Parallel detection, quantification, and depth profiling of peptides with dynamic-secondary ion mass spectrometry (D-SIMS) ionized by C{sub 60}{sup +}-Ar{sup +} co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Chang, Chi-Jen [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China); Chang, Hsun-Yun; You, Yun-Wen; Liao, Hua-Yang [Research Center for Applied Sciences, Academia Sinica, Taipei 115, Taiwan (China); Kuo, Yu-Ting; Kao, Wei-Lun; Yen, Guo-Ji; Tsai, Meng-Hung [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China); Shyue, Jing-Jong, E-mail: shyue@gate.sinica.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Taipei 115, Taiwan (China)

2012-03-09

Highlights: Black-Right-Pointing-Pointer Multiple peptides are detected and quantified at the same time without labeling. Black-Right-Pointing-Pointer C{sub 60}{sup +} ion is responsible for generating molecular-specific ions at high mass. Black-Right-Pointing-Pointer The co-sputtering yielded more steady depth profile and more well defined interface. Black-Right-Pointing-Pointer The fluence of auxiliary Ar{sup +} does not affect the quantification curve. Black-Right-Pointing-Pointer The damage from Ar{sup +} is masked by high sputtering yield of C{sub 60}{sup +}. - Abstract: Time-of-flight secondary ion mass spectrometry (ToF-SIMS) using pulsed C{sub 60}{sup +} primary ions is a promising technique for analyzing biological specimens with high surface sensitivities. With molecular secondary ions of high masses, multiple molecules can be identified simultaneously without prior separation or isotope labeling. Previous reports using the C{sub 60}{sup +} primary ion have been based on static-SIMS, which makes depth profiling complicated. Therefore, a dynamic-SIMS technique is reported here. Mixed peptides in the cryoprotectant trehalose were used as a model for evaluating the parameters that lead to the parallel detection and quantification of biomaterials. Trehalose was mixed separately with different concentrations of peptides. The peptide secondary ion intensities (normalized with respect to those of trehalose) were directly proportional to their concentration in the matrix (0.01-2.5 mol%). Quantification curves for each peptide were generated by plotting the percentage of peptides in trehalose versus the normalized SIMS intensities. Using these curves, the parallel detection, identification, and quantification of multiple peptides was achieved. Low energy Ar{sup +} was used to co-sputter and ionize the peptide-doped trehalose sample to suppress the carbon deposition associated with C{sub 60}{sup +} bombardment, which suppressed the ion intensities during the depth

Ion implantation artifacts observed in depth profiling boron in silicon by secondary ion mass spectrometry

International Nuclear Information System (INIS)

Chi, P.; Simons, D.S.

1987-01-01

A comparison study of depth profiling by secondary ion mass spectrometry (SIMS) and neutron depth profiling (NDP) was recently conducted. The specimens were portions of 5 cm diameter single crystal silicon slices in which B-10 had been implanted at various fluences and energies. NDP measurements were made on a 13 mm diameter area at the center of the wafers. SIMS measurements were taken from a 60 μm diameter area approximately 16 mm from the center of the wafer. One observation that emerged from this work was an apparent discrepancy between the profiles of B-10 measured by DNP and SIMS. The peaks of the SIMS profiles were typically deeper than those of NDP by as much as 30 nm, which is 10% of the projected range for a 70 keV implant. Moreover, the profiles could not be made to coincide by either a constant shift or a proportional change of one depth scale with respect to the other. The lateral inhomogeneity of boron that these experiments have demonstrated arises from the variable contribution of ion channeling during implantation

He, U, and Th Depth Profiling of Apatite and Zircon Using Laser Ablation Noble Gas Mass Spectrometry and SIMS

Science.gov (United States)

Monteleone, B. D.; van Soest, M. C.; Hodges, K. V.; Hervig, R.; Boyce, J. W.

2008-12-01

Conventional (U-Th)/He thermochronology utilizes single or multiple grain analyses of U- and Th-bearing minerals such as apatite and zircon and does not allow for assessment of spatial variation in concentration of He, U, or Th within individual crystals. As such, age calculation and interpretation require assumptions regarding 4He loss through alpha ejection, diffusive redistribution of 4He, and U and Th distribution as an initial condition for these processes. Although models have been developed to predict 4He diffusion parameters, correct for the effect of alpha ejection on calculated cooling ages, and account for the effect of U and Th zonation within apatite and zircon, measurements of 4He, U, and Th distribution have not been combined within a single crystal. We apply ArF excimer laser ablation, combined with noble gas mass spectrometry, to obtain depth profiles within apatite and zircon crystals in order to assess variations in 4He concentration with depth. Our initial results from pre-cut, pre-heated slabs of Durango apatite, each subjected to different T-t schedules, suggest a general agreement of 4He profiles with those predicted by theoretical diffusion models (Farley, 2000). Depth profiles through unpolished grains give reproducible alpha ejection profiles in Durango apatite that deviate from alpha ejection profiles predicted for ideal, homogenous crystals. SIMS depth profiling utilizes an O2 primary beam capable of sputtering tens of microns and measuring sub-micron resolution variation in [U], [Th], and [Sm]. Preliminary results suggest that sufficient [U] and [Th] zonation is present in Durango apatite to influence the form of the 4He alpha ejection profile. Future work will assess the influence of measured [U] and [Th] zonation on previously measured 4He depth profiles. Farley, K.A., 2000. Helium diffusion from apatite; general behavior as illustrated by Durango fluorapatite. J. Geophys. Res., B Solid Earth Planets 105 (2), 2903-2914.

Multilayer analysis using SIMS: interpretation of profiles at interfaces

International Nuclear Information System (INIS)

Aucouturier, M.; Grattepain, C.; Tromson-Carli, A.; Barbe, M.; Cohen-Solal, G.; Marfaing, Y.; Chevrier, F.; Gall, H. le; Imhoff, D.

1993-01-01

Secondary ion mass spectrometry (SIMS) is a well adapted analytical method for the chemical characterization of concentration profiles in layered or multilayered materials, particularly concerning the more or less abrupt interfaces bounding those layers. It is known that the fiability and accuracy of the interface characterization may be affected by methodological factors, which alter the depth resolution such as: macroscopical or microscopical initial roughness of the substrate and/or of the layers, ion-induced roughening, effects of differential sputtering of the various elements, transitory stage of the primary ion beam implantation, ion beam induced accelerated diffusion, balistic mixing or segregation; etc.. This communication describes several examples of SIMS analysis performed on metal multilayers (Co/Cu) and on epitaxial semiconductor layers (CdTe/GaAs), focussing the interest on the particular analytical problems raised by the initial roughness and the ion induced roughening effect. The interpretation of the measured profiles, the influence of analytical parameters (such as the nature of the primary ion beam, sputtering conditions, detected ion species), and the limitations of profilometry roughness measurements, are discussed. Solutions are proposed in order to improve the depth resolution of interface characterization, including a tentative modelization of roughness effects. (orig.)

SIMS studies of low-K materials

International Nuclear Information System (INIS)

Lin Xuefeng; Smith, Stephen P.

2006-01-01

We report progress in conducting quantitative SIMS analyses of low-K materials. Electron-beam (e-beam) pre-irradiation of SIMS measurement sites was used to study the e-beam-induced effects on SIMS depth profiling of a porous organosilicate low-K material. Pre-irradiation of the sample surface using the e-beam causes a reduction in the thickness of the low-K film. SIMS profiling was used to sputter to identifiable marker positions within the pre-irradiated film. Physical measurement of the thickness of the remaining film was used to show that the e-beam-induced reduction in thickness occurs uniformly throughout the pre-irradiated film. Exposure of the film to the e-beam prior to SIMS analysis also resulted in minor changes in the composition of the film. However, pre-irradiation of the film is not part of the normal SIMS measurement procedure. We conclude that when the e-beam irradiation is used only for charge compensation during SIMS depth profiling, the SIMS analysis of the low-K material will not be significantly affected

Molecular depth profiling of trehalose using a C{sub 60} cluster ion beam

Energy Technology Data Exchange (ETDEWEB)

Wucher, Andreas [Department of Physics, University of Duisburg-Essen, D-47048 Duisburg (Germany)], E-mail: andreas.wucher@uni-due.de; Cheng Juan; Winograd, Nicholas [Department of Chemistry, Pennsylvania State University, University Park, PA 16802 (United States)

2008-12-15

Molecular depth profiling of organic overlayers was performed using a mass selected fullerene ion beam in conjunction with time-of-flight (TOF-SIMS) mass spectrometry. The characteristics of depth profiles acquired on a 300-nm trehalose film on Si were studied as a function of the impact kinetic energy and charge state of the C{sub 60} projectile ions. We find that the achieved depth resolution depends only weakly upon energy.

SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy

International Nuclear Information System (INIS)

Magee, C.W.; Hockett, R.S.; Bueyueklimanli, T.H.; Abdelrehim, I.; Marino, J.W.

2007-01-01

Numerous experimental studies for near-surface analyses of B in Si have shown that the B distribution within the top few nanometers is distorted by secondary ion mass spectrometry (SIMS) depth profiling with O 2 -flooding or normal incidence O 2 bombardment. Furthermore, the presence of surface oxide affects the X j determination as well as B profile shape when SIMS analyses are conducted while fully oxidizing the analytical area. Nuclear techniques such as elastic recoil detection (ERD), nuclear reaction analysis (NRA), and high-resolution Rutherford backscattering spectrometry (HR-RBS), are known to provide a profile shape near the surface that is free of artifacts. Comparisons with SIMS analyses have shown that SIMS analyses without fully oxidizing the analytical area agree well with these techniques at sufficiently high concentrations (where the nuclear techniques are applicable). The ability to measure both the B profile and an oxide marker with this non-oxidizing SIMS technique also allows accurate positioning of the B profile with respect to the SiO 2 /Si interface. This SIMS analysis protocol has been used to study the differences in near-surface dopant distribution for plasma-based implants. This study specifically focuses on measuring near-surface profile shapes as well as total implant doses for ultra-shallow B implants in Si especially those made with high peak B concentrations

Molecular depth profiling of organic and biological materials

Energy Technology Data Exchange (ETDEWEB)

Fletcher, John S. [Surface Analysis Research Centre, School of Chemical Engineering and Analytical Science, University of Manchester, Manchester M60 1QD (United Kingdom)]. E-mail: John.Fletcher@manchester.ac.uk; Conlan, Xavier A. [Surface Analysis Research Centre, School of Chemical Engineering and Analytical Science, University of Manchester, Manchester M60 1QD (United Kingdom); Lockyer, Nicholas P. [Surface Analysis Research Centre, School of Chemical Engineering and Analytical Science, University of Manchester, Manchester M60 1QD (United Kingdom); Vickerman, John C. [Surface Analysis Research Centre, School of Chemical Engineering and Analytical Science, University of Manchester, Manchester M60 1QD (United Kingdom)

2006-07-30

Atomic depth profiling using secondary ion mass spectrometry, SIMS, is common in the field micro-electronics; however, the generation of molecular information as a function of sample depth is difficult due to the accumulation of damage both on and beneath the sample surface. The introduction of polyatomic ion beams such as SF{sub 5} and C{sub 60} have raised the possibility of overcoming this problem as they deposit the majority of their energy in the upper surface of the sample resulting in increased sputter yields but with a complimentary reduction in sub-surface damage accumulation. In this paper we report the depth profile analysis of the bio-polymer polycaprolactone, PCL, using the polyatomic ions Au{sub 3}{sup +} and C{sub 60}{sup +} and the monoatomic Au{sup +}. Results are compared to recent analysis of a similar sample using SF{sub 5}{sup +}. C{sub 60}{sup +} depth profiling of cellulose is also demonstrated, an experiment that has been reported as unsuccessful when attempted with SF{sub 5}{sup +} implications for biological analysis are discussed.

Strong-field Photoionization of Sputtered Neutral Molecules for Molecular Depth Profiling

Science.gov (United States)

Willingham, D; Brenes, D. A.; Wucher, A

2009-01-01

Molecular depth profiles of an organic thin film of guanine vapor deposited onto a Ag substrate are obtained using a 40 keV C60 cluster ion beam in conjunction with time-of-flight secondary ion mass spectrometric (ToF-SIMS) detection. Strong-field, femtosecond photoionization of intact guanine molecules is used to probe the neutral component of the profile for direct comparison with the secondary ion component. The ability to simultaneously acquire secondary ions and photoionized neutral molecules reveals new fundamental information about the factors that influence the properties of the depth profile. Results show that there is an increased ionization probability for protonated molecular ions within the first 10 nm due to the generation of free protons within the sample. Moreover, there is a 50% increase in fragment ion signal relative to steady state values 25 nm before reaching the guanine/Ag interface as a result of interfacial chemical damage accumulation. An altered layer thickness of 20 nm is observed as a consequence of ion beam induced chemical mixing. In general, we show that the neutral component of a molecular depth profile using the strong-field photoionization technique can be used to elucidate the effects of variations in ionization probability on the yield of molecular ions as well as to aid in obtaining accurate information about depth dependent chemical composition that cannot be extracted from TOF-SIMS data alone. PMID:20495665

uleSIMS characterization of silver reference surfaces

Science.gov (United States)

Palitsin, V. V.; Dowsett, M. G.; Mata, B. Guzmán de la; Oloff, I. W.; Gibbons, R.

2006-07-01

Ultra low energy SIMS (uleSIMS) is a high sensitivity analytical technique that is normally used for ultra shallow profiling at a depth resolution of up to1 nm. This work describes the use of uleSIMS as both a spectroscopic and depth-profiling tool for the characterization of the early stages of corrosion formed on reference surfaces of silver. These samples are being developed to help with the characterization of tarnished surfaces in a cultural heritage context, and uleSIMS enables the tarnishing to be studied from its very earliest stages due to its high sensitivity (ppm-ppb) and surface specificity. We show that, uleSIMS can be used effectively to study the surface chemistry and aid the development of reference surfaces themselves. In particular, handling contaminants, surface dust, and residues from polishing are relatively easy to identify allowing them to be separated from the parts of the mass spectrum specific to the early stages of corrosion.

Shave-off depth profiling: Depth profiling with an absolute depth scale

International Nuclear Information System (INIS)

Nojima, M.; Maekawa, A.; Yamamoto, T.; Tomiyasu, B.; Sakamoto, T.; Owari, M.; Nihei, Y.

2006-01-01

Shave-off depth profiling provides profiling with an absolute depth scale. This method uses a focused ion beam (FIB) micro-machining process to provide the depth profile. We show that the shave-off depth profile of a particle reflected the spherical shape of the sample and signal intensities had no relationship to the depth. Through the introduction of FIB micro-sampling, the shave-off depth profiling of a dynamic random access memory (DRAM) tip was carried out. The shave-off profile agreed with a blue print from the manufacturing process. Finally, shave-off depth profiling is discussed with respect to resolutions and future directions

Sub-keV secondary ion mass spectrometry depth profiling: comparison of sample rotation and oxygen flooding

International Nuclear Information System (INIS)

Liu, R.; Wee, A.T.S.

2004-01-01

Following the increasingly stringent requirements in the characterization of sub-micron IC devices, an understanding of the various factors affecting ultra shallow depth profiling in secondary ion mass spectrometry (SIMS) has become crucial. Achieving high depth resolution (of the order of 1 nm) is critical in the semiconductor industry today, and various methods have been developed to optimize depth resolution. In this paper, we will discuss ultra shallow SIMS depth profiling using B and Ge delta-doped Si samples using low energy 0.5 keV O 2 + primary beams. The relationship between depth resolution of the delta layers and surface topography measured by atomic force microscopy (AFM) is studied. The effect of oxygen flooding and sample rotation, used to suppress surface roughening is also investigated. Oxygen flooding was found to effectively suppress roughening and gives the best depth resolution for B, but sample rotation gives the best resolution for Ge. Possible mechanisms for this are discussed

3D molecular imaging SIMS

Energy Technology Data Exchange (ETDEWEB)

Gillen, Greg [Surface and Microanalysis Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899-8371 (United States)]. E-mail: Greg.gillen@nist.gov; Fahey, Albert [Surface and Microanalysis Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899-8371 (United States); Wagner, Matt [Surface and Microanalysis Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899-8371 (United States); Mahoney, Christine [Surface and Microanalysis Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899-8371 (United States)

2006-07-30

Thin monolayer and bilayer films of spin cast poly(methyl methacrylate) (PMMA), poly(2-hydroxyethyl methacrylate) (PHEMA), poly(lactic) acid (PLA) and PLA doped with several pharmaceuticals have been analyzed by dynamic SIMS using SF{sub 5} {sup +} polyatomic primary ion bombardment. Each of these systems exhibited minimal primary beam-induced degradation under cluster ion bombardment allowing molecular depth profiles to be obtained through the film. By combing secondary ion imaging with depth profiling, three-dimensional molecular image depth profiles have been obtained from these systems. In another approach, bevel cross-sections are cut in the samples with the SF{sub 5} {sup +} primary ion beam to produce a laterally magnified cross-section of the sample that does not contain the beam-induced damage that would be induced by conventional focussed ion beam (FIB) cross-sectioning. The bevel surface can then be examined using cluster SIMS imaging or other appropriate microanalysis technique.

SIMS depth profiling of working environment nanoparticles

Science.gov (United States)

Konarski, P.; Iwanejko, I.; Mierzejewska, A.

2003-01-01

Morphology of working environment nanoparticles was analyzed using sample rotation technique in secondary ion mass spectrometry (SIMS). The particles were collected with nine-stage vacuum impactor during gas tungsten arc welding (GTAW) process of stainless steel and shielded metal arc welding (SMAW) of mild steel. Ion erosion of 300-400 nm diameter nanoparticles attached to indium substrate was performed with 2 keV, 100 μm diameter, Ar + ion beam at 45° ion incidence and 1 rpm sample rotation. The results show that both types of particles have core-shell morphology. A layer of fluorine, chlorine and carbon containing compounds covers stainless steel welding fume particles. The cores of these particles are enriched in iron, manganese and chromium. Outer shell of mild steel welding fume particles is enriched in carbon, potassium, chlorine and fluorine, while the deeper layers of these nanoparticles are richer in main steel components.

SIMS depth profiling of working environment nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Konarski, P.; Iwanejko, I.; Mierzejewska, A

2003-01-15

Morphology of working environment nanoparticles was analyzed using sample rotation technique in secondary ion mass spectrometry (SIMS). The particles were collected with nine-stage vacuum impactor during gas tungsten arc welding (GTAW) process of stainless steel and shielded metal arc welding (SMAW) of mild steel. Ion erosion of 300-400 nm diameter nanoparticles attached to indium substrate was performed with 2 keV, 100 {mu}m diameter, Ar{sup +} ion beam at 45 deg. ion incidence and 1 rpm sample rotation. The results show that both types of particles have core-shell morphology. A layer of fluorine, chlorine and carbon containing compounds covers stainless steel welding fume particles. The cores of these particles are enriched in iron, manganese and chromium. Outer shell of mild steel welding fume particles is enriched in carbon, potassium, chlorine and fluorine, while the deeper layers of these nanoparticles are richer in main steel components.

Measuring Compositions in Organic Depth Profiling: Results from a VAMAS Interlaboratory Study

Energy Technology Data Exchange (ETDEWEB)

Shard, A. G.; Havelund, Rasmus; Spencer, Steve J.; Gilmore, I. S.; Alexander, Morgan R.; Angerer, Tina B.; Aoyagi, Satoka; Barnes, Jean P.; Benayad, Anass; Bernasik, Andrzej; Ceccone, Giacomo; Counsell, Jonathan D.; Deeks, Christopher; Fletcher, John S.; Graham, Daniel J.; Heuser, Christian; Lee, Tae G.; Marie, Camille; Marzec, Mateusz M.; Mishra, Gautam; Rading, Derk; Renault, Oliver; Scurr, David J.; Shon, Hyun K.; Spampinato, Valentina; Tian, Hua; Wang, Fuyi; Winograd, Nicholas; Wu, Kui; Wucher, Andreas; Zhou, Yufan; Zhu, Zihua

2015-07-23

We report the results of a VAMAS (Versailles Project on Advanced Materials and Standards) interlaboratory study on the measurement of composition in organic depth profiling. Layered samples with known binary compositions of Irganox 1010 and either Irganox 1098 or Fmoc-pentafluoro-L-phenylalanine in each layer were manufactured in a single batch and distributed to more than 20 participating laboratories. The samples were analyzed using argon cluster ion sputtering and either X-ray Photoelectron Spectroscopy (XPS) or Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) to generate depth profiles. Participants were asked to estimate the volume fractions in two of the layers and were provided with the compositions of all other layers. Participants using XPS provided volume fractions within 0.03 of the nominal values. Participants using ToF-SIMS either made no attempt, or used various methods that gave results ranging in error from 0.02 to over 0.10 in volume fraction, the latter representing a 50% relative error for a nominal volume fraction of 0.2. Error was predominantly caused by inadequacy in the ability to compensate for primary ion intensity variations and the matrix effect in SIMS. Matrix effects in these materials appear to be more pronounced as the number of atoms in both the primary analytical ion and the secondary ion increase. Using the participants’ data we show that organic SIMS matrix effects can be measured and are remarkably consistent between instruments. We provide recommendations for identifying and compensating for matrix effects. Finally we demonstrate, using a simple normalization method, that virtually all ToF-SIMS participants could have obtained estimates of volume fraction that were at least as accurate and consistent as XPS.

Application of SIMS to the analysis of environmental samples

International Nuclear Information System (INIS)

Seyama, Haruhiko

2003-01-01

As an example of surface analysis of environmental samples, SIMS was applied to airborne particulates, fish otoliths (a calcareous ear-stone) and biotites (a rock-forming aluminosilicate mineral). Airborne particulates deposited on leaf surface were analyzed directly by fast atom bombardment (FAB)-SIMS using an O 2 primary neutral beam. Some metal elements, such as Pb, of aerosol origin could be detected. Local areas of a thin section of an otolith were analyzed by FAB-SIMS. Line scans and images of secondary ions revealed seasonal periodicity in Sr, Na and K concentrations in the otolith that corresponded to the annual band structure. Surface alteration of acid-treated and naturally weathered biotites was studied by SIMS depth profiling using an O - primary ion. The depth profile of the acid-treated biotite showed the formation of an altered surface layer rich in Si. In contrast a thick altered surface layer was not observed and Al was held on the surface under natural weathering

Some applications of SIMS in conservation science, archaeometry and cosmochemistry

International Nuclear Information System (INIS)

McPhail, D.S.

2006-01-01

Some applications of SIMS in conservation science, archaeometry and cosmochemistry are described. Ultra-low energy SIMS depth profiling and TOF-SIMS imaging are used to study the corrosion of low-lime glass vessels from the V and A museum. Static SIMS and focused ion beam (FIB) SIMS are used to study the effects of laser cleaning on museum artefacts. Archaeological glass from Raqqa, Syria is studied with FIB-SIMS and micrometeorite impacts on space vessels are studied with FIB and FIB-SIMS. The new analytical challenges provided to the SIMS community by these materials are presented and the ethical issues associated with sampling and destructive analysis discussed

Surface analysis and depth profiling of corrosion products formed in lead pipes used to supply low alkalinity drinking water.

Science.gov (United States)

Davidson, C M; Peters, N J; Britton, A; Brady, L; Gardiner, P H E; Lewis, B D

2004-01-01

Modern analytical techniques have been applied to investigate the nature of lead pipe corrosion products formed in pH adjusted, orthophosphate-treated, low alkalinity water, under supply conditions. Depth profiling and surface analysis have been carried out on pipe samples obtained from the water distribution system in Glasgow, Scotland, UK. X-ray diffraction spectrometry identified basic lead carbonate, lead oxide and lead phosphate as the principal components. Scanning electron microscopy/energy-dispersive x-ray spectrometry revealed the crystalline structure within the corrosion product and also showed spatial correlations existed between calcium, iron, lead, oxygen and phosphorus. Elemental profiling, conducted by means of secondary ion mass spectrometry (SIMS) and secondary neutrals mass spectrometry (SNMS) indicated that the corrosion product was not uniform with depth. However, no clear stratification was apparent. Indeed, counts obtained for carbonate, phosphate and oxide were well correlated within the depth range probed by SIMS. SNMS showed relationships existed between carbon, calcium, iron, and phosphorus within the bulk of the scale, as well as at the surface. SIMS imaging confirmed the relationship between calcium and lead and suggested there might also be an association between chloride and phosphorus.

Response function during oxygen sputter profiling and its application to deconvolution of ultrashallow B depth profiles in Si

International Nuclear Information System (INIS)

Shao Lin; Liu Jiarui; Wang Chong; Ma, Ki B.; Zhang Jianming; Chen, John; Tang, Daniel; Patel, Sanjay; Chu Weikan

2003-01-01

The secondary ion mass spectrometry (SIMS) response function to a B 'δ surface layer' has been investigated. Using electron-gun evaporation combined with liquid nitrogen cooling of target, we are able to deposit an ultrathin B layer without detectable island formation. The B spatial distribution obtained from SIMS is exponentially decaying with a decay length approximately a linear function of the incident energy of the oxygen during the SIMS analysis. Deconvolution with the response function has been applied to reconstruct the spatial distribution of ultra-low-energy B implants. A correction to depth and yield scales due to transient sputtering near the Si surface region was also applied. Transient erosion shifts the profile shallower, but beam mixing shifts it deeper. These mutually compensating effects make the adjusted distribution almost the same as original data. The one significant difference is a buried B peak observed near the surface region

Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

Directory of Open Access Journals (Sweden)

Patrick Philipp

2016-11-01

Full Text Available The analysis of polymers by secondary ion mass spectrometry (SIMS has been a topic of interest for many years. In recent years, the primary ion species evolved from heavy monatomic ions to cluster and massive cluster primary ions in order to preserve a maximum of organic information. The progress in less-damaging sputtering goes along with a loss in lateral resolution for 2D and 3D imaging. By contrast the development of a mass spectrometer as an add-on tool for the helium ion microscope (HIM, which uses finely focussed He+ or Ne+ beams, allows for the analysis of secondary ions and small secondary cluster ions with unprecedented lateral resolution. Irradiation induced damage and depth profiling capabilities obtained with these light rare gas species have been far less investigated than ion species used classically in SIMS. In this paper we simulated the sputtering of multi-layered polymer samples using the BCA (binary collision approximation code SD_TRIM_SP to study preferential sputtering and atomic mixing in such samples up to a fluence of 1018 ions/cm2. Results show that helium primary ions are completely inappropriate for depth profiling applications with this kind of sample materials while results for neon are similar to argon. The latter is commonly used as primary ion species in SIMS. For the two heavier species, layers separated by 10 nm can be distinguished for impact energies of a few keV. These results are encouraging for 3D imaging applications where lateral and depth information are of importance.

Formation of oxides and segregation of mobile atoms during SIMS profiling of Si with oxygen ions

Energy Technology Data Exchange (ETDEWEB)

Petravic, M.; Williams, J.S.; Svensson, B.G.; Conway, M. [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

1993-12-31

An oxygen beam is commonly used in secondary ion mass spectroscopy (SIMS) analysis to enhance the ionization probability for positive secondary ions. It has been observed, however, that this technique produces in some cases a great degradation of depth resolution. The most pronounced effects have been found for impurities in silicon under oxygen bombardment at angles of incidence smaller than {approx} 30 deg from the surface normal. A new approach is described which involved broadening of SIMS profiles for some mobile atoms, such as Cu, Ni and Au, implanted into silicon. The anomalously large broadening is explained in terms of segregation at a SiO{sub 2}/Si interface formed during bombardment with oxygen at impact angles less than 30 deg. 2 refs., 1 tab., 4 figs.

Formation of oxides and segregation of mobile atoms during SIMS profiling of Si with oxygen ions

Energy Technology Data Exchange (ETDEWEB)

Petravic, M; Williams, J S; Svensson, B G; Conway, M [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

1994-12-31

An oxygen beam is commonly used in secondary ion mass spectroscopy (SIMS) analysis to enhance the ionization probability for positive secondary ions. It has been observed, however, that this technique produces in some cases a great degradation of depth resolution. The most pronounced effects have been found for impurities in silicon under oxygen bombardment at angles of incidence smaller than {approx} 30 deg from the surface normal. A new approach is described which involved broadening of SIMS profiles for some mobile atoms, such as Cu, Ni and Au, implanted into silicon. The anomalously large broadening is explained in terms of segregation at a SiO{sub 2}/Si interface formed during bombardment with oxygen at impact angles less than 30 deg. 2 refs., 1 tab., 4 figs.

Installation of a shielded SIMS in CEA Cadarache

International Nuclear Information System (INIS)

Desgranges, L.; Pasquet, B.; Rasser, B.

2002-01-01

A shielded SIMS 6f has been installed in the LECA in 1999 and will examine nuclear fuels before the end of this year. Meanwhile several studies have been realised to test its technical performance for nuclear materials analysis. After a brief presentation of the design of the shielded SIMS, five examples of preliminary results will be underlined. In the nuclear field, SIMS is currently used for the analysis of Zircaloy cladding corrosion because it can detect light elements like boron or lithium. More than a quantitative measurement of isotopes, it was possible with our SIMS to produce a two dimension image of the corrosion layer focusing on the protective layer. SIMS has also the advantage to detect isotopes with a low concentration. This property will be enlightened with some results obtained on sulphur in UO 2 . Because SIMS uses the erosion of the sample surface, it is possible to make depth profile. This possibility will be demonstrated on water altered glass samples on which the altered layer will be evidenced on depth profile. The last application of SIMS presented in the paper is addressed to nuclear fuel with detection of xenon. Fission gases release is indeed of first importance for nuclear fuel because it affects fuel swelling, rod internal pressure, fuel thermal conductivity via the formation of pores etc. We have demonstrated that it was possible to measure xenon on an unirradiated UO 2 sample implanted with xenon. It was also proved that xenon could be measured in gaseous state, which would make possible the measurement of xenon filling pores. (author)

Understanding of CO{sub 2} interaction with thermally grown SiO{sub 2} on Si using IBA depth profiling techniques

Energy Technology Data Exchange (ETDEWEB)

Deokar, Geetanjali; D’Angelo, Marie; Briand, Emrick [INSP, UPMC, CNRS UMR 7588, 4 Place Jussieu, Paris F-75005 (France); Deville Cavellin, Catherine, E-mail: deville@univ-paris12.fr [INSP, UPMC, CNRS UMR 7588, 4 Place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 Av., De Gaulle, Créteil F-94010 (France)

2013-06-01

Interactions between CO{sub 2} and SiO{sub 2} films thermally grown on Si have been studied using {sup 18}O and {sup 13}C as isotopic tracers associated with ion beam analysis (IBA) depth profiling techniques. From secondary ion mass spectrometry (SIMS) measurements no carbon from CO{sub 2} is detected in the silica while it is found in Si. These results suggest that CO{sub 2} diffuses through the silica. Exchanges of oxygen between CO{sub 2} and silica can be observed from {sup 18}O to {sup 16}O SIMS signals variation. The oxygen concentration depth profiles were determined quantitatively using the narrow resonance near 151 keV in the {sup 18}O(p,α){sup 15}N nuclear reaction (Narrow Resonance Profiling, NRP). We demonstrate that two distinct oxygen exchanges processes co-exist and we determine the diffusion coefficient of the CO{sub 2} molecule in the silica at 1100 °C.

Investigating the Fundamentals of Molecular Depth Profiling Using Strong-field Photoionization of Sputtered Neutrals

Science.gov (United States)

Willingham, D.; Brenes, D. A.; Winograd, N.; Wucher, A.

2010-01-01

Molecular depth profiles of model organic thin films were performed using a 40 keV C60+ cluster ion source in concert with TOF-SIMS. Strong-field photoionization of intact neutral molecules sputtered by 40 keV C60+ primary ions was used to analyze changes in the chemical environment of the guanine thin films as a function of ion fluence. Direct comparison of the secondary ion and neutral components of the molecular depth profiles yields valuable information about chemical damage accumulation as well as changes in the molecular ionization probability. An analytical protocol based on the erosion dynamics model is developed and evaluated using guanine and trehalose molecular secondary ion signals with and without comparable laser photoionization data. PMID:26269660

Trace element analysis in silicon by accelerator SIMS

Energy Technology Data Exchange (ETDEWEB)

Ender, R.M.; Suter, M. [Eidgenoessische Technische Hochschule, Zurich (Switzerland); Doebeli, M.; Synal, H.A. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

1997-09-01

The accelerator SIMS technique has been applied to Si samples implanted with different elements. It has been shown that concentrations of several trace elements can be analysed down to about 1 ppb in depth profiling mode. (author) 2 figs., 1 ref.

Quantization of secondary ion mass spectrometry (SIMS) data using external and internal standards

International Nuclear Information System (INIS)

Gnaser, H.

1983-01-01

Some aspects of multi-dimensional characterization of solids by secondary ion mass spectrometry (SIMS) are given. A theoretical part discusses methods for the quantization of SIMS data and the most prominent effects of ion-solid interactions as related to SIMS. After a description of the instrument used for experiments (a quadrupole-equipped ion microprobe featuring a liquid metal ion source in addition to the standard duoplasmatron gas ion source) the first experimental section is devoted to the determination of practical sensitivities and relative sensitivity factors for selected pure elements, binary and treary alloys and multicomponent systems. For 23 pure elements practical sensitivities under O + 2 bombardment also have been compared to those under In + -bombardment; it was shown that on oxygen saturated surfaces yields under In + -bombardment are higher, this making feasible use of submicron In-beams for surface analysis. In the second experimental section boron implants in silicon have been used for studying depth profiling capabilities of the instrument. Sputtering yields of Si and degrees of ionization of both B and Si have been measured. It has been shown that implantation profiles may deviate considerably from Gaussian but can be described by means of mathematical distribution functions. In the third experimental section depth resolution of the erosion process has been studied by profiling a Ni/Cr multilayer sample (100 A single layer) and been found to be approximately constant over the depth range investigated. Quantization of depth profiles, usually distorted by matrix effects, has been attempted using the primary beam species (In) as internal implantation standard. Some problems in connection with the conversion of secondary ion micrographs to concentration maps are discussed. Elemental detection limits in multidimensional SIMS analysis are given in dependence of primary beam size and total eroded depth. (Author)

Identification of nitrates and sulphates with dynamic SIMS

International Nuclear Information System (INIS)

Fichtner, M.; Goschnick, J.; Ache, H.J.

1994-01-01

Sputter conditions are outlined for the identification of chemically sensitive salt compounds, such as nitrates or sulphates, in multicomponent samples of environmental origin using dynamic SIMS for depth-profiling with nanoscale resolution. Sputtering with 1 keV Xe + has been found to be appropriate to enable both the emission of decisive molecular ions with enough intensity as well as substantial erosion for depth-profiling. The use of heavy projectiles reduces the destruction of chemical compounds in the surface of the solid and enhances sensitivity and identification power of SIMS. The method was applied to the analysis of urban outdoor aerosol particles to investigate the conversion of NaCl into Na 2 SO 4 or NaNO 3 by the interaction of sea salt aerosol with the atmospheric pollutants NO x and SO x . Only NaNO 3 was found in the sea salt fraction. (orig.)

TOF-SIMS studies of yttria-stabilised zirconia

DEFF Research Database (Denmark)

Hansen, Karin Vels; Norrman, Kion; Mogensen, Mogens Bjerg

2006-01-01

The surface of an as-polished and an as-sintered yttria-stabilised zirconia pellet was analysed with XPS and TOF-SIMS (depth profiling and imaging) in order to study the distribution of impurities. The polished sample was slightly contaminated with Na, K, Mg and Ca. The sintered sample showed...

3D Auger quantitative depth profiling of individual nanoscaled III–V heterostructures

Energy Technology Data Exchange (ETDEWEB)

Hourani, W. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Gorbenko, V. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Univ. Grenoble Alpes, LTM, CNRS, F-38000 Grenoble (France); Barnes, J.-P.; Guedj, C. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Cipro, R.; Moeyaert, J.; David, S.; Bassani, F.; Baron, T. [Univ. Grenoble Alpes, LTM, CNRS, F-38000 Grenoble (France); Martinez, E., E-mail: eugenie.martinez@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France)

2016-11-15

Highlights: • The nanoscale chemical characterization of III–V heterostructures is performed using Auger depth profiling below decananometric spatial resolution. • Reliable indium quantification is achieved on planar structures for thicknesses down to 9 nm. • Quantitative 3D compositional depth profiles are obtained on patterned structures, with sufficient lateral resolution to analyze one single trench. • The Auger intrinsic spatial resolution is estimated around 150–200 nm using a comparison with HAADF-STEM. • Auger and SIMS provide reliable in-depth chemical analysis of such complex 3D heterostructures, in particular regarding indium quantification. - Abstract: The nanoscale chemical characterization of III–V heterostructures is performed using Auger depth profiling below decananometric spatial resolution. This technique is successfully applied to quantify the elemental composition of planar and patterned III–V heterostructures containing InGaAs quantum wells. Reliable indium quantification is achieved on planar structures for thicknesses down to 9 nm. Quantitative 3D compositional depth profiles are obtained on patterned structures, for trench widths down to 200 nm. The elemental distributions obtained in averaged and pointed mode are compared. For this last case, we show that Zalar rotation during sputtering is crucial for a reliable indium quantification. Results are confirmed by comparisons with secondary ion mass spectrometry, photoluminescence spectroscopy, transmission electron microscopy and electron dispersive X-ray spectroscopy. The Auger intrinsic spatial resolution is quantitatively measured using an original methodology based on the comparison with high angle annular dark field scanning transmission electron microscopy measurements at the nanometric scale.

Front and back side SIMS analysis of boron-doped delta-layer in diamond

Energy Technology Data Exchange (ETDEWEB)

Pinault-Thaury, M.-A., E-mail: marie-amandine.pinault-thaury@uvsq.fr [Groupe d’Etude de la Matière Condensée, CNRS, University of Paris Saclay, University of Versailles St Quentin, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France); Jomard, F. [Groupe d’Etude de la Matière Condensée, CNRS, University of Paris Saclay, University of Versailles St Quentin, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France); Mer-Calfati, C.; Tranchant, N.; Pomorski, M.; Bergonzo, P.; Arnault, J.-C. [CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette (France)

2017-07-15

Highlights: • Front and back side SIMS analysis of delta-layer boron-doped is a first for diamond. • Combination of front and back side depth profiling improves delta-layer analyses. • Sharp interfaces are evidenced on both sides of the delta-layer boron-doped diamond. • The growth of delta-layer boron doped diamond is now well controlled. - Abstract: Nowadays the availability of very thin diamond layers in the range of nanometers as well as the possibility to characterize such delta-layer structures are required for the field of photonics and spintronics, but also for the development of next generation high power devices involving boron doping. The fabrication of diamond structures with abrupt interfaces such as superlattices and quantum wells has been recently improved. A very accurate characterization is then essential even though the analysis of such structures is arduous and challenging. SIMS analyses are commonly used to obtain depth profiles of dopants. However, below 10 nm in thickness, SIMS induced ion mixing effects which are no longer negligible. Then the raw SIMS profile might differ from the real dopant profile. In this study, we have analyzed a diamond structure containing a thin boron epilayer, especially synthesized to achieve SIMS analysis on both sides and to overcome the effects of ion mixing. We evidence the ion mixing induced by primary ions. Such a structure is a delta diamond layer, comparable to classical boron-doped delta-layer in silicon. Our results show that the growth of boron-doped delta-layer in diamond is now well controlled in terms of thickness and interfaces.

Dual beam organic depth profiling using large argon cluster ion beams

Science.gov (United States)

Holzweber, M; Shard, AG; Jungnickel, H; Luch, A; Unger, WES

2014-01-01

Argon cluster sputtering of an organic multilayer reference material consisting of two organic components, 4,4′-bis[N-(1-naphthyl-1-)-N-phenyl- amino]-biphenyl (NPB) and aluminium tris-(8-hydroxyquinolate) (Alq3), materials commonly used in organic light-emitting diodes industry, was carried out using time-of-flight SIMS in dual beam mode. The sample used in this study consists of a ∽400-nm-thick NPB matrix with 3-nm marker layers of Alq3 at depth of ∽50, 100, 200 and 300 nm. Argon cluster sputtering provides a constant sputter yield throughout the depth profiles, and the sputter yield volumes and depth resolution are presented for Ar-cluster sizes of 630, 820, 1000, 1250 and 1660 atoms at a kinetic energy of 2.5 keV. The effect of cluster size in this material and over this range is shown to be negligible. © 2014 The Authors. Surface and Interface Analysis published by John Wiley & Sons Ltd. PMID:25892830

Characterization of anodic barrier films on tantalum and 1100 aluminum by ISS/SIMS

International Nuclear Information System (INIS)

McCune, R.C.

1978-01-01

Ion scattering spectrometry (ISS) and concurrent secondary ion mass spectrometry (SIMS) were used to determine the depth profiles of anodic barrier oxide films grown on tantalum and type 1100 aluminum. The sputter rate in each case was determined from the film thickness measured by the anodic overvoltage, and the penetration time determined by the decrease in intensity of the metal oxide fragment observed using SIMS. A mixture of helium and neon ions was used to sputter aluminum oxide films in order to observe ion scattering of helium by oxygen, while taking advantage of the higher sputtering rate available with neon. A comparison of sputter rates for helium and neon on tantalum oxide indicated that neon sputtered the film at a rate eight times that of helium. SIMS depth profiling of the residual boron in the anodic aluminum oxide indicated a mixing effect which did not permit adequate resolution of the interface between the oxide film and the underlying metal

Depth-profile analysis of thermoelectric layers on Si wafers by pulsed r.f. glow discharge time-of-flight mass spectrometry

International Nuclear Information System (INIS)

Reinsberg, K.-G.; Schumacher, C.; Tempez, A.; Nielsch, K.; Broekaert, J.A.C.

2012-01-01

In this work the depth-profile analysis of thermoelectric layers deposited on Au and Cr covered Si wafers with the aid of pulsed radiofrequency glow discharge time-of-flight mass spectrometry (pulsed RF-GD-TOFMS also called plasma profiling TOFMS (PP-TOFMS™)) is described. For thermoelectric materials the depth resolutions obtained with both PP-TOFMS and secondary ion mass spectrometry (SIMS) are shown to be well comparable and in the order of the roughness of the corresponding layers (between 20 and 3700 nm). With both methods a direct solid analysis without any preparation steps is possible. In addition, the analysis of the samples with PP-TOFMS proved to be faster by a factor of 26 compared to SIMS, as sputtering rates were found to be 80 nm s −1 and 3 nm s −1 , respectively. For the analyzed samples the results of PP-TOFMS and SIMS show that a homogeneous deposition was obtained. Quantitative results for all samples could also be obtained directly by PP-TOFMS when the stoichiometry of one sample was determined beforehand for instance by inductively coupled plasma optical emission spectrometry (ICP-OES) and scanning electron microscopy energy dispersive X-ray fluorescence spectrometry (SEM-EDX). For Bi 2 Te 3 the standard deviation for the main component concentrations within one sample then is found to be between 1.1% and 1.9% and it is 3.6% from sample to sample. For Sb 2 Te 3 the values within one sample are from 1.7% to 4.2% and from sample to sample 5.3%, respectively. - Highlights: ► Depth resolution in sub micrometer size by glow discharge mass spectrometry. ► Bi and Sb telluride layers composition with GD-TOF-MS, ICP-OES and SEM-EDX agree. ► Homogeneities of layers measured with GD-TOF-MS and SIMS agree.

Observed damage during Argon gas cluster depth profiles of compound semiconductors

Energy Technology Data Exchange (ETDEWEB)

Barlow, Anders J., E-mail: anders.barlow@ncl.ac.uk; Portoles, Jose F.; Cumpson, Peter J. [National EPSRC XPS Users' Service (NEXUS), School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom)

2014-08-07

Argon Gas Cluster Ion Beam (GCIB) sources have become very popular in XPS and SIMS in recent years, due to the minimal chemical damage they introduce in the depth-profiling of polymer and other organic materials. These GCIB sources are therefore particularly useful for depth-profiling polymer and organic materials, but also (though more slowly) the surfaces of inorganic materials such as semiconductors, due to the lower roughness expected in cluster ion sputtering compared to that introduced by monatomic ions. We have examined experimentally a set of five compound semiconductors, cadmium telluride (CdTe), gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), and zinc selenide (ZnSe) and a high-κ dielectric material, hafnium oxide (HfO), in their response to argon cluster profiling. An experimentally determined HfO etch rate of 0.025 nm/min (3.95 × 10{sup −2} amu/atom in ion) for 6 keV Ar gas clusters is used in the depth scale conversion for the profiles of the semiconductor materials. The assumption has been that, since the damage introduced into polymer materials is low, even though sputter yields are high, then there is little likelihood of damaging inorganic materials at all with cluster ions. This seems true in most cases; however, in this work, we report for the first time that this damage can in fact be very significant in the case of InAs, causing the formation of metallic indium that is readily visible even to the naked eye.

TOF-SIMS Analysis of Red Color Inks of Writing and Printing Tools on Questioned Documents.

Science.gov (United States)

Lee, Jihye; Nam, Yun Sik; Min, Jisook; Lee, Kang-Bong; Lee, Yeonhee

2016-05-01

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a well-established surface technique that provides both elemental and molecular information from several monolayers of a sample surface while also allowing depth profiling or image mapping to be performed. Static TOF-SIMS with improved performances has expanded the application of TOF-SIMS to the study of a variety of organic, polymeric, biological, archaeological, and forensic materials. In forensic investigation, the use of a minimal sample for the analysis is preferable. Although the TOF-SIMS technique is destructive, the probing beams have microsized diameters so that only small portion of the questioned sample is necessary for the analysis, leaving the rest available for other analyses. In this study, TOF-SIMS and attenuated total reflectance Fourier transform infrared (ATR-FTIR) were applied to the analysis of several different pen inks, red sealing inks, and printed patterns on paper. The overlapping areas of ballpoint pen writing, red seal stamping, and laser printing in a document were investigated to identify the sequence of recording. The sequence relations for various cases were determined from the TOF-SIMS mapping image and the depth profile. TOF-SIMS images were also used to investigate numbers or characters altered with two different red pens. TOF-SIMS was successfully used to determine the sequence of intersecting lines and the forged numbers on the paper. © 2016 American Academy of Forensic Sciences.

Quantitative hydrogen analysis in fusion-relevant materials by SIMS

International Nuclear Information System (INIS)

Jaeger, W.

1991-04-01

In fusion reactors graphite brazed on metallic substrates is commonly used for plasma-exposed components of the First Wall. Exposed to high heat-, hydrogen- and deuterium-fluxes, the stability of the braze under such conditions is essential. A sample of graphite brazed with zirconium on a molybdenum high temperature alloy was cut and exposed to a deuterium plasma (dose 10 22 cm -2 ). Secondary Ion Mass Spectroscopy (SIMS) has proven to combine high sensitivity to hydrogen and deuterium with the ability to perform depth profiling. Thus SIMS investigations should determine the extent of deuterium diffusion into the braze and the substrate. SIMS measurement conditions were optimized with special regard to energy filtering and to computer controlled magnetic field adjustment. Step scan measurements to obtain information on the surface concentration of deuterium and depth profiling to determine the distribution of the bulk concentration were performed. In the braze, directly exposed to the plasma, the deuterium content was up to a few atomic percent. The shielding of a thin graphite layer (0.5 mm) reduced the deuterium content to approximately 300 ppm at., but diffusion was still present. For deuterium quantification a homogenous graphite standard and molybdenum- and zirconium-implantation standards were used. With respect to the diffusivity of deuterium, MoD/Mo and ZrD/Zr ratios were measured. Different energy filtering was used to distinguish trapped and free deuterium. The comparison of experimental depth profiles with theoretical Monte Carlo simulations showed the effects of implantation damage in the bulk and of trapping. The relative sensitivity factors for deuterium in graphite, molybdenum and zirconium were calculated. (author)

Molecular depth profiling of multi-layer systems with cluster ion sources

Energy Technology Data Exchange (ETDEWEB)

Cheng, Juan [Department of Chemistry, Penn State University, University Park, PA 16802 (United States); Winograd, Nicholas [Department of Chemistry, Penn State University, University Park, PA 16802 (United States)]. E-mail: nxw@psu.edu

2006-07-30

Cluster bombardment of molecular films has created new opportunities for SIMS research. To more quantitatively examine the interaction of cluster beams with organic materials, we have developed a reproducible platform consisting of a well-defined sugar film (trehalose) doped with peptides. Molecular depth profiles have been acquired with these systems using C{sub 60} {sup +} bombardment. In this study, we utilize this platform to determine the feasibility of examining buried interfaces for multi-layer systems. Using C{sub 60} {sup +} at 20 keV, several systems have been tested including Al/trehalose/Si, Al/trehalose/Al/Si, Ag/trehalose/Si and ice/trehalose/Si. The results show that there can be interactions between the layers during the bombardment process that prevent a simple interpretation of the depth profile. We find so far that the best results are obtained when the mass of the overlayer atoms is less than or nearly equal to the mass of the atoms in buried molecules. In general, these observations suggest that C{sub 60} {sup +} bombardment can be successfully applied to interface characterization of multi-layer systems if the systems are carefully chosen.

Investigation of the depth profile of ion beam induced nanopatterns on Si with simultaneous metal incorporation

Energy Technology Data Exchange (ETDEWEB)

Khanbabaee, Behnam; Arezki, Bahia; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Siegen (Germany); Cornejo, Marina; Frost, Frank [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

2011-07-01

Ion beam sputtering of semiconductor surfaces can modify the surface and produce a diversity of surface topographies such as periodic ripples or dot structures depended on sputtering parameters. Well ordered nanostructured surfaces have widely technological applications. Recent experiments have shown that the incorporation of metallic impurity atoms during the sputtering process plays a crucial role in pattern formation on the surfaces. These findings offer a new degree of freedom to control pattern formation. In this contribution we report on surface patterning due to Kr ion beam erosion on silicon surfaces with simultaneous Fe and Cr incorporation. We used X-ray reflectivity (XRR) to determine the depth profiles of metal ions as function of ion beam divergence angles and the mean incidence angle of the ions with respect to the surface normal. Depth profiles are correlated with degree of pattern formation determined by AFM. We show that the mean penetration depth and concentration of metal ions depends on the divergence angle of Kr beam provided by Kaufman source which supports the assumption that metal ions are created due to parasitic interaction of the Kr beam with the steel plate lining. The evaluated depth profile by XRR is in good agreement with SIMS and RBS results.

Depth-profile analysis of thermoelectric layers on Si wafers by pulsed r.f. glow discharge time-of-flight mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

Reinsberg, K.-G. [Institute for Inorganic and Applied Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, D-20146 Hamburg (Germany); Schumacher, C. [Institute for Applied Physics, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg (Germany); Tempez, A. [HORIBA Jobin Yvon, 16-18 rue du Canal, F-91160 Longjumeau (France); Nielsch, K. [Institute for Applied Physics, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg (Germany); Broekaert, J.A.C., E-mail: jose.broekaert@chemie.uni-hamburg.de [Institute for Inorganic and Applied Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, D-20146 Hamburg (Germany)

2012-10-15

In this work the depth-profile analysis of thermoelectric layers deposited on Au and Cr covered Si wafers with the aid of pulsed radiofrequency glow discharge time-of-flight mass spectrometry (pulsed RF-GD-TOFMS also called plasma profiling TOFMS (PP-TOFMS Trade-Mark-Sign )) is described. For thermoelectric materials the depth resolutions obtained with both PP-TOFMS and secondary ion mass spectrometry (SIMS) are shown to be well comparable and in the order of the roughness of the corresponding layers (between 20 and 3700 nm). With both methods a direct solid analysis without any preparation steps is possible. In addition, the analysis of the samples with PP-TOFMS proved to be faster by a factor of 26 compared to SIMS, as sputtering rates were found to be 80 nm s{sup -1} and 3 nm s{sup -1}, respectively. For the analyzed samples the results of PP-TOFMS and SIMS show that a homogeneous deposition was obtained. Quantitative results for all samples could also be obtained directly by PP-TOFMS when the stoichiometry of one sample was determined beforehand for instance by inductively coupled plasma optical emission spectrometry (ICP-OES) and scanning electron microscopy energy dispersive X-ray fluorescence spectrometry (SEM-EDX). For Bi{sub 2}Te{sub 3} the standard deviation for the main component concentrations within one sample then is found to be between 1.1% and 1.9% and it is 3.6% from sample to sample. For Sb{sub 2}Te{sub 3} the values within one sample are from 1.7% to 4.2% and from sample to sample 5.3%, respectively. - Highlights: Black-Right-Pointing-Pointer Depth resolution in sub micrometer size by glow discharge mass spectrometry. Black-Right-Pointing-Pointer Bi and Sb telluride layers composition with GD-TOF-MS, ICP-OES and SEM-EDX agree. Black-Right-Pointing-Pointer Homogeneities of layers measured with GD-TOF-MS and SIMS agree.

Micro-Raman depth profile investigations of beveled Al+-ion implanted 6H-SiC samples

International Nuclear Information System (INIS)

Zuk, J.; Romanek, J.; Skorupa, W.

2009-01-01

6H-SiC single crystals were implanted with 450 keV Al + -ions to a fluence of 3.4 x 10 15 cm -2 , and in a separate experiment subjected to multiple Al + implantations with the four energies: 450, 240, 115 and 50 keV and different fluences to obtain rectangular-like depth distributions of Al in SiC. The implantations were performed along [0 0 0 1] channeling and non-channeling ('random') directions. Subsequently, the samples were annealed for 10 min at 1650 deg. C in an argon atmosphere. The depth profiles of the implanted Al atoms were obtained by secondary ion mass spectrometry (SIMS). Following implantation and annealing, the samples were beveled by mechanical polishing. Confocal micro-Raman spectroscopic investigations were performed with a 532 nm wavelength laser beam of a 1 μm focus diameter. The technique was used to determine precisely the depth profiles of TO and LO phonon lines intensity in the beveled samples to a depth of about 2000 nm. Micro-Raman spectroscopy was also found to be useful in monitoring very low levels of disorder remaining in the Al + implanted and annealed 6H-SiC samples. The micro-Raman technique combined with sample beveling also made it possible the determination of optical absorption coefficient profiles in implanted subsurface layers.

Rapid quantitative analysis of elemental composition and depth profile of Cu(In,Ga)Se{sub 2} thin solar cell film using laser-induced breakdown spectroscopy

Energy Technology Data Exchange (ETDEWEB)

In, Jung-Hwan; Kim, Chan-Kyu; Lee, Seok-Hee; Choi, Jang-Hee; Jeong, Sungho, E-mail: shjeong@gist.ac.kr

2015-03-31

Laser-induced breakdown spectroscopy (LIBS) is reported as a method for rapid quantitative analysis of elemental composition and depth profile of Cu(In,Ga)Se{sub 2} (CIGS) thin film. A calibration model considering compositional grading over depth was developed and verified with test samples. The results from eight test samples showed that the average concentration of Cu, In, Ga and Se could be predicted with a root mean square error of below 1% and a relative standard deviation of also below 1%. The depth profile of each constituent element of CIGS predicted by LIBS was close to those by Auger electron spectroscopy and secondary ion mass spectrometry. The average ablation depth per pulse during depth profiling was about 100 nm. - Highlights: • LIBS was adopted for quantitative analysis of CIGS thin film. • A calibration model considering compositional grading over depth was developed. • Concentration prediction of CIGS thin film was accurate and precise. • Quantitative depth profiling by LIBS was compared with those by AES and SIMS.

Degradation effects ad Si-depth profiling in photoresists using ion beam analysis

International Nuclear Information System (INIS)

Ijzendoorn, L.J. van; Schellekens, J.P.W.

1989-01-01

The reaction of silicon-containing vapour with a photoresist layer, as used in dry developable lithographic processes, was studied with Rutherford backscattering spectrometry (RBS). Degradation of the polymer layer was observed, but the total amount of incorporated Si was found to be constant during the measurement. Si-depth profiles were found to be independent of dose and in agreement with profiles obtained with secondary ion mass spectrometry (SIMS). The detection of hydrogen by elastic recoil detection (ERD) was used to study the degradation in detail. The decrease in hydrogen countrate from a layer of polystyrene on Si in combination with the shift of the Si-substrate edge in the corresponding RBS spectra was used for a model description. Only one degradation cross-section for hydrogen and one for carbon, both independent of beam current and dose, were required for a successful fit of the experimental data. (orig.)

SIMS of Organic Materials—Interface Location in Argon Gas Cluster Depth Profiles Using Negative Secondary Ions

Science.gov (United States)

Havelund, R.; Seah, M. P.; Tiddia, M.; Gilmore, I. S.

2018-02-01

A procedure has been established to define the interface position in depth profiles accurately when using secondary ion mass spectrometry and the negative secondary ions. The interface position varies strongly with the extent of the matrix effect and so depends on the secondary ion measured. Intensity profiles have been measured at both fluorenylmethyloxycarbonyl-uc(l)-pentafluorophenylalanine (FMOC) to Irganox 1010 and Irganox 1010 to FMOC interfaces for many secondary ions. These profiles show separations of the two interfaces that vary over some 10 nm depending on the secondary ion selected. The shapes of these profiles are strongly governed by matrix effects, slightly weakened by a long wavelength roughening. The matrix effects are separately measured using homogeneous, known mixtures of these two materials. Removal of the matrix and roughening effects give consistent compositional profiles for all ions that are described by an integrated exponentially modified Gaussian (EMG) profile. Use of a simple integrated Gaussian may lead to significant errors. The average interface positions in the compositional profiles are determined to standard uncertainties of 0.19 and 0.14 nm, respectively, using the integrated EMG function. Alternatively, and more simply, it is shown that interface positions and profiles may be deduced from data for several secondary ions with measured matrix factors by simply extrapolating the result to Ξ = 0. Care must be taken in quoting interface resolutions since those measured for predominantly Gaussian interfaces with Ξ above or below zero, without correction, appear significantly better than the true resolution.

Surface studies on uranium monocarbide using XPS and SIMS

International Nuclear Information System (INIS)

Asuvathraman, R.

1995-01-01

The air-exposed surfaces of sintered and arc-melted UC samples were examined by XPS and SIMS. XPS results indicate that the surface is covered with a very thin layer of UO 2 mixed with free carbon, which would have formed along with the oxide during the reaction between UC and oxygen or moisture. From the SIMS depth profile of oxygen, the thickness of the oxide layer is found to be approximately 10 nm. The SIMS oxygen images of the surface as a function of etching time reveal that the surface of UC consists of a top layer of adsorbed moisture/oxygen; this contamination layer is followed by a layer containing uranium oxide, uranium hydroxide and free carbon and then grain boundary oxide and finally bulk UC. The behaviour of sintered and arc-melted samples is similar. ((orig.))

Quantitative imaging of trace B in Si and SiO2 using ToF-SIMS

International Nuclear Information System (INIS)

Smentkowski, Vincent S.

2015-01-01

Changes in the oxidation state of an element can result in significant changes in the ionization efficiency and hence signal intensity during secondary ion mass spectrometry (SIMS) analysis; this is referred to as the SIMS matrix effect [Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, edited by R. G. Wilson, F. A. Stevie, and C. W. Magee (Wiley, New York, 1990)]. The SIMS matrix effect complicates quantitative analysis. Quantification of SIMS data requires the determination of relative sensitivity factors (RSFs), which can be used to convert the as measured intensity into concentration units [Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, edited by R. G. Wilson, F. A. Stevie, and C. W. Magee (Wiley, New York, 1990)]. In this manuscript, the authors report both: RSFs which were determined for quantification of B in Si and SiO 2 matrices using a dual beam time of flight secondary ion mass spectrometry (ToF-SIMS) instrument and the protocol they are using to provide quantitative ToF-SIMS images and line scan traces. The authors also compare RSF values that were determined using oxygen and Ar ion beams for erosion, discuss the problems that can be encountered when bulk calibration samples are used to determine RSFs, and remind the reader that errors in molecular details of the matrix (density, volume, etc.) that are used to convert from atoms/cm 3 to other concentration units will propagate into errors in the determined concentrations

Roughness development in the depth profiling with 500 eV O2+ beam with the combination of oxygen flooding and sample rotation

International Nuclear Information System (INIS)

Gui, D.; Xing, Z.X.; Huang, Y.H.; Mo, Z.Q.; Hua, Y.N.; Zhao, S.P.; Cha, L.Z.

2008-01-01

Roughness development is one of the most often addressed issues in the secondary ion mass spectrometry (SIMS) ultra-shallow depth profiling. The effect of oxygen flooding pressure on the roughness development has been investigated under the bombardment of 500 eV O 2 + beam with simultaneous sample rotation. Oxygen flooding had two competing effects on the surface roughening, i.e., enhancement of initiating roughening and suppression of roughening development, which were suggested to be described by the onset depth z on and transient width w tr of surface roughening. Both z on and w tr decreased as oxygen flooding pressure increased. As the result, surface roughening was most pronounced at the intermediate pressure from 4.4E-5 Pa to 5.8E-5 Pa. The surface roughening is negligible while without flooding or with flooding at the saturated pressure. No flooding is preferable for depth profiling ultra-shallow B implantation because of the better B profile shape and short analysis time

Analysis of impurities in semiconductor by IMA (SIMS)

International Nuclear Information System (INIS)

Komori, Junko; Masuko, Yoji; Koyama, Hiroshi

1988-01-01

The report outlines the measuring mechanism of SIMS and its applications in the field of semiconductor production. SIMS is the only equipment currently available for micrometer-order analysis and ppb-level impurities detection required for evaluation of semiconductors. In SIMS, sputtering of the sample surface is performed with primary ions and the secondary ions released from the sample are analyzed to identify the atomic species existing in the surface. The sputtering process and ionization process are outlined in the report, though the details of sputtering has not been fully clarified yet. In actual observation, some problems may be caused due to interfering ions and residual ions. In general, various ions including multi-valent ions, cluster ions, molecular ions, hydrogenated/oxygenated ions and hydrocarbon ions are produced in addition to monovalent ions to interfere the atoms under analysis. Interference by these ions can cause serious problems in carrying out depth profile analysis as well as observation of mass spectra. Major applications of SIMS in the field of semiconductor production include the evaluation of silicon surface, light elements, insulating materials and semiconductor devices. Some requirements to be met by further studies are also listed. (N.K.)

Deuterium depth profiling in JT-60U W-shaped divertor tiles by nuclear reaction analysis

International Nuclear Information System (INIS)

Hayashi, T.; Ochiai, K.; Masaki, K.; Gotoh, Y.; Kutsukake, C.; Arai, T.; Nishitani, T.; Miya, N.

2006-01-01

Deuterium concentrations and depth profiles in plasma-facing graphite tiles used in the divertor of JAERI Tokamak-60 Upgrade (JT-60U) were investigated by nuclear reaction analysis (NRA). The highest deuterium concentration of D/ 12 C of 0.053 was found in the outer dome wing tile, where the deuterium accumulated probably through the deuterium-carbon co-deposition. In the outer and inner divertor target tiles, the D/ 12 C data were lower than 0.006. Additionally, the maximum (H + D)/ 12 C in the dome top tile was estimated to be 0.023 from the results of NRA and secondary ion mass spectroscopy (SIMS). Orbit following Monte-Carlo (OFMC) simulation showed energetic deuterons caused by neutral beam injections (NBI) were implanted into the dome region with high heat flux. Furthermore, the surface temperature and conditions such as deposition and erosion significantly influenced the accumulation process of deuterium. The deuterium depth profile, scanning electron microscope (SEM) observation and OFMC simulation indicated the deuterium was considered to accumulate through three processes: the deuterium-carbon co-deposition, the implantation of energetic deuterons and the deuterium diffusion into the bulk

ONO structures investigated by SIMS, RBS, and NRA

International Nuclear Information System (INIS)

Iberl, F.; Ramm, P.; Lang, W.

1992-01-01

Reoxidized nitrided oxides (ONO) will be used in ULSI technology to improve the properties of thin gate dielectrics as high breakdown fields, radiation resistance, and diffusion barriers. The ONO structures analyzed in our study are fabricated in a rapid thermal processing reactor (RTP) using oxygen and ammonium ambients. Typical data for the sequential processing mode are: rapid thermal oxidation (RTO) in oxygen atmosphere at 1100degC and rapid thermal nitridation in ammonium atmosphere (RTN) at 1050degC followed by RTO at 1150degC. Due to the complexity of the growth process it is very important to verify the resulting layers with analytical methods. The whole structure is only about 250 A thick. To analyse the sequence, composition and thickness of the layers, the depth resolution of SIMS is necessary. On the other hand, for quantification, RBS and NRA can be used. When the bulk signal is suppressed by channelling, the signal of oxygen, and in special cases nitrogen, can be evaluated from the He + backscattering spectrum. For nuclear reaction analysis, the reactions of nitrogen with deuterium are used. The combination of SIMS and the accelerator techniques allow quantitative analysis and depth profiling of this structure. (orig.)

Junction depth measurement using carrier illumination

International Nuclear Information System (INIS)

Borden, Peter

2001-01-01

Carrier Illumination [trade mark] (CI) is a new method recently developed to meet the need for a non-destructive, high throughput junction depth measurement on patterned wafers. A laser beam creates a quasi-static excess carrier profile in the semiconductor underlying the activated junction. The excess carrier profile is fairly constant below the junction, and drops rapidly in the junction, creating a steep index of refraction gradient at the junction edge. Interference with light reflected from this index gradient provides a signal that is analyzed to determine the junction depth. The paper summarizes evaluation of performance in full NMOS and PMOS process flows, on both bare and patterned wafers. The aims have been to validate (1) performance in the presence of underlying layers typically found at the source/drain (S/D) process steps and (2) measurement on patterned wafers. Correlation of CI measurements to SIMS and transistor drive current are shown. The data were obtained from NMOS structures using As S/D and LDD implants. Correlations to SRP, SIMS and sheet resistance are shown for PMOS structures using B 11 LDD implants. Gage capability measurements are also presented

Sputtering as a means of depth profiling

International Nuclear Information System (INIS)

Whitton, J.L.

1978-01-01

Probably the most common technique for determination of depth profiles by sputtering is that of secondary ion mass spectrometry. Many problems occur in the important step of converting the time (of sputtering) scale to a depth scale and these problems arise before the secondary ions are ejected. An attempt is made to present a comprehensive list of the effects that should be taken into consideration in the use of sputtering as a means of depth profiling. The various parameters liable to affect the depth profile measurements are listed in four sections: beam conditions; target conditions; experimental environment; and beam-target interactions. The effects are discussed and where interplay occurs, cross-reference is made and examples are provided where possible. (B.R.H.)

SIMS studies of oxide growth on beta-NiAl

Science.gov (United States)

Mitchell, D. F.; Prescott, R.; Graham, M. J.; Doychak, J.

1992-01-01

This paper reports on a study of the growth of aluminum oxide on beta-NiAl at temperatures up to 1200 C. The scales have been formed in two-stage experiments using O2-16 and O2-18 gases, and the various isotopic species have been located by direct imaging using SIMS. Supplementary information on oxide morphologies and structures has been obtained by SEM. SIMS images and depth profiles indicate where oxidation has taken place predominantly by cation or anion diffusion at different stages of the growth process. The way in which the presence of small amounts of reactive elements can affect scale growth is also considered. These results help to provide an improved understanding of the mechanism of alumina scale formation, which is of benefit in the development of oxidation-resistant alloys and intermetallics for service at high temperatures.

Profile analysis of microparticles

International Nuclear Information System (INIS)

Konarski, P.; Iwanejko, I.; Mierzejewska, A.

2001-01-01

Depth resolved analyses of several types of microparticles are presented. Particles for secondary ion mass spectrometry (SIMS) depth profile analysis were collected in the working environment of glass plant, steelworks and welding station using eight-stage cascade impactor with particle size range of 0.3 μm to 15 μm. Ion beam sputtering and sample rotation technique allowed to describe morphology i.e. the elemental structure of collected sub-micrometer particles. Also model particles Iriodin 221 (Merck) were depth profiled. The core-shell structure is found for all types of investigated particles. Steelworks particles consist mainly of iron and manganese cores. At the shells of these microparticles: lead, chlorine and fluorine are found. The particles collected in the glass-works consist mainly of lead-zirconium glass cores covered by carbon and copper. Stainless-steel welding particles compose of iron, manganese and chromium cores covered by a shell rich in carbon, chlorine and fluorine. Sample rotation technique applied in SIMS appears to be an effective tool for environmental microparticle morphology studies

Analysis and imaging of biocidal agrochemicals using ToF-SIMS.

Science.gov (United States)

Converso, Valerio; Fearn, Sarah; Ware, Ecaterina; McPhail, David S; Flemming, Anthony J; Bundy, Jacob G

2017-09-06

ToF-SIMS has been increasingly widely used in recent years to look at biological matrices, in particular for biomedical research, although there is still a lot of development needed to maximise the value of this technique in the life sciences. The main issue for biological matrices is the complexity of the mass spectra and therefore the difficulty to specifically and precisely detect analytes in the biological sample. Here we evaluated the use of ToF-SIMS in the agrochemical field, which remains a largely unexplored area for this technique. We profiled a large number of biocidal active ingredients (herbicides, fungicides, and insecticides); we then selected fludioxonil, a halogenated fungicide, as a model compound for more detailed study, including the effect of co-occurring biomolecules on detection limits. There was a wide range of sensitivity of the ToF-SIMS for the different active ingredient compounds, but fludioxonil was readily detected in real-world samples (wheat seeds coated with a commercial formulation). Fludioxonil did not penetrate the seed to any great depth, but was largely restricted to a layer coating the seed surface. ToF-SIMS has clear potential as a tool for not only detecting biocides in biological samples, but also mapping their distribution.

Investigation of anodic TiO2 nanotube composition with high spatial resolution AES and ToF SIMS

Science.gov (United States)

Dronov, Alexey; Gavrilin, Ilya; Kirilenko, Elena; Dronova, Daria; Gavrilov, Sergey

2018-03-01

High resolution Scanning Auger Electron Spectroscopy (AES) and Time-of-Flight Secondary Ion Mass-Spectrometry (ToF SIMS) were used to investigate structure and elemental composition variation of both across an array of TiO2 nanotubes (NTs) and single tube of an array. The TiO2 NT array was grown by anodic oxidation of Ti foil in fluorine-containing ethylene glycol electrolyte. It was found that the studied anodic TiO2 nanotubes have a layered structure with rather sharp interfaces. The differences in AES depth profiling results of a single tube with the focused primary electron beam (point analysis) and over an area of 75 μm in diameter of a nanotube array with the defocused primary electron beam are discussed. Depth profiling by ToF SIMS was carried out over approximately the same size of a nanotube array to determine possible ionic fragments in the structure. The analysis results show that the combination of both mentioned methods is useful for a detailed analysis of nanostructures with complex morphology and multi-layered nature.

Film thickness determining method of the silicon isotope superlattices by SIMS

International Nuclear Information System (INIS)

Takano, Akio; Shimizu, Yasuo; Itoh, Kohei M.

2008-01-01

It is becoming important to evaluate silicon self-diffusion with progress of a silicon semiconductor industry. In order to evaluate the self-diffusion of silicon, silicon isotope superlattices (SLs) is the only marker. For this reason, it is important to correctly evaluate a film thickness and a depth distribution of isotope SLs by secondary ion mass spectrometry (SIMS). As for film thickness, it is difficult to estimate the thicknesses correctly if the cycles of SLs are short. In this work, first, we report the determination of the film thickness for short-period SLs using mixing roughness-information (MRI) analysis to SIMS profile. Next, the uncertainty of the conventional method to determine the film thicknesses of SLs is determined. It was found that the conventional methods cannot correctly determine film thickness of short-period-isotope SLs where film thickness differs for every layer

Development of Cold Neutron Depth Profiling System at HANARO

International Nuclear Information System (INIS)

Park, B. G.; Choi, H. D.; Sun, G. M.

2012-01-01

The depth profiles of intentional or intrinsic constituents of a sample provide valuable information for the characterization of materials. A number of analytical techniques for depth profiling have been developed. Neutron Depth Profiling (NDP) system which was developed by Ziegler et al. is one of the leading analytical techniques. In NDP, a thermal or cold neutron beam passes through a material and interacts with certain isotopes that are known to emit monoenergetic-charged particle remaining a recoil nucleus after neutron absorption. The depth is obtained from the energy loss of those charged particles escaping surface of substrate material. For various applications of NDP technique, the Cold Neutron Depth Profiling System (CN-NDP) was developed at a neutron guide CG1 installed at the HANARO cold neutron source. In this study the design features of the cold neutron beam and target chamber for the CN-NDP system are given. Also, some experiments for the performance tests of the CN-NDP system are described

Polarization Induced Changes in LSM Thin Film Electrode Composition Observed by In Operando Raman Spectroscopy and TOF-SIMS

DEFF Research Database (Denmark)

McIntyre, Melissa D.; Traulsen, Marie Lund; Norrman, Kion

2015-01-01

Polarization induced changes in LSM electrode composition were investigated by utilizing in operando Raman spectroscopy and post mortem TOF-SIMS depth profiling. Experiments were conducted on cells with 160 nm thick (La0.85Sr0.15)0.9MnO3±δ thin film electrodes in 10% O2 at 700 °C under various...

Investigations of corrosion phenomena on gold coins with SIMS

International Nuclear Information System (INIS)

Mayerhofer, K.E.; Piplits, K.; Traum, R.; Griesser, M.; Hutter, H.

2005-01-01

In order to establish a new handling procedure for contaminated coins, the Coin Cabinet and the Conservation Science Department of the Kunsthistorisches Museum, Vienna, initiated a research project on corrosion effects of gold coins. By now, investigations on historic and contemporary coins included optical microscopy, scanning electron microscopy (SEM), Auger electron microscopy (AES), X-ray photoelectron microscopy (XPS), and electrochemical methods showing the distribution of pollutants. This work focuses on secondary ion mass spectrometry (SIMS) investigations merely showing the distribution of electronegative elements, such as sulfur, oxygen, and chlorine on the surface. Sulfur is highly suspected of causing the observed corrosion phenomena, and is indeed enriched near polluting splints. Since SIMS is a destructive method, the investigated samples are test coins with intentionally added impurities. These coins were manufactured in cooperation with the Austrian Mint. They were treated with potassium polysulfide (K 2 S x ) for 8 h gaining a rapid corrosion of the surface. SIMS mass spectra, depth profiles, and images were done (a) at non-polluted areas (b) near polluted areas with slight coloring, and (c) directly at polluting stains showing enrichments of sulfur and chlorine. Due to the success of these investigations further studies on historic coins are intended

Depth profile measurement with lenslet images of the plenoptic camera

Science.gov (United States)

Yang, Peng; Wang, Zhaomin; Zhang, Wei; Zhao, Hongying; Qu, Weijuan; Zhao, Haimeng; Asundi, Anand; Yan, Lei

2018-03-01

An approach for carrying out depth profile measurement of an object with the plenoptic camera is proposed. A single plenoptic image consists of multiple lenslet images. To begin with, these images are processed directly with a refocusing technique to obtain the depth map, which does not need to align and decode the plenoptic image. Then, a linear depth calibration is applied based on the optical structure of the plenoptic camera for depth profile reconstruction. One significant improvement of the proposed method concerns the resolution of the depth map. Unlike the traditional method, our resolution is not limited by the number of microlenses inside the camera, and the depth map can be globally optimized. We validated the method with experiments on depth map reconstruction, depth calibration, and depth profile measurement, with the results indicating that the proposed approach is both efficient and accurate.

Shallow surface depth profiling with atomic resolution

International Nuclear Information System (INIS)

Xi, J.; Dastoor, P.C.; King, B.V.; O'Connor, D.J.

1999-01-01

It is possible to derive atomic layer-by-layer composition depth profiles from popular electron spectroscopic techniques, such as X-ray photoelectron spectroscopy (XPS) or Auger electron spectroscopy (AES). When ion sputtering assisted AES or XPS is used, the changes that occur during the establishment of the steady state in the sputtering process make these techniques increasingly inaccurate for depths less than 3nm. Therefore non-destructive techniques of angle-resolved XPS (ARXPS) or AES (ARAES) have to be used in this case. In this paper several data processing algorithms have been used to extract the atomic resolved depth profiles of a shallow surface (down to 1nm) from ARXPS and ARAES data

Using elastic peak electron spectroscopy for enhanced depth resolution in sputter profiling

International Nuclear Information System (INIS)

Hofmann, S.; Kesler, V.

2002-01-01

Elastic peak electron spectroscopy (EPES) is an alternative to AES in sputter depth profiling of thin film structures. In contrast to AES, EPES depth profiling is not influenced by chemical effects. The high count rate ensures a good signal to noise ratio, that is lower measurement times and/or higher precision. In addition, because of the elastically scattered electrons travel twice through the sample, the effective escape depth is reduced, an important factor for the depth resolution function. Thus, the depth resolution is increased. EPES depth profiling was successfully applied to a Ge/Si multilayer structure. For an elastic peak energy of 1.0 keV the information depth is considerably lower (0.8 nm) as compared to the Ge (LMM, 1147 eV) peak (1.6 nm) used in AES depth profiling, resulting in a respectively improved depth resolution for EPES profiling under otherwise similar profiling conditions. EPES depth profiling is successfully applied to measure small diffusion lengths at Ge/Si interfaces of the order of 1 nm. (Authors)

A new method for depth profiling

International Nuclear Information System (INIS)

Chittleborough, C.W.; Chaudhri, M.A.; Rouse, J.L.

1978-01-01

A simple method for obtaining depth profiles of concentrations has been developed for charged particle induced nuclear reactions which produce γ-rays or neutrons. This method is particularly suitable for non-resonant reactions but is also applicable to resonant reactions and can examine the concentration of the sought nuclide throughout the entire activation depth of the incoming particles in the matrix

Quantitative damage depth profiles in arsenic implanted HgCdTe

Energy Technology Data Exchange (ETDEWEB)

Lobre, C., E-mail: clement.lobre@cea.fr [CEA-Leti, MINATEC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Jalabert, D. [CEA-INAC/UJF-Grenoble 1 UMR-E, MINATEC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Vickridge, I.; Briand, E.; Benzeggouta, D. [Institut des NanoSciences de Paris, UMR 7588 du CNRS, Universite de Pierre et Marie Curie, Paris (France); Mollard, L. [CEA-Leti, MINATEC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Jouneau, P.H. [CEA-INAC/UJF-Grenoble 1 UMR-E, MINATEC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Ballet, P. [CEA-Leti, MINATEC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France)

2013-10-15

Rutherford backscattering experiments under channeling conditions (RBS-c) have been carried out on Hg{sub 0.77}Cd{sub 0.23}Te (MCT) layers implanted with arsenic. Accurate damage profiles have been extracted through a simple formalism for implanted and annealed layers. Quantitative damage profiles are correlated with structural defects observed by bright-field scanning transmission electron microscopy (BF-STEM) and chemical composition measured by secondary ion mass spectrometry (SIMS). Evolution of damage for increasing ion implantation fluence has been investigated by these three complementary techniques. Evidence is found of irradiation induced annealing during implantation. A fast damage recovery has been observed for post-implantation thermal anneals. In the case of an implanted layer annealed during 1 h, the damage profile, associated with arsenic concentration measurements, indicates the presence of complexes involving arsenic.

Quantitative damage depth profiles in arsenic implanted HgCdTe

International Nuclear Information System (INIS)

Lobre, C.; Jalabert, D.; Vickridge, I.; Briand, E.; Benzeggouta, D.; Mollard, L.; Jouneau, P.H.; Ballet, P.

2013-01-01

Rutherford backscattering experiments under channeling conditions (RBS-c) have been carried out on Hg 0.77 Cd 0.23 Te (MCT) layers implanted with arsenic. Accurate damage profiles have been extracted through a simple formalism for implanted and annealed layers. Quantitative damage profiles are correlated with structural defects observed by bright-field scanning transmission electron microscopy (BF-STEM) and chemical composition measured by secondary ion mass spectrometry (SIMS). Evolution of damage for increasing ion implantation fluence has been investigated by these three complementary techniques. Evidence is found of irradiation induced annealing during implantation. A fast damage recovery has been observed for post-implantation thermal anneals. In the case of an implanted layer annealed during 1 h, the damage profile, associated with arsenic concentration measurements, indicates the presence of complexes involving arsenic

Depth-profiling using X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Pijolat, M.; Hollinger, G.

1980-12-01

The possibilities of X-ray photoelectron spectroscopy (or ESCA) for depth-profiling into shallow depths (approximately 10-100 A) have been studied. The method of ion-sputtering removal has first been investigated in order to improve its depth-resolution (approximately 50-150 A). A procedure which eliminates the effects due to the resolution function of the instrumental probe (analysed depth approximately 50 A) has been settled; but it is not yet sufficient, and the sputter - broadening due to the ion-induced damages must be taken into account (broadening function approximately 50 A for approximately 150 A removal). Because of serious difficulties in estimating the broadening function an alternative is to develop non destructive methods, so a new method based on the dependence of the analysed depth with the electron emission angle is presented. The extraction of the concentration profile from angular distribution experiments is achieved, in the framework of a flat-layer model, by minimizing the difference between theoretical and experimental relative intensities. The applicability and limitations of the method are discussed on the basis of computer simulation results. The depth probed is of the order of 3 lambda (lambda being the value of the inelastic mean free path, typically 10-20 A) and the depth-resolution is of the order of lambda/3 [fr

Wind profiler mixing depth and entrainment measurements with chemical applications

Energy Technology Data Exchange (ETDEWEB)

Angevine, W.M.; Trainer, M.; Parrish, D.D.; Buhr, M.P.; Fehsenfeld, F.C. [NOAA Aeronomy Lab., Boulder, CO (United States); Kok, G.L. [NCAR Research Aviation Facility, Boulder, CO (United States)

1994-12-31

Wind profiling radars operating at 915 MHz have been present at a number of regional air quality studies. The profilers can provide a continuous, accurate record of the depth of the convective mixed layer with good time resolution. Profilers also provide information about entrainment at the boundary layer top. Mixing depth data from several days of the Rural Oxidants in the Southern Environment II (ROSE II) study in Alabama in June, 1992 are presented. For several cases, chemical measurements from aircraft and ground-based instruments are shown to correspond to mixing depth and entrainment zone behavior observed by the profiler.

Photodegradation of wood and depth profile analysis

International Nuclear Information System (INIS)

Kataoka, Y.

2008-01-01

Photochemical degradation is a key process of the weathering that occurs when wood is exposed outdoors. It is also a major cause of the discoloration of wood in indoor applications. The effects of sunlight on the chemical composition of wood are superficial in nature, but estimates of the depth at which photodegradation occurs in wood vary greatly from 80 microm to as much as 2540 mic rom. Better understanding of the photodegradation of wood through depth profile analysis is desirable because it would allow the development of more effective photo-protective treatments that target the surface layers of wood most susceptible to photodegradation. This paper briefly describes fundamental aspects of photodegradation of wood and reviews progress made in the field of depth profile study on the photodegradation of wood. (author)

Depth profiling of extended defects in silicon by Rutherford backscattering measurements

International Nuclear Information System (INIS)

Gruska, B.; Goetz, G.

1981-01-01

Depth profiling of dislocations and stacking faults is carried out by analyzing axial and planar channeling data from As + -and P + -implanted silicon samples annealed at high temperatures. The analyzing procedure is based on the simple two-beam model. The results show that depth profiling of dislocations using planar channeling data is connected with a broadening of the real distributions. A degradation of the defect concentration and a deformation of the profile result for very high defect concentrations (> 5 x 10 5 cm/cm 2 ). All these effects can be neglected by analyzing axial channeling data. Depth profiling of stacking faults is restricted to the determination of the depth distribution of displaced atomic rows or planes. For both the procedures, axial as well as planar channeling measurements, the same depth profiles of displaced atomic rows are obtained. (author)

PLA-PMMA blends: A study by XPS and ToF-SIMS

International Nuclear Information System (INIS)

Cossement, D.; Gouttebaron, R.; Cornet, V.; Viville, P.; Hecq, M.; Lazzaroni, R.

2006-01-01

This paper reports which are the possibilities of quantification by time of flight secondary ion mass spectrometry (ToF-SIMS) for some polymer blends. In order to assess the composition of the mixtures, we studied first different poly(L-lactide)/polymethylmethacrylate (PLA/PMMA) blends by X-ray photoelectron spectroscopy (XPS), this technique being quantitative. By XPS fitting of the C 1s level, we found a very good agreement of the measured concentrations with the initial compositions. Concerning ToF-SIMS data treatment, we used principal component analysis (PCA) on negative spectra allowing to discriminate one polymer from the other one. By partial least square regression (PLS), we found also a good agreement between the ToF-SIMS predicted and initial compositions. This shows that ToF-SIMS, in a similar way to XPS, can lead to quantitative results. In addition, the observed agreement between XPS (60-100 A depth analyzed) and ToF-SIMS (10 A depth analyzed) measurements show that there is no segregation of one of the two polymers onto the surface

Development of nanotopography during SIMS characterization of thin films of Ge{sub 1−x}Sn{sub x} alloy

Energy Technology Data Exchange (ETDEWEB)

Secchi, M., E-mail: secchi@fbk.eu [Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, TN (Italy); Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Demenev, E. [Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, TN (Italy); Department of Molecular Science and Nanosystems, Ca’Foscari University, Dorsoduro 2137, 30123 Venice (Italy); Colaux, J.L. [Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, Surrey, England (United Kingdom); Giubertoni, D.; Dell’Anna, R.; Iacob, E. [Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, TN (Italy); Gwilliam, R.M.; Jeynes, C. [Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, Surrey, England (United Kingdom); Bersani, M. [Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, TN (Italy)

2015-11-30

Highlights: • SIMS protocol to measure high Sn concentration in GeSn alloy is proposed. • Cs{sup +} as incidence beam, collecting positive ions MCs{sup +} was the chosen configuration. • Applied sputtering conditions induced an early formation of surface topography. • Unusual dot and ripple evolution at oblique incidence angle on Ge were studied. • Two different mechanisms seem to be involved: ripple formation and nanovoids in Ge. - Abstract: This work presents a study of application of secondary ion mass spectrometry (SIMS) to measure tin concentration in Ge{sub 1−x}Sn{sub x} alloy with x higher than solid solubility ∼1%, i.e. well above the diluted regime where SIMS measurements usually provide the most reliable quantitative results. SIMS analysis was performed on Sn{sup +} ion implanted Ge films, epitaxially deposited on Si, and on chemical vapor deposition deposited Ge{sub 0.93}Sn{sub 0.07} alloy. Three SIMS conditions were investigated, varying primary beam ion species and secondary ion polarity keeping 1 keV impact energy. Best depth profile accuracy, best agreement with the fluences measured by Rutherford backscattering spectrometry, good detection limit (∼1 × 10{sup 17} at/cm{sup 3}) and depth resolution (∼2 nm/decade) are achieved in Cs{sup +}/SnCs{sup +} configuration. However, applied sputtering conditions (Cs{sup +} 1 keV, 64° incidence vs. normal) induced an early formation of surface topography on the crater bottom resulting in significant variation of sputtering yield. Atomic force microscopy shows a peculiar topography developed on Ge: for oblique incidence, a topography consisting in a sequence of dots and ripples was observed on the crater bottom. This behavior is unusual for grazing incidence and has been observed to increase with the Cs{sup +} fluence. Rotating sample during sputtering prevents this ripple formation and consequently improves the depth accuracy.

The role of the transcription factor SIM2 in prostate cancer.

Directory of Open Access Journals (Sweden)

Bin Lu

Full Text Available Recent reports have suggested a possible involvement of Single-minded homolog 2 (SIM2 in human solid cancers, including prostate cancer. However, the exact role of SIM2 in cancer in general, and in prostate cancer in particular, remains largely unknown. This study was designed to elucidate the role of SIM2 in prostate cancer using a shRNA-based approach in the PC3 prostate cancer cell line.Lentiviral shRNAs were used to inhibit SIM2 gene and protein levels in PC3 cells. Quantitative RT-PCR and branched DNA were performed to evaluate transcript expression. SIM2 protein expression level was measured by western blot. Profiling of gene expression spanning the whole genome, as well as polar metabolomics of several major metabolic pathways was performed to identify major pathway dysregulations.SIM2 gene and protein products were significantly downregulated by lenti-shRNA in PC3 cell line. This low expression of SIM2 affected gene expression profile, revealing significant changes in major signaling pathways, networks and functions. In addition, major metabolic pathways were affected.Taken together, our results suggest an involvement of SIM2 in key traits of prostate tumor cell biology and might underlie a contribution of this transcription factor to prostate cancer onset and progression.

Development and Applications of Time of Flight Neutron Depth Profiling

International Nuclear Information System (INIS)

Cady, Bingham; Unlu, Kenan

2005-01-01

The depth profiles of intentional or intrinsic constituents of a sample provide valuable information for the characterization of materials. For example, the subtle differences in spatial distribution and composition of many chemical species in the near surface region and across interfacial boundaries can significantly alter the electronic and optical properties of materials. A number of analytical techniques for depth profiling have been developed during the last two decades. neutron Depth Profiling (NDP) is one of the leading analytical techniques. The NDP is a nondestructive near surface technique that utilizes thermal/cold neutron beam to measure the concentration of specific light elements versus their depth in materials. The depth is obtained from the energy loss of protons, alphas or recoil atoms in substrate materials. Since the charged particle energy determination using surface barrier detector is used for NDP, the depth resolution is highly dependent on the detectors an d detection instruments. The depth resolutions of a few tens of nm are achieved with available NDP facilities in the world. However, the performance of NDP needs to be improved in order to obtain a few A depth resolutions

An optical fiber expendable seawater temperature/depth profile sensor

Science.gov (United States)

Zhao, Qiang; Chen, Shizhe; Zhang, Keke; Yan, Xingkui; Yang, Xianglong; Bai, Xuejiao; Liu, Shixuan

2017-10-01

Marine expendable temperature/depth profiler (XBT) is a disposable measuring instrument which can obtain temperature/depth profile data quickly in large area waters and mainly used for marine surveys, scientific research, military application. The temperature measuring device is a thermistor in the conventional XBT probe (CXBT)and the depth data is only a calculated value by speed and time depth calculation formula which is not an accurate measurement result. Firstly, an optical fiber expendable temperature/depth sensor based on the FBG-LPG cascaded structure is proposed to solve the problems of the CXBT, namely the use of LPG and FBG were used to detect the water temperature and depth, respectively. Secondly, the fiber end reflective mirror is used to simplify optical cascade structure and optimize the system performance. Finally, the optical path is designed and optimized using the reflective optical fiber end mirror. The experimental results show that the sensitivity of temperature and depth sensing based on FBG-LPG cascade structure is about 0.0030C and 0.1%F.S. respectively, which can meet the requirements of the sea water temperature/depth observation. The reflectivity of reflection mirror is in the range from 48.8% to 72.5%, the resonant peak of FBG and LPG are reasonable and the whole spectrum are suitable for demodulation. Through research on the optical fiber XBT (FXBT), the direct measurement of deep-sea temperature/depth profile data can be obtained simultaneously, quickly and accurately. The FXBT is a new all-optical seawater temperature/depth sensor, which has important academic value and broad application prospect and is expected to replace the CXBT in the future.

PIXE depth profiling using variation of detection angle

International Nuclear Information System (INIS)

Miranda, J.; Rickards, J.; Trejo-Luna, R.

2006-01-01

A method to apply particle induced X-ray emission (PIXE) for depth profiling, based on the variation of the X-ray detection angle, is proposed. The procedure uses X-ray yields normalized to those emitted at a particular reference angle. Application of the method to implanted samples and thin metallic films gave excellent results regarding the range of implanted ions and film thickness, respectively. However, there is no complete information about the width of the distribution of the implanted ions, emphasizing the need to develop a full mathematical algorithm to obtain the general depth profile

Transient effects in SIMS analysis of Si with Cs sup + at high incidence angles Secondary ion yield variations

CERN Document Server

Heide, P A W

2002-01-01

Secondary ion mass spectrometry (SIMS) depth profile analysis of Si wafers using 1 keV Cs sup + primary ions at large incidence angles (80 deg. ) is plagued by unusually strong transient effects (variations in both sputter and ion yields). Analysis of a native oxide terminated Si wafer with and without the aid of an O sub 2 leak, and an Ar sup + pre-sputtered wafer revealed correlations between the implanted Cs content and various secondary ion intensities consistent with that expected from a resonance charge transfer process (that assumed by the electron tunneling model). Cs concentrations were defined through X-ray photoelectron spectroscopy of the sputtered surface from SIMS profiles terminated within the transient region. These scaled with the surface roughening occurring under these conditions and can be explained as resulting from the associated drop in sputter rates. An O induced transient effect from the native oxide was also identified. Characterization of these effects allowed the reconstruction of ...

Field burial results and SIMS analysis of the Chalk River glass blocks

International Nuclear Information System (INIS)

Tait, J.C.; Hocking, W.H.; Betteridge, J.S.; Bart, G.

1986-01-01

In 1959, 25 2-kg hemispherical blocks of aluminosilicate glass, each containing ∼90 MBq/g of mixed fission products, were buried in a sandy soil aquifer in the waste management area at the Chalk River Nuclear Laboratories. A second set of blocks, containing ∼260 MBq/g mixed fission products, was buried in 1960. One block from each test was retrieved in 1978 to undergo chemical and surface analysis. This report reviews the migration of the 90 Sr and 137 Cs plume in the soil and presents the results of SIMS depth profiling of the surface of a glass block. (author)

Multi-dimensional TOF-SIMS analysis for effective profiling of disease-related ions from the tissue surface.

Science.gov (United States)

Park, Ji-Won; Jeong, Hyobin; Kang, Byeongsoo; Kim, Su Jin; Park, Sang Yoon; Kang, Sokbom; Kim, Hark Kyun; Choi, Joon Sig; Hwang, Daehee; Lee, Tae Geol

2015-06-05

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) emerges as a promising tool to identify the ions (small molecules) indicative of disease states from the surface of patient tissues. In TOF-SIMS analysis, an enhanced ionization of surface molecules is critical to increase the number of detected ions. Several methods have been developed to enhance ionization capability. However, how these methods improve identification of disease-related ions has not been systematically explored. Here, we present a multi-dimensional SIMS (MD-SIMS) that combines conventional TOF-SIMS and metal-assisted SIMS (MetA-SIMS). Using this approach, we analyzed cancer and adjacent normal tissues first by TOF-SIMS and subsequently by MetA-SIMS. In total, TOF- and MetA-SIMS detected 632 and 959 ions, respectively. Among them, 426 were commonly detected by both methods, while 206 and 533 were detected uniquely by TOF- and MetA-SIMS, respectively. Of the 426 commonly detected ions, 250 increased in their intensities by MetA-SIMS, whereas 176 decreased. The integrated analysis of the ions detected by the two methods resulted in an increased number of discriminatory ions leading to an enhanced separation between cancer and normal tissues. Therefore, the results show that MD-SIMS can be a useful approach to provide a comprehensive list of discriminatory ions indicative of disease states.

Combined evaluation of grazing incidence X-ray fluorescence and X-ray reflectivity data for improved profiling of ultra-shallow depth distributions

Energy Technology Data Exchange (ETDEWEB)

Ingerle, D., E-mail: dingerle@ati.ac.at [Atominstitut, Vienna University of Technology, Stadionallee 2, A-1020 Vienna (Austria); Meirer, F. [Inorganic Chemistry and Catalysis, Debye Institute for Nanomaterials Science, Utrecht University, Universiteitsweg 99, 3584 CG Utrecht (Netherlands); Pepponi, G.; Demenev, E.; Giubertoni, D. [MiNALab, CMM-irst, Fondazione Bruno Kessler, Via Sommarive 18, I-38050 Povo (Italy); Wobrauschek, P.; Streli, C. [Atominstitut, Vienna University of Technology, Stadionallee 2, A-1020 Vienna (Austria)

2014-09-01

elements with drastically increased confidence level. Silicon wafers implanted with Arsenic at different implantation energies were measured by XRR and GIXRF using a combined, simultaneous measurement and data evaluation procedure. The data were processed using a self-developed software package (JGIXA), designed for simultaneous fitting of GIXRF and XRR data. The results were compared with depth profiles obtained by Secondary Ion Mass Spectrometry (SIMS). - Highlights: • The parameter optimization by curve fitting uses differential evolution (an evolutionary algorithm). • Implantation profiles are modeled by using the Pearson distribution system. • The implant distribution profile is discretized to allow calculation similar to a layered sample. • Total implanted dose, implantation depth and profile shape can be determined nondestructively.

Applications of positron depth profiling

Energy Technology Data Exchange (ETDEWEB)

Hakvoort, R A

1993-12-23

In this thesis some contributions of the positron-depth profiling technique to materials science have been described. Following studies are carried out: Positron-annihilation measurements on neon-implanted steel; Void creation in silicon by helium implantation; Density of vacancy-type defects present in amorphous silicon prepared by ion implantation; Measurements of other types of amorphous silicon; Epitaxial cobalt disilicide prepared by cobalt outdiffusion. Positron-annihilation experiments on low-pressure CVD silicon-nitride films. (orig./MM).

Applications of positron depth profiling

International Nuclear Information System (INIS)

Hakvoort, R.A.

1993-01-01

In this thesis some contributions of the positron-depth profiling technique to materials science have been described. Following studies are carried out: Positron-annihilation measurements on neon-implanted steel; Void creation in silicon by helium implantation; Density of vacancy-type defects present in amorphous silicon prepared by ion implantation; Measurements of other types of amorphous silicon; Epitaxial cobalt disilicide prepared by cobalt outdiffusion. Positron-annihilation experiments on low-pressure CVD silicon-nitride films. (orig./MM)

Depth profiling of tritium by neutron time-of-flight

International Nuclear Information System (INIS)

Davis, J.C.; Anderson, J.D.; Lefevre, H.W.

1976-01-01

A method to measure the depth profile of tritium implanted or absorbed in materials was developed. The sample to be analyzed is bombarded with a pulsed proton beam and the energy of neutrons produced by the T(p,n) reaction is measured by the time-of-flight technique. From the neutron energy the depth in the target of the T atoms may be inferred. A sensitivity of 0.1 at. percent T or greater is possible. The technique is non-destructive and may be used with thick or radioactive host materials. Samples up to 20 μm in thickness may be profiled with resolution limited by straggling of the proton beam for depths greater than 1 μm. Deuterium depth profiling has been demonstrated using the D(d,n) reaction. The technique has been used to observe the behavior of an implantation spike of T produced by a 400 keV T + beam stopping at a depth of 3 μm in 11 μm thick layers of Ti and TiH. The presence of H in the Ti lattice is observed to inhibit the diffusion of T through the lattice. Effects of the total hydrogen concentration (H + T) being forced above stochiometry at the implantation site are suggested by the shapes of the implantation spikes

Depth profile analysis of polymerized fluorine compound on photo-resist film with angle-resolved XPS

International Nuclear Information System (INIS)

Iijima, Yoshitoki; Kubota, Toshio; Oinaka, Syuhei

2013-01-01

Angle-resolved XPS (ARXPS) is an observation technique which is very effective in chemical depth analysis method less than photoelectron detected depth. For the analysis of depth profile, several analysis methods have been proposed to calculate the depth profile using the ARXPS method. The present report is the measurements of depth profile of the fluorine in a fluorine-containing photo-resist film using the ARXPS method and the depth profile of concentration have been successfully determined using the ARCtick 1.0 software. It has been observed that thickness of the fluorocarbon enriched surface layer of the photo-resist was 2.7 nm, and so that the convert of the ARXPS data from the angle profile to the depth profile was proved to be useful analysis method for the ultrathin layer depth. (author)

Hydrogen depth profiling using elastic recoil detection

International Nuclear Information System (INIS)

Doyle, B.L.; Peercy, P.S.

1979-01-01

The elastic recoil detection (ERD) analysis technique for H profiling in the near surface regions of solids is described. ERD is shown to have the capability of detecting H and its isotopes down to concentrations of approx. 0.01 at. % with a depth resolution of a few hundred angstroms. Is is demonstrated that 2.4-MeV He ions can be used successfully to profile 1 H and 2 D using this technique. 12 figures

Genetic Algorithm for Opto-thermal Skin Hydration Depth Profiling Measurements

Science.gov (United States)

Cui, Y.; Xiao, Perry; Imhof, R. E.

2013-09-01

Stratum corneum is the outermost skin layer, and the water content in stratum corneum plays a key role in skin cosmetic properties as well as skin barrier functions. However, to measure the water content, especially the water concentration depth profile, within stratum corneum is very difficult. Opto-thermal emission radiometry, or OTTER, is a promising technique that can be used for such measurements. In this paper, a study on stratum corneum hydration depth profiling by using a genetic algorithm (GA) is presented. The pros and cons of a GA compared against other inverse algorithms such as neural networks, maximum entropy, conjugate gradient, and singular value decomposition will be discussed first. Then, it will be shown how to use existing knowledge to optimize a GA for analyzing the opto-thermal signals. Finally, these latest GA results on hydration depth profiling of stratum corneum under different conditions, as well as on the penetration profiles of externally applied solvents, will be shown.

Development of a software system for spatial resolved trace analysis of high performance materials with SIMS

International Nuclear Information System (INIS)

Brunner, Ch. H.

1997-09-01

The following work is separated into two distinctly different parts. The first one is dealing with the SIMSScan software project, an application system for secondary ion mass spectrometry. This application system primarily lays down the foundation, for the research activity introduced in the second part of this work. SIMSScan is an application system designed to provide data acquisition routines for different requirements in the field of secondary ion mass spectroscopy. The whole application package is divided into three major sections, each one dealing with specific measurement tasks. Various supporting clients and wizards, providing extended functionality to the main application, build the core of the software. The MassScan as well as the DepthScan module incorporate the SIMS in the direct imaging or stigmatic mode and are featuring the capabilities for mass spectra recording or depth profile analysis. In combination with an image recording facility the DepthScan module features the capability of spatial resolved material analysis - 3D SIMS. The RasterScan module incorporates the SIMS in scanning mode and supports an fiber optical link for optimized data transfer. The primary goal of this work is to introduce the basic ideas behind the implementation of the main application modules and the supporting clients. Furthermore, it is the intention to lay down the foundation for further developments. At the beginning a short introduction into the paradigm of object oriented programming as well as Windows TM programming is given. Besides explaining the basic ideas behind the Doc/View application architecture the focus is mainly shifted to the routines controlling the SIMS hardware and the basic concepts of multithreaded programming. The elementary structures of the view and document objects is discussed in detail only for the MassScan module, because the ideas behind data abstraction and encapsulation are quite similar. The second part introduces the research activities

Hardness depth profiling of case hardened steels using a three-dimensional photothermal technique

International Nuclear Information System (INIS)

Qu Hong; Wang Chinhua; Guo Xinxin; Mandelis, Andreas

2010-01-01

A method of retrieving thermophysical depth profiles of continuously inhomogeneous materials is presented both theoretically and experimentally using the three-dimensional (3-D) photothermal radiometry. A 3-D theoretical model suitable for characterizing solids with arbitrary continuously varying thermophysical property depth profiles and finite (collimated or focused) laser beam spotsize is developed. A numerical fitting algorithm to retrieve the thermophysical profile was demonstrated with three case hardened steel samples. The reconstructed thermal conductivity depth profiles were found to be well anti-correlated with microhardness profiles obtained with the conventional indenter method.

Depth profiling of helium in Ni and Nb; comparison of different methods

International Nuclear Information System (INIS)

Scherzer, B.M.U.; Bay, H.L.; Behrisch, R.; Boergesen, P.; Roth, J.

1978-01-01

Depth profiles of 30 keV 3 He + and 4 He + implanted in polycrystalline nickel and single crystal niobium have been measured using the nuclear reactions He(p,p)He and 3 He(d,α) 1 H. The formalism for obtaining depth profiles from Rutherford backscattering spectra has been generalized for the application to nuclear reaction spectra. The profiles obtained by the two different methods agree within the errors introduced by the uncertainties of the reaction cross-section and electronic stopping power data. The 3 He(d,α) 1 H method is a factor of 10-100 more sensitive and has about a factor of 5 better depth resolution than the He(p,p)He method. However, the latter method allows to probe much larger depths and is simultaneously applicable to 4 He as well as to 3 He. Within the experimental uncertainties the depth profiles for 3 He and 4 He are identical. (Auth.)

Look@NanoSIMS--a tool for the analysis of nanoSIMS data in environmental microbiology.

Science.gov (United States)

Polerecky, Lubos; Adam, Birgit; Milucka, Jana; Musat, Niculina; Vagner, Tomas; Kuypers, Marcel M M

2012-04-01

We describe an open-source freeware programme for high throughput analysis of nanoSIMS (nanometre-scale secondary ion mass spectrometry) data. The programme implements basic data processing and analytical functions, including display and drift-corrected accumulation of scanned planes, interactive and semi-automated definition of regions of interest (ROIs), and export of the ROIs' elemental and isotopic composition in graphical and text-based formats. Additionally, the programme offers new functions that were custom-designed to address the needs of environmental microbiologists. Specifically, it allows manual and automated classification of ROIs based on the information that is derived either from the nanoSIMS dataset itself (e.g. from labelling achieved by halogen in situ hybridization) or is provided externally (e.g. as a fluorescence in situ hybridization image). Moreover, by implementing post-processing routines coupled to built-in statistical tools, the programme allows rapid synthesis and comparative analysis of results from many different datasets. After validation of the programme, we illustrate how these new processing and analytical functions increase flexibility, efficiency and depth of the nanoSIMS data analysis. Through its custom-made and open-source design, the programme provides an efficient, reliable and easily expandable tool that can help a growing community of environmental microbiologists and researchers from other disciplines process and analyse their nanoSIMS data. © 2012 Society for Applied Microbiology and Blackwell Publishing Ltd.

The deconvolution of sputter-etching surface concentration measurements to determine impurity depth profiles

International Nuclear Information System (INIS)

Carter, G.; Katardjiev, I.V.; Nobes, M.J.

1989-01-01

The quasi-linear partial differential continuity equations that describe the evolution of the depth profiles and surface concentrations of marker atoms in kinematically equivalent systems undergoing sputtering, ion collection and atomic mixing are solved using the method of characteristics. It is shown how atomic mixing probabilities can be deduced from measurements of ion collection depth profiles with increasing ion fluence, and how this information can be used to predict surface concentration evolution. Even with this information, however, it is shown that it is not possible to deconvolute directly the surface concentration measurements to provide initial depth profiles, except when only ion collection and sputtering from the surface layer alone occur. It is demonstrated further that optimal recovery of initial concentration depth profiles could be ensured if the concentration-measuring analytical probe preferentially sampled depths near and at the maximum depth of bombardment-induced perturbations. (author)

Visualizing Antimicrobials in Bacterial Biofilms: Three-Dimensional Biochemical Imaging Using TOF-SIMS.

Science.gov (United States)

Davies, Sarah K; Fearn, Sarah; Allsopp, Luke P; Harrison, Freya; Ware, Ecaterina; Diggle, Stephen P; Filloux, Alain; McPhail, David S; Bundy, Jacob G

2017-01-01

Bacterial biofilms are groups of bacteria that exist within a self-produced extracellular matrix, adhering to each other and usually to a surface. They grow on medical equipment and inserts such as catheters and are responsible for many persistent infections throughout the body, as they can have high resistance to many antimicrobials. Pseudomonas aeruginosa is an opportunistic pathogen that can cause both acute and chronic infections and is used as a model for research into biofilms. Direct biochemical methods of imaging of molecules in bacterial biofilms are of high value in gaining a better understanding of the fundamental biology of biofilms and biochemical gradients within them. Time of flight-secondary-ion mass spectrometry (TOF-SIMS) is one approach, which combines relatively high spatial resolution and sensitivity and can perform depth profiling analysis. It has been used to analyze bacterial biofilms but has not yet been used to study the distribution of antimicrobials (including antibiotics and the antimicrobial metal gallium) within biofilms. Here we compared two methods of imaging of the interior structure of P. aeruginosa in biological samples using TOF-SIMS, looking at both antimicrobials and endogenous biochemicals: cryosectioning of tissue samples and depth profiling to give pseudo-three-dimensional (pseudo-3D) images. The sample types included both simple biofilms grown on glass slides and bacteria growing in tissues in an ex vivo pig lung model. The two techniques for the 3D imaging of biofilms are potentially valuable complementary tools for analyzing bacterial infection. IMPORTANCE Modern analytical techniques are becoming increasingly important in the life sciences; imaging mass spectrometry offers the opportunity to gain unprecedented amounts of information on the distribution of chemicals in samples-both xenobiotics and endogenous compounds. In particular, simultaneous imaging of antibiotics (and other antimicrobial compounds) and bacterium

Secondary ion mass spectrometry induced damage adjacent to analysis craters in silicon

International Nuclear Information System (INIS)

Clark, M.H.; Jones, K.S.; Stevie, F.A.

2002-01-01

Damage introduced by dynamic secondary ion mass spectrometry (SIMS) depth profiling is studied. A silicon sample with a boron marker layer was depth profiled by dynamic SIMS. After subsequent annealing at 750 deg. C for 30 min, the SIMS sample was reanalyzed by plan-view transmission electron microscope (PTEM) and SIMS. PTEM images showed the presence of interstitial defects near the original SIMS crater, and SIMS depth profiles of similar regions exhibited boron diffusivity enhancements. Excess interstitials were introduced into the Si surface up to 2 mm from the original 225 μmx225 μm crater. Both PTEM and SIMS results showed that the damage and its effects diminished with an increase in distance from the original crater

Atom and carrier depth distributions for 300 keV arsenic channeled in the of silicon as a function of alignment angle and ion fluence

International Nuclear Information System (INIS)

Wilson, R.G.

1980-01-01

Depth distributions of As atoms measured by SIMS, and of associated carriers measured by differential C-V, both give a measured most probable channeling range Rsub(c) of 3.35 to 3.40 μm for 300 keV As ions implanted in the of Si, aligned within approximately 0.05 deg (proper or axial channeling). The As ion fluences used were 3.0 x 10 13 and 1.0 x 10 14 , and 1.5 x 10 12 cm -2 , for the SIMS and C-V, respectively, and the lowest atom and carrier densities measured in the profiles were 1 x 10 15 and 1 x 10 14 cm -3 , respectively. The maximum or saturated As density measured at Rsub(c) was approximately 1.5 x 10 16 cm -3 . The depth distribution for 0.50 deg misalignment from the differed only slightly, probably within the experimental measurement reproducibility, and the Rsub(c) was still approximately 3.4 μm. Atom and carrier depth distributions are also shown for misalignment angles of 1.0 and 2.0 deg from the of Si and are significantly degraded. Comparison of the SIMS profiles shows that channeling has saturated by the time an ion fluence of 3 x 10 13 cm -2 is reached. No significant redistribution of channeled As atoms occurs upon annealing at 800 0 C for 30 min. (author)

Characterization of electroless Au, Pt and Pd contacts on CdTe and ZnTe by RBS and SIMS techniques

Energy Technology Data Exchange (ETDEWEB)

Roumie, M. E-mail: mroumie@cnrs.edu.lb; Hageali, M.; Zahraman, K.; Nsouli, B.; Younes, G

2004-06-01

Rutherford backscattering spectrometry (RBS) was applied to characterize Au, Pt and Pd contacts on II-VI semiconductor materials, CdTe and ZnTe, used as nuclear detectors. Electroless thin film depositions were prepared by changing the concentration of the reaction solution. Contrary to the deposition reaction time, it was observed that the amount of solution dilution degree had a considerable effect on increasing the thickness of the metal layer. Furthermore, PICTS electrical measurements confirmed the depth profile analysis performed by RBS and SIMS.

Tritium depth profiling in carbon by accelerator mass spectrometry

International Nuclear Information System (INIS)

Friedrich, M.; Pilz, W.; Sun, G.; Behrisch, R.; Garcia-Rosales, C.; Bekris, N.; Penzhorn, R.-D.

2000-01-01

Tritium depth profiling measurements by accelerator mass spectrometry have been performed at the facility installed at the Rossendorf 3 MV Tandetron. In order to achieve a uniform erosion at the target surface inside a commercial Cs ion sputtering source and to avoid edge effects, the samples were mechanically scanned and the signals were recorded only during sputtering at the centre of the sputtered area. The sputtered negative ions were mass analysed by the injection magnet of the Tandetron. Hydrogen and deuterium profiles were measured with the Faraday cup between the injection magnet and the accelerator, while the tritium was counted after the accelerator with semiconductor detectors. Depth profiles have been measured for carbon samples which had been exposed to the plasma at the first wall of the Garching fusion experiment ASDEX-Upgrade and from the European fusion experiment JET, Culham, UK

Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams

International Nuclear Information System (INIS)

Fearn, Sarah; Chater, Richard; McPhail, David

2004-01-01

Sputtering of silicon by low-energy nitrogen primary ion beams has been studied by a number of authors to characterize the altered layer, ripple formation and the sputtered yields of secondary ions [Surf. Sci. 424 (1999) 299; Appl. Phys. A: Mater. Sci. Process 53 (1991) 179; Appl. Phys. Lett. 73 (1998) 1287]. This study examines the application of low-energy nitrogen primary ion beams for the possible depth profiling of ultra-shallow arsenic implants into silicon. The emphasis of this work is on the matrix silicon signals in the pre-equilibrium surface region that are used for dose calibration. Problems with these aspects of the concentration depth profiling can give significant inconsistencies well outside the error limits of the quoted dose for the arsenic implantation as independently verified by CV profiling. This occurs during depth profiling with either oxygen primary ion beams (with and without oxygen leaks) or cesium primary ion beams

Quantitative AMS depth profiling of the hydrogen isotopes collected in graphite divertor and wall tiles of the tokamak ASDEX-Upgrade

International Nuclear Information System (INIS)

Sun, G.Y.; Friedrich, M.; Groetzschel, R.; Buerger, W.; Behrisch, R.; Garcia-Rosales, C.

1997-01-01

The accelerator mass spectrometry (AMS) facility at the 3 MV Tandetron in Rossendorf has been applied for quantitative depth profiling of deuterium and tritium in samples cut from graphite protection tiles at the vessel walls of the fusion experiment ASDEX-Upgrade at the Max-Planck-Institut fuer Plasmaphysik in Garching. The tritium originates from D(d,p)T fusion reactions in the plasma and it is implanted in the vessel walls together with deuterium atoms and ions from the plasma. The T concentrations in the surface layers down to the analyzing depth of about 25 μm are in the range of 10 11 to 5 x 10 15 T-atoms/cm 3 corresponding to a tritium retention of 3 x 10 10 to 3.5 x 10 12 T-atoms/cm 2 . The much higher deuterium concentrations in the samples were simultaneously measured by calibrated conventional SIMS. In the surface layers down to the analyzing depth of about 25 μm the deuterium concentrations are between 3 x 10 18 and 8 x 10 21 atoms/cm 3 , corresponding to a deuterium retention of 2.5 x 10 16 to 2.5 x 10 18 atoms/cm 2 The estimated total amount of tritium in the vessel walls is of the same order of magnitude as the total number of neutrons produced in D(d,n) 3 He reactions. (orig.)

NanoSIMS analysis of Bacillus spores for forensics

Energy Technology Data Exchange (ETDEWEB)

Weber, P K; Davisson, M L; Velsko, S P

2010-02-23

directly image samples as well as depth profile samples. The directly imaged samples are sectioned to present a flat surface for analysis. We use focused ion beam (FIB) milling to top-cut individual spores to create flat surfaces for NanoSIMS analysis. Depth profiling can be used on whole spores, which are consumed in the process of analysis. The two methods generate comparable results, with the expected distribution of P and Ca. Ca-compatible elements, such as Mg and Mn, are found to follow the distribution of Ca. The distribution of other elements will be discussed. We envision the first application of this methodology will be to sample matching for trace samples. Towards this end, we are generating a baseline data set for samples produced by multiple laboratories. Preliminary results suggest that this method provides significant probative value for identifying samples produced by the same method in the same laboratory, as well as coming from the same initial production run. The results of this study will be presented.

Application of Depth-Averaged Velocity Profile for Estimation of Longitudinal Dispersion in Rivers

Directory of Open Access Journals (Sweden)

Mohammad Givehchi

2010-01-01

Full Text Available River bed profiles and depth-averaged velocities are used as basic data in empirical and analytical equations for estimating the longitudinal dispersion coefficient which has always been a topic of great interest for researchers. The simple model proposed by Maghrebi is capable of predicting the normalized isovel contours in the cross section of rivers and channels as well as the depth-averaged velocity profiles. The required data in Maghrebi’s model are bed profile, shear stress, and roughness distributions. Comparison of depth-averaged velocities and longitudinal dispersion coefficients observed in the field data and those predicted by Maghrebi’s model revealed that Maghrebi’s model had an acceptable accuracy in predicting depth-averaged velocity.

Ion-beam-induced topography and compositional changes in depth profiling

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.

1992-01-01

When energetic ions penetrate and stop in solids they not only add a new atomic constituent to the matrix but they also create atomic recoils and defects. The fluxes of these entities can give rise to spatial redistribution of atomic components, which may be partly or completely balanced by reordering and relaxation processes. These latter, in turn, may be influenced by fields and gradients induced by the primary relocation processes and by the energy deposited. These will include quasi-thermal, concentration (or chemical potential) and electrostatic gradients and may act to enhance or suppress atomic redistribution. Some, or all, of these processes will operate, depending upon the system under study, when energetic ions are employed to sputter erode a substrate for depth sectioning and, quite generally, can perturb the atomic depth profile that it is intended to evaluate. Theoretical and computational approaches to modelling such processes will be outlined and experimental examples shown which illustrate specific phenomena. In particular the accumulation of implant species and defect generation or redistribution can modify, with increasing ion fluence, the local sputtering mechanism and create further problems in depth profile analysis as a changing surface topography penetrates the solid. Examples of such topographic evolution and its influence on depth profiling analysis will be given and models to explain general and specific behaviour will be outlined. The commonality of models which examine both depth-dependent composition modification and surface topography evolution will be stressed. (author)

Interpreting Repeated Temperature-Depth Profiles for Groundwater Flow

NARCIS (Netherlands)

Bense, Victor F.; Kurylyk, Barret L.; Daal, van Jonathan; Ploeg, van der Martine J.; Carey, Sean K.

2017-01-01

Temperature can be used to trace groundwater flows due to thermal disturbances of subsurface advection. Prior hydrogeological studies that have used temperature-depth profiles to estimate vertical groundwater fluxes have either ignored the influence of climate change by employing steady-state

Polarization Induced Changes in LSM Thin Film Electrode Composition Observed by In Operando Raman Spectroscopy and TOF-SIMS

DEFF Research Database (Denmark)

McIntyre, Melissa D.; Walker, Robert; Traulsen, Marie Lund

2015-01-01

an applied potential.1-3 The presented work explores the polarisation induced changes in LSM electrode composition by utilizing in operando Raman spectroscopy and post mortem ToF-SIMS depth profiling on LSM thin film model electrodes fabricated by pulsed laser deposition on YSZ substrates with a thin (200 nm...... recorded through the LSM thin film electrodes and revealed distinct compositional changes throughout the electrodes (Figure 2). The electrode elements and impurities separated into distinct layers that were more pronounced for the stronger applied polarisations. The mechanism behind this separation...

An investigation on the mechanism of sublimed DHB matrix on molecular ion yields in SIMS imaging of brain tissue.

Science.gov (United States)

Dowlatshahi Pour, Masoumeh; Malmberg, Per; Ewing, Andrew

2016-05-01

We have characterized the use of sublimation to deposit matrix-assisted laser desorption/ionization (MALDI) matrices in secondary ion mass spectrometry (SIMS) analysis, i.e. matrix-enhanced SIMS (ME-SIMS), a common surface modification method to enhance sensitivity for larger molecules and to increase the production of intact molecular ions. We use sublimation to apply a thin layer of a conventional MALDI matrix, 2,5-dihydroxybenzoic acid (DHB), onto rat brain cerebellum tissue to show how this technique can be used to enhance molecular yields in SIMS while still retaining a lateral resolution around 2 μm and also to investigate the mechanism of this enhancement. The results here illustrate that cholesterol, which is a dominant lipid species in the brain, is decreased on the tissue surface after deposition of matrix, particularly in white matter. The decrease of cholesterol is followed by an increased ion yield of several other lipid species. Depth profiling of the sublimed rat brain reveals that the lipid species are de facto extracted by the DHB matrix and concentrated in the top most layers of the sublimed matrix. This extraction/concentration of lipids directly leads to an increase of higher mass lipid ion yield. It is also possible that the decrease of cholesterol decreases the potential suppression of ion yield caused by cholesterol migration to the tissue surface. This result provides us with significant insights into the possible mechanisms involved when using sublimation to deposit this matrix in ME-SIMS.

Secondary neutral mass spectrometry depth profile analysis of silicides

International Nuclear Information System (INIS)

Beckmann, P.; Kopnarski, M.; Oechsner, H.

1985-01-01

The Direct Bombardment Mode (DBM) of Secondary Neutral Mass Spectrometry (SNMS) has been applied for depth profile analysis of two different multilayer systems containing metal silicides. Due to the extremely high depth resolution obtained with low energy SNMS structural details down to only a few atomic distances are detected. Stoichiometric information on internal oxides and implanted material is supplied by the high quantificability of SNMS. (Author)

A new method for depth profiling reconstruction in confocal microscopy

Science.gov (United States)

Esposito, Rosario; Scherillo, Giuseppe; Mensitieri, Giuseppe

2018-05-01

Confocal microscopy is commonly used to reconstruct depth profiles of chemical species in multicomponent systems and to image nuclear and cellular details in human tissues via image intensity measurements of optical sections. However, the performance of this technique is reduced by inherent effects related to wave diffraction phenomena, refractive index mismatch and finite beam spot size. All these effects distort the optical wave and cause an image to be captured of a small volume around the desired illuminated focal point within the specimen rather than an image of the focal point itself. The size of this small volume increases with depth, thus causing a further loss of resolution and distortion of the profile. Recently, we proposed a theoretical model that accounts for the above wave distortion and allows for a correct reconstruction of the depth profiles for homogeneous samples. In this paper, this theoretical approach has been adapted for describing the profiles measured from non-homogeneous distributions of emitters inside the investigated samples. The intensity image is built by summing the intensities collected from each of the emitters planes belonging to the illuminated volume, weighed by the emitters concentration. The true distribution of the emitters concentration is recovered by a new approach that implements this theoretical model in a numerical algorithm based on the Maximum Entropy Method. Comparisons with experimental data and numerical simulations show that this new approach is able to recover the real unknown concentration distribution from experimental profiles with an accuracy better than 3%.

ImagingSIMS

Energy Technology Data Exchange (ETDEWEB)

2017-11-06

ImagingSIMS is an open source application for loading, processing, manipulating and visualizing secondary ion mass spectrometry (SIMS) data. At PNNL, a separate branch has been further developed to incorporate application specific features for dynamic SIMS data sets. These include loading CAMECA IMS-1280, NanoSIMS and modified IMS-4f raw data, creating isotopic ratio images and stitching together images from adjacent interrogation regions. In addition to other modifications of the parent open source version, this version is equipped with a point-by-point image registration tool to assist with streamlining the image fusion process.

Local in-depth analysis of ceramic materials by neutral beam secondary ion mass spectrometry

International Nuclear Information System (INIS)

Borchardt, G.; Scherrer, H.; Weber, S.; Scherrer, S.

1980-01-01

Local microanalysis of non-conducting surfaces by means of modern physical methods which use charged low-energy primary particles brings about severe problems because of the electrostatic charge accumulated on the sample surface. This is also true of secondary ion mass spectrometry (SIMS) where ions are usually used as primary particles. In the present work the basic features for production of neutral primary beams in commercial SIMS instruments by a simple technique are described. With suitably high sputtering rates, surface analyses and in-depth profiles can be made in reasonable measuring times. Results are given for chemical concentration distributions in the near-surface regions of an oxide glass and for the isotopic diffusion of Si-30 in a crystalline silicate with olivine structure (Co 2 SiO 4 ). (orig.)

Tritium depth profiling by AMS in carbon samples from fusion experiments

International Nuclear Information System (INIS)

Friedrich, M.; Pilz, W.; Sun, G.; Behrisch, R.; Garcia-Rosales, C.

2001-01-01

Tritium depth profiling measurements by accelerator mass spectrometry have been performed at a facility installed at the Rossendorf 3 MV Tandetron. In order to achieve an uniform erosion at the target surface inside of a commercial Cs ion sputtering source and to avoid edge effects, the samples were mechanically scanned inside of a commercial Cs sputter ion source. The sputtered negative ions were mass analysed by the injection magnet of the Tandetron. The tritium ions are counted after the acceleration with semiconductor detectors. Depth profiles have been measured for carbon samples which had been exposed to the plasma at the first wall of the Garching fusion experiment ASDEX-Upgrade and from the European fusion experiment JET, Culham/UK. A dedicated AMS facility with an air-insulated 100 kV tandem accelerator for depth profiling measurements at samples with high tritium concentration is under construction. First results of test operation are presented. (orig.)

Quantitative operando visualization of the energy band depth profile in solar cells.

Science.gov (United States)

Chen, Qi; Mao, Lin; Li, Yaowen; Kong, Tao; Wu, Na; Ma, Changqi; Bai, Sai; Jin, Yizheng; Wu, Dan; Lu, Wei; Wang, Bing; Chen, Liwei

2015-07-13

The energy band alignment in solar cell devices is critically important because it largely governs elementary photovoltaic processes, such as the generation, separation, transport, recombination and collection of charge carriers. Despite the expenditure of considerable effort, the measurement of energy band depth profiles across multiple layers has been extremely challenging, especially for operando devices. Here we present direct visualization of the surface potential depth profile over the cross-sections of operando organic photovoltaic devices using scanning Kelvin probe microscopy. The convolution effect due to finite tip size and cantilever beam crosstalk has previously prohibited quantitative interpretation of scanning Kelvin probe microscopy-measured surface potential depth profiles. We develop a bias voltage-compensation method to address this critical problem and obtain quantitatively accurate measurements of the open-circuit voltage, built-in potential and electrode potential difference.

Tritium depth profiling in carbon samples from fusion experiments

International Nuclear Information System (INIS)

Friedrich, M.; Pilz, W.; Sun, G.; Behrisch, R.; Garcia-Rosales, C.; Bekris, N.; Penzhorn, R.-D.

2000-01-01

Tritium depth profiling by accelerator mass spectrometry has been performed at the Rossendorf 3 MV Tandetron. Tritium particles are counted after the accelerator using a semiconductor detector, while deuterium and other light elements are simultaneously measured with the Faraday cup between the injection magnet and the accelerator. Depth profiles have been measured in carbon samples cut from the first wall tiles of the Garching fusion experiment ASDEX-Upgrade and of the European fusion experiment JET, Culham/UK. Tritium contents in the JET samples were up to six orders higher than in samples from ASDEX-Upgrade. Tritium beam currents from samples with high tritium content were measured partly in the Faraday cup before the accelerator. A dedicated tritium AMS facility with an air-insulated 100 kV tandem accelerator is under construction

Depth profiling by Raman spectroscopy of high-energy ion irradiated silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Wang, Xu; Zhang, Yanwen; Liu, Shiyi; Zhao, Ziqiang, E-mail: zqzhao@pku.edu.cn

2014-01-15

Single crystals of 6H–SiC were irradiated at room temperature with 20 MeV carbon ions at fluences of 1.5 × 10{sup 15} and 6.0 × 10{sup 15} cm{sup −2}. Raman measurements were performed to study irradiation induced damage and the in-depth damage profile of SiC. A clear change of damage from the surface down to the stopping region of carbon ions as simulated by SRIM is exhibited. The affected area as detected by Raman is in good agreement with SRIM predictions while a little shallower dpa profile is observed. The partial disorder defined in the present work as a function of depth is demonstrated. A shift of the position of the TO peak towards lower wavenumbers with in-depth damage and then to higher wavenumbers beyond the most damaged region indicates that tensile strain due to defects has a backward V-curve distribution. The damaged layer is subjected to a compressive in-plane stress associated with the out-of-plane strain and the magnitude of this stress also has a backward V-curve depth profile. The evolution of line width of the TO peak with depth clearly shows the density of defects reaches the higher level at the most damaged region. The Raman spectroscopy scanning technique is proved to be a powerful tool for profiling of crystal damage induced by high-energy ion implantation.

Statistically sound evaluation of trace element depth profiles by ion beam analysis

International Nuclear Information System (INIS)

Schmid, K.; Toussaint, U. von

2012-01-01

This paper presents the underlying physics and statistical models that are used in the newly developed program NRADC for fully automated deconvolution of trace level impurity depth profiles from ion beam data. The program applies Bayesian statistics to find the most probable depth profile given ion beam data measured at different energies and angles for a single sample. Limiting the analysis to % level amounts of material allows one to linearize the forward calculation of ion beam data which greatly improves the computation speed. This allows for the first time to apply the maximum likelihood approach to both the fitting of the experimental data and the determination of confidence intervals of the depth profiles for real world applications. The different steps during the automated deconvolution will be exemplified by applying the program to artificial and real experimental data.

Photothermal depth profiling for multilayered Structures by particle swarm optimization

International Nuclear Information System (INIS)

Chen, Z J; Fang, J W; Zhang, S Y

2011-01-01

This paper presents a method to reconstruct thermal conductivity depth profile of a layered medium using noisy photothermal data. The method tries to obtain an accurate reconstruction of discontinuous profile using particle swarm optimization (PSO) algorithm and total variation (TV) regularization. The reconstructions of different thermal conductivity profiles have been tested on simulated photothermal data. The simulation results show that the method can find accurately the locations of discontinuities, and the reconstructed profiles are in agreement with the original ones. Moreover, the results also show the method has good robustness and anti-noise capability.

Ion induced optical emission for surface and depth profile analysis

International Nuclear Information System (INIS)

White, C.W.

1977-01-01

Low-energy ion bombardment of solid surfaces results in the emission of infrared, visible, and ultraviolet radiation produced by inelastic ion-solid collision processes. The emitted optical radiation provides important insight into low-energy particle-solid interactions and provides the basis for an analysis technique which can be used for surface and depth profile analysis with high sensitivity. The different kinds of collision induced optical radiation emitted as a result of low-energy particle-solid collisions are reviewed. Line radiation arising from excited states of sputtered atoms or molecules is shown to provide the basis for surface and depth profile analysis. The spectral characteristics of this type of radiation are discussed and applications of the ion induced optical emission technique are presented. These applications include measurements of ion implant profiles, detection sensitivities for submonolayer quantities of impurities on elemental surfaces, and the detection of elemental impurities on complex organic substrates

Depth profiling: RBS versus energy-dispersive X-ray imaging using scanning transmission electron microscopy

International Nuclear Information System (INIS)

Markwitz, Andreas

2000-01-01

Rutherford backscattering spectrometry (RBS) is known to be one of the techniques ideal for analysis of thin films. Elemental concentrations of matrix components and impurities can be investigated as well as depth profiles of almost each element of the periodic table. Best of all, RBS has both a high sensitivity and a high depth resolution, and is a non-destructive analysis technique that does not require specific sample preparation. Solid-state samples are mounted without preparation inside a high-vacuum analysis chamber. However, depth-related interpretation of elemental depth profiles requires the material density of the specimen and stopping power values to be taken into consideration. In many cases, these parameters can be estimated with sufficient precision. However, the assumed density can be inaccurate for depth scales in the nanometer range. For example, in the case of Ge nanoclusters in 500 nm thick SiO 2 layers, uncertainty is related to the actual position of a very thin Ge nanocluster band. Energy-dispersive X-ray emission (EDX) spectroscopy, using a high-resolution scanning transmission electron microscope (STEM) can assist in removing this uncertainty. By preparing a thin section of the specimen, EDX can be used to identify the position of the Ge nanocluster band very precisely, by correlating the Ge profile with the depth profiles of silicon and oxygen. However, extraction of the concentration profiles from STEM-EDX spectra is in general not straightforward. Therefore, a combination of the two very different analysis techniques is often the best and only successful way to extract high-resolution concentration profiles

Fluence dependence of disorder depth profiles in Pb implanted Si

International Nuclear Information System (INIS)

Christodoulides, C.E.; Kadhim, N.J.; Carter, G.

1980-01-01

The total, depth integrated disorder, induced by Pb implantation into Si at room temperature, initially increases rapidly with implantation fluence and then reaches a quasi saturation level where the increase with fluence is slow. Measurements of the depth distributions of the disorder, using high resolution low angle exit Rutherford Backscattering/Channelling analysis, suggest that the quasi saturation results from overlapping of disordered zones generated deep in the tail of the disorder-depth profiles. The depth of the disordered solid-crystal boundary, xsub(D), increases with ion fluence PHI, according to the relation xsub(D) = x bar + f(PHI).σ, where x bar is the most probable projected depth and σ the projected standard deviation of disorder generation. It is shown that this relationship is consistent with an approximately Gaussian depth distribution of disorder production. (author)

Photothermal radiometric determination of thermal diffusivity depth profiles in a dental resin

International Nuclear Information System (INIS)

MartInez-Torres, P; Alvarado-Gil, J J; Mandelis, A

2010-01-01

The depth of curing due to photopolymerization in a commercial dental resin is studied using photothermal radiometry. The sample consists of a thick layer of resin on which a thin metallic layer is deposited guaranteeing full opacity of the sample. In this case, purely thermal-wave inverse problem techniques without the interference of optical profiles can be used. Thermal profiles are obtained by heating the coating with a modulated laser beam and performing a modulation frequency scan. Before each frequency scan, photopolymerization was induced using a high power blue LED. However due to the fact that dental resins are highly light dispersive materials, the polymerization process depends strongly on the optical absorption coefficient inducing a depth dependent thermal diffusion in the sample. It is shown that using a robust depth profilometric inverse method one can reconstruct the thermal diffusivity profile of the photopolymerized resin.

Nondestructive strain depth profiling with high energy X-ray diffraction: System capabilities and limitations

Science.gov (United States)

Zhang, Zhan; Wendt, Scott; Cosentino, Nicholas; Bond, Leonard J.

2018-04-01

Limited by photon energy, and penetration capability, traditional X-ray diffraction (XRD) strain measurements are only capable of achieving a few microns depth due to the use of copper (Cu Kα1) or molybdenum (Mo Kα1) characteristic radiation. For deeper strain depth profiling, destructive methods are commonly necessary to access layers of interest by removing material. To investigate deeper depth profiles nondestructively, a laboratory bench-top high-energy X-ray diffraction (HEXRD) system was previously developed. This HEXRD method uses an industrial 320 kVp X-Ray tube and the Kα1 characteristic peak of tungsten, to produces a higher intensity X-ray beam which enables depth profiling measurement of lattice strain. An aluminum sample was investigated with deformation/load provided using a bending rig. It was shown that the HEXRD method is capable of strain depth profiling to 2.5 mm. The method was validated using an aluminum sample where both the HEXRD method and the traditional X-ray diffraction method gave data compared with that obtained using destructive etching layer removal, performed by a commercial provider. The results demonstrate comparable accuracy up to 0.8 mm depth. Nevertheless, higher attenuation capabilities in heavier metals limit the applications in other materials. Simulations predict that HEXRD works for steel and nickel in material up to 200 µm, but experiment results indicate that the HEXRD strain profile is not practical for steel and nickel material, and the measured diffraction signals are undetectable when compared to the noise.

Element depth profiles of porous silicon

International Nuclear Information System (INIS)

Kobzev, A.P.; Nikonov, O.A.; Kulik, M.; Zuk, J.; Krzyzanowska, H.; Ochalski, T.J.

1997-01-01

Element depth profiles of porous silicon were measured on the Van-de-Graaff accelerator in the energy range of 4 He + ions from 2 to 3.2 MeV. Application of complementary RBS, ERD and 16 O(α,α) 16 O nuclear reaction methods permits us to obtain: 1) the exact silicon, oxygen and hydrogen distribution in the samples, 2) the distribution of partial pore concentrations. The oxygen concentration in porous silicon reaches 30%, which allows one to assume the presence of silicon oxide in the pores and to explain the spectrum shift of luminescence into the blue area

3D ToF-SIMS Analysis of Peptide Incorporation into MALDI Matrix Crystals with Sub-micrometer Resolution.

Science.gov (United States)

Körsgen, Martin; Pelster, Andreas; Dreisewerd, Klaus; Arlinghaus, Heinrich F

2016-02-01

The analytical sensitivity in matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS) is largely affected by the specific analyte-matrix interaction, in particular by the possible incorporation of the analytes into crystalline MALDI matrices. Here we used time-of-flight secondary ion mass spectrometry (ToF-SIMS) to visualize the incorporation of three peptides with different hydrophobicities, bradykinin, Substance P, and vasopressin, into two classic MALDI matrices, 2,5-dihydroxybenzoic acid (DHB) and α-cyano-4-hydroxycinnamic acid (HCCA). For depth profiling, an Ar cluster ion beam was used to gradually sputter through the matrix crystals without causing significant degradation of matrix or biomolecules. A pulsed Bi3 ion cluster beam was used to image the lateral analyte distribution in the center of the sputter crater. Using this dual beam technique, the 3D distribution of the analytes and spatial segregation effects within the matrix crystals were imaged with sub-μm resolution. The technique could in the future enable matrix-enhanced (ME)-ToF-SIMS imaging of peptides in tissue slices at ultra-high resolution. Graphical Abstract ᅟ.

Non destructive method of determination of depth profiling with ESCA spectroscopy by angular distribution

International Nuclear Information System (INIS)

Pijolat, Michele.

1979-07-01

The aim of this study has been to determine the possibilities of photoelectron spectroscopy ESCA for depth profiling in the first hundred angstrom of a compound. First of all, the technique ESCA has been described in an analytical point of view. Then, the common sputter profiling method has been tested, and a model to deduce the concentrations profile has been formulated. However the analysis of the various effects due to the sputtering events showed that this method is able to give only the profile shape with a bad depth resolution. A new non destructive method based on the analysed depth dependence with photoelectrons emission angle is settled. A computational method (simplexe optimization) is used to deduce the concentrations profile. Simulation have revealed the necessity of submitting constraints proper to the system physical properties and allowed to state the applicability range of the method. The interface profiles Ag-Pd, Ag-Al 2 O 3 and SiO 2 -Si have been measured, and the surface segregation in CuNi alloy has been studied [fr

Pulsed glow discharge mass spectrometry for molecular depth profiling of polymers

International Nuclear Information System (INIS)

Lobo, L.; Pereiro, R.; Sanz-Medel, A.; Bordel, N.; Pisonero, J.; Licciardello, A.; Tuccitto, N.; Tempez, A.; Chapon, P.

2009-01-01

Full text: Nowadays thin films of polymeric materials involve a wide range of industrial applications, so techniques capable of providing in-depth profile information are required. Most of the techniques available for this purpose are based on the use of energetic particle beams which interact with polymers producing undesirable physicochemical modifications. Radiofrequency pulsed glow discharge (rf-pulsed-GD) coupled to time-of-flight mass spectrometry (TOFMS) could afford the possibility of acquiring both elemental and molecular information creating minimal damage to surfaces and thereby obtaining depth profiles. This work will evaluate rf-GDs coupled to an orthogonal TOFMS for direct analysis of polymers. (author)

Numerical and experimental depth profile analyses of coated and attached layers by laser-induced breakdown spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ardakani, H. Afkhami [Laser and Plasma Research Institute, Shahid Beheshti University, G. C., Evin, Tehran (Iran, Islamic Republic of); Tavassoli, S.H., E-mail: h-tavassoli@sbu.ac.i [Laser and Plasma Research Institute, Shahid Beheshti University, G. C., Evin, Tehran (Iran, Islamic Republic of)

2010-03-15

Laser-induced breakdown spectroscopy (LIBS) is applied for depth profile analysis of different thicknesses of copper foils attached on steel and aluminum substrates. In order to account interfacial effects, depth profile analysis of copper coated on steel is also carried out. Experiments are done at ambient air and at two different wavelengths of 266 and 1064 nm of a Nd:YAG laser with pulse durations of 5 ns. A three-dimensional model of multi-pulse laser ablation is introduced on the base of normal evaporation mechanism and the simulation results are compared with the experiments. A normalized concentration (C{sup N}) is introduced for determination of interface position and results are compared with the usually used normalized intensity (I{sup N}). The effect of coating thickness on average ablation rate and resolution of depth profiling are examined. There is a correlation coefficient higher than 0.95 between the model and experimental depth profiles based on the C{sup N} method. Depth profile analysis on the base of C{sup N} method shows a better depth resolution in comparison with I{sup N} method .Increase in the layer thickness, leads to a decrease in the ablation rate.

Model for hydrogen isotope backscattering, trapping and depth profiles in C and a-Si

International Nuclear Information System (INIS)

Cohen, S.A.; McCracken, G.M.

1979-03-01

A model of low energy hydrogen trapping and backscattering in carbon and a-silicon is described. Depth profiles are calculated and numerical results presented for various incident angular and energy distributions. The calculations yield a relation between depth profiles and the incident ion energy distribution. The use of this model for tokamak plasma diagnosis is discussed

ChromBiSim: Interactive chromatin biclustering using a simple approach.

Science.gov (United States)

Noureen, Nighat; Zohaib, Hafiz Muhammad; Qadir, Muhammad Abdul; Fazal, Sahar

2017-10-01

Combinatorial patterns of histone modifications sketch the epigenomic locale. Specific positions of these modifications in the genome are marked by the presence of such signals. Various methods highlight such patterns on global scale hence missing the local patterns which are the actual hidden combinatorics. We present ChromBiSim, an interactive tool for mining subsets of modifications from epigenomic profiles. ChromBiSim efficiently extracts biclusters with their genomic locations. It is the very first user interface based and multiple cell type handling tool for decoding the interplay of subsets of histone modifications combinations along their genomic locations. It displays the results in the forms of charts and heat maps in accordance with saving them in files which could be used for post analysis. ChromBiSim tested on multiple cell types produced in total 803 combinatorial patterns. It could be used to highlight variations among diseased versus normal cell types of any species. ChromBiSim is available at (http://sourceforge.net/projects/chrombisim) in C-sharp and python languages. Copyright © 2017 Elsevier Inc. All rights reserved.

Scanning spreading resistance microscopy of shallow doping profiles in silicon

International Nuclear Information System (INIS)

Suchodolskis, A.; Hallen, A.; Gran, J.; Hansen, T.-E.; Karlsson, U.O.

2006-01-01

We demonstrate the application of scanning spreading resistance microscopy (SSRM) for characterization of shallow highly-conductive layers formed by boron implantation of lowly doped n-type silicon substrate followed by a post-implantation annealing. The electrically active dopant concentration versus depth was obtained from a cross-section of freshly cleaved samples where the Si-surface could be clearly distinguished by depositing a SiO 2 -layer before cleavage. To quantify free carrier concentration we calibrated our data against samples with implanted/annealed boron profiles established by secondary ion mass spectrometry (SIMS). A good fit of SSRM and SIMS data is possible for free carrier concentrations lower than 10 20 cm -3 , but for higher concentrations there is a discrepancy indicating an incomplete activation of the boron

A small and compact AMS facility for tritium depth profiling

Indian Academy of Sciences (India)

employing diamond-like carbon (DLC) stripper foils at this accelerator, another ... the switching magnet the tritium ions are counted with a surface barrier detector. .... AMS has been successfully applied to depth profiling of tritium in graphite ...

SIMS applications in biological research

International Nuclear Information System (INIS)

Prince, K.E.; Burke, P.T.; Kelly, I.J.

2000-01-01

Full text: SIMS has been utilised as a tool for biological research since the early 1970's. SIMS' abilities in isotopic detection with high sensitivity, imaging capabilities at a subcellular level, and the possibility of molecular imaging have been the main areas of interest for biological development. However, whilst hundreds of instruments are available in industrial and university laboratories for semiconductor and materials analysis, only a handful successfully perform biological research. For this reason there is generally a lack of awareness of SIMS by the biological community. Biological SIMS analysis requires a working knowledge of both biology and SIMS. Sample preparation is a critical and time consuming prerequisite for any successful biological SIMS study. In addition, for quantification to be possible a homogeneous, matrix matched standard must be available. Once these difficulties are more widely understood and overcome there will be a greater motivation for the biological community to embrace SIMS as a unique tool in their research. This paper provides an overview of some of the more successful biological SIMS application areas internationally, and summarises the types of biological SIMS requests received by ANSTO

Depth-profiling by confocal Raman microscopy (CRM): data correction by numerical techniques.

Science.gov (United States)

Tomba, J Pablo; Eliçabe, Guillermo E; Miguel, María de la Paz; Perez, Claudio J

2011-03-01

The data obtained in confocal Raman microscopy (CRM) depth profiling experiments with dry optics are subjected to significant distortions, including an artificial compression of the depth scale, due to the combined influence of diffraction, refraction, and instrumental effects that operate on the measurement. This work explores the use of (1) regularized deconvolution and (2) the application of simple rescaling of the depth scale as methodologies to obtain an improved, more precise, confocal response. The deconvolution scheme is based on a simple predictive model for depth resolution and the use of regularization techniques to minimize the dramatic oscillations in the recovered response typical of problem inversion. That scheme is first evaluated using computer simulations on situations that reproduce smooth and sharp sample transitions between two materials and finally it is applied to correct genuine experimental data, obtained in this case from a sharp transition (planar interface) between two polymeric materials. It is shown that the methodology recovers very well most of the lost profile features in all the analyzed situations. The use of simple rescaling appears to be only useful for correcting smooth transitions, particularly those extended over distances larger than those spanned by the operative depth resolution, which limits the strategy to the study of profiles near the sample surface. However, through computer simulations, it is shown that the use of water immersion objectives may help to reduce optical distortions and to expand the application window of this simple methodology, which could be useful, for instance, to safely monitor Fickean sorption/desorption of penetrants in polymer films/coatings in a nearly noninvasive way.

Pulsed photothermal depth profiling of tattoos undergoing laser removal treatment

Science.gov (United States)

Milanic, Matija; Majaron, Boris

2012-02-01

Pulsed photothermal radiometry (PPTR) allows noninvasive determination of temperature depth profiles induced by pulsed laser irradiation of strongly scattering biological tissues and organs, including human skin. In present study, we evaluate the potential of this technique for investigational characterization and possibly quantitative evaluation of laser tattoo removal. The study involved 5 healthy volunteers (3 males, 2 females), age 20-30 years, undergoing tattoo removal treatment using a Q-switched Nd:YAG laser. There were four measurement and treatment sessions in total, separated by 2-3 months. Prior to each treatment, PPTR measurements were performed on several tattoo sites and one nearby healthy site in each patient, using a 5 ms Nd:YAG laser at low radiant exposure values and a dedicated radiometric setup. The laser-induced temperature profiles were then reconstructed by applying a custom numerical code. In addition, each tatoo site was documented with a digital camera and measured with a custom colorimetric system (in tristimulus color space), providing an objective evaluation of the therapeutic efficacy to be correlated with our PPTR results. The results show that the laser-induced temperature profile in untreated tattoos is invariably located at a subsurface depth of 300 μm. In tattoo sites that responded well to laser therapy, a significant drop of the temperature peak was observed in the profiles obtained from PPTR record. In several sites that appeared less responsive, as evidenced by colorimetric data, a progressive shift of the temperature profile deeper into the dermis was observed over the course of consecutive laser treatments, indicating that the laser tattoo removal was efficient.

Deuterium depth profiles in metals using imaging field desorption

International Nuclear Information System (INIS)

Panitz, J.A.

1976-01-01

Depth profiles of 80 eV deuterium ions implanted in-situ into (110) tungsten have been measured by Imaging, Field-Desorption Mass Spectrometry. The relative abundance of deuterium was measured from the surface to a depth of 300A with less than 3A depth resolution by controlled field-evaporation of the specimen, and time-of-flight mass spectroscopy. The position of the depth distribution maximum (57 +- 3A from the surface) is shown to be in close agreement with that predicted theoretically for low energy deuterium implants using an amorphous-solid model. Structure in the distribution is attributed to surface morphology and channeling phenomena in the near surface region. Implanted impurity species from the ion source and tungsten surface have also been observed. For C + , C 2+ and 0 + , penetration is limited to less than 30A, with abundance decreasing exponentially from the surface. These results are interpreted in the context of the CTR first-wall impurity problem, and are used to suggest a novel method for in-situ characterization of low energy plasma species in operating CTR devices

Depth profile of In and As in Si measured by RBS with He and C ions

Energy Technology Data Exchange (ETDEWEB)

Yang, Q.; Fang, Z. [Newcastle Univ., NSW (Australia). Dept. of Physics; Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia). Dept. of Nuclear Physics

1993-12-31

The depth profile of As and In implanted into Si have been measured by RBS (Rutherford Backscattering Spectrometry) with 2 MeV He ions and 6 MeV C ions. Advantages of enhanced depth and mass resolution with C ions have been demonstrated over the conventional He RBS. More reliable information for the depth profile of In and As in Si has been obtained. 12 refs., 3 figs.

Depth profile of In and As in Si measured by RBS with He and C ions

Energy Technology Data Exchange (ETDEWEB)

Yang, Q; Fang, Z [Newcastle Univ., NSW (Australia). Dept. of Physics; Ophel, T R [Australian National Univ., Canberra, ACT (Australia). Dept. of Nuclear Physics

1994-12-31

The depth profile of As and In implanted into Si have been measured by RBS (Rutherford Backscattering Spectrometry) with 2 MeV He ions and 6 MeV C ions. Advantages of enhanced depth and mass resolution with C ions have been demonstrated over the conventional He RBS. More reliable information for the depth profile of In and As in Si has been obtained. 12 refs., 3 figs.

Buoyancy frequency profiles and internal semidiurnal tide turning depths in the oceans

OpenAIRE

King, B.; Stone, M.; Zhang, H.P.; Gerkema, T.; Marder, M.; Scott, R.B.; Swinney, H.L.

2012-01-01

We examine the possible existence of internal gravity wave "turning depths," depths below which the local buoyancy frequency N(z) becomes smaller than the wave frequency. At a turning depth, incident gravity waves reflect rather than reaching the ocean bottom as is generally assumed. Here we consider internal gravity waves at the lunar semidiurnal (M-2) tidal frequency, omega(M2). Profiles of N-2(z) (the quantity in the equations of motion) are computed using conductivity, temperature, and de...

Positron depth profiling

International Nuclear Information System (INIS)

Coleman, P.

2001-01-01

Wide-ranging studies of defects below the surface of semiconductor structures have been performed at the University of Bath, in collaboration with the University of Surrey Centre for Ion Beam Applications and with members of research teams at a number of UK universities. Positron implantation has been used in conjunction with other spectroscopies such as RBS-channeling and SIMS, and electrical characterisation methods. Research has ranged from the development of a positron-based technique to monitor the in situ annealing of near-surface open-volume defects to the provision of information on defects to comprehensive diagnostic investigations of specific device structures. We have studied Si primarily but not exclusively; e.g., we have investigated ion-implanted SiC and SiO 2 /GaAs structures. Of particular interest are the applications of positron annihilation spectroscopy to ion-implanted semiconductors, where by linking ion dose to vacancy-type defect concentration one can obtain information on ion dose and uniformity with a sensitivity not achievable by standard techniques. A compact, user-friendly positron beam system is currently being developed at Bath, in collaboration with SCRIBA, with the intention of application in an industrial environment. (orig.)

Factors that influence an elemental depth concentration profile

International Nuclear Information System (INIS)

McHugh, J.A.

1975-01-01

The use of secondary ion mass spectrometry in concentration profiling is discussed. Two classes of factors that influence an elemental concentration profile are instrumental effects and ion-matrix effects. Instrumental factors that must be considered are: (1) uniformity of the primary ion current density, (2) constancy of the primary ion current, (3) redeposition, (4) memory, (5) primary ion beam tailing and the nonfocused component, (6) chemical purity of the primary ion beam, and (7) residual gas impurities. Factors which can be classified as ion matrix effects are: (1) the mean escape depth of secondary ions, (2) recoil implantation, (3) molecular ion interferences, (4) primary ion beam induced diffusion of matrix species, (5) nonuniform sputter removal of matrix layers, and (6) implanted primary ion chemical and lattice damage effects

Effects of Shear Fracture on In-depth Profile Modification of Weak Gels

Institute of Scientific and Technical Information of China (English)

Li Xianjie; Song Xinwang; Yue Xiang'an; Hou Jirui; Fang Lichun; Zhang Huazhen

2007-01-01

Two sand packs were filled with fine glass beads and quartz sand respectively. The characteristics of crosslinked polymer flowing through the sand packs as well as the influence of shear fracture of porous media on the in-depth profile modification of the weak gel generated from the crosslinked polymer were investigated. The results indicated that under the dynamic condition crosslinking reaction happened in both sand packs,and the weak gels in these two cases became small gel particles after water flooding. The differences were:the dynamic gelation time in the quartz sand pack was longer than that in the glass bead pack. Residual resistance factor (FRR) caused by the weak gel in the quartz sand pack was smaller than that in the glass bead pack. The weak gel became gel particles after being scoured by subsequent flood water. A weak gel with uniform apparent viscosity and sealing characteristics was generated in every part of the glass bead pack,which could not only move deeply into the sand pack but also seal the high capacity channels again when it reached the deep part. The weak gel performed in-depth profile modification in the glass bead pack,while in the quartz sand pack,the weak gel was concentrated with 100 cm from the entrance of the sand pack. When propelled by the subsequent flood water,the weak gel could move towards the deep part of the sand pack but then became tiny gel particles and could not effectively seal the high capacity channels there. The in-depth profile modification of the weak gel was very weak in the quartz sand pack. It was the shear fracture of porous media that mainly affected the properties and weakened the in-depth profile modification of the weak gel.

Quantitative evaluation of sputtering induced surface roughness and its influence on AES depth profiles of polycrystalline Ni/Cu multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Yan, X.L.; Coetsee, E. [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa); Wang, J.Y., E-mail: wangjy@stu.edu.cn [Department of Physics, Shantou University, 243 Daxue Road, Shantou, 515063, Guangdong (China); Swart, H.C., E-mail: swartHC@ufs.ac.za [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa); Terblans, J.J., E-mail: terblansjj@ufs.ac.za [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa)

2017-07-31

Highlights: • Linear Least Square (LLS) method used to separate Ni and Cu Auger spectra. • The depth-dependent ion sputtering induced roughness was quantitatively evaluated. • The depth resolution better when profiling with dual-ion beam vs. a single-ion beam. • AES depth profiling with a lower ion energy results in a better depth resolution. - Abstract: The polycrystalline Ni/Cu multilayer thin films consisting of 8 alternating layers of Ni and Cu were deposited on a SiO{sub 2} substrate by means of electron beam evaporation in a high vacuum. Concentration-depth profiles of the as-deposited multilayered Ni/Cu thin films were determined with Auger electron spectroscopy (AES) in combination with Ar{sup +} ion sputtering, under various bombardment conditions with the samples been stationary as well as rotating in some cases. The Mixing-Roughness-Information depth (MRI) model used for the fittings of the concentration-depth profiles accounts for the interface broadening of the experimental depth profiling. The interface broadening incorporates the effects of atomic mixing, surface roughness and information depth of the Auger electrons. The roughness values extracted from the MRI model fitting of the depth profiling data agrees well with those measured by atomic force microscopy (AFM). The ion sputtering induced surface roughness during the depth profiling was accordingly quantitatively evaluated from the fitted MRI parameters with sample rotation and stationary conditions. The depth resolutions of the AES depth profiles were derived directly from the values determined by the fitting parameters in the MRI model.

Deployment and early results from the CanSIM (Canadian Solar Spectral Irradiance Meter) network

Science.gov (United States)

Tatsiankou, Viktar; Hinzer, Karin; Schriemer, Henry; McVey-White, Patrick; Beal, Richard

2017-09-01

Three of seven stations have been deployed as part of the Canadian Solar Spectral Irradiance (CanSIM) network situated in Ottawa, Varennes and Egbert to measure long term spectral variation of the direct normal (DNI) and global horizontal irradiances (GHI) across the country. Every station is equipped with a solar tracker, SolarSIM-D2+, SolarSIM-G+, and SR20 pyranometer, reporting the spectral DNI, GHI, diffuse horizontal irradiance (DHI) and aerosol optical depth in the 280-4000 nm range, broadband DNI, GHI, and DHI, atmospheric total column ozone and water vapour amounts. The spectral GHI as measured by the SolarSIM-G+ was within 5% as compared to EKO MS-700 spectroradiometer in 350-1050 nm range on 17 March 2017. The difference in the GHI as reported by SolarSIM-G+ and SR20 pyranometer from all stations was within 2% on 14 April 2017. Furthermore, on this day, the daily GHI sum for the Ottawa, Varennes, and Egbert stations was 7.01, 6.95, and 7.11 kWh/m2, respectively, while the daily DNI sum was 10.65, 10.86, 10.04 kWh/m2, respectively.

KEY COMPARISONS: Final report: SIM regional comparison of ac-dc voltage transfer difference (SIM.EM.K6a, SIM.EM-K9 and SIM.EM-K11)

Science.gov (United States)

Campos, Sara; Filipski, Piotr; Izquierdo, Daniel; Afonso, Edson; Landim, Régis P.; Di Lillo, Lucas; Lipe, Thomas

2009-01-01

Three comparisons of ac-dc voltage transfer difference held from January to December 2004 are reported. Six NMIs in the SIM region took part: NRC (Canada), NIST (United States of America), CENAM (Mexico), INTI (Argentina), UTE (Uruguay) and INMETRO (Brazil). The comparisons were proposed to assess the measurement capabilities in ac-dc voltage transfer difference of the NMIs in the SIM region. The test points were selected to link the results with the equivalent CCEM Key Comparisons, through three NMIs participating in both SIM and CCEM key comparisons. Additionally, a SIM.EM-Supplementary comparison was proposed, in support of the SIM NMIs' power/energy meter calibration capabilities. One technical protocol and one travelling standard were used, to economize on time and resources. The report shows the degree of equivalence in the SIM region and also the degree of equivalence with the corresponding CCEM reference value. The results of all participants support the values and uncertainties of the applicable CMC entries for ac-dc voltage transfer difference in the Key Comparison Database held at the BIPM. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (MRA).

Depth Profiles in Maize ( Zea mays L.) Seeds Studied by Photoacoustic Spectroscopy

Science.gov (United States)

Hernández-Aguilar, C.; Domínguez-Pacheco, A.; Cruz-Orea, A.; Zepeda-Bautista, R.

2015-06-01

Photoacoustic spectroscopy (PAS) has been used to analyze agricultural seeds and can be applied to the study of seed depth profiles of these complex samples composed of different structures. The sample depth profile can be obtained through the photoacoustic (PA) signal, amplitude, and phase at different light modulation frequencies. The PA signal phase is more sensitive to changes of thermal properties in layered samples than the PA signal amplitude. Hence, the PA signal phase can also be used to characterize layers at different depths. Thus, the objective of the present study was to obtain the optical absorption spectra of maize seeds ( Zea mays L.) by means of PAS at different light modulation frequencies (17 Hz, 30 Hz, and 50 Hz) and comparing these spectra with the ones obtained from the phase-resolved method in order to separate the optical absorption spectra of seed pericarp and endosperm. The results suggest the possibility of using the phase-resolved method to obtain optical absorption spectra of different seed structures, at different depths, without damaging the seed. Thus, PAS could be a nondestructive method for characterization of agricultural seeds and thus improve quality control in the food industry.

Study of damaged depth profiles of ion-irradiated PEEK

Czech Academy of Sciences Publication Activity Database

Vacík, Jiří; Hnatowicz, Vladimír; Červená, Jarmila; Apel, P. Yu.; Posta, S.; Kobayashi, Y.

2007-01-01

Roč. 201, 19-20 (2007), s. 8370-8372 ISSN 0257-8972 R&D Projects: GA MPO(CZ) 1H-PK2/05; GA MŠk 1P04LA213 Institutional research plan: CEZ:AV0Z10480505 Keywords : Oxygen irradiation * Poly-aryl-ether-ether ketone * Thermal neutron depth profiling (TNDP) Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.678, year: 2007

The use of ultra-low-energy dynamic SIMS in the study of the tarnishing of silver

International Nuclear Information System (INIS)

Dowsett, M.G.; Adriaens, A.; Soares, M.; Wouters, H.; Palitsin, V.V.N.; Gibbons, R.; Morris, R.J.H.

2005-01-01

This paper describes a new application in cultural heritage and other areas for a highly surface specific analytical technique originally developed for semiconductor research. The technique, ultra-low-energy dynamic secondary ion mass spectrometry (uleSIMS), is microdestructive, but has a sensitivity typically better than 1 atom in 10 6 . It can provide an analysis within the top nm, or the top few μm of a surface, and gives chemical fingerprinting as well as atomic composition information. It is complimentary to other near-surface techniques such as SEM-EDX, XRD and electrochemical methods. Here, we describe the use of uleSIMS with SEM and SEM-EDX in a study of the tarnishing of museum silver. We report on the initial stages in the development of reference surfaces for control experiments, and on the data obtained from a lightly tarnished sterling silver test coupon exposed in a museum environment for 2 years. First results from a study of a XVII c. silver fragment, aimed at detecting differences in the tarnish or coating in different areas are also presented. Overall we show that the surface chemistry of all these surfaces is a complex mixture of that due to corrosion, contaminants deposited by solvents, polish media (in an overlayer which may only be a few nm thick), handling and the environment, as well as particulates - both from the environment and from polishes. However, surfaces with different histories show large variations in their uleSIMS spectra and depth profiles, and we attempt to lay the groundwork for the interpretation of these

Determining concentration depth profiles in fluorinated networks by means of electric force microscopy

International Nuclear Information System (INIS)

Miccio, Luis A.; Kummali, Mohammed M.; Alegria, Angel; Montemartini, Pablo E.; Oyanguren, Patricia A.; Schwartz, Gustavo A.; Colmenero, Juan

2011-01-01

By means of electric force microscopy, composition depth profiles were measured with nanometric resolution for a series of fluorinated networks. By mapping the dielectric permittivity along a line going from the surface to the bulk, we were able to experimentally access to the fluorine concentration profile. Obtained data show composition gradient lengths ranging from 30 nm to 80 nm in the near surface area for samples containing from 0.5 to 5 wt. % F, respectively. In contrast, no gradients of concentration were detected in bulk. This method has several advantages over other techniques because it allows profiling directly on a sectional cut of the sample. By combining the obtained results with x-ray photoelectron spectroscopy measurements, we were also able to quantify F/C ratio as a function of depth with nanoscale resolution.

A new look at the steel cord-rubber adhesive interphase by chemical depth profiling

International Nuclear Information System (INIS)

Hammer, G.E.

2001-01-01

The adhesive interphase formed between brass plated steel cord and sulfur crosslinked rubber is known to be a complex layer of metal oxides, sulfides, and rubber. Hostile aging of this system produces changes in the structure, morphology, thickness, and mechanical properties of this layer. In a previous publication it has been shown that the overall thickness of the sulfide layer as measured by depth profiling with Auger electron spectroscopy could be used to characterize the degradation of the adhesive bond [G. E. Hammer et al., J. Vac. Sci. Technol. A 12, 2388 (1994)]. In this work multivariate statistical analysis of the sulfur Auger electron spectra was used to produce chemical depth profiles of the individual copper and zinc sulfide layers. These chemical depth profiles give new insight into the adhesion degradation mechanism on the nanometer scale. Particularly, the percentage of copper sulfide in the layer was found to be an accurate predictor of adhesion degradation

Design and construction of an analytical instrument for neutron depth profiling

International Nuclear Information System (INIS)

Mutis, Octavio; Venegas, Rafael

1998-01-01

Full text: An experimental facility for Neutron Depth Profiling, recently constructed at CCHEN's laboratories is described. The technique allows to measure the mean atomic concentration ρ(x) of certain isotopes as a function of distance x to the surface for the first depth microns. The observation area is about 15 mm in diameter and the range in depth depends on the matrix stopping power and on the energy of the charged particle associated with the A(n,y)B reaction, in which this technique is supported, where A is the isotope to be detected, y is an α particle or a proton and B is the recoil nucleus. The spatial resolution depends upon the characteristics of the detection chain and its geometry and of the thermal spectrum of the beam. An appropriate deconvolution on the merging particle energy spectrum allows to recover the concentration profile. The application of the technique to the analysis of some phospho borosilicate films deposited on s Si substrate, lithium tantalate ceramics deposited on Si substrate and a sintered of lithium and Zn-Ni-Mn oxide are shown here with a resolution comparative to that of advanced laboratories

ActivitySim: large-scale agent based activity generation for infrastructure simulation

Energy Technology Data Exchange (ETDEWEB)

Gali, Emmanuel [Los Alamos National Laboratory; Eidenbenz, Stephan [Los Alamos National Laboratory; Mniszewski, Sue [Los Alamos National Laboratory; Cuellar, Leticia [Los Alamos National Laboratory; Teuscher, Christof [PORTLAND STATE UNIV

2008-01-01

The United States' Department of Homeland Security aims to model, simulate, and analyze critical infrastructure and their interdependencies across multiple sectors such as electric power, telecommunications, water distribution, transportation, etc. We introduce ActivitySim, an activity simulator for a population of millions of individual agents each characterized by a set of demographic attributes that is based on US census data. ActivitySim generates daily schedules for each agent that consists of a sequence of activities, such as sleeping, shopping, working etc., each being scheduled at a geographic location, such as businesses or private residences that is appropriate for the activity type and for the personal situation of the agent. ActivitySim has been developed as part of a larger effort to understand the interdependencies among national infrastructure networks and their demand profiles that emerge from the different activities of individuals in baseline scenarios as well as emergency scenarios, such as hurricane evacuations. We present the scalable software engineering principles underlying ActivitySim, the socia-technical modeling paradigms that drive the activity generation, and proof-of-principle results for a scenario in the Twin Cities, MN area of 2.6 M agents.

Nondestructive investigatons of the depth profile of PZT ferroelectric films

Czech Academy of Sciences Publication Activity Database

Deineka, Alexander; Glinchuk, M. D.; Jastrabík, Lubomír; Suchaneck, G.; Gerlach, G.

2001-01-01

Roč. 264, - (2001), s. 151-156 ISSN 0015-0193 R&D Projects: GA MŠk LN00A015; GA ČR GA202/00/1425 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferroelectric film * depth profile * interface Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.471, year: 2001

Excess carrier depths profiles in Cu(In,Ga)(S,Se){sub 2} absorbers from spectral photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Koenne, Nils; Knabe, Sebastian; Bauer, Gottfried H. [Institute of Physics, CvO University Oldenburg (Germany); Witte, Wolfram; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany); Meeder, Alexander [SULFURCELL Solartechnik GmbH, Berlin (Germany)

2011-07-01

The polycrystalline structure of chalcopyrite absorbers, such as Cu(In,Ga)(S,Se){sub 2} and their complex metallurgical composition results in lateral and depth dependent inhomogeneities. The spectral photoluminescence (PL) recorded from front and rear side of these chalcopyrite thin-film systems shows a distinct different behavior in particular of the high energy PL-wing which is strongly governed by absorption/emission approaching unity, as well as by re-absorption of emitted PL-photons and their depth dependent origin, say excess carrier depth profile. We define a contrast parameter for the high energy PL-yield of the fluxes recorded from front side and rear side and we proof the origin of the experimental contrast with numerical simulations of spectral PL-yields via Planck's generalized law for different depth profiles of excess carriers and band gap/absorption coefficients. By comparison of experimental contrast parameters with results from numerical simulations we conclude a set of regimes of realistic combinations of depth profiles for excess carriers and band gaps.

Electrochemical depth profiling of multilayer metallic structures: An aluminum brazing sheet

International Nuclear Information System (INIS)

Afshar, F. Norouzi; Ambat, R.; Kwakernaak, C.; Wit, J.H.W. de; Mol, J.M.C.; Terryn, H.

2012-01-01

Highlights: ► Localized electrochemical cell and glow discharge optical emission spectrometry were used. ► An electrochemical depth profile of an aluminum brazing sheet was obtained. ► The electrochemical responses were correlated to the microstructural features. - Abstract: Combinatory localized electrochemical cell and glow discharge optical emission spectrometry (GDOES) measurements were performed to obtain a thorough in depth electrochemical characterization of an aluminum brazing sheet. By defining electrochemical criteria i.e. breakdown potential, corrosion potential, cathodic and anodic reactivities, and tracking their changes as a function of depth, the evolution of electrochemical responses through out the material thickness were analyzed and correlated to the corresponding microstructural features. Polarization curves in 1 wt% NaCl solution at pH 2.8 were obtained at different depths from the surface using controlled sputtering in a glow discharge optical emission spectrometer as a sample preparation technique. The anodic and cathodic reactivity of the top surface areas were significantly higher than that of the bulk, thus indicating these areas to be more susceptible to localized attack. Consistent with this, optical microscopy and scanning electron microscope analysis revealed a relatively high density of fine intermetallic and silicon particles at these areas. The corrosion mechanism of the top layers was identified to be intergranular and pitting corrosion, while lower sensitivity to these localized attacks were detected toward the brazing sheet core. The results highlight the successful application of the electrochemical depth profiling approach in prediction of the corrosion behavior of the aluminum brazing sheet and the importance of the electrochemical activity of the outer 10 μm in controlling the corrosion performance of the aluminum brazing sheet.

Determinación de perfiles para rotores de compresores de tornillo con perfil simétrico. // Profiles determination for screw compressors rotors with symmetrical profile.

Directory of Open Access Journals (Sweden)

A. Rivera Torres

2005-05-01

Full Text Available Los compresores rotativos de tornillo, constituyeron el acontecimiento histórico más relevante del siglo XX en el campodel proceso de compresión. Dentro de los elementos fundamentales de los compresores rotativos de tornillo se encuentranlos rotores, los cuales tienen lóbulos o canales helicoidales con perfiles con formas simétricas o asimétricas.En este articulo se presenta un método para el diseño de los perfiles de rotores para compresores o bombas de tornillo, conperfil circular, a partir del empleo de una curva de cuarto orden y la condición de conjugación de los engranajes, sin incluirel empleo de cicloides en la generación de dichos perfiles, lográndose características similares a la de los perfiles SRM.Palabras claves: Rotores, rotor macho, rotor hembra._____________________________________________________________________________Abstract:Rotary screw compressors constitute the most relevant historic event of the twentieth century in the field of the process ofcompression. The most fundamental elements of rotary screw compressors are the rotors, which have helical lobes or canalsand symmetrical or asymmetrical profiles.This paper presents a method of circular profile design for screw compressors or pumps, based on fourth order curves andthe conjugation of gears, which does not include the application of cycloids in profile generation but have similarcharacteristics to SRM profiles.Key words: rotors, male rotor, female rotor.

A study of the boron profiles caused by BF2 implantation in crystalline silicon

International Nuclear Information System (INIS)

Jung, Won-Chae

2005-01-01

For integrated CMOS circuits, the one-, two-, and three-dimensional impurity distributions are very important for analyzing the devices. The one-dimensional boron profiles were measured by using secondary ion mass spectroscopy (SIMS), and simulation data were obtained by using the TSUPREM4 and the UT-Marlowe programs. The simulated data of UT-Marlowe in 1D agreed very well with the SIMS data. From the SIMS and the simulated 1D data, the four moments were calculated, these 1D data were used in the TSUPREM4 simulator to calculate of 2D profiles. For the TSUPREM4 simulations, several different models were used for the characterization of the 1D and the 2D boron profiles. A Taurus simulation tool was used to obtain the 3D boron profiles for the case of arbitrary tilting and rotation. The measured two-dimensional cross-sectional transmission electron microscope (XTEM) data obtained by using the chemical etching method matched very well with the results of the Gauss model. The vertical depths from the Gauss model and from the XTEM data were 125.8 nm and 125 nm, respectively. The channel lengths from the Gauss model and from the XTEM data were 205 nm and 233 nm, respectively. From the XTEM data and the Gauss model, the deviations of the vertical and the lateral doping distributions were 0.6 % and 12 %, respectively. The detection limit of boron measured by using the chemical-etching method was shown to be a concentration of about 1.0 X 10 16 cm -3 for a PMOS device.

SIMS applications workshop. Proceedings

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-04-01

The first ANSTO/AINSE SIMS Workshop drew together a mixture of Surface Analysis experts and Surface Analysis users with the concept that SIMS analysis has to be enfolded within the spectrum of surface analysis techniques and that the user should select the technique most applicable to the problem. With this concept in mind the program was structured as sessions on SIMS Facilities; Applications to Mineral Surfaces; Applications to Biological Systems, Applications to Surfaces as Semi- conductors, Catalysts and Surface Coatings; and Applications to Ceramics

Comparison of L-curve and LOOCV depth profiles from TAARXPS data

Energy Technology Data Exchange (ETDEWEB)

Paynter, R.W., E-mail: royston_paynter@emt.inrs.ca

2017-01-15

Highlights: • Regularized profiles were extracted from TAARXPS data. • The L-curve and LOO cross-validation were used to choose the regularization parameter. • The two parameter choice methods were compared. - Abstract: Time and angle resolved X-ray photoelectron spectroscopy (TAARXPS) data, obtained from polystyrene samples exposed to an oxygen/helium plasma, have been interpreted using 1st order Tikhonov regularization to smooth the extracted depth profiles. Two methods for the choice of the regularization parameter, namely the L-curve method and leave-one-out cross-validation (LOOCV), are compared and contrasted.

CalSimHydro Tool - A Web-based interactive tool for the CalSim 3.0 Hydrology Prepropessor

Science.gov (United States)

Li, P.; Stough, T.; Vu, Q.; Granger, S. L.; Jones, D. J.; Ferreira, I.; Chen, Z.

2011-12-01

CalSimHydro, the CalSim 3.0 Hydrology Preprocessor, is an application designed to automate the various steps in the computation of hydrologic inputs for CalSim 3.0, a water resources planning model developed jointly by California State Department of Water Resources and United States Bureau of Reclamation, Mid-Pacific Region. CalSimHydro consists of a five-step FORTRAN based program that runs the individual models in succession passing information from one model to the next and aggregating data as required by each model. The final product of CalSimHydro is an updated CalSim 3.0 state variable (SV) DSS input file. CalSimHydro consists of (1) a Rainfall-Runoff Model to compute monthly infiltration, (2) a Soil moisture and demand calculator (IDC) that estimates surface runoff, deep percolation, and water demands for natural vegetation cover and various crops other than rice, (3) a Rice Water Use Model to compute the water demands, deep percolation, irrigation return flow, and runoff from precipitation for the rice fields, (4) a Refuge Water Use Model that simulates the ponding operations for managed wetlands, and (5) a Data Aggregation and Transfer Module to aggregate the outputs from the above modules and transfer them to the CalSim SV input file. In this presentation, we describe a web-based user interface for CalSimHydro using Google Earth Plug-In. The CalSimHydro tool allows users to - interact with geo-referenced layers of the Water Budget Areas (WBA) and Demand Units (DU) displayed over the Sacramento Valley, - view the input parameters of the hydrology preprocessor for a selected WBA or DU in a time series plot or a tabular form, - edit the values of the input parameters in the table or by downloading a spreadsheet of the selected parameter in a selected time range, - run the CalSimHydro modules in the backend server and notify the user when the job is done, - visualize the model output and compare it with a base run result, - download the output SV file to be

Self Focusing SIMS: Probing thin film composition in very confined volumes

International Nuclear Information System (INIS)

Franquet, Alexis; Douhard, Bastien; Melkonyan, Davit; Favia, Paola; Conard, Thierry; Vandervorst, Wilfried

2016-01-01

that all cluster constituents originate from the same collision cascade and are emitted in close proximity (<0.5 nm). As such, the composition information becomes confined (i.e. self focused) to the areas where all constituents are simultaneously present. The examples shown in this work are based on SiGe compounds and demonstrate that it becomes feasible to determine the composition of thin films in ultra narrow trenches (down to 20 nm in width) with good accuracy and sensitivity. Whereas for the case where the probing beam is focused to a dimension smaller than the width of the structure, the analyzed volume/data point becomes very small (< a few tens of nm 3 ), the simultaneous detection of many atoms from the multiple structures in the Self Focusing SIMS approach, represents effectively a much larger volume providing the abundant sensitivity as the analyzed area is now increased up to 100 μm 2 . On the other hand, the minimum depth probed (in each trench) is still governed by the depth resolution of SIMS, hence it is similar to the one encountered in SIMS experiments performed on blanket films. This can be as small as 1–2 nm/dec and is only limited by the energy of the sputter beam.

A Conceptual Modeling for a GoldSim Program for Safety Assessment of an LILW Repository

International Nuclear Information System (INIS)

Lee, Youn Myoung; Hwang, Yong Soo; Kang, Chul Hyung; Lee, Sung Ho

2009-12-01

Modeling study and development of a total system performance assessment (TSPA) program, by which an assessment of safety and performance for a low- and intermediate-level radioactive waste disposal repository with normal or abnormal nuclide release cases associated with the various FEPs involved in the performance of the proposed repository could be made has been carrying out by utilizing GoldSim under contract with KRMC. The report deals with a detailed conceptual modeling scheme by which a GoldSim program modules, all of which are integrated into a TSPA program as well as the input data set currently available. In-depth system models that are conceptually and rather practically described and then ready for implementing into a GoldSim program are introduced with plenty of illustrative conceptual models and sketches. The GoldSim program that will be finally developed through this project is expected to be successfully applied to the post closure safety assessment required both for the LILW repository and pyro processed repository by the regulatory body with both increased practicality and much reduced uncertainty

Depth profiling of boron implanted silicon by positron beam

International Nuclear Information System (INIS)

Oevuenc, S.

2004-01-01

Positron depth profiling analyses of low energy implants of silicon aim to observe tbe structure and density of the vacancies generating by implantation and the effect of annealing. This work present the results to several set of data starting S and W parameters. Boron implanted Silicon samples with different implantation energies,20,22,24,and 26 keV are analyzed by Slow positron beam (0-40 keV and 10 5 e + /s )(Variable Energy Positron) at the Positron Centre Delf-HOLLAND

Chern–Simons theory in SIM(1) superspace

International Nuclear Information System (INIS)

Vohánka, Jiří; Faizal, Mir

2015-01-01

In this paper, we will analyze a three-dimensional supersymmetric Chern–Simons theory in SIM(1) superspace formalism. The breaking of the Lorentz symmetry down to the SIM(1) symmetry breaks half the supersymmetry of the Lorentz invariant theory. So, the supersymmetry of the Lorentz invariant Chern–Simons theory with N=1 supersymmetry will break down to N=1/2 supersymmetry, when the Lorentz symmetry is broken down to the SIM(1) symmetry. First, we will write the Chern–Simons action using SIM(1) projections of N=1 superfields. However, as the SIM(1) transformations of these projections are very complicated, we will define SIM(1) superfields which transform simply under SIM(1) transformations. We will then express the Chern–Simons action using these SIM(1) superfields. Furthermore, we will analyze the gauge symmetry of this Chern–Simons theory. This is the first time that a Chern–Simons theory with N=1/2 supersymmetry will be constructed on a manifold without a boundary

Breadth and Depth of Vocabulary Knowledge and Their Effects on L2 Vocabulary Profiles

Science.gov (United States)

Bardakçi, Mehmet

2016-01-01

Breadth and depth of vocabulary knowledge have been studied from many different perspectives, but the related literature lacks serious studies dealing with their effects on vocabulary profiles of EFL learners. In this paper, with an aim to fill this gap, the relative effects of breadth and depth of vocabulary knowledge on L2 vocabulary profiles…

Depth profiles of H and O in thin films of a-Si:H

International Nuclear Information System (INIS)

Sie, S.H.; Ryan, C.J.

1985-01-01

Detailed depth profiles of hydrogen and oxygen were measured, in thin film samples of a-Si:H produced under varying conditions, using the reaction 1 H( 19 F,α γ) 16 O in the vicinity of the resonance at E( 19 F) = 6.417 MeV to profile hydrogen, and resonant elastic α scattering near the resonance at Eα = 3.0359 MeV to profile oxygen. Contrasting results reflecting the different fabrication conditions were obtained and these were correlated with the measured electrical properties

Opto-thermal moisture content and moisture depth profile measurements in organic materials

NARCIS (Netherlands)

Xiao, P.; Guo, X.; Cui, Y.Y.; Imhof, R.; Bicanic, D.D.

2004-01-01

Opto-thermal transient emission radiometry(OTTER) is a infrared remote sensing technique, which has been successfully used in in vivo skin moisture content and skin moisture depth profiling measurements.In present paper, we extend this moisture content measurement capability to analyze the moisture

Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen

International Nuclear Information System (INIS)

Ferrari, S.; Perego, M.; Fanciulli, M.

2002-01-01

We present a methodology for the quantitative estimation of nitrogen in ultrathin oxynitrides by means of time of flight secondary ion mass spectrometry (TOF-SIMS) and x-ray photoelectron spectroscopy (XPS). We consider an innovative approach to TOF-SIMS depth profiling, by elemental distribution of single species as sum of peaks containing such species. This approach is very efficient in overcoming matrix effect arising when quantifying elements were distributed in silicon and silicon oxide. We use XPS to calibrate TOF-SIMS and to obtain quantitative information on nitrogen distribution in oxynitride thin layers. In the method we propose we process TOF-SIMS and XPS data simultaneously to obtain a quantitative depth profile

Development of GoldSim Program Template for Safety Assessment of an LILW Disposal

International Nuclear Information System (INIS)

Lee, Youn Myoung; Jeong, Jong Tae

2010-08-01

A modeling study and development of a methodology, by which an assessment of safety and performance for a low- and intermediate level radioactive waste (LILW) repository could be effectively made has been carried out. With normal or abnormal nuclide release cases associated with the various FEPs and scenarios involved in the performance of the proposed repository in view of nuclide transport and transfer both in geosphere and biosphere, a total system performance assessment (TSPA) program has been developed by utilizing a commercial development tool program, GoldSim. The report especially deals much with a detailed conceptual modeling scheme by which a GoldSim program modules, all of which are integrated into a TSPA program template were able to be developed. Degradation effects of the near-field such manmade barriers as waste container and the silo on the performance of the repository are also modeled and quantitatively and deterministically/probabilistically evaluated with input data set currently available or assumed. In-depth system models that are conceptually and rather practically described and then ready for implementing into a GoldSim TSPA program are introduced with illustrations. The GoldSim TSPA template program developed through this study is expected to be successfully applied to the post closure safety assessment required for an LILW repository such as Gyeongju repository

Chemometric characterization of soil depth profiles

International Nuclear Information System (INIS)

Krieg, M.; Einax, J.

1994-01-01

The application of multivariate-statistical methods to the description of the metal distribution in soil depth profiles is shown. By means of cluster analysis, it is possible to get a first overview of the main differences in the metal status of the soil horizons. In case of anthropogenic soil pollution or geogenic enrichment, cluster analysis was able to detect the extent of the polluted soil layer or the different geological layers. The results of cluster analysis can be confirmed by means of multidimensional variance and discriminant analysis. Methods of discriminant analysis can also be used as a tool to determine the optimum number of variables which has to be measured for the classification of unknown soil samples into different pollution levels. Factor analysis yields an identification of not directly observable relationships between the variables. With additional knowledge about the orographic situation of the area and the probable sources of emission the factor loadings give information on the immission structure at the sampling location. (orig.)

Molar concentration-depth profiles at the solution surface of a cationic surfactant reconstructed with angle resolved X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Wang Chuangye; Morgner, Harald

2011-01-01

In the current work, we first reconstructed the molar fraction-depth profiles of cation and anion near the surface of tetrabutylammonium iodide dissolved in formamide by a refined calculation procedure, based on angle resolved X-ray photoelectron spectroscopy experiments. In this calculation procedure, both the transmission functions of the core levels and the inelastic mean free paths of the photoelectrons have been taken into account. We have evaluated the partial molar volumes of surfactant and solvent by the densities of such solutions with different bulk concentrations. With those partial molar volumes, the molar concentration-depth profiles of tetrabutylammonium ion and iodide ion were determined. The surface excesses of both surfactant ions were then achieved directly by integrating these depth profiles. The anionic molar concentration-depth profiles and surface excesses have been compared with their counterparts determined by neutral impact ion scattering spectroscopy. The comparisons exhibit good agreements. Being capable of determining molar concentration-depth profiles of surfactant ions by core levels with different kinetic energies may extend the applicable range of ARXPS in investigating solution surfaces.

A comparison of mixing depths observed by ground-based wind profilers and an airborne lidar

Energy Technology Data Exchange (ETDEWEB)

White, A.B.; Senff, C. [Univ. of Colorado/NOAA Environmental Technology Lab., Cooperative Inst. for Research in Environmental Sciences, Boulder, CO (United States); Banta, R.M. [NOAA Environmental Technology Lab., Boulder, CO (United States)

1997-10-01

The mixing depth is one of the most important parameters in air pollution studies because it determines the vertical extent of the `box` in which pollutants are mixed and dispersed. During the 1995 Southern Oxidants Study (SOS95), scientists from the National Oceanic and Atmospheric Administration Environmental Technology Laboratory (NOAA/ETL) deployed four 915-MHz boundary-layer radar/wind profilers (hereafter radars) in and around the Nashville, Tennessee metropolitan area. Scientists from NOAA/ETL also operated an ultraviolet differential absorption lidar (DIAL) onboard a CASA-212 aircraft. Profiles from radar and DIAL can be used to derive estimates of the mixing depth. The methods used for both instruments are similar in that they depend on information derived from the backscattered power. However, different scattering mechanisms for the radar and DIAL mean that different tracers of mixing depth are measured. In this paper we compare the mixing depth estimates obtained from the radar and DIAL and discuss the similarities and differences that occur. (au)

Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool

International Nuclear Information System (INIS)

Jeynes, C; Barradas, N P; Marriott, P K; Boudreault, G; Jenkin, M; Wendler, E; Webb, R P

2003-01-01

Rutherford backscattering spectrometry (RBS) and related techniques have long been used to determine the elemental depth profiles in films a few nanometres to a few microns thick. However, although obtaining spectra is very easy, solving the inverse problem of extracting the depth profiles from the spectra is not possible analytically except for special cases. It is because these special cases include important classes of samples, and because skilled analysts are adept at extracting useful qualitative information from the data, that ion beam analysis is still an important technique. We have recently solved this inverse problem using the simulated annealing algorithm. We have implemented the solution in the 'IBA DataFurnace' code, which has been developed into a very versatile and general new software tool that analysts can now use to rapidly extract quantitative accurate depth profiles from real samples on an industrial scale. We review the features, applicability and validation of this new code together with other approaches to handling IBA (ion beam analysis) data, with particular attention being given to determining both the absolute accuracy of the depth profiles and statistically accurate error estimates. We include examples of analyses using RBS, non-Rutherford elastic scattering, elastic recoil detection and non-resonant nuclear reactions. High depth resolution and the use of multiple techniques simultaneously are both discussed. There is usually systematic ambiguity in IBA data and Butler's example of ambiguity (1990 Nucl. Instrum. Methods B 45 160-5) is reanalysed. Analyses are shown: of evaporated, sputtered, oxidized, ion implanted, ion beam mixed and annealed materials; of semiconductors, optical and magnetic multilayers, superconductors, tribological films and metals; and of oxides on Si, mixed metal silicides, boron nitride, GaN, SiC, mixed metal oxides, YBCO and polymers. (topical review)

Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method

Energy Technology Data Exchange (ETDEWEB)

Saitoh, Kazunari; Takahashi, Yoshihiro; Ohnishi, Kazunori [Nihon Univ., Tokyo (Japan). Coll. of Science and Technology; Yoshikawa, Masahito; Ohshima, Takeshi; Itoh, Hisayoshi; Nashiyama, Isamu

1997-03-01

In this paper, we propose a method to evaluate the depth profile of trapped charges in an oxide layer on SiC. Using this method, 6H-SiC MOS structures with different oxide thickness were fabricated on the same substrate under the same oxidation condition, and the depth profile of oxide-trapped charges before and after {sup 60}Co-gamma ray irradiation were obtained. It is found, from the depth profiling, that the trapping mechanism of electrons and holes in the oxide strongly depends on the bias polarity during irradiation, and these charges are trapped near 6H-SiC/SiO{sub 2} interface. We believe that this method is very useful for estimation of the oxide-trapped charges in 6H-SiC MOS structures. (author)

Sequencing Information Management System (SIMS). Final report

Energy Technology Data Exchange (ETDEWEB)

Fields, C.

1996-02-15

A feasibility study to develop a requirements analysis and functional specification for a data management system for large-scale DNA sequencing laboratories resulted in a functional specification for a Sequencing Information Management System (SIMS). This document reports the results of this feasibility study, and includes a functional specification for a SIMS relational schema. The SIMS is an integrated information management system that supports data acquisition, management, analysis, and distribution for DNA sequencing laboratories. The SIMS provides ad hoc query access to information on the sequencing process and its results, and partially automates the transfer of data between laboratory instruments, analysis programs, technical personnel, and managers. The SIMS user interfaces are designed for use by laboratory technicians, laboratory managers, and scientists. The SIMS is designed to run in a heterogeneous, multiplatform environment in a client/server mode. The SIMS communicates with external computational and data resources via the internet.

The impact of molecular emission in compositional depth profiling using Glow Discharge-Optical Emission Spectroscopy

International Nuclear Information System (INIS)

Bengtson, Arne

2008-01-01

The scope of this paper is to investigate and discuss how molecular emission can affect elemental analysis in glow discharge optical emission (GD-OES), particularly in compositional depth profiling (CDP) applications. Older work on molecular emission in glow discharges is briefly reviewed, and the nature of molecular emission spectra described. Work on the influence of hydrogen in the plasma, in particular elevated background due to a continuum spectrum, is discussed. More recent work from sputtering of polymers and other materials with a large content of light elements in a Grimm type source is reviewed, where substantial emission has been observed from several light diatomic molecules (CO, CH, OH, NH, C 2 ). It is discussed how the elevated backgrounds from such molecular emission can lead to significant analytical errors in the form of 'false' depth profile signals of several atomic analytical lines. Results from a recent investigation of molecular emission spectra from mixed gases in a Grimm type glow discharge are presented. An important observation is that dissociation and subsequent recombination processes occur, leading to formation of molecular species not present in the original plasma gas. Experimental work on depth profiling of a polymer coating and a thin silicate film, using a spectrometer equipped with channels for molecular emission lines, is presented. The results confirm that molecular emission gives rise to apparent depth profiles of elements not present in the sample. The possibilities to make adequate corrections for such molecular emission in CDP of organic coatings and very thin films are discussed

The impact of molecular emission in compositional depth profiling using Glow Discharge-Optical Emission Spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Bengtson, Arne [Corrosion and Metals Research Institute, Dr. Kristinas vaeg 48, Stockholm (Sweden)], E-mail: arne.bengtson@kimab.com

2008-09-15

The scope of this paper is to investigate and discuss how molecular emission can affect elemental analysis in glow discharge optical emission (GD-OES), particularly in compositional depth profiling (CDP) applications. Older work on molecular emission in glow discharges is briefly reviewed, and the nature of molecular emission spectra described. Work on the influence of hydrogen in the plasma, in particular elevated background due to a continuum spectrum, is discussed. More recent work from sputtering of polymers and other materials with a large content of light elements in a Grimm type source is reviewed, where substantial emission has been observed from several light diatomic molecules (CO, CH, OH, NH, C{sub 2}). It is discussed how the elevated backgrounds from such molecular emission can lead to significant analytical errors in the form of 'false' depth profile signals of several atomic analytical lines. Results from a recent investigation of molecular emission spectra from mixed gases in a Grimm type glow discharge are presented. An important observation is that dissociation and subsequent recombination processes occur, leading to formation of molecular species not present in the original plasma gas. Experimental work on depth profiling of a polymer coating and a thin silicate film, using a spectrometer equipped with channels for molecular emission lines, is presented. The results confirm that molecular emission gives rise to apparent depth profiles of elements not present in the sample. The possibilities to make adequate corrections for such molecular emission in CDP of organic coatings and very thin films are discussed.

BioFET-SIM

DEFF Research Database (Denmark)

Hediger, M. R.; Martinez, K. L.; Nygård, J.

2013-01-01

Biosensors based on nanowire field effect transistor (FET) have received much attention in recent years as a way to achieve ultra-sensitive and label-free sensing of molecules of biological interest. The BioFET-SIM computer model permits the analysis and interpretation of experimental sensor...... signals through its web-based interface www.biofetsim.org. The model also allows for predictions of the effects of changes in the experimental setup on the sensor signal. After an introduction to nanowire-based FET biosensors, this chapter reviews the theoretical basis of BioFET-SIM models describing both...... single and multiple charges on the analyte. Afterwards the usage of the interface and its relative command line version is briefly shown. Finally, possible applications of the BioFET-SIM model are presented. Among the possible uses of the interface, the effects on the predicted signal of pH, buffer ionic...

Photothermal depth profiling: Comparison between genetic algorithms and thermal wave backscattering (abstract)

Science.gov (United States)

Li Voti, R.; Sibilia, C.; Bertolotti, M.

2003-01-01

Photothermal depth profiling has been the subject of many papers in the last years. Inverse problems on different kinds of materials have been identified, classified, and solved. A first classification has been done according to the type of depth profile: the physical quantity to be reconstructed is the optical absorption in the problems of type I, the thermal effusivity for type II, and both of them for type III. Another classification may be done depending on the time scale of the pump beam heating (frequency scan, time scan), or on its geometrical symmetry (one- or three-dimensional). In this work we want to discuss two different approaches, the genetic algorithms (GA) [R. Li Voti, C. Melchiorri, C. Sibilia, and M. Bertolotti, Anal. Sci. 17, 410 (2001); R. Li Voti, Proceedings, IV Int. Workshop on Advances in Signal Processing for Non-Destructive Evaluation of Materials, Quebec, August 2001] and the thermal wave backscattering (TWBS) [R. Li Voti, G. L. Liakhou, S. Paoloni, C. Sibilia, and M. Bertolotti, Anal. Sci. 17, 414 (2001); J. C. Krapez and R. Li Voti, Anal. Sci. 17, 417 (2001)], showing their performances and limits of validity for several kinds of photothermal depth profiling problems: The two approaches are based on different mechanisms and exhibit obviously different features. GA may be implemented on the exact heat diffusion equation as follows: one chromosome is associated to each profile. The genetic evolution of the chromosome allows one to find better and better profiles, eventually converging towards the solution of the inverse problem. The main advantage is that GA may be applied to any arbitrary profile, but several disadvantages exist; for example, the complexity of the algorithm, the slow convergence, and consequently the computer time consumed. On the contrary, TWBS uses a simplified theoretical model of heat diffusion in inhomogeneous materials. According to such a model, the photothermal signal depends linearly on the thermal effusivity

Compositional depth profiles of the type 316 stainless steel undergone the corrosion in liquid lithium using laser-induced breakdown spectroscopy

Science.gov (United States)

Li, Ying; Ke, Chuan; Liu, Xiang; Gou, Fujun; Duan, Xuru; Zhao, Yong

2017-12-01

Liquid metal lithium cause severe corrosion on the surface of metal structure material that used in the blanket and first wall of fusion device. Fast and accurate compositional depth profile measurement for the boundary layer of the corroded specimen will reveal the clues for the understanding and evaluation of the liquid lithium corrosion process as well as the involved corrosion mechanism. In this work, the feasibility of laser-induced breakdown spectroscopy for the compositional depth profile analysis of type 316 stainless steel which was corroded by liquid lithium in certain conditions was demonstrated. High sensitivity of LIBS was revealed especially for the corrosion medium Li in addition to the matrix elements of Fe, Cr, Ni and Mn by the spectral analysis of the plasma emission. Compositional depth profile analysis for the concerned elements which related to corrosion was carried out on the surface of the corroded specimen. Based on the verified local thermodynamic equilibrium shot-by-shot along the depth profile, the matrix effect was evaluated as negligible by the extracted physical parameter of the plasmas generated by each laser pulse in the longitudinal depth profile. In addition, the emission line intensity ratios were introduced to further reduce the impact on the emission line intensity variations arise from the strong inhomogeneities on the corroded surface. Compositional depth profiles for the matrix elements of Fe, Cr, Ni, Mn and the corrosion medium Li were constructed with their measured relative emission line intensities. The distribution and correlations of the concerned elements in depth profile may indicate the clues to the complicated process of composition diffusion and mass transfer. The results obtained demonstrate the potentiality of LIBS as an effective technique to perform spectrochemical measurement in the research fields of liquid metal lithium corrosion.

Thermal Depth Profiling Reconstruction by Multilayer Thermal Quadrupole Modeling and Particle Swarm Optimization

International Nuclear Information System (INIS)

Zhao-Jiang, Chen; Shu-Yi, Zhang

2010-01-01

A new hybrid inversion method for depth profiling reconstruction of thermal conductivities of inhomogeneous solids is proposed based on multilayer quadrupole formalism of thermal waves, particle swarm optimization and sequential quadratic programming. The reconstruction simulations for several thermal conductivity profiles are performed to evaluate the applicability of the method. The numerical simulations demonstrate that the precision and insensitivity to noise of the inversion method are very satisfactory. (condensed matter: structure, mechanical and thermal properties)

Measurements of europium-152 depth profile of stone embankments exposed the Nagasaki atomic bomb for neutron spectrum analysis

International Nuclear Information System (INIS)

Tatsumi-Miyajima, Junko; Shimasaki, Tatsuya; Okajima, Shunzo; Takada, Jitsuya; Yoshida, Masahiro; Takao, Hideaki; Okumura, Yutaka; Nakazawa, Masaharu.

1990-01-01

Quantitative measurement of neutron-induced radionuclide of 152 Eu in rocks near the hypocenter (ground center of the atomic bomb explosion) in Nagasaki was performed to obtain the depth profiles and calculate the neutron energy spectrum. Core samples were drilled and taken from the stone embankments on both sides of river within a radius of 500 m from the hypocenter. After cutting each core into about 27 mm-thick sections, each section was measured its gamma-ray spectrum with a pure germanium semiconductor detector and analyzed a content of natural europium by the activation method. The highest value 8.0 x 10 -2 Bq/μg of 152 Eu at the time of the blast was obtained from the surface plates of rock cores collected near the hypocenter. The surface activity of cores was reduced with increasing the slant distances from the hypocenter. The slopes of the depth profiles were similar among samples taken from the same location. In order to analyze the depth profile of 152 Eu activity in rock andesite, experiments using a fast neutron reactor and thermal neutron reactor were carried out. Comparing the measurements on the A-bomb exposure rock with the simulated results at the reactors, among the experiments, the depth profile using the neutron moderator of 10 mm polyethylene was closed to that obtained from the A-bomb exposed samples. The experiment of thermal neutron incidence only could not reproduce the profiles from the A-bomb exposed samples. This fact indicates that the depth profiles of 152 Eu in rock exposed to the A-bomb include valuable information concerning the neutron spectrum and intensity. (author)

Quantitative considerations in medium energy ion scattering depth profiling analysis of nanolayers

Energy Technology Data Exchange (ETDEWEB)

Zalm, P.C.; Bailey, P. [International Institute for Accelerator Applications, University of Huddersfield, Queensgate, Huddersfield HD1 3DH (United Kingdom); Reading, M.A. [Physics and Materials Research Centre, University of Salford, Salford M5 4WT (United Kingdom); Rossall, A.K. [International Institute for Accelerator Applications, University of Huddersfield, Queensgate, Huddersfield HD1 3DH (United Kingdom); Berg, J.A. van den, E-mail: j.vandenberg@hud.ac.uk [International Institute for Accelerator Applications, University of Huddersfield, Queensgate, Huddersfield HD1 3DH (United Kingdom)

2016-11-15

The high depth resolution capability of medium energy ion scattering (MEIS) is becoming increasingly relevant to the characterisation of nanolayers in e.g. microelectronics. In this paper we examine the attainable quantitative accuracy of MEIS depth profiling. Transparent but reliable analytical calculations are used to illustrate what can ultimately be achieved for dilute impurities in a silicon matrix and the significant element-dependence of the depth scale, for instance, is illustrated this way. Furthermore, the signal intensity-to-concentration conversion and its dependence on the depth of scattering is addressed. Notably, deviations from the Rutherford scattering cross section due to screening effects resulting in a non-coulombic interaction potential and the reduction of the yield owing to neutralization of the exiting, backscattered H{sup +} and He{sup +} projectiles are evaluated. The former mainly affects the scattering off heavy target atoms while the latter is most severe for scattering off light target atoms and can be less accurately predicted. However, a pragmatic approach employing an extensive data set of measured ion fractions for both H{sup +} and He{sup +} ions scattered off a range of surfaces, allows its parameterization. This has enabled the combination of both effects, which provides essential information regarding the yield dependence both on the projectile energy and the mass of the scattering atom. Although, absolute quantification, especially when using He{sup +}, may not always be achievable, relative quantification in which the sum of all species in a layer adds up to 100%, is generally possible. This conclusion is supported by the provision of some examples of MEIS derived depth profiles of nanolayers. Finally, the relative benefits of either using H{sup +} or He{sup +} ions are briefly considered.

siMS Score: Simple Method for Quantifying Metabolic Syndrome.

Science.gov (United States)

Soldatovic, Ivan; Vukovic, Rade; Culafic, Djordje; Gajic, Milan; Dimitrijevic-Sreckovic, Vesna

2016-01-01

To evaluate siMS score and siMS risk score, novel continuous metabolic syndrome scores as methods for quantification of metabolic status and risk. Developed siMS score was calculated using formula: siMS score = 2*Waist/Height + Gly/5.6 + Tg/1.7 + TAsystolic/130-HDL/1.02 or 1.28 (for male or female subjects, respectively). siMS risk score was calculated using formula: siMS risk score = siMS score * age/45 or 50 (for male or female subjects, respectively) * family history of cardio/cerebro-vascular events (event = 1.2, no event = 1). A sample of 528 obese and non-obese participants was used to validate siMS score and siMS risk score. Scores calculated as sum of z-scores (each component of metabolic syndrome regressed with age and gender) and sum of scores derived from principal component analysis (PCA) were used for evaluation of siMS score. Variants were made by replacing glucose with HOMA in calculations. Framingham score was used for evaluation of siMS risk score. Correlation between siMS score with sum of z-scores and weighted sum of factors of PCA was high (r = 0.866 and r = 0.822, respectively). Correlation between siMS risk score and log transformed Framingham score was medium to high for age groups 18+,30+ and 35+ (0.835, 0.707 and 0.667, respectively). siMS score and siMS risk score showed high correlation with more complex scores. Demonstrated accuracy together with superior simplicity and the ability to evaluate and follow-up individual patients makes siMS and siMS risk scores very convenient for use in clinical practice and research as well.

Design and construction of the facility for neutron depth profiling in research reactor RECH-1

International Nuclear Information System (INIS)

Mutis P, Octavio; Navarro A, Gustavo; Henriquez A, Carlos; Pereda B, Claudio

2002-01-01

Here is described the experimental facility for Neutron Depth Profiling, NDP, constructed at the CCHEN laboratories, as well as some general aspects of the technique. It is also shown applications to the concentration analysis of 10 B and 6 Li as a function of depth for borophosphosilicate glass, BPSG, and for a thick sinter of 6 Li in a zinc-nickel-manganese oxide. Achieved depth resolution is comparable to that obtained in reference advanced laboratories. (author)

Development of Standards for NanoSIMS Analyses of Biological Materials

Energy Technology Data Exchange (ETDEWEB)

Davission, M L; Weber, P K; Pett-Ridge, J; Singer, S

2008-07-31

distribution in the matrix was similar to that observed in spores. In experiments with Mo on humic acid, homogeneity was achieved and a sensitivity factor relative to C was determined. For synthetic material, we successfully prepared polyacrylic acid containing complexed elements of Mo, Ca, Sr, and Ba at low abundance. These were prepared as aqueous mixtures of dissolved elements and polyacrylic resin, followed by thin film drying. The Mo was homogeneously distributed and yielded a relative sensitivity factor nearly identical to that calculated for humic acid. This approach shows great promise for most water soluble metals. Poly(methacrylate) thin films were prepared that contained different low-level concentrations of Si introduced as a silane compound. Although homogeneity was not fully achieved, the analytical results did validate our previous quantitative methodology for Si. In addition, Commercial plastics were also examined for suitability for F and Cl. We found food-grade polyvinyl tubing produced high precision Cl determinations. For ion implantation, we used epoxy as the substrate and successfully extracted depth profiles and sensitivity factors for F and Cu.

Quantitative determination of uranium by SIMS

International Nuclear Information System (INIS)

Kuruc, J.; Harvan, D.; Galanda, D.; Matel, L.; Aranyosiova, M.; Velic, D.

2008-01-01

The paper presents results of quantitative measurements of uranium-238 by secondary ion mass spectrometry (SIMS) with using alpha spectrometry as well as complementary technique. Samples with specific activity of uranium-238 were prepared by electrodeposition from aqueous solution of UO 2 (NO 3 ) 2 ·6H 2 O. We tried to apply SIMS to quantitative analysis and search for correlation between intensity obtained from SIMS and activity of uranium-238 in dependence on the surface's weight and possibility of using SIMS in quantitative analysis of environmental samples. The obtained results and correlations as well as results of two real samples measurements are presented in this paper. (authors)

siMS Score: Simple Method for Quantifying Metabolic Syndrome

OpenAIRE

Soldatovic, Ivan; Vukovic, Rade; Culafic, Djordje; Gajic, Milan; Dimitrijevic-Sreckovic, Vesna

2016-01-01

Objective To evaluate siMS score and siMS risk score, novel continuous metabolic syndrome scores as methods for quantification of metabolic status and risk. Materials and Methods Developed siMS score was calculated using formula: siMS score = 2*Waist/Height + Gly/5.6 + Tg/1.7 + TAsystolic/130?HDL/1.02 or 1.28 (for male or female subjects, respectively). siMS risk score was calculated using formula: siMS risk score = siMS score * age/45 or 50 (for male or female subjects, respectively) * famil...

Deconvolution of charged particle spectra from neutron depth profiling using Simplex method

Czech Academy of Sciences Publication Activity Database

Hnatowicz, Vladimír; Vacík, Jiří; Fink, Dietmar

2010-01-01

Roč. 81, č. 7 (2010), 073906/1-073906/7 ISSN 0034-6748 R&D Projects: GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : neutron depth profiling * Simplex method * NDP Subject RIV: BG - Nuclear , Atomic and Molecular Physics, Colliders Impact factor: 1.598, year: 2010

Hemispheric aerosol vertical profiles: anthropogenic impacts on optical depth and cloud nuclei.

Science.gov (United States)

Clarke, Antony; Kapustin, Vladimir

2010-09-17

Understanding the effect of anthropogenic combustion upon aerosol optical depth (AOD), clouds, and their radiative forcing requires regionally representative aerosol profiles. In this work, we examine more than 1000 vertical profiles from 11 major airborne campaigns in the Pacific hemisphere and confirm that regional enhancements in aerosol light scattering, mass, and number are associated with carbon monoxide from combustion and can exceed values in unperturbed regions by more than one order of magnitude. Related regional increases in a proxy for cloud condensation nuclei (CCN) and AOD imply that direct and indirect aerosol radiative effects are coupled issues linked globally to aged combustion. These profiles constrain the influence of combustion on regional AOD and CCN suitable for challenging climate model performance and informing satellite retrievals.

Sims, Christopher Albert (born 1942)

NARCIS (Netherlands)

Boumans, M.; Durlauf, S.N.; Blume, L.E.

2012-01-01

Christopher Sims is one of the leaders in time-series econometrics and empirical macroeconomics and is well known for introducing the VAR approach to econometrics and macroeconomic modelling. Sims' main contribution to empirical macroeconomics was to show how macro-econometric modeling should be

Bio-SimVerb and Bio-SimLex: wide-coverage evaluation sets of word similarity in biomedicine.

Science.gov (United States)

Chiu, Billy; Pyysalo, Sampo; Vulić, Ivan; Korhonen, Anna

2018-02-05

Word representations support a variety of Natural Language Processing (NLP) tasks. The quality of these representations is typically assessed by comparing the distances in the induced vector spaces against human similarity judgements. Whereas comprehensive evaluation resources have recently been developed for the general domain, similar resources for biomedicine currently suffer from the lack of coverage, both in terms of word types included and with respect to the semantic distinctions. Notably, verbs have been excluded, although they are essential for the interpretation of biomedical language. Further, current resources do not discern between semantic similarity and semantic relatedness, although this has been proven as an important predictor of the usefulness of word representations and their performance in downstream applications. We present two novel comprehensive resources targeting the evaluation of word representations in biomedicine. These resources, Bio-SimVerb and Bio-SimLex, address the previously mentioned problems, and can be used for evaluations of verb and noun representations respectively. In our experiments, we have computed the Pearson's correlation between performances on intrinsic and extrinsic tasks using twelve popular state-of-the-art representation models (e.g. word2vec models). The intrinsic-extrinsic correlations using our datasets are notably higher than with previous intrinsic evaluation benchmarks such as UMNSRS and MayoSRS. In addition, when evaluating representation models for their abilities to capture verb and noun semantics individually, we show a considerable variation between performances across all models. Bio-SimVerb and Bio-SimLex enable intrinsic evaluation of word representations. This evaluation can serve as a predictor of performance on various downstream tasks in the biomedical domain. The results on Bio-SimVerb and Bio-SimLex using standard word representation models highlight the importance of developing dedicated

Secondary ion mass spectrometry (SIMS)

International Nuclear Information System (INIS)

Grasserbauer, M.

1986-01-01

After an introductory chapter the subject is covered under the following headings: principles and physical fundamentals, measurement equipment, analytic characteristics, sample preparation, special measuring techniques for insulators, analytic procedures and applications of SIMS, summarized evaluation of SIMS. 108 references, 60 figures, and 13 tables are included

Experimental analysis of bruises in human volunteers using radiometric depth profiling and diffuse reflectance spectroscopy

Science.gov (United States)

Vidovič, Luka; Milanič, Matija; Majaron, Boris

2015-07-01

We combine pulsed photothermal radiometry (PPTR) depth profiling with diffuse reflectance spectroscopy (DRS) measurements for a comprehensive analysis of bruise evolution in vivo. While PPTR enables extraction of detailed depth distribution and concentration profiles of selected absorbers (e.g. melanin, hemoglobin), DRS provides information in a wide range of visible wavelengths and thus offers an additional insight into dynamics of the hemoglobin degradation products. Combining the two approaches enables us to quantitatively characterize bruise evolution dynamics. Our results indicate temporal variations of the bruise evolution parameters in the course of bruise self-healing process. The obtained parameter values and trends represent a basis for a future development of an objective technique for bruise age determination.

Depth profile analysis of electrodeposited nanoscale multilayers by Secondary Neutral Mass Spectrometry (SNMS)

International Nuclear Information System (INIS)

Katona, G.L.; Berenyi, Z.; Vad, K.; Peter, L.

2006-01-01

Complete text of publication follows. Nanoscale multilayers have been in the focus of research since the discovery of the giant magnetoresistance (GMR) effect in this family of nanostructures. The first observation of GMR on sputtered magnetic/non-magnetic multilayers was followed by the detection of the same effect in electrodeposited Co-Ni-Cu/Cu multilayers within half a decade. Electrodeposition has long been considered as an inexpensive alternative of the high-vacuum methods to produce multilayers with GMR, although the GMR effect observed for electrodeposited multilayers is usually inferior to multilayers produced by physical methods. Electrochemistry appears to be an exclusive technology to produce multilayered nanowires by using porous templates. In spite of the large number of papers about the multilayers themselves, data on the depth profile of electrodeposited multilayer samples are very scarce. It has long been known that the simultaneous electrodeposition of the iron group metals takes place in the so-called anomalous manner. The diagnostic criterion of the anomalous codeposition is that the metallic component of lower standard potential (the Co in the case of Ni/Co) can be discharged together with the more noble one (Ni) at potentials where the less noble component (Co) alone cannot be deposited onto a substrate composed of the parent metal; moreover, the less noble metal (Co) is deposited preferentially. We have investigated the composition gradient along the growth direction of electrodeposited Co/Cu and CoNiCu/Cu multilayers films using SNMS. Samples were electrodeposited using the single bath method. Commercial Cu sheets and an Cr/Cu layer evaporated onto Si (111) surface were used as substrates with high and low roughness, respectively. The depth profiles of the samples were recorded using SNMS (INA-X, Specs GmbH, Berlin) in the Direct Bombardment Mode. Depth profile analysis of electrodeposited magnetic/nonmagnetic layered structures on

Ion bombardment techniques - recent developments in SIMS

International Nuclear Information System (INIS)

Konarski, P.; Miśnik, M.

2013-01-01

We present a short review of cluster ion bombardment technique recently applied in SIMS. Many advantages of using cluster ion beams are specified over monoatomic ion species. Cluster ions open really new perspectives especially in organic based structures analysis. Nevertheless cluster ions are not the perfect solution and still new ideas of ion erosion in SIMS are needed. Another issue discussed is 'storing matter' technique applied for quantitative analysis in SIMS. Simple idea of sputter deposition of eroded material onto rotating substrate and then analysing the stored material allows to avoid strong matrix effects in SIMS. Presented are the results performed in Tele and Radio Research Institute, Warszawa, Poland. These are the first results of ‘storing matter’ technique performed in one analytical chamber of SIMS instrument. (authors)

Depth profile and interface analysis in the nm-range

International Nuclear Information System (INIS)

Oswald, S.; Reiche, R.; Zier, M.; Baunack, S.; Wetzig, K.

2005-01-01

In modern technology, thin films are shrinking more and more to a thickness of few nanometers. Analytical investigations of such thin films using the traditional sputter depth profiling, sputtering in combination with surface-analytical techniques, have limitations due to physical effects especially for very thin films. These limitations are pointed out and some alternatives are discussed. Non-destructive analysis with angle-resolved X-ray photoelectron spectroscopy is demonstrated to be a useful method for such investigations. Both qualitative and quantitative results can be obtained even for complex layer structures. Nevertheless, there are also limitations of this method and some alternatives or complementary methods are considered

Mobile depth profiling and sub-surface imaging techniques for historical paintings—A review

International Nuclear Information System (INIS)

Alfeld, Matthias; Broekaert, José A.C.

2013-01-01

Hidden, sub-surface paint layers and features contain valuable information for the art-historical investigation of a painting's past and for its conservation for coming generations. The number of techniques available for the study of these features has been considerably extended in the last decades and established techniques have been refined. This review focuses on mobile non-destructive subsurface imaging and depth profiling techniques, which allow for the in-situ investigation of easel paintings, i.e. paintings on a portable support. Among the techniques discussed are: X-ray radiography and infrared reflectography, which are long established methods and are in use for several decades. Their capabilities of element/species specific imaging have been extended by the introduction of energy/wavelength resolved measurements. Scanning macro-X-ray fluorescence analysis made it for the first time possible to acquire elemental distribution images in-situ and optical coherence tomography allows for the non-destructive study the surface paint layers in virtual cross-sections. These techniques and their variants are presented next to other techniques, such as Terahertz imaging, Nuclear Magnetic Resonance depth profiling and established techniques for non destructive testing (thermography, ultrasonic imaging and laser based interference methods) applied in the conservation of historical paintings. Next to selected case studies the capabilities and limitations of the techniques are discussed. - Highlights: • All mobile sub-surface and depth-profiling techniques for paintings are reviewed. • The number of techniques available has increased considerably in the last years. • X-ray radiography and infrared reflectography are still the most used techniques. • Scanning macro-XRF and optical coherence tomography begin to establish. • Industrial non destructive testing techniques support the preservation of paintings

Depth profiling of hydrogen in ferritic/martensitic steels by means of a tritium imaging plate technique

International Nuclear Information System (INIS)

Otsuka, Teppei; Tanabe, Tetsuo

2013-01-01

Highlights: ► We applied a tritium imaging plate technique to depth profiling of hydrogen in bulk. ► Changes of hydrogen depth profiles in the steel by thermal annealing were examined. ► We proposed a release model of plasma-loaded hydrogen in the steel. ► Hydrogen is trapped at trapping sites newly developed by plasma loading. ► Hydrogen is also trapped at surface oxides and hardly desorbed by thermal annealing. -- Abstract: In order to understand how hydrogen loaded by plasma in F82H is removed by annealing at elevated temperatures in vacuum, depth profiles of plasma-loaded hydrogen were examined by means of a tritium imaging plate technique. Owing to large hydrogen diffusion coefficients in F82H, the plasma-loaded hydrogen easily penetrates into a deeper region becoming solute hydrogen and desorbs by thermal annealing in vacuum. However the plasma-loading creates new hydrogen trapping sites having larger trapping energy than that for the intrinsic sites beyond the projected range of the loaded hydrogen. Some surface oxides also trap an appreciable amount of hydrogen which is more difficult to remove by the thermal annealing

SIMS analysis: Development and evaluation 1994 summary report

International Nuclear Information System (INIS)

Groenewold, G.S.; Appelhans, A.D.; Ingram, J.C.; Delmore, J.E.; Dahl, D.A.

1994-12-01

Secondary ion mass spectrometry (SIMS) was evaluated for applicability to the characterization of salt cake and environmental samples. Salt cake is representative of waste found in radioactive waste storage tanks located at Hanford and at other DOE sites; it consists of nitrate, nitrite, hydroxide, and ferrocyanide salts, and the samples form the tanks are extremely radioactive. SIMS is an attractive technology for characterizing these samples because it has the capability for producing speciation information with little or no sample preparation, and it generates no additional waste. Experiments demonstrated that substantial speciation information could be readily generated using SIMS: metal clusters which include nitrate, nitrite, hydroxide, carbonate, cyanide, ferrocyanide and ferricyanide were observed. In addition, the mechanism of SIMS desorption of tributyl phosphate (TBP) was clearly identified, and minimum detection limit studies involving TBP were performed. Procurements leading to the construction of an ion trap SIMS instrument were initiated. Technology transfer of SIMS components to three instrument vendors was initiated. For FY-95, the SIMS evaluation program has been redirected toward identification of metal species on environmental samples

Estimating cumulative soil accumulation rates with in situ-produced cosmogenic nuclide depth profiles

International Nuclear Information System (INIS)

Phillips, William M.

2000-01-01

A numerical model relating spatially averaged rates of cumulative soil accumulation and hillslope erosion to cosmogenic nuclide distribution in depth profiles is presented. Model predictions are compared with cosmogenic 21 Ne and AMS radiocarbon data from soils of the Pajarito Plateau, New Mexico. Rates of soil accumulation and hillslope erosion estimated by cosmogenic 21 Ne are significantly lower than rates indicated by radiocarbon and regional soil-geomorphic studies. The low apparent cosmogenic erosion rates are artifacts of high nuclide inheritance in cumulative soil parent material produced from erosion of old soils on hillslopes. In addition, 21 Ne profiles produced under conditions of rapid accumulation (>0.1 cm/a) are difficult to distinguish from bioturbated soil profiles. Modeling indicates that while 10 Be profiles will share this problem, both bioturbation and anomalous inheritance can be identified with measurement of in situ-produced 14 C

Positron depth profiling of the structural and electronic structure transformations of hydrogenated Mg-based thin films

Science.gov (United States)

Eijt, S. W. H.; Kind, R.; Singh, S.; Schut, H.; Legerstee, W. J.; Hendrikx, R. W. A.; Svetchnikov, V. L.; Westerwaal, R. J.; Dam, B.

2009-02-01

We report positron depth-profiling studies on the hydrogen sorption behavior and phase evolution of Mg-based thin films. We show that the main changes in the depth profiles resulting from the hydrogenation to the respective metal hydrides are related to a clear broadening in the observed electron momentum densities in both Mg and Mg2Ni films. This shows that positron annihilation methods are capable of monitoring these metal-to-insulator transitions, which form the basis for important applications of these types of films in switchable mirror devices and hydrogen sensors in a depth-sensitive manner. Besides, some of the positrons trap at the boundaries of columnar grains in the otherwise nearly vacancy-free Mg films. The combination of positron annihilation and x-ray diffraction further shows that hydrogen loading at elevated temperatures, in the range of 480-600 K, leads to a clear Pd-Mg alloy formation of the Pd catalyst cap layer. At the highest temperatures, the hydrogenation induces a partial delamination of the ˜5 nm thin capping layer, as sensitively monitored by positron depth profiling of the fraction of ortho-positronium formed at interface with the cap layer. The delamination effectively blocks the hydrogen cycling. In Mg-Si bilayers, we investigated the reactivity upon hydrogen loading and heat treatments near 480 K, which shows that Mg2Si formation is fast relative to MgH2. The combination of positron depth profiling and transmission electron microscopy shows that hydrogenation promotes a complete conversion to Mg2Si for this destabilized metal hydride system, while a partially unreacted, Mg-rich amorphous prelayer remains on top of Mg2Si after a single heat treatment in an inert gas environment. Thin film studies indicate that the difficulty of rehydrogenation of Mg2Si is not primarily the result from slow hydrogen dissociation at surfaces, but is likely hindered by the presence of a barrier for removal of Mg from the readily formed Mg2Si.

TOF-SIMS imaging technique with information entropy

International Nuclear Information System (INIS)

Aoyagi, Satoka; Kawashima, Y.; Kudo, Masahiro

2005-01-01

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is capable of chemical imaging of proteins on insulated samples in principal. However, selection of specific peaks related to a particular protein, which are necessary for chemical imaging, out of numerous candidates had been difficult without an appropriate spectrum analysis technique. Therefore multivariate analysis techniques, such as principal component analysis (PCA), and analysis with mutual information defined by information theory, have been applied to interpret SIMS spectra of protein samples. In this study mutual information was applied to select specific peaks related to proteins in order to obtain chemical images. Proteins on insulated materials were measured with TOF-SIMS and then SIMS spectra were analyzed by means of the analysis method based on the comparison using mutual information. Chemical mapping of each protein was obtained using specific peaks related to each protein selected based on values of mutual information. The results of TOF-SIMS images of proteins on the materials provide some useful information on properties of protein adsorption, optimality of immobilization processes and reaction between proteins. Thus chemical images of proteins by TOF-SIMS contribute to understand interactions between material surfaces and proteins and to develop sophisticated biomaterials

Doping profile measurement on textured silicon surface

Science.gov (United States)

Essa, Zahi; Taleb, Nadjib; Sermage, Bernard; Broussillou, Cédric; Bazer-Bachi, Barbara; Quillec, Maurice

2018-04-01

In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it difficult to determine the doping profile measurement. We have measured by secondary ion mass spectrometry (SIMS) and electrochemical capacitance voltage profiling the doping profile of implanted phosphorus in alkaline textured and in polished monocrystalline silicon wafers. The paper shows that SIMS gives accurate results provided the primary ion impact angle is small enough. Moreover, the comparison between these two techniques gives an estimation of the concentration of electrically inactive phosphorus atoms.

Nanometric resolution in glow discharge optical emission spectroscopy and Rutherford backscattering spectrometry depth profiling of metal (Cr, Al) nitride multilayers

International Nuclear Information System (INIS)

Escobar Galindo, R.; Gago, R.; Fornies, E.; Munoz-Martin, A.; Climent Font, A.; Albella, J.M.

2006-01-01

In this work, we address the capability of glow discharge optical emission spectroscopy (GDOES) for fast and accurate depth profiling of multilayer nitride coatings down to the nanometer range. This is shown by resolving the particular case of CrN/AlN structures with individual thickness ranging from hundreds to few nanometers. In order to discriminate and identify artefacts in the GDOES depth profile due to the sputtering process, the layered structures were verified by Rutherford backscattering spectrometry (RBS) and scanning electron microscopy (SEM). The interfaces in the GDOES profiles for CrN/AlN structures are sharper than the ones measured for similar metal multilayers due to the lower sputtering rate of the nitrides. However, as a consequence of the crater shape, there is a linear degradation of the depth resolution with depth (approximately 40 nm/μm), saturating at a value of approximately half the thickness of the thinner layer. This limit is imposed by the simultaneous sputtering of consecutive layers. The ultimate GDOES depth resolution at the near surface region was estimated to be of 4-6 nm

Development of an ion time-of-flight spectrometer for neutron depth profiling

Science.gov (United States)

Cetiner, Mustafa Sacit

Ion time-of-flight spectrometry techniques are investigated for applicability to neutron depth profiling. Time-of-flight techniques are used extensively in a wide range of scientific and technological applications including energy and mass spectroscopy. Neutron depth profiling is a near-surface analysis technique that gives concentration distribution versus depth for certain technologically important light elements. The technique uses thermal or sub-thermal neutrons to initiate (n, p) or (n, alpha) reactions. Concentration versus depth distribution is obtained by the transformation of the energy spectrum into depth distribution by using stopping force tables of the projectiles in the substrate, and by converting the number of counts into concentration using a standard sample of known dose value. Conventionally, neutron depth profiling measurements are based on charged particle spectrometry, which employs semiconductor detectors such as a surface barrier detector (SBD) and the associated electronics. Measurements with semiconductor detectors are affected by a number of broadening mechanisms, which result from the interactions between the projectile ion and the detector material as well as fluctuations in the signal generation process. These are inherent features of the detection mechanism that involve the semiconductor detectors and cannot be avoided. Ion time-of-flight spectrometry offers highly precise measurement capabilities, particularly for slow particles. For high-energy low-mass particles, measurement resolution tends to degrade with all other parameters fixed. The threshold for more precise ion energy measurements with respect to conventional techniques, such as direct energy measurement by a surface barrier detector, is directly related to the design and operating parameters of the device. Time-of-flight spectrometry involves correlated detection of two signals by a coincidence unit. In ion time-of-flight spectroscopy, the ion generates the primary input

Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

NARCIS (Netherlands)

Vos, M.; Boerma, D.O.; Smulders, P.J.M.; Oosterhoff, S.

1986-01-01

Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the 11B(α, n)14N nuclear reaction. The distribution of the lattice disorder as a function of depth was determined from

Narrow nuclear resonance profiling of Al with subnanometric depth resolution

International Nuclear Information System (INIS)

Rosa, E.B.O. da; Krug, C.; Stedile, F.C.; Morais, J.; Baumvol, I.J.R.

2002-01-01

We report on the use of the narrow and isolated resonance at 404.9 keV in the cross-section curve of the 27 Al(p,γ) 28 Si nuclear reaction for profiling Al in ultrathin aluminum oxide films on Si. The samples were characterized as-deposited and after thermal annealing, so that Al transport could be studied. An estimated depth resolution of approximately 0.4 nm near the surface of the films could be obtained owing to: (i) the very small resonance width; (ii) the high stopping power of Al 2 O 3 for 404.9 keV protons; (iii) the high energy stability of the proton beam provided by the 500 kV HVEE ion implanter at Porto Alegre; and (iv) an apparent thickness magnification by a factor between 2.0 and 2.4 with the use of glancing incidence. This technique is compared to other methods for Al profiling like medium energy ion scattering and some sputtering-based techniques

A continuous OSL scanning method for analysis of radiation depth-dose profiles in bricks

DEFF Research Database (Denmark)

Bøtter-Jensen, L.; Jungner, H.; Poolton, N.R.J.

1995-01-01

This article describes the development of a method for directly measuring radiation depth-dose profiles from brick, tile and porcelain cores, without the need for sample separation techniques. For the brick cores, examples are shown of the profiles generated by artificial irradiation using...... the different photon energies from Cs-137 and Co-60 gamma sources; comparison is drawn with both the theoretical calculations derived from Monte Carlo simulations, as well as experimental measurements made using more conventional optically stimulated luminescence methods of analysis....

Mobile depth profiling and sub-surface imaging techniques for historical paintings—A review

Energy Technology Data Exchange (ETDEWEB)

Alfeld, Matthias, E-mail: matthias.alfeld@desy.de [University of Hamburg, Department of Chemistry, Martin-Luther-King Platz 6, D-20146 Hamburg (Germany); University of Antwerp, Department of Chemistry, Groenenbrogerlaan 171, B-2020 Antwerp (Belgium); Broekaert, José A.C., E-mail: jose.broekaert@chemie.uni-hamburg.de [University of Hamburg, Department of Chemistry, Martin-Luther-King Platz 6, D-20146 Hamburg (Germany)

2013-10-01

Hidden, sub-surface paint layers and features contain valuable information for the art-historical investigation of a painting's past and for its conservation for coming generations. The number of techniques available for the study of these features has been considerably extended in the last decades and established techniques have been refined. This review focuses on mobile non-destructive subsurface imaging and depth profiling techniques, which allow for the in-situ investigation of easel paintings, i.e. paintings on a portable support. Among the techniques discussed are: X-ray radiography and infrared reflectography, which are long established methods and are in use for several decades. Their capabilities of element/species specific imaging have been extended by the introduction of energy/wavelength resolved measurements. Scanning macro-X-ray fluorescence analysis made it for the first time possible to acquire elemental distribution images in-situ and optical coherence tomography allows for the non-destructive study the surface paint layers in virtual cross-sections. These techniques and their variants are presented next to other techniques, such as Terahertz imaging, Nuclear Magnetic Resonance depth profiling and established techniques for non destructive testing (thermography, ultrasonic imaging and laser based interference methods) applied in the conservation of historical paintings. Next to selected case studies the capabilities and limitations of the techniques are discussed. - Highlights: • All mobile sub-surface and depth-profiling techniques for paintings are reviewed. • The number of techniques available has increased considerably in the last years. • X-ray radiography and infrared reflectography are still the most used techniques. • Scanning macro-XRF and optical coherence tomography begin to establish. • Industrial non destructive testing techniques support the preservation of paintings.

Secondary ion mass spectroscopy (SIMS)

International Nuclear Information System (INIS)

Naik, P.K.

1975-01-01

Secondary Ion Mass Spectrometry (SIMS) which is primarily a method for investigating the chemical composition of the uppermost atomic layer of solid surfaces is explained. In this method, the specimen is bombarded with a primary positive ion beam of small current density monolayer. Positive and negative ions sputtered from the specimen are mass analysed to give the surface chemical composition. The analytical system which consists of a primary ion source, a target manipulator and a mass spectrometer housed in an ultrahigh vacuum system is described. This method can also be used for profile measurements in thin films by using higher current densities of the primary ions. Fields of application such as surface reactions, semiconductors, thin films emission processes, chemistry, metallurgy are touched upon. Various aspects of this method such as the sputtering process, instrumentation, and applications are discussed. (K.B.)

Chemical durability of alkali-borosilicate glasses studied by analytical SEM, IBA, isotopic-tracing and SIMS

Science.gov (United States)

Trocellier, P.; Djanarthany, S.; Chêne, J.; Haddi, A.; Brass, A. M.; Poissonnet, S.; Farges, F.

2005-10-01

Simple and complex alkali-borosilicate glasses were submitted to aqueous corrosion at room temperature, 60 and 90 °C in solutions with pH ranging between 0 and 12. Analytical scanning electron microscopy (SEM), ion beam analysis (IBA) techniques, isotopic tracing and secondary ion mass-depth profiling (SIMS) have been used to investigate the variations of the surface composition of glass. In acidic medium, the glass surface is generally covered by a thick hydrated silica layer, mobile elements like Li, Na and B and transition elements (Fe, Zr, Mo, etc.) are strongly depleted. Near pH 7, relative enrichments of aluminium, iron and rare earths are shown together with strong Li, Na and B depletions. In basic medium, the glass surface exhibits relative enrichments of the major part of transition metals (from Cr to U) whereas mobile elements seem to be kept close to their nominal concentration level at the glass surface and Si is severely impoverished. Hydrogen incorporated at the glass surface after leaching is much more immobile in neutral and basic media than in acid medium.

Chemical durability of alkali-borosilicate glasses studied by analytical SEM, IBA, isotopic-tracing and SIMS

International Nuclear Information System (INIS)

Trocellier, P.; Djanarthany, S.; Chene, J.; Haddi, A.; Brass, A.M.; Poissonnet, S.; Farges, F.

2005-01-01

Simple and complex alkali-borosilicate glasses were submitted to aqueous corrosion at room temperature, 60 and 90 deg. C in solutions with pH ranging between 0 and 12. Analytical scanning electron microscopy (SEM), ion beam analysis (IBA) techniques, isotopic tracing and secondary ion mass-depth profiling (SIMS) have been used to investigate the variations of the surface composition of glass. In acidic medium, the glass surface is generally covered by a thick hydrated silica layer, mobile elements like Li, Na and B and transition elements (Fe, Zr, Mo, etc.) are strongly depleted. Near pH 7, relative enrichments of aluminium, iron and rare earths are shown together with strong Li, Na and B depletions. In basic medium, the glass surface exhibits relative enrichments of the major part of transition metals (from Cr to U) whereas mobile elements seem to be kept close to their nominal concentration level at the glass surface and Si is severely impoverished. Hydrogen incorporated at the glass surface after leaching is much more immobile in neutral and basic media than in acid medium

Determination of the thickness distribution of a graphene layer grown on a 2″ SiC wafer by means of Auger electron spectroscopy depth profiling

International Nuclear Information System (INIS)

Kotis, L.; Gurban, S.; Pecz, B.; Menyhard, M.; Yakimova, R.

2014-01-01

Highlights: • The thickness of graphene grown on SiC was determined by AES depth profiling. • The AES depth profiling verified the presence of buffer layer on SiC. • The presence of unsaturated Si bonds in the buffer layer has been shown. • Using multipoint analysis thickness distribution of the graphene on the wafer was determined. - Abstract: Auger electron spectroscopy (AES) depth profiling was applied for determination of the thickness of a macroscopic size graphene sheet grown on 2 in. 6H-SiC (0 0 0 1) by sublimation epitaxy. The measured depth profile deviated from the expected exponential form showing the presence of an additional, buffer layer. The measured depth profile was compared to the simulated one which allowed the derivation of the thicknesses of the graphene and buffer layers and the Si concentration of buffer layer. It has been shown that the graphene-like buffer layer contains about 30% unsaturated Si. The depth profiling was carried out in several points (diameter 50 μm), which permitted the constructing of a thickness distribution characterizing the uniformity of the graphene sheet

Identification of Chinese medicinal fungus Cordyceps sinensis by depth-profiling mid-infrared photoacoustic spectroscopy

Science.gov (United States)

Du, Changwen; Zhou, Jianmin; Liu, Jianfeng

2017-02-01

With increased demand for Cordyceps sinensis it needs rapid methods to meet the challenge of identification raised in quality control. In this study Cordyceps sinensis from four typical natural habitats in China was characterized by depth-profiling Fourier transform infrared photoacoustic spectroscopy. Results demonstrated that Cordyceps sinensis samples resulted in typical photoacoustic spectral appearance, but heterogeneity was sensed in the whole sample; due to the heterogeneity Cordyceps sinensis was represented by spectra of four groups including head, body, tail and leaf under a moving mirror velocity of 0.30 cm s- 1. The spectra of the four groups were used as input of a probabilistic neural network (PNN) to identify the source of Cordyceps sinensis, and all the samples were correctly identified by the PNN model. Therefore, depth-profiling Fourier transform infrared photoacoustic spectroscopy provides novel and unique technique to identify Cordyceps sinensis, which shows great potential in quality control of Cordyceps sinensis.

Topochemical Analysis of Cell Wall Components by TOF-SIMS.

Science.gov (United States)

Aoki, Dan; Fukushima, Kazuhiko

2017-01-01

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a recently developing analytical tool and a type of imaging mass spectrometry. TOF-SIMS provides mass spectral information with a lateral resolution on the order of submicrons, with widespread applicability. Sometimes, it is described as a surface analysis method without the requirement for sample pretreatment; however, several points need to be taken into account for the complete utilization of the capabilities of TOF-SIMS. In this chapter, we introduce methods for TOF-SIMS sample treatments, as well as basic knowledge of wood samples TOF-SIMS spectral and image data analysis.

Depth profile analysis of thin TiOxNy films using standard ion beam analysis techniques and HERDA

International Nuclear Information System (INIS)

Markwitz, A.; Dytlewski, N.; Cohen, D.

1999-01-01

Ion beam assisted deposition is used to fabricate thin titanium oxynitride films (TiO x N y ) at Industrial Research (typical film thickness 100nm). At the Institute of Geological and Nuclear Sciences, the thin films are analysed using non-destructive standard ion beam analysis (IBA) techniques. High-resolution titanium depth profiles are measured with RBS using 1.5MeV 4 He + ions. Non-resonant nuclear reaction analysis (NRA) is performed for investigating the amounts of O and N in the deposited films using the reactions 16 O(d,p) 17 O at 920 keV and 14 N(d,α) 12 C at 1.4 MeV. Using a combination of these nuclear techniques, the stoichiometry as well as the thickness of the layers is revealed. However, when oxygen and nitrogen depth profiles are required for investigating stoichiometric changes in the films, additional nuclear analysis techniques such as heavy ion elastic recoil detection (HERDA) have to be applied. With HERDA, depth profiles of N, O, and Ti are measured simultaneously. In this paper comparative IBA measurement s of TiO x N y films with different compositions are presented and discussed

Depth profiling of superconducting thin films using rare gas ion sputtering with laser postionization

International Nuclear Information System (INIS)

Pallix, J.B.; Becker, C.H.; Missert, N.; Char, K.; Hammond, R.H.

1988-01-01

Surface analysis by laser ionization (SALI) has been used to examine a high-T/sub c/ superconducting thin film of nominal composition YBa 2 Cu 3 O 7 deposited on SrTiO 3 (100) by reactive magnetron sputtering. The main focus of this work was to probe the compositional uniformity and the impurity content throughout the 1800 A thick film having critical current densities of 1 to 2 x 10 6 A/cm 2 . SALI depth profiles show this film to be more uniform than thicker films (∼1 μm, prepared by electron beam codeposition) which were studied previously, yet the data show that some additional (non-superconducting) phases derived from Y, Ba, Cu, and O are still present. These additional phases are studied by monitoring the atomic and diatomic-oxide photoion profiles and also the depth profiles of various clusters (e.g. Y 2 O 2 + , Y 2 O 3 + , Y 3 O 4 + , Ba 2 O + , Ba 2 O 2 + , BaCu + , BaCuO + , YBaO 2 + , YSrO 2 + , etc.). A variety of impurities are observed to occur throughout the film including rather large concentrations of Sr. Hydroxides, F, Cl, and CO/sub x/ are evident particularly in the sample's near surface region (the top ∼100 A)

Depth profiling of superconducting thin films using rare gas ion sputtering with laser postionization

Science.gov (United States)

Pallix, J. B.; Becker, C. H.; Missert, N.; Char, K.; Hammond, R. H.

1988-02-01

Surface analysis by laser ionization (SALI) has been used to examine a high-Tc superconducting thin film of nominal composition YBa2Cu3O7 deposited on SrTiO3 (100) by reactive magnetron sputtering. The main focus of this work was to probe the compositional uniformity and the impurity content throughout the 1800 Å thick film having critical current densities of 1 to 2×106 A/cm2. SALI depth profiles show this film to be more uniform than thicker films (˜1 μm, prepared by electron beam codeposition) which were studied previously, yet the data show that some additional (non-superconducting) phases derived from Y, Ba, Cu, and O are still present. These additional phases are studied by monitoring the atomic and diatomic-oxide photoion profiles and also the depth profiles of various clusters (e.g. Y2O2+, Y2O3+, Y3O4+, Ba2O+, Ba2O2+, BaCu+, BaCuO+, YBaO2+, YSrO2+, etc.). A variety of impurities are observed to occur throughout the film including rather large concentrations of Sr. Hydroxides, F, Cl, and COx are evident particularly in the sample's near surface region (the top ˜100 Å).

Sediment mixing and accumulation rate effects on radionuclide depth profiles in Hudson estuary sediments

International Nuclear Information System (INIS)

Olsen, C.R.; Simpson, H.J.; Peng, T.; Bopp, R.F.; Trier, R.M.

1981-01-01

Measured anthropogenic radionuclide profiles in sediment cores from the Hudson River estuary were compared with profiles computed by using known input histories of radionuclides to the estuary and mixing coefficients which decreased exponentially with depth in the sediment. Observed 134 Cs sediment depth profiles were used in the mixing rate computation because reactor releases were the only significant source for this nuclide, whereas the inputs of 137 Cs and /sup 239.240/Pu to the estuary were complicated by runoff or erosion in upstream areas, in addition to direct fallout from precipitation. Our estimates for the rates of surface sediment mixing in the low salinity reach of the estuary range from 0.25 to 1 cm 2 /yr, or less. In some areas of the harbor adjacent to New York City, were fine-particle accumulation rates are generally >3 cm/yr, and often as high as 10 to 20 cm/yr, sediment mixing rates as high as 10 cm 2 /yr would have little effect on radionuclide peak distributions. Consequently, anthropogenic radionuclide maximum activities in subsurface sediments of the Hudson appear to be useful as time-stratigraphic reference levels, which can be correlated with periods of maximum radionuclide inputs for estimating rates and patterns of sediment accumulation

Acclimation to different depths by the marine angiosperm Posidonia oceanica: transcriptomic and proteomic profiles

Directory of Open Access Journals (Sweden)

Emanuela eDattolo

2013-06-01

Full Text Available For seagrasses, seasonal and daily variations in light and temperature represent the mains factors driving their distribution along the bathymetric cline. Changes in these environmental factors, due to climatic and anthropogenic effects, can compromise their survival. In a framework of conservation and restoration, it becomes crucial to improve our knowledge about the physiological plasticity of seagrass species along environmental gradients. Here, we aimed to identify differences in transcriptomic and proteomic profiles, involved in the acclimation along the depth gradient in the seagrass Posidonia oceanica, and to improve the available molecular resources in this species, which is an important requisite for the application of eco-genomic approaches. To do that, from plant growing in the shallow (-5m and a deep (-25m portions of a single meadow, (i we generated two reciprocal EST (Expressed Sequences Tags libraries using a Suppressive Subtractive Hybridization (SSH approach, to obtain depth/specific transcriptional profiles, and (ii we identified proteins differentially expressed, using the highly innovative USIS mass spectrometry methodology, coupled with 1D-SDS electrophoresis and labeling free approach. Mass spectra were searched in the open source Global Proteome Machine (GPM engine against plant databases and with the X!Tandem algorithm against a local database. Transcriptional analysis showed both quantitative and qualitative differences between depths. EST libraries had only the 3% of transcripts in common. A total of 315 peptides belonging to 64 proteins were identified by mass spectrometry. ATP synthase subunits were among the most abundant proteins in both conditions. Both approaches identified genes and proteins in pathways related to energy metabolism, transport and genetic information processing, that appear o be the most involved in depth acclimation in P. oceanica. Their putative rules in acclimation to depth were discussed.

Acclimation to different depths by the marine angiosperm Posidonia oceanica: transcriptomic and proteomic profiles.

Science.gov (United States)

Dattolo, Emanuela; Gu, Jenny; Bayer, Philipp E; Mazzuca, Silvia; Serra, Ilia A; Spadafora, Antonia; Bernardo, Letizia; Natali, Lucia; Cavallini, Andrea; Procaccini, Gabriele

2013-01-01

For seagrasses, seasonal and daily variations in light and temperature represent the mains factors driving their distribution along the bathymetric cline. Changes in these environmental factors, due to climatic and anthropogenic effects, can compromise their survival. In a framework of conservation and restoration, it becomes crucial to improve our knowledge about the physiological plasticity of seagrass species along environmental gradients. Here, we aimed to identify differences in transcriptomic and proteomic profiles, involved in the acclimation along the depth gradient in the seagrass Posidonia oceanica, and to improve the available molecular resources in this species, which is an important requisite for the application of eco-genomic approaches. To do that, from plant growing in shallow (-5 m) and deep (-25 m) portions of a single meadow, (i) we generated two reciprocal Expressed Sequences Tags (EST) libraries using a Suppressive Subtractive Hybridization (SSH) approach, to obtain depth/specific transcriptional profiles, and (ii) we identified proteins differentially expressed, using the highly innovative USIS mass spectrometry methodology, coupled with 1D-SDS electrophoresis and labeling free approach. Mass spectra were searched in the open source Global Proteome Machine (GPM) engine against plant databases and with the X!Tandem algorithm against a local database. Transcriptional analysis showed both quantitative and qualitative differences between depths. EST libraries had only the 3% of transcripts in common. A total of 315 peptides belonging to 64 proteins were identified by mass spectrometry. ATP synthase subunits were among the most abundant proteins in both conditions. Both approaches identified genes and proteins in pathways related to energy metabolism, transport and genetic information processing, that appear to be the most involved in depth acclimation in P. oceanica. Their putative rules in acclimation to depth were discussed.

Dechanneling measurements of defect depth profiles and effective cross-channel distribution of misaligned atoms in ion irradiated gold

International Nuclear Information System (INIS)

Pronko, P.P.

1975-01-01

Defect depth profiles for self ion and He + irradiated gold are obtained from single and multiple scatter dechanneling analysis in single crystal gold films. Quantitative defect densities are obtained through use of atomic scattering cross sections. Integral damage profiles are extracted from the dechanneling spectra and subsequently differentiated to yield the volume concentration of defects as a function of depth. Results from the self ion irradiations suggest that incident ions produce defect distributions across depths much greater than predicted by random stopping theory. This is in agreement with TEM observations of others. Comparison of the experimental profiles is made with theoretical vacancy distributions predicted by defect diffusion in a radiation environment. Similarities are observed for the low fluence irradiations suggesting that profile characteristics may be controlled by rapid migration and loss of interstitials to the film surfaces during irradiation. Information on the across-channel distribution of misaligned atoms in the damaged films is obtained with the steady increase of transverse energy model applied to the dechanneling spectra. A predominance of slight misalignment is observed with no contribution to dechanneling coming from atoms displaced significantly close to the center of the channels. This is in keeping with what is expected for crystal distortions caused by the strain fields associated with vacancy cluster defects

Dechanneling measurements of defect depth profiles and effective cross-channel distribution of misaligned atoms in ion-irradiated gold

International Nuclear Information System (INIS)

Pronko, P.P.

1976-01-01

Defect depth profiles for self-ion and He + irradiated gold are obtained from single and multiple scatter dechanneling analysis in single-crystal gold films. Quantitative defect densities are obtained through use of atomic-scattering cross sections. Integral damage profiles are extracted from the dechanneling spectra and subsequently differentiated to yield the volume concentration of defects as a function of depth. Results from the self-ion irradiations suggest that incident ions produce defect distributions across depths much greater than predicted by random stopping theory. This is in agreement with TEM observations of others. Comparison of the experimental profiles is made with theoretical vacancy distributions predicted by defect diffusion in a radiation environment. Similarities are observed for the low-fluence irradiations, suggesting that profile characteristics may be controlled by rapid migration and loss of interstitials to the film surfaces during irradiation. Information on the across-channel distribution of misaligned atoms in the damaged films is obtained with the steady increase of transverse energy model. A predominance of slight misalignment is observed with no contribution to dechanneling coming from atoms displaced significantly close to the center of the channels. This is in keeping with what is expected for crystal distortions caused by the strain fields associated with vacancy cluster defects. (Auth.)

Chemical abrasion-SIMS (CA-SIMS) U-Pb dating of zircon from the late Eocene Caetano caldera, Nevada

Science.gov (United States)

Watts, Kathryn E.; Coble, Matthew A.; Vazquez, Jorge A.; Henry, Christopher D.; Colgan, Joseph P.; John, David A.

2016-01-01

Zircon geochronology is a critical tool for establishing geologic ages and time scales of processes in the Earth's crust. However, for zircons compromised by open system behavior, achieving robust dates can be difficult. Chemical abrasion (CA) is a routine step prior to thermal ionization mass spectrometry (TIMS) dating of zircon to remove radiation-damaged parts of grains that may have experienced open system behavior and loss of radiogenic Pb. While this technique has been shown to improve the accuracy and precision of TIMS dating, its application to high-spatial resolution dating methods, such as secondary ion mass spectrometry (SIMS), is relatively uncommon. In our efforts to U-Pb date zircons from the late Eocene Caetano caldera by SIMS (SHRIMP-RG: sensitive high resolution ion microprobe, reverse geometry), some grains yielded anomalously young U-Pb ages that implicated Pb-loss and motivated us to investigate with a comparative CA and non-CA dating study. We present CA and non-CA 206Pb/238U ages and trace elements determined by SHRIMP-RG for zircons from three Caetano samples (Caetano Tuff, Redrock Canyon porphyry, and a silicic ring-fracture intrusion) and for R33 and TEMORA-2 reference zircons. We find that non-CA Caetano zircons have weighted mean or bimodal U-Pb ages that are 2–4% younger than CA zircons for the same samples. CA Caetano zircons have mean U-Pb ages that are 0.4–0.6 Myr older than the 40Ar/39Ar sanidine eruption age (34.00 ± 0.03 Ma; error-weighted mean, 2σ), whereas non-CA zircons have ages that are 0.7–1.3 Myr younger. U-Pb ages do not correlate with U (~ 100–800 ppm), Th (~ 50–300 ppm) or any other measured zircon trace elements (Y, Hf, REE), and CA and non-CA Caetano zircons define identical trace element ranges. No statistically significant difference in U-Pb age is observed for CA versus non-CA R33 or TEMORA-2 zircons. Optical profiler measurements of ion microprobe pits demonstrate consistent depths of ~ 1.6�

Normal and Abnormal Scenario Modeling with GoldSim for Radioactive Waste Disposal System

International Nuclear Information System (INIS)

Lee, Youn Myoung; Jeong, Jong Tae

2010-08-01

A modeling study and development of a total system performance assessment (TSPA) template program, by which an assessment of safety and performance for the radioactive waste repository with normal and/or abnormal nuclide release cases could be assessed has been carried out by utilizing a commercial development tool program, GoldSim. Scenarios associated with the various FEPs and involved in the performance of the proposed repository in view of nuclide transport and transfer both in the geosphere and biosphere has been also carried out. Selected normal and abnormal scenarios that could alter groundwater flow scheme and then nuclide transport are modeled with the template program. To this end in-depth system models for the normal and abnormal well and earthquake scenarios that are conceptually and rather practically described and then ready for implementing into a GoldSim TSPA template program are introduced with conceptual schemes for each repository system. Illustrative evaluations with data currently available are also shown

Physical mechanisms of thermal-diffusivity depth-profile generation in a hardened low-alloy Mn, Si, Cr, Mo steel reconstructed by photothermal radiometry

International Nuclear Information System (INIS)

Nicolaides, Lena; Mandelis, Andreas; Beingessner, Clare J.

2001-01-01

It is well established that in hardened steels thermal-diffusivity broadly anticorrelates with microhardness, allowing thermal-wave depth profilometry to be used as a tool to measure microhardness profiles. Nevertheless, the physical mechanisms for this anticorrelation have not been well understood. In this work, the thermal-diffusivity profiles of rough, hardened industrial steels were reconstructed after the elimination of roughness effects from the experimental data. Carburizing and quenching are widely used for the heat treatment of steel components, and it is important to understand their effects on thermal-diffusivity profiles. A thorough examination of the actual mechanism by which thermal-diffusivity depth profiles are affected by first carburizing and then quenching AISI-8620 steels was performed. It was concluded that the variation of thermal diffusivity with depth is dominated by the carbon concentration profile, whereas the absolute value of the thermal diffusivity is a function of microstructure. [copyright] 2001 American Institute of Physics

Tailoring the stress-depth profile in thin films; the case of γ'-Fe4N1-x

International Nuclear Information System (INIS)

Wohlschloegel, M.; Welzel, U.; Mittemeijer, E.J.

2011-01-01

Homogeneous γ'-Fe 4 N 1-x thin films were produced by gas through-nitriding of iron thin films (thickness 800 nm) deposited onto Al 2 O 3 substrates by Molecular Beam Epitaxy. The nitriding parameters were chosen such that the nitrogen concentration within the γ' thin films was considerably lower (x ∼ 0.05) than the stoichiometric value (x = 0). X-ray diffraction stress analysis at constant penetration depths performed after the nitriding step revealed the presence of tensile stress parallel to the surface; the tensile stress was shown to be practically constant over the entire film thickness. For further nitriding treatments, the parameters were adjusted such that nitrogen enrichment occurred near the specimen surface. The depth-dependent nitrogen enrichment could be monitored by evaluating the strain-free lattice parameter of γ' as a function of X-ray penetration depth and relating it to the nitrogen concentration employing a direct relation between lattice parameter and nitrogen concentration. The small compositional variations led to distinct characteristic stress-depth profiles. The stress changes non-monotonously with depth in the film as could be shown by non-destructive X-ray diffraction stress analysis at constant penetration depths. This work demonstrates that by a specific choice of a first and a subsequent nitriding treatment (employing different nitriding potentials and/or different temperatures for both treatments) controlled development of residual stress profiles is possible in thin iron-nitride surface layers.

Interfacial micropore defect formation in PEDOT:PSS-Si hybrid solar cells probed by TOF-SIMS 3D chemical imaging.

Science.gov (United States)

Thomas, Joseph P; Zhao, Liyan; Abd-Ellah, Marwa; Heinig, Nina F; Leung, K T

2013-07-16

Conducting p-type polymer layers on n-type Si have been widely studied for the fabrication of cost-effective hybrid solar cells. In this work, time-of-flight secondary ion mass spectrometry (TOF-SIMS) is used to provide three-dimensional chemical imaging of the interface between poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) and SiOx/Si in a hybrid solar cell. To minimize structural damage to the polymer layer, an Ar cluster sputtering source is used for depth profiling. The present result shows the formation of micropore defects in the interface region of the PEDOT:PSS layer on the SiOx/Si substrate. This interfacial micropore defect formation becomes more prominent with increasing thickness of the native oxide layer, which is a key device parameter that greatly affects the hybrid solar cell performance. Three-dimensional chemical imaging coupled with Ar cluster ion sputtering has therefore been demonstrated as an emerging technique for probing the interface of this and other polymer-inorganic systems.

Quantitative Auger depth profiling of LPCVD and PECVD silicon nitride films

International Nuclear Information System (INIS)

Keim, E.G.; Aite, K.

1989-01-01

Thin silicon nitride films (100-210 nm) with refractive indices varying from 1.90 to 2.10 were deposited on silicon substrates by low pressure chemical vapour deposition (LPCVD) and plasma enhanced chemical vapour deposition (PECVD). Rutherford backscattering spectrometry (RBS), ellipsometry, surface profiling measurements and Auger electron spectroscopy (AES) in combination with Ar + sputtering were used to characterize these films. We have found that the use of (p-p)heights of the Si LVV and N KLL Auger transitions in the first derivative of the energy distribution (dN(E)/dE) leads to an accurate determination of the silicon nitride composition in Auger depth profiles over a wide range of atomic Si/N ratios. Moreover, we have shown that the Si KLL Auger transition, generally considered to be a better probe than the low energy Si LVV Auger transition in determining the chemical composition of silicon nitride layers, leads to deviating results. (orig.)

Biochemical imaging of tissues by SIMS for biomedical applications

International Nuclear Information System (INIS)

Lee, Tae Geol; Park, Ji-Won; Shon, Hyun Kyong; Moon, Dae Won; Choi, Won Woo; Li, Kapsok; Chung, Jin Ho

2008-01-01

With the development of optimal surface cleaning techniques by cluster ion beam sputtering, certain applications of SIMS for analyzing cells and tissues have been actively investigated. For this report, we collaborated with bio-medical scientists to study bio-SIMS analyses of skin and cancer tissues for biomedical diagnostics. We pay close attention to the setting up of a routine procedure for preparing tissue specimens and treating the surface before obtaining the bio-SIMS data. Bio-SIMS was used to study two biosystems, skin tissues for understanding the effects of photoaging and colon cancer tissues for insight into the development of new cancer diagnostics for cancer. Time-of-flight SIMS imaging measurements were taken after surface cleaning with cluster ion bombardment by Bi n or C 60 under varying conditions. The imaging capability of bio-SIMS with a spatial resolution of a few microns combined with principal component analysis reveal biologically meaningful information, but the lack of high molecular weight peaks even with cluster ion bombardment was a problem. This, among other problems, shows that discourse with biologists and medical doctors are critical to glean any meaningful information from SIMS mass spectrometric and imaging data. For SIMS to be accepted as a routine, daily analysis tool in biomedical laboratories, various practical sample handling methodology such as surface matrix treatment, including nano-metal particles and metal coating, in addition to cluster sputtering, should be studied

Binding properties of SUMO-interacting motifs (SIMs) in yeast.

Science.gov (United States)

Jardin, Christophe; Horn, Anselm H C; Sticht, Heinrich

2015-03-01

Small ubiquitin-like modifier (SUMO) conjugation and interaction play an essential role in many cellular processes. A large number of yeast proteins is known to interact non-covalently with SUMO via short SUMO-interacting motifs (SIMs), but the structural details of this interaction are yet poorly characterized. In the present work, sequence analysis of a large dataset of 148 yeast SIMs revealed the existence of a hydrophobic core binding motif and a preference for acidic residues either within or adjacent to the core motif. Thus the sequence properties of yeast SIMs are highly similar to those described for human. Molecular dynamics simulations were performed to investigate the binding preferences for four representative SIM peptides differing in the number and distribution of acidic residues. Furthermore, the relative stability of two previously observed alternative binding orientations (parallel, antiparallel) was assessed. For all SIMs investigated, the antiparallel binding mode remained stable in the simulations and the SIMs were tightly bound via their hydrophobic core residues supplemented by polar interactions of the acidic residues. In contrary, the stability of the parallel binding mode is more dependent on the sequence features of the SIM motif like the number and position of acidic residues or the presence of additional adjacent interaction motifs. This information should be helpful to enhance the prediction of SIMs and their binding properties in different organisms to facilitate the reconstruction of the SUMO interactome.

Characterizing contaminant concentrations with depth by using the USGS well profiler in Oklahoma, 2003-9

Science.gov (United States)

Smith, S. Jerrod; Becker, Carol J.

2011-01-01

Since 2003, the U.S. Geological Survey (USGS) Oklahoma Water Science Center has been using the USGS well profiler to characterize changes in water contribution and contaminant concentrations with depth in pumping public-supply wells in selected aquifers. The tools and methods associated with the well profiler, which were first developed by the USGS California Water Science Center, have been used to investigate common problems such as saline water intrusion in high-yield irrigation wells and metals contamination in high-yield public-supply wells.

Elemental and isotopic imaging of biological samples using NanoSIMS.

Science.gov (United States)

Kilburn, Matt R; Clode, Peta L

2014-01-01

With its low detection limits and the ability to analyze most of the elements in the periodic table, secondary ion mass spectrometry (SIMS) represents one of the most versatile in situ analytical techniques available, and recent developments have resulted in significant advantages for the use of imaging mass spectrometry in biological and biomedical research. Increases in spatial resolution and sensitivity allow detailed interrogation of samples at relevant scales and chemical concentrations. Advances in dynamic SIMS, specifically with the advent of NanoSIMS, now allow the tracking of stable isotopes within biological systems at subcellular length scales, while static SIMS combines subcellular imaging with molecular identification. In this chapter, we present an introduction to the SIMS technique, with particular reference to NanoSIMS, and discuss its application in biological and biomedical research.

Depth profiling of residual activity of ^{237}U fragments as a range verification technique for ^{238}U primary ion beam

Directory of Open Access Journals (Sweden)

I. Strašík

2012-07-01

Full Text Available Experimental and simulation data concerning fragmentation of ^{238}U ion beam in aluminum, copper, and stainless-steel targets with the initial energy 500 and 950  MeV/u are collected in the paper. A range-verification technique based on depth profiling of residual activity is presented. The irradiated targets were constructed in the stacked-foil geometry and analyzed using gamma-ray spectroscopy. One of the purposes of these experiments was depth profiling of residual activity of induced nuclides and projectile fragments. Among the projectile fragments, special attention is paid to the ^{237}U isotope that has a range very close to the range of the primary ^{238}U ions. Therefore, the depth profiling of the ^{237}U isotope can be utilized for experimental verification of the ^{238}U primary-beam range, which is demonstrated and discussed in the paper. The experimental data are compared with computer simulations by FLUKA, SRIM, and ATIMA, as well as with complementary experiments.

Ga+ TOF-SIMS lineshape analysis for resolution enhancement of MALDI MS spectra of a peptide mixture

International Nuclear Information System (INIS)

Malyarenko, D.I.; Chen, H.; Wilkerson, A.L.; Tracy, E.R.; Cooke, W.E.; Manos, D.M.; Sasinowski, M.; Semmes, O.J.

2004-01-01

The use of mass spectrometry to obtain molecular profiles indicative of alteration of concentrations of peptides in body fluids is currently the subject of intense investigation. For surface-based time-of-flight mass spectrometry the reliability and specificity of such profiling methods depend both on the resolution of the measuring instrument and on the preparation of samples. The present work is a part of a program to use Ga + beam TOF-SIMS alone, and as an adjunct to MALDI, in the development of reliable protein and peptide markers for diseases. Here, we describe techniques to prepare samples of relatively high-mass peptides, which serve as calibration standards and proxies for biomarkers. These are: Arg8-vasopressin, human angiotensin II, and somatostatin. Their TOF-SIMS spectra show repeatable characteristic features, with mass resolution exceeding 2000, including parent peaks and chemical adducts. The lineshape analysis for high-resolution parent peaks is shown to be useful for filter construction and deconvolution of inferior resolution SELDI-TOF spectra of calibration peptide mixture

In situ neutron depth profiling: A powerful method to probe lithium transport in micro-batteries

NARCIS (Netherlands)

Oudenhoven, J.F.M.; Labohm, F.; Mulder, M.; Niessen, R.A.H.; Mulder, F.M.; Notten, P.H.L.

2011-01-01

In situ neutron depth profiling (NDP) offers the possibility to observe lithium transport inside micro-batteries during battery operation. It is demonstrated that NDP results are consistent with the results of electrochemical measurements, and that the use of an enriched6LiCoO2 cathode offers more

Depth profiles of defects in Ar-iondashirradiated steels determined by a least-squares fit of S parameters from variable-energy positron annihilation

Science.gov (United States)

Aruga, Takeo; Takamura, Saburo; Nakata, Kiyotomo; Ito, Yasuo

1995-01-01

Using a new method for reconstructing the depth profile of defects in an iondashirradiated sample by using slow positrons, the depth profiles of vacancy-type defects in 316 stainless steel samples, irradiated with 250 keV Ar ions to a dose of 7.5 × 10 19 m -2 at room temperature, have been calculated from Doppler-broadening S parameters measured as a function of positron energies up to 16 keV. Without assuming any type of shape for the defect profiles, such as Gaussian, the defect profiling is done using a least-squares fitting method. The resulting profile suggests that in as-irradiated 316 stainless steel samples with lower carbon content, the defect distribution peaks at a depth four times larger than that of the ion range. After annealing at a high temperature of 1253 K for 0.5 h, the fitted profile shows that the peak around the average ion range is highly enhanced. While in the steel added with 0.3 wt% titanium, the profile exhibits almost no peak after annealing at 1073 K. The results indicate that the radiationdashproduced vacancy clusters are stabilized by the implanted Ar atoms more effectively in the Ti-free steel than in the Ti-added steel.

Model for Sucker-Rod Pumping Unit Operating Modes Analysis Based on SimMechanics Library

Science.gov (United States)

Zyuzev, A. M.; Bubnov, M. V.

2018-01-01

The article provides basic information about the process of a sucker-rod pumping unit (SRPU) model developing by means of SimMechanics library in the MATLAB Simulink environment. The model is designed for the development of a pump productivity optimal management algorithms, sensorless diagnostics of the plunger pump and pumpjack, acquisition of the dynamometer card and determination of a dynamic fluid level in the well, normalization of the faulty unit operation before troubleshooting is performed by staff as well as equilibrium ratio determining by energy indicators and outputting of manual balancing recommendations to achieve optimal power consumption efficiency. Particular attention is given to the application of various blocks from SimMechanics library to take into account the pumpjack construction principal characteristic and to obtain an adequate model. The article explains in depth the developed tools features for collecting and analysis of simulated mechanism data. The conclusions were drawn about practical implementation possibility of the SRPU modelling results and areas for further development of investigation.

SIMS: addressing the problem of heterogeneity in databases

Science.gov (United States)

Arens, Yigal

1997-02-01

The heterogeneity of remotely accessible databases -- with respect to contents, query language, semantics, organization, etc. -- presents serious obstacles to convenient querying. The SIMS (single interface to multiple sources) system addresses this global integration problem. It does so by defining a single language for describing the domain about which information is stored in the databases and using this language as the query language. Each database to which SIMS is to provide access is modeled using this language. The model describes a database's contents, organization, and other relevant features. SIMS uses these models, together with a planning system drawing on techniques from artificial intelligence, to decompose a given user's high-level query into a series of queries against the databases and other data manipulation steps. The retrieval plan is constructed so as to minimize data movement over the network and maximize parallelism to increase execution speed. SIMS can recover from network failures during plan execution by obtaining data from alternate sources, when possible. SIMS has been demonstrated in the domains of medical informatics and logistics, using real databases.

Backside versus frontside advanced chemical analysis of high-k/metal gate stacks

Energy Technology Data Exchange (ETDEWEB)

Martinez, E., E-mail: eugenie.martinez@cea.fr [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Saidi, B. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Veillerot, M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Caubet, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Fabbri, J-M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Piallat, F. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Gassilloud, R. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Schamm-Chardon, S. [CEMES-CNRS et Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France)

2015-08-15

Highlights: • The backside approach is a promising solution for advanced chemical characterization of future MOSFETs. • Frontside ToF-SIMS and Auger depth profiles are affected by cumulative mixing effects and thus not relevant for analyzing ultra-thin layers. • Higher in-depth resolution is possible in the backside approach for Auger and ToF-SIMS depth profiling. • Backside depth profiling allows revealing ultra-thin layers and elemental in-depth redistribution inside high-k/metal gate stacks. • Backside XPS allows preserving the full metal gate, thus enabling the analysis of real technological samples. - Abstract: Downscaling of transistors beyond the 14 nm technological node requires the implementation of new architectures and materials. Advanced characterization methods are needed to gain information about the chemical composition of buried layers and interfaces. An effective approach based on backside analysis is presented here. X-ray photoelectron spectroscopy, Auger depth profiling and time-of-flight secondary ions mass spectrometry are combined to investigate inter-diffusion phenomena. To highlight improvements related to the backside method, backside and frontside analyses are compared. Critical information regarding nitrogen, oxygen and aluminium redistribution inside the gate stacks is obtained only in the backside configuration.

SIMS analysis of isotopic impurities in ion implants

International Nuclear Information System (INIS)

Sykes, D.E.; Blunt, R.T.

1986-01-01

The n-type dopant species Si and Se used for ion implantation in GaAs are multi-isotopic with the most abundant isotope not chosen because of potential interferences with residual gases. SIMS analysis of a range of 29 Si implants produced by several designs of ion implanter all showed significant 28 Si impurity with a different depth distribution from that of the deliberately implanted 29 Si isotope. This effect was observed to varying degrees with all fifteen implanters examined and in every 29 Si implant analysed to date 29 Si + , 29 Si ++ and 30 Si implants all show the same effect. In the case of Se implantation, poor mass resolution results in the implantation of all isotopes with the same implant distribution (i.e. energy), whilst implants carried out with good mass resolution show the implantation of all isotopes with the characteristic lower depth distribution of the impurity isotopes as found in the Si implants. This effect has also been observed in p-type implants into GaAs (Mg) and for Ga implanted in Si. A tentative explanation of the effect is proposed. (author)

Distribution of 137Cs in benthic plants along depth profiles in the outer Puck Bay (Baltic Sea)

International Nuclear Information System (INIS)

Tamara Zalewska

2012-01-01

A study was conducted on three macroalgae species: Polysiphonia fucoides and Furcellaria lumbricalis, the species of the red algae division, and Cladophora glomerata, representing the green algae division, as well as Zostera marina, representing vascular plants. The main aim of the study was to recognize the level of 137 Cs concentrations in the plants, which could be used as a measurement of bioaccumulation efficiency in the selected macrophytes at varying depths, and in the seasonal resolution of the vegetation period: spring-summer and autumnal. The plants' biomass clearly showed seasonal variability, as did the 137 Cs concentrations in the plants. Cesium activity also changed with depth. Seasonal variability in radionuclide content in the plants, as well as the differences in its activity determined along the depth profile, were related mainly to the plant biomass and the dilution effect caused by the biomass increment and reflected the growth dynamics. P. fucoides showed much greater bioaccumulation ability at each depth as compared to C. glomerata, a green algae. Lower concentrations of 137 Cs were also identified in F. lumbricalis and in Z. marina, mostly as a result of differences in morphology and physiology. P. fucoides can be recommended as a bioindicator for the monitoring of 137 Cs contamination due to the high efficiency of bioaccumulation and the available biomass along the depth profile, as well as the occurrence throughout the entire vegetation season. (author)

SNMS/SIMS. A new surface analytical device in ATOMKI

International Nuclear Information System (INIS)

Berenyi, Z.; Vad, K.; Katona, G.L.; Koever, A.

2004-01-01

Complete text of publication follows. A Secondary Neutral Mass Spectrometer (SNMS) was installed in the institute in 2004. The aim of the investment was to complement the surface analytical methods of the Section of Electron Spectroscopy and Materials Sciences of ATOMKI (eg. preparation, characterization and depth profiling of thin layer and thin multilayer samples) as well as to establish a new surface analytical technique in the institute to be offered for other internal and external users. This equipment is the first SNMS apparatus in Hungary. The device is capable to measure the elemental composition of the surface region (i.e. the topmost 1 μm) of conductor, semiconductor and insulator surfaces with a unique in-depth resolution of some nanometers. As an example figure 1. shows a measured depth profile of a Ru-Co multilayer sample, consisting of 25 bilayers of Co(3nm)-Ru(3nm) sandwiched between two Ru(10nm) layers on the top of a Si substrate. This SNMS method is based on the mass spectrometry of the neutral particles of the analyzed material removed by ion bombardment and ionized in a radio-frequency plasma generated above the sample. In addition to the SNMS method the apparatus is equipped with a Specs IQE 12/38 scanning ion gun and offers the application of elemental mapping of surface layers using Secondary Ion Mass Spectrometry (SIMS) technique with moderate lateral resolution (∼ 120 μm), as well. Application for financial support was submitted to the R and D Programme of the Ministry of Education of Hungary together with the Department of Solid State Physics of the University of Debrecen. Besides the 59.5 MFt supported by the programme a significant contribution of 25.5 MFt from the two applying institutes had to be made. The device was purchased in accordance with the public procurement procedure. Out of the three candidates answering the call for the tender the one submitted by Specs GmbH offering their Specs-INA device was the most appropriate to

Analysis of organic compounds by secondary neutral mass spectrometry (SNMS) and secondary ion mass spectrometry (SIMS)

International Nuclear Information System (INIS)

Ewinger, H.P.

1993-05-01

This study is about the use of secondary neutral mass spectrometry (SNMS) and secondary ion mass spectrometry (SIMS) as analytical techniques with depth resolution in determining organic components in environmental solid microparticles. The first application of plasma SNMS to organic compounds revealed the spectra to be composed mainly of signals from the atoms of all participating elements, such as C, H, O, N, S, P, and Cl. In addition, signals produced by multi-atomic clusters can be detected, such as CH, C 2 , CH 2 , C 2 H, and C 3 , as well as signals indicating the presence of organic compounds with hetero elements, such as OH, NH, and CN. Their intensity decreases very markedly with increasing numbers of atoms. Among the signals from bi-atomic clusters, those coming from elements with large mass differences are most intense. The use of plasma SNMS with organic compounds has shown that, except for spurious chemical reactions induced by ion bombardment and photodesorption by the photons of the plasma, it is possible to analyze with resolution in depth, elements of organic solids. A more detailed molecular characterization of organic compounds is possible by means of SIMS on the basis of multi-atomic fragments and by comparison with suitable signal patterns. (orig./BBR) [de

SimPackJ/S: a web-oriented toolkit for discrete event simulation

Science.gov (United States)

Park, Minho; Fishwick, Paul A.

2002-07-01

SimPackJ/S is the JavaScript and Java version of SimPack, which means SimPackJ/S is a collection of JavaScript and Java libraries and executable programs for computer simulations. The main purpose of creating SimPackJ/S is that we allow existing SimPack users to expand simulation areas and provide future users with a freeware simulation toolkit to simulate and model a system in web environments. One of the goals for this paper is to introduce SimPackJ/S. The other goal is to propose translation rules for converting C to JavaScript and Java. Most parts demonstrate the translation rules with examples. In addition, we discuss a 3D dynamic system model and overview an approach to 3D dynamic systems using SimPackJ/S. We explain an interface between SimPackJ/S and the 3D language--Virtual Reality Modeling Language (VRML). This paper documents how to translate C to JavaScript and Java and how to utilize SimPackJ/S within a 3D web environment.

SimNEC : research platform for studying human functioning in NCW

NARCIS (Netherlands)

Veen, H.A.H.C. van; Graaf, B. de; Essens, P.

2006-01-01

SimNEC is TNOÆs grand scheme for experimentally studying human factors issues related to NEC/NCW. The research platform SimNEC consists of multidisciplinary expert teams, long-term research programmes, and a local network of state-of-the-art simulator modules. SimNEC does not focus on technology,

On-the-fly depth profiling during ablation with ultrashort laser pulses: A tool for accurate micromachining and laser surgery

International Nuclear Information System (INIS)

Lausten, Rune; Balling, Peter

2001-01-01

A method for accurate depth profiling of a region subjected to ablation with ultrashort laser pulses is demonstrated. Time-gated imaging of the backscattered radiation from the ablation region is performed in a geometry, which allows the depth along a chosen axis on the sample to be determined with a single measurement. The profiling system has a spatial resolution of a few micrometers and applications are promoted by the fact that the measurement is performed with the same pulse that undertakes ablation. This also indicates that the method is inherently suited for in situ on-the-fly measurements. Copyright 2001 American Institute of Physics

Chemical 3D-imaging of glass inclusions from allende (CV3) olivine via SIMS: A new insight on chondrule formation conditions

Science.gov (United States)

Florentin, L.; Deloule, E.; Faure, F.; Mangin, D.

2018-06-01

Natural glass inclusions - hosted in Mg-rich olivines from Allende (CV3) type I chondrules - and synthetic melt inclusions - trapped in forsterite crystallized from CMAS (CaO-MgO-Al2O3-SiO2) melts - were mapped by Secondary Ion Mass Spectrometry (SIMS) for CMAS major oxides. The first ever 3D chemical images of extra-terrestrial glass inclusions were obtained, along with chemical depth profiles for each oxide. Results show similar patterns for both synthetic glass inclusions (trapped in olivine formed by slow crystallization in a magmatic liquid) and natural inclusions from Allende's olivines. No incompatible-rich boundary layer or diffusion pattern was observed in either case. The absence of an incompatible-rich boundary layer suggests that the olivine overgrowth surrounding glass inclusions in Allende's olivines was formed during slow cooling of the host olivine and likely the surrounding chondrule. This provides new constraints on the cooling rates of type I chondrules.

DS86 neutron dose. Monte Carlo analysis for depth profile of {sup 152}Eu activity in a large stone sample

Energy Technology Data Exchange (ETDEWEB)

Endo, Satoru; Hoshi, Masaharu; Takada, Jun [Hiroshima Univ. (Japan). Research Inst. for Radiation Biology and Medicine; Iwatani, Kazuo; Oka, Takamitsu; Shizuma, Kiyoshi; Imanaka, Tetsuji; Fujita, Shoichiro; Hasai, Hiromi

1999-06-01

The depth profile of {sup 152}Eu activity induced in a large granite stone pillar by Hiroshima atomic bomb neutrons was calculated by a Monte Carlo N-Particle Transport Code (MCNP). The pillar was on the Motoyasu Bridge, located at a distance of 132 m (WSW) from the hypocenter. It was a square column with a horizontal sectional size of 82.5 cm x 82.5 cm and height of 179 cm. Twenty-one cells from the north to south surface at the central height of the column were specified for the calculation and {sup 152}Eu activities for each cell were calculated. The incident neutron spectrum was assumed to be the angular fluence data of the Dosimetry System 1986 (DS86). The angular dependence of the spectrum was taken into account by dividing the whole solid angle into twenty-six directions. The calculated depth profile of specific activity did not agree with the measured profile. A discrepancy was found in the absolute values at each depth with a mean multiplication factor of 0.58 and also in the shape of the relative profile. The results indicated that a reassessment of the neutron energy spectrum in DS86 is required for correct dose estimation. (author)

A Multipathway Model for High Explosives and Barium Transport Using GoldSim

Science.gov (United States)

Newman, B. D.; Hickmott, D. D.; Keating, E. H.; Robinson, B. A.; Gard, M. O.

2002-05-01

Outfalls from High Explosives (HE) production sites at Los Alamos National Laboratory (LANL) discharged RDX, TNT, HMX, and barium contaminated waters onto a mesa /canyon system on the western edge of the Pajarito Plateau from 1944 to 1996. HE concentrations in surface soils ranged to over 20 wt.%, and HE in waters range to over 800 ug/L. HE in water is present in springs, surface waters, alluvial waters and deep perched (> 700 ft. depth) and possibly regional (> 1200 ft depth) groundwaters. Barium concentrations range to over 4 wt.% in sediments, and to over 5000 ug/L in spring and alluvial waters. Because of the size of contaminant inventories and observations of HE in the perched zone and possibly deeper, there has been concern that there may be a long-term risk at a downgradient drinking water supply well. To address this concern, a GoldSim multipathway model was developed to simulate transport of HE and barium from source areas to the supply well. The objectives of the modeling effort were to generate a preliminary assessment of potential concentrations at the supply well and to identify any model components/parameters that require additional characterization based on model sensitivity and uncertainty. The model evaluates two main source areas, one is controlled by flow through the mesa vadose zone, and the other by flow through the canyon vadose zone. The two vadose zone modules feed into a saturated zone module that terminates at a pumping well (drinking water) module. The hydrogeology of the site is extremely complex and includes a heterogeneous, unfractured/fractured tuff vadose zone geology, ponds, springs, alluvial aquifers, a perennial stream reach, and two deep aquifers. Because of this complexity, and limited characterization and contaminant inventory information, we used a stochastic approach to quantitatively represent model/parameter uncertainties. Model parameters were developed using a variety of information including flow and transport modeling

Oxygen accumulation on metal surfaces investigated by XPS, AES and LEIS, an issue for sputter depth profiling under UHV conditions

Energy Technology Data Exchange (ETDEWEB)

Steinberger, R., E-mail: roland.steinberger@jku.at [Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz (Austria); Celedón, C.E., E-mail: carlos.celedon@usm.cl [Institut für Experimentalphysik, Abteilung für Atom- und Oberflächenphysik, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz (Austria); Departamento de Física, Universidad Técnica Federico Santa María, Valaparaíso, Casilla 110-V (Chile); Bruckner, B., E-mail: barbara.bruckner@jku.at [Institut für Experimentalphysik, Abteilung für Atom- und Oberflächenphysik, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz (Austria); Roth, D., E-mail: dietmar.roth@jku.at [Institut für Experimentalphysik, Abteilung für Atom- und Oberflächenphysik, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz (Austria); Duchoslav, J., E-mail: jiri.duchoslav@jku.at [Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz (Austria); Arndt, M., E-mail: martin.arndt@voestalpine.com [voestalpine Stahl GmbH, voestalpine-Straße 3, 4031 Linz (Austria); Kürnsteiner, P., E-mail: p.kuernsteiner@mpie.de [Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz (Austria); and others

2017-07-31

Highlights: • Investigation on the impact of residual gas prevailing in UHV chambers. • For some metals detrimental oxygen uptake could be observed within shortest time. • Totally different behavior was found: no changes, solely adsorption and oxidation. • The UHV residual gas may severely corrupt results obtained from depth profiling. • A well-considered data acquisition sequence is the key for reliable depth profiles. - Abstract: Depth profiling using surface sensitive analysis methods in combination with sputter ion etching is a common procedure for thorough material investigations, where clean surfaces free of any contamination are essential. Hence, surface analytic studies are mostly performed under ultra-high vacuum (UHV) conditions, but the cleanness of such UHV environments is usually overrated. Consequently, the current study highlights the in principle known impact of the residual gas on metal surfaces (Fe, Mg, Al, Cr and Zn) for various surface analytics methods, like X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and low-energy ion scattering (LEIS). The investigations with modern, state-of-the-art equipment showed different behaviors for the metal surfaces in UHV during acquisition: (i) no impact for Zn, even after long time, (ii) solely adsorption of oxygen for Fe, slight and slow changes for Cr and (iii) adsorption accompanied by oxide formation for Al and Mg. The efficiency of different counter measures was tested and the acquired knowledge was finally used for ZnMgAl coated steel to obtain accurate depth profiles, which exhibited before serious artifacts when data acquisition was performed in an inconsiderate way.

Lithium diffusion in polyether ether ketone and polyimide stimulated by in situ electron irradiation and studied by the neutron depth profiling method

Science.gov (United States)

Vacik, J.; Hnatowicz, V.; Attar, F. M. D.; Mathakari, N. L.; Dahiwale, S. S.; Dhole, S. D.; Bhoraskar, V. N.

2014-10-01

Diffusion of lithium from a LiCl aqueous solution into polyether ether ketone (PEEK) and polyimide (PI) assisted by in situ irradiation with 6.5 MeV electrons was studied by the neutron depth profiling method. The number of the Li atoms was found to be roughly proportional to the diffusion time. Regardless of the diffusion time, the measured depth profiles in PEEK exhibit a nearly exponential form, indicating achievement of a steady-state phase of a diffusion-reaction process specified in the text. The form of the profiles in PI is more complex and it depends strongly on the diffusion time. For the longer diffusion time, the profile consists of near-surface bell-shaped part due to Fickian-like diffusion and deeper exponential part.

Sim-based detection tools to minimize motorcycle theft

Science.gov (United States)

Triansyah, F. A.; Mudhafar, Z.; Lestari, C.; Amilia, S.; Ruswana, N. D.; Junaeti, E.

2018-05-01

The number of motorcycles in Indonesia spurs the increased criminal acts of motorcycle theft. In addition, the number of motorcycles increases the number of traffic accidents caused by improper motorists. The purpose of this research is to make METEOR (SIM Detector) which is a tool to detect the feasibility of SIM (driver license) which is used to operate and protect motorcycle against theft. METEOR is made through the assembly, encoding, testing, and sequencing stages of the motorcycle. Based on the research that has been done, METEOR generated that can detect the SIM by using additional RFID chip and can be set on the motorcycle. Without the proper SIM, motorized chests coupled with METEOR cannot be turned on. So it can be concluded that motorcycles with additional METEOR is able to be a safety device against theft and as a tool to test the feasibility of motorcycle riders.

The eponymous Dr James Marion Sims MD, LLD (1813-1883).

Science.gov (United States)

West, M J; Irvine, L M

2015-02-01

Dr James Marion Sims was born in 1813 in Lancaster County, South Carolina. It was while pioneering numerous surgical procedures in Alabama that in 1849 he achieved the outstanding landmark in medical history of successfully, and consistently, repairing vesicovaginal fistulae. Sims soon developed a reputation as a fine surgeon, with new operations and techniques, using novel surgical instruments and his innovative approaches frequently published. Moving to New York City in 1853, he further established hospitals devoted entirely to women's health. Sims was controversial, with flamboyant descriptions of self-confident success, yet they were tempered with sober reflection of failure and loss. Today we remain with the Sims speculum and Sims position, eponymous tributes to his accomplishments as the 'Father of Gynaecology'. © The Author(s) 2013 Reprints and permissions: sagepub.co.uk/journalsPermissions.nav.

Interdiffusion in epitaxial, single-crystalline Au/Ag thin films studied by Auger electron spectroscopy sputter-depth profiling and positron annihilation

International Nuclear Information System (INIS)

Noah, Martin A.; Flötotto, David; Wang, Zumin; Reiner, Markus; Hugenschmidt, Christoph; Mittemeijer, Eric J.

2016-01-01

Interdiffusion in epitaxial, single-crystalline Au/Ag bilayered thin films on Si (001) substrates was investigated by Auger electron spectroscopy (AES) sputter-depth profiling and by in-situ positron annihilation Doppler broadening spectroscopy (DBS). By the combination of these techniques identification of the role of vacancy sources and sinks on interdiffusion in the Au/Ag films was possible. It was found that with precise knowledge of the concentration-dependent self-diffusion and impurity diffusion coefficients a distinction between the Darken-Manning treatment and Nernst-Planck treatment can be made, which is not possible on the basis of the determined concentration-depth profiles alone.

Xenon migration in UO{sub 2} under irradiation studied by SIMS profilometry

Energy Technology Data Exchange (ETDEWEB)

Marchand, B. [Université de Lyon, CNRS/IN2P3, Université Lyon 1, Institut de Physique Nucléaire de Lyon, 4 rue Enrico Fermi, F-69622 Villeurbanne cedex (France); AREVA, AREVA NP, 10 rue Juliette Récamier, F-69456 Lyon (France); Moncoffre, N. [Université de Lyon, CNRS/IN2P3, Université Lyon 1, Institut de Physique Nucléaire de Lyon, 4 rue Enrico Fermi, F-69622 Villeurbanne cedex (France); Pipon, Y., E-mail: pipon@ipnl.in2p3.fr [Université de Lyon, CNRS/IN2P3, Université Lyon 1, Institut de Physique Nucléaire de Lyon, 4 rue Enrico Fermi, F-69622 Villeurbanne cedex (France); Université de Lyon, Université Lyon 1, IUT Lyon 1, 43 bd du 11 novembre 1918, 69 622 Villeurbanne cedex (France); Bérerd, N. [Université de Lyon, CNRS/IN2P3, Université Lyon 1, Institut de Physique Nucléaire de Lyon, 4 rue Enrico Fermi, F-69622 Villeurbanne cedex (France); Université de Lyon, Université Lyon 1, IUT Lyon 1, 43 bd du 11 novembre 1918, 69 622 Villeurbanne cedex (France); Garnier, C. [AREVA, AREVA NP, 10 rue Juliette Récamier, F-69456 Lyon (France); Raimbault, L. [Ecole des Mines de Paris, Centre de Géosciences, 35 rue Saint Honoré, F-77305 Fontainebleau cedex (France); Sainsot, P. [Université de Lyon, Université Lyon 1, LaMCoS, INSA-Lyon, CNRS UMR5259, F-69621 Villeurbanne cedex (France); and others

2013-09-15

During Pressurized Water Reactor operation, around 25% of the created Fission Products (FP) are Xenon and Krypton. They have a low solubility in the nuclear fuel and can either (i) agglomerate into bubbles which induce mechanical stress in the fuel pellets or (ii) be released from the pellets, increasing the pressure within the cladding and decreasing the thermal conductivity of the gap between pellets and cladding. After fifty years of studies on the nuclear fuel, all mechanisms of Fission Gas Release (FGR) are still not fully understood. This paper aims at studying the FGR mechanisms by decoupling thermal and irradiation effects and by assessing the Xenon behavior for the first time by profilometry. Samples are first implanted with {sup 136}Xe at 800 keV corresponding to a projected range of 140 nm. They are then either annealed in the temperature range 1400–1600 °C, or irradiated with heavy energy ions (182 MeV Iodine) at Room Temperature (RT), 600 °C or 1000 °C. Depth profiles of implanted Xenon in UO{sub 2} are determined by Secondary Ion Mass Spectrometry (SIMS). It is shown that Xenon is mobile during irradiation at 1000 °C. In contrast, thermal treatments do not induce any Xenon migration process: these results are correlated to the formation of Xenon bubbles observed by Transmission Electron Microscopy.

Evaluation of the airway of the SimMan full-scale patient simulator

DEFF Research Database (Denmark)

Hesselfeldt, R; Kristensen, M S; Rasmussen, L S

2005-01-01

SimMan is a full-scale patient simulator, capable of simulating normal and pathological airways. The performance of SimMan has never been critically evaluated.......SimMan is a full-scale patient simulator, capable of simulating normal and pathological airways. The performance of SimMan has never been critically evaluated....

Structural analysis of poly-SUMO chain recognition by the RNF4-SIMs domain.

Science.gov (United States)

Kung, Camy C-H; Naik, Mandar T; Wang, Szu-Huan; Shih, Hsiu-Ming; Chang, Che-Chang; Lin, Li-Ying; Chen, Chia-Lin; Ma, Che; Chang, Chi-Fon; Huang, Tai-Huang

2014-08-15

The E3 ubiquitin ligase RNF4 (RING finger protein 4) contains four tandem SIM [SUMO (small ubiquitin-like modifier)-interaction motif] repeats for selective interaction with poly-SUMO-modified proteins, which it targets for degradation. We employed a multi-faceted approach to characterize the structure of the RNF4-SIMs domain and the tetra-SUMO2 chain to elucidate the interaction between them. In solution, the SIM domain was intrinsically disordered and the linkers of the tetra-SUMO2 were highly flexible. Individual SIMs of the RNF4-SIMs domains bind to SUMO2 in the groove between the β2-strand and the α1-helix parallel to the β2-strand. SIM2 and SIM3 bound to SUMO with a high affinity and together constituted the recognition module necessary for SUMO binding. SIM4 alone bound to SUMO with low affinity; however, its contribution to tetra-SUMO2 binding avidity is comparable with that of SIM3 when in the RNF4-SIMs domain. The SAXS data of the tetra-SUMO2-RNF4-SIMs domain complex indicate that it exists as an ordered structure. The HADDOCK model showed that the tandem RNF4-SIMs domain bound antiparallel to the tetra-SUMO2 chain orientation and wrapped around the SUMO protamers in a superhelical turn without imposing steric hindrance on either molecule.

Sim Track User's Manual (v 1.0)

Energy Technology Data Exchange (ETDEWEB)

Luo, Y.

2010-01-27

SimTrack is a simple c++ library designed for the numeric particle tracking in the high energy accelerators. It adopts the 4th order symplectic integrator for the optical transport in the magnetic elements. The 4-D and 6-D weak-strong beam-beam treatments are integrated in it for the beam-beam studies. SimTrack is written with c++ class and standard template library. It provides versatile functions to manage elements and lines. It supports a large range of types of elements. New type of element can be easily created in the library. SimTrack calculates Twiss, coupling and fits tunes, chromaticities and corrects closed orbits. AC dipole and AC multipole are available in this library. SimTrack allows change of element parameters during tracking.

MultiSimPC: a multilevel logic simulator for microcomputers

OpenAIRE

Kelly, John S.

1986-01-01

Approved for public release; distribution is unlimited This thesis describes extensions to a multilevel VLSI logic simulator named MultiSim. Originally developed by Dr. Ausif Mahmood of the Washington State University for large minicomputers such as the VAX-11/780; MultiSim is now operational on desktop microcomputers costing only a few thousand dollars. In addition, MultiSim has been expanded to include provisions for adding user-defined primitive cells to the circuit library, true mu...

CREST-SAFE: Snow LST validation, wetness profiler creation, and depth/SWE product development

Science.gov (United States)

Perez Diaz, C. L.; Lakhankar, T.; Romanov, P.; Khanbilvardi, R.; Munoz Barreto, J.; Yu, Y.

2017-12-01

CREST-SAFE: Snow LST validation, wetness profiler creation, and depth/SWE product development The Field Snow Research Station (also referred to as Snow Analysis and Field Experiment, SAFE) is operated by the NOAA Center for Earth System Sciences and Remote Sensing Technologies (CREST) in the City University of New York (CUNY). The field station is located within the premises of the Caribou Municipal Airport (46°52'59'' N, 68°01'07'' W) and in close proximity to the National Weather Service (NWS) Regional Forecast Office. The station was established in 2010 to support studies in snow physics and snow remote sensing. The Visible Infrared Imager Radiometer Suite (VIIRS) Land Surface Temperature (LST) Environmental Data Record (EDR) and Moderate Resolution Imaging Spectroradiometer (MODIS) LST product (provided by the Terra and Aqua Earth Observing System satellites) were validated using in situ LST (T-skin) and near-surface air temperature (T-air) observations recorded at CREST-SAFE for the winters of 2013 and 2014. Results indicate that T-air correlates better than T-skin with VIIRS LST data and that the accuracy of nighttime LST retrievals is considerably better than that of daytime. Several trends in the MODIS LST data were observed, including the underestimation of daytime values and night-time values. Results indicate that, although all the data sets showed high correlation with ground measurements, day values yielded slightly higher accuracy ( 1°C). Additionally, we created a liquid water content (LWC)-profiling instrument using time-domain reflectometry (TDR) at CREST-SAFE and tested it during the snow melt period (February-April) immediately after installation in 2014. Results displayed high agreement when compared to LWC estimates obtained using empirical formulas developed in previous studies, and minor improvement over wet snow LWC estimates. Lastly, to improve on global snow cover mapping, a snow product capable of estimating snow depth and snow water

The national psychological/personality profile of Romanians: An in depth analysis of the regional national psychological/personality profile of Romanians

Directory of Open Access Journals (Sweden)

David, D.

2015-12-01

Full Text Available In this article we perform an in depth analysis of the national psychological/personality profile of Romanians. Following recent developments in the field (see Rentfrow et al., 2013; 2015, we study the regional national psychological/personality profile of Romanians, based on the Big Five model (i.e., NEO PI/R. Using a representative sample (N1 = 1000, we performed a cluster analysis and identified two bipolar personality profiles in the population: cluster 1, called “Factor X-”, characterized by high neuroticism and low levels of extraversion, openness, agreeableness, and conscientiousness, and cluster 2, called “Factor X+”, characterized by the opposite configuration in personality traits, low neuroticism and high levels of extraversion, openness, agreeableness, and conscientiousness. The same two cluster pattern/solution emerged in other samples (N = 2200, with other Big Five-based instruments, and by using various methods of data (e.g., direct vs. reversed item score, controlling for item desirability and cluster (i.e., with and without “running means” analyses. These two profiles are quite evenly distributed in the overall population, but also across all geographical regions. Moreover, comparing the distribution of the five personality traits, we found just few small differences between the eight geographical divisions that we used for our analysis. These results suggest that the regional national psychological/personality profile of Romania is quite homogenous. Directions for harnessing the potential of both personality profiles are presented to the reader. Other implications based on the bipolar and fractal structure of the personality profile are discussed from an interdisciplinary perspective.

On depth profiling of hydrogen and helium isotopes and its application to ion-implantation studies

International Nuclear Information System (INIS)

Boettiger, J.

1979-01-01

The thesis is divided into two parts, the first being a general review of the experimental methods for depth profiling of light isotopes, where ion beams are used. In the second part, studies of ion implantation of hydrogen and helium isotopes, applying the techniques discussed in the first part, are described. The paper summarizes recent experimental results and discusses recent developments. (Auth.)

Depth-kymography of vocal fold vibrations : part II. Simulations and direct comparisons with 3D profile measurements

NARCIS (Netherlands)

de Mul, Frits F. M.; George, Nibu A.; Qiu, Qingjun; Rakhorst, Gerhard; Schutte, Harm K.

2009-01-01

We report novel direct quantitative comparisons between 3D profiling measurements and simulations of human vocal fold vibrations. Until now, in human vocal folds research, only imaging in a horizontal plane was possible. However, for the investigation of several diseases, depth information is

The effect of particle properties on the depth profile of buoyant plastics in the ocean

Science.gov (United States)

Kooi, Merel; Reisser, Julia; Slat, Boyan; Ferrari, Francesco F.; Schmid, Moritz S.; Cunsolo, Serena; Brambini, Roberto; Noble, Kimberly; Sirks, Lys-Anne; Linders, Theo E. W.; Schoeneich-Argent, Rosanna I.; Koelmans, Albert A.

2016-10-01

Most studies on buoyant microplastics in the marine environment rely on sea surface sampling. Consequently, microplastic amounts can be underestimated, as turbulence leads to vertical mixing. Models that correct for vertical mixing are based on limited data. In this study we report measurements of the depth profile of buoyant microplastics in the North Atlantic subtropical gyre, from 0 to 5 m depth. Microplastics were separated into size classes (0.5-1.5 and 1.5-5.0 mm) and types (‘fragments’ and ‘lines’), and associated with a sea state. Microplastic concentrations decreased exponentially with depth, with both sea state and particle properties affecting the steepness of the decrease. Concentrations approached zero within 5 m depth, indicating that most buoyant microplastics are present on or near the surface. Plastic rise velocities were also measured, and were found to differ significantly for different sizes and shapes. Our results suggest that (1) surface samplers such as manta trawls underestimate total buoyant microplastic amounts by a factor of 1.04-30.0 and (2) estimations of depth-integrated buoyant plastic concentrations should be done across different particle sizes and types. Our findings can assist with improving buoyant ocean plastic vertical mixing models, mass balance exercises, impact assessments and mitigation strategies.

CoaSim Guile Manual — Using the Guile-based CoaSim Simulator

DEFF Research Database (Denmark)

Mailund, T

2006-01-01

CoaSim is a tool for simulating the coalescent process with recombination and geneconversion, under either constant population size or exponential population growth. It effectively constructs the ancestral recombination graph for a given number of chromosomes and uses this to simulate samples...

An angle-resolved, wavelength-dispersive x-ray fluorescence spectrometer for depth profile analysis of ion-implanted semiconductors using synchrotron radiation

Science.gov (United States)

Schmitt, W.; Hormes, J.; Kuetgens, U.; Gries, W. H.

1992-01-01

An apparatus for angle-resolved, wavelength-dispersive x-ray fluorescence spectroscopy with synchrotron radiation has been built and tested at the beam line BN2 of the Bonn electron stretcher and accelerator (ELSA). The apparatus is to be used for nondestructive depth profile analysis of ion-implanted semiconductors as part of the multinational Versailles Project of Advanced Materials and Standards (VAMAS) project on ion-implanted reference materials. In particular, the centroid depths of depth profiles of various implants is to be determined by use of the angle-resolved signal ratio technique. First results of measurements on implants of phosphorus (100 keV, 1016 cm-2) and sulfur (200 keV, 1014 cm-2) in silicon wafers using ``white'' synchrotron radiation are presented and suggest that it should be generally possible to measure the centroid depth of an implant at dose densities as low as 1014 cm-2. Some of the apparative and technical requirements are discussed which are peculiar to the use of synchrotron radiation in general and to the use of nonmonochromatized radiation in particular.

An angle-resolved, wavelength-dispersive x-ray fluorescence spectrometer for depth profile analysis of ion-implanted semiconductors using synchrotron radiation

International Nuclear Information System (INIS)

Schmitt, W.; Hormes, J.; Kuetgens, U.; Gries, W.H.

1992-01-01

An apparatus for angle-resolved, wavelength-dispersive x-ray fluorescence spectroscopy with synchrotron radiation has been built and tested at the beam line BN2 of the Bonn electron stretcher and accelerator (ELSA). The apparatus is to be used for nondestructive depth profile analysis of ion-implanted semiconductors as part of the multinational Versailles Project of Advanced Materials and Standards (VAMAS) project on ion-implanted reference materials. In particular, the centroid depths of depth profiles of various implants is to be determined by use of the angle-resolved signal ratio technique. First results of measurements on implants of phosphorus (100 keV, 10 16 cm -2 ) and sulfur (200 keV, 10 14 cm -2 ) in silicon wafers using ''white'' synchrotron radiation are presented and suggest that it should be generally possible to measure the centroid depth of an implant at dose densities as low as 10 14 cm -2 . Some of the apparative and technical requirements are discussed which are peculiar to the use of synchrotron radiation in general and to the use of nonmonochromatized radiation in particular

SIMS device with quadrupole mass spectrometer

International Nuclear Information System (INIS)

Szigethy, D.; Riedel, M.

1980-01-01

A versatile secondary ion mass spectrometer (SIMS) has been designed and constructed. The device is applicable for dinamic and static SIMS investigations. The sputtering and ionisation can be studied simultaneously. Oil diffusion pumps and an auxiliary ion-getter pump are used. A commercial ion gun is used in the working chamber. The secondary ion optics assures the preliminary filtering of fast ions, and the collection of sputtered ions for a separate microprobe analysis. The performance of the apparatus is illustrated with examples. (R.J.)

One- and two-dimensional dopant/carrier profiling for ULSI

Science.gov (United States)

Vandervorst, W.; Clarysse, T.; De Wolf, P.; Trenkler, T.; Hantschel, T.; Stephenson, R.; Janssens, T.

1998-11-01

Dopant/carrier profiles constitute the basis of the operation of a semiconductor device and thus play a decisive role in the performance of a transistor and are subjected to the same scaling laws as the other constituents of a modern semiconductor device and continuously evolve towards shallower and more complex configurations. This evolution has increased the demands on the profiling techniques in particular in terms of resolution and quantification such that a constant reevaluation and improvement of the tools is required. As no single technique provides all the necessary information (dopant distribution, electrical activation,..) with the requested spatial and depth resolution, the present paper attempts to provide an assessment of those tools which can be considered as the main metrology technologies for ULSI-applications. For 1D-dopant profiling secondary ion mass spectrometry (SIMS) has progressed towards a generally accepted tool meeting the requirements. For 1D-carrier profiling spreading resistance profiling and microwave surface impedance profiling are envisaged as the best choices but extra developments are required to promote them to routinely applicable methods. As no main metrology tool exist for 2D-dopant profiling, main emphasis is on 2D-carrier profiling tools based on scanning probe microscopy. Scanning spreading resistance (SSRM) and scanning capacitance microscopy (SCM) are the preferred methods although neither of them already meets all the requirements. Complementary information can be extracted from Nanopotentiometry which samples the device operation in more detail. Concurrent use of carrier profiling tools, Nanopotentiometry, analysis of device characteristics and simulations is required to provide a complete characterization of deep submicron devices.

SimTCM: A human patient simulator with application to diagnostic accuracy studies of Chinese medicine.

Science.gov (United States)

Ferreira, Arthur de Sá; Pacheco, Antonio Guilherme

2015-01-01

The aim of this work is to develop and implement the SimTCM, an advanced computational model that incorporates relevant aspects from traditional Chinese medicine (TCM) theory as well as advanced statistical and epidemiological techniques for simulation and analysis of human patients. SimTCM presents five major attributes for simulation: representation of true and false profiles for any single pattern; variable count of manifestations for each manifestation profile; empirical distributions of patterns and manifestations in a disease-specific population; incorporation of uncertainty in clinical data; and the combination of the four examinations. The proposed model is strengthened by following international standards for reporting diagnostic accuracy studies, and incorporates these standards in its treatment of study population, sample size calculation, data collection of manifestation profiles, exclusion criteria and missing data handling, reference standards, randomization and blinding, and test reproducibility. Simulations using data from patients diagnosed with hypertension and post-stroke sensory-motor impairments yielded no significant differences between expected and simulated frequencies of patterns (P=0.22 or higher). Time for convergence of simulations varied from 9.90 s (9.80, 10.27) to 28.31 s (26.33, 29.52). The ratio iteration profile necessary for convergence varied between 1:1 and 5:1. This model is directly connected to forthcoming models in a large project to design and implement the SuiteTCM: ProntTCM, SciTCM, DiagTCM, StudentTCM, ResearchTCM, HerbsTCM, AcuTCM, and DataTCM. It is expected that the continuity of the SuiteTCM project enhances the evidence-based practice of Chinese medicine. The software is freely available for download at: http://suitetcm.unisuam.edu.br.

Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

Science.gov (United States)

Beainy, Georges; Cerba, Tiphaine; Bassani, Franck; Martin, Mickaël; Baron, Thierry; Barnes, Jean-Paul

2018-05-01

Time of flight secondary ion mass spectrometry (ToF-SIMS) is a well-adapted analytical method for the chemical characterization of concentration profiles in layered or multilayered materials. However, under ion beam bombardment, initially smooth material surface becomes morphologically unstable. This leads to abnormal secondary ion yields and depth profile distortions. In this contribution, we explore the surface topography and roughening evolution induced by O2+ ion bombardment on GaSb/InAs multilayers. We demonstrate the formation of nanodots and ripples patterning according to the ion beam energy. Since the latter are undesirable for ToF-SIMS analysis, we managed to totally stop their growth by using simultaneously sample rotation and oxygen flooding. This unprecedented coupling between these two latter mechanisms leads to a significant enhancement in depth profiles resolution.

The portrayal of J. Marion Sims' controversial surgical legacy.

Science.gov (United States)

Spettel, Sara; White, Mark Donald

2011-06-01

In the mid 1800s Dr. J. Marion Sims reported the successful repair of vesicovaginal fistulas with a technique he developed by performing multiple operations on female slaves. A venerated physician in his time, the legacy of Dr. Sims is controversial and represents a significant chapter in the mistreatment of African-Americans by the medical establishment. This review compares the modern debate surrounding his legacy with the presentation of his operation in widely consulted urological texts and journals. A literature review was performed of medical, sociological and periodical sources (1851 to the present) regarding J. Marion Sims and vesicovaginal fistula repair. During the last several decades, while the controversy around Dr. Sims' surgical development has produced a steady stream of articles in the historical and popular literature, relatively little mention is found in standard urology textbooks or journals. With increased public attention, some have debated the removal or modification of public tributes to Dr. Sims. This move has been countered by arguments against the validity of judging a 19th century physician by modern standards. While historians, ethicists and the popular press have debated Dr. Sims' legacy, medical sources have continued to portray him unquestionably as a great figure in medical history. This division keeps the medical profession uninformed and detached from the public debate on his legacy and, thus, the larger issues of ethical treatment of surgical patients. Copyright © 2011 American Urological Association Education and Research, Inc. Published by Elsevier Inc. All rights reserved.

Objective characterization of bruise evolution using photothermal depth profiling and Monte Carlo modeling

Science.gov (United States)

Vidovič, Luka; Milanič, Matija; Majaron, Boris

2015-01-01

Pulsed photothermal radiometry (PPTR) allows noninvasive determination of laser-induced temperature depth profiles in optically scattering layered structures. The obtained profiles provide information on spatial distribution of selected chromophores such as melanin and hemoglobin in human skin. We apply the described approach to study time evolution of incidental bruises (hematomas) in human subjects. By combining numerical simulations of laser energy deposition in bruised skin with objective fitting of the predicted and measured PPTR signals, we can quantitatively characterize the key processes involved in bruise evolution (i.e., hemoglobin mass diffusion and biochemical decomposition). Simultaneous analysis of PPTR signals obtained at various times post injury provides an insight into the variations of these parameters during the bruise healing process. The presented methodology and results advance our understanding of the bruise evolution and represent an important step toward development of an objective technique for age determination of traumatic bruises in forensic medicine.

Improvement of Depth Profiling into Biotissues Using Micro Electrical Impedance Spectroscopy on a Needle with Selective Passivation.

Science.gov (United States)

Yun, Joho; Kim, Hyeon Woo; Lee, Jong-Hyun

2016-12-21

A micro electrical impedance spectroscopy (EIS)-on-a-needle for depth profiling (μEoN-DP) with a selective passivation layer (SPL) on a hypodermic needle was recently fabricated to measure the electrical impedance of biotissues along with the penetration depths. The SPL of the μEoN-DP enabled the sensing interdigitated electrodes (IDEs) to contribute predominantly to the measurement by reducing the relative influence of the connection lines on the sensor output. The discrimination capability of the μEoN-DP was verified using phosphate-buffered saline (PBS) at various concentration levels. The resistance and capacitance extracted through curve fitting were similar to those theoretically estimated based on the mixing ratio of PBS and deionized water; the maximum discrepancies were 8.02% and 1.85%, respectively. Depth profiling was conducted using four-layered porcine tissue to verify the effectiveness of the discrimination capability of the μEoN-DP. The magnitude and phase between dissimilar porcine tissues (fat and muscle) were clearly discriminated at the optimal frequency of 1 MHz. Two kinds of simulations, one with SPL and the other with complete passivation layer (CPL), were performed, and it was verified that the SPL was advantageous over CPL in the discrimination of biotissues in terms of sensor output.

Improvement of Depth Profiling into Biotissues Using Micro Electrical Impedance Spectroscopy on a Needle with Selective Passivation

Directory of Open Access Journals (Sweden)

Joho Yun

2016-12-01

Full Text Available A micro electrical impedance spectroscopy (EIS-on-a-needle for depth profiling (μEoN-DP with a selective passivation layer (SPL on a hypodermic needle was recently fabricated to measure the electrical impedance of biotissues along with the penetration depths. The SPL of the μEoN-DP enabled the sensing interdigitated electrodes (IDEs to contribute predominantly to the measurement by reducing the relative influence of the connection lines on the sensor output. The discrimination capability of the μEoN-DP was verified using phosphate-buffered saline (PBS at various concentration levels. The resistance and capacitance extracted through curve fitting were similar to those theoretically estimated based on the mixing ratio of PBS and deionized water; the maximum discrepancies were 8.02% and 1.85%, respectively. Depth profiling was conducted using four-layered porcine tissue to verify the effectiveness of the discrimination capability of the μEoN-DP. The magnitude and phase between dissimilar porcine tissues (fat and muscle were clearly discriminated at the optimal frequency of 1 MHz. Two kinds of simulations, one with SPL and the other with complete passivation layer (CPL, were performed, and it was verified that the SPL was advantageous over CPL in the discrimination of biotissues in terms of sensor output.

HexSim: a modeling environment for ecology and conservation.

Science.gov (United States)

HexSim is a powerful and flexible new spatially-explicit, individual based modeling environment intended for use in ecology, conservation, genetics, epidemiology, toxicology, and other disciplines. We describe HexSim, illustrate past applications that contributed to our >10 year ...

What Can Radiocarbon Depth Profiles Tell Us About The LGM Circulation?

Science.gov (United States)

Burke, A.; Stewart, A.; Adkins, J. F.; Ferrari, R. M.; Thompson, A. F.; Jansen, M. F.

2014-12-01

Published reconstructions of radiocarbon in the Atlantic sector of the Southern Ocean indicate that there is a mid-depth maximum in radiocarbon age during the last glacial maximum (LGM). This is in contrast to the modern ocean where intense mixing between water masses along shared density surfaces (isopycnals) results in a relatively homogenous radiocarbon profile. A recent study (Ferrari et al. 2014) suggested that the extended Antarctic sea ice cover during the LGM necessitated a shallower boundary between the upper and lower branches of the meridional overturning circulation (MOC). This shoaled boundary lay above major topographic features and their associated strong diapycnal mixing, which isolated dense southern-sourced water in the lower branch of the overturning circulation. This isolation would have allowed radiocarbon to decay, and thus provides a possible explanation for the mid-depth radiocarbon age bulge. We test this hypothesis using an idealized, 2D, residual-mean dynamical model of the global overturning circulation. Concentration distributions of a decaying tracer that is advected by the simulated overturning are compared to published radiocarbon data. We test the sensitivity of the mid-depth radiocarbon age to changes in sea ice extent, wind strength, and isopycnal and diapycnal diffusion. The mid-depth radiocarbon age bulge is most likely caused by the different circulation geometry, associated with increased sea ice extent. In particular, with an LGM-like sea ice extent the upper and lower branches of the MOC no longer share isopycnals, so radiocarbon-rich northern-sourced water is no longer mixed rapidly into the southern-sourced water. However, this process alone cannot explain the magnitude of the glacial radiocarbon anomalies; additional isolation (e.g. from reduced air-sea gas exchange associated with the increased sea ice) is required. Ferrari, R., M. F. Jansen, J. F. Adkins, A. Burke, A. L. Stewart, and A. F. Thompson (2014), Antarctic sea

A scalable infrastructure model for carbon capture and storage: SimCCS

International Nuclear Information System (INIS)

Middleton, Richard S.; Bielicki, Jeffrey M.

2009-01-01

In the carbon capture and storage (CCS) process, CO 2 sources and geologic reservoirs may be widely spatially dispersed and need to be connected through a dedicated CO 2 pipeline network. We introduce a scalable infrastructure model for CCS (simCCS) that generates a fully integrated, cost-minimizing CCS system. SimCCS determines where and how much CO 2 to capture and store, and where to build and connect pipelines of different sizes, in order to minimize the combined annualized costs of sequestering a given amount of CO 2 . SimCCS is able to aggregate CO 2 flows between sources and reservoirs into trunk pipelines that take advantage of economies of scale. Pipeline construction costs take into account factors including topography and social impacts. SimCCS can be used to calculate the scale of CCS deployment (local, regional, national). SimCCS' deployment of a realistic, capacitated pipeline network is a major advancement for planning CCS infrastructure. We demonstrate simCCS using a set of 37 CO 2 sources and 14 reservoirs for California. The results highlight the importance of systematic planning for CCS infrastructure by examining the sensitivity of CCS infrastructure, as optimized by simCCS, to varying CO 2 targets. We finish by identifying critical future research areas for CCS infrastructure

Analysis of the Tikhonov regularization to retrieve thermal conductivity depth-profiles from infrared thermography data

Science.gov (United States)

Apiñaniz, Estibaliz; Mendioroz, Arantza; Salazar, Agustín; Celorrio, Ricardo

2010-09-01

We analyze the ability of the Tikhonov regularization to retrieve different shapes of in-depth thermal conductivity profiles, usually encountered in hardened materials, from surface temperature data. Exponential, oscillating, and sigmoidal profiles are studied. By performing theoretical experiments with added white noises, the influence of the order of the Tikhonov functional and of the parameters that need to be tuned to carry out the inversion are investigated. The analysis shows that the Tikhonov regularization is very well suited to reconstruct smooth profiles but fails when the conductivity exhibits steep slopes. We check a natural alternative regularization, the total variation functional, which gives much better results for sigmoidal profiles. Accordingly, a strategy to deal with real data is proposed in which we introduce this total variation regularization. This regularization is applied to the inversion of real data corresponding to a case hardened AISI1018 steel plate, giving much better anticorrelation of the retrieved conductivity with microindentation test data than the Tikhonov regularization. The results suggest that this is a promising way to improve the reliability of local inversion methods.

Alternative Liquid Fuels Simulation Model (AltSim).

Energy Technology Data Exchange (ETDEWEB)

Williams, Ryan; Baker, Arnold Barry; Drennen, Thomas E.

2009-12-01

The Alternative Liquid Fuels Simulation Model (AltSim) is a high-level dynamic simulation model which calculates and compares the production and end use costs, greenhouse gas emissions, and energy balances of several alternative liquid transportation fuels. These fuels include: corn ethanol, cellulosic ethanol from various feedstocks (switchgrass, corn stover, forest residue, and farmed trees), biodiesel, and diesels derived from natural gas (gas to liquid, or GTL), coal (coal to liquid, or CTL), and coal with biomass (CBTL). AltSim allows for comprehensive sensitivity analyses on capital costs, operation and maintenance costs, renewable and fossil fuel feedstock costs, feedstock conversion ratio, financial assumptions, tax credits, CO{sub 2} taxes, and plant capacity factor. This paper summarizes the structure and methodology of AltSim, presents results, and provides a detailed sensitivity analysis. The Energy Independence and Security Act (EISA) of 2007 sets a goal for the increased use of biofuels in the U.S., ultimately reaching 36 billion gallons by 2022. AltSim's base case assumes EPA projected feedstock costs in 2022 (EPA, 2009). For the base case assumptions, AltSim estimates per gallon production costs for the five ethanol feedstocks (corn, switchgrass, corn stover, forest residue, and farmed trees) of $1.86, $2.32, $2.45, $1.52, and $1.91, respectively. The projected production cost of biodiesel is $1.81/gallon. The estimates for CTL without biomass range from $1.36 to $2.22. With biomass, the estimated costs increase, ranging from $2.19 per gallon for the CTL option with 8% biomass to $2.79 per gallon for the CTL option with 30% biomass and carbon capture and sequestration. AltSim compares the greenhouse gas emissions (GHG) associated with both the production and consumption of the various fuels. EISA allows fuels emitting 20% less greenhouse gases (GHG) than conventional gasoline and diesels to qualify as renewable fuels. This allows several of the

WEC-SIM Phase 1 Validation Testing -- Numerical Modeling of Experiments: Preprint

Energy Technology Data Exchange (ETDEWEB)

Ruehl, Kelley; Michelen, Carlos; Bosma, Bret; Yu, Yi-Hsiang

2016-08-01

The Wave Energy Converter Simulator (WEC-Sim) is an open-source code jointly developed by Sandia National Laboratories and the National Renewable Energy Laboratory. It is used to model wave energy converters subjected to operational and extreme waves. In order for the WEC-Sim code to be beneficial to the wave energy community, code verification and physical model validation is necessary. This paper describes numerical modeling of the wave tank testing for the 1:33-scale experimental testing of the floating oscillating surge wave energy converter. The comparison between WEC-Sim and the Phase 1 experimental data set serves as code validation. This paper is a follow-up to the WEC-Sim paper on experimental testing, and describes the WEC-Sim numerical simulations for the floating oscillating surge wave energy converter.

QuakeSim 2.0

Science.gov (United States)

Donnellan, Andrea; Parker, Jay W.; Lyzenga, Gregory A.; Granat, Robert A.; Norton, Charles D.; Rundle, John B.; Pierce, Marlon E.; Fox, Geoffrey C.; McLeod, Dennis; Ludwig, Lisa Grant

2012-01-01

QuakeSim 2.0 improves understanding of earthquake processes by providing modeling tools and integrating model applications and various heterogeneous data sources within a Web services environment. QuakeSim is a multisource, synergistic, data-intensive environment for modeling the behavior of earthquake faults individually, and as part of complex interacting systems. Remotely sensed geodetic data products may be explored, compared with faults and landscape features, mined by pattern analysis applications, and integrated with models and pattern analysis applications in a rich Web-based and visualization environment. Integration of heterogeneous data products with pattern informatics tools enables efficient development of models. Federated database components and visualization tools allow rapid exploration of large datasets, while pattern informatics enables identification of subtle, but important, features in large data sets. QuakeSim is valuable for earthquake investigations and modeling in its current state, and also serves as a prototype and nucleus for broader systems under development. The framework provides access to physics-based simulation tools that model the earthquake cycle and related crustal deformation. Spaceborne GPS and Inter ferometric Synthetic Aperture (InSAR) data provide information on near-term crustal deformation, while paleoseismic geologic data provide longerterm information on earthquake fault processes. These data sources are integrated into QuakeSim's QuakeTables database system, and are accessible by users or various model applications. UAVSAR repeat pass interferometry data products are added to the QuakeTables database, and are available through a browseable map interface or Representational State Transfer (REST) interfaces. Model applications can retrieve data from Quake Tables, or from third-party GPS velocity data services; alternatively, users can manually input parameters into the models. Pattern analysis of GPS and seismicity data

Deuterium Depth Profile in Neutron-Irradiated Tungsten Exposed to Plasma

International Nuclear Information System (INIS)

Shimada, Masashi; Cao, G.; Hatano, Y.; Oda, T.; Oya, Y.; Hara, M.; Calderoni, P.

2011-01-01

The effect of radiation damage has been mainly simulated using high-energy ion bombardment. The ions, however, are limited in range to only a few microns into the surface. Hence, some uncertainty remains about the increase of trapping at radiation damage produced by 14 MeV fusion neutrons, which penetrate much farther into the bulk material. With the Japan-US joint research project: Tritium, Irradiations, and Thermofluids for America and Nippon (TITAN), the tungsten samples (99.99 % pure from A.L.M.T., 6mm in diameter, 0.2mm in thickness) were irradiated to high flux neutrons at 50 C and to 0.025 dpa in the High Flux Isotope Reactor (HFIR) at the Oak Ridge National Laboratory (ORNL). Subsequently, the neutron-irradiated tungsten samples were exposed to a high-flux deuterium plasma (ion flux: 1021-1022 m-2s-1, ion fluence: 1025-1026 m-2) in the Tritium Plasma Experiment (TPE) at the Idaho National Laboratory (INL). First results of deuterium retention in neutron-irradiated tungsten exposed in TPE have been reported previously. This paper presents the latest results in our on-going work of deuterium depth profiling in neutron-irradiated tungsten via nuclear reaction analysis. The experimental data is compared with the result from non neutron-irradiated tungsten, and is analyzed with the Tritium Migration Analysis Program (TMAP) to elucidate the hydrogen isotope behavior such as retention and depth distribution in neutron-irradiated and non neutron-irradiated tungsten.

Possibilities of LA-ICP-MS technique for the spatial elemental analysis of the recent fish scales: Line scan vs. depth profiling

International Nuclear Information System (INIS)

Hola, Marketa; Kalvoda, Jiri; Novakova, Hana; Skoda, Radek; Kanicky, Viktor

2011-01-01

LA-ICP-MS and solution based ICP-MS in combination with electron microprobe are presented as a method for the determination of the elemental spatial distribution in fish scales which represent an example of a heterogeneous layered bone structure. Two different LA-ICP-MS techniques were tested on recent common carp (Cyprinus carpio) scales: (a)A line scan through the whole fish scale perpendicular to the growth rings. The ablation crater of 55 μm width and 50 μm depth allowed analysis of the elemental distribution in the external layer. Suitable ablation conditions providing a deeper ablation crater gave average values from the external HAP layer and the collagen basal plate. (b)Depth profiling using spot analysis was tested in fish scales for the first time. Spot analysis allows information to be obtained about the depth profile of the elements at the selected position on the sample. The combination of all mentioned laser ablation techniques provides complete information about the elemental distribution in the fish scale samples. The results were compared with the solution based ICP-MS and EMP analyses. The fact that the results of depth profiling are in a good agreement both with EMP and PIXE results and, with the assumed ways of incorporation of the studied elements in the HAP structure, suggests a very good potential for this method.

Possibilities of LA-ICP-MS technique for the spatial elemental analysis of the recent fish scales: Line scan vs. depth profiling

Energy Technology Data Exchange (ETDEWEB)

Hola, Marketa [Department of Chemistry, Masaryk University of Brno, Kamenice 5, 625 00 Brno (Czech Republic); Kalvoda, Jiri, E-mail: jkalvoda@centrum.cz [Department of Geological Sciences, Masaryk University of Brno, Kotlarska 2, 611 37 Brno (Czech Republic); Novakova, Hana [Department of Chemistry, Masaryk University of Brno, Kamenice 5, 625 00 Brno (Czech Republic); Skoda, Radek [Department of Geological Sciences, Masaryk University of Brno, Kotlarska 2, 611 37 Brno (Czech Republic); Kanicky, Viktor [Department of Chemistry, Masaryk University of Brno, Kamenice 5, 625 00 Brno (Czech Republic)

2011-01-01

LA-ICP-MS and solution based ICP-MS in combination with electron microprobe are presented as a method for the determination of the elemental spatial distribution in fish scales which represent an example of a heterogeneous layered bone structure. Two different LA-ICP-MS techniques were tested on recent common carp (Cyprinus carpio) scales: (a)A line scan through the whole fish scale perpendicular to the growth rings. The ablation crater of 55 {mu}m width and 50 {mu}m depth allowed analysis of the elemental distribution in the external layer. Suitable ablation conditions providing a deeper ablation crater gave average values from the external HAP layer and the collagen basal plate. (b)Depth profiling using spot analysis was tested in fish scales for the first time. Spot analysis allows information to be obtained about the depth profile of the elements at the selected position on the sample. The combination of all mentioned laser ablation techniques provides complete information about the elemental distribution in the fish scale samples. The results were compared with the solution based ICP-MS and EMP analyses. The fact that the results of depth profiling are in a good agreement both with EMP and PIXE results and, with the assumed ways of incorporation of the studied elements in the HAP structure, suggests a very good potential for this method.

OpenSimRoot: widening the scope and application of root architectural models.

Science.gov (United States)

Postma, Johannes A; Kuppe, Christian; Owen, Markus R; Mellor, Nathan; Griffiths, Marcus; Bennett, Malcolm J; Lynch, Jonathan P; Watt, Michelle

2017-08-01

OpenSimRoot is an open-source, functional-structural plant model and mathematical description of root growth and function. We describe OpenSimRoot and its functionality to broaden the benefits of root modeling to the plant science community. OpenSimRoot is an extended version of SimRoot, established to simulate root system architecture, nutrient acquisition and plant growth. OpenSimRoot has a plugin, modular infrastructure, coupling single plant and crop stands to soil nutrient and water transport models. It estimates the value of root traits for water and nutrient acquisition in environments and plant species. The flexible OpenSimRoot design allows upscaling from root anatomy to plant community to estimate the following: resource costs of developmental and anatomical traits; trait synergisms; and (interspecies) root competition. OpenSimRoot can model three-dimensional images from magnetic resonance imaging (MRI) and X-ray computed tomography (CT) of roots in soil. New modules include: soil water-dependent water uptake and xylem flow; tiller formation; evapotranspiration; simultaneous simulation of mobile solutes; mesh refinement; and root growth plasticity. OpenSimRoot integrates plant phenotypic data with environmental metadata to support experimental designs and to gain a mechanistic understanding at system scales. © 2017 The Authors. New Phytologist © 2017 New Phytologist Trust.

SimDialog: A visual game dialog editor

OpenAIRE

Owen, C.; Biocca, F.; Bohil, C.; Conley, J.

2008-01-01

SimDialog is a visual editor for dialog in computer games. This paper presents the design of SimDialog, illustrating how script writers and non-programmers can easily create dialog for video games with complex branching structures and dynamic response characteristics. The system creates dialog as a directed graph. This allows for play using the dialog with a state-based cause and effect system that controls selection of non-player character responses and can provide a basic scoring mechanism ...

Getting Started with CoaSim — An Introduction to the Simulator CoaSim

DEFF Research Database (Denmark)

Mailund, T

2005-01-01

CoaSim is a tool for simulating the coalescent process with recombination and geneconversion, under either constant population size or exponential population growth. It effectively constructs the ancestral recombination graph for a given number of chromosomes and uses this to simulate samples...

Depth profiling of Al{sub 2}O{sub 3} + TiO{sub 2} nanolaminates by means of a time-of-flight energy spectrometer

Energy Technology Data Exchange (ETDEWEB)

Laitinen, M., E-mail: mikko.i.laitinen@jyu.fi [Dept. of Physics, P.O. Box 35, 40014 University of Jyvaeskylae (Finland); Sajavaara, T., E-mail: timo.sajavaara@jyu.fi [Dept. of Physics, P.O. Box 35, 40014 University of Jyvaeskylae (Finland); Rossi, M., E-mail: mikko.rossi@jyu.fi [Dept. of Physics, P.O. Box 35, 40014 University of Jyvaeskylae (Finland); Julin, J., E-mail: jaakko.julin@jyu.fi [Dept. of Physics, P.O. Box 35, 40014 University of Jyvaeskylae (Finland); Puurunen, R.L., E-mail: riikka.puurunen@vtt.fi [VTT Technical Research Centre of Finland, Tietotie 3, FI-02150 Espoo (Finland); Suni, T., E-mail: tommi.suni@vtt.fi [VTT Technical Research Centre of Finland, Tietotie 3, FI-02150 Espoo (Finland); Institute of Industrial Science, University of Tokyo, ew304, 4-6-1 Komaba, Meguro-ku, 153-8505 Tokyo (Japan); Ishida, T., E-mail: tadashii@iis.u-tokyo.ac.jp [Institute of Industrial Science, University of Tokyo, ew304, 4-6-1 Komaba, Meguro-ku, 153-8505 Tokyo (Japan); Fujita, H., E-mail: fujita@iis.u-tokyo.ac.jp [Institute of Industrial Science, University of Tokyo, ew304, 4-6-1 Komaba, Meguro-ku, 153-8505 Tokyo (Japan); Arstila, K., E-mail: kai.arstila@imec.be [Imec, Kapeldreef 75, Leuven 3001 (Belgium); Brijs, B., E-mail: bert.brijs@imec.be [Imec, Kapeldreef 75, Leuven 3001 (Belgium); Whitlow, H.J., E-mail: harry.j.whitlow@jyu.fi [Dept. of Physics, P.O. Box 35, 40014 University of Jyvaeskylae (Finland)

2011-12-15

Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al{sub 2}O{sub 3} + TiO{sub 2} nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyvaeskylae. In TOF-E measurements {sup 63}Cu, {sup 35}Cl, {sup 12}C and {sup 4}He ions with energies ranging from 0.5 to 10 MeV, were used and depth profiles of the whole nanolaminate film could be analyzed down to 5 nm individual layer thickness.

Investigation of the compositional depth profile in epitaxial submicrometer layers of AIIIBV heterostructures

International Nuclear Information System (INIS)

Baumbach, T.; Bruehl, H.G.; Rhan, H.; Pietsch, U.

1988-01-01

The compositional depth profile in semiconductor heterostructures can be determined from X-ray diffraction patterns. Different grading profiles were studied through theoretical simulations with regard to their features in the rocking curve. It was found that the thickness and the grading of a particular layer cannot be determined independently of each other. A linear grading gives rise to an increased peak width of the layer diffraction peak whereas an exponential grading can be detected from the damping of high-order interference fringes. The exponential model can be applied to determine the abruptness of the heterointerfaces. The proposed evaluation method of experimental rocking curves includes the case of overlapping peaks of the layer and the substrate diffraction. The simulation results are discussed for a GaAs/Ga 1-x Al x As/GaAs[100] double heterostructure. When the experimental resolution is taken into account, the sensitivity of the interface width determination was 100-200 A. (orig.)

The smallest Gliders in the Ocean- Temperature Recordings from Pteropods using SIMS

Science.gov (United States)

Keul, N.; Orland, I. J.; Valley, J. W.; Kozdon, R.; deMenocal, P. B.

2016-02-01

During the last few decades, the development, refinement and application of geochemical methods have lead to the establishment of new proxies to estimate global change. The oxygen isotope composition of carbonate shells formed by marine organisms is a widely used proxy for past ocean temperatures. Secondary ion mass spectrometry (SIMS) is a high spatial-resolution in situ technique, allowing oxygen isotope measurements on very small samples (down to 3 μm spot size). Pteropods are pelagic mollusks, producing shells made out of aragonite, which is more soluble than calcite in seawater, making them one of the first responders to climate change. They calcify closely at the aragonite- seawater equilibrium and are therefor ideal candidates to reconstruct temperatures based on their d18O. The oxygen isotopic composition of pteropod shells from sediment traps, net tows and a culture study from the Fram Strait will be presented. Specimens travelled in the Westspitsbergen Current prior to sinking into the sediment. During this transport specimens continue to grow, sequentially adding aragonite to the shell. We show that when using traditional (whole shell) δ18O measurements, the isotopic signatures of whole shells reflect the latitudinal gradient. Combining this with SIMS-derived δ18O measurements on individual shell parts, however, reveals that this is only half the story: Comparing δ18O of earlier (produced further South) and later shell parts (produced further North) shows that pteropods calcify in sequentially shallower water depths, overriding the latitudinal South to North temperature gradient. Combining traditional and novel δ18O measurements can potentially not only allow the reconstruction of temperature/ global warming, but also to assess ecological key parameters, such as habitat depth, at the same time.

ToF-SIMS measurements with topographic information in combined images.

Science.gov (United States)

Koch, Sabrina; Ziegler, Georg; Hutter, Herbert

2013-09-01

In 2D and 3D time-of-flight secondary ion mass spectrometric (ToF-SIMS) analysis, accentuated structures on the sample surface induce distorted element distributions in the measurement. The origin of this effect is the 45° incidence angle of the analysis beam, recording planar images with distortion of the sample surface. For the generation of correct element distributions, these artifacts associated with the sample surface need to be eliminated by measuring the sample surface topography and applying suitable algorithms. For this purpose, the next generation of ToF-SIMS instruments will feature a scanning probe microscope directly implemented in the sample chamber which allows the performance of topography measurements in situ. This work presents the combination of 2D and 3D ToF-SIMS analysis with topographic measurements by ex situ techniques such as atomic force microscopy (AFM), confocal microscopy (CM), and digital holographic microscopy (DHM). The concept of the combination of topographic and ToF-SIMS measurements in a single representation was applied to organic and inorganic samples featuring surface structures in the nanometer and micrometer ranges. The correct representation of planar and distorted ToF-SIMS images was achieved by the combination of topographic data with images of 2D as well as 3D ToF-SIMS measurements, using either AFM, CM, or DHM for the recording of topographic data.

National Coral Reef Monitoring Program: Shallow Water Conductivity-Temperature-Depth (CTD) Profiles for selected locations across American Samoa in 2015

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — Near-shore shallow water Conductivity-Temperature-Depth (CTD) surveys provided vertical profiles of temperature, salinity, and turbidity providing indications for...

Functionality of novel black silicon based nanostructured surfaces studied by TOF SIMS

DEFF Research Database (Denmark)

Talian, Ivan; Aranyosiova, M.; Orinak, A.

2010-01-01

A functionality of the novel black silicon based nanostructured surfaces (BS 2) with different metal surface modifications was tested by time-of-flight secondary ion mass spectrometry (TOF SIMS). Mainly two surface functions were studied: analytical signal enhancement and analyte pre-ionization e......A functionality of the novel black silicon based nanostructured surfaces (BS 2) with different metal surface modifications was tested by time-of-flight secondary ion mass spectrometry (TOF SIMS). Mainly two surface functions were studied: analytical signal enhancement and analyte pre......-ionization effect in SIMS due to nanostructure type and the assistance of the noble metal surface coating (Ag or Au) for secondary ion formation. As a testing analyte a Rhodamine 6G was applied. Bi+ has been used as SIMS primary ions. It was found out that SIMS signal enhancement of the analyte significantly...... depends on Ag layer thickness and measured ion mode (negative, positive). The best SIMS signal enhancement was obtained at BS2 surface coated with 400 nm of Ag layer. SIMS fragmentation schemes were developed for a model analyte deposited onto a silver and gold surface. Significant differences in pre...

Development practices and lessons learned in developing SimPEG

Science.gov (United States)

Cockett, R.; Heagy, L. J.; Kang, S.; Rosenkjaer, G. K.

2015-12-01

Inverse modelling provides a mathematical framework for constructing a model of physical property distributions in the subsurface that are consistent with the data collected in geophysical surveys. The geosciences are increasingly moving towards the integration of geological, geophysical, and hydrological information to better characterize the subsurface. This integration must span disciplines and is not only challenging scientifically, but additionally the inconsistencies between conventions often makes implementations complicated, non­ reproducible, or inefficient. SimPEG is an open-source, multi-university effort aimed at providing a generalized framework for solving forward and inverse problems. SimPEG includes finite volume discretizations on structured and unstructured meshes, interfaces to standard numerical solver packages, convex optimization algorithms, model parameterizations, and visualization routines. The SimPEG package (http://simpeg.xyz) supports an ecosystem of forward and inverse modelling applications, including electromagnetics, vadose zone flow, seismic, and potential­ fields, that are all written with a common interface and toolbox. The goal of SimPEG is to support a community of researchers with well-tested, extensible tools, and encourage transparency and reproducibility both of the SimPEG software and the geoscientific research it is applied to. In this presentation, we will share some of the lessons we have learned in designing the modular infrastructure, testing and development practices of SimPEG. We will discuss our use of version control, extensive unit-testing, continuous integration, documentation, issue tracking, and resources that facilitate communication between existing team members and allows new researchers to get involved. These practices have enabled the use of SimPEG in research, industry, and education as well as the ability to support a growing number of dependent repositories and applications. We hope that sharing our

Stable carbon isotope depth profiles and soil organic carbon dynamics in the lower Mississippi Basin

Science.gov (United States)

Wynn, J.G.; Harden, J.W.; Fries, T.L.

2006-01-01

Analysis of depth trends of 13C abundance in soil organic matter and of 13C abundance from soil-respired CO2 provides useful indications of the dynamics of the terrestrial carbon cycle and of paleoecological change. We measured depth trends of 13C abundance from cropland and control pairs of soils in the lower Mississippi Basin, as well as the 13C abundance of soil-respired CO2 produced during approximately 1-year soil incubation, to determine the role of several candidate processes on the 13C depth profile of soil organic matter. Depth profiles of 13C from uncultivated control soils show a strong relationship between the natural logarithm of soil organic carbon concentration and its isotopic composition, consistent with a model Rayleigh distillation of 13C in decomposing soil due to kinetic fractionation during decomposition. Laboratory incubations showed that initially respired CO 2 had a relatively constant 13C content, despite large differences in the 13C content of bulk soil organic matter. Initially respired CO2 was consistently 13C-depleted with respect to bulk soil and became increasingly 13C-depleted during 1-year, consistent with the hypothesis of accumulation of 13C in the products of microbial decomposition, but showing increasing decomposition of 13C-depleted stable organic components during decomposition without input of fresh biomass. We use the difference between 13C / 12C ratios (calculated as ??-values) between respired CO 2 and bulk soil organic carbon as an index of the degree of decomposition of soil, showing trends which are consistent with trends of 14C activity, and with results of a two-pooled kinetic decomposition rate model describing CO2 production data recorded during 1 year of incubation. We also observed inconsistencies with the Rayleigh distillation model in paired cropland soils and reasons for these inconsistencies are discussed. ?? 2005 Elsevier B.V. All rights reserved.

A Virtual Research Environment for a Secondary Ion Mass Spectrometer (SIMS)

Science.gov (United States)

Wiedenbeck, M.; Schäfer, L.; Klump, J.; Galkin, A.

2013-12-01

Overview: This poster describes the development of a Virtual Research Environment for the Secondary Ion Mass Spectrometer (SIMS) at GFZ Potsdam. Background: Secondary Ion Mass Spectrometers (SIMS) are extremely sensitive instruments for analyzing the surfaces of solid and thin film samples. These instruments are rare, expensive and experienced operators are very highly sought after. As such, measurement time is a precious commodity, until now only accessible to small numbers of researchers. The challenge: The Virtual SIMS Project aims to set up a Virtual Research Environment for the operation of the CAMECA IMS 1280-HR instrument at the GFZ Potsdam. The objective of the VRE is to provide SIMS access not only to researchers locally present in Potsdam but also to scientists working with SIMS cooperation partners in e.g., South Africa, Brazil or India. The requirements: The system should address the complete spectrum of laboratory procedures - from online application for measurement time, to remote access for data acquisition to data archiving for the subsequent publication and for future reuse. The approach: The targeted Virtual SIMS Environment will consist of a: 1. Web Server running the Virtual SIMS website providing general information about the project, lab access proposal forms and calendar for the timing of project related tasks. 2. LIMS Server, responsible for scheduling procedures, data management and, if applicable, accounting and billing. 3. Remote SIMS Tool, devoted to the operation of the experiment within a remote control environment. 4. Publishing System, which supports the publication of results in cooperation with the GFZ Library services. 5. Training Simulator, which offers the opportunity to rehearse experiments and to prepare for possible events such as a power outages or interruptions to broadband services. First results: The SIMS Virtual Research Environment will be mainly based on open source software, the only exception being the CAMECA IMS

An unsupervised MVA method to compare specific regions in human breast tumor tissue samples using ToF-SIMS.

Science.gov (United States)

Bluestein, Blake M; Morrish, Fionnuala; Graham, Daniel J; Guenthoer, Jamie; Hockenbery, David; Porter, Peggy L; Gamble, Lara J

2016-03-21

Imaging time-of-flight secondary ion mass spectrometry (ToF-SIMS) and principal component analysis (PCA) were used to investigate two sets of pre- and post-chemotherapy human breast tumor tissue sections to characterize lipids associated with tumor metabolic flexibility and response to treatment. The micron spatial resolution imaging capability of ToF-SIMS provides a powerful approach to attain spatially-resolved molecular and cellular data from cancerous tissues not available with conventional imaging techniques. Three ca. 1 mm(2) areas per tissue section were analyzed by stitching together 200 μm × 200 μm raster area scans. A method to isolate and analyze specific tissue regions of interest by utilizing PCA of ToF-SIMS images is presented, which allowed separation of cellularized areas from stromal areas. These PCA-generated regions of interest were then used as masks to reconstruct representative spectra from specifically stromal or cellular regions. The advantage of this unsupervised selection method is a reduction in scatter in the spectral PCA results when compared to analyzing all tissue areas or analyzing areas highlighted by a pathologist. Utilizing this method, stromal and cellular regions of breast tissue biopsies taken pre- versus post-chemotherapy demonstrate chemical separation using negatively-charged ion species. In this sample set, the cellular regions were predominantly all cancer cells. Fatty acids (i.e. palmitic, oleic, and stearic), monoacylglycerols, diacylglycerols and vitamin E profiles were distinctively different between the pre- and post-therapy tissues. These results validate a new unsupervised method to isolate and interpret biochemically distinct regions in cancer tissues using imaging ToF-SIMS data. In addition, the method developed here can provide a framework to compare a variety of tissue samples using imaging ToF-SIMS, especially where there is section-to-section variability that makes it difficult to use a serial hematoxylin

Electron beam and optical depth profiling of quasibulk GaN

International Nuclear Information System (INIS)

Chernyak, L.; Osinsky, A.; Nootz, G.; Schulte, A.; Jasinski, J.; Benamara, M.; Liliental-Weber, Z.; Look, D. C.; Molnar, R. J.

2000-01-01

Electron beam and optical depth profiling of thick (5.5--64 μm) quasibulk n-type GaN samples, grown by hydride vapor-phase epitaxy, were carried out using electron beam induced current (EBIC), microphotoluminescence (PL), and transmission electron microscopy (TEM). The minority carrier diffusion length, L, was found to increase linearly from 0.25 μm, at a distance of about 5 μm from the GaN/sapphire interface, to 0.63 μm at the GaN surface, for a 36-μm-thick sample. The increase in L was accompanied by a corresponding increase in PL band-to-band radiative transition intensity as a function of distance from the GaN/sapphire interface. We attribute the latter changes in PL intensity and minority carrier diffusion length to a reduced carrier mobility and lifetime at the interface, due to scattering at threading dislocations. The results of EBIC and PL measurements are in good agreement with the values for dislocation density obtained using TEM

Rapid characterisation of surface modifications and treatments using a benchtop SIMS instrument

Science.gov (United States)

McPhail, D. S.; Sokhan, M.; Rees, E. E.; Cliff, B.; Eccles, A. J.; Chater, R. J.

2004-06-01

The development of a novel benchtop SIMS instrument (Millbrook MiniSIMS) [Appl. Surf. Sci. 144 (1999) 106] has brought routine SIMS analysis to many new users, for example museum conservators. This is a result of the simple operation and the relatively low capital cost of the instrument. We report here on the continued development of the system in terms of increasing performance and functionality and its use in museum conservation based applications where a mobile instrument for high throughput, rapid SIMS analysis has proven to be of great benefit to the user. The example we describe here is the application of the MiniSIMS to the analysis of silver thread woven into a silk dress before and after laser cleaning.

NanoSIMS results from olivine-hosted melt embayments: Magma ascent rate during explosive basaltic eruptions

Science.gov (United States)

Lloyd, Alexander S.; Ruprecht, Philipp; Hauri, Erik H.; Rose, William; Gonnermann, Helge M.; Plank, Terry

2014-08-01

The explosivity of volcanic eruptions is governed in part by the rate at which magma ascends and degasses. Because the time scales of eruptive processes can be exceptionally fast relative to standard geochronometers, magma ascent rate remains difficult to quantify. Here we use as a chronometer concentration gradients of volatile species along open melt embayments within olivine crystals. Continuous degassing of the external melt during magma ascent results in diffusion of volatile species from embayment interiors to the bubble located at their outlets. The novel aspect of this study is the measurement of concentration gradients in five volatile elements (CO2, H2O, S, Cl, F) at fine-scale (5-10 μm) using the NanoSIMS. The wide range in diffusivity and solubility of these different volatiles provides multiple constraints on ascent timescales over a range of depths. We focus on four 100-200 μm, olivine-hosted embayments erupted on October 17, 1974 during the sub-Plinian eruption of Volcán de Fuego. H2O, CO2, and S all decrease toward the embayment outlet bubble, while F and Cl increase or remain roughly constant. Compared to an extensive melt inclusion suite from the same day of the eruption, the embayments have lost both H2O and CO2 throughout the entire length of the embayment. We fit the profiles with a 1-D numerical diffusion model that allows varying diffusivities and external melt concentrations as a function of pressure. Assuming a constant decompression rate from the magma storage region at approximately 220 MPa to the surface, H2O, CO2 and S profiles for all embayments can be fit with a relatively narrow range in decompression rates of 0.3-0.5 MPa/s, equivalent to 11-17 m/s ascent velocity and an 8 to 12 minute duration of magma ascent from ~ 10 km depth. A two stage decompression model takes advantage of the different depth ranges over which CO2 and H2O degas, and produces good fits given an initial stage of slow decompression (0.05-0.3 MPa/s) at high

Scanner image methodology (SIM) to measure dimensions of leaves ...

African Journals Online (AJOL)

A scanner image methodology was used to determine plant dimensions, such as leaf area, length and width. The values obtained using SIM were compared with those recorded by the LI-COR leaf area meter. Bias, linearity, reproducibility and repeatability (R&R) were evaluated for SIM. Different groups of leaves were ...

Depth profiling Li in electrode materials of lithium ion battery by {sup 7}Li(p,γ){sup 8}Be and {sup 7}Li(p,α){sup 4}He nuclear reactions

Energy Technology Data Exchange (ETDEWEB)

Sunitha, Y., E-mail: sunibarc@gmail.com; Kumar, Sanjiv

2017-06-01

A proton induced γ-ray emission method based on {sup 7}Li(p,γ){sup 8}Be proton capture reaction and a nuclear reaction analysis method involving {sup 7}Li(p,α){sup 4}He reaction are described for depth profiling Li in the electrode materials, graphite and lithium cobalt oxide for example, of a Li-ion battery. Depth profiling by {sup 7}Li(p,γ){sup 8}Be reaction is accomplished by the resonance at 441 keV and involves the measurement of 14.6 and 17.6 MeV γ-rays, characteristic of the reaction, by a NaI(Tl) detector. The method has a detection sensitivity of ∼0.2 at% and enables profiling up to a depth ≥20 µm with a resolution of ≥150 nm. The profiling to a fairly large depth is facilitated by the absence of any other resonance up to 1800 keV proton energy. The reaction has substantial off-resonance cross-sections. A procedure is outlined for evaluating the off-resonance yields. Interferences from fluorine and aluminium are major limitation of this depth profiling methodology. The depth profile measurement by {sup 7}Li(p,α){sup 4}He reaction, on the other hand, utilises 2–3 MeV protons and entails the detection of α-particles at 90° or 150° angles. The reaction exhibits inverse kinematics at 150°. This method, too, suffers interference from fluorine due to the simultaneous occurrence of {sup 19}F(p,α){sup 16}O reaction. Kinematical considerations show that the interference is minimal at 90° and thus is the recommended angle of detection. The method is endowed with a detection sensitivity of ∼0.1 at%, a depth resolution of ∼100 nm and a probing depth of about 30 µm in the absence and 5–8 µm in the presence of fluorine in the material. Both methods yielded comparable depth profiles of Li in the cathode (lithium cobalt oxide) and the anode (graphite) of a Li-ion battery.

Study of temperature and radiation induced microstructural changes in Xe-implanted UO2 by TEM, STEM, SIMS and positron spectroscopy

International Nuclear Information System (INIS)

Djourelov, Nikolay; Marchand, Benoît; Marinov, Hristo; Moncoffre, Nathalie; Pipon, Yves; Bérerd, Nicolas; Nédélec, Patrick; Raimbault, Louis; Epicier, Thierry

2013-01-01

Doppler broadening of annihilation gamma-line combined with a slow positron beam (SPB) was used to measure the momentum density distribution of annihilating pairs in a set of sintered UO 2 samples implantated with 800-keV 136 Xe 2+ at fluences of 1 × 10 15 and 1 × 10 16 Xe cm −2 . The effect of prolonged post-implantation annealing at 1673 and 1873 K, grain size, and 152-MeV Iodine irradiation were studied by analysis of S(E) profiles and S-W maps and discussed versus secondary ion mass spectroscopy (SIMS), scanning transmission electron microscopy results. Spectroscopy with SPB and SIMS is an excellent combination of complementary techniques for studying the formation and evolution of Xe-bubbles, and Xe retention

Condition and biochemical profile of blue mussels (Mytilus edulis L.) cultured at different depths in a cold water coastal environment

Science.gov (United States)

Gallardi, Daria; Mills, Terry; Donnet, Sebastien; Parrish, Christopher C.; Murray, Harry M.

2017-08-01

The growth and health of cultured blue mussels (Mytilus edulis) are affected by environmental conditions. Typically, culture sites are situated in sheltered areas near shore (i.e., 20 m depth) mussel culture has been growing. This study evaluated the effect of culture depth on blue mussels in a cold water coastal environment (Newfoundland, Canada). Culture depth was examined over two years from September 2012 to September 2014; mussels from three shallow water (5 m) and three deep water (15 m) sites were compared for growth and biochemical composition; culture depths were compared for temperature and chlorophyll a. Differences between the two years examined were noted, possibly due to harsh winter conditions in the second year of the experiment. In both years shallow and deep water mussels presented similar condition; in year 2 deep water mussels had a significantly better biochemical profile. Lipid and glycogen analyses showed seasonal variations, but no significant differences between shallow and deep water were noted. Fatty acid profiles showed a significantly higher content of omega-3 s (20:5ω3; EPA) and lower content of bacterial fatty acids in deep water sites in year 2. Everything considered, deep water appeared to provide a more favorable environment for mussel growth than shallow water under harsher weather conditions.

Accurate stopping power determination of 15N ions for hydrogen depth profiling by a combination of ion beams and synchrotron radiation

Science.gov (United States)

Zier, M.; Reinholz, U.; Riesemeier, H.; Radtke, M.; Munnik, F.

2012-02-01

Hydrogen analysis is of particular importance in thin film technology and it is often necessary to obtain a depth profile. The method with the best depth resolution is NRA using the 6385 keV resonance of the 1H( 15N,αγ) 12C nuclear reaction. The correct quantification of the depth and concentration scales in the measured hydrogen profiles relies on accurate stopping power values. We present a method to deduce these values from a combination of two techniques: NRA and X-ray reflectometry (XRR). This method is applied to the determination of the stopping power of ˜6.4 MeV 15N ions in H-containing amorphous Si-layers (a-Si:H). Density-independent stopping powers at different H concentrations are determined by combining the results from NRA and XRR with an overall uncertainty of 3.3%, showing good agreement with SRIM values. This work shows exemplary the methodology for future evaluation of stopping powers for quality assurance in NRA.

Sub-nanometer resolution XPS depth profiling: Sensing of atoms

Energy Technology Data Exchange (ETDEWEB)

Szklarczyk, Marek, E-mail: szklarcz@chem.uw.edu.pl [Faculty of Chemistry, University of Warsaw, ul. Pasteura 1, 02-093 Warsaw (Poland); Shim-Pol, ul. Lubomirskiego 5, 05-080 Izabelin (Poland); Macak, Karol; Roberts, Adam J. [Kratos Analytical Ltd, Wharfside, Trafford Wharf Road, Manchester, M17 1GP (United Kingdom); Takahashi, Kazuhiro [Kratos XPS Section, Shimadzu Corp., 380-1 Horiyamashita, Hadano, Kanagawa 259-1304 (Japan); Hutton, Simon [Kratos Analytical Ltd, Wharfside, Trafford Wharf Road, Manchester, M17 1GP (United Kingdom); Głaszczka, Rafał [Shim-Pol, ul. Lubomirskiego 5, 05-080 Izabelin (Poland); Blomfield, Christopher [Kratos Analytical Ltd, Wharfside, Trafford Wharf Road, Manchester, M17 1GP (United Kingdom)

2017-07-31

Highlights: • Angle resolved photoelectron depth profiling of nano thin films. • Sensing atomic position in SAM films. • Detection of direction position of adsorbed molecules. - Abstract: The development of a method capable of distinguishing a single atom in a single molecule is important in many fields. The results reported herein demonstrate sub-nanometer resolution for angularly resolved X-ray photoelectron spectroscopy (ARXPS). This is made possible by the incorporation of a Maximum Entropy Method (MEM) model, which utilize density corrected electronic emission factors to the X-ray photoelectron spectroscopy (XPS) experimental results. In this paper we report on the comparison between experimental ARXPS results and reconstructed for both inorganic and organic thin film samples. Unexpected deviations between experimental data and calculated points are explained by the inaccuracy of the constants and standards used for the calculation, e.g. emission factors, scattering intensity and atomic density through the studied thickness. The positions of iron, nitrogen and fluorine atoms were determined in the molecules of the studied self-assembled monolayers. It has been shown that reconstruction of real spectroscopic data with 0.2 nm resolution is possible.

Non-destructive microstructural analysis with depth resolution

Energy Technology Data Exchange (ETDEWEB)

Zolotoyabko, E. E-mail: zloto@tx.technion.ac.il; Quintana, J.P

2003-01-01

A depth-sensitive X-ray diffraction technique has been developed with the aim of studying microstructural modifications in inhomogeneous polycrystalline materials. In that method, diffraction profiles are measured at different X-ray energies varied by small steps. X-rays at higher energies probe deeper layers of material. Depth-resolved structural information is retrieved by comparing energy-dependent diffraction profiles. The method provides non-destructive depth profiling of the preferred orientation, grain size, microstrain fluctuations and residual strains. This technique is applied to the characterization of seashells. Similarly, energy-variable X-ray diffraction can be used for the non-destructive characterization of different laminated structures and composite materials.

SIMS analysis of extended impact features on LDEF experiment

Science.gov (United States)

Amari, S.; Foote, J.; Jessberger, E. K.; Simon, C.; Stadermann, F. J.; Swan, P.; Walker, R.; Zinner, E.

1991-01-01

Discussed here are the first Secondary Ion Mass Spectroscopy (SIMS) analysis of projectile material deposited in extended impact features on Ge wafers from the trailing edge. Although most capture cells lost their plastic film covers, they contain extended impact features that apparently were produced by high velocity impacts when the plastic foils were still intact. Detailed optical scanning of all bare capture cells from the trailing edge revealed more than 100 impacts. Fifty-eight were selected by scanning electron microscope (SEM) inspection as prime candidates for SIMS analysis. Preliminary SIMS measurements were made on 15 impacts. More than half showed substantial enhancements of Mg, Al, Si, Ca, and Fe in the impact region, indicating micrometeorites as the projectiles.

Crystallization and preliminary X-ray analysis of the TetR-like efflux pump regulator SimR

International Nuclear Information System (INIS)

Le, Tung B. K.; Stevenson, Clare E. M.; Buttner, Mark J.; Lawson, David M.

2011-01-01

Crystals of SimR, a TetR-like efflux pump repressor from S. antibioticus, were obtained and X-ray data were recorded to a resolution of 2.3 Å. Crystals of SimR were grown by vapour diffusion. The protein crystallized with trigonal symmetry and X-ray data were recorded to a resolution of 2.3 Å from a single crystal at the synchrotron. SimR belongs to the TetR family of bacterial transcriptional regulators. In the absence of the antibiotic simocyclinone, SimR represses the transcription of a divergently transcribed gene encoding the simocyclinone efflux pump SimX in Streptomyces antibioticus by binding to operators in the simR–simX intergenic region. Simocyclinone binding causes SimR to dissociate from its operators, leading to expression of the SimX efflux pump. Thus, SimR represents an intimate link between the biosynthesis of simocyclinone and its export, which may also provide the mechanism of self-resistance to the antibiotic in the producer strain

Depth-Profiling Electronic and Structural Properties of Cu(In,Ga)(S,Se)2 Thin-Film Solar Cell.

Science.gov (United States)

Chiang, Ching-Yu; Hsiao, Sheng-Wei; Wu, Pin-Jiun; Yang, Chu-Shou; Chen, Chia-Hao; Chou, Wu-Ching

2016-09-14

Utilizing a scanning photoelectron microscope (SPEM) and grazing-incidence X-ray powder diffraction (GIXRD), we studied the electronic band structure and the crystalline properties of the pentanary Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film solar cell as a function of sample depth on measuring the thickness-gradient sample. A novel approach is proposed for studying the depth-dependent information on thin films, which can provide a gradient thickness and a wide cross-section of the sample by polishing process. The results exhibit that the CIGSSe absorber layer possesses four distinct stoichiometries. The growth mechanism of this distinctive compositional distribution formed by a two-stage process is described according to the thermodynamic reaction and the manufacturing process. On the basis of the depth-profiling results, the gradient profiles of the conduction and valence bands were constructed to elucidate the performance of the electrical properties (in this case, Voc = 620 mV, Jsc = 34.6 mA/cm(2), and η = 14.04%); the valence-band maxima (VBM) measured with a SPEM in the spectroscopic mode coincide with this band-structure model, except for a lowering of the VBM observed in the surface region of the absorber layer due to the ordered defect compound (ODC). In addition, the depth-dependent texturing X-ray diffraction pattern presents the crystalline quality and the residual stress for each depth of a thin-film device. We find that the randomly oriented grains in the bottom region of the absorber layer and the different residual stress between the underlying Mo and the absorber interface, which can deteriorate the electrical performance due to peeling-off effect. An anion interstitial defect can be observed on comparing the anion concentration of the elemental distribution with crystalline composition; a few excess sulfur atoms insert in interstitial sites at the front side of the absorber layer, whereas the interstitial selenium atoms insert at the back side.

National Coral Reef Monitoring Program: Shallow Water Conductivity-Temperature-Depth (CTD) Profiles for selected locations across the Mariana Archipelago in 2014

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — Near-shore shallow water Conductivity-Temperature-Depth (CTD) surveys provided vertical profiles of temperature, salinity, and turbidity providing indications for...

National Coral Reef Monitoring Program: Shallow Water Conductivity-Temperature-Depth (CTD) Profiles for selected locations across the Hawaiian Archipelago since 2013

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — Near-shore shallow water Conductivity-Temperature-Depth (CTD) surveys provided vertical profiles of temperature, salinity, and turbidity providing indications for...

Development of a TOF SIMS setup at the Zagreb heavy ion microbeam facility

Science.gov (United States)

Tadić, Tonči; Bogdanović Radović, Iva; Siketić, Zdravko; Cosic, Donny Domagoj; Skukan, Natko; Jakšić, Milko; Matsuo, Jiro

2014-08-01

We describe a new Time-of-flight Secondary Ion Mass Spectrometry (TOF SIMS) setup for MeV SIMS application, which is constructed and installed at the heavy ion microbeam facility at the Ruđer Bošković Institute in Zagreb. The TOF-SIMS setup is developed for high sensitivity molecular imaging using a heavy ion microbeam that focuses ion beams (from C to I) with sub-micron resolution. Dedicated pulse processing electronics for MeV SIMS application have been developed, enabling microbeam-scanning control, incoming ion microbeam pulsing and molecular mapping. The first results showing measured MeV SIMS spectra as well as molecular maps for samples of interest are presented and discussed.

Development of a TOF SIMS setup at the Zagreb heavy ion microbeam facility

International Nuclear Information System (INIS)

Tadić, Tonči; Bogdanović Radović, Iva; Siketić, Zdravko; Cosic, Donny Domagoj; Skukan, Natko; Jakšić, Milko; Matsuo, Jiro

2014-01-01

We describe a new Time-of-flight Secondary Ion Mass Spectrometry (TOF SIMS) setup for MeV SIMS application, which is constructed and installed at the heavy ion microbeam facility at the Ruđer Bošković Institute in Zagreb. The TOF-SIMS setup is developed for high sensitivity molecular imaging using a heavy ion microbeam that focuses ion beams (from C to I) with sub-micron resolution. Dedicated pulse processing electronics for MeV SIMS application have been developed, enabling microbeam-scanning control, incoming ion microbeam pulsing and molecular mapping. The first results showing measured MeV SIMS spectra as well as molecular maps for samples of interest are presented and discussed

Analysis of hydrogen isotopes in materials by secondary ion mass spectrometry and nuclear microanalysis

International Nuclear Information System (INIS)

Ross, G.G.

1994-01-01

Only two techniques are really appropriate for the depth profiling of hydrogen isotopes: nuclear microanalysis (NMA) and secondary ion mass spectrometry (SIMS). The intent of this paper is to give an up to date review of both techniques and to show how they can be used in conjunction. Both techniques (SIMS and NMA) will be described briefly. NMA will divided into two different categories: nuclear reaction analysis (NRA) and elastic recoil detection (ERD). Both techniques (SIMS and NMA) will be discussed in terms of sensitivity, resolution, probing depth, quantitative measurement, generality and selectivity, beam induced effects and surface roughness effects. The principal advantages and disadvantages of each of these techniques will be specified, supporting the contention that SIMS and NMA are complementary and should be used in conjunction. Finally, some examples of, and perspectives for, the complementary use of both techniques will be presented. (Author)

SORCE SIM Level 3 Solar Spectral Irradiance Daily Means V020

Data.gov (United States)

National Aeronautics and Space Administration — The SORCE SIM Solar Spectral Irradiance (SSI) data product SOR3SIMD is constructed using measurements from the SIM instruments, which are combined into merged daily...

SORCE SIM Level 3 Solar Spectral Irradiance Daily Means V022

Data.gov (United States)

National Aeronautics and Space Administration — The SORCE SIM Solar Spectral Irradiance (SSI) data product SOR3SIMD is constructed using measurements from the SIM instruments, which are combined into merged daily...

Systems Engineering and Application of System Performance Modeling in SIM Lite Mission

Science.gov (United States)

Moshir, Mehrdad; Murphy, David W.; Milman, Mark H.; Meier, David L.

2010-01-01

The SIM Lite Astrometric Observatory will be the first space-based Michelson interferometer operating in the visible wavelength, with the ability to perform ultra-high precision astrometric measurements on distant celestial objects. SIM Lite data will address in a fundamental way questions such as characterization of Earth-mass planets around nearby stars. To accomplish these goals it is necessary to rely on a model-based systems engineering approach - much more so than most other space missions. This paper will describe in further detail the components of this end-to-end performance model, called "SIM-sim", and show how it has helped the systems engineering process.

Sims, Christopher Albert (born 1942)

NARCIS (Netherlands)

Boumans, Marcel

2015-01-01

Christopher Sims is one of the leaders in time-series econometrics and empirical macroeconomics and is well known for introducing the VAR approach to econometrics and macroeconomic modelling. Sims’ main contribution to empirical macroeconomics was to show how macro-econometric modeling should be

Depth profiling of marker layers using x-ray waveguide structures

International Nuclear Information System (INIS)

Gupta, Ajay; Rajput, Parasmani; Saraiya, Amit; Reddy, V. R.; Gupta, Mukul; Bernstorff, Sigrid; Amenitsch, H.

2005-01-01

It is demonstrated that x-ray waveguide structures can be used for depth profiling of a marker layer inside the guiding layer with an accuracy of better than 0.2 nm. A combination of x-ray fluorescence and x-ray reflectivity measurements can provide detailed information about the structure of the guiding layer. The position and thickness of the marker layer affect different aspects of the angle-dependent x-ray fluorescence pattern, thus making it possible to determine the structure of the marker layer in an unambiguous manner. As an example, effects of swift heavy ion irradiation on a Si/M/Si trilayer (M=Fe, W), forming the cavity of the waveguide structure, have been studied. It is found that in accordance with the prediction of thermal spike model, Fe is much more sensitive to swift heavy ion induced modifications as compared to W, even in thin film form. However, a clear evidence of movement of the Fe marker layer towards the surface is observed after irradiation, which cannot be understood in terms of the thermal spike model alone

Depth profiling of marker layers using x-ray waveguide structures

Science.gov (United States)

Gupta, Ajay; Rajput, Parasmani; Saraiya, Amit; Reddy, V. R.; Gupta, Mukul; Bernstorff, Sigrid; Amenitsch, H.

2005-08-01

It is demonstrated that x-ray waveguide structures can be used for depth profiling of a marker layer inside the guiding layer with an accuracy of better than 0.2 nm. A combination of x-ray fluorescence and x-ray reflectivity measurements can provide detailed information about the structure of the guiding layer. The position and thickness of the marker layer affect different aspects of the angle-dependent x-ray fluorescence pattern, thus making it possible to determine the structure of the marker layer in an unambiguous manner. As an example, effects of swift heavy ion irradiation on a Si/M/Si trilayer ( M=Fe , W), forming the cavity of the waveguide structure, have been studied. It is found that in accordance with the prediction of thermal spike model, Fe is much more sensitive to swift heavy ion induced modifications as compared to W, even in thin film form. However, a clear evidence of movement of the Fe marker layer towards the surface is observed after irradiation, which cannot be understood in terms of the thermal spike model alone.

Depth profiling of inks in authentic and counterfeit banknotes by electrospray laser desorption ionization/mass spectrometry.

Science.gov (United States)

Kao, Yi-Ying; Cheng, Sy-Chyi; Cheng, Chu-Nian; Shiea, Jentaie

2016-01-01

Electrospray laser desorption ionization is an ambient ionization technique that generates neutrals via laser desorption and ionizes those neutrals in an electrospray plume and was utilized to characterize inks in different layers of copy paper and banknotes of various currencies. Depth profiling of inks was performed on overlapping color bands on copy paper by repeatedly scanning the line with a pulsed laser beam operated at a fixed energy. The molecules in the ink on a banknote were desorbed by irradiating the banknote surface with a laser beam operated at different energies, with results indicating that different ions were detected at different depths. The analysis of authentic $US100, $100 RMB and $1000 NTD banknotes indicated that ions detected in 'color-shifting' and 'typography' regions were significantly different. Additionally, the abundances of some ions dramatically changed with the depth of the aforementioned regions. This approach was used to distinguish authentic $1000 NTD banknotes from counterfeits. Copyright © 2015 John Wiley & Sons, Ltd. Copyright © 2015 John Wiley & Sons, Ltd.

Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

Science.gov (United States)

Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

1994-01-01

The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

Phase 1 Validation Testing and Simulation for the WEC-Sim Open Source Code

Science.gov (United States)

Ruehl, K.; Michelen, C.; Gunawan, B.; Bosma, B.; Simmons, A.; Lomonaco, P.

2015-12-01

WEC-Sim is an open source code to model wave energy converters performance in operational waves, developed by Sandia and NREL and funded by the US DOE. The code is a time-domain modeling tool developed in MATLAB/SIMULINK using the multibody dynamics solver SimMechanics, and solves the WEC's governing equations of motion using the Cummins time-domain impulse response formulation in 6 degrees of freedom. The WEC-Sim code has undergone verification through code-to-code comparisons; however validation of the code has been limited to publicly available experimental data sets. While these data sets provide preliminary code validation, the experimental tests were not explicitly designed for code validation, and as a result are limited in their ability to validate the full functionality of the WEC-Sim code. Therefore, dedicated physical model tests for WEC-Sim validation have been performed. This presentation provides an overview of the WEC-Sim validation experimental wave tank tests performed at the Oregon State University's Directional Wave Basin at Hinsdale Wave Research Laboratory. Phase 1 of experimental testing was focused on device characterization and completed in Fall 2015. Phase 2 is focused on WEC performance and scheduled for Winter 2015/2016. These experimental tests were designed explicitly to validate the performance of WEC-Sim code, and its new feature additions. Upon completion, the WEC-Sim validation data set will be made publicly available to the wave energy community. For the physical model test, a controllable model of a floating wave energy converter has been designed and constructed. The instrumentation includes state-of-the-art devices to measure pressure fields, motions in 6 DOF, multi-axial load cells, torque transducers, position transducers, and encoders. The model also incorporates a fully programmable Power-Take-Off system which can be used to generate or absorb wave energy. Numerical simulations of the experiments using WEC-Sim will be

Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si1−xCx:H Films

International Nuclear Information System (INIS)

Wei, Hua; Shu-De, Yao; Kun, Wang; Zhi-Bo, Ding

2008-01-01

Composition in amorphous Si 1−X C x :H heteroepitaxial thin films on Si (100) by plasma enhanced chemical vapour deposition (PECVD) is analysed. The unknown x (0.45–0.57) and the depth profile of hydrogen in the thin films are characterized by Rutherford backscattering spectrum (RBS), resonance-nuclear reaction analysis (R-NRA) and elastic recoil detection (ERD), respectively. In addition, the depth profile of hydrogen in the unannealed thin films is compared to that of the annealed thin films with rapid thermal annealing (RTA) or laser spike annealing (LSA) in nitrogen atmosphere. The results indicate that the stoichiometric amorphous SiC can be produced by PECVD when the ratio of CH 4 /SiH 4 is approximately equal to 25. The content of hydrogen decreases suddenly from 35% to 1% after 1150° C annealing. RTA can reduce hydrogen in SiC films effectively than LSA. (cross-disciplinary physics and related areas of science and technology)

SIMS prototype system 1 test results: Engineering analysis

Science.gov (United States)

1978-01-01

The space and domestic water solar heating system designated SIMS Prototype Systems 1 was evaluated. The test system used 720 ft (gross) of Solar Energy Products Air Collectors, a Solar Control Corporation SAM 20 Air Handler with Model 75-175 control unit, a Jackson Solar Storage tank with Rho Sigma Mod 106 controller, and 20 tons of rack storage. The test data analysis performed evaluates the system performance and documents the suitability of SIMS Prototype System 1 hardware for field installation.

The Pedagogical Benefits of "SimCity" in Urban Geography Education

Science.gov (United States)

Kim, Minsung; Shin, Jungyeop

2016-01-01

This article investigated the pedagogical potential of the "SimCity" simulation game in an urban geography course. University students used "SimCity" to build their own cities and applied a wide range of theories to support their urban structures. Moreover, the students critically evaluated the logic and functioning of the…

Profile in various organic soil depth shrimp pond, Tambak Inti Rakyat, Karawang

Directory of Open Access Journals (Sweden)

Yuni Puji Hastuti

2015-04-01

Full Text Available ABSTRACTOrganic material in the bottom of the pond is part of the land is a complex and dynamic system, which is sourced from the rest of the feed, plants, and or animals found in the soil that continuously change shape, because it is influenced by biology, physics, and chemistry. This study was aimed to see the profile of organic material consisting of C, N, and C/N ratio and phosphate in different depths of pond with different culture systems. Observation were conducted at Tambak Inti Rakyat, Karawang in traditional, semi-intensive and intensive culture systems. Observation at mangrove area was also observed as control. Sediment samples at the inlet and outlet at three different depths (0‒5 cm, 5‒10 cm, and 10‒15 cm was taken every 30 days to measure the content of C, N, C/N ratio, and total phosphate. During the 120 day maintenance period could be known that in all pond systems were used (traditional, semi-intensive, and intensive the concentration of C-organic and organic-N on average was located in the bottom layer which is a layer of 10‒15 cm. The lack of human intervention from ground pond system, the more diverse the type and amount of organic material contained therein.Keywords: organic materials, subgrade, depth, aquaculture systems, long maintenanceABSTRAKBahan organik di dasar tambak merupakan bagian dari tanah yang merupakan suatu sistem kompleks dan dinamis, yang bersumber dari sisa pakan, tanaman, dan atau binatang yang terdapat di dalam tanah yang terus menerus mengalami perubahan bentuk, karena dipengaruhi oleh faktor biologi, fisika, dan kimia. Penelitian ini bertujuan untuk melihat profil bahan organik yang terdiri dari C, N, dan C/N rasio serta fosfat pada kedalaman tambak yang berbeda dengan sistem budidaya yang berbeda pula. Pengamatan dilakukan di Tambak Inti Rakyat Karawang pada sistem budidaya tradisional, semi intensif, dan intensif. Pengamatan di daerah mangrove diamati pula sebagai kontrol. Sampel sedimen di

Teaching the Teacher: Tutoring SimStudent Leads to More Effective Cognitive Tutor Authoring

Science.gov (United States)

Matsuda, Noboru; Cohen, William W.; Koedinger, Kenneth R.

2015-01-01

SimStudent is a machine-learning agent initially developed to help novice authors to create cognitive tutors without heavy programming. Integrated into an existing suite of software tools called Cognitive Tutor Authoring Tools (CTAT), SimStudent helps authors to create an expert model for a cognitive tutor by tutoring SimStudent on how to solve…

Iodine-129 depth profiles in soil within 30 km from Fukushima Daiichi Nuclear Power Plant

International Nuclear Information System (INIS)

Honda, M.; Matsuzaki, H.; Tsuchiya, Y.S.; Nakano, C.; Yamagata, T.; Nagai, H.; Matsushi, Y.; Maejima, Y.

2013-01-01

Iodine-129 depth profiles of 13 soil cores were analyzed by AMS to evaluate the distribution and the mobility in soil. The cores were sampled from various fields around the Fukushima Daiichi Nuclear Power Plant (FDNPP). Four cores out of the 13 were collected from almost the same position in Kawauchi village crop field 20 km apart from FDNPP at different times between April 2011 and June 2012 to observe the temporal variation of depth profile of "1"2"9I in soil. On the all of 13 soil cores, clear enhancement of the accident origin "1"2"9I was observed. From the crop field soil cores in Kawauchi village, "1"2"9I inventory was estimated as 43.4±2.7 mBq m"-"2 (3.10x10"1"3 atoms m"-"2). There is positive relationship between relaxation length and the elapsed time since the FDNPP accident. The increase rate of the relaxation length is about 1 cm yr"-"1 which should reflect the downward transfer rate of the Fukushima-derived "1"2"9I. Other 9 cores were collected from various fields including crop fields and man-made soils within 30 km from FDNPP on June 2012. Cumulative "1"2"9I inventory fraction [%] from the surface was calculated. The inventory fraction within top 5 cm varied widely, 65-100% with median 82%. Similarly the inventory fraction within top 10 cm varied 82 to 100% with the median 95%. (author)

Project Status Update and SIM Science Breadth Discussion for the Origins Subcommittee (OS)

Science.gov (United States)

Marr, James C., IV; Shao, Mike

2003-01-01

This viewgraph presentation is composed of two sections The first reviews the features and the science goals of the Space Interferometry Mission (SIM). The goals are: (1) Perform a search for other planetary systems by surveying 2000 nearby stars for astrometric signatures of planetary companion, (2) Survey a sample of 200 nearby stars for orbiting planets down to terrestrial-type masses (3) Improve best current catalog of star positions by >lOOx and extend to fainter stars to allow extension of stellar knowledge to include our entire galaxy (4) Study dynamics and evolution of stars and star clusters in our galaxy to understand how our galaxy was formed and how it will evolve. (5) Calibrate luminosities of important stars and cosmological distance indicators to improve our understanding of stellar processes and to measure precise distance in the distant universe. The presentation also reviews the accomplishments since 2002, the plans for the subsequent 6 months. The second entitled "The Breadth of SIM Science," reviews SIM science goals in a larger context. SIM will serve to complement and pave the way for the Terrestrial Planet Finder (TPF). SIM observations of the motions of stars will tell us about the distribution of all gravitating mass (light plus dark matter) in the Galaxy. SIM observations of the motions of dwarf galaxies around our own will determine the mass distribution (light plus dark matter in the Halo. SIM will greatly extend these observations to test the theories of accretion disks around super massive black holes. SIM has advantages for studying AGN and other very compact objects.

A generic whole body physiologically based pharmacokinetic model for therapeutic proteins in PK-Sim.

Science.gov (United States)

Niederalt, Christoph; Kuepfer, Lars; Solodenko, Juri; Eissing, Thomas; Siegmund, Hans-Ulrich; Block, Michael; Willmann, Stefan; Lippert, Jörg

2018-04-01

Proteins are an increasingly important class of drugs used as therapeutic as well as diagnostic agents. A generic physiologically based pharmacokinetic (PBPK) model was developed in order to represent at whole body level the fundamental mechanisms driving the distribution and clearance of large molecules like therapeutic proteins. The model was built as an extension of the PK-Sim model for small molecules incorporating (i) the two-pore formalism for drug extravasation from blood plasma to interstitial space, (ii) lymph flow, (iii) endosomal clearance and (iv) protection from endosomal clearance by neonatal Fc receptor (FcRn) mediated recycling as especially relevant for antibodies. For model development and evaluation, PK data was used for compounds with a wide range of solute radii. The model supports the integration of knowledge gained during all development phases of therapeutic proteins, enables translation from pre-clinical species to human and allows predictions of tissue concentration profiles which are of relevance for the analysis of on-target pharmacodynamic effects as well as off-target toxicity. The current implementation of the model replaces the generic protein PBPK model available in PK-Sim since version 4.2 and becomes part of the Open Systems Pharmacology Suite.

Long-range depth profiling of camouflaged targets using single-photon detection

Science.gov (United States)

Tobin, Rachael; Halimi, Abderrahim; McCarthy, Aongus; Ren, Ximing; McEwan, Kenneth J.; McLaughlin, Stephen; Buller, Gerald S.

2018-03-01

We investigate the reconstruction of depth and intensity profiles from data acquired using a custom-designed time-of-flight scanning transceiver based on the time-correlated single-photon counting technique. The system had an operational wavelength of 1550 nm and used a Peltier-cooled InGaAs/InP single-photon avalanche diode detector. Measurements were made of human figures, in plain view and obscured by camouflage netting, from a stand-off distance of 230 m in daylight using only submilliwatt average optical powers. These measurements were analyzed using a pixelwise cross correlation approach and compared to analysis using a bespoke algorithm designed for the restoration of multilayered three-dimensional light detection and ranging images. This algorithm is based on the optimization of a convex cost function composed of a data fidelity term and regularization terms, and the results obtained show that it achieves significant improvements in image quality for multidepth scenarios and for reduced acquisition times.

Measuring depth profiles of residual stress with Raman spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Enloe, W.S.; Sparks, R.G.; Paesler, M.A.

1988-12-01

Knowledge of the variation of residual stress is a very important factor in understanding the properties of machined surfaces. The nature of the residual stress can determine a part`s susceptibility to wear deformation, and cracking. Raman spectroscopy is known to be a very useful technique for measuring residual stress in many materials. These measurements are routinely made with a lateral resolution of 1{mu}m and an accuracy of 0.1 kbar. The variation of stress with depth; however, has not received much attention in the past. A novel technique has been developed that allows quantitative measurement of the variation of the residual stress with depth with an accuracy of 10nm in the z direction. Qualitative techniques for determining whether the stress is varying with depth are presented. It is also demonstrated that when the stress is changing over the volume sampled, errors can be introduced if the variation of the stress with depth is ignored. Computer aided data analysis is used to determine the depth dependence of the residual stress.

Metabolic activity of uncultivated magnetotactic bacteria revealed by NanoSIMS

Science.gov (United States)

He, M.; Zhang, W.; Gu, L.; Pan, Y.; Lin, W.

2017-12-01

Microorganisms that exhibit magnetotaxis behavior, collectively known as the magnetotactic bacteria (MTB), are those whose motility is influenced by the Earth's magnetic field. MTB are a physiologically diverse group of bacteria with a unique feature of intracellular biomineralization of magnetosomes (Fe3O4 and/or Fe3S4) (Bazylinski et al., 2013). However, the ecophysiology of uncultivated MTB, especially those within the Nitrospirae phylum forming hundreds of bullet-shaped magnetite magnetosomes per cell, is still not well characterized (Lin et al., 2014). Nanoscale secondary ion mass spectrometry (NanoSIMS) is a powerful tool for revealing element distribution in nanometer-scale resolution, which opens exciting possibilities for the study of interactions between microorganisms and environments (Gao et al., 2016; Musat et al., 2016). Here we applied NanoSIMS to investigate the dynamics of carbon and nitrogen assimilations in two magnetotactic Nitrospirae populations at single cell level. Our NanoSIMS results confirmed the metabolic potential of Nitrospirae MTB proposed by genomic and metagenomic analysis and provided additional insights into the ecophysiology of uncultivated MTB. This study suggests that NanoSIMS-based analyses are powerful approaches for investigating and characterizing the ecological function of environmental microorganisms. References: Bazylinski D A., Lefèvre, C T., Schüler D., 2013. Magnetotactic Bacteria. 453-494.Lin W, Bazylinski DA, Xiao T, Wu L- F, Pan Y., 2014. Life with compass: diversity and biogeography of magnetotactic bacteria. Environ Microbiol, 16: 1462-2920.Gao D., Huang X., Tao Y., 2016. A critical review of NanoSIMS in analysis of microbial metabolic activities at single-cell level. Crit Rev Biotechnol, 36: 884-890.Musat N., Musat F., Weber PK., Pett-Ridge J., 2016. Tracking microbial interactions with NanoSIMS. Curr Opin Biotechnol, 41: 114-121.

Modelling the evolution of composition-and stress-depth profiles in austenitic stainless steels during low-temperature nitriding

DEFF Research Database (Denmark)

Jespersen, Freja Nygaard; Hattel, Jesper Henri; Somers, Marcel A. J.

2016-01-01

. In the present paper solid mechanics was combined with thermodynamics and diffusion kinetics to simulate the evolution of composition-depth and stress-depth profiles resulting from nitriding. The model takes into account a composition-dependent diffusion coefficient of nitrogen in expanded austenite, short range......Nitriding of stainless steel causes a surface zone of expanded austenite, which improves the wear resistance of the stainless steel while preserving the stainless behaviour. During nitriding huge residual stresses are introduced in the treated zone, arising from the volume expansion...... that accompanies the dissolution of high nitrogen contents in expanded austenite. An intriguing phenomenon during low-temperature nitriding is that the residual stresses evoked by dissolution of nitrogen in the solid state, affect the thermodynamics and the diffusion kinetics of nitrogen dissolution...

Microbial Community Dynamics in Soil Depth Profiles Over 120,000 Years of Ecosystem Development

Directory of Open Access Journals (Sweden)

Stephanie Turner

2017-05-01

Full Text Available Along a long-term ecosystem development gradient, soil nutrient contents and mineralogical properties change, therefore probably altering soil microbial communities. However, knowledge about the dynamics of soil microbial communities during long-term ecosystem development including progressive and retrogressive stages is limited, especially in mineral soils. Therefore, microbial abundances (quantitative PCR and community composition (pyrosequencing as well as their controlling soil properties were investigated in soil depth profiles along the 120,000 years old Franz Josef chronosequence (New Zealand. Additionally, in a microcosm incubation experiment the effects of particular soil properties, i.e., soil age, soil organic matter fraction (mineral-associated vs. particulate, O2 status, and carbon and phosphorus additions, on microbial abundances (quantitative PCR and community patterns (T-RFLP were analyzed. The archaeal to bacterial abundance ratio not only increased with soil depth but also with soil age along the chronosequence, coinciding with mineralogical changes and increasing phosphorus limitation. Results of the incubation experiment indicated that archaeal abundances were less impacted by the tested soil parameters compared to Bacteria suggesting that Archaea may better cope with mineral-induced substrate restrictions in subsoils and older soils. Instead, archaeal communities showed a soil age-related compositional shift with the Bathyarchaeota, that were frequently detected in nutrient-poor, low-energy environments, being dominant at the oldest site. However, bacterial communities remained stable with ongoing soil development. In contrast to the abundances, the archaeal compositional shift was associated with the mineralogical gradient. Our study revealed, that archaeal and bacterial communities in whole soil profiles are differently affected by long-term soil development with archaeal communities probably being better adapted to

Sims for Science: Powerful Tools to Support Inquiry-Based Teaching

Science.gov (United States)

Perkins, Katherine K.; Loeblein, Patricia J.; Dessau, Kathryn L.

2010-01-01

Since 2002, the PhET Interactive Simulations project at the University of Colorado has been working to provide learning tools for students and teachers. The project has developed over 85 interactive simulations--or sims--for teaching and learning science. Although these sims can be used in a variety of ways, they are specifically designed to make…

Graphene Oxide as a Novel Evenly Continuous Phase Matrix for TOF-SIMS.

Science.gov (United States)

Cai, Lesi; Sheng, Linfeng; Xia, Mengchan; Li, Zhanping; Zhang, Sichun; Zhang, Xinrong; Chen, Hongyuan

2017-03-01

Using matrix to enhance the molecular ion signals for biomolecule identification without loss of spatial resolution caused by matrix crystallization is a great challenge for the application of TOF-SIMS in real-world biological research. In this report, graphene oxide (GO) was used as a matrix for TOF-SIMS to improve the secondary ion yields of intact molecular ions ([M + H] + ). Identifying and distinguishing the molecular ions of lipids (m/z >700) therefore became straightforward. The spatial resolution of TOF-SIMS imaging could also be improved as GO can form a homogeneous layer of matrix instead of crystalline domain, which prevents high spatial resolution in TOF-SIMS imaging. Lipid mapping in presence of GO revealed the delicate morphology and distribution of single vesicles with a diameter of 800 nm. On GO matrix, the vesicles with similar shape but different chemical composition could be distinguished using molecular ions. This novel matrix holds potentials in such applications as the analysis and imaging of complex biological samples by TOF-SIMS. Graphical Abstract ᅟ.

Depth profiling of {sup 14} N and {sup 20} Ne implantation into iron and steel using(p, gamma) reactions. Vol. 2

Energy Technology Data Exchange (ETDEWEB)

Wriekat, A; Haj-Abdellah, M [Physics Department, University of Jordan, Amman (Jordan)

1996-03-01

Depth profiles of {sup 14} N and {sup 20} Ne ions at 800 KeV implanted into iron and by steel samples have been measured by means of the proton induced {gamma}- ray emission (Pige) technique. The range, R, and range straggling, {Delta}R for these profiles were obtained and compared with theoretical calculations. The experimental results did show that pure iron retains more N and Ne than steel. 2 figs., 1 tab.

DynaSim: A MATLAB Toolbox for Neural Modeling and Simulation.

Science.gov (United States)

Sherfey, Jason S; Soplata, Austin E; Ardid, Salva; Roberts, Erik A; Stanley, David A; Pittman-Polletta, Benjamin R; Kopell, Nancy J

2018-01-01

DynaSim is an open-source MATLAB/GNU Octave toolbox for rapid prototyping of neural models and batch simulation management. It is designed to speed up and simplify the process of generating, sharing, and exploring network models of neurons with one or more compartments. Models can be specified by equations directly (similar to XPP or the Brian simulator) or by lists of predefined or custom model components. The higher-level specification supports arbitrarily complex population models and networks of interconnected populations. DynaSim also includes a large set of features that simplify exploring model dynamics over parameter spaces, running simulations in parallel using both multicore processors and high-performance computer clusters, and analyzing and plotting large numbers of simulated data sets in parallel. It also includes a graphical user interface (DynaSim GUI) that supports full functionality without requiring user programming. The software has been implemented in MATLAB to enable advanced neural modeling using MATLAB, given its popularity and a growing interest in modeling neural systems. The design of DynaSim incorporates a novel schema for model specification to facilitate future interoperability with other specifications (e.g., NeuroML, SBML), simulators (e.g., NEURON, Brian, NEST), and web-based applications (e.g., Geppetto) outside MATLAB. DynaSim is freely available at http://dynasimtoolbox.org. This tool promises to reduce barriers for investigating dynamics in large neural models, facilitate collaborative modeling, and complement other tools being developed in the neuroinformatics community.

Benchmarking Exercises To Validate The Updated ELLWF GoldSim Slit Trench Model

International Nuclear Information System (INIS)

Taylor, G. A.; Hiergesell, R. A.

2013-01-01

The Savannah River National Laboratory (SRNL) results of the 2008 Performance Assessment (PA) (WSRC, 2008) sensitivity/uncertainty analyses conducted for the trenches located in the EArea LowLevel Waste Facility (ELLWF) were subject to review by the United States Department of Energy (U.S. DOE) Low-Level Waste Disposal Facility Federal Review Group (LFRG) (LFRG, 2008). LFRG comments were generally approving of the use of probabilistic modeling in GoldSim to support the quantitative sensitivity analysis. A recommendation was made, however, that the probabilistic models be revised and updated to bolster their defensibility. SRS committed to addressing those comments and, in response, contracted with Neptune and Company to rewrite the three GoldSim models. The initial portion of this work, development of Slit Trench (ST), Engineered Trench (ET) and Components-in-Grout (CIG) trench GoldSim models, has been completed. The work described in this report utilizes these revised models to test and evaluate the results against the 2008 PORFLOW model results. This was accomplished by first performing a rigorous code-to-code comparison of the PORFLOW and GoldSim codes and then performing a deterministic comparison of the two-dimensional (2D) unsaturated zone and three-dimensional (3D) saturated zone PORFLOW Slit Trench models against results from the one-dimensional (1D) GoldSim Slit Trench model. The results of the code-to-code comparison indicate that when the mechanisms of radioactive decay, partitioning of contaminants between solid and fluid, implementation of specific boundary conditions and the imposition of solubility controls were all tested using identical flow fields, that GoldSim and PORFLOW produce nearly identical results. It is also noted that GoldSim has an advantage over PORFLOW in that it simulates all radionuclides simultaneously - thus avoiding a potential problem as demonstrated in the Case Study (see Section 2.6). Hence, it was concluded that the follow

Benchmarking Exercises To Validate The Updated ELLWF GoldSim Slit Trench Model

Energy Technology Data Exchange (ETDEWEB)

Taylor, G. A.; Hiergesell, R. A.

2013-11-12

The Savannah River National Laboratory (SRNL) results of the 2008 Performance Assessment (PA) (WSRC, 2008) sensitivity/uncertainty analyses conducted for the trenches located in the EArea LowLevel Waste Facility (ELLWF) were subject to review by the United States Department of Energy (U.S. DOE) Low-Level Waste Disposal Facility Federal Review Group (LFRG) (LFRG, 2008). LFRG comments were generally approving of the use of probabilistic modeling in GoldSim to support the quantitative sensitivity analysis. A recommendation was made, however, that the probabilistic models be revised and updated to bolster their defensibility. SRS committed to addressing those comments and, in response, contracted with Neptune and Company to rewrite the three GoldSim models. The initial portion of this work, development of Slit Trench (ST), Engineered Trench (ET) and Components-in-Grout (CIG) trench GoldSim models, has been completed. The work described in this report utilizes these revised models to test and evaluate the results against the 2008 PORFLOW model results. This was accomplished by first performing a rigorous code-to-code comparison of the PORFLOW and GoldSim codes and then performing a deterministic comparison of the two-dimensional (2D) unsaturated zone and three-dimensional (3D) saturated zone PORFLOW Slit Trench models against results from the one-dimensional (1D) GoldSim Slit Trench model. The results of the code-to-code comparison indicate that when the mechanisms of radioactive decay, partitioning of contaminants between solid and fluid, implementation of specific boundary conditions and the imposition of solubility controls were all tested using identical flow fields, that GoldSim and PORFLOW produce nearly identical results. It is also noted that GoldSim has an advantage over PORFLOW in that it simulates all radionuclides simultaneously - thus avoiding a potential problem as demonstrated in the Case Study (see Section 2.6). Hence, it was concluded that the follow

The Structured Inventory of Malingered Symptomatology (SIMS): a systematic review and meta-analysis.

Science.gov (United States)

van Impelen, Alfons; Merckelbach, Harald; Jelicic, Marko; Merten, Thomas

2014-01-01

We meta-analytically reviewed studies that used the Structured Inventory of Malingered Symptomatology (SIMS) to detect feigned psychopathology. We present weighted mean diagnostic accuracy and predictive power indices in various populations, based on 31 studies, including 61 subsamples and 4009 SIMS protocols. In addition, we provide normative data of patients, claimants, defendants, nonclinical adults, and various experimental feigners, based on 41 studies, including 125 subsamples and 4810 SIMS protocols. We conclude that the SIMS (1) is able to differentiate well between instructed feigners and honest responders; (2) generates heightened scores in groups that are known to have a raised prevalence of feigning (e.g., offenders who claim crime-related amnesia); (3) may overestimate feigning in patients who suffer from schizophrenia, intellectual disability, or psychogenic non-epileptic seizures; and (4) is fairly robust against coaching. The diagnostic power of the traditional cut scores of the SIMS (i.e., > 14 and > 16) is not so much limited by their sensitivity—which is satisfactory—but rather by their substandard specificity. This, however, can be worked around by combining the SIMS with other symptom validity measures and by raising the cut score, although the latter solution sacrifices sensitivity for specificity.

ToF-SIMS analysis for leaching studies of potash–lime–silica glass

International Nuclear Information System (INIS)

De Bardi, Monica; Hutter, Herbert; Schreiner, Manfred

2013-01-01

In this work the durability to acidic solutions of two kinds of potash–lime–silica glasses with compositions typical for mediaeval stained glass was investigated. The low amount of network formers such as silica and alumina, and the high amount of network modifiers such as potassium and calcium, give to the glass a lower chemical stability compared to modern glass. Studies on its durability are of interest to understand degradation mechanisms. In particular the leaching procedure was focused on determining any correlation between the type of acid and the corrosion of glass independently from the pH value, which was kept constant during the different acidic treatments. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is a valuable tool to study compositional variations of glass, giving useful information concerning provenance, effects of the conservation environment, of weathering or leaching processes and about the compositional differences between the corroded layer and the bulk as a function of depth. In spite of that the insulating properties of glass, the surface roughness and the parameters used for the measurements can lead to possible misinterpretations of the results; in this paper these difficulties are discussed, in order to better interpret the analyses performed on leached glass. ToF-SIMS data are influenced by strong matrix effects making quantification difficult; for this reason the quantitative composition and surface morphology of the leached layer were additionally investigated with scanning electron microscopy equipped with energy dispersive X-ray spectroscopy (SEM–EDX)

SimCP3—An Advanced Homologue of SimCP2 as a Solution-Processed Small Molecular Host Material for Blue Phosphorescence Organic Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Yi-Ting Lee

2016-09-01

Full Text Available We have overcome the synthetic difficulty of 9,9′,9′′,9′′′,9′′′′,9′′′′′-((phenylsilanetriyltris(benzene-5,3,1-triylhexakis(9H-carbazole (SimCP3 an advanced homologue of previously known SimCP2 as a solution-processed, high triplet gap energy host material for a blue phosphorescence dopant. A series of organic light-emitting diodes based on blue phosphorescence dopant iridium (III bis(4,6-difluorophenylpyridinatopicolate, FIrpic, were fabricated and tested to demonstrate the validity of solution-processed SimCP3 in the device fabrication.

A Study of the arsenic profiles in NMOS by using chemical etching and simulation

International Nuclear Information System (INIS)

Jung, Won-Chae; Lee, Kil-Dong

2004-01-01

For integrated semiconductor devices, the one-, two-, and three-dimensional impurity distributions are very important for the analyzing the devices. The one-dimensional arsenic profiles were measured by using secondary ion mass spectroscopy (SIMS), and simulation data were obtained by using the TSUPREM4 and UT-Marlowe programs. The two-dimensional profiles of arsenic were directly measured by using the chemical etching-method, and the measured 2D profiles were compared with simulation data obtained from TSUPREM4. A Taurus simulation tool was used to obtain the 3D arsenic profiles. The simulated data of UT-Marlowe in 1D agreed very well with the SIMS data. The measured two-dimensional transmission electron microscope (TEM) data obtained by using the chemical etching-method matched very well with the results of the TSUPREM4 simulation. The chemical etching and the TEM measurement methods demonstrated and visualized the two-dimensional impurity distributions and structures of the devices.

Chemical Visualization of Sweat Pores in Fingerprints Using GO-Enhanced TOF-SIMS.

Science.gov (United States)

Cai, Lesi; Xia, Meng-Chan; Wang, Zhaoying; Zhao, Ya-Bin; Li, Zhanping; Zhang, Sichun; Zhang, Xinrong

2017-08-15

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) has been used in imaging of small molecules (SIMS was used to detect and image relatively high mass molecules such as poison, alkaloids (>600 Da) and controlled drugs, and antibiotics (>700 Da) in fingerprints. Detail features of fingerprints such as the number and distribution of sweat pores in a ridge and even the delicate morphology of one pore were clearly revealed in SIMS images of relatively high mass molecules. The detail features combining with identified chemical composition were sufficient to establish a human identity and link the suspect to a crime scene. The wide detectable mass range and high spatial resolution make GO-enhanced TOF-SIMS a promising tool in accurate and fast analysis of fingerprints, especially in fragmental fingerprint analysis.

Chemical solution-deposited PbZr 0.53 Ti 0.47 O3 on La 0.5 Sr 0.5 Co O3. SIMS investigation of the effect of different precursor additives on the layer structure.

Science.gov (United States)

Pollak, C; Malic, B; Kosec, M; Javoric, S; Hutter, H

2002-10-01

Chemical solution-deposited thin films of PbZr(0.53)Ti(0.47)O(3)/La(0.5)Sr(0.5)CoO(3) on Pt/TiO(2)/SiO(2)/Si substrates have been investigated by dynamic SIMS. The PbZr(0.53)Ti(0.47)O(3) (PZT) is intended to serve as a ferroelectric layer for microelectronic or microelectromechanical applications; conducting La(0.5)Sr(0.5)CoO(3) (LSCO) is a buffer layer intended to eliminate fatigue effects which usually occur at the Pt/PZT interface. Depth profiles of the main components were obtained and revealed that significant diffusion occurred during the deposition and crystallisation processes. Two types of sample, with different thickness of PZT and different types of poly(vinyl alcohol) (PVA) added to the LSCO precursor, were investigated.

Preparing strategic information management plans for hospitals: a practical guideline SIM plans for hospitals: a guideline.

Science.gov (United States)

Brigl, B; Ammenwerth, E; Dujat, C; Gräber, S; Grosse, A; Häber, A; Jostes, C; Winter, A

2005-01-01

Systematic information management in hospitals demands for a strategic information management plan (SIM plan). As preparing a SIM plan is a considerable challenge we provide a practical guideline that is directly applicable when a SIM plan is going to be prepared. The guideline recommends a detailed structure of a SIM plan and gives advice about its content and the preparation process. It may be used as template, which can be adapted to the individual demands of any hospital. The guideline was used in several hospitals preparing a SIM plan. Experiences showed that the SIM plans could be prepared very efficiently and timely using the guideline, that the proposed SIM plan structure suited well, that the guideline offers enough flexibility to meet the requirements of the individual hospitals and that the specific recommendations of the guideline were very helpful. Nevertheless, we must strive for a more comprehensive theory of strategic information management planning which -- in the sense of enterprise architecture planning -- represents the intrinsic correlations of the different parts of a SIM plan to a greater extent.

Revised mechanism of Boyland-Sims oxidation.

Science.gov (United States)

Marjanović, Budimir; Juranić, Ivan; Cirić-Marjanović, Gordana

2011-04-21

New computational insights into the mechanism of the Boyland-Sims oxidation of arylamines with peroxydisulfate (S(2)O(8)(2-)) in an alkaline aqueous solution are presented. The key role of arylnitrenium cations, in the case of primary and secondary arylamines, and arylamine dications and immonium cations, in the case of tertiary arylamines, in the formation of corresponding o-aminoaryl sulfates, as prevalent soluble products, and oligoarylamines, as prevalent insoluble products, is proposed on the basis of the AM1 and RM1 computational study of the Boyland-Sims oxidation of aniline, ring-substituted (2-methylaniline, 3-methylaniline, 4-methylaniline, 2,6-dimethylaniline, anthranilic acid, 4-aminobenzoic acid, sulfanilic acid, sulfanilamide, 4-phenylaniline, 4-bromoaniline, 3-chloroaniline, and 2-nitroaniline) and N-substituted anilines (N-methylaniline, diphenylamine, and N,N-dimethylaniline). Arylnitrenium cations and sulfate anions (SO(4)(2-)) are generated by rate-determining two-electron oxidation of primary and secondary arylamines with S(2)O(8)(2-), while arylamine dications/immonium cations and SO(4)(2-) are initially formed by two-electron oxidation of tertiary arylamines with S(2)O(8)(2-). The subsequent regioselectivity-determining reaction of arylnitrenium cations/arylamine dications/immonium cations and SO(4)(2-), within the solvent cage, is computationally found to lead to the prevalent formation of o-aminoaryl sulfates. The formation of insoluble precipitates during the Boyland-Sims oxidation of arylamines was also computationally studied.

Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer

Science.gov (United States)

Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.

2018-01-01

In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer.

Using SIM for strong end-to-end Application Authentication

OpenAIRE

Lunde, Lars; Wangensteen, Audun

2006-01-01

Today the Internet is mostly used for services that require low or none security. The commercial and governmental applications have started to emerge but met problems since they require strong authentication, which is both difficult and costly to realize. The SIM card used in mobile phones is a tamper resistant device that contains strong authentication mechanisms. It would be very convenient and cost-efficient if Internet services could use authentication methods based on the SIM. This mast...

Improving SysSim's Planetary Occurrence Rate Estimates

Science.gov (United States)

Ashby, Keir; Ragozzine, Darin; Hsu, Danley; Ford, Eric B.

2017-10-01

Kepler's catalog of thousands of transiting planet candidates enables statistical characterization of the underlying planet occurrence rates as a function of period and radius. Due to geometric factors and general noise in measurements, we know that many planets--especially those with a small-radius and/or long-period--were not observed by Kepler.To account for Kepler's detection criteria, Hsu et al. 2017 expanded on work in Lissuaer et al. 2011 to develop the Planetary System Simulator or "SysSim". SysSim uses a forward model to generate simulated catalogs of exoplanet systems, determine which of those simulated planets would have been seen by Kepler in the presence of uncertainties, and then compares those “observed planets” to those actually seen by Kepler. It then uses Approximate Bayesian Computation to infer the posterior probability distributions of the input parameters used to generate the forward model. In Hsu et al. 2017, we focused on matching the observed frequency of planets by solving for the underlying occurrence rate for each bin in a 2-dimensional grid of radius and period. After summarizing the results of Hsu et al. 2017, we show new results that investigate the effect on occurrence rates from including more accurate completeness products (from the Kepler DR25 analysis) into SysSim.

Small scale temporal distribution of radiocesium in undisturbed coniferous forest soil: Radiocesium depth distribution profiles.

Science.gov (United States)

Teramage, Mengistu T; Onda, Yuichi; Kato, Hiroaki

2016-04-01

The depth distribution of pre-Fukushima and Fukushima-derived (137)Cs in undisturbed coniferous forest soil was investigated at four sampling dates from nine months to 18 months after the Fukushima nuclear power plant accident. The migration rate and short-term temporal variability among the sampling profiles were evaluated. Taking the time elapsed since the peak deposition of pre-Fukushima (137)Cs and the median depth of the peaks, its downward displacement rates ranged from 0.15 to 0.67 mm yr(-1) with a mean of 0.46 ± 0.25 mm yr(-1). On the other hand, in each examined profile considerable amount of the Fukushima-derived (137)Cs was found in the organic layer (51%-92%). At this moment, the effect of time-distance on the downward distribution of Fukushima-derived (137)Cs seems invisible as its large portion is still found in layers where organic matter is maximal. This indicates that organic matter seems the primary and preferential sorbent of radiocesium that could be associated with the physical blockage of the exchanging sites by organic-rich dusts that act as a buffer against downward propagation of radiocesium, implying radiocesium to be remained in the root zone for considerable time period. As a result, this soil section can be a potential source of radiation dose largely due to high radiocesium concentration coupled with its low density. Generally, such kind of information will be useful to establish a dynamic safety-focused decision support system to ease and assist management actions. Copyright © 2016 Elsevier Ltd. All rights reserved.

The combined measurement of uranium by alpha spectrometry and secondary ion mass spectrometry (SIMS)

International Nuclear Information System (INIS)

Harvan, D.

2009-01-01

The aim of thesis was to found the dependence between radiometric method - alpha spectrometry and surface sensitive method - Secondary Ion Mass Spectrometry (SIMS). Uranium or naturally occurring uranium isotopes were studied. Samples (high polished stainless steel discs) with uranium isotopes were prepared by electrodeposition. Samples were measured by alpha spectrometry after electrodeposition and treatment. It gives surface activities. Weights, as well as surface's weights of uranium isotopes were calculated from their activities, After alpha spectrometry samples were analyzed by TOF-SIMS IV instrument in International Laser Centre in Bratislava. By the SIMS analysis intensities of uranium-238 were obtained. The interpretation of SIMS intensities vs. surface activity, or surface's weights of uranium isotopes indicates the possibility to use SIMS in quantitative analysis of surface contamination by uranium isotopes, especially 238 U. (author)

Study and optimisation of SIMS performed with He+ and Ne+ bombardment

International Nuclear Information System (INIS)

Pillatsch, L.; Vanhove, N.; Dowsett, D.; Sijbrandij, S.; Notte, J.; Wirtz, T.

2013-01-01

The combination of the high-brightness He + /Ne + atomic level ion source with the detection capabilities of secondary ion mass spectrometry (SIMS) opens up the prospect of obtaining chemical information with high lateral resolution and high sensitivity on the Zeiss ORION helium ion microscope (HIM). A feasibility study with He + and Ne + ion bombardment is presented in order to determine the performance of SIMS analyses using the HIM. Therefore, the sputtering yields, useful yields and detection limits obtained for metallic (Al, Ni and W) as well as semiconductor samples (Si, Ge, GaAs and InP) were investigated. All the experiments were performed on a Cameca IMS4f SIMS instrument which was equipped with a caesium evaporator and oxygen flooding system. For most of the elements, useful yields in the range of 10 −4 to 3 × 10 −2 were measured with either O 2 or Cs flooding. SIMS experiments performed directly on the ORION with a prototype secondary ion extraction and detection system lead to results that are consistent with those obtained on the IMS4f. Taking into account the obtained useful yields and the analytical conditions, such as the ion current and typical dwell time on the ORION HIM, detection limits in the at% range and better can be obtained during SIMS imaging at 10 nm lateral resolution with Ne + bombardment and down to the ppm level when a lateral resolution of 100 nm is chosen. Performing SIMS on the HIM with a good detection limit while maintaining an excellent lateral resolution (<50 nm) is therefore very promising.

Time-of-flight SIMS/MSRI reflectron mass analyzer and method

Science.gov (United States)

Smentkowski, Vincent S.; Gruen, Dieter M.; Krauss, Alan R.; Schultz, J. Albert; Holecek, John C.

1999-12-28

A method and apparatus for analyzing the surface characteristics of a sample by Secondary Ion Mass Spectroscopy (SIMS) and Mass Spectroscopy of Recoiled Ions (MSRI) is provided. The method includes detecting back scattered primary ions, low energy ejected species, and high energy ejected species by ion beam surface analysis techniques comprising positioning a ToF SIMS/MSRI mass analyzer at a predetermined angle .theta., where .theta. is the angle between the horizontal axis of the mass analyzer and the undeflected primary ion beam line, and applying a specific voltage to the back ring of the analyzer. Preferably, .theta. is less than or equal to about 120.degree. and, more preferably, equal to 74.degree.. For positive ion analysis, the extractor, lens, and front ring of the reflectron are set at negative high voltages (-HV). The back ring of the reflectron is set at greater than about +700V for MSRI measurements and between the range of about +15 V and about +50V for SIMS measurements. The method further comprises inverting the polarity of the potentials applied to the extractor, lens, front ring, and back ring to obtain negative ion SIMS and/or MSRI data.

Challenges of biological sample preparation for SIMS imaging of elements and molecules at subcellular resolution

International Nuclear Information System (INIS)

Chandra, Subhash

2008-01-01

Secondary ion mass spectrometry (SIMS) based imaging techniques capable of subcellular resolution characterization of elements and molecules are becoming valuable tools in many areas of biology and medicine. Due to high vacuum requirements of SIMS, the live cells cannot be analyzed directly in the instrument. The sample preparation, therefore, plays a critical role in preserving the native chemical composition for SIMS analysis. This work focuses on the evaluation of frozen-hydrated and frozen freeze-dried sample preparations for SIMS studies of cultured cells with a CAMECA IMS-3f dynamic SIMS ion microscope instrument capable of producing SIMS images with a spatial resolution of 500 nm. The sandwich freeze-fracture method was used for fracturing the cells. The complimentary fracture planes in the plasma membrane were characterized by field-emission secondary electron microscopy (FESEM) in the frozen-hydrated state. The cells fractured at the dorsal surface were used for SIMS analysis. The frozen-hydrated SIMS analysis of individual cells under dynamic primary ion beam (O 2 + ) revealed local secondary ion signal enhancements correlated with the water image signals of 19 (H 3 O) + . A preferential removal of water from the frozen cell matrix in the Z-axis was also observed. These complications render the frozen-hydrated sample type less desirable for subcellular dynamic SIMS studies. The freeze-drying of frozen-hydrated cells, either inside the instrument or externally in a freeze-drier, allowed SIMS imaging of subcellular chemical composition. Morphological evaluations of fractured freeze-dried cells with SEM and confocal laser scanning microscopy (CLSM) revealed well-preserved mitochondria, Golgi apparatus, and stress fibers. SIMS analysis of fractured freeze-dried cells revealed well-preserved chemical composition of even the most highly diffusible ions like K + and Na + in physiologically relevant concentrations. The high K-low Na signature in individual cells

Challenges of biological sample preparation for SIMS imaging of elements and molecules at subcellular resolution

Science.gov (United States)

Chandra, Subhash

2008-12-01

Secondary ion mass spectrometry (SIMS) based imaging techniques capable of subcellular resolution characterization of elements and molecules are becoming valuable tools in many areas of biology and medicine. Due to high vacuum requirements of SIMS, the live cells cannot be analyzed directly in the instrument. The sample preparation, therefore, plays a critical role in preserving the native chemical composition for SIMS analysis. This work focuses on the evaluation of frozen-hydrated and frozen freeze-dried sample preparations for SIMS studies of cultured cells with a CAMECA IMS-3f dynamic SIMS ion microscope instrument capable of producing SIMS images with a spatial resolution of 500 nm. The sandwich freeze-fracture method was used for fracturing the cells. The complimentary fracture planes in the plasma membrane were characterized by field-emission secondary electron microscopy (FESEM) in the frozen-hydrated state. The cells fractured at the dorsal surface were used for SIMS analysis. The frozen-hydrated SIMS analysis of individual cells under dynamic primary ion beam (O 2+) revealed local secondary ion signal enhancements correlated with the water image signals of 19(H 3O) +. A preferential removal of water from the frozen cell matrix in the Z-axis was also observed. These complications render the frozen-hydrated sample type less desirable for subcellular dynamic SIMS studies. The freeze-drying of frozen-hydrated cells, either inside the instrument or externally in a freeze-drier, allowed SIMS imaging of subcellular chemical composition. Morphological evaluations of fractured freeze-dried cells with SEM and confocal laser scanning microscopy (CLSM) revealed well-preserved mitochondria, Golgi apparatus, and stress fibers. SIMS analysis of fractured freeze-dried cells revealed well-preserved chemical composition of even the most highly diffusible ions like K + and Na + in physiologically relevant concentrations. The high K-low Na signature in individual cells

National Coral Reef Monitoring Program: Shallow Water Conductivity-Temperature-Depth (CTD) Profiles for selected locations across the Pacific Remote Island Areas since 2014

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — Near-shore shallow water Conductivity-Temperature-Depth (CTD) surveys provided vertical profiles of temperature, salinity, and turbidity providing indications for...

Depth profiling the solid electrolyte interphase on lithium titanate (Li4Ti5O12) using synchrotron-based photoelectron spectroscopy

DEFF Research Database (Denmark)

Nordh, Tim; Younesi, Reza; Brandell, Daniel

2015-01-01

The presence of a surface layer on lithium titanate (Li4Ti5O12, LTO) anodes, which has been a topic of debate in scientific literature, is here investigated with tunable high surface sensitive synchrotron-based photoelectron spectroscopy (PES) to obtain a reliable depth profile of the interphase...

Did J. Marion Sims deliberately addict his first fistula patients to opium?

Science.gov (United States)

Wall, L Lewis

2007-07-01

American surgeon J. Marion Sims (1813-83) is regarded by many modern authors as a controversial figure because he carried out a series of experimental surgeries on enslaved African American women between 1846 and 1849 in an attempt to cure them of vesicovaginal fistulas, which they had all developed as a result of prolonged obstructed labor. He operated on one woman, Anarcha Westcott, thirty times before he successfully closed her fistula. Sims performed these fistula repair operations without benefit of anesthesia but gave these women substantial doses of opium afterwards. Several modern writers have alleged that Sims did this in order to addict them to the drug and thereby to enhance his control over them. This article examines the controversy surrounding Sims' use of postoperative opium in these enslaved surgical patients. The evidence suggests that although these women were probably tolerant to the doses of opium that he used, there is no evidence that he deliberately tried to addict them to this drug. Sims' use of postoperative opium appears to have been well supported by the therapeutic practices of his day, and the regimen that he used was enthusiastically supported by many contemporary surgeons.

Multielement ultratrace analysis in tungsten using secondary ion mass spectrometry

International Nuclear Information System (INIS)

Wilhartitz, P.; Virag, A.; Friedbacher, G.; Grasserbauer, M.

1987-01-01

The ever increasing demands on properties of materials create a trend also towards ultrapure products. Characterization of these materials is only possible with modern, highly sophisticated analytical techniques such as activation analysis and mass spectrometry, particularly SSMS, SIMS and GDMS. Analytical strategies were developed for the determination of about 40 elements in a tungsten matrix with high-performance SIMS. Difficulties like the elimination of interferences had to be overcome. Extrapolated detection limits were established in the range of pg/g (alkali metals, halides) to ng/g (e.g. Ta, Th). Depth profiling and ion imaging gave additional information about the lateral and the depth distribution of the elements. (orig.)

Towards a SIM-Less Existence: The Evolution of Smart Learning Networks

Science.gov (United States)

Al-Khouri, Ali M.

2015-01-01

This article proposes that the widespread availability of wireless networks creates a case in which there is no real need for SIM cards. Recent technological developments offer the capability to outperform SIM cards and provide more innovative dimensions to current systems of mobility. In this context of changing realities in the domain of…

SIMS and TEM study on oxide characteristics of Zircaloy

International Nuclear Information System (INIS)

Jung, Y. H.; Baek, J. H.; Kim, S. J.; Kim, K. H.; Choi, B. K.; Jung, Y. H.

1998-01-01

Long-term corrosion test, SIMS analysis, and TEM study were carried out to investigate the corrosion characteristics and corrosion mechanism of Zircaloy-4 in LiOH solution. The corrosion tests were performed in alkali solutions at 350 deg C for 500days. SIMS analysis was performed for the specimens prepared to have an equal oxide thickness to measure the cation content. TEM studies on the samples formed in various alkali solutions were also conducted. Based on the corrosion test, SIMS analysis, and TEM study, the cation is considered to control the corrosion in LiOH solution and its effect is dependent on the concentration of alkali and the oxide thickness. The slight acceleration of corrosion rate at a low concentration is thought to be caused by the cation incorporation into oxide while the significant acceleration at a high concentration is due to the transformation of oxide microstructure that would be induced by the cation incorporation

TOF-SIMS characterization of planktonic foraminifera

International Nuclear Information System (INIS)

Vering, G.; Crone, C.; Bijma, J.; Arlinghaus, H.F.

2003-01-01

Oceanic sediment properties that are closely related to former environmental (e.g. climatic) parameters are called 'proxies'. Planktonic foraminifera are small protists which make up part of the plankton. Certain element concentrations, element ratios and isotopic ratios of their calcite shell found in the sediment can be used as proxies reflecting the state of the ocean during the life of the animal; they supply useful information for the reconstruction of environmental parameters. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) was used to examine the inner and outer part of foraminiferal shells, as well as foraminiferal shells dissolved in HCl. High resolution elemental images and mass spectra were obtained from the foraminifera. The data show that TOF-SIMS is a useful technique for determining the elemental distribution and for measuring isotope ratios such as δ 11 B with high precision in a single foraminiferal shell

TOF-SIMS characterization of planktonic foraminifera

Energy Technology Data Exchange (ETDEWEB)

Vering, G.; Crone, C.; Bijma, J.; Arlinghaus, H.F

2003-01-15

Oceanic sediment properties that are closely related to former environmental (e.g. climatic) parameters are called 'proxies'. Planktonic foraminifera are small protists which make up part of the plankton. Certain element concentrations, element ratios and isotopic ratios of their calcite shell found in the sediment can be used as proxies reflecting the state of the ocean during the life of the animal; they supply useful information for the reconstruction of environmental parameters. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) was used to examine the inner and outer part of foraminiferal shells, as well as foraminiferal shells dissolved in HCl. High resolution elemental images and mass spectra were obtained from the foraminifera. The data show that TOF-SIMS is a useful technique for determining the elemental distribution and for measuring isotope ratios such as {delta}{sup 11}B with high precision in a single foraminiferal shell.

Arabian Sea GEOSECS stations revisited: Tracer-depth profiles reveal temporal variations?

International Nuclear Information System (INIS)

Mulsow, S.; Povinec, P.P.; Somayajulu, B.L.K.

2002-01-01

In March-April 1998, the Physical Research Laboratory and the Regional Research Laboratory (Ahmedabad, India) together with the IAEA Marine Environment Laboratory, Monaco, participated in the research mission to visit GEOSECS (Geochemical Ocean Sections Study) stations in the Arabian Sea. The main objective was to reoccupy these stations which were sampled in the early seventies to observe possible time variations in trace behaviour in this region. It is generally accepted that both natural (climate variations) and anthropogenic (greenhouse effect) changes can cause modifications of the oceanic characteristics and properties of deep waters on yearly and decadal scales. For long time-scales (100 to 1000 years) one needs to look at the sediments where these changes are subtly recorded. Tracers such as 14 C and 3 H (deep waters) and 228 Ra surface waters are useful markers of water circulation patterns and changes. Also man-made radiotracers such as 90 Sr, 137 Cs, 99 Tc, 238 Pu, 239 , 240 Pu and 241 Am, can give information on air-sea exchange as well as penetration (vertical change) rates in the open ocean [2]. We visited GEOSECS stations 415 to 419. In each station, CTD profiles, 3 H, 14 C, 90 Sr, 137 Cs, Pu and Am profiles, nutrients, Be, TOC and oxygen were determined from surface to bottom. Also uranium and trace elements were sampled in function of the oxygen minimum zone. In this paper we report the findings on the physical properties as well as the variations in water circulation patterns and also vertical exchange rates in the Arabian Sea. PSU profiles collected in this mission compared with those PSU profiles measured in 1974 (GEOSECS) showed marked differences in those stations located in the southeast part of the Arabian Sea. In contrast, those located more towards the north (415-416) showed little temporal variation. We think these changes may be real given that the PSU values at depth are comparable and reflect the presence of deep Antarctic bottom

Secondary ion emission from ultra-thin oxide layers bombarded by energetic (MeV) heavy ions: depth of origin and layer homogeneity

International Nuclear Information System (INIS)

Allali, H.; Nsouli, B.; Thomas, J.P.; Cabaud, B.; Fuchs, G.; Hoareau, A.; Treilleux, M.; Danel, J.S.

1993-09-01

The escape depth of the secondary ions resulting from electronic sputtering of fast heavy ions in inorganic thin films has been investigated. Chromium layers deposited onto SiO 2 substrate as well as SiO x layers deposited onto chromium substrate have been characterized by secondary ion emission mass spectrometry (SIMS) in combination with time-of-flight (TOF) mass analysis (also referred as HSF-SIMS). These crossed experiments lead to a value around 1 nm for SiO x layers and 0.5 nm for Cr layers. On the other hand, HSF-SIMS can be used to correlate the intensity of the secondary ion emission to the film coverage rate and (or) the morphology of particular films like those produced by Low Energy Cluster Beam Deposition (LECBD). Using Sb deposits, the non-linear relationship between ion emission and coverage is interpreted in terms of sputtering enhancement in the individual supported clusters. (author) 22 refs., 9 figs., 1 tab

CystiSim - an agent-based model for Taenia solium transmission and control

DEFF Research Database (Denmark)

Braae, Uffe Christian; Devleesschauwer, Brecht; Gabriël, Sarah

2016-01-01

Taenia solium taeniosis/cysticercosis was declared eradicable by the International Task Force for Disease Eradication in 1993, but remains a neglected zoonosis. To assist in the attempt to regionally eliminate this parasite, we developed cystiSim, an agent-based model for T. solium transmission...... interventions in both hosts, mass drug administration to humans, and vaccination and treatment of pigs, have a high probability of success if coverage of 75% can be maintained over at least a four year period. In comparison with an existing mathematical model for T. solium transmission, cystiSim also includes...... and control. The model was developed in R and available as an R package (http://cran.r-project.org/package=cystiSim). cystiSim was adapted to an observed setting using field data from Tanzania, but adaptable to other settings if necessary. The model description adheres to the Overview, Design concepts...

Magnitude of shear stress on the san andreas fault: implications of a stress measurement profile at shallow depth.

Science.gov (United States)

Zoback, M D; Roller, J C

1979-10-26

A profile of measurements of shear stress perpendicular to the San Andreas fault near Palmdale, California, shows a marked increase in stress with distance from the fault. The pattern suggests that shear stress on the fault increases slowly with depth and reaches a value on the order of the average stress released during earthquakes. This result has important implications for both long- and shortterm prediction of large earthquakes.

Quantitative SIMS Imaging of Agar-Based Microbial Communities.

Science.gov (United States)

Dunham, Sage J B; Ellis, Joseph F; Baig, Nameera F; Morales-Soto, Nydia; Cao, Tianyuan; Shrout, Joshua D; Bohn, Paul W; Sweedler, Jonathan V

2018-05-01

After several decades of widespread use for mapping elemental ions and small molecular fragments in surface science, secondary ion mass spectrometry (SIMS) has emerged as a powerful analytical tool for molecular imaging in biology. Biomolecular SIMS imaging has primarily been used as a qualitative technique; although the distribution of a single analyte can be accurately determined, it is difficult to map the absolute quantity of a compound or even to compare the relative abundance of one molecular species to that of another. We describe a method for quantitative SIMS imaging of small molecules in agar-based microbial communities. The microbes are cultivated on a thin film of agar, dried under nitrogen, and imaged directly with SIMS. By use of optical microscopy, we show that the area of the agar is reduced by 26 ± 2% (standard deviation) during dehydration, but the overall biofilm morphology and analyte distribution are largely retained. We detail a quantitative imaging methodology, in which the ion intensity of each analyte is (1) normalized to an external quadratic regression curve, (2) corrected for isomeric interference, and (3) filtered for sample-specific noise and lower and upper limits of quantitation. The end result is a two-dimensional surface density image for each analyte. The sample preparation and quantitation methods are validated by quantitatively imaging four alkyl-quinolone and alkyl-quinoline N-oxide signaling molecules (including Pseudomonas quinolone signal) in Pseudomonas aeruginosa colony biofilms. We show that the relative surface densities of the target biomolecules are substantially different from values inferred through direct intensity comparison and that the developed methodologies can be used to quantitatively compare as many ions as there are available standards.

Hydraulic Arm Modeling via Matlab SimHydraulics

Czech Academy of Sciences Publication Activity Database

Věchet, Stanislav; Krejsa, Jiří

2009-01-01

Roč. 16, č. 4 (2009), s. 287-296 ISSN 1802-1484 Institutional research plan: CEZ:AV0Z20760514 Keywords : simulatin modeling * hydraulics * SimHydraulics Subject RIV: JD - Computer Applications, Robotics

SIMS analysis: Development and evaluation 1995 summary report

International Nuclear Information System (INIS)

Groenewold, G.S.; Appelhans, A.D.; Ingram, J.C.; Delmore, J.E.; Dahl, D.A.

1995-10-01

Secondary ion mass spectrometry (SIMS) was evaluated for characterizing Hg salts. It was found that sulfate and chloride species could be identified directly without sample preparation. Mercuric oxide could be identified by complexation with formic acid. Hg nitrates could be identified by complexation with cyclohexylamine (CHA). Laser desorption ion trap MS was evaluated for characterizing EDTA on environmental samples. No intact EDTA ions were observed, but a series of EDTA fragment ions were visible, particularly on basalt and soil. An ion trap SIMS was developed: a perrhenate ion gun was interfaced to a Teledyne ion trap spectrometer, and the entire device was mounted on a cart. The technology was demonstrated using a prototype ion trap SIMS instrument for detecting Hg·CHA complexes formed from nitrate salts. Intensity of the ion gun was improved, and the surface damage of the particle was small, and ion gun technology transfer to Phi-Evans, Inc. is being considered. Two technology end users are at INEL's Central Facilities Area 674 pond and acid pit of the Radioactive Waste Management Complex; target problem at both sites is the need for Hg speciation on soil samples

A Sim(2 invariant dimensional regularization

Directory of Open Access Journals (Sweden)

J. Alfaro

2017-09-01

Full Text Available We introduce a Sim(2 invariant dimensional regularization of loop integrals. Then we can compute the one loop quantum corrections to the photon self energy, electron self energy and vertex in the Electrodynamics sector of the Very Special Relativity Standard Model (VSRSM.

In vivo confocal Raman microscopic determination of depth profiles of the stratum corneum lipid organization influenced by application of various oils.

Science.gov (United States)

Choe, ChunSik; Schleusener, Johannes; Lademann, Jürgen; Darvin, Maxim E

2017-08-01

The intercellular lipids (ICL) of stratum corneum (SC) play an important role in maintaining the skin barrier function. The lateral and lamellar packing order of ICL in SC is not homogenous, but rather depth-dependent. This study aimed to analyze the influence of the topically applied mineral-derived (paraffin and petrolatum) and plant-derived (almond oil and jojoba oil) oils on the depth-dependent ICL profile ordering of the SC in vivo. Confocal Raman microscopy (CRM), a unique tool to analyze the depth profile of the ICL structure non-invasively, is employed to investigate the interaction between oils and human SC in vivo. The results show that the response of SC to oils' permeation varies in the depths. All oils remain in the upper layers of the SC (0-20% of SC thickness) and show predominated differences of ICL ordering from intact skin. In these depths, skin treated with plant-derived oils shows more disordered lateral and lamellar packing order of ICL than intact skin (p0.1), except plant-derived oils at the depth 30% of SC thickness. In the deeper layers of the SC (60-100% of SC thickness), no difference between ICL lateral packing order of the oil-treated and intact skin can be observed, except that at the depths of 70-90% of the SC thickness, where slight changes with more disorder states are measured for plant-derived oil treated skin (p<0.1), which could be explained by the penetration of free fatty acid fractions in the deep-located SC areas. Both oil types remain in the superficial layers of the SC (0-20% of the SC thickness). Skin treated with mineral- and plant-derived oils shows significantly higher disordered lateral and lamellar packing order of ICL in these layers of the SC compared to intact skin. Plant-derived oils significantly changed the ICL ordering in the depths of 30% and 70-90% of the SC thickness, which is likely due to the penetration of free fatty acids in the deeper layers of the SC. Copyright © 2017 Japanese Society for

Oxygen depth profiling using the 16O(d,α)14N nuclear reaction

International Nuclear Information System (INIS)

Khubeis, I.; Al-Rjob, R.

1997-01-01

The excitation function of the 16 O(d,α) 14 N nuclear reaction has been determined in the deuteron energy range of 0.88-2.28 MeV. Major resonances are observed at deuteron energies of 0.98, 1.31, 1.53, 1.60, 1.73 and 2.22 MeV. The present results show good agreement with those of Haase and Khubeis, however there is a shift of 60 keV in the first resonance compared with the measurements of Amsel. The use of a thin surface barrier detector (t=22 μm) and a bias voltage of +20 V coupled with a proper pile-up rejection circuit has allowed the determination of the oxygen depth profiling to a resolution of 16 nm for thick targets. This method is efficient in eliminating interferences from other nuclear reactions such as 16 O(d,p) 17 O and 12 C(d,p) 19 C, where emitted protons have severely obscured α-particles from the 16 O(d,α) 14 N reaction. A 1.08 MeV deuteron beam has been employed to increase the α-yield from the target. The target has been tilted at 70 to enhance depth resolution. This reaction is well suited for the determination of oxygen concentration in oxides of high temperature superconductors. (orig.)

SimHap GUI: an intuitive graphical user interface for genetic association analysis.

Science.gov (United States)

Carter, Kim W; McCaskie, Pamela A; Palmer, Lyle J

2008-12-25

Researchers wishing to conduct genetic association analysis involving single nucleotide polymorphisms (SNPs) or haplotypes are often confronted with the lack of user-friendly graphical analysis tools, requiring sophisticated statistical and informatics expertise to perform relatively straightforward tasks. Tools, such as the SimHap package for the R statistics language, provide the necessary statistical operations to conduct sophisticated genetic analysis, but lacks a graphical user interface that allows anyone but a professional statistician to effectively utilise the tool. We have developed SimHap GUI, a cross-platform integrated graphical analysis tool for conducting epidemiological, single SNP and haplotype-based association analysis. SimHap GUI features a novel workflow interface that guides the user through each logical step of the analysis process, making it accessible to both novice and advanced users. This tool provides a seamless interface to the SimHap R package, while providing enhanced functionality such as sophisticated data checking, automated data conversion, and real-time estimations of haplotype simulation progress. SimHap GUI provides a novel, easy-to-use, cross-platform solution for conducting a range of genetic and non-genetic association analyses. This provides a free alternative to commercial statistics packages that is specifically designed for genetic association analysis.

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation

International Nuclear Information System (INIS)

Scherf, Christian; Moog, Jussi; Licher, Joerg; Kara, Eugen; Roedel, Claus; Ramm, Ulla; Peter, Christiane; Zink, Klemens

2009-01-01

Background: Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. Material and Methods: The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm 3 thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. Results: The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm 2 because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Conclusion: Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector. (orig.)

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation.

Science.gov (United States)

Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla

2009-08-01

Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.

Ground-Penetrating-Radar Profiles of Interior Alaska Highways: Interpretation of Stratified Fill, Frost Depths, Water Table, and Thaw Settlement over Ice-Rich Permafrost

Science.gov (United States)

2016-08-01

along either massive ice surfaces or within sections of segregated ice. The uninsulated ice surface at Tok in Figure 17B is irregular. All of the...ER D C/ CR RE L TR -1 6- 14 ERDC’s Center-Directed Research Program Ground -Penetrating-Radar Profiles of Interior Alaska Highways...August 2016 Ground -Penetrating-Radar Profiles of Interior Alaska Highways Interpretation of Stratified Fill, Frost Depths, Water Table, and Thaw

Subcellular boron and fluorine distributions with SIMS ion microscopy in BNCT and cancer research

Energy Technology Data Exchange (ETDEWEB)

Subhash Chandra

2008-05-30

The development of a secondary ion mass spectrometry (SIMS) based technique of Ion Microscopy in boron neutron capture therapy (BNCT) was the main goal of this project, so that one can study the subcellular location of boron-10 atoms and their partitioning between the normal and cancerous tissue. This information is fundamental for the screening of boronated drugs appropriate for neutron capture therapy of cancer. Our studies at Cornell concentrated mainly on studies of glioblastoma multiforme (GBM). The early years of the grant were dedicated to the development of cryogenic methods and correlative microscopic approaches so that a reliable subcellular analysis of boron-10 atoms can be made with SIMS. In later years SIMS was applied to animal models and human tissues of GBM for studying the efficacy of potential boronated agents in BNCT. Under this grant the SIMS program at Cornell attained a new level of excellence and collaborative SIMS studies were published with leading BNCT researchers in the U.S.

Subcellular boron and fluorine distributions with SIMS ion microscopy in BNCT and cancer research

International Nuclear Information System (INIS)

Subhash, Chandra

2008-01-01

The development of a secondary ion mass spectrometry (SIMS) based technique of Ion Microscopy in boron neutron capture therapy (BNCT) was the main goal of this project, so that one can study the subcellular location of boron-10 atoms and their partitioning between the normal and cancerous tissue. This information is fundamental for the screening of boronated drugs appropriate for neutron capture therapy of cancer. Our studies at Cornell concentrated mainly on studies of glioblastoma multiforme (GBM). The early years of the grant were dedicated to the development of cryogenic methods and correlative microscopic approaches so that a reliable subcellular analysis of boron-10 atoms can be made with SIMS. In later years SIMS was applied to animal models and human tissues of GBM for studying the efficacy of potential boronated agents in BNCT. Under this grant the SIMS program at Cornell attained a new level of excellence and collaborative SIMS studies were published with leading BNCT researchers in the U.S.

National Coral Reef Monitoring Program: Shallow Water Conductivity-Temperature-Depth (CTD) Profiles for selected locations across the Hawaiian Archipelago in 2013 (NCEI Accession 0161327)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — Near-shore shallow water Conductivity-Temperature-Depth (CTD) surveys provided vertical profiles of temperature, salinity, and turbidity providing indications for...

A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se2

International Nuclear Information System (INIS)

Rodriguez-Alvarez, H.; Mainz, R.; Sadewasser, S.

2014-01-01

We present a one-dimensional Fickian model that predicts the formation of a double Ga gradient during the fabrication of Cu(In,Ga)Se 2 thin films by three-stage thermal co-evaporation. The model is based on chemical reaction equations, structural data, and effective Ga diffusivities. In the model, the Cu(In,Ga)Se 2 surface is depleted from Ga during the deposition of Cu-Se in the second deposition stage, leading to an accumulation of Ga near the back contact. During the third deposition stage, where In-Ga-Se is deposited at the surface, the atomic fluxes within the growing layer are inverted. This results in the formation of a double Ga gradient within the Cu(In,Ga)Se 2 layer and reproduces experimentally observed Ga distributions. The final shape of the Ga depth profile strongly depends on the temperatures, times and deposition rates used. The model is used to evaluate possible paths to flatten the marked Ga depth profile that is obtained when depositing at low substrate temperatures. We conclude that inserting Ga during the second deposition stage is an effective way to achieve this.

Investigation of the deuterium solubility in niobium using secondary ion mass spectrometry (SIMS)

International Nuclear Information System (INIS)

Zuechner, H.; Bruening, T.

1991-01-01

From SIMS measurements on deuterium charged niobium foils a pressure-composition isotherm was obtained. The plateau pressure of the α-β-two-phase region is in good agreement with that known from electrochemical p-n isotherm measurements. The solubility in the homogeneous α-phase measured by SIMS, however, is enhanced compared with the electrochemical p-n isotherm, i.e. the homogeneous α-phase is broadened. These results are due to the ion bombardment causing a lattice distortion within the near surface region during the SIMS experiment. (orig.)

Imaging and differentiation of mouse embryo tissues by ToF-SIMS

Energy Technology Data Exchange (ETDEWEB)

Wu, L; Lu, X; Kulp, K; Knize, M; Berman, E; Nelson, E; Felton, J; Wu, K J

2006-06-16

Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) equipped with a gold ion gun was used to image mouse embryos and differentiate tissue types (brain, spinal cord, skull, rib, heart and liver). Embryos were paraffin-embedded and then de-paraffinized. The robustness and repeatability of the method was determined by analyzing nine tissue slices from three different embryos over a period of several weeks. Using Principal Component Analysis (PCA) to reduce the spectral data generated by ToF-SIMS, histopathologically identified tissue types of the mouse embryos can be differentiated based on the characteristic differences in their mass spectra. These results demonstrate the ability of ToF-SIMS to determine subtle chemical differences even in fixed histological specimens.

Chemical weathering of a marine terrace chronosequence, Santa Cruz, California I: Interpreting rates and controls based on soil concentration-depth profiles

Science.gov (United States)

White, A.F.; Schulz, M.S.; Vivit, D.V.; Blum, A.E.; Stonestrom, David A.; Anderson, S.P.

2008-01-01

The spatial and temporal changes in element and mineral concentrations in regolith profiles in a chronosequence developed on marine terraces along coastal California are interpreted in terms of chemical weathering rates and processes. In regoliths up to 15 m deep and 226 kyrs old, quartz-normalized mass transfer coefficients indicate non-stoichiometric preferential release of Sr > Ca > Na from plagioclase along with lesser amounts of K, Rb and Ba derived from K-feldspar. Smectite weathering results in the loss of Mg and concurrent incorporation of Al and Fe into secondary kaolinite and Fe-oxides in shallow argillic horizons. Elemental losses from weathering of the Santa Cruz terraces fall within the range of those for other marine terraces along the Pacific Coast of North America. Residual amounts of plagioclase and K-feldspar decrease with terrace depth and increasing age. The gradient of the weathering profile bs is defined by the ratio of the weathering rate, R to the velocity at which the profile penetrates into the protolith. A spreadsheet calculator further refines profile geometries, demonstrating that the non-linear regions at low residual feldspar concentrations at shallow depth are dominated by exponential changes in mineral surface-to-volume ratios and at high residual feldspar concentrations, at greater depth, by the approach to thermodynamic saturation. These parameters are of secondary importance to the fluid flux qh, which in thermodynamically saturated pore water, controls the weathering velocity and mineral losses from the profiles. Long-term fluid fluxes required to reproduce the feldspar weathering profiles are in agreement with contemporary values based on solute Cl balances (qh = 0.025-0.17 m yr-1). During saturation-controlled and solute-limited weathering, the greater loss of plagioclase relative to K-feldspar is dependent on the large difference in their respective solubilities instead of the small difference between their respective

Depth profile distribution of Cr, Cu, Co, Ni and Pb in the sediment cores of Mumbai Harbour Bay

International Nuclear Information System (INIS)

Madhuparna, D.; Hemalatha, P.; Raj, Sanu S.; Jha, S.K.; Tripathi, R.M.

2014-01-01

Estuarine and coastal sediments act as ultimate sink for trace metals that are discharged into the aquatic environment. Sources of environmental contaminants to the coastal system are numerous and may enter the estuarine environment via a number of pathways Mumbai Harbour Bay on the western coast of India, receives low level nuclear wastes and industrial and domestic sewage waste from the surrounding dwellings. Also, the bay is extensively exploited for various other local activities. The present study was carried out in the bay sediment cores to investigate the depth profile distribution of trace element concentration. Biologically significant toxic elements such as Cr, Cu, Co, Ni and Pb were estimated in the sediment cores to find out pattern of distribution in the sediment bed to follow the accumulation of elements with respect to depth

WholeCellSimDB: a hybrid relational/HDF database for whole-cell model predictions.

Science.gov (United States)

Karr, Jonathan R; Phillips, Nolan C; Covert, Markus W

2014-01-01

Mechanistic 'whole-cell' models are needed to develop a complete understanding of cell physiology. However, extracting biological insights from whole-cell models requires running and analyzing large numbers of simulations. We developed WholeCellSimDB, a database for organizing whole-cell simulations. WholeCellSimDB was designed to enable researchers to search simulation metadata to identify simulations for further analysis, and quickly slice and aggregate simulation results data. In addition, WholeCellSimDB enables users to share simulations with the broader research community. The database uses a hybrid relational/hierarchical data format architecture to efficiently store and retrieve both simulation setup metadata and results data. WholeCellSimDB provides a graphical Web-based interface to search, browse, plot and export simulations; a JavaScript Object Notation (JSON) Web service to retrieve data for Web-based visualizations; a command-line interface to deposit simulations; and a Python API to retrieve data for advanced analysis. Overall, we believe WholeCellSimDB will help researchers use whole-cell models to advance basic biological science and bioengineering. http://www.wholecellsimdb.org SOURCE CODE REPOSITORY: URL: http://github.com/CovertLab/WholeCellSimDB. © The Author(s) 2014. Published by Oxford University Press.

SimWIND: A geospatial infrastructure model for optimizing wind power generation and transmission

International Nuclear Information System (INIS)

Phillips, Benjamin R.; Middleton, Richard S.

2012-01-01

Wind is a clean, enduring energy resource with the capacity to satisfy 20% or more of U.S. electricity demand. Presently, wind potential is limited by a paucity of electrical transmission lines and/or capacity between promising wind resources and primary load centers. We present the model SimWIND to address this shortfall. SimWIND is an integrated optimization model for the geospatial arrangement and cost minimization of wind-power generation–transmission–delivery infrastructure. Given a set of possible wind-farm sites, the model simultaneously determines (1) where and how much power to generate and (2) where to build new transmission infrastructure and with what capacity in order to minimize the cost for delivering a targeted amount of power to load. Costs and routing of transmission lines consider geographic and social constraints as well as electricity losses. We apply our model to the Electric Reliability Council of Texas (ERCOT) Interconnection, considering scenarios that deliver up to 20 GW of new wind power. We show that SimWIND could potentially reduce ERCOT's projected ∼$5B transmission network upgrade line length and associated costs by 50%. These results suggest that SimWIND's coupled generation–transmission–delivery modeling approach could play a critical role in enhancing planning efforts and reducing costs for wind energy integration. - Highlights: ► Wind power is limited by transmission capacity between resources and demands. ► SimWIND is a coupled generation-transmission-delivery model for wind infrastructure. ► The model minimizes costs considering realistic transmission routing and networking. ► We show that SimWIND could save 50% of $5B costs for expanding the Texas grid. ► Results suggest SimWIND may play a critical role in enhancings wind planning efforts.

Short description of PetraSim 5 with TOUGHREACT 1.2 and model structure; Kurzbeschreibung von PetraSim 5 mit TOUGHREACT 1.2 und Modellaufbau

Energy Technology Data Exchange (ETDEWEB)

Hansmeier, Christina

2014-08-15

The modeling of reactive transport processes can improve the understanding of simultaneous thermo-hydro-dynamic and geochemical processes in a repository with respect to the long-term safety analysis. The program TOUGHREACT with the user interface PetraSim is able to calculate coupled processes. It is possible to develop 1D, 2D and 3D models in porous, fissured and heterogeneous materials for non-isothermal multi-phase flows. Using modular extensions additional processes (for instance surface complexing, Pitzer parameters, salt precipitation etc.) can e taken into account. The report gives a short overview on the handling of the program PetraSim including the model structure, the settings and exemplary calculations. The application of the user interface PetraSim with THOUGHREACT 1.2 is supposed for the geochemical modeling of diffusive transport of corrosion products from waste containers within the bentonite barrier. The focus of the model will be the investigations of the porosity and permeability variations in the surrounding bentonite.

Semi-structured Interview Measure of Stigma (SIMS) in psychosis: Assessment of psychometric properties.

Science.gov (United States)

Wood, Lisa; Burke, Eilish; Byrne, Rory; Enache, Gabriela; Morrison, Anthony P

2016-10-01

Stigma is a significant difficulty for people who experience psychosis. To date, there have been no outcome measures developed to examine stigma exclusively in people with psychosis. The aim of this study was develop and validate a semi-structured interview measure of stigma (SIMS) in psychosis. The SIMS is an eleven item measure of stigma developed in consultation with service users who have experienced psychosis. 79 participants with experience of psychosis were recruited for the purposes of this study. They were administered the SIMS alongside a battery of other relevant outcome measures to examine reliability and validity. A one-factor solution was identified for the SIMS which encompassed all ten rateable items. The measure met all reliability and validity criteria and illustrated good internal consistency, inter-rater reliability, test retest reliability, criterion validity, construct validity, sensitivity to change and had no floor or ceiling effects. The SIMS is a reliable and valid measure of stigma in psychosis. It may be more engaging and acceptable than other stigma measures due to its semi-structured interview format. Crown Copyright © 2016. Published by Elsevier B.V. All rights reserved.

Water in Earth's mantle: Hydrogen analysis of mantle olivine, pyroxenes and garnet using the SIMS

Science.gov (United States)

Kurosawa, Masanori; Yurimoto, Hisayoshi; Sueno, Shigeho

1993-01-01

Hydrogen (or water) in the Earth's interior plays a key role in the evolution and dynamics of the planet. However, the abundance and the existence form of the hydrogen have scarcely been clear in practice. Hydrogen in the mantle was incorporated in the interior during the formation of the Earth. The incorporated hydrogen was hardly possible to concentrate locally inside the Earth considering its high mobility and high reactivity. The hydrogen, preferably, could be distributed homogeneously over the mantle and the core by the subsequent physical and chemical processes. Therefore, hydrogen in the mantle could be present in the form of trace hydrogen in nominally anhydrous mantle minerals. The hydrogen and the other trace elements in mantle olivines, orthopyroxenes, clinopyroxenes, and garnets were determined using secondary ion mass spectrometry (SIMS) for elucidating (1) the exact hydrogen contents, (2) the correlation between the hydrogen and the other trace elements, (3) the dependence of the hydrogen contents on the depth, and (4) the dependence of the whole rock water contents on the depth.

New Professional Profiles and Skills in the Journalistic Field: A Scoping Review and In-Depth Interviews with Professionals in Spain

Directory of Open Access Journals (Sweden)

Paula Marques-Hayasaki

2016-12-01

Full Text Available The professional profiles and skills related to journalism are adapting to a new paradigm as a consequence of the advent of new technologies - the web 2.0, the end of the monopoly of news production by mass media, etc. This study aims to provide a comprehensive critical mapping of new professional profiles and skills demanded in the field of journalism, based on a scoping review and in-depth interviews with professionals and academics in Spain. The results show a great variety of new profiles and nomenclatures. This is in part because of a significant overlapping in the functions emphasized by them. With regards to skills, the traditional ones are still the most valued by the market, although new competencies are becoming more and more important.

Beating the numbers through strategic intervention materials (SIMs): Innovative science teaching for large classes

Science.gov (United States)

Alboruto, Venus M.

2017-05-01

The study aimed to find out the effectiveness of using Strategic Intervention Materials (SIMs) as an innovative teaching practice in managing large Grade Eight Science classes to raise the performance of the students in terms of science process skills development and mastery of science concepts. Utilizing experimental research design with two groups of participants, which were purposefully chosen, it was obtained that there existed a significant difference in the performance of the experimental and control groups based on actual class observation and written tests on science process skills with a p-value of 0.0360 in favor of the experimental class. Further, results of written pre-test and post-test on science concepts showed that the experimental group with the mean of 24.325 (SD =3.82) performed better than the control group with the mean of 20.58 (SD =4.94), with a registered p-value of 0.00039. Therefore, the use of SIMs significantly contributed to the mastery of science concepts and the development of science process skills. Based on the findings, the following recommendations are offered: 1. that grade eight science teachers should use or adopt the SIMs used in this study to improve their students' performance; 2. training-workshop on developing SIMs must be conducted to help teachers develop SIMs to be used in their classes; 3. school administrators must allocate funds for the development and reproduction of SIMs to be used by the students in their school; and 4. every division should have a repository of SIMs for easy access of the teachers in the entire division.

Simulation-Based e-Learning Tools for Science,Engineering, and Technology Education(SimBeLT)

Science.gov (United States)

Davis, Doyle V.; Cherner, Y.

2006-12-01

The focus of Project SimBeLT is the research, development, testing, and dissemination of a new type of simulation-based integrated e-learning set of modules for two-year college technical and engineering curricula in the areas of thermodynamics, fluid physics, and fiber optics that can also be used in secondary schools and four-year colleges. A collection of sophisticated virtual labs is the core component of the SimBeLT modules. These labs will be designed to enhance the understanding of technical concepts and underlying fundamental principles of these topics, as well as to master certain performance based skills online. SimBeLT software will help educators to meet the National Science Education Standard that "learning science and technology is something that students do, not something that is done to them". A major component of Project SimBeLT is the development of multi-layered technology-oriented virtual labs that realistically mimic workplace-like environments. Dynamic data exchange between simulations will be implemented and links with instant instructional messages and data handling tools will be realized. A second important goal of Project SimBeLT labs is to bridge technical skills and scientific knowledge by enhancing the teaching and learning of specific scientific or engineering subjects. SimBeLT builds upon research and outcomes of interactive teaching strategies and tools developed through prior NSF funding (http://webphysics.nhctc.edu/compact/index.html) (Project SimBeLT is partially supported by a grant from the National Science Foundation DUE-0603277)

SIMS analysis: Development and evaluation program summary

International Nuclear Information System (INIS)

Groenewold, G.S.; Appelhans, A.D.; Ingram, J.C.; Delmore, J.E.; Dahl, D.A.

1996-11-01

This report provides an overview of the ''SIMS Analysis: Development and Evaluation Program'', which was executed at the Idaho National Engineering Laboratory from mid-FY-92 to the end of FY-96. It should be noted that prior to FY-1994 the name of the program was ''In-Situ SIMS Analysis''. This report will not go into exhaustive detail regarding program accomplishments, because this information is contained in annual reports which are referenced herein. In summary, the program resulted in the design and construction of an ion trap secondary ion mass spectrometer (IT-SIMS), which is capable of the rapid analysis of environmental samples for adsorbed surface contaminants. This instrument achieves efficient secondary ion desorption by use of a molecular, massive ReO 4 - primary ion particle. The instrument manages surface charge buildup using a self-discharging principle, which is compatible with the pulsed nature of the ion trap. The instrument can achieve high selectivity and sensitivity using its selective ion storage and MS/MS capability. The instrument was used for detection of tri-n-butyl phosphate, salt cake (tank cake) characterization, and toxic metal speciation studies (specifically mercury). Technology transfer was also an important component of this program. The approach that was taken toward technology transfer was that of component transfer. This resulted in transfer of data acquisition and instrument control software in FY-94, and ongoing efforts to transfer primary ion gun and detector technology to other manufacturers

SIM-RIBRAS: A Monte-Carlo simulation package for RIBRAS system

Energy Technology Data Exchange (ETDEWEB)

Leistenschneider, E.; Lepine-Szily, A.; Lichtenthaeler, R. [Departamento de Fisica Nuclear, Instituto de Fisica, Universidade de Sao Paulo (Brazil)

2013-05-06

SIM-RIBRAS is a Root-based Monte-Carlo simulation tool designed to help RIBRAS users on experience planning and experimental setup enhancing and caracterization. It is divided into two main programs: CineRIBRAS, aiming beam kinematics, and SolFocus, aiming beam optics. SIM-RIBRAS replaces other methods and programs used in the past, providing more complete and accurate results and requiring much less manual labour. Moreover, the user can easily make modifications in the codes, adequating it for specific requirements of an experiment.

The medical ethics of Dr J Marion Sims: a fresh look at the historical record.

Science.gov (United States)

Wall, L L

2006-06-01

Vesicovaginal fistula was a catastrophic complication of childbirth among 19th century American women. The first consistently successful operation for this condition was developed by Dr J Marion Sims, an Alabama surgeon who carried out a series of experimental operations on black slave women between 1845 and 1849. Numerous modern authors have attacked Sims's medical ethics, arguing that he manipulated the institution of slavery to perform ethically unacceptable human experiments on powerless, unconsenting women. This article reviews these allegations using primary historical source material and concludes that the charges that have been made against Sims are largely without merit. Sims's modern critics have discounted the enormous suffering experienced by fistula victims, have ignored the controversies that surrounded the introduction of anaesthesia into surgical practice in the middle of the 19th century, and have consistently misrepresented the historical record in their attacks on Sims. Although enslaved African American women certainly represented a "vulnerable population" in the 19th century American South, the evidence suggests that Sims's original patients were willing participants in his surgical attempts to cure their affliction-a condition for which no other viable therapy existed at that time.

Detecting feigned postconcussional and posttraumatic stress symptoms with the structured inventory of malingered symptomatology (SIMS).

Science.gov (United States)

Parks, Adam C; Gfeller, Jeffrey; Emmert, Natalie; Lammert, Hannah

2017-01-01

The Structured Inventory of Malingered Symptomatology (SIMS) is a standalone symptom validity test (SVT) designed as a screening measure to detect a variety of exaggerated psychological symptoms. A number of studies have explored the accuracy of the SIMS in litigious and clinical populations, yet few have examined the validity of the SIMS in detecting feigned symptoms of postconcussional disorder (PCD) and posttraumatic stress disorder (PTSD). The present study examined the sensitivity of the SIMS in detecting undergraduate simulators (N = 78) feigning symptoms of PCD, PTSD, and the comorbid presentation of both PCD and PTSD symptomatologies. Overall, the SIMS Total score produced the highest sensitivities for the PCD symptoms and PCD+PTSD symptoms groups (.89 and .85, respectively), and to a lesser extent, the PTSD symptoms group (.69). The Affective Disorders (AF) subscale was most sensitive to the PTSD symptoms group compared to the PCD and PCD+PTSD symptoms groups. Additional sensitivity values are presented and examined at multiple scale cutoff scores. These findings support the use of the SIMS as a SVT screening measure for PCD and PTSD symptom exaggeration in neuropsychological assessment.

Direct infusion-SIM as fast and robust method for absolute protein quantification in complex samples

Directory of Open Access Journals (Sweden)

Christina Looße

2015-06-01

Full Text Available Relative and absolute quantification of proteins in biological and clinical samples are common approaches in proteomics. Until now, targeted protein quantification is mainly performed using a combination of HPLC-based peptide separation and selected reaction monitoring on triple quadrupole mass spectrometers. Here, we show for the first time the potential of absolute quantification using a direct infusion strategy combined with single ion monitoring (SIM on a Q Exactive mass spectrometer. By using complex membrane fractions of Escherichia coli, we absolutely quantified the recombinant expressed heterologous human cytochrome P450 monooxygenase 3A4 (CYP3A4 comparing direct infusion-SIM with conventional HPLC-SIM. Direct-infusion SIM revealed only 14.7% (±4.1 (s.e.m. deviation on average, compared to HPLC-SIM and a decreased processing and analysis time of 4.5 min (that could be further decreased to 30 s for a single sample in contrast to 65 min by the LC–MS method. Summarized, our simplified workflow using direct infusion-SIM provides a fast and robust method for quantification of proteins in complex protein mixtures.

CystiSim - An Agent-Based Model for Taenia solium Transmission and Control.

Science.gov (United States)

Braae, Uffe Christian; Devleesschauwer, Brecht; Gabriël, Sarah; Dorny, Pierre; Speybroeck, Niko; Magnussen, Pascal; Torgerson, Paul; Johansen, Maria Vang

2016-12-01

Taenia solium taeniosis/cysticercosis was declared eradicable by the International Task Force for Disease Eradication in 1993, but remains a neglected zoonosis. To assist in the attempt to regionally eliminate this parasite, we developed cystiSim, an agent-based model for T. solium transmission and control. The model was developed in R and available as an R package (http://cran.r-project.org/package=cystiSim). cystiSim was adapted to an observed setting using field data from Tanzania, but adaptable to other settings if necessary. The model description adheres to the Overview, Design concepts, and Details (ODD) protocol and consists of two entities-pigs and humans. Pigs acquire cysticercosis through the environment or by direct contact with a tapeworm carrier's faeces. Humans acquire taeniosis from slaughtered pigs proportional to their infection intensity. The model allows for evaluation of three interventions measures or combinations hereof: treatment of humans, treatment of pigs, and pig vaccination, and allows for customary coverage and efficacy settings. cystiSim is the first agent-based transmission model for T. solium and suggests that control using a strategy consisting of an intervention only targeting the porcine host is possible, but that coverage and efficacy must be high if elimination is the ultimate goal. Good coverage of the intervention is important, but can be compensated for by including an additional intervention targeting the human host. cystiSim shows that the scenarios combining interventions in both hosts, mass drug administration to humans, and vaccination and treatment of pigs, have a high probability of success if coverage of 75% can be maintained over at least a four year period. In comparison with an existing mathematical model for T. solium transmission, cystiSim also includes parasite maturation, host immunity, and environmental contamination. Adding these biological parameters to the model resulted in new insights in the potential

LandSIM3D: modellazione in real time 3D di dati geografici

Directory of Open Access Journals (Sweden)

Lambo Srl Lambo Srl

2009-03-01

Full Text Available LandSIM3D: realtime 3D modelling of geographic data LandSIM3D allows to model in 3D an existing landscape in a few hours only and geo-referenced offering great landscape analysis and understanding tools. 3D projects can then be inserted into the existing landscape with ease and precision. The project alternatives and impact can then be visualized and studied into their immediate environmental. The complex evolution of the landscape in the future can also be simulated and the landscape model can be manipulated interactively and better shared with colleagues. For that reason, LandSIM3D is different from traditional 3D imagery solutions, normally reserved for computer graphics experts. For more information about LandSIM3D, go to www.landsim3d.com.

Design and co-simulation of depth estimation using simulink HDL coder and modelsim

International Nuclear Information System (INIS)

Memon, F.; Memon, A.H.; Talpur, S.N.

2016-01-01

In this paper a novel VHDL design procedure of depth estimation algorithm using HDL (Hardware Description Language) Coder is presented. A framework is developed that takes depth estimation algorithm described in MATLAB as input and generates VHDL code, which dramatically decreases the time required to implement an application on FPGAs (Field Programmable Gate Arrays). In the first phase, design is carried out in MATLAB. Using HDL Coder, MATLAB floating- point design is converted to an efficient fixed-point design and generated VHDL Code and test-bench from fixed point MATLAB code. Further, the generated VHDL code of design is verified with co-simulation using Mentor Graphic ModelSim 10.3d software. Simulation results are presented which indicate that VHDL simulations match with the MATLAB simulations and confirm the efficiency of presented methodology. (author)

Confocal Raman Microspectroscopy: The Measurement of VX Depth Profiles in Hairless Guinea Pig Skin and the Evaluation of RSDL

Science.gov (United States)

2015-02-01

USAMRICD-TR-15-01 Confocal Raman Microspectroscopy: The Measurement of VX Depth Profiles in Hairless Guinea Pig Skin and the Evaluation...5a. CONTRACT NUMBER guinea pig skin and the evaluation of RSDL 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Braue, EH...upper skin layers of hairless guinea pigs and to determine the ability of Reactive Skin Decontamination Lotion (RSDL) to remove or degrade VX from

ToF-SIMS observation for evaluating the interaction between amyloid β and lipid membranes.

Science.gov (United States)

Aoyagi, Satoka; Shimanouchi, Toshinori; Kawashima, Tomoko; Iwai, Hideo

2015-04-01

The adsorption behaviour of amyloid beta (Aβ), thought to be a key peptide for understanding Alzheimer's disease, was investigated by means of time-of-flight secondary ion mass spectrometry (ToF-SIMS). Aβ aggregates depending on the lipid membrane condition though it has not been fully understood yet. In this study, Aβ samples on different lipid membranes, 1,2-dipalmitoyl-sn-glycero-3-phosphocholine (DPPC), 1,2-dimyristoyl-sn-glycero-3-phosphocholine (DMPC) and 1,2-dioleoyl-sn-glycero-3-phosphocholine (DOPC), were observed with ToF-SIMS and the complex ToF-SIMS data of the Aβ samples was interpreted using data analysis techniques such as principal component analysis (PCA), gentle-SIMS (G-SIMS) and g-ogram. DOPC and DMPC are liquid crystal at room temperature, while DPPC is gel at room temperature. As primary ion beams, Bi3(+) and Ar cluster ion beams were used and the effect of an Ar cluster ion for evaluating biomolecules was also studied. The secondary ion images of the peptide fragment ions indicated by G-SIMS and g-ogram were consistent with the PCA results. It is suggested that Aβ is adsorbed homogeneously on the liquid-crystalline-phase lipid membranes, while it aggregates along the lipid on the gel-phase lipid membrane. Moreover, in the results using the Ar cluster, the influence of contamination was reduced.

Monte Carlo simulation and scatter correction of the GE Advance PET scanner with SimSET and Geant4

International Nuclear Information System (INIS)

Barret, Olivier; Carpenter, T Adrian; Clark, John C; Ansorge, Richard E; Fryer, Tim D

2005-01-01

For Monte Carlo simulations to be used as an alternative solution to perform scatter correction, accurate modelling of the scanner as well as speed is paramount. General-purpose Monte Carlo packages (Geant4, EGS, MCNP) allow a detailed description of the scanner but are not efficient at simulating voxel-based geometries (patient images). On the other hand, dedicated codes (SimSET, PETSIM) will perform well for voxel-based objects but will be poor in their capacity of simulating complex geometries such as a PET scanner. The approach adopted in this work was to couple a dedicated code (SimSET) with a general-purpose package (Geant4) to have the efficiency of the former and the capabilities of the latter. The combined SimSET+Geant4 code (SimG4) was assessed on the GE Advance PET scanner and compared to the use of SimSET only. A better description of the resolution and sensitivity of the scanner and of the scatter fraction was obtained with SimG4. The accuracy of scatter correction performed with SimG4 and SimSET was also assessed from data acquired with the 20 cm NEMA phantom. SimG4 was found to outperform SimSET and to give slightly better results than the GE scatter correction methods installed on the Advance scanner (curve fitting and scatter modelling for the 300-650 keV and 375-650 keV energy windows, respectively). In the presence of a hot source close to the edge of the field of view (as found in oxygen scans), the GE curve-fitting method was found to fail whereas SimG4 maintained its performance

Pattern and intensity of human impact on coral reefs depend on depth along the reef profile and on the descriptor adopted

Science.gov (United States)

Nepote, Ettore; Bianchi, Carlo Nike; Chiantore, Mariachiara; Morri, Carla; Montefalcone, Monica

2016-09-01

Coral reefs are threatened by multiple global and local disturbances. The Maldives, already heavily hit by the 1998 mass bleaching event, are currently affected also by growing tourism and coastal development that may add to global impacts. Most of the studies investigating effects of local disturbances on coral reefs assessed the response of communities along a horizontal distance from the impact source. This study investigated the status of a Maldivian coral reef around an island where an international touristic airport has been recently (2009-2011) built, at different depths along the reef profile (5-20 m depth) and considering the change in the percentage of cover of five different non-taxonomic descriptors assessed through underwater visual surveys: hard corals, soft corals, other invertebrates, macroalgae and abiotic attributes. Eight reefs in areas not affected by any coastal development were used as controls and showed a reduction of hard coral cover and an increase of abiotic attributes (i.e. sand, rock, coral rubble) at the impacted reef. However, hard coral cover, the most widely used descriptor of coral reef health, was not sufficient on its own to detect subtle indirect effects that occurred down the reef profile. Selecting an array of descriptors and considering different depths, where corals may find a refuge from climate impacts, could guide the efforts of minimising local human pressures on coral reefs.

Retention of data in heat-damaged SIM cards and potential recovery methods.

Science.gov (United States)

Jones, B J; Kenyon, A J

2008-05-02

Examination of various SIM cards and smart card devices indicates that data may be retained in SIM card memory structures even after heating to temperatures up to 450 degrees C, which the National Institute of Standards and Technology (NIST) has determined to be approximately the maximum average sustained temperature at desk height in a house fire. However, in many cases, and certainly for temperatures greater than 450 degrees C, the SIM card chip has suffered structural or mechanical damage that renders simple probing or rewiring ineffective. Nevertheless, this has not necessarily affected the data, which is stored as charge in floating gates, and alternative methods for directly accessing the stored charge may be applicable.

Application of secondary ions mass spectrometry (SIMS) in studies of internal contamination

International Nuclear Information System (INIS)

Amaral, Ademir; Galle, Pierre; Colas-Linhart, Nicole

2000-01-01

Secondary Ion Mass Spectrometry (SIMS) permits the detection of stable and radioactive nuclides. Based on the ablation of specimens by ion bombardment this mass spectrometry method allows a rapid assessment of trace elements in biological samples. Its resolving mass power provides an efficient analytical method and, in particular, it makes possible accurate isotopic ratio determination. In this work, the application of SIMS has been investigated in studies of internal contamination. In vivo studies were carried out using duodenal tissue sections from rats contaminated with cerium. Tests were performed to localize this element as a result of the contamination. In this report, analytical procedures and the potential of SIMS in biological research are presented and discussed. (author)

TOF-SIMS investigation of degradation pathways occurring in a variety of organic photovoltaic devices – the ISOS-3 inter-laboratory collaboration

DEFF Research Database (Denmark)

Andreasen, Birgitta; Tanenbaum, David; Hermenau, Martin

2012-01-01

-depth in the organic solar cells. Various degradation mechanisms were investigated and correlated with cell performance. For example, photo-oxidation of the active material was quantitatively studied as a function of cell performance. The large variety of cell architectures used (some with and some without......-destructive and destructive techniques in order to identify specific degradation mechanisms responsible for the deterioration of the photovoltaic response. Work presented herein involves time-of-flight secondary ion mass spectrometry (TOF-SIMS) in order to study chemical degradation in-plane as well as in...... of organic solar cells....

Observation of endoplasmic reticulum tubules via TOF-SIMS tandem mass spectrometry imaging of transfected cells.

Science.gov (United States)

Chini, Corryn E; Fisher, Gregory L; Johnson, Ben; Tamkun, Michael M; Kraft, Mary L

2018-02-26

Advances in three-dimensional secondary ion mass spectrometry (SIMS) imaging have enabled visualizing the subcellular distributions of various lipid species within individual cells. However, the difficulty of locating organelles using SIMS limits efforts to study their lipid compositions. Here, the authors have assessed whether endoplasmic reticulum (ER)-Tracker Blue White DPX ® , which is a commercially available stain for visualizing the endoplasmic reticulum using fluorescence microscopy, produces distinctive ions that can be used to locate the endoplasmic reticulum using SIMS. Time-of-flight-SIMS tandem mass spectrometry (MS 2 ) imaging was used to identify positively and negatively charged ions produced by the ER-Tracker stain. Then, these ions were used to localize the stain and thus the endoplasmic reticulum, within individual human embryonic kidney cells that contained higher numbers of endoplasmic reticulum-plasma membrane junctions on their surfaces. By performing MS 2 imaging of selected ions in parallel with the precursor ion (MS 1 ) imaging, the authors detected a chemical interference native to the cell at the same nominal mass as the pentafluorophenyl fragment from the ER-Tracker stain. Nonetheless, the fluorine secondary ions produced by the ER-Tracker stain provided a distinctive signal that enabled locating the endoplasmic reticulum using SIMS. This simple strategy for visualizing the endoplasmic reticulum in individual cells using SIMS could be combined with existing SIMS methodologies for imaging intracellular lipid distribution and to study the lipid composition within the endoplasmic reticulum.

Contribution to depth profiling by particle induced X-ray emission application to the study of zinc diffusion in AgZn alloy

International Nuclear Information System (INIS)

Frontier, J.P.

1987-08-01

A contribution of the study of the capacities of Particle Induced X-ray Emission (P.I.X.E.) for depth profiling, in the range of 1 to 10 micrometers and over, is presented here. It is shown that, in a non destructuve way, the concentration profile of a given element can be obtained, in principle, by deconvoluting the X-ray yields of this element, measured in a set of experiments in which the energy of the impinging protons, hence their range, is systematically varied. Direct deconvolution procedure, which leads to the inversion of an ill-conditionned matrix is unsuitable. So we generalized the iterative procedure previously used by Vegh to solve a similar problem. Alternatively we also used a fitting procedure of several parameters which gave us somewhat better than those of the iterative procedure. Both algorithms where applied to a set of X-ray yields induced by protons of energy between 0.45 to 2 MeV, corresponding to the first 6 micrometers of various depletion profiles of zinc in an initially homogeneous Ag-3 at % Zn annealed under vacuum. For investigation of deeper layers, a sectionning technique which consists in analysing thin film hydroxide targets by specific chemistry of tiny turning, was developped with success. Cross-reference of all the obtained profiles was made with electron microprobe determination on transverse section, and with the predictions of the theory of atomic diffusion. In addition, the possibilities of increasing the depth resolution by developping techniques either of controled sanding of the surface, or analysis of the sample is discussed [fr

tms-sim - Timing Models Scheduling Simulation Framework: Release 2014-12