WorldWideScience

Sample records for single crystal films

  1. Inkjet printing of single-crystal films.

    Science.gov (United States)

    Minemawari, Hiromi; Yamada, Toshikazu; Matsui, Hiroyuki; Tsutsumi, Jun'ya; Haas, Simon; Chiba, Ryosuke; Kumai, Reiji; Hasegawa, Tatsuo

    2011-07-13

    The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. 'Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4 cm(2) V(-1) s(-1). This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.

  2. Raman analysis of gold on WSe2 single crystal film

    International Nuclear Information System (INIS)

    Mukherjee, Bablu; Sun Leong, Wei; Li, Yida; Thong, John T L; Gong, Hao; Sun, Linfeng; Xiang Shen, Ze; Simsek, Ergun

    2015-01-01

    Synthesis and characterization of high-quality single-crystal tungsten diselenide (WSe 2 ) films on a highly insulating substrate is presented. We demonstrate for the first time that the presence of gold (Au) nanoparticles in the basal plane of a WSe 2 film can enhance its Raman scattering intensity. The experimentally observed enhancement ratio in the Raman signal correlates well with the simulated electric field intensity using both three-dimensional electromagnetic software and theoretical calculation considering layered medium coupled-dipole approximation (LM-CDA). This work serves as a guideline for the use of Au nanoparticles on WSe 2 single-crystal thin films for surface enhanced Raman scattering (SERS) applications in the future. (paper)

  3. Isotopically pure single crystal epitaxial diamond films and their preparation

    International Nuclear Information System (INIS)

    Banholzer, W.F.; Anthony, T.R.; Williams, D.M.

    1992-01-01

    The present invention is directed to the production of single crystal diamond consisting of isotopically pure carbon-12 or carbon-13. In the present invention, isotopically pure single crystal diamond is grown on a single crystal substrate directly from isotopically pure carbon-12 or carbon-13. One method for forming isotopically pure single crystal diamond comprises the steps of placing in a reaction chamber a single substrate heated to an elevated diamond forming temperature. Another method for forming isotopically pure single crystal diamond comprises diffusing isotopically pure carbon-12 or carbon-13 through a metallic catalyst under high pressure to a region containing a single crystal substrate to form an isotopically pure single crystal diamond layer on said single crystal substrate

  4. Precipitation of thin-film organic single crystals by a novel crystal growth method using electrospray and ionic liquid film

    Science.gov (United States)

    Ueda, Hiroyuki; Takeuchi, Keita; Kikuchi, Akihiko

    2018-04-01

    We report an organic single crystal growth technique, which uses a nonvolatile liquid thin film as a crystal growth field and supplies fine droplets containing solute from the surface of the liquid thin film uniformly and continuously by electrospray deposition. Here, we investigated the relationships between the solute concentration of the supplied solution and the morphology and size of precipitated crystals for four types of fluorescent organic low molecule material [tris(8-hydroxyquinoline)aluminum (Alq3), 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N‧-bis(3-methylphenyl)-N,N‧-diphenylbenzidine (TPD), and N,N-bis(naphthalene-1-yl)-N,N-diphenyl-benzidine (NPB)] using an ionic liquid as the nonvolatile liquid. As the concentration of the supplied solution decreased, the morphology of precipitated crystals changed from dendritic or leaf shape to platelike one. At the solution concentration of 0.1 mg/ml, relatively large platelike single crystals with a diagonal length of over 100 µm were obtained for all types of material. In the experiment using ionic liquid and dioctyl sebacate as nonvolatile liquids, it was confirmed that there is a clear positive correlation between the maximum volume of the precipitated single crystal and the solubility of solute under the same solution supply conditions.

  5. Ferrite Nanoparticles, Films, Single Crystals, and Metamaterials: High Frequency Applications

    International Nuclear Information System (INIS)

    Harris, V.

    2006-01-01

    Ferrite materials have long played an important role in power conditioning, conversion, and generation across a wide spectrum of frequencies (up to ten decades). They remain the preferred magnetic materials, having suitably low losses, for most applications above 1 MHz, and are the only viable materials for nonreciprocal magnetic microwave and millimeter-wave devices (including tunable filters, isolators, phase shifters, and circulators). Recently, novel processing techniques have led to a resurgence of research interest in the design and processing of ferrite materials as nanoparticles, films, single crystals, and metamaterials. These latest developments have set the stage for their use in emerging technologies that include cancer remediation therapies such as magnetohyperthermia, magnetic targeted drug delivery, and magneto-rheological fluids, as well as enhanced magnetic resonance imaging. With reduced dimensionality of nanoparticles and films, and the inherent nonequilibrium nature of many processing schemes, changes in local chemistry and structure have profound effects on the functional properties and performance of ferrites. In this lecture, we will explore these effects upon the fundamental magnetic and electronic properties of ferrites. Density functional theory will be applied to predict the properties of these ferrites, with synchrotron radiation techniques used to elucidate the chemical and structural short-range order. This approach will be extended to study the atomic design of ferrites by alternating target laser-ablation deposition. Recently, this approach has been shown to produce ferrites that offer attractive properties not found in conventionally grown ferrites. We will explore the latest research developments involving ferrites as related to microwave and millimeter-wave applications and the attempt to integrate these materials with semiconductor materials platforms

  6. Time-resolved luminescent spectroscopy of YAG:Ce single crystal and single crystalline films

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Savchyn, V.; Vozniak, T.; Puzikov, V.; Danko, A.; Nizhankovski, S.

    2010-01-01

    The peculiarities of the luminescence and energy transfer from YAG host to the emission centers formed by the Y Al antisite defects and Ce 3+ ions have been studied in YAG:Ce single crystals, grown from the melt by modified Bridgman method in Ar and CO 2 + H 2 atmospheres, and YAG:Ce single crystalline film, grown by liquid phase epitaxy method, using the comparative time-resolved luminescent spectroscopy under excitation by synchrotron radiation in the range of fundamental adsorption of this garnet.

  7. Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki; Kirino, Fumiyoshi

    2011-01-01

    Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110) fcc single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within ±0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.

  8. Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: ohtake@futamoto.elect.chuo-u.ac.jp [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

    2011-07-06

    Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110){sub fcc} single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within {+-}0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.

  9. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong; Ding, Yong; Li, Zhou; Song, Jinhui; Wang, Zhong Lin

    2009-01-01

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed

  10. UV detectors based on epitaxial diamond films grown on single-crystal diamond substrates by vapor-phase synthesis

    International Nuclear Information System (INIS)

    Sharonov, G.V.; Petrov, S.A.; Bol'shakov, A.P.; Ral'chenko, V.G.; Kazyuchits, N.M.

    2010-01-01

    The prospects for use of CVD-technology for epitaxial growth of single-crystal diamond films of instrumental quality in UHF plasma for the production of optoelectronic devices are discussed. A technology for processing diamond single crystals that provides a perfect surface crystal structure with roughness less than 0,5 nm was developed. It was demonstrated that selective UV detectors based on synthetic single-crystal diamond substrates coated with single-crystal films can be produced. A criterion for selecting clean and structurally perfect single crystals of synthetic diamond was developed for the epitaxial growth technology. (authors)

  11. single crystals

    Indian Academy of Sciences (India)

    2018-05-18

    May 18, 2018 ... Abstract. 4-Nitrobenzoic acid (4-NBA) single crystals were studied for their linear and nonlinear optical ... studies on the proper growth, linear and nonlinear optical ..... between the optic axes and optic sign of the biaxial crystal.

  12. Growth of n-alkane films on a single-crystal substrate

    DEFF Research Database (Denmark)

    Wu, Z. U.; Ehrlich, S. N.; Matthies, B.

    2001-01-01

    The structure and growth mode of alkane films (n-C/sub n/H/sub 2n+2/; n=4, 6, 7) adsorbed on a Ag(111) surface have been investigated by synchrotron X-ray scattering. New models are proposed for the butane (n=4) and hexane (n=6) monolayer and butane bilayer structures. Specular reflectivity scans...... reveal that growth of all films is preempted between two and three layers by nucleation of bulk particles oriented with a single bulk crystal plane parallel to the film. In the case of butane, the bulk particles also have a fixed azimuthal relationship with the film resulting in complete epitaxy....

  13. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong

    2009-02-05

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed in comparison with the growth of ZnO nanowires. The ZnO mesoporous film was successfully applied as a gas sensor. The fabrication and growth analysis of the mesoporous ZnO thin film gi ve general guidance for the controlled growth of nanostructures. It also pro vides a unique structure with a superhigh surface-to-volume ratio for surface-related applications. © 2009 American Chemical Society.

  14. The structure of ultrathin iron films on tungsten single-crystal surfaces

    International Nuclear Information System (INIS)

    Gardiner, T.M.

    1983-01-01

    Ultrathin iron films vapour deposited onto the surface of a cylindrical tungsten single crystal are discussed. Results from work function change, Auger electron spectroscopic and low energy electron diffraction techniques are combined for a comparison of the initial stages of film growth on four low index planes. Advantage is taken of the opportunity to evaporate onto and simultaneously to make measurements on all surface orientations of the zone. (Auth.)

  15. Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

    Science.gov (United States)

    Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

    2014-08-29

    Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

  16. Polarized Raman scattering study of PSN single crystals and epitaxial thin films

    Directory of Open Access Journals (Sweden)

    J. Pokorný

    2015-06-01

    Full Text Available This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc0.5Nb0.5O3 (PSN single crystals and epitaxially compressed thin films grown on (100-oriented MgO substrates. It is found that there are significant differences between the properties of the crystals and films, and that these differences can be attributed to the anticipated structural differences between these two forms of the same material. In particular, the scattering characteristics of the oxygen octahedra breathing mode near 810 cm-1 indicate a ferroelectric state for the crystals and a relaxor state for the films, which is consistent with the dielectric behaviors of these materials.

  17. Measurement of positron reemission from thin single-crystal W(100) films

    International Nuclear Information System (INIS)

    Chen, D.M.; Lynn, K.G.; Pareja, R.; Nielsen, B.

    1985-01-01

    Epitaxial thin single-crystal (100) tungsten films 1000, 2500, and 5000 A thick have been fabricated by high-vacuum electron-beam evaporation. These films were subsequently used as thin-film moderators for the study of the positron-transmission-reemission process with a variable-energy (0--80 keV) monoenergetic positron beam in an ultrahigh-vacuum system. The films were shown to be routinely cleanable by heating first in oxygen (10 -6 Torr) and then in vacuum (10 -9 Torr). Transmission and back reemission of slow positrons from these surfaces was observed. The positron work function, phi/sub +/ has been determined to be approx. =3.0 eV ( +- 0.3 eV). The transmission slow positrons were emitted in a narrow cone with a full width at half maximum of approx. =30 0 consistent with the angular distribution of back-reemission positrons. The reemitted yields as a function of incident positron energy were found to be very different between forward reemission and back reemission. The maximum forward-reemission yields were 18% for 1000-A-thick W film and 12% for 2500-A-thick W film at 5 and 10 keV optimum incident positron energies, respectively. These results show that one can use thin single-crystal tungsten films as positron moderators or remoderators

  18. Perovskite single crystals and thin films for optoelectronic devices (Conference Presentation)

    Science.gov (United States)

    Li, Gang; Han, Qifeng; Yang, Yang; Bae, Sang-Hoon; Sun, Pengyu

    2016-09-01

    Hybrid organolead trihalide perovskite (OTP) solar cells have developed as a promising candidate in photovoltaics due to their excellent properties including a direct bandgap, strong absorption coefficient, long carrier lifetime, and high mobility. Most recently, formamidinium (NH2CH=NH2+ or FA) lead iodide (FAPbI3) has attracted significant attention due to several advantages: (1) the larger organic FA cation can replace the MA cation and form a more symmetric crystal structure, (2) the smaller bandgap of FAPbI3 allows for near infrared (NIR) absorption, and (3) FAPbI3 has an elevated decomposition temperature and thus potential to improve stability. Single crystals provide an excellent model system to study the intrinsic electrical and optical properties of these materials due to their high purity, which is particularly important to understand the limits of these materials. In this work, we report the growth of large ( 5 millimeter size) single crystal FAPbI3 using a novel liquid based crystallization method. The single crystal FAPbI3 demonstrated a δ-phase to α-phase transition with a color change from yellow to black when heated to 185°C within approximately two minutes. The crystal structures of the two phases were identified and the PL emission peak of the α-phase FAPbI3 (820 nm) shows clear red-shift compared to the FAPbI3 thin film (805 nm). The FAPbI3 single crystal shows a long carrier lifetime of 484 ns, a high carrier mobility of 4.4 cm2·V-1·s-1, and even more interestingly a conductivity of 1.1 × 10-7(ohm·cm)-1, which is approximately one order of magnitude higher than that of the MAPbI3 single crystal. Finally, high performance photoconductivity type photodetectors were successfully demonstrated using the single crystal FAPbI3.

  19. Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer

    Science.gov (United States)

    Lu, Zonghuan; Sun, Xin; Washington, Morris A.; Lu, Toh-Ming

    2018-03-01

    Quasi van der Waals epitaxial growth of face-centered cubic Cu (~100 nm) thin films on single-crystal monolayer graphene is demonstrated using thermal evaporation at an elevated substrate temperature of 250 °C. The single-crystal graphene was transferred to amorphous (glass) and crystalline (quartz) SiO2 substrates for epitaxy study. Raman analysis showed that the thermal evaporation method had minimal damage to the graphene lattice during the Cu deposition. X-ray diffraction and electron backscatter diffraction analyses revealed that both Cu films are single-crystal with (1 1 1) out-of-plane orientation and in-plane Σ3 twin domains of 60° rotation. The crystallinity of the SiO2 substrates has a negligible effect on the Cu crystal orientation during the epitaxial growth, implying the strong screening effect of graphene. We also demonstrate the epitaxial growth of polycrystalline Cu on a commercial polycrystalline monolayer graphene consisting of two orientation domains offset 30° to each other. It confirms that the crystal orientation of the epitaxial Cu film follows that of graphene, i.e. the Cu film consists of two orientation domains offset 30° to each other when deposited on polycrystalline graphene. Finally, on the contrary to the report in the literature, we show that the direct current and radio frequency flip sputtering method causes significant damage to the graphene lattice during the Cu deposition process, and therefore neither is a suitable method for Cu epitaxial growth on graphene.

  20. Growth Rate and Morphology of a Single Calcium Carbonate Crystal on Polysulfone Film Measured with Time Lapse Raman Micro Spectroscopy

    NARCIS (Netherlands)

    Liszka, B.; Lenferink, Aufrid T.M.; Otto, Cornelis

    2016-01-01

    The growth of single, self- nucleated calcium carbonate crystals on a polysulfone (PSU) film was investigated with high resolution, time lapse Raman imaging. The Raman images were acquired on the interface of the polymer with the crystal. The growth of crystals could thus be followed in time. PSU is

  1. Studies of Second Order Optical Nonlinearities of 4-Aminobenzophenone (ABP) Single Crystal Films

    Science.gov (United States)

    Bhowmik, Achintya; Thakur, Mrinal

    1998-03-01

    Specific organic materials exhibit very high second order optical susceptibilities. Growth of single crystal films of these materials and characterization of nonlinear optical properties are necessary for implementation of device applications. We have grown large-area films ( 1 cm^2 area, 4 μm thick) of ABP by a modification of the shear method. Single crystal nature of the films was confirmed by polarized optical microscopy. X-ray diffraction analysis showed a [100] surface orientation. The absorption spectra revealed transparency from 390 nm to 1940 nm. Significant elements of the second order optical susceptibility tensor were measured by detailed SHG experiments using a Nd:YAG laser (1064 nm, 100 ps, 82 MHz). Second-harmonic power was measured using lock-in detection with carefully selected polarization conditions while the film was rotated about the propagation direction. Using LiNbØas the reference, d-coefficients of ABP were found to be d_23=7.2 pm/V and d_22=0.7 pm/V. Type-I and type-II phase-matching directions were identified on the film by analyzing the optical indicatrix surfaces at fundamental and second-harmonic frequencies.

  2. Growth of Ba-hexaferrite films on single crystal 6-H SiC

    International Nuclear Information System (INIS)

    Chen Zhoahui; Yang, Aria; Yoon, S.D.; Ziemer, Katherine; Vittoria, Carmine; Harris, V.G.

    2006-01-01

    Barium hexaferrite films have been processed by pulsed laser deposition on single crystal 6-H silicon carbide substrates. Atomic force microscopy images show hexagonal crystals (∼0.5μm in diameter) oriented with the c-axis perpendicular to the film plane. X-ray θ-2θ diffraction measurements indicate a strong (0,0,2n) alignment of crystallites. The magnetization for low-pressure deposition (20mTorr) is comparable to bulk values (4πM s ∼4320G). The loop squareness, important for self-bias microwave device applications, increases with oxygen pressure reaching a maximum value of 70%. This marks the first growth of a microwave ferrite on SiC substrates and offers a new approach in the design and development of μ-wave and mm-wave monolithic integrated circuits. c integrated circuits

  3. Giant coercivity in ferromagnetic Co doped ZnO single crystal thin film

    International Nuclear Information System (INIS)

    Loukya, B.; Negi, D.S.; Dileep, K.; Kumar, N.; Ghatak, Jay; Datta, R.

    2013-01-01

    The origin of ferromagnetism in ZnO doped with transition metal impurities has been discussed extensively and appeared to be a highly controversial and challenging topic in today's solid state physics. Magnetism observed in this system is generally weak and soft. We have grown Co:ZnO up to 30 at% Co in single crystal thin film form on c-plane sapphire. A composition dependent coercivity is observed in this system which reaches peak value at 25 at% Co, the values are 860 Oe and 1149 Oe with applied field along parallel and perpendicular to the film substrate interface respectively. This giant coercivity might pave the way to exploit this material as a magnetic semiconductor with novel logic functionalities. The findings are explained based on defect band itinerant ferromagnetism and its partial interaction with localized d electrons of Co through charge transfer. Besides large coercivity, an increase in the band gap with Co concentration has also been observed along with blue emission peak with long tail confirming the formation of extended point defect levels in the host lattice band gap. - Highlights: • Co doped ZnO ferromagnetic single crystal thin film. • Giant coercivity in Co:ZnO thin film which may help to turn this material into application. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations. • A theoretical proposal is made to explain the observed giant coercivity

  4. Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O(3)-PZT thin films.

    Science.gov (United States)

    Wasa, Kiyotaka; Adachi, Hideaki; Nishida, Ken; Yamamoto, Takashi; Matsushima, Tomoaki; Kanno, Isaku; Kotera, Hidetoshi

    2012-01-01

    In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, ξPb(Mn,Nb)O3-(1 - ξ)PZT, were grown on SrRuO(3)/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec > 180 kV/cm, large remanent polarization, P(r) = 100 μC/cm(2), small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600 °C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m(2) for PZT(48/52) at ξ = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS. © 2012 IEEE

  5. Characteristic electron energy loss in lanthanum films adsorbed on tungsten (110) single crystal

    International Nuclear Information System (INIS)

    Gorodetskij, D.A.; Gorchinskij, A.D.; Kobylyanskij, A.V.

    1988-01-01

    The spectrum of electron energy loss (ELS) in a wide range of energy loss 0-150 eV has been studied for La films adsorbed on W(110) single crystal with the coverage Θ from submonolayer to a few monolayers. The concentration dependence of loss energy peaks amplitude of different nature has been studied for the adsorption of rare earth element on refractory substrate. It has been shown that the essential information for the interpretation of the energy loss nature may be obtained by the investigation of such dependences for La adsorption on W(110). It is found that the surface and bulk plasmons peaks appear in ELS of La-W(110) system before the completion of the physical monolayer. Thus, the collectivization of valence electrons in the rare earth element film at the transition metal surface ensues for the submonolayer coverage like in the case of collective processes in alkali and alkaline earth element films

  6. Effect of annealing ambient on anisotropic retraction of film edges during solid-state dewetting of thin single crystal films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Gye Hyun; Thompson, Carl V., E-mail: cthomp@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 01239 (United States); Ma, Wen [Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 01239 (United States); Yildiz, Bilge [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 01239 (United States); Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 01239 (United States)

    2016-08-21

    During solid-state dewetting of thin single crystal films, film edges retract at a rate that is strongly dependent on their crystallographic orientations. Edges with kinetically stable in-plane orientations remain straight as they retract, while those with other in-plane orientations develop in-plane facets as they retract. Kinetically stable edges have retraction rates that are lower than edges with other orientations and thus determine the shape of the natural holes that form during solid-state dewetting. In this paper, measurements of the retraction rates of kinetically stable edges for single crystal (110) and (100) Ni films on MgO are presented. Relative retraction rates of kinetically stable edges with different crystallographic orientations are observed to change under different annealing conditions, and this accordingly changes the initial shapes of growing holes. The surfaces of (110) and (100) films were also characterized using low energy electron diffraction, and different surface reconstructions were observed under different ambient conditions. The observed surface structures were found to correlate with the observed changes in the relative retraction rates of the kinetically stable edges.

  7. Surface structure of ultrathin metal films deposited on copper single crystals

    International Nuclear Information System (INIS)

    Butterfield, M.T.

    2000-04-01

    Ultrathin films of Cobalt, Iron and Manganese have been thermally evaporated onto an fcc Copper (111) single crystal substrate and investigated using a variety of surface structural techniques. The small lattice mismatch between these metals and the Cu (111) substrate make them an ideal candidate for the study of the phenomena of pseudomorphic film growth. This is important for the understanding of the close relationship between film structure and magnetic properties. Growing films with the structure of their substrate rather than their bulk phase may provide an opportunity to grow materials with novel physical and magnetic properties, and hence new technological applications. Both Cobalt and Iron have been found to initially maintain a registry with the fcc Cu (111) surface in a manner consistent with pseudomorphic growth. This growth is complicated by island rather than layer by layer growth in the initials stages of the film. In both cases a change in the structure of the film seems to occur at a point where the coalescence of islands in the film may be expected to occur. When the film does change structure they do not form a perfect overlayer with the structure of their bulk counterpart. The films do contain a number of features representative of the bulk phase but also contain considerable disorder and possibly remnants of fcc (111) structure. The order present in these films can be greatly improved by annealing. Manganese appears to grow with an fcc Mn (111) lattice spacing and there is no sign of a change in structure in films of up to 4.61 ML thick. The gradual deposition and annealing of a film to 300 deg. C, with a total deposition time the same as that for a 1 ML thick film, causes a surface reconstruction to occur that is apparent in a R30 deg. (√3 x √3) LEED pattern. This is attributed to the formation of a surface alloy, which is also supported by the local expansion of the Cu lattice in the (111) direction. (author)

  8. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  9. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

  10. Comparative study of broadband electrodynamic properties of single-crystal and thin-film strontium titanate

    International Nuclear Information System (INIS)

    Findikoglu, A. T.; Jia, Q. X.; Kwon, C.; Reagor, D. W.; Kaduchak, G.; Rasmussen, K. Oe.; Bishop, A. R.

    1999-01-01

    We have used a coplanar waveguide structure to study broadband electrodynamic properties of single-crystal and thin-film strontium titanate. We have incorporated both time- and frequency-domain measurements to determine small-signal effective refractive index and loss tangent as functions of frequency (up to 4 GHz), dc bias (up to 10 6 V/m), and cryogenic temperature (17 and 60 K). The large-signal impulse response of the devices and the associated phenomenological nonlinear wave equation illustrate how dissipation and nonlinearity combine to produce the overall response in the large-signal regime. (c) 1999 American Institute of Physics

  11. Preparation of metastable bcc permalloy epitaxial thin films on GaAs(011){sub B3} single-crystal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ohtake, Mitsuru, E-mail: ohtake@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Higuchi, Jumpei; Yabuhara, Osamu [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan); Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)

    2011-09-30

    Permalloy (Py) single-crystal films with bcc structure were obtained on GaAs(011){sub B3} single-crystal substrates by ultra high vacuum rf magnetron sputtering. The film growth and the detailed film structures were investigated by refection high energy electron diffraction and pole figure X-ray diffraction. bcc-Py films epitaxially grow on the substrates in the orientation relationship of Py(011)[011-bar]{sub bcc} || GaAs(011)[011-bar]{sub B3}. The lattice constant of bcc-Py film is determined to be a = 0.291 nm. With increasing the film thickness, parts of the bcc crystal transform into more stable fcc structure by atomic displacement parallel to the bcc{l_brace}011{r_brace} close-packed planes. The resulting film thus consists of a mixture of bcc and fcc crystals. The phase transformation mechanism is discussed based on the experimental results. The in-plane magnetization properties reflecting the magnetocrystalline anisotropy of bcc-Py crystal are observed for the Py films grown on GaAs(011){sub B3} substrates.

  12. Preparation of metastable bcc permalloy epitaxial thin films on GaAs(011)B3 single-crystal substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Higuchi, Jumpei; Yabuhara, Osamu; Kirino, Fumiyoshi; Futamoto, Masaaki

    2011-01-01

    Permalloy (Py) single-crystal films with bcc structure were obtained on GaAs(011) B3 single-crystal substrates by ultra high vacuum rf magnetron sputtering. The film growth and the detailed film structures were investigated by refection high energy electron diffraction and pole figure X-ray diffraction. bcc-Py films epitaxially grow on the substrates in the orientation relationship of Py(011)[011-bar] bcc || GaAs(011)[011-bar] B3 . The lattice constant of bcc-Py film is determined to be a = 0.291 nm. With increasing the film thickness, parts of the bcc crystal transform into more stable fcc structure by atomic displacement parallel to the bcc{011} close-packed planes. The resulting film thus consists of a mixture of bcc and fcc crystals. The phase transformation mechanism is discussed based on the experimental results. The in-plane magnetization properties reflecting the magnetocrystalline anisotropy of bcc-Py crystal are observed for the Py films grown on GaAs(011) B3 substrates.

  13. X-ray beam monitor made by thin-film CVD single-crystal diamond.

    Science.gov (United States)

    Marinelli, Marco; Milani, E; Prestopino, G; Verona, C; Verona-Rinati, G; Angelone, M; Pillon, M; Kachkanov, V; Tartoni, N; Benetti, M; Cannatà, D; Di Pietrantonio, F

    2012-11-01

    A novel beam position monitor, operated at zero bias voltage, based on high-quality chemical-vapor-deposition single-crystal Schottky diamond for use under intense synchrotron X-ray beams was fabricated and tested. The total thickness of the diamond thin-film beam monitor is about 60 µm. The diamond beam monitor was inserted in the B16 beamline of the Diamond Light Source synchrotron in Harwell (UK). The device was characterized under monochromatic high-flux X-ray beams from 6 to 20 keV and a micro-focused 10 keV beam with a spot size of approximately 2 µm × 3 µm square. Time response, linearity and position sensitivity were investigated. Device response uniformity was measured by a raster scan of the diamond surface with the micro-focused beam. Transmissivity and spectral responsivity versus beam energy were also measured, showing excellent performance of the new thin-film single-crystal diamond beam monitor.

  14. Positron reemission: measurement of thin single crystal W(100) films to be used as transmission moderator or re-moderators

    International Nuclear Information System (INIS)

    Chen, D.M.; Lynn, K.G.; Pareja, R.; Nielsen, B.

    1984-11-01

    It has been shown that one can produce thin single crystal W films capable of reemitting positrons at a sufficiently high fraction to be used either as a moderator or as a re-moderator. Both the impurities and the defects could be removed by the appropriate cleaning and annealing procedures, and narrow beam emission could be attained when the films were cleaned. This technique would also be a good method for characterizing defect concentration at interfaces or in thin films

  15. Single-crystal films of a combination of materials (co-crystal) involving DAST and IR-125 for electro-optic applications

    Science.gov (United States)

    Narayanan, A.; Titus, J.; Rajagopalan, H.; Vippa, P.; Thakur, M.

    2006-03-01

    Single-crystal film of DAST (4'-dimethylamino-N-methyl-4-stilbazolium tosylate) has been shown [1] to have exceptionally large electro-optic coefficients (r11 ˜ 770 pm/V at 633 nm). In this report, single crystal film of a combination of materials (co-crystal) involving DAST and a dye molecule IR-125 will be discussed. Modified shear method was used to prepare the co-crystal films. The film has been characterized using polarized optical microscopy, optical absorption spectroscopy and x-ray diffraction. The optical absorption spectrum has two major bands: one at about 350--600 nm corresponding to DAST and the other at about 600-900 nm corresponding to IR-125. The x-ray diffraction results show peaks involving the presence of DAST and IR-125 within the co-crystal film. Since the co-crystal has strong absorption at longer wavelengths it is expected to show higher electro-optic coefficients at longer wavelengths. Preliminary measurements at 1.55 μm indicate a high electro-optic coefficient of the co-crystal film. [1] Swamy, Kutty, Titus, Khatavkar, Thakur, Appl. Phys. Lett. 2004, 85, 4025; Kutty, Thakur, Appl. Phys. Lett. 2005, 87, 191111.

  16. A coupled atomistics and discrete dislocation plasticity simulation of nanoindentation into single crystal thin films

    International Nuclear Information System (INIS)

    Miller, Ronald E.; Shilkrot, L.E.; Curtin, William A.

    2004-01-01

    The phenomenon of 2D nanoindentation of circular 'Brinell' indenter into a single crystal metal thin film bonded to a rigid substrate is investigated. The simulation method is the coupled atomistics and discrete dislocation (CADD) model recently developed by the authors. The CADD model couples a continuum region containing any number of discrete dislocations to an atomistic region, and permits accurate, automatic detection and passing of dislocations between the atomistic and continuum regions. The CADD model allows for a detailed study of nanoindentation to large penetration depths (up to 60 A here) using only a small region of atoms just underneath the indenter where dislocation nucleation, cross-slip, and annihilation occur. Indentation of a model hexagonal aluminum crystal shows: (i) the onset of homogeneous dislocation nucleation at points away from the points of maximum resolved shear stress; (ii) size-dependence of the material hardness, (iii) the role of dislocation dissociation on deformation; (iv) reverse plasticity, including nucleation of dislocations on unloading and annihilation; (v) permanent deformation, including surface uplift, after full unloading; (vi) the effects of film thickness on the load-displacement response; and (vii) the differences between displacement and force controlled loading. This application demonstrates the power of the CADD method in capturing both long-range dislocation plasticity and short-range atomistic phenomena. The use of CADD permits for a clear study of the physical and mechanical influence of both complex plastic flow and non-continuum atomistic-level processes on the macroscopic response of material under indentation loading

  17. Preparation and structural characterization of FeCo epitaxial thin films on insulating single-crystal substrates

    International Nuclear Information System (INIS)

    Nishiyama, Tsutomu; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    FeCo epitaxial films were prepared on MgO(111), SrTiO 3 (111), and Al 2 O 3 (0001) single-crystal substrates by ultrahigh vacuum molecular beam epitaxy. The effects of insulating substrate material on the film growth process and the structures were investigated. FeCo(110) bcc films grow on MgO substrates with two type domains, Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS) relationships. On the contrary, FeCo films grown on SrTiO 3 and Al 2 O 3 substrates include FeCo(111) bcc crystal in addition to the FeCo(110) bcc crystals with NW and KS relationships. The FeCo(111) bcc crystal consists of two type domains whose orientations are rotated around the film normal by 180 deg. each other. The out-of-plane and the in-plane lattice spacings of FeCo(110) bcc and FeCo(111) bcc crystals formed on the insulating substrates are in agreement with those of the bulk Fe 50 Co 50 (at. %) crystal with small errors ranging between +0.2% and +0.4%, showing that the strains in the epitaxial films are very small.

  18. Organic Single-Crystal Semiconductor Films on a Millimeter Domain Scale.

    Science.gov (United States)

    Kwon, Sooncheol; Kim, Jehan; Kim, Geunjin; Yu, Kilho; Jo, Yong-Ryun; Kim, Bong-Joong; Kim, Junghwan; Kang, Hongkyu; Park, Byoungwook; Lee, Kwanghee

    2015-11-18

    Nucleation and growth processes can be effectively controlled in organic semiconductor films through a new concept of template-mediated molecular crystal seeds during the phase transition; the effective control of these processes ensures millimeter-scale crystal domains, as well as the performance of the resulting organic films with intrinsic hole mobility of 18 cm(2) V(-1) s(-1). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Formation of SmFe5(0001) ordered alloy thin films on Cu(111) single-crystal underlayers

    International Nuclear Information System (INIS)

    Yabuhara, Osamu; Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    SmFe 5 (0001) single-crystal thin films are prepared by molecular beam epitaxy employing Cu(111) single-crystal underlayers on MgO(111) substrates. The Cu atoms diffuse into the Sm-Fe layer and substitute the Fe sites in SmFe 5 structure forming an alloy compound of Sm(Fe,Cu) 5 . The Sm(Fe,Cu) 5 film is more Cu enriched with increasing the substrate temperature. The Cu underlayer plays an important role in assisting the formation of the ordered phase.

  20. Formation of SmFe{sub 5}(0001) ordered alloy thin films on Cu(111) single-crystal underlayers

    Energy Technology Data Exchange (ETDEWEB)

    Yabuhara, Osamu; Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: yabuhara@futamoto.elect.chuo-u.ac.j [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

    2010-01-01

    SmFe{sub 5}(0001) single-crystal thin films are prepared by molecular beam epitaxy employing Cu(111) single-crystal underlayers on MgO(111) substrates. The Cu atoms diffuse into the Sm-Fe layer and substitute the Fe sites in SmFe{sub 5} structure forming an alloy compound of Sm(Fe,Cu){sub 5}. The Sm(Fe,Cu){sub 5} film is more Cu enriched with increasing the substrate temperature. The Cu underlayer plays an important role in assisting the formation of the ordered phase.

  1. Preparation of hcp-Ni(112-bar 0) epitaxial thin films on Au(100) single-crystal underlayers

    Energy Technology Data Exchange (ETDEWEB)

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: ohtake@futamoto.elect.chuo-u.ac.j [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

    2010-01-01

    Ni epitaxial films with an hcp structure are successfully obtained on Au(100) single-crystal underlayers formed on MgO(100) substrates at temperatures lower than 300 {sup 0}C by molecular beam epitaxy. With increasing the substrate temperature, the volume ratio of more stable fcc phase inc{sub r}eases in the film. The Ni film prepared at 100 {sup 0}C consists primarily of hcp crystal with the (112-bar 0) plane parallel to the substrate surface coexisting with a small amount of fcc-Ni(100) crystal. The lattice constant of hcp-Ni crystal is determined as a = 0.249 nm, c = 0.398 nm, and c/a = 1.60.

  2. Preparation of hcp-Ni(112-bar 0) epitaxial thin films on Au(100) single-crystal underlayers

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    Ni epitaxial films with an hcp structure are successfully obtained on Au(100) single-crystal underlayers formed on MgO(100) substrates at temperatures lower than 300 0 C by molecular beam epitaxy. With increasing the substrate temperature, the volume ratio of more stable fcc phase inc r eases in the film. The Ni film prepared at 100 0 C consists primarily of hcp crystal with the (112-bar 0) plane parallel to the substrate surface coexisting with a small amount of fcc-Ni(100) crystal. The lattice constant of hcp-Ni crystal is determined as a = 0.249 nm, c = 0.398 nm, and c/a = 1.60.

  3. Epitaxial growth of fcc-CoxNi100-x thin films on MgO(110) single-crystal substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    Co x Ni 100-x (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co x Ni 100-x film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co x Ni 100-x films are in agreement within ±0.5% with the values of the respective bulk Co x Ni 100-x crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110) fcc film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

  4. Microstructure of Co(112-bar 0) epitaxial thin films, grown on MgO(100) single-crystal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nukaga, Yuri; Ohtake, Mitsuru; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: nukaga@futamoto.elect.chuo-u.ac.j [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

    2010-01-01

    Co(112-bar 0) epitaxial thin films with hcp structure were prepared on MgO(100) single-crystal substrates heated at 300 {sup 0}C by ultra high vacuum molecular beam epitaxy. The microstructure is investigated by employing X-ray diffraction and high-resolution transmission electron microscopy. The film consists of two types of domains whose c-axes are rotated around the film normal by 90{sup 0} each other. Stacking faults are observed for the film along the Co[0001] direction. An atomically sharp boundary is recognized between the film and the substrate, where some misfit dislocations are introduced in the film at the Co/MgO interface. Dislocations are also observed in the film up to 15 nm thickness from the interface. Presence of such stacking faults and misfit dislocations seem to relieve the strain caused by the lattice mismatch between the film and the substrate. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the film are in agreement within 0.5% and 0.1%, respectively, with those of the bulk hcp-Co crystal, suggesting the strain in the film is very small.

  5. Microstructure of Co(112-bar 0) epitaxial thin films, grown on MgO(100) single-crystal substrates

    International Nuclear Information System (INIS)

    Nukaga, Yuri; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    Co(112-bar 0) epitaxial thin films with hcp structure were prepared on MgO(100) single-crystal substrates heated at 300 0 C by ultra high vacuum molecular beam epitaxy. The microstructure is investigated by employing X-ray diffraction and high-resolution transmission electron microscopy. The film consists of two types of domains whose c-axes are rotated around the film normal by 90 0 each other. Stacking faults are observed for the film along the Co[0001] direction. An atomically sharp boundary is recognized between the film and the substrate, where some misfit dislocations are introduced in the film at the Co/MgO interface. Dislocations are also observed in the film up to 15 nm thickness from the interface. Presence of such stacking faults and misfit dislocations seem to relieve the strain caused by the lattice mismatch between the film and the substrate. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the film are in agreement within 0.5% and 0.1%, respectively, with those of the bulk hcp-Co crystal, suggesting the strain in the film is very small.

  6. Self-supporting film method of silicon single crystal by ion implantation and it`s application

    Energy Technology Data Exchange (ETDEWEB)

    Saito, Kazuo; Nakao, Setsuo; Niwa, Hiroaki; Miyagawa, Soji [National Industrial Research Inst. of Nagoya (Japan)

    1996-12-01

    A few {mu}m of thickness of self-supporting film of silicon single crystal was produced by the ion implantation and the selective etching. This materials are distinguished by a uniform film thickness, good controllability, crystallization and the mechanical strength. For applying it to device, the detailed process has to be established, because there are some improved problems such as pinhole and morphology on the surface. This materials are very useful to the basic experiment of the base for epitaxial growth under irradiation of ion beams and the ion beam analysis in the atmosphere. (S.Y.)

  7. van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

    Science.gov (United States)

    Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

    2018-03-01

    Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

  8. Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

    International Nuclear Information System (INIS)

    Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe 50 Co 50 alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal

  9. Single-pulse and burst-mode ablation of gold films measured by quartz crystal microbalance

    Science.gov (United States)

    Andrusyak, Oleksiy G.; Bubelnik, Matthew; Mares, Jeremy; McGovern, Theresa; Siders, Craig W.

    2005-02-01

    Femtosecond ablation has several distinct advantages: the threshold energy fluence for the onset of damage and ablation is orders of magnitude less than for traditional nanosecond laser machining, and by virtue of the rapid material removal of approximately an optical penetration depth per pulse, femtosecond machined cuts can be cleaner and more precise than those made with traditional nanosecond or longer pulse lasers. However, in many materials of interest, especially metals, this limits ablation rates to 10-100 nm/pulse. We present the results of using multiple pulse bursts to significantly increase the per-burst ablation rate compared to a single pulse with the same integrated energy, while keeping the peak intensity of each individual pulse below the air ionization limit. Femtosecond ablation with pulses centered at 800-nm having integrated energy of up to 30 mJ per pulse incident upon thin gold films was measured via resonance frequency shifts in a gold-electrode-coated quartz-crystal oscillator. Measurements were performed using Michelson-interferometer-based burst generators, with up to 2 ns pulse separations, as well as pulse shaping by programmable acousto-optic dispersive filter (Dazzler from FastLite) with up to 2 ps pulse separations.

  10. Fabrication and analysis of single-crystal KTiOPO₄ films with thicknesses in the micrometer range.

    Science.gov (United States)

    Ma, Changdong; Lu, Fei; Xu, Bo; Fan, Ranran

    2016-02-01

    Single-crystal potassium titanyl phosphate (KTiOPO4, KTP) films with thicknesses less than 5 μm are obtained by using helium (He) implantation combined with ion-beam-enhanced etching. A heavily damaged layer created by a 4×10(16)  cm(-2) fluence of 2 MeV He implantation is removed by means of wet chemical etching in hydrofluoric acid (HF). Thus, free-standing films of KTP with thicknesses in the range of 3-5 μm are obtained. The etching rate can be adjusted over a wide range by choosing temperature and HF concentration, as well as annealing conditions. Sharp etching edges and the smooth surface of the film indicate that a high selective-etching rate is achieved in the damaged layer, and the remaining part of the crystal is undamaged. X-ray and Raman-scattering results prove that KTP films have good single-crystal properties.

  11. Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method

    Science.gov (United States)

    Kashiwaba, Y.; Tanaka, Y.; Sakuma, M.; Abe, T.; Imai, Y.; Kawasaki, K.; Nakagawa, A.; Niikura, I.; Kashiwaba, Y.; Osada, H.

    2018-04-01

    Preparation of non-polar ZnO ( 11\\overline{2} 0 ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films strongly depend on the working pressure. Characteristics of ZnO films deposited on single-crystal NGO (001) substrates were compared with those of ZnO films deposited on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. An x-ray diffraction peak of the ZnO ( 11\\overline{2} 0 ) plane was observed on ZnO films deposited on single-crystal NGO (001) substrates under working pressure of less than 0.5 Pa. On the other hand, uniaxially oriented ZnO ( 11\\overline{2} 0 ) films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates were observed under working pressure of 0.1 Pa. The mechanism by which the diffraction angle of the ZnO ( 11\\overline{2} 0 ) plane on single-crystal NGO (001) substrates was shifted is discussed on the basis of anisotropic stress of lattice mismatch. The deposition rate of ZnO films decreased with an increase in working pressure, and the deposition rate on single-crystal NGO (001) substrates was larger than that on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. Root mean square (RMS) roughness of ZnO films increased with an increase in working pressure, and RMS roughness of ZnO films on single-crystal NGO (001) substrates was smaller than that of ZnO films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates even though the film thickness on single-crystal NGO (001) substrates was greater than that on sapphire substrates. It is thought that a single-crystal NGO (001) substrate is useful for deposition of non-polar ZnO ( 11\\overline{2} 0 ) films.

  12. Manufacture of Bi-cuprate thin films on MgO single crystal substrates by chemical solution deposition

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Bertelsen, Christian Vinther; Andersen, Niels Hessel

    2014-01-01

    Bi2Sr2CaCu2O8 thin films have been deposited on MgO single crystal substrates by spin-coating a solution based on 2-ethylhexanoate precursors dissolved in xylene. Pyrolysis takes place between 200°C and 450°C and is accompanied by the release of 2-ethylhexanoic acid, CO2 and H2O vapour. Highly c...

  13. Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn; Shen, Shanshan; Xu, Jun; Wang, Jing, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn [Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2016-06-15

    Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

  14. Single-crystal-like GdNdOx thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

    Directory of Open Access Journals (Sweden)

    Ziwei Wang

    2016-06-01

    Full Text Available Single-crystal-like rare earth oxide thin films on silicon (Si substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdOx (GNO film was deposited using a high-temperature sputtering process at 500°C. A Gd2O3 and Nd2O3 mixture was used as the sputtering target, in which the proportions of Gd2O3 and Nd2O3 were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

  15. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  16. Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Lina [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu, Shuang, E-mail: shuangliu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Falco, Charles M. [University of Arizona, College of Optical Sciences, AZ 85721 (United States)

    2016-10-30

    Highlights: • We obtained the desired micro-columnar structure of CsI(Tl) films on the orienting Si substrates. • We improved the micro-columnar structure of CsI(Tl) films under the relatively large deposition rate through using the substrate with a pre-deposited CsI nanolayer. • We modeled the interface structures between the CsI(Tl) films with (200) and (310) orientation and Si(111) substrates to explain the preferred orientation of film under the influence of the orienting substrate significantly. • We gained a new spectrum of the CsI(Tl) films peaked at 740 nm wavelength. - Abstract: CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

  17. Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

    International Nuclear Information System (INIS)

    Guo, Lina; Liu, Shuang; Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong; Falco, Charles M.

    2016-01-01

    Highlights: • We obtained the desired micro-columnar structure of CsI(Tl) films on the orienting Si substrates. • We improved the micro-columnar structure of CsI(Tl) films under the relatively large deposition rate through using the substrate with a pre-deposited CsI nanolayer. • We modeled the interface structures between the CsI(Tl) films with (200) and (310) orientation and Si(111) substrates to explain the preferred orientation of film under the influence of the orienting substrate significantly. • We gained a new spectrum of the CsI(Tl) films peaked at 740 nm wavelength. - Abstract: CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

  18. Antiphase inversion domains in lithium cobaltite thin films deposited on single-crystal sapphire substrates

    International Nuclear Information System (INIS)

    Zheng, S.J.; Fisher, C.A.J.; Hitosugi, T.; Kumatani, A.; Shiraki, S.; Ikuhara, Y.H.; Kuwabara, A.; Moriwake, H.; Oki, H.; Ikuhara, Y.

    2013-01-01

    Antiphase inversion domains in LiCoO 2 thin films prepared by pulsed laser deposition on sapphire single-crystal substrates are analyzed using a combination of (scanning) transmission electron microscopy and first-principles calculations. Domains form epitaxially on the substrates with orientation relationships of [112 ¯ 0] LiCoO 2 (0001) LiCoO 2 //[11 ¯ 00] α-Al 2 O 3 (0001) α-Al 2 O 3 and [1 ¯ 1 ¯ 20] LiCoO 2 (0001) LiCoO 2 //[11 ¯ 00] α-Al 2 O 3 (0001) α-Al 2 O 3 . In addition, substrate/film interfaces with the above orientation relationships always have the same stacking sequence of Al–O–Co–O–Li–O. This is confirmed to be the most energetically stable stacking arrangement according to first-principles calculations. Individual domains form as a result of steps one (0 0 0 1) O–Al–O spacing in height on the otherwise flat substrate surface. Because the orientation of adjacent (0 0 0 1) AlO 6 octahedra in Al 2 O 3 are rotated by 180°, while LiO 6 and CoO 6 octahedra in LiCoO 2 are all aligned in the same direction, substrate steps produce LiCoO 2 domains rotated 180° relative to their neighbors. The similar size of oxygen octahedra in the two materials also means that the step height is close to the layer spacing in LiCoO 2 , so that (0 0 0 1) Li and Co layers of adjacent domains are shifted by one layer relative to each other at each domain boundary, aligning Li layers with Co layers across the boundary. The combination of these two effects generates antiphase inversion domains. The domain boundaries effectively sever Li-ion diffusion pathways in the (0 0 0 1) planes between domains and thus are expected to have a detrimental effect on Li-ion conductivity

  19. Single crystalline growth of a soluble organic semiconductor in a parallel aligned liquid crystal solvent using rubbing-treated polyimide films

    Science.gov (United States)

    Matsuzaki, Tomoya; Shibata, Yosei; Takeda, Risa; Ishinabe, Takahiro; Fujikake, Hideo

    2017-01-01

    For directional control of organic single crystals, we propose a crystal growth method using liquid crystal as the solvent. In this study, we examined the formation of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) single crystals using a parallel aligned liquid crystal (LC) cell and rubbing-treated polyimide films in order to clarify the effects of LC alignment on anisotropic C8-BTBT crystal growth. Based on the results, we found that the crystal growth direction of C8-BTBT single crystals was related to the direction of the aligned LC molecules because of rubbing treatment. Moreover, by optical evaluation, we found that the C8-BTBT single crystals have a aligned molecular structure.

  20. Transverse anisotropic magnetoresistance effects in pseudo-single-crystal γ′-Fe4N thin films

    Directory of Open Access Journals (Sweden)

    Kazuki Kabara

    2016-05-01

    Full Text Available Transverse anisotropic magnetoresistance (AMR effects, for which magnetization is rotated in an orthogonal plane to the current direction, were investigated at various temperatures, in order to clarify the structural transformation from a cubic to a tetragonal symmetry in a pseudo-single-crystal Fe4N film, which is predicted from the usual in-plane AMR measurements by the theory taking into account the spin-orbit interaction and crystal field splitting of 3d bands. According to a phenomenological theory of AMR, which derives only from the crystal symmetry, a cos 2θ component ( C 2 tr exists in transverse AMR curves for a tetragonal system but does not for a cubic system. In the Fe4N film, the C 2 tr shows a positive small value (0.12% from 300 K to 50 K. However, the C 2 t r increases to negative value below 50 K and reaches to -2% at 5 K. The drastic increasing of the C 2 tr demonstrates the structural transformation from a cubic to a tetragonal symmetry below 50 K in the Fe4N film. In addition, the out-of-plane and in-plane lattice constants (c and a were precisely determined with X-ray diffraction at room temperature using the Nelson-Riely function. As a result, the positive small C 2 t r above 50 K is attributed to a slightly distorted Fe4N lattice (c/a = 1.002.

  1. Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition

    International Nuclear Information System (INIS)

    Lin, Meng-Yu; Lee, Si-Chen; Lin, Shih-Yen; Wang, Cheng-Hung; Chang, Shu-Wei

    2015-01-01

    In this work, we first investigate the effects of partial pressures and flow rates of precursors on the single-crystal graphene growth using chemical vapor depositions on copper foils. These factors are shown to be critical to the growth rate, seeding density and size of graphene single crystals. The prepared graphene films in millimeter sizes are then bubbling transferred to silicon-dioxide/silicon substrates for high-mobility graphene transistor fabrications. After high-temperature annealing and hexamethyldisilazane passivation, the water attachment is removed from the graphene channel. The elimination of uncontrolled doping and enhancement of carrier mobility accompanied by these procedures indicate that they are promising for fabrications of graphene transistors. (paper)

  2. Photoinduced Optical Spectroscopy of La2CuO4+x Single Crystals and C60 Thin Films

    International Nuclear Information System (INIS)

    Bazhenov, A.V.; Gorbunov, A.V.; Timofeev, V.B.

    1995-01-01

    The evolution of both vibration and electronic spectra of insulating La 2 CuO 4+x single crystals upon charge-transfer gap photoexcitation has been studied by means of photoinduced reflection spectroscopy. Interaction of self-localized hole with some of the A g , B 2g (B 3g ), B 3u optical phonons has been observed. Formation of self-localized hole state and its multiparticle complexes is supposed. Photoinduced absorption in C 60 thin films has been found to differ essentially from that in cuprates

  3. Nucleation and growth of a BCC Fe phase deposited on a single crystal (001) Cu film

    International Nuclear Information System (INIS)

    Koike, J.

    1991-01-01

    As a thin film overlayer grows on a substrate with a different structure, the overlayer initially adopts the substrate structure and subsequently transforms to an equilibrium bulk structure. such a growth characteristic has been extensively studied in Fe/Cu bicrystals. An Fe overlayer grown on a Cu substrate is known to have the fcc structure up to a thickness of 2 nm, whereas a thicker Fe overlayer consists of submicrometer grains of the bcc-Cu has been reported in a relatively thick Fe film and was found to consist of the Nishiyama (N), Kurdjumov-Sacks (KS), or Pitsch (P), depending on the orientation of the substrate surface. However, previous studies have not explained how the bcc structure nucleates or how the observed submicrometer polycrystalline grains form. The paper provides an understanding of these two points. Transmission electron microscopy (TEM) was used to study Fe/Cu bicrystals as the Fe thickness was varied systematically. Analysis of moire fringes, which are caused by superposition of different structures, enabled us to determine the orientation relationship between the very thin Fe layer and the Cu substrate. We show that a single variant of the P orientation relationship, which accompanies atomic rearrangement parallel to the interface, predominates at the nucleation stage of the bcc structure. Nucleation of other variants of P, N, and KS occurs with increasing Fe thickness and causes the formation of the submicrometer bcc grains

  4. Spin-wave propagation and spin-polarized electron transport in single-crystal iron films

    Science.gov (United States)

    Gladii, O.; Halley, D.; Henry, Y.; Bailleul, M.

    2017-11-01

    The techniques of propagating spin-wave spectroscopy and current-induced spin-wave Doppler shift are applied to a 20-nm-thick Fe/MgO(001) film. The magnetic parameters extracted from the position of the spin-wave resonance peaks are very close to those tabulated for bulk iron. From the zero-current propagating wave forms, a group velocity of 4 km/s and an attenuation length of about 6 μ m are extracted for 1.6-μ m -wavelength spin wave at 18 GHz. From the measured current-induced spin-wave Doppler shift, we extract a surprisingly high degree of spin polarization of the current of 83 % , which constitutes the main finding of this work. This set of results makes single-crystalline iron a promising candidate for building devices utilizing high-frequency spin waves and spin-polarized currents.

  5. Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

    Science.gov (United States)

    Yin, H.; Ziemann, P.

    2014-06-01

    Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

  6. Anomalous decrease of resistance at 250 K in ultrathin Au-Nb film on single-crystal silicon

    International Nuclear Information System (INIS)

    Yamamoto, H.; Kawashima, T.; Tanaka, M.

    1986-01-01

    Ultrathin Au-Nb films as thin as 0.2 about 10 nm were deposited on clean surfaces of single-crystal silicon in order to investigate interfacial excitonic superconductivity. The samples were classified into two types, Nb-Au/Si and Au-Nb-Au/Si. In the latter case, the secondary Au film was deposited on the former sample cooled by liquid nitrogen. In the Nb-Au/ Si type of sample, a sheet resistance, R /SUB s/ at room temperature abruptly increased from 10 3 Ωsq -1 order to about 10 5 Ωsq -1 in several days a few months after the sample preparation. Then the sample showed an anomalous decrease of R /SUB s/ at about 250 K and an approximately null resistance at lower temperatures. This phenomenon was not so stable and was observed only for a few days. The Au-Nb-Au/Si type of sample showed low R /SUB s/ (10 2 about 10 3 Ωsq -1 ) at room temperature. A decrease and disappearance of R /SUB s/ were also observed at about 240 K in the sample with comparatively good reproducibility. These phenomena are discussed qualitatively, based on the excitonic superconductive model for an interface of metal/semiconductor by Allender, Bray, and Bardeen

  7. Synthesis of Freestanding Single-crystal Perovskite Films and Heterostructures by Etching of Sacrificial Water-soluble Layers

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Di; Baek, David J.; Hong, Seung Sae; Kourkoutis, Lena F.; Hikita, Yasuyuki; Hwang, Harold Y.

    2016-08-22

    The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality and emergent phenomena, as seen in perovskite heterostructures. However, separation of these layers from the growth substrate has proven challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr3Al2O6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr3Al2O6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds.

  8. Defect free single crystal thin layer

    KAUST Repository

    Elafandy, Rami Tarek Mahmoud

    2016-01-28

    A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.

  9. Defect free single crystal thin layer

    KAUST Repository

    Elafandy, Rami Tarek Mahmoud; Ooi, Boon S.

    2016-01-01

    A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.

  10. Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperatures

    OpenAIRE

    Thiery, Nicolas; Naletov, Vladimir V.; Vila, Laurent; Marty, Alain; Brenac, Ariel; Jacquot, Jean-François; de Loubens, Grégoire; Viret, Michel; Anane, Abdelmadjid; Cros, Vincent; Youssef, Jamal Ben; Demidov, Vladislav E.; Demokritov, Sergej O.; Klein, Olivier

    2017-01-01

    We report a study on the electrical properties of 19 nm thick Yttrium Iron Garnet (YIG) films grown by liquid phase epitaxy. The electrical conductivity and Hall coefficient are measured in the high temperature range [300,400]~K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band-gap of $E_g\\approx 2$ eV, indicating that epitaxial YIG ultra-thin film...

  11. Periodic domain inversion in x-cut single-crystal lithium niobate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Mackwitz, P., E-mail: peterm@mail.upb.de; Rüsing, M.; Berth, G.; Zrenner, A. [Department Physik, Universität Paderborn, 33095 Paderborn (Germany); Center for Optoelectronics and Photonics Paderborn, 33095 Paderborn (Germany); Widhalm, A.; Müller, K. [Department Physik, Universität Paderborn, 33095 Paderborn (Germany)

    2016-04-11

    We report the fabrication of periodically poled domain patterns in x-cut lithium niobate thin-film. Here, thin films on insulator have drawn particular attention due to their intrinsic waveguiding properties offering high mode confinement and smaller devices compared to in-diffused waveguides in bulk material. In contrast to z-cut thin film lithium niobate, the x-cut geometry does not require back electrodes for poling. Further, the x-cut geometry grants direct access to the largest nonlinear and electro-optical tensor element, which overall promises smaller devices. The domain inversion was realized via electric field poling utilizing deposited aluminum top electrodes on a stack of LN thin film/SiO{sub 2} layer/Bulk LN, which were patterned by optical lithography. The periodic domain inversion was verified by non-invasive confocal second harmonic microscopy. Our results show domain patterns in accordance to the electrode mask layout. The second harmonic signatures can be interpreted in terms of spatially, overlapping domain filaments which start their growth on the +z side.

  12. A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals.

    Science.gov (United States)

    Kamlapure, Anand; Saraswat, Garima; Ganguli, Somesh Chandra; Bagwe, Vivas; Raychaudhuri, Pratap; Pai, Subash P

    2013-12-01

    We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350 mK and in magnetic fields up to 9 T, with thin film deposition and in situ single crystal cleaving capabilities. The main focus lies on the simple design of STM head and a sample holder design that allows us to get spectroscopic data on superconducting thin films grown in situ on insulating substrates. Other design details on sample transport, sample preparation chamber, and vibration isolation schemes are also described. We demonstrate the capability of our instrument through the atomic resolution imaging and spectroscopy on NbSe2 single crystal and spectroscopic maps obtained on homogeneously disordered NbN thin film.

  13. Catalyst growth of single crystal aligned ZnO nanorods on ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Dongxu; Andreazza, Caroline; Andreazza, Pascal [Centre de Recherche sur la Matiere Divisee, CNRS-Universite d' Orleans, 1b rue de la Ferollerie, 45071 Orleans cedex 2 (France)

    2005-02-01

    One dimensional ZnO nanorods were successfully fabricated on Si substrates via a simple physical vapor-phase transport method at 950 C. A ZnO shell covered Au/Zn alloy is assumed as the nucleation site, then ZnO nanorods grow following a vapor-solid (VS) process. In order to guide the nanorod growth a c-axis oriented ZnO thin film and Au catalyst were first deposited on Si (100) surface. SEM images show nanorods grown on this substrate are vertical to the substrate surface. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Spectroelectrochemical study of the adsorption of acetate anions at gold single crystal and thin-film electrodes

    International Nuclear Information System (INIS)

    Berna, Antonio; Delgado, Jose Manuel; Orts, Jose Manuel; Rodes, Antonio; Feliu, Juan Miguel

    2008-01-01

    Acetate adsorption at gold electrodes is studied in perchloric acid solutions by cyclic voltammetry and in-situ infrared spectroscopy. External reflection measurements, performed with gold single crystal electrodes, are combined with Surface Enhanced Infrared Reflection Absorption Spectroscopy experiments under attenuated total reflection conditions (ATR-SEIRAS) carried out with sputtered gold thin-film electrodes. Theoretical harmonic IR frequencies of acetate species adsorbed with different geometries on Au clusters with (1 1 1), (1 0 0) and (1 1 0) orientations have been obtained from B3LYP/LANL2DZ, 6-31 + G* calculations. The theoretical and experimental results confirm that, irrespective of the surface crystallographic orientation, bonding of acetate to the surface involves the two oxygen atoms of the carboxylate group, with the OCO plane perpendicular to the metal surface. DFT calculations reveal also that the total charge of the metal cluster-acetate supermolecule has small effect on the vibrational frequencies of adsorbed acetate species. Both the external and the internal reflection measurements show the co-adsorption of acetate and perchlorate anions. Step-scan measurements carried out with the gold thin-film electrodes have allowed the monitoring of the time-dependent behaviour of perchlorate, acetate and water bands in potential step experiments. Acetate adsorption under those conditions is shown to involve perchlorate desorption and to follow a Langmuir-type kinetics. The step-scan spectra also show the rise and decay of transient water structures with parallel time-dependent shifts of the background intensity in the infrared spectra

  15. Coupling of carbon monoxide molecules over oxygen-defected UO2(111) single crystal and thin film surfaces.

    Science.gov (United States)

    Senanayake, S D; Waterhouse, G I N; Idriss, H; Madey, Theodore E

    2005-11-22

    While coupling reactions of carbon-containing compounds are numerous in organometallic chemistry, they are very rare on well-defined solid surfaces. In this work we show that the reductive coupling of two molecules of carbon monoxide to C2 compounds (acetylene and ethylene) could be achieved on oxygen-defected UO2(111) single crystal and thin film surfaces. This result allows in situ electron spectroscopic investigation of a typical organometallic reaction such as carbon coupling and extends it to heterogeneous catalysis and solids. By using high-resolution photoelectron spectroscopy (HRXPS) it was possible to track the changes in surface states of the U and O atoms as well as identify the intermediate of the reaction. Upon CO adsorption U cations in low oxidation states are oxidized to U4+ ions; this was accompanied by an increase of the O-to-U surface ratios. The HRXPS C 1s lines show the presence of adsorbed species assigned to diolate species (-OCH=CHO-) that are most likely the reaction intermediate in the coupling of two CO molecules to acetylene and ethylene.

  16. Coupling of Carbon Monoxide Molecules over Oxygen Defected UO2 (111) Single Crystal and Thin Film Surfaces

    International Nuclear Information System (INIS)

    Senanayake, S.; Waterhouse, G.; Idriss, H.; Madey, T.

    2005-01-01

    While coupling reactions of carbon-containing compounds are numerous in organometallic chemistry, they are very rare on well-defined solid surfaces. In this work we show that the reductive coupling of two molecules of carbon monoxide to C 2 compounds (acetylene and ethylene) could be achieved on oxygen-defected UO 2 (111) single crystal and thin film surfaces. This result allows in situ electron spectroscopic investigation of a typical organometallic reaction such as carbon coupling and extends it to heterogeneous catalysis and solids. By using high-resolution photoelectron spectroscopy (HRXPS) it was possible to track the changes in surface states of the U and O atoms as well as identify the intermediate of the reaction. Upon CO adsorption U cations in low oxidation states are oxidized to U 4+ ions; this was accompanied by an increase of the O-to-U surface ratios. The HRXPS C 1s lines show the presence of adsorbed species assigned to diolate species (-OCH=CHO-) that are most likely the reaction intermediate in the coupling of two CO molecules to acetylene and ethylene

  17. Epitaxial growth of bcc-FexCo100-x thin films on MgO(1 1 0) single-crystal substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nishiyama, Tsutomu; Shikada, Kouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

    2010-01-01

    Fe x Co 100-x (x=100, 65, 50 at%) epitaxial thin films were prepared on MgO(1 1 0) single-crystal substrates heated at 300 deg. C by ultra-high vacuum molecular beam epitaxy. The film structure and the growth mechanism are discussed. FeCo(2 1 1) films with bcc structure grow epitaxially on MgO(1 1 0) substrates with two types of variants whose orientations are rotated around the film normal by 180 deg. each other for all compositions. Fe x Co 100-x film growth follows the Volmer Weber mode. X-ray diffraction analysis indicates the out-of-plane and the in-plane lattice spacings are in agreement with the values of respective bulk Fe x Co 100-x crystals with very small errors less than ±0.4%, suggesting the strains in the films are very small. High-resolution cross-sectional transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the film at the Fe 50 Co 50 /MgO interface along the MgO[1 1-bar 0] direction. The presence of such periodical dislocations decreases the large lattice mismatch of about -17% existing at the FeCo/MgO interface along the MgO[1 1-bar 0] direction.

  18. Epitaxial growth of bcc-Fe{sub x}Co{sub 100-x} thin films on MgO(1 1 0) single-crystal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ohtake, Mitsuru, E-mail: ohtake@futamoto.elect.chuo-u.ac.j [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Nishiyama, Tsutomu; Shikada, Kouhei [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan); Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)

    2010-07-15

    Fe{sub x}Co{sub 100-x} (x=100, 65, 50 at%) epitaxial thin films were prepared on MgO(1 1 0) single-crystal substrates heated at 300 deg. C by ultra-high vacuum molecular beam epitaxy. The film structure and the growth mechanism are discussed. FeCo(2 1 1) films with bcc structure grow epitaxially on MgO(1 1 0) substrates with two types of variants whose orientations are rotated around the film normal by 180 deg. each other for all compositions. Fe{sub x}Co{sub 100-x} film growth follows the Volmer Weber mode. X-ray diffraction analysis indicates the out-of-plane and the in-plane lattice spacings are in agreement with the values of respective bulk Fe{sub x}Co{sub 100-x} crystals with very small errors less than +-0.4%, suggesting the strains in the films are very small. High-resolution cross-sectional transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the film at the Fe{sub 50}Co{sub 50}/MgO interface along the MgO[1 1-bar 0] direction. The presence of such periodical dislocations decreases the large lattice mismatch of about -17% existing at the FeCo/MgO interface along the MgO[1 1-bar 0] direction.

  19. Low-Temperature Band Transport and Impact of Contact Resistance in Organic Field-Effect Transistors Based on Single-Crystal Films of Ph-BTBT-C10

    Science.gov (United States)

    Cho, Joung-min; Mori, Takehiko

    2016-06-01

    Transistors based on single-crystal films of 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) fabricated using the blade-coating method are investigated by the four-probe method down to low temperatures. The four-probe mobility is as large as 18 cm2/V s at room temperature, and increases to 45 cm2/V s at 80 K. At 60 K the two-probe mobility drops abruptly by about 50%, but the mobility drop is mostly attributed to the increase of the source resistance. The carrier transport in the present single-crystal film is regarded as essentially bandlike down to 30 K.

  20. Preparation and characterization of Bi2Sr2CaCu2O8+δ thin films on MgO single crystal substrates by chemical solution deposition

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Kepa, Katarzyna; Hlásek, T.

    2013-01-01

    Bi2Sr2CaCu2O8 thin films have been deposited on MgO single crystal substrates by spin-coating a solution based on 2-ethylhexanoate precursors. Pyrolysis takes place between 200°C and 450°C and is accompanied by the release of 2-ethylhexanoic acid, CO2 and H2O vapour. Highly c-axis oriented Bi2Sr2Ca...

  1. Optical characterization of epitaxial single crystal CdTe thin films on Al{sub 2}O{sub 3} (0001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jovanovic, S.M.; Devenyi, G.A., E-mail: devenyga@mcmaster.ca; Jarvis, V.M.; Meinander, K.; Haapamaki, C.M.; Kuyanov, P.; Gerber, M.; LaPierre, R.R.; Preston, J.S.

    2014-11-03

    The optoelectronic properties of single crystal CdTe thin films were investigated by photoluminescence spectroscopy, photoreflectance spectroscopy and variable angle spectroscopic ellipsometry. The room temperature bandgap was measured to be 1.51 eV and was consistent between spectroscopic measurements and previously reported values. Breadth of bandgap emission was consistent with high quality material. Low temperature photoluminescence spectra indicated a dominant emission consistent with bound excitons. Emissions corresponding to self-compensation defects, doping and contaminants were not found. Variable angle spectroscopic ellipsometry measurements over the near-UV to infrared range demonstrated sharp resonance peaks. All spectroscopic measurements indicate high quality thin film material of comparable or better quality than bulk CdTe. - Highlights: • High quality epitaxial CdTe thin films were grown. • Two dimensional X-ray diffraction characterization confirmed single crystal material. • Photoluminescence indicated low defect density when compared to bulk single crystals. • Optical characterization indicated the presence of room temperature excitons.

  2. High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

    Science.gov (United States)

    Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

    2016-11-02

    Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

  3. Structure characterization of Pd/Co/Pd tri-layer films epitaxially grown on MgO single-crystal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tobari, Kousuke, E-mail: tobari@futamoto.elect.chuo-u.ac.jp; Ohtake, Mitsuru; Nagano, Katsumasa; Futamoto, Masaaki

    2011-09-30

    Pd/Co/Pd tri-layer films were prepared on MgO substrates of (001), (111), and (011) orientations at room temperature by ultra high vacuum rf magnetron sputtering. The detailed film structures around the Co/Pd and the Pd/Co interfaces are investigated by reflection high energy electron diffraction. Pd layers of (001){sub fcc}, (111){sub fcc}, and (011){sub fcc} orientations epitaxially grow on the respective MgO substrates. Strained fcc-Co(001) single-crystal layers are formed on the Pd(001){sub fcc} layers by accommodating the fairly large lattice mismatch between the Co and the Pd layers. On the Co layers,, Pd polycrystalline layers are formed. When Co films are formed on the Pd(111){sub fcc} and the Pd(011){sub fcc} layers, atomic mixing is observed around the Co/Pd interfaces and fcc-CoPd alloy phases are coexisting with Co crystals. The Co crystals formed on the Pd(111){sub fcc} layers consist of hcp(0001) + fcc(111) and Pd(111){sub fcc} epitaxial layers are formed on the Co layers. Co crystals epitaxially grow on the Pd(011){sub fcc} layers with two variants, hcp(11-bar 00) and fcc(111). On the Co layers, Pd(011){sub fcc} epitaxial layers are formed.

  4. Characterization of single crystal uranium-oxide thin films grown via reactive-gas magnetron sputtering on yttria-stabilized zirconia and sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Strehle, Melissa M.; Heuser, Brent J., E-mail: bheuser@illinois.edu; Elbakhshwan, Mohamed S.; Han Xiaochun; Gennardo, David J.; Pappas, Harrison K.; Ju, Hyunsu

    2012-06-30

    The microstructure and valence states of three single crystal thin film systems, UO{sub 2} on (11{sup Macron }02) r-plane sapphire, UO{sub 2} on (001) yttria-stabilized zirconia, and U{sub 3}O{sub 8} on (11{sup Macron }02) r-plane sapphire, grown via reactive-gas magnetron sputtering are analyzed primarily with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). XRD analysis indicates the growth of single crystal domains with varying degrees of mosaicity. XPS and UPS analyses yield U-4f, U-5f, O-1s, and O-2p electron binding energies consistent with reported bulk values. A change from p-type to n-type semiconductor behavior induced by preferential sputtering of oxygen during depth profile analysis was observed with both XPS and UPS. Trivalent cation impurities (Nd and Al) in UO{sub 2} lower the Fermi level, shifting the XPS spectral weight. This observation is consistent with hole-doping of a Mott-Hubbard insulator. The uranium oxide-(11{sup Macron }02) sapphire system is unstable with respect to Al interdiffusion across the film-substrate interface at elevated temperature. - Highlights: Black-Right-Pointing-Pointer Single crystal uranium-oxides grown on sapphire and yttria-stabilized zirconia. Black-Right-Pointing-Pointer Anion and cation valence states studied by photoelectron emission spectroscopy. Black-Right-Pointing-Pointer Trivalent Nd and Al impurities lower the Fermi level. Black-Right-Pointing-Pointer Uranium-oxide films on sapphire found to be unstable with respect to Al interdiffusion.

  5. Ion backscattering, channeling and nuclear reaction analysis study of passive films formed on FeCrNi and FeCrNiMo (100) single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, C; Schmaus, D [Paris-7 Univ., 75 (France). Groupe de Physique des Solides de l' ENS; Elbiache, A; Marcus, P [Ecole Nationale Superieure de Chimie, 75 - Paris (France)

    1990-01-01

    The compositions of passive films formed on Fe-17Fr-13Ni (at. %) and Fe-18.5Cr-14Ni-1.5Mo (100) single crystals have been determined and the structure of the alloy under the film has been investigated. The alloys were passivated in 0.05M H{sub 2}SO{sub 4} at 250 mV/SHE for 30 min. The oxygen content was measured by nuclear microanalysis using the {sup 16}O(d,p) {sup 17}O* reaction. The oxygen content in the passive film is similar for the two alloys and equal to (12{plus minus}2) 10{sup 15} O/cm{sup 2}. The cationic compositions of the passive films have been determined by {sup 4}He channeling at two incident beam energies: 0.8 and 2.0 MeV. For the two alloys studied, a total cation content of (5{plus minus}2)10{sup 15} at/cm{sup 2} is found in the passive films. The corresponding thickness is about 12 A. There is an excess of oxygen, which can be attributed to the presence of hydroxyls and sulfate. A strong chromium enrichment is found in the passive film formed on both alloys: chromium represents about 50% of the cations. There is no evidence of molybdenum enrichment in the passive film formed on the Mo-alloyed stainless steel. The comparison of the results obtained at the two different incident beam energies (0.8MeV and 2MeV) reveals the existence of defects at the alloy/passive film interface. (author).

  6. Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

    Energy Technology Data Exchange (ETDEWEB)

    Tiriolo, Raffaele [Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Rangnekar, Neel [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Zhang, Han [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Shete, Meera [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Bai, Peng [Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA; Nelson, John [Characterization Facility, University of Minnesota, 12 Shepherd Labs, 100 Union St. S.E. Minneapolis MN 55455 USA; Karapetrova, Evguenia [Surface Scattering and Microdiffraction, X-ray Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Building 438-D002 Argonne IL 60439 USA; Macosko, Christopher W. [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Siepmann, Joern Ilja [Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA; Lamanna, Ernesto [Department of Health Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Lavano, Angelo [Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Tsapatsis, Michael [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA

    2017-05-08

    A low-temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low-k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b-oriented film of the pure-silica zeolite MFI (silicalite-1) supported on a gold-coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in-plane growth. The traditional calcination process is replaced with a non-thermal photochemical activation to ensure preservation of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal-insulator-metal configuration, highlights the ultralow k approximate to 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E approximate to 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.

  7. Fast neutron induced flux pinning in Tl-based high-Tc single crystals and thin films, highly textured tapes and melt-textured bulk 123-superconductors

    International Nuclear Information System (INIS)

    Brandstaetter, G.; Samadi Hosseinalli, G.; Kern, C.; Sauerzopf, F.M.; Schulz, G.W.; Straif, W.; Yang, X.; Weber, H.W.; Hu, Q.Y.

    1999-01-01

    Various compounds (TI-2223, TI-1223, TI-2212) as well as material forms (single crystals, thin films, ceramics, tapes) of TI-based high temperature superconductors were investigated by magnetic and transport techniques. TI-2223 has a very 'low lying' irreversibility line (H parallel e) and negligible critical current densities J c at 77 K. However, the irreversibility line shifts to higher fields and temperatures and J c is strongly enhanced, even at 77 K, after fast neutron irradiation. In contrast, the related TI-1223 compound has a much steeper irreversibility line (H parallel c) similar to that of Y-123. J c is significant up to 77 K, even in the unirradiated state, and can be largely improved by neutron irradiation. Transport measurements made on TI-1223 tapes still show much lower critical current densities. TI-2212 and Tl-2223 thin films have J c 's at 77 K, which are comparable to those of TI-1223 single crystals. Transport measurements on highly textured Bi-2223 tapes as well as flux profile measurements on Nd-123 bulk superconductors confirm the beneficial effects of neutron induced defects (collision cascades) for flux pinning. (author)

  8. Effect of substrate bias voltage on tensile properties of single crystal silicon microstructure fully coated with plasma CVD diamond-like carbon film

    Science.gov (United States)

    Zhang, Wenlei; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

    2018-06-01

    Tensile strength and strength distribution in a microstructure of single crystal silicon (SCS) were improved significantly by coating the surface with a diamond-like carbon (DLC) film. To explore the influence of coating parameters and the mechanism of film fracture, SCS microstructure surfaces (120 × 4 × 5 μm3) were fully coated by plasma enhanced chemical vapor deposition (PECVD) of a DLC at five different bias voltages. After the depositions, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), thermal desorption spectrometry (TDS), surface profilometry, atomic force microscope (AFM) measurement, and nanoindentation methods were used to study the chemical and mechanical properties of the deposited DLC films. Tensile test indicated that the average strength of coated samples was 13.2-29.6% higher than that of the SCS sample, and samples fabricated with a -400 V bias voltage were strongest. The fracture toughness of the DLC film was the dominant factor in the observed tensile strength. Deviations in strength were reduced with increasingly negative bias voltage. The effect of residual stress on the tensile properties is discussed in detail.

  9. Electrically Anisotropic Layered Perovskite Single Crystal

    KAUST Repository

    Li, Ting-You

    2016-04-01

    Organic-inorganic hybrid perovskites (OIHPs), which are promising materials for electronic and optoelectronic applications (1-10), have made into layered organic-inorganic hybrid perovskites (LOIHPs). These LOIHPs have been applied to thin-film transistors, solar cells and tunable wavelength phosphors (11-18). It is known that devices fabricated with single crystal exhibit the superior performance, which makes the growth of large-sized single crystals critical for future device applications (19-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating the potentials in mass production. After that, we reveal anisotropic electrical and optoelectronic properties which proved the carrier propagating along inorganic framework. The carrier mobility of in-inorganic-plane (in-plane) devices shows the average value of 45 cm2 V–1 s–1 which is about 100 times greater than the record of LOIHP devices (15), showing the importance of single crystal in device application. Moreover, the LOIHP single crystals show its ultra-short carrier lifetime of 42.7 ps and photoluminescence quantum efficiency (PLQE) of 25.4 %. We expect this report to be a start of LOIHPs for advanced applications in which the anisotropic properties are needed (24-25), and meets the demand of high-speed applications and fast-response applications.

  10. Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C

    Science.gov (United States)

    Higashi, H.; Kudo, K.; Yamamoto, K.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

    2018-06-01

    We study the electrical properties of pseudo-single-crystalline Ge (PSC-Ge) films grown by a Au-induced layer exchange crystallization method at 250 °C. By inserting the SiNx layer between PSC-Ge and SiO2, we initiatively suppress the influence of the Ge/SiO2 interfacial defective layers, which have been reported in our previous works, on the electrical properties of the PSC-Ge layers. As a result, we can detect the influence of the ionized Au+ donors on the temperature-dependent hole concentration and Hall mobility. To further examine their electrical properties in detail, we also fabricate p-thin-film transistors (TFTs) with the PSC-Ge layer. Although the off-state leakage currents are suppressed by inserting the SiNx layer, the value of on/off ratio remains poor (leakage current although a nominal field effect mobility is enhanced up to ˜25 cm2/V s. Considering these features, we conclude that the Au contaminations into the PSC-Ge layer can affect the electrical properties and device performances despite a low-growth temperature of 250 °C. To achieve further high-performance p-TFTs, we have to suppress the Au contaminations into PSC-Ge during the Au-induced crystallization growth.

  11. Quasi-homoepitaxial growth of a-axis oriented PrBa sub 2 Cu sub 3 O sub 7 sub - subdelta thick film on (100) YBa sub 2 Cu sub 3 O sub 7 sub - subdelta single crystal

    CERN Document Server

    Sato, M; Morishita, T

    2003-01-01

    The structural characterizations of the quasi-homoepitaxial growth of a-axis oriented PrBa sub 2 Cu sub 3 O sub 7 sub - subdelta thick film grown on (100) YBa sub 2 Cu sub 3 O sub 7 sub - subdelta single crystal were investigated in comparison with those of the film grown on (001) YBa sub 2 Cu sub 3 O sub 7 sub - subdelta single crystal. The a-axis oriented PrBa sub 2 Cu sub 3 O sub 7 sub - subdelta films, expected to be a barrier layer, were prepared using a dc-95 MHz hybrid plasma sputtering on (100) and (001) YBa sub 2 Cu sub 3 O sub 7 sub - subdelta single crystals that are superconducting ground planes. The atomic force microscopy image revealed that the surfaces of 700-nm-thick a-axis PrBa sub 2 Cu sub 3 O sub 7 sub - subdelta films on (100) YBa sub 2 Cu sub 3 O sub 7 sub - subdelta single crystals were smooth with a mean roughness of 2.8 nm. X-ray diffraction scans showed that a-axis PrBa sub 2 Cu sub 3 O sub 7 sub - subdelta films deposited on (100) YBa sub 2 Cu sub 3 O sub 7 sub - subdelta single cry...

  12. Synchrotron White Beam X-Ray Topography Characterization of LGX and SXGS Bulk Single Crystals, Thin Films and Piezoelectric Devices

    National Research Council Canada - National Science Library

    Dudley, Michael

    2007-01-01

    ...), to the determination of defect and general distortion distributions in novel LGX piezoelectric crystals with a view to enabling improvement in crystal quality and consequently in piezoelectric device performance...

  13. Surface study and thickness control of thin Al2O3 film on Cu-9%Al(111) single crystal

    International Nuclear Information System (INIS)

    Yamauchi, Yasuhiro; Yoshitake, Michiko; Song Weijie

    2004-01-01

    We were successful in growing a uniform flat Al 2 O 3 film on the Cu-9%Al(111) surface using the improved cleaning process, low ion energy and short time sputtering. The growth of ultra-thin film of Al 2 O 3 on Cu-9%Al was investigated using Auger electron spectroscopy (AES) and a scanning electron microscope (SEM). The Al 2 O 3 film whose maximum thickness was about 4.0 nm grew uniformly on the Cu-9%Al surface. The Al and O KLL Auger peaks of Al 2 O 3 film shifted toward low kinetic energy, and the shifts were related to Schottky barrier formation and band bending at the Al 2 O 3 /Cu-9%Al interface. The thickness of Al 2 O 3 film on the Cu-9%Al surface was controlled by the oxygen exposure

  14. Effects of argon implantation and vacuum annealing of the superconducting properties of single-crystal niobium films

    International Nuclear Information System (INIS)

    Zakirov, R.M.; Kuznetsov, V.P.; Shermergor, T.D.

    1980-01-01

    Characteristics of superconducting transition (Tsub(K), Hsub(perpendicular)) of monocrystalline niobium films on sapphire, irradiated by 35 keV Ar ions within 0.62x10 15 -5.6x10 16 ion/cm 2 dose range, are investigated. Introduction of argon atoms results in Tsub(K) decrease of films and rhosub(n), Hsub(perpendicular 0) and dHsub(perpendicular)/dT increase due to reduction of free path length of electrons. Shown is an essential difference in the behaviour of superconducting parameters of irradiated monocrystalline niobium films and films with niobium, dassol ved in the niobium lattice. Introduction of oxygen has been carried out by annealing of films in vacuum after their heating in the air

  15. Guided Wave Propagation in a Gold Electrode Film on a Pb(Mg1/3Nb2/3)O3−33%PbTiO3 Ferroelectric Single Crystal Substrate

    International Nuclear Information System (INIS)

    Huang Nai-Xing; LÜ Tian-Quan; Zhang Rui; Wang Yu-Ling; Cao Wen-Wu

    2014-01-01

    Dispersion relations of Love mode acoustic guided waves propagation in Pb(Mg 1/3 Nb 2/3 )O 3 −33%PbTiO 3 (PMN-0.33 PT) single crystal with a gold electrode film are calculated. There is no cross coupling among Love wave modes, which is conducive to eliminating the cross interference between modes. The general formula is derived to precisely measure the thickness of the electrode. More acoustic energy would be concentrated inside the electrode with the increase of film thickness for a given frequency. Compared with the PZT-5 ceramic, [001] c poled PMN-33%PT single crystal has a slower attenuation of the amplitude of the acoustic guided wave. Therefore, single crystal is extremely suitable for making low loss acoustic wave devices with a high operating frequency

  16. A multistep single-crystal-to-single-crystal bromodiacetylene dimerization

    Science.gov (United States)

    Hoheisel, Tobias N.; Schrettl, Stephen; Marty, Roman; Todorova, Tanya K.; Corminboeuf, Clémence; Sienkiewicz, Andrzej; Scopelliti, Rosario; Schweizer, W. Bernd; Frauenrath, Holger

    2013-04-01

    Packing constraints and precise placement of functional groups are the reason that organic molecules in the crystalline state often display unusual physical or chemical properties not observed in solution. Here we report a single-crystal-to-single-crystal dimerization of a bromodiacetylene that involves unusually large atom displacements as well as the cleavage and formation of several bonds. Density functional theory computations support a mechanism in which the dimerization is initiated by a [2 + 1] photocycloaddition favoured by the nature of carbon-carbon short contacts in the crystal structure. The reaction proceeded up to the theoretical degree of conversion without loss of crystallinity, and it was also performed on a preparative scale with good yield. Moreover, it represents the first synthetic pathway to (E)-1,2-dibromo-1,2-diethynylethenes, which could serve as synthetic intermediates for the preparation of molecular carbon scaffolds. Our findings both extend the scope of single-crystal-to-single-crystal reactions and highlight their potential as a synthetic tool for complex transformations.

  17. Bi sub 2 Sr sub 2 Ca sub n sub - sub 1 Cu sub n O sub y films sputtered on substrates of Bi sub 2 Sr sub 2 CuO sub y single crystals

    CERN Document Server

    Katsurahara, K; Matsumoto, K; Fujiwara, N; Tanaka, H; Kishida, S

    2003-01-01

    We prepared Bi sub 2 Sr sub 2 CaCu sub 2 O sub y (Bi-2212) films on substrates of Bi sub 2 Sr sub 2 CuO sub y (Bi-2201) single crystals by a rf magnetron sputtering method, where He and O sub 2 mixture sputtering gas and an off-axis geometry were used. The EPMA measurement indicated that the films deposited on the Bi-2201 single crystal had approximately the same composition as those on MgO substrate, which showed a Bi-221 single-phase. The film deposited on the Bi-2201 single crystal post-annealed at 500degC for 0.5h showed a metallic temperature dependent resistance in the normal state and the superconducting transition (T sub c sup o sup n sup s sup e sup t) of about 80 K. Therefore, the Bi-2212 films are considerate to grow on the substrate of the Bi-2201 singe crystal. (author)

  18. Hall coefficients and optical properties of La/sub 2-//sub x/Sr/sub x/CuO4 single-crystal thin films

    International Nuclear Information System (INIS)

    Suzuki, M.

    1989-01-01

    The low-field Hall coefficient R/sub H/, optical reflectance and transmittance of the La/sub 2-//sub x/Sr/sub x/CuO 4 system with various Sr concentrations from x = 0 to 0.36 are systematically studied using single-crystal thin films epitaxially grown on (100) face SrTiO 3 substrates with the c axis normal to the film surface. For the x range measured, R/sub H/ is positive and decreases more rapidly than that expected from the Sr concentration but more slowly than reported earlier for polycrystalline specimens, indicating anisotropy of R/sub H/. Furthermore, the x dependence indicates deviation from that expected from a simple band model. Within the superconducting composition range, R/sub H/ exhibits characteristic temperature dependence. The optical reflectance spectrum changes from that of a semiconductor at x = 0 to a typical metallic one characterized by the Drude model for x>0.1, indicating the development of itinerant holes in the Cu-O planes. In the optical transmission spectra, an anomalous absorption band is seen in addition to the fundamental absorption corresponding to an energy gap of about 2 eV. This band, which develops with Sr doping, implies an enhancement of the density of states near the Fermi level. Taking these observations into account, the normal-state transport properties are explained with a qualitative consistence

  19. Diffraction. Single crystal, magnetic

    International Nuclear Information System (INIS)

    Heger, G.

    1999-01-01

    The analysis of crystal structure and magnetic ordering is usually based on diffraction phenomena caused by the interaction of matter with X-rays, neutrons, or electrons. Complementary information is achieved due to the different character of X-rays, neutrons and electrons, and hence their different interactions with matter and further practical aspects. X-ray diffraction using conventional laboratory equipment and/or synchrotron installations is the most important method for structure analyses. The purpose of this paper is to discuss special cases, for which, in addition to this indispensable part, neutrons are required to solve structural problems. Even though the huge intensity of modern synchrotron sources allows in principle the study of magnetic X-ray scattering the investigation of magnetic structures is still one of the most important applications of neutron diffraction. (K.A.)

  20. Single Crystal Surfaces

    Science.gov (United States)

    Aguilar-Santillan, Joaquin

    2014-06-01

    The present work studies (0001) Al2O3 and (111) Al2MgO4 wetting with pure molten Al by the sessile drop technique from 1073 K to 1473 K (800 °C to 1200 °C) under Ar at PO2 10-15 Pa. Al pure liquid wets a smooth and chemically homogeneous surface of an inert solid, the wetting driving force ( t, T) can be readily studied when surface solid roughness increases in the system. Both crystals planes (0001) Al2O3 and (111) Al2MgO4 have crystallographic surfaces with identical O-2 crystalline positions however considering Mg2+ content in Al2MgO4 structure may influence a reactive mode. Kinetic models results under similar experimental conditions show that Al wetting on (0001) Al2O3 is less reactive than (111) Al2MgO4, however at >1273 K (1000 °C) (0001) Al2O3 transformation occurs and a transition of wetting improves. The (111) Al2MgO4 and Al system promotes interface formations that slow its wetting process.

  1. On dewetting of thin films due to crystallization (crystallization dewetting).

    Science.gov (United States)

    Habibi, Mehran; Rahimzadeh, Amin; Eslamian, Morteza

    2016-03-01

    Drying and crystallization of a thin liquid film of an ionic or a similar solution can cause dewetting in the resulting thin solid film. This paper aims at investigating this type of dewetting, herein termed "crystallization dewetting", using PbI2 dissolved in organic solvents as the model solution. PbI2 solid films are usually used in X-ray detection and lead halide perovskite solar cells. In this work, PbI2 films are fabricated using spin coating and the effect of major parameters influencing the crystallization dewetting, including the type of the solvent, solution concentration, drying temperature, spin speed, as well as imposed vibration on the substrate are studied on dewetting, surface profile and coverage, using confocal scanning laser microscopy. Simplified hydrodynamic governing equations of crystallization in thin films are presented and using a mathematical representation of the process, it is phenomenologically demonstrated that crystallization dewetting occurs due to the absorption and consumption of the solution surrounding a growing crystal. Among the results, it is found that a low spin speed (high thickness), a high solution concentration and a low drying temperature promote crystal growth, and therefore crystallization dewetting. It is also shown that imposed vibration on the substrate can affect the crystal size and crystallization dewetting.

  2. Scanning tunneling spectroscopic studies of superconducting NbN single crystal thin films at 4.2 K

    International Nuclear Information System (INIS)

    Kashiwaya, S.; Koyanagi, M.; Matsuda, M.; Shoji, A.; Shibata, H.

    1991-01-01

    This paper reports on a Low Temperature Scanning Tunneling Microscope (LTSTM) constructed to study the microscopic properties of superconductors. It has atomic resolution from room temperature to 4.2 K. Conductance spectra obtained between a Pt tip and a NbN thin film agreed well with theoretical curves based on the BCS theory

  3. Crystal ball single event display

    International Nuclear Information System (INIS)

    Grosnick, D.; Gibson, A.; Allgower, C.; Alyea, J.; Argonne National Lab., IL

    1997-01-01

    The Single Event Display (SED) is a routine that is designed to provide information graphically about a triggered event within the Crystal Ball. The SED is written entirely in FORTRAN and uses the CERN-based HICZ graphing package. The primary display shows the amount of energy deposited in each of the NaI crystals on a Mercator-like projection of the crystals. Ten different shades and colors correspond to varying amounts of energy deposited within a crystal. Information about energy clusters is displayed on the crystal map by outlining in red the thirteen (or twelve) crystals contained within a cluster and assigning each cluster a number. Additional information about energy clusters is provided in a series of boxes containing useful data about the energy distribution among the crystals within the cluster. Other information shown on the event display include the event trigger type and data about π o 's and η's formed from pairs of clusters as found by the analyzer. A description of the major features is given, along with some information on how to install the SED into the analyzer

  4. Prospects for the synthesis of large single-crystal diamonds

    International Nuclear Information System (INIS)

    Khmelnitskiy, R A

    2015-01-01

    The unique properties of diamond have stimulated the study of and search for its applications in many fields, including optics, optoelectronics, electronics, biology, and electrochemistry. Whereas chemical vapor deposition allows the growth of polycrystalline diamond plates more than 200 mm in diameter, most current diamond application technologies require large-size (25 mm and more) single-crystal diamond substrates or films suitable for the photolithography process. This is quite a challenge, because the largest diamond crystals currently available are 10 mm or less in size. This review examines three promising approaches to fabricating large-size diamond single crystals: growing large-size single crystals, the deposition of heteroepitaxial diamond films on single-crystal substrates, and the preparation of composite diamond substrates. (reviews of topical problems)

  5. Growth of thin SiC films on Si single crystal wafers with a microwave excited plasma of methane gas

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Morgen, Per

    2013-01-01

    Wehave studied the growth and properties of SiC films on Siwafers, under ultrahigh vacuumbackground con- ditions, using a remote-, microwave excited,methane plasma as a source of active carbon and hydrogen,while the Si substrates were held at a temperature of near 700 °C. The reaction is diffusio......Wehave studied the growth and properties of SiC films on Siwafers, under ultrahigh vacuumbackground con- ditions, using a remote-, microwave excited,methane plasma as a source of active carbon and hydrogen,while the Si substrates were held at a temperature of near 700 °C. The reaction...... lowdensity of these, and are otherwise very uniform and poly- crystalline. They are characterized with scanning electron microscopy, atomic force microscopy, X-ray photo- electron spectroscopy, X-ray diffraction, and hardnessmeasurements....

  6. Optical properties of Pb2 -based aggregated phases in CsBr Thin film and single crystal matrices

    Science.gov (United States)

    Nikl, M.; Nitsch, K.; Mihokova, E.; Polak, K.; Fabeni, P.; Pazzi, G. P.; Gurioli, M.; Phani, R.; Santucci, S.; Scacco, A.; Somma, F.

    Emission characteristics of CsPbBr3 and Cs4PbBr6 aggregates in CsBr bulk and thin film matrices are reported. The emission of the former aggregated phase is peaking about 520-560 nm. It shows small Stokes shift (50 meV) related to narrow free exciton emission line of sub-nanosecond decay times. Quantum size effect was evidenced for the aggregates of 6-7 nm in diameter. The Cs4PbBr6 aggregates show emission peak at 375 nm and overall emission characteristics are similar to those of KBr: Pb, which is explained by very close local arrangement of emission centres-(PbBr6)4- octahedra-in both structures.

  7. Epitaxial single-crystal thin films of MnxTi1-xO2-δ grown on (rutile)TiO2 substrates with pulsed laser deposition: Experiment and theory

    Energy Technology Data Exchange (ETDEWEB)

    Ilton, Eugene S.; Droubay, Timothy C.; Chaka, Anne M.; Kovarik, Libor; Varga, Tamas; Arey, Bruce W.; Kerisit, Sebastien N.

    2015-02-01

    Epitaxial rutile-structured single-crystal MnxTi1-xO2-δ films were synthesized on rutile- (110) and -(001) substrates using pulsed laser deposition. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and aberration-corrected transmission electron microscopy (ACTEM). Under the present conditions, 400oC and PO2 = 20 mTorr, single crystal epitaxial thin films were grown for x = 0.13, where x is the nominal average mole fraction of Mn. In fact, arbitrarily thick films could be grown with near invariant Mn/Ti concentration profiles from the substrate/film interface to the film surface. In contrast, at x = 0.25, Mn became enriched towards the surface and a secondary nano-scale phase formed which appeared to maintain the basic rutile structure but with enhanced z-contrast in the tunnels, or tetrahedral interstitial sites. Ab initio thermodynamic calculations provided quantitative estimates for the destabilizing effect of expanding the β-MnO2 lattice parameters to those of TiO2-rutile, the stabilizing effect of diluting Mn with increasing Ti concentration, and competing reaction pathways.

  8. Distributed Feedback Laser Based on Single Crystal Perovskite

    Science.gov (United States)

    Sun, Shang; Xiao, Shumin; Song, Qinghai

    2017-06-01

    We demonstrate a single crystal perovskite based, with grating-structured photoresist on top, highly polarized distributed feedback laser. A lower laser threshold than the Fabry-Perot mode lasers from the same single crystal CH3NH3PbBr3 microplate was obtained. Single crystal CH3NH3PbBr3 microplates was synthesized with one-step solution processed precipitation method. Once the photoresist on top of the microplate was patterned with electron beam, the device was realized. This one-step fabrication process utilized the advantage of single crystal to the greatest extend. The ultra-low defect density in single crystalline microplate offer an opportunity for lower threshold lasing action compare with poly-crystal perovskite films. In the experiment, the lasing action based on the distributed feedback grating design was found with lower threshold and higher intensity than the Fabry-Perot mode lasers supported by the flat facets of the same microplate.

  9. Orientation and magnetic properties of FePt and CoPt films grown on MgO(1 1 0) single-crystal substrate by electron-beam coevaporation

    Energy Technology Data Exchange (ETDEWEB)

    Yu Minghui [Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742 (United States); Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States)], E-mail: myu1@uno.edu; Ohguchi, H.; Zambano, A.; Takeuchi, I. [Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742 (United States); Liu, J.P. [Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States); Josell, D.; Bendersky, L.A. [Metallurgy Division, Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States)

    2007-09-25

    We have studied the orientation and magnetic properties of FePt and CoPt films deposited by electron-beam co-evaporation on MgO(1 1 0) single-crystal substrates at substrate temperatures from 500 to 700 deg. C. We observed that long-range chemical ordering of the L1{sub 0} structure occurred over the entire range of substrate temperatures in FePt films and at 600 deg. C and up in CoPt films. Growth of FePt and CoPt yielded epitaxial films with cube-on-cube orientation of the pseudo-cubic L1{sub 0} lattice with respect to the cubic MgO. X-ray diffraction patterns and magnetization loops of the FePt and CoPt films revealed the existence of L1{sub 0} domains with the tetragonal c axis inclined at 45 deg. to the film plane, orientations (0 h h) and (h 0 h), as well as L1{sub 0} domains with the tetragonal c axis in the plane of the film, orientation (h h 0). The FePt and CoPt films for which X-ray diffraction indicated tetragonal phase was present all exhibited hard magnetic properties with easy axis along the [0 0 1] substrate direction as well as large in-plane magnetocrystalline anisotropy.

  10. Patterning of Perovskite Single Crystals

    KAUST Repository

    Corzo, Daniel

    2017-06-12

    As the internet-of-things hardware integration continues to develop and the requirements for electronics keep diversifying and expanding, the necessity for specialized properties other than the classical semiconductor performance becomes apparent. The success of emerging semiconductor materials depends on the manufacturability and cost as much as on the properties and performance they offer. Solution-based semiconductors are an emerging concept that offers the advantage of being compatible with large-scale manufacturing techniques and have the potential to yield high-quality electronic devices at a lower cost than currently available solutions. In this work, patterns of high-quality MAPbBr3 perovskite single crystals in specific locations are achieved through the modification of the substrate properties and solvent engineering. The fabrication of the substrates involved modifying the surface adhesion forces through functionalization with self-assembled monolayers and patterning them by photolithography processes. Spin coating and blade coating were used to deposit the perovskite solution on the modified silicon substrates. While single crystal perovskites were obtained with the modification of substrates alone, solvent engineering helped with improving the Marangoni flows in the deposited droplets by increasing the contact angle and lowering the evaporation rate, therefore controlling and improving the shape of the grown perovskite crystals. The methodology is extended to other types of perovskites such as the transparent MAPbCl3 and the lead-free MABi2I9, demonstrating the adaptability of the process. Adapting the process to electrode arrays opened up the path towards the fabrication of optoelectronic devices including photodetectors and field-effect transistors, for which the first iterations are demonstrated. Overall, manufacturing and integration techniques permitting the fabrication of single crystalline devices, such as the method in this thesis work, are

  11. Preparation of TiC single crystals

    International Nuclear Information System (INIS)

    Scheerer, B.; Fink, J.; Reichardt, W.

    1975-07-01

    TiC single crystals were prepared by vertical zone melting for measurements of the phonon dispersion by inelastic neutron scattering. The influence of the starting material and of the growing conditions on the growth of the crystal were studied. The crystals were characterized by chemical methods, EMX and neutron diffraction. It was possible to grow single crystals with a volume of up to 0.6 cm 3 and mosaic spread of less then 0.4 0 . (orig.) [de

  12. The crystal structure and twinning of neodymium gallium perovskite single crystals

    International Nuclear Information System (INIS)

    Ubizskii, S.B.; Vasylechko, L.O.; Savytskii, D.I.; Matkovskii, A.O.; Syvorotka, I.M.

    1994-01-01

    By means of X-ray structure analysis, the crystal structure of neodymium gallium perovskite (NGP) single crystals (NdGaO 3 ) being used as a substrate for HTSC film epitaxy has been refined and the position of atoms has been determined. The possibility of YBa 2 Cu 3 O 7-x film epitaxy on the plane (110) of NGP crystal as well as its advantages and pitfalls are analysed from structural data. The twinning types in the NGP crystal were established. The twinning structure of NGP substrates is found to be stable up to a temperature of 1173 K, as differentiated from the LaGaO 3 and LaAlO 3 substrates. It is intimated that the twinning in the NGP substrates oriented as (001) can result in creation of 90 degrees twin bonds in a film, and in the case of (110)-oriented plates it is possible to ignore the twinning presence in substrate completely. (author)

  13. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  14. Principles of crystallization, and methods of single crystal growth

    International Nuclear Information System (INIS)

    Chacra, T.

    2010-01-01

    Most of single crystals (monocrystals), have distinguished optical, electrical, or magnetic properties, which make from single crystals, key elements in most of technical modern devices, as they may be used as lenses, Prisms, or grating sin optical devises, or Filters in X-Ray and spectrographic devices, or conductors and semiconductors in electronic, and computer industries. Furthermore, Single crystals are used in transducer devices. Moreover, they are indispensable elements in Laser and Maser emission technology.Crystal Growth Technology (CGT), has started, and developed in the international Universities and scientific institutions, aiming at some of single crystals, which may have significant properties and industrial applications, that can attract the attention of international crystal growth centers, to adopt the industrial production and marketing of such crystals. Unfortunately, Arab universities generally, and Syrian universities specifically, do not give even the minimum interest, to this field of Science.The purpose of this work is to attract the attention of Crystallographers, Physicists and Chemists in the Arab universities and research centers to the importance of crystal growth, and to work on, in the first stage to establish simple, uncomplicated laboratories for the growth of single crystal. Such laboratories can be supplied with equipment, which are partly available or can be manufactured in the local market. Many references (Articles, Papers, Diagrams, etc..) has been studied, to conclude the most important theoretical principles of Phase transitions,especially of crystallization. The conclusions of this study, are summarized in three Principles; Thermodynamic-, Morphologic-, and Kinetic-Principles. The study is completed by a brief description of the main single crystal growth methods with sketches, of equipment used in each method, which can be considered as primary designs for the equipment, of a new crystal growth laboratory. (author)

  15. On the crystallization of amorphous germanium films

    Science.gov (United States)

    Edelman, F.; Komem, Y.; Bendayan, M.; Beserman, R.

    1993-06-01

    The incubation time for crystallization of amorphous Ge (a-Ge) films, deposited by e-gun, was studied as a function of temperature between 150 and 500°C by means of both in situ transmission electron microscopy and Raman scattering spectroscopy. The temperature dependence of t0 follows an Arrhenius curve with an activation energy of 2.0 eV for free-sustained a-Ge films. In the case where the a-Ge films were on Si 3N 4 substrate, the activation energy of the incubation process was 1.3 eV.

  16. Magnetization of correlated electron systems. MnSi thin films, CrB2 single crystals and two-dimensional electron systems in MgZnO/ZnO

    International Nuclear Information System (INIS)

    Brasse, Matthias

    2014-01-01

    Torque magnetometry at low temperature is performed to investigate the magnetic properties of MnSi thin films, of a CrB 2 single crystal and of a two-dimensional electron system (2DESs) formed at the interface of MgZnO/ZnO. The magnetic anisotropy and phase diagram of MnSi as well as information on the electronic structure of CrB 2 are obtained. The MgZnO/ZnO 2DESs exhibits the de Haas-van Alphen effect and non-equilibrium currents which are analyzed in order to determine ground state properties and excited states, respectively.

  17. Laser generation in opal-like single-crystal and heterostructure photonic crystals

    Science.gov (United States)

    Kuchyanov, A. S.; Plekhanov, A. I.

    2016-11-01

    This study describes the laser generation of a 6Zh rhodamine in artificial opals representing single-crystal and heterostructure films. The spectral and angular properties of emission and the threshold characteristics of generation are investigated. In the case where the 6Zh rhodamine was in a bulk opal, the so-called random laser generation was observed. In contrast to this, the laser generation caused by a distributed feedback inside the structure of the photonic bandgap was observed in photonic-crystal opal films.

  18. Electrically Anisotropic Layered Perovskite Single Crystal

    KAUST Repository

    Li, Ting-You

    2016-01-01

    -23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating

  19. Confinement stabilises single crystal vaterite rods.

    OpenAIRE

    Schenk, AS; Albarracin, EJ; Kim, YY; Ihli, J; Meldrum, FC

    2014-01-01

    Single-crystals of vaterite, the least-stable anhydrous polymorph of CaCO3, are rare in biogenic and synthetic systems. We here describe the synthesis of high aspect ratio single crystal vaterite rods under additive-free conditions by precipitating CaCO3 within the cylindrical pores of track-etch membranes.

  20. Comparison of functional parameters of CsI:Tl crystals and thick films

    International Nuclear Information System (INIS)

    Fedorov, A.; Gektin, A.; Lebedynskiy, A.; Mateychenko, P.; Shkoropatenko, A.

    2013-01-01

    500 mkm thick CsI:Tl columnar films can be produced using thermal evaporation in vacuum by sublimation of the same bulk crystal. Comparison of afterglow and radiation stability of deposited CsI:Tl films with source crystal was the aim of current work. It is shown that the afterglow in the films is always below its level in initial single crystal. It was ascertained that the annealing atmospheres influence the processes leading to the activator depletion of the films during the thermal processing. -- Highlights: ► Thick CsI:Tl columnar films were obtained by thermal evaporation in vacuum. ► Radiation stability of such CsI:Tl films appears to be better than that of crystal. ► CsI:Tl film parameters can be modified by annealing in different atmospheres

  1. Growth of emerald single crystals

    International Nuclear Information System (INIS)

    Bukin, G.V.; Godovikov, A.A.; Klyakin, V.A.; Sobolev, V.S.

    1986-01-01

    In addition to its use for jewelry, emerald can also be used in low-noise microwave amplifiers. The authors discuss flux crystallization of emerald and note that when emerald is grown by this method, it is desirable to use solvents which dissolve emerald with minimum deviations from congruence but at the same time with sufficient high efficiency. Emerald synthesis and crystal growth from slowly cooled solutions is discussed as another possibility. The techniques are examined. Vapor synthesis and growht of beryl crystals re reviewed and the authors experimentally study the seeded CVD crystallization of beryl from BeO, Al 2 O 3 and SiO 2 oxides, by using complex compounds as carrier agents. The color of crystals of emerald and other varieties of beryl is detemined by slelective light absorption in teh visible part of the spectrum and depends on the density and structural positions of chromphore ions: chromium, iron, vanadium, nickel, manganese and cobalt

  2. Crystal structure and magnetic susceptibility of UOSe single crystals

    International Nuclear Information System (INIS)

    Kaczorowski, D.; Muenster Univ.; Poettgen, R.; Jeitschko, W.; Gajek, Z.; Zygmunt, A.

    1993-01-01

    The crystal structure and magnetic susceptibility behaviour of UOSe single crystals have been studied. UOSe crystalizes in the tetragonal PbFC1-type structure (space group P4/nmm) with the lattice parameters: a = 390.38(5) pm and c = 698.05(9) pm. It orders antiferromagnetically at T N =100±2 K and exhibits a very strong anisotropy in the susceptibility vs temperature variation. The magnetic and thermodynamic properties of UOSe are successfully interpreted in the framework of a perturbative ab initio crystal field approach. (Author)

  3. Crystal structure and magnetic susceptibility of UOSe single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kaczorowski, D. (Polish Academy of Sciences, Wroclaw (Poland). Inst. for Low Temperature and Structure Research Muenster Univ. (Germany). Anorganisch-Chemisches Inst.); Poettgen, R.; Jeitschko, W. (Muenster Univ. (Germany). Anorganisch-Chemisches Inst.); Gajek, Z.; Zygmunt, A. (Polish Academy of Sciences, Wroclaw (Poland). Inst. for Low Temperature and Structure Research)

    1993-01-01

    The crystal structure and magnetic susceptibility behaviour of UOSe single crystals have been studied. UOSe crystalizes in the tetragonal PbFC1-type structure (space group P4/nmm) with the lattice parameters: a = 390.38(5) pm and c = 698.05(9) pm. It orders antiferromagnetically at T[sub N]=100[+-]2 K and exhibits a very strong anisotropy in the susceptibility vs temperature variation. The magnetic and thermodynamic properties of UOSe are successfully interpreted in the framework of a perturbative ab initio crystal field approach. (Author).

  4. Relaxor-PT Single Crystal Piezoelectric Sensors

    Directory of Open Access Journals (Sweden)

    Xiaoning Jiang

    2014-07-01

    Full Text Available Relaxor-PbTiO3 piezoelectric single crystals have been widely used in a broad range of electromechanical devices, including piezoelectric sensors, actuators, and transducers. This paper reviews the unique properties of these single crystals for piezoelectric sensors. Design, fabrication and characterization of various relaxor-PT single crystal piezoelectric sensors and their applications are presented and compared with their piezoelectric ceramic counterparts. Newly applicable fields and future trends of relaxor-PT sensors are also suggested in this review paper.

  5. Tension-controlled single-crystallization of copper foils for roll-to-roll synthesis of high-quality graphene films

    Science.gov (United States)

    Jo, Insu; Park, Subeom; Kim, Dongjin; San Moon, Jin; Park, Won Bae; Kim, Tae Hyeong; Hyoun Kang, Jin; Lee, Wonbae; Kim, Youngsoo; Lee, Dong Nyung; Cho, Sung-Pyo; Choi, Hyunchul; Kang, Inbyeong; Park, Jong Hyun; Lee, Jeong Soo; Hong, Byung Hee

    2018-04-01

    It has been known that the crystalline orientation of Cu substrates plays a crucial role in chemical vapor deposition (CVD) synthesis of high-quality graphene. In particular, Cu (1 1 1) surface showing the minimum lattice mismatch with graphene is expected to provide an ideal catalytic reactivity that can minimize the formation of defects, which also induces larger single-crystalline domain sizes of graphene. Usually, the Cu (1 1 1) substrates can be epitaxially grown on single-crystalline inorganic substrates or can be recrystallized by annealing for more than 12 h, which limits the cost and time-effective synthesis of graphene. Here, we demonstrate a new method to optimize the crystalline orientations of vertically suspended Cu foils by tension control during graphene growth, resulting in large-area recrystallization into Cu (1 1 1) surface as the applied tension activates the grain boundary energy of Cu and promotes its abnormal grain growth to single crystals. In addition, we found a clue that the formation of graphene cooperatively assists the recrystallization into Cu (1 1 1) by minimizing the surface energy of Cu. The domain sizes and charge carrier mobility of graphene grown on the single-crystalline Cu (1 1 1) are 5 times and ~50% increased, respectively, in comparison with those of graphene from Cu (1 0 0), indicating that the less lattice mismatch and the lower interaction energy between Cu (1 1 1) and graphene allows the growth of larger single-crystalline graphene with higher charge carrier mobility. Thus, we believe that our finding provides a crucial idea to design a roll-to-roll (R2R) graphene synthesis system where the tension control is inevitably involved, which would be of great importance for the continuous production of high-quality graphene in the future.

  6. Gallium arsenide single crystal solar cell structure and method of making

    Science.gov (United States)

    Stirn, Richard J. (Inventor)

    1983-01-01

    A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

  7. Mechanical and optical nanodevices in single-crystal quartz

    Science.gov (United States)

    Sohn, Young-Ik; Miller, Rachel; Venkataraman, Vivek; Lončar, Marko

    2017-12-01

    Single-crystal α-quartz, one of the most widely used piezoelectric materials, has enabled a wide range of timing applications. Owing to the fact that an integrated thin-film based quartz platform is not available, most of these applications rely on macroscopic, bulk crystal-based devices. Here, we show that the Faraday cage angled-etching technique can be used to realize nanoscale electromechanical and photonic devices in quartz. Using this approach, we demonstrate quartz nanomechanical cantilevers and ring resonators featuring Qs of 4900 and 8900, respectively.

  8. Single Crystals Grown Under Unconstrained Conditions

    Science.gov (United States)

    Sunagawa, Ichiro

    Based on detailed investigations on morphology (evolution and variation in external forms), surface microtopography of crystal faces (spirals and etch figures), internal morphology (growth sectors, growth banding and associated impurity partitioning) and perfection (dislocations and other lattice defects) in single crystals, we can deduce how and by what mechanism the crystal grew and experienced fluctuation in growth parameters through its growth and post-growth history under unconstrained condition. The information is useful not only in finding appropriate way to growing highly perfect and homogeneous single crystals, but also in deciphering letters sent from the depth of the Earth and the Space. It is also useful in discriminating synthetic from natural gemstones. In this chapter, available methods to obtain molecular information are briefly summarized, and actual examples to demonstrate the importance of this type of investigations are selected from both natural minerals (diamond, quartz, hematite, corundum, beryl, phlogopite) and synthetic crystals (SiC, diamond, corundum, beryl).

  9. Single Crystals of Organolead Halide Perovskites: Growth, Characterization, and Applications

    KAUST Repository

    Peng, Wei

    2017-04-01

    With the soaring advancement of organolead halide perovskite solar cells rising from a power conversion efficiency of merely 3% to more than 22% shortly in five years, researchers’ interests on this big material family have been greatly spurred. So far, both in-depth studies on the fundamental properties of organolead halide perovskites and their extended applications such as photodetectors, light emitting diodes, and lasing have been intensively reported. The great successes have been ascribed to various superior properties of organolead halide hybrid perovskites such as long carrier lifetimes, high carrier mobility, and solution-processable high quality thin films, as will be discussed in Chapter 1. Notably, most of these studies have been limited to their polycrystalline thin films. Single crystals, as a counter form of polycrystals, have no grain boundaries and higher crystallinity, and thus less defects. These characteristics gift single crystals with superior optical, electrical, and mechanical properties, which will be discussed in Chapter 2. For example, organolead halide perovskite single crystals have been reported with much longer carrier lifetimes and higher carrier mobilities, which are especially intriguing for optoelectronic applications. Besides their superior optoelectronic properties, organolead halide perovskites have shown large composition versatility, especially their organic components, which can be controlled to effectively adjust their crystal structures and further fundamental properties. Single crystals are an ideal platform for such composition-structure-property study since a uniform structure with homogeneous compositions and without distraction from grain boundaries as well as excess defects can provide unambiguously information of material properties. As a major part of work of this dissertation, explorative work on the composition-structure-property study of organic-cation-alloyed organolead halide perovskites using their single

  10. Crystal plasticity study of single crystal tungsten by indentation tests

    International Nuclear Information System (INIS)

    Yao, Weizhi

    2012-01-01

    Owing to its favorable material properties, tungsten (W) has been studied as a plasma-facing material in fusion reactors. Experiments on W heating in plasma sources and electron beam facilities have shown an intense micro-crack formation at the heated surface and sub-surface. The cracks go deep inside the irradiated sample, and often large distorted areas caused by local plastic deformation are present around the cracks. To interpret the crack-induced microscopic damage evolution process in W, one needs firstly to understand its plasticity on a single grain level, which is referred to as crystal plasticity. In this thesis, the crystal plasticity of single crystal tungsten (SCW) has been studied by spherical and Berkovich indentation tests and the finite element method with a crystal plasticity model. Appropriate values of the material parameters included in the crystal plasticity model are determined by fitting measured load-displacement curves and pile-up profiles with simulated counterparts for spherical indentation. The numerical simulations reveal excellent agreement with experiment. While the load-displacement curves and the deduced indentation hardness exhibit little sensitivity to the indented plane at small indentation depths, the orientation of slip directions within the crystals governs the development of deformation hillocks at the surface. It is found that several factors like friction, indentation depth, active slip systems, misoriented crystal orientation, misoriented sample surface and azimuthal orientation of the indenter can affect the indentation behavior of SCW. The Berkovich indentation test was also used to study the crystal plasticity of SCW after deuterium irradiation. The critical load (pop-in load) for triggering plastic deformation under the indenter is found to depend on the crystallographic orientation. The pop-in loads decrease dramatically after deuterium plasma irradiation for all three investigated crystallographic planes.

  11. Lasing in liquid crystal thin films

    Energy Technology Data Exchange (ETDEWEB)

    Palto, S. P. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)], E-mail: palto@online.ru

    2006-09-15

    A lasing condition is formulated in matrix form for optically anisotropic thin films. Lasing behavior of liquid-crystal slabs is analyzed. In particular, it is shown that if the spatial extent of a liquid crystal slab is much larger than its thickness, then laser emission is feasible not only along the normal to the slab, but also in the entire angular sector. The generated laser light can be observed experimentally as a spot or as concentric rings on a screen. The lowest lasing threshold corresponds to in-plane sliding modes leaking into the substrate. The feedback required for lasing is provided by reflection from the interfaces, rather than edges, of the liquid-crystal slab operating as a planar Fabry-Perot cavity. For cholesteric liquid crystals, it is shown that energy loss to the sliding modes leaking into the substrates and escaping through their edges is a key factor that limits the efficiency of band-edge emission along the normal to the slab.

  12. Single Crystal Diffuse Neutron Scattering

    Directory of Open Access Journals (Sweden)

    Richard Welberry

    2018-01-01

    Full Text Available Diffuse neutron scattering has become a valuable tool for investigating local structure in materials ranging from organic molecular crystals containing only light atoms to piezo-ceramics that frequently contain heavy elements. Although neutron sources will never be able to compete with X-rays in terms of the available flux the special properties of neutrons, viz. the ability to explore inelastic scattering events, the fact that scattering lengths do not vary systematically with atomic number and their ability to scatter from magnetic moments, provides strong motivation for developing neutron diffuse scattering methods. In this paper, we compare three different instruments that have been used by us to collect neutron diffuse scattering data. Two of these are on a spallation source and one on a reactor source.

  13. Shift of localized surface plasmon resonance by Ar-ion irradiation of Ag–Au bimetallic films deposited on Al{sub 2}O{sub 3} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Xuan [Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628 (Japan); Shibayama, Tamaki, E-mail: shiba@qe.eng.hokudai.ac.jp [Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Kita-13, Nishi-8, Kita-ku, Sapporo, Hokkaido 060-8628 (Japan); Yu, Ruixuan; Takayanagi, Shinya [Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628 (Japan); Watanabe, Seiichi [Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Kita-13, Nishi-8, Kita-ku, Sapporo, Hokkaido 060-8628 (Japan)

    2013-11-01

    Effects of Ar-ion induced surface nanostructuring were studied using 100 keV Ar-ion irradiation of 30 nm Ag–Au bimetallic films deposited on Al{sub 2}O{sub 3} single crystals, under irradiation fluences ranging from 5.0 × 10{sup 15} cm{sup −2} to 6.3 × 10{sup 16} cm{sup −2}. Scanning electron microscope was used to study the ion-beam-induced surface nanostructuring. As the irradiation fluence increased, dewetting of the bimetallic films on the Al{sub 2}O{sub 3} substrate was observed, and formation of isolated Ag–Au nanostructures sustained on the substrate were obtained. Next, thermal annealing was performed under high vacuum at 1073 K for 2 h; a layer of photosensitive Ag–Au alloy nanoballs partially embedded in the Al{sub 2}O{sub 3} substrate was obtained when higher fluence irradiation (>3.8 × 10{sup 16} cm{sup −2}) was used. The microstructures of the nanoballs were investigated using a transmission electron microscope, and the nanoballs were found to be single crystals with a FCC structure. In addition, photoabsorption spectra were measured, and localized surface plasmon resonance peaks were observed. With increase in the irradiation fluence, the size of the Ag–Au nanoballs on the substrate decreased, and a blue-shift of the LSPR peaks was observed. Further control of the LSPR frequency over a wide range was achieved by modifying the chemical components, and a red-shift of the LSPR peaks was observed as the Au concentration increased. In summary, ion irradiation is an effective approach toward surface nanostructuring, and the nanocomposites obtained have potential applications in optical devices.

  14. Bloch walls in a nickel single crystal

    International Nuclear Information System (INIS)

    Peters, J.; Treimer, W.

    2001-01-01

    We present a consistent theory for the dependence of the magnetic structure in bulk samples on external static magnetic fields and corresponding experimental results. We applied the theory of micromagnetism to this crystal and calculated the Bloch wall thickness as a function of external magnetic fields. The theoretical results agree well with the experimental data, so that the Bloch wall thickness of a 71 deg. nickel single crystal was definitely determined with some hundred of nanometer

  15. Lu.sub.2./sub.SiO.sub.5./sub.:Ce and Y.sub.2./sub.SiO.sub.5./sub.:Ce single crystals and single crystalline film scintillators: comparisom of the luminescent and scintillation properties

    Czech Academy of Sciences Publication Activity Database

    Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Zorenko, T.; Grinyov, B.; Sidletskiy, O.; Fedorov, A.; Mareš, Jiří A.; Nikl, Martin; Kučera, M.

    2013-01-01

    Roč. 56, SEP (2013), s. 84-89 ISSN 1350-4487. [International Conference on Luminescent Detectors and Transformers of Ionizing Radiation 2012 /8./, LUMDETR 2012. Halle (Saale), 10.09.2012-14.09.2012] R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : Lu 2 SiO 5 :Ce * Y 2 SiO 2 * single crystalline film, * single crystal * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.140, year: 2013

  16. Single crystalline metal films as substrates for graphene growth

    Energy Technology Data Exchange (ETDEWEB)

    Zeller, Patrick; Henss, Ann-Kathrin; Wintterlin, Joost [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Weinl, Michael; Schreck, Matthias [Institut fuer Physik, Universitaet Augsburg (Germany); Speck, Florian; Ostler, Markus [Lehrstuhl fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erlangen (Germany); Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Seyller, Thomas [Institut fuer Physik, Technische Universitaet Chemnitz (Germany)

    2017-11-15

    Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO){sub 4}. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. CH3NH3PbCl3 Single Crystals: Inverse Temperature Crystallization and Visible-Blind UV-Photodetector

    KAUST Repository

    Maculan, Giacomo

    2015-09-02

    Single crystals of hybrid perovskites have shown remarkably improved physical properties compared to their polycrystalline film counterparts, underscoring their importance in the further development of advanced semiconductor devices. Here we present a new method of sizeable CH3NH3PbCl3 single crystal growth based on retrograde solubility behavior of hybrid perovskites. We show, for the first time, the energy band structure, charge-carrier recombination and transport properties of single crystal CH3NH3PbCl3. The chloride-based perovskite crystals exhibit trap-state density, charge carriers concentration, mobility and diffusion length comparable with the best quality crystals of methylammonium lead iodide or bromide perovskites reported so far. The high quality of the crystal along with its suitable optical bandgap enabled us to design and build an efficient visible-blind UV-photodetector, demonstrating the potential of this material to be employed in optoelectronic applications.

  18. Friction stir welding of single crystal aluminium

    DEFF Research Database (Denmark)

    Fonda, Richard Warren; Wert, John A.; Reynolds, A.P.

    2007-01-01

    Friction stir welds were prepared in different orientations in an aluminium single crystal. The welds were quenched to preserve the microstructure surrounding the tool and then electron backscattered diffraction was used to reveal the generation of grain boundaries and the evolution...... of crystallographic texture around the tool in each weld. The extent of both dynamic recrystallisation and conventional recrystallisation varied considerably as a function of weld orientation. As the base plate begins to interact with the deformation field surrounding the tool, regions of the single crystal rotate...

  19. Organic field-effect transistors using single crystals

    International Nuclear Information System (INIS)

    Hasegawa, Tatsuo; Takeya, Jun

    2009-01-01

    Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. (topical review)

  20. Organic field-effect transistors using single crystals

    Directory of Open Access Journals (Sweden)

    Tatsuo Hasegawa and Jun Takeya

    2009-01-01

    Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  1. Crystal structures of sol-gel deposited zirconia thin films

    International Nuclear Information System (INIS)

    Bell, J.M.; Cheary, R.W.; Rice, M.; Ben-Nissan, B.; Cocking, J.L.; Johnstone, G.R.

    1992-01-01

    The authors reports on the crystal structure of zirconia thin films by high temperature x-ray diffraction. The films were deposited by sol-gel processing onto polished stainless steel substrates, and dried at 200 deg C. X-ray diffraction at temperatures between 400 deg C and 800 deg C was carried out using an APEX diffractometer with a position sensitive detector. Previous results indicated that there was a transformation between the tetragonal phase and the monoclinic phase at approximately 770 deg C. Two experiments have been carried out: temperature runs, where the structure evolution is studied as a function of temperature; and time evolution of the structure at fixed temperatures. The results for both experiments, including structural analysis of the different phases found in the thin zirconia films and an analysis of the kinetics of the phase transformation(s) from the time evolution work are presented. This will include a comparison with theories of nucleation and crystallisation in single element films. Impurity phases introduced by interaction of the zirconia with the substrate have been observed, and the effect of increasing annealing time on the substrate-film interaction will also be discussed. 17 refs., 1 tab., 3 figs

  2. Lattice effects in YVO3 single crystal

    NARCIS (Netherlands)

    Marquina, C; Sikora, M; Ibarra, MR; Nugroho, AA; Palstra, TTM

    In this paper we report on the lattice effects in the Mott insulator yttrium orthovanadate (YVO3). Linear thermal expansion and magnetostriction experiments have been performed on a single crystal, in the temperature range from 5 K to room temperature. The YVO3 orders antiferromagnetically at T-N =

  3. Antiferromagnetism in chromium alloy single crystals

    DEFF Research Database (Denmark)

    Bjerrum Møller, Hans; Trego, A.L.; Mackintosh, A.R.

    1965-01-01

    The antiferromagnetism of single crystals of dilute alloys of V, Mn and Re in Cr has been studied at 95°K and 300°K by neutron diffraction. The addition of V causes the diffraction peaks to decrease in intensity and move away from (100), while Mn and Re cause them to increase and approach (100) s...

  4. Neutron forward diffraction by single crystal prisms

    Indian Academy of Sciences (India)

    We have derived analytic expressions for the deflection as well as transmitted fraction of monochromatic neutrons forward diffracted by a single crystal prism. In the vicinity of a Bragg reflection, the neutron deflection deviates sharply from that for an amorphous prism, exhibiting three orders of magnitude greater sensitivity to ...

  5. Properties of single crystal beta''-aluminas

    International Nuclear Information System (INIS)

    Bates, J.B.; Brown, G.M.; Kaneda, T.; Brundage, W.E.; Wang, J.C.; Engstrom, H.

    1979-01-01

    Large single crystals of sodium beta''-alumina were grown by slow evaporation of Na 2 O at 1690 0 C from a mixture of Na 2 CO 3 , MgO, and Al 2 O 3 . Polarized Raman measurements were made on the Na β'' single crystals and on single crystals of Li, K, Rb, and Ag β'' prepared by ion exchange of Na β''. The low frequency Raman spectra of Na, K, Rb, and Ag β'' contained four or more bands due to vibrations of the mobile cations. These results were analyzed by assuming the spectra to be due to the normal modes of a defect cluster consisting of a cation vacancy surrounded by three cations. From model calculations, the Raman band of Na β'' at 33 cm -1 is assigned to the attempt mode for diffusion of Na + ions. The structure of a Ag β'' single crystal was investigated by neutron diffraction, and 20% of the Ag + ion sites were found to be vacant

  6. Method for manufacturing a single crystal nanowire

    NARCIS (Netherlands)

    van den Berg, Albert; Bomer, Johan G.; Carlen, Edwin; Chen, S.; Kraaijenhagen, Roderik Adriaan; Pinedo, Herbert Michael

    2013-01-01

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing

  7. Method for manufacturing a single crystal nanowire

    NARCIS (Netherlands)

    van den Berg, Albert; Bomer, Johan G.; Carlen, Edwin; Chen, S.; Kraaijenhagen, R.A.; Pinedo, Herbert Michael

    2010-01-01

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing

  8. Oriented hydroxyapatite single crystals produced by the electrodeposition method

    Energy Technology Data Exchange (ETDEWEB)

    Santos, E.A. dos, E-mail: euler@ufs.br [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France); IPCMS - Departement de Surfaces et Interfaces, 23, rue du Loess, BP 43, 67034 Strasbourg (France); Moldovan, M.S. [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France); IPCMS - Departement de Surfaces et Interfaces, 23, rue du Loess, BP 43, 67034 Strasbourg (France); Jacomine, L. [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France); Mateescu, M. [IS2M - Equipe Interaction Surface-Matiere Vivant, 15, rue Jean Starcky, BP 2488, 68057 Mulhouse (France); Werckmann, J. [IPCMS - Departement de Surfaces et Interfaces, 23, rue du Loess, BP 43, 67034 Strasbourg (France); Anselme, K. [IS2M - Equipe Interaction Surface-Matiere Vivant, 15, rue Jean Starcky, BP 2488, 68057 Mulhouse (France); Mille, P.; Pelletier, H. [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France)

    2010-05-25

    We propose here the use of cathodic electrodeposition as tool to fabricate implant coatings consisting in nano/micro single crystals of hydroxyapatite (HA), preferentially orientated along the c-axis. Coating characterization is the base of this work, where we discuss the mechanisms related to the deposition of oriented hydroxyapatite thin films. It is shown that when deposited on titanium alloys, the HA coating is constituted by two distinct regions with different morphologies: at a distance of few microns from the substrate, large HA single crystals are oriented along the c-axis and appear to grow up from a base material, consisting in an amorphous HA. This organized system has a great importance for cell investigation once the variables involved in the cell/surface interaction are reduced. The use of such systems could give a new insight on the effect of particular HA orientation on the osteoblast cells.

  9. Solution Coating of Superior Large-Area Flexible Perovskite Thin Films with Controlled Crystal Packing

    KAUST Repository

    Li, Jianbo

    2017-05-08

    Solution coating of organohalide lead perovskites offers great potential for achieving low-cost manufacturing of large-area flexible optoelectronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of crystal packing. Herein, this study reports using solution shearing to confine crystal nucleation and growth in large-area printed MAPbI3 thin films. Near single-crystalline perovskite microarrays are demonstrated with a high degree of controlled macroscopic alignment and crystal orientation, which exhibit significant improvements in optical and optoelectronic properties comparing with their random counterparts, spherulitic, and nanograined films. In particular, photodetectors based on the confined films showing intense anisotropy in charge transport are fabricated, and the device exhibits significantly improved performance in all aspects by one more orders of magnitude relative to their random counterparts. It is anticipated that perovskite films with controlled crystal packing may find applications in high-performance, large-area printed optoelectronics, and solar cells.

  10. Solution Coating of Superior Large-Area Flexible Perovskite Thin Films with Controlled Crystal Packing

    KAUST Repository

    Li, Jianbo; Liu, Yucheng; Ren, Xiaodong; Yang, Zhou; Li, Ruipeng; Su, Hang; Yang, Xiaoming; Xu, Junzhuo; Xu, Hua; Hu, Jian-Yong; Amassian, Aram; Zhao, Kui; Liu, Shengzhong Frank

    2017-01-01

    Solution coating of organohalide lead perovskites offers great potential for achieving low-cost manufacturing of large-area flexible optoelectronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of crystal packing. Herein, this study reports using solution shearing to confine crystal nucleation and growth in large-area printed MAPbI3 thin films. Near single-crystalline perovskite microarrays are demonstrated with a high degree of controlled macroscopic alignment and crystal orientation, which exhibit significant improvements in optical and optoelectronic properties comparing with their random counterparts, spherulitic, and nanograined films. In particular, photodetectors based on the confined films showing intense anisotropy in charge transport are fabricated, and the device exhibits significantly improved performance in all aspects by one more orders of magnitude relative to their random counterparts. It is anticipated that perovskite films with controlled crystal packing may find applications in high-performance, large-area printed optoelectronics, and solar cells.

  11. Radiation effects in corundum single crystals

    International Nuclear Information System (INIS)

    Gevorkyan, V.A.; Harutunyan, V.V.; Hakhverdyan, E.A.

    2005-01-01

    On the basis of new experimental results and analysis of publications it is shown that in the lattice of corundum crystals the high-energy particles create stable structural defects due to knocking out of atoms from normal sites of the anionic sublattice; this leads to the formation of F and F '+ centers as well as to other complex [Al i '+ F] type color centers. The essence of 'radiation memory' effect in corundum single crystals is that the high-energy particles irradiation, annealing at high temperatures and additional irradiation by X-rays result in the restoration of some spectral bands of the optical absorption in the range 200-650 nm

  12. Single Crystal Filters for Neutron Spectrometry

    International Nuclear Information System (INIS)

    Habib, N.

    2008-01-01

    A study of neutron transmission properties trough a large single crystals specimens of Si, Ge, Pb, Bi and sapphire at 300 K and 80 K have been made for a wide range of neutron energies. The effectiveness of such filters is given by the ratio of the total cross-section of unwanted epithermal neutrons to that the desired thermal neutron beam and by the optimum choice of the crystal orientation, its mosaic spread, thickness and temperature.Our study indicates that sapphire is significantly more effective than the others for a wide range of neutron energies

  13. Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

    Science.gov (United States)

    Takayanagi, Makoto; Tsuchiya, Takashi; Namiki, Wataru; Ueda, Shigenori; Minohara, Makoto; Horiba, Koji; Kumigashira, Hiroshi; Terabe, Kazuya; Higuchi, Tohru

    2018-03-01

    Epitaxial Ca1-xSrxVO3 (0 ≦ x ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-xSrxVO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2p3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-electron interactions in the disorder system. Therefore, the emergence of MIT can be explained by the electron-electron interactions from the chemical disorder due to the strain.

  14. Effects of quartz on crystallization behavior of mold fluxes and microstructural characteristics of flux film.

    Science.gov (United States)

    Lei, Liu; Xiuli, Han; Mingduo, Li; Di, Zhang

    2018-01-01

    Mold fluxes are mainly prepared using cement clinker, quartz, wollastonite, borax, fluorite, soda ash and other mineral materials. Quartz, as one of the most common and essential materials, was chosen for this study to analyze itseffects on crystallization temperature, critical cooling rate, crystal incubation time, crystallization ratio and phases of flux film. We used the research methods of process mineralogy with the application of the single hot thermocouple technique, heat flux simulator, polarizing microscope, X-ray diffraction, etc. Results: By increasing the quartz content from 16 mass% to 24 mass%, the crystallization temperature, critical cooling rate and crystallization ratio of flux film decreased, and the crystal incubation time was extended. Meanwhile, the mineralogical structure of the flux film changed, with a large amount of wollastonite precipitation and a significant decrease in the cuspidine content until it reached zero. This showed a steady decline in the heat transfer control capacity of the flux film. The reason for the results above is that, by increasing the quartz content, the silicon-oxygen tetrahedron network structure promoted a rise in viscosity and restrained ion migration, inhibiting crystal nucleation and growth, leading to the weakening of the crystallization and a decline in the crystallization ratio.

  15. GAGG:ce single crystalline films: New perspective scintillators for electron detection in SEM

    International Nuclear Information System (INIS)

    Bok, Jan; Lalinský, Ondřej; Hanuš, Martin; Onderišinová, Zuzana; Kelar, Jakub; Kučera, Miroslav

    2016-01-01

    Single crystal scintillators are frequently used for electron detection in scanning electron microscopy (SEM). We report gadolinium aluminum gallium garnet (GAGG:Ce) single crystalline films as a new perspective scintillators for the SEM. For the first time, the epitaxial garnet films were used in a practical application: the GAGG:Ce scintillator was incorporated into a SEM scintillation electron detector and it showed improved image quality. In order to prove the GAGG:Ce quality accurately, the scintillation properties were examined using electron beam excitation and compared with frequently used scintillators in the SEM. The results demonstrate excellent emission efficiency of the GAGG:Ce single crystalline films together with their very fast scintillation decay useful for demanding SEM applications. - Highlights: • First practical application of epitaxial garnet films demonstrated in SEM. • Improved image quality of SEM equipped with GAGG:Ce single crystalline thin film scintillator. • Scintillation properties of GAGG:Ce films compared with standard bulk crystal scintillators.

  16. Crystallization kinetics of amorphous aluminum-tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Car, T.; Radic, N. [Rugjer Boskovic Inst., Zagreb (Croatia). Div. of Mater. Sci.; Ivkov, J. [Institute of Physics, Bijenicka 46, P.O.B. 304, HR-10000 Zagreb (Croatia); Babic, E.; Tonejc, A. [Faculty of Sciences, Physics Department, Bijenicka 32, P.O.B. 162, HR-10000 Zagreb (Croatia)

    1999-01-01

    Crystallization kinetics of the amorphous Al-W thin films under non-isothermal conditions was examined by continuous in situ electrical resistance measurements in vacuum. The estimated crystallization temperature of amorphous films in the composition series of the Al{sub 82}W{sub 18} to Al{sub 62}W{sub 38} compounds ranged from 800 K to 920 K. The activation energy for the crystallization and the Avrami exponent were determined. The results indicated that the crystallization mechanism in films with higher tungsten content was a diffusion-controlled process, whereas in films with the composition similar to the stoichiometric compound (Al{sub 4}W), the interface-controlled crystallization probably occurred. (orig.) With 4 figs., 1 tab., 26 refs.

  17. Irradiation creep in zirconium single crystals

    International Nuclear Information System (INIS)

    MacEwen, S.R.; Fidleris, V.

    1976-07-01

    Two identical single crystals of crystal bar zirconium have been creep tested in reactor. Both specimens were preirradiated at low stress to a dose of about 4 x 10 23 n/m 2 (E > 1 MeV), and were then loaded to 25 MPa. The first specimen was loaded with reactor at full power, the second during a shutdown. The loading strain for both crystals was more than an order of magnitude smaller than that observed when an identical unirradiated crystal was loaded to the same stress. Both crystals exhibited periods of primary creep, after which their creep rates reached nearly constant values when the reactor was at power. During shutdowns the creep rates decreased rapidly with time. Electron microscopy revealed that the irradiation damage consisted of prismatic dislocation loops, approximately 13.5 nm in diameter. Cleared channels, identified as lying on (1010) planes, were also observed. The results are discussed in terms of the current theories for flux enhanced creep in the light of the microstructures observed. (author)

  18. Disappearing Enantiomorphs: Single Handedness in Racemate Crystals.

    Science.gov (United States)

    Parschau, Manfred; Ernst, Karl-Heinz

    2015-11-23

    Although crystallization is the most important method for the separation of enantiomers of chiral molecules in the chemical industry, the chiral recognition involved in this process is poorly understood at the molecular level. We report on the initial steps in the formation of layered racemate crystals from a racemic mixture, as observed by STM at submolecular resolution. Grown on a copper single-crystal surface, the chiral hydrocarbon heptahelicene formed chiral racemic lattice structures within the first layer. In the second layer, enantiomerically pure domains were observed, underneath which the first layer contained exclusively the other enantiomer. Hence, the system changed from a 2D racemate into a 3D racemate with enantiomerically pure layers after exceeding monolayer-saturation coverage. A chiral bias in form of a small enantiomeric excess suppressed the crystallization of one double-layer enantiomorph so that the pure minor enantiomer crystallized only in the second layer. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Single-Crystal Diamond Nanobeam Waveguide Optomechanics

    Science.gov (United States)

    Khanaliloo, Behzad; Jayakumar, Harishankar; Hryciw, Aaron C.; Lake, David P.; Kaviani, Hamidreza; Barclay, Paul E.

    2015-10-01

    Single-crystal diamond optomechanical devices have the potential to enable fundamental studies and technologies coupling mechanical vibrations to both light and electronic quantum systems. Here, we demonstrate a single-crystal diamond optomechanical system and show that it allows excitation of diamond mechanical resonances into self-oscillations with amplitude >200 nm . The resulting internal stress field is predicted to allow driving of electron spin transitions of diamond nitrogen-vacancy centers. The mechanical resonances have a quality factor >7 ×105 and can be tuned via nonlinear frequency renormalization, while the optomechanical interface has a 150 nm bandwidth and 9.5 fm /√{Hz } sensitivity. In combination, these features make this system a promising platform for interfacing light, nanomechanics, and electron spins.

  20. Single-Crystal Diamond Nanobeam Waveguide Optomechanics

    Directory of Open Access Journals (Sweden)

    Behzad Khanaliloo

    2015-12-01

    Full Text Available Single-crystal diamond optomechanical devices have the potential to enable fundamental studies and technologies coupling mechanical vibrations to both light and electronic quantum systems. Here, we demonstrate a single-crystal diamond optomechanical system and show that it allows excitation of diamond mechanical resonances into self-oscillations with amplitude >200  nm. The resulting internal stress field is predicted to allow driving of electron spin transitions of diamond nitrogen-vacancy centers. The mechanical resonances have a quality factor >7×10^{5} and can be tuned via nonlinear frequency renormalization, while the optomechanical interface has a 150 nm bandwidth and 9.5  fm/sqrt[Hz] sensitivity. In combination, these features make this system a promising platform for interfacing light, nanomechanics, and electron spins.

  1. Comparison of the luminescent properties of Lu3Al5O12:Pr crystals and films under synchrotron radiation excitation

    International Nuclear Information System (INIS)

    Zorenko, Yu.; Gorbenko, V.; Zorenko, T.; Voznyak, T.; Nizankovskiy, S.

    2016-01-01

    The work is dedicated to comparative investigation of the luminescent properties of Lu 3 Al 5 O 12 :Pr(LuAG:Pr) single crystals and single crystalline films using excitation by synchrotron radiation with an energy of 3.7–25 eV in the exciton range of LuAG host. We have found that the differences in the excitation spectra and luminescence decay kinetics of LuAG:Pr crystals and films are caused by involving the LuAl antisite defects and oxygen vacancies in the crystals and Pb 2+ flux related dopants in the films in the excitation processes of the Pr 3+ luminescence. Taking into account these differences, we have determined the energy structure of the Pr 3+ ions in LuAG host and estimated the differences in the energies of creation of excitons bound with the isolated Pr 3+ ions in LuAG:Pr films and the dipole Pr–LuAl antisite defect centers in the crystal counterpart. - Highlights: • Comparison of the luminescent properties of LuAG:Pr single crystals and films. • Superposition of the Pr 3+ and defect centers luminescence of LuAG:Pr crystal. • Different creation energies of an excitons bound with the Pr 3+ in LuAG:Pr crystals and films. • More faster decay kinetics of the Pr 3+ luminescence in LuAG:Pr films. • Low content of slow emission component in LuAG:Pr films.

  2. Single crystal spectrometer FOX at KENS

    International Nuclear Information System (INIS)

    Takahashi, M.

    2001-01-01

    Single crystal spectrometer FOX installed at H1 thermal neutron line on KENS has been renewed recently for the measurement of very weak scattering. We have installed a multidetector system of 36 linearly placed 3 He detectors with collimators instead of former four-circle diffractometer and scintillator detectors. Though the system is quite simple, a large two-dimensional reciprocal space is observed effectively with high S/N rate on new FOX. (author)

  3. AFM studies on heavy ion irradiated YBCO single crystals

    International Nuclear Information System (INIS)

    Lakhani, Archana; Marhas, M.K.; Saravanan, P.; Ganesan, V.; Srinivasan, R.; Kanjilal, D.; Mehta, G.K.; Elizabeth, Suja; Bhat, H.L.

    2000-01-01

    Atomic Force Microscopy (AFM) is extensively used to characterise the surface morphology of high energy ion irradiated single crystals of high temperature superconductor - YBCO. Our earlier systematic studies on thin films of YBCO under high energy and heavy ion irradiation shows clear evidence of ion induced sputtering or erosion, even though the effect is more on the grain boundaries. These earlier results were supported by electrical resistance measurements. In order to understand more clearly, the nature of surface modification at these high energies, AFM studies were carried out on single crystals of YBCO. Single crystals were chosen in order to see the effect on crystallites alone without interference from grain boundaries. 200 MeV gold ions were used for investigation using the facilities available at Nuclear Science Centre, New Delhi. The type of ion and the range of energies were chosen to meet the threshold for electronically mediated defect production. The results are in conformity with our earlier studies and will be described in detail in the context of electronic energy loss mediated sputtering or erosion. (author)

  4. Crystallization of calcium carbonate on radiation-grafted polyethylene films

    International Nuclear Information System (INIS)

    Hou Zhengchi; Zhang Fengying; Deng Bo; Yang Haijun; Chen Shuang; Sheng Kanglong

    2006-01-01

    In biomineralization processes, nucleation and growth of inorganic crystals can be regulated by organic template molecules. This has inspired great interest in studying mimic biomineralization. In our study, growing CaCO 3 crystals on PE films functionalized through radiation-induced grafting was attempted. PE films grafted with different functional groups of different distributions and densities were used as substrates for CaCO 3 nucleation and crystal growth from Ca(HCO 3 ) 2 supersaturated solution under different environmental conditions (e.g. additives and temperature) to study the effects and mechanisms. The grafted PE films were analyzed by ATR-FTIR and AFM, and the evolution of CaCO 3 crystal formation on the grafted PE film was characterized by SEM, FTIR, and XRD. The results indicated that heterogeneous nucleation of CaCO 3 crystals was significantly facilitated by the functional groups grafted on the surface of PE films, that the morphology of CaCO 3 crystals could be controlled by distribution and density of the grafted functional groups, and that polymorphism of CaCO 3 crystal could be regulated by selection of grafting functional groups. We believe that studying the effects of chemical structures on inorganic crystallization is of great importance since radiation-induced grafting is an effective method to graft desirable functional groups onto different polymers by selected monomers, in the endeavor of developing advanced organic/inorganic composites with high performance, with a wide availability of polymers, monomers and inorganic solutions. (authors)

  5. Development of n- and p-type Doped Perovskite Single Crystals Using Solid-State Single Crystal Growth (SSCG) Technique

    Science.gov (United States)

    2017-10-09

    for AGG should be minimal. For this purpose, the seeds for AGG may also be provided externally. This process is called the solid-state single...bonding process . Figure 31 shows (a) the growth of one large single crystal from one small single crystal seed as well as (b) the growth of one...one bi-crystal seed : One large bi-crystal can be grown from one small bi-crystal by SSCG process . Fig. 32. Diffusion bonding process for

  6. Spall response of single-crystal copper

    Science.gov (United States)

    Turley, W. D.; Fensin, S. J.; Hixson, R. S.; Jones, D. R.; La Lone, B. M.; Stevens, G. D.; Thomas, S. A.; Veeser, L. R.

    2018-02-01

    We performed a series of systematic spall experiments on single-crystal copper in an effort to determine and isolate the effects of crystal orientation, peak stress, and unloading strain rate on the tensile spall strength. Strain rates ranging from 0.62 to 2.2 × 106 s-1 and peak shock stresses in the 5-14 GPa range, with one additional experiment near 50 GPa, were explored as part of this work. Gun-driven impactors, called flyer plates, generated flat top shocks followed by spall. This work highlights the effect of crystal anisotropy on the spall strength by showing that the spall strength decreases in the following order: [100], [110], and [111]. Over the range of stresses and strain rates explored, the spall strength of [100] copper depends strongly on both the strain rate and shock stress. Except at the very highest shock stress, the results for the [100] orientation show linear relationships between the spall strength and both the applied compressive stress and the strain rate. In addition, hydrodynamic computer code simulations of the spall experiments were performed to calculate the relationship between the strain rate near the spall plane in the target and the rate of free surface velocity release during the pullback. As expected, strain rates at the spall plane are much higher than the strain rates estimated from the free surface velocity release rate. We have begun soft recovery experiments and molecular dynamics calculations to understand the unusual recompression observed in the spall signature for [100] crystals.

  7. Colour centre-free perovskite single crystals

    International Nuclear Information System (INIS)

    Petit, Pierre-Olivier; Petit, Johan; Goldner, Philippe; Viana, Bruno

    2009-01-01

    Yb 3+ :YAlO 3 (YAP) and Yb 3+ :GdAlO 3 (GAP) are interesting 1 μm high-power laser media thanks to their very good thermo-mechanical properties. However, as-grown perovskite single crystals exhibit colour centres. Parasitic thermal load generated by these centres is deleterious for high-power laser action and can lead to crystal damages. Moreover these defects decrease Yb 3+ lifetime. They are related to trapped holes on the oxygen network. In the present work, several schemes to remove colour centres are presented. Attention is focused on cerium codoping, thermal annealing under reducing atmosphere and growth of non-stoechiometric compounds.

  8. Growth of single crystals of BaFe12O19 by solid state crystal growth

    International Nuclear Information System (INIS)

    Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia

    2016-01-01

    Single crystals of BaFe 12 O 19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe 12 O 19 are buried in BaFe 12 O 19 +1 wt% BaCO 3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe 12 O 19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe 12 O 19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth. - Highlights: • Single crystals of BaFe 12 O 19 are grown by solid state crystal growth. • A single crystal up to ∼130 μm thick (c-axis direction) grows on the seed crystal. • The single crystal and surrounding ceramic matrix have similar composition. • Micro-Raman scattering shows the single crystal has the BaFe 12 O 19 structure.

  9. Novel Transrotational Solid State Order Discovered by TEM in Crystallizing Amorphous Films

    Science.gov (United States)

    Kolosov, Vladimir

    Exotic thin crystals with unexpected transrotational microstructures have been discovered by transmission electron microscopy (TEM) for crystal growth in thin (10-100 nm) amorphous films of different chemical nature (oxides, chalcogenides, metals and alloys) prepared by various methods. Primarily we use our TEM bend contour technique. The unusual phenomenon can be traced in situ in TEM column: dislocation independent regular internal bending of crystal lattice planes in a growing crystal. Such transrotation (unit cell trans lation is complicated by small rotationrealized round an axis lying in the film plane) can result in strong regular lattice orientation gradients (up to 300 degrees per micrometer) of different geometries: cylindrical, ellipsoidal, toroidal, saddle, etc. Transrotation is increasing as the film gets thinner. Transrotational crystal resembles ideal single crystal enclosed in a curved space. Transrotational micro crystals have been eventually recognized by other authors in some vital thin film materials, i.e. PCMs for memory, silicides, SrTiO3. Atomic model and possible mechanisms of the phenomenon are discussed. New transrotational nanocrystalline model of amorphous state is also proposed Support of RF Ministry of Education and Science is acknowledged.

  10. Surface and bulk crystallization of amorphous solid water films: Confirmation of “top-down” crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Chunqing; Smith, R. Scott; Kay, Bruce D.

    2016-10-01

    The crystallization kinetics of nanoscale amorphous solid water (ASW) films are investigated using temperature-programmed desorption (TPD) and reflection absorption infrared spectroscopy (RAIRS). TPD measurements are used to probe surface crystallization and RAIRS measurements are used to probe bulk crystallization. Isothermal TPD results show that surface crystallization is independent of the film thickness (from 100 to 1000 ML). Conversely, the RAIRS measurements show that the bulk crystallization time increases linearly with increasing film thickness. These results suggest that nucleation and crystallization begin at the ASW/vacuum interface and then the crystallization growth front propagates linearly into the bulk. This mechanism was confirmed by selective placement of an isotopic layer (5% D2O in H2O) at various positions in an ASW (H2O) film. In this case, the closer the isotopic layer was to the vacuum interface, the earlier the isotopic layer crystallized. These experiments provide direct evidence to confirm that ASW crystallization in vacuum proceeds by a “top-down” crystallization mechanism.

  11. Study of memory effects in polymer dispersed liquid crystal films

    International Nuclear Information System (INIS)

    Han, Jinwoo

    2006-01-01

    In this work, we have studied the memory effects in polymer dispersed liquid crystal films. We found that optical responses, such as the memory effects, of the films depended strongly on the morphology. For example, memory effects were observed for films with polymer ball morphologies; however, only weak hysteresis effects were observed for films with droplet morphologies. In particular, a stronger memory effect was observed for films with more complicated polymer ball structures. Coincidentally, T TE , the temperature at which the memory state is thermally erased, was generally higher for the films exhibiting a stronger memory effect. In addition, studies of the temporal evolution of the films show that the memory effects become stronger after films have been kept on the shelf for a period of time. This change is likely to be associated with a modification of surface anchoring properties at the LC-polymer interface.

  12. Growth and surface topography of WSe_2 single crystal

    International Nuclear Information System (INIS)

    Dixit, Vijay; Vyas, Chirag; Pataniya, Pratik; Jani, Mihir; Pathak, Vishal; Patel, Abhishek; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

    2016-01-01

    Tungsten Di-Selenide belongs to the family of TMDCs showing their potential applications in the fields of Optoelectronics and PEC solar cells. Here in the present investigation single crystals of WSe_2 were grown by Direct Vapour Transport Technique in a dual zone furnace having temperature difference of 50 K between the two zones. These single crystals were characterized by EDAX which confirms the stiochiometry of the grown crystals. Surface topography of the crystal was studied by optical micrograph showing the left handed spirals on the surface of WSe_2 crystals. Single crystalline nature of the crystals was confirmed by SAED.

  13. Crystallization and growth of Ni-Si alloy thin films on inert and on silicon substrates

    Science.gov (United States)

    Grimberg, I.; Weiss, B. Z.

    1995-04-01

    The crystallization kinetics and thermal stability of NiSi2±0.2 alloy thin films coevaporated on two different substrates were studied. The substrates were: silicon single crystal [Si(100)] and thermally oxidized silicon single crystal. In situ resistance measurements, transmission electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy were used. The postdeposition microstructure consisted of a mixture of amorphous and crystalline phases. The amorphous phase, independent of the composition, crystallizes homogeneously to NiSi2 at temperatures lower than 200 °C. The activation energy, determined in the range of 1.4-2.54 eV, depends on the type of the substrate and on the composition of the alloyed films. The activation energy for the alloys deposited on the inert substrate was found to be lower than for the alloys deposited on silicon single crystal. The lowest activation energy was obtained for nonstoichiometric NiSi2.2, the highest for NiSi2—on both substrates. The crystallization mode depends on the structure of the as-deposited films, especially the density of the existing crystalline nuclei. Substantial differences were observed in the thermal stability of the NiSi2 compound on both substrates. With the alloy films deposited on the Si substrate, only the NiSi2 phase was identified after annealing to temperatures up to 800 °C. In the films deposited on the inert substrate, NiSi and NiSi2 phases were identified when the Ni content in the alloy exceeded 33 at. %. The effects of composition and the type of substrate on the crystallization kinetics and thermal stability are discussed.

  14. The new single crystal diffractometer SC3

    International Nuclear Information System (INIS)

    Schefer, J.; Koch, M.; Keller, P.; Fischer, S.; Thut, R.

    1996-01-01

    Single crystal diffraction is a powerful method for the determination of precise structure parameters, superlattices, stress. Neutron single crystal diffraction gives additionally to X-rays information on magnetic structures, both commensurate and incommensurate, hydrogen positions, hydrogen bonding behavior and accurate bondlengths, e.g. important in cuprates. The method is therefore especially powerful if combined with X-ray diffraction results. The new instrument at SINQ has been designed for inorganic materials and is positioned at a thermal beam tube, pointing on a water scatterer. This scatterer is presently operating with H 2 O at ambient temperature, but a change to another medium at different temperature is possible. The instrument will be equipped with three area detectors, moving at fixed difference in 2Θ. each detector may be individually moved around a vertical circle (tilting angle γ), allowing to use not only 4-circle geometry in the temperature range from 1.5 to 380 K, but also any equipment from a dilution refrigerator (7 mK) to a heavy magnet. A high temperature furnace for 4-circle geometry is foreseen as a future option. (author) 6 figs., 1 tab., 7 refs

  15. The new single crystal diffractometer SC3

    Energy Technology Data Exchange (ETDEWEB)

    Schefer, J; Koch, M; Keller, P; Fischer, S; Thut, R [Lab. for Neutron Scattering ETH Zurich, Zurich (Switzerland) and Paul Scherrer Institute, Villigen (Switzerland)

    1996-11-01

    Single crystal diffraction is a powerful method for the determination of precise structure parameters, superlattices, stress. Neutron single crystal diffraction gives additionally to X-rays information on magnetic structures, both commensurate and incommensurate, hydrogen positions, hydrogen bonding behavior and accurate bondlengths, e.g. important in cuprates. The method is therefore especially powerful if combined with X-ray diffraction results. The new instrument at SINQ has been designed for inorganic materials and is positioned at a thermal beam tube, pointing on a water scatterer. This scatterer is presently operating with H{sub 2}O at ambient temperature, but a change to another medium at different temperature is possible. The instrument will be equipped with three area detectors, moving at fixed difference in 2{Theta}. each detector may be individually moved around a vertical circle (tilting angle {gamma}), allowing to use not only 4-circle geometry in the temperature range from 1.5 to 380 K, but also any equipment from a dilution refrigerator (7 mK) to a heavy magnet. A high temperature furnace for 4-circle geometry is foreseen as a future option. (author) 6 figs., 1 tab., 7 refs.

  16. Thermal shock cracking of GSO single crystal

    International Nuclear Information System (INIS)

    Miyazaki, Noriyuki; Yamamoto, Kazunari; Tamura, Takaharu; Kurashige, Kazuhisa; Ishibashi, Hiroyuki; Susa, Kenzo

    1998-01-01

    The quantitative estimation of the failure stress of a gadolinium orthosilicate (Gd 2 SiO 5 , hereafter abbreviated as GSO) single crystal due to thermal shock was investigated. A cylindrical test specimen was heated in a silicone oil bath, then subjected to thermal shock by pouring room temperature silicone oil. Cracking occurred during cooling. The heat conduction analysis was performed to obtain temperature distribution in a GSO single crystal at cracking, using the surface temperatures measured in the thermal shock cracking test. Then the thermal stress was calculated using temperature profile of the test specimen obtained from the heat conduction analysis. It is found from the results of the thermal stress analysis and the observation of the cracking in test specimens that the thermal shock cracking occurs in a cleavage plane due to the stress normal to the plane. Three-point bending tests were also performed to examine the relationship between the critical stress for thermal shock cracking and the three-point bending strength obtained from small-sized test specimens. (author)

  17. Growth of single crystals of BaFe12O19 by solid state crystal growth

    Science.gov (United States)

    Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia

    2016-10-01

    Single crystals of BaFe12O19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe12O19 are buried in BaFe12O19+1 wt% BaCO3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe12O19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe12O19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth.

  18. Investigations of morphological changes during annealing of polyethylene single crystals

    NARCIS (Netherlands)

    Tian, M.; Loos, J.

    2001-01-01

    The morphological evolution of isolated individual single crystals deposited on solid substrates was investigated during annealing experiments using in situ and ex situ atomic force microscopy techniques. The crystal morphology changed during annealing at temperatures slightly above the original

  19. Single Crystals of Organolead Halide Perovskites: Growth, Characterization, and Applications

    KAUST Repository

    Peng, Wei

    2017-01-01

    Despite their outstanding charge transport characteristics, organolead halide perovskite single crystals grown by hitherto reported crystallization methods are not suitable for most optoelectronic devices due to their small aspect ratios

  20. High-quality single crystals for neutron experiments

    Indian Academy of Sciences (India)

    studies and our collaborative research projects with other UK and international groups will be discussed. Keywords. Crystal growth; floating zone method; neutron scattering. ... of single crystals of new materials is a highly competitive business.

  1. Growth and characterization of nonlinear optical single crystals: bis ...

    Indian Academy of Sciences (India)

    Administrator

    molecules have received great attention for NLO applica- tions. However ... Figure 3. Single crystals of bis(cyclohexylammonium) terephthalate (crystal a) and cyclohexylammo- .... from ground state to higher energy states.17 Optical window ...

  2. Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

    International Nuclear Information System (INIS)

    Papon, Remi; Sharma, Subash; Shinde, Sachin M.; Vishwakarma, Riteshkumar; Tanemura, Masaki; Kalita, Golap

    2014-01-01

    Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.

  3. Solar cell structure incorporating a novel single crystal silicon material

    Science.gov (United States)

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  4. Effect of film thickness on morphological evolution in dewetting and crystallization of polystyrene/poly(ε-caprolactone) blend films.

    Science.gov (United States)

    Ma, Meng; He, Zhoukun; Yang, Jinghui; Chen, Feng; Wang, Ke; Zhang, Qin; Deng, Hua; Fu, Qiang

    2011-11-01

    In this Article, the morphological evolution in the blend thin film of polystyrene (PS)/poly(ε-caprolactone) (PCL) was investigated via mainly AFM. It was found that an enriched two-layer structure with PS at the upper layer and PCL at the bottom layer was formed during spinning coating. By changing the solution concentration, different kinds of crystal morphologies, such as finger-like, dendritic, and spherulitic-like, could be obtained at the bottom PCL layer. These different initial states led to the morphological evolution processes to be quite different from each other, so the phase separation, dewetting, and crystalline morphology of PS/PCL blend films as a function of time were studied. It was interesting to find that the morphological evolution of PS at the upper layer was largely dependent on the film thickness. For the ultrathin (15 nm) blend film, a liquid-solid/liquid-liquid dewetting-wetting process was observed, forming ribbons that rupture into discrete circular PS islands on voronoi finger-like PCL crystal. For the thick (30 nm) blend film, the liquid-liquid dewetting of the upper PS layer from the underlying adsorbed PCL layer was found, forming interconnected rim structures that rupture into discrete circular PS islands embedded in the single lamellar PCL dendritic crystal due to Rayleigh instability. For the thicker (60 nm) blend film, a two-step liquid-liquid dewetting process with regular holes decorated with dendritic PCL crystal at early annealing stage and small holes decorated with spherulite-like PCL crystal among the early dewetting holes at later annealing stage was observed. The mechanism of this unusual morphological evolution process was discussed on the basis of the entropy effect and annealing-induced phase separation.

  5. Crystallization kinetics of a-Se, part 4: thin films

    Science.gov (United States)

    Svoboda, Roman; Gutwirth, Jan; Málek, Jiří

    2014-09-01

    Differential scanning calorimetry was used to study the crystallization behaviour of selenium thin films in dependence on film thickness and deposition rate. In the current work, which is the fourth in a sequence of articles dealing with crystallization kinetics of a-Se, the non-isothermal crystallization kinetics was described in terms of the Johnson-Mehl-Avrami nucleation-growth model. Two-dimensional crystallite growth, consistent with the idea of sterically restricted crystallization in a thin layer, was confirmed for all data. It was found that neither the film thickness (tested within the 100-2350 nm range) nor the deposition rate appears to have any significant influence on the crystallization kinetics. However, the higher amount of intrinsic defects possibly produced by a higher deposition rate seems to accelerate the crystallization, shifting it towards lower temperatures. Very good correlation between the results obtained for thin films and those for fine powders was found. Based on the obtained results, interpretations of relevant literature data were made.

  6. Cyclic deformation of Nb single crystals

    International Nuclear Information System (INIS)

    Guiu, F.; Anglada, M.

    1982-01-01

    The temperature and strain-rate dependence of the cyclic flow stress of Nb single crystals with two different axial orientations has been studied at temperatures between 175 and 350 K. This dependence is found to be independent of the crystal orientation when the internal stresses are taken into account, and the results are discussed in terms of the theory of thermally activated dislocation glide. A transition temperature can be identified at about 250 K which separates two regions with different thermally activated deformation behaviour. Above this transition temperature the strain rate can be described by a stress power law, and the activation energy can be represented by a logarithmic function of the stress, as in Escaig's model of screw dislocation mobility. In the temperature range 170 to 250 K the results are also in agreement with the more recent model proposed by Seeger. The large experimental errors inherent in the values of activation enthalpy at low stresses are emphasized and taken into account in the discussion of the results. It is suggested that either impurity-kink interactions or the flexibility of the screw dislocations are responsible for the trend towards the high values of activation enthalpy measured at the low stresses. (author)

  7. Press forging of single crystal calcium fluoride

    International Nuclear Information System (INIS)

    Turk, R.R.

    1975-01-01

    Single crystals of high-purity calcium fluoride have been deformed uniaxially in an attempt to improve strength and resistance to cleavage, without impairing infrared transmission. Order of magnitude increases in strength, such as those found in forged KCl, have not been attained, but fine-grained polycrystalling material has been produced which is resistant to crystalline cleavage. Deformation rates of 10 -2 min -1 , reductions of 10 to 73 percent in height, and deformation temperatures of 550 to 1000 0 C have been used. Flexural strengths over 13,000 psi and grain sizes down to 5 μm have been obtained. Reduction of residual stress through heat treatment has been studied, and resultant techniques applied before, during, and after deformation. No increase in infrared absorption has been noted at the CO laser wavelength of 5.3 μm

  8. Electronic structure of single crystal C60

    International Nuclear Information System (INIS)

    Wu, J.; Shen, Z.X.; Dessau, D.S.; Cao, R.; Marshall, D.S.; Pianetta, P.; Lindau, I.; Yang, X.; Terry, J.; King, D.M.; Wells, B.O.; Elloway, D.; Wendt, H.R.; Brown, C.A.; Hunziker, H.; Vries, M.S. de

    1992-01-01

    We report angle-resolved photoemission data from single crystals of C 60 cleaved in UHV. Unlike the other forms of pure carbon, the valence band spectrum of C 60 consists of many sharp features that can be essentially accounted for by the quantum chemical calculations describing individual molecules. This suggests that the electronic structure of solid C 60 is mainly determined by the bonding interactions within the individual molecules. We also observe remarkable intensity modulations of the photoemission features as a function of photon energy, suggesting strong final state effects. Finally, we address the issue of the band width of the HOMO state of C 60 . We assert that the width of the photoemission peak of C 60 does not reflect the intrinsic band width because it is broadened by the non 0-0 transitions via the Franck-Condon principle. Our view point provides a possible reconciliation between these photoemission data and those measured by other techniques. (orig.)

  9. Photoluminescent properties of single crystal diamond microneedles

    Science.gov (United States)

    Malykhin, Sergey A.; Ismagilov, Rinat R.; Tuyakova, Feruza T.; Obraztsova, Ekaterina A.; Fedotov, Pavel V.; Ermakova, Anna; Siyushev, Petr; Katamadze, Konstantin G.; Jelezko, Fedor; Rakovich, Yury P.; Obraztsov, Alexander N.

    2018-01-01

    Single crystal needle-like diamonds shaped as rectangular pyramids were produced by combination of chemical vapor deposition and selective oxidation with dimensions and geometrical characteristics depending on the deposition process parameters. Photoluminescence spectra and their dependencies on wavelength of excitation radiation reveal presence of nitrogen- and silicon-vacancy color centers in the diamond crystallites. Photoluminescence spectra, intensity mapping, and fluorescence lifetime imaging microscopy indicate that silicon-vacancy centers are concentrated at the crystallites apex while nitrogen-vacancy centers are distributed over the whole crystallite. Dependence of the photoluminescence on excitation radiation intensity demonstrates saturation and allows estimation of the color centers density. The combination of structural parameters, geometry and photoluminescent characteristics are prospective for advantageous applications of these diamond crystallites in quantum information processing and optical sensing.

  10. Hydrogen Annealing Of Single-Crystal Superalloys

    Science.gov (United States)

    Smialek, James L.; Schaeffer, John C.; Murphy, Wendy

    1995-01-01

    Annealing at temperature equal to or greater than 2,200 degrees F in atmosphere of hydrogen found to increase ability of single-crystal superalloys to resist oxidation when subsequently exposed to oxidizing atmospheres at temperatures almost as high. Supperalloys in question are principal constituents of hot-stage airfoils (blades) in aircraft and ground-based turbine engines; also used in other high-temperature applications like chemical-processing plants, coal-gasification plants, petrochemical refineries, and boilers. Hydrogen anneal provides resistance to oxidation without decreasing fatigue strength and without need for coating or reactive sulfur-gettering constituents. In comparison with coating, hydrogen annealing costs less. Benefits extend to stainless steels, nickel/chromium, and nickel-base alloys, subject to same scale-adhesion and oxidation-resistance considerations, except that scale is chromia instead of alumina.

  11. EPR of CU+2:Mb single crystal

    International Nuclear Information System (INIS)

    Nascimento, O.R.; Ribeiro, S.C.; Bemski, G.

    1976-01-01

    Copper introduced into met-myoglobin crystals occupies various sites as indicated by EPR parameters. CU 2+ (A) is probably liganded to histidine A10, lysine A14 and asparagine GH4 (Banaszak, 1965) and shows super-hyperfine interaction with a single (imidazole) nitrogen. Cu 2+ (B) and Cu 2+ (C) correspond to other anisotropic sites described with lesser details. Cu 2+ (A) exhibits a transition to an isotropic form with a transition temperature of 40.5 0 C. This transition is indicative of a conformational change in myoglobin and could correspond to a motion of A helix away from the GH section. The transition temperature is 7 0 C higher than the previously reported (Atanasov, 1971) one for myoglobin in solution

  12. Chlorination of irradiated polyethylene single crystals

    International Nuclear Information System (INIS)

    Grimm, H.J.

    1978-01-01

    The chlorination of electron beam-irradiation polyethylene (PE) single crystals was studied for a range of irradiation doses, temperatures, and chlorine interaction times. The results presented show that PE chlorination was quite extensive, even in unirradiated PE single crystals at 25 0 C in the dark. Electron Spin Resonance (ESR, EPR) was used in this study in order to determine the alkyl radical concentration, decay constant, and diffusivity for (unchlorinated) specimens. An alkyl radical diffusivity D/sub a/ = 1.6 x 10 -17 cm 2 /sec at 25 0 C was estimated from ESR data and alkyl radical migration as one-dimensional unsteady-state diffusion process. In irradiated PE, chlorination occurred mainly via chain reactions which were initiated by the irradiation-produced free radicals. Chlorine content values were determined by X-ray Energy Spectroscopy (XES). It was found that the magnitude of the chlorine uptake increased with increasing dose, and decreased with decreasing temperature at constant dose. Otherwise the observed PE chlorination phenomena was quite similar for all of the doses and temperatures studied here, consisting of a two step mechanism: a fast uptake which occurred between time tCl 2 = 0 - 5 minutes and a slower, approximately first-order rate of uptake which occurred between times tCl 2 = 5 - 120 minutes. Chlorination was essentially complete by time tCl 2 = 120 minutes. The rapid uptake probably occurred in the amorphous surface zones where Cl 2 is relatively high and the second, slower step was probably attributable to Cl 2 diffusion into the crystalline regions and subsequent chlorination there. Inasmuch as the PE density decreases with increasing dose (for 1-600 Mrad), Cl 2 diffusivity was enhanced, resulting in higher chlorine uptake values at higher doses

  13. Thermopower, electrical and Hall conductivity of undoped and doped iron disilicide single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Heinrich, A; Behr, G; Griessmann, H; Teichert, S; Lange, H

    1997-07-01

    The electrical transport properties of {beta}-FeSi{sub 2} single crystals have been investigated in dependence on the purity of the source material and on doping with 3d transition metals. The transport properties included are electrical conductivity, Hall conductivity and thermopower mainly in the temperature range from 4K to 300K. The single crystals have been prepared by chemical transport reaction in a closed system with iodine as transport agent. In undoped single crystals prepared with 5N Fe both electrical conductivity and thermopower depend on the composition within the homogeneity range of {beta}-FeSi{sub 2} which is explained by different intrinsic defects at the Si-rich and Fe-rich phase boundaries. In both undoped and doped single crystals impurity band conduction is observed at low temperatures but above 100K extrinsic behavior determined by shallow impurity states. The thermopower shows between 100K and 200K a significant phonon drag contribution which depends on intrinsic defects and additional doping. The Hall resistivity is considered mainly with respect to an anomalous contribution found in p-type and n-type single crystals and thin films. In addition doped single crystals show at temperatures below about 130K an hysteresis of the Hall voltage. These results make former mobility data uncertain. Comparison will be made between the transport properties of single crystals and polycrystalline material.

  14. Applications of thin-film sandwich crystallization platforms

    Energy Technology Data Exchange (ETDEWEB)

    Axford, Danny, E-mail: danny.axford@diamond.ac.uk; Aller, Pierre; Sanchez-Weatherby, Juan; Sandy, James [Diamond Light Source, Harwell Oxford, Didcot OX11 0DE (United Kingdom)

    2016-03-24

    Crystallization via sandwiches of thin polymer films is presented and discussed. Examples are shown of protein crystallization in, and data collection from, solutions sandwiched between thin polymer films using vapour-diffusion and batch methods. The crystallization platform is optimal for both visualization and in situ data collection, with the need for traditional harvesting being eliminated. In wells constructed from the thinnest plastic and with a minimum of aqueous liquid, flash-cooling to 100 K is possible without significant ice formation and without any degradation in crystal quality. The approach is simple; it utilizes low-cost consumables but yields high-quality data with minimal sample intervention and, with the very low levels of background X-ray scatter that are observed, is optimal for microcrystals.

  15. Single-crystal growth of ceria-based materials

    International Nuclear Information System (INIS)

    Ulbrich, Gregor

    2015-01-01

    In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.

  16. Grain Boundaries Act as Solid Walls for Charge Carrier Diffusion in Large Crystal MAPI Thin Films.

    Science.gov (United States)

    Ciesielski, Richard; Schäfer, Frank; Hartmann, Nicolai F; Giesbrecht, Nadja; Bein, Thomas; Docampo, Pablo; Hartschuh, Achim

    2018-03-07

    Micro- and nanocrystalline methylammonium lead iodide (MAPI)-based thin-film solar cells today reach power conversion efficiencies of over 20%. We investigate the impact of grain boundaries on charge carrier transport in large crystal MAPI thin films using time-resolved photoluminescence (PL) microscopy and numerical model calculations. Crystal sizes in the range of several tens of micrometers allow for the spatially and time resolved study of boundary effects. Whereas long-ranged diffusive charge carrier transport is observed within single crystals, no detectable diffusive transport occurs across grain boundaries. The observed PL transients are found to crucially depend on the microscopic geometry of the crystal and the point of observation. In particular, spatially restricted diffusion of charge carriers leads to slower PL decay near crystal edges as compared to the crystal center. In contrast to many reports in the literature, our experimental results show no quenching or additional loss channels due to grain boundaries for the studied material, which thus do not negatively affect the performance of the derived thin-film devices.

  17. Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

    International Nuclear Information System (INIS)

    Huang Huan; Li Simian; Zhai Fengxiao; Wang Yang; Lai Tianshu; Wu Yiqun; Gan Fuxi

    2011-01-01

    Highlights: → We reported crystallization dynamics of a novel SiSb phase change material. → We measured optical constants of as-deposited and irradiated SiSb areas. → Optical properties of as-deposited and irradiated SiSb thin film were compared. → Crystallization of irradiated SiSb was confirmed by using AFM and micro-Raman spectra. → The heat conduction effect of lower metal layer of multi-layer films was studied. - Abstract: Transient phase change crystallization process of SiSb phase change thin films under the irradiation of picosecond (ps) laser pulse was studied using time-resolved reflectivity measurements. The ps laser pulse-crystallized domains were characterized by atomic force microscope, Raman spectra and ellipsometrical spectra measurements. A reflectivity contrast of about 15% can be achieved by ps laser pulse-induced crystallization. A minimum crystallization time of 11 ns was achieved by a low-fluence single ps laser pulse after pre-irradiation. SiSb was shown to be very promising for fast phase change memory applications.

  18. Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals

    KAUST Repository

    Shi, Dong

    2015-01-29

    The fundamental properties and ultimate performance limits of organolead trihalide MAPbX3(MA = CH3NH3 +; X = Br- or I- ) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics.We observed exceptionally low trap-state densities on the order of 109 to 1010 per cubic centimeter in MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.

  19. Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals

    KAUST Repository

    Shi, Dong; Adinolfi, Valerio; Comin, Riccardo; Yuan, Mingjian; Alarousu, Erkki; Buin, Andrei K.; Chen, Yin; Hoogland, Sjoerd H.; Rothenberger, Alexander; Katsiev, Khabiboulakh; Losovyj, Yaroslav B.; Zhang, Xin; Dowben, Peter A.; Mohammed, Omar F.; Sargent, E. H.; Bakr, Osman

    2015-01-01

    The fundamental properties and ultimate performance limits of organolead trihalide MAPbX3(MA = CH3NH3 +; X = Br- or I- ) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics.We observed exceptionally low trap-state densities on the order of 109 to 1010 per cubic centimeter in MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.

  20. Production and several properties of single crystal austenitic stainless steels

    International Nuclear Information System (INIS)

    Okamoto, Kazutaka; Yoshinari, Akira; Kaneda, Junya; Aono, Yasuhisa; Kato, Takahiko

    1998-01-01

    The single crystal austenitic stainless steels Type 316L and 304L were grown in order to improve the resistance to stress corrosion cracking (SCC) using a unidirectional solidification method which can provide the large size single crystals. The mechanical properties and the chemical properties were examined. The orientation and temperature dependence of tensile properties of the single crystals were measured. The yield stress of the single crystal steels are lower than those of the conventional polycrystal steels because of the grain boundary strength cannot be expected in the single crystal steels. The tensile properties of the single crystal austenitic stainless steel Type 316L depend strongly on the orientation. The tensile strength in orientation are about 200 MPa higher than those in the and orientations. The microstructure of the single crystal consists of a mixture of the continuous γ-austenitic single crystal matrix and the δ-ferrite phase so that the effects of the γ/δ boundaries on the chemical properties were studied. The effects of the δ-ferrite phases and the γ/δ boundaries on the resistance to SCC were examined by the creviced bent beam test (CBB test). No crack is observed in all the CBB test specimens of the single crystals, even at the γ/δ boundaries. The behavior of the radiation induced segregation (RIS) at the γ/δ boundaries in the single crystal austenitic stainless steel Type 316L was evaluated by the electron irradiation test in the high voltage electron microscope (HVEM). The depletion of oversized solute chromium at the γ/δ boundary in the single crystal austenitic stainless steel Type 316L is remarkably lower than that at the grain boundary in the polycrystalline-type 316L. (author)

  1. Chitosan-Assisted Crystallization and Film Forming of Perovskite Crystals through Biomineralization.

    Science.gov (United States)

    Yang, Yang; Sun, Chen; Yip, Hin-Lap; Sun, Runcang; Wang, Xiaohui

    2016-03-18

    Biomimetic mineralization is a powerful approach for the synthesis of advanced composite materials with hierarchical organization and controlled structure. Herein, chitosan was introduced into a perovskite precursor solution as a biopolymer additive to control the crystallization and to improve the morphology and film-forming properties of a perovskite film by way of biomineralization. The biopolymer additive was able to control the size and morphology of the perovskite crystals and helped to form smooth films. The mechanism of chitosan-mediated nucleation and growth of the perovskite crystals was explored. As a possible application, the chitosan-perovskite composite film was introduced into a planar heterojunction solar cell and increased power conversion efficiency relative to that observed for the pristine perovskite film was achieved. The biomimetic mineralization method proposed in this study provides an alternative way of preparing perovskite crystals with well-controlled morphology and properties and extends the applications of perovskite crystals in photoelectronic fields, including planar-heterojunction solar cells. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

  3. How far could energy transport within a single crystal

    Science.gov (United States)

    Zhang, Yifan; Che, Yanke; Zhao, Jincai; Steve, Granick

    Efficient transport of excitation energy over long distance is a vital process in light-harvesting systems and molecular electronics. The energy transfer distance is largely restricted by the probability decay of the exciton when hopping within a single crystal. Here, we fabricated an organic single crystal within which the energy could transfer more than 100 μm, a distance only limited by its crystal size. Our system could be regarded as a ``Sprint relay game'' performing on different surface of tracks. Photoinduced ``athletes'' (excitons) triggered intermolecular ``domino'' reaction to propagate energy for a long distance. In addition, athletes with the same ability runs much farther on smooth ideal track (single crystal assembled from merely van der Waals interaction) than bumpy mud track (crystal assembled from combination of pi-stacking, hydrogen bond and van der Waals interactions). Our finding presents new physics on enhancing energy transfer length within a single crystal. Current Affiliation: Institute for Basic Science, South Korea.

  4. Crystal structure and thin film morphology of BBL ladder polymer

    Energy Technology Data Exchange (ETDEWEB)

    Song, H H [Department of Macromolecular Science, Han Nam University, Taejon (Korea, Republic of); Fratini, A V [Department of Chemistry, University of Dayton, Dayton, OH (United States); Chabinyc, M [Department of Chemistry, University of Dayton, Dayton, OH (United States); Price, G E [University of Dayton Research, Dayton, OH (United States); Agrawal, A K [Systran Corporation, Dayton, OH (United States); Wang, C S [University of Dayton Research, Dayton, OH (United States); Burkette, J [University of Dayton Research, Dayton, OH (United States); Dudis, D S [Materials Directorate, Wright Laboratory, Wright-Patterson Air Force Base, OH (United States); Arnold, F E [Materials Directorate, Wright Laboratory, Wright-Patterson Air Force Base, OH (United States)

    1995-03-01

    Crystal structure and morphology of poly[7-oxo-7H-benz(d,e)imidazo(4`,5`:5,6)-benzimidazo(2,1-a)isoquinoline-3,4:10,11-tetrayl-10-carbonyl] (BBL) ladder-like polymer were studied. The polymer forms a two-dimensional lattice of nematic liquid crystalline structure. An orthorhombic unit cell with cell parameters of a=7.87 b=3.37 c=11.97A was determined from the fiber diffraction pattern. In thin films, the rigid chains spontaneously form a layered structure across the film thickness, but in a very unusual manner, i.e. the very large molecular plane is standing perpendicularly to the film surface plane. The results are identical to our recent results of poly(p-phenylene benzobisthiazole) (PBT) film [7]. The polymer, however, lost its anisotropic order upon extrusion into a film and resulted in a fiber-like structure. (orig.)

  5. Thermomechanical fatigue in single crystal superalloys

    Directory of Open Access Journals (Sweden)

    Moverare Johan J.

    2014-01-01

    Full Text Available Thermomechanical fatigue (TMF is a mechanism of deformation which is growing in importance due to the efficiency of modern cooling systems and the manner in which turbines and associated turbomachinery are now being operated. Unfortunately, at the present time, relatively little research has been carried out particularly on TMF of single crystal (SX superalloys, probably because the testing is significantly more challenging than the more standard creep and low cycle fatigue (LCF cases; the scarcity and relative expense of the material are additional factors. In this paper, the authors summarise their experiences on the TMF testing of SX superalloys, built up over several years. Emphasis is placed upon describing: (i the nature of the testing method, the challenges involved in ensuring that an given testing methodology is representative of engine conditions (ii the behaviour of a typical Re-containing second generation alloy such as CMSX-4, and its differing performance in out-of-phase/in-phase loading and crystallographic orientation and (iii the differences in behaviour displayed by the Re-containing alloys and new Re-free variants such as STAL15. It is demonstrated that the Re-containing superalloys are prone to different degradation mechanisms involving for example microtwinning, TCP precipitation and recrystallisation. The performance of STAL15 is not too inferior to alloys such as CMSX-4, suggesting that creep resistance itself does not correlate strongly with resistance to TMF. The implications for alloy design efforts are discussed.

  6. Magnetoresistance in terbium and holmium single crystals

    International Nuclear Information System (INIS)

    Singh, R.L.; Jericho, M.H.; Geldart, D.J.W.

    1976-01-01

    The longitudinal magnetoresistance of single crystals of terbium and holmium metals in their low-temperature ferromagnetic phase has been investigated in magnetic fields up to 80 kOe. Typical magnetoresistance isotherms exhibit a minimum which increases in depth and moves to higher fields as the temperature increases. The magnetoresistance around 1 0 K, where inelastic scattering is negligible, has been interpreted as the sum of a negative contribution due to changes in the domain structure and a positive contribution due to normal magnetoresistance. At higher temperatures, a phenomenological approach has been developed to extract the inelastic phonon and spin-wave components from the total measured magnetoresistance. In the temperature range 4--20 0 K (approximately), the phonon resistivity varies as T 3 . 7 for all samples. Approximate upper and lower bounds have been placed on the spin-wave resistivity which is also found to be described by a simple power law in this temperature range. The implications of this result for theoretical treatments of spin-wave resistivity due to s-f exchange interactions are considered. It is concluded that the role played by the magnon energy gap is far less transparent than previously suggested

  7. Czochralski method of growing single crystals. State-of-art

    International Nuclear Information System (INIS)

    Bukowski, A.; Zabierowski, P.

    1999-01-01

    Modern Czochralski method of single crystal growing has been described. The example of Czochralski process is given. The advantages that caused the rapid progress of the method have been presented. The method limitations that motivated the further research and new solutions are also presented. As the example two different ways of the technique development has been described: silicon single crystals growth in the magnetic field; continuous liquid feed of silicon crystals growth. (author)

  8. LASER PROCESSING ON SINGLE CRYSTALS BY UV PULSE LASER

    OpenAIRE

    龍見, 雅美; 佐々木, 徹; 高山, 恭宜

    2009-01-01

    Laser processing by using UV pulsed laser was carried out on single crystal such as sapphire and diamond in order to understand the fundamental laser processing on single crystal. The absorption edges of diamond and sapphire are longer and shorter than the wave length of UV laser, respectively. The processed regions by laser with near threshold power of processing show quite different state in each crystal.

  9. Azeotropic binary solvent mixtures for preparation of organic single crystals

    NARCIS (Netherlands)

    Li, X.; Kjellander, B.K.C.; Anthony, J.E.; Bastiaansen, C.W.M.; Broer, D.J.; Gelinck, G.H.

    2009-01-01

    Here, a new approach is introduced to prepare large single crystals of π-conjugated organic molecules from solution. Utilizing the concept of azeotropism, single crystals of tri-isopropylsilylethynyl pentacene (TIPS-PEN) with dimensions up to millimeters are facilely self-assembled from homogeneous

  10. Azeotropic binary solvent mixtures for preparation of organic single crystals

    NARCIS (Netherlands)

    Li, X.; Kjellander, B.K.C.; Anthony, J.E.; Bastiaansen, C.W.M.; Broer, D.J.; Gelinck, G.H.

    2009-01-01

    Here, a new approach is introduced to prepare large single crystals of p-conjugated organic molecules from solution. Utilizing the concept of azeotropism, single crystals of tri-isopropylsilylethynyl pentacene (TIPS-PEN) with dimensions up to millimeters are facilely self-assembled from homogeneous

  11. Liquid crystals for organic thin-film transistors

    Science.gov (United States)

    Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi

    2015-04-01

    Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

  12. Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications.

    Science.gov (United States)

    Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song

    2015-05-06

    Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

  13. Epitaxial growth of AlN on single crystal Mo substrates

    International Nuclear Information System (INIS)

    Okamoto, Koichiro; Inoue, Shigeru; Nakano, Takayuki; Kim, Tae-Won; Oshima, Masaharu; Fujioka, Hiroshi

    2008-01-01

    We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30 o rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30 deg. rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 deg. C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices

  14. Epitaxial growth of AlN on single crystal Mo substrates

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, Koichiro; Inoue, Shigeru [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505 (Japan); Nakano, Takayuki; Kim, Tae-Won [Kanagawa Academy of Science and Technology (KAST) KSP east 301, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213-0012 (Japan); Oshima, Masaharu [Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 (Japan); Fujioka, Hiroshi [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST) KSP east 301, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213-0012 (Japan)], E-mail: hfujioka@iis.u-tokyo.ac.jp

    2008-06-02

    We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30{sup o} rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30 deg. rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 deg. C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices.

  15. Reshock and release response of aluminum single crystal

    International Nuclear Information System (INIS)

    Huang, H.; Asay, J. R.

    2007-01-01

    Reshock and release experiments were performed on single crystal aluminum along three orientations and on polycrystalline 1050 aluminum with 50 μm grain size at shock stresses of 13 and 21 GPa to investigate the mechanisms for previously observed quasielastic recompression behavior. Particle velocity profiles obtained during reshocking both single crystals and polycrystalline aluminum from initial shock stresses of 13-21 GPa show similar quasielastic recompression behavior. Quasielastic release response is also observed in all single crystals, but the magnitude of the effect is crystal orientation dependent, with [111] and [110] exhibiting more ideal elastic-plastic release for unloading from the shocked state than for the [100] orientation and polycrystalline aluminum. The quasielastic response of 1050 aluminum is intermediate to that of the [100] and [111] orientations. Comparison of the wave profiles obtained for both unloading and reloading of single crystals and polycrystalline 1050 aluminum from shocked states suggests that the observed quasielastic response of polycrystalline aluminum results from the averaging response of single crystals for shock propagation along different orientations, and that the response of 1050 aluminum with large grain boundaries is not significantly different from the results obtained on single crystal aluminum. The yield strength of the single crystals and 1050 aluminum is found to increase with shock stress, which is consistent with previous results [H. Huang and I. R. Asay, J. Appl. Phys. 98, 033524 (2005)

  16. Unique Crystal Orientation of Poly(ethylene oxide) Thin Films by Crystallization Using a Thermal Gradient

    DEFF Research Database (Denmark)

    Gbabode, Gabin; Delvaux, Maxime; Schweicher, Guillaume

    2017-01-01

    Poly(ethylene oxide), (PEO), thin films of different thicknesses (220, 450, and 1500 nm) and molecular masses (4000, 8000, and 20000 g/mol) have been fabricated by spin-coating of methanol solutions onto glass substrates. All these samples have been recrystallized from the melt using a directional......, to significantly decrease the distribution of crystal orientation obtained after crystallization using the thermal gradient technique....

  17. High-quality bulk hybrid perovskite single crystals within minutes by inverse temperature crystallization

    KAUST Repository

    Saidaminov, Makhsud I.

    2015-07-06

    Single crystals of methylammonium lead trihalide perovskites (MAPbX3; MA=CH3NH3+, X=Br− or I−) have shown remarkably low trap density and charge transport properties; however, growth of such high-quality semiconductors is a time-consuming process. Here we present a rapid crystal growth process to obtain MAPbX3 single crystals, an order of magnitude faster than previous reports. The process is based on our observation of the substantial decrease of MAPbX3 solubility, in certain solvents, at elevated temperatures. The crystals can be both size- and shape-controlled by manipulating the different crystallization parameters. Despite the rapidity of the method, the grown crystals exhibit transport properties and trap densities comparable to the highest quality MAPbX3 reported to date. The phenomenon of inverse or retrograde solubility and its correlated inverse temperature crystallization strategy present a major step forward for advancing the field on perovskite crystallization.

  18. Excitonic polaritons of zinc diarsenide single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Syrbu, N.N., E-mail: sirbunn@yahoo.com [Technical University of Moldova, Chisinau, Republic of Moldova (Moldova, Republic of); Stamov, I.G. [T.G. Shevchenko State University of Pridnestrovie, Tiraspol, Republic of Moldova (Moldova, Republic of); Zalamai, V.V. [Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Republic of Moldova (Moldova, Republic of); Dorogan, A. [Technical University of Moldova, Chisinau, Republic of Moldova (Moldova, Republic of)

    2017-02-01

    Excitonic polaritons of ZnAs{sub 2} single crystals had been investigated. Parameters of singlet excitons with Г{sub 2}¯(z) symmetry and orthoexcitons 2Г{sub 1}¯(y)+Г{sub 2}¯(x) had been determined. Spectral dependencies of ordinary and extraordinary dispersion of refractive index had been calculated using interferential reflection and transmittance spectra. It was shown, that A excitonic series were due to hole (V{sub 1}) and electron (C{sub 1}) bands. The values of effective masses of electrons (m{sub c}{sup *}=0.10 m{sub 0}) and holes (m{sub v1}{sup *}=0.89 m{sub 0}) had been estimated. It was revealed that the hole mass m{sub v1}{sup *} changes from 1.03 m{sub 0} to 0.55 m{sub 0} at temperature increasing from 10 K up to 230 K and that the electron mass m{sub c}{sup *} does not depend on temperature. The integral absorption A (eV cm{sup −1}) of the states n=1, 2 and 3 of Г{sub 2}¯(z) excitons depends on the A{sub n}≈n{sup −3} equality, which it is characteristic for S-type excitonic functions. Temperature dependences of the integral absorption of ground states for Г{sub 2}¯(z) and Г{sub 2}¯(Ñ…) excitons differ. The ground states of B and C excitons formed by V{sub 3} – C{sub 1} and V{sub 4} – C{sub 1} bands and its parameters had been determined.

  19. Stepwise crystallization and the layered distribution in crystallization kinetics of ultra-thin poly(ethylene terephthalate) film

    Energy Technology Data Exchange (ETDEWEB)

    Zuo, Biao, E-mail: chemizuo@zstu.edu.cn, E-mail: wxinping@yahoo.com; Xu, Jianquan; Sun, Shuzheng; Liu, Yue; Yang, Juping; Zhang, Li; Wang, Xinping, E-mail: chemizuo@zstu.edu.cn, E-mail: wxinping@yahoo.com [Department of Chemistry, Key Laboratory of Advanced Textile Materials and Manufacturing Technology of the Education Ministry, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

    2016-06-21

    Crystallization is an important property of polymeric materials. In conventional viewpoint, the transformation of disordered chains into crystals is usually a spatially homogeneous process (i.e., it occurs simultaneously throughout the sample), that is, the crystallization rate at each local position within the sample is almost the same. Here, we show that crystallization of ultra-thin poly(ethylene terephthalate) (PET) films can occur in the heterogeneous way, exhibiting a stepwise crystallization process. We found that the layered distribution of glass transition dynamics of thin film modifies the corresponding crystallization behavior, giving rise to the layered distribution of the crystallization kinetics of PET films, with an 11-nm-thick surface layer having faster crystallization rate and the underlying layer showing bulk-like behavior. The layered distribution in crystallization kinetics results in a particular stepwise crystallization behavior during heating the sample, with the two cold-crystallization temperatures separated by up to 20 K. Meanwhile, interfacial interaction is crucial for the occurrence of the heterogeneous crystallization, as the thin film crystallizes simultaneously if the interfacial interaction is relatively strong. We anticipate that this mechanism of stepwise crystallization of thin polymeric films will allow new insight into the chain organization in confined environments and permit independent manipulation of localized properties of nanomaterials.

  20. Single crystal diamond detectors grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    Tuve, C.; Angelone, M.; Bellini, V.; Balducci, A.; Donato, M.G.; Faggio, G.; Marinelli, M.; Messina, G.; Milani, E.; Morgada, M.E.; Pillon, M.; Potenza, R.; Pucella, G.; Russo, G.; Santangelo, S.; Scoccia, M.; Sutera, C.; Tucciarone, A.; Verona-Rinati, G.

    2007-01-01

    The detection properties of heteropitaxial (polycrystalline, pCVD) and homoepitaxial (single crystal, scCVD) diamond films grown by microwave chemical vapor deposition (CVD) in the Laboratories of Roma 'Tor Vergata' University are reported. The pCVD diamond detectors were tested with α-particles from different sources and 12 C ions produced by 15MV Tandem accelerator at Southern National Laboratories (LNS) in Catania (Italy). pCVDs were also used to monitor 14MeV neutrons produced by the D-T plasma at Joint European Torus (JET), Culham, U.K. The limit of pCVDs is the poor energy resolution. To overcome this problem, we developed scCVD diamonds using the same reactor parameters that optimized pCVD diamonds. scCVD were grown on a low cost (100) HPHT single crystal substrate. A detector 110μm thick was tested under α-particles and under 14MeV neutron irradiation. The charge collection efficiency spectrum measured under irradiation with a triple α-particle source shows three clearly resolved peaks, with an energy resolution of about 1.1%. The measured spectra under neutron irradiation show a well separated C(n,α 0 ) 9 Be12 reaction peak with an energy spread of 0.5MeV for 14.8MeV neutrons and 0.3MeV for 14.1MeV neutrons, which are fully compatible with the energy spread of the incident neutron beams

  1. Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum.

    Science.gov (United States)

    Gao, Libo; Ren, Wencai; Xu, Huilong; Jin, Li; Wang, Zhenxing; Ma, Teng; Ma, Lai-Peng; Zhang, Zhiyong; Fu, Qiang; Peng, Lian-Mao; Bao, Xinhe; Cheng, Hui-Ming

    2012-02-28

    Large single-crystal graphene is highly desired and important for the applications of graphene in electronics, as grain boundaries between graphene grains markedly degrade its quality and properties. Here we report the growth of millimetre-sized hexagonal single-crystal graphene and graphene films joined from such grains on Pt by ambient-pressure chemical vapour deposition. We report a bubbling method to transfer these single graphene grains and graphene films to arbitrary substrate, which is nondestructive not only to graphene, but also to the Pt substrates. The Pt substrates can be repeatedly used for graphene growth. The graphene shows high crystal quality with the reported lowest wrinkle height of 0.8 nm and a carrier mobility of greater than 7,100 cm(2) V(-1) s(-1) under ambient conditions. The repeatable growth of graphene with large single-crystal grains on Pt and its nondestructive transfer may enable various applications.

  2. Diffusion and crystal growth in plasma deposed thin ITO films

    International Nuclear Information System (INIS)

    Steffen, H.; Wulff, H.; Quaas, M.; Tun, Tin Maung.; Hipple, R.

    2000-01-01

    Tin-doped indium oxide (ITO) films were deposited by means of DC-planar magnetron sputtering. A metallic In/Sn (90/10) target an Ar/O 2 gas mixture were used. The oxygen flow was varied between 0 and 2 sccm. Substrate voltages between 0 and -100 V were used. With increasing oxygen flow film structure and composition change from crystalline metallic In/Sn to amorphous ITO. Simultaneously the deposition rate decreases and the film density increases. The diffusion of oxygen into metallic In/Sn films and the amorphous-to-crystalline transformation of ITO were studied using in situ grazing incidence X-ray diffractometry (GIXRD), grazing incidence reflectometry (GIXR), and AFM. From the X-ray integral intensities diffusion constants, activation energies of the diffusion, reaction order and activation energy of the crystal growth were extracted. (authors)

  3. Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates.

    Science.gov (United States)

    Deng, Bing; Pang, Zhenqian; Chen, Shulin; Li, Xin; Meng, Caixia; Li, Jiayu; Liu, Mengxi; Wu, Juanxia; Qi, Yue; Dang, Wenhui; Yang, Hao; Zhang, Yanfeng; Zhang, Jin; Kang, Ning; Xu, Hongqi; Fu, Qiang; Qiu, Xiaohui; Gao, Peng; Wei, Yujie; Liu, Zhongfan; Peng, Hailin

    2017-12-26

    Wrinkles are ubiquitous for graphene films grown on various substrates by chemical vapor deposition at high temperature due to the strain induced by thermal mismatch between the graphene and substrates, which greatly degrades the extraordinary properties of graphene. Here we show that the wrinkle formation of graphene grown on Cu substrates is strongly dependent on the crystallographic orientations. Wrinkle-free single-crystal graphene was grown on a wafer-scale twin-boundary-free single-crystal Cu(111) thin film fabricated on sapphire substrate through strain engineering. The wrinkle-free feature of graphene originated from the relatively small thermal expansion of the Cu(111) thin film substrate and the relatively strong interfacial coupling between Cu(111) and graphene, based on the strain analyses as well as molecular dynamics simulations. Moreover, we demonstrated the transfer of an ultraflat graphene film onto target substrates from the reusable single-crystal Cu(111)/sapphire growth substrate. The wrinkle-free graphene shows enhanced electrical mobility compared to graphene with wrinkles.

  4. Crystallization of Electrodeposited Germanium Thin Film on Silicon (100).

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Matsumura, Ryo; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Muta, Shunpei; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2013-11-06

    We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD) images show that the as-deposited Ge thin film was amorphous. The crystallization of deposited Ge was achieved by rapid thermal annealing (RTA) at 980 °C for 1 s. The EBSD images confirm that the orientations of the annealed Ge are similar to that of the Si substrate. The highly intense peak of Raman spectra at 300 cm -1 corresponding to Ge-Ge vibration mode was observed, indicating good crystal quality of Ge. An additional sub peak near to 390 cm -1 corresponding to the Si-Ge vibration mode was also observed, indicating the Ge-Si mixing at Ge/Si interface. Auger electron spectroscopy (AES) reveals that the intermixing depth was around 60 nm. The calculated Si fraction from Raman spectra was found to be in good agreement with the value estimated from Ge-Si equilibrium phase diagram. The proposed technique is expected to be an effective way to crystallize Ge films for various device applications as well as to create strain at the Ge-Si interface for enhancement of mobility.

  5. Crystallization of Electrodeposited Germanium Thin Film on Silicon (100

    Directory of Open Access Journals (Sweden)

    Abdul Manaf Hashim

    2013-11-01

    Full Text Available We report the crystallization of electrodeposited germanium (Ge thin films on n-silicon (Si (100 by rapid melting process. The electrodeposition was carried out in germanium (IV chloride: propylene glycol (GeCl4:C3H8O2 electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD images show that the as-deposited Ge thin film was amorphous. The crystallization of deposited Ge was achieved by rapid thermal annealing (RTA at 980 °C for 1 s. The EBSD images confirm that the orientations of the annealed Ge are similar to that of the Si substrate. The highly intense peak of Raman spectra at 300 cm−1 corresponding to Ge-Ge vibration mode was observed, indicating good crystal quality of Ge. An additional sub peak near to 390 cm−1 corresponding to the Si-Ge vibration mode was also observed, indicating the Ge-Si mixing at Ge/Si interface. Auger electron spectroscopy (AES reveals that the intermixing depth was around 60 nm. The calculated Si fraction from Raman spectra was found to be in good agreement with the value estimated from Ge-Si equilibrium phase diagram. The proposed technique is expected to be an effective way to crystallize Ge films for various device applications as well as to create strain at the Ge-Si interface for enhancement of mobility.

  6. Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature

    International Nuclear Information System (INIS)

    Qi, Q.; Zhang, W.Z.; Shi, L.Q.; Zhang, W.Y.; Zhang, W.; Zhang, B.

    2012-01-01

    Single-crystal films of TiC (111) have been synthesized at room temperature on Al 2 O 3 (0001) substrates by radio frequency magnetron sputtering using a compound Ti–C target. The substrate temperature and bias were varied to explore the influence of deposition parameters on the crystal structure. Both Al 2 O 3 (0001) and Si (100) substrates were used for epitaxial growth of TiC films. A series of characterizations of TiC films were carried out, including Rutherford backscattering spectroscopy, X-ray diffraction, Raman and X-ray photoelectron spectroscopy. Single-crystal films of TiC (111) on the Al 2 O 3 (0001) were demonstrated. - Highlights: ► Single-crystal films of TiC (111) have been synthesized by RF magnetron sputtering. ► Both temperature and bias affect greatly the TiC crystal structure. ► Al 2 O 3 substrate is much better than Si substrate for TiC epitaxial growth. ► TiC (111) epitaxial film can be grown on Al 2 O 3 (0001) at room temperature.

  7. Ultra-large single crystals by abnormal grain growth.

    Science.gov (United States)

    Kusama, Tomoe; Omori, Toshihiro; Saito, Takashi; Kise, Sumio; Tanaka, Toyonobu; Araki, Yoshikazu; Kainuma, Ryosuke

    2017-08-25

    Producing a single crystal is expensive because of low mass productivity. Therefore, many metallic materials are being used in polycrystalline form, even though material properties are superior in a single crystal. Here we show that an extraordinarily large Cu-Al-Mn single crystal can be obtained by abnormal grain growth (AGG) induced by simple heat treatment with high mass productivity. In AGG, the sub-boundary energy introduced by cyclic heat treatment (CHT) is dominant in the driving pressure, and the grain boundary migration rate is accelerated by repeating the low-temperature CHT due to the increase of the sub-boundary energy. With such treatment, fabrication of single crystal bars 70 cm in length is achieved. This result ensures that the range of applications of shape memory alloys will spread beyond small-sized devices to large-scale components and may enable new applications of single crystals in other metallic and ceramics materials having similar microstructural features.Growing large single crystals cheaply and reliably for structural applications remains challenging. Here, the authors combine accelerated abnormal grain growth and cyclic heat treatments to grow a superelastic shape memory alloy single crystal to 70 cm.

  8. Re-crystallization of ITO films after carbon irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Usman, Muhammad, E-mail: usmanm@ncp.edu.pk [Experimental Physics Laboratories, National Centre for Physics, Shahdara Valley Road, Quaid-i-Azam University, Islamabad (Pakistan); Khan, Shahid, E-mail: shahidkhan@zju.edu.cn [State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Khan, Majid [Department of Physics, Quaid-i-Azam University, Islamabad (Pakistan); Abbas, Turab Ali [Experimental Physics Laboratories, National Centre for Physics, Shahdara Valley Road, Quaid-i-Azam University, Islamabad (Pakistan)

    2017-01-15

    Highlights: • Carbon irradiation on ITO destroys crystal structure until threshold ion fluence. • Carbon irradiation induced amorphization in ITO is recoverable at higher fluence. • Optical transmittance is reduced after carbon irradiation. • Electrical resistivity is increased after irradiation with carbon ions in ITO. • Bandgap is reduced with increasing fluence of carbon irradiation. - Abstract: 2.0 MeV carbon ion irradiation effects on Indium Tin Oxide (ITO) thin films on glass substrate are investigated. The films are irradiated with carbon ions in the fluence range of 1 × 10{sup 13} to 1 × 10{sup 15} ions/cm{sup 2}. The irradiation induced effects in ITO are compared before and after ion bombardment by systematic study of structural, optical and electrical properties of the films. The XRD results show polycrystalline nature of un-irradiated ITO films which turns to amorphous state after 1 × 10{sup 13} ions/cm{sup 2} fluence of carbon ions. Further increase in ion fluence to 1 × 10{sup 14} ions/cm{sup 2} re-crystallizes the structure and retains for even higher fluences. A gradual decrease in the electrical conductivity and transmittance of irradiated samples is observed with increasing ion fluence. The band gap of the films is observed to be decreased after carbon irradiation.

  9. Re-crystallization of ITO films after carbon irradiation

    International Nuclear Information System (INIS)

    Usman, Muhammad; Khan, Shahid; Khan, Majid; Abbas, Turab Ali

    2017-01-01

    Highlights: • Carbon irradiation on ITO destroys crystal structure until threshold ion fluence. • Carbon irradiation induced amorphization in ITO is recoverable at higher fluence. • Optical transmittance is reduced after carbon irradiation. • Electrical resistivity is increased after irradiation with carbon ions in ITO. • Bandgap is reduced with increasing fluence of carbon irradiation. - Abstract: 2.0 MeV carbon ion irradiation effects on Indium Tin Oxide (ITO) thin films on glass substrate are investigated. The films are irradiated with carbon ions in the fluence range of 1 × 10"1"3 to 1 × 10"1"5 ions/cm"2. The irradiation induced effects in ITO are compared before and after ion bombardment by systematic study of structural, optical and electrical properties of the films. The XRD results show polycrystalline nature of un-irradiated ITO films which turns to amorphous state after 1 × 10"1"3 ions/cm"2 fluence of carbon ions. Further increase in ion fluence to 1 × 10"1"4 ions/cm"2 re-crystallizes the structure and retains for even higher fluences. A gradual decrease in the electrical conductivity and transmittance of irradiated samples is observed with increasing ion fluence. The band gap of the films is observed to be decreased after carbon irradiation.

  10. Self-assembled single-phase perovskite nanocomposite thin films.

    Science.gov (United States)

    Kim, Hyun-Suk; Bi, Lei; Paik, Hanjong; Yang, Dae-Jin; Park, Yun Chang; Dionne, Gerald F; Ross, Caroline A

    2010-02-10

    Thin films of perovskite-structured oxides with general formula ABO(3) have great potential in electronic devices because of their unique properties, which include the high dielectric constant of titanates, (1) high-T(C) superconductivity in cuprates, (2) and colossal magnetoresistance in manganites. (3) These properties are intimately dependent on, and can therefore be tailored by, the microstructure, orientation, and strain state of the film. Here, we demonstrate the growth of cubic Sr(Ti,Fe)O(3) (STF) films with an unusual self-assembled nanocomposite microstructure consisting of (100) and (110)-oriented crystals, both of which grow epitaxially with respect to the Si substrate and which are therefore homoepitaxial with each other. These structures differ from previously reported self-assembled oxide nanocomposites, which consist either of two different materials (4-7) or of single-phase distorted-cubic materials that exhibit two or more variants. (8-12) Moreover, an epitaxial nanocomposite SrTiO(3) overlayer can be grown on the STF, extending the range of compositions over which this microstructure can be formed. This offers the potential for the implementation of self-organized optical/ferromagnetic or ferromagnetic/ferroelectric hybrid nanostructures integrated on technologically important Si substrates with applications in magnetooptical or spintronic devices.

  11. Spherical Nb single crystals containerlessly grown by electrostatic levitation

    International Nuclear Information System (INIS)

    Sung, Y.S.; Takeya, H.; Hirata, K.; Togano, K.

    2003-01-01

    Spherical Nb (T m =2750 K) single crystals were grown via containerless electrostatic levitation (ESL). Samples became spherical at melting in levitation and undercooled typically 300-450 K prior to nucleation. As-processed samples were still spherical without any macroscopic shape change by solidification showing a uniform dendritic surface morphology. Crystallographic {111} planes exposed in equilateral triangular shapes on the surface by preferential macroetching and spotty back-reflection Laue patterns confirm the single crystal nature of the ESL-processed Nb samples. No hysteresis in magnetization between zero field and field cooling also implies a clean defect-free condition of the spherical Nb single crystals

  12. Electroerosion impulse effect on W single crystal structure

    International Nuclear Information System (INIS)

    Aleshina, S.A.; Khvostikova, V.D.; Zolotykh, B.N.; Marchuk, A.I.

    1977-01-01

    The mechanism has been studied of brittle failure of single crystal tungsten on planes of crystallographic orientations [100], [110]; [111] in the process of electro-erosion machining by pulses of energies ranging from 1200 to 5000 μJ and of duration of 1 μs. It is shown that the electro-erosion machining of single crystal tungsten is characterized by the formation of a defect layer with a grid of microcracks which lie at a depth of approximately 80 μm. The appearance and the distribution of cracks on the surface of single crystals depends on the crystallogrpahic orientation

  13. Dielectric and baric characteristics of TlS single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Mustafaeva, S.N., E-mail: solmust@gmail.com [Institute of Physics, ANAS, G. Javid prosp. 33, Az 1143 Baku (Azerbaijan); Asadov, M.M. [Institute of Chemical Problems, ANAS, G. Javid prosp. 29, Az 1143 Baku (Azerbaijan); Ismailov, A.A. [Institute of Physics, ANAS, G. Javid prosp. 33, Az 1143 Baku (Azerbaijan)

    2014-11-15

    The investigation of the frequency dependences of the dielectric coefficients and ac-conductivity of the TlS single crystals made it possible to elucidate the nature of dielectric loss and the charge transfer mechanism. Moreover, we evaluated the density and energy spread of localized states near the Fermi level, the average hopping time and the average hopping length. It was shown that the dc-conductivity of the TlS single crystals can be controlled by varying the hydrostatic pressure. This has opened up possibilities for using TlS single crystals as active elements of pressure detectors.

  14. Growth of Ga2O3 single crystal

    OpenAIRE

    龍見, 雅美; 小池, 裕之; 市木, 伸明; Tatsumi, Masami; Koike, Hiroyuki; Ichiki, Nobuaki

    2010-01-01

    Single crystals of β-Ga2O3 for substrates of GaN LED were grown by Floating Zone(FZ) method. The transparent single crystals of 5-6 mm in diameter were reproducibly obtained by applying necking procedure and the preferential growth direction was . Many cracks were induced along the cleavage plane of (100) in slicing process, which is related to thermal stress and the growth direction. However, this preliminary growth experiments suggested that β-Ga2O3 single crystal is promising as a substrat...

  15. Resistivity distribution of silicon single crystals using codoping

    Science.gov (United States)

    Wang, Jong Hoe

    2005-07-01

    Numerous studies including continuous Czochralski method and double crucible technique have been reported on the control of macroscopic axial resistivity distribution in bulk crystal growth. The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. Wang [J. Crystal Growth 275 (2005) e73] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B-P codoping method. In this work, the basic characteristic of 8 in silicon single crystal grown using codoping method is studied and whether proposed method has advantage for the silicon crystal growth is discussed.

  16. Crystallinity of the epitaxial heterojunction of C60 on single crystal pentacene

    Science.gov (United States)

    Tsuruta, Ryohei; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Ishii, Hisao; Nakayama, Yasuo

    2017-06-01

    The structure of pn heterojunctions is an important subject in the field of organic semiconductor devices. In this work, the crystallinity of an epitaxial pn heterojunction of C60 on single crystal pentacene is investigated by non-contact mode atomic force microscopy and high-resolution grazing incidence x-ray diffraction. Analysis shows that the C60 molecules assemble into grains consisting of single crystallites on the pentacene single crystal surface. The in-plane mean crystallite size exceeds 0.1 μm, which is at least five time larger than the size of crystallites deposited onto polycrystalline pentacene thin films grown on SiO2. The results indicate that improvement in the crystal quality of the underlying molecular substrate leads to drastic promotion of the crystallinity at the organic semiconductor heterojunction.

  17. Ion irradiation enhanced crystal nucleation in amorphous Si thin films

    International Nuclear Information System (INIS)

    Im, J.S.; Atwater, H.A.

    1990-01-01

    The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe + irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500--580 degree C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high-energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV

  18. Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)], E-mail: drm@ansto.gov.au; Triani, G.; Zhang, Z. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

    2008-10-01

    A two stage process (atomic layer deposition, followed by hydrothermal treatment) for producing crystalline titania thin films at temperatures compatible with polymeric substrates (< 130 deg. C) has been assessed. Titania thin films were deposited at 80 deg. C using atomic layer deposition. They were extremely flat, uniform and almost entirely amorphous. They also contained relatively high levels of residual Cl from the precursor. After hydrothermal treatment at 120 deg. C for 1 day, > 50% of the film had crystallized. Crystallization was complete after 10 days of hydrothermal treatment. Crystallization of the film resulted in the formation of coarse grained anatase. Residual Cl was completely expelled from the film upon crystallization. As a result of the amorphous to crystalline transformation voids formed at the crystallization front. Inward and lateral crystal growth resulted in voids being localized to the film/substrate interface and crystallite perimeters resulting in pinholing. Both these phenomena resulted in films with poor adhesion and film integrity was severely compromised.

  19. Growth features of ammonium hydrogen d-tartrate single crystals

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Ammonium hydrogen d-tartrate (d-AHT) single crystals were grown in silica gel. The growth fea- ... solution (specific gravity, 1⋅04 g/cc) with d-tartaric acid solution having ... resulting in the production of crystal nuclei. The interface.

  20. On the growth of calcium tartrate tetrahydrate single crystals

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Calcium tartrate single crystals were grown using silica gel as the growth medium. Calcium for- mate mixed with formic acid was taken as the supernatant solution. It was observed that the nucleation den- sity was reduced and the size of the crystals was improved to a large extent compared to the conventional way.

  1. Single crystal magnetisation of UFe10Mo2

    International Nuclear Information System (INIS)

    Estrela, P.; Godinho, M.; Spirlet, J.C.

    1997-01-01

    Magnetisation measurements have been performed for different directions on aligned UFe 10 Mo 2 single crystals. The results confirm a basal plane anisotropy and suggest an important magnetic contribution from the uranium sublattice. (orig.)

  2. Metal Halide Perovskite Single Crystals: From Growth Process to Application

    Directory of Open Access Journals (Sweden)

    Shuigen Li

    2018-05-01

    Full Text Available As a strong competitor in the field of optoelectronic applications, organic-inorganic metal hybrid perovskites have been paid much attention because of their superior characteristics, which include broad absorption from visible to near-infrared region, tunable optical and electronic properties, high charge mobility, long exciton diffusion length and carrier recombination lifetime, etc. It is noted that perovskite single crystals show remarkably low trap-state densities and long carrier diffusion lengths, which are even comparable with the best photovoltaic-quality silicon, and thus are expected to provide better optoelectronic performance. This paper reviews the recent development of crystal growth in single-, mixed-organic-cation and fully inorganic halide perovskite single crystals, in particular the solution approach. Furthermore, the application of metal hybrid perovskite single crystals and future perspectives are also highlighted.

  3. Solution-printed organic semiconductor blends exhibiting transport properties on par with single crystals.

    Science.gov (United States)

    Niazi, Muhammad R; Li, Ruipeng; Qiang Li, Er; Kirmani, Ahmad R; Abdelsamie, Maged; Wang, Qingxiao; Pan, Wenyang; Payne, Marcia M; Anthony, John E; Smilgies, Detlef-M; Thoroddsen, Sigurdur T; Giannelis, Emmanuel P; Amassian, Aram

    2015-11-23

    Solution-printed organic semiconductors have emerged in recent years as promising contenders for roll-to-roll manufacturing of electronic and optoelectronic circuits. The stringent performance requirements for organic thin-film transistors (OTFTs) in terms of carrier mobility, switching speed, turn-on voltage and uniformity over large areas require performance currently achieved by organic single-crystal devices, but these suffer from scale-up challenges. Here we present a new method based on blade coating of a blend of conjugated small molecules and amorphous insulating polymers to produce OTFTs with consistently excellent performance characteristics (carrier mobility as high as 6.7 cm(2) V(-1) s(-1), low threshold voltages oforganic semiconductor films with transport properties and other figures of merit on par with their single-crystal counterparts.

  4. Hydrothermal syntheses and single crystal structural ...

    Indian Academy of Sciences (India)

    Unknown

    Colourless. 84 lined stainless steel bomb. After heating in a pro- grammable oven at the respective temperatures and autogenous pressures for the notified time scale, cooling was carried out on a ramp of 10°C/h to room temperature. The crystals were collected by filtration, washed with, deionized water followed by diethyl-.

  5. Nanomechanical resonant structures in single-crystal diamond

    OpenAIRE

    Burek, Michael J.; Ramos, Daniel; Patel, Parth; Frank, Ian W.; Lončar, Marko

    2013-01-01

    With its host of outstanding material properties, single-crystal diamond is an attractive material for nanomechanical systems. Here, the mechanical resonance characteristics of freestanding, single-crystal diamond nanobeams fabricated by an angled-etching methodology are reported. Resonance frequencies displayed evidence of significant compressive stress in doubly clamped diamond nanobeams, while cantilever resonance modes followed the expected inverse-length-squared trend. Q-factors on the o...

  6. Crystal growth and scintillation properties of Pr-doped SrI2 single crystals

    Science.gov (United States)

    Yokota, Yuui; Ito, Tomoki; Yoshino, Masao; Yamaji, Akihiro; Ohashi, Yuji; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira

    2018-04-01

    Pr-doped SrI2 (Pr:SrI2) single crystals with various Pr concentrations were grown by the halide-micro-pulling-down (H-μ-PD) method, and the scintillation properties were investigated. Pr1%:SrI2 single crystal with high transparency could be grown by the H-μ-PD method while Pr2, 3 and 5%:SrI2 single crystals included some cracks and opaque parts. In the photoluminescence spectrum of the Pr1%:SrI2 single crystal, an emission peak originated from the Pr3+ ion was observed around 435 nm while the radioluminescence spectra showed an emission peak around 535 nm for the undoped SrI2 and Pr:SrI2 single crystals. Light yields of Pr1, 2, 3 and 5%:SrI2 single crystals under γ-ray irradiation were 7700, 8700, 7200 and 6700 photons/MeV, respectively. Decay times of Pr1 and 2%:SrI2 single crystals under γ-ray irradiation were 55.9 and 35.0 ns of the fast decay component, and 435 and 408 ns of the slow decay component, respectively.

  7. Thin aligned organic polymer films for liquid crystal devices

    International Nuclear Information System (INIS)

    Foster, Kathryn Ellen

    1997-01-01

    This project was designed to investigate the possibility of producing alignment layers for liquid crystal devices by cross-linking thin films containing anisotropic polymer bound chromophores via irradiation with polarised ultraviolet light. Photocross-linkable polymers find use in microelectronics, liquid crystal displays, printing and UV curable lacquers and inks; so there is an increasing incentive for the development of new varieties of photopolymers in general. The synthesis and characterisation of two new photopolymers that are suitable as potential alignment layers for liquid crystal devices are reported in this thesis. The first polymer contains the anthracene chromophore attached via a spacer unit to a methacrylate backbone and the second used a similarly attached aryl azide group. Copolymers of the new monomers with methyl methacrylate were investigated to establish reactivity ratios in order to understand composition drift during polymerisation. (author)

  8. Ge-Au eutectic bonding of Ge (100) single crystals

    International Nuclear Information System (INIS)

    Knowlton, W.B.; Beeman, J.W.; Emes, J.H.; Loretto, D.; Itoh, K.M.; Haller, E.E.

    1993-01-01

    The author present preliminary results on the eutectic bonding between two (100) Ge single crystal surfaces using thin films of Au ranging from 900 angstrom/surface to 300 angstrom/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500 angstrom/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300 angstrom/surface Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200 angstrom/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150 angstrom across an interval of lmm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons

  9. Understanding surface structure and chemistry of single crystal lanthanum aluminate

    KAUST Repository

    Pramana, Stevin S.

    2017-03-02

    The surface crystallography and chemistry of a LaAlO3 single crystal, a material mainly used as a substrate to deposit technologically important thin films (e.g. for superconducting and magnetic devices), was analysed using surface X-ray diffraction and low energy ion scattering spectroscopy. The surface was determined to be terminated by Al-O species, and was significantly different from the idealised bulk structure. Termination reversal was not observed at higher temperature (600 °C) and chamber pressure of 10−10 Torr, but rather an increased Al-O occupancy occurred, which was accompanied by a larger outwards relaxation of Al from the bulk positions. Changing the oxygen pressure to 10−6 Torr enriched the Al site occupancy fraction at the outermost surface from 0.245(10) to 0.325(9). In contrast the LaO, which is located at the next sub-surface atomic layer, showed no chemical enrichment and the structural relaxation was lower than for the top AlO2 layer. Knowledge of the surface structure will aid the understanding of how and which type of interface will be formed when LaAlO3 is used as a substrate as a function of temperature and pressure, and so lead to improved design of device structures.

  10. Hydrothermal growth of PbSO4 (Anglesite) single crystal

    International Nuclear Information System (INIS)

    Kikuta, Ko-ichi; Yoneta, Yasuhito; Yogo, Toshinobu; Hirano, Shin-ichi

    1994-01-01

    Hydrothermal growth of single crystals of PbSO 4 , which is known as a natural mineral called anglesite, was investigated. Lead nitrate and nitric acid solutions were found to be useful for the growth of angle-site on the basis of the experimental results on the dissolution behavior. Relatively large euhedral single crystals bound by {210} and {101} planes were successfully grown in 1.5 mol/kg Pb(NO 3 ) 2 at 400degC and 100 MPa. Optical characterization revealed that the grown anglesite crystals can be useful for scintillators material. (author)

  11. Iron single crystal growth from a lithium-rich melt

    Science.gov (United States)

    Fix, M.; Schumann, H.; Jantz, S. G.; Breitner, F. A.; Leineweber, A.; Jesche, A.

    2018-03-01

    α -Fe single crystals of rhombic dodecahedral habit were grown from a Li84N12Fe∼3 melt. Crystals of several millimeter along a side form at temperatures around T ≈ 800 ° C. Upon further cooling the growth competes with the formation of Fe-doped Li3N. The b.c.c. structure and good sample quality of α -Fe single crystals were confirmed by X-ray and electron diffraction as well as magnetization measurements and chemical analysis. A nitrogen concentration of 90 ppm was detected by means of carrier gas hot extraction. Scanning electron microscopy did not reveal any sign of iron nitride precipitates.

  12. Growth and luminescent properties of Yb3+--doped oxide single crystals for scintillator application

    International Nuclear Information System (INIS)

    Yoshikawa, A.; Ogino, H.; Shim, J.B.; Nikl, M.; Solovieva, N.; Fukuda, T.

    2004-01-01

    Rod-shaped (Lu 1-x Yb x ) 3 Al 5 O 12 with x=0.05, 0.15, 0.30 and (Y 1-x Yb x )AlO 3 with x=0.05, 0.10, 0.30 single crystals were grown by the micro-pulling-down method. Edge-defined film-fed growth method was used to prepare (Y 0.9 Yb 0.1 )VO 4 crystal, while Ca 8 (La 1.98 Yb 0.02 )(PO 4 ) 6 O 2 crystal was grown by the Czochralski method. Luminescence of these crystals was studied with main attention paid to the charge transfer emission of Yb 3+ . Temperature tuned decay times in the time scale of units--tens of nanosecond was measured as a feature possibly interesting for an application in scintillation detectors in positron emission tomography

  13. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    KAUST Repository

    Shi, Dong

    2016-04-15

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells.

  14. Attenuation of thermal neutrons by an imperfect single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Naguib, K.; Adib, M. [National Research Centre, Cairo (Egypt). Reactor and Neutron Physics Dept.

    1996-06-14

    A semi-empirical formula is given which allows one to calculate the total thermal cross section of an imperfect single crystal as a function of crystal constants, temperature and neutron energy E, in the energy range between 3 meV and 10 eV. The formula also includes the contribution of the parasitic Bragg scattering to the total cross section that takes into account the crystal mosaic spread value and its orientation with respect to the neutron beam direction. A computer program (ISCANF) was developed to calculate the total attenuation of neutrons using the proposed formula. The ISCANF program was applied to investigate the neutron attenuation through a copper single crystal. The calculated values of the neutron transmission through the imperfect copper single crystal were fitted to the measured ones in the energy range 3-40 meV at different crystal orientations. The result of fitting shows that use of the computer program ISCANF allows one to predict the behaviour of the total cross section of an imperfect copper single crystal for the whole energy range. (author).

  15. Attenuation of thermal neutrons by an imperfect single crystal

    Science.gov (United States)

    Naguib, K.; Adib, M.

    1996-06-01

    A semi-empirical formula is given which allows one to calculate the total thermal cross section of an imperfect single crystal as a function of crystal constants, temperature and neutron energy E, in the energy range between 3 meV and 10 eV. The formula also includes the contribution of the parasitic Bragg scattering to the total cross section that takes into account the crystal mosaic spread value and its orientation with respect to the neutron beam direction. A computer program (ISCANF) was developed to calculate the total attenuation of neutrons using the proposed formula. The ISCANF program was applied to investigate the neutron attenuation through a copper single crystal. The calculated values of the neutron transmission through the imperfect copper single crystal were fitted to the measured ones in the energy range 3 - 40 meV at different crystal orientations. The result of fitting shows that use of the computer program ISCANF allows one to predict the behaviour of the total cross section of an imperfect copper single crystal for the whole energy range.

  16. Magnetic properties and crystal texture of Co alloy thin films prepared on double bias Cr

    Science.gov (United States)

    Deng, Y.; Lambeth, D. N.; Lee, L.-L.; Laughlin, D. E.

    1993-05-01

    A double layer Cr film structure has been prepared by sputter depositing Cr on single crystal Si substrates first without substrate bias and then with various substrate bias voltages. Without substrate bias, Cr{200} texture grows on Si at room temperature; thus the first Cr layer acts like a seed Cr layer with the {200} texture, and the second Cr layer, prepared with substrate bias, tends to replicate the {200} texture epitaxially. CoCrTa and CoNiCr films prepared on these double Cr underlayers, therefore, tend to have a {112¯0} texture with their c-axes oriented in the plane of the film. At the same time, the bias sputtering of the second Cr layer increases the coercivity of the subsequently deposited magnetic films significantly. Comparison studies of δM curves show that the use of the double Cr underlayers reduces the intergranular exchange interactions. The films prepared on the Si substrates have been compared with the films prepared on canasite and glass substrates. It has also been found that the magnetic properties are similar for films on canasite and on glass.

  17. Controlled growth of filamentary crystals and fabrication of single-crystal whisker probes

    International Nuclear Information System (INIS)

    Givargizov, E. I.

    2006-01-01

    The growth of filamentary crystals (whiskers) on a single-crystal substrate through the vapour-liquid-solid mechanism is described. The possibility of fabricating oriented systems of whiskers on the basis of this mechanism of crystal growth is noted. A phenomenon that is important for nanotechnology is noted: the existence of a critical diameter of whiskers, below which they are not formed. The phenomenon of radial periodic instability, which is characteristic of nanowhiskers, is described and the ways of its elimination are shown. The possibility of transforming whiskers into single-crystal tips and the growth of crystalline diamond particles at their apices are noted as important for practice. Possible applications of systems of whiskers and tips are described briefly. Particular attention is paid to the latest direction in whisker technology-fabrication of single-crystal whisker probes for atomic force microscopy

  18. Elastic properties of Ti-24Nb-4Zr-8Sn single crystals with bcc crystal structure

    International Nuclear Information System (INIS)

    Zhang, Y.W.; Li, S.J.; Obbard, E.G.; Wang, H.; Wang, S.C.; Hao, Y.L.; Yang, R.

    2011-01-01

    Research highlights: → The single crystals of Ti2448 alloy with the bcc crystal structure were prepared. → The elastic moduli and constants were measured by several resonant methods. → The crystal shows significant elastic asymmetry in tension and compression. → The crystal exhibits weak nonlinear elasticity with large elastic strain ∼2.5%. → The crystal has weak atomic interactions against crystal distortion to low symmetry. - Abstract: Single crystals of Ti2448 alloy (Ti-24Nb-4Zr-8Sn in wt.%) were grown successfully using an optical floating-zone furnace. Several kinds of resonant methods gave consistent Young's moduli of 27.1, 56.3 and 88.1 GPa and shear moduli of 34.8, 11.0 and 14.6 GPa for the , and oriented single crystals, and C 11 , C 12 and C 44 of 57.2, 36.1 and 35.9 GPa respectively. Uniaxial testing revealed asymmetrical elastic behaviors of the crystals: tension caused elastic softening with a large reversible strain of ∼4% and a stress plateau of ∼250 MPa, whereas compression resulted in gradual elastic stiffening with much smaller reversible strain. The crystals exhibited weak nonlinear elasticity with a large elastic strain of ∼2.5% and a high strength, approaching ∼20% and ∼30% of its ideal shear and ideal tensile strength respectively. The crystals showed linear elasticity with a small elastic strain of ∼1%. These elastic deformation characteristics have been interpreted in terms of weakened atomic interactions against crystal distortion to low crystal symmetry under external applied stresses. These results are consistent with the properties of polycrystalline Ti2448, including high strength, low elastic modulus, large recoverable strain and weak strengthening effect due to grain refinement.

  19. Mesoporous Zeolite Single Crystals for Catalytic Hydrocarbon Conversion

    DEFF Research Database (Denmark)

    Schmidt, I.; Christensen, Claus H.; Kustova, Marina

    2005-01-01

    Recently, mesoporous zeolite single crystals were discovered. They constitute a novel family of materials that features a combined micropore and mesopore architecture within each individual crystal. Here, we briefly summarize recent catalytic results from cracking and isomerization of alkalies......, alkylation of aromatics and present new results on isomerization of aromatics. Specifically, the shape-selective isomerization of meta-xylenc into para-xylene and ortho-xylene is studied. In all these reactions, rnesoporous zeolite single crystals prove to be unique catalysts since they provide easy...... transport to and from active sites and at the same time maintain the shape-selectivity required. Thus, all these results support the idea that the beneficial effect of the mesopores system in the mesoporous zeolite single crystals call be solely attributed to enhanced mass transport....

  20. Light emission from organic single crystals operated by electrolyte doping

    Science.gov (United States)

    Matsuki, Keiichiro; Sakanoue, Tomo; Yomogida, Yohei; Hotta, Shu; Takenobu, Taishi

    2018-03-01

    Light-emitting devices based on electrolytes, such as light-emitting electrochemical cells (LECs) and electric double-layer transistors (EDLTs), are solution-processable devices with a very simple structure. Therefore, it is necessary to apply this device structure into highly fluorescent organic materials for future printed applications. However, owing to compatibility problems between electrolytes and organic crystals, electrolyte-based single-crystal light-emitting devices have not yet been demonstrated. Here, we report on light-emitting devices based on organic single crystals and electrolytes. As the fluorescent materials, α,ω-bis(biphenylyl)terthiophene (BP3T) and 5,6,11,12-tetraphenylnaphthacene (rubrene) single crystals were selected. Using ionic liquids as electrolytes, we observed clear light emission from BP3T LECs and rubrene EDLTs.

  1. Structure of single-chain single crystals of isotactic polystyrene and their radiation resistance

    International Nuclear Information System (INIS)

    Bu Haishan; Cao Jie; Xu Shengyong; Zhang Ze

    1997-01-01

    The structure of the single-chain single crystals of isotactic polystyrene (i-PS) was investigated by electron diffraction (ED) and high resolution electron microscopy (HREM). The nano-scale single-chain single crystals were found to be very stable to electron irradiation. According to the unit cell of i-PS crystals, the reflection rings in ED pattern and the lattice fringes in HREM images could be indexed, but the lower-index diffractions were not found. It is proposed that the single-chain single crystals are very small, thus secondary electrons may be allowed to escape and radiation damage is highly reduced, and that there are less lower-index lattice planes in the single-chain single crystals to provide sufficient diffraction intensity for recording. HREM images can be achieved at room temperature in the case of single-chain single crystals because of its stability to electron irradiation, therefore, this might be a novel experimental approach to the study of crystal structure of macromolecules

  2. Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates

    KAUST Repository

    Chao, Chunying; Ren, Zhaohui; Zhu, Yihan; Xiao, Zhen; Liu, Zhenya; Xú , Gang; Mai, Jiangquan; Li, Xiang; Shen, Ge; Han, Gaorong

    2012-01-01

    Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single

  3. Carrier mobility and crystal perfection of tetracene thin film FET

    International Nuclear Information System (INIS)

    Moriguchi, N.; Nishikawa, T.; Anezaki, T.; Unno, A.; Tachibana, M.; Kojima, K.

    2006-01-01

    It is well-known that the carrier mobility of an organic field effect semiconductor (FET) depended on the crystal quality and/or the crystal perfection of the organic thin films [T.W. Kelly, D.V. Muyres, P.F. Baude, T.P. Smith, T.D. Jones, Mater. Res. Soc. Symp. Proc. 771 (2003) L6.5.1; D.J. Gundlach, J.A. Nichols, L. Zhou, T.N. Jackson, Appl. Phys. Lett. 80 (2002) 2925; H.K. Lauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, J. Appl. Phys. 92 (2002) 5259; M. Shtein, J. Mapel, J.B. Benziger, S.R. Forrest, Appl. Phys. Lett. 81 (2002) 268; D. Knipp, R.A. Street, A.R. Volkel, Appl. Phys. Lett. 82 (2003) 3907; R. Ruiz, A.C. Mayer, G.G. Malliaras, Appl. Phys. Lett. 85 (2004) 4926; R.W.I. de Boer, M.E. Gershenson, A.F. Morpurgo, V. Podzorov, Phys. Stat. Sol. A 201 (2004) 1031]. To improve the crystal quality of the thin film many efforts were made. One of the important improvements was the surface treatment of the substrate. The tetracene thin film FET (top contact structure) was fabricated using the substrate, which was coated by a spin-coating method with a 0.1% poly α-methylstyrene (AMS) solution. The crystal quality was improved by this treatment so that the carrier mobility was higher than that of non-treatment. The maximum mobility of the AMS-treated sample was obtained to be 0.12 cm 2 /V s

  4. Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

    KAUST Repository

    Oba, Tatsuya; Vacha, Martin

    2012-01-01

    We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films

  5. Single-crystal charge transfer interfaces for efficient photonic devices (Conference Presentation)

    Science.gov (United States)

    Alves, Helena; Pinto, Rui M.; Maçôas, Ermelinda M. S.; Baleizão, Carlos; Santos, Isabel C.

    2016-09-01

    Organic semiconductors have unique optical, mechanical and electronic properties that can be combined with customized chemical functionality. In the crystalline form, determinant features for electronic applications such as molecular purity, the charge mobility or the exciton diffusion length, reveal a superior performance when compared with materials in a more disordered form. Combining crystals of two different conjugated materials as even enable a new 2D electronic system. However, the use of organic single crystals in devices is still limited to a few applications, such as field-effect transistors. In 2013, we presented the first system composed of single-crystal charge transfer interfaces presenting photoconductivity behaviour. The system composed of rubrene and TCNQ has a responsivity reaching 1 A/W, corresponding to an external quantum efficiency of nearly 100%. A similar approach, with a hybrid structure of a PCBM film and rubrene single crystal also presents high responsivity and the possibility to extract excitons generated in acceptor materials. This strategy led to an extended action towards the near IR. By adequate material design and structural organisation of perylediimides, we demonstrate that is possible to improve exciton diffusion efficiency. More recently, we have successfully used the concept of charge transfer interfaces in phototransistors. These results open the possibility of using organic single-crystal interfaces in photonic applications.

  6. Mesoscale martensitic transformation in single crystals of topological defects

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiao; Martínez-González, José A.; Hernández-Ortiz, Juan P.; Ramírez-Hernández, Abelardo; Zhou, Ye; Sadati, Monirosadat; Zhang, Rui; Nealey, Paul F.; de Pablo, Juan J.

    2017-09-05

    Liquid crystal blue phases (BPs) are highly ordered at two levels. Molecules exhibit orientational order at nanometer length scales, while chirality leads to ordered arrays of doubletwisted cylinders over micrometer scales. Past studies of polycrystalline BPs were challenged by grain boundaries between randomly oriented crystalline nanodomains. Here, the nucleation of BPs is controlled with considerable precision by relying on chemically nano-patterned surfaces, leading to macroscopic single-crystal BP specimens where the dynamics of meso-crystal formation can be directly observed. Theory and experiments show that transitions between two BPs having a different network structure proceed through local re-organization of the crystalline array, without diffusion of the double twisted cylinders. In solid crystals, martensitic transformations between crystal structures involve the concerted motion of a few atoms, without diffusion. The transformation between BPs, where crystal features arise in the sub-micron regime, is found to be martensitic in nature, with the diffusion-less feature associated to the collective behavior of the double twist cylinders. Single-crystal BPs are shown to offer fertile grounds for the study of directed crystal-nucleation and the controlled growth of soft matter.

  7. Anisotropy of Single-Crystal Silicon in Nanometric Cutting.

    Science.gov (United States)

    Wang, Zhiguo; Chen, Jiaxuan; Wang, Guilian; Bai, Qingshun; Liang, Yingchun

    2017-12-01

    The anisotropy exhibited by single-crystal silicon in nanometric cutting is very significant. In order to profoundly understand the effect of crystal anisotropy on cutting behaviors, a large-scale molecular dynamics model was conducted to simulate the nanometric cutting of single-crystal silicon in the (100)[0-10], (100)[0-1-1], (110)[-110], (110)[00-1], (111)[-101], and (111)[-12-1] crystal directions in this study. The simulation results show the variations of different degrees in chip, subsurface damage, cutting force, and friction coefficient with changes in crystal plane and crystal direction. Shear deformation is the formation mechanism of subsurface damage, and the direction and complexity it forms are the primary causes that result in the anisotropy of subsurface damage. Structurally, chips could be classified into completely amorphous ones and incompletely amorphous ones containing a few crystallites. The formation mechanism of the former is high-pressure phase transformation, while the latter is obtained under the combined action of high-pressure phase transformation and cleavage. Based on an analysis of the material removal mode, it can be found that compared with the other crystal direction on the same crystal plane, the (100)[0-10], (110)[-110], and (111)[-101] directions are more suitable for ductile cutting.

  8. Nonlinear optical and electroabsorption spectra of polydiacetylene crystals and films

    Science.gov (United States)

    Mukhopadhyay, D.; Soos, Z. G.

    1996-01-01

    Vibronic structure of nonlinear optical (NLO) coefficients is developed within the Condon approximation, displaced harmonic oscillators, and crude adiabatic states. The displacements of backbone modes of conjugated polymers are taken from vibrational data on the ground and 1B excited state. NLO resonances are modeled by three excitations and transition moments taken from Pariser-Parr-Pople (PPP) theory and optimized to polydiacetylene (PDA) spectra in crystals and films, with blue-shifted 1B exciton. The joint analysis of third-harmonic-generation, two-photon absorption, and nondegenerate four-wave-mixing spectra of PDA crystals and films shows weak two-photon absorption to 2A below 1B, leading to overlapping resonances in the THG spectrum, strong two-photon absorption to an nA state some 35% above 1B, and weak Raman resonances in nondegenerate FWM spectra. The full π-π* spectrum contributes to Stark shifts and field-induced transitions, as shown by PPP results for PDA oligomers. The Stark shift dominates high-resolution electroabsorption (EA) spectra of PDA crystals below 10 K. The close correspondence between EA and the first-derivative I'(ω) of the linear absorption above the 1B exciton in PDA crystals provides an experimental separation of vibrational and electronic contributions that limits any even-parity state in this 0.5 eV interval. An oscillator-strength sum rule is applied to the convergence of PDA oligomers with increasing length, N, and the crystal oscillator strengths are obtained without adjustable parameters. The sum rule for the 1B exciton implies large transition moments to higher-energy Ag states, whose locations in recent models are contrasted to PPP results. Joint analysis of NLO and EA spectra clarifies when a few electronic excitations are sufficient, distinguishes between vibrational and electronic contributions, and supports similar π-electron interactions in conjugated molecules and polymers.

  9. Properties of laser-crystallized polycrystalline SiGe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weizman, Moshe

    2008-06-06

    In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0crystallization of amorphous Si{sub 1-x}Ge{sub x} thin films with 0.3film, which is directly coupled to a periodic compositional variation. - Amorphous SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 0crystallization method and Ge content. The defect density for solid-phase crystallized SiGe films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

  10. Observation of plastic deformation in freestanding single crystal Au nanowires

    International Nuclear Information System (INIS)

    Lee, Dongyun; Zhao Manhong; Wei Xiaoding; Chen Xi; Jun, Seong C.; Hone, James; Herbert, Erik G.; Oliver, Warren C.; Kysar, Jeffrey W.

    2006-01-01

    Freestanding single crystal nanowires of gold were fabricated from a single grain of pure gold leaf by standard lithographic techniques, with center section of 7 μm in length, 250 nm in width, and 100 nm in thickness. The ends remained anchored to a silicon substrate. The specimens were deflected via nanoindenter until plastic deformation was achieved. Nonlocalized and localized plastic deformations were observed. The resulting force-displacement curves were simulated using continuum single crystal plasticity. A set of material parameters which closely reproduce the experimental results suggests that the initial critical resolved shear stress was as high as 135 MPa

  11. Ultrathin NbN Films for Superconducting Single-Photon Detectors

    International Nuclear Information System (INIS)

    Slysz, W.; Guziewicz, M.; Borysiewicz, M.

    2011-01-01

    We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal Al 2 O 3 and Si wafers, and SiO 2 and Si 3 N 4 buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850 o C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films. (author)

  12. Photoluminescence properties of boron doped InSe single crystals

    International Nuclear Information System (INIS)

    Ertap, H.; Bacıoğlu, A.; Karabulut, M.

    2015-01-01

    Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed

  13. Crystal growth and characterization of a semiorganic nonlinear optical single crystal of gamma glycine

    International Nuclear Information System (INIS)

    Prakash, J. Thomas Joseph; Kumararaman, S.

    2008-01-01

    Gamma glycine has been successfully synthesized by taking glycine and potassium chloride and single crystals have been grown by solvent evaporation method for the first time. The grown single crystals have been analyzed with XRD, Fourier transform infrared (FTIR), and thermo gravimetric and differential thermal analyses (TG/DTA) measurements. Its mechanical behavior has been assessed by Vickers microhardness measurements. Its nonlinear optical property has been tested by Kurtz powder technique. Its optical behavior was examined by UV-vis., and found that the crystal is transparent in the region between 240 and 1200 nm. Hence, it may be very much useful for the second harmonic generation (SHG) applications

  14. Microscopic single-crystal refractometry as a function of wavelength

    International Nuclear Information System (INIS)

    DeLoach, L.D.

    1994-01-01

    The refractive indices of crystal fragments 50--200 μm in size can be measured for light wavelengths between 365 and 1100 nm with a spindle-stage refractometer. Established methods from optical crystallograpy are used to orient a crystal on the microscope spindle stage and then to match its refractive index to an immersion fluid. The refractive index of the fluid for the wavelength of light and matching temperature is determined by comparison of a reference crystal on a second spindle axis with the fluid under the match conditions. Investigations of new nonlinear-optical crystals admirably demonstrate the advantages of measuring the refractive index to ± 0.0004 in small single crystals

  15. Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains

    KAUST Repository

    Diao, Ying

    2013-06-02

    Solution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of thin-film morphology. Here, we report an approach - termed fluid-enhanced crystal engineering (FLUENCE) - that allows for a high degree of morphological control of solution-printed thin films. We designed a micropillar-patterned printing blade to induce recirculation in the ink for enhancing crystal growth, and engineered the curvature of the ink meniscus to control crystal nucleation. Using FLUENCE, we demonstrate the fast coating and patterning of millimetre-wide, centimetre-long, highly aligned single-crystalline organic semiconductor thin films. In particular, we fabricated thin films of 6,13-bis(triisopropylsilylethynyl) pentacene having non-equilibrium single-crystalline domains and an unprecedented average and maximum mobilities of 8.1±1.2 cm2 V-1 s -1 and 11 cm2 V-1 s-1. FLUENCE of organic semiconductors with non-equilibrium single-crystalline domains may find use in the fabrication of high-performance, large-area printed electronics. © 2013 Macmillan Publishers Limited. All rights reserved.

  16. Twinning processes in Cu-Al-Ni martensite single crystals investigated by neutron single crystal diffraction method

    International Nuclear Information System (INIS)

    Molnar, P.; Sittner, P.; Novak, V.; Lukas, P.

    2008-01-01

    A neutron single crystal diffraction method for inspecting the quality of martensite single crystals is introduced. True interface-free martensite single crystals are indispensable for, e.g. measurement of elastic constants of phases by ultrasonic techniques. The neutron diffraction method was used to detect and distinguish the presence of individual lattice correspondence variants of the 2H orthorhombic martensite phase in Cu-Al-Ni as well as to follow the activity of twinning processes during the deformation test on the martensite variant single crystals. When preparing the martensite single variant prism-shaped crystals by compression deformation method, typically a small fraction of second unwanted martensitic variant (compound twin) remains in the prism samples. Due to the very low stress (∼1 MPa) for the compound twinning in many shape memory alloys, it is quite difficult not only to deplete the martensite prisms of all internal interfaces but mainly to keep them in the martensite single variant state for a long time needed for further investigations

  17. Photon emission by electrons and positrons traversing thin single crystal

    International Nuclear Information System (INIS)

    Ol'chak, A.S.

    1984-01-01

    Radiation emission by planar channeled particles (electrons, positrons) in a thin single crystal of thickness L is considered. It is shown that for L approximately πb/THETAsub(L) (b is the lattice constant, THETA sub(L) the Lindhard angle) besides the main spontaneous channeling maxima there exist auxiliary interference maxima, the positions of all the maxima depending on L. The dependence of the radiation spectral intensity on crystal thickness is discussed

  18. The Taylor relation in compression deformed Ge single crystals

    International Nuclear Information System (INIS)

    Nyilas, K; Ungar, T; Dupas, C; Martin, J L; Kruml, T

    2010-01-01

    Ge single crystals are deformed in compression at 850K and the same strain rate to various extents of strains. In each sample, the internal stress is measured through stress reduction tests and the dislocation densities by X-ray measurements. Data about these two parameters follow fairly well the Taylor-Saada relation, provided a correction term is added. It probably corresponds to dislocations which are seen by X-rays, though they do not contribute to crystal hardening.

  19. Crystal growth and characterization of new semiorganic nonlinear optical single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kulshrestha, Shobha, E-mail: shobha011986@gmail.com; Shrivastava, A. K., E-mail: ashwaniaks@rediffmail.com [School of Studies in Physics, Jiwaji University Gwalior (M.P.) – 474 011 (India)

    2016-05-06

    An organic material of a L-histidine monohydrochloride single crystal was grown in a distilled water solution using the slow evaporation method at 40–45°C. The grown crystal was transparent and colourless, with a size of about 20 × 9 × 5 mm{sup 3}, obtained within a period of 21 days. The solubility of grown crystals have found out at various temperatures. The UV-visible transmittance studies show that the grown crystals have wide optical transparency in the entire visible region It is observed that the crystal has transparency window from 255nm to 700nm and its energy gap (Eg) found to be is 3.1eV. The grown crystal was subjected to powder X-ray diffraction analysis, confirming that the orthorhombic crystalline nature of the crystal. To identify the surface morphology, the as grown crystal was subjected to FE-SEM technique. The chemical composition of the grown crystal was estimated by Energy dispersive X-ray analysis. The optical behaviour of the grown crystal was analyzed by PL study.

  20. Application of Thin Films of Conjugated Polymers in Novel LED's and Liquid Crystal 'Light Valves'

    National Research Council Canada - National Science Library

    MacDiarmid, A

    1997-01-01

    .... Flexible, completely organic polymer dispersed liquid crystal light valves have been fabricated from transparent plastic substrates on which a conducting film of polypyrrole has been deposited...

  1. Characteristics of trapped electrons and electron traps in single crystals

    International Nuclear Information System (INIS)

    Budzinski, E.E.; Potter, W.R.; Potienko, G.; Box, H.C.

    1979-01-01

    Two additional carbohydrates are reported whose crystal structures trap electrons intermolecularly in single crystals x irradiated at low temperature, namely sucrose and rhamnose. Five carbohydrate and polyhydroxy compounds are now known which exhibit this phenomenon. The following characteristics of the phenomenon were investigated: (1) the hyperfine couplings of the electron with protons of the polarized hydroxy groups forming the trap; (2) the distances between these protons and the trapped electron; (3) the spin density of the electron at the protons and (4) the relative stabilities of the electron trapped in various crystal structures

  2. Synthesis and characterization of liquid crystals and their thermoset films

    International Nuclear Information System (INIS)

    Ahn, Yong-Ho; Jung, Myung-Sup; Chang, Jin-Hae

    2010-01-01

    We prepared a series of aromatic liquid crystals (LCs) based on aromatic ester units with the reactive end groups methyl-maleimide and nadimide, and the resulting LCs were thermally cross-linked to produce liquid crystalline thermoset (LCT) films by means of solution-casting and heat treatment. The synthesized LCs and LCTs were characterized with Fourier transform infrared (FT-IR) spectroscopy, 1 H nuclear magnetic resonance (NMR), differential scanning calorimetry (DSC), thermomechanical analysis (TMA), and polarizing optical microscopy with a hot stage. We found that all these LCs form nematic phases. The coefficients of thermal expansion (CTEs) of the LCT films are strongly affected by the reactive end group and the mesogen units in their main-chain structures. The methyl-maleimide-terminated biphenyl LCT was found to have the lowest CTE.

  3. A study on lead myristate (LM) soap film crystal by positron annihilation life spectroscopy

    International Nuclear Information System (INIS)

    Shi Zikang; Yu xianchun

    1992-01-01

    The quality of the LM soap film crystal is determined by means of the positron annihilation life spectroscopy. It is found that the technology to be used to make soap film will influence the film quality and the film quality can be improved by a reasonable heat treatment

  4. Parasitic neutron bragg reflections from large imperfect single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Naguib, K.; Adib, M

    1998-12-01

    A formula is given which allows to calculate the contribution of the total Bragg scattering from different (hkl) planes to the neutron transmission through a large imperfect single crystals. The formula takes into account the crystal structure type, its mosaic spread value, the plane along which the crystal surface is cut along and its orientation with respect to the neutron beam direction. A computer program ISCANF-1 was developed to calculate the total parasitic scattering cross-section from different (hkl) planes as well as the nuclear and diffuse scattering cross-sections. The ISCANF-1 program was applied to calculate the neutron attenuation through Cu and Zn single crystals, each of them cut along (002) planes. The calculated values of the neutron transmission through Cu and Zn crystals were compared with the measured ones in the wavelength range 0.21-0.47 nm and 0.04-0.52 nm respectively. The measured and calculated values were found to be in reasonable agreement within the statistical accuracy. The computer program ISCANF-1 was also applied to investigate the effect of parasitic Bragg scattering on the neutron filtering characteristics of both Zn and Cu single crystals as a function of their physical parameters.

  5. Parasitic neutron bragg reflections from large imperfect single crystals

    International Nuclear Information System (INIS)

    Naguib, K.; Adib, M.

    1998-01-01

    A formula is given which allows to calculate the contribution of the total Bragg scattering from different (hkl) planes to the neutron transmission through a large imperfect single crystals. The formula takes into account the crystal structure type, its mosaic spread value, the plane along which the crystal surface is cut along and its orientation with respect to the neutron beam direction. A computer program ISCANF-1 was developed to calculate the total parasitic scattering cross-section from different (hkl) planes as well as the nuclear and diffuse scattering cross-sections. The ISCANF-1 program was applied to calculate the neutron attenuation through Cu and Zn single crystals, each of them cut along (002) planes. The calculated values of the neutron transmission through Cu and Zn crystals were compared with the measured ones in the wavelength range 0.21-0.47 nm and 0.04-0.52 nm respectively. The measured and calculated values were found to be in reasonable agreement within the statistical accuracy. The computer program ISCANF-1 was also applied to investigate the effect of parasitic Bragg scattering on the neutron filtering characteristics of both Zn and Cu single crystals as a function of their physical parameters

  6. Neutron transmission measurements of zinc and lead single crystals

    International Nuclear Information System (INIS)

    Adib, M.; Abdel-Kawy, A.

    1988-01-01

    Neutron transmission measurements of zinc and lead single crystals have been carried out in a neutron wavelength band from 0.03 to 0.55 nm at different orientations of the crystal with regard to the beam direction. The measurements were performed using both time-of-flight and fixed-angle scattering spectrometers installed in front of the ET-RR-1 reactor horizontal channels. It was found that the position of the observed dips in the neutron transmission measurements corresponded to the reflections from the (h k l) planes of the hexagonal zinc single crystal which was cut along the (0 0 2) plane, while in the case of lead, the single crystal was cut perpendicular to the (3 1 1) plane. The reflectivity from the (0 0 2) plane of zinc was determined using both transmission and reflection methods. The maximum reflectivity was found to be 55% when the zinc crystal was orientated at 45 0 to the beam direction. The wavelength spread of the observed reflectivity curve was found to be in agreement with the calculated one, taking into consideration the spectrometer's resolution and the crystal mosaic spread. (author)

  7. Single Crystal Synthesis and STM Studies of High Temperature Superconductors

    Science.gov (United States)

    Barrientos, Alfonso

    1997-01-01

    This is a final report for the work initiated in September of 1994 under the grant NAG8-1085 - NASA/OMU, on the fabrication of bulk and single crystal synthesis, specific heat measuring and STM studies of high temperature superconductors. Efforts were made to fabricate bulk and single crystals of mercury based superconducting material. A systematic thermal analysis on the precursors for the corresponding oxides and carbonates were carried out to synthesized bulk samples. Bulk material was used as seed in an attempt to grow single crystals by a two-step self flux process. On the other hand bulk samples were characterized by x-ray diffraction, electrical resistivity and magnetic susceptibility, We studied the specific heat behavior in the range from 80 to 300 K. Some preliminary attempts were made to study the atomic morphology of our samples. As part of our efforts we built an ac susceptibility apparatus for measuring the transition temperature of our sintered samples.

  8. Mechanical properties of hydroxyapatite single crystals from nanoindentation data

    Science.gov (United States)

    Zamiri, A.; De, S.

    2011-01-01

    In this paper we compute elasto-plastic properties of hydroxyapatite single crystals from nanindentation data using a two-step algorithm. In the first step the yield stress is obtained using hardness and Young’s modulus data, followed by the computation of the flow parameters. The computational approach is first validated with data from existing literature. It is observed that hydroxyapatite single crystals exhibit anisotropic mechanical response with a lower yield stress along the [1010] crystallographic direction compared to the [0001] direction. Both work hardening rate and work hardening exponent are found to be higher for indentation along the [0001] crystallographic direction. The stress-strain curves extracted here could be used for developing constitutive models for hydroxyapatite single crystals. PMID:21262492

  9. Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

    Science.gov (United States)

    Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

    2017-02-01

    Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. High Field Magnetization of Tb Single Crystals

    DEFF Research Database (Denmark)

    Roeland, L. W.; Cock, G. J.; Lindgård, Per-Anker

    1975-01-01

    Hamiltonian including isotropic exchange interactions, effective single-ion anisotropy and magnetoelastic contributions. The parameters of this Hamiltonian were determined by fitting the theoretical results for the spin wave dispersion and energy gap as a function of temperature and magnetic field to existing...... data on Tb. The conduction-electron polarization at zero field and temperature is (0.33+or-0.05) mu B/ion, and the susceptibility is greater than the Pauli susceptibility calculated from the band-structure....

  11. Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro [University of California, Santa Cruz (United States). Baskin School of Engineering; NASA Ames Research Center, Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz, Moffett Field, CA (United States); Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Logeeswaran, V.J.; Islam, M.S. [University of California Davis, Electrical and Computer Engineering, Davis, CA (United States)

    2009-06-15

    A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

  12. Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

    International Nuclear Information System (INIS)

    Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro; Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S.; Logeeswaran, V.J.; Islam, M.S.

    2009-01-01

    A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

  13. GAGG:ce single crystalline films: New perspective scintillators for electron detection in SEM.

    Science.gov (United States)

    Bok, Jan; Lalinský, Ondřej; Hanuš, Martin; Onderišinová, Zuzana; Kelar, Jakub; Kučera, Miroslav

    2016-04-01

    Single crystal scintillators are frequently used for electron detection in scanning electron microscopy (SEM). We report gadolinium aluminum gallium garnet (GAGG:Ce) single crystalline films as a new perspective scintillators for the SEM. For the first time, the epitaxial garnet films were used in a practical application: the GAGG:Ce scintillator was incorporated into a SEM scintillation electron detector and it showed improved image quality. In order to prove the GAGG:Ce quality accurately, the scintillation properties were examined using electron beam excitation and compared with frequently used scintillators in the SEM. The results demonstrate excellent emission efficiency of the GAGG:Ce single crystalline films together with their very fast scintillation decay useful for demanding SEM applications. Copyright © 2016 Elsevier B.V. All rights reserved.

  14. Welding and joining of single crystals of BCC refractory metals

    International Nuclear Information System (INIS)

    Hiraoka, Yutaka; Fujii, Tadayuki

    1989-01-01

    Welding and joining is one of key technologies for the wider utilizations of a material. In the present work, the applicability of welding and joining for a single crystal of BCC refractory metal was investigated. Electron-beam welding and tungsten-inert-gas welding by a melt-run technique, and high-temperature brazing by using brazing metals such as Mo-40%Ru alloy, vanadium or platinum were conducted for molybdenum single crystal which had been prepared by means of secondary recrystallization. 12 refs.,12 figs., 2 tabs. (Author)

  15. Cryogenic motion performances of a piezoelectric single crystal micromotor

    Science.gov (United States)

    Li, Xiaotian; Wu, Yuting; Chen, Zhijiang; Wei, Xiaoyong; Luo, Haosu; Dong, Shuxiang

    2014-04-01

    This study investigates the cryogenic performances of a millimeter-size piezoelectric ultrasonic linear micromotor. The piezoelectric vibrator of the micromotor is made of Pb(In1/2Nb1/2)O3 -Pb(Mg1/3Nb2/3)-PbTiO3 single crystal and operated in first-bending wobbling mode. Experiments show that the piezoelectric single crystal micromotor works effectively even at extremely low temperature of -175 °C, although its resonance peaks vary with temperature significantly. This work confirms the feasibility of cryogenic operation of the piezo-micromotor, which is meaningful for aerospace or superconducting microwave application.

  16. Regularities of recrystallization in rolled Zr single crystals

    International Nuclear Information System (INIS)

    Isaenkova, M; Perlovich, Yu; Fesenko, V; Krymskaya, O; Krapivka, N; Thu, S S

    2015-01-01

    Experiments by rolled single crystals give a more visible conception of the operating mechanisms of plastic deformation and the following recrystallization, than experiments by polycrystals. Studies by usage of X-ray diffraction methods were conducted by Zr single crystals. It was revealed, that regions of the α-Zr matrix, deformed mainly by twinning, are characterized with decreased tendency to recrystallization. Orientations of recrystallized α-Zr grains correspond to “slopes” of maxima in the rolling texture, where the level of crystalline lattice distortion is maximal and the number of recrystallization nuclei is most of all. (paper)

  17. Preparation of single-crystal copper ferrite nanorods and nanodisks

    International Nuclear Information System (INIS)

    Du Jimin; Liu Zhimin; Wu Weize; Li Zhonghao; Han Buxing; Huang Ying

    2005-01-01

    This article, for the first time, reports the preparation of single-crystal copper ferrite nanorods and nanodisks. Using amorphous copper ferrite nanoparticles synthesized by reverse micelle as reaction precursor, single-crystal copper ferrite nanorods were synthesized via hydrothermal method in the presence of surfactant polyethylene glycol (PEG), however, copper ferrite nanodisks were prepared through the same procedures except the surfactant PEG. The resulting nanomaterials have been characterized by powder X-ray diffraction (XRD), selected electron area diffraction (SEAD), and transmission electron microscopy (TEM). The bulk composition of the samples was determined by means of X-ray photoelectron spectroscopy (XPS)

  18. Laser induced single-crystal transition in polycrystalline silicon

    International Nuclear Information System (INIS)

    Vitali, G.; Bertolotti, M.; Foti, G.; Rimini, E.

    1978-01-01

    Transition to single crystal of polycrystalline Si material underlying a Si crystal substrate of 100 orientation was obtained via laser irradiation. The changes in the structure were analyzed by reflection high energy electron diffraction and by channeling effect technique using 2.0 MeV He Rutherford scattering. The power density required to induce the transition in a 4500 A thick polycrystalline layer is about 70 MW/cm 2 (50ns). The corresponding amorphous to single transition has a threshold of about 45 MW/cm 2 . (orig.) 891 HPOE [de

  19. Studies on growth, crystal structure and characterization of novel organic nicotinium trifluoroacetate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Dhanaraj, P.V. [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Rajesh, N.P., E-mail: rajeshnp@hotmail.com [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Sundar, J. Kalyana; Natarajan, S. [Department of Physics, Madurai Kamaraj University, Madurai 625 021 (India); Vinitha, G. [Department of Physics, Crescent Engineering College, Chennai 600 048 (India)

    2011-09-15

    Highlights: {yields} Good quality crystals of nicotinium trifluoroacetate in monoclinic system were grown for first time. {yields} Nicotinium trifluoroacetate crystal exhibits third order nonlinear optical properties. {yields} The optical spectrum of nicotinium trifluoroacetate crystal reveals the wide transmission in the entire range with cutoff wavelength at 286 nm. {yields} Nicotinium trifluoroacetate is a low dielectric constant material. - Abstract: An organic material, nicotinium trifluoroacetate (NTF) was synthesized and single crystals in monoclinic system were grown from aqueous solution for the first time. Its solubility and metastable zone width were estimated. The crystal structure of NTF was analyzed to reveal the molecular arrangements and the formation of hydrogen bonds in the crystal. High-resolution X-ray diffraction rocking curve measurements were performed to analyze the structural perfection of the grown crystals. Functional groups in NTF were identified by Fourier transform infrared spectral analysis. Thermal behaviour and stability of NTF were studied by thermogravimetric and differential thermal analysis and differential scanning calorimetry. Mechanical and dielectric properties of NTF crystals were analyzed. Optical studies reveal that NTF crystals are transparent in the wavelength range 286-1100 nm. The third order nonlinear optical parameters of NTF were derived by the Z-scan technique.

  20. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  1. Single layer porous gold films grown at different temperatures

    International Nuclear Information System (INIS)

    Zhang Renyun; Hummelgard, Magnus; Olin, Hakan

    2010-01-01

    Large area porous gold films can be used in several areas including electrochemical electrodes, as an essential component in sensors, or as a conducting material in electronics. Here, we report on evaporation induced crystal growth of large area porous gold films at 20, 40 and 60 deg. C. The gold films were grown on liquid surface at 20 deg. C, while the films were grown on the wall of beakers when temperature increased to 40 and 60 deg. C. The porous gold films consisted of a dense network of gold nanowires as characterized by TEM and SEM. TEM diffraction results indicated that higher temperature formed larger crystallites of gold wires. An in situ TEM imaging of the coalescence of gold nanoparticles mimicked the process of the growth of these porous films, and a plotting of the coalescence time and the neck radius showed a diffusion process. The densities of these gold films were also characterized by transmittance, and the results showed film grown at 20 deg. C had the highest density, while the film grown at 60 deg. C had the lowest consistent with SEM and TEM characterization. Electrical measurements of these gold films showed that the most conductive films were the ones grown at 40 deg. C. The conductivities of the gold films were related to the amount of contamination, density and the diameter of the gold nanowires in the films. In addition, a gold film/gold nanoparticle hybrid was made, which showed a 10% decrease in transmittance during hybridization, pointing to applications as chemical and biological sensors.

  2. Stacking fault tetrahedron induced plasticity in copper single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Liang, E-mail: lz592@uowmail.edu.au [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Lu, Cheng, E-mail: chenglu@uow.edu.au [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Tieu, Kiet; Su, Lihong; Zhao, Xing [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Pei, Linqing [Department of Mechanical Engineering, Chongqing University, Chongqing 400044 (China)

    2017-01-05

    Stacking fault tetrahedron (SFT) is the most common type of vacancy clustered defects in fcc metals and alloys, and can play an important role in the mechanical properties of metallic materials. In this study, molecular dynamics (MD) simulations were carried out to investigate the incipience of plasticity and the underlying atomic mechanisms in copper single crystals with SFT. Different deformation mechanisms of SFT were reported due to the crystal orientations and loading directions (compression and tension). The results showed that the incipient plasticity in crystals with SFT resulted from the heterogeneous dislocation nucleation from SFT, so the stress required for plastic deformation was less than that needed for perfect single crystals. Three crystal orientations ([1 0 0], [1 1 0] and [1 1 1]) were specified in this study because they can represent most of the typical deformation mechanisms of SFT. MD simulations revealed that the structural transformation of SFT was frequent under the applied loading; a metastable SFT structure and the collapse of SFT were usually observed. The structural transformation resulted in a different reduction of yield stress in compression and tension, and also caused a decreased or reversed compression/tension asymmetry. Compressive stress can result in the unfaulting of Frank loop in some crystal orientations. According to the elastic theory of dislocation, the process of unfaulting was closely related to the size of the dislocation loop and the stacking fault energy.

  3. Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics

    Science.gov (United States)

    Shu, Deming; Shvydko, Yury; Stoupin, Stanislav; Kim, Kwang-Je

    2018-05-08

    A method and mechanical design for a thin-film diamond crystal mounting apparatus for coherence preservation x-ray optics with optimized thermal contact and minimized crystal strain are provided. The novel thin-film diamond crystal mounting apparatus mounts a thin-film diamond crystal supported by a thick chemical vapor deposition (CVD) diamond film spacer with a thickness slightly thicker than the thin-film diamond crystal, and two groups of thin film thermal conductors, such as thin CVD diamond film thermal conductor groups separated by the thick CVD diamond spacer. The two groups of thin CVD film thermal conductors provide thermal conducting interface media with the thin-film diamond crystal. A piezoelectric actuator is integrated into a flexural clamping mechanism generating clamping force from zero to an optimal level.

  4. Crystal growth, spectral and laser properties of Nd:LSAT single crystal

    Science.gov (United States)

    Hu, P. C.; Yin, J. G.; Zhao, C. C.; Gong, J.; He, X. M.; Zhang, L. H.; Liang, X. Y.; Hang, Y.

    2011-10-01

    Nd:(La, Sr)(Al, Ta)O3 (Nd:LSAT) crystal was grown by the Czochralski method. The absorption and fluorescence spectra of Nd:LSAT crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LSAT crystal was demonstrated. The result of diode-pumped laser operation of Nd:LSAT crystal single crystal is reported for what is to our knowledge the first time. The maximum output power at 1064 nm was obtained to be 165 mW under the incident pump power of 3 W, with the slope efficiency 10.9%.

  5. Induced defects in neutron irradiated GaN single crystals

    International Nuclear Information System (INIS)

    Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.

    2005-01-01

    The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal

  6. Ordered macro-microporous metal-organic framework single crystals

    Science.gov (United States)

    Shen, Kui; Zhang, Lei; Chen, Xiaodong; Liu, Lingmei; Zhang, Daliang; Han, Yu; Chen, Junying; Long, Jilan; Luque, Rafael; Li, Yingwei; Chen, Banglin

    2018-01-01

    We constructed highly oriented and ordered macropores within metal-organic framework (MOF) single crystals, opening up the area of three-dimensional–ordered macro-microporous materials (that is, materials containing both macro- and micropores) in single-crystalline form. Our methodology relies on the strong shaping effects of a polystyrene nanosphere monolith template and a double-solvent–induced heterogeneous nucleation approach. This process synergistically enabled the in situ growth of MOFs within ordered voids, rendering a single crystal with oriented and ordered macro-microporous structure. The improved mass diffusion properties of such hierarchical frameworks, together with their robust single-crystalline nature, endow them with superior catalytic activity and recyclability for bulky-molecule reactions, as compared with conventional, polycrystalline hollow, and disordered macroporous ZIF-8.

  7. Ordered macro-microporous metal-organic framework single crystals

    KAUST Repository

    Shen, Kui

    2018-01-16

    We constructed highly oriented and ordered macropores within metal-organic framework (MOF) single crystals, opening up the area of three-dimensional-ordered macro-microporous materials (that is, materials containing both macro- and micropores) in single-crystalline form. Our methodology relies on the strong shaping effects of a polystyrene nanosphere monolith template and a double-solvent-induced heterogeneous nucleation approach. This process synergistically enabled the in situ growth of MOFs within ordered voids, rendering a single crystal with oriented and ordered macro-microporous structure. The improved mass diffusion properties of such hierarchical frameworks, together with their robust single-crystalline nature, endow them with superior catalytic activity and recyclability for bulky-molecule reactions, as compared with conventional, polycrystalline hollow, and disordered macroporous ZIF-8.

  8. Ordered macro-microporous metal-organic framework single crystals

    KAUST Repository

    Shen, Kui; Zhang, Lei; Chen, Xiaodong; Liu, Lingmei; Zhang, Daliang; Han, Yu; Chen, Junying; Long, Jilan; Luque, Rafael; Li, Yingwei; Chen, Banglin

    2018-01-01

    We constructed highly oriented and ordered macropores within metal-organic framework (MOF) single crystals, opening up the area of three-dimensional-ordered macro-microporous materials (that is, materials containing both macro- and micropores) in single-crystalline form. Our methodology relies on the strong shaping effects of a polystyrene nanosphere monolith template and a double-solvent-induced heterogeneous nucleation approach. This process synergistically enabled the in situ growth of MOFs within ordered voids, rendering a single crystal with oriented and ordered macro-microporous structure. The improved mass diffusion properties of such hierarchical frameworks, together with their robust single-crystalline nature, endow them with superior catalytic activity and recyclability for bulky-molecule reactions, as compared with conventional, polycrystalline hollow, and disordered macroporous ZIF-8.

  9. Electronic transport properties of single crystal thallium-2201 superconductors

    International Nuclear Information System (INIS)

    Yandrofski, R.M.

    1992-01-01

    Four-probe resistance measurements on single crystals of the calcium-free thallium-based superconducting Tl 2 Ba 2 CuO 6+σ phase (Tl-2201) were performed in magnetic fields up to 12 Telsa. Single crystals of sizes were grown by a self-flux technique and were characterized by single crystal X-ray diffraction and X-ray Dispersive Analysis. Field measurements were taken at dc and at low frequencies using a lock-in technique. Techniques were developed to oxygen-anneal the as-grown single crystals to generate single crystal samples of the same Tl-2201 phase with varying transition interaction effect against appropriate composite general alternatives are developed for the standard two-way layout with a single observation per cell. Nonparametric aligned-rank test procedures are introduced. One of the new procedures is shown to be equivalent to a slight modification of the previously studied Latin square procedures when the factors have the same number of levels. The equal in distribution technique is used to show that any statistic based on the joint ranks should not be used to test the hypotheses of interest. The tests based on aligning with the averages do not depend on the nuisance main effects, while those based on aligning with the median do depend on the nuisance main effects. The relative power performance of the competing tests are examined via Monte Carlo simulation. Power studies conducted on the 5 x 5, 5 x 6, and 5 x 9 two-way layouts with one observation per cell show that the new procedures based on a comparison of all possible pairs of rank-profiles perform quite well for two types of product interaction, a general class of interaction effects proposed by Martin, and several sets of specific interaction effects. Approximate critical values for some of the proposed procedures are explored in the special case when the main effect parameters for one factor are known

  10. Neutron transmission of single-crystal sapphire filters

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2005-01-01

    An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons. (author)

  11. Single-crystal diffraction instrument TriCS at SINQ

    Science.gov (United States)

    Schefer, J.; Könnecke, M.; Murasik, A.; Czopnik, A.; Strässle, Th; Keller, P.; Schlumpf, N.

    2000-03-01

    The single-crystal diffractometer TriCS at the Swiss Continuous Spallation Source (SINQ) is presently in the commissioning phase. A two-dimensional wire detector produced by EMBL was delivered in March 1999. The instrument is presently tested with a single detector. First measurements on magnetic structures have been performed. The instrument is remotely controlled using JAVA-based software and a UNIX DEC-α host computer.

  12. Transformation of amorphous calcium carbonate to rod-like single crystal calcite via "copying" collagen template.

    Science.gov (United States)

    Xue, Zhonghui; Hu, Binbin; Dai, Shuxi; Du, Zuliang

    2015-10-01

    Collagen Langmuir films were prepared by spreading the solution of collagen over deionized water, CaCl2 solution and Ca(HCO3)2 solution. Resultant collagen Langmuir monolayers were then compressed to a lateral pressure of 10 mN/m and held there for different duration, allowing the crystallization of CaCO3. The effect of crystallization time on the phase composition and microstructure of CaCO3 was investigated. It was found that amorphous calcium carbonate (ACC) was obtained at a crystallization time of 6 h. The amorphous CaCO3 was transformed to rod-like single crystal calcite crystals at an extended crystallization time of 12 h and 24 h, via "copying" the symmetry and dimensionalities of collagen fibers. Resultant calcite crystallites were well oriented along the longitudinal axis of collagen fibers. The ordered surface structure of collagen fibers and electrostatic interactions played key roles in tuning the oriented nucleation and growth of the calcite crystallites. The mineralized collagen possessing both desired mechanical properties of collagen fiber and good biocompatibility of calcium carbonate may be assembled into an ideal biomaterial for bone implants. Copyright © 2015. Published by Elsevier B.V.

  13. Deformation twinning in zinc-aluminium single crystals after slip

    International Nuclear Information System (INIS)

    Lukac, P.; Kral, F.; Trojanova, Z.; Kral, R.

    1993-01-01

    Deformation twinning in Zn-Al single crystals deformed by slip in the basal system is examined. The influence of temperature and the content of aluminium in zinc on the twinning stress is investigated in the temperature range from 198 to 373 K. It is shown that the twinning stress rises with increasing temperature and increases with the concentration of Al atoms. (orig.)

  14. Structural science using single crystal and pulse neutron scattering

    International Nuclear Information System (INIS)

    Noda, Yukio; Kimura, Hiroyuki; Watanabe, Masashi; Ishikawa, Yoshihisa; Tamura, Itaru; Arai, Masatoshi; Takahashi, Miwako; Ohshima, Ken-ichi; Abe, Hiroshi; Kamiyama, Takashi

    2008-01-01

    The application to single crystal neutron structural analysis is overviewed. Special attention is paid to the pulse neutron method, which will be available soon under J-PARC project in Japan. New proposal and preliminary experiment using Sirius at KENS are described. (author)

  15. Annealing behavior of solution grown polyethylene single crystals

    NARCIS (Netherlands)

    Loos, J.; Tian, M.

    2006-01-01

    The morphology evolution of solution grown polyethylene single crystals has been studied upon annealing below their melting temperature by using atomic force microscopy (AFM). AFM investigations have been performed ex situ, which means AFM investigations at room temperature after the annealing

  16. Corelli: Efficient single crystal diffraction with elastic discrimination

    Indian Academy of Sciences (India)

    Here, we discuss the potential of the cross-correlation technique for efficient measurement of single crystal diffuse scattering with energy discrimination, as will be implemented in a novel instrument, Corelli. Utilizing full experiment simulations, we show that this technique readily leads up to a fifty-fold gain in efficiency, ...

  17. Magnetic structure of URhSi single crystal

    Czech Academy of Sciences Publication Activity Database

    Prokeš, K.; Andreev, Alexander V.; Honda, F.; Sechovský, V.

    2003-01-01

    Roč. 261, - (2003), s. 131-138 ISSN 0304-8853 R&D Projects: GA ČR GA202/02/0739 Institutional research plan: CEZ:AV0Z1010914 Keywords : URhSi single crystal * magnetization * neutron diffraction * magnetic structure determination Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.910, year: 2003

  18. Bulk study of a DyNiAl single crystal

    Czech Academy of Sciences Publication Activity Database

    Prchal, J.; Andreev, Alexander V.; Javorský, P.; Honda, F.; Jurek, Karel

    272-276, - (2004), e419-e420 ISSN 0304-8853 R&D Projects: GA ČR GA106/02/0943 Keywords : rare-earth * DyNiAl * magnetic anisotropy * single crystal Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.031, year: 2004

  19. Lattice effects in HoVo(3) single crystal

    NARCIS (Netherlands)

    Sikora, M.; Marquina, C.; Ibarra, M. R.; Nugroho, A. A.; Palstra, T. T. M.

    We report the study of lattice effects in the Mott insulator HoVO3 performed by means of linear thermal expansion on a single crystal in the temperature range 10-290 K. The holmium orthovanadate HoVO3 reveals gradual orbital ordering (OO) below T-OO = 200K and orders antiferromagnetically at T-N =

  20. Synthesis and room temperature single crystal EPR studies of a ...

    Indian Academy of Sciences (India)

    Unknown

    Hamiltonian parameters calculated from single crystal rotations are: g ... studies on two nickel complexes with SalX ligands (X = NH, NCH3) have shown the ..... here the positive sign is required for a shell that is less than half-filled and the ...

  1. Chromium and molybdenum diffusion in tungsten single crystals

    International Nuclear Information System (INIS)

    Klotsman, S.M.; Koloskov, V.M.; Osetrov, S.V.; Polikarpova, I.P.; Tatarinova, G.N.; Timofeev, A.N.

    1989-01-01

    Consideration is given to results of measuring temperature dependences of diffusion coefficients of homovalent impurities of chromium and molybdenum in tungsten single crystals. It is concluded that the difference of activation energies of selfdiffusion and impurity diffusion in the system 'tungsten-homovalent impurity' is conditioned by interaction of screened potentials of impurity and vacancy with Lazarus-Le Claire model

  2. Dynamic Actuation of Single-Crystal Diamond Nanobeams

    OpenAIRE

    Sohn, Young-Ik; Burek, Michael J.; Kara, Vural; Kearns, Ryan; Lončar, Marko

    2014-01-01

    We show the dielectrophoretic actuation of single-crystal diamond nanomechanical devices. Gradient radio-frequency electromagnetic forces are used to achieve actuation of both cantilever and doubly clamped beam structures, with operation frequencies ranging from a few MHz to ~50MHz. Frequency tuning and parametric actuation are also studied.

  3. High definition TV projection via single crystal faceplate technology

    Science.gov (United States)

    Kindl, H. J.; St. John, Thomas

    1993-03-01

    Single crystal phosphor faceplates are epitaxial phosphors grown on crystalline substrates with the advantages of high light output, resolution, and extended operational life. Single crystal phosphor faceplate industrial technology in the United States is capable of providing a faceplate appropriate to the projection industry of up to four (4) inches in diameter. Projection systems incorporating cathode ray tubes utilizing single crystal phosphor faceplates will produce 1500 lumens of white light with 1000 lines of resolution, non-interlaced. This 1500 lumen projection system will meet all of the currently specified luminance and resolution requirements of Visual Display systems for flight simulators. Significant logistic advantages accrue from the introduction of single crystal phosphor faceplate CRT's. Specifically, the full performance life of a CRT is expected to increase by a factor of five (5); ie, from 2000 to 10,000 hours of operation. There will be attendant reductions in maintenance time, spare CRT requirements, system down time, etc. The increased brightness of the projection system will allow use of lower gain, lower cost simulator screen material. Further, picture performance characteristics will be more balanced across the full simulator.

  4. Lattice location of helium in uranium dioxide single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Garrido, F.; Nowicki, L. E-mail: lech.nowicki@fuw.edu.pl; Sattonnay, G.; Sauvage, T.; Thome, L

    2004-06-01

    Lattice location of {sup 3}He atoms implanted into UO{sub 2} single crystals was performed by means of the channeling technique combined with nuclear reaction analysis (NRA) and Rutherford backscattering spectrometry (RBS). The {sup 3}He(d,p){sup 4}He reaction was used. The experimental angular scans show that helium atoms occupy octahedral interstitial positions.

  5. Multiscale modelling of single crystal superalloys for gas turbine blades

    NARCIS (Netherlands)

    Tinga, T.

    2009-01-01

    Gas turbines are extensively used for power generation and for the propulsion of aircraft and vessels. Their most severely loaded parts, the turbine rotor blades, are manufactured from single crystal nickel-base superalloys. The superior high temperature behaviour of these materials is attributed to

  6. Discrete dislocation plasticity modeling of short cracks in single crystals

    NARCIS (Netherlands)

    Deshpande, VS; Needleman, A; Van der Giessen, E

    2003-01-01

    The mode-I crack growth behavior of geometrically similar edge-cracked single crystal specimens of varying size subject to both monotonic and cyclic axial loading is analyzed using discrete dislocation dynamics. Plastic deformation is modeled through the motion of edge dislocations in an elastic

  7. Double minimum creep of single crystal Ni-base superalloys

    Czech Academy of Sciences Publication Activity Database

    WU, X.; Wollgramm, P.; Somsen, C.; Dlouhý, Antonín; Kostka, A.; Eggeler, G.

    2016-01-01

    Roč. 112, JUN (2016), s. 242-260 ISSN 1359-6454 R&D Projects: GA ČR(CZ) GA14-22834S Institutional support: RVO:68081723 Keywords : Single crystal Ni-base superalloys * Primary creep * Transmission electron microscopy * Dislocations * Stacking faults Subject RIV: JG - Metallurgy Impact factor: 5.301, year: 2016

  8. Detection of anomalies in NLO sulphamic acid single crystals by ...

    Indian Academy of Sciences (India)

    The ultrasonic pulse echo overlap technique (PEO) has been used to measure the ... acid single crystals in the range of 300–400 K. This study evaluated all the elastic stiff- .... tic constants C11, C22, C33, C44, C55 and C66 have direct rela-.

  9. METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE

    NARCIS (Netherlands)

    Van Den Berg, Albert; Bomer, Johan; Carlen Edwin, Thomas; Chen, Songyue; Kraaijenhagen Roderik, Adriaan; Pinedo Herbert, Michael

    2012-01-01

    A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to

  10. METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE.

    NARCIS (Netherlands)

    Van Den Berg, Albert; Bomer, Johan; Carlen Edwin, Thomas; Chen, Songyue; Kraaijenhagen Roderik, Adriaan; Pinedo Herbert, Michael

    2011-01-01

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing

  11. Design of nanostrip magnonic crystal waveguides with a single magnonic band gap

    International Nuclear Information System (INIS)

    Wang, Qi; Zhong, Zhiyong; Jin, Lichuan; Tang, Xiaoli; Bai, Feiming; Zhang, Huaiwu; Beach, Geoffrey S.D.

    2013-01-01

    A novel planar structure of magnonic-crystal waveguide (MCW) with periodic rectangular-shaped holes embedded in a magnetic nanostrip film was designed. The effects of the distance between rectangular-shaped holes in the width direction of MCW on magnonic band structures were studied by micromagnetic simulations. The results show that a MCW with a single magnonic band gap can be obtained by adjusting the distance to meet the condition of Bragg reflection of spin waves in the width direction of MCW. Moreover, the center frequency and width of magnonic gap can be regulated by changing the period and length of rectangular-shaped holes. - Highlights: • Design a novel planar structure of magnonic-crystal waveguide. • The physical origin of a single magnonic band gap. • Study of the center frequency and width of magnonic gap

  12. Single-crystal Au microflakes modulated by amino acids and their sensing and catalytic properties.

    Science.gov (United States)

    Li, Mingjie; Wu, Xiaochen; Zhou, Jiyu; Kong, Qingshan; Li, Chaoxu

    2016-04-01

    Single-crystal Au microflakes with the planar area over 10(3)μm(2) (i.e. being accessible to the human eye resolution) were synthesized in an environment-friendly route by directing two-dimensional growth of Au nanocrystals into macroscopic scales with amino acids as both reducing agents and capping agents. Side groups of amino acids were found to be a determinant parameter to tune the dimension and size of Au single crystals. The successful synthesis of Au microflakes provides an unprecedented opportunity to bridge nanotechnology and macroscopic devices, and hereby to start a new scenario of exploring their unique properties and applications in optoelectronic devices and bio-sensing fields across multiple length scales. For example, Au microflakes respond to air humidity upon depositing on films of chitin nanofibrils, and sense various physiological molecules as electrode materials of biosensors. Copyright © 2016 Elsevier Inc. All rights reserved.

  13. Effect of physicochemical factors on the microplasticity of the surface layer of molybdenum single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Savenko, V.I.; Kuchumova, V.M.; Kochanova, L.A.; Shchukin, E.D.

    1984-07-01

    The microplastic properties of the surface layer of molybdenum single crystals produced by electron-beam zone melting have been investigated experimentaly using ultramicrosclerometry and microindentation techniques. It is found that the 111 plane has the highest susceptibility to plastic damage, while the 100 plane is the hardest. An analysis of the stressed state of the material under an indenter shows that the dislocation density along the loading paths, which characterizes the microplasticity of the material, is largely determined by the crystallography of the lattice, i.e., by the arrangement and the number of effective slip systems in specimens of different orientations. The effect of a monolayer octadecylamine film on the microplastic behavior of molybdenum single crystals is discussed.

  14. Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

    NARCIS (Netherlands)

    Eising, Gert; Pauza, Andrew; Kooi, Bart J.

    The large effects of moderate stresses on the crystal growth rate in Ge-doped Sb phase-change thin films are demonstrated using direct optical imaging. For Ge6Sb94 and Ge7Sb93 phase-change films, a large increase in crystallization temperature is found when using a polycarbonate substrate instead of

  15. Role of crystal orientation on chemical mechanical polishing of single crystal copper

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Aibin, E-mail: abzhu@mail.xjtu.edu.cn; He, Dayong; Luo, Wencheng; Liu, Yangyang

    2016-11-15

    Highlights: • The role of crystal orientation in cooper CMP by quasi-continuum was studied. • The atom displacement diagrams were obtained and analyzed. • The stress distribution diagrams and load-displacement curves were analyzed. • This research is helpful to revealing the material removal mechanism of CMP. - Abstract: The material removal mechanism of single crystal copper in chemical mechanical polishing (CMP) has not been intensively investigated. And the role of crystal orientation in CMP of single crystal cooper is not quite clear yet. Quasi-continuum method was adopted in this paper to simulate the process of nano-particles grinding on single crystal copper in CMP process. Three different crystal orientations, i.e. x[100]y[001], x[001]y[110] and x[–211]y[111], were chosen for analysis. The atom displacement diagrams, stress distribution diagrams and load-displacement curves were obtained. After analyzing the deformation mechanism, residual stress of the work piece material and cutting force, results showed that, the crystal orientation of work piece has great influence on the deformation characteristics and surface quality of work piece during polishing. In the A(001)[100] orientation, the residual stress distribution after polishing is deeper, and the stress is larger than that in the B(110)[001] and C(111)[–211] orientations. And the average tangential cutting force in the A(001)[100] orientation is much larger than those in the other two crystal orientation. This research is helpful to revealing the material removal mechanism of CMP process.

  16. Solution-printed organic semiconductor blends exhibiting transport properties on par with single crystals

    KAUST Repository

    Niazi, Muhammad Rizwan; Li, Ruipeng; Li, Erqiang; Kirmani, Ahmad R.; Abdelsamie, Maged; Wang, Qingxiao; Pan, Wenyang; Payne, Marcia M.; Anthony, John E.; Smilgies, Detlef-M.; Thoroddsen, Sigurdur T; Giannelis, Emmanuel P.; Amassian, Aram

    2015-01-01

    Solution-printed organic semiconductors have emerged in recent years as promising contenders for roll-to-roll manufacturing of electronic and optoelectronic circuits. The stringent performance requirements for organic thin-film transistors (OTFTs) in terms of carrier mobility, switching speed, turn-on voltage and uniformity over large areas require performance currently achieved by organic single-crystal devices, but these suffer from scale-up challenges. Here we present a new method based on blade coating of a blend of conjugated small molecules and amorphous insulating polymers to produce OTFTs with consistently excellent performance characteristics (carrier mobility as high as 6.7 cm2 V−1 s−1, low threshold voltages of<1 V and low subthreshold swings <0.5 V dec−1). Our findings demonstrate that careful control over phase separation and crystallization can yield solution-printed polycrystalline organic semiconductor films with transport properties and other figures of merit on par with their single-crystal counterparts.

  17. Solution-printed organic semiconductor blends exhibiting transport properties on par with single crystals

    KAUST Repository

    Niazi, Muhammad Rizwan

    2015-11-23

    Solution-printed organic semiconductors have emerged in recent years as promising contenders for roll-to-roll manufacturing of electronic and optoelectronic circuits. The stringent performance requirements for organic thin-film transistors (OTFTs) in terms of carrier mobility, switching speed, turn-on voltage and uniformity over large areas require performance currently achieved by organic single-crystal devices, but these suffer from scale-up challenges. Here we present a new method based on blade coating of a blend of conjugated small molecules and amorphous insulating polymers to produce OTFTs with consistently excellent performance characteristics (carrier mobility as high as 6.7 cm2 V−1 s−1, low threshold voltages of<1 V and low subthreshold swings <0.5 V dec−1). Our findings demonstrate that careful control over phase separation and crystallization can yield solution-printed polycrystalline organic semiconductor films with transport properties and other figures of merit on par with their single-crystal counterparts.

  18. Progress in thin-film silicon solar cells based on photonic-crystal structures

    Science.gov (United States)

    Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Jeon, Seung-Woo; Noda, Susumu

    2018-06-01

    We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ∼500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ∼20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

  19. The thickness of native oxides on aluminum alloys and single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Evertsson, J., E-mail: jonas.evertsson@sljus.lu.se [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Bertram, F. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Zhang, F. [KTH Royal Institute of Technology, Department of Chemistry, Division of Surface and Corrosion Science, Drottning Kristinas Vg 51, 100 44 Stockholm (Sweden); Rullik, L.; Merte, L.R.; Shipilin, M. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Soldemo, M.; Ahmadi, S. [KTH Royal Institute of Technology, ICT, Material Physics, 16440 Kista (Sweden); Vinogradov, N.; Carlà, F. [ESRF, B.P. 220, 38043 Grenoble (France); Weissenrieder, J.; Göthelid, M. [KTH Royal Institute of Technology, ICT, Material Physics, 16440 Kista (Sweden); Pan, J. [KTH Royal Institute of Technology, Department of Chemistry, Division of Surface and Corrosion Science, Drottning Kristinas Vg 51, 100 44 Stockholm (Sweden); Mikkelsen, A. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Nilsson, J.-O. [Sapa Technology, Kanalgatan 1, 612 31 Finspång (Sweden); Lundgren, E. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden)

    2015-09-15

    Highlights: • We have determined the native oxide film thickness on several Al samples. • The results obtained from XRR and XPS show excellent agreement. • The results obtained from EIS show consistently thinner oxide films. • The oxides on the alloys are thicker than the oxides on the single crystals. - Abstract: We present results from measurements of the native oxide film thickness on four different industrial aluminum alloys and three different aluminum single crystals. The thicknesses were determined using X-ray reflectivity, X-ray photoelectron spectroscopy, and electrochemical impedance spectroscopy. In addition, atomic force microscopy was used for micro-structural studies of the oxide surfaces. The reflectivity measurements were performed in ultra-high vacuum, vacuum, ambient, nitrogen and liquid water conditions. The results obtained using X-ray reflectivity and X-ray photoelectron spectroscopy demonstrate good agreement. However, the oxide thicknesses determined from the electrochemical impedance spectroscopy show a larger discrepancy from the above two methods. In the present contribution the reasons for this discrepancy are discussed. We also address the effect of the substrate type and the presence of water on the resultant oxide thickness.

  20. Preparation of Lead Magnesium Niobate-Lead Zirconate Titanate Films and Their Crystallization Behaviors

    International Nuclear Information System (INIS)

    Tursiloadi, Silvester

    2002-01-01

    The thin films with composition near morpotropic phase boundary (MPB) of the system xPb(Mg 1 /3, Nb 2 /3) O 3 -yPbTiO 3 -zPbZrO 3 (x = 0-0.35, y = 0.47 and z = 0.53), were prepared by sol-gel method. The starting materials were consisted of Pb(iso-OC 3 H 7 ) 2 , Zr(n-OC 4 H 9 ) 4 , Ti(iso-OC 3 H 7 ) 4 , Mg(CH 3 COO) 2 4H 2 O and Nb(OC 2 H 5 ) 5 . The l-propanol was used as solvent. The concentration of PMN-PT-PZ in coating solution was 0.7 M, and the pH of the solution was 4.5. The thin films were prepared by dip coating and spin coating. The crystallization behaviors of the PMN-PT-PZ thin films showed that the formation of perovskite phase at low temperature becomes difficult with increasing the content of PMN. The amounts of pyrochlore and perovskite phase in PMN-PT-PZ films depended on the heating temperatures, and PMN contents. Single-phase perovskite was found for the coated films containing 0 and 12.5 mol% after calculating at 600 o C, 21 mol% after calculating at 700 o C, and 30 mol% after calculating at 750 o C. Single-phase perovskite of coated films will never be found when the content of PMN was 35 mol%

  1. Periodic reversal of magneto-optic Faraday rotation on uniaxial birefringence crystal with ultrathin magnetic films

    Directory of Open Access Journals (Sweden)

    C. W. Su

    2013-07-01

    Full Text Available An experimental approach of inclined incidence magneto-optic Faraday effect observed in the polar plane is applied. Three samples containing ferromagnetic cobalt ultrathin films on a semiconductor zinc oxide (0001 single crystal substrate with in-plane and out-of-plane anisotropy are evaluated. Through the fine adjustment of crossed polarizers in the magneto-optic effect measurement completely recorded the detail optical and magneto-optical responses from the birefringent crystal substrate and the magnetic film, especially for the signal induced from the substrate with uniaxial optical axis. The angle dependency of interference phenomena periodically from the optical and magneto-optical responses is attributed to the birefringence even in the absence of a magnetic field. The new type of observation finds that the transmission Faraday intensity in the oblique incidence includes a combination of polarization rotations, which results from optical compensation from the substrate and magneto-optical Faraday effects from the film. The samples grown at different rates and examined by this method exhibit magnetic structure discriminations. This result can be applied in the advanced polarized-light technologies to enhance the spatial resolution of magnetic surfaces with microstructural information under various magnetic field direction.

  2. Optical properties of Sulfur doped InP single crystals

    Science.gov (United States)

    El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.

    2014-05-01

    Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral range of 200-2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals exhibit allowed and forbidden direct transitions with energy gaps of 1.578 and 1.528 eV, respectively. Analysis of the refractive index in the normal dispersion region was discussed in terms of the single oscillator model. Some optical dispersion parameters namely: the dispersion energy (Ed), single oscillator energy (Eo), high frequency dielectric constant (ɛ∞), and lattice dielectric constant (ɛL) were determined. The volume and the surface energy loss functions (VELF & SELF) were estimated. Also, the real and imaginary parts of the complex conductivity were calculated.

  3. THIN FILMS OF A NEW ORGANIC SINGLE-COMPONENT FERROELECTRIC 2-METHYLBENZIMIDAZOLE

    Directory of Open Access Journals (Sweden)

    E. V. Balashova

    2016-09-01

    Full Text Available Subject of Research.We present results of structural and dielectric study of organic ferroelectric 2-methylbenzimidazole (MBI thin films. Method. The films have been grown on substrates of leuco-sapphire, fused and crystalline silica, neodymium gallate, bismuth germanate, gold, aluminium, platinum. The films have been grown by two different methods: substrate covering by ethanol solution of MBI and subsequent ethanol evaporation; sublimation at the temperature near 375 K under atmospheric pressure. Crystallographic orientation studies have been performed by means of «DRON-3» X-ray diffractometer, block structure of the films has been determined by «LaboPol-3» polarizing microscope. Small-signal dielectric response has been received with the use of «MIT 9216A» digital LCR-meter, while strong-signal dielectric response has been studied by Sawyer-Tower circuit. Main Resuts. We have shown that the films obtained by evaporation are continuous and textured. Obtained film structure depends on the concentration of the solution. Films may consist of blocks that are splitted crystals like spherulite. Spontaneous polarization components in such films may be directed both perpendicularly and in the film plane. We have also obtained structures consisting of single-crystal blocks with spontaneous polarization components being allocated in the film plane. Block sizes vary from a few to hundreds of microns. Films obtained by sublimation are amorphous or dendritic. The dielectric properties of the films obtained by evaporation have been studied. We have shown that the dielectric constant and dielectric loss tangent increase under heating. The dielectric hysteresis loops are observed at the temperature equal to 291-379 K. The remnant polarization increases with temperature for constant amplitude of the external electric field, and achieves 4.5mC/cm2, while the coercive field remains constant. We propose that such behavior is explained by increase of the

  4. Twinning processes in Cu-Al-Ni martensite single crystals investigated by neutron single crystal diffraction method

    Czech Academy of Sciences Publication Activity Database

    Molnar, P.; Šittner, P.; Novák, V.; Lukáš, Petr

    2008-01-01

    Roč. 481, Sp.Iss.SI (2008), s. 513-517 ISSN 0921-5093 R&D Projects: GA AV ČR IAA100480704 Institutional research plan: CEZ:AV0Z10480505 Keywords : Cu-Al-Ni * single crystals * neutron diffraction Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.806, year: 2008

  5. Trapezoidal diffraction grating beam splitters in single crystal diamond

    Science.gov (United States)

    Kiss, Marcell; Graziosi, Teodoro; Quack, Niels

    2018-02-01

    Single Crystal Diamond has been recognized as a prime material for optical components in high power applications due to low absorption and high thermal conductivity. However, diamond microstructuring remains challenging. Here, we report on the fabrication and characterization of optical diffraction gratings exhibiting a symmetric trapezoidal profile etched into a single crystal diamond substrate. The optimized grating geometry diffracts the transmitted optical power into precisely defined proportions, performing as an effective beam splitter. We fabricate our gratings in commercially available single crystal CVD diamond plates (2.6mm x 2.6mm x 0.3mm). Using a sputter deposited hard mask and patterning by contact lithography, the diamond is etched in an inductively coupled oxygen plasma with zero platen power. The etch process effectively reveals the characteristic {111} diamond crystal planes, creating a precisely defined angled (54.7°) profile. SEM and AFM measurements of the fabricated gratings evidence the trapezoidal shape with a pitch of 3.82μm, depth of 170 nm and duty cycle of 35.5%. Optical characterization is performed in transmission using a 650nm laser source perpendicular to the sample. The recorded transmitted optical power as function of detector rotation angle shows a distribution of 21.1% in the 0th order and 23.6% in each +/-1st order (16.1% reflected, 16.6% in higher orders). To our knowledge, this is the first demonstration of diffraction gratings with trapezoidal profile in single crystal diamond. The fabrication process will enable beam splitter gratings of custom defined optical power distribution profiles, while antireflection coatings can increase the efficiency.

  6. Annealing effect of H+ -implanted single crystal silicon on strain and crystal structure

    International Nuclear Information System (INIS)

    Duo Xinzhong; Liu Weili; Zhang Miao; Gao Jianxia; Fu Xiaorong; Lin Chenglu

    2000-01-01

    The work focuses on the rocking curves of H + -implanted single silicon crystal detected by Four-Crystal X-ray diffractometer. The samples were annealed under different temperatures. Lattice defect in H + -implanted silicon crystals was detected by Rutherford Backscattering Spectrometry. It appeared that H-related complex did not crush until annealing temperature reached about 400 degree C. At that temperature H 2 was formed, deflated in silicon lattice and strained the lattice. But defects did not come into being in large quantity. The lattice was undamaged. When annealing temperature reached 500 degree C, strain induced by H 2 deflation crashed the silicon lattice. A large number of defects were formed. At the same time bubbles in the crystal and blister/flaking on the surface could be observed

  7. Two against one - a case for single-sided films

    International Nuclear Information System (INIS)

    Dixon, L.

    1979-01-01

    The disadvantages of double-sided X-ray film include parallax between the double images where the film is angled to the central ray, and a cross-over effect where light from the front screen affects the back emulsion and vice versa. An investigation of the percentage of the total film density due to cross-over showed the effect varied from 28% to 47%, increasing with total density and faster screens. Kilovoltage had little influence on the effect. A single emulsion film with one screen gave an appreciable increase in radiographic sharpness and definition but required an increase by about 2.5 times in the exposure required. A very fast screen overcame this effect without comparable loss of detail. The use of single emulsion films should also reduce the thickness of cut and therefore improve sharpness in tomography. (UK)

  8. Mesoporous zeolite and zeotype single crystals synthesized in fluoride media

    DEFF Research Database (Denmark)

    Egeblad, Kresten; Kustova, Marina; Klitgaard, Søren Kegnæs

    2007-01-01

    We report the synthesis and characterization of a series of new mesoporous zeolite and zeotype materials made available by combining new and improved procedures for directly introducing carbon into reaction mixtures with the fluoride route for conventional zeolite synthesis. The mesoporous...... materials were all prepared by hydrothermal crystallization of gels adsorbed on carbon matrices which were subsequently removed by combustion. The procedures presented here resulted in mesoporous zeolite and zeotypes materials with MFI, MEL, BEA, AFI and CHA framework structures. All samples were...... characterized by XRPD, SEM, TEM and N-2 physisorption measurements. For the zeolite materials it A as found that mesoporous MFI and MEL structured single crystals could indeed be crystallized from fluoride media using an improved carbon-templating approach. More importantly, it was found that mesoporous BEA...

  9. Twinning structures in near-stoichiometric lithium niobate single crystals

    International Nuclear Information System (INIS)

    Yao, Shuhua; Chen, Yanfeng

    2010-01-01

    A near-stoichiometric lithium niobate single crystal has been grown by the Czochralski method in a hanging double crucible with a continuous powder supply system. Twins were found at one of the three characteristic growth ridges of the as-grown crystal. The twin structure was observed and analyzed by transmission synchrotron topography. The image shifts ΔX and ΔY in the transmission synchrotron topograph were calculated for the 3 anti 2 anti 12 and 0 anti 222 reflections based on results from high-resolution X-ray diffractometry. It is confirmed that one of the {01 anti 1 anti 2} m planes is the composition face of the twin and matrix crystals. The formation mechanism of these twins is discussed. (orig.)

  10. Neutron transmission and reflection at a copper single crystal

    International Nuclear Information System (INIS)

    Adib, M.; Maayouf, R.M.A.; Abdel-Kawy, A.; Fayek, M.; Habib, N.; Wahba, M.

    1991-01-01

    Neutron transmission and reflection at a copper single crystal cut along the (111) plane were studied with the fixed-scattering-angle spectrometer installed at the ET-RR-1 reactor. The transmission was measured for neutron wavelengths between 0.15 and 0.46 nm and various orientations of the (111) plane with respect to the incident beam. When used as a neutron band pass filter, the crystal is optimally oriented when the neutron beam is incident parallel to the [111] direction. The reflectivity was measured for the (111) plane at 45deg with respect to the incident beam. The results were found to be in reasonable agreement with a value predicted for the reflected intensity at an imperfect crystal with finite absorption. (orig.) [de

  11. Neutron transmission and reflection at a copper single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Adib, M.; Maayouf, R.M.A.; Abdel-Kawy, A.; Fayek, M.; Habib, N. (Atomic Energy Establishment, Cairo (Egypt). Reactor and Neutron Physics Dept.); Wahba, M. (Ain Shams Univ., Cairo (Egypt). Dept. of Engineering Physics and Mathematics)

    1991-06-01

    Neutron transmission and reflection at a copper single crystal cut along the (111) plane were studied with the fixed-scattering-angle spectrometer installed at the ET-RR-1 reactor. The transmission was measured for neutron wavelengths between 0.15 and 0.46 nm and various orientations of the (111) plane with respect to the incident beam. When used as a neutron band pass filter, the crystal is optimally oriented when the neutron beam is incident parallel to the (111) direction. The reflectivity was measured for the (111) plane at 45deg with respect to the incident beam. The results were found to be in reasonable agreement with a value predicted for the reflected intensity at an imperfect crystal with finite absorption. (orig.).

  12. Neutron transmission of single-crystal sapphire filters

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2004-01-01

    A simple additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for mono-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons

  13. Effect of Crystal Orientation on Fatigue Failure of Single Crystal Nickel Base Turbine Blade Superalloys

    Science.gov (United States)

    Arakere, Nagaraj K.; Swanson, Gregory R.

    2000-01-01

    High Cycle Fatigue (HCF) induced failures in aircraft gas-turbine engines is a pervasive problem affecting a wide range of components and materials. HCF is currently the primary cause of component failures in gas turbine aircraft engines. Turbine blades in high performance aircraft and rocket engines are increasingly being made of single crystal nickel superalloys. Single-crystal Nickel-base superalloys were developed to provide superior creep, stress rupture, melt resistance and thermomechanical fatigue capabilities over polycrystalline alloys previously used in the production of turbine blades and vanes. Currently the most widely used single crystal turbine blade superalloys are PWA 1480/1493 and PWA 1484. These alloys play an important role in commercial, military and space propulsion systems. PWA1493, identical to PWA1480, but with tighter chemical constituent control, is used in the NASA SSME (Space Shuttle Main Engine) alternate turbopump, a liquid hydrogen fueled rocket engine. Objectives for this paper are motivated by the need for developing failure criteria and fatigue life evaluation procedures for high temperature single crystal components, using available fatigue data and finite element modeling of turbine blades. Using the FE (finite element) stress analysis results and the fatigue life relations developed, the effect of variation of primary and secondary crystal orientations on life is determined, at critical blade locations. The most advantageous crystal orientation for a given blade design is determined. Results presented demonstrates that control of secondary and primary crystallographic orientation has the potential to optimize blade design by increasing its resistance to fatigue crack growth without adding additional weight or cost.

  14. High-quality bulk hybrid perovskite single crystals within minutes by inverse temperature crystallization

    KAUST Repository

    Saidaminov, Makhsud I.; Abdelhady, Ahmed L.; Banavoth, Murali; Alarousu, Erkki; Burlakov, Victor M.; Peng, Wei; Dursun, Ibrahim; Wang, Lingfei; He, Yao; Maculan, Giacomo; Goriely, Alain; Wu, Tao; Mohammed, Omar F.; Bakr, Osman

    2015-01-01

    Single crystals of methylammonium lead trihalide perovskites (MAPbX3; MA=CH3NH3+, X=Br− or I−) have shown remarkably low trap density and charge transport properties; however, growth of such high-quality semiconductors is a time-consuming process

  15. Effect of crystal structure on optical properties of sol–gel derived zirconia thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaodong, E-mail: xiaodong_wang@tongji.edu.cn [Pohl Institute of Solid State Physics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, Tongji University, Shanghai 200092 (China); Wu, Guangming; Zhou, Bin [Pohl Institute of Solid State Physics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, Tongji University, Shanghai 200092 (China); Shen, Jun, E-mail: shenjun67@tongji.edu.cn [Pohl Institute of Solid State Physics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, Tongji University, Shanghai 200092 (China)

    2013-04-15

    Highlights: ► ZrO{sub 2} films were deposited by sol–gel method. ► Crystal structures of the films were tuned by different thermal annealing methods. ► The refractive indices vary with the crystal structures of the films. ► Lattice-mismatch was found to reduce the refractive index of ZrO{sub 2} films. -- Abstract: The optical properties of sol–gel derived zirconia thin films and their relation to the crystal structure are studied in this paper. ZrO{sub 2} films were deposited on quartz glass and silicon wafer substrates by sol–gel method with conventional furnace annealing (CFA) and rapid thermal annealing (RTA). Crystal structures of the films were analyzed by X-ray diffraction (XRD) and Raman spectroscopy, while refractive indices of the films were determined from the reflectance and transmittance spectra. The refractive indices vary with the function of crystal structure and density of the films, which depends on annealing temperature and annealing technique. Lattice-mismatch between monoclinic phase and tetragonal phase was found to reduce the refractive index of ZrO{sub 2} films.

  16. Single-pulse and multi-pulse femtosecond laser damage of optical single films

    International Nuclear Information System (INIS)

    Yuan Lei; Zhao Yuan'an; He Hongbo; Shao Jianda; Fan Zhengxiu

    2006-01-01

    Laser-induced damage of a single 500 nm HfO 2 film and a single 500 nm ZrO 2 film were studied with single- and multi-pulse femtosecond laser. The laser-induced damage thresholds (LIDT) of both samples by the 1-on-1 method and the 1000-on-1 method were reported. It was discovered that the LIDT of the HfO 2 single film was higher than that of the ZrO 2 single film by both test methods, which was explained by simple Keldysh's multiphoton ionization theory. The LIDT of multi-pulse was lower than that of single-pulse for both samples as a result of accumulative effect. (authors)

  17. Photoluminescence and lasing properties of MAPbBr3 single crystals grown from solution

    Science.gov (United States)

    Aryal, Sandip; Lafalce, Evan; Zhang, Chuang; Zhai, Yaxin; Vardeny, Z. Valy

    Recent studies of solution-grown single crystals of inorganic-organic hybrid lead-trihalide perovskites have suggested that surface traps may play a significant role in their photophysics. We study electron-hole recombination in single crystal MAPbBr3 through such trap states using cw photoluminescence (PL) and ps transient photoinduced absorption (PA) spectroscopies. By varying the depth of the collecting optics we examined the contributions from surface and bulk radiative recombination. We found a surface dominated PL band at the band-edge that is similar to that observed from polycrystalline thin films, as well as a weaker red-shifted emission band that originates from the bulk crystal. The two PL bands are distinguished in their temperature, excitation intensity and polarization dependencies, as well as their ps dynamics. Additionally, amplified spontaneous emission and crystal-related cavity lasing modes were observed in the same spectral range as the PL band assigned to the surface recombination. This work was funded by AFOSR through MURI Grant RA 9550-14-1-0037.

  18. Frictional properties of single crystals HMX, RDX and PETN explosives

    International Nuclear Information System (INIS)

    Wu, Y.Q.; Huang, F.L.

    2010-01-01

    The frictional properties of single crystals of cyclotetramethylene tetranitramine (HMX), cyclotrimethylene trinitramine (RDX) and pentaerythritol tetranitrate (PETN) secondary explosives are examined using a sensitive friction machine. The explosive crystals used for the measurements are at least 3.5 mm wide. The friction coefficients between crystals of the same explosive (i.e., HMX on HMX, etc.), crystals of different explosives (i.e., HMX on RDX, etc.), and each explosive and a well-polished gauge steel surface are determined. The frictional surfaces are also studied under an environmental scanning electron microscope (ESEM) to analyze surface microstructural changes under increasing loading forces. The friction coefficients vary considerably with increasing normal loading forces and are particularly sensitive to slider shapes, crystal roughness and the mechanical properties of both the slider and the sample. With increasing loading forces, most friction experiments show surface damage, consisting of grooves, debris, and nano-particles, on both the slider and sample. In some cases, a strong evidence of a localized molten state is found in the central region of the friction track. Possible mechanisms that affect the friction coefficient are discussed based on microscopic observations.

  19. Single crystal growth of yttrium calcium oxy borate (YCOB) crystals by flux technique and their characterization. CP-3.5

    International Nuclear Information System (INIS)

    Arun Kumar, R.; Senthilkumar, M.; Dhanasekaran, R.

    2007-01-01

    Yttrium calcium oxy borate single crystals were grown by the flux technique for the first time. Polycrystalline YCOB material was prepared by solid state reaction method. Single crystals of YCOB were grown using boron-tri-oxide flux. Several transparent single crystals of dimensions 10 x 5 x 5 mm 3 were obtained. The grown crystals were characterized by powder XRD and UV- VIS-NIR studies. The results of powder XRD confirm the crystalline structure of YCOB. The UV- VIS-NIR transmission spectrum reveals that the crystal is highly transparent (above 75%) from ultraviolet (220 nm) to near IR regions enabling it as a suitable candidate for high power UV applications

  20. Aluminum-rich mesoporous MFI - type zeolite single crystals

    DEFF Research Database (Denmark)

    Kustova, Marina; Kustov, Arkadii; Christensen, Christina Hviid

    2005-01-01

    Zeolitcs are crystalline materials, which are widely used as solid acid catalysts and supports in many industrial processes. Recently, mesoporous MFI-type zeolite single crystals were synthesized by use of carbon particles as a mesopore template and sodium aluminate as the aluminum Source....... With this technique, only zeolites with relatively low Al contents were reported (Si/Al ratio about 100). In this work, the preparation of aluminum-rich mesoporous MFI-type zeolite single crystals (Si/Al similar to 16-50) using aluminum isopropoxide as the aluminum Source is reported for the first time. All samples...... are characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), ammonia temperature programmed desorption (NH3-TPD), and N-2 adsorption measurements. The obtained zeolites combine the high crystallinity and the characteristic micropores of zeolites with an intracrystalline mesopore system...

  1. Young's Modulus of Single-Crystal Fullerene C Nanotubes

    Directory of Open Access Journals (Sweden)

    Tokushi Kizuka

    2012-01-01

    Full Text Available We performed bending tests on single-crystal nanotubes composed of fullerene C70 molecules by in situ transmission electron microscopy with measurements of loading forces by an optical deflection method. The nanotubes with the outer diameters of 270–470 nm were bent using simple-beam and cantilever-beam loading by the piezomanipulation of silicon nanotips. Young's modulus of the nanotubes increased from 61 GPa to 110 GPa as the outer diameter decreased from 470 nm to 270 nm. Young's modulus was estimated to be 66% of that of single-crystal C60 nanotubes of the same outer diameter.

  2. Neutron Transmission of Single-crystal Sapphire Filters

    Science.gov (United States)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2005-05-01

    An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum cystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons.

  3. Scintillation activity in an unirradiated single crystal of 3-hydroxyxanthine

    International Nuclear Information System (INIS)

    Cooke, D.W.; Jahan, M.S.; Alexander, C. Jr.

    1976-01-01

    A method of growing single crystals (approximately 4mm long) of 3-hydroxyxanthine is described. Observed scintillations occurring in an unirradiated single crystal of this potent oncogen as the temperature is lowered from 300 to 90 K are shown. It was found that these scintillations occur upon heating or cooling and do not diminish in activity as the number of heating and cooling cycles increase. It was found that a short duration u.v. exposure would terminate the scintillation activity and various attempts (such as annealing and pressure changes) to rejuvenate them were unsuccessful. With these observations in mind speculation is made concerning the mechanisms associated with the production of purine N-oxide derivatives. (U.K.)

  4. Spall behaviour of single crystal aluminium at three principal orientations

    Science.gov (United States)

    Owen, G. D.; Chapman, D. J.; Whiteman, G.; Stirk, S. M.; Millett, J. C. F.; Johnson, S.

    2017-10-01

    A series of plate impact experiments have been conducted to study the spall strength of the three principal crystallographic orientations of single crystal aluminium ([100], [110] and, [111]) and ultra-pure polycrystalline aluminium. The samples have been shock loaded at two impact stresses (4 GPa and 10 GPa). Significant differences have been observed in the elastic behaviour, the pullback velocities, and the general shape of the wave profiles, which can be accounted for by considerations of the microscale homogeneity, the dislocation density, and the absence of grain boundaries in the single crystal materials. The data have shown that there is a consistent order of spall strength measured for the four sample materials. The [111] orientation has the largest spall strength and elastic limit, followed closely by [110], [100], and then the polycrystalline material. This order is consistent with both quasi-static data and geometrical consideration of Schmid factors.

  5. Low temperature deformation mechanisms in LiF single crystals

    International Nuclear Information System (INIS)

    Fotedar, H.L.; Stroebe, T.G.

    1976-01-01

    An analysis of the deformation behavior of high purity LiF single crystals is given using yielding and work hardening data and thermally activated deformation parameters obtained in the temperature range 77-423 0 K. It is found that while the Fleischer mechanism is apparently valid experimentally over the thermally activated temperature range, vacancies produced in large numbers at 77 0 K could also play a role in determining the critical resolved shear stress at that temperature

  6. Ion implantation induced blistering of rutile single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Bing-Xi [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Jiao, Yang [College of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250100 (China); Guan, Jing [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Wang, Lei [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China)

    2015-07-01

    The rutile single crystals were implanted by 200 keV He{sup +} ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He{sup +} ion implantation with appropriate fluence and the following thermal annealing.

  7. Three-dimensional charge transport in organic semiconductor single crystals.

    Science.gov (United States)

    He, Tao; Zhang, Xiying; Jia, Jiong; Li, Yexin; Tao, Xutang

    2012-04-24

    Three-dimensional charge transport anisotropy in organic semiconductor single crystals - both plates and rods (above and below, respectively, in the figure) - is measured in well-performing organic field-effect transistors for the first time. The results provide an excellent model for molecular design and device preparation that leads to good performance. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. A macroscopic model for magnetic shape-memory single crystals

    Czech Academy of Sciences Publication Activity Database

    Bessoud, A. L.; Kružík, Martin; Stefanelli, U.

    2013-01-01

    Roč. 64, č. 2 (2013), s. 343-359 ISSN 0044-2275 R&D Projects: GA AV ČR IAA100750802; GA ČR GAP201/10/0357 Institutional support: RVO:67985556 Keywords : magnetostriction * evolution Subject RIV: BA - General Mathematics Impact factor: 1.214, year: 2013 http://library.utia.cas.cz/separaty/2012/MTR/kruzik-a macroscopic model for magnetic shape- memory single crystals.pdf

  9. The early stages of oxidation of magnesium single crystal surfaces

    International Nuclear Information System (INIS)

    Hayden, B.E.; Schweizer, E.; Koetz, R.; Bradshaw, A.M.

    1981-01-01

    The early stages of oxidation of Mg(001) and Mg(100) single crystal surfaces at 300 K have been investigated by LEED, ELS, work function and ellipsometric measurements. A sharp decrease in work function on both surfaces during the first 12 L exposure indicates the incorporation of oxygen in the earliest stages of the interaction. The incorporated oxygen on Mg(001) gives rise to a broadening of the integral order LEED spots for an exposure 3 L. (orig.)

  10. Application of GRID to Foreign Atom Localization in Single Crystals.

    Science.gov (United States)

    Karmann, A; Wesch, W; Weber, B; Börner, H G; Jentschel, M

    2000-01-01

    The application of GRID (Gamma Ray Induced Doppler broadening) spectroscopy to the localization of foreign atoms in single crystals is demonstrated on erbium in YAP. By the investigation of the Doppler broadened secondary γ line for two crystalline directions, the Er was determined to be localized on the Y site. Conditions for the nuclear parameters of the impurity atoms used for the application of GRID spectroscopy are discussed.

  11. On crystallization of bisphenol-A polycarbonate thin films upon annealing

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Chunhong; Li, Qichao; Mao, Wenfeng; Wang, Peng; He, Chunqing, E-mail: hecq@whu.edu.cn

    2015-10-16

    Crystallization of polycarbonate (PC) films as a function of annealing time has been investigated by various methods. A distinct diffraction peak at 17.56°, a sharp decrease of film thickness, an increase of refractive index and branch-type structures on the surface are found merely for the film after crystallization. Interestingly, positron annihilation parameters demonstrate fractional free-volumes in PC films vary significantly not only before crystallization but also at the early stage of annealing, which are not found by other methods. The results show that free-volumes in PC film must be increased remarkably before crystallization, which enables the occurrence of molecule rearrangement. - Highlights: • Fractional free-volume in PC film decreased of early stage of annealing. • Crystallization of PC film on Si substrate occurred after annealed for ∼48 hours. • Fractional free-volume in PC film increased remarkably before crystallization. • Positron diffusion length and S parameter revealed the variation of free volumes.

  12. On crystallization of bisphenol-A polycarbonate thin films upon annealing

    International Nuclear Information System (INIS)

    Yang, Chunhong; Li, Qichao; Mao, Wenfeng; Wang, Peng; He, Chunqing

    2015-01-01

    Crystallization of polycarbonate (PC) films as a function of annealing time has been investigated by various methods. A distinct diffraction peak at 17.56°, a sharp decrease of film thickness, an increase of refractive index and branch-type structures on the surface are found merely for the film after crystallization. Interestingly, positron annihilation parameters demonstrate fractional free-volumes in PC films vary significantly not only before crystallization but also at the early stage of annealing, which are not found by other methods. The results show that free-volumes in PC film must be increased remarkably before crystallization, which enables the occurrence of molecule rearrangement. - Highlights: • Fractional free-volume in PC film decreased of early stage of annealing. • Crystallization of PC film on Si substrate occurred after annealed for ∼48 hours. • Fractional free-volume in PC film increased remarkably before crystallization. • Positron diffusion length and S parameter revealed the variation of free volumes

  13. Influence of solvents on the habit modification of alpha lactose monohydrate single crystals

    Science.gov (United States)

    Parimaladevi, P.; Srinivasan, K.

    2013-02-01

    Restricted evaporation of solvent method was adopted for the growth of alpha lactose monohydrate single crystals from different solvents. The crystal habits of grown crystals were analysed. The form of crystallization was confirmed by powder x-ray diffraction analysis. Thermal behaviour of the grown crystals was studied by using differential scanning calorimetry.

  14. Growth and characterisation of lead iodide single crystals

    International Nuclear Information System (INIS)

    Tonn, Justus

    2012-01-01

    The work in hand deals with the growth and characterisation of lead iodide (PbI 2 ) single crystals. PbI 2 is regarded as a promising candidate for low-noise X- and gamma ray detection at room temperature. Its benefits if compared to conventional materials like HgI 2 , CdTe, Si, or GaAs lie in a band gap energy of 2.32 eV, an excellent ability to absorb radiation, and a high electrical resistivity. For an application of PbI 2 as detector material the growth and characterisation of crystals with high chemical and structural quality is extremely challenging. In light of this, the effectiveness of zone purification of the PbI 2 used for crystal growth was confirmed by spectroscopic analysis. Furthermore, technological aspects during processing of purified PbI 2 were investigated. With the help of thermal analysis, a correlation was found between the degree of exposing the source material to oxygen from the air and the structural quality of the resulting crystals. A hydrogen treatment was applied to PbI 2 as an effective method for the removal of oxidic pollutions, which resulted in a significant reduction of structural defects like polytypic growth and stress-induced cracking. The growth of PbI 2 single crystals was, among others, carried out by the Bridgman-Stockbarger method. In this context, much effort was put on the investigation of influences resulting from the design and preparation of ampoules. For the first time, crystal growth of PbI 2 was also carried out by the Czochralski method. If compared to the Bridgman-Stockbarger method, the Czochralski technique allowed a significantly faster growth of nearly crack-free crystals with a reproducible predetermination of crystallographic orientation. By an optimised sample preparation of PbI 2 , surface orientations perpendicular to the usually cleaved (0001) plane were realised. It is now possible to determine the material properties along directions which were so far not accessible. Thus, for example, the ratio of

  15. Preparation and characterization of single-crystal multiferroic nanofiber composites

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Zhaohui; Xiao, Zhen; Yin, Simin; Mai, Jiangquan; Liu, Zhenya; Xu, Gang; Li, Xiang; Shen, Ge [State Key Lab of Silicon Materials, Department of Material Science and Engineering, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 (China); Han, Gaorong, E-mail: hgr@zju.edu.cn [State Key Lab of Silicon Materials, Department of Material Science and Engineering, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 (China)

    2013-03-05

    Graphical abstract: One-dimensional single-crystal multiferroic composites composed of PbTiO{sub 3} nanofiber-CoFe{sub 2}O{sub 4} nanodot have been prepared for the first time by a facile in situ solid state sintering method. The composites demonstrate ferroelectricity and ferromagnetism as well as strong coupling between them. Highlights: ► 1D single-crystal multiferroic PTO-CFO was prepared via in situ solid state sintering method. ► A simple epitaxial growth relation has been found between the PTO–CFO composites. ► The composites reveal ferroelectricity and ferromagnetism as well as coupling between them. -- Abstract: One-dimensional single-crystal multiferroic composites consisting of PbTiO{sub 3} (PTO) nanofiber-CoFe{sub 2}O{sub 4} (CFO) nanodot were prepared using an in situ solid state sintering method, where pre-perovskite PTO nanofibers and CFO nanodots were used as precursors. Structural analyses by using transmission electron microscopy, scanning electron microscopy and X-ray diffraction determined a epitaxial growth relation between the PTO nanofiber and the CFO nanodot. Ferromagnetism and ferroelectricity of the nanofiber composites were investigated by using vibarting sample magnetometer (VSM) and piezoresponse force microscopy (PFM)

  16. Chiral multichromic single crystals for optical devices (LDRD 99406).

    Energy Technology Data Exchange (ETDEWEB)

    Kemp, Richard Alan; Felix, Ana M. (University of New Mexico, Albuquerque, NM)

    2006-12-01

    This report summarizes our findings during the study of a novel system that yields multi-colored materials as products. This system is quite unusual as it leads to multi-chromic behavior in single crystals, where one would expect that only a single color would exist. We have speculated that these novel solids might play a role in materials applications such as non-linear optics, liquid crystal displays, piezoelectric devices, and other similar applications. The system examined consisted of a main-group alkyl compound (a p block element such as gallium or aluminum) complexed with various organic di-imines. The di-imines had substituents of two types--either alkyl or aromatic groups attached to the nitrogen atoms. We observed that single crystals, characterized by X-ray crystallography, were obtained in most cases. Our research during January-July, 2006, was geared towards understanding the factors leading to the multi-chromic nature of the complexes. The main possibilities put forth initially considered (a) the chiral nature of the main group metal, (b) possible reduction of the metal to a lower-valent, radical state, (c) the nature of the ligand(s) attached to the main group metal, and (d) possible degradation products of the ligand leading to highly-colored products. The work carried out indicates that the most likely explanation considered involves degradation of the aromatic ligands (a combination of (c) and (d)), as the experiments performed can clearly rule out (a) and (b).

  17. Design and characterization of Ga-doped indium tin oxide films for pixel electrode in liquid crystal display

    International Nuclear Information System (INIS)

    Choi, J.H.; Kang, S.H.; Oh, H.S.; Yu, T.H.; Sohn, I.S.

    2013-01-01

    Indium tin oxide (ITO) thin films doped with various metal atoms were investigated in terms of phase transition behavior and electro-optical properties for the purpose of upgrading ITO and indium zinc oxide (IZO) films, commonly used for pixel electrodes in flat panel displays. We explored Ce, Mg, Zn, and Ga atoms as dopants to ITO by the co-sputtering technique, and Ga-doped ITO films (In:Sn:Ga = 87.4:6.7:5.9 at.%) showed the phase transition behavior at 210 °C within 20 min with high visible transmittance of 91% and low resistivity of 0.22 mΩ cm. The film also showed etching rate similar to amorphous ITO, and no etching residue on glass surfaces. These results were confirmed with the film formed from a single Ga-doped ITO target with slightly different compositions (In:Sn:Ga = 87:9:4 at.%). Compared to the ITO target, Ga-doped ITO target left 1/4 less nodules on the target surface after sputtering. These results suggest that Ga-doped ITO films could be an excellent alternative to ITO and IZO for pixel electrodes in thin film transistor liquid crystal display (TFT-LCD). - Highlights: ► We report Ga-doped In–Sn–O films for a pixel electrode in liquid crystal display. ► Ga-doped In–Sn–O films show phase transition behavior at 210 °C. ► Ga-doped In–Sn–O films show high wet etchability and low resistivity

  18. Diamond turning of Si and Ge single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  19. Single mode dye-doped polymer photonic crystal lasers

    International Nuclear Information System (INIS)

    Christiansen, Mads B; Buß, Thomas; Smith, Cameron L C; Petersen, Sidsel R; Jørgensen, Mette M; Kristensen, Anders

    2010-01-01

    Dye-doped polymer photonic crystal (PhC) lasers fabricated by combined nanoimprint and photolithography are studied for their reproducibility and stability characteristics. We introduce a phase shift in the PhC lattice that substantially improves the yield of single wavelength emission. Single mode emission and reproducibility of laser characteristics are important if the lasers are to be mass produced in, e.g., optofluidic sensor chips. The fabrication yield is above 85% with highly reproducible wavelengths (within 0.5%), and the temperature dependence on the wavelength is found to be −0.045 or −0.066 nm K -1 , depending on the material

  20. Single mode dye-doped polymer photonic crystal lasers

    DEFF Research Database (Denmark)

    Christiansen, Mads Brøkner; Buss, Thomas; Smith, Cameron

    2010-01-01

    Dye-doped polymer photonic crystal (PhC) lasers fabricated by combined nanoimprint and photolithography are studied for their reproducibility and stability characteristics. We introduce a phase shift in the PhC lattice that substantially improves the yield of single wavelength emission. Single mode...... emission and reproducibility of laser characteristics are important if the lasers are to be mass produced in, e. g., optofluidic sensor chips. The fabrication yield is above 85% with highly reproducible wavelengths (within 0.5%), and the temperature dependence on the wavelength is found to be -0.045 or -0...

  1. Rise and fall of ferromagnetism in O-irradiated Al2O3 single crystals

    International Nuclear Information System (INIS)

    Li, Qiang; Xu, Juping; Liu, Jiandang; Du, Huaijiang; Ye, Bangjiao

    2015-01-01

    In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al 2 O 3 single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 μB in Al 2 O 3 crystal and form stable V Al -V Al ferromagnetic coupling at room temperature

  2. A PMMA coated PMN–PT single crystal resonator for sensing chemical agents

    International Nuclear Information System (INIS)

    Frank, Michael; Kassegne, Sam; Moon, Kee S

    2010-01-01

    A highly sensitive lead magnesium niobate–lead titanate (PMN–PT) single crystal resonator coated with a thin film of polymethylmethacrylate (PMMA) useful for detecting chemical agents such as acetone, methanol, and isopropyl alcohol is presented. Swelling of the cured PMMA polymer layer in the presence of acetone, methanol, and isopropyl alcohol vapors is sensed as a mass change transduced to an electrical signal by the PMN–PT thickness shear mode sensor. Frequency change in the PMN–PT sensor is demonstrated to vary according to the concentration of the chemical vapor present within the sensing chamber. For acetone, the results indicate a frequency change more than 6000 times greater than that which would be expected from a quartz crystal microbalance coated with PMMA. This study is the first of its kind to demonstrate vapor loading of adsorbed chemical agents onto a polymer coated PMN–PT resonator

  3. Acquisition of Single Crystal Growth and Characterization Equipment. Final report

    International Nuclear Information System (INIS)

    Maple, M. Brian; Zocco, Diego A.

    2008-01-01

    Final Report for DOE Grant No. DE-FG02-04ER46178 'Acquisition of Single Crystal Growth and Characterization Equipment'. There is growing concern in the condensed matter community that the need for quality crystal growth and materials preparation laboratories is not being met in the United States. It has been suggested that there are too many researchers performing measurements on too few materials. As a result, many user facilities are not being used optimally. The number of proficient crystal growers is too small. In addition, insufficient attention is being paid to the enterprise of finding new and interesting materials, which is the driving force behind much of condensed matter research and, ultimately, technology. While a detailed assessment of this situation is clearly needed, enough evidence of a problem already exists to compel a general consensus that the situation must be addressed promptly. This final report describes the work carried out during the last four years in our group, in which a state-of-the-art single crystal growth and characterization facility was established for the study of novel oxides and intermetallic compounds of rare earth, actinide and transition metal elements. Research emphasis is on the physics of superconducting (SC), magnetic, heavy fermion (HF), non-Fermi liquid (NFL) and other types of strongly correlated electron phenomena in bulk single crystals. Properties of these materials are being studied as a function of concentration of chemical constituents, temperature, pressure, and magnetic field, which provide information about the electronic, lattice, and magnetic excitations at the root of various strongly correlated electron phenomena. Most importantly, the facility makes possible the investigation of material properties that can only be achieved in high quality bulk single crystals, including magnetic and transport phenomena, studies of the effects of disorder, properties in the clean limit, and spectroscopic and scattering

  4. Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

    International Nuclear Information System (INIS)

    Wang, Xiaoping; Wang, Jinye; Wang, Lijun

    2016-01-01

    A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm"2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

  5. Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films

    International Nuclear Information System (INIS)

    Ohdaira, Keisuke; Tomura, Naohito; Ishii, Shohei; Matsumura, Hideki

    2011-01-01

    We investigate residual forms of hydrogen (H) atoms such as bonding configuration in poly-crystalline silicon (poly-Si) films formed by the flash-lamp-induced crystallization of catalytic chemical vapor deposited (Cat-CVD) a-Si films. Raman spectroscopy reveals that at least part of H atoms in flash-lamp-crystallized (FLC) poly-Si films form Si-H 2 bonds as well as Si-H bonds with Si atoms even using Si-H-rich Cat-CVD a-Si films, which indicates the rearrangement of H atoms during crystallization. The peak desorption temperature during thermal desorption spectroscopy (TDS) is as high as 900 o C, similar to the reported value for bulk poly-Si.

  6. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S; Ridge, Claron J.; Rö tzer, Marian David; Zwaschka, Gregor; Braun, Thomas; D'Elia, Valerio; Basset, Jean-Marie; Schweinberger, Florian Frank; Gü nther, Sebastian; Heiz, Ueli

    2015-01-01

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly

  7. Structural anisotropy of magnetically aligned single wall carbon nanotube films

    International Nuclear Information System (INIS)

    Smith, B. W.; Benes, Z.; Luzzi, D. E.; Fischer, J. E.; Walters, D. A.; Casavant, M. J.; Schmidt, J.; Smalley, R. E.

    2000-01-01

    Thick films of aligned single wall carbon nanotubes and ropes have been produced by filtration/deposition from suspension in strong magnetic fields. We measured mosaic distributions of rope orientations in the film plane, for samples of different thicknesses. For an ∼1 μm film the full width at half maximum (FWHM) derived from electron diffraction is 25 degree sign -28 degree sign . The FWHM of a thicker film (∼7 μm) measured by x-ray diffraction is slightly broader, 35±3 degree sign . Aligned films are denser than ordinary filter-deposited ones, and much denser than as-grown material. Optimization of the process is expected to yield smaller FWHMs and higher densities. (c) 2000 American Institute of Physics

  8. Computational Modeling of Photonic Crystal Microcavity Single-Photon Emitters

    Science.gov (United States)

    Saulnier, Nicole A.

    Conventional cryptography is based on algorithms that are mathematically complex and difficult to solve, such as factoring large numbers. The advent of a quantum computer would render these schemes useless. As scientists work to develop a quantum computer, cryptographers are developing new schemes for unconditionally secure cryptography. Quantum key distribution has emerged as one of the potential replacements of classical cryptography. It relics on the fact that measurement of a quantum bit changes the state of the bit and undetected eavesdropping is impossible. Single polarized photons can be used as the quantum bits, such that a quantum system would in some ways mirror the classical communication scheme. The quantum key distribution system would include components that create, transmit and detect single polarized photons. The focus of this work is on the development of an efficient single-photon source. This source is comprised of a single quantum dot inside of a photonic crystal microcavity. To better understand the physics behind the device, a computational model is developed. The model uses Finite-Difference Time-Domain methods to analyze the electromagnetic field distribution in photonic crystal microcavities. It uses an 8-band k · p perturbation theory to compute the energy band structure of the epitaxially grown quantum dots. We discuss a method that combines the results of these two calculations for determining the spontaneous emission lifetime of a quantum dot in bulk material or in a microcavity. The computational models developed in this thesis are used to identify and characterize microcavities for potential use in a single-photon source. The computational tools developed are also used to investigate novel photonic crystal microcavities that incorporate 1D distributed Bragg reflectors for vertical confinement. It is found that the spontaneous emission enhancement in the quasi-3D cavities can be significantly greater than in traditional suspended slab

  9. Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates

    KAUST Repository

    Chao, Chunying

    2012-08-15

    Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single-domain structures, whose polarization areas can be manipulated by writing and reading. The nanoplates are also effective catalysts for the oxidation of carbon monoxide. © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Electrically continuous graphene from single crystal copper verified by terahertz conductance spectroscopy and micro four-point probe

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due; Pizzocchero, Filippo; Jessen, Bjarke Sørensen

    2014-01-01

    noninvasive conductance characterization methods: ultrabroadband terahertz time-domain spectroscopy and micro four-point probe, which probe the electrical properties of the graphene film on different length scales, 100 nm and 10 μm, respectively. Ultrabroadband terahertz time-domain spectroscopy allows......- and microscale electrical continuity of single layer graphene grown on centimeter-sized single crystal copper with that of previously studied graphene films, grown on commercially available copper foil, after transfer to SiO2 surfaces. The electrical continuity of the graphene films is analyzed using two....... Micro four-point probe resistance values measured on graphene grown on single crystalline copper in two different voltage-current configurations show close agreement with the expected distributions for a continuous 2D conductor, in contrast with previous observations on graphene grown on commercial...

  11. Pyroelectric properties of phosphoric acid-doped TGS single crystals

    International Nuclear Information System (INIS)

    Saxena, Aparna; Fahim, M; Gupta, Vinay; Sreenivas, K

    2003-01-01

    Pyroelectric properties of phosphoric acid (H 3 PO 4 )-doped triglycine sulfate (TGSP) single crystals grown from solutions containing 0.1-0.5 mol of H 3 PO 4 have been studied. Incorporation of H 3 PO 4 into the crystal lattice is found to induce an internal bias field (E b ) and is observed through the presence of a sustained polarization and pyroelectricity beyond the transition temperature. The internal bias field has been estimated theoretically by fitting the experimentally measured data on temperature dependence of the pyroelectric coefficient (λ), dielectric constant (ε') and polarization (P). A high E b value in the range 9 x 10 3 -15.5 x 10 4 V m -1 is obtained for crystals grown with 0.1-0.5 mol of H 3 PO 4 in the solution, and a specific concentration of 0.2-0.25 mol of H 3 PO 4 in the solution during crystal growth is found to be optimum for a high figure of merit for detectivity, F d = 428 μC m -2 K -1

  12. Pyroelectric properties of phosphoric acid-doped TGS single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Aparna; Fahim, M; Gupta, Vinay; Sreenivas, K [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2003-12-21

    Pyroelectric properties of phosphoric acid (H{sub 3}PO{sub 4})-doped triglycine sulfate (TGSP) single crystals grown from solutions containing 0.1-0.5 mol of H{sub 3}PO{sub 4} have been studied. Incorporation of H{sub 3}PO{sub 4} into the crystal lattice is found to induce an internal bias field (E{sub b}) and is observed through the presence of a sustained polarization and pyroelectricity beyond the transition temperature. The internal bias field has been estimated theoretically by fitting the experimentally measured data on temperature dependence of the pyroelectric coefficient ({lambda}), dielectric constant ({epsilon}') and polarization (P). A high E{sub b} value in the range 9 x 10{sup 3}-15.5 x 10{sup 4} V m{sup -1} is obtained for crystals grown with 0.1-0.5 mol of H{sub 3}PO{sub 4} in the solution, and a specific concentration of 0.2-0.25 mol of H{sub 3}PO{sub 4} in the solution during crystal growth is found to be optimum for a high figure of merit for detectivity, F{sub d} = 428 {mu}C m{sup -2} K{sup -1}.

  13. Additive to regulate the perovskite crystal film growth in planar heterojunction solar cells

    International Nuclear Information System (INIS)

    Song, Xin; Sun, Po; Chen, Zhi-Kuan; Wang, Weiwei; Ma, Wanli

    2015-01-01

    We reported a planar heterojunction perovskite solar cell fabricated from MAPbI 3−x Cl x perovskite precursor solution containing 1-chloronaphthalene (CN) additive. The MAPbI 3−x Cl x perovskite films have been characterized by UV-vis, SEM, XRD, and steady-state photoluminescence (PL). UV-vis absorption spectra measurement shows that the absorbance of the film with CN additive is significantly higher than the pristine film and the absorption peak is red shift by 30 nm, indicating the perovskite film with additive possessing better crystal structures. In-situ XRD study of the perovskite films with additive demonstrated intense diffraction peaks from MAPbI 3−x Cl x perovskite crystal planes of (110), (220), and (330). SEM images of the films with additive indicated the films were more smooth and homogenous with fewer pin-holes and voids and better surface coverage than the pristine films. These results implied that the additive CN is beneficial to regulate the crystallization transformation kinetics of perovskite to form high quality crystal films. The steady-state PL measurement suggested that the films with additive contained less charge traps and defects. The planar heterojunction perovskite solar cells fabricated from perovskite precursor solution containing CN additive demonstrated 30% enhancement in performance compared to the devices with pristine films. The improvement in device efficiency is mainly attributed to the good crystal structures, more homogenous film morphology, and also fewer trap centers and defects in the films with the additive

  14. Analysis of thin-film photonic crystal microstructures

    International Nuclear Information System (INIS)

    Pottage, John Mark

    2003-01-01

    Optical-scale microstructures containing thin-film photonic crystals (TFPCs) are modelled by transfer/scattering matrix methods, based on Fourier-series expansion of the optical Bloch eigenmodes. The majority of the TFPCs considered consist of 2D arrays of holes arranged in a triangular lattice, etched into high-index Al x Ga 1-x As and placed on a low-index oxidised substrate. These TFPCs can be easily fabricated by standard electron-beam lithography techniques. Unlike most photonic crystal devices that have been proposed, our 'intra-pass-band' TFPCs would work by exploiting the somewhat surprising properties of propagating optical Bloch waves rather than directly relying on photonic bandgaps. By numerical modelling, it is demonstrated that 2D-patterned TFPCs can support highly dispersive high-Q quasi-guided and truly-guided resonant modes, and the unusual properties of these modes are explained in terms of their Bloch-wave compositions. Modal dispersion diagrams of TFPCs, showing the loci of the resonant modes in in-plane wavevector space at fixed frequency, are calculated. These so-called 'resonance diagrams' and variants thereof, are shown to be a useful design tool for TFPC-based integrated optical components. It is suggested that TFPCs may be a viable alternative to distributed Bragg reflectors in semiconductor vertical cavity surface-emitting lasers, possessing potential advantages in terms of compactness and ease of fabrication. The high angular and spectral dispersion of the resonant modes implies that TFPCs could form the basis of a new family of compact devices for performing such functions as wavelength-division multiplexing/demultiplexing, beam-steering and frequency-selective filtering. Enhancement of nonlinear effects could also be achieved in TFPC resonators, because in them a high cavity Q-factor and a low in-plane group-velocity can be attained simultaneously. (author)

  15. Evaluation of single crystal coefficients from mechanical and x-ray elastic constants of the polycrystal

    International Nuclear Information System (INIS)

    Hauk, V.; Kockelmann, H.

    1979-01-01

    Methods of calculation are developed for determination of single crystal elastic compliance or stiffness constants of cubic and hexagonal materials from mechanical and X-ray elastic constants of polycrystals. The calculations are applied to pure, cubic iron and hexagonal WC. There are no single crystal constants in the literature for WC, because no single crystals suitable for measurement are available. (orig.) [de

  16. Two-dimensional photonic crystal bandedge laser with hybrid perovskite thin film for optical gain

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Hyungrae [Department of Biophysics and Chemical Biology, Seoul National University, Seoul 08826 (Korea, Republic of); Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826 (Korea, Republic of); Bae, Seunghwan [Department of Materials Science and Engineering, Seoul National University, Seoul 08826 (Korea, Republic of); Lee, Myungjae [Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826 (Korea, Republic of); Department of Physics and Astronomy, Seoul National University, Seoul 08826 (Korea, Republic of); Jeon, Heonsu, E-mail: hsjeon@snu.ac.kr [Department of Biophysics and Chemical Biology, Seoul National University, Seoul 08826 (Korea, Republic of); Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826 (Korea, Republic of); Department of Physics and Astronomy, Seoul National University, Seoul 08826 (Korea, Republic of)

    2016-05-02

    We report optically pumped room temperature single mode laser that contains a thin film of hybrid perovskite, an emerging photonic material, as gain medium. Two-dimensional square lattice photonic crystal (PhC) backbone structure enables single mode laser operation via a photonic bandedge mode, while a thin film of methyl-ammonium lead iodide (CH{sub 3}NH{sub 3}PbI{sub 3}) spin-coated atop provides optical gain for lasing. Two kinds of bandedge modes, Γ and M, are employed, and both devices laser in single mode at similar laser thresholds of ∼200 μJ/cm{sup 2} in pulse energy density. Polarization dependence measurements reveal a clear difference between the two kinds of bandedge lasers: isotropic for the Γ-point laser and highly anisotropic for the M-point laser. These observations are consistent with expected modal properties, confirming that the lasing actions indeed originate from the corresponding PhC bandedge modes.

  17. Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memory.

    Science.gov (United States)

    Wu, Weihua; Zhao, Zihan; Shen, Bo; Zhai, Jiwei; Song, Sannian; Song, Zhitang

    2018-04-19

    Amorphous Ge8Sb92 thin films with various thicknesses were deposited by magnetron sputtering. The crystallization kinetics and optical properties of the Ge8Sb92 thin films and related scaling effects were investigated by an in situ thermally induced method and an optical technique. With a decrease in film thickness, the crystallization temperature, crystallization activation energy and data retention ability increased significantly. The changed crystallization behavior may be ascribed to the smaller grain size and larger surface-to-volume ratio as the film thickness decreased. Regardless of whether the state was amorphous or crystalline, the film resistance increased remarkably as the film thickness decreased to 3 nm. The optical band gap calculated from the reflection spectra increases distinctly with a reduction in film thickness. X-ray diffraction patterns confirm that the scaling of the Ge8Sb92 thin film can inhibit the crystallization process and reduce the grain size. The values of exponent indices that were obtained indicate that the crystallization mechanism experiences a series of changes with scaling of the film thickness. The crystallization time was estimated to determine the scaling effect on the phase change speed. The scaling effect on the electrical switching performance of a phase change memory cell was also determined. The current-voltage and resistance-voltage characteristics indicate that phase change memory cells based on a thinner Ge8Sb92 film will exhibit a higher threshold voltage, lower RESET operational voltage and greater pulse width, which implies higher thermal stability, lower power consumption and relatively lower switching velocity.

  18. Plastic deformation of Ni3Nb single crystals

    International Nuclear Information System (INIS)

    Hagihara, Kouji; Nakano, Takayoshi; Umakoshi, Yukichi

    1999-01-01

    Temperature dependence of yield stress and operative slip system in Ni 3 Nb single crystals with the D0 a structure was investigated in comparison with that in an analogous L1 2 structure. Compression tests were performed at temperatures between 20 C and 1,200 C for specimens with loading axes perpendicular to (110), (331) and (270). (010)[100] slip was operative for three orientations, while (010)[001] slip for (331) and [211] twin for (270) orientations were observed, depending on deformation temperature. The critical resolved shear stress (CRSS) for the (010)[100] slip anomaly increased with increasing temperature showing a maximum peak between 400 C and 800 C depending on crystal orientation. The CRSS showed orientation dependence and no significant strain rate dependence in the temperature range for anomalous strengthening. The [100] dislocations with a screw character were aligned on the straight when the anomalous strengthening occurred. The anomalous strengthening mechanism for (010)[100] slip in Ni 3 Nb single crystals is discussed on the basis of a cross slip model which has been widely accepted for some L1 2 -type compounds

  19. Strength anomaly in B2 FeAl single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yoshimi, K.; Hanada, S.; Yoo, M.H. [Oak Ridge National Lab., TN (United States); Matsumoto, N. [Tohoku Univ. (Japan). Graduate School

    1994-12-31

    Strength and deformation microstructure of B2 Fe-39 and 48%Al single crystals (composition given in atomic percent), which were fully annealed to remove frozen-in vacancies, have been investigated at temperatures between room temperature and 1073K. The hardness of as-homogenized Fe-48Al is higher than that of as-homogenized Fe-39Al while after additional annealing at 698K the hardness of Fe-48Al becomes lower than that of Fe-39Al. Fe-39Al single crystals slowly cooled after homogenizing at a high temperature were deformed in compression as a function of temperature and crystal orientation. A peak of yield strength appears around 0.5T{sub m} (T{sub m} = melting temperature). The orientation dependence of the critical resolved shear stress does not obey Schmid`s law even at room temperature and is quite different from that of b.c.c. metals and B2 intermetallics at low temperatures. At the peak temperature slip transition from <111>-type to <001>-type is found to occur macroscopically and microscopically, while it is observed in TEM that some of the [111] dislocations decompose into [101] and [010] on the (1096I) plane below the peak temperature. The physical sources for the positive temperature dependence of yield stress of B2 FeAl are discussed based on the obtained results.

  20. Micromechanical Behavior of Single-Crystal Superalloy with Different Crystal Orientations by Microindentation

    Directory of Open Access Journals (Sweden)

    Jinghui Li

    2015-01-01

    Full Text Available In order to investigate the anisotropic micromechanical properties of single-crystal nickel-based superalloy DD99 of four crystallographic orientations, (001, (215, (405, and (605, microindentation test (MIT was conducted with different loads and loading velocities by a sharp Berkovich indenter. Some material parameters reflecting the micromechanical behavior of DD99, such as microhardness H, Young’s modulus E, yield stress σy, strain hardening component n, and tensile strength σb, can be obtained from load-displacement relations. H and E of four different crystal planes evidently decrease with the increase of h. The reduction of H is due to dislocation hardening while E is related to interplanar spacing and crystal variable. σy of (215 is the largest among four crystal planes, followed by (605, and (001 has the lowest value. n of (215 is the lowest, followed by (605, and that of (001 is the largest. Subsequently, a simplified elastic-plastic material model was employed for 3D microindentation simulation of DD99 with various crystal orientations. The simulation results agreed well with experimental, which confirmed the accuracy of the simplified material model.

  1. Crystal growth and optical properties of Sm:CaNb2O6 single crystal

    International Nuclear Information System (INIS)

    Di Juqing; Xu Xiaodong; Xia Changtai; Zeng Huidan; Cheng Yan; Li Dongzhen; Zhou Dahua; Wu Feng; Cheng Jimeng; Xu Jun

    2012-01-01

    Highlights: ► Sm:CaNb 2 O 6 single crystal was grown by the Czochralski method. ► Thermal expansion coefficients and J–O parameters were calculated. ► We found that this crystal had high quantum efficiency of 97%. - Abstract: Sm:CaNb 2 O 6 single crystal has been grown by the Czochralski method. Its high-temperature X-ray powder diffraction, optical absorption, emission spectroscopic as well as lifetime have been studied. Thermal expansion coefficients (α), J–O parameters (Ω i ), radiative lifetime (τ rad ), branching ratios (β) and stimulated emission cross-sections (σ e ) were calculated. The quantum efficiency (η) was calculated to be 97%. The intense peak emission cross section at 610, 658 nm were calculated to be 2.40 × 10 −21 , 2.42 × 10 −21 cm 2 . These results indicate that Sm:CaNb 2 O 6 crystal has potential use in visible laser and photonic devices area.

  2. Crystal growth and luminescence properties of Pr-doped LuLiF4 single crystal

    International Nuclear Information System (INIS)

    Sugiyama, Makoto; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Fujimoto, Yutaka; Yoshikawa, Akira

    2013-01-01

    0.1, 1, and 3% Pr (with respect to Lu) doped LuLiF 4 (Pr:LuLiF 4 ) single crystals were grown by the micro-pulling-down (μ-PD) method. Transparency of the grown crystals was higher than 70% in the visible wavelength region with some absorption bands due to Pr 3+ 4f-4f transitions. Intense absorption bands related with the Pr 3+ 4f-5d transitions were observed at 190 and 215 nm. In radioluminescence spectra, Pr 3+ 5d-4f emissions were observed at 220, 240, 340, and 405 nm. In the pulse height spectra recorded under 137 Cs γ-ray excitation, the Pr 3% doped sample showed the highest light yield of 2050 photons/MeV and the scintillation decay time of it exhibited 23 and 72 ns also excited by 137 Cs γ-ray. -- Highlights: ► 0.1, 1, and 3% Pr-doped LuLiF 4 single crystals were grown by the μ-PD method. ► Pr 3+ 5d-4f emission peaks appeared at 220, 240, 340, and 405 nm ► The Pr 3%:LuLiF 4 crystal showed the highest light yield of 2050 photons/MeV

  3. Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

    KAUST Repository

    Oba, Tatsuya

    2012-06-19

    We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films. The axial position of the dye molecules across the thickness of the film was determined with a resolution of 12 nm by analyzing astigmatic fluorescence images. The average relaxation times of the rotating molecules do not depend on the overall thickness of the film between 20 and 110 nm. The relaxation times also do not show any dependence on the axial position within the films for the film thickness between 70 and 110 nm. In addition to the rotating molecules we observed a fraction of spatially diffusing molecules and completely immobile molecules. These molecules indicate the presence of thin (<5 nm) high-mobility surface layer and low-mobility layer at the interface with the substrate. (Figure presented) © 2012 American Chemical Society.

  4. Magnetotransport investigations of single- and heterostructure epitaxial films of IV/VI-semiconductors

    International Nuclear Information System (INIS)

    Ambrosch, K.-E.

    1985-01-01

    Lead salts are small gap semiconductors that are used for infrared detectors and lasers. PbMnTe and PbEuTe are semimagnetic semiconductors. Magnetotransport properties of epitaxial films and epitaxial heterostructures (PbTe / PbSnTe) are investigated. Epitaxial films of PbSnTe, PbMnTe and PbEuTe have been used for Shubnikov de Haas - experiments in tilted magnetic fields. This method allows the quantitative determination of the electric carrier distribution with respect to the crystal directions. The nonequal distribution is caused by strain effects that are more important for PbMnTe than for PbSnTe and PbEuTe. Magnetoresistance experiments show a deviation from cubic symmetry that leads to the same results for the carrier distribution as the Shubnikov de Haas effect. Magnetoresistance experiments performed with PbTe / PbSnTe heterostructures show no megnetoresistance if the magnetic field is in plane with the layers. The difference of the magnetoresistance for single films and heterostructures is explained by 'quasitwodimensional' carriers. Shubnikov de Haas experiments performed on heterostructures as a function of the tilt angle of the magnetic field show different behaviour compared to that of single films. Using additional information about effective masses and strain it was possible to distinguish between 'two-' and 'threedimensional' electronic systems. The distribution of carriers in single films and heterostructures has been determined by means of magnetotransport experiments. The results are explained by strain effects of the crystal lattice. In addition heterostructures show a 'quasitwodimensional' behaviour caused by interaction of their layers. (Author)

  5. Polarised IR-microscope spectra of guanidinium hydrogensulphate single crystal.

    Science.gov (United States)

    Drozd, M; Baran, J

    2006-07-01

    Polarised IR-microscope spectra of C(NH(2))(3)*HSO(4) small single crystal samples were measured at room temperature. The spectra are discussed on the basis of oriented gas model approximation and group theory. The stretching nuOH vibration of the hydrogen bond with the Ocdots, three dots, centeredO distance of 2.603A gives characteristic broad AB-type absorption in the IR spectra. The changes of intensity of the AB bands in function of polariser angle are described. Detailed assignments for bands derived from stretching and bending modes of sulphate anions and guanidinium cations were performed. The observed intensities of these bands in polarised infrared spectra were correlated with theoretical calculation of directional cosines of selected transition dipole moments for investigated crystal. The vibrational studies seem to be helpful in understanding of physical and chemical properties of described compound and also in design of new complexes with exactly defined behaviors.

  6. Polarized IR-microscope spectra of guanidinium hydrogenselenate single crystal.

    Science.gov (United States)

    Drozd, M; Baran, J

    2005-10-01

    The polarized IR-microscope spectra of C(NH2)3.HSeO4 small single crystal samples were measured at room temperature. The spectra are discussed with the framework of oriented gas model approximation and group theory. The stretching nuOH vibration of the hydrogen bond with the O...O distance of 2.616 A gives characteristic broad AB-type absorption in the IR spectra. The changes of intensity of the AB bands in function of polarizer angle are described. Detailed assignment for bands derived from stretching and bending modes of selenate anions and guanidinium cations were performed. The observed intensities of these bands in polarized infrared spectra were correlated with theoretical calculation of directional cosines of selected transition dipole moments for investigated crystal. The vibrational studies seem to be helpful in understanding of physical and chemical properties of described compound and also in design of new complexes with exactly defined behaviors.

  7. Giant negative photoresistance of ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Barzola-Quiquia, Jose; Esquinazi, Pablo [Division of Superconductivity and Magnetism, University of Leipzig (Germany); Heluani, Silvia [Laboratorio de Fisica del Solido, FCEyT, Universidad Nacional de Tucuman, 4000 S. M. de Tucuman (Argentina); Villafuerte, Manuel [Dept. de Fisica, FCEyT, Universidad Nacional de Tucuman (Argentina); CONICET, Tucuman (Argentina); Poeppl, Andreas [Division of Magnetic Resonance of Complex Quantum Solids, University of Leipzig, D-04103 Leipzig (Germany)

    2011-07-01

    ZnO is a wide band gap semiconductor exhibiting the largest charge-carrier mobility among oxides. ZnO is a material with potential applications for short-wavelength optoelectronic devices, as a blue light emitting diodes and in spintronics. In this contribution we have measured the temperature dependence (30 K < T < 300 K) of the electrical resistance of ZnO single crystals prepared by hydrothermal method in darkness and under the influence of light in the ultraviolet range. The resistance decreases several orders of magnitude at temperatures T < 200 K after illumination. Electron paramagnetic resonance studies under illumination reveal that the excitation of Li acceptor impurities is the origin for the giant negative photoresistance effect. Permanent photoresistance effect is also observed, which remains many hours after leaving the crystal in darkness.

  8. Thermal conductivity of niobium single crystals in a magnetic field

    International Nuclear Information System (INIS)

    Gladun, C.; Vinzelberg, H.

    1980-01-01

    The thermal conductivity in longitudinal magnetic fields up to 5 T and in the temperature range 3.5 to 15 K is measured in two high purity niobium single crystals having residual resistivity ratios of 22700 and 19200 and orientations of the rod axis [110] and [100]. The investigations show that by means of the longitudinal magnetic field the thermal conductivity may decrease only to a limiting value. In the crystal directions [110] and [100] for the ratio of the thermal conductivity in zero field and the thermal conductivity in the saturation field the temperature-independent factors 1.92 and 1.27, respectively, are determined. With the aid of these factors the thermal conductivity in the normal state is evaluated from the measured values of thermal conductivity below Tsub(c) in the magnetic field. The different conduction and scattering mechanisms are discussed. (author)

  9. Preparation of high purity yttrium single crystals by electrotransport

    International Nuclear Information System (INIS)

    Volkov, V.T.; Nikiforova, T.V.; Ionov, A.M.; Pustovit, A.N.; Sikharulidse, G.G.

    1981-01-01

    The possibility of obtaining yttrium crystals of high purity by the method of solid state electrotransport (SSE) was investigated in the present work. The behaviour of low contents of iron, aluminium, silicon, tantalum, copper, silver and vanadium as metallic impurities was studied using mass spectrometry. It is shown that all the impurities investigated, except copper, migrate to the anode. During electrotransfer a purification with respect to these impurities by a factor of 4 - 6 is obtained. It is proposed that the diffusion coefficients of the metallic impurities investigated are anomalously high and that the behaviour of the impurities during SSE in adapters necessitates further investigation. By using a three-stage process with intermediate removal of the anode end yttrium single crystals with a resistance ratio rho 293 /rhosub(4.2)=570 were produced. (Auth.)

  10. Temperature and fluence effects in lead implanted cobalt single crystals

    International Nuclear Information System (INIS)

    Johansen, A.; Sarholt-Kristensen, L.; Johnson, E.; Steenstrup, S.; Chernysh, V.S.

    1988-01-01

    The channeled sputtering yields of the hcp and fcc phases of cobalt depend on the crystal structure and the radiation induced damage. Earlier irradiations of cobalt with argon ions channeled in the hcp direction give sputtering yields higher than expected in the temperature range 100-350deg C. This effect was attributed to a combination of radiation induced damage and a possible implantation induced hcp --> fcc phase transition. Sputtering yields for cobalt single crystals irradiated with 150 keV Pb + ions along the direction of the hcp phase and the direction of the fcc phase have been measured using the weightloss method. The radiation damage and the amount of lead retained in the implanted surface has been investigated by 'in situ' RBS/channeling analysis. Measured partial sputtering yields of lead ≅ 1 atom/ion indicate preferential sputtering of lead atoms. (orig.)

  11. Single molecule studies of solvent-dependent diffusion and entrapment in poly(dimethylsiloxane) thin films.

    Science.gov (United States)

    Lange, Jeffrey J; Culbertson, Christopher T; Higgins, Daniel A

    2008-12-15

    Single molecule microscopic and spectroscopic methods are employed to probe the mobility and physical entrapment of dye molecules in dry and solvent-loaded poly(dimethylsiloxane) (PDMS) films. PDMS films of approximately 220 nm thickness are prepared by spin casting dilute solutions of Sylgard 184 onto glass coverslips, followed by low temperature curing. A perylene diimide dye (BPPDI) is used to probe diffusion and molecule-matrix interactions. Two classes of dye-loaded samples are investigated: (i) those incorporating dye dispersed throughout the films ("in film" samples) and (ii) those in which the dye is restricted primarily to the PDMS surface ("on film" samples). Experiments are performed under dry nitrogen and at various levels of isopropyl alcohol (IPA) loading from the vapor phase. A PDMS-coated quartz-crystal microbalance is employed to monitor solvent loading and drying of the PDMS and to ensure equilibrium conditions are achieved. Single molecules are shown to be predominantly immobile under dry conditions and mostly mobile under IPA-saturated conditions. Quantitative methods for counting the fluorescent spots produced by immobile single molecules in optical images of the samples demonstrate that the population of mobile molecules increases nonlinearly with IPA loading. Even under IPA saturated conditions, the population of fixed molecules is found to be greater than zero and is greatest for "in film" samples. Fluorescence correlation spectroscopy is used to measure the apparent diffusion coefficient for the mobile molecules, yielding a mean value of D = 1.4(+/-0.4) x 10(-8) cm(2)/s that is virtually independent of IPA loading and sample class. It is concluded that a nonzero population of dye molecules is physically entrapped within the PDMS matrix under all conditions. The increase in the population of mobile molecules under high IPA conditions is attributed to the filling of film micropores with solvent, rather than by incorporation of molecularly

  12. Single-Photon Source for Quantum Information Based on Single Dye Molecule Fluorescence in Liquid Crystal Host

    International Nuclear Information System (INIS)

    Lukishova, S.G.; Knox, R.P.; Freivald, P.; McNamara, A.; Boyd, R.W.; Stroud, Jr. C.R.; Schmid, A.W.; Marshall, K.L.

    2006-01-01

    This paper describes a new application for liquid crystals: quantum information technology. A deterministically polarized single-photon source that efficiently produces photons exhibiting antibunching is a pivotal hardware element in absolutely secure quantum communication. Planar-aligned nematic liquid crystal hosts deterministically align the single dye molecules which produce deterministically polarized single (antibunched) photons. In addition, 1-D photonic bandgap cholesteric liquid crystals will increase single-photon source efficiency. The experiments and challenges in the observation of deterministically polarized fluorescence from single dye molecules in planar-aligned glassy nematic-liquid-crystal oligomer as well as photon antibunching in glassy cholesteric oligomer are described for the first time

  13. Parylene-C microfibrous thin films as phononic crystals

    Science.gov (United States)

    Chindam, Chandraprakash; Lakhtakia, Akhlesh; Awadelkarim, Osama O.

    2017-07-01

    Phononic bandgaps of Parylene-C microfibrous thin films ( μ\\text{FTF} s) were computationally determined by treating them as phononic crystals comprising identical microfibers arranged either on a square or a hexagonal lattice. The microfibers could be columnar, chevronic, or helical in shape, and the host medium could be either water or air. All bandgaps were observed to lie in the 0.01-162.9-MHz regime, for microfibers of realistically chosen dimensions. The upper limit of the frequency of bandgaps was the highest for the columnar μ\\text{FTF} and the lowest for the chiral μ\\text{FTF} . More bandgaps exist when the host medium is water than air. Complete bandgaps were observed for the columnar μ\\text{FTF} with microfibers arranged on a hexagonal lattice in air, the chevronic μ\\text{FTF} with microfibers arranged on a square lattice in water, and the chiral μ\\text{FTF} with microfibers arranged on a hexagonal lattice in either air or water. The softness of the Parylene-C μ\\text{FTF} s makes them mechanically tunable, and their bandgaps can be exploited in multiband ultrasonic filters.

  14. Effect of the Ultrasonic Substrate Vibration on Nucleation and Crystallization of PbI2 Crystals and Thin Films

    Directory of Open Access Journals (Sweden)

    Fatemeh Zabihi

    2018-01-01

    Full Text Available Preparation of defect-free and well-controlled solution-processed crystalline thin films is highly desirable for emerging technologies, such as perovskite solar cells. In this work, using PbI2 as a model solution with a vast variety of applications, we demonstrate that the excitation of a liquid thin film by imposed ultrasonic vibration on the film substrate significantly affects the nucleation and crystallization kinetics of PbI2 and the morphology of the resulting solid thin film. It is found that by applying ultrasonic vibration to PbI2 solution spun onto an ITO substrate with a moderate power and excitation duration (5 W and 1 min for the 40 kHz transducer used in this study, the nucleation rate increases and the crystals transform from 2D or planar to epitaxial 3D columnar structures, resulting in the suppression of crystallization dewetting. The effects of various induced physical phenomena as a result of the excitation by ultrasonic vibration are discussed, including microstreaming and micromixing, increased heat transfer and local temperature, a change in the thermodynamic state of the solution, and a decrease in the supersaturation point. It is shown that the ultrasonic-assisted solution deposition of the PbI2 thin films is controllable and reproducible, a process which is low-cost and in line with the large-scale fabrication of such solution-processed thin films.

  15. Praseodymium Cuprate Thin Film Cathodes for Intermediate Temperature Solid Oxide Fuel Cells: Roles of Doping, Orientation, and Crystal Structure.

    Science.gov (United States)

    Mukherjee, Kunal; Hayamizu, Yoshiaki; Kim, Chang Sub; Kolchina, Liudmila M; Mazo, Galina N; Istomin, Sergey Ya; Bishop, Sean R; Tuller, Harry L

    2016-12-21

    Highly textured thin films of undoped, Ce-doped, and Sr-doped Pr 2 CuO 4 were synthesized on single crystal YSZ substrates using pulsed laser deposition to investigate their area-specific resistance (ASR) as cathodes in solid-oxide fuel cells (SOFCs). The effects of T' and T* crystal structures, donor and acceptor doping, and a-axis and c-axis orientation on ASR were systematically studied using electrochemical impedance spectroscopy on half cells. The addition of both Ce and Sr dopants resulted in improvements in ASR in c-axis oriented films, as did the T* crystal structure with the a-axis orientation. Pr 1.6 Sr 0.4 CuO 4 is identified as a potential cathode material with nearly an order of magnitude faster oxygen reduction reaction kinetics at 600 °C compared to thin films of the commonly studied cathode material La 0.6 Sr 0.4 Co 0.8 Fe 0.2 O 3-δ . Orientation control of the cuprate films on YSZ was achieved using seed layers, and the anisotropy in the ASR was found to be less than an order of magnitude. The rare-earth doped cuprate was found to be a versatile system for study of relationships between bulk properties and the oxygen reduction reaction, critical for improving SOFC performance.

  16. CH3NH3PbCl3 Single Crystals: Inverse Temperature Crystallization and Visible-Blind UV-Photodetector

    KAUST Repository

    Maculan, Giacomo; Sheikh, Arif D.; Abdelhady, Ahmed L.; Saidaminov, Makhsud I.; Haque, Mohammed; Banavoth, Murali; Alarousu, Erkki; Mohammed, Omar F.; Wu, Tao; Bakr, Osman

    2015-01-01

    a new method of sizeable CH3NH3PbCl3 single crystal growth based on retrograde solubility behavior of hybrid perovskites. We show, for the first time, the energy band structure, charge-carrier recombination and transport properties of single crystal

  17. Magnetic order of Nd5Pb3 single crystals

    Science.gov (United States)

    Yan, J.-Q.; Ochi, M.; Cao, H. B.; Saparov, B.; Cheng, J.-G.; Uwatoko, Y.; Arita, R.; Sales, B. C.; Mandrus, D. G.

    2018-04-01

    We report millimeter-sized Nd5Pb3 single crystals grown out of a Nd-Co flux. We experimentally study the magnetic order of Nd5Pb3 single crystals by measuring the anisotropic magnetic properties, electrical resistivity under high pressure up to 8 GPa, specific heat, and neutron single crystal diffraction. Two successive magnetic orders are observed at T N1  =  44 K and T N2  =  8 K. The magnetic cells can be described with a propagation vector k=(0.5, 0, 0) . Cooling below T N1, Nd1 and Nd3 order forming ferromagnetic stripes along the b-axis, and the ferromagnetic stripes are coupled antiferromagnetically along the a-axis for the k=(0.5, 0, 0) magnetic domain. Cooling below T N2, Nd2 orders antiferromagnetically to nearby Nd3 ions. All ordered moments align along the crystallographic c-axis. The magnetic order at T N1 is accompanied by a quick drop of electrical resistivity upon cooling and a lambda-type anomaly in the temperature dependence of specific heat. At T N2, no anomaly was observed in electrical resistivity but there is a weak feature in specific heat. The resistivity measurements under hydrostatic pressures up to 8 GPa suggest a possible phase transition around 6 GPa. Our first-principles band structure calculations show that Nd5Pb3 has the same electronic structure as does Y5Si3 which has been reported to be a one-dimensional electride with anionic electrons that do not belong to any atom. Our study suggests that R 5Pb3 (R  =  rare earth) can be a materials playground for the study of magnetic electrides. This deserves further study after experimental confirmation of the presence of anionic electrons.

  18. Anisotropic Thermoelectric Devices Made from Single-Crystal Semimetal Microwires in Glass Coating

    Science.gov (United States)

    Konopko, L. A.; Nikolaeva, A. A.; Kobylianskaya, A. K.; Huber, T. E.

    2018-06-01

    Thermoelectric heat conversion based on the Seebeck and Peltier effects generated at the junction between two materials of type- n and type- p is well known. Here, we present a demonstration of an unconventional thermoelectric energy conversion that is based on a single element made of an anisotropic material. In such materials, a heat flow generates a transverse thermoelectric electric field lying across the heat flow. Potentially, in applications involving miniature devices, the anisotropic thermoelectric (AT) effect has the advantage over traditional thermoelectrics that it simplifies the thermoelectric generator architecture. This is because the generator can be made of a single thermoelectric material without the complexity of a series of contacts forming a pile. A feature of anisotropic thermoelectrics is that the thermoelectric voltage is proportional to the element length and inversely proportional to the effective thickness. The AT effect has been demonstrated with artificial anisotropic thin film consisting of layers of alternating thermoelectric type, but there has been no demonstration of this effect in a long single-crystal. Electronic transport measurements have shown that the semimetal bismuth is highly anisotropic. We have prepared an experimental sample consisting of a 10-m-long glass-insulated single-crystal tin-doped bismuth microwire ( d = 4 μm). Crucial for this experiment is the ability to grow the microwire as a single-crystal using a technique of recrystallization with laser heating and under a strong electric field. The sample was wound as a spiral, bonded to a copper disk, and used in various experiments. The sensitivity of the sample to heat flow is as high as 10-2 V/W with a time constant τ of about 0.5 s.

  19. Anisotropic Thermoelectric Devices Made from Single-Crystal Semimetal Microwires in Glass Coating

    Science.gov (United States)

    Konopko, L. A.; Nikolaeva, A. A.; Kobylianskaya, A. K.; Huber, T. E.

    2018-04-01

    Thermoelectric heat conversion based on the Seebeck and Peltier effects generated at the junction between two materials of type-n and type-p is well known. Here, we present a demonstration of an unconventional thermoelectric energy conversion that is based on a single element made of an anisotropic material. In such materials, a heat flow generates a transverse thermoelectric electric field lying across the heat flow. Potentially, in applications involving miniature devices, the anisotropic thermoelectric (AT) effect has the advantage over traditional thermoelectrics that it simplifies the thermoelectric generator architecture. This is because the generator can be made of a single thermoelectric material without the complexity of a series of contacts forming a pile. A feature of anisotropic thermoelectrics is that the thermoelectric voltage is proportional to the element length and inversely proportional to the effective thickness. The AT effect has been demonstrated with artificial anisotropic thin film consisting of layers of alternating thermoelectric type, but there has been no demonstration of this effect in a long single-crystal. Electronic transport measurements have shown that the semimetal bismuth is highly anisotropic. We have prepared an experimental sample consisting of a 10-m-long glass-insulated single-crystal tin-doped bismuth microwire (d = 4 μm). Crucial for this experiment is the ability to grow the microwire as a single-crystal using a technique of recrystallization with laser heating and under a strong electric field. The sample was wound as a spiral, bonded to a copper disk, and used in various experiments. The sensitivity of the sample to heat flow is as high as 10-2 V/W with a time constant τ of about 0.5 s.

  20. Infrared absorption in PbTe single crystals

    International Nuclear Information System (INIS)

    Kudykina, T.A.

    1982-01-01

    A group-theoretical analysis is conducted to select rules for optical transitions between bands in PbTe single crystals. It is shown that transitions between valence bands which are near a forbidden band are also forbidden. The extra absorption observed in p-PbTe and p-Pbsub(1-x)Snsub(x)Te in the region between the self-absorption edge and the free-carrier absorption edge is probably connected with transitions between one of valence bands and the p-state of the impurity

  1. Pyroelectric effect in tryglicyne sulphate single crystals - Differential measurement method

    Science.gov (United States)

    Trybus, M.

    2018-06-01

    A simple mathematical model of the pyroelectric phenomenon was used to explain the electric response of the TGS (triglycine sulphate) samples in the linear heating process in ferroelectric and paraelectric phases. Experimental verification of mathematical model was realized. TGS single crystals were grown and four electrode samples were fabricated. Differential measurements of the pyroelectric response of two different regions of the samples were performed and the results were compared with data obtained from the model. Experimental results are in good agreement with model calculations.

  2. The sublimation kinetics of GeSe single crystals

    Science.gov (United States)

    Irene, E. A.; Wiedemeier, H.

    1975-01-01

    The sublimation kinetics of (001) oriented GeSe single crystal platelets was studied by high-temperature mass spectroscopy, quantitative vacuum microbalance techniques, and hot stage optical microscopy. For a mean experimental temperature of 563 K, the activation enthalpy and entropy are found to equal 32.3 kcal/mole and 19.1 eu, respectively. The vaporization coefficient is less than unity for the range of test temperatures, and decreases with increasing temperature. The combined experimental data are correlated by means of a multistep surface adsorption mechanism.

  3. EPR studies of gamma-irradiated taurine single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Bulut, A. E-mail: abulut@samsun.omu.edu.tr; Karabulut, B.; Tapramaz, R.; Koeksal, F

    2000-04-01

    An EPR study of gamma-irradiated taurine [C{sub 2}H{sub 7}NO{sub 3}S] single crystal was carried out at room temperature. The EPR spectra were recorded in the three at mutually perpendicular planes. There are two magnetically distinct sites in monoclinic lattice. The principle values of g and hyperfine constants for both sites were calculated. The results have indicated the presence of {sup 32}SO{sup -}{sub 2} and {sup 33}SO{sup -}{sub 2} radicals. The hyperfine values of {sup 33}SO{sup -}{sub 2} radical were used to obtain O-S-O bond angle for both sites.

  4. EPR studies of gamma-irradiated taurine single crystals

    International Nuclear Information System (INIS)

    Bulut, A.; Karabulut, B.; Tapramaz, R.; Koeksal, F.

    2000-01-01

    An EPR study of gamma-irradiated taurine [C 2 H 7 NO 3 S] single crystal was carried out at room temperature. The EPR spectra were recorded in the three at mutually perpendicular planes. There are two magnetically distinct sites in monoclinic lattice. The principle values of g and hyperfine constants for both sites were calculated. The results have indicated the presence of 32 SO - 2 and 33 SO - 2 radicals. The hyperfine values of 33 SO - 2 radical were used to obtain O-S-O bond angle for both sites

  5. Lattice effects in HoVo3 single crystal

    International Nuclear Information System (INIS)

    Sikora, M.; Marquina, C.; Ibarra, M.R.; Nugroho, A.A.; Palstra, T.T.M.

    2007-01-01

    We report the study of lattice effects in the Mott insulator HoVO 3 performed by means of linear thermal expansion on a single crystal in the temperature range 10-290 K. The holmium orthovanadate HoVO 3 reveals gradual orbital ordering (OO) below T OO =200 K and orders antiferromagnetically at T N =113 K. A first-order structural phase transition takes place at T S ∼38 K, which is probably accompanied by change of the OO type and hence the type of antiferromagnetic spin ordering

  6. Radiation defects produced by neutron irradiation in germanium single crystals

    International Nuclear Information System (INIS)

    Fukuoka, Noboru; Honda, Makoto; Atobe, Kozo; Yamaji, Hiromichi; Ide, Mutsutoshi; Okada, Moritami.

    1992-01-01

    The nature of defects produced in germanium single crystals by neutron irradiation at 25 K was studied by measuring the electrical resistivity. It was found that two levels located at E c -0.06 eV and E c -0.13 eV were introduced in an arsenic-doped sample. Electron traps at E c -0.10eV were observed in an indium-doped sample. The change in electrical resistivity during irradiation was also studied. (author)

  7. Single crystal NMR studies of high temperature superconductors

    International Nuclear Information System (INIS)

    Pennington, C.H.; Durand, D.J.; Zax, D.B.; Slichter, C.P.; Rice, J.P.; Bukowski, E.D.; Ginsberg, D.M.

    1989-01-01

    The authors report Cu NMR studies in the normal state of a single crystal of the T/sub c/ = 90 K superconductor YBa 2 Cu 3 O/sub 7/minus/δ/. The authors have measured the magnetic shift tensor, the electric field gradient tensor, the nuclear spin-lattice relaxation rate tensor, and the time dependence and functional form of the transverse decay. From these data they obtain information about the charge state and magnetic state of the Cu atoms, and the existence and size of the electronic exchange coupling between spins of adjacent Cu atoms. 18 refs., 3 figs., 2 tabs

  8. Nonstoichiometry and conductivity anisotropy of lead germanate single crystals

    International Nuclear Information System (INIS)

    Jermakov, O.S.; Duda, V.M.

    2010-01-01

    The conductivity of lead germanate single crystals with the stoichiometric composition, PbO deficiency, and PbO excess has been measured. A reduction of the PbO fraction in the initial blend leads to a considerable increase of the conductivity, because the fraction of lead ions which change their valency from Pb 2+ to Pb 3+ grows. The relative arrangement of lead ions, which are able to change their valency and trap holes, can be responsible for a significant anisotropy of conductivity.

  9. Magnetic anisotropy of YNi2B2C single crystals

    International Nuclear Information System (INIS)

    Baran, M.; Gladczuk, L.; Gorecka, J.; Szymczak, H.; Szymczak, R.; Drzazga, Z.; Winiarska, H.

    1994-01-01

    Reversible and irreversible magnetization processes in YNi 2 B 2 C single crystal have been measured and analysed in terms of existing theories. Performed measurements suggest that anisotropy of the effective mass in YNi 2 B 2 C superconductor is rather small and similar to that observed in conventional superconductors. Effect of hydrostatic pressure on T c is shown to be typical of low-temperature superconductors. It is suggested that the layered structure of YNi 2 B 2 C has some effect on the irreversible magnetization processes observed in this superconductor. ((orig.))

  10. Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization

    Science.gov (United States)

    Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu

    2018-06-01

    Electrical phase change device using the Ge-doped eutectic Sb-Te (e.g., Ge1Sb8Te2) film is known to exhibit improved energy efficiency thanks to lowered threshold voltage as well as decreased power consumption for the reset operation, as compared with Ge2Sb2Te5 film. Ge K-edge EXAFS analysis is employed in this study in an effort to elucidate such merits of Ge1Sb8Te2 film in connection with its local atomic arrangements. It is then verified that a Ge atom is four-fold coordinated in its nearest-neighboring shell both in the as-deposited and in the annealed films. It needs to be highlighted that approximately two Sb atoms constitute the Ge tetrahedral units in its amorphous state; however, after being crystallized, heteropolar Ge-Sb bonds hardly exist in this Ge1Sb8Te2 film. It has been known that crystallization temperature and activation energy for crystallization of this Ge1Sb8Te2 composition are greater than those of Ge2Sb2Te5 composition. In addition, these two phase change materials exhibit distinctly different crystallization mechanisms, i.e., nucleation-dominant for Ge2Sb2Te5 film but growth-dominant for Ge1Sb8Te2 film. These discrepancies in the crystallization-related properties are delineated in terms of the local structural changes verified from the present EXAFS analysis.

  11. Anisotropic magnetoresistance and anomalous Nernst effect in exchange biased permalloy/(1 0 0) NiO single-crystal

    Energy Technology Data Exchange (ETDEWEB)

    Holanda, J., E-mail: joseholanda@df.ufpe.br; Maior, D.S.; Azevedo, A.; Rezende, S.M.

    2017-06-15

    Highlights: • We have investigated the anisotropic magnetoresistance (AMR) and the anomalous Nernst effect (ANE) in an exchange-biased bilayer Py/(100) NiO single-Crystal. • The shift of the hysteresis loop, measured with the different techniques, yield approximately the same value of H{sub EB}. • In spite of the measurement techniques be based in different physical phenomena, our results confirm the robustness of the exchange anisotropy at the Py/NiO interface. • The strength of the anomalous Nernst effect for the exchange-biased permalloy film is compared to values measured in non biased films. - Abstract: We have investigated the anisotropic magnetoresistance (AMR) and the anomalous Nernst effect (ANE) in an exchange-biased bilayer consisting of a thin film of permalloy deposited on a single crystal antiferromagnetic NiO (1 0 0). The exchange bias field (H{sub EB}) value was obtained by means of AMR, ANE and magnetization hysteresis measurements. The shift of the hysteresis loop, measured with the three different techniques, yield approximately the same value of H{sub EB.} In spite of the measurement techniques be based in different physical phenomena, our results confirm the robustness of the exchange anisotropy at the Py/NiO interface. The strength of the anomalous Nernst effect for the exchange-biased permalloy film is compared to values measured in non biased films.

  12. Defect sensitive etching of hexagonal boron nitride single crystals

    Science.gov (United States)

    Edgar, J. H.; Liu, S.; Hoffman, T.; Zhang, Yichao; Twigg, M. E.; Bassim, Nabil D.; Liang, Shenglong; Khan, Neelam

    2017-12-01

    Defect sensitive etching (DSE) was developed to estimate the density of non-basal plane dislocations in hexagonal boron nitride (hBN) single crystals. The crystals employed in this study were precipitated by slowly cooling (2-4 °C/h) a nickel-chromium flux saturated with hBN from 1500 °C under 1 bar of flowing nitrogen. On the (0001) planes, hexagonal-shaped etch pits were formed by etching the crystals in a eutectic mixture of NaOH and KOH between 450 °C and 525 °C for 1-2 min. There were three types of pits: pointed bottom, flat bottom, and mixed shape pits. Cross-sectional transmission electron microscopy revealed that the pointed bottom etch pits examined were associated with threading dislocations. All of these dislocations had an a-type burgers vector (i.e., they were edge dislocations, since the line direction is perpendicular to the [ 2 11 ¯ 0 ]-type direction). The pit widths were much wider than the pit depths as measured by atomic force microscopy, indicating the lateral etch rate was much faster than the vertical etch rate. From an Arrhenius plot of the log of the etch rate versus the inverse temperature, the activation energy was approximately 60 kJ/mol. This work demonstrates that DSE is an effective method for locating threading dislocations in hBN and estimating their densities.

  13. Implanted strontium titanate single crystals for energy storage applications

    Energy Technology Data Exchange (ETDEWEB)

    Stoeber, Max; Cherkouk, Charaf; Walter, Juliane; Strohmeyer, Ralph; Leisegang, Tilmann; Meyer, Dirk Carl [TU Bergakademie, Freiberg (Germany); Schelter, Matthias; Zosel, Jens [Kurt Schwabe Institute, Meinsberg (Germany); Prucnal, Slawomir [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (Germany)

    2016-07-01

    A rapid increase of the demand on efficient energy storage solutions requires new approaches beyond the Li-ion technology. In particular, metal-air batteries as well as solid-state fuel cells offer a great potential for high-energy-density storage devices. Since the efficiency of such devices is significantly limited by the activation of both the oxygen reduction reaction (ORR) and the ionic and electronic conductivities, an adequate porosity as well as a controlled doping are required. The ion implantation is a key technology to achieve this goal. In this work, p- and n-doped strontium titanate (SrTiO{sub 3}) single crystals were used as oxidic materials. The oxygen exchange kinetics as well as the structural changes of the SrTiO{sub 3} crystal surface induced by the ion implantation were investigated. On one hand, the depth profile of dopant concentration and dopant valence state were determined using sputtered X-ray photoelectron spectroscopy (XPS). On the other hand, the overall oxygen exchange kinetic of the implanted SrTiO{sub 3} crystal was quantitatively described by means of coulometric titration using Zirox system (ZIROX GmbH, Germany). Furthermore, the surface morphology of the samples was investigated using atomic force microscopy (AFM).

  14. Effect of starting point formation on the crystallization of amorphous silicon films by flash lamp annealing

    Science.gov (United States)

    Sato, Daiki; Ohdaira, Keisuke

    2018-04-01

    We succeed in the crystallization of hydrogenated amorphous silicon (a-Si:H) films by flash lamp annealing (FLA) at a low fluence by intentionally creating starting points for the trigger of explosive crystallization (EC). We confirm that a partly thick a-Si part can induce the crystallization of a-Si films. A periodic wavy structure is observed on the surface of polycrystalline silicon (poly-Si) on and near the thick parts, which is a clear indication of the emergence of EC. Creating partly thick a-Si parts can thus be effective for the control of the starting point of crystallization by FLA and can realize the crystallization of a-Si with high reproducibility. We also compare the effects of creating thick parts at the center and along the edge of the substrates, and a thick part along the edge of the substrates leads to the initiation of crystallization at a lower fluence.

  15. Amorphous Silicon-Germanium Films with Embedded Nano crystals for Thermal Detectors with Very High Sensitivity

    International Nuclear Information System (INIS)

    Calleja, C.; Torres, A.; Rosales-Quintero, P.; Moreno, M.

    2016-01-01

    We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nano crystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (micro bolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9%K -1 ). Our results show that amorphous silicon-germanium films with embedded nano crystals can be used as thermo sensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.

  16. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  17. Synthesis and Single Crystal X-Ray Structure Determination of 3,3',5 ...

    African Journals Online (AJOL)

    Single crystal structure determination at 100 K revealed needle-like crystals in an orthorhombic crystal system. The asymmetric unit of the cell consists of an isolated chloride ion, one half of a tetrahedral [MnCl4]2- anion, a [H2Me4bpz]2+ dication and one half of a molecule of water. Keywords: Crystal Engineering, Hydrogen ...

  18. Temperature dependence of magnetoresistance in copper single crystals

    Science.gov (United States)

    Bian, Q.; Niewczas, M.

    2018-03-01

    Transverse magnetoresistance of copper single crystals has been measured in the orientation of open-orbit from 2 K to 20 K for fields up to 9 T. The experimental Kohler's plots display deviation between individual curves below 16 K and overlap in the range of 16 K-20 K. The violation of the Kohler's rule below 16 K indicates that the magnetotransport can not be described by the classical theory of electron transport on spherical Fermi surface with a single relaxation time. A theoretical model incorporating two energy bands, spherical and cylindrical, with different relaxation times has been developed to describe the magnetoresistance data. The calculations show that the electron-phonon scattering rates at belly and neck regions of the Fermi surface have different temperature dependencies, and in general, they do not follow T3 law. The ratio of the relaxation times in belly and neck regions decreases parabolically with temperature as A - CT2 , with A and C being constants.

  19. Stress and stability of sputter deposited A-15 and bcc crystal structure tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    O' Keefe, M.J.; Stutz, C.E.

    1997-07-01

    Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 thin film stress measurement system. The as-deposited film stress was found to be a function of the sputtering pressure and presputter time; under conditions in which the as-deposited stress of the film was {approximately}1.5 GPa compressive delamination of the W film from the substrate was observed. Data from the thermal studies indicated that bcc film stress was not affected by annealing but transformation of the A-15 structure resulted in a large tensile increase in the stress of the film, regardless of the as-deposited stress of the film. In several instances, complete transformation of the A-15 structure into the bcc phase resulted in {ge}1 GPa tensile increase in film stress.

  20. Stress and stability of sputter deposited A-15 and bcc crystal structure tungsten thin films

    International Nuclear Information System (INIS)

    O'Keefe, M.J.; Stutz, C.E.

    1997-01-01

    Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 thin film stress measurement system. The as-deposited film stress was found to be a function of the sputtering pressure and presputter time; under conditions in which the as-deposited stress of the film was approximately1.5 GPa compressive delamination of the W film from the substrate was observed. Data from the thermal studies indicated that bcc film stress was not affected by annealing but transformation of the A-15 structure resulted in a large tensile increase in the stress of the film, regardless of the as-deposited stress of the film. In several instances, complete transformation of the A-15 structure into the bcc phase resulted in ge1 GPa tensile increase in film stress

  1. Strength and deformation of shocked diamond single crystals: Orientation dependence

    Science.gov (United States)

    Lang, J. M.; Winey, J. M.; Gupta, Y. M.

    2018-03-01

    Understanding and quantifying the strength or elastic limit of diamond single crystals is of considerable scientific and technological importance, and has been a subject of long standing theoretical and experimental interest. To examine the effect of crystalline anisotropy on strength and deformation of shocked diamond single crystals, plate impact experiments were conducted to measure wave profiles at various elastic impact stresses up to ˜120 GPa along [110] and [111] crystal orientations. Using laser interferometry, particle velocity histories and shock velocities in the diamond samples were measured and were compared with similar measurements published previously for shock compression along the [100] direction. Wave profiles for all three orientations showed large elastic wave amplitudes followed by time-dependent inelastic deformation. From the measured wave profiles, the elastic limits were determined under well characterized uniaxial strain loading conditions. The measured elastic wave amplitudes for the [110] and [111] orientations were lower for higher elastic impact stress (stress attained for an elastic diamond response), consistent with the result reported previously for [100] diamond. The maximum resolved shear stress (MRSS) on the {111}⟨110⟩ slip systems was determined for each orientation, revealing significant orientation dependence. The MRSS values for the [100] and [110] orientations (˜33 GPa) are 25%-30% of theoretical estimates; the MRSS value for the [111] orientation is significantly lower (˜23 GPa). Our results demonstrate that the MRSS depends strongly on the stress component normal to the {111} planes or the resolved normal stress (RNS), suggesting that the RNS plays a key role in inhibiting the onset of inelastic deformation. Lower elastic wave amplitudes at higher peak stress and the effect of the RNS are inconsistent with typical dislocation slip mechanisms of inelastic deformation, suggesting instead an inelastic response

  2. Large single-crystal diamond substrates for ionizing radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Girolami, Marco; Bellucci, Alessandro; Calvani, Paolo; Trucchi, Daniele M. [Istituto di Struttura della Materia (ISM), Consiglio Nazionale delle Ricerche (CNR), Sede Secondaria di Montelibretti, Monterotondo Stazione, Roma (Italy)

    2016-10-15

    The need for large active volume detectors for ionizing radiations and particles, with both large area and thickness, is becoming more and more compelling in a wide range of applications, spanning from X-ray dosimetry to neutron spectroscopy. Recently, 8.0 x 8.0 mm{sup 2} wide and 1.2 mm thick single-crystal diamond plates have been put on the market, representing a first step to the fabrication of large area monolithic diamond detectors with optimized charge transport properties, obtainable up to now only with smaller samples. The more-than-double thickness, if compared to standard plates (typically 500 μm thick), demonstrated to be effective in improving the detector response to highly penetrating ionizing radiations, such as γ-rays. Here we report on the first measurements performed on large active volume single-crystal diamond plates, both in the dark and under irradiation with optical wavelengths (190-1100 nm), X-rays, and radioactive γ-emitting sources ({sup 57}Co and {sup 22}Na). (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Ferroelectricity and Piezoelectricity in Free-Standing Polycrystalline Films of Plastic Crystals.

    Science.gov (United States)

    Harada, Jun; Yoneyama, Naho; Yokokura, Seiya; Takahashi, Yukihiro; Miura, Atsushi; Kitamura, Noboru; Inabe, Tamotsu

    2018-01-10

    Plastic crystals represent a unique compound class that is often encountered in molecules with globular structures. The highly symmetric cubic crystal structure of plastic crystals endows these materials with multiaxial ferroelectricity that allows a three-dimensional realignment of the polarization axes of the crystals, which cannot be achieved using conventional molecular ferroelectric crystals with low crystal symmetry. In this work, we focused our attention on malleability as another characteristic feature of plastic crystals. We have synthesized the new plastic/ferroelectric ionic crystals tetramethylammonium tetrachloroferrate(III) and tetramethylammonium bromotrichloroferrate(III), and discovered that free-standing translucent films can be easily prepared by pressing powdered samples of these compounds. The thus obtained polycrystalline films exhibit ferroelectric polarization switching and a relatively large piezoelectric response at room temperature. The ready availability of functional films demonstrates the practical utility of such plastic/ferroelectric crystals, and considering the vast variety of possible constituent cations and anions, a wide range of applications should be expected for these unique and attractive functional materials.

  4. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325 °C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200 μm in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  5. Understanding Nickel Thin Film crystallization using X-Ray ...

    African Journals Online (AJOL)

    The microstructures of these Ni films were studied using X-ray diffractometry technique. The X-ray diffraction (XRD) patterns depicted 100% and 42% relative intensity (RI) peaks identified for normal and helical deposited Ni films but none for the zigzag deposited Ni film. Higher degree of crystallinity of Ni was demonstrated ...

  6. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

  7. Crystallization behavior of Ge-doped eutectic Sb70Te30 films in optical disks

    International Nuclear Information System (INIS)

    Khulbe, Pramod K.; Hurst, Terril; Mansuripur, Masud; Horie, Michikazu

    2002-01-01

    We report laser-induced crystallization behavior of binary Sb-Te and ternary Ge-doped eutectic Sb70Te30 thin film samples in a typical quadrilayer stack as used in phase-change optical disk data storage. Several experiments have been conducted on a two-laser static tester in which one laser operating in pulse mode writes crystalline marks on amorphous film or amorphous marks on crystalline film, while the second laser operating at low-power cw mode simultaneously monitors the progress of the crystalline or amorphous mark formation in real time in terms of the reflectivity variation. The results of this study show that the crystallization kinetics of this class of film is strongly growth dominant, which is significantly different from the crystallization kinetics of stochiometric Ge-Sb-Te compositions. In Sb-Te and Ge-doped eutectic Sb70Te30 thin-film samples, the crystallization behavior of the two forms of amorphous states, namely, as-deposited amorphous state and melt-quenched amorphous state, remains approximately same. We have also presented experiments showing the effect of the variation of the Sb/Te ratio and Ge doping on the crystallization behavior of these films

  8. The ion capturing effect of 5° SiOx alignment films in liquid crystal devices

    Science.gov (United States)

    Huang, Yi; Bos, Philip J.; Bhowmik, Achintya

    2010-09-01

    We show that SiOx, deposited at 5° to the interior surface of a liquid crystal cell allows for a surprisingly substantial reduction in the ion concentration of liquid crystal devices. We have investigated this effect and found that this type of film, due to its surface morphology, captures ions from the liquid crystal material. Ion adsorption on 5° SiOx film obeys the Langmuir isotherm. Experimental results shown allow estimation of the ion capturing capacity of these films to be more than an order of 10 000/μm2. These types of materials are useful for new types of very low power liquid crystal devices such as e-books.

  9. Dichroic dye-dependent studies in guest-host polymer-dispersed liquid crystal films

    Energy Technology Data Exchange (ETDEWEB)

    Malik, Praveen, E-mail: pmalik100@yahoo.co [Department of Physics, Dr. B.R. Ambedkar National Institute of Technology, Jalandhar 144011, Punjab (India); Raina, K.K. [Liquid Crystal Group, Materials Research Laboratory, School of Physics and Materials Science, Thapar University, Patiala 147004, Punjab (India)

    2010-01-01

    Guest-host polymer-dispersed liquid crystal (GHPDLC) films were prepared using a nematic liquid crystal, photo-curable polymer and dichroic dye (anthraquinone blue) by polymerization-induced phase separation (PIPS) technique. Non-ionic dichroic dye (1%, 2% and 4% wt./wt. ratio) was taken as guest in PDLC host. Polarizing microscopy shows that in the absence of electric field, liquid crystal (LC) droplets in polymer matrix mainly exhibit bipolar configuration, however, relatively at higher field, maltese-type crosses were observed. Our results show that approx1% dye-doped PDLC film shows better transmission and faster response times over pure polymer-dispersed nematic liquid crystal (PDNLC) and higher concentrated (2% and 4%) GHPDLC films.

  10. Dichroic dye-dependent studies in guest-host polymer-dispersed liquid crystal films

    International Nuclear Information System (INIS)

    Malik, Praveen; Raina, K.K.

    2010-01-01

    Guest-host polymer-dispersed liquid crystal (GHPDLC) films were prepared using a nematic liquid crystal, photo-curable polymer and dichroic dye (anthraquinone blue) by polymerization-induced phase separation (PIPS) technique. Non-ionic dichroic dye (1%, 2% and 4% wt./wt. ratio) was taken as guest in PDLC host. Polarizing microscopy shows that in the absence of electric field, liquid crystal (LC) droplets in polymer matrix mainly exhibit bipolar configuration, however, relatively at higher field, maltese-type crosses were observed. Our results show that ∼1% dye-doped PDLC film shows better transmission and faster response times over pure polymer-dispersed nematic liquid crystal (PDNLC) and higher concentrated (2% and 4%) GHPDLC films.

  11. Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

    Science.gov (United States)

    Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

    2015-07-01

    Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

  12. Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W; Decker, Ulrich; Rauschenbach, Bernd

    2015-01-01

    Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ∼21% and 3–4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications. (paper)

  13. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    KAUST Repository

    Shi, Dong; Qin, X.; Li, Yuan; He, Yao; Zhong, Cheng; Pan, Jun; Dong, H.; Xu, Wei; Li, T.; Hu, W.; Bredas, Jean-Luc; Bakr, Osman

    2016-01-01

    bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure

  14. Numerical study of slip system activity and crystal lattice rotation under wedge nanoindents in tungsten single crystals

    Science.gov (United States)

    Volz, T.; Schwaiger, R.; Wang, J.; Weygand, S. M.

    2018-05-01

    Tungsten is a promising material for plasma facing components in future nuclear fusion reactors. In the present work, we numerically investigate the deformation behavior of unirradiated tungsten (a body-centered cubic (bcc) single crystal) underneath nanoindents. A finite element (FE) model is presented to simulate wedge indentation. Crystal plasticity finite element (CPFE) simulations were performed for face-centered and body-centered single crystals accounting for the slip system family {110} in the bcc crystal system and the {111} slip family in the fcc system. The 90° wedge indenter was aligned parallel to the [1 ¯01 ]-direction and indented the crystal in the [0 1 ¯0 ]-direction up to a maximum indentation depth of 2 µm. In both, the fcc and bcc single crystals, the activity of slip systems was investigated and compared. Good agreement with the results from former investigations on fcc single crystals was observed. Furthermore, the in-plane lattice rotation in the material underneath an indent was determined and compared for the fcc and bcc single crystals.

  15. Free-standing nanomechanical and nanophotonic structures in single-crystal diamond

    Science.gov (United States)

    Burek, Michael John

    Realizing complex three-dimensional structures in a range of material systems is critical to a variety of emerging nanotechnologies. This is particularly true of nanomechanical and nanophotonic systems, both relying on free-standing small-scale components. In the case of nanomechanics, necessary mechanical degrees of freedom require physically isolated structures, such as suspended beams, cantilevers, and membranes. For nanophotonics, elements like waveguides and photonic crystal cavities rely on light confinement provided by total internal reflection or distributed Bragg reflection, both of which require refractive index contrast between the device and surrounding medium (often air). Such suspended nanostructures are typically fabricated in a heterolayer structure, comprising of device (top) and sacrificial (middle) layers supported by a substrate (bottom), using standard surface nanomachining techniques. A selective, isotropic etch is then used to remove the sacrificial layer, resulting in free-standing devices. While high-quality, crystalline, thin film heterolayer structures are readily available for silicon (as silicon-on-insulator (SOI)) or III-V semiconductors (i.e. GaAs/AlGaAs), there remains an extensive list of materials with attractive electro-optic, piezoelectric, quantum optical, and other properties for which high quality single-crystal thin film heterolayer structures are not available. These include complex metal oxides like lithium niobate (LiNbO3), silicon-based compounds such as silicon carbide (SiC), III-V nitrides including gallium nitride (GaN), and inert single-crystals such as diamond. Diamond is especially attractive for a variety of nanoscale technologies due to its exceptional physical and chemical properties, including high mechanical hardness, stiffness, and thermal conductivity. Optically, it is transparent over a wide wavelength range (from 220 nm to the far infrared), has a high refractive index (n ~ 2.4), and is host to a vast

  16. Electrically continuous graphene from single crystal copper verified by terahertz conductance spectroscopy and micro four-point probe

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due; Pizzocchero, Filippo; Jessen, Bjarke Sørensen

    2014-01-01

    The electrical performance of graphene synthesized by chemical vapor deposition and transferred to insulating surfaces may be compromised by extended defects, including for instance grain boundaries, cracks, wrinkles, and tears. In this study, we experimentally investigate and compare the nano......- and microscale electrical continuity of single layer graphene grown on centimeter-sized single crystal copper with that of previously studied graphene films, grown on commercially available copper foil, after transfer to SiO2 surfaces. The electrical continuity of the graphene films is analyzed using two...... for measurement of the complex conductance response in the frequency range 1-15 terahertz, covering the entire intraband conductance spectrum, and reveals that the conductance response for the graphene grown on single crystalline copper intimately follows the Drude model for a barrier-free conductor. In contrast...

  17. Investigating the crystal growth behavior of biodegradable polymer blend thin films using in situ atomic force microscopy

    CSIR Research Space (South Africa)

    Malwela, T

    2014-01-01

    Full Text Available This article reports the crystal growth behavior of biodegradable polylactide (PLA)/poly[(butylene succinate)-co-adipate] (PBSA) blend thin films using atomic force microscopy (AFM). Currently, polymer thin films have received increased research...

  18. Strain engineering of perovskite thin films using a single substrate

    International Nuclear Information System (INIS)

    Janolin, P-E; Guiblin, N; Dkhil, B; Anokhin, A S; Mukhortov, V M; Golovko, Yu I; Gui, Z; Bellaiche, L; Ravy, S; El Marssi, M; Yuzyuk, Yu I

    2014-01-01

    Combining temperature-dependent x-ray diffraction, Raman spectroscopy and first-principles-based effective Hamiltonian calculations, we show that varying the thickness of (Ba 0.8 Sr 0.2 )TiO 3 (BST) thin films deposited on the same single substrate (namely, MgO) enables us to change not only the magnitude but also the sign of the misfit strain. Such previously overlooked control of the strain allows several properties of these films (e.g. Curie temperature, symmetry of ferroelectric phases, dielectric response) to be tuned and even optimized. Surprisingly, such desired control of the strain (and of the resulting properties) originates from an effect that is commonly believed to be detrimental to functionalities of films, namely the existence of misfit dislocations. The present study therefore provides a novel route to strain engineering, as well as leading us to revisit common beliefs. (fast track communication)

  19. Growth and characterization of nonlinear optical single crystal: Nicotinic L-tartaric

    Energy Technology Data Exchange (ETDEWEB)

    Sheelarani, V.; Shanthi, J., E-mail: shanthinelson@gmail.com [Department of Physics, Avinashilingam Institute for Home Science and Higher Education for Women, Coimbatore-641043 (India)

    2015-06-24

    Nonlinear optical single crystals were grown from Nicotinic and L-Tartaric acid by slow evaporation technique at room temperature. Structure of the grown crystal was confirmed by single crystal X-ray diffraction studies, The crystallinity of the Nicotinic L-Tartaric (NLT) crystals was confirmed from the powder XRD pattern. The transparent range and cut off wavelength of the grown crystal was studied by the UV–Vis spectroscopic analysis.The thermal stability of the crystal was studied by TG-DTA. The second harmonic generation (SHG) efficiency of NLT was confirmed by Kurtz Perry technique.

  20. Ion implantation of CdTe single crystals

    International Nuclear Information System (INIS)

    Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

    2017-01-01

    Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (10"1"7 1/cm"2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  1. Simulations of surface stress effects in nanoscale single crystals

    Science.gov (United States)

    Zadin, V.; Veske, M.; Vigonski, S.; Jansson, V.; Muszinsky, J.; Parviainen, S.; Aabloo, A.; Djurabekova, F.

    2018-04-01

    Onset of vacuum arcing near a metal surface is often associated with nanoscale asperities, which may dynamically appear due to different processes ongoing in the surface and subsurface layers in the presence of high electric fields. Thermally activated processes, as well as plastic deformation caused by tensile stress due to an applied electric field, are usually not accessible by atomistic simulations because of the long time needed for these processes to occur. On the other hand, finite element methods, able to describe the process of plastic deformations in materials at realistic stresses, do not include surface properties. The latter are particularly important for the problems where the surface plays crucial role in the studied process, as for instance, in the case of plastic deformations at a nanovoid. In the current study by means of molecular dynamics (MD) and finite element simulations we analyse the stress distribution in single crystal copper containing a nanovoid buried deep under the surface. We have developed a methodology to incorporate the surface effects into the solid mechanics framework by utilizing elastic properties of crystals, pre-calculated using MD simulations. The method leads to computationally efficient stress calculations and can be easily implemented in commercially available finite element software, making it an attractive analysis tool.

  2. A discrete dislocation dynamics model of creeping single crystals

    Science.gov (United States)

    Rajaguru, M.; Keralavarma, S. M.

    2018-04-01

    Failure by creep is a design limiting issue for metallic materials used in several high temperature applications. Current theoretical models of creep are phenomenological with little connection to the underlying microscopic mechanisms. In this paper, a bottom-up simulation framework based on the discrete dislocation dynamics method is presented for dislocation creep aided by the diffusion of vacancies, known to be the rate controlling mechanism at high temperature and stress levels. The time evolution of the creep strain and the dislocation microstructure in a periodic unit cell of a nominally infinite single crystal is simulated using the kinetic Monte Carlo method, together with approximate constitutive laws formulated for the rates of thermal activation of dislocations over local pinning obstacles. The deformation of the crystal due to dislocation glide between individual thermal activation events is simulated using a standard dislocation dynamics algorithm, extended to account for constant stress periodic boundary conditions. Steady state creep conditions are obtained in the simulations with the predicted creep rates as a function of stress and temperature in good agreement with experimentally reported values. Arrhenius scaling of the creep rates as a function of temperature and power-law scaling with the applied stress are also reproduced, with the values of the power-law exponents in the high stress regime in good agreement with experiments.

  3. Optical properties of tungsten disulfide single crystals doped with gold

    International Nuclear Information System (INIS)

    Dumcenco, D.O.; Hsu, H.P.; Huang, Y.S.; Liang, C.H.; Tiong, K.K.; Du, C.H.

    2008-01-01

    Single crystals of WS 2 doped with gold have been grown by the chemical vapour transport method using iodine as a transporting agent. X-ray diffraction (XRD) pattern analysis revealed presence of mixed three-layer rhombohedral (3R) and two-layer hexagonal (2H) polytypes for the doped crystals while the undoped one shows only 2H form. Hall measurements indicate that the samples are p-type in nature. The doping effects of the materials are characterized by surface photovoltage (SPV), photoconductivity (PC) and piezoreflectance (PzR) measurements. Room temperature SPV and PC spectra reveal a feature located at ∼60 meV below the A exciton and has been tentatively assigned to be an impurity level caused by Au dopant. Excitonic transition energies of the A, B, d and C excitons detected in PzR spectra show red shift due to the presence of a small amount of Au and the broadening parameters of the excitonic transition features increase due to impurity scattering. The values of the parameters that describe the electron (exciton)-phonon interaction of excitonic transitions of A-B are about two times larger than that of d-C excitonic pairs. The possible assignments of the different origins of A-B and d-C excitonic pairs have been discussed

  4. Influence of crystal phases on electro-optic properties of epitaxially grown lanthanum-modified lead zirconate titanate films

    Science.gov (United States)

    Masuda, Shin; Seki, Atsushi; Masuda, Yoichiro

    2010-02-01

    We describe here how we have improved the crystal qualities and controlled the crystal phase of the lanthanum-modified lead zirconate titanate (PLZT) film without changing the composition ratio using an oxygen-pressure crystallization process. A PLZT film deposited on a SrTiO3 substrate with the largest electro-optic (EO) coefficient of 498 pm/V has been achieved by controlling the crystal phase of the film. Additionally, a fatigue-free lead zirconate titanate (PZT) capacitor with platinum electrodes has been realized by reducing the oxygen vacancies in the films.

  5. IPNS time-of-flight single crystal diffractometer

    International Nuclear Information System (INIS)

    Schultz, A.J.; Teller, R.G.; Williams, J.M.

    1983-01-01

    The single crystal diffractometer (SCD) at the Argonne Intense Pulsed Neutron Source (IPNS) utilizes the time-of-flight (TOF) Laue technique to provide a three-dimensional sampling of reciprocal space during each pulse. The instrument contains a unique neutron position-sensitive 6 Li-glass scintillation detector with an active area of 30 x 30 cm. The three-dimensional nature of the data is very useful for fast, efficient measurement of Bragg intensities and for the studies of superlattice and diffuse scattering. The instrument was designed to achieve a resolution of 2% or better (R = δQ/Q) with 2 THETA > 60 0 and lambda > 0.7A

  6. Superconductivity in SrNi2P2 single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ronning, Filip [Los Alamos National Laboratory; Bauer, Eric D [Los Alamos National Laboratory; Park, Tuscon [Los Alamos National Laboratory; Thompson, Joe D [Los Alamos National Laboratory

    2009-01-01

    Heat capacity, magnetic susceptibility, and resistivity of SrNi{sub 2}P{sub 2} single crystals are presented, illustrating the structural transition at 325 K, and bulk superconductivity at 1.4 K. The magnitude of {Tc}, fits to the heat capacity data, the small upper critical field H{sub c2} = 390 Oe, and {kappa} = 2.1 suggests a conventional fully gapped superconductor. With applied pressure we find that superconductivity persists into the so-called 'collapsed tetragonal' phase, although the transition temperature is monotonically suppressed with increasing pressure. This argues that reduced dimensionality can be a mechanism for increasing the transition temperatures of layered NiP, as well as layered FeAs and NiAs, superconductors.

  7. Quantum nernst effect in a bismuth single crystal

    International Nuclear Information System (INIS)

    Matsuo, M.; Endo, A.; Hatano, N.; Nakamura, H.; Shirasaki, R.; Sugihara, K.

    2009-07-01

    We calculate the phonon-drag contribution to the transverse (Nernst) thermoelectric power S yx in a bismuth single crystal subjected to a quantizing magnetic field. The calculated heights of the Nernst peaks originating from the hole Landau levels and their temperature dependence reproduce the right order of magnitude for those of the pronounced magneto-oscillations recently reported by Behnia et al. A striking experimental finding that S yx is much larger than the longitudinal (Seebeck) thermoelectric power S xx can be naturally explained as the effect of the phonon drag, combined with the well-known relation between the longitudinal and the Hall resistivity ρ xx >> |ρ yx | in a semi-metal bismuth. The calculation that includes the contribution of both holes and electrons suggests that some of the hitherto unexplained minor peaks located roughly at the fractional filling of the hole Landau levels are attributable to the electron Landau levels. (author)

  8. Shock compression experiments on Lithium Deuteride single crystals.

    Energy Technology Data Exchange (ETDEWEB)

    Knudson, Marcus D.; Desjarlais, Michael Paul; Lemke, Raymond W.

    2014-10-01

    S hock compression exper iments in the few hundred GPa (multi - Mabr) regime were performed on Lithium Deuteride (LiD) single crystals . This study utilized the high velocity flyer plate capability of the Sandia Z Machine to perform impact experiments at flyer plate velocities in the range of 17 - 32 km/s. Measurements included pressure, density, and temperature between %7E200 - 600 GPa along the Principal Hugoniot - the locus of end states achievable through compression by large amplitude shock waves - as well as pressure and density of re - shock states up to %7E900 GPa . The experimental measurements are compared with recent density functional theory calculations as well as a new tabular equation of state developed at Los Alamos National Labs.

  9. White beam synchrotron fractography of molybdenum and niobium single crystals

    International Nuclear Information System (INIS)

    Bilello, J.C.; Hmelo, A.B.

    1983-01-01

    It has been demonstrated that a White Beam Synchrotron reflection technique can be used to characterize the fracture surface of Mo and Nb single crystals. This technique when used in conjunction with Berg-Barrett (or in the future monochromatic synchrotron topography) gives detailed information which correlates the internal defect structure to the cleavage surface morphology. In particular, synchrotron fractography has revealed the full extent of the plastic zone associated with a precursor crack, has clearly identified the nature of the initial crack where more than one precursor could have existed, and give detailed information on the extent of twinning and microtwinning. In comparison with other fractography methods for such semi-brittle metals the White Beam Synchrotron method not only achieves rapid data collection, but also provides internal defect structure correlation non-destructively. (author)

  10. Trapped electrons in irradiated single crystals of polyhydroxy compounds

    International Nuclear Information System (INIS)

    Box, H.C.; Budzinski, E.E.; Freund, H.G.; Potter, W.R.

    1979-01-01

    The intermolecular trapping of electrons has been observed in single crystals of dulcitol and L(+) arabinose x-irradiated at 4.2 0 K. Attribution of a major component of the ESR absorption to trapped electrons is based upon the character of the hyperfine pattern, which arises from multiple anisotropic hyperfine interactions with exchangeable protons, and on the g value of the absorption, which is always less than the free spin value. The removal of the trapped electron absorption upon irradiation with visible light has also been demonstrated. In these experiments all of the electrons are trapped in identical sites. This circumstance provides some important advantages in the study of the factors affecting the stabilization of charge in an environment of polarizable molecules

  11. Growth of single-crystal YAG fiber optics.

    Science.gov (United States)

    Nie, Craig D; Bera, Subhabrata; Harrington, James A

    2016-07-11

    Single-crystal YAG (Y3Al5O12) fibers have been grown by the laser heated pedestal growth technique with losses as low as 0.3 dB/m at 1.06 μm. These YAG fibers are as long as about 60 cm with diameters around 330 μm. The early fibers were grown from unoriented YAG seed fibers and these fibers exhibited facet steps or ridges on the surface of the fiber. However, recently we have grown fibers using an oriented seed to grow step-free fibers. Scattering losses made on the fibers indicate that the scattering losses are equal to about 30% of the total loss.

  12. Platinum single crystal electrodes for the electrocatalysis of methane oxidation

    Directory of Open Access Journals (Sweden)

    Mayara Munaretto

    2011-03-01

    Full Text Available The main objective of this paper is to characterize the voltammetric profiles of platinum single crystals of low Miller indexes Pt(100 and Pt(110 and study their catalytic activities on the oxidation of methane. In this way, it was developed a metallic surface modified by presence of other metal oxide, which presents catalytic activity for this reaction. It is well known that the electrooxidation of methane (CH4 leads mainly to the formation of CO2 and H2O, however, the oxidation can also lead to the formation of CO, a reaction intermediate that has strong interaction with metal surfaces, such as platinum. This molecule tends to accumulate on the platinum surface and to passive it, due to the self-poisoning, decreasing its catalytic activity. Therefore, the main aim of this work was the development of a platinum electrode modified by deposition of titanium oxide, which presented electrocatalytic properties for the oxidation of methane.

  13. Phonon interactions with methyl radicals in single crystals

    Directory of Open Access Journals (Sweden)

    James W. Wells

    2017-04-01

    Full Text Available The high temperature ESR spectra’s anomalous appearance at very low temperatures for the methyl radical created in single crystals is explained by magnetic dipole interactions with neighboring protons. These protons acting via phonon vibrations induce resonant oscillations with the methyl group to establish a very temperature sensitive ‘‘relaxation’’ mode that allows the higher energy ‘‘E’’ state electrons with spin 12 to ‘‘decay’’ into ‘‘A’’ spin 12 states. Because of the amplitude amplification with temperature, the ‘‘E’’ state population is depleted and the ‘‘A’’ state population augmented to produce the high temperature ESR spectrum. This phenomenon is found to be valid for all but the very highest barriers to methyl group tunneling. In support, a time dependent spin population study shows this temperature evolution in the state populations under this perturbation.

  14. Angular correlation of annihilation photons in ice single crystals

    DEFF Research Database (Denmark)

    Mogensen, O. E.; Kvajic, G.; Eldrup, Morten Mostgaard

    1971-01-01

    -lattice vectors g⃗ on the direction perpendicular to the slits and the sample surface. The relative area of the central plus the side peaks was (15.2 ± 0.4)% for all curves. All the peaks are interpreted as due to parapositronium annihilation. The side peaks are explained as evidence for the positronium center......Linear-slit angular-correlation curves were obtained at - 148 °C for the [0001], [10¯10], and [11¯20] directions in single crystals of ice. Besides the narrow central peak, pronounced narrow side peaks were also observed. They occurred at angles θ=2πℏgz/mc, where gz is the projection of reciprocal...

  15. Effect of neutron irradiation on single crystal V3Si

    International Nuclear Information System (INIS)

    Viswanathan, R.; Caton, R.; Cox, D.E.; Guha, A.; Sarachik, M.P.; Smith, F.W.; Testardi, L.R.

    1977-01-01

    We We have investigated the effect of successive neutron irradiation up to a fluence of approximately 2 x 10 19 n/cm 2 , by measurements of heat capacity, susceptibility, resistivity, acoustic velocity and neutron diffraction in a single crystal V 3 Si. We find that for low level doses (phi t greater than or equal to 3.5 x 10 18 n/cm 2 ) (a) the structural transformation is very sensitive, whereas the suerconducting transition temperature, T/sub c/, is hardly affected, and (b) except for low temperature heat capacity, most of the other measurements show very little change. For the highest fluence of 2 x 10 19 n/cm 2 used to date, the T/sub c/ dropped to 7.5 K with large changes in the linear heat capacity coefficient, magnetic susceptibility and sound velocity. These results are discussed briefly in this paper

  16. Neutron radiation damage in NbO single crystals

    International Nuclear Information System (INIS)

    Onozuka, T.; Koiwa, M.; Ishikawa, Y.; Yamaguchi, S.; Hirabayashi, M.

    1977-01-01

    The effect of neutron irradiation and subsequent recovery has been studied for Nb0 single crystals of a defective NaCl structure containing 25% vacancies of niobium and oxygen. A very large increase (about 1%) in the lattice constant is observed after irradiation of 1.5 x 10 19 and 1 x 10 20 nvt (> 1 MeV). From the intensity measurements of x-ray and neutron diffraction, it is revealed that the knock-on atoms fill preferentially their respective vacant sites; Nb atoms occupy Nb-vacancies, and 0 atoms occupy 0-vacancies with nearly the same probabilities; 0.53 for 1.5 x 10 19 nvt. The mean threshold energy for displacement is estimated to be about 3 eV. (author)

  17. Diffusion of Ti in α-Zr single crystals

    International Nuclear Information System (INIS)

    Hood, G.M.; Zou, H.; Schultz, R.J.; Jackman, J.A.

    1994-11-01

    Ti diffusion coefficients (D) have been measured in nominally pure αZr single crystals (773-1124 K) in directions both parallel (D pa ) and perpendicular (D pe , few data) to the c-axis: tracer techniques and secondary ion mass spectrometry were used to determine the diffusion profiles. The results show a temperature dependence which suggests two regions of diffusion behaviour. Above 1035 K, region I, diffusion conforms to the expectations of intrinsic behaviour with normal Arrhenius law constants: D pa = 1.7 x 10 -3 exp(-2.93 ± 0.08 eV/kΤ) m 2 /s. Below 1035 K, region II, D's are enhanced with respect to an extrapolation of region I behaviour. The region II data are associated with extrinsic effects. (author). 13 refs., 1 tab., 3 figs

  18. Fishtail effect in twinned and detwinned YBCO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Boudissa, M. [Universite Ferhat Abbas, Faculte des Sciences de l' Ingenieur, Setif (Algeria); Halimi, R. [Universite Mentouri, Unite de Recherche de Physique des Materiaux, Constantine (Algeria); Frikach, K.; Senoussi, S. [Universite Paris-Sud, Laboratoire de Physique des Solides, Orsay (France)

    2006-09-15

    We have studied the magnetization hysteresis loops of a twinned and detwinned single crystals in a temperature range between 4.2 and 100 K and a magnetic field (H) range between 0 and 6 T. We carried out relaxation measurements on the samples at different temperatures and magnetic fields. We investigated the twin pinning as a function of temperature (T) and the fishtail anomaly in the critical current density of the two samples. We tried in this study to confirm or infirm the different models which explain the fishtail effect by confronting them to our experimental results We found that the collective creep theory is consistent with the results of our experiment in the field region where the magnetization is at its minimum. This field marks a crossover between the small and large bundle pinning regimes. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Fishtail effect in twinned and detwinned YBCO single crystals

    International Nuclear Information System (INIS)

    Boudissa, M.; Halimi, R.; Frikach, K.; Senoussi, S.

    2006-01-01

    We have studied the magnetization hysteresis loops of a twinned and detwinned single crystals in a temperature range between 4.2 and 100 K and a magnetic field (H) range between 0 and 6 T. We carried out relaxation measurements on the samples at different temperatures and magnetic fields. We investigated the twin pinning as a function of temperature (T) and the fishtail anomaly in the critical current density of the two samples. We tried in this study to confirm or infirm the different models which explain the fishtail effect by confronting them to our experimental results We found that the collective creep theory is consistent with the results of our experiment in the field region where the magnetization is at its minimum. This field marks a crossover between the small and large bundle pinning regimes. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Optical absorption in gel grown cadmium tartrate single crystals

    International Nuclear Information System (INIS)

    Arora, S K; Kothari, A J; Patel, R G; Chauha, K M; Chudasama, B N

    2006-01-01

    Single crystals of cadmium tartrate pentahydrate (CTP) have been grown by the famous gel technique. The slow and controlled reaction between Cd 2+ and (C 4 H 4 O 6 ) 2- ions in silica hydrogel results in formation of the insoluble product, CdC 4 H 4 O 6 .5H 2 O. Optical absorption spectra have been recorded in the range 200 to 2500 nm. Fundamental absorption edge for electronic transition has been analyzed. The direct allowed transition is found to be present in the region of relatively higher photon energy. Analysis of the segments of α 1/2 versus hν graph has been made to separate individual contribution of phonons. The phonons involved in the indirect transition are found to correspond to 335 and 420 cm -1 . Scattering of charge carriers in the lattice is found due to acoustic phonons

  1. Radiation damage mechanisms in single crystals of creatine monohydrate

    International Nuclear Information System (INIS)

    Wells, J.W.; Ko, C.

    1978-01-01

    ENDOR spectroscopy is utilized to define the temperature dependent sequence of molecular fragmentation processes occuring in x-irradiated single crystals of creatine monohydrate. Two conformations of the primary reduction product =OOC--C(H 2 ) --N(CH) 3 --C(NH 2 ) 2 + are found to undergo a series of subtle changes before deamination. The resultant radical -OOC--CH 2 then induces hydrogen abstraction to form a final room temperature product - OOC--CH--N(CH 3 ) --C(NH 2 ) + . An unknown initial oxidation species is found to decarboxylate forming the radical H 2 C--N(CH 3 ) --C(NH 2 ) 2 + which, although similar to the deamination product, exists at room temperature. The stability of this species is attributed to a delocalization of spin indicated by calculation and measurement

  2. X-ray conductivity of ZnSe single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Degoda, V. Ya., E-mail: degoda@univ.kiev.ua; Podust, G. P. [Taras Shevchenko Kyiv National University, Physics Department (Ukraine)

    2016-05-15

    The experimental I–V and current–illuminance characteristics of the X-ray conductivity and X-ray luminescence of zinc-selenide single crystals feature a nonlinear shape. The performed theoretical analysis of the kinetics of the X-ray conductivity shows that even with the presence of shallow and deep traps for free charge carriers in a semiconductor sample, the integral characteristics of the X-ray conductivity (the current–illuminance and I–V dependences) should be linear. It is possible to assume that the nonlinearity experimentally obtained in the I–V and current–illuminance characteristics can be caused by features of the generation of free charge carriers upon X-ray irradiation, i.e., the generation of hundreds of thousands of free charge carriers of opposite sign in a local region with a diameter of <1 μm and Coulomb interaction between the free charge carriers of opposite signs.

  3. The characterization of tungsten disulfide single crystals doped with gold

    International Nuclear Information System (INIS)

    Dumcenco, D.O.; Huang, Y.S.; Tiong, K.K.; Liang, C.H.; Chen, C.H.

    2007-01-01

    Single crystals of WS 2 doped with gold (WS 2 :Au) have been grown by the chemical vapour transport method using iodine as a transporting agent. Hall measurements indicate that the samples are p-type in nature. The doping effect of the materials are characterized by conductivity, surface photovoltage and piezo reflectance measurements. The higher conductivity respect to that of the undoped one suggests that more charge carriers are available for conduction in the doped compound. The surface photovoltage spectrum reveals an impurity level located below the A exciton. The direct band-edge excitonic transition energies for WS 2 :Au show redshifts and the broadening parameters of the excitonic transition features increase due to impurity scattering. (authors)

  4. Comprehensive studies on irradiated single-crystal diamond sensors

    Energy Technology Data Exchange (ETDEWEB)

    Stegler, Martin [DESY, Zeuthen (Germany)

    2015-07-01

    Single-crystal diamond sensors are used as part of the Beam and Radiation Instrumentation and Luminosity (BRIL) projects of the CMS experiment. Due to an upgrade of the Fast Beam Conditions Monitor (BCM1F) these diamond sensors are exchanged and the irradiated ones are now used for comprehensive studies. Current over voltage (IV), current over time (CT) and charge collection efficiency (CCE) measurements were performed for a better understanding of the radiation damage incurred during operation and to compensate in the future. The effect of illumination with various light sources on the charge collection efficiency was investigated and led to interesting results. Intensity and wavelength of the light were varied for deeper insight of polarization effects.

  5. Photoinduced surface voltage mapping study for large perovskite single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiaojing; Liu, Yucheng; Gao, Fei; Yang, Zhou [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Liu, Shengzhong, E-mail: liusz@snnu.edu.cn [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Dalian Institute of Chemical Physics, iChEM, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian 116023 (China)

    2016-05-02

    Using a series of illumination sources, including white light (tungsten-halogen lamp), 445-nm, 532-nm, 635-nm, and 730-nm lasers, the surface photovoltage (SPV) images were mapped for centimeter-sized CH{sub 3}NH{sub 3}PbX{sub 3} (X = Cl, Br, I) perovskite single crystals using Kelvin probe force microscopy. The significant SPV signals were observed to be wavelength-dependent. We attribute the appreciable SPV to the built-in electric field in the space charge region. This study shines light into the understanding of photoinduced charge generation and separation processes at nanoscale to help advance the development of perovskite solar cells, optoelectronics, laser, photodetector, and light-emitting diode (LED).

  6. Crystal structure and phase composition of aluminium thin films with holmium additions

    International Nuclear Information System (INIS)

    Koleshko, V.M.; Belitskij, V.F.; Obukhov, V.E.; Rumak, N.V.; Urban, T.P.

    1984-01-01

    The effect of holmium additions on the crystal structure and phase composition of thin aluminium films has been studied. A regularity in grain size changes in aluminium thin films versus the holmium content in them is established. The holmium introduction is shown to result in the appearance of axial texture in the aluminium films, the texture axis being determined by the quantity of the addition. During heat treatment of the aluminium films, containing holmium additions, in the range of low ( approximately 100-200 deg C) annealing temperatures holmium monohydroxide is formed, and at annealing temperatures 300 deg C 0 3 is formed

  7. Growth and microtopographic study of CuInSe{sub 2} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Sanjaysinh M.; Chaki, Sunil, E-mail: sunilchaki@yahoo.co.in; Deshpande, M. P. [Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat - 388120 (India); Tailor, J. P. [Applied Physics Department, S.V.N.I.T., Surat, Gujarat - 395007 (India)

    2016-05-23

    The CuInSe{sub 2} single crystals were grown by chemical vapour transport (CVT) technique using iodine as transporting agent. The elemental composition of the as-grown CuInSe{sub 2} single crystals was determined by energy dispersive analysis of X-ray (EDAX). The unit cell crystal structure and lattice parameters were determined by X-ray diffraction (XRD) technique. The surface microtopographic study of the as-grown CuInSe{sub 2} single crystals surfaces were done to study the defects, growth mechanism, etc. of the CVT grown crystals.

  8. Isothermal equation of state of a lithium fluoride single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Kim, K.Y.

    1975-01-01

    An isothermal equation of state of a LiF single crystal was determined from length change measurements of the specimen as a function of hydrostatic pressure up to approximately 7 kbars at 28 to 41/sup 0/C. The length change was measured with an accuracy of approximately 500 A by using a Fabry Perot type He--Ne laser interferometer for a 1-m long specimen at temperatures constant to less than 0.002/sup 0/C. Several two- and three-parameter equations of state were used in analyzing the measured pressure-volume data. The computer fit for each equation of state determines not only the value of its parameters but also the standard deviations associated with them and one dependent variable, either pressure or volume. With the parameters determined, the equations of state are extrapolated to approximately 5 megabars in order to see discrepancies. Using the Born model of ionic solids, two equations of state were derived both from a power law potential and from an exponential form for the repulsive energy of alkali metal halides and used to fit the pressure-volume data of a LiF single crystal. They are also extrapolated to approximately 5 megabars. The Birch's two-parameter equation and the Grover, Getting, and Kennedy equation are indistinguishable from the two equations of state derived from the Born model for pressures approximately equal to or less than 800 kbars within +-20 kbars. The above four equations of state also fit closely the Pagannone and Drickamer static compression data, the Christian shock wave data, and the Kormer et al. shock wave data. The isothermal bulk modulus and its first pressure derivative at atmospheric pressure and 28.83/sup 0/C are 664.5 +- 0.5 kbars and 5.40 +- 0.18, respectively, in close agreement with those values ultrasonically measured by R. A. Miller and C. S. Smith. (auth)

  9. A discrete dislocation–transformation model for austenitic single crystals

    International Nuclear Information System (INIS)

    Shi, J; Turteltaub, S; Remmers, J J C; Van der Giessen, E

    2008-01-01

    A discrete model for analyzing the interaction between plastic flow and martensitic phase transformations is developed. The model is intended for simulating the microstructure evolution in a single crystal of austenite that transforms non-homogeneously into martensite. The plastic flow in the untransformed austenite is simulated using a plane-strain discrete dislocation model. The phase transformation is modeled via the nucleation and growth of discrete martensitic regions embedded in the austenitic single crystal. At each instant during loading, the coupled elasto-plasto-transformation problem is solved using the superposition of analytical solutions for the discrete dislocations and discrete transformation regions embedded in an infinite homogeneous medium and the numerical solution of a complementary problem used to enforce the actual boundary conditions and the heterogeneities in the medium. In order to describe the nucleation and growth of martensitic regions, a nucleation criterion and a kinetic law suitable for discrete regions are specified. The constitutive rules used in discrete dislocation simulations are supplemented with additional evolution rules to account for the phase transformation. To illustrate the basic features of the model, simulations of specimens under plane-strain uniaxial extension and contraction are analyzed. The simulations indicate that plastic flow reduces the average stress at which transformation begins, but it also reduces the transformation rate when compared with benchmark simulations without plasticity. Furthermore, due to local stress fluctuations caused by dislocations, martensitic systems can be activated even though transformation would not appear to be favorable based on the average stress. Conversely, the simulations indicate that the plastic hardening behavior is influenced by the reduction in the effective austenitic grain size due to the evolution of transformation. During cyclic simulations, the coupled plasticity

  10. Third order nonlinear optical properties of a paratellurite single crystal

    Science.gov (United States)

    Duclère, J.-R.; Hayakawa, T.; Roginskii, E. M.; Smirnov, M. B.; Mirgorodsky, A.; Couderc, V.; Masson, O.; Colas, M.; Noguera, O.; Rodriguez, V.; Thomas, P.

    2018-05-01

    The (a,b) plane angular dependence of the third-order nonlinear optical susceptibility, χ(3) , of a c-cut paratellurite (α-TeO2) single crystal was quantitatively evaluated here by the Z-scan technique, using a Ti:sapphire femtosecond laser operated at 800 nm. In particular, the mean value Re( ⟨χ(3)⟩a,b )(α-TeO2) of the optical tensor has been extracted from such experiments via a direct comparison with the data collected for a fused silica reference glass plate. A R e (⟨χ(3)⟩(a,b )(α-TeO2)):R e (χ(3))(SiO2 glass) ratio roughly equal to 49.1 is found, and our result compares thus very favourably with the unique experimental value (a ratio of ˜50) reported by Kim et al. [J. Am. Ceram. Soc. 76, 2486 (1993)] for a pure TeO2 glass. In addition, it is shown that the angular dependence of the phase modulation within the (a,b) plane can be fully understood in the light of the strong dextro-rotatory power known for TeO2 materials. Taking into account the optical activity, some analytical model serving to estimate the diagonal and non-diagonal components of the third order nonlinear susceptibility tensor has been thus developed. Finally, Re( χxxxx(3) ) and Re( χxxyy(3) ) values of 95.1 ×10-22 m 2/V2 and 42.0 ×10-22 m2/V2 , respectively, are then deduced for a paratellurite single crystal, considering fused silica as a reference.

  11. Effect of a Polymercaptan Material on the Electro-Optical Properties of Polymer-Dispersed Liquid Crystal Films

    OpenAIRE

    Yujian Sun; Cuihong Zhang; Le Zhou; Hua Fang; Jianhua Huang; Haipeng Ma; Yi Zhang; Jie Yang; Lan-Ying Zhang; Ping Song; Yanzi Gao; Jiumei Xiao; Fasheng Li; Kexuan Li

    2016-01-01

    Polymer-dispersed liquid crystal (PDLC) films were prepared by the ultraviolet-light-induced polymerization of photopolymerizable monomers in nematic liquid crystal/chiral dopant/thiol-acrylate reaction monomer composites. The effects of the chiral dopant and crosslinking agents on the electro-optical properties of the PDLC films were systematically investigate. While added the chiral dopant S811 into the PDLC films, the initial off-state transmittance of the films was decreased. It was found...

  12. Bulk crystal growth and their effective third order nonlinear optical properties of 2-(4-fluorobenzylidene) malononitrile (FBM) single crystal

    Science.gov (United States)

    Priyadharshini, A.; Kalainathan, S.

    2018-04-01

    2-(4-fluorobenzylidene) malononitrile (FBM), an organic third order nonlinear (TONLO) single crystal with the dimensions of 32 × 7 × 11 mm3, has been successfully grown in acetone solution by slow evaporation technique at 35 °C. The crystal system (triclinic), space group (P-1) and crystalline purity of the titular crystal were measured by single crystal and powder X-ray diffraction, respectively. The molecular weight and the multiple functional groups of the FBM material were confirmed through the mass and FT-IR spectral analysis. UV-Vis-NIR spectral study enroles that the FBM crystal exhibits excellent transparency (83%) in the entire visible and near infra-red region with a wide bandgap 2.90 eV. The low dielectric constant (εr) value of FBM crystal is appreciable for microelectronics industry applications. Thermal stability and melting point (130.09 °C) were ascertained by TGA-DSC analysis. The laser-induced surface damage threshold (LDT) value of FBM specimen is found to be 2.14 GW/cm2, it is fairly good compared to other reported NLO crystals. The third - order nonlinear optical character of the FBM crystal was confirmed through the typical single beam Z-scan technique. All these finding authorized that the organic crystal of FBM is favorably suitable for NLO applications.

  13. A dislocation-based crystal plasticity framework for dynamic ductile failure of single crystals

    Science.gov (United States)

    Nguyen, Thao; Luscher, D. J.; Wilkerson, J. W.

    2017-11-01

    A framework for dislocation-based viscoplasticity and dynamic ductile failure has been developed to model high strain rate deformation and damage in single crystals. The rate-dependence of the crystal plasticity formulation is based on the physics of relativistic dislocation kinetics suited for extremely high strain rates. The damage evolution is based on the dynamics of void growth, which are governed by both micro-inertia as well as dislocation kinetics and dislocation substructure evolution. An averaging scheme is proposed in order to approximate the evolution of the dislocation substructure in both the macroscale as well as its spatial distribution at the microscale. Additionally, a concept of a single equivalent dislocation density that effectively captures the collective influence of dislocation density on all active slip systems is proposed here. Together, these concepts and approximations enable the use of semi-analytic solutions for void growth dynamics developed in (Wilkerson and Ramesh, 2014), which greatly reduce the computational overhead that would otherwise be required. The resulting homogenized framework has been implemented into a commercially available finite element package, and a validation study against a suite of direct numerical simulations was carried out.

  14. Pure crystal orientation and anisotropic charge transport in large-area hybrid perovskite films

    KAUST Repository

    Cho, Nam Chul

    2016-11-10

    Controlling crystal orientations and macroscopic morphology is vital to develop the electronic properties of hybrid perovskites. Here we show that a large-area, orientationally pure crystalline (OPC) methylammonium lead iodide (MAPbI3) hybrid perovskite film can be fabricated using a thermal-gradient-assisted directional crystallization method that relies on the sharp liquid-to-solid transition of MAPbI3 from ionic liquid solution. We find that the OPC films spontaneously form periodic microarrays that are distinguishable from general polycrystalline perovskite materials in terms of their crystal orientation, film morphology and electronic properties. X-ray diffraction patterns reveal that the film is strongly oriented in the (112) and (200) planes parallel to the substrate. This film is structurally confined by directional crystal growth, inducing intense anisotropy in charge transport. In addition, the low trap-state density (7.9 × 1013 cm−3) leads to strong amplified stimulated emission. This ability to control crystal orientation and morphology could be widely adopted in optoelectronic devices.

  15. Temperature dependent evolution of wrinkled single-crystal silicon ribbons on shape memory polymers.

    Science.gov (United States)

    Wang, Yu; Yu, Kai; Qi, H Jerry; Xiao, Jianliang

    2017-10-25

    Shape memory polymers (SMPs) can remember two or more distinct shapes, and thus can have a lot of potential applications. This paper presents combined experimental and theoretical studies on the wrinkling of single-crystal Si ribbons on SMPs and the temperature dependent evolution. Using the shape memory effect of heat responsive SMPs, this study provides a method to build wavy forms of single-crystal silicon thin films on top of SMP substrates. Silicon ribbons obtained from a Si-on-insulator (SOI) wafer are released and transferred onto the surface of programmed SMPs. Then such bilayer systems are recovered at different temperatures, yielding well-defined, wavy profiles of Si ribbons. The wavy profiles are shown to evolve with time, and the evolution behavior strongly depends on the recovery temperature. At relatively low recovery temperatures, both wrinkle wavelength and amplitude increase with time as evolution progresses. Finite element analysis (FEA) accounting for the thermomechanical behavior of SMPs is conducted to study the wrinkling of Si ribbons on SMPs, which shows good agreement with experiment. Merging of wrinkles is observed in FEA, which could explain the increase of wrinkle wavelength observed in the experiment. This study can have important implications for smart stretchable electronics, wrinkling mechanics, stimuli-responsive surface engineering, and advanced manufacturing.

  16. Synthesis, crystal growth, optical, thermal, and mechanical properties of a nonlinear optical single crystal: ammonium sulfate hydrogen sulphamate (ASHS)

    Science.gov (United States)

    Sudhakar, K.; Nandhini, S.; Muniyappan, S.; Arumanayagam, T.; Vivek, P.; Murugakoothan, P.

    2018-04-01

    Ammonium sulfate hydrogen sulphamate (ASHS), an inorganic nonlinear optical crystal, was grown from the aqueous solution by slow evaporation solution growth technique. The single-crystal XRD confirms that the grown single crystal belongs to the orthorhombic system with the space group of Pna21. Powder XRD confirms the crystalline nature and the diffraction planes were indexed. Crystalline perfection of grown crystal was analysed by high-resolution X-ray diffraction rocking curve technique. UV-Vis-NIR studies revealed that ASHS crystal has optical transparency 65% and lower cut-off wavelength at 218 nm. The violet light emission of the crystal was identified by photoluminescence studies. The particle size-dependent second-harmonic generation efficiency for ASHS crystal was evaluated by Kurtz-Perry powder technique using Nd:YAG laser which established the existence of phase matching. Surface laser damage threshold value was evaluated using Nd:YAG laser. Optical homogeneity of the crystal was evaluated using modified channel spectrum method through birefringence study. Thermal analysis reveals that ASHS crystal is stable up to 213 °C. The mechanical behaviour of the ASHS crystal was analysed using Vickers microhardness study.

  17. Thin film polarizer and color filter based on photo-polymerizable nematic liquid crystal

    Science.gov (United States)

    Mohammadimasoudi, Mohammad; Neyts, Kristiaan; Beeckman, Jeroen

    2015-03-01

    We present a method to fabricate a thin film color filter based on a mixture of photo-polymerizable liquid crystal and chiral dopant. A chiral nematic liquid crystal layer reflects light for a certain wavelength interval Δλ (= Δn.P) with the period and Δn the birefringence of the liquid crystal. The reflection band is determined by the chiral dopant concentration. The bandwidth is limited to 80nm and the reflectance is at most 50% for unpolarized incident light. The thin color filter is interesting for innovative applications like polarizer-free reflective displays, polarization-independent devices, stealth technologies, or smart switchable reflective windows to control solar light and heat. The reflected light has strong color saturation without absorption because of the sharp band edges. A thin film polarizer is developed by using a mixture of photo-polymerizable liquid crystal and color-neutral dye. The fabricated thin film absorbs light that is polarized parallel to the c axis of the LC. The obtained polarization ratio is 80% for a film of only 12 μm. The thin film polarizer and the color filter feature excellent film characteristics without domains and can be detached from the substrate which is useful for e.g. flexible substrates.

  18. Structure of cleaved (001) USb2 single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shao-ping [Los Alamos National Laboratory; Hawley, Marilyn [Los Alamos National Laboratory; Bauer, Eric D [Los Alamos National Laboratory; Stockum, Phil B [STANFORD UNIV.; Manoharan, Hari C [STANFORD UNIV

    2009-01-01

    We have achieved what we believe to be the first atomic resolution STM images for a uranium compound taken at room temperature. The a, b, and c lattice parameters in the images confirm that the USb{sub 2} crystals cleave on the (001) basal plane as expected. The a and b dimensions were equal, with the atoms arranged in a cubic pattern. Our calculations indicate a symmetric cut between Sb planes to be the most favorable cleavage plane and U atoms to be responsible for most of the DOS measured by STM. Some strange features observed in the STM will be discussed in conjunction with ab initio calculations. The purpose of this work is to demonstrate the power of scanning tunneling microscopy (STM) techniques combined with a theoretical underpinning to determine the surface atomic structure and properties of actinide materials, such as the quasi 2-dimensional uranium dipnictide USb{sub 2} single crystal, thereby contributing to the understanding of their surface structural and electronic properties. The members of this interesting UX{sub 2} (X=P, As, Sb, Bi) series of compounds display dual localized and itinerant 5f electron behavior within the same compound due to the hybridization of the 5f orbitals with the conduction band. With the exception of UO{sub 2}, which has to be studied at elevated temperature to generate enough carriers for STM imaging, STM techniques have not been applied successfully to the characterization of the surface atomic structure of any other single crystal actinide compound, to the best of our knowledge. However, STM has been used to a limited extent for the study of some cerium compounds. STM probes electronic properties at the atomic level and can directly provide information about the local density of filled and empty states (LDOS) states simultaneously. A STM topograph provides the local atomic arrangement and spacing of the atoms on the surface, local defect structures (e.g. steps, vacancies, and kink sites) and the presence of contaminants

  19. Solid-state molecular organometallic chemistry. Single-crystal to single-crystal reactivity and catalysis with light hydrocarbon substrates.

    Science.gov (United States)

    Chadwick, F Mark; McKay, Alasdair I; Martinez-Martinez, Antonio J; Rees, Nicholas H; Krämer, Tobias; Macgregor, Stuart A; Weller, Andrew S

    2017-08-01

    Single-crystal to single-crystal solid/gas reactivity and catalysis starting from the precursor sigma-alkane complex [Rh(Cy 2 PCH 2 CH 2 PCy 2 )(η 2 η 2 -NBA)][BAr F 4 ] (NBA = norbornane; Ar F = 3,5-(CF 3 ) 2 C 6 H 3 ) is reported. By adding ethene, propene and 1-butene to this precursor in solid/gas reactions the resulting alkene complexes [Rh(Cy 2 PCH 2 CH 2 PCy 2 )(alkene) x ][BAr F 4 ] are formed. The ethene ( x = 2) complex, [Rh(Cy 2 PCH 2 CH 2 PCy 2 )(ethene) 2 ][BAr F 4 ]-Oct , has been characterized in the solid-state (single-crystal X-ray diffraction) and by solution and solid-state NMR spectroscopy. Rapid, low temperature recrystallization using solution methods results in a different crystalline modification, [Rh(Cy 2 PCH 2 CH 2 PCy 2 )(ethene) 2 ][BAr F 4 ]-Hex , that has a hexagonal microporous structure ( P 6 3 22). The propene complex ( x = 1) [Rh(Cy 2 PCH 2 CH 2 PCy 2 )(propene)][BAr F 4 ] is characterized as having a π-bound alkene with a supporting γ-agostic Rh···H 3 C interaction at low temperature by single-crystal X-ray diffraction, variable temperature solution and solid-state NMR spectroscopy, as well as periodic density functional theory (DFT) calculations. A fluxional process occurs in both the solid-state and solution that is proposed to proceed via a tautomeric allyl-hydride. Gas/solid catalytic isomerization of d 3 -propene, H 2 C 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 1111111111111111111111111111111111 1111111111111111111111111111111111

  20. In situ crystallized zirconium phenylphosphonate films with crystals vertically to the substrate and their hydrophobic, dielectric, and anticorrosion properties.

    Science.gov (United States)

    Cui, Zhaohui; Zhang, Fazhi; Wang, Lei; Xu, Sailong; Guo, Xiaoxiao

    2010-01-05

    The in situ crystallization technique has been utilized to fabricate zirconium phenylphosphonate (ZrPP) films with their hexagonal crystallite perpendicular to the copper substrate. The micro/nano roughness surface structure, as well as the intrinsic hydrophobic characteristic of the surface functional groups, affords ZrPP films excellent hydrophobicity with water contact angle (CA) ranging from 134 degrees to 151 degrees , without any low-surface-energy modification. Particularly, in the corrosive solutions such as acidic or basic solutions over a wide pH from 2 to 12, no obvious fluctuation in CA was observed for all the ZrPP film. The k values of the hydrophobic ZrPP films are in the low-k range (k feature is proposed to bear ZrPP film a more stable low-k value in an ambient atmosphere. Besides, the polarization current of ZrPP films is reduced by 2 orders of magnitude, compared to that of the untreated copper substrate. Even deposited in a vacuum oven for 30 days at room temperature, ZrPP films also show excellent corrosion resistance, indicating a stable anticorrosion property.