Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

International Nuclear Information System (INIS)

Li Shang-Sheng; Li Xiao-Lei; Su Tai-Chao; Jia Xiao-Peng; Ma Hong-An; Huang Guo-Feng; Li Yong

2011-01-01

High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond. (cross-disciplinary physics and related areas of science and technology)

Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

Energy Technology Data Exchange (ETDEWEB)

Rai, Chitharanjan, E-mail: raichitharanjan@gmail.co [Department of Physics, Mangalore University, Mangalagangotri 574 199 (India); Kalpataru First Grade Science College, Tiptur 572 202 (India); Sreenivas, K. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Dharmaprakash, S.M., E-mail: smdharma@yahoo.co [Department of Physics, Mangalore University, Mangalagangotri 574 199 (India)

2009-11-15

Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 deg. C/min. An increase in the Curie temperature T{sub c}=51 deg. C (for pure TGS, T{sub c}=48.5 deg. C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.

Space growth studies of Ce-doped Bi12SiO20 single crystal

International Nuclear Information System (INIS)

Zhou, Y.F.; Wang, J.C.; Tang, L.A.; Pan, Z.L.; Chen, N.F.; Chen, W.C.; Huang, Y.Y.; He, W.

2004-01-01

Ce-doped Bi 12 SiO 20 (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Ce concentration distribution, X-ray rocking curve absorption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one

Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

Directory of Open Access Journals (Sweden)

Choi Hyojeong

2016-09-01

Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

Single mode dye-doped polymer photonic crystal lasers

DEFF Research Database (Denmark)

Christiansen, Mads Brøkner; Buss, Thomas; Smith, Cameron

2010-01-01

Dye-doped polymer photonic crystal (PhC) lasers fabricated by combined nanoimprint and photolithography are studied for their reproducibility and stability characteristics. We introduce a phase shift in the PhC lattice that substantially improves the yield of single wavelength emission. Single mode...... emission and reproducibility of laser characteristics are important if the lasers are to be mass produced in, e. g., optofluidic sensor chips. The fabrication yield is above 85% with highly reproducible wavelengths (within 0.5%), and the temperature dependence on the wavelength is found to be -0.045 or -0...

Thermal diffusion boron doping of single-crystal natural diamond

Energy Technology Data Exchange (ETDEWEB)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2016-05-28

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Thermal diffusion boron doping of single-crystal natural diamond

International Nuclear Information System (INIS)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

2016-01-01

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Superconductivity in Sm-doped CaFe2As2 single crystals

Science.gov (United States)

Dong-Yun, Chen; Bin-Bin, Ruan; Jia, Yu; Qi, Guo; Xiao-Chuan, Wang; Qing-Ge, Mu; Bo-Jin, Pan; Tong, Liu; Gen-Fu, Chen; Zhi-An, Ren

2016-06-01

In this article, the Sm-doping single crystals Ca1 - x Sm x Fe2As2 (x = 0 ˜ 0.2) were prepared by the CaAs flux method, and followed by a rapid quenching treatment after the high temperature growth. The samples were characterized by structural, resistive, and magnetic measurements. The successful Sm-substitution was revealed by the reduction of the lattice parameter c, due to the smaller ionic radius of Sm3+ than Ca2+. Superconductivity was observed in all samples with onset T c varying from 27 K to 44 K upon Sm-doping. The coexistence of a collapsed phase transition and the superconducting transition was found for the lower Sm-doping samples. Zero resistivity and substantial superconducting volume fraction only happen in higher Sm-doping crystals with the nominal x > 0.10. The doping dependences of the c-axis length and onset T c were summarized. The high-T c observed in these quenched crystals may be attributed to simultaneous tuning of electron carriers doping and strain effect caused by lattice reduction of Sm-substitution. Project supported by the National Natural Science Foundation of China (Grant No. 11474339), the National Basic Research Program of China (Grant Nos. 2010CB923000 and 2011CBA00100), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB07020100).

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

2018-05-01

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Optical properties of Ni-doped MgGa2O4 single crystals grown by floating zone method

International Nuclear Information System (INIS)

Suzuki, Takenobu; Hughes, Mark; Ohishi, Yasutake

2010-01-01

The single crystal growth conditions and spectroscopic characterization of Ni-doped MgGa 2 O 4 with inverse-spinel structure crystal family are described. Single crystals of this material have been grown by floating zone method. Ni-doped MgGa 2 O 4 single crystals have broadband fluorescence in the 1100-1600 nm wavelength range, 1.6 ms room temperature lifetime, 56% quantum efficiency and 1.05x10 -21 cm 2 stimulated emission cross section at the emission peak. This new material is very promising for tunable laser applications covering the important optical communication and eye safe wavelength region.

Antimicrobial activity and second harmonic studies on organic non-centrosymmetric pure and doped ninhydrin single crystals

Science.gov (United States)

Prasanyaa, T.; Jayaramakrishnan, V.; Haris, M.

2013-03-01

In this paper, we report the successful growth of pure, Cu2+ ions and Cd2+ ions doped on ninhydrin single crystals by slow solvent evaporation technique. The presence of Cu2+ and Cd2+ ions in the specimen of ninhydrin single crystal has been determined by atomic absorption spectroscopy. The powder X-ray diffraction analysis was done to calculate the lattice parameters of the pure and doped crystals. The percentage of transmittance of the crystal was recorded using the UV-Vis Spectrophotometer. Thermal behaviors of the grown crystals have been examined by the thermal gravimetric/differential thermal analysis. The hardness of the grown crystals was assessed and the results show the minor variation in the hardness value for the pure and doped ninhydrin samples. The value of the work hardening coefficient n was found to be 2.0, 1.0 and 1.06 for pure, copper and cadmium doped ninhydrin crystals respectively. The second harmonic generation efficiency of Cd2+ and Cu2+ doped ninhydrin is 8.3 and 6.3 times greater than well known nonlinear crystal of potassium dihydrogen phosphate respectively. The antibacterial and antifungal activities of the title compound were performed by disk diffusion method against the standard bacteria Escherichia coli, Xanthomonas oryzae and against the fungus Aspergillis niger and Aspergillus flavus.

Single mode dye-doped polymer photonic crystal lasers

International Nuclear Information System (INIS)

Christiansen, Mads B; Buß, Thomas; Smith, Cameron L C; Petersen, Sidsel R; Jørgensen, Mette M; Kristensen, Anders

2010-01-01

Dye-doped polymer photonic crystal (PhC) lasers fabricated by combined nanoimprint and photolithography are studied for their reproducibility and stability characteristics. We introduce a phase shift in the PhC lattice that substantially improves the yield of single wavelength emission. Single mode emission and reproducibility of laser characteristics are important if the lasers are to be mass produced in, e.g., optofluidic sensor chips. The fabrication yield is above 85% with highly reproducible wavelengths (within 0.5%), and the temperature dependence on the wavelength is found to be −0.045 or −0.066 nm K -1 , depending on the material

Room temperature ferromagnetism in Fe-doped semiconductor ZrS2 single crystals

Science.gov (United States)

Muhammad, Zahir; Lv, Haifeng; Wu, Chuanqiang; Habib, Muhammad; Rehman, Zia ur; Khan, Rashid; Chen, Shuangming; Wu, Xiaojun; Song, Li

2018-04-01

Two dimensional (2D) layered magnetic materials have obtained much attention due to their intriguing properties with a potential application in the field of spintronics. Herein, room-temperature ferromagnetism with 0.2 emu g‑1 magnetic moment is realized in Fe-doped ZrS2 single crystals of millimeter size, in comparison with diamagnetic behaviour in ZrS2. The electron paramagnetic resonance spectroscopy reveals that 5.2wt% Fe-doping ZrS2 crystal exhibit high spin value of g-factor about 3.57 at room temperature also confirmed this evidence, due to the unpaired electrons created by doped Fe atoms. First principle static electronic and magnetic calculations further confirm the increased stability of long range ferromagnetic ordering and enhanced magnetic moment in Fe-doped ZrS2, originating from the Fe spin polarized electron near the Fermi level.

Effect of amino acid doping on the growth and ferroelectric properties of triglycine sulphate single crystals

International Nuclear Information System (INIS)

Raghavan, C.M.; Sankar, R.; Mohan Kumar, R.; Jayavel, R.

2008-01-01

Effect of amino acids (L-leucine and isoleucine) doping on the growth aspects and ferroelectric properties of triglycine sulphate crystals has been studied. Pure and doped crystals were grown from aqueous solution by low temperature solution growth technique. The cell parameter values were found to significantly vary for doped crystals. Fourier transform infrared analysis confirmed the presence of functional groups in the grown crystal. Morphology study reveals that amino acid doping induces faster growth rate along b-direction leading to a wide b-plane and hence suitable for pyroelectric detector applications. Ferroelectric domain structure has been studied by atomic force microscopy and hysteresis measurements reveal an increase of coercive field due to the formation of single domain pattern

High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah

2018-05-08

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

The characterization of tungsten disulfide single crystals doped with gold

International Nuclear Information System (INIS)

Dumcenco, D.O.; Huang, Y.S.; Tiong, K.K.; Liang, C.H.; Chen, C.H.

2007-01-01

Single crystals of WS 2 doped with gold (WS 2 :Au) have been grown by the chemical vapour transport method using iodine as a transporting agent. Hall measurements indicate that the samples are p-type in nature. The doping effect of the materials are characterized by conductivity, surface photovoltage and piezo reflectance measurements. The higher conductivity respect to that of the undoped one suggests that more charge carriers are available for conduction in the doped compound. The surface photovoltage spectrum reveals an impurity level located below the A exciton. The direct band-edge excitonic transition energies for WS 2 :Au show redshifts and the broadening parameters of the excitonic transition features increase due to impurity scattering. (authors)

TL and OSL studies on lithium borate single crystals doped with Cu and Ag

International Nuclear Information System (INIS)

Rawat, N.S.; Kulkarni, M.S.; Tyagi, M.; Ratna, P.; Mishra, D.R.; Singh, S.G.; Tiwari, B.; Soni, A.; Gadkari, S.C.; Gupta, S.K.

2012-01-01

Lithium borate (LBO) single crystals doped with Cu and Ag (0.25 mol% each) (Li 2 B 4 O 7 :Cu,Ag) are grown by the Czochralski method. The thermoluminescence readout on Li 2 B 4 O 7 :Cu,Ag crystals showed three glow peaks at∼375, 441 and 516 K for the heating rate of 1 K/s. The thermoluminescence sensitivity of the grown Li 2 B 4 O 7 :Cu,Ag single crystals is found to be 5 times TLD-100 and a linear dose response in the range 1 mGy to 1 kGy. The glow curve deconvolution reveals nearly first order kinetics for all the three peaks with trap depths 0.77, 1.25 and 1.34 eV respectively and corresponding frequency factors 1.6×10 9 , 1.3×10 13 and 6.8×10 11 s −1 . The continuous wave optically stimulated luminescence (CW-OSL) measurements were performed on the LBO:Cu,Ag single crystals using blue light stimulation. The traps responsible for the three thermoluminescence peaks in Li 2 B 4 O 7 :Cu,Ag are found to be OSL sensitive. The qualitative correlation between TL peaks and CW-OSL response is established. The photoluminescence studies show that in case of co-doping of Ag in LBO:Cu the emission at 370 nm in Cu states dominates over the transitions in Ag states implying doping of Ag plays a role as sensitizer when co-doped with Cu and increases overall emission. - Highlights: ► Growth of crack free single crystals of Li2B4O7 :Cu and Ag. ► Study of TL and OSL parameters for Li2B4O7 :Cu and Ag. ► Correlation of OSL with TL peaks. ► Optimization of OSL readout time with respect to residual TL.

Growth of rare-earth doped single crystal yttrium aluminum garnet fibers

Science.gov (United States)

Bera, Subhabrata; Nie, Craig D.; Harrington, James A.; Cheng, Long; Rand, Stephen C.; Li, Yuan; Johnson, Eric G.

2018-02-01

Rare-earth doped single crystal (SC) yttrium aluminum garnet (YAG) fibers have great potential as high-power laser gain media. SC fibers combine the superior material properties of crystals with the advantages of a fiber geometry. Improving processing techniques, growth of low-loss YAG SC fibers have been reported. A low-cost technique that allows for the growth of optical quality Ho:YAG single crystal (SC) fibers with different dopant concentrations have been developed and discussed. This technique is a low-cost sol-gel based method which offers greater flexibility in terms of dopant concentration. Self-segregation of Nd ions in YAG SC fibers have been observed. Such a phenomenon can be utilized to fabricate monolithic SC fibers with graded index.

Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystals

KAUST Repository

Peng, Wei

2017-06-28

Unintentional self-doping in semiconductors through shallow defects is detrimental to optoelectronic device performance. It adversely affects junction properties and it introduces electronic noise. This is especially acute for solution-processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 (n=1, 2, and 3)—over three orders of magnitude lower than those of typical three-dimensional hybrid perovskites—by analyzing their conductivity behavior. We propose that crystallization of hybrid perovskites containing large organic cations suppresses defect formation and thus favors a low self-doping level. To exemplify the benefits of this effect, we demonstrate extraordinarily high light-detectivity (1013 Jones) in (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 photoconductors due to the reduced electronic noise, which makes them particularly attractive for the detection of weak light signals. Furthermore, the low self-doping concentration reduces the equilibrium charge carrier concentration in (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1, advantageous in the design of p-i-n heterojunction solar cells by optimizing band alignment and promoting carrier depletion in the intrinsic perovskite layer, thereby enhancing charge extraction.

Studies on transport properties of copper doped tungsten diselenide single crystals

Science.gov (United States)

Deshpande, M. P.; Parmar, M. N.; Pandya, Nilesh N.; Chaki, Sunil; Bhatt, Sandip V.

2012-02-01

During recent years, transition metal dichalcogenides of groups IVB, VB and VIB have received considerable attention because of the great diversity in their transport properties. 2H-WSe 2 (Tungsten diselenide) is an interesting member of the transition metal dichalcogenide (TMDC's) family and known to be a semiconductor useful for photovoltaic and optoelectronic applications. The anisotropy usually observed in this diamagnetic semiconductor material is a result of the sandwich structure of Se-W-Se layers interacting with each other, loosely bonded by the weak Van der Waals forces. Recent efforts in studying the influence of the anisotropic electrical and optical properties of this layered-type transition metal dichalcogenides have been implemented by doping the samples with different alkali group elements. Unfortunately, little work is reported on doping of metals in WSe 2. Therefore, it is proposed in this work to carry out a systematic growth of single crystals of WSe 2 by doping it with copper in different proportions i.e. Cu xWSe 2 ( x=0, 0.5, 1.0) by direct vapour transport technique. Transport properties like low and high temperature resistivity measurements, high pressure resistivity, Seebeck coefficient measurements at low temperature and Hall Effect at room temperature were studied in detail on all these samples. These measurements show that tungsten diselenide single crystals are p-type whereas doped with copper makes it n-type in nature. The results obtained and their implications are discussed in this paper.

Thickness-dependent photovoltaic effects in miscut Nb-doped SrTiO3 single crystals

International Nuclear Information System (INIS)

Yue Zengji; Zhao Kun; Zhao Songqing; Lu Zhiqing; Li Xiaoming; Ni Hao; Wang Aijun

2010-01-01

The photovoltaic effects of Nb-doped SrTiO 3 single crystals with different thicknesses were investigated under the illumination of ultraviolet pulsed lasers. The peak photovoltage increased and then decreased quickly with the decrease in crystal thickness, and a maximum photovoltage occurred for the 180 μm-thick crystal. The photovoltaic response time decreased monotonically with decreasing crystal thickness. The present results suggested the promising potential of reducing crystal thickness in high sensitivity detectors with fast response.

Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

Energy Technology Data Exchange (ETDEWEB)

Podkopaev, O. I. [Joint-Stock Company “Germanium” (Russian Federation); Shimanskiy, A. F., E-mail: shimanaf@mail.ru [Siberian Federal University (Russian Federation); Kopytkova, S. A.; Filatov, R. A. [Joint-Stock Company “Germanium” (Russian Federation); Golubovskaya, N. O. [Siberian Federal University (Russian Federation)

2016-10-15

The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

International Nuclear Information System (INIS)

Podkopaev, O. I.; Shimanskiy, A. F.; Kopytkova, S. A.; Filatov, R. A.; Golubovskaya, N. O.

2016-01-01

The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

Optical properties of tungsten disulfide single crystals doped with gold

International Nuclear Information System (INIS)

Dumcenco, D.O.; Hsu, H.P.; Huang, Y.S.; Liang, C.H.; Tiong, K.K.; Du, C.H.

2008-01-01

Single crystals of WS 2 doped with gold have been grown by the chemical vapour transport method using iodine as a transporting agent. X-ray diffraction (XRD) pattern analysis revealed presence of mixed three-layer rhombohedral (3R) and two-layer hexagonal (2H) polytypes for the doped crystals while the undoped one shows only 2H form. Hall measurements indicate that the samples are p-type in nature. The doping effects of the materials are characterized by surface photovoltage (SPV), photoconductivity (PC) and piezoreflectance (PzR) measurements. Room temperature SPV and PC spectra reveal a feature located at ∼60 meV below the A exciton and has been tentatively assigned to be an impurity level caused by Au dopant. Excitonic transition energies of the A, B, d and C excitons detected in PzR spectra show red shift due to the presence of a small amount of Au and the broadening parameters of the excitonic transition features increase due to impurity scattering. The values of the parameters that describe the electron (exciton)-phonon interaction of excitonic transitions of A-B are about two times larger than that of d-C excitonic pairs. The possible assignments of the different origins of A-B and d-C excitonic pairs have been discussed

Coloration dependence in the thermoluminescence properties of the double doped NaCl single crystals under gamma irradiation

International Nuclear Information System (INIS)

Sanchez-Mejorada, G.; Gelover-Santiago, A.L.; Frias, D.

2006-01-01

In this work the behaviour of calcium manganese doped NaCl single crystals under gamma irradiation is reported. Various single crystals of NaCl doped with Ca and Mn have been irradiated at different doses with ionising radiation. The production of defects has been correlated to the increase in the intensity of the thermo luminescent glow curve as a function of doses. The glow curves intensity as a function of doses shows the potential use of these materials as dosimeters. Optical properties of such crystals after irradiation with gamma rays have also been studied; results have shown their potentiality as a good detector and optical store memory devices. Since the creations of colour centres by photons with energy less than the band gap energy has been detected also in ns 2 -ion doped alkali halides. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Pyroelectric properties of phosphoric acid-doped TGS single crystals

International Nuclear Information System (INIS)

Saxena, Aparna; Fahim, M; Gupta, Vinay; Sreenivas, K

2003-01-01

Pyroelectric properties of phosphoric acid (H 3 PO 4 )-doped triglycine sulfate (TGSP) single crystals grown from solutions containing 0.1-0.5 mol of H 3 PO 4 have been studied. Incorporation of H 3 PO 4 into the crystal lattice is found to induce an internal bias field (E b ) and is observed through the presence of a sustained polarization and pyroelectricity beyond the transition temperature. The internal bias field has been estimated theoretically by fitting the experimentally measured data on temperature dependence of the pyroelectric coefficient (λ), dielectric constant (ε') and polarization (P). A high E b value in the range 9 x 10 3 -15.5 x 10 4 V m -1 is obtained for crystals grown with 0.1-0.5 mol of H 3 PO 4 in the solution, and a specific concentration of 0.2-0.25 mol of H 3 PO 4 in the solution during crystal growth is found to be optimum for a high figure of merit for detectivity, F d = 428 μC m -2 K -1

Dielectric Losses and Charge Transfer in Antimony-Doped TlGaS2 Single Crystal

Science.gov (United States)

Asadov, S. M.; Mustafaeva, S. N.

2018-03-01

Effect of semimetallic antimony (0.5 mol % Sb) on the dielectric properties and ac-conductivity of TlGaS2-based single crystals grown by the Bridgman-Stockbarger method has been studied. The experimental results on the frequency dispersion of dielectric coefficients and the conductivity of TlGa0.995Sb0.005S2 single crystals allowed the revealing of the dielectric loss nature, the charge transfer mechanism, and the estimation of the parameters of the states localized in the energy gap. The antimony-doping of the TlGaS2 single crystal leads to an increase in the density of states near the Fermi level and a decrease in the average time and average distance of hopes.

Influence of MgSO{sub 4} doping on the properties of zinc tris–thiourea sulphate (ZTS) single crystals

Energy Technology Data Exchange (ETDEWEB)

Selvapandiyan, M., E-mail: mselvapandiyan@rediffmail.com [Department of Physics, Sri Vidya Mandir Arts and Science College, Uthangarai 635 207 (India); Arumugam, J. [Department of Physics, Sri Vidya Mandir Arts and Science College, Uthangarai 635 207 (India); Sundaramoorthi, P. [Department of Physics, Thiruvalluvar Government Arts College, Rasipuram 637 401 (India); Sudhakar, S. [CSIR–National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110 012 (India)

2013-12-15

Highlights: •The influence of MgSO{sub 4} doping on the properties of ZTS single crystals grown at room temperature. •Thermal stability of the crystals increased with incorporation of Mg atom. •Energy band gap was estimated from UV–vis spectra. •ZTS is a potential material for frequency conversion. •Both pure and doped ZTS crystals are belonging to category of typical insulating materials. -- Abstract: The influence of MgSO{sub 4} doping on the properties of zinc tris–thiourea sulphate single crystals grown at room temperature by slow evaporation solution growth technique was studied. Powder XRD analysis confirmed the orthorhombic crystal structure with noncentrosymmetric space group Pca2{sub 1}. The mechanical properties of the grown crystals were analysed by Vicker’s microhardness method. Functional groups present in the materials were identified by FTIR spectral analysis in the range between 4000 and 400 cm{sup −1}. The UV–Vis spectrum indicates that the UV cut-off wavelength of the crystals has less than 297 nm. The thermal stability of the grown crystals was determined with the aid of thermo-gravimetric analysis (TGA) and differential scanning calorimetry (DSC). Second order nonlinear optical behaviour of the grown crystals have been confirmed by Kurtz powder second harmonic generation (SHG) test.

Oxygen vacancies effect on ionic conductivity and relaxation phenomenon in undoped and Mn doped PZN-4.5PT single crystals

International Nuclear Information System (INIS)

Kobor, Diouma; Guiffard, Benoit; Lebrun, Laurent; Hajjaji, Abdelowahed; Guyomar, Daniel

2007-01-01

AC-impedance spectroscopic studies in the temperature range 550-700 deg. C are carried out on undoped and Mn doped PZN-PT single crystals grown by the flux method. The variation of dielectric permittivity with temperature at different frequencies shows normal ferroelectric and relaxor-like dependence for the doped and undoped crystals, respectively. Temperature-dependent spectroscopic modulus plots reveal a much broader peak for PZN-4.5PT + 1%Mn compared with that for PZN-4.5PT, which is different from the dielectric behaviour of the doped one. Complex modulus imaginary part (Z-prime) versus real part (Z') plots fit well with one semicircle thus indicating only bulk contribution. The relaxation observed in the spectroscopic plots was assigned to mobile relaxor species such as oxygen vacancies and ions. No such relaxation could be observed for PZN-4.5PT + 1%Mn in the dielectric measurements. For both undoped and Mn doped crystals, the conduction behaviour was modelled by the universal dynamic response equation and by the NTC (negative temperature coefficient) materials resistance-temperature behaviour. A large difference in behaviour was found between the two single crystals such as the thermistor coefficients and the activation energy values, which could explain the increase in the thermal stability observed in the Mn doped PZN-PT single crystals by many studies

Spontaneous and stimulated emission in Sm3+-doped YAl3(BO3)4 single crystal

International Nuclear Information System (INIS)

Ryba-Romanowski, Witold; Lisiecki, Radosław; Beregi, Elena; Martín, I.R.

2015-01-01

Single crystals of YAl 3 (BO 3 ) 4 doped with trivalent samarium were grown by the top-seeded high temperature solution method and their absorption and emission spectra were investigated. Optical pumping into prominent absorption band around 405 nm feeds the 4 G 5/2 metastable level giving rise to intense visible luminescence distributed in several spectral lines with the most intense line around 600 nm characterized by a branching ratio of 0.42 and peak emission cross section of 0.25×10 −20 cm 2 . Optical amplification at 600 nm with a gain coefficient of 2.9 cm −1 was achieved during a pump-and-probe experiment. - Highlights: • YAB:Sm crystal grown by the top-seeded high temperature solution method. • Spectroscopic qualities relevant for visible laser operation. • YAB:Sm single crystal used in a pump-and-probe experiment. • Optical amplification properties of samarium doped YAl 3 (BO 3 ) 4

Pyroelectric properties of phosphoric acid-doped TGS single crystals

Energy Technology Data Exchange (ETDEWEB)

Saxena, Aparna; Fahim, M; Gupta, Vinay; Sreenivas, K [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2003-12-21

Pyroelectric properties of phosphoric acid (H{sub 3}PO{sub 4})-doped triglycine sulfate (TGSP) single crystals grown from solutions containing 0.1-0.5 mol of H{sub 3}PO{sub 4} have been studied. Incorporation of H{sub 3}PO{sub 4} into the crystal lattice is found to induce an internal bias field (E{sub b}) and is observed through the presence of a sustained polarization and pyroelectricity beyond the transition temperature. The internal bias field has been estimated theoretically by fitting the experimentally measured data on temperature dependence of the pyroelectric coefficient ({lambda}), dielectric constant ({epsilon}') and polarization (P). A high E{sub b} value in the range 9 x 10{sup 3}-15.5 x 10{sup 4} V m{sup -1} is obtained for crystals grown with 0.1-0.5 mol of H{sub 3}PO{sub 4} in the solution, and a specific concentration of 0.2-0.25 mol of H{sub 3}PO{sub 4} in the solution during crystal growth is found to be optimum for a high figure of merit for detectivity, F{sub d} = 428 {mu}C m{sup -2} K{sup -1}.

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.

2017-12-01

Cd-rich composition and group-V element doping are of interest for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe, but the critical details concerning point defects are not yet fully established. Herein, we report on the properties of arsenic doped CdTe single crystals grown from Cd solvent by the travelling heater method. The photoluminescence spectra and activation energy of 74 ± 2 meV derived from the temperature-dependent Hall effect are consistent with AsTe as the dominant acceptor. Doping in the 1016 to 1017/cm3 range is achieved for measured As concentrations between 1016 and 1020/cm3 with the highest doping efficiency of 40% occurring near 1017 As/cm3. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Additionally, quenching experiments reveal at least two mechanisms of increased p-type doping in the dark, one decaying over 2-3 weeks and the other persisting for at least 2 months. These results provide essential insights for the application of As-doped CdTe in thin film solar cells.

Growth and properties of oxygen- and ion-doped Bi2Sr2CaCu2O8+δ single crystals

International Nuclear Information System (INIS)

Mitzi, D.B.; Lombardo, L.W.; Kapitulnik, A.; Laderman, S.S.; Jacowitz, R.D.

1990-01-01

A directional solidification method for growing large single crystals in the Bi 2 Sr 2 CaCu 2 O 8+δ system is reported. Ion doping, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Doped and undoped crystals have been characterized using microprobe analysis, x-ray diffraction, thermogravimetric analysis, and magnetic and Hall measurements. Ion doping results in little change of the superconducting transition for substitution levels below 20--25%, while beyond this level the Meissner signal broadens and the low-temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals provide evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90 (as made) to 77 K (oxygen pressure annealed), while the carrier concentrations, as determined from Hall effect measurements, increase from n=3.1(3)x10 21 cm -3 (0.34 holes per Cu site) to 4.6(3)x10 21 cm -3 (0.50 holes per Cu site)

Luminescence of single crystals of manganese doped zinc indium binary sulfides

International Nuclear Information System (INIS)

Arama, Efim; Vovc, Victor; Gheorghita, Eugene Iv.; Pintea, Valentina

2013-01-01

Radiative recombination spectra of Mn-doped ZnIn 2 S 4 single crystals have been analyzed in the work. The emission spectra interval close to its maximum (1,91±0,2) eV contains a number of the special features which were identified by us as intra-center transitions. We attribute the special features observed on the complex emission spectra to this type of transition by their decomposition into simple lines, using Alentsev -Foch method. (authors)

Scintillation and optical properties of Ce{sup 3+}-doped CaGdAl{sub 3}O{sub 7} single crystals

Energy Technology Data Exchange (ETDEWEB)

Mori, Masaki, E-mail: masaki.mori.mz4@ms.naist.jp [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Nakauchi, Daisuke; Okada, Go [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Fujimoto, Yutaka [Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); Kawaguchi, Noriaki [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Koshimizu, Masanori [Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); Yanagida, Takayuki [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan)

2017-06-15

The single crystals of 0, 0.6, 1, 1.6 and 2 mol% Ce doped CaGdAl{sub 3}O{sub 7} (Ce:CGAM) were grown by the Floating Zone method, and investigated on photoluminescence (PL) and scintillation properties. In the PL spectra, a broad emission appeared over 380–500 nm under 280 and 360 nm excitations with the quantum yield of 33.8–38.8%. Under a vacuum ultraviolet excitation (90 nm) using a synchrotron source, non-doped CGAM single crystal showed broad emissions over 250–650 nm. The PL decay time profiles followed a monotonic exponential decay with a decay time constant of around 33 ns. The scintillation spectra were similar to those of PL. All of the samples exhibited a clear photoabsorption peak and Compton edge in the pulse height spectra measured under {sup 137}Cs γ-ray irradiation, and the absolute scintillation light yield (LY) was highest for the 2% Ce-doped sample with the value of 3300±300 ph/MeV. The scintillation decay profiles were approximated by a third order exponential decay function, and the extracted decay time of Ce{sup 3+} emission component was around 36–44 ns. Among all the samples, 2%Ce:CGAM single crystal sample showed the best afterglow level as a scintillator under X-ray irradiation. - Highlights: •Ce{sup 3+}-doped CaGdAl{sub 3}O{sub 7} single crystals were synthesized by the FZ method. •Optical and scintillation properties of Ce{sup 3+}-doped CaGdAl{sub 3}O{sub 7} were investigated. •Photoabsorption peak in a pulse height spectrum was clearly observed under γ-rays.

Single-Crystal Growth of Cl-Doped n-Type SnS Using SnCl2 Self-Flux.

Science.gov (United States)

Iguchi, Yuki; Inoue, Kazutoshi; Sugiyama, Taiki; Yanagi, Hiroshi

2018-06-05

SnS is a promising photovoltaic semiconductor owing to its suitable band gap energy and high optical absorption coefficient for highly efficient thin film solar cells. The most significant carnage is demonstration of n-type SnS. In this study, Cl-doped n-type single crystals were grown using SnCl 2 self-flux method. The obtained crystal was lamellar, with length and width of a few millimeters and thickness ranging between 28 and 39 μm. X-ray diffraction measurements revealed the single crystals had an orthorhombic unit cell. Since the ionic radii of S 2- and Cl - are similar, Cl doping did not result in substantial change in lattice parameter. All the elements were homogeneously distributed on a cleaved surface; the Sn/(S + Cl) ratio was 1.00. The crystal was an n-type degenerate semiconductor with a carrier concentration of ∼3 × 10 17 cm -3 . Hall mobility at 300 K was 252 cm 2 V -1 s -1 and reached 363 cm 2 V -1 s -1 at 142 K.

Origin of the defects-induced ferromagnetism in un-doped ZnO single crystals

Science.gov (United States)

Zhan, Peng; Xie, Zheng; Li, Zhengcao; Wang, Weipeng; Zhang, Zhengjun; Li, Zhuoxin; Cheng, Guodong; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2013-02-01

We clarified, in this Letter, that in un-doped ZnO single crystals after thermal annealing in flowing argon, the defects-induced room-temperature ferromagnetism was originated from the surface defects and specifically, from singly occupied oxygen vacancies denoted as F+, by the optical and electrical properties measurements as well as positron annihilation analysis. In addition, a positive linear relationship was observed between the ferromagnetism and the F+ concentration, which is in support with the above clarification.

High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

International Nuclear Information System (INIS)

Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, L.A.; Watkins, S.P.

2016-01-01

Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. Here we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I 10 bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I 10 line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I 10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn Zn double donor compensated by an unknown single acceptor.

Growth and characterization of air annealing Tb-doped YAG:Ce single crystal for white-light-emitting diode

International Nuclear Information System (INIS)

Gong, Maogao; Xiang, Weidong; Liang, Xiaojuan; Zhong, Jiasong; Chen, Daqin; Huang, Jun; Gu, Guorui; Yang, Cheng; Xiang, Run

2015-01-01

Highlights: • We report preparation of transparent Ce,Tb:YAG single crystal by Czochralski method. • The effect of annealing on Ce,Tb:YAG single crystal had been investigated. • The Ce,Tb:YAG single crystal after annealing exhibited better optical performance. • The Ce,Tb:YAG single crystal could be used as an ideal candidate for WLED. - Abstract: We report the preparation of transparent Ce and Tb co-doped Y 3 Al 5 O 12 single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet–visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What’s more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application

Growth and characterization of air annealing Tb-doped YAG:Ce single crystal for white-light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Gong, Maogao [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Xiang, Weidong, E-mail: xiangweidong001@126.com [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Liang, Xiaojuan [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Zhong, Jiasong; Chen, Daqin [College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Huang, Jun; Gu, Guorui; Yang, Cheng; Xiang, Run [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China)

2015-08-05

Highlights: • We report preparation of transparent Ce,Tb:YAG single crystal by Czochralski method. • The effect of annealing on Ce,Tb:YAG single crystal had been investigated. • The Ce,Tb:YAG single crystal after annealing exhibited better optical performance. • The Ce,Tb:YAG single crystal could be used as an ideal candidate for WLED. - Abstract: We report the preparation of transparent Ce and Tb co-doped Y{sub 3}Al{sub 5}O{sub 12} single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet–visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What’s more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application.

Synthesis, characterization and anti-microbial activity of pure, Cu2+ and Cd2+ doped organic NLO l-arginine trifluoroacetate single crystals

Science.gov (United States)

Prasanyaa, T.; Haris, M.; Jayaramakrishnan, V.; Amgalan, M.; Mathivanan, V.

2013-10-01

Optically transparent Cu2+ and Cd2+ doped l-arginine trifluoroacetate (LATF) single crystals were grown from its aqueous solution using the slow solvent evaporation technique. The grown crystals were characterized by powder x-ray diffraction to confirm the monoclinic crystal structure. The percentage of transmittance measured using the ultraviolet-visible-near infrared spectrophotometer was found to be more than 80% for doped crystals. The functional group analysis of the grown crystals has been made by Fourier transform infrared spectroscopy. Thermogravimetric/differential thermal analysis was performed for the grown crystals. An atomic absorption study was carried out to determine the presence of Cu2+ and Cd2+. The hardness of the grown crystals was assessed and the results show a significant variation in the hardness value between the pure and doped LATF crystals. The second harmonic generation measurements show that Cu2+ doped LATF is 2.8 times greater and Cd2+ doped is 2.6 times greater than KDP. The anti-bacterial and anti-fungal activities of the title compound were performed using the disc diffusion method against standard bacteria Escherichia coli, Xanthomonas oryzae and against the fungus Aspergillus niger and Aspergillus flavus.

Synthesis, characterization and anti-microbial activity of pure, Cu2+ and Cd2+ doped organic NLO l-arginine trifluoroacetate single crystals

International Nuclear Information System (INIS)

Prasanyaa, T; Haris, M; Amgalan, M; Mathivanan, V; Jayaramakrishnan, V

2013-01-01

Optically transparent Cu 2+ and Cd 2+ doped l-arginine trifluoroacetate (LATF) single crystals were grown from its aqueous solution using the slow solvent evaporation technique. The grown crystals were characterized by powder x-ray diffraction to confirm the monoclinic crystal structure. The percentage of transmittance measured using the ultraviolet–visible–near infrared spectrophotometer was found to be more than 80% for doped crystals. The functional group analysis of the grown crystals has been made by Fourier transform infrared spectroscopy. Thermogravimetric/differential thermal analysis was performed for the grown crystals. An atomic absorption study was carried out to determine the presence of Cu 2+ and Cd 2+ . The hardness of the grown crystals was assessed and the results show a significant variation in the hardness value between the pure and doped LATF crystals. The second harmonic generation measurements show that Cu 2+ doped LATF is 2.8 times greater and Cd 2+ doped is 2.6 times greater than KDP. The anti-bacterial and anti-fungal activities of the title compound were performed using the disc diffusion method against standard bacteria Escherichia coli, Xanthomonas oryzae and against the fungus Aspergillus niger and Aspergillus flavus. (paper)

Scintillation properties of Er-doped Y3Al5O12 single crystals

International Nuclear Information System (INIS)

Yamaji, Akihiro; Ogino, Hiraku; Fujimoto, Yutaka; Suzuki, Akira; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Yoshikawa, Akira

2013-01-01

Er-doped Y 3 Al 5 O 12 single crystals with different Er concentrations of 0.1, 1.0, 10, 30, and 50% were grown by the micro-pulling down method. There were several absorption lines due to the Er 3+ 4f-4f transitions in the transmittance spectra and these lines correspond to the transitions from the ground state of 4 I 15/2 to the excited states. The photo- and radio-luminescence spectra showed Er 3+ 4f-4f emissions. Relative light yield under 5.5 MeV alpha-ray irradiation of Er 0.1%:Y 3 Al 5 O 12 was estimated to be 63% of that of Bi 4 Ge 3 O 12 . -- Highlights: •Er doped Y 3 Al 5 O 12 single crystal scintillators were grown with different Er concentrations. •Optical properties associated with 4f-4f transition were evaluated. •Radio luminescence spectra measurements were performed under 5.5 MeV alpha-ray irradiation. •The highest light yield was estimated to be 63% of that of Bi 4 Ge 3 O 12 under 5.5 MeV alpha-ray irradiation

Growth and properties of oxygen- and ion-doped Bi2Sr2CaCu2O8+δ single crystals

Science.gov (United States)

Mitzi, D. B.; Lombardo, L. W.; Kapitulnik, A.; Laderman, S. S.; Jacowitz, R. D.

1990-04-01

A directional solidification method for growing large single crystals in the Bi2Sr2CaCu2O8+δ system is reported. Ion doping, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Doped and undoped crystals have been characterized using microprobe analysis, x-ray diffraction, thermogravimetric analysis, and magnetic and Hall measurements. Ion doping results in little change of the superconducting transition for substitution levels below 20-25%, while beyond this level the Meissner signal broadens and the low-temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals provide evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90 (as made) to 77 K (oxygen pressure annealed), while the carrier concentrations, as determined from Hall effect measurements, increase from n=3.1(3)×1021 cm-3 (0.34 holes per Cu site) to 4.6(3)×1021 cm-3 (0.50 holes per Cu site). No degradation of the Meissner transition or other indications of inhomogeneity or phase segregation with doping are noted, suggesting that oxygen-doped Bi2Sr2CaCu2O8+δ is a suitable system for pursuing doping studies. The decrease in Tc with concentration for 0.34<=n<=0.50 indicates that a high-carrier-concentration regime exists in which Tc decreases with n and suggests that this decrease does not arise from material inhomogeneity or other materials problems. An examination of the variation of Tc with the density of states and lattice constants for all of the doped and undoped superconducting samples considered here indicates that changes in Tc with doping are primarily affected by changes in the density of states (or carrier concentration) rather than by structural variation induced by the doping.

Mechanical properties of pure and doped InP single crystals under concentrated loading

International Nuclear Information System (INIS)

Boyarskaya, Yu.S.; Grabko, D.Z.; Medinskaya, M.I.; Palistrant, N.A.

1997-01-01

The mechanical properties of pure and doped (Fe, Zn, Sn) InP single crystals were investigated in the temperature interval from 293 to 600 K. It was shown that impurity hardening (the microhardness increase) was more pronounced at elevated temperatures than at 293 K. This is conditioned by braking of the moving dislocations with impurities which is more observed in the the high temperature region. The obvious anisotropy of the scratch hardness was revealed at room temperature for the (001) face of crystals under investigation. This anisotropy decreased sharply in increasing the temperature from 293 to 600 K

Yb-doped rod-type photonic crystal fibers for single-mode amplification

DEFF Research Database (Denmark)

Poli, Frederica; Passaro, Davide; Cucinotta, Annamaria

2009-01-01

The competition among the guided modes in rod-type photonic crystal fibers with a low refractive index ring in the Yb-doped core is investigated with an amplifier model to demonstrate the effective higher-order mode suppression.......The competition among the guided modes in rod-type photonic crystal fibers with a low refractive index ring in the Yb-doped core is investigated with an amplifier model to demonstrate the effective higher-order mode suppression....

Growth and luminescent properties of the Ce, Pr doped NaCl single crystals grown by the modified micro-pulling-down method

International Nuclear Information System (INIS)

Yokota, Yuui; Yanagida, Takayuki; Fujimoto, Yutaka; Nikl, Martin; Yoshikawa, Akira

2010-01-01

We have investigated luminescent properties of nondope, Ce and Pr doped NaCl [nondope NaCl, Ce:NaCl, Pr:NaCl] single crystals grown by a modified micro-pulling-down method with a removable chamber system. Nondope, Ce 1% and Pr 1% doped NaCl crystals with a single phase of NaCl structure were obtained and the crystals indicated general crystal quality by the X-ray rocking curve measurement. For the nondope NaCl and Pr:NaCl crystals, the transmittance spectra indicated almost more than 60% in the wavelength from 200 to 800 nm and an absorption of Ce 3+ ion was observed in the transmittance spectrum of Ce:NaCl crystal. The emission spectrum originated from Ce 3+ 5d-4f transition appeared around 300 nm in the photoluminescence spectrum and the decay time was 19.7 ns.

Scintillation and optical properties of Sn-doped Ga2O3 single crystals

Science.gov (United States)

Usui, Yuki; Nakauchi, Daisuke; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

2018-06-01

Sn-doped Ga2O3 single crystals were synthesized by the Floating Zone (FZ) method. In photoluminescence (PL) under the excitation wavelength of 280 nm, we observed two types of luminescence: (1) defect luminescence due to recombination of the donor/acceptor pairs which appears at 430 nm and (2) the nsnp-ns2 transitions of Sn2+ which appear at 530 nm. The PL and scintillation decay time curves of the Sn-doped samples were approximated by a sum of exponential decay functions. The faster two components were ascribed to the defect luminescence, and the slowest component was owing to the nsnp-ns2 transitions. In the pulse height spectrum measurements under 241Am α-rays irradiation, all the Sn-doped Ga2O3 samples were confirmed to show a full energy absorption peak but the undoped one. Among the present samples, the 1% Sn-doped sample exhibited the highest scintillation light yield (1,500 ± 150 ph/5.5 MeV-α).

Scintillation properties of YAlO3 doped with Lu and Nd perovskite single crystals

Science.gov (United States)

Akatsuka, Masaki; Usui, Yuki; Nakauchi, Daisuke; Kato, Takumi; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

2018-05-01

YAlO3 (YAP) single crystals doped with Lu and Nd were grown by the Floating Zone (FZ) method to evaluate their scintillation properties particularly emissions in the near-infrared (NIR) range. The Nd concentration was fixed to 0 or 1 mol% while the Lu concentration was varied from 0 to 30%. When X-ray was irradiated, the scintillation of Nd-doped samples was observed predominantly at 1064 nm due to 4F3/2 → 4I11/2 transition of Nd3+. In contrast, a weak emission around 700 nm appeared in the samples doped with only Lu, and the emission origin was attributed to defect centers. In the Nd3+-doped samples, the decay time was 94-157 μs due to the 4f-4f transitions of Nd3+ whereas the Lu-doped samples showed signal with the decay time of 1.45-1.54 ms. The emission origin of the latter signal was attributed to the perovskite lattice defect.

Growth and properties of oxygen doped Bi2Sr2CaCu2O8+δ single crystals

International Nuclear Information System (INIS)

Kapitulnik, A.; Mitzi, D.B.

1990-01-01

This paper reports results on oxygen doped single crystals in the Bi 2 Sr 2 CaCu 2 O 8+δ system grown by a directional solidification method. Annealing of as made crystals in increasing partial pressure of oxygen reversibly depresses the superconducting transition temperature from 90K (as made) to 77K (oxygen pressure annealed). Magnetic and photoemission properties of these crystals will be discussed

Coloration of chromium-doped yttrium aluminum garnet single-crystal fibers using a divalent codopant

International Nuclear Information System (INIS)

Tissue, B.M.; Jia, W.; Lu, L.; Yen, W.M.

1991-01-01

We have grown single-crystal fibers of Cr:YAG and Cr,Ca:YAG under oxidizing and reducing conditions by the laser-heated-pedestal-growth method. The Cr:YAG crystals were light green due to Cr 3+ in octahedral sites, while the Cr,Ca:YAG crystals were brown. The presence of the divalent codopant was the dominant factor determining the coloration in these single-crystal fibers, while the oxidizing power of the growth atmosphere had little effect on the coloration. The Cr,Ca:YAG had a broad absorption band centered at 1.03 μm and fluoresced from 1.1 to 1.7 μm, with a room-temperature lifetime of 3.5 μs. The presence of both chromium and a divalent codopant were necessary to create the optically-active center which produces the near-infrared emission. Doping with only Ca 2+ created a different coloration with absorption in the blue and ultraviolet. The coloration in the Cr,Ca:YAG is attributed to Cr 4+ and is produced in as-grown crystals without irradiation or annealing, as has been necessary in previous work

Growth and electrical properties of (Mn,F) co-doped 0.92Pb(Zn 1/3Nb 2/3)O 3-0.08PbTiO 3 single crystal

Science.gov (United States)

Zhang, Shujun; Lebrun, Laurent; Randall, Clive A.; Shrout, Thomas R.

2004-06-01

The growth and characterization of (Mn,F) doped Pb(Zn 1/3Nb 2/3)O 3-PbTiO 3 (PZNT) single crystals are reported in this paper. The typical single crystal obtained is up to 30 mm size with dark brown color. The crystal lattice parameters of doped PZNT crystal are slightly decreased compared to the pure one. The room temperature dielectric permittivity along direction is about 6000, which is lower than that of the pure PZNT8 because of the dopants. The Curie temperature of the doped crystal is about 180°C while the ferroelectric phase transition temperature is around 100°C, which are higher than those of the pure PZNT8 single crystal. The remnant polarization and coercive field of oriented doped crystal measured at 1 Hz and 10 kV/cm field are about 27 μC/cm 2 and 4.2 kV/cm, respectively. The room temperature mechanical quality factor is ˜300. Piezoelectric coefficient of oriented doped crystal is higher than 3500 pC/N and the longitudinal electromechanical coupling factor is larger than 93%. The piezoelectric properties of doped PZNT single crystal with temperature and orientations are also reported in this paper. The valence state of the manganese dopant was determined by electron spin resonance, indicating no Mn 4+ in the crystals, suggesting the valence of manganese ions in PZNT crystals may be 2+, which acts as a hardener, stabilizes the domain wall and pins the domain wall motion, on the other hand, the dopant will enter Ti 4+ position, shifting the crystal composition to higher PT content.

Growth and luminescent properties of the Ce, Pr doped NaCl single crystals grown by the modified micro-pulling-down method

Energy Technology Data Exchange (ETDEWEB)

Yokota, Yuui, E-mail: y-yokota@tagen.tohoku.ac.j [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan); Yanagida, Takayuki; Fujimoto, Yutaka [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan); Nikl, Martin [Institute of Physics, Academy of Sciences of the Czech Republic/6253, Prague (Czech Republic); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University/2-1-1, Katahira, Aoba-ku, Sendai (Japan)

2010-03-15

We have investigated luminescent properties of nondope, Ce and Pr doped NaCl [nondope NaCl, Ce:NaCl, Pr:NaCl] single crystals grown by a modified micro-pulling-down method with a removable chamber system. Nondope, Ce 1% and Pr 1% doped NaCl crystals with a single phase of NaCl structure were obtained and the crystals indicated general crystal quality by the X-ray rocking curve measurement. For the nondope NaCl and Pr:NaCl crystals, the transmittance spectra indicated almost more than 60% in the wavelength from 200 to 800 nm and an absorption of Ce{sup 3+} ion was observed in the transmittance spectrum of Ce:NaCl crystal. The emission spectrum originated from Ce{sup 3+} 5d-4f transition appeared around 300 nm in the photoluminescence spectrum and the decay time was 19.7 ns.

Growth and characterization of magnesium chloride and lanthanum chloride doped strontium tartrate crystals - gel method

International Nuclear Information System (INIS)

Kalaiarasi, S.; Jaikumar, D.

2014-01-01

Growth of single crystals of doped strontium tartrate by controlled diffusion of strontium chloride into the silica gel charged with tartaric acid at room temperature is narrated. In this study, we synthesized magnesium chloride (5% and 10%) doped strontium tartrate crystals and Lanthanum chloride (5%, 10% and 15%) doped strontium tartrate crystals are grown. The crystal structure of the compound crystals was confirmed by single crystal X-ray diffraction. The Fourier transform infrared spectrum of pure and doped crystals are recorded and analyzed. The UV-Vis-NIR spectrum analysis reveals that the optical study of the grown crystals. The second harmonic generation efficiency was measured by using Kurtz powder technique with Nd:YAG laser of wavelength 1064 nm. (author)

Effect of manganese doping on PIN-PMN-PT single crystals for high power applications

Science.gov (United States)

Sahul, Raffi

multitude of properties that are useful for various specified applications. The unique properties and configurations arise from the large anisotropy of the single crystalline materials and various polarization rotation mechanisms that are associated with these multi-domain configurations. This dissertation is focused on the properties of manganese doped PIN-PMN-PT ternary single crystals in the rhombohedral phase. By poling them in either [001]c, [011]c, or [111]c, 4R, 2R or 1R domain configuration can be achieved respectively. Longitudinal vibration mode, d 33, or k33 is the most useful mode from 4R configuration. The "2R" domain state is obtained by poling the rhombohedral phase crystal along [011]c crystallographic direction. Investigation of "2R" Mn:PIN-PMN-PT single crystals and their properties lead to unique resonance modes (d32, "2R d15", and d36') that are very useful and relevant to practical applications. Considering the large anisotropy and various symmetries exhibited by these crystals, full set of dielectric, piezoelectric, and elastic properties are extremely critical to understand different modes and their overall behavior in devices. Inconsistencies in full set of properties may be caused by complex methods involved in performing characterization measurements and also inhomogeneity among samples used for the measurements. Due to the large number of coefficients that need to be determined for full property material data, a methodology combining resonance and ultrasound methods is the most widely used technique for consistent measurement of full set properties for these materials. Full property measurements (elastic, dielectric, and piezoelectric) for the "2R" Mn:PIN-PMN-PT single crystal poled into orthorhombic mm2 macroscopic symmetry ([011]c poled crystals) and for "4R" configuration ([001]c poled crystals) were conducted and the data was analyzed based on their macroscopic crystallographic symmetry. Full property data was measured for the 1R configuration

Optical and structural characterization of GaSb and Te-doped GaSb single crystals

International Nuclear Information System (INIS)

Tirado-Mejia, L.; Villada, J.A.; Rios, M. de los; Penafiel, J.A.; Fonthal, G.; Espinosa-Arbelaez, D.G.; Ariza-Calderon, H.; Rodriguez-Garcia, M.E.

2008-01-01

Optical and structural properties of GaSb and Te-doped GaSb single crystals are reported herein. Utilizing the photoreflectance technique, the band gap energy for doped samples was obtained at 0.814 eV. Photoluminescence (PL) spectra showed a peak at 0.748 eV that according to this research, belongs to electronic states of pure GaSb and not to the longitudinal optical (LO) phonon replica as has been reported by other authors. Analysis of the full width at half maximum (FWHM) values of X-ray diffraction, as well as micro-Raman peaks showed that the inclusion of Te decreases the crystalline quality

Single-crystal growth of ceria-based materials

International Nuclear Information System (INIS)

Ulbrich, Gregor

2015-01-01

In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.

Single crystal growth and nonlinear optical properties of Nd3+ doped STGS crystal for self-frequency-doubling application

Science.gov (United States)

Chen, Feifei; Wang, Lijuan; Wang, Xinle; Cheng, Xiufeng; Yu, Fapeng; Wang, Zhengping; Zhao, Xian

2017-11-01

The self-frequency-doubling crystal is an important kind of multi-functional crystal materials. In this work, Nd3+ doped Sr3TaGa3Si2O14 (Nd:STGS) single crystals were successfully grown by using Czochralski pulling method, in addition, the nonlinear and laser-frequency-doubling properties of Nd:STGS crystals were studied. The continuous-wave laser at 1064 nm was demonstrated along different physical axes, where the maximum output power was obtained to be 295 mW for the Z-cut samples, much higher than the Y-cut (242 mW) and X-cut (217 mW) samples. Based on the measured refractive indexes, the phase matching directions were discussed and determined for type I (42.5°, 30°) and type II (69.5°, 0°) crystal cuts. As expected, self-frequency-doubling green laser at 529 nm was achieved with output powers being around 16 mW and 12 mW for type I and type II configurations, respectively.

Giant coercivity in ferromagnetic Co doped ZnO single crystal thin film

International Nuclear Information System (INIS)

Loukya, B.; Negi, D.S.; Dileep, K.; Kumar, N.; Ghatak, Jay; Datta, R.

2013-01-01

The origin of ferromagnetism in ZnO doped with transition metal impurities has been discussed extensively and appeared to be a highly controversial and challenging topic in today's solid state physics. Magnetism observed in this system is generally weak and soft. We have grown Co:ZnO up to 30 at% Co in single crystal thin film form on c-plane sapphire. A composition dependent coercivity is observed in this system which reaches peak value at 25 at% Co, the values are 860 Oe and 1149 Oe with applied field along parallel and perpendicular to the film substrate interface respectively. This giant coercivity might pave the way to exploit this material as a magnetic semiconductor with novel logic functionalities. The findings are explained based on defect band itinerant ferromagnetism and its partial interaction with localized d electrons of Co through charge transfer. Besides large coercivity, an increase in the band gap with Co concentration has also been observed along with blue emission peak with long tail confirming the formation of extended point defect levels in the host lattice band gap. - Highlights: • Co doped ZnO ferromagnetic single crystal thin film. • Giant coercivity in Co:ZnO thin film which may help to turn this material into application. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations. • A theoretical proposal is made to explain the observed giant coercivity

Growth of optical-quality anthracene crystals doped with dibenzoterrylene for controlled single photon production

Energy Technology Data Exchange (ETDEWEB)

Major, Kyle D., E-mail: kyle.major11@imperial.ac.uk; Lien, Yu-Hung; Polisseni, Claudio; Grandi, Samuele; Kho, Kiang Wei; Clark, Alex S.; Hwang, J.; Hinds, E. A., E-mail: ed.hinds@imperial.ac.uk [Centre for Cold Matter, Department of Physics, Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2AZ (United Kingdom)

2015-08-15

Dibenzoterrylene (DBT) molecules within a crystalline anthracene matrix show promise as quantum emitters for controlled, single photon production. We present the design and construction of a chamber in which we reproducibly grow doped anthracene crystals of optical quality that are several mm across and a few μm thick. We demonstrate control of the DBT concentration over the range 6–300 parts per trillion and show that these DBT molecules are stable single-photon emitters. We interpret our data with a simple model that provides some information on the vapour pressure of DBT.

Crystal Growth and Spectroscopic characterization of chloride and bromide single crystals doped with rare earth ions for the mid infrared amplification

International Nuclear Information System (INIS)

Ferrier, A.

2007-12-01

This work is devoted to the study of low phonon energy crystals doped with rare earth ions for the realisation of diode-pumped solid state laser sources emitting in the middle infrared. For that purpose, pure and (Er 3+ or Pr 3+ ) doped single crystals of KPb 2 Cl 5 and Tl 3 PbX 5 (X=Cl, Br) have been elaborated by using the Bridgman-Stockbarger method. These non-hygroscopic and congruent melting materials have been found to exhibit phase transitions during the cooling process but which do not limit the elaboration of centimeter-size single crystals. The spectroscopic study of the Er 3+ doped compounds has been performed both at high and low temperatures. It thus appears that these systems present long fluorescence lifetimes and relatively large gain cross sections favorable for a laser emission around 4.5μm. It has been demonstrated further that the up-conversion processes resulting from excited-state absorptions of the Er 3+ ions around the pumping wavelength as well as the energy transfer processes between the Er 3+ ions do not lead to significant optical losses for the laser system. The derived parameters then have been used to build a model and simulate the laser operation of the system following diode pumping around 800 nm. In the end, the spectroscopic study of the Pr 3+ ion in various materials has allowed us to evidence large emission cross sections associated with long fluorescence lifetimes, now favorable to a laser emission around 5μm. (author)

Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals

Directory of Open Access Journals (Sweden)

Hui Wang

2018-02-01

Full Text Available High-quality Ta-doped La2Ti2O7 (Ta-LTO single crystal of about 40 mm in length and 5 mm in diameter was successfully prepared by the optical floating zone method. An X-ray rocking curve reveals that the crystal of LTO has excellent crystalline quality. As-grown crystals were transparent after annealing in air and the transmittance is up to 76% in the visible and near-infrared region. X-ray diffraction showed that this compound possessed a monoclinic structure with P21 space group. The dielectric properties were investigated as functions of temperature (0~300 °C and frequency (102 Hz~105 Hz. Dielectric spectra indicated an increase in the room-temperature dielectric constant accompanied by a drop in the loss tangent as a result of the Ta doping. One relaxation was observed in the spectra of electric modulus, which was ascribed to be related to the oxygen vacancy. The dielectric relaxation with activation energy of 1.16 eV is found to be the polaron hopping caused by the oxygen vacancies.

Optical and magneto-optical properties of the electron-doped and hole-doped C{sub 82} crystal

Energy Technology Data Exchange (ETDEWEB)

Rostampour, E., E-mail: el_rostampour@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Koohi, A. [Plasma Physics and Nuclear Fusion Research School, Nuclear Science and Technology Research Institute, AEOI, Tehran (Iran, Islamic Republic of)

2015-01-15

The optical and magnetic properties of the doped C{sub 82} crystal have been investigated by Su–Schrieffer–Heeger (SSH) model, which is based on the Ewald method. When the C{sub 82} molecule is doped with one electron (or hole), a single electron is remained in the energy level that affects the optical and magnetic properties of the C{sub 82} crystal. The lattice and electronic structures of C{sub 82} changed with doping electron (or hole) in the molecule of C{sub 82}. Therefore, polarons are predicted in doped fullerenes. The obtained results showed that the dielectric tensor of the C{sub 82} crystal increased with doping electron (or hole) in the molecule of C{sub 82}. The spectral shapes of the dielectric tensor, circular dichroism and birefringence coefficient of the C{sub 82} crystal turn out to be determined mainly by the geometrical distributions of the pentagons in the fullerene structures.

Highly reproducible alkali metal doping system for organic crystals through enhanced diffusion of alkali metal by secondary thermal activation.

Science.gov (United States)

Lee, Jinho; Park, Chibeom; Song, Intek; Koo, Jin Young; Yoon, Taekyung; Kim, Jun Sung; Choi, Hee Cheul

2018-05-16

In this paper, we report an efficient alkali metal doping system for organic single crystals. Our system employs an enhanced diffusion method for the introduction of alkali metal into organic single crystals by controlling the sample temperature to induce secondary thermal activation. Using this system, we achieved intercalation of potassium into picene single crystals with closed packed crystal structures. Using optical microscopy and Raman spectroscopy, we confirmed that the resulting samples were uniformly doped and became K 2 picene single crystal, while only parts of the crystal are doped and transformed into K 2 picene without secondary thermal activation. Moreover, using a customized electrical measurement system, the insulator-to-semiconductor transition of picene single crystals upon doping was confirmed by in situ electrical conductivity and ex situ temperature-dependent resistivity measurements. X-ray diffraction studies showed that potassium atoms were intercalated between molecular layers of picene, and doped samples did not show any KH- nor KOH-related peaks, indicating that picene molecules are retained without structural decomposition. During recent decades, tremendous efforts have been exerted to develop high-performance organic semiconductors and superconductors, whereas as little attention has been devoted to doped organic crystals. Our method will enable efficient alkali metal doping of organic crystals and will be a resource for future systematic studies on the electrical property changes of these organic crystals upon doping.

Growth and Properties of Oxygen and Ion Doped BISMUTH(2) STRONTIUM(2) Calcium COPPER(2) Oxygen (8+DELTA) Single Crystals

Science.gov (United States)

Mitzi, David Brian

1990-01-01

A directional solidification method for growing large single crystals in the Bi_2Sr _2CaCu_2O _{8+delta} system is reported. Ion substitutions, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Ion doping results in little change of the superconducting transition for substitution levels below 20-25% (as a result of simultaneous oxygen intercalation), while beyond this level, the Meissner signal broadens and the low temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals, provides evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90K (as made) to 77K (oxygen pressure annealed) while the Hall concentrations increase from n = 3.1(3) times 10 ^{21} cm^{ -3} (0.34 holes/Cu site) to 4.6(3) times 10^{21} cm^{-3} (0.50 holes/Cu site). Further suppression of T_{c} to 72K is possible by annealing in oxygen pressures up to 100atm. No degradation of the Meissner transition or other indications of inhomogeneity or phase segregation with doping are noted, suggesting that oxygen doped Bi_2Sr _2CaCu_2O _{8+delta} is a suitable system for pursuing doping studies. The decrease in T _{c} with concentration for 0.34 <=q n <=q 0.50 indicates that a high carrier concentration regime exists where T_{c} decreases with n and suggests that this decrease does not arise from material inhomogeneity or other materials problems. The physical properties of these Bi _2Sr_2CaCu _2O_{8+delta} crystals, in this high carrier concentration regime, will be discussed.

Sodium doping in ZnO crystals

Science.gov (United States)

Parmar, N. S.; Lynn, K. G.

2015-01-01

ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1-3.5) × 1017 cm-3. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a NaZn level at ˜(220-270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4-5) orders of magnitude at room temperature.

Comparative study of neutron irradiation and carbon doping in MgB2 single crystals

International Nuclear Information System (INIS)

Krutzler, C.; Zehetmayer, M.; Eisterer, M.; Weber, H. W.; Zhigadlo, N. D.; Karpinski, J.

2007-01-01

We compare the reversible and irreversible magnetic properties of superconducting carbon doped and undoped MgB 2 single crystals before and after neutron irradiation. A large number of samples with transition temperatures between 38.3 and 22.8 K allows us to study the effects of disorder systematically. Striking similarities are found in the modification of the reversible parameters by irradiation and doping, which are discussed in terms of impurity scattering and changes of the Fermi surface. The irreversible properties are influenced by two counteracting mechanisms: they are enhanced by the newly introduced pinning centers but degraded by changes in the thermodynamic properties. Accordingly, the large neutron induced defects and the small defects from carbon doping lead to significantly different effects on the irreversible properties. Finally, the fishtail effect caused by all kinds of disorder is discussed in terms of an order-disorder transition of the flux-line lattice

Single crystal growth of pure and Nd-doped Y2O3 by flotating zone method with Xe arc lamp imaging furnace

International Nuclear Information System (INIS)

Tsuiki, H.; Kitazawa, K.; Fueki, K.; Masumoto, T.; Shiroki, K.

1980-01-01

Single crystals of undoped and Nd-doped yttrium oxide were grown by the floating zone method with a Xe arc lamp imaging furnace. The crystals were grown in the and directions. Transparent and subgrain-free single crystals were obtained at a growth rate of 30-60 mm/h for the undoped yttrium oxide. Facets of the cubic [100] and [211] were observed though the high temperature phase of the crystal is hexagonal. Dislocation densities of undoped yttrium oxide are given. (orig./WE)

Guided mode gain competition in Yb-doped rod-type photonic crystal fibers

DEFF Research Database (Denmark)

Poli, Federica; Passaro, Davide; Cucinotta, Annamaria

2009-01-01

The gain competition among the guided modes in Yb-doped rod-type photonic crystal fibers with a low refractive index core is investigated with a spatial model to demonstrate the fiber effective single-mode behaviour.......The gain competition among the guided modes in Yb-doped rod-type photonic crystal fibers with a low refractive index core is investigated with a spatial model to demonstrate the fiber effective single-mode behaviour....

Magnetic, electric and electron magnetic resonance properties of orthorhombic self-doped La1-xMnO3 single crystals

International Nuclear Information System (INIS)

Markovich, V; Fita, I; Shames, A I; Puzniak, R; Rozenberg, E; Yuzhelevski, Ya; Mogilyansky, D; Wisniewski, A; Mukovskii, Ya M; Gorodetsky, G

2003-01-01

The effect of lanthanum deficiency on structural, magnetic, transport, and electron magnetic resonance (EMR) properties has been studied in a series of La 1-x MnO 3 (x = 0.01, 0.05, 0.11, 0.13) single crystals. The x-ray diffraction study results for the crystals were found to be compatible with a single phase of orthorhombic symmetry. The magnetization curves exhibit weak ferromagnetism for all samples below 138 K. It was found that both the spontaneous magnetization and the coercive field increase linearly with x. The pressure coefficient dT N /dP decreases linearly with self-doping, from a value of 0.68 K kbar -1 for La 0.99 MnO 3 to 0.33 K kbar -1 for La 0.87 MnO 3 . The resistivity of low-doped La 0.99 MnO 3 crystal is of semiconducting character, while that of La 0.87 MnO 3 depends weakly on temperature between 180 and 210 K. It was found that the magnetic and transport properties of the self-doped compounds may be attributed to a phase separation involving an antiferromagnetic matrix and ferromagnetic clusters. The latter phases as well as their paramagnetic precursors have been directly observed by means of EMR

Crystal growth and scintillation properties of Er-doped Lu3Al5O12 single crystals

International Nuclear Information System (INIS)

Sugiyama, Makoto; Fujimoto, Yutaka; Yanagida, Takayuki; Totsuka, Daisuke; Kurosawa, Shunsuke; Futami, Yoshisuke; Yokota, Yuui; Chani, Valery; Yoshikawa, Akira

2012-01-01

Er-doped Lu 3 Al 5 O 12 (Er:LuAG) single crystalline scintillators with different Er concentrations of 0.1, 0.5, 1, and 3% were grown by the micro-pulling-down (μ-PD) method. The grown crystals were composed of single-phase material, as demonstrated by powder X-ray diffraction (XRD). The radioluminescence spectra measured under 241 Am α-ray excitation indicated host emission at approximately 350 nm and Er 3+ 4f-4f emissions. According to the pulse height spectra recorded under γ-ray irradiation, the 0.5% Er:LuAG exhibited the highest peak channel among the samples. The γ-ray excited decay time profiles were well fitted by the two-component exponential approximation (0.8 μs and 6-10 μs).

Sodium doping in ZnO crystals

International Nuclear Information System (INIS)

Parmar, N. S.; Lynn, K. G.

2015-01-01

ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10 17  cm −3 . Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na Zn level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature

Universal doping evolution of the superconducting gap anisotropy in single crystals of electron-doped Ba(Fe1‑x Rh x )2As2 from London penetration depth measurements

Science.gov (United States)

Kim, Hyunsoo; Tanatar, M. A.; Martin, C.; Blomberg, E. C.; Ni, Ni; Bud’ko, S. L.; Canfield, P. C.; Prozorov, R.

2018-06-01

Doping evolution of the superconducting gap anisotropy was studied in single crystals of 4d-electron doped Ba(Fe1‑x Rh x )2As2 using tunnel diode resonator measurements of the temperature variation of the London penetration depth . Single crystals with doping levels representative of an underdoped regime x  =  0.039 ( K), close to optimal doping x  =  0.057 ( K) and overdoped x  =  0.079 ( K) and x  =  0.131( K) were studied. Superconducting energy gap anisotropy was characterized by the exponent, n, by fitting the data to the power-law, . The exponent n varies non-monotonically with x, increasing to a maximum n  =  2.5 for x  =  0.079 and rapidly decreasing towards overdoped compositions to 1.6 for x  =  0.131. This behavior is qualitatively similar to the doping evolution of the superconducting gap anisotropy in other iron pnictides, including hole-doped (Ba,K)Fe2As2 and 3d-electron-doped Ba(Fe,Co)2As2 superconductors, finding a full gap near optimal doping and strong anisotropy toward the ends of the superconducting dome in the T-x phase diagram. The normalized superfluid density in an optimally Rh-doped sample is almost identical to the temperature-dependence in the optimally doped Ba(Fe,Co)2As2 samples. Our study supports the universal superconducting gap variation with doping and pairing at least in iron based superconductors of the BaFe2As2 family.

Crystal growth, optical properties, and laser operation of Yb3+-doped NYW single crystal

Science.gov (United States)

Cheng, Y.; Xu, X. D.; Yang, X. B.; Xin, Z.; Cao, D. H.; Xu, J.

2009-11-01

Laser crystal Yb3+-doped NaY(WO4)2 (Yb:NYW) with excellent quality has been grown by Czochralski technique. The rocking curves from (400) plane of as-grown Yb:NYW crystal was measured and the full-width value at half-maximum was 19.92″. The effective segregation coefficients were measured by the X-ray fluorescence method. The polarized absorption spectra and the fluorescence spectra of Yb:NYW crystal were measured at room temperature. The fluorescence decay lifetime of Yb3+ ion in NYW crystal has been investigated. The spectroscopic parameters of Yb:NYW crystal are calculated and compared with those of Yb:YAG crystal. A continuous wave output power of 3.06 W at 1031 nm was obtained with a slope efficiency of 42% by use of diode pumping.

Defect types and room temperature ferromagnetism in N-doped rutile TiO2 single crystals

Science.gov (United States)

Qin, Xiu-Bo; Li, Dong-Xiang; Li, Rui-Qin; Zhang, Peng; Li, Yu-Xiao; Wang, Bao-Yi

2014-06-01

The magnetic properties and defect types of virgin and N-doped TiO2 single crystals are probed by superconducting quantum interference device (SQUID), X-ray photoelectron spectroscopy (XPS), and positron annihilation analysis (PAS). Upon N doping, a twofold enhancement of the saturation magnetization is observed. Apparently, this enhancement is not related to an increase in oxygen vacancy, rather to unpaired 3d electrons in Ti3+, arising from titanium vacancies and the replacement of O with N atoms in the rutile structure. The production of titanium vacancies can enhance the room temperature ferromagnetism (RTFM), and substitution of O with N is the onset of ferromagnetism by inducing relatively strong ferromagnetic ordering.

Thermoelectric properties and thermal stability of Bi-doped PbTe single crystal

Science.gov (United States)

Chen, Zhong; Li, Decong; Deng, Shuping; Tang, Yu; Sun, Luqi; Liu, Wenting; Shen, Lanxian; Yang, Peizhi; Deng, Shukang

2018-06-01

In this study, n-type Bi-doped single-crystal PbTe thermoelectric materials were prepared by melting and slow cooling method according to the stoichiometric ratio of Pb:Bi:Te = 1-x:x:1 (x = 0, 0.1, 0.15, 0.2, 0.25). The X-ray diffraction patterns of Pb1-xBixTe samples show that all main diffraction peaks are well matched with the PbTe matrix, which has a face-centered cubic structure with the space group Fm 3 bar m . Electron probe microanalysis reveals that Pb content decreases gradually, and Te content remains invariant basically with the increase of Bi content, indicating that Bi atoms are more likely to replace Pb atoms. Thermal analysis shows that the prepared samples possess relatively high thermal stability. Simultaneously, transmission electron microscopy and selected area electron diffraction pattern indicate that the prepared samples have typical single-crystal structures with good mechanical properties. Moreover, the electrical conductivity of the prepared samples improved significantly compared with that of the pure sample, and the maximum ZT value of 0.84 was obtained at 600 K by the sample with x = 0.2.

Sodium doping in ZnO crystals

Energy Technology Data Exchange (ETDEWEB)

Parmar, N. S., E-mail: nparmar@wsu.edu; Lynn, K. G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2711 (United States)

2015-01-12

ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10{sup 17 }cm{sup −3}. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na{sub Zn} level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature.

The density and compositional analysis of titanium doped sapphire single crystal grown by the Czocharlski method

Science.gov (United States)

Kusuma, H. H.; Ibrahim, Z.; Othaman, Z.

2018-03-01

Titanium doped sapphire (Ti:Al2O3) crystal has attracted attention not only as beautiful gemstones, but also due to their applications as high power laser action. It is very important crystal for tunable solid state laser. Ti:Al2O3 crystals have been success grown using the Czocharlski method with automatic diameter control (ADC) system. The crystals were grown with different pull rates. The structure of the crystal was characterized with X-Ray Diffraction (XRD). The density of the crystal was measurement based on the Archimedes principle and the chemical composition of the crystal was confirmed by the Energy Dispersive X-ray (EDX) Spectroscopy. The XRD patterns of crystals are showed single main peak with a high intensity. Its shows that the samples are single crystal. The Ti:Al2O3 grown with different pull rate will affect the distribution of the concentration of dopant Ti3+ and densities on the sapphire crystals boules as well on the crystal growth process. The increment of the pull rate will increase the percentage distribution of Ti3+ and on the densities of the Ti:Al2O3 crystal boules. This may be attributed to the speed factor of the pull rate of the crystal that then caused changes in the heat flow in the furnace and then causes the homogeneities is changed of species distribution of atoms along crystal.

Growth of Ca, Zr co-doped BaTiO3 lead-free ferroelectric single crystal and its room-temperature piezoelectricity

Directory of Open Access Journals (Sweden)

Donglin Liu

2017-09-01

Full Text Available Lead-free Ca, Zr co-doped BaTiO3 (BCZT single crystal with a dimension up to 2mm×2mm×2mm was grown by a spontaneous nucleation technique using KF as the flux. The composition of the studied single crystal was defined to be Ba0.798Ca0.202Zr0.006Ti0.994O3, corresponding to a tetragonal phase at room temperature. The oriented single crystal exhibited a quasi-static piezoelectric constant of approximately 232 pC/N. The effective piezoelectric coefficient d33* of the single domain crystal obtained under a unipolar electric field of 35 kV/cm was 179 pm/V. Rayleigh analysis was used to identify the intrinsic and extrinsic contributions to the room-temperature piezoelectricity of BCZT single crystal. The extrinsic contribution was estimated up to 40% due to the irreversible domain wall movement. Furthermore a sixth-order polynomial of Landau expansion was employed to analyze the intrinsic contribution to piezoelectricity of BCZT single crystal. The large energy barriers inhibited polarization rotations, leading to the relatively low piezoelectricity.

Development of n- and p-type Doped Perovskite Single Crystals Using Solid-State Single Crystal Growth (SSCG) Technique

Science.gov (United States)

2017-10-09

for AGG should be minimal. For this purpose, the seeds for AGG may also be provided externally. This process is called the solid-state single...bonding process . Figure 31 shows (a) the growth of one large single crystal from one small single crystal seed as well as (b) the growth of one...one bi-crystal seed : One large bi-crystal can be grown from one small bi-crystal by SSCG process . Fig. 32. Diffusion bonding process for

Structural and optical properties of a NaCl single crystal doped with CuO nanocrystals

International Nuclear Information System (INIS)

Addala, S.; Bouhdjer, L.; Halimi, O.; Boudine, B.; Sebais, M.; Chala, A.; Bouhdjar, A.

2013-01-01

A cupric oxide (CuO) nanocrystal-doped NaCl single crystal and a pure NaCl single crystal are grown by using the Czochralski (Cz) method. A number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, Fourier transform infrared (FT-IR) spectroscopy, Raman spectroscopy, optical absorption in the UV—visible range, and photoluminescence (PL) spectroscopy are used to characterize the obtained NaCl and NaCl:CuO crystals. It is observed that the average radius of CuO crystallites in NaCl:CuO crystal is about 29.87 nm, as derived from the XRD data analysis. Moreover, FT-IR and Raman spectroscopy results confirm the existence of the monoclinic CuO phase in NaCl crystal. UV—visible absorption measurements indicate that the band gap of the NaCl:CuO crystal is 434 nm (2.85 eV), and it shows a significant amount of blue-shift (ΔE g = 1 eV) in the band gap energy of CuO, which is due to the quantum confinement effect exerted by the CuO nanocrystals. The PL spectrum of the NaCl:CuO shows a broad emission band centred at around 438 nm, which is consistent with the absorption measurement. (interdisciplinary physics and related areas of science and technology)

Induced defects in neutron irradiated GaN single crystals

International Nuclear Information System (INIS)

Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.

2005-01-01

The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal

Effect of amaranth on dielectric, thermal and optical properties of KDP single crystal

Energy Technology Data Exchange (ETDEWEB)

Chandran, Senthilkumar; Paulraj, Rajesh, E-mail: rajeshp@ssn.edu.in; Ramasamy, P.

2017-01-15

Bulk single crystals of pure and amaranth doped KDP were grown using point seed technique. Effect of amaranth doping on KDP crystals was analyzed using powder XRD, thermal analysis (TG/DTA), dielectric, photoconductivity and etching studies. The phase purity and crystallinity of pure and dye doped crystals were confirmed by powder X-ray diffraction analysis. It is observed from TG-DTA analysis that the decomposition point decreased while doping with amaranth. Dielectric constant and loss increases with increasing temperatures. The photoconductivity decreases with the increase of amaranth concentration. - Highlights: • Pure and amaranth doped KDP crystals grown from point seed technique. • The addition of amaranth changes the decomposition points of dye doped KDP crystals. • Dielectric constant is increased. • It shows positive photoconductivity.

Anomalous doping of a molecular crystal monitored with confocal fluorescence microscopy: Terrylene in a p-terphenyl crystal

Science.gov (United States)

Białkowska, Magda; Deperasińska, Irena; Makarewicz, Artur; Kozankiewicz, Bolesław

2017-09-01

Highly terrylene doped single crystals of p-terphenyl, obtained by co-sublimation of both components, showed bright spots in the confocal fluorescence images. Polarization of the fluorescence excitation spectra, blinking and bleaching, and saturation behavior allowed us to attribute them to single molecules of terrylene anomalously embedded between two neighbor layers of the host crystal, in the (a,b) plane. Such an orientation of terrylene molecules results in much more efficient absorption and collection of the fluorescence photons than in the case of previously investigated molecules embedded in the substitution sites. The above conclusion was supported by quantum chemistry calculations. We postulate that the kind of doping considered in this work should be possible in other molecular crystals where the host molecules are organized in a herringbone pattern.

Impacts of Co-doping on the superconductivity and the orbital ordering state in Fe1-xCoxSe single crystal studied by the electrical transport.

Science.gov (United States)

Urata, Takahiro; Tanabe, Yoichi; Heguri, Satoshi; Tanigaki, Katsumi

2015-03-01

In the FeSe with the simplest crystal structure in the Fe-based superconductor families, although both the superconductivity and the orbital ordering states are investigated, the relation between them is still unclear. Here, we report Co doping effects on the superconductivity and the orbital ordering state in Fe1-xCoxSe single crystals. The electrical transport measurements demonstrated that the superconductivity vanishes at 4 % Co doping while the orbital ordering state may be robust against Co doping. Present results suggest that the orbital ordering state is not related to the emergence of the superconductivity in FeSe.

EPR and optical absorption studies of VO2+ doped L-alanine (C3H7NO2) single crystals

International Nuclear Information System (INIS)

Biyik, Recep

2009-01-01

VO 2+ doped L-alanine (C 3 H 7 NO 2 ) single crystals and powders are examined by electron paramagnetic resonance (EPR) and optical absorption spectroscopy. Three magnetically different sites are resolved from angular variations of L-alanine single crystal EPR spectra. In some specific orientations each VO 2+ line splits into three superhyperfine lines with intensities of 1:2:1 and maximum splitting value of 2.23 mT. The local symmetries of VO 2+ complex sites are nearly axial. The optical absorption spectra show three bands. Spin Hamiltonian parameters are measured and molecular orbital coefficients are calculated by correlating EPR and optical absorption data for the central vanadyl ion.

Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al

Science.gov (United States)

Galazka, Zbigniew; Ganschow, Steffen; Fiedler, Andreas; Bertram, Rainer; Klimm, Detlef; Irmscher, Klaus; Schewski, Robert; Pietsch, Mike; Albrecht, Martin; Bickermann, Matthias

2018-03-01

We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga2O3 single crystals grown by the Czochralski method, as well as the impact of these dopants on optical properties. The segregation of Cr and Ce and their incorporation into the β-Ga2O3 crystal structure strongly depends on O2 concentration in the growth atmosphere which has a noticeable impact on decomposition of Ga2O3 and Cr2O3, as well as on the charge state of Cr and Ce. Effective segregation coefficients for Cr are in the range of 3.1-1.5 at 7-24 vol% O2, while for Ce they are roughly below 0.01 at 1.5-34 vol% O2. The effective segregation coefficient for Al is 1.1 at 1.5-21 vol% O2. Both dopants Ce and Al have a thermodynamically stabilizing effect on β-Ga2O3 crystal growth by supressing decomposition. While Ce has no impact on the optical transmittance in the ultraviolet and visible regions, in Cr doped crystals we observe three absorption bands due to Cr3+ on octahedral Ga sites, one in the ultraviolet merging with the band edge absorption of β-Ga2O3 and two in the visible spectrum, for which we estimate the absorption cross sections. Al doping also does not induce dopant related absorption bands but clearly shifts the absorption edge as one expects for a solid-solution crystal Ga2(1-x)Al2xO3 still in the monoclinic phase. For the highest doping concentration (Ga1.9Al0.1O3) we estimate an increase of the energy gap by 0.11 eV.

Characterization of pure and copper-doped iron tartrate crystals

Indian Academy of Sciences (India)

Single crystal growth of pure and copper-doped iron tartrate crystals bearing composition Cu Fe(1−) C4H4O6 · H2O, where = 0, 0.07, 0.06, 0.05, 0.04, 0.03, is achieved using gel technique. The elemental analysis has been done using energy-dispersive X-ray analysis (EDAX) spectrum. The characterization studies ...

Nd-doped Lu3Al5O12 single-crystal scintillator for X-ray imaging

International Nuclear Information System (INIS)

Sugiyama, Makoto; Fujimoto, Yutaka; Yanagida, Takayuki; Totsuka, Daisuke; Chani, Valery; Yokota, Yuui; Yoshikawa, Akira

2013-01-01

The optical and scintillation properties of Nd-doped Lu 3 Al 5 O 12 (Nd:LuAG) crystals grown by the Czochralski (Cz) method were examined under X-ray excitation. Their applicability for X-ray imaging was also inspected. The radioluminescence spectrum induced by X-rays showed a broad host emission and sharp Nd 3+ 4f–4f emission peaks in the UV to visible wavelengths. The light output current of the Nd:LuAG was 85% of that of a standard CdWO 4 X-ray scintillator. The afterglow value measured 20 ms after X-ray irradiation was 1.5%. An X-ray radiographic image was successfully obtained using the Nd:LuAG scintillator coupled with the charge coupled device (CCD) photodetector. -- Highlights: ► The Nd:LuAG single crystal was produced to perform X-ray imaging test. ► The sample exhibited the 85% light output current of the standard CdWO 4 . ► The afterglow intensity of the sample was very high compared with the CdWO 4 . ► The X-ray radiographic image was obtained from the Nd:LuAG single crystal

Scintillation properties of pure and Ca-doped ZnWO4 crystals

International Nuclear Information System (INIS)

Danevich, F.A.; Shkulkova, O.G.; Henry, S.; Kraus, H.; McGowan, R.; Mikhailik, V.B.; Telfer, J.

2008-01-01

Following the investigations of the structure and scintillation properties of Ca-doped zinc tungstate powder [phys. stat. sol. (a) 204, 730 (2007)] a single-crystal of ZnWO 4 -Ca (0.5 mol%) was grown and characterised. The relative light output, energy resolution and decay characteristics were measured for pure and Ca-doped ZnWO 4 scintillators. An increase in the light yield of ∝40% compared with the undoped crystal, and an energy resolution 9.6% ( 137 Cs) were obtained for Ca-doped ZnWO 4 . The observed improvement is attributed to the reduction of self-absorption (bleaching) of the crystal. The cause of bleaching as well as the possible contribution of scattering is discussed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Recombination luminescence of Cu and/or Ag doped lithium tetraborate single crystals

Energy Technology Data Exchange (ETDEWEB)

Romet, I. [Institute of Physics, University of Tartu, W. Ostwaldi Str. 1, 50411 Tartu (Estonia); Aleksanyan, E. [Institute of Physics, University of Tartu, W. Ostwaldi Str. 1, 50411 Tartu (Estonia); A. Alikhanyan National Science Laboratory, 2 Br. Alikhanyan Str., 0036 Yerevan (Armenia); Brik, M.G. [Institute of Physics, University of Tartu, W. Ostwaldi Str. 1, 50411 Tartu (Estonia); College of Sciences, Chongqing University of Posts and Telecommunications, 400065 Chongqing (China); Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, PL-42200 Czestochowa (Poland); Corradi, G. [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, Konkoly-Thege M. út 29-33, H-1121 Budapest (Hungary); Kotlov, A. [Photon Science at DESY, Notkestrasse 85, 22607 Hamburg (Germany); Nagirnyi, V., E-mail: vitali.nagirnoi@ut.ee [Institute of Physics, University of Tartu, W. Ostwaldi Str. 1, 50411 Tartu (Estonia); Polgár, K. [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, Konkoly-Thege M. út 29-33, H-1121 Budapest (Hungary)

2016-09-15

Complex investigations of thermostimulated luminescence (TSL) and radioluminescence properties of Li{sub 2}B{sub 4}O{sub 7} (LTB), LTB:Cu, LTB:Ag and LTB:Cu, Ag crystals suitable for tissue equivalent dosimeters were carried out in the temperature range 4.2–700 K. TSL, cathodoluminescence and X-ray excited luminescence spectra are compared to those measured under photoexcitation. The emission band at 4.6 eV in LTB:Ag is reliably related to Ag{sup +} ions based on the comparison of the results of optical spectroscopy studies and first principle calculations. Energy transfer from the relaxed exited state of the Ag{sup +} ion to the Cu{sup +} ion in double-doped LTB:Cu, Ag crystals is demonstrated. Thermostimulated recombination of charge carriers in irradiated crystals is seen to take place mainly at oxygen sites at low temperatures and at impurity sites at high temperatures. For the first time, the appearance of the low-temperature TSL peak at 90 K is assigned to ionic processes in LTB crystals. The appearance of pyroelectric flashes due to the lattice relaxation in the temperature region 90–240 K is demonstrated and their surface-related nature clarified. In accordance with EPR studies the dosimetric TSL peaks in copper and silver doped LTB crystals are attributed to thermally released electrons recombining with Cu{sup 2+} and Ag{sup 2+} centres.

Accurate X-ray diffraction studies of KTiOPO{sub 4} single crystals doped with niobium

Energy Technology Data Exchange (ETDEWEB)

Novikova, N. E., E-mail: natnov@ns.crys.ras.ru; Sorokina, N. I.; Alekseeva, O. A.; Verin, I. A. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Crystallography and Photonics Federal Scientific Research Center (Russian Federation); Kharitonova, E. P.; Orlova, E. I.; Voronkova, V. I. [Moscow State University, Faculty of Physics (Russian Federation)

2017-01-15

Single crystals of potassium titanyl phosphate doped with 4% of niobium (КТР:4%Nb) and 6% of niobium (KTP:6%Nb) are studied by accurate X-ray diffraction at room temperature. The niobium atoms are localized near the Ti1 and Ti2 atomic positions, and their positions are for the first time refined independent of the titanium atomic positions. Maps of difference electron density in the vicinity of K1 and K2 atomic positions are analyzed. It is found that in the structure of crystal КТР:4%Nb, additional positions of K atoms are located farther from the main positions and from each other than in КТР and KTP:6%Nb crystals. The nonuniform distribution of electron density found in the channels of the КТР:4%Nb structure is responsible for ~20% increase in the signal of second harmonic generation.

Growth and luminescent properties of Li2B4O7 single crystal doped with Cu

International Nuclear Information System (INIS)

Bui The Huy; Bui Minh Ly; Vu Xuan Quang; Huynh Ky Hanh; Doan Phan Thao Tien; Vinh Hao; Tran Ngoc

2009-01-01

The authors have primarily succeeded in the study of the technology for growing single crystal Li 2 B 4 O 7 doped with Cu ions by Bridgman technique. The TL-3D spectra show peaks at around 375 nm (3d 9 4s → 3d 10 radiative excitation transition). This success opened up an opportunity in the radiotherapy to manufacture scintillators for neutron detection. The kinetic parameters of thermal stimulation luminescence were investigated by the three point method.

Crystal growth and scintillation properties of Er-doped Lu{sub 3}Al{sub 5}O{sub 12} single crystals

Energy Technology Data Exchange (ETDEWEB)

Sugiyama, Makoto, E-mail: makoto.sugiyama@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Fujimoto, Yutaka [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Totsuka, Daisuke [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co. Ltd., 810-5 Nobe-cho Tatebayashi Gunma (Japan); Kurosawa, Shunsuke; Futami, Yoshisuke; Yokota, Yuui; Chani, Valery [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

2012-02-01

Er-doped Lu{sub 3}Al{sub 5}O{sub 12} (Er:LuAG) single crystalline scintillators with different Er concentrations of 0.1, 0.5, 1, and 3% were grown by the micro-pulling-down ({mu}-PD) method. The grown crystals were composed of single-phase material, as demonstrated by powder X-ray diffraction (XRD). The radioluminescence spectra measured under {sup 241}Am {alpha}-ray excitation indicated host emission at approximately 350 nm and Er{sup 3+} 4f-4f emissions. According to the pulse height spectra recorded under {gamma}-ray irradiation, the 0.5% Er:LuAG exhibited the highest peak channel among the samples. The {gamma}-ray excited decay time profiles were well fitted by the two-component exponential approximation (0.8 {mu}s and 6-10 {mu}s).

A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

Energy Technology Data Exchange (ETDEWEB)

Mokuno, Yoshiaki, E-mail: mokuno-y@aist.go.jp; Kato, Yukako; Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Yamada, Hideaki; Shikata, Shinichi [Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

2014-06-23

A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400 cm{sup −2}, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality.

Thermal, dielectric studies on pure and amino acid ( L-glutamic acid, L-histidine, L-valine) doped KDP single crystals

Science.gov (United States)

Kumaresan, P.; Moorthy Babu, S.; Anbarasan, P. M.

2008-05-01

Amino acids ( L-glutamic acid, L-histidine, L-valine) doped potassium dihydrogen phospate crystals are grown by solution growth technique. Slow cooling as well as slow evaporation methods were employed to grow these crystals. The concentration of dopants in the mother solution was varied from 0.1 mol% to 10 mol%. The solubility data for all dopants concentration were determined. There is variation in pH value and hence, there is habit modification of the grown crystals were characterized with UV-VIS, FT-IR studies, SHG trace elements and dielectric studies reveal slight distortion of lattice parameter for the heavily doped KDP crystals. UV-Visible spectra confirm the improvement in the transparency of these crystals on doping metal ions. FT-IR spectra reveal strong absorption band between 1400 and 1600 cm -1 for metal ion doped crystals. TGA-DTA studies reveal good thermal stability. The dopants increase the hardness value of the material and it also depends on the concentration of the dopants. Amino acids doping improved the NLO properties. The detailed results on the spectral parameters, habit modifications and constant values will be presented.

Light emission from organic single crystals operated by electrolyte doping

Science.gov (United States)

Matsuki, Keiichiro; Sakanoue, Tomo; Yomogida, Yohei; Hotta, Shu; Takenobu, Taishi

2018-03-01

Light-emitting devices based on electrolytes, such as light-emitting electrochemical cells (LECs) and electric double-layer transistors (EDLTs), are solution-processable devices with a very simple structure. Therefore, it is necessary to apply this device structure into highly fluorescent organic materials for future printed applications. However, owing to compatibility problems between electrolytes and organic crystals, electrolyte-based single-crystal light-emitting devices have not yet been demonstrated. Here, we report on light-emitting devices based on organic single crystals and electrolytes. As the fluorescent materials, α,ω-bis(biphenylyl)terthiophene (BP3T) and 5,6,11,12-tetraphenylnaphthacene (rubrene) single crystals were selected. Using ionic liquids as electrolytes, we observed clear light emission from BP3T LECs and rubrene EDLTs.

Fabricating large two-dimensional single colloidal crystals by doping with active particles

NARCIS (Netherlands)

van der Meer, B; Filion, L; Dijkstra, M

2016-01-01

Using simulations we explore the behaviour of two-dimensional colloidal (poly)crystals doped with active particles. We show that these active dopants can provide an elegant new route to removing grain boundaries in polycrystals. Specifically, we show that active dopants both generate and are

Effect of L-Cysteine doping on growth and some characteristics of potassium dihydrogen phosphate single crystals

Science.gov (United States)

Mahadik, Ashwini; Soni, P. H.; Desai, C. F.

2017-12-01

Among quite a number of technologically important NLO materials, Potassium Dihydrogen Phosphate (KDP) is one of the most favourable ones for second harmonic generation applications, such as in electro-optic modulators, parametric oscillators and harmonic generators. The authors report here their studies on KDP crystals doped with L-Cysteine (1 mol% and 2 mol%). The dopant inclusion in the crystals was confirmed using Fourier transform infrared (FT-IR) spectroscopy and Powder X-Ray Diffraction (XRD). The XRD results also confirm the tetragonal structure with lattice parameters a = b = 7.45 Å and c = 6.98 Å. The presence of functional groups of crystals was analyzed using the FTIR spectra. For band gap evaluation, UV-Vis spectra were used and it was found to be 3.41 eV, 4.40eVand 4.50 eV, respectively in the cases of pure KDP, 1 mol% and 2 mol% L-Cysteine dopings. The spectra quality indicates good transparency of the doped crystals in the visible region, a feature quite desirable for applications in optoelectronics.

Characterizations of Pr-doped Yb3Al5O12 single crystals for scintillator applications

Science.gov (United States)

Yoshida, Yasuki; Shinozaki, Kenji; Igashira, Takuya; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

2018-04-01

Yb3Al5O12 (YbAG) single crystals doped with different concentrations of Pr were synthesized by the Floating Zone (FZ) method. Then, we evaluated their basic optical and scintillation properties. All the samples showed photoluminescence (PL) with two emission bands appeared approximately 300-500 nm and 550-600 nm due to the charge transfer luminescence of Yb3+ and intrinsic luminescence of the garnet structure, respectively. A PL decay profile of each sample was approximated by a sum of two exponential decay functions, and the obtained decay times were 1 ns and 3-4 ns. In the scintillation spectra, we observed emission peaks in the ranges from 300 to 400 nm and from 450 to 550 nm for all the samples. The origins of these emissions were attributed to charge transfer luminescence of Yb3+ and intrinsic luminescence of the garnet structure, respectively. The scintillation decay times became longer with increasing the Pr concentrations. Among the present samples, the 0.1% Pr-doped sample showed the lowest scintillation afterglow level. In addition, pulse height spectrum of 5.5 MeV α-rays was demonstrated using the Pr-doped YbAG, and we confirmed that all the samples showed a full energy deposited peak. Above all, the 0.1% Pr-doped sample showed the highest light yield with a value of 14 ph/MeV under α-rays excitation.

Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

Energy Technology Data Exchange (ETDEWEB)

Zhu, Xiaoyang [Columbia Univ., New York, NY (United States); Frisbie, Daniel [Univ. of Minnesota, Minneapolis, MN (United States)

2017-03-31

The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering.

Growth of Yb3+-doped Y2O3 single crystal rods by the micro-pulling-down method

International Nuclear Information System (INIS)

Mun, J.H.; Novoselov, A.; Yoshikawa, A.; Boulon, G.; Fukuda, T.

2005-01-01

The rare-earth sesquioxides (RE 2 O 3 , RE = Lu, Y and Sc) are very promising host crystals for advanced laser diode (LD)-pumped Yb 3+ -doped solid-state lasers due to unusual combination, almost unique of favourable structural, thermal and spectroscopic properties which are described. In spite of these favourable properties, the bulk single crystal growth technology for the rare-earth sesquioxides has not been established yet. The extremely high melting temperature at around 2400 deg. C has prevented it. However, we shall show that yttrium oxide crystals (Yb x Y 1-x ) 2 O 3 , x = 0.0, 0.005, 0.05, 0.08 and 0.15 of cylindrical shape as laser rods with 4.2 mm in diameter and 15-20 mm in length have been grown from rhenium crucibles by the micro-pulling-down method. The crystal quality characterisation of undoped Y 2 O 3 crystal was determined using X-ray rocking curve (XRC) analysis. Yb were homogeneously distributed in Y 2 O 3 host crystal

Synergistic effect of non-covalent interaction in colloidal nematic liquid crystal doped with magnetic functionalized single-walled carbon nanotubes

Science.gov (United States)

Dalir, Nima; Javadian, Soheila

2018-03-01

Single-walled carbon nanotubes (SWCNTs), CNT@Fe3O4, and Fe3O4 nanocomposites were doped to eutectic uniaxial nematic liquid crystal (NLC's) (E5CN7) to improve physiochemical properties such as phase transition temperature, activation energy (Ea), dielectric anisotropy, and electro-optical properties. The thermal study of nematic phase shows a decrease in the nematic to isotropic phase transition temperature as CNT is doped. However, higher doping concentration of CNTs leads to the further increase in transition temperature. The anchoring effect or π-π interaction plays a key role in N-I phase transition. The functionalization of SWCNTs with Fe3O4 diminishes the CNT aggregation while the magnetic susceptibility is increased. The functionalized CNT doping to NLC's decrease significantly the phase transition temperature compared to doping of non-functionalized CNTs. Attractive interaction between guest and host molecules by magnetic and geometry effect increased the enthalpy and entropy of phase transition in the SWCNT@Fe3O4 sample compared to non-functionalized CNT doped system. Also, the Ea values are decreased as SWCNT@Fe3O4 is doped to pure E5CN7. The difference of N-I phase transition temperature was observed in Fe3O4 and CNT@Fe3O4 compared to SWCNT doped systems. Finally, dielectric anisotropy was increased in the doped system compared to pure NLC.

Electron paramagnetic resonance in myoglobin single crystals doped with Cu(II) : conformational changes

International Nuclear Information System (INIS)

Nascimento, O.R.

1976-03-01

Single crystals of sperm whale met-Myoglobin were doped with Cu (II) by immersion in a saturaded solution of NH 3 (SO 4 ) containing diluted Cu (SO 4 ).Two isotropic EPR spectra with different parameters and three anisotropic EPR spectra corresponding to three distinct types of Cu(II) : Mb complexes were identified. A fitting of the angular variation of the EPR spectrum of one of the complexes named here Cu(II)A : Mb was done using a spin Hamiltonian with axial symmetry calculated up to second order which gave the EPR hyperfine parameters.A study of the thermal variation of the complex Cu (II)A : Mb EPR spectrum in the temperature range of 25 0 C to 55 0 C allowed an identification of a conformational variation of the molecule the spectrum evolved from the anisotropic to isotropic spectrum with different parameters. A model of the Cu(II)A : Mb complex is proposed to explain the conformational change of the molecule by means of EPR spectra before and after thermal treatment. The isotropic spectrum obtained with the crystal at 55 0 C presents the EPR parameters very similar to the same parameters obtained with the Cu (II) : Mb complex in aqueous solution at 77 0 K, whereas the isotropic spectra parameters obtained with the dried crystal are quite different. It was possible to identify two different tertiary structures of the myoglobin molecule : one corresponding to the molecule in the crystal at 55 0 C and other to the dry crystal. A slight difference in the crystalline and solution structure of the myoglobin mollecule is observed. (Author) [pt

Optically stimulated luminescence of Tb{sup 3+}/Sm{sup 3+} doubly doped K{sub 2}YF{sub 5} single crystals

Energy Technology Data Exchange (ETDEWEB)

Camargo, L.; Marcazzo, J.; Santiago, M.; Caselli, E. [Universidad Nacional del Centro de la Provincia de Buenos Aires, Instituto de Fisica Arroyo Seco, Gral. Pinto 399, B7000GHG, Tandil (Argentina); Khaidukov, N. M., E-mail: jmarcass@exa.unicen.edu.ar [Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninskii Prospekt 31, 119991 Moscow (Russian Federation)

2014-08-15

In this work optically stimulated luminescence (OSL) properties of K{sub 2}YF{sub 5} crystals doubly doped with Tb{sup 3+} and Sm{sup 3+} ions have been investigated for the first time. OSL responses for different dopant concentration and for optical stimulation with different wavelengths have been analyzed for each compound. Dosimetric properties of the most efficient composition, namely, K{sub 2}YF{sub 5}:1.0 at.% Tb{sup 3+}; 1.0 at.% Sm{sup 3+}, have been studied. Finally, the possible application of this single crystal as OSL dosimeter has been evaluated. (Author)

Single crystal growth of high-temperature superconductor Bi2.1Sr1.9Ca1.0Cu2.0AlyOx

International Nuclear Information System (INIS)

Gu, G.D.; Lin, Z.W.

2000-01-01

The effect of Al doping on the crystal growth of Bi-2212 was studied by a floating zone method. The results show that the planar solid-liquid interface breaks down into a cellular growth front while increasing Al doping in the rods of Bi 2.1 Sr 1.9 Ca 1.0 Cu 2.0 Al y O x . The size of the single crystals decreases with the increase in Al doping. The solubility limit for Al or the maximum Cu-site substitution by Al in the Bi-2212 crystals is less than y = 0.01. The majority of nominal Al doping in the rods forms an Al-rich phase in the grain boundaries of the single crystals. The superconductivity of as-grown Al-doped crystals decreases progressively with increasing Al doping in the rods, however, the T c for annealed Al-doped crystals does not change with increasing Al doping in the rods. The unchanged T c for annealed Al-doped Bi-2212 crystals either suggests that a small amount of Al substitution in the Cu site does not cause T c to drop significantly, or indicates that Al only enters the Bi-2212 crystals as an impurity, but does not substitute at the Cu site in the Bi-2212 crystals. (author)

Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses

International Nuclear Information System (INIS)

Carcelen, V.; Rodriguez-Fernandez, J.; Dieguez, E.; Hidalgo, P.

2010-01-01

The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentrations (8 and 14 at. %) by the Bridgman oscillation method, in which one experiment has been carried out with a platinum (Pt) tube as the ampoule support. Pt also acts as a cold finger and reduces the growth velocity and enhances crystalline perfection. The grown single crystals have been studied with different analysis methods. The stoichiometry was confirmed by energy dispersive by x-ray and inductively coupled plasma mass spectroscopy analyses and it was found there is no incorporation of impurities in the grown crystal. The presence of Cd and Te vacancies was determined by cathodoluminescence studies. Electrical properties were assessed by I-V analysis and indicated higher resistive value (8.53x10 8 Ω cm) for the crystal grown with higher zinc concentration (with Cd excess) compare to the other (3.71x10 5 Ω cm).

Elaboration and characterization of a KCl single crystal doped with nanocrystals of a Sb2O3 semiconductor

International Nuclear Information System (INIS)

Bouhdjer, L.; Addala, S.; Halimi, O.; Boudine, B.; Sebais, M.; Chala, A.

2013-01-01

Undoped and doped KCl single crystals have been successfully elaborated via the Czochralski (Cz) method. The effects of dopant Sb 2 O 3 nanocrystals on structural and optical properties were investigated by a number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDAX) analysis, UV-visible and photoluminescence (PL) spectrophotometers. An XRD pattern of KCl:Sb 2 O 3 reveals that the Sb 2 O 3 nanocrystals are in the well-crystalline orthorhombic phase. The broadening of diffraction peaks indicated the presence of a Sb 2 O 3 semiconductor in the nanometer size regime. The shift of absorption and PL peaks is observed near 334 nm and 360 nm respectively due to the quantum confinement effect in Sb 2 O 3 nanocrystals. Particle sizes calculated from XRD studies agree fairly well with those estimated from optical studies. An SEM image of the surface KCl:Sb 2 O 3 single crystal shows large quasi-spherical of Sb 2 O 3 crystallites scattered on the surface. The elemental analysis from EDAX demonstrates that the KCl:Sb 2 O 3 single crystal is slightly rich in oxygen and a source of excessive quantities of oxygen is discussed. (semiconductor materials)

Scintillation and radiation damage of doped BaF2 crystals

International Nuclear Information System (INIS)

Gong Zufang; Xu Zizong; Chang Jin

1992-01-01

The emission spectra and the radiation damage of BaF 2 crystals doped Ce and Dy have been studied. The results indicate that the doped BaF 2 crystals have the intrinsic spectra of impurity besides the intrinsic spectra of BaF 2 crystals. The crystals colored and the transmissions decrease with the concentration of impurity in BaF 2 crystals after radiation by γ-ray of 60 Co. The doped Ce BaF 2 irradiated by ultraviolet has faster recover of transmissions but for doped Dy the effect is not obvious. The radiation resistance is not good as pure BaF 2 crystals

Optical properties of Sulfur doped InP single crystals

Science.gov (United States)

El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.

2014-05-01

Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral range of 200-2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals exhibit allowed and forbidden direct transitions with energy gaps of 1.578 and 1.528 eV, respectively. Analysis of the refractive index in the normal dispersion region was discussed in terms of the single oscillator model. Some optical dispersion parameters namely: the dispersion energy (Ed), single oscillator energy (Eo), high frequency dielectric constant (ɛ∞), and lattice dielectric constant (ɛL) were determined. The volume and the surface energy loss functions (VELF & SELF) were estimated. Also, the real and imaginary parts of the complex conductivity were calculated.

Growth and characterization of heavily doped silicon crystals

Energy Technology Data Exchange (ETDEWEB)

Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

2011-08-15

Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Potassium acceptor doping of ZnO crystals

Directory of Open Access Journals (Sweden)

Narendra S. Parmar

2015-05-01

Full Text Available ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ∼1 × 1016 cm−3. IR measurements show a local vibrational mode (LVM at 3226 cm−1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O–H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm−1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.

Potassium acceptor doping of ZnO crystals

Science.gov (United States)

Parmar, Narendra S.; Corolewski, Caleb D.; McCluskey, Matthew D.; Lynn, K. G.

2015-05-01

ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ˜1 × 1016 cm-3. IR measurements show a local vibrational mode (LVM) at 3226 cm-1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O-H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm-1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.

Potassium acceptor doping of ZnO crystals

Energy Technology Data Exchange (ETDEWEB)

Parmar, Narendra S., E-mail: nparmar@wsu.edu; Lynn, K. G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2711 (United States); Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States); Corolewski, Caleb D.; McCluskey, Matthew D. [Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States)

2015-05-15

ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ∼1 × 10{sup 16} cm{sup −3}. IR measurements show a local vibrational mode (LVM) at 3226 cm{sup −1}, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O–H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm{sup −1}. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.

Filament-induced luminescence and supercontinuum generation in undoped, Yb-doped, and Nd-doped YAG crystals

Science.gov (United States)

Kudarauskas, D.; Tamošauskas, G.; Vengris, M.; Dubietis, A.

2018-01-01

We present a comparative spectral study of filament-induced luminescence and supercontinuum generation in undoped, Yb-doped, and Nd-doped YAG crystals. We show that supercontinuum spectra generated by femtosecond filamentation in undoped and doped YAG crystals are essentially identical in terms of spectral extent. On the other hand, undoped and doped YAG crystals exhibit remarkably different filament-induced luminescence spectra whose qualitative features are independent of the excitation wavelength and provide information on the energy deposition to embedded dopants, impurities, and the crystal lattice itself. Our findings suggest that filament-induced luminescence may serve as a simple and non-destructive tool for spectroscopic studies in various transparent dielectric media.

Room-temperature single-photon sources with definite circular and linear polarizations based on single-emitter fluorescence in liquid crystal hosts

International Nuclear Information System (INIS)

Winkler, Justin M; Lukishova, Svetlana G; Bissell, Luke J

2013-01-01

Definite circular and linear polarizations of room-temperature single-photon sources, which can serve as polarization bases for quantum key distribution, are produced by doping planar-aligned liquid crystal hosts with single fluorescence emitters. Chiral 1-D photonic bandgap microcavities for a single handedness of circularly polarized light were prepared from both monomeric and oligomeric cholesteric liquid crystals. Fluorescent emitters, such as nanocrystal quantum dots, nitrogen vacancy color centers in nanodiamonds, and rare-earth ions in nanocrystals, were doped into these microcavity structures and used to produce circularly polarized fluorescence of definite handedness. Additionally, we observed circularly polarized resonances in the spectrum of nanocrystal quantum dot fluorescence at the edge of the cholesteric microcavity's photonic stopband. For this polarization we obtained a ∼4.9 enhancement of intensity compared to the polarization of the opposite handedness that propagates without photonic bandgap microcavity effects. Such a resonance is indicative of coupling of quantum dot fluorescence to the cholesteric microcavity mode. We have also used planar-aligned nematic liquid crystal hosts to align DiI dye molecules doped into the host, thereby providing a single-photon source of linear polarization of definite direction. Antibunching is demonstrated for fluorescence of nanocrystal quantum dots, nitrogen vacancy color centers, and dye molecules in these liquid crystal structures.

Crystal growth, characterization and theoretical studies of alkaline earth metal-doped tetrakis(thiourea)nickel(II) chloride.

Science.gov (United States)

Agilandeshwari, R; Muthu, K; Meenatchi, V; Meena, K; Rajasekar, M; Aditya Prasad, A; Meenakshisundaram, S P

2015-02-25

The influence of Sr(II)-doping on the properties of tetrakis(thiourea)nickel(II) chloride (TTNC) has been described. The reduction in the intensity observed in powder X-ray diffraction of doped specimen and slight shifts in vibrational frequencies of doped specimens confirm the lattice stress as a result of doping. Surface morphological changes due to doping of the Sr(II) are observed by scanning electron microscopy. The incorporation of metal into the host crystal lattice was confirmed by energy dispersive X-ray spectroscopy. Lattice parameters are determined by single crystal XRD analysis. The thermogravimetric and differential thermal analysis studies reveal the purity of the materials and no decomposition is observed up to the melting point. The nonlinear optical properties of the doped and undoped specimens were studied. Theoretical calculations were performed using the Density functional theory (DFT) method with B3LYP/LANL2DZ as the basis set. The molecular geometry and vibrational frequencies of TTNC in the ground state were calculated and the observed structural parameters of TTNC are compared with parameters obtained from single crystal X-ray studies. The atomic charge distributions are obtained by Mulliken charge population analysis. The first-order molecular hyperpolarizability, polarizability and dipole moment were derived. Copyright © 2014 Elsevier B.V. All rights reserved.

Crystal growth and evaluation of scintillation properties of Eu and alkali-metal co-doped LiSrAlF{sub 6} single crystals for thermal neutron detector

Energy Technology Data Exchange (ETDEWEB)

Wakahara, Shingo; Yokota, Yuui; Yamaji, Akihiro; Fujimoto, Yutaka; Sugiyama, Makoto; Kurosawa, Shunsuke [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe), 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Pejchal, Jan [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Institute of Physics AS CR, Cukrovarnicka 10, Prague 16253 (Czech Republic); Kawaguchi, Noriaki [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Tokuyama, Co. Ltd., Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 (Japan); Fukuda, Kentaro [Tokuyama, Co. Ltd., Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 (Japan); Yoshikawa, Akira [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

2012-12-15

In recent work, Na co-doping have found to improve the light output of Eu doped LiCaAlF{sub 6} (Eu:LiCAF) for thermal neutron scintillator. We grew Eu 2% and alkali metal 1% co-doped LiSAF crystals by Micro-Pulling down method to understand the effect of alkali metal co-doping on scintillation properties and mechanism compared with LiCAF. In photo- and {alpha}-ray induced radio-luminescence spectra of the all grown crystals, the emissions from d-f transition of Eu{sup 2+} were observed. Without relation to excitation source, decay times of co-doped LiSAF were longer than Eu only doped one. The light yield of Na, K and Cs co-doped LiSAF under {sup 252}Cf neutron excitation were improved. Especially, K co-doped Eu:LiSAF reached 33200 ph/n, which outperformed Eu only doped one by approximately 20% (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of Na co-doping on optical and scintillation properties of Eu:LiCaAlF.sub.6./sub. scintillator single crystals

Czech Academy of Sciences Publication Activity Database

Tanaka, Ch.; Yokota, Y.; Kurosawa, S.; Yamaji, A.; Ohashi, Y.; Kamada, K.; Nikl, Martin; Yoshikawa, A.

2017-01-01

Roč. 468, Jun (2017), s. 399-402 ISSN 0022-0248 R&D Projects: GA MŠk(CZ) LH14266 Institutional support: RVO:68378271 Keywords : doping * single crystal growth * lithium compounds * scintillator materials Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

Crystal-field analysis of U3+ ions in K2LaX5 (X=Cl, Br or I) single crystals

Science.gov (United States)

Karbowiak, M.; Edelstein, N.; Gajek, Z.; Drożdżyński, J.

1998-11-01

An analysis of low temperature absorption spectra of U3+ ions doped in K2LaX5 (X=Cl, Br or I) single crystals is reported. The energy levels of the U3+ ion in the single crystals were assigned and fitted to a semiempirical Hamiltonian representing the combined atomic and crystal-field interactions at the Cs symmetry site. An analysis of the nephelauxetic effect and crystal-field splittings in the series of compounds is also reported.

Electric field influence on exciton absorption of Er doped and undoped InSe single crystals

International Nuclear Information System (INIS)

Guerbulak, B; Kundakci, M; Ates, A; Yildirim, M

2007-01-01

Undoped InSe and Er doped InSe (InSe:Er) single crystals were grown by using the Stockbarger method. Ingots had no cracks and voids on the surface. The absorption measurements were carried out in InSe and InSe:Er samples for U=0 and U=30 V in the temperature range 10-320 K with a step of 10 K. Electric field effects on excitons are observed in InSe and InSe:Er single crystals. The absorption edge shifted towards longer wavelengths and decreased intensity in absorption spectra under an electric field E≅5.9 kV cm -1 . The applied electric field caused a shifting and a decreasing of intensity in the absorption spectra. The shifting of the absorption edge can be explained on the basis of the Franz-Keldysh effect (FKE) or thermal heating of the sample under the electric field. At 10 and 320 K, the first exciton energies for InSe were calculated as 1.336 and 1.291 eV for zero voltage and 1.331 and 1.280 eV for electric field and InSe:Er as 1.329 and 1.251 eV for zero voltage and 1.318 and 1.248 eV for electric field, respectively

EPR and optical absorption study of Cu{sup 2+} doped lithium sulphate monohydrate (LSMH) single crystals

Energy Technology Data Exchange (ETDEWEB)

Sheela, K. Juliet; Subramanian, P., E-mail: psubramaniangri@gmail.com [Department of Physics, Gandhigram Rural Institute-Deemed University, Gandhigram, Dindigul-624302, Tamilnadu (India); Krishnan, S. Radha; Shanmugam, V. M. [CSIR-Central Electrochemical Research Institute, Karaikudi-63006, Tamilnadu (India)

2016-05-23

EPR study of Cu{sup 2+} doped NLO active Lithium Sulphate monohydrate (Li{sub 2}SO{sub 4.}H{sub 2}O) single crystals were grown successfully by slow evaporation method at room temperature. The principal values of g and A tensors indicate existence of orthorhombic symmetry around the Cu{sup 2+} ion. From the direction cosines of g and A tensors, the locations of Cu{sup 2+} in the lattice have been identified as interstitial site. Optical absorption confirms the rhombic symmetry and ground state wave function of the Cu{sup 2+} ion in a lattice as d{sub x2-y2}.

Luminescence properties and gamma-ray response of the Ce and Ca co-doped (Gd,Y)F3 single crystals

International Nuclear Information System (INIS)

Kamada, Kei; Yanagida, Takayuki; Fujimoto, Yutaka; Fukabori, Akihiro; Yoshikawa, Akira; Nikl, Martin

2011-01-01

The Ca0.5% and Ce1%, 3%, 7%, 10% co-doped Gd 0.5 Y 0.5 F 3 single crystals were grown by the μ-PD method. In the Ca0.5% and Ce3% co-doped sample, Ce 3+ -perturbed luminescence at 380 nm was observed with 32.4 ns photoluminescence decay time. The energy transfer in the sequence of the regular Ce 3+ → (Gd 3+ ) n → the perturbed Ce 3+ sites was evidenced through observation of decay time shortening of the regular Ce 3+ and Gd 3+ centers and the change between the Gd 3+ and Ce 3+ -perturbed emission intensity. The gamma-ray excited scintillation response of the Ca0.5%, Ce7% co-doped Gd 0.5 Y 0.5 F 3 sample was investigated with the help of the pulse height spectra and the light yield, energy resolution and non-proportionality was evaluated in the interval of energies of 59.4-1274 keV.

Iron single crystal growth from a lithium-rich melt

Science.gov (United States)

Fix, M.; Schumann, H.; Jantz, S. G.; Breitner, F. A.; Leineweber, A.; Jesche, A.

2018-03-01

α -Fe single crystals of rhombic dodecahedral habit were grown from a Li84N12Fe∼3 melt. Crystals of several millimeter along a side form at temperatures around T ≈ 800 ° C. Upon further cooling the growth competes with the formation of Fe-doped Li3N. The b.c.c. structure and good sample quality of α -Fe single crystals were confirmed by X-ray and electron diffraction as well as magnetization measurements and chemical analysis. A nitrogen concentration of 90 ppm was detected by means of carrier gas hot extraction. Scanning electron microscopy did not reveal any sign of iron nitride precipitates.

EPR and optical investigation of Mn2+ doped L-histidine-4-nitrophenolate 4-nitrophenol single crystal

Science.gov (United States)

Prabakaran, R.; Subramanian, P.

2018-04-01

Single crystals of L-histidine-4-nitrophenolate 4-nitrophenol[LHFNP] complex doped with Mn2+ were grown by the slow evaporation method at room temperature. The EPR spectrum reveals the entry of one Mn2+ ion in the lattice. The angular variation plot was drawn between the angles and the magnetic field position. The spin Hamiltonian parameters were obtained by EPR-NMR program. The D and E values show the rhombic field around the ion and is an interstitial one. The g value obtained here suggests that the Mn2+ ion experiences a strong field and there is a transfer of electron from the metal ion to the ligand atom. The optical absorption study shows various bands and are assigned to the transition from the ground state 6A1g(S). The Racah and crystal field parameters have also been evaluated and fitted to the experimental values. The Racah parameter shows the covalent bonding between the metal ion to the ligand.

Effects of post-annealing and cobalt co-doping on superconducting properties of (Ca,Pr)Fe{sub 2}As{sub 2} single crystals

Energy Technology Data Exchange (ETDEWEB)

Okada, T., E-mail: 8781303601@mail.ecc.u-tokyo.ac.jp; Ogino, H.; Yakita, H.; Yamamoto, A.; Kishio, K.; Shimoyama, J.

2014-10-15

Highlights: • Post-annealing at 400 °C killed superconductivity for Co-free sample. • Pr,Co co-doped samples maintained superconductivity even after annealing. • Two-step superconducting transition was observed via magnetization measurement. • Bulk superconductivity of low-T{sub c} component was confirmed. • Superconducting volume fraction of high-T{sub c} component was always small. - Abstract: In order to clarify the origin of anomalous superconductivity in (Ca,RE)Fe{sub 2}As{sub 2} system, Pr doped and Pr,Co co-doped CaFe{sub 2}As{sub 2} single crystals were grown by the FeAs flux method. These samples showed two-step superconducting transition with T{sub c1} = 25–42 K, and T{sub c2} < 16 K, suggesting that (Ca,RE)Fe{sub 2}As{sub 2} system has two superconducting components. Post-annealing performed for these crystals in evacuated quartz ampoules at various temperatures revealed that post-annealing at ∼400 °C increased the c-axis length for all samples. This indicates that as-grown crystals have a certain level of strain, which is released by post-annealing at ∼400 °C. Superconducting properties also changed dramatically by post-annealing. After annealing at 400 °C, some of the co-doped samples showed large superconducting volume fraction corresponding to the perfect diamagnetism below T{sub c2} and high J{sub c} values of 10{sup 4}–10{sup 5} A cm{sup −2} at 2 K in low field, indicating the bulk superconductivity of (Ca,RE)Fe{sub 2}As{sub 2} phase occurred below T{sub c2}. On the contrary, the superconducting volume fraction above T{sub c2} was always very small, suggesting that 40 K-class superconductivity observed in this system is originating in the local superconductivity in the crystal.

Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

Directory of Open Access Journals (Sweden)

I. E. Paulauskas

2011-01-01

Full Text Available The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.

Energy transfer and 2.0 μm emission in Tm{sup 3+}/Ho{sup 3+} co-doped α-NaYF{sub 4} single crystals

Energy Technology Data Exchange (ETDEWEB)

Feng, Zhigang; Yang, Shuo [Key laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang 315211 (China); Xia, Haiping, E-mail: hpxcm@nbu.edu.cn [Key laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang 315211 (China); Wang, Cheng; Jiang, Dongsheng; Zhang, Jian; Gu, Xuemei; Zhang, Yuepin [Key laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang 315211 (China); Chen, Baojiu, E-mail: bjchen@dlmu.edu.cn [Department of Physics, Dalian Maritime University, Dalian, Liaoning Province 116026 (China); Jiang, Haochuan [Ningbo Institute of Materials Technology and Engineering, the Chinese Academy of Sciences, Ningbo, Zhejiang 315211 (China)

2016-04-15

Highlights: • Cubic NaYF{sub 4} single crystals co-doped with ∼1.90 mol% Tm{sup 3+} and various Ho{sup 3+} concentrations were grown by Bridgman method. • The maximum fluorescence lifetime was 23.23 ms for Tm{sup 3+} (1.90 mol%)/Ho{sup 3+} (3.89 mol%) co-doped α-NaYF{sub 4}. • The obtained energy transfer rate (W{sub ET}) and energy transfer efficiency (η) of Tm{sup 3+}:{sup 3}F{sub 4} are 1077 s{sup −1} and 95.0%, respectively. • The maximum emission cross section reached 1.06 × 10{sup −20} cm{sup 2}. - Abstract: Cubic NaYF{sub 4} single crystals co-doped with ∼1.90 mol% Tm{sup 3+} and various Ho{sup 3+} concentrations were grown by Bridgman method. The energy transfer from Tm{sup 3+} to Ho{sup 3+} and the optimum fluorescence emission around 2.04 μm of Ho{sup 3+} ion were investigated based on the measured absorption spectra, emission spectra, emission cross section and decay curves under excitation of 800 nm LD. The emission intensity at 2.04 μm increased with the increase of Ho{sup 3+} concentration from 0.96 mol% to 3.89 mol% when the concentration of Tm{sup 3+} was held constantly at ∼1.90 mol%. Moreover, the maximum emission cross section reached 1.06 × 10{sup −20} cm{sup 2} and the maximum fluorescence lifetime was 23.23 ms for Tm{sup 3+}(1.90 mol%)/Ho{sup 3+}(3.89 mol%) co-doped one. According to the measured lifetime of Tm{sup 3+} single-doped and Tm{sup 3+}/Ho{sup 3+} co-doped samples, the maximum energy transfer efficiency of Tm{sup 3+}:{sup 3}F{sub 4} level was 95.0%. Analysis on the fluorescence dynamics indicated that electric dipole–dipole is dominant for the energy transfer from Tm{sup 3+} to Ho{sup 3+}.

Correlation between modulation structure and electronic inhomogeneity on Pb-doped Bi-2212 single crystals

International Nuclear Information System (INIS)

Sugimoto, A.; Kashiwaya, S.; Eisaki, H.; Yamaguchi, H.; Oka, K.; Kashiwaya, H.; Tsuchiura, H.; Tanaka, Y.

2005-01-01

The correlation between nanometer-size electronic states and surface structure is investigated by scanning tunneling microscopy/spectroscopy (STM/S) on Pb-doped Bi 2-x Pb x Sr 2 CaCu2O 8+y (Pb-Bi-2212) single crystals. The advantage of the Pb-Bi-2212 samples is that the modulation structure can be totally or locally suppressed depending on the Pb contents and annealing conditions. The superconducting gap (Δ) distribution on modulated Pb-Bi-2212 samples showed the lack of correlation with modulation structure except a slight reduction of superconducting island size for the b-axis direction. On the other hand, the optimal doped Pb-Bi-2212 (x = 0.6) samples obtained by reduced-annealing showed totally non-modulated structure in topography, however, the spatial distribution of Δ still showed inhomogeneity of which features were quite similar to those of modulated samples. These results suggest that the modulation structure is not the dominant origin of inhomogeneity although it modifies the streaky Δ structure sub-dominantly. From the gap structure variation around the border of narrow gap and broad gap regions, a trend of the coexistence of two separated phases i.e., superconducting phase and pseudogap like phase, is detected

Doping with lead of single crystals of solid solutions of Sbsub(1,5)Bisub(0,5)Tlsub(3)-Bisub(2)Sesub(3)

International Nuclear Information System (INIS)

Abrikosov, N.Kh.; Ivanova, L.D.; Polikarpova, N.V.; Galechyan, M.G.

1984-01-01

By the Czochralski method with liquid phase additional feeding single crystals of solid solutions of the Sbsub(1.5)Bisub(0.5)Tesub(3)-Bisub(2)Sesub(3) system with 0, 10 and 15 mol.% of Bi 2 Se 3 content doped with lead up to 1.37 at/cm 3 are grown. Lead content in crystals and alloys is determined by the atom-abmethod using the scale of standard solutions. It has been found that the effective coefficient of lead distribution in investigated solutions is approximately 0.5. It is shown that lead addition leads to increase of electric conductivity and heat conductivity and decrease of thermoelectric coeffcient at the expense of current carriers concentration growth, the lead in crystals of solid solutions of the Sbsub(1.5)Bisub(0.5)Tesub(3)-Bisub(2)Sesub(3) system being a single charge acceptor

Photoluminescence of Copper-Doped Lithium Niobate Crystals

Science.gov (United States)

Gorelik, V. S.; Pyatyshev, A. Yu.; Sidorov, N. V.

2018-05-01

The photoluminescence (PL) of copper-doped lithium niobate single crystals is studied using different UV-Vis light-emitting diodes and a pulse-periodic laser with a wavelength of 266 nm as excitation radiation sources. With the resonance excitation from a 527-nm light-emitting diode, the intensity of PL increases sharply (by two orders of magnitude). When using a 467-nm light-emitting diode for excitation, the PL spectrum is characterized by the presence of multiphonon lines in the range of 520-620 nm.

Single-crystal growth of ceria-based materials; Einkristallzuechtung von Materialien auf der Basis von Cerdioxid

Energy Technology Data Exchange (ETDEWEB)

Ulbrich, Gregor

2015-07-23

In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.

Guiding and amplification properties of rod-type photonic crystal fibers with sectioned core doping

Science.gov (United States)

Selleri, S.; Poli, F.; Passaro, D.; Cucinotta, A.; Lægsgaard, J.; Broeng, J.

2009-05-01

Rod-type photonic crystal fibers are large mode area double-cladding fibers with an outer diameter of few millimeters which can provide important advantages for high-power lasers and amplifiers. Numerical studies have recently demonstrated the guidance of higher-order modes in these fibers, which can worsen the output beam quality of lasers and amplifiers. In the present analysis a sectioned core doping has been proposed for Ybdoped rod-type photonic crystal fibers, with the aim to improve the higher-order mode suppression. A full-vector modal solver based on the finite element method has been applied to properly design the low refractive index ring in the fiber core, which can provide an increase of the differential overlap between the fundamental and the higher-order mode. Then, the gain competition among the guided modes along the Yb-doped rod-type fibers has been investigated with a spatial and spectral amplifier model. Simulation results have shown the effectiveness of the sectioned core doping in worsening the higher-order mode overlap on the doped area, thus providing an effective single-mode behavior of the Yb-doped rod-type photonic crystal fibers.

Improved ferroelectric and pyroelectric parameters in iminodiacetic acid doped TGS crystal

Science.gov (United States)

Rai, Chitharanjan; Sreenivas, K.; Dharmaprakash, S. M.

2010-01-01

Single crystals of Iminodiacetic acid (HN(CH 2COOH) 2) doped Triglycine sulphate (IDATGS) has been grown from aqueous solution at constant temperature by slow evaporation technique. The concentration of the dopant in the TGS solution was 2 mol%. The X-ray diffraction analysis indicates that there is significant change in the lattice parameters compared to pure TGS crystal. The IDATGS crystal has larger transition temperature and observed higher and uniform figure of merit over most part of the ferroelectric phase. These crystals also exhibit higher internal bias field and micro-hardness number compared to pure TGS. Therefore IDATGS may be a potential material for IR detectors.

Bulk growth of undoped and Nd3+ doped zinc thiourea chloride (ZTC) monocrystal: Exploring the remarkably enhanced structural, optical, electrical and mechanical performance of Nd3+ doped ZTC crystal for NLO device applications

Science.gov (United States)

Anis, Mohd; Muley, Gajanan. G.

2017-05-01

In current scenario good quality crystals are demanded for NLO device application hence present communication is aimed to grow bulk crystal and investigate the doping effect of rare earth element Nd3+ on structural, linear-nonlinear optical, luminescence, mechanical and dielectric properties of zinc thiourea chloride (ZTC) crystal. The ZTC crystal of dimension 21×10×8 mm3 and the Nd3+ doped ZTC crystal of dimension 27×17×5 mm3 have been grown from aqueous solution by slow evaporation technique. The elemental analysis of Nd3+ doped ZTC single crystal has been performed by means of energy dispersive spectroscopic technique. The powder X-ray diffraction technique has been employed to confirm the crystalline phase and identify the effect of Nd3+ doping on structural dimensions of ZTC crystal. The grown crystals have been characterized by UV-Vis-NIR study in the range of 190-1100 nm to ascertain the enhancement in optical transparency of ZTC crystal facilitated by dopant Nd3+. The recorded transmittance data has been utilized to investigate the vital optical constants of grown crystals. The second order nonlinear optical behavior of grown crystals has been evaluated by means of Kurtz-Perry test and the second harmonic generation efficiency of Nd3+ doped ZTC crystal is found to be 1.24 times higher than ZTC crystal. The luminescence analysis has been performed to examine the electronic purity and the color centered photoluminescence emission nature of pure and Nd3+ doped ZTC crystals. The influence of Nd3+ ion on mechanical behavior of ZTC crystal has been investigated by means of microhardness studies. The nature of dielectric constant and dielectric loss of pure and Nd3+ doped ZTC crystal has been examined in the range of 40-100 °C under dielectric study. The Z-scan technique has been employed using the He-Ne laser to investigate the third order nonlinear optical (TONLO) nature of Nd3+ doped ZTC single crystal. The magnitude of TONLO susceptibility, absorption

Magnetism and superconductivity in CeFe2-xTxAs2 (T = Co and Ni) single crystals

International Nuclear Information System (INIS)

Thamizhavel, A.

2010-01-01

Single crystals of pure and transition metal doped CaFe 2- x T x As 2 (T = Co and Ni) have been grown by flux method using molten Sn as solvent. The magnetic and superconducting properties of the grown crystals were studied by measuring the electrical resistivity, magnetic susceptibility and neutron diffraction measurements. A spin density wave (SDW)/structural transition is observed at 170 K for the pure CaFe 2 As 2 single crystal and it gets suppressed with T (Co and Ni) doping. For an optimum dopant concentration of x = 0.06, the sample becomes superconducting. From the detailed studies on CaFe 2- x Ni x As 2 single crystals we have constructed a magnetic phase diagram. (author)

Reentrant metal-insulator transition in the Cu-doped manganites La1-x Pbx MnO3 (x˜0.14) single crystals

Science.gov (United States)

Zhao, B. C.; Song, W. H.; Ma, Y. Q.; Ang, R.; Zhang, S. B.; Sun, Y. P.

2005-10-01

Single crystals of La1-x Pbx Mn1-y-z Cuy O3 ( x˜0.14 ; y=0 ,0.01,0.02,0.04,0.06; z=0.02 ,0.08,0.11,0.17,0.20) are grown by the flux growth technique. The effect of Cu doping at the Mn-site on magnetic and transport properties is studied. All studied samples undergo a paramagnetic-ferromagnetic transition. The Curie temperature TC decreases and the transition becomes broader with increasing Cu-doping level. The high-temperature insulator-metal (I-M) transition moves to lower temperature with increasing Cu-doping level. A reentrant M-I transition at the low temperature T* is observed for samples with y⩾0.02 . In addition, T* increases with increasing Cu-doping level and is not affected by applied magnetic fields. Accompanying the appearance of T* , there exists a large, almost constant magnetoresistance (MR) below T* except for a large MR peak near TC . This reentrant M-I transition is ascribed to charge carrier localization due to lattice distortion caused by the Cu doping at Mn sites.

Radiation defects produced by neutron irradiation in germanium single crystals

International Nuclear Information System (INIS)

Fukuoka, Noboru; Honda, Makoto; Atobe, Kozo; Yamaji, Hiromichi; Ide, Mutsutoshi; Okada, Moritami.

1992-01-01

The nature of defects produced in germanium single crystals by neutron irradiation at 25 K was studied by measuring the electrical resistivity. It was found that two levels located at E c -0.06 eV and E c -0.13 eV were introduced in an arsenic-doped sample. Electron traps at E c -0.10eV were observed in an indium-doped sample. The change in electrical resistivity during irradiation was also studied. (author)

Scintillation and optical properties of Pb-doped YCa{sub 4}O(BO{sub 3}){sub 3} crystals

Energy Technology Data Exchange (ETDEWEB)

Fujimoto, Yutaka, E-mail: fuji-you@tagen.tohoku.ac.jp [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); JSPS, 8 Ichibanmachi, Chiyoda-ku, Tokyo 102-8472 (Japan); Yanagida, Takayuki; Yokota, Yuui [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Kawaguchi, Noriaki [Tokuyama Corporation, 3 Shibuya Shibuya-ku, Tokyo 150-8383 (Japan); Fukuda, Kentaro [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Tokuyama Corporation, 3 Shibuya Shibuya-ku, Tokyo 150-8383 (Japan); Totsuka, Daisuke [Nihon Kessho Kogaku Co., Ltd., 810-5 Nobe-cho Tatebayashi Gunma (Japan); Watanabe, Kenichi; Yamazaki, Atsushi [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yoshikawa, Akira [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); NICHe, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

2011-10-01

This communication reports optical properties and radiation responses of Pb{sup 2+} 0.5 and 1.0 mol%-doped YCa{sub 4}O(BO{sub 3}){sub 3} (YCOB) single crystals grown by the micro-pulling-down ({mu}-PD) method for neutron scintillator applications. The crystals had no impurity phases according to the results of X-ray powder diffraction. These Pb{sup 2+}-doped crystals demonstrated blue-light luminescence at 330 nm because of Pb{sup 2+1}S{sub 0}-{sup 3}P{sub 0,1} transition in the photoluminescence spectra. The main emission decay component was determined to be about 250-260 ns under 260 nm excitation wavelength. When irradiated by a {sup 252}Cf source, the relative light yield of 0.5% Pb{sup 2+}-doped crystal was about 300 ph/n that was determined using the light yield of a reference Li-glass scintillator.

Luminescence properties and gamma-ray response of the Ce and Ca co-doped (Gd,Y)F{sub 3} single crystals

Energy Technology Data Exchange (ETDEWEB)

Kamada, Kei, E-mail: k-kamada@furukawakk.co.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai (Japan); Furukawa Co. Ltd. (Japan); Yanagida, Takayuki; Fujimoto, Yutaka; Fukabori, Akihiro [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai (Japan); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai (Japan); New Industry Creation Hatchery Center, Tohoku University, Sendai (Japan); Nikl, Martin [Institute of Physics AS CR (Czech Republic)

2011-12-11

The Ca0.5% and Ce1%, 3%, 7%, 10% co-doped Gd{sub 0.5}Y{sub 0.5}F{sub 3} single crystals were grown by the {mu}-PD method. In the Ca0.5% and Ce3% co-doped sample, Ce{sup 3+}-perturbed luminescence at 380 nm was observed with 32.4 ns photoluminescence decay time. The energy transfer in the sequence of the regular Ce{sup 3+}{yields} (Gd{sup 3+}){sub n}{yields} the perturbed Ce{sup 3+} sites was evidenced through observation of decay time shortening of the regular Ce{sup 3+} and Gd{sup 3+} centers and the change between the Gd{sup 3+} and Ce{sup 3+}-perturbed emission intensity. The gamma-ray excited scintillation response of the Ca0.5%, Ce7% co-doped Gd{sub 0.5}Y{sub 0.5}F{sub 3} sample was investigated with the help of the pulse height spectra and the light yield, energy resolution and non-proportionality was evaluated in the interval of energies of 59.4-1274 keV.

Thermal, Dielectric Studies on Pure and Amino Acid L-Glutamic Acid, L-Histidine L-Valine Doped Potassium Dihydrogen Phosphate Single Crystals

Science.gov (United States)

Kumaresan, P.; Babu, S. Moorthy; Anbarasan, P. M.

Amino acids (L-Glutamic acid, L-Histidine, L-Valine) doped potassium dihydrogen phosphate crystals were grown by the solution growth technique. Slow cooling as well as slow evaporation methods were employed to grow these crystals. The concentration of dopants in the mother solution was varied from 0.1 mole % to 10 mole %. The solubility data for all dopant concentrations were determined. The variation in pH and the corresponding habit modification of the grown crystals were characterized with UV - VIS, FT-IR and SHG trace elements, and dielectric studies reveal slight distortion of lattice parameter for the heavily doped KDP crystals. TGA-DTA studies reveal good thermal stability. The dopants increase the hardness value of the material, which also depends on the concentration of the dopants. Amino acids doping improved the NLO properties. The detailed results on the spectral parameters, habit modifications and constant values will be presented.

Electron paramagnetic resonance investigations of Fe3+ doped layered TiInS2 and TiGaSe2 single crystals

International Nuclear Information System (INIS)

Faik, Mikailov; Bulat, Rameev; Sinan, Kazan; Bekir, Aktash; Faik, Mikailov; Bulat, Rameev

2005-01-01

Full text : TiInS 2 and TiGaSe 2 single crystals doped by paramagnetic Fe ions have been studied at room temperature by Electron Paramagnetic Resonance (EPR) technique. A fine structure of EPR spectra of paramagnetic Fe 3 + ions was observed. The spectra were interpreted to correspond to the transitions among spin multiplet which are splitted by the local ligand crystal field (CF) of orthorhombic symmetry. Four equivalent Fe 3 + centers have been observed in the EPR spectra and the local symmetry of crystal field at the Fe 3 + site and CF parameters were determined. It was established that symmetry axis of the axial component in the CF is making an angle of about 48 and 43 degree with the plane of layers of TiInS 2 and TiGaSe 2 crystals respectively. Experimental results indicate that the Fe ions substitute In (GA) at the center of InS 4 (GaSe 4 ) tetrahedrons, and the rhombic distortion of the CF is caused by the TI ions located in the trigonal cavities between the tethedral complexes

Effect of rare-earth dopants on the growth and structural, optical, electrical and mechanical properties of L-arginine phosphate single crystals

International Nuclear Information System (INIS)

Arjunan, S.; Bhaskaran, A.; Kumar, R. Mohan; Mohan, R.; Jayavel, R.

2010-01-01

Research highlights: → Thorium, Lanthanum and Cerium rare-earth ions were doped with L-arginine phosphate material and the crystals were grown by slow evaporation technique. → The transparency of the rare-earth doped LAP crystals has enhanced compared to pure LAP. → The powder SHG measurements revealed that the SHG output of rare-earth doped LAP crystals increases considerably compared to that of LAP. → Vicker's hardness number of as-grown crystal of LAP is higher than that of rare-earth doped LAP crystals. - Abstract: Effect of Thorium, Lanthanum and Cerium rare-earth ions on the growth and properties of L-arginine phosphate single crystals has been reported. The incorporation of rare-earth dopants into the L-arginine phosphate crystals is confirmed by Inductively Coupled Plasma-Mass Spectroscopy analysis. The unit cell parameters for pure and rare-earth doped L-arginine phosphate crystals have been estimated by powder X-ray diffraction studies. UV-visible studies revealed the transmittance percentage and cut-off wavelengths of the grown crystals. Powder second harmonic generation measurement has been carried out for pure and doped L-arginine phosphate crystals. The dielectric behavior of the grown crystals was analyzed for different frequencies at room temperature. The mechanical properties have been determined for pure and the doped L-arginine phosphate crystals.

Single-mode amplification in Yb-doped rod-type photonic crystal fibers for high brilliance lasers

DEFF Research Database (Denmark)

Poli, F.; Lægsgaard, Jesper; Passaro, D.

2009-01-01

This paper presents the effect of a low refractive index ring in the Yb-doped rod-type photonic crystal fibre core on the guided mode propagation and analyzed through a spatial and spectral amplifier model. The ring provides a higher differential overlap between the fundamental mode (FM...... to identify a proper ring characteristic that is width, position and refractive index. Then rod-type PCF designs have been optimized with a full-vector modal solver based on the finite-element method. Then, the amplification properties of the Yb-doped rod-type PCFs have been investigated by assuming a forward...

Optical characterization of Pr3+-doped yttria-stabilized zirconia single crystals

International Nuclear Information System (INIS)

Savoini, B.; Munoz Santiuste, J.E.; Gonzalez, R.

1997-01-01

The optical absorption and fluorescence of Pr 3+ ions in yttria-stabilized zirconia single crystals are investigated. Fluorescence emissions from the 1 D 2 level are clearly dominant and low intensity emission lines from the 3 P 0 and 1 G 4 states are also observed. Analysis with the Judd-Ofelt theory of the absorption intensities has been made assuming that only ∼40% of the praseodymium ions contribute to the optical absorption bands. Quantum efficiency values of η( 3 P 0 )∼0.2 and η( 1 D 2 )∼ 1 are obtained at room temperature. 1 D 2 fluorescence quenching has been observed in heavily-doped samples due to cross relaxation processes among neighboring Pr 3+ ions. Analysis using the Inokuti-Hirayama model shows that electric dipole-dipole interactions are mainly responsible for the quenching effect. Pr 3+ ions are present in seven and sixfold configurations with a statistical distribution. The energy position of the 4f5d configuration is very different for each center. The fluorescence dynamics is explained by a mechanism involving thermally assisted population of the 3 P 1,2 + 1 I 6 upper levels and fast relaxation to the 1 D 2 level via states of the excited 4f5d configuration. copyright 1997 The American Physical Society

Ce-doped LuAG single-crystal fibers grown from the melt for high-energy physics

CERN Document Server

Xu, X; Moretti, F; Pauwels, K; Lecoq, P; Auffray, E; Dujardin, C

2014-01-01

Under a stationary stable regime undoped and Ce-doped LuAG (Lu3Al5O12) single-crystal fibers were grown by a micro-pulling-down technique. The meniscus length corresponding to the equilibrium state was <200 mu m. Fluctuations in the fiber composition and pulling rate were found to have a significant effect on the properties of the fibers grown. A great improvement in the performance was found in samples containing low Ce concentrations (<= 0.1 at.\\%) and produced using pulling rates <0.5 mm min(-1). Under such conditions a good lateral surface fiber quality was obtained and light propagation was significantly improved. Conversely, a high Ce concentration and a high pulling rate resulted in a strong degradation of the fiber surface quality causing defects to appear and a decrease in light output. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Structural Characterization of Doped GaSb Single Crystals by X-ray Topography

Energy Technology Data Exchange (ETDEWEB)

Honnicke, M.G.; Mazzaro, I.; Manica, J.; Benine, E.; M da Costa, E.; Dedavid, B. A.; Cusatis, C.; Huang, X. R.

2009-09-13

We characterized GaSb single crystals containing different dopants (Al, Cd and Te), grown by the Czochralski method, by x-ray topography and high angular resolution x-ray diffraction. Lang topography revealed dislocations parallel and perpendicular to the crystal's surface. Double-crystal GaSb 333 x-ray topography shows dislocations and vertical stripes than can be associated with circular growth bands. We compared our high-angular resolution x-ray diffraction measurements (rocking curves) with the findings predicted by the dynamical theory of x-ray diffraction. These measurements show that our GaSb single crystals have a relative variation in the lattice parameter ({Delta}d/d) on the order of 10{sup -5}. This means that they can be used as electronic devices (detectors, for example) and as x-ray monochromators.

Effect of Li and NH4 doping on the crystal perfection, second harmonic generation efficiency and laser damage threshold of potassium pentaborate crystals

Science.gov (United States)

Vigneshwaran, A. N.; Kalainathan, S.; Raja, C. Ramachandra

2018-03-01

Potassium pentaborate (KB5) is an excellent nonlinear optical material especially in the UV region. In this work, Li and NH4 doped KB5 crystals were grown using slow evaporation solution growth method. The incorporation of dopant has been confirmed and analysed by Energy dispersive X-ray analysis (EDAX), Inductively coupled plasma (ICP) analysis and Raman spectroscopy. The crystalline perfection of pure and doped KB5 crystals was studied by High resolution X-ray diffraction (HRXRD) analysis. Structural grain boundaries were observed in doped crystals. Second harmonic generation was confirmed for pure and doped crystals and output values revealed the enhancement of SHG efficiency in doped crystals. Resistance against laser damage was carried out using 1064 nm Nd-YAG laser of pulse width 10 ns. The laser damage threshold value is increased in Li doped crystal and decreased in NH4 doped crystal when compared to pure KB5 crystal.

Effect of rare-earth dopants on the growth and structural, optical, electrical and mechanical properties of L-arginine phosphate single crystals

Energy Technology Data Exchange (ETDEWEB)

Arjunan, S., E-mail: arjunan_hce@yahoo.co.i [Department of Physics, Sri Ramachandra University, Porur, Chennai (India); Bhaskaran, A. [Department of Physics, Dr. Ambedkar Government College, Chennai (India); Kumar, R. Mohan; Mohan, R. [Department of Physics, Presidency College, Chennai (India); Jayavel, R. [Crystal Growth Centre, Anna University, Chennai (India)

2010-09-17

Research highlights: {yields} Thorium, Lanthanum and Cerium rare-earth ions were doped with L-arginine phosphate material and the crystals were grown by slow evaporation technique. {yields} The transparency of the rare-earth doped LAP crystals has enhanced compared to pure LAP. {yields} The powder SHG measurements revealed that the SHG output of rare-earth doped LAP crystals increases considerably compared to that of LAP. {yields} Vicker's hardness number of as-grown crystal of LAP is higher than that of rare-earth doped LAP crystals. - Abstract: Effect of Thorium, Lanthanum and Cerium rare-earth ions on the growth and properties of L-arginine phosphate single crystals has been reported. The incorporation of rare-earth dopants into the L-arginine phosphate crystals is confirmed by Inductively Coupled Plasma-Mass Spectroscopy analysis. The unit cell parameters for pure and rare-earth doped L-arginine phosphate crystals have been estimated by powder X-ray diffraction studies. UV-visible studies revealed the transmittance percentage and cut-off wavelengths of the grown crystals. Powder second harmonic generation measurement has been carried out for pure and doped L-arginine phosphate crystals. The dielectric behavior of the grown crystals was analyzed for different frequencies at room temperature. The mechanical properties have been determined for pure and the doped L-arginine phosphate crystals.

Growth and characterization of Yb:Ho:YAG single crystal fiber

Science.gov (United States)

Yang, Yilun; Ye, Linhua; Bao, Renjie; Li, Shanming; Zhang, Peixiong; Xu, Min; Hang, Yin

2018-06-01

High quality Yb and Ho co-doped Y3Al5O12 single crystal fibers have been successfully grown by the laser heated pedestal growth method of up to 124 mm in length and 450 μm in diameter for the first time. The results of inductively coupled plasma-atomic emission spectrometry analysis, X-ray diffraction and Raman spectroscopy reveal that the lattice structure and doping concentrations of the SCF are the same as that of the bulk. Scanning electron microscopy microphotographs shows that the fibers only have minor diameter fluctuations within 0.5%.

Physical and chemical properties of a Ga-doped ZnO crystal

International Nuclear Information System (INIS)

Stashans, Arvids; Olivos, Katia; Rivera, Richard

2011-01-01

First-principles calculations based on density functional theory and strengthened by Hartree-Fock computations have been performed to study a Ga-doped wurtzite-type ZnO crystal. The large 108-atom supercell used throughout this work allows one to model a single point defect within the periodic supercell model. Thus, the Ga impurity produced purely local effects on the properties of the material. The electronic band structure was obtained for both pure and impurity-doped materials. The occurrence of free electrons in the conduction band was observed after the incorporation of Ga, implying the Ga dopant's contribution to n-type electrical conductivity in the ZnO crystal, in agreement with known experimental data. An analysis of the charges on atoms and obtained atomic displacements in the region surrounding the defect showed that there is some alteration in the chemical bonding because of the presence of Ga atoms. In particular, the ionic bonding is strengthened in the defect's neighbourhood.

Physical and chemical properties of a Ga-doped ZnO crystal

Energy Technology Data Exchange (ETDEWEB)

Stashans, Arvids; Olivos, Katia; Rivera, Richard, E-mail: arvids@utpl.edu.e [Grupo de FisicoquImica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)

2011-06-01

First-principles calculations based on density functional theory and strengthened by Hartree-Fock computations have been performed to study a Ga-doped wurtzite-type ZnO crystal. The large 108-atom supercell used throughout this work allows one to model a single point defect within the periodic supercell model. Thus, the Ga impurity produced purely local effects on the properties of the material. The electronic band structure was obtained for both pure and impurity-doped materials. The occurrence of free electrons in the conduction band was observed after the incorporation of Ga, implying the Ga dopant's contribution to n-type electrical conductivity in the ZnO crystal, in agreement with known experimental data. An analysis of the charges on atoms and obtained atomic displacements in the region surrounding the defect showed that there is some alteration in the chemical bonding because of the presence of Ga atoms. In particular, the ionic bonding is strengthened in the defect's neighbourhood.

Optical properties of pure and Ce3+ doped gadolinium gallium garnet crystals and epitaxial layers

International Nuclear Information System (INIS)

Syvorotka, I.I.; Sugak, D.; Wierzbicka, A.; Wittlin, A.; Przybylińska, H.; Barzowska, J.; Barcz, A.; Berkowski, M.; Domagała, J.; Mahlik, S.; Grinberg, M.; Ma, Chong-Geng

2015-01-01

Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers are reported. In the region of intra-configurational 4f–4f transitions the spectra of the bulk crystals exhibit the signatures of several different Ce 3+ related centers. Apart from the dominant center, associated with Ce substituting gadolinium, at least three other centers are found, some of them attributed to the so-called antisite locations of rare-earth ions in the garnet host, i.e., in the Ga positions. X-ray diffraction data prove lattice expansion of bulk GGG crystals due to the presence of rare-earth antisites. The concentration of the additional Ce-related centers in epitaxial layers is much lower than in the bulk crystals. However, the Ce-doped layers incorporate a large amount of Pb from flux, which is the most probable source of nonradiative quenching of Ce luminescence, not observed in crystals grown by the Czochralski method. - Highlights: • Ce 3+ multicenters found in Gadolinium Gallium Garnet crystals and epitaxial layers. • High quality epitaxial layers of pure and Ce-doped GGG were grown. • Luminescence quenching of Ce 3+ by Pb ions from flux detected in GGG epitaxial layers. • X-ray diffraction allows measuring the amount of the rare-earth antisites in GGG

Growth and laser action of Yb: YVO4 crystals with low Yb doping concentration

Science.gov (United States)

Zhong, Degao; Teng, Bing; Li, Jianhong; Zhang, Shiming; Zhang, Bingtao; Wang, Chao; Tian, Xueping; Liu, Junhai

2012-11-01

Yb: YVO4 single crystals with low doping concentrations of Yb3+ less than 0.3 at% were grown using the Czochralski method. The polarized absorption spectra were measured at room temperature. Strong anisotropy exists in the absorption spectra, resulting in almost entirely different features for π-polarization and σ-polarization. The laser emission spectrum and relationship curve between the output power and absorbed pump power (Pabs) were measured. The continuous-wave laser action of Yb: YVO4 single crystal in a range of 1020.4-1026.3 nm was realized by using a high-power diode laser as the pump source.

Comparative study of transparent ceramic and single crystal Ce doped LuAG scintillators

International Nuclear Information System (INIS)

Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Kamada, Kei; Yanagida, Satoko; Yoshikawa, Akira; Yagi, Hideki; Yanagitani, Takagimi

2011-01-01

Transparent ceramic Ce 0.5% doped Lu 3 Al 5 O 12 (LuAG) scintillator grown by the sintering method and single crystalline Ce doped LuAG grown by the Czochralski method are prepared. They are cut to the physical dimensions 4 × 4 × 2 mm 3 . Their transmittance and radio luminescence spectra are evaluated. They are both transmissive in wavelength longer than 500 nm and intense Ce 3+ 5d–4f emission appears around 520 nm. When 137 Cs γ-ray is irradiated, 662 keV photo-absorption peaks are clearly observed in each sample. The transparent ceramic one shows higher light yield than that of the single crystalline one. The absolute light yield of the ceramic sample is turned out to be 14800 ± 1500 ph/MeV. The decay time constants are evaluated under pulse X-ray excitation. The main component of the decay time of ceramic and single crystalline one are determined as 37 and 46 ns, respectively.

Structural and magnetic properties of single-crystalline Co-doped barium titanate nanoparticles

International Nuclear Information System (INIS)

Liu Hongxue; Cao Baobao; O'Connor, Charles J.

2010-01-01

Undoped and Co-doped BaTiO 3 nanoparticles were synthesized by a one-step sol-precipitation method. For all the samples, X-ray diffraction showed characteristic diffraction lines for BaTiO 3 without the indication of secondary phases. High-resolution transition electron microscopy images showed that BaTiO 3 nanoparticles exhibit the nature of single-crystal. Magnetometry revealed that all the Co-doped BaTiO 3 samples show paramagnetic behaviors and Co ions in BaTiO 3 are present as isolated paramagnetic centers. This is contrasted to several reported cases of ferromagnetism in Co-doped BaTiO 3 .

Growth and scintillation properties of Ce{sup 3+}-doped (Y{sub 1-x}Gd{sub x})AlO{sub 3} crystals

Energy Technology Data Exchange (ETDEWEB)

Fujimoto, Yutaka; Wakahara, Shingo; Suzuki, Shotaro; Kurosawa, Shunsuke [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yoshikawa, Akira [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

2012-12-15

The optical and scintillation properties of 0.5% fixed Ce-doped (Y{sub 1-x}Gd{sub x})AlO{sub 3} single crystals have been investigated at three different levels of Gd doping: x = 0.2, 0.4 and 0.6. Single crystal of the Ce{sup 3+}-doped (Y{sub 0.8}Gd{sub 0.2})AlO{sub 3}, (Y{sub 0.6}Gd{sub 0.4})AlO{sub 3} and (Y{sub 0.4}Gd{sub 0.6})AlO{sub 3} were successfully grown by {mu}-PD technique in nitrogen atmosphere. From X-ray diffraction analysis, no impurity phase was detected for the grown Ce-doped crystals. Ce-doped (Y{sub 0.6}Gd{sub 0.4})AlO{sub 3} crystal demonstrated highest fluorescence quantum efficiency ({proportional_to} 25%) with improvement of excitation efficiency due to the Gd-doping. When irradiated by the alpha-rays from a {sup 241}Am source, all the Ce-doped crystals showed luminescence band that corresponding to 5d (t{sub 2g})-4f transition of Ce{sup 3+}. The scintillation decay time was characterized by two components; the fast component (5-15 ns) is ascribed to 5d-4f transition of Ce{sup 3+}, while the slow one (100-200 ns) may be related to energy transfer between Ce{sup 3+} and Gd{sup 3+} ion. According to the result of {sup 137}Cs gamma-ray irradiated pulse height spectra compared with BGO scintillator, the relative scintillation light output was found to be about 12200 {+-} 1220 (Gd 20%) and 16000 {+-} 1600 (Gd 40%) ph/MeV. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Radiative recombination in doped indium phosphide crystals

International Nuclear Information System (INIS)

Negreskul, V.V.; Russu, E.V.; Radautsan, S.I.; Cheban, A.G.; AN Moldavskoj SSR, Kishinev. Inst. Prikladnoj Fiziki)

1975-01-01

Photoluminiscence spectra of nondoped n-InP and their change upon doping with silicon, cadmium, zinc and copper impurities were studied. The shortest wave band at 1.41 eV is connected with radiative electron transition from a shallow donor level (probably silicon) to valent zone, while the band with maximum at 1.37 - 1.39 eV is due to radiative electron transition to an acceptor level whose energy depends upon the nature and concentration of impurity implanted. The luminescence of Light-doped p-InP crystals enables to estimate the ionization energies of acceptor levels in cadmium (Esub(a)=0.043 eV) and zinc (Esub(a)=0.027 eV). Energies of acceptor levels (0.22 and 0.40 eV) due to copper impurity are determined. Intensity of edge emission in the specimens light-doped with silicon is higher than in the nondoped n-InP crystals

Single-mode regime in large-mode-area rare-earth-doped rod-type PCFs

DEFF Research Database (Denmark)

Poli, F.; Cucinotta, A.; Passaro, D.

2009-01-01

In this paper, large-mode-area, double-cladding, rare-earth-doped photonic crystal fibers are investigated in order to understand how the refractive index distribution and the mode competition given by the amplification can assure single-mode propagation. Fibers with different core diameters, i...

Growth and characterization of La2CoMnO6 crystals doped with Pb

International Nuclear Information System (INIS)

Milenov, T.I.; Rafailov, P.M.; Abrashev, M.V.; Nikolova, R.P.; Nakatsuka, A.; Avdeev, G.V.; Veleva, M.N.; Dobreva, S.; Yankova, L.; Gospodinov, M.M.

2010-01-01

Crystals of La 2 CoMnO 6 doped with Pb were grown by the high temperature solution growth method. Several crystals were examined by scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDAX), X-ray single-crystal diffractometry and polarized Raman spectroscopy. Some variations in the composition of different crystals are observed, however, within the volume of each distinct crystal the composition is found to be fairly constant. Crystals with lateral dimensions larger than 2 mm and thicker than 1 mm contain structural defects as twin lamellae and surface roughness. The results from the characterization of the grown crystals with X-ray diffraction and Raman spectroscopy are consistent with an assumption for a coexistence of an ordered monoclinic and a disordered orthorhombic phase.

Optical spectroscopy of Nd3+/Mg2+ co-doped LiTaO3 laser crystal

International Nuclear Information System (INIS)

Zhang, P X; Hang, Y; Gong, J; Zhao, C C; Yin, J G; Zhang, L H; Zhu, Y Y

2013-01-01

A Nd 3+ and Mg 2+ co-doped LiTaO 3 single crystal has been grown successfully by the Czochralski method. The polarized absorption spectra of the crystal were measured and investigated. The peak absorption cross-sections at 806 and 810 nm were 4.17 × 10 −20 cm 2 and 4.47 × 10 −20 cm 2 with a full width at half maximum of 29 and 17 nm for σ- and π-polarization, respectively. Based on the Judd–Ofelt theory, the spectral parameters of Nd 3+ in the as-grown crystal were investigated in detail. Moreover, the emission probabilities, branching ratio and radiative lifetime for the transitions from 4 F 3/2 were calculated. The radiative lifetime of 4 F 3/2 was calculated to be 159 μs and the luminescent quantum efficiency of the 4 F 3/2 manifold was about 81.13%. The results were also compared with other Nd 3+ doped crystals. (paper)

1.8 μm luminescent properties and energy transfer of Yb{sup 3+}/Tm{sup 3+} co-doped α-NaYF{sub 4} single crystals

Energy Technology Data Exchange (ETDEWEB)

Feng, Zhigang [Key Laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang, 315211 (China); Xia, Haiping, E-mail: hpxcm@nbu.edu.cn [Key Laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang, 315211 (China); Wang, Cheng; Zhang, Zhixiong; Jiang, Dongsheng; Zhang, Jian; He, Shinan; Tang, Qingyang; Sheng, Qiguo; Gu, Xuemei; Zhang, Yuepin [Key Laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang, 315211 (China); Chen, Baojiu [Department of Physics, Dalian Maritime University, Dalian, Liaoning Province, 116026 (China); Jiang, Haochuan, E-mail: jianghaochuan@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, The Chinese Academy of Sciences, Ningbo, Zhejiang, 315211 (China)

2016-09-25

This paper reports on successful preparation of α-NaYF{sub 4} single crystals co-doped with ∼1.9 mol% Tm{sup 3+} and various concentrations (3.85 mol%, 7.69 mol%, 11.54 mol%, 15.38 mol%) of Yb{sup 3+} by using a flux-Bridgman method. The fluorescence decay curve was measured to investigate the luminescent properties of the Yb{sup 3+}/Tm{sup 3+} co-doped α-NaYF{sub 4}, and the energy transfer process from Yb{sup 3+} to Tm{sup 3+}; the J-O intensity parameters of Tm{sup 3+} were further calculated and analyzed according to the absorption spectra. Results show that, an intense 1.8 μm emission was achieved with Yb{sup 3+} as sensitizer for Tm{sup 3+} in the α-NaYF{sub 4} single crystal under the excitation of 980 nm LD (Laser Diode) because of the strong energy transfer from Yb{sup 3+} to Tm{sup 3+}. The maximum emission intensity at 1.8 μm is obtained at about 15.38 mol% doping concentration of Yb{sup 3+} when the concentration of Tm{sup 3+} ions is fixed at ∼1.90 mol% in the current research. Moreover, the calculated maximum value of emission cross section at 1.8 μm is 1.63 × 10{sup −20} cm{sup 2} for 3.85 mol% Yb{sup 3+}/1.9 mol% Tm{sup 3+} sample, and the obtained energy transfer rate (W{sub ET}) and energy transfer efficiency (η) are 1543 s{sup −1} and 83.8%, respectively. Our analysis of the fluorescence dynamics indicates that electric dipole-dipole interaction is dominant for the energy transfer from Yb{sup 3+} ions to Tm{sup 3+} ions by using Inokuti-Hirayama’s model. - Highlights: • The Tm{sup 3+}/Yb{sup 3+} co-doped α-NaYF{sub 4} single crystals were grown by Bridgman method. • The 1.8 μm emission intensity is obtained at 15.38 mol% Yb{sup 3+}/1.90 mol% Tm{sup 3+} sample. • The maximum value of emission cross section at 1.8 μm is 1.63 × 10{sup −20} cm{sup 2}. • The energy transfer rate is 1543 s{sup −1} and energy transfer efficiency is 83.8%. • The physical mechanism for energy transfer from Yb{sup 3+} to Tm{sup 3+} ions

PHOTOCATALYTIC ACTIVITIES of Ag+ DOPED ZIF-8 and ZIF-L CRYSTALS

Directory of Open Access Journals (Sweden)

Berna Topuz

2016-09-01

Full Text Available Photocatalysis is expected to contribute to the solution of environmental problems such as water and air pollution in the near future. The design of photocatalysts with high electron-hole generation rates, high surface areas and high light absorption capacities is crucial in producing sustainable and cost-effective photocatalytic processes. Titania, zirconia, copper oxide, zinc oxide, iron oxide are widely used photocatalysts which have good light absorption capacities with moderate surface areas depending on the synthesis conditions. In the last decade metal organic frameworks (MOFs have been used in photocatalytic applications due to their very high surface areas up to 1000s of m2/g and adequate light absorption capacities. In this study zeolitic imidazolate framework (ZIF based MOF photocatalytsts were prepared and the effect of silver (Ag doping on the photocatalytic activity of ZIF-8 and ZIF-L crystals was investigated. Ag doped ZIF-8 and ZIF-L crystals were prepared and their activities in the photocatalytic removal of methylene blue (MB dye under UV irradiation were determined for the first time in the literature. Doped ZIF-8 and ZIF-L crystals showed better photocatalytic activities compared to the undoped crystals. 100% of MB was removed with 5 mole% Ag+ doped ZIF-8 in 40 min. The photocatalytic activity decreased beyond 5% doping level since Ag+ ions may have segregated due to a possible solid state solubility limit of Ag+ ions in the crystal lattice of ZIF-8. ZIF-L crystals possessed lower photocatalytic activities compared to ZIF-8 crystals.

Spectroscopic and crystallographic studies of YAG:Pr4+ single crystals

International Nuclear Information System (INIS)

Pawlak, D.; Frukacz, Z.; Mierczyk, Z.; Suchocki, A.; Zachara, J.

1998-01-01

Y 3 Al 5 O 12 single crystals doped with praseodymium and magnesium ions have been prepared. The reversible color change of this crystal is observed when annealing in oxidizing or reducing atmospheres. The change is ascribed to the formation of Pr 4+ in the as-grown crystal, caused by the second dopant, Mg 2+ . The absorption spectra of YAG:Pr,Mg in the range 200-1100 nm, as grown and annealed in air and H 2 /N 2 atmosphere, are presented and discussed. Additional broad absorption bands are observed for the as-grown crystals and those annealed in oxidizing atmosphere. Crystallographic investigations of the original crystal and after annealing in a reducing atmosphere as described above, show no distinct structural differences. A redox mechanism is proposed to explain the color change during annealing. (orig.)

Crystal and electronic structure study of Mn doped wurtzite ZnO nanoparticles

Directory of Open Access Journals (Sweden)

O.M. Ozkendir

2016-08-01

Full Text Available The change in the crystal and electronic structure properties of wurtzite ZnO nanoparticles was studied according to Mn doping in the powder samples. The investigations were conducted by X-ray Absorption Fine Structure Spectroscopy (XAFS technique for the samples prepared with different heating and doping processes. Electronic analysis was carried out by the collected data from the X-ray Absorption Near-Edge Structure Spectroscopy (XANES measurements. Additional crystal structure properties were studied by Extended-XAFS (EXAFS analysis. Longer heating periods for the undoped wurtzite ZnO samples were determined to own stable crystal geometries. However, for some doped samples, the distortions in the crystal were observed as a result of the low doping amounts of Mn which was treated as an impurity. Besides, the changes in oxygen locations were determined to create defects and distortions in the samples.

Growth and characterization of high-purity SiC single crystals

Science.gov (United States)

Augustine, G.; Balakrishna, V.; Brandt, C. D.

2000-04-01

High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.

Tunable photonic crystals with partial bandgaps from blue phase colloidal crystals and dielectric-doped blue phases.

Science.gov (United States)

Stimulak, Mitja; Ravnik, Miha

2014-09-07

Blue phase colloidal crystals and dielectric nanoparticle/polymer doped blue phases are demonstrated to combine multiple components with different symmetries in one photonic material, creating a photonic crystal with variable and micro-controllable photonic band structure. In this composite photonic material, one contribution to the band structure is determined by the 3D periodic birefringent orientational profile of the blue phases, whereas the second contribution emerges from the regular array of the colloidal particles or from the dielectric/nanoparticle-doped defect network. Using the planewave expansion method, optical photonic bands of the blue phase I and II colloidal crystals and related nanoparticle/polymer doped blue phases are calculated, and then compared to blue phases with no particles and to face-centred-cubic and body-centred-cubic colloidal crystals in isotropic background. We find opening of local band gaps at particular points of Brillouin zone for blue phase colloidal crystals, where there were none in blue phases without particles or dopants. Particle size and filling fraction of the blue phase defect network are demonstrated as parameters that can directly tune the optical bands and local band gaps. In the blue phase I colloidal crystal with an additionally doped defect network, interestingly, we find an indirect total band gap (with the exception of one point) at the entire edge of SC irreducible zone. Finally, this work demonstrates the role of combining multiple - by symmetry - differently organised components in one photonic crystal material, which offers a novel approach towards tunable soft matter photonic materials.

A multistep single-crystal-to-single-crystal bromodiacetylene dimerization

Science.gov (United States)

Hoheisel, Tobias N.; Schrettl, Stephen; Marty, Roman; Todorova, Tanya K.; Corminboeuf, Clémence; Sienkiewicz, Andrzej; Scopelliti, Rosario; Schweizer, W. Bernd; Frauenrath, Holger

2013-04-01

Packing constraints and precise placement of functional groups are the reason that organic molecules in the crystalline state often display unusual physical or chemical properties not observed in solution. Here we report a single-crystal-to-single-crystal dimerization of a bromodiacetylene that involves unusually large atom displacements as well as the cleavage and formation of several bonds. Density functional theory computations support a mechanism in which the dimerization is initiated by a [2 + 1] photocycloaddition favoured by the nature of carbon-carbon short contacts in the crystal structure. The reaction proceeded up to the theoretical degree of conversion without loss of crystallinity, and it was also performed on a preparative scale with good yield. Moreover, it represents the first synthetic pathway to (E)-1,2-dibromo-1,2-diethynylethenes, which could serve as synthetic intermediates for the preparation of molecular carbon scaffolds. Our findings both extend the scope of single-crystal-to-single-crystal reactions and highlight their potential as a synthetic tool for complex transformations.

Solid-state reaction kinetics and optical studies of cadmium doped magnesium hydrogen phosphate crystals

Science.gov (United States)

Verma, Madhu; Gupta, Rashmi; Singh, Harjinder; Bamzai, K. K.

2018-04-01

The growth of cadmium doped magnesium hydrogen phosphate was successfully carried out by using room temperature solution technique i.e., gel encapsulation technique. Grown crystals were confirmed by single crystal X-ray diffraction (XRD). The structure of the grown crystal belongs to orthorhombic crystal system and crystallizes in centrosymmetric space group. Kinetics of the decomposition of the grown crystals were studied by non-isothermal analysis. Thermo gravimetric / differential thermo analytical (TG/DTA) studies revealed that the grown crystal is stable upto 119 °C. The various steps involved in the thermal decomposition of the material have been analysed using Horowitz-Metzger, Coats-Redfern and Piloyan-Novikova equations for evaluating various kinetic parameters. The optical studies shows that the grown crystals possess wide transmittance in the visible region and significant optical band gap of 5.5ev with cut off wavelength of 260 nm.

Effect of the electronic structure of the etched CdTe single crystals on the exciton radiation processes

International Nuclear Information System (INIS)

Tkachuk, P.M.; Tkachuk, V.Yi.; Mel'nichuk, S.V.; Kurik, M.V.

2005-01-01

Under optical excitation the structure of the radiation beyond fundamental absorption of the orientated CdTe single crystals caused by LO-phonon scattering processes of the electron-hole states is observed. Crystals have been doped with impurity of Cl as a result of the surface preparing by etching in Br-methanol. Electronic structure of the single crystals surface layer is identified on the basis of two-phonon radiation absorption investigation. Taking into account the modes selection rules the one and two phonon scattering mechanisms for two crystals surface orientations are determined

Optical properties and radiation response of Ce3+-doped GdScO3 crystals

International Nuclear Information System (INIS)

Yamaji, Akihiro; Fujimoto, Yutaka; Futami, Yoshisuke; Yokota, Yuui; Kurosawa, Shunsuke; Kochurikhin, Vladimir; Yanagida, Takayuki; Yoshikawa, Akira

2012-01-01

10%-Ce doped GdScO 3 perovskite type single crystal was grown by the Czochralski process. The Ce concentration in the crystal was measured. No impurity phases were observed by powder X-ray diffraction analysis. We evaluated the optical and radiation properties of the grown crystal. Ce:GdScO 3 crystal showed photo- and radio-luminescence peaks due to Ce 3+ of 5d-4f transition and colour centre. The photoluminescence decay time was sub-ns order. The relative light yield under 5.5 MeV alpha-ray excitation was calculated to be approximately 9% of BGO. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Study of structural and optical properties of YAG and Nd:YAG single crystals

Energy Technology Data Exchange (ETDEWEB)

Kostić, S. [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Lazarević, Z.Ž., E-mail: lzorica@yahoo.com [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Radojević, V. [Faculty of Technology and Metallurgy, University of Belgrade, Belgrade (Serbia); Milutinović, A.; Romčević, M.; Romčević, N.Ž. [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Valčić, A. [Faculty of Technology and Metallurgy, University of Belgrade, Belgrade (Serbia)

2015-03-15

Highlights: • Transparent YAG and pale pink Nd:YAG single crystals were produced by the Czochralski technique. • Growth mechanisms and shape of the liquid/solid interface and incorporation of Nd{sup 3+} were studied. • The structure of the crystals was investigated by X-ray diffraction, Raman and IR spectroscopy. • The 15 Raman and 17 IR modes were observed. • The obtained YAG and Nd:YAG single crystals were without core and of good optical quality. - Abstract: Yttrium aluminum garnet (YAG, Y{sub 3}Al{sub 5}O{sub 12}) and yttrium aluminum garnet doped with neodymium (Nd:YAG) single crystals were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. As a result of our experiments, the transparent YAG and pale pink Nd:YAG single crystals were produced. The obtained crystals were studied by X-ray diffraction, Raman and IR spectroscopy. The crystal structure was confirmed by XRD. The 15 Raman and 17 IR modes were observed. The Raman and IR spectroscopy results are in accordance with X-ray diffraction analysis. The obtained YAG and Nd:YAG single crystals were without core and of good optical quality. The absence of a core was confirmed by viewing polished crystal slices. Also, it is important to emphasize that the obtained Nd:YAG single crystal has a concentration of 0.8 wt.% Nd{sup 3+} that is characteristic for laser materials.

Effect of L-aspartic acid on the growth, structure and spectral studies of Zinc (tris) Thiourea Sulphate (ZTS) single crystals

Science.gov (United States)

Samuel, Bincy Susan; Krishnamurthy, R.; Rajasekaran, R.

2014-11-01

Single crystals of pure and L-aspartic acid doped Zinc (Tris) Thiourea Sulphate (ZTS) were grown from aqueous solution by solution growth method. The cell parameters and structure of the grown crystals were determined by X-ray diffraction studies. The presence of functional group in the compound has been confirmed by FTIR and FT-Raman analysis. The optical transparency range has been studied through UV-Vis spectroscopy. TGA/DTA studies show thermal stability of the grown crystals. Microhardness study reveals that the hardness number (Hv) increases with load for pure and doped ZTS crystals. Dielectric studies have been carried out and the results are discussed. The second harmonic generation was confirmed for L-aspartic acid doped ZTS which is greater than pure ZTS.

Photorefractive effect at 775 nm in doped lithium niobate crystals

Energy Technology Data Exchange (ETDEWEB)

Nava, G.; Minzioni, P.; Cristiani, I.; Degiorgio, V. [Department of Electrical, Computer, and Biomedical Engineering, and CNISM, University of Pavia, 27100 Pavia (Italy); Argiolas, N.; Bazzan, M.; Ciampolillo, M. V.; Pozza, G.; Sada, C. [Physics and Astronomy Departement, University of Padova, 35131 Padova (Italy)

2013-07-15

The photorefractive effect induced by 775-nm laser light on doped lithium niobate crystals is investigated by the direct observation in the far field of the transmitted-beam distortion as a function of time. Measurements performed at various Zr-doping concentrations and different light intensities show that the 775-nm light beam induces a steady-state photorefractive effect comparable to that of 532-nm light, but the observed build-up time of the photovoltaic field is longer by three-orders of magnitude. The 775-nm photorefractivity of lithium niobate crystals doped with 3 mol. % ZrO{sub 2} or with 5.5 mol. % MgO is found to be negligible.

Growth and characterization of KDP crystals doped with L-aspartic acid.

Science.gov (United States)

Krishnamurthy, R; Rajasekaran, R; Samuel, Bincy Susan

2013-03-01

Potassium Dihydrogen Phosphate (KDP) doped with L-aspartic acid has been grown by solvent slow evaporation technique from a mixture of aqueous solution of KDP and 0.7% of L-aspartic acid at room temperature. The grown crystals were characterized by powder X-ray diffraction, UV-visible, FTIR analysis. The doping of aspartic acid was confirmed by FTIR spectrum. The Nonlinear optical property (SHG) of L-aspartic acid doped KDP has been confirmed. Microhardness studies were carried out on the grown crystal. Copyright © 2012 Elsevier B.V. All rights reserved.

Crystal growth and scintillation properties of Pr-doped oxyorthosilicate for different concentration

Energy Technology Data Exchange (ETDEWEB)

Totsuka, Daisuke, E-mail: totsuka@mail.tagen.tohoku.ac.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co. Ltd (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Fujimoto, Yutaka [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Pejchal, Jan [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Institute of Physics AS CR, Cukrovarnicka 10, Prague 6, 162-53 (Czech Republic); Yokota, Yuui [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

2011-07-01

0.05, 0.1 and 0.25 mol% Pr (with respect to Lu) doped Lu{sub 2}SiO{sub 5} (LSO) single crystals were grown by the micro-pulling down ({mu}-PD) method. The grown crystals were transparent, and a slight segregation of Pr{sup 3+} was observed both in the crystal cross-section and growth direction. Transparency in the visible wavelength range was about 80% in all the crystals. Intense absorptions related with the Pr{sup 3+} 4f-5d transitions were observed around 230 and 255 nm, and weak absorptions due to the 4f-4f transitions were detected around 450 nm. In radioluminescence spectra, the Pr{sup 3+} 5d-4f transitions were observed around 275and 310 nm, and emissions due to the 4f-4f transition were observed around 500 nm. In the pulse height analysis using {sup 137}Cs gamma-ray excitation, Pr 0.1% doped sample showed the highest light yield of 2,800 ph/MeV. In the decay time measurements using different excitation sources (photoluminescence, X- and gamma-ray), two different processes related to the 5d-4f emission peaks were found. Fast decay component corresponds to direct excitation of Pr{sup 3+} (4-6 ns) and slower component (25 ns) reflects the energy migration process from the host lattice to the emission center.

Luminescence and scintillation properties of YAG:Ce single crystal and optical ceramics

CERN Document Server

Mihóková, E; Mareš, J A; Beitlerová, A; Vedda, A; Nejezchleb, K; Blažek, K; D’Ambrosio, C

2007-01-01

We use various techniques to study optical and scintillation properties of Ce-doped yttrium aluminum garnet, Y3Al5O12 (YAG:Ce), in the form of a high-quality industrial single crystal. This was compared to optical ceramics prepared from YAG:Ce nanopowders. We present experimental data in the areas of optical absorption, radioluminescence, scintillation decay, photoelectron yield, thermally stimulated luminescence and radiation-induced absorption. The results point to an interesting feature—the absence of antisite (YAl, i.e. Y at the Al site) defects in optical ceramics. The scintillation decay of the ceramics is faster than that of the single crystal, but its photoelectron yield (measured with 1 μs integration time) is about 30–40% lower. Apart from the photoelectron yield value the YAG:Ce optical ceramic is fully comparable to a high quality industrial YAG:Ce single crystal and can become a competitive scintillator material.

Conversion of broadband IR radiation and structural disorder in lithium niobate single crystals with low photorefractive effect

Science.gov (United States)

Litvinova, Man Nen; Syuy, Alexander V.; Krishtop, Victor V.; Pogodina, Veronika A.; Ponomarchuk, Yulia V.; Sidorov, Nikolay V.; Gabain, Aleksei A.; Palatnikov, Mikhail N.; Litvinov, Vladimir A.

2016-11-01

The conversion of broadband IR radiation when the noncritical phase matching condition is fulfilled in lithium niobate (LiNbO3) single crystals with stoichiometric (R = Li/Nb = 1) and congruent (R = 0.946) compositions, as well as in congruent single crystals doped with zinc has been investigated. It is shown that the spectrum parameters of converted radiation, such as the conversion efficiency, spectral width and position of maximum, depend on the ordering degree of structural units of the cation sublattice along the polar axis of crystal.

Crystal growth, spectroscopic characterization, and continuous wave laser operation of Nd3+-doped LiLuF4 crystal

Science.gov (United States)

Zhao, C. C.; Hang, Y.; Zhang, L. H.; He, X. M.; Yin, J. G.; Li, R.; Yu, T.; Chen, W. B.

2011-04-01

Nd3+-doped LiLuF4 single crystal with high optical quality was grown by Czochralski technique. The segregation coefficient of Nd3+ in LiLuF4 crystal was determined by the inductively coupled plasma atomic emission spectrometry method. Polarized absorption and fluorescence spectra were investigated. The peak absorption cross section at 792 nm and peak emission cross section at 1053 nm are 6.94×10-20 and 7.60×10-20 cm2, respectively. With a laser-diode as the pump source, a maximum 6.22 W continuous-wave laser output at 1053 nm has been obtained with a slope efficiency of 37.2% with respect to the pump power.

Implanted strontium titanate single crystals for energy storage applications

Energy Technology Data Exchange (ETDEWEB)

Stoeber, Max; Cherkouk, Charaf; Walter, Juliane; Strohmeyer, Ralph; Leisegang, Tilmann; Meyer, Dirk Carl [TU Bergakademie, Freiberg (Germany); Schelter, Matthias; Zosel, Jens [Kurt Schwabe Institute, Meinsberg (Germany); Prucnal, Slawomir [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (Germany)

2016-07-01

A rapid increase of the demand on efficient energy storage solutions requires new approaches beyond the Li-ion technology. In particular, metal-air batteries as well as solid-state fuel cells offer a great potential for high-energy-density storage devices. Since the efficiency of such devices is significantly limited by the activation of both the oxygen reduction reaction (ORR) and the ionic and electronic conductivities, an adequate porosity as well as a controlled doping are required. The ion implantation is a key technology to achieve this goal. In this work, p- and n-doped strontium titanate (SrTiO{sub 3}) single crystals were used as oxidic materials. The oxygen exchange kinetics as well as the structural changes of the SrTiO{sub 3} crystal surface induced by the ion implantation were investigated. On one hand, the depth profile of dopant concentration and dopant valence state were determined using sputtered X-ray photoelectron spectroscopy (XPS). On the other hand, the overall oxygen exchange kinetic of the implanted SrTiO{sub 3} crystal was quantitatively described by means of coulometric titration using Zirox system (ZIROX GmbH, Germany). Furthermore, the surface morphology of the samples was investigated using atomic force microscopy (AFM).

Paramagnetic resonance of LaGaO3: Mn single crystals grown by floating zone melting

Science.gov (United States)

Vazhenin, V. A.; Potapov, A. P.; Artyomov, M. Yu.; Salosin, M. A.; Fokin, A. V.; Gil'mutdinov, I. F.; Mukhamedshin, I. R.

2016-02-01

The EPR spectrum of Mn-doped lanthanum gallate single crystals grown by floating zone melting with optical heating has been studied. In contrast to the crystals grown according to the Czochralski method, no manganese is found in these crystals even after high-temperature annealing in air. The spectral characteristics of Fe3+ and Gd3+ centers in crystals prepared by various methods have been compared in the rhombohedral phase, and the fourth-rank nondiagonal parameters of the Fe3+ trigonal centers have been determined, as well.

Study of the growth and pyroelectric properties of TGS crystals doped with aniline-family dipolar molecules

Science.gov (United States)

Zhang, Kecong; Song, Jiancheng; Wang, Min; Fang, Changshui; Lu, Mengkai

1987-04-01

TGS crystals doped with aniline-family dipolar molecules (aniline, 2-aminobenzoic acid, 3-aminobenzoic acid, 3-aminobenzene-sulphonic acid, 4-aminobenzenesulphonic acid and 4-nitroraniline) have been grown by the slow-cooling solution method. The influence of these dopants on the growth habits, crystal morphology pyroelectric properties, and structure parameters of TGS crystals has been systematically investigated. The effects of the domain structure of the seed crystal on the pyroelectric properties of the doped crystals have been studied. It is found that the spontaneous polarization (P), pyroelectric coefficient (lambda), and internal bias field of the doped crystals are slightly higher than those of the pure TGS, and the larger the dipole moment of the dopant molecule, the higher the P and lambda of the doped TGS crystal.

Habit modification of potassium acid phthalate (KAP) single crystals by impurities

Science.gov (United States)

Murugakoothan, P.; Mohan Kumar, R.; Ushasree, P. M.; Jayavel, R.; Dhanasekaran, R.; Ramasamy, P.

1999-12-01

Nonlinear optical materials potassium dihydrogen phosphate (KDP), urea and L-arginine phosphate (LAP)-doped KAP crystals were grown by the slow cooling method. The LAP-doped crystals show pronounced habit modification compared to KDP and urea doping. The effect of these impurities on growth kinetics, surface morphology, habit modification, structure, optical and mechanical properties have been studied. Among the three impurities, urea doping yields high mechanical stability and optical transmission and for KDP and LAP doping there is a decrease in optical transmission.

V color centers in electrolytically colored hydroxyl-doped sodium chloride crystals

International Nuclear Information System (INIS)

Gu Hongen; Song Cuiying; Han Li

2006-01-01

Hydroxyl-doped sodium chloride crystals were successfully colored electrolytically by using pointed anode and flat cathode at various temperatures and under various electric field strengths. V 2 and V 3 color centers were produced in the colored crystals. Current-time curves for the electrolytic colorations were given, and activation energy for the V 2 and V 3 color center migration was determined. Production of the V 2 and V 3 color centers and formation of current zones for the electrolytic colorations of the hydroxyl-doped sodium chloride crystals are explained

Defect formation and magnetic properties of Co-doped GaN crystal and nanowire

International Nuclear Information System (INIS)

Shi, Li-Bin; Liu, Jing-Jing; Fei, Ying

2013-01-01

Theoretical calculation based on density functional theory (DFT) and generalized gradient approximation (GGA) has been carried out in studying defect formation and magnetic properties of Co doped GaN crystal and nanowire (NW). Co does not exhibit site preference in GaN crystal. However, Co occupies preferably surface sites in GaN NW. Transition level of the defect is also investigated in GaN crystal. We also find that Co Ga (S) in NW does not produce spin polarization and Co Ga (B) produces spontaneous spin polarization. Ferromagnetic (FM) and antiferromagnetic (AFM) couplings are analyzed by six different configurations. The results show that AFM coupling is more stable than FM coupling for Co doped GaN crystal. It is also found from Co doped GaN NW calculation that the system remains FM stability for majority of the configurations. Magnetic properties in Co doped GaN crystal can be mediated by N and Ga vacancies. The FM and AFM stability can be explained by Co 3d energy level coupling

Chemical composition of cadmium selenochromite crystals doped with indium, silver and gallium

International Nuclear Information System (INIS)

Bel'skij, N.K.; Ochertyanova, L.I.; Shabunina, G.G.; Aminov, T.G.

1985-01-01

The high accuracy chemical analysis Which allows one to observe doping effect on the cadmium selenochromite crystal composition is performed. The problem on the possibility of impurity atom substitution for basic element is considered on the basis of data of atomic-absorption analysis of doped crystals. The crystals of cadmium selenochromite doped with indium by chromium to cadmium ratio are distributed into two groups and probably two types of substitution take place. At 0.08-1.5 at.% indium concentrations the Cr/Cd ratio >2. One can assume that indium preferably takes cadmium tetrahedral positions whereas at 1.5-2.5 at. % concentrations the Cr/Cd ratio =2 and cadmium is substituted for silver which does not contradict crystallochemical and physical properties of this compound. In crystals with gallium the Cr/Cd ratio <2. Gallium preferably substitutes chromium

Growth and spectroscopic properties of Yb{sup 3+}-doped Li{sub 6}Y(BO{sub 3}){sub 3} single crystal

Energy Technology Data Exchange (ETDEWEB)

Brenier, A. [Laboratoire de Physico-Chimie des Materiaux Luminescents, UMR CNRS no 5620, Universite Claude Bernard-Lyon1, 10 rue Ampere, 69622 Villeurbanne (France)]. E-mail: brenier@pcml.univ-lyon1.fr; Yoshikawa, A. [Institute of Multidisciplinary for Advanced Materials, Tohoku University, Sendai 980 8577 (Japan); Lebbou, K. [Laboratoire de Physico-Chimie des Materiaux Luminescents, UMR CNRS no 5620, Universite Claude Bernard-Lyon1, 10 rue Ampere, 69622 Villeurbanne (France); Jouini, A. [Laboratoire de Physico-Chimie des Materiaux Luminescents, UMR CNRS no 5620, Universite Claude Bernard-Lyon1, 10 rue Ampere, 69622 Villeurbanne (France); Institute of Multidisciplinary for Advanced Materials, Tohoku University, Sendai 980 8577 (Japan); Aloui-Lebbou, O. [Laboratoire de Physico-Chimie des Materiaux Luminescents, UMR CNRS no 5620, Universite Claude Bernard-Lyon1, 10 rue Ampere, 69622 Villeurbanne (France); Boulon, G. [Laboratoire de Physico-Chimie des Materiaux Luminescents, UMR CNRS no 5620, Universite Claude Bernard-Lyon1, 10 rue Ampere, 69622 Villeurbanne (France); Institute of Multidisciplinary for Advanced Materials, Tohoku University, Sendai 980 8577 (Japan); Fukuda, T. [Institute of Multidisciplinary for Advanced Materials, Tohoku University, Sendai 980 8577 (Japan)

2007-10-15

The spectroscopic properties of high-quality Czochralski grown 20% Yb{sup 3+}-doped Li{sub 6}Y(BO{sub 3}){sub 3} single crystal as new promising laser material are presented. The crystal was seeded-grown in the <0 1 0> direction and its crystallinity was measured using X-ray rocking curve analysis. Low temperature transmission spectrum exhibits broad bands in a short range of wavelengths and two sharp lines at 972.5 and 978 nm, interpreted as two zero-lines of two nonequivalent Yb{sup 3+} centers inside the lattice. The fluorescence lifetimes associated to these two intense lines are different: 0.867 and 1.33 ms. An attempt of determination of the Stark sublevels energies of the {sup 4}F{sub 5/2} and {sup 4}F{sub 7/2} manifolds of the two Yb{sup 3+} nonequivalent ions is given. The polarized absorption and emission spectra were also recorded at room temperature and we conclude that the most favorable emission line for laser application could be around 1042 nm in n {sub g} polarization.

Spectroscopic and neutron detection properties of rare earth and titanium doped LiAlO 2 single crystals

Energy Technology Data Exchange (ETDEWEB)

Dickens, Peter T.; Marcial, José; McCloy, John; McDonald, Benjamin S.; Lynn, Kelvin G.

2017-10-01

In this study, LiAlO2 crystals doped with rare-earth elements and Ti were produced by the CZ method and spectroscopic and neutron detection properties were investigated. Photoluminescence revealed no clear luminescent activation of LiAlO2 by the rare-earth dopants though some interesting luminescence was observed from secondary phases within the crystal. Gamma-ray pulse height spectra collected using a 137Cs source exhibited only a Compton edge for the crystals. Neutron modeling using Monte Carlo N-Particle Transport Code revealed most neutrons used in the detection setup are thermalized, and while using natural lithium in the crystal growth, which contains 7.6 % 6Li, a 10 mm Ø by 10 mm sample of LiAlO2 has a 70.7 % intrinsic thermal neutron capture efficiency. Furthermore, the pulse height spectra collected using a 241Am-Be neutron source demonstrated a distinct neutron peak.

Fast neutron irradiation and thermal properties of doped nonstoichiometric lithium potassium sulphate crystals

International Nuclear Information System (INIS)

Kassem, M.E.; Gomaa, N.G.; El-Khatib, A.M.

1990-01-01

The influence of point defects introduced by fast neutron irradiations with neutron fluences up to 1.08 x 10 10 n/cm 2 on the thermal properties of pure and doped Li 1.4 K 0.6 SO 4 single crystals are studied in the vicinity of high temperature phase transition at 705 K. The temperature dependence of specific heat is found to be shifted towards lower temperature with the increase of neutron fluence, and can be affected by the presence of Cu 2+ dopant. The change in the value of the specific heat can be attributed to the presence of internal strain generated inside the crystal. (author)

Growth and optical properties of Tm:GdVO4 single crystal

International Nuclear Information System (INIS)

Urata, Y.; Akagawa, K.; Wada, S.; Tashiro, H.; Fukuda, T.

1999-01-01

Thulium-doped gadolinium vanadate (Tm:GdVO 4 ) single crystal has been successfully grown by a modified Czochralski (CZ) technique. Effective distribution coefficient of Tm was determined to be 0.74. Absorption characterization was performed in the 800 nm region and the maximum absorption peak was found at 799 nm for π polarization. Fluorescence spectra for tuning at the maximum absorption were obtained around 1.8-2.0 μm region with 100 nm bandwidth. This suggests that a Tm:GdVO 4 crystal is expected as a new promising LD pumped solid-state laser in the 2 μm region. (orig.)

Design and characterization of Ga-doped indium tin oxide films for pixel electrode in liquid crystal display

International Nuclear Information System (INIS)

Choi, J.H.; Kang, S.H.; Oh, H.S.; Yu, T.H.; Sohn, I.S.

2013-01-01

Indium tin oxide (ITO) thin films doped with various metal atoms were investigated in terms of phase transition behavior and electro-optical properties for the purpose of upgrading ITO and indium zinc oxide (IZO) films, commonly used for pixel electrodes in flat panel displays. We explored Ce, Mg, Zn, and Ga atoms as dopants to ITO by the co-sputtering technique, and Ga-doped ITO films (In:Sn:Ga = 87.4:6.7:5.9 at.%) showed the phase transition behavior at 210 °C within 20 min with high visible transmittance of 91% and low resistivity of 0.22 mΩ cm. The film also showed etching rate similar to amorphous ITO, and no etching residue on glass surfaces. These results were confirmed with the film formed from a single Ga-doped ITO target with slightly different compositions (In:Sn:Ga = 87:9:4 at.%). Compared to the ITO target, Ga-doped ITO target left 1/4 less nodules on the target surface after sputtering. These results suggest that Ga-doped ITO films could be an excellent alternative to ITO and IZO for pixel electrodes in thin film transistor liquid crystal display (TFT-LCD). - Highlights: ► We report Ga-doped In–Sn–O films for a pixel electrode in liquid crystal display. ► Ga-doped In–Sn–O films show phase transition behavior at 210 °C. ► Ga-doped In–Sn–O films show high wet etchability and low resistivity

Growth of doped and pure monocrystalline fibers and gradient crystals of REMO_4 compounds (RE = rare earths and M = Nb and Ta)

International Nuclear Information System (INIS)

Octaviano, E.S.; Levada, C.L.; Missiato, O.; Semenzato, M.J.; Silva, R.A.; Andreeta, J.P.

2009-01-01

A desirable alternative for a faster development, characterization and application of material of technological interest has been the growth of single crystal fibers by LHPG - Laser Heated Pedestal Growth. In this work it was reported the growth of pure, doped and gradient single crystal fibers of the chemical formulation REMO_4 (M = Nb e Ta, e RE= Rare Earth), characterized through primary techniques such as X-Ray and optical spectroscopy. (author)

High proton polarization at high temperature with single crystals of aromatic molecules

International Nuclear Information System (INIS)

Iinuma, M.; Takahashi, Y.; Shake, I.; Oda, M.; Masaike, A.; Yabuzaki, T.; Shimizu, H.M.

2004-01-01

Protons in single crystals of naphthalene doped with pentacene and p-terphenyl doped with pentacene have been polarized up to 32% and 18%, respectively. Such polarization has been achieved at liquid nitrogen temperature in a magnetic field of 3 kG by means of microwave-induced optical nuclear polarization. We also measured the polarization by the neutron transmission method. The relaxation time at 77 K in 7 G was found to be about 3 h and the enhancement of the obtained polarization compared with thermal polarization reached 8x10 4 . This method is applicable to neutron experiments

Molecular reorientation of dye doped nematic liquid crystals in the laser illumination

International Nuclear Information System (INIS)

San, S. E.; Koeysal, O.; Ecevit, F. N.

2002-01-01

In this study it is investigated how dye doped nematic liquid crystals reorient under the illumination of laser beam whose wavelength is appropriate to absorbance characteristics of the doping dye. Nematic liquid crystal E7 is used with anthraquinone dye 1% wt/wt in the preparation of the sample and this material is filled in homegenously aligned measurement cell having 15 μm thickness. Mechanism of molecular reorientation includes the absorbance effects of the energy of laser by doping dye and this reorientation causes the refractive index of the material to be changed. There are potential application possibilities of such molecular reorientation based effects in nonlinear optics such as real time holography whose basis is grating diffraction that is observed and investigated in the frame of fundamentals of molecule light interaction mechanisms. Experimental analyses allowed finding characteristic values of diffraction signals depending on physical parameters of set up for a dye doped liquid crystal system and this system provided a 20 % diffraction efficiency under the optimum circumstances

Optical properties and radiation response of Ce{sup 3+}-doped GdScO{sub 3} crystals

Energy Technology Data Exchange (ETDEWEB)

Yamaji, Akihiro; Fujimoto, Yutaka; Futami, Yoshisuke; Yokota, Yuui; Kurosawa, Shunsuke [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Kochurikhin, Vladimir [General Physics Institute, 38 Vavilov Str., 119991 Moscow (Russian Federation); Yanagida, Takayuki [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yoshikawa, Akira [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

2012-12-15

10%-Ce doped GdScO{sub 3} perovskite type single crystal was grown by the Czochralski process. The Ce concentration in the crystal was measured. No impurity phases were observed by powder X-ray diffraction analysis. We evaluated the optical and radiation properties of the grown crystal. Ce:GdScO{sub 3} crystal showed photo- and radio-luminescence peaks due to Ce{sup 3+} of 5d-4f transition and colour centre. The photoluminescence decay time was sub-ns order. The relative light yield under 5.5 MeV alpha-ray excitation was calculated to be approximately 9% of BGO. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Influence of Nd dopants on lattice parameters and thermal and elastic properties in YVO4 single crystals

International Nuclear Information System (INIS)

Kucytowski, J.; Wokulska, K.; Kazmierczak-Balata, A.; Bodzenta, J.; Lukasiewicz, T.; Hofman, B.; Pyka, M.

2008-01-01

The influence of neodymium doping on YVO 4 single crystals has been studied. The crystals were grown by the Czochralski method. One of them was pure YVO 4 and the others were doped with neodymium (YVO 4 :Nd) at various concentrations of Nd = 0.3-3.0 at.%. The changes of the lattice parameters were determined by the Bond's method [W.L. Bond, Acta Cryst. 13 (1960) 814]. The thermal diffusivity and the velocity of ultrasound using the photothermal method with mirage effect and the pulse echo method [J. Bodzenta, M. Pyka, J. Phys. IV France 137 (2006) 259] were measured. In the examined crystals, it was found that the lattice parameters increase while the thermal diffusivity decreases with increasing concentration of Nd atoms

Self-diffusion of calcium and yttrium in pure and YF3-doped CaF2 single crystals

International Nuclear Information System (INIS)

Kucheria, C.S.

1979-07-01

Self-diffusion coefficients for Ca and Y were measured in pure and YF 3 -doped CaF 2 crystals for dopant levels ranging from 2 to 10 mole %. Diffusion data were analyzed as a function of temperature and as a function of composition. Comparison of Arrhenius relationships for both Ca and Y showed that the activation energy for cation diffusion decreased approximately linearly as the YF 3 dopant level increased. Atomic jump pathways were considered and the decrease in the activation energy was explained by an increase in the constriction sizes due to Willis cluster formation. Diffusion coefficients for both cations were found to increase approximately linearly with square of the mole percent YF 3 . A comparison of activation energies and diffusion coefficients for both cations in doped crystals indicated that Y required lower activation energy for diffusion than Ca but the diffusion coefficient was also lower for Y compared to Ca. The smaller activation energy for Y was explained by the smaller ionic size of Y, whereas the smaller diffusion coefficient for Y was explained on the basis of highly correlated jumps of Y ions because of interaction between Y/sub Ca/ and V/sub Ca/

Investigation of self-frequency doubling crystals, yttrium calcium oxyborate (YCOB), doped with neodymium or ytterbium

Science.gov (United States)

Ye, Qing

1999-09-01

There is a need for low cost red, green, and blue (RGB) lasers for a number of commercial applications such as high-resolution laser printing, full color laser display. While semiconductor lasers still have both availability (green and blue) and beam quality (red) problems, nonlinear frequency conversion of diode-pumped solid state lasers are good alternatives. Among them, self- frequency doubling is an attractive approach because of its simpler design and lower cost. Unfortunately, few known crystals possess self-frequency doubling property. A newly discovered yttrium calcium oxyborate (YCOB) can fill in the role because it has adequate lasing and nonlinear frequency conversion efficiency. More importantly, YCOB crystal melts congruently so that high quality, large size single crystals can be grown using conventional Czochralski melt pulling technique. The thermal mechanical properties, linear and nonlinear optical properties of YCOB, laser properties of Nd:YCOB and Yb:YCOB crystals were investigated. Based on the calculated second harmonic phase matching angles, Nd:YCOB laser rods were fabricated. Self-frequency doubled green emission with 62 mW output power and red emission with 16 mW output power were successfully demonstrated using diode-pumping. It is the first time to achieve the continuous wave (cw) red lasing in Nd doped rare-earth calcium oxyborates. Rare-earth ions doping in YCOB crystal can not only achieve lasing, but also affect the physical and chemical properties of the crystal. The stability field of YCOB is reduced in proportion to both the ionic size differences from yttrium and doping concentrations of the rare-earth ions. The doping also changes the linear and nonlinear optical properties of the material. For example, the second harmonic conversion efficiency of 20% Yb doped YCOB was enhanced by more than 15% compared to undoped YCOB. The absorption cutoff edge of 20% Yb:YCOB was red- shift by more than 60 nm. Similar effects were observed in

Influence of VO2+ ions on structural and optical properties of potassium succinate-succinic acid single crystal for non-linear optical applications

Science.gov (United States)

Juliet sheela, K.; Subramanian, P.

2018-04-01

A transparent and good optical quality semi organic single crystal of vanadium doped potassium succinate-succinic acid (KSSA) was synthesized by slow evaporation technique at room temperature. The structural perfection was supported by the powder XRD of the KSSA-VO2+ single crystal. Optical behavior of the material was discovered from the absorption and transmission spectra of UV-vis-NIR characterization. Functional group and presence of metal ion in the specimen are depicted from FTIR traces. From the photoluminescence studies, emission of wavelength in the violet region (418 nm) at the excitation of 243 nm could be ascertained. EDAX, SEM measurements identify presence of elements and pictures the step-line growth and the imperfection presents in the grown crystal. EPR analysis extracts the information about the local site symmetry around the impurity ion, molecular orbital coefficients, admixture coefficients and ground state wave function of VO2+ doped KSSA single crystal. Second harmonic generation (SHG) efficiency of the grown crystal was investigated to explore the NLO characteristic of the material.

Water activated doping and transport in multilayered germanane crystals

International Nuclear Information System (INIS)

Young, Justin R; Johnston-Halperin, Ezekiel; Chitara, Basant; Cultrara, Nicholas D; Arguilla, Maxx Q; Jiang, Shishi; Fan, Fan; Goldberger, Joshua E

2016-01-01

The synthesis of germanane (GeH) has opened the door for covalently functionalizable 2D materials in electronics. Herein, we demonstrate that GeH can be electronically doped by incorporating stoichiometric equivalents of phosphorus dopant atoms into the CaGe 2 precursor. The electronic properties of these doped materials show significant atmospheric sensitivity, and we observe a reduction in resistance by up to three orders of magnitude when doped samples are measured in water-containing atmospheres. This variation in resistance is a result of water activation of the phosphorus dopants. Transport measurements in different contact geometries show a significant anisotropy between in-plane and out-of-plane resistances, with a much larger out-of-plane resistance. These measurements along with finite element modeling results predict that the current distribution in top-contacted crystals is restricted to only the topmost, water activated crystal layers. Taken together, these results pave the way for future electronic and optoelectronic applications utilizing group IV graphane analogues. (paper)

Measuring of nonlinearity of dye doped liquid crystals using of self phase modulation effect

International Nuclear Information System (INIS)

Abedi, M.; Jafari, A.; Tajalli, H.

2007-01-01

Self phase modulation in dye doped liquid crystals has investigated and the nonlinearity of dye doped liquid crystals is measured by this effect. The Self phase modulation effect can be used for producing optical micro rings that have many applications in photonics and laser industries.

single crystals

Indian Academy of Sciences (India)

2018-05-18

May 18, 2018 ... Abstract. 4-Nitrobenzoic acid (4-NBA) single crystals were studied for their linear and nonlinear optical ... studies on the proper growth, linear and nonlinear optical ..... between the optic axes and optic sign of the biaxial crystal.

Alloying effects of refractory elements in the dislocation of Ni-based single crystal superalloys

Directory of Open Access Journals (Sweden)

Shiyu Ma

2016-12-01

Full Text Available The alloying effects of W, Cr and Re in the [100] (010 edge dislocation cores (EDC of Ni-based single crystal superalloys are investigated using first-principles based on the density functional theory (DFT. The binding energy, Mulliken orbital population, density of states, charge density and radial distribution functions are discussed, respectively. It is clearly demonstrated that the addition of refractory elements improves the stability of the EDC systems. In addition, they can form tougher bonds with their nearest neighbour (NN Ni atoms, which enhance the mechanical properties of the Ni-based single crystal superalloys. Through comparative analysis, Cr-doped system has lower binding energy, and Cr atom has evident effect to improve the systemic stability. However, Re atom has the stronger alloying effect in Ni-based single crystal superalloys, much more effectively hindering dislocation motion than W and Cr atoms.

Spin-State Transition in La1-xSrxCoO3 Single Crystals

Science.gov (United States)

Bhardwaj, S.; Prabhakaran, D.; Awasthi, A. M.

2011-07-01

We present a study of the thermal conductivity (κ), specific heat (Cp) and Raman spectra of La1-xSrxCoO3 (x = 0,0.1) single crystals. Both the specimens have low thermal conductivity and board Raman peaks, arising from strong scattering of phonons by lattice disorder, produced by (and doping-enhanced) spin-states admixture of the Co3+ ions. The thermal conductivity anomalously deviates from ˜1/T behaviour at high (room) temperatures, expected of an insulator. High-temperature specific heat reveals large decrease in the metal-insulator (M-I) transition temperature with Sr-doping.

Crystal growth and physical properties of Ferro-pnictides

Energy Technology Data Exchange (ETDEWEB)

Aswartham, Saicharan

2012-11-08

The thesis work presented here emphasizes important aspects of crystal growth and the influence of chemical substitution in Fe-As superconductors. High temperature solution growth technique is one of most powerful and widely used technique to grow single crystals of various materials. The biggest advantage of high temperature solution growth technique is the, possibility of growing single crystals from both congruently and incongruently melting materials. Solution growth technique has the potential to control high vapour pressures, given the fact that, in Fe-based superconductors elements with high vapour pressure like As, K, Li and Na have to be handled during the crystal growth procedure. In this scenario high temperature solution growth is the best suitable growth technique to synthesize sizable homogeneous single crystals. Using self-flux high temperature solution growth technique, large centimeter-sized high quality single crystals of BaFe{sub 2}As{sub 2} were grown. This pristine compound BaFe{sub 2}As{sub 2} undergoes structural and magnetic transition at T{sub S/N} = 137 K. By suppressing this magnetic transition and stabilizing tetragonal phase with chemical substitution, like Co-doping and Na-doping, bulk superconductivity is achieved. Superconducting transitions of as high as T{sub c} = 34 K with Na substitution and T{sub c} = 25 K with Co-doping were obtained. A combined electronic phase diagram has been achieved for both electron doping with Co and hole doping with Na in BaFe{sub 2}As{sub 2}. Single crystals of LiFe{sub 1-x}Co{sub x}As with x = 0, 0.025, 0.05 and 0.075 were grown by a self-flux high temperature solution growth technique. The charge doping in LiFeAs is achieved with the Co-doping in Fe atoms. The superconducting properties investigated by means of temperature dependent magnetization and resistivity revealed that superconductivity is shifted to lower temperatures and with higher amount of charge carriers superconductivity is killed

Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect

Science.gov (United States)

Knight, Sean; Mock, Alyssa; Korlacki, Rafał; Darakchieva, Vanya; Monemar, Bo; Kumagai, Yoshinao; Goto, Ken; Higashiwaki, Masataka; Schubert, Mathias

2018-01-01

The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal β-Ga2O3 is experimentally determined by the mid-infrared optical Hall effect to be (0.284 ± 0.013)m0 combining investigations on (010) and ( 2 ¯01 ) surface cuts. This result falls within the broad range of values predicted by theoretical calculations for undoped β-Ga2O3. The result is also comparable to recent density functional calculations using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional, which predict an average effective mass of 0.267m0. Within our uncertainty limits, we detect no anisotropy for the electron effective mass, which is consistent with most previous theoretical calculations. We discuss upper limits for possible anisotropy of the electron effective mass parameter from our experimental uncertainty limits, and we compare our findings with recent theoretical results.

Microscopic Mechanism of Doping-Induced Kinetically Constrained Crystallization in Phase-Change Materials.

Science.gov (United States)

Lee, Tae Hoon; Loke, Desmond; Elliott, Stephen R

2015-10-07

A comprehensive microscopic mechanism of doping-induced kinetically constrained crystallization in phase-change materials is provided by investigating structural and dynamical dopant characteristics via ab initio molecular dynamics simulations. The information gained from this study may provide a basis for a fast screening of dopant species for electronic memory devices, or for understanding the general physics involved in the crystallization of doped glasses. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Diode-pumped laser with Yb:YAG single-crystal fiber grown by the micro-pulling down technique

Science.gov (United States)

Sangla, D.; Aubry, N.; Didierjean, J.; Perrodin, D.; Balembois, F.; Lebbou, K.; Brenier, A.; Georges, P.; Tillement, O.; Fourmigué, J.-M.

2009-02-01

Laser emission obtained from an Yb:YAG single-crystal fiber directly grown by the micro-pulling down technique is demonstrated for the first time. We achieved 11.2 W of continuous wave (CW) output power at 1031 nm for 55 W of incident pump power at 940 nm. In the Q-switched regime, we obtained pulses as short as 17 ns, for an average power of 2.3 W at 2 kHz corresponding to an energy of 1.15 mJ. In both cases, the M 2 factor was 2.5. This single-crystal fiber showed performance similar to a standard rod elaborated by the Czochralski method. The potential of Yb3+-doped single-crystal fibers is presented for scalable high-average and high-peak-power laser systems.

H+ irradiation effect in Co-doped BaFe2As2 single crystals

International Nuclear Information System (INIS)

Nakajima, Y.; Tsuchiya, Y.; Taen, T.; Tamegai, T.; Kitamura, H.; Murakami, T.

2011-01-01

The effect of H + irradiation on the suppression of Tc in Co-doped BaFe 2 As 2 . H + irradiation introduces nonmagnetic scattering centers. Critical Scattering rate is much higher than that expected in s±-pairing scenario. We report the suppression of the critical temperature T c in single crystalline Ba(Fe 1-x Co x ) 2 As 2 at under-, optimal-, and over-doping levels by 3 MeV proton irradiation. T c decreases and residual resistivity increases monotonically with increasing the dose. The low-temperature resistivity does not show the upturn in contrast with the α-particle irradiated NdFeAs(O,F), which suggests that proton irradiation introduces nonmagnetic scattering centers. Critical scattering rates for all samples obtained by three different ways are much higher than that expected in s±-pairing scenario based on inter-band scattering due to antiferro-magnetic spin fluctuations.

Synthesis, electronic transport and optical properties of Si:α-Fe2O3 single crystals

NARCIS (Netherlands)

Rettie, A.J.E.; Chemelewski, W.D.; Wygant, B.R.; Lindemuth, J.; Lin, J.F.; Eisenberg, D.; Brauer, C.S.; Johnson, T.J.; Beiswenger, T.N.; Ash, R.D.; Li, X.; Zhou, J.; Mullins, C.B.

2016-01-01

We report the synthesis of silicon-doped hematite (Si:alpha-Fe2O3) single crystals via chemical vapor transport, with Si incorporation on the order of 1019 cm(-3). The conductivity, Seebeck and Hall effect were measured in the basal plane between 200 and 400 K. Distinct differences in electron

Growth and holographic data storage properties of near-stoichiometric LiTaO{sub 3} crystals doped with Mn

Energy Technology Data Exchange (ETDEWEB)

Zhang Tao [College of Science, Harbin Engineering University, Harbin 150001 (China)], E-mail: tzhang_hit02@yahoo.com; Dong Yantang; Geng Tao; Dai Qiang [College of Science, Harbin Engineering University, Harbin 150001 (China); Xu Yuheng [School of Astronautics, Harbin Institute of Technology, Harbin 150001 (China)

2009-03-15

A series of Mn-doped near-stoichiometric LiTaO{sub 3} crystals were grown from a Li-rich (Li/Nb = 1.38, atomic ratio) and varying level of Mn-doping melt using a Cz furnace equipped with a radio frequency generator. The etching experiment reveals that as-grown polarized Mn:SLN has single ferroelectric domain structures under optical microscope. By two-beam coupling experiment, we measured and systematically analyzed the photorefractive properties such as the dynamic range, the sensitivity and the loss of signal-to-noise-ratio coefficient. Based on Mn (0.05 wt%):SLN crystal, a big capacity storage of 100 holograms in a coherent volume of 0.085 cm{sup 3} have been fulfilled successfully and the storage density arrived 0.93 Gbits cm{sup -3}.

Distinctive behavior of superconducting fluctuations and pseudogap in nearly optimally doped single crystal of HgBa2CuO4+δ

International Nuclear Information System (INIS)

Grbic, M.S.; Barisic, N.; Dulcic, A.; Kupcic, I.; Li, Y.; Zhao, X.; Yu, G.; Dressel, M.; Greven, M.; Pozek, M.

2010-01-01

We have applied an unconventional microwave measurement approach to a nearly optimally doped HgBa 2 CuO 4+δ single crystal. The sample geometry assured the total lateral penetration of microwaves due to weak c-axis screening currents. With this configuration, one can achieve excellent sensitivity to small changes in conductivity. The data show that the pseudogap opens at T*=185(15)K, which is almost twice the superconducting critical temperature T c =94.3 K. In contrast, the superconducting fluctuation regime is clearly confined to a narrow temperature range T c ' ∼105(2)K, far below T*. This is confirmed by the magnetic field dependence of the microwave absorption. Hence, our results support the distinction between the physical processes of pseudogap and the superconducting ordering.

Effects of Na and K co-doping on growth and scintillation properties of Eu:SrI_2 crystals

International Nuclear Information System (INIS)

Ito, Tomoki; Yokota, Yuui; Kurosawa, Shunsuke; Kral, Robert; Pejchal, Jan; Ohashi, Yuji; Kamada, Kei; Nikl, Martin; Yoshikawa, Akira

2016-01-01

We grew Na and K co-doped Eu:SrI_2 [Na,Eu:SrI_2 and K,Eu:SrI_2] crystals by a modified micro-pulling-down method to reveal the co-doping effects on the crystal growth and scintillation properties. The non-codoped, Na0.5%, Na1.0%, K0.5% and K1.0%,Eu:SrI_2 crystals indicated high transparency while the milky parts were generated in the Na5.0% and K5.0%,Eu:SrI_2 crystals. The light yields of Na,Eu:SrI_2 and K,Eu:SrI_2 crystals under γ-ray irradiation were decreased by the Na and K co-doping. On the other hand, there was a small change within 940–1020 ns in the decay times by the Na and K co-doping. In the light yield proportionality under γ-ray irradiation, the non-proportionality in the low energy region was improved by Na and K co-doping. - Highlights: • Na or K co-doped Eu:SrI_2crystals were grown by the modified μ-PD method. • The milky parts were generated in the Na5.0% and K5.0%,Eu:SrI_2crystals. • The light yield of Eu:SrI_2was decreased by the Na or K co-doping. • The decay times of Eu:SrI_2were almost constant by the Na or K co-doping. • The non-proportionalitywas improved in the low energy region by the K co-doping.

Inhomogeneous electronic structures in heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals probed by low temperature STM/STS

Energy Technology Data Exchange (ETDEWEB)

Kinoda, Go; Nakao, Shoichiro; Motohashi, Teruki; Nakayama, Yuri; Shimizu, Keisuke; Shimoyama, Junichi; Kishio, Koji; Hanaguri, Tetsuo; Kitazawa, Koichi; Hasegawa, Tetsuya

2003-05-15

We have performed cryogenic scanning tunneling microscopy/spectroscopy (STM/STS) of heavily Pb-doped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} single crystals to investigate local electronic structures in the overdoped regime. The obtained STM/STS results at 4.3 K clearly showed local inhomogeneity of gap structure {delta} ({delta}=20-60 meV) in a scale of several nm, suggesting the coexistence of superconducting and pseudogap-like regions, even in the overdoped regime.

Advances in Single-Crystal Fibers and Thin Rods Grown by Laser Heated Pedestal Growth

Directory of Open Access Journals (Sweden)

Gisele Maxwell

2017-01-01

Full Text Available Single-crystal fibers are an intermediate between laser crystals and doped glass fibers. They have the advantages of both guiding laser light and matching the efficiencies found in bulk crystals, which is making them ideal candidates for high-power laser and fiber laser applications. This work focuses on the growth of a flexible fiber with a core of dopant (Er, Nd, Yb, etc. and a polycrystalline clad of yttrium aluminum garnet (YAG that will exhibit good wave guiding properties. Direct growth or a combination of growth and cladding experiments are described. Scattering loss measurements at visible wavelengths, along with dopant profile characterization with damage threshold results, are also presented. For single-pass amplification, a single-pass linear gain of 7.4 was obtained for 29 nJ pulses of 5 ns duration at 1 MHz repetition rate. We also obtained a laser efficiency of over 58% in a diode-pumped configuration. These results confirm the potential for single-crystal fibers to overcome the limitations of the glass fibers commonly used in fiber lasers, making them prime candidates for high-power compact fiber lasers and amplifiers.

Thermal optical nonlinearity in photonic crystal fibers filled with nematic liquid crystals doped with gold nanoparticles

Science.gov (United States)

Lesiak, Piotr; Budaszewski, Daniel; Bednarska, Karolina; Wójcik, Michał; Sobotka, Piotr; Chychłowski, Miłosz; Woliński, Tomasz R.

2017-05-01

In this work we studied a newly reported class of nonlinear effects observed in 5CB liquid crystals doped with gold nanoparticles (GNPs). The size of the GNP was determined by direct TEM imaging and by X-ray scattering of the diluted NP solution. GNPs was coated by thiols with the ratio of mesogenic to n-alkyl thiols varying from 1:2 to 1:1. The research involved comparing properties of both undoped and doped 5CB (nematic LC) by infiltrating LC cell and microholes of the photonic crystal fiber (PCF) separately. In our experiment the PCF fiber type LMA-10 made by NKT Photonics as host material has been used.

Chemical forms of 35S in KCl crystals doped with elementary 35S. Pt. 1

International Nuclear Information System (INIS)

Maddock, A.G.; Todorovsky, D.S.

1983-01-01

KCl crystals have been doped with 35 S at low chemical concentrations. Upon solution of the doped crystals in cyanide solution and analysis by the method of Kasrai and Maddock, the 35 S appears in the same chemical forms as are found for the 35 S produced in similar crystals by the (n, p) reaction. Reactions are suggested whereby these products may be produced. (orig.)

Origin of colossal dielectric permittivity of rutile Ti₀.₉In₀.₀₅Nb₀.₀₅O₂: single crystal and polycrystalline.

Science.gov (United States)

Song, Yongli; Wang, Xianjie; Sui, Yu; Liu, Ziyi; Zhang, Yu; Zhan, Hongsheng; Song, Bingqian; Liu, Zhiguo; Lv, Zhe; Tao, Lei; Tang, Jinke

2016-02-12

In this paper, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10(4), dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In + Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.

Praseodymium Cuprate Thin Film Cathodes for Intermediate Temperature Solid Oxide Fuel Cells: Roles of Doping, Orientation, and Crystal Structure.

Science.gov (United States)

Mukherjee, Kunal; Hayamizu, Yoshiaki; Kim, Chang Sub; Kolchina, Liudmila M; Mazo, Galina N; Istomin, Sergey Ya; Bishop, Sean R; Tuller, Harry L

2016-12-21

Highly textured thin films of undoped, Ce-doped, and Sr-doped Pr 2 CuO 4 were synthesized on single crystal YSZ substrates using pulsed laser deposition to investigate their area-specific resistance (ASR) as cathodes in solid-oxide fuel cells (SOFCs). The effects of T' and T* crystal structures, donor and acceptor doping, and a-axis and c-axis orientation on ASR were systematically studied using electrochemical impedance spectroscopy on half cells. The addition of both Ce and Sr dopants resulted in improvements in ASR in c-axis oriented films, as did the T* crystal structure with the a-axis orientation. Pr 1.6 Sr 0.4 CuO 4 is identified as a potential cathode material with nearly an order of magnitude faster oxygen reduction reaction kinetics at 600 °C compared to thin films of the commonly studied cathode material La 0.6 Sr 0.4 Co 0.8 Fe 0.2 O 3-δ . Orientation control of the cuprate films on YSZ was achieved using seed layers, and the anisotropy in the ASR was found to be less than an order of magnitude. The rare-earth doped cuprate was found to be a versatile system for study of relationships between bulk properties and the oxygen reduction reaction, critical for improving SOFC performance.

Growth and optical properties of Tm:GdVO{sub 4} single crystal

Energy Technology Data Exchange (ETDEWEB)

Urata, Y.; Akagawa, K.; Wada, S.; Tashiro, H. [Photodynamics Research Center, Sendai (Japan). Inst. of Physical and Chemical Research; Suh, S.J.; Yoon, D.H. [Photodynamics Research Center, Sendai (Japan). Inst. of Physical and Chemical Research]|[Dept. of Metallurgical Engineering, Sung Kyun Kwan Univ. (Korea, Republic of); Fukuda, T. [Photodynamics Research Center, Sendai (Japan). Inst. of Physical and Chemical Research]|[Inst. for Materials Research, Tohoku Univ. (Japan)

1999-04-01

Thulium-doped gadolinium vanadate (Tm:GdVO{sub 4}) single crystal has been successfully grown by a modified Czochralski (CZ) technique. Effective distribution coefficient of Tm was determined to be 0.74. Absorption characterization was performed in the 800 nm region and the maximum absorption peak was found at 799 nm for {pi} polarization. Fluorescence spectra for tuning at the maximum absorption were obtained around 1.8-2.0 {mu}m region with 100 nm bandwidth. This suggests that a Tm:GdVO{sub 4} crystal is expected as a new promising LD pumped solid-state laser in the 2 {mu}m region. (orig.) 9 refs.

Critical current densities and vortex dynamics in FeTexSe1-x single crystals

International Nuclear Information System (INIS)

Taen, T.; Tsuchiya, Y.; Nakajima, Y.; Tamegai, T.

2010-01-01

The critical current density and the normalized relaxation rate are reported in FeTe 0.59 Se 0.41 single crystal. Critical current density is of order of 10 5 A/cm 2 , which is comparable to that in Co-doped BaFe 2 As 2 . In low temperature and low field region, the vortex dynamics of this system is well defined by the collective creep theory, which is quite similar to Co-doped BaFe 2 As 2 reported before. We also discuss the origin of the anomaly in the field dependence of the relaxation rate.

Crystal structure of a Zn-doped derivative of the Li17Ge4 compound

International Nuclear Information System (INIS)

Lacroix-Orio, L.; Tillard, M.; Belin, C.

2008-01-01

The compound Li 17-ε Zn ε Ge 4 has been obtained as a side product during the preparation of the intermetallic compound Li 8 Zn 2 Ge 3 from the elements. Its structure has been determined from single crystal X-ray diffraction intensities measured at 173 K. It crystallizes in the cubic system, F4-bar3m space group, a = 18.842(1) A, Z = 20. Its crystal structure is slightly different from those so far reported in the literature for the Zn-free phase Li 17 Ge 4 , particularly concerned are the positions and the site occupations of Li atoms. Most likely, these structural variations result from the presence of a small Zn concentration in the compound. The Zn doping atom has been found only at the specific Li 4d site (about 3 at.% Zn)

Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-doped GaN crystals

International Nuclear Information System (INIS)

Mezdrogina, M.M.; Krivolapchuk, V.V.; Petrov, V.N.; Rodin, S.N.; Cherenkov, A.V.

2006-01-01

It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. The sensitizing effect of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, the emission is observed in visible and infrared ranges of the photoluminescence spectrum [ru

Refractive Indices in Undoped and MgO-Doped Near-Stoichiometric LiTaO3 Crystals

Science.gov (United States)

Nakamura, Masaru; Higuchi, Shinji; Takekawa, Shunji; Terabe, Kazuya; Furukawa, Yasunori; Kitamura, Kenji

2002-04-01

Undoped and MgO (0.5 and 1.0-mol%)-doped near-stoichiometric LiTaO3 (SLT) crystals were grown from off-congruent Li-rich solutions (Li˜ 60 mol%) by the double-crucible Czochralski method using a continuous SLT ceramic grain charging system. Curie temperatures of the undoped and MgO (0.5 and 1.0-mol%)-doped SLT crystals are 688, 694 and 695°C, respectively. The ordinary and extraordinary refractive indices (no, ne) of these crystals were measured by the prism coupling technique in the wavelength range from 0.440 to 1.050 μm at room temperature, and the temperature-independent Sellmeier equations for each crystal were derived from the measured refractive index data. no of the SLT crystal was almost the same as that of a congruent-melt LiTaO3 (CLT) crystal, while ne of the SLT crystal was lower than that of the CLT crystal. ne was lower than no for the SLT crystal, similar to as in the case of the LiNbO3 crystal. The refractive indices of the SLT crystal, no and ne, were found to be almost independent of MgO concentration at the doping level of 0.5 and 1.0 mol%.

Principles of crystallization, and methods of single crystal growth

International Nuclear Information System (INIS)

Chacra, T.

2010-01-01

Most of single crystals (monocrystals), have distinguished optical, electrical, or magnetic properties, which make from single crystals, key elements in most of technical modern devices, as they may be used as lenses, Prisms, or grating sin optical devises, or Filters in X-Ray and spectrographic devices, or conductors and semiconductors in electronic, and computer industries. Furthermore, Single crystals are used in transducer devices. Moreover, they are indispensable elements in Laser and Maser emission technology.Crystal Growth Technology (CGT), has started, and developed in the international Universities and scientific institutions, aiming at some of single crystals, which may have significant properties and industrial applications, that can attract the attention of international crystal growth centers, to adopt the industrial production and marketing of such crystals. Unfortunately, Arab universities generally, and Syrian universities specifically, do not give even the minimum interest, to this field of Science.The purpose of this work is to attract the attention of Crystallographers, Physicists and Chemists in the Arab universities and research centers to the importance of crystal growth, and to work on, in the first stage to establish simple, uncomplicated laboratories for the growth of single crystal. Such laboratories can be supplied with equipment, which are partly available or can be manufactured in the local market. Many references (Articles, Papers, Diagrams, etc..) has been studied, to conclude the most important theoretical principles of Phase transitions,especially of crystallization. The conclusions of this study, are summarized in three Principles; Thermodynamic-, Morphologic-, and Kinetic-Principles. The study is completed by a brief description of the main single crystal growth methods with sketches, of equipment used in each method, which can be considered as primary designs for the equipment, of a new crystal growth laboratory. (author)

Properties of transition metal-doped zinc chalcogenide crystals for tunable IR laser radiation

International Nuclear Information System (INIS)

DeLoach, L.D.; Page, R.H.; Wilke, G.D.

1995-01-01

The spectroscopic properties of Cr 2+ , Co 2+ , and Ni 2+ -doped single crystals of ZnS, ZnSe, and ZnTe have been investigated to understand their potential application as mid-IR tunable solid-state laser media. The spectroscopy indicated divalent Cr was the most favorable candidate for efficient room temperature lasing, and accordingly, a laser-pumped laser demonstration of Cr:ZnS and Cr:ZnSe has been performed. The lasers' output were peaked at ∼ 2.35 μm and the highest measured slope efficiencies were ∼ 20% in both cases

Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-Doped GaN crystals

International Nuclear Information System (INIS)

Mezdrogina, M. M.; Krivolapchuk, V. V.; Petrov, V. N.; Rodin, S. N.; Cherenkov, A. V.

2006-01-01

It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. Sensitization of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, emission is observed in the visible (λ = 360-440 and 530-560 nm) and IR (λ = 1.54 μm) spectral regions

The effect of Nd and Mg doping on the micro-Raman spectra of LiNbO3 single-crystals

International Nuclear Information System (INIS)

Quispe-Siccha, R; Villagran-Muniz, M; MejIa-Uriarte, E V; Jaque, D; GarcIa Sole, J; Jaque, F; Sato-Berru, R Y; Camarillo, E; Hernandez A, J; Murrieta S, H

2009-01-01

The LiNbO 3 congruent crystals doped with small Nd concentrations, 1 (TO 1 ) and A 1 (TO 2 ) modes, the half-width composition and the area ratio of the A 1 (TO 4 ) and E(TO 8 ) bands, we reached several conclusions about the incorporation mechanism of the Nd and Mg ions into the LiNbO 3 lattice. Likewise the Raman shift and half-width of the E(TO 1 ) and E(TO 7 ) modes were investigated in the Z direction. Results indicate that Mg and Nd ions are located in the Li site for low doping concentrations and for larger concentrations there is a replacement in both Li and Nb ion sites.

Growth and luminescent properties of Yb3+--doped oxide single crystals for scintillator application

International Nuclear Information System (INIS)

Yoshikawa, A.; Ogino, H.; Shim, J.B.; Nikl, M.; Solovieva, N.; Fukuda, T.

2004-01-01

Rod-shaped (Lu 1-x Yb x ) 3 Al 5 O 12 with x=0.05, 0.15, 0.30 and (Y 1-x Yb x )AlO 3 with x=0.05, 0.10, 0.30 single crystals were grown by the micro-pulling-down method. Edge-defined film-fed growth method was used to prepare (Y 0.9 Yb 0.1 )VO 4 crystal, while Ca 8 (La 1.98 Yb 0.02 )(PO 4 ) 6 O 2 crystal was grown by the Czochralski method. Luminescence of these crystals was studied with main attention paid to the charge transfer emission of Yb 3+ . Temperature tuned decay times in the time scale of units--tens of nanosecond was measured as a feature possibly interesting for an application in scintillation detectors in positron emission tomography

Evolution of electrical properties and domain configuration of Mn modified Pb(In1/2Nb1/2)O3-PbTiO3 single crystals

Science.gov (United States)

Qiao, Huimin; He, Chao; Yuan, Feifei; Wang, Zujian; Li, Xiuzhi; Liu, Ying; Guo, Haiyan; Long, Xifa

2018-04-01

The acceptor doped relaxor-based ferroelectric materials are useful for high power applications such as probes in ultrasound-guided high intensity focused ultrasound therapy. In addition, a high Curie temperature is desired because of wider temperature usage and improved temperature stability. Previous investigations have focused on Pb(Mg1/3Nb2/3)O3-PbTiO3 and Pb(Zn1/3Nb2/3)O3-PbTiO3 systems, which have a ultrahigh piezoelectric coefficient and dielectric constant, but a relatively low Curie temperature. It is desirable to study the binary relaxor-based system with a high Curie temperature. Therefore, Pb(In1/2Nb1/2)O3-PbTiO3 (PINT) single crystals were chosen to study the Mn-doped influence on their electrical properties and domain configuration. The evolution of ferroelectric hysteresis loops for doped and virgin samples exhibit the pinning effect in Mn-doped PINT crystals. The relaxation behaviors of doped and virgin samples are studied by fit of the modified Curie-Weiss law and Volgel-Fucher relation. In addition, a short-range correlation length was fitted to study the behavior of polar nanoregions based on the domain configuration obtained by piezoresponse force microscopy. Complex domain structures and smaller short-range correlation lengths (100-150 nm for Mn-doped PINT and >400 nm for pure PINT) were obtained in the Mn-doped PINT single crystals.

Frequency tunability of solid-core photonic crystal fibers filled with nanoparticle-doped liquid crystals

OpenAIRE

Scolari, Lara; Gauza, Sebastian; Xianyu, Haiqing; Zhai, Lei; Eskildsen, Lars; Alkeskjold, Thomas Tanggaard; Wu, Shin-Tson; Bjarklev, Anders Overgaard

2009-01-01

We infiltrate liquid crystals doped with BaTiO3 nanoparticles in a photonic crystal fiber and compare the measured transmission spectrum with the one achieved without dopant. New interesting features, such as frequency modulation response of the device and a transmission spectrum with tunable attenuation on the short wavelength side of the widest bandgap, suggest a potential application of this device as a tunable all-in-fiber gain equalization filter with an adjustable slope. The tunability ...

Near-infrared and upconversion properties of neodymium-doped RE0.8La0.2VO4 (RE = Y, Gd) single-crystal fibres grown by the laser-heated pedestal growth technique

International Nuclear Information System (INIS)

Camargo, A S S de; Nunes, L A O; Andreeta, M R B; Hernandes, A C

2002-01-01

Neodymium-doped Y 0.8 La 0.2 VO 4 and Gd 0.8 La 0.2 VO 4 single-crystal fibres were successfully grown by the laser-heated pedestal growth (LHPG) technique. The fibres were completely transparent and no dark inclusions were observed by optical microscopy. In the characterization process, microprobe Raman, optical absorption, fluorescence, lifetime, and gain-excited state absorption spectra were investigated in addition to upconversion measurements. The fibres' structural and spectroscopic properties are very similar to those of YVO 4 and GdVO 4 bulk laser crystals, with the advantageous characteristic of broadened spectral linewidths that facilitate the pumping of the 1064 nm emission by a diode laser. These fairly new crystal compositions, that can be grown in fast and economical processes, are potential candidates for use as compact laser-active media

HOMO-LUMO analysis of multi walled carbon nanotubes doped Tetrafluoro Phthalate crystals for nonlinear optical applications

Science.gov (United States)

Latha, B.; Kumaresan, P.; Nithiyanantham, S.; Sampathkumar, K.

2018-01-01

The MWCNTs doped Tetrafluoro Phthalate (C6H2F4O4) precious stones are constantly having higher transmission rate contrasted with immaculate Tetrafluoro Phthalate crystal. The dependability of Tetrafluoro Phthalate crystal was enhanced by doping MWCNTs.The basic, synthetic, optical, mechanical and non-direct optical properties of the doped precious crystals were dissected with the portrayal concentrates, for example, powder XRD, FT-IR, UV-Visible, Hardness and SHG estimations individually. The dopants are relied upon to substitute the carbon iotas in the Tetrafluoro Phthalate grid because of their change of valency and in addition vicinity of ionic sweep. The strength and charge delocalization of the particle were additionally concentrated on by characteristic security orbital (NBO) examination. The HOMO-LUMO energies depict the charge exchange happens inside the atom. Atomic electrostatic potential has been dissected. The SHG productivity of the immaculate and colors doped TFP crystals were additionally contemplated utilizing Nd:YAG Q-exchanged laser.

CRYSTAL-QUASICHEMICAL ANALYSIS OF DEFECT SUBSYSTEM OF DOPED PbTe: Sb CRYSTALS AND Pb-Sb-Te SOLID SOLUTIONS

Directory of Open Access Journals (Sweden)

D.M. Freik

2014-05-01

Full Text Available Within crystalquasichemical formalism models of point defects of crystals in the Pb-Sb-Te system were specified. Based on proposed crystalquasichemical formulae of antimony doped crystals PbTe:Sb amphoteric dopant effect was explained. Mechanisms of solid solution formation for РbТе-Sb2Те3: replacement of antimony ions lead sites  with the formation of cation vacancies  (I or neutral interstitial tellurium atoms  (II were examined. Dominant point defects in doped crystals PbTe:Sb and РbТе-Sb2Те3 solid solutions based on p-PbTe were defined. Dependences of concentration of dominant point defects, current carriers and Hall concentration on content of dopant compound and the initial deviation from stoichiometry in the basic matrix were calculated.

Combined ion beam and hyperfine interaction studies of LiNbO3 single crystals

International Nuclear Information System (INIS)

Marques, J.G.; Kling, A.; Soares, J.C.; Rebouta, L.

1999-01-01

A review of recent studies of LiNbO 3 crystals doped with Hf and Mg,Hf combining high precision RBS/channelling, PIXE/channelling and hyperfine interaction techniques is presented. The lattice location of Hf was found to depend strongly on the dopant concentration, crystal stoichiometry and Mg co-doping level. At low concentrations Hf occupies Li sites in congruent crystals, while it occupies both Li and Nb sites for higher doping levels or in near-stoichiometric crystals. Co-doping with Mg also forces a split location of Hf in Li and Nb sites and when the MgO amount exceeds 4.5 mol% Hf occupies only Nb sites. Neutron irradiation of these crystals displaces Hf from its initial lattice site and leads to a strong decrease of the Nb site fraction. The results are discussed in the framework of the Li and Nb vacancy models currently proposed in the literature for the defect structure of LiNbO 3 . (author)

Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

NARCIS (Netherlands)

Eising, Gert; Pauza, Andrew; Kooi, Bart J.

The large effects of moderate stresses on the crystal growth rate in Ge-doped Sb phase-change thin films are demonstrated using direct optical imaging. For Ge6Sb94 and Ge7Sb93 phase-change films, a large increase in crystallization temperature is found when using a polycarbonate substrate instead of

Optical excitations in CuO2-sheets doped and undoped with electrons

International Nuclear Information System (INIS)

Tokura, Y.; Arima, T.; Koshihara, S.; Takagi, H.; Ido, T.; Ishibashi, S.; Uchida, S.

1989-01-01

This paper reports optical reflectance spectra measured on single crystals of parent families of high T c copper oxide compounds with single-layered CuO 2 -sheets, which clearly show the strong transitons across the charge-transfer (CT) gaps at 1.5-2.0 eV in various types of CuO 2 -sheets. The carrier-doping effects on the CT excitations have been investigated on the Sr-doped La 2 CuO 4 and Ce-doped Nd 2 O 4 crystals

Effect of antimony incorporation on structural properties of CuInS2 crystals

International Nuclear Information System (INIS)

Ben Rabeh, M.; Chaglabou, N.; Kanzari, M.

2010-01-01

CuInS 2 (CIS) single crystals doped with 1, 2, 3 and 4 atomic percent (at.%) of antimony (Sb) were grown by the horizontal Bridgman method. The effect of Sb doping on the structural properties of CIS crystal was studied by means of X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and PL measurements. X-ray diffraction data suggests that the doping of Sb in the CIS single crystals does not affect the tetragonal (chalcopyrite) crystal structure and exhibited a (1 1 2) preferred orientation. In addition, with increasing Sb concentration, the X-ray diffraction analysis show that Sb doped CIS crystals are more crystallized and the diffraction peaks of the CuInS 2 phase were more pronounced in particular the (1 1 2) plane. EDAX study revealed that Sb atoms can occupy the indium site and/or occupying the sulfur site to make an acceptor. PL spectra of undoped and Sb doped CIS crystals show two emission peaks at 1.52 and 1.62 eV, respectively which decreased with increasing atomic percent antimony. Sb doped CIS crystals show p-type conductivity.

Enhanced photorefractive properties in Hf, Ce and Cu co-doped LiNbO{sub 3} crystals for holographic application

Energy Technology Data Exchange (ETDEWEB)

Zhang, Tao, E-mail: tzhang_hit02@yahoo.com [Key Laboratory of In-fiber Integrated Optics, Ministry of Education of China, Harbin Engineering University, Harbin 150001 (China); College of Science, Harbin Engineering University, Harbin 150001 (China); Postdoctoral Research Station of Mechanical Engineering, College of Mechanical and Electrical Engineering, Harbin Engineering University, Harbin 150001 (China); Wang, Xin; Geng, Tao; Tong, Chengguo [Key Laboratory of In-fiber Integrated Optics, Ministry of Education of China, Harbin Engineering University, Harbin 150001 (China); College of Science, Harbin Engineering University, Harbin 150001 (China); Kang, Chong [Key Laboratory of In-fiber Integrated Optics, Ministry of Education of China, Harbin Engineering University, Harbin 150001 (China); College of Science, Harbin Engineering University, Harbin 150001 (China); Postdoctoral Research Station of Mechanical Engineering, College of Mechanical and Electrical Engineering, Harbin Engineering University, Harbin 150001 (China)

2015-04-25

Graphical abstract: Correlation spots of 200 holograms in a Hf, Ce and Cu co-doped LiNbO{sub 3}. - Highlights: • Several doped LiNbO{sub 3} crystals with various level of Hf doping were grown by Cz method. • IR peak shift is attributed to the complex defect change at different level of Hf. • Enhanced photorefractive properties have been got with higher Hf-doping level. • Reduced defect and increased photoconductivity are responsible for optical properties. • 200 holograms’ experiment is realized in a coherent volume 0.073 cm{sup 3}. - Abstract: Hf, Ce and Cu co-doped LiNbO{sub 3} crystals with various level of Hf doping were grown in air by a conventional Cz method. The infrared spectra were measured to discuss the defect structures and the mechanism of the absorption peak shift in these crystals. The light-induced scattering of the crystals was evaluated by the transmitted light method. The influence of the Hf-doping level on the photorefractive properties of Hf, Ce and Cu co-doped LiNbO{sub 3} crystals was studied via two-beam coupling. It is found that proper doping Hf is an efficient method to enhance the comprehensive photorefractive properties of the LiNbO{sub 3}. Using one of these crystals as medium, 200 holograms storage and correlation experiments based on angle fractal multiplexing have been realized in a coherent volume 0.073 cm{sup 3}. Moreover the diffraction efficiency is uniform and the storage density has reached 2.2 Gb/cm{sup 3}.

Optical tuning of photonic bandgaps in dye-doped nematic liquid crystal photonic crystal fibers

DEFF Research Database (Denmark)

Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard; Hermann, David Sparre

2005-01-01

An all-optical modulator is demonstrated, which utilizes a pulsed 532 nm laser to modulate the spectral position of the bandgaps in a photonic crystal fiber infiltrated with a dye-doped nematic liquid crystal. In order to investigate the time response of the LCPBG fiber device, a low-power CW probe...... laser was coupled into the fiber together with the pulsed pump laser of 2.3 mW and we have demonstrated a modulation frequency of up to 2 kHz....

Improvement of several properties of lead tungstate crystals with different doping ions

CERN Document Server

Auffray, Etiennette; Baccaro, Stefania; Cecilia, Angelica; Dafinei, Ioan; Diemoz, Marcella; Jarolímek, O; Korzhik, Mikhail; Lecoq, Paul; Nikl, M

1998-01-01

A very good radiation resistance of Lead Tungstate crystals is mandatory for their use in the high precision electromagnetic calorimeter of the CMS experiment at LHC. Since the beginning of 1996 we have organised systematic investigations of the parameters influencing the radiation hardness of this crystal. Two classes of parameters have been particularly studied, the first one related to the control of the stoichiometry and structure associated defects, the second one connected with the suppression and the charge compensation of existing defects with different kinds of doping ions. This paper reports about the second part of this study and complements a first paper where the role of the stoichiometry was already discussed. Results of tests are given on a significant statistical sample of full size crystals ( 23cm) which show a considerable improvement in the optical properties and the radiation resistance of appropriately doped crystals.

Thermoluminescence characteristics of Li2B4O7 single crystal dosimeters doped with Mn

International Nuclear Information System (INIS)

Ekdal, E.; Karalı, T.; Kelemen, A.; Ignatovych, M.; Holovey, V.; Harmansah, C.

2014-01-01

In this study, thermoluminescence (TL) characterization of newly developed Li 2 B 4 O 7 :Mn single crystal phosphor is reported. It is a very attractive material in personal dosimetry because of its near tissue equivalency (Z eff =7.25). The crystal was grown by the Czochralski method from high purity compounds. Glow curve, dose response, and fading and reproducibility properties of this material were investigated. Its TL glow curve showed two well separated peaks at about 105 and 220 °C with a heating rate of 2 °C s −1 . The main peak at 220 °C has a linear dose response of up to 60 Gy. The thermal fading ratio of the material is about 8% for the main peak in 10 days. The results showed that there is no significant variation of TL responses for 15 sequential measurements. Apart from the dosimetric properties above, the TL kinetic parameters of the main peak at 220 °C of Li 2 B 4 O 7 :Mn single crystal phosphor were also calculated using the various heating rates method. Activation energy and frequency factor were found as 1.21 eV and 3.75×10 11 s −1 , respectively. - Highlights: • Li 2 B 4 O 7 :Mn single crystal was investigated in terms of TL characteristics. • The material shows highly satisfactory dosimetric properties. • Various heating rates method was used for determining the kinetic parameter

Optical and dielectric studies of KH2PO4 crystal influenced by organic ligand of citric acid and l-valine: A single crystal growth and comparative study

Directory of Open Access Journals (Sweden)

Mohd Anis

Full Text Available In the present study pure, citric acid (CA and l-valine (LV doped potassium dihydrogen phosphate (KDP crystals have been grown with the aim to investigate the nonlinear optical applications facilitated by UV–visible, third order nonlinear optical (TONLO and dielectric properties. The structural parameters of grown crystals have been confirmed by single crystal X-ray diffraction analysis. The enhancement in optical transparency of KDP crystal due to addition of CA and LV has been examined within 200–900 nm by means of UV–visible spectral analysis. In addition, the transmittance data have been used to evaluate the effect of dopants on reflectance, refractive index and extinction coefficient of grown crystals in the visible region. The Z-scan analysis has been performed at 632.8 nm to identify the nature of photoinduced nonlinear refraction and nonlinear absorption in doped KDP crystals. The influence of π-bonded ligand of dopant CA and LV on TONLO susceptibility (χ3, refractive index (n2 and absorption coefficient (β of KDP crystals has been evaluated to discuss laser assisted device applications. The decrease in dielectric constant and dielectric loss of KDP crystal due to addition of CA and LV has been explored using the temperature dependent dielectric studies. Keywords: Crystal growth, Nonlinear optical materials, UV–visible studies, Z-scan analysis, Dielectric studies

Crystal growth and doping

International Nuclear Information System (INIS)

Paorici, C.

1980-01-01

Section 1 contains a self-consistent review of the basic growth features. After a short introduction concerning the driving force acting in a crystallization process, three main topics are broadly discussed: (i) interface kinetics; (ii) transport kinetics, and (iii) growth stability conditions. On point (i), after definition of the nature of interface, using Temkin's model, the growth mechanisms predicted by Burton, Cabrera and Frank (BCF) and bidimensional nucleation theories are fully developed. On points (ii) and (iii), the differential equations of the constitutional (concentration) and thermal fields are presented and discussed in terms of relevant approximations, suitable boundary conditions and limit values expected in order to have growth stability. Section 2 reports various experimental procedures for growing bulk crystals from the melt, from solutions and from the vapour phase. The basic concepts of Section 1 are amply employed for a critical discussion of possibilities, advantages and drawbacks of the methods described. Along the same lines, in Section 3 the principal epitaxial deposition procedures are highlighted. Section 4 contains a brief account of doping and of stoichiometry-defect control procedures. There is a long, carefully chosen list of bibliographical references. (author)

Nonlinear and quantum optics with liquid crystals

International Nuclear Information System (INIS)

Lukishova, Svetlana G

2014-01-01

Thermotropic liquid crystals' usual application is display technology. This paper describes experiments on light interaction with pure and doped liquid crystals under for these materials unconventional incident light powers: (1) under high-power laser irradiation, and (2) at the single-photon level. In (1), I will outline several nonlinear optical effects under high-power, nanosecond laser irradiation which should be taken into account in the design of lasers with liquid crystal components and in fabrication of optical power limiters based on liquid crystals: (1.1) athermal helical pitch dilation and unwinding of cholesteric mirrors (both in free space and inside laser resonators); (1.2) some pitfalls in measurements of refractive nonlinearity using z-scan technique under two-photon or linear absorption of liquids; (1.3) the first observation of thermal lens effects in liquid crystals under several-nanosecond, low-pulse-repetition rate (2-10 Hz) laser irradiation in the presence of two-photon absorption; (1.4) feedback-free kaleidoscope of patterns (hexagons, stripes, etc.) in dye-doped liquid crystals. In (2), at the single-photon level, it will be shown that with a proper selection of liquid crystals and a single-emitter dopant spectral range, liquid crystal structures can be used to control emitted single photons (both polarization and count rate). The application of the latter research is absolutely secure quantum communication with polarization coding of information. In particular, in (2.1), definite handedness, circular polarized cholesteric microcavity resonance in quantum dot fluorescence is reported. In (2.2), definite linear polarization of single (antibunched) photons from single-dye-molecules in planar-aligned nematic host is discussed. In (2.3), some results on photon antibunching from NV-color center in nanodiamond in liquid crystal host and circularly polarized fluorescence of definite handedness from nanocrystals doped with trivalent ions of

Thermally and optically stimulated radiative processes in Eu and Y co-doped LiCaAlF6 crystal

International Nuclear Information System (INIS)

Fukuda, Kentaro; Yanagida, Takayuki; Fujimoto, Yutaka

2015-01-01

Yttrium co-doping was attempted to enhance dosimeter performance of Eu doped LiCaAlF 6 crystal. Eu doped and Eu, Y co-doped LiCaAlF 6 were prepared by the micro-pulling-down technique, and their dosimeter characteristics such as optically stimulated luminescence (OSL) and thermally stimulated luminescence (TSL) were investigated. By yttrium co-doping, emission intensities of OSL and TSL were enhanced by some orders of magnitude. In contrast, scintillation characteristics of yttrium co-doped crystal such as intensity of prompt luminescence induced by X-ray and light yield under neutron irradiation were degraded

Transport properties of Cu-doped bismuth selenide single crystals at high magnetic fields up to 60 Tesla: Shubnikov-de Haas oscillations and π-Berry phase

Science.gov (United States)

Romanova, Taisiia A.; Knyazev, Dmitry A.; Wang, Zhaosheng; Sadakov, Andrey V.; Prudkoglyad, Valery A.

2018-05-01

We report Shubnikov-de Haas (SdH) and Hall oscillations in Cu-doped high quality bismuth selenide single crystals. To increase the accuracy of Berry phase determination by means of the of the SdH oscillations phase analysis we present a study of n-type samples with bulk carrier density n ∼1019 -1020cm-3 at high magnetic field up to 60 Tesla. In particular, Landau level fan diagram starting from the value of the Landau index N = 4 was plotted. Thus, from our data we found π-Berry phase that directly indicates the Dirac nature of the carriers in three-dimensional topological insulator (3D TI) based on Cu-doped bismuth selenide. We argued that in our samples the magnetotransport is determined by a general group of carriers that exhibit quasi-two-dimensional (2D) behaviour and are characterized by topological π-Berry phase. Along with the main contribution to the conductivity the presence of a small group of bulk carriers was registered. For 3D-pocket Berry phase was identified as zero, which is a characteristic of trivial metallic states.

Crystallization behavior of Ge-doped eutectic Sb70Te30 films in optical disks

International Nuclear Information System (INIS)

Khulbe, Pramod K.; Hurst, Terril; Mansuripur, Masud; Horie, Michikazu

2002-01-01

We report laser-induced crystallization behavior of binary Sb-Te and ternary Ge-doped eutectic Sb70Te30 thin film samples in a typical quadrilayer stack as used in phase-change optical disk data storage. Several experiments have been conducted on a two-laser static tester in which one laser operating in pulse mode writes crystalline marks on amorphous film or amorphous marks on crystalline film, while the second laser operating at low-power cw mode simultaneously monitors the progress of the crystalline or amorphous mark formation in real time in terms of the reflectivity variation. The results of this study show that the crystallization kinetics of this class of film is strongly growth dominant, which is significantly different from the crystallization kinetics of stochiometric Ge-Sb-Te compositions. In Sb-Te and Ge-doped eutectic Sb70Te30 thin-film samples, the crystallization behavior of the two forms of amorphous states, namely, as-deposited amorphous state and melt-quenched amorphous state, remains approximately same. We have also presented experiments showing the effect of the variation of the Sb/Te ratio and Ge doping on the crystallization behavior of these films

DURATION LIMIT OF LASER PULSES EMITTED FROM A Ce-DOPED CRYSTAL SHORT CAVITY

Directory of Open Access Journals (Sweden)

Le Hoang Hai

2017-11-01

Full Text Available Based on the rate equation set for broadband cavities, the dependence of pulse duration on cavity and pumping parameters is analyzed. The cavity uses a Ce-doped crystal as a gain medium. Computation results show the variation of the pulse width with the change of cavity length, mirror reflectivity, pumping energy and pumping pulse duration. A significant influence of multiple-pulse operation in limiting pulse duration is realized and a pulse-width of the order 200 ps is found to be the limit for the direct generation of ultraviolet single picosecond pulses from a Ce:LLF short cavity.

Investigation of distribution microhomogeneity of doped elements in oxide single crystals by means of LMA-AES

International Nuclear Information System (INIS)

Nikolova, L.; Krasnobaeva, N.; Manuilov, N.

1989-01-01

The distribution of V and Ti in oxide single crystals Al 2 O 3 :V 3+ , Y 3 Al 5 O 12 :V 3+ , Al 2 O 3 :Ti 3+ , Y 3 Al 5 O 12 :Ti 3+ is investigated by laser emission microspectral analysis with photographic registration of spectra. Single crystals have been grown by the method of vertical directed crystallization (method of Bridgman-Stockbarger). For evaluation of microhomogeneity of the investigated elements distribution the following statistical methods are applied: one-way variance analysis, two-way variance analysis, regression models and gradient method. A PC programme package is developed allowing to process photoregistration data, to choose the internal standard line by scatter diagrams, to perform all statistical analysis and to plot the distribution diagrams of the elements in the samples. 2 refs. (author)

Modified dynamical equation for dye doped nematic liquid crystals

Energy Technology Data Exchange (ETDEWEB)

Manohar, Rajiv, E-mail: rajlu1@rediffmail.co [Liquid Crystal Research Lab, Physics Department, University of Lucknow, Lucknow 226007 (India); Misra, Abhishek Kumar; Srivastava, Abhishek Kumar [Liquid Crystal Research Lab, Physics Department, University of Lucknow, Lucknow 226007 (India)

2010-04-15

Dye doped liquid crystals show changed dielectric properties in comparison to pure liquid crystals. These changes are strongly dependent on the concentration of dye. In the present work we have measured dielectric properties of standard nematic liquid crystals E-24 and its two guest host mixtures of different concentrations with Anthraquinone dye D5. The experimental results are fitted using linear response and in the light of this we have proposed some modifications in the dynamical equation for the nematic liquid crystals by introducing two new variables as dye concentration coefficients. The limitations of the proposed equation in high temperature range have also been discussed. With the help of the proposed dynamical equation for the guest-host liquid crystals (GHLCs) it is possible to predict the various parameters like rotational viscosity, dielectric anisotropy and relaxation time for GHLCs at other concentrations of dye in liquid crystals theoretically.

Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition

International Nuclear Information System (INIS)

Lin, Meng-Yu; Lee, Si-Chen; Lin, Shih-Yen; Wang, Cheng-Hung; Chang, Shu-Wei

2015-01-01

In this work, we first investigate the effects of partial pressures and flow rates of precursors on the single-crystal graphene growth using chemical vapor depositions on copper foils. These factors are shown to be critical to the growth rate, seeding density and size of graphene single crystals. The prepared graphene films in millimeter sizes are then bubbling transferred to silicon-dioxide/silicon substrates for high-mobility graphene transistor fabrications. After high-temperature annealing and hexamethyldisilazane passivation, the water attachment is removed from the graphene channel. The elimination of uncontrolled doping and enhancement of carrier mobility accompanied by these procedures indicate that they are promising for fabrications of graphene transistors. (paper)

Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

International Nuclear Information System (INIS)

Mita, Yoh; Kuronuma, Ryoichi; Inoue, Masanori; Sasaki, Shoichiro; Miyamoto, Yoshinobu

2004-01-01

The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection

Highly-efficient mid-infrared CW laser operation in a lightly-doped 3 at.% Er:SrF2 single crystal.

Science.gov (United States)

Su, Liangbi; Guo, Xinsheng; Jiang, Dapeng; Wu, Qinghui; Qin, Zhipeng; Xie, Guoqiang

2018-03-05

3 at.% Er:SrF 2 laser crystals with high optical quality were successfully grown using the temperature gradient technique (TGT). The intense mid-infrared emission was observed around 2.7 μm with excitation by a 970 nm LD. Based on the Judd-Ofelt theory, the emission cross-sections of the 4 I 13/2 - 4 I 11/2 transition were calculated by using the Fuchtbauer-Ladenburg (FL) method. Efficient continuous-wave laser operation at 2.8 µm was achieved with the lightly-doped 3 at.% Er:SrF 2 crystal pumped by a 970 nm laser diode. The laser output power reached up to 1.06 W with a maximum slope efficiency of 26%.

Neutron transmutation doped Ge bolometers

Science.gov (United States)

Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

1983-01-01

Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

The effect of Cu{sup II} ions in L-asparagine single crystals

Energy Technology Data Exchange (ETDEWEB)

Santana, Ricardo C., E-mail: santana@ufg.br; Gontijo, Henrique O.; Menezes, Arthur F.; Martins, José A.; Carvalho, Jesiel F., E-mail: carvalho@ufg.br

2016-11-15

We report the synthesis, crystal growth, and spectroscopic characterization of L-asparagine monohydrate (LAM) single crystals doped with CuII. The crystals were successfully grown by slow cooling from a supersaturated aqueous solution up to size of 16×12×2 mm{sup 3};the effect of copper impurities in the crystals morphology was discussed. Electron Paramagnetic Resonance (EPR) was used to calculate the g and hyperfine coupling (A) tensors of the CuII ions (g{sub 1}=2.044, g{sub 2}=2.105, g{sub 3}=2.383and A{sub 1}≈0, A{sub 2}=35, A{sub 3}=108 Gauss). The EPR spectra for certain orientations of the magnetic field suggest that CuII ions are coordinated to two {sup 14}N atoms. Correlating the EPR and optical absorption results, the crystal field and the Cu{sup II} orbital bond parameters were calculated. The results indicate that the paramagnetic center occupies interstitial rhombic distorted site and the ground orbital state for the unpaired electron is the d(x{sup 2}-y{sup 2}).

Twinning processes in Cu-Al-Ni martensite single crystals investigated by neutron single crystal diffraction method

International Nuclear Information System (INIS)

Molnar, P.; Sittner, P.; Novak, V.; Lukas, P.

2008-01-01

A neutron single crystal diffraction method for inspecting the quality of martensite single crystals is introduced. True interface-free martensite single crystals are indispensable for, e.g. measurement of elastic constants of phases by ultrasonic techniques. The neutron diffraction method was used to detect and distinguish the presence of individual lattice correspondence variants of the 2H orthorhombic martensite phase in Cu-Al-Ni as well as to follow the activity of twinning processes during the deformation test on the martensite variant single crystals. When preparing the martensite single variant prism-shaped crystals by compression deformation method, typically a small fraction of second unwanted martensitic variant (compound twin) remains in the prism samples. Due to the very low stress (∼1 MPa) for the compound twinning in many shape memory alloys, it is quite difficult not only to deplete the martensite prisms of all internal interfaces but mainly to keep them in the martensite single variant state for a long time needed for further investigations

Effect of antimony incorporation on structural properties of CuInS{sub 2} crystals

Energy Technology Data Exchange (ETDEWEB)

Ben Rabeh, M., E-mail: mohamedbenrabeh@yahoo.f [Laboratoire de Photovoltaique et Materiaux Semi-Conducteurs - ENIT BP 37, Le belvedere, 1002 Tunis (Tunisia); Chaglabou, N., E-mail: nadia_chaglabou@yahoo.f [Laboratoire de Photovoltaique et Materiaux Semi-Conducteurs - ENIT BP 37, Le belvedere, 1002 Tunis (Tunisia); Kanzari, M., E-mail: Mounir.Kanzari@ipeit.rnu.t [Laboratoire de Photovoltaique et Materiaux Semi-Conducteurs - ENIT BP 37, Le belvedere, 1002 Tunis (Tunisia)

2010-02-15

CuInS{sub 2} (CIS) single crystals doped with 1, 2, 3 and 4 atomic percent (at.%) of antimony (Sb) were grown by the horizontal Bridgman method. The effect of Sb doping on the structural properties of CIS crystal was studied by means of X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and PL measurements. X-ray diffraction data suggests that the doping of Sb in the CIS single crystals does not affect the tetragonal (chalcopyrite) crystal structure and exhibited a (1 1 2) preferred orientation. In addition, with increasing Sb concentration, the X-ray diffraction analysis show that Sb doped CIS crystals are more crystallized and the diffraction peaks of the CuInS{sub 2} phase were more pronounced in particular the (1 1 2) plane. EDAX study revealed that Sb atoms can occupy the indium site and/or occupying the sulfur site to make an acceptor. PL spectra of undoped and Sb doped CIS crystals show two emission peaks at 1.52 and 1.62 eV, respectively which decreased with increasing atomic percent antimony. Sb doped CIS crystals show p-type conductivity.

The studies of radiation distorations in CdS single crystals by using a proton back-scattering method

International Nuclear Information System (INIS)

Grigor'ev, A.N.; Dikij, N.P.; Matyash, P.P.; Nikolajchuk, L.I.; Pivovar, L.I.

1974-01-01

The radiation defects in semiconducting CdS single crystals induced during doping with 140 keV Na ions (10 15 -2.10 16 ion/cm 2 ) were studied by the orientation dependence of 700 keV proton backscattering. The absence of discrete peaks in the scattered proton eneryg spectra indicates a small contribution of direct scattering at large angles. The defects formed during doping increase the fractionof dechanneled particles, which are then scattered at large anlges. No amorphization of CdS was observed at high Na ion dose 2x10 16 ion/cm 2

Optical, thermal and magnetic studies of pure and cobalt chloride doped L-alanine cadmium chloride

Energy Technology Data Exchange (ETDEWEB)

Benila, B.S., E-mail: benjane.benila@gmail.com [Department of Physics and Research Centre, Scott Christian College (Autonomous), Nagercoil 629 003 (India); Bright, K.C. [Department of Physics, St. John' s College, Anchal, Kollam 691 306 (India); Delphine, S. Mary [Department of Physics, Holy Cross College (Autonomous), Nagercoil 629 004 (India); Shabu, R. [Department of Physics and Research Centre, Scott Christian College (Autonomous), Nagercoil 629 003 (India)

2017-03-15

Single crystals of L-alanine cadmium chloride (LACC) and cobalt chloride (Co{sup 2+}) doped LACC have been grown by the slow evaporation solution growth technique. The grown crystals were subjected to various characterizations such as powder XRD, SXRD, FTIR, UV–vis, EDAX, TG/DTA, VSM, Dielectric and Second Harmonic Generation (SHG) measurements. The lattice parameters of the grown crystals were determined by single crystal X-ray analysis. EDAX analysis confirms the presence of Co{sup 2+} ion in the host material. The functional group and optical behavior of the crystals were identified from FTIR and UV-vis spectrum analysis. Electrical parameters such as dielectric constant, dielectric loss have been studied. The thermal stability of the compound was found out using TGA/DTA analysis. Second Harmonic Generation of the samples was confirmed by Kurtz-Perry powder technique. Magnetic properties of the crystals studied by VSM were also reported. The encouraging results show that the cobalt chloride doped LACC crystals have greater potential applications in optical devices. - Graphical abstract: Fig (a) and (b) shows the transparent, stable single crystals of pure and doped crystals were obtained using slow evaporation technique. The sizes of pure and doped crystals are 20×9×2 mm{sup 3} and 18×15×1 mm{sup 3} respectively. Fig (c) is the Hysteresis loop traced at room temperature for the pure and doped crystals explains the soft ferromagnetic nature of the doped crystal. The provision for changing the value of coercivity can be used for security, switching and sensing applications. - Highlights: • Defect free crystals of pure and Co{sup 2+} ion doped L-alanine cadmium chloride were grown. • The optical, dielectric and magnetic properties of pure crystals were enhanced by adding Co{sup 2+} ion. • High optical transmittance was obtained in the entire visible and IR region. • Addition of dopant to the pure crystal altered the coercivity. • Low dielectric

Metal-doped single-walled carbon nanotubes and production thereof

Science.gov (United States)

Dillon, Anne C.; Heben, Michael J.; Gennett, Thomas; Parilla, Philip A.

2007-01-09

Metal-doped single-walled carbon nanotubes and production thereof. The metal-doped single-walled carbon nanotubes may be produced according to one embodiment of the invention by combining single-walled carbon nanotube precursor material and metal in a solution, and mixing the solution to incorporate at least a portion of the metal with the single-walled carbon nanotube precursor material. Other embodiments may comprise sputter deposition, evaporation, and other mixing techniques.

Raman spectroscopy of boron-doped single-layer graphene.

Science.gov (United States)

Kim, Yoong Ahm; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Fujimori, Toshihiko; Kaneko, Katsumi; Terrones, Mauricio; Behrends, Jan; Eckmann, Axel; Casiraghi, Cinzia; Novoselov, Kostya S; Saito, Riichiro; Dresselhaus, Mildred S

2012-07-24

The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was ~0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon-boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.

Significance of Al doping for antiferromagnetic AFII ordering in YBa₂Cu_3-xAl_xO_6+#delta# materials: A single-crystal neutron-diffraction study

DEFF Research Database (Denmark)

Brecht, E.; Schmahl, W.W.; Fuess, H.

1995-01-01

-doped single crystals show two magnetic transitions, the first between the paramagnetic state and the AFI phase, and a second transition at low temperatures between the AFI and the AFII phase. The Neel temperature T-N of the antiferromagnetic AFI phase is found to be insensitive to the Al content x as well...... as the O content 6+delta in the x-delta region investigated so far. In a limited temperature interval the order parameter shows the components of both the AFI and AFII phases indicating competing interactions. For some crystals a complete reordering to the AFII phase at 4.2 K can be observed. Although...... the antiferromagnetic ordering pattern is different for the AFI and AFII phase, the ordered moments on the Cu sites are within the experimental error ([S](Cu(2)) approximate to 0.56 mu(B), [S](Cu(1)) approximate to 0 mu(B)) identical in the two phases. Comparison of Al-doped crystals with pure crystals of the same...

Development and measurement of luminescence properties of Ce-doped Cs2LiGdBr6 crystals irradiated with X-ray, γ-ray and proton beam

Science.gov (United States)

Jang, Jonghun; Kim, H. J.; Rooh, Gul; Kim, Sunghwan

2017-12-01

The effect of higher Ce-concentration on the luminescence and scintillation properties of Cs2LiGdBr6 single crystals are studied. We used the Bridgman method for the growth of Ce-doped Cs2LiGdBr6 single crystals. Luminescence properties of the grown crystals are measured by X-ray and proton excitations. We measured the pulse height and fluorescence decay time spectra of Cs2LiGdBr6:Ce3+ with a bi-alkali photo multiplier tube (PMT) under γ-ray excitation from 137Cs source. Improvements in the scintillation properties are observed with the increase of Ce-concentration in the lattice. Detailed procedure of the crystal growth is also discussed.

Self-diffusion of calcium and yttrium in pure and YF/sub 3/-doped CaF/sub 2/ single crystals

Energy Technology Data Exchange (ETDEWEB)

Kucheria, C.S.

1979-07-01

Self-diffusion coefficients for Ca and Y were measured in pure and YF/sub 3/-doped CaF/sub 2/ crystals for dopant levels ranging from 2 to 10 mole %. Diffusion data were analyzed as a function of temperature and as a function of composition. Comparison of Arrhenius relationships for both Ca and Y showed that the activation energy for cation diffusion decreased approximately linearly as the YF/sub 3/ dopant level increased. Atomic jump pathways were considered and the decrease in the activation energy was explained by an increase in the constriction sizes due to Willis cluster formation. Diffusion coefficients for both cations were found to increase approximately linearly with square of the mole percent YF/sub 3/. A comparison of activation energies and diffusion coefficients for both cations in doped crystals indicated that Y required lower activation energy for diffusion than Ca but the diffusion coefficient was also lower for Y compared to Ca. The smaller activation energy for Y was explained by the smaller ionic size of Y, whereas the smaller diffusion coefficient for Y was explained on the basis of highly correlated jumps of Y ions because of interaction between Y/sub Ca/ and V/sub Ca/.

Cerium-doped single crystal and transparent ceramic lutetium aluminum garnet scintillators

International Nuclear Information System (INIS)

Cherepy, Nerine J.; Kuntz, Joshua D.; Tillotson, Thomas M.; Speaks, Derrick T.; Payne, Stephen A.; Chai, B.H.T.; Porter-Chapman, Yetta; Derenzo, Stephen E.

2007-01-01

For rapid, unambiguous isotope identification, scintillator detectors providing high-resolution gamma ray spectra are required. We have fabricated Lutetium Aluminum Garnet (LuAG) using transparent ceramic processing, and report a 2-mm thick ceramic exhibiting 75% transmission and light yield comparable to single-crystal LuAG:Ce. The LuAG:Ce luminescence peaks at 550 nm, providing an excellent match for Silicon Photodiode readout. LuAG is dense (6.67 g/cm 3 ) and impervious to water, exhibits good proportionality and a fast decay (∼40 ns), and we measure light yields in excess of 20,000 photons/MeV

Hydrogen bonding intermolecular effect on electro-optical response of doped 6PCH nematic liquid crystal with some azo dyes

Science.gov (United States)

Kiani, S.; Zakerhamidi, M. S.; Tajalli, H.

2016-05-01

Previous studies on the electro-optical responses of dye-doped liquid crystal have shown that dopant material have a considerable effect on their electro-optical responses. Despite the studies carried out on electro-optical properties of dye-doped liquid crystal, no attention has been paid to study of the interaction and structural effects in this procedure. In this paper, linear dyes and with similar structure were selected as dopants. The only difference in used dyes is the functional groups in their tails. So, doping of these dyes into liquid crystals determines the influence of interaction type on electro-optical behaviours of the doped systems. Therefore, in this work, two aminoazobenzene (;A-dye;: hydrogen bond donor) and dimethyl-aminoazobenzene (;B-dye;) dyes with different compositional percentages in liquid crystal host were used. Electro-optical Kerr behaviour, the pre-transition temperature and third order nonlinear susceptibility were investigated. The obtained results effectively revealed that type of interactions between the dye and liquid crystal is determinative of behavioral difference of doped system, compared to pure liquid crystal. Also, pre-transitional behaviour and thereupon Kerr electro-optical responses were affected by formed interactions into doped systems. In other words, it will be shown that addition of any dopants in liquid crystal, regardless of the nature of interactions, cannot cause appropriate electro-optical responses. In fact, type of dye, nature of interactions between dopant and liquid crystalline host as well as concentration of dye are the key factors in selecting the appropriate liquid crystal and dopant dye.

Relaxor-based ferroelectric single crystals: growth, domain engineering, characterization and applications

Science.gov (United States)

Sun, Enwei; Cao, Wenwu

2014-01-01

In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-xTixO3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from 90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe “PureWave”. The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery, crystal growth

Crystal growth and optical properties of CdS-doped lead silicate glass

International Nuclear Information System (INIS)

Liu Hao; Liu Qiming; Zhao Xiujian

2007-01-01

The crystal growth and optical properties of CdS microcrystallite-doped lead silicate glass is investigated in this paper. The existence of CdS nanocrystals was confirmed via X-ray diffraction (XRD) and transmission electron microscopy (TEM). Results reveal that a two-stage heat-treat procedure can produce a better size distribution of CdS nanocrystals than a one-stage heat-treat procedure in glasses. The second harmonic generation (SHG) from the base glass and CdS microcrystallite doped glasses was observed, and the effects of the heat treatments and the thermal poling temperature on the crystallization of CdS and second-order harmonic (SH) intensity were discussed, respectively. It is indicated that samples doped with CdS microcrystallite showed larger SH intensity than that of the base glass. Use of a higher thermal poling temperature than the glass transformation temperature does not result in a good SH intensity in glasses

Specific features of doping with antimony during the ion-beam crystallization of silicon

Energy Technology Data Exchange (ETDEWEB)

Pashchenko, A. S., E-mail: as.pashchenko@gmail.com; Chebotarev, S. N.; Lunin, L. S. [Russian Academy of Sciences, Southern Scientific Center (Russian Federation); Irkha, V. A. [Special Engineering and Technology Department “Inversiya” Ltd. (Russian Federation)

2016-04-15

A method of doping during the growth of thin films by ion-beam crystallization is proposed. By the example of Si and Sb, the possibility of controllably doping semiconductors during the ion-beam crystallization process is shown. A calibrated temperature dependence of the antimony vapor flow rate in the range from 150 to 400°C is obtained. It is established that, an increase in the evaporator temperature above 200°C brings about the accumulation of impurities in the layer growth direction. Silicon layers doped with antimony to a concentration of 10{sup 18} cm{sup –3} are grown. It is shown that, as the evaporator temperature is increased, the efficiency of the activation of antimony in silicon nonlinearly decreases from ~10{sup 0} to ~10{sup –3}.

Experimental and theoretical investigation of lattice defect structures in a series of Zn, Fe-doped nonstoichiometric lithium niobate

International Nuclear Information System (INIS)

Guo Fengyun; Lue Qiang; Sun Liang; Li Hongtao; Zhen Xihe; Xu Yuheng; Zhao Liancheng

2006-01-01

A series of the double doped lithium niobate (LiNbO 3 , LN) single crystals had been grown by Czochralski method. The Curie temperatures of various concentrations doped or [Li]/[Nb] ratio LN crystals measured by differential thermal analysis (DTA) were discussed to investigate their defect structures with Safaryan et al. new approach about LN lattice defect structure using Curie temperatures calculated. Infrared transmission spectra of various concentrations doped were used to compare the investigation above. The results show that the lithium vacancy model is the more probable to describe the lattice defect structure of the doped LN single crystal

Synthesis, crystal structure and electrochemical properties of the manganese-doped LiNaFe[PO{sub 4}]F materials

Energy Technology Data Exchange (ETDEWEB)

Ben Yahia, Hamdi, E-mail: benyahia.hamdi@aist.go.jp; Shikano, Masahiro, E-mail: shikano.masahiro@aist.go.jp; Sakaebe, Hikari; Kobayashi, Hironori

2013-08-15

The new compounds LiNaFe{sub 1−x}Mn{sub x}[PO{sub 4}]F (x ≤ 1/4) were synthesized by a solid state reaction route. The crystal structure of LiNaFe{sub 3/4}Mn{sub 1/4}[PO{sub 4}]F was determined from single crystal X-ray diffraction data. LiNaFe{sub 3/4}Mn{sub 1/4}[PO{sub 4}]F crystallizes with the Li{sub 2}Ni[PO{sub 4}]F-type structure, space group Pnma, a = 10.9719(13), b = 6.3528(7), c = 11.4532(13) Å, V = 798.31(16) Å{sup 3}, and Z = 8. The structure consists of edge-sharing (Fe{sub 3/4}Mn{sub 1/4})O{sub 4}F{sub 2} octahedra forming (Fe{sub 3/4}Mn{sub 1/4})FO{sub 3} chains running along the b-axis. These chains are interlinked by PO{sub 4} tetrahedra forming a three-dimensional framework with the tunnels and the cavities filled by the well-ordered sodium and lithium atoms, respectively. The manganese-doped phases show poor electrochemical behavior comparing to the iron pure phase LiNaFe[PO{sub 4}]F. - Highlights: • We investigated the synthesis of LiNaFe{sub 1−x}Mn{sub x}[PO{sub 4}]F by solid state reaction. • We demonstrated that a solid solution exist only for x ≤ 1/4. • We solved the crystal structure of LiNaFe{sub 3/4}Mn{sub 1/4}[PO{sub 4}]F using single crystal data. • We studied the electrochemical performances of LiNaFe{sub 1−x}Mn{sub x}[PO{sub 4}]F. • The Mn-doped phases have poor electrochemical performances comparing to LiNaFe[PO{sub 4}]F.

Thermally and optically stimulated radiative processes in Eu and Y co-doped LiCaAlF{sub 6} crystal

Energy Technology Data Exchange (ETDEWEB)

Fukuda, Kentaro, E-mail: ken-fukuda@tokuyama.co.jp [Tokuyama Corporation, 1-1 Mikage-cho, Shunan-shi, Yamaguchi 745-8648 (Japan); Yanagida, Takayuki; Fujimoto, Yutaka [Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu, Fukuoka 808-0196 (Japan)

2015-06-01

Yttrium co-doping was attempted to enhance dosimeter performance of Eu doped LiCaAlF{sub 6} crystal. Eu doped and Eu, Y co-doped LiCaAlF{sub 6} were prepared by the micro-pulling-down technique, and their dosimeter characteristics such as optically stimulated luminescence (OSL) and thermally stimulated luminescence (TSL) were investigated. By yttrium co-doping, emission intensities of OSL and TSL were enhanced by some orders of magnitude. In contrast, scintillation characteristics of yttrium co-doped crystal such as intensity of prompt luminescence induced by X-ray and light yield under neutron irradiation were degraded.

The crystal structure and luminescence quenching of poly- and single-crystalline KYW{sub 2}O{sub 8}:Tb{sup 3+}

Energy Technology Data Exchange (ETDEWEB)

Schwung, Sebastian [Fachbereich Chemieingenieurwesen, Fachhochschule Münster, Stegerwaldstraße 39, 48565 Steinfurt (Germany); Rytz, Daniel, E-mail: rytz@fee-io.de [Forschungsinstitut für mineralische und metallische Werkstoffe-Edelsteine/ Edelmetalle-GmbH (FEE), Struthstraße 2, 55743 Idar-Oberstein (Germany); Heying, Birgit; Rodewald, Ute Ch.; Niehaus, Oliver [Institut für Anorganische und Analytische Chemie, Universität Münster, Corrensstrasse 30 48149 Münster (Germany); Enseling, David [Fachbereich Chemieingenieurwesen, Fachhochschule Münster, Stegerwaldstraße 39, 48565 Steinfurt (Germany); Jüstel, Thomas, E-mail: tj@fh-muenster.de [Fachbereich Chemieingenieurwesen, Fachhochschule Münster, Stegerwaldstraße 39, 48565 Steinfurt (Germany); Pöttgen, Rainer, E-mail: pottgen@uni-muenster.de [Institut für Anorganische und Analytische Chemie, Universität Münster, Corrensstrasse 30 48149 Münster (Germany)

2015-10-15

Terbium-substituted KYW{sub 2}O{sub 8} single crystals of high optical quality were grown by the top seeded solution growth technique. The degree of yttrium–terbium mixed occupancy was determined for two samples through structure refinements on the basis of single crystal X-ray diffractometer data. Temperature dependent magnetic susceptibility data underline the paramagnetic nature of terbium doped crystals. No magnetic ordering is evident down to 2 K. Luminescence measurements yield the typical excitation and emission spectra as expected for Tb{sup 3+} activated materials. The decay time of Tb{sup 3+} decreases linearly with the Tb{sup 3+} concentration, while the excess of thermal quenching does not change significantly. At about 405 K the decay time is reduced by roughly 50% relative to the low-temperature value, both for the powders as for the single crystals. - Highlights: • Single crystalline and powder series of K(Y,Tb)W{sub 2}O{sub 8.} • Refined XRD data of high quality crystals. • Linear decrease of the decay time with Tb{sup 3+} content.

Thermo- and electro-optical properties of photonic liquid crystal fibers doped with gold nanoparticles

Directory of Open Access Journals (Sweden)

Agata Siarkowska

2017-12-01

Full Text Available Thermo- and electro-optical properties of a photonic liquid crystal fiber (PLCF enhanced by the use of dopants have been investigated. A 6CHBT nematic liquid crystal was doped with four different concentrations of gold nanoparticles (NPs, 0.1, 0.3, 0.5 and 1.0 wt %, for direct comparison of the influence of the dopant on the properties of the PLCF. The thermo-optical effects of the liquid crystal doped with gold NPs were compared in three setups, an LC cell, a microcapillary and within the PLCF, to determine if the observed responses to external factors are caused by the properties of the infiltration material or due to the setup configuration. The results obtained indicated that with increasing NP doping a significant reduction of the rise time under an external electric field occurs with a simultaneous decrease in the nematic–isotropic phase transition temperature, thus improving the thermo- and electro-optical properties of the PLCF.

Thermo- and electro-optical properties of photonic liquid crystal fibers doped with gold nanoparticles.

Science.gov (United States)

Siarkowska, Agata; Chychłowski, Miłosz; Budaszewski, Daniel; Jankiewicz, Bartłomiej; Bartosewicz, Bartosz; Woliński, Tomasz R

2017-01-01

Thermo- and electro-optical properties of a photonic liquid crystal fiber (PLCF) enhanced by the use of dopants have been investigated. A 6CHBT nematic liquid crystal was doped with four different concentrations of gold nanoparticles (NPs), 0.1, 0.3, 0.5 and 1.0 wt %, for direct comparison of the influence of the dopant on the properties of the PLCF. The thermo-optical effects of the liquid crystal doped with gold NPs were compared in three setups, an LC cell, a microcapillary and within the PLCF, to determine if the observed responses to external factors are caused by the properties of the infiltration material or due to the setup configuration. The results obtained indicated that with increasing NP doping a significant reduction of the rise time under an external electric field occurs with a simultaneous decrease in the nematic-isotropic phase transition temperature, thus improving the thermo- and electro-optical properties of the PLCF.

Growth of single-crystal W whiskers during humid H2/N2 reduction of Ni, Fe-Ni, and Co-Ni doped tungsten oxide

International Nuclear Information System (INIS)

Wang Shiliang; He Yuehui; Zou Jou; Wang Yong; Huang Han

2009-01-01

Numbers of W whiskers were obtained by reducing Ni, Ni-Fe, and Ni-Co doped tungsten oxide in a mixed atmosphere of humid H 2 and N 2 . The phases and morphologies of the reduction products were characterized by XRD and SEM. Intensive TEM and EDS analyses showed that the obtained whiskers were W single crystals which typical have alloyed particles (Ni-W, Fe-Ni, or Co-Ni-W) at the growth tips. The formed W whiskers were presumed to be induced by the alloyed particles. Our experimental results revealed that, during the reduction process of tungsten oxide, the pre-reduced Ni, Fe-Ni, or Co-Ni particles not only served as nucleation aids for the initial growth of W phase from W oxide but also played the roles of catalysts during the reductive decomposition of gaseous WO 2 (OH) 2 .

The Study of Quantum Interference in Metallic Photonic Crystals Doped with Four-Level Quantum Dots

Directory of Open Access Journals (Sweden)

Hatef Ali

2010-01-01

Full Text Available Abstract In this work, the absorption coefficient of a metallic photonic crystal doped with nanoparticles has been obtained using numerical simulation techniques. The effects of quantum interference and the concentration of doped particles on the absorption coefficient of the system have been investigated. The nanoparticles have been considered as semiconductor quantum dots which behave as a four-level quantum system and are driven by a single coherent laser field. The results show that changing the position of the photonic band gap about the resonant energy of the two lower levels directly affects the decay rate, and the system can be switched between transparent and opaque states if the probe laser field is tuned to the resonance frequency. These results provide an application for metallic nanostructures in the fabrication of new optical switches and photonic devices.

Optical properties and laser oscillations of highly neodymium-doped YAG ceramics

Energy Technology Data Exchange (ETDEWEB)

Shoji, Ichiro; Kurimura, Sunao; Sato, Yoichi; Taira, Takunori [Laser Research Center, Institute for Molecular Science, Okazaki, Aichi (Japan); Ikesue, Akio [Japan Fine Ceramics Center, Nagoya, Aichi (Japan); Yoshida, Kunio [Institute of Laser Engineering, Osaka Institute of Technology, Osaka (Japan)

2000-03-01

Diode-pumped microchip laser oscillation of highly Nd{sup 3+}-doped polycrystalline YAG ceramics has been succeeded. It is found that the loss of a 2.4 at. % neodymium-doped ceramic YAG is as low as that of a 0.9 at. % Nd:YAG single crystal. From a 4.8 at. % Nd:YAG ceramic microchip, 2.3 times higher laser output power is obtained than that from a 0.9 at. % Nd:YAG single crystal microchip. (author)

Optical properties and laser oscillations of highly neodymium-doped YAG ceramics

International Nuclear Information System (INIS)

Shoji, Ichiro; Kurimura, Sunao; Sato, Yoichi; Taira, Takunori; Ikesue, Akio; Yoshida, Kunio

2000-01-01

Diode-pumped microchip laser oscillation of highly Nd 3+ -doped polycrystalline YAG ceramics has been succeeded. It is found that the loss of a 2.4 at. % neodymium-doped ceramic YAG is as low as that of a 0.9 at. % Nd:YAG single crystal. From a 4.8 at. % Nd:YAG ceramic microchip, 2.3 times higher laser output power is obtained than that from a 0.9 at. % Nd:YAG single crystal microchip. (author)

Temperature dependence of the defect luminescence in La2Be2O5 single crystals

International Nuclear Information System (INIS)

Ogorodnikov, I.N.; Pustovarov, V.A.

2015-01-01

Temperature quenching (TQ) curves in the temperature range of 80–500 K have been studied for both the undoped, and doped with RE 3+ -ions (RE = Ce, Eu, Er, Pr, Nd) lanthanum beryllate (BLO) single crystals. Photoluminescence spectra and TQ-curves were recorded upon excitation in the absorption bands of the lattice defects. The reaction rate model has been developed to describe the experimental results. The model includes two competing processes with characteristic temperatures: thermal quenching of intracenter PL (T 1 ) and thermally stimulated migration of electronic excitations (T 2 ). The competition between these two processes leads to the observed non-monotonic TQ-curves. The rationalized formulas using three parameters (intensity, activation energy, characteristic temperature), were developed to describe each of these processes. Within the framework of the unified model, all the experimental results were described and the best fit parameters were obtained. Classification of the investigated lanthanum beryllate crystals was carried out in line with the best fit parameters obtained for the TQ-curves. - Highlights: • We studied La 2 Be 2 O 5 (BLO) single crystals (pristine and RE 3+ -doped). • We studied PL emission spectra of defects in BLO and BLO:RE 3+ . • Temperature quenching of the defect PL emission was studied at 80–500 K. • We developed the reaction rate model to describe non-monotonic TQ-curves. • TQ-curves were parameterized for BLO, BLO:RE 3+ (RE = Ce, Pr, Eu, Nd, Er).

Microwave-assisted self-doping of TiO2 photonic crystals for efficient photoelectrochemical water splitting

KAUST Repository

Zhang, Zhonghai

2014-01-08

In this article, we report that the combination of microwave heating and ethylene glycol, a mild reducing agent, can induce Ti3+ self-doping in TiO2. A hierarchical TiO2 nanotube array with the top layer serving as TiO2 photonic crystals (TiO2 NTPCs) was selected as the base photoelectrode. The self-doped TiO2 NTPCs demonstrated a 10-fold increase in visible-light photocurrent density compared to the nondoped one, and the optimized saturation photocurrent density under simulated AM 1.5G illumination was identified to be 2.5 mA cm-2 at 1.23 V versus reversible hydrogen electrode, which is comparable to the highest values ever reported for TiO2-based photoelectrodes. The significant enhancement of photoelectrochemical performance can be ascribed to the rational coupling of morphological and electronic features of the self-doped TiO 2 NTPCs: (1) the periodically morphological structure of the photonic crystal layer traps broadband visible light, (2) the electronic interband state induced from self-doping of Ti3+ can be excited in the visible-light region, and (3) the captured light by the photonic crystal layer is absorbed by the self-doped interbands. © 2013 American Chemical Society.

Single-crystal silicon trench etching for fabrication of highly integrated circuits

Science.gov (United States)

Engelhardt, Manfred

1991-03-01

The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

2013-01-01

We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

Dielectric, piezoelectric properties of MnO2-doped (K0.5Na0.5)NbO3–0.05LiNbO3 crystal grown by flux-Bridgman method

International Nuclear Information System (INIS)

Liu, Ying; Xu, Guisheng; Liu, Jinfeng; Yang, Danfeng; Chen, Xiaxia

2014-01-01

Highlights: • KNN–0.05LN based single crystals were grown by flux-Bridgman method. • Dielectric, piezoelecrc and ferroelectric properties were studied. • The effect of MnO 2 doping on the crystals' properties. • Dielectric and other properties were improved due to MnO 2 doping. - Abstract: Lead-free potassium sodium niobate piezoelectric single crystals substituted with lithium and then doped with MnO 2 (K 0.5 Na 0.5 )NbO 3 –0.05LiNbO 3 –yMnO 2 (y = 0%, 1.0% and 1.5%) (abbreviated as KNN–0.05LN–yMnO 2 ) have been grown by flux-Bridgman method using KCl–K 2 CO 3 eutectic composition as the flux. Their actual composition as well as the dielectric and piezoelectric properties were studied. Their actual composition deviated from the ratio of the raw materials due to different segregation coefficients of K and Na. The orthorhombic–tetragonal (T o–t ) and tetragonal–cubic phase transition temperature (the Curie temperature T c ) of the single crystal appears at 186 °C and 441 °C, respectively, for KNN–0.05LN–1.0%MnO 2 , shift to higher temperatures compared with that of pure KNN–0.05LN crystals, according to the dielectric permittivity versus temperature loops. The KNN–0.05LN–1.0%MnO 2 (001) plate shows higher piezoelectric coefficient d 33 and dielectric permittivity ε r when compared with pure KNN–0.05LN crystal, being on the order of 226 pC/N and 799 (161 pC/N and 530 for KNN–0.05LN), respectively. These excellent properties show that MnO 2 dopant is effective in improving KNN–0.05LN based piezoelectric crystals

ESR studies of electron irradiated K3Ir(CN)6 in KCl single crystals

International Nuclear Information System (INIS)

Vugman, N.V.; Pinhal, N.M.

1983-01-01

ESR studies of KCl single crystals doped with small amounts of K 3 Ir(CN) 6 and submitted to a prolongued 2 MeV electron irradiation at room temperature reveal the presence of the [IR(CN) 5 Cl] 4- and [Ir(CN) 4 Cl 2 ] 4- new molecular species. Ligand spin densities and ligand field parameters are calculated from the experimental hyperfine and superhyperfine interactions and compared to previous data on the [Ir(CN) 5 ] 4- species. (Author) [pt

Optical Study of Liquid Crystal Doped with Multiwalled Carbon Nanotube

Science.gov (United States)

Gharde, Rita A.; Thakare, Sangeeta Y.

2014-11-01

Liquid crystalline materials have been useful for display devices i.e watches, calculators, automobile dashboards, televisions, multi media projectors etc. as well as in electro tunable lasers, optical fibers and lenses. Carbon nanotube is chosen as the main experimental factor in this study as it has been observed that Carbon Nano Tube influence the existing properties of liquid crystal host and with the doping of CNT can enhance1 the properties of LC. The combination of carbon nanotube (CNT) and liquid crystal (LC) materials show considerable interest in the scientific community due to unique physical properties of CNT in liquid crystal. Dispersion of CNTs in LCs can provide us a cheap, simple, versatile and effective means of controlling nanotube orientation on macroscopic scale with no restrictions on nanotube type. LCs have the long range orientational order rendering them to be anisotropic phases. If CNTs can be well dispersed in LC matrix, they will align with their long axes along the LC director to minimize distortions of the LC director field and the free energy. In this paper, we doped liquid crystal (Cholesteryl Nonanoate) by a small amount of multiwall carbon nanotube 0.05% and 0.1% wt. We found that by adding carbon nanotube to liquid crystals the melting point of the mixture is decreased but TNI is increased. It has been also observed that with incereas in concentration of carbon nanotube into liquid crystal shows conciderable effect on LC. The prepared samples were characterized using various techniques to study structural, thermal and optical properties i.e PMS, FPSS, UV-Vis spectroscopy, FT-IR measurements, and DTA.

Defect modes in silver-doped photonic crystals made by holography using dichromated gelatin

Science.gov (United States)

Dai, Rui; Chen, Shujing; Ren, Zhi; Wang, Zhaona; Liu, Dahe

2012-10-01

The defect mode in silver-doped photonic crystals is investigated. 1D and 3D photonic crystals were made by holography using dichromated gelatin mixed with silver nitrate. By controlling the concentration of the silver nitrate, the defect mode was observed in the bandgaps of the holographic photonic crystals. The numerical simulations were made, and the results showed the consistency with the experimental observations.

Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

International Nuclear Information System (INIS)

Fu Jing; Shen Xiang; Nie Qiuhua; Wang Guoxiang; Wu Liangcai; Dai Shixun; Xu Tiefeng; Wang, R.P.

2013-01-01

Highlights: ► Mg-doped Ge 2 Sb 2 Te 5 (GST) phase change films with higher resistance and better thermal stability have been proposed. ► The increase of Mg content result in an enhancement in crystallization temperature, activation energy and electrical resistance. ► The proper Mg addition in GST can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase. ► The formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhancement thermal stability in Mg-doped GST films. - Abstract: Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhanced thermal stability in Mg-doped GST films.

Structural, optical and magnetic characterization of Ru doped ZnO nanorods

International Nuclear Information System (INIS)

Kumar, Sanjeev; Kaur, Palvinder; Chen, C.L.; Thangavel, R.; Dong, C.L.; Ho, Y.K.; Lee, J.F.; Chan, T.S.; Chen, T.K.; Mok, B.H.; Rao, S.M.; Wu, M.K.

2014-01-01

Graphical abstract: Ruthenium (Ru = 0%, 1% and 2%) doped nano-crystalline zinc oxide (ZnO) nanorods were synthesized by using well-known sol–gel technique. X-ray diffraction (XRD) results show that Ru (0%, 1% and 2%) doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). Williamson and Hall plot reveal that in the nanoscale dimensions, incorporation of Ru induced the tensile strain in ZnO host matrix. Photoluminescence (PL) and Raman studies of Ru doped ZnO nanorods show the formation of singly ionized oxygen vacancies which may account for the observed room temperature ferromagnetism (RTFM) in 2% Ru doped ZnO. X-ray absorption spectroscopy (XAS) reveals that Ru replace the Zn atoms in the host lattice and maintain the crystal symmetry with slightly lattice distortion. Highlights: • Ru doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). • PL and Raman studies show the formation of singly ionized oxygen vacancies in 2% Ru doped ZnO. • XAS reveals that Ru replace the Zn atoms in the host lattice with slightly lattice distortion. • Doping of Ru in ZnO nanostructures gives rise to RTFM ordering. -- Abstract: Ruthenium (Ru = 0%, 1% and 2%) doped nano-crystalline zinc oxide (ZnO) nanorods were synthesized by using well-known sol–gel technique. X-ray diffraction (XRD) results show that Ru (0%, 1% and 2%) doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). Williamson and Hall plot reveal that in the nanoscale dimensions, incorporation of Ru induced the tensile strain in ZnO host matrix. Photoluminescence (PL) and Raman studies of Ru doped ZnO nanorods show the formation of singly ionized oxygen vacancies which may account for the observed room temperature ferromagnetism (RTFM) in 2% Ru doped ZnO. X-ray absorption spectroscopy (XAS) reveals that Ru replace the Zn atoms in the host lattice and maintain the crystal symmetry with slightly lattice

Crystal growth and properties of PbI2 doped with Fe and Ni

International Nuclear Information System (INIS)

Rybak, O.V.; Lun', Yu.O.; Bordun, I.M.; Omelyan, M.F.

2005-01-01

A procedure is described for doping PbI 2 monocrystals with Fe and Ni during vapor-phase growth in a closed system in the presence of excess iodine. The rate of mass transfer in the system and the doping level of the crystals are shown to be governed by the dopant content in the source material and the source temperature. The effect of Fe and Ni doping on the low-temperature (5 K) exciton photoluminescence spectrum of PbI 2 is discussed [ru

Structure of single-chain single crystals of isotactic polystyrene and their radiation resistance

International Nuclear Information System (INIS)

Bu Haishan; Cao Jie; Xu Shengyong; Zhang Ze

1997-01-01

The structure of the single-chain single crystals of isotactic polystyrene (i-PS) was investigated by electron diffraction (ED) and high resolution electron microscopy (HREM). The nano-scale single-chain single crystals were found to be very stable to electron irradiation. According to the unit cell of i-PS crystals, the reflection rings in ED pattern and the lattice fringes in HREM images could be indexed, but the lower-index diffractions were not found. It is proposed that the single-chain single crystals are very small, thus secondary electrons may be allowed to escape and radiation damage is highly reduced, and that there are less lower-index lattice planes in the single-chain single crystals to provide sufficient diffraction intensity for recording. HREM images can be achieved at room temperature in the case of single-chain single crystals because of its stability to electron irradiation, therefore, this might be a novel experimental approach to the study of crystal structure of macromolecules

Electrolytic coloration of O22--doped NaCl crystals

International Nuclear Information System (INIS)

Qin Fang; Gu Hongen; Song Cuiying; Wang Na; Guo Meili; Wang Fen; Liu Jia

2007-01-01

O 2 2- -doped NaCl crystals are colored electrolytically by using a pointed cathode and a flat anode at various temperatures and voltages, which mainly benefit from appropriate coloration temperatures and voltages as well as anode structure of used electrolysis apparatus. Characteristic OH - , U, V 2 m , U A , V 2 , V 3 , O 2- -V a + complex, F, R 1 , R 2 and M absorption bands are observed in absorption spectra of the colored crystals. Production and conversion of color centers in electrolytic coloration is explained. Current-time curves for electrolytic colorations and their relationships with electrolytic colorations were given

Current dependent angular magnetoresistance in strongly Pr-doped Y Ba2Cu3O7-δ single crystal

International Nuclear Information System (INIS)

Sandu, V; Gyawali, P; Katuwal, T; Almasan, C C; Taylor, B J; Maple, M B

2009-01-01

We report a strong dependence of the angular magnetoresistance (AMR) on the current density in Y Ba 2 Cu 3 O 7-δ single crystal above the critical temperature T c = 13 K for any applied field up to 14 T. We estimated the current dependence from the angular dependence of the top resistance R top , as measured on the face where the current is applied, and the bottom resistance R bot as measured on the opposite face. At any temperature, both below and above T c , R top decreases as the field becomes parallel to the current and ab-plane with an angle dependence that suggests an important contribution arising from the vortex flow. R bot evolves from a monotonic to nonmonotonic angle dependence with three minima and two maxima in the angle range 0 - 180 deg. as the temperature increases. For less Pr-doped samples, Y 0.58 Pr 0.42 Ba 2 Cu 3 O 7-δ (T c = 39 K) and Y 0.68 rP 0.32 Ba 2 Cu 3 O 7-δ (T c = 55 K), where the interplane resistivity is much lower, both R top and R bot follow the same monotonic angle dependence in all temperature and field range.

Angle and Polarization Dependent Fluorescence EXAFS Measurements on Al-doped Single Crystal V_2O3 Above and Below the Transition Temperature

Science.gov (United States)

Müller, O.; Pfalzer, P.; Schramme, M.; Urbach, J.-P.; Klemm, M.; Horn, S.; Frenkel, A. I.; Denboer, M. L.

1998-03-01

We present angle and polarisation dependent flourescence EXAFS measured on Al-doped single crystal V_2O3 below and above the structural phase transition from monoclinic to trigonal. Strong self-absorption distorted the spectra; this was corrected by using the procedure described by Tröger et al. (L. Tröger, D. Arvantis, K. Baberschke, H. Michaelis, U. Grimm, and E. Zschech, Phys. Rev. B,.46), 3238 (1992), generalized to the Lytle detector employed in our work. The spectra show pronounced dependence on the angle between the threefold symmetry axes and the polarization of the incident photons, making it possible to measure the local atomic distances in different directions. We compare our results with the measurements of Frenkel et al. (A. I. Frenkel, E. A. Stern, and F. A. Chudnovsky, Sol. State Comm.102), 637 (1997) on pure V_2O3 They found that locally the monoclinic distortion persists in the trigonal metallic phase.

Investigations on the photographic elementary process in AgCl single crystal foils

International Nuclear Information System (INIS)

Schmidt, H.; Haase, G.; Zoergiebel, F.

1977-01-01

The behaviour of the latent image produced by actinic radiation (lambda = 365 nm and lambda = 407 nm) in AgCl monocrystal foils highly doped with Cd and grown and annealed under various conditions was studied by extinction measurements in the near infrared. The photographic elementary process in these highly doped crystals cannot be described satisfactorily by the classical Gurney Mott model. Therefore another model was used based on the creation of anion vacancies and molecular chlorine complexes. The radiation-induced electrons occupy these anion vacancies, and quasimetallic centres are formed. By this model the behaviour of the light-induced latent image can also be described as the nuclear particle track formation in the Cd doped AgCl crystals. (author)

Influence of microgravity on Ce-doped Bi12 SiO20 crystal defect

Indian Academy of Sciences (India)

TECS

studied by comparing space grown BSO crystal with ground grown one. These results show ... fractive properties (Aldrich et al 1971; Peltier and. Micheron ... The shape of interface changes from concave to convex by suppressing ... cations. Figure 1. Parts of Ce doped BSO crystals: (a) space growth and (b) ground growth.

Absorption Spectra Of Rbcl:Yb Rbbr:Yb And Rbi:Yb Crystals ...

African Journals Online (AJOL)

Single crystals of rubidium chloride, bromide and iodide were doped with substitutional divalent ytterbium, Yb ions, by heating them in ytterbium atmosphere. The absorption spectra of the Yb doped crystals were measured at room and liquid nitrogen temperatures. The spectra were found to consist of intense broad ...

Er –Al2O3 nanoparticles doping of borosilicate glass

Indian Academy of Sciences (India)

Administrator

for determining the optical properties.2 While in homoge- ... of RE-doped single crystals (higher absorption/emission ... nanoparticles doping on the thermal, optical, structural ... The density of the bulk glass materials was measured.

Induced Magnetic Anisotropy in Liquid Crystals Doped with Resonant Semiconductor Nanoparticles

Directory of Open Access Journals (Sweden)

Vicente Marzal

2016-01-01

Full Text Available Currently, there are many efforts to improve the electrooptical properties of liquid crystals by means of doping them with different types of nanoparticles. In addition, liquid crystals may be used as active media to dynamically control other interesting phenomena, such as light scattering resonances. In this sense, mixtures of resonant nanoparticles hosted in a liquid crystal could be a potential metamaterial with interesting properties. In this work, the artificial magnetism induced in a mixture of semiconductor nanoparticles surrounded by a liquid crystal is analyzed. Effective magnetic permeability of mixtures has been obtained using the Maxwell-Garnett effective medium theory. Furthermore, permeability variations with nanoparticles size and their concentration in the liquid crystal, as well as the magnetic anisotropy, have been studied.

Growth of single crystals of BaFe12O19 by solid state crystal growth

International Nuclear Information System (INIS)

Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia

2016-01-01

Single crystals of BaFe 12 O 19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe 12 O 19 are buried in BaFe 12 O 19 +1 wt% BaCO 3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe 12 O 19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe 12 O 19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth. - Highlights: • Single crystals of BaFe 12 O 19 are grown by solid state crystal growth. • A single crystal up to ∼130 μm thick (c-axis direction) grows on the seed crystal. • The single crystal and surrounding ceramic matrix have similar composition. • Micro-Raman scattering shows the single crystal has the BaFe 12 O 19 structure.

Relaxor-PT Single Crystal Piezoelectric Sensors

Directory of Open Access Journals (Sweden)

Xiaoning Jiang

2014-07-01

Full Text Available Relaxor-PbTiO3 piezoelectric single crystals have been widely used in a broad range of electromechanical devices, including piezoelectric sensors, actuators, and transducers. This paper reviews the unique properties of these single crystals for piezoelectric sensors. Design, fabrication and characterization of various relaxor-PT single crystal piezoelectric sensors and their applications are presented and compared with their piezoelectric ceramic counterparts. Newly applicable fields and future trends of relaxor-PT sensors are also suggested in this review paper.

Preparation of TiC single crystals

International Nuclear Information System (INIS)

Scheerer, B.; Fink, J.; Reichardt, W.

1975-07-01

TiC single crystals were prepared by vertical zone melting for measurements of the phonon dispersion by inelastic neutron scattering. The influence of the starting material and of the growing conditions on the growth of the crystal were studied. The crystals were characterized by chemical methods, EMX and neutron diffraction. It was possible to grow single crystals with a volume of up to 0.6 cm 3 and mosaic spread of less then 0.4 0 . (orig.) [de

Exploiting the natural doping gradient of Nd:YLF crystals for high-power end pumped lasers

CSIR Research Space (South Africa)

Bollig, C

2008-01-01

Full Text Available decided to use crystals of a doping concentration below the 0.5% previously used. In addition, researchers decided to exploit the natural doping gradient along the length of the boule, which is especially pronounced at low concentrations but commonly...

Thermal characterization, crystal field analysis and in-band pumped laser performance of Er doped NaY(WO(4(2 disordered laser crystals.

Directory of Open Access Journals (Sweden)

María Dolores Serrano

Full Text Available Undoped and Er-doped NaY(WO42 disordered single crystals have been grown by the Czochralski technique. The specific heat and thermal conductivity (κ of these crystals have been characterized from T = 4 K to 700 K and 360 K, respectively. It is shown that κ exhibits anisotropy characteristic of single crystals as well as a κ(T behavior observed in glasses, with a saturation mean free phonon path of 3.6 Å and 4.5 Å for propagation along a and c crystal axes, respectively. The relative energy positions and irreducible representations of Stark Er(3+ levels up to (4G(7/2 multiplet have been determined by the combination of experimental low (<10 K temperature optical absorption and photoluminescence measurements and simulations with a single-electron Hamiltonian including both free-ion and crystal field interactions. Absorption, emission and gain cross sections of the (4I(13/2↔(4I(15/2 laser related transition have been determined at 77 K. The (4I(13/2 Er(3+ lifetime (τ was measured in the temperature range of 77-300 K, and was found to change from τ (77K ≈ 4.5 ms to τ (300K ≈ 3.5 ms. Laser operation is demonstrated at 77 K and 300 K by resonantly pumping the (4I(13/2 multiplet at λ≈1500 nm with a broadband (FWHM≈20 nm diode laser source perfectly matching the 77 K crystal (4I(15/2 → (4I(13/2 absorption profile. At 77 K as much as 5.5 W of output power were obtained in π-polarized configuration with a slope efficiency versus absorbed pump power of 57%, the free running laser wavelength in air was λ≈1611 nm with the laser output bandwidth of 3.5 nm. The laser emission was tunable over 30.7 nm, from 1590.7 nm to 1621.4 nm, for the same π-polarized configuration.

Guiding and amplification properties of rod-type photonic crystal fibers with sectioned core doping

DEFF Research Database (Denmark)

Selleri, Stefano; Poli, Federica; Passaro, Davide

2009-01-01

Rod-type photonic crystal fibers are large mode area double-cladding fibers with an outer diameter of few millimeters which can provide important advantages for high-power lasers and amplifiers. Numerical studies have recently demonstrated the guidance of higher-order modes in these fibers, which...... can worsen the output beam quality of lasers and amplifiers. In the present analysis a sectioned core doping has been proposed for Yb-doped rod-type photonic crystal fibers, with the aim to improve the higher-order mode suppression. A full-vector modal solver based on the finite element method has...

Single crystal fibers growth of double lithium, lanthanium molybdate and adjustment of a micro-pulling down furnace for high vacuum setup

International Nuclear Information System (INIS)

Silva, Fernando Rodrigues da

2013-01-01

In this work we investigated crystal growth procedures aiming the development of single crystal fiber (SCF) for laser applications. For quality optimization in the fabrication of fluorides SCF a new growth chamber for a micro-pulling down furnace (μ-PD) was constructed targeting the fibers fabrication with strict atmosphere control (high vacuum, gas flux and static atmospheres). Simultaneously, the SCF growth process of rare earth double molybdates was studied. The growth of pure and Nd 3+ -doped SCF of LiLa(MoO 4 ) 2 (LLM) was studied in the range of 0,5 - 10mol% doping. The designed furnace growth chamber with controlled atmosphere was successfully constructed and tested under different conditions. Specially, it was tested with the growth of LiF SFC under CF 4 atmosphere showing the expected results. Transparent and homogeneous SCF of Nd:LLM were grown. In the pure fibers was observed facets formation, however, these defects were minimized after tuning of the growth parameters and additionally with the fibers doping. X-ray analysis showed the crystallization of a single phase (space group I4 1 /a); the optical coherence tomography showed the presence of scattering centers only in regions were some growth stability occurred due to the manual process control. The measured Nd 3+ distribution showed uniform incorporation, indicative of a segregation coefficient close to unity in LLM. The potential laser gain of the system was determined using a numerical solution of the rate equations system for the 805nm, CW pumping regime, showing the maximum laser emission gain at 1.064 μm for a Nd 3+ -doping of 5mol%. (author)

The development of a single-crystal fiber-array scintillator area detector

International Nuclear Information System (INIS)

Loong, Chun; Vitt, Richard; Sayir, Ali; Sayir, Haluk

2001-01-01

The scientific output of a neutron instrument is directly proportional to the effectiveness of its detector system-coverage of scattering area, pixel resolution, counting efficiency, signal-to-noise ratio, life time and cost. The current neutron scintillator detectors employ mainly 6 Li-doped glass and ZnS, both of which present well-know limitations such as low light output, high gamma sensitivity in the case of 6 Li-glass and optical opacity in the case of ZnS. We aim to develop a position-sensitive, flight-time differentiable, efficient and cost-effective neutron detector system based on single-crystal scintillator fiber-arrays. The laser-heated melt modulation fiber growth technology developed at NASA provides the means to grow high-purity single-crystal fibers or rods of variable diameters (200 μm to 5 mm) and essentially unlimited length. Arrays of such fibers can be tailored to meet the requirements of pixel size, geometric configuration, and coverage area for a detector system. We report a plan in the growth and characterization of scintillators based on lithium silicates and boron aluminates using Ce as activator. (author)

Anisotropic Thermoelectric Devices Made from Single-Crystal Semimetal Microwires in Glass Coating

Science.gov (United States)

Konopko, L. A.; Nikolaeva, A. A.; Kobylianskaya, A. K.; Huber, T. E.

2018-04-01

Thermoelectric heat conversion based on the Seebeck and Peltier effects generated at the junction between two materials of type-n and type-p is well known. Here, we present a demonstration of an unconventional thermoelectric energy conversion that is based on a single element made of an anisotropic material. In such materials, a heat flow generates a transverse thermoelectric electric field lying across the heat flow. Potentially, in applications involving miniature devices, the anisotropic thermoelectric (AT) effect has the advantage over traditional thermoelectrics that it simplifies the thermoelectric generator architecture. This is because the generator can be made of a single thermoelectric material without the complexity of a series of contacts forming a pile. A feature of anisotropic thermoelectrics is that the thermoelectric voltage is proportional to the element length and inversely proportional to the effective thickness. The AT effect has been demonstrated with artificial anisotropic thin film consisting of layers of alternating thermoelectric type, but there has been no demonstration of this effect in a long single-crystal. Electronic transport measurements have shown that the semimetal bismuth is highly anisotropic. We have prepared an experimental sample consisting of a 10-m-long glass-insulated single-crystal tin-doped bismuth microwire (d = 4 μm). Crucial for this experiment is the ability to grow the microwire as a single-crystal using a technique of recrystallization with laser heating and under a strong electric field. The sample was wound as a spiral, bonded to a copper disk, and used in various experiments. The sensitivity of the sample to heat flow is as high as 10-2 V/W with a time constant τ of about 0.5 s.

Anisotropic Thermoelectric Devices Made from Single-Crystal Semimetal Microwires in Glass Coating

Science.gov (United States)

Konopko, L. A.; Nikolaeva, A. A.; Kobylianskaya, A. K.; Huber, T. E.

2018-06-01

Thermoelectric heat conversion based on the Seebeck and Peltier effects generated at the junction between two materials of type- n and type- p is well known. Here, we present a demonstration of an unconventional thermoelectric energy conversion that is based on a single element made of an anisotropic material. In such materials, a heat flow generates a transverse thermoelectric electric field lying across the heat flow. Potentially, in applications involving miniature devices, the anisotropic thermoelectric (AT) effect has the advantage over traditional thermoelectrics that it simplifies the thermoelectric generator architecture. This is because the generator can be made of a single thermoelectric material without the complexity of a series of contacts forming a pile. A feature of anisotropic thermoelectrics is that the thermoelectric voltage is proportional to the element length and inversely proportional to the effective thickness. The AT effect has been demonstrated with artificial anisotropic thin film consisting of layers of alternating thermoelectric type, but there has been no demonstration of this effect in a long single-crystal. Electronic transport measurements have shown that the semimetal bismuth is highly anisotropic. We have prepared an experimental sample consisting of a 10-m-long glass-insulated single-crystal tin-doped bismuth microwire ( d = 4 μm). Crucial for this experiment is the ability to grow the microwire as a single-crystal using a technique of recrystallization with laser heating and under a strong electric field. The sample was wound as a spiral, bonded to a copper disk, and used in various experiments. The sensitivity of the sample to heat flow is as high as 10-2 V/W with a time constant τ of about 0.5 s.

Refractometry of TGS crystals doped with L-threonine impurity under uniaxial pressure

Energy Technology Data Exchange (ETDEWEB)

Stadnyk, V. I., E-mail: vasylstadnyk@ukr.net; Kiryk, Yu. I. [Lviv National University (Ukraine)

2013-07-15

The temperature and spectral dependences of the refractive indices of triglycine sulphate (TGS) crystals doped with L-threonine impurity have been investigated. It is established that the introduction of an impurity weakens the temperature dependence of refractive indices. The electronic polarizability, refractions, and parameters of UV oscillators of mechanically deformed impurity crystals are calculated. The temperature coefficients of the phase transition shift are determined.

Refractometry of TGS crystals doped with L-threonine impurity under uniaxial pressure

International Nuclear Information System (INIS)

Stadnyk, V. I.; Kiryk, Yu. I.

2013-01-01

The temperature and spectral dependences of the refractive indices of triglycine sulphate (TGS) crystals doped with L-threonine impurity have been investigated. It is established that the introduction of an impurity weakens the temperature dependence of refractive indices. The electronic polarizability, refractions, and parameters of UV oscillators of mechanically deformed impurity crystals are calculated. The temperature coefficients of the phase transition shift are determined

Co-doping effects on luminescence and scintillation properties of Ce doped Lu3Al5O12 scintillator

International Nuclear Information System (INIS)

Kamada, Kei; Nikl, Martin; Kurosawa, Shunsuke; Beitlerova, Alena; Nagura, Aya; Shoji, Yasuhiro; Pejchal, Jan; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira

2015-01-01

The Mg, Ca, Sr and Ba 200 ppm co-doped Ce:Lu 3 Al 5 O 12 single crystals were prepared by micro pulling down method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of the co-doping. The scintillation decays were accelerated by both Mg and Ca co-dopants. The Mg co-doped samples showed the fastest decay and the highest light yield among the co-doped samples

Electrical Properties of Zn-Phthalocyanine and Poly (3-hexylthiophene Doped Nematic Liquid Crystal

Directory of Open Access Journals (Sweden)

Y. Karakuş

2011-01-01

Full Text Available An E7 coded nematic liquid crystal was doped with zinc phthalocyanine and poly (3-hexylthiophene. A variety of properties including relaxation time, absorption coefficient, and critical frequency of this doped system were investigated using impedance spectroscopy. The doped systems displayed increased absorption coefficients in the range 0.22–0.55 and relaxation times from 5.05×10−7 s to 3.59×10−6 s with a decrease in the critical frequency from 3.54 MHz to 2.048 MHz.

Nonlinear optical and microscopic analysis of Cu2+ doped zinc thiourea chloride (ZTC) monocrystal

Science.gov (United States)

Ramteke, S. P.; Anis, Mohd; Pandian, M. S.; Kalainathan, S.; Baig, M. I.; Ramasamy, P.; Muley, G. G.

2018-02-01

Organometallic crystals offer considerable nonlinear response therefore, present article focuses on bulk growth and investigation of Cu2+ ion doped zinc thiourea chloride (ZTC) crystal to explore its technological impetus for laser assisted nonlinear optical (NLO) device applications. The Cu2+ ion doped ZTC bulk single crystal of dimension 03 × 2.4 × 0.4 cm3 has been grown from pH controlled aqueous solution by employing slow solvent evaporation technique. The structural analysis has been performed by means of single crystal X-ray diffraction technique. The doping of Cu2+ ion in ZTC crystal matrix has been confirmed by means of energy dispersive spectroscopic (EDS) technique. The origin of nonlinear optical properties in Cu2+ ion doped ZTC crystal has been studied by employing the Kurtz-Perry test and Z-scan analysis. The remarkable enhancement in second harmonic generation (SHG) efficiency of Cu2+ ion doped ZTC crystal with reference to ZTC crystal has been determined. The He-Ne laser assisted Z-scan analysis has been performed to determine the third order nonlinear optical (TONLO) nature of grown crystal. The TONLO parameters such as susceptibility, absorption coefficient, refractive index and figure of merit of Cu-ZTC crystal have been evaluated using the Z-scan transmittance data. The laser damage threshold of grown crystal to high intensity of Nd:YAG laser is found to be 706.2 MW/cm2. The hardness number, work hardening index, yield strength and elastic stiffness coefficient of grown crystal has been investigated under microhardness study. The etching study has been carried out to determine the growth likelihood, nature of etch pits and surface quality of grown crystal.

Growth, optical and EPR studies of {sup 151}Eu{sup 2+}:YAG single crystals

Energy Technology Data Exchange (ETDEWEB)

Petrosyan, A.G., E-mail: pet@ipr.sci.am [Institute for Physical Research, National Academy of Sciences, Ashtarak, 0203 (Armenia); Asatryan, H.R. [Ioffe Physical-Technical Institute, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation); Hovhannesyan, K.L.; Derdzyan, M.V. [Institute for Physical Research, National Academy of Sciences, Ashtarak, 0203 (Armenia); Feofilov, S.P. [Ioffe Physical-Technical Institute, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation); Eganyan, A.V.; Sargsyan, R.S. [Institute for Physical Research, National Academy of Sciences, Ashtarak, 0203 (Armenia)

2017-01-01

Single crystals of {sup 151}Eu:YAG were grown by the vertical Bridgman method using Eu{sub 2}O{sub 3} with isotopic enrichment of {sup 151}Eu of 97.5%. Additional Hf{sup 4+}or Si{sup 4+} ions were introduced to favor a high concentrations of Eu{sup 2+}. As compared to Eu:YAG with natural isotope composition, the EPR spectra of YAG doped with {sup 151}Eu isotope show a reduced number of hyperfine structure components and a well-resolved structure of a bigger number of electronic transitions. Optical properties of obtained crystals and the effects of heat treatments under oxidizing and reducing conditions are reported. Based on the analysis of Eu{sup 3+} distribution in oxidized Eu,Hf:YAG, in comparison to that in Eu:YAG, the concentration of Eu{sup 2+} in as-grown Eu,Hf:YAG is determined. - Highlights: • YAG:Eu,Hf single crystals containing only {sup 151}Eu isotopes were prepared. • isotopic enriched crystals gave a well-resolved EPR hyperfine structure of Eu{sup 2+} centers. • the redox ratio was followed through the Eu{sup 2+} associated absorption band at 250 nm. • the band intensities at 378 nm correlate with the Eu{sup 2+} concentration.

Electrically Anisotropic Layered Perovskite Single Crystal

KAUST Repository

Li, Ting-You

2016-04-01

Organic-inorganic hybrid perovskites (OIHPs), which are promising materials for electronic and optoelectronic applications (1-10), have made into layered organic-inorganic hybrid perovskites (LOIHPs). These LOIHPs have been applied to thin-film transistors, solar cells and tunable wavelength phosphors (11-18). It is known that devices fabricated with single crystal exhibit the superior performance, which makes the growth of large-sized single crystals critical for future device applications (19-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating the potentials in mass production. After that, we reveal anisotropic electrical and optoelectronic properties which proved the carrier propagating along inorganic framework. The carrier mobility of in-inorganic-plane (in-plane) devices shows the average value of 45 cm2 V–1 s–1 which is about 100 times greater than the record of LOIHP devices (15), showing the importance of single crystal in device application. Moreover, the LOIHP single crystals show its ultra-short carrier lifetime of 42.7 ps and photoluminescence quantum efficiency (PLQE) of 25.4 %. We expect this report to be a start of LOIHPs for advanced applications in which the anisotropic properties are needed (24-25), and meets the demand of high-speed applications and fast-response applications.

Investigations on the photographic elementary process in AgCl single crystal foils

International Nuclear Information System (INIS)

Schmidt, H.; Haase, G.; Zoergiebel, F.

1976-01-01

The behaviour of the latent image produced by actinic radiation (lambda = 365 mn and lambda = 407 nm) in AgCl-monocrystal foils highly doped with Cd and grown and annealed under various conditions was studied by extinction measurements in the near infrared. The photographic elementary process in these highly doped crystals cannot be described satisfactorily by the classical Gurney Mott model. Therefore another model was used based on the creation of anion vacancies and molecular chlorine complexes. The radiation induced electrons occupy these anion vacancies, and quasimetallic centers are formed. By this model the behaviour of the light induced latent image can as well be described as the nuclear particle track formation in the Cd doped AgCl-crystals. (orig.) [de

Local structure of vanadium in doped LiFePO4

International Nuclear Information System (INIS)

Zhao, Ting; Xu, Wei; Ye, Qing; Cheng, Jie; Zhao, Haifeng; Chu, Wangsheng; Wu, Ziyu; Univ. of Science and Technology of China, Hefei; Xia, Dingguo

2010-01-01

LiFePO 4 composites with 5 at.% vanadium doping are prepared by solid state reactions. X-ray absorption fine-structure spectroscopy is used as a novel technique to identify vanadium sites. Both experimental analyses and theoretical simulations show that vanadium does not enter into the LiFePO 4 crystal lattice. When the vanadium concentration is lower then 1 at.%, the dopant remains insoluble. Thus, a single-phase vanadium-doped LiFePO4 cannot be formed and the improved electrochemical properties of vanadium doped LiFePO 4 previously reported cannot be associated with crystal structure changes of the LiFePO 4 via vanadium doping. (orig.)

Optical characterization of epitaxial single crystal CdTe thin films on Al{sub 2}O{sub 3} (0001) substrates

Energy Technology Data Exchange (ETDEWEB)

Jovanovic, S.M.; Devenyi, G.A., E-mail: devenyga@mcmaster.ca; Jarvis, V.M.; Meinander, K.; Haapamaki, C.M.; Kuyanov, P.; Gerber, M.; LaPierre, R.R.; Preston, J.S.

2014-11-03

The optoelectronic properties of single crystal CdTe thin films were investigated by photoluminescence spectroscopy, photoreflectance spectroscopy and variable angle spectroscopic ellipsometry. The room temperature bandgap was measured to be 1.51 eV and was consistent between spectroscopic measurements and previously reported values. Breadth of bandgap emission was consistent with high quality material. Low temperature photoluminescence spectra indicated a dominant emission consistent with bound excitons. Emissions corresponding to self-compensation defects, doping and contaminants were not found. Variable angle spectroscopic ellipsometry measurements over the near-UV to infrared range demonstrated sharp resonance peaks. All spectroscopic measurements indicate high quality thin film material of comparable or better quality than bulk CdTe. - Highlights: • High quality epitaxial CdTe thin films were grown. • Two dimensional X-ray diffraction characterization confirmed single crystal material. • Photoluminescence indicated low defect density when compared to bulk single crystals. • Optical characterization indicated the presence of room temperature excitons.

Comparative study of Tm-doped and Tm-Sc co-doped Lu3Al5O12 scintillator

International Nuclear Information System (INIS)

Sugiyama, Makoto; Yanagida, Takayuki; Fujimoto, Yutaka

2014-01-01

The crystals of Tm doped and Tm-Sc co-doped Lu 3 Al 5 O 12 (LuAG) grown by the floating zone (FZ) method were examined for their optical and scintillation properties. In transmittance spectra, strong absorption lines due to Tm 3+ 4f–4f transitions were observed. X-ray excited radioluminescence spectra were measured and broad and sharp emission peaks were detected. The former one was attributed to Sc 3+ and the latter one was due to Tm 3+ 4f–4f transitions. Scintillation yield enhancement due to Sc co-doping was observed by means of 137 Cs pulse height spectra. Scintillation decay times were several tens of μs under pulse X-ray excitation. - Highlights: • LuAG:Tm and LuAG:Tm, Sc single crystals have been grown by the FZ method. • Tm 3+ 4f–4f absorption has been observed in transmittance spectra. • Scintillation yield of Tm-doped LuAG has been enhanced by Sc co-doping

Thermoluminescence studies of Nd doped Bi_4Ge_3O_1_2 crystals irradiated by UV and beta sources

International Nuclear Information System (INIS)

Karabulut, Y.; Canimoglu, A.; Ekdal, E.; Ayvacikli, M.; Can, N.; Karali, T.

2016-01-01

Thermoluminescence (TL) glow curves of pure and rare earth doped bismuth germanate (BGO) were investigated under UV and beta radiation. The glow curves of pure BGO crystal present different patterns for both kinds of radiation. The TL glow curves of BGO crystals doped with Nd ions are similar to that of pure BGO under UV radiation. The kinetic parameters, kinetic order (b), activation energy (E) and frequency factor (s) of the TL glow curves of pure BGO crystal have been determined by peak shape method. Activation energies of 3 peaks obtained by PS were found to be 1.81, 1.15 and 1.78, respectively. - Highlights: • Thermoluminescence properties of pure and Nd doped BGO crystals. • Irradiated by UV and beta for TL glow curve analysis. • Evaluation of kinetic parameters by PS method.

An investigation on the effect of gamma-irradiation on the optical absorption spectra in Cu(II) doped ammonium Tetrachlorozincate (ATZC) single crystals

International Nuclear Information System (INIS)

Abu El-Fadl, A.; Mohamad, G.A.; Abd El-Sttar, M.

2003-01-01

Optical transmittance measurements were carried out on Ammonium tetrachlorozincate (ATZC) crystals doped with small concentrations of Cu 2+ ions and irradiated with different doses of gamma-radiation. The absorption coefficient (alpha) and the extinction coefficient (K) of unirradiated and irradiated ATZC crystals were calculated. Valued of the allowed indirect optical energy gap (E g ) of ATZC were calculated as a function of gamma-dose. The effect of gamma irradiation is to increase in the absorption coefficient value and to decrease in E g value. The results could be explained in the fact that gamma irradiation produces defects of ionizing type because of internal irradiation with photon or Compton electrons

Fabrication of Microcapsules for Dye-Doped Polymer-Dispersed Liquid Crystal-Based Smart Windows.

Science.gov (United States)

Kim, Mingyun; Park, Kyun Joo; Seok, Seunghwan; Ok, Jong Min; Jung, Hee-Tae; Choe, Jaehoon; Kim, Do Hyun

2015-08-19

A dye-doped polymer-dispersed liquid crystal (PDLC) is an attractive material for application in smart windows. Smart windows using a PDLC can be operated simply and have a high contrast ratio compared to those of other devices that employed photochromic or thermochromic material. However, in conventional dye-doped PDLC methods, dye contamination can cause problems and has a limited degree of commercialization of electric smart windows. Here, we report on an approach to resolve dye-related problems by encapsulating the dye in monodispersed capsules. By encapsulation, a fabricated dye-doped PDLC had a contrast ratio of >120 at 600 nm. This fabrication method of encapsulating the dye in a core-shell structured microcapsule in a dye-doped PDLC device provides a practical platform for dye-doped PDLC-based smart windows.

Doping monolayer graphene with single atom substitutions

KAUST Repository

Wang, Hongtao

2012-01-11

Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.

High luminous flux from single crystal phosphor-converted laser-based white lighting system

KAUST Repository

Cantore, Michael

2015-12-14

The efficiency droop of light emitting diodes (LEDs) with increasing current density limits the amount of light emitted per wafer area. Since low current densities are required for high efficiency operation, many LED die are needed for high power white light illumination systems. In contrast, the carrier density of laser diodes (LDs) clamps at threshold, so the efficiency of LDs does not droop above threshold and high efficiencies can be achieved at very high current densities. The use of a high power blue GaN-based LD coupled with a single crystal Ce-doped yttrium aluminum garnet (YAG:Ce) sample was investigated for white light illumination applications. Under CW operation, a single phosphor-converted LD (pc-LD) die produced a peak luminous efficacy of 86.7 lm/W at 1.4 A and 4.24 V and a peak luminous flux of 1100 lm at 3.0 A and 4.85 V with a luminous efficacy of 75.6 lm/W. Simulations of a pc-LD confirm that the single crystal YAG:Ce sample did not experience thermal quenching at peak LD operating efficiency. These results show that a single pc-LD die is capable of emitting enough luminous flux for use in a high power white light illumination system.

MgB2 and Mg1-xAlxB2 single crystals: high pressure growth and physical properties

International Nuclear Information System (INIS)

Karpinski, J.; Kazakov, S.M.; Jun, J.; Zhigadlo, N.D.; Angst, M.; Puzniak, R.; Wisniewski, A.

2004-01-01

Single crystals of MgB 2 have been grown with a high pressure cubic anvil technique. They grow via the peritectic decomposition of the MgNB 9 ternary nitride. The crystals are of a size up to 2 x 1 x 0.1 mm 3 with a weight up to 230 μg. Typically they have transition temperatures between 38 and 38.6 K with a width of 0.3-0.5 K. Investigations of the P-T phase diagram prove that the MgB 2 phase is stable at least up to 2190 deg. C at high hydrostatic pressure in the presence of Mg vapor under high pressure. Substitution of aluminum for magnesium in single crystals leads to stepwise decrease of T c . This indicates a possible appearance of superstructures or phases with different T c 's. The upper critical field decreases with Al doping

Optically enhanced nuclear cross polarization in acridine-doped fluorene

Energy Technology Data Exchange (ETDEWEB)

Oshiro, C.M.

1982-06-01

The objective of this work has been to create large polarizations of the dilute /sup 13/C nuclei in the solid state. The idea was to create /sup 1/H polarizations larger than Boltzmann and to use the proton enhanced nuclear induction spectroscopy cross polarization technique to then transfer this large polarization to the /sup 13/C spin system. Optical Nuclear Polarization (ONP) of acridine-doped fluorene single crystals was studied. In addition, ONP of powdered samples of the acridine-doped fluorene was studied. In general, many compounds do not crystallize easily or do not form large crystals suitable for NMR experiments. Powdered, amorphous and randomly dispersed samples are generally far more readily available than single crystals. One objective of this work has been to (first) create large /sup 1/H polarizations. Although large optical proton polarizations in single crystals have been reported previously, optically generated polarizations in powdered samples have not been reported. For these reasons, ONP studies of powdered samples of the acridine-doped fluorene were also undertaken. Using ONP in combination with the proton enhanced nuclear induction spectroscopy experiment, large /sup 13/C polarizations have been created in fluorene single crystals. These large /sup 13/C polarizations have permitted the determination of the seven incongruent chemical shielding tensors of the fluorene molecule. Part 2 of this thesis describes the proton enhanced nuclear induction spectroscopy experiment. Part 3 describes the ONP experiment. Part 4 is a description of the experimental set-up. Part 5 describes the data analysis for the determination of the chemical shielding tensors. Part 6 presents the results of the ONP experiments performed in this work and the chemical shielding tensors determined.

Optically enhanced nuclear cross polarization in acridine-doped fluorene

International Nuclear Information System (INIS)

Oshiro, C.M.

1982-06-01

The objective of this work has been to create large polarizations of the dilute 13 C nuclei in the solid state. The idea was to create 1 H polarizations larger than Boltzmann and to use the proton enhanced nuclear induction spectroscopy cross polarization technique to then transfer this large polarization to the 13 C spin system. Optical Nuclear Polarization (ONP) of acridine-doped fluorene single crystals was studied. In addition, ONP of powdered samples of the acridine-doped fluorene was studied. In general, many compounds do not crystallize easily or do not form large crystals suitable for NMR experiments. Powdered, amorphous and randomly dispersed samples are generally far more readily available than single crystals. One objective of this work has been to (first) create large 1 H polarizations. Although large optical proton polarizations in single crystals have been reported previously, optically generated polarizations in powdered samples have not been reported. For these reasons, ONP studies of powdered samples of the acridine-doped fluorene were also undertaken. Using ONP in combination with the proton enhanced nuclear induction spectroscopy experiment, large 13 C polarizations have been created in fluorene single crystals. These large 13 C polarizations have permitted the determination of the seven incongruent chemical shielding tensors of the fluorene molecule. Part 2 of this thesis describes the proton enhanced nuclear induction spectroscopy experiment. Part 3 describes the ONP experiment. Part 4 is a description of the experimental set-up. Part 5 describes the data analysis for the determination of the chemical shielding tensors. Part 6 presents the results of the ONP experiments performed in this work and the chemical shielding tensors determined

Optical bistability in erbium-doped yttrium aluminum garnet crystal combined with a laser diode.

Science.gov (United States)

Maeda, Y

1994-01-10

Optical bistability was observed in a simple structure of an injection laser diode combined with an erbium-doped yttrium aluminum garnet crystal. Since a hysteresis characteristic exists in the relationship between the wavelength and the injection current of a laser diode, an optical memory function capable of holding the output status is confirmed. In addition, an optical signal inversion was caused by the decrease of transmission of the erbium-doped yttrium aluminum garnet crystal against the red shift (principally mode hopping) of the laser diode. It is suggested that the switching time of this phenomenon is the time necessary for a mode hopping by current injection.

Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

Science.gov (United States)

Yin, H.; Ziemann, P.

2014-06-01

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

Electrically Anisotropic Layered Perovskite Single Crystal

KAUST Repository

Li, Ting-You

2016-01-01

-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating

Crystal growth and scintillation properties of Ce and Eu doped LiSrAlF{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Yamaji, Akihiro, E-mail: yamaji-a@imr.tohoku.ac.jp [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Kawaguchi, Noriaki [Tokuyama Corporation, Shibuya 3-chome, Shibuya, Tokyo 150-8383 (Japan); Fujimoto, Yutaka; Yokota, Yuui [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Watanabe, Kenichi; Yamazaki, Atsushi [Department of Material, Physics and Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603 (Japan); Yoshikawa, Akira [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Pejchal, Jan [Institute of Physics AS CR, Cukrovarnicka 10, 16200 Prague 6 (Czech Republic)

2011-12-11

Ce and Eu doped LiSrAlF{sub 6} (LiSAF) single crystals for the neutron detection with different dopant concentrations were grown by the micro-pulling-down method ({mu}-PD). In Ce:LiSAF, intense emission peaks due to Ce{sup 3+} 5d-4f transitions were observed at approximately 315 and 335 nm in photo- and {alpha}-ray induced radio-luminescence spectra. In case of Eu:LiSAFs, an intense emission peak at 375 nm due to Eu{sup 2+} 5d-4f transition was observed in the radio-luminescence spectra. The pulse height spectra and decay time profiles were measured under {sup 252}Cf neutron irradiation to examine the neutron response. The Ce 3% and Eu 2% doped LiSAF showed the highest light yield of 2860 ph/n with 19 ns main decay time component and 24,000 ph/n with 1610 ns.

The Electronic and Optical Properties of Au Doped Single-Layer Phosphorene

Science.gov (United States)

Zhu, Ziqing; Chen, Changpeng; Liu, Jiayi; Han, Lu

2018-01-01

The electronic properties and optical properties of single and double Au-doped phosphorene have been comparatively investigated using the first-principles plane-wave pseudopotential method based on density functional theory. The decrease from direct band gap 0.78 eV to indirect band gap 0.22 and 0.11 eV are observed in the single and double Au-doped phosphorene, respectively. The red shifts of absorbing edge occur in both doped systems, which consequently enhance the absorbing of infrared light in phosphorene. Band gap engineering can, therefore, be used to directly tune the optical absorption of phosphorene system by substitutional Au doping.

Enhanced performance of an S-band fiber laser using a thulium-doped photonic crystal fiber

Science.gov (United States)

Muhammad, A. R.; Emami, S. D.; Hmood, J. K.; Sayar, K.; Penny, R.; Abdul-Rashid, H. A.; Ahmad, H.; Harun, S. W.

2014-11-01

This work proposes a new method to enhance the performance of an S-band fiber laser by using a thulium-doped photonic crystal fiber (PCF). The proposed method is based on amplified spontaneous emission (ASE) suppression provided by the thulium-doped PCF unique geometric structure. The enhanced performance of this filter based PCF is dependent on the short and long cut-off wavelength characteristics that define the fiber transmission window. Realizing the short wavelength cut-off location requires the PCF cladding to be doped with a high index material, which provides a refractive index difference between the core and cladding region. Achieving the long cut-off wavelength necessitates enlarging the size of the air holes surrounding the rare-earth doped core region. The PCF structure is optimized so as to achieve the desired ASE suppression regions of below 0.8 μm and above 1.8 μm. The laser performance is simulated for different host media, namely pure silica, alumino-silicate, and fluoride-based fiber ZBLAN based on this thulium-doped PCF design. The host media spectroscopic details, including lifetime variations and quantum efficiency effect on the lasing emission are also discussed. Information on the filter based PCF design is gathered via a full-vectorial finite element method analysis and specifically a numerical modelling solution for the energy level rate equation using the Runge-Kutta method. Results are analyzed for gain improvement, lasing cavity, laser efficiency and effect of core size diameter variation. Results are compared with conventional thulium-doped fiber and thulium-doped PCF for every single host media. We observe that the ZBLAN host media is the most promising candidate due to its greater quantum efficiency.

Enhanced performance of an S-band fiber laser using a thulium-doped photonic crystal fiber

International Nuclear Information System (INIS)

Muhammad, A R; Emami, S D; Penny, R; Ahmad, H; Harun, S W; Hmood, J K; Sayar, K; Abdul-Rashid, H A

2014-01-01

This work proposes a new method to enhance the performance of an S-band fiber laser by using a thulium-doped photonic crystal fiber (PCF). The proposed method is based on amplified spontaneous emission (ASE) suppression provided by the thulium-doped PCF unique geometric structure. The enhanced performance of this filter based PCF is dependent on the short and long cut-off wavelength characteristics that define the fiber transmission window. Realizing the short wavelength cut-off location requires the PCF cladding to be doped with a high index material, which provides a refractive index difference between the core and cladding region. Achieving the long cut-off wavelength necessitates enlarging the size of the air holes surrounding the rare-earth doped core region. The PCF structure is optimized so as to achieve the desired ASE suppression regions of below 0.8 μm and above 1.8 μm. The laser performance is simulated for different host media, namely pure silica, alumino-silicate, and fluoride-based fiber ZBLAN based on this thulium-doped PCF design. The host media spectroscopic details, including lifetime variations and quantum efficiency effect on the lasing emission are also discussed. Information on the filter based PCF design is gathered via a full-vectorial finite element method analysis and specifically a numerical modelling solution for the energy level rate equation using the Runge–Kutta method. Results are analyzed for gain improvement, lasing cavity, laser efficiency and effect of core size diameter variation. Results are compared with conventional thulium-doped fiber and thulium-doped PCF for every single host media. We observe that the ZBLAN host media is the most promising candidate due to its greater quantum efficiency. (paper)

Structural characterization of H plasma-doped ZnO single crystals by positron annihilation spectroscopies

Energy Technology Data Exchange (ETDEWEB)

Anwand, Wolfgang; Brauer, Gerhard; Cowan, Thomas E. [Institut fuer Strahlenphysik, Forschungszentrum Dresden-Rossendorf, P.O. Box 510 119, 01314 Dresden (Germany); Grambole, Dieter; Skorupa, Wolfgang [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, P.O. Box 510 119, 01314 Dresden (Germany); Cizek, Jakub; Kuriplach, Jan; Prochazka, Ivan [Department of Low Temperature Physics, Charles University, V Holesovickach 2, 18000 Prague (Czech Republic); Egger, Werner; Sperr, Peter [Institut fuer Angewandte Physik und Messtechnik, Fakultaet fuer Luft- und Raumfahrttechnik, Universitaet der Bundeswehr, Heisenbergweg 39, 85579 Neubiberg (Germany)

2010-11-15

Nominally undoped, hydrothermally grown ZnO single crystals have been investigated before and after exposure to remote H plasma. Structural characterizations have been made by various positron annihilation spectroscopies (continuous and pulsed slow positron beams, conventional lifetime). The content of bound hydrogen (H-b) before and after the remote H plasma treatment at the polished side of the crystals was determined at depths of 100 and 600 nm, respectively, using nuclear reaction analysis. At a depth of 100 nm, H-b increased from (11.8{+-}2.5) to (48.7{+-}7.6) x 10{sup 19} cm{sup -3} after remote H plasma treatment, whereas at 600 nm no change in H-b was observed. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

BaY2F8 single crystals doped with rare-earth ions as promising up-conversion media for UV and VUV lasers

International Nuclear Information System (INIS)

Pushkar', A A; Uvarova, T V; Molchanov, V N

2008-01-01

BaY 2 F 8 crystals are studied as promising active media for UV and VUV lasers. The up-conversion pumping of rare-earth activators is proposed to solve problems related to the solarisation of the medium and the selection of pump sources. The technology of growing oriented BaY 2 F 8 single crystals is developed and the influence of the crystal orientation on the growth rate and quality of single crystals is determined. (active media)

Single and couple doping ZnO nanocrystals characterized by positron techniques

Science.gov (United States)

Pasang, Tenzin; Namratha, Keerthiraj; Guagliardo, Paul; Byrappa, Kullaiah; Ranganathaiah, Chikkakuntappa; Samarin, S.; Williams, J. F.

2015-04-01

Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag1+ and Pd2+ dopants occupy interstitial sites of the ZnO lattice and single Ru3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn4+ + Co2+) shows similar CDB ratios as Ru3+ single-doping. Also co-doping with (Ag1+ + Pd2+) or (Ag1+ + W6+) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material.

Single and couple doping ZnO nanocrystals characterized by positron techniques

International Nuclear Information System (INIS)

Pasang, Tenzin; Namratha, Keerthiraj; Byrappa, Kullaiah; Guagliardo, Paul; Ranganathaiah, Chikkakuntappa; Samarin, S; Williams, J F

2015-01-01

Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag 1+ and Pd 2+ dopants occupy interstitial sites of the ZnO lattice and single Ru 3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn 4+ + Co 2+ ) shows similar CDB ratios as Ru 3+ single-doping. Also co-doping with (Ag 1+ + Pd 2+ ) or (Ag 1+ + W 6+ ) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material. (paper)

Synthesis and pressure effects on the La doped CaFe{sub 2}As{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Shin, Soo Hyun; Park, Tuson [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Shang, T.; Yuan, H. Q. [Dept. of physics, Zhejiang University, Hangzhou (China)

2014-09-15

We have synthesized La doped CaFe2As{sub 2} single crystals with Sn flux in an evacuated quartz ampule. Doping and pressure effects on the magnetic and superconducting properties of the under-doped Ca{sub 1-x}La{sub x}Fe{sub 2}As{sub 2} (x=0.08, 0.1) were studied by measuring electrical resistivity under quasi-hydrostatic pressure up to 21 kbar. Magnetic transition temperatures for all studied concentrations were sharply suppressed with slight amplitude of pressure, less than 3 kbar, while superconducting transition temperatures were robust against pressure. In this communication, we report temperature-pressure phase diagram for the La-doped CaFe{sub 2}As{sub 2} single crystals.

Properties of single crystal beta''-aluminas

International Nuclear Information System (INIS)

Bates, J.B.; Brown, G.M.; Kaneda, T.; Brundage, W.E.; Wang, J.C.; Engstrom, H.

1979-01-01

Large single crystals of sodium beta''-alumina were grown by slow evaporation of Na 2 O at 1690 0 C from a mixture of Na 2 CO 3 , MgO, and Al 2 O 3 . Polarized Raman measurements were made on the Na β'' single crystals and on single crystals of Li, K, Rb, and Ag β'' prepared by ion exchange of Na β''. The low frequency Raman spectra of Na, K, Rb, and Ag β'' contained four or more bands due to vibrations of the mobile cations. These results were analyzed by assuming the spectra to be due to the normal modes of a defect cluster consisting of a cation vacancy surrounded by three cations. From model calculations, the Raman band of Na β'' at 33 cm -1 is assigned to the attempt mode for diffusion of Na + ions. The structure of a Ag β'' single crystal was investigated by neutron diffraction, and 20% of the Ag + ion sites were found to be vacant

Ultra-large single crystals by abnormal grain growth.

Science.gov (United States)

Kusama, Tomoe; Omori, Toshihiro; Saito, Takashi; Kise, Sumio; Tanaka, Toyonobu; Araki, Yoshikazu; Kainuma, Ryosuke

2017-08-25

Producing a single crystal is expensive because of low mass productivity. Therefore, many metallic materials are being used in polycrystalline form, even though material properties are superior in a single crystal. Here we show that an extraordinarily large Cu-Al-Mn single crystal can be obtained by abnormal grain growth (AGG) induced by simple heat treatment with high mass productivity. In AGG, the sub-boundary energy introduced by cyclic heat treatment (CHT) is dominant in the driving pressure, and the grain boundary migration rate is accelerated by repeating the low-temperature CHT due to the increase of the sub-boundary energy. With such treatment, fabrication of single crystal bars 70 cm in length is achieved. This result ensures that the range of applications of shape memory alloys will spread beyond small-sized devices to large-scale components and may enable new applications of single crystals in other metallic and ceramics materials having similar microstructural features.Growing large single crystals cheaply and reliably for structural applications remains challenging. Here, the authors combine accelerated abnormal grain growth and cyclic heat treatments to grow a superelastic shape memory alloy single crystal to 70 cm.

Spectroscopic analysis and efficient diode-pumped 1.9 μm Tm3+-doped β'-Gd2(MoO4)3 crystal laser.

Science.gov (United States)

Tang, Jianfeng; Chen, Yujin; Lin, Yanfu; Gong, Xinghong; Huang, Jianhua; Luo, Zundu; Huang, Yidong

2011-07-04

Tm3+-doped β'-Gd2(MoO4)3 single crystal was grown by the Czochralski method. Spectroscopic analysis was carried out along different polarizations. End-pumped by a quasi-cw diode laser at 795 nm in a plano-concave cavity, an average laser output power of 58 mW around 1.9 μm was achieved in a 0.93-mm-thick crystal when the output coupler transmission was 7.1%. The absorbed pump threshold was 8 mW and the slope efficiency of the laser was 57%. This crystal has smooth and broad gain curve around 1.9 μm, which shows that it is also a potential gain medium for tunable and short pulse lasers.

Magnetic and luminescent properties of vanadium-doped ZnSe crystals

Energy Technology Data Exchange (ETDEWEB)

Radevici, Ivan, E-mail: ivarad@utu.fi [Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau (Moldova, Republic of); Nedeoglo, Natalia; Sushkevich, Konstantin [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau (Moldova, Republic of); Huhtinen, Hannu [Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Nedeoglo, Dmitrii [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., MD-2009 Chisinau (Moldova, Republic of); Paturi, Petriina [Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)

2016-12-15

Magnetic and photoluminescence properties of vanadium-doped ZnSe crystals with impurity concentrations varied by changing the V amount in the source material from 0.03 to 0.30 at% are studied in 5–300 K temperature range. Investigation of magnetic properties shows that the studied concentrations of vanadium impurity that should not disturb crystal lattice are insignificant for observing ferromagnetic behaviour even at low temperatures. The contribution of V impurity to edge emission and its influence on infra-red emission are discussed. Similarities of magnetic and luminescent properties induced by vanadium and other transition metal impurities are discussed.

Isotopically pure single crystal epitaxial diamond films and their preparation

International Nuclear Information System (INIS)

Banholzer, W.F.; Anthony, T.R.; Williams, D.M.

1992-01-01

The present invention is directed to the production of single crystal diamond consisting of isotopically pure carbon-12 or carbon-13. In the present invention, isotopically pure single crystal diamond is grown on a single crystal substrate directly from isotopically pure carbon-12 or carbon-13. One method for forming isotopically pure single crystal diamond comprises the steps of placing in a reaction chamber a single substrate heated to an elevated diamond forming temperature. Another method for forming isotopically pure single crystal diamond comprises diffusing isotopically pure carbon-12 or carbon-13 through a metallic catalyst under high pressure to a region containing a single crystal substrate to form an isotopically pure single crystal diamond layer on said single crystal substrate

Energy transfer processes in Er-doped crystals

International Nuclear Information System (INIS)

Georgescu, Serban; Toma, Octavian

2005-01-01

In this paper, the microparameters characteristic to various energy-transfer processes in erbium doped crystals are estimated using the Dexter theory. For all the investigated processes, electric dipole-dipole interaction between donor and acceptor ions is assumed. The spectra appearing in Dexter's expression of the microparameter are simulated as a superposition of Lorentzian lines, knowing the positions of both initial and final Stark levels, and calibrated using the Judd-Ofelt model. This approach can give an estimation of the importance of the energy-transfer processes. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Magnetic evolution of itinerant ferromagnetism and interlayer antiferromagnetism in cerium doped LaCo{sub 2}P{sub 2} crystals

Energy Technology Data Exchange (ETDEWEB)

Tian, Yong; Kong, Yixiu; Liu, Kai; Zhang, Anmin [Department of Physics, Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872 (China); He, Rui [Department of Physics, University of Northern Iowa, Cedar Falls, Iowa 50614 (United States); Zhang, Qingming, E-mail: qmzhang@ruc.edu.cn [Department of Physics, Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872 (China)

2017-05-01

ThCr{sub 2}Si{sub 2}-type phosphide ACo{sub 2}P{sub 2} (A=Eu, La, Pr, Nd, Ce) has the same structure as iron arsenides, but their magnetic behaviors are quite distinct. In this paper, we grew a series of La{sub 1−x}Ce{sub x}Co{sub 2}P{sub 2} single crystals (x=0.0 to1.0), made structural and magnetic characterizations. We found the introduction of cerium induces a rapid decrease of c-axis and a change from ferromagnetic to antiferromagnetic states. Compared to other trivalent doped compounds, the enhancement of ferromagnetism with doping is suppressed and the transition from ferromagnetism to antiferromagnetism appear earlier. By employing first-principles band-structure calculations, we identify the increase of Ce valence suppress the itinerant ferromagnetism and leading to formation of P-P bonding with the shortening of c-axis. The bonding effectively drives an increase of interlayer antiferromagnetic interaction, eventually leads to antiferromagnetic ordering of cobalt in high-doping region.

Theoretical investigation of zero field splitting parameter of Cr{sup 3+} doped diammonium hexaaqua magnesium sulfate

Energy Technology Data Exchange (ETDEWEB)

Kripal, Ram, E-mail: ram_kripal2001@rediffmail.com; Yadav, Awadhesh Kumar, E-mail: aky.physics@gmail.com

2015-01-01

The zero field splitting parameter D of Cr{sup 3+} doped diammonium hexaaqua magnesium sulfate (DHMS) are calculated with perturbation formula using crystal field (CF) parameters from superposition model. The theoretically calculated ZFS parameters for Cr{sup 3+} in DHMS single crystal are compared with the experimental value obtained by electron paramagnetic resonance (EPR). The theoretical ZFS parameter D is similar to that from experiment. The energy band positions of optical absorption spectra of Cr{sup 3+} doped DHMS single crystal are calculated with CFA package, which are in good match with experimental values.

Lanthanide-doped NaScF4 nanoprobes: crystal structure, optical spectroscopy and biodetection.

Science.gov (United States)

Ai, Yu; Tu, Datao; Zheng, Wei; Liu, Yongsheng; Kong, Jintao; Hu, Ping; Chen, Zhuo; Huang, Mingdong; Chen, Xueyuan

2013-07-21

Trivalent lanthanide ions (Ln(3+))-doped inorganic nanoparticles (NPs) as potential luminescent bioprobes have been attracting tremendous interest because of their unique upconversion (UC) and downconversion (DC) luminescence properties. NaScF4, as an important host material, has been rarely reported and its crystal structure remains unclear. Herein, based on the single crystal X-ray diffraction, the space group of NaScF4 crystals was determined to be P31 containing multiple sites of Sc(3+) with crystallographic site symmetry of C1, which was verified by high-resolution photoluminescence spectroscopy of Eu(3+) at low temperature (10 K). Furthermore, monodisperse and size-controllable NaScF4:Ln(3+) NPs were synthesized via a facile thermal decomposition method. The biotinylated NaScF4:Er(3+)/Yb(3+) NPs were demonstrated for their applications as a heterogeneous UC luminescence bioprobe to detect avidin with a detection limit of 180 pM. After bioconjugation with amino-terminal fragment (ATF) of urokinase plasminogen activator (uPA), NaScF4:Ln(3+) NPs also exhibited specific recognition of cancer cells overexpressed with uPA receptor (uPAR, an important marker of tumor biology and metastasis), showing great potentials in tumor-targeted bioimaging.

Photodynamic Processes in Fluoride Crystals Doped with Ce3+

Directory of Open Access Journals (Sweden)

Pavlov V.V.

2015-01-01

Full Text Available Integrated studies of photoelectric phenomena and their associated photodynamic processes in LiCaAlF6, LiLuF4, LiYF4, LiY0,5Lu0,5F4, SrAlF5 crystals doped with Ce3+ ions have been carried out using the combination of the methods of optical and dielectric spectroscopy. The numerical values of the basic parameters of photodynamic processes and their spectral dependence in 240 – 310 nm spectral range are evaluated. It has been shown that the most probable process, which leads to the photoionization of Ce3+ ions in LiYxLu1-xF4:Ce3+ (x=0; 0,5; 1 and LiCaAlF6:Ce3+ crystals, is excited-state absorption to the states of mixed configurations of Ce3+ ions localized near/in the conduction band of crystal.

Confinement stabilises single crystal vaterite rods.

OpenAIRE

Schenk, AS; Albarracin, EJ; Kim, YY; Ihli, J; Meldrum, FC

2014-01-01

Single-crystals of vaterite, the least-stable anhydrous polymorph of CaCO3, are rare in biogenic and synthetic systems. We here describe the synthesis of high aspect ratio single crystal vaterite rods under additive-free conditions by precipitating CaCO3 within the cylindrical pores of track-etch membranes.

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals

Science.gov (United States)

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-11-01

The spectral properties and laser performance of Er:SrF2 single crystals were investigated and compared with Er:CaF2. Er:SrF2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er3+:4I11/2 level) than those of Er:CaF2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W.

Reshock and release response of aluminum single crystal

International Nuclear Information System (INIS)

Huang, H.; Asay, J. R.

2007-01-01

Reshock and release experiments were performed on single crystal aluminum along three orientations and on polycrystalline 1050 aluminum with 50 μm grain size at shock stresses of 13 and 21 GPa to investigate the mechanisms for previously observed quasielastic recompression behavior. Particle velocity profiles obtained during reshocking both single crystals and polycrystalline aluminum from initial shock stresses of 13-21 GPa show similar quasielastic recompression behavior. Quasielastic release response is also observed in all single crystals, but the magnitude of the effect is crystal orientation dependent, with [111] and [110] exhibiting more ideal elastic-plastic release for unloading from the shocked state than for the [100] orientation and polycrystalline aluminum. The quasielastic response of 1050 aluminum is intermediate to that of the [100] and [111] orientations. Comparison of the wave profiles obtained for both unloading and reloading of single crystals and polycrystalline 1050 aluminum from shocked states suggests that the observed quasielastic response of polycrystalline aluminum results from the averaging response of single crystals for shock propagation along different orientations, and that the response of 1050 aluminum with large grain boundaries is not significantly different from the results obtained on single crystal aluminum. The yield strength of the single crystals and 1050 aluminum is found to increase with shock stress, which is consistent with previous results [H. Huang and I. R. Asay, J. Appl. Phys. 98, 033524 (2005)

PIXE channeling for concentration and location measurements of Zn- and Cd-dopants in InP single crystals

International Nuclear Information System (INIS)

Vogt, J.; Krause, H.; Flagmeyer, R.; Otto, G.; Lux, M.

1993-01-01

We present results of the determination of Cd- and Zn-dopants in InP single crystals using the PIXE and RBS spectrometry at our 2 MeV Van de Graaff accelerator. The (100) oriented crystals were doped by thermodiffusion of Cd and Zn atoms. For concentration and localization measurements we used the ion-channeling technique and energy dispersive spectrometry of proton induced X-ray emission (PIXE). Angular scans of the K-lines of In, Cd and Zn were obtained. The strong In X-rays were attenuated by a rhodium foil in front of the low energy Ge detector. The PIXE-channeling results were compared with SIMS and Hall-effect measurements. (orig.)

Synthesis and characterization of lithium fluoride nano crystals doped with silver

International Nuclear Information System (INIS)

Rosario M, B. R.; Ramirez C, G.; Encarnacion E, E. K.; Sosa A, M. A.