Low-energy neutron-induced single-event upsets in static random access memory

International Nuclear Information System (INIS)

Guo Xiaoqiang; Guo Hongxia; Wang Guizhen; Ling Dongsheng; Chen Wei; Bai Xiaoyan; Yang Shanchao; Liu Yan

2009-01-01

The visual analysis method of data process was provided for neutron-induced single-event upset(SEU) in static random access memory(SRAM). The SEU effects of six CMOS SRAMs with different feature size(from 0.13 μm to 1.50 μm) were studied. The SEU experiments were performed using the neutron radiation environment at Xi'an pulsed reactor. And the dependence of low-energy neutron-induced SEU cross section on SRAM's feature size was given. The results indicate that the decreased critical charge is the dominant factor for the increase of single event effect sensitivity of SRAM devices with decreased feature size. Small-sized SRAM devices are more sensitive than large-sized ones to single event effect induced by low-energy neutrons. (authors)

Causal relationships between solar proton events and single event upsets for communication satellites

Science.gov (United States)

Lohmeyer, W. Q.; Cahoy, K.; Liu, Shiyang

In this work, we analyze a historical archive of single event upsets (SEUs) maintained by Inmarsat, one of the world's leading providers of global mobile satellite communications services. Inmarsat has operated its geostationary communication satellites and collected extensive satellite anomaly and telemetry data since 1990. Over the course of the past twenty years, the satellites have experienced more than 226 single event upsets (SEUs), a catch-all term for anomalies that occur in a satellite's electronics such as bit-flips, trips in power supplies, and memory changes in attitude control systems. While SEUs are seemingly random and difficult to predict, we correlate their occurrences to space weather phenomena, and specifically show correlations between SEUs and solar proton events (SPEs). SPEs are highly energetic protons that originate from solar coronal mass ejections (CMEs). It is thought that when these particles impact geostationary (GEO) satellites they can cause SEUs as well as solar array degradation. We calculate the associated statistical correlations that each SEU occurs within one day, one week, two weeks, and one month of 10 MeV SPEs between 10 - 10,000 particle flux units (pfu). However, we find that SPEs are most prevalent at solar maximum and that the SEUs on Inmarsat's satellites occur out of phase with the solar maximum. Ultimately, this suggests that SPEs are not the primary cause of the Inmarsat SEUs. A better understanding of the causal relationship between SPEs and SEUs will help the satellite communications industry develop component and operational space weather mitigation techniques as well as help the space weather community to refine radiation models.

Neutron-induced single event upsets in static RAMS observed at 10 km flight altitude

International Nuclear Information System (INIS)

Olsen, J.; Becher, P.E.; Fynbo, P.B.; Raaby, P. Schultz, J.

1993-01-01

Neutron induced single event upsets (SEUs) in static memory devices (SRAMs) have so far been seen only in laboratory environments. The authors report observations of 14 neutron induced SEUs at commercial aircraft flight altitudes as well. The observed SEU rate at 10 km flight altitude based on exposure of 160 standard 256 Kbit CMOS SRAMs is 4.8 · 10 -8 upsets/bit/day. In the laboratory 117 SRAMs of two different brands were irradiated with fast neutrons from a Pu-Be source. A total of 176 SEUs have been observed, among these are two SEU pairs. The upset rates from the laboratory tests are compared to those found in the airborne SRAMS

Single Event Upset Energy Dependence In a Buck-Converter Power Supply Design

CERN Document Server

Drake, G; The ATLAS collaboration; Gopalakrishnan, A; Mahadik, S; Mellado, B; Proudfoot, J; Reed, R; Senthilkumaran, A; Stanek, R

2012-01-01

We present a study of Single Event Upsets (SEU) performed on a commercial pulse-width modulator controller chip for switching power supplies. We performed tests to study the probability of an SEU occurring as a function of incident particle (hadron) energy. We discuss the performance of the circuit, and present a solution using external circuitry to effectively eliminate the effect.

Microbeam mapping of single event latchups and single event upsets in CMOS SRAMs

International Nuclear Information System (INIS)

Barak, J.; Adler, E.; Fischer, B.E.; Schloegl, M.; Metzger, S.

1998-01-01

The first simultaneous microbeam mapping of single event upset (SEU) and latchup (SEL) in the CMOS RAM HM65162 is presented. The authors found that the shapes of the sensitive areas depend on V DD , on the ions being used and on the site on the chip being hit by the ion. In particular, they found SEL sensitive sites close to the main power supply lines between the memory-bit-arrays by detecting the accompanying current surge. All these SELs were also accompanied by bit-flips elsewhere in the memory (which they call indirect SEUs in contrast to the well known SEUs induced in the hit memory cell only). When identical SEL sensitive sites were hit farther away from the supply lines only indirect SEL sensitive sites could be detected. They interpret these events as latent latchups in contrast to the classical ones detected by their induced current surge. These latent SELs were probably decoupled from the main supply lines by the high resistivity of the local supply lines

Single-event phenomena on recent semiconductor devices. Charge-type multiple-bit upsets in high integrated memories

International Nuclear Information System (INIS)

Makihara, Akiko; Shindou, Hiroyuki; Nemoto, Norio; Kuboyama, Satoshi; Matsuda, Sumio; Ohshima, Takeshi; Hirao, Toshio; Itoh, Hisayoshi

2001-01-01

High integrated memories are used in solid state data recorder (SSDR) of the satellite for accumulating observation data. Single event upset phenomena which turn over an accumulated data in the memory cells are caused by heavy ion incidence. Studies on single-bit upset and multiple-bit upset phenomena in the high integrated memory cells are in progress recently. 16 Mbit DRAM (Dynamic Random Access Memories) and 64 Mbit DRAM are irradiated by heavy ion species, such as iodine, bromine and nickel, in comparison with the irradiation damage in the cosmic environment. Data written on the memory devices are read out after the irradiation. The memory cells in three kinds of states, all of charged state, all of discharged state, and an alternative state of charge and discharge, are irradiated for sorting out error modes caused by heavy ion incidence. The soft error in a single memory cells is known as a turn over from charged state to discharged state. Electrons in electron-hole pair generated by heavy ion incidence are captured in a diffusion region between capacitor electrodes of semiconductor. The charged states in the capacitor electrodes before the irradiation are neutralized and changed to the discharged states. According to high integration of the memories, many of the cells are affected by a single ion incidence. The multiple-bit upsets, however, are generated in the memory cells of discharged state before the irradiation, also. The charge-type multiple-bit upsets is considered as that error data are written on the DRAM during refresh cycle of a sense-up circuit and a pre-charge circuit which control the DRAM. (M. Suetake)

Single Event Upset Energy Dependence In a Buck-Converter Power Supply Design

CERN Document Server

Drake, G; The ATLAS collaboration; De Lurgio, P; Stanek, R; Mellado, B; Gopalakrishnan, A; Mahadik, S; Reed, R; Senthilkumaran, A

2012-01-01

We present a study of Single Event Upsets performed on a commercial pulse-width modulator controller chip that we are using for a switching power supply design for the Atlas Tile Calorimeter at the LHC. We performed tests to study the probability of an SEU occurring as a function of incident particle (hadron) energy. We compare the results with prediction from theory. We discuss the performance of the circuit, and perform an analysis using Bendel parameters. We also present a solution that we found using external circuitry that eliminates the effect.

Single event upsets in semiconductor devices induced by highly ionising particles.

Science.gov (United States)

Sannikov, A V

2004-01-01

A new model of single event upsets (SEUs), created in memory cells by heavy ions and high energy hadrons, has been developed. The model takes into account the spatial distribution of charge collection efficiency over the cell area not considered in previous approaches. Three-dimensional calculations made by the HADRON code have shown good agreement with experimental data for the energy dependence of proton SEU cross sections, sensitive depths and other SEU observables. The model is promising for prediction of SEU rates for memory chips exposed in space and in high-energy experiments as well as for the development of a high-energy neutron dosemeter based on the SEU effect.

Single event upsets calculated from new ENDF/B-VI proton and neutron data up to 150 MeV

International Nuclear Information System (INIS)

Chadwick, M.B.

1999-01-01

Single-event upsets (SEU) in microelectronics are calculated from newly-developed silicon nuclear reaction recoil data that extend up to 150 MeV, for incident protons and neutrons. Calculated SEU cross sections are compared with measured data

Single event upset susceptibilities of latchup immune CMOS process programmable gate arrays

Science.gov (United States)

Koga, R.; Crain, W. R.; Crawford, K. B.; Hansel, S. J.; Lau, D. D.; Tsubota, T. K.

Single event upsets (SEU) and latchup susceptibilities of complementary metal oxide semiconductor programmable gate arrays (CMOS PPGA's) were measured at the Lawrence Berkeley Laboratory 88-in. cyclotron facility with Xe (603 MeV), Cu (290 MeV), and Ar (180 MeV) ion beams. The PPGA devices tested were those which may be used in space. Most of the SEU measurements were taken with a newly constructed tester called the Bus Access Storage and Comparison System (BASACS) operating via a Macintosh II computer. When BASACS finds that an output does not match a prerecorded pattern, the state of all outputs, position in the test cycle, and other necessary information is transmitted and stored in the Macintosh. The upset rate was kept between 1 and 3 per second. After a sufficient number of errors are stored, the test is stopped and the total fluence of particles and total errors are recorded. The device power supply current was closely monitored to check for occurrence of latchup. Results of the tests are presented, indicating that some of the PPGA's are good candidates for selected space applications.

Single event upset threshold estimation based on local laser irradiation

International Nuclear Information System (INIS)

Chumakov, A.I.; Egorov, A.N.; Mavritsky, O.B.; Yanenko, A.V.

1999-01-01

An approach for estimation of ion-induced SEU threshold based on local laser irradiation is presented. Comparative experiment and software simulation research were performed at various pulse duration and spot size. Correlation of single event threshold LET to upset threshold laser energy under local irradiation was found. The computer analysis of local laser irradiation of IC structures was developed for SEU threshold LET estimation. The correlation of local laser threshold energy with SEU threshold LET was shown. Two estimation techniques were suggested. The first one is based on the determination of local laser threshold dose taking into account the relation of sensitive area to local irradiated area. The second technique uses the photocurrent peak value instead of this relation. The agreement between the predicted and experimental results demonstrates the applicability of this approach. (authors)

Application of RADSAFE to Model Single Event Upset Response of a 0.25 micron CMOS SRAM

Science.gov (United States)

Warren, Kevin M.; Weller, Robert A.; Sierawski, Brian; Reed, Robert A.; Mendenhall, Marcus H.; Schrimpf, Ronald D.; Massengill, Lloyd; Porter, Mark; Wilkerson, Jeff; LaBel, Kenneth A.;

Calculation of neutron-induced single-event upset cross sections for semiconductor memory devices

International Nuclear Information System (INIS)

Ikeuchi, Taketo; Watanabe, Yukinobu; Nakashima, Hideki; Sun, Weili

2001-01-01

Neutron-induced single-event upset (SEU) cross sections for semiconductor memory devices are calculated by the Burst Generation Rate (BGR) method using LA150 data and QMD calculation in the neutron energy range between 20 MeV and 10 GeV. The calculated results are compared with the measured SEU cross sections for energies up to 160 MeV, and the validity of the calculation method and the nuclear data used is verified. The kind of reaction products and the neutron energy range that have the most effect on SEU are discussed. (author)

Characterization of System Level Single Event Upset (SEU) Responses using SEU Data, Classical Reliability Models, and Space Environment Data

Science.gov (United States)

Berg, Melanie; Label, Kenneth; Campola, Michael; Xapsos, Michael

2017-01-01

We propose a method for the application of single event upset (SEU) data towards the analysis of complex systems using transformed reliability models (from the time domain to the particle fluence domain) and space environment data.

Acquisition and classification of static single-event upset cross section for SRAM-based FPGAs

International Nuclear Information System (INIS)

Yao Zhibin; Fan Ruyu; Guo Hongxia; Wang Zhongming; He Baoping; Zhang Fengqi; Zhang Keying

2011-01-01

In order to evaluate single event upsets (SEUs) in SRAM-based FPGAs and to find the sensitive resource in configuration memory, a heavy ions irradiation experiment was carried out on a Xilinx FPGAs device XCV300PQ240. The experiment was conducted to gain the static SEU cross section and classify the SEUs in configurations memory according to different resource uses. The results demonstrate that the inter-memory of SRAM-based FPGAs is extremely sensitive to heavy-ion-induced SEUs. The LUT and routing resources are the main source of SEUs in the configuration memory, which covers more than 97.46% of the total upsets. The SEU sensitivity of various resources is different. The IOB control bit and LUT elements are more sensitive,and more attention should be paid to the LUT elements in radiation hardening,which account for a quite large proportion of the configuration memory. (authors)

Analyzing Test-As-You-Fly Single Event Upset (SEU) Responses using SEU Data, Classical Reliability Models, and Space Environment Data

Science.gov (United States)

Berg, Melanie; Label, Kenneth; Campola, Michael; Xapsos, Michael

2017-01-01

We propose a method for the application of single event upset (SEU) data towards the analysis of complex systems using transformed reliability models (from the time domain to the particle fluence domain) and space environment data.

Estimation of the LET threshold of single event upset of microelectronics in experiments with Cf-252

International Nuclear Information System (INIS)

Kuznetsov, N.V.; Nymmik, R.A.

1996-01-01

A method is proposed for analyzing single event upsets (SEU) in large scale integration circuits of random access memory (RAM) when exposed to Cf-252 fission fragments. The method makes is possible to find the RAM linear energy transfer (LET) threshold to be used for estimations of RAM SEU rates in space. The method is illustrated by analyzing experimental data for the 2 x 8 kbit CMOS/bulk RAM. (author)

Evaluation of single-event upset tolerance on 64Mbit DRAM and 16Mbit DRAM

Energy Technology Data Exchange (ETDEWEB)

Nemoto, N; Shindou, H; Matsuzaki, K; Akutsu, T; Matsuda, S [National Space Development Agency of Japan, Tokyo (Japan); Hirao, T; Itoh, H; Nashiyama, I

1997-11-01

In recent years, reduction in the mission cost is regarded as one of the most important matters, and thus much effort has been made to reduce the cost of electronic components used in spacecrafts without diminishing their performance. On this policy, there has been a growing interest in space application of commercial devices such as highly integrated memory ICs because of low prices and high performance of such devices. To ensure success in this application, it is indispensable to investigate radiation effects, e.g., single-event and total-dose effects, on commercial devices precisely. In the present study, we have evaluated single-event upset (SEU) tolerance for 1Mbit, 4Mbit SRAM and 16Mbit, 64Mbit DRAM by irradiation of high energy heavy ions such as 175MeV-Ar{sup 8+} and 450MeV-Xe{sup 23+}. We observed these SEU tolerance in space. (author)

Implications of the spatial dependence of the single-event-upset threshold in SRAMs measured with a pulsed laser

International Nuclear Information System (INIS)

Buchner, S.; Langworthy, J.B.; Stapor, W.J.; Campbell, A.B.; Rivet, S.

1994-01-01

Pulsed laser light was used to measure single event upset (SEU) thresholds for a large number of memory cells in both CMOS and bipolar SRAMs. Results showed that small variations in intercell upset threshold could not explain the gradual rise in the curve of cross section versus linear energy transfer (LET). The memory cells exhibited greater intracell variations implying that the charge collection efficiency within a memory cell varies spatially and contributes substantially to the shape of the curve of cross section versus LET. The results also suggest that the pulsed laser can be used for hardness-assurance measurements on devices with sensitive areas larger than the diameter of the laser beam

Influence of edge effects on single event upset susceptibility of SOI SRAMs

International Nuclear Information System (INIS)

Gu, Song; Liu, Jie; Zhao, Fazhan; Zhang, Zhangang; Bi, Jinshun; Geng, Chao; Hou, Mingdong; Liu, Gang; Liu, Tianqi; Xi, Kai

2015-01-01

An experimental investigation of the single event upset (SEU) susceptibility for heavy ions at tilted incidence was performed. The differences of SEU cross-sections between tilted incidence and normal incidence at equivalent effective linear energy transfer were 21% and 57% for the silicon-on-insulator (SOI) static random access memories (SRAMs) of 0.5 μm and 0.18 μm feature size, respectively. The difference of SEU cross-section raised dramatically with increasing tilt angle for SOI SRAM of deep-submicron technology. The result of CRÈME-MC simulation for tilted irradiation of the sensitive volume indicates that the energy deposition spectrum has a substantial tail extending into the low energy region. The experimental results show that the influence of edge effects on SEU susceptibility cannot be ignored in particular with device scaling down

A simple analytical model of single-event upsets in bulk CMOS

Energy Technology Data Exchange (ETDEWEB)

Sogoyan, Armen V.; Chumakov, Alexander I.; Smolin, Anatoly A., E-mail: aasmol@spels.ru; Ulanova, Anastasia V.; Boruzdina, Anna B.

2017-06-01

During the last decade, multiple new methods of single event upset (SEU) rate prediction for aerospace systems have been proposed. Despite different models and approaches being employed in these methods, they all share relatively high usage complexity and require information about a device that is not always available to an end user. This work presents an alternative approach to estimating SEU cross-section as a function of linear energy transfer (LET) that can be further developed into a method of SEU rate prediction. The goal is to propose a simple, yet physics-based, approach with just two parameters that can be used even in situations when only a process node of the device is known. The developed approach is based on geometrical interpretation of SEU cross-section and an analytical solution to the diffusion problem obtained for a simplified IC topology model. A good fit of the model to the experimental data encompassing 7 generations of SRAMs is demonstrated.

A simple analytical model of single-event upsets in bulk CMOS

International Nuclear Information System (INIS)

Sogoyan, Armen V.; Chumakov, Alexander I.; Smolin, Anatoly A.; Ulanova, Anastasia V.; Boruzdina, Anna B.

2017-01-01

During the last decade, multiple new methods of single event upset (SEU) rate prediction for aerospace systems have been proposed. Despite different models and approaches being employed in these methods, they all share relatively high usage complexity and require information about a device that is not always available to an end user. This work presents an alternative approach to estimating SEU cross-section as a function of linear energy transfer (LET) that can be further developed into a method of SEU rate prediction. The goal is to propose a simple, yet physics-based, approach with just two parameters that can be used even in situations when only a process node of the device is known. The developed approach is based on geometrical interpretation of SEU cross-section and an analytical solution to the diffusion problem obtained for a simplified IC topology model. A good fit of the model to the experimental data encompassing 7 generations of SRAMs is demonstrated.

Talys calculations for evaluation of neutron-induced single-event upset cross sections

Energy Technology Data Exchange (ETDEWEB)

Bourselier, Jean-Christophe

2005-08-15

The computer code TALYS has been used to calculate interactions between cosmic-ray neutrons and silicon nuclei with the goal to describe single-event upset (SEU) cross sections in microelectronics devices. Calculations for the Si(n,X) reaction extend over an energy range of 2 to 200 MeV. The obtained energy spectra of the resulting residuals and light-ions have been integrated using several different critical charges as SEU threshold. It is found that the SEU cross section seems largely to be dominated by {sup 28}Si recoils from elastic scattering. Furthermore, the shape of the SEU cross section as a function of the energy of the incoming neutron changes drastically with decreasing critical charge. The results presented in this report stress the importance of performing studies at mono-energetic neutron beams to advance the understanding of the underlying mechanisms causing SEUs.

Single Event Upset in Static Random Access Memories in Atmospheric Neutron Environments

Science.gov (United States)

Arita, Yutaka; Takai, Mikio; Ogawa, Izumi; Kishimoto, Tadafumi

2003-07-01

Single-event upsets (SEUs) in a 0.4 μm 4 Mbit complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) were investigated in various atmospheric neutron environments at sea level, at an altitude of 2612 m mountain, at an altitude of commercial airplane, and at an underground depth of 476 m. Neutron-induced SEUs increase with the increase in altitude. For a device with a borophosphosilicate glass (BPSG) film, SEU rates induced by thermal neutrons increase with the decrease in the cell charge of a memory cell. A thermal neutron-induced SEU is significant in SRAMs with a small cell charge. With the conditions of small cell charge, thermal neutron-induced SEUs account for 60% or more of the total neutron-induced SEUs. The SEU rate induced by atmospheric thermal neutrons can be estimated by an acceleration test using 252Cf.

Talys calculations for evaluation of neutron-induced single-event upset cross sections

International Nuclear Information System (INIS)

Bourselier, Jean-Christophe

2005-08-01

The computer code TALYS has been used to calculate interactions between cosmic-ray neutrons and silicon nuclei with the goal to describe single-event upset (SEU) cross sections in microelectronics devices. Calculations for the Si(n,X) reaction extend over an energy range of 2 to 200 MeV. The obtained energy spectra of the resulting residuals and light-ions have been integrated using several different critical charges as SEU threshold. It is found that the SEU cross section seems largely to be dominated by 28 Si recoils from elastic scattering. Furthermore, the shape of the SEU cross section as a function of the energy of the incoming neutron changes drastically with decreasing critical charge. The results presented in this report stress the importance of performing studies at mono-energetic neutron beams to advance the understanding of the underlying mechanisms causing SEUs

Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

Science.gov (United States)

Irom, Farokh; Farmanesh, Farhad; Kouba, Coy K.

2006-01-01

Single-event upset effects from heavy ions are measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes. The results are compared with previous results for SOI microprocessors with feature sizes of 130 and 180 nm. The cross section of the 90 nm SOI processors is smaller than results for 130 and 180 nm counterparts, but the threshold is about the same. The scaling of the cross section with reduction of feature size and core voltage for SOI microprocessors is discussed.

Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system

International Nuclear Information System (INIS)

Arita, Yutaka; Kihara, Yuji; Mitsuhasi, Junichi; Niita, Koji; Takai, Mikio; Ogawa, Izumi; Kishimoto, Tadafumi; Yoshihara, Tsutomu

2007-01-01

The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-μm-design-rule 4 Mbit static random access memory (SRAM) using particle and heavy-ion transport code system (PHITS): The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS. (author)

Characterization of System on a Chip (SoC) Single Event Upset (SEU) Responses Using SEU Data, Classical Reliability Models, and Space Environment Data

Science.gov (United States)

Berg, Melanie; Label, Kenneth; Campola, Michael; Xapsos, Michael

2017-01-01

We propose a method for the application of single event upset (SEU) data towards the analysis of complex systems using transformed reliability models (from the time domain to the particle fluence domain) and space environment data.

The single event upset environment for avionics at high latitude

International Nuclear Information System (INIS)

Sims, A.J.; Dyer, C.S.; Peerless, C.L.; Farren, J.

1994-01-01

Modern avionic systems for civil and military applications are becoming increasingly reliant upon embedded microprocessors and associated memory devices. The phenomenon of single event upset (SEU) is well known in space systems and designers have generally been careful to use SEU tolerant devices or to implement error detection and correction (EDAC) techniques where appropriate. In the past, avionics designers have had no reason to consider SEU effects but is clear that the more prevalent use of memory devices combined with increasing levels of IC integration will make SEU mitigation an important design consideration for future avionic systems. To this end, it is necessary to work towards producing models of the avionics SEU environment which will permit system designers to choose components and EDAC techniques which are based on predictions of SEU rates correct to much better than an order of magnitude. Measurements of the high latitude SEU environment at avionics altitude have been made on board a commercial airliner. Results are compared with models of primary and secondary cosmic rays and atmospheric neutrons. Ground based SEU tests of static RAMs are used to predict rates in flight

Single event upset in static random access memories in atmospheric neutron environments

CERN Document Server

Arita, Y; Ogawa, I; Kishimoto, T

2003-01-01

Single-event upsets (SEUs) in a 0.4 mu m 4Mbit complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) were investigated in various atmospheric neutron environments at sea level, at an altitude of 2612 m mountain, at an altitude of commercial airplane, and at an underground depth of 476m. Neutron-induced SEUs increase with the increase in altitude. For a device with a borophosphosilicate glass (BPSG) film, SEU rates induced by thermal neutrons increase with the decrease in the cell charge of a memory cell. A thermal neutron-induced SEU is significant in SRAMs with a small cell charge. With the conditions of small cell charge, thermal neutron-induced SEUs account for 60% or more of the total neutron-induced SEUs. The SEU rate induced by atmospheric thermal neutrons can be estimated by an acceleration test using sup 2 sup 5 sup 2 Cf. (author)

Single event upset studies on the CMS tracker APV25 readout chip

International Nuclear Information System (INIS)

Noah, E.; Bauer, T.; Bisello, D.; Faccio, F.; Friedl, M.; Fulcher, J.R.; Hall, G.; Huhtinen, M.; Kaminsky, A.; Pernicka, M.; Raymond, M.; Wyss, J.

2002-01-01

The microstrip tracker for the CMS experiment at the CERN Large Hadron Collider will be read out using APV25 chips. During high luminosity running the tracker will be exposed to particle fluxes up to 10 7 cm -2 s -1 , which raises concerns that the APV25 could occasionally suffer Single Event Upsets (SEUs). The effect of SEU on the APV25 has been studied to investigate implications for CMS detector operation and from the viewpoint of detailed circuit operation, to improve the understanding of its origin and what factors affect its magnitude. Simulations were performed to reconstruct the effects created by highly ionising particles striking sensitive parts of the circuits, along with consideration of the underlying mechanisms of charge deposition, collection and the consequences. A model to predict the behaviour of the memory circuits in the APV25 has been developed and data collected from dedicated experiments using both heavy ions and hadrons have been shown to support it

Nuclear data relevant to single event upsets in semiconductor memories induced by cosmic-ray neutrons and protons

International Nuclear Information System (INIS)

Watanabe, Yukinobu

2008-01-01

The role of nuclear data is examined in the study of single event upset (SEU) phenomena in semiconductor memories caused by cosmic-ray neutrons and protons. Neutron and proton SEU cross sections are calculated with a simplified semi-empirical model using experimental heavy-ion SEU cross-sections and a dedicated database of neutron and proton induced reactions on 28 Si. Some impacts of the nuclear reaction data on SEU simulation are analyzed by investigating relative contribution of secondary ions and neutron elastic scattering to SEU and influence of simultaneous multiple ions emission on SEU. (author)

Relationship between single-event upset immunity and fabrication processes of recent memories; Relations entre l'immunite au SEU et les procedes de fabrication de memoires recentes

Energy Technology Data Exchange (ETDEWEB)

Nemoto, N.; Shindou, H.; Kuboyama, S.; Matsuda, S. [National Space Development Agency of Japan, Ibaraki-ken (Japan); Itoh, H.; Okada, S.; Nashiyama, I. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

1999-07-01

Single-Event upset (SEU) immunity for commercial devices were evaluated by irradiation tests using high-energy heavy ions. We show test results and describe the relationship between observed SEU and structures/fabrication processes. We have evaluated single-even upset (SEU) tolerance of recent commercial memory devices using high energy heavy ions in order to find relationship between SEU rate and their fabrication process. It was revealed that the change of the process parameter gives much effect for the SEU rate of the devices. (authors)

Computing in the presence of soft bit errors. [caused by single event upset on spacecraft

Science.gov (United States)

Rasmussen, R. D.

1984-01-01

It is shown that single-event-upsets (SEUs) due to cosmic rays are a significant source of single bit error in spacecraft computers. The physical mechanism of SEU, electron hole generation by means of Linear Energy Transfer (LET), it discussed with reference made to the results of a study of the environmental effects on computer systems of the Galileo spacecraft. Techniques for making software more tolerant of cosmic ray effects are considered, including: reducing the number of registers used by the software; continuity testing of variables; redundant execution of major procedures for error detection; and encoding state variables to detect single-bit changes. Attention is also given to design modifications which may reduce the cosmic ray exposure of on-board hardware. These modifications include: shielding components operating in LEO; removing low-power Schottky parts; and the use of CMOS diodes. The SEU parameters of different electronic components are listed in a table.

Nuclear data relevant to single-event upsets (SEU) in microelectronics and their application to SEU simulation

International Nuclear Information System (INIS)

Watanabe, Yukinobu; Tukamoto, Yasuyuki; Kodama, Akihiro; Nakashima, Hideki

2004-01-01

A cross-section database for neutron-induced reactions on 28 Si was developed in the energy range between 2 MeV and 3 GeV in order to analyze single-event upsets (SEUs) phenomena induced by cosmic-ray neutrons in microelectronic devices. A simplified spherical device model was proposed for simulation of the initial process of SEUs. The model was applied to SEU cross-section calculations for semiconductor memory devices. The calculated results were compared with measured SEU cross-sections and the other simulation result. The dependence of SEU cross-sections on incident neutron energy and secondary ions having the most important effects on SEUs are discussed. (author)

Single Event Upset Rate Estimates for a 16-K CMOS (Complementary Metal Oxide Semiconductor) SRAM (Static Random Access Memory).

Science.gov (United States)

1986-09-30

4 . ~**..ft.. ft . - - - ft SI TABLES 9 I. SA32~40 Single Event Upset Test, 1140-MeV Krypton, 9/l8/8~4. . .. .. .. .. .. .16 II. CRUP Simulation...cosmic ray interaction analysis described in the remainder of this report were calculated using the CRUP computer code 3 modified for funneling. The... CRUP code requires, as inputs, the size of a depletion region specified as a retangular parallel piped with dimensions a 9 b S c, the effective funnel

Position sensitive regions in a generic radiation sensor based on single event upsets in dynamic RAMs

International Nuclear Information System (INIS)

Darambara, D.G.; Spyrou, N.M.

1997-01-01

Modern integrated circuits are highly complex systems and, as such, are susceptible to occasional failures. Semiconductor memory devices, particularly dynamic random access memories (dRAMs), are subject to random, transient single event upsets (SEUs) created by energetic ionizing radiation. These radiation-induced soft failures in the stored data of silicon based memory chips provide the foundation for a new, highly efficient, low cost generic radiation sensor. The susceptibility and the detection efficiency of a given dRAM device to SEUs is a complicated function of the circuit design and geometry, the operating conditions and the physics of the charge collection mechanisms involved. Typically, soft error rates measure the cumulative response of all sensitive regions of the memory by broad area chip exposure in ionizing radiation environments. However, this study shows that many regions of a dynamic memory are competing charge collection centres having different upset thresholds. The contribution to soft fails from discrete regions or individual circuit elements of the memory device is unambiguously separated. Hence the use of the dRAM as a position sensitive radiation detector, with high spatial resolution, is assessed and demonstrated. (orig.)

Investigation of radial dose effect on single event upset cross-section due to heavy ions using GEANT4

International Nuclear Information System (INIS)

Boorboor, S.; Feghhi, S.A.H.; Jafari, H.

2015-01-01

The heavy ions are the main cause to produce single event upset (SEU) damage on electronic devices since they are high LET radiations. The dimension of electronic components in new technology, arise a challenge in radiation effect estimations. Accurate investigations require fully considering the ion track in energy deposition as a radial dose distribution. In this work, the distribution of delta rays as well as LET have been calculated to determine ionization structure around ion track by a Monte Carlo code, GEANT4. The radial dose of several heavy ions with different energy in silicon was investigated and compared with the works by other authors in this field. The results showed that heavy ions with identical LET can have different SEU cross-section in silicon transistors. As a demonstrative example, according to our results, the error probability for 4.8 GeV iron was 8 times greater than that for 15 MeV carbon ions, in transistors with new process technology which have small dimension and low critical charges. Our results show that considering radial dose distribution considerably improves the accuracy of the SEU cross-section estimation in electronic devices especially for new technologies. - Highlights: • The single event upset is produced by heavy ions interaction on electronic devices. • The radial dose of several heavy ions in silicon was calculated by GEANT4. • Heavy ions with identical LET had different SEU cross-section in silicon transistors. • Low dimension and critical charge devices were more sensitive to radial dose effect

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

International Nuclear Information System (INIS)

Xiao Yao; Guo Hong-Xia; Zhang Feng-Qi; Zhao Wen; Wang Yan-Ping; Zhang Ke-Ying; Ding Li-Li; Luo Yin-Hong; Wang Yuan-Ming; Fan Xue

2014-01-01

Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed. (interdisciplinary physics and related areas of science and technology)

Study on relations between heavy ions single event upset cross sections and γ accumulated doses

International Nuclear Information System (INIS)

He Chaohui; Geng Bin; Wang Yanping; Peng Honglun; Yang Hailiang; Chen Xiaohua; Li Guozheng

2002-01-01

Experiments were done under 252 Cf and 60 Co γ source to study the relation between heavy ion Single Event Upset (SEU) cross sections and γ accumulated doses. There was no obvious rule and little influence of γ accumulated doses on SEU cross sections when Static Random Access Memories were in power off mode and static power on mode. In active measuring mode, the SEU cross section increased as the accumulated doses increasing when same data were written in memory cells. If reverse data, such as '55' and 'AA', were written in memory cells during the experiment, the SEU cross sections decreased to the level when memories were not irradiated under 60 Co γ source, even more small. It implied that the influence of γ accumulated doses on SEU cross sections can be set off by this method

Swift heavy ion induced single event upsets in high density UV-EPROM's

Energy Technology Data Exchange (ETDEWEB)

Dahiwale, S.S. [Department of Physics, University of Pune, Pune 7 (India); Shinde, N.S. [Department of Chemical Engineering, Mie University (Japan); Kanjilal, D. [Inter University Accelerator Center, New Delhi (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 7 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 7 (India)], E-mail: sanjay@physics.unipune.ernet.in

2008-04-15

A few high density UV-EPROM's (32Kb x 8) were irradiated with 5.41 MeV energy {alpha}-particles with fluences from 10{sup 4} to 10{sup 8} alphas/cm{sup 2} and 100 MeV nickel, iodine and silver ions for low fluences between 5 x 10{sup 7} and 10{sup 8} ions/cm{sup 2}. The energy and ion species was selected on the basis of predicted threshold values of linear energy transfer (LET) in silicon. The program which was stored in the memory found to be changed from 0 to 1 and 1 to 0 state, respectively. On the basis of changed states, the cross-sections ({sigma}) were calculated to investigate the single event effects/upsets. No upset was observed in case of {alpha}-particle since it has very low LET, but the SEU cross-section found to be more in case of Iodine i.e. 2.29 x 10{sup -3} cm{sup 2} than that of nickel, 2.12 x 10{sup -3} cm{sup 2} and silver, 2.26 x 10{sup -3}. This mainly attributes that LET for iodine is more as compared to silver and nickel ions, which deposits large amount of energy near the sensitive node of memory cell in the form of electron-hole pairs required to change the state. These measured SEU cross-section were also compared with theoretically predicted values along with the Weibull distribution fit to the ion induced experimental SEU data. The theoretical predicted SEU cross-section 3.27 x 10{sup -3} cm{sup 2} found to be in good agreement with the measured SEU cross-section.

Comparison of analytical models and experimental results for single-event upset in CMOS SRAMs

International Nuclear Information System (INIS)

Mnich, T.M.; Diehl, S.E.; Shafer, B.D.

1983-01-01

In an effort to design fully radiation-hardened memories for satellite and deep-space applications, a 16K and a 2K CMOS static RAM were modeled for single-particle upset during the design stage. The modeling resulted in the addition of a hardening feedback resistor in the 16K remained tentatively unaltered. Subsequent experiments, using the Lawrence Berkeley Laboratories' 88-inch cyclotron to accelerate krypton and oxygen ions, established an upset threshold for the 2K and the 16K without resistance added, as well as a hardening threshold for the 16K with feedback resistance added. Results for the 16K showed it to be hardenable to the higher level than previously published data for other unhardened 16K RAMs. The data agreed fairly well with the modeling results; however, a close look suggests that modification of the simulation methodology is required to accurately predict the resistance necessary to harden the RAM cell

Impact of temperature on single event upset measurement by heavy ions in SRAM devices

International Nuclear Information System (INIS)

Liu Tianqi; Geng Chao; Zhang Zhangang; Gu Song; Tong Teng; Xi Kai; Hou Mingdong; Liu Jie; Zhao Fazhan; Liu Gang; Han Zhengsheng

2014-01-01

The temperature dependence of single event upset (SEU) measurement both in commercial bulk and silicon on insulator (SOI) static random access memories (SRAMs) has been investigated by experiment in the Heavy Ion Research Facility in Lanzhou (HIRFL). For commercial bulk SRAM, the SEU cross section measured by 12 C ions is very sensitive to the temperature. The temperature test of SEU in SOI SRAM was conducted by 209 Bi and 12 C ions, respectively, and the SEU cross sections display a remarkable growth with the elevated temperature for 12 C ions but keep constant for 209 Bi ions. The impact of temperature on SEU measurement was analyzed by Monte Carlo simulation. It is revealed that the SEU cross section is significantly affected by the temperature around the threshold linear energy transfer of SEU occurrence. As the SEU occurrence approaches saturation, the SEU cross section gradually exhibits less temperature dependency. Based on this result, the experimental data measured in HIRFL was analyzed, and then a reasonable method of predicting the on-orbit SEU rate was proposed. (semiconductor devices)

Feasibility of a neutron detector-dosemeter based on single-event upsets in dynamic random-access memories

International Nuclear Information System (INIS)

Phillips, G.W.; August, R.A.; Campbell, A.B.; Nelson, M.E.; Guardala, N.A.; Price, J.L.; Moscovitch, M.

2002-01-01

The feasibility was investigated of a solid-state neutron detector/dosemeter based on single-event upset (SEU) effects in dynamic random-access memories (DRAMs), commonly used in computer memories. Such a device, which uses a neutron converter material to produce a charged particle capable of causing an upset, would be light-weight, low-power, and could be read simply by polling the memory for bit flips. It would have significant advantages over standard solid-state neutron dosemeters which require off-line processing for track etching and analysis. Previous efforts at developing an SEU neutron detector/dosemeter have suffered from poor response, which can be greatly enhanced by selecting a modern high-density DRAM chip for SEU sensitivity and by using a thin 10 B film as a converter. Past attempts to use 10 B were not successful because the average alpha particle energy was insufficient to penetrate to the sensitive region of the memory. This can be overcome by removing the surface passivation layer before depositing the 10 B film or by implanting 10B directly into the chip. Previous experimental data show a 10 3 increase in neutron sensitivity by chips containing borosilicate glass, which could be used in an SEU detector. The results are presented of simulations showing that the absolute efficiency of an SEU neutron dosemeter can be increased by at least a factor of 1000 over earlier designs. (author)

Neutron-induced Single Event Upset on the RPC front-end chips for the CMS experiment

Energy Technology Data Exchange (ETDEWEB)

Abbrescia, M.; Colaleo, A.; Iaselli, G.; Loddo, F.; Maggi, M.; Marangelli, B.; Natali, S.; Nuzzo, S.; Pugliese, G.; Ranieri, A.; Romano, F.; Altieri, S.; Belli, G.; Bruno, G.; Guida, R.; Merlo, M.; Ratti, S.P.; Riccardi, C.; Torre, P.; Vitulo, P. E-mail: paolo.vitulo@pv.infn.it; De Bari, A.; Manera, S

2002-05-21

Neutrons from a reactor and from a cyclotron have been used to characterise the CMS Resistive Plate Chambers (RPCs) front-end chip to neutron-induced damaging events. Single Event Upset (SEU) cross-sections have been measured up to 60 MeV for different chip thresholds. Tests at a reactor were done with an integrated fast (E{sub n}>3 MeV) neutron fluence of 1.7x10{sup 10} cm{sup -2} and a thermal neutron fluence of 9.5x10{sup 11} cm{sup -2}. High-energy neutrons from a cyclotron were used up to a fluence of 10{sup 12} cm{sup -2}. Data indicate the existence of a chip SEU sensitivity already at thermal energy and a saturated SEU cross-section from 3 to 60 MeV. Values of the SEU cross-sections from the thermal run well agree with those obtained by another CMS group that uses the same technology (0.8 {mu}m BiCMOS) though with different architecture. Cross-sections obtained with fast neutrons (from 3 MeV to about 10 MeV) are consistently higher by one order of magnitude compared to the thermal one. The average time between consecutive SEU events in each chip of the CMS barrel RPCs can be estimated to be 1 h.

Single event effects and performance predictions for space applications of RISC processors

International Nuclear Information System (INIS)

Kimbrough, J.R.; Colella, N.J.; Denton, S.M.; Shaeffer, D.L.; Shih, D.; Wilburn, J.W.; Coakley, P.G.; Casteneda, C.; Koga, R.; Clark, D.A.; Ullmann, J.L.

1994-01-01

Proton and ion Single Event Phenomena (SEP) tests were performed on 32-b processors including R3000A's from all commercial manufacturers along with the Performance PR3400 family, Integrated Device Technology Inc. 79R3081, LSI Logic Corporation LR33000HC, and Intel i80960MX parts. The microprocessors had acceptable upset rates for operation in a low earth orbit or a lunar mission such as CLEMENTINE with a wide range in proton total dose failure. Even though R3000A devices are 60% smaller in physical area than R3000 devices, there was a 340% increase in device Single Event Upset (SEU) cross section. Software tests of varying complexity demonstrate that registers and other functional blocks using register architecture dominate the cross section. The current approach of giving a single upset cross section can lead to erroneous upset rates depending on the application software

Single Event Upset Analysis: On-orbit performance of the Alpha Magnetic Spectrometer Digital Signal Processor Memory aboard the International Space Station

Science.gov (United States)

Li, Jiaqiang; Choutko, Vitaly; Xiao, Liyi

2018-03-01

Based on the collection of error data from the Alpha Magnetic Spectrometer (AMS) Digital Signal Processors (DSP), on-orbit Single Event Upsets (SEUs) of the DSP program memory are analyzed. The daily error distribution and time intervals between errors are calculated to evaluate the reliability of the system. The particle density distribution of International Space Station (ISS) orbit is presented and the effects from the South Atlantic Anomaly (SAA) and the geomagnetic poles are analyzed. The impact of solar events on the DSP program memory is carried out combining data analysis and Monte Carlo simulation (MC). From the analysis and simulation results, it is concluded that the area corresponding to the SAA is the main source of errors on the ISS orbit. Solar events can also cause errors on DSP program memory, but the effect depends on the on-orbit particle density.

Single-event effect ground test issues

International Nuclear Information System (INIS)

Koga, R.

1996-01-01

Ground-based single event effect (SEE) testing of microcircuits permits characterization of device susceptibility to various radiation induced disturbances, including: (1) single event upset (SEU) and single event latchup (SEL) in digital microcircuits; (2) single event gate rupture (SEGR), and single event burnout (SEB) in power transistors; and (3) bit errors in photonic devices. These characterizations can then be used to generate predictions of device performance in the space radiation environment. This paper provides a general overview of ground-based SEE testing and examines in critical depth several underlying conceptual constructs relevant to the conduct of such tests and to the proper interpretation of results. These more traditional issues are contrasted with emerging concerns related to the testing of modern, advanced microcircuits

Monte Carlo calculation of the cross-section of single event upset induced by 14MeV neutrons

International Nuclear Information System (INIS)

Li, H.; Deng, J.Y.; Chang, D.M.

2005-01-01

High-density static random access memory may experience single event upsets (SEU) in neutron environments. We present a new method to calculate the SEU cross-section. Our method is based on explicit generation and transport of the secondary reaction products and detailed accounting for energy loss by ionization. Instead of simulating the behavior of the circuit, we use the Monte Carlo method to simulate the process of energy deposition in sensitive volumes. Thus, we do not need to know details about the circuit. We only need a reasonable guess for the size of the sensitive volumes. In the Monte Carlo simulation, the cross-section of SEU induced by 14MeV neutrons is calculated. We can see that the Monte Carlo simulation not only can provide a new method to calculate SEU cross-section, but also can give a detailed description about random process of the SEU

Approaches to proton single-event rate calculations

International Nuclear Information System (INIS)

Petersen, E.L.

1996-01-01

This article discusses the fundamentals of proton-induced single-event upsets and of the various methods that have been developed to calculate upset rates. Two types of approaches are used based on nuclear-reaction analysis. Several aspects can be analyzed using analytic methods, but a complete description is not available. The paper presents an analytic description for the component due to elastic-scattering recoils. There have been a number of studies made using Monte Carlo methods. These can completely describe the reaction processes, including the effect of nuclear reactions occurring outside the device-sensitive volume. They have not included the elastic-scattering processes. The article describes the semiempirical approaches that are most widely used. The quality of previous upset predictions relative to space observations is discussed and leads to comments about the desired quality of future predictions. Brief sections treat the possible testing limitation due to total ionizing dose effects, the relationship of proton and heavy-ion upsets, upsets due to direct proton ionization, and relative proton and cosmic-ray upset rates

Development of a Nuclear Reaction Database on Silicon for Simulation of Neutron-Induced Single-Event Upsets in Microelectronics and its Application

International Nuclear Information System (INIS)

Watanabe, Yukinobu; Kodama, Akihiro; Tukamoto, Yasuyuki; Nakashima, Hideki

2005-01-01

We have developed a cross-section database for neutron-induced reactions on 28Si in the energy range between 2 MeV and 3 GeV in order to analyze single-event upsets (SEUs) phenomena induced by cosmic-ray neutrons in microelectronic devices. A simplified spherical device model is proposed for simulation of the initial processes of SEUs. The model is applied to SEU cross-section calculations for semiconductor memory devices. The calculated results are compared with measured SEU cross sections and the other simulation result. The dependence of SEU cross sections on incident neutron energy and secondary ions having the most important effects on SEUs are discussed

Single event upset mitigation techniques for FPGAs utilized in nuclear power plant digital instrumentation and control

International Nuclear Information System (INIS)

Wang Xin; Holbert, Keith E.; Clark, Lawrence T.

2011-01-01

Highlights: → Triple modular redundancy (TMR) implementation is the best solution for digital I and C. → Maximal probability of two simultaneous errors with TMR maximum partition is 4.44%. → Dual modular redundancy minimum logic partitioning design is an additional option. - Abstract: Field programmable gate arrays (FPGAs) are integrated circuits being increasingly used for digital instrumentation and control (I and C) in nuclear power plants (NPPs) because of low cost, re-configurability and low design turn-around time. However, to ensure reliability, proper design techniques must be employed since the memory and logic in FPGAs are susceptible to single event upsets (SEUs). Triple modular redundancy (TMR) has become a common SEU mitigation design technique because of its straightforward implementation and reliable results. Partitioned TMR approaches are introduced in this paper, and formulae derived indicate that the maximum probability of two simultaneous errors [P E ] max is inversely proportional to the number of logic partitions in a TMR design, when each redundant logic block in every logic partition has the same number of sensitive nodes. However, the maximum logic partitioning design cannot completely eliminate the possibility of two simultaneous upsets. For the example test circuit it is found that [P E ] max is reduced dramatically from 66.67% for minimum logic partitioning to 4.44% for maximum logic partitioning. Because TMR introduces significant overhead due to its full hardware redundancy, a dual modular redundancy approach is also examined for application to less demanding situations. By comparative analysis this study reaches the conclusion that the maximum logic partitioning TMR implementation is the best solution for digital I and C applications in NPPs where obtaining robustness is of the highest importance, despite its higher area overhead.

Single event effect testing of the Intel 80386 family and the 80486 microprocessor

International Nuclear Information System (INIS)

Moran, A.; LaBel, K.; Gates, M.; Seidleck, C.; McGraw, R.; Broida, M.; Firer, J.; Sprehn, S.

1996-01-01

The authors present single event effect test results for the Intel 80386 microprocessor, the 80387 coprocessor, the 82380 peripheral device, and on the 80486 microprocessor. Both single event upset and latchup conditions were monitored

Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM

Science.gov (United States)

Chen, Dakai; Wilcox, Edward; Berg, Melanie; Kim, Hak; Phan, Anthony; Figueiredo, Marco; Seidleck, Christina; LaBel, Kenneth

2015-01-01

We investigated the heavy ion single-event effect (SEE) susceptibility of the industry’s first stand-alone memory based on conductive-bridge memory (CBRAM) technology. The device is available as an electrically erasable programmable read-only memory (EEPROM). We found that single-event functional interrupt (SEFI) is the dominant SEE type for each operational mode (standby, dynamic read, and dynamic write/read). SEFIs occurred even while the device is statically biased in standby mode. Worst case SEFIs resulted in errors that filled the entire memory space. Power cycle did not always clear the errors. Thus the corrupted cells had to be reprogrammed in some cases. The device is also vulnerable to bit upsets during dynamic write/read tests, although the frequency of the upsets are relatively low. The linear energy transfer threshold for cell upset is between 10 and 20 megaelectron volts per square centimeter per milligram, with an upper limit cross section of 1.6 times 10(sup -11) square centimeters per bit (95 percent confidence level) at 10 megaelectronvolts per square centimeter per milligram. In standby mode, the CBRAM array appears invulnerable to bit upsets.

Single-event transients (SET) in analog circuits

International Nuclear Information System (INIS)

Chen Panxun; Zhou Kaiming

2006-01-01

A new phenomenon of single- event upset is introduced. The transient signal is produced in the output of analog circuits after a heavy ion strikes. The transient upset can influence the circuit connected with the output of analog circuits. For example, the output of operational amplifier can be connected with the input of a digital counter, and the pulse of sufficiently high transient output induced by an ion can increase counts of the counter. On the other hand, the transient voltage signal at the output of analog circuits can change the stage of other circuits. (authors)

Development of Single-Event Upset hardened programmable logic devices in deep submicron CMOS

International Nuclear Information System (INIS)

Bonacini, S.

2007-11-01

The electronics associated to the particle detectors of the Large Hadron Collider (LHC), under construction at CERN, will operate in a very harsh radiation environment. Commercial Off-The-Shelf (COTS) components cannot be used in the vicinity of particle collision due to their poor radiation tolerance. This thesis is a contribution to the effort to cover the need for radiation-tolerant SEU-robust (Single Event Upset) programmable components for application in high energy physics experiments. Two components are under development: a Programmable Logic Device (PLD) and a Field-Programmable Gate Array (FPGA). The PLD is a fuse-based, 10-input, 8-I/O general architecture device in 0.25 μm CMOS technology. The FPGA under development is a 32*32 logic block array, equivalent to ∼ 25 k gates, in 0.13 μm CMOS. The irradiation test results obtained in the CMOS 0.25 μm technology demonstrate good robustness of the circuit up to an LET (Linear Energy Transfer) of 79.6 cm 2 *MeV/mg, which make it suitable for the target environment. The CMOS 0.13 μm circuit has showed robustness to an LET of 37.4 cm 2 *MeV/mg in the static test mode and has increased sensitivity in the dynamic test mode. This work focused also on the research for an SEU-robust register in both the mentioned technologies. The SEU-robust register is employed as a user data flip-flop in the FPGA and PLD designs and as a configuration cell as well in the FPGA design

The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells

International Nuclear Information System (INIS)

Li Da-Wei; Qin Jun-Rui; Chen Shu-Ming

2013-01-01

Using computer-aided design three-dimensional simulation technology, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in supply voltage variation. (geophysics, astronomy, and astrophysics)

Experimental study on heavy-ion single event effect on nanometer DDR SRAM

International Nuclear Information System (INIS)

Luo Yinhong; Zhang Fengqi; Guo Hongxia; Zhou Hui; Wang Yanping; Zhang Keying

2013-01-01

Single event effect experimental study on 90 nm and 65 nm DDR SRAM were carried out, single event upset (SEU) cross section was discussed as a function of several parameters such as feature size, test pattern, incidence angle, supply voltage. Key influence factors and effect rule were analyzed. Feasibility of the current test method was discussed. Results indicate that, SEU cross section reduces as technologies scale down; the influence of test pattern and power supply on SEU cross section is small; tilt angle increases SEU cross section due to multiple upset increasement. The applicability of cosine tilt test method is correlative to ion species and linear energy transfer (LET) values. (authors)

The single-event effect evaluation technology for nano integrated circuits

International Nuclear Information System (INIS)

Zheng Hongchao; Zhao Yuanfu; Yue Suge; Fan Long; Du Shougang; Chen Maoxin; Yu Chunqing

2015-01-01

Single-event effects of nano scale integrated circuits are investigated. Evaluation methods for single-event transients, single-event upsets, and single-event functional interrupts in nano circuits are summarized and classified in detail. The difficulties in SEE testing are discussed as well as the development direction of test technology, with emphasis placed on the experimental evaluation of a nano circuit under heavy ion, proton, and laser irradiation. The conclusions in this paper are based on many years of testing at accelerator facilities and our present understanding of the mechanisms for SEEs, which have been well verified experimentally. (paper)

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

International Nuclear Information System (INIS)

Massengill, L.W.

1996-01-01

A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAM's) is presented. The sources of single-event (SE) radiation particles, causes of circuit information loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed

Future challenges in single event effects for advanced CMOS technologies

International Nuclear Information System (INIS)

Guo Hongxia; Wang Wei; Luo Yinhong; Zhao Wen; Guo Xiaoqiang; Zhang Keying

2010-01-01

SEE have became a substantial Achilles heel for the reliability of space-based advanced CMOS technologies with features size downscaling. Future space and defense systems require identification and understanding of single event effects to develop hardening approaches for advanced technologies, including changes in device geometry and materials affect energy deposition, charge collection,circuit upset, parametric degradation devices. Topics covered include the impact of technology scaling on radiation response, including single event transients in high speed digital circuits, evidence for single event effects caused by proton direct ionization, and the impact for SEU induced by particle energy effects and indirect ionization. The single event effects in CMOS replacement technologies are introduced briefly. (authors)

Single event effects induced by 15.14 MeV/u 136Xe ions

International Nuclear Information System (INIS)

Hou Mingdong; Zhang Qingxiang; Liu Jie; Wang Zhiguang; Jin Yunfan; Zhu Zhiyong; Zhen Honglou; Liu Changlong; Chen Xiaoxi; Wei Xinguo; Zhang Lin; Fan Youcheng; Zhu Zhourong; Zhang Yiting

2002-01-01

Single event effects induced by 15.14 MeV/u 136 Xe ions in different batches of 32k x 8 bits static random access memory are studied. The incident angle dependences of the cross sections for single event upset and single event latch up are presented. The SEE cross sections are plotted versus energy loss instead of linear energy transfer value in sensitive region. The depth of sensitive volume and thickness of 'dead' layer above the sensitive volume are estimated

FinFET memory cell improvements for higher immunity against single event upsets

Science.gov (United States)

Sajit, Ahmed Sattar

The 21st century is witnessing a tremendous demand for transistors. Life amenities have incorporated the transistor in every aspect of daily life, ranging from toys to rocket science. Day by day, scaling down the transistor is becoming an imperious necessity. However, it is not a straightforward process; instead, it faces overwhelming challenges. Due to these scaling changes, new technologies, such as FinFETs for example, have emerged as alternatives to the conventional bulk-CMOS technology. FinFET has more control over the channel, therefore, leakage current is reduced. FinFET could bridge the gap between silicon devices and non-silicon devices. The semiconductor industry is now incorporating FinFETs in systems and subsystems. For example, Intel has been using them in their newest processors, delivering potential saving powers and increased speeds to memory circuits. Memory sub-systems are considered a vital component in the digital era. In memory, few rows are read or written at a time, while the most rows are static; hence, reducing leakage current increases the performance. However, as a transistor shrinks, it becomes more vulnerable to the effects from radioactive particle strikes. If a particle hits a node in a memory cell, the content might flip; consequently, leading to corrupting stored data. Critical fields, such as medical and aerospace, where there are no second chances and cannot even afford to operate at 99.99% accuracy, has induced me to find a rigid circuit in a radiated working environment. This research focuses on a wide spectrum of memories such as 6T SRAM, 8T SRAM, and DICE memory cells using FinFET technology and finding the best platform in terms of Read and Write delay, susceptibility level of SNM, RSNM, leakage current, energy consumption, and Single Event Upsets (SEUs). This research has shown that the SEU tolerance that 6T and 8T FinFET SRAMs provide may not be acceptable in medical and aerospace applications where there is a very high

Single event effects in pulse width modulation controllers

International Nuclear Information System (INIS)

Penzin, S.H.; Crain, W.R.; Crawford, K.B.; Hansel, S.J.; Kirshman, J.F.; Koga, R.

1996-01-01

SEE testing was performed on pulse width modulation (PWM) controllers which are commonly used in switching mode power supply systems. The devices are designed using both Set-Reset (SR) flip-flops and Toggle (T) flip-flops which are vulnerable to single event upset (SEU) in a radiation environment. Depending on the implementation of the different devices the effect can be significant in spaceflight hardware

High-energy heavy ion testing of VLSI devices for single event ...

Indian Academy of Sciences (India)

Unknown

per describes the high-energy heavy ion radiation testing of VLSI devices for single event upset (SEU) ... The experimental set up employed to produce low flux of heavy ions viz. silicon ... through which they pass, leaving behind a wake of elec- ... for use in Bus Management Unit (BMU) and bulk CMOS ... was scheduled.

Single event upset and charge collection measurements using high energy protons and neutrons

International Nuclear Information System (INIS)

Normand, E.; Oberg, D.L.; Wert, J.L.; Ness, J.D.; Majewski, P.P.; Wender, S.; Gavron, A.

1994-01-01

RAMs, microcontrollers and surface barrier detectors were exposed to beams of high energy protons and neutrons to measure the induced number of upsets as well as energy deposition. The WNR facility at Los Alamos provided a neutron spectrum similar to that of the atmospheric neutrons. Its effect on devices was compared to that of protons with energies of 200, 400, 500, and 800 MeV. Measurements indicate that SEU cross sections for 400 MeV protons are similar to those induced by the atmospheric neutron spectrum

Solar particle induced upsets in the TDRS-1 attitude control system RAM during the October 1989 solar particle events

International Nuclear Information System (INIS)

Croley, D.R.; Garrett, H.B.; Murphy, G.B.; Garrard, T.L.

1995-01-01

The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAM unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo, designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEU's calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEU's by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEU's. The proton fluence spectrum at the device level was gotten by transporting the protons through the estimated shielding distribution. The number of calculated proton-induced SEU's was 72, yielding a total of 248 predicted SEU's, very close to the 243 observed SEU's

Research on generation mechanism of single event transient current generated in the semiconductor using ion accelerator

International Nuclear Information System (INIS)

Hirao, Toshio

2007-01-01

Single-event upset (SEU) is triggered when an amount of electric charges induced by energetic ion incidence exceeds a value known as a critical charge in a very short time period. Therefore, accurate evaluation of electric charge and understanding of basic mechanism of SEU are necessary for the improvement of SEU torrance of electronic devices. In this paper, the collected charges for the single event transient current induced on semiconductor by heavy ion microbeams, and application to use microbeam for single event studies are presented. (author)

Investigation of Single Events Upsets in Silicon and GaAs Structures Using Reaction Calculations

Science.gov (United States)

1994-09-01

Cubed Corporation. The CREME (Cosmic-Ray-Effects on Microelectronics) (73) and the CRUP (Cos- mic Ray Upset Program) (74) are both from the Naval...knowledge, that is impossible to do in advance. The errors per bit day calculated using CREME and CRUP for a device exposed to Adams’ 90% worst-case...emitter junction was measured for alpha particles ion measurements and used in CREME (2) and CRUP from an Americium source in two ways: First, the (3

Single Event Effects Test Facility Options at the Oak Ridge National Laboratory

Energy Technology Data Exchange (ETDEWEB)

Riemer, Bernie [ORNL; Gallmeier, Franz X [ORNL; Dominik, Laura J [ORNL

2015-01-01

Increasing use of microelectronics of ever diminishing feature size in avionics systems has led to a growing Single Event Effects (SEE) susceptibility arising from the highly ionizing interactions of cosmic rays and solar particles. Single event effects caused by atmospheric radiation have been recognized in recent years as a design issue for avionics equipment and systems. To ensure a system meets all its safety and reliability requirements, SEE induced upsets and potential system failures need to be considered, including testing of the components and systems in a neutron beam. Testing of integrated circuits (ICs) and systems for use in radiation environments requires the utilization of highly advanced laboratory facilities that can run evaluations on microcircuits for the effects of radiation. This paper provides a background of the atmospheric radiation phenomenon and the resulting single event effects, including single event upset (SEU) and latch up conditions. A study investigating requirements for future single event effect irradiation test facilities and developing options at the Spallation Neutron Source (SNS) is summarized. The relatively new SNS with its 1.0 GeV proton beam, typical operation of 5000 h per year, expertise in spallation neutron sources, user program infrastructure, and decades of useful life ahead is well suited for hosting a world-class SEE test facility in North America. Emphasis was put on testing of large avionics systems while still providing tunable high flux irradiation conditions for component tests. Makers of ground-based systems would also be served well by these facilities. Three options are described; the most capable, flexible, and highest-test-capacity option is a new stand-alone target station using about one kW of proton beam power on a gas-cooled tungsten target, with dual test enclosures. Less expensive options are also described.

Solar Particle Induced Upsets in the TDRS-1 Attitude Control System RAM During the October 1989 Solar Particle Events

Science.gov (United States)

Croley, D. R.; Garrett, H. B.; Murphy, G. B.; Garrard,T. L.

1995-01-01

The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAM unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo, designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEU's calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEU's by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEU'S. The proton fluence spectrum at the device level was gotten by transporting the protons through the estimated shielding distribution. The number of calculated proton-induced SEU's was 72, yielding a total of 248 predicted SEU'S, very dose to the 243 observed SEU'S. These calculations uniquely demonstrate the roles that solar heavy ions and protons played in the production of SEU

Single event phenomena in atmospheric neutron environments

International Nuclear Information System (INIS)

Gossett, C.A.; Hughlock, B.W.; Katoozi, M.; LaRue, G.S.; Wender, S.A.

1993-01-01

As integrated circuit technology achieves higher density through smaller feature sizes and as the airplane manufacturing industry integrates more sophisticated electronic components into the design of new aircraft, it has become increasingly important to evaluate the contribution of single event effects, primarily Single Event Upset (SEU), to the safety and reliability of commercial aircraft. In contrast to the effects of radiation on electronic systems in space applications for which protons and heavy ions are of major concern, in commercial aircraft applications the interactions of high energy neutrons are the dominant cause of single event effects. These high energy neutrons are produced by the interaction of solar and galactic cosmic rays, principally protons and heavy ions, in the upper atmosphere. This paper will describe direct experimental measurements of neutron-induced Single Event Effect (SEE) rates in commercial high density static random access memories in a neutron environment characteristic of that at commercial airplane altitudes. The first experimental measurements testing current models for neutron-silicon burst generation rates will be presented, as well as measurements of charge collection in silicon test structures as a function of neutron energy. These are the first laboratory SEE and charge collection measurements using a particle beam having a continuum energy spectrum and with a shape nearly identical to that observed during flight

Single event effects induced by 15.14 MeV/u sup 1 sup 3 sup 6 Xe ions

CERN Document Server

Hou Ming Dong; LiuJie; Wang Zhi Guang; Jin Yun Fan; Zhu Zhi Yong; Zhen Hong Lou; Liu Chang Long; Chen Xiao Xi; Wei Xin Guo; Zhang Li; Fan You Cheng; Zhu Zhou Rong; Zhang Yiting

2002-01-01

Single event effects induced by 15.14 MeV/u sup 1 sup 3 sup 6 Xe ions in different batches of 32k x 8 bits static random access memory are studied. The incident angle dependences of the cross sections for single event upset and single event latch up are presented. The SEE cross sections are plotted versus energy loss instead of linear energy transfer value in sensitive region. The depth of sensitive volume and thickness of 'dead' layer above the sensitive volume are estimated

Notice of Violation of IEEE Publication PrinciplesJoint Redundant Residue Number Systems and Module Isolation for Mitigating Single Event Multiple Bit Upsets in Datapath

Science.gov (United States)

Li, Lei; Hu, Jianhao

2010-12-01

Notice of Violation of IEEE Publication Principles"Joint Redundant Residue Number Systems and Module Isolation for Mitigating Single Event Multiple Bit Upsets in Datapath"by Lei Li and Jianhao Hu,in the IEEE Transactions on Nuclear Science, vol.57, no.6, Dec. 2010, pp. 3779-3786After careful and considered review of the content and authorship of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE's Publication Principles.This paper contains substantial duplication of original text from the paper cited below. The original text was copied without attribution (including appropriate references to the original author(s) and/or paper title) and without permission.Due to the nature of this violation, reasonable effort should be made to remove all past references to this paper, and future references should be made to the following articles:"Multiple Error Detection and Correction Based on Redundant Residue Number Systems"by Vik Tor Goh and M.U. Siddiqi,in the IEEE Transactions on Communications, vol.56, no.3, March 2008, pp.325-330"A Coding Theory Approach to Error Control in Redundant Residue Number Systems. I: Theory and Single Error Correction"by H. Krishna, K-Y. Lin, and J-D. Sun, in the IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, vol.39, no.1, Jan 1992, pp.8-17In this paper, we propose a joint scheme which combines redundant residue number systems (RRNS) with module isolation (MI) for mitigating single event multiple bit upsets (SEMBUs) in datapath. The proposed hardening scheme employs redundant residues to improve the fault tolerance for datapath and module spacings to guarantee that SEMBUs caused by charge sharing do not propagate among the operation channels of different moduli. The features of RRNS, such as independence, parallel and error correction, are exploited to establish the radiation hardening architecture for the datapath in radiation environments. In the proposed

Analysis of cosmic ray neutron-induced single-event phenomena

International Nuclear Information System (INIS)

Tukamoto, Yasuyuki; Watanabe, Yukinobu; Nakashima, Hideki

2003-01-01

We have developed a database of cross sections for the n+ 28 Si reaction in the energy range between 2 MeV and 3 GeV in order to analyze single-event upset (SEU) phenomena induced by cosmic-ray neutrons in semiconductor memory devices. The data are applied to calculations of SEU cross sections using the Burst Generation Rate (BGR) model including two parameters, critical charge and effective depth. The calculated results are compared with measured SEU cross-sections for energies up to 160 MeV, and the reaction products that provide important effects on SEU are mainly investigated. (author)

Proton upset rate prediction: a new sensitive volume concept definition

International Nuclear Information System (INIS)

Inguimbert, Christophe

1999-01-01

We present a model for predicting proton induced single event upset rate. The approach uses heavy ion cross section experimental data combined with nuclear reaction calculations in order to determine the proton upset cross section. The p+Si nuclear reaction as well as the Si(p, p)Si Coulombic scattering are described. The upset rate calculation depends on the energy deposited available in the charge collection region (sensitive region). This region is treated as a rectangular parallelepiped of thickness d at depth h. The sensitive thickness d is used as an input parameter in our model we have developed an original method to probe the sensitive region to evaluate d with reasonable accuracy d. We use short range ions and we propose a new mathematical analysis of these experimental data to determine h and d. This method consists in de-convoluting the heavy ion upset cross section σ_S_E_U(r) by the LET function of the incident ion LET(r) (r is the range of the incident ion). Our results are in relatively good agreement with other models. The accuracy of the method allows us to discuss the validity of the sensitive volume concept. Furthermore, we extrapolate an internal gain factor α that permit to take into account the charge collection mechanisms. α and d serve for quick and reasonably accurate prediction of proton induced SEU cross section in microelectronic devices. (author) [fr

Airplane Upset Training Evaluation Report

Science.gov (United States)

Gawron, Valerie J.; Jones, Patricia M. (Technical Monitor)

2002-01-01

Airplane upset accidents are a leading factor in hull losses and fatalities. This study compared five types of airplane-upset training. Each group was composed of eight, non-military pilots flying in their probationary year for airlines operating in the United States. The first group, 'No aero / no upset,' was made up of pilots without any airplane upset training or aerobatic flight experience; the second group, 'Aero/no upset,' of pilots without any airplane-upset training but with aerobatic experience; the third group, 'No aero/upset,' of pilots who had received airplane-upset training in both ground school and in the simulator; the fourth group, 'Aero/upset,' received the same training as Group Three but in addition had aerobatic flight experience; and the fifth group, 'In-flight' received in-flight airplane upset training using an instrumented in-flight simulator. Recovery performance indicated that clearly training works - specifically, all 40 pilots recovered from the windshear upset. However few pilots were trained or understood the use of bank to change the direction of the lift vector to recover from nose high upsets. Further, very few thought of, or used differential thrust to recover from rudder or aileron induced roll upsets. In addition, recovery from icing-induced stalls was inadequate.

Analysis by Monte Carlo simulations of the sensitivity to single event upset of SRAM memories under spatial proton or terrestrial neutron environment

International Nuclear Information System (INIS)

Lambert, D.

2006-07-01

Electronic systems in space and terrestrial environments are subjected to a flow of particles of natural origin, which can induce dysfunctions. These particles can cause Single Event Upsets (SEU) in SRAM memories. Although non-destructive, the SEU can have consequences on the equipment functioning in applications requiring a great reliability (airplane, satellite, launcher, medical, etc). Thus, an evaluation of the sensitivity of the component technology is necessary to predict the reliability of a system. In atmospheric environment, the SEU sensitivity is mainly caused by the secondary ions resulting from the nuclear reactions between the neutrons and the atoms of the component. In space environment, the protons with strong energies induce the same effects as the atmospheric neutrons. In our work, a new code of prediction of the rate of SEU has been developed (MC-DASIE) in order to quantify the sensitivity for a given environment and to explore the mechanisms of failures according to technology. This code makes it possible to study various technologies of memories SRAM (Bulk and SOI) in neutron and proton environment between 1 MeV and 1 GeV. Thus, MC-DASIE was used with experiment data to study the effect of integration on the sensitivity of the memories in terrestrial environment, a comparison between the neutron and proton irradiations and the influence of the modeling of the target component on the calculation of the rate of SEU. (author)

Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA

Science.gov (United States)

LaBel, Kenneth A.; OBryan, Martha V.; Chen, Dakai; Campola, Michael J.; Casey, Megan C.; Pellish, Jonathan A.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Ladbury, Raymond L.;

Applicability of LET to single events in microelectronic structures

Science.gov (United States)

Xapsos, Michael A.

1992-12-01

LET is often used as a single parameter to determine the energy deposited in a microelectronic structure by a single event. The accuracy of this assumption is examined for ranges of ion energies and volumes of silicon appropriate for modern microelectronics. It is shown to be accurate only under very restricted conditions. Significant differences arise because (1) LET is related to energy lost by the ion, not energy deposited in the volume; and (2) LET is an average value and does not account for statistical variations in energy deposition. Criteria are suggested for determining when factors other than LET should be considered, and new analytical approaches are presented to account for them. One implication of these results is that improvements can be made in space upset rate predictions by incorporating the new methods into currently used codes such as CREME and CRUP.

Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

International Nuclear Information System (INIS)

Li Lei; Zhou Wanting; Liu Huihua

2012-01-01

In this paper, an efficient physics-based method to estimate the saturated proton upset cross section for six-transistor (6T) silicon-on-insulator (SOI) static random access memory (SRAM) cells using layout and technology parameters is proposed. This method calculates the effects of radiation based on device physics. The simple method handles the problem with ease by SPICE simulations, which can be divided into two stages. At first, it uses a standard SPICE program to predict the cross section for recoiling heavy ions with linear energy transfer (LET) of 14 MeV-cm 2 /mg. Then, the predicted cross section for recoiling heavy ions with LET of 14 MeV-cm 2 /mg is used to estimate the saturated proton upset cross section for 6T SOI SRAM cells with a simple model. The calculated proton induced upset cross section based on this method is in good agreement with the test results of 6T SOI SRAM cells processed using 0.15 μm technology. (author)

Modeling of Single Event Transients With Dual Double-Exponential Current Sources: Implications for Logic Cell Characterization

Science.gov (United States)

Black, Dolores A.; Robinson, William H.; Wilcox, Ian Z.; Limbrick, Daniel B.; Black, Jeffrey D.

2015-08-01

Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. The parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.

NASA Electronic Parts and Packaging Field Programmable Gate Array Single Event Effects Test Guideline Update

Science.gov (United States)

Berg, Melanie D.; LaBel, Kenneth A.

2018-01-01

The following are updated or new subjects added to the FPGA SEE Test Guidelines manual: academic versus mission specific device evaluation, single event latch-up (SEL) test and analysis, SEE response visibility enhancement during radiation testing, mitigation evaluation (embedded and user-implemented), unreliable design and its affects to SEE Data, testing flushable architectures versus non-flushable architectures, intellectual property core (IP Core) test and evaluation (addresses embedded and user-inserted), heavy-ion energy and linear energy transfer (LET) selection, proton versus heavy-ion testing, fault injection, mean fluence to failure analysis, and mission specific system-level single event upset (SEU) response prediction. Most sections within the guidelines manual provide information regarding best practices for test structure and test system development. The scope of this manual addresses academic versus mission specific device evaluation and visibility enhancement in IP Core testing.

Upset due to a single particle caused propagated transients in a bulk CMOS microprocessor

International Nuclear Information System (INIS)

Leavy, J.F.; Hoffmann, L.F.; Shoran, R.W.; Johnson, M.T.

1991-01-01

This paper reports on data pattern advances observed in preset, single event upset (SEU) hardened clocked flip-flops, during static Cf-252 exposures on a bulk CMOS microprocessor, that were attributable to particle caused anomalous clock signals, or propagated transients. SPICE simulations established that particle strikes in the output nodes of a clock control logic flip-flop could produce transients of sufficient amplitude and duration to be accepted as legitimate pulses by clock buffers fed by the flip-flop's output nodes. The buffers would then output false clock pulses, thereby advancing the state of the present flip-flops. Masking the clock logic on one of the test chips made the flip-flop data advance cease, confirming the clock logic as the source of the SEU. By introducing N 2 gas, at reduced pressures, into the SEU test chamber to attenuate Cf-252 particle LET's, a 24-26 MeV-cm 2 /mg LET threshold was deduced. Subsequent tests, at the 88-inch cyclotron at Berkeley, established an LET threshold of 30 MeV-cm 2 /mg (283 MeV Cu at 0 degrees) for the generation of false clocks. Cyclotron SEU tests are considered definitive, while Cf-252 data usually is not. However, in this instance Cf-252 tests proved analytically useful, providing SEU characterization data that was both timely and inexpensive

Development of Single-Event Upset hardened programmable logic devices in deep submicron CMOS; Developpement de circuits logiques programmables resistants aux aleas logiques en technologie CMOS submicrometrique

Energy Technology Data Exchange (ETDEWEB)

Bonacini, S

2007-11-15

The electronics associated to the particle detectors of the Large Hadron Collider (LHC), under construction at CERN, will operate in a very harsh radiation environment. Commercial Off-The-Shelf (COTS) components cannot be used in the vicinity of particle collision due to their poor radiation tolerance. This thesis is a contribution to the effort to cover the need for radiation-tolerant SEU-robust (Single Event Upset) programmable components for application in high energy physics experiments. Two components are under development: a Programmable Logic Device (PLD) and a Field-Programmable Gate Array (FPGA). The PLD is a fuse-based, 10-input, 8-I/O general architecture device in 0.25 {mu}m CMOS technology. The FPGA under development is a 32*32 logic block array, equivalent to {approx} 25 k gates, in 0.13 {mu}m CMOS. The irradiation test results obtained in the CMOS 0.25 {mu}m technology demonstrate good robustness of the circuit up to an LET (Linear Energy Transfer) of 79.6 cm{sup 2}*MeV/mg, which make it suitable for the target environment. The CMOS 0.13 {mu}m circuit has showed robustness to an LET of 37.4 cm{sup 2}*MeV/mg in the static test mode and has increased sensitivity in the dynamic test mode. This work focused also on the research for an SEU-robust register in both the mentioned technologies. The SEU-robust register is employed as a user data flip-flop in the FPGA and PLD designs and as a configuration cell as well in the FPGA design.

SUPRA - Enhanced upset recovery simulation

NARCIS (Netherlands)

Groen, E.; Ledegang, W.; Field, J.; Smaili, H.; Roza, M.; Fucke, L.; Nooij, S.; Goman, M.; Mayrhofer, M.; Zaichik, L.E.; Grigoryev, M.; Biryukov, V.

2012-01-01

The SUPRA research project - Simulation of Upset Recovery in Aviation - has been funded by the European Union 7th Framework Program to enhance the flight simulation envelope for upset recovery simulation. Within the project an extended aerodynamic model, capturing the key aerodynamics during and

Sex differences in the events that elicit jealousy among homosexuals

OpenAIRE

Dijkstra, Pieternel; Groothof, Hinke A. K.; Poel, Gerda A.; Laverman, Teunis, T. G.; Schrier, Michiel; Buunk, Bram P.

2008-01-01

When individuals are asked which event would upset them more - a partner's emotional infidelity or a partner's sexual infidelity- among heterosexuals more men than women select a partner's sexual infidelity as the most upsetting event, whereas more more women than men select a partner's emotional infidelity as the most upsetting event. Because homosexuals' mating psychology is unlike that of heterosexuals, the present study examinend which of these two events is more upsetting in a sample of ...

NASA Electronic Parts and Packaging (NEPP) Field Programmable Gate Array (FPGA) Single Event Effects (SEE) Test Guideline Update

Science.gov (United States)

Berg, Melanie D.; LaBel, Kenneth A.

2018-01-01

The following are updated or new subjects added to the FPGA SEE Test Guidelines manual: academic versus mission specific device evaluation, single event latch-up (SEL) test and analysis, SEE response visibility enhancement during radiation testing, mitigation evaluation (embedded and user-implemented), unreliable design and its affects to SEE Data, testing flushable architectures versus non-flushable architectures, intellectual property core (IP Core) test and evaluation (addresses embedded and user-inserted), heavy-ion energy and linear energy transfer (LET) selection, proton versus heavy-ion testing, fault injection, mean fluence to failure analysis, and mission specific system-level single event upset (SEU) response prediction. Most sections within the guidelines manual provide information regarding best practices for test structure and test system development. The scope of this manual addresses academic versus mission specific device evaluation and visibility enhancement in IP Core testing.

Corrected multiple upsets and bit reversals for improved 1-s resolution measurements

International Nuclear Information System (INIS)

Brucker, G.J.; Stassinopoulos, E.G.; Stauffer, C.A.

1994-01-01

Previous work has studied the generation of single and multiple errors in control and irradiated static RAM samples (Harris 6504RH) which were exposed to heavy ions for relatively long intervals of time (minute), and read out only after the beam was shut off. The present investigation involved storing 4k x 1 bit maps every second during 1 min ion exposures at low flux rates of 10 3 ions/cm 2 -s in order to reduce the chance of two sequential ions upsetting adjacent bits. The data were analyzed for the presence of adjacent upset bit locations in the physical memory plane, which were previously defined to constitute multiple upsets. Improvement in the time resolution of these measurements has provided more accurate estimates of multiple upsets. The results indicate that the percentage of multiples decreased from a high of 17% in the previous experiment to less than 1% for this new experimental technique. Consecutive double and triple upsets (reversals of bits) were detected. These were caused by sequential ions hitting the same bit, with one or two reversals of state occurring in a 1-min run. In addition to these results, a status review for these same parts covering 3.5 years of imprint damage recovery is also presented

Application of reactors for testing neutron-induced upsets in commercial SRAMs

International Nuclear Information System (INIS)

Griffin, P.J.; Luera, T.F.; Sexton, F.W.; Cooper, P.J.; Karr, S.G.; Hash, G.L.; Fuller, E.

1997-01-01

Reactor neutron environments can be used to test/screen the sensitivity of unhardened commercial SRAMs to low-LET neutron-induced upset. Tests indicate both thermal/epithermal (< 1 keV) and fast neutrons can cause upsets in unhardened parts. Measured upset rates in reactor environments can be used to model the upset rate for arbitrary neutron spectra

Heavy ion microbeam system for study of single event effects

International Nuclear Information System (INIS)

Kamiya, Tomihiro; Utsunomiya, Nobuhiro; Minehara, Eiichi; Tanaka, Ryuichi; Ohmura, Miyoshi; Kohno, Kazuhiro; Iwamoto, Eiji.

1992-01-01

A high-energy heavy ion microbeam system has been developed and installed on a beam line of a 3 MV tandem electrostatic accelerator mainly for analysis of basic mechanism of single event upset (SEU) of semiconductor devices in spacecraft. The SEU is now the most serious problem for highly reliable spacecraft electronics system with long space mission. However, the mechanism has not been understood on the basis of microscopic process of SEU. The SEU phenomena depends not only upon hitting particles, but also upon the hit position on the microcircuit. To observe the transient charge pulse from a SEU, a single ion particle must hit exactly the desired position of the microcircuit. Such an experiment requires the microbeam spot size within 1 μm, the beam positioning accuracy within ±1 μm, and single ion hitting. The microbeam system has been designed to meet the above technical requirements. The system is equipped with two lens systems: one to control the target beam current in a wide range down to extremely low current without any change of the beam optics, and the other to focus heavy ion beams within a spot size of 1 μm. The final goal is to hit a microscopic target area with a single 15 MeV nickel ion. The beam spot size has been evaluated by Gaussian fitting of secondary electron profiles with microbeam scanning across the fine Cu mesh. The single ion detection has been also tested to generate a trigger signal for closing beam shutter to prevent further hits. This paper outlines the new microbeam system and describes methods to realize these techniques. (author)

Upset in response to a Sibling's partner's infidelities.

Science.gov (United States)

Michalski, Richard L; Shackelford, Todd K; Salmon, Catherine A

2007-03-01

Using data collected from people with at least one brother and one sister, and consistent with an evolutionary perspective, we find that older men and women (a) are more upset by a brother's partner's sexual infidelity than by her emotional infidelity and (b) are more upset by a sister's partner's emotional infidelity than by his sexual infidelity. There were no effects of participant sex or sex of in-law on upset over a sibling's partner's infidelities, but there was an effect of participant sex on reports of upset over one's own partner's infidelities. The results suggest that the key variable among older participants is the sex of the sibling or, correspondingly, the sex of the sibling's partner, as predicted from an evolutionary analysis of reproductive costs, and not the sex of the participant, as predicted from a socialization perspective. Discussion offers directions for future work on jealousy.

Applications Of Monte Carlo Radiation Transport Simulation Techniques For Predicting Single Event Effects In Microelectronics

International Nuclear Information System (INIS)

Warren, Kevin; Reed, Robert; Weller, Robert; Mendenhall, Marcus; Sierawski, Brian; Schrimpf, Ronald

2011-01-01

MRED (Monte Carlo Radiative Energy Deposition) is Vanderbilt University's Geant4 application for simulating radiation events in semiconductors. Geant4 is comprised of the best available computational physics models for the transport of radiation through matter. In addition to basic radiation transport physics contained in the Geant4 core, MRED has the capability to track energy loss in tetrahedral geometric objects, includes a cross section biasing and track weighting technique for variance reduction, and additional features relevant to semiconductor device applications. The crucial element of predicting Single Event Upset (SEU) parameters using radiation transport software is the creation of a dosimetry model that accurately approximates the net collected charge at transistor contacts as a function of deposited energy. The dosimetry technique described here is the multiple sensitive volume (MSV) model. It is shown to be a reasonable approximation of the charge collection process and its parameters can be calibrated to experimental measurements of SEU cross sections. The MSV model, within the framework of MRED, is examined for heavy ion and high-energy proton SEU measurements of a static random access memory.

The measurement and prediction of proton upset

Science.gov (United States)

Shimano, Y.; Goka, T.; Kuboyama, S.; Kawachi, K.; Kanai, T.

1989-12-01

The authors evaluate tolerance to proton upset for three kinds of memories and one microprocessor unit for space use by irradiating them with high-energy protons up to nearly 70 MeV. They predict the error rates of these memories using a modified semi-empirical equation of Bendel and Petersen (1983). A two-parameter method was used instead of Bendel's one-parameter method. There is a large difference between these two methods with regard to the fitted parameters. The calculation of upset rates in orbits were carried out using these parameters and NASA AP8MAC, AP8MIC. For the 93419 RAM the result of this calculation was compared with the in-orbit data taken on the MOS-1 spacecraft. A good agreement was found between the two sets of upset-rate data.

Sex differences in the events that elicit jealousy among homosexuals

NARCIS (Netherlands)

Dijkstra, Pieternel; Groothof, Hinke A. K.; Poel, Gerda A.; Laverman, Teunis, T. G.; Schrier, Michiel; Buunk, Bram P.

2008-01-01

When individuals are asked which event would upset them more - a partner's emotional infidelity or a partner's sexual infidelity- among heterosexuals more men than women select a partner's sexual infidelity as the most upsetting event, whereas more more women than men select a partner's emotional

UpSet: Visualization of Intersecting Sets

Science.gov (United States)

Lex, Alexander; Gehlenborg, Nils; Strobelt, Hendrik; Vuillemot, Romain; Pfister, Hanspeter

2016-01-01

Understanding relationships between sets is an important analysis task that has received widespread attention in the visualization community. The major challenge in this context is the combinatorial explosion of the number of set intersections if the number of sets exceeds a trivial threshold. In this paper we introduce UpSet, a novel visualization technique for the quantitative analysis of sets, their intersections, and aggregates of intersections. UpSet is focused on creating task-driven aggregates, communicating the size and properties of aggregates and intersections, and a duality between the visualization of the elements in a dataset and their set membership. UpSet visualizes set intersections in a matrix layout and introduces aggregates based on groupings and queries. The matrix layout enables the effective representation of associated data, such as the number of elements in the aggregates and intersections, as well as additional summary statistics derived from subset or element attributes. Sorting according to various measures enables a task-driven analysis of relevant intersections and aggregates. The elements represented in the sets and their associated attributes are visualized in a separate view. Queries based on containment in specific intersections, aggregates or driven by attribute filters are propagated between both views. We also introduce several advanced visual encodings and interaction methods to overcome the problems of varying scales and to address scalability. UpSet is web-based and open source. We demonstrate its general utility in multiple use cases from various domains. PMID:26356912

Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation

International Nuclear Information System (INIS)

Moreau, Y.; Gasiot, J.; Duzellier, S.

1995-01-01

Upsets caused by incident heavy ion on CMOS static RAM are studied here. Three dimensional device simulations, based on a description of a full epitaxial CMOS inverter, and experimental results are reported for evaluation of single and multiple bit error risk. The particular influences of hit location and incidence angle are examined

Review of Research On Guidance for Recovery from Pitch Axis Upsets

Science.gov (United States)

Harrison, Stephanie J.

2016-01-01

A literature review was conducted to identify past efforts in providing control guidance for aircraft upset recovery including stall recovery. Because guidance is integrally linked to the intended function of aircraft attitude awareness and upset recognition, it is difficult, if not impossible, to consider these issues separately. This literature review covered the aspects of instrumentation and display symbologies for attitude awareness, aircraft upset recognition, upset and stall alerting, and control guidance. Many different forms of symbology have been investigated including, but not limited to, pitch scale depictions, attitude indicator icons, horizon symbology, attitude recovery arrows, and pitch trim indicators. Past research on different visual and alerting strategies that provide advisories, cautions, and warnings to pilots before entering an unusual attitude (UA) are also discussed. Finally, potential control guidance for recovery from upset or unusual attitudes, including approach-to-stall and stall conditions, are reviewed. Recommendations for future research are made.

Upset Prediction in Friction Welding Using Radial Basis Function Neural Network

Directory of Open Access Journals (Sweden)

Wei Liu

2013-01-01

Full Text Available This paper addresses the upset prediction problem of friction welded joints. Based on finite element simulations of inertia friction welding (IFW, a radial basis function (RBF neural network was developed initially to predict the final upset for a number of welding parameters. The predicted joint upset by the RBF neural network was compared to validated finite element simulations, producing an error of less than 8.16% which is reasonable. Furthermore, the effects of initial rotational speed and axial pressure on the upset were investigated in relation to energy conversion with the RBF neural network. The developed RBF neural network was also applied to linear friction welding (LFW and continuous drive friction welding (CDFW. The correlation coefficients of RBF prediction for LFW and CDFW were 0.963 and 0.998, respectively, which further suggest that an RBF neural network is an effective method for upset prediction of friction welded joints.

In-Flight Observations of Long-Term Single Event Effect(SEE)Performance on Orbview-2 and Xray Timing Explorer(XTE)Solid State Recorders (SSR)

Science.gov (United States)

Poivey, Christian; Barth, Janet L.; LaBel, Ken A.; Gee, George; Safren, Harvey

2003-01-01

This paper presents Single Event Effect (SEE) in-flight data on Solid State Recorders (SSR) that have been collected over a long period of time for two NASA spacecraft: Orbview-2 and XTE. SEE flight data on solid-state memories give an opportunity to study the behavior in space of SEE sensitive commercial devices. The actual Single Event Upset (SEU) rates can be compared with the calculated rates based on environment models and ground test data. The SEE mitigation schemes can also be evaluated in actual implementation. A significant amount of data has already been published concerning observed SEE effects on memories in space. However, most of the data presented cover either a short period of time or a small number of devices. The data presented here has been collected on a large number of devices during several years. This allows statistically significant information about the effect of space weather fluctuations on SEU rates, and the effectiveness of SEE countermeasures used to be analyzed. Only Orbview-2 data is presented in this summary. XTE data will be included in the final paper.

An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

Science.gov (United States)

Titus, Jeffrey L.

2013-06-01

Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure modes in power MOSFETs [e.g., single-event gate rupture (SEGR) and single-event burnout (SEB)]. In 1996, two papers were published in a special issue of the IEEE Transaction on Nuclear Science [Johnson, Palau, Dachs, Galloway and Schrimpf, “A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, April. 1996], [Titus and Wheatley, “Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 533-545, Apr. 1996]. Those two papers continue to provide excellent information and references with regard to SEB and SEGR in vertical planar MOSFETs. This paper provides updated references/information and provides an updated perspective of SEB and SEGR in vertical planar MOSFETs as well as provides references/information to other device types that exhibit SEB and SEGR effects.

Modeling and control of a DC upset resistance butt welding process

NARCIS (Netherlands)

Naus, G.J.L.; Meulenberg, R.; Molengraft, van de M.J.G.

2007-01-01

This paper presents the analysis and synthesis of modeling and control of the DC upset resistance butt welding process used in rim production lines. A new control strategy is developed, enabling active control of the welding seam temperature and the upset size. As a result, set-up times and energy

Reactor internals design/analysis for normal, upset, and faulted conditions

International Nuclear Information System (INIS)

Burke, F.R.

1977-06-01

The analytical procedures used by Babcock and Wilcox to demonstrate the structural integrity of the 205-FA reactor internals are described. Analytical results are presented and compared to ASME Code allowable limits for Normal, Upset, and Faulted conditions. The particular faulted condition considered is a simultaneous loss-of-coolant accident and safe shutdown earthquake. The operating basis earthquake is addressed as an Upset condition

Upset Over Sexual versus Emotional Infidelity Among Gay, Lesbian, Bisexual, and Heterosexual Adults.

Science.gov (United States)

Frederick, David A; Fales, Melissa R

2016-01-01

One hypothesis derived from evolutionary perspectives is that men are more upset than women by sexual infidelity and women are more upset than men by emotional infidelity. The proposed explanation is that men, in contrast to women, face the risk of unwittingly investing in genetically unrelated offspring. Most studies, however, have relied on small college or community samples of heterosexual participants. We examined upset over sexual versus emotional jealousy among 63,894 gay, lesbian, bisexual, and heterosexual participants. Participants imagined which would upset them more: their partners having sex with someone else (but not falling in love with them) or their partners falling in love with someone else (but not having sex with them). Consistent with this evolutionary perspective, heterosexual men were more likely than heterosexual women to be upset by sexual infidelity (54 vs. 35 %) and less likely than heterosexual women to be upset by emotional infidelity (46 vs. 65 %). This gender difference emerged across age groups, income levels, history of being cheated on, history of being unfaithful, relationship type, and length. The gender difference, however, was limited to heterosexual participants. Bisexual men and women did not differ significantly from each other in upset over sexual infidelity (30 vs. 27 %), regardless of whether they were currently dating a man (35 vs. 29 %) or woman (28 vs. 20 %). Gay men and lesbian women also did not differ (32 vs. 34 %). The findings present strong evidence that a gender difference exists in a broad sample of U.S. adults, but only among heterosexuals.

Upset in Response to a Sibling’s Partner’s Infidelity

OpenAIRE

Dafni Hellstrand; Elisavet Chrysochoou

2015-01-01

Existing evidence suggests that the psychological design of romantic jealousy differs for men and women: Men are more likely than women to report greater upset in response to a partner’s sexual than emotional infidelity, whereas women are more likely than men to report greater upset in response to a partner’s emotional than sexual infidelity. However, the observed sex difference can be explained after the fact by both an evolutionary analysis of past reproductive costs and a social constructi...

Fabrication and properties of Y-Ba-Cu-O high Tc superconductor by upset-forging method

International Nuclear Information System (INIS)

Chang, Ho Jung; Kang, Kae Myung; Song, Jin Tae

1990-01-01

YBa 2 Cu 3 O 7-x oxide superconductors was fabricated by sintering process and upset-forging method, respectively, and microstructures and conduction properties were compared. There was no difference in crystal structure the (001) x-ray reflection presumably due to preferred crystal orientation of the YBa 2 Cu 3 O 7-x superconductor. Furthermore, the grain size of the 123-phase increased as the reduction ratio became larger during the upset-forging. The critical temperature for zero resistivity of both samples was almost the same, i.e., about 90K. These results have demonstrated the potential of producing YBa 2 Cu 3 O 7-x superconducting wire or tape effectively using a upset-forging method. The critical current density of the upset-forged sample, however, was lower than that of the sintered one, which fact might be ascribed to microcrack formation during fast upset-forging. (Author)

SEU Prediction from SET modeling using multi-node collection in bulk transistors and SRAMs down to the 65 nm technology node

International Nuclear Information System (INIS)

Artola, L.; Hubert, G.; Duzellier, S.; Artola, L.; Bezerra, F.; Warren, K.M.; Massengill, L.W.; Gaillardin, M.; Paillet, Ph.; Raine, M.; Girard, S.; Schrimpf, R.D.; Reed, R.A.; Weller, R.A.; Ahlbin, J.R.

2011-01-01

A new methodology of prediction for SEU is proposed based on SET modeling. The modeling of multi-node charge collection is performed using the ADDICT model for predicting single event transients and upsets in bulk transistors and SRAMs down to 65 nm. The predicted single event upset cross sections agree well with experimental data for SRAMs. (authors)

Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA

Science.gov (United States)

Tonfat, Jorge; Kastensmidt, Fernanda Lima; Artola, Laurent; Hubert, Guillaume; Medina, Nilberto H.; Added, Nemitala; Aguiar, Vitor A. P.; Aguirre, Fernando; Macchione, Eduardo L. A.; Silveira, Marcilei A. G.

2017-08-01

This paper shows the impact of low linear energy transfer heavy ions on the reliability of 28-nm Bulk static random access memory (RAM) cells from Artix-7 field-programmable gate array. Irradiation tests on the ground showed significant differences in the multiple bit upset cross section of configuration RAM and block RAM memory cells under various angles of incidence and rotation of the device. Experimental data are analyzed at transistor level by using the single-event effect prediction tool called multiscale single-event phenomenon prediction platform coupled with SPICE simulations.

Dynamic effect in ultrasonic assisted micro-upsetting

Science.gov (United States)

Presz, Wojciech

2018-05-01

The use of ultrasonic assistance in microforming is becoming more and more popular. Mainly due to the beneficial effect of vibrations on the flow of plastic deformation reported already in the 50s of the last century. The influence is of two types: surface and volume. The surface effect is mainly the reduction of friction forces, and volumetric is the impact on the dislocation movement and even on phase transitions. The work focuses on the dynamic aspect of vibration assisted microforming. The use of ultrasonic vibrations at a frequency of 20 kHz and an amplitude of 16 µm, in the micro-upsetting process of an aluminum sample resulted in a high concentration of strain on both ends of the sample - at 14% of the height on both sides. There was observed (in relation to deformations of the sample without vibrations) 150-250% increase and a 50% decrease in strain in the center of the sample. At the same time, the larger deformations occurred from the impact side of the punch. Analyzing the course of forces of the upsetting process in the loading and unloading phase as well as the process of breaking glass samples, the spring deflections of key system elements and their natural frequencies were determined or calculated. Based on the determined or calculated parameters of the test stand, it was shown that during the micro-upsetting process the punch may detach from the sample surface and this is the main reason for the phenomena occurring. Detach of the punch is also the cause of the observed instability of the measurement of force, which should be considered unbelievable in such a situation.

Multiple-Event, Single-Photon Counting Imaging Sensor

Science.gov (United States)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Experimental study of single event burnout and single event gate rupture in power MOSFETs and IGBT

International Nuclear Information System (INIS)

Tang Benqi; Wang Yanping; Geng Bin

2001-01-01

An experimental study was carried out to determine the single event burnout and single event gate rupture sensitivities in power MOSFETs and IGBT which were exposed to heavy ions from 252 Cf source. The test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism were presented. Current measurements have been performed with a specially designed circuit. The test results include the observed dependence upon applied drain or gate to source bias and versus with external capacitors and limited resistors

Microstructure and mechanical properties of resistance upset butt welded 304 austenitic stainless steel joints

International Nuclear Information System (INIS)

Sharifitabar, M.; Halvaee, A.; Khorshahian, S.

2011-01-01

Graphical abstract: Three different microstructural zones formed at different distances from the joint interface in resistance upset butt welding of 304 austenitic stainless steel. Highlights: → Evaluation of microstructure in resistance upset welding of 304 stainless steel. → Evaluation of welding parameters effects on mechanical properties of the joint. → Introducing the optimum welding condition for joining stainless steel bars. -- Abstract: Resistance upset welding (UW) is a widely used process for joining metal parts. In this process, current, time and upset pressure are three parameters that affect the quality of welded products. In the present research, resistance upset butt welding of 304 austenitic stainless steel and effect of welding power and upset pressure on microstructure, tensile strength and fatigue life of the joint were investigated. Microstructure of welds were studied using scanning electron microscopy (SEM). X-ray diffraction (XRD) analysis was used to distinguish the phase(s) that formed at the joint interface and in heat affected zone (HAZ). Energy dispersive spectroscopy (EDS) linked to the SEM was used to determine chemical composition of phases formed at the joint interface. Fatigue tests were performed using a pull-push fatigue test machine and the fatigue properties were analyzed drawing stress-number of cycles to failure (S-N) curves. Also tensile strength tests were performed. Finally tensile and fatigue fracture surfaces were studied by SEM. Results showed that there were three different microstructural zones at different distances from the joint interface and delta ferrite phase has formed in these regions. There was no precipitation of chromium carbide at the joint interface and in the HAZ. Tensile and fatigue strengths of the joint decreased with welding power. Increasing of upset pressure has also considerable influence on tensile strength of the joint. Fractography of fractured samples showed that formation of hot spots at

Equivalent properties of single event burnout induced by different sources

International Nuclear Information System (INIS)

Yang Shiyu; Cao Zhou; Da Daoan; Xue Yuxiong

2009-01-01

The experimental results of single event burnout induced by heavy ions and 252 Cf fission fragments in power MOSFET devices have been investigated. It is concluded that the characteristics of single event burnout induced by 252 Cf fission fragments is consistent to that in heavy ions. The power MOSFET in the 'turn-off' state is more susceptible to single event burnout than it is in the 'turn-on' state. The thresholds of the drain-source voltage for single event burnout induced by 173 MeV bromine ions and 252 Cf fission fragments are close to each other, and the burnout cross section is sensitive to variation of the drain-source voltage above the threshold of single event burnout. In addition, the current waveforms of single event burnouts induced by different sources are similar. Different power MOSFET devices may have different probabilities for the occurrence of single event burnout. (authors)

Statistics and methodology of multiple cell upset characterization under heavy ion irradiation

International Nuclear Information System (INIS)

Zebrev, G.I.; Gorbunov, M.S.; Useinov, R.G.; Emeliyanov, V.V.; Ozerov, A.I.; Anashin, V.S.; Kozyukov, A.E.; Zemtsov, K.S.

2015-01-01

Mean and partial cross-section concepts and their connections to multiplicity and statistics of multiple cell upsets (MCUs) in highly-scaled digital memories are introduced and discussed. The important role of the experimental determination of the upset statistics is emphasized. It was found that MCU may lead to quasi-linear dependence of cross-sections on linear energy transfer (LET). A new form of function for interpolation of mean cross-section dependences on LET has been proposed

A Model for Microcontroller Functionality Upset Induced by External Pulsed Electromagnetic Irradiation

Science.gov (United States)

2016-11-21

AFRL-RD-PS- AFRL-RD-PS- TN-2016-0003 TN-2016-0003 A Model for Microcontroller Functionality Upset Induced by External Pulsed Electromagnetic...TYPE Technical Note 3. DATES COVERED (From - To) 22-11-2015 – 21-11-2016 4. TITLE AND SUBTITLE A Model for Microcontroller Functionality Upset Induced by... microcontroller (µC) subjected to external irradiation by a narrowband electromagnetic (EM) pulse. In our model, the state of a µC is completely specified by

Upset in Response to a Sibling’s Partner’s Infidelity

Directory of Open Access Journals (Sweden)

Dafni Hellstrand

2015-08-01

Full Text Available Existing evidence suggests that the psychological design of romantic jealousy differs for men and women: Men are more likely than women to report greater upset in response to a partner’s sexual than emotional infidelity, whereas women are more likely than men to report greater upset in response to a partner’s emotional than sexual infidelity. However, the observed sex difference can be explained after the fact by both an evolutionary analysis of past reproductive costs and a social constructionist analysis of social and gender role training. Attempting to disentangle these competing perspectives, researchers have measured participants’ upset in response to a sibling’s or a child’s partner’s infidelities. In contrast to what a socialization perspective would predict, participants’ sex did not seem to affect their responses; the key variable was the sex of the sibling or the child, in line with a heuristic application of the evolutionary perspective. The present study attempted not only to test these competing hypotheses but also to extend previous work by involving participants with a gay or lesbian sibling and examining whether participants’ responses are triggered by their sibling’s or sibling’s partner’s sex. In line with an evolutionary perspective, participants’ sex did not assert an effect on their responses. The key variable seemed to be the sex of the sibling (rather than the sex of the sibling’s partner, with participants reporting greater levels of upset in response to the sexual than emotional infidelity of a gay brother’s partner and to the emotional than sexual infidelity of a lesbian sister’s partner. The ensuing discussion offers suggestions for future work on sex-specific triggers of jealousy.

Stability and performance analysis of a jump linear control system subject to digital upsets

Science.gov (United States)

Wang, Rui; Sun, Hui; Ma, Zhen-Yang

2015-04-01

This paper focuses on the methodology analysis for the stability and the corresponding tracking performance of a closed-loop digital jump linear control system with a stochastic switching signal. The method is applied to a flight control system. A distributed recoverable platform is implemented on the flight control system and subject to independent digital upsets. The upset processes are used to stimulate electromagnetic environments. Specifically, the paper presents the scenarios that the upset process is directly injected into the distributed flight control system, which is modeled by independent Markov upset processes and independent and identically distributed (IID) processes. A theoretical performance analysis and simulation modelling are both presented in detail for a more complete independent digital upset injection. The specific examples are proposed to verify the methodology of tracking performance analysis. The general analyses for different configurations are also proposed. Comparisons among different configurations are conducted to demonstrate the availability and the characteristics of the design. Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61403395), the Natural Science Foundation of Tianjin, China (Grant No. 13JCYBJC39000), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, the Tianjin Key Laboratory of Civil Aircraft Airworthiness and Maintenance in Civil Aviation of China (Grant No. 104003020106), and the Fund for Scholars of Civil Aviation University of China (Grant No. 2012QD21x).

Pulsed laser-induced SEU in integrated circuits

International Nuclear Information System (INIS)

Buchner, S.; Kang, K.; Stapor, W.J.; Campbell, A.B.; Knudson, A.R.; McDonald, P.; Rivet, S.

1990-01-01

The authors have used a pulsed picosecond laser to measure the threshold for single event upset (SEU) and single event latchup (SEL) for two different kinds of integrated circuits. The relative thresholds show good agreement with published ion upset data. The consistency of the results together with the advantages of using a laser system suggest that the pulsed laser can be used for SEU/SEL hardness assurance of integrated circuits

Sex differences in the events that elicit jealousy among homosexuals

NARCIS (Netherlands)

Dijkstra, Pieternel; Groothof, H.; Poel, G.A.; Haverman, T.TG; Buunk, Abraham (Bram)

When individuals ale asked which event would upset them more-a partner's emotional infidelity or a partner's sexual infidelity-among heterosexuals more men than women select a partner's sexual infidelity as the most distressing event, whereas more women than men select a partner's emotional

Investigation of HZETRN 2010 as a Tool for Single Event Effect Qualification of Avionics Systems

Science.gov (United States)

Rojdev, Kristina; Koontz, Steve; Atwell, William; Boeder, Paul

2014-01-01

NASA's future missions are focused on long-duration deep space missions for human exploration which offers no options for a quick emergency return to Earth. The combination of long mission duration with no quick emergency return option leads to unprecedented spacecraft system safety and reliability requirements. It is important that spacecraft avionics systems for human deep space missions are not susceptible to Single Event Effect (SEE) failures caused by space radiation (primarily the continuous galactic cosmic ray background and the occasional solar particle event) interactions with electronic components and systems. SEE effects are typically managed during the design, development, and test (DD&T) phase of spacecraft development by using heritage hardware (if possible) and through extensive component level testing, followed by system level failure analysis tasks that are both time consuming and costly. The ultimate product of the SEE DD&T program is a prediction of spacecraft avionics reliability in the flight environment produced using various nuclear reaction and transport codes in combination with the component and subsystem level radiation test data. Previous work by Koontz, et al.1 utilized FLUKA, a Monte Carlo nuclear reaction and transport code, to calculate SEE and single event upset (SEU) rates. This code was then validated against in-flight data for a variety of spacecraft and space flight environments. However, FLUKA has a long run-time (on the order of days). CREME962, an easy to use deterministic code offering short run times, was also compared with FLUKA predictions and in-flight data. CREME96, though fast and easy to use, has not been updated in several years and underestimates secondary particle shower effects in spacecraft structural shielding mass. Thus, this paper will investigate the use of HZETRN 20103, a fast and easy to use deterministic transport code, similar to CREME96, that was developed at NASA Langley Research Center primarily for

Multi-Unit Initiating Event Analysis for a Single-Unit Internal Events Level 1 PSA

Energy Technology Data Exchange (ETDEWEB)

Kim, Dong San; Park, Jin Hee; Lim, Ho Gon [KAERI, Daejeon (Korea, Republic of)

2016-05-15

The Fukushima nuclear accident in 2011 highlighted the importance of considering the risks from multi-unit accidents at a site. The ASME/ANS probabilistic risk assessment (PRA) standard also includes some requirements related to multi-unit aspects, one of which (IE-B5) is as follows: 'For multi-unit sites with shared systems, DO NOT SUBSUME multi-unit initiating events if they impact mitigation capability [1].' However, the existing single-unit PSA models do not explicitly consider multi-unit initiating events and hence systems shared by multiple units (e.g., alternate AC diesel generator) are fully credited for the single unit and ignores the need for the shared systems by other units at the same site [2]. This paper describes the results of the multi-unit initiating event (IE) analysis performed as a part of the at-power internal events Level 1 probabilistic safety assessment (PSA) for an OPR1000 single unit ('reference unit'). In this study, a multi-unit initiating event analysis for a single-unit PSA was performed, and using the results, dual-unit LOOP initiating event was added to the existing PSA model for the reference unit (OPR1000 type). Event trees were developed for dual-unit LOOP and dual-unit SBO which can be transferred from dual- unit LOOP. Moreover, CCF basic events for 5 diesel generators were modelled. In case of simultaneous SBO occurrences in both units, this study compared two different assumptions on the availability of the AAC D/G. As a result, when dual-unit LOOP initiating event was added to the existing single-unit PSA model, the total CDF increased by 1∼ 2% depending on the probability that the AAC D/G is available to a specific unit in case of simultaneous SBO in both units.

SEU ground and flight data in static random access memories

International Nuclear Information System (INIS)

Liu, J.; Duan, J.L.; Hou, M.D.; Sun, Y.M.; Yao, H.J.; Mo, D.; Zhang, Q.X.; Wang, Z.G.; Jin, Y.F.; Cai, J.R.; Ye, Z.H.; Han, J.W.; Lin, Y.L.; Huang, Z.

2006-01-01

This paper presents the vulnerabilities of single event effects (SEEs) simulated by heavy ions on ground and observed on SJ-5 research satellite in space for static random access memories (SRAMs). A single event upset (SEU) prediction code has been used to estimate the proton-induced upset rates based on the ground test curve of SEU cross-section versus heavy ion linear energy transfer (LET). The result agrees with that of the flight data

European accelerator facilities for single event effects testing

Energy Technology Data Exchange (ETDEWEB)

Adams, L; Nickson, R; Harboe-Sorensen, R [ESA-ESTEC, Noordwijk (Netherlands); Hajdas, W; Berger, G

1997-03-01

Single event effects are an important hazard to spacecraft and payloads. The advances in component technology, with shrinking dimensions and increasing complexity will give even more importance to single event effects in the future. The ground test facilities are complex and expensive and the complexities of installing a facility are compounded by the requirement that maximum control is to be exercised by users largely unfamiliar with accelerator technology. The PIF and the HIF are the result of experience gained in the field of single event effects testing and represent a unique collaboration between space technology and accelerator experts. Both facilities form an essential part of the European infrastructure supporting space projects. (J.P.N.)

Mitigating bit flips or single event upsets in epilepsy neurostimulators

Directory of Open Access Journals (Sweden)

Alice X. Dong

2016-01-01

Conclusions: Cosmic radiation can threaten RAM and settings of neurostimulators; neuromodulation teams and device designers need to take this threat into account when designing multifunctional neuromodulation systems.

Test CMOS/SOS RAM for transient radiation upset comparative research and failure analysis

International Nuclear Information System (INIS)

Nikiforov, A.Y.; Poljakov, I.V.

1995-01-01

The test Complementary Metal-Oxide-Semiconductor/Silicon-on-Sapphire Random Access Memory (CMOS/SOS RAM) with eight types of memory cells was designed and tested at high dose rates with a flash X-ray machine and laser simulator. The memory cell (MC) design with additional transistors and RC-chain was found to be upset free up to 2 x 10 12 rad(Si)/s. An inversion effect was discovered in which almost 100% logic upset was observed in poorly protected memory cell arrays at very high dose rates

The effect of a single recombination event

DEFF Research Database (Denmark)

Schierup, Mikkel Heide; Jensen, Thomas Mailund; Wiuf, Carsten

We investigate the variance in how visible a single recombination event is in a SNP data set as a function of the type of recombination event and its age. Data is simulated under the coalescent with recombination and inference is by the popular composite likelihood methods. The major determinant...

Minimalist fault-tolerance techniques for mitigating single-event effects in non-radiation-hardened microcontrollers

Science.gov (United States)

Caldwell, Douglas Wyche

Commercial microcontrollers--monolithic integrated circuits containing microprocessor, memory and various peripheral functions--such as are used in industrial, automotive and military applications, present spacecraft avionics system designers an appealing mix of higher performance and lower power together with faster system-development time and lower unit costs. However, these parts are not radiation-hardened for application in the space environment and Single-Event Effects (SEE) caused by high-energy, ionizing radiation present a significant challenge. Mitigating these effects with techniques which require minimal additional support logic, and thereby preserve the high functional density of these devices, can allow their benefits to be realized. This dissertation uses fault-tolerance to mitigate the transient errors and occasional latchups that non-hardened microcontrollers can experience in the space radiation environment. Space systems requirements and the historical use of fault-tolerant computers in spacecraft provide context. Space radiation and its effects in semiconductors define the fault environment. A reference architecture is presented which uses two or three microcontrollers with a combination of hardware and software voting techniques to mitigate SEE. A prototypical spacecraft function (an inertial measurement unit) is used to illustrate the techniques and to explore how real application requirements impact the fault-tolerance approach. Low-cost approaches which leverage features of existing commercial microcontrollers are analyzed. A high-speed serial bus is used for voting among redundant devices and a novel wire-OR output voting scheme exploits the bidirectional controls of I/O pins. A hardware testbed and prototype software were constructed to evaluate two- and three-processor configurations. Simulated Single-Event Upsets (SEUs) were injected at high rates and the response of the system monitored. The resulting statistics were used to evaluate

Are Sexual and Emotional Infidelity Equally Upsetting to Men and Women? Making Sense of Forced-Choice Responses

Directory of Open Access Journals (Sweden)

David A. Lishner

2008-10-01

Full Text Available Forced-choice measures that assess reactions to imagined sexual and emotional infidelity are ubiquitous in studies testing the Jealousy as a Specific Innate Module (JSIM model. One potential problem with such measures is that they fail to identify respondents who find both forms of infidelity equally upsetting. To examine this issue, an experiment was conducted in which two groups of participants imagined a romantic infidelity after which participants in the first group used a traditional forced-choice measure to indicate whether they found sexual or emotional infidelity more upsetting. Participants in the second group instead used a modified forced-choice measure that allowed them also to indicate whether they found both forms of infidelity equally upsetting. Consistent with previous research, those given the traditional forced-choice measure tended to respond in a manner that supported the JSIM model. However, the majority of participants given the modified measure indicated that both forms of infidelity were equally upsetting.

Solid-state resistance upset welding: A process with unique advantages for advanced materials

International Nuclear Information System (INIS)

Kanne, W.R. Jr.

1993-01-01

Solid-state resistance upset welding is suitable for joining many alloys that are difficult to weld using fusion processes. Since no melting takes place, the weld metal retains many of the characteristics of the base metal. Resulting welds have a hot worked structure, and thereby have higher strength than fusion welds in the same mate. Since the material being joined is not melted, compositional gradients are not introduced, second phase materials are minimally disrupted, and minor alloying elements, do not affect weldability. Solid-state upset welding has been adapted for fabrication of structures considered very large compared to typical resistance welding applications. The process has been used for closure of capsules, small vessels, and large containers. Welding emphasis has been on 304L stainless steel, the material for current applications. Other materials have, however, received enough attention to have demonstrated capability for joining alloys that are not readily weldable using fusion welding methods. A variety of other stainless steels (including A-286), superalloys (including TD nickel), refractory metals (including tungsten), and aluminum alloys (including 2024) have been successfully upset welded

Upset Prevention and Recovery for Unimpaired and Impaired Aircraft, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — The objective of the project is the development of an on-board envelope estimation, protection and upset recovery tool to address loss of control incidents in...

Single event burnout sensitivity of embedded field effect transistors

International Nuclear Information System (INIS)

Koga, R.; Crain, S.H.; Crawford, K.B.; Yu, P.; Gordon, M.J.

1999-01-01

Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described

Single event burnout sensitivity of embedded field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Koga, R.; Crain, S.H.; Crawford, K.B.; Yu, P.; Gordon, M.J.

1999-12-01

Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.

The educational inclusion of the students with upsets of the oral communication

Directory of Open Access Journals (Sweden)

Merling Murguia Moré

2015-09-01

Full Text Available The educational inclusion imposes challenges to the National System of Education, to optimize the attention to the students with upsets of the oral communication. Is the objective of the article to share the design of an investigation that assists to the scientific problem how to contribute to the improvement of the educational inclusion of the students with upsets of the oral communication? The employment of the investigation-action-participativa it drives to the execution of the objective related with the construction of a pedagogic model for the improvement of this process. The results of the investigation will constitute a necessary contribution to the educational inclusion in the National System of Education

Crystal ball single event display

International Nuclear Information System (INIS)

Grosnick, D.; Gibson, A.; Allgower, C.; Alyea, J.; Argonne National Lab., IL

1997-01-01

The Single Event Display (SED) is a routine that is designed to provide information graphically about a triggered event within the Crystal Ball. The SED is written entirely in FORTRAN and uses the CERN-based HICZ graphing package. The primary display shows the amount of energy deposited in each of the NaI crystals on a Mercator-like projection of the crystals. Ten different shades and colors correspond to varying amounts of energy deposited within a crystal. Information about energy clusters is displayed on the crystal map by outlining in red the thirteen (or twelve) crystals contained within a cluster and assigning each cluster a number. Additional information about energy clusters is provided in a series of boxes containing useful data about the energy distribution among the crystals within the cluster. Other information shown on the event display include the event trigger type and data about π o 's and η's formed from pairs of clusters as found by the analyzer. A description of the major features is given, along with some information on how to install the SED into the analyzer

Investigation and control of factors influencing resistance upset butt welding.

NARCIS (Netherlands)

Kerstens, N.F.H.

2010-01-01

The purpose of this work is to investigate the factors influencing the resistance upset butt welding process to obtain an understanding of the metal behaviour and welding process characteristics, so that new automotive steels can be welded with reduced development time and fewer failures in

Broad Beam and Ion Microprobe Studies of Single-Event Upsets in High Speed 0.18micron Silicon Germanium Heterojunction Bipolar Transistors and Circuits

Science.gov (United States)

Reed, Robert A.; Marshall, Paul W.; Pickel, Jim; Carts, Martin A.; Irwin, TIm; Niu, Guofu; Cressler, John; Krithivasan, Ramkumar; Fritz, Karl; Riggs, Pam

2003-01-01

SiGe based technology is widely recognized for its tremendous potential to impact the high speed microelectronic industry, and therefore the space industry, by monolithic incorporation of low power complementary logic with extremely high speed SiGe Heterojunction Bipolar Transistor (HBT) logic. A variety of studies have examined the ionizing dose, displacement damage and single event characteristics, and are reported. Accessibility to SiGe through an increasing number of manufacturers adds to the importance of understanding its intrinsic radiation characteristics, and in particular the single event effect (SEE) characteristics of the high bandwidth HBT based circuits. IBM is now manufacturing in its 3rd generation of their commercial SiGe processes, and access is currently available to the first two generations (known as and 6HP) through the MOSIS shared mask services with anticipated future release of the latest (7HP) process. The 5 HP process is described and is characterized by a emitter spacing of 0.5 micron and a cutoff frequency ff of 50 GHz, whereas the fully scaled 7HP HBT employs a 0.18 micron emitter and has an fT of 120 GHz. Previous investigations have the examined SEE response of 5 HP HBT circuits through both circuit testing and modeling. Charge collection modeling studies in the 5 H P process have also been conducted, but to date no measurements have been reported of charge collection in any SiGe HBT structures. Nor have circuit models for charge collection been developed in any version other than the 5 HP HBT structure. Our investigation reports the first indications of both charge collection and circuit response in IBM s 7HP-based SiGe process. We compare broad beam heavy ion SEU test results in a fully function Pseudo-Random Number (PRN) sequence generator up to frequencies of 12 Gbps versus effective LET, and also report proton test results in the same circuit. In addition, we examine the charge collection characteristics of individual 7HP HBT

upSET, the Drosophila homologue of SET3, Is Required for Viability and the Proper Balance of Active and Repressive Chromatin Marks

Directory of Open Access Journals (Sweden)

Kyle A. McElroy

2017-02-01

Full Text Available Chromatin plays a critical role in faithful implementation of gene expression programs. Different post-translational modifications (PTMs of histone proteins reflect the underlying state of gene activity, and many chromatin proteins write, erase, bind, or are repelled by, these histone marks. One such protein is UpSET, the Drosophila homolog of yeast Set3 and mammalian KMT2E (MLL5. Here, we show that UpSET is necessary for the proper balance between active and repressed states. Using CRISPR/Cas-9 editing, we generated S2 cells that are mutant for upSET. We found that loss of UpSET is tolerated in S2 cells, but that heterochromatin is misregulated, as evidenced by a strong decrease in H3K9me2 levels assessed by bulk histone PTM quantification. To test whether this finding was consistent in the whole organism, we deleted the upSET coding sequence using CRISPR/Cas-9, which we found to be lethal in both sexes in flies. We were able to rescue this lethality using a tagged upSET transgene, and found that UpSET protein localizes to transcriptional start sites (TSS of active genes throughout the genome. Misregulated heterochromatin is apparent by suppressed position effect variegation of the wm4 allele in heterozygous upSET-deleted flies. Using nascent-RNA sequencing in the upSET-mutant S2 lines, we show that this result applies to heterochromatin genes generally. Our findings support a critical role for UpSET in maintaining heterochromatin, perhaps by delimiting the active chromatin environment.

Direct Observation of Asperity Deformation of Specimen with Random Rough Surface in Upsetting Process

DEFF Research Database (Denmark)

Azushima, A.; Kuba, S.; Tani, S.

2004-01-01

The trapping behavior of liquid lubricant and contact behavior of asperities at the workpiece-tool interface during upsetting and indentation are observed directly using a compression subpress which consists of a transparent die made of sapphire, a microscope with a CCD camera and a video system....... The experiments are carried out without lubricant and with lubricant. Specimens used are commercially pure A1100 Aluminum with a random rough surface. From this observation, the change in the fraction of real contact area is measured by an image processor. The real contact area ratios in upsetting experiment...

Fast recognition of single molecules based on single-event photon statistics

International Nuclear Information System (INIS)

Dong Shuangli; Huang Tao; Liu Yuan; Wang Jun; Zhang Guofeng; Xiao Liantuan; Jia Suotang

2007-01-01

Mandel's Q parameter, which is determined from single-event photon statistics, provides an alternative way to recognize single molecules with fluorescence detection, other than the second-order correlation function. It is shown that the Q parameter of an assumed ideal double-molecule fluorescence with the same average photon number as that of the sample fluorescence can act as the criterion for single-molecule recognition. The influence of signal-to-background ratio and the error estimates for photon statistics are also presented. We have applied this method to ascertain single Cy5 dye molecules within hundreds of milliseconds

Optimization of resistively hardened latches

International Nuclear Information System (INIS)

Gagne, G.; Savaria, Y.

1990-01-01

The design of digital circuits tolerant to single-event upsets is considered. The results of a study are presented on which an analytical model was used to predict the behavior of a standard resistively hardened latch. It is shown that a worst case analysis for all possible single-event upset situations (on the latch or in the logic) can be derived from studying the effects of a transient disturbed write cycle. The existence of an intrinsic minimum write period to tolerate a transient of a given duration is also demonstrated

High electrical resistivity Nd-Fe-B die-upset magnet doped with eutectic DyF3–LiF salt mixture

Directory of Open Access Journals (Sweden)

K. M. Kim

2017-05-01

Full Text Available Nd-Fe-B-type die-upset magnet with high electrical resistivity was prepared by doping of eutectic DyF3–LiF salt mixture. Mixture of melt-spun Nd-Fe-B flakes (MQU-F: Nd13.6Fe73.6Co6.6Ga0.6B5.6 and eutectic binary (DyF3–LiF salt (25 mol% DyF3 – 75 mol% LiF was hot-pressed and then die-upset. By adding the eutectic salt mixture (> 4 wt%, electrical resistivity of the die-upset magnet was enhanced to over 400 μΩ.cm compared to 190 μΩ.cm of the un-doped magnet. Remarkable enhancement of the electrical resistivity was attributed to homogeneous and continuous coverage of the interface between flakes by the easily melted eutectic salt dielectric mixture. It was revealed that active substitution of the Nd atoms in neighboring flakes by the Dy atoms from the added (DyF3–LiF salt mixture had occurred during such a quick thermal processing of hot-pressing and die-upsetting. This Dy substitution led to coercivity enhancement in the die-upset magnet doped with the eutectic (DyF3–LiF salt mixture. Coercivity and remanence of the die-upset magnet doped with (DyF3–LiF salt mixture was as good as those of the DyF3-doped magnet.

The Single Event Upset (SEU) response to 590 MeV protons

Science.gov (United States)

Nichols, D. K.; Price, W. E.; Smith, L. S.; Soli, G. A.

1984-01-01

The presence of high-energy protons in cosmic rays, solar flares, and trapped radiation belts around Jupiter poses a threat to the Galileo project. Results of a test of 10 device types (including 1K RAM, 4-bit microP sequencer, 4-bit slice, 9-bit data register, 4-bit shift register, octal flip-flop, and 4-bit counter) exposed to 590 MeV protons at the Swiss Institute of Nuclear Research are presented to clarify the picture of SEU response to the high-energy proton environment of Jupiter. It is concluded that the data obtained should remove the concern that nuclear reaction products generated by protons external to the device can cause significant alteration in the device SEU response. The data also show only modest increases in SEU cross section as proton energies are increased up to the upper limits of energy for both the terrestrial and Jovian trapped proton belts.

Crying without a cause and being easily upset in two-year-olds: heritability and predictive power of behavioral problems.

Science.gov (United States)

Groen-Blokhuis, Maria M; Middeldorp, Christel M; M van Beijsterveldt, Catharina E; Boomsma, Dorret I

2011-10-01

In order to estimate the influence of genetic and environmental factors on 'crying without a cause' and 'being easily upset' in 2-year-old children, a large twin study was carried out. Prospective data were available for ~18,000 2-year-old twin pairs from the Netherlands Twin Register. A bivariate genetic analysis was performed using structural equation modeling in the Mx software package. The influence of maternal personality characteristics and demographic and lifestyle factors was tested to identify specific risk factors that may underlie the shared environment of twins. Furthermore, it was tested whether crying without a cause and being easily upset were predictive of later internalizing, externalizing and attention problems. Crying without a cause yielded a heritability estimate of 60% in boys and girls. For easily upset, the heritability was estimated at 43% in boys and 31% in girls. The variance explained by shared environment varied between 35% and 63%. The correlation between crying without a cause and easily upset (r = .36) was explained both by genetic and shared environmental factors. Birth cohort, gestational age, socioeconomic status, parental age, parental smoking behavior and alcohol use during pregnancy did not explain the shared environmental component. Neuroticism of the mother explained a small proportion of the additive genetic, but not of the shared environmental effects for easily upset. Crying without a cause and being easily upset at age 2 were predictive of internalizing, externalizing and attention problems at age 7, with effect sizes of .28-.42. A large influence of shared environmental factors on crying without a cause and easily upset was detected. Although these effects could be specific to these items, we could not explain them by personality characteristics of the mother or by demographic and lifestyle factors, and we recognize that these effects may reflect other maternal characteristics. A substantial influence of genetic factors

Development and Flight Testing of an Automated Upset Recovery System, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Loss of control (LOC) due to upset is one of the main causes of accidents in manned aircraft and is already emerging as a significant causal factor in unmanned...

Final results of the supra project : Improved Simulation of Upset Recovery

NARCIS (Netherlands)

Fucke, L.; Groen, E.; Goman, M.; Abramov, N.; Wentink, M.; Nooij, S.; Zaichik, L.E.; Khrabrov, A.

2012-01-01

The objective of the European research project SUPRA (Simulation of Upset Recovery in Aviation) is to develop technologies that eventually contribute to a reduction of risk of Loss of control - in flight (LOC-I) accidents, today's major cause of fatal accidents in commercial aviation. To this end

CMOS/SOS RAM transient radiation upset and ''inversion'' effect investigation

International Nuclear Information System (INIS)

Nikiforov, A.Y.; Poljakov, I.V.

1996-01-01

The Complementary Metal-Oxide-Semiconductor/Silicon-on-Sapphire Random Access Memory (CMOS/SOS RAM) transient upset and inversion effect were investigated with pulsed laser, pulsed voltage generator and low-intensity light simulators. It was found that the inversion of information occurs due to memory cell photocurrents simultaneously with the power supply voltage drop transfer to memory cells outputs

Dynamics Modeling and Simulation of Large Transport Airplanes in Upset Conditions

Science.gov (United States)

Foster, John V.; Cunningham, Kevin; Fremaux, Charles M.; Shah, Gautam H.; Stewart, Eric C.; Rivers, Robert A.; Wilborn, James E.; Gato, William

2005-01-01

As part of NASA's Aviation Safety and Security Program, research has been in progress to develop aerodynamic modeling methods for simulations that accurately predict the flight dynamics characteristics of large transport airplanes in upset conditions. The motivation for this research stems from the recognition that simulation is a vital tool for addressing loss-of-control accidents, including applications to pilot training, accident reconstruction, and advanced control system analysis. The ultimate goal of this effort is to contribute to the reduction of the fatal accident rate due to loss-of-control. Research activities have involved accident analyses, wind tunnel testing, and piloted simulation. Results have shown that significant improvements in simulation fidelity for upset conditions, compared to current training simulations, can be achieved using state-of-the-art wind tunnel testing and aerodynamic modeling methods. This paper provides a summary of research completed to date and includes discussion on key technical results, lessons learned, and future research needs.

Destructive Single-Event Effects in Diodes

Science.gov (United States)

Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

2017-01-01

In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

Ductile failure in upsetting of a rapid-solidification-processed aluminium alloy

NARCIS (Netherlands)

Habraken, F.A.C.M.; Dautzenberg, J.H.

1993-01-01

Cold upset-tests have been performed on a Rapid Solidification Processed (RSP) aluminium-alloy, produced by the ‘melt-spun ribbons’-process out of 70% car-scrap and 30% primary scrap. The ribbons are hot extruded, resulting in 29 mm diameter bar. Its properties regarding plastic flow and fracture

Single Event Burnout in DC-DC Converters for the LHC Experiments

Energy Technology Data Exchange (ETDEWEB)

Claudio H. Rivetta et al.

2001-09-24

High voltage transistors in DC-DC converters are prone to catastrophic Single Event Burnout in the LHC radiation environment. This paper presents a systematic methodology to analyze single event effects sensitivity in converters and proposes solutions based on de-rating input voltage and output current or voltage.

Event-by-event simulation of single-neutron experiments to test uncertainty relations

International Nuclear Information System (INIS)

Raedt, H De; Michielsen, K

2014-01-01

Results from a discrete-event simulation of a recent single-neutron experiment that tests Ozawa's generalization of Heisenberg's uncertainty relation are presented. The event-based simulation algorithm reproduces the results of the quantum theoretical description of the experiment but does not require the knowledge of the solution of a wave equation, nor does it rely on detailed concepts of quantum theory. In particular, the data from these non-quantum simulations satisfy uncertainty relations derived in the context of quantum theory. (paper)

Direct observation of asperity deformation of specimens with random rough surfaces in upsetting and indentation processes

DEFF Research Database (Denmark)

Azushima, A.; Kuba, S.; Tani, S.

2006-01-01

The trapping behavior of liquid lubricant and contact behavior of asperities at the workpiece-tool interface during upsetting and indentation are observed directly using a compression subpress which consists of a transparent die made of sapphire, a microscope with a CCD camera and a video system....... The experiments are carried out without lubricant and with lubricant. Specimens used are commercially pure A1100 aluminum with a random rough surface. From these observations, the change in the fraction of real contact area is measured by an image processor. The real contact area ratios in upsetting experiments...

Modeling and simulation of single-event effect in CMOS circuit

International Nuclear Information System (INIS)

Yue Suge; Zhang Xiaolin; Zhao Yuanfu; Liu Lin; Wang Hanning

2015-01-01

This paper reviews the status of research in modeling and simulation of single-event effects (SEE) in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device (direct ionization and indirect ionization) are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices (bipolar transistor effect, charge sharing effect) and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients (SETs) in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed. (review)

Adult eyewitness memory for single versus repeated traumatic events

NARCIS (Netherlands)

Theunissen, T.P.M.; Meyer, T.; Memon, A.; Weinsheimer, C.C.

2017-01-01

Reports from individuals who have witnessed multiple, similar emotional events may differ from reports from witnesses of only a single event. To test this, we had participants (N = 65) view a video of a road traffic accident. Half of the participants saw two additional (similar) aversive films.

The magnitude and effects of extreme solar particle events

Directory of Open Access Journals (Sweden)

Jiggens Piers

2014-06-01

Full Text Available The solar energetic particle (SEP radiation environment is an important consideration for spacecraft design, spacecraft mission planning and human spaceflight. Herein is presented an investigation into the likely severity of effects of a very large Solar Particle Event (SPE on technology and humans in space. Fluences for SPEs derived using statistical models are compared to historical SPEs to verify their appropriateness for use in the analysis which follows. By combining environment tools with tools to model effects behind varying layers of spacecraft shielding it is possible to predict what impact a large SPE would be likely to have on a spacecraft in Near-Earth interplanetary space or geostationary Earth orbit. Also presented is a comparison of results generated using the traditional method of inputting the environment spectra, determined using a statistical model, into effects tools and a new method developed as part of the ESA SEPEM Project allowing for the creation of an effect time series on which statistics, previously applied to the flux data, can be run directly. The SPE environment spectra is determined and presented as energy integrated proton fluence (cm−2 as a function of particle energy (in MeV. This is input into the SHIELDOSE-2, MULASSIS, NIEL, GRAS and SEU effects tools to provide the output results. In the case of the new method for analysis, the flux time series is fed directly into the MULASSIS and GEMAT tools integrated into the SEPEM system. The output effect quantities include total ionising dose (in rads, non-ionising energy loss (MeV g−1, single event upsets (upsets/bit and the dose in humans compared to established limits for stochastic (or cancer-causing effects and tissue reactions (such as acute radiation sickness in humans given in grey-equivalent and sieverts respectively.

Development of Guidelines for Use of Proton Single-Event Test Data to Bound Single-Event Effect Susceptibility Due to Light Ions

Data.gov (United States)

National Aeronautics and Space Administration — Conventional methods for Single-Event Effects (SEE) Hardness Assurance have proven difficult to adapt to Explorer, Cubesat and other risk tolerant platforms with...

Near bed suspended sediment flux by single turbulent events

Science.gov (United States)

Amirshahi, Seyed Mohammad; Kwoll, Eva; Winter, Christian

2018-01-01

The role of small scale single turbulent events in the vertical mixing of near bed suspended sediments was explored in a shallow shelf sea environment. High frequency velocity and suspended sediment concentration (SSC; calibrated from the backscatter intensity) were collected using an Acoustic Doppler Velocimeter (ADV). Using quadrant analysis, the despiked velocity time series was divided into turbulent events and small background fluctuations. Reynolds stress and Turbulent Kinetic Energy (TKE) calculated from all velocity samples, were compared to the same turbulent statistics calculated only from velocity samples classified as turbulent events (Reevents and TKEevents). The comparison showed that Reevents and TKEevents was increased 3 and 1.6 times, respectively, when small background fluctuations were removed and that the correlation with SSC for TKE could be improved through removal of the latter. The correlation between instantaneous vertical turbulent flux (w ‧) and SSC fluctuations (SSC ‧) exhibits a tidal pattern with the maximum correlation at peak ebb and flood currents, when strong turbulent events appear. Individual turbulent events were characterized by type, strength, duration and length. Cumulative vertical turbulent sediment fluxes and average SSC associated with individual turbulent events were calculated. Over the tidal cycle, ejections and sweeps were the most dominant events, transporting 50% and 36% of the cumulative vertical turbulent event sediment flux, respectively. Although the contribution of outward interactions to the vertical turbulent event sediment flux was low (11%), single outward interaction events were capable of inducing similar SSC ‧ as sweep events. The results suggest that on time scales of tens of minutes to hours, TKE may be appropriate to quantify turbulence in sediment transport studies, but that event characteristics, particular the upward turbulent flux need to be accounted for when considering sediment transport

Irradiation setup at the U-120M cyclotron facility

Czech Academy of Sciences Publication Activity Database

Křížek, Filip; Ferencei, Jozef; Matlocha, Tomáš; Pospíšil, Jan; Príbeli, Peter; Raskina, Valentina; Isakov, Artem; Štursa, Jan; Vaňát, Tomáš; Vysoká, K.

2018-01-01

Roč. 894, č. 6 (2018), s. 87-95 ISSN 0168-9002 R&D Projects: GA MŠk LM2015056; GA MŠk LM2015058 Institutional support: RVO:61389005 Keywords : particle irradiation facility * radiation hardness * dosimetry * single event effect * single event upset * single event transient Subject RIV: BG - Nuclear, Atomic and Molecular Physics , Colliders OBOR OECD: Nuclear physics Impact factor: 1.362, year: 2016

Single-Event Transgene Product Levels Predict Levels in Genetically Modified Breeding Stacks.

Science.gov (United States)

Gampala, Satyalinga Srinivas; Fast, Brandon J; Richey, Kimberly A; Gao, Zhifang; Hill, Ryan; Wulfkuhle, Bryant; Shan, Guomin; Bradfisch, Greg A; Herman, Rod A

2017-09-13

The concentration of transgene products (proteins and double-stranded RNA) in genetically modified (GM) crop tissues is measured to support food, feed, and environmental risk assessments. Measurement of transgene product concentrations in breeding stacks of previously assessed and approved GM events is required by many regulatory authorities to evaluate unexpected transgene interactions that might affect expression. Research was conducted to determine how well concentrations of transgene products in single GM events predict levels in breeding stacks composed of these events. The concentrations of transgene products were compared between GM maize, soybean, and cotton breeding stacks (MON-87427 × MON-89034 × DAS-Ø15Ø7-1 × MON-87411 × DAS-59122-7 × DAS-40278-9 corn, DAS-81419-2 × DAS-44406-6 soybean, and DAS-21023-5 × DAS-24236-5 × SYN-IR102-7 × MON-88913-8 × DAS-81910-7 cotton) and their component single events (MON-87427, MON-89034, DAS-Ø15Ø7-1, MON-87411, DAS-59122-7, and DAS-40278-9 corn, DAS-81419-2, and DAS-44406-6 soybean, and DAS-21023-5, DAS-24236-5, SYN-IR102-7, MON-88913-8, and DAS-81910-7 cotton). Comparisons were made within a crop and transgene product across plant tissue types and were also made across transgene products in each breeding stack for grain/seed. Scatter plots were generated comparing expression in the stacks to their component events, and the percent of variability accounted for by the line of identity (y = x) was calculated (coefficient of identity, I 2 ). Results support transgene concentrations in single events predicting similar concentrations in breeding stacks containing the single events. Therefore, food, feed, and environmental risk assessments based on concentrations of transgene products in single GM events are generally applicable to breeding stacks composed of these events.

Variations in tritium levels during single storm events

International Nuclear Information System (INIS)

Smith, L.W.

1979-06-01

Precipitation samples have been taken over a period of one calendar year to determine the variables in environmental tritium during single storm events. Where possible, comment is made on the hydrological implications of these variations

Investigation of single event latchup

International Nuclear Information System (INIS)

Xue Yuxiong; Yang Shengsheng; Cao Zhou; Ba Dedong; An Heng; Chen Luojing; Guo Gang

2012-01-01

Radiation effects on avionics microelectronics are important reliability issues for many space applications. In particular, single-event latchup (SEL) phenomenon is a major threat to CMOS integrated circuits in space systems. To effectively circumvent the failure, it is important to know the behavior of such devices during latchup. In this paper, the mechanisms for SEL in CMOS devices are investigated. Several microelectronic devices used in avionics are tested using heavy ion beams, pulsed laser and 252 Cf source. Based on the SEL test results, SEL-hardening and monitoring methods for preventing SEL from the systems design level are proposed. (authors)

Texture evolution in upset-forged P/M and wrought tantalum: Experimentation and modeling

International Nuclear Information System (INIS)

Bingert, J.F.; Desch, P.B.; Bingert, S.R.; Maudlin, P.J.; Tome, C.N.

1997-11-01

Preferred orientations in polycrystalline materials can significantly affect their physical and mechanical response through the retention of anisotropic properties inherent to the single crystal. In this study the texture evolution in upset-forged PIM and wrought tantalum was measured as a function of initial texture, compressive strain, and relative position in the pressing. A / duplex fiber texture parallel to the compression axis was generally observed, with varying degrees of a radial component evident in the wrought material. The development of deformation textures derives from restricted crystallographic slip conditions that generate lattice rotations, and these grain reorientations can be modeled as a function of the prescribed deformation gradient. Texture development was simulated for equivalent deformations using both a modified Taylor approach and a viscoplastic self-consistent (VPSC) model. A comparison between the predicted evolution and experimental results shows a good correlation with the texture components, but an overly sharp prediction at large strains from both the Taylor and VPSC models

Single event upset test structures for digital CMOS application specific integrated circuits

International Nuclear Information System (INIS)

Baze, M.P.; Bartholet, W.G.; Braatz, J.C.; Dao, T.A.

1993-01-01

An approach has been developed for the design and utilization of SEU test structures for digital CMOS ASICs. This approach minimizes the number of test structures required by categorizing ASIC library cells according to their SEU response and designing a structure to characterize each response for each category. Critical SEU response parameters extracted from these structures are used to evaluate the SEU hardness of ASIC libraries and predict the hardness of ASIC chips

Radiation environment measurements and single event upset observations in sun-synchronous orbit

International Nuclear Information System (INIS)

Dyer, C.S.; Sims, A.J.; Farren, J.; Stephen, J.; Underwood, C.

1991-01-01

This paper reports on analysis of data from the Cosmic Radiation Environment and Dosimetry experiment (CREDO) carried in sun-synchronous polar orbit on UoSat-3 which shows the influence of cosmic rays, trapped protons and solar particles and allows comparison with device behavior

Random access memory immune to single event upset using a T-resistor

Science.gov (United States)

Ochoa, Jr., Agustin

1989-01-01

In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.

Single-event effects in analog and mixed-signal integrated circuits

International Nuclear Information System (INIS)

Turflinger, T.L.

1996-01-01

Analog and mixed-signal integrated circuits are also susceptible to single-event effects, but they have rarely been tested. Analog circuit single-particle transients require modified test techniques and data analysis. Existing work is reviewed and future concerns are outlined

Simulating single-event burnout of n-channel power MOSFET's

International Nuclear Information System (INIS)

Johnson, G.H.; Hohl, J.H.; Schrimpf, R.D.; Galloway, K.F.

1993-01-01

Heavy ions are ubiquitous in a space environment. Single-event burnout of power MOSFET's is a sudden catastrophic failure mechanism that is initiated by the passage of a heavy ion through the device structure. The passage of the heavy ion generates a current filament that locally turns on a parasitic n-p-n transistor inherent to the power MOSFET. Subsequent high currents and high voltage in the device induce second breakdown of the parasitic bipolar transistor and hence meltdown of the device. This paper presents a model that can be used for simulating the burnout mechanism in order to gain insight into the significant device parameters that most influence the single-event burnout susceptibility of n-channel power MOSFET's

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, S.; Sugimoto, K.; Shugyo, S.; Matsuda, S. [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan); Hirao, T. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

1998-12-01

Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

Design of a single ion facility and its applications

Energy Technology Data Exchange (ETDEWEB)

Cholewa, M.; Saint, A.; Legge, G.J.F. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

The use of micro-irradiation techniques in radiobiology is not new; however, the current techniques take advantage of recent developments in particle delivery, focussing detection, image processing, cell recognition and computer control. These developments have generally come from other fields, for example microbeam elemental analysis techniques and single-event upset testing of semiconductor devices. Also in radiation biology there have been important advances in developments of individual cell assays, which allow a wide range of endpoints to be studied with good accuracy at low doses. Many of the studies that are planned involve following the responses of individual cells after a programmed exposure to charged-particle traversals. To probe the radiation sensitivity of a single cell and/or its constituents with a submicron resolution several developments are needed. The essential parameters of the proposed system can be summarised as follows: a focussed beam of ions of 300nm or less at the cell; a reliable (close to 100%) single ion detection; a fast beam switch to prevent second hits; a target holder adapted for the irradiation of wet cells and a fully automated system for cell recognition and single hits. 1 fig.

Design of a single ion facility and its applications

Energy Technology Data Exchange (ETDEWEB)

Cholewa, M; Saint, A; Legge, G J.F. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

The use of micro-irradiation techniques in radiobiology is not new; however, the current techniques take advantage of recent developments in particle delivery, focussing detection, image processing, cell recognition and computer control. These developments have generally come from other fields, for example microbeam elemental analysis techniques and single-event upset testing of semiconductor devices. Also in radiation biology there have been important advances in developments of individual cell assays, which allow a wide range of endpoints to be studied with good accuracy at low doses. Many of the studies that are planned involve following the responses of individual cells after a programmed exposure to charged-particle traversals. To probe the radiation sensitivity of a single cell and/or its constituents with a submicron resolution several developments are needed. The essential parameters of the proposed system can be summarised as follows: a focussed beam of ions of 300nm or less at the cell; a reliable (close to 100%) single ion detection; a fast beam switch to prevent second hits; a target holder adapted for the irradiation of wet cells and a fully automated system for cell recognition and single hits. 1 fig.

Single-Event Latchup Testing of the Micrel MIC4424 Dual Power MOSFET Driver

Science.gov (United States)

Pellish, J. A.; Boutte, A.; Kim, H.; Phan, A.; Topper, A.

2016-01-01

We conducted 47 exposures of four different MIC4424 devices and did not observe any SEL or high-current events. This included worst-case conditions with a LET of 81 MeV-sq cm/mg, applied voltage of 18.5 V, a case temperature greater than 120 C, and a final fluence of 1x10(exp 7)/sq cm. We also monitored both the outputs for the presence of SETs. While the period of the 1 MHz square wave was slightly altered in some cases, no pulses were added or deleted. 1. Purpose: The purpose of this testing is to characterize the BiCMOS/DMOS Micrel MIC4424 dual, non-inverting MOSFET driver for single-event latchup (SEL) susceptibility. These data will be used for flight lot evaluation purposes. 2. Devices Tested: The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. Five (5) parts were provided for SEL testing. We prepared four parts for irradiation and reserved one piece as an un-irradiated control. More information about the devices can be found in Table 1. The parts were prepared for testing by removing the lid from the CDIP package to expose the target die. The parts were then soldered to small copper circuit adapter boards for easy handling. These parts are fabricated in a bulk Bi

Investigation and control of factors influencing resistance upset butt welding.

OpenAIRE

Kerstens, N.F.H.

2010-01-01

The purpose of this work is to investigate the factors influencing the resistance upset butt welding process to obtain an understanding of the metal behaviour and welding process characteristics, so that new automotive steels can be welded with reduced development time and fewer failures in production. In principle the welding process is rather simple, the materials to be joined are clamped between two electrodes and pressed together. Because there is an interface present with a higher resist...

Dealing with unexpected events on the flight deck : A conceptual model of startle and surprise

NARCIS (Netherlands)

Landman, H.M.; Groen, E.L.; Paassen, M.M. van; Bronkhorst, A.W.; Mulder, M.

2017-01-01

Objective: A conceptual model is proposed in order to explain pilot performance in surprising and startling situations. Background: Today’s debate around loss of control following in-flight events and the implementation of upset prevention and recovery training has highlighted the importance of

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, Satoshi; Sugimoto, Kenji; Matsuda, Sumio [National Space Development Agency of Japan, Ysukuba, Ibaraki (Japan); Hirao, Toshio

1998-10-01

Single-event burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs including small signal transistors with thinner epitaxial layer were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified. (author)

Single event effects and total ionizing dose effects of typical VDMOSFET devices

International Nuclear Information System (INIS)

Lou Jianshe; Cai Nan; Liu Jiaxin; Wu Qinzhi; Wang Jia

2012-01-01

In this work, single event effects and total ionizing dose effects of typical VDMOSFET irradiated by 60 Co γ-rays and 252 Cf source were studied. The single event burnout and single event gate rupture (SEB/SEGR) effects were investigated, and the relationship between drain-source breakdown voltage and ionizing dose was obtained. The results showed that the VDMOSFET devices were sensitive to SEB and SEGR, and measures to improve their resistance to SEB and SEGR should be considered seriously for their space applications. The drain-source breakdown voltage was sensitive to total ionizing dose effects as the threshold voltage. In assessing the devices' resistance to the total ionizing dose effects, both the threshold voltage and the drain-source breakdown voltage should be taken into account. (authors)

Analyzing Single-Event Gate Ruptures In Power MOSFET's

Science.gov (United States)

Zoutendyk, John A.

1993-01-01

Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

Single Event Effects in FPGA Devices 2015-2016

Science.gov (United States)

Berg, Melanie; LaBel, Kenneth; Pellish, Jonathan

2016-01-01

This presentation provides an overview of single event effects in FPGA devices 2015-2016 including commercial Xilinx V5 heavy ion accelerated testing, Xilinx Kintex-7 heavy ion accelerated testing, mitigation study, and investigation of various types of triple modular redundancy (TMR) for commercial SRAM based FPGAs.

Architectures/Algorithms/Tools for Ultra-Low Power, Compact EVA Digital Radio, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The EVA digital radio imposes tight constraints on power consumption, latency, throughput, form factor, reconfigurability, single event upset and fault tolerance,...

Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

Science.gov (United States)

Scheick, Leif

2010-01-01

The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Analysis of Control Strategies for Aircraft Flight Upset Recovery

Science.gov (United States)

Crespo, Luis G.; Kenny, Sean P.; Cox, David E.; Muri, Daniel G.

2012-01-01

This paper proposes a framework for studying the ability of a control strategy, consisting of a control law and a command law, to recover an aircraft from ight conditions that may extend beyond the normal ight envelope. This study was carried out (i) by evaluating time responses of particular ight upsets, (ii) by evaluating local stability over an equilibrium manifold that included stall, and (iii) by bounding the set in the state space from where the vehicle can be safely own to wings-level ight. These states comprise what will be called the safely recoverable ight envelope (SRFE), which is a set containing the aircraft states from where a control strategy can safely stabilize the aircraft. By safe recovery it is implied that the tran- sient response stays between prescribed limits before converging to a steady horizontal ight. The calculation of the SRFE bounds yields the worst-case initial state corresponding to each control strategy. This information is used to compare alternative recovery strategies, determine their strengths and limitations, and identify the most e ective strategy. In regard to the control law, the authors developed feedback feedforward laws based on the gain scheduling of multivariable controllers. In regard to the command law, which is the mechanism governing the exogenous signals driving the feed- forward component of the controller, we developed laws with a feedback structure that combines local stability and transient response considera- tions. The upset recovery of the Generic Transport Model, a sub-scale twin-engine jet vehicle developed by NASA Langley Research Center, is used as a case study.

Multifragmentation of a very heavy nuclear system (I): selection of single-source events

Energy Technology Data Exchange (ETDEWEB)

Frankland, J.D.; Bacri, Ch.O.; Borderie, B. [Paris-11 Univ., Inst. de Physique Nucleaire, 91 - Orsay (France)] [and others

2000-07-01

A sample of 'single-source' events, compatible with the multifragmentation of very heavy fused systems, are isolated among well-measured {sup 155}Gd + {sup nat}U 36 A.MeV reactions by examining the evolution of the kinematics of fragments with Z {>=} 5 as a function of the dissipated energy and loss of memory of the entrance channel. Single-source events are found to be the result of very central collisions. Such central collisions may also lead to multiple fragment emission due to the decay of excited projectile- and target-like nuclei and so-called 'neck' emission, and for this reason the isolation of single-source events is very difficult. Event-selection criteria based on centrality of collisions, or on the isotropy of the emitted fragments in each event, are found to be inefficient to separate the two mechanisms, unless they take into account the redistribution of fragments' kinetic energies into directions perpendicular to the beam axis. The selected events are good candidates to look for bulk effects in the multifragmentation process. (authors)

Multifragmentation of a very heavy nuclear system (I): selection of single-source events

International Nuclear Information System (INIS)

Frankland, J.D.; Bacri, Ch.O.; Borderie, B.; Rivet, M.F.; Squalli, M.; Auger, G.; Bellaize, N.; Bocage, F.; Bougault, R.; Brou, R.; Buchet, Ph.; Chbihi, A.; Colin, J.; Cussol, D.; Dayras, R.; Demeyer, A.; Dore, D.; Durand, D.; Galichet, E.; Genouin-Duhamel, E.; Gerlic, E.; Guinet, D.; Lautesse, Ph.; Laville, J.L.; Lecolley, J.F.; Legrain, R.; Le Neindre, N.; Lopez, O.; Louvel, M.; Maskay, A.M.; Nalpas, L.; Nguyen, A.D.; Parlog, M.; Peter, J.; Plagnol, E.; Rosato, E.; Saint-Laurent, F.; Salou, S.; Steckmeyer, J.C.; Stern, M.; Tabacaru, G.; Tamain, B.; Tirel, O.; Tassan-Got, L.; Vient, E.; Volant, C.; Wieleczko, J.P.

2001-01-01

A sample of 'single-source' events, compatible with the multifragmentation of very heavy fused systems, are isolated among well-measured 155 Gd+ nat U 36 A MeV reactions by examining the evolution of the kinematics of fragments with Z≥5 as a function of the dissipated energy and loss of memory of the entrance channel. Single-source events are found to be the result of very central collisions. Such central collisions may also lead to multiple fragment emission due to the decay of excited projectile- and target-like nuclei and so-called 'neck' emission, and for this reason the isolation of single-source events is very difficult. Event-selection criteria based on centrality of collisions, or on the isotropy of the emitted fragments in each event, are found to be inefficient to separate the two mechanisms, unless they take into account the redistribution of fragments' kinetic energies into directions perpendicular to the beam axis. The selected events are good candidates to look for bulk effects in the multifragmentation process

Prediction of particle orientation in simple upsetting process of NdFeB magnets

Energy Technology Data Exchange (ETDEWEB)

Chang, Chao-Cheng; Hsiao, Po-Jen [Department of Mold and Die Engineering, National Kaohsiung University of Applied Sciences, 415 Chien-Kung Road, Sanmin District, Kaohsiung 80778, Taiwan (China); You, Jr-Shiang; Chen, Yen-Ju; Chang, Can-Xun [Metal Forming Technology Section, Metal Processing R and D Department, Metal Industries Research and Development Centre, 1001 Kaonan Highway, Kaohsiung 81160, Taiwan (China)

2013-12-16

The magnetic properties of NdFeB magnets are strongly affected by crystallographic texture which is highly associated with particle orientation. This study proposed a method for predicting the particle orientation in the simple upsetting process of NdFeB magnets. The method is based on finite element simulation with flow net analysis. The magnets in a cylindrical form were compressed by two flat dies in a chamber filled with argon at 750°C. Three forming speeds were taken into account in order to obtain flow stress curves used in simulations. The micrographs of the cross sections of the deformed magnets show that the particle deformation significantly increases with the compression. The phenomenon was also predicted by the proposed method. Both simulated and experimental results show that the inhomogeneity of the texture of the NdFeB magnets can be increased by the simple upsetting process. The predicted particle orientations were in a good agreement with those examined in the deformed magnets. The proposed method for predicting particle orientations can also be used in other forming processes of NdFeB magnets.

Prediction of particle orientation in simple upsetting process of NdFeB magnets

International Nuclear Information System (INIS)

Chang, Chao-Cheng; Hsiao, Po-Jen; You, Jr-Shiang; Chen, Yen-Ju; Chang, Can-Xun

2013-01-01

The magnetic properties of NdFeB magnets are strongly affected by crystallographic texture which is highly associated with particle orientation. This study proposed a method for predicting the particle orientation in the simple upsetting process of NdFeB magnets. The method is based on finite element simulation with flow net analysis. The magnets in a cylindrical form were compressed by two flat dies in a chamber filled with argon at 750°C. Three forming speeds were taken into account in order to obtain flow stress curves used in simulations. The micrographs of the cross sections of the deformed magnets show that the particle deformation significantly increases with the compression. The phenomenon was also predicted by the proposed method. Both simulated and experimental results show that the inhomogeneity of the texture of the NdFeB magnets can be increased by the simple upsetting process. The predicted particle orientations were in a good agreement with those examined in the deformed magnets. The proposed method for predicting particle orientations can also be used in other forming processes of NdFeB magnets

Core Flight Executive Software Radiation Mitigation Study

Data.gov (United States)

National Aeronautics and Space Administration — The reliability of SmallSat / CubeSat missions may be increased by using software radiation mitigation for single event upsets (SEUs). Implementing protection in...

Effects of radiations on electronic components - Course IN2P3, release 6

International Nuclear Information System (INIS)

2007-01-01

As many off-the-shelf electronic components are now present onboard satellites, launchers and planes, this course proposes an overview of effects radiations can have on these components, notably in space applications. A first part proposes an overview of radiative environments, and more particularly presents the space radiative environment (solar wind, solar flares, cosmic radiation, radiation belts). It also presents the atmospheric and Earth radiative environment due to cosmic radiation, the alpha radiation (origin of particles, particle flow), the radiative environment within an accelerator. The second part addresses the effects of these radiative environments on electronic components, and the associated standards and tests. It addresses cumulative effects and proposes a detailed analysis of the effects of an ionizing dose on a MOS transistor, an analysis of the effects of ionising dose rate on a bipolar NPN or PNP vertical or lateral transistor, an analysis of the effects of atomic displacements, and a discussion of structure modifications. The next part describes various single events: the Single Event Upset (SEU) and the Multiple Bit Upset (MBU) in the case of a SRAM, the SEL (Single Event Latch-up) phenomenon, the SEGR (Single Event Gate Rupture) phenomenon in the case of a Power MOSFET, and the SEB (Single Event Burnout) phenomenon in the case of a Power MOSFET

Experimental Setups for Single Event Effect Studies

OpenAIRE

N. H. Medina; V. A. P. Aguiar; N. Added; F. Aguirre; E. L. A. Macchione; S. G. Alberton; M. A. G. Silveira; J. Benfica; F. Vargas; B. Porcher

2016-01-01

Experimental setups are being prepared to test and to qualify electronic devices regarding their tolerance to Single Event Effect (SEE). A multiple test setup and a new beam line developed especially for SEE studies at the São Paulo 8 UD Pelletron accelerator were prepared. This accelerator produces proton beams and heavy ion beams up to 107Ag. A Super conducting Linear accelerator, which is under construction, may fulfill all of the European Space Agency requirements to qualify electronic...

Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects

Science.gov (United States)

Reed, R. A.; Weller, R. A.; Akkerman, A.; Barak, J.; Culpepper, W.; Duzellier, S.; Foster, C.; Gaillardin, M.; Hubert, G.; Jordan, T.; Jun, I.; Koontz, S.; Lei, F.; McNulty, P.; Mendenhall, M. H.; Murat, M.; Nieminen, P.; O'Neill, P.; Raine, M.; Reddell, B.; Saigné, F.; Santin, G.; Sihver, L.; Tang, H. H. K.; Truscott, P. R.; Wrobel, F.

2013-06-01

This anthology contains contributions from eleven different groups, each developing and/or applying Monte Carlo-based radiation transport tools to simulate a variety of effects that result from energy transferred to a semiconductor material by a single particle event. The topics span from basic mechanisms for single-particle induced failures to applied tasks like developing websites to predict on-orbit single event failure rates using Monte Carlo radiation transport tools.

Investigation of photobleaching and saturation of single molecules by fluorophore recrossing events

Energy Technology Data Exchange (ETDEWEB)

Burrows, Sean M.; Reif, Randall D. [Department of Chemistry and Biochemistry, Texas Tech University, Lubbock, TX 79409-1061 (United States); Pappas, Dimitri [Department of Chemistry and Biochemistry, Texas Tech University, Lubbock, TX 79409-1061 (United States)], E-mail: d.pappas@ttu.edu

2007-08-15

A method for investigation of photobleaching and saturation of single molecules by fluorophore recrossing events in a laser beam is described. The diffraction-limited probe volumes encountered in single-molecule detection (SMD) produce high excitation irradiance, which can decrease available signal. The single molecules of several dyes were detected and the data was used to extract interpeak times above a defined threshold value. The interpeak times revealed the number of fluorophore recrossing events. The number of molecules detected that were within 2 ms of each other represented a molecular recrossing for this work. Calcein, fluorescein and R-phycoerythrin were analyzed and the saturation irradiance and photobleaching effects were determined as a function of irradiance. This approach is simple and it serves as a method of optimizing experimental conditions for single-molecule detection.

Non Invasive Instrumentation For Single Event Effects (NIISEE), Phase I

Data.gov (United States)

National Aeronautics and Space Administration — On this Phase 1 project, Adventium will identify and address key hurdles to achieve Radiation Hardening by Software (RHS) for Single Event Effects (SEEs) for modern...

Single event monitoring system based on Java 3D and XML data binding

International Nuclear Information System (INIS)

Wang Liang; Chinese Academy of Sciences, Beijing; Zhu Kejun; Zhao Jingwei

2007-01-01

Online single event monitoring is important to BESIII DAQ System. Java3D is extension of Java Language in 3D technology, XML data binding is more efficient to handle XML document than SAX and DOM. This paper mainly introduce the implementation of BESIII single event monitoring system with Java3D and XML data binding, and interface for track fitting software with JNI technology. (authors)

Single-Event Effects in Silicon and Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

A random access memory immune to single event upset using a T-Resistor

Science.gov (United States)

Ochoa, A. Jr.

1987-10-28

In a random access memory cell, a resistance ''T'' decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell. 4 figs.

Anthology of the development of radiation transport tools as applied to single event effects

International Nuclear Information System (INIS)

Akkerman, A.; Barak, J.; Murat, M.; Duzellier, S.; Hubert, G.; Gaillardin, M.; Raine, M.; Jordan, T.; Jun, I.; Koontz, S.; Reddell, B.; O'Neill, P.; Foster, C.; Culpepper, W.; Lei, F.; McNulty, P.; Nieminen, P.; Saigne, F.; Wrobel, F.; Santin, G.; Sihver, L.; Tang, H.H.K.; Truscott, P.R.

2013-01-01

This anthology contains contributions from eleven different groups, each developing and/or applying Monte Carlo-based radiation transport tools to simulate a variety of effects that result from energy transferred to a semiconductor material by a single particle event. The topics span from basic mechanisms for single-particle induced failures to applied tasks like developing web sites to predict on-orbit single event failure rates using Monte Carlo radiation transport tools. (authors)

Simulation Study of Flap Effects on a Commercial Transport Airplane in Upset Conditions

Science.gov (United States)

Cunningham, Kevin; Foster, John V.; Shah, Gautam H.; Stewart, Eric C.; Ventura, Robin N.; Rivers, Robert A.; Wilborn, James E.; Gato, William

2005-01-01

As part of NASA's Aviation Safety and Security Program, a simulation study of a twinjet transport airplane crew training simulation was conducted to address fidelity for upset or loss of control conditions and to study the effect of flap configuration in those regimes. Piloted and desktop simulations were used to compare the baseline crew training simulation model with an enhanced aerodynamic model that was developed for high-angle-of-attack conditions. These studies were conducted with various flap configurations and addressed the approach-to-stall, stall, and post-stall flight regimes. The enhanced simulation model showed that flap configuration had a significant effect on the character of departures that occurred during post-stall flight. Preliminary comparisons with flight test data indicate that the enhanced model is a significant improvement over the baseline. Some of the unrepresentative characteristics that are predicted by the baseline crew training simulation for flight in the post-stall regime have been identified. This paper presents preliminary results of this simulation study and discusses key issues regarding predicted flight dynamics characteristics during extreme upset and loss-of-control flight conditions with different flap configurations.

Single-Event Effects in Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2015-01-01

This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

Some aspects of barreling in sintered plain carbon steel powder metallurgy preforms during cold upsetting

Directory of Open Access Journals (Sweden)

Sumesh Narayan

2012-04-01

Full Text Available The present research establishes a relationship of bulged diameter with densification and hydrostatic stress in forming of sintered iron (Fe powder metallurgy preforms cold upset under two different frictional conditions, namely, nil/no and graphite lubricant condition. Sintered plain carbon steel cylindrical preforms with carbon (C contents of 0, 0.35, 0.75 and 1.1% with constant initial theoretical density of 84% and aspect ratio of 0.4 and 0.6 were prepared using a suitable die-set assembly on a 1 MN capacity hydraulic press and sintered for 90 minutes at 1200 °C. Each sintered preform was cold upset under two different frictional constraints. It is seen that the degree of bulging reduces with reducing frictional constraints at the die contact surface. Further, it is found that the bulging ratio changed as a function of relative density and hydrostatic stress, respectively, according to the power law equations.

Effect of Friction on Barreling during cold Upset Forging of Aluminium 6082 Alloy Solid cylinders

Science.gov (United States)

Priyadarshini, Amrita; Kiran, C. P.; Suresh, K.

2018-03-01

Friction is one of the significant factors in forging operations since it affects metal flow in the die, forming load, strain distribution, tool and die life, surface quality of the product etc. In upset forging, the frictional forces at the die-workpiece interface oppose the outward flow of the material due to which the specimen develops a barrel shape. As a result, the deformation becomes non-uniform or inhomogeneous which is undesirable. Barreling can be reduced by applying effective lubricant on the surface of the platens. The objective of the present work is to study experimentally the effect of various frictional conditions (dry, grease, mineral oil) on barreling during upset forging of aluminum 6082 solid cylinders of different aspect ratio (length/diameter: 0.5, 0.75, 1). The friction coefficients are determined using the ring compression test. Curvature of barrel is determined based on the assumption that the curvature of the barrel follows the geometry of circular arc.

Feasibility Analysis and Design of a Fault Tolerant Computing System: A TMR Microprocessor System Design of 64-Bit Cots Microprocessors

National Research Council Canada - National Science Library

Eken, Huseyin

2001-01-01

The purpose of this thesis is to analyze and determine the feasibility of implementing a fault tolerant computing system that is able to function in the presence of radiation induced Single Event Upsets (SEU...

Capillary electrophoretic study of individual exocytotic events in single mast cells

Energy Technology Data Exchange (ETDEWEB)

Ho, Andrea Ming-Wei [Iowa State Univ., Ames, IA (United States)

1999-02-12

The peak profile of individual degranulation events from the on-column release of serotonin from single rat peritoneal mast cells (RPMCs) was monitored using capillary electrophoresis with laser-induced native fluorescence detection (CE-LINF). Serotonin, an important biogenic amine, is contained in granules (0.25 fL) within RPMCs and is extruded by a process termed exocytosis. The secretagogue, Polymyxin B sulfate, was used as the CE running buffer after injection of a single RPMC into the separation capillary to stimulate the release of the granules. Because the release process occurs on a ms time scale, monitoring individual exocytotic events is possible with the coupling of high-speed CE and LINF detection.

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Science.gov (United States)

Scheick, Leif

2014-01-01

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Stressful Life Event Experiences of Homeless Adults: A Comparison of Single Men, Single Women, and Women with Children

Science.gov (United States)

Zugazaga, Carole

2004-01-01

This article describes stressful life events experienced by a multi-shelter sample of 162 homeless adults in the Central Florida area. Participants included homeless single men (n = 54), homeless single women (n = 54), and homeless women with children (n = 54). Subjects were interviewed with a modified version of the List of Threatening…

Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Science.gov (United States)

Scheick, Leif

2011-01-01

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

Impact of repeated single-metal and multi-metal pollution events on soil quality.

Science.gov (United States)

Burges, Aritz; Epelde, Lur; Garbisu, Carlos

2015-02-01

Most frequently, soil metal pollution results from the occurrence of repeated single-metal and, above all, multi-metal pollution events, with concomitant adverse consequences for soil quality. Therefore, in this study, we evaluated the impact of repeated single-metal and multi-metal (Cd, Pb, Cu, Zn) pollution events on soil quality, as reflected by the values of a variety of soil microbial parameters with potential as bioindicators of soil functioning. Specifically, parameters of microbial activity (potentially mineralizable nitrogen, β-glucosidase and acid phosphatase activity) and biomass (fungal and bacterial gene abundance by RT-qPCR) were determined, in the artificially metal-polluted soil samples, at regular intervals over a period of 26 weeks. Similarly, we studied the evolution over time of CaCl2-extractable metal fractions, in order to estimate metal bioavailability in soil. Different metals showed different values of bioavailability and relative bioavailability ([metal]bio/[metal]tot) in soil throughout the experiment, under both repeated single-metal and multi-metal pollution events. Both repeated Zn-pollution and multi-metal pollution events led to a significant reduction in the values of acid phosphatase activity, and bacterial and fungal gene abundance, reflecting the negative impact of these repeated events on soil microbial activity and biomass, and, hence, soil quality. Copyright © 2014 Elsevier Ltd. All rights reserved.

Can tokamaks PFC survive a single event of any plasma instabilities?

Science.gov (United States)

Hassanein, A.; Sizyuk, V.; Miloshevsky, G.; Sizyuk, T.

2013-07-01

Plasma instability events such as disruptions, edge-localized modes (ELMs), runaway electrons (REs), and vertical displacement events (VDEs) are continued to be serious events and most limiting factors for successful tokamak reactor concept. The plasma-facing components (PFCs), e.g., wall, divertor, and limited surfaces of a tokamak as well as coolant structure materials are subjected to intense particle and heat loads and must maintain a clean and stable surface environment among them and the core/edge plasma. Typical ITER transient events parameters are used for assessing the damage from these four different instability events. HEIGHTS simulation showed that a single event of a disruption, giant ELM, VDE, or RE can cause significant surface erosion (melting and vaporization) damage to PFC, nearby components, and/or structural materials (VDE, RE) melting and possible burnout of coolant tubes that could result in shut down of reactor for extended repair time.

Can tokamaks PFC survive a single event of any plasma instabilities?

International Nuclear Information System (INIS)

Hassanein, A.; Sizyuk, V.; Miloshevsky, G.; Sizyuk, T.

2013-01-01

Plasma instability events such as disruptions, edge-localized modes (ELMs), runaway electrons (REs), and vertical displacement events (VDEs) are continued to be serious events and most limiting factors for successful tokamak reactor concept. The plasma-facing components (PFCs), e.g., wall, divertor, and limited surfaces of a tokamak as well as coolant structure materials are subjected to intense particle and heat loads and must maintain a clean and stable surface environment among them and the core/edge plasma. Typical ITER transient events parameters are used for assessing the damage from these four different instability events. HEIGHTS simulation showed that a single event of a disruption, giant ELM, VDE, or RE can cause significant surface erosion (melting and vaporization) damage to PFC, nearby components, and/or structural materials (VDE, RE) melting and possible burnout of coolant tubes that could result in shut down of reactor for extended repair time

Can tokamaks PFC survive a single event of any plasma instabilities?

Energy Technology Data Exchange (ETDEWEB)

Hassanein, A., E-mail: hassanein@purdue.edu [Center for Materials under Extreme Environment, School of Nuclear Engineering, Purdue University, 400 Central Drive, West Lafayette, IN 47907 (United States); Sizyuk, V.; Miloshevsky, G.; Sizyuk, T. [Center for Materials under Extreme Environment, School of Nuclear Engineering, Purdue University, 400 Central Drive, West Lafayette, IN 47907 (United States)

2013-07-15

Plasma instability events such as disruptions, edge-localized modes (ELMs), runaway electrons (REs), and vertical displacement events (VDEs) are continued to be serious events and most limiting factors for successful tokamak reactor concept. The plasma-facing components (PFCs), e.g., wall, divertor, and limited surfaces of a tokamak as well as coolant structure materials are subjected to intense particle and heat loads and must maintain a clean and stable surface environment among them and the core/edge plasma. Typical ITER transient events parameters are used for assessing the damage from these four different instability events. HEIGHTS simulation showed that a single event of a disruption, giant ELM, VDE, or RE can cause significant surface erosion (melting and vaporization) damage to PFC, nearby components, and/or structural materials (VDE, RE) melting and possible burnout of coolant tubes that could result in shut down of reactor for extended repair time.

Measuring the upset of CMOS and TTL due to HPM-signals

Directory of Open Access Journals (Sweden)

N. Esser

2004-01-01

Full Text Available To measure the performance of electronic components when stressed by High Power Microwave signals a setup was designed and tested which allows a well-defined voltage signal to enter the component during normal operation, and to discriminate its effect on the component. The microwave signal is fed to the outside conductor of a coaxial cable and couples into the inner signal line connected to the device under test (DUT. The disturbing HF-signal is transferred almost independent from frequency to maintain the pulse shape in the time domain. The configuration designed to perform a TEM-coupling within a 50 Ohm system prevents the secondary system from feeding back to the primary system and, due to the geometrical parameters chosen, the coupling efficiency is as high as 50–90%. Linear dimensions and terminations applied allow for pulses up to a width of 12ns and up to a voltage level of 4–5 kV on the outside conductor. These pulse parameters proved to be sufficient to upset the DUTs tested so far. In more than 400 measurements a rectangular pulse of increasing voltage level was applied to different types of CMOS and TTL until the individual DUT was damaged. As well the pulse width (3, 6 or 12 ns and its polarity were varied in single-shot or repetitive-shot experiments (500 shots per voltage at a repetition rate of 3 Hz. The state of the DUT was continuously monitored by measuring both the current of the DUT circuit and that of the oscillator providing the operating signal for the DUT. The results show a very good reproducibility within a set of identical samples, remarkable differences between manufacturers and lower thresholds for repetitive testing, which indicates a memory effect of the DUT to exist for voltage levels significantly below the single-shot threshold.

Physical mechanisms of single-event effects in advanced microelectronics

Energy Technology Data Exchange (ETDEWEB)

Schrimpf, Ronald D. [Electrical Engineering and Computer Science, Vanderbilt University, 5635 Stevenson Center, Nashville, TN 37235 (United States)]. E-mail: ron.schrimpf@vanderbilt.edu; Weller, Robert A. [Electrical Engineering and Computer Science, Vanderbilt University, 5635 Stevenson Center, Nashville, TN 37235 (United States); Mendenhall, Marcus H. [Free Electron Laser Center, Vanderbilt University, Station B 351816, Nashville, TN 37235 (United States); Reed, Robert A. [Electrical Engineering and Computer Science, Vanderbilt University, 5635 Stevenson Center, Nashville, TN 37235 (United States); Massengill, Lloyd W. [Electrical Engineering and Computer Science, Vanderbilt University, 5635 Stevenson Center, Nashville, TN 37235 (United States)

2007-08-15

The single-event error rate in advanced semiconductor technologies can be estimated more accurately than conventional methods by using simulation based on accurate descriptions of a large number of individual particle interactions. The results can be used to select the ion types and energies for accelerator testing and to identify situations in which nuclear reactions will contribute to the error rate.

Physical mechanisms of single-event effects in advanced microelectronics

International Nuclear Information System (INIS)

Schrimpf, Ronald D.; Weller, Robert A.; Mendenhall, Marcus H.; Reed, Robert A.; Massengill, Lloyd W.

2007-01-01

The single-event error rate in advanced semiconductor technologies can be estimated more accurately than conventional methods by using simulation based on accurate descriptions of a large number of individual particle interactions. The results can be used to select the ion types and energies for accelerator testing and to identify situations in which nuclear reactions will contribute to the error rate

Current Single Event Effects Results for Candidate Spacecraft Electronics for NASA

Science.gov (United States)

OBryan, Martha V.; Seidleck, Christina M.; Carts, Martin A.; LaBel, Kenneth A.; Marshall, Cheryl J.; Reed, Robert A.; Sanders, Anthony B.; Hawkins, Donald K.; Cox, Stephen R.; Kniffin, Scott D.

2004-01-01

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects. Devices tested include digital, analog, linear bipolar, and hybrid devices, among others.

A viable on-chip FPGA configuration memory scrubbing approach for CBM-ToF

Energy Technology Data Exchange (ETDEWEB)

Oancea, Andrei-Dumitru; Stuellein, Christian; Manz, Sebastian; Gebelein, Jano; Kebschull, Udo [Infrastruktur und Rechnersysteme in der Informationsverarbeitung (IRI), Goethe-Universitaet, Senckenberganlage 31, 60325 Frankfurt am Main (Germany); Collaboration: CBM-Collaboration

2015-07-01

The ToF Detector of the CBM Experiment will be equipped with FPGA-based read-out boards (ROBs). These ROBs will be operated in a radiation environment, and therefore need a mitigation mechanism against soft errors in the SRAM-based configuration memories of the FPGAs. The proposed approach combines intrinsic on-chip single upset correction with extrinsic selective frame scrubbing for multiple-bit upsets. The slow control is realized using the GBT-SCA, which is capable of handling interrupts. This enables the new approach of event-driven configuration frame correction. While conventional blind scrubbing leads to a continuous load on the control path, the selective frame scrubbing reduces this load to a minimum. For verification purposes, radiation tests with a proton beam were performed at COSY, Juelich. The occurred soft errors were classified into single and multiple- bit upsets, enabling an estimation of the rate at which extrinsic intervention is necessary.

Study of transient current induced by heavy-ion microbeams in Si and GaAs

Energy Technology Data Exchange (ETDEWEB)

Hirao, Toshio; Nashiyama, Isamu; Kamiya, Tomihiro; Suda, Tamotu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

Heavy-ion microbeams were applied to the study of mechanism of single event upset (SEU). Transient current induced in p{sup +}n junction diodes by strike of heavy ion microbeam were measured by using a high-speed digitizing sampling system. (author)

Single-event burnout of power bipolar junction transistors

International Nuclear Information System (INIS)

Titus, J.L.; Johnson, G.H.; Schrimpf, R.D.; Galloway, K.F.

1991-01-01

Experimental evidence of single-event burnout of power bipolar junctions transistors (BJTs) is reported for the first time. Several commercial power BJTs were characterized in a simulated cosmic ray environment using mono-energetic ions at the tandem Van de Graaff accelerator facility at Brookhaven National Laboratory. Most of the device types exposed to this simulated environment exhibited burnout behavior. In this paper the experimental technique, data, and results are presented, while a qualitative model is used to help explain those results and trends observed in this experiment

Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

International Nuclear Information System (INIS)

Dodd, P.E.; Sexton, F.W.; Winokur, P.S.

1994-01-01

In this paper, three-dimensional numerical simulation is used to explore the basic charge-collection mechanisms in silicon n + /p diodes. For diodes on lightly-doped substrates ( 15 cm -3 ) struck by a 100-MeV Fe ion, the funneling effect is very strong and essentially all collection is by funnel-assisted drift. This drift collection may occur as late as several nanoseconds after the strike, later than is usually associated with drift collection. For moderately-doped substrates (∼1 x 10 16 cm -3 ) and epitaxial structures grown on heavily-doped substrates, the funnel effect is weaker and drift and diffusion are of more equal importance. For 5-MeV He (α-particle) strikes with low-density charge tracks, the charge-collection transient exhibits both drift and diffusion regimes regardless of the substrate doping. Simulations of diodes with passive external loads indicate that while the current response is altered considerably by the load, total collected charge is not greatly affected for the simple resistive loads studied. Three-dimensional mixed-mode simulation is performed to investigate charge-collection behavior and upset mechanisms in complete CMOS SRAM cells. Simulations of double SRAM cell structures indicate that only collection by diffusion from ''between-node'' strikes is capable of producing multiple-bit upsets in the simulated technology. Limitations of the simulations, specifically carrier-carrier scattering models and large concentration gradients, are also discussed

Experimental Research and Method for Calculation of 'Upsetting-with-Buckling' Load at the Impression-Free (Dieless Preforming of Workpiece

Directory of Open Access Journals (Sweden)

Kukhar Volodymir

2018-01-01

Full Text Available This paper presents the results of experimental studies of load characteristic changes during the upsetting of high billets with the upsetting ratio (height to diameter ratio from 3.0 to 6.0, which is followed by buckling. Such pass is an effective way of preforming the workpiece for production of forgings with a bended axis or dual forming, and belongs to impression-free (dieless operation of bulk forming. Based on the experimental data analysis, an engineering method for calculation of workpiece pre-forming load as a maximum buckling force has been developed. The analysis of the obtained data confirmed the possibility of performing of this pre-forming operation on the main forging equipment, since the load of shaping by buckling does not exceed the load of the dieforging.

Experimental Research and Method for Calculation of 'Upsetting-with-Buckling' Load at the Impression-Free (Dieless) Preforming of Workpiece

Science.gov (United States)

Kukhar, Volodymir; Artiukh, Victor; Prysiazhnyi, Andrii; Pustovgar, Andrey

2018-03-01

This paper presents the results of experimental studies of load characteristic changes during the upsetting of high billets with the upsetting ratio (height to diameter ratio) from 3.0 to 6.0, which is followed by buckling. Such pass is an effective way of preforming the workpiece for production of forgings with a bended axis or dual forming, and belongs to impression-free (dieless) operation of bulk forming. Based on the experimental data analysis, an engineering method for calculation of workpiece pre-forming load as a maximum buckling force has been developed. The analysis of the obtained data confirmed the possibility of performing of this pre-forming operation on the main forging equipment, since the load of shaping by buckling does not exceed the load of the dieforging.

Experimental study on reactor neutron induced effect of deep sub-micron CMOS static random access memory

International Nuclear Information System (INIS)

Yang Shanchao; Guo Xiaoqiang; Lin Dongsheng; Chen Wei; Li Ruibin; Bai Xiaoyan; Wang Guizhen

2010-01-01

This paper investigates neutron irradiation effects of two kinds of commercial CMOS SRAM (static random access memory), of which one is 4M memory with the feature size of 0.25 μm and the other is 16M memory with the feature size of 0.13 μm. We designed a memory testing system of irradiation effects and performed the neutron irradiation experiment using the Xi'an Pulse Reactor. The upset of two kinds of memory cells did not present a threshold versus the increase of neutron fluence. The results showed that deep sub-micron SRAM behaved single-event upset (SEU) effect in neutron irradiation environment. The SEU effect of SRAM with smaller size and higher integrated level tends to upset is considered to be related to the reduction of the device feature size, and fewer charges for upsets of the memory cell also lead to the SEU effect. (authors)

Upsetting the apple cart: a community anticoagulation clinic survey of life event factors that undermine safe therapy.

Science.gov (United States)

Edmundson, Sarah; Stuenkel, Diane L; Connolly, Phyllis M

2005-09-01

Anticoagulation therapy is a life-enhancing therapy for patients who are at risk for embolic events secondary to atrial fibrillation, valve replacement, and other comorbidities. Clinicians are motivated to decrease the amount of time that patients are either under- or over-anticoagulated, common conditions that decrease patient safety at either extreme. The primary purpose of this descriptive study was to examine the relationship between personal life event factors as measured by Norbeck's Life Events Questionnaire, core demographics such as age and income, and anticoagulation regulation. Although many factors affect anticoagulation therapy, the precise impact of life events, positive or negative, is unknown. The salient findings of this study (n = 202) showed a small, though statistically significant, inverse relationship (r = -0.184, P < .01) between negative life events and decreased time within therapeutic international normalized ratio. Total Life Event scores showed a statistically significant inverse relationship (r = -0.159, P < .05) to international normalized ratio time within therapeutic level. Lower income was inversely associated with higher negative Life Event scores (r = -0.192, P < .01). The findings demonstrate the need for strategies that address the potential impact of life events in conjunction with coexisting screening measures used in anticoagulation clinics. Implications for this study are limited by lack of methodology documenting concurrent social support factors and limitations of the research tool to reflect life event issues specific to outpatient seniors.

Validation of an "Intelligent Mouthguard" Single Event Head Impact Dosimeter.

Science.gov (United States)

Bartsch, Adam; Samorezov, Sergey; Benzel, Edward; Miele, Vincent; Brett, Daniel

2014-11-01

Dating to Colonel John Paul Stapp MD in 1975, scientists have desired to measure live human head impacts with accuracy and precision. But no instrument exists to accurately and precisely quantify single head impact events. Our goal is to develop a practical single event head impact dosimeter known as "Intelligent Mouthguard" and quantify its performance on the benchtop, in vitro and in vivo. In the Intelligent Mouthguard hardware, limited gyroscope bandwidth requires an algorithm-based correction as a function of impact duration. After we apply gyroscope correction algorithm, Intelligent Mouthguard results at time of CG linear acceleration peak correlate to the Reference Hybrid III within our tested range of pulse durations and impact acceleration profiles in American football and Boxing in vitro tests: American football, IMG=1.00REF-1.1g, R2=0.99; maximum time of peak XYZ component imprecision 3.6g and 370 rad/s2; maximum time of peak azimuth and elevation imprecision 4.8° and 2.9°; maximum average XYZ component temporal imprecision 3.3g and 390 rad/s2. Boxing, IMG=1.00REF-0.9 g, R2=0.99, R2=0.98; maximum time of peak XYZ component imprecision 3.9 g and 390 rad/s2, maximum time of peak azimuth and elevation imprecision 2.9° and 2.1°; average XYZ component temporal imprecision 4.0 g and 440 rad/s2. In vivo Intelligent Mouthguard true positive head impacts from American football players and amateur boxers have temporal characteristics (first harmonic frequency from 35 Hz to 79 Hz) within our tested benchtop (first harmonic frequencyIntelligent Mouthguard qualifies as a single event dosimeter in American football and Boxing.

Single-event burnout of power MOSFET devices for satellite application

International Nuclear Information System (INIS)

Xue Yuxiong; Tian Kai; Cao Zhou; Yang Shiyu; Liu Gang; Cai Xiaowu; Lu Jiang

2008-01-01

Single-event burnout (SEB) sensitivity was tested for power MOSFET devices, JTMCS081 and JTMCS062, which were made in Institute of Microelectronics, Chinese Academy of Sciences, using californium-252 simulation source. SEB voltage threshold was found for devices under test (DUT). It is helpful for engineers to choose devices used in satellites. (authors)

Importance of ion energy on SEU in CMOS SRAMs

Energy Technology Data Exchange (ETDEWEB)

Dodd, P.E.; Shaneyfelt, M.R.; Sexton, F.W.; Hash, G.L.; Winokur, P.S. [Sandia National Labs., Albuquerque, NM (United States); Musseau, O.; Leray, J.L. [CEA-DAM, Bruyeres-le-Chatel (France)

1998-03-01

The single-event upset (SEU) responses of 16 Kbit to 1 Mbit SRAMs irradiated with low and high-energy heavy ions are reported. Standard low-energy heavy ion tests appear to be sufficiently conservative for technologies down to 0.5 {micro}m.

Evaluation of Recent Technologies of Nonvolatile RAM

Science.gov (United States)

Nuns, Thierry; Duzellier, Sophie; Bertrand, Jean; Hubert, Guillaume; Pouget, Vincent; Darracq, FrÉdÉric; David, Jean-Pierre; Soonckindt, Sabine

2008-08-01

Two types of recent nonvolatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.

3-D topological signatures and a new discrimination method for single-electron events and 0νββ events in CdZnTe: A Monte Carlo simulation study

Energy Technology Data Exchange (ETDEWEB)

Zeng, Ming; Li, Teng-Lin; Cang, Ji-Rong [Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education (China); Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Zeng, Zhi, E-mail: zengzhi@tsinghua.edu.cn [Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education (China); Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Fu, Jian-Qiang; Zeng, Wei-He; Cheng, Jian-Ping; Ma, Hao; Liu, Yi-Nong [Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education (China); Department of Engineering Physics, Tsinghua University, Beijing 100084 (China)

2017-06-21

In neutrinoless double beta (0νββ) decay experiments, the diversity of topological signatures of different particles provides an important tool to distinguish double beta events from background events and reduce background rates. Aiming at suppressing the single-electron backgrounds which are most challenging, several groups have established Monte Carlo simulation packages to study the topological characteristics of single-electron events and 0νββ events and develop methods to differentiate them. In this paper, applying the knowledge of graph theory, a new topological signature called REF track (Refined Energy-Filtered track) is proposed and proven to be an accurate approximation of the real particle trajectory. Based on the analysis of the energy depositions along the REF track of single-electron events and 0νββ events, the REF energy deposition models for both events are proposed to indicate the significant differences between them. With these differences, this paper presents a new discrimination method, which, in the Monte Carlo simulation, achieved a single-electron rejection factor of 93.8±0.3 (stat.)% as well as a 0νββ efficiency of 85.6±0.4 (stat.)% with optimized parameters in CdZnTe.

Results from the First Two Flights of the Static Computer Memory Integrity Testing Experiment

Science.gov (United States)

Hancock, Thomas M., III

1999-01-01

This paper details the scientific objectives, experiment design, data collection method, and post flight analysis following the first two flights of the Static Computer Memory Integrity Testing (SCMIT) experiment. SCMIT is designed to detect soft-event upsets in passive magnetic memory. A soft-event upset is a change in the logic state of active or passive forms of magnetic memory, commonly referred to as a "Bitflip". In its mildest form a soft-event upset can cause software exceptions, unexpected events, start spacecraft safeing (ending data collection) or corrupted fault protection and error recovery capabilities. In it's most severe form loss of mission or spacecraft can occur. Analysis after the first flight (in 1991 during STS-40) identified possible soft-event upsets to 25% of the experiment detectors. Post flight analysis after the second flight (in 1997 on STS-87) failed to find any evidence of soft-event upsets. The SCMIT experiment is currently scheduled for a third flight in December 1999 on STS-101.

Nuclear interaction contribution to SEUs in heavy ion energy deposition in the ESA monitor

CERN Document Server

Bahamonde, Cristina

2013-01-01

The effects of nuclear interactions inducing Single Event Upsets in ESA SEU monitor are explored for heavy ion beams of different energies. The experimental and simulated results are compared, the possible causes of disagreement are suggested as well as the future steps to take.

Single-Event Effect Testing of the Vishay Si7414DN n-Type TrenchFET(Registered Trademark) Power MOSFET

Science.gov (United States)

Lauenstein, J.-M.; Casey, M. C.; Campola, M. A.; Phan, A. M.; Wilcox, E. P.; Topper, A. D.; Ladbury, R. L.

2017-01-01

This study was being undertaken to determine the single event effect susceptibility of the commercial Vishay 60-V TrenchFET power MOSFET. Heavy-ion testing was conducted at the Texas AM University Cyclotron Single Event Effects Test Facility (TAMU) and the Lawrence Berkeley National Laboratory BASE Cyclotron Facility (LBNL). In addition, initial 200-MeV proton testing was conducted at Massachusetts General Hospital (MGH) Francis H. Burr Proton Beam Therapy Center. Testing was performed to evaluate this device for single-event effects from lower-LET, lighter ions relevant to higher risk tolerant space missions.

Results of single-event multilevel orthopedic surgery in children with cerebral palsy

Directory of Open Access Journals (Sweden)

Akhmed Tomov

2015-11-01

Full Text Available Background: Single-event multilevel orthopedic surgery is a modern approach in the operative treatment of children with cerebral palsy. Methods: Single-event multilevel orthopedic surgery was carried out in 108 patients with cerebral palsy. Patients’ average age was 11.3±1.7 years. Surgical results were analyzed at follow-up after 18 to 24 months, by way of detailed physical examination, functional assessment, imaging, the Edinburgh Visual Gait Score and Gillette Functional Assessment Questionnaire. Results: In our series, 647 procedures were performed during 141 surgeries. Patients had an average of 4.59 procedures per surgery. Observational gait analysis showed an improvement in stance and swing gait phases in ambulatory children. According to the Gillette Functional Assessment Questionnaire, an increase of functional level was noted in 50 patients but did not change in 32 patients. Conclusions: For children with cerebral palsy, single-event multilevel surgery is defined as two or more surgical procedures of the soft tissue or bone at two or more anatomical levels during one operative procedure. In cases where a large volume of surgery is required, two separate operations with a short break in between, but requiring only one hospital admission and one rehabilitation period, are also included. This approach requires adapted methods of surgical intervention, and appropriate methods of anesthesia and pain control in the postoperative period to the start of rehabilitation. Compliance with the above principles allowed the necessary correction of orthopedic complications to be achieved in all cases.

SRAM-Based Passive Dosimeter for High-Energy Accelerator Environments

CERN Document Server

Makowski, D R; Napieralski, A; Swiercz, B P

2005-01-01

This paper reports a novel NVRAM-based neutron dose monitor (REM counter). The principle of this device is based on the radiation effect initiating the Single Event Upset SEU in high density microelectronic memories. Several batches of Non-Volatile memories from different manufactures were examined in various radiation environments, i.e. 241Am-Be (alpha,n) and Linear accelerators produced radiation fields. A suitable moderator was used to enhance the detector sensitivity. Further experiments were carried out in Linear Accelerators: Linac II, TTF2 and Beam Loss Environment of various Experimental Facilities at DESY Research Centre in Hamburg. A separate batch of SRAM was irradiated with 60Co-gamma rays up to a dose of about 60 Gy. No Single Event Upset (SEU) was registered. This validates, that gamma radiation has a negligible effect to trigger SEU in the SRAM. The proposed detector could be ideal for a neutron dose measurement produced by a high-energy electron linac, including synchrotron and Free Electron L...

Applications of heavy ion microprobe for single event effects analysis

International Nuclear Information System (INIS)

Reed, Robert A.; Vizkelethy, Gyorgy; Pellish, Jonathan A.; Sierawski, Brian; Warren, Kevin M.; Porter, Mark; Wilkinson, Jeff; Marshall, Paul W.; Niu, Guofu; Cressler, John D.; Schrimpf, Ronald D.; Tipton, Alan; Weller, Robert A.

2007-01-01

The motion of ionizing-radiation-induced rogue charge carriers in a semiconductor can create unwanted voltage and current conditions within a microelectronic circuit. If sufficient unwanted charge or current occurs on a sensitive node, a variety of single event effects (SEEs) can occur with consequences ranging from trivial to catastrophic. This paper describes the application of heavy ion microprobes to assist with calibration and validation of SEE modeling approaches

An Approach for the Assessment of System Upset Resilience

Science.gov (United States)

Torres-Pomales, Wilfredo

2013-01-01

This report describes an approach for the assessment of upset resilience that is applicable to systems in general, including safety-critical, real-time systems. For this work, resilience is defined as the ability to preserve and restore service availability and integrity under stated conditions of configuration, functional inputs and environmental conditions. To enable a quantitative approach, we define novel system service degradation metrics and propose a new mathematical definition of resilience. These behavioral-level metrics are based on the fundamental service classification criteria of correctness, detectability, symmetry and persistence. This approach consists of a Monte-Carlo-based stimulus injection experiment, on a physical implementation or an error-propagation model of a system, to generate a system response set that can be characterized in terms of dimensional error metrics and integrated to form an overall measure of resilience. We expect this approach to be helpful in gaining insight into the error containment and repair capabilities of systems for a wide range of conditions.

PRISM -- A tool for modelling proton energy deposition in semiconductor materials

International Nuclear Information System (INIS)

Oldfield, M.K.; Underwood, C.I.

1996-01-01

This paper presents a description of, and test results from, a new PC based software simulation tool PRISM (Protons in Semiconductor Materials). The model describes proton energy deposition in complex 3D sensitive volumes of semiconductor materials. PRISM is suitable for simulating energy deposition in surface-barrier detectors and semiconductor memory devices, the latter being susceptible to Single-Event Upset (SEU) and Multiple-Bit Upset (MBU). The design methodology on which PRISM is based, together with the techniques used to simulate ion transport and energy deposition, are described. Preliminary test results used to analyze the PRISM model are presented

Thermomechanical Stresses Analysis of a Single Event Burnout Process

Science.gov (United States)

Tais, Carlos E.; Romero, Eduardo; Demarco, Gustavo L.

2009-06-01

This work analyzes the thermal and mechanical effects arising in a power Diffusion Metal Oxide Semiconductor (DMOS) during a Single Event Burnout (SEB) process. For studying these effects we propose a more detailed simulation structure than the previously used by other authors, solving the mathematical models by means of the Finite Element Method. We use a cylindrical heat generation region, with 5 W, 10 W, 50 W and 100 W for emulating the thermal phenomena occurring during SEB processes, avoiding the complexity of the mathematical treatment of the ion-semiconductor interaction.

First nondestructive measurements of power MOSFET single event burnout cross sections

International Nuclear Information System (INIS)

Oberg, D.L.; Wert, J.L.

1987-01-01

A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities. The nondestructive technique and data for various device types taken at several accelerators, including the LBL Bevalac, are documented. Several new phenomena are observed

Crying without a cause and being easily upset in two-year-olds: heritability and predictive power of behavioral problems

NARCIS (Netherlands)

Groen-Blokhuis, Maria M.; Middeldorp, Christel M.; van Beijsterveldt, Catharina E.; Boomsma, Dorret I.

2011-01-01

In order to estimate the influence of genetic and environmental factors on 'crying without a cause' and 'being easily upset' in 2-year-old children, a large twin study was carried out. Prospective data were available for ~18,000 2-year-old twin pairs from the Netherlands Twin Register. A bivariate

SEE induced in SRAM operating in a superconducting electron linear accelerator environment

Science.gov (United States)

Makowski, D.; Mukherjee, Bhaskar; Grecki, M.; Simrock, Stefan

2005-02-01

Strong fields of bremsstrahlung photons and photoneutrons are produced during the operation of high-energy electron linacs. Therefore, a mixed gamma and neutron radiation field dominates the accelerators environment. The gamma radiation induced Total Ionizing Dose (TID) effect manifests the long-term deterioration of the electronic devices operating in accelerator environment. On the other hand, the neutron radiation is responsible for Single Event Effects (SEE) and may cause a temporal loss of functionality of electronic systems. This phenomenon is known as Single Event Upset (SEU). The neutron dose (KERMA) was used to scale the neutron induced SEU in the SRAM chips. Hence, in order to estimate the neutron KERMA conversion factor for Silicon (Si), dedicated calibration experiments using an Americium-Beryllium (241Am/Be) neutron standard source was carried out. Single Event Upset (SEU) influences the short-term operation of SRAM compared to the gamma induced TID effect. We are at present investigating the feasibility of an SRAM based real-time beam-loss monitor for high-energy accelerators utilizing the SEU caused by fast neutrons. This paper highlights the effects of gamma and neutron radiations on Static Random Access Memory (SRAM), placed at selected locations near the Superconducting Linear Accelerator driving the Vacuum UV Free Electron Laser (VUVFEL) of DESY.

Radiation tolerant combinational logic cell

Science.gov (United States)

Maki, Gary R. (Inventor); Gambles, Jody W. (Inventor); Whitaker, Sterling (Inventor)

2009-01-01

A system has a reduced sensitivity to Single Event Upset and/or Single Event Transient(s) compared to traditional logic devices. In a particular embodiment, the system includes an input, a logic block, a bias stage, a state machine, and an output. The logic block is coupled to the input. The logic block is for implementing a logic function, receiving a data set via the input, and generating a result f by applying the data set to the logic function. The bias stage is coupled to the logic block. The bias stage is for receiving the result from the logic block and presenting it to the state machine. The state machine is coupled to the bias stage. The state machine is for receiving, via the bias stage, the result generated by the logic block. The state machine is configured to retain a state value for the system. The state value is typically based on the result generated by the logic block. The output is coupled to the state machine. The output is for providing the value stored by the state machine. Some embodiments of the invention produce dual rail outputs Q and Q'. The logic block typically contains combinational logic and is similar, in size and transistor configuration, to a conventional CMOS combinational logic design. However, only a very small portion of the circuits of these embodiments, is sensitive to Single Event Upset and/or Single Event Transients.

Soft error rate analysis methodology of multi-Pulse-single-event transients

International Nuclear Information System (INIS)

Zhou Bin; Huo Mingxue; Xiao Liyi

2012-01-01

As transistor feature size scales down, soft errors in combinational logic because of high-energy particle radiation is gaining more and more concerns. In this paper, a combinational logic soft error analysis methodology considering multi-pulse-single-event transients (MPSETs) and re-convergence with multi transient pulses is proposed. In the proposed approach, the voltage pulse produced at the standard cell output is approximated by a triangle waveform, and characterized by three parameters: pulse width, the transition time of the first edge, and the transition time of the second edge. As for the pulse with the amplitude being smaller than the supply voltage, the edge extension technique is proposed. Moreover, an efficient electrical masking model comprehensively considering transition time, delay, width and amplitude is proposed, and an approach using the transition times of two edges and pulse width to compute the amplitude of pulse is proposed. Finally, our proposed firstly-independently-propagating-secondly-mutually-interacting (FIP-SMI) is used to deal with more practical re-convergence gate with multi transient pulses. As for MPSETs, a random generation model of MPSETs is exploratively proposed. Compared to the estimates obtained using circuit level simulations by HSpice, our proposed soft error rate analysis algorithm has 10% errors in SER estimation with speed up of 300 when the single-pulse-single-event transient (SPSET) is considered. We have also demonstrated the runtime and SER decrease with the increment of P0 using designs from the ISCAS-85 benchmarks. (authors)

New method for selection and characterization of single-source events in Ni+Ni collisions at 32 A.MeV

International Nuclear Information System (INIS)

Maskay-Wallez, Anne-Marie

1999-01-01

The study of heavy ion collisions, with the help of such efficient multi-detectors as INDRA, has shown the persistence of reactions leading to single-source events, up to bombarding energies higher than the Fermi one. These events could help characterizing an expected phase transition in nuclear matter. Whatever interesting they may be, the single-source events correspond to a small part of the total cross section, which makes them difficult to isolate and therefore to analyze. That is why different selection means have been tested - thanks to the 'Simon' event generator - on a simulated Ni + Ni at 32 A·MeV sample, before any application to the INDRA experimental data. As the known methods based on global variables did not prove effective, a set of new 4-dimensional quantities has been built, whose main advantage lies in a better description of physical events. From a Discriminant Analysis performed on 625 of these new 'moments' proceeds a highly discriminant variable, called D 625 . The experimental cross section associated with D 625 -selected single-source events amounts to 170 mb at 32 A·MeV. Such quasi-fusion events are shown to disappear at about 60 A·MeV. As regards the deexcitation mode of the 32 A·MeV Ni + Ni single-source events, an extensive experimental study and comparisons of the data with two reference models seem to confirm the hypothesis of a transition between fusion-evaporation and simultaneous multifragmentation mechanisms. (author)

Crying Without a Cause and Being Easily Upset in Two-Year-Olds: Heritability and Predictive Power of Behavioral Problems

NARCIS (Netherlands)

Groen-Blokhuis, M.M.; Middeldorp, C.M.; van Beijsterveldt, C.E.M.; Boomsma, D.I.

2011-01-01

In order to estimate the influence of genetic and environmental factors on 'crying without a cause' and 'being easily upset' in 2-year-old children, a large twin study was carried out. Prospective data were available for ∼18,000 2-year-old twin pairs from the Netherlands Twin Register. A bivariate

Estimate of radiation damage to low-level electronics of the RF system in the LHC cavities arising from beam gas collisions.

Science.gov (United States)

Butterworth, A; Ferrari, A; Tsoulou, E; Vlachoudis, V; Wijnands, T

2005-01-01

Monte Carlo simulations have been performed to estimate the radiation damage induced by high-energy hadrons in the digital electronics of the RF low-level systems in the LHC cavities. High-energy hadrons are generated when the proton beams interact with the residual gas. The contributions from various elements-vacuum chambers, cryogenic cavities, wideband pickups and cryomodule beam tubes-have been considered individually, with each contribution depending on the gas composition and density. The probability of displacement damage and single event effects (mainly single event upsets) is derived for the LHC start-up conditions.

Kernel PLS Estimation of Single-trial Event-related Potentials

Science.gov (United States)

Rosipal, Roman; Trejo, Leonard J.

2004-01-01

Nonlinear kernel partial least squaes (KPLS) regressior, is a novel smoothing approach to nonparametric regression curve fitting. We have developed a KPLS approach to the estimation of single-trial event related potentials (ERPs). For improved accuracy of estimation, we also developed a local KPLS method for situations in which there exists prior knowledge about the approximate latency of individual ERP components. To assess the utility of the KPLS approach, we compared non-local KPLS and local KPLS smoothing with other nonparametric signal processing and smoothing methods. In particular, we examined wavelet denoising, smoothing splines, and localized smoothing splines. We applied these methods to the estimation of simulated mixtures of human ERPs and ongoing electroencephalogram (EEG) activity using a dipole simulator (BESA). In this scenario we considered ongoing EEG to represent spatially and temporally correlated noise added to the ERPs. This simulation provided a reasonable but simplified model of real-world ERP measurements. For estimation of the simulated single-trial ERPs, local KPLS provided a level of accuracy that was comparable with or better than the other methods. We also applied the local KPLS method to the estimation of human ERPs recorded in an experiment on co,onitive fatigue. For these data, the local KPLS method provided a clear improvement in visualization of single-trial ERPs as well as their averages. The local KPLS method may serve as a new alternative to the estimation of single-trial ERPs and improvement of ERP averages.

Parasitic bipolar amplification in a single event transient and its temperature dependence

International Nuclear Information System (INIS)

Liu Zheng; Chen Shu-Ming; Chen Jian-Jun; Qin Jun-Rui; Liu Rong-Rong

2012-01-01

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor

Development of measurement system for radiation effect on static random access memory based field programmable gate array

International Nuclear Information System (INIS)

Yao Zhibin; He Baoping; Zhang Fengqi; Guo Hongxia; Luo Yinhong; Wang Yuanming; Zhang Keying

2009-01-01

Based on the detailed investigation in field programmable gate array(FPGA) radiation effects theory, a measurement system for radiation effects on static random access memory(SRAM)-based FPGA was developed. The testing principle of internal memory, function and power current was introduced. The hardware and software implement means of system were presented. Some important parameters for radiation effects on SRAM-based FPGA, such as configuration RAM upset section, block RAM upset section, function fault section and single event latchup section can be gained with this system. The transmission distance of the system can be over 50 m and the maximum number of tested gates can reach one million. (authors)

Single Event Effects (SEE) for Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

Science.gov (United States)

Lauenstein, Jean-Marie

2011-01-01

Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide.

Static Computer Memory Integrity Testing (SCMIT): An experiment flown on STS-40 as part of GAS payload G-616

Science.gov (United States)

Hancock, Thomas

1993-01-01

This experiment investigated the integrity of static computer memory (floppy disk media) when exposed to the environment of low earth orbit. The experiment attempted to record soft-event upsets (bit-flips) in static computer memory. Typical conditions that exist in low earth orbit that may cause soft-event upsets include: cosmic rays, low level background radiation, charged fields, static charges, and the earth's magnetic field. Over the years several spacecraft have been affected by soft-event upsets (bit-flips), and these events have caused a loss of data or affected spacecraft guidance and control. This paper describes a commercial spin-off that is being developed from the experiment.

Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

Science.gov (United States)

Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

2014-01-01

This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

Measurements of proton upset induced in Cmos devices synthesis of CEA studies

International Nuclear Information System (INIS)

Mijuin, D.; Buisson, J.; Brunet, J.P.; Murat, J.; Chapuis, T.

1990-01-01

Within its space activities, the Departement d'Electronique et d'Instrumentation Nucleaire (DEIN) is involved in a research program regarding the behaviour of electronic components submitted to the type of radiations encountered in earth orbits or by planetary probes. Located at Saclay, the SATURNE synchrotron is a tool well suited to simulate the effects of high energy cosmic particles. The DEIN has thus carried out several experimental runs in which CMOS SRAM were irradiated with a proton beam. SATURNE is a synchrotron designed for basic research in the physics of light particles and heavy ions of intermediate energy. The energy supplied to the protons lies between 0.2 and 2.9 GeV with an intensity larger than 10 12 protons cycle -1 . During the experiment and in order to lower the proton energy under 200 MeV, an Al-absorber was used. The flux measurement was obtained by two different methods: measurement by activation and measurement by counting (scintillator coupled with a PM). The increase number of upsets during irradiation was determined, on line, for each cycle, by a testor using a comparative hardware method. The testor was designed by the DEIN. Latch-up was also detected. The results, presented in this paper, were obtained during the run of September 1990. The upset cross-sections per bit of static memories MHS 65162. MHS 65641, MOSTEK 48H64 and HYUNDAI 6116 were measured for 1000, 200, 158.9, 147.5, 122.6, 93.3 and 66.2 MeV. These experimental values were fitted using the Bendel equation with two variable parameters proposed by Stapor and al (3). The results of the run of September 1990 encourage us to pursue our studies. By now, it seems necessary to improve the experimental line (elimination of the parasitic effects generated by the Al-absorber) and to upgrade the methods used for measuring the flux

Scattering extraction of ions at CRYRING for SEU testing

CERN Document Server

Novák, D; Klamra, W; Norlin, L O; Bagge, L; Kaellberg, A; Paál, A; Rensfelt, K G; Molnár, J

1999-01-01

A measuring station has been built at the CRYRING heavy ion accelerator to test the Single Event Upset (SEU) phenomena in working Static RAM circuits. The setup extracts the beam using Rutherford scattering and the ions are monitored with a BaF sub 2 scintillator. SEU measurements have been performed for standard bulk CMOS memory circuits.

Self-efficacy for controlling upsetting thoughts and emotional eating in family caregivers.

Science.gov (United States)

MacDougall, Megan; Steffen, Ann

2017-10-01

Self-efficacy for controlling upsetting thoughts was examined as a predictor of emotional eating by family caregivers of physically and cognitively impaired older adults. Adult women (N = 158) providing healthcare assistance for an older family member completed an online survey about caregiving stressors, depressive symptoms, self-efficacy, and emotional eating. A stress process framework was used as a conceptual model to guide selection of variables predicting emotional eating scores. A hierarchical multiple regression was conducted and the overall model was significant (R 2 = .21, F(4,153) = 10.02, p accounting for IADL, role overload, and depression scores. These findings replicate previous research demonstrating the relationship between managing cognitions about caregiving and behavioral responses to stressors, and point to the importance of addressing cognitive processes in efforts to improve caregiver health behaviors.

Monitoring of seismic events from a specific source region using a single regional array: A case study

Science.gov (United States)

Gibbons, S. J.; Kværna, T.; Ringdal, F.

2005-07-01

In the monitoring of earthquakes and nuclear explosions using a sparse worldwide network of seismic stations, it is frequently necessary to make reliable location estimates using a single seismic array. It is also desirable to screen out routine industrial explosions automatically in order that analyst resources are not wasted upon detections which can, with a high level of confidence, be associated with such a source. The Kovdor mine on the Kola Peninsula of NW Russia is the site of frequent industrial blasts which are well recorded by the ARCES regional seismic array at a distance of approximately 300 km. We describe here an automatic procedure for identifying signals which are likely to result from blasts at the Kovdor mine and, wherever possible, for obtaining single array locations for such events. Carefully calibrated processing parameters were chosen using measurements from confirmed events at the mine over a one-year period for which the operators supplied Ground Truth information. Phase arrival times are estimated using an autoregressive method and slowness and azimuth are estimated using broadband f{-} k analysis in fixed frequency bands and time-windows fixed relative to the initial P-onset time. We demonstrate the improvement to slowness estimates resulting from the use of fixed frequency bands. Events can be located using a single array if, in addition to the P-phase, at least one secondary phase is found with both an acceptable slowness estimate and valid onset-time estimate. We evaluate the on-line system over a twelve month period; every event known to have occured at the mine is detected by the process and 32 out of 53 confirmed events were located automatically. The remaining events were classified as “very likely” Kovdor events and were subsequently located by an analyst. The false alarm rate is low; only 84 very likely Kovdor events were identified during the whole of 2003 and none of these were subsequently located at a large distance from

To Leave a Praxis to Itself May Be to Upset It in Unintended Ways

DEFF Research Database (Denmark)

Olsen, Poul Bitsch; Axel, Erik

by the researchers on a conception of situated praxis, of conflictual cooperation, and on an interest in morals and the meaning of upsetting practices. The organization of the material may hopefully provoke discussions around praxis as part of its further development. Thus, our presentation is based on a notion...... of praxis. Praxis is formed by the reciprocal differentiations of acts. In order to be able to act here, we try to arrange things to be done in specific ways there. In order to build the house here, we arrange a supply of inhabitants here, a conglomerate of producers there etc.. Furthermore, what we achieve...

Effectiveness Analysis of a Non-Destructive Single Event Burnout Test Methodology

CERN Document Server

Oser, P; Spiezia, G; Fadakis, E; Foucard, G; Peronnard, P; Masi, A; Gaillard, R

2014-01-01

It is essential to characterize power MosFETs regarding their tolerance to destructive Single Event Burnouts (SEB). Therefore, several non-destructive test methods have been developed to evaluate the SEB cross-section of power devices. A power MosFET has been evaluated using a test circuit, designed according to standard non-destructive test methods discussed in the literature. Guidelines suggest a prior adaptation of auxiliary components to the device sensitivity before the radiation test. With the first value chosen for the de-coupling capacitor, the external component initiated destructive events and affected the evaluation of the cross-section. As a result, the influence of auxiliary components on the device cross-section was studied. This paper presents the obtained experimental results, supported by SPICE simulations, to evaluate and discuss how the circuit effectiveness depends on the external components.

Estimate of radiation damage to low-level electronics of the RF system in the LHC cavities arising from beam gas collisions

International Nuclear Information System (INIS)

Butterworth, A.; Ferrari, A.; Tsoulou, E.; Vlachoudis, V.; Wijnands, T.

2005-01-01

Monte Carlo simulations have been performed to estimate the radiation damage induced by high-energy hadrons in the digital electronics of the RF low-level systems in the LHC cavities. High-energy hadrons are generated when the proton beams interact with the residual gas. The contributions from various elements - vacuum chambers, cryogenic cavities, wideband pickups and cryo-module beam tubes - have been considered individually, with each contribution depending on the gas composition and density. The probability of displacement damage and single event effects (mainly single event upsets) is derived for the LHC start-up conditions. (authors)

Discussions On Worst-Case Test Condition For Single Event Burnout

Science.gov (United States)

Liu, Sandra; Zafrani, Max; Sherman, Phillip

2011-10-01

This paper discusses the failure characteristics of single- event burnout (SEB) on power MOSFETs based on analyzing the quasi-stationary avalanche simulation curves. The analyses show the worst-case test condition for SEB would be using the ion that has the highest mass that would result in the highest transient current due to charge deposition and displacement damage. The analyses also show it is possible to build power MOSFETs that will not exhibit SEB even when tested with the heaviest ion, which have been verified by heavy ion test data on SEB sensitive and SEB immune devices.

Potential impact of single-risk-factor versus total risk management for the prevention of cardiovascular events in Seychelles.

Science.gov (United States)

Ndindjock, Roger; Gedeon, Jude; Mendis, Shanthi; Paccaud, Fred; Bovet, Pascal

2011-04-01

To assess the prevalence of cardiovascular (CV) risk factors in Seychelles, a middle-income African country, and compare the cost-effectiveness of single-risk-factor management (treating individuals with arterial blood pressure ≥ 140/90 mmHg and/or total serum cholesterol ≥ 6.2 mmol/l) with that of management based on total CV risk (treating individuals with a total CV risk ≥ 10% or ≥ 20%). CV risk factor prevalence and a CV risk prediction chart for Africa were used to estimate the 10-year risk of suffering a fatal or non-fatal CV event among individuals aged 40-64 years. These figures were used to compare single-risk-factor management with total risk management in terms of the number of people requiring treatment to avert one CV event and the number of events potentially averted over 10 years. Treatment for patients with high total CV risk (≥ 20%) was assumed to consist of a fixed-dose combination of several drugs (polypill). Cost analyses were limited to medication. A total CV risk of ≥ 10% and ≥ 20% was found among 10.8% and 5.1% of individuals, respectively. With single-risk-factor management, 60% of adults would need to be treated and 157 cardiovascular events per 100000 population would be averted per year, as opposed to 5% of adults and 92 events with total CV risk management. Management based on high total CV risk optimizes the balance between the number requiring treatment and the number of CV events averted. Total CV risk management is much more cost-effective than single-risk-factor management. These findings are relevant for all countries, but especially for those economically and demographically similar to Seychelles.

A capacitively coupled dose-rate-dependent transient upset mechanism in a bipolar memory

International Nuclear Information System (INIS)

Turfler, R.M.; Pease, R.L.; Dinger, G.; Armstrong, B.

1992-01-01

This paper reports on a pattern sensitivity that was observed in the threshold dose rate response of a bipolar 16K PROM for radiation pulse widths of 20-100 ns. For the worst case pattern, the upset threshold was a factor of three lower than for the commonly used checkerboard pattern. The mechanism for this pattern sensitivity was found to be a capacitively coupled voltage transient on a sensitive node which caused a low-to-high transition at the output. A design fix was implemented to significantly alter the ratio of the two parasitic capacitances in a capacitive divider which reduced the amplitude of the voltage transient at the sensitive node. It was demonstrated that in the redesign, the pattern sensitivity was eliminated

Survey of Quantitative Research Metrics to Assess Pilot Performance in Upset Recovery

Science.gov (United States)

Le Vie, Lisa R.

2016-01-01

Accidents attributable to in-flight loss of control are the primary cause for fatal commercial jet accidents worldwide. The National Aeronautics and Space Administration (NASA) conducted a literature review to determine and identify the quantitative standards for assessing upset recovery performance. This review contains current recovery procedures for both military and commercial aviation and includes the metrics researchers use to assess aircraft recovery performance. Metrics include time to first input, recognition time and recovery time and whether that input was correct or incorrect. Other metrics included are: the state of the autopilot and autothrottle, control wheel/sidestick movement resulting in pitch and roll, and inputs to the throttle and rudder. In addition, airplane state measures, such as roll reversals, altitude loss/gain, maximum vertical speed, maximum/minimum air speed, maximum bank angle and maximum g loading are reviewed as well.

Texture evolution maps for upset deformation of body-centered cubic metals

International Nuclear Information System (INIS)

Lee, Myoung-Gyu; Wang, Jue; Anderson, Peter M.

2007-01-01

Texture evolution maps are used as a tool to visualize texture development during upset deformation in body-centered cubic metals. These maps reveal initial grain orientations that tend toward normal direction (ND)|| versus ND|| . To produce these maps, a finite element analysis (FEA) with a rate-dependent crystal plasticity constitutive relation for tantalum is used. A reference case having zero workpiece/die friction shows that ∼64% of randomly oriented grains rotate toward ND|| and ∼36% rotate toward ND|| . The maps show well-established trends that increasing strain rate sensitivity and decreasing latent-to-self hardening ratio reduce both and percentages, leading to more diffuse textures. Reducing operative slip systems from both {1 1 0}/ and {1 1 2}/ to just {1 1 0}/ has a mixed effect: it increases the percentage but decreases the percentage. Reducing the number of slip systems and increasing the number of FEA integration points per grain strengthen - texture bands that are observed experimentally

The effects of cosmic radiation on implantable medical devices

International Nuclear Information System (INIS)

Bradley, P.

1996-01-01

Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 Gγ) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset (SEU) as the main pervasive ionising radiation threat to the reliability of implantable devices. A theoretical model which predicts the susceptibility of a RAM cell to secondary neutron cosmic radiation induced SEU is presented. The model correlates well within the statistical uncertainty associated with both the theoretical and field estimate. The predicted Soft Error Rate (SER) is 4.8 x l0 -12 upsets/(bit hr) compared to an observed upset rate of 8.5 x 10 -12 upsets/(bit hr) from 20 upsets collected over a total of 284672 device days. The predicted upset rate may increase by up to 20% when consideration is given to patients flying in aircraft The upset rate is also consistent with the expected geographical variations of the secondary cosmic ray neutron flux, although insufficient upsets precluded a statistically significant test. This is the first clinical data set obtained indicating the effects of cosmic radiation on implantable devices. Importantly, it may be used to predict the susceptibility of future to the implantable device designs to the effects of cosmic radiation

Development of heavy-ion irradiation technique for single-event in semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Nemoto, Norio; Akutsu, Takao; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Naitoh, Ichiro; Itoh, Hisayoshi; Agematsu, Takashi; Kamiya, Tomihiro; Nashiyama, Isamu

1997-03-01

Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

Prediction Methodology for Proton Single Event Burnout: Application to a STRIPFET Device

CERN Document Server

Siconolfi, Sara; Oser, Pascal; Spiezia, Giovanni; Hubert, Guillaume; David, Jean-Pierre

2015-01-01

This paper presents a single event burnout (SEB) sensitivity characterization for power MOSFETs, independent from tests, through a prediction model issued from TCAD analysis and the knowledge of device topology. The methodology is applied to a STRIPFET device and compared to proton data obtained at PSI, showing a good agreement in the order of magnitude of proton SEB cross section, and thus validating the prediction model as an alternative device characterization with respect to SEB.

An analog cell to detect single event transients in voltage references

Energy Technology Data Exchange (ETDEWEB)

Franco, F.J., E-mail: fjfranco@fis.ucm.es [Departamento de Física Aplicada III, Facultad de Físicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain); Palomar, C. [Departamento de Física Aplicada III, Facultad de Físicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain); Izquierdo, J.G. [Centro de Láseres Ultrarrápidos, Facultad de Químicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain); Agapito, J.A. [Departamento de Física Aplicada III, Facultad de Físicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain)

2015-01-11

A reliable voltage reference is mandatory in mixed-signal systems. However, this family of components can undergo very long single event transients when operating in radiation environments such as space and nuclear facilities due to the impact of heavy ions. The purpose of the present paper is to demonstrate how a simple cell can be used to detect these transients. The cell was implemented with typical COTS components and its behavior was verified by SPICE simulations and in a laser facility. Different applications of the cell are explored as well.

An SEU-hardened latch with a triple-interlocked structure

International Nuclear Information System (INIS)

Li Yuanqing; Yao Suying; Xu Jiangtao; Gao Jing

2012-01-01

A single event upset (SEU) tolerant latch with a triple-interlocked structure is presented. Its self-recovery mechanism is implemented by using three pairs of guard-gates and inverters to construct feedback lines inside the structure. This latch effectively suppresses the effects of charge deposition at any single internal node caused by particle strikes. Three recently reported SEU-hardened latches are chosen and compared with this latch in terms of reliability. The potential problems that these three latches could still get flipped due to single event effects or single event effects plus crosstalk coupling are pointed out, which can be mitigated by this proposed latch. The SEU tolerance of each latch design is evaluated through circuit-level SEU injection simulation. Furthermore, discussions on the crosstalk robustness and some other characteristics of these latches are also presented. (semiconductor integrated circuits)

Single Versus Multiple Events Error Potential Detection in a BCI-Controlled Car Game With Continuous and Discrete Feedback.

Science.gov (United States)

Kreilinger, Alex; Hiebel, Hannah; Müller-Putz, Gernot R

2016-03-01

This work aimed to find and evaluate a new method for detecting errors in continuous brain-computer interface (BCI) applications. Instead of classifying errors on a single-trial basis, the new method was based on multiple events (MEs) analysis to increase the accuracy of error detection. In a BCI-driven car game, based on motor imagery (MI), discrete events were triggered whenever subjects collided with coins and/or barriers. Coins counted as correct events, whereas barriers were errors. This new method, termed ME method, combined and averaged the classification results of single events (SEs) and determined the correctness of MI trials, which consisted of event sequences instead of SEs. The benefit of this method was evaluated in an offline simulation. In an online experiment, the new method was used to detect erroneous MI trials. Such MI trials were discarded and could be repeated by the users. We found that, even with low SE error potential (ErrP) detection rates, feasible accuracies can be achieved when combining MEs to distinguish erroneous from correct MI trials. Online, all subjects reached higher scores with error detection than without, at the cost of longer times needed for completing the game. Findings suggest that ErrP detection may become a reliable tool for monitoring continuous states in BCI applications when combining MEs. This paper demonstrates a novel technique for detecting errors in online continuous BCI applications, which yields promising results even with low single-trial detection rates.

Automatic Single Event Effects Sensitivity Analysis of a 13-Bit Successive Approximation ADC

Science.gov (United States)

Márquez, F.; Muñoz, F.; Palomo, F. R.; Sanz, L.; López-Morillo, E.; Aguirre, M. A.; Jiménez, A.

2015-08-01

This paper presents Analog Fault Tolerant University of Seville Debugging System (AFTU), a tool to evaluate the Single-Event Effect (SEE) sensitivity of analog/mixed signal microelectronic circuits at transistor level. As analog cells can behave in an unpredictable way when critical areas interact with the particle hitting, there is a need for designers to have a software tool that allows an automatic and exhaustive analysis of Single-Event Effects influence. AFTU takes the test-bench SPECTRE design, emulates radiation conditions and automatically evaluates vulnerabilities using user-defined heuristics. To illustrate the utility of the tool, the SEE sensitivity of a 13-bits Successive Approximation Analog-to-Digital Converter (ADC) has been analysed. This circuit was selected not only because it was designed for space applications, but also due to the fact that a manual SEE sensitivity analysis would be too time-consuming. After a user-defined test campaign, it was detected that some voltage transients were propagated to a node where a parasitic diode was activated, affecting the offset cancelation, and therefore the whole resolution of the ADC. A simple modification of the scheme solved the problem, as it was verified with another automatic SEE sensitivity analysis.

Influences of lubricant pocket geometry and working conditions upon micro lubrication mechanisms in upsetting and strip drawing

DEFF Research Database (Denmark)

Shimizu, Ichiro; Martins, P. A. F.; Bay, Niels

2010-01-01

, during upsetting and strip drawing, by means of a rigid-viscoplastic finite-element formulation. Special emphasis is placed on the effect of pocket geometry on the build-up of hydrostatic pressure, which is responsible for the onset of micro-lubrication mechanisms. A good agreement is found between......Micro-lubricant pockets located in the surface of plastically deforming workpieces are recognised to improve the performance of fluid lubrication in a metal-forming process. This work investigates the joint influence of pocket geometry and process working conditions on micro-lubrication mechanisms...

Rapid formation of a modern bedrock canyon by a single flood event

Science.gov (United States)

Lamb, Michael P.; Fonstad, Mark A.

2010-07-01

Deep river canyons are thought to form slowly over geological time (see, for example, ref. 1), cut by moderate flows that reoccur every few years. In contrast, some of the most spectacular canyons on Earth and Mars were probably carved rapidly during ancient megaflood events. Quantification of the flood discharge, duration and erosion mechanics that operated during such events is hampered because we lack modern analogues. Canyon Lake Gorge, Texas, was carved in 2002 during a single catastrophic flood. The event offers a rare opportunity to analyse canyon formation and test palaeo-hydraulic-reconstruction techniques under known topographic and hydraulic conditions. Here we use digital topographic models and visible/near-infrared aerial images from before and after the flood, discharge measured during the event, field measurements and sediment-transport modelling to show that the flood moved metre-sized boulders, excavated ~7m of limestone and transformed a soil-mantled valley into a bedrock canyon in just ~3days. We find that canyon morphology is strongly dependent on rock type: plucking of limestone blocks produced waterfalls, inner channels and bedrock strath terraces, whereas abrasion of cemented alluvium sculpted walls, plunge pools and streamlined islands. Canyon formation was so rapid that erosion might have been limited by the ability of the flow to transport sediment. We suggest that our results might improve hydraulic reconstructions of similar megafloods on Earth and Mars.

Triple modular redundancy (TMR) in a configurable fault-tolerant processor (CFTP) for space applications

OpenAIRE

Yuan, Rong

2003-01-01

Approved for public release, distribution is unlimited Without the protection of atmosphere, space systems have to mitigate radiation effects. Several different technologies are used to deal with different radiation effects in order to keep the space device work properly. One of the radiation effects called Single Event Upset (SEU) can change the state of a component or data on the bus. A single error is possible to cause a system failure if it is not corrected. Besides error correction, a...

The Influence of Age at Single-Event Multilevel Surgery on Outcome in Children with Cerebral Palsy Who Walk with Flexed Knee Gait

Science.gov (United States)

Svehlik, Martin; Steinwender, Gerhard; Kraus, Tanja; Saraph, Vinay; Lehmann, Thomas; Linhart, Wolfgang E.; Zwick, Ernst B.

2011-01-01

Aim: Information on the timing and long-term outcome of single-event multilevel surgery in children with bilateral spastic cerebral palsy (CP) walking with flexed knee gait is limited. Based on our clinical experience, we hypothesized that older children with bilateral spastic CP would benefit more from single-event multilevel surgery than younger…

Discrete event model-based simulation for train movement on a single-line railway

International Nuclear Information System (INIS)

Xu Xiao-Ming; Li Ke-Ping; Yang Li-Xing

2014-01-01

The aim of this paper is to present a discrete event model-based approach to simulate train movement with the considered energy-saving factor. We conduct extensive case studies to show the dynamic characteristics of the traffic flow and demonstrate the effectiveness of the proposed approach. The simulation results indicate that the proposed discrete event model-based simulation approach is suitable for characterizing the movements of a group of trains on a single railway line with less iterations and CPU time. Additionally, some other qualitative and quantitative characteristics are investigated. In particular, because of the cumulative influence from the previous trains, the following trains should be accelerated or braked frequently to control the headway distance, leading to more energy consumption. (general)

Comparison between ground tests and flight data for two static 32 KB memories

International Nuclear Information System (INIS)

Cheynet, Ph.; Velazco, R.; Cheynet, Ph.; Ecoffet, R.; Duzellier, S.; David, J.P.; Loquet, J.G.

1999-01-01

The study concerns two 32 K-byte static memories, one from Hitachi (HM62256) and the other (HM65756) from Matra-MHS. The results correspond to around one year of measurement in high radiation orbit and a total of 268 upsets were detected. As a preliminary conclusion it can be stated that the MHS SRAM is probably at least 4 times more sensitive to SEU (single event upset) than the Hitachi SRAM. The Hitachi memory has exhibited what we call ''stuck-at'' bit errors. This kind of event is identified when the same address and data is found in error (fixed read data) for several consecutive read cycles. A confrontation of SEU rates derived from predictions to those measured in flight has shown that: - error rate is underestimated for HM62256 using standard prediction models, - error rate can be under or over-estimated for HM65756 but the dispersion on heavy-ion ground results does not allow us to conclude. (A.C.)

Event-by-event simulation of quantum phenomena

NARCIS (Netherlands)

Raedt, H. De; Raedt, K. De; Michielsen, K.; Landau, DP; Lewis, SP; Schuttler, HB

2006-01-01

In various basic experiments in quantum physics, observations are recorded event-by-event. The final outcome of such experiments can be computed according to the rules of quantum theory but quantum theory does not describe single events. In this paper, we describe a stimulation approach that does

Measurements of dose with individual FAMOS transistors

Energy Technology Data Exchange (ETDEWEB)

Scheick, L.Z.; McNulty, P.J.; Roth, D.R.; Davis, M.G.; Mason, B.E.

1999-12-01

A new method is described for measuring the doses absorbed by microstructures from an exposure to ionizing radiation. The decrease in the duration of UltraViolet light (UV) exposure required to erase each cell of a commercial UltraViolet erasable Programmable Read Only Memory (UVPROM) correlates with the dose absorbed by the floating gate of that transistor. This technique facilitates analysis of the microdose distribution across the array and the occurrence of Single Event Upset (SEU) like anomalous shifts due to rare large energy-deposition events.

Measurements of dose with individual FAMOS transistors

International Nuclear Information System (INIS)

Scheick, L.Z.; McNulty, P.J.; Roth, D.R.; Davis, M.G.; Mason, B.E.

1999-01-01

A new method is described for measuring the doses absorbed by microstructures from an exposure to ionizing radiation. The decrease in the duration of UltraViolet light (UV) exposure required to erase each cell of a commercial UltraViolet erasable Programmable Read Only Memory (UVPROM) correlates with the dose absorbed by the floating gate of that transistor. This technique facilitates analysis of the microdose distribution across the array and the occurrence of Single Event Upset (SEU) like anomalous shifts due to rare large energy-deposition events

Single-Event Effects in Power MOSFETs During Heavy Ion Irradiations Performed After Gamma-Ray Degradation

Science.gov (United States)

Busatto, G.; De Luca, V.; Iannuzzo, F.; Sanseverino, A.; Velardi, F.

2013-10-01

The robustness of commercial power metal-oxide semiconductor field-effect transistors to combined gamma-heavy ion irradiation has been investigated, evidence that the degradation of the gate oxide caused by the γ irradiation can severely corrupt the robustness to single-event effects and drastically modify the physical behavior of the device under test after the impact of a heavy ion. A decrease of the critical voltages at which destructive burnouts and gate ruptures for heavy ion impact appear, has been detected in the devices under test, which were previously irradiated with γ rays. In addition, the amount of critical voltage reduction is strictly related to the amount of the absorbed γ-ray dose. Furthermore, at the failure voltage, the behavior of the device is affected by the conduction of a current through the gate oxide. Moreover, the single-event gate rupture” of the device appears at lower voltages because of the reduction of the Fowler-Nordheim limit in the γ-irradiated devices.

Charge collection and SEU mechanisms

Science.gov (United States)

Musseau, O.

1994-01-01

In the interaction of cosmic ions with microelectronic devices a dense electron-hole plasma is created along the ion track. Carriers are separated and transported by the electric field and under the action of the concentration gradient. The subsequent collection of these carriers induces a transient current at some electrical node of the device. This "ionocurrent" (single ion induced current) acts as any electrical perturbation in the device, propagating in the circuit and inducing failures. In bistable systems (registers, memories) the stored data can be upset. In clocked devices (microprocessors) the parasitic perturbation may propagate through the device to the outputs. This type of failure only effects the information, and do not degrade the functionally of the device. The purpose of this paper is to review the mechanisms of single event upset in microelectronic devices. Experimental and theoretical results are presented, and actual questions and problems are discussed. A brief introduction recalls the creation of the dense plasma of electron-hole pairs. The basic processes for charge collection in a simple np junction (drift and diffusion) are presented. The funneling-field effect is discussed and experimental results are compared to numerical simulations and semi-empirical models. Charge collection in actual microelectronic structures is then presented. Due to the parasitic elements, coupling effects are observed. Geometrical effects, in densely packed structures, results in multiple errors. Electronic couplings are due to the carriers in excess, acting as minority carriers, that trigger parasitic bipolar transistors. Single event upset of memory cells is discussed, based on numerical and experimental data. The main parameters for device characterization are presented. From the physical interpretation of charge collection mechanisms, the intrinsic sensitivity of various microelectronic technologies is determined and compared to experimental data. Scaling laws

A Novel Approach to Estimating Nitrous Oxide Emissions during Wetting Events from Single-Timepoint Flux Measurements.

Science.gov (United States)

Davis, Brian W; Needelman, Brian A; Cavigelli, Michel A; Yarwood, Stephanie A; Maul, Jude E; Bagley, Gwendolyn A; Mirsky, Steven B

2017-03-01

Precipitation and irrigation induce pulses of NO emissions in agricultural soils, but the magnitude, duration, and timing of these pulses remain uncertain. This uncertainty makes it difficult to accurately extrapolate emissions from unmeasured time periods between chamber sampling events. Therefore, we developed a modeling protocol to predict NO emissions from data collected daily for 7 d after wetting events. Within a cover crop-based corn ( L.) production system in Beltsville, MD, we conducted the 7-d time series during four time periods representing a range of corn growth stages in 2013 and 2014. Treatments included mixtures and monocultures of grass and legume cover crops that were fertilized with pelletized poultry litter or urea-ammonium nitrate solution (9-276 kg N ha). Most fluxes did not exhibit the expected exponential decay over time (82%); therefore, cumulative emissions were calculated using trapezoidal integration over 7 d after the wetting event. Cumulative 7-d emissions were well correlated with single point gas fluxes on the second day after a wetting event using a generalized linear mixed model (ln[emissions] = 0.809∙ln[flux] + 2.47). Soil chemical covariates before or after a wetting event were weakly associated with cumulative emissions. The ratio of dissolved organic C to total inorganic N was negatively correlated with cumulative emissions ( = 0.23-0.29), whereas nitrate was positively correlated with cumulative emissions ( = 0.23-0.33). Our model is an innovative approach that is calibrated using site-specific time series data, which may then be used to estimate short-term NO emissions after wetting events using only a single flux measurement. Copyright © by the American Society of Agronomy, Crop Science Society of America, and Soil Science Society of America, Inc.

Two-dimensional numerical simulation of the effect of single event burnout for n-channel VDMOSFET

International Nuclear Information System (INIS)

Guo Hongxia; Chen Yusheng; Wang Wei; Zhao Jinlong; Zhang Yimen; Zhou Hui

2004-01-01

2D MEDICI simulator is used to investigate the effect of Single Event Burnout (SEB) for n-channel power VDMOSFETs. The simulation results are consistent with experimental results which have been published. The simulation results are of great interest for a better understanding of the occurrence of events. The effects of the minority carrier lifetime in the base region, the base width and the emitter doping density on SEB susceptibility are verified. Some hardening solutions to SEB are provided. The work shows that the 2D simulator MEDICI is an useful tool for burnout prediction and for the evaluation of hardening solutions. (authors)

Use of nuclear data for space and aeronautic designs

International Nuclear Information System (INIS)

Palau, M.C.; Carriere, Th.; Buard, B.; Weulersse, C.; Saigne, F.; Wrobel, F.

2008-01-01

Until recently, the effects of radiation environment on on-board electronics on launchers and aircraft had not been seriously taken into account. The situation has changed. And one of the most significant effects observed on on-board electronics is what we call Single Event Upset (SEU). This talk explains how the combination of electrical sensitivity of components and nuclear physics is important in the calculation of SEU rates, and emphasizes the aspects of nuclear physics useful to give the probability for a dangerous event to occur. Some circumvention methods will be rapidly identified. (authors)

Use of nuclear data for space and aeronautic designs

Energy Technology Data Exchange (ETDEWEB)

Palau, M.C.; Carriere, Th. [Astrium ST, 78 - Les Mureaux (France); Buard, B.; Weulersse, C. [EADS IN, 92 - Suresnes (France); Saigne, F. [CEM2, 34 - Montpellier (France); Wrobel, F. [Nice Univ., LPES (France)

2008-07-01

Until recently, the effects of radiation environment on on-board electronics on launchers and aircraft had not been seriously taken into account. The situation has changed. And one of the most significant effects observed on on-board electronics is what we call Single Event Upset (SEU). This talk explains how the combination of electrical sensitivity of components and nuclear physics is important in the calculation of SEU rates, and emphasizes the aspects of nuclear physics useful to give the probability for a dangerous event to occur. Some circumvention methods will be rapidly identified. (authors)

Single-Trial Event-Related Potential Based Rapid Image Triage System

Directory of Open Access Journals (Sweden)

Ke Yu

2011-06-01

Full Text Available Searching for points of interest (POI in large-volume imagery is a challenging problem with few good solutions. In this work, a neural engineering approach called rapid image triage (RIT which could offer about a ten-fold speed up in POI searching is developed. It is essentially a cortically-coupled computer vision technique, whereby the user is presented bursts of images at a speed of 6–15 images per second and then neural signals called event-related potential (ERP is used as the ‘cue’ for user seeing images of high relevance likelihood. Compared to past efforts, the implemented system has several unique features: (1 it applies overlapping frames in image chip preparation, to ensure rapid image triage performance; (2 a novel common spatial-temporal pattern (CSTP algorithm that makes use of both spatial and temporal patterns of ERP topography is proposed for high-accuracy single-trial ERP detection; (3 a weighted version of probabilistic support-vector-machine (SVM is used to address the inherent unbalanced nature of single-trial ERP detection for RIT. High accuracy, fast learning, and real-time capability of the developed system shown on 20 subjects demonstrate the feasibility of a brainmachine integrated rapid image triage system for fast detection of POI from large-volume imagery.

Effects of Cabin Upsets on Adsorption Columns for Air Revitalization

Science.gov (United States)

LeVan, Douglas

1999-01-01

The National Aeronautics and Space Administration (NASA) utilizes adsorption technology as part of contaminant removal systems designed for long term missions. A variety of trace contaminants can be effectively removed from gas streams by adsorption onto activated carbon. An activated carbon adsorption column meets NASA's requirements of a lightweight and efficient means of controlling trace contaminant levels aboard spacecraft and space stations. The activated carbon bed is part of the Trace Contaminant Control System (TCCS) which is utilized to purify the cabin atmosphere. TCCS designs oversize the adsorption columns to account for irregular fluctuations in cabin atmospheric conditions. Variations in the cabin atmosphere include changes in contaminant concentrations, temperature, and relative humidity. Excessively large deviations from typical conditions can result from unusual crew activity, equipment malfunctions, or even fires. The research carried out under this award focussed in detail on the effects of cabin upsets on the performance of activated carbon adsorption columns. Both experiments and modeling were performed with an emphasis on the roll of a change in relative humidity on adsorption of trace contaminants. A flow through fixed-bed apparatus was constructed at the NASA Ames Research Center, and experiments were performed there. Modeling work was performed at the University of Virginia.

Highly focused ion beams in integrated circuit testing

International Nuclear Information System (INIS)

Horn, K.M.; Dodd, P.E.; Doyle, B.L.

1996-01-01

The nuclear microprobe has proven to be a useful tool in radiation testing of integrated circuits. This paper reviews single event upset (SEU) and ion beam induced charge collection (IBICC) imaging techniques, with special attention to damage-dependent effects. Comparisons of IBICC measurements with three-dimensional charge transport simulations of charge collection are then presented for isolated p-channel field effect transistors under conducting and non-conducting bias conditions

Total dose and dose rate radiation characterization of EPI-CMOS radiation hardened memory and microprocessor devices

International Nuclear Information System (INIS)

Gingerich, B.L.; Hermsen, J.M.; Lee, J.C.; Schroeder, J.E.

1984-01-01

The process, circuit discription, and total dose radiation characteristics are presented for two second generation hardened 4K EPI-CMOS RAMs and a first generation 80C85 microprocessor. Total dose radiation performance is presented to 10M rad-Si and effects of biasing and operating conditions are discussed. The dose rate sensitivity of the 4K RAMs is also presented along with single event upset (SEU) test data

Formation and Decay of the Inner Electron Radiation Belt

Science.gov (United States)

2017-01-09

a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1. REPORT DATE (DD-MM-YYYY) 09-01-2017 2. REPORT TYPE...radiation belt: CRAND and trapped solar protons......17 APPENDIX C - Inward diffusion and loss of radiation belt protons...transfer orbit that can be damaged by the intense charged -particle environment. Protons are the prominent hazard, often causing single event upsets in

A Novel Application of Machine Learning Methods to Model Microcontroller Upset Due to Intentional Electromagnetic Interference

Science.gov (United States)

Bilalic, Rusmir

A novel application of support vector machines (SVMs), artificial neural networks (ANNs), and Gaussian processes (GPs) for machine learning (GPML) to model microcontroller unit (MCU) upset due to intentional electromagnetic interference (IEMI) is presented. In this approach, an MCU performs a counting operation (0-7) while electromagnetic interference in the form of a radio frequency (RF) pulse is direct-injected into the MCU clock line. Injection times with respect to the clock signal are the clock low, clock rising edge, clock high, and the clock falling edge periods in the clock window during which the MCU is performing initialization and executing the counting procedure. The intent is to cause disruption in the counting operation and model the probability of effect (PoE) using machine learning tools. Five experiments were executed as part of this research, each of which contained a set of 38,300 training points and 38,300 test points, for a total of 383,000 total points with the following experiment variables: injection times with respect to the clock signal, injected RF power, injected RF pulse width, and injected RF frequency. For the 191,500 training points, the average training error was 12.47%, while for the 191,500 test points the average test error was 14.85%, meaning that on average, the machine was able to predict MCU upset with an 85.15% accuracy. Leaving out the results for the worst-performing model (SVM with a linear kernel), the test prediction accuracy for the remaining machines is almost 89%. All three machine learning methods (ANNs, SVMs, and GPML) showed excellent and consistent results in their ability to model and predict the PoE on an MCU due to IEMI. The GP approach performed best during training with a 7.43% average training error, while the ANN technique was most accurate during the test with a 10.80% error.

A new method for explicit modelling of single failure event within different common cause failure groups

International Nuclear Information System (INIS)

Kančev, Duško; Čepin, Marko

2012-01-01

Redundancy and diversity are the main principles of the safety systems in the nuclear industry. Implementation of safety components redundancy has been acknowledged as an effective approach for assuring high levels of system reliability. The existence of redundant components, identical in most of the cases, implicates a probability of their simultaneous failure due to a shared cause—a common cause failure. This paper presents a new method for explicit modelling of single component failure event within multiple common cause failure groups simultaneously. The method is based on a modification of the frequently utilised Beta Factor parametric model. The motivation for development of this method lays in the fact that one of the most widespread softwares for fault tree and event tree modelling as part of the probabilistic safety assessment does not comprise the option for simultaneous assignment of single failure event to multiple common cause failure groups. In that sense, the proposed method can be seen as an advantage of the explicit modelling of common cause failures. A standard standby safety system is selected as a case study for application and study of the proposed methodology. The results and insights implicate improved, more transparent and more comprehensive models within probabilistic safety assessment.

A novel back-up control structure to manage nonroutine steam upsets in industrial methanol distillation columns

DEFF Research Database (Denmark)

Udugama, Isuru A.; Zander, Cornina; Mansouri, Seyed Soheil

2017-01-01

Industrial methanol production plants have extensive heat integration to achieve energy efficient operations where steam generated from these heat integration operations are used to provide reboiler duty for methanol distillation columns that purify crude methanol produced into industrial AA grade...... supervisory layer to control the column during these non-routine process upsets. These control schemes were tested against realistic reboiler duty disturbances that can occur in an industrial process. The tests revealed that both the MPC and supervisory systems control structures are able to regulate...... the process, even during sudden drops in reboiler duty. However, the cost of implementation and the relative simplicity will likely favour the implementation of the supervisory control structure in an industrial environment....

Radiation Mitigation and Power Optimization Design Tools for Reconfigurable Hardware in Orbit

Science.gov (United States)

French, Matthew; Graham, Paul; Wirthlin, Michael; Wang, Li; Larchev, Gregory

2005-01-01

The Reconfigurable Hardware in Orbit (RHinO)project is focused on creating a set of design tools that facilitate and automate design techniques for reconfigurable computing in space, using SRAM-based field-programmable-gate-array (FPGA) technology. In the second year of the project, design tools that leverage an established FPGA design environment have been created to visualize and analyze an FPGA circuit for radiation weaknesses and power inefficiencies. For radiation, a single event Upset (SEU) emulator, persistence analysis tool, and a half-latch removal tool for Xilinx/Virtex-II devices have been created. Research is underway on a persistence mitigation tool and multiple bit upsets (MBU) studies. For power, synthesis level dynamic power visualization and analysis tools have been completed. Power optimization tools are under development and preliminary test results are positive.

Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

Energy Technology Data Exchange (ETDEWEB)

Gaillardin, M., E-mail: marc.gaillardin@cea.fr [CEA, DAM, DIF, F-91297 Arpajon (France); Raine, M.; Paillet, P. [CEA, DAM, DIF, F-91297 Arpajon (France); Adell, P.C. [Jet Propulsion Laboratory, Pasadena, CA 91101 (United States); Girard, S. [Université de Saint-Etienne, Laboratoire H. Curien, UMR-5516, 42000 Saint-Etienne (France); Duhamel, O. [CEA, DAM, DIF, F-91297 Arpajon (France); Andrieu, F.; Barraud, S.; Faynot, O. [CEA, LETI-Minatec, 17 avenue des Martyrs, 38000 Grenoble (France)

2015-12-15

We investigate Single-Event Transients (SET) in different designs of multiple-gate devices made of FinFETs with various geometries. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.

Effect of material parameters on stress wave propagation during fast upsetting

Institute of Scientific and Technical Information of China (English)

WANG Zhong-jin; CHENG Li-dong

2008-01-01

Based'on a dynamic analysis method and an explicit algorithm, a dynamic explicit finite element code was developed for modeling the fast upsetting process of block under drop hammer impact, in which the hammer velocity during the deformation was calculated by energy conservation law according to the operating principle of hammer equipment. The stress wave propagation and its effect on the deformation were analyzed by the stress and strain distributions. Industrial pure lead, oxygen-free high-conductivity (OFHC) copper and 7039 aluminum alloy were chosen to investigate the effect of material parameters on the stress wave propagation. The results show that the stress wave propagates from top to bottom of block, and then reflects back when it reaches the bottom surface. After that, stress wave propagates and reflects repeatedly between the upper surface and bottom surface. The stress wave propagation has a significant effect on the deformation at the initial stage, and then becomes weak at the middle-final stage. When the ratio of elastic modulus or the slope of stress-strain curve to mass density becomes larger, the velocity of stress wave propagation increases, and the influence of stress wave on the deformation becomes small.

A review of the number and severity of injuries sustained following a single motocross event.

Science.gov (United States)

Dick, Charles G; White, Simon; Bopf, Daniel

2014-03-01

Competitive and recreational motocross is an increasingly popular sport in Australia and worldwide. Children as young as 4-year-old can participate in this activity. It is recognised that this is a high risk sport despite the use of protective equipment and developments in course design. Injuries sustained range from minor contusions and fractures to severe life threatening spine and head injuries in adults and the paediatric population. In addition organised events can generate a surge of trauma that can burden small local hospitals, resulting in an unpredicted increase in the workload with subsequent delays to treatment. We present the trauma workload generated in a district hospital following a single motocross event. All patients attending a district hospital emergency department with injuries sustained during a single motocross event were identified through hospital and ambulance records. The nature of their injuries and the treatment required, the length of hospital stay and operative theatre time generated by their injuries were obtained from hospital and theatre records. 14 patients attended the emergency department over a 24-hour period, requiring 5 ambulances from the scene. 7 patients required hospital admission with 7 operations performed, consuming 12.2 h of operating theatre time and 21 days of hospital beds. 2 patients sustained head injuries requiring observation, one of which was transferred to a spinal unit for management of their spinal injuries. Motocross is a popular sport and at times has unacceptable risks of injury in organised competitions, especially with regards to paediatric injuries. Better course design, restrictions on participant age and limitations in vehicle speeds may help reduce the number of severe injuries. These events can also generate a sudden trauma burden to local hospital facilities with knock on effects on waiting times for theatre and potentially compromising not only treatment of the injured participants but also

Top quark polarization in t-channel single top-quark events with the ATLAS detector

CERN Document Server

Chitishvili, Mariam

2017-01-01

This summary presents the measurement of the top‐quark polarization in t-channel single top quarks with the ATLAS detector at the LHC. Monte Carlo simulated events are used. Selected events contain one lepton, large missing transverse momentum and exactly two jets, with one of them identified as b-jet. Selection cuts are used to identify the t-channel topology at reconstruction level. The polarization is measured, from an asymmetry in an angular distribution, at parton level by correcting the reconstructed angular distribution for detector effects. This project provides an overview on how a "standard" physics analysis is performed within ATLAS. The analysis is performed in ROOT. Simulation data is reconstructed to perform an unfolded measurement of a given property of a fundamental particle within the Standard Model. Finally results are compared with theoretical predictions.

Properties of Coronal Shocks at the Origin of SEP events Observed by Only One Single Spacecraft

Science.gov (United States)

Lario, D.; Kwon, R.

2017-12-01

The simultaneous observation of solar energetic particle (SEP) events by multiple spacecraft distributed in the interplanetary medium depends not only on the spatial separation among the different spacecraft, but also on the properties of the particle sources and the characteristics of the SEP transport in interplanetary space. Among the SEP events observed by STEREO-A, STEREO-B and/or near-Earth spacecraft during solar cycle 24, we select SEP events observed by a single spacecraft (specifically, the SEP events observed only by near-Earth spacecraft on 2012 April 5, 2011 September 4, and 2013 August 17). We analyze whether the properties of the coronal shock associated with the origin of the events (as seen in extreme-ultraviolet and white-light coronal images) differ from those associated with SEP events observed by two or three spacecraft. For the selected events we find that the associated CMEs are, in general, narrower than those associated with SEP events observed by two or three spacecraft. The confined extension of the parent coronal shock and the absence of magnetic connection between distant spacecraft and the regions of the expanding coronal shock able to efficiently accelerate SEPs seem to be the conditions leading to intense SEP events observed only over narrow regions of interplanetary space by spacecraft magnetically connected to regions close to the parent eruption site. Weak and gradual intensity increases observed in extended regions of space might involve transport processes and/or later connections established with interplanetary shocks. Systematic analyses of a larger number of events are required before drawing firm conclusions.

Observation of Single Isolated Electrons of High Transverse Momentum in Events with Missing Transverse Energy at the CERN pp Collider

DEFF Research Database (Denmark)

Banner, M.; Kofoed-Hansen, O.

1983-01-01

We report the results of a search for single isolated electrons of high transverse momentum at the CERN collider. Above 15 GeV/c, four events are found having large missing transverse energy along a direction opposite in azimuth to that of the high-pT electron. Both the configuration of the events...

Automated Detection of Obstructive Sleep Apnea Events from a Single-Lead Electrocardiogram Using a Convolutional Neural Network.

Science.gov (United States)

Urtnasan, Erdenebayar; Park, Jong-Uk; Joo, Eun-Yeon; Lee, Kyoung-Joung

2018-04-23

In this study, we propose a method for the automated detection of obstructive sleep apnea (OSA) from a single-lead electrocardiogram (ECG) using a convolutional neural network (CNN). A CNN model was designed with six optimized convolution layers including activation, pooling, and dropout layers. One-dimensional (1D) convolution, rectified linear units (ReLU), and max pooling were applied to the convolution, activation, and pooling layers, respectively. For training and evaluation of the CNN model, a single-lead ECG dataset was collected from 82 subjects with OSA and was divided into training (including data from 63 patients with 34,281 events) and testing (including data from 19 patients with 8571 events) datasets. Using this CNN model, a precision of 0.99%, a recall of 0.99%, and an F 1 -score of 0.99% were attained with the training dataset; these values were all 0.96% when the CNN was applied to the testing dataset. These results show that the proposed CNN model can be used to detect OSA accurately on the basis of a single-lead ECG. Ultimately, this CNN model may be used as a screening tool for those suspected to suffer from OSA.

Neutron induced permanent damage in Josephson junctions

International Nuclear Information System (INIS)

Mueller, G.P.; Rosen, M.

1982-01-01

14 MeV neutron induced permanent changes in the critical current density of Josephson junctions due to displacement damage in the junction barrier are estimated using a worst case model and the binary collision simulation code MARLOWE. No likelihood of single event hard upsets is found in this model. It is estimated that a fluence of 10 18 -10 19 neutrons/cm 2 are required to change the critical current density by 5%

submitter Methodologies for the Statistical Analysis of Memory Response to Radiation

CERN Document Server

Bosser, Alexandre L; Tsiligiannis, Georgios; Frost, Christopher D; Zadeh, Ali; Jaatinen, Jukka; Javanainen, Arto; Puchner, Helmut; Saigne, Frederic; Virtanen, Ari; Wrobel, Frederic; Dilillo, Luigi

2016-01-01

Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study [1].

Self-Testing Computer Memory

Science.gov (United States)

Chau, Savio, N.; Rennels, David A.

1988-01-01

Memory system for computer repeatedly tests itself during brief, regular interruptions of normal processing of data. Detects and corrects transient faults as single-event upsets (changes in bits due to ionizing radiation) within milliseconds after occuring. Self-testing concept surpasses conventional by actively flushing latent defects out of memory and attempting to correct before accumulating beyond capacity for self-correction or detection. Cost of improvement modest increase in complexity of circuitry and operating time.

Versatile single-chip event sequencer for atomic physics experiments

Science.gov (United States)

Eyler, Edward

2010-03-01

A very inexpensive dsPIC microcontroller with internal 32-bit counters is used to produce a flexible timing signal generator with up to 16 TTL-compatible digital outputs, with a time resolution and accuracy of 50 ns. This time resolution is easily sufficient for event sequencing in typical experiments involving cold atoms or laser spectroscopy. This single-chip device is capable of triggered operation and can also function as a sweeping delay generator. With one additional chip it can also concurrently produce accurately timed analog ramps, and another one-chip addition allows real-time control from an external computer. Compared to an FPGA-based digital pattern generator, this design is slower but simpler and more flexible, and it can be reprogrammed using ordinary `C' code without special knowledge. I will also describe the use of the same microcontroller with additional hardware to implement a digital lock-in amplifier and PID controller for laser locking, including a simple graphics-based control unit. This work is supported in part by the NSF.

Search for anomalous Wtb couplings and top FCNC in t-channel single-top-quark events in the CMS experiment

CERN Document Server

Tsirova, Natalia

2015-01-01

Single-top-quark events in the t-channel are used to probe Wtb anomalous couplings and to search for top-quark Flavor-Changing Neutral Current (FCNC) interactions in proton-proton collisions with the CMS experiment. A Bayesian neural network is used to discriminate between signal and backgrounds. The observed event yields are consistent with SM prediction, and exclusion limits at 95\\% C.L. are determined.

Evolution of microstructure and texture in copper during repetitive extrusion-upsetting and subsequent annealing

DEFF Research Database (Denmark)

Chen, Q.; Shu, D. Y.; Lin, J.

2017-01-01

The evolution of the microstructure and texture in copper has been studied during repetitive extrusion-upsetting (REU) to a total von Mises strain of 4.7 and during subsequent annealing at different temperatures. It is found that the texture is significantly altered by each deformation pass...... strain of 4.7 is measured to be ∼0.3μm. This refined microstructure is unstable at room temperature as is evident from the presence of a small number of recrystallized grains in the deformed matrix. Pronounced recrystallization took place during annealing at 200 °C for 1 h with recrystallized grains...... developing predominantly in high misorientation regions. At 350 ºC the microstructure is fully recrystallized with an average grain size of only 2.3 μm and a very weak crystallographic texture. This REU-processed and subsequently annealed material is considered to be potentially suitable for using...

Single-cell analysis of pyroptosis dynamics reveals conserved GSDMD-mediated subcellular events that precede plasma membrane rupture.

Science.gov (United States)

de Vasconcelos, Nathalia M; Van Opdenbosch, Nina; Van Gorp, Hanne; Parthoens, Eef; Lamkanfi, Mohamed

2018-04-17

Pyroptosis is rapidly emerging as a mechanism of anti-microbial host defense, and of extracellular release of the inflammasome-dependent cytokines interleukin (IL)-1β and IL-18, which contributes to autoinflammatory pathology. Caspases 1, 4, 5 and 11 trigger this regulated form of necrosis by cleaving the pyroptosis effector gasdermin D (GSDMD), causing its pore-forming amino-terminal domain to oligomerize and perforate the plasma membrane. However, the subcellular events that precede pyroptotic cell lysis are ill defined. In this study, we triggered primary macrophages to undergo pyroptosis from three inflammasome types and recorded their dynamics and morphology using high-resolution live-cell spinning disk confocal laser microscopy. Based on quantitative analysis of single-cell subcellular events, we propose a model of pyroptotic cell disintegration that is initiated by opening of GSDMD-dependent ion channels or pores that are more restrictive than recently proposed GSDMD pores, followed by osmotic cell swelling, commitment of mitochondria and other membrane-bound organelles prior to sudden rupture of the plasma membrane and full permeability to intracellular proteins. This study provides a dynamic framework for understanding cellular changes that occur during pyroptosis, and charts a chronological sequence of GSDMD-mediated subcellular events that define pyroptotic cell death at the single-cell level.

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

International Nuclear Information System (INIS)

Chen Rui; Han Jian-Wei; Zheng Han-Sheng; Yu Yong-Tao; Shangguang Shi-Peng; Feng Guo-Qiang; Ma Ying-Qi

2015-01-01

By using the pulsed laser single event effect facility and electro-static discharge (ESD) test system, the characteristics of the “high current”, relation with external stimulus and relevance to impacted modes of single event latch-up (SEL) and transient-induced latch-up (TLU) are studied, respectively, for a 12-bit complementary metal–oxide semiconductor (CMOS) analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between “high current” induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the “high current” induced by SEL and for that by TLU. However, for SEL, the minority carrier diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node (the ground node) is the cause of the minority carrier diffusion for TLU. (paper)

A full-angle Monte-Carlo scattering technique including cumulative and single-event Rutherford scattering in plasmas

Science.gov (United States)

Higginson, Drew P.

2017-11-01

We describe and justify a full-angle scattering (FAS) method to faithfully reproduce the accumulated differential angular Rutherford scattering probability distribution function (pdf) of particles in a plasma. The FAS method splits the scattering events into two regions. At small angles it is described by cumulative scattering events resulting, via the central limit theorem, in a Gaussian-like pdf; at larger angles it is described by single-event scatters and retains a pdf that follows the form of the Rutherford differential cross-section. The FAS method is verified using discrete Monte-Carlo scattering simulations run at small timesteps to include each individual scattering event. We identify the FAS regime of interest as where the ratio of temporal/spatial scale-of-interest to slowing-down time/length is from 10-3 to 0.3-0.7; the upper limit corresponds to Coulomb logarithm of 20-2, respectively. Two test problems, high-velocity interpenetrating plasma flows and keV-temperature ion equilibration, are used to highlight systems where including FAS is important to capture relevant physics.

Test Standard Revision Update: JESD57, "Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation"

Science.gov (United States)

Lauenstein, Jean-Marie

2015-01-01

The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. In this talk, we place this test standard into context with other relevant radiation test standards to show its importance for single-event effect radiation testing for space applications. We show the range of industry, government, and end-user party involvement in the revision. Finally, we highlight some of the key changes being made and discuss the trade-space in which setting standards must be made to be both useful and broadly adopted.

The manufacture of system for testing static random access memory radiation effect

International Nuclear Information System (INIS)

Chen Rui; Yang Chen

2008-01-01

Space radiation effects will lead to single event upset, event latch up and other phenomena in SRAM devices. This paper introduces the hardware, software composition and related testing technology of SRAM radiation effect testing device. Through to the SRAM chip current detection and power protection, it has solved the SRAM chip damage question in the SRAM experiment. It has accessed to the expected experimental data by using the device in different source of radiation conducted on SRAM Experimental study of radiation effects. It provides important references in the assessment of operational life and reinforcement of the memory carried in the satellites. (authors)

Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

Science.gov (United States)

Zeinolabedinzadeh, Saeed; Ying, Hanbin; Fleetwood, Zachary E.; Roche, Nicolas J.-H.; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Cressler, John D.

2017-01-01

The single-event transient (SET) response of two different silicon-germanium (SiGe) X-band (8-12 GHz) low noise amplifier (LNA) topologies is fully investigated in this paper. The two LNAs were designed and implemented in 130nm SiGe HBT BiCMOS process technology. Two-photon absorption (TPA) laser pulses were utilized to induce transients within various devices in these LNAs. Impulse response theory is identified as a useful tool for predicting the settling behavior of the LNAs subjected to heavy ion strikes. Comprehensive device and circuit level modeling and simulations were performed to accurately simulate the behavior of the circuits under ion strikes. The simulations agree well with TPA measurements. The simulation, modeling and analysis presented in this paper can be applied for any other circuit topologies for SET modeling and prediction.

Physical Processes and Applications of the Monte Carlo Radiative Energy Deposition (MRED) Code

Science.gov (United States)

Reed, Robert A.; Weller, Robert A.; Mendenhall, Marcus H.; Fleetwood, Daniel M.; Warren, Kevin M.; Sierawski, Brian D.; King, Michael P.; Schrimpf, Ronald D.; Auden, Elizabeth C.

2015-08-01

MRED is a Python-language scriptable computer application that simulates radiation transport. It is the computational engine for the on-line tool CRÈME-MC. MRED is based on c++ code from Geant4 with additional Fortran components to simulate electron transport and nuclear reactions with high precision. We provide a detailed description of the structure of MRED and the implementation of the simulation of physical processes used to simulate radiation effects in electronic devices and circuits. Extensive discussion and references are provided that illustrate the validation of models used to implement specific simulations of relevant physical processes. Several applications of MRED are summarized that demonstrate its ability to predict and describe basic physical phenomena associated with irradiation of electronic circuits and devices. These include effects from single particle radiation (including both direct ionization and indirect ionization effects), dose enhancement effects, and displacement damage effects. MRED simulations have also helped to identify new single event upset mechanisms not previously observed by experiment, but since confirmed, including upsets due to muons and energetic electrons.

Measurement of top quark and W boson polarisation observables with t-channel single-top-quark events in the ATLAS experiment.

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00288626

This thesis presents two studies, one related with the alignment of the ATLAS Inner Detector tracking system and other with the measurement of top quark and W boson polarisation observables using t-channel single-top-quark events. The first topic describes the implementation of a monitoring tool, which is used to monitor the Level 1 alignment corrections obtained in the calibration loop, as well as the use of constraints on the momentum and impact parameters biases using $Z \\rightarrow\\mu\\mu$ events on the alignment algorithms. These techniques were developed during 2012 data taking campaign and provide the most accurate description of the ATLAS Inner Detector. The second topic presents a detailed measurement of top quark and W boson polarisation observables using the 20.3 $fb^{-1}$ of data collected by the ATLAS detector at $\\sqrt{s}$ = 8 TeV. The measurement is performed using $t$-channel single top quark events and exploits the feature that the produced top quark is highly polarised along the direction of ...

Measurement of the associated production of a single top quark and a W boson in single-lepton events with the ATLAS detector

Energy Technology Data Exchange (ETDEWEB)

Mergelmeyer, Sebastian

2016-06-15

The production of a single top quark in association with a W boson (Wt) is measured with the ATLAS detector using proton-proton collision events with one lepton, three jets and missing transverse energy at √(s)=8 TeV. Signal events are identified using an artificial neural network in an unconventional manner, addressing the large uncertainties due to the major background, which has an about 10 times larger cross section and a very similar signature compared with the Wt signal. State-of-the-art statistical methods are used to validate the modelling of the signal and the background, and to extract the cross section for Wt production. The cross section is found to be consistent with related measurements as well as the Standard Model prediction. In addition, a direct measurement of the CKM matrix element V{sub tb} is performed.

Measurement of the associated production of a single top quark and a W boson in single-lepton events with the ATLAS detector

International Nuclear Information System (INIS)

Mergelmeyer, Sebastian

2016-06-01

The production of a single top quark in association with a W boson (Wt) is measured with the ATLAS detector using proton-proton collision events with one lepton, three jets and missing transverse energy at √(s)=8 TeV. Signal events are identified using an artificial neural network in an unconventional manner, addressing the large uncertainties due to the major background, which has an about 10 times larger cross section and a very similar signature compared with the Wt signal. State-of-the-art statistical methods are used to validate the modelling of the signal and the background, and to extract the cross section for Wt production. The cross section is found to be consistent with related measurements as well as the Standard Model prediction. In addition, a direct measurement of the CKM matrix element V_t_b is performed.

Physical-Mechanisms Based Reliability Analysis For Emerging Technologies

Science.gov (United States)

2017-05-05

irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy," Appl. Phys. Lett., vol. 106, article...Chan, A. Raman, and M. Turowski, "State and angular dependence of single-event upsets in an asymmetric RC-hardened SRAM using deep trench capacitors...Trinczek, E. W. Blackmore, S. J. Wen , R. Wong, B. Narasimham, J. A. Pellish and H. Puchner, "The contribution of low-energy protons to the total

Radiation Analysis Program

Science.gov (United States)

2018-02-28

distribution is unlimited.  The second project advanced within this grant is related to beam and total dose testing of modern microcontrollers and... PROJECT NUMBER 2181 Craig Kief 5e. TASK NUMBER PPM00019523 5f. WORK UNIT NUMBER EF122950 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8...associated with on orbit assets. Research resulted in an on orbit test platform that provides the ability to observe single event upset information on the

An SEU rate prediction method for microprocessors of space applications

International Nuclear Information System (INIS)

Gao Jie; Li Qiang

2012-01-01

In this article,the relationship between static SEU (Single Event Upset) rate and dynamic SEU rate in microprocessors for satellites is studied by using process duty cycle concept and fault injection technique. The results are compared to in-orbit flight monitoring data. The results show that dynamic SEU rate by using process duty cycle can estimate in-orbit SEU rate of microprocessor reasonable; and the fault injection technique is a workable method to estimate SEU rate. (authors)

Search for anomalous Wtb couplings and top FCNC in t-channel single-top-quark events

CERN Document Server

CMS Collaboration

2014-01-01

Single-top-quark events in the $t$-channel are used to probe Wtb anomalous couplings and to search for top quark Flavor Changing Neutral Current (FCNC) interactions in proton-proton collisions at $\\sqrt{s}=7$ TeV. The analyzed data correspond to an integrated luminosity of 5~fb$^{-1}$. Events with the top quark decaying into a muon, neutrino and b-quark are selected. A Bayesian neural network is used to discriminate between signal and backgrounds. The observed event yields are consistent with SM prediction, and exclusion limits at 95\\% C.L. are determined. The exclusion limits on anomalous right vector and left tensor couplings of the Wtb vertex are found to be $|f_{V}^{R}|< 0.34$ and $|f_{T}^{L}|<0.09$. In the scenarios with FCNC tcg and tug couplings, limits on the coupling strengths are found to be $\\kappa_{tug}/\\Lambda < 1.8 \\cdot 10^{-2}~ \\mathrm{TeV^{-1}},\\ \\kappa_{tcg}/\\Lambda < 5.6 \\cdot 10^{-2} ~ \\mathrm{TeV^{-1}}$ which corresponds to limits on the branching ratios $Br(t~\\rightarrow~u+g)...

Observed differences in event structures of high-p/sub T/ π0 and single photon events produced in pp collisions at the CERN ISR

International Nuclear Information System (INIS)

Rahm, D.C.

1980-01-01

The direct photon production in pp collisions for c.m. energies 31 less than or equal to 63 GeV and transverse momenta of up to 9 GeV/c were measured at the ISR by use of a segmented lead/liquid argon calorimeter. The observed γ/π 0 ratio was found to be a significantly larger than zero at 4 GeV/c in p/sub T/, increasing to 0.4 at 9 GeV/c. The average multiplicity on the trigger side for the single-photon events was found to be significantly lower than for π 0 events. The correlations in Δy and Δphi between the trigger particle and an additional particle were found to differe mainly at small Δy and Δphi. 3 figures

The effect of event repetition on the production of story grammar in children's event narratives.

Science.gov (United States)

Feltis, Brooke B; Powell, Martine B; Roberts, Kim P

2011-03-01

This study examined the effect of event repetition on the amount and nature of story-grammar produced by children when recalling the event. Children aged 4 years (N=50) and 7 years (N=56) participated in either 1 or 6 occurrences of a highly similar event where details varied across the occurrences. Half the children in each age and event group recalled the last/single occurrence 5-6 days later and the other half recalled the last/single occurrence after 5-6 weeks (the final and single occurrence was the same). Children's free recall responses were classified according to the number and proportion of story-grammar elements (Stein & Glenn, 1979-setting, initiating event, internal response, plan, attempt, direct consequence, and resolution) as well as the prevalence of causal links between the individual story-grammar elements. More story-grammar detail and more links between individual story-grammar elements were reported about the final compared to single occurrence. The amount of story-grammar increased with age and decreased over time. Further, an interaction was revealed such that the effect of retention interval on the production of story-grammar was negligible for older children who experienced the repeated event. Event repetition has a beneficial effect on the production of children's story-grammar content in situations where event details varied from occasion to occasion. This study highlights the importance of eliciting free recall when conducting evidential interviews with child witnesses about repeated events. Copyright © 2011 Elsevier Ltd. All rights reserved.

R-process enrichment from a single event in an ancient dwarf galaxy.

Science.gov (United States)

Ji, Alexander P; Frebel, Anna; Chiti, Anirudh; Simon, Joshua D

2016-03-31

Elements heavier than zinc are synthesized through the rapid (r) and slow (s) neutron-capture processes. The main site of production of the r-process elements (such as europium) has been debated for nearly 60 years. Initial studies of trends in chemical abundances in old Milky Way halo stars suggested that these elements are produced continually, in sites such as core-collapse supernovae. But evidence from the local Universe favours the idea that r-process production occurs mainly during rare events, such as neutron star mergers. The appearance of a plateau of europium abundance in some dwarf spheroidal galaxies has been suggested as evidence for rare r-process enrichment in the early Universe, but only under the assumption that no gas accretes into those dwarf galaxies; gas accretion favours continual r-process enrichment in these systems. Furthermore, the universal r-process pattern has not been cleanly identified in dwarf spheroidals. The smaller, chemically simpler, and more ancient ultrafaint dwarf galaxies assembled shortly after the first stars formed, and are ideal systems with which to study nucleosynthesis events such as the r-process. Reticulum II is one such galaxy. The abundances of non-neutron-capture elements in this galaxy (and others like it) are similar to those in other old stars. Here, we report that seven of the nine brightest stars in Reticulum II, observed with high-resolution spectroscopy, show strong enhancements in heavy neutron-capture elements, with abundances that follow the universal r-process pattern beyond barium. The enhancement seen in this 'r-process galaxy' is two to three orders of magnitude higher than that detected in any other ultrafaint dwarf galaxy. This implies that a single, rare event produced the r-process material in Reticulum II. The r-process yield and event rate are incompatible with the source being ordinary core-collapse supernovae, but consistent with other possible sources, such as neutron star mergers.

Study of the intelligent control robustness with respect to radiations induced faults

International Nuclear Information System (INIS)

Cheynet, Ph.

1999-01-01

The so-called intelligent control techniques, such as Artificial Neural Networks and Fuzzy Logic, are considered as being potentially robust. Their digital implementation gives compact and powerful solutions to some problems difficult to be tackled by classical techniques. Such approaches might be used for applications working in harsh environment (nuclear and space). The aim of this thesis is to study the robustness of artificial neural networks and fuzzy logic against Single Event Upset faults, in order to evaluate their viability and their efficiency for onboard spacecraft processes. A set of experiments have been performed on a neural network and a fuzzy controller, both implementing real space applications: texture analysis from satellite images and wheel control of a martian rover. An original method, allowing to increase the recognition rate of any artificial neural network has been developed and used on the studied network. Digital architectures implementing the two studied techniques in this thesis, have been boarded on two scientific satellites. One is in flight since one year, the other will be launched in the end of 1999. Obtained results, both from software simulations, hardware fault injections or particle accelerator tests, show that intelligent control techniques have a significant robustness against Single Event Upset faults. Data issued from the flight experiment confirm these properties, showing that some onboard spacecraft processes can be reliably executed by digital artificial neural networks. (author)

Aftershock Sequences and Seismic-Like Organization of Acoustic Events Produced by a Single Propagating Crack

Science.gov (United States)

Alizee, D.; Bonamy, D.

2017-12-01

In inhomogeneous brittle solids like rocks, concrete or ceramics, one usually distinguish nominally brittle fracture, driven by the propagation of a single crack from quasibrittle one, resulting from the accumulation of many microcracks. The latter goes along with intermittent sharp noise, as e.g. revealed by the acoustic emission observed in lab scale compressive fracture experiments or at geophysical scale in the seismic activity. In both cases, statistical analyses have revealed a complex time-energy organization into aftershock sequences obeying a range of robust empirical scaling laws (the Omori-Utsu, productivity and Bath's law) that help carry out seismic hazard analysis and damage mitigation. These laws are usually conjectured to emerge from the collective dynamics of microcrack nucleation. In the experiments presented at AGU, we will show that such a statistical organization is not specific to the quasi-brittle multicracking situations, but also rules the acoustic events produced by a single crack slowly driven in an artificial rock made of sintered polymer beads. This simpler situation has advantageous properties (statistical stationarity in particular) permitting us to uncover the origins of these seismic laws: Both productivity law and Bath's law result from the scale free statistics for event energy and Omori-Utsu law results from the scale-free statistics of inter-event time. This yields predictions on how the associated parameters are related, which were analytically derived. Surprisingly, the so-obtained relations are also compatible with observations on lab scale compressive fracture experiments, suggesting that, in these complex multicracking situations also, the organization into aftershock sequences and associated seismic laws are also ruled by the propagation of individual microcrack fronts, and not by the collective, stress-mediated, microcrack nucleation. Conversely, the relations are not fulfilled in seismology signals, suggesting that

Application of high energy accelerator to study of single event burn-out (SEB)

Energy Technology Data Exchange (ETDEWEB)

Hada, Takashi; Aoki, Shiro; Nakamura, Masao; Matsuda, Sumio [National Space Development Agency of Japan, Tokyo (Japan); Hirao, Toshio; Nashiyama, Isamu; Hirose, Takayuki; Ohira, Hideharu; Nagai, Yuki

1996-12-01

Hitherto, as nuclear fission fragments of 252-Cf, one of radioactive matters have been used for elucidation of single event mechanism, this method has a limit for analysis of power MOSFET with long charge collection region (generally, empty layer) and is difficult to form the experiment simulating the space environment, because of their wide LET (Linear Energy Transfer) range and of short flying distance of about 15 micrometer. As a result, some irradiation experiments using an accelerator capable of forming charged particle beam with long flying distance and single energy became essential to elucidate the SEB mechanism. In this paper, an experiment result of SEB phenomenon using high energy accelerator was reported. As a result, following items were found: (1) With increase of impressed charge, collected charge shows two peaks, and also increases, (2) commercial power MOSFET shows about 280 V in SEB resistance, and power MOSFET developed for the space use shows about 320 V, which is improved about 40 V for the commercial one, and so forth. (G.K.)

Single event effect hardness for the front-end ASICs in the DAMPE satellite BGO calorimeter

Science.gov (United States)

Gao, Shan-Shan; Jiang, Di; Feng, Chang-Qing; Xi, Kai; Liu, Shu-Bin; An, Qi

2016-01-01

The Dark Matter Particle Explorer (DAMPE) is a Chinese scientific satellite designed for cosmic ray studies with a primary scientific goal of indirect detection of dark matter particles. As a crucial sub-detector, the BGO calorimeter measures the energy spectrum of cosmic rays in the energy range from 5 GeV to 10 TeV. In order to implement high-density front-end electronics (FEE) with the ability to measure 1848 signals from 616 photomultiplier tubes on the strictly constrained satellite platform, two kinds of 32-channel front-end ASICs, VA160 and VATA160, are customized. However, a space mission period of more than 3 years makes single event effects (SEEs) become threats to reliability. In order to evaluate SEE sensitivities of these chips and verify the effectiveness of mitigation methods, a series of laser-induced and heavy ion-induced SEE tests were performed. Benefiting from the single event latch-up (SEL) protection circuit for power supply, the triple module redundancy (TMR) technology for the configuration registers and the optimized sequential design for the data acquisition process, 52 VA160 chips and 32 VATA160 chips have been applied in the flight model of the BGO calorimeter with radiation hardness assurance. Supported by Strategic Priority Research Program on Space Science of the Chinese Academy of Sciences (XDA04040202-4) and Fundamental Research Funds for the Central Universities (WK2030040048)

Search for Flavour Changing Neutral Currents in single top events

CERN Document Server

CMS Collaboration

2013-01-01

A study of top-quark anomalous couplings is performed through the search for a single top-quark produced in association with a $Z$ boson. The event selection requires the presence of three isolated leptons, electrons or muons, and of at least one jet. The signal extraction is done using kinematic variables and information related to b-tagging, combined using a Boosted Decision Tree. The search is performed in a data sample corresponding to about 5 fb$^{-1}$ of proton-proton collisions at $\\sqrt{s}=7$ TeV recorded with the CMS detector. No evidence of flavor-changing neutral currents is observed and upper limits at 95\\% confidence level are determined. The corresponding upper limits on the coupling strengths of an effective model are found to be $\\kappa_{gut}/\\Lambda < 0.10$ TeV$^{-1}$, $\\kappa_{gct}/\\Lambda < 0.35$ TeV$^{-1}$, $\\kappa_{Zut}/\\Lambda < 0.45$ TeV$^{-1}$ and $\\kappa_{Zct}/\\Lambda < 2.27$ TeV$^{-1}$, where $\\Lambda$ is the expected scale at which new physics could appear. The equivalen...

It is highly unlikely that the development of an abdominal wall hernia can be attributable to a single strenuous event.

Science.gov (United States)

Pathak, Samir; Poston, Graeme J

2006-03-01

There is a commonly held belief that the development of a hernia can be attributed to a single strenuous or traumatic event. Hence, many litigants are successful in compensation claims, causing mounting financial burdens on employers, the courts, insurance companies and the tax-payer. However, there is very little scientific evidence to support this assertion. The aim of this study was to ascertain whether there was any causal link in this process. A total of 133 new patients with 135 abdominal herniae of all varieties (115 inguinal, 3 femoral, 9 umbilical, 4 incisional, and 4 ventral or epigastric), of which 25 were recurrent received structured questionnaires on arrival in the surgical clinic. These questionnaires covered all possible aetiological factors for hernia development (type of work, COAD, smoking, pregnancy, obesity, chronic bladder outflow obstruction, previous surgery including appendicectomy), in addition to any possible attribution to a single strenuous or traumatic event. We then reviewed the GP records in the surgery of all patients who answered positively to the latter possible cause. In the study group, 119 (89%) reported a gradual onset of symptoms. Of the 15 (12 male, 3 female; 11%) who believed that their hernia might be related to a single strenuous or traumatic event, 5 had no other aetiological factors. However, not one of the 15 was found to have contemporaneous forensic medical evidence to support their possible claim. We conclude that we are unable to find any clinical evidence to support the hypothesis that a hernia might develop as the result of one single strenuous or traumatic event. While we accept that this mechanism might still possibly occur, we believe that, at best, it is extremely uncommon. If a medical expert is preparing a report on such a case in a claim for personal injury, then they have a duty to the court to examine carefully all the contemporaneous medical records. If no clinical evidence exists to support the claim

Nano controllers characterization under radiation

International Nuclear Information System (INIS)

Bezerra, F.; Barde, S.; Carayon, J.L.; Sarthou, M.

1999-01-01

4 commercial nano-controllers (PIC16LC84, PIC16C73A, PIC16C76 and ST62E25) from MICROCHIP and SGS-Thomson have been characterized under heavy-ions, protons and total dose. The preliminary results show that PIC16LC84 has to be banned from the selection because it can not sustain high cumulated dose (its Idd begins to shift at 6 krads) and that its E 2 PROM code memory is too sensitive to SEU (single event upset). The 3 PICs have been tested with heavy-ions, the results show that they are sensible to upsets and latch-up, nevertheless no latch-up has been observed under proton irradiation. The sensitivity to latch-up does not matter a lot because PICs consume very little and it is planned to implement them in a tolerant design. (A.C.)

IBM ThinkPad radiation testing and recovery during EUROMIR missions

International Nuclear Information System (INIS)

Martignano, M.; Harboe-Sorensen, R.

1995-01-01

This paper presents the results of an experiment, conducted on-board the Russian MIR Space Station during a joint Russian and European mission, EUROMIR '94. A commercially available IBM ThinkPad 750C was evaluated by running a software system which monitored the notebook's behavior and counted the number of single event upsets. The used software system and ground verification tests are also presented. Finally, another software system, able to ruggedize normal personal computers for usage in space, is described

Design and measurements of SEU tolerant latches

CERN Document Server

Menouni, M; Barbero, M; Beccherle, R; Breugnon, P; Ely, R; Fougeron, D; García-Sciveres, M; Gnani, D; Hemperek, T; Karagounis, M; Kluit, R; Mekkaoui, A; Rozanov, A; Schipper, J-D

2008-01-01

Latches based on the Dual Interlocked storage Cell or DICE are very tolerant to Single Event Upsets (SEU). However, for highly scaled processes where the sizes continue to decrease, the data in this latch can be corrupted by an SEU due to charge sharing between adjacent nodes. Some layout considerations are used to improve the tolerance of the DICE latches to SEU and especially the influence of sensitive nodes separation is tested for DICE latches designed with a 130 nm process.

Predictions of integrated circuit serviceability in space radiation fields

Energy Technology Data Exchange (ETDEWEB)

Khamidullina, N.M.; Kuznetsov, N.V.; Pichkhadze, K.M.; Popov, V.D

1999-10-01

The present paper suggests an approach to estimating and predicting the serviceability of on-board electronic equipment. It is based on the postulates of the reliability theory and accounts for total-dose and single-event radiation effects as well as other exterior destabilizing factors. The methods of determination of failure and upset rates for CMOS devices are considered. The probability of non-failure operation of a two CMOS RAM is calculated along the whole trajectory of the 'Solar Probe' spacecraft.

NI Based System for Seu Testing of Memory Chips for Avionics

Directory of Open Access Journals (Sweden)

Boruzdina Anna

2016-01-01

Full Text Available This paper presents the results of implementation of National Instrument based system for Single Event Upset testing of memory chips into neutron generator experimental facility, which used for SEU tests for avionics purposes. Basic SEU testing algorithm with error correction and constant errors detection is presented. The issues of radiation shielding of NI based system are discussed and solved. The examples of experimental results show the applicability of the presented system for SEU memory testing under neutrons influence.

Design Tools for Reconfigurable Hardware in Orbit (RHinO)

Science.gov (United States)

French, Mathew; Graham, Paul; Wirthlin, Michael; Larchev, Gregory; Bellows, Peter; Schott, Brian

2004-01-01

The Reconfigurable Hardware in Orbit (RHinO) project is focused on creating a set of design tools that facilitate and automate design techniques for reconfigurable computing in space, using SRAM-based field-programmable-gate-array (FPGA) technology. These tools leverage an established FPGA design environment and focus primarily on space effects mitigation and power optimization. The project is creating software to automatically test and evaluate the single-event-upsets (SEUs) sensitivities of an FPGA design and insert mitigation techniques. Extensions into the tool suite will also allow evolvable algorithm techniques to reconfigure around single-event-latchup (SEL) events. In the power domain, tools are being created for dynamic power visualiization and optimization. Thus, this technology seeks to enable the use of Reconfigurable Hardware in Orbit, via an integrated design tool-suite aiming to reduce risk, cost, and design time of multimission reconfigurable space processors using SRAM-based FPGAs.

Radiation Hardened NULL Convention Logic Asynchronous Circuit Design

Directory of Open Access Journals (Sweden)

Liang Zhou

2015-10-01

Full Text Available This paper proposes a radiation hardened NULL Convention Logic (NCL architecture that can recover from a single event latchup (SEL or single event upset (SEU fault without deadlock or any data loss. The proposed architecture is analytically proved to be SEL resistant, and by extension, proved to be SEU resistant. The SEL/SEU resistant version of a 3-stage full-word pipelined NCL 4 × 4 unsigned multiplier was implemented using the IBM cmrf8sf 130 nm 1.2 V process at the transistor level and simulated exhaustively with SEL fault injection to validate the proposed architectures. Compared with the original version, the SEL/SEU resilient version has 1.31× speed overhead, 2.74× area overhead, and 2.79× energy per operation overhead.

Single charging events on colloidal particles in a nonpolar liquid with surfactant

Science.gov (United States)

Schreuer, Caspar; Vandewiele, Stijn; Brans, Toon; Strubbe, Filip; Neyts, Kristiaan; Beunis, Filip

2018-01-01

Electrical charging of colloidal particles in nonpolar liquids due to surfactant additives is investigated intensively, motivated by its importance in a variety of applications. Most methods rely on average electrophoretic mobility measurements of many particles, which provide only indirect information on the charging mechanism. In the present work, we present a method that allows us to obtain direct information on the charging mechanism, by measuring the charge fluctuations on individual particles with a precision higher than the elementary charge using optical trapping electrophoresis. We demonstrate the capabilities of the method by studying the influence of added surfactant OLOA 11000 on the charging of single colloidal PMMA particles in dodecane. The particle charge and the frequency of charging events are investigated both below and above the critical micelle concentration (CMC) and with or without applying a DC offset voltage. It is found that at least two separate charging mechanisms are present below the critical micelle concentration. One mechanism is a process where the particle is stripped from negatively charged ionic molecules. An increase in the charging frequency with increased surfactant concentration suggests a second mechanism that involves single surfactant molecules. Above the CMC, neutral inverse micelles can also be involved in the charging process.

New insight into the parasitic bipolar amplification effect in single event transient production

International Nuclear Information System (INIS)

Chen Jian-Jun; Chen Shu-Ming; Liang Bin; Deng Ke-Feng

2012-01-01

In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P + -well layer and can be removed by a buried SO 2 layer. (condensed matter: structural, mechanical, and thermal properties)

Effects of drain-wall in mitigating N-hit single event transient via 45 nm CMOS process

International Nuclear Information System (INIS)

Xu, X Y; Tang, M H; Xiao, Y G; Yan, S A; Zhang, W L; Li, Z; Xiong, Y; Zhao, W; Guo, H X

2015-01-01

A three-dimensional (3D) technology computer-aided design (TCAD) simulation in a novel layout technique for N-hit single event transient (SET) mitigation based on drain-wall layout technique is proposed. Numerical simulations of both single-device and mixed-mode show that the proposed layout technique designed with 45 nm CMOS process can efficiently reduce not only charge collection but also SET pulse widths (W SET ). What is more, simulations show that impacts caused by part of ion-incidents can be shielded with this novel layout technique. When compared with conventional layout technique and guard drain layout technique, we find that the proposed novel layout technique can provide the best benefit of SET mitigation with a small sacrifice in effective area. (paper)

Triggering Mechanism for Neutron Induced Single-Event Burnout in Power Devices

Science.gov (United States)

Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori

2013-04-01

Cosmic ray neutrons can trigger catastrophic failures in power devices. It has been reported that parasitic transistor action causes single-event burnout (SEB) in power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). However, power diodes do not have an inherent parasitic transistor. In this paper, we describe the mechanism triggering SEB in power diodes for the first time using transient device simulation. Initially, generated electron-hole pairs created by incident recoil ions generate transient current, which increases the electron density in the vicinity of the n-/n+ boundary. The space charge effect of the carriers leads to an increase in the strength of the electric field at the n-/n+ boundary. Finally, the onset of impact ionization at the n-/n+ boundary can trigger SEB. Furthermore, this failure is closely related to diode secondary breakdown. It was clarified that the impact ionization at the n-/n+ boundary is a key point of the mechanism triggering SEB in power devices.

Number distribution of leakage neutrons for single neutron emission event and one source emission event in multiplying medium for two variables - a GEANT4 study

International Nuclear Information System (INIS)

Roy, Arup Singha; Raman, Anand; Chaudhury, Probal; Thomas, Renju G.

2018-01-01

A quantitative knowledge about the neutron multiplying character of a neutron multiplying medium such as High enriched Uranium (HEU), Weapon Graded plutonium (WGPu) and similar special nuclear materials is essential for improving the probability of detection of these materials to check against illicit trafficking. The objective of this study is to gain a deeper insight in to the neutron and gamma multiplication behaviour of these materials. The leakage number distribution of neutron and gamma initiated by a source emission event (Spontaneous Fission) as well as single neutron emission event has been obtained in the course of this study. The computations for this study were carried out through GEANT4 simulation and also with the help of FREYA incorporated into it. This helped to carry out a detailed analysis of each history more realistically and obtain more reliable results

Effects of DNA double-strand and single-strand breaks on intrachromosomal recombination events in cell-cycle-arrested yeast cells

International Nuclear Information System (INIS)

Galli, A.; Schiestl, R.H.

1998-01-01

Intrachromosomal recombination between repeated elements can result in deletion (DEL recombination) events. We investigated the inducibility of such intrachromosomal recombination events at different stages of the cell cycle and the nature of the primary DNA lesions capable of initiating these events. Two genetic systems were constructed in Saccharomyces cerevisiae that select for DEL recombination events between duplicated alleles of CDC28 and TUB2. We determined effects of double-strand breaks (DSBs) and single-strand breaks (SSBs) between the duplicated alleles on DEL recombination when induced in dividing cells or cells arrested in G1 or G2. Site-specific DSBs and SSBs were produced by overexpression of the I-Sce I endonuclease and the gene II protein (gIIp), respectively. I-Sce I-induced DSBs caused an increase in DEL recombination frequencies in both dividing and cell-cycle-arrested cells, indicating that G1- and G2-arrested cells are capable of completing DSB repair. In contrast, gIIp-induced SSBs caused an increase in DEL recombination frequency only in dividing cells. To further examine these phenomena we used both γ-irradiation, inducing DSBs as its most relevant lesion, and UV, inducing other forms of DNA damage. UV irradiation did not increase DEL recombination frequencies in G1 or G2, whereas γ-rays increased DEL recombination frequencies in both phases. Both forms of radiation, however, induced DEL recombination in dividing cells. The results suggest that DSBsbut not SSBs induce DEL recombination, probably via the single-strand annealing pathway. Further, DSBs in dividing cells may result from the replication of a UV or SSB-damaged template. Alternatively, UV induced events may occur by replication slippage after DNA polymerase pausing in front of the damage. (author)

Search for new phenomena using single photon events in the DELPHI detector at LEP

CERN Document Server

Abreu, P; Adye, T; Agasi, E; Ajinenko, I; Aleksan, Roy; Alekseev, G D; Alemany, R; Allport, P P; Almehed, S; Amaldi, Ugo; Amato, S; Andreazza, A; Andrieux, M L; Antilogus, P; Apel, W D; Arnoud, Y; Åsman, B; Augustin, J E; Augustinus, A; Baillon, Paul; Bambade, P; Barão, F; Barate, R; Barbi, M S; Barbiellini, Guido; Bardin, Dimitri Yuri; Baroncelli, A; Bärring, O; Barrio, J A; Bartl, Walter; Bates, M J; Battaglia, Marco; Baubillier, M; Baudot, J; Becks, K H; Begalli, M; Beillière, P; Belokopytov, Yu A; Belous, K S; Benvenuti, Alberto C; Berggren, M; Bertrand, D; Bianchi, F; Bigi, M; Bilenky, S M; Billoir, P; Bloch, D; Blume, M; Blyth, S; Bolognese, T; Bonesini, M; Bonivento, W; Booth, P S L; Borisov, G; Bosio, C; Bosworth, S; Botner, O; Boudinov, E; Bouquet, B; Bourdarios, C; Bowcock, T J V; Bozzo, M; Branchini, P; Brand, K D; Brenke, T; Brenner, R A; Bricman, C; Brillault, L; Brown, R C A; Brückman, P; Brunet, J M; Bugge, L; Buran, T; Burgsmüller, T; Buschmann, P; Buys, A; Cabrera, S; Caccia, M; Calvi, M; Camacho-Rozas, A J; Camporesi, T; Canale, V; Canepa, M; Cankocak, K; Cao, F; Carena, F; Carroll, L; Caso, Carlo; Castillo-Gimenez, M V; Cattai, A; Cavallo, F R; Cerrito, L; Chabaud, V; Charpentier, P; Chaussard, L; Chauveau, J; Checchia, P; Chelkov, G A; Chen, M; Chierici, R; Chliapnikov, P V; Chochula, P; Chorowicz, V; Cindro, V; Collins, P; Contreras, J L; Contri, R; Cortina, E; Cosme, G; Cossutti, F; Crawley, H B; Crennell, D J; Crosetti, G; Cuevas-Maestro, J; Czellar, S; Dahl-Jensen, Erik; Dahm, J; D'Almagne, B; Dam, M; Damgaard, G; Dauncey, P D; Davenport, Martyn; Da Silva, W; Defoix, C; Deghorain, A; Della Ricca, G; Delpierre, P A; Demaria, N; De Angelis, A; de Boer, Wim; De Brabandere, S; De Clercq, C; La Vaissière, C de; De Lotto, B; De Min, A; De Paula, L S; De Saint-Jean, C; Dijkstra, H; Di Ciaccio, Lucia; Djama, F; Dolbeau, J; Dönszelmann, M; Doroba, K; Dracos, M; Drees, J; Drees, K A; Dris, M; Dufour, Y; Edsall, D M; Ehret, R; Eigen, G; Ekelöf, T J C; Ekspong, Gösta; Elsing, M; Engel, J P; Ershaidat, N; Erzen, B; Espirito-Santo, M C; Falk, E; Fassouliotis, D; Feindt, Michael; Fenyuk, A; Ferrer, A; Filippas-Tassos, A; Firestone, A; Fischer, P A; Föth, H; Fokitis, E; Fontanelli, F; Formenti, F; Franek, B J; Frenkiel, P; Fries, D E C; Frodesen, A G; Frühwirth, R; Fulda-Quenzer, F; Fuster, J A; Galloni, A; Gamba, D; Gandelman, M; García, C; García, J; Gaspar, C; Gasparini, U; Gavillet, P; Gazis, E N; Gelé, D; Gerber, J P; Gerdyukov, L N; Gibbs, M; Gokieli, R; Golob, B; Gopal, Gian P; Gorn, L; Górski, M; Guz, Yu; Gracco, Valerio; Graziani, E; Grosdidier, G; Grzelak, K; Gumenyuk, S A; Gunnarsson, P; Günther, M; Guy, J; Hahn, F; Hahn, S; Hajduk, Z; Hallgren, A; Hamacher, K; Hao, W; Harris, F J; Hedberg, V; Hernández, J J; Herquet, P; Herr, H; Hessing, T L; Higón, E; Hilke, Hans Jürgen; Hill, T S; Holmgren, S O; Holt, P J; Holthuizen, D J; Hoorelbeke, S; Houlden, M A; Huet, K; Hultqvist, K; Jackson, J N; Jacobsson, R; Jalocha, P; Janik, R; Jarlskog, C; Jarlskog, G; Jarry, P; Jean-Marie, B; Johansson, E K; Jönsson, L B; Jönsson, P E; Joram, Christian; Juillot, P; Kaiser, M; Kapusta, F; Karafasoulis, K; Karlsson, M; Karvelas, E; Katsanevas, S; Katsoufis, E C; Keränen, R; Khokhlov, Yu A; Khomenko, B A; Khovanskii, N N; King, B J; Kjaer, N J; Klein, H; Klovning, A; Kluit, P M; Köne, B; Kokkinias, P; Koratzinos, M; Korcyl, K; Kourkoumelis, C; Kuznetsov, O; Kramer, P H; Krammer, Manfred; Kreuter, C; Kronkvist, I J; Krumshtein, Z; Krupinski, W; Kubinec, P; Kucewicz, W; Kurvinen, K L; Lacasta, C; Laktineh, I; Lamblot, S; Lamsa, J; Lanceri, L; Lane, D W; Langefeld, P; Last, I; Laugier, J P; Lauhakangas, R; Leder, Gerhard; Ledroit, F; Lefébure, V; Legan, C K; Leitner, R; Lemoigne, Y; Lemonne, J; Lenzen, Georg; Lepeltier, V; Lesiak, T; Liko, D; Lindner, R; Lipniacka, A; Lippi, I; Lörstad, B; Lokajícek, M; Loken, J G; López, J M; Loukas, D; Lutz, P; Lyons, L; MacNaughton, J N; Maehlum, G; Maio, A; Malychev, V; Mandl, F; Marco, J; Marco, R P; Maréchal, B; Margoni, M; Marin, J C; Mariotti, C; Markou, A; Maron, T; Martínez-Rivero, C; Martínez-Vidal, F; Martí i García, S; Matorras, F; Matteuzzi, C; Matthiae, Giorgio; Mazzucato, M; McCubbin, M L; McKay, R; McNulty, R; Medbo, J; Merk, M; Meroni, C; Meyer, S; Meyer, W T; Michelotto, M; Migliore, E; Mirabito, L; Mitaroff, Winfried A; Mjörnmark, U; Moa, T; Møller, R; Mönig, K; Monge, M R; Morettini, P; Müller, H; Mundim, L M; Murray, W J; Muryn, B; Myatt, Gerald; Naraghi, F; Navarria, Francesco Luigi; Navas, S; Nawrocki, K; Negri, P; Némécek, S; Neumann, W; Neumeister, N; Nicolaidou, R; Nielsen, B S; Nieuwenhuizen, M; Nikolaenko, V; Niss, P; Nomerotski, A; Normand, Ainsley; Oberschulte-Beckmann, W; Obraztsov, V F; Olshevskii, A G; Onofre, A; Orava, Risto; Österberg, K; Ouraou, A; Paganini, P; Paganoni, M; Pagès, P; Palka, H; Papadopoulou, T D; Papageorgiou, K; Pape, L; Parkes, C; Parodi, F; Passeri, A; Pegoraro, M; Peralta, L; Pernegger, H; Pernicka, Manfred; Perrotta, A; Petridou, C; Petrolini, A; Petrovykh, M; Phillips, H T; Piana, G; Pierre, F; Pimenta, M; Pindo, M; Plaszczynski, S; Podobrin, O; Pol, M E; Polok, G; Poropat, P; Pozdnyakov, V; Prest, M; Privitera, P; Pukhaeva, N; Pullia, Antonio; Radojicic, D; Ragazzi, S; Rahmani, H; Rames, J; Ratoff, P N; Read, A L; Reale, M; Rebecchi, P; Redaelli, N G; Regler, Meinhard; Reid, D; Renton, P B; Resvanis, L K; Richard, F; Richardson, J; Rídky, J; Rinaudo, G; Ripp, I; Romero, A; Roncagliolo, I; Ronchese, P; Roos, L; Rosenberg, E I; Rosso, E; Roudeau, Patrick; Rovelli, T; Rückstuhl, W; Ruhlmann-Kleider, V; Ruiz, A; Rybicki, K; Saarikko, H; Sacquin, Yu; Sadovskii, A; Sajot, G; Salt, J; Sánchez, J; Sannino, M; Schimmelpfennig, M; Schneider, H; Schwickerath, U; Schyns, M A E; Sciolla, G; Scuri, F; Seager, P; Sedykh, Yu; Segar, A M; Seitz, A; Sekulin, R L; Shellard, R C; Siccama, I; Siegrist, P; Simonetti, S; Simonetto, F; Sissakian, A N; Sitár, B; Skaali, T B; Smadja, G; Smirnov, N; Smirnova, O G; Smith, G R; Solovyanov, O; Sosnowski, R; Souza-Santos, D; Spassoff, Tz; Spiriti, E; Sponholz, P; Squarcia, S; Stanescu, C; Stapnes, Steinar; Stavitski, I; Stichelbaut, F; Stocchi, A; Strauss, J; Strub, R; Stugu, B; Szczekowski, M; Szeptycka, M; Tabarelli de Fatis, T; Tavernet, J P; Chikilev, O G; Tilquin, A; Timmermans, J; Tkatchev, L G; Todorov, T; Toet, D Z; Tomaradze, A G; Tomé, B; Tonazzo, A; Tortora, L; Tranströmer, G; Treille, D; Trischuk, W; Tristram, G; Trombini, A; Troncon, C; Tsirou, A L; Turluer, M L; Tyapkin, I A; Tyndel, M; Tzamarias, S; Überschär, B; Ullaland, O; Uvarov, V; Valenti, G; Vallazza, E; Van der Velde, C; van Apeldoorn, G W; van Dam, P; Van Doninck, W K; Van Eldik, J; Vassilopoulos, N; Vegni, G; Ventura, L; Venus, W A; Verbeure, F; Verlato, M; Vertogradov, L S; Vilanova, D; Vincent, P; Vitale, L; Vlasov, E; Vodopyanov, A S; Vrba, V; Wahlen, H; Walck, C; Weierstall, M; Weilhammer, Peter; Weiser, C; Wetherell, Alan M; Wicke, D; Wickens, J H; Wielers, M; Wilkinson, G R; Williams, W S C; Winter, M; Witek, M; Woschnagg, K; Yip, K; Yushchenko, O P; Zach, F; Zaitsev, A; Zalewska-Bak, A; Zalewski, Piotr; Zavrtanik, D; Zevgolatakos, E; Zimin, N I; Zito, M; Zontar, D; Zuberi, R; Zucchelli, G C; Zumerle, G; Charpentier, Ph; Gavillet, Ph

1997-01-01

Data are presented on the reaction \\epem~\\into~\\gamma + no other detected particle at center-of-mass energies, \\sqs = 89.48 GeV, 91.26 GeV and 93.08 GeV. The cross section for this reaction is related directly to the number of light neutrino generations which couple to the \\zz boson, and to several other phenomena such as excited neutrinos, the production of an invisible `X' particle, a possible magnetic moment of the tau neutrino, and neutral monojets. Based on the observed number of single photon events, the number of light neutrinos which couple to the \\zz is measured to be N_\

Classification of Single-Trial Auditory Events Using Dry-Wireless EEG During Real and Motion Simulated Flight

Directory of Open Access Journals (Sweden)

Daniel eCallan

2015-02-01

Full Text Available Application of neuro-augmentation technology based on dry-wireless EEG may be considerably beneficial for aviation and space operations because of the inherent dangers involved. In this study we evaluate classification performance of perceptual events using a dry-wireless EEG system during motion platform based flight simulation and actual flight in an open cockpit biplane to determine if the system can be used in the presence of considerable environmental and physiological artifacts. A passive task involving 200 random auditory presentations of a chirp sound was used for evaluation. The advantage of this auditory task is that it does not interfere with the perceptual motor processes involved with piloting the plane. Classification was based on identifying the presentation of a chirp sound versus silent periods. Evaluation of Independent component analysis and Kalman filtering to enhance classification performance by extracting brain activity related to the auditory event from other non-task related brain activity and artifacts was assessed. The results of permutation testing revealed that single trial classification of presence or absence of an auditory event was significantly above chance for all conditions on a novel test set. The best performance could be achieved with both ICA and Kalman filtering relative to no processing: Platform Off (83.4% vs 78.3%, Platform On (73.1% vs 71.6%, Biplane Engine Off (81.1% vs 77.4%, and Biplane Engine On (79.2% vs 66.1%. This experiment demonstrates that dry-wireless EEG can be used in environments with considerable vibration, wind, acoustic noise, and physiological artifacts and achieve good single trial classification performance that is necessary for future successful application of neuro-augmentation technology based on brain-machine interfaces.

CL-imaging and ion microprobe dating of single zircons from a high-grade rock from the Central Zone, Limpopo Belt, South Africa: Evidence for a single metamorphic event at ˜2.0 Ga

Science.gov (United States)

Mouri, H.; Brandl, G.; Whitehouse, M.; de Waal, S.; Guiraud, M.

2008-02-01

The combination of ion microprobe dating and cathodoluminescence (CL) imaging of zircons from a high-grade rock from the Central Zone of the Limpopo Belt were used to constrain the age of metamorphic events in the area. Zircon grains extracted from an orthopyroxene-gedrite-bearing granulite were prepared for single crystal CL-imaging and ion microprobe dating. The grains display complex zoning when using SEM-based CL-imaging. A common feature in most grains is the presence of a distinct core with a broken oscillatory zoned structure, which clearly appears to be the remnant of an original grain of igneous origin. This core is overgrown by an unzoned thin rim measuring about 10-30 μm in diameter, which is considered as new zircon growth during a single metamorphic event. Selected domains of the zircon grains were analysed for U, Pb and Th isotopic composition using a CAMECA IMS 1270 ion microprobe (Nordsim facility). Most of the grains define a near-concordant cluster with some evidence of Pb loss. The most concordant ages of the cores yielded a weighted mean 207Pb/ 206Pb age of 2689 ± 15 (2 σ) Ma, interpreted as the age of the protolith of an igneous origin. The unzoned overgrowths of the zircon grains yielded a considerably younger weighted mean 207Pb/ 206Pb age of ˜2006.5 ± 8.0 Ma (2 σ), and these data are interpreted to reflect closely the age of the ubiquitous high-grade metamorphic event in the Central Zone. This study shows clearly, based on both the internal structure of the zircons and the data obtained by ion microprobe dating, that only a single metamorphic event is recorded by the studied 2.69 Ga old rocks, and we found no evidence of an earlier metamorphic event at ˜2.5 Ga as postulated earlier by some workers.

Joint Models of Longitudinal and Time-to-Event Data with More Than One Event Time Outcome: A Review.

Science.gov (United States)

Hickey, Graeme L; Philipson, Pete; Jorgensen, Andrea; Kolamunnage-Dona, Ruwanthi

2018-01-31

Methodological development and clinical application of joint models of longitudinal and time-to-event outcomes have grown substantially over the past two decades. However, much of this research has concentrated on a single longitudinal outcome and a single event time outcome. In clinical and public health research, patients who are followed up over time may often experience multiple, recurrent, or a succession of clinical events. Models that utilise such multivariate event time outcomes are quite valuable in clinical decision-making. We comprehensively review the literature for implementation of joint models involving more than a single event time per subject. We consider the distributional and modelling assumptions, including the association structure, estimation approaches, software implementations, and clinical applications. Research into this area is proving highly promising, but to-date remains in its infancy.

Event-By-Event Initial Conditions for Heavy Ion Collisions

International Nuclear Information System (INIS)

Rose, S; Fries, R J

2017-01-01

The early time dynamics of heavy ion collisions can be described by classical fields in an approximation of Quantum ChromoDynamics (QCD) called Color Glass Condensate (CGC). Monte-Carlo sampling of the color charge for the incoming nuclei are used to calculate their classical gluon fields. Following the recent work by Chen et al. we calculate the energy momentum tensor of those fields at early times in the collision event-by-event. This can then be used for subsequent hydrodynamic evolution of the single events. (paper)

Event-By-Event Initial Conditions for Heavy Ion Collisions

Science.gov (United States)

Rose, S.; Fries, R. J.

2017-04-01

The early time dynamics of heavy ion collisions can be described by classical fields in an approximation of Quantum ChromoDynamics (QCD) called Color Glass Condensate (CGC). Monte-Carlo sampling of the color charge for the incoming nuclei are used to calculate their classical gluon fields. Following the recent work by Chen et al. we calculate the energy momentum tensor of those fields at early times in the collision event-by-event. This can then be used for subsequent hydrodynamic evolution of the single events.

[Incidence rate of adverse reaction/event by Qingkailing injection: a Meta-analysis of single rate].

Science.gov (United States)

Ai, Chun-ling; Xie, Yan-ming; Li, Ming-quan; Wang, Lian-xin; Liao, Xing

2015-12-01

To systematically review the incidence rate of adverse drug reaction/event by Qingkailing injection. Such databases as the PubMed, EMbase, the Cochrane library, CNKI, VIP WanFang data and CBM were searched by computer from foundation to July 30, 2015. Two reviewers independently screened literature according to the inclusion and exclusion criteria, extracted data and cross check data. Then, Meta-analysis was performed by using the R 3.2.0 software, subgroup sensitivity analysis was performed based on age, mode of medicine, observation time and research quality. Sixty-three studies involving 9,793 patients with Qingkailing injection were included, 367 cases of adverse reactions/events were reported in total. The incidence rate of adverse reaction in skin and mucosa group was 2% [95% CI (0.02; 0.03)]; the digestive system adverse reaction was 6% [95% CI(0.05; 0.07); the injection site adverse reaction was 4% [95% CI (0.02; 0.07)]. In the digestive system as the main types of adverse reactions/events, incidence of children and adults were 4.6% [0.021 1; 0.097 7] and 6.9% [0.053 5; 0.089 8], respectively. Adverse reactions to skin and mucous membrane damage as the main performance/event type, the observation time > 7 days and ≤ 7 days incidence of 3% [0.012 9; 0.068 3] and 1.9% [0.007 8; 0.046 1], respectively. Subgroup analysis showed that different types of adverse reactions, combination in the incidence of adverse reactions/events were higher than that of single drug, the difference was statistically significant (P reactions occur, and clinical rational drug use, such as combination, age and other fators, and the influence factors vary in different populations. Therefore, clinical doctors for children and the elderly use special care was required for a clear and open spirit injection, the implementation of individualized medication.

Single photon and multiphoton events with missing energy in $e^{+} e^{-}$ collisions at LEP

CERN Document Server

Achard, P; Aguilar-Benítez, M; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alviggi, M G; Anderhub, H; Andreev, V P; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Bajo, A; Baksay, G; Baksay, L; Baldew, S V; Banerjee, S; Banerjee, Sw; Barczyk, A; Barillère, R; Bartalini, P; Basile, M; Batalova, N; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Bellucci, L; Berbeco, R; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Biasini, M; Biglietti, M; Biland, A; Blaising, J J; Blyth, S C; Bobbink, Gerjan J; Böhm, A; Boldizsar, L; Borgia, B; Bottai, S; Bourilkov, D; Bourquin, Maurice; Braccini, S; Branson, J G; Brochu, F; Burger, J D; Burger, W J; Cai, X D; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A M; Casaus, J; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada, M; Chamizo-Llatas, M; Chang, Y H; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chiefari, G; Cifarelli, Luisa; Cindolo, F; Clare, I; Clare, R; Coignet, G; Colino, N; Costantini, S; de la Cruz, B; Cucciarelli, S; van Dalen, J A; De Asmundis, R; Déglon, P L; Debreczeni, J; Degré, A; Dehmelt, K; Deiters, K; Della Volpe, D; Delmeire, E; Denes, P; De Notaristefani, F; De Salvo, A; Diemoz, M; Dierckxsens, M; Dionisi, C; Dittmar, M; Doria, A; Dova, M T; Duchesneau, D; Duda, M; Echenard, B; Eline, A; El-Hage, A; El-Mamouni, H; Engler, A; Eppling, F J; Extermann, P; Falagán, M A; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, M; Ferguson, T; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, F; Fisher, P H; Fisher, W; Fisk, I; Forconi, G; Freudenreich, Klaus; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gataullin, M; Gentile, S; Giagu, S; Gong, Z F; Grenier, G; Grimm, O; Grünewald, M W; Guida, M; van Gulik, R; Gupta, V K; Gurtu, A; Gutay, L J; Haas, D; Hatzifotiadou, D; Hebbeker, T; Hervé, A; Hirschfelder, J; Hofer, H; Hohlmann, M; Holzner, G; Hou, S R; Hu, Y; Jin, B N; Jones, L W; de Jong, P; Josa-Mutuberria, I; Käfer, D; Kaur, M; Kienzle-Focacci, M N; Kim, J K; Kirkby, Jasper; Kittel, E W; Klimentov, A; König, A C; Kopal, M; Koutsenko, V F; Kräber, M H; Krämer, R W; Krüger, A; Kunin, A; Ladrón de Guevara, P; Laktineh, I; Landi, G; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Le Goff, J M; Leiste, R; Levtchenko, M; Levchenko, P M; Li, C; Likhoded, S; Lin, C H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lü, Y S; Luci, C; Luminari, L; Lustermann, W; Ma Wen Gan; Malgeri, L; Malinin, A; Maña, C; Mans, J; Martin, J P; Marzano, F; Mazumdar, K; McNeil, R R; Mele, S; Merola, L; Meschini, M; Metzger, W J; Mihul, A; Milcent, H; Mirabelli, G; Mnich, J; Mohanty, G B; Muanza, G S; Muijs, A J M; Musicar, B; Musy, M; Nagy, S; Natale, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Nisati, A; Novák, T; Nowak, H; Ofierzynski, R A; Organtini, G; Pal, I; Palomares, C; Paolucci, P; Paramatti, R; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Pedace, M; Pensotti, S; Perret-Gallix, D; Petersen, B; Piccolo, D; Pierella, F; Pioppi, M; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Pothier, J; Prokofev, D; Prokofiev, D O; Quartieri, J; Rahal-Callot, G; Rahaman, M A; Raics, P; Raja, N; Ramelli, R; Rancoita, P G; Ranieri, R; Raspereza, A V; Razis, P A; Ren, D; Rescigno, M; Reucroft, S; Riemann, S; Riles, K; Roe, B P; Romero, L; Rosca, A; Rosenbleck, C; Rosier-Lees, S; Roth, S; Rubio, J A; Ruggiero, G; Rykaczewski, H; Sakharov, A; Saremi, S; Sarkar, S; Salicio, J; Sánchez, E; Schäfer, C; Shchegelskii, V; Schopper, Herwig Franz; Schotanus, D J; Sciacca, C; Servoli, L; Shevchenko, S; Shivarov, N; Shoutko, V; Shumilov, E; Shvorob, A V; Son, D; Souga, C; Spillantini, P; Steuer, M; Stickland, D P; Stoyanov, B; Strässner, A; Sudhakar, K; Sultanov, G G; Sun, L Z; Sushkov, S; Suter, H; Swain, J D; Szillási, Z; Tang, X W; Tarjan, P; Tauscher, Ludwig; Taylor, L; Tellili, B; Teyssier, D; Timmermans, C; Ting, Samuel C C; Ting, S M; Tonwar, S C; Tóth, J; Tully, C; Tung, K L; Ulbricht, J; Valente, E; Van de Walle, R T; Vásquez, R; Veszpremi, V; Vesztergombi, G; Vetlitskii, I; Vicinanza, D; Viertel, Gert M; Villa, S; Vivargent, M; Vlachos, S; Vodopyanov, I; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Wadhwa, M; Wang, Q; Wang, X L; Wang, Z M; Weber, M; Wienemann, P; Wilkens, H; Wynhoff, S; Xia, L; Xu, Z Z; Yamamoto, J; Yang, B Z; Yang, C G; Yang, H J; Yang, M; Yeh, S C; Zalite, A; Zalite, Yu; Zhang, Z P; Zhao, J; Zhu, G Y; Zhu, R Y; Zhuang, H L; Zichichi, A; Zimmermann, B; Zöller, M

2004-01-01

Single- and multi-photon events with missing energy are selected in 619/pb of data collected by the L3 detector at LEP at centre-of-mass energies between 189GeV and 209GeV. The cross sections of the process e^+e^- -> nu nu gamma (gamma) are found to be in agreement with the Standard Model expectations, and the number of light neutrino species is determined, including lower energy data, to be N_nu = 2.98 +/- 0.05 +/- 0.04. Selection results are also given in the form of tables which can be used to test future models involving single- and multi-photon signatures at LEP. These final states are also predicted by models with large extra dimensions and by several supersymmetric models. No evidence for such models is found. Among others, lower limits between 1.5TeV and 0.65TeV are set, at 95% confidence level, on the new scale of gravity for the number of extra dimensions between 2 and 8.

A software solution to estimate the SEU-induced soft error rate for systems implemented on SRAM-based FPGAs

International Nuclear Information System (INIS)

Wang Zhongming; Lu Min; Yao Zhibin; Guo Hongxia

2011-01-01

SRAM-based FPGAs are very susceptible to radiation-induced Single-Event Upsets (SEUs) in space applications. The failure mechanism in FPGA's configuration memory differs from those in traditional memory device. As a result, there is a growing demand for methodologies which could quantitatively evaluate the impact of this effect. Fault injection appears to meet such requirement. In this paper, we propose a new methodology to analyze the soft errors in SRAM-based FPGAs. This method is based on in depth understanding of the device architecture and failure mechanisms induced by configuration upsets. The developed programs read in the placed and routed netlist, search for critical logic nodes and paths that may destroy the circuit topological structure, and then query a database storing the decoded relationship of the configurable resources and corresponding control bit to get the sensitive bits. Accelerator irradiation test and fault injection experiments were carried out to validate this approach. (semiconductor integrated circuits)

Single-event multilevel surgery for children with cerebral palsy: a systematic review.

Science.gov (United States)

McGinley, Jennifer L; Dobson, Fiona; Ganeshalingam, Rekha; Shore, Benjamin J; Rutz, Erich; Graham, H Kerr

2012-02-01

To conduct a systematic review of single-event multilevel surgery (SEMLS) for children with cerebral palsy, with the aim of evaluating the quality of the evidence and developing recommendations for future research. The systematic review was conducted using standard search and extraction methods in Medline, EMBASE, CINAHL, and Cochrane electronic databases. For the purposes of this review, SEMLS was defined as two or more soft-tissue or bony surgical procedures at two or more anatomical levels during one operative procedure, requiring only one hospital admission and one period of rehabilitation. Studies were included if: (1) the primary focus was to examine the effect of SEMLS in children with cerebral palsy; (2) the results focused on multiple anatomic levels and reported findings of one or more World Health Organization International Classification of Functioning, Disability and Health (ICF) domains. Studies that focused on a single intervention or level, or on the utility of a specific outcome measure were excluded. Study quality was appraised with the Methodological Index for Non-Randomized Studies (MINORS) and the Oxford Centre for Evidence-Based Medicine scale. The review also examined the reporting of surgery, adverse events, and rehabilitation. Thirty-one studies fulfilled the criteria for inclusion, over the period 1985 to October 2010. The MINORS score for these studies varied from 4 to 19, with marked variation in the quality of reporting. Study quality has improved over recent years. Valid measures of gait and function have been introduced and several of the most recent studies have addressed multiple dimensions of the ICF. A statistical synthesis of the outcome data was not conducted, although a trend towards favourable outcomes in gait was evident. Caution is advised with interpretation owing to the variable study quality. Uncontrolled studies may have resulted in an overestimation of treatment efficacy. The design and reporting of studies of SEMLS are

Chrysler Upset Protrusion Joining Techniques for Joining Dissimilar Metals

Energy Technology Data Exchange (ETDEWEB)

Logan, Stephen [FCA US LLC, Auburn Hills, MI (United States)

2017-09-28

The project goal was to develop and demonstrate a robust, cost effective, and versatile joining technique, known as Upset Protrusion Joining (UPJ), for joining challenging dissimilar metal com-binations, especially those where one of the metals is a die cast magnesium (Mg) component. Since two of the key obstacles preventing more widespread use of light metals (especially in high volume automotive applications) are 1) a lack of robust joining techniques and 2) susceptibility to galvanic corrosion, and since the majority of the joint combinations evaluated in this project include die cast Mg (the lightest structural metal) as one of the two materials being joined, and since die casting is the most common and cost effective process for producing Mg components, then successful project completion provides a key enabler to high volume application of lightweight materials, thus potentially leading to reduced costs, and encouraging implementation of lightweight multi-material vehicles for significant reductions in energy consumption and reduced greenhouse gas emissions. Eco-nomic benefits to end-use consumers are achieved primarily via the reduction in fuel consumption. Unlike currently available commercial processes, the UPJ process relies on a very robust mechanical joint rather than intermetallic bonding, so the more cathodic material can be coated prior to joining, thus creating a robust isolation against galvanic attack on the more anodic material. Additionally, since the UPJ protrusion is going through a hole that can be pre-drilled or pre-punched prior to coating, the UPJ process is less likely to damage the coating when the joint is being made. Further-more, since there is no additional cathodic material (such as a steel fastener) used to create the joint, there is no joining induced galvanic activity beyond that of the two parent materials. In accordance with its originally proposed plan, this project has successfully developed process variants of UPJ to enable

Monte Carlo study for the dynamical fluctuations inside a single jet in 2-jet events

International Nuclear Information System (INIS)

Zhang Kunshi; Liu Lianshou; Yin Jianwu; Chen Gang; Liu Chao

2002-01-01

The dynamical fluctuations inside a single jet in the 2-jet events produced in e + e - collisions at 91.2 GeV have been studied using Monte Carlo method. The results show that, the anisotropy of dynamical fluctuations inside a single jet changes remarkably with the variation of the cut parameter y cut . A transition point (γ p t = γ ψ ≠γ y ) exists, where the dynamical fluctuations are anisotropic in the longitudinal-transverse plan and isotropic in the transverse planes. It indicates that the y cut corresponding to the transition point is a physically reasonable cutting parameter for selecting jets and, meanwhile, the relative transverse momentum k t at the transition point is the scale for the determination of physical jets. This conclusion is in good agreement with the experimental fact that the third jet (gluon jet) was historically first discovered in the energy region 17-30 GeV in e + e - collisions

Dynamics of Charged Events

International Nuclear Information System (INIS)

Bachas, Constantin; Bunster, Claudio; Henneaux, Marc

2009-01-01

In three spacetime dimensions the world volume of a magnetic source is a single point, an event. We make the event dynamical by regarding it as the imprint of a flux-carrying particle impinging from an extra dimension. This can be generalized to higher spacetime dimensions and to extended events. We exhibit universal observable consequences of the existence of events and argue that events are as important as particles or branes. We explain how events arise on the world volume of membranes in M theory, and in a Josephson junction in superconductivity.

Science is fun every single day

Indian Academy of Sciences (India)

Lawrence

partition in 1947, my mother landed in New Delhi as a young bride. ... In high school, science and maths came naturally to me, and I easily ... A new ambition to do research in mo- ... for me. She was already upset with me for vetoing her idea of.

SEU-hardened design for shift register in CMOS APS

International Nuclear Information System (INIS)

Meng Liya; Liu Zedong; Hu Dajiang; Wang Qingxiang

2012-01-01

The inverter-based quasi-static shift register in CMOS APS, which is used in ionizing radiation environment, is susceptible to single event upset (SEU), thus affecting the CMOS active pixel sensor (APS) working. The analysis of the SEU for inverter-based quasi-static shift register concludes that the most sensitive node to single event transient (SET) exists in the input of inverter, and the threshold voltage and capacitance of input node of inverter determine the capability of anti-SEU. A new method was proposed, which replaced the inverter with Schmitt trigger in shift register. Because there is a hysteresis on voltage transfer characteristic of Schmitt trigger, there is high flip threshold, thus better capability of anti-SEU can be achieved. Simulation results show that the anti-SEU capability of Schmitt trigger is 10 times more than that of inverter. (authors)

SEU measurements on HFETS and HFET SRAMS

International Nuclear Information System (INIS)

Remke, R.L.; Witmer, S.B.; Jones, S.D.F.; Barber, F.E.; Flesner, L.D.; O'Brien, M.E.

1989-01-01

The single event upset (SEU) response of n + -AlGaAs/GaAs heterostructure field effect transistors(HFETs--also known as SDHTs, HEMTs, MODFETs, and TEGFETs) and HFET static random access memories (SRAMs) was evaluated by measuring their response to focused electron pulses. Initially, focused electron beam pulses were used to measure and model HFET drain and gate SEU responses. Circuit simulations using these SEU models predicted that an HFET memory is most vulnerable to a single particle event in the area between the drain and the source (drain hit) of the OFF pull down HFET. Subsequent testing of an HFET SRAM cell confirmed this prediction. The authors discuss how these first SEU evaluations of HFETs and HFET memories show that measurements on individual HFETs and circuit simulations of SEU hits may be used to predict the SEU response of HFET memories

3D Thermal and Mechanical Analysis of a Single Event Burnout

Science.gov (United States)

Peretti, Gabriela; Demarco, Gustavo; Romero, Eduardo; Tais, Carlos

2015-08-01

This paper presents a study related to thermal and mechanical behavior of power DMOS transistors during a Single Event Burnout (SEB) process. We use a cylindrical heat generation region for emulating the thermal and mechanical phenomena related to the SEB. In this way, it is avoided the complexity of the mathematical treatment of the ion-device interaction. This work considers locating the heat generation region in positions that are more realistic than the ones used in previous work. For performing the study, we formulate and validate a new 3D model for the transistor that maintains the computational cost at reasonable level. The resulting mathematical models are solved by means of the Finite Element Method. The simulations results show that the failure dynamics is dominated by the mechanical stress in the metal layer. Additionally, the time to failure depends on the heat source position, for a given power and dimension of the generation region. The results suggest that 3D modeling should be considered for a detailed study of thermal and mechanical effects induced by SEBs.

Medium-energy heavy-ion single-event-burnout imaging of power MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Musseau, O.; Torres, A.; Campbell, A.B.; Knudson, A.R.; Buchner, S.; Fischer, B.; Schloegl, M.; Briand, P.

1999-12-01

The authors present the first experimental determination of the SEB sensitive area in a power MOSFET irradiated with a high-LET heavy-ion microbeam. They used a spectroscopy technique to perform coincident measurements of the charge collected in both source and drain junctions together, with a non-destructive technique (current limitation). The resulting charge collection images are related to the physical structure of the individual cells. These experimental data reveal the complex 3-dimensional behavior of a real structure, which can not easily be simulated using available tools. As the drain voltage is increased, the onset of burnout is reached, characterized by a sudden change in the charge collection image. Hot spots are observed where the collected charge reaches its maximum value. Those spots, due to burnout triggering events, correspond to areas where the silicon is degraded through thermal effects along a single ion track. This direct observation of SEB sensitive areas as applications for, either device hardening, by modifying doping profiles or layout of the cells, or for code calibration and device simulation.

A template-free approach for determining the latency of single events of auditory evoked M100

Energy Technology Data Exchange (ETDEWEB)

Burghoff, M [Physikalisch-Technische Bundesanstalt (PTB), Berlin (Germany); Link, A [Physikalisch-Technische Bundesanstalt (PTB), Berlin (Germany); Salajegheh, A [Cognitive Neuroscience of Language Laboratory, University of Maryland College Park, MD (United States); Elster, C [Physikalisch-Technische Bundesanstalt (PTB), Berlin (Germany); Poeppel, D [Cognitive Neuroscience of Language Laboratory, University of Maryland College Park, MD (United States); Trahms, L [Physikalisch-Technische Bundesanstalt (PTB), Berlin (Germany)

2005-02-07

The phase of the complex output of a narrow band Gaussian filter is taken to define the latency of the auditory evoked response M100 recorded by magnetoencephalography. It is demonstrated that this definition is consistent with the conventional peak latency. Moreover, it provides a tool for reducing the number of averages needed for a reliable estimation of the latency. Single-event latencies obtained by this procedure can be used to improve the signal quality of the conventional average by latency adjusted averaging. (note)

Measurement of the top quark mass using single top quark events in proton-proton collisions at √(s) = 8 TeV

Energy Technology Data Exchange (ETDEWEB)

Sirunyan, A.M.; Tumasyan, A. [Yerevan Physics Institute, Yerevan (Armenia); Adam, W. [Institut fuer Hochenergiephysik, Vienna (Austria); Collaboration: CMS Collaboration; and others

2017-05-15

A measurement of the top quark mass is reported in events containing a single top quark produced via the electroweak t channel. The analysis is performed using data from proton-proton collisions collected with the CMS detector at the LHC at a centre-of-mass energy of 8 TeV, corresponding to an integrated luminosity of 19.7 fb{sup -1}. Top quark candidates are reconstructed from their decay to a W boson decaying leptonically to a muon and a neutrino. The final state signature and kinematic properties of single top quark events in the t channel are used to enhance the purity of the sample, suppressing the contribution from top quark pair production. A fit to the invariant mass distribution of reconstructed top quark candidates yields a value of the top quark mass of 172.95 ± 0.77(stat){sup +0.97}{sub -0.93}(syst) GeV. This result is in agreement with the current world average, and represents the first measurement of the top quark mass in event topologies not dominated by top quark pair production, therefore contributing to future averages with partially uncorrelated systematic uncertainties and a largely uncorrelated statistical uncertainty. (orig.)

Measurement of the top quark mass using single top quark events in proton-proton collisions at $\\sqrt{s}= $ 8 TeV

CERN Document Server

Sirunyan, Albert M; Adam, Wolfgang; Aşılar, Ece; Bergauer, Thomas; Brandstetter, Johannes; Brondolin, Erica; Dragicevic, Marko; Erö, Janos; Flechl, Martin; Friedl, Markus; Fruehwirth, Rudolf; Ghete, Vasile Mihai; Hartl, Christian; Hörmann, Natascha; Hrubec, Josef; Jeitler, Manfred; König, Axel; Krätschmer, Ilse; Liko, Dietrich; Matsushita, Takashi; Mikulec, Ivan; Rabady, Dinyar; Rad, Navid; Rahbaran, Babak; Rohringer, Herbert; Schieck, Jochen; Strauss, Josef; Waltenberger, Wolfgang; Wulz, Claudia-Elisabeth; Dvornikov, Oleg; Makarenko, Vladimir; Mossolov, Vladimir; Suarez Gonzalez, Juan; Zykunov, Vladimir; Shumeiko, Nikolai; Alderweireldt, Sara; De Wolf, Eddi A; Janssen, Xavier; Lauwers, Jasper; Van De Klundert, Merijn; Van Haevermaet, Hans; Van Mechelen, Pierre; Van Remortel, Nick; Van Spilbeeck, Alex; Abu Zeid, Shimaa; Blekman, Freya; D'Hondt, Jorgen; Daci, Nadir; De Bruyn, Isabelle; Deroover, Kevin; Lowette, Steven; Moortgat, Seth; Moreels, Lieselotte; Olbrechts, Annik; Python, Quentin; Skovpen, Kirill; Tavernier, Stefaan; Van Doninck, Walter; Van Mulders, Petra; Van Parijs, Isis; Brun, Hugues; Clerbaux, Barbara; De Lentdecker, Gilles; Delannoy, Hugo; Fasanella, Giuseppe; Favart, Laurent; Goldouzian, Reza; Grebenyuk, Anastasia; Karapostoli, Georgia; Lenzi, Thomas; Léonard, Alexandre; Luetic, Jelena; Maerschalk, Thierry; Marinov, Andrey; Randle-conde, Aidan; Seva, Tomislav; Vander Velde, Catherine; Vanlaer, Pascal; Vannerom, David; Yonamine, Ryo; Zenoni, Florian; Zhang, Fengwangdong; Cimmino, Anna; Cornelis, Tom; Dobur, Didar; Fagot, Alexis; Gul, Muhammad; Khvastunov, Illia; Poyraz, Deniz; Salva Diblen, Sinem; Schöfbeck, Robert; Tytgat, Michael; Van Driessche, Ward; Yazgan, Efe; Zaganidis, Nicolas; Bakhshiansohi, Hamed; Beluffi, Camille; Bondu, Olivier; Brochet, Sébastien; Bruno, Giacomo; Caudron, Adrien; De Visscher, Simon; Delaere, Christophe; Delcourt, Martin; Francois, Brieuc; Giammanco, Andrea; Jafari, Abideh; Komm, Matthias; Krintiras, Georgios; Lemaitre, Vincent; Magitteri, Alessio; Mertens, Alexandre; Musich, Marco; Piotrzkowski, Krzysztof; Quertenmont, Loic; Selvaggi, Michele; Vidal Marono, Miguel; Wertz, Sébastien; Beliy, Nikita; Aldá Júnior, Walter Luiz; Alves, Fábio Lúcio; Alves, Gilvan; Brito, Lucas; Hensel, Carsten; Moraes, Arthur; Pol, Maria Elena; Rebello Teles, Patricia; Belchior Batista Das Chagas, Ewerton; Carvalho, Wagner; Chinellato, Jose; Custódio, Analu; Melo Da Costa, Eliza; Da Silveira, Gustavo Gil; De Jesus Damiao, Dilson; De Oliveira Martins, Carley; Fonseca De Souza, Sandro; Huertas Guativa, Lina Milena; Malbouisson, Helena; Matos Figueiredo, Diego; Mora Herrera, Clemencia; Mundim, Luiz; Nogima, Helio; Prado Da Silva, Wanda Lucia; Santoro, Alberto; Sznajder, Andre; Tonelli Manganote, Edmilson José; Torres Da Silva De Araujo, Felipe; Vilela Pereira, Antonio; Ahuja, Sudha; Bernardes, Cesar Augusto; Dogra, Sunil; Tomei, Thiago; De Moraes Gregores, Eduardo; Mercadante, Pedro G; Moon, Chang-Seong; Novaes, Sergio F; Padula, Sandra; Romero Abad, David; Ruiz Vargas, José Cupertino; Aleksandrov, Aleksandar; Hadjiiska, Roumyana; Iaydjiev, Plamen; Rodozov, Mircho; Stoykova, Stefka; Sultanov, Georgi; Vutova, Mariana; Dimitrov, Anton; Glushkov, Ivan; Litov, Leander; Pavlov, Borislav; Petkov, Peicho; Fang, Wenxing; Ahmad, Muhammad; Bian, Jian-Guo; Chen, Guo-Ming; Chen, He-Sheng; Chen, Mingshui; Chen, Ye; Cheng, Tongguang; Jiang, Chun-Hua; Leggat, Duncan; Liu, Zhenan; Romeo, Francesco; Ruan, Manqi; Shaheen, Sarmad Masood; Spiezia, Aniello; Tao, Junquan; Wang, Chunjie; Wang, Zheng; Zhang, Huaqiao; Zhao, Jingzhou; Ban, Yong; Chen, Geng; Li, Qiang; Liu, Shuai; Mao, Yajun; Qian, Si-Jin; Wang, Dayong; Xu, Zijun; Avila, Carlos; Cabrera, Andrés; Chaparro Sierra, Luisa Fernanda; Florez, Carlos; Gomez, Juan Pablo; González Hernández, Carlos Felipe; Ruiz Alvarez, José David; Sanabria, Juan Carlos; Godinovic, Nikola; Lelas, Damir; Puljak, Ivica; Ribeiro Cipriano, Pedro M; Sculac, Toni; Antunovic, Zeljko; Kovac, Marko; Brigljevic, Vuko; Ferencek, Dinko; Kadija, Kreso; Mesic, Benjamin; Susa, Tatjana; Attikis, Alexandros; Mavromanolakis, Georgios; Mousa, Jehad; Nicolaou, Charalambos; Ptochos, Fotios; Razis, Panos A; Rykaczewski, Hans; Tsiakkouri, Demetra; Finger, Miroslav; Finger Jr, Michael; Carrera Jarrin, Edgar; El-khateeb, Esraa; Elgammal, Sherif; Mohamed, Amr; Kadastik, Mario; Perrini, Lucia; Raidal, Martti; Tiko, Andres; Veelken, Christian; Eerola, Paula; Pekkanen, Juska; Voutilainen, Mikko; Härkönen, Jaakko; Jarvinen, Terhi; Karimäki, Veikko; Kinnunen, Ritva; Lampén, Tapio; Lassila-Perini, Kati; Lehti, Sami; Lindén, Tomas; Luukka, Panja-Riina; Tuominiemi, Jorma; Tuovinen, Esa; Wendland, Lauri; Talvitie, Joonas; Tuuva, Tuure; Besancon, Marc; Couderc, Fabrice; Dejardin, Marc; Denegri, Daniel; Fabbro, Bernard; Faure, Jean-Louis; Favaro, Carlotta; Ferri, Federico; Ganjour, Serguei; Ghosh, Saranya; Givernaud, Alain; Gras, Philippe; Hamel de Monchenault, Gautier; Jarry, Patrick; Kucher, Inna; Locci, Elizabeth; Machet, Martina; Malcles, Julie; Rander, John; Rosowsky, André; Titov, Maksym; Abdulsalam, Abdulla; Antropov, Iurii; Baffioni, Stephanie; Beaudette, Florian; Busson, Philippe; Cadamuro, Luca; Chapon, Emilien; Charlot, Claude; Davignon, Olivier; Granier de Cassagnac, Raphael; Jo, Mihee; Lisniak, Stanislav; Miné, Philippe; Nguyen, Matthew; Ochando, Christophe; Ortona, Giacomo; Paganini, Pascal; Pigard, Philipp; Regnard, Simon; Salerno, Roberto; Sirois, Yves; Stahl Leiton, Andre Govinda; Strebler, Thomas; Yilmaz, Yetkin; Zabi, Alexandre; Zghiche, Amina; Agram, Jean-Laurent; Andrea, Jeremy; Aubin, Alexandre; Bloch, Daniel; Brom, Jean-Marie; Buttignol, Michael; Chabert, Eric Christian; Chanon, Nicolas; Collard, Caroline; Conte, Eric; Coubez, Xavier; Fontaine, Jean-Charles; Gelé, Denis; Goerlach, Ulrich; Le Bihan, Anne-Catherine; Van Hove, Pierre; Gadrat, Sébastien; Beauceron, Stephanie; Bernet, Colin; Boudoul, Gaelle; Carrillo Montoya, Camilo Andres; Chierici, Roberto; Contardo, Didier; Courbon, Benoit; Depasse, Pierre; El Mamouni, Houmani; Fay, Jean; Gascon, Susan; Gouzevitch, Maxime; Grenier, Gérald; Ille, Bernard; Lagarde, Francois; Laktineh, Imad Baptiste; Lethuillier, Morgan; Mirabito, Laurent; Pequegnot, Anne-Laure; Perries, Stephane; Popov, Andrey; Sabes, David; Sordini, Viola; Vander Donckt, Muriel; Verdier, Patrice; Viret, Sébastien; Khvedelidze, Arsen; Tsamalaidze, Zviad; Autermann, Christian; Beranek, Sarah; Feld, Lutz; Kiesel, Maximilian Knut; Klein, Katja; Lipinski, Martin; Preuten, Marius; Schomakers, Christian; Schulz, Johannes; Verlage, Tobias; Albert, Andreas; Brodski, Michael; Dietz-Laursonn, Erik; Duchardt, Deborah; Endres, Matthias; Erdmann, Martin; Erdweg, Sören; Esch, Thomas; Fischer, Robert; Güth, Andreas; Hamer, Matthias; Hebbeker, Thomas; Heidemann, Carsten; Hoepfner, Kerstin; Knutzen, Simon; Merschmeyer, Markus; Meyer, Arnd; Millet, Philipp; Mukherjee, Swagata; Olschewski, Mark; Padeken, Klaas; Pook, Tobias; Radziej, Markus; Reithler, Hans; Rieger, Marcel; Scheuch, Florian; Sonnenschein, Lars; Teyssier, Daniel; Thüer, Sebastian; Cherepanov, Vladimir; Flügge, Günter; Kargoll, Bastian; Kress, Thomas; Künsken, Andreas; Lingemann, Joschka; Müller, Thomas; Nehrkorn, Alexander; Nowack, Andreas; Pistone, Claudia; Pooth, Oliver; Stahl, Achim; Aldaya Martin, Maria; Arndt, Till; Asawatangtrakuldee, Chayanit; Beernaert, Kelly; Behnke, Olaf; Behrens, Ulf; Bin Anuar, Afiq Aizuddin; Borras, Kerstin; Campbell, Alan; Connor, Patrick; Contreras-Campana, Christian; Costanza, Francesco; Diez Pardos, Carmen; Dolinska, Ganna; Eckerlin, Guenter; Eckstein, Doris; Eichhorn, Thomas; Eren, Engin; Gallo, Elisabetta; Garay Garcia, Jasone; Geiser, Achim; Gizhko, Andrii; Grados Luyando, Juan Manuel; Grohsjean, Alexander; Gunnellini, Paolo; Harb, Ali; Hauk, Johannes; Hempel, Maria; Jung, Hannes; Kalogeropoulos, Alexis; Karacheban, Olena; Kasemann, Matthias; Keaveney, James; Kleinwort, Claus; Korol, Ievgen; Krücker, Dirk; Lange, Wolfgang; Lelek, Aleksandra; Lenz, Teresa; Leonard, Jessica; Lipka, Katerina; Lobanov, Artur; Lohmann, Wolfgang; Mankel, Rainer; Melzer-Pellmann, Isabell-Alissandra; Meyer, Andreas Bernhard; Mittag, Gregor; Mnich, Joachim; Mussgiller, Andreas; Pitzl, Daniel; Placakyte, Ringaile; Raspereza, Alexei; Roland, Benoit; Sahin, Mehmet Özgür; Saxena, Pooja; Schoerner-Sadenius, Thomas; Spannagel, Simon; Stefaniuk, Nazar; Van Onsem, Gerrit Patrick; Walsh, Roberval; Wissing, Christoph; Blobel, Volker; Centis Vignali, Matteo; Draeger, Arne-Rasmus; Dreyer, Torben; Garutti, Erika; Gonzalez, Daniel; Haller, Johannes; Hoffmann, Malte; Junkes, Alexandra; Klanner, Robert; Kogler, Roman; Kovalchuk, Nataliia; Lapsien, Tobias; Marchesini, Ivan; Marconi, Daniele; Meyer, Mareike; Niedziela, Marek; Nowatschin, Dominik; Pantaleo, Felice; Peiffer, Thomas; Perieanu, Adrian; Scharf, Christian; Schleper, Peter; Schmidt, Alexander; Schumann, Svenja; Schwandt, Joern; Stadie, Hartmut; Steinbrück, Georg; Stober, Fred-Markus Helmut; Stöver, Marc; Tholen, Heiner; Troendle, Daniel; Usai, Emanuele; Vanelderen, Lukas; Vanhoefer, Annika; Vormwald, Benedikt; Akbiyik, Melike; Barth, Christian; Baur, Sebastian; Baus, Colin; Berger, Joram; Butz, Erik; Caspart, René; Chwalek, Thorsten; Colombo, Fabio; De Boer, Wim; Dierlamm, Alexander; Fink, Simon; Freund, Benedikt; Friese, Raphael; Giffels, Manuel; Gilbert, Andrew; Goldenzweig, Pablo; Haitz, Dominik; Hartmann, Frank; Heindl, Stefan Michael; Husemann, Ulrich; Katkov, Igor; Kudella, Simon; Mildner, Hannes; Mozer, Matthias Ulrich; Müller, Thomas; Plagge, Michael; Quast, Gunter; Rabbertz, Klaus; Röcker, Steffen; Roscher, Frank; Schröder, Matthias; Shvetsov, Ivan; Sieber, Georg; Simonis, Hans-Jürgen; Ulrich, Ralf; Wayand, Stefan; Weber, Marc; Weiler, Thomas; Williamson, Shawn; Wöhrmann, Clemens; Wolf, Roger; Anagnostou, Georgios; Daskalakis, Georgios; Geralis, Theodoros; Giakoumopoulou, Viktoria Athina; Kyriakis, Aristotelis; Loukas, Demetrios; Topsis-Giotis, Iasonas; Kesisoglou, Stilianos; Panagiotou, Apostolos; Saoulidou, Niki; Tziaferi, Eirini; Evangelou, Ioannis; Flouris, Giannis; Foudas, Costas; Kokkas, Panagiotis; Loukas, Nikitas; Manthos, Nikolaos; Papadopoulos, Ioannis; Paradas, Evangelos; Filipovic, Nicolas; Pasztor, Gabriella; Bencze, Gyorgy; Hajdu, Csaba; Horvath, Dezso; Sikler, Ferenc; Veszpremi, Viktor; Vesztergombi, Gyorgy; Zsigmond, Anna Julia; Beni, Noemi; Czellar, Sandor; Karancsi, János; Makovec, Alajos; Molnar, Jozsef; Szillasi, Zoltan; Bartók, Márton; Raics, Peter; Trocsanyi, Zoltan Laszlo; Ujvari, Balazs; Komaragiri, Jyothsna Rani; Bahinipati, Seema; Bhowmik, Sandeep; Choudhury, Somnath; Mal, Prolay; Mandal, Koushik; Nayak, Aruna; Sahoo, Deepak Kumar; Sahoo, Niladribihari; Swain, Sanjay Kumar; Bansal, Sunil; Beri, Suman Bala; Bhatnagar, Vipin; Chawla, Ridhi; Bhawandeep, Bhawandeep; Kalsi, Amandeep Kaur; Kaur, Anterpreet; Kaur, Manjit; Kumar, Ramandeep; Kumari, Priyanka; Mehta, Ankita; Mittal, Monika; Singh, Jasbir; Walia, Genius; Kumar, Ashok; Bhardwaj, Ashutosh; Choudhary, Brajesh C; Garg, Rocky Bala; Keshri, Sumit; Malhotra, Shivali; Naimuddin, Md; Ranjan, Kirti; Sharma, Ramkrishna; Sharma, Varun; Bhattacharya, Rajarshi; Bhattacharya, Satyaki; Chatterjee, Kalyanmoy; Dey, Sourav; Dutt, Suneel; Dutta, Suchandra; Ghosh, Shamik; Majumdar, Nayana; Modak, Atanu; Mondal, Kuntal; Mukhopadhyay, Supratik; Nandan, Saswati; Purohit, Arnab; Roy, Ashim; Roy, Debarati; Roy Chowdhury, Suvankar; Sarkar, Subir; Sharan, Manoj; Thakur, Shalini; Behera, Prafulla Kumar; Chudasama, Ruchi; Dutta, Dipanwita; Jha, Vishwajeet; Kumar, Vineet; Mohanty, Ajit Kumar; Netrakanti, Pawan Kumar; Pant, Lalit Mohan; Shukla, Prashant; Topkar, Anita; Aziz, Tariq; Dugad, Shashikant; Kole, Gouranga; Mahakud, Bibhuprasad; Mitra, Soureek; Mohanty, Gagan Bihari; Parida, Bibhuti; Sur, Nairit; Sutar, Bajrang; Banerjee, Sudeshna; Dewanjee, Ram Krishna; Ganguly, Sanmay; Guchait, Monoranjan; Jain, Sandhya; Kumar, Sanjeev; Maity, Manas; Majumder, Gobinda; Mazumdar, Kajari; Sarkar, Tanmay; Wickramage, Nadeesha; Chauhan, Shubhanshu; Dube, Sourabh; Hegde, Vinay; Kapoor, Anshul; Kothekar, Kunal; Pandey, Shubham; Rane, Aditee; Sharma, Seema; Chenarani, Shirin; Eskandari Tadavani, Esmaeel; Etesami, Seyed Mohsen; Khakzad, Mohsen; Mohammadi Najafabadi, Mojtaba; Naseri, Mohsen; Paktinat Mehdiabadi, Saeid; Rezaei Hosseinabadi, Ferdos; Safarzadeh, Batool; Zeinali, Maryam; Felcini, Marta; Grunewald, Martin; Abbrescia, Marcello; Calabria, Cesare; Caputo, Claudio; Colaleo, Anna; Creanza, Donato; Cristella, Leonardo; De Filippis, Nicola; De Palma, Mauro; Fiore, Luigi; Iaselli, Giuseppe; Maggi, Giorgio; Maggi, Marcello; Miniello, Giorgia; My, Salvatore; Nuzzo, Salvatore; Pompili, Alexis; Pugliese, Gabriella; Radogna, Raffaella; Ranieri, Antonio; Selvaggi, Giovanna; Sharma, Archana; Silvestris, Lucia; Venditti, Rosamaria; Verwilligen, Piet; Abbiendi, Giovanni; Battilana, Carlo; Bonacorsi, Daniele; Braibant-Giacomelli, Sylvie; Brigliadori, Luca; Campanini, Renato; Capiluppi, Paolo; Castro, Andrea; Cavallo, Francesca Romana; Chhibra, Simranjit Singh; Codispoti, Giuseppe; Cuffiani, Marco; Dallavalle, Gaetano-Marco; Fabbri, Fabrizio; Fanfani, Alessandra; Fasanella, Daniele; Giacomelli, Paolo; Grandi, Claudio; Guiducci, Luigi; Marcellini, Stefano; Masetti, Gianni; Montanari, Alessandro; Navarria, Francesco; Perrotta, Andrea; Rossi, Antonio; Rovelli, Tiziano; Siroli, Gian Piero; Tosi, Nicolò; Albergo, Sebastiano; Costa, Salvatore; Di Mattia, Alessandro; Giordano, Ferdinando; Potenza, Renato; Tricomi, Alessia; Tuve, Cristina; Barbagli, Giuseppe; Ciulli, Vitaliano; Civinini, Carlo; D'Alessandro, Raffaello; Focardi, Ettore; Lenzi, Piergiulio; Meschini, Marco; Paoletti, Simone; Russo, Lorenzo; Sguazzoni, Giacomo; Strom, Derek; Viliani, Lorenzo; Benussi, Luigi; Bianco, Stefano; Fabbri, Franco; Piccolo, Davide; Primavera, Federica; Calvelli, Valerio; Ferro, Fabrizio; Monge, Maria Roberta; Robutti, Enrico; Tosi, Silvano; Brianza, Luca; Brivio, Francesco; Ciriolo, Vincenzo; Dinardo, Mauro Emanuele; Fiorendi, Sara; Gennai, Simone; Ghezzi, Alessio; Govoni, Pietro; Malberti, Martina; Malvezzi, Sandra; Manzoni, Riccardo Andrea; Menasce, Dario; Moroni, Luigi; Paganoni, Marco; Pedrini, Daniele; Pigazzini, Simone; Ragazzi, Stefano; Tabarelli de Fatis, Tommaso; Buontempo, Salvatore; Cavallo, Nicola; De Nardo, Guglielmo; Di Guida, Salvatore; Esposito, Marco; Fabozzi, Francesco; Fienga, Francesco; Iorio, Alberto Orso Maria; Lanza, Giuseppe; Lista, Luca; Meola, Sabino; Paolucci, Pierluigi; Sciacca, Crisostomo; Thyssen, Filip; Azzi, Patrizia; Bacchetta, Nicola; Benato, Lisa; Bisello, Dario; Boletti, Alessio; Carlin, Roberto; Carvalho Antunes De Oliveira, Alexandra; Checchia, Paolo; Dall'Osso, Martino; De Castro Manzano, Pablo; Dorigo, Tommaso; Dosselli, Umberto; Gasparini, Fabrizio; Gasparini, Ugo; Gozzelino, Andrea; Lacaprara, Stefano; Margoni, Martino; Meneguzzo, Anna Teresa; Pazzini, Jacopo; Pozzobon, Nicola; Ronchese, Paolo; Simonetto, Franco; Torassa, Ezio; Zanetti, Marco; Zotto, Pierluigi; Zumerle, Gianni; Braghieri, Alessandro; Fallavollita, Francesco; Magnani, Alice; Montagna, Paolo; Ratti, Sergio P; Re, Valerio; Riccardi, Cristina; Salvini, Paola; Vai, Ilaria; Vitulo, Paolo; Alunni Solestizi, Luisa; Bilei, Gian Mario; Ciangottini, Diego; Fanò, Livio; Lariccia, Paolo; Leonardi, Roberto; Mantovani, Giancarlo; Menichelli, Mauro; Saha, Anirban; Santocchia, Attilio; Androsov, Konstantin; Azzurri, Paolo; Bagliesi, Giuseppe; Bernardini, Jacopo; Boccali, Tommaso; Castaldi, Rino; Ciocci, Maria Agnese; Dell'Orso, Roberto; Donato, Silvio; Fedi, Giacomo; Giassi, Alessandro; Grippo, Maria Teresa; Ligabue, Franco; Lomtadze, Teimuraz; Martini, Luca; Messineo, Alberto; Palla, Fabrizio; Rizzi, Andrea; Savoy-Navarro, Aurore; Spagnolo, Paolo; Tenchini, Roberto; Tonelli, Guido; Venturi, Andrea; Verdini, Piero Giorgio; Barone, Luciano; Cavallari, Francesca; Cipriani, Marco; Del Re, Daniele; Diemoz, Marcella; Gelli, Simone; Longo, Egidio; Margaroli, Fabrizio; Marzocchi, Badder; Meridiani, Paolo; Organtini, Giovanni; Paramatti, Riccardo; Preiato, Federico; Rahatlou, Shahram; Rovelli, Chiara; Santanastasio, Francesco; Amapane, Nicola; Arcidiacono, Roberta; Argiro, Stefano; Arneodo, Michele; Bartosik, Nazar; Bellan, Riccardo; Biino, Cristina; Cartiglia, Nicolo; Cenna, Francesca; Costa, Marco; Covarelli, Roberto; Degano, Alessandro; Demaria, Natale; Finco, Linda; Kiani, Bilal; Mariotti, Chiara; Maselli, Silvia; Migliore, Ernesto; Monaco, Vincenzo; Monteil, Ennio; Monteno, Marco; Obertino, Maria Margherita; Pacher, Luca; Pastrone, Nadia; Pelliccioni, Mario; Pinna Angioni, Gian Luca; Ravera, Fabio; Romero, Alessandra; Ruspa, Marta; Sacchi, Roberto; Shchelina, Ksenia; Sola, Valentina; Solano, Ada; Staiano, Amedeo; Traczyk, Piotr; Belforte, Stefano; Casarsa, Massimo; Cossutti, Fabio; Della Ricca, Giuseppe; Zanetti, Anna; Kim, Dong Hee; Kim, Gui Nyun; Kim, Min Suk; Lee, Sangeun; Lee, Seh Wook; Oh, Young Do; Sekmen, Sezen; Son, Dong-Chul; Yang, Yu Chul; Lee, Ari; Kim, Hyunchul; Brochero Cifuentes, Javier Andres; Kim, Tae Jeong; Cho, Sungwoong; Choi, Suyong; Go, Yeonju; Gyun, Dooyeon; Ha, Seungkyu; Hong, Byung-Sik; Jo, Youngkwon; Kim, Yongsun; Lee, Kisoo; Lee, Kyong Sei; Lee, Songkyo; Lim, Jaehoon; Park, Sung Keun; Roh, Youn; Almond, John; Kim, Junho; Lee, Haneol; Oh, Sung Bin; Radburn-Smith, Benjamin Charles; Seo, Seon-hee; Yang, Unki; Yoo, Hwi Dong; Yu, Geum Bong; Choi, Minkyoo; Kim, Hyunyong; Kim, Ji Hyun; Lee, Jason Sang Hun; Park, Inkyu; Ryu, Geonmo; Ryu, Min Sang; Choi, Young-Il; Goh, Junghwan; Hwang, Chanwook; Lee, Jongseok; Yu, Intae; Dudenas, Vytautas; Juodagalvis, Andrius; Vaitkus, Juozas; Ahmed, Ijaz; Ibrahim, Zainol Abidin; Md Ali, Mohd Adli Bin; Mohamad Idris, Faridah; Wan Abdullah, Wan Ahmad Tajuddin; Yusli, Mohd Nizam; Zolkapli, Zukhaimira; Castilla-Valdez, Heriberto; De La Cruz-Burelo, Eduard; Heredia-De La Cruz, Ivan; Hernandez-Almada, Alberto; Lopez-Fernandez, Ricardo; Magaña Villalba, Ricardo; Mejia Guisao, Jhovanny; Sánchez Hernández, Alberto; Carrillo Moreno, Salvador; Oropeza Barrera, Cristina; Vazquez Valencia, Fabiola; Carpinteyro, Severiano; Pedraza, Isabel; Salazar Ibarguen, Humberto Antonio; Uribe Estrada, Cecilia; Morelos Pineda, Antonio; Krofcheck, David; Butler, Philip H; Ahmad, Ashfaq; Ahmad, Muhammad; Hassan, Qamar; Hoorani, Hafeez R; Khan, Wajid Ali; Saddique, Asif; Shah, Mehar Ali; Shoaib, Muhammad; Waqas, Muhammad; Bialkowska, Helena; Bluj, Michal; Boimska, Bożena; Frueboes, Tomasz; Górski, Maciej; Kazana, Malgorzata; Nawrocki, Krzysztof; Romanowska-Rybinska, Katarzyna; Szleper, Michal; Zalewski, Piotr; Bunkowski, Karol; Byszuk, Adrian; Doroba, Krzysztof; Kalinowski, Artur; Konecki, Marcin; Krolikowski, Jan; Misiura, Maciej; Olszewski, Michal; Walczak, Marek; Bargassa, Pedrame; Beirão Da Cruz E Silva, Cristóvão; Calpas, Betty; Di Francesco, Agostino; Faccioli, Pietro; Ferreira Parracho, Pedro Guilherme; Gallinaro, Michele; Hollar, Jonathan; Leonardo, Nuno; Lloret Iglesias, Lara; Nemallapudi, Mythra Varun; Rodrigues Antunes, Joao; Seixas, Joao; Toldaiev, Oleksii; Vadruccio, Daniele; Varela, Joao; Afanasiev, Serguei; Bunin, Pavel; Gavrilenko, Mikhail; Golutvin, Igor; Gorbunov, Ilya; Kamenev, Alexey; Karjavin, Vladimir; Lanev, Alexander; Malakhov, Alexander; Matveev, Viktor; Palichik, Vladimir; Perelygin, Victor; Shmatov, Sergey; Shulha, Siarhei; Skatchkov, Nikolai; Smirnov, Vitaly; Voytishin, Nikolay; Zarubin, Anatoli; Chtchipounov, Leonid; Golovtsov, Victor; Ivanov, Yury; Kim, Victor; Kuznetsova, Ekaterina; Murzin, Victor; Oreshkin, Vadim; Sulimov, Valentin; Vorobyev, Alexey; Andreev, Yuri; Dermenev, Alexander; Gninenko, Sergei; Golubev, Nikolai; Karneyeu, Anton; Kirsanov, Mikhail; Krasnikov, Nikolai; Pashenkov, Anatoli; Tlisov, Danila; Toropin, Alexander; Epshteyn, Vladimir; Gavrilov, Vladimir; Lychkovskaya, Natalia; Popov, Vladimir; Pozdnyakov, Ivan; Safronov, Grigory; Spiridonov, Alexander; Toms, Maria; Vlasov, Evgueni; Zhokin, Alexander; Aushev, Tagir; Bylinkin, Alexander; Danilov, Mikhail; Popova, Elena; Rusinov, Vladimir; Andreev, Vladimir; Azarkin, Maksim; Dremin, Igor; Kirakosyan, Martin; Leonidov, Andrey; Terkulov, Adel; Baskakov, Alexey; Belyaev, Andrey; Boos, Edouard; Bunichev, Viacheslav; Dubinin, Mikhail; Dudko, Lev; Klyukhin, Vyacheslav; Kodolova, Olga; Korneeva, Natalia; Lokhtin, Igor; Miagkov, Igor; Obraztsov, Stepan; Perfilov, Maxim; Savrin, Viktor; Volkov, Petr; Blinov, Vladimir; Skovpen, Yuri; Shtol, Dmitry; Azhgirey, Igor; Bayshev, Igor; Bitioukov, Sergei; Elumakhov, Dmitry; Kachanov, Vassili; Kalinin, Alexey; Konstantinov, Dmitri; Krychkine, Victor; Petrov, Vladimir; Ryutin, Roman; Sobol, Andrei; Troshin, Sergey; Tyurin, Nikolay; Uzunian, Andrey; Volkov, Alexey; Adzic, Petar; Cirkovic, Predrag; Devetak, Damir; Dordevic, Milos; Milosevic, Jovan; Rekovic, Vladimir; Alcaraz Maestre, Juan; Barrio Luna, Mar; Calvo, Enrique; Cerrada, Marcos; Chamizo Llatas, Maria; Colino, Nicanor; De La Cruz, Begona; Delgado Peris, Antonio; Escalante Del Valle, Alberto; Fernandez Bedoya, Cristina; Fernández Ramos, Juan Pablo; Flix, Jose; Fouz, Maria Cruz; Garcia-Abia, Pablo; Gonzalez Lopez, Oscar; Goy Lopez, Silvia; Hernandez, Jose M; Josa, Maria Isabel; Navarro De Martino, Eduardo; Pérez-Calero Yzquierdo, Antonio María; Puerta Pelayo, Jesus; Quintario Olmeda, Adrián; Redondo, Ignacio; Romero, Luciano; Senghi Soares, Mara; de Trocóniz, Jorge F; Missiroli, Marino; Moran, Dermot; Cuevas, Javier; Fernandez Menendez, Javier; Gonzalez Caballero, Isidro; González Fernández, Juan Rodrigo; Palencia Cortezon, Enrique; Sanchez Cruz, Sergio; Suárez Andrés, Ignacio; Vischia, Pietro; Vizan Garcia, Jesus Manuel; Cabrillo, Iban Jose; Calderon, Alicia; Curras, Esteban; Fernandez, Marcos; Garcia-Ferrero, Juan; Gomez, Gervasio; Lopez Virto, Amparo; Marco, Jesus; Martinez Rivero, Celso; Matorras, Francisco; Piedra Gomez, Jonatan; Rodrigo, Teresa; Ruiz-Jimeno, Alberto; Scodellaro, Luca; Trevisani, Nicolò; Vila, Ivan; Vilar Cortabitarte, Rocio; Abbaneo, Duccio; Auffray, Etiennette; Auzinger, Georg; Baillon, Paul; Ball, Austin; Barney, David; Bloch, Philippe; Bocci, Andrea; Botta, Cristina; Camporesi, Tiziano; Castello, Roberto; Cepeda, Maria; Cerminara, Gianluca; Chen, Yi; D'Enterria, David; Dabrowski, Anne; Daponte, Vincenzo; David Tinoco Mendes, Andre; De Gruttola, Michele; De Roeck, Albert; Di Marco, Emanuele; Dobson, Marc; Dorney, Brian; Du Pree, Tristan; Duggan, Daniel; Dünser, Marc; Dupont, Niels; Elliott-Peisert, Anna; Everaerts, Pieter; Fartoukh, Stephane; Franzoni, Giovanni; Fulcher, Jonathan; Funk, Wolfgang; Gigi, Dominique; Gill, Karl; Girone, Maria; Glege, Frank; Gulhan, Doga; Gundacker, Stefan; Guthoff, Moritz; Harris, Philip; Hegeman, Jeroen; Innocente, Vincenzo; Janot, Patrick; Kieseler, Jan; Kirschenmann, Henning; Knünz, Valentin; Kornmayer, Andreas; Kortelainen, Matti J; Kousouris, Konstantinos; Krammer, Manfred; Lange, Clemens; Lecoq, Paul; Lourenco, Carlos; Lucchini, Marco Toliman; Malgeri, Luca; Mannelli, Marcello; Martelli, Arabella; Meijers, Frans; Merlin, Jeremie Alexandre; Mersi, Stefano; Meschi, Emilio; Milenovic, Predrag; Moortgat, Filip; Morovic, Srecko; Mulders, Martijn; Neugebauer, Hannes; Orfanelli, Styliani; Orsini, Luciano; Pape, Luc; Perez, Emmanuel; Peruzzi, Marco; Petrilli, Achille; Petrucciani, Giovanni; Pfeiffer, Andreas; Pierini, Maurizio; Racz, Attila; Reis, Thomas; Rolandi, Gigi; Rovere, Marco; Sakulin, Hannes; Sauvan, Jean-Baptiste; Schäfer, Christoph; Schwick, Christoph; Seidel, Markus; Sharma, Archana; Silva, Pedro; Sphicas, Paraskevas; Steggemann, Jan; Stoye, Markus; Takahashi, Yuta; Tosi, Mia; Treille, Daniel; Triossi, Andrea; Tsirou, Andromachi; Veckalns, Viesturs; Veres, Gabor Istvan; Verweij, Marta; Wardle, Nicholas; Wöhri, Hermine Katharina; Zagoździńska, Agnieszka; Zeuner, Wolfram Dietrich; Bertl, Willi; Deiters, Konrad; Erdmann, Wolfram; Horisberger, Roland; Ingram, Quentin; Kaestli, Hans-Christian; Kotlinski, Danek; Langenegger, Urs; Rohe, Tilman; Wiederkehr, Stephan Albert; Bachmair, Felix; Bäni, Lukas; Bianchini, Lorenzo; Casal, Bruno; Dissertori, Günther; Dittmar, Michael; Donegà, Mauro; Grab, Christoph; Heidegger, Constantin; 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Cussans, David; Flacher, Henning; Goldstein, Joel; Grimes, Mark; Heath, Greg P; Heath, Helen F; Jacob, Jeson; Kreczko, Lukasz; Lucas, Chris; Newbold, Dave M; Paramesvaran, Sudarshan; Poll, Anthony; Sakuma, Tai; Seif El Nasr-storey, Sarah; Smith, Dominic; Smith, Vincent J; Bell, Ken W; Belyaev, Alexander; Brew, Christopher; Brown, Robert M; Calligaris, Luigi; Cieri, Davide; Cockerill, David JA; Coughlan, John A; Harder, Kristian; Harper, Sam; Olaiya, Emmanuel; Petyt, David; Shepherd-Themistocleous, Claire; Thea, Alessandro; Tomalin, Ian R; Williams, Thomas; Baber, Mark; Bainbridge, Robert; Buchmuller, Oliver; Bundock, Aaron; Burton, Darren; Casasso, Stefano; Citron, Matthew; Colling, David; Corpe, Louie; Dauncey, Paul; Davies, Gavin; De Wit, Adinda; Della Negra, Michel; Di Maria, Riccardo; Dunne, Patrick; Elwood, Adam; Futyan, David; Haddad, Yacine; Hall, Geoffrey; Iles, Gregory; James, Thomas; Lane, Rebecca; Laner, Christian; Lucas, Robyn; Lyons, Louis; Magnan, Anne-Marie; Malik, Sarah; 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Piperov, Stefan; Sagir, Sinan; Spencer, Eric; Syarif, Rizki; Breedon, Richard; Burns, Dustin; Calderon De La Barca Sanchez, Manuel; Chauhan, Sushil; Chertok, Maxwell; Conway, John; Conway, Rylan; Cox, Peter Timothy; Erbacher, Robin; Flores, Chad; Funk, Garrett; Gardner, Michael; Ko, Winston; Lander, Richard; Mclean, Christine; Mulhearn, Michael; Pellett, Dave; Pilot, Justin; Shalhout, Shalhout; Shi, Mengyao; Smith, John; Squires, Michael; Stolp, Dustin; Tos, Kyle; Tripathi, Mani; Bachtis, Michail; Bravo, Cameron; Cousins, Robert; Dasgupta, Abhigyan; Florent, Alice; Hauser, Jay; Ignatenko, Mikhail; Mccoll, Nickolas; Saltzberg, David; Schnaible, Christian; Valuev, Vyacheslav; Weber, Matthias; Bouvier, Elvire; Burt, Kira; Clare, Robert; Ellison, John Anthony; Gary, J William; Ghiasi Shirazi, Seyyed Mohammad Amin; Hanson, Gail; Heilman, Jesse; Jandir, Pawandeep; Kennedy, Elizabeth; Lacroix, Florent; Long, Owen Rosser; Olmedo Negrete, Manuel; Paneva, Mirena Ivova; Shrinivas, Amithabh; Si, Weinan; Wei, Hua; Wimpenny, Stephen; Yates, Brent; Branson, James G; Cerati, Giuseppe Benedetto; Cittolin, Sergio; Derdzinski, Mark; Gerosa, Raffaele; Holzner, André; Klein, Daniel; Krutelyov, Vyacheslav; Letts, James; Macneill, Ian; Olivito, Dominick; Padhi, Sanjay; Pieri, Marco; Sani, Matteo; Sharma, Vivek; Simon, Sean; Tadel, Matevz; Vartak, Adish; Wasserbaech, Steven; Welke, Charles; Wood, John; Würthwein, Frank; Yagil, Avraham; Zevi Della Porta, Giovanni; Amin, Nick; Bhandari, Rohan; Bradmiller-Feld, John; Campagnari, Claudio; Dishaw, Adam; Dutta, Valentina; Franco Sevilla, Manuel; George, Christopher; Golf, Frank; Gouskos, Loukas; Gran, Jason; Heller, Ryan; Incandela, Joe; Mullin, Sam Daniel; Ovcharova, Ana; Qu, Huilin; Richman, Jeffrey; Stuart, David; Suarez, Indara; Yoo, Jaehyeok; Anderson, Dustin; Bendavid, Joshua; Bornheim, Adolf; Bunn, Julian; Duarte, Javier; Lawhorn, Jay Mathew; Mott, Alexander; Newman, Harvey B; Pena, Cristian; Spiropulu, Maria; Vlimant, Jean-Roch; Xie, Si; Zhu, Ren-Yuan; Andrews, Michael Benjamin; Ferguson, Thomas; Paulini, Manfred; Russ, James; Sun, Menglei; Vogel, Helmut; Vorobiev, Igor; Weinberg, Marc; Cumalat, John Perry; Ford, William T; Jensen, Frank; Johnson, Andrew; Krohn, Michael; Leontsinis, Stefanos; Mulholland, Troy; Stenson, Kevin; Wagner, Stephen Robert; Alexander, James; Chaves, Jorge; Chu, Jennifer; Dittmer, Susan; Mcdermott, Kevin; Mirman, Nathan; Nicolas Kaufman, Gala; Patterson, Juliet Ritchie; Rinkevicius, Aurelijus; Ryd, Anders; Skinnari, Louise; Soffi, Livia; Tan, Shao Min; Tao, Zhengcheng; Thom, Julia; Tucker, Jordan; Wittich, Peter; Zientek, Margaret; Winn, Dave; Abdullin, Salavat; Albrow, Michael; Apollinari, Giorgio; Apresyan, Artur; Banerjee, Sunanda; Bauerdick, Lothar AT; Beretvas, Andrew; Berryhill, Jeffrey; Bhat, Pushpalatha C; Bolla, Gino; Burkett, Kevin; Butler, Joel Nathan; Cheung, Harry; Chlebana, Frank; Cihangir, Selcuk; Cremonesi, Matteo; Elvira, Victor Daniel; Fisk, Ian; Freeman, Jim; Gottschalk, Erik; Gray, Lindsey; Green, Dan; Grünendahl, Stefan; Gutsche, Oliver; Hare, Daryl; Harris, Robert M; Hasegawa, Satoshi; Hirschauer, James; Hu, Zhen; Jayatilaka, Bodhitha; Jindariani, Sergo; Johnson, Marvin; Joshi, Umesh; Klima, Boaz; Kreis, Benjamin; Lammel, Stephan; Linacre, Jacob; Lincoln, Don; Lipton, Ron; Liu, Miaoyuan; Liu, Tiehui; Lopes De Sá, Rafael; Lykken, Joseph; Maeshima, Kaori; Magini, Nicolo; Marraffino, John Michael; Maruyama, Sho; Mason, David; McBride, Patricia; Merkel, Petra; Mrenna, Stephen; Nahn, Steve; O'Dell, Vivian; Pedro, Kevin; Prokofyev, Oleg; Rakness, Gregory; Ristori, Luciano; Sexton-Kennedy, Elizabeth; Soha, Aron; Spalding, William J; Spiegel, Leonard; Stoynev, Stoyan; Strait, James; Strobbe, Nadja; Taylor, Lucas; Tkaczyk, Slawek; Tran, Nhan Viet; Uplegger, Lorenzo; Vaandering, Eric Wayne; Vernieri, Caterina; Verzocchi, Marco; Vidal, Richard; Wang, Michael; Weber, Hannsjoerg Artur; Whitbeck, Andrew; Wu, Yujun; Acosta, Darin; Avery, Paul; Bortignon, Pierluigi; Bourilkov, Dimitri; Brinkerhoff, Andrew; Carnes, Andrew; Carver, Matthew; Curry, David; Das, Souvik; Field, Richard D; Furic, Ivan-Kresimir; Konigsberg, Jacobo; Korytov, Andrey; Low, Jia Fu; Ma, Peisen; Matchev, Konstantin; Mei, Hualin; Mitselmakher, Guenakh; Rank, Douglas; Shchutska, Lesya; Sperka, David; Thomas, Laurent; Wang, Jian; Wang, Sean-Jiun; Yelton, John; Linn, Stephan; Markowitz, Pete; Martinez, German; Rodriguez, Jorge Luis; Ackert, Andrew; Adams, Todd; Askew, Andrew; Bein, Samuel; Hagopian, Sharon; Hagopian, Vasken; Johnson, Kurtis F; Kolberg, Ted; Prosper, Harrison; Santra, Arka; Yohay, Rachel; Baarmand, Marc M; Bhopatkar, Vallary; Colafranceschi, Stefano; Hohlmann, Marcus; Noonan, Daniel; Roy, Titas; Yumiceva, Francisco; Adams, Mark Raymond; Apanasevich, Leonard; Berry, Douglas; Betts, Russell Richard; Bucinskaite, Inga; Cavanaugh, Richard; Evdokimov, Olga; Gauthier, Lucie; Gerber, Cecilia Elena; Hofman, David Jonathan; Jung, Kurt; Sandoval Gonzalez, Irving Daniel; Varelas, Nikos; Wang, Hui; Wu, Zhenbin; Zakaria, Mohammed; Zhang, Jingyu; Bilki, Burak; Clarida, Warren; Dilsiz, Kamuran; Durgut, Süleyman; Gandrajula, Reddy Pratap; Haytmyradov, Maksat; Khristenko, Viktor; Merlo, Jean-Pierre; Mermerkaya, Hamit; Mestvirishvili, Alexi; Moeller, Anthony; Nachtman, Jane; Ogul, Hasan; Onel, Yasar; Ozok, Ferhat; Penzo, Aldo; Snyder, Christina; Tiras, Emrah; Wetzel, James; Yi, Kai; Blumenfeld, Barry; Cocoros, Alice; Eminizer, Nicholas; Fehling, David; Feng, Lei; Gritsan, Andrei; Maksimovic, Petar; Roskes, Jeffrey; Sarica, Ulascan; Swartz, Morris; Xiao, Meng; You, Can; Al-bataineh, Ayman; Baringer, Philip; Bean, Alice; Boren, Samuel; Bowen, James; Castle, James; Forthomme, Laurent; Kenny III, Raymond Patrick; Khalil, Sadia; Kropivnitskaya, Anna; Majumder, Devdatta; Mcbrayer, William; Murray, Michael; Sanders, Stephen; Stringer, Robert; Tapia Takaki, Daniel; Wang, Quan; Ivanov, Andrew; Kaadze, Ketino; Maravin, Yurii; Mohammadi, Abdollah; Saini, Lovedeep Kaur; Skhirtladze, Nikoloz; Toda, Sachiko; 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Charaf, Otman; Hahn, Kristan Allan; Kumar, Ajay; Mucia, Nicholas; Odell, Nathaniel; Pollack, Brian; Schmitt, Michael Henry; Sung, Kevin; Trovato, Marco; Velasco, Mayda; Dev, Nabarun; Hildreth, Michael; Hurtado Anampa, Kenyi; Jessop, Colin; Karmgard, Daniel John; Kellams, Nathan; Lannon, Kevin; Marinelli, Nancy; Meng, Fanbo; Mueller, Charles; Musienko, Yuri; Planer, Michael; Reinsvold, Allison; Ruchti, Randy; Rupprecht, Nathaniel; Smith, Geoffrey; Taroni, Silvia; Wayne, Mitchell; Wolf, Matthias; Woodard, Anna; Alimena, Juliette; Antonelli, Louis; Bylsma, Ben; Durkin, Lloyd Stanley; Flowers, Sean; Francis, Brian; Hart, Andrew; Hill, Christopher; Hughes, Richard; Ji, Weifeng; Liu, Bingxuan; Luo, Wuming; Puigh, Darren; Winer, Brian L; Wulsin, Howard Wells; Cooperstein, Stephane; Driga, Olga; Elmer, Peter; Hardenbrook, Joshua; Hebda, Philip; Lange, David; Luo, Jingyu; Marlow, Daniel; Medvedeva, Tatiana; Mei, Kelvin; Ojalvo, Isabel; Olsen, James; Palmer, Christopher; Piroué, Pierre; Stickland, David; 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Nash, Kevin; Osherson, Marc; Saka, Halil; Salur, Sevil; Schnetzer, Steve; Sheffield, David; Somalwar, Sunil; Stone, Robert; Thomas, Scott; Thomassen, Peter; Walker, Matthew; Delannoy, Andrés G; Foerster, Mark; Heideman, Joseph; Riley, Grant; Rose, Keith; Spanier, Stefan; Thapa, Krishna; Bouhali, Othmane; Celik, Ali; Dalchenko, Mykhailo; De Mattia, Marco; Delgado, Andrea; Dildick, Sven; Eusebi, Ricardo; Gilmore, Jason; Huang, Tao; Juska, Evaldas; Kamon, Teruki; Mueller, Ryan; Pakhotin, Yuriy; Patel, Rishi; Perloff, Alexx; Perniè, Luca; Rathjens, Denis; Safonov, Alexei; Tatarinov, Aysen; Ulmer, Keith; Akchurin, Nural; Cowden, Christopher; Damgov, Jordan; De Guio, Federico; Dragoiu, Cosmin; Dudero, Phillip Russell; Faulkner, James; Gurpinar, Emine; Kunori, Shuichi; Lamichhane, Kamal; Lee, Sung Won; Libeiro, Terence; Peltola, Timo; Undleeb, Sonaina; Volobouev, Igor; Wang, Zhixing; Greene, Senta; Gurrola, Alfredo; Janjam, Ravi; Johns, Willard; Maguire, Charles; Melo, Andrew; Ni, Hong; Sheldon, Paul; Tuo, Shengquan; Velkovska, Julia; Xu, Qiao; Arenton, Michael Wayne; Barria, Patrizia; Cox, Bradley; Goodell, Joseph; Hirosky, Robert; Ledovskoy, Alexander; Li, Hengne; Neu, Christopher; Sinthuprasith, Tutanon; Sun, Xin; Wang, Yanchu; Wolfe, Evan; Xia, Fan; Clarke, Christopher; Harr, Robert; Karchin, Paul Edmund; Sturdy, Jared; Belknap, Donald; Buchanan, James; Caillol, Cécile; Dasu, Sridhara; Dodd, Laura; Duric, Senka; Gomber, Bhawna; Grothe, Monika; Herndon, Matthew; Hervé, Alain; Klabbers, Pamela; Lanaro, Armando; Levine, Aaron; Long, Kenneth; Loveless, Richard; Perry, Thomas; Pierro, Giuseppe Antonio; Polese, Giovanni; Ruggles, Tyler; Savin, Alexander; Smith, Nicholas; Smith, Wesley H; Taylor, Devin; Woods, Nathaniel

2017-05-29

A measurement of the top quark mass is reported in events containing a single top quark produced via the electroweak $t$ channel. The analysis is performed using data from proton-proton collisions collected with the CMS detector at the LHC at a centre-of-mass energy of 8 TeV, corresponding to an integrated luminosity of 19.7 fb$^{-1}$. The top quark is reconstructed from its decay to a W boson and a b quark, with the W boson decaying leptonically to a muon and a neutrino. The specific topology and kinematic properties of single top quark events in the $t$ channel are used to enhance the purity of the sample, suppressing the contribution from top quark pair production. A fit to the invariant mass distribution of reconstructed top quark candidates yields a value of the top quark mass of 172.95 $\\pm$ 0.77 (stat) $^{+0.97}_{-0.93}$ (syst) GeV. This result is in agreement with the current world average, and represents the first measurement of the top quark mass in event topologies not dominated by top quark pair p...

The dual role of multiple-transistor charge sharing collection in single-event transients

International Nuclear Information System (INIS)

Guo Yang; Chen Jian-Jun; He Yi-Bai; Liang Bin; Liu Bi-Wei

2013-01-01

As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal—oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies. (condensed matter: structural, mechanical, and thermal properties)

Femtomolar detection of single mismatches by discriminant analysis of DNA hybridization events using gold nanoparticles.

Science.gov (United States)

Ma, Xingyi; Sim, Sang Jun

2013-03-21

Even though DNA-based nanosensors have been demonstrated for quantitative detection of analytes and diseases, hybridization events have never been numerically investigated for further understanding of DNA mediated interactions. Here, we developed a nanoscale platform with well-designed capture and detection gold nanoprobes to precisely evaluate the hybridization events. The capture gold nanoprobes were mono-laid on glass and the detection probes were fabricated via a novel competitive conjugation method. The two kinds of probes combined in a suitable orientation following the hybridization with the target. We found that hybridization efficiency was markedly dependent on electrostatic interactions between DNA strands, which can be tailored by adjusting the salt concentration of the incubation solution. Due to the much lower stability of the double helix formed by mismatches, the hybridization efficiencies of single mismatched (MMT) and perfectly matched DNA (PMT) were different. Therefore, we obtained an optimized salt concentration that allowed for discrimination of MMT from PMT without stringent control of temperature or pH. The results indicated this to be an ultrasensitive and precise nanosensor for the diagnosis of genetic diseases.

#JeSuisCharlie: Towards a Multi-Method Study of Hybrid Media Events

Directory of Open Access Journals (Sweden)

Johanna Sumiala

2016-10-01

Full Text Available This article suggests a new methodological model for the study of hybrid media events with global appeal. This model, developed in the project on the 2015 Charlie Hebdo attacks in Paris, was created specifically for researching digital media—and in particular, Twitter. The article is structured as follows. Firstly, the methodological scope is discussed against the theoretical context, e.g. the theory of media events. In the theoretical discussion, special emphasis is given to i disruptive, upsetting, or disintegrative media events and hybrid media events and ii the conditions of today’s heterogeneous and globalised media communication landscape. Secondly, the article introduces a multi-method approach developed for the analysis of hybrid media events. In this model, computational social science—namely, automated content analysis (ACA and social network analytics (SNA—are combined with a qualitative approach—specifically, digital ethnography. The article outlines three key phases for research in which the interplay between quantitative and qualitative approaches is played out. In the first phase, preliminary digital ethnography is applied to provide the outline of the event. In the second phase, quantitative social network analytics are applied to construct the digital field for research. In this phase, it is necessary to map a what is circulating on the websites and b where this circulation takes place. The third and final phase applies a qualitative approach and digital ethnography to provide a more nuanced, in-depth interpretation of what (substance/content is circulating and how this material connects with the ‘where’ in the digital landscape, hence constituting links and connections in the hybrid media landscape. In conclusion, the article reflects on how this multi-method approach contributes to understanding the workings of today’s hybrid media events: how they create and maintain symbolic battles over certain imagined

Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility

International Nuclear Information System (INIS)

Jones, R.; Chugg, A.M.; Jones, C.M.S.; Duncan, P.H.; Dyer, C.S.; Sanderson, C.

1999-01-01

A laser system has been designed to be capable of delivering large numbers of pulses across a micro-chip die under computer control, so as rapidly to generate upset and latch-up cross-section curves, in order to provide an efficient screening tool for SEE (single event effect) susceptibility. The system has been automated to make screening of parts for use in an SEE environment fast, efficient and inexpensive. A comparison between ion beam test results and laser test results has been used to develop initial calibrations between laser energy and LET (linear energy transfer)

Automating the CMS DAQ

International Nuclear Information System (INIS)

Bauer, G; Darlea, G-L; Gomez-Ceballos, G; Bawej, T; Chaze, O; Coarasa, J A; Deldicque, C; Dobson, M; Dupont, A; Gigi, D; Glege, F; Gomez-Reino, R; Hartl, C; Hegeman, J; Masetti, L; Behrens, U; Branson, J; Cittolin, S; Holzner, A; Erhan, S

2014-01-01

We present the automation mechanisms that have been added to the Data Acquisition and Run Control systems of the Compact Muon Solenoid (CMS) experiment during Run 1 of the LHC, ranging from the automation of routine tasks to automatic error recovery and context-sensitive guidance to the operator. These mechanisms helped CMS to maintain a data taking efficiency above 90% and to even improve it to 95% towards the end of Run 1, despite an increase in the occurrence of single-event upsets in sub-detector electronics at high LHC luminosity.

CRRES microelectronics test package (MEP)

International Nuclear Information System (INIS)

Mullen, E.G.; Ray, K.P.

1993-01-01

The Microelectronics Test Package (MEP) flown on board the Combined Release and Radiation Effects Satellite (CRRES) contained over 60 device types and approximately 400 total devices which were tested for both single event upset (SEU) and total dose (parametric degradation and annealing). A description of the experiment, the method of testing devices, and the structure of data acquisition are presented. Sample flight data are shown. These included SEUs from a GaAs 1 K RAM during the March 1991 solar flare, and a comparison between passive shielding and a specially designed spot shielding package

The fast neutron SEU cross section of a 4 Mb SRAM memory

International Nuclear Information System (INIS)

Pereira Junior, Evaldo C.F.; Goncalez, Odair L.; Cruz, Marco Aurelio da; Prado, Adriane Cristina Mendes; Federico, Claudio Antonio; Gaspar, Felipe de Barros

2013-01-01

The results of a static test of single event upset (SEU) produced by fast neutrons on an ISSI 4Mb SRAM memory are reported in this work. To perform the tests, it was built a platform based on a motherboard which is controlled by microprocessor, whose function is to perform the writing, reading and control of the memories under irradiation. The irradiation was performed with a set of 8 241 Am-Be neutrons source in a quasi-isotropic incidence. The SEU cross was calculated from the accumulated bit flip count. (author)

Densification of sintered molybdenum during hot upsetting: experiments and modelling

International Nuclear Information System (INIS)

Parteder, E.; Kopp, R.

1999-01-01

The densification behaviour of sintered molybdenum is investigated experimentally and by modelling using a pressure dependent plasticity model. Therefore the yield condition of Gurson, extended by Tvergaard is used. The uniaxial compression test is applied to determine the evolution of the density as well as the stress-strain curves for the porous metal. Powder metallurgical molybdenum exhibits closed porosity after consolidation due to sintering with nearly spherical shaped pores. The experimental results show that the densification, especially during the first stage of deformation, is different from that of powder compacts or partially consolidated powder materials with open porosity. During hot upsetting, the pores change their size and shape. This behaviour strongly affects the densification rate. For an accurate prediction of the evolution of the density using Gurson's model, the parameters q 1 and q 2 introduced by Tvergaard, will be defined as internal variables. The use of internal variables is justified by the fact that the pores change their shape during deformation, although the link between the internal variables and the pore shape is not explicitly established in this paper. If the loading is proportional (which means that the ratio of the stress-components does not change with plastic strain), the pore shape can be associated with the applied plastic strain. With this association the parameters q i can be defined as a function from the invariant quantity equivalent plastic strain, which can be used as the internal variable in the finite element simulation. The influence of the porosity on the flow stress at different levels of plastic strain will also be investigated and is used as a second information to fit both parameters q 1 and q 2 . (orig.)

Probabilistic analysis of external events with focus on the Fukushima event

International Nuclear Information System (INIS)

Kollasko, Heiko; Jockenhoevel-Barttfeld, Mariana; Klapp, Ulrich

2014-01-01

External hazards are those natural or man-made hazards to a site and facilities that are originated externally to both the site and its processes, i.e. the duty holder may have very little or no control over the hazard. External hazards can have the potential of causing initiating events at the plant, typically transients like e.g., loss of offsite power. Simultaneously, external events may affect safety systems required to control the initiating event and, where applicable, also back-up systems implemented for risk-reduction. The plant safety may especially be threatened when loads from external hazards exceed the load assumptions considered in the design of safety-related systems, structures and components. Another potential threat is given by hazards inducing initiating events not considered in the safety demonstration otherwise. An example is loss of offsite power combined with prolonged plant isolation. Offsite support, e.g., delivery of diesel fuel oil, usually credited in the deterministic safety analysis may not be possible in this case. As the Fukushima events have shown, the biggest threat is likely given by hazards inducing both effects. Such hazards may well be dominant risk contributors even if their return period is very high. In order to identify relevant external hazards for a certain Nuclear Power Plant (NPP) location, a site specific screening analysis is performed, both for single events and for combinations of external events. As a result of the screening analysis, risk significant and therefore relevant (screened-in) single external events and combinations of them are identified for a site. The screened-in events are further considered in a detailed event tree analysis in the frame of the Probabilistic Safety Analysis (PSA) to calculate the core damage/large release frequency resulting from each relevant external event or from each relevant combination. Screening analyses of external events performed at AREVA are based on the approach provided

The development of symptoms-oriented operating procedures

International Nuclear Information System (INIS)

Colquhoun, R.

1983-04-01

Until recently the formal treatment of control room procedures for nuclear power plant upset conditions has been event-oriented. The demise of Three Mile Island, Unit 2, caused the American industry to recognize the pitfalls inherent in relying totally on event-oriented procedures, and led to the initiation of a program for the development of a symptoms-oriented approach for handling upset conditions. The U.S. program has been independently paralleled by a Canadian program. This paper describes the development of the Canadian symptoms-oriented philosophy and identifies the relevance of a generic symptoms based emergency procedure to current operating practices

Kinetic modelling of hydrocracking catalytic reactions by the single events theory; Modelisation cinetique des reactions catalytiques d`hydrocraquage par la theorie des evenements constitutifs

Energy Technology Data Exchange (ETDEWEB)

Schweitzer, J.M.

1998-11-23

Kinetic modelling of petroleum hydrocracking is particularly difficult given the complexity of the feedstocks. There are two distinct classes of kinetics models: lumped empirical models and detailed molecular models. The productivity of lumped empirical models is generally not very accurate, and the number of kinetic parameters increases rapidly with the number of lumps. A promising new methodology is the use of kinetic modelling based on the single events theory. Due to the molecular approach, a finite and limited number of kinetic parameters can describe the kinetic behaviour of the hydrocracking of heavy feedstock. The parameters are independent of the feedstock. However, the available analytical methods are not able to identify the products on the molecular level. This can be accounted for by means of an posteriori lamping technique, which incorporates the detailed knowledge of the elementary step network. Thus, the lumped kinetic parameters are directly calculated from the fundamental kinetic coefficients and the single event model is reduced to a re-lumped molecular model. Until now, the ability of the method to extrapolate to higher carbon numbers had not been demonstrated. In addition, no study had been published for three phase (gas-liquid-solid) systems and a complex feedstock. The objective of this work is to validate the `single events` method using a paraffinic feedstock. First of all, a series of experiments was conducted on a model compound (hexadecane) in order to estimate the fundamental kinetic parameters for acyclic molecules. To validate the single event approach, these estimated kinetic coefficients were used to simulate hydrocracking of a paraffinic mixture ranging from C11 to C18. The simulation results were then compared to the results obtained from the hydrocracking experiments. The comparison allowed to validate the model for acyclic molecules and to demonstrate that the model is applicable to compounds with higher carbon numbers. (author

Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator

Energy Technology Data Exchange (ETDEWEB)

Bakerenkov, A.S., E-mail: as_bakerenkov@list.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Belyakov, V.V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Kozyukov, A.E. [Joint-Stock Company Institute of Space Device Engineering (JSC ISDE), Moscow (Russian Federation); Pershenkov, V.S.; Solomatin, A.V.; Shurenkov, V.V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation)

2015-02-11

The temperature control system for the study of single event disruptions produced by hard ion impacts in integrated circuits is described. Heating and cooling of the irradiated device are achieved using thermoelectric modules (Peltier modules). The thermodynamic performance of the system is estimated. The technique for the numerical estimation of the main parameters of the temperature control system for cooling and heating is considered. The results of a test of the system in a vacuum cell of an accelerator are presented.

Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator

International Nuclear Information System (INIS)

Bakerenkov, A.S.; Belyakov, V.V.; Kozyukov, A.E.; Pershenkov, V.S.; Solomatin, A.V.; Shurenkov, V.V.

2015-01-01

The temperature control system for the study of single event disruptions produced by hard ion impacts in integrated circuits is described. Heating and cooling of the irradiated device are achieved using thermoelectric modules (Peltier modules). The thermodynamic performance of the system is estimated. The technique for the numerical estimation of the main parameters of the temperature control system for cooling and heating is considered. The results of a test of the system in a vacuum cell of an accelerator are presented

Event shape analysis in ultrarelativistic nuclear collisions

OpenAIRE

Kopecna, Renata; Tomasik, Boris

2016-01-01

We present a novel method for sorting events. So far, single variables like flow vector magnitude were used for sorting events. Our approach takes into account the whole azimuthal angle distribution rather than a single variable. This method allows us to determine the good measure of the event shape, providing a multiplicity-independent insight. We discuss the advantages and disadvantages of this approach, the possible usage in femtoscopy, and other more exclusive experimental studies.

WINHAC - the Monte Carlo event generator for single W-boson production in hadronic collisions

International Nuclear Information System (INIS)

Placzek, W.; Jadach, P.

2009-01-01

The charged-current Drell-Yan process, i.e. single W-boson production with leptonic decays in hadronic collisions, will play an important role in the experimental programme at the LHC. It will be used for improved measurements of some Standard Model parameters (such as the W-boson mass and widths, etc.), for better determination of the Higgs-boson mass limits, in '' new physics '' searches, as a '' standard candle '' process, etc. In order to achieve all these goals, precise theoretical predictions for this process in terms of a Monte Carlo event generator are indispensable. In this talk the Monte Carlo event generator WINHAC for the charged-current Drell-Yan process will be presented. It features higher-order QED corrections within the exclusive Yennie-Frautschi-Suura exponentiation scheme with the 1 st order electroweak corrections. It is interfaced with PYTHIA for QCD/QED initial-state parton shower as well as hadronization. It includes options for proton-proton, proton-antiproton and nucleus-nucleus collisions. Moreover, it allows for longitudinally and transversely polarized W-boson production. It has been cross-checked numerically to high precision against independent programs/calculations. Some numerical results from WINHAC will also be presented. Finally, interplay between QCD and electroweak effects will briefly be discussed. (author)

SEU immune ICs for project Galileo

International Nuclear Information System (INIS)

Giddings, A.E.; Hewlett, F.W.; Treece, R.K.; Nichols, D.K.; Smith, L.S.; Zoutendyk, J.A.

1985-01-01

Tests showed that bipolar chips in the attitude control computer of the Galileo spacecraft would likely cause catastrophic mission failure due to single particle upset. This paper describes the design and testing of CMOS replacements which are speed compatible with the bipolar parts and are immune to upset by 165-MeV krypton ions

Measurement of the top quark mass using single top quark events in proton-proton collisions at [Formula: see text] TeV.

Science.gov (United States)

Sirunyan, A M; Tumasyan, A; Adam, W; Asilar, E; Bergauer, T; Brandstetter, J; Brondolin, E; Dragicevic, M; Erö, J; Flechl, M; Friedl, M; Frühwirth, R; Ghete, V M; Hartl, C; Hörmann, N; Hrubec, J; Jeitler, M; König, A; Krätschmer, I; Liko, D; Matsushita, T; Mikulec, I; Rabady, D; Rad, N; Rahbaran, B; Rohringer, H; Schieck, J; Strauss, J; Waltenberger, W; Wulz, C-E; Dvornikov, O; Makarenko, V; Mossolov, V; Gonzalez, J Suarez; Zykunov, V; Shumeiko, N; Alderweireldt, S; De Wolf, E A; Janssen, X; Lauwers, J; Van De Klundert, M; Van Haevermaet, H; Van Mechelen, P; Van Remortel, N; Van Spilbeeck, A; Abu Zeid, S; Blekman, F; D'Hondt, J; Daci, N; De Bruyn, I; Deroover, K; Lowette, S; Moortgat, S; Moreels, L; Olbrechts, A; Python, Q; Skovpen, K; Tavernier, S; Van Doninck, W; Van Mulders, P; Van Parijs, I; Brun, H; Clerbaux, B; De Lentdecker, G; Delannoy, H; Fasanella, G; Favart, L; Goldouzian, R; Grebenyuk, A; Karapostoli, G; Lenzi, T; Léonard, A; Luetic, J; Maerschalk, T; Marinov, A; Randle-Conde, A; Seva, T; Vander Velde, C; Vanlaer, P; Vannerom, D; Yonamine, R; Zenoni, F; Zhang, F; Cimmino, A; Cornelis, T; Dobur, D; Fagot, A; Gul, M; Khvastunov, I; Poyraz, D; Salva, S; Schöfbeck, R; Tytgat, M; Van Driessche, W; Yazgan, E; Zaganidis, N; Bakhshiansohi, H; Beluffi, C; Bondu, O; Brochet, S; Bruno, G; Caudron, A; De Visscher, S; Delaere, C; Delcourt, M; Francois, B; Giammanco, A; Jafari, A; Komm, M; Krintiras, G; Lemaitre, V; Magitteri, A; Mertens, A; Musich, M; Piotrzkowski, K; Quertenmont, L; Selvaggi, M; Marono, M Vidal; Wertz, S; Beliy, N; Aldá Júnior, W L; Alves, F L; Alves, G A; Brito, L; Hensel, C; Moraes, A; Pol, M E; Rebello Teles, P; Belchior Batista Das Chagas, E; Carvalho, W; Chinellato, J; Custódio, A; Da Costa, E M; Da Silveira, G G; De Jesus Damiao, D; De Oliveira Martins, C; Fonseca De Souza, S; Huertas Guativa, L M; Malbouisson, H; Matos Figueiredo, D; Mora Herrera, C; Mundim, L; Nogima, H; Prado Da Silva, W L; Santoro, A; Sznajder, A; Tonelli Manganote, E J; Torres Da Silva De Araujo, F; Vilela Pereira, A; Ahuja, S; Bernardes, C A; Dogra, S; Fernandez Perez Tomei, T R; Gregores, E M; Mercadante, P G; Moon, C S; Novaes, S F; Padula, Sandra S; Romero Abad, D; Ruiz Vargas, J C; Aleksandrov, A; Hadjiiska, R; Iaydjiev, P; Rodozov, M; Stoykova, S; Sultanov, G; Vutova, M; Dimitrov, A; Glushkov, I; Litov, L; Pavlov, B; Petkov, P; Fang, W; Ahmad, M; Bian, J G; Chen, G M; Chen, H S; Chen, M; Chen, Y; Cheng, T; Jiang, C H; Leggat, D; Liu, Z; Romeo, F; Ruan, M; Shaheen, S M; Spiezia, A; Tao, J; Wang, C; Wang, Z; Zhang, H; Zhao, J; Ban, Y; Chen, G; Li, Q; Liu, S; Mao, Y; Qian, S J; Wang, D; Xu, Z; Avila, C; Cabrera, A; Chaparro Sierra, L F; Florez, C; Gomez, J P; González Hernández, C F; Ruiz Alvarez, J D; Sanabria, J C; Godinovic, N; Lelas, D; Puljak, I; Ribeiro Cipriano, P M; Sculac, T; Antunovic, Z; Kovac, M; Brigljevic, V; Ferencek, D; Kadija, K; Mesic, B; Susa, T; Attikis, A; Mavromanolakis, G; Mousa, J; Nicolaou, C; Ptochos, F; Razis, P A; Rykaczewski, H; Tsiakkouri, D; Finger, M; Finger, M; Carrera Jarrin, E; El-Khateeb, E; Elgammal, S; Mohamed, A; Kadastik, M; Perrini, L; Raidal, M; Tiko, A; Veelken, C; Eerola, P; Pekkanen, J; Voutilainen, M; Härkönen, J; Järvinen, T; Karimäki, V; Kinnunen, R; Lampén, T; Lassila-Perini, K; Lehti, S; Lindén, T; Luukka, P; Tuominiemi, J; Tuovinen, E; Wendland, L; Talvitie, J; Tuuva, T; Besancon, M; Couderc, F; Dejardin, M; Denegri, D; Fabbro, B; Faure, J L; Favaro, C; Ferri, F; Ganjour, S; Ghosh, S; Givernaud, A; Gras, P; Hamel de Monchenault, G; Jarry, P; Kucher, I; Locci, E; Machet, M; Malcles, J; Rander, J; Rosowsky, A; Titov, M; Abdulsalam, A; Antropov, I; Baffioni, S; Beaudette, F; Busson, P; Cadamuro, L; Chapon, E; Charlot, C; Davignon, O; Granier de Cassagnac, R; Jo, M; Lisniak, S; Miné, P; Nguyen, M; Ochando, C; Ortona, G; Paganini, P; Pigard, P; Regnard, S; Salerno, R; Sirois, Y; Stahl Leiton, A G; Strebler, T; Yilmaz, Y; Zabi, A; Zghiche, A; Agram, J-L; Andrea, J; Aubin, A; Bloch, D; Brom, J-M; Buttignol, M; Chabert, E C; Chanon, N; Collard, C; Conte, E; Coubez, X; Fontaine, J-C; Gelé, D; Goerlach, U; Le Bihan, A-C; Van Hove, P; Gadrat, S; Beauceron, S; Bernet, C; Boudoul, G; Carrillo Montoya, C A; Chierici, R; Contardo, D; Courbon, B; Depasse, P; Mamouni, H El; Fay, J; Gascon, S; Gouzevitch, M; Grenier, G; Ille, B; Lagarde, F; Laktineh, I B; Lethuillier, M; Mirabito, L; Pequegnot, A L; Perries, S; Popov, A; Sabes, D; Sordini, V; Vander Donckt, M; Verdier, P; Viret, S; Khvedelidze, A; Tsamalaidze, Z; Autermann, C; Beranek, S; Feld, L; Kiesel, M K; Klein, K; Lipinski, M; Preuten, M; Schomakers, C; Schulz, J; Verlage, T; Albert, A; Brodski, M; Dietz-Laursonn, E; Duchardt, D; Endres, M; Erdmann, M; Erdweg, S; Esch, T; Fischer, R; Güth, A; Hamer, M; Hebbeker, T; Heidemann, C; Hoepfner, K; Knutzen, S; Merschmeyer, M; Meyer, A; Millet, P; Mukherjee, S; Olschewski, M; Padeken, K; Pook, T; Radziej, M; Reithler, H; Rieger, M; Scheuch, F; Sonnenschein, L; Teyssier, D; Thüer, S; Cherepanov, V; Flügge, G; Kargoll, B; Kress, T; Künsken, A; Lingemann, J; Müller, T; Nehrkorn, A; Nowack, A; Pistone, C; Pooth, O; Stahl, A; Aldaya Martin, M; Arndt, T; Asawatangtrakuldee, C; Beernaert, K; Behnke, O; Behrens, U; Bin Anuar, A A; Borras, K; Campbell, A; Connor, P; Contreras-Campana, C; Costanza, F; Diez Pardos, C; Dolinska, G; Eckerlin, G; Eckstein, D; Eichhorn, T; Eren, E; Gallo, E; Garay Garcia, J; Geiser, A; Gizhko, A; Grados Luyando, J M; Grohsjean, A; Gunnellini, P; Harb, A; Hauk, J; Hempel, M; Jung, H; Kalogeropoulos, A; Karacheban, O; Kasemann, M; Keaveney, J; Kleinwort, C; Korol, I; Krücker, D; Lange, W; Lelek, A; Lenz, T; Leonard, J; Lipka, K; Lobanov, A; Lohmann, W; Mankel, R; Melzer-Pellmann, I-A; Meyer, A B; Mittag, G; Mnich, J; Mussgiller, A; Pitzl, D; Placakyte, R; Raspereza, A; Roland, B; Sahin, M Ö; Saxena, P; Schoerner-Sadenius, T; Spannagel, S; Stefaniuk, N; Van Onsem, G P; Walsh, R; Wissing, C; Blobel, V; Centis Vignali, M; Draeger, A R; Dreyer, T; Garutti, E; Gonzalez, D; Haller, J; Hoffmann, M; Junkes, A; Klanner, R; Kogler, R; Kovalchuk, N; Lapsien, T; Marchesini, I; Marconi, D; Meyer, M; Niedziela, M; Nowatschin, D; Pantaleo, F; Peiffer, T; Perieanu, A; Scharf, C; Schleper, P; Schmidt, A; Schumann, S; Schwandt, J; Stadie, H; Steinbrück, G; Stober, F M; Stöver, M; Tholen, H; Troendle, D; Usai, E; Vanelderen, L; Vanhoefer, A; Vormwald, B; Akbiyik, M; Barth, C; Baur, S; Baus, C; Berger, J; Butz, E; Caspart, R; Chwalek, T; Colombo, F; De Boer, W; Dierlamm, A; Fink, S; Freund, B; Friese, R; Giffels, M; Gilbert, A; Goldenzweig, P; Haitz, D; Hartmann, F; Heindl, S M; Husemann, U; Katkov, I; Kudella, S; Mildner, H; Mozer, M U; Müller, Th; Plagge, M; Quast, G; Rabbertz, K; Röcker, S; Roscher, F; Schröder, M; Shvetsov, I; Sieber, G; Simonis, H J; Ulrich, R; Wayand, S; Weber, M; Weiler, T; Williamson, S; Wöhrmann, C; Wolf, R; Anagnostou, G; Daskalakis, G; Geralis, T; Giakoumopoulou, V A; Kyriakis, A; Loukas, D; Topsis-Giotis, I; Kesisoglou, S; Panagiotou, A; Saoulidou, N; Tziaferi, E; 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Baty, A; Bi, R; Bierwagen, K; Brandt, S; Busza, W; Cali, I A; D'Alfonso, M; Demiragli, Z; Gomez Ceballos, G; Goncharov, M; Hsu, D; Iiyama, Y; Innocenti, G M; Klute, M; Kovalskyi, D; Krajczar, K; Lai, Y S; Lee, Y-J; Levin, A; Luckey, P D; Maier, B; Marini, A C; Mcginn, C; Mironov, C; Narayanan, S; Niu, X; Paus, C; Roland, C; Roland, G; Salfeld-Nebgen, J; Stephans, G S F; Tatar, K; Velicanu, D; Wang, J; Wang, T W; Wyslouch, B; Benvenuti, A C; Chatterjee, R M; Evans, A; Hansen, P; Kalafut, S; Kao, S C; Kubota, Y; Lesko, Z; Mans, J; Nourbakhsh, S; Ruckstuhl, N; Rusack, R; Tambe, N; Turkewitz, J; Acosta, J G; Oliveros, S; Avdeeva, E; Bloom, K; Claes, D R; Fangmeier, C; Gonzalez Suarez, R; Kamalieddin, R; Kravchenko, I; Malta Rodrigues, A; Monroy, J; Siado, J E; Snow, G R; Stieger, B; Alyari, M; Dolen, J; Godshalk, A; Harrington, C; Iashvili, I; Kaisen, J; Nguyen, D; Parker, A; Rappoccio, S; Roozbahani, B; Alverson, G; Barberis, E; Hortiangtham, A; Massironi, A; Morse, D M; Nash, D; Orimoto, T; Teixeira De Lima, R; Trocino, D; Wang, R-J; Wood, D; Bhattacharya, S; Charaf, O; Hahn, K A; Kumar, A; Mucia, N; Odell, N; Pollack, B; Schmitt, M H; Sung, K; Trovato, M; Velasco, M; Dev, N; Hildreth, M; Hurtado Anampa, K; Jessop, C; Karmgard, D J; Kellams, N; Lannon, K; Marinelli, N; Meng, F; Mueller, C; Musienko, Y; Planer, M; Reinsvold, A; Ruchti, R; Rupprecht, N; Smith, G; Taroni, S; Wayne, M; Wolf, M; Woodard, A; Alimena, J; Antonelli, L; Bylsma, B; Durkin, L S; Flowers, S; Francis, B; Hart, A; Hill, C; Hughes, R; Ji, W; Liu, B; Luo, W; Puigh, D; Winer, B L; Wulsin, H W; Cooperstein, S; Driga, O; Elmer, P; Hardenbrook, J; Hebda, P; Lange, D; Luo, J; Marlow, D; Medvedeva, T; Mei, K; Ojalvo, I; Olsen, J; Palmer, C; Piroué, P; Stickland, D; Svyatkovskiy, A; Tully, C; Malik, S; Barker, A; Barnes, V E; Folgueras, S; Gutay, L; Jha, M K; Jones, M; Jung, A W; Khatiwada, A; Miller, D H; Neumeister, N; Schulte, J F; Shi, X; Sun, J; Wang, F; Xie, W; Parashar, N; Stupak, J; Adair, A; Akgun, B; Chen, Z; Ecklund, K M; Geurts, F J M; Guilbaud, M; Li, W; Michlin, B; Northup, M; Padley, B P; Roberts, J; Rorie, J; Tu, Z; Zabel, J; Betchart, B; Bodek, A; de Barbaro, P; Demina, R; Duh, Y T; Ferbel, T; Galanti, M; Garcia-Bellido, A; Han, J; Hindrichs, O; Khukhunaishvili, A; Lo, K H; Tan, P; Verzetti, M; Agapitos, A; Chou, J P; Gershtein, Y; Gómez Espinosa, T A; Halkiadakis, E; Heindl, M; Hughes, E; Kaplan, S; Kunnawalkam Elayavalli, R; Kyriacou, S; Lath, A; Nash, K; Osherson, M; Saka, H; Salur, S; Schnetzer, S; Sheffield, D; Somalwar, S; Stone, R; Thomas, S; Thomassen, P; Walker, M; Delannoy, A G; Foerster, M; Heideman, J; Riley, G; Rose, K; Spanier, S; Thapa, K; Bouhali, O; Celik, A; Dalchenko, M; De Mattia, M; Delgado, A; Dildick, S; Eusebi, R; Gilmore, J; Huang, T; Juska, E; Kamon, T; Mueller, R; Pakhotin, Y; Patel, R; Perloff, A; Perniè, L; Rathjens, D; Safonov, A; Tatarinov, A; Ulmer, K A; Akchurin, N; Cowden, C; Damgov, J; De Guio, F; Dragoiu, C; Dudero, P R; Faulkner, J; Gurpinar, E; Kunori, S; Lamichhane, K; Lee, S W; Libeiro, T; Peltola, T; Undleeb, S; Volobouev, I; Wang, Z; Greene, S; Gurrola, A; Janjam, R; Johns, W; Maguire, C; Melo, A; Ni, H; Sheldon, P; Tuo, S; Velkovska, J; Xu, Q; Arenton, M W; Barria, P; Cox, B; Goodell, J; Hirosky, R; Ledovskoy, A; Li, H; Neu, C; Sinthuprasith, T; Sun, X; Wang, Y; Wolfe, E; Xia, F; Clarke, C; Harr, R; Karchin, P E; Sturdy, J; Belknap, D A; Buchanan, J; Caillol, C; Dasu, S; Dodd, L; Duric, S; Gomber, B; Grothe, M; Herndon, M; Hervé, A; Klabbers, P; Lanaro, A; Levine, A; Long, K; Loveless, R; Perry, T; Pierro, G A; Polese, G; Ruggles, T; Savin, A; Smith, N; Smith, W H; Taylor, D; Woods, N

2017-01-01

A measurement of the top quark mass is reported in events containing a single top quark produced via the electroweak t channel. The analysis is performed using data from proton-proton collisions collected with the CMS detector at the LHC at a centre-of-mass energy of 8 TeV, corresponding to an integrated luminosity of 19.7 fb[Formula: see text]. Top quark candidates are reconstructed from their decay to a [Formula: see text] boson and a b quark, with the [Formula: see text] boson decaying leptonically to a muon and a neutrino. The final state signature and kinematic properties of single top quark events in the t channel are used to enhance the purity of the sample, suppressing the contribution from top quark pair production. A fit to the invariant mass distribution of reconstructed top quark candidates yields a value of the top quark mass of [Formula: see text]. This result is in agreement with the current world average, and represents the first measurement of the top quark mass in event topologies not dominated by top quark pair production, therefore contributing to future averages with partially uncorrelated systematic uncertainties and a largely uncorrelated statistical uncertainty.

Widespread Amazon forest tree mortality from a single cross-basin squall line event

Science.gov (United States)

Negrón-Juárez, Robinson I.; Chambers, Jeffrey Q.; Guimaraes, Giuliano; Zeng, Hongcheng; Raupp, Carlos F. M.; Marra, Daniel M.; Ribeiro, Gabriel H. P. M.; Saatchi, Sassan S.; Nelson, Bruce W.; Higuchi, Niro

2010-08-01

Climate change is expected to increase the intensity of extreme precipitation events in Amazonia that in turn might produce more forest blowdowns associated with convective storms. Yet quantitative tree mortality associated with convective storms has never been reported across Amazonia, representing an important additional source of carbon to the atmosphere. Here we demonstrate that a single squall line (aligned cluster of convective storm cells) propagating across Amazonia in January, 2005, caused widespread forest tree mortality and may have contributed to the elevated mortality observed that year. Forest plot data demonstrated that the same year represented the second highest mortality rate over a 15-year annual monitoring interval. Over the Manaus region, disturbed forest patches generated by the squall followed a power-law distribution (scaling exponent α = 1.48) and produced a mortality of 0.3-0.5 million trees, equivalent to 30% of the observed annual deforestation reported in 2005 over the same area. Basin-wide, potential tree mortality from this one event was estimated at 542 ± 121 million trees, equivalent to 23% of the mean annual biomass accumulation estimated for these forests. Our results highlight the vulnerability of Amazon trees to wind-driven mortality associated with convective storms. Storm intensity is expected to increase with a warming climate, which would result in additional tree mortality and carbon release to the atmosphere, with the potential to further warm the climate system.

Comparison of circadian, weekly, and seasonal variations of electrical storms and single events of ventricular fibrillation in patients with Brugada syndrome

Directory of Open Access Journals (Sweden)

Yoshiyasu Aizawa

2016-06-01

Full Text Available In patients with Brugada syndrome (BS, VF occurred predominantly during the nocturnal period. Some patients also developed ESs. In addition to the circadian rhythm, patients showed weekly and seasonal patterns. The patients with ESs had peak episodes of VF on Saturday and in the winter and spring, while episodes of VF in patients with single VF events occurred most often on Monday with smaller seasonal variation. Except for age, there was no difference in the clinical or ECG characteristics between the patients with ESs and those with single VF episodes.

Compendium of Single Event Effects Test Results for Commercial Off-The-Shelf and Standard Electronics for Low Earth Orbit and Deep Space Applications

Science.gov (United States)

Reddell, Brandon D.; Bailey, Charles R.; Nguyen, Kyson V.; O'Neill, Patrick M.; Wheeler, Scott; Gaza, Razvan; Cooper, Jaime; Kalb, Theodore; Patel, Chirag; Beach, Elden R.;

Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator

Science.gov (United States)

Aguiar, V. A. P.; Added, N.; Medina, N. H.; Macchione, E. L. A.; Tabacniks, M. H.; Aguirre, F. R.; Silveira, M. A. G.; Santos, R. B. B.; Seixas, L. E.

2014-08-01

In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic scattering collisions to achieve a low-flux with a high-uniformity ion beam to irradiate several devices. 12C, 16O, 28Si, 35Cl and 63Cu beams were used to test the experimental setup. In this system it is possible to use efficiently LET values of 17 MeV/mg/cm2 for an external beam arrangement and up to 32 MeV/mg/cm2 for in-vacuum irradiation.

Single and multi-photon events with missing energy in $e^+ e^-$ collisions at 161 GeV < $\\sqrt{s}$ < 172 GeV

CERN Document Server

Acciarri, M; Aguilar-Benítez, M; Ahlen, S P; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alverson, G; Alviggi, M G; Ambrosi, G; Anderhub, H; Andreev, V P; Angelescu, T; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Baksay, L; Banerjee, S; Banerjee, Sw; Banicz, K; Barczyk, A; Barillère, R; Barone, L; Bartalini, P; Baschirotto, A; Basile, M; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Bhattacharya, S; Biasini, M; Biland, A; Bilei, G M; Blaising, J J; Blyth, S C; Bobbink, Gerjan J; Böck, R K; Böhm, A; Boldizsar, L; Borgia, B; Bourilkov, D; Bourquin, Maurice; Braccini, S; Branson, J G; Brigljevic, V; Brock, I C; Buffini, A; Buijs, A; Burger, J D; Burger, W J; Busenitz, J K; Button, A M; Cai, X D; Campanelli, M; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A M; Casaus, J; Castellini, G; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada-Canales, M; Cesaroni, F; Chamizo-Llatas, M; Chang, Y H; Chaturvedi, U K; Chekanov, S V; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chéreau, X J; Chiefari, G; Chien, C Y; Cifarelli, Luisa; Cindolo, F; Civinini, C; Clare, I; Clare, R; Cohn, H O; Coignet, G; Colijn, A P; Colino, N; Commichau, V; Costantini, S; Cotorobai, F; de la Cruz, B; Csilling, Akos; Dai, T S; D'Alessandro, R; De Asmundis, R; Degré, A; Deiters, K; Della Volpe, D; Denes, P; De Notaristefani, F; DiBitonto, Daryl; Diemoz, M; Van Dierendonck, D N; Di Lodovico, F; Dionisi, C; Dittmar, Michael; Dominguez, A; Doria, A; Dova, M T; Duchesneau, D; Duinker, P; Durán, I; Dutta, S; Easo, S; Efremenko, Yu V; El-Mamouni, H; Engler, A; Eppling, F J; Erné, F C; Ernenwein, J P; Extermann, Pierre; Fabre, M; Faccini, R; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, Marta; Fenyi, B; Ferguson, T; Ferroni, F; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, Frank; Fisher, P H; Fisk, I; Forconi, G; Fredj, L; Freudenreich, Klaus; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gau, S S; Gentile, S; Gheordanescu, N; Giagu, S; Goldfarb, S; Goldstein, J; Gong, Z F; Gougas, Andreas; Gratta, Giorgio; Grünewald, M W; Gupta, V K; Gurtu, A; Gutay, L J; Hartmann, B; Hasan, A; Hatzifotiadou, D; Hebbeker, T; Hervé, A; Van Hoek, W C; Hofer, H; Hong, S J; Hoorani, H; Hou, S R; Hu, G; Innocente, Vincenzo; Jenkes, K; Jin, B N; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kasser, A; Khan, R A; Kamrad, D; Kamyshkov, Yu A; Kapustinsky, J S; Karyotakis, Yu; Kaur, M; Kienzle-Focacci, M N; Kim, D; Kim, D H; Kim, J K; Kim, S C; Kim, Y G; Kinnison, W W; Kirkby, A; Kirkby, D; Kirkby, Jasper; Kiss, D; Kittel, E W; Klimentov, A; König, A C; Kopp, A; Korolko, I; Koutsenko, V F; Krämer, R W; Krenz, W; Kunin, A; Ladrón de Guevara, P; Laktineh, I; Landi, G; Lapoint, C; Lassila-Perini, K M; Laurikainen, P; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Le Goff, J M; Leiste, R; Leonardi, E; Levchenko, P M; Li Chuan; Lin, C H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lu, W; Lü, Y S; Lübelsmeyer, K; Luci, C; Luckey, D; Luminari, L; Lustermann, W; Ma Wen Gan; Maity, M; Majumder, G; Malgeri, L; Malinin, A; Maña, C; Mangeol, D J J; Mangla, S; Marchesini, P A; Marin, A; Martin, J P; Marzano, F; Massaro, G G G; McNally, D; McNeil, R R; Mele, S; Merola, L; Meschini, M; Metzger, W J; Von der Mey, M; Mi, Y; Mihul, A; Van Mil, A J W; Mirabelli, G; Mnich, J; Molnár, P; Monteleoni, B; Moore, R; Morganti, S; Moulik, T; Mount, R; Müller, S; Muheim, F; Muijs, A J M; Nahn, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Niessen, T; Nippe, A; Nisati, A; Nowak, H; Oh, Yu D; Opitz, H; Organtini, G; Ostonen, R; Palomares, C; Pandoulas, D; Paoletti, S; Paolucci, P; Park, H K; Park, I H; Pascale, G; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Peach, D; Pei, Y J; Pensotti, S; Perret-Gallix, D; Petersen, B; Petrak, S; Pevsner, A; Piccolo, D; Pieri, M; Pinto, J C; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Postema, H; Produit, N; Prokofev, D; Prokofiev, D O; Rahal-Callot, G; Raja, N; Rancoita, P G; Rattaggi, M; Raven, G; Razis, P A; Read, K; Ren, D; Rescigno, M; Reucroft, S; Van Rhee, T; Riemann, S; Riles, K; Robohm, A; Rodin, J; Roe, B P; Romero, L; Rosier-Lees, S; Rosselet, P; Van Rossum, W; Roth, S; Rubio, Juan Antonio; Ruschmeier, D; Rykaczewski, H; Salicio, J; Sánchez, E; Sanders, M P; Sarakinos, M E; Sarkar, S; Sassowsky, M; Schäfer, C; Shchegelskii, V; Schmidt-Kärst, S; Schmitz, D; Schmitz, P; Scholz, N; Schopper, Herwig Franz; Schotanus, D J; Schwenke, J; Schwering, G; Sciacca, C; Sciarrino, D; Servoli, L; Shevchenko, S; Shivarov, N; Shoutko, V; Shukla, J; Shumilov, E; Shvorob, A V; Siedenburg, T; Son, D; Sopczak, André; Smith, B; Spillantini, P; Steuer, M; Stickland, D P; Stone, A; Stone, H; Stoyanov, B; Strässner, A; Strauch, K; Sudhakar, K; Sultanov, G G; Sun, L Z; Susinno, G F; Suter, H; Swain, J D; Tang, X W; Tauscher, Ludwig; Taylor, L; Ting, Samuel C C; Ting, S M; Tonutti, M; Tonwar, S C; Tóth, J; Tully, C; Tuchscherer, H; Tung, K L; Uchida, Y; Ulbricht, J; Uwer, U; Valente, E; Van de Walle, R T; Vesztergombi, G; Vetlitskii, I; Viertel, Gert M; Vivargent, M; Völkert, R; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Vorvolakos, A; Wadhwa, M; Wallraff, W; Wang, J C; Wang, X L; Wang, Z M; Weber, A; Wittgenstein, F; Wu, S X; Wynhoff, S; Xu, J; Xu, Z Z; Yang, B Z; Yang, C G; Yao, X Y; Ye, J B; Yeh, S C; You, J M; Zalite, A; Zalite, Yu; Zemp, P; Zeng, Y; Zhang, Z; Zhang, Z P; Zhou, B; Zhu, G Y; Zhu, R Y; Zichichi, Antonino; Ziegler, F

1997-01-01

A search for single and multi-photon events with missing energy is performed using data collected at centre-of-mass energies between 161 GeV and 172 GeV for a total of 20.9 pb$^{-1}$ of integrated luminosity. The results obtained are used to derive the value for the $\

Study of single tagged multihadronic γγ* events at A 2> ≅ 12 GeV2/C4

International Nuclear Information System (INIS)

Batyunya, B.; Tyapkin, I.; Todorov, T.

1993-01-01

An analysis of single tagged two photon events was performed in the multihadronic channel. Data corresponding to a 26.0 pb -1 integrated luminosity was compared to a two component model prediction: a generalized Vector meson Dominance Model (VDM) for the non perturbative part and a Quark Parton Model (QPM) describing the perturbative regime. The obtained reasonable agreement between data and MC is the first step before unfolding the data and testing QCD. 16 refs., 13 figs., 1 tab

The application of particle filters in single trial event-related potential estimation

International Nuclear Information System (INIS)

Mohseni, Hamid R; Nazarpour, Kianoush; Sanei, Saeid; Wilding, Edward L

2009-01-01

In this paper, an approach for the estimation of single trial event-related potentials (ST-ERPs) using particle filters (PFs) is presented. The method is based on recursive Bayesian mean square estimation of ERP wavelet coefficients using their previous estimates as prior information. To enable a performance evaluation of the approach in the Gaussian and non-Gaussian distributed noise conditions, we added Gaussian white noise (GWN) and real electroencephalogram (EEG) signals recorded during rest to the simulated ERPs. The results were compared to that of the Kalman filtering (KF) approach demonstrating the robustness of the PF over the KF to the added GWN noise. The proposed method also outperforms the KF when the assumption about the Gaussianity of the noise is violated. We also applied this technique to real EEG potentials recorded in an odd-ball paradigm and investigated the correlation between the amplitude and the latency of the estimated ERP components. Unlike the KF method, for the PF there was a statistically significant negative correlation between amplitude and latency of the estimated ERPs, matching previous neurophysiological findings

Pharmacotherapy for adverse events reduces the length of hospital stay in patients admitted to otolaryngology ward: a single arm intervention study.

Directory of Open Access Journals (Sweden)

Akio Suzuki

Full Text Available To determine whether adverse events extend the duration of hospitalization, and to evaluate the effectiveness of medical intervention in ameliorating adverse events and reducing the prolonged hospital stay associated with adverse events.A single arm intervention study was conducted from October 2012 to March 2014 in the otolaryngology ward of a 614-bed, university-affiliated hospital. Adverse events were monitored daily by physicians, pharmacists and nurses, and recorded in the electronic medical chart for each patient. Appropriate drug management of adverse events was performed by physicians in liaison with pharmacists. The Kaplan-Meier method was used to assess the length of hospitalization of patients who underwent medical intervention for adverse events.Of 571 patients admitted to the otolaryngology ward in a year, 219 patients (38.4% experienced adverse events of grade ≥2. The duration of hospitalization was affected by the grade of adverse events, with a mean duration of hospital stay of 9.2, 17.2, 28.3 and 47.0 days for grades 0, 1, 2, and 3-4, respectively. Medical intervention lowered the incidence of grade ≥2 adverse events to 14.5%. The length of hospitalization was significantly shorter in patients who showed an improvement of adverse events after medical intervention than those who did not (26.4 days vs. 41.6 days, hazard ratio 1.687, 95% confidence interval: 1.260-2.259, P<0.001. A multivariate Cox proportional hazard analysis indicated that insomnia, constipation, nausea/vomiting, infection, non-cancer pain, oral mucositis, odynophagia and neutropenia were significant risk factors for prolongation of hospital stay.Patients who experienced adverse events are at high risk of prolonged hospitalization. Medical intervention for adverse events was found to be effective in reducing the length of hospital stay associated with adverse events.

Development of symptoms-oriented operating procedures

International Nuclear Information System (INIS)

Colquhoun, R.

1984-01-01

Until recently, the formal treatment of control room procedures for upset conditions in nuclear power plants has been event-oriented. This orientation was not so much a reflection of power plant operating practice as it was a reflection of design-oriented thinking - design-basis events, therefore event-oriented procedures. Event orientation is not common in other professions. In the medical profession, for example, the stabilization of vital functions through a symptoms-oriented approach has priority over diagnosis and prognosis. The American nuclear power industry has initiated programs for the development and application of a symptoms-oriented approach for handling upset conditions. Canadian programs have independently paralleled the US programs. This article describes the rationale and current applications of the Canadian programs and identifies the relevance of a generic symptoms-based emergency procedure to current operating practices

Identification of passive shutdown system parameters in a metal fueled LMR

International Nuclear Information System (INIS)

Vilim, R.B.

1992-01-01

This document discusses periodic testing of the passive shutdown system in a metal fueled liquid metal reactor which has been proposed as a Technical Specification requirement. In the approach to testing considered in this paper, perturbation experiments performed at normal operation are used to predict an envelope that bounds reactor response to flowrate, inlet temperature and external reactivity forcing functions. When the envelope for specific upsets lies within safety limits, one concludes that the passive shutdown system is operation properly for those upsets. Simulation results for the EBR-II reactor show that the response envelope for loss of flow and rod reactivity insertion events does indeed bound these events

Measurement of the Inclusive and Fiducial Cross-Section of Single Top-Quark $t$-Channel Events in $pp$ Collisions at $\\sqrt{s}$ = 8 TeV

CERN Document Server

The ATLAS collaboration

2014-01-01

This note presents the measurement of a $t$-channel single top-quark production fiducial cross-section in the lepton+jets channel with 20.3 fb$^{-1}$ of 8 TeV data using a neural-network discriminant. Events are selected by requiring exactly two jets, where one of the jets is required to be $b$-tagged. Signal events from $t$-channel single top-quark processes are enhanced using a neural-network discriminant based on final-state observables. The $t$-channel production cross-section in the fiducial region is obtained from a binned maximum-likelihood fit to the neural-network discriminant. A fiducial cross-section quoted within the detector acceptance of $\\sigma_{\\rm fid} = 3.37 \\pm 0.05 \\, (\\mathrm{stat.}) \\pm 0.47 \\, (\\mathrm{syst.}) \\pm 0.09 \\, (\\mathrm{lumi.})~\\text{pb}$ is obtained. The total inclusive $t$-channel cross-section is calculated using the acceptance predicted by various Monte Carlo generators. If the acceptance from the aMC@NLO+Herwig event generator is used, a value of $\\sigma_t = 82.6 \\pm 1.2...

Single Event Resolution of Plant Plasma Membrane Protein Endocytosis by TIRF Microscopy.

Science.gov (United States)

Johnson, Alexander; Vert, Grégory

2017-01-01

Endocytosis is a key process in the internalization of extracellular materials and plasma membrane proteins, such as receptors and transporters, thereby controlling many aspects of cell signaling and cellular homeostasis. Endocytosis in plants has an essential role not only for basic cellular functions but also for growth and development, nutrient delivery, toxin avoidance, and pathogen defense. The precise mechanisms of endocytosis in plants remain quite elusive. The lack of direct visualization and examination of single events of endocytosis has greatly hampered our ability to precisely monitor the cell surface lifetime and the recruitment profile of proteins driving endocytosis or endocytosed cargos in plants. Here, we discuss the necessity to systematically implement total internal reflection fluorescence microcopy (TIRF) in the Plant Cell Biology community and present reliable protocols for high spatial and temporal imaging of endocytosis in plants using clathrin-mediated endocytosis as a test case, since it represents the major route for internalization of cell-surface proteins in plants. We developed a robust method to directly visualize cell surface proteins using TIRF microscopy combined to a high throughput, automated and unbiased analysis pipeline to determine the temporal recruitment profile of proteins to single sites of endocytosis, using the departure of clathrin as a physiological reference for scission. Using this 'departure assay', we assessed the recruitment of two different AP-2 subunits, alpha and mu, to the sites of endocytosis and found that AP2A1 was recruited in concert with clathrin, while AP2M was not. This validated approach therefore offers a powerful solution to better characterize the plant endocytic machinery and the dynamics of one's favorite cargo protein.

Radiation Fields in High Energy Accelerators and their impact on Single Event Effects

CERN Document Server

García Alía, Rubén; Wrobel, Frédéric; Brugger, Markus

Including calculation models and measurements for a variety of electronic components and their concerned radiation environments, this thesis describes the complex radiation field present in the surrounding of a high-energy hadron accelerator and assesses the risks related to it in terms of Single Event Effects (SEE). It is shown that this poses not only a serious threat to the respective operation of modern accelerators but also highlights the impact on other high-energy radiation environments such as those for ground and avionics applications. Different LHC-like radiation environments are described in terms of their hadron composition and energy spectra. They are compared with other environments relevant for electronic component operation such as the ground-level, avionics or proton belt. The main characteristic of the high-energy accelerator radiation field is its mixed nature, both in terms of hadron types and energy interval. The threat to electronics ranges from neutrons of thermal energies to GeV hadron...

Engaged patients, engaged partnerships: singles and partners dealing with an acute cardiac event.

Science.gov (United States)

Bertoni, Anna; Donato, Silvia; Graffigna, Guendalina; Barello, Serena; Parise, Miriam

2015-01-01

A few studies examine patients' (and partners') individual and relational functioning after an acute cardiac event and no research focuses on the individual and relational factors associated with the patient's engagement in his/her disease management. The present study aimed at exploring these variables in male and female patients as well as their partners. We pursued our objectives by taking advantage of a dyadic research design that involved both partners in the data collection, when present, and by including women patients in the sample. Findings showed that patients in a couple, compared to single patients, perceive that their illness had less serious consequences for their life and they were more engaged in their health care; that patients and partners showed comparable levels of distress; and that less depressed, more confident, and better informed patients were more likely to actively engage in their treatment. Findings are discussed in light of their implications for clinical practice.

Increased reaction time variability in attention-deficit hyperactivity disorder as a response-related phenomenon: evidence from single-trial event-related potentials.

Science.gov (United States)

Saville, Christopher W N; Feige, Bernd; Kluckert, Christian; Bender, Stephan; Biscaldi, Monica; Berger, Andrea; Fleischhaker, Christian; Henighausen, Klaus; Klein, Christoph

2015-07-01

Increased intra-subject variability (ISV) in reaction times (RTs) is a promising endophenotype for attention-deficit hyperactivity disorder (ADHD) and among the most robust hallmarks of the disorder. ISV has been assumed to represent an attentional deficit, either reflecting lapses in attention or increased neural noise. Here, we use an innovative single-trial event-related potential approach to assess whether the increased ISV associated with ADHD is indeed attributable to attention, or whether it is related to response-related processing. We measured electroencephalographic responses to working memory oddball tasks in patients with ADHD (N = 20, aged 11.3 ± 1.1) and healthy controls (N = 25, aged 11.7 ± 1.1), and analysed these data with a recently developed method of single-trial event-related potential analysis. Estimates of component latency variability were computed for the stimulus-locked and response-locked forms of the P3b and the lateralised readiness potential (LRP). ADHD patients showed significantly increased ISV in behavioural ISV. This increased ISV was paralleled by an increase in variability in response-locked event-related potential latencies, while variability in stimulus-locked latencies was equivalent between groups. This result held across the P3b and LRP. Latency of all components predicted RTs on a single-trial basis, confirming that all were relevant for speed of processing. These data suggest that the increased ISV found in ADHD could be associated with response-end, rather than stimulus-end processes, in contrast to prevailing conceptions about the endophenotype. This mental chronometric approach may also be useful for exploring whether the existing lack of specificity of ISV to particular psychiatric conditions can be improved upon. © 2014 Association for Child and Adolescent Mental Health.

Comparison Elements on STG DICE cell for Content-Addressable Memory and Simulation of Single-Event Transients

Directory of Open Access Journals (Sweden)

V. Ya. Stenin

2017-06-01

Full Text Available Comparison elements on base the STG DICE cell and the logical element “Exclusive OR” for a content-addressable memory were designed and simulated. The comparison element contains two identical joint groups of transistors that are spaced on the chip by the distance of four micrometers, so the loss of data in STG DICE cell practically excluded. On the characteristics of the new 65-nm CMOS comparison element, we predict the hardness of these item to single event rate (SER more to hundred times compared to elements on 6-transistors cells and the standard DICE cell with distances 0.5-0.6 μm between mutually sensitive nodes.

Observation of W associated single top (tW) production and search for FCNC in tZ events in proton-proton collisions

CERN Document Server

Benelli, Gabriele

2013-01-01

The first observation of the associated production of a single top quark and a $W$ boson in proton-proton collisions at $\\sqrt{s}$ = 8 TeV with the CMS experiment at the LHC is presented. The data correspond to an integrated luminosity of 12.2 $\\mathrm{fb^{-1}}$. The measurement is performed using events with two leptons and a jet originated from a b quark. A multivariate analysis based on kinematic properties is used to separate the signal from the $t\\bar{t}$ background. The signal is observed with a 6.0 standard deviation excess above a background only hypothesis.A production cross section of $23.4^{+5.5}_{-5.4}$ pb is measured, in agreement with the standard model expectation of $22.2\\pm1.5$ pb.\\\\A study of top-quark anomalous couplings is performed through the search for a single top-quark produced in association with a $Z$ boson. The event selection requires the presence of three isolated leptons, electrons or muons, and of at least one jet. The signal extraction is done using kinematic variables and i...

Study of the hybrid controller electronics for the nano-stabilization of mechanical vibrations of CLIC quadrupoles

International Nuclear Information System (INIS)

Carmona, P Fernandez; Artoos, K; Esposito, M; Guinchard, M; Janssens, S; Kuzmin, A; Ballester, R Moron; Collette, C

2011-01-01

In order to achieve the required levels of luminosity in the CLIC linear collider, mechanical stabilization of quadrupoles to the nanometre level is required. The paper describes a design of hybrid electronics combining an analogue controller and digital communication with the main machine controller. The choice of local analogue control ensures the required low latency while still keeping sufficiently low noise level. Furthermore, it reduces the power consumption, rack space and cost. Sensitivity to radiation single events upsets is reduced compared to a digital controller. The digital part is required for fine tuning and real time monitoring via digitization of critical parameters.

Two transistor cluster DICE Cells with the minimum area for a hardened 28-nm CMOS and 65-nm SRAM layout design

International Nuclear Information System (INIS)

Stenin, V.Ya.; Stepanov, P.V.

2015-01-01

A hardened DICE cell layout design is based on the two spaced transistor clusters of the DICE cell each consisting of four transistors. The larger the distance between these two CMOS transistor clusters, the more robust the hardened DICE SRAM to Single Event Upsets. Some versions of the 28-nm and 65-nm DICE CMOS SRAM block composition have been suggested with minimum cluster distances of 2.27-2.32 mkm. The area of hardened 28-nm DICE CMOS cells is larger than the area of 28-nm 6T CMOS cells by a factor of 2.1 [ru

The Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT PMOS SRAM with DRAM Capacitors

CERN Document Server

Uznanski, Slawosz; Blackmore, Ewart; Brugger, Markus; Gaillard, Remi; Mekki, Julien; Todd, Benjamin; Trinczek, Michael; Vilar Villanueva, Andrea

2014-01-01

Proton experimental data are analyzed for a 16-Mbit Thin-Film-Transistor (TFT) PMOS Static Random Access Memory (SRAM) with DRAM capacitors. The presence of high-Z materials as tungsten causes an unusual increase of the Single Event Upset (SEU) proton cross-section for the energies above 100MeV. Monte-Carlo simulations reproduce the experimentally measured cross-sections up to 480MeV and predict a further increase up to GeV energies. The implications of this increase are analyzed in the context of the LHC and other radiation environments where a significant fraction of the fluence lies above 100MeV.

Study of radiation effects on semiconductor devices

International Nuclear Information System (INIS)

Kuboyama, Satoshi; Shindou, Hiroyuki; Ikeda, Naomi; Iwata, Yoshiyuki; Murakami, Takeshi

2004-01-01

Fine structure of the recent semiconductor devices has made them more sensitive to the space radiation environment with trapped high-energy protons and heavy ions. A new failure mode caused by bulk damage had been reported on such devices with small structure, and its effect on commercial synchronous dynamic random access memory (SDRAMs) was analyzed from the irradiation test results performed at Heavy ion Medical Accelerator in Chiba (HIMAC). Single event upset (SEU) data of static random access memory (SRAMs) were also collected to establish the method of estimating the proton-induced SEU rate from the results of heavy ion irradiation tests. (authors)

Development of a programming model for radiation-resistant software

International Nuclear Information System (INIS)

Eichhorn, G.; Piercey, R.B.

1984-01-01

The adverse effects of ionizing radiation on microelectronic systems include cumulative dosage effects, single-event upsets (SEU's) and latch-up. Most frequent, especially when the radiation environment includes heavy ions, are SEU's. Unfortunately SEU's are difficult to detect since they can be read (in RAM or ROM) as valid addresses. They can however be handled in software by proper techniques. The authors refer to their method as MRS - Maximally Redundant Software. The MRS programming model which the authors are developing uses multiply redundant boot blocks, majority voting, periodic refresh, and error recovery techniques to minimize the deleterious effects of SEU's. 1 figure

FPGA-based Bit-Error-Rate Tester for SEU-hardened Optical Links

CERN Document Server

Detraz, S; Moreira, P; Papadopoulos, S; Papakonstantinou, I; Seif El Nasr, S; Sigaud, C; Soos, C; Stejskal, P; Troska, J; Versmissen, H

2009-01-01

The next generation of optical links for future High-Energy Physics experiments will require components qualified for use in radiation-hard environments. To cope with radiation induced single-event upsets, the physical layer protocol will include Forward Error Correction (FEC). Bit-Error-Rate (BER) testing is a widely used method to characterize digital transmission systems. In order to measure the BER with and without the proposed FEC, simultaneously on several devices, a multi-channel BER tester has been developed. This paper describes the architecture of the tester, its implementation in a Xilinx Virtex-5 FPGA device and discusses the experimental results.

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

Science.gov (United States)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

International Nuclear Information System (INIS)

Jia Yunpeng; Su Hongyuan; Hu Dongqing; Wu Yu; Jin Rui

2016-01-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. (paper)

Thromboembolic events associated with single balloon-, double balloon-, and stent-assisted coil embolization of asymptomatic unruptured cerebral aneurysms: evaluation with diffusion-weighted MR imaging

International Nuclear Information System (INIS)

Takigawa, Tomoji; Suzuki, Kensuke; Sugiura, Yoshiki; Suzuki, Ryotaro; Takano, Issei; Shimizu, Nobuyuki; Tanaka, Yoshihiro; Hyodo, Akio

2014-01-01

The introduction of the balloon remodeling and stent-assisted technique has revolutionized the approach to coil embolization for wide-neck aneurysms. The purpose of this study was to determine the frequency of thromboembolic events associated with single balloon-assisted, double balloon-assisted, and stent-assisted coil embolization for asymptomatic unruptured aneurysms. A retrospective review was undertaken by 119 patients undergoing coiling with an adjunctive technique for unruptured saccular aneurysms (64 single balloon, 12 double balloon, 43 stent assisted). All underwent diffusion-weighted imaging (DWI) within 24 h after the procedure. DWI showed hyperintense lesions in 48 (40 %) patients, and ten (21 %) of these patients incurred neurological deterioration (permanent, two; transient, eight). Hyperintense lesions were detected significantly more often in procedures with the double balloon-assisted technique (7/12, 58 %) than with the single balloon-assisted technique (16/64, 25 %, p = 0.05). Occurrence of new lesions was significantly higher with the use of stent-assisted technique (25/43, 58 %) than with the single balloon-assisted technique (p = 0.001). Symptomatic ischemic rates were similar between the three groups. The increased number of microcatheters was significantly related to the DWI abnormalities (two microcatheters, 15/63 (23.8 %); three microcatheters, 20/41 (48.8 %) (p = 0.008); four microcatheters, 12/15 (80 %) (p = 0.001)). Thromboembolic events detected on DWI related to coil embolization for unruptured aneurysms are relatively common, especially in association with the double balloon-assisted and stent-assisted techniques. Furthermore, the number of microcatheters is highly correlated with DWI abnormalities. The high rate of thromboembolic events suggests the need for evaluation of platelet reactivity and the addition or change of antiplatelet agents. (orig.)

Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator

Energy Technology Data Exchange (ETDEWEB)

Aguiar, V.A.P. [Instituto de Física da Universidade de São Paulo, São Paulo, SP (Brazil); Added, N., E-mail: nemitala@if.usp.br [Instituto de Física da Universidade de São Paulo, São Paulo, SP (Brazil); Medina, N.H.; Macchione, E.L.A.; Tabacniks, M.H.; Aguirre, F.R. [Instituto de Física da Universidade de São Paulo, São Paulo, SP (Brazil); Silveira, M.A.G.; Santos, R.B.B. [Centro Universitário da FEI, São Bernardo do Campo, SP (Brazil); Seixas, L.E. [Centro de Tecnologia da Informação Renato Archer, Campinas, SP (Brazil)

2014-08-01

In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic scattering collisions to achieve a low-flux with a high-uniformity ion beam to irradiate several devices. {sup 12}C, {sup 16}O, {sup 28}Si, {sup 35}Cl and {sup 63}Cu beams were used to test the experimental setup. In this system it is possible to use efficiently LET values of 17 MeV/mg/cm{sup 2} for an external beam arrangement and up to 32 MeV/mg/cm{sup 2} for in-vacuum irradiation.

Synchronization Techniques in Parallel Discrete Event Simulation

OpenAIRE

Lindén, Jonatan

2018-01-01

Discrete event simulation is an important tool for evaluating system models in many fields of science and engineering. To improve the performance of large-scale discrete event simulations, several techniques to parallelize discrete event simulation have been developed. In parallel discrete event simulation, the work of a single discrete event simulation is distributed over multiple processing elements. A key challenge in parallel discrete event simulation is to ensure that causally dependent ...

Radiation-hardened MRAM-based LUT for non-volatile FPGA soft error mitigation with multi-node upset tolerance

Science.gov (United States)

Zand, Ramtin; DeMara, Ronald F.

2017-12-01

In this paper, we have developed a radiation-hardened non-volatile lookup table (LUT) circuit utilizing spin Hall effect (SHE)-magnetic random access memory (MRAM) devices. The design is motivated by modeling the effect of radiation particles striking hybrid complementary metal oxide semiconductor/spin based circuits, and the resistive behavior of SHE-MRAM devices via established and precise physics equations. The models developed are leveraged in the SPICE circuit simulator to verify the functionality of the proposed design. The proposed hardening technique is based on using feedback transistors, as well as increasing the radiation capacity of the sensitive nodes. Simulation results show that our proposed LUT circuit can achieve multiple node upset (MNU) tolerance with more than 38% and 60% power-delay product improvement as well as 26% and 50% reduction in device count compared to the previous energy-efficient radiation-hardened LUT designs. Finally, we have performed a process variation analysis showing that the MNU immunity of our proposed circuit is realized at the cost of increased susceptibility to transistor and MRAM variations compared to an unprotected LUT design.

Event Memory: A Theory of Memory for Laboratory, Autobiographical, and Fictional Events

Science.gov (United States)

Rubin, David C.; Umanath, Sharda

2015-01-01

An event memory is a mental construction of a scene recalled as a single occurrence. It therefore requires the hippocampus and ventral visual stream needed for all scene construction. The construction need not come with a sense of reliving or be made by a participant in the event, and it can be a summary of occurrences from more than one encoding. The mental construction, or physical rendering, of any scene must be done from a specific location and time; this introduces a ‘self’ located in space and time, which is a necessary, but need not be a sufficient, condition for a sense of reliving. We base our theory on scene construction rather than reliving because this allows the integration of many literatures and because there is more accumulated knowledge about scene construction’s phenomenology, behavior, and neural basis. Event memory differs from episodic memory in that it does not conflate the independent dimensions of whether or not a memory is relived, is about the self, is recalled voluntarily, or is based on a single encoding with whether it is recalled as a single occurrence of a scene. Thus, we argue that event memory provides a clearer contrast to semantic memory, which also can be about the self, be recalled voluntarily, and be from a unique encoding; allows for a more comprehensive dimensional account of the structure of explicit memory; and better accounts for laboratory and real world behavioral and neural results, including those from neuropsychology and neuroimaging, than does episodic memory. PMID:25330330

Multiple cell upset cross-section modeling: A possible interpretation for the role of the ion energy-loss straggling and Auger recombination

Energy Technology Data Exchange (ETDEWEB)

Zebrev, G.I., E-mail: gizebrev@mephi.ru; Zemtsov, K.S.

2016-08-11

We found that the energy deposition fluctuations in the sensitive volumes may cause the multiple cell upset (MCU) multiplicity scatter in the nanoscale (with feature sizes less than 100 nm) memories. A microdosimetric model of the MCU cross-section dependence on LET is proposed. It was shown that ideally a staircase-shaped cross-section vs LET curve spreads due to the energy-loss straggling impact into a quasi-linear dependence with a slope depending on the memory cell area, the cell critical energy and efficiency of charge collection. This paper also presents a new model of the Auger recombination as a limiting process of the electron–hole charge yield, especially at the high-LET ion impact. A modified form of the MCU cross-section vs LET data interpolation is proposed, discussed and validated.

Multiple cell upset cross-section modeling: A possible interpretation for the role of the ion energy-loss straggling and Auger recombination

International Nuclear Information System (INIS)

Zebrev, G.I.; Zemtsov, K.S.

2016-01-01

We found that the energy deposition fluctuations in the sensitive volumes may cause the multiple cell upset (MCU) multiplicity scatter in the nanoscale (with feature sizes less than 100 nm) memories. A microdosimetric model of the MCU cross-section dependence on LET is proposed. It was shown that ideally a staircase-shaped cross-section vs LET curve spreads due to the energy-loss straggling impact into a quasi-linear dependence with a slope depending on the memory cell area, the cell critical energy and efficiency of charge collection. This paper also presents a new model of the Auger recombination as a limiting process of the electron–hole charge yield, especially at the high-LET ion impact. A modified form of the MCU cross-section vs LET data interpolation is proposed, discussed and validated.

Line-edge roughness induced single event transient variation in SOI FinFETs

International Nuclear Information System (INIS)

Wu Weikang; An Xia; Jiang Xiaobo; Chen Yehua; Liu Jingjing; Zhang Xing; Huang Ru

2015-01-01

The impact of process induced variation on the response of SOI FinFET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When FinFET biased at OFF state configuration (V gs = 0, V ds = V dd ) is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse (single event transient, SET) is consequently formed. The results reveal that with the presence of line-edge roughness (LER), which is one of the major variation sources in nano-scale FinFETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered: type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters, correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size. (paper)

Assessing the association between omalizumab and arteriothrombotic events through spontaneous adverse event reporting.

Science.gov (United States)

Ali, Ayad K; Hartzema, Abraham G

2012-01-01

Omalizumab is a monoclonal antibody, indicated for the treatment of severe allergic asthma. In Europe, there have been concerns about the cardiovascular safety of omalizumab. The objective of this study was to analyze the association between omalizumab and arterial thrombotic events in a spontaneous adverse drug reaction reporting database in the US. Reports of arterial thrombotic events submitted to the US Food and Drug Administration's Adverse Event Reporting System (AERS) between 2004 and 2011 were retrieved and analyzed by the reporting odds ratio data mining algorithm. The reporting odds ratio of arterial thrombotic events for omalizumab was compared with specific asthma medications and all drugs in the AERS. Values ≥2 were considered significant safety signals. The Medical Dictionary for Regulatory Activities Preferred Terms were used to identify arterial thrombotic events (eg, stroke, myocardial infarction). In total, 293,783 reports of arterial thrombotic events were retrieved (about 2% of all adverse drug reaction reports), corresponding to 2274 asthma drug-arterial thrombotic events pairs (omalizumab, 222; inhaled corticosteroids [ICS], 131; long-acting beta-agonists [LABA], 102; single-device combination ICS-LABA, 506; inhaled short-acting beta-agonists [SABA], 475; oral SABA, 6; inhaled antimuscarinics [AMC], 477; single-device combination AMC-SABA, 127; xanthines, 50; leukotriene modifiers, 174; and mast cell stabilizers, 4). Reporting odds ratio and 95% confidence interval values for omalizumab compared with other asthma drugs and all drugs in AERS were 2.75 (2.39-316) and 1.09 (0.95-1.24), respectively. Omalizumab ranked second after ICS in the risk of arterial thrombotic events, followed by AMC, AMC-SABA, and ICS-LABA. Omalizumab is associated with higher than expected reporting of arterial thrombotic events in asthmatic patients. This hypothesis needs further testing in robust epidemiological studies.

Assessing the association between omalizumab and arteriothrombotic events through spontaneous adverse event reporting

Directory of Open Access Journals (Sweden)

Ali AK

2012-05-01

Full Text Available Ayad K Ali, Abraham G HartzemaDepartment of Pharmaceutical Outcomes and Policy, College of Pharmacy, University of Florida, Gainesville, FL, USABackground: Omalizumab is a monoclonal antibody, indicated for the treatment of severe allergic asthma. In Europe, there have been concerns about the cardiovascular safety of omalizumab. The objective of this study was to analyze the association between omalizumab and arterial thrombotic events in a spontaneous adverse drug reaction reporting database in the US.Methods and materials: Reports of arterial thrombotic events submitted to the US Food and Drug Administration's Adverse Event Reporting System (AERS between 2004 and 2011 were retrieved and analyzed by the reporting odds ratio data mining algorithm. The reporting odds ratio of arterial thrombotic events for omalizumab was compared with specific asthma medications and all drugs in the AERS. Values ≥2 were considered significant safety signals. The Medical Dictionary for Regulatory Activities Preferred Terms were used to identify arterial thrombotic events (eg, stroke, myocardial infarction.Results: In total, 293,783 reports of arterial thrombotic events were retrieved (about 2% of all adverse drug reaction reports, corresponding to 2274 asthma drug-arterial thrombotic events pairs (omalizumab, 222; inhaled corticosteroids [ICS], 131; long-acting beta-agonists [LABA], 102; single-device combination ICS-LABA, 506; inhaled short-acting beta-agonists [SABA], 475; oral SABA, 6; inhaled antimuscarinics [AMC], 477; single-device combination AMC-SABA, 127; xanthines, 50; leukotriene modifiers, 174; and mast cell stabilizers, 4. Reporting odds ratio and 95% confidence interval values for omalizumab compared with other asthma drugs and all drugs in AERS were 2.75 (2.39–316 and 1.09 (0.95–1.24, respectively. Omalizumab ranked second after ICS in the risk of arterial thrombotic events, followed by AMC, AMC-SABA, and ICS-LABA.Conclusion: Omalizumab is

Dynamics and predictions in the co-event interpretation

International Nuclear Information System (INIS)

Ghazi-Tabatabai, Yousef; Wallden, Petros

2009-01-01

Sorkin has introduced a new, observer independent, interpretation of quantum mechanics that can give a successful realist account of the 'quantum micro-world' as well as explaining how classicality emerges at the level of observable events for a range of systems including single time 'Copenhagen measurements'. This 'co-event interpretation' presents us with a new ontology, in which a single 'co-event' is real. A new ontology necessitates a review of the dynamical and predictive mechanism of a theory, and in this paper we begin the process by exploring means of expressing the dynamical and predictive content of histories theories in terms of co-events

Preparation and Properties of Anisotropic Nano-crystalline NdFeB Powders Made by Hydrogen Decrepitation of Die Upsetting Magnets

Energy Technology Data Exchange (ETDEWEB)

Yi, P P; Lee, D; Yan, A R, E-mail: ypp@nimte.ac.cn [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

2011-01-01

Anisotropic nanocrystalline NdFeB powders were prepared by hydrogen decrepitation (HD) of die upsetting magnets. The effects of varying temperatures of HD on the microstructure and magnetic properties of the anisotropic NdFeB particles were studied. It shows that the powders which obtained by HD process at higher temperature were larger than that at lower temperature, and the HD powders show a well anisotropy at 723 K, the remanence (B{sub r}) was more than 12.46 kG, the maximum energy product ((BH){sub max}) was 19.06 MGOe, and the coercivity (H{sub cj}) was 7.2 kOe. The microstructure of the anisotropic powders revealed that with a reasonable HD temperature, the platelet grains were not destroyed. They were nearly 150-300 nm long and 30-50 nm wide. The results indicate that HD process was an effective way to prepare the anisotropic NdFeB powders.

Single-event burnout hardening of planar power MOSFET with partially widened trench source

Science.gov (United States)

Lu, Jiang; Liu, Hainan; Cai, Xiaowu; Luo, Jiajun; Li, Bo; Li, Binhong; Wang, Lixin; Han, Zhengsheng

2018-03-01

We present a single-event burnout (SEB) hardened planar power MOSFET with partially widened trench sources by three-dimensional (3D) numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region (P-well region below the N+ source). The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer (LET), which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to 0.7 pC/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications. Project supported by the National Natural Science Foundation of China (Nos. 61404161, 61404068, 61404169).

Mutation Scanning in a Single and a Stacked Genetically Modified (GM) Event by Real-Time PCR and High Resolution Melting (HRM) Analysis

Science.gov (United States)

Ben Ali, Sina-Elisabeth; Madi, Zita Erika; Hochegger, Rupert; Quist, David; Prewein, Bernhard; Haslberger, Alexander G.; Brandes, Christian

2014-01-01

Genetic mutations must be avoided during the production and use of seeds. In the European Union (EU), Directive 2001/18/EC requires any DNA construct introduced via transformation to be stable. Establishing genetic stability is critical for the approval of genetically modified organisms (GMOs). In this study, genetic stability of two GMOs was examined using high resolution melting (HRM) analysis and real-time polymerase chain reaction (PCR) employing Scorpion primers for amplification. The genetic variability of the transgenic insert and that of the flanking regions in a single oilseed rape variety (GT73) and a stacked maize (MON88017 × MON810) was studied. The GT73 and the 5' region of MON810 showed no instabilities in the examined regions. However; two out of 100 analyzed samples carried a heterozygous point mutation in the 3' region of MON810 in the stacked variety. These results were verified by direct sequencing of the amplified PCR products as well as by sequencing of cloned PCR fragments. The occurrence of the mutation suggests that the 5' region is more suitable than the 3' region for the quantification of MON810. The identification of the single nucleotide polymorphism (SNP) in a stacked event is in contrast to the results of earlier studies of the same MON810 region in a single event where no DNA polymorphism was found. PMID:25365178

Dipyridamole thallium-201 single-photon emission computed tomography for prediction of perioperative cardiac events in patients with arteriosclerosis obliterans undergoing vascular surgery

International Nuclear Information System (INIS)

Ziyang, Huang; Komori, Sadayoshi; Sawanobori, Takao

1998-01-01

The aim of the study was to determine whether or not dipyridamole thallium-201 single-photon emission computed tomography ( 201 Tl-SPECT) has significant additive value for predicting perioperative cardiac events in patients with arteriosclerosis obliterans (ASO) undergoing vascular surgery. Routine preoperative 201 Tl-SPECT was performed in 106 consecutive patients with ASO (age 68±8.9 years; 91 men and 15 women). The frequency of reversible defects in a clinical high-risk group (n=44) was significantly higher than in a low-risk group (n=62; 55% vs 24%, p 201 Tl-SPECT data to clinical risk-stratified patients with ASO allows better prediction of perioperative cardiac events. (author)

Study of run time errors of the ATLAS Pixel Detector in the 2012 data taking period

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00339072

2013-05-16

The high resolution silicon Pixel detector is critical in event vertex reconstruction and in particle track reconstruction in the ATLAS detector. During the pixel data taking operation, some modules (Silicon Pixel sensor +Front End Chip+ Module Control Chip (MCC)) go to an auto-disable state, where the Modules don’t send the data for storage. Modules become operational again after reconfiguration. The source of the problem is not fully understood. One possible source of the problem is traced to the occurrence of single event upset (SEU) in the MCC. Such a module goes to either a Timeout or Busy state. This report is the study of different types and rates of errors occurring in the Pixel data taking operation. Also, the study includes the error rate dependency on Pixel detector geometry.

Treatment of complementary events in event trees in constructing linked fault trees for level 1 and level 2 PRA

International Nuclear Information System (INIS)

Jo, Y. G.

2008-01-01

Complementary events in the event trees for a PRA model should be treated properly in order to evaluate plant risk correctly. In this study, the characteristics of the following three different cut-set generation methods were investigated first in order to find the best practical way for treating complementary events: 1) exact method which treats complementary events logically, 2) no-delete term method which does not treat complementary events at all, and 3) delete term method which treats complementary events by deleting nonsense cut-sets which are generated as a result of ignoring complementary events. Then, practical methods for treating complementary events in constructing linked fault trees for level 1 and level 2 PRA in EPRI R and R workstation software environment, where CAFTA is the fault tree editor and FORTE is the cut-set engine, were suggested and demonstrated. The suggested methods deal with the following selected four typical cases: Case 1: an event tree event (E) is represented by a fault tree gate whose inputs consist of only fault tree gates, Case 2: E is represented by a single basic event, Case 3: E is represented by an OR fault tree gate which has a single basic event and a fault tree gate as inputs, and Case 4: E is represented by an AND fault tree gate which has a single basic event and a fault tree gate as inputs. In the suggested methods, first the high level logic structures of event tree events are examined and restructured, if needed. Then, the delete term method, the exact method, and the combination of the two methods are applied to Case 1, Case 2, and Cases 3 and 4, respectively. Also, it is recommended to treat complementary events, using the suggested methods, before level 1 and level 2 PRA fault trees are coupled. It should be noted that the selected four typical cases may not cover all different cases encountered in level 1 and level 2 PRA modeling. However, a process similar to the one suggested in this study may be used to find

Dynamics and predictions in the co-event interpretation

Energy Technology Data Exchange (ETDEWEB)

Ghazi-Tabatabai, Yousef [Blackett Laboratory, Imperial College, London, SW7 2AZ (United Kingdom); Wallden, Petros [Raman Research Institute, Bangalore 560 080 (India)

2009-06-12

Sorkin has introduced a new, observer independent, interpretation of quantum mechanics that can give a successful realist account of the 'quantum micro-world' as well as explaining how classicality emerges at the level of observable events for a range of systems including single time 'Copenhagen measurements'. This 'co-event interpretation' presents us with a new ontology, in which a single 'co-event' is real. A new ontology necessitates a review of the dynamical and predictive mechanism of a theory, and in this paper we begin the process by exploring means of expressing the dynamical and predictive content of histories theories in terms of co-events.

When a Patient Commits Suicide.

Science.gov (United States)

Marshall, Karol A.

1980-01-01

Suicide is a tragic and upsetting event which sometimes occurs when a person is in some form of therapy. This paper advocates a process after a patient commits suicide which allows for a thorough and orderly working through of the event by involved treatment personnel. (Author)

Simultaneous Determination of Structure and Event Location Using Body and Surface Wave Measurements at a Single Station: Preparation for Mars Data from the InSight Mission

Science.gov (United States)

Panning, M. P.; Banerdt, W. B.; Beucler, E.; Blanchette-Guertin, J. F.; Boese, M.; Clinton, J. F.; Drilleau, M.; James, S. R.; Kawamura, T.; Khan, A.; Lognonne, P. H.; Mocquet, A.; van Driel, M.

2015-12-01

An important challenge for the upcoming InSight mission to Mars, which will deliver a broadband seismic station to Mars along with other geophysical instruments in 2016, is to accurately determine event locations with the use of a single station. Locations are critical for the primary objective of the mission, determining the internal structure of Mars, as well as a secondary objective of measuring the activity of distribution of seismic events. As part of the mission planning process, a variety of techniques have been explored for location of marsquakes and inversion of structure, and preliminary procedures and software are already under development as part of the InSight Mars Quake and Mars Structure Services. One proposed method, involving the use of recordings of multiple-orbit surface waves, has already been tested with synthetic data and Earth recordings. This method has the strength of not requiring an a priori velocity model of Mars for quake location, but will only be practical for larger events. For smaller events where only first orbit surface waves and body waves are observable, other methods are required. In this study, we implement a transdimensional Bayesian inversion approach to simultaneously invert for basic velocity structure and location parameters (epicentral distance and origin time) using only measurements of body wave arrival times and dispersion of first orbit surface waves. The method is tested with synthetic data with expected Mars noise and Earth data for single events and groups of events and evaluated for errors in both location and structural determination, as well as tradeoffs between resolvable parameters and the effect of 3D crustal variations.

Characterization of radiation effects in 65 nm digital circuits with the DRAD digital radiation test chip

International Nuclear Information System (INIS)

Casas, L.M. Jara; Ceresa, D.; Kulis, S.; Christiansen, J.; Francisco, R.; Miryala, S.; Gnani, D.

2017-01-01

A Digital RADiation (DRAD) test chip has been specifically designed to study the impact of Total Ionizing Dose (TID) (<1 Grad) and Single Event Upset (SEU) on digital logic gates in a 65 nm CMOS technology. Nine different versions of standard cell libraries are studied in this chip, basically differing in the device dimensions, V t flavor and layout of the device. Each library has eighteen test structures specifically designed to characterize delay degradation and power consumption of the standard cells. For SEU study, a dedicated test structure based on a shift register is designed for each library. TID results up to 500 Mrad are reported.

NASA Space Engineering Research Center for VLSI systems design

Science.gov (United States)

1991-01-01

This annual review reports the center's activities and findings on very large scale integration (VLSI) systems design for 1990, including project status, financial support, publications, the NASA Space Engineering Research Center (SERC) Symposium on VLSI Design, research results, and outreach programs. Processor chips completed or under development are listed. Research results summarized include a design technique to harden complementary metal oxide semiconductors (CMOS) memory circuits against single event upset (SEU); improved circuit design procedures; and advances in computer aided design (CAD), communications, computer architectures, and reliability design. Also described is a high school teacher program that exposes teachers to the fundamentals of digital logic design.

Radiation tolerance and mitigation strategies for FPGA:s in the ATLAS TileCal Demonstrator

CERN Document Server

Akerstedt, H; The ATLAS collaboration

2013-01-01

During 2014, demonstrator electronics will be installed in a Tile calorimeter "drawer" to get long term experience with the inherently redundant electronics proposed for a full upgrade scheduled for 2022. The new system, being FPGA-based, uses dense programmable logic which must be proven to be sufficently radiation tolerant. It must be protected against radiation induced single event upsets that corrupt memory and logic functions. Radiation induced errors need to be found and compensated for in time, to minimize data loss but also to avoid permanent damage. Strategies for detecting and correcting radiation induced errors in the Kintex-7 FPGA:s of the demonstrator are evaluated and discussed.

Radiation tolerance and mitigation strategies for FPGA:s in the ATLAS TileCal Demonstrator

CERN Document Server

Akerstedt, H; The ATLAS collaboration; Drake, G; Muschter, S; Oreglia, M; Tang, F; Anderson, K; Paramonov, A

2013-01-01

During 2014, upgrade-demonstrator electronics will be installed in a Tile calorimeter drawer to obtain long term experience with the inherently redundant electronics proposed for a full upgrade scheduled for 2022. The new, FPGA-based system uses dense programmable logic, which must be proven to be sufficiently radiation tolerant. It must also be protected against radiation induced single event upsets that can corrupt memory and logic Radiation induced errors need to be found and compensated for in time to minimize data loss, and also to avoid permanent damage. Strategies for detecting and correcting radiation induced errors in the Kintex-7 FPGAs on the demonstrator electronics are evaluated and discussed.

Soft error evaluation in SRAM using α sources

International Nuclear Information System (INIS)

He Chaohui; Chu Jun; Ren Xueming; Xia Chunmei; Yang Xiupei; Zhang Weiwei; Wang Hongquan; Xiao Jiangbo; Li Xiaolin

2006-01-01

Soft errors in memories influence directly the reliability of products. To compare the ability of three different memories against soft errors by experiments of alpha particles irradiation, the numbers of soft errors are measured for three different SRAMs and the cross sections of single event upset (SEU) and failures in time (FIT) are calculated. According to the cross sections of SEU, the ability of A166M against soft errors is the best and then B166M, the last B200M. The average FIT of B166M is smaller than that of B200M, and that of A166M is the biggest among them. (authors)

Adverse events associated with pediatric exposures to dextromethorphan.

Science.gov (United States)

Paul, Ian M; Reynolds, Kate M; Kauffman, Ralph E; Banner, William; Bond, G Randall; Palmer, Robert B; Burnham, Randy I; Green, Jody L

2017-01-01

Dextromethorphan is the most common over-the-counter (OTC) antitussive medication. We sought to characterize adverse events associated with dextromethorphan in children dextromethorphan with ≥1 adverse event from multiple U.S. sources (National Poison Data System, FDA Adverse Event Reporting System, manufacturer safety reports, news/media, medical literature) reported between 2008 and 2014. An expert panel determined the relationship between exposure and adverse events, estimated dose ingested, intent of exposure, and identified contributing factors to exposure. 1716 cases contained ≥1 adverse event deemed at least potentially related to dextromethorphan; 1417 were single product exposures. 773/1417 (55%) involved only one single-ingredient dextromethorphan product (dextromethorphan-only). Among dextromethorphan-only cases, 3% followed ingestion of a therapeutic dose; 78% followed an overdose. 69% involved unsupervised self-administration and 60% occurred in children dextromethorphan-only ingestion. Adverse events were predominantly associated with overdose, most commonly affecting the central nervous and autonomic systems.

Search for supersymmetry in pp collisions at sqrt(s)=7 TeV in events with a single lepton, jets, and missing transverse momentum

Energy Technology Data Exchange (ETDEWEB)

Chatrchyan, Serguei [Yerevan Physics Inst. (Armenia); et al.

2011-08-01

Results are reported from a search for physics beyond the standard model in proton-proton collisions at a center-of-mass energy of 7 TeV, focusing on the signature with a single, isolated, high-transverse-momentum lepton (electron or muon), energetic jets, and large missing transverse momentum. The data sample comprises an integrated luminosity of 36 inverse picobarns, recorded by the CMS experiment at the LHC. The search is motivated by models of new physics, including supersymmetry. The observed event yields are consistent with standard model backgrounds predicted using control samples obtained from the data. The characteristics of the event sample are consistent with those expected for the production of t t-bar and W +jets events. The results are interpreted in terms of limits on the parameter space for the constrained minimal supersymmetric extension of the standard model.

The single European market - a Schumpeterian event?

OpenAIRE

Siebert, Horst

1989-01-01

It is now four years after the White Paper launched the project on the completion of the internal market [Commission, 1985]. 300 steps were packaged and sold in a manner by Delors and Lord Cockfield that "caught on". The basic strategy is simple: abolish or reduce market segmentations that still exist, facilitate free market access, as well as establish the free movement of people, goods, services, and capital (the so-called four freedoms). Will the single European market prove to be an insti...

Sensitivity studies on the approaches for addressing multiple initiating events in fire events PSA

Energy Technology Data Exchange (ETDEWEB)

Kang, Dae Il; Lim, Ho Gon [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2016-10-15

A single fire event within a fire compartment or a fire scenario can cause multiple initiating events (IEs). As an example, a fire in a turbine building fire area can cause a loss of the main feed-water (LOMF) and loss of off-site power (LOOP) IEs. Previous domestic fire events PSA had considered only the most severe initiating event among multiple initiating events. NUREG/CR-6850 and ANS/ASME PRA Standard require that multiple IEs are to be addressed in fire events PSA. In this paper, sensitivity studies on the approaches for addressing multiple IEs in fire events PSA for Hanul Unit 3 were performed and their results were presented. In this paper, sensitivity studies on the approaches for addressing multiple IEs in fire events PSA are performed and their results were presented. From the sensitivity analysis results, we can find that the incorporations of multiple IEs into fire events PSA model result in the core damage frequency (CDF) increase and may lead to the generation of the duplicate cutsets. Multiple IEs also can occur at internal flooding event or other external events such as seismic event. They should be considered in the constructions of PSA models in order to realistically estimate risk due to flooding or seismic events.

CHARACTERIZING LENSES AND LENSED STARS OF HIGH-MAGNIFICATION SINGLE-LENS GRAVITATIONAL MICROLENSING EVENTS WITH LENSES PASSING OVER SOURCE STARS

International Nuclear Information System (INIS)

Choi, J.-Y.; Shin, I.-G.; Park, S.-Y.; Han, C.; Gould, A.; Gaudi, B. S.; Henderson, C. B.; Sumi, T.; Udalski, A.; Beaulieu, J.-P.; Street, R.; Dominik, M.; Allen, W.; Almeida, L. A.; Bos, M.; Christie, G. W.; Depoy, D. L.; Dong, S.; Drummond, J.; Gal-Yam, A.

2012-01-01

We present the analysis of the light curves of nine high-magnification single-lens gravitational microlensing events with lenses passing over source stars, including OGLE-2004-BLG-254, MOA-2007-BLG-176, MOA-2007-BLG-233/OGLE-2007-BLG-302, MOA-2009-BLG-174, MOA-2010-BLG-436, MOA-2011-BLG-093, MOA-2011-BLG-274, OGLE-2011-BLG-0990/MOA-2011-BLG-300, and OGLE-2011-BLG-1101/MOA-2011-BLG-325. For all of the events, we measure the linear limb-darkening coefficients of the surface brightness profile of source stars by measuring the deviation of the light curves near the peak affected by the finite-source effect. For seven events, we measure the Einstein radii and the lens-source relative proper motions. Among them, five events are found to have Einstein radii of less than 0.2 mas, making the lenses very low mass star or brown dwarf candidates. For MOA-2011-BLG-274, especially, the small Einstein radius of θ E ∼ 0.08 mas combined with the short timescale of t E ∼ 2.7 days suggests the possibility that the lens is a free-floating planet. For MOA-2009-BLG-174, we measure the lens parallax and thus uniquely determine the physical parameters of the lens. We also find that the measured lens mass of ∼0.84 M ☉ is consistent with that of a star blended with the source, suggesting that the blend is likely to be the lens. Although we did not find planetary signals for any of the events, we provide exclusion diagrams showing the confidence levels excluding the existence of a planet as a function of the separation and mass ratio.

CHARACTERIZING LENSES AND LENSED STARS OF HIGH-MAGNIFICATION SINGLE-LENS GRAVITATIONAL MICROLENSING EVENTS WITH LENSES PASSING OVER SOURCE STARS

Energy Technology Data Exchange (ETDEWEB)

Choi, J.-Y.; Shin, I.-G.; Park, S.-Y.; Han, C. [Department of Physics, Institute for Astrophysics, Chungbuk National University, Cheongju 371-763 (Korea, Republic of); Gould, A.; Gaudi, B. S.; Henderson, C. B. [Department of Astronomy, Ohio State University, 140 W. 18th Ave., Columbus, OH 43210 (United States); Sumi, T. [Department of Earth and Space Science, Osaka University, Osaka 560-0043 (Japan); Udalski, A. [Warsaw University Observatory, Al. Ujazdowskie 4, 00-478 Warszawa (Poland); Beaulieu, J.-P. [Institut d' Astrophysique de Paris, UMR7095 CNRS-Universite Pierre and Marie Curie, 98 bis boulevard Arago, 75014 Paris (France); Street, R. [Las Cumbres Observatory Global Telescope Network, 6740B Cortona Dr, Suite 102, Goleta, CA 93117 (United States); Dominik, M. [School of Physics and Astronomy, SUPA, University of St. Andrews, North Haugh, St. Andrews, KY16 9SS (United Kingdom); Allen, W. [Vintage Lane Observatory, Blenheim (New Zealand); Almeida, L. A. [Instituto Nacional de Pesquisas Espaciais/MCTI, Sao Jose dos Campos, Sao Paulo (Brazil); Bos, M. [Molehill Astronomical Observatory, North Shore (New Zealand); Christie, G. W. [Auckland Observatory, P.O. Box 24-180, Auckland (New Zealand); Depoy, D. L. [Department of Physics, Texas A and M University, College Station, TX (United States); Dong, S. [Institute for Advanced Study, Einstein Drive, Princeton, NJ 08540 (United States); Drummond, J. [Possum Observatory, Patutahi (New Zealand); Gal-Yam, A. [Benoziyo Center for Astrophysics, Weizmann Institute (Israel); Collaboration: muFUN Collaboration; MOA Collaboration; OGLE Collaboration; PLANET Collaboration; RoboNet Collaboration; MiNDSTEp Consortium; and others

2012-05-20

We present the analysis of the light curves of nine high-magnification single-lens gravitational microlensing events with lenses passing over source stars, including OGLE-2004-BLG-254, MOA-2007-BLG-176, MOA-2007-BLG-233/OGLE-2007-BLG-302, MOA-2009-BLG-174, MOA-2010-BLG-436, MOA-2011-BLG-093, MOA-2011-BLG-274, OGLE-2011-BLG-0990/MOA-2011-BLG-300, and OGLE-2011-BLG-1101/MOA-2011-BLG-325. For all of the events, we measure the linear limb-darkening coefficients of the surface brightness profile of source stars by measuring the deviation of the light curves near the peak affected by the finite-source effect. For seven events, we measure the Einstein radii and the lens-source relative proper motions. Among them, five events are found to have Einstein radii of less than 0.2 mas, making the lenses very low mass star or brown dwarf candidates. For MOA-2011-BLG-274, especially, the small Einstein radius of {theta}{sub E} {approx} 0.08 mas combined with the short timescale of t{sub E} {approx} 2.7 days suggests the possibility that the lens is a free-floating planet. For MOA-2009-BLG-174, we measure the lens parallax and thus uniquely determine the physical parameters of the lens. We also find that the measured lens mass of {approx}0.84 M{sub Sun} is consistent with that of a star blended with the source, suggesting that the blend is likely to be the lens. Although we did not find planetary signals for any of the events, we provide exclusion diagrams showing the confidence levels excluding the existence of a planet as a function of the separation and mass ratio.

Event boundaries and memory improvement.

Science.gov (United States)

Pettijohn, Kyle A; Thompson, Alexis N; Tamplin, Andrea K; Krawietz, Sabine A; Radvansky, Gabriel A

2016-03-01

The structure of events can influence later memory for information that is embedded in them, with evidence indicating that event boundaries can both impair and enhance memory. The current study explored whether the presence of event boundaries during encoding can structure information to improve memory. In Experiment 1, memory for a list of words was tested in which event structure was manipulated by having participants walk through a doorway, or not, halfway through the word list. In Experiment 2, memory for lists of words was tested in which event structure was manipulated using computer windows. Finally, in Experiments 3 and 4, event structure was manipulated by having event shifts described in narrative texts. The consistent finding across all of these methods and materials was that memory was better when the information was distributed across two events rather than combined into a single event. Moreover, Experiment 4 demonstrated that increasing the number of event boundaries from one to two increased the memory benefit. These results are interpreted in the context of the Event Horizon Model of event cognition. Copyright © 2015 Elsevier B.V. All rights reserved.

An SEU resistant 256K SOI SRAM

Science.gov (United States)

Hite, L. R.; Lu, H.; Houston, T. W.; Hurta, D. S.; Bailey, W. E.

1992-12-01

A novel SEU (single event upset) resistant SRAM (static random access memory) cell has been implemented in a 256K SOI (silicon on insulator) SRAM that has attractive performance characteristics over the military temperature range of -55 to +125 C. These include worst-case access time of 40 ns with an active power of only 150 mW at 25 MHz, and a worst-case minimum WRITE pulse width of 20 ns. Measured SEU performance gives an Adams 10 percent worst-case error rate of 3.4 x 10 exp -11 errors/bit-day using the CRUP code with a conservative first-upset LET threshold. Modeling does show that higher bipolar gain than that measured on a sample from the SRAM lot would produce a lower error rate. Measurements show the worst-case supply voltage for SEU to be 5.5 V. Analysis has shown this to be primarily caused by the drain voltage dependence of the beta of the SOI parasitic bipolar transistor. Based on this, SEU experiments with SOI devices should include measurements as a function of supply voltage, rather than the traditional 4.5 V, to determine the worst-case condition.

Single-well moment tensor inversion of tensile microseismic events

Czech Academy of Sciences Publication Activity Database

Grechka, V.; Li, Z.; Howell, B.; Vavryčuk, Václav

2016-01-01

Roč. 81, č. 6 (2016), KS219-KS229 ISSN 0016-8033 R&D Projects: GA ČR(CZ) GAP210/12/1491; GA ČR(CZ) GC16-19751J Institutional support: RVO:67985530 Keywords : microseismic events * moment tensor inversion * mathematical formulation Subject RIV: DC - Siesmology, Volcanology, Earth Structure Impact factor: 2.391, year: 2016

Complex Parts, Complex Data: Why You Need to Understand What Radiation Single Event Testing Data Does and Doesn't Show and the Implications Thereof

Science.gov (United States)

LaBel, Kenneth A.; Berg, Melanie D.

2015-01-01

Electronic parts (integrated circuits) have grown in complexity such that determining all failure modes and risks from single particle event testing is impossible. In this presentation, the authors will present why this is so and provide some realism on what this means. Its all about understanding actual risks and not making assumptions.

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

Science.gov (United States)

Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

2016-02-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

Single Top-Quark Production at CDF

CERN Multimedia

CERN. Geneva

2008-01-01

The main challenge of the single top-quark search at the Tevatron is the huge background from W+jets events and QCD events, which makes the use of advanced multivariate techniques essential. The recent single top analyses using either the matrix element method, neural networks, likelihood discriminants or boosted decision trees as well as the combination of the former three analyses will be presented...

New method for selection and characterization of single-source events in Ni+Ni collisions at 32 A.MeV; Nouvelle methode de selection et caracterisation des evenements monosource dans les collisions Ni+Ni a 32 A.MeV

Energy Technology Data Exchange (ETDEWEB)

Maskay-Wallez, Anne-Marie [Inst. de Physique Nucleaire, Lyon-1 Univ., 69 - Villeurbanne (France)

1999-07-13

The study of heavy ion collisions, with the help of such efficient multi-detectors as INDRA, has shown the persistence of reactions leading to single-source events, up to bombarding energies higher than the Fermi one. These events could help characterizing an expected phase transition in nuclear matter. Whatever interesting they may be, the single-source events correspond to a small part of the total cross section, which makes them difficult to isolate and therefore to analyze. That is why different selection means have been tested - thanks to the 'Simon' event generator - on a simulated Ni + Ni at 32 A{center_dot}MeV sample, before any application to the INDRA experimental data. As the known methods based on global variables did not prove effective, a set of new 4-dimensional quantities has been built, whose main advantage lies in a better description of physical events. From a Discriminant Analysis performed on 625 of these new 'moments' proceeds a highly discriminant variable, called D{sub 625}. The experimental cross section associated with D{sub 625}-selected single-source events amounts to 170 mb at 32 A{center_dot}MeV. Such quasi-fusion events are shown to disappear at about 60 A{center_dot}MeV. As regards the deexcitation mode of the 32 A{center_dot}MeV Ni + Ni single-source events, an extensive experimental study and comparisons of the data with two reference models seem to confirm the hypothesis of a transition between fusion-evaporation and simultaneous multifragmentation mechanisms. (author)

New method for selection and characterization of single-source events in Ni+Ni collisions at 32 A.MeV; Nouvelle methode de selection et caracterisation des evenements monosource dans les collisions Ni+Ni a 32 A.MeV

Energy Technology Data Exchange (ETDEWEB)

Maskay-Wallez, Anne-Marie [Inst. de Physique Nucleaire, Lyon-1 Univ., 69 - Villeurbanne (France)

1999-07-13

The study of heavy ion collisions, with the help of such efficient multi-detectors as INDRA, has shown the persistence of reactions leading to single-source events, up to bombarding energies higher than the Fermi one. These events could help characterizing an expected phase transition in nuclear matter. Whatever interesting they may be, the single-source events correspond to a small part of the total cross section, which makes them difficult to isolate and therefore to analyze. That is why different selection means have been tested - thanks to the 'Simon' event generator - on a simulated Ni + Ni at 32 A{center_dot}MeV sample, before any application to the INDRA experimental data. As the known methods based on global variables did not prove effective, a set of new 4-dimensional quantities has been built, whose main advantage lies in a better description of physical events. From a Discriminant Analysis performed on 625 of these new 'moments' proceeds a highly discriminant variable, called D{sub 625}. The experimental cross section associated with D{sub 625}-selected single-source events amounts to 170 mb at 32 A{center_dot}MeV. Such quasi-fusion events are shown to disappear at about 60 A{center_dot}MeV. As regards the deexcitation mode of the 32 A{center_dot}MeV Ni + Ni single-source events, an extensive experimental study and comparisons of the data with two reference models seem to confirm the hypothesis of a transition between fusion-evaporation and simultaneous multifragmentation mechanisms. (author)

Event generators for address event representation transmitters

Science.gov (United States)

Serrano-Gotarredona, Rafael; Serrano-Gotarredona, Teresa; Linares Barranco, Bernabe

2005-06-01

freezed to transmit any further events during this time window. This limited the maximum transmission speed. In order to improve this speed, Boahen proposed an improved 'burst mode' scheme. In this scheme after the row arbitration, a complete row of events is pipelined out of the array and arbitered out of the chip at higher speed. During this single row event arbitration, the array is free to generate new events and communicate to the row arbiter, in a pipelined mode. This scheme significantly improves maximum event transmission speed, specially for high traffic situations were speed is more critical. We have analyzed and studied this approach and have detected some shortcomings in the circuits reported by Boahen, which may render some false situations under some statistical conditions. The present paper proposes some improvements to overcome such situations. The improved "AER Generator" has been implemented in an AER transmitter system

Single event and TREE latchup mitigation for a star tracker sensor: An innovative approach to system level latchup mitigation

International Nuclear Information System (INIS)

Kimbrough, J.R.; Colella, N.J.; Davis, R.W.; Bruener, D.B.; Coakley, P.G.; Lutjens, S.W.; Mallon, C.E.

1994-08-01

Electronic packages designed for spacecraft should be fault-tolerant and operate without ground control intervention through extremes in the space radiation environment. If designed for military use, the electronics must survive and function in a nuclear radiation environment. This paper presents an innovative ''blink'' approach rather than the typical ''operate through'' approach to achieve system level latchup mitigation on a prototype star tracker camera. Included are circuit designs, flash x-ray test data, and heavy ion data demonstrating latchup mitigation protecting micro-electronics from current latchup and burnout due to Single Event Latchup (SEL) and Transient Radiation Effects on Electronics (TREE)

The upgrade of the multiwire drift chamber readout of the HADES experiment at GSI: the optical end point board

Energy Technology Data Exchange (ETDEWEB)

Tarantola, Attilio; Michel, Jan; Muentz, Christian; Stroth, Joachim [Institut fuer Kernphysik, Goethe-Universitaet, Frankfurt (Germany); GSI, Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Froehlich, Ingo; Stroebele, Herbert [Institut fuer Kernphysik, Goethe-Universitaet, Frankfurt (Germany); Kolb, Burkhard; Traxler, Michael [GSI, Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Palka, Marek [Smoluchowski Institute of Physics, Jagiellonian University, Krakow (Poland); GSI, Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Wuestenfeld, Joern [Institut fuer Strahlenphysik, Forschungszentrum, Dresden-Rossendorf (Germany)

2009-07-01

One of the goal of the HADES upgrade project is the realization of a new data acquisition scheme for the 24 Multiwire Drift Chambers (MDCs), which allows to increase the readout speed of the 40.000 TDC channels. On the existing MDC Front End Electronic (FEE) side an Optical End Point Board (OEPB) has been designed to control configuration and readout of the chamber's TDCs. The OEPB uses Plastic Optical Fibres (POF) for data transmission, which results in total electromagnetic immunity, amazing simplicity in handling and low power consumption. The employment of a Lattice ECP2/M FPGA with SERDES manages serial data transmission and its large resources allow for the storage of several events close-to-front-end. As 400 OEPBs will be located in the detector acceptance, dedicated FPGA hardware is used to detect Single Event Upsets (SEUs).

Effect of body biasing on single-event induced charge collection in deep N-well technology

International Nuclear Information System (INIS)

Ding Yi; Hu Jian-Guo; Tan Hong-Zhou; Qin Jun-Rui

2015-01-01

As the device size decreases, the soft error induced by space ions is becoming a great concern for the reliability of integrated circuits (ICs). At present, the body biasing technique is widely used in highly scaled technologies. In the paper, using the three-dimensional technology computer-aided design (TCAD) simulation, we analyze the effect of the body biasing on the single-event charge collection in deep N-well technology. Our simulation results show that the body biasing mainly affects the behavior of the source, and the effect of body biasing on the charge collection for the nMOSFET and pMOSFET is quite different. For the nMOSFET, the RBB will increase the charge collection, while the FBB will reduce the charge collection. For the pMOSFET, the effect of RBB on the SET pulse width is small, while the FBB has an adverse effect. Moreover, the differenceof the effect of body biasing on the charge collection is compared in deep N-well and twin well. (paper)

Experimental and simulation studies of neutron-induced single-event burnout in SiC power diodes

Science.gov (United States)

Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori; Tadano, Hiroshi

2014-01-01

Neutron-induced single-event burnouts (SEBs) of silicon carbide (SiC) power diodes have been investigated by white neutron irradiation experiments and transient device simulations. It was confirmed that a rapid increase in lattice temperature leads to formation of crown-shaped aluminum and cracks inside the device owing to expansion stress when the maximum lattice temperature reaches the sublimation temperature. SEB device simulation indicated that the peak lattice temperature is located in the vicinity of the n-/n+ interface and anode contact, and that the positions correspond to a hammock-like electric field distribution caused by the space charge effect. Moreover, the locations of the simulated peak lattice temperature agree closely with the positions of the observed destruction traces. Furthermore, it was theoretically demonstrated that the period of temperature increase of a SiC power device is two orders of magnitude less than that of a Si power device, using a thermal diffusion equation.

Resistance Upset Welding of ODS Steel Fuel Claddings—Evaluation of a Process Parameter Range Based on Metallurgical Observations

Directory of Open Access Journals (Sweden)

Fabien Corpace

2017-08-01

Full Text Available Resistance upset welding is successfully applied to Oxide Dispersion Strengthened (ODS steel fuel cladding. Due to the strong correlation between the mechanical properties and the microstructure of the ODS steel, this study focuses on the consequences of the welding process on the metallurgical state of the PM2000 ODS steel. A range of process parameters is identified to achieve operative welding. Characterizations of the microstructure are correlated to measurements recorded during the welding process. The thinness of the clad is responsible for a thermal unbalance, leading to a higher temperature reached. Its deformation is important and may lead to a lack of joining between the faying surfaces located on the outer part of the join which can be avoided by increasing the dissipated energy or by limiting the clad stick-out. The deformation and the temperature reached trigger a recrystallization phenomenon in the welded area, usually combined with a modification of the yttrium dispersion, i.e., oxide dispersion, which can damage the long-life resistance of the fuel cladding. The process parameters are optimized to limit the deformation of the clad, preventing the compactness defect and the modification of the nanoscale oxide dispersion.

The impact of meal timing on performance, sleepiness, gastric upset, and hunger during simulated night shift.

Science.gov (United States)

Grant, Crystal Leigh; Dorrian, Jillian; Coates, Alison Maree; Pajcin, Maja; Kennaway, David John; Wittert, Gary Allen; Heilbronn, Leonie Kaye; Vedova, Chris Della; Gupta, Charlotte Cecilia; Banks, Siobhan

2017-10-07

This study examined the impact of eating during simulated night shift on performance and subjective complaints. Subjects were randomized to eating at night (n=5; 23.2 ± 5.5 y) or not eating at night (n=5; 26.2 ± 6.4 y). All participants were given one sleep opportunity of 8 h (22:00 h-06:00 h) before transitioning to the night shift protocol. During the four days of simulated night shift participants were awake from 16:00 h-10:00 h with a daytime sleep of 6 h (10:00 h-16:00 h). In the simulated night shift protocol, meals were provided at ≈0700 h, 1900 h and 0130 h (eating at night); or ≈0700 h, 0930 h, 1410 h and 1900 h (not eating at night). Subjects completed sleepiness, hunger and gastric complaint scales, a Digit Symbol Substitution Task and a 10-min Psychomotor Vigilance Task. Increased sleepiness and performance impairment was evident in both conditions at 0400 h (phunger and a small but significant elevation in stomach upset across the night (p<0.026). Eating at night was associated with elevated bloating on night one, which decreased across the protocol. Restricting food intake may limit performance impairments at night. Dietary recommendations to improve night-shift performance must also consider worker comfort.

Definition of Capabilities Needed for a Single Event Effects Test Facility

International Nuclear Information System (INIS)

Riemer, Bernie; Gallmeier, Franz X.

2014-01-01

The Federal Aviation Administration (FAA) is contemplating new regulations mandating testing of the vulnerability of flight-critical avionics to single event effects (SEE). A limited number of high-energy neutron test facilities currently serve the SEE industrial and institutional research community. The FAA recognizes that existing facilities have insufficient test capacity to meet new demand from such mandates; it desires more flexible irradiation capabilities to test complete, large systems and would like capabilities to address greater concerns for thermal neutrons. For this reason, the FAA funded this study by Spallation Neutron Source (SNS) staff with the ultimate aim of developing options for SEE test facilities using high-energy neutrons at the SNS complex. After an investigation of current SEE test practices and assessment of future testing requirements, three concepts were identified covering a range of test functionality, neutron flux levels, and fidelity to the atmospheric neutron spectrum. The costs and times required to complete each facility were also estimated. SEE testing is generally performed by accelerating the event rate to a point where the effects are still dominated by single events and double event causes of failures are negligible. In practice, acceleration factors of as high as 10 6 are applicable for component testing, whereas for systems testing acceleration factors of 10 4 seem to be the upper limit. It is strongly desirable that the irradiation facility be tunable over a large range of high-energy neutron fluxes of 10 2 - 10 4 n/cm 2 /s for systems testing and from 10 4 - 10 7 n/cm 2 /s for components testing. The most capable, most flexible, and highest-test-capacity option is a new stand-alone target station named the High-Energy neutron Test Station (HETS). It is also the most expensive option, with a cost to complete of approximately $100 million. Dual test enclosures would allow for simultaneous testing activity effectively

Definition of Capabilities Needed for a Single Event Effects Test Facility

Energy Technology Data Exchange (ETDEWEB)

Riemer, Bernie [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS); Gallmeier, Franz X. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS)

2014-12-01

The Federal Aviation Administration (FAA) is contemplating new regulations mandating testing of the vulnerability of flight-critical avionics to single event effects (SEE). A limited number of high-energy neutron test facilities currently serve the SEE industrial and institutional research community. The FAA recognizes that existing facilities have insufficient test capacity to meet new demand from such mandates; it desires more flexible irradiation capabilities to test complete, large systems and would like capabilities to address greater concerns for thermal neutrons. For this reason, the FAA funded this study by Spallation Neutron Source (SNS) staff with the ultimate aim of developing options for SEE test facilities using high-energy neutrons at the SNS complex. After an investigation of current SEE test practices and assessment of future testing requirements, three concepts were identified covering a range of test functionality, neutron flux levels, and fidelity to the atmospheric neutron spectrum. The costs and times required to complete each facility were also estimated. SEE testing is generally performed by accelerating the event rate to a point where the effects are still dominated by single events and double event causes of failures are negligible. In practice, acceleration factors of as high as 10⁶ are applicable for component testing, whereas for systems testing acceleration factors of 10⁴ seem to be the upper limit. It is strongly desirable that the irradiation facility be tunable over a large range of high-energy neutron fluxes of 10² - 10⁴ n/cm²/s for systems testing and from 10⁴ - 10⁷ n/cm²/s for components testing. The most capable, most flexible, and highest-test-capacity option is a new stand-alone target station named the High-Energy neutron Test Station (HETS). It is also the most expensive option, with a cost to complete of approximately $100 million. Dual test enclosures would

Helicity of the $W$ boson in single - lepton $t \\bar{t}$ events

Energy Technology Data Exchange (ETDEWEB)

Canelli, Maria Florencia [Rochester U.

2003-08-01

We have applied a general approach for extracting information from data to a study of top quarks produced in proton-antiproton (pp) collisions in the process pp ! tt. This reaction can be calculated in the Standard Model (SM), in which the top (or antitop) quarks decay into b quarks and W bosons: t ! W+ b, t ! W b. We examine the decays of the W boson in these events in order to establish how the spin of the W correlates with its momentum vector. This is dened by the helicity of the W boson (pro jection of its spin along its line of ight), which is also predicted by the SM. The analysis is based on a direct calculation of a probability for each event as a function of the helicity of the W bosons in top-antitop events in the lepton+jets nal state. These events correspond to one W decaying into a lepton and its neutrino, and the other W into a quark-antiquark pair, with the quarks from the W and the two b quarks evolving into jets of particles. The probability is calculated by convoluting the dierential cross section with the resolution and acceptance of the detector. This measurement uses top quarks collected by the D experiment in 125 events/pb of data in pp collisions at p s=1.8 TeV during Run I of the Fermilab TeVatron. Assuming the \\V{A" coupling of the SM decay, we obtain a longitudinal helicity fraction of F0=0.560.31(stat)0.07(syst) for the W, which is consistent with the prediction of the Standard Model of F0=0.70 for a top-quark mass of 175 GeV/c2 . The method employed in this analysis oers the possibility of increasing statistical precision by using both of the decays of W bosons in these events. Also Monte Carlo studies indicate that the approach provides an unbiased result in the limit of poor statistics. Although our measurement is severely limited by the small event sample of Run I, this powerful technique will provide far greater sensitivity to any departures from the SM in the data anticipated from Run II.

Space and military radiation effects in silicon-on-insulator devices

International Nuclear Information System (INIS)

Schwank, J.R.

1996-09-01

Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insulator (SOI) technology spurred much of its early development. Both of these advantages are a direct result of the reduced charge collection volume inherent to SOI technology. The fact that SOI transistor structures do not include parasitic n-p-n-p paths makes them immune to latchup. Even though considerable improvement in transient and single-event radiation hardness can be obtained by using SOI technology, there are some attributes of SOI devices and circuits that tend to limit their overall hardness. These attributes include the bipolar effect that can ultimately reduce the hardness of SOI ICs to SEU and transient ionizing radiation, and charge buildup in buried and sidewall oxides that can degrade the total-dose hardness of SOI devices. Nevertheless, high-performance SOI circuits can be fabricated that are hardened to both space and nuclear radiation environments, and radiation-hardened systems remain an active market for SOI devices. The effects of radiation on SOI MOS devices are reviewed

Comparison of CREME (cosmic-ray effects on microelectronics) model LET (linear energy transfer) spaceflight dosimetry data

Energy Technology Data Exchange (ETDEWEB)

Letaw, J.R.; Adams, J.H.

1986-07-15

The galactic cosmic radiation (GCR) component of space radiation is the dominant cause of single-event phenomena in microelectronic circuits when Earth's magnetic shielding is low. Spaceflights outside the magnetosphere and in high inclination orbits are examples of such circumstances. In high-inclination orbits, low-energy (high LET) particles are transmitted through the field only at extreme latitudes, but can dominate the orbit-averaged dose. GCR is an important part of the radiation dose to astronauts under the same conditions. As a test of the CREME environmental model and particle transport codes used to estimate single event upsets, we have compiled existing measurements of HZE doses were compiled where GCR is expected to be important: Apollo 16 and 17, Skylab, Apollo Soyuz Test Project, and Kosmos 782. The LET spectra, due to direct ionization from GCR, for each of these missions has been estimated. The resulting comparisons with data validate the CREME model predictions of high-LET galactic cosmic-ray fluxes to within a factor of two. Some systematic differences between the model and data are identified.

Event-specific qualitative and quantitative detection of five genetically modified rice events using a single standard reference molecule.

Science.gov (United States)

Kim, Jae-Hwan; Park, Saet-Byul; Roh, Hyo-Jeong; Shin, Min-Ki; Moon, Gui-Im; Hong, Jin-Hwan; Kim, Hae-Yeong

2017-07-01

One novel standard reference plasmid, namely pUC-RICE5, was constructed as a positive control and calibrator for event-specific qualitative and quantitative detection of genetically modified (GM) rice (Bt63, Kemingdao1, Kefeng6, Kefeng8, and LLRice62). pUC-RICE5 contained fragments of a rice-specific endogenous reference gene (sucrose phosphate synthase) as well as the five GM rice events. An existing qualitative PCR assay approach was modified using pUC-RICE5 to create a quantitative method with limits of detection correlating to approximately 1-10 copies of rice haploid genomes. In this quantitative PCR assay, the square regression coefficients ranged from 0.993 to 1.000. The standard deviation and relative standard deviation values for repeatability ranged from 0.02 to 0.22 and 0.10% to 0.67%, respectively. The Ministry of Food and Drug Safety (Korea) validated the method and the results suggest it could be used routinely to identify five GM rice events. Copyright © 2017 Elsevier Ltd. All rights reserved.

Radiation induced Single Event Effects in the ATLAS MDT-ASD front-end chip

CERN Document Server

Posch, C

2002-01-01

Single Event Effect (SEE) tests of the MDT-ASD, the ATLAS MDT front-end chip have been performed at the Harvard Cyclotron Lab. The MDT-ASD is an 8-channel drift tube read-out ASIC fabricated in a commercial 0.5um CMOS process (AMOS14TB). The chip contains a 53 bit register which holds the setup information and an associated shift register of the same length plus some additional control logic. 10 test devices were exposed to a 160 MeV proton beam with a fluence of 1.05E9 p.cm-2.s-1 up to >4.4E p.cm-2 per device. After a total fluence of 4.46E13 p.cm-2, 7 soft SEEs (non-permanent bit flips in the registers) and 0 hard/destructive SEE (e.g. latch-ups, SEL) had occurred. The simulated fluence for 10 years of LHC operation at nominal luminosity for worst case location MDT components is 2.67E11 h.cm-2. The rate of SEUs in the ASD setup register for all of ATLAS, derived from these numbers, is 2.4 per day. It is foreseen to update the active registers of the on-detector electronics at regular intervals. Depending on...

Analysis of early initiating event(s) in radiation-induced thymic lymphomagenesis

International Nuclear Information System (INIS)

Muto, Masahiro; Ying Chen; Kubo, Eiko; Mita, Kazuei

1996-01-01

Since the T cell receptor rearrangement is a sequential process and unique to the progeny of each clone, we investigated the early initiating events in radiation-induced thymic lymphomagenesis by comparing the oncogenic alterations with the pattern of γ T cell receptor (TCR) rearrangements. We reported previously that after leukemogenic irradiation, preneoplastic cells developed, albeit infrequently, from thymic leukemia antigen-2 + (TL-2 + ) thymocytes. Limited numbers of TL-2 + cells from individual irradiated B10.Thy-1.1 mice were injected into B10.Thy-1.2 mice intrathymically, and the common genetic changes among the donor-type T cell lymphomas were investigated with regard to p53 gene and chromosome aberrations. The results indicated that some mutations in the p53 gene had taken place in these lymphomas, but there was no common mutation among the donor-type lymphomas from individual irradiated mice, suggesting that these mutations were late-occurring events in the process of oncogenesis. On the other hand, there were common chromosome aberrations or translocations such as trisomy 15, t(7F; 10C), t(1A; 13D) or t(6A; XB) among the donor-type lymphomas derived from half of the individual irradiated mice. This indicated that the aberrations/translocations, which occurred in single progenitor cells at the early T cell differentiation either just before or after γ T cell receptor rearrangements, might be important candidates for initiating events. In the donor-type lymphomas from the other half of the individual irradiated mice, microgenetic changes were suggested to be initial events and also might take place in single progenitor cells just before or right after γ TCR rearrangements. (author)

Integrated Initiating Event Performance Indicators

International Nuclear Information System (INIS)

S. A. Eide; Dale M. Rasmuson; Corwin L. Atwood

2005-01-01

The U.S. Nuclear Regulatory Commission Industry Trends Program (ITP) collects and analyses industry-wide data, assesses the safety significance of results, and communicates results to Congress and other stakeholders. This paper outlines potential enhancements in the ITP to comprehensively cover the Initiating Events Cornerstone of Safety. Future work will address other cornerstones of safety. The proposed Tier 1 activity involves collecting data on ten categories of risk-significant initiating events, trending the results, and comparing early performance with prediction limits (allowable numbers of events, above which NRC action may occur). Tier 1 results would be used to monitor industry performance at the level of individual categories of initiating events. The proposed Tier 2 activity involves integrating the information for individual categories of initiating events into a single risk-based indicator, termed the Baseline Risk Index for Initiating Events or BRIIE. The BRIIE would be evaluated yearly and compared against a threshold. BRIIE results would be reported to Congress on a yearly basis

Single jet structure in e+e- annihilation

International Nuclear Information System (INIS)

Bianchi, F.; Giovannini, A.; Lupia, S.; Ugoccioni, R.

1993-01-01

By using JETSET 7.2 as e + e - event generator at different c.m. energies, we studied single jet multiplicity distributions in different rapidity and p T intervals. Good NB behavior is found and related clan structure analysis is performed. Observed differences in the behavior of the 2- and 3-jet samples can be understood in terms of the relative contribution of single quark and gluon jet to the 3-jet sample, which are obtained by selecting event by event in this sample the highest and the lowest energy jet respectively. (orig.)

Modeling the cosmic-ray-induced soft-error rate in integrated circuits: An overview

International Nuclear Information System (INIS)

Srinivasan, G.R.

1996-01-01

This paper is an overview of the concepts and methodologies used to predict soft-error rates (SER) due to cosmic and high-energy particle radiation in integrated circuit chips. The paper emphasizes the need for the SER simulation using the actual chip circuit model which includes device, process, and technology parameters as opposed to using either the discrete device simulation or generic circuit simulation that is commonly employed in SER modeling. Concepts such as funneling, event-by-event simulation, nuclear history files, critical charge, and charge sharing are examined. Also discussed are the relative importance of elastic and inelastic nuclear collisions, rare event statistics, and device vs. circuit simulations. The semi-empirical methodologies used in the aerospace community to arrive at SERs [also referred to as single-event upset (SEU) rates] in integrated circuit chips are reviewed. This paper is one of four in this special issue relating to SER modeling. Together, they provide a comprehensive account of this modeling effort, which has resulted in a unique modeling tool called the Soft-Error Monte Carlo Model, or SEMM

Evidence for s-channel single-top-quark production in events with one charged lepton and two jets at CDF.

Science.gov (United States)

Aaltonen, T; Amerio, S; Amidei, D; Anastassov, A; Annovi, A; Antos, J; Apollinari, G; Appel, J A; Arisawa, T; Artikov, A; Asaadi, J; Ashmanskas, W; Auerbach, B; Aurisano, A; Azfar, F; Badgett, W; Bae, T; Barbaro-Galtieri, A; Barnes, V E; Barnett, B A; Barria, P; Bartos, P; Bauce, M; Bedeschi, F; Behari, S; Bellettini, G; Bellinger, J; Benjamin, D; Beretvas, A; Bhatti, A; Bland, K R; Blumenfeld, B; Bocci, A; Bodek, A; Bortoletto, D; Boudreau, J; Boveia, A; Brigliadori, L; Bromberg, C; Brucken, E; Budagov, J; Budd, H S; Burkett, K; Busetto, G; Bussey, P; Butti, P; Buzatu, A; Calamba, A; Camarda, S; Campanelli, M; Canelli, F; Carls, B; Carlsmith, D; Carosi, R; Carrillo, S; Casal, B; Casarsa, M; Castro, A; Catastini, P; Cauz, D; Cavaliere, V; Cavalli-Sforza, M; Cerri, A; Cerrito, L; Chen, Y C; Chertok, M; Chiarelli, G; Chlachidze, G; Cho, K; Chokheli, D; Clark, A; Clarke, C; Convery, M E; Conway, J; Corbo, M; Cordelli, M; Cox, C A; Cox, D J; Cremonesi, M; Cruz, D; Cuevas, J; Culbertson, R; d'Ascenzo, N; Datta, M; de Barbaro, P; Demortier, L; Deninno, M; D'Errico, M; Devoto, F; Di Canto, A; Di Ruzza, B; Dittmann, J R; Donati, S; D'Onofrio, M; Dorigo, M; Driutti, A; Ebina, K; Edgar, R; Elagin, A; Erbacher, R; Errede, S; Esham, B; Farrington, S; Fernández Ramos, J P; Field, R; Flanagan, G; Forrest, R; Franklin, M; Freeman, J C; Frisch, H; Funakoshi, Y; Galloni, C; Garfinkel, A F; Garosi, P; Gerberich, H; Gerchtein, E; Giagu, S; Giakoumopoulou, V; Gibson, K; Ginsburg, C M; Giokaris, N; Giromini, P; Giurgiu, G; Glagolev, V; Glenzinski, D; Gold, M; Goldin, D; Golossanov, A; Gomez, G; Gomez-Ceballos, G; Goncharov, M; González López, O; Gorelov, I; Goshaw, A T; Goulianos, K; Gramellini, E; Grinstein, S; Grosso-Pilcher, C; Group, R C; Guimaraes da Costa, J; Hahn, S R; Han, J Y; Happacher, F; Hara, K; Hare, M; Harr, R F; Harrington-Taber, T; Hatakeyama, K; Hays, C; Heinrich, J; Herndon, M; Hocker, A; Hong, Z; Hopkins, W; Hou, S; Hughes, R E; Husemann, U; Hussein, M; Huston, J; Introzzi, G; Iori, M; Ivanov, A; James, E; Jang, D; Jayatilaka, B; Jeon, E J; Jindariani, S; Jones, M; Joo, K K; Jun, S Y; Junk, T R; Kambeitz, M; Kamon, T; Karchin, P E; Kasmi, A; Kato, Y; Ketchum, W; Keung, J; Kilminster, B; Kim, D H; Kim, H S; Kim, J E; Kim, M J; Kim, S H; Kim, S B; Kim, Y J; Kim, Y K; Kimura, N; Kirby, M; Knoepfel, K; Kondo, K; Kong, D J; Konigsberg, J; Kotwal, A V; Kreps, M; Kroll, J; Kruse, M; Kuhr, T; Kurata, M; Laasanen, A T; Lammel, S; Lancaster, M; Lannon, K; Latino, G; Lee, H S; Lee, J S; Leo, S; Leone, S; Lewis, J D; Limosani, A; Lipeles, E; Lister, A; Liu, H; Liu, Q; Liu, T; Lockwitz, S; Loginov, A; Lucchesi, D; Lucà, A; Lueck, J; Lujan, P; Lukens, P; Lungu, G; Lys, J; Lysak, R; Madrak, R; Maestro, P; Malik, S; Manca, G; Manousakis-Katsikakis, A; Marchese, L; Margaroli, F; Marino, P; Martínez, M; Matera, K; Mattson, M E; Mazzacane, A; Mazzanti, P; McNulty, R; Mehta, A; Mehtala, P; Mesropian, C; Miao, T; Mietlicki, D; Mitra, A; Miyake, H; Moed, S; Moggi, N; Moon, C S; Moore, R; Morello, M J; Mukherjee, A; Muller, Th; Murat, P; Mussini, M; Nachtman, J; Nagai, Y; Naganoma, J; Nakano, I; Napier, A; Nett, J; Neu, C; Nigmanov, T; Nodulman, L; Noh, S Y; Norniella, O; Oakes, L; Oh, S H; Oh, Y D; Oksuzian, I; Okusawa, T; Orava, R; Ortolan, L; Pagliarone, C; Palencia, E; Palni, P; Papadimitriou, V; Parker, W; Pauletta, G; Paulini, M; Paus, C; Phillips, T J; Piacentino, G; Pianori, E; Pilot, J; Pitts, K; Plager, C; Pondrom, L; Poprocki, S; Potamianos, K; Pranko, A; Prokoshin, F; Ptohos, F; Punzi, G; Ranjan, N; Redondo Fernández, I; Renton, P; Rescigno, M; Rimondi, F; Ristori, L; Robson, A; Rodriguez, T; Rolli, S; Ronzani, M; Roser, R; Rosner, J L; Ruffini, F; Ruiz, A; Russ, J; Rusu, V; Sakumoto, W K; Sakurai, Y; Santi, L; Sato, K; Saveliev, V; Savoy-Navarro, A; Schlabach, P; Schmidt, E E; Schwarz, T; Scodellaro, L; Scuri, F; Seidel, S; Seiya, Y; Semenov, A; Sforza, F; Shalhout, S Z; Shears, T; Shepard, P F; Shimojima, M; Shochet, M; Shreyber-Tecker, I; Simonenko, A; Sliwa, K; Smith, J R; Snider, F D; Song, H; Sorin, V; St Denis, R; Stancari, M; Stentz, D; Strologas, J; Sudo, Y; Sukhanov, A; Suslov, I; Takemasa, K; Takeuchi, Y; Tang, J; Tecchio, M; Teng, P K; Thom, J; Thomson, E; Thukral, V; Toback, D; Tokar, S; Tollefson, K; Tomura, T; Tonelli, D; Torre, S; Torretta, D; Totaro, P; Trovato, M; Ukegawa, F; Uozumi, S; Velev, G; Vellidis, C; Vernieri, C; Vidal, M; Vilar, R; Vizán, J; Vogel, M; Volpi, G; Vázquez, F; Wagner, P; Wallny, R; Wang, S M; Waters, D; Wester, W C; Whiteson, D; Wicklund, A B; Wilbur, S; Williams, H H; Wilson, J S; Wilson, P; Winer, B L; Wittich, P; Wolbers, S; Wolfe, H; Wright, T; Wu, X; Wu, Z; Yamamoto, K; Yamato, D; Yang, T; Yang, U K; Yang, Y C; Yao, W-M; Yeh, G P; Yi, K; Yoh, J; Yorita, K; Yoshida, T; Yu, G B; Yu, I; Zanetti, A M; Zeng, Y; Zhou, C; Zucchelli, S

2014-06-13

We report evidence for s-channel single-top-quark production in proton-antiproton collisions at center-of-mass energy sqrt[s] = 1.96 TeV using a data set that corresponds to an integrated luminosity of 9.4 fb(-1) collected by the Collider Detector at Fermilab. We select events consistent with the s-channel process including two jets and one leptonically decaying W boson. The observed significance is 3.8 standard deviations with respect to the background-only prediction. Assuming a top-quark mass of 172.5 GeV/c(2), we measure the s-channel cross section to be 1.41(-0.42)(+0.44) pb.