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Sample records for simple soi technology

  1. Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

    International Nuclear Information System (INIS)

    Aliane, A.; Agnese, P.; Pigot, C.; Sauvageot, J.-L.; Moro, F. de; Ribot, H.; Gasse, A.; Szeflinski, V.; Gobil, Y.

    2008-01-01

    Several successful development programs have been conducted on infra-red bolometer arrays at the 'Commissariat a l'Energie Atomique' (CEA-LETI Grenoble) in collaboration with the CEA-SAp (Saclay); taking advantage of this background, we are now developing an X-ray spectro-imaging camera for next generation space astronomy missions, using silicon only technology. We have developed monolithic silicon micro-calorimeters based on implanted thermistors in an improved array that could be used for future space missions. The 8x8 array consists of a grid of 64 suspended pixels fabricated on a silicon on insulator (SOI) wafer. Each pixel of this detector array is made of a tantalum (Ta) absorber, which is bound by means of indium bump hybridization, to a silicon thermistor. The absorber array is bound to the thermistor array in a collective process. The fabrication process of our detector involves a combination of standard technologies and silicon bulk micro-machining techniques, based on deposition, photolithography and plasma etching steps. Finally, we present the results of measurements performed on these four primary building blocks that are required to create a detector array up to 32x32 pixels in size

  2. Technology development for SOI monolithic pixel detectors

    International Nuclear Information System (INIS)

    Marczewski, J.; Domanski, K.; Grabiec, P.; Grodner, M.; Jaroszewicz, B.; Kociubinski, A.; Kucharski, K.; Tomaszewski, D.; Caccia, M.; Kucewicz, W.; Niemiec, H.

    2006-01-01

    A monolithic detector of ionizing radiation has been manufactured using silicon on insulator (SOI) wafers with a high-resistivity substrate. In our paper the integration of a standard 3 μm CMOS technology, originally designed for bulk devices, with fabrication of pixels in the bottom wafer of a SOI substrate is described. Both technological sequences have been merged minimizing thermal budget and providing suitable properties of all the technological layers. The achieved performance proves that fully depleted monolithic active pixel matrix might be a viable option for a wide spectrum of future applications

  3. Automotive SOI-BCD Technology Using Bonded Wafers

    International Nuclear Information System (INIS)

    Himi, H.; Fujino, S.

    2008-01-01

    The SOI-BCD device is excelling in high temperature operation and noise immunity because the integrated elements can be electrically separated by dielectric isolation. We have promptly paid attention to this feature and have concentrated to develop SOI-BCD devices seeking to match the automotive requirement. In this paper, the feature technologies specialized for automotive SOI-BCD devices, such as buried N + layer for impurity gettering and noise shielding, LDMOS with improved ESD robustness, crystal defect-less process, and wafer direct bonding through the amorphous layer for intelligent power IC are introduced.

  4. SOI technology for power management in automotive and industrial applications

    Science.gov (United States)

    Stork, Johannes M. C.; Hosey, George P.

    2017-02-01

    Semiconductor on Insulator (SOI) technology offers an assortment of opportunities for chip manufacturers in the Power Management market. Recent advances in the automotive and industrial markets, along with emerging features, the increasing use of sensors, and the ever-expanding "Internet of Things" (IoT) are providing for continued growth in these markets while also driving more complex solutions. The potential benefits of SOI include the ability to place both high-voltage and low-voltage devices on a single chip, saving space and cost, simplifying designs and models, and improving performance, thereby cutting development costs and improving time to market. SOI also offers novel new approaches to long-standing technologies.

  5. Towards Polarization Diversity on the SOI Platform With Simple Fabrication Process

    DEFF Research Database (Denmark)

    Ding, Yunhong; Liu, Liu; Peucheret, Christophe

    2011-01-01

    We present a polarization diversity circuit built on the silicon-on-insulator (SOI) platform, which can be fabricated by a simple process. The polarization diversity is based on two identical air-clad asymmetrical directional couplers, which simultaneously play the roles of polarization splitter...... and rotator. A silicon polarization diversity circuit with a single microring resonator is fabricated on the SOI platform. Only ${1-dB polarization-dependent loss is demonstrated. A significant improvement of the polarization dependence is obtained for 20-Gb/s nonreturn-to-zero differential phase-shift keying...

  6. Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

    International Nuclear Information System (INIS)

    Yu Xiaomei; Tang Yaquan; Zhang Haitao

    2008-01-01

    This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

  7. Scaling limits and reliability of SOI CMOS technology

    International Nuclear Information System (INIS)

    Ioannou, D E

    2005-01-01

    As bulk and PD-SOI CMOS approach their scaling limit (at gate length of around 50 nm), there is a renewed interest on FD-SOI because of its potential for continued scalability beyond this limit. In this review the performance and reliability of extremely scaled FD transistors are discussed and an attempt is made to identify critical areas for further research. (invited paper)

  8. Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks

    Science.gov (United States)

    Dogan, Numan S.

    2003-01-01

    The objective of this work is to design and develop Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks. We briefly report on the accomplishments in this work. We also list the impact of this work on graduate student research training/involvement.

  9. Special Issue: Planar Fully-Depleted SOI technology

    Science.gov (United States)

    Allibert, F.; Hiramoto, T.; Nguyen, B. Y.

    2016-03-01

    We are in the era of mobile computing with smart handheld devices and remote data storage "in the cloud," with devices that are almost always on and driven by needs of high data transmission rate, instant access/connection and long battery life. With all the ambitious requirements for better performance with lower power consumption, the SoC solution must also be cost-effective in order to capture the large, highly-competitive consumer mobile and wearable markets. The Fully-Depleted SOI device/circuit is a unique option that can satisfy all these requirements and has made tremendous progress in development for various applications and adoption by foundries, integrated device manufacturers (IDM), and fabless companies in the last 3 years.

  10. A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology

    CERN Multimedia

    2002-01-01

    % RD-9 A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology \\\\ \\\\Radiation hardened SOI-CMOS (Silicon-On-Insulator, Complementary Metal-Oxide- \\linebreak Semiconductor planar microelectronic circuit technology) was a likely candidate technology for mixed analog-digital signal processing electronics in experiments at the future high luminosity hadron colliders. We have studied the analog characteristics of circuit designs realized in the Thomson TCS radiation hard technologies HSOI3-HD. The feature size of this technology was 1.2 $\\mu$m. We have irradiated several devices up to 25~Mrad and 3.10$^{14}$ neutrons cm$^{-2}$. Gain, noise characteristics and speed have been measured. Irradiation introduces a degradation which in the interesting bandwidth of 0.01~MHz~-~1~MHz is less than 40\\%. \\\\ \\\\Some specific SOI phenomena have been studied in detail, like the influence on the noise spectrum of series resistence in the thin silicon film that constitutes the body of the transistor...

  11. Information technology made simple

    CERN Document Server

    Carter, Roger

    1991-01-01

    Information Technology: Made Simple covers the full range of information technology topics, including more traditional subjects such as programming languages, data processing, and systems analysis. The book discusses information revolution, including topics about microchips, information processing operations, analog and digital systems, information processing system, and systems analysis. The text also describes computers, computer hardware, microprocessors, and microcomputers. The peripheral devices connected to the central processing unit; the main types of system software; application soft

  12. A monolithic pixel sensor (TRAPPISTe-2) for particle physics instrumentation in OKI 0.2μm SOI technology

    Science.gov (United States)

    Soung Yee, L.; Alvarez, P.; Martin, E.; Cortina, E.; Ferrer, C.

    2012-12-01

    A monolithic active pixel sensor for charged particle tracking has been developed within the frame of a research and development project called TRAPPISTe (Tracking Particles for Physics Instrumentation in SOI Technology). TRAPPISTe aims to study the feasibility of developing a monolithic pixel sensor with SOI technology. TRAPPISTe-2 is the second prototype in this series and was fabricated with an OKI 0.20μm fully depleted (FD-SOI) CMOS process. This device contains test transistors and amplifiers, as well as two pixel matrices with integrated 3-transistor and amplifier readout electronics. The results presented are based on the first electrical measurements performed on the test structures and laser measurements on the pixel matrices.

  13. Development of a pixel sensor with fine space-time resolution based on SOI technology for the ILC vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Ono, Shun, E-mail: s-ono@champ.hep.sci.osaka-u.ac.jp [Osaka University, 1-1 Machikaneyama, Toyonaka (Japan); Togawa, Manabu; Tsuji, Ryoji; Mori, Teppei [Osaka University, 1-1 Machikaneyama, Toyonaka (Japan); Yamada, Miho; Arai, Yasuo; Tsuboyama, Toru; Hanagaki, Kazunori [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Org. (KEK), 1-1 Oho, Tsukuba (Japan)

    2017-02-11

    We have been developing a new monolithic pixel sensor with silicon-on-insulator (SOI) technology for the International Linear Collider (ILC) vertex detector system. The SOI monolithic pixel detector is realized using standard CMOS circuits fabricated on a fully depleted sensor layer. The new SOI sensor SOFIST can store both the position and timing information of charged particles in each 20×20 μm{sup 2} pixel. The position resolution is further improved by the position weighted with the charges spread to multiple pixels. The pixel also records the hit timing with an embedded time-stamp circuit. The sensor chip has column-parallel analog-to-digital conversion (ADC) circuits and zero-suppression logic for high-speed data readout. We are designing and evaluating some prototype sensor chips for optimizing and minimizing the pixel circuit.

  14. Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

    Science.gov (United States)

    Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

    2018-02-01

    In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

  15. Characterization of pixel sensor designed in 180 nm SOI CMOS technology

    Science.gov (United States)

    Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

    2018-01-01

    A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

  16. Integrated circuits of silicon on insulator S.O.I. technologies: State of the art and perspectives

    International Nuclear Information System (INIS)

    Leray, J.L.; Dupont-Nivet, E.; Raffaelli, M.; Coic, Y.M.; Musseau, O.; Pere, J.F.; Lalande, P.; Bredy, J.; Auberton-Herve, A.J.; Bruel, M.; Giffard, B.

    1989-01-01

    Silicon On Insulator technologies have been proposed to increase the integrated circuits performances in radiation operation. Active researches are conducted, in France and abroad. This paper reviews briefly radiation effects phenomenology in that particular type of structure S.O.I. New results are presented that show very good radiation behaviour in term of speed, dose (10 to 100 megarad (Si)), dose rate and S.E.U. performances [fr

  17. Performance projections and design optimization of planar double gate SOI MOSFETs for logic technology applications

    International Nuclear Information System (INIS)

    Kranti, Abhinav; Hao Ying; Armstrong, G Alastair

    2008-01-01

    In this paper, by investigating the influence of source/drain extension region engineering (also known as gate–source/drain underlap) in nanoscale planar double gate (DG) SOI MOSFETs, we offer new insights into the design of future nanoscale gate-underlap DG devices to achieve ITRS projections for high performance (HP), low standby power (LSTP) and low operating power (LOP) logic technologies. The impact of high-κ gate dielectric, silicon film thickness, together with parameters associated with the lateral source/drain doping profile, is investigated in detail. The results show that spacer width along with lateral straggle can not only effectively control short-channel effects, thus presenting low off-current in a gate underlap device, but can also be optimized to achieve lower intrinsic delay and higher on–off current ratio (I on /I off ). Based on the investigation of on-current (I on ), off-current (I off ), I on /I off , intrinsic delay (τ), energy delay product and static power dissipation, we present design guidelines to select key device parameters to achieve ITRS projections. Using nominal gate lengths for different technologies, as recommended from ITRS specification, optimally designed gate-underlap DG MOSFETs with a spacer-to-straggle (s/σ) ratio of 2.3 for HP/LOP and 3.2 for LSTP logic technologies will meet ITRS projection. However, a relatively narrow range of lateral straggle lying between 7 to 8 nm is recommended. A sensitivity analysis of intrinsic delay, on-current and off-current to important parameters allows a comparative analysis of the various design options and shows that gate workfunction appears to be the most crucial parameter in the design of DG devices for all three technologies. The impact of back gate misalignment on I on , I off and τ is also investigated for optimized underlap devices

  18. Design and optimization of different P-channel LUDMOS architectures on a 0.18 µm SOI-CMOS technology

    International Nuclear Information System (INIS)

    Cortés, I; Toulon, G; Morancho, F; Hugonnard-Bruyere, E; Villard, B; Toren, W J

    2011-01-01

    This paper focuses on the design and optimization of different power P-channel LDMOS transistors (V BR > 120 V) to be integrated in a new generation of smart-power technology based upon a 0.18 µm SOI-CMOS technology. Different drift architectures have been envisaged in this work with the purpose of optimizing the transistor static (R on-sp /V BR trade-off) and dynamic (R on × Q g ) characteristics to improve their switching performance. Conventional single-RESURF P-channel LUDMOS architectures on thin-SOI substrates show very poor R on-sp /V BR trade-off due to their low RESURF effectiveness. Alternative drift configurations such as the addition of an N-type buried layer deep inside the SOI layer or the application of the superjunction concept by alternatively placing stacked P- and N-type pillars could highly improve the RESURF effectiveness and the P-channel device switching performance

  19. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    International Nuclear Information System (INIS)

    Dehzangi, Arash; Larki, Farhad; Naseri, Mahmud G.; Navasery, Manizheh; Majlis, Burhanuddin Y.; Razip Wee, Mohd F.; Halimah, M.K.; Islam, Md. Shabiul; Md Ali, Sawal H.; Saion, Elias

    2015-01-01

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated

  20. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    Energy Technology Data Exchange (ETDEWEB)

    Dehzangi, Arash, E-mail: arashd53@hotmail.com [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Larki, Farhad [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Naseri, Mahmud G. [Department of Physics, Faculty of Science, Malayer University, Malayer, Hamedan (Iran, Islamic Republic of); Navasery, Manizheh [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Majlis, Burhanuddin Y.; Razip Wee, Mohd F. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Halimah, M.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Islam, Md. Shabiul; Md Ali, Sawal H. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Saion, Elias [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2015-04-15

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.

  1. Development of monolithic pixel detector with SOI technology for the ILC vertex detector

    Science.gov (United States)

    Yamada, M.; Ono, S.; Tsuboyama, T.; Arai, Y.; Haba, J.; Ikegami, Y.; Kurachi, I.; Togawa, M.; Mori, T.; Aoyagi, W.; Endo, S.; Hara, K.; Honda, S.; Sekigawa, D.

    2018-01-01

    We have been developing a monolithic pixel sensor for the International Linear Collider (ILC) vertex detector with the 0.2 μm FD-SOI CMOS process by LAPIS Semiconductor Co., Ltd. We aim to achieve a 3 μm single-point resolution required for the ILC with a 20×20 μm2 pixel. Beam bunch crossing at the ILC occurs every 554 ns in 1-msec-long bunch trains with an interval of 200 ms. Each pixel must record the charge and time stamp of a hit to identify a collision bunch for event reconstruction. Necessary functions include the amplifier, comparator, shift register, analog memory and time stamp implementation in each pixel, and column ADC and Zero-suppression logic on the chip. We tested the first prototype sensor, SOFIST ver.1, with a 120 GeV proton beam at the Fermilab Test Beam Facility in January 2017. SOFIST ver.1 has a charge sensitive amplifier and two analog memories in each pixel, and an 8-bit Wilkinson-type ADC is implemented for each column on the chip. We measured the residual of the hit position to the reconstructed track. The standard deviation of the residual distribution fitted by a Gaussian is better than 3 μm.

  2. Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology

    NARCIS (Netherlands)

    Agarwal, V.; Dutta, S; Annema, AJ; Hueting, RJE; Steeneken, P.G.; Nauta, B

    2017-01-01

    This paper presents a low power monolithically integrated optical transmitter with avalanche mode light emitting diodes in a 140 nm silicon-on-insulator CMOS technology. Avalanche mode LEDs in silicon exhibit wide-spectrum electroluminescence (400 nm < λ < 850 nm), which has a significant

  3. A 6 device SOI new technology for mixed analog-digital and rad-hard applications

    International Nuclear Information System (INIS)

    Blanc, J.P.; Bonaime, J.; Delevoye, E.; Pontcharra, J. de; Gautier, J.; Truche, R.

    1993-01-01

    DMILL technology is being developed for very rad-hard analog-digital applications, such as space and military circuits or as electronics for the future generation of high energy collider (LHC, CERN, Geneva). Both CMOS and junction (JFET and bipolar) transistors are needed. A new process has been integrated, based on a 1.2μm thick silicon film on insulator (SIMOX plus epitaxy), a complete dielectric isolation and low temperature process. The mean feature is that six different components are fabricated on the same wafer, taking into account the 12 volts supply voltage constraint for some analog applications. The first electrical characteristics are presented in this paper. The optimization capabilities of such a hardened CBi-CJ-CMOS technology are discussed

  4. SOI Fully complementary BI-JFET-MOS technology for analog-digital applications with vertical BJT's

    International Nuclear Information System (INIS)

    Delevoye, E.; Blanc, J.P.; Bonaime, J.; Pontcharra, J. de; Gautier, J.; Martin, F.; Truche, R.

    1993-01-01

    A silicon-on-insulator, fully complementary, Bi-JFET-MOS technology has been developed for realizing multi-megarad hardened mixed analog-digital circuits. The six different active components plus resistors and capacitors have been successfully integrated in a 25-mask process using SIMOX substrate and 1 μm thick epitaxial layer. Different constraints such as device compatibility, complexity not higher than BiCMOS technology and breakdown voltages suitable for analog applications have been considered. Several process splits have been realized and all the characteristics presented here have been measured on the same split. P + gate is used for PMOS transistor to get N and PMOST symmetrical characteristics. Both NPN and PNP vertical bipolar transistors with poly-emitters show f T > 5 GHz. 2-separated gate JFET's need no additional mask. (authors). 9 figs., 1 tab

  5. APPLYING SIMPLE TECHNOLOGY ACCOMPLISHES VISUAL INSPECTION CHALLENGES

    International Nuclear Information System (INIS)

    Robinson, C

    2007-01-01

    This paper discusses the successful implementation of simple video technologies at the Savannah River Site (SRS) to perform complex visual inspection, monitoring, and surveillance tasks. Because SRS facilities are similar to those of an industrial plant, the environmental and accessibility considerations for remote viewing are the primary determining factors in the selection of technology. The constraints and challenges associated with remote viewing are discussed, and examples of applications are given

  6. BUSFET - A Novel Radiation-Hardened SOI Transistor

    International Nuclear Information System (INIS)

    Dodd, P.E.; Draper, B.L.; Schwank, J.R.; Shaneyfelt, M.R.

    1999-01-01

    A partially-depleted SOI transistor structure has been designed that does not require the use of specially-processed hardened buried oxides for total-dose hardness and maintains the intrinsic SEU and dose rate hardness advantages of SOI technology

  7. BUSFET -- A radiation-hardened SOI transistor

    International Nuclear Information System (INIS)

    Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

    1999-01-01

    The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, the authors propose a partially-depleted SOI transistor structure for mitigating the effects of trapped charge in the buried oxide on radiation hardness. They call this structure the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU or dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration, and the depth of the source. 3-D simulations show that for a body doping concentration of 10 18 cm -3 , a drain bias of 3 V, and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3 x 10 17 cm -3 , a thicker silicon film (300 nm) must be used

  8. A 60 GOPS/W, -1.8 V to 0.9 V body bias ULP cluster in 28 nm UTBB FD-SOI technology

    Science.gov (United States)

    Rossi, Davide; Pullini, Antonio; Loi, Igor; Gautschi, Michael; Gürkaynak, Frank K.; Bartolini, Andrea; Flatresse, Philippe; Benini, Luca

    2016-03-01

    Ultra-low power operation and extreme energy efficiency are strong requirements for a number of high-growth application areas, such as E-health, Internet of Things, and wearable Human-Computer Interfaces. A promising approach to achieve up to one order of magnitude of improvement in energy efficiency over current generation of integrated circuits is near-threshold computing. However, frequency degradation due to aggressive voltage scaling may not be acceptable across all performance-constrained applications. Thread-level parallelism over multiple cores can be used to overcome the performance degradation at low voltage. Moreover, enabling the processors to operate on-demand and over a wide supply voltage and body bias ranges allows to achieve the best possible energy efficiency while satisfying a large spectrum of computational demands. In this work we present the first ever implementation of a 4-core cluster fabricated using conventional-well 28 nm UTBB FD-SOI technology. The multi-core architecture we present in this work is able to operate on a wide range of supply voltages starting from 0.44 V to 1.2 V. In addition, the architecture allows a wide range of body bias to be applied from -1.8 V to 0.9 V. The peak energy efficiency 60 GOPS/W is achieved at 0.5 V supply voltage and 0.5 V forward body bias. Thanks to the extended body bias range of conventional-well FD-SOI technology, high energy efficiency can be guaranteed for a wide range of process and environmental conditions. We demonstrate the ability to compensate for up to 99.7% of chips for process variation with only ±0.2 V of body biasing, and compensate temperature variation in the range -40 °C to 120 °C exploiting -1.1 V to 0.8 V body biasing. When compared to leading-edge near-threshold RISC processors optimized for extremely low power applications, the multi-core architecture we propose has 144× more performance at comparable energy efficiency levels. Even when compared to other low-power processors

  9. SOI MESFETs for Extreme Environment Electronics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We are proposing a new extreme environment electronics (EEE) technology based on silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs)....

  10. Characterization of SOI monolithic detector system

    Science.gov (United States)

    Álvarez-Rengifo, P. L.; Soung Yee, L.; Martin, E.; Cortina, E.; Ferrer, C.

    2013-12-01

    A monolithic active pixel sensor for charged particle tracking was developed. This research is performed within the framework of an R&D project called TRAPPISTe (Tracking Particles for Physics Instrumentation in SOI Technology) whose aim is to evaluate the feasibility of developing a Monolithic Active Pixel Sensor (MAPS) with Silicon-on-Insulator (SOI) technology. Two chips were fabricated: TRAPPISTe-1 and TRAPPISTe-2. TRAPPISTe-1 was produced at the WINFAB facility at the Université catholique de Louvain (UCL), Belgium, in a 2 μm fully depleted (FD-SOI) CMOS process. TRAPPISTe-2 was fabricated with the LAPIS 0.2 μm FD-SOI CMOS process. The electrical characterization on single transistor test structures and of the electronic readout for the TRAPPISTe series of monolithic pixel detectors was carried out. The behavior of the prototypes’ electronics as a function of the back voltage was studied. Results showed that both readout circuits exhibited sensitivity to the back voltage. Despite this unwanted secondary effect, the responses of TRAPPISTe-2 amplifiers can be improved by a variation in the circuit parameters.

  11. Analysis of silicon on insulator (SOI) optical microring add-drop filter based on waveguide intersections

    Science.gov (United States)

    Kaźmierczak, Andrzej; Bogaerts, Wim; Van Thourhout, Dries; Drouard, Emmanuel; Rojo-Romeo, Pedro; Giannone, Domenico; Gaffiot, Frederic

    2008-04-01

    We present a compact passive optical add-drop filter which incorporates two microring resonators and a waveguide intersection in silicon-on-insulator (SOI) technology. Such a filter is a key element for designing simple layouts of highly integrated complex optical networks-on-chip. The filter occupies an area smaller than 10μm×10μm and exhibits relatively high quality factors (up to 4000) and efficient signal dropping capabilities. In the present work, the influence of filter parameters such as the microring-resonators radii and the coupling section shape are analyzed theoretically and experimentally

  12. Electronics and Sensor Study with the OKI SOI process

    CERN Document Server

    Arai, Yasuo

    2007-01-01

    While the SOI (Silicon-On-Insulator) device concept is very old, commercialization of the technology is relatively new and growing rapidly in high-speed processor and lowpower applications. Furthermore, features such as latch-up immunity, radiation hardness and high-temperature operation are very attractive in high energy and space applications. Once high-quality bonded SOI wafers became available in the late 90s, it opened up the possibility to get two different kinds of Si on a single wafer. This makes it possible to realize an ideal pixel detector; pairing a fully-depleted radiation sensor with CMOS circuitry in an industrial technology. In 2005 we started Si pixel R&D with OKI Electric Ind. Co., Ltd. which is the first market supplier of Fully-Depleted SOI products. We have developed processes for p+/n+ implants to the substrate and for making connections between the implants and circuits in the OKI 0.15μm FD-SOI CMOS process. We have preformed two Multi Project Wafer (MPW) runs using this SOI proces...

  13. BUSFET - A Novel Radiation-Hardened SOI Transistor

    International Nuclear Information System (INIS)

    Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

    1999-01-01

    The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, we propose a new partially-depleted SOI transistor structure that we call the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU and dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration and the depth of the source. 3-D simulations show that for a doping concentration of 10 18 cm -3 and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3x10 17 cm -3 , a thicker silicon film (300 nm) must be used

  14. High performance flexible CMOS SOI FinFETs

    KAUST Repository

    Fahad, Hossain M.; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2014-01-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due

  15. A monolithic active pixel sensor for ionizing radiation using a 180 nm HV-SOI process

    Energy Technology Data Exchange (ETDEWEB)

    Hemperek, Tomasz; Kishishita, Tetsuichi; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn, Bonn (Germany)

    2016-07-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-180 nm High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. Standard FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to trapped charge in the buried oxide layer and charged interface states created at the silicon oxide boundaries (back gate effect). The X-FAB 180 nm HV-SOI technology offers an additional isolation using a deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection. The design and measurement results from first prototypes are presented including radiation tolerance to total ionizing dose and charge collection properties of neutron irradiated samples.

  16. A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process

    Energy Technology Data Exchange (ETDEWEB)

    Hemperek, Tomasz, E-mail: hemperek@uni-bonn.de; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

    2015-10-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

  17. FinFET and UTBB for RF SOI communication systems

    Science.gov (United States)

    Raskin, Jean-Pierre

    2016-11-01

    Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

  18. Method to improve commercial bonded SOI material

    Science.gov (United States)

    Maris, Humphrey John; Sadana, Devendra Kumar

    2000-07-11

    A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than 1200.degree. C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.

  19. First results of a Double-SOI pixel chip for X-ray imaging

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Yunpeng, E-mail: yplu@ihep.ac.cn [State Key Laboratory of Particle Detection and Electronics (Institute of High Energy Physics, CAS), Beijing 100049 (China); Ouyang, Qun [State Key Laboratory of Particle Detection and Electronics (Institute of High Energy Physics, CAS), Beijing 100049 (China); Arai, Yasuo [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Org., KEK, Tsukuba 305-0801 (Japan); Liu, Yi; Wu, Zhigang; Zhou, Yang [State Key Laboratory of Particle Detection and Electronics (Institute of High Energy Physics, CAS), Beijing 100049 (China)

    2016-09-21

    Aiming at low energy X-ray imaging, a prototype chip based on Double-SOI process was designed and tested. The sensor and pixel circuit were characterized. The long lasting crosstalk issue in SOI technology was understood. The operation of pixel was verified with a pulsed infrared laser beam. The depletion of sensor revealed by signal amplitudes is consistent with the one revealed by I–V curve. An s-curve fitting resulted in a sigma of 153 e{sup −} among which equivalent noise charge (ENC) contributed 113 e{sup −}. It's the first time that the crosstalk issue in SOI technology was solved and a counting type SOI pixel demonstrated the detection of low energy radiation quantitatively.

  20. Micromachined thin-film sensors for SOI-CMOS co-integration

    CERN Document Server

    Laconte, Jean; Raskin, Jean-Pierre

    2006-01-01

    Co-integration of MEMS and MOS in SOI technology is promising and well demonstrated hereThe impact of Micromachining on SOI devices is deeply analyzed for the first timeInclude extensive TMAH etching, residual stress, microheaters, gas-flow sensors reviewResidual stresses in thin films need to be more and more monitored in MEMS designsTMAH micromachining is an attractive alternative to KOH.

  1. Performance of the INTPIX6 SOI pixel detector

    Science.gov (United States)

    Arai, Y.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Kucewicz, W.; Miyoshi, T.; Turala, M.

    2017-01-01

    Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e-. The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e-. The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

  2. Test-beam results of a SOI pixel detector prototype

    CERN Document Server

    Bugiel, Roma; Dannheim, Dominik; Fiergolski, Adrian; Hynds, Daniel; Idzik, Marek; Kapusta, P; Kucewicz, Wojciech; Munker, Ruth Magdalena; Nurnberg, Andreas Matthias

    2018-01-01

    This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200 nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μm thick high-resistivity float- zone n-type (FZ-n) wafer. The pixel size is 30 μm × 30 μm and its readout uses a source- follower configuration. The test-beam data are analysed in order to compute the spatial resolution and detector efficiency. The analysis chain includes pedestal and noise calculation, cluster reconstruction, as well as alignment and η-correction for non-linear charge sharing. The results show a spatial resolution of about 4.3 μm.

  3. Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using a self-consistent oxide code; Effet du facteur d'echelle sur la tolerance en dose de rayonnement dans le cas du courant de fuite arriere des transistors MOS/SOI. Une etude d'un oxyde utilise un code auto coherent en deux dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Leray, J.L.; Paillet, Ph.; Ferlet-Cavrois, V. [CEA Bruyeres le Chatel DRIF, 91 (France); Tavernier, C.; Belhaddad, K. [ISE Integrated System Engineering AG (Switzerland); Penzin, O. [ISE Integrated System Engineering Inc., San Jose (United States)

    1999-07-01

    A new 2-D and 3-D self-consistent code has been developed and is applied to understanding the charge trapping in SOI buried oxide causing back-channel MOS leakage in SOI transistors. Clear indications on scaling trends are obtained with respect to supply voltage and oxide thickness. (authors)

  4. A MEMS SOI-based piezoresistive fluid flow sensor

    Science.gov (United States)

    Tian, B.; Li, H. F.; Yang, H.; Song, D. L.; Bai, X. W.; Zhao, Y. L.

    2018-02-01

    In this paper, a SOI (silicon-on-insulator)-based piezoresistive fluid flow sensor is presented; the presented flow sensor mainly consists of a nylon sensing head, stainless steel cantilever beam, SOI sensor chip, printed circuit board, half-cylinder gasket, and stainless steel shell. The working principle of the sensor and some detailed contrastive analysis about the sensor structure were introduced since the nylon sensing head and stainless steel cantilever beam have distinct influence on the sensor performance; the structure of nylon sensing head and stainless steel cantilever beam is also discussed. The SOI sensor chip was fabricated using micro-electromechanical systems technologies, such as reactive ion etching and low pressure chemical vapor deposition. The designed fluid sensor was packaged and tested; a calibration installation system was purposely designed for the sensor experiment. The testing results indicated that the output voltage of the sensor is proportional to the square of the fluid flow velocity, which is coincident with the theoretical derivation. The tested sensitivity of the sensor is 3.91 × 10-4 V ms2/kg.

  5. Thin NbN film structures on SOI for SNSPD

    Energy Technology Data Exchange (ETDEWEB)

    Il' in, Konstantin; Kurz, Stephan; Henrich, Dagmar; Hofherr, Matthias; Siegel, Michael [IMS, KIT, Karlsruhe (Germany); Semenov, Alexei; Huebers, Heinz-Wilhelm [DLR, Berlin (Germany)

    2012-07-01

    Superconducting Nanowire Single-Photon Detectors (SNSPD) made from ultra-thin NbN films on sapphire demonstrate almost 100% intrinsic detection efficiency (DE). However the system DE values is less than 10% mostly limited by a very low absorptance of NbN films thinner than 5 nm. Integration of SNSPD in Si photonic circuit is a promising way to overcome this problem. We present results on optimization of technology of thin NbN film nanostructures on SOI (Silicon on Insulator) substrate used in Si photonics technology. Superconducting and normal state properties of these structures important for SNSPD development are presented and discussed.

  6. Sub-50 nm gate length SOI transistor development for high performance microprocessors

    International Nuclear Information System (INIS)

    Horstmann, M.; Greenlaw, D.; Feudel, Th.; Wei, A.; Frohberg, K.; Burbach, G.; Gerhardt, M.; Lenski, M.; Stephan, R.; Wieczorek, K.; Schaller, M.; Hohage, J.; Ruelke, H.; Klais, J.; Huebler, P.; Luning, S.; Bentum, R. van; Grasshoff, G.; Schwan, C.; Cheek, J.; Buller, J.; Krishnan, S.; Raab, M.; Kepler, N.

    2004-01-01

    Partial depleted (PD) SOI technologies have reached maturity for production of high speed, low power microprocessors. The paper will highlight several challenges found during the course of development for bringing 40 nm gate length (L GATE ) PD SOI transistors into volume manufacturing for high-speed microprocessors. The key innovations developed for this transistor in order to overcome classical gate oxide and L GATE scaling is an unique differential triple spacer structure, stressed overlayer films inducing strain in the Silicon channel and optimized junctions. This transistor structure yields an outstanding ring oscillator speed with an unloaded inverter delay of 5.5 ps. The found improvements are highly manufacturable and scaleable for future device technologies like FD SOI

  7. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

    Science.gov (United States)

    Pavanello, Marcelo Antonio; de Souza, Michelly; Ribeiro, Thales Augusto; Martino, João Antonio; Flandre, Denis

    2016-11-01

    This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped transistors. Devices from two different technologies have been measured and show that the mobility increase rate with temperature for GC SOI transistors is similar to uniformly doped devices for temperatures down to 90 K. However, at liquid helium temperature the rate of mobility increase is larger in GC SOI than in standard devices because of the different mobility scattering mechanisms. The analog properties of GC SOI devices have been investigated down to 4.16 K and show that because of its better transconductance and output conductance, an intrinsic voltage gain improvement with temperature is also obtained for devices in the whole studied temperature range. GC devices are also capable of reducing the impact ionization due to the high electric field in the drain region, increasing the drain breakdown voltage of fully-depleted SOI MOSFETs at any studied temperature and the kink voltage at 4.16 K.

  8. Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions

    International Nuclear Information System (INIS)

    Musseau, O.; Leray, J.L.; Ferlet, V.; Umbert, A.; Coic, Y.M.; Hesto, P.

    1991-01-01

    We have investigated with both experimental and numerical methods (Monte Carlo and drift-diffusion models) various charge collection mechanisms in NMOS/SOI transistors irradiated by single energetic heavy ions. Our physical interpretations of data emphasize the influence of various parasitic structures of the device. Two charge collection mechanisms are detailed: substrate funneling in buried MOS capacitor and latching of the parasitic bipolar transistor. Based on carrier transport and charge collection, the sensitivity of future scaled down CMOS/SOI technologies is finally discussed

  9. A Simple Model of Offshore Outsourcing, Technology Upgrading and Welfare

    OpenAIRE

    Jung , Jaewon; Mercenier , Jean

    2009-01-01

    We adapt Yeaple's (2005) heterogeneous agents framework to model firms in the North as making explicit offshore outsourcing decisions to cheap-labor economies. Globalization results from a lowering of the set-up costs incurred when engaging in offshore activities. We highlight how firms'technology transformations due to global- ization will induce skill upgrading in the North, increase aggregate productivity, av- erage wages and therefore total welfare at the cost of increased wage inequaliti...

  10. Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs

    International Nuclear Information System (INIS)

    Chen Jing; Luo Jiexin; Wu Qingqing; Chai Zhan; Huang Xiaolu; Wei Xing; Wang Xi

    2012-01-01

    Silicon-on-insulate (SOI) MOSFETs offer benefits over bulk competitors for fully isolation and smaller junction capacitance. The performance of partially depleted (PD) SOI MOSFETs, though, is not good enough. Since the body is floating, the extra holes (for nMOSFETs) in this region accumulate, causing body potential arise, which of course degrades the performance of the device. How to suppress the floating-body effect becomes critical. There are mainly two ways for the goal. One is to employ body-contact structures, and the other SiGe source/drain structures. However, the former consumes extra area, not welcomed in the state-of-the-art chips design. The latter is not compatible with the traditional CMOS technology. Finding a structure both saving area and compatible technology is the most urgent for PD SOI MOSFETs. Recently, we have developed a new structure with extra heavy boron implantation in the source region for PD SOI nMOSFETs. It consumes no extra area and is also compatible with CMOS technology. The device is found to be free of kink effect in simulation, which implies the floating-body effect is greatly suppressed. In addition, the mechanisms of the kink-free, as well as the impact of different implanting conditions are interpreted.

  11. A simple and proven technology for reclaiming acidic mine waters

    International Nuclear Information System (INIS)

    Bourke, Chris; Mack, Bernie

    2011-01-01

    The cost of water treatment is now more than ever a major consideration for maintaining an environmentally and economically sustainable mining operation. As an industry, we often have to consider water sources that are highly impure and difficult to treat. We are also discovering the value of our waste waters in this regard and using new and improved methods and technology to reclaim and reuse water. In many instances, the water or waste water to be treated is highly acidic and saturated in sparingly soluble salts. Conventional systems used to liberate this type of water typically involve high doses of lime with large volumes of waste sludge produced, and are comparatively complex to operate, to pretreat the water in order to reduce scaling tendency on the reverse osmosis stage. However, if the water is considered valuable for reuse, then why not avoid difficult and cumbersome pretreatment processes and treat the water at low pH to keep the sparingly soluble salts, metals and other dissolved species in solution. This paper describes a patented technology that uses and successfully proves this concept as a cost effective option for certain situations. Results from a treatability study on an Australian groundwater are discussed, along with an economic comparison to a conventional method and discussion on full-scale potential.

  12. Modern devices the simple physics of sophisticated technology

    CERN Document Server

    Joseph, Charles L

    2016-01-01

    This book discusses the principles of physics through applications of state-of-the-art technologies and advanced instruments. The authors use diagrams, sketches, and graphs coupled with equations and mathematical analysis to enhance the reader's understanding of modern devices. Readers will learn to identify common underlying physical principles that govern several types of devices, while gaining an understanding of the performance trade-off imposed by the physical limitations of various processing methods. The topics discussed in the book assume readers have taken an introductory physics course, college algebra, and have a basic understanding of calculus. * Describes the basic physics behind a large number of devices encountered in everyday life, from the air conditioner to Blu-ray discs * Covers state-of-the-art devices such as spectrographs, photoelectric image sensors, spacecraft systems, astronomical and planetary observatories, biomedical imaging instruments, particle accelerators, and jet engines * Inc...

  13. Performance of the INTPIX6 SOI pixel detector

    International Nuclear Information System (INIS)

    Arai, Y.; Miyoshi, T.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Turala, M.; Kucewicz, W.

    2017-01-01

    Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ  m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241 Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e − . The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e − . The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

  14. Gate Engineering in SOI LDMOS for Device Reliability

    Directory of Open Access Journals (Sweden)

    Aanand

    2016-01-01

    Full Text Available A linearly graded doping drift region with step gate structure, used for improvement of reduced surface field (RESURF SOI LDMOS transistor performance has been simulated with 0.35µm technology in this paper. The proposed device has one poly gate and double metal gate arranged in a stepped manner, from channel to drift region. The first gate uses n+ poly (near source where as other two gates of aluminium. The first gate with thin gate oxide has good control over the channel charge. The third gate with thick gate oxide at drift region reduce gate to drain capacitance. The arrangement of second and third gates in a stepped manner in drift region spreads the electric field uniformly. Using two dimensional device simulations, the proposed SOI LDMOS is compared with conventional structure and the extended metal structure. We demonstrate that the proposed device exhibits significant enhancement in linearity, breakdown voltage, on-resistance and HCI. Double metal gate reduces the impact ionization area which helps to improve the Hot Carrier Injection effect..

  15. SOI silicon on glass for optical MEMS

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Ravnkilde, Jan Tue; Hansen, Ole

    2003-01-01

    and a final sealing at the interconnects can be performed using a suitable polymer. Packaged MEMS on glass are advantageous within Optical MEMS and for sensitive capacitive devices. We report on experiences with bonding SOI to Pyrex. Uniform DRIE shallow and deep etching was achieved by a combination......A newly developed fabrication method for fabrication of single crystalline Si (SCS) components on glass, utilizing Deep Reactive Ion Etching (DRIE) of a Silicon On Insulator (SOI) wafer is presented. The devices are packaged at wafer level in a glass-silicon-glass (GSG) stack by anodic bonding...... of an optimized device layout and an optimized process recipe. The behavior of the buried oxide membrane when used as an etch stop for the through-hole etch is described. No harmful buckling or fracture of the membrane is observed for an oxide thickness below 1 μm, but larger and more fragile released structures...

  16. An SEU resistant 256K SOI SRAM

    Science.gov (United States)

    Hite, L. R.; Lu, H.; Houston, T. W.; Hurta, D. S.; Bailey, W. E.

    1992-12-01

    A novel SEU (single event upset) resistant SRAM (static random access memory) cell has been implemented in a 256K SOI (silicon on insulator) SRAM that has attractive performance characteristics over the military temperature range of -55 to +125 C. These include worst-case access time of 40 ns with an active power of only 150 mW at 25 MHz, and a worst-case minimum WRITE pulse width of 20 ns. Measured SEU performance gives an Adams 10 percent worst-case error rate of 3.4 x 10 exp -11 errors/bit-day using the CRUP code with a conservative first-upset LET threshold. Modeling does show that higher bipolar gain than that measured on a sample from the SRAM lot would produce a lower error rate. Measurements show the worst-case supply voltage for SEU to be 5.5 V. Analysis has shown this to be primarily caused by the drain voltage dependence of the beta of the SOI parasitic bipolar transistor. Based on this, SEU experiments with SOI devices should include measurements as a function of supply voltage, rather than the traditional 4.5 V, to determine the worst-case condition.

  17. Performance analysis of SOI MOSFET with rectangular recessed channel

    Science.gov (United States)

    Singh, M.; Mishra, S.; Mohanty, S. S.; Mishra, G. P.

    2016-03-01

    In this paper a two dimensional (2D) rectangular recessed channel-silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed.

  18. Performance analysis of SOI MOSFET with rectangular recessed channel

    International Nuclear Information System (INIS)

    Singh, M; Mishra, G P; Mishra, S; Mohanty, S S

    2016-01-01

    In this paper a two dimensional (2D) rectangular recessed channel–silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed. (paper)

  19. Evaluation of a High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERION

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad

    2010-01-01

    Silicon-On-Insulator (SOI) technology utilizes the addition of an insulation layer in its structure to reduce leakage currents and to minimize parasitic junctions. As a result, SOIbased devices exhibit reduced internal heating as compared to the conventional silicon devices, consume less power, and can withstand higher operating temperatures. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a commercial-off-the-shelf (COTS) SOI half-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

  20. An analysis of radiation effects on electronics and soi-mos devices as an alternative

    International Nuclear Information System (INIS)

    Ikraiam, F. A.

    2013-01-01

    The effects of radiation on semiconductors and electronic components are analyzed. The performance of such circuitry depends upon the reliability of electronic devices where electronic components will be unavoidably exposed to radiation. This exposure can be detrimental or even fatal to the expected function of the devices. Single event effects (SEE), in particular, which lead to sudden device or system failure and total dose effects can reduce the lifetime of electronic devices in such systems are discussed. Silicon-on-insulator (SOI) technology is introduced as an alternative for radiation-hardened devices. I-V Characteristics Curves for SOI-MOS devices subjected to a different total radiation doses are illustrated. In addition, properties of some semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, and AlGaN/GaN are compared with those of SOI devices. The recognition of the potential usefulness of SOI-MOS semiconductor materials for harsh environments is discussed. A summary of radiation effects, impacts and mitigation techniques is also presented. (authors)

  1. Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments.

    Science.gov (United States)

    Ngo, Ha-Duong; Mukhopadhyay, Biswaijit; Ehrmann, Oswin; Lang, Klaus-Dieter

    2015-08-18

    In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a "one-sensor-one-packaging_technology" concept. The second one uses a standard flip-chip bonding technique. The first sensor is a "floating-concept", capable of measuring pressures at temperatures up to 400 °C (constant load) with an accuracy of 0.25% Full Scale Output (FSO). A push rod (mounted onto the steel membrane) transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process). A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not "floating" but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA.

  2. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

    International Nuclear Information System (INIS)

    Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

    2005-01-01

    The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

  3. Heterojunction fully depleted SOI-TFET with oxide/source overlap

    Science.gov (United States)

    Chander, Sweta; Bhowmick, B.; Baishya, S.

    2015-10-01

    In this work, a hetero-junction fully depleted (FD) Silicon-on-Insulator (SOI) Tunnel Field Effect Transistor (TFET) nanostructure with oxide overlap on the Germanium-source region is proposed. Investigations using Synopsys Technology Computer Aided Design (TCAD) simulation tools reveal that the simple oxide overlap on the Germanium-source region increases the tunneling area as well as the tunneling current without degrading the band-to-band tunneling (BTBT) and improves the device performance. More importantly, the improvement is independent of gate overlap. Simulation study shows improvement in ON current, subthreshold swing (SS), OFF current, ION/IOFF ration, threshold voltage and transconductance. The proposed device with hafnium oxide (HfO2)/Aluminium Nitride (AlN) stack dielectric material offers an average subthreshold swing of 22 mV/decade and high ION/IOFF ratio (∼1010) at VDS = 0.4 V. Compared to conventional TFET, the Miller capacitance of the device shows the enhanced performance. The impact of the drain voltage variation on different parameters such as threshold voltage, subthreshold swing, transconductance, and ION/IOFF ration are also found to be satisfactory. From fabrication point of view also it is easy to utilize the existing CMOS process flows to fabricate the proposed device.

  4. Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments

    Directory of Open Access Journals (Sweden)

    Ha-Duong Ngo

    2015-08-01

    Full Text Available In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a “one-sensor-one-packaging_technology” concept. The second one uses a standard flip-chip bonding technique. The first sensor is a “floating-concept”, capable of measuring pressures at temperatures up to 400 °C (constant load with an accuracy of 0.25% Full Scale Output (FSO. A push rod (mounted onto the steel membrane transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process. A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not “floating” but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA.

  5. A 2D simulation study and characterization of a novel vertical SOI MOSFET with a smart source/body tie

    International Nuclear Information System (INIS)

    Lin, Jyi-Tsong; Lee, Tai-Yi; Lin, Kao-Cheng

    2008-01-01

    A novel vertical silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with a smart source/body contact, SSBVMOS, is presented here for the first time. 2D simulations reveal that the SSBVMOS reduces self-heating effects, with the lattice temperature reduced by 14% and the hole temperature reduced by 25%. The SSBVMOS also eliminates the floating body effect, something that other SOI vertical MOSFETs are unable to accomplish, regardless of the thickness of the thin film. The SSBVMOS is further found to have a better drain-induced barrier lowering and subthreshold swing than either a conventional vertical MOSFET or an SOI vertical MOSFET. Moreover, these results are achieved using typical pillar heights and buried oxide thicknesses. Should future technological advances allow for lower pillars or thinner buried oxides, the SSBVMOS performance would further increase

  6. Performance study of double SOI image sensors

    Science.gov (United States)

    Miyoshi, T.; Arai, Y.; Fujita, Y.; Hamasaki, R.; Hara, K.; Ikegami, Y.; Kurachi, I.; Nishimura, R.; Ono, S.; Tauchi, K.; Tsuboyama, T.; Yamada, M.

    2018-02-01

    Double silicon-on-insulator (DSOI) sensors composed of two thin silicon layers and one thick silicon layer have been developed since 2011. The thick substrate consists of high resistivity silicon with p-n junctions while the thin layers are used as SOI-CMOS circuitry and as shielding to reduce the back-gate effect and crosstalk between the sensor and the circuitry. In 2014, a high-resolution integration-type pixel sensor, INTPIX8, was developed based on the DSOI concept. This device is fabricated using a Czochralski p-type (Cz-p) substrate in contrast to a single SOI (SSOI) device having a single thin silicon layer and a Float Zone p-type (FZ-p) substrate. In the present work, X-ray spectra of both DSOI and SSOI sensors were obtained using an Am-241 radiation source at four gain settings. The gain of the DSOI sensor was found to be approximately three times that of the SSOI device because the coupling capacitance is reduced by the DSOI structure. An X-ray imaging demonstration was also performed and high spatial resolution X-ray images were obtained.

  7. Analysis of pre-service physics teacher skills designing simple physics experiments based technology

    Science.gov (United States)

    Susilawati; Huda, C.; Kurniawan, W.; Masturi; Khoiri, N.

    2018-03-01

    Pre-service physics teacher skill in designing simple experiment set is very important in adding understanding of student concept and practicing scientific skill in laboratory. This study describes the skills of physics students in designing simple experiments based technologicall. The experimental design stages include simple tool design and sensor modification. The research method used is descriptive method with the number of research samples 25 students and 5 variations of simple physics experimental design. Based on the results of interviews and observations obtained the results of pre-service physics teacher skill analysis in designing simple experimental physics charged technology is good. Based on observation result, pre-service physics teacher skill in designing simple experiment is good while modification and sensor application are still not good. This suggests that pre-service physics teacher still need a lot of practice and do experiments in designing physics experiments using sensor modifications. Based on the interview result, it is found that students have high enough motivation to perform laboratory activities actively and students have high curiosity to be skilled at making simple practicum tool for physics experiment.

  8. Influence of edge effects on single event upset susceptibility of SOI SRAMs

    International Nuclear Information System (INIS)

    Gu, Song; Liu, Jie; Zhao, Fazhan; Zhang, Zhangang; Bi, Jinshun; Geng, Chao; Hou, Mingdong; Liu, Gang; Liu, Tianqi; Xi, Kai

    2015-01-01

    An experimental investigation of the single event upset (SEU) susceptibility for heavy ions at tilted incidence was performed. The differences of SEU cross-sections between tilted incidence and normal incidence at equivalent effective linear energy transfer were 21% and 57% for the silicon-on-insulator (SOI) static random access memories (SRAMs) of 0.5 μm and 0.18 μm feature size, respectively. The difference of SEU cross-section raised dramatically with increasing tilt angle for SOI SRAM of deep-submicron technology. The result of CRÈME-MC simulation for tilted irradiation of the sensitive volume indicates that the energy deposition spectrum has a substantial tail extending into the low energy region. The experimental results show that the influence of edge effects on SEU susceptibility cannot be ignored in particular with device scaling down

  9. Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration

    Science.gov (United States)

    Laconte, Jean; Flandre, D.; Raskin, Jean-Pierre

    Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution.

  10. Process optimization of a deep trench isolation structure for high voltage SOI devices

    International Nuclear Information System (INIS)

    Zhu Kuiying; Qian Qinsong; Zhu Jing; Sun Weifeng

    2010-01-01

    The process reasons for weak point formation of the deep trench on SOI wafers have been analyzed in detail. An optimized trench process is also proposed. It is found that there are two main reasons: one is over-etching laterally of the silicon on the surface of the buried oxide caused by a fringe effect; and the other is the slow growth rate of the isolation oxide in the concave silicon corner of the trench bottom. In order to improve the isolation performance of the deep trench, two feasible ways for optimizing the trench process are proposed. The improved process thickens the isolation oxide and rounds sharp silicon corners at their weak points, increasing the applied voltage by 15-20 V at the same leakage current. The proposed new trench isolation process has been verified in the foundry's 0.5-μm HV SOI technology. (semiconductor devices)

  11. VCSELs and silicon light sources exploiting SOI grating mirrors

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2012-01-01

    In this talk, novel vertical-cavity laser structure consisting of a dielectric Bragg reflector, a III-V active region, and a high-index-contrast grating made in the Si layer of a silicon-on-insulator (SOI) wafer will be presented. In the Si light source version of this laser structure, the SOI...... the Bragg reflector. Numerical simulations show that both the silicon light source and the VCSEL exploiting SOI grating mirrors have superior performances, compared to existing silicon light sources and long wavelength VCSELs. These devices are highly adequate for chip-level optical interconnects as well...

  12. Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO2 interface under γ-irradiation: effect of preliminary ion implantation

    International Nuclear Information System (INIS)

    Naumova, O V; Fomin, B I; Ilnitsky, M A; Popov, V P

    2012-01-01

    In this study, we examined the effect of preliminary boron or phosphorous implantation on charge accumulation in the buried oxide of SOI-MOSFETs irradiated with γ-rays in the total dose range (D) of 10 5 –5 × 10 7 rad. The buried oxide was obtained by high-temperature thermal oxidation of Si, and it was not subjected to any implantation during the fabrication process of SOI structures. It was found that implantation with boron or phosphorous ions, used in fabrication technologies of SOI-MOSFETs, increases the concentration of precursor traps in the buried oxide of SOI structures. Unlike in the case of boron implantation, phosphorous implantation leads to an increased density of states at the Si/buried SiO 2 interface during subsequent γ-irradiation. In the γ-irradiated SOI-MOSFETs, the accumulated charge density and the density of surface states in the Si/buried oxide layer systems both vary in proportion to k i ln D. The coefficients k i for as-fabricated and ion-implanted Si/buried SiO 2 systems were evaluated. From the data obtained, it was concluded that a low density of precursor hole traps was a factor limiting the positive charge accumulation in the buried oxide of as-fabricated (non-implanted) SOI structures with the bonded Si/buried SiO 2 interface. (paper)

  13. Hybrid III-V/SOI Resonant Cavity Photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

    2016-01-01

    A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization.......A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

  14. Insulator photocurrents: Application to dose rate hardening of CMOS/SOI integrated circuits

    International Nuclear Information System (INIS)

    Dupont-Nivet, E.; Coiec, Y.M.; Flament, O.; Tinel, F.

    1998-01-01

    Irradiation of insulators with a pulse of high energy x-rays can induce photocurrents in the interconnections of integrated circuits. The authors present, here, a new method to measure and analyze this effect together with a simple model. They also demonstrate that these insulator photocurrents have to be taken into account to obtain high levels of dose-rate hardness with CMOS on SOI integrated circuits, especially flip-flops or memory blocks of ASICs. They show that it explains some of the upsets observed in a SRAM embedded in an ASIC

  15. The lucky image-motion prediction for simple scene observation based soft-sensor technology

    Science.gov (United States)

    Li, Yan; Su, Yun; Hu, Bin

    2015-08-01

    High resolution is important to earth remote sensors, while the vibration of the platforms of the remote sensors is a major factor restricting high resolution imaging. The image-motion prediction and real-time compensation are key technologies to solve this problem. For the reason that the traditional autocorrelation image algorithm cannot meet the demand for the simple scene image stabilization, this paper proposes to utilize soft-sensor technology in image-motion prediction, and focus on the research of algorithm optimization in imaging image-motion prediction. Simulations results indicate that the improving lucky image-motion stabilization algorithm combining the Back Propagation Network (BP NN) and support vector machine (SVM) is the most suitable for the simple scene image stabilization. The relative error of the image-motion prediction based the soft-sensor technology is below 5%, the training computing speed of the mathematical predication model is as fast as the real-time image stabilization in aerial photography.

  16. Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad

    2009-01-01

    Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

  17. High performance flexible CMOS SOI FinFETs

    KAUST Repository

    Fahad, Hossain M.

    2014-06-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

  18. LORINE: Neutron emission Locator by SOI detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hamrita, H.; Kondrasovs, V.; Borbotte, J. M.; Normand, S. [CEA, LIST, Laboratoire Capteurs et Architectures Electronique, F-91191 Gif-sur-Yvette Cedex (France); Saurel, N. [CEA, DAM, VALDUC, F-21120 Is sur Tille (France)

    2009-07-01

    The aim of this work is to develop a fast Neutron Emission Locator based on silicon on Insulator detector (LORINE). This locator can be used in the presence of significant flux of gamma radiation. LORINE was developed to locate areas containing a significant amount of actinide during the dismantling operations of equipment. From the results obtained in laboratory, we have proposed the prototype of neutron emission locator as follows: the developed design consists of 5 SOI (Silicon-on-insulator) detectors (1*1 cm{sup 2}) with their charge preamplifiers and their respective converters. All are installed on 5 faces of a boron polyethylene cube (5*5*5 cm{sup 3}). This cube plays the role of neutron shielding between the several detectors. The design must be so compact for use in glove boxes. An electronic card based on micro-controller has been made to control sensors and to send the necessary information to the computer. Location of fast neutron sources does not yet exist in a so compact design and it can be operated in the presence of very important gamma radiation flux

  19. Sustainable development - billions of watts under the seas - Marine current turbines play simple - Technological waves

    International Nuclear Information System (INIS)

    Lucas, Th.

    2011-01-01

    The author evokes the opportunities of power generation by the development of sea current or tidal stream turbines. Some developments are already tested by Norwegian, French, Danish, British and American companies. Some specific turbines are briefly presented. In order to reduce the cost of the electricity production from sea currents, manufacturers are using simple and robust technologies, and exploit the experience gained on wind turbines. Some designs and prototypes are evoked for the production of electricity by sea waves (Pelamis and Oyster projects). Principles, strengths and production projects are briefly indicated. The challenge of maintenance in sea environment is outlined for these projects

  20. A simple satellite system to locate gamma-ray bursters using scintillating fiber technology

    International Nuclear Information System (INIS)

    Colavita, A.; Fratnik, F.

    1993-07-01

    We present a study on the feasibility of using a system of small, light, long-lived and simple satellites in order to locate gamma-ray bursters. Each small satellite possesses only electronics to discriminate gamma-rays out of the large background of cosmic rays and to time the arrival of the front of a gamma-ray burst. The arrival of a γ-ray strikes a plane made out of scintillating fibers. A layered structure of thin lead foils and scintillating fibers is used to obtain a low trigger threshold of approximately 20 MeV. To locate the burster applying triangulation methods, we use the time of arrival of the front of the gamma-ray burst and the position of the satellites at that very moment. We review an elementary version of the triangulation method to study the angular error in the determination of the burster position. We show that for almost all non-pathological distances among satellites we can determine the angular location of the source to better than one arc min. This precision allows us to find the visible counterpart of the burster, if it exists. These simple satellites can be made modular in order to customize their sizes or weights in order to use spare space available during major launches. We also propose a block diagram for the satellite architecture as well as a simple and strong detector using scintillating fiber technology. (author). 13 refs, 5 figs

  1. Croire en soi, croire en l'autre

    Directory of Open Access Journals (Sweden)

    Eugène Enriquez

    2014-04-01

    Full Text Available La croyance aux Dieux ou en un Dieu unique c'est-à-dire à l'incroyable est fort répandue et semble normale comme avoir confiance en soi et en l'autre. Mais croire en soi et en l'autre apparaît étonnant car ce serait se mettre sur le même rang que Dieu. Effectivement l'homme essaie de ressembler à Dieu. Mais à Dieu blessé, faillible, s'interrogeant constamment. Ce Dieu nouveau est un "sujet amoureux" amoureux de soi, de l'autre et de la vie. Il se conduit comme un "Dichter" assumant une responsabilité morale. Il est difficile, voire souvent impossible de se situer comme un "Dichter". C'est pourtant la tâche à laquelle l'homme contemporain est confronté.

  2. Characterizing SOI Wafers By Use Of AOTF-PHI

    Science.gov (United States)

    Cheng, Li-Jen; Li, Guann-Pyng; Zang, Deyu

    1995-01-01

    Developmental nondestructive method of characterizing layers of silicon-on-insulator (SOI) wafer involves combination of polarimetric hyperspectral imaging by use of acousto-optical tunable filters (AOTF-PHI) and computational resources for extracting pertinent data on SOI wafers from polarimetric hyperspectral images. Offers high spectral resolution and both ease and rapidity of optical-wavelength tuning. Further efforts to implement all of processing of polarimetric spectral image data in special-purpose hardware for sake of procesing speed. Enables characterization of SOI wafers in real time for online monitoring and adjustment of production. Also accelerates application of AOTF-PHI to other applications in which need for high-resolution spectral imaging, both with and without polarimetry.

  3. The Bridges SOI Model School Program at Palo Verde School, Palo Verde, Arizona.

    Science.gov (United States)

    Stock, William A.; DiSalvo, Pamela M.

    The Bridges SOI Model School Program is an educational service based upon the SOI (Structure of Intellect) Model School curriculum. For the middle seven months of the academic year, all students in the program complete brief daily exercises that develop specific cognitive skills delineated in the SOI model. Additionally, intensive individual…

  4. SOI MESFETs on high-resistivity, trap-rich substrates

    Science.gov (United States)

    Mehr, Payam; Zhang, Xiong; Lepkowski, William; Li, Chaojiang; Thornton, Trevor J.

    2018-04-01

    The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

  5. Synthetic metabolic engineering-a novel, simple technology for designing a chimeric metabolic pathway

    Directory of Open Access Journals (Sweden)

    Ye Xiaoting

    2012-09-01

    Full Text Available Abstract Background The integration of biotechnology into chemical manufacturing has been recognized as a key technology to build a sustainable society. However, the practical applications of biocatalytic chemical conversions are often restricted due to their complexities involving the unpredictability of product yield and the troublesome controls in fermentation processes. One of the possible strategies to overcome these limitations is to eliminate the use of living microorganisms and to use only enzymes involved in the metabolic pathway. Use of recombinant mesophiles producing thermophilic enzymes at high temperature results in denaturation of indigenous proteins and elimination of undesired side reactions; consequently, highly selective and stable biocatalytic modules can be readily prepared. By rationally combining those modules together, artificial synthetic pathways specialized for chemical manufacturing could be designed and constructed. Results A chimeric Embden-Meyerhof (EM pathway with balanced consumption and regeneration of ATP and ADP was constructed by using nine recombinant E. coli strains overproducing either one of the seven glycolytic enzymes of Thermus thermophilus, the cofactor-independent phosphoglycerate mutase of Pyrococcus horikoshii, or the non-phosphorylating glyceraldehyde-3-phosphate dehydrogenase of Thermococcus kodakarensis. By coupling this pathway with the Thermus malate/lactate dehydrogenase, a stoichiometric amount of lactate was produced from glucose with an overall ATP turnover number of 31. Conclusions In this study, a novel and simple technology for flexible design of a bespoke metabolic pathway was developed. The concept has been testified via a non-ATP-forming chimeric EM pathway. We designated this technology as “synthetic metabolic engineering”. Our technology is, in principle, applicable to all thermophilic enzymes as long as they can be functionally expressed in the host, and thus would be

  6. Total dose induced latch in short channel NMOS/SOI transistors

    International Nuclear Information System (INIS)

    Ferlet-Cavrois, V.; Quoizola, S.; Musseau, O.; Flament, O.; Leray, J.L.; Pelloie, J.L.; Raynaud, C.; Faynot, O.

    1998-01-01

    A latch effect induced by total dose irradiation is observed in short channel SOI transistors. This effect appears on NMOS transistors with either a fully or a partially depleted structure. It is characterized by a hysteresis behavior of the Id-Vg characteristics at high drain bias for a given critical dose. Above this dose, the authors still observe a limited leakage current at low drain bias (0.1 V), but a high conduction current at high drain bias (2 V) as the transistor should be in the off-state. The critical dose above which the latch appears strongly depends on gate length, transistor structure (fully or partially depleted), buried oxide thickness and supply voltage. Two-dimensional (2D) numerical simulations indicate that the parasitic condition is due to the latch of the back gate transistor triggered by charge trapping in the buried oxide. To avoid the latch induced by the floating body effect, different techniques can be used: doping engineering, body contacts, etc. The study of the main parameters influencing the latch (gate length, supply voltage) shows that the scaling of technologies does not necessarily imply an increased latch sensitivity. Some technological parameters like the buried oxide hardness and thickness can be used to avoid latch, even at high cumulated dose, on highly integrated SOI technologies

  7. Reduced nonlinearities in 100-nm high SOI waveguides

    Science.gov (United States)

    Lacava, C.; Marchetti, R.; Vitali, V.; Cristiani, I.; Giuliani, G.; Fournier, M.; Bernabe, S.; Minzioni, P.

    2016-03-01

    Here we show the results of an experimental analysis dedicated to investigate the impact of optical non linear effects, such as two-photon absorption (TPA), free-carrier absorption (FCA) and free-carrier dispersion (FCD), on the performance of integrated micro-resonator based filters for application in WDM telecommunication systems. The filters were fabricated using SOI (Silicon-on-Insulator) technology by CEA-Leti, in the frame of the FP7 Fabulous Project, which aims to develop low-cost and high-performance integrated optical devices to be used in new generation passive optical- networks (NG-PON2). Different designs were tested, including both ring-based structures and racetrack-based structures, with single-, double- or triple- resonator configuration, and using different waveguide cross-sections (from 500 x 200 nm to 825 x 100 nm). Measurements were carried out using an external cavity tunable laser source operating in the extended telecom bandwidth, using both continuous wave signals and 10 Gbit/s modulated signals. Results show that the use 100-nm high waveguide allows reducing the impact of non-linear losses, with respect to the standard waveguides, thus increasing by more than 3 dB the maximum amount of optical power that can be injected into the devices before causing significant non-linear effects. Measurements with OOK-modulated signals at 10 Gbit/s showed that TPA and FCA don't affect the back-to-back BER of the signal, even when long pseudo-random-bit-sequences (PRBS) are used, as the FCD-induced filter-detuning increases filter losses but "prevents" excessive signal degradation.

  8. Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field

    Science.gov (United States)

    Damianos, D.; Vitrant, G.; Lei, M.; Changala, J.; Kaminski-Cachopo, A.; Blanc-Pelissier, D.; Cristoloveanu, S.; Ionica, I.

    2018-05-01

    In this work, we investigate Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However, in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO2/Si interfaces. The impact of the electric field at each interface of the SOI on the SHG is assessed. The SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials.

  9. An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications.

    Science.gov (United States)

    Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

    2016-11-04

    An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA-0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C-1.79 mV/°C in the range 20-300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(V excit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min) -0.1 in the tested range of 0-4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries.

  10. An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications †

    Science.gov (United States)

    Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

    2016-01-01

    An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA–0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C–1.79 mV/°C in the range 20–300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(Vexcit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min)−0.1 in the tested range of 0–4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries. PMID:27827904

  11. SOI Digital Accelerometer Based on Pull-in Time Configuration

    NARCIS (Netherlands)

    Pakula, L.S.; Rajaraman, V.; French, P.J.

    2009-01-01

    The operation principle, design, fabrication and measurement results of a quasi digital accelerometer fabricated on a thin silicon-on-insulator (SOI) substrate is presented. The accelerometer features quasi-digital output, therefore eliminating the need for analogue signal conditioning. The

  12. A high efficiency lateral light emitting device on SOI

    NARCIS (Netherlands)

    Hoang, T.; Le Minh, P.; Holleman, J.; Zieren, V.; Goossens, M.J.; Schmitz, Jurriaan

    2005-01-01

    The infrared light emission of lateral p/sup +/-p-n/sup +/ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of the free carriers in one dimension due to the buried oxide was suggested to be a key point to increase

  13. SOI Transistor measurement techniques using body contacted transistors

    International Nuclear Information System (INIS)

    Worley, E.R.; Williams, R.

    1989-01-01

    Measurements of body contacted SOI transistors are used to isolate parameters of the back channel and island edge transistor. Properties of the edge and back channel transistor have been measured before and after X-ray irradiation (ARACOR). The unique properties of the edge transistor are shown to be a result of edge geometry as confirmed by a two dimensional transistor simulator

  14. Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring.

    Science.gov (United States)

    Malits, Maria; Brouk, Igor; Nemirovsky, Yael

    2018-05-19

    This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage ( V t ) can be used to accurately measure the chip local temperature by using a V t extractor circuit. Furthermore, the circuit's performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the V t extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K⁻500 K temperature range while consuming only 30 µW during operation.

  15. A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

    Science.gov (United States)

    Yau, J.-B.; Cai, J.; Hashemi, P.; Balakrishnan, K.; D'Emic, C.; Ning, T. H.

    2018-04-01

    We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see if pipe defects (emitter-collector shorts caused by locally enhanced dopant diffusion) are a show stopper for such bipolar technology. Measurements of IC-VCE and Gummel currents in parallel-connected transistor chains as a function of post-fabrication rapid thermal anneal cycles allow several process-related electrical defects to be identified. They include defective emitter-base and collector-base diodes, pipe defects, and defects associated with a dopant-deficient region in an extrinsic base adjacent its intrinsic base. There is no evidence of pipe defects being a major concern in SOI lateral bipolar transistors.

  16. Simple technologies for on-farm composting of cattle slurry solid fraction

    International Nuclear Information System (INIS)

    Brito, L.M.; Mourão, I.; Coutinho, J.; Smith, S.R.

    2012-01-01

    Highlights: ► Simple management techniques were examined for composting slurry solid fraction. ► Composting slurry solids was effective without bulking agents, turning or rewetting. ► Maximum rates of organic matter destruction were observed in short piles. ► Thermophilic temperatures in tall piles maximised sanitation and moisture reduction. ► The simple compost management approach maximised N retention and agronomic value. - Abstract: Composting technologies and control systems have reached an advanced stage of development, but these are too complex and expensive for most agricultural practitioners for treating livestock slurries. The development of simple, but robust and cost-effective techniques for composting animal slurries is therefore required to realise the potential benefits of waste sanitation and soil improvement associated with composted livestock manures. Cattle slurry solid fraction (SF) was collected at the rates of 4 m 3 h −1 and 1 m 3 h −1 and composted in tall (1.7 m) and short (1.2 m) static piles, to evaluate the physicochemical characteristics and nutrient dynamics of SF during composting without addition of bulking agent materials, and without turning or water addition. Highest maximum temperatures (62–64 °C) were measured in tall piles compared to short piles (52 °C). However, maximum rates of organic matter (OM) destruction were observed at mesophilic temperature ranges in short piles, compared to tall piles, whereas thermophilic temperatures in tall piles maximised sanitation and enhanced moisture reduction. Final OM losses were within the range of 520–660 g kg −1 dry solids and the net loss of OM significantly (P 4 + and increased concentrations of NO 3 - in SF composts. The results indicated that minimum intervention composting of SF in static piles over 168 days can produce agronomically effective organic soil amendments containing significant amounts of OM (772–856 g kg −1 ) and plant nutrients. The

  17. Simple technologies for on-farm composting of cattle slurry solid fraction

    Energy Technology Data Exchange (ETDEWEB)

    Brito, L.M., E-mail: miguelbrito@esa.ipvc.pt [Escola Superior Agraria, Instituto Politecnico de Viana do Castelo, Refoios, 4990-706 Ponte de Lima (Portugal) and Mountain Research Centre (CIMO), IPB, Campus de St Apolonia, Apartado 1172, 5301-855 Braganca (Portugal); Mourao, I. [Escola Superior Agraria, Instituto Politecnico de Viana do Castelo, Refoios, 4990-706 Ponte de Lima (Portugal) and Mountain Research Centre (CIMO), IPB, Campus de St Apolonia, Apartado 1172, 5301-855 Braganca (Portugal); Coutinho, J., E-mail: j_coutin@utad.pt [C. Quimica, DeBA, EC Vida e Ambiente, Universidade de Tras-os-Montes e Alto Douro, ap 1013, 5001-911 Vila Real (Portugal); Smith, S.R., E-mail: s.r.smith@imperial.ac.uk [Department of Civil and Environmental Engineering, Imperial College London, South Kensington Campus, London, SW7 2AZ (United Kingdom)

    2012-07-15

    Highlights: Black-Right-Pointing-Pointer Simple management techniques were examined for composting slurry solid fraction. Black-Right-Pointing-Pointer Composting slurry solids was effective without bulking agents, turning or rewetting. Black-Right-Pointing-Pointer Maximum rates of organic matter destruction were observed in short piles. Black-Right-Pointing-Pointer Thermophilic temperatures in tall piles maximised sanitation and moisture reduction. Black-Right-Pointing-Pointer The simple compost management approach maximised N retention and agronomic value. - Abstract: Composting technologies and control systems have reached an advanced stage of development, but these are too complex and expensive for most agricultural practitioners for treating livestock slurries. The development of simple, but robust and cost-effective techniques for composting animal slurries is therefore required to realise the potential benefits of waste sanitation and soil improvement associated with composted livestock manures. Cattle slurry solid fraction (SF) was collected at the rates of 4 m{sup 3} h{sup -1} and 1 m{sup 3} h{sup -1} and composted in tall (1.7 m) and short (1.2 m) static piles, to evaluate the physicochemical characteristics and nutrient dynamics of SF during composting without addition of bulking agent materials, and without turning or water addition. Highest maximum temperatures (62-64 Degree-Sign C) were measured in tall piles compared to short piles (52 Degree-Sign C). However, maximum rates of organic matter (OM) destruction were observed at mesophilic temperature ranges in short piles, compared to tall piles, whereas thermophilic temperatures in tall piles maximised sanitation and enhanced moisture reduction. Final OM losses were within the range of 520-660 g kg{sup -1} dry solids and the net loss of OM significantly (P < 0.001) increased nutrient concentrations during the composting period. An advanced degree of stabilization of the SF was indicated by low final

  18. Propriété de soi et indifférence morale du rapport à soi

    Directory of Open Access Journals (Sweden)

    Nathalie Maillard Romagnoli

    2011-05-01

    Full Text Available Je m’interroge dans cet article sur les implications du principe libertarien de la pleine propriété de soi sur la question du rapport moral à soi-même. À travers le principe de la pleine propriété de soi, les libertariens défendent la liberté entière de chacun de vivre comme il l���entend, pourvu que les droits des autres soient respectés. Apparemment, ce principe n’a pas grand-chose à nous dire sur ce que nous sommes moralement autorisés à nous faire à nous-mêmes ou non. Certains libertariens, comme Vallentyne, soutiennent toutefois que le principe de la pleine propriété de soi est incompatible avec l’existence de devoirs envers soi. La pleine propriété de soi impliquerait l’indifférence morale du rapport à soi. Je soutiens dans cet article que le principe de la pleine propriété de soi n’implique pas que ce que nous nous faisons à nous-mêmes soit moralement indifférent. Je veux aussi montrer que même si les libertariens, et en particulier Vallentyne, soutiennent la thèse de l’indifférence morale du rapport à soi, celle-ci n’est pas liée à la thèse de la pleine propriété de soi, mais bien plutôt à leur subjectivisme moral.ABSTRACTI ask in this article what the libertarian principle of full self-ownership has to say about volontary actions directed towards oneself. Through the principle of full self-ownership, libertarians defend the persons’ individual liberty to live as they choose to do, as long as they don’t infringe on the rights of others. Apparently, this principle doesn’t have much to say about what we are morally allowed to do to ourselves or not. Some libertarians, however, like Vallentyne, maintain that, if we have duties or obligations to ourselves, then we cannot be full self-owner. In this perspective, full self-ownership would imply that what we do to ourselves is morally indifferent. I want to show in this article that full self-ownership is compatible with the

  19. DOUBLE BOSS SCULPTURED DIAPHRAGM EMPLOYED PIEZORESISTIVE MEMS PRESSURE SENSOR WITH SILICON-ON-INSULATOR (SOI

    Directory of Open Access Journals (Sweden)

    D. SINDHANAISELVI

    2017-07-01

    Full Text Available This paper presents the detailed study on the measurement of low pressure sensor using double boss sculptured diaphragm of piezoresistive type with MEMS technology in flash flood level measurement. The MEMS based very thin diaphragms to sense the low pressure is analyzed by introducing supports to achieve linearity. The simulation results obtained from Intellisuite MEMS CAD design tool show that very thin diaphragms with rigid centre or boss give acceptable linearity. Further investigations on very thin diaphragms embedded with piezoresistor for low pressure measurement show that it is essential to analyse the piezoresistor placement and size of piezoresistor to achieve good sensitivity. A modified analytical modelling developed in this study for double boss sculptured diaphragm results were compared with simulated results. Further the enhancement of sensitivity is analyzed using non uniform thickness diaphragm and Silicon-On-Insulator (SOI technique. The simulation results indicate that the double boss square sculptured diaphragm with SOI layer using 0.85μm thickness yields the higher voltage sensitivity, acceptable linearity with Small Scale Deflection.

  20. Development of an X-ray imaging system with SOI pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Ryutaro, E-mail: ryunishi@post.kek.jp [School of High Energy Accelerator Science, SOKENDAI (The Graduate University for Advanced Studies), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Arai, Yasuo; Miyoshi, Toshinobu [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Organization (KEK-IPNS), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Hirano, Keiichi; Kishimoto, Shunji; Hashimoto, Ryo [Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK-IMSS), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

    2016-09-21

    An X-ray imaging system employing pixel sensors in silicon-on-insulator technology is currently under development. The system consists of an SOI pixel detector (INTPIX4) and a DAQ system based on a multi-purpose readout board (SEABAS2). To correct a bottleneck in the total throughput of the DAQ of the first prototype, parallel processing of the data taking and storing processes and a FIFO buffer were implemented for the new DAQ release. Due to these upgrades, the DAQ throughput was improved from 6 Hz (41 Mbps) to 90 Hz (613 Mbps). The first X-ray imaging system with the new DAQ software release was tested using 33.3 keV and 9.5 keV mono X-rays for three-dimensional computerized tomography. The results of these tests are presented. - Highlights: • The X-ray imaging system employing the SOI pixel sensor is currently under development. • The DAQ of the first prototype has the bottleneck in the total throughput. • The new DAQ release solve the bottleneck by parallel processing and FIFO buffer. • The new DAQ release was tested using 33.3 keV and 9.5 keV mono X-rays.

  1. Mixed logic style adder circuit designed and fabricated using SOI substrate for irradiation-hardened experiment

    Science.gov (United States)

    Yuan, Shoucai; Liu, Yamei

    2016-08-01

    This paper proposed a rail to rail swing, mixed logic style 28-transistor 1-bit full adder circuit which is designed and fabricated using silicon-on-insulator (SOI) substrate with 90 nm gate length technology. The main goal of our design is space application where circuits may be damaged by outer space radiation; so the irradiation-hardened technique such as SOI structure should be used. The circuit's delay, power and power-delay product (PDP) of our proposed gate diffusion input (GDI)-based adder are HSPICE simulated and compared with other reported high-performance 1-bit adder. The GDI-based 1-bit adder has 21.61% improvement in delay and 18.85% improvement in PDP, over the reported 1-bit adder. However, its power dissipation is larger than that reported with 3.56% increased but is still comparable. The worst case performance of proposed 1-bit adder circuit is also seen to be less sensitive to variations in power supply voltage (VDD) and capacitance load (CL), over a wide range from 0.6 to 1.8 V and 0 to 200 fF, respectively. The proposed and reported 1-bit full adders are all layout designed and wafer fabricated with other circuits/systems together on one chip. The chip measurement and analysis has been done at VDD = 1.2 V, CL = 20 fF, and 200 MHz maximum input signal frequency with temperature of 300 K.

  2. Simple technologies for on-farm composting of cattle slurry solid fraction.

    Science.gov (United States)

    Brito, L M; Mourão, I; Coutinho, J; Smith, S R

    2012-07-01

    Composting technologies and control systems have reached an advanced stage of development, but these are too complex and expensive for most agricultural practitioners for treating livestock slurries. The development of simple, but robust and cost-effective techniques for composting animal slurries is therefore required to realise the potential benefits of waste sanitation and soil improvement associated with composted livestock manures. Cattle slurry solid fraction (SF) was collected at the rates of 4m(3)h(-1) and 1m(3)h(-1) and composted in tall (1.7 m) and short (1.2m) static piles, to evaluate the physicochemical characteristics and nutrient dynamics of SF during composting without addition of bulking agent materials, and without turning or water addition. Highest maximum temperatures (62-64 °C) were measured in tall piles compared to short piles (52 °C). However, maximum rates of organic matter (OM) destruction were observed at mesophilic temperature ranges in short piles, compared to tall piles, whereas thermophilic temperatures in tall piles maximised sanitation and enhanced moisture reduction. Final OM losses were within the range of 520-660 g kg(-1) dry solids and the net loss of OM significantly (Pcomposting period. An advanced degree of stabilization of the SF was indicated by low final pile temperatures and C/N ratio, low concentrations of NH(4)(+) and increased concentrations of NO(3)(-) in SF composts. The results indicated that minimum intervention composting of SF in static piles over 168 days can produce agronomically effective organic soil amendments containing significant amounts of OM (772-856 g kg(-1)) and plant nutrients. The implications of a minimal intervention management approach to composting SF on compost pathogen reduction are discussed and possible measures to improve sanitation are suggested. Copyright © 2012 Elsevier Ltd. All rights reserved.

  3. A novel SOI pressure sensor for high temperature application

    International Nuclear Information System (INIS)

    Li Sainan; Liang Ting; Wang Wei; Hong Yingping; Zheng Tingli; Xiong Jijun

    2015-01-01

    The silicon on insulator (SOI) high temperature pressure sensor is a novel pressure sensor with high-performance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper. The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350 °C in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors. (semiconductor devices)

  4. Ultra compact triplexing filters based on SOI nanowire AWGs

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Jiashun; An Junming; Zhao Lei; Song Shijiao; Wang Liangliang; Li Jianguang; Wang Hongjie; Wu Yuanda; Hu Xiongwei, E-mail: junming@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2011-04-15

    An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion. (semiconductor devices)

  5. Ultra compact triplexing filters based on SOI nanowire AWGs

    International Nuclear Information System (INIS)

    Zhang Jiashun; An Junming; Zhao Lei; Song Shijiao; Wang Liangliang; Li Jianguang; Wang Hongjie; Wu Yuanda; Hu Xiongwei

    2011-01-01

    An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion. (semiconductor devices)

  6. Ultra compact triplexing filters based on SOI nanowire AWGs

    Science.gov (United States)

    Jiashun, Zhang; Junming, An; Lei, Zhao; Shijiao, Song; Liangliang, Wang; Jianguang, Li; Hongjie, Wang; Yuanda, Wu; Xiongwei, Hu

    2011-04-01

    An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion.

  7. Improvement of SOI microdosimeter performance using pulse shape discrimination techniques

    International Nuclear Information System (INIS)

    Cornelius, I.

    2002-01-01

    Full text: Microdosimetry is used to study the radiobiological properties of densely ionising radiations encountered in hadron therapy and space environments by measuring energy deposition in microscopic volumes. The creation of a solid state microdosimeter to replace the traditional tissue equivalent proportional counter is a topic of ongoing research. The Centre for Medical Radiation Physics has been investigating a technique using microscopic arrays of reverse biased pn junctions to measure the linear energy transfer of ions. A prototype silicon-on-insulator (SOI) microdosimeter was developed and measurements were conducted at boron neutron capture therapy, proton therapy, and fast neutron therapy facilities. Previous studies have shown the current microdosimeter possesses a poorly defined sensitive volume, a consequence of charge collection events being measured for ion strikes outside the pn junction via the diffusion of charge carriers. As a result, the amount of charge collected by the microdosimeter following an ion strike has a strong dependence on the location of the strike on the device and the angle of incidence of the ion. The aim of this work was to investigate the use of pulse shape discrimination (PSD) techniques to preclude the acquisition of events resulting from ion strikes outside the depletion region of the pn junction. Experiments were carried out using the Heavy Ion Microprobe (HIMP) at the Australian Nuclear Science and Technology Organisation, Lucas Heights, Australia. The HIMP was used to measure the charge collection time as a function of ion strike location on the microdosimeter array. As expected, the charge collection time was seen to increase monotonically as the distance of the ion strike from the junction increased. The charge collection time corresponding to ion strikes within the junction was determined. Through use of suitable electronics it was possible to gate the charge collection signal based on simultaneous measurements of

  8. Indium arsenide-on-SOI MOSFETs with extreme lattice mismatch

    Science.gov (United States)

    Wu, Bin

    Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have been used to explore the growth of InAs on Si. Despite 11.6% lattice mismatch, planar InAs structures have been observed by scanning electron microscopy (SEM) when nucleating using MBE on patterned submicron Si-on-insulator (SOI) islands. Planar structures of size as large as 500 x 500 nm 2 and lines of width 200 nm and length a few microns have been observed. MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 x 100 nm2. By choosing SOI as the growth template, selective growth is enabled by MOCVD. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island. Observed from transmission electron diffraction (TED) patterns, the lattice mismatch of 17/5 nm InAs/Si island reduces from 11.2 to 4.2% after being annealed at 800°C for 30 minutes. High-k Al2O3 dielectrics have been deposited by both electron-beam-enabled physical vapor deposition (PVD) and atomic layer deposition (ALD). Films from both techniques show leakage currents on the order of 10-9A/cm2, at ˜1 MV/cm electric field, breakdown field > ˜6 MV/cm, and dielectric constant > 6, comparable to those of reported ALD prior arts by Groner. The first MOSFETs with extreme lattice mismatch InAs-on-SOI channels using PVD Al2O3 as the gate dielectric are characterized. Channel recess was used to improve the gate control of the drain current.

  9. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    Science.gov (United States)

    Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

    2014-06-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

  10. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    International Nuclear Information System (INIS)

    Cui Jie; Chen Lei; Liu Yi; Zhao Peng; Niu Xu

    2014-01-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than −45 dB isolation and maximum −103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator. (semiconductor integrated circuits)

  11. Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

    Science.gov (United States)

    Ramezani, Zeinab; Orouji, Ali A.

    2016-10-01

    For achieving reliable transistor, we investigate an amended channel doping (ACD) engineering which improves the electrical and thermal performances of fully-depleted silicon-on-insulator (SOI) MOSFET. We have called the proposed structure with the amended channel doping engineering as ACD-SOI structure and compared it with a conventional fully-depleted SOI MOSFET (C-SOI) with uniform doping distribution using 2-D ATLAS simulator. The amended channel doping is a vertical graded doping that is distributed from the surface of structure with high doping density to the bottom of channel, near the buried oxide, with low doping density. Short channel effects (SCEs) and leakage current suppress due to high barrier height near the source region and electric field modification in the ACD-SOI in comparison with the C-SOI structure. Furthermore, by lower electric field and electron temperature near the drain region that is the place of hot carrier generation, we except the improvement of reliability and gate induced drain lowering (GIDL) in the proposed structure. Undesirable Self heating effect (SHE) that become a critical challenge for SOI MOSFETs is alleviated in the ACD-SOI structure because of utilizing low doping density near the buried oxide. Thus, refer to accessible results, the ACD-SOI structure with graded distribution in vertical direction is a reliable device especially in low power and high temperature applications.

  12. Ultrabroadband Hybrid III-V/SOI Grating Reflector for On-chip Lasers

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug

    2016-01-01

    We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability.......We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability....

  13. A Simple Guide to Enhancing Learning through Web 2.0 Technologies

    Science.gov (United States)

    Nichol, David; Hunter, Julie; Yaseen, Jonathan; Prescott-Clements, Linda

    2012-01-01

    This article describes the potential of new and emerging learning technologies to promote excellence in learning and teaching and further seeks to respond positively to the key trends in learning technologies for the higher education community. Through this article, we hope to positively enrich the student experience with technology-enhanced…

  14. Design and simulation of resistive SOI CMOS micro-heaters for high temperature gas sensors

    International Nuclear Information System (INIS)

    Iwaki, T; Covington, J A; Udrea, F; Ali, S Z; Guha, P K; Gardner, J W

    2005-01-01

    This paper describes the design of doped single crystal silicon (SCS) microhotplates for gas sensors. Resistive heaters are formed by an n+/p+ implantation into a Silicon-On-Insulator (SOI) wafer with a post-CMOS deep reactive ion etch to remove the silicon substrate. Hence they are fully compatible with CMOS technologies and allows for the integration of associated drive/detection circuitry. 2D electro-thermal models have been constructed and the results of numerical simulations using FEMLAB[reg] are given. Simulations show these micro-hotplates can operate at temperatures of 500 deg. C with a drive voltage of only 5 V and a power consumption of less than 100 mW

  15. Development of Gravity Acceleration Measurement Using Simple Harmonic Motion Pendulum Method Based on Digital Technology and Photogate Sensor

    Science.gov (United States)

    Yulkifli; Afandi, Zurian; Yohandri

    2018-04-01

    Development of gravitation acceleration measurement using simple harmonic motion pendulum method, digital technology and photogate sensor has been done. Digital technology is more practical and optimizes the time of experimentation. The pendulum method is a method of calculating the acceleration of gravity using a solid ball that connected to a rope attached to a stative pole. The pendulum is swung at a small angle resulted a simple harmonic motion. The measurement system consists of a power supply, Photogate sensors, Arduino pro mini and seven segments. The Arduino pro mini receives digital data from the photogate sensor and processes the digital data into the timing data of the pendulum oscillation. The calculation result of the pendulum oscillation time is displayed on seven segments. Based on measured data, the accuracy and precision of the experiment system are 98.76% and 99.81%, respectively. Based on experiment data, the system can be operated in physics experiment especially in determination of the gravity acceleration.

  16. A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect

    Science.gov (United States)

    Ghaffari, Majid; Orouji, Ali A.

    2018-06-01

    Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.

  17. Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad

    2009-01-01

    Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures

  18. Une dialectique de la pudeur : les pratiques de mise en visibilité de soi sur Facebook

    OpenAIRE

    Mell , Laurent

    2017-01-01

    L’amplification des usages des technologies de l’information et de la communication (TIC), et plus particulièrement des réseaux socionumériques, ont induit des évolutions significatives dans le rapport des individus aux normes relatives à la pudeur. Dans cet article, nous proposons de discuter des pratiques de mise en visibilité de soi sur le réseau socionumérique Facebook. Tout d’abord, nous montrons que l’augmentation de la considération pour la vie privée amène à une sélection des informat...

  19. Research on SOI-based micro-resonator devices

    Science.gov (United States)

    Xiao, Xi; Xu, Haihua; Hu, Yingtao; Zhou, Liang; Xiong, Kang; Li, Zhiyong; Li, Yuntao; Fan, Zhongchao; Han, Weihua; Yu, Yude; Yu, Jinzhong

    2010-10-01

    SOI (silicon-on-insulator)-based micro-resonator is the key building block of silicon photonics, which is considered as a promising solution to alleviate the bandwidth bottleneck of on-chip interconnects. Silicon-based sub-micron waveguide, microring and microdisk devices are investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main progress in recent years is presented in this talk, such as high Q factor single mode microdisk filters, compact thirdorder microring filters with the through/drop port extinctions to be ~ 30/40 dB, fast microring electro-optical switches with the switch time of 10 Gbit/s high speed microring modulators.

  20. Hybrid III-V/SOI resonant cavity enhanced photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

    2016-01-01

    A hybrid III–V/SOI resonant-cavity-enhanced photodetector (RCE-PD) structure comprising a high-contrast grating (HCG) reflector, a hybrid grating (HG) reflector, and an air cavity between them, has been proposed and investigated. In the proposed structure, a light absorbing material is integrated...... as part of the HG reflector, enabling a very compact vertical cavity. Numerical investigations show that a quantum efficiency close to 100 % and a detection linewidth of about 1 nm can be achieved, which are desirable for wavelength division multiplexing applications. Based on these results, a hybrid RCE...

  1. Inverse Design of a SOI T-junction Polarization Beamsplitter

    Science.gov (United States)

    Ye, Zi; Qiu, Jifang; Meng, Chong; Zheng, Li; Dong, Zhenli; Wu, Jian

    2017-06-01

    A SOI T-junction polarization beamsplitter with an ultra-compact footprint of 2.8×2.8μm2 is designed based on the method of inverse design. Simulated results show that the conversion efficiencies for TE and TM lights are 73.34% (simulated insertion loss of 2dB) and 80.4% (simulated insertion loss of 1.7dB) at 1550nm, respectively; the simulated extinction ratios for TE and TM lights are 19.3dB and 13.99dB at 1558nm, respectively.

  2. The founder of the Friends Foundation--Tessie Soi.

    Science.gov (United States)

    Topurua, Ore

    2013-01-01

    Tessie Soi is well known in Papua New Guinea and beyond for her work with HIV/AIDS (human immunodeficiency virus/acquired immune deficiency syndrome) patients, including through the Friends Foundation, an organization that focuses on helping families affected by HIV and AIDS. This article explores Tessie's early life and childhood, providing insight into some of the values she learned from her parents. Providing details about the Friends Foundation and the Orphan Buddy Systems program, a program Tessie established to support AIDS orphans, the article offers insight into Tessie's beliefs and compassion, simultaneously highlighting the value she places on her family.

  3. Worst-Case Bias During Total Dose Irradiation of SOI Transistors

    International Nuclear Information System (INIS)

    Ferlet-Cavrois, V.; Colladant, T.; Paillet, P.; Leray, J.-L; Musseau, O.; Schwank, James R.; Shaneyfelt, Marty R.; Pelloie, J.L.; Du Port de Poncharra, J.

    2000-01-01

    The worst case bias during total dose irradiation of partially depleted SOI transistors (from SNL and from CEA/LETI) is correlated to the device architecture. Experiments and simulations are used to analyze SOI back transistor threshold voltage shift and charge trapping in the buried oxide

  4. Very Low NF, High DR Heterodyne RF Lightwave Links Using a Simple, Versatile Photonic Integration Technology

    National Research Council Canada - National Science Library

    Forrest, Stephen R

    2006-01-01

    ...: Demonstration of a versatile integration technology based on the asymmetric twin waveguide platform that allowed for the realization of a broad range of components useful in RF photonic components...

  5. Improving breakdown voltage performance of SOI power device with folded drift region

    Science.gov (United States)

    Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

    2016-07-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

  6. Acceptance and introduction of disruptive technologies - simple steps to build a fully functional pulmonary valved stent.

    Science.gov (United States)

    Huber, Christoph H; Marty, Bettina; von Segesser, Ludwig K

    2007-08-01

    Valved stents are new land for cardiac surgeons even though they are being used more frequently by interventional disciplines. This paper presents simple steps to build a patient-specific pulmonary valved stent and its delivery device. The design concept was tested by random participants at a med-tech meeting. The valved stent is constructed by linking an endoprosthetic graft with a valved-jugular-vein. The delivery device is made from a modified 5-ml syringe. Of 72 participants, 66 (92%) built and 60 participants implanted the device successfully into the targeted pulmonary position via a trans-infundibular access.

  7. A graphene spin diode based on Rashba SOI

    International Nuclear Information System (INIS)

    Mohammadpour, Hakimeh

    2015-01-01

    In this paper a graphene-based two-terminal electronic device is modeled for application in spintronics. It is based on a gapped armchair graphene nanoribbon (GNR). The electron transport is considered through a scattering or channel region which is sandwiched between two lateral semi-infinite ferromagnetic leads. The two ferromagnetic leads, being half-metallic, are supposed to be in either parallel or anti-parallel magnetization. Meanwhile, the central channel region is a normal layer under the influence of the Rashba SOI, induced e.g., by the substrate. The device operation is based on modulating the (spin-) current by tuning the strength of the RSOI. The resultant current, being spin-polarized, is controlled by the RSOI in mutual interplay with the channel length. Inverting alternating bias voltage to a fully rectified spin-current is the main achievement of this paper. - Highlights: • Graphene-based electronic device is modeled with ferromagnetic leads. • The device operation is based on modulating the (spin-) current by Rashba SOI. • Inverting alternating bias voltage to rectified spin-current is the main achievement

  8. Simple technologies and diverse food strategies of the Late Pleistocene and Early Holocene at Huaca Prieta, Coastal Peru.

    Science.gov (United States)

    Dillehay, Tom D; Goodbred, Steve; Pino, Mario; Vásquez Sánchez, Víctor F; Tham, Teresa Rosales; Adovasio, James; Collins, Michael B; Netherly, Patricia J; Hastorf, Christine A; Chiou, Katherine L; Piperno, Dolores; Rey, Isabel; Velchoff, Nancy

    2017-05-01

    Simple pebble tools, ephemeral cultural features, and the remains of maritime and terrestrial foods are present in undisturbed Late Pleistocene and Early Holocene deposits underneath a large human-made mound at Huaca Prieta and nearby sites on the Pacific coast of northern Peru. Radiocarbon ages indicate an intermittent human presence dated between ~15,000 and 8000 calendar years ago before the mound was built. The absence of fishhooks, harpoons, and bifacial stone tools suggests that technologies of gathering, trapping, clubbing, and exchange were used primarily to procure food resources along the shoreline and in estuarine wetlands and distant mountains. The stone artifacts are minimally worked unifacial stone tools characteristic of several areas of South America. Remains of avocado, bean, and possibly cultivated squash and chile pepper are also present, suggesting human transport and consumption. Our new findings emphasize an early coastal lifeway of diverse food procurement strategies that suggest detailed observation of resource availability in multiple environments and a knowledgeable economic organization, although technologies were simple and campsites were seemingly ephemeral and discontinuous. These findings raise questions about the pace of early human movement along some areas of the Pacific coast and the level of knowledge and technology required to exploit maritime and inland resources.

  9. Two Persons with Multiple Disabilities Use Orientation Technology with Auditory Cues to Manage Simple Indoor Traveling

    Science.gov (United States)

    Lancioni, Giulio E.; Singh, Nirbhay N.; O'Reilly, Mark F.; Sigafoos, Jeff; Campodonico, Francesca; Oliva, Doretta

    2010-01-01

    This study was an effort to extend the evaluation of orientation technology for promoting independent indoor traveling in persons with multiple disabilities. Two participants (adults) were included, who were to travel to activity destinations within occupational settings. The orientation system involved (a) cueing sources only at the destinations…

  10. Public support for energy sources and related technologies: The impact of simple information provision

    International Nuclear Information System (INIS)

    Hobman, Elizabeth V.; Ashworth, Peta

    2013-01-01

    Increasing public awareness and understanding of alternative energy sources and related technologies is an essential component of informed decision-making regarding new options of generating energy for a low carbon future. The current study examined the influence of psychological factors (i.e., pro-environmental beliefs, and subjective norms) and the provision of factual information on public support for a range of energy sources and related technologies. A representative sample of 1907 Australians completed an on-line survey that measured perceptions of a range of climate change and energy issues. Results showed that support for renewables is stronger than support for traditional fossil-fuel based energy sources (i.e., coal or gas) or nuclear energy. The provision of factual information about generation cost and emissions significantly changed support ratings, particularly when cost information was provided. Regression analyses revealed that pro-environmental beliefs were significantly related to support ratings for alternative energy sources. Subjective norms, however, were the strongest positive explanatory factor, suggesting that social mechanisms may be key drivers of support for new and emerging energy sources and related technologies. - Highlights: • We examine support for a wide range of energy sources and technologies. • Support changes when information on cost and emissions is provided. • Pro-environmental beliefs and social norms positively relate to support

  11. The importance of using simple and indigenous technologies for the exploitation of water resources in rural areas of developing countries

    Science.gov (United States)

    Faillace, C.

    Taking care of thousands of village water supply systems requires a large organization and large financial inputs which most developing countries cannot afford. The author, after having briefly outlined the main points to be considered for the implementation of successful rural water programs, stresses the need to introduce simple, low-cost technologies for supplying safe water to small rural villages. The risk of failure is greatly reduced if there is an active participation of villagers in the various phases of the project. Health education village sanitation and training in the use and repair of equipment are essential for the long life of the water systems.

  12. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    International Nuclear Information System (INIS)

    Zhang Jun; Guo Yu-Feng; Xu Yue; Lin Hong; Yang Hui; Hong Yang; Yao Jia-Fei

    2015-01-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device. (paper)

  13. Méditation et pratique de soi chez Malebranche.

    Directory of Open Access Journals (Sweden)

    Éric Dubreucq

    2004-04-01

    Full Text Available Une étude des Méditations pour se disposer à l’Humilité et à la pénitence qui les replace dans le cadre des pratiques de son époque, par exemple, chez François de Sales, celles de l’oraison, de la méditation et de la contemplation, permet d’apercevoir que l’une des thèses majeures du malebranchisme, la vision en Dieu, est un effet instauré dans le destinataire par un dispositif textuel. Celui-ci tire sa puissance prescriptive de l’a priori pratique où il s’inscrit. C’est à une opération de production de soi que l’exercice spirituel donne lieu : l’analyse des quatre premières Méditations chrétiennes et métaphysiques, en particulier, montre que c’est une organisation de la substance personnelle que provoque le travail spirituel sur soi. Celui-ci consiste à déterminer le rapport à soi comme relation d’une vision attentive à une activité illuminante, par un décentrement textuel du « je » vers le « tu ».One of the major Malebranche’s assertion, that we see truth in God, is not a mere theoretical thesis. I study first the Méditations pour se disposer à l’Humilité et à la pénitence and compare them with François de Sales’ spiritual exercitations, and show that prayer, meditation and contemplation constitute the practical frameworks of this period. The text of the Méditations is an apparatus which is fit to cause an effect in its target – the self of the reader : the vision in God. The practical a priori of the meditation provides the text with prescriptive power to transform the self. Then I study the Méditations chrétiennes et métaphysiques i-iv : we see that Malebranche set his textual apparatus so that it prescribes its receiver a form of « work-on-one’s-self ». The self is here produced by the organisation of relationship between attentive vision and lighting action, and this structure is built in the self by a movement, induced by the text, which leads the self from

  14. Architecting Graphene Oxide Rolled-Up Micromotors: A Simple Paper-Based Manufacturing Technology.

    Science.gov (United States)

    Baptista-Pires, Luis; Orozco, Jahir; Guardia, Pablo; Merkoçi, Arben

    2018-01-01

    A graphene oxide rolled-up tube production process is reported using wax-printed membranes for the fabrication of on-demand engineered micromotors at different levels of oxidation, thickness, and lateral dimensions. The resultant graphene oxide rolled-up tubes can show magnetic and catalytic movement within the addition of magnetic nanoparticles or sputtered platinum in the surface of graphene-oxide-modified wax-printed membranes prior to the scrolling process. As a proof of concept, the as-prepared catalytic graphene oxide rolled-up micromotors are successfully exploited for oil removal from water. This micromotor production technology relies on an easy, operator-friendly, fast, and cost-efficient wax-printed paper-based method and may offer a myriad of hybrid devices and applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. L’estime de soi : un cas particulier d’estime sociale ?

    OpenAIRE

    Santarelli, Matteo

    2016-01-01

    Un des traits plus originaux de la théorie intersubjective de la reconnaissance d’Axel Honneth, consiste dans la façon dont elle discute la relation entre estime sociale et estime de soi. En particulier, Honneth présente l’estime de soi comme un reflet de l’estime sociale au niveau individuel. Dans cet article, je discute cette conception, en posant la question suivante : l’estime de soi est-elle un cas particulier de l’estime sociale ? Pour ce faire, je me concentre sur deux problèmes crucia...

  16. Dating simple flakes: Early Bronze Age flake production technology on the Middle Euphrates Steppe, Syria

    Directory of Open Access Journals (Sweden)

    Yoshihiro Nishiaki

    2014-03-01

    Full Text Available Aceramic flint scatters, comprising very crude cores or flakes and no formalised tools, are frequently found on the Middle Euphrates steppe of northern Syria. Previous studies suggest that many of them are residues of short-term activities by the nomads or shepherds of the Early Bronze Age. In order to verify this interpretation, a more precise chronological framework needs to be established for the Early Bronze Age lithic industry. This paper analyses stratified flake assemblages of the Early Bronze Age at Tell Ghanem al-Ali, a securely radiocarbon-dated settlement on the Middle Euphrates, and examines which occupation level yields assemblages most similar to those of the steppe. Results demonstrate that the lithic industry of this period underwent significant diachronic changes in terms of core reduction technology. Based on the chronological framework developed at Tell Ghanem al-Ali, the steppe assemblages in question can be assigned to different phases of the Early Bronze Age. This finding will help identify processes at the beginning of the extensive exploitation of the steppe, which is regarded as one of the most important socioeconomic changes that occurred among Early Bronze Age communities of the Middle Euphrates.

  17. New Insights into Fully-Depleted SOI Transistor Response During Total Dose Irradiation

    International Nuclear Information System (INIS)

    Burns, J.A.; Dodd, P.E.; Keast, C.L.; Schwank, J.R.; Shaneyfelt, M.R.; Wyatt, P.W.

    1999-01-01

    Worst-case bias configuration for total-dose testing fully-depleted SOI transistors was found to be process dependent. No evidence was found for total-dose induced snap back. These results have implications for hardness assurance testing

  18. A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure

    Science.gov (United States)

    Tzeng, J. C.; Baerg, W.; Ting, C.; Siu, B.

    The morphology of the novel self-aligned oxygen implanted SOI (SALOX SOI) [1] MOSFET was studied. The channel silicon of SALOX SOI was confirmed to be undamaged single crystal silicon and was connected with the substrate. Buried oxide formed by oxygen implantation in this SALOX SOI structure was shown by a cross section transmission electron micrograph (X-TEM) to be amorphous. The source/drain silicon on top of the buried oxide was single crystal, as shown by the transmission electron diffraction (TED) pattern. The source/drain regions were elevated due to the buried oxide volume expansion. A sharp silicon—silicon dioxide interface between the source/drain silicon and buried oxide was observed by Auger electron spectroscopy (AES). Well behaved n-MOS transistor current voltage characteristics were obtained and showed no I-V kink.

  19. A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer

    International Nuclear Information System (INIS)

    Wu Lijuan; Zhang Wentong; Zhang Bo; Li Zhaoji

    2013-01-01

    A novel silicon-on-insulator (SOI) high-voltage pLDMOS is presented with a partial interface equipotential floating buried layer (FBL) and its analytical model is analyzed in this paper. The surface heavily doped p-top layers, interface floating buried N + /P + layers, and three-step field plates are designed carefully in the FBL SOI pLDMOS to optimize the electric field distribution of the drift region and reduce the specific resistance. On the condition of ESIMOX (epoxy separated by implanted oxygen), it has been shown that the breakdown voltage of the FBL SOI pLDMOS is increased from −232 V of the conventional SOI to −425 V and the specific resistance R on,sp is reduced from 0.88 to 0.2424 Ω·cm 2 . (semiconductor devices)

  20. Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

    Science.gov (United States)

    Zhao, Xiaofeng; Li, Dandan; Yu, Yang; Wen, Dianzhong

    2017-07-01

    Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors ({R}1, {R}2, {R}3 and {R}4) locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator (SOI) wafer by micro electromechanical system (MEMS) technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity (TCS) for the sensor before and after temperature compensation are -1862 and -1067 ppm/°C, respectively. Through varying the ratio of the base region resistances {r}1 and {r}2, the TCS for the sensor with the compensation circuit is -127 ppm/°C. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor. Project supported by the National Natural Science Foundation of China (No. 61471159), the Natural Science Foundation of Heilongjiang Province (No. F201433), the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province (No. 2015018), and the Special Funds for Science and Technology Innovation Talents of Harbin in China (No. 2016RAXXJ016).

  1. Approaches of multilayer overlay process control for 28nm FD-SOI derivative applications

    Science.gov (United States)

    Duclaux, Benjamin; De Caunes, Jean; Perrier, Robin; Gatefait, Maxime; Le Gratiet, Bertrand; Chapon, Jean-Damien; Monget, Cédric

    2018-03-01

    Derivative technology like embedded Non-Volatile Memories (eNVM) is raising new types of challenges on the "more than Moore" path. By its construction: overlay is critical across multiple layers, by its running mode: usage of high voltage are stressing leakages and breakdown, and finally with its targeted market: Automotive, Industry automation, secure transactions… which are all requesting high device reliability (typically below 1ppm level). As a consequence, overlay specifications are tights, not only between one layer and its reference, but also among the critical layers sharing the same reference. This work describes a broad picture of the key points for multilayer overlay process control in the case of a 28nm FD-SOI technology and its derivative flows. First, the alignment trees of the different flow options have been optimized using a realistic process assumptions calculation for indirect overlay. Then, in the case of a complex alignment tree involving heterogeneous scanner toolset, criticality of tool matching between reference layer and critical layers of the flow has been highlighted. Improving the APC control loops of these multilayer dependencies has been studied with simulations of feed-forward as well as implementing new rework algorithm based on multi-measures. Finally, the management of these measurement steps raises some issues for inline support and using calculations or "virtual overlay" could help to gain some tool capability. A first step towards multilayer overlay process control has been taken.

  2. Le soi et l’estime de soi chez l’enfant: Une revue systématique de la littérature

    OpenAIRE

    Pinto, Alexandra Maria Pereira Inácio Sequeira; Gatinho, Ana Rita dos Santos; Tereno, Susana; Veríssimo, Manuela

    2016-01-01

    Cette étude vise : a) à analyser les différentes méthodes utilisées pour l’étude du Soi et chez les enfants, en ce que concerne sa qualité et son potentiel et b) à synthétiser les résultats déjà obtenus en termes de Soi/d’estime de soi/d’autoconcept, pour les enfants en âge préscolaire. Après avoir établi des critères rigoureux d’inclusion et d’exclusion, 33 articles ont été sélectionnés, dans plusieurs bases de données, nationales et international...

  3. Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high-k SOI FinFET at 20 nm channel length

    Science.gov (United States)

    Jain, Neeraj; Raj, Balwinder

    2017-12-01

    Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity, short channel effects (SCEs), leakage currents, device variability and reliability etc. Nowadays, multigate structure has become the promising candidate to overcome these problems. SOI FinFET is one of the best multigate structures that has gained importance in all electronic design automation (EDA) industries due to its improved short channel effects (SCEs), because of its more effective gate-controlling capabilities. In this paper, our aim is to explore the sensitivity of underlap spacer region variation on the performance of SOI FinFET at 20 nm channel length. Electric field modulation is analyzed with spacer length variation and electrostatic performance is evaluated in terms of performance parameter like electron mobility, electric field, electric potential, sub-threshold slope (SS), ON current (I on), OFF current (I off) and I on/I off ratio. The potential benefits of SOI FinFET at drain-to-source voltage, V DS = 0.05 V and V DS = 0.7 V towards analog and RF design is also evaluated in terms of intrinsic gain (A V), output conductance (g d), trans-conductance (g m), gate capacitance (C gg), and cut-off frequency (f T = g m/2πC gg) with spacer region variations.

  4. Deep sub-micron FD-SOI for front-end application

    International Nuclear Information System (INIS)

    Ikeda, H.; Arai, Y.; Hara, K.; Hayakawa, H.; Hirose, K.; Ikegami, Y.; Ishino, H.; Kasaba, Y.; Kawasaki, T.; Kohriki, T.; Martin, E.; Miyake, H.; Mochizuki, A.; Tajima, H.; Tajima, O.; Takahashi, T.; Takashima, T.; Terada, S.; Tomita, H.; Tsuboyama, T.

    2007-01-01

    In order to confirm benefits of a deep sub-micron FD-SOI and to identify possible issues concerning front-end circuits with the FD-SOI, we have submitted a small design to Oki Electric Industry Co., Ltd. via the multi-chip project service of VDEC, the University of Tokyo. The initial test results and future plans for development are presented

  5. Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performance

    Science.gov (United States)

    Sarkar, Partha; Mallik, Abhijit; Sarkar, Chandan Kumar

    2009-03-01

    In this paper, with the help of extensive TCAD simulations, we investigate the analog performance of source/drain on depletion layer (SDODEL) MOSFETs with a single-halo (SH) implant near the source side of the channel. We use the SH implant in such a structure for the first time. The analog performance parameters in SH SDODEL MOSFETs are compared to those in SH MOSFETs as well as in SH SOI MOSFETs. In addition to reduced junction capacitance for the SH SDODEL structure as compared to that in bulk SH devices, it has been shown that such devices lead to improved performance and lower power dissipation for sub-100 nm CMOS technologies. Our results show that, in SH SDODEL MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, gm/ID, etc) for the sub-100 nm technologies.

  6. Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performance

    International Nuclear Information System (INIS)

    Sarkar, Partha; Mallik, Abhijit; Sarkar, Chandan Kumar

    2009-01-01

    In this paper, with the help of extensive TCAD simulations, we investigate the analog performance of source/drain on depletion layer (SDODEL) MOSFETs with a single-halo (SH) implant near the source side of the channel. We use the SH implant in such a structure for the first time. The analog performance parameters in SH SDODEL MOSFETs are compared to those in SH MOSFETs as well as in SH SOI MOSFETs. In addition to reduced junction capacitance for the SH SDODEL structure as compared to that in bulk SH devices, it has been shown that such devices lead to improved performance and lower power dissipation for sub-100 nm CMOS technologies. Our results show that, in SH SDODEL MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, g m /I D , etc) for the sub-100 nm technologies

  7. Generation and confinement of mobile charges in buried oxide of SOI substrates; Generation et confinement de charges mobiles dans les oxydes enterres de substrats SOI

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, O.; Krawiec, S.; Musseau, O.; Paillet, Ph.; Courtot-Descharles, A. [CEA Bruyeres-le-Chatel, DIF, 91 (France)

    1999-07-01

    We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. This study of the mechanisms of generation and confinement of mobile protons in the buried oxide of SOI wafers emphasizes the importance of H+ diffusion in the oxide in the formation of a mobile charge. Under specific electric field conditions the irradiation of these devices results in a pinning of this mobile charge at the bottom Si-SiO{sub 2} interface. Ab initio calculations are in progress to investigate the possible precursor defects in the oxide and detail the mechanism for mobile proton generation and confinement. (authors)

  8. Analysis and modeling of wafer-level process variability in 28 nm FD-SOI using split C-V measurements

    Science.gov (United States)

    Pradeep, Krishna; Poiroux, Thierry; Scheer, Patrick; Juge, André; Gouget, Gilles; Ghibaudo, Gérard

    2018-07-01

    This work details the analysis of wafer level global process variability in 28 nm FD-SOI using split C-V measurements. The proposed approach initially evaluates the native on wafer process variability using efficient extraction methods on split C-V measurements. The on-wafer threshold voltage (VT) variability is first studied and modeled using a simple analytical model. Then, a statistical model based on the Leti-UTSOI compact model is proposed to describe the total C-V variability in different bias conditions. This statistical model is finally used to study the contribution of each process parameter to the total C-V variability.

  9. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-03

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  10. Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

    Science.gov (United States)

    Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

    2018-05-01

    Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

  11. Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

    Science.gov (United States)

    Irom, Farokh; Farmanesh, Farhad; Kouba, Coy K.

    2006-01-01

    Single-event upset effects from heavy ions are measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes. The results are compared with previous results for SOI microprocessors with feature sizes of 130 and 180 nm. The cross section of the 90 nm SOI processors is smaller than results for 130 and 180 nm counterparts, but the threshold is about the same. The scaling of the cross section with reduction of feature size and core voltage for SOI microprocessors is discussed.

  12. Investigation of AWG demultiplexer based SOI for CWDM application

    Directory of Open Access Journals (Sweden)

    Juhari Nurjuliana

    2017-01-01

    Full Text Available 9-channel Arrayed Waveguide Grating (AWG demultiplexer for conventional and tapered structure were simulated using beam propagation method (BPM with channel spacing of 20 nm. The AWG demultiplexer was design using high refractive index (n~3.47 material namely silicon-on-insulator (SOI with rib waveguide structure. The characteristics of insertion loss, adjacent crosstalk and output spectrum response at central wavelength of 1.55 μm for both designs were compared and analyzed. The conventional AWG produced a minimum insertion loss of 6.64 dB whereas the tapered AWG design reduced the insertion loss by 2.66 dB. The lowest adjacent crosstalk value of -16.96 dB was obtained in the conventional AWG design and this was much smaller compared to the tapered AWG design where the lowest crosstalk value is -17.23 dB. Hence, a tapered AWG design significantly reduces the insertion loss but has a slightly higher adjacent crosstalk compared to the conventional AWG design. On the other hand, the output spectrum responses that are obtained from both designs were close to the Coarse Wavelength Division Multiplexing (CWDM wavelength grid.

  13. I-PFO: the new technology for simple and flexible implementation of high productive on-the-fly remote processes

    Science.gov (United States)

    Müllegger, Andreas; Ryba, Tracey

    2017-02-01

    Standardized production systems which can be implemented, programmed, maintained and sourced in a simple and efficient way are key for a successful global production of automobiles or related parts at component suppliers. This is also valid for systems, which are built by laser based processes. One of the key applications is remote laser welding (RLW) of "Body in White" (BIW) parts (such as hang-on parts, B-Pillars, side frames, etc.), but also builtin components (such as car seats, batteries, etc.). The majority of RLW applications are based on the implementation of a 3-D scanner optic (e.g. the PFO 3D from TRUMPF) which positions the laser beam on the various component surfaces to be welded. Over the past 10 years it has been proven that the most efficient way to build up the RLW process is to have a system where an industrial robot and a scanner optic are combined in one production cell. They usually cooperate within an "On-The-Fly" (OTF) process as this ensures minimum cycle times. Until now there are several technologies on the market which can coordinate both the robot and scanner in the OTF mode. But none of them meet all requirements of global standardized production solutions. With the introduction of the I-PFO (Intelligent Programmable Focusing Optics) technology the situation has changed. It is now possible to program or adopt complex remote processes in a fast and easy way by the "Teach-in" function via the robot teach pendant. Additionally a 3D offline designer software is an option for this system. It automatically creates the ideal remote process based on the part, fixture, production cell and required process parameters. The I-PFO technology doesn't need additional hardware due to the fact that it runs on the controller within the PFO 3D. Furthermore it works together with different types of industrial robots (e.g. ABB, Fanuc and KUKA) which allow highest flexibility for the production planning phase. Finally a single TRUMPF laser source can supply

  14. Proposal for fabrication-tolerant SOI polarization splitter-rotator based on cascaded MMI couplers and an assisted bi-level taper.

    Science.gov (United States)

    Wang, Jing; Qi, Minghao; Xuan, Yi; Huang, Haiyang; Li, You; Li, Ming; Chen, Xin; Jia, Qi; Sheng, Zhen; Wu, Aimin; Li, Wei; Wang, Xi; Zou, Shichang; Gan, Fuwan

    2014-11-17

    A novel silicon-on-insulator (SOI) polarization splitter-rotator (PSR) with a large fabrication tolerance is proposed based on cascaded multimode interference (MMI) couplers and an assisted mode-evolution taper. The tapers are designed to adiabatically convert the input TM(0) mode into the TE(1) mode, which will output as the TE(0) mode after processed by the subsequent MMI mode converter, 90-degree phase shifter (PS) and MMI 3 dB coupler. The numerical simulation results show that the proposed device has a silicon photonics technology.

  15. Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

    International Nuclear Information System (INIS)

    Luo Jie-Xin; Chen Jing; Zhou Jian-Hua; Wu Qing-Qing; Chai Zhan; Yu Tao; Wang Xi

    2012-01-01

    The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I D hysteresis has been developed to clarify the hysteresis characteristics. The fabricated devices show the positive and negative peaks in the I D hysteresis. The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias. Based on the steady-state Shockley-Read-Hall (SRH) recombination theory, we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs. (condensed matter: structural, mechanical, and thermal properties)

  16. A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

    Science.gov (United States)

    Nagase, Koichi; Wada, Takehiko; Ikeda, Hirokazu; Arai, Yasuo; Ohno, Morifumi; Hanaoka, Misaki; Kanada, Hidehiro; Oyabu, Shinki; Hattori, Yasuki; Ukai, Sota; Suzuki, Toyoaki; Watanabe, Kentaroh; Baba, Shunsuke; Kochi, Chihiro; Yamamoto, Keita

    2016-07-01

    We are developing a fully depleted silicon-on-insulator (FD-SOI) CMOS readout integrated circuit (ROIC) operated at temperatures below ˜ 4 K. Its application is planned for the readout circuit of high-impedance far-infrared detectors for astronomical observations. We designed a trans-impedance amplifier (TIA) using a CMOS operational amplifier (OPAMP) with FD-SOI technique. The TIA is optimized to readout signals from a germanium blocked impurity band (Ge BIB) detector which is highly sensitive to wavelengths of up to ˜ 200 \\upmu m. For the first time, we demonstrated the FD-SOI CMOS OPAMP combined with the Ge BIB detector at 4.5 K. The result promises to solve issues faced by conventional cryogenic ROICs.

  17. Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

    International Nuclear Information System (INIS)

    Wang, D.; Ueda, A.; Takada, H.; Nakashima, H.

    2006-01-01

    A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τ g ) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τ g measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission

  18. Simulation Opportunity Index, A Simple and Effective Method to Boost the Hydrocarbon Recovery

    KAUST Repository

    Saputra, Wardana

    2016-09-08

    During periods of low oil prices, profitability of field developments drops drastically. To help with this difficulty, a cost-effective method has been proposed to boost the hydrocarbon recovery by optimizing well locations through the Simulated Opportunity Index (SOI). SOI is an intelligent method to identify zones with high potential for production which is empirically calculated from basic rock and fluid properties, and from reservoir pressure as its energy capacity. In order to obtain the best results, the original SOI formula (Molina et al., 2009) was extended to both oil and gas fields. Based on this modified SOI formula, a software program has been developed to locate the best well locations considering multilayer, existing wells, and fault existences. This paper describes how the SOI software helps as a simple, fast, and accurate way to obtain the higher hydrocarbon production than that of trial-error method and previous studies in two different fields located in offshore Indonesia. On one hand, the proposed method could save money by minimizing the required number of wells. On the other hand, it could maximize profit by maximizing recovery.

  19. Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

    KAUST Repository

    Pirro, Luca; Diab, Amer El Hajj; Ionica, Irina; Ghibaudo, Gerard; Faraone, Lorenzo; Cristoloveanu, Sorin

    2015-01-01

    Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

  20. Simulation of dual-gate SOI MOSFET with different dielectric layers

    Science.gov (United States)

    Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

    2016-04-01

    The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

  1. Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

    KAUST Repository

    Pirro, Luca

    2015-09-01

    Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

  2. HARM processing techniques for MEMS and MOEMS devices using bonded SOI substrates and DRIE

    Science.gov (United States)

    Gormley, Colin; Boyle, Anne; Srigengan, Viji; Blackstone, Scott C.

    2000-08-01

    Silicon-on-Insulator (SOI) MEMS devices (1) are rapidly gaining popularity in realizing numerous solutions for MEMS, especially in the optical and inertia application fields. BCO recently developed a DRIE trench etch, utilizing the Bosch process, and refill process for high voltage dielectric isolation integrated circuits on thick SOI substrates. In this paper we present our most recently developed DRIE processes for MEMS and MOEMS devices. These advanced etch techniques are initially described and their integration with silicon bonding demonstrated. This has enabled process flows that are currently being utilized to develop optical router and filter products for fiber optics telecommunications and high precision accelerometers.

  3. Generation and confinement of mobile charges in buried oxide of SOI substrates

    International Nuclear Information System (INIS)

    Gruber, O.; Krawiec, S.; Musseau, O.; Paillet, Ph.; Courtot-Descharles, A.

    1999-01-01

    We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. This study of the mechanisms of generation and confinement of mobile protons in the buried oxide of SOI wafers emphasizes the importance of H+ diffusion in the oxide in the formation of a mobile charge. Under specific electric field conditions the irradiation of these devices results in a pinning of this mobile charge at the bottom Si-SiO 2 interface. Ab initio calculations are in progress to investigate the possible precursor defects in the oxide and detail the mechanism for mobile proton generation and confinement. (authors)

  4. Process Optimization for Monolithic Integration of Piezoresistive Pressure Sensor and MOSFET Amplifier with SOI Approach

    International Nuclear Information System (INIS)

    Kumar, V Vinoth; Dasgupta, A; Bhat, K N; KNatarajan

    2006-01-01

    In this paper we present the design and process optimization for fabricating piezoresitive pressure sensor and MOSFET Differential Amplifier simultaneously on the same chip. Silicon On Insulator approach has been used for realizing the membrane as well as the electronics on the same chip. The amplifier circuit has been configured in the common source connection and it has been designed with PSPICE simulation to achieve a voltage gain of about 5. In the initial set of experiments the Pressure sensor and the amplifier were fabricated on separate chips to optimize the process steps and tested in the hybrid mode. In the next set of experiments, SOI wafer having the SOI layer thickness of about 11 microns was used for realizing the membrane by anisotropic etching from the backside. The piezo-resistive pressure sensor was realized on this membrane by connecting the polysilicon resistors in the form of a Wheatstone bridge. The MOSFET source follower amplifier was also fabricated on the same SOI wafer by tailoring the process steps to suit the requirement of simultaneous fabrication of piezoresistors and the amplifier for achieving MOSFET Integrated Pressure Sensor. Reproducible results have been achieved on the SOI wafers, with the process steps developed in the laboratory. Sensitivity of 270 mV /Bar/10V, with the on chip amplifier gain of 4.5, has been achieved with this process

  5. Design and fabrication of piezoresistive p-SOI Wheatstone bridges for high-temperature applications

    Science.gov (United States)

    Kähler, Julian; Döring, Lutz; Merzsch, Stephan; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2011-06-01

    For future measurements while depth drilling, commercial sensors are required for a temperature range from -40 up to 300 °C. Conventional piezoresistive silicon sensors cannot be used at higher temperatures due to an exponential increase of leakage currents which results in a drop of the bridge voltage. A well-known procedure to expand the temperature range of silicon sensors and to reduce leakage currents is to employ Silicon-On-Insulator (SOI) instead of standard wafer material. Diffused resistors can be operated up to 200 °C, but show the same problems beyond due to leakage of the p-njunction. Our approach is to use p-SOI where resistors as well as interconnects are defined by etching down to the oxide layer. Leakage is suppressed and the temperature dependence of the bridges is very low (TCR = (2.6 +/- 0.1) μV/K@1 mA up to 400 °C). The design and process flow will be presented in detail. The characteristics of Wheatstone bridges made of silicon, n- SOI, and p-SOI will be shown for temperatures up to 300 °C. Besides, thermal FEM-simulations will be described revealing the effect of stress between silicon and the silicon-oxide layer during temperature cycling.

  6. The effect of gate length on SOI-MOSFETS operation | Baedi ...

    African Journals Online (AJOL)

    The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm were simulated. Simulations showed that with a fixed channel length, when the gate ...

  7. Extreme group index measured and calculated in 2D SOI-based photonic crystal waveguides

    DEFF Research Database (Denmark)

    Lavrinenko, Andrei; Jacobsen, Rune Shim; Fage-Pedersen, Jacob

    2005-01-01

    lattice of air-holes in the 216-nm thick silicon layer in an SOI material. Experimental transmission spectra show a mode cut-off around 1562.5 nm for the fundamental photonic bandgap mode. In order to measure and model the group index of modes in the PCW, a time-of-flight (ToF) method is applied....

  8. Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    : off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

  9. Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

    Science.gov (United States)

    Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

    2007-01-01

    We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

  10. Juan Goytisolo: Le soi, le monde et la création littéraire

    Directory of Open Access Journals (Sweden)

    Pablo Romero Alegría

    2010-01-01

    Full Text Available Reseña de la obra: Yannick Llored. Le soi, le monde et la création littéraire. Presses Universitaires du Septentrion. Villeneuve d’Ascq (Francia. 2009. 421 págs. ISBN: 978-2-75740-0089-0

  11. Rapid, simple and direct detection of Meloidogyne hapla from infected root galls using loop-mediated isothermal amplification combined with FTA technology

    OpenAIRE

    Peng, Huan; Long, Haibo; Huang, Wenkun; Liu, Jing; Cui, Jiangkuan; Kong, Lingan; Hu, Xianqi; Gu, Jianfeng; Peng, Deliang

    2017-01-01

    The northern root-knot nematode (Meloidogyne hapla) is a damaging nematode that has caused serious economic losses worldwide. In the present study, a sensitive, simple and rapid method was developed for detection of M. hapla in infested plant roots by combining a Flinders Technology Associates (FTA) card with loop-mediated isothermal amplification (LAMP). The specific primers of LAMP were designed based on the distinction of internal transcribed spacer (ITS) sequences between M. hapla and oth...

  12. A High-Voltage SOI CMOS Exciter Chip for a Programmable Fluidic Processor System.

    Science.gov (United States)

    Current, K W; Yuk, K; McConaghy, C; Gascoyne, P R C; Schwartz, J A; Vykoukal, J V; Andrews, C

    2007-06-01

    waveform frequency is about 200 Hz; and standard 5-V CMOS logic data communication rate is variable up to 250 kHz. This HV demonstration chip is fabricated in a 130-V 1.0-mum SOI CMOS fabrication technology, dissipates a maximum of 1.87 W, and is about 10.4 mm x 8.2 mm.

  13. A PD-SOI based DTI-LOCOS combined cross isolation technique for minimizing TID radiation induced leakage in high density memory

    International Nuclear Information System (INIS)

    Qiao Fengying; Pan Liyang; Wu Dong; Liu Lifang; Xu Jun

    2014-01-01

    In order to minimize leakage current increase under total ionizing dose (TID) radiation in high density memory circuits, a new isolation technique, combining deep trench isolation (DTI) between the wells, local oxidation of silicon (LOCOS) isolation between the devices within the well, and a P-diffused area in order to limit leakage at the isolation edge is implemented in partly-depleted silicon-on-insulator (PD-SOI) technology. This radiation hardening technique can minimize the layout area by more than 60%, and allows flexible placement of the body contact. Radiation hardened transistors and 256 Kb flash memory chips are designed and fabricated in a 0.6 μm PD-SOI process. Experiments show that no obvious increase in leakage current is observed for single transistors under 1 Mrad(Si) radiation, and that the 256 Kb memory chip still functions well after a TID of 100 krad(Si), with only 50% increase of the active power consumption in read mode. (semiconductor devices)

  14. Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct Ionization

    International Nuclear Information System (INIS)

    Raine, M.; Gaillardin, M.; Sauvestre, J.E.; Flament, O.; Bournel, A.; Aubry-Fortuna, V.

    2010-01-01

    The response of SOI transistors under heavy ion irradiation is analyzed using Geant4 and Synopsys Sentaurus device simulations. The ion mass and energy have a significant impact on the radial ionization profile of the ion deposited charge. For example, for an identical LET, the higher the ion energy per nucleon, the wider the radial ionization track. For a 70-nm SOI technology, the track radius of high energy ions (≥ 10 MeV/a) is larger than the transistor sensitive volume; part of the ion charge recombines in the highly doped source or drain regions and does not participate to the transistor electric response. At lower energy (≤ 10 MeV/a), as often used for ground testing, the track radius is smaller than the transistor sensitive volume, and the entire charge is used for the transistor response. The collected charge is then higher, corresponding to a worst-case response of the transistor. Implications for the hardness assurance of highly-scaled generations are discussed. (authors)

  15. arXiv Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

    CERN Document Server

    INSPIRE-00541780; Cindro, V.; Gorišek, A.; Hemperek, T.; Kishishita, T.; Kramberger, G.; Krüger, H.; Mandić, I.; Mikuž, M.; Wermes, N.; Zavrtanik, M.

    2017-10-25

    Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1x10e16 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5x10e14 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The r...

  16. Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation

    International Nuclear Information System (INIS)

    Dong Yemin; Chen Meng; Chen Jing; Wang Xiang; Wang Xi

    2004-01-01

    Hybrid substrates comprising both silicon-on-insulator (SOI) and bulk Si regions have been fabricated using the technique of patterned separation by implantation of oxygen (SIMOX) with high-dose (1.5 x 10 18 cm -2 ) and low-dose ((1.5-3.5) x 10 17 cm -2 ) oxygen ions, respectively. Cross-sectional transmission electron microscopy (XTEM) was employed to examine the microstructures of the resulting materials. Experimental results indicate that the SOI/Si hybrid substrate fabricated using high-dose SIMOX is of inferior quality with very large surface height step and heavily damaged transitions between the SOI and bulk regions. However, the quality of the SOI/Si hybrid substrate is enhanced dramatically by reducing the implant dose. The defect density in transitions is reduced considerably. Moreover, the expected surface height difference does not exist and the surface is exceptionally flat. The possible mechanisms responsible for the improvements in quality are discussed

  17. Simple indicator to identify the environmental soundness of growth of consumption and technology: "eco-velocity of consumption".

    Science.gov (United States)

    Nansai, Keisuke; Kagawa, Shigemi; Suh, Sangwon; Inaba, Rokuta; Moriguchi, Yuichi

    2007-02-15

    Today's material welfare has been achieved at the expense of consumption of finite resources and generation of environmental burdens. Over the past few decades the volume of global consumption has grown dramatically, while at the same time technological advances have enabled products with greater efficiencies. These two directions of change, consumption growth and technological advance, are the foci of the present paper. Using quantitative measures for these two factors, we define a new indicator, "eco-velocity of consumption", analogous to velocity in physics. The indicator not only identifies the environmental soundness of consumption growth and technological advance but also indicates whether and to what extent our society is shifting toward sustainable consumption. This study demonstrates the practicability of the indicator through a case study in which we calculate the eco-velocities of Japanese household consumption in 2 years: 1995 and 2000. The rate of technological advance during the periods concerned is quantified in terms of the embodied carbon dioxide emission per yen of product. The results show that the current growth rate of Japanese household consumption is greater than the rate of technological advance to mitigate carbon dioxide emissions. The eco-velocities at the level of individual commodity groups are also examined, and the sources of changes in eco-velocity for each commodity are identified using structural decomposition analysis.

  18. Fully etched apodized grating coupler on the SOI platform with −058 dB coupling efficiency

    DEFF Research Database (Denmark)

    Ding, Yunhong; Peucheret, Christophe; Ou, Haiyan

    2014-01-01

    We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon- on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity andcoupling angle dependence are experimentally investiga......We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon- on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity andcoupling angle dependence are experimentally...

  19. Output-Conductance Transition-Free Method for Improving Radio-Frequency Linearity of SOI MOSFET Circuits

    Directory of Open Access Journals (Sweden)

    A. Daghighi

    2013-09-01

    Full Text Available In this article, a novel concept is introduced to improve the radio frequency (RF linearity of partially-depleted (PD silicon-on-insulator (SOI MOSFET circuits. The transition due to the non-zero body resistance (RBody in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free circuit is shown. 3-D Simulations of various body-contacted devices are carried out to extract the transition-free body resistances. To identify the output conductance transition-free concept and its application to RF circuits, a 2.4 GHz low noise amplifier (LNA is analyzed. Mixed mode device-circuit analysis is carried out to simultaneously solve device transport equations and circuit spice models. FFT calculations are performed on the output signal to compute harmonic distortion figures. Comparing the conventional body-contacted and transition-free SOI LNAs, third harmonic distortion (HD3 and total harmonic distortion (THD are improved by 16% and 24%, respectively. Two-tone test is used to analyze third order intermodulation distortions. OIP3 is improved in transition-free SOI LNA by 17% comparing with the conventional body-contacted SOI LNA. These results show the possibility of application of transition-free design concept to improve linearity of RF SOI MOSFET circuits.

  20. Rapid, simple and direct detection of Meloidogyne hapla from infected root galls using loop-mediated isothermal amplification combined with FTA technology.

    Science.gov (United States)

    Peng, Huan; Long, Haibo; Huang, Wenkun; Liu, Jing; Cui, Jiangkuan; Kong, Lingan; Hu, Xianqi; Gu, Jianfeng; Peng, Deliang

    2017-04-03

    The northern root-knot nematode (Meloidogyne hapla) is a damaging nematode that has caused serious economic losses worldwide. In the present study, a sensitive, simple and rapid method was developed for detection of M. hapla in infested plant roots by combining a Flinders Technology Associates (FTA) card with loop-mediated isothermal amplification (LAMP). The specific primers of LAMP were designed based on the distinction of internal transcribed spacer (ITS) sequences between M. hapla and other Meloidogyne spp. The LAMP assay can detect nematode genomic DNA at concentrations low to 1/200 000, which is 100 times more sensitive than conventional PCR. The LAMP was able to highly specifically distinguish M. hapla from other closely related nematode species. Furthermore, the advantages of the FTA-LAMP assay to detect M. hapla were demonstrated by assaying infected root galls that were artificially inoculated. In addition, M. hapla was successfully detected from six of forty-two field samples using FTA-LAMP technology. This study was the first to provide a simple diagnostic assay for M. hapla using the LAMP assay combined with FTA technology. In conclusion, the new FTA-LAMP assay has the potential for diagnosing infestation in the field and managing the pathogen M. hapla.

  1. Total dose radiation effects of pressure sensors fabricated on uni-bond-SOI materials

    International Nuclear Information System (INIS)

    Zhu Shiyang; Huang Yiping; Wang Jin; Li Anzhen; Shen Shaoqun; Bao Minhang

    2001-01-01

    Piezoresistive pressure sensors with a twin-island structure were successfully fabricated using high quality Uni-bond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO 2 , the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60 Co γ-rays up to 2.3 x 10 4 Gy(H 2 O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition

  2. Superconducting nanowire single-photon detectors (SNSPDs) on SOI for near-infrared range

    Energy Technology Data Exchange (ETDEWEB)

    Trojan, Philipp; Il' in, Konstantin; Henrich, Dagmar; Hofherr, Matthias; Doerner, Steffen; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie (KIT) (Germany); Semenov, Alexey [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Huebers, Heinz-Wilhelm [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin (Germany)

    2013-07-01

    Superconducting nanowire single-photon detectors are promising devices for photon detectors with high count rates, low dark count rates and low dead times. At wavelengths beyond the visible range, the detection efficiency of today's SNSPDs drops significantly. Moreover, the low absorption in ultra-thin detector films is a limiting factor over the entire spectral range. Solving this problem requires approaches for an enhancement of the absorption range in feeding the light to the detector element. A possibility to obtain a better absorption is the use of multilayer substrate materials for photonic waveguide structures. We present results on development of superconducting nanowire single-photon detectors made from niobium nitride on silicon-on-insulator (SOI) multilayer substrates. Optical and superconducting properties of SNSPDs on SOI will be discussed and compared with the characteristics of detectors on common substrates.

  3. Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins

    KAUST Repository

    Diab, Amer El Hajj

    2014-12-01

    We report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field-effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k/metal gate-stacks. For the first time, we characterize them from room to high temperature (150 °C) to show the impact of temperature variation on drain current, gate leakage current, and transconductance. Variation of extracted parameters, such as low-field mobility, subthreshold swing, threshold voltage, and ON-OFF current characteristics, is reported too. Direct comparison is made to a rigid version of the SOI FinFETs. The mobility degradation with temperature is mainly caused by phonon scattering mechanism. The overall excellent devices performance at high temperature after release is outlined proving the suitability of truly high-performance flexible inorganic electronics with such advanced architecture.

  4. New insights into fully-depleted SOI transistor response during total-dose irradiation

    International Nuclear Information System (INIS)

    Schwank, J.R.; Shaneyfelt, M.R.; Dodd, P.E.; Burns, J.A.; Keast, C.L.; Wyatt, P.W.

    1999-01-01

    In this paper, we present irradiation results on 2-fully depleted processes (HYSOI6, RKSOI) that show SOI (silicon on insulator) device response can be more complicated than originally suggested by others. The major difference between the 2 process versions is that the RKSOI process incorporates special techniques to minimize pre-irradiation parasitic leakage current from trench sidewalls. Transistors were irradiated at room temperature using 10 keV X-ray source. Worst-case bias configuration for total-dose testing fully-depleted SOI transistors was found to be process dependent. It appears that the worst-case bias for HYPOI6 process is the bias that causes the largest increase in sidewall leakage. The RKSOI process shows a different response during irradiation, the transition response appears to be dominated by charge trapping in the buried oxide. These results have implications for hardness assurance testing. (A.C.)

  5. Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX

    Science.gov (United States)

    Li, Ying; Niu, Guofu; Cressler, J. D.; Patel, J.; Marshall, C. J.; Marshall, P. W.; Kim, H. S.; Reed, R. A.; Palmer, M. J.

    2001-12-01

    We investigate the proton tolerance of fully depleted silicon-on-insulator (SOI) MOSFETs with H-gate and regular-gate structural configurations. For the front-gate characteristics, the H-gate does not show the edge leakage observed in the regular-gate transistor. An anomalous kink in the back-gate linear I/sub D/-V/sub GS/ characteristics of the fully depleted SOI nFETs has been observed at high radiation doses. This kink is attributed to charged traps generated in the bandgap at the buried oxide/silicon film interface during irradiation. Extensive two-dimensional simulations with MEDICI were used to understand the physical origin of this kink. We also report unusual self-annealing effects in the devices when they are cooled to liquid nitrogen temperature.

  6. Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

    International Nuclear Information System (INIS)

    Barchuk, I.P.; Kilchitskaya, V.I.; Lysenko, V.S.

    1997-01-01

    In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMR-technique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique

  7. Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process

    Directory of Open Access Journals (Sweden)

    Avi Karsenty

    2015-01-01

    Full Text Available Nanoscale Gate-Recessed Channel (GRC Fully Depleted- (FD- SOI MOSFET device with a silicon channel thickness (tSi as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K for I-V characterizations. In spite of its FD-SOI nanoscale thickness and long channel feature, the device has surprisingly exhibited a Drain-Induced Barrier Lowering (DIBL effect at RT. However, this effect was suppressed at 77 K. If the apparition of such anomalous effect can be explained by a parasitic short channel transistor located at the edges of the channel, its suppression is explained by the decrease of the potential barrier between the drain and the channel when lowering the temperature.

  8. 300 nm bandwidth adiabatic SOI polarization splitter-rotators exploiting continuous symmetry breaking.

    Science.gov (United States)

    Socci, Luciano; Sorianello, Vito; Romagnoli, Marco

    2015-07-27

    Adiabatic polarization splitter-rotators are investigated exploiting continuous symmetry breaking thereby achieving significant device size and losses reduction in a single mask fabrication process for both SOI channel and ridge waveguides. A crosstalk lower than -25 dB is expected over 300nm bandwidth, making the device suitable for full grid CWDM and diplexer/triplexer FTTH applications at 1310, 1490 and 1550nm.

  9. Formation of SIMOX–SOI structure by high-temperature oxygen implantation

    International Nuclear Information System (INIS)

    Hoshino, Yasushi; Kamikawa, Tomohiro; Nakata, Jyoji

    2015-01-01

    We have performed oxygen ion implantation in silicon at very high substrate-temperatures (⩽1000 °C) for the purpose of forming silicon-on-insulator (SOI) structure. We have expected that the high-temperature implantation can effectively avoids ion-beam-induced damages in the SOI layer and simultaneously stabilizes the buried oxide (BOX) and SOI-Si layer. Such a high-temperature implantation makes it possible to reduce the post-implantation annealing temperature. In the present study, oxygen ions with 180 keV are incident on Si(0 0 1) substrates at various temperatures from room temperature (RT) up to 1000 °C. The ion-fluencies are in order of 10"1"7–10"1"8 ions/cm"2. Samples have been analyzed by atomic force microscope, Rutherford backscattering, and micro-Raman spectroscopy. It is found in the AFM analysis that the surface roughness of the samples implanted at 500 °C or below are significantly small with mean roughness of less than 1 nm, and gradually increased for the 800 °C-implanted sample. On the other hand, a lot of dents are observed for the 1000 °C-implanted sample. RBS analysis has revealed that stoichiometric SOI-Si and BOX-SiO_2 layers are formed by oxygen implantation at the substrate temperatures of RT, 500, and 800 °C. However, SiO_2-BOX layer has been desorbed during the implantation. Raman spectra shows that the ion-beam-induced damages are fairly suppressed by such a high-temperatures implantation.

  10. Simple machines

    CERN Document Server

    Graybill, George

    2007-01-01

    Just how simple are simple machines? With our ready-to-use resource, they are simple to teach and easy to learn! Chocked full of information and activities, we begin with a look at force, motion and work, and examples of simple machines in daily life are given. With this background, we move on to different kinds of simple machines including: Levers, Inclined Planes, Wedges, Screws, Pulleys, and Wheels and Axles. An exploration of some compound machines follows, such as the can opener. Our resource is a real time-saver as all the reading passages, student activities are provided. Presented in s

  11. Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

    2005-01-01

    Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

  12. Analyses of the radiation-caused characteristics change in SOI MOSFETs using field shield isolation

    International Nuclear Information System (INIS)

    Hirano, Yuuichi; Maeda, Shigeru; Fernandez, Warren; Iwamatsu, Toshiaki; Yamaguchi, Yasuo; Maegawa, Shigeto; Nishimura, Tadashi

    1999-01-01

    Reliability against radiation ia an important issue in silicon on insulator metal oxide semiconductor field effect transistors (SOI MOSFETs) used in satellites and nuclear power plants and so forth which are severely exposed to radiation. Radiation-caused characteristic change related to the isolation-edge in an irradiated environment was analyzed on SOI MOSFETs. Moreover short channel effects for an irradiated environment were investigated by simulations. It was revealed that the leakage current which was observed in local oxidation of silicon (LOCOS) isolated SOI MOSFETs was successfully suppressed by using field shield isolation. Simulated potential indicated that the potential rise at the LOCOS edge can not be seen in the case of field shield isolation edge which does not have physical isolation. Also it was found that the threshold voltage shift caused by radiation in short channel regime is severer than that in long regime channel. In transistors with a channel length of 0.18μm, a potential rise of the body region by radiation-induced trapped holes can be seen in comparison with that of 1.0μm. As a result, we must consider these effects for designing deep submicron devices used in an irradiated environment. (author)

  13. Density dependence of electron mobility in the accumulation mode for fully depleted SOI films

    Energy Technology Data Exchange (ETDEWEB)

    Naumova, O. V., E-mail: naumova@isp.nsc.ru; Zaitseva, E. G.; Fomin, B. I.; Ilnitsky, M. A.; Popov, V. P. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2015-10-15

    The electron mobility µ{sub eff} in the accumulation mode is investigated for undepleted and fully depleted double-gate n{sup +}–n–n{sup +} silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFET). To determine the range of possible values of the mobility and the dominant scattering mechanisms in thin-film structures, it is proposed that the field dependence of the mobility µ{sub eff} be replaced with the dependence on the density N{sub e} of induced charge carriers. It is shown that the dependences µ{sub eff}(N{sub e}) can be approximated by the power functions µ{sub eff}(N{sub e}) ∝ N{sub e}{sup -n}, where the exponent n is determined by the chargecarrier scattering mechanism as in the mobility field dependence. The values of the exponent n in the dependences µ{sub eff}(N{sub e}) are determined when the SOI-film mode near one of its surfaces varies from inversion to accumulation. The obtained results are explained from the viewpoint of the electron-density redistribution over the SOI-film thickness and changes in the scattering mechanisms.

  14. Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

    International Nuclear Information System (INIS)

    Lei Tianfei; Luo Xiaorong; Ge Rui; Chen Xi; Wang Yuangang; Yao Guoliang; Jiang Yongheng; Zhang Bo; Li Zhaoji

    2011-01-01

    An ultra-low specific on-resistance (R on,sp ) silicon-on-insulator (SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed. The MOSFET features double gates and an oxide trench: the oxide trench is in the drift region, one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide. Firstly, the double gates reduce R on,sp by forming dual conduction channels. Secondly, the oxide trench not only folds the drift region, but also modulates the electric field, thereby reducing device pitch and increasing the breakdown voltage (BV). ABV of 93 V and a R on,sp of 51.8 mΩ·mm 2 is obtained for a DG trench MOSFET with a 3 μm half-cell pitch. Compared with a single-gate SOI MOSFET (SG MOSFET) and a single-gate SOI MOSFET with an oxide trench (SG trench MOSFET), the R on,sp of the DG trench MOSFET decreases by 63.3% and 33.8% at the same BV, respectively. (semiconductor devices)

  15. A Temperature Sensor using a Silicon-on-Insulator (SOI) Timer for Very Wide Temperature Measurement

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad; Elbuluk, Malik; Culley, Dennis E.

    2008-01-01

    A temperature sensor based on a commercial-off-the-shelf (COTS) Silicon-on-Insulator (SOI) Timer was designed for extreme temperature applications. The sensor can operate under a wide temperature range from hot jet engine compartments to cryogenic space exploration missions. For example, in Jet Engine Distributed Control Architecture, the sensor must be able to operate at temperatures exceeding 150 C. For space missions, extremely low cryogenic temperatures need to be measured. The output of the sensor, which consisted of a stream of digitized pulses whose period was proportional to the sensed temperature, can be interfaced with a controller or a computer. The data acquisition system would then give a direct readout of the temperature through the use of a look-up table, a built-in algorithm, or a mathematical model. Because of the wide range of temperature measurement and because the sensor is made of carefully selected COTS parts, this work is directly applicable to the NASA Fundamental Aeronautics/Subsonic Fixed Wing Program--Jet Engine Distributed Engine Control Task and to the NASA Electronic Parts and Packaging (NEPP) Program. In the past, a temperature sensor was designed and built using an SOI operational amplifier, and a report was issued. This work used an SOI 555 timer as its core and is completely new work.

  16. A low on-resistance SOI LDMOS using a trench gate and a recessed drain

    International Nuclear Information System (INIS)

    Ge Rui; Luo Xiaorong; Jiang Yongheng; Zhou Kun; Wang Pei; Wang Qi; Wang Yuangang; Zhang Bo; Li Zhaoji

    2012-01-01

    An integrable silicon-on-insulator (SOI) power lateral MOSFET with a trench gate and a recessed drain (TGRD MOSFET) is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide (BOX) and the recessed drain reduce the specific on-resistance (R on,sp ) by widening the vertical conduction area and shortening the extra current path. The trench gate is extended as a field plate improves the electric field distribution. Breakdown voltage (BV) of 97 V and R on,sp of 0.985 mΩ·cm 2 (V GS = 5 V) are obtained for a TGRD MOSFET with 6.5 μm half-cell pitch. Compared with the trench gate SOI MOSFET (TG MOSFET) and the conventional MOSFET, R on,sp of the TGRD MOSFET decreases by 46% and 83% at the same BV, respectively. Compared with the SOI MOSFET with a trench gate and a trench drain (TGTD MOSFET), BV of the TGRD MOSFET increases by 37% at the same R on,sp . (semiconductor devices)

  17. Electron mobility in the inversion layers of fully depleted SOI films

    Energy Technology Data Exchange (ETDEWEB)

    Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru; Naumova, O. V.; Fomin, B. I. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2017-04-15

    The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.

  18. Simple and Rapid In Vivo Generation of Chromosomal Rearrangements using CRISPR/Cas9 Technology

    Directory of Open Access Journals (Sweden)

    Rafael B. Blasco

    2014-11-01

    Full Text Available Generation of genetically engineered mouse models (GEMMs for chromosomal translocations in the endogenous loci by a knockin strategy is lengthy and costly. The CRISPR/Cas9 system provides an innovative and flexible approach for genome engineering of genomic loci in vitro and in vivo. Here, we report the use of the CRISPR/Cas9 system for engineering a specific chromosomal translocation in adult mice in vivo. We designed CRISPR/Cas9 lentiviral vectors to induce cleavage of the murine endogenous Eml4 and Alk loci in order to generate the Eml4-Alk gene rearrangement recurrently found in non-small-cell lung cancers (NSCLCs. Intratracheal or intrapulmonary inoculation of lentiviruses induced Eml4-Alk gene rearrangement in lung cells in vivo. Genomic and mRNA sequencing confirmed the genome editing and the production of the Eml4-Alk fusion transcript. All mice developed Eml4-Alk-rearranged lung tumors 2 months after the inoculation, demonstrating that the CRISPR/Cas9 system is a feasible and simple method for the generation of chromosomal rearrangements in vivo.

  19. A novel δ-doped partially insulated dopant-segregated Schottky barrier SOI MOSFET for analog/RF applications

    International Nuclear Information System (INIS)

    Patil, Ganesh C; Qureshi, S

    2011-01-01

    In this paper, a comparative analysis of single-gate dopant-segregated Schottky barrier (DSSB) SOI MOSFET and raised source/drain ultrathin-body SOI MOSFET (RSD UTB) has been carried out to explore the thermal efficiency, scalability and analog/RF performance of these devices. A novel p-type δ-doped partially insulated DSSB SOI MOSFET (DSSB Pi-OX-δ) has been proposed to reduce the self-heating effect and to improve the high-frequency performance of DSSB SOI MOSFET over RSD UTB. The improved analog/RF figures of merit such as transconductance, transconductance generation factor, unity-gain frequency, maximum oscillation frequency, short-circuit current gain and unilateral power gain in DSSB Pi-OX-δ MOSFET show the suitability of this device for analog/RF applications. The reduced drain-induced barrier lowering, subthreshold swing and parasitic capacitances also make this device highly scalable. By using mixed-mode simulation capability of MEDICI simulator a cascode amplifier has been implemented using all the structures (RSD UTB, DSSB SOI and DSSB Pi-OX-δ MOSFETs). The results of this implementation show that the gain-bandwidth product in the case of DSSB Pi-OX-δ MOSFET has improved by 50% as compared to RSD UTB and by 20% as compared to DSSB SOI MOSFET. The detailed fabrication flow of DSSB Pi-OX-δ MOSFET has been proposed which shows that with the bare minimum of steps the performance of DSSB SOI MOSFET can be improved significantly in comparison to RSD UTB

  20. Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6 - 1 V)

    International Nuclear Information System (INIS)

    Ferlet-Cavrois, V.; Musseau, O.; Leray, J.L.; Faynot, O.; Raynaud, C.; Pelloie, J.L.

    1999-01-01

    In this paper, we presented two DTMOS architectures processed with a partially depleted SOI technology. The first architecture, DTMOS without limiting transistor, is dedicated to ultra-low voltage applications, at 0.6 V. For 1V applications, the second architecture, DTMOS with limiting transistor, needs an additional transistor to limit the body-source diode current. The total dose irradiation of both DTMOS architectures induces no change of the drain current, but an increase of the body-source diode current. Total dose induced trapped charge in the buried oxide increases the body potential of the DTMOS transistor. It induces an increase of the current flow at the back interface of the silicon film. Irradiation of complex circuits using DTMOS transistors would lead to a degradation of the stand-by consumption. (authors)

  1. A new memory effect (MSD) in fully depleted SOI MOSFETs

    Science.gov (United States)

    Bawedin, M.; Cristoloveanu, S.; Yun, J. G.; Flandre, D.

    2005-09-01

    We demonstrate that the transconductance and drain current of fully depleted MOSFETs can display an interesting time-dependent hysteresis. This new memory effect, called meta-stable dip (MSD), is mainly due to the long carrier generation lifetime in the silicon film. Our parametric analysis shows that the memory window can be adjusted in view of practical applications. Various measurement conditions and devices with different doping, front oxide and silicon film thicknesses are systematically explored. The MSD effect can be generalized to several fully depleted CMOS technologies. The MSD mechanism is discussed and validated by two-dimensional simulations results.

  2. Simulation Opportunity Index, A Simple and Effective Method to Boost the Hydrocarbon Recovery

    KAUST Repository

    Saputra, Wardana

    2016-01-01

    This paper describes how the SOI software helps as a simple, fast, and accurate way to obtain the higher hydrocarbon production than that of trial-error method and previous studies in two different fields located in offshore Indonesia. On one hand, the proposed method could save money by minimizing the required number of wells. On the other hand, it could maximize profit by maximizing recovery.

  3. Simple prostatectomy

    Science.gov (United States)

    ... Han M, Partin AW. Simple prostatectomy: open and robot-assisted laparoscopic approaches. In: Wein AJ, Kavoussi LR, ... M. is also a founding member of Hi-Ethics and subscribes to the principles of the Health ...

  4. Analysis of photonic spot profile converter and bridge structure on SOI platform for horizontal and vertical integration

    Science.gov (United States)

    Majumder, Saikat; Jha, Amit Kr.; Biswas, Aishik; Banerjee, Debasmita; Ganguly, Dipankar; Chakraborty, Rajib

    2017-08-01

    Horizontal spot size converter required for horizontal light coupling and vertical bridge structure required for vertical integration are designed on high index contrast SOI platform in order to form more compact integrated photonic circuits. Both the structures are based on the concept of multimode interference. The spot size converter can be realized by successive integration of multimode interference structures with reducing dimension on horizontal plane, whereas the optical bridge structure consists of a number of vertical multimode interference structure connected by single mode sections. The spot size converter can be modified to a spot profile converter when the final single mode waveguide is replaced by a slot waveguide. Analysis have shown that by using three multimode sections in a spot size converter, an Gaussian input having spot diameter of 2.51 μm can be converted to a spot diameter of 0.25 μm. If the output single mode section is replaced by a slot waveguide, this input profile can be converted to a flat top profile of width 50 nm. Similarly, vertical displacement of 8μm is possible by using a combination of two multimode sections and three single mode sections in the vertical bridge structure. The analyses of these two structures are carried out for both TE and TM modes at 1550 nm wavelength using the semi analytical matrix method which is simple and fast in computation time and memory. This work shows that the matrix method is equally applicable for analysis of horizontally as well as vertically integrated photonic circuit.

  5. Simple unification

    International Nuclear Information System (INIS)

    Ponce, W.A.; Zepeda, A.

    1987-08-01

    We present the results obtained from our systematic search of a simple Lie group that unifies weak and electromagnetic interactions in a single truly unified theory. We work with fractionally charged quarks, and allow for particles and antiparticles to belong to the same irreducible representation. We found that models based on SU(6), SU(7), SU(8) and SU(10) are viable candidates for simple unification. (author). 23 refs

  6. Electrical characteristics of SiGe-base bipolar transistors on thin-film SOI substrates

    International Nuclear Information System (INIS)

    Liao, Shu-Hui; Chang, Shu-Tong

    2010-01-01

    This paper, based on two-dimensional simulations, provides a comprehensive analysis of the electrical characteristics of the Silicon germanium (SiGe)-base bipolar transistors on thin-film siliconon-insulator (SOI) substrates. The impact of the buried oxide thickness (T OX ), the emitter width (W E ), and the lateral distance between the edge of the intrinsic base and the reach-through region (L col ) on both the AC and DC device characteristics was analyzed in detail. Regarding the DC characteristics, the simulation results suggest that a thicker T OX gives a larger base-collector breakdown voltage (BV CEO ), whereas reducing the T OX leads to an enhanced maximum electric field at the B-C junction. As for the AC characteristics, cut-off frequency (f T ) increases slightly with increasing buried oxide thickness and finally saturates to a constant value when the buried oxide thickness is about 0.15 μm. The collector-substrate capacitance (C CS ) decreases with increasing buried oxide thickness while the maximum oscillation frequency (f max ) increases with increasing buried oxide thickness. Furthermore, the impact of self-heating effects in the device was analyzed in various areas. The thermal resistance as a function of the buried oxide thickness indicates that the thermal resistance of the SiGe-base bipolar transistor on a SOI substrate is slightly higher than that of a bulk SiGe-base bipolar transistor. The thermal resistance is reduced by ∼37.89% when the emitter width is increased by a factor of 5 for a fixed buried oxide thickness of 0.1 μm. All the results can be used to design and optimize SiGe-base bipolar transistors on SOI substrates with minimum thermal resistance to enhance device performance.

  7. Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

    Science.gov (United States)

    Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

    2015-02-01

    We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

  8. A quantitative discussion on the assessment of power supply technologies: DEA (data envelopment analysis) and SAW (simple additive weighting) as complementary methods for the “Grammar”

    International Nuclear Information System (INIS)

    Shakouri, Hamed G.; Nabaee, Mahdis; Aliakbarisani, Sajad

    2014-01-01

    The growing concern about the negative effects of fossil fuels on the environment, and the limited resources of them have forced more intensive use of other energy sources. In absence of sufficient economically feasible renewable energies, nuclear power may play essential role in this field. Recently, the advantages and disadvantages of nuclear power and fossil fuels regarding their efficiencies have been attracted researchers' interest. This paper discusses on the findings from “A Grammar for assessing the performance of power supply systems: comparing nuclear energy to fossil energy” (Diaz-Maurin F, Giampietro M. 2013). Although the “Grammar” is a very valuable approach, it can be accomplished by using helpful quantitative methods. In this discussion, we apply quantitative decision-making approaches to compare the same fossil fuel (coal) power plants with nuclear power plants. Economic variables are also taken into consideration. The DEA (data envelopment analysis) and SAW (simple additive weighting) are the methods applied. Results confirm the results of the reference paper in most cases and show that the fossil fuel power plants with CCS (carbon capture and storage) are slightly more efficient than nuclear power plants. However, selection of input and output variables is disputable. Assuming job creation as a desired output can change the ranking results. - Highlights: • A numeric decision making approach is proposed to facilitate assessment of technologies introduced as a “Grammar”. • Two different methods are chosen (SAW and DEA) since the results obtained for ranking may differ with different methods. • We propose to use the original fractional objective function of DEA with equal weightings applied for the attributes. • Proper combinations of both input and output attributes including economic variables are discussed. • The attributes for assessment of the technologies differ from different viewpoints. Labor force and costs are simple

  9. A New Nonlinear Model of Body Resistance in Nanometer PD SOI MOSFETs

    Directory of Open Access Journals (Sweden)

    Arash Daghighi

    2011-01-01

    Full Text Available In this paper, a nonlinear model for the body resistance of a 45nm PD SOI MOSFET is developed. This model verified on the base of the small signal three-dimensional simulation results. In this paper by using the three-dimensional simulation of ISE-TCAD software, the indicating factors of body resistance in nanometer transistors and then are shown, using the surface potential model. A mathematical relation to calculat the body resistance incorporating device width and body potential was derived. Excellent agreement was obtained by comparing the model outputs and three-dimensional simulation results.

  10. A three-dimensional breakdown model of SOI lateral power transistors with a circular layout

    International Nuclear Information System (INIS)

    Guo Yufeng; Wang Zhigong; Sheu Gene

    2009-01-01

    This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted drift regions. The breakdown voltages for N + N and P + N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications. (semiconductor devices)

  11. Mapping the broadband polarization properties of linear 2D SOI photonic crystal waveguides

    DEFF Research Database (Denmark)

    Canning, John; Skivesen, Nina; Kristensen, Martin

    2007-01-01

    Both quasi-TE and TM polarisation spectra for a silicon- on-insulator (SOI) waveguide are recorded over (1100-1700) nm using a broadband supercontinuum source. By studying both the input and output polarisation eigenstates we observe narrowband resonant cross coupling near the lowest quasi-TE mode...... cut-off. We also observe relatively broadband mixing between the two eigenstates to generate a complete photonic bandgap. By careful analysis of the output polarisation state we report on an inherent non-reciprocity between quasi TE and TM fundamental mode cross coupling. The nature of polarisation...

  12. Intrinsic Nonlinearities and Layout Impacts of 100 V Integrated Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    Parasitic capacitances of power semiconductors are a part of the key design parameters of state-of-the-art very high frequency (VHF) power supplies. In this poster, four 100 V integrated power MOSFETs with different layout structures are designed, implemented, and analyzed in a 0.18 ȝm partial...... Silicon-on-Insulator (SOI) process with a die area 2.31 mm2.  A small-signal model of power MOSFETs is proposed to systematically analyze the nonlinear parasitic capacitances in different transistor states: off-state, sub-threshold region, and on-state in the linear region. 3D plots are used to summarize...

  13. Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs

    Science.gov (United States)

    Hubert, A.; Bawedin, M.; Cristoloveanu, S.; Ernst, T.

    2009-12-01

    The difficult scaling of bulk Dynamic Random Access Memories (DRAMs) has led to various concepts of capacitor-less single-transistor (1T) architectures based on SOI transistor floating-body effects. Amongst them, the Meta-Stable Dip RAM (MSDRAM), which is a double-gate Fully Depleted SOI transistor, exhibits attractive performances. The Meta-Stable Dip effect results from the reduced junction leakage current and the long carrier generation lifetime in thin silicon film transistors. In this study, various devices with different gate lengths, widths and silicon film thicknesses have been systematically explored, revealing the impact of transistor dimensions on the MSD effect. These experimental results are discussed and validated by two-dimensional numerical simulations. It is found that MSD is maintained for small dimensions even in standard SOI MOSFETs, although specific optimizations are expected to enhance MSDRAM performances.

  14. A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate

    International Nuclear Information System (INIS)

    Wang Zhongjian; Cheng Xinhong; Xia Chao; Xu Dawei; Cao Duo; Song Zhaorui; Yu Yuehui; Shen Dashen

    2012-01-01

    A 680 V LDMOS on a thin SOI with an improved field oxide (FOX) and dual field plate was studied experimentally. The FOX structure was formed by an 'oxidation-etch-oxidation' process, which took much less time to form, and had a low protrusion profile. A polysilicon field plate extended to the FOX and a long metal field plate was used to improve the specific on-resistance. An optimized drift region implant for linear-gradient doping was adopted to achieve a uniform lateral electric field. Using a SimBond SOI wafer with a 1.5 μm top silicon and a 3 μm buried oxide layer, CMOS compatible SOI LDMOS processes are designed and implemented successfully. The off-state breakdown voltage reached 680 V, and the specific on-resistance was 8.2 Ω·mm 2 . (semiconductor devices)

  15. Novel technique of source and drain engineering for dual-material double-gate (DMDG) SOI MOSFETS

    Science.gov (United States)

    Yadav, Himanshu; Malviya, Abhishek Kumar; Chauhan, R. K.

    2018-04-01

    The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened ION current with higher ION to IOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

  16. The use of assistive technology in the everyday lives of young people living with dementia and their caregivers. Can a simple remote control make a difference?

    Science.gov (United States)

    Jentoft, Rita; Holthe, Torhild; Arntzen, Cathrine

    2014-12-01

    This study was a part of a larger study exploring the impact of assistive technology on the lives of young people living with dementia (YPD). This paper focuses on one of the most useful devices, the simple remote control (SRC). The objective was to explore the reason why the SRC is significant and beneficial in the everyday lives of YPD and their caregivers. This qualitative longitudinal study had a participatory design. Eight participants received an SRC. The range for using it was 0-15 months. In-depth interviews and observations were conducted at baseline and repeated every third month up to 18 months. A situated learning approach was used in the analysis to provide a deeper understanding of the significance and use of SRC. Young people having dementia spend a substantial amount of time alone. Watching television was reported to be important, but handling remote controls was challenging and created a variety of problems. YPD learned to use SRC, which made important differences in the everyday lives of all family members. Comprehensive support from caregivers and professionals was important for YPD in the learning process. The SRC was deemed a success because it solved challenges regarding the use of television in everyday lives of families. The design was recognizable and user-friendly, thus allowing YPD to learn its operation. Access to professional support and advice regarding assistive technology is vital for establishing a system for follow-up and continued collaboration to make future adaptations and adjustments.

  17. Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

    Science.gov (United States)

    Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

    2013-12-13

    This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

  18. Photonic bandpass filter characteristics of multimode SOI waveguides integrated with submicron gratings.

    Science.gov (United States)

    Sah, Parimal; Das, Bijoy Krishna

    2018-03-20

    It has been shown that a fundamental mode adiabatically launched into a multimode SOI waveguide with submicron grating offers well-defined flat-top bandpass filter characteristics in transmission. The transmitted spectral bandwidth is controlled by adjusting both waveguide and grating design parameters. The bandwidth is further narrowed down by cascading two gratings with detuned parameters. A semi-analytical model is used to analyze the filter characteristics (1500  nm≤λ≤1650  nm) of the device operating in transverse-electric polarization. The proposed devices were fabricated with an optimized set of design parameters in a SOI substrate with a device layer thickness of 250 nm. The pass bandwidth of waveguide devices integrated with single-stage gratings are measured to be ∼24  nm, whereas the device with two cascaded gratings with slightly detuned periods (ΔΛ=2  nm) exhibits a pass bandwidth down to ∼10  nm.

  19. Characterization of ultrathin SOI film and application to short channel MOSFETs.

    Science.gov (United States)

    Tang, Xiaohui; Reckinger, Nicolas; Larrieu, Guilhem; Dubois, Emmanuel; Flandre, Denis; Raskin, Jean-Pierre; Nysten, Bernard; Jonas, Alain M; Bayot, Vincent

    2008-04-23

    In this study, a very dilute solution (NH(4)OH:H(2)O(2):H(2)O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s(-1) based on the self-limited etching speed of the solution. The thickness uniformity of the thin film, evaluated by spectroscopic ellipsometry and by high-resolution x-ray reflectivity, remains constant through the thinning process. Moreover, the film roughness, analyzed by atomic force microscopy, slightly improves during the thinning process. The residual stress in the thin film is much smaller than that obtained by sacrificial oxidation. Mobility, measured by means of a bridge-type Hall bar on 15 nm film, is not significantly reduced compared to the value of bulk silicon. Finally, the thinned SOI wafers were used to fabricate Schottky-barrier metal-oxide-semiconductor field-effect transistors with a gate length down to 30 nm, featuring state-of-the-art current drive performance.

  20. A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

    International Nuclear Information System (INIS)

    Luo Xiao-Rong; Hu Gang-Yi; Zhang Zheng-Yuan; Luo Yin-Chun; Fan Ye; Wang Xiao-Wei; Fan Yuan-Hang; Cai Jin-Yong; Wang Pei; Zhou Kun

    2013-01-01

    A low specific on-resistance (R on,sp ) integrable silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is proposed and investigated by simulation. The MOSFET features a recessed drain as well as dual gates, which consist of a planar gate and a trench gate extended to the buried oxide layer (BOX) (DGRD MOSFET). First, the dual gates form dual conduction channels, and the extended trench gate also acts as a field plate to improve the electric field distribution. Second, the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path. Third, the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions. All of these sharply reduce R on,sp and maintain a high breakdown voltage (BV). The BV of 233 V and R on,sp of 4.151 mΩ·cm 2 (V GS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch. Compared with the trench gate SOI MOSFET and the conventional MOSFET, R on,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV, respectively. The trench gate extended to the BOX synchronously acts as a dielectric isolation trench, simplifying the fabrication processes. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

    Directory of Open Access Journals (Sweden)

    Bo Xie

    2015-09-01

    Full Text Available This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months, a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%.

  2. Advantages of combined touch screen technology and text hyperlink for the pathology grossing manual: a simple approach to access instructive information in biohazardous environments.

    Science.gov (United States)

    Qu, Zhenhong; Ghorbani, Rhonda P; Li, Hongyan; Hunter, Robert L; Hannah, Christina D

    2007-03-01

    Gross examination, encompassing description, dissection, and sampling, is a complex task and an essential component of surgical pathology. Because of the complexity of the task, standardized protocols to guide the gross examination often become a bulky manual that is difficult to use. This problem is further compounded by the high specimen volume and biohazardous nature of the task. As a result, such a manual is often underused, leading to errors that are potentially harmful and time consuming to correct-a common chronic problem affecting many pathology laboratories. To combat this problem, we have developed a simple method that incorporates complex text and graphic information of a typical procedure manual and yet allows easy access to any intended instructive information in the manual. The method uses the Object-Linking-and-Embedding function of Microsoft Word (Microsoft, Redmond, WA) to establish hyperlinks among different contents, and then it uses the touch screen technology to facilitate navigation through the manual on a computer screen installed at the cutting bench with no need for a physical keyboard or a mouse. It takes less than 4 seconds to reach any intended information in the manual by 3 to 4 touches on the screen. A 3-year follow-up study shows that this method has increased use of the manual and has improved the quality of gross examination. The method is simple and can be easily tailored to different formats of instructive information, allowing flexible organization, easy access, and quick navigation. Increased compliance to instructive information reduces errors at the grossing bench and improves work efficiency.

  3. Quantification, modelling and design for signal history dependent effects in mixed-signal SOI/SOS circuits; Quantification, modelisation et conception prenant en compte les etats anterieurs des signaux dans les circuits mixtes SOI/SOS

    Energy Technology Data Exchange (ETDEWEB)

    Edwards, C.F.; Redman-White, W.; Bracey, M.; Tenbroek, B.M.; Lee, M.S. [Southampton Univ., Dept. of Electronics and Computer Sciences (United Kingdom); Uren, M.J.; Brunson, K.M. [DERA Farnborough, GU, Hants (United Kingdom)

    1999-07-01

    This paper deals with how the radiation hardness of mixed signal SOI/SOS CMOS circuits is taken into account at both architectural terms as well as the the transistor level cell designs. The primary issue is to deal with divergent transistor threshold shifts, and to understand the effects of large amplitude non stationary signals on analogue cell behaviour. (authors)

  4. A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

    International Nuclear Information System (INIS)

    Jamali Mahabadi, S E; Orouji, Ali A; Keshavarzi, P; Moghadam, Hamid Amini

    2011-01-01

    In this paper, for the first time, we propose a partial silicon-on-insulator (P-SOI) lateral double-diffused metal-oxide-semiconductor-field-effect-transistor (LDMOSFET) with a modified buried layer in order to improve breakdown voltage (BV) and self-heating effects (SHEs). The main idea of this work is to control the electric field by shaping the buried layer. With two steps introduced in the buried layer, the electric field distribution is modified. Also a P-type window introduced makes the substrate share the vertical voltage drop, leading to a high vertical BV. Moreover, four interface electric field peaks are introduced by the buried P-layer, the Si window and two steps, which modulate the electric field in the SOI layer and the substrate. Hence, a more uniform electric field is obtained; consequently, a high BV is achieved. Furthermore, the Si window creates a conduction path between the active layer and substrate and alleviates the SHE. Two-dimensional simulations show that the BV of double step partial silicon on insulator is nearly 69% higher and alleviates SHEs 17% in comparison with its single step partial SOI counterpart and nearly 265% higher and alleviate SHEs 18% in comparison with its conventional SOI counterpart

  5. Quantification, modelling and design for signal history dependent effects in mixed-signal SOI/SOS circuits

    International Nuclear Information System (INIS)

    Edwards, C.F.; Redman-White, W.; Bracey, M.; Tenbroek, B.M.; Lee, M.S.; Uren, M.J.; Brunson, K.M.

    1999-01-01

    This paper deals with how the radiation hardness of mixed signal SOI/SOS CMOS circuits is taken into account at both architectural terms as well as the the transistor level cell designs. The primary issue is to deal with divergent transistor threshold shifts, and to understand the effects of large amplitude non stationary signals on analogue cell behaviour. (authors)

  6. SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Almad

    2009-01-01

    Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80

  7. Growth and characterization of InP/GaAs on SOI by MOCVD

    International Nuclear Information System (INIS)

    Karam, N.H.; Haven, V.; Vernon, S.M.; Namavar, F.; El-Masry, N.; Haegel, N.; Al-Jassin, M.M.

    1990-01-01

    This paper reports that epitaxial InP films have been successfully deposited on GaAs coated silicon wafers with a buried oxide for the first time by MOCVD. The SOI wafers were prepared using the Separation by Implantation of Oxygen (SIMOX) process. The quality of InP on SIMOX is comparable to the best of InP on Si deposited in the same reactor. Preliminary results on defect reduction techniques such as Thermal Cycle Growth (TCG) show an order of magnitude increase in the photoluminescence intensity and a factor of five reduction in the defect density. TCG has been found more effective than Thermal Cycle Annealing (TCA) in improving the crystalline perfection and optical properties of the deposited films

  8. Design of novel SOI 1 × 4 optical power splitter using seven horizontally slotted waveguides

    Science.gov (United States)

    Katz, Oded; Malka, Dror

    2017-07-01

    In this paper, we demonstrate a compact silicon on insulator (SOI) 1 × 4 optical power splitter using seven horizontal slotted waveguides. Aluminum nitride (AIN) surrounded by silicon (Si) was used to confine the optical field in the slot region. All of the power analysis has been done in transverse magnetic (TM) polarization mode and a compact optical power splitter as short as 14.5 μm was demonstrated. The splitter was designed by using full vectorial beam propagation method (FV-BPM) simulations. Numerical investigations show that this device can work across the whole C-band (1530-1565 nm) with excess loss better than 0.23 dB.

  9. Universal trench design method for a high-voltage SOI trench LDMOS

    Institute of Scientific and Technical Information of China (English)

    Hu Xiarong; Zhang Bo; Luo Xiaorong; Li Zhaoji

    2012-01-01

    The design method for a high-voltage SOl trench LDMOS for various trench permittivities,widths and depths is introduced.A universal method for efficient design is presented for the first time,taking the trade-off between breakdown voltage (BV) and specific on-resistance (Rs,on) into account.The high-k (relative permittivity)dielectric is suitable to fill a shallow and wide trench while the low-k dielectric is suitable to fill a deep and narrow trench.An SOI LDMOS with a vacuum trench in the drift region is also discussed.Simulation results show that the high FOM BV2/Rs,on can be achieved with a trench filled with the low-k dielectric due to its shortened cell-pitch.

  10. The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study

    International Nuclear Information System (INIS)

    Mohapatra, S K; Pradhan, K P; Sahu, P K; Pati, G S; Kumar, M R

    2014-01-01

    In this paper, the existing two-dimensional (2D) threshold voltage model for a dual material gate fully depleted strained silicon on insulator (DMG-FD-S-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is modified by considering the interface trapped charge effects. The interface trapped charge is a common phenomenon, and this charge cannot be neglected in nanoscale devices. For finding out the surface potential, parabolic approximation has been utilized and the virtual cathode potential method is used to formulate the threshold voltage. The developed threshold voltage model incorporates both positive as well as negative interface charges. Finally, validity of the presented model is verified with 2D device simulator Sentaurus™. (paper)

  11. The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study

    Science.gov (United States)

    Mohapatra, S. K.; Pradhan, K. P.; Sahu, P. K.; Pati, G. S.; Kumar, M. R.

    2014-12-01

    In this paper, the existing two-dimensional (2D) threshold voltage model for a dual material gate fully depleted strained silicon on insulator (DMG-FD-S-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is modified by considering the interface trapped charge effects. The interface trapped charge is a common phenomenon, and this charge cannot be neglected in nanoscale devices. For finding out the surface potential, parabolic approximation has been utilized and the virtual cathode potential method is used to formulate the threshold voltage. The developed threshold voltage model incorporates both positive as well as negative interface charges. Finally, validity of the presented model is verified with 2D device simulator Sentaurus™.

  12. SOI detector with drift field due to majority carrier flow - an alternative to biasing in depletion

    International Nuclear Information System (INIS)

    Trimpl, M.; Deptuch, G.; Yarema, R.

    2010-01-01

    This paper reports on a SOI detector with drift field induced by the flow of majority carriers. It is proposed as an alternative method of detector biasing compared to standard depletion. N-drift rings in n-substrate are used at the front side of the detector to provide charge collecting field in depth as well as to improve the lateral charge collection. The concept was verified on a 2.5 x 2.5 mm 2 large detector array with 20 (micro)m and 40 (micro)m pixel pitch fabricated in August 2009 using the OKI semiconductor process. First results, obtained with a radioactive source to demonstrate spatial resolution and spectroscopic performance of the detector for the two different pixel sizes will be shown and compared to results obtained with a standard depletion scheme. Two different diode designs, one using a standard p-implantation and one surrounded by an additional BPW implant will be compared as well.

  13. A simple electron multiplexer

    International Nuclear Information System (INIS)

    Dobrzynski, L; Akjouj, A; Djafari-Rouhani, B; Al-Wahsh, H; Zielinski, P

    2003-01-01

    We present a simple multiplexing device made of two atomic chains coupled by two other transition metal atoms. We show that this simple atomic device can transfer electrons at a given energy from one wire to the other, leaving all other electron states unaffected. Closed-form relations between the transmission coefficients and the inter-atomic distances are given to optimize the desired directional electron ejection. Such devices can be adsorbed on insulating substrates and characterized by current surface technologies. (letter to the editor)

  14. Simple solution

    Energy Technology Data Exchange (ETDEWEB)

    Wells, Paul

    2011-07-01

    FP Marangoni Inc., a Calgary-based service company, is presently the only oilfield service company in the world to have successfully established a way to blend vacuum and rig shakers to recapture oil-based mud, or any drilling fluid for that matter. Their VAC-Screen system is presently being utilized by several operators and has the potential to be used across a wide spectrum of drilling applications. The rotary vacuum dryer fluid recovery and cuttings drying system degraded the drilling cuttings that it processes and when this occurs, some of that stuff gets in the recovered fluid and it becomes very difficult to remove particles that are below 20 microns. Currently, VAC-Screen technology is running on about 20 rigs in Canada and the US, and more producers are showing a keen interest in using the technology. The VAC-Screen technology reduces costs and environmental impact. The main benefit is that the recovered fluid has no detrimental effects on the drilling fluid system. The going rental rate for the system is 30 per cent of the cost of competitive quality systems.

  15. Jean-Pierre Famose et Jean Bertsch, L’estime de soi : une controverse éducative, Paris, PUF, 2009, 192 p

    OpenAIRE

    Benamar, Aïcha

    2015-01-01

    L’ouvrage porte sur l’estime de soi, dans la sphère sociale en général et le monde éducatif en particulier. L’estime de soi est au cœur du comportement individuel, apportant confiance et assurance, permettant de progresser et in fine de réussir. Une faible estime de soi est fréquemment à l’origine de difficultés pour un individu : doutes, hésitations, ou à l’inverse vanité et arrogance. Un bon niveau d’estime de soi confère à la personnalité : capacité à s’affirmer et respect des autres. Cent...

  16. A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

    Science.gov (United States)

    Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

    2015-05-01

    This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

  17. A new SOI high-voltage device with a step-thickness drift region and its analytical model for the electric field and breakdown voltage

    International Nuclear Information System (INIS)

    Luo Xiaorong; Zhang Wei; Zhang Bo; Li Zhaoji; Yang Shouguo; Zhan Zhan; Fu Daping

    2008-01-01

    A new SOI high-voltage device with a step-thickness drift region (ST SOI) and its analytical model for the two-dimension electric field distribution and the breakdown voltage are proposed. The electric field in the drift region is modulated and that of the buried layer is enhanced by the variable thickness SOI layer, thereby resulting in the enhancement of the breakdown voltage. Based on the Poisson equation, the expression for the two-dimension electric field distribution is presented taking the modulation effect into account, from which the RESURF (REduced SURface Field) condition and the approximate but explicit expression for the maximal breakdown voltage are derived. The analytical model can explain the effects of the device parameters, such as the step height and the step length of the SOI layer, the doping concentration and the buried oxide thickness, on the electric field distribution and the breakdown voltage. The validity of this model is demonstrated by a comparison with numerical simulations. Improvement on both the breakdown voltage and the on-resistance (R on ) for the ST SOI is obtained due to the variable thickness SOI layer

  18. Boron impurity at the Si/SiO2 interface in SOI wafers and consequences for piezoresistive MEMS devices

    International Nuclear Information System (INIS)

    Nafari, A; Karlen, D; Enoksson, P; Rusu, C; Svensson, K

    2009-01-01

    In this work, the electrical performance of piezoresistive devices fabricated on thinned SOI wafers has been investigated. Specifically, SOI wafers manufactured with the standard bond-and-etch back method (BESOI), commonly used for MEMS fabrication, have been studied. Results from electrical measurements and SIMS characterization show the presence of a boron impurity close to the buried oxide, even on unprocessed wafers. If the boron impurity overlaps with the piezoresistors on the device, it can create non-defined pn-junctions and thus allow conduction through the substrate, leading to stray connections and excessive noise. The thickness of the boron impurity can extend up to several µm, thus setting a thickness limit for the thinnest parts of a MEMS device. This work shows how this impurity can fundamentally affect the functionality of piezoresistive devices. Design rules of how to avoid this are presented

  19. Comparison of short-circuit characteristics of trench gate and planar gate U-shaped channel SOI-LIGBTs

    Science.gov (United States)

    Zhang, Long; Zhu, Jing; Sun, Weifeng; Zhao, Minna; Huang, Xuequan; Chen, Jiajun; Shi, Longxing; Chen, Jian; Ding, Desheng

    2017-09-01

    Comparison of short-circuit (SC) characteristics of 500 V rated trench gate U-shaped channel (TGU) SOI-LIGBT and planar gate U-shaped channel (PGU) SOI-LIGBT is made for the first time in this paper. The on-state carrier profile of the TGU structure is reshaped by the dual trenches (a gate trench G1 and a hole barrier trench G2), which leads to a different conduction behavior from that of the PGU structure. The TGU structure exhibits a higher latchup immunity but a severer self-heating effect. At current density (JC) 640 A/cm2. Comparison of layouts and fabrication processes are also made between the two types of devices.

  20. Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2010-01-01

    The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.

  1. Hybrid orientation technology and strain engineering for ultra-high ...

    Indian Academy of Sciences (India)

    Abstract. We report here RF MOSFET performance in sub-45-nm hybrid orientation CMOS technology. Based ... can provide a greater benefit for hole mobility (Yang et al. 2003). ... types of structures; type-I with p-FET on the (110) SOI and.

  2. A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

    Science.gov (United States)

    Fu, Qiang; Zhang, Wan-Rong; Jin, Dong-Yue; Zhao, Yan-Xiao; Wang, Xiao

    2016-12-01

    The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of fT×BVCEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness (TBOX) on fT, BVCEO, and the FOM of fT×BVCEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEO to some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT, BVCEO, and the FOM of fT×BVCEO can be improved by increasing SOI insulator SiO2 layer thickness TBOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEO is improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer

  3. A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

    International Nuclear Information System (INIS)

    Fu Qiang; Zhang Wan-Rong; Jin Dong-Yue; Zhao Yan-Xiao; Wang Xiao

    2016-01-01

    The product of the cutoff frequency and breakdown voltage ( f T ×BV CEO ) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N + -buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of f T ×BV CEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness ( T BOX ) on f T , BV CEO , and the FOM of f T ×BV CEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces f T , slightly increases BV CEO to some extent, but ultimately degrades the FOM of f T ×BV CEO . Although the f T , BV CEO , and the FOM of f T ×BV CEO can be improved by increasing SOI insulator SiO 2 layer thickness T BOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO 2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick T BOX , a thin N + -buried layer is introduced into collector region to not only improve the FOM of f T ×BV CEO , but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N + -buried layer in collector region is investigated in detail. The result show that the FOM of f T ×BV CEO is improved and the device temperature decreases as the N + -buried layer shifts toward SOI substrate insulation layer

  4. SOI detector with drift field due to majority carrier flow - an alternative to biasing in depletion

    Energy Technology Data Exchange (ETDEWEB)

    Trimpl, M.; Deptuch, G.; Yarema, R.; /Fermilab

    2010-11-01

    This paper reports on a SOI detector with drift field induced by the flow of majority carriers. It is proposed as an alternative method of detector biasing compared to standard depletion. N-drift rings in n-substrate are used at the front side of the detector to provide charge collecting field in depth as well as to improve the lateral charge collection. The concept was verified on a 2.5 x 2.5 mm{sup 2} large detector array with 20 {micro}m and 40 {micro}m pixel pitch fabricated in August 2009 using the OKI semiconductor process. First results, obtained with a radioactive source to demonstrate spatial resolution and spectroscopic performance of the detector for the two different pixel sizes will be shown and compared to results obtained with a standard depletion scheme. Two different diode designs, one using a standard p-implantation and one surrounded by an additional BPW implant will be compared as well.

  5. Compact Si-based asymmetric MZI waveguide on SOI as a thermo-optical switch

    Science.gov (United States)

    Rizal, C. S.; Niraula, B.

    2018-03-01

    A compact low power consuming asymmetric MZI based optical modulator with fast response time has been proposed on SOI platform. The geometrical and performance characteristics were analyzed in depth and optimized using coupled mode analysis and FDTD simulation tools, respectively. It was tested with and without implementation of thermo-optic (TO) effect. The device showed good frequency modulating characteristics when tested without the implementation of the TO effect. The fabricated device showed quality factor, Q ≈ 10,000, and this value is comparable to the Q of the device simulated with 25% transmission loss, showing FSR of 0.195 nm, FWHM ≈ 0.16 nm, and ER of 13 dB. With TO effect, it showed temperature sensitivity of 0.01 nm/°C and FSR of 0.19 nm. With the heater length of 4.18 mm, the device required 0.26 mW per π shift power with a switching voltage of 0.309 V, response time of 10 μ, and figure-of-merit of 2.6 mW μs. All of these characteristics make this device highly attractive for use in integrated Si photonics network as optical switch and wavelength modulator.

  6. Design and fabrication of two kind of SOI-based EA-type VOAs

    Science.gov (United States)

    Yuan, Pei; Wang, Yue; Wu, Yuanda; An, Junming; Hu, Xiongwei

    2018-06-01

    SOI-based variable optical attenuators based on electro-absorption mechanism are demonstrated in this paper. Two different doping structures are adopted to realize the attenuation: a structure with a single lateral p-i-n diode and a structure with several lateral p-i-n diodes connected in series. The VOAs with lateral p-i-n diodes connected in series (series VOA) can greatly improve the device attenuation efficiency compared to VOAs with a single lateral p-i-n diode structure (single VOA), which is verified by the experimental results that the attenuation efficiency of the series VOA and the single VOA is 3.76 dB/mA and 0.189 dB/mA respectively. The corresponding power consumption at 20 dB attenuation is 202 mW (series VOA) and 424 mW (single VOA) respectively. The raise time is 34.5 ns (single VOA) and 45.5 ns (series VOA), and the fall time is 37 ns (single VOA) and 48.5 ns (series VOA).

  7. High temperature piezoresistive {beta}-SiC-on-SOI pressure sensor for combustion engines

    Energy Technology Data Exchange (ETDEWEB)

    Berg, J. von; Ziermann, R.; Reichert, W.; Obermeier, E. [Tech. Univ. Berlin (Germany). Microsensor and Actuator Technol. Center; Eickhoff, M.; Kroetz, G. [Daimler Benz AG, Munich (Germany); Thoma, U.; Boltshauser, T.; Cavalloni, C. [Kistler Instrumente AG, Winterthur (Switzerland); Nendza, J.P. [TRW Deutschland GmbH, Barsinghausen (Germany)

    1998-08-01

    For measuring the cylinder pressure in combustion engines of automobiles a high temperature pressure sensor has been developed. The sensor is made of a membrane based piezoresistive {beta}-SiC-on-SOI (SiCOI) sensor chip and a specially designed housing. The SiCOI sensor was characterized under static pressures of up to 200 bar in the temperature range between room temperature and 300 C. The sensitivity of the sensor at room temperature is approximately 0.19 mV/bar and decreases to about 0.12 mV/bar at 300 C. For monitoring the dynamic cylinder pressure the sensor was placed into the combustion chamber of a gasoline engine. The measurements were performed at 1500 rpm under different loads, and for comparison a quartz pressure transducer from Kistler AG was used as a reference. The maximum pressure at partial load operation amounts to about 15 bar. The difference between the calibrated SiCOI sensor and the reference sensor is significantly less than 1 bar during the whole operation. (orig.) 8 refs.

  8. Design and application of 8-channel SOI-based AWG demultiplexer for CWDM-system

    International Nuclear Information System (INIS)

    Juhari, Nurjuliana; Menon, P. Susthitha; Ehsan, Abang Annuar; Shaari, Sahbudin

    2015-01-01

    Arrayed Waveguide Grating (AWG) serving as a demultiplexer (demux) has been designed on SOI platform and was utilized in a Coarse Wavelength Division Multiplexing (CWDM) system ranging from 1471 nm to 1611 nm. The investigation was carried out at device and system levels. At device level, 20 nm (∼ 2500 GHz) channel spacing was successfully simulated using beam propagation method (BPM) under TE mode polarization with a unique double S-shape pattern at arrays region. The performance of optical properties gave the low values of 0.96 dB dB for insertion loss and – 22.38 dB for optical crosstalk. AWG device was then successfully used as demultiplexer in CWDM system when 10 Gb/s data rate was applied in the system. Limitation of signal power due to attenuation and fiber dispersion detected by BER analyzer =10 −9 of the system was compared with theoretical value. Hence, the maximum distance of optical fiber can be achieved

  9. Design and application of 8-channel SOI-based AWG demultiplexer for CWDM-system

    Energy Technology Data Exchange (ETDEWEB)

    Juhari, Nurjuliana; Menon, P. Susthitha; Ehsan, Abang Annuar; Shaari, Sahbudin [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor (Malaysia)

    2015-04-24

    Arrayed Waveguide Grating (AWG) serving as a demultiplexer (demux) has been designed on SOI platform and was utilized in a Coarse Wavelength Division Multiplexing (CWDM) system ranging from 1471 nm to 1611 nm. The investigation was carried out at device and system levels. At device level, 20 nm (∼ 2500 GHz) channel spacing was successfully simulated using beam propagation method (BPM) under TE mode polarization with a unique double S-shape pattern at arrays region. The performance of optical properties gave the low values of 0.96 dB dB for insertion loss and – 22.38 dB for optical crosstalk. AWG device was then successfully used as demultiplexer in CWDM system when 10 Gb/s data rate was applied in the system. Limitation of signal power due to attenuation and fiber dispersion detected by BER analyzer =10{sup −9} of the system was compared with theoretical value. Hence, the maximum distance of optical fiber can be achieved.

  10. Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

    Science.gov (United States)

    Olszacki, M.; Maj, C.; Bahri, M. Al; Marrot, J.-C.; Boukabache, A.; Pons, P.; Napieralski, A.

    2010-06-01

    Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 1017 at cm-3 to 1.6 × 1019 at cm-3. The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 1018-1019 at cm-3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

  11. Athermal and wavelength-trimmable photonic filters based on TiO₂-cladded amorphous-SOI.

    Science.gov (United States)

    Lipka, Timo; Moldenhauer, Lennart; Müller, Jörg; Trieu, Hoc Khiem

    2015-07-27

    Large-scale integrated silicon photonic circuits suffer from two inevitable issues that boost the overall power consumption. First, fabrication imperfections even on sub-nm scale result in spectral device non-uniformity that require fine-tuning during device operation. Second, the photonic devices need to be actively corrected to compensate thermal drifts. As a result significant amount of power is wasted if no athermal and wavelength-trimmable solutions are utilized. Consequently, in order to minimize the total power requirement of photonic circuits in a passive way, trimming methods are required to correct the device inhomogeneities from manufacturing and athermal solutions are essential to oppose temperature fluctuations of the passive/active components during run-time. We present an approach to fabricate CMOS backend-compatible and athermal passive photonic filters that can be corrected for fabrication inhomogeneities by UV-trimming based on low-loss amorphous-SOI waveguides with TiO2 cladding. The trimming of highly confined 10 μm ring resonators is proven over a free spectral range retaining athermal operation. The athermal functionality of 2nd-order 5 μm add/drop microrings is demonstrated over 40°C covering a broad wavelength interval of 60 nm.

  12. Analysis of the rectangular resonator with butterfly MMI coupler using SOI

    Science.gov (United States)

    Kim, Sun-Ho; Park, Jun-Hee; Kim, Eudum; Jeon, Su-Jin; Kim, Ji-Hoon; Choi, Young-Wan

    2018-02-01

    We propose a rectangular resonator sensor structure with butterfly MMI coupler using SOI. It consists of the rectangular resonator, total internal reflection (TIR) mirror, and the butterfly MMI coupler. The rectangular resonator is expected to be used as bio and chemical sensors because of the advantages of using MMI coupler and the absence of bending loss unlike ring resonators. The butterfly MMI coupler can miniaturize the device compared to conventional MMI by using a linear butterfly shape instead of a square in the MMI part. The width, height, and slab height of the rib type waveguide are designed to be 1.5 μm, 1.5 μm, and 0.9 μm, respectively. This structure is designed as a single mode. When designing a TIR mirror, we considered the Goos-Hänchen shift and critical angle. We designed 3:1 MMI coupler because rectangular resonator has no bending loss. The width of MMI is designed to be 4.5 μm and we optimize the length of the butterfly MMI coupler using finite-difference time-domain (FDTD) method for higher Q-factor. It has the equal performance with conventional MMI even though the length is reduced by 1/3. As a result of the simulation, Qfactor of rectangular resonator can be obtained as 7381.

  13. Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

    Science.gov (United States)

    Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

    2016-09-01

    In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

  14. On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

    International Nuclear Information System (INIS)

    Wu Hao; Xu Miao; Wan Guangxing; Zhu Huilong; Zhao Lichuan; Tong Xiaodong; Zhao Chao; Chen Dapeng; Ye Tianchun

    2014-01-01

    The importance of substrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide (ES-UB-MOSFETs) is demonstrated by simulation. A new substrate/backgate doping engineering, lateral non-uniform dopant distributions (LNDD) is investigated in ES-UB-MOSFETs. The effects of LNDD on device performance, V t -roll-off, channel mobility and random dopant fluctuation (RDF) are studied and optimized. Fixing the long channel threshold voltage (V t ) at 0.3 V, ES-UB-MOSFETs with lateral uniform doping in the substrate and forward back bias can scale only to 35 nm, meanwhile LNDD enables ES-UB-MOSFETs to scale to a 20 nm gate length, which is 43% smaller. The LNDD degradation is 10% of the carrier mobility both for nMOS and pMOS, but it is canceled out by a good short channel effect controlled by the LNDD. Fixing V t at 0.3 V, in long channel devices, due to more channel doping concentration for the LNDD technique, the RDF in LNDD controlled ES-UB-MOSFETs is worse than in back-bias controlled ES-UB-MOSFETs, but in the short channel, the RDF for LNDD controlled ES-UB-MOSFET is better due to its self-adaption of substrate doping engineering by using a fixed thickness inner-spacer. A novel process flow to form LNDD is proposed and simulated. (semiconductor devices)

  15. Molecular sensing using monolayer floating gate, fully depleted SOI MOSFET acting as an exponential transducer.

    Science.gov (United States)

    Takulapalli, Bharath R

    2010-02-23

    Field-effect transistor-based chemical sensors fall into two broad categories based on the principle of signal transduction-chemiresistor or Schottky-type devices and MOSFET or inversion-type devices. In this paper, we report a new inversion-type device concept-fully depleted exponentially coupled (FDEC) sensor, using molecular monolayer floating gate fully depleted silicon on insulator (SOI) MOSFET. Molecular binding at the chemical-sensitive surface lowers the threshold voltage of the device inversion channel due to a unique capacitive charge-coupling mechanism involving interface defect states, causing an exponential increase in the inversion channel current. This response of the device is in opposite direction when compared to typical MOSFET-type sensors, wherein inversion current decreases in a conventional n-channel sensor device upon addition of negative charge to the chemical-sensitive device surface. The new sensor architecture enables ultrahigh sensitivity along with extraordinary selectivity. We propose the new sensor concept with the aid of analytical equations and present results from our experiments in liquid phase and gas phase to demonstrate the new principle of signal transduction. We present data from numerical simulations to further support our theory.

  16. Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

    International Nuclear Information System (INIS)

    Olszacki, M; Maj, C; Al Bahri, M; Marrot, J-C; Boukabache, A; Pons, P; Napieralski, A

    2010-01-01

    Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 10 17 at cm −3 to 1.6 × 10 19 at cm −3 . The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 10 18 –10 19 at cm −3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

  17. Line-edge roughness induced single event transient variation in SOI FinFETs

    International Nuclear Information System (INIS)

    Wu Weikang; An Xia; Jiang Xiaobo; Chen Yehua; Liu Jingjing; Zhang Xing; Huang Ru

    2015-01-01

    The impact of process induced variation on the response of SOI FinFET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When FinFET biased at OFF state configuration (V gs = 0, V ds = V dd ) is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse (single event transient, SET) is consequently formed. The results reveal that with the presence of line-edge roughness (LER), which is one of the major variation sources in nano-scale FinFETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered: type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters, correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size. (paper)

  18. InP on SOI devices for optical communication and optical network on chip

    Science.gov (United States)

    Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

    2011-01-01

    For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

  19. Blog : un journal intime comme mémoire de soi

    Directory of Open Access Journals (Sweden)

    Nolwenn Hénaff

    2011-08-01

    Full Text Available Tenir un journal est devenu, pour un individu, une manière possible de vivre, ou d’accompagner un moment de sa vie (Lejeune, 2006. Les usages sont donc multiples : construction d’une identité narrative, fixation du temps, libération du moi, introspection, outil de contrôle, de soutien, méthode d’organisation de la pensée, plaisir d’écrire. Si l’écriture papier reste la forme la plus courante du récit biographique, d’autres supports médiatiques comme la télévision ou la radio sont venus offrir de nouveaux terrains d’expérimentation de ces récits de soi. Plus récemment, l’avènement d’Internet et de ses outils simplifiés de publication ont fait émerger des formes biographiques innovantes. Pourtant, qu’il s’agisse de traverser une crise, de garder la mémoire d’une expérience forte, ou, plus ordinairement, de relater ses vacances et ses voyages, le journal se positionne avant tout, et résolument, comme un espace de liberté : on écrit quand on veut, comme on veut. Le « Souci de soi » comme dirait Foucault, l’espace dominé par les sensations, et la temporalité marquée par la notion d’instants, de moments ayant une connotation expressément personnelle sont autant d’indices révélant la pratique de l’écriture intime en ligne. Le blog apparaît à des moments de vie et accompagne souvent des tournants biographiques (ruptures, questionnement mais aussi nouveaux apprentissages, nouvelles rencontres, etc.. Nous proposons dans cet article d’analyser le blog en tant que support de mémoire personnelle et d’étudier à travers des exemples concrets les stratégies développées par les blogueurs pour se créer via ce dispositif communicationnel innovant un « espace de conserverie de soi » en ligne.Keeping a journal has become a way of live, or to moment a moment in one’s life (Lejeune, 2006. It has multiple uses: construction of a narrative identity, marking time, liberating the

  20. A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

    Science.gov (United States)

    Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

    2015-09-01

    In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

  1. Modulation of the SSTA decadal variation on ENSO events and relationships of SSTA With LOD,SOI, etc

    Science.gov (United States)

    Liao, D. C.; Zhou, Y. H.; Liao, X. H.

    2007-01-01

    Interannual and decadal components of the length of day (LOD), Southern Oscillation Index (SOI) and Sea Surface Temperature anomaly (SSTA) in Nino regions are extracted by band-pass filtering, and used for research of the modulation of the SSTA on the ENSO events. Results show that besides the interannual components, the decadal components in SSTA have strong impacts on monitoring and representing of the ENSO events. When the ENSO events are strong, the modulation of the decadal components of the SSTA tends to prolong the life-time of the events and enlarge the extreme anomalies of the SST, while the ENSO events, which are so weak that they can not be detected by the interannual components of the SSTA, can also be detected with the help of the modulation of the SSTA decadal components. The study further draws attention to the relationships of the SSTA interannual and decadal components with those of LOD, SOI, both of the sea level pressure anomalies (SLPA) and the trade wind anomalies (TWA) in tropic Pacific, and also with those of the axial components of the atmospheric angular momentum (AAM) and oceanic angular momentum (OAM). Results of the squared coherence and coherent phases among them reveal close connections with the SSTA and almost all of the parameters mentioned above on the interannual time scales, while on the decadal time scale significant connections are among the SSTA and SOI, SLPA, TWA, ?3w and ?3w+v as well, and slight weaker connections between the SSTA and LOD, ?3pib and ?3bp

  2. Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Lo, Cheuk Chi; Persaud, Arun; Dhuey, Scott; Olynick, Deirdre; Borondics, Ferenc; Martin, Michael C.; Bechtel, Hans A.; Bokor, Jeffrey; Schenkel, Thomas

    2009-06-10

    We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual 29Si nuclear spin bath, making isotopically enriched nuclear spin-free 28Si substrates a promising candidate for forming spin quantum bit devices. The FinFET architecture is fully compatible with single-ion implant detection for donor-based qubits, and the donor spin-state readout through electrical detection of spin resonance. We describe device processing steps and discuss results on electrical transport measurements at 0.3 K.

  3. Modeling and analysis of surface potential of single gate fully depleted SOI MOSFET using 2D-Poisson's equation

    Science.gov (United States)

    Mani, Prashant; Tyagi, Chandra Shekhar; Srivastav, Nishant

    2016-03-01

    In this paper the analytical solution of the 2D Poisson's equation for single gate Fully Depleted SOI (FDSOI) MOSFET's is derived by using a Green's function solution technique. The surface potential is calculated and the threshold voltage of the device is minimized for the low power consumption. Due to minimization of threshold voltage the short channel effect of device is suppressed and after observation we obtain the device is kink free. The structure and characteristics of SingleGate FDSOI MOSFET were matched by using MathCAD and silvaco respectively.

  4. Mechanisms of Low-Energy Operation of XCT-SOI CMOS Devices—Prospect of Sub-20-nm Regime

    Directory of Open Access Journals (Sweden)

    Yasuhisa Omura

    2014-01-01

    Full Text Available This paper describes the performance prospect of scaled cross-current tetrode (XCT CMOS devices and demonstrates the outstanding low-energy aspects of sub-30-nm-long gate XCT-SOI CMOS by analyzing device operations. The energy efficiency improvement of such scaled XCT CMOS circuits (two orders higher stems from the “source potential floating effect”, which offers the dynamic reduction of effective gate capacitance. It is expected that this feature will be very important in many medical implant applications that demand a long device lifetime without recharging the battery.

  5. Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence

    Directory of Open Access Journals (Sweden)

    Khoverko Yu. N.

    2010-10-01

    Full Text Available The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2—300 К and high magnetic fields were investigated. It was found that heavily doped laser recrystallized polysilicon on insulator layers show its radiation resistance under irradiation with high-energy electrons and magnetoresistance of such material remains quite low in magnetic field about 14 T does not exceed 1—2%. Such qulity can be applied in designing of microelectronic sensors of mechanical values operable in hard conditions of exploitation.

  6. A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

    Science.gov (United States)

    Priya, Anjali; Mishra, Ram Awadh

    2016-04-01

    In this paper, analytical modeling of surface potential is proposed for new Triple Metal Gate (TMG) fully depleted Recessed-Source/Dain Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The metal with the highest work function is arranged near the source region and the lowest one near the drain. Since Recessed-Source/Drain SOI MOSFET has higher drain current as compared to conventional SOI MOSFET due to large source and drain region. The surface potential model developed by 2D Poisson's equation is verified by comparison to the simulation result of 2-dimensional ATLAS simulator. The model is compared with DMG and SMG devices and analysed for different device parameters. The ratio of metal gate length is varied to optimize the result.

  7. Directly Modulated and ER Enhanced Hybrid III-V/SOI DFB Laser Operating up to 20 Gb/s for Extended Reach Applications in PONs

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Da Ros, Francesco; Chaibi, Mohamed E.

    2017-01-01

    We demonstrate error-free performance of an MRR filtered DML on the SOI platform over 40- and 81-km of SSW. The device operates up to 17.5 Gb/s over 81 km and 20 Gb/s over 40 km.......We demonstrate error-free performance of an MRR filtered DML on the SOI platform over 40- and 81-km of SSW. The device operates up to 17.5 Gb/s over 81 km and 20 Gb/s over 40 km....

  8. Sustainable development - billions of watts under the seas - Marine current turbines play simple - Technological waves; Developpement durable - Des milliards de watts sous les mers - Les hydroliennes jouent la simplicite - Vagues technologiques

    Energy Technology Data Exchange (ETDEWEB)

    Lucas, Th.

    2011-10-27

    The author evokes the opportunities of power generation by the development of sea current or tidal stream turbines. Some developments are already tested by Norwegian, French, Danish, British and American companies. Some specific turbines are briefly presented. In order to reduce the cost of the electricity production from sea currents, manufacturers are using simple and robust technologies, and exploit the experience gained on wind turbines. Some designs and prototypes are evoked for the production of electricity by sea waves (Pelamis and Oyster projects). Principles, strengths and production projects are briefly indicated. The challenge of maintenance in sea environment is outlined for these projects

  9. A CMOS/SOI Single-input PWM Discriminator for Low-voltage Body-implanted Applications

    Directory of Open Access Journals (Sweden)

    Jader A. De Lima

    2002-01-01

    Full Text Available A CMOS/SOI circuit to decode Pulse-Width Modulation (PWM signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique is based on a novel double-integration concept and does not require low-pass filtering. Non-overlapping control phases are internally derived from the incoming pulses and a fast-settling comparator ensures good discrimination accuracy in the megahertz range. The circuit was integrated on a 2 μm single-metal thin-film CMOS/SOI fabrication process and has an effective area of 2 mm2. Measured resolution of encoding parameter α is better than 10% at 6 MHz and VDD = 3.3 V. Idle-mode consumption is 340 μW. Pulses of frequencies up to15 MHz and α =10% can be discriminated for 2.3 V ≤ VDD ≤ 3.3 V. Such an excellent immunity to VDD deviations meets a design specification with respect to inherent coupling losses on transmitting data and power by means of a transcutaneous link.

  10. Optimal Design of an Ultrasmall SOI-Based 1 × 8 Flat-Top AWG by Using an MMI

    Directory of Open Access Journals (Sweden)

    Hongqiang Li

    2013-01-01

    Full Text Available Four methods based on a multimode interference (MMI structure are optimally designed to flatten the spectral response of silicon-on-insulator- (SOI- based arrayed-waveguide grating (AWG applied in a demodulation integration microsystem. In the design for each method, SOI is selected as the material, the beam propagation method is used, and the performances (including the 3 dB passband width, the crosstalk, and the insertion loss of the flat-top AWG are studied. Moreover, the output spectrum responses of AWGs with or without a flattened structure are compared. The results show that low insertion loss, crosstalk, and a flat and efficient spectral response are simultaneously achieved for each kind of structure. By comparing the four designs, the design that combines a tapered MMI with tapered input/output waveguides, which has not been previously reported, was shown to yield better results than others. The optimized design reduced crosstalk to approximately −21.9 dB and had an insertion loss of −4.36 dB and a 3 dB passband width, that is, approximately 65% of the channel spacing.

  11. Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

    Science.gov (United States)

    Li, Zhibo; Wang, Mengqi; Fang, Xin; Li, Yajie; Zhou, Xuliang; Yu, Hongyan; Wang, Pengfei; Wang, Wei; Pan, Jiaoqing

    2018-02-01

    A direct epitaxy of III-V nanowires with InGaAs/InP multiple quantum wells on v-shaped trenches patterned silicon on insulator (SOI) substrates was realized by combining the standard semiconductor fabrication process with the aspect ratio trapping growth technique. Silicon thickness as well as the width and gap of each nanowire were carefully designed to accommodate essential optical properties and appropriate growth conditions. The III-V element ingredient, crystalline quality, and surface topography of the grown nanowires were characterized by X-ray diffraction spectroscopy, photoluminescence, and scanning electron microscope. Geometrical details and chemical information of multiple quantum wells were revealed by transmission electron microscopy and energy dispersive spectroscopy. Numerical simulations confirmed that the optical guided mode supported by one single nanowire was able to propagate 50 μm with ˜30% optical loss. This proposed integration scheme opens up an alternative pathway for future photonic integrations of III-V devices on the SOI platform at nanoscale.

  12. Simple Kidney Cysts

    Science.gov (United States)

    ... Solitary Kidney Your Kidneys & How They Work Simple Kidney Cysts What are simple kidney cysts? Simple kidney cysts are abnormal, fluid-filled ... that form in the kidneys. What are the kidneys and what do they do? The kidneys are ...

  13. Uniform superhydrophobic surfaces using micro/nano complex structures formed spontaneously by a simple and cost-effective nonlithographic process based on anodic aluminum oxide technology

    International Nuclear Information System (INIS)

    Kim, Dae-Ho; Cho, Chae-Ryong; Kim, Jong-Man; Kim, Yongsung; Kim, Byung Min; Ko, Jong Soo

    2011-01-01

    This paper presents a uniform micro/nano double-roughened superhydrophobic surface with a high static contact angle (CA) and low contact angle hysteresis (CAH). The proposed micro/nano complex structured surfaces were self-fabricated simply and efficiently using a very simple and low-cost nonlithographic sequential process, which consists of aluminum (Al) sputtering, anodization of the Al layer and pore widening, without specific equipment and additional subsequent processes. The wetting properties of the fabricated surfaces were characterized by measuring the static CAs and the CAHs after plasma polymerized fluorocarbon coating with a low surface energy. The measured static CA and CAH were 154 ± 2.3° and 5.7 ± 0.8°, respectively, showing that the fabricated double-roughened surfaces exhibit superhydrophobic behaviors clearly. In addition, the proposed double-scaled surfaces at a wafer-level exhibited uniform superhydrophobic behaviors across the wafer with an apparent CA and CAH of 153.9 ± 0.8° and 4.9 ± 1.3°, respectively.

  14. Preparation of SmBCO layer for the surface optimization of GdYBCO film by MOCVD process based on a simple self-heating technology

    Science.gov (United States)

    Zhao, Ruipeng; Zhang, Fei; Liu, Qing; Xia, Yudong; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

    2018-07-01

    The MOCVD process was adopted to grow the REBa2Cu3O7-δ ((REBCO), RE = rare earth elements) films on the LaMnO3 (LMO) templates. Meanwhile, the LMO-template tapes are heated by the joule effect after applying a heating current through the Hastelloy metal substrates. The surface of GdYBCO films prepared by MOCVD method is prone to form outgrowths. So the surface morphology of GdYBCO film is optimized by depositing the SmBCO layer, which is an important process method for the preparation of high-quality multilayer REBCO films. At last, the GdYBCO/SmBCO/GdYBCO multilayer films were successfully prepared on the LMO templates based on the simple self-heating method. It is demonstrated that the GdYBCO surface was well improved by the characterization analysis of scanning electron microscope. And the Δω of REBCO (005) and Δφ of REBCO (103), which were performed by an X-ray diffraction system, are respectively 1.3° and 3.3° What's more, the critical current density (Jc) has been more than 3 MA/cm2 (77 K, 0 T) and the critical current (Ic) basically shows a trend of good linear increase with the increase of the number of REBCO layers.

  15. The Effective of Using 5 Simple Steps (QSCCS) Learning Activities on Facebook to Promote Self-Learning in the 21st Century in Technology Printing and Advertising Course for Undergraduate Students in Education Technology and Communications

    Science.gov (United States)

    Sittiwong, Tipparat; Wongnam, Thanet

    2015-01-01

    The objectives of this study were to: 1) study the result of implementing QSCCS with Facebook; 2) study students' opinions concerning the implementation of QSCCS with Facebook. The samples were 38 Technology and Communications undergraduates who attended Printing and Advertising Technology course in academic year of 2013. The information was…

  16. Error-free Dispersion-uncompensated Transmission at 20 Gb/s over SSMF using a Hybrid III-V/SOI DML with MRR Filtering

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Kamchevska, Valerija; Ding, Yunhong

    2016-01-01

    Error-free 20-Gb/s directly-modulated transmission is achieved by enhancing the dispersion tolerance of a III-V/SOI DFB laser with a silicon micro-ring resonator. Low (∼0.4 dB) penalty compared to back-to-back without ring is demonstrated after 5-km SSMF....

  17. Structural Make-up, Biopolymer Conformation, and Biodegradation Characteristics of Newly Developed Super Genotype of Oats (CDC SO-I vs. Conventional Varieties): Novel Approach

    International Nuclear Information System (INIS)

    Damiran, D.; Yu, P.

    2010-01-01

    Recently, a new 'super' genotype of oats (CDC SO-I or SO-I) has been developed. The objectives of this study were to determine structural makeup (features) of oat grain in endosperm and pericarp regions and to reveal and identify differences in protein amide I and II and carbohydrate structural makeup (conformation) between SO-I and two conventional oats (CDC Dancer and Derby) grown in western Canada in 2006, using advanced synchrotron radiation based Fourier transform infrared microspectroscopy (SRFTIRM). The SRFTIRM experiments were conducted at National Synchrotron Light Sources, Brookhaven National Laboratory (NSLS, BNL, U.S. Department of Energy). From the results, it was observed that comparison between the new genotype oats and conventional oats showed (1) differences in basic chemical and protein subfraction profiles and energy values with the new SO-I oats containing lower lignin (21 g/kg of DM) and higher soluble crude protein (530 g/kg CP), crude fat (59 g/kg of DM), and energy values (TDN, 820 g/kg of DM; NE L3x , 7.8 MJ/kg of DM); (2) significant differences in rumen biodegradation kinetics of dry matter, starch, and protein with the new SO-I oats containing lower EDDM (638 g/kg of DM) and higher EDCP (103 g/kg of DM); (3) significant differences in nutrient supply with highest truly absorbed rumen undegraded protein (ARUP, 23 g/kg of DM) and total metabolizable protein supply (MP, 81 g/kg of DM) from the new SO-I oats; and (4) significant differences in structural makeup in terms of protein amide I in the endosperm region (with amide I peak height from 0.13 to 0.22 IR absorbance unit) and cellulosic compounds to carbohydrate ratio in the pericarp region (ratio from 0.02 to 0.06). The results suggest that with the SRFTIRM technique, the structural makeup differences between the new genotype oats (SO-I) and two conventional oats (Dancer and Derby) could be revealed.

  18. Structural makeup, biopolymer conformation, and biodegradation characteristics of a newly developed super genotype of oats (CDC SO-I versus conventional varieties): a novel approach.

    Science.gov (United States)

    Damiran, Daalkhaijav; Yu, Peiqiang

    2010-02-24

    Recently, a new "super" genotype of oats (CDC SO-I or SO-I) has been developed. The objectives of this study were to determine structural makeup (features) of oat grain in endosperm and pericarp regions and to reveal and identify differences in protein amide I and II and carbohydrate structural makeup (conformation) between SO-I and two conventional oats (CDC Dancer and Derby) grown in western Canada in 2006, using advanced synchrotron radiation based Fourier transform infrared microspectroscopy (SRFTIRM). The SRFTIRM experiments were conducted at National Synchrotron Light Sources, Brookhaven National Laboratory (NSLS, BNL, U.S. Department of Energy). From the results, it was observed that comparison between the new genotype oats and conventional oats showed (1) differences in basic chemical and protein subfraction profiles and energy values with the new SO-I oats containing lower lignin (21 g/kg of DM) and higher soluble crude protein (530 g/kg CP), crude fat (59 g/kg of DM), and energy values (TDN, 820 g/kg of DM; NE(L3x), 7.8 MJ/kg of DM); (2) significant differences in rumen biodegradation kinetics of dry matter, starch, and protein with the new SO-I oats containing lower EDDM (638 g/kg of DM) and higher EDCP (103 g/kg of DM); (3) significant differences in nutrient supply with highest truly absorbed rumen undegraded protein (ARUP, 23 g/kg of DM) and total metabolizable protein supply (MP, 81 g/kg of DM) from the new SO-I oats; and (4) significant differences in structural makeup in terms of protein amide I in the endosperm region (with amide I peak height from 0.13 to 0.22 IR absorbance unit) and cellulosic compounds to carbohydrate ratio in the pericarp region (ratio from 0.02 to 0.06). The results suggest that with the SRFTIRM technique, the structural makeup differences between the new genotype oats (SO-I) and two conventional oats (Dancer and Derby) could be revealed.

  19. Le tourisme gay : aller ailleurs pour être soi-même ?

    Directory of Open Access Journals (Sweden)

    Emmanuel Jaurand

    2010-02-01

    Full Text Available L’orientation dominante des études sur le tourisme, longtemps marquées par l’importance de la dimension économique et par un désintérêt pour les questions touchant au corps, au sexe ou au genre, explique le silence autour du tourisme gay (qui n’est pas le tourisme des gays jusqu’aux années 1990. Pourtant, ce tourisme identitaire existe depuis longtemps et sa visibilité se développe, surtout dans les pays développés occidentaux. La métaphore du voyage et la recherche du paradis (sexuel perdu sont au cœur de l’identité homosexuelle depuis le 19 e siècle. Le tourisme gay se caractérise par des structures (tour-opérateurs, hébergements, croisières… et des destinations spécifiques. Pour les gays il s’agit, dans l’espace-temps des vacances, propice au relâchement et à la recréation de soi, de fuir un monde structuré par le système hétérosexiste et de rejoindre les autres (gays. La recherche de la rencontre du semblable et la sexualisation assumée du tourisme gay, à travers la libération et la dénudation des corps, participent d’une véritable quête pour valider son identité de gay. Elles font que les destinations préférées par les gays sont les stations balnéaires et les grandes villes : elles sont en effet dotées d’espaces publics, d’équipements commerciaux et de formes d’hébergement fermées favorables aux interactions et à la réalisation d’une éphémère « communauté gay ». The mainstream orientation of tourism studies, focused on the sole economic dimension for a long time, without any interest for questions about the body, sex or gender, explains the silence surrounding gay tourism (which is not the tourism of gay men since the 1990s. However, this identity tourism has existed for a long time and its visibility is growing, especially in Western developed countries. The metaphor of the journey and the search for a (sexual paradise lost have been at the core of the

  20. CMOS Compatible SOI MESFETs for Radiation Hardened DC-to-DC Converters, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We have developed a novel metal-semiconductor field-effect-transistor (MESFET) technology suitable for extreme environment electronics. The MESFET technology is...

  1. New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

    Science.gov (United States)

    Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

    2018-06-01

    This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

  2. Food security among individuals experiencing homelessness and mental illness in the At Home/Chez Soi Trial.

    Science.gov (United States)

    O'Campo, Patricia; Hwang, Stephen W; Gozdzik, Agnes; Schuler, Andrée; Kaufman-Shriqui, Vered; Poremski, Daniel; Lazgare, Luis Ivan Palma; Distasio, Jino; Belbraouet, Slimane; Addorisio, Sindi

    2017-08-01

    Individuals experiencing homelessness are particularly vulnerable to food insecurity. The At Home/Chez Soi study provides a unique opportunity to first examine baseline levels of food security among homeless individuals with mental illness and second to evaluate the effect of a Housing First (HF) intervention on food security in this population. At Home/Chez Soi was a 2-year randomized controlled trial comparing the effectiveness of HF compared with usual care among homeless adults with mental illness, stratified by level of need for mental health services (high or moderate). Logistic regressions tested baseline associations between food security (US Food Security Survey Module), study site, sociodemographic variables, duration of homelessness, alcohol/substance use, physical health and service utilization. Negative binomial regression determined the impact of the HF intervention on achieving levels of high or marginal food security over an 18-month follow-up period (6 to 24 months). Community settings at five Canadian sites (Moncton, Montreal, Toronto, Winnipeg and Vancouver). Homeless adults with mental illness (n 2148). Approximately 41 % of our sample reported high or marginal food security at baseline, but this figure varied with gender, age, mental health issues and substance use problems. High need participants who received HF were more likely to achieve marginal or high food security than those receiving usual care, but only at the Toronto and Moncton sites. Our large multi-site study demonstrated low levels of food security among homeless experiencing mental illness. HF showed promise for improving food security among participants with high levels of need for mental health services, with notable site differences.

  3. Characterization of dielectric materials in thin layers for the development of S.O.I. (Silicon on Insulator) substrates

    International Nuclear Information System (INIS)

    Gruber, Olivier

    1999-01-01

    This thesis deals with the characterization of oxide layer placed inside S.O.I. substrates and submitted to irradiation. This type of material is used for the development of hardened electronic components, that is to say components able to be used in a radiative environment. The irradiation induces charges (electrons or holes) in the recovered oxide. A part of these charges is trapped which leads to changes of the characteristics of the electronic components made on these substrates. The main topic of this study is the characterization of trapping properties of recovered oxides and more particularly of 'Unibond' material carried out with a new fabrication process: the 'smart-cut' process. This work is divided into three parts: - study with one carrier: this case is limited to low radiation doses where is only observed holes trapping. The evolution of the physical and chemical properties of the 'Unibond' material recovered oxide has been revealed, this evolution being due to the fabrication process. - Study with two carriers: in this case, there is trapping of holes and electrons. This type of trapping is observed in the case of strong radiation doses. A new type of electrons traps has been identified with the 'Unibond' material oxide. The transport and the trapping of holes and electrons have been studied in the case of transient phenomena created by short radiative pulses. This study has been carried out using a new measurement method. - Study with three carriers: here are added to holes and electrons the protons introduced in the recovered oxide by the annealing under hydrogen. These protons are movable when they are submitted to the effect of an electric field and they induce a memory effect according to their position in the oxide. These different works show that the 'Unibond' material is a very good solution for the future development of S.O.I. (author) [fr

  4. Crossing simple resonances

    International Nuclear Information System (INIS)

    Collins, T.

    1985-08-01

    A simple criterion governs the beam distortion and/or loss of protons on a fast resonance crossing. Results from numerical integrations are illustrated for simple sextupole, octupole, and 10-pole resonances

  5. Crossing simple resonances

    Energy Technology Data Exchange (ETDEWEB)

    Collins, T.

    1985-08-01

    A simple criterion governs the beam distortion and/or loss of protons on a fast resonance crossing. Results from numerical integrations are illustrated for simple sextupole, octupole, and 10-pole resonances.

  6. Simple sorting algorithm test based on CUDA

    OpenAIRE

    Meng, Hongyu; Guo, Fangjin

    2015-01-01

    With the development of computing technology, CUDA has become a very important tool. In computer programming, sorting algorithm is widely used. There are many simple sorting algorithms such as enumeration sort, bubble sort and merge sort. In this paper, we test some simple sorting algorithm based on CUDA and draw some useful conclusions.

  7. Optimization of Nonlinear Figure-of-Merits of Integrated Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Jørgensen, Ivan Harald Holger; Knott, Arnold

    2016-01-01

    State-of-the-art power semiconductor industry uses figure-of-merits (FOMs) for technology-to-technology and/or device-to-device comparisons. However, the existing FOMs are fundamentally nonlinear due to the nonlinearities of the parameters such as the gate charge and the output charge versus...

  8. Technology.

    Science.gov (United States)

    Online-Offline, 1998

    1998-01-01

    Focuses on technology, on advances in such areas as aeronautics, electronics, physics, the space sciences, as well as computers and the attendant progress in medicine, robotics, and artificial intelligence. Describes educational resources for elementary and middle school students, including Web sites, CD-ROMs and software, videotapes, books,…

  9. On-chip grating coupler array on the SOI platform for fan-in/fan-out of multi-core fibers with low insertion loss and crosstalk

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ye, Feihong; Peucheret, Christophe

    2014-01-01

    We design and fabricate a compact multi-core fiber fan-in/fan-out using a fully-etched grating coupler array on the SOI platform. Lowest coupling loss of 6.8 dB with 3 dB bandwidth of 48 nm and crosstalk lower than ×32 dB are demonstrated.......We design and fabricate a compact multi-core fiber fan-in/fan-out using a fully-etched grating coupler array on the SOI platform. Lowest coupling loss of 6.8 dB with 3 dB bandwidth of 48 nm and crosstalk lower than ×32 dB are demonstrated....

  10. Report on achievements in fiscal 1998. Development on an immediately effective and innovative energy and environment technology (Research and development of an information terminal LSI requiring very low power consumption); 1998 nendo sokkoteki kakushinteki energy kankyo gijutsu kaihatsu seika hokokusho. Gokuteidenryoku joho tanmatsuyo LSI no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-09-01

    It is intended that the technology for SOI expected of consuming very small power and operating at high speed be realized as an information terminal LSI for the coming 21st century. Therefore, research and development is made on the fundamental technology for LSI which operates in CMOS devices at high speed even with as very low voltage as about 0.5V by applying the optimized digital and analog circuit technology. Specifically, the aim is placed on enhancement of drive capability of transistors over that in the present devices, reduction of load capacity, and a very thin film complete depletion type SOI device that can be most expected of reduction of area as the main subjects. It is also intended to establish a method to realize very low power consuming LSI by using a CMOS circuit (a multi threshold value type CMOS circuit) that uses transistors with different threshold voltages and is optimized for the above SOI device. The achievements in this fiscal year include: a prototype 256kbSRAM was fabricated by using different design rules and wafer sizes, and the performance evaluation thereon was obtained; investigations were carried out on selection of SOI models for circuit simulation and on a high accuracy complete depletion type SOI models; and design criteria required for LSI design were put in order for comprehensive trial fabrication. (NEDO)

  11. Exploring the Impact of Fuel Data Acquisition Technology on the USMC Expeditionary Energy Command and Control System

    Science.gov (United States)

    2016-09-01

    CA: Sage Publications, Inc. Tulusan, J., Soi, L., Paefgen, J., Brogle, M., & Staake, T. (2011). Eco -efficient feedback technologies : Which eco ...IMPACT OF FUEL DATA ACQUISITION TECHNOLOGY ON THE USMC EXPEDITIONARY ENERGY COMMAND AND CONTROL SYSTEM by Jeremy F. Thomas September 2016...DATE September 2016 3. REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE EXPLORING THE IMPACT OF FUEL DATA ACQUISITION TECHNOLOGY

  12. Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

    International Nuclear Information System (INIS)

    Cheng Xinli; Chen Zhijun; Wang Yongjin; Jin Bo; Zhang Feng; Zou Shichang

    2005-01-01

    SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI

  13. A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

    Directory of Open Access Journals (Sweden)

    Saeid Marjani

    2016-09-01

    Full Text Available In this paper, a silicon–on–insulator (SOI p–n–p–n tunneling field–effect transistor (TFET with a silicon doped hafnium oxide (Si:HfO2 ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3 and strontium bismuth tantalate (SrBi2Ta2O9 provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

  14. Technology

    Directory of Open Access Journals (Sweden)

    Xu Jing

    2016-01-01

    Full Text Available The traditional answer card reading method using OMR (Optical Mark Reader, most commonly, OMR special card special use, less versatile, high cost, aiming at the existing problems proposed a method based on pattern recognition of the answer card identification method. Using the method based on Line Segment Detector to detect the tilt of the image, the existence of tilt image rotation correction, and eventually achieve positioning and detection of answers to the answer sheet .Pattern recognition technology for automatic reading, high accuracy, detect faster

  15. Novel Applications of a Thermally Tunable Bistable Buckling Silicon-on-Insulator (SOI) Microfabricated Membrane

    Science.gov (United States)

    2015-09-17

    sensor and disposable medical blood pressure sensor, which both hit the market in 1982 [2]. Since then, MEMS technology has undergone rapid growth and...Available: http: //digitalpicture.com.au/climate-change-slowing-trains/ 49. O. Tabata , K. Kawahata, S. Sugiyama, and I. Igarashi, “Mechanical property

  16. Photographie et représentation de soi dans W ou le Souvenir d’enfance de Georges Perec

    Directory of Open Access Journals (Sweden)

    Siriki Ouattara

    2014-04-01

    Full Text Available W ou le souvenir d’enfance convoque ouvertement en son sein des éléments paralittéraires comme la photographie qui le déconstruit. Le désir de Georges Perec de reconstituer ou de reconstruire son histoire est si ardent qu’il lui a consacré ce roman particulier. Dans cette œuvre autobiographique atypique, l’auteur fait appel à diverses techniques de représentation de soi, la photographie. Cette dernière est un élément nouveau en littérature (même s´elle y est prise en compte depuis le dix-neuvième siècle qui redéfinit nombre d´habitudes littéraires. Ainsi, elle occasionne un renouvellement de l´écriture à travers l´institution de nouveaux rapports qui, tout en changeant les vieux rôles narratifs, invitent à dire autrement, voire à raconter différemment. La photographie offre alors l´occasion d´expérimenter une nouvelle discursivité de la représentation.

  17. Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs

    Directory of Open Access Journals (Sweden)

    A. Karsenty

    2013-01-01

    Full Text Available Ultrathin body (UTB and nanoscale body (NSB SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46 nm and lower than 5 nm, respectively, were fabricated using a selective “gate-recessed” process on the same silicon wafer. Their current-voltage characteristics measured at room temperature were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a huge series resistance and found that the last one seems more coherent. Then the electrical characteristics of the NSB can be analytically derived by integrating a gate voltage-dependent drain source series resistance. In this paper, the influence of the channel thickness on the series resistance is reported for the first time. This influence is integrated to the analytical model in order to describe the trends of the saturation current with the channel thickness. This modeling approach may be useful to interpret anomalous electrical behavior of other nanodevices in which series resistance and/or mobility degradation is of a great concern.

  18. Engineered SOI slot waveguide ring resonator V-shape resonance combs for refraction index sensing up to 1300nm/RIU (Conference Presentation)

    Science.gov (United States)

    Zhang, Weiwei; Serna, Samuel; Le Roux, Xavier; Vivien, Laurent; Cassan, Eric

    2016-05-01

    Bio-detection based on CMOS technology boosts the miniaturization of detection systems and the success on highly efficient, robust, accurate, and low coast Lab-on-Chip detection schemes. Such on chip detection technologies have covered healthy related harmful gases, bio-chemical analytes, genetic micro RNA, etc. Their monitoring accuracy is mainly qualified in terms of sensitivity and limit of the detection (LOD) of the detection system. In this context, recently developed silicon on insulator (SOI) optical devices have displayed highly performant detection abilities that LOD could go beyond 10-8RIU and sensitivity could exceeds 103nm/RIU. The SOI integrated optical sensing devices include strip/slotted waveguide consisting in structures like Mach-Zehnder interferometers (MZI), ring resonators (RR), nano cavities, etc. Typically, hollow core RR and nano-cavities could exhibit higher sensitivity due to their optical mode confinement properties with a partial localization of the electric field in low index sensing regions than devices based on evanescent field tails outside of the optical cores. Furthermore, they also provide larger sensing areas for surface functionalization to reach higher sensitivities and lower LODs. The state of art of hollow core devices, either based on Bragg gratings formed from a slot waveguide cavity or photonic crystal slot cavities, show sensitivities (S) up to 400nm/RIU and Figure of Merit (FOM) around 3,000 in water environment, FOM being defined as the inverse of LOD and precisely as FOM=SQ/λ, with λ the resonance wavelength and Q the quality factor of the considered resonator. Such high achieved FOMs in nano cavities are mainly due to their large Q factors around 15,000. While for mostly used RR, which do not require particular design strategies, relatively low Q factors around 1800 in water are met and moderate sensitivities about 300nm/RIU are found. In this work, we present here a novel slot ring resonator design to make

  19. Advanced Microelectronics Technologies for Future Small Satellite Systems

    Science.gov (United States)

    Alkalai, Leon

    1999-01-01

    Future small satellite systems for both Earth observation as well as deep-space exploration are greatly enabled by the technological advances in deep sub-micron microelectronics technologies. Whereas these technological advances are being fueled by the commercial (non-space) industries, more recently there has been an exciting new synergism evolving between the two otherwise disjointed markets. In other words, both the commercial and space industries are enabled by advances in low-power, highly integrated, miniaturized (low-volume), lightweight, and reliable real-time embedded systems. Recent announcements by commercial semiconductor manufacturers to introduce Silicon On Insulator (SOI) technology into their commercial product lines is driven by the need for high-performance low-power integrated devices. Moreover, SOI has been the technology of choice for many space semiconductor manufacturers where radiation requirements are critical. This technology has inherent radiation latch-up immunity built into the process, which makes it very attractive to space applications. In this paper, we describe the advanced microelectronics and avionics technologies under development by NASA's Deep Space Systems Technology Program (also known as X2000). These technologies are of significant benefit to both the commercial satellite as well as the deep-space and Earth orbiting science missions. Such a synergistic technology roadmap may truly enable quick turn-around, low-cost, and highly capable small satellite systems for both Earth observation as well as deep-space missions.

  20. Photonic Hilbert transformers based on laterally apodized integrated waveguide Bragg gratings on a SOI wafer.

    Science.gov (United States)

    Bazargani, Hamed Pishvai; Burla, Maurizio; Chrostowski, Lukas; Azaña, José

    2016-11-01

    We experimentally demonstrate high-performance integer and fractional-order photonic Hilbert transformers based on laterally apodized Bragg gratings in a silicon-on-insulator technology platform. The sub-millimeter-long gratings have been fabricated using single-etch electron beam lithography, and the resulting HT devices offer operation bandwidths approaching the THz range, with time-bandwidth products between 10 and 20.

  1. Three-dimensional simulations in optimal performance trial between two types of Hall sensors fabrication technologies

    Energy Technology Data Exchange (ETDEWEB)

    Paun, Maria-Alexandra, E-mail: map65@cam.ac.uk

    2015-10-01

    The main objective of the present work is to make a comparison between Hall devices integrated in regular bulk and Silicon-on-Insulator (SOI) CMOS technology. A three-dimensional model based on numerical estimation is provided for a particular XL Hall structure in two different technologies (the first one is XFAB XH 0.35 µm regular bulk CMOS and the second one is XFAB SOI XI10 1 µm non-fully depleted). In assessing the performance of the Hall Effect sensors included in the comparison, both three-dimensional physical simulations and measurements results will be used. In order to discriminate which category of sensors has the highest performance, their main characteristic parameters, including input resistance, Hall voltage, absolute sensitivity and their temperature drift, will be extracted and compared. Electrostatic potential and current density distribution are important aspects that are also investigated. The particular technology offering the highest sensor performance is identified. - Highlights: • A comparison between Hall devices integrated in regular bulk and SOI CMOS technologies is made. • A three-dimensional model for the XL Hall structure, in the two technologies, is provided. • The main characteristic parameters and the temperature drift are investigated. • The sensors performance is evaluated using 3D physical simulations and measurements data.

  2. Simple WZW currents

    International Nuclear Information System (INIS)

    Fuchs, J.

    1990-08-01

    A complete classification of simple currents of WZW theory is obtained. The proof is based on an analysis of the quantum dimensions of the primary fields. Simple currents are precisely the primaries with unit quantum dimension; for WZW theories explicit formulae for the quantum dimensions can be derived so that an identification of the fields with unit quantum dimension is possible. (author). 19 refs.; 2 tabs

  3. Investigation of Wide-FSR SOI Optical Filters Operating in C and L Bands

    Directory of Open Access Journals (Sweden)

    V. M. N. Passaro

    2012-06-01

    Full Text Available In this paper we present the investigation of optical filters based on triple ring resonator architectures in silicon-on-insulator technology. The generalized approach based on Mason’s rule and delay line signal processing has been implemented for modeling optical filters in Z-domain. A numerical investigation based on the coefficient map has been adopted for designing optical add-drop multiplexers with wide free spectral ranges, as large as 12 THz (~ 96 nm. Low crosstalk, of the order of -20 dB, has been numerically demonstrated in overall transmittances of optimized filters.

  4. Piezoresistive silicon nanowire resonators as embedded building blocks in thick SOI

    Science.gov (United States)

    Nasr Esfahani, Mohammad; Kilinc, Yasin; Çagatay Karakan, M.; Orhan, Ezgi; Hanay, M. Selim; Leblebici, Yusuf; Erdem Alaca, B.

    2018-04-01

    The use of silicon nanowire resonators in nanoelectromechanical systems for new-generation sensing and communication devices faces integration challenges with higher-order structures. Monolithic and deterministic integration of such nanowires with the surrounding microscale architecture within the same thick crystal is a critical aspect for the improvement of throughput, reliability and device functionality. A monolithic and IC-compatible technology based on a tuned combination of etching and protection processes was recently introduced yielding silicon nanowires within a 10 μ m-thick device layer. Motivated by its success, the implications of the technology regarding the electromechanical resonance are studied within a particular setting, where the resonator is co-fabricated with all terminals and tuning electrodes. Frequency response is measured via piezoresistive readout with frequency down-mixing. Measurements indicate mechanical resonance with frequencies as high as 100 MHz exhibiting a Lorentzian behavior with proper transition to nonlinearity, while Allan deviation on the order of 3-8 ppm is achieved. Enabling the fabrication of silicon nanowires in thick silicon crystals using conventional semiconductor manufacturing, the present study thus demonstrates an alternative pathway to bottom-up and thin silicon-on-insulator approaches for silicon nanowire resonators.

  5. Grazing-incident PIXE Analysis Technology

    International Nuclear Information System (INIS)

    Li Hongri; Wang Guangpu; Liang Kun; Yang Ru; Han Dejun

    2009-01-01

    In the article, the grazing incidence technology is first applied to the PIXE (proton induced X-ray emission) analysis. Three pieces of samples were investigated, including the contaminated aluminium substrate, the SIMOX (separated by oxygen implantation) SOI (Silicon on Insulator) sample and the silicon wafer implanted with Fe + . The results reveal that the grazing-incident proton can improve the sensitivity of PIXE in trace analysis, especially for samples contaminated on surface. With the penetration depth of the proton bean decreased, the ratio of the peak area to the detection limit raised observably and the sensitivity near the sample surface increased. (authors)

  6. Strategy as simple rules.

    Science.gov (United States)

    Eisenhardt, K M; Sull, D N

    2001-01-01

    The success of Yahoo!, eBay, Enron, and other companies that have become adept at morphing to meet the demands of changing markets can't be explained using traditional thinking about competitive strategy. These companies have succeeded by pursuing constantly evolving strategies in market spaces that were considered unattractive according to traditional measures. In this article--the third in an HBR series by Kathleen Eisenhardt and Donald Sull on strategy in the new economy--the authors ask, what are the sources of competitive advantage in high-velocity markets? The secret, they say, is strategy as simple rules. The companies know that the greatest opportunities for competitive advantage lie in market confusion, but they recognize the need for a few crucial strategic processes and a few simple rules. In traditional strategy, advantage comes from exploiting resources or stable market positions. In strategy as simple rules, advantage comes from successfully seizing fleeting opportunities. Key strategic processes, such as product innovation, partnering, or spinout creation, place the company where the flow of opportunities is greatest. Simple rules then provide the guidelines within which managers can pursue such opportunities. Simple rules, which grow out of experience, fall into five broad categories: how- to rules, boundary conditions, priority rules, timing rules, and exit rules. Companies with simple-rules strategies must follow the rules religiously and avoid the temptation to change them too frequently. A consistent strategy helps managers sort through opportunities and gain short-term advantage by exploiting the attractive ones. In stable markets, managers rely on complicated strategies built on detailed predictions of the future. But when business is complicated, strategy should be simple.

  7. A National Partnership-Based Summer Learning Initiative to Engage Underrepresented Students with Science, Technology, Engineering and Mathematics

    Science.gov (United States)

    Melvin, Leland

    2010-01-01

    In response to the White House Educate to Innovate campaign, NASA developed a new science, technology, engineering, and mathematics (STEM) education program for non-traditional audiences that also focused on public-private partnerships and nationwide participation. NASA recognized that summer break is an often overlooked but opportune time to engage youth in STEM experiences, and elevated its ongoing commitment to the cultivation of diversity. The Summer of Innovation (SoI) is the resulting initiative that uses NASA's unique missions and resources to boost summer learning, particularly for students who are underrepresented, underserved and underperforming in STEM. The SoI pilot, launched in June 2010, is a multi-faceted effort designed to improve STEM teaching and learning through partnership, multi-week summer learning programs, special events, a national concluding event, and teacher development. The SoI pilot features strategic infusion of NASA content and educational resource materials, sustainability through STEM Learning Communities, and assessments of effectiveness of SoI interventions with other pilot efforts. This paper examines the inception and development of the Summer of Innovation pilot project, including achievements and effectiveness, as well as lessons learned for future efforts.

  8. Invention de soi et compétences à l’ère des réseaux sociaux

    Directory of Open Access Journals (Sweden)

    Daniel Apollon

    2011-06-01

    Full Text Available Les réseaux sociaux en ligne encouragent de nouvelles approches de la compétence centrées sur la construction biographique de l’individu et l’invention de soi. Ce nouvel art de faire des « produsagers », répond au besoin d’inventer une réponse individuelle et collective au sentiment aliénant de vacuité des sociétés post-industrielles et post-traditionnelles. Combinant opposition et soumission aux éléments structurants et aliénants de cette modernité tardive, ces produsagers réactualisent diverses ruses, tactiques et schèmes immémoriaux déjà explorés par divers auteurs avant Internet. Sur cette toile de fond, l’auteur propose une réinterprétation plus large de la notion de compétence.Social media practices encourage new approaches and visions of competence focusing on the construction of individual biography and the "invention of oneself". The new "artful skills" of "produsers" address the need to invent individual and collective responses to the sense of alienating emptiness pervading postindustrial and posttraditional societies. Combining and submission and opposition to both structuring and alienating aspects of late modernity, these produsagers actualize various tricks, tactics and immemorial schemes already mapped by various authors before the Internet. On this backdrop the author proposes a broader reinterpretation of the concept of competence.

  9. Simple Finite Sums

    KAUST Repository

    Alabdulmohsin, Ibrahim M.

    2018-03-07

    We will begin our treatment of summability calculus by analyzing what will be referred to, throughout this book, as simple finite sums. Even though the results of this chapter are particular cases of the more general results presented in later chapters, they are important to start with for a few reasons. First, this chapter serves as an excellent introduction to what summability calculus can markedly accomplish. Second, simple finite sums are encountered more often and, hence, they deserve special treatment. Third, the results presented in this chapter for simple finite sums will, themselves, be used as building blocks for deriving the most general results in subsequent chapters. Among others, we establish that fractional finite sums are well-defined mathematical objects and show how various identities related to the Euler constant as well as the Riemann zeta function can actually be derived in an elementary manner using fractional finite sums.

  10. Simple Finite Sums

    KAUST Repository

    Alabdulmohsin, Ibrahim M.

    2018-01-01

    We will begin our treatment of summability calculus by analyzing what will be referred to, throughout this book, as simple finite sums. Even though the results of this chapter are particular cases of the more general results presented in later chapters, they are important to start with for a few reasons. First, this chapter serves as an excellent introduction to what summability calculus can markedly accomplish. Second, simple finite sums are encountered more often and, hence, they deserve special treatment. Third, the results presented in this chapter for simple finite sums will, themselves, be used as building blocks for deriving the most general results in subsequent chapters. Among others, we establish that fractional finite sums are well-defined mathematical objects and show how various identities related to the Euler constant as well as the Riemann zeta function can actually be derived in an elementary manner using fractional finite sums.

  11. Excel 2010 Made Simple

    CERN Document Server

    Katz, Abbott

    2011-01-01

    Get the most out of Excel 2010 with Excel 2010 Made Simple - learn the key features, understand what's new, and utilize dozens of time-saving tips and tricks to get your job done. Over 500 screen visuals and clear-cut instructions guide you through the features of Excel 2010, from formulas and charts to navigating around a worksheet and understanding Visual Basic for Applications (VBA) and macros. Excel 2010 Made Simple takes a practical and highly effective approach to using Excel 2010, showing you the best way to complete your most common spreadsheet tasks. You'll learn how to input, format,

  12. Droids Made Simple

    CERN Document Server

    Mazo, Gary

    2011-01-01

    If you have a Droid series smartphone - Droid, Droid X, Droid 2, or Droid 2 Global - and are eager to get the most out of your device, Droids Made Simple is perfect for you. Authors Martin Trautschold, Gary Mazo and Marziah Karch guide you through all of the features, tips, and tricks using their proven combination of clear instructions and detailed visuals. With hundreds of annotated screenshots and step-by-step directions, Droids Made Simple will transform you into a Droid expert, improving your productivity, and most importantly, helping you take advantage of all of the cool features that c

  13. Clusters in simple fluids

    International Nuclear Information System (INIS)

    Sator, N.

    2003-01-01

    This article concerns the correspondence between thermodynamics and the morphology of simple fluids in terms of clusters. Definitions of clusters providing a geometric interpretation of the liquid-gas phase transition are reviewed with an eye to establishing their physical relevance. The author emphasizes their main features and basic hypotheses, and shows how these definitions lead to a recent approach based on self-bound clusters. Although theoretical, this tutorial review is also addressed to readers interested in experimental aspects of clustering in simple fluids

  14. Association "Les Simples"

    OpenAIRE

    Thouzery, Michel

    2014-01-01

    Fondée par les producteurs du Syndicat Inter-Massifs pour la Production et l’Économie des Simples (S.I.M.P.L.E.S), l’association base son action sur la recherche et le maintien d’une production de qualité (herboristerie et préparations à base de plantes) qui prend en compte le respect de l’environnement et la pérennité des petits producteurs en zone de montagne. Actions de formation Stages de découverte de la flore médicinale sauvage, Stages de culture et transformation des plantes médicinale...

  15. Preliminary Investigation of an SOI-based Arrayed Waveguide Grating Demodulation Integration Microsystem

    Science.gov (United States)

    Li, Hongqiang; Zhou, Wenqian; Liu, Yu; Dong, Xiaye; Zhang, Cheng; Miao, Changyun; Zhang, Meiling; Li, Enbang; Tang, Chunxiao

    2014-05-01

    An arrayed waveguide grating (AWG) demodulation integration microsystem is investigated in this study. The system consists of a C-band on-chip LED, a 2 × 2 silicon nanowire-based coupler, a fiber Bragg grating (FBG) array, a 1 × 8 AWG, and a photoelectric detector array. The coupler and AWG are made from silicon-on-insulator wafers using electron beam exposure and response-coupled plasma technology. Experimental results show that the excess loss in the MMI coupler with a footprint of 6 × 100 μm2 is 0.5423 dB. The 1 × 8 AWG with a footprint of 267 × 381 μm2 and a waveguide width of 0.4 μm exhibits a central channel loss of -3.18 dB, insertion loss non-uniformity of -1.34 dB, and crosstalk level of -23.1 dB. The entire system is preliminarily tested. Wavelength measurement precision is observed to reach 0.001 nm. The wavelength sensitivity of each FBG is between 0.04 and 0.06 nm/dB.

  16. Influence of Bipolar Pulse Poling Technique for Piezoelectric Vibration Energy Harvesters using Pb(Zr,Ti)O3 Films on 200 mm SOI Wafers

    International Nuclear Information System (INIS)

    Moriwaki, N; Fujimoto, K; Suzuki, K; Kobayashi, T; Itoh, T; Maeda, R; Suzuki, Y; Makimoto, N

    2013-01-01

    Piezoelectric vibration energy harvester arrays using Pb(Zr,Ti)O 3 thin films on 200 mm SOI wafers were fabricated. In-plane distribution of influence of bipolar pulse poling technique on direct current (DC) power output from the harvesters was investigated. The results indicate that combination poling treatment of DC and bipolar pulse poling increases a piezoelectric property and reduces a dielectric constant. It means that this poling technique improves the figure of merit of sensors and harvesters. Maximum DC power from a harvester treated by DC poling after bipolar pulse poling is about five times larger than a one treated by DC poling only

  17. Simple Driving Techniques

    DEFF Research Database (Denmark)

    Rosendahl, Mads

    2002-01-01

    -like language. Our aim is to extract a simple notion of driving and show that even in this tamed form it has much of the power of more general notions of driving. Our driving technique may be used to simplify functional programs which use function composition and will often be able to remove intermediate data...

  18. A Simple Tiltmeter

    Science.gov (United States)

    Dix, M. G.; Harrison, D. R.; Edwards, T. M.

    1982-01-01

    Bubble vial with external aluminum-foil electrodes is sensing element for simple indicating tiltmeter. To measure bubble displacement, bridge circuit detects difference in capacitance between two sensing electrodes and reference electrode. Tiltmeter was developed for experiment on forecasting seismic events by changes in Earth's magnetic field.

  19. A Simple Hydrogen Electrode

    Science.gov (United States)

    Eggen, Per-Odd

    2009-01-01

    This article describes the construction of an inexpensive, robust, and simple hydrogen electrode, as well as the use of this electrode to measure "standard" potentials. In the experiment described here the students can measure the reduction potentials of metal-metal ion pairs directly, without using a secondary reference electrode. Measurements…

  20. Structure of simple liquids

    International Nuclear Information System (INIS)

    Blain, J.F.

    1969-01-01

    The results obtained by application to argon and sodium of the two important methods of studying the structure of liquids: scattering of X-rays and neutrons, are presented on one hand. On the other hand the principal models employed for reconstituting the structure of simple liquids are exposed: mathematical models, lattice models and their derived models, experimental models. (author) [fr

  1. Simple mathematical fireworks

    International Nuclear Information System (INIS)

    De Luca, R; Faella, O

    2014-01-01

    Mathematical fireworks are reproduced in two dimensions by means of simple notions in kinematics and Newtonian mechanics. Extension of the analysis in three dimensions is proposed and the geometric figures the falling tiny particles make on the ground after explosion are determined. (paper)

  2. simple sequence repeat (SSR)

    African Journals Online (AJOL)

    In the present study, 78 mapped simple sequence repeat (SSR) markers representing 11 linkage groups of adzuki bean were evaluated for transferability to mungbean and related Vigna spp. 41 markers amplified characteristic bands in at least one Vigna species. The transferability percentage across the genotypes ranged ...

  3. A Simple Wave Driver

    Science.gov (United States)

    Temiz, Burak Kagan; Yavuz, Ahmet

    2015-01-01

    This study was done to develop a simple and inexpensive wave driver that can be used in experiments on string waves. The wave driver was made using a battery-operated toy car, and the apparatus can be used to produce string waves at a fixed frequency. The working principle of the apparatus is as follows: shortly after the car is turned on, the…

  4. Six-beam homodyne laser Doppler vibrometry based on silicon photonics technology.

    Science.gov (United States)

    Li, Yanlu; Zhu, Jinghao; Duperron, Matthieu; O'Brien, Peter; Schüler, Ralf; Aasmul, Soren; de Melis, Mirko; Kersemans, Mathias; Baets, Roel

    2018-02-05

    This paper describes an integrated six-beam homodyne laser Doppler vibrometry (LDV) system based on a silicon-on-insulator (SOI) full platform technology, with on-chip photo-diodes and phase modulators. Electronics and optics are also implemented around the integrated photonic circuit (PIC) to enable a simultaneous six-beam measurement. Measurement of a propagating guided elastic wave in an aluminum plate (speed ≈ 909 m/s @ 61.5 kHz) is demonstrated.

  5. Fully-etched apodized fiber-to-chip grating coupler on the SOI platform with -0.78 dB coupling efficiency using photonic crystals and bonded Al mirror

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Peucheret, Christophe

    2014-01-01

    We design and fabricate an ultra-high coupling efficiency fully-etched apodized grating coupler on the SOI platform using photonic crystals and bonded aluminum mirror. Ultra-high coupling efficiency of -0.78 dB with a 3 dB bandwidth of 74 nm are demonstrated.......We design and fabricate an ultra-high coupling efficiency fully-etched apodized grating coupler on the SOI platform using photonic crystals and bonded aluminum mirror. Ultra-high coupling efficiency of -0.78 dB with a 3 dB bandwidth of 74 nm are demonstrated....

  6. Complexity is simple!

    Science.gov (United States)

    Cottrell, William; Montero, Miguel

    2018-02-01

    In this note we investigate the role of Lloyd's computational bound in holographic complexity. Our goal is to translate the assumptions behind Lloyd's proof into the bulk language. In particular, we discuss the distinction between orthogonalizing and `simple' gates and argue that these notions are useful for diagnosing holographic complexity. We show that large black holes constructed from series circuits necessarily employ simple gates, and thus do not satisfy Lloyd's assumptions. We also estimate the degree of parallel processing required in this case for elementary gates to orthogonalize. Finally, we show that for small black holes at fixed chemical potential, the orthogonalization condition is satisfied near the phase transition, supporting a possible argument for the Weak Gravity Conjecture first advocated in [1].

  7. Unicameral (simple) bone cysts.

    Science.gov (United States)

    Baig, Rafath; Eady, John L

    2006-09-01

    Since their original description by Virchow, simple bone cysts have been studied repeatedly. Although these defects are not true neoplasms, simple bone cysts may create major structural defects of the humerus, femur, and os calcis. They are commonly discovered incidentally when x-rays are taken for other reasons or on presentation due to a pathologic fracture. Various treatment strategies have been employed, but the only reliable predictor of success of any treatment strategy is the age of the patient; those being older than 10 years of age heal their cysts at a higher rate than those under age 10. The goal of management is the formation of a bone that can withstand the stresses of use by the patient without evidence of continued bone destruction as determined by serial radiographic follow-up. The goal is not a normal-appearing x-ray, but a functionally stable bone.

  8. Modern mathematics made simple

    CERN Document Server

    Murphy, Patrick

    1982-01-01

    Modern Mathematics: Made Simple presents topics in modern mathematics, from elementary mathematical logic and switching circuits to multibase arithmetic and finite systems. Sets and relations, vectors and matrices, tesselations, and linear programming are also discussed.Comprised of 12 chapters, this book begins with an introduction to sets and basic operations on sets, as well as solving problems with Venn diagrams. The discussion then turns to elementary mathematical logic, with emphasis on inductive and deductive reasoning; conjunctions and disjunctions; compound statements and conditional

  9. L’empathie comme outil herméneutique du soi: Note sur Paul Ricœur et Heinz Kohut

    Directory of Open Access Journals (Sweden)

    Michel Dupuis

    2011-01-01

    Full Text Available Le bref texte que Paul Ricœur consacre en 1986 à la psychanalyse développée par Heinz Kohut révèle une réinterprétation phénoménologique à la fois du contenu et des fonctions de l'empathie, au total considérée comme un véritable outil à l'œuvre dans l'herméneutique du soi. La vision kohutienne de la constitution du soi et du processus thérapeutique analytique produit une espèce de “dé-sentimentalisation” de l'empathie, en soulignant le rôle crucial du transfert intersubjectif, fort à distance de la théorie (freudienne solipsiste de l'ego.The short text published in 1986 by Paul Ricoeur about Heinz Kohut's psychoanalysis of the self reveals a phenomenological reinterpretation of the content and the functions of empathy, finally considered as an effective tool of the hermeneutics of the self. Kohut's model of constitution of the self and of the therapeutic analytical process produces a kind of “de-sentimentalization” of empathy, pointing to the crucial role of intersubjective transfer, far from a (Freudian solipsistic theory of the ego.

  10. An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET

    Science.gov (United States)

    Saramekala, G. K.; Santra, Abirmoya; Dubey, Sarvesh; Jit, Satyabrata; Tiwari, Pramod Kumar

    2013-08-01

    In this paper, an analytical short-channel threshold voltage model is presented for a dual-metal-gate (DMG) fully depleted recessed source/drain (Re-S/D) SOI MOSFET. For the first time, the advantages of recessed source/drain (Re-S/D) and of dual-metal-gate structure are incorporated simultaneously in a fully depleted SOI MOSFET. The analytical surface potential model at Si-channel/SiO2 interface and Si-channel/buried-oxide (BOX) interface have been developed by solving the 2-D Poisson’s equation in the channel region with appropriate boundary conditions assuming parabolic potential profile in the transverse direction of the channel. Thereupon, a threshold voltage model is derived from the minimum surface potential in the channel. The developed model is analyzed extensively for a variety of device parameters like the oxide and silicon channel thicknesses, thickness of source/drain extension in the BOX, control and screen gate length ratio. The validity of the present 2D analytical model is verified with ATLAS™, a 2D device simulator from SILVACO Inc.

  11. Dimensional analysis made simple

    International Nuclear Information System (INIS)

    Lira, Ignacio

    2013-01-01

    An inductive strategy is proposed for teaching dimensional analysis to second- or third-year students of physics, chemistry, or engineering. In this strategy, Buckingham's theorem is seen as a consequence and not as the starting point. In order to concentrate on the basics, the mathematics is kept as elementary as possible. Simple examples are suggested for classroom demonstrations of the power of the technique and others are put forward for homework or experimentation, but instructors are encouraged to produce examples of their own. (paper)

  12. Applied mathematics made simple

    CERN Document Server

    Murphy, Patrick

    1982-01-01

    Applied Mathematics: Made Simple provides an elementary study of the three main branches of classical applied mathematics: statics, hydrostatics, and dynamics. The book begins with discussion of the concepts of mechanics, parallel forces and rigid bodies, kinematics, motion with uniform acceleration in a straight line, and Newton's law of motion. Separate chapters cover vector algebra and coplanar motion, relative motion, projectiles, friction, and rigid bodies in equilibrium under the action of coplanar forces. The final chapters deal with machines and hydrostatics. The standard and conte

  13. Data processing made simple

    CERN Document Server

    Wooldridge, Susan

    2013-01-01

    Data Processing: Made Simple, Second Edition presents discussions of a number of trends and developments in the world of commercial data processing. The book covers the rapid growth of micro- and mini-computers for both home and office use; word processing and the 'automated office'; the advent of distributed data processing; and the continued growth of database-oriented systems. The text also discusses modern digital computers; fundamental computer concepts; information and data processing requirements of commercial organizations; and the historical perspective of the computer industry. The

  14. ASP made simple

    CERN Document Server

    Deane, Sharon

    2003-01-01

    ASP Made Simple provides a brief introduction to ASP for the person who favours self teaching and/or does not have expensive computing facilities to learn on. The book will demonstrate how the principles of ASP can be learned with an ordinary PC running Personal Web Server, MS Access and a general text editor like Notepad.After working through the material readers should be able to:* Write ASP scripts that can display changing information on a web browser* Request records from a remote database or add records to it* Check user names & passwords and take this knowledge forward, either for their

  15. Theory of simple liquids

    CERN Document Server

    Hansen, Jean-Pierre

    1986-01-01

    This book gives a comprehensive and up-to-date treatment of the theory of ""simple"" liquids. The new second edition has been rearranged and considerably expanded to give a balanced account both of basic theory and of the advances of the past decade. It presents the main ideas of modern liquid state theory in a way that is both pedagogical and self-contained. The book should be accessible to graduate students and research workers, both experimentalists and theorists, who have a good background in elementary mechanics.Key Features* Compares theoretical deductions with experimental r

  16. Probabilistic simple sticker systems

    Science.gov (United States)

    Selvarajoo, Mathuri; Heng, Fong Wan; Sarmin, Nor Haniza; Turaev, Sherzod

    2017-04-01

    A model for DNA computing using the recombination behavior of DNA molecules, known as a sticker system, was introduced by by L. Kari, G. Paun, G. Rozenberg, A. Salomaa, and S. Yu in the paper entitled DNA computing, sticker systems and universality from the journal of Acta Informatica vol. 35, pp. 401-420 in the year 1998. A sticker system uses the Watson-Crick complementary feature of DNA molecules: starting from the incomplete double stranded sequences, and iteratively using sticking operations until a complete double stranded sequence is obtained. It is known that sticker systems with finite sets of axioms and sticker rules generate only regular languages. Hence, different types of restrictions have been considered to increase the computational power of sticker systems. Recently, a variant of restricted sticker systems, called probabilistic sticker systems, has been introduced [4]. In this variant, the probabilities are initially associated with the axioms, and the probability of a generated string is computed by multiplying the probabilities of all occurrences of the initial strings in the computation of the string. Strings for the language are selected according to some probabilistic requirements. In this paper, we study fundamental properties of probabilistic simple sticker systems. We prove that the probabilistic enhancement increases the computational power of simple sticker systems.

  17. Simple stochastic simulation.

    Science.gov (United States)

    Schilstra, Maria J; Martin, Stephen R

    2009-01-01

    Stochastic simulations may be used to describe changes with time of a reaction system in a way that explicitly accounts for the fact that molecules show a significant degree of randomness in their dynamic behavior. The stochastic approach is almost invariably used when small numbers of molecules or molecular assemblies are involved because this randomness leads to significant deviations from the predictions of the conventional deterministic (or continuous) approach to the simulation of biochemical kinetics. Advances in computational methods over the three decades that have elapsed since the publication of Daniel Gillespie's seminal paper in 1977 (J. Phys. Chem. 81, 2340-2361) have allowed researchers to produce highly sophisticated models of complex biological systems. However, these models are frequently highly specific for the particular application and their description often involves mathematical treatments inaccessible to the nonspecialist. For anyone completely new to the field to apply such techniques in their own work might seem at first sight to be a rather intimidating prospect. However, the fundamental principles underlying the approach are in essence rather simple, and the aim of this article is to provide an entry point to the field for a newcomer. It focuses mainly on these general principles, both kinetic and computational, which tend to be not particularly well covered in specialist literature, and shows that interesting information may even be obtained using very simple operations in a conventional spreadsheet.

  18. CMOS MEMS Fabrication Technologies and Devices

    Directory of Open Access Journals (Sweden)

    Hongwei Qu

    2016-01-01

    Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

  19. Beyond Simple Headquarters Configurations

    DEFF Research Database (Denmark)

    Dellestrand, Henrik; Kappen, Philip; Nell, Phillip Christopher

    We investigate “dual headquarters involvement”, i.e. corporate and divisional headquarters’ simultaneous involvement in subsidiaries’ innovation development projects. Analyses draw on 85 innovation projects in 23 multibusiness firms and reveal that cross-divisional innovation importance, i.......e., an innovation that is important for the firm beyond the divisional boundaries, drives dual headquarters involvement in innovation development. Contrary to expectations, on average, a non-significant effect of cross-divisional embeddedness on dual headquarters involvement is found. Yet, both cross......-divisional importance and embeddedness effects are contingent on the overall complexity of the innovation project as signified by the size of the development network. The results lend support for the notion that parenting in complex structures entails complex headquarters structures and that we need to go beyond simple...

  20. Simple relation algebras

    CERN Document Server

    Givant, Steven

    2017-01-01

    This monograph details several different methods for constructing simple relation algebras, many of which are new with this book. By drawing these seemingly different methods together, all are shown to be aspects of one general approach, for which several applications are given. These tools for constructing and analyzing relation algebras are of particular interest to mathematicians working in logic, algebraic logic, or universal algebra, but will also appeal to philosophers and theoretical computer scientists working in fields that use mathematics. The book is written with a broad audience in mind and features a careful, pedagogical approach; an appendix contains the requisite background material in relation algebras. Over 400 exercises provide ample opportunities to engage with the material, making this a monograph equally appropriate for use in a special topics course or for independent study. Readers interested in pursuing an extended background study of relation algebras will find a comprehensive treatme...

  1. A Simple Harmonic Universe

    Energy Technology Data Exchange (ETDEWEB)

    Graham, Peter W.; /Stanford U., ITP; Horn, Bart; Kachru, Shamit; /Stanford U., ITP /SLAC; Rajendran, Surjeet; /Johns Hopkins U. /Stanford U., ITP; Torroba, Gonzalo; /Stanford U., ITP /SLAC

    2011-12-14

    We explore simple but novel bouncing solutions of general relativity that avoid singularities. These solutions require curvature k = +1, and are supported by a negative cosmological term and matter with -1 < w < -1 = 3. In the case of moderate bounces (where the ratio of the maximal scale factor a{sub +} to the minimal scale factor a{sub -} is {Omicron}(1)), the solutions are shown to be classically stable and cycle through an infinite set of bounces. For more extreme cases with large a{sub +} = a{sub -}, the solutions can still oscillate many times before classical instabilities take them out of the regime of validity of our approximations. In this regime, quantum particle production also leads eventually to a departure from the realm of validity of semiclassical general relativity, likely yielding a singular crunch. We briefly discuss possible applications of these models to realistic cosmology.

  2. SIMPLE for industrial radiography

    International Nuclear Information System (INIS)

    Azhar Azmi; Abd Nassir Ibrahim; Siti Madiha Muhammad Amir; Glam Hadzir Patai Mohamad; Saidi Rajab

    2004-01-01

    The first thing industrial radiographers have to do before commencing radiography works is to determine manually the amount of correct exposure that the film need to be exposed in order to obtain the right density. The amount of exposure depends on many variables such as type of radioisotope, type of film, nature of test-object and its orientation, and specific arrangement related to object location and configuration. In many cases radiography works are rejected because of radiographs fail to meet certain reference criteria as defined in the applicable standard. One of the main reasons of radiograph rejection is due to inadequate exposure received by the films. SIMPLE is a software specially developed to facilitate the calculation of gamma-radiography exposure. By using this software and knowing radiographic parameters to be encountered during the work, it is expected that human error will be minimized, thus enhancing the quality and productivity of NDT jobs. (Author)

  3. Molecular genetics made simple

    Directory of Open Access Journals (Sweden)

    Heba Sh. Kassem

    2012-07-01

    Full Text Available Genetics have undoubtedly become an integral part of biomedical science and clinical practice, with important implications in deciphering disease pathogenesis and progression, identifying diagnostic and prognostic markers, as well as designing better targeted treatments. The exponential growth of our understanding of different genetic concepts is paralleled by a growing list of genetic terminology that can easily intimidate the unfamiliar reader. Rendering genetics incomprehensible to the clinician however, defeats the very essence of genetic research: its utilization for combating disease and improving quality of life. Herein we attempt to correct this notion by presenting the basic genetic concepts along with their usefulness in the cardiology clinic. Bringing genetics closer to the clinician will enable its harmonious incorporation into clinical care, thus not only restoring our perception of its simple and elegant nature, but importantly ensuring the maximal benefit for our patients.

  4. Molecular genetics made simple

    Science.gov (United States)

    Kassem, Heba Sh.; Girolami, Francesca; Sanoudou, Despina

    2012-01-01

    Abstract Genetics have undoubtedly become an integral part of biomedical science and clinical practice, with important implications in deciphering disease pathogenesis and progression, identifying diagnostic and prognostic markers, as well as designing better targeted treatments. The exponential growth of our understanding of different genetic concepts is paralleled by a growing list of genetic terminology that can easily intimidate the unfamiliar reader. Rendering genetics incomprehensible to the clinician however, defeats the very essence of genetic research: its utilization for combating disease and improving quality of life. Herein we attempt to correct this notion by presenting the basic genetic concepts along with their usefulness in the cardiology clinic. Bringing genetics closer to the clinician will enable its harmonious incorporation into clinical care, thus not only restoring our perception of its simple and elegant nature, but importantly ensuring the maximal benefit for our patients. PMID:25610837

  5. Determined Initial lead for South Of Isua (SOI) terrain suggests a single homogeneous source for it and possibly other archaean rocks

    Science.gov (United States)

    Tera, F.

    2011-12-01

    A Thorogenic-Uranogenic Lead Isotope Plane (TULIP), which entails plotting 206/208 (or its reverse) vs 207/208 (or its reverse), was applied to the Pb data on South of Isua (SOI) by Kamber et al., (1). When the data on 20 samples of these rocks and feldspars are plotted in pairs (each pair is a rock and its feldspar) on TULIP, they fall on 10 mixing lines that converge on a single spot (Fig. 1). This is the end member initial lead (EMIL). The 206/208 & 207/208 so determined are 0.3675 and 0.43525, respectively. From these values one calculates 207/206 = 1.1843 ± 0.0007, for EMIL. This pattern requires either: A) each pair has a singular kappa, K = 232Th/238U, different from others, or B) a pair's in situ decay Pb was homogenized in recent times. On 204/206 vs 207/206 diagram, the whole rocks of SOI define a 3.776 Ga isochron (2). From this and EMIL's 207/206, one obtains: 206/204 = 10.977, 207/204 = 12.974; and 208/204 = 29.756. This singularity of initial Pb contrasts with a deduced variability by the original authors (1). EMIL's radiogenic *(207/206) = 1.6220, gives a single-stage age = 5.9 Ga, indicating inapplicability of its evolution in one stage. Also, the μ calculated from 238U-206Pb for the single stage is different from that inferred from 235U-207Pb, confirming disqualification of this scenario. Reconciliation of the two decay schemes necessitates assumption of EMIL evolution in a minimum of two stages. Starting at 4.563 Ga, five scenarios were assumed: First stage ends and second starts at 4.55, 4.54, 4.53, 4.52 or 4.51 Ga. Second stages end at 3.776 Ga. The calculated μ1 for the first stage are 106, 59.5, 44.6, 36.3 and 30.9 respectively. For μ2 the change is limited, from 5.45 to 5.28. Only an average calculated K for both stages is possible. For the five outlined scenarios it ranges from 1.118 to 1.111. Earlier, Tera (3) observed that initial Pb of the oldest terrestrial reservoir requires evolution in two stages. There too μ1 >> μ2. Data on

  6. SIMPLE LIFE AND RELIGION

    Directory of Open Access Journals (Sweden)

    Ahmet YILDIRIM

    2014-07-01

    Full Text Available Individuals in terms of the economy in which we live is one of the most important phenomenon of the century. This phenomenon present itself as the only determinant of people's lives by entering almost makes itself felt. The mo st obvious objective needs of the economy by triggering motive is to induce people to consume . Consumer culture pervades all aspects of the situation are people . Therefore, these people have the blessing of culture , beauty and value all in the name of w hatever is consumed. This is way out of the siege of moral and religious values we have is to go back again . Referred by local cultural and religious values, based on today increasingly come to the fore and the Muslim way of life appears to be close to th e plain / lean preferred by many people life has been a way of life. Even the simple life , a way of life in the Western world , a conception of life , a philosophy, a movement as it has become widely accepted. Here in determining the Muslim way of life Pr ophet. Prophet (sa lived the kind of life a very important model, sample, and determining which direction is known. Religious values, which is the carrier of the prophets, sent to the society they have always been examples and models. Because every aspect of human life, his life style and the surrounding area has a feature. We also value his life that he has unknowingly and without learning and skills and to understand it is not possible to live our religion . We also our presentation, we mainly of Islam o utlook on life and predicted life - style, including the Prophet of Islam 's (sa simple life to scrutinize and lifestyle issues related to reveal , in short Islam's how life has embraced and the Prophet. Prophet's will try to find answers to questions reg arding how to live.

  7. Analytical Subthreshold Current and Subthreshold Swing Models for a Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFET with Back-Gate Control

    Science.gov (United States)

    Saramekala, Gopi Krishna; Tiwari, Pramod Kumar

    2017-08-01

    Two-dimensional (2D) analytical models for the subthreshold current and subthreshold swing of the back-gated fully depleted recessed-source/drain (Re-S/D) silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) are presented. The surface potential is determined by solving the 2D Poisson equation in both channel and buried-oxide (BOX) regions, considering suitable boundary conditions. To derive closed-form expressions for the subthreshold characteristics, the virtual cathode potential expression has been derived in terms of the minimum of the front and back surface potentials. The effect of various device parameters such as gate oxide and Si film thicknesses, thickness of source/drain penetration into BOX, applied back-gate bias voltage, etc. on the subthreshold current and subthreshold swing has been analyzed. The validity of the proposed models is established using the Silvaco ATLAS™ 2D device simulator.

  8. On-chip grating coupler array on the SOI platform for fan-in/fan-out of MCFs with low insertion loss and crosstalk

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ye, Feihong; Peucheret, Christophe

    2015-01-01

    We report the design and fabrication of a compact multi-core fiber fan-in/fan-out using a grating coupler array on the SOI platform. The grating couplers are fully-etched, enabling the whole circuit to be fabricated in a single lithography and etching step. Thanks to the apodized design...... for the grating couplers and the introduction of an aluminum reflective mirror, a highest coupling efficiency of -3.8 dB with 3 dB coupling bandwidth of 48 nm and 1.5 dB bandwidth covering the whole C band, together with crosstalk lower than -32 dB are demonstrated. (C)2015 Optical Society of America...

  9. A simple and efficient electrochemical reductive method for ...

    Indian Academy of Sciences (India)

    Administrator

    This approach opens up a new, practical and green reducing method to prepare large- scale graphene. ... has the following significant advantages: (1) It is simple to operate. .... The authors thank the National High Technology Research.

  10. Quasispecies made simple.

    Directory of Open Access Journals (Sweden)

    2005-11-01

    Full Text Available Quasispecies are clouds of genotypes that appear in a population at mutation-selection balance. This concept has recently attracted the attention of virologists, because many RNA viruses appear to generate high levels of genetic variation that may enhance the evolution of drug resistance and immune escape. The literature on these important evolutionary processes is, however, quite challenging. Here we use simple models to link mutation-selection balance theory to the most novel property of quasispecies: the error threshold-a mutation rate below which populations equilibrate in a traditional mutation-selection balance and above which the population experiences an error catastrophe, that is, the loss of the favored genotype through frequent deleterious mutations. These models show that a single fitness landscape may contain multiple, hierarchically organized error thresholds and that an error threshold is affected by the extent of back mutation and redundancy in the genotype-to-phenotype map. Importantly, an error threshold is distinct from an extinction threshold, which is the complete loss of the population through lethal mutations. Based on this framework, we argue that the lethal mutagenesis of a viral infection by mutation-inducing drugs is not a true error catastophe, but is an extinction catastrophe.

  11. A simple scaler timer

    International Nuclear Information System (INIS)

    Narayanan, R.; Kalavathy, K.R.

    1989-01-01

    In any nuclear reactor, the start-up channels monitor the neutron flux during the start-up operation and give the alarm signals for safety purposes. Normally, a fission chamber is used as a detector to detect the low level neutron fluxes. The output of the detector after amplification and discrimination is shaped in a pulse shaper to provide constant width, constant height pulses for further processing in rate meters. The shaped pulses also go to a scaler timer, where they are counted for fixed time intervals and the accumulated counts displayed. The scaler timer described in this paper uses LSIs to get at a simple, compact and reliable unit. The design is centered around two LSIs. MOS Counter Timebase LSI type MK 5009P (U1) is used to generate the gating pulses. A 1 MHz crystal is used to generate the system clock. A 4 bit address selects the desired gating intervals of 1 or 10 or 100 seconds. In fact, MK 5009 is a very versatile LSI in a 16 pin DIP package, consisting of a MOS oscillator and divider chain. It is binary encoded for frequency division selection ranging from 1 to 36 x 10. With an input frequency of 1 MHz, MK 5009 provides the time periods of 1 μs to 100 seconds, one minute, ten minute and one hour periods. (author)

  12. A Simple Accelerometer Calibrator

    International Nuclear Information System (INIS)

    Salam, R A; Islamy, M R F; Khairurrijal; Munir, M M; Latief, H; Irsyam, M

    2016-01-01

    High possibility of earthquake could lead to the high number of victims caused by it. It also can cause other hazards such as tsunami, landslide, etc. In that case it requires a system that can examine the earthquake occurrence. Some possible system to detect earthquake is by creating a vibration sensor system using accelerometer. However, the output of the system is usually put in the form of acceleration data. Therefore, a calibrator system for accelerometer to sense the vibration is needed. In this study, a simple accelerometer calibrator has been developed using 12 V DC motor, optocoupler, Liquid Crystal Display (LCD) and AVR 328 microcontroller as controller system. The system uses the Pulse Wave Modulation (PWM) form microcontroller to control the motor rotational speed as response to vibration frequency. The frequency of vibration was read by optocoupler and then those data was used as feedback to the system. The results show that the systems could control the rotational speed and the vibration frequencies in accordance with the defined PWM. (paper)

  13. A Simple Spectral Observer

    Directory of Open Access Journals (Sweden)

    Lizeth Torres

    2018-05-01

    Full Text Available The principal aim of a spectral observer is twofold: the reconstruction of a signal of time via state estimation and the decomposition of such a signal into the frequencies that make it up. A spectral observer can be catalogued as an online algorithm for time-frequency analysis because is a method that can compute on the fly the Fourier transform (FT of a signal, without having the entire signal available from the start. In this regard, this paper presents a novel spectral observer with an adjustable constant gain for reconstructing a given signal by means of the recursive identification of the coefficients of a Fourier series. The reconstruction or estimation of a signal in the context of this work means to find the coefficients of a linear combination of sines a cosines that fits a signal such that it can be reproduced. The design procedure of the spectral observer is presented along with the following applications: (1 the reconstruction of a simple periodical signal, (2 the approximation of both a square and a triangular signal, (3 the edge detection in signals by using the Fourier coefficients, (4 the fitting of the historical Bitcoin market data from 1 December 2014 to 8 January 2018 and (5 the estimation of a input force acting upon a Duffing oscillator. To round out this paper, we present a detailed discussion about the results of the applications as well as a comparative analysis of the proposed spectral observer vis-à-vis the Short Time Fourier Transform (STFT, which is a well-known method for time-frequency analysis.

  14. A simple beam analyser

    International Nuclear Information System (INIS)

    Lemarchand, G.

    1977-01-01

    (ee'p) experiments allow to measure the missing energy distribution as well as the momentum distribution of the extracted proton in the nucleus versus the missing energy. Such experiments are presently conducted on SACLAY's A.L.S. 300 Linac. Electrons and protons are respectively analysed by two spectrometers and detected in their focal planes. Counting rates are usually low and include time coincidences and accidentals. Signal-to-noise ratio is dependent on the physics of the experiment and the resolution of the coincidence, therefore it is mandatory to get a beam current distribution as flat as possible. Using new technologies has allowed to monitor in real time the behavior of the beam pulse and determine when the duty cycle can be considered as being good with respect to a numerical basis

  15. Radiation effects in semiconductors: technologies for hardened integrated circuits

    International Nuclear Information System (INIS)

    Charlot, J.M.

    1984-01-01

    Various technologies are used to manufacture integrated circuits for electronic systems. But for specific applications, including those with radiation environment, it is necessary to choose an appropriate technology or to improve a specific one in order to reach a definite hardening level. The aim of this paper is to present the main effects induced by radiation (neutrons and gamma rays) into the basic semiconductor devices, to explain some physical degradation mechanisms and to propose solutions for hardened integrated circuit fabrication. The analysis involves essentially the monolithic structure of the integrated circuits and the isolation technology of active elements. In conclusion, the advantages of EPIC and SOS technologies are described and the potentialities of new technologies (GaAs and SOI) are presented. (author)

  16. Discovery of Teleconnections Using Data Mining Technologies in Global Climate Datasets

    Directory of Open Access Journals (Sweden)

    Fan Lin

    2007-10-01

    Full Text Available In this paper, we apply data mining technologies to a 100-year global land precipitation dataset and a 100-year Sea Surface Temperature (SST dataset. Some interesting teleconnections are discovered, including well-known patterns and unknown patterns (to the best of our knowledge, such as teleconnections between the abnormally low temperature events of the North Atlantic and floods in Northern Bolivia, abnormally low temperatures of the Venezuelan Coast and floods in Northern Algeria and Tunisia, etc. In particular, we use a high dimensional clustering method and a method that mines episode association rules in event sequences. The former is used to cluster the original time series datasets into higher spatial granularity, and the later is used to discover teleconnection patterns among events sequences that are generated by the clustering method. In order to verify our method, we also do experiments on the SOI index and a 100-year global land precipitation dataset and find many well-known teleconnections, such as teleconnections between SOI lower events and drought events of Eastern Australia, South Africa, and North Brazil; SOI lower events and flood events of the middle-lower reaches of Yangtze River; etc. We also do explorative experiments to help domain scientists discover new knowledge.

  17. Low Specific On-Resistance SOI LDMOS with Non-Depleted Embedded P-Island and Dual Trench Gate

    Science.gov (United States)

    Fan, Jie; Sun, Sheng-Ming; Wang, Hai-Zhu; Zou, Yong-Gang

    2018-03-01

    Not Available Supported by the Youth Science Foundation of Changchun University of Science and Technology under Grant No XQNJJ-2015-10, and the Innovation Science Foundation of Changchun University of Science and Technology under Grant No XJJLG-2016-07.

  18. a simple a simple excitation control excitation control excitation

    African Journals Online (AJOL)

    eobe

    field voltages determined follow a simple quadratic relationship that offer a very simple control scheme, dependent on only the stator current. Keywords: saturated reactances, no-load field voltage, excitation control, synchronous generators. 1. Introduction. Introduction. Introduction. The commonest generator in use today is ...

  19. Is simple nephrectomy truly simple? Comparison with the radical alternative.

    Science.gov (United States)

    Connolly, S S; O'Brien, M Frank; Kunni, I M; Phelan, E; Conroy, R; Thornhill, J A; Grainger, R

    2011-03-01

    The Oxford English dictionary defines the term "simple" as "easily done" and "uncomplicated". We tested the validity of this terminology in relation to open nephrectomy surgery. Retrospective review of 215 patients undergoing open, simple (n = 89) or radical (n = 126) nephrectomy in a single university-affiliated institution between 1998 and 2002. Operative time (OT), estimated blood loss (EBL), operative complications (OC) and length of stay in hospital (LOS) were analysed. Statistical analysis employed Fisher's exact test and Stata Release 8.2. Simple nephrectomy was associated with shorter OT (mean 126 vs. 144 min; p = 0.002), reduced EBL (mean 729 vs. 859 cc; p = 0.472), lower OC (9 vs. 17%; 0.087), and more brief LOS (mean 6 vs. 8 days; p < 0.001). All parameters suggest favourable outcome for the simple nephrectomy group, supporting the use of this terminology. This implies "simple" nephrectomies are truly easier to perform with less complication than their radical counterpart.

  20. Radiation effects in semiconductors: technologies for hardened integrated circuits

    International Nuclear Information System (INIS)

    Charlot, J.M.

    1983-09-01

    Various technologies are used to manufacture integrated circuits for electronic systems. But for specific applications, including those with radiation environment, it is necessary to choose an appropriate technologie or to improve a specific one in order to reach a definite hardening level. The aim of this paper is to present the main effects induced by radiation (neutrons and gamma rays) into the basic semiconductor devices, to explain some physical degradation mechanisms and to propose solutions for hardened integrated circuit fabrication. The analysis involves essentially the monolithic structure of the integrated circuits and the isolation technology of active elements. In conclusion, the advantages of EPIC and SOS technologies are described and the potentialities of new technologies (GaAs and SOI) are presented

  1. Vécu des situations scolaires, estime de soi et Développement : du jugement moral a la période de la latence

    Directory of Open Access Journals (Sweden)

    Emile-Henri Riard

    2011-06-01

    Full Text Available Suivant une approche de psychologie sociale clinique, le point de vue adopté dans cet article est triple : 1- considérer les situations scolaires “ ordinaires ” comme potentiellement génératrices de difficultés; 2- s’inscrire en amont de l’adolescence afin d’améliorer la compréhension de cette dernière; 3 – considérer le vécu des élèves. La recherche menée en France (enfants de 6 à 11 ans, par questionnaire (48 situations relevant de la scolarité : classe, cour de récréation, trajet domicile/école et domicile ont été proposées ; test d’estime de soi (Coopersmith ; développement moral (Kohlberg. Variables : âge, sexe, mode d’habitat, position scolaire, classement, département. Les résultats (analyse de variance démontrent un fonctionnement “ en bloc ” du niveau de vécu de difficulté. Ressortent comme variables significatives, par ordre d’importance décroissante: le sexe (les garçons ressentent davantage les difficultés que les filles; l’âge (le niveau de difficulté vécue décroît avec l’âge mais concerne surtout la cour de récréation ; le mode d’habitat (collectif. La classe est l’espace le plus porteur de différences de vécu de difficultés indépendamment des variables. Le niveau d’autonomie et l’estime de soi sont schématiquement inversement proportionnés au niveau de difficulté vécu. La conclusion met l’accent sur l’importance des effets interactif et d’accumulation des situations.

  2. Design of a photonic integrated circuit (pic) in silicon on isolator (soi) technology for a novel chaotic integrated laser light source (chill)

    NARCIS (Netherlands)

    Westerveld, W.J.

    2009-01-01

    A light source with the brightness of a laser but the bandwidth of a LED is required for different fields of applications, such as inspection and metrology in the semiconductor industry, data encryption in telecommunications and LIDAR. Currently, this issue is addressed by so-called coherence

  3. 110 GHz hybrid mode-locked fiber laser with enhanced extinction ratio based on nonlinear silicon-on-insulator micro-ring-resonator (SOI MRR)

    International Nuclear Information System (INIS)

    Liu, Yang; Hsu, Yung; Chow, Chi-Wai; Yang, Ling-Gang; Lai, Yin-Chieh; Yeh, Chien-Hung; Tsang, Hon-Ki

    2016-01-01

    We propose and experimentally demonstrate a new 110 GHz high-repetition-rate hybrid mode-locked fiber laser using a silicon-on-insulator microring-resonator (SOI MRR) acting as the optical nonlinear element and optical comb filter simultaneously. By incorporating a phase modulator (PM) that is electrically driven at a fraction of the harmonic frequency, an enhanced extinction ratio (ER) of the optical pulses can be produced. The ER of the optical pulse train increases from 3 dB to 10 dB. As the PM is only electrically driven by the signal at a fraction of the harmonic frequency, in this case 22 GHz (110 GHz/5 GHz), a low bandwidth PM and driving circuit can be used. The mode-locked pulse width and the 3 dB spectral bandwidth of the proposed mode-locked fiber laser are measured, showing that the optical pulses are nearly transform limited. Moreover, stability evaluation for an hour is performed, showing that the proposed laser can achieve stable mode-locking without the need for optical feedback or any other stabilization mechanism. (letter)

  4. Écritures de soi en souffrance: une lecture des régimes structurant l’imaginaire du texte social vivant

    Directory of Open Access Journals (Sweden)

    Orazio Maria Valastro

    2010-02-01

    Full Text Available Les études ici réunies vont nous permettre d’examiner différentes genres d’écritures et typologies d’écrivains (poétique et épistolaire, roman autobiographique et autofiction, narratif et témoignage, explorant un corpus considérable (œuvres littéraires et littératures personnelles et des pratiques significatives (activités narratives et autobiographiques. Le thème proposé, les écritures de soi en souffrance, se dénoue sollicitant une réflexion sur les rapports entre les œuvres et les différents contextes sociaux et historiques. Nous pouvons envisager et saisir l’ensemble du corpus et des pratiques considérées en tant que texte social vivant, inscrivant l’expérience de l’existence et du monde dans la pratique de l’écriture. (... Nous allons solliciter et proposer une lecture sociologique et anthropologique de l’ensemble des études proposés au sein du numéro monographique, privilégiant une analyse de la matrice du discours social structurant la conscience individuelle et collective.

  5. Housing First for People With Severe Mental Illness Who Are Homeless: A Review of the Research and Findings From the At Home–Chez soi Demonstration Project

    Science.gov (United States)

    Aubry, Tim; Nelson, Geoffrey; Tsemberis, Sam

    2015-01-01

    Objective: To provide a review of the extant research literature on Housing First (HF) for people with severe mental illness (SMI) who are homeless and to describe the findings of the recently completed At Home (AH)–Chez soi (CS) demonstration project. HF represents a paradigm shift in the delivery of community mental health services, whereby people with SMI who are homeless are supported through assertive community treatment or intensive case management to move into regular housing. Method: The AH–CS demonstration project entailed a randomized controlled trial conducted in 5 Canadian cities between 2009 and 2013. Mixed methods were used to examine the implementation of HF programs and participant outcomes, comparing 1158 people receiving HF to 990 people receiving standard care. Results: Initial research conducted in the United States shows HF to be a promising approach, yielding superior outcomes in helping people to rapidly exit homelessness and establish stable housing. Findings from the AH–CS demonstration project reveal that HF can be successfully adapted to different contexts and for different populations without losing its fidelity. People receiving HF achieved superior housing outcomes and showed more rapid improvements in community functioning and quality of life than those receiving treatment as usual. Conclusions: Knowledge translation efforts have been undertaken to disseminate the positive findings and lessons learned from the AH–CS project and to scale up the HF approach across Canada. PMID:26720504

  6. Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using Y and Z Functions

    Directory of Open Access Journals (Sweden)

    A. Karsenty

    2014-01-01

    Full Text Available The saturation regime of two types of fully depleted (FD SOI MOSFET devices was studied. Ultrathin body (UTB and gate recessed channel (GRC devices were fabricated simultaneously on the same silicon wafer through a selective “gate recessed” process. They share the same W/L ratio but have a channel film thickness of 46 nm and 2.2 nm, respectively. Their standard characteristics (IDS-VDS and IDS-VGS of the devices were measured at room temperature before cooling down to 77 K. Surprisingly, their respective temperature dependence is found to be opposite. In this paper, we focus our comparative analysis on the devices' conduction using a Y-function applied to the saturation domain. The influence of the temperature in this domain is presented for the first time. We point out the limits of the Y-function analysis and show that a new function called Z can be used to extract the series resistance in the saturation regime.

  7. Compliments, motivation et estime de soi : l'effet paradoxal de féliciter les capacités des enfants

    DEFF Research Database (Denmark)

    Hansen, Mikkel

    2014-01-01

    motivation may suffer when given feedback that evaluates their person. We discuss links between different types of feedback and children’s motivational frameworks, including their self-esteem. // RÉSUMÉ L’objectif de compliments tels que « T’es très fort, très intelligent » est d’encourager les enfants, mais...... des recherches récentes montrent que de telles propositions en feedback peuvent dissuader les enfants de s’engager dans des tâches difficiles, réduisant ainsi leurs apprentissages. Nous exposerons les travaux de Dweck (e.g., 2000) qui démontrent comment les compliments centrés sur l’évaluation de la...... personne influent négativement sur la motivation intrinsèque du sujet. Nous discuterons des liens existant entre différents types de feedback et les cadres motivationnels où évoluent les enfants, ainsi que de leur estime de soi....

  8. Simple Solutions for Dry Eye

    Science.gov (United States)

    Patient Education Sheet Simple Solutions for Dry Eye The SSF thanks J. Daniel Nelson, MD, Associate Medical Director, Specialty Care HealthPartners Medical Group & Clinics, and Professor of Ophthalmology, University of ...

  9. Factors Influencing Self-Regulation in E-learning 2.0: Confirmatory Factor Model | Facteurs qui influencent la maîtrise de soi en cyberapprentissage 2.0 : modèle de facteur confirmative

    Directory of Open Access Journals (Sweden)

    Hong Zhao

    2016-04-01

    Full Text Available The importance of self-regulation in e-learning has been well noted in research. Relevant studies have shown a consistent positive correlation between learners’ self-regulation and their success rate in e-learning. Increasing attention has been paid to developing learners’ self-regulated abilities in e-learning. For students, what and how to learn are largely predetermined by the learning environment provided by their institutions. Environmental determinants play a key role in shaping self-regulation in the learning process. This paper reports a study on the influences of the e-learning 2.0 environment on self-regulation. The study identified the factors that influence self-regulation in such an environment and determine the relationships between the factors and self-regulation. A theoretical model to categorize the success factors for self-regulated learning was proposed for this kind of environment. Based on the model, a questionnaire was designed and administered to more than two hundred and fifty distance learning students in Beijing and Hong Kong. Through structural equation modeling (SEM technique, relationships between environmental factors and self-regulation were analyzed. Statistical results showed that several factors affect self-regulation in the e-learning 2.0 environment. They include system quality, information quality, service quality, and user satisfaction. L’importance de la maîtrise de soi en cyberapprentissage a été bien étudiée. Les études pertinentes ont démontré une corrélation positive uniforme entre la maîtrise de soi des apprenants et leurs taux de réussite en apprentissage en ligne. Une attention croissante a été portée au développement des aptitudes de maîtrise de soi des élèves en cyberapprentissage. Pour les élèves, quoi apprendre et comment sont des questions principalement prédéterminées par l’environnement d’apprentissage qu’offrent leurs établissements. Les d

  10. Simple Tidal Prism Models Revisited

    Science.gov (United States)

    Luketina, D.

    1998-01-01

    Simple tidal prism models for well-mixed estuaries have been in use for some time and are discussed in most text books on estuaries. The appeal of this model is its simplicity. However, there are several flaws in the logic behind the model. These flaws are pointed out and a more theoretically correct simple tidal prism model is derived. In doing so, it is made clear which effects can, in theory, be neglected and which can not.

  11. A discerning approach to simple aesthetic orthodontics.

    Science.gov (United States)

    Noar, J H; Sharma, S; Roberts-Harry, D; Qureshi, T

    2015-02-16

    There is currently considerable interest from general dental practitioners (GDPs) in the use of simple orthodontics to treat adult malocclusions. There is controversy in this, particularly in relation to 'quick fixes', simple orthodontics and 'straight teeth in six months' as opposed to more conventional treatment where the whole malocclusion is treated. This article will present a case for the use of simple aesthetic adult orthodontics in a measured and planned way. It will discuss the processes, planning and the importance of consent. It will also highlight how digital technology is used to preview, consent and execute an aesthetic result. Many of the recent systems emerging, have been as a result of the demand and supply of cosmetic dentistry. This, to a degree, has not helped since the implication of a 'quick-fix' is associated with this field. There has also been discussion on what the limits of GDP orthodontics should be. There is variability in how GDPs approach orthodontics, their experience, skill and ability to treat to an acceptable standard. Short courses may be one way of delivering orthodontic training but some of these courses are not regulated and the amount of internal mentoring is variable. This article highlights some of the systems in use, and potential upsides and downsides of this approach.

  12. The impact of silicon nano-wire technology on the design of single-work-function CMOS transistors and circuits

    International Nuclear Information System (INIS)

    Bindal, Ahmet; Hamedi-Hagh, Sotoudeh

    2006-01-01

    This three-dimensional exploratory study on vertical silicon wire MOS transistors with metal gates and undoped bodies demonstrates that these transistors dissipate less power and occupy less layout area while producing comparable transient response with respect to the state-of-the-art bulk and SOI technologies. The study selects a single metal gate work function for both NMOS and PMOS transistors to alleviate fabrication difficulties and then determines a common device geometry to produce an OFF current smaller than 1 pA for each transistor. Once an optimum wire radius and effective channel length is determined, DC characteristics including threshold voltage roll-off, drain-induced barrier lowering and sub-threshold slope of each transistor are measured. Simple CMOS gates such as an inverter, two- and three-input NAND, NOR and XOR gates and a full adder, composed of the optimum NMOS and PMOS transistors, are built to measure transient performance, power dissipation and layout area. Simulation results indicate that worst-case transient time and worst-case delay are 1.63 and 1.46 ps, respectively, for a two-input NAND gate and 7.51 and 7.43 ps, respectively, for a full adder for a fan-out of six transistor gates (24 aF). Worst-case power dissipation is 62.1 nW for a two-input NAND gate and 118.1 nW for a full adder at 1 GHz for the same output capacitance. The layout areas are 0.0066 μm 2 for the two-input NAND gate and 0.049 μm 2 for the full adder circuits

  13. Simple arithmetic: not so simple for highly math anxious individuals.

    Science.gov (United States)

    Chang, Hyesang; Sprute, Lisa; Maloney, Erin A; Beilock, Sian L; Berman, Marc G

    2017-12-01

    Fluency with simple arithmetic, typically achieved in early elementary school, is thought to be one of the building blocks of mathematical competence. Behavioral studies with adults indicate that math anxiety (feelings of tension or apprehension about math) is associated with poor performance on cognitively demanding math problems. However, it remains unclear whether there are fundamental differences in how high and low math anxious individuals approach overlearned simple arithmetic problems that are less reliant on cognitive control. The current study used functional magnetic resonance imaging to examine the neural correlates of simple arithmetic performance across high and low math anxious individuals. We implemented a partial least squares analysis, a data-driven, multivariate analysis method to measure distributed patterns of whole-brain activity associated with performance. Despite overall high simple arithmetic performance across high and low math anxious individuals, performance was differentially dependent on the fronto-parietal attentional network as a function of math anxiety. Specifically, low-compared to high-math anxious individuals perform better when they activate this network less-a potential indication of more automatic problem-solving. These findings suggest that low and high math anxious individuals approach even the most fundamental math problems differently. © The Author (2017). Published by Oxford University Press.

  14. Generalized Gradient Approximation Made Simple

    International Nuclear Information System (INIS)

    Perdew, J.P.; Burke, K.; Ernzerhof, M.

    1996-01-01

    Generalized gradient approximations (GGA close-quote s) for the exchange-correlation energy improve upon the local spin density (LSD) description of atoms, molecules, and solids. We present a simple derivation of a simple GGA, in which all parameters (other than those in LSD) are fundamental constants. Only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked. Improvements over PW91 include an accurate description of the linear response of the uniform electron gas, correct behavior under uniform scaling, and a smoother potential. copyright 1996 The American Physical Society

  15. FEM for modelling 193 nm excimer laser treatment of SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub x} heterostructures on SOI substrates

    Energy Technology Data Exchange (ETDEWEB)

    Conde, J.C.; Chiussi, S.; Gontad, F.; Gonzalez, P. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas, Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain)

    2011-03-15

    Research on epitaxial crystalline silicon (c-Si) and silicon-germanium (Si{sub 1-x}Ge{sub x}) alloys growth and annealing for microelectronic purposes, such as Micro- or Nano-Electro-Mechanical Systems (MEMS or NEMS) and Silicon-On-Nothing (SON) devices is continuously in progress. Laser assisted annealing techniques using commercial ArF Excimer Laser sources are based on ultra-rapid heating and cooling cycles induced by the 193 nm pulses of 20 ns, which are absorbed in the near surface region of the heterostructures. During and after the absorption of these laser pulses, complex physical processes appear that strongly depend on sample structure and applied laser pulse energy densities. The control of the experimental parameters is therefore a key task for obtaining high quality alloys. The Finite ElementsMethod (FEM) is a powerful tool for the optimization of such treatments, because it provides the spatial and temporal temperature fields that are produced by the laser pulses. In this work, we have used a FEM commercial software, to predict the temperatures gradients induced by ArF excimer laser over a wide energy densities range, 0.1<{phi}<0.4 J/cm{sup 2}, on different SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub (x)} thin films deposited on SOI substrate. These numerical results allow us to predict the threshold energies needed to reach the melting point (MP) of the Si and SiGe alloy without oxidation of the thin films system. Therefore, it is possible to optimize the conditions to achieve high quality epitaxy films. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Emergence Issues - not so simple

    African Journals Online (AJOL)

    Anaesthetics Supplement: Emergence Issues - not so simple. S Afr Fam Pract 2014. Vol 56 No 2 Supplement 1. Introduction. Emergence from anaesthesia is by definition the process of return to baseline physiological function of all organ systems after cessation of administration of general anaesthesia and is the stage from ...

  17. On framed simple Lie groups

    OpenAIRE

    MINAMI, Haruo

    2016-01-01

    For a compact simple Lie group $G$, we show that the element $[G, \\mathcal{L}] \\in \\pi^S_*(S^0)$ represented by the pair $(G, \\mathcal{L})$ is zero, where $\\mathcal{L}$ denotes the left invariant framing of $G$. The proof relies on the method of E. Ossa [Topology, 21 (1982), 315–323].

  18. The simple ethers of glycerin

    International Nuclear Information System (INIS)

    Kimsanov, B.Kh.; Karimov, M.B.

    1998-01-01

    From glycerin derivatives the considerable interest is present simple ethers because many of them are biological active and found wide practical using as an effect drugs, inters for thin organic synthesis, vehicle for injections, regulators of plants growth, reagents, components for perfumery-cosmetic goods and etc

  19. Solving Simple Kinetics without Integrals

    Science.gov (United States)

    de la Pen~a, Lisandro Herna´ndez

    2016-01-01

    The solution of simple kinetic equations is analyzed without referencing any topic from differential equations or integral calculus. Guided by the physical meaning of the rate equation, a systematic procedure is used to generate an approximate solution that converges uniformly to the exact solution in the case of zero, first, and second order…

  20. Grief: Difficult Times, Simple Steps.

    Science.gov (United States)

    Waszak, Emily Lane

    This guide presents techniques to assist others in coping with the loss of a loved one. Using the language of 9 layperson, the book contains more than 100 tips for caregivers or loved ones. A simple step is presented on each page, followed by reasons and instructions for each step. Chapters include: "What to Say"; "Helpful Things to Do"; "Dealing…

  1. Simple stålrammebygninger

    DEFF Research Database (Denmark)

    Ellum, J.C.

    Anvisningen gennemgår dimensioneringen og bringer detaljerede konstruktionstegninger til simple stålrammebygninger, dvs. lukkede, fritliggende bygninger i én etage, hvor tagkonstruktionen ud over egenlast kun er påvirket af naturlaster, dvs. sne og vind. Dimensioneringen sker ved at udfylde et di...

  2. Simple models with ALICE fluxes

    CERN Document Server

    Striet, J

    2000-01-01

    We introduce two simple models which feature an Alice electrodynamics phase. In a well defined sense the Alice flux solutions we obtain in these models obey first order equations similar to those of the Nielsen-Olesen fluxtube in the abelian higgs model in the Bogomol'nyi limit. Some numerical solutions are presented as well.

  3. Structure of simple liquids; Structure des liquides simples

    Energy Technology Data Exchange (ETDEWEB)

    Blain, J F [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

    1969-07-01

    The results obtained by application to argon and sodium of the two important methods of studying the structure of liquids: scattering of X-rays and neutrons, are presented on one hand. On the other hand the principal models employed for reconstituting the structure of simple liquids are exposed: mathematical models, lattice models and their derived models, experimental models. (author) [French] On presente d'une part les resultats obtenus par application a l'argon et au sodium des deux principales methodes d'etude de la structure des liquides: la diffusion des rayons X et la diffusion des neutrons; d'autre part, les principaux modeles employes pour reconstituer la structure des liquides simples sont exposes: modeles mathematiques, modeles des reseaux et modeles derives, modeles experimentaux. (auteur)

  4. Fiscal 2000 achievement report. Development of prompt-effect technology for innovative energy environment (Research and development of extremely low power consuming LSI for information terminal); 2000 nendo sokkoteki kakushinteki energy kankyo gijutsu kaihatsu seika hokokusho. Gokuteidenryoku joho tanmatsuyo LSI no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    With the advancement of information technologies, multimedia information terminals such as handyphone systems and mobile computers are increasing in number and improving in quality, sharply increasing power consumption in this domain. So as to suppress the power consumption, efforts are exerted to develop technologies for information terminal LSI (large-scale integration) substrates consuming extremely low power and still capable of high-speed operation. Studied are a device technology of SOI (silicon on insulator) to realize a remarkable reduction in power consumption and enable high-speed operation and a circuit technology of the multi-threshold CMOS (complementary metal-oxide semiconductor) advantageous to the achievement of low-voltage high-speed operation. In concrete terms, the efforts center about an extremely thin film SOI device of the full depletion type higher in transistor driving capability, lower in load capacity, and smaller in surface area than those currently in use, and aim to put such an SOI device on an optimized multi-threshold CMOS circuit for the establishment of techniques toward the embodiment of an LSI substrate consuming extremely low electric power. (NEDO)

  5. Technology for the compatible integration of silicon detectors with readout electronics

    International Nuclear Information System (INIS)

    Zimmer, G.

    1984-01-01

    Compatible integration of detectors and readout electronics on the same silicon substrate is of growing interest. As the methods of microelectronics technology have already been adapted for detector fabrication, a common technology basis for detectors and readout electronics is available. CMOS technology exhibits most attractive features for the compatible realization of readout electronics when advanced LSI processing steps are combined with detector requirements. The essential requirements for compatible integration are the availability of high resistivity (100)-oriented single crystalline silicon substrate, the formation of suitably doped areas for MOS circuits and the isolation of the low voltage circuit from the detector operated at much higher supply voltage. Junction isolation as a first approach based on present production technology and dielectric isolation based on an advanced SOI-LSI technology are discussed as the most promising solutions for present and future applications, respectively. (orig.)

  6. Investigation of charge-collection efficiency of Kyoto's X-ray astronomical SOI pixel sensors, XRPIX

    Energy Technology Data Exchange (ETDEWEB)

    Matsumura, Hideaki, E-mail: matumura@cr.scphys.kyoto-u.ac.jp [Department of Physics, Graduate School of Science, Kyoto University, Kitashirakawa Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan); Tsuru, Takeshi Go; Tanaka, Takaaki; Nakashima, Shinya; Ryu, Syukyo G. [Department of Physics, Graduate School of Science, Kyoto University, Kitashirakawa Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan); Takeda, Ayaki [Department of Particle and Nuclear Physics, Graduate School of High Energy Accelerator Science, The Graduate University for Advanced Studies (SOKENDAI), High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Arai, Yasuo; Miyoshi, Toshinobu [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan)

    2014-11-21

    We are developing a monolithic active pixel sensor referred to as XRPIX for X-ray astronomy on the basis of silicon-on-insulator CMOS technology. A crucial issue in our recent development is the impact of incomplete charge collection on the spectroscopic performance. In this paper, we report the spectral responses of several devices having different intra-pixel structures or produced from different wafers. We found that an emission line spectrum exhibits large low-energy tails when the size of the buried p-well, which acts as the charge-collection node, is small. Moreover, in charge sharing events, the peak channels of the emission lines shift toward channels lower than those without charge sharing. This peak shift is more pronounced as the distance between the pixel center and the position of incident photon increases. This suggests that the charge-collection efficiency is degraded at the pixel boundary. We also found that the charge-collection efficiency depends on the strength of the electric field at the interface of the depletion and insulator layers.

  7. Si-nanowire-based multistage delayed Mach-Zehnder interferometer optical MUX/DeMUX fabricated by an ArF-immersion lithography process on a 300 mm SOI wafer.

    Science.gov (United States)

    Jeong, Seok-Hwan; Shimura, Daisuke; Simoyama, Takasi; Horikawa, Tsuyoshi; Tanaka, Yu; Morito, Ken

    2014-07-01

    We report good phase controllability and high production yield in Si-nanowire-based multistage delayed Mach-Zehnder interferometer-type optical multiplexers/demultiplexers (MUX/DeMUX) fabricated by an ArF-immersion lithography process on a 300 mm silicon-on-insulator (SOI) wafer. Three kinds of devices fabricated in this work exhibit clear 1×4 Ch wavelength filtering operations for various optical frequency spacing. These results are promising for their applications in high-density wavelength division multiplexing-based optical interconnects.

  8. New dynamic silicon photonic components enabled by MEMS technology

    Science.gov (United States)

    Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

    2018-02-01

    Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

  9. Simple technologies for complex problems: in situ denitrification

    CSIR Research Space (South Africa)

    Clarke, S

    2012-10-01

    Full Text Available has been highlighted (Tredoux et al., XXXX; Maherry et al, 2011). In South Africa, the ideal drinking water guideline (DWAF, 1998) has less than 6 mg/L nitrate (plus nitrite) as N (?blue? or Class 0), while the ?marginal? water quality guideline... is a maximum concentration of 20 mg/L (?yellow? or Class II). This is generally in agreement with the World Health Organization guidelines. However, in many areas of South Africa, nitrate levels exceed the maximum concentration of 40 mg/L of ?poor...

  10. Humanizing Chemistry Education: From Simple Contextualization to Multifaceted Problematization

    Science.gov (United States)

    Sjöström, Jesper; Talanquer, Vicente

    2014-01-01

    Chemistry teaching has traditionally been weakly connected to everyday life, technology, society, and history and philosophy of science. This article highlights knowledge areas and perspectives needed by the humanistic (and critical-reflexive) chemistry teacher. Different humanistic approaches in chemistry teaching, from simple contextualization…

  11. Simple Electromagnetic Analysis in Cryptography

    Directory of Open Access Journals (Sweden)

    Zdenek Martinasek

    2012-07-01

    Full Text Available The article describes the main principle and methods of simple electromagnetic analysis and thus provides an overview of simple electromagnetic analysis.The introductions chapters describe specific SPA attack used visual inspection of EM traces, template based attack and collision attack.After reading the article, the reader is sufficiently informed of any context of SEMA.Another aim of the article is the practical realization of SEMA which is focused on AES implementation.The visual inspection of EM trace of AES is performed step by step and the result is the determination of secret key Hamming weight.On the resulting EM trace, the Hamming weight of the secret key 1 to 8 was clearly visible.This method allows reduction from the number of possible keys for following brute force attack.

  12. Complexity-aware simple modeling.

    Science.gov (United States)

    Gómez-Schiavon, Mariana; El-Samad, Hana

    2018-02-26

    Mathematical models continue to be essential for deepening our understanding of biology. On one extreme, simple or small-scale models help delineate general biological principles. However, the parsimony of detail in these models as well as their assumption of modularity and insulation make them inaccurate for describing quantitative features. On the other extreme, large-scale and detailed models can quantitatively recapitulate a phenotype of interest, but have to rely on many unknown parameters, making them often difficult to parse mechanistically and to use for extracting general principles. We discuss some examples of a new approach-complexity-aware simple modeling-that can bridge the gap between the small-scale and large-scale approaches. Copyright © 2018 Elsevier Ltd. All rights reserved.

  13. Simple Functions Spreadsheet tool presentation

    International Nuclear Information System (INIS)

    Grive, Mireia; Domenech, Cristina; Montoya, Vanessa; Garcia, David; Duro, Lara

    2010-09-01

    This document is a guide for users of the Simple Functions Spreadsheet tool. The Simple Functions Spreadsheet tool has been developed by Amphos 21 to determine the solubility limits of some radionuclides and it has been especially designed for Performance Assessment exercises. The development of this tool has been promoted by the necessity expressed by SKB of having a confident and easy-to-handle tool to calculate solubility limits in an agile and relatively fast manner. Its development started in 2005 and since then, it has been improved until the current version. This document describes the accurate and preliminary study following expert criteria that has been used to select the simplified aqueous speciation and solid phase system included in the tool. This report also gives the basic instructions to use this tool and to interpret its results. Finally, this document also reports the different validation tests and sensitivity analyses that have been done during the verification process

  14. Gradings on simple Lie algebras

    CERN Document Server

    Elduque, Alberto

    2013-01-01

    Gradings are ubiquitous in the theory of Lie algebras, from the root space decomposition of a complex semisimple Lie algebra relative to a Cartan subalgebra to the beautiful Dempwolff decomposition of E_8 as a direct sum of thirty-one Cartan subalgebras. This monograph is a self-contained exposition of the classification of gradings by arbitrary groups on classical simple Lie algebras over algebraically closed fields of characteristic not equal to 2 as well as on some nonclassical simple Lie algebras in positive characteristic. Other important algebras also enter the stage: matrix algebras, the octonions, and the Albert algebra. Most of the presented results are recent and have not yet appeared in book form. This work can be used as a textbook for graduate students or as a reference for researchers in Lie theory and neighboring areas.

  15. Licensing of simple digital devices

    International Nuclear Information System (INIS)

    Jackson, T. W.

    2008-01-01

    The inability to guarantee error-free software gave rise to the potential for common-cause failure of digital safety systems in nuclear power plants. To address this vulnerability, the U. S. Nuclear Regulatory Commission (NRC) required a quality software development process and a defense-in-depth and diversity analysis for digital safety systems. As a result of recent interim [NRC] staff guidance in the digital instrumentation and control (I and C) area, licensing of simple digital devices decreases some regulatory burden with respect to demonstrating a quality software development process and defense-in-depth and diversity analysis. This paper defines simple digital devices and addresses the interim staff guidance that applies to such devices. The paper also highlights the technical aspects that affect the licensing of such devices and incorporates licensing experience in the U.S. to date. (authors)

  16. A simple electron plasma wave

    International Nuclear Information System (INIS)

    Brodin, G.; Stenflo, L.

    2017-01-01

    Considering a class of solutions where the density perturbations are functions of time, but not of space, we derive a new exact large amplitude wave solution for a cold uniform electron plasma. This result illustrates that most simple analytical solutions can appear even if the density perturbations are large. - Highlights: • The influence of large amplitude electromagnetic waves on electrostatic oscillations is found. • A generalized Mathieu equation is derived. • Anharmonic wave profiles are computed numerically.

  17. A Simple Probabilistic Combat Model

    Science.gov (United States)

    2016-06-13

    Government may violate any copyrights that exist in this work. This page intentionally left blank. ABSTRACT The Lanchester ...page intentionally left blank. TABLE OF CONTENTS Page No.Abstract iii List of Illustrations vii 1. INTRODUCTION 1 2. DETERMINISTIC LANCHESTER MODEL...This page intentionally left blank. 1. INTRODUCTION The Lanchester combat model1 is a simple way to assess the effects of quantity and quality

  18. A simple electron plasma wave

    Energy Technology Data Exchange (ETDEWEB)

    Brodin, G., E-mail: gert.brodin@physics.umu.se [Department of Physics, Umeå University, SE-901 87 Umeå (Sweden); Stenflo, L. [Department of Physics, Linköping University, SE-581 83 Linköping (Sweden)

    2017-03-18

    Considering a class of solutions where the density perturbations are functions of time, but not of space, we derive a new exact large amplitude wave solution for a cold uniform electron plasma. This result illustrates that most simple analytical solutions can appear even if the density perturbations are large. - Highlights: • The influence of large amplitude electromagnetic waves on electrostatic oscillations is found. • A generalized Mathieu equation is derived. • Anharmonic wave profiles are computed numerically.

  19. Simple and Realistic Data Generation

    DEFF Research Database (Denmark)

    Pedersen, Kenneth Houkjær; Torp, Kristian; Wind, Rico

    2006-01-01

    This paper presents a generic, DBMS independent, and highly extensible relational data generation tool. The tool can efficiently generate realistic test data for OLTP, OLAP, and data streaming applications. The tool uses a graph model to direct the data generation. This model makes it very simple...... to generate data even for large database schemas with complex inter- and intra table relationships. The model also makes it possible to generate data with very accurate characteristics....

  20. Classification of simple current invariants

    CERN Document Server

    Gato-Rivera, Beatriz

    1992-01-01

    We summarize recent work on the classification of modular invariant partition functions that can be obtained with simple currents in theories with a center (Z_p)^k with p prime. New empirical results for other centers are also presented. Our observation that the total number of invariants is monodromy-independent for (Z_p)^k appears to be true in general as well. (Talk presented in the parallel session on string theory of the Lepton-Photon/EPS Conference, Geneva, 1991.)

  1. Instant simple botting with PHP

    CERN Document Server

    Anderson, Shay Michael

    2013-01-01

    do for you, and then get to work with the most important features and tasks. This book is a hands-on Starter guide that takes the reader from initialization to the coding and implementation of bot apps.Instant Simple Botting with PHP targets programmers of all levels who are familiar with common PHP functions and syntax, and who want to learn about bots and how to design and develop bots using objects.

  2. What's special about human technology?

    OpenAIRE

    Robert Aunger

    2010-01-01

    Human technology is difficult to understand because it is so complex. However, human technology evolved from the simpler technologies of other species. Comparison with these other technologies should illuminate why human technology is distinct. Some birds and primates make tools, or simple technological objects whose function is closely related to their form. Humans, on the other hand, make machines--relatively complex objects whose functionality derives from the interaction of parts with res...

  3. Ending homelessness among people with mental illness: the At Home/Chez Soi randomized trial of a Housing First intervention in Toronto

    Directory of Open Access Journals (Sweden)

    Hwang Stephen W

    2012-09-01

    Full Text Available Abstract Background The At Home/Chez Soi (AH/CS Project is a randomized controlled trial of a Housing First intervention to meet the needs of homeless individuals with mental illness in five cities across Canada. The objectives of this paper are to examine the approach to participant recruitment and community engagement at the Toronto site of the AH/CS Project, and to describe the baseline demographics of participants in Toronto. Methods Homeless individuals (n = 575 with either high needs (n = 197 or moderate needs (n = 378 for mental health support were recruited through service providers in the city of Toronto. Participants were randomized to Housing First interventions or Treatment as Usual (control groups. Housing First interventions were offered at two different mental health service delivery levels: Assertive Community Treatment for high needs participants and Intensive Case Management for moderate needs participants. Demographic data were collected via quantitative questionnaires at baseline interviews. Results The effectiveness of the recruitment strategy was influenced by a carefully designed referral system, targeted recruitment of specific groups, and an extensive network of pre-existing services. Community members, potential participants, service providers, and other stakeholders were engaged through active outreach and information sessions. Challenges related to the need for different sectors to work together were resolved through team building strategies. Randomization produced similar demographic, mental health, cognitive and functional impairment characteristics in the intervention and control groups for both the high needs and moderate needs groups. The majority of participants were male (69%, aged >40 years (53%, single/never married (69%, without dependent children (71%, born in Canada (54%, and non-white (64%. Many participants had substance dependence (38%, psychotic disorder (37%, major depressive episode (36

  4. What Is a Simple Liquid?

    Directory of Open Access Journals (Sweden)

    Trond S. Ingebrigtsen

    2012-03-01

    Full Text Available This paper is an attempt to identify the real essence of simplicity of liquids in John Locke’s understanding of the term. Simple liquids are traditionally defined as many-body systems of classical particles interacting via radially symmetric pair potentials. We suggest that a simple liquid should be defined instead by the property of having strong correlations between virial and potential-energy equilibrium fluctuations in the NVT ensemble. There is considerable overlap between the two definitions, but also some notable differences. For instance, in the new definition simplicity is not a direct property of the intermolecular potential because a liquid is usually only strongly correlating in part of its phase diagram. Moreover, not all simple liquids are atomic (i.e., with radially symmetric pair potentials and not all atomic liquids are simple. The main part of the paper motivates the new definition of liquid simplicity by presenting evidence that a liquid is strongly correlating if and only if its intermolecular interactions may be ignored beyond the first coordination shell (FCS. This is demonstrated by NVT simulations of the structure and dynamics of several atomic and three molecular model liquids with a shifted-forces cutoff placed at the first minimum of the radial distribution function. The liquids studied are inverse power-law systems (r^{-n} pair potentials with n=18,6,4, Lennard-Jones (LJ models (the standard LJ model, two generalized Kob-Andersen binary LJ mixtures, and the Wahnstrom binary LJ mixture, the Buckingham model, the Dzugutov model, the LJ Gaussian model, the Gaussian core model, the Hansen-McDonald molten salt model, the Lewis-Wahnstrom ortho-terphenyl model, the asymmetric dumbbell model, and the single-point charge water model. The final part of the paper summarizes properties of strongly correlating liquids, emphasizing that these are simpler than liquids in general. Simple liquids, as defined here, may be

  5. Exploring the value of mixed methods within the At Home/Chez Soi housing first project: a strategy to evaluate the implementation of a complex population health intervention for people with mental illness who have been homeless.

    Science.gov (United States)

    Macnaughton, Eric L; Goering, Paula N; Nelson, Geoffrey B

    2012-05-02

    This paper is a methodological case study that describes the At Home/Chez Soi (Housing First) Initiative's mixed-methods strategy for implementation evaluation and discusses the value of these methods in evaluating the implementation of such complex population health interventions. The Housing First (HF) model is being implemented in five cities: Vancouver, Winnipeg, Toronto, Montréal and Moncton. At Home/Chez Soi is an intervention trial that aims to address the issue of homelessness in people with mental health issues. The HF model emphasizes choices, hopefulness and connecting people with resources that make a difference to their quality of life. A component of HF is supported housing, which provides a rent subsidy and rapid access to housing of choice in private apartments; a second component is support. Quantitative and qualitative methods were used to evaluate HF implementation. The findings of this case study illustrate how the critical ingredients of complex interventions, such as HF, can be adapted to different contexts while implementation fidelity is maintained at a theoretical level. The findings also illustrate how the project's mixed methods approach helped to facilitate the adaptation process. Another value of this approach is that it identifies systemic and organizational factors (e.g., housing supply, discrimination, housing procurement strategy) that affect implementation of key elements of HF. In general, the approach provides information about both whether and how key aspects of the intervention are implemented effectively across different settings. It thus provides implementation data that are rigorous, contextually relevant and practical.

  6. The role of advocacy coalitions in a project implementation process: the example of the planning phase of the At Home/Chez Soi project dealing with homelessness in Montreal.

    Science.gov (United States)

    Fleury, Marie-Josée; Grenier, Guy; Vallée, Catherine; Hurtubise, Roch; Lévesque, Paul-André

    2014-08-01

    This study analyzed the planning process (summer 2008 to fall 2009) of a Montreal project that offers housing and community follow-up to homeless people with mental disorders, with or without substance abuse disorders. With the help of the Advocacy Coalition Framework (ACF), advocacy groups that were able to navigate a complex intervention implementation process were identified. In all, 25 people involved in the Montreal At Home/Chez Soi project were surveyed through interviews (n=18) and a discussion group (n=7). Participant observations and documentation (minutes and correspondence) were also used for the analysis. The start-up phase of the At Home/Chez may be broken down into three separate periods qualified respectively as "honeymoon;" "clash of cultures;" and "acceptance & commitment". In each of the planning phases of the At Home/Chez Soi project in Montreal, at least two advocacy coalitions were in confrontation about their specific belief systems concerning solutions to address the recurring homelessness social problem, while a third, more moderate one contributed in rallying most key actors under specified secondary aspects. The study confirms the importance of policy brokers in achieving compromises acceptable to all advocacy coalitions. Copyright © 2014 Elsevier Ltd. All rights reserved.

  7. Correlation and simple linear regression.

    Science.gov (United States)

    Zou, Kelly H; Tuncali, Kemal; Silverman, Stuart G

    2003-06-01

    In this tutorial article, the concepts of correlation and regression are reviewed and demonstrated. The authors review and compare two correlation coefficients, the Pearson correlation coefficient and the Spearman rho, for measuring linear and nonlinear relationships between two continuous variables. In the case of measuring the linear relationship between a predictor and an outcome variable, simple linear regression analysis is conducted. These statistical concepts are illustrated by using a data set from published literature to assess a computed tomography-guided interventional technique. These statistical methods are important for exploring the relationships between variables and can be applied to many radiologic studies.

  8. Systems analysis made simple computerbooks

    CERN Document Server

    Antill, Lyn

    1980-01-01

    Systems Analysis: Made Simple Computerbooks introduces the essential elements of information systems analysis and design and teaches basic technical skills required for the tasks involved. The book covers the aspects to the design of an information system; information systems and the organization, including the types of information processing activity and computer-based information systems; the role of the systems analyst; and the human activity system. The text also discusses information modeling, socio-technical design, man-machine interface, and the database design. Software specification

  9. Computer electronics made simple computerbooks

    CERN Document Server

    Bourdillon, J F B

    1975-01-01

    Computer Electronics: Made Simple Computerbooks presents the basics of computer electronics and explains how a microprocessor works. Various types of PROMs, static RAMs, dynamic RAMs, floppy disks, and hard disks are considered, along with microprocessor support devices made by Intel, Motorola and Zilog. Bit slice logic and some AMD bit slice products are also described. Comprised of 14 chapters, this book begins with an introduction to the fundamentals of hardware design, followed by a discussion on the basic building blocks of hardware (NAND, NOR, AND, OR, NOT, XOR); tools and equipment that

  10. Singular perturbation of simple eigenvalues

    International Nuclear Information System (INIS)

    Greenlee, W.M.

    1976-01-01

    Two operator theoretic theorems which generalize those of asymptotic regular perturbation theory and which apply to singular perturbation problems are proved. Application of these theorems to concrete problems is involved, but the perturbation expansions for eigenvalues and eigenvectors are developed in terms of solutions of linear operator equations. The method of correctors, as well as traditional boundary layer techniques, can be used to apply these theorems. The current formulation should be applicable to highly singular ''hard core'' potential perturbations of the radial equation of quantum mechanics. The theorems are applied to a comparatively simple model problem whose analysis is basic to that of the quantum mechanical problem

  11. Simple Simulations of DNA Condensation

    Energy Technology Data Exchange (ETDEWEB)

    STEVENS,MARK J.

    2000-07-12

    Molecular dynamics simulations of a simple, bead-spring model of semiflexible polyelectrolytes such as DNA are performed. All charges are explicitly treated. Starting from extended, noncondensed conformations, condensed structures form in the simulations with tetravalent or trivalent counterions. No condensates form or are stable for divalent counterions. The mechanism by which condensates form is described. Briefly, condensation occurs because electrostatic interactions dominate entropy, and the favored Coulombic structure is a charge ordered state. Condensation is a generic phenomena and occurs for a variety of polyelectrolyte parameters. Toroids and rods are the condensate structures. Toroids form preferentially when the molecular stiffness is sufficiently strong.

  12. Wrist arthrography: a simple method

    Energy Technology Data Exchange (ETDEWEB)

    Berna-Serna, Juan D.; Reus, Manuel; Alonso, Jose [Virgen de la Arrixaca University Hospital, Department of Radiology, El Palmar (Murcia) (Spain); Martinez, Francisco; Domenech-Ratto, Gines [University of Murcia, Department of Human Anatomy, Faculty of Medicine, Murcia (Spain)

    2006-02-01

    A technique of wrist arthrography is presented using an adhesive marker-plate with radiopaque coordinates to identify precisely sites for puncture arthrography of the wrist and to obviate the need for fluoroscopic guidance. Radiocarpal joint arthrography was performed successfully in all 24 cases, 14 in the cadaveric wrists and 10 in the live patients. The arthrographic procedure described in this study is simple, safe, and rapid, and has the advantage of precise localisation of the site for puncture without need for fluoroscopic guidance. (orig.)

  13. Windows Phone 7 Made Simple

    CERN Document Server

    Trautschold, Martin

    2011-01-01

    With Windows Phone 7, Microsoft has created a completely new smartphone operating system that focuses on allowing users to be productive with their smartphone in new ways, while offering seamless integration and use of Microsoft Office Mobile as well as other productivity apps available in the Microsoft App Store. Windows Phone 7 Made Simple offers a clear, visual, step-by-step approach to using your Windows Phone 7 smartphone, no matter what the manufacturer. Author Jon Westfall is an expert in mobile devices, recognized by Microsoft as a "Most Valuable Professional" with experience

  14. 77 FR 33740 - Announcement of Requirements and Registration for “Health Data Platform Simple Sign-On Challenge”

    Science.gov (United States)

    2012-06-07

    ... creativity of entrepreneurs and productivity of developers. The ``Health Data Platform Simple Sign-On... interacting across multiple HDP technology components, making it easier for community collaborators to...

  15. iPad Made Simple

    CERN Document Server

    Trautschold, Martin; Learning, MSL Made Simple

    2010-01-01

    The new iPad is sleek, powerful, and most importantly, it's much more than just a big iPhone. Your iPad is can be used for reading, surfing the web, emailing, watching TV/Movies, getting work done, and much more. And with the upcoming wave of iPad apps, the possibilities are endless. iPad X Made Simple clarifies all of the key features on the iPad, introduces what's new, and also reveals dozens of time-saving shortcuts and techniques. The book has over 1,000 screen shots that are carefully annotated with step-by-step instructions. * Clear instructions on how to set up and use the iPad * Illust

  16. Methadone radioimmunoassay: two simple methods

    International Nuclear Information System (INIS)

    Robinson, K.; Smith, R.N.

    1983-01-01

    Two simple and economical radioimmunoassays for methadone in blood or urine are described. Haemolysis, decomposition, common anticoagulants and sodium fluoride do not affect the results. One assay used commercially-available [1- 3 H](-)-methadone hydrobromide as the label, while the other uses a radioiodinated conjugate of 4-dimethylamino-2,2-diphenylpentanoic acid and L-tyrosine methyl ester. A commercially-available antiserum is used in both assays. Normethadone and α-methadol cross-react to a small extent with the antiserum while methadone metabolites, dextropropoxyphene, dipipanone and phenadoxone have negligible cross-reactivities. The 'cut-offs' of the two assays as described are 30 and 33 ng ml -1 for blood, and 24 and 21 ng ml -1 for urine. The assay using the radioiodinated conjugate can be made more sensitive if required by increasing the specific activity of the label. (author)

  17. Simple types of anisotropic inflation

    International Nuclear Information System (INIS)

    Barrow, John D.; Hervik, Sigbjoern

    2010-01-01

    We display some simple cosmological solutions of gravity theories with quadratic Ricci curvature terms added to the Einstein-Hilbert Lagrangian which exhibit anisotropic inflation. The Hubble expansion rates are constant and unequal in three orthogonal directions. We describe the evolution of the simplest of these homogeneous and anisotropic cosmological models from its natural initial state and evaluate the deviations they will create from statistical isotropy in the fluctuations produced during a period of anisotropic inflation. The anisotropic inflation is not a late-time attractor in these models but the rate of approach to a final isotropic de Sitter state is slow and is conducive to the creation of observable anisotropic statistical effects in the microwave background. The statistical anisotropy would not be scale invariant and the level of statistical anisotropy will grow with scale.

  18. Semantic markup of sensor capabilities: how simple it too simple?

    Science.gov (United States)

    Rueda-Velasquez, C. A.; Janowicz, K.; Fredericks, J.

    2016-12-01

    Semantics plays a key role for the publication, retrieval, integration, and reuse of observational data across the geosciences. In most cases, one can safely assume that the providers of such data, e.g., individual scientists, understand the observation context in which their data are collected,e.g., the used observation procedure, the sampling strategy, the feature of interest being studied, and so forth. However, can we expect that the same is true for the technical details of the used sensors and especially the nuanced changes that can impact observations in often unpredictable ways? Should the burden of annotating the sensor capabilities, firmware, operation ranges, and so forth be really part of a scientist's responsibility? Ideally, semantic annotations should be provided by the parties that understand these details and have a vested interest in maintaining these data. With manufactures providing semantically-enabled metadata for their sensors and instruments, observations could more easily be annotated and thereby enriched using this information. Unfortunately, today's sensor ontologies and tool chains developed for the Semantic Web community require expertise beyond the knowledge and interest of most manufacturers. Consequently, knowledge engineers need to better understand the sweet spot between simple ontologies/vocabularies and sufficient expressivity as well as the tools required to enable manufacturers to share data about their sensors. Here, we report on the current results of EarthCube's X-Domes project that aims to address the questions outlined above.

  19. Flexible MEMS: A novel technology to fabricate flexible sensors and electronics

    Science.gov (United States)

    Tu, Hongen

    This dissertation presents the design and fabrication techniques used to fabricate flexible MEMS (Micro Electro Mechanical Systems) devices. MEMS devices and CMOS(Complementary Metal-Oxide-Semiconductor) circuits are traditionally fabricated on rigid substrates with inorganic semiconductor materials such as Silicon. However, it is highly desirable that functional elements like sensors, actuators or micro fluidic components to be fabricated on flexible substrates for a wide variety of applications. Due to the fact that flexible substrate is temperature sensitive, typically only low temperature materials, such as polymers, metals, and organic semiconductor materials, can be directly fabricated on flexible substrates. A novel technology based on XeF2(xenon difluoride) isotropic silicon etching and parylene conformal coating, which is able to monolithically incorporate high temperature materials and fluidic channels, was developed at Wayne State University. The technology was first implemented in the development of out-of-plane parylene microneedle arrays that can be individually addressed by integrated flexible micro-channels. These devices enable the delivery of chemicals with controlled temporal and spatial patterns and allow us to study neurotransmitter-based retinal prosthesis. The technology was further explored by adopting the conventional SOI-CMOS processes. High performance and high density CMOS circuits can be first fabricated on SOI wafers, and then be integrated into flexible substrates. Flexible p-channel MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) were successfully integrated and tested. Integration of pressure sensors and flow sensors based on single crystal silicon has also been demonstrated. A novel smart yarn technology that enables the invisible integration of sensors and electronics into fabrics has been developed. The most significant advantage of this technology is its post-MEMS and post-CMOS compatibility. Various high

  20. Launching of multi-project wafer runs in ePIXfab with micron-scale silicon rib waveguide technology

    Science.gov (United States)

    Aalto, Timo; Cherchi, Matteo; Harjanne, Mikko; Ylinen, Sami; Kapulainen, Markku; Vehmas, Tapani

    2014-03-01

    Silicon photonics is a rapidly growing R&D field where universities, institutes and companies are all involved and the business expectations for the next few years are high. One of the key enabling elements that led to the present success of silicon photonics is ePIXfab. It is a consortium of institutes that has together offered multi-project wafer (MPW) runs, packaging services, training, and feasibility studies. These services have significantly lowered the barrier of various research groups and companies to start developing silicon photonics. Until now the MPW services have been offered by the ePIXfab partners IMEC, CEA-Leti and IHP, which all use CMOS-type silicon photonics technology with a typical silicon-on-insulator (SOI) waveguide thickness of 220 nm. In November 2013 this MPW offering was expanded by the ePIXfab partner VTT that opened the access to its 3 μm SOI waveguide platform via ePIXfab MPW runs. This technology platform is complementary to the mainstream silicon photonics technology (220 nm) and it offers such benefits as very low losses, small polarization dependency, ultrabroadband operation and low starting costs

  1. Water nanoelectrolysis: A simple model

    Science.gov (United States)

    Olives, Juan; Hammadi, Zoubida; Morin, Roger; Lapena, Laurent

    2017-12-01

    A simple model of water nanoelectrolysis—defined as the nanolocalization at a single point of any electrolysis phenomenon—is presented. It is based on the electron tunneling assisted by the electric field through the thin film of water molecules (˜0.3 nm thick) at the surface of a tip-shaped nanoelectrode (micrometric to nanometric curvature radius at the apex). By applying, e.g., an electric potential V1 during a finite time t1, and then the potential -V1 during the same time t1, we show that there are three distinct regions in the plane (t1, V1): one for the nanolocalization (at the apex of the nanoelectrode) of the electrolysis oxidation reaction, the second one for the nanolocalization of the reduction reaction, and the third one for the nanolocalization of the production of bubbles. These parameters t1 and V1 completely control the time at which the electrolysis reaction (of oxidation or reduction) begins, the duration of this reaction, the electrolysis current intensity (i.e., the tunneling current), the number of produced O2 or H2 molecules, and the radius of the nanolocalized bubbles. The model is in good agreement with our experiments.

  2. Simple substrates for complex cognition

    Directory of Open Access Journals (Sweden)

    Peter Dayan

    2008-12-01

    Full Text Available Complex cognitive tasks present a range of computational and algorithmic challenges for neural accounts of both learning and inference. In particular, it is extremely hard to solve them using the sort of simple policies that have been extensively studied as solutions to elementary Markov decision problems. There has thus been recent interest in architectures for the instantiation and even learning of policies that are formally more complicated than these, involving operations such as gated working memory. However, the focus of these ideas and methods has largely been on what might best be considered as automatized, routine or, in the sense of animal conditioning, habitual, performance. Thus, they have yet to provide a route towards understanding the workings of rule-based control, which is critical for cognitively sophisticated competence. Here, we review a recent suggestion for a uniform architecture for habitual and rule-based execution, discuss some of the habitual mechanisms that underpin the use of rules, and consider a statistical relationship between rules and habits.

  3. Plunger with simple retention valve

    International Nuclear Information System (INIS)

    Fekete, A.V.

    1987-01-01

    This patent describes a positive displacement retention valve apparatus in which the actual flow equals the theoretical maximum flow through the retention valve. The apparatus includes, in combination, a confined fluid flow conduit, a piston adapted for reciprocal movement within the fluid flow conduit between upstream and downstream limit positions, piston reciprocating means, and pressure responsive check valve means located upstream with respect to the piston in the fluid flow conduit. The pressure responsive check valve means operable to permit fluid flow therethrough in a downstream direction toward the piston, and to preclude fluid flow therethrough in an opposite direction. The piston is composed of parts which are relatively movable with respect to one another. The piston includes a simple retention valve consisting of a plug means, a cylinder having a minimum and a maximum internal cross section flow area therein and being reciprocal within the confined fluid flow conduit, and a seat on the cylinder for the plug means. The piston reciprocating means are operatively connected to the plug means

  4. On the convex hull of the simple integer recourse objective function

    NARCIS (Netherlands)

    Klein Haneveld, Willem K.; Stougie, L.; van der Vlerk, Maarten H.

    1995-01-01

    We consider the objective function of a simple integer recourse problem with fixed technology matrix. Using properties of the expected value function, we prove a relation between the convex hull of this function and the expected value function of a continuous simple recourse program. We present an

  5. The Simple Analytics of the Environmental Kuznets Curve

    OpenAIRE

    James Andreoni; Arik Levinson

    1998-01-01

    Evidence suggests that some pollutants follow an inverse-U-shaped pattern relative to countries' incomes. This relationship has been called the out a simple and straight-forward static model of the microfoundations of the pollution-income relationship. We show that the environmental Kuznets curve can be derived directly from the technological link between consumption of a desired good and abatement of its undesirable byproduct. The inverse-U shape does not depend on the dynamics of growth, po...

  6. Simple light gas guns for hypervelocity studies

    International Nuclear Information System (INIS)

    Combs, S.K.; Haselton, H.H.; Milora, S.L.

    1990-01-01

    Two-stage light guns are used extensively in hypervelocity research. The applications of this technology include impact studies and special materials development. Oak Ridge National Laboratory (ORNL) has developed two-stage guns that accelerate small projectiles (4-mm nominal diameter) to velocities of up to ∼5 km/s. These guns are relatively small and simple (thus, easy to operate), allowing a significant number of test shots to be carried out and data accumulated in a short time. Materials that have been used for projectiles include plastics, frozen isotopes of hydrogen, and lithium hydride. One gun has been used to demonstrate repetitive operation at a rate of 0.7 Hz; and, with a few design improvements, it appears capable of performing at firing frequencies of 1--2 Hz. A schematic of ORNL two-stage device is shown below. Unlike most such devices, no rupture disks are used. Instead, a fast valve (high-flow type) initiates the acceleration process in the first stage. Projectiles can be loaded into the gun breech via the slide mechanism; this action has been automated which allows repetitive firing. Alternatively, the device is equipped with ''pipe gun'' apparatus in which gas can be frozen in situ in the gun barrel to form the projectile. This equipment operates with high reliability and is well suited for small-scale testing at high velocity. 17 refs., 6 figs., 2 tabs

  7. Two simple tools for industrial OR

    Directory of Open Access Journals (Sweden)

    K. Sandrock

    2003-12-01

    Full Text Available At the 1985 Annual Congress of the South African Production & Inventory Control Society it was pointed out that the productivity growth rate for South Africa is completely out of kilter with that for the western industrialised nations. The latter all display positive rates (some as high as that of Japan whereas the rate for South Africa is - NEGATIVE. Partly as a result of this situation, more and more attention is being given to quality control and reliability engineering by our industrialists in their attempts to improve productivity. This is going hand in hand with the introduction of better techniques and better use of the latest technology. We should also give attention to analytical tools that may be used in a simple inexpensive way to improve our methods of analysing industrial data, and in this way to improve our performance at little or no additional cost. To this end two tools are discussed. They are by means new. But it does seem as though they could be more widely applied in the industrial milieu.

  8. SSL - THE SIMPLE SOCKETS LIBRARY

    Science.gov (United States)

    Campbell, C. E.

    1994-01-01

    The Simple Sockets Library (SSL) allows C programmers to develop systems of cooperating programs using Berkeley streaming Sockets running under the TCP/IP protocol over Ethernet. The SSL provides a simple way to move information between programs running on the same or different machines and does so with little overhead. The SSL can create three types of Sockets: namely a server, a client, and an accept Socket. The SSL's Sockets are designed to be used in a fashion reminiscent of the use of FILE pointers so that a C programmer who is familiar with reading and writing files will immediately feel comfortable with reading and writing with Sockets. The SSL consists of three parts: the library, PortMaster, and utilities. The user of the SSL accesses it by linking programs to the SSL library. The PortMaster initializes connections between clients and servers. The PortMaster also supports a "firewall" facility to keep out socket requests from unapproved machines. The "firewall" is a file which contains Internet addresses for all approved machines. There are three utilities provided with the SSL. SKTDBG can be used to debug programs that make use of the SSL. SPMTABLE lists the servers and port numbers on requested machine(s). SRMSRVR tells the PortMaster to forcibly remove a server name from its list. The package also includes two example programs: multiskt.c, which makes multiple accepts on one server, and sktpoll.c, which repeatedly attempts to connect a client to some server at one second intervals. SSL is a machine independent library written in the C-language for computers connected via Ethernet using the TCP/IP protocol. It has been successfully compiled and implemented on a variety of platforms, including Sun series computers running SunOS, DEC VAX series computers running VMS, SGI computers running IRIX, DECstations running ULTRIX, DEC alpha AXPs running OSF/1, IBM RS/6000 computers running AIX, IBM PC and compatibles running BSD/386 UNIX and HP Apollo 3000

  9. Reconstructing Nearly Simple Polytopes from their Graph

    OpenAIRE

    Doolittle, Joseph

    2017-01-01

    We present a partial description of which polytopes are reconstructible from their graphs. This is an extension of work by Blind and Mani (1987) and Kalai (1988), which showed that simple polytopes can be reconstructed from their graphs. In particular, we introduce a notion of $h$-nearly simple and prove that 1-nearly simple and 2-nearly simple polytopes are reconstructible from their graphs. We also give an example of a 3-nearly simple polytope which is not reconstructible from its graph. Fu...

  10. The Impact of a 24 Month Housing First Intervention on Participants' Body Mass Index and Waist Circumference: Results from the At Home / Chez Soi Toronto Site Randomized Controlled Trial.

    Directory of Open Access Journals (Sweden)

    Julia Woodhall-Melnik

    Full Text Available Research suggests that individuals experiencing homelessness have high rates of overweight and obesity. Unhealthy weights and homelessness are both associated with increased risk of poor health and mortality. Using longitudinal data from 575 participants at the Toronto site of the At Home/Chez Soi randomized controlled trial, we investigate the impact of receiving a Housing First intervention on the Body Mass Index (BMI and waist circumference of participants with moderate and high needs for mental health support services. The ANCOVA results indicate that the intervention resulted in no significant change in BMI or waist circumference from baseline to 24 months. The findings suggest a need for a better understanding of factors contributing to overweight, obesity, and high waist circumference in populations who have histories of housing precarity and experience low-income in tandem with other concerns such as mental illness and addictions.International Standard Randomized Control Trial Number Register ISRCTN42520374.

  11. The Impact of a 24 Month Housing First Intervention on Participants' Body Mass Index and Waist Circumference: Results from the At Home / Chez Soi Toronto Site Randomized Controlled Trial.

    Science.gov (United States)

    Woodhall-Melnik, Julia; Misir, Vachan; Kaufman-Shriqui, Vered; O'Campo, Patricia; Stergiopoulos, Vicky; Hwang, Stephen

    2015-01-01

    Research suggests that individuals experiencing homelessness have high rates of overweight and obesity. Unhealthy weights and homelessness are both associated with increased risk of poor health and mortality. Using longitudinal data from 575 participants at the Toronto site of the At Home/Chez Soi randomized controlled trial, we investigate the impact of receiving a Housing First intervention on the Body Mass Index (BMI) and waist circumference of participants with moderate and high needs for mental health support services. The ANCOVA results indicate that the intervention resulted in no significant change in BMI or waist circumference from baseline to 24 months. The findings suggest a need for a better understanding of factors contributing to overweight, obesity, and high waist circumference in populations who have histories of housing precarity and experience low-income in tandem with other concerns such as mental illness and addictions. International Standard Randomized Control Trial Number Register ISRCTN42520374.

  12. Correcting slightly less simple movements

    Directory of Open Access Journals (Sweden)

    M.P. Aivar

    2005-01-01

    Full Text Available Many studies have analysed how goal directed movements are corrected in response to changes in the properties of the target. However, only simple movements to single targets have been used in those studies, so little is known about movement corrections under more complex situations. Evidence from studies that ask for movements to several targets in sequence suggests that whole sequences of movements are planned together. Planning related segments of a movement together makes it possible to optimise the whole sequence, but it means that some parts are planned quite long in advance, so that it is likely that they will have to be modified. In the present study we examined how people respond to changes that occur while they are moving to the first target of a sequence. Subjects moved a stylus across a digitising tablet. They moved from a specified starting point to two targets in succession. The first of these targets was always at the same position but it could have one of two sizes. The second target could be in one of two different positions and its size was different in each case. On some trials the first target changed size, and on some others the second target changed size and position, as soon as the subject started to move. When the size of the first target changed the subjects slowed down the first segment of their movements. Even the peak velocity, which was only about 150 ms after the change in size, was lower. Beside this fast response to the change itself, the dwell time at the first target was also affected: its duration increased after the change. Changing the size and position of the second target did not influence the first segment of the movement, but also increased the dwell time. The dwell time was much longer for a small target, irrespective of its initial size. If subjects knew in advance which target could change, they moved faster than if they did not know which could change. Taken together, these

  13. Advanced TEM Characterization for the Development of 28-14nm nodes based on fully-depleted Silicon-on-Insulator Technology

    International Nuclear Information System (INIS)

    Servanton, G; Clement, L; Lepinay, K; Lorut, F; Pantel, R; Pofelski, A; Bicais, N

    2013-01-01

    The growing demand for wireless multimedia applications (smartphones, tablets, digital cameras) requires the development of devices combining both high speed performances and low power consumption. A recent technological breakthrough making a good compromise between these two antagonist conditions has been proposed: the 28-14nm CMOS transistor generations based on a fully-depleted Silicon-on-Insulator (FD-SOI) performed on a thin Si film of 5-6nm. In this paper, we propose to review the TEM characterization challenges that are essential for the development of extremely power-efficient System on Chip (SoC)

  14. Simple Activities for Powerful Impact

    Science.gov (United States)

    LaConte, K.; Shupla, C. B.; Dusenbery, P.; Harold, J. B.; Holland, A.

    2016-12-01

    STEM education is having a transformational impact on libraries across the country. The STAR Library Education Network (STAR_Net) provides free Science-Technology Activities & Resources that are helping libraries to engage their communities in STEM learning experiences. Hear the results of a national 2015 survey of library and STEM professionals and learn what STEM programming is currently in place in public libraries and how libraries approach and implement STEM programs. Experience hands-on space science activities that are being used in library programs with multiple age groups. Through these hands-on activities, learners explore the nature of science and employ science and engineering practices, including developing and using models, planning and carrying out investigations, and engaging in argument from evidence (NGSS Lead States, 2013). Learn how STAR_Net can help you print (free!) mini-exhibits and educator guides. Join STAR_Net's online community and access STEM resources and webinars to work with libraries in your local community.

  15. Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

    International Nuclear Information System (INIS)

    Takagi, Shinichi; Tezuka, T.; Irisawa, T.; Nakaharai, S.; Maeda, T.; Numata, T.; Ikeda, K.; Sugiyama, N.

    2006-01-01

    Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review our recent results on high hole mobility p-MOSFETs using global/local SiGe or Ge channels. There are two directions for introducing SiGe or Ge channels into Si CMOS platform. One is to use SiGe or Ge global substrates and the other is to form SiGe or Ge-channel regions locally on Si wafers. In both cases, the Ge condensation technique, where Ge-channel layers are formed by oxidizing SiGe films on SOI substrates, are effectively utilized. As for the global technologies, ultrathin GOI substrates are prepared and used to fabricate high mobility GOI p-MOSFETs. As for the local technologies, SGOI or GOI channels are formed locally in the active area of p-MOSFETs on SOI wafers. It is shown that the hole mobility enhancement factor of as high as 10 is obtained in locally fabricated p-MOSFETs through the effects of high-Ge content and the compressive strain. Furthermore, the local Ge-channel technologies are combined with global SiGe or Ge substrates for pursuing the optimal and individual design of n-MOSFETs and p-MOSFETs on a single Si wafer. The CMOS device composed of strained-Si n-MOSFETs and SGOI p-MOSFETs is successfully integrated on a same wafer, which is a promising CMOS structure under deep sub 100 nm technology nodes

  16. An Arduino Investigation of Simple Harmonic Motion

    Science.gov (United States)

    Galeriu, Calin; Edwards, Scott; Esper, Geoffrey

    2014-03-01

    We cannot hope for a new generation of scientists and engineers if we don't let our young students take ownership of their scientific and engineering explorations, if we don't let them enjoy the hands-on cycle of design and production, and if we don't let them implant their creativity into a technologically friendly environment. With this educational philosophy in mind, Massimo Banzi and his team have developed and popularized the open source Arduino microcontroller board. The Arduino board has helped countless people in their science, electronics, robotics, or engineering projects, allowing them to build things that we have not even dreamed of. Physics instructors have also realized the advantages of using Arduino boards for lab experiments. The schools are saving money because the homemade experimental equipment is much cheaper than the commercial alternatives. The students are thankful for an educational experience that is more interesting, more loaded with STEM content, and more fun. As further proof of this new trend in physics education, Vernier5 is now documenting the use of their probes with Arduino boards. This is why we have developed an Arduino-based physics investigation of the simple harmonic motion (SHM) of a mass on a spring. The experimental data are collected with the help of an ultrasonic distance sensor and an Arduino Uno board. The data are then graphed and analyzed using Origin 9. This rich cross-curricular STEM activity integrates electronics, computer programming, physics, and mathematics in a way that is both experimentally exciting and intellectually rewarding.

  17. The Fluid Foil: The Seventh Simple Machine

    Science.gov (United States)

    Mitts, Charles R.

    2012-01-01

    A simple machine does one of two things: create a mechanical advantage (lever) or change the direction of an applied force (pulley). Fluid foils are unique among simple machines because they not only change the direction of an applied force (wheel and axle); they convert fluid energy into mechanical energy (wind and Kaplan turbines) or vice versa,…

  18. Simple utility functions with Giffen demand

    DEFF Research Database (Denmark)

    Sørensen, Peter Norman

    2007-01-01

    Simple utility functions with the Giffen property are presented: locally, the demand curve for a good is upward sloping. The utility functions represent continuous, monotone, convex preferences......Simple utility functions with the Giffen property are presented: locally, the demand curve for a good is upward sloping. The utility functions represent continuous, monotone, convex preferences...

  19. Falling balls and simple shearing strain

    International Nuclear Information System (INIS)

    Brun, J L; Pacheco, A F

    2006-01-01

    The problem of particles falling under gravity allows us to relate Hamiltonian mechanics to such different subjects as elasticity and fluid mechanics. It is with this in mind that mechanics gives us the opportunity of introducing, in a rather simple and unusual form, some concepts such as vorticity, the incompressibility condition or simple shear strain to physics students at the undergraduate level

  20. Simple clamped connection for bamboo truss systems

    NARCIS (Netherlands)

    Blok, R.

    2016-01-01

    “How to make fast and simple tension connections for truss systems?” The Solution: The innovation is a connection that uses only widely available base components (boltsand threaded steel bars) and simple hand tools to install it. With a handsaw and aspanner, the bamboo stems can be combined into to

  1. NVU perspective on simple liquids’ quasiuniversality

    DEFF Research Database (Denmark)

    Dyre, J. C.

    2013-01-01

    The last half-century of research into the structure, dynamics, and thermodynamics of simple liquids has revealed a number of approximate universalities. This paper argues that simple liquids' reduced-coordinate constant-potential-energy hypersurfaces constitute a quasiuniversal family of compact...

  2. A simple approach to nonlinear oscillators

    International Nuclear Information System (INIS)

    Ren Zhongfu; He Jihuan

    2009-01-01

    A very simple and effective approach to nonlinear oscillators is suggested. Anyone with basic knowledge of advanced calculus can apply the method to finding approximately the amplitude-frequency relationship of a nonlinear oscillator. Some examples are given to illustrate its extremely simple solution procedure and an acceptable accuracy of the obtained solutions.

  3. Sporadic simple groups and quotient singularities

    International Nuclear Information System (INIS)

    Cheltsov, I A; Shramov, C A

    2013-01-01

    We show that if a faithful irreducible representation of a central extension of a sporadic simple group with centre contained in the commutator subgroup gives rise to an exceptional (resp. weakly exceptional but not exceptional) quotient singularity, then that simple group is the Hall-Janko group (resp. the Suzuki group)

  4. FY 1999 New Sunshine Project survey research project - Survey on the long-term energy technology strategy, etc. Fundamental survey to decide on the industrial technology strategy - Technology strategy by field (Material technology field - Nonferrous metal field); 1999 nendo choki energy gijutsu senryaku nado ni kansuru chosa hokokusho. Sangyo gijutsu senryaku sakutei kiban chosa (bun'yabetsu gijutsu senryaku (zairyo gijutsu bun'ya (hitetsu kinzoku bun'ya)))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The survey/study were conducted to contribute to proposing technology strategies such as technical competitive force and the forecast in the material field, especially in the silicon wafer and compound semiconductor field. As to the silicon wafer technology, the following technologies were pointed out as those to be reinforced: future silicon crystals, mirror processing wafer, breakthrough technology needed for super LSI, heat-treated wafer, epitaxial wafer, SOI wafer, measuring/assessment technology, etc. In relation to the compound semiconductor technology, survey/study were made on the bulk crystal growth technology, epitaxial growth technology, crystal growth device technology, wafer processing technology, inspection/evaluation technology, device processing technology, etc. As the comprehensive strategy, the following were proposed: establishment of the place for industry/government/university cooperation, establishment of the center for evaluation of wafer materials/characteristics/process, and establishment of the compound semiconductor R and D center where men of practical business ability from industry/government/university get together and conduct the R and D of production technology and production facilities for compound semiconductor materials and devices. (NEDO)

  5. Simple model systems: a challenge for Alzheimer's disease

    Directory of Open Access Journals (Sweden)

    Di Carlo Marta

    2012-04-01

    Full Text Available Abstract The success of biomedical researches has led to improvement in human health and increased life expectancy. An unexpected consequence has been an increase of age-related diseases and, in particular, neurodegenerative diseases. These disorders are generally late onset and exhibit complex pathologies including memory loss, cognitive defects, movement disorders and death. Here, it is described as the use of simple animal models such as worms, fishes, flies, Ascidians and sea urchins, have facilitated the understanding of several biochemical mechanisms underlying Alzheimer's disease (AD, one of the most diffuse neurodegenerative pathologies. The discovery of specific genes and proteins associated with AD, and the development of new technologies for the production of transgenic animals, has helped researchers to overcome the lack of natural models. Moreover, simple model systems of AD have been utilized to obtain key information for evaluating potential therapeutic interventions and for testing efficacy of putative neuroprotective compounds.

  6. Development of a Cognitive Robotic System for Simple Surgical Tasks

    Directory of Open Access Journals (Sweden)

    Riccardo Muradore

    2015-04-01

    Full Text Available The introduction of robotic surgery within the operating rooms has significantly improved the quality of many surgical procedures. Recently, the research on medical robotic systems focused on increasing the level of autonomy in order to give them the possibility to carry out simple surgical actions autonomously. This paper reports on the development of technologies for introducing automation within the surgical workflow. The results have been obtained during the ongoing FP7 European funded project Intelligent Surgical Robotics (I-SUR. The main goal of the project is to demonstrate that autonomous robotic surgical systems can carry out simple surgical tasks effectively and without major intervention by surgeons. To fulfil this goal, we have developed innovative solutions (both in terms of technologies and algorithms for the following aspects: fabrication of soft organ models starting from CT images, surgical planning and execution of movement of robot arms in contact with a deformable environment, designing a surgical interface minimizing the cognitive load of the surgeon supervising the actions, intra-operative sensing and reasoning to detect normal transitions and unexpected events. All these technologies have been integrated using a component-based software architecture to control a novel robot designed to perform the surgical actions under study. In this work we provide an overview of our system and report on preliminary results of the automatic execution of needle insertion for the cryoablation of kidney tumours.

  7. A simple model for binary star evolution

    International Nuclear Information System (INIS)

    Whyte, C.A.; Eggleton, P.P.

    1985-01-01

    A simple model for calculating the evolution of binary stars is presented. Detailed stellar evolution calculations of stars undergoing mass and energy transfer at various rates are reported and used to identify the dominant physical processes which determine the type of evolution. These detailed calculations are used to calibrate the simple model and a comparison of calculations using the detailed stellar evolution equations and the simple model is made. Results of the evolution of a few binary systems are reported and compared with previously published calculations using normal stellar evolution programs. (author)

  8. Une genese du «parler de soi » du deja-la a l’evocation de l’absent dans l’activite dialogique du tout jeune enfant

    Directory of Open Access Journals (Sweden)

    Amina Bensalah

    2010-12-01

    Full Text Available

    L’analyse porte sur des productions langagières verbales et non-verbales les plus ordinaires entre des adultes et de très jeunes enfants âgés de moins de deux ans. En articulant les notions de l’évocation de l’absent et du déjà-là, notions qui mettent en avant le processus d’une «temporalité-spatialisée», je problématise la genèse d’un soi comme objet qui se donne à voir dans et par l’activité discursive. Mon hypothèse est que, s’agissant du tout jeune enfant qui ne peut donc s’auto-thématiser ni référer à lui-même de façon explicite, c’est bien dans l’évocation d’autrui et d’autres objets du monde qu’indirectement, il nous «parle» de lui. Trois éléments viennent étayer ma réfl exion pour répondre à la problématique posée : les notions de temporalité, de spatialité et d’affect. Elles sont clairement présentes dans les initiatives de demande, dans les mouvements des échanges et dans les séquences «pré-narratives» produites par l’enfant. Au vu des corpus, ces trois notions m’ont paru inséparables du lieu même où elles font ancrage, à savoir : l’interaction et le dialogue avec l’autre. L’approche adoptée dans l’analyse pour argumenter l’idée de l’expression d’un «parler de soi» chez le tout jeune enfant n’est pas tant, au sens strict, de type linguistique que de type pragmatique. Aussi, j’analyse les effets réciproques entre l’interaction et les échanges qui la modèlent.

  9. Lightning rod: a simple and low cost experiment for eletrostatics

    Directory of Open Access Journals (Sweden)

    Carlos Eduardo Laburú

    2008-09-01

    Full Text Available With the objective of contributing to make significant the scientific learning, this work suggests a simple and low-cost experiment to demonstrate electrostatics knowledge studied in High School. The experimental proposal has yet the concern of focusing the content, linking it to daily technological elements. Doing that, and due to the practical interest it can arouse in student, we presented the operation of an idealized Lightning Rod to apply in electrostatics school knowledge and to show that the same one can have an important day by day usefulness and it cannot be a turned off abstraction or distant from the reality.

  10. Communications technology handbook

    CERN Document Server

    Lewis, Geoff

    2013-01-01

    This is the first point of reference for the communications industries. It offers an introduction to a wide range of topics and concepts encountered in the field of communications technology. Whether you are looking for a simple explanation, or need to go into a subject in more depth, the Communications Technology Handbook provides all the information you need in one single volume.This second edition has been updated to include the latest technology including: Video on DemandWire-less Distribution systemsHigh spee

  11. Dynamics of unwinding of a simple entaglement

    NARCIS (Netherlands)

    Wiegel, F.W.; Michels, J.P.J.

    1987-01-01

    The dynamics of unwinding of a simple entanglement is studied in two ways, firstly using an optimal path approximation in the Rouse model and secondly by simulating the movement of a more realistic model using Brownian molecular dynamics

  12. A Simple Preparation Method for Diphosphoimidazole

    DEFF Research Database (Denmark)

    Rosenberg, T.

    1964-01-01

    A simple method for the preparation of diphosphoimidazole is presented that involves direct phosphorylation of imidazole by phosphorus oxychloride in alkaline aqueous solution. Details are given on the use of diphosphoimidazole in preparing sodium phosphoramidate and certain phosphorylated amino...

  13. simple and rapid spectrophotometric assay of levocetirizine

    African Journals Online (AJOL)

    Preferred Customer

    Simple, rapid, selective and fairly sensitive method is described for the ... Determination of small amounts of LCTZ in pharmaceutical preparations is important for .... sodium hydroxide and extraction of HCl-free-amine into chloroform followed ...

  14. Simple Perturbation Example for Quantum Chemistry.

    Science.gov (United States)

    Goodfriend, P. L.

    1985-01-01

    Presents a simple example that illustrates various aspects of the Rayleigh-Schrodinger perturbation theory. The example is a particularly good one because it is straightforward and can be compared with both the exact solution and with experimental data. (JN)

  15. The Invention Convention: Mind Meets Simple Machines.

    Science.gov (United States)

    Hadi-Tabassum, Samina

    1997-01-01

    Describes an Earth Day celebration where students had to design an invention made of simple machines that could crush an empty aluminum can through 10 rapid mechanical movements using materials foraged from the students' homes. (JRH)

  16. Simple and Clear Proofs of Stirling's Formula

    Science.gov (United States)

    Niizeki, Shozo; Araki, Makoto

    2010-01-01

    The purpose of our article is to show two simpler and clearer methods of proving Stirling's formula than the traditional and conventional ones. The distinction of our method is to use the simple trapezoidal formula.

  17. Low Cost, Simple, Intrauterine Insemination Procedure

    African Journals Online (AJOL)

    AJRH Managing Editor

    quite simple intrauterine insemination technique which may be performed in developing countries, without the need of sophisticated ... Cytoplasmic Sperm Injection (ICSI), are quite ... were administered only once by intramuscular injection ...

  18. Substoichiometric method in the simple radiometric analysis

    International Nuclear Information System (INIS)

    Ikeda, N.; Noguchi, K.

    1979-01-01

    The substoichiometric method is applied to simple radiometric analysis. Two methods - the standard reagent method and the standard sample method - are proposed. The validity of the principle of the methods is verified experimentally in the determination of silver by the precipitation method, or of zinc by the ion-exchange or solvent-extraction method. The proposed methods are simple and rapid compared with the conventional superstoichiometric method. (author)

  19. Simple versus complex degenerative mitral valve disease.

    Science.gov (United States)

    Javadikasgari, Hoda; Mihaljevic, Tomislav; Suri, Rakesh M; Svensson, Lars G; Navia, Jose L; Wang, Robert Z; Tappuni, Bassman; Lowry, Ashley M; McCurry, Kenneth R; Blackstone, Eugene H; Desai, Milind Y; Mick, Stephanie L; Gillinov, A Marc

    2018-07-01

    At a center where surgeons favor mitral valve (MV) repair for all subsets of leaflet prolapse, we compared results of patients undergoing repair for simple versus complex degenerative MV disease. From January 1985 to January 2016, 6153 patients underwent primary isolated MV repair for degenerative disease, 3101 patients underwent primary isolated MV repair for simple disease (posterior prolapse), and 3052 patients underwent primary isolated MV repair for complex disease (anterior or bileaflet prolapse), based on preoperative echocardiographic images. Logistic regression analysis was used to generate propensity scores for risk-adjusted comparisons (n = 2065 matched pairs). Durability was assessed by longitudinal recurrence of mitral regurgitation and reoperation. Compared with patients with simple disease, those undergoing repair of complex pathology were more likely to be younger and female (both P values < .0001) but with similar symptoms (P = .3). The most common repair technique was ring/band annuloplasty (3055/99% simple vs 3000/98% complex; P = .5), followed by leaflet resection (2802/90% simple vs 2249/74% complex; P < .0001). Among propensity-matched patients, recurrence of severe mitral regurgitation 10 years after repair was 6.2% for simple pathology versus 11% for complex pathology (P = .007), reoperation at 18 years was 6.3% for simple pathology versus 11% for complex pathology, and 20-year survival was 62% for simple pathology versus 61% for complex pathology (P = .6). Early surgical intervention has become more common in patients with degenerative MV disease, regardless of valve prolapse complexity or symptom status. Valve repair was associated with similarly low operative risk and time-related survival but less durability in complex disease. Lifelong annual echocardiographic surveillance after MV repair is recommended, particularly in patients with complex disease. Copyright © 2018 The American Association for Thoracic Surgery

  20. Infinitivo simple y compuesto con predicados declarativos

    OpenAIRE

    Rodríguez Espiñeira, María José

    2012-01-01

    Este trabajo se centra en las diferencias semánticas y sintácticas que presentan las construcciones de infinitivo simple y compuesto que actúan como objeto directo de predicados declarativos. El tema despierta interés por varios motivos: (1) Se trata de un subconjunto de verbos que subordinan infinitivos simples de un elenco restringido, pero que admiten regularmente infinitivos compuestos.

  1. Simple Lie algebras and Dynkin diagrams

    International Nuclear Information System (INIS)

    Buccella, F.

    1983-01-01

    The following theorem is studied: in a simple Lie algebra of rank p there are p positive roots such that all the other n-3p/2 positive roots are linear combinations of them with integer non negative coefficients. Dykin diagrams are built by representing the simple roots with circles and drawing a junction between the roots. Five exceptional algebras are studied, focusing on triple junction algebra, angular momentum algebra, weights of the representation, antisymmetric tensors, and subalgebras

  2. Signed Young Modules and Simple Specht Modules

    OpenAIRE

    Danz, Susanne; Lim, Kay Jin

    2015-01-01

    By a result of Hemmer, every simple Specht module of a finite symmetric group over a field of odd characteristic is a signed Young module. While Specht modules are parametrized by partitions, indecomposable signed Young modules are parametrized by certain pairs of partitions. The main result of this article establishes the signed Young module labels of simple Specht modules. Along the way we prove a number of results concerning indecomposable signed Young modules that are of independent inter...

  3. Simple Genome Editing of Rodent Intact Embryos by Electroporation.

    Directory of Open Access Journals (Sweden)

    Takehito Kaneko

    Full Text Available The clustered regularly interspaced short palindromic repeat (CRISPR/CRISPR-associated (Cas system is a powerful tool for genome editing in animals. Recently, new technology has been developed to genetically modify animals without using highly skilled techniques, such as pronuclear microinjection of endonucleases. Technique for animal knockout system by electroporation (TAKE method is a simple and effective technology that produces knockout rats by introducing endonuclease mRNAs into intact embryos using electroporation. Using TAKE method and CRISPR/Cas system, the present study successfully produced knockout and knock-in mice and rats. The mice and rats derived from embryos electroporated with Cas9 mRNA, gRNA and single-stranded oligodeoxynucleotide (ssODN comprised the edited targeted gene as a knockout (67% of mice and 88% of rats or knock-in (both 33%. The TAKE method could be widely used as a powerful tool to produce genetically modified animals by genome editing.

  4. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)

    Science.gov (United States)

    2014-01-01

    ring oscillator based temperature sensor will be designed to compensate for gain variations over temperature. For comparison to a competing solution...Simulated (Green) Capacitance of the GSG Pads ........................ 9 Figure 6: Die Picture and Schematic of the L-2L Coplanar Waveguides...complementary metal-oxide-semiconductor (CMOS) technology. A ring oscillator based temperature sensor was designed to compensate for gain variations

  5. Why to use mobile technology?

    OpenAIRE

    Bolat, Elvira

    2014-01-01

    No holistic portrayal exists to map and discuss values deriving from mobile technology use. This empirical paper addresses this gap. To address research purpose adapted grounded theory approach is applied to collect and analyse in-depth interviews with twenty-eight SME managers. This study concludes that mobile technology represents novel and unique category of technology. Whether MT is a simple mean to advanced communication with no physical boundaries of time and location or a business tool...

  6. Laser Technology.

    Science.gov (United States)

    Gauger, Robert

    1993-01-01

    Describes lasers and indicates that learning about laser technology and creating laser technology activities are among the teacher enhancement processes needed to strengthen technology education. (JOW)

  7. The Design of SimpleITK

    Directory of Open Access Journals (Sweden)

    Bradley Christopher Lowekamp

    2013-12-01

    Full Text Available SimpleITK is a new interface to the Insight Segmentation andRegistration Toolkit (ITK designed to facilitate rapid prototyping, educationand scientific activities, via high level programminglanguages. ITK is a templated C++ library of image processingalgorithms and frameworks for biomedical and other applications, andit was designed to be generic, flexible and extensible. Initially, ITKprovided a direct wrapping interface to languages such as Python andTcl through the WrapITK system. Unlike WrapITK, which exposed ITK'scomplex templated interface, SimpleITK was designed to provide an easyto use and simplified interface to ITK's algorithms. It includesprocedural methods, hides ITK's demand driven pipeline, and provides atemplate-less layer. Also SimpleITK provides practical conveniencessuch as binary distribution packages and overloaded operators. Ouruser-friendly design goals dictated a departure from the directinterface wrapping approach of WrapITK, towards a new facadeclass structure that only exposes the required functionality, hidingITK's extensive template use. Internally SimpleITK utilizes a manualdescription of each filter with code-generation and advanced C++meta-programming to provide the higher-level interface, bringing thecapabilities of ITK to a wider audience. SimpleITK is licensed asopen source software under the Apache License Version 2.0 and more informationabout downloading it can be found at http://www.simpleitk.org.

  8. Response of Simple, Model Systems to Extreme Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Ewing, Rodney C. [Univ. of Michigan, Ann Arbor, MI (United States); Lang, Maik [Univ. of Michigan, Ann Arbor, MI (United States)

    2015-07-30

    The focus of the research was on the application of high-pressure/high-temperature techniques, together with intense energetic ion beams, to the study of the behavior of simple oxide systems (e.g., SiO2, GeO2, CeO2, TiO2, HfO2, SnO2, ZnO and ZrO2) under extreme conditions. These simple stoichiometries provide unique model systems for the analysis of structural responses to pressure up to and above 1 Mbar, temperatures of up to several thousands of kelvin, and the extreme energy density generated by energetic heavy ions (tens of keV/atom). The investigations included systematic studies of radiation- and pressure-induced amorphization of high P-T polymorphs. By studying the response of simple stoichiometries that have multiple structural “outcomes”, we have established the basic knowledge required for the prediction of the response of more complex structures to extreme conditions. We especially focused on the amorphous state and characterized the different non-crystalline structure-types that result from the interplay of radiation and pressure. For such experiments, we made use of recent technological developments, such as the perforated diamond-anvil cell and in situ investigation using synchrotron x-ray sources. We have been particularly interested in using extreme pressures to alter the electronic structure of a solid prior to irradiation. We expected that the effects of modified band structure would be evident in the track structure and morphology, information which is much needed to describe theoretically the fundamental physics of track-formation. Finally, we investigated the behavior of different simple-oxide, composite nanomaterials (e.g., uncoated nanoparticles vs. core/shell systems) under coupled, extreme conditions. This provided insight into surface and boundary effects on phase stability under extreme conditions.

  9. Enhancing Learning Objectives by Use of Simple Virtual Microscopic Slides in Cellular Physiology and Histology: Impact and Attitudes

    Science.gov (United States)

    Anyanwu, Godson Emeka; Agu, Augustine Uchechukwu; Anyaehie, Ugochukwu Bond

    2012-01-01

    The impact and perception of students on the use of a simple, low technology-driven version of a virtual microscope in teaching and assessments in cellular physiology and histology were studied. Its impact on the time and resources of the faculty were also assessed. Simple virtual slides and conventional microscopes were used to conduct the same…

  10. A simple algorithm for measuring particle size distributions on an uneven background from TEM images

    DEFF Research Database (Denmark)

    Gontard, Lionel Cervera; Ozkaya, Dogan; Dunin-Borkowski, Rafal E.

    2011-01-01

    Nanoparticles have a wide range of applications in science and technology. Their sizes are often measured using transmission electron microscopy (TEM) or X-ray diffraction. Here, we describe a simple computer algorithm for measuring particle size distributions from TEM images in the presence of a...... application to images of heterogeneous catalysts is presented.......Nanoparticles have a wide range of applications in science and technology. Their sizes are often measured using transmission electron microscopy (TEM) or X-ray diffraction. Here, we describe a simple computer algorithm for measuring particle size distributions from TEM images in the presence...

  11. Vortex breakdown in simple pipe bends

    Science.gov (United States)

    Ault, Jesse; Shin, Sangwoo; Stone, Howard

    2016-11-01

    Pipe bends and elbows are one of the most common fluid mechanics elements that exists. However, despite their ubiquity and the extensive amount of research related to these common, simple geometries, unexpected complexities still remain. We show that for a range of geometries and flow conditions, these simple flows experience unexpected fluid dynamical bifurcations resembling the bubble-type vortex breakdown phenomenon. Specifically, we show with simulations and experiments that recirculation zones develop within the bends under certain conditions. As a consequence, fluid and particles can remain trapped within these structures for unexpectedly-long time scales. We also present simple techniques to mitigate this recirculation effect which can potentially have impact across industries ranging from biomedical and chemical processing to food and health sciences.

  12. TRSkit: A Simple Digital Library Toolkit

    Science.gov (United States)

    Nelson, Michael L.; Esler, Sandra L.

    1997-01-01

    This paper introduces TRSkit, a simple and effective toolkit for building digital libraries on the World Wide Web. The toolkit was developed for the creation of the Langley Technical Report Server and the NASA Technical Report Server, but is applicable to most simple distribution paradigms. TRSkit contains a handful of freely available software components designed to be run under the UNIX operating system and served via the World Wide Web. The intended customer is the person that must continuously and synchronously distribute anywhere from 100 - 100,000's of information units and does not have extensive resources to devote to the problem.

  13. Assessment of daylight quality in simple rooms

    DEFF Research Database (Denmark)

    Johnsen, Kjeld; Dubois, Marie-Claude; Sørensen, Karl Grau

    The present report documents the results of a study on daylight conditions in simple rooms of residential buildings. The overall objective of the study was to develop a basis for a method for the assessment of daylight quality in a room with simple geometry and window configurations. As a tool...... in daylighting conditions for a number of lighting parameters. The results gave clear indications of, for instance, which room would be the brightest, under which conditions might glare be a problem and which type of window would yield the greatest luminous variation (or visual interest), etc....

  14. Strong Bisimilarity of Simple Process Algebras

    DEFF Research Database (Denmark)

    Srba, Jirí

    2003-01-01

    We study bisimilarity and regularity problems of simple process algebras. In particular, we show PSPACE-hardness of the following problems: (i) strong bisimilarity of Basic Parallel Processes (BPP), (ii) strong bisimilarity of Basic Process Algebra (BPA), (iii) strong regularity of BPP, and (iv......) strong regularity of BPA. We also demonstrate NL-hardness of strong regularity problems for the normed subclasses of BPP and BPA. Bisimilarity problems of simple process algebras are introduced in a general framework of process rewrite systems, and a uniform description of the new techniques used...

  15. Simple gas chromatographic method for furfural analysis.

    Science.gov (United States)

    Gaspar, Elvira M S M; Lopes, João F

    2009-04-03

    A new, simple, gas chromatographic method was developed for the direct analysis of 5-hydroxymethylfurfural (5-HMF), 2-furfural (2-F) and 5-methylfurfural (5-MF) in liquid and water soluble foods, using direct immersion SPME coupled to GC-FID and/or GC-TOF-MS. The fiber (DVB/CAR/PDMS) conditions were optimized: pH effect, temperature, adsorption and desorption times. The method is simple and accurate (RSDfurfurals will contribute to characterise and quantify their presence in the human diet.

  16. A simple technique for laparoscopic gastrostomy.

    Science.gov (United States)

    Murphy, C; Rosemurgy, A S; Albrink, M H; Carey, L C

    1992-05-01

    While endoscopically placed gastrostomy tubes are routinely simple, they are not always feasible. Endoscopic technique also does not uniformly secure the tube to the abdominal wall, which presents possible complications, including leakage, accidental early tube removal, intraperitoneal catheter migration and necrosis of the stomach or abdominal wall because of excessive traction. Presented herein is a technique that is rapid, simple and eliminates some of these potential complications. The technique is easily combined with other operative procedures, such as tracheostomy, is done under direct vision, can be performed quickly with intravenous sedation and local anesthetic and is a safe method of tube placement for enteral feeding or gastric decompression.

  17. Simple 2-representations and Classification of Categorifications

    DEFF Research Database (Denmark)

    Agerholm, Troels

    We consider selfadjoint functors defined on categories of modules over finite dimensional algebras and classify those that satisfy some simple relations. In particular we classify self- adjoint idempotents and selfadjoint squareroots of a multiple of the identity functor. This is related to the t......We consider selfadjoint functors defined on categories of modules over finite dimensional algebras and classify those that satisfy some simple relations. In particular we classify self- adjoint idempotents and selfadjoint squareroots of a multiple of the identity functor. This is related...

  18. Molecular implementation of simple logic programs.

    Science.gov (United States)

    Ran, Tom; Kaplan, Shai; Shapiro, Ehud

    2009-10-01

    Autonomous programmable computing devices made of biomolecules could interact with a biological environment and be used in future biological and medical applications. Biomolecular implementations of finite automata and logic gates have already been developed. Here, we report an autonomous programmable molecular system based on the manipulation of DNA strands that is capable of performing simple logical deductions. Using molecular representations of facts such as Man(Socrates) and rules such as Mortal(X) logical deductions and delivers the result. This prototype is the first simple programming language with a molecular-scale implementation.

  19. Characterization of silicon-on-insulator wafers

    Science.gov (United States)

    Park, Ki Hoon

    The silicon-on-insulator (SOI) is attracting more interest as it is being used for an advanced complementary-metal-oxide-semiconductor (CMOS) and a base substrate for novel devices to overcome present obstacles in bulk Si scaling. Furthermore, SOI fabrication technology has improved greatly in recent years and industries produce high quality wafers with high yield. This dissertation investigated SOI material properties with simple, yet accurate methods. The electrical properties of as-grown wafers such as electron and hole mobilities, buried oxide (BOX) charges, interface trap densities, and carrier lifetimes were mainly studied. For this, various electrical measurement techniques were utilized such as pseudo-metal-oxide-semiconductor field-effect-transistor (PseudoMOSFET) static current-voltage (I-V) and transient drain current (I-t), Hall effect, and MOS capacitance-voltage/capacitance-time (C-V/C-t). The electrical characterization, however, mainly depends on the pseudo-MOSFET method, which takes advantage of the intrinsic SOI structure. From the static current-voltage and pulsed measurement, carrier mobilities, lifetimes and interface trap densities were extracted. During the course of this study, a pseudo-MOSFET drain current hysteresis regarding different gate voltage sweeping directions was discovered and the cause was revealed through systematic experiments and simulations. In addition to characterization of normal SOI, strain relaxation of strained silicon-on-insulator (sSOI) was also measured. As sSOI takes advantage of wafer bonding in its fabrication process, the tenacity of bonding between the sSOI and the BOX layer was investigated by means of thermal treatment and high dose energetic gamma-ray irradiation. It was found that the strain did not relax with processes more severe than standard CMOS processes, such as anneals at temperature as high as 1350 degree Celsius.

  20. Contraceptive technology.

    Science.gov (United States)

    Potts, M; Atkinson, L

    1984-06-01

    A question of the 1980s is how will contraceptive technology contribute to improving family planning services to meet the goal of making available a simple, safe, effective, and widely acceptable contraceptive method. Significant changes in existing technology in the 1970s resulted in safer and more effective contraceptive methods. Voluntary sterilization emerged as the primary method in developed and developing countries, as important modifications simplified the procedure for women. The tolerance and effectiveness of the IUD were improved by reducing its size, adding copper to its surface, or encapsulating progesterone within it. The steroid content of the birth control pill was reduced 10-fold, leading to fewer side effects, and the pill was found to be an effective postcoital contraceptive when taken at specific intervals. Vacuum aspiration for the termination of 1st trimester pregnancy proved to be 1 of the safest surgical techniques practiced. Belated attention is now being focused on adapting existing contraceptive methods for use during the postpartum period and breast feeding. The insertion of an IUD immediately following childbirth is a particularly useful option in the developing world as an increasing number of women have their babies in urban hospitals. A method of enhancing the contraceptive effect of breast feeding should neither change milk production nor transfer the drug to the nursing infant. Fortunately, progestin-only pills have been found to have no effect on breast milk and an attempt is being made to expand the use of this approved method. More simplification of female sterilization is needed. Current techniques require back-up facilities in case of complications and are unlikely to meet the developing world's enormous demand. 2 methods not widely used -- spermicides and periodic abstinence -- are coming under new scrutiny. In mid-1983 the US Food and Drug Administration approved a spermicide-impregnanated disposable sponge for over

  1. Simple Approach to Superamphiphobic Overhanging Silicon Nanostructures

    DEFF Research Database (Denmark)

    Kumar, Rajendra; Mogensen, Klaus Bo; Bøggild, Peter

    2010-01-01

    with contact angles up to 152 degrees and roll-off angle down to 8 degrees. Such nonlithographic nanoscale overhanging Structures can also be added to silicon nanograss by deposition of a thin SiO2 layer, which equips the silicon rods with 100-300 nm sized overhanging Structures. This is a simple, fast...

  2. Question Answering for Dutch : Simple does it

    NARCIS (Netherlands)

    Hoekstra, A.H.; Hiemstra, Djoerd; van der Vet, P.E.; Huibers, Theo W.C.; Schobbens, Pierre-Yves; Vanhoof, Wim; Schwanen, Gabriel

    2006-01-01

    When people pose questions in natural language to search for information on the web, the role of question answering (QA) systems becomes important. In this paper the QAsystem simpleQA, capable of answering Dutch questions on which the answer is a person or a location, is described. The system's

  3. Nature versus Nurture: The Simple Contrast

    Science.gov (United States)

    Davidoff, Jules; Goldstein, Julie; Roberson, Debi

    2009-01-01

    We respond to the commentary of Franklin, Wright, and Davies ("Journal of Experimental Child Psychology, 102", 239-245 [2009]) by returning to the simple contrast between nature and nurture. We find no evidence from the toddler data that makes us revise our ideas that color categories are learned and never innate. (Contains 1 figure.)

  4. Simple picture of the annihilation process

    International Nuclear Information System (INIS)

    Gotsman, E.; Nussinov, S.

    1980-01-01

    We propose a simple geometrical picture for B-barB annihilations, which is motivated by the electric-flux-tube model and is consistent with the quark-rearrangement model, as well as the nonplanar multiperipheral quark-exchange model. Within its framework we are able to explain all the salient features of the experimental annihilation data

  5. Simple Analysis of Historical Lime Mortars

    Science.gov (United States)

    Pires, Joa~o

    2015-01-01

    A laboratory experiment is described in which a simple characterization of a historical lime mortar is made by the determination of its approximate composition by a gravimetric method. Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) are also used for the qualitative characterization of the lime mortar components. These…

  6. Seismic Safety Of Simple Masonry Buildings

    International Nuclear Information System (INIS)

    Guadagnuolo, Mariateresa; Faella, Giuseppe

    2008-01-01

    Several masonry buildings comply with the rules for simple buildings provided by seismic codes. For these buildings explicit safety verifications are not compulsory if specific code rules are fulfilled. In fact it is assumed that their fulfilment ensures a suitable seismic behaviour of buildings and thus adequate safety under earthquakes. Italian and European seismic codes differ in the requirements for simple masonry buildings, mostly concerning the building typology, the building geometry and the acceleration at site. Obviously, a wide percentage of buildings assumed simple by codes should satisfy the numerical safety verification, so that no confusion and uncertainty have to be given rise to designers who must use the codes. This paper aims at evaluating the seismic response of some simple unreinforced masonry buildings that comply with the provisions of the new Italian seismic code. Two-story buildings, having different geometry, are analysed and results from nonlinear static analyses performed by varying the acceleration at site are presented and discussed. Indications on the congruence between code rules and results of numerical analyses performed according to the code itself are supplied and, in this context, the obtained result can provide a contribution for improving the seismic code requirements

  7. Simple concurrent garbage collection almost without synchronization

    NARCIS (Netherlands)

    Hesselink, Wim H.; Lali, M.I.

    We present two simple mark and sweep algorithms, A and B, for concurrent garbage collection by a single collector running concurrently with a number of mutators that concurrently modify shared data. Both algorithms are based on the ideas of Ben-Ari's classical algorithm for on-the-fly garbage

  8. Bayesian decision theory : A simple toy problem

    NARCIS (Netherlands)

    van Erp, H.R.N.; Linger, R.O.; van Gelder, P.H.A.J.M.

    2016-01-01

    We give here a comparison of the expected outcome theory, the expected utility theory, and the Bayesian decision theory, by way of a simple numerical toy problem in which we look at the investment willingness to avert a high impact low probability event. It will be found that for this toy problem

  9. Low Cost, Simple, Intrauterine Insemination Procedure with ...

    African Journals Online (AJOL)

    During the last 30 years however, intrauterine insemination has evolved with the introduction of ovulation stimulating protocols and sperm preparation methods taken from assisted reproduction techniques. Costs have risen, but the success rate has not risen to the same extent. We have therefore developed a quite simple ...

  10. A rewriting view of simple typing

    NARCIS (Netherlands)

    Stump, A.; Zantema, H.; Kimmell, G.; El Haj Omar, R.

    2013-01-01

    This paper shows how a recently developed view of typing as small-step abstract reduction, due to Kuan, MacQueen, and Findler, can be used to recast the development of simple type theory from a rewriting perspective. We show how standard meta-theoretic results can be proved in a completely new way,

  11. Studying the Greenhouse Effect: A Simple Demonstration.

    Science.gov (United States)

    Papageorgiou, G.; Ouzounis, K.

    2000-01-01

    Studies the parameters involved in a presentation of the greenhouse effect and describes a simple demonstration of this effect. Required equipment includes a 100-120 watt lamp, a 250mL beaker, and a thermometer capable of recording 0-750 degrees Celsius together with a small amount of chloroform. (Author/SAH)

  12. Simple parametrization of nucleon form factors

    International Nuclear Information System (INIS)

    Kelly, J.J.

    2004-01-01

    This Brief Report provides simple parametrizations of the nucleon electromagnetic form factors using functions of Q 2 that are consistent with dimensional scaling at high Q 2 . Good fits require only four parameters each for G Ep , G Mp , and G Mn and only two for G En

  13. A Simple Sketch Symbolizing Self-Reliance

    Centers for Disease Control (CDC) Podcasts

    2017-02-16

    EID Managing Editor, Byron Breedlove, reads his cover art story, A Simple Sketch Symbolizing Self-Reliance.  Created: 2/16/2017 by National Center for Emerging and Zoonotic Infectious Diseases (NCEZID).   Date Released: 2/16/2017.

  14. Simple Cloud Chambers Using Gel Ice Packs

    Science.gov (United States)

    Kamata, Masahiro; Kubota, Miki

    2012-01-01

    Although cloud chambers are highly regarded as teaching aids for radiation education, school teachers have difficulty in using cloud chambers because they have to prepare dry ice or liquid nitrogen before the experiment. We developed a very simple and inexpensive cloud chamber that uses the contents of gel ice packs which can substitute for dry…

  15. A Study of Simple Diffraction Models

    DEFF Research Database (Denmark)

    Agerkvist, Finn

    In this paper two simple methods for cabinet edge diffraction are examined. Calculations with both models are compared with more sophisticated theoretical models and with measured data. The parameters involved are studied and their importance for normal loudspeaker box designs is examined....

  16. Variations on a Simple Dice Game

    Science.gov (United States)

    Heafner, Joe

    2018-01-01

    I begin my introductory astronomy course with a unit on critical thinking that focuses on, among other things, the differences between the "scientific method" as frequently presented in textbooks and actual scientific practice. One particular classroom activity uses a simple dice game to simulate observation of a natural phenomenon and…

  17. Tour of a Simple Trigonometry Problem

    Science.gov (United States)

    Poon, Kin-Keung

    2012-01-01

    This article focuses on a simple trigonometric problem that generates a strange phenomenon when different methods are applied to tackling it. A series of problem-solving activities are discussed, so that students can be alerted that the precision of diagrams is important when solving geometric problems. In addition, the problem-solving plan was…

  18. A rewriting view of simple typing

    NARCIS (Netherlands)

    Stump, A.; Zantema, H.; Kimmell, G.; El Haj Omar, R.

    2012-01-01

    This paper shows how a recently developed view of typing as small-step abstract reduction, due to Kuan, MacQueen, and Findler, can be used to recast the development of simple type theory from a rewriting perspective. We show how standard meta-theoretic results can be proved in a completely new way,

  19. A simple model for indentation creep

    Science.gov (United States)

    Ginder, Ryan S.; Nix, William D.; Pharr, George M.

    2018-03-01

    A simple model for indentation creep is developed that allows one to directly convert creep parameters measured in indentation tests to those observed in uniaxial tests through simple closed-form relationships. The model is based on the expansion of a spherical cavity in a power law creeping material modified to account for indentation loading in a manner similar to that developed by Johnson for elastic-plastic indentation (Johnson, 1970). Although only approximate in nature, the simple mathematical form of the new model makes it useful for general estimation purposes or in the development of other deformation models in which a simple closed-form expression for the indentation creep rate is desirable. Comparison to a more rigorous analysis which uses finite element simulation for numerical evaluation shows that the new model predicts uniaxial creep rates within a factor of 2.5, and usually much better than this, for materials creeping with stress exponents in the range 1 ≤ n ≤ 7. The predictive capabilities of the model are evaluated by comparing it to the more rigorous analysis and several sets of experimental data in which both the indentation and uniaxial creep behavior have been measured independently.

  20. Simple Calculation Programs for Biology Other Methods

    Indian Academy of Sciences (India)

    First page Back Continue Last page Overview Graphics. Simple Calculation Programs for Biology Other Methods. Hemolytic potency of drugs. Raghava et al., (1994) Biotechniques 17: 1148. FPMAP: methods for classification and identification of microorganisms 16SrRNA. graphical display of restriction and fragment map of ...