WorldWideScience

Sample records for simple 2-transistor touch

  1. Touch sensors based on planar liquid crystal-gated-organic field-effect transistors

    International Nuclear Information System (INIS)

    Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi; Lee, Sooyong; Nam, Sungho; Kim, Youngkyoo; Kim, Hwajeong; Lee, Joon-Hyung; Park, Soo-Young; Kang, Inn-Kyu

    2014-01-01

    We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 μm thick LC layer (4-cyano-4 ′ -pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 μl/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm 2 /Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V D ) and gate (V G ) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V D and V G . The best voltage combination was V D = −0.2 V and V G = −1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors

  2. Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack

    International Nuclear Information System (INIS)

    Park, Woojin; Yang, Jin Ho; Kang, Chang Goo; Lee, Young Gon; Hwang, Hyeon Jun; Kang, Soo Cheol; Lee, Sang Kyung; Lee, Byoung Hun; Cho, Chunhum; Lim, Sung Kwan; Lee, Sangchul; Hong, Woong-Ki

    2013-01-01

    A new touch sensor device has been demonstrated with molybdenum disulfide (MoS 2 ) field effect transistors stacked with a piezoelectric polymer, polyvinylidene fluoride–trifluoroethylene (PVDF–TrFE). The performance of two device stack structures, metal/PVDF–TrFE/MoS 2 (MPM) and metal/PVDF–TrFE/Al 2 O 3 /MoS 2 (MPAM), were compared as a function of the thickness of PVDF–TrFE and Al 2 O 3 . The sensitivity of the touch sensor has been improved by two orders of magnitude by reducing the charge scattering and enhancing the passivation effects using a thin Al 2 O 3 interfacial layer. Reliable switching behavior has been demonstrated up to 120 touch press cycles. (paper)

  3. Touch screens go optical

    DEFF Research Database (Denmark)

    Hanson, Steen Grüner; Jakobsen, Michael Linde; Pedersen, Henrik Chresten

    2012-01-01

    A simple optical implementation of a touch screen is made possible by disrupting the total internal reflection in a 2D waveguide.......A simple optical implementation of a touch screen is made possible by disrupting the total internal reflection in a 2D waveguide....

  4. Graphene Tribotronics for Electronic Skin and Touch Screen Applications.

    Science.gov (United States)

    Khan, Usman; Kim, Tae-Ho; Ryu, Hanjun; Seung, Wanchul; Kim, Sang-Woo

    2017-01-01

    Graphene tribotronics is introduced for touch-sensing applications such as electronic skins and touch screens. The devices are based on a coplanar coupling of triboelectrification and current transport in graphene transistors. The touch sensors are ultrasensitive, fast, and stable. Furthermore, they are transparent and flexible, and can spatially map touch stimuli such as movement of a ball, multi-touch, etc. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Simple Exact Algorithm for Transistor Sizing of Low-Power High-Speed Arithmetic Circuits

    Directory of Open Access Journals (Sweden)

    Tooraj Nikoubin

    2010-01-01

    Full Text Available A new transistor sizing algorithm, SEA (Simple Exact Algorithm, for optimizing low-power and high-speed arithmetic integrated circuits is proposed. In comparison with other transistor sizing algorithms, simplicity, accuracy, independency of order and initial sizing factors of transistors, and flexibility in choosing the optimization parameters such as power consumption, delay, Power-Delay Product (PDP, chip area or the combination of them are considered as the advantages of this new algorithm. More exhaustive rules of grouping transistors are the main trait of our algorithm. Hence, the SEA algorithm dominates some major transistor sizing metrics such as optimization rate, simulation speed, and reliability. According to approximate comparison of the SEA algorithm with MDE and ADC for a number of conventional full adder circuits, delay and PDP have been improved 55.01% and 57.92% on an average, respectively. By comparing the SEA and Chang's algorithm, 25.64% improvement in PDP and 33.16% improvement in delay have been achieved. All the simulations have been performed with 0.13 m technology based on the BSIM3v3 model using HSpice simulator software.

  6. Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

    KAUST Repository

    Hussain, Aftab M.; Sevilla, Galo T.; Rader, Kelly; Hussain, Muhammad Mustafa

    2013-01-01

    electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace

  7. Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

    KAUST Repository

    Hussain, Aftab M.

    2013-04-01

    Tungsten disulfide (WS2) is a layered transition metal dichalcogenide with a reported band gap of 1.8 eV in bulk and 1.32-1.4 eV in its thin film form. 2D atomic layers of metal dichalcogenides have shown changes in conductivity with applied electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace and then its transistor action with back gated device with room temperature field effect mobility of 0.1003 cm2/V-s using the Schottky barrier contact model. We also show the semiconducting behavior of this WS2 thin film which is more promising than thermally unstable organic materials for thin film transistor application. Our direct growth method on silicon oxide also holds interesting opportunities for macro-electronics applications. © 2013 IEEE.

  8. Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.

    Science.gov (United States)

    Chang, Yuan-Ming; Yang, Shih-Hsien; Lin, Che-Yi; Chen, Chang-Hung; Lien, Chen-Hsin; Jian, Wen-Bin; Ueno, Keiji; Suen, Yuen-Wuu; Tsukagoshi, Kazuhito; Lin, Yen-Fu

    2018-03-01

    Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe 2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe 2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe 2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe 2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe 2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe 2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Optical touch screen based on waveguide sensing

    DEFF Research Database (Denmark)

    Pedersen, Henrik Chresten; Jakobsen, Michael Linde; Hanson, Steen Grüner

    2011-01-01

    We disclose a simple, optical touch screen technique based on a planar injection molded polymer waveguide, a single laser, and a small linear detector array. The solution significantly reduces the complexity and cost as compared to existing optical touch technologies. Force detection of a touching...

  10. TOUCH INTERACTION WITH 3D GEOGRAPHICAL VISUALIZATION ON WEB: SELECTED TECHNOLOGICAL AND USER ISSUES

    Directory of Open Access Journals (Sweden)

    L. Herman

    2016-10-01

    Full Text Available The use of both 3D visualization and devices with touch displays is increasing. In this paper, we focused on the Web technologies for 3D visualization of spatial data and its interaction via touch screen gestures. At the first stage, we compared the support of touch interaction in selected JavaScript libraries on different hardware (desktop PCs with touch screens, tablets, and smartphones and software platforms. Afterward, we realized simple empiric test (within-subject design, 6 participants, 2 simple tasks, LCD touch monitor Acer and digital terrain models as stimuli focusing on the ability of users to solve simple spatial tasks via touch screens. An in-house testing web tool was developed and used based on JavaScript, PHP, and X3DOM languages and Hammer.js libraries. The correctness of answers, speed of users’ performances, used gestures, and a simple gesture metric was recorded and analysed. Preliminary results revealed that the pan gesture is most frequently used by test participants and it is also supported by the majority of 3D libraries. Possible gesture metrics and future developments including the interpersonal differences are discussed in the conclusion.

  11. Logarithmic current-measuring transistor circuits

    DEFF Research Database (Denmark)

    Højberg, Kristian Søe

    1967-01-01

    Describes two transistorized circuits for the logarithmic measurement of small currents suitable for nuclear reactor instrumentation. The logarithmic element is applied in the feedback path of an amplifier, and only one dual transistor is used as logarithmic diode and temperature compensating...... transistor. A simple one-amplifier circuit is compared with a two-amplifier system. The circuits presented have been developed in connexion with an amplifier using a dual m.o.s. transistor input stage with diode-protected gates....

  12. Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors.

    Science.gov (United States)

    Yoo, Hocheon; Ghittorelli, Matteo; Smits, Edsger C P; Gelinck, Gerwin H; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

    2016-10-20

    Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics.

  13. The use of 2N3055 transistor as photosensory in solarymeter

    International Nuclear Information System (INIS)

    Bintoro; Sastroamidjojo, M.S.A.

    1981-01-01

    The characteristics of 2N3055 type transistor used for solarymeters sensor. It can be seen that transistor sensor has more response time. The response to against arrival solar intensity is linear. It can be used for solarymeter sensor after calibrated with pyranometer reference, but not so sensitive for 500 nanometer wavelength. It can be concluded that 2N3055 transistor made by Motrola than the made by R.C.A. because the 2N3055 transistor is more wide and more accurate than the R.C.A. transistor. (author tr.)

  14. Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors.

    Science.gov (United States)

    Valitova, Irina; Kumar, Prajwal; Meng, Xiang; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

    2016-06-15

    Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).

  15. ExTouch: Spatially-aware embodied manipulation of actuated objects mediated by augmented reality

    OpenAIRE

    Kasahara, Shunichi; Niiyama, Ryuma; Ishii, Hiroshi; Heun, Valentin Markus Josef

    2013-01-01

    As domestic robots and smart appliances become increasingly common, they require a simple, universal interface to control their motion. Such an interface must support a simple selection of a connected device, highlight its capabilities and allow for an intuitive manipulation. We propose "exTouch", an embodied spatially-aware approach to touch and control devices through an augmented reality mediated mobile interface. The "exTouch" system extends the users touchscreen interactions into the rea...

  16. Sencha Touch 2 mobile JavaScript framework

    CERN Document Server

    Clark, John Earl

    2013-01-01

    Full of explained code and enriched with screenshots, this book is the practical way to take your Sencha Touch skills to the next level.If you want to gain practical knowledge for using the Sencha Touch mobile web application framework, and you are familiar with HTML and CSS, then this book is for you. It is assumed that you know how to use touchscreens, touch events, and mobile devices such as Apple iOS and Google Android.

  17. Dual-mode operation of 2D material-base hot electron transistors

    KAUST Repository

    Lan, Yann-Wen; Jr., Carlos M. Torres,; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R.; Lerner, Mitchell B.; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L.

    2016-01-01

    Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V-CB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (V-CB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

  18. Dual-mode operation of 2D material-base hot electron transistors

    KAUST Repository

    Lan, Yann-Wen

    2016-09-01

    Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V-CB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (V-CB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

  19. Dual-mode operation of 2D material-base hot electron transistors.

    Science.gov (United States)

    Lan, Yann-Wen; Torres, Carlos M; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R; Lerner, Mitchell B; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L

    2016-09-01

    Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (VCB transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

  20. Improving the Stability of High-Performance Multilayer MoS2 Field-Effect Transistors.

    Science.gov (United States)

    Liu, Na; Baek, Jongyeol; Kim, Seung Min; Hong, Seongin; Hong, Young Ki; Kim, Yang Soo; Kim, Hyun-Suk; Kim, Sunkook; Park, Jozeph

    2017-12-13

    In this study, we propose a method for improving the stability of multilayer MoS 2 field-effect transistors (FETs) by O 2 plasma treatment and Al 2 O 3 passivation while sustaining the high performance of bulk MoS 2 FET. The MoS 2 FETs were exposed to O 2 plasma for 30 s before Al 2 O 3 encapsulation to achieve a relatively small hysteresis and high electrical performance. A MoO x layer formed during the plasma treatment was found between MoS 2 and the top passivation layer. The MoO x interlayer prevents the generation of excess electron carriers in the channel, owing to Al 2 O 3 passivation, thereby minimizing the shift in the threshold voltage (V th ) and increase of the off-current leakage. However, prolonged exposure of the MoS 2 surface to O 2 plasma (90 and 120 s) was found to introduce excess oxygen into the MoO x interlayer, leading to more pronounced hysteresis and a high off-current. The stable MoS 2 FETs were also subjected to gate-bias stress tests under different conditions. The MoS 2 transistors exhibited negligible decline in performance under positive bias stress, positive bias illumination stress, and negative bias stress, but large negative shifts in V th were observed under negative bias illumination stress, which is attributed to the presence of sulfur vacancies. This simple approach can be applied to other transition metal dichalcogenide materials to understand their FET properties and reliability, and the resulting high-performance hysteresis-free MoS 2 transistors are expected to open up new opportunities for the development of sophisticated electronic applications.

  1. Basic matrix algebra and transistor circuits

    CERN Document Server

    Zelinger, G

    1963-01-01

    Basic Matrix Algebra and Transistor Circuits deals with mastering the techniques of matrix algebra for application in transistors. This book attempts to unify fundamental subjects, such as matrix algebra, four-terminal network theory, transistor equivalent circuits, and pertinent design matters. Part I of this book focuses on basic matrix algebra of four-terminal networks, with descriptions of the different systems of matrices. This part also discusses both simple and complex network configurations and their associated transmission. This discussion is followed by the alternative methods of de

  2. A Modified Tactile Brush Algorithm for Complex Touch Gestures

    Energy Technology Data Exchange (ETDEWEB)

    Ragan, Eric [Texas A& M University

    2015-01-01

    Several researchers have investigated phantom tactile sensation (i.e., the perception of a nonexistent actuator between two real actuators) and apparent tactile motion (i.e., the perception of a moving actuator due to time delays between onsets of multiple actuations). Prior work has focused primarily on determining appropriate Durations of Stimulation (DOS) and Stimulus Onset Asynchronies (SOA) for simple touch gestures, such as a single finger stroke. To expand upon this knowledge, we investigated complex touch gestures involving multiple, simultaneous points of contact, such as a whole hand touching the arm. To implement complex touch gestures, we modified the Tactile Brush algorithm to support rectangular areas of tactile stimulation.

  3. Touch communicates distinct emotions.

    Science.gov (United States)

    Hertenstein, Matthew J; Keltner, Dacher; App, Betsy; Bulleit, Brittany A; Jaskolka, Ariane R

    2006-08-01

    The study of emotional signaling has focused almost exclusively on the face and voice. In 2 studies, the authors investigated whether people can identify emotions from the experience of being touched by a stranger on the arm (without seeing the touch). In the 3rd study, they investigated whether observers can identify emotions from watching someone being touched on the arm. Two kinds of evidence suggest that humans can communicate numerous emotions with touch. First, participants in the United States (Study 1) and Spain (Study 2) could decode anger, fear, disgust, love, gratitude, and sympathy via touch at much-better-than-chance levels. Second, fine-grained coding documented specific touch behaviors associated with different emotions. In Study 3, the authors provide evidence that participants can accurately decode distinct emotions by merely watching others communicate via touch. The findings are discussed in terms of their contributions to affective science and the evolution of altruism and cooperation. (c) 2006 APA, all rights reserved

  4. GelTouch

    DEFF Research Database (Denmark)

    Miruchna, Viktor; Walter, Robert; Lindlbauer, David

    2015-01-01

    We present GelTouch, a gel-based layer that can selectively transition between soft and stiff to provide tactile multi-touch feedback. It is flexible, transparent when not activated, and contains no mechanical, electromagnetic, or hydraulic components, resulting in a compact form factor (a 2mm thin...... touchscreen layer for our prototype). The activated areas can be morphed freely and continuously, without being limited to fixed, predefined shapes. GelTouch consists of a poly(N-isopropylacrylamide) gel layer which alters its viscoelasticity when activated by applying heat (>32 C). We present three different...

  5. Top-gated chemical vapor deposition grown graphene transistors with current saturation.

    Science.gov (United States)

    Bai, Jingwei; Liao, Lei; Zhou, Hailong; Cheng, Rui; Liu, Lixin; Huang, Yu; Duan, Xiangfeng

    2011-06-08

    Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO(2)) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 μm to 100 nm show that complete current saturation can be achieved in 5.6 μm devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO(2) gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 μS/μm reported in CVD graphene to date.

  6. Analysing organic transistors based on interface approximation

    International Nuclear Information System (INIS)

    Akiyama, Yuto; Mori, Takehiko

    2014-01-01

    Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic of organic transistors that the accumulation layer is concentrated on the first monolayer, and it is appropriate to consider interface charge rather than band bending. On the basis of this model, observed characteristics of hexamethylenetetrathiafulvalene (HMTTF) and dibenzotetrathiafulvalene (DBTTF) transistors with various surface treatments are analysed, and the trap distribution is extracted. In turn, starting from a simple exponential distribution, we can reproduce the temperature-dependent transistor characteristics as well as the gate voltage dependence of the activation energy, so we can investigate various aspects of organic transistors self-consistently under the interface approximation. Small deviation from such an ideal transistor operation is discussed assuming the presence of an energetically discrete trap level, which leads to a hump in the transfer characteristics. The contact resistance is estimated by measuring the transfer characteristics up to the linear region

  7. Learning from vision-to-touch is different than from touch-to-vision.

    Directory of Open Access Journals (Sweden)

    Dagmar A Wismeijer

    2012-11-01

    Full Text Available We studied whether vision can teach touch to the same extent as touch seems to teach vision. In a 2 x 2 between-participants learning study, we artificially correlated visual gloss cues with haptic compliance cues. In two "natural" tasks, we tested whether visual gloss estimations have an influence on haptic estimations of softness and vice versa. In two "new" tasks, in which participants were either asked to haptically judge glossiness or to visually judge softness, we investigated how perceptual estimates transfer from one sense to the other. Our results showed that vision does not teach touch as efficient as touch seems to teach vision.

  8. Nitrogen-doped graphene films from simple photochemical doping for n-type field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xinyu [College of Science, Guilin University of Technology, Guilin 541004 (China); Department of Physics and Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 (China); Tang, Tao; Li, Ming, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [College of Science, Guilin University of Technology, Guilin 541004 (China); He, Xiancong, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [School of Materials Science and Engineering, Nanjing Institute of Technology, Nanjing 211167 (China)

    2015-01-05

    Highly nitrogen-doped GO (NGO) and n-type graphene field effect transistor (FET) have been achieved by simple irradiation of graphene oxide (GO) thin films in NH{sub 3} atmosphere. The electrical properties of the NGO film were performed on electric field effect measurements, and it displays an n-type FET behavior with a charge neutral point (Dirac point) located at around −8 V. It is suggested that the amino-like nitrogen (N-A) mainly contributes to the n-type behavior. Furthermore, compared to the GO film irradiated in Ar atmosphere, the NGO film is much more capable to improve the electrical conductivity. It may attribute to nitrogen doping and oxygen reduction, both of which can effectively enhance the electrical conductivity.

  9. Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors

    KAUST Repository

    Tang, Hao-Ling

    2017-11-29

    Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness, which may be resolved by thickening the source and drain regions. Recently explored lateral graphene–MoS21−3 and graphene–WS21,4 heterostructures shed light on resolving the mentioned issues owing to their superior ohmic contact behaviors. However, recently reported field-effect transistors (FETs) based on graphene–TMD heterostructures have only shown n-type characteristics. The lack of p-type transistor limits their applications in complementary metal-oxide semiconductor electronics. In this work, we demonstrate p-type FETs based on graphene–WSe2 lateral heterojunctions grown with the scalable CVD technique. Few-layer WSe2 is overlapped with the multilayer graphene (MLG) at MLG–WSe2 junctions such that the contact resistance is reduced. Importantly, the few-layer WSe2 only forms at the junction region while the channel is still maintained as a WSe2 monolayer for transistor operation. Furthermore, by imposing doping to graphene S/D, 2 orders of magnitude enhancement in Ion/Ioff ratio to ∼108 and the unipolar p-type characteristics are obtained regardless of the work function of the metal in ambient air condition. The MLG is proposed to serve as a 2D version of emerging raised source/drain approach in electronics.

  10. Sencha Touch cookbook

    CERN Document Server

    Kumar, Ajit

    2013-01-01

    The book is written in a Cookbook style, presenting examples in the style of recipes, allowing you to go directly to your topic of interest or follow topics throughout a chapter to gain in-depth knowledge.Sencha Touch Cookbook (2nd edition) is great for developers who are new to Sencha Touch and who are looking to get a good hold on what the Sencha Touch framework offers and how to use it to build a great touch-based mobile application running on different platforms. It is assumed that you will have some experience in HTML, CSS, DOM, and JavaScript. To truly appreciate the framework capability

  11. Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates.

    Science.gov (United States)

    Dathbun, Ajjiporn; Kim, Youngchan; Kim, Seongchan; Yoo, Youngjae; Kang, Moon Sung; Lee, Changgu; Cho, Jeong Ho

    2017-05-10

    We demonstrated the fabrication of large-area ReS 2 transistors and logic gates composed of a chemical vapor deposition (CVD)-grown multilayer ReS 2 semiconductor channel and graphene electrodes. Single-layer graphene was used as the source/drain and coplanar gate electrodes. An ion gel with an ultrahigh capacitance effectively gated the ReS 2 channel at a low voltage, below 2 V, through a coplanar gate. The contact resistance of the ion gel-gated ReS 2 transistors with graphene electrodes decreased dramatically compared with the SiO 2 -devices prepared with Cr electrodes. The resulting transistors exhibited good device performances, including a maximum electron mobility of 0.9 cm 2 /(V s) and an on/off current ratio exceeding 10 4 . NMOS logic devices, such as NOT, NAND, and NOR gates, were assembled using the resulting transistors as a proof of concept demonstration of the applicability of the devices to complex logic circuits. The large-area synthesis of ReS 2 semiconductors and graphene electrodes and their applications in logic devices open up new opportunities for realizing future flexible electronics based on 2D nanomaterials.

  12. Development and Experimental Evaluation of an Automated Multi-Media Course on Transistors.

    Science.gov (United States)

    Whitted, J.H., Jr.; And Others

    A completely automated multi-media self-study program for teaching a portion of electronic solid-state fundamentals was developed. The subject matter areas included were fundamental theory of transistors, transistor amplifier fundamentals, and simple mathematical analysis of transistors including equivalent circuits, parameters, and characteristic…

  13. Learning from vision-to-touch is different than learning from touch-to-vision.

    Science.gov (United States)

    Wismeijer, Dagmar A; Gegenfurtner, Karl R; Drewing, Knut

    2012-01-01

    We studied whether vision can teach touch to the same extent as touch seems to teach vision. In a 2 × 2 between-participants learning study, we artificially correlated visual gloss cues with haptic compliance cues. In two "natural" tasks, we tested whether visual gloss estimations have an influence on haptic estimations of softness and vice versa. In two "novel" tasks, in which participants were either asked to haptically judge glossiness or to visually judge softness, we investigated how perceptual estimates transfer from one sense to the other. Our results showed that vision does not teach touch as efficient as touch seems to teach vision.

  14. Large-area WSe2 electric double layer transistors on a plastic substrate

    KAUST Repository

    Funahashi, Kazuma; Pu, Jiang; Li, Ming Yang; Li, Lain-Jong; Iwasa, Yoshihiro; Takenobu, Taishi

    2015-01-01

    Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.

  15. Large-area WSe2 electric double layer transistors on a plastic substrate

    KAUST Repository

    Funahashi, Kazuma

    2015-04-27

    Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.

  16. Visual, tangible, and touch-screen: Comparison of platforms for displaying simple graphics.

    Science.gov (United States)

    Gershon, Pnina; Klatzky, Roberta L; Palani, Hari; Giudice, Nicholas A

    2016-01-01

    Four different platforms were compared in a task of exploring an angular stimulus and reporting its value. The angle was explored visually, tangibly as raised fine-grit sandpaper, or on a touch-screen with a frictional or vibratory signal. All platforms produced highly accurate angle judgments. Differences were found, however, in exploration time, with vision fastest as expected, followed by tangible, vibration, and friction. Relative to the tangible display, touch-screens evidenced greater noise in the perceived angular value, with a particular disadvantage for friction. The latter must be interpreted in the context of a first-generation display and a rapidly advancing technology. On the whole, the results point both to promise and barriers in the use of refreshable graphical displays for blind users.

  17. Simulaci??n y modelado de transistores MOS de doble puerta

    OpenAIRE

    Cartujo Cassinello, Pedro

    2000-01-01

    En este trabajo se hace un estudio del transistor MOS de doble puerta analizando las posibles ventajas de esta nueva estructura frene al transistor convencional y el transistor MOS SOI de puerta simple. Para ello se ha analizado una secci??n transversal de un transistor MOS de doble puerta de canal N, con el fin de examinar detalladamente las peculiaridades de la distribuci??n de electrones con una amplia variedad de valores de todos los par??mentros tecnol??gicos y condiciones de operaci??n,...

  18. A Simple fMRI Compatible Robotic Stimulator to Study the Neural Mechanisms of Touch and Pain.

    Science.gov (United States)

    Riillo, F; Bagnato, C; Allievi, A G; Takagi, A; Fabrizi, L; Saggio, G; Arichi, T; Burdet, E

    2016-08-01

    This paper presents a simple device for the investigation of the human somatosensory system with functional magnetic imaging (fMRI). PC-controlled pneumatic actuation is employed to produce innocuous or noxious mechanical stimulation of the skin. Stimulation patterns are synchronized with fMRI and other relevant physiological measurements like electroencephalographic activity and vital physiological parameters. The system allows adjustable regulation of stimulation parameters and provides consistent patterns of stimulation. A validation experiment demonstrates that the system safely and reliably identifies clusters of functional activity in brain regions involved in the processing of pain. This new device is inexpensive, portable, easy-to-assemble and customizable to suit different experimental requirements. It provides robust and consistent somatosensory stimulation, which is of crucial importance to investigating the mechanisms of pain and its strong connection with the sense of touch.

  19. A touch of affect: mediated social touch and affect

    NARCIS (Netherlands)

    Huisman, Gijs

    2012-01-01

    This position paper outlines the first stages in an ongoing PhD project on mediated social touch, and the effects mediated touch can have on someone's affective state. It is argued that touch is a profound communication channel for humans, and that communication through touch can, to some extent,

  20. Touch Screen Tablets and Emergent Literacy

    Science.gov (United States)

    Neumann, Michelle M.; Neumann, David L.

    2014-01-01

    The use of touch screen tablets by young children is increasing in the home and in early childhood settings. The simple tactile interface and finger-based operating features of tablets may facilitate preschoolers' use of tablet application software and support their educational development in domains such as literacy. This article reviews…

  1. TouchTokens: Guiding Touch Patterns with Passive Tokens

    OpenAIRE

    Morales Gonzalez , Rafael; Appert , Caroline; Bailly , Gilles; Pietriga , Emmanuel

    2016-01-01

    International audience; TouchTokens make it possible to easily build interfaces that combine tangible and gestural input using passive tokens and a regular multi-touch surface. The tokens constrain users' grasp, and thus, the relative spatial configuration of fingers on the surface, theoretically making it possible to design algorithms that can recognize the resulting touch patterns. We performed a formative user study to collect and analyze touch patterns with tokens of varying shape and siz...

  2. High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

    KAUST Repository

    Torres, Carlos M.

    2015-12-09

    The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

  3. High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

    KAUST Repository

    Torres, Carlos M.; Lan, Yann Wen; Zeng, Caifu; Chen, Jyun Hong; Kou, Xufeng; Navabi, Aryan; Tang, Jianshi; Montazeri, Mohammad; Adleman, James R.; Lerner, Mitchell B.; Zhong, Yuan Liang; Li, Lain-Jong; Chen, Chii Dong; Wang, Kang L.

    2015-01-01

    The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

  4. Touch imprint cytology with massively parallel sequencing (TIC-seq): a simple and rapid method to snapshot genetic alterations in tumors.

    Science.gov (United States)

    Amemiya, Kenji; Hirotsu, Yosuke; Goto, Taichiro; Nakagomi, Hiroshi; Mochizuki, Hitoshi; Oyama, Toshio; Omata, Masao

    2016-12-01

    Identifying genetic alterations in tumors is critical for molecular targeting of therapy. In the clinical setting, formalin-fixed paraffin-embedded (FFPE) tissue is usually employed for genetic analysis. However, DNA extracted from FFPE tissue is often not suitable for analysis because of its low levels and poor quality. Additionally, FFPE sample preparation is time-consuming. To provide early treatment for cancer patients, a more rapid and robust method is required for precision medicine. We present a simple method for genetic analysis, called touch imprint cytology combined with massively paralleled sequencing (touch imprint cytology [TIC]-seq), to detect somatic mutations in tumors. We prepared FFPE tissues and TIC specimens from tumors in nine lung cancer patients and one patient with breast cancer. We found that the quality and quantity of TIC DNA was higher than that of FFPE DNA, which requires microdissection to enrich DNA from target tissues. Targeted sequencing using a next-generation sequencer obtained sufficient sequence data using TIC DNA. Most (92%) somatic mutations in lung primary tumors were found to be consistent between TIC and FFPE DNA. We also applied TIC DNA to primary and metastatic tumor tissues to analyze tumor heterogeneity in a breast cancer patient, and showed that common and distinct mutations among primary and metastatic sites could be classified into two distinct histological subtypes. TIC-seq is an alternative and feasible method to analyze genomic alterations in tumors by simply touching the cut surface of specimens to slides. © 2016 The Authors. Cancer Medicine published by John Wiley & Sons Ltd.

  5. VO2-based radiative thermal transistor with a semi-transparent base

    Science.gov (United States)

    Prod'homme, Hugo; Ordonez-Miranda, Jose; Ezzahri, Younès; Drévillon, Jérémie; Joulain, Karl

    2018-05-01

    We study a radiative thermal transistor analogous to an electronic one made of a VO2 base placed between two silica semi-infinite plates playing the roles of the transistor collector and emitter. The fact that VO2 exhibits an insulator to metal transition is exploited to modulate and/or amplify heat fluxes between the emitter and the collector, by applying a thermal current on the VO2 base. We extend the work of precedent studies considering the case where the base can be semi-transparent so that heat can be exchanged directly between the collector and the emitter. Both near and far field cases are considered leading to 4 typical regimes resulting from the fact that the emitter-base and base-collector separation distances can be larger or smaller than the thermal wavelength for a VO2 layer opaque or semi-transparent. Thermal currents variations with the base temperatures are calculated and analyzed. It is found that the transistor can operate in an amplification mode as already stated in [1] or in a switching mode as seen in [2]. An optimum configuration for the base thickness and separation distance maximizing the thermal transistor modulation factor is found.

  6. Touch Challenge ‘15: Recognizing Social Touch Gestures

    NARCIS (Netherlands)

    Jung, Merel Madeleine; Cang, Xi Laura; Poel, Mannes; MacLean, Karon E.

    2015-01-01

    Advances in the field of touch recognition could open up applications for touch-based interaction in areas such as Human-Robot Interaction (HRI). We extended this challenge to the research community working on multimodal interaction with the goal of sparking interest in the touch modality and to

  7. Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors.

    Science.gov (United States)

    Chen, Mikai; Wang, Yifan; Shepherd, Nathan; Huard, Chad; Zhou, Jiantao; Guo, L J; Lu, Wei; Liang, Xiaogan

    2017-01-24

    To construct reliable nanoelectronic devices based on emerging 2D layered semiconductors, we need to understand the charge-trapping processes in such devices. Additionally, the identified charge-trapping schemes in such layered materials could be further exploited to make multibit (or highly desirable analog-tunable) memory devices. Here, we present a study on the abnormal charge-trapping or memory characteristics of few-layer WSe 2 transistors. This work shows that multiple charge-trapping states with large extrema spacing, long retention time, and analog tunability can be excited in the transistors made from mechanically exfoliated few-layer WSe 2 flakes, whereas they cannot be generated in widely studied few-layer MoS 2 transistors. Such charge-trapping characteristics of WSe 2 transistors are attributed to the exfoliation-induced interlayer deformation on the cleaved surfaces of few-layer WSe 2 flakes, which can spontaneously form ambipolar charge-trapping sites. Our additional results from surface characterization, charge-retention characterization at different temperatures, and density functional theory computation strongly support this explanation. Furthermore, our research also demonstrates that the charge-trapping states excited in multiple transistors can be calibrated into consistent multibit data storage levels. This work advances the understanding of the charge memory mechanisms in layered semiconductors, and the observed charge-trapping states could be further studied for enabling ultralow-cost multibit analog memory devices.

  8. Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

    Science.gov (United States)

    Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

    2008-11-01

    In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

  9. The Virtual Midas Touch: Helping Behavior After a Mediated Social Touch.

    Science.gov (United States)

    Haans, A; Usselsteijn, W A

    2009-01-01

    A brief touch on the upper arm increases people's altruistic behavior and willingness to comply with a request. In this paper, we investigate whether this Midas touch phenomenon would also occur under mediated conditions (i.e., touching via an arm strap equipped with electromechanical actuators). Helping behavior was more frequently endorsed in the touch, compared to the no-touch condition, but this difference was not found to be statistically significant. However, a meta-analytical comparison with published research demonstrated that the strength of the virtual Midas touch is of the same magnitude as that of the Midas touch in unmediated situations. The present experiment, thus, provides empirical evidence that touch-like qualities can be attributed to electromechanical stimulation. This is important for the field of mediated social touch of which the design rationale is based on the assumption that mediated touch by means of tactile feedback technologies is processed in ways similar to real physical contact.

  10. Unijunction transistors

    International Nuclear Information System (INIS)

    1981-01-01

    The electrical characteristics of unijunction transistors can be modified by irradiation with electron beams in excess of 400 KeV and at a dose rate of 10 13 to 10 16 e/cm 2 . Examples are given of the effect of exposing the emitter-base junctions of transistors to such lattice defect causing radiation for a time sufficient to change the valley current of the transistor. (U.K.)

  11. Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

    Science.gov (United States)

    Yan, Xiao; Liu, Chunsen; Li, Chao; Bao, Wenzhong; Ding, Shijin; Zhang, David Wei; Zhou, Peng

    2017-09-01

    The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and can realize tunneling by electrostatic gating to avoid deprivation of band-edge sharpness resulting from chemical doping, which make them perfect candidates for tunneling field effect transistors. Here this study presents SnSe 2 /WSe 2 van der Waals heterostructures with SnSe 2 as the p-layer and WSe 2 as the n-layer. The energy band alignment changes from a staggered gap band offset (type-II) to a broken gap (type-III) when changing the negative back-gate voltage to positive, resulting in the device operating as a rectifier diode (rectification ratio ~10 4 ) or an n-type tunneling field effect transistor, respectively. A steep average subthreshold swing of 80 mV dec -1 for exceeding two decades of drain current with a minimum of 37 mV dec -1 at room temperature is observed, and an evident trend toward negative differential resistance is also accomplished for the tunneling field effect transistor due to the high gate efficiency of 0.36 for single gate devices. The I ON /I OFF ratio of the transfer characteristics is >10 6 , accompanying a high ON current >10 -5 A. This work presents original phenomena of multilayer 2D van der Waals heterostructures which can be applied to low-power consumption devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Thermal transistor utilizing gas-liquid transition

    KAUST Repository

    Komatsu, Teruhisa S.

    2011-01-25

    We propose a simple thermal transistor, a device to control heat current. In order to effectively change the current, we utilize the gas-liquid transition of the heat-conducting medium (fluid) because the gas region can act as a good thermal insulator. The three terminals of the transistor are located at both ends and the center of the system, and are put into contact with distinct heat baths. The key idea is a special arrangement of the three terminals. The temperature at one end (the gate temperature) is used as an input signal to control the heat current between the center (source, hot) and another end (drain, cold). Simulating the nanoscale systems of this transistor, control of heat current is demonstrated. The heat current is effectively cut off when the gate temperature is cold and it flows normally when it is hot. By using an extended version of this transistor, we also simulate a primitive application for an inverter. © 2011 American Physical Society.

  13. P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

    KAUST Repository

    Al-Jawhari, Hala A.

    2013-10-09

    P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.

  14. Simulación y modelado de transistores MOS de doble puerta

    OpenAIRE

    Cartujo Cassinello, Pedro

    2013-01-01

    En este trabajo se hace un estudio del transistor MOS de doble puerta analizando las posibles ventajas de esta nueva estructura frene al transistor convencional y el transistor MOS SOI de puerta simple. Para ello se ha analizado una sección transversal de un transistor MOS de doble puerta de canal N, con el fin de examinar detalladamente las peculiaridades de la distribución de electrones con una amplia variedad de valores de todos los parámentros tecnológicos y condiciones de operación, y se...

  15. Carbon nanotube transistors with graphene oxide films as gate dielectrics

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient condition.The exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.

  16. A simple wish: to touch a plasma ball

    CERN Multimedia

    CERN Bulletin

    2014-01-01

    On Wednesday 3 December, Plinio and Sofia, two young kids from Ticino, visited CERN accompanied by their parents. Organized by Make-A-Wish Switzerland – a foundation that grants wishes to children living with life-threatening conditions – the visit was the opportunity for Plinio to see his dream of touching a plasma ball come true.   Plinio, 6 years old, his sister Sofia, 11 years old, and their parents during their recent visit to CERN (top); back home (bottom) with Plinio's Make-A-Wish gift. (Photo credits: top: Make-A-Wish Foundation; bottom: provided by the family) Plinio, 6 years old, and Sofia, 11 years old, suffer from a rare disease known as Fanconi Anemia. On 3 December, they visited the Globe, the ATLAS visitor centre and the Microcosm. The whole family also enjoyed a special session of “Fun with Physics” presented by Dominique Bertola, from the CERN Education Group. Both kids showed their strong interest in CERN: Plinio surprised ...

  17. Copper atomic-scale transistors.

    Science.gov (United States)

    Xie, Fangqing; Kavalenka, Maryna N; Röger, Moritz; Albrecht, Daniel; Hölscher, Hendrik; Leuthold, Jürgen; Schimmel, Thomas

    2017-01-01

    We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO 4 + H 2 SO 4 ) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and -170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes ( U bias ) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1 G 0 ( G 0 = 2e 2 /h; with e being the electron charge, and h being Planck's constant) or 2 G 0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

  18. Gate Tunable Transport in Graphene/MoS2/(Cr/Au Vertical Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Ghazanfar Nazir

    2017-12-01

    Full Text Available Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS2/(Cr/Au vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electrode was made of monolayer graphene (Gr, the electrical transport in our Gr/MoS2/(Cr/Au vertical transistors can be significantly modified by using back-gate voltage. Schottky barrier height at the interface between Gr and MoS2 can be modified by back-gate voltage and the current bias. Vertical resistance (Rvert of a Gr/MoS2/(Cr/Au transistor is compared with planar resistance (Rplanar of a conventional lateral MoS2 field-effect transistor. We have also studied electrical properties for various thicknesses of MoS2 channels in both vertical and lateral transistors. As the thickness of MoS2 increases, Rvert increases, but Rplanar decreases. The increase of Rvert in the thicker MoS2 film is attributed to the interlayer resistance in the vertical direction. However, Rplanar shows a lower value for a thicker MoS2 film because of an excess of charge carriers available in upper layers connected directly to source/drain contacts that limits the conduction through layers closed to source/drain electrodes. Hence, interlayer resistance associated with these layers contributes to planer resistance in contrast to vertical devices in which all layers contribute interlayer resistance.

  19. ROSETTA lander Philae: Touch-down reconstruction

    Science.gov (United States)

    Roll, Reinhard; Witte, Lars

    2016-06-01

    The landing of the ROSETTA-mission lander Philae on November 12th 2014 on Comet 67 P/Churyumov-Gerasimenko was planned as a descent with passive landing and anchoring by harpoons at touch-down. Actually the lander was not fixed at touch-down to the ground due to failing harpoons. The lander internal damper was actuated at touch-down for 42.6 mm with a speed of 0.08 m/s while the lander touch-down speed was 1 m/s. The kinetic energy before touch-down was 50 J, 45 J were dissipated by the lander internal damper and by ground penetration at touch-down, and 5 J kinetic energy are left after touch-down (0.325 m/s speed). Most kinetic energy was dissipated by ground penetration (41 J) while only 4 J are dissipated by the lander internal damper. Based on these data, a value for a constant compressive soil-strength of between 1.55 kPa and 1.8 kPa is calculated. This paper focuses on the reconstruction of the touch-down at Agilkia over a period of around 20 s from first ground contact to lift-off again. After rebound Philae left a strange pattern on ground documented by the OSIRIS Narrow Angle Camera (NAC). The analysis shows, that the touch-down was not just a simple damped reflection on the surface. Instead the lander had repeated contacts with the surface over a period of about 20 s±10 s. This paper discusses scenarios for the reconstruction of the landing sequence based on the data available and on computer simulations. Simulations are performed with a dedicated mechanical multi-body model of the lander, which was validated previously in numerous ground tests. The SIMPACK simulation software was used, including the option to set forces at the feet to the ground. The outgoing velocity vector is mostly influenced by the timing of the ground contact of the different feet. It turns out that ground friction during damping has strong impact on the lander outgoing velocity, on its rotation, and on its nutation. After the end of damping, the attitude of the lander can be

  20. Social Touch Technology: A Survey of Haptic Technology for Social Touch

    NARCIS (Netherlands)

    Huisman, Gijs

    2017-01-01

    This survey provides an overview of work on haptic technology for social touch. Social touch has been studied extensively in psychology and neuroscience. With the development of new technologies, it is now possible to engage in social touch at a distance or engage in social touch with artificial

  1. Transistorized pulse amplifiers (A.I.T.); Amplificateurs d'impulsions a transistors (A.I.T.)

    Energy Technology Data Exchange (ETDEWEB)

    Feyt, J; Couly, J P [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1962-07-01

    The two amplifiers whose design and operation are described in this report have been studied for neutron detection units used in piles. They are designed to allow an important reduction of the volume and of the weight of the detector and its amplifier, and to simplify the operation of the detection assembly. To these characteristics can be added the mechanical and electrical robustness and the very reduced micro-phony. The first transistorized amplifier (AIT.1) is simple, very robust, and can be used for radioprotection installations. The second (AIT.4) has a better performance and makes it possible to replace the APT.2 in most of its applications (it has even been used satisfactorily in an apparatus where the micro-phony and the sensitivity to interference of the APT.2 made this latter unusable). (author) [French] Les deux amplificateurs dont ce rapport decrit la conception et le fonctionnement ont ete etudies pour les ensembles de detection des neutrons aupres des piles. Ils ont ete concus pour permettre une reduction importante du volume et du poids du detecteur et de son amplificateur, et pour simplifier le fonctionnement de l'ensemble de detection. A ces caracteristiques s'ajoutent une grande robustesse mecanique et electrique et une microphonie quasi nulle. Le premier amplificateur a transistors (AIT.1) simple, tres robuste, convient pour les installations de radioprotection. Le deuxieme (AIT.4) de performances plus elevees permet de remplacer l'APT.2 dans la plupart de ses applications (il a meme ete utilise avec satisfaction dans un montage ou la microphonie et la sensibilite aux parasites de l'APT.2 rendaient celui-ci inutilisable). (auteur)

  2. Reading the mind in the touch: Neurophysiological specificity in the communication of emotions by touch.

    Science.gov (United States)

    Kirsch, Louise P; Krahé, Charlotte; Blom, Nadia; Crucianelli, Laura; Moro, Valentina; Jenkinson, Paul M; Fotopoulou, Aikaterini

    2017-05-29

    Touch is central to interpersonal interactions. Touch conveys specific emotions about the touch provider, but it is not clear whether this is a purely socially learned function or whether it has neurophysiological specificity. In two experiments with healthy participants (N = 76 and 61) and one neuropsychological single case study, we investigated whether a type of touch characterised by peripheral and central neurophysiological specificity, namely the C tactile (CT) system, can communicate specific emotions and mental states. We examined the specificity of emotions elicited by touch delivered at CT-optimal (3cm/s) and CT-suboptimal (18cm/s) velocities (Experiment 1) at different body sites which contain (forearm) vs. do not contain (palm of the hand) CT fibres (Experiment 2). Blindfolded participants were touched without any contextual cues, and were asked to identify the touch provider's emotion and intention. Overall, CT-optimal touch (slow, gentle touch on the forearm) was significantly more likely than other types of touch to convey arousal, lust or desire. Affiliative emotions such as love and related intentions such as social support were instead reliably elicited by gentle touch, irrespective of CT-optimality, suggesting that other top-down factors contribute to these aspects of tactile social communication. To explore the neural basis of this communication, we also tested this paradigm in a stroke patient with right perisylvian damage, including the posterior insular cortex, which is considered as the primary cortical target of CT afferents, but excluding temporal cortex involvement that has been linked to more affiliative aspects of CT-optimal touch. His performance suggested an impairment in 'reading' emotions based on CT-optimal touch. Taken together, our results suggest that the CT system can add specificity to emotional and social communication, particularly with regards to feelings of desire and arousal. On the basis of these findings, we speculate

  3. touché is required for touch evoked generator potentials within vertebrate sensory neurons

    Science.gov (United States)

    Low, Sean E.; Ryan, Joel; Sprague, Shawn M.; Hirata, Hiromi; Cui, Wilson W.; Zhou, Weibin; Hume, Richard I.; Kuwada, John Y.; Saint-Amant, Louis

    2010-01-01

    The process by which light-touch in vertebrates is transformed into an electrical response in cutaneous mechanosensitive neurons is a largely unresolved question. To address this question we undertook a forward genetic screen in zebrafish (Danio rerio) to identify mutants exhibiting abnormal touch-evoked behaviors, despite the presence of sensory neurons and peripheral neurites. One family, subsequently named touché, was found to harbor a recessive mutation which produced offspring that were unresponsive to light-touch, but responded to a variety of other sensory stimuli. The optogenetic activation of motor behaviors by touché mutant sensory neurons expressing ChannelRhodopsin-2 suggested that the synaptic output of sensory neurons was intact, consistent with a defect in sensory neuron activation. To explore sensory neuron activation we developed an in vivo preparation permitting the precise placement of a combined electrical and tactile stimulating probe upon eGFP positive peripheral neurites. In wild type larva electrical and tactile stimulation of peripheral neurites produced action potentials detectable within the cell body. In a subset of these sensory neurons an underlying generator potential could be observed in response to subthreshold tactile stimuli. A closer examination revealed that the amplitude of the generator potential was proportional to the stimulus amplitude. When assayed touché mutant sensory neurons also responded to electrical stimulation of peripheral neurites similar to wild type larvae, however tactile stimulation of these neurites failed to uncover a subset of sensory neurons possessing generator potentials. These findings suggest that touché is required for generator potentials, and that generator potentials underlie responsiveness to light-touch in zebrafish. PMID:20631165

  4. Fully transparent thin-film transistor devices based on SnO2 nanowires.

    Science.gov (United States)

    Dattoli, Eric N; Wan, Qing; Guo, Wei; Chen, Yanbin; Pan, Xiaoqing; Lu, Wei

    2007-08-01

    We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates.

  5. Self Touch to Touch Others: Designing the Tactile Sleeve for Social Touch

    NARCIS (Netherlands)

    Huisman, G.; Darriba Frederiks, A.; van Dijk, B.; Kröse, B.; Heylen, D.

    2013-01-01

    In this paper we present the concept and initial design stages of the TaSST (Tactile Sleeve for Social Touch). The TaSST consists of a soft pressure-sensitive input layer, and an output layer containing vibration motors. A touch to ones own sleeve is felt as a vibration on the sleeve of another

  6. Self touch to touch others : designing the tactile sleeve for social touch

    NARCIS (Netherlands)

    Huisman, Gijs; Darriba Frederiks, Aduén; Heylen, Dirk; Van Dijk, Betsy; Kröse, Ben

    2013-01-01

    In this paper we present the concept and initial design stages of the TaSST (Tactile Sleeve for Social Touch). The TaSST consists of a soft pressure-sensitive input layer, and an output layer containing vibration motors. A touch to ones own sleeve is felt as a vibration on the sleeve of another

  7. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

  8. Transistor Effect in Improperly Connected Transistors.

    Science.gov (United States)

    Luzader, Stephen; Sanchez-Velasco, Eduardo

    1996-01-01

    Discusses the differences between the standard representation and a realistic representation of a transistor. Presents an experiment that helps clarify the explanation of the transistor effect and shows why transistors should be connected properly. (JRH)

  9. Flexible Textile-Based Organic Transistors Using Graphene/Ag Nanoparticle Electrode

    Science.gov (United States)

    Kim, Youn; Kwon, Yeon Ju; Lee, Kang Eun; Oh, Youngseok; Um, Moon-Kwang; Seong, Dong Gi; Lee, Jea Uk

    2016-01-01

    Highly flexible and electrically-conductive multifunctional textiles are desirable for use in wearable electronic applications. In this study, we fabricated multifunctional textile composites by vacuum filtration and wet-transfer of graphene oxide films on a flexible polyethylene terephthalate (PET) textile in association with embedding Ag nanoparticles (AgNPs) to improve the electrical conductivity. A flexible organic transistor can be developed by direct transfer of a dielectric/semiconducting double layer on the graphene/AgNP textile composite, where the textile composite was used as both flexible substrate and conductive gate electrode. The thermal treatment of a textile-based transistor enhanced the electrical performance (mobility = 7.2 cm2·V−1·s−1, on/off current ratio = 4 × 105, and threshold voltage = −1.1 V) due to the improvement of interfacial properties between the conductive textile electrode and the ion-gel dielectric layer. Furthermore, the textile transistors exhibited highly stable device performance under extended bending conditions (with a bending radius down to 3 mm and repeated tests over 1000 cycles). We believe that our simple methods for the fabrication of graphene/AgNP textile composite for use in textile-type transistors can potentially be applied to the development of flexible large-area electronic clothes. PMID:28335276

  10. On the choice of a head element for low-noise bipolar transistor amplifier

    International Nuclear Information System (INIS)

    Krasnokutskij, R.N.; Kurchaninov, L.L.; Fedyakin, N.N.; Shuvalov, R.S.

    1988-01-01

    The measurement results of equivalent noise charge (ENC) for KT382 transistor depending on detector capacity, formation duration and collector current are given. It is shown that the measurement results for this transistor in good agreement with calculations according to the noise model, time-consuming ENC measurements can be replaced by preliminary transistor rejection according to the distributed base resistance, current gain and simple calculations. In applications in the field of nuclear electronics the KT382 transistor enables to attain the same noise parameters as NE578, NE021 transistors (Japan) and it can be recommended for using as a head element of amplifiers

  11. Instant Sencha Touch

    CERN Document Server

    Dave, Hiren J

    2013-01-01

    Get to grips with a new technology, understand what it is and what it can do for you, and then get to work with the most important features and tasks. This book is a practical, step by step tutorial that will get you to use Sencha Touch core components quickly and efficiently.Instant Sencha Touch is for hobbyists who want to explore the capabilities of Sencha Touch. No prior knowledge of Sencha Touch is assumed. This book is simultaneously helpful for developers as well who want to quickly learn about Sencha Touch Framework. The book is structured in such a way that amateurs as well as experts

  12. A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.

    Science.gov (United States)

    Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

    2018-06-15

    Top-gated and bottom-gated transistors with multilayer MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on-off current ratio of 10 8 , high field-effect mobility of 10 2 cm 2 V -1 s -1 , and low subthreshold swing of 93 mV dec -1 . Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10 -3 -10 -2 V MV -1 cm -1 after 6 MV cm -1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 is a promising way to fabricate high-performance ML MoS 2 field-effect transistors for practical electron device applications.

  13. Bimanual Interaction with Interscopic Multi-Touch Surfaces

    Science.gov (United States)

    Schöning, Johannes; Steinicke, Frank; Krüger, Antonio; Hinrichs, Klaus; Valkov, Dimitar

    Multi-touch interaction has received considerable attention in the last few years, in particular for natural two-dimensional (2D) interaction. However, many application areas deal with three-dimensional (3D) data and require intuitive 3D interaction techniques therefore. Indeed, virtual reality (VR) systems provide sophisticated 3D user interface, but then lack efficient 2D interaction, and are therefore rarely adopted by ordinary users or even by experts. Since multi-touch interfaces represent a good trade-off between intuitive, constrained interaction on a touch surface providing tangible feedback, and unrestricted natural interaction without any instrumentation, they have the potential to form the foundation of the next generation user interface for 2D as well as 3D interaction. In particular, stereoscopic display of 3D data provides an additional depth cue, but until now the challenges and limitations for multi-touch interaction in this context have not been considered. In this paper we present new multi-touch paradigms and interactions that combine both traditional 2D interaction and novel 3D interaction on a touch surface to form a new class of multi-touch systems, which we refer to as interscopic multi-touch surfaces (iMUTS). We discuss iMUTS-based user interfaces that support interaction with 2D content displayed in monoscopic mode and 3D content usually displayed stereoscopically. In order to underline the potential of the proposed iMUTS setup, we have developed and evaluated two example interaction metaphors for different domains. First, we present intuitive navigation techniques for virtual 3D city models, and then we describe a natural metaphor for deforming volumetric datasets in a medical context.

  14. SOI Transistor measurement techniques using body contacted transistors

    International Nuclear Information System (INIS)

    Worley, E.R.; Williams, R.

    1989-01-01

    Measurements of body contacted SOI transistors are used to isolate parameters of the back channel and island edge transistor. Properties of the edge and back channel transistor have been measured before and after X-ray irradiation (ARACOR). The unique properties of the edge transistor are shown to be a result of edge geometry as confirmed by a two dimensional transistor simulator

  15. Individual SnO2 nanowire transistors fabricated by the gold microwire mask method

    International Nuclear Information System (INIS)

    Sun Jia; Tang Qingxin; Lu Aixia; Jiang Xuejiao; Wan Qing

    2009-01-01

    A gold microwire mask method is developed for the fabrication of transistors based on single lightly Sb-doped SnO 2 nanowires. Damage of the nanowire's surface can be avoided without any thermal annealing and surface modification, which is very convenient for the fundamental electrical and photoelectric characterization of one-dimensional inorganic nanomaterials. Transport measurements of the individual SnO 2 nanowire devices demonstrate the high-performance n-type field effect transistor characteristics without significant hysteresis in the transfer curves. The current on/off ratio and the subthreshold swing of the nanowire transistors are found to be 10 6 and 240 mV/decade, respectively.

  16. A TOUCH-SENSITIVE DEVICE

    DEFF Research Database (Denmark)

    2009-01-01

    The present invention relates to an optical touch-sensitive device and a method of determining a position and determining a position change of an object contacting an optical touch sensitive device. In particular, the present invention relates to an optical touch pad and a method of determining...... a position and determining a position change of an object contacting an optical touch pad. A touch-sensitive device, according to the present invention may comprise a light source, a touch- sensitive waveguide, a detector array, and a first light redirecting member, wherein at least a part of the light...... propagating towards a specific point of the detector array is prevented from being incident upon the specific point of the detector array when an object contacts a touch-sensitive surface of the touch-sensitive waveguide at a corresponding specific contact point....

  17. Transistor data book

    International Nuclear Information System (INIS)

    1988-03-01

    It introduces how to use this book. It lists transistor data and index, which are Type No, Cross index, Germanium PNP low power transistors, silicon NPN low power transistors, Germanium PNP high power transistors, Switching transistors, transistor arrays, Miscellaneous transistors, types with U.S military specifications, direct replacement transistors, suggested replacement transistors, schematic drawings, outline drawings, device number keys and manufacturer's logos.

  18. Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.

    Science.gov (United States)

    Gu, Weixia; Shen, Jiaoyan; Ma, Xiying

    2014-02-28

    Two-dimensional (2D) molybdenum disulfide (MoS2) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS2 nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS2 nanodiscs, fabricated via chemical vapor deposition (CVD), are homogeneous and continuous, and their thickness of around 5 nm is equal to a few layers of MoS2. In addition, we find that the MoS2 nanodisc-based back-gated field effect transistors with nickel electrodes achieve very high performance. The transistors exhibit an on/off current ratio of up to 1.9 × 105, and a maximum transconductance of up to 27 μS (5.4 μS/μm). Moreover, their mobility is as high as 368 cm2/Vs. Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate. The electrical properties of the MoS2 nanodisc transistors are better than or comparable to those values extracted from single and multilayer MoS2 FETs.

  19. Rutile TiO{sub 2} active-channel thin-film transistor using rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung-Jin; Heo, Kwan-Jun; Yoo, Su-Chang; Choi, Seong-Gon [Chungbuk National University, Cheongju (Korea, Republic of); Chang, Seung-Wook [Samsung Display, Co., Ltd., Suwon (Korea, Republic of)

    2014-10-15

    TiO{sub 2} active-channel thin-film transistors (TFTs), in which the bottom-gate top-contact architecture was prepared with atomic layer deposition grown TiO{sub 2} as the semiconducting layer, were fabricated and then investigated based on key process parameters, such as the rapid thermal annealing (RTA) temperature. Structural analyses suggested that TiO{sub 2} films annealed at temperatures above 500 .deg. C changed from an amorphous to a rutile phase. The TFT with a TiO{sub 2} semiconductor annealed at 600 .deg. C exhibited strongly-saturated output characteristics, a much higher on/off current ratio of 4.3 x 10{sup 5}, and an electron mobility of 0.014 cm{sup 2}/Vs. Moreover, the potential for manipulating TiO{sub 2}-based TFTs with RTA methodology was demonstrated through the realization of a simple resistive-load inverter.

  20. The virtual midas touch : helping behavior after a mediated social touch

    NARCIS (Netherlands)

    Haans, A.; IJsselsteijn, W.A.

    2009-01-01

    A brief touch on the upper arm increases people's altruistic behavior and willingness to comply with a request. In this paper, we investigate whether this Midas touch phenomenon would also occur under mediated conditions (i.e., touching via an arm strap equipped with electromechanical actuators).

  1. Characteristics of thin-film transistors based on silicon nitride passivation by excimer laser direct patterning

    International Nuclear Information System (INIS)

    Chen, Chao-Nan; Huang, Jung-Jie

    2013-01-01

    This study explored the removal of silicon nitride using KrF laser ablation technology with a high threshold fluence of 990 mJ/cm 2 . This technology was used for contact hole patterning to fabricate SiN x -passivation-based amorphous-silicon thin films in a transistor device. Compared to the photolithography process, laser direct patterning using KrF laser ablation technology can reduce the number of process steps by at least three. Experimental results showed that the mobility and threshold voltages of thin film transistors patterned using the laser process were 0.16 cm 2 /V-sec and 0.2 V, respectively. The device performance and the test results of gate voltage stress reliability demonstrated that laser direct patterning is a promising alternative to photolithography in the panel manufacturing of thin-film transistors for liquid crystal displays. - Highlights: ► KrF laser ablation technology is used to remove silicon nitride. ► A simple method for direct patterning contact-hole in thin-film-transistor device. ► Laser technology reduced processing by at least three steps

  2. Young Children Learning from Touch Screens: Taking a Wider View

    Directory of Open Access Journals (Sweden)

    Silvia Lovato

    2016-07-01

    Full Text Available Touch screen devices such as smartphones and tablets are now ubiquitous in the lives of American children. These devices permit very young children to engage interactively in an intuitive fashion with actions as simple as touching, swiping and pinching. Yet, we know little about the role these devices play in very young children’s lives or their impact on early learning and development. Here we focus on two areas in which existing research sheds some light on these issues with children under three years of age. The first measures transfer of learning, or how well children use information learned from screens to reason about events off-screen, using object retrieval and word learning tasks. The second measures the impact of interactive screens on parent-child interactions and story comprehension during reading time. More research is required to clarify the pedagogical potential and pitfalls of touch screens for infants and very young children, especially research focused on capabilities unique to touch screens and on the social and cultural contexts in which young children use them.

  3. Young Children Learning from Touch Screens: Taking a Wider View.

    Science.gov (United States)

    Lovato, Silvia B; Waxman, Sandra R

    2016-01-01

    Touch screen devices such as smartphones and tablets are now ubiquitous in the lives of American children. These devices permit very young children to engage interactively in an intuitive fashion with actions as simple as touching, swiping and pinching. Yet, we know little about the role these devices play in very young children's lives or their impact on early learning and development. Here we focus on two areas in which existing research sheds some light on these issues with children under 3 years of age. The first measures transfer of learning, or how well children use information learned from screens to reason about events off-screen, using object retrieval and word learning tasks. The second measures the impact of interactive screens on parent-child interactions and story comprehension during reading time. More research is required to clarify the pedagogical potential and pitfalls of touch screens for infants and very young children, especially research focused on capabilities unique to touch screens and on the social and cultural contexts in which young children use them.

  4. EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor

    Science.gov (United States)

    Demming, Anna

    2012-09-01

    Today the transistor is integral to the electronic circuitry that wires our lives. When Bardeen and Brattain first observed an amplified signal by connecting electrodes to a germanium crystal they saw that their 'semiconductor triode' could prove a useful alternative to the more cumbersome vacuum tubes used at the time [1]. But it was perhaps William Schottky who recognized the extent of the transistor's potential. A basic transistor has three or more terminals and current across one pair of terminals can switch or amplify current through another pair. Bardeen, Brattain and Schottky were jointly awarded a Nobel Prize in 1956 'for their researches on semiconductors and their discovery of the transistor effect' [2]. Since then many new forms of the transistor have been developed and understanding of the underlying properties is constantly advancing. In this issue Chen and Shih and colleagues at Taiwan National University and Drexel University report a pyroelectrics transistor. They show how a novel optothermal gating mechanism can modulate the current, allowing a range of developments in nanoscale optoelectronics and wireless devices [3]. The explosion of interest in nanoscale devices in the 1990s inspired electronics researchers to look for new systems that can act as transistors, such as carbon nanotube [4] and silicon nanowire [5] transistors. Generally these transistors function by raising and lowering an energy barrier of kBT -1, but researchers in the US and Canada have demonstrated that the quantum interference between two electronic pathways through aromatic molecules can also modulate the current flow [6]. The device has advantages for further miniaturization where energy dissipation in conventional systems may eventually cause complications. Interest in transistor technology has also led to advances in fabrication techniques for achieving high production quantities, such as printing [7]. Researchers in Florida in the US demonstrated field effect transistor

  5. Automatic recognition of touch gestures in the corpus of social touch

    NARCIS (Netherlands)

    Jung, Merel Madeleine; Poel, Mannes; Poppe, Ronald Walter; Heylen, Dirk K.J.

    For an artifact such as a robot or a virtual agent to respond appropriately to human social touch behavior, it should be able to automatically detect and recognize touch. This paper describes the data collection of CoST: Corpus of Social Touch, a data set containing 7805 captures of 14 different

  6. Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

    Science.gov (United States)

    Renteria, J.; Samnakay, R.; Rumyantsev, S. L.; Jiang, C.; Goli, P.; Shur, M. S.; Balandin, A. A.

    2014-04-01

    We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 2 × 1019 eV-1cm-3 and 2.5 × 1020 eV-1cm-3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.

  7. Virtual Touch

    DEFF Research Database (Denmark)

    Stenslie, Ståle

    The central focus of this thesis is the use and experience of touch in artistic, multimodal and computer-based environments. The haptic experience of touch is an area that has only received limited research-based interest. Touch is too often seen as the effect, and not the cause of our everyday...... experiences. The study aims to provide an improved knowledge of how touch functions and how haptic storytelling can be used as an artistic medium. This thesis is divided into seven parts. The introductory chapter presents the structure of the study and the history leading up the formulation of research...... questions and hypotheses. Further it contextualizes the research in a broader context. The second chapter presents my bricolage of methodological choices and puts them in relation to art, technology and aesthetics. Here the thesis is presented as practice-based research focused on my artistic experiment...

  8. Neutron Radiation Effect On 2N2222 And NTE 123 NPN Silicon Bipolar Junction Transistors

    International Nuclear Information System (INIS)

    Oo, Myo Min; Rashid, N K A Md; Hasbullah, N F; Karim, J Abdul; Zin, M R Mohamed

    2013-01-01

    This paper examines neutron radiation with PTS (Pneumatic Transfer System) effect on silicon NPN bipolar junction transistors (2N2222 and NTE 123) and analysis of the transistors in terms of electrical characterization such as current gain after neutron radiation. The key parameters are measured with Keithley 4200SCS. Experiment results show that the current gain degradation of the transistors is very sensitive to neutron radiation. The neutron radiation can cause displacement damage in the bulk layer of the transistor structure. The current degradation is believed to be governed by increasing recombination current between the base and emitter depletion region

  9. Advantages of combined touch screen technology and text hyperlink for the pathology grossing manual: a simple approach to access instructive information in biohazardous environments.

    Science.gov (United States)

    Qu, Zhenhong; Ghorbani, Rhonda P; Li, Hongyan; Hunter, Robert L; Hannah, Christina D

    2007-03-01

    Gross examination, encompassing description, dissection, and sampling, is a complex task and an essential component of surgical pathology. Because of the complexity of the task, standardized protocols to guide the gross examination often become a bulky manual that is difficult to use. This problem is further compounded by the high specimen volume and biohazardous nature of the task. As a result, such a manual is often underused, leading to errors that are potentially harmful and time consuming to correct-a common chronic problem affecting many pathology laboratories. To combat this problem, we have developed a simple method that incorporates complex text and graphic information of a typical procedure manual and yet allows easy access to any intended instructive information in the manual. The method uses the Object-Linking-and-Embedding function of Microsoft Word (Microsoft, Redmond, WA) to establish hyperlinks among different contents, and then it uses the touch screen technology to facilitate navigation through the manual on a computer screen installed at the cutting bench with no need for a physical keyboard or a mouse. It takes less than 4 seconds to reach any intended information in the manual by 3 to 4 touches on the screen. A 3-year follow-up study shows that this method has increased use of the manual and has improved the quality of gross examination. The method is simple and can be easily tailored to different formats of instructive information, allowing flexible organization, easy access, and quick navigation. Increased compliance to instructive information reduces errors at the grossing bench and improves work efficiency.

  10. Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures.

    Science.gov (United States)

    Yeo, So Young; Park, Sangsik; Yi, Yeon Jin; Kim, Do Hwan; Lim, Jung Ah

    2017-12-13

    A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa -1 and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand.

  11. Towards social touch intelligence: developing a robust system for automatic touch recognition

    NARCIS (Netherlands)

    Jung, Merel Madeleine

    2014-01-01

    Touch behavior is of great importance during social interaction. Automatic recognition of social touch is necessary to transfer the touch modality from interpersonal interaction to other areas such as Human-Robot Interaction (HRI). This paper describes a PhD research program on the automatic

  12. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Science.gov (United States)

    Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

    2017-07-01

    Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

  13. Friendly touch increases gratitude by inducing communal feelings.

    Science.gov (United States)

    Simão, Cláudia; Seibt, Beate

    2015-01-01

    Communion among people is easily identifiable. Close friends or relatives frequently touch each other and this physical contact helps identifying the type of relationship they have. We tested whether a friendly touch and benefits elicit the emotion of gratitude given the close link between gratitude and communal relations. In Study 1, we induced a communal mindset and manipulated friendly touch (vs. non-touch) and benefit to female participants by a female confederate. We measured pre- and post-benefit gratitude, communal feelings, and liking toward the toucher, as well as general affect. In Study 2, we manipulated mindset, friendly touch and benefit, and measured the same variables in female pairs (confederate and participants). In both studies the results showed a main effect of touch on pre-benefit gratitude: participants who were touched by the confederate indicated more gratitude than those not touched. Moreover, benefit increased gratitude toward a confederate in the absence of touch, but not in the presence of touch. Additionally, perceiving the relationship as communal, and not merely liking the confederate, or a positive mood mediated the link between touch and gratitude. The results further support a causal model where touch increases communal feelings, which in turn increase gratitude at the end of the interaction, after having received a benefit from the interaction partner. These results support a broader definition of gratitude as an emotion embodied in communal relationship cues.

  14. Few-layer SnSe{sub 2} transistors with high on/off ratios

    Energy Technology Data Exchange (ETDEWEB)

    Pei, Tengfei; Bao, Lihong, E-mail: lhbao@iphy.ac.cn; Wang, Guocai; Ma, Ruisong; Yang, Haifang; Li, Junjie; Gu, Changzhi; Du, Shixuan; Gao, Hong-jun [Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190 (China); Pantelides, Sokrates [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Material Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381 (United States)

    2016-02-01

    We report few-layer SnSe{sub 2} field effect transistors (FETs) with high current on/off ratios. By trying different gate configurations, 300 nm SiO{sub 2} and 70 nm HfO{sub 2} as back gate only and 70 nm HfO{sub 2} as back gate combined with a top capping layer of polymer electrolyte, few-layer SnSe{sub 2} FET with a current on/off ratio of 10{sup 4} can be obtained. This provides a reliable solution for electrically modulating quasi-two-dimensional materials with high electron density (over 10{sup 13} cm{sup −2}) for field-effect transistor applications.

  15. A virtual Midas touch? : touch, compliance, and confederate bias in mediated communication

    NARCIS (Netherlands)

    Haans, A.; Bruijn, de R.; IJsselsteijn, W.A.

    2014-01-01

    A brief touch to the shoulder or upper arm increases people’s helping behavior and willingness to comply with requests. In this manuscript, we investigate whether this well-known Midas touch effect is also operative in mediated interactions where the touch act is replaced by electromechanical

  16. Pain relief by touch: a quantitative approach.

    Science.gov (United States)

    Mancini, Flavia; Nash, Thomas; Iannetti, Gian Domenico; Haggard, Patrick

    2014-03-01

    Pain relief by touch has been studied for decades in pain neuroscience. Human perceptual studies revealed analgesic effects of segmental tactile stimulation, as compared to extrasegmental touch. However, the spatial organisation of touch-pain interactions within a single human dermatome has not been investigated yet. In 2 experiments we tested whether, how, and where within a dermatome touch modulates the perception of laser-evoked pain. We measured pain perception using intensity ratings, qualitative descriptors, and signal detection measures of sensitivity and response bias. Touch concurrent with laser pulses produced a significant analgesia, and reduced the sensitivity in detecting the energy of laser stimulation, implying a functional loss of information within the ascending Aδ pathway. Touch also produced a bias to judge laser stimuli as less painful. This bias decreased linearly when the distance between the laser and tactile stimuli increased. Thus, our study provides evidence for a spatial organisation of intrasegmental touch-pain interactions. Copyright © 2013 International Association for the Study of Pain. Published by Elsevier B.V. All rights reserved.

  17. A Transistor Sizing Tool for Optimization of Analog CMOS Circuits: TSOp

    OpenAIRE

    Y.C.Wong; Syafeeza A. R; N. A. Hamid

    2015-01-01

    Optimization of a circuit by transistor sizing is often a slow, tedious and iterative manual process which relies on designer intuition. It is highly desirable to automate the transistor sizing process towards being able to rapidly design high performance integrated circuit. Presented here is a simple but effective algorithm for automatically optimizing the circuit parameters by exploiting the relationships among the genetic algorithm's coefficient values derived from the analog circuit desig...

  18. Transport spectroscopy of coupled donors in silicon nano-transistors

    Science.gov (United States)

    Moraru, Daniel; Samanta, Arup; Anh, Le The; Mizuno, Takeshi; Mizuta, Hiroshi; Tabe, Michiharu

    2014-01-01

    The impact of dopant atoms in transistor functionality has significantly changed over the past few decades. In downscaled transistors, discrete dopants with uncontrolled positions and number induce fluctuations in device operation. On the other hand, by gaining access to tunneling through individual dopants, a new type of devices is developed: dopant-atom-based transistors. So far, most studies report transport through dopants randomly located in the channel. However, for practical applications, it is critical to control the location of the donors with simple techniques. Here, we fabricate silicon transistors with selectively nanoscale-doped channels using nano-lithography and thermal-diffusion doping processes. Coupled phosphorus donors form a quantum dot with the ground state split into a number of levels practically equal to the number of coupled donors, when the number of donors is small. Tunneling-transport spectroscopy reveals fine features which can be correlated with the different numbers of donors inside the quantum dot, as also suggested by first-principles simulation results. PMID:25164032

  19. Social touch and human development.

    Science.gov (United States)

    Cascio, Carissa J; Moore, David; McGlone, Francis

    2018-04-24

    Social touch is a powerful force in human development, shaping social reward, attachment, cognitive, communication, and emotional regulation from infancy and throughout life. In this review, we consider the question of how social touch is defined from both bottom-up and top-down perspectives. In the former category, there is a clear role for the C-touch (CT) system, which constitutes a unique submodality that mediates affective touch and contrasts with discriminative touch. Top-down factors such as culture, personal relationships, setting, gender, and other contextual influences are also important in defining and interpreting social touch. The critical role of social touch throughout the lifespan is considered, with special attention to infancy and young childhood, a time during which social touch and its neural, behavioral, and physiological contingencies contribute to reinforcement-based learning and impact a variety of developmental trajectories. Finally, the role of social touch in an example of disordered development -autism spectrum disorder-is reviewed. Copyright © 2018. Published by Elsevier Ltd.

  20. Study of an Insulated Gate Bipolar Transistor (IGBT) and its connection in series. Application at a chopper 1500V-5A-10kHz

    International Nuclear Information System (INIS)

    Gros, P.

    1993-01-01

    In the frame of the tokamak ITER (International Thermonuclear Experimental Reactor) we have studied, for neutral particle injection, a converter with at least two static interrupters by Mosfet transistor, bipolar transistor or Insulated Gate Bipolar Transistor (IGBT). After a comparison between these three types of transistors, by the simulating software MICROCAP, a serial of tests has shown the advantages of the IGBT. A command, associated with two IGBT of equivalent characteristics, has given a simple and efficacious solution. The performances are: (1) between two blockages: 50 ns without overvoltage, (2) between two cut-off: 60 ns. 40 figs; 30 refs; 10 annexes

  1. Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

    International Nuclear Information System (INIS)

    Renteria, J.; Jiang, C.; Samnakay, R.; Rumyantsev, S. L.; Goli, P.; Balandin, A. A.; Shur, M. S.

    2014-01-01

    We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS 2 field-effect transistors revealing the relative contributions of the MoS 2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS 2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS 2 transistors, are 2 × 10 19  eV −1 cm −3 and 2.5 × 10 20  eV −1 cm −3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS 2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS 2 and other van der Waals materials

  2. Parametrization of the radiation induced leakage current increase of NMOS transistors

    CERN Document Server

    Backhaus, Malte

    2017-01-13

    The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies do not make use of these techniques due to their drawbacks in terms of logic density and requirement of dedicated libraries. During operation the resulting increase of the supply current is a serious challenge and needs to be considered during the system design. A simple parametrization of the leakage current of NMOS transistors as a function of total ionizing dose is presented. The parametrization uses a transistor transfer characteristics of the parasitic transistor along the shallow trench isolation to describe the leakage current of the nominal transistor. Together with a parametrization of the number of positive charges trapped in the silicon dioxide and number of activated interface traps in the silicon to si...

  3. Analysis of small deflection touch mode behavior in capacitive pressure sensors

    DEFF Research Database (Denmark)

    Fragiacomo, Giulio; Ansbæk, Thor; Pedersen, Thomas

    2010-01-01

    Due to an increasing need for devices with low power consumption, capacitive pressure sensors have become good substitutes for the well known piezoresistive pressure sensors. Mathematical models are necessary to design and characterize the device, preferably the model is analytical...... such that geometrical scalings are revealed. We show that, in the case of linear elastic behavior, a simple analytical model can be found for a touch mode capacitive pressure sensor (TMCPS). With this model it is possible to readily evaluate the main features of a TMCPS such as: sensitivity (both in normal and touch...... mode), touch point pressure and parasitic capacitance. Therefore, the desired device can be designed without using finite element modeling (FEM). This reduces the effort needed to design a micromachined TMCPS. Finally, the model has been compared with a micromachined TMCPS showing an excellent...

  4. An fMRI study on cortical responses during active self-touch and passive touch from others

    Directory of Open Access Journals (Sweden)

    Rochelle eAckerley

    2012-08-01

    Full Text Available Active, self-touch and the passive touch from an external source engage comparable afferent mechanoreceptors on the touched skin site. However, touch directed to glabrous skin compared to hairy skin will activate different types of afferent mechanoreceptors. Despite perceptual similarities between touch to different body sites, it is likely that the touch information is processed differently. In the present study, we used functional magnetic resonance imaging (fMRI to elucidate the cortical differences in the neural signal of touch representations during active, self-touch and passive touch from another, to both glabrous (palm and hairy (arm skin, where a soft brush was used as the stimulus. There were two active touch conditions, where the participant used the brush in their right hand to stroke either their left palm or arm. There were two similar passive, touch conditions where the experimenter used an identical brush to stroke the same palm and arm areas on the participant. Touch on the left palm elicited a large, significant, positive blood-oxygenation level dependence (BOLD signal in right sensorimotor areas. Less extensive activity was found for touch to the arm. Separate somatotopical palm and arm representations were found in Brodmann area 3 of the right primary somatosensory cortex (SI and in both these areas, active stroking gave significantly higher signals than passive stroking. Active, self-touch elicited a positive BOLD signal in a network of sensorimotor cortical areas in the left hemisphere, compared to the resting baseline. In contrast, during passive touch, a significant negative BOLD signal was found in the left SI. Thus, each of the four conditions had a unique cortical signature despite similarities in afferent signalling or evoked perception. It is hypothesized that attentional mechanisms play a role in the modulation of the touch signal in the right SI, accounting for the differences found between active and passive touch.

  5. Dosimetric properties of MOS transistors

    International Nuclear Information System (INIS)

    Frank, H.; Petr, I.

    1977-01-01

    The structure of MOS transistors is described and their characteristics given. The experiments performed and data in the literature show the following dosimetric properties of MOS transistors: while for low gamma doses the transistor response to exposure is linear, it shows saturation for higher doses (exceeding 10 3 Gy in tissue). The response is independent of the energy of radiation and of the dose rate (within 10 -2 to 10 5 Gy/s). The spontaneous reduction with time of the spatial charge captured by the oxide layer (fading) is small and acceptable from the point of view of dosimetry. Curves are given of isochronous annealing of the transistors following irradiation with 137 Cs and 18 MeV electrons for different voltages during irradiation. The curves show that in MOS transistors irradiated with high-energy electrons the effect of annealing is less than in transistors irradiated with 137 Cs. In view of the requirement of using higher temperatures (approx. 400 degC) for the complete ''erasing'' of the captured charge, unsealed systems must be used for dosimetric purposes. The effect was also studied of neutron radiation, proton radiation and electron radiation on the MOS transistor structure. For MOS transistor irradiation with 14 MeV neutrons from a neutron generator the response was 4% of that for gamma radiation at the same dose equivalent. The effect of proton radiation was studied as related to the changes in MOS transistor structure during space flights. The response curve shapes are similar to those of gamma radiation curves. The effect of electron radiation on the MOS structure was studied by many authors. The experiments show that for each thickness of the SiO 2 layer an electron energy exists at which the size of the charge captured in SiO 2 is the greatest. All data show that MOS transistors are promising for radiation dosimetry. The main advantage of MOS transistors as gamma dosemeters is the ease and speed of evaluation, low sensitivity to neutron

  6. Touch and You’re Trapp(cked: Quantifying the Uniqueness of Touch Gestures for Tracking

    Directory of Open Access Journals (Sweden)

    Masood Rahat

    2018-04-01

    Full Text Available We argue that touch-based gestures on touch-screen devices enable the threat of a form of persistent and ubiquitous tracking which we call touch-based tracking. Touch-based tracking goes beyond the tracking of virtual identities and has the potential for cross-device tracking as well as identifying multiple users using the same device. We demonstrate the likelihood of touch-based tracking by focusing on touch gestures widely used to interact with touch devices such as swipes and taps.. Our objective is to quantify and measure the information carried by touch-based gestures which may lead to tracking users. For this purpose, we develop an information theoretic method that measures the amount of information about users leaked by gestures when modelled as feature vectors. Our methodology allows us to evaluate the information leaked by individual features of gestures, samples of gestures, as well as samples of combinations of gestures. Through our purpose-built app, called TouchTrack, we gather gesture samples from 89 users, and demonstrate that touch gestures contain sufficient information to uniquely identify and track users. Our results show that writing samples (on a touch pad can reveal 73.7% of information (when measured in bits, and left swipes can reveal up to 68.6% of information. Combining different combinations of gestures results in higher uniqueness, with the combination of keystrokes, swipes and writing revealing up to 98.5% of information about users. We further show that, through our methodology, we can correctly re-identify returning users with a success rate of more than 90%.

  7. The MAGIC Touch: Combining MAGIC-Pointing with a Touch-Sensitive Mouse

    Science.gov (United States)

    Drewes, Heiko; Schmidt, Albrecht

    In this paper, we show how to use the combination of eye-gaze and a touch-sensitive mouse to ease pointing tasks in graphical user interfaces. A touch of the mouse positions the mouse pointer at the current gaze position of the user. Thus, the pointer is always at the position where the user expects it on the screen. This approach changes the user experience in tasks that include frequent switching between keyboard and mouse input (e.g. working with spreadsheets). In a user study, we compared the touch-sensitive mouse with a traditional mouse and observed speed improvements for pointing tasks on complex backgrounds. For pointing task on plain backgrounds, performances with both devices were similar, but users perceived the gaze-sensitive interaction of the touch-sensitive mouse as being faster and more convenient. Our results show that using a touch-sensitive mouse that positions the pointer on the user’s gaze position reduces the need for mouse movements in pointing tasks enormously.

  8. Friendly touch increases gratitude by inducing communal feelings

    Directory of Open Access Journals (Sweden)

    Cláudia eSimão

    2015-06-01

    Full Text Available Communion among people is easily identifiable. Close friends or relatives frequently touch each other and this physical contact helps identifying the type of relationship they have. We tested whether a friendly touch and benefits elicit the emotion of gratitude given the close link between gratitude and communal relations. In Study 1 we induced a communal mindset and manipulated friendly touch (vs. non-touch and benefit to female participants by a female confederate. We measured pre- and post-benefit gratitude, communal feelings, and liking towards the toucher, as well as general affect. In Study 2 we manipulated mindset, friendly touch and benefit, and measured the same variables in female pairs (confederate and participants. In both studies the results showed a main effect of touch on pre-benefit gratitude: participants who were touched by the confederate indicated more gratitude than those not touched. Moreover, benefit increased gratitude towards a confederate in the absence of touch, but not in the presence of touch. Additionally, perceiving the relationship as communal, and not merely liking the confederate, or a positive mood mediated the link between touch and gratitude. The results further support a causal model where touch increases communal feelings, which in turn increase gratitude at the end of the interaction, after having received a benefit from the interaction partner. These results support a broader definition of gratitude as an emotion embodied in communal relationship cues.

  9. Patterns of Touching between Preschool Children and Their Parents.

    Science.gov (United States)

    Fialkov, Claire; And Others

    Twenty 2- to 5-year-old children were observed during separate play with their mothers and fathers in an attempt to more clearly define patterns of touching. Specific purposes of the study were: (1) to identify the different functions of touch; (2) to determine the frequency of occurrence and duration of different types of touches; (3) to describe…

  10. The communication of emotion via touch.

    Science.gov (United States)

    Hertenstein, Matthew J; Holmes, Rachel; McCullough, Margaret; Keltner, Dacher

    2009-08-01

    The study of emotional communication has focused predominantly on the facial and vocal channels but has ignored the tactile channel. Participants in the current study were allowed to touch an unacquainted partner on the whole body to communicate distinct emotions. Of interest was how accurately the person being touched decoded the intended emotions without seeing the tactile stimulation. The data indicated that anger, fear, disgust, love, gratitude, and sympathy were decoded at greater than chance levels, as well as happiness and sadness, 2 emotions that have not been shown to be communicated by touch to date. Moreover, fine-grained coding documented specific touch behaviors associated with different emotions. The findings are discussed in terms of their contribution to the study of emotion-related communication. 2009 APA, all rights reserved.

  11. Touch massage, a rewarding experience.

    Science.gov (United States)

    Lindgren, Lenita; Jacobsson, Maritha; Lämås, Kristina

    2014-12-01

    This study aims to describe and analyze healthy individuals' expressed experiences of touch massage (TM). Fifteen healthy participants received whole body touch massage during 60 minutes for two separate occasions. Interviews were analyzed by narrative analysis. Four identifiable storyline was found, Touch massage as an essential need, in this storyline the participants talked about a desire and need for human touch and TM. Another storyline was about, Touch massage as a pleasurable experience and the participants talked about the pleasure of having had TM. In the third storyline Touch massage as a dynamic experience, the informants talked about things that could modulate the experience of receiving TM. In the last storyline, Touch massage influences self-awareness, the participants described how TM affected some of their psychological and physical experiences. Experiences of touch massage was in general described as pleasant sensations and the different storylines could be seen in the light of rewarding experiences. © The Author(s) 2014.

  12. Stretchable, Transparent, and Stretch-Unresponsive Capacitive Touch Sensor Array with Selectively Patterned Silver Nanowires/Reduced Graphene Oxide Electrodes.

    Science.gov (United States)

    Choi, Tae Young; Hwang, Byeong-Ung; Kim, Bo-Yeong; Trung, Tran Quang; Nam, Yun Hyoung; Kim, Do-Nyun; Eom, Kilho; Lee, Nae-Eung

    2017-05-31

    Stretchable and transparent touch sensors are essential input devices for future stretchable transparent electronics. Capacitive touch sensors with a simple structure of only two electrodes and one dielectric are an established technology in current rigid electronics. However, the development of stretchable and transparent capacitive touch sensors has been limited due to changes in capacitance resulting from dimensional changes in elastomeric dielectrics and difficulty in obtaining stretchable transparent electrodes that are stable under large strains. Herein, a stretch-unresponsive stretchable and transparent capacitive touch sensor array was demonstrated by employing stretchable and transparent electrodes with a simple selective-patterning process and by carefully selecting dielectric and substrate materials with low strain responsivity. A selective-patterning process was used to embed a stretchable and transparent silver nanowires/reduced graphene oxide (AgNWs/rGO) electrode line into a polyurethane (PU) dielectric layer on a polydimethylsiloxane (PDMS) substrate using oxygen plasma treatment. This method provides the ability to directly fabricate thin film electrode lines on elastomeric substrates and can be used in conventional processes employed in stretchable electronics. We used a dielectric (PU) with a Poisson's ratio smaller than that of the substrate (PDMS), which prevented changes in the capacitance resulting from stretching of the sensor. The stretch-unresponsive touch sensing capability of our transparent and stretchable capacitive touch sensor has great potential in wearable electronics and human-machine interfaces.

  13. Touching the Void - Introducing CoST: Corpus of Social Touch

    NARCIS (Netherlands)

    Jung, Merel M.; Poppe, Ronald; Poel, Mannes; Heylen, Dirk K. J.

    2014-01-01

    Touch behavior is of great importance during social interaction. To transfer the tactile modality from interpersonal interaction to other areas such as Human-Robot Interaction (HRI) and remote communication automatic recognition of social touch is necessary. This paper introduces CoST: Corpus of

  14. How to Touch Humans : Guidelines for Social Agents and Robots that can Touch

    NARCIS (Netherlands)

    Erp, J.B.F. van; Toet, A.

    2013-01-01

    Touch is an essential channel in interpersonal and affective communication, yet most social agents currently lack the capability to touch the user. In this paper we show the credibility of three premises that make the case that providing touch capability to social robots will increase their

  15. Parametrization of the radiation induced leakage current increase of NMOS transistors

    International Nuclear Information System (INIS)

    Backhaus, M.

    2017-01-01

    The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies do not make use of these techniques due to their drawbacks in terms of logic density and requirement of dedicated libraries. During operation the resulting increase of the supply current is a serious challenge and needs to be considered during the system design. A simple parametrization of the leakage current of NMOS transistors as a function of total ionizing dose is presented. The parametrization uses a transistor transfer characteristics of the parasitic transistor along the shallow trench isolation to describe the leakage current of the nominal transistor. Together with a parametrization of the number of positive charges trapped in the silicon dioxide and number of activated interface traps in the silicon to silicon dioxide interface the leakage current results as a function of the exposure time to ionizing radiation. This function is fitted to data of the leakage current of single transistors as well as to data of the supply current of full ASICs.

  16. Touching my left elbow: the anatomical structure of the body affects the illusion of self-touch.

    Science.gov (United States)

    White, Rebekah C; Aimola Davies, Anne M

    2011-01-01

    A self-touch paradigm is used to create the illusion that one is touching one's own left elbow when one is actually touching the examiner's arm. Our new self-touch illusion is sensitive to the anatomical structure of the body: you can touch your left elbow with your right index finger but not with your left index finger. Illusion onset was faster and illusion ratings were higher when participants administered touch using the plausible right index finger compared with the implausible left index finger.

  17. Reduced graphene oxide filled poly(dimethyl siloxane) based transparent stretchable, and touch-responsive sensors

    International Nuclear Information System (INIS)

    Ponnamma, Deepalekshmi; Sadasivuni, Kishor Kumar; Cabibihan, John-John; Yoon, W. Jong; Kumar, Bijandra

    2016-01-01

    The ongoing revolution in touch panel technology and electronics demands the need for thin films, which are flexible, stretchable, conductive, and highly touch responsive. In this regard, conductive elastomer nanocomposites offer potential solutions for these stipulations; however, viability is limited to the poor dispersion of conductive nanomaterials such as graphene into the matrix. Here, we fabricated a reduced graphene oxide (rGO) and poly(dimethylsiloxane) (PDMS) elastomer based transparent and flexible conductive touch responsive film by dispersing rGO honeycombs uniformly into PDMS elastomer through an ionic liquid (IL) modification. Pursuing a simple, scalable, and safe method of solution casting, this provides a versatile and creative design of a transparent and stretchable rGO/IL-PDMS capacitive touch responsive, where rGO acts as a sensing element. This transparent film with ∼70% transmittance exhibits approximately a five times faster response in comparison to rGO/PDMS film, with negligible degradation over time. The performance of this touch screen film is expected to have applications in the emerging field of foldable electronics.

  18. Reduced graphene oxide filled poly(dimethyl siloxane) based transparent stretchable, and touch-responsive sensors

    Energy Technology Data Exchange (ETDEWEB)

    Ponnamma, Deepalekshmi [Center for Advanced Materials, Qatar University, P. O. Box 2713, Doha (Qatar); Sadasivuni, Kishor Kumar; Cabibihan, John-John [Mechanical and Industrial Engineering, Qatar University, P.O. Box 2713, Doha (Qatar); Yoon, W. Jong [School of Science, Technology, Engineering, and Mathematics, University of Washington, Bothell, Washington 98011 (United States); Kumar, Bijandra, E-mail: bijandra.kumar@louisville.edu [Conn Center for Renewable Energy Research, University of Louisville, Louisville, Kentucky 40292 (United States); Research and Development Centre in Pharmaceutical Science and Applied Chemistry, Poona College of Pharmacy, Bharati Vidyapeeth Deemed University Erandawane, Pune 411038 (India)

    2016-04-25

    The ongoing revolution in touch panel technology and electronics demands the need for thin films, which are flexible, stretchable, conductive, and highly touch responsive. In this regard, conductive elastomer nanocomposites offer potential solutions for these stipulations; however, viability is limited to the poor dispersion of conductive nanomaterials such as graphene into the matrix. Here, we fabricated a reduced graphene oxide (rGO) and poly(dimethylsiloxane) (PDMS) elastomer based transparent and flexible conductive touch responsive film by dispersing rGO honeycombs uniformly into PDMS elastomer through an ionic liquid (IL) modification. Pursuing a simple, scalable, and safe method of solution casting, this provides a versatile and creative design of a transparent and stretchable rGO/IL-PDMS capacitive touch responsive, where rGO acts as a sensing element. This transparent film with ∼70% transmittance exhibits approximately a five times faster response in comparison to rGO/PDMS film, with negligible degradation over time. The performance of this touch screen film is expected to have applications in the emerging field of foldable electronics.

  19. Effect of passivation on the sensitivity and stability of pentacene transistor sensors in aqueous media

    KAUST Repository

    Khan, Hadayat Ullah

    2011-06-01

    Charge-detecting biosensors have recently become the focal point of biosensor research, especially research onto organic thin-film transistors (OTFTs), which combine compactness, a low cost, and fast and label-free detection to realize simple and stable in vivo diagnostic systems. We fabricated organic pentacene-based bottom-contact thin-film transistors with an ultra-thin insulating layer of a cyclized perfluoro polymer called CYTOP (Asahi Glass Co., Tokyo, Japan) on SiO2 for operation in aqueous media. The stability and sensitivity of these transistor sensors were examined in aqueous buffer media with solutions of variable pH levels after the passivation of perfluoro polymers with thicknesses ranging from 50 to 300nm. These transistor sensors were further modified with an ultra-thin film (5nm) functional layer for selective BSA/antiBSA detection in aqueous buffer media, demonstrating a detection capability as low as 500nM of concentrated antiBSA. The dissociation constant from the antiBSA detection results was 2.1×10-6M. Thus, this study represents a significant step forward in the development of organic electronics for a disposable and versatile chemical and bio-sensing platform. © 2011 Elsevier B.V.

  20. Dosimetric properties of MOS transistors

    International Nuclear Information System (INIS)

    Peter, I.; Frank, G.

    1977-01-01

    The performance of MOS transistors as gamma detectors has been tested. The dosimeter sensitivity has proved to be independent on the doses ranging from 10 3 to 10 6 R, and gamma energy of 137 Cs, 60 Co - sources and 5 - 18 MeV electrons. Fading of the space charge trapped by the SiO 2 layer of the transistor has appeared to be neglegible at room temperature after 400 hrs. The isochronous annealing in the temperature range of 40-260 deg C had a more substantial effect on the space charge of the transistor irradiated with 18 MeV electrons than on the 137 Cs gamma-irradiated transistors. This proved a repeated use of γ-dosemeters. MOS transistors are concluded to be promising for gamma dosimetry [ru

  1. Developing Mixed Reality Educational Applications: The Virtual Touch Toolkit.

    Science.gov (United States)

    Mateu, Juan; Lasala, María José; Alamán, Xavier

    2015-08-31

    In this paper, we present Virtual Touch, a toolkit that allows the development of educational activities through a mixed reality environment such that, using various tangible elements, the interconnection of a virtual world with the real world is enabled. The main goal of Virtual Touch is to facilitate the installation, configuration and programming of different types of technologies, abstracting the creator of educational applications from the technical details involving the use of tangible interfaces and virtual worlds. Therefore, it is specially designed to enable teachers to themselves create educational activities for their students in a simple way, taking into account that teachers generally lack advanced knowledge in computer programming and electronics. The toolkit has been used to develop various educational applications that have been tested in two secondary education high schools in Spain.

  2. Developing Mixed Reality Educational Applications: The Virtual Touch Toolkit

    Science.gov (United States)

    Mateu, Juan; Lasala, María José; Alamán, Xavier

    2015-01-01

    In this paper, we present Virtual Touch, a toolkit that allows the development of educational activities through a mixed reality environment such that, using various tangible elements, the interconnection of a virtual world with the real world is enabled. The main goal of Virtual Touch is to facilitate the installation, configuration and programming of different types of technologies, abstracting the creator of educational applications from the technical details involving the use of tangible interfaces and virtual worlds. Therefore, it is specially designed to enable teachers to themselves create educational activities for their students in a simple way, taking into account that teachers generally lack advanced knowledge in computer programming and electronics. The toolkit has been used to develop various educational applications that have been tested in two secondary education high schools in Spain. PMID:26334275

  3. Human figure drawings and children's recall of touching.

    Science.gov (United States)

    Bruck, Maggie

    2009-12-01

    In 2 studies, children ages 3 to 7 years were asked to recall a series of touches that occurred during a previous staged event. The recall interview took place 1 week after the event in Study 1 and immediately after the event in Study 2. Each recall interview had 2 sections: In 1 section, children were given human figure drawings (HFDs) and were asked to show where the touching took place; in the other section, the same questions were asked without the HFDs (verbal condition). Children were randomly assigned to 2 different conditions: HFD 1st/verbal 2nd or verbal 1st/HFD 2nd. There were 2 major findings. First, HFDs elicited more errors than the verbal condition when used to probe for information that the child had already been asked. Second, regardless of interview method, children had poor recall of the touches even when these occurred minutes before the interview. It is suggested that cognitive mechanisms involving memory and semantics underlie children's poor recall of touching in both verbal and HFD conditions. Copyright 2009 APA

  4. Integrating 2D Mouse Emulation with 3D Manipulation for Visualizations on a Multi-Touch Table

    NARCIS (Netherlands)

    Vlaming, Luc; Collins, Christopher; Hancock, Mark; Nacenta, Miguel; Isenberg, Tobias; Carpendale, Sheelagh

    2010-01-01

    We present the Rizzo, a multi-touch virtual mouse that has been designed to provide the fine grained interaction for information visualization on a multi-touch table. Our solution enables touch interaction for existing mouse-based visualizations. Previously, this transition to a multi-touch

  5. The ten rules of touch : Guidelines for social agents and robots that can touch

    NARCIS (Netherlands)

    Erp, J.B.F. van

    2012-01-01

    Touching is essential in interpersonal and affective communication, yet most social agents lack the capability to touch the user. In this paper we show the credibility of three premises that make the case that providing touch capability to social robots will increase their effectiveness in

  6. Remarkable Enhancement of the Hole Mobility in Several Organic Small-Molecules, Polymers, and Small-Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid p-Dopant B(C6F5)3

    KAUST Repository

    Panidi, Julianna; Paterson, Alexandra F.; Khim, Dongyoon; Fei, Zhuping; Han, Yang; Tsetseris, Leonidas; Vourlias, George; Patsalas, Panos A.; Heeney, Martin; Anthopoulos, Thomas D.

    2017-01-01

    Improving the charge carrier mobility of solution-processable organic semiconductors is critical for the development of advanced organic thin-film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small-molecules, polymers, and small-molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C6F5)(3) in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C6F5)(3) is shown to have a remarkable impact are the blends of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF-TESADT:PTAA) and 2,7-dioctyl[1]-benzothieno[3,2-b][1]benzothiophene:poly(indacenodithiophene-co-benzothiadiazole) (C8-BTBT:C16-IDTBT), for which hole mobilities of 8 and 11 cm(2) V-1 s(-1), respectively, are obtained. Doping of the 6,13-bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C6F5)(3) is also shown to increase the maximum hole mobility to 3.7 cm(2) V-1 s(-1). Analysis of the single and multicomponent materials reveals that B(C6F5)(3) plays a dual role, first acting as an efficient p-dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p-doping and dopant-induced long-range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics.

  7. Remarkable Enhancement of the Hole Mobility in Several Organic Small-Molecules, Polymers, and Small-Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid p-Dopant B(C6F5)3.

    Science.gov (United States)

    Panidi, Julianna; Paterson, Alexandra F; Khim, Dongyoon; Fei, Zhuping; Han, Yang; Tsetseris, Leonidas; Vourlias, George; Patsalas, Panos A; Heeney, Martin; Anthopoulos, Thomas D

    2018-01-01

    Improving the charge carrier mobility of solution-processable organic semiconductors is critical for the development of advanced organic thin-film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small-molecules, polymers, and small-molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C 6 F 5 ) 3 in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C 6 F 5 ) 3 is shown to have a remarkable impact are the blends of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF-TESADT:PTAA) and 2,7-dioctyl[1]-benzothieno[3,2-b][1]benzothiophene:poly(indacenodithiophene-co-benzothiadiazole) (C8-BTBT:C16-IDTBT), for which hole mobilities of 8 and 11 cm 2 V -1 s -1 , respectively, are obtained. Doping of the 6,13-bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C 6 F 5 ) 3 is also shown to increase the maximum hole mobility to 3.7 cm 2 V -1 s -1 . Analysis of the single and multicomponent materials reveals that B(C 6 F 5 ) 3 plays a dual role, first acting as an efficient p-dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p-doping and dopant-induced long-range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics.

  8. Remarkable Enhancement of the Hole Mobility in Several Organic Small-Molecules, Polymers, and Small-Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid p-Dopant B(C6F5)3

    KAUST Repository

    Panidi, Julianna

    2017-10-05

    Improving the charge carrier mobility of solution-processable organic semiconductors is critical for the development of advanced organic thin-film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small-molecules, polymers, and small-molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C6F5)(3) in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C6F5)(3) is shown to have a remarkable impact are the blends of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF-TESADT:PTAA) and 2,7-dioctyl[1]-benzothieno[3,2-b][1]benzothiophene:poly(indacenodithiophene-co-benzothiadiazole) (C8-BTBT:C16-IDTBT), for which hole mobilities of 8 and 11 cm(2) V-1 s(-1), respectively, are obtained. Doping of the 6,13-bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C6F5)(3) is also shown to increase the maximum hole mobility to 3.7 cm(2) V-1 s(-1). Analysis of the single and multicomponent materials reveals that B(C6F5)(3) plays a dual role, first acting as an efficient p-dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p-doping and dopant-induced long-range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics.

  9. Voluntary self-touch increases body ownership

    Directory of Open Access Journals (Sweden)

    Masayuki eHara

    2015-10-01

    Full Text Available Experimental manipulations of body ownership have indicated that multisensory integration is central to forming bodily self-representation. Voluntary self-touch is a unique multisensory situation involving corresponding motor, tactile and proprioceptive signals. Yet, even though self-touch is frequent in everyday life, its contribution to the formation of body ownership is not well understood. Here we investigated the role of voluntary self-touch in body ownership using a novel adaptation of the rubber hand illusion (RHI, in which a robotic system and virtual reality allowed participants self-touch of real and virtual hands. In the first experiment, active and passive self-touch were applied in the absence of visual feedback. In the second experiment, we tested the role of visual feedback in this bodily illusion. Finally, in the third experiment, we compared active and passive self-touch to the classical RHI in which the touch is administered by the experimenter. We hypothesized that active self-touch would increase ownership over the virtual hand through the addition of motor signals strengthening the bodily illusion. The results indicated that active self-touch elicited stronger illusory ownership compared to passive self-touch and sensory only stimulation, and indicate an important role of active self-touch in the formation of bodily self.

  10. Low-frequency 1/f noise in MoS{sub 2} transistors: Relative contributions of the channel and contacts

    Energy Technology Data Exchange (ETDEWEB)

    Renteria, J.; Jiang, C. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521 (United States); Samnakay, R. [Materials Science and Engineering Program, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Goli, P.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521 (United States); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2014-04-14

    We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS{sub 2} field-effect transistors revealing the relative contributions of the MoS{sub 2} channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS{sub 2} transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS{sub 2} transistors, are 2 × 10{sup 19} eV{sup −1}cm{sup −3} and 2.5 × 10{sup 20} eV{sup −1}cm{sup −3} for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS{sub 2} transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS{sub 2} and other van der Waals materials.

  11. Please Touch the Children: Appropriate Touch in the Primary Classroom

    Science.gov (United States)

    Owen, Pamela M.; Gillentine, Jonathan

    2011-01-01

    This study proposes to shift the current theoretical framework in which teachers practise a guarded approach regarding the touching of children in early childhood settings, towards a practice of acceptance. A brief historical context of touching is presented and supplemented with a survey of 63 currently practising K-3rd grade teachers. The survey…

  12. Performance and touch characteristics of disabled and non-disabled participants during a reciprocal tapping task using touch screen technology.

    Science.gov (United States)

    Irwin, Curt B; Sesto, Mary E

    2012-11-01

    Touch screens are becoming more prevalent in everyday environments. Therefore, it is important that this technology is accessible to those with varying disabilities. The objective of the current study was to evaluate performance and touch characteristics (forces, impulses, and dwell times) of individuals with and without a movement disorder during a reciprocal tapping touch screen task. Thirty-seven participants with a motor control disability and 15 non-disabled participants participated. Outcome measures include number of correct taps, dwell time, exerted force, and impulse. Results indicate non-disabled participants had 1.8 more taps than participants with fine motor control disabilities and 2.8 times more than those with gross motor impairments (ptouch characteristics exist between those with and without motor control disabilities. Understanding how people (including those with disabilities) interact with touch screens may allow designers and engineers to ultimately improve usability of touch screen technology. Copyright © 2012 Elsevier Ltd and The Ergonomics Society. All rights reserved.

  13. Shape from touch

    NARCIS (Netherlands)

    Kappers, A.M.L.; Bergmann Tiest, W.M.

    2014-01-01

    The shape of objects cannot only be recognized by vision, but also by touch. Vision has the advantage that shapes can be seen at a distance, but touch has the advantage that during exploration many additional object properties become available, such as temperature (Jones, 2009), texture (Bensmaia,

  14. Large-Area Cross-Aligned Silver Nanowire Electrodes for Flexible, Transparent, and Force-Sensitive Mechanochromic Touch Screens.

    Science.gov (United States)

    Cho, Seungse; Kang, Saewon; Pandya, Ashish; Shanker, Ravi; Khan, Ziyauddin; Lee, Youngsu; Park, Jonghwa; Craig, Stephen L; Ko, Hyunhyub

    2017-04-25

    Silver nanowire (AgNW) networks are considered to be promising structures for use as flexible transparent electrodes for various optoelectronic devices. One important application of AgNW transparent electrodes is the flexible touch screens. However, the performances of flexible touch screens are still limited by the large surface roughness and low electrical to optical conductivity ratio of random network AgNW electrodes. In addition, although the perception of writing force on the touch screen enables a variety of different functions, the current technology still relies on the complicated capacitive force touch sensors. This paper demonstrates a simple and high-throughput bar-coating assembly technique for the fabrication of large-area (>20 × 20 cm 2 ), highly cross-aligned AgNW networks for transparent electrodes with the sheet resistance of 21.0 Ω sq -1 at 95.0% of optical transmittance, which compares favorably with that of random AgNW networks (sheet resistance of 21.0 Ω sq -1 at 90.4% of optical transmittance). As a proof of concept demonstration, we fabricate flexible, transparent, and force-sensitive touch screens using cross-aligned AgNW electrodes integrated with mechanochromic spiropyran-polydimethylsiloxane composite film. Our force-sensitive touch screens enable the precise monitoring of dynamic writings, tracing and drawing of underneath pictures, and perception of handwriting patterns with locally different writing forces. The suggested technique provides a robust and powerful platform for the controllable assembly of nanowires beyond the scale of conventional fabrication techniques, which can find diverse applications in multifunctional flexible electronic and optoelectronic devices.

  15. Doped Organic Transistors.

    Science.gov (United States)

    Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

    2016-11-23

    Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

  16. Touched by the storyteller: the influence of remote touch in the context of storytelling

    NARCIS (Netherlands)

    Jung, Merel Madeleine; Boensma, Robert W.M.; Huisman, Gijs; van Dijk, Elisabeth M.A.G.

    In this study we investigate the role of remote touch as an additional communication channel in the context of storytelling. We focus on studying the effect of remote touch and the timing of touch on perceived social presence and story recall. In our experiment people listened to an emotional story.

  17. TouchTerrain: A simple web-tool for creating 3D-printable topographic models

    Science.gov (United States)

    Hasiuk, Franciszek J.; Harding, Chris; Renner, Alex Raymond; Winer, Eliot

    2017-12-01

    An open-source web-application, TouchTerrain, was developed to simplify the production of 3D-printable terrain models. Direct Digital Manufacturing (DDM) using 3D Printers can change how geoscientists, students, and stakeholders interact with 3D data, with the potential to improve geoscience communication and environmental literacy. No other manufacturing technology can convert digital data into tangible objects quickly at relatively low cost; however, the expertise necessary to produce a 3D-printed terrain model can be a substantial burden: knowledge of geographical information systems, computer aided design (CAD) software, and 3D printers may all be required. Furthermore, printing models larger than the build volume of a 3D printer can pose further technical hurdles. The TouchTerrain web-application simplifies DDM for elevation data by generating digital 3D models customized for a specific 3D printer's capabilities. The only required user input is the selection of a region-of-interest using the provided web-application with a Google Maps-style interface. Publically available digital elevation data is processed via the Google Earth Engine API. To allow the manufacture of 3D terrain models larger than a 3D printer's build volume the selected area can be split into multiple tiles without third-party software. This application significantly reduces the time and effort required for a non-expert like an educator to obtain 3D terrain models for use in class. The web application is deployed at http://touchterrain.geol.iastate.edu/

  18. Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

    Science.gov (United States)

    Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

    2015-11-13

    Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

  19. Ionizing/displacement synergistic effects induced by gamma and neutron irradiation in gate-controlled lateral PNP bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chenhui, E-mail: wangchenhui@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi’an 710024 (China); Chen, Wei; Yao, Zhibin; Jin, Xiaoming; Liu, Yan; Yang, Shanchao [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi’an 710024 (China); Wang, Zhikuan [State Key Laboratory of Analog Integrated Circuit, Chongqing 400060 (China)

    2016-09-21

    A kind of gate-controlled lateral PNP bipolar transistor has been specially designed to do experimental validations and studies on the ionizing/displacement synergistic effects in the lateral PNP bipolar transistor. The individual and mixed irradiation experiments of gamma rays and neutrons are accomplished on the transistors. The common emitter current gain, gate sweep characteristics and sub-threshold sweep characteristics are measured after each exposure. The results indicate that under the sequential irradiation of gamma rays and neutrons, the response of the gate-controlled lateral PNP bipolar transistor does exhibit ionizing/displacement synergistic effects and base current degradation is more severe than the simple artificial sum of those under the individual gamma and neutron irradiation. Enough attention should be paid to this phenomenon in radiation damage evaluation. - Highlights: • A kind of gate-controlled lateral PNP bipolar transistor has been specially designed to facilitate the analysis of ionizing/displacement synergistic effects induced by the mixed irradiation of gamma and neutron. • The difference between ionizing/displacement synergistic effects and the simple sum of TID and displacement effects is analyzed. • The physical mechanisms of synergistic effects are explained.

  20. Highly Conductive Graphene/Ag Hybrid Fibers for Flexible Fiber-Type Transistors.

    Science.gov (United States)

    Yoon, Sang Su; Lee, Kang Eun; Cha, Hwa-Jin; Seong, Dong Gi; Um, Moon-Kwang; Byun, Joon-Hyung; Oh, Youngseok; Oh, Joon Hak; Lee, Wonoh; Lee, Jea Uk

    2015-11-09

    Mechanically robust, flexible, and electrically conductive textiles are highly suitable for use in wearable electronic applications. In this study, highly conductive and flexible graphene/Ag hybrid fibers were prepared and used as electrodes for planar and fiber-type transistors. The graphene/Ag hybrid fibers were fabricated by the wet-spinning/drawing of giant graphene oxide and subsequent functionalization with Ag nanoparticles. The graphene/Ag hybrid fibers exhibited record-high electrical conductivity of up to 15,800 S cm(-1). As the graphene/Ag hybrid fibers can be easily cut and placed onto flexible substrates by simply gluing or stitching, ion gel-gated planar transistors were fabricated by using the hybrid fibers as source, drain, and gate electrodes. Finally, fiber-type transistors were constructed by embedding the graphene/Ag hybrid fiber electrodes onto conventional polyurethane monofilaments, which exhibited excellent flexibility (highly bendable and rollable properties), high electrical performance (μh = 15.6 cm(2) V(-1) s(-1), Ion/Ioff > 10(4)), and outstanding device performance stability (stable after 1,000 cycles of bending tests and being exposed for 30 days to ambient conditions). We believe that our simple methods for the fabrication of graphene/Ag hybrid fiber electrodes for use in fiber-type transistors can potentially be applied to the development all-organic wearable devices.

  1. Perception of 3-D location based on vision, touch, and extended touch.

    Science.gov (United States)

    Giudice, Nicholas A; Klatzky, Roberta L; Bennett, Christopher R; Loomis, Jack M

    2013-01-01

    Perception of the near environment gives rise to spatial images in working memory that continue to represent the spatial layout even after cessation of sensory input. As the observer moves, these spatial images are continuously updated. This research is concerned with (1) whether spatial images of targets are formed when they are sensed using extended touch (i.e., using a probe to extend the reach of the arm) and (2) the accuracy with which such targets are perceived. In Experiment 1, participants perceived the 3-D locations of individual targets from a fixed origin and were then tested with an updating task involving blindfolded walking followed by placement of the hand at the remembered target location. Twenty-four target locations, representing all combinations of two distances, two heights, and six azimuths, were perceived by vision or by blindfolded exploration with the bare hand, a 1-m probe, or a 2-m probe. Systematic errors in azimuth were observed for all targets, reflecting errors in representing the target locations and updating. Overall, updating after visual perception was best, but the quantitative differences between conditions were small. Experiment 2 demonstrated that auditory information signifying contact with the target was not a factor. Overall, the results indicate that 3-D spatial images can be formed of targets sensed by extended touch and that perception by extended touch, even out to 1.75 m, is surprisingly accurate.

  2. The virtual Midas touch : helping behavior after a mediated social touch

    NARCIS (Netherlands)

    Haans, A.; IJsselsteijn, W.A.; Graus, M.P.; Salminen, J.A.

    2008-01-01

    A brief touch on the upper arm increases people's altruistic behavior and willingness to comply to a request. In this paper, we investigate whether this Midas Touch effect would also occur under mediated conditions (i.e., a text messaging system and an arm strap equipped with vibrotactile

  3. Transistor analogs of emergent iono-neuronal dynamics.

    Science.gov (United States)

    Rachmuth, Guy; Poon, Chi-Sang

    2008-06-01

    Neuromorphic analog metal-oxide-silicon (MOS) transistor circuits promise compact, low-power, and high-speed emulations of iono-neuronal dynamics orders-of-magnitude faster than digital simulation. However, their inherently limited input voltage dynamic range vs power consumption and silicon die area tradeoffs makes them highly sensitive to transistor mismatch due to fabrication inaccuracy, device noise, and other nonidealities. This limitation precludes robust analog very-large-scale-integration (aVLSI) circuits implementation of emergent iono-neuronal dynamics computations beyond simple spiking with limited ion channel dynamics. Here we present versatile neuromorphic analog building-block circuits that afford near-maximum voltage dynamic range operating within the low-power MOS transistor weak-inversion regime which is ideal for aVLSI implementation or implantable biomimetic device applications. The fabricated microchip allowed robust realization of dynamic iono-neuronal computations such as coincidence detection of presynaptic spikes or pre- and postsynaptic activities. As a critical performance benchmark, the high-speed and highly interactive iono-neuronal simulation capability on-chip enabled our prompt discovery of a minimal model of chaotic pacemaker bursting, an emergent iono-neuronal behavior of fundamental biological significance which has hitherto defied experimental testing or computational exploration via conventional digital or analog simulations. These compact and power-efficient transistor analogs of emergent iono-neuronal dynamics open new avenues for next-generation neuromorphic, neuroprosthetic, and brain-machine interface applications.

  4. Developing Mixed Reality Educational Applications: The Virtual Touch Toolkit

    Directory of Open Access Journals (Sweden)

    Juan Mateu

    2015-08-01

    Full Text Available In this paper, we present Virtual Touch, a toolkit that allows the development of educational activities through a mixed reality environment such that, using various tangible elements, the interconnection of a virtual world with the real world is enabled. The main goal of Virtual Touch is to facilitate the installation, configuration and programming of different types of technologies, abstracting the creator of educational applications from the technical details involving the use of tangible interfaces and virtual worlds. Therefore, it is specially designed to enable teachers to themselves create educational activities for their students in a simple way, taking into account that teachers generally lack advanced knowledge in computer programming and electronics. The toolkit has been used to develop various educational applications that have been tested in two secondary education high schools in Spain.

  5. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits.

    Science.gov (United States)

    Larentis, Stefano; Fallahazad, Babak; Movva, Hema C P; Kim, Kyounghwan; Rai, Amritesh; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K; Tutuc, Emanuel

    2017-05-23

    Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material has hindered the development of complementary field-effect transistors and circuits. We demonstrate an air-stable, reconfigurable, complementary monolayer MoTe 2 field-effect transistor encapsulated in hexagonal boron nitride, using electrostatically doped contacts. The introduction of a multigate design with prepatterned bottom contacts allows us to independently achieve low contact resistance and threshold voltage tuning, while also decoupling the Schottky contacts and channel gating. We illustrate a complementary inverter and a p-i-n diode as potential applications.

  6. Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

    KAUST Repository

    Tian, He

    2014-08-11

    Recently, two-dimensional materials such as molybdenum disulphide (MoS 2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.

  7. Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

    Science.gov (United States)

    Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

    2014-01-01

    Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5–20 cm2/V·s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V·s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics. PMID:25109609

  8. Bipolar Transistors Can Detect Charge in Electrostatic Experiments

    Science.gov (United States)

    Dvorak, L.

    2012-01-01

    A simple charge indicator with bipolar transistors is described that can be used in various electrostatic experiments. Its behaviour enables us to elucidate links between 'static electricity' and electric currents. In addition it allows us to relate the sign of static charges to the sign of the terminals of an ordinary battery. (Contains 7 figures…

  9. Experiments with Charge Indicator Based on Bipolar Transistors

    Science.gov (United States)

    Dvorak, Leos; Planinsic, Gorazd

    2012-01-01

    A simple charge indicator with bipolar transistors described recently enables us to perform a number of experiments suitable for high-school physics. Several such experiments are presented and discussed in this paper as well as some features of the indicator important for its use in schools, namely its sensitivity and robustness, i.e. the…

  10. Touch Processing and Social Behavior in ASD

    Science.gov (United States)

    Miguel, Helga O.; Sampaio, Adriana; Martínez-Regueiro, Rocío; Gómez-Guerrero, Lorena; López-Dóriga, Cristina Gutiérrez; Gómez, Sonia; Carracedo, Ángel; Fernández-Prieto, Montse

    2017-01-01

    Abnormal patterns of touch processing have been linked to core symptoms in ASD. This study examined the relation between tactile processing patterns and social problems in 44 children and adolescents with ASD, aged 6-14 (M = 8.39 ± 2.35). Multiple linear regression indicated significant associations between touch processing and social problems. No…

  11. Air-stable complementary-like circuits based on organic ambipolar transistors

    NARCIS (Netherlands)

    Anthopoulos, Thomas D.; Setayesh, Sepas; Smits, Edsger; Cantatore, Eugenio; Boer ,de Bert; Blom, Paul W. M.; de Leeuw, Dago M.; Cölle, Michael

    2006-01-01

    Air stable complementary-like circuits, such as voltage inverters (see figure) and ring oscillators, are fabricated using ambipolar organic transistors based on a nickel dithiolene derivative. In addition to the complementary-like character of the circuits, the technology is very simple and fully

  12. Kinaesthesia and Touching Reality

    Directory of Open Access Journals (Sweden)

    Roger Smith

    2014-10-01

    Full Text Available This article outlines the philosophical and historical background to nineteenth-century belief that the touch sense, specifically including kinaesthesia, gives special, or uniquely deep, access to the world. The argument associates touch with life itself. Victorian writers also tied the sense of movement and touch to an understanding of causation and the world as a system of forces. The conclusion points to the possible significance of the arguments for the modernist arts, especially dance.

  13. U Can Touch This: How Tablets Can Be Used to Study Cognitive Development.

    Science.gov (United States)

    Semmelmann, Kilian; Nordt, Marisa; Sommer, Katharina; Röhnke, Rebecka; Mount, Luzie; Prüfer, Helen; Terwiel, Sophia; Meissner, Tobias W; Koldewyn, Kami; Weigelt, Sarah

    2016-01-01

    New technological devices, particularly those with touch screens, have become virtually omnipresent over the last decade. Practically from birth, children are now surrounded by smart phones and tablets. Despite being our constant companions, little is known about whether these tools can be used not only for entertainment, but also to collect reliable scientific data. Tablets may prove particularly useful for collecting behavioral data from those children (1-10 years), who are, for the most part, too old for studies based on looking times and too young for classical psychophysical testing. Here, we analyzed data from six studies that utilized touch screen tablets to deliver experimental paradigms in developmental psychology. In studies 1 and 2, we employed a simple sorting and recall task with children from the ages of 2-8. Study 3 (ages 9 and 10) extended these tasks by increasing the difficulty of the stimuli and adding a staircase-based perception task. A visual search paradigm was used in study 4 (ages 2-5), while 1- to 3-year-olds were presented with an extinction learning task in study 5. In study 6, we used a simple visuo-spatial paradigm to obtain more details about the distribution of reaction times on touch screens over all ages. We collected data from adult participants in each study as well, for comparison purposes. We analyzed these data sets in regard to four metrics: self-reported tablet usage, completeness of data, accuracy of responses and response times. In sum, we found that children from the age of two onwards are very capable of interacting with tablets, are able to understand the respective tasks and are able to use tablets to register their answers accordingly. Results from all studies reiterated the advantages of data collection through tablets: ease of use, high portability, low-cost, and high levels of engagement for children. We illustrate the great potential of conducting psychological studies in young children using tablets, and also

  14. Characterization of a power bipolar transistor as high-dose dosimeter for 1.9-2.2 MeV electron beams

    Energy Technology Data Exchange (ETDEWEB)

    Fuochi, P.G., E-mail: fuochi@isof.cnr.i [ISOF-CNR Institute, Via P. Gobetti 101, I-40129, Bologna (Italy); Lavalle, M.; Corda, U. [ISOF-CNR Institute, Via P. Gobetti 101, I-40129, Bologna (Italy); Kuntz, F.; Plumeri, S. [Aerial, Parc d' Innovation Rue Laurent Fries F-67400 Illkirch (France); Gombia, E. [IMEM-CNR Institute, Viale delle Scienze 37 A, Loc. Fontanini, 43010 Parma (Italy)

    2010-04-15

    Results of the characterization studies on a power bipolar transistor investigated as a possible radiation dosimeter under laboratory condition using electron beams of energies from 2.2 to 8.6 MeV and gamma rays from a {sup 60}Co source and tested in industrial irradiation plants having high-activity {sup 60}Co gamma-source and high-energy, high-power electron beam have previously been reported. The present paper describes recent studies performed on this type of bipolar transistor irradiated with 1.9 and 2.2 MeV electron beams in the dose range 5-50 kGy. Dose response, post-irradiation heat treatment and stability, effects of temperature during irradiation in the range from -104 to +22 deg. C, dependence on temperature during reading in the range 20-50 deg. C, and the difference in response of the transistors irradiated from the plastic side and the copper side are reported. DLTS measurements performed on the irradiated devices to identify the recombination centres introduced by radiation and their dependence on dose and energy of the electron beam are also reported.

  15. Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

    KAUST Repository

    Han, Yang

    2018-03-13

    Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

  16. Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

    KAUST Repository

    Han, Yang; Fei, Zhuping; Lin, Yen-Hung; Martin, Jaime; Tuna, Floriana; Anthopoulos, Thomas D.; Heeney, Martin

    2018-01-01

    Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

  17. Touch screens as a tool in patient care in the IBD outpatient clinic.

    Science.gov (United States)

    Larsen, Lone; Drewes, Asbjørn Mohr; Fallingborg, Jan; Jacobsen, Bent Ascanius; Jess, Tine

    2016-09-01

    We have introduced online touch screens in the waiting room for patients with ulcerative colitis (UC) or Crohn's disease (CD) for recording of symptoms before their consultation. This has made disease activity scores readily available to the physician in our newly established database, 'Gastrobio'. We wanted to validate the use of touch screens compared to paper questionnaires. A total of 54 patients with UC and 74 patients with CD were included in the study. The UC patients filled out the Short Health Scale (SHS) and Simple Clinical Colitis Activity Index (SSCAI). The CD patients filled out the SHS and Harvey-Bradshaw Index (HBI). Paper questionnaires and touch screen versions were used in random order and comparison between the two modalities was made by Spearman correlation test, Bland-Altman plots, and Kappa-statistics. Among the 128 patients, the two SHS scores (SHS touch versus SHS paper) were found to be highly correlated (Spearman correlation; 0.92 for UC and 0.92 for CD). Also, on average, Bland-Altman plots demonstrated a difference close to zero between the two modalities. Agreement between paper version and touch screen version of SCCAI and HBI scores was also high (Kappa-statistics; 78% raw and 98% weighted for SCCAI; 65% raw and 97% weighted for HBI). It is feasible to introduce touch screens in the outpatient clinic and to have patients record their symptoms before the consultation. However, the study may not be representative for elderly patients.

  18. Human Figure Drawings and Children’s Recall of Touching

    Science.gov (United States)

    Bruck, Maggie

    2010-01-01

    In 2 studies, children ages 3 to 7 years were asked to recall a series of touches that occurred during a previous staged event. The recall interview took place 1 week after the event in Study 1 and immediately after the event in Study 2. Each recall interview had 2 sections: In 1 section, children were given human figure drawings (HFDs) and were asked to show where the touching took place; in the other section, the same questions were asked without the HFDs (verbal condition). Children were randomly assigned to 2 different conditions: HFD 1st/verbal 2nd or verbal 1st/HFD 2nd. There were 2 major findings. First, HFDs elicited more errors than the verbal condition when used to probe for information that the child had already been asked. Second, regardless of interview method, children had poor recall of the touches even when these occurred minutes before the interview. It is suggested that cognitive mechanisms involving memory and semantics underlie children’s poor recall of touching in both verbal and HFD conditions. PMID:20025421

  19. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

    KAUST Repository

    Lin, Yen-Hung; Faber, Hendrik; Labram, John G.; Stratakis, Emmanuel; Sygellou, Labrini; Kymakis, Emmanuel; Hastas, Nikolaos A.; Li, Ruipeng; Zhao, Kui; Amassian, Aram; Treat, Neil D.; McLachlan, Martyn; Anthopoulos, Thomas D.

    2015-01-01

    High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

  20. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

    KAUST Repository

    Lin, Yen-Hung

    2015-05-26

    High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

  1. Remarkable Enhancement of the Hole Mobility in Several Organic Small‐Molecules, Polymers, and Small‐Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid p‐Dopant B(C6F5)3

    Science.gov (United States)

    Panidi, Julianna; Paterson, Alexandra F.; Khim, Dongyoon; Fei, Zhuping; Han, Yang; Tsetseris, Leonidas; Vourlias, George; Patsalas, Panos A.; Heeney, Martin

    2017-01-01

    Abstract Improving the charge carrier mobility of solution‐processable organic semiconductors is critical for the development of advanced organic thin‐film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small‐molecules, polymers, and small‐molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C6F5)3 in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C6F5)3 is shown to have a remarkable impact are the blends of 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF‐TESADT:PTAA) and 2,7‐dioctyl[1]‐benzothieno[3,2‐b][1]benzothiophene:poly(indacenodithiophene‐co‐benzothiadiazole) (C8‐BTBT:C16‐IDTBT), for which hole mobilities of 8 and 11 cm2 V−1 s−1, respectively, are obtained. Doping of the 6,13‐bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C6F5)3 is also shown to increase the maximum hole mobility to 3.7 cm2 V−1 s−1. Analysis of the single and multicomponent materials reveals that B(C6F5)3 plays a dual role, first acting as an efficient p‐dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p‐doping and dopant‐induced long‐range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics. PMID:29375962

  2. Physiological Effects of Touching Wood

    Directory of Open Access Journals (Sweden)

    Harumi Ikei

    2017-07-01

    Full Text Available This study aimed to clarify the physiological effects of touching wood with the palm, in comparison with touching other materials on brain activity and autonomic nervous activity. Eighteen female university students (mean age, 21.7  ±  1.6 years participated in the study. As an indicator of brain activity, oxyhemoglobin (oxy-Hb concentrations were measured in the left/right prefrontal cortex using near-infrared time-resolved spectroscopy. Heart rate variability (HRV was used as an indicator of autonomic nervous activity. The high-frequency (HF component of HRV, which reflected parasympathetic nervous activity, and the low-frequency (LF/HF ratio, which reflected sympathetic nervous activity, were measured. Plates of uncoated white oak, marble, tile, and stainless steel were used as tactile stimuli. After sitting at rest with their eyes closed, participants touched the materials for 90 s. As a result, tactile stimulation with white oak significantly (1 decreased the oxy-Hb concentration in the left/right prefrontal cortex relative to marble, tile, and stainless steel and (2 increased ln(HF-reflected parasympathetic nervous activity relative to marble and stainless steel. In conclusion, our study revealed that touching wood with the palm calms prefrontal cortex activity and induces parasympathetic nervous activity more than other materials, thereby inducing physiological relaxation.

  3. The impact of silicon nano-wire technology on the design of single-work-function CMOS transistors and circuits

    International Nuclear Information System (INIS)

    Bindal, Ahmet; Hamedi-Hagh, Sotoudeh

    2006-01-01

    This three-dimensional exploratory study on vertical silicon wire MOS transistors with metal gates and undoped bodies demonstrates that these transistors dissipate less power and occupy less layout area while producing comparable transient response with respect to the state-of-the-art bulk and SOI technologies. The study selects a single metal gate work function for both NMOS and PMOS transistors to alleviate fabrication difficulties and then determines a common device geometry to produce an OFF current smaller than 1 pA for each transistor. Once an optimum wire radius and effective channel length is determined, DC characteristics including threshold voltage roll-off, drain-induced barrier lowering and sub-threshold slope of each transistor are measured. Simple CMOS gates such as an inverter, two- and three-input NAND, NOR and XOR gates and a full adder, composed of the optimum NMOS and PMOS transistors, are built to measure transient performance, power dissipation and layout area. Simulation results indicate that worst-case transient time and worst-case delay are 1.63 and 1.46 ps, respectively, for a two-input NAND gate and 7.51 and 7.43 ps, respectively, for a full adder for a fan-out of six transistor gates (24 aF). Worst-case power dissipation is 62.1 nW for a two-input NAND gate and 118.1 nW for a full adder at 1 GHz for the same output capacitance. The layout areas are 0.0066 μm 2 for the two-input NAND gate and 0.049 μm 2 for the full adder circuits

  4. Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

    Science.gov (United States)

    Ilatikhameneh, Hesameddin; Tan, Yaohua; Novakovic, Bozidar; Klimeck, Gerhard; Rahman, Rajib; Appenzeller, Joerg

    2015-12-01

    In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2D material based TFETs can have tight gate control and high electric fields at the tunnel junction, and can in principle generate high ON-currents along with a sub-threshold swing smaller than 60 mV/dec. Our simulations reveal that high performance TMD TFETs, not only require good gate control, but also rely on the choice of the right channel material with optimum band gap, effective mass and source/drain doping level. Unlike previous works, a full band atomistic tight binding method is used self-consistently with 3D Poisson equation to simulate ballistic quantum transport in these devices. The effect of the choice of TMD material on the performance of the device and its transfer characteristics are discussed. Moreover, the criteria for high ON-currents are explained with a simple analytic model, showing the related fundamental factors. Finally, the subthreshold swing and energy-delay of these TFETs are compared with conventional CMOS devices.

  5. Three-dimensional touch interface for medical education.

    Science.gov (United States)

    Panchaphongsaphak, Bundit; Burgkart, Rainer; Riener, Robert

    2007-05-01

    We present the technical principle and evaluation of a multimodal virtual reality (VR) system for medical education, called a touch simulator. This touch simulator comes with an innovative three-dimensional (3-D) touch sensitive input device. The device comprises a six-axis force-torque sensor connected to a tangible object representing the shape of an anatomical structure. Information related to the point of contact is recorded by the sensor, processed, and audiovisually displayed. The touch simulator provides a high level of user-friendliness and fidelity compared to other purely graphically oriented simulation environments. In this paper, the touch simulator has been realized as an interactive neuroanatomical training simulator. The user can visualize and manipulate graphical information of the brain surface or different cross-sectional slices by a finger-touch on a brain-like shaped tangible object. We evaluated the system by theoretical derivations, experiments, and subjective questionnaires. In the theoretical analysis, we could show that the contact point estimation error mainly depends on the accuracy and the noise of the sensor, the amount and direction of the applied force, and the geometry of the tangible object. The theoretical results could be validated by experiments: applying a normal force of 10 N on a 120 mm x 120 mm x 120 mm cube causes a maximum error of 2.5 +/- 0.7 mm. This error becomes smaller when increasing the contact force. Based on the survey results, the touch simulator may be a useful tool for assisting medical schools in the visualization of brain image data and the study of neuroanatomy.

  6. Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phase

    International Nuclear Information System (INIS)

    Busch, C.; Schierning, G.; Theissmann, R.; Nedic, A.; Kruis, F. E.; Schmechel, R.

    2012-01-01

    The fabrication of semiconducting functional layers using low-temperature processes is of high interest for flexible printable electronics applications. Here, the one-step deposition of semiconducting nanoparticles from the gas phase for an active layer within a thin-film transistor is described. Layers of semiconducting nanoparticles with a particle size between 10 and 25 nm were prepared by the use of a simple aerosol deposition system, excluding potentially unwanted technological procedures like substrate heating or the use of solvents. The nanoparticles were deposited directly onto standard thin-film transistor test devices, using thermally grown silicon oxide as gate dielectric. Proof-of-principle experiments were done deploying two different wide-band gap semiconducting oxides, tin oxide, SnO x , and indium oxide, In 2 O 3 . The tin oxide spots prepared from the gas phase were too conducting to be used as channel material in thin-film transistors, most probably due to a high concentration of oxygen defects. Using indium oxide nanoparticles, thin-film transistor devices with significant field effect were obtained. Even though the electron mobility of the investigated devices was only in the range of 10 −6 cm 2V−1s−1 , the operability of this method for the fabrication of transistors was demonstrated. With respect to the possibilities to control the particle size and layer morphology in situ during deposition, improvements are expected.

  7. iPod touch-assisted instrumentation of the spine: a technical report.

    Science.gov (United States)

    Jost, Gregory F; Bisson, Erica F; Schmidt, Meic H

    2013-12-01

    Instrumentation of the spine depends on choosing the correct insertion angles to implant screws. Although modern image guidance facilitates precise instrumentation of the spine, the equipment is costly and availability is limited. Although most surgeons use lateral fluoroscopy to guide instrumentation in the sagittal plane, the lateromedial angulation is often chosen by estimation. To overcome the associated uncertainty, iPod touch-based applications for measuring angles can be used to assist with screw implantation. To evaluate the use of the iPod touch to adjust instruments to the optimal axial insertion angle for placement of pedicle screws in the lumbar spine. Twenty lumbar pedicle screws in 5 consecutive patients were implanted using the iPod touch. The lateromedial angulation was measured on preoperative images and reproduced in the operative field with the iPod touch. The instruments to implant the screws were aligned with the side of the iPod for screw insertion. Actual screw angles were remeasured on postoperative imaging. We collected demographic, clinical, and operative data for each patient. In 16 of 20 screws, the accuracy of implantation was within 3 degrees of the ideal trajectory. The 4 screws with an angle mismatch of 7 to 13 degrees were all implanted at the caudal end of the exposure, where maintaining the planned angulation was impeded by strong muscles pushing medially. iPod touch-assisted instrumentation of the spine is a very simple technique, which, in combination with a lateral fluoroscopy, may guide placement of pedicle screws in the lumbar spine.

  8. Low-background transistors for application in nuclear electronics

    International Nuclear Information System (INIS)

    Krasnokutskij, R.N.; Kurchaninov, L.L.; Fedyakin, N.N.; Shuvalov, R.S.

    1988-01-01

    Investigations of silicon transistors were carried out to determine transistors with low value of base distributed resistance (R). Measurement results for R and current amplification coefficient β are presented for bipolar transistor several types. Correlations between R and β were studied. KT 399A, 2T640A and KT3117B transistors are found to be most adequate ones as a base for low-background amplifier development

  9. A simple ionizing radiation spectrometer/dosimeter based on radiation sensing field effect transistors (RadFETs)

    International Nuclear Information System (INIS)

    Moreno, D.J.; Hughes, R.C.; Jenkins, M.W.; Drumm, C.R.

    1997-01-01

    This paper reports on the processing steps in a silicon foundry leading to improved performance of the Radiation Sensing Field Effect Transistor (RadFET) and the use of multiple RadFETs in a handheld, battery operated, combination spectrometer/dosimeter

  10. TouchWB : Touch behavioral user authentication based on web browsing on smartphones

    DEFF Research Database (Denmark)

    Meng, Weizhi; Wang, Yu; Wong, Duncan S.

    2018-01-01

    browsing gestures. For evaluation, we implemented the scheme on Android phones and conducted a user study involving 48 participants. Experimental results demonstrated that our approach could reduce the touch behavioral deviation by nearly half and achieve an average error rate of about 2.4% by using...

  11. Simple method to enhance positive bias stress stability of In-Ga-Zn-O thin-film transistors using a vertically graded oxygen-vacancy active layer.

    Science.gov (United States)

    Park, Ji Hoon; Kim, Yeong-Gyu; Yoon, Seokhyun; Hong, Seonghwan; Kim, Hyun Jae

    2014-12-10

    We proposed a simple method to deposit a vertically graded oxygen-vacancy active layer (VGA) to enhance the positive bias stress (PBS) stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). We deposited a-IGZO films by sputtering (target composition; In2O3:Ga2O3:ZnO = 1:1:1 mol %), and the oxygen partial pressure was varied during deposition so that the front channel of the TFTs was fabricated with low oxygen partial pressure and the back channel with high oxygen partial pressure. Using this method, we were able to control the oxygen vacancy concentration of the active layer so that it varied with depth. As a result, the turn-on voltage shift following a 10 000 s PBS of optimized VGA TFT was drastically improved from 12.0 to 5.6 V compared with a conventional a-IGZO TFT, without a significant decrease in the field effect mobility. These results came from the self-passivation effect and decrease in oxygen-vacancy-related trap sites of the VGA TFTs.

  12. Bacterial contamination of computer touch screens.

    Science.gov (United States)

    Gerba, Charles P; Wuollet, Adam L; Raisanen, Peter; Lopez, Gerardo U

    2016-03-01

    The goal of this study was to determine the occurrence of opportunistic bacterial pathogens on the surfaces of computer touch screens used in hospitals and grocery stores. Opportunistic pathogenic bacteria were isolated on touch screens in hospitals; Clostridium difficile and vancomycin-resistant Enterococcus and in grocery stores; methicillin-resistant Staphylococcus aureus. Enteric bacteria were more common on grocery store touch screens than on hospital computer touch screens. Published by Elsevier Inc.

  13. TOUCH, TOUCH, TOUCH, SENSORIAL COGNITIVE SKILLS SENSITIZED THROUGH TACTILITY AND TANGIBILITY

    NARCIS (Netherlands)

    Wendrich, Robert E.

    2018-01-01

    This paper presents the development and testing of an original user interface ()UI) based on the sense of touch. A tangible user interface (TUI) project that includes the exploration of haptics, design processes, hybrid design tools and unconventional user interfaces (NUI) that focus essentially on

  14. The Complete Semiconductor Transistor and Its Incomplete Forms

    International Nuclear Information System (INIS)

    Jie Binbin; Sah, C.-T.

    2009-01-01

    This paper describes the definition of the complete transistor. For semiconductor devices, the complete transistor is always bipolar, namely, its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions. Partially complete or incomplete transistors, via coined names or/and designed physical geometries, included the 1949 Shockley p/n junction transistor (later called Bipolar Junction Transistor, BJT), the 1952 Shockley unipolar 'field-effect' transistor (FET, later called the p/n Junction Gate FET or JGFET), as well as the field-effect transistors introduced by later investigators. Similarities between the surface-channel MOS-gate FET (MOSFET) and the volume-channel BJT are illustrated. The bipolar currents, identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base, led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices, and also the importance of the terminal contacts.

  15. Thermal Molding of Organic Thin-Film Transistor Arrays on Curved Surfaces.

    Science.gov (United States)

    Sakai, Masatoshi; Watanabe, Kento; Ishimine, Hiroto; Okada, Yugo; Yamauchi, Hiroshi; Sadamitsu, Yuichi; Kudo, Kazuhiro

    2017-12-01

    In this work, a thermal molding technique is proposed for the fabrication of plastic electronics on curved surfaces, enabling the preparation of plastic films with freely designed shapes. The induced strain distribution observed in poly(ethylene naphthalate) films when planar sheets were deformed into hemispherical surfaces clearly indicated that natural thermal contraction played an important role in the formation of the curved surface. A fingertip-shaped organic thin-film transistor array molded from a real human finger was fabricated, and slight deformation induced by touching an object was detected from the drain current response. This type of device will lead to the development of robot fingers equipped with a sensitive tactile sense for precision work such as palpation or surgery.

  16. Quantum engineering of transistors based on 2D materials heterostructures

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  17. Quantum engineering of transistors based on 2D materials heterostructures.

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  18. Soft-type trap-induced degradation of MoS2 field effect transistors

    Science.gov (United States)

    Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

    2018-06-01

    The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation–correlated mobility fluctuation (CNF–CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF–CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

  19. High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

    Science.gov (United States)

    Lin, Yen‐Hung; Faber, Hendrik; Labram, John G.; Stratakis, Emmanuel; Sygellou, Labrini; Kymakis, Emmanuel; Hastas, Nikolaos A.; Li, Ruipeng; Zhao, Kui; Amassian, Aram; Treat, Neil D.; McLachlan, Martyn

    2015-01-01

    High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensional polycrystalline heterojunctions and quasi‐superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band‐like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature‐dependent electron transport and capacitance‐voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas‐like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll‐to‐roll, etc.) and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement. PMID:27660741

  20. CMOS Active-Pixel Image Sensor With Simple Floating Gates

    Science.gov (United States)

    Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

    1996-01-01

    Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

  1. Social touch technology : extending the reach of social touch through haptic technology

    NARCIS (Netherlands)

    Huisman, Gijs

    2017-01-01

    The skin not only protects the body from harm but, through receptors found in the skin, also enables the sense of touch. The sense of touch is used to obtain information about the world outside the body, for example, the shape and weight of a book or the texture of its cover. However, the sense of

  2. Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

    KAUST Repository

    Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

    2014-01-01

    0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced

  3. Screen printing as a scalable and low-cost approach for rigid and flexible thin-film transistors using separated carbon nanotubes.

    Science.gov (United States)

    Cao, Xuan; Chen, Haitian; Gu, Xiaofei; Liu, Bilu; Wang, Wenli; Cao, Yu; Wu, Fanqi; Zhou, Chongwu

    2014-12-23

    Semiconducting single-wall carbon nanotubes are very promising materials in printed electronics due to their excellent mechanical and electrical property, outstanding printability, and great potential for flexible electronics. Nonetheless, developing scalable and low-cost approaches for manufacturing fully printed high-performance single-wall carbon nanotube thin-film transistors remains a major challenge. Here we report that screen printing, which is a simple, scalable, and cost-effective technique, can be used to produce both rigid and flexible thin-film transistors using separated single-wall carbon nanotubes. Our fully printed top-gated nanotube thin-film transistors on rigid and flexible substrates exhibit decent performance, with mobility up to 7.67 cm2 V(-1) s(-1), on/off ratio of 10(4)∼10(5), minimal hysteresis, and low operation voltage (transistors (bent with radius of curvature down to 3 mm) and driving capability for organic light-emitting diode have been demonstrated. Given the high performance of the fully screen-printed single-wall carbon nanotube thin-film transistors, we believe screen printing stands as a low-cost, scalable, and reliable approach to manufacture high-performance nanotube thin-film transistors for application in display electronics. Moreover, this technique may be used to fabricate thin-film transistors based on other materials for large-area flexible macroelectronics, and low-cost display electronics.

  4. High-Performance Vertical Organic Electrochemical Transistors.

    Science.gov (United States)

    Donahue, Mary J; Williamson, Adam; Strakosas, Xenofon; Friedlein, Jacob T; McLeod, Robert R; Gleskova, Helena; Malliaras, George G

    2018-02-01

    Organic electrochemical transistors (OECTs) are promising transducers for biointerfacing due to their high transconductance, biocompatibility, and availability in a variety of form factors. Most OECTs reported to date, however, utilize rather large channels, limiting the transistor performance and resulting in a low transistor density. This is typically a consequence of limitations associated with traditional fabrication methods and with 2D substrates. Here, the fabrication and characterization of OECTs with vertically stacked contacts, which overcome these limitations, is reported. The resulting vertical transistors exhibit a reduced footprint, increased intrinsic transconductance of up to 57 mS, and a geometry-normalized transconductance of 814 S m -1 . The fabrication process is straightforward and compatible with sensitive organic materials, and allows exceptional control over the transistor channel length. This novel 3D fabrication method is particularly suited for applications where high density is needed, such as in implantable devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Effect of touch screen button size and spacing on touch characteristics of users with and without disabilities.

    Science.gov (United States)

    Sesto, Mary E; Irwin, Curtis B; Chen, Karen B; Chourasia, Amrish O; Wiegmann, Douglas A

    2012-06-01

    The aim of this study was to investigate the effect of button size and spacing on touch characteristics (forces, impulses, and dwell times) during a digit entry touch screen task. A secondary objective was to investigate the effect of disability on touch characteristics. Touch screens are common in public settings and workplaces. Although research has examined the effect of button size and spacing on performance, the effect on touch characteristics is unknown. A total of 52 participants (n = 23, fine motor control disability; n = 14, gross motor control disability; n = 15, no disability) completed a digit entry task. Button sizes varied from 10 mm to 30 mm, and button spacing was 1 mm or 3 mm. Touch characteristics were significantly affected by button size. The exerted peak forces increased 17% between the largest and the smallest buttons, whereas impulses decreased 28%. Compared with the fine motor and nondisabled groups, the gross motor group had greater impulses (98% and 167%, respectively) and dwell times (60% and 129%, respectively). Peak forces were similar for all groups. Button size but not spacing influenced touch characteristics during a digit entry task. The gross motor group had significantly greater dwell times and impulses than did the fine motor and nondisabled groups. Research on touch characteristics, in conjunction with that on user performance, can be used to guide human computer interface design strategies to improve accessibility of touch screen interfaces. Further research is needed to evaluate the effect of the exerted peak forces and impulses on user performance and fatigue.

  6. Touch for Socioemotional and Physical Well-Being: A Review

    Science.gov (United States)

    Field, Tiffany

    2010-01-01

    This review briefly summarizes recent empirical research on touch. The research includes the role of touch in early development, touch deprivation, touch aversion, emotions that can be conveyed by touch, the importance of touch for interpersonal relationships and how friendly touch affects compliance in different situations. MRI data are reviewed…

  7. Merkel cells and neurons keep in touch

    Science.gov (United States)

    Woo, Seung-Hyun; Lumpkin, Ellen A.; Patapoutian, Ardem

    2014-01-01

    The Merkel cell-neurite complex is a unique vertebrate touch receptor comprising two distinct cell types in the skin. Its presence in touch-sensitive skin areas was recognized more than a century ago, but the functions of each cell type in sensory transduction have been unclear. Three recent studies demonstrate that Merkel cells are mechanosensitive cells that function in touch transduction via Piezo2. One study concludes that Merkel cells rather than sensory neurons are principal sites of mechanotransduction, whereas the other two studies report that both Merkel cells and neurons encode mechanical inputs. Together, these studies settle a longstanding debate on whether Merkel cells are mechanosensory cells, and enable future investigations of how these skin cells communicate with neurons. PMID:25480024

  8. Instructor Touch Enhanced College Students' Evaluations

    Science.gov (United States)

    Legg, Angela M.; Wilson, Janie H.

    2013-01-01

    Touch between people is associated with several outcomes, including reduced stress, more positive mood, enhanced feelings of closeness, and positive behavioral change. However, the potential utility of touch rarely has been examined in a college sample, with teachers touching their students. In the present study, we used instrumental touch…

  9. User Authentication based on Continuous Touch Biometrics

    Directory of Open Access Journals (Sweden)

    Christina J Kroeze

    2016-12-01

    Full Text Available Mobile devices such as smartphones have until now been protected by traditional authentication methods, including passwords or pattern locks. These authentication mechanisms are difficult to remember and are often disabled, leaving the device vulnerable if stolen. This paper investigates the possibility of unobtrusive, continuous authentication for smartphones based on biometric data collected using a touchscreen. The possibility of authenticating users on a smartphone was evaluated by conducting an experiment simulating real-world touch interaction. Touch data was collected from 30 participants during normal phone use. The touch features were analysed in terms of the information provided for authentication. It was found that features such as finger pressure, location of touch interaction and shape of the finger were important discriminators for authentication. The touch data was also analysed using two classification algorithms to measure the authentication accuracy. The results show that touch data is sufficiently distinct between users to be used in authentication without disrupting normal touch interaction. It is also shown that the raw touch data was more effective in authentication than the aggregated gesture data.

  10. Touch increases autonomic coupling between romantic partners

    Directory of Open Access Journals (Sweden)

    Jonas eChatel-Goldman

    2014-03-01

    Full Text Available Interpersonal touch is of paramount importance in human social bonding and close relationships, allowing a unique channel for affect communication. So far the effect of touch on human physiology has been studied at an individual level. The present study aims at extending the study of affective touch from isolated individuals to truly interacting dyads. We have designed an ecological paradigm where romantic partners interact only via touch and we manipulate their empathic states. Simultaneously, we collected their autonomic activity (skin conductance, pulse, respiration. 14 couples participated to the experiment. We found that interpersonal touch increased coupling of electrodermal activity between the interacting partners, regardless the intensity and valence of the emotion felt. In addition, physical touch induced strong and reliable changes in physiological states within individuals. These results support an instrumental role of interpersonal touch for affective support in close relationships. Furthermore, they suggest that touch alone allows the emergence of a somatovisceral resonance between interacting individuals, which in turn is likely to form the prerequisites for emotional contagion and empathy.

  11. Topography of social touching depends on emotional bonds between humans.

    Science.gov (United States)

    Suvilehto, Juulia T; Glerean, Enrico; Dunbar, Robin I M; Hari, Riitta; Nummenmaa, Lauri

    2015-11-10

    Nonhuman primates use social touch for maintenance and reinforcement of social structures, yet the role of social touch in human bonding in different reproductive, affiliative, and kinship-based relationships remains unresolved. Here we reveal quantified, relationship-specific maps of bodily regions where social touch is allowed in a large cross-cultural dataset (N = 1,368 from Finland, France, Italy, Russia, and the United Kingdom). Participants were shown front and back silhouettes of human bodies with a word denoting one member of their social network. They were asked to color, on separate trials, the bodily regions where each individual in their social network would be allowed to touch them. Across all tested cultures, the total bodily area where touching was allowed was linearly dependent (mean r(2) = 0.54) on the emotional bond with the toucher, but independent of when that person was last encountered. Close acquaintances and family members were touched for more reasons than less familiar individuals. The bodily area others are allowed to touch thus represented, in a parametric fashion, the strength of the relationship-specific emotional bond. We propose that the spatial patterns of human social touch reflect an important mechanism supporting the maintenance of social bonds.

  12. Topography of social touching depends on emotional bonds between humans

    Science.gov (United States)

    Suvilehto, Juulia T.; Glerean, Enrico; Dunbar, Robin I. M.; Hari, Riitta; Nummenmaa, Lauri

    2015-01-01

    Nonhuman primates use social touch for maintenance and reinforcement of social structures, yet the role of social touch in human bonding in different reproductive, affiliative, and kinship-based relationships remains unresolved. Here we reveal quantified, relationship-specific maps of bodily regions where social touch is allowed in a large cross-cultural dataset (N = 1,368 from Finland, France, Italy, Russia, and the United Kingdom). Participants were shown front and back silhouettes of human bodies with a word denoting one member of their social network. They were asked to color, on separate trials, the bodily regions where each individual in their social network would be allowed to touch them. Across all tested cultures, the total bodily area where touching was allowed was linearly dependent (mean r2 = 0.54) on the emotional bond with the toucher, but independent of when that person was last encountered. Close acquaintances and family members were touched for more reasons than less familiar individuals. The bodily area others are allowed to touch thus represented, in a parametric fashion, the strength of the relationship-specific emotional bond. We propose that the spatial patterns of human social touch reflect an important mechanism supporting the maintenance of social bonds. PMID:26504228

  13. Contact-Engineered Electrical Properties of MoS2 Field-Effect Transistors via Selectively Deposited Thiol-Molecules.

    Science.gov (United States)

    Cho, Kyungjune; Pak, Jinsu; Kim, Jae-Keun; Kang, Keehoon; Kim, Tae-Young; Shin, Jiwon; Choi, Barbara Yuri; Chung, Seungjun; Lee, Takhee

    2018-05-01

    Although 2D molybdenum disulfide (MoS 2 ) has gained much attention due to its unique electrical and optical properties, the limited electrical contact to 2D semiconductors still impedes the realization of high-performance 2D MoS 2 -based devices. In this regard, many studies have been conducted to improve the carrier-injection properties by inserting functional paths, such as graphene or hexagonal boron nitride, between the electrodes and 2D semiconductors. The reported strategies, however, require relatively time-consuming and low-yield transfer processes on sub-micrometer MoS 2 flakes. Here, a simple contact-engineering method is suggested, introducing chemically adsorbed thiol-molecules as thin tunneling barriers between the metal electrodes and MoS 2 channels. The selectively deposited thiol-molecules via the vapor-deposition process provide additional tunneling paths at the contact regions, improving the carrier-injection properties with lower activation energies in MoS 2 field-effect transistors. Additionally, by inserting thiol-molecules at the only one contact region, asymmetric carrier-injection is feasible depending on the temperature and gate bias. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Cooling the thermal grill illusion through self-touch.

    Science.gov (United States)

    Kammers, Marjolein P M; de Vignemont, Frédérique; Haggard, Patrick

    2010-10-26

    Acute peripheral pain is reduced by multisensory interactions at the spinal level [1]. Central pain is reduced by reorganization of cortical body representations [2, 3]. We show here that acute pain can also be reduced by multisensory integration through self-touch, which provides proprioceptive, thermal, and tactile input forming a coherent body representation [4, 5]. We combined self-touch with the thermal grill illusion (TGI) [6]. In the traditional TGI, participants press their fingers on two warm objects surrounding one cool object. The warm surround unmasks pain pathways, which paradoxically causes the cool object to feel painfully hot. Here, we warmed the index and ring fingers of each hand while cooling the middle fingers. Immediately after, these three fingers of the right hand were touched against the same three fingers on the left hand. This self-touch caused a dramatic 64% reduction in perceived heat. We show that this paradoxical release from paradoxical heat cannot be explained by low-level touch-temperature interactions alone. To reduce pain, we often clutch a painful hand with the other hand. We show here that self-touch not only gates pain signals reaching the brain [7-9] but also, via multisensory integration, increases coherence of cognitive body representations to which pain afferents project [10]. Copyright © 2010 Elsevier Ltd. All rights reserved.

  15. Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors

    International Nuclear Information System (INIS)

    Kwon, Hyuk-Jun; Grigoropoulos, Costas P.; Kim, Sunkook; Jang, Jaewon

    2015-01-01

    To realize the proper electrical characteristics of field-effect transistors, the quality of the contact and interface must be improved because they can substantially distort the extracted mobility, especially for materials with low densities of states like molybdenum disulfide (MoS 2 ). We show that mechanically flexible MoS 2 thin-film transistors (TFTs) with selectively laser annealed source/drain electrodes achieve enhanced device performance without plastic deformation including higher field-effect mobility (from 19.59 to 45.91 cm 2  V −1  s −1 ) in the linear regime, decreased subthreshold swing, and enhanced current saturation. Furthermore, numerical thermal simulations, measured current-voltage characteristics, and contact-free mobility extracted from the Y-function method suggest that the enhanced performance originated from a decrease in the Schottky barrier effect at the contact and an improvement of the channel interface. These results demonstrate that picosecond laser annealing can be a promising technology for building high performance flexible MoS 2 TFTs in flexible/stretchable circuitry, which should be processed at low temperatures

  16. A touch of gastronomy

    NARCIS (Netherlands)

    Spence, C.; Hobkinson, C.; Gallace, A.; Piqueras Fiszman, B.

    2013-01-01

    The last few years have seen a rapid growth of research interest in the study of the role of touch and oralsomatosensation in the experience of eating and drinking. The various ways in which the sense of touch can be used to enhance the diner’s/consumer’s experience in both everyday eating and

  17. Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

    International Nuclear Information System (INIS)

    Ganapathi, Kolla Lakshmi; Bhat, Navakanta; Mohan, Sangeneni

    2014-01-01

    HfO 2  thin films deposited on Si substrate using electron beam evaporation, are evaluated for back-gated graphene transistors. The amount of O 2  flow rate, during evaporation is optimized for 35 nm thick HfO 2  films, to achieve the best optical, chemical and electrical properties. It has been observed that with increasing oxygen flow rate, thickness of the films increased and refractive index decreased due to increase in porosity resulting from the scattering of the evaporant. The films deposited at low O 2  flow rates (1 and 3 SCCM) show better optical and compositional properties. The effects of post-deposition annealing and post-metallization annealing in forming gas ambience (FGA) on the optical and electrical properties of the films have been analyzed. The film deposited at 3 SCCM O 2  flow rate shows the best properties as measured on MOS capacitors. To evaluate the performance of device properties, back-gated bilayer graphene transistors on HfO 2  films deposited at two O 2  flow rates of 3 and 20 SCCM have been fabricated and characterized. The transistor with HfO 2  film deposited at 3 SCCM O 2  flow rate shows better electrical properties consistent with the observations on MOS capacitor structures. This suggests that an optimum oxygen pressure is necessary to get good quality films for high performance devices. (paper)

  18. Exploring Touch Communication Between Coaches and Athletes ...

    African Journals Online (AJOL)

    Exploring Touch Communication Between Coaches and Athletes. ... Proceeding from a review of the literature on human touch communication to examine research on the power of touch to exchange relational ... AJOL African Journals Online.

  19. Performance Enhancement of Power Transistors and Radiation effect

    International Nuclear Information System (INIS)

    Hassn, Th.A.A.

    2012-01-01

    The main objective of this scientific research is studying the characteristic of bipolar junction transistor device and its performance under radiation fields and temperature effect as a control element in many power circuits. In this work we present the results of experimental measurements and analytical simulation of gamma – radiation effects on the electrical characteristics and operation of power transistor types 2N3773, 2N3055(as complementary silicon power transistor are designed for general-purpose switching and amplifier applications), three samples of each type were irradiated by gamma radiation with doses, 1 K rad, 5 K rad, 10 K rad, 30 K rad, and 10 Mrad, the experimental data are utilized to establish an analytical relation between the total absorbed dose of gamma irradiation and corresponding to effective density of generated charge in the internal structure of transistor, the electrical parameters which can be measured to estimate the generated defects in the power transistor are current gain, collector current and collected emitter leakage current , these changes cause the circuit to case proper functioning. Collector current and transconductance of each device are calibrated as a function of irradiated dose. Also the threshold voltage and transistor gain can be affected and also calibrated as a function of dose. A silicon NPN power transistor type 2N3773 intended for general purpose applications, were used in this work. It was designed for medium current and high power circuits. Performance and characteristic were discusses under temperature and gamma radiation doses. Also the internal junction thermal system of the transistor represented in terms of a junction thermal resistance (Rjth). The thermal resistance changed by ΔRjth, due to the external intended, also due to the gamma doses intended. The final result from the model analysis reveals that the emitter-bias configuration is quite stable by resistance ratio RB/RE. Also the current

  20. Transistorized wide band pulse amplifier; Amplificateur d'impulsions a large bande et a transistors

    Energy Technology Data Exchange (ETDEWEB)

    Girard, J; Savinelli, H [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires; Hazoni, Y [Atomic Energy Commission (Israel)

    1960-07-01

    A simple wide band amplifier is described below, having a stability better than 1{sup 0}/00 deg{sup -1} centigrade, a current gain of 10{sup 3}, bandwidth of 30 MHz, and a signal to noise current ratio of about 100. This amplifier has been studied to answer the necessity of a fast transistor head amplifier for nuclear detectors, having in mind pile up and overloading problems. (author) [French] Un amplificateur simple, a large bande, est decrit ci-apres, il a une stabilite meilleure que le 0/00 par degre centigrade, un gain en courant de 10{sup 3} une largeur de bande de 30 MHz, et un rapport signal sur bruit en courant d'environ 100. Cet amplificateur a ete etudie pour repondre a la necessite de l'amplification des impulsions provenant de detecteurs nucleaires, ayant a l'esprit les problemes d'empilement et de saturation. (auteur)

  1. Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.

    Science.gov (United States)

    Miao, Jinshui; Zhang, Suoming; Cai, Le; Scherr, Martin; Wang, Chuan

    2015-09-22

    This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By controlling the evaporation angle, the channel length of the transistors can be reproducibly controlled to be anywhere between 20 and 70 nm. The as-fabricated 20 nm top-gated BP transistors exhibit respectable on-state current (174 μA/μm) and transconductance (70 μS/μm) at a VDS of 0.1 V. Due to the use of two-dimensional BP as the channel material, the transistors exhibit relatively small short channel effects, preserving a decent on-off current ratio of 10(2) even at an extremely small channel length of 20 nm. Additionally, unlike the unencapsulated BP devices, which are known to be chemically unstable in ambient conditions, the top-gated BP transistors passivated by the Al2O3 gate dielectric layer remain stable without noticeable degradation in device performance after being stored in ambient conditions for more than 1 week. This work demonstrates the great promise of atomically thin BP for applications in ultimately scaled transistors.

  2. Telescope Array Control System Based on Wireless Touch Screen Platform

    Science.gov (United States)

    Fu, Xia-nan; Huang, Lei; Wei, Jian-yan

    2017-10-01

    Ground-based Wide Angle Cameras (GMAC) are the ground-based observational facility for the SVOM (Space Variable Object Monitor) astronomical satellite of Sino-French cooperation, and Mini-GWAC is the pathfinder and supplement of GWAC. In the context of the Mini-GWAC telescope array, this paper introduces the design and implementation of a kind of telescope array control system based on the wireless touch screen platform. We describe the development and implementation of the system in detail in terms of control system principle, system hardware structure, software design, experiment, and test etc. The system uses a touch-control PC which is based on the Windows CE system as the upper computer, while the wireless transceiver module and PLC (Programmable Logic Controller) are taken as the system kernel. It has the advantages of low cost, reliable data transmission, and simple operation. And the control system has been applied to the Mini-GWAC successfully.

  3. Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

    KAUST Repository

    Lan, Yann Wen

    2016-09-05

    The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

  4. Seeing touch in the somatosensory cortex: a TMS study of the visual perception of touch.

    Science.gov (United States)

    Bolognini, Nadia; Rossetti, Angela; Maravita, Angelo; Miniussi, Carlo

    2011-12-01

    Recent studies suggest the existence of a visuo-tactile mirror system, comprising the primary (SI) and secondary (SII) somatosensory cortices, which matches observed touch with felt touch. Here, repetitive transcranial magnetic stimulation (rTMS) was used to determine whether SI or SII play a functional role in the visual processing of tactile events. Healthy participants performed a visual discrimination task with tactile stimuli (a finger touching a hand) and a control task (a finger moving without touching). During both tasks, rTMS was applied over either SI or SII, and to the occipital cortex. rTMS over SI selectively reduced subject performance for interpreting whether a contralateral visual tactile stimulus contains a tactile event, whereas SII stimulation impaired visual processing regardless of the tactile component. These findings provide evidence for a multimodal sensory-motor system with mirror properties, where somatic and visual properties of action converge. SI, a cortical area traditionally viewed as modality-specific, is selectively implicated in the visual processing of touch. These results are in line with the existence of a sensory mirror system mediating the embodied simulation concept. Copyright © 2010 Wiley Periodicals, Inc.

  5. ENVIRONMENTAL TECHNOLOGY VERIFICATION REPORT LASER TOUCH AND TECHNOLOGIES, LLC LASER TOUCH MODEL LT-B512

    Science.gov (United States)

    The Environmental Technology Verification report discusses the technology and performance of Laser Touch model LT-B512 targeting device manufactured by Laser Touch and Technologies, LLC, for manual spray painting operations. The relative transfer efficiency (TE) improved an avera...

  6. Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics.

    Science.gov (United States)

    Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2015-11-14

    Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors.

  7. Nurses' comfort with touch and workplace well-being.

    Science.gov (United States)

    Pedrazza, Monica; Minuzzo, Stefania; Berlanda, Sabrina; Trifiletti, Elena

    2015-06-01

    Touch is an essential part of caregiving and has been proved to be useful to reduce pain. Nevertheless, little attention has been paid to nurses' perceptions of touch. The aim of this article was to examine the relationship between nurses' feelings of comfort with touch and their well-being at work. A sample of 241 nurses attending a pain management training course completed a questionnaire, including the following measures: Comfort with Touch (CT) scale (task-oriented contact, touch promoting physical comfort, touch providing emotional containment), Maslach Burnout Inventory (MBI; emotional exhaustion, cynicism), and Job Satisfaction. Results of structural equation models showed that touch providing emotional containment was the main predictor of emotional exhaustion. Emotional exhaustion, in turn, was positively related to cynicism and negatively related to job satisfaction. In addition, the direct path from touch providing emotional containment to cynicism was significant. Practical implications of the findings are discussed. © The Author(s) 2014.

  8. Phase transition and field effect topological quantum transistor made of monolayer MoS2

    Science.gov (United States)

    Simchi, H.; Simchi, M.; Fardmanesh, M.; Peeters, F. M.

    2018-06-01

    We study topological phase transitions and topological quantum field effect transistor in monolayer molybdenum disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q 2) diagonal term in the Hamiltonian, we show that the phase diagram includes quantum anomalous Hall effect, quantum spin Hall effect, and spin quantum anomalous Hall effect regions such that the topological Kirchhoff law is satisfied in the plane. By considering the q 2 diagonal term and including one valley, it is shown that MoS2 has a non-trivial topology, and the valley Chern number is non-zero for each spin. We show that the wave function is (is not) localized at the edges when the q 2 diagonal term is added (deleted) to (from) the spin-valley Dirac mass equation. We calculate the quantum conductance of zigzag MoS2 nanoribbons by using the nonequilibrium Green function method and show how this device works as a field effect topological quantum transistor.

  9. Experimental apparatus for teaching electrostatic topics: the electroscope with field-effect transistor

    Directory of Open Access Journals (Sweden)

    Thiago Alves de Sá Muniz Sampaio

    2017-05-01

    Full Text Available Regular school labs lack experiments that can properly identify many of the phenomena present in the electrostatic study. This paper proposes the implementation of a new kind of simple experimental apparatus for teaching topics in this area of physics, consisting of an electroscope kind that uses the field-effect transistor for detecting electric charges coming from electrified bodies. An explanation is given on the principles that makes this type of transistor an effective device due to its high sensitivity to electrostatic fields, as well as an analysis of the usefulness of this project for viewing many peculiar phenomena, such as polarization and induction. Based on this, we propose some simple activities that can be done in the classroom to involve students in the initial subject of electrostatics. We expect that this form of teaching along with experimental and explanatory approach of the phenomena in the classroom can bring to students a better learning of these concepts, demonstrating the utility of experimentation on teaching electrostatics.

  10. Superconducting transistor

    International Nuclear Information System (INIS)

    Gray, K.E.

    1978-01-01

    A three film superconducting tunneling device, analogous to a semiconductor transistor, is presented, including a theoretical description and experimental results showing a current gain of four. Much larger current gains are shown to be feasible. Such a development is particularly interesting because of its novelty and the striking analogies with the semiconductor junction transistor

  11. Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities

    International Nuclear Information System (INIS)

    But, D. B.; Drexler, C.; Ganichev, S. D.; Sakhno, M. V.; Sizov, F. F.; Dyakonova, N.; Drachenko, O.; Gutin, A.; Knap, W.

    2014-01-01

    Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm 2 was studied for Si metal–oxide–semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation intensity up to the kW/cm 2 range. Nonlinearity followed by saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm 2 . The observed photoresponse nonlinearity is explained by nonlinearity and saturation of the transistor channel current. A theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitative experimental data both in linear and nonlinear regions. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orders of magnitudes of power densities (from ∼0.5 mW/cm 2 to ∼5 kW/cm 2 )

  12. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  13. All solution-processed high-resolution bottom-contact transparent metal-oxide thin film transistors

    International Nuclear Information System (INIS)

    Park, Sung Kyu; Kim, Yong-Hoon; Han, Jeong-In

    2009-01-01

    We report all solution-processed high-resolution bottom-contact indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) using a simple surface patterning and dip-casting process. High-resolution nanoparticulate Ag source/drain electrodes and a sol-gel processed IGZO semiconductor were deposited by a simple dip-casting along with a photoresist-free, non-relief-pattern lithographic process. The deposited Ag and IGZO solution can be steered into the desired hydrophilic areas by a low surface energy self-assembled monolayer, resulting in source/drain electrodes and semiconducting layer, respectively. The all solution-processed bottom-contact IGZO TFTs including a channel length of 10 μm typically showed a mobility range 0.05-0.2 cm 2 V -1 s -1 with an on/off ratio of more than 10 6 .

  14. Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

    Science.gov (United States)

    Zhang, Panlong; Wang, Haibo; Yan, Donghang

    2017-09-01

    A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. The Meaning of Touch to Patients Undergoing Chemotherapy.

    Science.gov (United States)

    Leonard, Katherine E; Kalman, Melanie

    2015-09-01

    To explore the experience of being touched in people diagnosed with cancer and undergoing IV chemotherapy.
 Qualitative, phenomenologic.
 Central New York and northern Pennsylvania, both in the northeastern United States
. 11 Caucasian, English-speaking adults.
. Individual interviews used open-ended questions to explore the meaning of being touched to each participant. Meanings of significant statements, which pertained to the phenomenon under investigation, were formulated hermeneutically. Themes were derived from immersion in the data and extraction of similar and divergent concepts among all interviews, yielding a multidimensional understanding of the meaning of being touched in this sample of participants
. Participants verbalized awareness of and sensitivity to the regard of others who were touching them, including healthcare providers, family, and friends. Patients do not classify a provider's touch as either task or comfort oriented. Meanings evolved in the context of three primary themes. The experience of being touched encompasses the quality of presence of providers, family, or friends. For touch to be regarded as positive, patients must be regarded as inherently whole and equal. The quality of how touch is received is secondary to and flows from the relationship established between patient and provider
. This study adds to the literature in its finding that the fundamental quality of the relationship between patient and provider establishes the perceived quality of touch. Previous studies have primarily divided touch into two categories.

  16. Rendering high charge density of states in ionic liquid-gated MoS 2 transistors

    NARCIS (Netherlands)

    Lee, Y.; Lee, J.; Kim, S.; Park, H.S.

    2014-01-01

    We investigated high charge density of states (DOS) in the bandgap of MoS2 nanosheets with variable temperature measurements on ionic liquid-gated MoS2 transistors. The thermally activated charge transport indicates that the electrical current in the two-dimensional MoS 2 nanosheets under high

  17. Effect of Dielectric Interface on the Performance of MoS2 Transistors.

    Science.gov (United States)

    Li, Xuefei; Xiong, Xiong; Li, Tiaoyang; Li, Sichao; Zhang, Zhenfeng; Wu, Yanqing

    2017-12-27

    Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS 2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS 2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS 2 FETs from 300 to 4.3 K. Results show that Al 2 O 3 /HfO 2 could boost the mobility and drain current. Meanwhile, MoS 2 transistors with Al 2 O 3 /HfO 2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO 2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO 2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al 2 O 3 /HfO 2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.

  18. The TaSST: Tactile Sleeve for Social Touch

    NARCIS (Netherlands)

    Huisman, G.; Darriba Frederiks, A.; van Dijk, B.; Heylen, D.; Kröse, B.

    2013-01-01

    In this paper we outline the design process of the TaSST (Tactile Sleeve for Social Touch), a touch-sensitive vibrotactile arm sleeve. The TaSST was designed to enable two people to communicate different types of touch over a distance. The touch-sensitive surface of the sleeve consists of a grid of

  19. The TaSST: Tactile sleeve for social touch

    NARCIS (Netherlands)

    Huisman, Gijs; Darriba Frederiks, Aduén; van Dijk, Elisabeth M.A.G.; Heylen, Dirk K.J.; Krose, Ben

    In this paper we outline the design process of the TaSST (Tactile Sleeve for Social Touch), a touch-sensitive vibrotactile arm sleeve. The TaSST was designed to enable two people to communicate different types of touch over a distance. The touch-sensitive surface of the sleeve consists of a grid of

  20. The TaSST - Tactile Sleeve for Social Touch

    NARCIS (Netherlands)

    Huisman, Gijs; Darriba Frederiks, Aduén; Van Dijk, Betsy; Heylen, Dirk

    2013-01-01

    In this paper we outline the design process of TaSST (Tactile Sleeve for Social Touch), a touch-sensitive vibrotactile arm sleeve. The TaSST was designed to enable two people to communicate different types of touches over a distance. The touch-sensitive surface of the sleeve consists of a grid of

  1. Protonic transistors from thin reflecting films

    Energy Technology Data Exchange (ETDEWEB)

    Ordinario, David D.; Phan, Long; Jocson, Jonah-Micah [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Nguyen, Tam [Department of Chemistry, University of California, Irvine, California 92697 (United States); Gorodetsky, Alon A., E-mail: alon.gorodetsky@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Chemistry, University of California, Irvine, California 92697 (United States)

    2015-01-01

    Ionic transistors from organic and biological materials hold great promise for bioelectronics applications. Thus, much research effort has focused on optimizing the performance of these devices. Herein, we experimentally validate a straightforward strategy for enhancing the high to low current ratios of protein-based protonic transistors. Upon reducing the thickness of the transistors’ active layers, we increase their high to low current ratios 2-fold while leaving the other figures of merit unchanged. The measured ratio of 3.3 is comparable to the best values found for analogous devices. These findings underscore the importance of the active layer geometry for optimum protonic transistor functionality.

  2. Accelerating the life of transistors

    International Nuclear Information System (INIS)

    Qi Haochun; Lü Changzhi; Zhang Xiaoling; Xie Xuesong

    2013-01-01

    Choosing small and medium power switching transistors of the NPN type in a 3DK set as the study object, the test of accelerating life is conducted in constant temperature and humidity, and then the data are statistically analyzed with software developed by ourselves. According to degradations of such sensitive parameters as the reverse leakage current of transistors, the lifetime order of transistors is about more than 10 4 at 100 °C and 100% relative humidity (RH) conditions. By corrosion fracture of transistor outer leads and other failure modes, with the failure truncated testing, the average lifetime rank of transistors in different distributions is extrapolated about 10 3 . Failure mechanism analyses of degradation of electrical parameters, outer lead fracture and other reasons that affect transistor lifetime are conducted. The findings show that the impact of external stress of outer leads on transistor reliability is more serious than that of parameter degradation. (semiconductor devices)

  3. The Use of Touch in Therapy: Can We Talk?

    Science.gov (United States)

    Taylor, Melanie A.

    The empirical literature regarding the use of nonerotic touch in psychotherapy is reviewed. Theoretical and ethical concerns are discussed, including the taboo against touching clients, situations in which touch may be appropriate, and whether or not nonerotic touch leads to erotic touch. It is difficult to design controlled studies for ongoing…

  4. Field emission current from a junction field-effect transistor

    International Nuclear Information System (INIS)

    Monshipouri, Mahta; Abdi, Yaser

    2015-01-01

    Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

  5. Proximity and physical navigation in collaborative work with a multi-touch wall-display

    DEFF Research Database (Denmark)

    Jakobsen, Mikkel Rønne; Hornbæk, Kasper

    2012-01-01

    Multi-touch, wall-sized displays afford new forms of collaboration. Yet, most data on collaboration with multi-touch displays come from tabletop settings, where users often sit and where space is a limited resource. We study how two-person groups navigate in relation to a 2.8m!1.2m multi-touch di......-touch display with 24.8 megapixels and to each other when solving a sensemaking task on a document collection. The results show that users physically navigate to shift fluently among different parts of the display and between parallel and joint group work....

  6. Effect of passivation on the sensitivity and stability of pentacene transistor sensors in aqueous media

    KAUST Repository

    Khan, Hadayat Ullah; Jang, Junhyuk; Kim, Jangjoo; Knoll, Wolfgang

    2011-01-01

    Charge-detecting biosensors have recently become the focal point of biosensor research, especially research onto organic thin-film transistors (OTFTs), which combine compactness, a low cost, and fast and label-free detection to realize simple

  7. You can't touch this: touch-free navigation through radiological images.

    Science.gov (United States)

    Ebert, Lars C; Hatch, Gary; Ampanozi, Garyfalia; Thali, Michael J; Ross, Steffen

    2012-09-01

    Keyboards, mice, and touch screens are a potential source of infection or contamination in operating rooms, intensive care units, and autopsy suites. The authors present a low-cost prototype of a system, which allows for touch-free control of a medical image viewer. This touch-free navigation system consists of a computer system (IMac, OS X 10.6 Apple, USA) with a medical image viewer (OsiriX, OsiriX foundation, Switzerland) and a depth camera (Kinect, Microsoft, USA). They implemented software that translates the data delivered by the camera and a voice recognition software into keyboard and mouse commands, which are then passed to OsiriX. In this feasibility study, the authors introduced 10 medical professionals to the system and asked them to re-create 12 images from a CT data set. They evaluated response times and usability of the system compared with standard mouse/keyboard control. Users felt comfortable with the system after approximately 10 minutes. Response time was 120 ms. Users required 1.4 times more time to re-create an image with gesture control. Users with OsiriX experience were significantly faster using the mouse/keyboard and faster than users without prior experience. They rated the system 3.4 out of 5 for ease of use in comparison to the mouse/keyboard. The touch-free, gesture-controlled system performs favorably and removes a potential vector for infection, protecting both patients and staff. Because the camera can be quickly and easily integrated into existing systems, requires no calibration, and is low cost, the barriers to using this technology are low.

  8. Field emission current from a junction field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

    2015-04-15

    Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

  9. High-performance vertical organic transistors.

    Science.gov (United States)

    Kleemann, Hans; Günther, Alrun A; Leo, Karl; Lüssem, Björn

    2013-11-11

    Vertical organic thin-film transistors (VOTFTs) are promising devices to overcome the transconductance and cut-off frequency restrictions of horizontal organic thin-film transistors. The basic physical mechanisms of VOTFT operation, however, are not well understood and VOTFTs often require complex patterning techniques using self-assembly processes which impedes a future large-area production. In this contribution, high-performance vertical organic transistors comprising pentacene for p-type operation and C60 for n-type operation are presented. The static current-voltage behavior as well as the fundamental scaling laws of such transistors are studied, disclosing a remarkable transistor operation with a behavior limited by injection of charge carriers. The transistors are manufactured by photolithography, in contrast to other VOTFT concepts using self-assembled source electrodes. Fluorinated photoresist and solvent compounds allow for photolithographical patterning directly and strongly onto the organic materials, simplifying the fabrication protocol and making VOTFTs a prospective candidate for future high-performance applications of organic transistors. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Implementation of Networking-by-Touch to Small Unit, Network-Enabled Operations

    Science.gov (United States)

    2010-09-01

    consumer electronics and wearable devices etc., which are further exploit later in the chapter. 4 . Touch The body’s sense of touch is a potentially...consoles including Sony’s Playstation 2, Nintendo’s GameCube and Wii, and Microsoft’s X-Box and X-box 360. 56 6. Tactile Displays Embedded in Consumer ...2010 3. REPORT TYPE AND DATES COVERED Master’s Thesis 4 . TITLE AND SUBTITLE Implementation of Networking-by-Touch to Small Unit, Network-Enabled

  11. Transport properties of field effect transistors with randomly networked single walled carbon nanotubes grown by plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Kim, Un Jeong; Park, Wanjun

    2009-01-01

    The transport properties of randomly networked single walled carbon nanotube (SWNT) transistors with different channel lengths of L c = 2-10 μm were investigated. Randomly networked SWNTs were directly grown for the two different densities of ρ ∼ 25 μm -2 and ρ ∼ 50 μm -2 by water plasma enhanced chemical vapour deposition. The field effect transport is governed mainly by formation of the current paths that is related to the nanotube density. On the other hand, the off-state conductivity deviates from linear dependence for both nanotube density and channel length. The field effect mobility of holes is estimated as 4-13 cm 2 V -1 s -1 for the nanotube transistors based on the simple MOS theory. The mobility is increased for the higher density without meaningful dependence on the channel lengths.

  12. High mobility and quantum well transistors design and TCAD simulation

    CERN Document Server

    Hellings, Geert

    2013-01-01

    For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...

  13. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  14. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  15. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    International Nuclear Information System (INIS)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-01-01

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  16. Shootthrough fault protection system for bipolar transistors in a voltage source transistor inverter

    International Nuclear Information System (INIS)

    Wirth, W.F.

    1982-01-01

    Faulted bipolar transistors in a voltage source transistor inverter are protected against shootthrough fault current, from the filter capacitor of the d-c voltage source which drives the inverter over the d-c bus, by interposing a small choke in series with the filter capacitor to limit the rate of rise of that fault current while at the same time causing the d-c bus voltage to instantly drop to essentially zero volts at the beginning of a shootthrough fault. In this way, the load lines of the faulted transistors are effectively shaped so that they do not enter the second breakdown area, thereby preventing second breakdown destruction of the transistors

  17. Diffusion pipes at PNP switching transistors

    International Nuclear Information System (INIS)

    Sachelarie, D.; Postolache, C.; Gaiseanu, F.

    1976-01-01

    The appearance of the ''diffusion pipes'' greatly affects the fabrication of the PNP high-frequency/very-fast-switching transistors. A brief review of the principal problems connected to the presence of these ''pipes'' is made. A research program is presented which permitted the fabrication of the PNP switching transistors at ICCE-Bucharest, with transition frequency fsub(T) = 1.2 GHz and storage time tsub(s) = 4.5 ns. (author)

  18. High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics.

    Science.gov (United States)

    Chang, Ren-Jie; Tan, Haijie; Wang, Xiaochen; Porter, Benjamin; Chen, Tongxin; Sheng, Yuewen; Zhou, Yingqiu; Huang, Hefu; Bhaskaran, Harish; Warner, Jamie H

    2018-04-18

    Tin disulfide crystals with layered two-dimensional (2D) sheets are grown by chemical vapor deposition using a novel precursor approach and integrated into all 2D transistors with graphene (Gr) electrodes. The Gr:SnS 2 :Gr transistors exhibit excellent photodetector response with high detectivity and photoresponsivity. We show that the response of the all 2D photodetectors depends upon charge trapping at the interface and the Schottky barrier modulation. The thickness-dependent SnS 2 measurements in devices reveal a transition from the interface-dominated response for thin crystals to bulklike response for the thicker SnS 2 crystals, showing the sensitivity of devices fabricated using layered materials on the number of layers. These results show that SnS 2 has photosensing performance when combined with Gr electrodes that is comparable to other 2D transition metal dichalcogenides of MoS 2 and WS 2 .

  19. Tin Dioxide Electrolyte-Gated Transistors Working in Depletion and Enhancement Modes.

    Science.gov (United States)

    Valitova, Irina; Natile, Marta Maria; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

    2017-10-25

    Metal oxide semiconductors are interesting for next-generation flexible and transparent electronics because of their performance and reliability. Tin dioxide (SnO 2 ) is a very promising material that has already found applications in sensing, photovoltaics, optoelectronics, and batteries. In this work, we report on electrolyte-gated, solution-processed polycrystalline SnO 2 transistors on both rigid and flexible substrates. For the transistor channel, we used both unpatterned and patterned SnO 2 films. Since decreasing the SnO 2  area in contact with the electrolyte increases the charge-carrier density, patterned transistors operate in the depletion mode, whereas unpatterned ones operate in the enhancement mode. We also fabricated flexible SnO 2 transistors that operate in the enhancement mode that can withstand moderate mechanical bending.

  20. Mirror-Touch and Ticker Tape Perceptions in Synesthesia

    Directory of Open Access Journals (Sweden)

    Charlotte Anne Chun

    2013-11-01

    Full Text Available A fundamental question in the field of synesthesia is whether it is associated with other cognitive phenomena. The current study examined synesthesia’s connections with phenomenal traits of mirror-touch and ticker tape experiences, as well as the representation of the three phenomena in the population, across gender and domain of work/study. Mirror-touch is the automatic, involuntary experience of tactile sensation on one's own body when others are being touched. For example, seeing another person’s arm being stroked can evoke physical touch sensation on one’s own arm. Ticker tape is the automatic visualization of spoken words or thoughts, such as a teleprompter. For example, when spoken to, a ticker taper might see mentally the spoken words displayed in front of his face or as coming out of the speaker’s mouth. To explore synesthesia’s associations with these phenomena, a diverse group (n=3,743 was systematically recruited from eight universities and one public museum in France to complete an online screening. Of the 1,017 eligible respondents, synesthetes (across all subtypes reported higher rates of mirror-touch and ticker tape than non-synesthetes, suggesting that synesthesia is associated with these phenomenal traits. However effect size was small and we could not rule out that response bias influenced these associations. Mirror-touch and ticker tape were independent. No differences were found across gender or domain of work and study in prevalence of synesthesia, mirror-touch or ticker tape. The prevalence of ticker tape, unknown so far, was estimated at about 7%, an intermediate rate between estimates of grapheme-color (2 to 4% and sequence-space synesthesia (9 to 14%. Within synesthesia, grapheme-personification, also called ordinal-linguistic personification was the most common subtype and was estimated around 12%. Co-occurences of the different types of synesthesia were higher than chance, though at the level of small effect

  1. Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

    International Nuclear Information System (INIS)

    Liu, P.; Chen, T.P.; Liu, Z.; Tan, C.S.; Leong, K.C.

    2013-01-01

    Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O 2 plasma immersion has been examined. O 2 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O 2 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O 2 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films. - Highlights: • Oxygen plasma immersion effect on indium gallium zinc oxide thin film properties • Oxygen-related defect reduces in the InGaZnO thin film with oxygen plasma immersion. • Increasing oxygen plasma immersion duration on device will decrease the off current. • Oxygen plasma immersion enhances the performance of device

  2. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  3. Vertical organic transistors

    International Nuclear Information System (INIS)

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

    2015-01-01

    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted. (topical review)

  4. Vertical organic transistors.

    Science.gov (United States)

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

    2015-11-11

    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

  5. Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

    Directory of Open Access Journals (Sweden)

    Yi Li

    2014-06-01

    Full Text Available This study investigates the remarkable reduction in the threshold voltage (VT of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S. Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from −20.4 V to −0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.

  6. An accurate and simple large signal model of HEMT

    DEFF Research Database (Denmark)

    Liu, Qing

    1989-01-01

    A large-signal model of discrete HEMTs (high-electron-mobility transistors) has been developed. It is simple and suitable for SPICE simulation of hybrid digital ICs. The model parameters are extracted by using computer programs and data provided by the manufacturer. Based on this model, a hybrid...

  7. Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

    KAUST Repository

    Al-Jawhari, Hala A.

    2014-11-11

    The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

  8. Object recognition - Convergence of vision, audition, and touch

    DEFF Research Database (Denmark)

    Kassuba, Tanja

    of object information across audition and touch or across all thee senses. Further, even though object recognition within different senses is to some degree redundant, the different senses differ with respect to their intrinsic efficiency in extracting types of information (Lederman & Klatzky, 2009...... magnetic resonance imaging (fMRI), diffusion tensor imaging (DTI), and repetitive transcranial magnetic stimulation (rTMS). The following research questions were addressed: 1. Where in the human brain does object recognition converge across vision, audition, and touch? 2. How is audio-haptic object......-match-to-sample task was applied in which participants had to match a target object with a previously presented sample object within and across audition and touch in both directions (auditory─haptic and haptic─auditory). As a coherence in content is an important binding cue (Laurienti et al., 2004), semantic...

  9. Therapeutic touch and post-Hurricane Hugo stress.

    Science.gov (United States)

    Olson, M; Sneed, N; Bonadonna, R; Ratliff, J; Dias, J

    1992-06-01

    This repeated-session design sought to answer questions about the effectiveness of therapeutic touch in reduction of stress for 23 individuals following a natural disaster. In addition, methodological issues related to the average length of time for a therapeutic-touch treatment and a method of documenting the nonverbal interaction between subject and toucher were investigated. Findings indicate that stressed people report themselves to be less stressed following therapeutic touch (p = .05). Time of therapeutic-touch intervention varied significantly between the touchers, with a range of 6.8 to 20 minutes. Qualitative data examining the interaction of toucher and subject raised a number of questions that require further study.

  10. Low-frequency noise in single electron tunneling transistor

    DEFF Research Database (Denmark)

    Tavkhelidze, A.N.; Mygind, Jesper

    1998-01-01

    The noise in current biased aluminium single electron tunneling (SET) transistors has been investigated in the frequency range of 5 mHz ..., we find the same input charge noise, typically QN = 5 × 10–4 e/Hz1/2 at 10 Hz, with and without the HF shielding. At lower frequencies, the noise is due to charge trapping, and the voltage noise pattern superimposed on the V(Vg) curve (voltage across transistor versus gate voltage) strongly depends...... when ramping the junction voltage. Dynamic trapping may limit the high frequency applications of the SET transistor. Also reported on are the effects of rf irradiation and the dependence of the SET transistor noise on bias voltage. ©1998 American Institute of Physics....

  11. Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

    Science.gov (United States)

    Liu, Yuan; Guo, Jian; Wu, Yecun; Zhu, Enbo; Weiss, Nathan O; He, Qiyuan; Wu, Hao; Cheng, Hung-Chieh; Xu, Yang; Shakir, Imran; Huang, Yu; Duan, Xiangfeng

    2016-10-12

    Two-dimensional semiconductors (2DSCs) such as molybdenum disulfide (MoS 2 ) have attracted intense interest as an alternative electronic material in the postsilicon era. However, the ON-current density achieved in 2DSC transistors to date is considerably lower than that of silicon devices, and it remains an open question whether 2DSC transistors can offer competitive performance. A high current device requires simultaneous minimization of the contact resistance and channel length, which is a nontrivial challenge for atomically thin 2DSCs, since the typical low contact resistance approaches for 2DSCs either degrade the electronic properties of the channel or are incompatible with the fabrication process for short channel devices. Here, we report a new approach toward high-performance MoS 2 transistors by using a physically assembled nanowire as a lift-off mask to create ultrashort channel devices with pristine MoS 2 channel and self-aligned low resistance metal/graphene hybrid contact. With the optimized contact in short channel devices, we demonstrate sub-100 nm MoS 2 transistor delivering a record high ON-current of 0.83 mA/μm at 300 K and 1.48 mA/μm at 20 K, which compares well with that of silicon devices. Our study, for the first time, demonstrates that the 2DSC transistors can offer comparable performance to the 2017 target for silicon transistors in International Technology Roadmap for Semiconductors (ITRS), marking an important milestone in 2DSC electronics.

  12. Ultrasensitive detection of Hg2+ using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    International Nuclear Information System (INIS)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-01-01

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg 2+ . The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg 2+ and thymines were combined. The current response of this Hg 2+ ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg 2+ ions on the surface by the highly specific thymine-Hg 2+ -thymine recognition. The dynamic linear range for Hg 2+ detection has been determined in the concentrations from 10 −14 to 10 −8 M and a detection limit below 10 −14 M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg 2+ detection till now.

  13. On theory of single-molecule transistor

    International Nuclear Information System (INIS)

    Tran Tien Phuc

    2009-01-01

    The results of the study on single-molecule transistor are mainly investigated in this paper. The structure of constructed single-molecule transistor is similar to a conventional MOSFET. The conductive channel of the transistors is a single-molecule of halogenated benzene derivatives. The chemical simulation software CAChe was used to design and implement for the essential parameter of the molecules utilized as the conductive channel. The GUI of Matlab has been built to design its graphical interface, calculate and plot the output I-V characteristic curves for the transistor. The influence of temperature, length and width of the conductive channel, and gate voltage is considered. As a result, the simulated curves are similar to the traditional MOSFET's. The operating temperature range of the transistors is wider compared with silicon semiconductors. The supply voltage for transistors is only about 1 V. The size of transistors in this research is several nanometers.

  14. Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors.

    Science.gov (United States)

    Matsunaga, Masahiro; Higuchi, Ayaka; He, Guanchen; Yamada, Tetsushi; Krüger, Peter; Ochiai, Yuichi; Gong, Yongji; Vajtai, Robert; Ajayan, Pulickel M; Bird, Jonathan P; Aoki, Nobuyuki

    2016-10-05

    Utilizing an innovative combination of scanning-probe and spectroscopic techniques, supported by first-principles calculations, we demonstrate how electron-beam exposure of field-effect transistors, implemented from ultrathin molybdenum disulfide (MoS 2 ), may cause nanoscale structural modifications that in turn significantly modify the electrical operation of these devices. Quite surprisingly, these modifications are induced by even the relatively low electron doses used in conventional electron-beam lithography, which are found to induce compressive strain in the atomically thin MoS 2 . Likely arising from sulfur-vacancy formation in the exposed regions, the strain gives rise to a local widening of the MoS 2 bandgap, an idea that is supported both by our experiment and by the results of first-principles calculations. A nanoscale potential barrier develops at the boundary between exposed and unexposed regions and may cause extrinsic variations in the resulting electrical characteristics exhibited by the transistor. The widespread use of electron-beam lithography in nanofabrication implies that the presence of such strain must be carefully considered when seeking to harness the potential of atomically thin transistors. At the same time, this work also promises the possibility of exploiting the strain as a means to achieve "bandstructure engineering" in such devices.

  15. Solvent-free directed patterning of a highly ordered liquid crystalline organic semiconductor via template-assisted self-assembly for organic transistors.

    Science.gov (United States)

    Kim, Aryeon; Jang, Kwang-Suk; Kim, Jinsoo; Won, Jong Chan; Yi, Mi Hye; Kim, Hanim; Yoon, Dong Ki; Shin, Tae Joo; Lee, Myong-Hoon; Ka, Jae-Won; Kim, Yun Ho

    2013-11-20

    Highly ordered organic semiconductor micropatterns of the liquid-crystalline small molecule 2,7-didecylbenzothienobenzothiophene (C10 -BTBT) are fabricated using a simple method based on template-assisted self-assembly (TASA). The liquid crystallinity of C10 -BTBT allows solvent-free fabrication of high-performance printed organic field-effect transistors (OFETs). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Liquid crystals for organic transistors (Conference Presentation)

    Science.gov (United States)

    Hanna, Jun-ichi; Iino, Hiroaki

    2016-09-01

    Liquid crystals are a new type of organic semiconductors exhibiting molecular orientation in self-organizing manner, and have high potential for device applications. In fact, various device applications have been proposed so far, including photosensors, solar cells, light emitting diodes, field effect transistors, and so on.. However, device performance in those fabricated with liquid crystals is less than those of devices fabricated with conventional materials in spite of unique features of liquid crystals. Here we discuss how we can utilize the liquid crystallinity in organic transistors and how we can overcome conventional non-liquid crystalline organic transistor materials. Then, we demonstrate high performance organic transistors fabricated with a smectic E liquid crystal of Ph-BTBT-10, which show high mobility of over 10cm2/Vs and high thermal durability of over 200oC in OFETs fabricated with its spin-coated polycrystalline thin films.

  17. Investigating Maternal Touch and Infants' Self-Regulatory Behaviours during a Modified Face-to-Face Still-Face with Touch Procedure

    Science.gov (United States)

    Jean, Amélie D. L.; Stack, Dale M.; Arnold, Sharon

    2014-01-01

    Maternal touch and infants' self-regulatory behaviours were examined during a modified Still-Face with Touch (SF?+?T) procedure. Mothers and their 5½-month-old infants participated in one period of Normal interaction followed by three SF?+?T periods. Maternal functions of touch, and infants' self-regulatory behaviour, affect, and…

  18. Social touch in human–computer interaction

    NARCIS (Netherlands)

    Erp, J.B.F. van; Toet, A.

    2015-01-01

    Touch is our primary non-verbal communication channel for conveying intimate emotions and as such essential for our physical and emotional wellbeing. In our digital age, human social interaction is often mediated. However, even though there is increasing evidence that mediated touch affords

  19. Social touch in human–computer interaction

    NARCIS (Netherlands)

    van Erp, Johannes Bernardus Fransiscus; Toet, Alexander

    Touch is our primary non-verbal communication channel for conveying intimate emotions and as such essential for our physical and emotional wellbeing. In our digital age, human social interaction is often mediated. However, even though there is increasing evidence that mediated touch affords

  20. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-02-14

    We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

  1. Colour tuneable light-emitting transistor

    Energy Technology Data Exchange (ETDEWEB)

    Feldmeier, Eva J.; Melzer, Christian; Seggern, Heinz von [Electronic Materials Department, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

    2010-07-01

    In recent years the interest in ambipolar organic light-emitting field-effect transistors has increased steadily as the devices combine switching behaviour of transistors with light emission. Usually, small molecules and polymers with a band gap in the visible spectral range serve as semiconducting materials. Mandatory remain balanced injection and transport properties for both charge carrier types to provide full control of the spatial position of the recombination zone of electrons and holes in the transistor channel via the applied voltages. As will be presented here, the spatial control of the recombination zone opens new possibilities towards light-emitting devices with colour tuneable emission. In our contribution an organic light-emitting field-effect transistors is presented whose emission colour can be changed by the applied voltages. The organic top-contact field-effect transistor is based on a parallel layer stack of acenes serving as organic transport and emission layers. The transistor displays ambipolar characteristics with a narrow recombination zone within the transistor channel. During operation the recombination zone can be moved by a proper change in the drain and gate bias from one organic semiconductor layer to another one inducing a change in the emission colour. In the presented example the emission maxima can be switched from 530 nm to 580 nm.

  2. The effects of therapeutic touch on pain.

    Science.gov (United States)

    Monroe, Carolyn Magdalen

    2009-06-01

    To better understand how Therapeutic Touch can be used in today's health care arena, this integrative literature review will examine current research that will help answer the question, Does Therapeutic Touch reduce pain? An extensive search was conducted of the online databases MEDLINE, CINAHL, Cochrane Library, EMBASE, PsychLIT, and PubMed to retrieve research articles published from 1997 to 2007. Seven studies that were conducted between 1997 and 2004 were found and only five of the seven were included as pertinent evidence to answer the question. All of the research that was reviewed to answer whether Therapeutic Touch could significantly reduce pain revealed a majority of statistically significant positive results for implementing this intervention. Because there are no identified risks to Therapeutic Touch as a pain relief measure, it is safe to recommend despite the limitations of current research. Therapeutic Touch should be considered among the many possible nursing interventions for the treatment of pain.

  3. Fingertip touch improves postural stability in patients with peripheral neuropathy.

    Science.gov (United States)

    Dickstein, R; Shupert, C L; Horak, F B

    2001-12-01

    The purpose of this work was to determine whether fingertip touch on a stable surface could improve postural stability during stance in subjects with somatosensory loss in the feet from diabetic peripheral neuropathy. The contribution of fingertip touch to postural stability was determined by comparing postural sway in three touch conditions (light, heavy and none) in eight patients and eight healthy control subjects who stood on two surfaces (firm or foam) with eyes open or closed. In the light touch condition, fingertip touch provided only somatosensory information because subjects exerted less than 1 N of force with their fingertip to a force plate, mounted on a vertical support. In the heavy touch condition, mechanical support was available because subjects transmitted as much force to the force plate as they wished. In the no touch condition, subjects held the right forefinger above the force plate. Antero-posterior (AP) and medio-lateral (ML) root mean square (RMS) of center of pressure (CoP) sway and trunk velocity were larger in subjects with somatosensory loss than in control subjects, especially when standing on the foam surface. The effects of light and heavy touch were similar in the somatosensory loss and control groups. Fingertip somatosensory input through light touch attenuated both AP and ML trunk velocity as much as heavy touch. Light touch also reduced CoP sway compared to no touch, although the decrease in CoP sway was less effective than with heavy touch, particularly on the foam surface. The forces that were applied to the touch plate during light touch preceded movements of the CoP, lending support to the suggestion of a feedforward mechanism in which fingertip inputs trigger the activation of postural muscles for controlling body sway. These results have clinical implications for understanding how patients with peripheral neuropathy may benefit from a cane for postural stability in stance.

  4. Theory and application of dual-transistor charge separation analysis

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Sexton, F.W.; Shaneyfelt, M.R.

    1989-01-01

    The authors describe a dual-transistor charge separation method to evaluate the radiation response of MOS transistors. This method requires that n- and p-channel transistors with identically processed oxides be irradiated under identical conditions at the same oxide electric fields. Combining features of single-transistor midgap and mobility methods, the authors show how one may determine threshold voltage shifts due to oxide-trapped and interface-trapped charge from standard threshold voltage and mobility measurements. These measurements can be made at currents 2-5 orders of magnitude higher than those required for midgap, subthreshold slope, and charge-pumping methods. The dual-transistor method contains no adjustable parameters, and includes an internal self-consistency check. The accuracy of the method is verified by comparison to midgap, subthreshold slope, and charge-pumping methods for several MOS processes and technologies

  5. The free electron gas primary thermometer using an ordinary bipolar junction transistor approaches ppm accuracy

    Science.gov (United States)

    Mimila-Arroyo, J.

    2017-06-01

    In this paper, it is demonstrated that the free electron gas primary thermometer based on a bipolar junction transistor is able to provide the temperature with an accuracy of a few parts per million. Its simple functioning principle exploits the behavior of the collector current when properly biased to extract the temperature. Using general purpose silicon transistors at the water triple point (273.16 K) and gallium melting point (302.9146), an accuracy of a few parts per million has been reached, constituting the simplest and the easiest to operate primary thermometer, that might be considered even for the redefinition of Kelvin.

  6. Transistor-based particle detection systems and methods

    Science.gov (United States)

    Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad Ashraful

    2015-06-09

    Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

  7. Laser Direct Writing Process for Making Electrodes and High-k Sol-Gel ZrO2 for Boosting Performances of MoS2 Transistors.

    Science.gov (United States)

    Kwon, Hyuk-Jun; Jang, Jaewon; Grigoropoulos, Costas P

    2016-04-13

    A series of two-dimensional (2D) transition metal dichalcogenides (TMDCs), including molybdenum disulfide (MoS2), can be attractive materials for photonic and electronic applications due to their exceptional properties. Among these unique properties, high mobility of 2D TMDCs enables realization of high-performance nanoelectronics based on a thin film transistor (TFT) platform. In this contribution, we report highly enhanced field effect mobility (μ(eff) = 50.1 cm(2)/(V s), ∼2.5 times) of MoS2 TFTs through the sol-gel processed high-k ZrO2 (∼22.0) insulator, compared to those of typical MoS2/SiO2/Si structures (μ(eff) = 19.4 cm(2)/(V s)) because a high-k dielectric layer can suppress Coulomb electron scattering and reduce interface trap concentration. Additionally, in order to avoid costly conventional mask based photolithography and define the patterns, we employ a simple laser direct writing (LDW) process. This process allows precise and flexible control with reasonable resolution (up to ∼10 nm), depending on the system, and enables fabrication of arbitrarily patterned devices. Taking advantage of continuing developments in laser technology offers a substantial cost decrease, and LDW may emerge as a promising technology.

  8. Mechanosensitive Channels: In Touch with Piezo

    OpenAIRE

    Xiao, Rui; Xu, X.Z. Shawn

    2010-01-01

    Mechanosensory transduction underlies touch, hearing and proprioception and requires mechanosensitive channels that are directly gated by forces; however, the molecular identities of these channels remain largely elusive. A new study has identified Piezo1 and Piezo2 as a novel class of mechanosensitive channels.

  9. Light touch contact improves pain-evoked postural instability during quiet standing

    DEFF Research Database (Denmark)

    Hirata, Rogerio P.; Christensen, Steffan W.; Agger, Simone

    2018-01-01

    for 40 seconds with their eyes closed. Their postural stability was quantified by the area and velocity of center of pressure (CoP) displacement. The CoP was recorded with and without pain during two different conditions: 1) no touch and 2) the subjects were asked to lightly touch a curtain...

  10. Study on ionizing radiation effects of bipolar transistor with BPSG films

    International Nuclear Information System (INIS)

    Lu Man; Zhang Xiaoling; Xie Xuesong; Sun Jiangchao; Wang Pengpeng; Lu Changzhi; Zhang Yanxiu

    2013-01-01

    Background: Because of the damage induced by ionizing radiation, bipolar transistors in integrated voltage regulator could induce the current gain degradation and increase leakage current. This will bring serious problems to electronic system. Purpose: In order to ensure the reliability of the device work in the radiation environments, the device irradiation reinforcement technology is used. Methods: The characteristics of 60 Co γ irradiation and annealing at different temperatures in bipolar transistors and voltage regulators (JW117) with different passive films for SiO 2 +BPSG+SiO 2 and SiO 2 +SiN have been investigated. Results: The devices with BPSG film enhanced radiation tolerance significantly. Because BPSG films have better absorption for Na + in SiO 2 layer, the surface recombination rate of base region in a bipolar transistor and the excess base current have been reduced. It may be the main reason for BJT with BPSG film having a good radiation hardness. And annealing experiments at different temperatures after irradiation ensure the reliability of the devices with BPSG films. Conclusions: A method of improving the ionizing irradiation hardness of bipolar transistors is proposed. As well as the linear integrated circuits which containing bipolar transistors, an experimental basis for the anti-ionizing radiation effects of bipolar transistors is provided. (authors)

  11. Evaluation of the safety and usability of touch gestures in operating in-vehicle information systems with visual occlusion.

    Science.gov (United States)

    Kim, Huhn; Song, Haewon

    2014-05-01

    Nowadays, many automobile manufacturers are interested in applying the touch gestures that are used in smart phones to operate their in-vehicle information systems (IVISs). In this study, an experiment was performed to verify the applicability of touch gestures in the operation of IVISs from the viewpoints of both driving safety and usability. In the experiment, two devices were used: one was the Apple iPad, with which various touch gestures such as flicking, panning, and pinching were enabled; the other was the SK EnNavi, which only allowed tapping touch gestures. The participants performed the touch operations using the two devices under visually occluded situations, which is a well-known technique for estimating load of visual attention while driving. In scrolling through a list, the flicking gestures required more time than the tapping gestures. Interestingly, both the flicking and simple tapping gestures required slightly higher visual attention. In moving a map, the average time taken per operation and the visual attention load required for the panning gestures did not differ from those of the simple tapping gestures that are used in existing car navigation systems. In zooming in/out of a map, the average time taken per pinching gesture was similar to that of the tapping gesture but required higher visual attention. Moreover, pinching gestures at a display angle of 75° required that the participants severely bend their wrists. Because the display angles of many car navigation systems tends to be more than 75°, pinching gestures can cause severe fatigue on users' wrists. Furthermore, contrary to participants' evaluation of other gestures, several participants answered that the pinching gesture was not necessary when operating IVISs. It was found that the panning gesture is the only touch gesture that can be used without negative consequences when operating IVISs while driving. The flicking gesture is likely to be used if the screen moving speed is slower or

  12. Electron irradiation of power transistors

    International Nuclear Information System (INIS)

    Hower, P.L.; Fiedor, R.J.

    1982-01-01

    A method for reducing storage time and gain parameters in a semiconductor transistor includes the step of subjecting the transistor to electron irradiation of a dosage determined from measurements of the parameters of a test batch of transistors. Reduction of carrier lifetime by proton bombardment and gold doping is mentioned as an alternative to electron irradiation. (author)

  13. Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

    Science.gov (United States)

    Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

    2015-04-08

    Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.

  14. Touching Hearts, Touching Minds: Using Emotion-Based Messaging to Promote Healthful Behavior in the Massachusetts WIC Program

    Science.gov (United States)

    Colchamiro, Rachel; Ghiringhelli, Kara; Hause, Judith

    2010-01-01

    The "Touching Hearts, Touching Minds" initiative was funded through a 2003 United States Department of Agriculture Special Projects grant to revitalize nutrition education and services in the Massachusetts Special Supplemental Nutrition Program for Women, Infants, and Children (WIC) Program. The 30 nutrition education materials and…

  15. Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO2 nanogranular films

    International Nuclear Information System (INIS)

    Zhu, Li Qiang; Chao, Jin Yu; Xiao, Hui

    2014-01-01

    Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO 2 nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics

  16. Touch panel system for control applications

    International Nuclear Information System (INIS)

    Crook, K.; Johnson, R.

    1976-12-01

    The use of finger-sensitive touch panels in association with computer-generated displays for control and monitoring of the Stanford linear accelerator is discussed. This control concept has proven to be very effective. The hardware and software aspects of the Touch Panel portion of the control system are described

  17. Shear wave velocity measurements for differential diagnosis of solid breast masses: a comparison between virtual touch quantification and virtual touch IQ.

    Science.gov (United States)

    Tozaki, Mitsuhiro; Saito, Masahiro; Benson, John; Fan, Liexiang; Isobe, Sachiko

    2013-12-01

    This study compared the diagnostic performance of two shear wave speed measurement techniques in 81 patients with 83 solid breast lesions. Virtual Touch Quantification, which provides single-point shear wave speed measurement capability (SP-SWS), was compared with Virtual Touch IQ, a new 2-D shear wave imaging technique with multi-point shear wave speed measurement capability (2D-SWS). With SP-SWS, shear wave velocity was measured within the lesion ("internal" value) and the marginal areas ("marginal" value). With 2D-SWS, the highest velocity was measured. The marginal values obtained with the SP-SWS and 2D-SWS methods were significantly higher for malignant lesions and benign lesions, respectively (p breast masses. Copyright © 2013 World Federation for Ultrasound in Medicine & Biology. Published by Elsevier Inc. All rights reserved.

  18. Inventions on GUI for Touch Sensitive Screens

    OpenAIRE

    Mishra, Umakant

    2014-01-01

    A touch sensitive screen displays the information on the screen and also receives the input by sensing a user's touch on the same screen. This mechanism facilitates system interaction directly through the screen without needing a mouse or keyboard. This method has the advantage to make the system compact by removing keyboard, mouse and similar interactive device. However there are certain difficulties to implement a touch screen interface. The display screens of portable devices are becoming ...

  19. The Role of Interactional Quality in Learning from Touch Screens during Infancy: Context Matters

    OpenAIRE

    Zack, Elizabeth; Barr, Rachel

    2016-01-01

    Interactional quality has been shown to enhance learning during book reading and play, but has not been examined during touch screen use. Learning to apply knowledge from a touch screen is complex for infants because it involves transfer of learning between a 2-dimensional (2D) screen and 3-dimensional (3D) object in the physical world. This study uses a touch screen procedure to examine interactional quality measured via maternal structuring, diversity of maternal language, and dyadic emot...

  20. The Role of Interactional Quality in Learning from Touch Screens during Infancy: Context Matters

    Directory of Open Access Journals (Sweden)

    Elizabeth Zack

    2016-08-01

    Full Text Available Interactional quality has been shown to enhance learning during book reading and play, but has not been examined during touch screen use. Learning to apply knowledge from a touch screen is complex for infants because it involves transfer of learning between a 2-dimensional (2D screen and 3-dimensional (3D object in the physical world. This study uses a touch screen procedure to examine interactional quality measured via maternal structuring, diversity of maternal language, and dyadic emotional responsiveness and infant outcomes during a transfer of learning task. Fifty 15-month-old infants and their mothers participated in this semi-naturalistic teaching task. Mothers were given a 3D object, and a static image of the object presented on a touch screen. Mothers had 5 minutes to teach their infant that a button on the real toy works in the same way as a virtual button on the touch screen (or vice versa. Overall, 64% of infants learned how to make the button work, transferring learning from the touch screen to the 3D object or vice versa. Infants were just as successful in the 3D to 2D transfer direction as they were in the 2D to 3D transfer direction. A cluster analysis based on emotional responsiveness, the proportion of diverse maternal verbal input, and amount of maternal structuring resulted in two levels of interactional quality: high quality and moderate quality. A logistic regression revealed the level of interactional quality predicted infant transfer. Infants were 19 times more likely to succeed and transfer learning between the touch screen and real object if they were in a high interactional quality dyad, even after controlling for infant activity levels. The present findings suggest that interactional quality between mother and infant plays an important role in making touch screens effective teaching tools for infants’ learning.

  1. Vicarious Social Touch Biases Gazing at Faces and Facial Emotions.

    Science.gov (United States)

    Schirmer, Annett; Ng, Tabitha; Ebstein, Richard P

    2018-02-01

    Research has suggested that interpersonal touch promotes social processing and other-concern, and that women may respond to it more sensitively than men. In this study, we asked whether this phenomenon would extend to third-party observers who experience touch vicariously. In an eye-tracking experiment, participants (N = 64, 32 men and 32 women) viewed prime and target images with the intention of remembering them. Primes comprised line drawings of dyadic interactions with and without touch. Targets comprised two faces shown side-by-side, with one being neutral and the other being happy or sad. Analysis of prime fixations revealed that faces in touch interactions attracted longer gazing than faces in no-touch interactions. In addition, touch enhanced gazing at the area of touch in women but not men. Analysis of target fixations revealed that touch priming increased looking at both faces immediately after target onset, and subsequently, at the emotional face in the pair. Sex differences in target processing were nonsignificant. Together, the present results imply that vicarious touch biases visual attention to faces and promotes emotion sensitivity. In addition, they suggest that, compared with men, women are more aware of tactile exchanges in their environment. As such, vicarious touch appears to share important qualities with actual physical touch. (PsycINFO Database Record (c) 2018 APA, all rights reserved).

  2. The point of practical use for the transistor circuit

    International Nuclear Information System (INIS)

    1996-01-01

    This is comprised of eight chapters and goes as follows; what is transistor? the first step for use of transistor such as connection between power and signal source, static characteristic of transistor and equivalent circuit of transistor, design of easy small-signal amplifier circuit, design for amplification of electric power and countermeasure for prevention of trouble, transistor concerned interface, transistor circuit around micro computer, transistor in active use of FET and power circuit and transistor. It has an appendix on transistor and design of bias of FET circuits like small signal transistor circuit and FET circuit.

  3. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  4. Physical limits of silicon transistors and circuits

    International Nuclear Information System (INIS)

    Keyes, Robert W

    2005-01-01

    A discussion on transistors and electronic computing including some history introduces semiconductor devices and the motivation for miniaturization of transistors. The changing physics of field-effect transistors and ways to mitigate the deterioration in performance caused by the changes follows. The limits of transistors are tied to the requirements of the chips that carry them and the difficulties of fabricating very small structures. Some concluding remarks about transistors and limits are presented

  5. Piezoelectric touch-sensitive flexible hybrid energy harvesting nanoarchitectures

    International Nuclear Information System (INIS)

    Choi, Dukhyun; Kim, Eok Su; Kim, Tae Sang; Lee, Sang Yoon; Choi, Jae-Young; Kim, Jong Min; Lee, Keun Young; Lee, Kang Hyuck; Kim, Sang-Woo

    2010-01-01

    In this work, we report a flexible hybrid nanoarchitecture that can be utilized as both an energy harvester and a touch sensor on a single platform without any cross-talk problems. Based on the electron transport and piezoelectric properties of a zinc oxide (ZnO) nanostructured thin film, a hybrid cell was designed and the total thickness was below 500 nm on a plastic substrate. Piezoelectric touch signals were demonstrated under independent and simultaneous operations with respect to photo-induced charges. Different levels of piezoelectric output signals from different magnitudes of touching pressures suggest new user-interface functions from our hybrid cell. From a signal controller, the decoupled performance of a hybrid cell as an energy harvester and a touch sensor was confirmed. Our hybrid approach does not require additional assembly processes for such multiplex systems of an energy harvester and a touch sensor since we utilize the coupled material properties of ZnO and output signal processing. Furthermore, the hybrid cell can provide a multi-type energy harvester by both solar and mechanical touching energies.

  6. 'Kiss, cuddle, squeeze': the experiences and meaning of touch among parents of children with autism attending a Touch Therapy Programme.

    Science.gov (United States)

    Cullen, Lesley; Barlow, Julie

    2002-09-01

    The aim of this qualitative study was to explore the experiences and meaning of touch between parents and children with autism before and after attending a Touch Therapy Programme. The sample comprised 12 parents (1 father and 11 mothers) of children (1 female and 11 male) with autism. Parents were interviewed before and immediately after the 8-week programme. Pre-programme results suggested that children were controlling the experience of touch. Parents felt 'hurt' in response to the 'aloof nature of autism, and natural parenting instincts (e.g. spontaneous cuddles) were restricted. Post-programme results suggested that children appeared to tolerate touch. Parents reported that routine tasks (e.g. dressing) were accomplished more easily and that children appeared generally more relaxed. Parents reported feeling 'closer' to their children and felt that the touch therapy had opened a communication channel between themselves and their children.

  7. Gate-bias controlled charge trapping as a mechanism for NO2 detection with field-effect transistors

    NARCIS (Netherlands)

    Andringa, A.-M.; Meijboom, J.R.; Smits, E.C.P.; Mathijssen, S.G.J.; Blom, P.W.M.; Leeuw, D.M. de

    2011-01-01

    Detection of nitrogen dioxide, NO2, is required to monitor the air-quality for human health and safety. Commercial sensors are typically chemiresistors, however field-effect transistors are being investigated. Although numerous investigations have been reported, the NO2 sensing mechanism is not

  8. Snap clutch, a moded approach to solving the Midas touch problem.

    OpenAIRE

    Istance, Howell; Bates, R.; Hyrskykari, A.; Vickers, Stephen

    2008-01-01

    This paper proposes a simple approach to an old problem, that of the 'Midas Touch'. This uses modes to enable different types of mouse behavior to be emulated with gaze and by using gestures to switch between these modes. A light weight gesture is also used to switch gaze control off when it is not needed, thereby removing a major cause of the problem. The ideas have been trialed in Second Life, which is characterized by a feature-rich of set of interaction techniques and a 3D graphical world...

  9. Usability of Web Browsers for Multi-touch Platforms

    OpenAIRE

    Khan, Hasan Zaryab

    2010-01-01

    Multi-touch interface is an improvement within the existing touch screen technology, which allows the user to operate the electronic visual display with finger gestures. This work examines how good current web browsers are positioned to avail of the next generation HCI, currently dubbed Natural User Interfaces which are largely multi-touch interfaces at this point in time.

  10. Schottky barrier diode embedded AlGaN/GaN switching transistor

    International Nuclear Information System (INIS)

    Park, Bong-Ryeol; Lee, Jung-Yeon; Lee, Jae-Gil; Lee, Dong-Myung; Cha, Ho-Young; Kim, Moon-Kyung

    2013-01-01

    We developed a Schottky barrier diode (SBD) embedded AlGaN/GaN switching transistor to allow negative current flow during off-state condition. An SBD was embedded in a recessed normally-off AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET). The fabricated device exhibited normally-off characteristics with a gate threshold voltage of 2.8 V, a diode turn-on voltage of 1.2 V, and a breakdown voltage of 849 V for the anode-to-drain distance of 8 µm. An on-resistance of 2.66 mΩcm 2 was achieved at a gate voltage of 16 V in the forward transistor mode. Eliminating the need for an external diode, the SBD embedded switching transistor has advantages of significant reduction in parasitic inductance and chip area. (paper)

  11. The design of light pipe with microstructures for touch screen

    Science.gov (United States)

    Yang, Bo; Lu, Kan; Liu, Pengfei; Wei, Xiaona

    2010-11-01

    Touch screen has a very wide range of applications. Most of them are used in public information inquiries, for instance, service inquiries in telecommunication bureau, tax bureau, bank system, electric department, etc...Touch screen can also be used for entertainment and virtual reality applications too. Traditionally, touch screen was composed of pairs of infrared LED and correspondent receivers which were all installed in the screen frame. Arrays of LED were set in the adjacent sides of the frame of an infrared touch screen while arrays of the infrared receivers were fixed in each opposite side, so that the infrared detecting network was formed. While the infrared touch screen has some technical limitations nowadays such as the low resolution, limitations of touching methods and fault response due to environmental disturbances. The plastic material has a relatively high absorption rate for infrared light, which greatly limits the size of the touch screen. Our design uses laser diode as source and change the traditional inner structure of touch screen by using a light pipe with microstructures. The geometric parameters of the light pipe and the microstructures were obtained through equation solving. Simulation results prove that the design method for touch screen proposed in this paper could achieve high resolution and large size of touch screen.

  12. Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.

    Science.gov (United States)

    Wu, Di; Li, Xiao; Luan, Lan; Wu, Xiaoyu; Li, Wei; Yogeesh, Maruthi N; Ghosh, Rudresh; Chu, Zhaodong; Akinwande, Deji; Niu, Qian; Lai, Keji

    2016-08-02

    The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for TMD applications in electronics and photonics. Because of the imperfections, electrons moving on these 2D crystals experience a spatially nonuniform Coulomb environment, whose effect on the charge transport has not been microscopically studied. Here, we report the mesoscopic conductance mapping in monolayer and few-layer MoS2 field-effect transistors by microwave impedance microscopy (MIM). The spatial evolution of the insulator-to-metal transition is clearly resolved. Interestingly, as the transistors are gradually turned on, electrical conduction emerges initially at the edges before appearing in the bulk of MoS2 flakes, which can be explained by our first-principles calculations. The results unambiguously confirm that the contribution of edge states to the channel conductance is significant under the threshold voltage but negligible once the bulk of the TMD device becomes conductive. Strong conductance inhomogeneity, which is associated with the fluctuations of disorder potential in the 2D sheets, is also observed in the MIM images, providing a guideline for future improvement of the device performance.

  13. The Benefits of Single-Touch Screens in Intersubjective Meaning Making

    OpenAIRE

    Davidsen, Jacob; Christiansen, Ellen Tove

    2013-01-01

    What are the benefits of single-touch screens? The paper presents findings of onevideo extract from ten months of observation of single-touch screen interaction among 8-9 year-old children. Recent studies of collaborative learning mediated by digital touch screens and tabletops emphasize the possibilities for equal levels of verbal and physical participation.Additionally, these studies suggest that multi-touch technologies offer more task-oriented activities compared to single-touch screen in...

  14. Caring touch--patients' experiences in an anthroposophic clinical context.

    Science.gov (United States)

    Ozolins, Lise-Lotte; Hörberg, Ulrica; Dahlberg, Karin

    2015-12-01

    This study describes the phenomenon of caring touch from the patients' perspective in an anthroposophic clinical context where caring touch is often used to promote health and alleviate suffering. The aim of the study was to explore and phenomenologically describe the phenomenon of caring touch from the patients' perspectives. The study has been carried out with a Reflective Lifeworld Research approach in order to understand and describe human existential phenomena. Ten female patients were interviewed in an anthroposophic clinic in Sweden. The findings show how caring touch has multifaceted meanings and makes the patients' feel present and anchored in a meaningful context. The patients' feel that they are seen, accepted and confirmed. Furthermore, touch creates a caring space where the patients become receptive for care and has the power to alleviate the patients' suffering, as well as to frighten and cause or worsen the suffering. In order to take advantage of the caring potential, the patient needs to be invited to a respectful and sensitive form of touch. An interpersonal flexible space is necessary where the touch can be effective, and where a dynamic interplay can develop. In conclusion, caring touch is an opportunity for carers to support well-being and health. The carers need to approach their patients in both a sensitive and reflective way. A caring science perspective can serve as a help to further understand touch as a unique caring act. © 2015 Nordic College of Caring Science.

  15. Children's Learning from Touch Screens: A Dual Representation Perspective.

    Science.gov (United States)

    Sheehan, Kelly J; Uttal, David H

    2016-01-01

    Parents and educators often expect that children will learn from touch screen devices, such as during joint e-book reading. Therefore an essential question is whether young children understand that the touch screen can be a symbolic medium - that entities represented on the touch screen can refer to entities in the real world. Research on symbolic development suggests that symbolic understanding requires that children develop dual representational abilities, meaning children need to appreciate that a symbol is an object in itself (i.e., picture of a dog) while also being a representation of something else (i.e., the real dog). Drawing on classic research on symbols and new research on children's learning from touch screens, we offer the perspective that children's ability to learn from the touch screen as a symbolic medium depends on the effect of interactivity on children's developing dual representational abilities. Although previous research on dual representation suggests the interactive nature of the touch screen might make it difficult for young children to use as a symbolic medium, the unique interactive affordances may help alleviate this difficulty. More research needs to investigate how the interactivity of the touch screen affects children's ability to connect the symbols on the screen to the real world. Given the interactive nature of the touch screen, researchers and educators should consider both the affordances of the touch screen as well as young children's cognitive abilities when assessing whether young children can learn from it as a symbolic medium.

  16. Quantum ballistic transistor and low noise HEMT for cryo-electronics lower than 4.2 K; Transistor balistique quantique et HEMT bas-bruit pour la cryoelectronique inferieure a 4.2 K

    Energy Technology Data Exchange (ETDEWEB)

    Gremion, E

    2008-01-15

    Next generations of cryo-detectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryo-electronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryo-electronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4.2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 {mu}W. Under the above experimental conditions, an equivalent input voltage noise of 1.2 nV/{radical}(Hz) at 1 kHz and 0.12 nV/{radical}(Hz) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF. (author)

  17. Grab and Touch

    DEFF Research Database (Denmark)

    Pedersen, Esben Warming

    , by supporting multi-touch control, and by allowing efficient interaction with multiple tangibles. These benefits were evaluated in a study that shows that rotation-based interactions were more efficient with Tangible Bots. A second study demonstrated usefulness by observing how electronic musicians use Tangible......Tangible user interfaces seek to make computing natural and ubiquitous by coupling digital information with physical objects. The thesis contributes to this field by presenting empirical research on tangible computing and touch interaction. In the area of tangible computing, the thesis first...... and the results suggest that mixiTUI improved both the audience’s and the musician’s experience. To enhance the interaction with tangible user interfaces,we developed Tangible Bots, a set of active, motorized tangibles. Tangible Bots assist users by providing haptic feedback, by correcting interaction errors...

  18. Effect of 1MeV electron beam on transistors and circuits

    International Nuclear Information System (INIS)

    Lee, Tae Hoon

    1998-02-01

    It has been known that semiconductor devices operating in a radiation environment exhibited significant alterations of their electrical responses. Since an electron beam bombardment produces lattice damage in Si and charged defects in SiO 2 , several electrical parameters of transistors exhibit significant changes. Those parameters are the current gain of BJT (Bipolar Junction Transistor) and the threshold voltage of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The degradation of transistors brings about that of circuits. This paper presents the results of experiments and simulations performed to study the effects of 1MeV electron beam irradiation on selected silicon transistors and circuits. For BJTs, the current gains of npn (2N3904) and pnp (2N3906) linearly decreased as the irradiation dose increased, and from this result, the damage constants, Ks were obtained as 13.65 for 2N3904 and 22.52 for 2N3906 in MGy, indicating a more stable operation in the electron radiation environment for pnp than that for npn. The decrease of current gain was due to that of minority-carrier lifetime in the base region. For MOSFETs (CD4007s), the threshold voltages of NMOS and PMOS shifted to the lower values, which was resulted from the accumulation of charge in SiO 2 . The charges could be categorized into fixed oxide charge and interfacial trap charge. From experimental results, the amounts of the induced charges could be quantitatively estimated. These degradations of transistors brought about the decrease in the voltage gain of CE (Common Emitter) amplifier and the shifts in the inverting voltage of inverter. Additionally, PSpice simulations of these circuits were carried out by modeling of irradiated transistors. The comparison of simulation with experiment showed the relatively good agreement of simulation for the degradation of circuits after irradiation

  19. Combinatorial study of zinc tin oxide thin-film transistors

    Science.gov (United States)

    McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

    2008-01-01

    Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

  20. Does affective touch influence the virtual reality full body illusion?

    Science.gov (United States)

    de Jong, Jutta R; Keizer, Anouk; Engel, Manja M; Dijkerman, H Chris

    2017-06-01

    The sense of how we experience our physical body as our own represents a fundamental component of human self-awareness. Body ownership can be studied with bodily illusions which are generated by inducing a visuo-tactile conflict where individuals experience illusionary ownership over a fake body or body part, such as a rubber hand. Previous studies showed that different types of touch modulate the strength of experienced ownership over a rubber hand. Specifically, participants experienced more ownership after the rubber hand illusion was induced through affective touch vs non-affective touch. It is, however, unclear whether this effect would also occur for an entire fake body. The aim of this study was, therefore, to investigate whether affective touch modulates the strength of ownership in a virtual reality full body illusion. To elicit this illusion, we used slow (3 cm/s; affective touch) and fast (30 cm/s; non-affective touch) stroking velocities on the participants' abdomen. Both stroking velocities were performed either synchronous or asynchronous (control condition), while participants viewed a virtual body from a first-person-perspective. In our first study, we found that participants experienced more subjective ownership over a virtual body in the affective touch condition, compared to the non-affective touch condition. In our second study, we found higher levels of subjective ownership for synchronous stimulation, compared to asynchronous, for both touch conditions, but failed to replicate the findings from study 1 that show a difference between affective and non-affective touch. We, therefore, cannot conclude unequivocally that affective touch enhances the full-body illusion. Future research is required to study the effects of affective touch on body ownership.

  1. Fast feedback in active sensing: touch-induced changes to whisker-object interaction.

    Directory of Open Access Journals (Sweden)

    Dudi Deutsch

    Full Text Available Whisking mediated touch is an active sense whereby whisker movements are modulated by sensory input and behavioral context. Here we studied the effects of touching an object on whisking in head-fixed rats. Simultaneous movements of whiskers C1, C2, and D1 were tracked bilaterally and their movements compared. During free-air whisking, whisker protractions were typically characterized by a single acceleration-deceleration event, whisking amplitude and velocity were correlated, and whisk duration correlated with neither amplitude nor velocity. Upon contact with an object, a second acceleration-deceleration event occurred in about 25% of whisk cycles, involving both contacting (C2 and non-contacting (C1, D1 whiskers ipsilateral to the object. In these cases, the rostral whisker (C2 remained in contact with the object throughout the double-peak phase, which effectively prolonged the duration of C2 contact. These "touch-induced pumps" (TIPs were detected, on average, 17.9 ms after contact. On a slower time scale, starting at the cycle following first touch, contralateral amplitude increased while ipsilateral amplitude decreased. Our results demonstrate that sensory-induced motor modulations occur at various timescales, and directly affect object palpation.

  2. Homo Tangens, or Man Touching and Tangible

    OpenAIRE

    J Mizinska

    2011-01-01

    The article is devoted to the analysis of the concept sense of touch, which is considered in all its aspects and dimensions. The author's aim is to determine what is touch in terms of philosophy, what types it has and what traditional functions (i.e. prior to the emergence of virtual reality) each of these functions performed. The conducted research allows the author to make a conclusion about the importance of perceiving the role and significance of man as a homo tangens - man touching and t...

  3. Tuning the hysteresis voltage in 2D multilayer MoS{sub 2} FETs

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Jie, E-mail: jiangjie@csu.edu.cn; Zheng, Zhouming; Guo, Junjie

    2016-10-01

    The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS{sub 2} transistors. It was found that high temperature (175 °C) annealing in air could increase the hysteresis voltage from 8.0 V (original device) to 28.4 V, while a next vacuum annealing would reduce the hysteresis voltage to be only 2.0 V. An energyband diagram model based on electron trapping/detrapping due to oxygen adsorption is proposed to understand the hysteresis mechanism in multilayer MoS{sub 2} FET. This simple method for tuning the hysteresis voltage of MoS{sub 2} FET can make a significant step toward 2D nanoelectronic device applications.

  4. Mirror Neurons and Mirror-Touch Synesthesia.

    Science.gov (United States)

    Linkovski, Omer; Katzin, Naama; Salti, Moti

    2016-05-30

    Since mirror neurons were introduced to the neuroscientific community more than 20 years ago, they have become an elegant and intuitive account for different cognitive mechanisms (e.g., empathy, goal understanding) and conditions (e.g., autism spectrum disorders). Recently, mirror neurons were suggested to be the mechanism underlying a specific type of synesthesia. Mirror-touch synesthesia is a phenomenon in which individuals experience somatosensory sensations when seeing someone else being touched. Appealing as it is, careful delineation is required when applying this mechanism. Using the mirror-touch synesthesia case, we put forward theoretical and methodological issues that should be addressed before relying on the mirror-neurons account. © The Author(s) 2016.

  5. Ionic signaling in plant responses to gravity and touch

    Science.gov (United States)

    Fasano, Jeremiah M.; Massa, Gioia D.; Gilroy, Simon

    2002-01-01

    Touch and gravity are two of the many stimuli that plants must integrate to generate an appropriate growth response. Due to the mechanical nature of both of these signals, shared signal transduction elements could well form the basis of the cross-talk between these two sensory systems. However, touch stimulation must elicit signaling events across the plasma membrane whereas gravity sensing is thought to represent transformation of an internal force, amyloplast sedimentation, to signal transduction events. In addition, factors such as turgor pressure and presence of the cell wall may also place unique constraints on these plant mechanosensory systems. Even so, the candidate signal transduction elements in both plant touch and gravity sensing, changes in Ca2+, pH and membrane potential, do mirror the known ionic basis of signaling in animal mechanosensory cells. Distinct spatial and temporal signatures of Ca2+ ions may encode information about the different mechanosignaling stimuli. Signals such as Ca2+ waves or action potentials may also rapidly transfer information perceived in one cell throughout a tissue or organ leading to the systemic reactions characteristic of plant touch and gravity responses. Longer-term growth responses are likely sustained via changes in gene expression and asymmetries in compounds such as inositol-1,4,5-triphosphate (IP3) and calmodulin. Thus, it seems likely that plant mechanoperception involves both spatial and temporal encoding of information at all levels, from the cell to the whole plant. Defining this patterning will be a critical step towards understanding how plants integrate information from multiple mechanical stimuli to an appropriate growth response.

  6. Total dose effects on the matching properties of deep submicron MOS transistors

    International Nuclear Information System (INIS)

    Wang Yuxin; Hu Rongbin; Li Ruzhang; Chen Guangbing; Fu Dongbing; Lu Wu

    2014-01-01

    Based on 0.18 μm MOS transistors, for the first time, the total dose effects on the matching properties of deep submicron MOS transistors are studied. The experimental results show that the total dose radiation magnifies the mismatch among identically designed MOS transistors. In our experiments, as the radiation total dose rises to 200 krad, the threshold voltage and drain current mismatch percentages of NMOS transistors increase from 0.55% and 1.4% before radiation to 17.4% and 13.5% after radiation, respectively. PMOS transistors seem to be resistant to radiation damage. For all the range of radiation total dose, the threshold voltage and drain current mismatch percentages of PMOS transistors keep under 0.5% and 2.72%, respectively. (semiconductor devices)

  7. The Positive Effects of Hydrophobic Fluoropolymers on the Electrical Properties of MoS2 Transistors

    Directory of Open Access Journals (Sweden)

    Somayyeh Rahimi

    2016-08-01

    Full Text Available We report the improvement of the electrical performance of field effect transistors (FETs fabricated on monolayer chemical vapor deposited (CVD MoS2, by applying an interacting fluoropolymer capping layer (Teflon-AF. The electrical characterizations of more than 60 FETs, after applying Teflon-AF cap, show significant improvement of the device properties and reduced device to device variation. The improvement includes: 50% reduction of the average gate hysteresis, 30% reduction of the subthreshold swing and about an order of magnitude increase of the current on-off ratio. These favorable changes in device performance are attributed to the reduced exposure of MoS2 channels to the adsorbates in the ambient which can be explained by the polar nature of Teflon-AF cap. A positive shift in the threshold voltage of all the measured FETs is observed, which translates to the more desirable enhancement mode transistor characteristics.

  8. The Will to Touch: David Copperfield’s Hand

    Directory of Open Access Journals (Sweden)

    Pamela K. Gilbert

    2014-10-01

    Full Text Available In the nineteenth century, touch was considered to be a more privileged sense than has been generally noted, and the hand was pre-eminently the site of active touching. The hand comes newly to rival the face in descriptive significance in mid-nineteenth-century fiction, and reflects contemporary notions of the role of touch in the exercise of the will and the development of the sensorium. This article explores medical and philosophical understandings of embodied touch within the period, and examines why the hand emerged as a focal point for scientific, poetic, and popular discussion. Such scientists as Charles Bell, Herbert Spencer, and Alexander Bain tend to work within two paradigms: the hand as a site of sensory input that forms a conduit between inner and outer worlds, and the hand as an instrument of the will. The article explores Dickens's use of these ideas about touch and development in his 1850 'Bildungsroman', 'David Copperfield'. David struggles to establish his proper status as a middle-class male, in part by learning to use his hands to impose his own will and to resist the dominance of inappropriate others through touch.

  9. Uma ferramenta para automação da geração do leiaute de circuitos analógicos sobre uma matriz de transistores MOS pré-difundidos

    OpenAIRE

    Alessandro Gonçalves Girardi

    2003-01-01

    Este trabalho apresenta o LIT, uma ferramenta de auxílio ao projeto de circuitos integrados analógicos que utiliza a técnica da associação trapezoidal de transistores (TAT) sobre uma matriz digital pré-difundida. A principal característica é a conversão de cada transistor simples de um circuito analógico em uma associação TAT equivalente, seguido da síntese automática do leiaute da associação séria-paralela de transistores. A ferramenta é baseada na matriz SOT (sea-of-transistors), cuja arqui...

  10. Transparent and Flexible Zinc Tin Oxide Thin Film Transistors and Inverters using Low-pressure Oxygen Annealing Process

    Science.gov (United States)

    Lee, Kimoon; Kim, Yong-Hoon; Kim, Jiwan; Oh, Min Suk

    2018-05-01

    We report on the transparent and flexible enhancement-load inverters which consist of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated at low process temperature. To control the electrical characteristics of oxide TFTs by oxygen vacancies, we applied low-pressure oxygen rapid thermal annealing (RTA) process to our devices. When we annealed the ZTO TFTs in oxygen ambient of 2 Torr, they showed better electrical characteristics than those of the devices annealed in the air ambient of 760 Torr. To realize oxide thin film transistor and simple inverter circuits on flexible substrate, we annealed the devices in O2 of 2 Torr at 150° C and could achieve the decent electrical properties. When we used transparent conductive oxide electrodes such as indium zinc oxide (IZO) and indium tin oxide (ITO), our transparent and flexible inverter showed the total transmittance of 68% in the visible range and the voltage gain of 5. And the transition voltage in voltage transfer curve was located well within the range of operation voltage.

  11. Children's Learning from Touch Screens: A Dual Representation perspective

    Directory of Open Access Journals (Sweden)

    Kelly Jean Sheehan

    2016-08-01

    Full Text Available Parents and educators often expect that children will learn from touch screen devices, such as during joint e-book reading. Therefore an essential question is whether young children understand that the touch screen can be a symbolic medium – that entities represented on the touch screen can refer to entities in the real world. Research on symbolic development suggests that symbolic understanding requires that children develop dual representational abilities, meaning children need to appreciate that a symbol is an object in itself (i.e., picture of a dog while also being a representation of something else (i.e., the real dog. Drawing on classic research on symbols and new research on children’s learning from touch screens, we offer the perspective that children’s ability to learn from the touch screen as a symbolic medium depends on the effect of interactivity on children’s developing dual representational abilities. Although previous research on dual representation suggests the interactive nature of the touch screen might make it difficult for young children to use as a symbolic medium, the unique interactive affordances may help alleviate this difficulty. More research needs to investigate how the interactivity of the touch screen affects children’s ability to connect the symbols on the screen to the real world. Given the interactive nature of the touch screen, researchers and educators should consider both the affordances of the touch screen as well as young children’s cognitive abilities when assessing whether young children can learn from it as a symbolic medium.

  12. MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.

    Science.gov (United States)

    He, Xuexia; Chow, WaiLeong; Liu, Fucai; Tay, BengKang; Liu, Zheng

    2017-01-01

    2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS 2 ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS 2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm 2 V -1 s -1 , respectively. The ambipolar behavior is explained based on the band alignment of MoS 2 and rubrene. Furthermore, being a building block, the MoS 2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Homo Tangens, or Man Touching and Tangible

    Directory of Open Access Journals (Sweden)

    J Mizinska

    2011-09-01

    Full Text Available The article is devoted to the analysis of the concept sense of touch, which is considered in all its aspects and dimensions. The author's aim is to determine what is touch in terms of philosophy, what types it has and what traditional functions (i.e. prior to the emergence of virtual reality each of these functions performed. The conducted research allows the author to make a conclusion about the importance of perceiving the role and significance of man as a homo tangens - man touching and tangible.

  14. The Role of Interactional Quality in Learning from Touch Screens during Infancy: Context Matters.

    Science.gov (United States)

    Zack, Elizabeth; Barr, Rachel

    2016-01-01

    Interactional quality has been shown to enhance learning during book reading and play, but has not been examined during touch screen use. Learning to apply knowledge from a touch screen is complex for infants because it involves transfer of learning between a two-dimensional (2D) screen and three-dimensional (3D) object in the physical world. This study uses a touch screen procedure to examine interactional quality measured via maternal structuring, diversity of maternal language, and dyadic emotional responsiveness and infant outcomes during a transfer of learning task. Fifty 15-month-old infants and their mothers participated in this semi-naturalistic teaching task. Mothers were given a 3D object, and a static image of the object presented on a touch screen. Mothers had 5 min to teach their infant that a button on the real toy works in the same way as a virtual button on the touch screen (or vice versa). Overall, 64% of infants learned how to make the button work, transferring learning from the touch screen to the 3D object or vice versa. Infants were just as successful in the 3D to 2D transfer direction as they were in the 2D to 3D transfer direction. A cluster analysis based on emotional responsiveness, the proportion of diverse maternal verbal input, and amount of maternal structuring resulted in two levels of interactional quality: high quality and moderate quality. A logistic regression revealed the level of interactional quality predicted infant transfer. Infants were 19 times more likely to succeed and transfer learning between the touch screen and real object if they were in a high interactional quality dyad, even after controlling for infant activity levels. The present findings suggest that interactional quality between mother and infant plays an important role in making touch screens effective teaching tools for infants' learning.

  15. Archaeologies of touch interfacing with haptics from electricity to computing

    CERN Document Server

    Parisi, David

    2018-01-01

    David Parisi offers the first full history of new computing technologies known as haptic interfaces--which use electricity, vibration, and force feedback to stimulate the sense of touch--showing how the efforts of scientists and engineers over the past 300 years have gradually remade and redefined our sense of touch. Archaeologies of Touch offers a timely and provocative engagement with the long history of touch technology that helps us confront and question the power relations underpinning the project of giving touch its own set of technical media.

  16. Touch Surgery™

    African Journals Online (AJOL)

    Arun Kumar Agnihotri

    Available for Android and iOS. With regard to the teaching of undergraduate surgery, there is a lot of ... Until now. We now have Touch Surgery™, an app available for the iOS and Android platforms. This is a ... authentication of professional standing which is limited for users in most countries. The use of the app, however, for ...

  17. Power transistor module for high current applications

    International Nuclear Information System (INIS)

    Cilyo, F.F.

    1975-01-01

    One of the parts needed for the control system of the 400-GeV accelerator at Fermilab was a power transistor with a safe operating area of 1800A at 50V, dc current gain of 100,000 and 20 kHz bandwidth. Since the commercially available discrete devices and power hybrid packages did not meet these requirements, a power transistor module was developed which performed satisfactorily. By connecting 13 power transistors in parallel, with due consideration for network and heat dissipation problems, and by driving these 13 with another power transistor, a super power transistor is made, having an equivalent current, power, and safe operating area capability of 13 transistors. For higher capabilities, additional modules can be conveniently added. (auth)

  18. High-mobility pyrene-based semiconductor for organic thin-film transistors.

    Science.gov (United States)

    Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

    2013-05-01

    Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

  19. Organic transistors with high thermal stability for medical applications.

    Science.gov (United States)

    Kuribara, Kazunori; Wang, He; Uchiyama, Naoya; Fukuda, Kenjiro; Yokota, Tomoyuki; Zschieschang, Ute; Jaye, Cherno; Fischer, Daniel; Klauk, Hagen; Yamamoto, Tatsuya; Takimiya, Kazuo; Ikeda, Masaaki; Kuwabara, Hirokazu; Sekitani, Tsuyoshi; Loo, Yueh-Lin; Someya, Takao

    2012-03-06

    The excellent mechanical flexibility of organic electronic devices is expected to open up a range of new application opportunities in electronics, such as flexible displays, robotic sensors, and biological and medical electronic applications. However, one of the major remaining issues for organic devices is their instability, especially their thermal instability, because low melting temperatures and large thermal expansion coefficients of organic materials cause thermal degradation. Here we demonstrate the fabrication of flexible thin-film transistors with excellent thermal stability and their viability for biomedical sterilization processes. The organic thin-film transistors comprise a high-mobility organic semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, and thin gate dielectrics comprising a 2-nm-thick self-assembled monolayer and a 4-nm-thick aluminium oxide layer. The transistors exhibit a mobility of 1.2 cm(2) V(-1)s(-1) within a 2 V operation and are stable even after exposure to conditions typically used for medical sterilization.

  20. Graphene-graphite oxide field-effect transistors.

    Science.gov (United States)

    Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

    2012-03-14

    Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

  1. Impact of Process Technologies on ELDRS of Bipolar Transistors

    International Nuclear Information System (INIS)

    Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng; Zheng Yuzhan

    2010-01-01

    Radiation effects under different dose rates and annealing behaviors of domestic bipolar transistors, with same manufacture technology, were investigated.These transistors include NPN transistors of various emitter area, and LPNP transistors with different doping concentrations in emitter. It is shown that different types of transistors have different radiation responses. The results of NPN transistors show that more degradation occurs at less emitter area. Yet, the results of LPNP transistors demonstrate that transistors with lightly doped emitter are more sensitive to radiation, compared with heavily doped emitter. Finally,the mechanisms of the difference between various radiation responses were analyzed. (authors)

  2. Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO{sub 2} nanogranular films

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn; Chao, Jin Yu; Xiao, Hui [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2014-12-15

    Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO{sub 2} nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics.

  3. Distributed amplifier using Josephson vortex flow transistors

    International Nuclear Information System (INIS)

    McGinnis, D.P.; Beyer, J.B.; Nordman, J.E.

    1986-01-01

    A wide-band traveling wave amplifier using vortex flow transistors is proposed. A vortex flow transistor is a long Josephson junction used as a current controlled voltage source. The dual nature of this device to the field effect transistor is exploited. A circuit model of this device is proposed and a distributed amplifier utilizing 50 vortex flow transistors is predicted to have useful gain to 100 GHz

  4. Mechanical touch responses of Arabidopsis TCH1-3 mutant roots on inclined hard-agar surface

    Science.gov (United States)

    Zha, Guodong; Wang, Bochu; Liu, Junyu; Yan, Jie; Zhu, Liqing; Yang, Xingyan

    2016-01-01

    The gravity-induced mechanical touch stimulus can affect plant root architecture. Mechanical touch responses of plant roots are an important aspect of plant root growth and development. Previous studies have reported that Arabidopsis TCH1-3 genes are involved in mechano-related events, how-ever, the physiological functions of TCH1-3 genes in Arabidopsis root mechanoresponses remain unclear. In the present study, we applied an inclined hard agar plate method to produce mechanical touch stimulus, and provided evidence that altered mechanical environment could influence root growth. Furthermore, tch1-3 Arabidopsis mutants were investigated on inclined agar surfaces to explore the functions of TCH1-3 genes on Arabidopsis root mechanoresponses. The results showed that two tch2 mutants, cml24-2 and cml24-4, exhibited significantly reduced root length, biased skewing, and decreased density of lateral root. In addition, primary root length and density of lateral root of tch3 (cml12-2) was significantly decreased on inclined agar surfaces. This study indicates that the tch2 and tch3 mutants are hypersensitive to mechanical touch stimulus, and TCH2 (CML24-2 and CML24-4) and TCH3 (CML12-2) genes may participate in the mechanical touch response of Arabidopsis roots.

  5. Embodied terror management: interpersonal touch alleviates existential concerns among individuals with low self-esteem.

    Science.gov (United States)

    Koole, Sander L; Tjew A Sin, Mandy; Schneider, Iris K

    2014-01-01

    Individuals with low (rather than high) self-esteem often struggle with existential concerns. In the present research, we examined whether these existential concerns may be alleviated by seemingly trivial experiences of both real and simulated interpersonal touch. A brief touch on the shoulder by a female experimenter led individuals with low self-esteem to experience less death anxiety (Study 1) and more social connectedness after a death reminder (Study 2). Reminding individuals with low self-esteem of death increased their desire for touch, as indicated by higher value estimates of a teddy bear, a toy animal that simulates interpersonal touch (Study 3). Finally, holding a teddy bear (vs. a cardboard box) led individuals with low self-esteem to respond to a death reminder with less defensive ethnocentrism (Study 4). Individuals with high self-esteem were unaffected by touch (Studies 1-4). These findings highlight the existential significance of embodied touch experiences, particularly for individuals with low self-esteem.

  6. Clinical holistic medicine: holistic sexology and treatment of vulvodynia through existential therapy and acceptance through touch.

    Science.gov (United States)

    Ventegodt, Søren; Morad, Mohammed; Hyam, Eytan; Merrick, Joav

    2004-08-04

    Sexual problems are found in four major forms: lack of libido, lack of arousal and potency, pain and discomfort during intercourse, and lack of orgasm. It is possible to work with a holistic approach to sexology in the clinic in order to find and repair the negative beliefs, repressions of love, and lack of purpose of life, which are the core to problems like arousal, potency, and pain with repression of gender and sexuality. It is important not to focus only on the gender and genitals in understanding the patient"s sexual problems. It is of equal importance not to neglect the body, its parts, and the feelings and emotions connected to them. Shame, guilt, helplessness, fear, disgust, anger, hatred, and other strong feelings are almost always an important part of a sexual problem and these feelings are often "held" by the tissue of the pelvis and sexual organs. The patient with sexual problems can be helped both by healing existence in general and by discharging old painful emotions from the tissues. The later process of local healing is often facilitated by a simple technique: accepting contact via touch. This is a very simple technique, where the self-acceptance of the patient is to be promoted, for example, asking the female patient to put her hand on her stomach (uterus) or vulva, after which the holistic physician puts his hand supportively around hers. When done with care and after obtaining the necessary trust of the patient, this aspect of holding often releases the old negative emotions of shame bound to the touched areas. Afterwards, the emotional problems become a subject for conversational therapy and further holistic processing. Primary vulvodynia seems to be one of the diseases that can be cured after only a few successful sessions of working with acceptance through touch. The technique can be used as an isolated procedure or as a part of a pelvic examination. When touching the genitals with the intention of sexual healing, a written therapeutic

  7. Clinical Holistic Medicine: Holistic Sexology and Treatment of Vulvodynia Through Existential Therapy and Acceptance Through Touch

    Directory of Open Access Journals (Sweden)

    Søren Ventegodt

    2004-01-01

    Full Text Available Sexual problems are found in four major forms: lack of libido, lack of arousal and potency, pain and discomfort during intercourse, and lack of orgasm. It is possible to work with a holistic approach to sexology in the clinic in order to find and repair the negative beliefs, repressions of love, and lack of purpose of life, which are the core to problems like arousal, potency, and pain with repression of gender and sexuality. It is important not to focus only on the gender and genitals in understanding the patient's sexual problems. It is of equal importance not to neglect the body, its parts, and the feelings and emotions connected to them. Shame, guilt, helplessness, fear, disgust, anger, hatred, and other strong feelings are almost always an important part of a sexual problem and these feelings are often “held” by the tissue of the pelvis and sexual organs. The patient with sexual problems can be helped both by healing existence in general and by discharging old painful emotions from the tissues. The later process of local healing is often facilitated by a simple technique: accepting contact via touch. This is a very simple technique, where the self-acceptance of the patient is to be promoted, for example, asking the female patient to put her hand on her stomach (uterus or vulva, after which the holistic physician puts his hand supportively around hers. When done with care and after obtaining the necessary trust of the patient, this aspect of holding often releases the old negative emotions of shame bound to the touched areas. Afterwards, the emotional problems become a subject for conversational therapy and further holistic processing. Primary vulvodynia seems to be one of the diseases that can be cured after only a few successful sessions of working with acceptance through touch. The technique can be used as an isolated procedure or as a part of a pelvic examination. When touching the genitals with the intention of sexual healing, a

  8. Contact high: Mania proneness and positive perception of emotional touches.

    Science.gov (United States)

    Piff, Paul K; Purcell, Amanda; Gruber, June; Hertenstein, Matthew J; Keltner, Dacher

    2012-01-01

    How do extreme degrees of positive emotion-such as those characteristic of mania-influence emotion perception? The present study investigated how mania proneness, assessed using the Hypomanic Personality Scale, influences the perception of emotion via touch. Using a validated dyadic interaction paradigm for communicating emotion through touch (Hertenstein, Keltner, App, Bulleit, & Jaskolka, 2006), participants (N=53) received eight different touches to their forearm from a stranger and then identified the emotion via forced-choice methodology. Mania proneness predicted increased overall accuracy in touch perception, particularly for positive emotion touches, as well as the over-attribution of positive and under-attribution of negative emotions across all touches. These findings highlight the effects of positive emotion extremes on the perception of emotion in social interactions.

  9. Photosensitive graphene transistors.

    Science.gov (United States)

    Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

    2014-08-20

    High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Light programmable organic transistor memory device based on hybrid dielectric

    Science.gov (United States)

    Ren, Xiaochen; Chan, Paddy K. L.

    2013-09-01

    We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

  11. [Effects of self-touching behavior on the performance of lexical retrieval].

    Science.gov (United States)

    Fujii, M

    1997-08-01

    In this study, effects of self-touching behavior on the performance of lexical retrieval were investigated. In Experiment 1, 52 women were required to retrieve Japanese idioms, and to recall them approximately 2 minutes after the retrieval. The participants were randomly assigned into two groups; in one group, they were tested with the restriction of their hand movement, whereas in the other group, they were allowed to move their hands freely. Results revealed that when the movement was restricted, their performance in the retrieval task was significantly deteriorated. In Experiment 2, after the presentation of tape-recorded verbal stimuli, 26 women were required to recall them either with an interval of 2 minutes or with an interval of 2 weeks. The self-touching behavior was found to occur more often when the recall was performed with the interval of 2 weeks than when it took place immediately after the stimulus presentation. Thus self-touching is considered to serve as a cue to retrieve information stored in the long term memory.

  12. Touch, and you will gaze

    DEFF Research Database (Denmark)

    Bruun, Anders; Hahn, Claudia; Voigt, Benjamin

    2013-01-01

    This study extends previous research by exploring the quality of the interaction experienced by a group of elderly participants interacting with a healthcare portal when applying a touch screen remote control. This is compared to a standard remote control with physical buttons.......This study extends previous research by exploring the quality of the interaction experienced by a group of elderly participants interacting with a healthcare portal when applying a touch screen remote control. This is compared to a standard remote control with physical buttons....

  13. Explaining away the body: experiences of supernaturally caused touch and touch on non-hand objects within the rubber hand illusion.

    Directory of Open Access Journals (Sweden)

    Jakob Hohwy

    2010-02-01

    Full Text Available In rubber hand illusions and full body illusions, touch sensations are projected to non-body objects such as rubber hands, dolls or virtual bodies. The robustness, limits and further perceptual consequences of such illusions are not yet fully explored or understood. A number of experiments are reported that test the limits of a variant of the rubber hand illusion.A variant of the rubber hand illusion is explored, in which the real and foreign hands are aligned in personal space. The presence of the illusion is ascertained with participants' scores and temperature changes of the real arm. This generates a basic illusion of touch projected to a foreign arm. Participants are presented with further, unusual visuotactile stimuli subsequent to onset of the basic illusion. Such further visuotactile stimulation is found to generate very unusual experiences of supernatural touch and touch on a non-hand object. The finding of touch on a non-hand object conflicts with prior findings, and to resolve this conflict a further hypothesis is successfully tested: that without prior onset of the basic illusion this unusual experience does not occur.A rubber hand illusion is found that can arise when the real and the foreign arm are aligned in personal space. This illusion persists through periods of no tactile stimulation and is strong enough to allow very unusual experiences of touch felt on a cardboard box and experiences of touch produced at a distance, as if by supernatural causation. These findings suggest that one's visual body image is explained away during experience of the illusion and they may be of further importance to understanding the role of experience in delusion formation. The findings of touch on non-hand objects may help reconcile conflicting results in this area of research. In addition, new evidence is provided that relates to the recently discovered psychologically induced temperature changes that occur during the illusion.

  14. An Algorithm of Calculating the Position in a Self-Capacitance Touch Screen

    Science.gov (United States)

    Zhang, Huan; Peng, Haiyan; Qian, Xiaoli; Ren, Can; Wang, Wentao; Li, Jianjun

    Touch screens have been widely used in many kinds of electronic products. For many capacitive touch sensing devices, they always suffer from a variety of electronic signal noises. So when a finger touches the screen, it is difficult to calculate the exact touch position on the screen. We proposed an algorithm of calculating the position in a self-capacitance touch screen to alleviate noise interference. We determined the touch region by calculating the differences between current data and reference data in every channel. In the touch region we divided it into different ranges to calculate the touch point. The simulation results show that the algorithm that we proposed can alleviate noise interference effectively and obtain the exact positioning on touch screen accurately.

  15. Diagnostic values of FibroScan and FibroTouch for liver fibrosis: a comparative analysis

    Directory of Open Access Journals (Sweden)

    WU Na

    2014-07-01

    Full Text Available ObjectiveTo compare the diagnostic values of FibroScan and FibroTouch for liver fibrosis. MethodsA total of 962 patients who visited Department of Hepatology, The First Hospital of Jilin University from September 2013 to March 2014 were enrolled. FibroScan and FibroTouch were performed among these patients. Thirty-three cases underwent liver biopsy, and Aspartate aminotransferase-to-platelet ratio index (APRI was calculated in 66 patients (chronic hepatitis B (CHB: 53 cases; chronic hepatitis C (CHC: 13 cases. Spearman rank correlation test was used to analyze the correlation between the results measured by FibroScan and FibroTouch. The diagnostic values of FibroScan and FibroTouch for liver fibrosis were analyzed and compared by receiver operating characteristic (ROC curve. ResultsThe analysis of liver stiffness measured by FibroScan and FibroTouch among all patients showed that the correlation coefficient between FibroScan and FibroTouch was 0.866 (P<0.05, n=962. FibroScan and FibroTouch were significantly correlated with APRI (r=0.58 and 0.63, P<0.05, n=66 and pathological stage determined by liver biopsy (r=0.67 and 0.74, P<0.05, n=33. Among patients with CHB, for the diagnosis of APRI ≥2 (liver cirrhosis, the areas under the ROC curve (AUCs of FibroScan and FibroTouch were 0.761 vs 0.728 (P=0.61; among patients with CHC, for the diagnosis of APRI ≥1 (liver cirrhosis, the AUCs of FibroScan and FibroTouch were 0.810 vs 0.893 (P=0.38. For pathological stages ≥S1, ≥S2, ≥S3, and ≥S4, the AUCs of FibroScan and FibroTouch were 0.830 vs 0.889 (P=0.15, 0.841 vs 0.835 (P=0.90, 0.888 vs 0.920 (P=0.43, and 0.964 vs 0.979 (P=0.45, respectively. ConclusionFibroScan and FibroTouch have comparable diagnostic values for liver fibrosis. However, the number of cases undergoing liver biopsy in this study was relatively small, and investigation of more cases is needed to make further confirmation.

  16. Gold nanoparticle-pentacene memory-transistors

    OpenAIRE

    Novembre , Christophe; Guerin , David; Lmimouni , Kamal; Gamrat , Christian; Vuillaume , Dominique

    2008-01-01

    We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off sta...

  17. Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

    Science.gov (United States)

    Deen, M. Jamal; Pascal, Fabien

    2003-05-01

    For many analog integrated circuit applications, the polysilicon emitter bipolar junction transistor (PE-BJT) is still the preferred choice because of its higher operational frequency and lower noise performance characteristics compared to MOS transistors of similar active areas and at similar biasing currents. In this paper, we begin by motivating the reader with reasons why bipolar transistors are still of great interest for analog integrated circuits. This motivation includes a comparison between BJT and the MOSFET using a simple small-signal equivalent circuit to derive important parameters that can be used to compare these two technologies. An extensive review of the popular theories used to explain low frequency noise results is presented. However, in almost all instances, these theories have not been fully tested. The effects of different processing technologies and conditions on the noise performance of PE-BJTs is reviewed and a summary of some of the key technological steps and device parameters and their effects on noise is discussed. The effects of temperature and emitter geometries scaling is reviewed. It is shown that dispersion of the low frequency noise in ultra-small geometries is a serious issue since the rate of increase of the noise dispersion is faster than the noise itself as the emitter geometry is scaled to smaller values. Finally, some ideas for future research on PE-BJTs, some of which are also applicable to SiGe heteorjunction bipolar transistors and MOSFETs, are presented after the conclusions.

  18. Observation of abnormal mobility enhancement in multilayer MoS2 transistor by synergy of ultraviolet illumination and ozone plasma treatment

    Science.gov (United States)

    Guo, Junjie; Yang, Bingchu; Zheng, Zhouming; Jiang, Jie

    2017-03-01

    Mobility engineering through physical or chemical process is a fruitful approach for the atomically-layered two-dimensional electronic applications. Unfortunately, the usual process with either illumination or oxygen treatment would greatly deteriorate the mobility in two-dimensional MoS2 field-effect transistor (FET). Here, in this work, we report that the mobility can be abnormally enhanced to an order of magnitude by the synergy of ultraviolet illumination (UV) and ozone plasma treatment in multilayer MoS2 FET. This abnormal mobility enhancement is attributed to the trap passivation due to the photo-generated excess carriers during UV/ozone plasma treatment. An energy band model based on Schottky barrier modulation is proposed to understand the underlying mechanism. Raman spectra results indicate that the oxygen ions are incorporated into the surface of MoS2 (some of them are in the form of ultra-thin Mo-oxide) and can further confirm this proposed mechanism. Our results can thus provide a simple approach for mobility engineering in MoS2-based FET and can be easily expanded to other 2D electronic devices, which represents a significant step toward applications of 2D layered materials in advanced cost-effective electronics.

  19. Experiences with Interactive Multi-touch Tables

    Science.gov (United States)

    Fikkert, Wim; Hakvoort, Michiel; van der Vet, Paul; Nijholt, Anton

    Interactive multi-touch tables can be a powerful means of communication for collaborative work as well as an engaging environment for competition. Through enticing gameplay we have evaluated user experience on competitive gameplay, collaborative work and musical expression. In addition, we report on our extensive experiences with two types of interactive multi-touch tables and we introduce a software framework that abstracts from their technical differences.

  20. The Benefits of Single-Touch Screens in Intersubjective Meaning Making

    DEFF Research Database (Denmark)

    Davidsen, Jacob; Christiansen, Ellen Tove

    2013-01-01

    the possibilities for equal levels of verbal and physical participation.Additionally, these studies suggest that multi-touch technologies offer more task-oriented activities compared to single-touch screen interaction, in which discussion about turn-taking is more prevalent from the outset. In contrast, applying......What are the benefits of single-touch screens? The paper presents findings of one video extract from ten months of observation of single-touch screen interaction among 8-9 year-old children. Recent studies of collaborative learning mediated by digital touch screens and tabletops emphasize...... the Embodied Interaction Analysis, we find that the constraints of single-touch screens offer support for intersubjective meaning making in their capacity of constraining the interaction. This “grain of sand” shows how children display and construct a shared work space through embodied interaction...

  1. Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures

    Science.gov (United States)

    Shan, Junjie; Li, Jinhua; Chu, Xueying; Xu, Mingze; Jin, Fangjun; Fang, Xuan; Wei, Zhipeng; Wang, Xiaohua

    2018-06-01

    Semiconductor heterostructures based on transition metal dichalcogenides provide a broad platform to research two-dimensional nanomaterials and design atomically thin devices for fundamental and applied interests. The MoS2/WS2 heterostructure was prepared on SiO2/Si substrate by chemical vapor deposition (CVD) in our research. And the optical properties of the heterostructure was characterized by Raman and photoluminescence (PL) spectroscopy. The similar 2 orders of magnitude decrease of PL intensity in MoS2/WS2 heterostructures was tested, which is attribute to the electrical and optical modulation effects are connected with the interfacial charge transfer between MoS2 and WS2 films. Using MoS2/WS2 heterostructure as channel material of the phototransistor, we demonstrated over 50 folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The results indicate that the MoS2/WS2 films can be a promising heterostructure material to enhance the photoresponse characteristics of MoS2-based phototransistors.

  2. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup −14} to 10{sup −8} M and a detection limit below 10{sup −14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  3. Taking Your iPod touch to the Max

    CERN Document Server

    Sadun, Erica

    2010-01-01

    Unleash your iPhone and take it to the limit using secret tips and techniques from gadget hacker Erica Sadun. Fast and fun to read, Taking Your iPod touch 4 to the Max is fully updated to show you how get the most out of Apple's new OS 4. You'll find all the best undocumented tricks as well as the most efficient and enjoyable introduction to the iPhone available. Starting with an introduction to iPod touch 4 basics, you'll quickly move on to discover the iPod touch's hidden potential, like how to connect to a TV, get contract-free VOIP, and hack OS 4 so it will run apps on your iPod touch. Fro

  4. Touch design and narrative interpretation

    DEFF Research Database (Denmark)

    Zhao, Sumin; Unsworth, Len

    2016-01-01

    and the Bottle in depth, and illustrate how interactive design elements help to create an interpretative possibility of the story. We suggest that a better understanding of interactive touch design would promote more effective adult-child interactions around mobile applications....... of technology, but also a resource for meaning making. We distinguish two basic types of interactivity—intra-text and extra-text—incorporated in the touch design, and explore the different functions they perform in a broad range of picture book apps. In particular, we look at the app version of The Heart...

  5. β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

    Science.gov (United States)

    Zhou, Hong; Maize, Kerry; Qiu, Gang; Shakouri, Ali; Ye, Peide D.

    2017-08-01

    We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.

  6. Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor

    International Nuclear Information System (INIS)

    Kim, N.; Cheong, Y.; Song, W.

    2010-01-01

    We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

  7. The Power of Touch: Nonverbal Communication within Married Dyads

    Science.gov (United States)

    Smith, Joann C. Seeman; Vogel, David L.; Madon, Stephanie; Edwards, Sarah R.

    2011-01-01

    Researchers have suggested that one function of touch in mixed-sex interactions is to exert influence over another person. Yet theories offer different explanations as to when women and men will use touch as an influence strategy. The gender politics hypothesis proposes that men touch more as a way to maintain inequalities present in society. In…

  8. AGATE: Autonomous Go and Touch Exploration, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovation (AGATE, for Autonomous Go And Touch Exploration) will enable single-sol "go and touch" instrument placement from distances of up to five meters for...

  9. Feasibility of Training and Delivering Compassionate Touch in Long-Term Care.

    Science.gov (United States)

    Han, Areum; Kunik, Mark E

    2017-09-19

    Limited evidence supports the use of therapeutic touch for people with dementia (PWD). Interventions incorporating a person-centered approach to touch delivered by staff may benefit PWD and staff in long-term care settings. The Compassionate Touch ® (CT) program provides skilled human touch and a compassionate presence following a person-centered approach and touch protocol. The purpose of this study was to determine the feasibility of training and delivering CT. An online survey was sent via email to 112 staff who attended the CT coach training. Descriptive statistics and thematic analysis were used to analyze closed-and open-ended questions of the survey. Twenty-four staff members completed the survey and reported positive perspectives about the training, use of the program, and benefits for PWD and themselves. Five themes emerged, including (1) benefits for residents, (2) challenges in using CT, (3) when to use CT, (4) training staff, and (5) needed support. Preliminary findings from the present research show potential benefits of using the CT program for residents, challenges participants faced in using the program and training other staff, and support needed to overcome these challenges. Programs such as CT may benefit PWD and staff in residential care settings.

  10. Laterality of foetal self-touch in relation to maternal stress.

    Science.gov (United States)

    Reissland, Nadja; Aydin, Ezra; Francis, Brian; Exley, Kendra

    2015-01-01

    This longitudinal observational study investigated whether foetuses change their hand preference with gestational age, and also examined the effects of maternal stress on lateralized foetal self-touch. Following ethical approval, fifteen healthy foetuses (eight girls and seven boys) were scanned four times from 24 to 36 weeks gestation. Self-touch behaviours which resulted in a touch of the foetal face/head were coded in 60 scans for 10 min and analysed in terms of frequency of the foetuses using left and right hands to touch their face. The joint effects of foetal age, stress and sex on laterality were assessed. We modelled the proportion of right self-touches for each foetal scan using a generalized linear mixed model, taking account of the repeated measures design. There was substantial variability in hand preference between foetuses. However, there was no significant increase in the proportion of right-handed touches with foetal age. No sex differences in handedness were identified. However, maternally reported stress level was significantly positively related to foetal left-handed self-touches (odds ratio 0.915; p < .0001). This longitudinal study provides important new insights into the effect of recent maternal stress on foetal predominant hand use during self-touch.

  11. Effects of therapeutic touch on the vital signs of patients before coronary artery bypass graft surgery.

    Science.gov (United States)

    Zare, Zahra; Shahsavari, Hooman; Moeini, Mahin

    2010-01-01

    Currently healthy heart word considered to be the objective of community health applications in many countries of the world because cardiovascular diseases are the most important factor in mortality of humans, worldwide. Coronary artery bypass graft surgery is one of the most common surgery procedures for these patients. The purpose of this study is to assess the impact of therapeutic touch on medical vital signs of patients before coronary artery bypass graft surgery. The present study is a clinical trial with 44 samples that were selected by easy sampling method and based on two separate lists of random numbers for both men and women; they were divided into two groups. In the therapeutic touch group, intervention therapy was applied on patents for 20 minutes. Data was analyzed using descriptive and inferential statistics. Test results showed that there was a significant difference between the mean pulse rate before and after intervention in both groups (p touch therapy as a safe and effective intervention on the patients which were revealed in this study, this technique can be used as a simple, cheap and applicable technique in all health care centers to help these patients.

  12. Galaxy Tab Covers Samsung TouchWiz Interface

    CERN Document Server

    Gralla, Preston

    2011-01-01

    Galaxy Tab lets you work, play, read, and connect on the go, but mastering its TouchWiz interface and finding the best apps can be tricky-unless you have this Missing Manual. Gadget whiz Preston Gralla provides crystal-clear explanations and step-by-step instructions to get you up to speed quickly, whether you have the 3G/4G or Wi-Fi version of this amazing device. The important stuff you need to know: Design your experience. Add interactive widgets and mini-apps to your screen with TouchWiz.Satisfy your appetite. Download thousands of games and apps from the Android Market.Keep in touch. Ch

  13. Reactions, accuracy and response complexity of numerical typing on touch screens.

    Science.gov (United States)

    Lin, Cheng-Jhe; Wu, Changxu

    2013-01-01

    Touch screens are popular nowadays as seen on public kiosks, industrial control panels and personal mobile devices. Numerical typing is one frequent task performed on touch screens, but this task on touch screen is subject to human errors and slow responses. This study aims to find innate differences of touch screens from standard physical keypads in the context of numerical typing by eliminating confounding issues. Effects of precise visual feedback and urgency of numerical typing were also investigated. The results showed that touch screens were as accurate as physical keyboards, but reactions were indeed executed slowly on touch screens as signified by both pre-motor reaction time and reaction time. Provision of precise visual feedback caused more errors, and the interaction between devices and urgency was not found on reaction time. To improve usability of touch screens, designers should focus more on reducing response complexity and be cautious about the use of visual feedback. The study revealed that slower responses on touch screens involved more complex human cognition to formulate motor responses. Attention should be given to designing precise visual feedback appropriately so that distractions or visual resource competitions can be avoided to improve human performance on touch screens.

  14. Touch Attenuates Infants' Physiological Reactivity to Stress

    Science.gov (United States)

    Feldman, Ruth; Singer, Magi; Zagoory, Orna

    2010-01-01

    Animal studies demonstrate that maternal touch and contact regulate infant stress, and handling during periods of maternal deprivation attenuates the stress response. To measure the effects of touch on infant stress reactivity during simulated maternal deprivation, 53 dyads were tested in two paradigms: still-face (SF) and still-face with maternal…

  15. Cyclewise Operation of Printed MoS2 Transistor Biosensors for Rapid Biomolecule Quantification at Femtomolar Levels.

    Science.gov (United States)

    Ryu, Byunghoon; Nam, Hongsuk; Oh, Bo-Ram; Song, Yujing; Chen, Pengyu; Park, Younggeun; Wan, Wenjie; Kurabayashi, Katsuo; Liang, Xiaogan

    2017-02-24

    Field-effect transistors made from MoS 2 and other emerging layered semiconductors have been demonstrated to be able to serve as ultrasensitive biosensors. However, such nanoelectronic sensors still suffer seriously from a series of challenges associated with the poor compatibility between electronic structures and liquid analytes. These challenges hinder the practical biosensing applications that demand rapid, low-noise, highly specific biomolecule quantification at femtomolar levels. To address such challenges, we study a cyclewise process for operating MoS 2 transistor biosensors, in which a series of reagent fluids are delivered to the sensor in a time-sequenced manner and periodically set the sensor into four assay-cycle stages, including incubation, flushing, drying, and electrical measurement. Running multiple cycles of such an assay can acquire a time-dependent sensor response signal quantifying the reaction kinetics of analyte-receptor binding. This cyclewise detection approach can avoid the liquid-solution-induced electrochemical damage, screening, and nonspecific adsorption to the sensor and therefore improves the transistor sensor's durability, sensitivity, specificity, and signal-to-noise ratio. These advantages in combination with the inherent high sensitivity of MoS 2 biosensors allow for rapid biomolecule quantification at femtomolar levels. We have demonstrated the cyclewise quantification of Interleukin-1β in pure and complex solutions (e.g., serum and saliva) with a detection limit of ∼1 fM and a total detection time ∼23 min. This work leverages the superior properties of layered semiconductors for biosensing applications and advances the techniques toward realizing fast real-time immunoassay for low-abundance biomolecule detection.

  16. Transistor amplifier as an electrochemical transducer with intuitive optical read-out: Improving its performance with simple electronic solutions

    Czech Academy of Sciences Publication Activity Database

    Lacina, K.; Žák, J.; Sopoušek, J.; Szabó, Z.; Václavek, Tomáš; Žeravík, J.; Fiala, P.; Skládal, P.

    2016-01-01

    Roč. 216, OCT (2016), s. 147-151 ISSN 0013-4686 R&D Projects: GA ČR GA13-09086S; GA ČR(CZ) GBP206/12/G014 Institutional support: RVO:68081715 Keywords : electrochemical transducer transistor * operational amplifier * optical read-out * ( bio )sensing Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 4.798, year: 2016

  17. Transistor amplifier as an electrochemical transducer with intuitive optical read-out: Improving its performance with simple electronic solutions

    Czech Academy of Sciences Publication Activity Database

    Lacina, K.; Žák, J.; Sopoušek, J.; Szabó, Z.; Václavek, Tomáš; Žeravík, J.; Fiala, P.; Skládal, P.

    2016-01-01

    Roč. 216, OCT (2016), s. 147-151 ISSN 0013-4686 R&D Projects: GA ČR GA13-09086S; GA ČR(CZ) GBP206/12/G014 Institutional support: RVO:68081715 Keywords : electrochemical transducer transistor * operational amplifier * optical read-out * (bio)sensing Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 4.798, year: 2016

  18. Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid Structure.

    Science.gov (United States)

    Chen, Libo; Xue, Fei; Li, Xiaohui; Huang, Xin; Wang, Longfei; Kou, Jinzong; Wang, Zhong Lin

    2016-01-26

    Two-dimensional (2D) molybdenum disulfide (MoS2) is an exciting material due to its unique electrical, optical, and piezoelectric properties. Owing to an intrinsic band gap of 1.2-1.9 eV, monolayer or a-few-layer MoS2 is used for fabricating field effect transistors (FETs) with high electron mobility and on/off ratio. However, the traditional FETs are controlled by an externally supplied gate voltage, which may not be sensitive enough to directly interface with a mechanical stimulus for applications in electronic skin. Here we report a type of top-pressure/force-gated field effect transistors (PGFETs) based on a hybrid structure of a 2D MoS2 flake and 1D ZnO nanowire (NW) array. Once an external pressure is applied, the piezoelectric polarization charges created at the tips of ZnO NWs grown on MoS2 act as a gate voltage to tune/control the source-drain transport property in MoS2. At a 6.25 MPa applied stimulus on a packaged device, the source-drain current can be tuned for ∼25%, equivalent to the results of applying an extra -5 V back gate voltage. Another type of PGFET with a dielectric layer (Al2O3) sandwiched between MoS2 and ZnO also shows consistent results. A theoretical model is proposed to interpret the received data. This study sets the foundation for applying the 2D material-based FETs in the field of artificial intelligence.

  19. Solution-processed small molecule-polymer blend organic thin-film transistors with hole mobility greater than 5 cm 2/Vs

    KAUST Repository

    Smith, Jeremy N.; Zhang, Weimin; Sougrat, Rachid; Zhao, Kui; Li, Ruipeng; Cha, Dong Kyu; Amassian, Aram; Heeney, Martin J.; McCulloch, Iain A.; Anthopoulos, Thomas D.

    2012-01-01

    Using phase-separated organic semiconducting blends containing a small molecule, as the hole transporting material, and a conjugated amorphous polymer, as the binder material, we demonstrate solution-processed organic thin-film transistors with superior performance characteristics that include; hole mobility >5 cm 2/Vs, current on/off ratio ≥10 6 and narrow transistor parameter spread. These exceptional characteristics are attributed to the electronic properties of the binder polymer and the advantageous nanomorphology of the blend film. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Solution-processed small molecule-polymer blend organic thin-film transistors with hole mobility greater than 5 cm 2/Vs

    KAUST Repository

    Smith, Jeremy N.

    2012-04-10

    Using phase-separated organic semiconducting blends containing a small molecule, as the hole transporting material, and a conjugated amorphous polymer, as the binder material, we demonstrate solution-processed organic thin-film transistors with superior performance characteristics that include; hole mobility >5 cm 2/Vs, current on/off ratio ≥10 6 and narrow transistor parameter spread. These exceptional characteristics are attributed to the electronic properties of the binder polymer and the advantageous nanomorphology of the blend film. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Dynamics of charge carrier trapping in NO 2 sensors based on ZnO field-effect transistors

    NARCIS (Netherlands)

    Andringa, A.-M.; Vlietstra, N.; Smits, E.C.P.; Spijkman, M.-J.; Gomes, H.L.; Klootwijk, J.H.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    Nitrogen dioxide (NO 2) detection with ZnO field-effect transistors is based on charge carrier trapping. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a

  2. Children’s Learning from Touch Screens: A Dual Representation Perspective

    Science.gov (United States)

    Sheehan, Kelly J.; Uttal, David H.

    2016-01-01

    Parents and educators often expect that children will learn from touch screen devices, such as during joint e-book reading. Therefore an essential question is whether young children understand that the touch screen can be a symbolic medium – that entities represented on the touch screen can refer to entities in the real world. Research on symbolic development suggests that symbolic understanding requires that children develop dual representational abilities, meaning children need to appreciate that a symbol is an object in itself (i.e., picture of a dog) while also being a representation of something else (i.e., the real dog). Drawing on classic research on symbols and new research on children’s learning from touch screens, we offer the perspective that children’s ability to learn from the touch screen as a symbolic medium depends on the effect of interactivity on children’s developing dual representational abilities. Although previous research on dual representation suggests the interactive nature of the touch screen might make it difficult for young children to use as a symbolic medium, the unique interactive affordances may help alleviate this difficulty. More research needs to investigate how the interactivity of the touch screen affects children’s ability to connect the symbols on the screen to the real world. Given the interactive nature of the touch screen, researchers and educators should consider both the affordances of the touch screen as well as young children’s cognitive abilities when assessing whether young children can learn from it as a symbolic medium. PMID:27570516

  3. Ultra-high gain diffusion-driven organic transistor

    Science.gov (United States)

    Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

    2016-01-01

    Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal–semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics. PMID:26829567

  4. A review of sensing technologies for small and large-scale touch panels

    Science.gov (United States)

    Akhtar, Humza; Kemao, Qian; Kakarala, Ramakrishna

    2017-06-01

    A touch panel is an input device for human computer interaction. It consists of a network of sensors, a sampling circuit and a micro controller for detecting and locating a touch input. Touch input can come from either finger or stylus depending upon the type of touch technology. These touch panels provide an intuitive and collaborative workspace so that people can perform various tasks with the use of their fingers instead of traditional input devices like keyboard and mouse. Touch sensing technology is not new. At the time of this writing, various technologies are available in the market and this paper reviews the most common ones. We review traditional designs and sensing algorithms for touch technology. We also observe that due to its various strengths, capacitive touch will dominate the large-scale touch panel industry in years to come. In the end, we discuss the motivation for doing academic research on large-scale panels.

  5. Touch in primary care consultations: qualitative investigation of doctors’ and patients’ perceptions

    Science.gov (United States)

    Cocksedge, Simon; George, Bethan; Renwick, Sophie; Chew-Graham, Carolyn A

    2013-01-01

    Background Good communication skills are integral to successful doctor–patient relationships. Communication may be verbal or non-verbal, and touch is a significant component, which has received little attention in the primary care literature. Touch may be procedural (part of a clinical task) or expressive (contact unrelated to a procedure/examination). Aim To explore GPs’ and patients’ experiences of using touch in consultations. Design and setting Qualitative study in urban and semi-rural areas of north-west England. Method Participating GPs recruited registered patients with whom they felt they had an ongoing relationship. Data were collected by semi-structured interviews and subjected to constant comparative qualitative analysis. Results All participants described the importance of verbal and non-verbal communication in developing relationships. Expressive touch was suggested to improve communication quality by most GPs and all patients. GPs reported a lower threshold for using touch with older patients or those who were bereaved, and with patients of the same sex as themselves. All patient responders felt touch on the hand or forearm was appropriate. GPs described limits to using touch, with some responders rarely using anything other than procedural touch. In contrast, most patient responders believed expressive touch was acceptable, especially in situations of distress. All GP responders feared misinterpretation in their use of touch, but patients were keen that these concerns should not prevent doctors using expressive touch in consultations. Conclusion Expressive touch improves interactions between GPs and patients. Increased educational emphasis on the conscious use of expressive touch would enhance clinical communication and, hence, perhaps patient wellbeing and care. PMID:23540485

  6. Feasibility of touch-less control of operating room lights.

    Science.gov (United States)

    Hartmann, Florian; Schlaefer, Alexander

    2013-03-01

    Today's highly technical operating rooms lead to fairly complex surgical workflows where the surgeon has to interact with a number of devices, including the operating room light. Hence, ideally, the surgeon could direct the light without major disruption of his work. We studied whether a gesture tracking-based control of an automated operating room light is feasible. So far, there has been little research on control approaches for operating lights. We have implemented an exemplary setup to mimic an automated light controlled by a gesture tracking system. The setup includes a articulated arm to position the light source and an off-the-shelf RGBD camera to detect the user interaction. We assessed the tracking performance using a robot-mounted hand phantom and ran a number of tests with 18 volunteers to evaluate the potential of touch-less light control. All test persons were comfortable with using the gesture-based system and quickly learned how to move a light spot on flat surface. The hand tracking error is direction-dependent and in the range of several centimeters, with a standard deviation of less than 1 mm and up to 3.5 mm orthogonal and parallel to the finger orientation, respectively. However, the subjects had no problems following even more complex paths with a width of less than 10 cm. The average speed was 0.15 m/s, and even initially slow subjects improved over time. Gestures to initiate control can be performed in approximately 2 s. Two-thirds of the subjects considered gesture control to be simple, and a majority considered it to be rather efficient. Implementation of an automated operating room light and touch-less control using an RGBD camera for gesture tracking is feasible. The remaining tracking error does not affect smooth control, and the use of the system is intuitive even for inexperienced users.

  7. High transconductance organic electrochemical transistors

    Science.gov (United States)

    Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

    2013-07-01

    The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications.

  8. High transconductance organic electrochemical transistors

    Science.gov (United States)

    Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

    2013-01-01

    The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications. PMID:23851620

  9. A Unique Blend of 2-Fluorenyl-2-anthracene and 2-Anthryl-2-anthracence Showing White Emission and High Charge Mobility.

    Science.gov (United States)

    Chen, Mengyun; Zhao, Yang; Yan, Lijia; Yang, Shuai; Zhu, Yanan; Murtaza, Imran; He, Gufeng; Meng, Hong; Huang, Wei

    2017-01-16

    White-light-emitting materials with high mobility are necessary for organic white-light-emitting transistors, which can be used for self-driven OLED displays or OLED lighting. In this study, we combined two materials with similar structures-2-fluorenyl-2-anthracene (FlAnt) with blue emission and 2-anthryl-2-anthracence (2A) with greenish-yellow emission-to fabricate OLED devices, which showed unusual solid-state white-light emission with the CIE coordinates (0.33, 0.34) at 10 V. The similar crystal structures ensured that the OTFTs based on mixed FlAnt and 2A showed high mobility of 1.56 cm 2  V -1  s -1 . This simple method provides new insight into the design of high-performance white-emitting transistor materials and structures. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Therapeutic touch: influence on vital signs of newborns

    Science.gov (United States)

    Ramada, Nadia Christina Oliveira; Almeida, Fabiane de Amorim; Cunha, Mariana Lucas da Rocha

    2013-01-01

    ABSTRACT Objective>: To compare vital signs before and after the therapeutic touch observed in hospitalized newborns in neonatal intensive care unit. Methods: This was a quasi-experimental study performed at a neonatal intensive care unit of a municipal hospital, in the city of São Paulo (SP), Brazil. The sample included 40 newborns submitted to the therapeutic touch after a painful procedure. We evaluated the vital signs, such as heart and respiratory rates, temperature and pain intensity, before and after the therapeutic touch. Results: The majority of newborns were male (n=28; 70%), pre-term (n=19; 52%) and born from vaginal delivery (n=27; 67%). Respiratory distress was the main reason for hospital admission (n=16; 40%). There was a drop in all vital signs after therapeutic touch, particularly in pain score, which had a considerable reduction in the mean values, from 3.37 (SD=1.31) to 0 (SD=0.0). All differences found were statistically significant by the Wilcoxon test (p<0.05). Conclusion: The results showed that therapeutic touch promotes relaxation of the baby, favoring reduction in vital signs and, consequently in the basal metabolism rate. PMID:24488378

  11. Light and heavy touch reduces postural sway and modifies axial tone in Parkinson’s disease

    Science.gov (United States)

    Franzén, Erika; Paquette, Caroline; Gurfinkel, Victor; Horak, Fay

    2014-01-01

    Background Light touch with a stable object reduces postural sway by increasing axial postural tone in healthy subjects. However, it is unknown whether subjects with Parkinson’s disease (PD), who have more postural sway and higher axial postural tone than healthy subjects, can benefit from haptic touch. Objective To investigate the effect of light and heavy touch on postural stability and hip tone in subjects with PD. Methods Fourteen subjects with mid-stage PD, and 14 healthy control subjects were evaluated during quiet standing with eyes closed with their arms: 1) crossed, 2) lightly touching a fixed rigid bar in front of them and 3) firmly gripping the bar. Postural sway was measured with a forceplate and axial hip tone was quantified using a unique device that measures the resistance of the hips to yaw rotation while maintaining active stance. Results Subjects with PD significantly decreased their postural sway with light or heavy touch (ptouch, hip tone was larger in PD subjects. With touch, however, tone values were similar in both groups. This change in hip tone with touch was highly correlated with the initial amount of tone (PD: r=− 0.72 to −0.95 and controls: r=−0.74 to−0.85). Conclusions We showed, for the first time, that subjects with PD benefit from touch similarly to control subjects and that despite higher axial postural tone, PD subjects are able to modulate their tone with touch. Future studies should investigate the complex relationship between touch and postural tone. PMID:22415944

  12. Dielectric strength of SiO2 in a CMOS transistor structure

    International Nuclear Information System (INIS)

    Soden, J.M.

    1979-01-01

    The distribution of experimental dielectric strengths of SiO 2 gate dielectric in a CMOS transistor structure is shown to be composed of a primary, statistically-normal distribution of high dielectric strength and a secondary distribution spread through the lower dielectric strength region. The dielectric strength was not significantly affected by high level (1 x 10 6 RADS (Si)) gamma radiation or high temperature (200 0 C) stress. The primary distribution breakdowns occurred at topographical edges, mainly at the gate/field oxide interface, and the secondary distribution breakdowns occurred at random locations in the central region of the gate

  13. Recent progress in photoactive organic field-effect transistors.

    Science.gov (United States)

    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

    2014-04-01

    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

  14. Recent progress in photoactive organic field-effect transistors

    International Nuclear Information System (INIS)

    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

    2014-01-01

    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts. (review)

  15. Advances in NO2 sensing with individual single-walled carbon nanotube transistors.

    Science.gov (United States)

    Chikkadi, Kiran; Muoth, Matthias; Roman, Cosmin; Haluska, Miroslav; Hierold, Christofer

    2014-01-01

    The charge carrier transport in carbon nanotubes is highly sensitive to certain molecules attached to their surface. This property has generated interest for their application in sensing gases, chemicals and biomolecules. With over a decade of research, a clearer picture of the interactions between the carbon nanotube and its surroundings has been achieved. In this review, we intend to summarize the current knowledge on this topic, focusing not only on the effect of adsorbates but also the effect of dielectric charge traps on the electrical transport in single-walled carbon nanotube transistors that are to be used in sensing applications. Recently, contact-passivated, open-channel individual single-walled carbon nanotube field-effect transistors have been shown to be operational at room temperature with ultra-low power consumption. Sensor recovery within minutes through UV illumination or self-heating has been shown. Improvements in fabrication processes aimed at reducing the impact of charge traps have reduced the hysteresis, drift and low-frequency noise in carbon nanotube transistors. While open challenges such as large-scale fabrication, selectivity tuning and noise reduction still remain, these results demonstrate considerable progress in transforming the promise of carbon nanotube properties into functional ultra-low power, highly sensitive gas sensors.

  16. Programmable automated transistor test system

    International Nuclear Information System (INIS)

    Truong, L.V.; Sundberg, G.R.

    1986-01-01

    The paper describes a programmable automated transistor test system (PATTS) and its utilization to evaluate bipolar transistors and Darlingtons, and such MOSFET and special types as can be accommodated with the PATTS base-drive. An application of a pulsed power technique at low duty cycles in a non-destructive test is used to examine the dynamic switching characteristic curves of power transistors. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software. In addition a library of test data is established on disks, tapes, and hard copies for future reference

  17. Biosensor properties of SOI nanowire transistors with a PEALD Al{sub 2}O{sub 3} dielectric protective layer

    Energy Technology Data Exchange (ETDEWEB)

    Popov, V. P., E-mail: popov@isp.nsc.ru; Ilnitskii, M. A.; Zhanaev, E. D. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Myakon’kich, A. V.; Rudenko, K. V. [Russian Academy of Sciences, Physical Technological Institute (Russian Federation); Glukhov, A. V. [Novosibirsk Semiconductor Device Plant and Design Bureau (Russian Federation)

    2016-05-15

    The properties of protective dielectric layers of aluminum oxide Al{sub 2}O{sub 3} applied to prefabricated silicon-nanowire transistor biochips by the plasma enhanced atomic layer deposition (PEALD) method before being housed are studied depending on the deposition and annealing modes. Coating the natural silicon oxide with a nanometer Al{sub 2}O{sub 3} layer insignificantly decreases the femtomole sensitivity of biosensors, but provides their stability in bioliquids. In deionized water, transistors with annealed aluminum oxide are closed due to the trapping of negative charges of <(1–10) × 10{sup 11} cm{sup −2} at surface states. The application of a positive potential to the substrate (V{sub sub} > 25 V) makes it possible to eliminate the negative charge and to perform multiple measurements in liquid at least for half a year.

  18. Temperature-touch interaction: Weber's phenomenon revisited.

    Science.gov (United States)

    Stevens, J C; Green, B G

    1978-09-01

    The six experiments reported here stemmed from Weber's (E. H. Weber, In R. Wagner (Ed.), Handwnörterbuch der Physiologie, 1846. Vol. 3, pp. 481-588) report that cold objects on the forehead feel heavier than warm ones, implying an effect of temperature on the touch modality. The experiments arrived at first-order answers to how temperature, force of stimulation, areal size of stimulation, and body locus might influence the magnitude of touch sensation. Typically, concomitant cooling greatly intensifies touch magnitude as perceived via the forehead and the forearm. Warning has little or no effect via the forehead but gives a significant intensification (less pronounced than that of cooling) on the forearm. When the areal size of the stimulation becomes very small, the intensification effects cannot be reliably demonstrated. The findings are reviewed in the light of what is known about the physiology of the cutaneous nerves.

  19. Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

    Science.gov (United States)

    Cao, Xuan; Cao, Yu; Zhou, Chongwu

    2016-01-26

    Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.

  20. Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.

    Science.gov (United States)

    Heo, Jae Sang; Kim, Taehoon; Ban, Seok-Gyu; Kim, Daesik; Lee, Jun Ho; Jur, Jesse S; Kim, Myung-Gil; Kim, Yong-Hoon; Hong, Yongtaek; Park, Sung Kyu

    2017-08-01

    The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm 2 V -1 s -1 , respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Helping Hands: Designing Video Games with Interpersonal Touch Interaction

    OpenAIRE

    Watts , Cody; Sharlin , Ehud; Woytiuk , Peter

    2010-01-01

    International audience; Increasingly, the movements of players' physical bodies are being used as a method of controlling and playing video games. This trend is evidenced by the recent development of interpersonal touch-based games; multiplayer games which players control by physically touching their partners. Although a small number of interpersonal touch-based games have recently been designed, the best practices for creating video games based on this unconventional interaction technique re...

  2. Trajectory Design Considerations for Small Body Touch-and-Go

    Science.gov (United States)

    Wallace, Mark; Broschart, Stephen; Bonfiglio, Eugene; Bhaskharan, Shyam; Cangahuala, Alberto

    2011-01-01

    Outline: (1) Trajectory Description (2) Design Drivers: (2a) Dynamics (2b) Environment (2c) Spacecraft and Ground and System Capabilities (2d) Mission Objectives (3) Design Choices (4) Historical Precedents (5) Case Studies. What is Touch-and-Go (TAG)? (1) Descent to the surface (2) Brief contact (3) Ascends to a safe distance

  3. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

    International Nuclear Information System (INIS)

    Yurchuk, Ekaterina

    2015-01-01

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  4. Hybrid light emitting transistors (Presentation Recording)

    Science.gov (United States)

    Muhieddine, Khalid; Ullah, Mujeeb; Namdas, Ebinazar B.; Burn, Paul L.

    2015-10-01

    Organic light-emitting diodes (OLEDs) are well studied and established in current display applications. Light-emitting transistors (LETs) have been developed to further simplify the necessary circuitry for these applications, combining the switching capabilities of a transistor with the light emitting capabilities of an OLED. Such devices have been studied using mono- and bilayer geometries and a variety of polymers [1], small organic molecules [2] and single crystals [3] within the active layers. Current devices can often suffer from low carrier mobilities and most operate in p-type mode due to a lack of suitable n-type organic charge carrier materials. Hybrid light-emitting transistors (HLETs) are a logical step to improve device performance by harnessing the charge carrier capabilities of inorganic semiconductors [4]. We present state of the art, all solution processed hybrid light-emitting transistors using a non-planar contact geometry [1, 5]. We will discuss HLETs comprised of an inorganic electron transport layer prepared from a sol-gel of zinc tin oxide and several organic emissive materials. The mobility of the devices is found between 1-5 cm2/Vs and they had on/off ratios of ~105. Combined with optical brightness and efficiencies of the order of 103 cd/m2 and 10-3-10-1 %, respectively, these devices are moving towards the performance required for application in displays. [1] M. Ullah, K. Tandy, S. D. Yambem, M. Aljada, P. L. Burn, P. Meredith, E. B. Namdas., Adv. Mater. 2013, 25, 53, 6213 [2] R. Capelli, S. Toffanin, G. Generali, H. Usta, A. Facchetti, M. Muccini, Nature Materials 2010, 9, 496 [3] T. Takenobu, S. Z. Bisri, T. Takahashi, M. Yahiro, C. Adachi, Y. Iwasa, Phys. Rev. Lett. 2008, 100, 066601 [4] H. Nakanotani, M. Yahiro, C. Adachi, K. Yano, Appl. Phys. Lett. 2007, 90, 262104 [5] K. Muhieddine, M. Ullah, B. N. Pal, P. Burn E. B. Namdas, Adv. Mater. 2014, 26,37, 6410

  5. The brain’s response to pleasant touch: an EEG investigation of tactile caressing

    Directory of Open Access Journals (Sweden)

    Harsimrat eSingh

    2014-11-01

    Full Text Available Somatosensation as a proximal sense can have a strong impact on our attitude towards physical objects and other human beings. However, relatively little is known about how hedonic valence of touch is processed at the cortical level. Here we investigated the electrophysiological correlates of affective tactile sensation during caressing of the right forearm with pleasant and unpleasant textile fabrics. We show dissociation between more physically driven differential brain responses to the different fabrics in early somatosensory cortex – the well-known mu-suppression (10-20 Hz - and a beta-band response (25-30 Hz in presumably higher-order somatosensory areas in the right-hemisphere that correlated well with the subjective valence of tactile caressing. Importantly, when using single trial classification techniques, beta-power significantly distinguished between pleasant and unpleasant stimulation on a single trial basis with high accuracy. Our results therefore suggest a dissociation of the sensory and affective aspects of touch in the somatosensory system and may provide features that may be used for single trial decoding of affective mental states from simple electroencephalographic measurements.

  6. Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors.

    Science.gov (United States)

    Bu, Laju; Hu, Mengxing; Lu, Wanlong; Wang, Ziyu; Lu, Guanghao

    2018-01-01

    Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid cross-talk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO 2 dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor-insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm 2 V -1 s -1 with an on/off ratio > 10 7 is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnO_x–Al_2O_3 thin film structure

    International Nuclear Information System (INIS)

    Li, H. K.; Chen, T. P.; Liu, P.; Zhang, Q.; Hu, S. G.; Liu, Y.; Lee, P. S.

    2016-01-01

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al_2O_3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al_2O_3 interface and/or in the Al_2O_3 layer.

  8. Pulse GaAs field transistor amplifier with subnanosecond time transient

    International Nuclear Information System (INIS)

    Sidnev, A.N.

    1987-01-01

    Pulse amplifier on fast field effect GaAs transistors with Schottky barrier is described. The amplifier contains four cascades, the first three of which are made on combined transistors on the common-drain circuit. The last cascade is made on high-power field effect GaAs transistor for coordination with 50 ohm load. The amplifier operates within the range of input signals from 0.5 up to 100 mV with repetition frequency up to 16 Hz, The gain of the amplifier is ≅ 20 dB. The setting time at output pulses amplitude up to 1 V constitutes ∼ 0.2 ns

  9. Universal power transistor base drive control unit

    Science.gov (United States)

    Gale, Allan R.; Gritter, David J.

    1988-01-01

    A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

  10. Investigations on field-effect transistors based on two-dimensional materials

    Energy Technology Data Exchange (ETDEWEB)

    Finge, T.; Riederer, F.; Grap, T.; Knoch, J. [Institute of Semiconductor Electronics, RWTH Aachen University (Germany); Mueller, M.R. [Institute of Semiconductor Electronics, RWTH Aachen University (Germany); Infineon Technologies, Villach (Austria); Kallis, K. [Intelligent Microsystems Chair, TU Dortmund University (Germany)

    2017-11-15

    In the present article, experimental and theoretical investigations regarding field-effect transistors based on two-dimensional (2D) materials are presented. First, the properties of contacts between a metal and 2D material are discussed. To this end, metal-to-graphene contacts as well to transition metal dichalcogenides (TMD) are studied. Whereas metal-graphene contacts can be tuned with an appropriate back-gate, metal-TMD contacts exhibit strong Fermi level pinning showing substantially limited maximum possible drive current. Next, tungsten diselenide (WSe{sub 2}) field-effect transistors are presented. Employing buried-triple-gate substrates allows tuning source, channel and drain by applying appropriate gate voltages so that the device can be reconfigured to work as n-type, p-type and as so-called band-to-band tunnel field-effect transistor on the same WSe{sub 2} flake. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Millimeter-wave small-signal modeling with optimizing sensitive-parameters for metamorphic high electron mobility transistors

    International Nuclear Information System (INIS)

    Moon, S-W; Baek, Y-H; Han, M; Rhee, J-K; Kim, S-D; Oh, J-H

    2010-01-01

    In this paper, we present a simple and reliable technique for determining the small-signal equivalent circuit model parameters of the 0.1 µm metamorphic high electron mobility transistors (MHEMTs) in a millimeter-wave frequency range. The initial eight extrinsic parameters of the MHEMT are extracted using two S-parameter (scattering parameter) sets measured under the pinched-off and zero-biased cold field-effect transistor conditions by avoiding the forward gate biasing. Furthermore, highly calibration-sensitive values of the R s , L s and C pd are optimized by using a gradient optimization method to improve the modeling accuracy. The accuracy enhancement of this procedure is successfully verified with an excellent correlation between the measured and calculated S-parameters up to 65 GHz

  12. Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

    Science.gov (United States)

    Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

    2018-01-01

    An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

  13. Junctionless Cooper pair transistor

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, K. Yu., E-mail: konstantin.yu.arutyunov@jyu.fi [National Research University Higher School of Economics , Moscow Institute of Electronics and Mathematics, 101000 Moscow (Russian Federation); P.L. Kapitza Institute for Physical Problems RAS , Moscow 119334 (Russian Federation); Lehtinen, J.S. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, FI-02044 VTT (Finland)

    2017-02-15

    Highlights: • Junctionless Cooper pair box. • Quantum phase slips. • Coulomb blockade and gate modulation of the Coulomb gap. - Abstract: Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by ±2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a superconducting single electron transistor (Cooper pair transistor) without any tunnel junctions. Instead a pair of thin superconducting titanium wires in QPS regime was used. The current–voltage characteristics demonstrate the clear Coulomb blockade with magnitude of the Coulomb gap modulated by the gate potential. The Coulomb blockade disappears above the critical temperature, and at low temperatures can be suppressed by strong magnetic field.

  14. Substrate-free ultra-flexible organic field-effect transistors and five-stage ring oscillators.

    Science.gov (United States)

    Zhang, Lei; Wang, Hanlin; Zhao, Yan; Guo, Yunlong; Hu, Wenping; Yu, Gui; Liu, Yunqi

    2013-10-11

    Freestanding, substrate-free organic field-effect transistors and organic circuits with a nominal thickness of 320 nm are demonstrated by using a simple water-floatation method. The devices work well in freestanding status, attached on banknotes, or bent over the blade of a knife. The ultralight devices with extreme bending stability indicate a bright future for organic electronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. The replacement of touch-terminal consoles of the CERN antiproton accumulator complex (AAC) by office PC's as well as X-windows based workstations

    International Nuclear Information System (INIS)

    Chohan, V.; Deloose, I.; Shering, G.

    1992-01-01

    With aging hardware and expensive maintenance and replacement possibilities, it was decided to upgrade the AAC touch terminal consoles with modern hardware. With significant amount of operational application software developed with touch terminals over 10 years, the philosophy adopted was to attempt a total emulation of these console functions of touch actions, graphics display as well as simple keyboard terminal entry onto the front-end computer controlling the AAC. The PC based emulation by mouse and multiple windows under MS-DOS and later, under the Windows 3 environment was realized relatively quickly; the next stage was therefore to do the same on the Unix platform using software based on X-windows. The communications channel was established using the TCP/IP socket library. This paper reviews this work up to the operational implementation for routine control room usage for both these solutions. (author)

  16. Encoding of Touch Intensity But Not Pleasantness in Human Primary Somatosensory Cortex

    Science.gov (United States)

    Laubacher, Claire M.; Olausson, Håkan; Wang, Binquan; Spagnolo, Primavera A.; Bushnell, M. Catherine

    2016-01-01

    Growing interest in affective touch has delineated a neural network that bypasses primary somatosensory cortex (S1). Several recent studies, however, have cast doubt on the segregation of touch discrimination and affect, suggesting that S1 also encodes affective qualities. We used functional magnetic resonance imaging (fMRI) and repetitive transcranial magnetic stimulation (rTMS) to examine the role of S1 in processing touch intensity and pleasantness. Twenty-six healthy human adults rated brushing on the hand during fMRI. Intensity ratings significantly predicted activation in S1, whereas pleasantness ratings predicted activation only in the anterior cingulate cortex. Nineteen subjects also received inhibitory rTMS over right hemisphere S1 and the vertex (control). After S1 rTMS, but not after vertex rTMS, sensory discrimination was reduced and subjects with reduced sensory discrimination rated touch as more intense. In contrast, rTMS did not alter ratings of touch pleasantness. Our findings support divergent neural processing of touch intensity and pleasantness, with affective touch encoded outside of S1. SIGNIFICANCE STATEMENT Growing interest in affective touch has identified a neural network that bypasses primary somatosensory cortex (S1). Several recent studies, however, cast doubt on the separation of touch discrimination and affect. We used functional magnetic resonance imaging and repetitive transcranial magnetic stimulation to demonstrate the representation of touch discrimination and intensity in S1, but the representation of pleasantness in the anterior cingulate cortex, not S1. Our findings support divergent neural processing of touch intensity and pleasantness, with affective touch encoded outside of S1. Our study contributes to growing delineation of the affective touch system, a crucial step in understanding its dysregulation in numerous clinical conditions such as autism, eating disorders, depression, and chronic pain. PMID:27225773

  17. Total dose induced latch in short channel NMOS/SOI transistors

    International Nuclear Information System (INIS)

    Ferlet-Cavrois, V.; Quoizola, S.; Musseau, O.; Flament, O.; Leray, J.L.; Pelloie, J.L.; Raynaud, C.; Faynot, O.

    1998-01-01

    A latch effect induced by total dose irradiation is observed in short channel SOI transistors. This effect appears on NMOS transistors with either a fully or a partially depleted structure. It is characterized by a hysteresis behavior of the Id-Vg characteristics at high drain bias for a given critical dose. Above this dose, the authors still observe a limited leakage current at low drain bias (0.1 V), but a high conduction current at high drain bias (2 V) as the transistor should be in the off-state. The critical dose above which the latch appears strongly depends on gate length, transistor structure (fully or partially depleted), buried oxide thickness and supply voltage. Two-dimensional (2D) numerical simulations indicate that the parasitic condition is due to the latch of the back gate transistor triggered by charge trapping in the buried oxide. To avoid the latch induced by the floating body effect, different techniques can be used: doping engineering, body contacts, etc. The study of the main parameters influencing the latch (gate length, supply voltage) shows that the scaling of technologies does not necessarily imply an increased latch sensitivity. Some technological parameters like the buried oxide hardness and thickness can be used to avoid latch, even at high cumulated dose, on highly integrated SOI technologies

  18. A built-in current sensor using thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Hatzopoulos, A A [Department of Electrical and Computer Eng., Electronics Lab., Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Siskos, S [Department of Physics, Electronics Lab., Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Dimitriadis, C A [Department of Physics, Microelectronic device characterization and design Lab., Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Papadopoulos, N [Department of Electrical and Computer Eng., Electronics Lab., Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Pappas, I [Department of Physics, Electronics Lab., Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Nalpantidis, L [Department of Physics, Electronics Lab., Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

    2005-01-01

    A simple current mirror using TFTs with input terminals which are capacitively coupled to the TFT gate, is used in this work, to design a built-in current sensor (BICS). The important feature in this application is that the voltage drop across the sensing TFT device can be reduced to almost zero value, while preserving transistor operation in the saturation region. This makes the proposed BICS appropriate for TFT applications without affecting the circuit operation. It also results in adequate linearity for the current monitoring, making the structure applicable to digital as well as to analog and mixed-signal circuit testing.

  19. Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates

    Institute of Scientific and Technical Information of China (English)

    潘洪亮; 金智; 麻芃; 郭建楠; 刘新宇; 叶甜春; 李佳; 敦少博; 冯志红

    2011-01-01

    Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al2O3 as the top-gate dielectric.The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate.The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found.For the intrinsic characteristic of this particular channel material,the devices cannot be switched off.The cut-off frequencies of these graphene field-effect transistors,which have a gate length of l μm,are larger than 800 MHz.The largest one can reach 1.24 GHz.There are greater than 95% active devices that can be successfully applied.We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors,which paves the way for high-performance graphene devices and circuits.%Wafer-scale graphene Beld-effect transistors are fabricated using benzocyclobutene and atomic layer deposition AI2O3 as the top-gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of l μm, are larger than 800MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene Geld-effect transistors, which paves the way for high-performance graphene devices and circuits.

  20. Touch sensitive electrorheological fluid based tactile display

    Science.gov (United States)

    Liu, Yanju; Davidson, Rob; Taylor, Paul

    2005-12-01

    A tactile display is programmable device whose controlled surface is intended to be investigated by human touch. It has a great number of potential applications in the field of virtual reality and elsewhere. In this research, a 5 × 5 tactile display array including electrorheological (ER) fluid has been developed and investigated. Force responses of the tactile display array have been measured while a probe was moved across the upper surface. The purpose of this was to simulate the action of touch performed by human finger. Experimental results show that the sensed surface information could be controlled effectively by adjusting the voltage activation pattern imposed on the tactels. The performance of the tactile display is durable and repeatable. The touch sensitivity of this ER fluid based tactile display array has also been investigated in this research. The results show that it is possible to sense the touching force normal to the display's surface by monitoring the change of current passing through the ER fluid. These encouraging results are helpful for constructing a new type of tactile display based on ER fluid which can act as both sensor and actuator at the same time.

  1. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  2. Collector modulation in high-voltage bipolar transistor in the saturation mode: Analytical approach

    Science.gov (United States)

    Dmitriev, A. P.; Gert, A. V.; Levinshtein, M. E.; Yuferev, V. S.

    2018-04-01

    A simple analytical model is developed, capable of replacing the numerical solution of a system of nonlinear partial differential equations by solving a simple algebraic equation when analyzing the collector resistance modulation of a bipolar transistor in the saturation mode. In this approach, the leakage of the base current into the emitter and the recombination of non-equilibrium carriers in the base are taken into account. The data obtained are in good agreement with the results of numerical calculations and make it possible to describe both the motion of the front of the minority carriers and the steady state distribution of minority carriers across the collector in the saturation mode.

  3. Polymer-electrolyte-gated nanowire synaptic transistors for neuromorphic applications

    Science.gov (United States)

    Zou, Can; Sun, Jia; Gou, Guangyang; Kong, Ling-An; Qian, Chuan; Dai, Guozhang; Yang, Junliang; Guo, Guang-hua

    2017-09-01

    Polymer-electrolytes are formed by dissolving a salt in polymer instead of water, the conducting mechanism involves the segmental motion-assisted diffusion of ion in the polymer matrix. Here, we report on the fabrication of tin oxide (SnO2) nanowire synaptic transistors using polymer-electrolyte gating. A thin layer of poly(ethylene oxide) and lithium perchlorate (PEO/LiClO4) was deposited on top of the devices, which was used to boost device performances. A voltage spike applied on the in-plane gate attracts ions toward the polymer-electrolyte/SnO2 nanowire interface and the ions are gradually returned after the pulse is removed, which can induce a dynamic excitatory postsynaptic current in the nanowire channel. The SnO2 synaptic transistors exhibit the behavior of short-term plasticity like the paired-pulse facilitation and self-adaptation, which is related to the electric double-effect regulation. In addition, the synaptic logic functions and the logical function transformation are also discussed. Such single SnO2 nanowire-based synaptic transistors are of great importance for future neuromorphic devices.

  4. Neutrosophic Correlation and Simple Linear Regression

    Directory of Open Access Journals (Sweden)

    A. A. Salama

    2014-09-01

    Full Text Available Since the world is full of indeterminacy, the neutrosophics found their place into contemporary research. The fundamental concepts of neutrosophic set, introduced by Smarandache. Recently, Salama et al., introduced the concept of correlation coefficient of neutrosophic data. In this paper, we introduce and study the concepts of correlation and correlation coefficient of neutrosophic data in probability spaces and study some of their properties. Also, we introduce and study the neutrosophic simple linear regression model. Possible applications to data processing are touched upon.

  5. Reach out and touch somebody's virtual hand : Affectively connected through mediated touch

    NARCIS (Netherlands)

    Toet, A.; Erp, J.B.F. van; Petrignani, F.F.; Dufrasnes, M.H.; Sahhashivan, A.

    2013-01-01

    We present the design of a haptic computer accessory that adds the experience of touch to online conversations. It enables dyads to exchange the physical experience of holding hands regardless of distance and location. Text, speech and video communication systems support the transmission of several

  6. Parental Reports on Touch Screen Use in Early Childhood.

    Directory of Open Access Journals (Sweden)

    Alejandrina Cristia

    Full Text Available Touch screens are increasingly prevalent, and anecdotal evidence suggests that young children are very drawn towards them. Yet there is little data regarding how young children use them. A brief online questionnaire queried over 450 French parents of infants between the ages of 5 and 40 months on their young child's use of touch-screen technology. Parents estimated frequency of use, and further completed several checklists. Results suggest that, among respondent families, the use of touch screens is widespread in early childhood, meaning that most children have some exposure to touch screens. Among child users, certain activities are more frequently reported to be liked than others, findings that we discuss in light of current concern for children's employment of time and the cognitive effects of passive media exposure. Additionally, these parental reports point to clear developmental trends for certain types of interactive gestures. These results contribute to the investigation of touch screen use on early development and suggest a number of considerations that should help improve the design of applications geared towards toddlers, particularly for scientific purposes.

  7. Parental Reports on Touch Screen Use in Early Childhood.

    Science.gov (United States)

    Cristia, Alejandrina; Seidl, Amanda

    2015-01-01

    Touch screens are increasingly prevalent, and anecdotal evidence suggests that young children are very drawn towards them. Yet there is little data regarding how young children use them. A brief online questionnaire queried over 450 French parents of infants between the ages of 5 and 40 months on their young child's use of touch-screen technology. Parents estimated frequency of use, and further completed several checklists. Results suggest that, among respondent families, the use of touch screens is widespread in early childhood, meaning that most children have some exposure to touch screens. Among child users, certain activities are more frequently reported to be liked than others, findings that we discuss in light of current concern for children's employment of time and the cognitive effects of passive media exposure. Additionally, these parental reports point to clear developmental trends for certain types of interactive gestures. These results contribute to the investigation of touch screen use on early development and suggest a number of considerations that should help improve the design of applications geared towards toddlers, particularly for scientific purposes.

  8. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

    International Nuclear Information System (INIS)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-01-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

  9. Planar-Processed Polymer Transistors.

    Science.gov (United States)

    Xu, Yong; Sun, Huabin; Shin, Eul-Yong; Lin, Yen-Fu; Li, Wenwu; Noh, Yong-Young

    2016-10-01

    Planar-processed polymer transistors are proposed where the effective charge injection and the split unipolar charge transport are all on the top surface of the polymer film, showing ideal device characteristics with unparalleled performance. This technique provides a great solution to the problem of fabrication limitations, the ambiguous operating principle, and the performance improvements in practical applications of conjugated-polymer transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Graphene-based flexible and stretchable thin film transistors.

    Science.gov (United States)

    Yan, Chao; Cho, Jeong Ho; Ahn, Jong-Hyun

    2012-08-21

    Graphene has been attracting wide attention owing to its superb electronic, thermal and mechanical properties. These properties allow great applications in the next generation of optoelectronics, where flexibility and stretchability are essential. In this context, the recent development of graphene growth/transfer and its applications in field-effect transistors are involved. In particular, we provide a detailed review on the state-of-the-art of graphene-based flexible and stretchable thin film transistors. We address the principles of fabricating high-speed graphene analog transistors and the key issues of producing an array of graphene-based transistors on flexible and stretchable substrates. It provides a platform for future work to focus on understanding and realizing high-performance graphene-based transistors.

  11. The Bipolar Field-Effect Transistor: XIII. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

    International Nuclear Information System (INIS)

    Sah, C.-T.; Jie Binbin

    2009-01-01

    This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its one-transistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These examples include the one-MOS-gate on semi-infinite thick impure base transistor (the bulk transistor) and the impurethin-base Silicon-on-Insulator (SOI) transistor and the two-MOS-gates on thin base transistors (the FinFET and the Thin Film Transistor TFT). Figures are given with the cross-section views containing the electron and hole concentration and current density distributions and trajectories and the corresponding DC current-voltage characteristics.

  12. Improving clinical outcomes in psychiatric care with touch-screen technology.

    Science.gov (United States)

    Newnham, Elizabeth A; Doyle, Emma L; Sng, Adelln A H; Hooke, Geoffrey R; Page, Andrew C

    2012-05-01

    Patient-focused research, which uses clinical characteristics to predict outcomes, is a field in which information technology has been effectively integrated with practice. The present research used touch-screen technology to monitor the daily self-report measures of 1,308 consecutive inpatients and day patients participating in a 2-week cognitive-behavioral therapy group. Providing regular feedback was effective in reducing symptoms for patients at risk of poor outcomes (Newnham, Hooke, & Page, 2010b). The use of touch screens in psychiatric monitoring encourages a collaborative dialogue between patients and therapists and promotes engagement in the process of progress monitoring and treatment evaluation.

  13. High Stability Pentacene Transistors Using Polymeric Dielectric Surface Modifier.

    Science.gov (United States)

    Wang, Xiaohong; Lin, Guangqing; Li, Peng; Lv, Guoqiang; Qiu, Longzhen; Ding, Yunsheng

    2015-08-01

    1,6-bis(trichlorosilyl)hexane (C6Cl), polystyrene (PS), and cross-linked polystyrene (CPS) were investigated as gate dielectric modified layers for high performance organic transistors. The influence of the surface energy, roughness and morphology on the charge transport of the organic thin-film transistors (OTFTs) was investigated. The surface energy and roughness both affect the grain size of the pentacene films which will control the charge carrier mobility of the devices. Pentacene thin-film transistors fabricated on the CPS modified dielectric layers exhibited charge carrier mobility as high as 1.11 cm2 V-1 s-1. The bias stress stability for the CPS devices shows that the drain current only decays 1% after 1530 s and the mobility never decreases until 13530 s.

  14. Oxygen effect on the electrical characteristics of pentacene transistors

    International Nuclear Information System (INIS)

    Hu Yan; Dong Guifang; Hu Yuanchuan; Wang Liduo; Qiu Yong

    2006-01-01

    The effect of oxygen on the electrical characteristics of organic thin film transistors with pentacene as the active layer has been investigated. The saturation currents and mobilities of the transistors increase as the ambient oxygen concentration decreases, which is ascribed to the formation of a charge transfer complex between pentacene and O 2 . The deposition rate of the pentacene layer affects this phenomenon. The transistor with the pentacene layer deposited at a rate of 15 nm min -1 shows higher sensitivity to oxygen concentration than the device with the pentacene layer deposited at 30 nm min -1 . We suggest that when deposited at a lower rate the pentacene film is less compact, leading to easier entrance of oxygen into the charge accumulation region

  15. Bottom-Up Tri-gate Transistors and Submicrosecond Photodetectors from Guided CdS Nanowalls.

    Science.gov (United States)

    Xu, Jinyou; Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

    2017-11-08

    Tri-gate transistors offer better performance than planar transistors by exerting additional gate control over a channel from two lateral sides of semiconductor nanowalls (or "fins"). Here we report the bottom-up assembly of aligned CdS nanowalls by a simultaneous combination of horizontal catalytic vapor-liquid-solid growth and vertical facet-selective noncatalytic vapor-solid growth and their parallel integration into tri-gate transistors and photodetectors at wafer scale (cm 2 ) without postgrowth transfer or alignment steps. These tri-gate transistors act as enhancement-mode transistors with an on/off current ratio on the order of 10 8 , 4 orders of magnitude higher than the best results ever reported for planar enhancement-mode CdS transistors. The response time of the photodetector is reduced to the submicrosecond level, 1 order of magnitude shorter than the best results ever reported for photodetectors made of bottom-up semiconductor nanostructures. Guided semiconductor nanowalls open new opportunities for high-performance 3D nanodevices assembled from the bottom up.

  16. SnO2Nanowire Arrays and Electrical Properties Synthesized by Fast Heating a Mixture of SnO2and CNTs Waste Soot

    Directory of Open Access Journals (Sweden)

    Zhou Zhi-Hua

    2009-01-01

    Full Text Available Abstract SnO2nanowire arrays were synthesized by fast heating a mixture of SnO2and the carbon nanotubes waste soot by high-frequency induction heating. The resultant SnO2nanowires possess diameters from 50 to 100 nm and lengths up to tens of mircrometers. The field-effect transistors based on single SnO2nanowire exhibit that as-synthesized nanowires have better transistor performance in terms of transconductance and on/off ratio. This work demonstrates a simple technique to the growth of nanomaterials for application in future nanoelectronic devices.

  17. POINT-OF-PURCHASE SIGNS, IMPULSE PURCHASES, AND INDIVIDUAL DIFFERENCES IN THE "DESIRE TO TOUCH"

    OpenAIRE

    Peck, Joann; Childers, Terry

    2000-01-01

    What is the role of touch in consumer behavior? Consumers are especially motivated to touch some products before buying them, and for some people, those high in "desire to touch", touching before buying is especially important. In addition, some situations encourage consumers to touch goods before purchasing them. How do these relate to impulse purchases? People high in their "desire to touch" are more likely to make impulse purchases. Point-of-purchase signs that encourage touching a product...

  18. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

    Science.gov (United States)

    Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

    2018-04-18

    A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

  19. Highly Crumpled All-Carbon Transistors for Brain Activity Recording.

    Science.gov (United States)

    Yang, Long; Zhao, Yan; Xu, Wenjing; Shi, Enzheng; Wei, Wenjing; Li, Xinming; Cao, Anyuan; Cao, Yanping; Fang, Ying

    2017-01-11

    Neural probes based on graphene field-effect transistors have been demonstrated. Yet, the minimum detectable signal of graphene transistor-based probes is inversely proportional to the square root of the active graphene area. This fundamentally limits the scaling of graphene transistor-based neural probes for improved spatial resolution in brain activity recording. Here, we address this challenge using highly crumpled all-carbon transistors formed by compressing down to 16% of its initial area. All-carbon transistors, chemically synthesized by seamless integration of graphene channels and hybrid graphene/carbon nanotube electrodes, maintained structural integrity and stable electronic properties under large mechanical deformation, whereas stress-induced cracking and junction failure occurred in conventional graphene/metal transistors. Flexible, highly crumpled all-carbon transistors were further verified for in vivo recording of brain activity in rats. These results highlight the importance of advanced material and device design concepts to make improvements in neuroelectronics.

  20. The total dose effects on the 1/f noise of deep submicron CMOS transistors

    International Nuclear Information System (INIS)

    Hu Rongbin; Wang Yuxin; Lu Wu

    2014-01-01

    Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO 2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion. (semiconductor devices)

  1. A Deported View Concept for Touch Interaction

    DEFF Research Database (Denmark)

    Alapetite, Alexandre; Andersen, Henning Boje; Fogh, Rune

    2013-01-01

    Following the paradigm shift where physical controls are replaced by touch-enabled surfaces, we report on an experimental evaluation of a user interface concept that allows touchscreen-based panels to be manipulated partially blindly (aircrafts, cars). The proposed multi-touch interaction strategy...... – involving visual front-view feedback to the user from a copy of the peripheral panel being manipulated – compares favourably against trackballs or head-down interactions....

  2. High Accuracy Transistor Compact Model Calibrations

    Energy Technology Data Exchange (ETDEWEB)

    Hembree, Charles E. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Mar, Alan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Robertson, Perry J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2015-09-01

    Typically, transistors are modeled by the application of calibrated nominal and range models. These models consists of differing parameter values that describe the location and the upper and lower limits of a distribution of some transistor characteristic such as current capacity. Correspond- ingly, when using this approach, high degrees of accuracy of the transistor models are not expected since the set of models is a surrogate for a statistical description of the devices. The use of these types of models describes expected performances considering the extremes of process or transistor deviations. In contrast, circuits that have very stringent accuracy requirements require modeling techniques with higher accuracy. Since these accurate models have low error in transistor descriptions, these models can be used to describe part to part variations as well as an accurate description of a single circuit instance. Thus, models that meet these stipulations also enable the calculation of quantifi- cation of margins with respect to a functional threshold and uncertainties in these margins. Given this need, new model high accuracy calibration techniques for bipolar junction transis- tors have been developed and are described in this report.

  3. Transparent conductive-polymer strain sensors for touch input sheets of flexible displays

    International Nuclear Information System (INIS)

    Takamatsu, Seiichi; Takahata, Tomoyuki; Muraki, Masato; Iwase, Eiji; Matsumoto, Kiyoshi; Shimoyama, Isao

    2010-01-01

    A transparent conductive polymer-based strain-sensor array, designed especially for touch input sheets of flexible displays, was developed. A transparent conductive polymer, namely poly(3, 4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS), was utilized owing to its strength under repeated mechanical bending. PEDOT:PSS strain sensors with a thickness of 130 nm exhibited light transmittance of 92%, which is the same as the transmittance of ITO electrodes widely used in flat panel displays. We demonstrated that the sensor array on a flexible sheet was able to sustain mechanical bending 300 times at a bending radius of 5 mm. The strain sensor shows a gauge factor of 5.2. The touch point on a flexible sheet could be detected from histograms of the outputs of the strain sensors when the sheet was pushed with an input force of 5 N. The touch input could be detected on the flexible sheet with a curved surface (radius of curvature of 20 mm). These results show that the developed transparent conductive polymer-based strain-sensor array is applicable to touch input sheets of mechanically bendable displays.

  4. High gain, low noise, fully complementary logic inverter based on bi-layer WSe{sub 2} field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Das, Saptarshi; Roelofs, Andreas [Center for Nanoscale Material, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Dubey, Madan [U.S. Army Research Laboratory, Adelphi, Maryland 20783 (United States)

    2014-08-25

    In this article, first, we show that by contact work function engineering, electrostatic doping and proper scaling of both the oxide thickness and the flake thickness, high performance p- and n-type WSe{sub 2} field effect transistors (FETs) can be realized. We report record high drive current of 98 μA/μm for the electron conduction and 110 μA/μm for the hole conduction in Schottky barrier WSe{sub 2} FETs. Then, we combine high performance WSe{sub 2} PFET with WSe{sub 2} NFET in double gated transistor geometry to demonstrate a fully complementary logic inverter. We also show that by adjusting the threshold voltages for the NFET and the PFET, the gain and the noise margin of the inverter can be significantly enhanced. The maximum gain of our chemical doping free WSe{sub 2} inverter was found to be ∼25 and the noise margin was close to its ideal value of ∼2.5 V for a supply voltage of V{sub DD} = 5.0 V.

  5. Sensing small neurotransmitter-enzyme interaction with nanoporous gated ion-sensitive field effect transistors.

    Science.gov (United States)

    Kisner, Alexandre; Stockmann, Regina; Jansen, Michael; Yegin, Ugur; Offenhäusser, Andreas; Kubota, Lauro Tatsuo; Mourzina, Yulia

    2012-01-15

    Ion-sensitive field effect transistors with gates having a high density of nanopores were fabricated and employed to sense the neurotransmitter dopamine with high selectivity and detectability at micromolar range. The nanoporous structure of the gates was produced by applying a relatively simple anodizing process, which yielded a porous alumina layer with pores exhibiting a mean diameter ranging from 20 to 35 nm. Gate-source voltages of the transistors demonstrated a pH-dependence that was linear over a wide range and could be understood as changes in surface charges during protonation and deprotonation. The large surface area provided by the pores allowed the physical immobilization of tyrosinase, which is an enzyme that oxidizes dopamine, on the gates of the transistors, and thus, changes the acid-base behavior on their surfaces. Concentration-dependent dopamine interacting with immobilized tyrosinase showed a linear dependence into a physiological range of interest for dopamine concentration in the changes of gate-source voltages. In comparison with previous approaches, a response time relatively fast for detecting dopamine was obtained. Additionally, selectivity assays for other neurotransmitters that are abundantly found in the brain were examined. These results demonstrate that the nanoporous structure of ion-sensitive field effect transistors can easily be used to immobilize specific enzyme that can readily and selectively detect small neurotransmitter molecule based on its acid-base interaction with the receptor. Therefore, it could serve as a technology platform for molecular studies of neurotransmitter-enzyme binding and drugs screening. Copyright © 2011 Elsevier B.V. All rights reserved.

  6. Ultrasmall transistor-based light sources

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Tavares, Luciana; Kjelstrup-Hansen, Jakob

    Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip.......Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip....

  7. Quantum ballistic transistor and low noise HEMT for cryo-electronics lower than 4.2 K

    International Nuclear Information System (INIS)

    Gremion, E.

    2008-01-01

    Next generations of cryo-detectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryo-electronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryo-electronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4.2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 μW. Under the above experimental conditions, an equivalent input voltage noise of 1.2 nV/√(Hz) at 1 kHz and 0.12 nV/√(Hz) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF. (author)

  8. Goal-Role Integration as Driver for Customer Engagement Behaviours across Touch-points

    DEFF Research Database (Denmark)

    Haurum, Helle; Beckmann, Suzanne C.

    Customers and firms interact at many different touch-points that enable customer engagement behaviour. By adopting a customer-centric approach we investigated through 20 in-depth interviews what drives service customers’ CEB manifestations in touch-points, which the firm either manages, monitors......, or manoeuvres between. The key findings are that (a) CEBs are driven by different forms of goal-role integration across touch-points, (b) customers’ goal-directedness determines the touch-points where CEBs are manifested, (c) customers’ role-playing behaviours determine the nature of CEBs, and (d) customers......’ role-playing behaviours can change across touch-points, contingent upon goal-directedness. Hence, this study provides rich insights into customer-firm encounters at touch-points, which subsequently define and shape the relation over time....

  9. Antibacterial Metallic Touch Surfaces

    Directory of Open Access Journals (Sweden)

    Victor M. Villapún

    2016-08-01

    Full Text Available Our aim is to present a comprehensive review of the development of modern antibacterial metallic materials as touch surfaces in healthcare settings. Initially we compare Japanese, European and US standards for the assessment of antimicrobial activity. The variations in methodologies defined in these standards are highlighted. Our review will also cover the most relevant factors that define the antimicrobial performance of metals, namely, the effect of humidity, material geometry, chemistry, physical properties and oxidation of the material. The state of the art in contact-killing materials will be described. Finally, the effect of cleaning products, including disinfectants, on the antimicrobial performance, either by direct contact or by altering the touch surface chemistry on which the microbes attach, will be discussed. We offer our outlook, identifying research areas that require further development and an overview of potential future directions of this exciting field.

  10. Atmospheric pressure plasma jets interacting with liquid covered tissue: touching and not-touching the liquid

    International Nuclear Information System (INIS)

    Norberg, Seth A; Johnsen, Eric; Tian, Wei; Kushner, Mark J

    2014-01-01

    In the use of atmospheric pressure plasma jets in biological applications, the plasma-produced charged and neutral species in the plume of the jet often interact with a thin layer of liquid covering the tissue being treated. The plasma-produced reactivity must then penetrate through the liquid layer to reach the tissue. In this computational investigation, a plasma jet created by a single discharge pulse at three different voltages was directed onto a 200 µm water layer covering tissue followed by a 10 s afterglow. The magnitude of the voltage and its pulse length determined if the ionization wave producing the plasma plume reached the surface of the liquid. When the ionization wave touches the surface, significantly more charged species were created in the water layer with H 3 O + aq , O 3 − aq , and O 2 − aq being the dominant terminal species. More aqueous OH aq , H 2 O 2aq , and O 3aq were also formed when the plasma plume touches the surface. The single pulse examined here corresponds to a low repetition rate plasma jet where reactive species would be blown out of the volume between pulses and there is not recirculation of flow or turbulence. For these conditions, N x O y species do not accumulate in the volume. As a result, aqueous nitrites, nitrates, and peroxynitrite, and the HNO 3aq and HOONO aq , which trace their origin to solvated N x O y , have low densities. (paper)

  11. Molecular materials for organic field-effect transistors

    International Nuclear Information System (INIS)

    Mori, T

    2008-01-01

    Organic field-effect transistors are important applications of thin films of molecular materials. A variety of materials have been explored for improving the performance of organic transistors. The materials are conventionally classified as p-channel and n-channel, but not only the performance but also even the carrier polarity is greatly dependent on the combinations of organic semiconductors and electrode materials. In this review, particular emphasis is laid on multi-sulfur compounds such as tetrathiafulvalenes and metal dithiolates. These compounds are components of highly conducting materials such as organic superconductors, but are also used in organic transistors. The charge-transfer complexes are used in organic transistors as active layers as well as electrodes. (topical review)

  12. Low-voltage organic field effect transistors with a 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene semiconductor layer.

    Science.gov (United States)

    Amin, Atefeh Y; Khassanov, Artoem; Reuter, Knud; Meyer-Friedrichsen, Timo; Halik, Marcus

    2012-10-10

    An asymmetric n-alkyl substitution pattern was realized in 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene (C(13)-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm(2)/(V·s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT π-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.

  13. Multiple-channel detection of cellular activities by ion-sensitive transistors

    Science.gov (United States)

    Machida, Satoru; Shimada, Hideto; Motoyama, Yumi

    2018-04-01

    An ion-sensitive field-effect transistor to record cellular activities was demonstrated. This field-effect transistor (bio transistor) includes cultured cells on the gate insulator instead of gate electrode. The bio transistor converts a change in potential underneath the cells into variation of the drain current when ion channels open. The bio transistor has high detection sensitivity to even minute variations in potential utilizing a subthreshold swing region. To open ion channels, a reagent solution (acetylcholine) was added to a human-originating cell cultured on the bio transistor. The drain current was successfully decreased with the addition of acetylcholine. Moreover, we attempted to detect the opening of ion channels using a multiple-channel measurement circuit containing several bio transistors. As a consequence, the drain current distinctly decreased only after the addition of acetylcholine. We confirmed that this measurement system including bio transistors enables to observation of cellular activities sensitively and simultaneously.

  14. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yurchuk, Ekaterina

    2015-02-06

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  15. Creating iPhone Apps with Cocoa Touch

    CERN Document Server

    Hockenberry, Craig

    2010-01-01

    Creating iPhone Apps with Cocoa Touch: The Mini Missing Manual walks you through developing your first iPhone App and introduces you to your programming environments and tools: Cocoa Touch, Interface Builder, Xcode, and the Objective-C programming language. If you're a Java or C developer, this eBook is your fast track to App development. This eBook is adapted from parts of iPhone App Development: The Missing Manual.

  16. Discomfort and avoidance of touch: new insights on the emotional deficits of social anxiety.

    Science.gov (United States)

    Kashdan, Todd B; Doorley, James; Stiksma, Melissa C; Hertenstein, Matthew J

    2017-12-01

    Physical touch is central to the emotional intimacy that separates romantic relationships from other social contexts. In this study of 256 adults (128 heterosexual couples, mean relationship length = 20.5 months), we examined whether individual differences in social anxiety influenced comfort with and avoidance of physical touch. Because of prior work on sex difference in touch use, touch comfort, and social anxiety symptoms and impairment, we explored sex-specific findings. We found evidence that women with greater social anxiety were less comfortable with touch and more avoidant of touch in same-sex friendships. Additionally, a woman's social anxiety had a bigger effect on a man's comfort with touch and avoidance of touch in the romantic relationship than a man's social anxiety had on the woman's endorsement of touch-related problems. These effects were uninfluenced by the length of romantic relationships. Touch is a neglected emotional experience that offers new insights into the difficulties of individuals suffering from social anxiety problems, and their romantic partners.

  17. Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.

    Science.gov (United States)

    Wang, Ching-Hua; Incorvia, Jean Anne C; McClellan, Connor J; Yu, Andrew C; Mleczko, Michal J; Pop, Eric; Wong, H-S Philip

    2018-05-09

    Black phosphorus (BP) is a promising two-dimensional (2D) material for nanoscale transistors, due to its expected higher mobility than other 2D semiconductors. While most studies have reported ambipolar BP with a stronger p-type transport, it is important to fabricate both unipolar p- and n-type transistors for low-power digital circuits. Here, we report unipolar n-type BP transistors with low work function Sc and Er contacts, demonstrating a record high n-type current of 200 μA/μm in 6.5 nm thick BP. Intriguingly, the electrical transport of the as-fabricated, capped devices changes from ambipolar to n-type unipolar behavior after a month at room temperature. Transmission electron microscopy analysis of the contact cross-section reveals an intermixing layer consisting of partly oxidized metal at the interface. This intermixing layer results in a low n-type Schottky barrier between Sc and BP, leading to the unipolar behavior of the BP transistor. This unipolar transport with a suppressed p-type current is favorable for digital logic circuits to ensure a lower off-power consumption.

  18. Therapeutic touch: influence on vital signs of newborns.

    Science.gov (United States)

    Ramada, Nadia Christina Oliveira; Almeida, Fabiane de Amorim; Cunha, Mariana Lucas da Rocha

    2013-12-01

    To compare vital signs before and after the therapeutic touch observed in hospitalized newborns in neonatal intensive care unit. This was a quasi-experimental study performed at a neonatal intensive care unit of a municipal hospital, in the city of São Paulo (SP), Brazil. The sample included 40 newborns submitted to the therapeutic touch after a painful procedure. We evaluated the vital signs, such as heart and respiratory rates, temperature and pain intensity, before and after the therapeutic touch. The majority of newborns were male (n=28; 70%), pre-term (n=19; 52%) and born from vaginal delivery (n=27; 67%). Respiratory distress was the main reason for hospital admission (n=16; 40%). There was a drop in all vital signs after therapeutic touch, particularly in pain score, which had a considerable reduction in the mean values, from 3.37 (SD=1.31) to 0 (SD=0.0). All differences found were statistically significant by the Wilcoxon test (ptouch promotes relaxation of the baby, favoring reduction in vital signs and, consequently in the basal metabolism rate.

  19. Touching force response of the piezoelectric Braille cell.

    Science.gov (United States)

    Smithmaitrie, Pruittikorn; Kanjantoe, Jinda; Tandayya, Pichaya

    2008-11-01

    The objective of this research is to investigate dynamic responses of the piezoelectric Braille cell when it is subjected to both electrical signal and touching force. Physical behavior of the piezoelectric actuator inside the piezoelectric Braille cell is analyzed. The mathematical model of the piezoelectric Braille system is presented. Then, data of visually impaired people using a Braille Note is studied as design information and a reference input for calculation of the piezoelectric Braille response under the touching force. The results show dynamic responses of the piezoelectric Braille cell. The designed piezoelectric bimorph has a settling time of 0.15 second. The relationship between the Braille dot height and applied voltage is linear. The behavior of the piezoelectric Braille dot when it is touched during operation shows that the dot height is decreased as the force increases. The result provides understanding of the piezoelectric Braille cell behavior under both touching force and electrical excitation simultaneously. This is the important issue for the design and development of piezoelectric Braille cells in senses of controlling Braille dot displacement or force-feedback in the future.

  20. Combining mediated social touch with vision : from self-attribution to telepresence?

    NARCIS (Netherlands)

    Haans, A.; IJsselsteijn, W.A.; Nijholt, A.; Dijk, E.O.; Lemmens, P.M.C.; Luitjens, S.

    2010-01-01

    Combining mediated social touch (i.e., interpersonal touch over a distance by means of a tactile display) with vision allows people to both see and feel their remote interaction partner’s touches. This is expected to increase the user’s sense of telepresence (i.e., the experience of "being there" in

  1. Photon-gated spin transistor

    OpenAIRE

    Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

    2017-01-01

    Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

  2. Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

    Science.gov (United States)

    Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

    2012-01-01

    Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

  3. Organic Thin-Film Transistor (OTFT-Based Sensors

    Directory of Open Access Journals (Sweden)

    Daniel Elkington

    2014-04-01

    Full Text Available Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.

  4. Negative Differential Transconductance in a MoS2 /WSe2 Heterojunction Field Effect Transistor

    Science.gov (United States)

    Zubair, Ahmad; Nourbakhsh, Amirhasan; Dresselhaus, Mildred; de Gendt, Stefan; Palacios, Tomas

    2015-03-01

    In this work, we demonstrate the negative transconductance in heterojunction transistors made of two-dimensional materials for the first time. Negative transconductance plays a key role in multi-valued logic/memory and frequency multiplication circuits. The simpler fabrication method of stacked van der Waals heterostructures compared to the conventional bulk semiconductors and large area CVD growth of the layered 2D materials systems makes it a prime candidate for scalable novel applications of their heterostructures. Vertically stacked MoS2/WSe2 heterostructures are fabricated by mechanical exfoliation and an in-house dry transfer process. A two-step process of e-beam lithography and metal deposition (Au on MoS2, and Pd on WSe2) were performed to fabricate n-type MoS2 and ambipolar WSe2 FET. The transfer characteristics on the non-overlapping regions shows the expected characteristics of the n-type, MoS2 FET and ambipolar WSe2 FET. At the same time, the transfer characteristics of the overlapping region between MoS2 and WSe2 show negative differential transconductance. With proper scaling and careful optimization this negative differential transconductance will lead to novel applications.

  5. Doped organic transistors operating in the inversion and depletion regime

    Science.gov (United States)

    Lüssem, Björn; Tietze, Max L.; Kleemann, Hans; Hoßbach, Christoph; Bartha, Johann W.; Zakhidov, Alexander; Leo, Karl

    2013-01-01

    The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still need much improvement. In particular, despite more than 20 years of research, organic inversion mode transistors have not been reported so far. Here we discuss the first realization of organic inversion transistors and the optimization of organic depletion transistors by our organic doping technology. We show that the transistor parameters—in particular, the threshold voltage and the ON/OFF ratio—can be controlled by the doping concentration and the thickness of the transistor channel. Injection of minority carriers into the doped transistor channel is achieved by doped contacts, which allows forming an inversion layer. PMID:24225722

  6. To touch the science through the experiment!

    Science.gov (United States)

    Słowik, Grzegorz

    2016-04-01

    To touch the science through the experiment! Grzegorz P. Slowik, Gymnasium No. 2 in Zielona Gora, Poland Our School - Gymnasium No. 2 in Zielona Gora - where pupils' age is 13 -16, has for many years organized a lot of exciting events popularizing science among Zielona Gora children and young people, in particular experimental physics and astronomy. The best known in our town is the regular event on physics, - called the physical Festival of Zielona Gora, of which I am the main initiator and organizer. The Festival is directed to students of the last classes of Zielona Góra primary schools. During the Festivities their shows have also physicists and astronomers, from cooperating with us in popularization of science Zielona Gora University. At the festival the students from our Experimental School Group "Archimedes". Presented their own prepared themselves physical experience. With considerable help of students of Gymnasium No. 2 interested in astronomy, we organize the cyclical event, named "Cosmic Santa Claus," where I share with the students the knowledge gained through my active annual participation in the Space Workshop organized by the Science Centre in Warsaw. We all have fun and learn in a great way and with a smile, we touch real science that reveals its secrets!

  7. Sencha Touch Mobile JavaScript Framework

    CERN Document Server

    Rao, SSVV Narasimha

    2012-01-01

    This book is a step-by-step tutorial aimed at beginners to Sencha Touch. There is ready sample code explained with essential screenshots for better and quicker understanding. This book is ideal for anyone who wants to gain the practical knowledge involved in using Sencha Touch mobile web application framework to make attractive web apps for mobiles. If you have some familiarity with HTML and CSS, then this book is for you. This book will give designers the skills they need to implement their ideas, and provides developers with creative inspiration through practical examples. It is assumed that

  8. Organic field-effect transistors using single crystals

    International Nuclear Information System (INIS)

    Hasegawa, Tatsuo; Takeya, Jun

    2009-01-01

    Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. (topical review)

  9. Implementation of Self-Bias Transistor on Voting Logic

    International Nuclear Information System (INIS)

    Harzawardi Hasim; Syirrazie Che Soh

    2014-01-01

    Study in the eld of digital integrated circuit (IC) already become common to the modern industrial. Day by day we have been introduced with new gadget that was developed based on transistor. This paper will study the implementation of self-bias transistor on voting logic. The self-bias transistor will connected both on pull-up network and pull-down network. On previous research, study on comparison of total number of transistors, time propagation delay, and frequency between NAND and NOR gate of voting logic. It's show, with the same number of transistor, NAND gate achieve high frequency and low time propagation delay compare to NOR gate. We extend this analysis by comparing the total number of transistor, time propagation delay, frequency and power dissipation between common NAND gate with self-bias NAND gate. Extensive LTSpice simulations were performed using IBM 90 nm CMOS(Complementary Metal Oxide Semiconductor) process technology. The result show self-bias voting NAND gate consumes 54 % less power dissipation, 43% slow frequency and 43 % high time propagation delay compare to common voting NAND gate. (author)

  10. A Multi-touch Tool for Co-creation

    Science.gov (United States)

    Ludden, Geke D. S.; Broens, Tom

    Multi-touch technology provides an attractive way for knowledge workers to collaborate. Co-creation is an important collaboration process in which collecting resources, creating results and distributing these results is essential. We propose a wall-based multi-touch system (called CoCreate) in which these steps are made easy due to the notion of connected private spaces and a shared co-create space. We present our ongoing work, expert evaluation of interaction scenarios and future plans.

  11. Sexual touching and difficulties with sexual arousal and orgasm among U.S. older adults.

    Science.gov (United States)

    Galinsky, Adena M

    2012-08-01

    Little is known about the non-genitally-focused sexual behavior of those experiencing sexual difficulties. The objective of this study was to review the theory supporting a link between sexual touching and difficulties with sexual arousal and orgasm, and to examine associations between these constructs among older adults in the United States. The data were from the 2005-2006 National Social Life Health and Aging Project, which surveyed 3,005 community-dwelling men and women ages 57-85 years. The 1,352 participants who had had sex in the past year reported on their frequency of sexual touching and whether there had been a period of several months or more in the past year when they were unable to climax, had trouble getting or maintaining an erection (men) or had trouble lubricating (women). Women also reported how often they felt sexually aroused during partner sex in the last 12 months. The odds of being unable to climax were greater by 2.4 times (95% CI 1.2-4.8) among men and 2.8 times (95% CI 1.4-5.5) among women who sometimes, rarely or never engaged in sexual touching, compared to those who always engaged in sexual touching, controlling for demographic factors and physical health. These results were attenuated but persisted after controlling for emotional relationship satisfaction and psychological factors. Similar results were obtained for erectile difficulties among men and subjective arousal difficulties among women, but not lubrication difficulties among women. Infrequent sexual touching is associated with arousal and orgasm difficulties among older adults in the United States.

  12. Fabrication of double-dot single-electron transistor in silicon nanowire

    International Nuclear Information System (INIS)

    Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Ono, Yukinori; Inokawa, Hiroshi; Choi, Jung-Bum; Takahashi, Yasuo

    2010-01-01

    We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

  13. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT)

    Science.gov (United States)

    Wang, Wei; Wang, Long; Xu, Guangwei; Gao, Nan; Wang, Lingfei; Ji, Zhuoyu; Lu, Congyan; Lu, Nianduan; Li, Ling; Liu, Miwng

    2017-08-01

    Mobility degradation at high gate bias is often observed in organic thin film transistors. We propose a mechanism for this confusing phenomenon, based on the percolation theory with the presence of disordered energy landscape with an exponential density of states. Within a simple model we show how the surface states at insulator/organic interface trap a portion of channel carriers, and result in decrease of mobility as well as source/drain current with gate voltage. Depending on the competition between the carrier accumulation and surface trapping effect, two different carrier density dependences of mobility are obtained, in excellent agreement with experiment data.

  14. Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.

    Science.gov (United States)

    Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

    2014-05-07

    Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.

  15. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    OpenAIRE

    Lin, Yu-Hsien; Chou, Jay-Chi

    2014-01-01

    This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chem...

  16. The Neurobiology Shaping Affective Touch: Expectation, Motivation, and Meaning in the Multisensory Context

    Science.gov (United States)

    Ellingsen, Dan-Mikael; Leknes, Siri; Løseth, Guro; Wessberg, Johan; Olausson, Håkan

    2016-01-01

    Inter-individual touch can be a desirable reward that can both relieve negative affect and evoke strong feelings of pleasure. However, if other sensory cues indicate it is undesirable to interact with the toucher, the affective experience of the same touch may be flipped to disgust. While a broad literature has addressed, on one hand the neurophysiological basis of ascending touch pathways, and on the other hand the central neurochemistry involved in touch behaviors, investigations of how external context and internal state shapes the hedonic value of touch have only recently emerged. Here, we review the psychological and neurobiological mechanisms responsible for the integration of tactile “bottom–up” stimuli and “top–down” information into affective touch experiences. We highlight the reciprocal influences between gentle touch and contextual information, and consider how, and at which levels of neural processing, top-down influences may modulate ascending touch signals. Finally, we discuss the central neurochemistry, specifically the μ-opioids and oxytocin systems, involved in affective touch processing, and how the functions of these neurotransmitters largely depend on the context and motivational state of the individual. PMID:26779092

  17. The neurobiology shaping affective touch: Expectation, motivation, and meaning in the multisensory context

    Directory of Open Access Journals (Sweden)

    Dan-Mikael eEllingsen

    2016-01-01

    Full Text Available Inter-individual touch can be a desirable reward that can both relieve negative affect and evoke strong feelings of pleasure. However, if other sensory cues indicate it is undesirable to interact with the toucher, the affective experience of the same touch may be flipped to disgust. While a broad literature has addressed, on one hand the neurophysiological basis of ascending touch pathways, and on the other hand the central neurochemistry involved in touch behaviors, investigations of how external context and internal state shapes the hedonic value of touch have only recently emerged. Here, we review the psychological and neurobiological mechanisms responsible for the integration of tactile bottom-up stimuli and top-down information into affective touch experiences. We highlight the reciprocal influences between gentle touch and contextual information, and consider how, and at which levels of neural processing, top-down influences may modulate ascending touch signals. Finally, we discuss the central neurochemistry, specifically the µ-opioids and oxytocin systems, involved in affective touch processing, and how the functions of these neurotransmitters largely depend on the context and motivational state of the individual.

  18. Braille Touch : Mobile Touchscreen Text Entry for the Visually Impaired

    OpenAIRE

    Southern, Caleb; Clawson, James; Frey, Brian; Abowd, Gregory; Romero, Mario

    2012-01-01

    We present a demonstration of BrailleTouch, an accessible keyboard for blind users on a touchscreen smartphone (see Figure 1). Based on the standard Perkins Brailler, BrailleTouch implements a six-key chorded braille soft keyboard [1]. We will briefly introduce audience members to the braille code, and then allow them to hold the BrailleTouch prototype and enter text, with the aid of a visual chart of the braille alphabet. QC 20160418

  19. Toddlers' Word Learning from Contingent and Noncontingent Video on Touch Screens

    Science.gov (United States)

    Kirkorian, Heather L.; Choi, Koeun; Pempek, Tiffany A.

    2016-01-01

    Researchers examined whether contingent experience using a touch screen increased toddlers' ability to learn a word from video. One hundred and sixteen children (24-36 months) watched an on-screen actress label an object: (a) without interacting, (b) with instructions to touch "anywhere" on the screen, or (c) with instructions to touch a…

  20. The Use of Touch in Counseling: An Ethical Decision-Making Model

    Science.gov (United States)

    Calmes, Stephanie A.; Piazza, Nick J.; Laux, John M.

    2013-01-01

    Although some counselors have advocated for the limited use of touch in counseling, others have argued that touch has no place within the counseling relationship. Despite the controversy, the use of touch has been shown to have a number of therapeutic benefits; however, there are few ethical decision-making models that are appropriate for…

  1. CMOS-based carbon nanotube pass-transistor logic integrated circuits

    Science.gov (United States)

    Ding, Li; Zhang, Zhiyong; Liang, Shibo; Pei, Tian; Wang, Sheng; Li, Yan; Zhou, Weiwei; Liu, Jie; Peng, Lian-Mao

    2012-01-01

    Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration. PMID:22334080

  2. Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

    Directory of Open Access Journals (Sweden)

    Filippo Giannazzo

    2017-01-01

    Full Text Available Molybdenum disulphide (MoS2 is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ and the threshold voltage (Vth. This paper reports a detailed electrical characterization of back-gated multilayer MoS2 transistors with Ni source/drain contacts at temperatures from T = 298 to 373 K, i.e., the expected range for transistor operation in circuits/systems, considering heating effects due to inefficient power dissipation. From the analysis of the transfer characteristics (ID−VG in the subthreshold regime, the Schottky barrier height (ΦB ≈ 0.18 eV associated with the Ni/MoS2 contact was evaluated. The resulting contact resistance in the on-state (electron accumulation in the channel was also determined and it was found to increase with T as RC proportional to T3.1. The contribution of RC to the extraction of μ and Vth was evaluated, showing a more than 10% underestimation of μ when the effect of RC is neglected, whereas the effect on Vth is less significant. The temperature dependence of μ and Vth was also investigated. A decrease of μ proportional to 1/Tα with α = 1.4 ± 0.3 was found, indicating scattering by optical phonons as the main limiting mechanism for mobility above room temperature. The value of Vth showed a large negative shift (about 6 V increasing the temperature from 298 to 373 K, which was explained in terms of electron

  3. Efficient simulation of power MOS transistors

    NARCIS (Netherlands)

    Ugryumova, M.; Schilders, W.H.A.

    2011-01-01

    In this report we present a few industrial problems related to modeling of MOS transistors. We suggest an efficient algorithm for computing output current at the top ports of power MOS transistors for given voltage excitations. The suggested algorithm exploits the connection between the resistor and

  4. Analysis of touch used by occupational therapy practitioners in skilled nursing facilities.

    Science.gov (United States)

    Morris, Douglas; Henegar, J; Khanin, S; Oberle, G; Thacker, S

    2014-09-01

    Instrumental touch is identified as having purposeful physical contact in order to complete a task. Expressive touch is identified as warm, friendly physical contact and is not solely for performing a task. Expressive touch has been associated with improved client status, increased rapport and greater gains made during therapy. The purpose of the study was to observe the frequency of expressive and instrumental touch utilized by an occupational therapist during an occupational therapy session. Thirty-three occupational therapy professionals, including occupational therapists and occupational therapy assistants, employed at skilled nursing facilities in southwest Florida were observed. Data were collected on the Occupational Therapy Interaction Assessment. The results of the data analysis showed a positive relationship between the gender of the therapist and the frequency of expressive touch. The data also showed that a large majority of touches were instrumental touch and pertained to functional mobility. The results of the study can contribute to a better understanding of the holistic aspects of occupational therapy. By the use of more expressive touch, occupational therapy practitioners may have a positive, beneficial effect on both the client and the therapy process as a whole. Further research is needed to determine the effect an occupational therapy setting has on the frequency of instrumental and expressive touch. A larger sample size and a distinction between evaluation and treatment sessions would benefit future studies. Copyright © 2014 John Wiley & Sons, Ltd.

  5. Water-gel for gating graphene transistors.

    Science.gov (United States)

    Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

    2014-05-14

    Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

  6. Multiple caregivers' touch interactions with young children among the Bofi foragers in Central Africa.

    Science.gov (United States)

    Jung, Min-Jung; Fouts, Hillary N

    2011-02-01

    The current study examined the use of three types of touch (caregiving, active social-affectionate, and passive social-affectionate) by caregivers with young children among the Bofi foragers, a seminomadic group of hunter-gatherers in Central Africa. With the purpose of providing a more holistic view of touch interactions in early childhood, compared to extant Western mother-centric views, this study documents stylistic touch patterns used by multiple caregivers (mother, father, adult relatives, and juvenile relatives) with Bofi forager children. Thirty-five Bofi forager children, between 18 and 59 months of age, and their various caregivers were naturalistically observed over 12 daylight hours using a focal child observational technique. Frequencies of each type of touch and the rank order of types of touch that children received were compared between caregivers and examined by child age and gender. Even though nonmaternal caregivers showed high physical involvement with children, mothers exemplified the highest level of involvement. Overall, passive social-affectionate touch was utilized the most by all types of caregivers. Mothers used more caregiving touch, and fathers and adult relatives had similar frequencies of caregiving touch and active social-affectionate touch. In contrast, juvenile relatives showed more active social-affectionate touch with focal children. This study highlights the importance of examining multiple caregivers and physical interactions when studying early childhood experiences. Furthermore, by focusing on multiple caregivers and multiple types of touch, this study provides a more thorough characterization of the touch experiences of young children than previous studies of touch. Finally, the current study exemplifies the value of considering non-Western populations when investigating touch interactions.

  7. Construction of simple quartz crystal microbalance

    Energy Technology Data Exchange (ETDEWEB)

    Ristov, Milcho [Center of Energy, Informatics and Materials of the Macedonian Academy fo Science and Arts, Skopje (Macedonia, The Former Yugoslav Republic of); Mitrevski, Mitre [Institute of Physics, Faculty of natural Science and Mathematics, Ss Cyril and Methodius University, Skopje (Macedonia, The Former Yugoslav Republic of)

    2003-07-01

    A very simple Quartz Crystal Microbalance (QCM) was constructed for the measurement of thickness of chemically deposited thin films. QCM consisted of two active elements: one dual-gate MOSFET and one bipolar transistor, and as usually two AT-cut quartz crystal. The beat frequency oscillation generated as a result of loading of the sensor crystal by the deposited thin film, was measured by HP-multimeter, set as a low frequency meter. The sensitivity was found to be high and satisfactory for the study of growth rate of thin films, mainly deposited by methods of chemical deposition.

  8. Construction of simple quartz crystal microbalance

    International Nuclear Information System (INIS)

    Ristov, Milcho; Mitrevski, Mitre

    2002-01-01

    A very simple Quartz Crystal Microbalance (QCM) was constructed for the measurement of thickness of chemically deposited thin films. QCM consisted of two active elements: one dual-gate MOSFET and one bipolar transistor, and as usually two AT-cut quartz crystal. The beat frequency oscillation generated as a result of loading of the sensor crystal by the deposited thin film, was measured by HP-multimeter, set as a low frequency meter. The sensitivity was found to be high and satisfactory for the study of growth rate of thin films, mainly deposited by methods of chemical deposition.

  9. Infant Imitation from Television Using Novel Touch Screen Technology

    Science.gov (United States)

    Zack, Elizabeth; Barr, Rachel; Gerhardstein, Peter; Dickerson, Kelly; Meltzoff, Andrew N.

    2009-01-01

    Infants learn less from a televised demonstration than from a live demonstration, the "video deficit effect." The present study employs a novel approach, using touch screen technology to examine 15-month olds' transfer of learning. Infants were randomly assigned either to within-dimension (2D/2D or 3D/3D) or cross-dimension (3D/2D or 2D/3D)…

  10. Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors

    International Nuclear Information System (INIS)

    Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Gwarek, W.

    2008-01-01

    Detection of 100 GHz electromagnetic radiation by a GaAs/AlGaAs high electron mobility field-effect transistor was investigated at 300 K as a function of the angle α between the direction of linear polarization of the radiation and the symmetry axis of the transistor. The angular dependence of the detected signal was found to be A 0 cos 2 (α-α 0 )+C with A 0 , α 0 , and C dependent on the electrical polarization of the transistor gate. This dependence is interpreted as due to excitation of two crossed phase-shifted oscillators. A response of the transistor chip (including bonding wires and the substrate) to 100 GHz radiation was numerically simulated. Results of calculations confirmed experimentally observed dependencies and showed that the two oscillators result from an interplay of 100 GHz currents defined by the transistor impedance together with bonding wires and substrate related modes

  11. HOMEinTOUCH

    DEFF Research Database (Denmark)

    Petersen, Marianne Graves; Borup Hansen, Aviaja; Rosengreen Nielsen, Kaspar

    2008-01-01

    Digital Picture Frames has received attention both research wise and by consumers, who are increasingly buying existing solutions. In this paper we investigate how to design improved picture frames through providing means for two-way communication and through exploring the potential in providing...... automatically generated context information. We report on the design and trial use of a HOMEinTOUCH, an experience prototype of a picture frame for domestic environment, supporting two-way communication and context-information around pictures. We tested this prototype, as well as two other commercial products...

  12. Self-standing chitosan films as dielectrics in organic thin-film transistors

    Directory of Open Access Journals (Sweden)

    J. Morgado

    2013-12-01

    Full Text Available Organic thin film transistors, using self-standing 50 µm thick chitosan films as dielectric, are fabricated using sublimed pentacene or two conjugated polymers deposited by spin coating as semiconductors. Field-effect mobilities are found to be similar to values obtained with other dielectrics and, in the case of pentacene, a value (0.13 cm2/(V•s comparable to high performing transistors was determined. In spite of the low On/Off ratios (a maximum value of 600 was obtained for the pentacene-based transistors, these are promising results for the area of sustainable organic electronics in general and for biocompatible electronics in particular.

  13. Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang Hui; Wan, Qing, E-mail: wanqing@nju.edu.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Qiang Zhu, Li, E-mail: lqzhu@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Shi, Yi [School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2014-03-31

    Solution-processed sodium alginate electrolyte film shows a high proton conductivity of ∼5.5 × 10{sup −3} S/cm and a high lateral electric-double-layer (EDL) capacitance of ∼2.0 μF/cm{sup 2} at room temperature with a relative humidity of 57%. Low-voltage in-plane-gate indium-zinc-oxide-based EDL transistors laterally gated by sodium alginate electrolytes are fabricated on glass substrates. The field-effect mobility, current ON/OFF ratio, and subthreshold swing of such EDL transistors are estimated to be 4.2 cm{sup 2} V{sup −1} s{sup −1}, 2.8 × 10{sup 6}, and 130 mV/decade, respectively. At last, a low-voltage driven resistor-load inverter is also demonstrated. Such in-plane-gate EDL transistors have potential applications in portable electronics and low-cost biosensors.

  14. Fabrication and characterization on reduced graphene oxide field effect transistor (RGOFET) based biosensor

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, A. Diyana [School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Pauh, Perlis (Malaysia); Ruslinda, A. Rahim, E-mail: ruslinda@unimap.edu.my; Fatin, M. F. [Institute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis (Malaysia); Hashim, U.; Arshad, M. K. [School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Pauh, Perlis (Malaysia); Institute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis (Malaysia)

    2016-07-06

    The fabrication and characterization on reduced graphene oxide field effect transistor (RGO-FET) were demonstrated using a spray deposition method for biological sensing device purpose. A spray method is a fast, low-cost and simple technique to deposit graphene and the most promising technology due to ideal coating on variety of substrates and high production speed. The fabrication method was demonstrated for developing a label free aptamer reduced graphene oxide field effect transistor biosensor. Reduced graphene oxide (RGO) was obtained by heating on hot plate fixed at various temperatures of 100, 200 and 300°C, respectively. The surface morphology of RGO were examined via atomic force microscopy to observed the temperature effect of produced RGO. The electrical measurement verify the performance of electrical conducting RGO-FET at temperature 300°C is better as compared to other temperature due to the removal of oxygen groups in GO. Thus, reduced graphene oxide was a promising material for biosensor application.

  15. Direct observation of single-charge-detection capability of nanowire field-effect transistors.

    Science.gov (United States)

    Salfi, J; Savelyev, I G; Blumin, M; Nair, S V; Ruda, H E

    2010-10-01

    A single localized charge can quench the luminescence of a semiconductor nanowire, but relatively little is known about the effect of single charges on the conductance of the nanowire. In one-dimensional nanostructures embedded in a material with a low dielectric permittivity, the Coulomb interaction and excitonic binding energy are much larger than the corresponding values when embedded in a material with the same dielectric permittivity. The stronger Coulomb interaction is also predicted to limit the carrier mobility in nanowires. Here, we experimentally isolate and study the effect of individual localized electrons on carrier transport in InAs nanowire field-effect transistors, and extract the equivalent charge sensitivity. In the low carrier density regime, the electrostatic potential produced by one electron can create an insulating weak link in an otherwise conducting nanowire field-effect transistor, modulating its conductance by as much as 4,200% at 31 K. The equivalent charge sensitivity, 4 × 10(-5) e Hz(-1/2) at 25 K and 6 × 10(-5) e Hz(-1/2) at 198 K, is orders of magnitude better than conventional field-effect transistors and nanoelectromechanical systems, and is just a factor of 20-30 away from the record sensitivity for state-of-the-art single-electron transistors operating below 4 K (ref. 8). This work demonstrates the feasibility of nanowire-based single-electron memories and illustrates a physical process of potential relevance for high performance chemical sensors. The charge-state-detection capability we demonstrate also makes the nanowire field-effect transistor a promising host system for impurities (which may be introduced intentionally or unintentionally) with potentially long spin lifetimes, because such transistors offer more sensitive spin-to-charge conversion readout than schemes based on conventional field-effect transistors.

  16. Touch me, touch me not: senses, faith and performativity in early modernity:introduction

    Directory of Open Access Journals (Sweden)

    Erin E. Benay

    2015-02-01

    Full Text Available This issue brings together an exciting collection of essays that investigate the collaborative roles of senses in the genesis and experience of renaissance and baroque art. Examining, in particular, the ways in which senses were evoked in the realm of the sacred, where questions of the validity of sensory experience were particularly contentious and fluid, the contributors seek to problematise the neoplatonic imperialism of sight and sense hierarchies that traditionally considered touch, along with smell and taste, as base and bodily. The essays show instead that it was a multiplicity of sensory modalities – touch, sight, hearing, and sometimes even taste and smell, that provided access to the divine – and shaped the imaginative, physical and performative experience of works of art. The issue’s project thus brings us closer to achieving Geraldine Johnson’s eloquent proprosal, that, by revisioning Michael Baxandall’s famous ‘period eye’, we might, in fact, arrive at a more aptly described, historically specific, 'period body'.

  17. Therapeutic touch is not therapeutic for procedural pain in very preterm neonates: a randomized trial.

    Science.gov (United States)

    Johnston, Celeste; Campbell-Yeo, Marsha; Rich, Bonnie; Whitley, Julie; Filion, Francoise; Cogan, Jennifer; Walker, Claire-Dominique

    2013-09-01

    Preterm neonates below 30 weeks' gestational age undergo numerous painful procedures. Many management approaches are not appropriate for this population. Therapeutic Touch, an alternative approach based on the theory of energy medicine, has been shown to promote physiological stability in preterm neonates and reduce pain in some adult studies. The objective was to determine whether Therapeutic Touch is efficacious in decreasing pain in preterm neonates. Infants Touch (n = 27) with infant behind curtains, leaving the curtained area for the heel lance, performed by another. In the sham condition (n = 28), the therapist stood by the incubator with hands by her side. The Premature Infant Pain Profile was used for pain response and time for heart rate to return to baseline for recovery. Heart rate variability and stress response were secondary outcomes. There were no group differences in any of the outcomes. Mean Premature Infant Pain Profile scores across 2 minutes of heel lance procedure in 30-second blocks ranged from 7.92 to 8.98 in the Therapeutic Touch group and 7.64 to 8.46 in the sham group. Therapeutic Touch given immediately before and after heel lance has no comforting effect in preterm neonates. Other effective strategies involving actual touch should be considered.

  18. Transistor reset preamplifier for high-rate high-resolution spectroscopy

    International Nuclear Information System (INIS)

    Landis, D.A.; Cork, C.P.; Madden, N.W.; Goulding, F.S.

    1981-10-01

    Pulsed transistor reset of high resolution charge sensitive preamplifiers used in cooled semiconductor spectrometers can sometimes have an advantage over pulsed light reset systems. Several versions of transistor reset spectrometers using both silicon and germanium detectors have been built. This paper discusses the advantages of the transistor reset system and illustrates several configurations of the packages used for the FET and reset transistor. It also describes the preamplifer circuit and shows the performance of the spectrometer at high rates

  19. Therapeutic touch and agitation in individuals with Alzheimer's disease.

    Science.gov (United States)

    Hawranik, Pamela; Johnston, Pat; Deatrich, Judith

    2008-06-01

    Limited effective strategies exist to alleviate or treat disruptive behaviors in people with Alzheimer's disease. Fifty-one residents of a long-term care facility with Alzheimer's disease were randomly assigned to one of three intervention groups. A multiple time series, blinded, experimental design was used to compare the effectiveness of therapeutic touch, simulated therapeutic touch, and usual care on disruptive behavior. Three forms of disruptive behavior comprised the dependent variables: physical aggression, physical nonaggression, and verbal agitation. Physical nonaggressive behaviors decreased significantly in those residents who received therapeutic touch compared with those who received the simulated version and the usual care. No significant differences in physically aggressive and verbally agitated behaviors were observed across the three study groups. The study provided preliminary evidence for the potential for therapeutic touch in dealing with agitated behaviors by people with dementia. Researchers and practitioners must consider a broad array of strategies to deal with these behaviors.

  20. Parent-Child Positive Touch: Gender, Age, and Task Differences.

    Science.gov (United States)

    Aznar, Ana; Tenenbaum, Harriet R

    2016-01-01

    This study examined gender, age, and task differences in positive touch and physical proximity during mother-child and father-child conversations. Sixty-five Spanish mothers and fathers and their 4- ( M  = 53.50 months, SD  = 3.54) and 6-year-old ( M  = 77.07 months, SD  = 3.94) children participated in this study. Positive touch was examined during a play-related storytelling task and a reminiscence task (conversation about past emotions). Fathers touched their children positively more frequently during the play-related storytelling task than did mothers. Both mothers and fathers were in closer proximity to their 6-year-olds than their 4-year-olds. Mothers and fathers touched their children positively more frequently when reminiscing than when playing. Finally, 6-year-olds remained closer to their parents than did 4-year-olds. Implications of these findings for future research on children's socioemotional development are discussed.

  1. A non-invasive modality: the US virtual touch tissue quantification (VTTQ) for evaluation of breast cancer.

    Science.gov (United States)

    Tamaki, Kentaro; Tamaki, Nobumitsu; Kamada, Yoshihiko; Uehara, Kano; Miyashita, Minoru; Ishida, Takanori; Sasano, Hironobu

    2013-09-01

    We evaluated the biologic features of breast tissues using a newly developed non-invasive diagnostic system, named virtual touch tissue quantification. A total of 180 patients including 115 invasive ductal carcinoma, 30 ductal carcinoma in situ, 4 mucinous carcinoma, 7 invasive lobular carcinoma, 8 fibroadenoma, 12 fibrocystic change and 4 intraductal papilloma were studied at Nahanishi Clinic, Okinawa. We first compared the results of virtual touch tissue quantification according to each histologic subtype and determined the optimal cutoff values for virtual touch tissue quantification to distinguish benign from malignant tissues, using the receiver operating characteristic method. In addition, we also examined the correlation between virtual touch tissue quantification velocities and Ki-67, estrogen receptor, progesterone receptor or human epidermal growth factor receptor 2 in cases of invasive ductal carcinoma using linear regression analyses and Student's t-test. Virtual touch tissue quantification velocities were statistically higher in malignant cases than in benign cases (P breast cancer pathology in a non-invasive fashion.

  2. Proton Irradiation-Induced Metal Voids in Gallium Nitride High Electron Mobility Transistors

    Science.gov (United States)

    2015-09-01

    ABBREVIATIONS 2DEG two-dimensional electron gas AlGaN aluminum gallium nitride AlOx aluminum oxide CCD charged coupled device CTE coefficient of...frequency of FETs. Such a device may also be known as a heterojunction field-effect transistor (HFET), modulation-doped field-effect transistor (MODFET...electrons. This charge attracts electrons to the interface, forming the 2DEG channel. The HEMT includes a heterojunction of two semiconducting

  3. Developing C# Apps for iPhone and iPad using MonoTouch

    CERN Document Server

    Costanich, Bryan

    2011-01-01

    Developing C# Applications for iPhone and iPad using MonoTouch shows you how to use your existing C# skills to write apps for the iPhone and iPad. Fortunately, there's MonoTouch, Novell's .NET library that allows C# developers to write C# code that executes in iOS. Furthermore, MonoTouch allows you to address all the unique functions of the iPhone, iPod Touch, and iPad. And the big plus: You needn't learn any Objective-C to master MonoTouch!. Former Microsoft engineer and published app-store developer Bryan Costanich shows you how to use the tools you already know to create native apps in iOS

  4. Topography of social touching depends on emotional bonds between humans

    OpenAIRE

    Suvilehto, Juulia T.; Glerean, Enrico; Dunbar, Robin I. M.; Hari, Riitta; Nummenmaa, Lauri

    2015-01-01

    Touch is a powerful tool for communicating positive emotions. However, it has remained unknown to what extent social touch would maintain and establish social bonds. We asked a total of 1,368 people from five countries to reveal, using an Internet-based topographical self-reporting tool, those parts of their body that they would allow relatives, friends, and strangers to touch. These body regions formed relationship-specific maps in which the total area was directly related to the strength of...

  5. Wavy Architecture Thin-Film Transistor for Ultrahigh Resolution Flexible Displays

    KAUST Repository

    Hanna, Amir Nabil

    2017-11-13

    A novel wavy-shaped thin-film-transistor (TFT) architecture, capable of achieving 70% higher drive current per unit chip area when compared with planar conventional TFT architectures, is reported for flexible display application. The transistor, due to its atypical architecture, does not alter the turn-on voltage or the OFF current values, leading to higher performance without compromising static power consumption. The concept behind this architecture is expanding the transistor\\'s width vertically through grooved trenches in a structural layer deposited on a flexible substrate. Operation of zinc oxide (ZnO)-based TFTs is shown down to a bending radius of 5 mm with no degradation in the electrical performance or cracks in the gate stack. Finally, flexible low-power LEDs driven by the respective currents of the novel wavy, and conventional coplanar architectures are demonstrated, where the novel architecture is able to drive the LED at 2 × the output power, 3 versus 1.5 mW, which demonstrates the potential use for ultrahigh resolution displays in an area efficient manner.

  6. Sexual Touching and Difficulties with Sexual Arousal and Orgasm Among U.S. Older Adults

    Science.gov (United States)

    2013-01-01

    Little is known about the non-genitally-focused sexual behavior of those experiencing sexual difficulties. The objective of this study was to review the theory supporting a link between sexual touching and difficulties with sexual arousal and orgasm, and to examine associations between these constructs among older adults in the United States. The data were from the 2005–2006 National Social Life Health and Aging Project, which surveyed 3,005 community-dwelling men and women ages 57–85 years. The 1,352 participants who had had sex in the past year reported on their frequency of sexual touching and whether there had been a period of several months or more in the past year when they were unable to climax, had trouble getting or maintaining an erection (men) or had trouble lubricating (women). Women also reported how of ten they felt sexually aroused during partner sex in the last 12 months. The odds of being unable to climax were greater by 2.4 times (95% CI 1.2–4.8) among men and 2.8 times (95% CI 1.4–5.5) among women who sometimes, rarely or never engaged in sexual touching, compared to those who always engaged in sexual touching, controlling for demographic factors and physical health. These results were attenuated but persisted after controlling for emotional relationship satisfaction and psychological factors. Similar results were obtained for erectile difficulties among men and subjective arousal difficulties among women, but not lubrication difficulties among women. Infrequent sexual touching is associated with arousal and orgasm difficulties among older adults in the United States. PMID:22160881

  7. Touch DNA collection versus firearm fingerprinting: comparing evidence production and identification outcomes.

    Science.gov (United States)

    Nunn, Samuel

    2013-05-01

    A project by a metropolitan police agency in 2008-2009 had police use touch DNA kits to collect cell samples from seized firearms. To assess outcomes, results of touch DNA swabbing of firearms were compared to fingerprinting firearm evidence. The rationale was that fingerprinting, as the older technology, was the baseline against which to compare touch DNA. But little is known about ways to measure touch DNA productivity compared to fingerprinting. To examine differences between the two requires comparable measurements. Two measures were used: quantity of probative or investigative evidence produced and identification outcomes. When applied to firearms seized within an Indianapolis, IN police district, touch DNA produced a larger volume of evidence than fingerprinting, but identification outcomes for the two methods were equal. Because touch DNA was deployed by police patrol officers, there are implications for firearm forensics and the choice of forensic approaches used by police. © 2013 American Academy of Forensic Sciences.

  8. Outlook and emerging semiconducting materials for ambipolar transistors.

    Science.gov (United States)

    Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

    2014-02-26

    Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Effects of Therapeutic Touch on Healing of the Skin in Rats.

    Science.gov (United States)

    Thomaz de Souza, André Luiz; Carvalho Rosa, David Patrick; Blanco, Bruno Anjos; Passaglia, Patrícia; Stabile, Angelita Maria

    Therapeutic touch is a complementary treatment directed toward the balance of the energy field surrounding living beings. This study's aim was to investigate the effect of therapeutic touch on wound area contraction and fibroblast proliferation in rat skin. This study was conducted using 24 male Wistar rats with dorsal wounds of diameter 8mm. The rats were divided into the following two groups: a control group: in this, the wounds were sanitized with filtered water and neutral-pH soap and a treatment group: in this, the wounds were sanitized as in the control group but the rats also underwent to daily sessions of therapeutic touch. Wound area was measured on days 1, 4, and 7 using imagelab software, version 2.4 R.C. On days 4 and 7, six animals in each group were euthanized so that the lesioned tissue could be collected for fibroblast counts and histological evaluations. On days 1 and 4, wound areas were similar in both groups. Moreover, no significant differences in fibroblast counts were observed on day 4. On day 7, however, fibroblast counts were significantly higher in the treated group than in the control group, with a subsequent wound shrinkage. These data indicate that therapeutic touch may accelerate wound repair, possibly by increasing fibroblast activity. Copyright © 2017 Elsevier Inc. All rights reserved.

  10. The nonvisual illusion of self-touch: Misaligned hands and anatomical implausibility.

    Science.gov (United States)

    White, Rebekah C; Weinberg, Jennifer L; Aimola Davies, Anne M

    2015-01-01

    The self-touch illusion is elicited when the participant (with eyes closed) administers brushstrokes to a prosthetic hand while the examiner administers synchronous brushstrokes to the participant's other (receptive) hand. In three experiments we investigated the effects of misalignment on the self-touch illusion. In experiment 1 we manipulated alignment (0 degrees, 45 degrees, 90 degrees, 135 degrees, 180 degrees) of the prosthetic hand relative to the participant's receptive hand. The illusion was equally strong at 0 degrees and 45 degrees: the two conditions in which the prosthetic hand was in an anatomically plausible orientation. To investigate whether the illusion was diminished at 90 degrees (and beyond) by anatomical implausibility rather than by misalignment, in experiment 2 hand positioning was changed. The illusion was equally strong at 0 degrees, 45 degrees, and 90 degrees, but diminished at 135 degrees despite the prosthetic hand now being in an anatomically plausible orientation. Thus the illusion is diminished with misalignment of 135 degrees, irrespective of anatomical plausibility. Having demonstrated that the illusion was equally strong with the hands aligned (0 degrees) or misaligned by 45 degrees, in experiment 3 we demonstrated that participants did not detect a 45 degrees misalignment. Large degrees of misalignment prevent a compelling experience of the self-touch illusion, and the self-touch illusion prevents detection of small degrees of misalignment.

  11. Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

    Science.gov (United States)

    Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

    2016-08-24

    Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

  12. Depression screening using the Patient Health Questionnaire-9 administered on a touch screen computer.

    Science.gov (United States)

    Fann, Jesse R; Berry, Donna L; Wolpin, Seth; Austin-Seymour, Mary; Bush, Nigel; Halpenny, Barbara; Lober, William B; McCorkle, Ruth

    2009-01-01

    To (1) evaluate the feasibility of touch screen depression screening in cancer patients using the Patient Health Questionnaire-9 (PHQ-9), (2) evaluate the construct validity of the PHQ-9 using the touch screen modality, and (3) examine the prevalence and severity of depression using this screening modality. The PHQ-9 was placed in a web-based survey within a study of the clinical impact of computerized symptom and quality of life screening. Patients in medical oncology, radiation oncology, and hematopoietic stem cell transplantation (HSCT) clinics used the program on a touch screen computer in waiting rooms prior to therapy (T1) and during therapy (T2). Responses of depressed mood or anhedonia (PHQ-2 cardinal depression symptoms) triggered additional items. PHQ-9 scores were provided to the oncology team in real time. Among 342 patients enrolled, 33 (9.6%) at T1 and 69 (20.2%) at T2 triggered the full PHQ-9 by endorsing at least one cardinal symptom. Feasibility was high, with at least 97% completing the PHQ-2 and at least 96% completing the PHQ-9 when triggered and a mean completion time of about 2 min. The PHQ-9 had good construct validity. Medical oncology patients had the highest percent of positive screens (12.9%) at T1, while HSCT patients had the highest percent (30.5%) at T2. Using this method, 21 (6.1%) at T1 and 54 (15.8%) at T2 of the total sample had moderate to severe depression. The PHQ-9 administered on a touch screen computer is feasible and provides valid depression data in a diverse cancer population. (c) 2008 John Wiley & Sons, Ltd.

  13. Radiation effects on junction field-effect transistors (JFETS), MOSFETs, and bipolar transistors, as related to SSC circuit design

    International Nuclear Information System (INIS)

    Kennedy, E.J.; Alley, G.T.; Britton, C.L. Jr.; Skubic, P.L.; Gray, B.; Wu, A.

    1990-01-01

    Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular, at currents ≤1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad (gamma) total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier

  14. Crystalline Organic Pigment-Based Field-Effect Transistors.

    Science.gov (United States)

    Zhang, Haichang; Deng, Ruonan; Wang, Jing; Li, Xiang; Chen, Yu-Ming; Liu, Kewei; Taubert, Clinton J; Cheng, Stephen Z D; Zhu, Yu

    2017-07-05

    Three conjugated pigment molecules with fused hydrogen bonds, 3,7-diphenylpyrrolo[2,3-f]indole-2,6(1H,5H)-dione (BDP), (E)-6,6'-dibromo-[3,3'-biindolinylidene]-2,2'-dione (IIDG), and 3,6-di(thiophen-2-yl)-2,5-dihydropyrrolo-[3,4-c]pyrrole-1,4-dione (TDPP), were studied in this work. The insoluble pigment molecules were functionalized with tert-butoxylcarbonyl (t-Boc) groups to form soluble pigment precursors (BDP-Boc, IIDG-Boc, and TDPP-Boc) with latent hydrogen bonding. The single crystals of soluble pigment precursors were obtained. Upon simple thermal annealing, the t-Boc groups were removed and the soluble pigment precursor molecules with latent hydrogen bonding were converted into the original pigment molecules with fused hydrogen bonding. Structural analysis indicated that the highly crystalline soluble precursors were directly converted into highly crystalline insoluble pigments, which are usually only achievable by gas-phase routes like physical vapor transport. The distinct crystal structure after the thermal annealing treatment suggests that fused hydrogen bonding is pivotal for the rearrangement of molecules to form a new crystal in solid state, which leads to over 2 orders of magnitude enhancement in charge mobility in organic field-effect transistor (OFET) devices. This work demonstrated that crystalline OFET devices with insoluble pigment molecules can be fabricated by their soluble precursors. The results indicated that a variety of commercially available conjugated pigments could be potential active materials for high-performance OFETs.

  15. GaN transistors for efficient power conversion

    CERN Document Server

    Lidow, Alex; de Rooij, Michael; Reusch, David

    2014-01-01

    The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

  16. Self-aligned top-gate InGaZnO thin film transistors using SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Wong, Man; Kwok, Hoi Sing

    2013-12-02

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) utilizing SiO{sub 2}/Al{sub 2}O{sub 3} stack thin films as gate dielectric are developed in this paper. Due to high quality of the high-k Al{sub 2}O{sub 3} and good interface between active layer and gate dielectric, the resulting a-IGZO TFT exhibits good electrical performance including field-effect mobility of 9 cm{sup 2}/Vs, threshold voltage of 2.2 V, subthreshold swing of 0.2 V/decade, and on/off current ratio of 1 × 10{sup 7}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric is proposed. • The source/drain areas are hydrogen-doped by CHF{sub 3} plasma. • The devices show good electrical performance and scaling down behavior.

  17. "Atypical touch perception in MTS may derive from an abnormally plastic self-representation".

    Science.gov (United States)

    Bufalari, Ilaria; Porciello, Giuseppina; Aglioti, Salvatore Maria

    2015-01-01

    Mirror Touch Synesthetes (MTSs) feel touch while they observe others being touched. According to the authors, two complementary theoretical frameworks, the Threshold Theory and the Self-Other Theory, explain Mirror Touch Synesthesia (MTS). Based on the behavioral evidence that in MTSs the mere observation of touch is sufficient to elicit self-other merging (i.e., self-representation changes), a condition that in non-MTSs just elicits self-other sharing (i.e., mirroring activity without self-other blurring), and on the rTPJ anatomical alterations in MTS, we argue that MTS may derive from an abnormally plastic self-representation and atypical multisensory integrative mechanisms.

  18. Application of the Johnson criteria to graphene transistors

    International Nuclear Information System (INIS)

    Kelly, M J

    2013-01-01

    For 60 years, the Johnson criteria have guided the development of materials and the materials choices for field-effect and bipolar transistor technology. Intrinsic graphene is a semi-metal, precluding transistor applications, but only under lateral bias is a gap opened and transistor action possible. This first application of the Johnson criteria to biased graphene suggests that this material will struggle to ever achieve competitive commercial applications. (fast track communication)

  19. Low-threshold amplitude discriminator circuit with tunnel diode and two transistors in differential connection

    International Nuclear Information System (INIS)

    Ryba, J.; Volny, J.

    1973-01-01

    The connection is designed of a low-threshold amplitude discriminator and a tunnel diode with two transistors in differential connection. The discriminator is by its simple connection, its low consumption and high temperature stability suitable especially for portable radiation detectors. The tunnel diode is connected by one pole to a collector clamp and by the other to the supply voltage. A suitable resistor is connected in parallel with the tunnel diode to meet demands for higher sensitivity. (Z.S.)

  20. Transistor properties of exfoliated single crystals of 2 H -Mo (Se1-xT ex ) 2(0 ≤x ≤1 )

    Science.gov (United States)

    Uesugi, Eri; Miao, Xiao; Ota, Hiromi; Goto, Hidenori; Kubozono, Yoshihiro

    2017-06-01

    Field-effect transistors (FETs) were fabricated using exfoliated single crystals of Mo (Se1-xT ex) 2 with an x range of 0 to 1, and the transistor properties fully investigated at 295 K in four-terminal measurement mode. The chemical composition and crystal structure of exfoliated single crystals were identified by energy-dispersive x-ray spectroscopy (EDX), single-crystal x-ray diffraction, and Raman scattering, suggesting the 2 H - structure in all Mo (Se1-xT ex) 2 . The lattice constants of a and c increase monotonically with increasing x , indicating the substitution of Se by Te. When x 0.4 . In contrast, the polarity of a thick single-crystal Mo (Se1-xT ex) 2 FET did not change despite an increase in x . The change of polarity in a thin single-crystal FET was well explained by the variation of electronic structure. The absence of such change in the thick single-crystal FET can be reasonably interpreted based on the large bulk conduction due to naturally accumulated electrons. The μ value in the thin single-crystal FET showed a parabolic variation, with a minimum μ at around x =0.4 , which probably originates from the disorder of the single crystal caused by the partial replacement of Se by Te, i.e., a disorder that may be due to ionic size difference of Se and Te.