers are simultaneously achievable. The latter enables in situ optimization of the overlap between the trapped ions and the cavity field. Through numerical simulations, we systematically analyze the effects of the electrode geometry on the trapping characteristics such as trap depths, secular frequencies and the optical access angle. Additionally, we simulate the effects of the presence of the fibers and confirm the robustness of the trapping potential. Based on these simulations and other technical considerations, we devise a practical trap configuration that isviable to achieve strong coupling of a single ion.

  15. Measurement of Secular Motion Frequency in Miniature Paul Trap to Ascertain the Stability Parameters

    International Nuclear Information System (INIS)

    Bin, Guo; Hua, Guan; Qu, Liu; Yao, Huang; Xue-Ren, Huang; Ke-Lin, Gao

    2010-01-01

    40 Ca + ions are trapped and laser cooled in a miniature Paul trap. The secular motion was observed by the radio-frequency resonance of the ion cloud and Zeeman profile sidebands of a single ion experimentally. The trap stability parameters a and q are determined with an uncertainty under 1 % by the secular motion frequency measurement. The trap efficiency is 0.75. A practicable suggestion is given for the benefits of a new trap design. (atomic and molecular physics)

  16. Optical Trapping of Ion Coulomb Crystals

    Directory of Open Access Journals (Sweden)

    Julian Schmidt

    2018-05-01

    Full Text Available The electronic and motional degrees of freedom of trapped ions can be controlled and coherently coupled on the level of individual quanta. Assembling complex quantum systems ion by ion while keeping this unique level of control remains a challenging task. For many applications, linear chains of ions in conventional traps are ideally suited to address this problem. However, driven motion due to the magnetic or radio-frequency electric trapping fields sometimes limits the performance in one dimension and severely affects the extension to higher-dimensional systems. Here, we report on the trapping of multiple barium ions in a single-beam optical dipole trap without radio-frequency or additional magnetic fields. We study the persistence of order in ensembles of up to six ions within the optical trap, measure their temperature, and conclude that the ions form a linear chain, commonly called a one-dimensional Coulomb crystal. As a proof-of-concept demonstration, we access the collective motion and perform spectrometry of the normal modes in the optical trap. Our system provides a platform that is free of driven motion and combines advantages of optical trapping, such as state-dependent confinement and nanoscale potentials, with the desirable properties of crystals of trapped ions, such as long-range interactions featuring collective motion. Starting with small numbers of ions, it has been proposed that these properties would allow the experimental study of many-body physics and the onset of structural quantum phase transitions between one- and two-dimensional crystals.

  17. Nematode-Trapping Fungi.

    Science.gov (United States)

    Jiang, Xiangzhi; Xiang, Meichun; Liu, Xingzhong

    2017-01-01

    Nematode-trapping fungi are a unique and intriguing group of carnivorous microorganisms that can trap and digest nematodes by means of specialized trapping structures. They can develop diverse trapping devices, such as adhesive hyphae, adhesive knobs, adhesive networks, constricting rings, and nonconstricting rings. Nematode-trapping fungi have been found in all regions of the world, from the tropics to Antarctica, from terrestrial to aquatic ecosystems. They play an important ecological role in regulating nematode dynamics in soil. Molecular phylogenetic studies have shown that the majority of nematode-trapping fungi belong to a monophyletic group in the order Orbiliales (Ascomycota). Nematode-trapping fungi serve as an excellent model system for understanding fungal evolution and interaction between fungi and nematodes. With the development of molecular techniques and genome sequencing, their evolutionary origins and divergence, and the mechanisms underlying fungus-nematode interactions have been well studied. In recent decades, an increasing concern about the environmental hazards of using chemical nematicides has led to the application of these biological control agents as a rapidly developing component of crop protection.

  18. Evaluation method for acoustic trapping performance by tracking motion of trapped microparticle

    Science.gov (United States)

    Lim, Hae Gyun; Ham Kim, Hyung; Yoon, Changhan

    2018-05-01

    We report a method to evaluate the performances of a single-beam acoustic tweezer using a high-frequency ultrasound transducer. The motion of a microparticle trapped by a 45-MHz single-element transducer was captured and analyzed to deduce the magnitude of trapping force. In the proposed method, the motion of a trapped microparticle was analyzed from a series of microscopy images to compute trapping force; thus, no additional equipment such as microfluidics is required. The method could be used to estimate the effective trapping force in an acoustic tweezer experiment to assess cell membrane deformability by attaching a microbead to the surface of a cell and tracking the motion of the trapped bead, which is similar to a bead-based assay that uses optical tweezers. The results showed that the trapping force increased with increasing acoustic intensity and duty factor, but the force eventually reached a plateau at a higher acoustic intensity. They demonstrated that this method could be used as a simple tool to evaluate the performance and to optimize the operating conditions of acoustic tweezers.

  19. Quantum information processing with trapped ions

    International Nuclear Information System (INIS)

    Haeffner, H.; Haensel, W.; Rapol, U.; Koerber, T.; Benhelm, J.; Riebe, M.; Chek-al-Kar, D.; Schmidt-Kaler, F.; Becher, C.; Roos, C.; Blatt, R.

    2005-01-01

    Single Ca + ions and crystals of Ca + ions are confined in a linear Paul trap and are investigated for quantum information processing. Here we report on recent experimental advancements towards a quantum computer with such a system. Laser-cooled trapped ions are ideally suited systems for the investigation and implementation of quantum information processing as one can gain almost complete control over their internal and external degrees of freedom. The combination of a Paul type ion trap with laser cooling leads to unique properties of trapped cold ions, such as control of the motional state down to the zero-point of the trapping potential, a high degree of isolation from the environment and thus a very long time available for manipulations and interactions at the quantum level. The very same properties make single trapped atoms and ions well suited for storing quantum information in long lived internal states, e.g. by encoding a quantum bit (qubit) of information within the coherent superposition of the S 1/2 ground state and the metastable D 5/2 excited state of Ca + . Recently we have achieved the implementation of simple algorithms with up to 3 qubits on an ion-trap quantum computer. We will report on methods to implement single qubit rotations, the realization of a two-qubit universal quantum gate (Cirac-Zoller CNOT-gate), the deterministic generation of multi-particle entangled states (GHZ- and W-states), their full tomographic reconstruction, the realization of deterministic quantum teleportation, its quantum process tomography and the encoding of quantum information in decoherence-free subspaces with coherence times exceeding 20 seconds. (author)

  20. Investigation of HIV-1 infected and uninfected cells using the optical trapping technique

    CSIR Research Space (South Africa)

    Ombinda-Lemboumba, Saturnin

    2017-02-01

    Full Text Available Optical trapping has emerged as an essential tool for manipulating single biological material and performing sophisticated spectroscopy analysis on individual cell. The optical trapping technique has been used to grab and immobilize cells from a...

  1. Trapping and Probing Antihydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Wurtele, Jonathan [UC Berkeley and LBNL

    2013-03-27

    Precision spectroscopy of antihydrogen is a promising path to sensitive tests of CPT symmetry. The most direct route to achieve this goal is to create and probe antihydrogen in a magnetic minimum trap. Antihydrogen has been synthesized and trapped for 1000s at CERN by the ALPHA Collaboration. Some of the challenges associated with achieving these milestones will be discussed, including mixing cryogenic positron and antiproton plasmas to synthesize antihydrogen with kinetic energy less than the trap potential of .5K. Recent experiments in which hyperfine transitions were resonantly induced with microwaves will be presented. The opportunity for gravitational measurements in traps based on detailed studies of antihydrogen dynamics will be described. The talk will conclude with a discussion future antihydrogen research that will use a new experimental apparatus, ALPHA-I.

  2. EBIT trapping program

    International Nuclear Information System (INIS)

    Elliott, S.R.; Beck, B.; Beiersdorfer, P.; Church, D.; DeWitt, D.; Knapp, D.K.; Marrs, R.E.; Schneider, D.; Schweikhard, L.

    1993-01-01

    The LLNL electron beam ion trap provides the world's only source of stationary highly charged ions up to bare U. This unique capability makes many new atomic and nuclear physics experiments possible. (orig.)

  3. Microfabricated Waveguide Atom Traps.

    Energy Technology Data Exchange (ETDEWEB)

    Jau, Yuan-Yu [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-01

    A nanoscale , microfabricated waveguide structure can in - principle be used to trap atoms in well - defined locations and enable strong photon-atom interactions . A neutral - atom platform based on this microfabrication technology will be prealigned , which is especially important for quantum - control applications. At present, there is still no reported demonstration of evanescent - field atom trapping using a microfabricated waveguide structure. We described the capabilities established by our team for future development of the waveguide atom - trapping technology at SNL and report our studies to overcome the technical challenges of loading cold atoms into the waveguide atom traps, efficient and broadband optical coupling to a waveguide, and the waveguide material for high - power optical transmission. From the atomic - physics and the waveguide modeling, w e have shown that a square nano-waveguide can be utilized t o achieve better atomic spin squeezing than using a nanofiber for first time.

  4. Search For Trapped Antihydrogen

    CERN Document Server

    Andresen, Gorm B.; Baquero-Ruiz, Marcelo; Bertsche, William; Bowe, Paul D.; Bray, Crystal C.; Butler, Eoin; Cesar, Claudio L.; Chapman, Steven; Charlton, Michael; Fajans, Joel; Friesen, Tim; Fujiwara, Makoto C.; Gill, David R.; Hangst, Jeffrey S.; Hardy, Walter N.; Hayano, Ryugo S.; Hayden, Michael E.; Humphries, Andrew J.; Hydomako, Richard; Jonsell, Svante; Jorgensen, Lars V.; Kurchaninov, Lenoid; Lambo, Ricardo; Madsen, Niels; Menary, Scott; Nolan, Paul; Olchanski, Konstantin; Olin, Art; Povilus, Alexander; Pusa, Petteri; Robicheaux, Francis; Sarid, Eli; Nasr, Sarah Seif El; Silveira, Daniel M.; So, Chukman; Storey, James W.; Thompson, Robert I.; van der Werf, Dirk P.; Wilding, Dean; Wurtele, Jonathan S.; Yamazaki, Yasunori

    2011-01-01

    We present the results of an experiment to search for trapped antihydrogen atoms with the ALPHA antihydrogen trap at the CERN Antiproton Decelerator. Sensitive diagnostics of the temperatures, sizes, and densities of the trapped antiproton and positron plasmas have been developed, which in turn permitted development of techniques to precisely and reproducibly control the initial experimental parameters. The use of a position-sensitive annihilation vertex detector, together with the capability of controllably quenching the superconducting magnetic minimum trap, enabled us to carry out a high-sensitivity and low-background search for trapped synthesised antihydrogen atoms. We aim to identify the annihilations of antihydrogen atoms held for at least 130 ms in the trap before being released over ~30 ms. After a three-week experimental run in 2009 involving mixing of 10^7 antiprotons with 1.3 10^9 positrons to produce 6 10^5 antihydrogen atoms, we have identified six antiproton annihilation events that are consist...

  5. Evaluation of double-decker traps for emerald ash borer (Coleoptera: Buprestidae).

    Science.gov (United States)

    Poland, Therese M; McCullough, Deborah G; Anulewicz, Andrea C

    2011-04-01

    Improved detection tools are needed for the emerald ash borer, Agrilus planipennis Fairmaire (Coleoptera: Buprestidae), an invasive forest insect from Asia that has killed millions of ash (Fraxinus spp.) trees in North America since its discovery in Michigan in 2002. We evaluated attraction of adult A. planipennis to artificial traps incorporating visual (e.g., height, color, silhouette) and olfactory cues (e.g., host volatiles) at field sites in Michigan. We developed a double-decker trap consisting of a 3-m-tall polyvinyl pipe with two purple prisms attached near the top. In 2006, we compared A. planipennis attraction to double-decker traps baited with various combinations of manuka oil (containing sesquiterpenes present in ash bark), a blend of four ash leaf volatiles (leaf blend), and a rough texture to simulate bark. Significantly more A. planipennis were captured per trap when traps without the rough texture were baited with the leaf blend and manuka oil lures than on traps with texture and manuka oil but no leaf blend. In 2007, we also tested single prism traps set 1.5 m above ground and tower traps, similar to double-decker traps but 6 m tall. Double-decker traps baited with the leaf blend and manuka oil, with or without the addition of ash leaf and bark extracts, captured significantly more A. planipennis than similarly baited single prism traps, tower traps, or unbaited double-decker traps. A baited double-decker trap captured A. planipennis at a field site that was not previously known to be infested, representing the first detection event using artificial traps and lures. In 2008, we compared purple or green double-decker traps, single prisms suspended 3-5 m above ground in the ash canopy (canopy traps), and large flat purple traps (billboard traps). Significantly more A. planipennis were captured in purple versus green traps, baited traps versus unbaited traps, and double-decker versus canopy traps, whereas billboard traps were intermediate. At sites

  6. Performance and regeneration of a pellet-packed-bed diesel-particulate trap; Ryutai jutenso diesel biryushi trap no seino oyobi saisei

    Energy Technology Data Exchange (ETDEWEB)

    Shioji, M; Nakai, S; Ikegami, M [Kyoto University, Kyoto (Japan); Hori, Y [Yamaha Motor Co. Ltd., Shizuoka (Japan)

    1997-10-01

    This paper demonstrates with the feasibility of a pellet-packed bed for trapping diesel particulates. After making pellets loose from the packed condition, regeneration is established by a circulation of pellets in the trap and collected particulates are efficiently dropped out through the wire mesh on the bottom of the trap. An experimental trap with the pellet-circulation system using a spiral feeder is tested on a single-cylinder test engine to show the trap and regeneration efficiencies. In addition, the condition of pellet circulation is observed using the transparent cylinder, based on which the design of pellet and trap sizes are discussed. 6 refs., 10 figs.

  7. A Rotating-Bears Optical Dipole Trap for Cold Aatoms

    International Nuclear Information System (INIS)

    Friedman, N.; Ozeri, R.; Khaykovich, L.; Davidson, N.

    1999-01-01

    In the last few years, several optical dipole traps for cold atoms were demonstrated and used to study cold atomic collisions, long atomic coherence times and quantum collective effects. Blue-detuned dipole traps, where repulsive light forces confines atoms mostly in dark, offer long storage, and photon-scattering times, combined with strong confinement forces. Unfortunately, such blue-detuned dipole traps involve complicated light intensity distributions that require either multiple laser beams or complicated phase elements. Here, we propose and demonstrate a novel configuration for a single-beam blue-detuned dipole trap, which enables larger trapping volume, and fast temporal changes in the trap size and shape. Our trap consists of a tightly-focused laser beam which is rapidly rotated (with rotation frequency up to 400 khz) with two orthogonal acousto optical scanners. For very high rotation frequencies the atoms feel a time-averaged static dipole potential. Therefore, when the radius of rotation is larger than the beam size, a dark volume which is completely surrounded by light is obtained around the focal region. By changing the rotation radius and the trapping laser intensity and detuning, the trap dimensions and oscillation frequency could be changed over a large parameter range. In particular trap diameters were changed between 50 to 220 microns and trap length was changed between 3.5 to 16 mm. ∼10 6 atoms were loaded into the rotating-beam dipole trap from a magneto optical trap. The density of the trapped atoms was 4x10 10 atoms/cm 3 ,their temperature was -6 pK. and the trap (1/e) lifetime was 0.65 sec, limited by collisions with background atoms. When the rotation frequency was decreased below the oscillation frequency of the atoms in the trap, the trap became unstable, and a sharp reduction of the trap lifetime was observed, in agreement with our theoretical analysis. Finally, we demonstrated adiabatic compression of atoms in the trap by decreasing

  8. Systems and Methods for Ejection of Ions from an Ion Trap

    Science.gov (United States)

    Cooks, Robert Graham (Inventor); Snyder, Dalton (Inventor)

    2018-01-01

    The invention generally relates to systems and methods for ejection of ions from an ion trap. In certain embodiments, systems and methods of the invention sum two different frequency signals into a single summed signal that is applied to an ion trap. In other embodiments, an amplitude of a single frequency signal is modulated as the single frequency signal is being applied to the ion trap. In other embodiments, a first alternating current (AC) signal is applied to an ion trap that varies as a function of time, while a constant radio frequency (RF) signal is applied to the ion trap.

  9. Metastable self-trapping of positrons in MgO

    Science.gov (United States)

    Monge, M. A.; Pareja, R.; González, R.; Chen, Y.

    1997-01-01

    Low-temperature positron annihilation measurements have been performed on MgO single crystals containing either cation or anion vacancies. The temperature dependence of the S parameter is explained in terms of metastable self-trapped positrons which thermally hop through the crystal lattice. The experimental results are analyzed using a three-state trapping model assuming transitions from both delocalized and self-trapped states to deep trapped states at vacancies. The energy level of the self-trapped state was determined to be (62+/-5) meV above the delocalized state. The activation enthalpy for the hopping process of self-trapped positrons appears to depend on the kind of defect present in the crystals.

  10. Physics with Trapped Antihydrogen

    Science.gov (United States)

    Charlton, Michael

    2017-04-01

    For more than a decade antihydrogen atoms have been formed by mixing antiprotons and positrons held in arrangements of charged particle (Penning) traps. More recently, magnetic minimum neutral atom traps have been superimposed upon the anti-atom production region, promoting the trapping of a small quantity of the antihydrogen yield. We will review these advances, and describe some of the first physics experiments performed on anrtihydrogen including the observation of the two-photon 1S-2S transition, invesigation of the charge neutrailty of the anti-atom and studies of the ground state hyperfine splitting. We will discuss the physics motivations for undertaking these experiments and describe some near-future initiatives.

  11. Theoretical study of charge trapping levels in silicon nitride using the LDA-1/2 self-energy correction scheme for excited states

    International Nuclear Information System (INIS)

    Patrocinio, Weslley S.; Ribeiro, Mauro; Fonseca, Leonardo R.C.

    2012-01-01

    Silicon nitride, with a permittivity mid-way between SiO 2 and common high-k materials such as HfO 2 , is widely used in microelectronics as an insulating layer on top of oxides where it serves as an impurity barrier with the positive side effect of increasing the dielectric constant of the insulator when it is SiO 2 . It is also employed as charge storage in nonvolatile memory devices thanks to its high concentration of charge traps. However, in the case of memories, it is still unclear which defects are responsible for charge trapping and what is the impact of defect concentration on the structural and electronic properties of SiN x . Indeed, for the amorphous phase the band gap was measured in the range 5.1–5.5 eV, with long tails in the density of states penetrating the gap region. It is still not clear which defects are responsible for the tails. On the other hand, the K-center defects have been associated with charge trapping, though its origin is assigned to one Si back bond. To investigate the contribution of defect states to the band edge tails and band gap states, we adopted the β phase of stoichiometric silicon nitride (β-Si 3 N 4 ) as our model material and calculated its electronic properties employing ab initio DFT/LDA simulations with self-energy correction to improve the location of defect states in the SiN x band gap through the correction of the band gap underestimation typical of DFT/LDA. We considered some important defects in SiN x , as the Si anti-site and the N vacancy with H saturation, in two defect concentrations. The location of our calculated defect levels in the band gap correlates well with the available experimental data, offering a structural explanation to the measured band edge tails and charge trapping characteristics.

  12. Ion trap device

    Science.gov (United States)

    Ibrahim, Yehia M.; Smith, Richard D.

    2016-01-26

    An ion trap device is disclosed. The device includes a series of electrodes that define an ion flow path. A radio frequency (RF) field is applied to the series of electrodes such that each electrode is phase shifted approximately 180 degrees from an adjacent electrode. A DC voltage is superimposed with the RF field to create a DC gradient to drive ions in the direction of the gradient. A second RF field or DC voltage is applied to selectively trap and release the ions from the device. Further, the device may be gridless and utilized at high pressure.

  13. Asymmetric ion trap

    Science.gov (United States)

    Barlow, Stephan E.; Alexander, Michael L.; Follansbee, James C.

    1997-01-01

    An ion trap having two end cap electrodes disposed asymmetrically about a center of a ring electrode. The inner surface of the end cap electrodes are conformed to an asymmetric pair of equipotential lines of the harmonic formed by the application of voltages to the electrodes. The asymmetry of the end cap electrodes allows ejection of charged species through the closer of the two electrodes which in turn allows for simultaneously detecting anions and cations expelled from the ion trap through the use of two detectors charged with opposite polarity.

  14. Spectroscopy of a Synthetic Trapped Ion Qubit

    Science.gov (United States)

    Hucul, David; Christensen, Justin E.; Hudson, Eric R.; Campbell, Wesley C.

    2017-09-01

    133Ba+ has been identified as an attractive ion for quantum information processing due to the unique combination of its spin-1 /2 nucleus and visible wavelength electronic transitions. Using a microgram source of radioactive material, we trap and laser cool the synthetic A =133 radioisotope of barium II in a radio-frequency ion trap. Using the same, single trapped atom, we measure the isotope shifts and hyperfine structure of the 62P1 /2↔62S1 /2 and 62P1 /2↔52D3 /2 electronic transitions that are needed for laser cooling, state preparation, and state detection of the clock-state hyperfine and optical qubits. We also report the 62P1 /2↔52D3 /2 electronic transition isotope shift for the rare A =130 and 132 barium nuclides, completing the spectroscopic characterization necessary for laser cooling all long-lived barium II isotopes.

  15. On-chip particle trapping and manipulation

    Science.gov (United States)

    Leake, Kaelyn Danielle

    model and predict a sorting method which combines fluid flow with a single optical source to automatically sort dielectric particles by size in waveguide networks. These simulations were shown to be accurate when repeated on-chip. Lastly I introduce a particle trapping technique that uses Multimode Interference(MMI) patterns in order to trap multiple particles at once. The location of the traps can be adjusted as can the number of trapping location by changing the input wavelength. By changing the wavelength back and forth between two values this MMI can be used to pass a particle down the channel like a conveyor belt.

  16. Optimising camera traps for monitoring small mammals.

    Directory of Open Access Journals (Sweden)

    Alistair S Glen

    Full Text Available Practical techniques are required to monitor invasive animals, which are often cryptic and occur at low density. Camera traps have potential for this purpose, but may have problems detecting and identifying small species. A further challenge is how to standardise the size of each camera's field of view so capture rates are comparable between different places and times. We investigated the optimal specifications for a low-cost camera trap for small mammals. The factors tested were 1 trigger speed, 2 passive infrared vs. microwave sensor, 3 white vs. infrared flash, and 4 still photographs vs. video. We also tested a new approach to standardise each camera's field of view. We compared the success rates of four camera trap designs in detecting and taking recognisable photographs of captive stoats (Mustelaerminea, feral cats (Felis catus and hedgehogs (Erinaceuseuropaeus. Trigger speeds of 0.2-2.1 s captured photographs of all three target species unless the animal was running at high speed. The camera with a microwave sensor was prone to false triggers, and often failed to trigger when an animal moved in front of it. A white flash produced photographs that were more readily identified to species than those obtained under infrared light. However, a white flash may be more likely to frighten target animals, potentially affecting detection probabilities. Video footage achieved similar success rates to still cameras but required more processing time and computer memory. Placing two camera traps side by side achieved a higher success rate than using a single camera. Camera traps show considerable promise for monitoring invasive mammal control operations. Further research should address how best to standardise the size of each camera's field of view, maximise the probability that an animal encountering a camera trap will be detected, and eliminate visible or audible cues emitted by camera traps.

  17. The Initial Rise Method in the case of multiple trapping levels

    International Nuclear Information System (INIS)

    Furetta, C.; Guzman, S.; Cruz Z, E.

    2009-10-01

    The aim of the paper is to extent the well known Initial Rise Method (IR) to the case of multiple trapping levels. The IR method is applied to the minerals extracted from Nopal herb and Oregano spice because the thermoluminescent glow curves shape suggests a trap distribution instead of a single trapping level. (Author)

  18. The Initial Rise Method in the case of multiple trapping levels

    Energy Technology Data Exchange (ETDEWEB)

    Furetta, C. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, IPN, Av. Legaria 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Guzman, S.; Cruz Z, E. [Instituto de Ciencias Nucleares, UNAM, A. P. 70-543, 04510 Mexico D. F. (Mexico)

    2009-10-15

    The aim of the paper is to extent the well known Initial Rise Method (IR) to the case of multiple trapping levels. The IR method is applied to the minerals extracted from Nopal herb and Oregano spice because the thermoluminescent glow curves shape suggests a trap distribution instead of a single trapping level. (Author)

  19. WATER-TRAPPED WORLDS

    International Nuclear Information System (INIS)

    Menou, Kristen

    2013-01-01

    Although tidally locked habitable planets orbiting nearby M-dwarf stars are among the best astronomical targets to search for extrasolar life, they may also be deficient in volatiles and water. Climate models for this class of planets show atmospheric transport of water from the dayside to the nightside, where it is precipitated as snow and trapped as ice. Since ice only slowly flows back to the dayside upon accumulation, the resulting hydrological cycle can trap a large amount of water in the form of nightside ice. Using ice sheet dynamical and thermodynamical constraints, I illustrate how planets with less than about a quarter the Earth's oceans could trap most of their surface water on the nightside. This would leave their dayside, where habitable conditions are met, potentially dry. The amount and distribution of residual liquid water on the dayside depend on a variety of geophysical factors, including the efficiency of rock weathering at regulating atmospheric CO 2 as dayside ocean basins dry up. Water-trapped worlds with dry daysides may offer similar advantages as land planets for habitability, by contrast with worlds where more abundant water freely flows around the globe

  20. Redesigning octopus traps

    Directory of Open Access Journals (Sweden)

    Eduarda Gomes

    2014-06-01

    In order to minimise the identified problems in the actual traps, the present work proposes a new design with the aim of reducing the volume and weight during transport, and also during onshore storage. Alternative materials to avoid corrosion and formation of encrustations were also proposed.

  1. WATER-TRAPPED WORLDS

    Energy Technology Data Exchange (ETDEWEB)

    Menou, Kristen [Department of Astronomy, Columbia University, 550 West 120th Street, New York, NY 10027 (United States)

    2013-09-01

    Although tidally locked habitable planets orbiting nearby M-dwarf stars are among the best astronomical targets to search for extrasolar life, they may also be deficient in volatiles and water. Climate models for this class of planets show atmospheric transport of water from the dayside to the nightside, where it is precipitated as snow and trapped as ice. Since ice only slowly flows back to the dayside upon accumulation, the resulting hydrological cycle can trap a large amount of water in the form of nightside ice. Using ice sheet dynamical and thermodynamical constraints, I illustrate how planets with less than about a quarter the Earth's oceans could trap most of their surface water on the nightside. This would leave their dayside, where habitable conditions are met, potentially dry. The amount and distribution of residual liquid water on the dayside depend on a variety of geophysical factors, including the efficiency of rock weathering at regulating atmospheric CO{sub 2} as dayside ocean basins dry up. Water-trapped worlds with dry daysides may offer similar advantages as land planets for habitability, by contrast with worlds where more abundant water freely flows around the globe.

  2. Tightly confined atoms in optical dipole traps

    International Nuclear Information System (INIS)

    Schulz, M.

    2002-12-01

    This thesis reports on the design and setup of a new atom trap apparatus, which is developed to confine few rubidium atoms in ultrahigh vacuum and make them available for controlled manipulations. To maintain low background pressure, atoms of a vapour cell are transferred into a cold atomic beam by laser cooling techniques, and accumulated by a magneto-optic trap (MOT) in a separate part of the vacuum system. The laser cooled atoms are then transferred into dipole traps made of focused far-off-resonant laser fields in single- or crossed-beam geometry, which are superimposed with the center of the MOT. Gaussian as well as hollow Laguerre-Gaussian (LG$ ( 01)$) beam profiles are used with red-detuned or blue-detuned light, respectively. Microfabricated dielectric phase objects allow efficient and robust mode conversion of Gaussian into Laguerre-Gaussian laser beams. Trap geometries can easily be changed due to the highly flexible experimental setup. The dipole trap laser beams are focused to below 10 microns at a power of several hundred milliwatts. Typical trap parameters, at a detuning of several ten nanometers from the atomic resonance, are trag depths of few millikelvin, trap frequencies near 30-kHz, trap light scattering rates of few hundred photons per atom and second, and lifetimes of several seconds. The number of dipole-trapped atoms ranges from more than ten thousand to below ten. The dipole-trapped atoms are detected either by a photon counting system with very efficient straylight discrimination, or by recapture into the MOT, which is imaged onto a sensitive photodiode and a CCD-camera. Due to the strong AC-Stark shift imposed by the high intensity trapping light, energy-selective resonant excitation and detection of the atoms is possible. The measured energy distribution is consistent with a harmonic potential shape and allows the determination of temperatures and heating rates. In first measurements, the thermal energy is found to be about 10 % of the

  3. [Trapping techniques for Solenopsis invicta].

    Science.gov (United States)

    Liang, Xiao-song; Zhang, Qiang; Zhuang, Yiong-lin; Li, Gui-wen; Ji, Lin-peng; Wang, Jian-guo; Dai, Hua-guo

    2007-06-01

    A field study was made to investigate the trapping effects of different attractants, traps, and wind directions on Solenopsis invicta. The results showed that among the test attractants, TB1 (50 g fishmeal, 40 g peptone, 10 ml 10% sucrose water solution and 20 ml soybean oil) had the best effect, followed by TB2 (ham), TB6 (100 g cornmeal and 20 ml soybean oil) and TB4 (10 ml 10% sucrose water solution, 100 g sugarcane powder and 20 ml soybean oil), with a mean capture efficiency being 77.6, 58.7, 29 and 7.7 individuals per trap, respectively. No S. invicta was trapped with TB3 (10 ml 10% sucrose water solution, 100 g cornmeal and 20 ml soybean oil) and TB5 (honey). Tube trap was superior to dish trap, with a trapping efficiency of 75.2 and 35 individuals per trap, respectively. The attractants had better effects in leeward than in windward.

  4. Optical trapping of gold aerosols

    DEFF Research Database (Denmark)

    Schmitt, Regina K.; Pedersen, Liselotte Jauffred; Taheri, S. M.

    2015-01-01

    Aerosol trapping has proven challenging and was only recently demonstrated.1 This was accomplished by utilizing an air chamber designed to have a minimum of turbulence and a laser beam with a minimum of aberration. Individual gold nano-particles with diameters between 80 nm and 200 nm were trapped...... in air using a 1064 nm laser. The positions visited by the trapped gold nano-particle were quantified using a quadrant photo diode placed in the back focal plane. The time traces were analyzed and the trapping stiffness characterizing gold aerosol trapping determined and compared to aerosol trapping...... of nanometer sized silica and polystyrene particles. Based on our analysis, we concluded that gold nano-particles trap more strongly in air than similarly sized polystyrene and silica particles. We found that, in a certain power range, the trapping strength of polystyrene particles is linearly decreasing...

  5. Escaping the tolerance trap

    International Nuclear Information System (INIS)

    Hammoudeh, S.; Madan, V.

    1994-01-01

    In order to examine the implications of the weakening of OPEC's responsiveness in adjusting its production levels, this paper explicitly incorporates rigidity in the quantity adjustment mechanism, thereby extending previous research which assumed smooth quantity adjustments. The rigidity is manifested in a tolerance range for the discrepancy between the declared target price and that of the market. This environment gives rise to a 'tolerance trap' which impedes the convergence process and inevitably brings the market to a standstill before its reaches the targeted price and revenue objectives. OPEC's reaction to the standstill has important implications for the achievement of the target-based equilibrium and for the potential collapse of the market price. This paper examines OPEC's policy options in the tolerance trap and reveals that the optional policy in order to break this impasse and move closer to the equilibrium point is gradually to reduce output and not to flood the market. (Author)

  6. Sediment Trapping in Estuaries

    Science.gov (United States)

    Burchard, Hans; Schuttelaars, Henk M.; Ralston, David K.

    2018-01-01

    Estuarine turbidity maxima (ETMs) are generated by a large suite of hydrodynamic and sediment dynamic processes, leading to longitudinal convergence of cross-sectionally integrated and tidally averaged transport of cohesive and noncohesive suspended particulate matter (SPM). The relative importance of these processes for SPM trapping varies substantially among estuaries depending on topography, fluvial and tidal forcing, and SPM composition. The high-frequency dynamics of ETMs are constrained by interactions with the low-frequency dynamics of the bottom pool of easily erodible sediments. Here, we use a transport decomposition to present processes that lead to convergent SPM transport, and review trapping mechanisms that lead to ETMs at the landward limit of the salt intrusion, in the freshwater zone, at topographic transitions, and by lateral processes within the cross section. We use model simulations of example estuaries to demonstrate the complex concurrence of ETM formation mechanisms. We also discuss how changes in SPM trapping mechanisms, often caused by direct human interference, can lead to the generation of hyperturbid estuaries.

  7. Screening the Hanford tanks for trapped gas

    International Nuclear Information System (INIS)

    Whitney, P.

    1995-10-01

    The Hanford Site is home to 177 large, underground nuclear waste storage tanks. Hydrogen gas is generated within the waste in these tanks. This document presents the results of a screening of Hanford's nuclear waste storage tanks for the presence of gas trapped in the waste. The method used for the screening is to look for an inverse correlation between waste level measurements and ambient atmospheric pressure. If the waste level in a tank decreases with an increase in ambient atmospheric pressure, then the compressibility may be attributed to gas trapped within the waste. In this report, this methodology is not used to estimate the volume of gas trapped in the waste. The waste level measurements used in this study were made primarily to monitor the tanks for leaks and intrusions. Four measurement devices are widely used in these tanks. Three of these measure the level of the waste surface. The remaining device measures from within a well embedded in the waste, thereby monitoring the liquid level even if the liquid level is below a dry waste crust. In the past, a steady rise in waste level has been taken as an indicator of trapped gas. This indicator is not part of the screening calculation described in this report; however, a possible explanation for the rise is given by the mathematical relation between atmospheric pressure and waste level used to support the screening calculation. The screening was applied to data from each measurement device in each tank. If any of these data for a single tank indicated trapped gas, that tank was flagged by this screening process. A total of 58 of the 177 Hanford tanks were flagged as containing trapped gas, including 21 of the 25 tanks currently on the flammable gas watch list

  8. Can camera traps monitor Komodo dragons a large ectothermic predator?

    Directory of Open Access Journals (Sweden)

    Achmad Ariefiandy

    Full Text Available Camera trapping has greatly enhanced population monitoring of often cryptic and low abundance apex carnivores. Effectiveness of passive infrared camera trapping, and ultimately population monitoring, relies on temperature mediated differences between the animal and its ambient environment to ensure good camera detection. In ectothermic predators such as large varanid lizards, this criterion is presumed less certain. Here we evaluated the effectiveness of camera trapping to potentially monitor the population status of the Komodo dragon (Varanus komodoensis, an apex predator, using site occupancy approaches. We compared site-specific estimates of site occupancy and detection derived using camera traps and cage traps at 181 trapping locations established across six sites on four islands within Komodo National Park, Eastern Indonesia. Detection and site occupancy at each site were estimated using eight competing models that considered site-specific variation in occupancy (ψand varied detection probabilities (p according to detection method, site and survey number using a single season site occupancy modelling approach. The most parsimonious model [ψ (site, p (site survey; ω = 0.74] suggested that site occupancy estimates differed among sites. Detection probability varied as an interaction between site and survey number. Our results indicate that overall camera traps produced similar estimates of detection and site occupancy to cage traps, irrespective of being paired, or unpaired, with cage traps. Whilst one site showed some evidence detection was affected by trapping method detection was too low to produce an accurate occupancy estimate. Overall, as camera trapping is logistically more feasible it may provide, with further validation, an alternative method for evaluating long-term site occupancy patterns in Komodo dragons, and potentially other large reptiles, aiding conservation of this species.

  9. Can camera traps monitor Komodo dragons a large ectothermic predator?

    Science.gov (United States)

    Ariefiandy, Achmad; Purwandana, Deni; Seno, Aganto; Ciofi, Claudio; Jessop, Tim S

    2013-01-01

    Camera trapping has greatly enhanced population monitoring of often cryptic and low abundance apex carnivores. Effectiveness of passive infrared camera trapping, and ultimately population monitoring, relies on temperature mediated differences between the animal and its ambient environment to ensure good camera detection. In ectothermic predators such as large varanid lizards, this criterion is presumed less certain. Here we evaluated the effectiveness of camera trapping to potentially monitor the population status of the Komodo dragon (Varanus komodoensis), an apex predator, using site occupancy approaches. We compared site-specific estimates of site occupancy and detection derived using camera traps and cage traps at 181 trapping locations established across six sites on four islands within Komodo National Park, Eastern Indonesia. Detection and site occupancy at each site were estimated using eight competing models that considered site-specific variation in occupancy (ψ)and varied detection probabilities (p) according to detection method, site and survey number using a single season site occupancy modelling approach. The most parsimonious model [ψ (site), p (site survey); ω = 0.74] suggested that site occupancy estimates differed among sites. Detection probability varied as an interaction between site and survey number. Our results indicate that overall camera traps produced similar estimates of detection and site occupancy to cage traps, irrespective of being paired, or unpaired, with cage traps. Whilst one site showed some evidence detection was affected by trapping method detection was too low to produce an accurate occupancy estimate. Overall, as camera trapping is logistically more feasible it may provide, with further validation, an alternative method for evaluating long-term site occupancy patterns in Komodo dragons, and potentially other large reptiles, aiding conservation of this species.

  10. Can Camera Traps Monitor Komodo Dragons a Large Ectothermic Predator?

    Science.gov (United States)

    Ariefiandy, Achmad; Purwandana, Deni; Seno, Aganto; Ciofi, Claudio; Jessop, Tim S.

    2013-01-01

    Camera trapping has greatly enhanced population monitoring of often cryptic and low abundance apex carnivores. Effectiveness of passive infrared camera trapping, and ultimately population monitoring, relies on temperature mediated differences between the animal and its ambient environment to ensure good camera detection. In ectothermic predators such as large varanid lizards, this criterion is presumed less certain. Here we evaluated the effectiveness of camera trapping to potentially monitor the population status of the Komodo dragon (Varanus komodoensis), an apex predator, using site occupancy approaches. We compared site-specific estimates of site occupancy and detection derived using camera traps and cage traps at 181 trapping locations established across six sites on four islands within Komodo National Park, Eastern Indonesia. Detection and site occupancy at each site were estimated using eight competing models that considered site-specific variation in occupancy (ψ)and varied detection probabilities (p) according to detection method, site and survey number using a single season site occupancy modelling approach. The most parsimonious model [ψ (site), p (site*survey); ω = 0.74] suggested that site occupancy estimates differed among sites. Detection probability varied as an interaction between site and survey number. Our results indicate that overall camera traps produced similar estimates of detection and site occupancy to cage traps, irrespective of being paired, or unpaired, with cage traps. Whilst one site showed some evidence detection was affected by trapping method detection was too low to produce an accurate occupancy estimate. Overall, as camera trapping is logistically more feasible it may provide, with further validation, an alternative method for evaluating long-term site occupancy patterns in Komodo dragons, and potentially other large reptiles, aiding conservation of this species. PMID:23527027

  11. Stable Trapping of Multielectron Helium Bubbles in a Paul Trap

    Science.gov (United States)

    Joseph, E. M.; Vadakkumbatt, V.; Pal, A.; Ghosh, A.

    2017-06-01

    In a recent experiment, we have used a linear Paul trap to store and study multielectron bubbles (MEBs) in liquid helium. MEBs have a charge-to-mass ratio (between 10^{-4} and 10^{-2} C/kg) which is several orders of magnitude smaller than ions (between 10^6 and 10^8 C/kg) studied in traditional ion traps. In addition, MEBs experience significant drag force while moving through the liquid. As a result, the experimental parameters for stable trapping of MEBs, such as magnitude and frequency of the applied electric fields, are very different from those used in typical ion trap experiments. The purpose of this paper is to model the motion of MEBs inside a linear Paul trap in liquid helium, determine the range of working parameters of the trap, and compare the results with experiments.

  12. Particle trapping induced by the interplay between coherence and decoherence

    International Nuclear Information System (INIS)

    Yi Sangyong; Choi, Mahn-Soo; Kim, Sang Wook

    2009-01-01

    We propose a novel scheme to trap a particle based on a delicate interplay between coherence and decoherence. If the decoherence occurs as a particle is located in the scattering region and subsequently the appropriate destructive interference takes place, the particle can be trapped in the scattering area. We consider two possible experimental realizations of such trapping: a ring attached to a single lead and a ring attached to two leads. Our scheme has nothing to do with a quasi-bound state of the system, but has a close analogy with the weak localization phenomena in disordered conductors.

  13. Scheme for teleportation of unknown states of trapped ion

    Institute of Scientific and Technical Information of China (English)

    Chen Mei-Feng; Ma Song-She

    2008-01-01

    A scheme is presented for teleporting an unknown state in a trapped ion system.The scheme only requires a single laser beam.It allows the trap to be in any state with a few phonons,e.g.a thermal motion.Furthermore,it works in the regime,where the Rabi frequency of the laser is on the order of the trap frequency.Thus,the teleportation speed is greatly increased,which is important for decreasing the decoherence effect.This idea can also be used to teleport an unknown ionic entangled state.

  14. Atom trap trace analysis

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Z.-T.; Bailey, K.; Chen, C.-Y.; Du, X.; Li, Y.-M.; O' Connor, T. P.; Young, L.

    2000-05-25

    A new method of ultrasensitive trace-isotope analysis has been developed based upon the technique of laser manipulation of neutral atoms. It has been used to count individual {sup 85}Kr and {sup 81}Kr atoms present in a natural krypton sample with isotopic abundances in the range of 10{sup {minus}11} and 10{sup {minus}13}, respectively. The atom counts are free of contamination from other isotopes, elements,or molecules. The method is applicable to other trace-isotopes that can be efficiently captured with a magneto-optical trap, and has a broad range of potential applications.

  15. Atom trap trace analysis

    International Nuclear Information System (INIS)

    Lu, Z.-T.; Bailey, K.; Chen, C.-Y.; Du, X.; Li, Y.-M.; O'Connor, T. P.; Young, L.

    2000-01-01

    A new method of ultrasensitive trace-isotope analysis has been developed based upon the technique of laser manipulation of neutral atoms. It has been used to count individual 85 Kr and 81 Kr atoms present in a natural krypton sample with isotopic abundances in the range of 10 -11 and 10 -13 , respectively. The atom counts are free of contamination from other isotopes, elements,or molecules. The method is applicable to other trace-isotopes that can be efficiently captured with a magneto-optical trap, and has a broad range of potential applications

  16. Magnetic traps with a sperical separatrix: Tornado traps

    International Nuclear Information System (INIS)

    Peregood, B.P.; Lehnert, B.

    1979-11-01

    A review is given on the features of magnetic traps with a spherical separatrix, with special emphesis on Tornado spiral coil configurations. The confinement and heating of static plasmas in Tornado traps is treated, including the topology of the magnetic field structure, the magneto-mechanical properties of the magnetic coil system, as well as the particle orbits and plasma behaviour in these traps. In additio, the mode of rotating plasma operation by crossed electric and magnetic fields is being described. The results of experiments on static and rotating plasmas are summarized, and conclusions are drawn about future possibilities of Tornado traps for the creation and containment of hot plasmas. (author)

  17. Magnetic traps with a spherical separatrix: Tornado traps

    International Nuclear Information System (INIS)

    Peregood, B.P.; Lehnert, B.

    1981-01-01

    A review is given on the features of magnetic traps with a spherical separatrix, with special emphasis on Tornado spiral coil configurations. The confinement and heating of static plasms in Tornado traps is treated, including the topology of the magnetic field structure, the magneto-mechanical properties of the magnetic coil system, as well as the particle orbits and plasma behaviour in these traps. In addition, the mode of rotating plasma operation by crossed electric and magnetic fields is described. The results of experiments on static and rotating plasmas are summarized, and conclusions are drawn about future possibilities of Tornado traps in the creation and containment of hot plasmas. (orig.)

  18. Magnetic Trapping and Coherent Control of Laser-Cooled Molecules

    Science.gov (United States)

    Williams, H. J.; Caldwell, L.; Fitch, N. J.; Truppe, S.; Rodewald, J.; Hinds, E. A.; Sauer, B. E.; Tarbutt, M. R.

    2018-04-01

    We demonstrate coherent microwave control of the rotational, hyperfine, and Zeeman states of ultracold CaF molecules, and the magnetic trapping of these molecules in a single, selectable quantum state. We trap about 5 ×103 molecules for almost 2 s at a temperature of 70 (8 ) μ K and a density of 1.2 ×105 cm-3. We measure the state-specific loss rate due to collisions with background helium.

  19. ATRAP - Progress Towards Trapped Antihydrogen

    International Nuclear Information System (INIS)

    Grzonka, D.; Goldenbaum, F.; Oelert, W.; Sefzick, T.; Zhang, Z.; Comeau, D.; Hessels, E.A.; Storry, C.H.; Gabrielse, G.; Larochelle, P.; Lesage, D.; Levitt, B.; Speck, A.; Haensch, T.W.; Pittner, H.; Walz, J.

    2005-01-01

    The ATRAP experiment at the CERN antiproton decelerator AD aims for a test of the CPT invariance by a high precision comparison of the 1s-2s transition in the hydrogen and the antihydrogen atom.Antihydrogen production is routinely operated at ATRAP and detailed studies have been performed in order to optimize the production efficiency of useful antihydrogen.For high precision measurements of atomic transitions cold antihydrogen in the ground state is required which must be trapped due to the low number of available antihydrogen atoms compared to the cold hydrogen beam used for hydrogen spectroscopy. To ensure a reasonable antihydrogen trapping efficiency a magnetic trap has to be superposed the nested Penning trap. First trapping tests of charged particles within a combined magnetic/Penning trap have started at ATRAP

  20. ATRAP Progress Towards Trapped Antihydrogen

    CERN Document Server

    Grzonka, D; Gabrielse, G; Goldenbaum, F; Hänsch, T W; Hessels, E A; Larochelle, P; Le Sage, D; Levitt, B; Oelert, W; Pittner, H; Sefzick, T; Speck, A; Storry, C H; Walz, J; Zhang, Z

    2005-01-01

    The ATRAP experiment at the CERN antiproton decelerator AD aims for a test of the CPT invariance by a high precision comparison of the 1s‐2s transition in the hydrogen and the antihydrogen atom. Antihydrogen production is routinely operated at ATRAP and detailed studies have been performed in order to optimize the production efficiency of useful antihydrogen. For high precision measurements of atomic transitions cold antihydrogen in the ground state is required which must be trapped due to the low number of available antihydrogen atoms compared to the cold hydrogen beam used for hydrogen spectroscopy. To ensure a reasonable antihydrogen trapping efficiency a magnetic trap has to be superposed the nested Penning trap. First trapping tests of charged particles within a combined magnetic/Penning trap have started at ATRAP.

  1. Calibration of optically trapped nanotools

    Energy Technology Data Exchange (ETDEWEB)

    Carberry, D M; Simpson, S H; Grieve, J A; Hanna, S; Miles, M J [H H Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Wang, Y; Schaefer, H; Steinhart, M [Institute for Chemistry, University of Osnabrueck, Osnabrueck (Germany); Bowman, R; Gibson, G M; Padgett, M J, E-mail: m.j.miles@bristol.ac.uk [SUPA, Department of Physics and Astronomy, University of Glasgow, Science Road, Glasgow G12 8QQ (United Kingdom)

    2010-04-30

    Holographically trapped nanotools can be used in a novel form of force microscopy. By measuring the displacement of the tool in the optical traps, the contact force experienced by the probe can be inferred. In the following paper we experimentally demonstrate the calibration of such a device and show that its behaviour is independent of small changes in the relative position of the optical traps. Furthermore, we explore more general aspects of the thermal motion of the tool.

  2. Optical traps with geometric aberrations

    International Nuclear Information System (INIS)

    Roichman, Yael; Waldron, Alex; Gardel, Emily; Grier, David G.

    2006-01-01

    We assess the influence of geometric aberrations on the in-plane performance of optical traps by studying the dynamics of trapped colloidal spheres in deliberately distorted holographic optical tweezers. The lateral stiffness of the traps turns out to be insensitive to moderate amounts of coma, astigmatism, and spherical aberration. Moreover holographic aberration correction enables us to compensate inherent shortcomings in the optical train, thereby adaptively improving its performance. We also demonstrate the effects of geometric aberrations on the intensity profiles of optical vortices, whose readily measured deformations suggest a method for rapidly estimating and correcting geometric aberrations in holographic trapping systems

  3. A live-trap and trapping technique for fossorial mammals

    African Journals Online (AJOL)

    mammals. G.C. Hickman. An effective live-trap was designed for Cryptomys hottentotus .... that there is an animal in the burrow system, and to lessen the likelihood of the .... the further testing and modification of existing trap types. Not only is it ...

  4. Electron traps in semiconducting polymers : Exponential versus Gaussian trap distribution

    NARCIS (Netherlands)

    Nicolai, H. T.; Mandoc, M. M.; Blom, P. W. M.

    2011-01-01

    The low electron currents in poly(dialkoxy-p-phenylene vinylene) (PPV) derivatives and their steep voltage dependence are generally explained by trap-limited conduction in the presence of an exponential trap distribution. Here we demonstrate that the electron transport of several PPV derivatives can

  5. Electron traps in semiconducting polymers: exponential versus Gaussian trap distribution

    NARCIS (Netherlands)

    Nicolai, H.T.; Mandoc, M.M.; Blom, P.W.M.

    2011-01-01

    The low electron currents in poly(dialkoxy-p-phenylene vinylene) (PPV) derivatives and their steep voltage dependence are generally explained by trap-limited conduction in the presence of an exponential trap distribution. Here we demonstrate that the electron transport of several PPV derivatives can

  6. Scalable quantum search using trapped ions

    International Nuclear Information System (INIS)

    Ivanov, S. S.; Ivanov, P. A.; Linington, I. E.; Vitanov, N. V.

    2010-01-01

    We propose a scalable implementation of Grover's quantum search algorithm in a trapped-ion quantum information processor. The system is initialized in an entangled Dicke state by using adiabatic techniques. The inversion-about-average and oracle operators take the form of single off-resonant laser pulses. This is made possible by utilizing the physical symmetries of the trapped-ion linear crystal. The physical realization of the algorithm represents a dramatic simplification: each logical iteration (oracle and inversion about average) requires only two physical interaction steps, in contrast to the large number of concatenated gates required by previous approaches. This not only facilitates the implementation but also increases the overall fidelity of the algorithm.

  7. Segmented trapped vortex cavity

    Science.gov (United States)

    Grammel, Jr., Leonard Paul (Inventor); Pennekamp, David Lance (Inventor); Winslow, Jr., Ralph Henry (Inventor)

    2010-01-01

    An annular trapped vortex cavity assembly segment comprising includes a cavity forward wall, a cavity aft wall, and a cavity radially outer wall there between defining a cavity segment therein. A cavity opening extends between the forward and aft walls at a radially inner end of the assembly segment. Radially spaced apart pluralities of air injection first and second holes extend through the forward and aft walls respectively. The segment may include first and second expansion joint features at distal first and second ends respectively of the segment. The segment may include a forward subcomponent including the cavity forward wall attached to an aft subcomponent including the cavity aft wall. The forward and aft subcomponents include forward and aft portions of the cavity radially outer wall respectively. A ring of the segments may be circumferentially disposed about an axis to form an annular segmented vortex cavity assembly.

  8. Detection of trapped antihydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Hydomako, Richard [Calgary Univ., AB (Canada). Dept. of Physics and Astronomy

    2013-02-01

    A landmark thesis describing the first ever trapping of antihydrogen atoms in CERN's ALPHA apparatus. Opens the way to crucial tests of fundamental theories. Nominated as an outstanding contribution by the University of Calgary. In 2010, the ALPHA collaboration achieved a first for mankind: the stable, long-term storage of atomic antimatter, a project carried out a the Antiproton Decelerator facility at CERN. A crucial element of this observation was a dedicated silicon vertexing detector used to identify and analyze antihydrogen annihilations. This thesis reports the methods used to reconstruct the annihilation location. Specifically, the methods used to identify and extrapolate charged particle tracks and estimate the originating annihilation location are outlined. Finally, the experimental results demonstrating the first-ever magnetic confinement of antihydrogen atoms are presented. These results rely heavily on the silicon detector, and as such, the role of the annihilation vertex reconstruction is emphasized.

  9. A minimal optical trapping and imaging microscopy system.

    Directory of Open Access Journals (Sweden)

    Carmen Noemí Hernández Candia

    Full Text Available We report the construction and testing of a simple and versatile optical trapping apparatus, suitable for visualizing individual microtubules (∼25 nm in diameter and performing single-molecule studies, using a minimal set of components. This design is based on a conventional, inverted microscope, operating under plain bright field illumination. A single laser beam enables standard optical trapping and the measurement of molecular displacements and forces, whereas digital image processing affords real-time sample visualization with reduced noise and enhanced contrast. We have tested our trapping and imaging instrument by measuring the persistence length of individual double-stranded DNA molecules, and by following the stepping of single kinesin motor proteins along clearly imaged microtubules. The approach presented here provides a straightforward alternative for studies of biomaterials and individual biomolecules.

  10. Towards a wire-mediated coupling of trapped ions

    Science.gov (United States)

    Clark, Robert; Lee, Tony; Daniilidis, Nikos; Sankaranarayanan, S.; Häffner, Hartmut

    2008-03-01

    Most schemes for ion trap quantum computation rely upon the exchange of information between ion-qubits in the same trap region, mediated by their shared vibrational mode. An alternative way to achieve this coupling is via the image charges induced in a conducting wire that connects different traps. This was shown to be theoretically possible by Heinzen and Wineland in 1990, but some important practical questions have remained unaddressed. Among these are how the presence of such a wire modifies the motional frequencies and heating rates of trapped ions. We thus have realized this system as a 1 mm-scale planar segmented rf ion trap combined with an electrically floating gold wire of 25 microns diameter and length 1 cm. This wire is placed close to trapped ions using a set of piezoelectric nanopositioners. We present here experimental measurements of the motional frequencies and heating rates of a single trapped calcium ion as the wire is moved from 3.0 mm to 0.2 mm away from the ion. We discuss the implications of these results for achieving wire-mediated coupling in the present apparatus, as well as in future improved setups.

  11. Flux trapping in superconducting cavities

    International Nuclear Information System (INIS)

    Vallet, C.; Bolore, M.; Bonin, B.; Charrier, J.P.; Daillant, B.; Gratadour, J.; Koechlin, F.; Safa, H.

    1992-01-01

    The flux trapped in various field cooled Nb and Pb samples has been measured. For ambient fields smaller than 3 Gauss, 100% of the flux is trapped. The consequences of this result on the behavior of superconducting RF cavities are discussed. (author) 12 refs.; 2 figs

  12. Injection into electron plasma traps

    International Nuclear Information System (INIS)

    Gorgadze, Vladimir; Pasquini, Thomas A.; Fajans, Joel; Wurtele, Jonathan S.

    2003-01-01

    Computational studies and experimental measurements of plasma injection into a Malmberg-Penning trap reveal that the number of trapped particles can be an order of magnitude higher than predicted by a simple estimates based on a ballistic trapping model. Enhanced trapping is associated with a rich nonlinear dynamics generated by the space-charge forces of the evolving trapped electron density. A particle-in-cell simulation is used to identify the physical mechanisms that lead to the increase in trapped electrons. The simulations initially show strong two-stream interactions between the electrons emitted from the cathode and those reflected off the end plug of the trap. This is followed by virtual cathode oscillations near the injection region. As electrons are trapped, the initially hollow longitudinal phase-space is filled, and the transverse radial density profile evolves so that the plasma potential matches that of the cathode. Simple theoretical arguments are given that describe the different dynamical regimes. Good agreement is found between simulation and theory

  13. The ALPHA antihydrogen trapping apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Amole, C. [Department of Physics and Astronomy, York University, Toronto ON Canada, M3J 1P3 (Canada); Andresen, G.B. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Ashkezari, M.D. [Department of Physics, Simon Fraser University, Burnaby, BC Canada, V5A 1S6 (Canada); Baquero-Ruiz, M. [Department of Physics, University of California at Berkeley, Berkeley, CA 94720-7300 (United States); Bertsche, W. [Department of Physics, College of Science, Swansea University, Swansea SA2 8PP (United Kingdom); School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); The Cockcroft Institute, Warrington WA4 4AD (United Kingdom); Bowe, P.D. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Butler, E. [Physics Department, CERN, CH-1211 Geneva 23 (Switzerland); Capra, A. [Department of Physics and Astronomy, York University, Toronto ON Canada, M3J 1P3 (Canada); Carpenter, P.T. [Department of Physics, Auburn University, Auburn, AL 36849-5311 (United States); Cesar, C.L. [Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro 21941-972 (Brazil); Chapman, S. [Department of Physics, University of California at Berkeley, Berkeley, CA 94720-7300 (United States); Charlton, M.; Deller, A.; Eriksson, S. [Department of Physics, College of Science, Swansea University, Swansea SA2 8PP (United Kingdom); Escallier, J. [Brookhaven National Laboratory, Upton, NY 11973 (United States); Fajans, J. [Department of Physics, University of California at Berkeley, Berkeley, CA 94720-7300 (United States); Friesen, T. [Department of Physics and Astronomy, University of Calgary, Calgary AB, Canada, T2N 1N4 (Canada); Fujiwara, M.C.; Gill, D.R. [TRIUMF, 4004 Wesbrook Mall, Vancouver BC, Canada V6T 2A3 (Canada); Gutierrez, A. [Department of Physics and Astronomy, University of British Columbia, Vancouver BC, Canada V6T 1Z4 (Canada); and others

    2014-01-21

    The ALPHA collaboration, based at CERN, has recently succeeded in confining cold antihydrogen atoms in a magnetic minimum neutral atom trap and has performed the first study of a resonant transition of the anti-atoms. The ALPHA apparatus will be described herein, with emphasis on the structural aspects, diagnostic methods and techniques that have enabled antihydrogen trapping and experimentation to be achieved.

  14. Quantum computing with trapped ions

    Energy Technology Data Exchange (ETDEWEB)

    Hughes, R.J.

    1998-01-01

    The significance of quantum computation for cryptography is discussed. Following a brief survey of the requirements for quantum computational hardware, an overview of the ion trap quantum computation project at Los Alamos is presented. The physical limitations to quantum computation with trapped ions are analyzed and an assessment of the computational potential of the technology is made.

  15. Trapped surfaces in spherical stars

    International Nuclear Information System (INIS)

    Bizon, P.; Malec, E.; O'Murchadha, N.

    1988-01-01

    We give necessary and sufficient conditions for the existence of trapped surfaces in spherically symmetric spacetimes. These conditions show that the formation of trapped surfaces depends on both the degree of concentration and the average flow of the matter. The result can be considered as a partial validation of the cosmic-censorship hypothesis

  16. Spin resonance with trapped ions

    Energy Technology Data Exchange (ETDEWEB)

    Wunderlich, Ch; Balzer, Ch; Hannemann, T; Mintert, F; Neuhauser, W; Reiss, D; Toschek, P E [Institut fuer Laser-Physik, Universitaet Hamburg, Jungiusstrasse 9, 20355 Hamburg (Germany)

    2003-03-14

    A modified ion trap is described where experiments (in particular related to quantum information processing) that usually require optical radiation can be carried out using microwave or radio frequency electromagnetic fields. Instead of applying the usual methods for coherent manipulation of trapped ions, a string of ions in such a modified trap can be treated like a molecule in nuclear magnetic resonance experiments taking advantage of spin-spin coupling. The collection of trapped ions can be viewed as an N-qubit molecule with adjustable spin-spin coupling constants. Given N identically prepared quantum mechanical two-level systems (qubits), the optimal strategy to estimate their quantum state requires collective measurements. Using the ground state hyperfine levels of electrodynamically trapped {sup 171}Yb{sup +}, we have implemented an adaptive algorithm for state estimation involving sequential measurements on arbitrary qubit states.

  17. Spin resonance with trapped ions

    International Nuclear Information System (INIS)

    Wunderlich, Ch; Balzer, Ch; Hannemann, T; Mintert, F; Neuhauser, W; Reiss, D; Toschek, P E

    2003-01-01

    A modified ion trap is described where experiments (in particular related to quantum information processing) that usually require optical radiation can be carried out using microwave or radio frequency electromagnetic fields. Instead of applying the usual methods for coherent manipulation of trapped ions, a string of ions in such a modified trap can be treated like a molecule in nuclear magnetic resonance experiments taking advantage of spin-spin coupling. The collection of trapped ions can be viewed as an N-qubit molecule with adjustable spin-spin coupling constants. Given N identically prepared quantum mechanical two-level systems (qubits), the optimal strategy to estimate their quantum state requires collective measurements. Using the ground state hyperfine levels of electrodynamically trapped 171 Yb + , we have implemented an adaptive algorithm for state estimation involving sequential measurements on arbitrary qubit states

  18. Optical two-beam trap in a polymer microfluidic chip

    DEFF Research Database (Denmark)

    Palanco, Marta Espina; Catak, Darmin; Marie, Rodolphe

    2016-01-01

    An optical two-beam trap, composed from two counter propagating laser beams, is an interesting setup due to the ability of the system to trap, hold, and stretch soft biological objects like vesicles or single cells. Because of this functionality, the system was also named "the optical stretcher...... wish to trap, thereby preventing too many cells to flow below the line of focus of the two counter propagating laser beams that are positioned perpendicular to the direction of flow of the cells. Results will be compared to that from other designs from previous work in the group......." by Jochen Guck, Josep Käs and co-workers some 15 years ago. In a favorable setup, the two opposing laser beams meet with equal intensities in the middle of a fluidic channel in which cells may flow past, be trapped, stretched, and allowed to move on, giving the promise of a high throughput device. Yet...

  19. Cryogenic setup for trapped ion quantum computing.

    Science.gov (United States)

    Brandl, M F; van Mourik, M W; Postler, L; Nolf, A; Lakhmanskiy, K; Paiva, R R; Möller, S; Daniilidis, N; Häffner, H; Kaushal, V; Ruster, T; Warschburger, C; Kaufmann, H; Poschinger, U G; Schmidt-Kaler, F; Schindler, P; Monz, T; Blatt, R

    2016-11-01

    We report on the design of a cryogenic setup for trapped ion quantum computing containing a segmented surface electrode trap. The heat shield of our cryostat is designed to attenuate alternating magnetic field noise, resulting in 120 dB reduction of 50 Hz noise along the magnetic field axis. We combine this efficient magnetic shielding with high optical access required for single ion addressing as well as for efficient state detection by placing two lenses each with numerical aperture 0.23 inside the inner heat shield. The cryostat design incorporates vibration isolation to avoid decoherence of optical qubits due to the motion of the cryostat. We measure vibrations of the cryostat of less than ±20 nm over 2 s. In addition to the cryogenic apparatus, we describe the setup required for an operation with 40 Ca + and 88 Sr + ions. The instability of the laser manipulating the optical qubits in 40 Ca + is characterized by yielding a minimum of its Allan deviation of 2.4 ⋅ 10 -15 at 0.33 s. To evaluate the performance of the apparatus, we trapped 40 Ca + ions, obtaining a heating rate of 2.14(16) phonons/s and a Gaussian decay of the Ramsey contrast with a 1/e-time of 18.2(8) ms.

  20. Trapping tsetse flies on water

    Directory of Open Access Journals (Sweden)

    Laveissière C.

    2011-05-01

    Full Text Available Riverine tsetse flies such as Glossina palpalis gambiensis and G. tachinoides are the vectors of human and animal trypanosomoses in West Africa. Despite intimate links between tsetse and water, to our knowledge there has never been any attempt to design trapping devices that would catch tsetse on water. In mangrove (Guinea one challenging issue is the tide, because height above the ground for a trap is a key factor affecting tsetse catches. The trap was mounted on the remains of an old wooden dugout, and attached with rope to nearby branches, thereby allowing it to rise and fall with the tide. Catches showed a very high density of 93.9 flies/”water-trap”/day, which was significantly higher (p < 0.05 than all the catches from other habitats where the classical trap had been used. In savannah, on the Comoe river of South Burkina Faso, the biconical trap was mounted on a small wooden raft anchored to a stone, and catches were compared with the classical biconical trap put on the shores. G. p. gambiensis and G. tachinoides densities were not significantly different from those from the classical biconical one. The adaptations described here have allowed to efficiently catch tsetse on the water, which to our knowledge is reported here for the first time. This represents a great progress and opens new opportunities to undertake studies on the vectors of trypanosomoses in mangrove areas of Guinea, which are currently the areas showing the highest prevalences of sleeping sickness in West Africa. It also has huge potential for tsetse control using insecticide impregnated traps in savannah areas where traps become less efficient in rainy season. The Guinean National control programme has already expressed its willingness to use such modified traps in its control campaigns in Guinea, as has the national PATTEC programme in Burkina Faso during rainy season.

  1. Status of THe-Trap

    Energy Technology Data Exchange (ETDEWEB)

    Streubel, Sebastian; Eronen, Tommi; Hoecker, Martin; Ketter, Jochen; Blaum, Klaus [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Van Dyck, Robert S. Jr. [Department of Physics, University of Washington, Seattle, WA (United States)

    2013-07-01

    THe-Trap (short for Tritium-{sup 3}He Trap) is a Penning-trap setup dedicated to measure the {sup 3}H to {sup 3}He mass-ratio with a relative uncertainty of better than 10{sup -11}. The ratio is of relevance for the KArlsruhe TRItium Neutrino experiment (KATRIN), which aims to measure the electron anti-neutrino mass, by measuring the shape of the β-decay energy spectrum close to its endpoint. An independent measurement of the {sup 3}H to {sup 3}He mass-ratio pins down this endpoint, and thus will help to determine the systematics of KATRIN. The trap setup consists of two Penning-traps: One trap for precision measurements, the other trap for ion storage. Ideally, the trap content will be periodically switched, which reduces the time between the measurements of the two ions' motional frequencies. In 2012, a mass ratio measurement of {sup 12}C{sup 4+} to {sup 14}N{sup 5+} was performed to characterize systematic effects of the traps. This measurement yielded a accuracy of 10{sup -9}. Further investigations revealed that a major reason for the modest accuracy is the large axial amplitude of ∼100 μm, compared to a ideal case of 3 μm at 4 K. In addition, relative magnetic fluctuations at a 3 x 10{sup -10} level on a 10 h timescale need to be significantly improved. In this contribution, the aforementioned findings and further systematic studies will be presented.

  2. Amphipol trapping of a functional CYP system

    DEFF Research Database (Denmark)

    Laursen, Tomas; Naur, Peter; Møller, Birger Lindberg

    2013-01-01

    backbone randomly grafted with hydrophobic side chains. An optimal ratio of 1:2 w/w of protein to APol (A8-35) was required for trapping the single transmembrane helices of CYP79A1, CYP71E1, and the electron partner cytochrome P450 oxidoreductase (POR). CYP79A1 and POR retained their individual activity......In plants, some enzymes of the cytochrome P450 (CYP) superfamily are thought to organize into transient dynamic metabolons to optimize the biosynthesis of bioactive natural products. Metabolon formation may facilitate efficient turnover of labile and toxic intermediates and prevent undesired...

  3. Applications of laser cooling and trapping

    International Nuclear Information System (INIS)

    Kasevich, M.; Moler, K.; Riis, E.; Sunderman, E.; Weiss, D.; Chu, S.

    1991-01-01

    Recent work done at Stanford in the manipulation of atoms and particles is summarized. Techniques to further increase our control of neutral particles such as atomic fountains, funnels, and trampolines have been demonstrated. These techniques are now being combined with a new type of velocity selection in order to study atom/surface interactions and to improve the limit on the charge neutrality of atoms. Trapping techniques have also allowed us to manipulate single molecules of DNA in aqueous solution while observing the molecules in fluorescence

  4. Optical trapping of nanoparticles with significantly reduced laser powers by using counter-propagating beams (Presentation Recording)

    Science.gov (United States)

    Zhao, Chenglong; LeBrun, Thomas W.

    2015-08-01

    Gold nanoparticles (GNP) have wide applications ranging from nanoscale heating to cancer therapy and biological sensing. Optical trapping of GNPs as small as 18 nm has been successfully achieved with laser power as high as 855 mW, but such high powers can damage trapped particles (particularly biological systems) as well heat the fluid, thereby destabilizing the trap. In this article, we show that counter propagating beams (CPB) can successfully trap GNP with laser powers reduced by a factor of 50 compared to that with a single beam. The trapping position of a GNP inside a counter-propagating trap can be easily modulated by either changing the relative power or position of the two beams. Furthermore, we find that under our conditions while a single-beam most stably traps a single particle, the counter-propagating beam can more easily trap multiple particles. This (CPB) trap is compatible with the feedback control system we recently demonstrated to increase the trapping lifetimes of nanoparticles by more than an order of magnitude. Thus, we believe that the future development of advanced trapping techniques combining counter-propagating traps together with control systems should significantly extend the capabilities of optical manipulation of nanoparticles for prototyping and testing 3D nanodevices and bio-sensing.

  5. A reservoir trap for antiprotons

    CERN Document Server

    Smorra, Christian; Franke, Kurt; Nagahama, Hiroki; Schneider, Georg; Higuchi, Takashi; Van Gorp, Simon; Blaum, Klaus; Matsuda, Yasuyuki; Quint, Wolfgang; Walz, Jochen; Yamazaki, Yasunori; Ulmer, Stefan

    2015-01-01

    We have developed techniques to extract arbitrary fractions of antiprotons from an accumulated reservoir, and to inject them into a Penning-trap system for high-precision measurements. In our trap-system antiproton storage times > 1.08 years are estimated. The device is fail-safe against power-cuts of up to 10 hours. This makes our planned comparisons of the fundamental properties of protons and antiprotons independent from accelerator cycles, and will enable us to perform experiments during long accelerator shutdown periods when background magnetic noise is low. The demonstrated scheme has the potential to be applied in many other precision Penning trap experiments dealing with exotic particles.

  6. Unified theory of ballooning instabilities and temperature gradient driven trapped ion modes

    International Nuclear Information System (INIS)

    Xu, X.Q.

    1990-08-01

    A unified theory of temperature gradient driven trapped ion modes and ballooning instabilities is developed using kinetic theory in banana regimes. All known results, such as electrostatic and purely magnetic trapped particle modes and ideal MHD ballooning modes (or shear Alfven waves) are readily derived from our single general dispersion relation. Several new results from ion-ion collision and trapped particle modification of ballooning modes are derived and discussed and the interrelationship between those modes is established. 24 refs

  7. Urban fall traps

    Directory of Open Access Journals (Sweden)

    Vera Lucia de Almeida Valsecchi

    2007-06-01

    Full Text Available Objectives: To evaluate the repercussion of falls in the elderly peoplewho live in the city of São Paulo and address - though synthetically- some questions regarding the city and its relation to aging and thequality of life of the elderly. Methods: This is a qualitative study. As fordata collection, “in-depth individual interviews” were applied. Selectionof subjects was guided by a procedure named as “network”. Results:Ten interviews were performed, nine with elderly individuals who werevictims of falls and one with a public authority representative. Dataresulting from interviews confirmed that significant changes occurin live of the elderly, who are victims of what has been called “urbantraps”, and that, by extrapolating mobility and dependence contexts,invade feelings, emotions and desires. The inappropriate environmentprovided by the city of São Paulo is confirmed by absence of adequateurban planning and lack of commitment of public authorities. It alsorevealed that the particular way of being old and living an elderlylife, in addition to right to citizenship, is reflected by major or lesserdifficulties imposed to the elderly to fight for their rights and have theirpublic space respected. Conclusion: The city of São Paulo is not anideal locus for an older person to live in. To the traps that are found inpublic places one can add those that are found in private places andthat contribute to the hard experience of falls among the elderly, anexperience that is sometimes fatal. In Brazil, the attention is basicallyfocused on the consequences of falls and not on prevention, by meansof urban planning that should meet the needs of the most vulnerablegroups - the physically disabled and the elderly.

  8. Innovation: the classic traps.

    Science.gov (United States)

    Kanter, Rosabeth Moss

    2006-11-01

    these traps.

  9. Integrated System Technologies for Modular Trapped Ion Quantum Information Processing

    Science.gov (United States)

    Crain, Stephen G.

    Although trapped ion technology is well-suited for quantum information science, scalability of the system remains one of the main challenges. One of the challenges associated with scaling the ion trap quantum computer is the ability to individually manipulate the increasing number of qubits. Using micro-mirrors fabricated with micro-electromechanical systems (MEMS) technology, laser beams are focused on individual ions in a linear chain and steer the focal point in two dimensions. Multiple single qubit gates are demonstrated on trapped 171Yb+ qubits and the gate performance is characterized using quantum state tomography. The system features negligible crosstalk to neighboring ions (technologies demonstrated in this thesis can be integrated to form a single quantum register with all of the necessary resources to perform local gates as well as high fidelity readout and provide a photon link to other systems.

  10. PENTATRAP. A novel Penning-trap system for high-precision mass measurements

    Energy Technology Data Exchange (ETDEWEB)

    Doerr, Andreas

    2015-01-21

    The novel Penning-trap mass spectrometer PENTATRAP aims at mass-ratio determinations of medium-heavy to heavy ions with relative uncertainties below 10{sup -11}. From the mass ratios of certain ion species, the corresponding mass differences will be determined with sub-eV/c{sup 2} uncertainties. These mass differences are relevant for neutrino-mass experiments, a test of special relativity and tests of bound-state QED. Means to obtain the required precision are very stable trapping fields, the use of highly-charged ions produced by EBITs, a non-destructive cyclotron-frequency determination scheme employing detectors with single-ion sensitivity and a five-trap tower, that allows for measurement schemes being insensitive to magnetic field drifts. Within this thesis, part of the detection electronics was set up and tested under experimental conditions. A single-trap setup was realized. A Faraday cup in the trap tower enabled the proper adjustment of the settings of the beamline connecting the EBIT and the Penning-trap system, resulting in the first trapping of ions at PENTATRAP. A stabilization of switched voltages in the beamline and detailed studies of ion bunch characteristics allowed for reproducible loading of only a few ions. Detection of the axial oscillation of the trapped ions gave hints that in some cases, even single ions had been trapped. Furthermore, valuable conclusions about necessary modifications of the setup could be drawn.

  11. Charged particle traps II applications

    CERN Document Server

    Werth, Günther; Major, Fouad G

    2009-01-01

    This, the second volume of Charged Particle Traps, is devoted to applications, complementing the first volume’s comprehensive treatment of the theory and practice of charged particle traps, their many variants and refinements. In recent years, applications of far reaching importance have emerged ranging from the ultra-precise mass determinations of elementary particles and their antiparticles and short-lived isotopes, to high-resolution Zeeman spectroscopy on multiply-charged ions, to microwave and optical spectroscopy, some involving "forbidden" transitions from metastable states of such high resolution that optical frequency standards are realized by locking lasers to them. Further the potential application of trapped ions to quantum computing is explored, based on the extraordinary quantum state coherence made possible by the particle isolation. Consideration is given to the Paul and Penning traps as potential quantum information processors.

  12. Holes in magneto electrostatic traps

    International Nuclear Information System (INIS)

    Jones, R.

    1996-01-01

    We observe that in magneto electrostatic confinement (MEC) devices the magnetic surfaces are not always equipotentials. The lack of symmetry in the equipotential surfaces can result in holes in MEC plasma traps. (author)

  13. Trapping Triatominae in Silvatic Habitats

    Directory of Open Access Journals (Sweden)

    Noireau François

    2002-01-01

    Full Text Available Large-scale trials of a trapping system designed to collect silvatic Triatominae are reported. Live-baited adhesive traps were tested in various ecosystems and different triatomine habitats (arboreal and terrestrial. The trials were always successful, with a rate of positive habitats generally over 20% and reaching 48.4% for palm trees of the Amazon basin. Eleven species of Triatominae belonging to the three genera of public health importance (Triatoma, Rhodnius and Panstrongylus were captured. This trapping system provides an effective way to detect the presence of triatomines in terrestrial and arboreal silvatic habitats and represents a promising tool for ecological studies. Various lines of research are contemplated to improve the performance of this trapping system.

  14. The generic strategy trap.

    Science.gov (United States)

    Miller, D

    1992-01-01

    Management experts claim that for a company to thrive, it must concentrate on a single generic strategy--on one thing it does better than its rivals. But specialization also has its disadvantages. The author suggests that a broader, mixed approach may be preferable.

  15. Science, conservation, and camera traps

    Science.gov (United States)

    Nichols, James D.; Karanth, K. Ullas; O'Connel, Allan F.; O'Connell, Allan F.; Nichols, James D.; Karanth, K. Ullas

    2011-01-01

    Biologists commonly perceive camera traps as a new tool that enables them to enter the hitherto secret world of wild animals. Camera traps are being used in a wide range of studies dealing with animal ecology, behavior, and conservation. Our intention in this volume is not to simply present the various uses of camera traps, but to focus on their use in the conduct of science and conservation. In this chapter, we provide an overview of these two broad classes of endeavor and sketch the manner in which camera traps are likely to be able to contribute to them. Our main point here is that neither photographs of individual animals, nor detection history data, nor parameter estimates generated from detection histories are the ultimate objective of a camera trap study directed at either science or management. Instead, the ultimate objectives are best viewed as either gaining an understanding of how ecological systems work (science) or trying to make wise decisions that move systems from less desirable to more desirable states (conservation, management). Therefore, we briefly describe here basic approaches to science and management, emphasizing the role of field data and associated analyses in these processes. We provide examples of ways in which camera trap data can inform science and management.

  16. Cooperatively enhanced dipole forces from artificial atoms in trapped nanodiamonds

    Science.gov (United States)

    Juan, Mathieu L.; Bradac, Carlo; Besga, Benjamin; Johnsson, Mattias; Brennen, Gavin; Molina-Terriza, Gabriel; Volz, Thomas

    2017-03-01

    Optical trapping is a powerful tool to manipulate small particles, from micrometre-size beads in liquid environments to single atoms in vacuum. The trapping mechanism relies on the interaction between a dipole and the electric field of laser light. In atom trapping, the dominant contribution to the associated force typically comes from the allowed optical transition closest to the laser wavelength, whereas for mesoscopic particles it is given by the polarizability of the bulk material. Here, we show that for nanoscale diamond crystals containing a large number of artificial atoms, nitrogen-vacancy colour centres, the contributions from both the nanodiamond and the colour centres to the optical trapping strength can be simultaneously observed in a noisy liquid environment. For wavelengths around the zero-phonon line transition of the colour centres, we observe a 10% increase of overall trapping strength. The magnitude of this effect suggests that due to the large density of centres, cooperative effects between the artificial atoms contribute to the observed modification of the trapping strength. Our approach may enable the study of cooperativity in nanoscale solid-state systems and the use of atomic physics techniques in the field of nano-manipulation.

  17. A quasi-electrostatic trap for neutral atoms

    International Nuclear Information System (INIS)

    Engler, H.

    2000-01-01

    This thesis reports on the realization of a ''quasi-electrostatic trap'' (QUEST) for neutral atoms. Cesium ( 133 Cs) and Lithium ( 7 Li) atoms are stored, which represents for the first time a mixture of different species in an optical dipole trap. The trap is formed by the focused Gaussian beam of a 30 W cw CO 2 -laser. For a beam waist of 108 μm the resulting trap depth is κ B x 118 μK for Cesium and κ B x 48 μK for Lithium. We transfer up to 2 x 10 6 Cesium and 10 5 Lithium atoms from a magneto-optical trap into the QUEST. When simultaneously transferred, the atom number currently is reduced by roughly a factor of 10. Since photon scattering from the trapping light can be neglected, the QUEST represents an almost perfect conservative trapping potential. Atoms in the QUEST populate the electronic ground state sublevels. Arbitrary sublevels can be addressed via optical pumping. Due to the very low background gas pressure of 2 x 10 -11 mbar storage times of several minutes are realized. Evaporative cooling of Cesium is observed. In addition, laser cooling is applied to the trapped Cesium sample, which reduces the temperature from 25 μK to a value below 7 μK. If prepared in the upper hyper-fine ground state sublevel, spin changing collisions are observed not only within one single species, but also between the two different species. The corresponding relaxation rates are quantitatively analyzed. (orig.)

  18. Practical aspects of trapped ion mass spectrometry, 4 theory and instrumentation

    CERN Document Server

    March, Raymond E

    2010-01-01

    The expansion of the use of ion trapping in different areas of mass spectrometry and different areas of application indicates the value of a single source of information drawing together diverse inputs. This book provides an account of the theory and instrumentation of mass spectrometric applications and an introduction to ion trapping devices.

  19. The PS 200 catching trap: A new tool for ultra-low energy antiproton physics

    International Nuclear Information System (INIS)

    Holzscheiter, M.H.; Dyer, P.L.; King, N.S.P.; Lizon, D.C.; Morgan, G.L.; Schauer, M.M.; Schecker, J.A.; Hoibraten, S.; Lewis, R.A.; Otto, T.

    1994-01-01

    Approximately one million antiprotons have been trapped and electron cooled in the PS200 catching trap from a single fast extracted pulse from LEAR. The system is described in detail, different extraction schemes are discussed, and possible applications of this instrument to ultra-low energy atomic and nuclear physics with antiprotons are mentioned

  20. Y-Trap Cancer Immunotherapy Drug Targets Two Proteins

    Science.gov (United States)

    Two groups of researchers, working independently, have fused a TGF-beta receptor to a monoclonal antibody that targets a checkpoint protein. The result, this Cancer Currents blog describes, is a single hybrid molecule called a Y-trap that blocks two pathways used by tumors to evade the immune system.

  1. Experimental Investigation of Trapped Sine-Gordon Solitons

    DEFF Research Database (Denmark)

    Davidson, A.; Dueholm, B.; Kryger, B.

    1985-01-01

    We have observed for the first time a single sine-Gordon soliton trapped in an annular Josephson junction. This system offers a unique possibility to study undisturbed soliton motion. In the context of perturbation theory, the soliton may be viewed as a relativistic particle moving under a uniform...

  2. Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

    1993-01-01

    We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

  3. Electron spin resonance from NV centers in diamonds levitating in an ion trap

    International Nuclear Information System (INIS)

    Delord, T; Nicolas, L; Schwab, L; Hétet, G

    2017-01-01

    We report observations of the electron spin resonance (ESR) of nitrogen vacancy centers in diamonds that are levitating in an ion trap. Using a needle Paul trap operating under ambient conditions, we demonstrate efficient microwave driving of the electronic spin and show that the spin properties of deposited diamond particles measured by the ESR are retained in the Paul trap. We also exploit the ESR signal to show angle stability of single trapped mono-crystals, a necessary step towards spin-controlled levitating macroscopic objects. (paper)

  4. A magnetic particle micro-trap for large trapping surfaces

    KAUST Repository

    Gooneratne, Chinthaka P.

    2012-01-08

    Manipulation of micron-size magnetic particles of the superparamagnetic type contributes significantly in many applications like controlling the antibody/antigen binding process in immunoassays. Specifically, more target biomolecules can be attached/tagged and analyzed since the three dimensional structure of the magnetic particles increases the surface to volume ratio. Additionally, such biomolecular-tagged magnetic particles can be easily manipulated by an external magnetic field due to their superparamagnetic behavior. Therefore, magnetic particle- based immunoassays are extensively applied in micro-flow cytometry. The design of a square-loop micro-trap as a magnetic particle manipulator as well as numerical and experimental analysis is presented. Experimental results showed that the micro-trap could successfully trap and concentrate magnetic particles from a large to a small area with a high spatial range.

  5. A magnetic particle micro-trap for large trapping surfaces

    KAUST Repository

    Gooneratne, Chinthaka P.; Liang, Cai; Giouroudi, Ioanna; Kosel, Jü rgen

    2012-01-01

    Manipulation of micron-size magnetic particles of the superparamagnetic type contributes significantly in many applications like controlling the antibody/antigen binding process in immunoassays. Specifically, more target biomolecules can be attached/tagged and analyzed since the three dimensional structure of the magnetic particles increases the surface to volume ratio. Additionally, such biomolecular-tagged magnetic particles can be easily manipulated by an external magnetic field due to their superparamagnetic behavior. Therefore, magnetic particle- based immunoassays are extensively applied in micro-flow cytometry. The design of a square-loop micro-trap as a magnetic particle manipulator as well as numerical and experimental analysis is presented. Experimental results showed that the micro-trap could successfully trap and concentrate magnetic particles from a large to a small area with a high spatial range.

  6. Particle trapping in stimulated scattering processes

    International Nuclear Information System (INIS)

    Karttunen, S.J.; Heikkinen, J.A.

    1981-01-01

    Particle trapping effects on stimulated Brillouin and Raman scattering are investigated. A time and space dependent model assumes a Maxwellian plasma which is taken to be homogeneous in the interaction region. Ion trapping has a rather weak effect on stimulated Brillouin scattering and large reflectivities are obtained even in strong trapping regime. Stimulated Raman scattering is considerably reduced by electron trapping. Typically 15-20 times larger laser intensities are required to obtain same reflectivity levels than without trapping. (author)

  7. Calcium Atom Trap for Atom Trap Mass Spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Kwang Hoon; Park, Hyun Min; Han, Jae Min; Kim, Taek Soo; Cha, Yong Ho; Lim, Gwon; Jeong, Do Young [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2012-05-15

    Trace isotope analysis has been an important role in science, archaeological dating, geology, biology and nuclear industry. Artificially produced fission products such as Sr-90, Cs-135 and Kr-85 can be released to the environment when nuclear accident occurs and the reprocessing factory operates. Thus, the analysis of them has been of interest in nuclear industry. But it is difficult to detect them due to low natural abundance less then 10-10. The ultra-trace radio isotopes have been analyzed by the radio-chemical method, accelerator mass spectrometer, and laser based method. The radiochemical method has been used in the nuclear industry. But this method has disadvantages of long measurement time for long lived radioisotopes and toxic chemical process for the purification. The accelerator mass spectrometer has high isotope selectivity, but the system is huge and it has the isobar effects. The laser based method, such as RIMS (Resonance Ionization Mass Spectrometry) is a basically isobar-effect free method. Recently, ATTA (Atom Trap Trace Analysis), one of the laser based method, has been successfully demonstrated sufficient isotope selectivity with small system size. It has been applied for the detection of Kr-81 and Kr-85. However, it is not suitable for real sample detection, because it requires steady atomic beam generation during detection and is not allowed simultaneous detection of other isotopes. Therefore, we proposed the coupled method of Atom Trap and Mass Spectrometer. It consists of three parts, neutral atom trap, ionization and mass spectrometer. In this paper, we present the demonstration of the magneto-optical trap of neutral calcium. We discuss the isotope selective characteristics of the MOT (Magneto Optical Trap) of calcium by the fluorescence measurement. In addition, the frequency stabilization of the trap beam will be presented

  8. Tuning the Electronic and Dynamical Properties of a Molecule by Atom Trapping Chemistry.

    Science.gov (United States)

    Pham, Van Dong; Repain, Vincent; Chacon, Cyril; Bellec, Amandine; Girard, Yann; Rousset, Sylvie; Abad, Enrique; Dappe, Yannick J; Smogunov, Alexander; Lagoute, Jérôme

    2017-11-28

    The ability to trap adatoms with an organic molecule on a surface has been used to obtain a range of molecular functionalities controlled by the choice of the molecular trapping site and local deprotonation. The tetraphenylporphyrin molecule used in this study contains three types of trapping sites: two carbon rings (phenyl and pyrrole) and the center of a macrocycle. Catching a gold adatom on the carbon rings leads to an electronic doping of the molecule, whereas trapping the adatom at the macrocycle center with single deprotonation leads to a molecular rotor and a second deprotonation leads to a molecular jumper. We call "atom trapping chemistry" the control of the structure, electronic, and dynamical properties of a molecule achieved by trapping metallic atoms with a molecule on a surface. In addition to the examples previously described, we show that more complex structures can be envisaged.

  9. The carnegie protein trap library: a versatile tool for Drosophila developmental studies.

    Science.gov (United States)

    Buszczak, Michael; Paterno, Shelley; Lighthouse, Daniel; Bachman, Julia; Planck, Jamie; Owen, Stephenie; Skora, Andrew D; Nystul, Todd G; Ohlstein, Benjamin; Allen, Anna; Wilhelm, James E; Murphy, Terence D; Levis, Robert W; Matunis, Erika; Srivali, Nahathai; Hoskins, Roger A; Spradling, Allan C

    2007-03-01

    Metazoan physiology depends on intricate patterns of gene expression that remain poorly known. Using transposon mutagenesis in Drosophila, we constructed a library of 7404 protein trap and enhancer trap lines, the Carnegie collection, to facilitate gene expression mapping at single-cell resolution. By sequencing the genomic insertion sites, determining splicing patterns downstream of the enhanced green fluorescent protein (EGFP) exon, and analyzing expression patterns in the ovary and salivary gland, we found that 600-900 different genes are trapped in our collection. A core set of 244 lines trapped different identifiable protein isoforms, while insertions likely to act as GFP-enhancer traps were found in 256 additional genes. At least 8 novel genes were also identified. Our results demonstrate that the Carnegie collection will be useful as a discovery tool in diverse areas of cell and developmental biology and suggest new strategies for greatly increasing the coverage of the Drosophila proteome with protein trap insertions.

  10. Sawtooth activity of the ion cloud in an electron-beam ion trap

    International Nuclear Information System (INIS)

    Radtke, R.; Biedermann, C.

    2003-01-01

    The dynamics of an ensemble of highly charged Ar and Ba ions in an electron-beam ion trap (EBIT) was studied by recording time-resolved x-ray spectra emitted from trapped ions. Sawtoothlike signatures manifest in the spectra for a variety of EBIT operating conditions indicating a sudden collapse of the ion inventory in the trap. The collapse occurs on a time scale of approximately 100 ms and the evolution of the sawteeth is very sensitive to parameters such as electron-beam current and axial trap depth. Analysis of the measurements is based on a time-dependent calculation of the trapping process showing that sawtooth activity is caused by the feedback between the low-Z argon and high-Z barium ions. This unexpected behavior demonstrates the importance of nonlinear effects in electron-beam traps containing more than a single ion species

  11. Trapped-ion quantum logic gates based on oscillating magnetic fields

    Science.gov (United States)

    Ospelkaus, Christian; Langer, Christopher E.; Amini, Jason M.; Brown, Kenton R.; Leibfried, Dietrich; Wineland, David J.

    2009-05-01

    Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing. With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ions and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering decoherence, a fundamental source of decoherence in laser-mediated gates. A potentially beneficial environment for the implementation of such schemes is a cryogenic ion trap, because small length scale traps with low motional heating rates can be realized. A cryogenic ion trap experiment is currently under construction at NIST.

  12. Implementation of a symmetric surface-electrode ion trap with field compensation using a modulated Raman effect

    International Nuclear Information System (INIS)

    Allcock, D T C; Sherman, J A; Stacey, D N; Burrell, A H; Curtis, M J; Imreh, G; Linke, N M; Szwer, D J; Webster, S C; Steane, A M; Lucas, D M

    2010-01-01

    We describe a new electrode design for a surface-electrode Paul trap, which allows rotation of the normal modes out of the trap plane, and a technique for micromotion compensation in all directions using a two-photon process, which avoids the need for an ultraviolet laser directed to the trap plane. The fabrication and characterization of the trap are described, as well as its implementation for the trapping and cooling of single Ca + ions. We also propose a repumping scheme that increases ion fluorescence and simplifies heating rate measurements obtained by time-resolved ion fluorescence during Doppler cooling.

  13. Implementation of a symmetric surface-electrode ion trap with field compensation using a modulated Raman effect

    Science.gov (United States)

    Allcock, D. T. C.; Sherman, J. A.; Stacey, D. N.; Burrell, A. H.; Curtis, M. J.; Imreh, G.; Linke, N. M.; Szwer, D. J.; Webster, S. C.; Steane, A. M.; Lucas, D. M.

    2010-05-01

    We describe a new electrode design for a surface-electrode Paul trap, which allows rotation of the normal modes out of the trap plane, and a technique for micromotion compensation in all directions using a two-photon process, which avoids the need for an ultraviolet laser directed to the trap plane. The fabrication and characterization of the trap are described, as well as its implementation for the trapping and cooling of single Ca+ ions. We also propose a repumping scheme that increases ion fluorescence and simplifies heating rate measurements obtained by time-resolved ion fluorescence during Doppler cooling.

  14. Neutral atom traps of radioactives

    International Nuclear Information System (INIS)

    Behr, J.A.

    2003-01-01

    Neutral atoms trapped with modern laser cooling techniques offer the promise of improving several broad classes of experiments with radioactive isotopes. In nuclear β decay, neutrino spectroscopy from beta-recoil coincidences, along with highly polarized samples, enable experiments to search for non-Standard Model interactions, test whether parity symmetry is maximally violated, and search for new sources of time reversal violation. Ongoing efforts at TRIUMF, Los Alamos and Berkeley will be highlighted. The traps also offer bright sources for Doppler-free spectroscopy, particularly in high-Z atoms where precision measurements could measure the strength of weak neutral nucleon-nucleon and electron-nucleon interactions. Physics with francium atoms has been vigorously pursued at Stony Brook. Several facilities plan work with radioactive atom traps; concrete plans and efforts at KVI Groningen and Legnaro will be among those summarized. Contributions to the multidisciplinary field of trace analysis will be left up to other presenters

  15. Neutral atom traps of radioactives

    CERN Document Server

    Behr, J A

    2003-01-01

    Neutral atoms trapped with modern laser cooling techniques offer the promise of improving several broad classes of experiments with radioactive isotopes. In nuclear beta decay, neutrino spectroscopy from beta-recoil coincidences, along with highly polarized samples, enable experiments to search for non-Standard Model interactions, test whether parity symmetry is maximally violated, and search for new sources of time reversal violation. Ongoing efforts at TRIUMF, Los Alamos and Berkeley will be highlighted. The traps also offer bright sources for Doppler-free spectroscopy, particularly in high-Z atoms where precision measurements could measure the strength of weak neutral nucleon-nucleon and electron-nucleon interactions. Physics with francium atoms has been vigorously pursued at Stony Brook. Several facilities plan work with radioactive atom traps; concrete plans and efforts at KVI Groningen and Legnaro will be among those summarized. Contributions to the multidisciplinary field of trace analysis will be left...

  16. Trapped atoms along nanophotonic resonators

    Science.gov (United States)

    Fields, Brian; Kim, May; Chang, Tzu-Han; Hung, Chen-Lung

    2017-04-01

    Many-body systems subject to long-range interactions have remained a very challenging topic experimentally. Ultracold atoms trapped in extreme proximity to the surface of nanophotonic structures provides a dynamic system combining the strong atom-atom interactions mediated by guided mode photons with the exquisite control implemented with trapped atom systems. The hybrid system promises pair-wise tunability of long-range interactions between atomic pseudo spins, allowing studies of quantum magnetism extending far beyond nearest neighbor interactions. In this talk, we will discuss our current status developing high quality nanophotonic ring resonators, engineered on CMOS compatible optical chips with integrated nanostructures that, in combination with a side illuminating beam, can realize stable atom traps approximately 100nm above the surface. We will report on our progress towards loading arrays of cold atoms near the surface of these structures and studying atom-atom interaction mediated by photons with high cooperativity.

  17. Open trap with ambipolar mirrors

    International Nuclear Information System (INIS)

    Dimov, G.I.; Zakajdakov, V.V.; Kishinevskij, M.E.

    1977-01-01

    Results of numerical calculations on the behaviour of a thermonuclear plasma, allowing for α-particles in a trap with longitudinal confinement of the main ions by ambipolar electric fields are presented. This trap is formed by connecting two small-volume ''mirrortrons'' to an ordinary open trap. Into the extreme mirrortrons, approximately 1-MeV ions are introduced continuously by ionization of atomic beams on the plasma, and approximately 10-keV ions are similarly introduced into the main central region of the trap. By a suitable choice of injection currents, the plasma density established in the extreme mirrortrons is higher than in the central region. As a result of the quasi-neutrality condition, a longitudinal ambipolar field forming a potential well not only for electrons but also for the central ions is formed in the plasma. When the depth of the well for the central ions is much greater than their temperature, their life-time considerably exceeds the time of confinement by the magnetic mirrors. As a result, the plasma density is constant over the entire length of the central mirrortron, including the regions near the mirrors, and an ambipolar field is formed only in the extreme mirrortrons. The distribution of central ions and ambipolar potential in the extreme mirrortrons is uniquely determined by the density distribution of fast extreme ions. It is shown in the present study that an amplification coefficient Q as high as desired can, in principle, be reached in the trap under consideration, allowing for α-particles. However, this requires high magnetic fields in the mirrors and a sufficient length of the central mirrotron. It is shown that for moderate values of Q=3-8, it is desirable not to confine the central fast α-particles. To achieve a coefficient of Q=5, it is necessary to create fields of 250 kG in the mirrors, and the length of the trap must not be greater than 100 m. (author)

  18. Effects of coating on the optical trapping efficiency of microspheres via geometrical optics approximation.

    Science.gov (United States)

    Park, Bum Jun; Furst, Eric M

    2014-09-23

    We present the optical trapping forces that are generated when a single laser beam strongly focuses on a coated dielectric microsphere. On the basis of geometrical optics approximation (GOA), in which a particle intercepts all of the rays that make up a single laser beam, we calculate the trapping forces with varying coating thickness and refractive index values. To increase the optical trapping efficiency, the refractive index (n(b)) of the coating is selected such that n(a) < n(b) < n(c), where na and nc are the refractive indices of the medium and the core material, respectively. The thickness of the coating also increases trapping efficiency. Importantly, we find that trapping forces for the coated particles are predominantly determined by two rays: the incident ray and the first refracted ray to the medium.

  19. Ion trap architectures and new directions

    Science.gov (United States)

    Siverns, James D.; Quraishi, Qudsia

    2017-12-01

    Trapped ion technology has seen advances in performance, robustness and versatility over the last decade. With increasing numbers of trapped ion groups worldwide, a myriad of trap architectures are currently in use. Applications of trapped ions include: quantum simulation, computing and networking, time standards and fundamental studies in quantum dynamics. Design of such traps is driven by these various research aims, but some universally desirable properties have lead to the development of ion trap foundries. Additionally, the excellent control achievable with trapped ions and the ability to do photonic readout has allowed progress on quantum networking using entanglement between remotely situated ion-based nodes. Here, we present a selection of trap architectures currently in use by the community and present their most salient characteristics, identifying features particularly suited for quantum networking. We also discuss our own in-house research efforts aimed at long-distance trapped ion networking.

  20. Plasma manipulation techniques for positron storage in a multicell trap

    International Nuclear Information System (INIS)

    Danielson, J. R.; Weber, T. R.; Surko, C. M.

    2006-01-01

    New plasma manipulation techniques are described that are central to the development of a multicell Penning trap designed to increase positron storage by orders of magnitude (e.g., to particle numbers N≥10 12 ). The experiments are done using test electron plasmas. A technique is described to move plasmas across the confining magnetic field and to deposit them at specific radial and azimuthal positions. Techniques to fill and operate two in-line plasma cells simultaneously, and the use of 1 kV confinement potentials are demonstrated. These experiments establish the capabilities to create, confine, and manipulate plasmas with the parameters required for a multicell trap; namely, particle numbers >10 10 in a single cell with plasma temperature ≤0.2 eV for plasma lengths ∼10 cm and radii ≤0.2 cm. The updated design of a multicell positron trap for 10 12 particles is described

  1. Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

    Science.gov (United States)

    Zebrev, G. I.; Gorbunov, M. S.; Pershenkov, V. S.

    2008-03-01

    The sensitivity of sub-100 nm devices to microdose effects, which can be considered as intermediate case between cumulative total dose and single event errors, is investigated. A detailed study of radiation-induced leakage due to stochastic charge trapping in irradiated planar and nonplanar devices is developed. The influence of High-K insulators on nanoscale ICs reliability is discussed. Low critical values of trapped charge demonstrate a high sensitivity to single event effect.

  2. Artificial covering on trap nests improves the colonization of trap-nesting wasps

    OpenAIRE

    Taki, Hisatomo; Kevan, Peter G.; Viana, Blandina Felipe; Silva, Fabiana O.; Buck, Matthias

    2008-01-01

    Acesso restrito: Texto completo. p. 225-229 To evaluate the role that a trap-nest cover might have on sampling methodologies, the abundance of each species of trap-nesting Hymenoptera and the parasitism rate in a Canadian forest were compared between artificially covered and uncovered traps. Of trap tubes exposed at eight forest sites in six trap-nest boxes, 531 trap tubes were occupied and 1216 individuals of 12 wasp species of four predatory families, Vespidae (Eumeninae), Crabronidae...

  3. Magneto-mechanical trapping systems for biological target detection

    International Nuclear Information System (INIS)

    Li, Fuquan; Kodzius, Rimantas; Gooneratne, Chinthaka P.; Foulds, Ian G.; Kosel, Jürgen

    2014-01-01

    We demonstrate a magnetic microsystem capable of detecting nucleic acids via the size difference between bare magnetic beads and bead compounds. The bead compounds are formed through linking nonmagnetic beads and magnetic beads by the target nucleic acids. The system comprises a tunnel magneto-resistive (TMR) sensor, a trapping well, and a bead-concentrator. The TMR sensor detects the stray field of magnetic beads inside the trapping well, while the sensor output depends on the number of beads. The size of the bead compounds is larger than that of bare magnetic beads, and fewer magnetic beads are required to fill the trapping well. The bead-concentrator, in turn, is capable of filling the trap in a controlled fashion and so to shorten the assay time. The bead-concentrator includes conducting loops surrounding the trapping well and a conducting line underneath. The central conducting line serves to attract magnetic beads in the trapping well and provides a magnetic field to magnetize them so to make them detectable by the TMR sensor. This system excels by its simplicity in that the DNA is incubated with magnetic and nonmagnetic beads, and the solution is then applied to the chip and analyzed in a single step. In current experiments, a signal-to-noise ratio of 40.3 dB was obtained for a solution containing 20.8 nM of DNA. The sensitivity and applicability of this method can be controlled by the size or concentration of the nonmagnetic bead, or by the dimension of the trapping well. (author)

  4. Magneto-mechanical trapping systems for biological target detection

    KAUST Repository

    Li, Fuquan

    2014-03-29

    We demonstrate a magnetic microsystem capable of detecting nucleic acids via the size difference between bare magnetic beads and bead compounds. The bead compounds are formed through linking nonmagnetic beads and magnetic beads by the target nucleic acids. The system comprises a tunnel magneto-resistive (TMR) sensor, a trapping well, and a bead-concentrator. The TMR sensor detects the stray field of magnetic beads inside the trapping well, while the sensor output depends on the number of beads. The size of the bead compounds is larger than that of bare magnetic beads, and fewer magnetic beads are required to fill the trapping well. The bead-concentrator, in turn, is capable of filling the trap in a controlled fashion and so to shorten the assay time. The bead-concentrator includes conducting loops surrounding the trapping well and a conducting line underneath. The central conducting line serves to attract magnetic beads in the trapping well and provides a magnetic field to magnetize them so to make them detectable by the TMR sensor. This system excels by its simplicity in that the DNA is incubated with magnetic and nonmagnetic beads, and the solution is then applied to the chip and analyzed in a single step. In current experiments, a signal-to-noise ratio of 40.3 dB was obtained for a solution containing 20.8 nM of DNA. The sensitivity and applicability of this method can be controlled by the size or concentration of the nonmagnetic bead, or by the dimension of the trapping well.

  5. Parallel Transport Quantum Logic Gates with Trapped Ions.

    Science.gov (United States)

    de Clercq, Ludwig E; Lo, Hsiang-Yu; Marinelli, Matteo; Nadlinger, David; Oswald, Robin; Negnevitsky, Vlad; Kienzler, Daniel; Keitch, Ben; Home, Jonathan P

    2016-02-26

    We demonstrate single-qubit operations by transporting a beryllium ion with a controlled velocity through a stationary laser beam. We use these to perform coherent sequences of quantum operations, and to perform parallel quantum logic gates on two ions in different processing zones of a multiplexed ion trap chip using a single recycled laser beam. For the latter, we demonstrate individually addressed single-qubit gates by local control of the speed of each ion. The fidelities we observe are consistent with operations performed using standard methods involving static ions and pulsed laser fields. This work therefore provides a path to scalable ion trap quantum computing with reduced requirements on the optical control complexity.

  6. Microfabricated linear Paul-Straubel ion trap

    Science.gov (United States)

    Mangan, Michael A [Albuquerque, NM; Blain, Matthew G [Albuquerque, NM; Tigges, Chris P [Albuquerque, NM; Linker, Kevin L [Albuquerque, NM

    2011-04-19

    An array of microfabricated linear Paul-Straubel ion traps can be used for mass spectrometric applications. Each ion trap comprises two parallel inner RF electrodes and two parallel outer DC control electrodes symmetric about a central trap axis and suspended over an opening in a substrate. Neighboring ion traps in the array can share a common outer DC control electrode. The ions confined transversely by an RF quadrupole electric field potential well on the ion trap axis. The array can trap a wide array of ions.

  7. Landau damping in trapped Bose condensed gases

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, B; Zaremba, E [Department of Physics, Queen' s University, Kingston, ON K7L 3N6 (Canada)

    2003-07-01

    We study Landau damping in dilute Bose-Einstein condensed gases in both spherical and prolate ellipsoidal harmonic traps. We solve the Bogoliubov equations for the mode spectrum in both of these cases, and calculate the damping by summing over transitions between excited quasiparticle states. The results for the spherical case are compared to those obtained in the Hartree-Fock (HF) approximation, where the excitations take on a single-particle character, and excellent agreement between the two approaches is found. We have also taken the semiclassical limit of the HF approximation and obtain a novel expression for the Landau damping rate involving the time-dependent self-diffusion function of the thermal cloud. As a final approach, we study the decay of a condensate mode by making use of dynamical simulations in which both the condensate and thermal cloud are evolved explicitly as a function of time. A detailed comparison of all these methods over a wide range of sample sizes and trap geometries is presented.

  8. An optical trap for relativistic plasma

    International Nuclear Information System (INIS)

    Zhang Ping; Saleh, Ned; Chen Shouyuan; Sheng Zhengming; Umstadter, Donald

    2003-01-01

    The first optical trap capable of confining relativistic electrons, with kinetic energy ≤350 keV was created by the interference of spatially and temporally overlapping terawatt power, 400 fs duration laser pulses (≤2.4x10 18 W/cm 2 ) in plasma. Analysis and computer simulation predicted that the plasma density was greatly modulated, reaching a peak density up to 10 times the background density (n e /n 0 ∼10) at the interference minima. Associated with this charge displacement, a direct-current electrostatic field of strength of ∼2x10 11 eV/m was excited. These predictions were confirmed experimentally by Thomson and Raman scattering diagnostics. Also confirmed were predictions that the electron density grating acted as a multi-layer mirror to transfer energy between the crossed laser beams, resulting in the power of the weaker laser beam being nearly 50% increased. Furthermore, it was predicted that the optical trap acted to heat electrons, increasing their temperature by two orders of magnitude. The experimental results showed that the number of high energy electrons accelerated along the direction of one of the laser beams was enhanced by a factor of 3 and electron temperature was increased ∼100 keV as compared with single-beam illumination

  9. Optical trapping and Raman spectroscopy of solid particles.

    Science.gov (United States)

    Rkiouak, L; Tang, M J; Camp, J C J; McGregor, J; Watson, I M; Cox, R A; Kalberer, M; Ward, A D; Pope, F D

    2014-06-21

    The heterogeneous interactions of gas molecules on solid particles are crucial in many areas of science, engineering and technology. Such interactions play a critical role in atmospheric chemistry and in heterogeneous catalysis, a key technology in the energy and chemical industries. Investigating heterogeneous interactions upon single levitated particles can provide significant insight into these important processes. Various methodologies exist for levitating micron sized particles including: optical, electrical and acoustic techniques. Prior to this study, the optical levitation of solid micron scale particles has proved difficult to achieve over timescales relevant to the above applications. In this work, a new vertically configured counter propagating dual beam optical trap was optimized to levitate a range of solid particles in air. Silica (SiO2), α-alumina (Al2O3), titania (TiO2) and polystyrene were stably trapped with a high trapping efficiency (Q = 0.42). The longest stable trapping experiment was conducted continuously for 24 hours, and there are no obvious constraints on trapping time beyond this period. Therefore, the methodology described in this paper should be of major benefit to various research communities. The strength of the new technique is demonstrated by the simultaneous levitation and spectroscopic interrogation of silica particles by Raman spectroscopy. In particular, the adsorption of water upon silica was investigated under controlled relative humidity environments. Furthermore, the collision and coagulation behaviour of silica particles with microdroplets of sulphuric acid was followed using both optical imaging and Raman spectroscopy.

  10. Ion Motion Stability in Asymmetric Surface Electrode Ion Traps

    Science.gov (United States)

    Shaikh, Fayaz; Ozakin, Arkadas

    2010-03-01

    Many recently developed designs of the surface electrode ion traps for quantum information processing have asymmetry built into their geometries. The asymmetry helps rotate the trap axes to angles with respect to electrode surface that facilitate laser cooling of ions but introduces a relative angle between the RF and DC fields and invalidates the classical stability analysis of the symmetric case for which the equations of motion are decoupled. For asymmetric case the classical motion of a single ion is given by a coupled, multi-dimensional version of Mathieu's equation. In this poster we discuss the stability diagram of asymmetric surface traps by performing an approximate multiple scale perturbation analysis of the coupled Mathieu equations, and validate the results with numerical simulations. After obtaining the stability diagram for the linear fields, we simulate the motion of an ion in a given asymmetric surface trap, utilizing a method-of-moments calculation of the electrode fields. We obtain the stability diagram and compare it with the ideal case to find the region of validity. Finally, we compare the results of our stability analysis to experiments conducted on a microfabricated asymmetric surface trap.

  11. A versatile electrostatic trap with open optical access

    Science.gov (United States)

    Li, Sheng-Qiang; Yin, Jian-Ping

    2018-04-01

    A versatile electrostatic trap with open optical access for cold polar molecules in weak-field-seeking state is proposed in this paper. The trap is composed of a pair of disk electrodes and a hexapole. With the help of a finite element software, the spatial distribution of the electrostatic field is calculated. The results indicate that a three-dimensional closed electrostatic trap is formed. Taking ND3 molecules as an example, the dynamic process of loading and trapping is simulated. The results show that when the velocity of the molecular beam is 10 m/s and the loading time is 0.9964 ms, the maximum loading efficiency reaches 94.25% and the temperature of the trapped molecules reaches about 30.3 mK. A single well can be split into two wells, which is of significant importance to the precision measurement and interference of matter waves. This scheme, in addition, can be further miniaturized to construct one-dimensional, two-dimensional, and three-dimensional spatial electrostatic lattices.

  12. Asymmetric Penning trap coherent states

    International Nuclear Information System (INIS)

    Contreras-Astorga, Alonso; Fernandez, David J.

    2010-01-01

    By using a matrix technique, which allows to identify directly the ladder operators, the coherent states of the asymmetric Penning trap are derived as eigenstates of the appropriate annihilation operators. They are compared with those obtained through the displacement operator method.

  13. Indeterminacy, sunspots, and development traps

    Czech Academy of Sciences Publication Activity Database

    Slobodyan, Sergey

    2005-01-01

    Roč. 29, 1-2 (2005), s. 159-185 ISSN 0165-1889 Institutional research plan: CEZ:AV0Z70850503 Keywords : indeterminacy * development trap * stochastic stability Subject RIV: AH - Economics Impact factor: 0.691, year: 2005 http://dx.doi.org/10.1016/j.jedc.2003.04.011

  14. Efficiency of subaquatic light traps

    Czech Academy of Sciences Publication Activity Database

    Ditrich, Tomáš; Čihák, P.

    2017-01-01

    Roč. 38, č. 3 (2017), s. 171-184 ISSN 0165-0424 R&D Projects: GA ČR(CZ) GA14-29857S Institutional support: RVO:60077344 Keywords : Heteroptera * Diptera * light trap Subject RIV: EH - Ecology, Behaviour OBOR OECD: Ecology Impact factor: 0.524, year: 2016

  15. The rise of trapped populations

    Directory of Open Access Journals (Sweden)

    April T Humble

    2014-02-01

    Full Text Available As border security increases and borders become less permeable, cross-border migration is becoming increasingly difficult, selective and dangerous. Growing numbers of people are becoming trapped in their own countries or in transit countries, or being forced to roam border areas, unable to access legal protection or basic social necessities.

  16. Magnetic trapping of Rydberg atoms

    NARCIS (Netherlands)

    Niestadt, D.; Naber, J.; Kokkelmans, S.J.J.M.F.; Spreeuw, R.J.C.

    2016-01-01

    Magnetic trapping is a well-established technique for ground state atoms. We seek to extend this concept to Rydberg atoms. Rydberg atoms are important for current visions of quantum simulators that will be used in the near future to simulate and analyse quantum problems. Current efforts in Amsterdam

  17. Quantum computing with trapped ions

    International Nuclear Information System (INIS)

    Haeffner, H.; Roos, C.F.; Blatt, R.

    2008-01-01

    Quantum computers hold the promise of solving certain computational tasks much more efficiently than classical computers. We review recent experimental advances towards a quantum computer with trapped ions. In particular, various implementations of qubits, quantum gates and some key experiments are discussed. Furthermore, we review some implementations of quantum algorithms such as a deterministic teleportation of quantum information and an error correction scheme

  18. A small trapped-ion quantum register

    International Nuclear Information System (INIS)

    Kielpinski, D

    2003-01-01

    We review experiments performed at the National Institute of Standards and Technology on entanglement, Bell's inequality and decoherence-free subspaces (DFSs) in a quantum register of trapped 9 Be + ions. The group of Dr David Wineland has demonstrated entanglement of up to four ions using the technique of Molmer and Sorensen. This method produces the state (|↓↓> + |↑↑>)/√2 for two ions and the state (|↓↓↓↓> + |↑↑↑↑>)/√2 for four ions. The entanglement was generated deterministically in each shot of the experiment. Measurements on the two-ion entangled state violate Bell's inequality at the 8σ level. Because of the high detector efficiency of the apparatus, this experiment closes the detector loophole for Bell's inequality measurements for the first time. This measurement is also the first violation of Bell's inequality by massive particles that does not implicitly assume results from quantum mechanics. The group also demonstrated measurement of an interferometric phase with precision better than the shot-noise limit using a two-ion entangled state. A large-scale version of this scheme could improve the signal-to-noise ratio of atomic clocks by orders of magnitude. Further experiments demonstrated reversible encoding of an arbitrary qubit, originally contained in one ion, into a DFS of two ions. The DFS-encoded qubit resists applied collective dephasing noise and retains coherence under ambient conditions 3.6 times longer than does an unencoded qubit. The encoding method, which uses single-ion gates and the two-ion entangling gate, demonstrates all the elements required for two-qubit universal quantum logic. Finally, we describe an architecture for a large-scale ion trap quantum computer. By performing logic gates on small numbers of ions trapped in separate regions of the array, we take advantage of existing techniques for manipulating small trapped-ion quantum registers while enabling massively parallel gate operation. Encoding the

  19. Single bubble sonoluminescence

    NARCIS (Netherlands)

    Brenner, Michael P.; Hilgenfeldt, Sascha; Lohse, Detlef

    2002-01-01

    Single-bubble sonoluminescence occurs when an acoustically trapped and periodically driven gas bubble collapses so strongly that the energy focusing at collapse leads to light emission. Detailed experiments have demonstrated the unique properties of this system: the spectrum of the emitted light

  20. 50 CFR 697.19 - Trap limits and trap tag requirements for vessels fishing with lobster traps.

    Science.gov (United States)

    2010-10-01

    ... vessels fishing with lobster traps. 697.19 Section 697.19 Wildlife and Fisheries FISHERY CONSERVATION AND... requirements for vessels fishing with lobster traps. (a) Trap limits for vessels fishing or authorized to fish... management area designation certificate or valid limited access American lobster permit specifying one or...

  1. Charge trapping and de-trapping in isolated CdSe/ZnS nanocrystals under an external electric field: indirect evidence for a permanent dipole moment.

    Science.gov (United States)

    Zang, Huidong; Cristea, Mihail; Shen, Xuan; Liu, Mingzhao; Camino, Fernando; Cotlet, Mircea

    2015-09-28

    Single nanoparticle studies of charge trapping and de-trapping in core/shell CdSe/ZnS nanocrystals incorporated into an insulating matrix and subjected to an external electric field demonstrate the ability to reversibly modulate the exciton dynamics and photoluminescence blinking while providing indirect evidence for the existence of a permanent ground state dipole moment in such nanocrystals. A model assuming the presence of energetically deep charge traps physically aligned along the direction of the permanent dipole is proposed in order to explain the dynamics of nanocrystal blinking in the presence of a permanent dipole moment.

  2. Vortices trapped in discrete Josephson rings

    International Nuclear Information System (INIS)

    Van der Zanta, H.S.J.; Orlando, T.P.; Watanabe, Shinya; Strogatz, S.H.

    1994-01-01

    We report the first measurements of current- (I-V) characteristics of discrete rings of Josephson junctions. As I is increased, resonant steps appear in the I-V curve, due to phase-locking between a propagating, trapped vortex and the linear waves excited in its wake. Unexpectedly, the phase velocity of the linear waves, not the group velocity, is the physically important quantity and mode numbers outside the Brillouin zone are relevant. Our measurements show that away from the resonant steps, a single vortex can move in an environment with very little damping, making the discrete one-dimensional ring a well-defined model system for the study of ballistic and quantum vortex experiments. ((orig.))

  3. Vortices trapped in discrete Josephson rings

    Energy Technology Data Exchange (ETDEWEB)

    Van der Zanta, H.S.J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Orlando, T.P. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Watanabe, Shinya [Department of Mathematics, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Strogatz, S.H. [Department of Mathematics, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    1994-12-01

    We report the first measurements of current- (I-V) characteristics of discrete rings of Josephson junctions. As I is increased, resonant steps appear in the I-V curve, due to phase-locking between a propagating, trapped vortex and the linear waves excited in its wake. Unexpectedly, the phase velocity of the linear waves, not the group velocity, is the physically important quantity and mode numbers outside the Brillouin zone are relevant. Our measurements show that away from the resonant steps, a single vortex can move in an environment with very little damping, making the discrete one-dimensional ring a well-defined model system for the study of ballistic and quantum vortex experiments. ((orig.)).

  4. Classical region of a trapped Bose gas

    Energy Technology Data Exchange (ETDEWEB)

    Blakie, P Blair [Jack Dodd Centre for Photonics and Ultra-Cold Atoms, University of Otago, Dunedin (New Zealand); Davis, Matthew J [ARC Centre of Excellence for Quantum-Atom Optics, School of Physical Sciences, University of Queensland, Brisbane, QLD 4072 (Australia)

    2007-06-14

    The classical region of a Bose gas consists of all single particle modes that have a high average occupation and are well described by a classical field. Highly occupied modes only occur in massive Bose gases at ultra-cold temperatures, in contrast to the photon case where there are highly occupied modes at all temperatures. For the Bose gas the number of these modes is dependent on the temperature, the total number of particles and their interaction strength. In this paper, we characterize the classical region of a harmonically trapped Bose gas over a wide parameter regime. We use a Hartree-Fock approach to account for the effects of interactions, which we observe to significantly change the classical region as compared to the idealized case. We compare our results to full classical field calculations and show that the Hartree-Fock approach provides a qualitatively accurate description of a classical region for the interacting gas.

  5. Axicon-based annular laser trap for studies on sperm activity

    Science.gov (United States)

    Shao, Bing; Vinson, Jaclyn M.; Botvinick, Elliot L.; Esener, Sadik C.; Berns, Michael W.

    2005-08-01

    As a powerful and noninvasive tool, laser trapping has been widely applied for the confinement and physiological study of biological cells and organelles. Researchers have used the single spot laser trap to hold individual sperm and quantitatively evaluated the motile force generated by a sperm. Early studies revealed the relationship between sperm motility and swimming behavior and helped the investigations in medical aspects of sperm activity. As sperm chemotaxis draws more and more interest in fertilization research, the studies on sperm-egg communication may help to explain male or female infertility and provide exciting new approaches to contraception. However, single spot laser trapping can only be used to investigate an individual target, which has limits in efficiency and throughput. To study the chemotactic response of sperm to eggs and to characterize sperm motility, an annular laser trap with a diameter of several hundred microns is designed, simulated with ray tracing tool, and implemented. An axicon transforms the wavefront such that the laser beam is incident on the microscope objective from all directions while filling the back aperture completely for high efficiency trapping. A trapping experiment with microspheres is carried out to evaluate the system performance. The power requirement for annular sperm trapping is determined experimentally and compared with theoretical calculations. With a chemo-attractant located in the center and sperm approaching from all directions, the annular laser trapping could serve as a speed bump for sperm so that motility characterization and fertility sorting can be performed efficiently.

  6. A synthesized mating pheromone component increases adult sea lamprey (Petromyzon marinus) trap capture in management scenarios

    Science.gov (United States)

    Johnson, Nicholas S.; Siefkes, Michael J.; Wagner, C. Michael; Dawson, Heather; Wang, Huiyong; Steeves, Todd; Twohey, Michael; Li, Weiming

    2013-01-01

    Application of chemical cues to manipulate adult sea lamprey (Petromyzon marinus) behavior is among the options considered for new sea lamprey control techniques in the Laurentian Great Lakes. A male mating pheromone component, 7a,12a,24-trihydroxy-3-one-5a-cholan-24-sulfate (3kPZS), lures ovulated female sea lamprey upstream into baited traps in experimental contexts with no odorant competition. A critical knowledge gap is whether this single pheromone component influences adult sea lamprey behavior in management contexts containing free-ranging sea lampreys. A solution of 3kPZS to reach a final in-stream concentration of 10-12 mol·L-1 was applied to eight Michigan streams at existing sea lamprey traps over 3 years, and catch rates were compared between paired 3kPZS-baited and unbaited traps. 3kPZS-baited traps captured significantly more sexually immature and mature sea lampreys, and overall yearly trapping efficiency within a stream averaged 10% higher during years when 3kPZS was applied. Video analysis of a trap funnel showed that the likelihood of sea lamprey trap entry after trap encounter was higher when the trap was 3kPZS baited. Our approach serves as a model for the development of similar control tools for sea lamprey and other aquatic invaders.

  7. Scaling ion traps for quantum computing

    CSIR Research Space (South Africa)

    Uys, H

    2010-09-01

    Full Text Available The design, fabrication and preliminary testing of a chipscale, multi-zone, surface electrode ion trap is reported. The modular design and fabrication techniques used are anticipated to advance scalability of ion trap quantum computing architectures...

  8. Servo control of an optical trap.

    Science.gov (United States)

    Wulff, Kurt D; Cole, Daniel G; Clark, Robert L

    2007-08-01

    A versatile optical trap has been constructed to control the position of trapped objects and ultimately to apply specified forces using feedback control. While the design, development, and use of optical traps has been extensive and feedback control has played a critical role in pushing the state of the art, few comprehensive examinations of feedback control of optical traps have been undertaken. Furthermore, as the requirements are pushed to ever smaller distances and forces, the performance of optical traps reaches limits. It is well understood that feedback control can result in both positive and negative effects in controlled systems. We give an analysis of the trapping limits as well as introducing an optical trap with a feedback control scheme that dramatically improves an optical trap's sensitivity at low frequencies.

  9. Unusual Case of Suicide With a Modified Trap Gun.

    Science.gov (United States)

    Vadysinghe, Amal; Dassanayake, Prasanna; Wickramasinghe, Medhani

    2017-06-01

    Trap gun is an illegal, locally manufactured gun with a basic trip system used to hunt wild animals. The body of a 28-year-old man was found in the jungle in supine position with both legs apart. A trap gun was between the legs pointing toward the cranial side of the body. It had 2 free wires that were not connected together. There was no evidence of foul play.The body had a single-entry wound (2.5-cm diameter) in the anterior chest, with blackening, burning, and tattooing. Six metal particles and nylon clothing material were embedded into soft tissue. No exit wound was found. Toxicology analysis reported an alcohol level of 72 mg/dL. The cause of death was multiple shrapnel injury to the chest at close to intermediate range by a single discharge from a trap gun. Circumstance was concluded as suicide.Ballistic and firearm experts opined that an illegal, manually operated, battery-powered ignition device was used to ignite the gun powder. We report the first case of suicide by a modified trap gun in literature.

  10. Optimising the application of multiple-capture traps for invasive species management using spatial simulation.

    Science.gov (United States)

    Warburton, Bruce; Gormley, Andrew M

    2015-01-01

    Internationally, invasive vertebrate species pose a significant threat to biodiversity, agricultural production and human health. To manage these species a wide range of tools, including traps, are used. In New Zealand, brushtail possums (Trichosurus vulpecula), stoats (Mustela ermine), and ship rats (Rattus rattus) are invasive and there is an ongoing demand for cost-effective non-toxic methods for controlling these pests. Recently, traps with multiple-capture capability have been developed which, because they do not require regular operator-checking, are purported to be more cost-effective than traditional single-capture traps. However, when pest populations are being maintained at low densities (as is typical of orchestrated pest management programmes) it remains uncertain if it is more cost-effective to use fewer multiple-capture traps or more single-capture traps. To address this uncertainty, we used an individual-based spatially explicit modelling approach to determine the likely maximum animal-captures per trap, given stated pest densities and defined times traps are left between checks. In the simulation, single- or multiple-capture traps were spaced according to best practice pest-control guidelines. For possums with maintenance densities set at the lowest level (i.e. 0.5/ha), 98% of all simulated possums were captured with only a single capacity trap set at each site. When possum density was increased to moderate levels of 3/ha, having a capacity of three captures per trap caught 97% of all simulated possums. Results were similar for stoats, although only two potential captures per site were sufficient to capture 99% of simulated stoats. For rats, which were simulated at their typically higher densities, even a six-capture capacity per trap site only resulted in 80% kill. Depending on target species, prevailing density and extent of immigration, the most cost-effective strategy for pest control in New Zealand might be to deploy several single

  11. Two-baffle trap for macroparticles

    International Nuclear Information System (INIS)

    Aksyonov, D.S.

    2014-01-01

    In this work, properties of two-baffle macroparticle traps were investigated. These properties are needed for designing and optimization of vacuum arc plasma filters. The dependencies between trap geometry parameters and its ability to absorb macroparticles were found. Calculations made allow one to predict the behaviour of filtering abilities of separators containing such traps in their design. Recommendations regarding the use of two-baffle traps in filters of different builds are given

  12. Polarization-dependent atomic dipole traps behind a circular aperture for neutral-atom quantum computing

    International Nuclear Information System (INIS)

    Gillen-Christandl, Katharina; Copsey, Bert D.

    2011-01-01

    The neutral-atom quantum computing community has successfully implemented almost all necessary steps for constructing a neutral-atom quantum computer. We present computational results of a study aimed at solving the remaining problem of creating a quantum memory with individually addressable sites for quantum computing. The basis of this quantum memory is the diffraction pattern formed by laser light incident on a circular aperture. Very close to the aperture, the diffraction pattern has localized bright and dark spots that can serve as red-detuned or blue-detuned atomic dipole traps. These traps are suitable for quantum computing even for moderate laser powers. In particular, for moderate laser intensities (∼100 W/cm 2 ) and comparatively small detunings (∼1000-10 000 linewidths), trap depths of ∼1 mK and trap frequencies of several to tens of kilohertz are achieved. Our results indicate that these dipole traps can be moved by tilting the incident laser beams without significantly changing the trap properties. We also explored the polarization dependence of these dipole traps. We developed a code that calculates the trapping potential energy for any magnetic substate of any hyperfine ground state of any alkali-metal atom for any laser detuning much smaller than the fine-structure splitting for any given electric field distribution. We describe details of our calculations and include a summary of different notations and conventions for the reduced matrix element and how to convert it to SI units. We applied this code to these traps and found a method for bringing two traps together and apart controllably without expelling the atoms from the trap and without significant tunneling probability between the traps. This approach can be scaled up to a two-dimensional array of many pinholes, forming a quantum memory with single-site addressability, in which pairs of atoms can be brought together and apart for two-qubit gates for quantum computing.

  13. Cavity sideband cooling of trapped molecules

    NARCIS (Netherlands)

    Kowalewski, Markus; Morigi, Giovanna; Pinkse, Pepijn Willemszoon Harry; de Vivie-Riedle, Regina

    2011-01-01

    The efficiency of cavity sideband cooling of trapped molecules is theoretically investigated for the case in which the infrared transition between two rovibrational states is used as a cycling transition. The molecules are assumed to be trapped either by a radiofrequency or optical trapping

  14. An Open Standard for Camera Trap Data

    NARCIS (Netherlands)

    Forrester, Tavis; O'Brien, Tim; Fegraus, Eric; Jansen, P.A.; Palmer, Jonathan; Kays, Roland; Ahumada, Jorge; Stern, Beth; McShea, William

    2016-01-01

    Camera traps that capture photos of animals are a valuable tool for monitoring biodiversity. The use of camera traps is rapidly increasing and there is an urgent need for standardization to facilitate data management, reporting and data sharing. Here we offer the Camera Trap Metadata Standard as an

  15. Influence of trap location on the efficiency of trapping in dendrimers and regular hyperbranched polymers.

    Science.gov (United States)

    Lin, Yuan; Zhang, Zhongzhi

    2013-03-07

    The trapping process in polymer systems constitutes a fundamental mechanism for various other dynamical processes taking place in these systems. In this paper, we study the trapping problem in two representative polymer networks, Cayley trees and Vicsek fractals, which separately model dendrimers and regular hyperbranched polymers. Our goal is to explore the impact of trap location on the efficiency of trapping in these two important polymer systems, with the efficiency being measured by the average trapping time (ATT) that is the average of source-to-trap mean first-passage time over every staring point in the whole networks. For Cayley trees, we derive an exact analytic formula for the ATT to an arbitrary trap node, based on which we further obtain the explicit expression of ATT for the case that the trap is uniformly distributed. For Vicsek fractals, we provide the closed-form solution for ATT to a peripheral node farthest from the central node, as well as the numerical solutions for the case when the trap is placed on other nodes. Moreover, we derive the exact formula for the ATT corresponding to the trapping problem when the trap has a uniform distribution over all nodes. Our results show that the influence of trap location on the trapping efficiency is completely different for the two polymer networks. In Cayley trees, the leading scaling of ATT increases with the shortest distance between the trap and the central node, implying that trap's position has an essential impact on the trapping efficiency; while in Vicsek fractals, the effect of location of the trap is negligible, since the dominant behavior of ATT is identical, respective of the location where the trap is placed. We also present that for all cases of trapping problems being studied, the trapping process is more efficient in Cayley trees than in Vicsek fractals. We demonstrate that all differences related to trapping in the two polymer systems are rooted in their underlying topological structures.

  16. Fundamental physics in particle traps

    International Nuclear Information System (INIS)

    Quint, Wolfgang; Vogel, Manuel

    2014-01-01

    The individual topics are covered by leading experts in the respective fields of research. Provides readers with present theory and experiments in this field. A useful reference for researchers. This volume provides detailed insight into the field of precision spectroscopy and fundamental physics with particles confined in traps. It comprises experiments with electrons and positrons, protons and antiprotons, antimatter and highly charged ions, together with corresponding theoretical background. Such investigations represent stringent tests of quantum electrodynamics and the Standard model, antiparticle and antimatter research, test of fundamental symmetries, constants, and their possible variations with time and space. They are key to various aspects within metrology such as mass measurements and time standards, as well as promising to further developments in quantum information processing. The reader obtains a valuable source of information suited for beginners and experts with an interest in fundamental studies using particle traps.

  17. Trapping and spectroscopy of hydrogen

    International Nuclear Information System (INIS)

    Cesar, Claudio Lenz

    1997-01-01

    I review the results and techniques used by the MIT H↑ group to achieve a fractional resolution of 2 parts in 10 12 in the 1S-2S transition in hydrogen [Cesar, D. Fried, T. Killian, A. Polcyn, J. Sandberg, I.A. Yu, T. Greytak, D. Kleppner and J. Doyle, Two-photon spectroscopy of trapped atomic hydrogen, Phys. Rev. Lett. 77 (1996) 255.] With some improvements, this system should deliver 100 times higher resolution with an improved signal count rate getting us closer to an old advertised goal of a precision of 1 part in 10 18 . While these developments are very important for the proposed test of the CPT theorem through the comparison with anti-hydrogen, some of the techniques used with hydrogen are not applicable to anti-hydrogen and I discuss some difficulties and alternatives for the trapping and spectroscopy of anti-hydrogen

  18. Centrifugal trapping in the magnetotail

    Directory of Open Access Journals (Sweden)

    D. C. Delcourt

    Full Text Available Particles leaving the neutral sheet in the distant magnetotail at times display adiabatic trajectory sequences characterized by an inflection toward the equator and subsequent mirroring in its vicinity. We demonstrate that this low-latitude mirroring results primarily from a centrifugal deceleration due to the fast direction-changing E×B drift. This effect which we refer to as "centrifugal trapping" appears both in guiding centre and full particle treatments. It thus does not directly relate to nonadiabatic motion. However, pitch angle scattering due to nonadiabatic neutral sheet interaction does play a role in reducing the parallel speed of the particles. We show that centrifugal trapping is an important mechanism for the confinement of the slowest (typically below the equatorial E×B drift speed plasma sheet populations to the midplane vicinity.

  19. Centrifugal trapping in the magnetotail

    Directory of Open Access Journals (Sweden)

    D. C. Delcourt

    1995-03-01

    Full Text Available Particles leaving the neutral sheet in the distant magnetotail at times display adiabatic trajectory sequences characterized by an inflection toward the equator and subsequent mirroring in its vicinity. We demonstrate that this low-latitude mirroring results primarily from a centrifugal deceleration due to the fast direction-changing E×B drift. This effect which we refer to as "centrifugal trapping" appears both in guiding centre and full particle treatments. It thus does not directly relate to nonadiabatic motion. However, pitch angle scattering due to nonadiabatic neutral sheet interaction does play a role in reducing the parallel speed of the particles. We show that centrifugal trapping is an important mechanism for the confinement of the slowest (typically below the equatorial E×B drift speed plasma sheet populations to the midplane vicinity.

  20. Vapor trap for liquid metal

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, T

    1968-05-22

    In a pipe system which transfers liquid metal, inert gas (cover gas) is packed above the surface of the liquid metal to prevent oxidization of the liquid. If the metal vapor is contained in such cover gas, the circulating system of the cover gas is blocked due to condensation of liquid metal inside the system. The present invention relates to an improvement in vapor trap to remove the metal vapor from the cover gas. The trap consists of a cylindrical outer body, an inlet nozzle which is deeply inserted inside the outer body and has a number of holes to inject the cove gas into the body, metal mesh or steel wool which covers the exterior of the nozzle and on which the condensation of the metal gas takes place, and a heater wire hich is wound around the nozzle to prevent condensation of the metal vapor at the inner peripheral side of the mesh.

  1. Lift enhancement by trapped vortex

    Science.gov (United States)

    Rossow, Vernon J.

    1992-01-01

    The viewgraphs and discussion of lift enhancement by trapped vortex are provided. Efforts are continuously being made to find simple ways to convert wings of aircraft from an efficient cruise configuration to one that develops the high lift needed during landing and takeoff. The high-lift configurations studied here consist of conventional airfoils with a trapped vortex over the upper surface. The vortex is trapped by one or two vertical fences that serve as barriers to the oncoming stream and as reflection planes for the vortex and the sink that form a separation bubble on top of the airfoil. Since the full three-dimensional unsteady flow problem over the wing of an aircraft is so complicated that it is hard to get an understanding of the principles that govern the vortex trapping process, the analysis is restricted here to the flow field illustrated in the first slide. It is assumed that the flow field between the two end plates approximates a streamwise strip of the flow over a wing. The flow between the endplates and about the airfoil consists of a spanwise vortex located between the suction orifices in the endplates. The spanwise fence or spoiler located near the nose of the airfoil serves to form a separated flow region and a shear layer. The vorticity in the shear layer is concentrated into the vortex by withdrawal of fluid at the suction orifices. As the strength of the vortex increases with time, it eventually dominates the flow in the separated region so that a shear or vertical layer is no longer shed from the tip of the fence. At that point, the vortex strength is fixed and its location is such that all of the velocity contributions at its center sum to zero thereby making it an equilibrium point for the vortex. The results of a theoretical analysis of such an idealized flow field are described.

  2. Entrapment bias of arthropods in Miocene amber revealed by trapping experiments in a tropical forest in Chiapas, Mexico.

    Science.gov (United States)

    Solórzano Kraemer, Mónica M; Kraemer, Mónica M Solórzano; Kraemer, Atahualpa S; Stebner, Frauke; Bickel, Daniel J; Rust, Jes

    2015-01-01

    All entomological traps have a capturing bias, and amber, viewed as a trap, is no exception. Thus the fauna trapped in amber does not represent the total existing fauna of the former amber forest, rather the fauna living in and around the resin producing tree. In this paper we compare arthropods from a forest very similar to the reconstruction of the Miocene Mexican amber forest, and determine the bias of different trapping methods, including amber. We also show, using cluster analyses, measurements of the trapped arthropods, and guild distribution, that the amber trap is a complex entomological trap not comparable with a single artificial trap. At the order level, the most similar trap to amber is the sticky trap. However, in the case of Diptera, at the family level, the Malaise trap is also very similar to amber. Amber captured a higher diversity of arthropods than each of the artificial traps, based on our study of Mexican amber from the Middle Miocene, a time of climate optimum, where temperature and humidity were probably higher than in modern Central America. We conclude that the size bias is qualitatively independent of the kind of trap for non-extreme values. We suggest that frequent specimens in amber were not necessarily the most frequent arthropods in the former amber forest. Selected taxa with higher numbers of specimens appear in amber because of their ecology and behavior, usually closely related with a tree-inhabiting life. Finally, changes of diversity from the Middle Miocene to Recent time in Central and South America can be analyzed by comparing the rich amber faunas from Mexico and the Dominican Republic with the fauna trapped using sticky and Malaise traps in Central America.

  3. Antihydrogen Formation, Dynamics and Trapping

    CERN Document Server

    Butler, Eoin; Charlton, Michael

    2011-01-01

    Antihydrogen, the simplest pure-antimatter atomic system, holds the promise of direct tests of matter-antimatter equivalence and CPT invariance, two of the outstanding unanswered questions in modern physics. Antihydrogen is now routinely produced in charged-particle traps through the combination of plasmas of antiprotons and positrons, but the atoms escape and are destroyed in a minuscule fraction of a second. The focus of this work is the production of a sample of cold antihydrogen atoms in a magnetic atom trap. This poses an extreme challenge, because the state-of-the-art atom traps are only approximately 0.5 K deep for ground-state antihydrogen atoms, much shallower than the energies of particles stored in the plasmas. This thesis will outline the main parts of the ALPHA experiment, with an overview of the important physical processes at work. Antihydrogen production techniques will be described, and an analysis of the spatial annihilation distribution to give indications of the temperature and binding ene...

  4. Laser tweezers: spectroscopy of optically trapped micron-sized particles

    Energy Technology Data Exchange (ETDEWEB)

    Kerr, K.M.; Livett, M.K.; Nugent, K.W. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Information is often obtained about biological systems by analysis of single cells in the system. The optimum conditions for this analysis are when the cells are living and in their natural surroundings as they will be performing their normal functions and interactions. Analysis of cells can be difficult due to their mobility. Laser tweezing is a non contact method that can be employed to overcome this problem and provides a powerful tool in the analysis of functions and interactions at single cell level. In this investigation Raman spectra of a molecule of {beta} - carotene, dissolved in microdroplets of oil was obtained. The droplets were trapped using Nd-YAG beam and a low intensity Ar{sup +} beam was used to analyse the trapped particles. 2 refs., 5 figs.

  5. Laser tweezers: spectroscopy of optically trapped micron-sized particles

    Energy Technology Data Exchange (ETDEWEB)

    Kerr, K M; Livett, M K; Nugent, K W [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Information is often obtained about biological systems by analysis of single cells in the system. The optimum conditions for this analysis are when the cells are living and in their natural surroundings as they will be performing their normal functions and interactions. Analysis of cells can be difficult due to their mobility. Laser tweezing is a non contact method that can be employed to overcome this problem and provides a powerful tool in the analysis of functions and interactions at single cell level. In this investigation Raman spectra of a molecule of {beta} - carotene, dissolved in microdroplets of oil was obtained. The droplets were trapped using Nd-YAG beam and a low intensity Ar{sup +} beam was used to analyse the trapped particles. 2 refs., 5 figs.

  6. Nonadiabatic transitions in electrostatically trapped ammonia molecules

    International Nuclear Information System (INIS)

    Kirste, Moritz; Schnell, Melanie; Meijer, Gerard; Sartakov, Boris G.

    2009-01-01

    Nonadiabatic transitions are known to be major loss channels for atoms in magnetic traps but have thus far not been experimentally reported upon for trapped molecules. We have observed and quantified losses due to nonadiabatic transitions for three isotopologues of ammonia in electrostatic traps by comparing the trapping times in traps with a zero and a nonzero electric field at the center. Nonadiabatic transitions are seen to dominate the overall loss rate even for the present samples that are at relatively high temperatures of 30 mK. It is anticipated that losses due to nonadiabatic transitions in electric fields are omnipresent in ongoing experiments on cold molecules.

  7. Sognenavne, Albertslund Kommune (3 artikler). trap.dk

    DEFF Research Database (Denmark)

    Kællerød, Lars-Jakob Harding

    2019-01-01

    Artikler til Trap Danmarks netpublikation trap.dk Sognenavnene Herstedvester, Herstedøster og Opstandelseskirkens Sogn......Artikler til Trap Danmarks netpublikation trap.dk Sognenavnene Herstedvester, Herstedøster og Opstandelseskirkens Sogn...

  8. A Penning trap for advanced studies with particles in extreme laser fields

    International Nuclear Information System (INIS)

    Vogel, M.; Quint, W.; Paulus, G.G.; Stöhlker, Th.

    2012-01-01

    We present a Penning trap as a tool for advanced studies of particles in extreme laser fields. Particularly, trap-specific manipulation techniques allow control over the confined particles’ localization and spatial density by use of trap electrodes as ‘electrostatic tweezers’ and by application of a ‘rotating wall’, respectively. It is thereby possible to select and prepare well-defined ion ensembles and to optimize the laser–particle interaction. Non-destructive detection of reaction educts and products with up to single-ion sensitivity supports advanced studies by maintaining the products for further studies at extended confinement times of minutes and above. The trap features endcaps with conical openings for applications with strongly focused lasers. We show that such a modification of a cylindrical trap is possible while harmonicity and tunability are maintained.

  9. A Penning trap for advanced studies with particles in extreme laser fields

    Science.gov (United States)

    Vogel, M.; Quint, W.; Paulus, G. G.; Stöhlker, Th.

    2012-08-01

    We present a Penning trap as a tool for advanced studies of particles in extreme laser fields. Particularly, trap-specific manipulation techniques allow control over the confined particles' localization and spatial density by use of trap electrodes as 'electrostatic tweezers' and by application of a 'rotating wall', respectively. It is thereby possible to select and prepare well-defined ion ensembles and to optimize the laser-particle interaction. Non-destructive detection of reaction educts and products with up to single-ion sensitivity supports advanced studies by maintaining the products for further studies at extended confinement times of minutes and above. The trap features endcaps with conical openings for applications with strongly focused lasers. We show that such a modification of a cylindrical trap is possible while harmonicity and tunability are maintained.

  10. Algae commensal community in Genlisea traps

    Directory of Open Access Journals (Sweden)

    Konrad Wołowski

    2011-01-01

    Full Text Available The community of algae occurring in Genlisea traps and on the external traps surface in laboratory conditions were studied. A total of 29 taxa were found inside the traps, with abundant diatoms, green algae (Chlamydophyceae and four morphotypes of chrysophytes stomatocysts. One morphotype is described as new for science. There are two ways of algae getting into Genlisea traps. The majority of those recorded inside the traps, are mobile; swimming freely by flagella or moving exuding mucilage like diatoms being ablate to colonize the traps themselves. Another possibility is transport of algae by invertebrates such as mites and crustaceans. In any case algae in the Genlisea traps come from the surrounding environment. Two dominant groups of algae (Chladymonas div. and diatoms in the trap environment, show ability to hydrolyze phosphomonoseters. We suggest that algae in carnivorous plant traps can compete with plant (host for organic phosphate (phosphomonoseters. From the spectrum and ecological requirements of algal species found in the traps, environment inside the traps seems to be acidic. However, further studies are needed to test the relations between algae and carnivorous plants both in laboratory conditions and in the natural environment. All the reported taxa are described briefly and documented with 74 LM and SEM micrographs.

  11. An Introduction to Wave-Trapping in Supergranulation

    International Nuclear Information System (INIS)

    Allen, W; Hill, F

    2011-01-01

    This paper is an introduction to modelling waves trapped in a supergranular cell. The supergranular cell is generalized to the form of a hexagon with a cylinder inscribed within its boundaries. A cylindrical wave equation is implemented and solved and we account for the edges of the hexagon through boundary conditions. Plots are created of the solution and will serve as a test as to whether the model reflects actual wave conditions inside a single supergranular cell.

  12. Ion traps fabricated in a CMOS foundry

    Energy Technology Data Exchange (ETDEWEB)

    Mehta, K. K.; Ram, R. J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Eltony, A. M.; Chuang, I. L. [Center for Ultracold Atoms, Research Laboratory of Electronics and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bruzewicz, C. D.; Sage, J. M., E-mail: jsage@ll.mit.edu; Chiaverini, J., E-mail: john.chiaverini@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

    2014-07-28

    We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

  13. Trapping Dust to Form Planets

    Science.gov (United States)

    Kohler, Susanna

    2017-10-01

    Growing a planet from a dust grain is hard work! A new study explores how vortices in protoplanetary disks can assist this process.When Dust Growth FailsTop: ALMA image of the protoplanetary disk of V1247 Orionis, with different emission components labeled. Bottom: Synthetic image constructed from the best-fit model. [Kraus et al. 2017]Gradual accretion onto a seed particle seems like a reasonable way to grow a planet from a grain of dust; after all, planetary embryos orbit within dusty protoplanetary disks, which provides them with plenty of fuel to accrete so they can grow. Theres a challenge to this picture, though: the radial drift problem.The radial drift problem acknowledges that, as growing dust grains orbit within the disk, the drag force on them continues to grow as well. For large enough dust grains perhaps around 1 millimeter the drag force will cause the grains orbits to decay, and the particles drift into the star before they are able to grow into planetesimals and planets.A Close-Up Look with ALMASo how do we overcome the radial drift problem in order to form planets? A commonly proposed mechanism is dust trapping, in which long-lived vortices in the disk trap the dust particles, preventing them from falling inwards. This allows the particles to persist for millions of years long enough to grow beyond the radial drift barrier.Observationally, these dust-trapping vortices should have signatures: we would expect to see, at millimeter wavelengths, specific bright, asymmetric structures where the trapping occurs in protoplanetary disks. Such disk structures have been difficult to spot with past instrumentation, but the Atacama Large Millimeter/submillimeter Array (ALMA) has made some new observations of the disk V1247 Orionis that might be just what were looking for.Schematic of the authors model for the disk of V1247 Orionis. [Kraus et al. 2017]Trapped in a Vortex?ALMAs observations of V1247 Orionis are reported by a team of scientists led by Stefan

  14. Trapped

    OpenAIRE

    Storvik, Pamela

    2012-01-01

    This study explores how the Muslim Sunni Women in the city of Tripoli- Lebanon perceive the the inequity in the rights of women in terms of those of men within the Personal Status codes practiced today in the Sunni Muslim Sharīʻa Courts in the country. Lebanese women and men in general are subject to an imbalanced patronage as a result of the patriarchal conditions dominating the Lebanese society and its various communities. This project further explores the factors that have led to the failu...

  15. Photoacoustic absorption spectroscopy of single optically trapped aerosol droplets

    Science.gov (United States)

    Covert, Paul A.; Cremer, Johannes W.; Signorell, Ruth

    2017-08-01

    Photoacoustics have been widely used for the study of aerosol optical properties. To date, these studies have been performed on particle ensembles, with minimal ability to control for particle size. Here, we present our singleparticle photoacoustic spectrometer. The sensitivity and stability of the instrument is discussed, along with results from two experiments that illustrate the unique capabilities of this instrument. In the first experiment, we present a measurement of the particle size-dependence of the photoacoustic response. Our results confirm previous models of aerosol photoacoustics that had yet to be experimentally tested. The second set of results reveals a size-dependence of photochemical processes within aerosols that results from the nanofocusing of light within individual droplets.

  16. The range of attraction for light traps catching Culicoides biting midges (Diptera: Ceratopogonidae).

    Science.gov (United States)

    Kirkeby, Carsten; Græsbøll, Kaare; Stockmarr, Anders; Christiansen, Lasse E; Bødker, René

    2013-03-15

    Culicoides are vectors of e.g. bluetongue virus and Schmallenberg virus in northern Europe. Light trapping is an important tool for detecting the presence and quantifying the abundance of vectors in the field. Until now, few studies have investigated the range of attraction of light traps. Here we test a previously described mathematical model (Model I) and two novel models for the attraction of vectors to light traps (Model II and III). In Model I, Culicoides fly to the nearest trap from within a fixed range of attraction. In Model II Culicoides fly towards areas with greater light intensity, and in Model III Culicoides evaluate light sources in the field of view and fly towards the strongest. Model II and III incorporated the directionally dependent light field created around light traps with fluorescent light tubes. All three models were fitted to light trap collections obtained from two novel experimental setups in the field where traps were placed in different configurations. Results showed that overlapping ranges of attraction of neighboring traps extended the shared range of attraction. Model I did not fit data from any of the experimental setups. Model II could only fit data from one of the setups, while Model III fitted data from both experimental setups. The model with the best fit, Model III, indicates that Culicoides continuously evaluate the light source direction and intensity. The maximum range of attraction of a single 4W CDC light trap was estimated to be approximately 15.25 meters. The attraction towards light traps is different from the attraction to host animals and thus light trap catches may not represent the vector species and numbers attracted to hosts.

  17. Trapping a Knot into Tight Conformations by Intra-Chain Repulsions

    Directory of Open Access Journals (Sweden)

    Liang Dai

    2017-02-01

    Full Text Available Knots can occur in biopolymers such as DNA and peptides. In our previous study, we systematically investigated the effects of intra-chain interactions on knots and found that long-range repulsions can surprisingly tighten knots. Here, we use this knowledge to trap a knot into tight conformations in Langevin dynamics simulations. By trapping, we mean that the free energy landscape with respect to the knot size exhibits a potential well around a small knot size in the presence of long-range repulsions, and this potential can well lead to long-lived tight knots when its depth is comparable to or larger than thermal energy. We tune the strength of intra-chain repulsion such that a knot is weakly trapped. Driven by thermal fluctuations, the knot can escape from the trap and is then re-trapped. We find that the knot switches between tight and loose conformations—referred to as “knot breathing”. We use a Yukawa potential to model screened electrostatic interactions to explore the relevance of knot trapping and breathing in charged biopolymers. We determine the minimal screened length and the minimal strength of repulsion for knot trapping. We find that Coulomb-induced knot trapping is possible to occur in single-stranded DNA and peptides for normal ionic strengths.

  18. Photoionization and cold collision studies using trapped atoms

    International Nuclear Information System (INIS)

    Gould, P.L.

    1996-01-01

    The authors have used laser cooling and trapping techniques to investigate photoionization and cold collisions. With laser-trapped Rb, they have measured the photoionization cross section from the first excited (5P) level by observing the photoionization-induced loss rate of neutral atoms from the trap. This technique has the advantage that it directly measures the photoionization rate per atom. Knowing the ionizing laser intensity and the excited-state fraction, the measured loss rate gives the absolute cross section. Using this technique, the Rb 5P photoionization cross section at ∼400 nm has been determined with an uncertainty of 9%. The authors are currently attempting to extend this method to the 5D level. Using time-ordered pulses of diode-laser light (similar to the STIRAP technique), they have performed very efficient two-photon excitation of trapped Rb atoms to 5D. Finally, they will present results from a recent collaboration which combines measurements form conventional molecular spectroscopy (single photon and double resonance) with photoassociation collisions of ultracold Na atoms to yield a precise (≤1 ppm) value for the dissociation energy of the X Σ g+ ground state of the Na 2 molecule

  19. Microfluidic pressure sensing using trapped air compression.

    Science.gov (United States)

    Srivastava, Nimisha; Burns, Mark A

    2007-05-01

    We have developed a microfluidic method for measuring the fluid pressure head experienced at any location inside a microchannel. The principal component is a microfabricated sealed chamber with a single inlet and no exit; the entrance to the single inlet is positioned at the location where pressure is to be measured. The pressure measurement is then based on monitoring the movement of a liquid-air interface as it compresses air trapped inside the microfabricated sealed chamber and calculating the pressure using the ideal gas law. The method has been used to measure the pressure of the air stream and continuous liquid flow inside microfluidic channels (d approximately 50 microm). Further, a pressure drop has also been measured using multiple microfabricated sealed chambers. For air pressure, a resolution of 700 Pa within a full-scale range of 700-100 kPa was obtained. For liquids, pressure drops as low as 70 Pa were obtained in an operating range from 70 Pa to 10 kPa. Since the method primarily uses a microfluidic sealed chamber, it does not require additional fabrication steps and may easily be incorporated in several lab-on-a-chip fluidic applications for laminar as well as turbulent flow conditions.

  20. Discriminating between antihydrogen and mirror-trapped antiprotons in a minimum-B trap

    CERN Document Server

    Amole, C; Ashkezari, M D; Baquero-Ruiz, M; Bertsche, W; Butler, E; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Humphries, A J; Hydomako, R; Kurchaninov, L; Jonsell, S; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Robicheaux, F; Sarid, E; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S

    2012-01-01

    Recently, antihydrogen atoms were trapped at CERN in a magnetic minimum (minimum-B) trap formed by superconducting octupole and mirror magnet coils. The trapped antiatoms were detected by rapidly turning off these magnets, thereby eliminating the magnetic minimum and releasing any antiatoms contained in the trap. Once released, these antiatoms quickly hit the trap wall, whereupon the positrons and antiprotons in the antiatoms annihilated. The antiproton annihilations produce easily detected signals; we used these signals to prove that we trapped antihydrogen. However, our technique could be confounded by mirror-trapped antiprotons, which would produce seemingly-identical annihilation signals upon hitting the trap wall. In this paper, we discuss possible sources of mirror-trapped antiprotons and show that antihydrogen and antiprotons can be readily distinguished, often with the aid of applied electric fields, by analyzing the annihilation locations and times. We further discuss the general properties of antipr...