Investigation on thermal oxidative aging of nitrile rubber (NBR) O-rings under compression stress

Science.gov (United States)

Liu, X. R.; Zhang, W. F.; Lou, W. T.; Huang, Y. X.; Dai, W.

2017-11-01

The degradation behaviors of nitrile rubber O-rings exposure to air under compression were investigated at three elevated temperatures. The physical and mechanical properties of the aging samples before and after exposure at selected time were studied by measuring weight loss, tensile strength and elongation at break. The Attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy and fracture morphology were used to reveal the microstructural changes of the aging samples. The results indicate that the weight decreased with exposure time and temperature. Based on the results of the crosslinking density, the crosslinking predominates during the most of aging process. The significant changes in tensile strength and elongation at break also indicate the severe degradation in air. The fracture morphology results show that the fracture surface after 64 days of exposure to air turns rough and present defects. The ATR-FTIR results demonstrate that the hydroxyl groups were formed for the samples aged in air.

Eleventh interim status report: Model 9975 O-Ring fixture long-term leak performance

Energy Technology Data Exchange (ETDEWEB)

Daugherty, W. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

2016-08-01

A series of experiments to monitor the aging performance of Viton® GLT O-rings used in the Model 9975 package has been ongoing since 2004 at the Savannah River National Laboratory. One approach has been to periodically evaluate the leak performance of O-rings being aged in mock-up 9975 Primary Containment Vessels (PCVs) at elevated temperature. Other methods such as compression-stress relaxation (CSR) tests and field surveillance are also on-going to evaluate O-ring behavior. Seventy tests using PCV mock-ups were assembled and heated to temperatures ranging from 200 to 450 ºF. They were leak-tested initially and have been tested periodically to determine if they continue to meet the leak-tightness criterion defined in ANSI standard N14.5-97. Due to material substitution, fourteen additional tests were initiated in 2008 with GLT-S O-rings heated to temperatures ranging from 200 to 400 ºF.

Application of quantum-dot multi-wavelength lasers and silicon photonic ring resonators to data-center optical interconnects

Science.gov (United States)

Beckett, Douglas J. S.; Hickey, Ryan; Logan, Dylan F.; Knights, Andrew P.; Chen, Rong; Cao, Bin; Wheeldon, Jeffery F.

2018-02-01

Quantum dot comb sources integrated with silicon photonic ring-resonator filters and modulators enable the realization of optical sub-components and modules for both inter- and intra-data-center applications. Low-noise, multi-wavelength, single-chip, laser sources, PAM4 modulation and direct detection allow a practical, scalable, architecture for applications beyond 400 Gb/s. Multi-wavelength, single-chip light sources are essential for reducing power dissipation, space and cost, while silicon photonic ring resonators offer high-performance with space and power efficiency.

Safety of a silicone elastomer vaginal ring as potential microbicide delivery method in African women: A Phase 1 randomized trial.

Science.gov (United States)

Nel, Annaléne; Martins, Janine; Bekker, Linda-Gail; Ramjee, Gita; Masenga, Gileard; Rees, Helen; van Niekerk, Neliëtte

2018-01-01

Women in sub-Saharan Africa are in urgent need of female-initiated human immunodeficiency virus (HIV) preventative methods. Vaginal rings are one dosage form in development for delivery of HIV microbicides. However, African women have limited experience with vaginal rings. This Phase I, randomized, crossover trial assessed and compared the safety, acceptability and adherence of a silicone elastomer placebo vaginal ring, intended as a microbicide delivery method, inserted for a 12-week period in healthy, HIV-negative, sexually active women in South Africa and Tanzania. 170 women, aged 18 to 35 years were enrolled with 88 women randomized to Group A, using a placebo vaginal ring for 12 weeks followed by a 12-week safety observation period. 82 women were randomized to Group B and observed for safety first, followed by a placebo vaginal ring for 12 weeks. Safety was assessed by clinical laboratory assessments, pelvic/colposcopy examinations and adverse events. Possible carry-over effect was addressed by ensuring no signs or symptoms of genital irritation at crossover. No safety concerns were identified for any safety variables assessed during the trial. No serious adverse events were reported considered related to the placebo vaginal ring. Vaginal candidiasis was the most common adverse event occurring in 11% of participants during each trial period. Vaginal discharge (2%), vaginal odour (2%), and bacterial vaginitis (2%) were assessed as possibly or probably related to the vaginal ring. Thirty-four percent of participants had sexually transmitted infections (STIs) at screening, compared to 12% of participants who tested positive for STIs at crossover and the final trial visit. Three participants (2%) tested HIV positive during the trial. The silicone elastomer vaginal ring had no safety concerns, demonstrating a profile favorable for further development for topical release of antiretroviral-based microbicides.

UV laser ablation of silicon carbide ring surfaces for mechanical seal applications

Science.gov (United States)

Daurelio, Giuseppe; Bellosi, Alida; Sciti, Diletta; Chita, Giuseppe; Allegretti, Didio; Guerrini, Fausto

2000-02-01

Silicon carbide ceramic seal rings are treated by KrF excimer laser irradiation. Surface characteristics, induced by laser treatment, depend upon laser fluence, the number of laser pulses, their energy and frequency, the rotation rate of the ring and the processing atmosphere. It was ascertained that silicon carbide has to be processed under an inert atmosphere to avoid surface oxidation. Microstructural analyses of surface and cross section of the laser processed samples showed that the SiC surface is covered by a scale due to the melting/resolidification processes. At high fluence there are no continuous scales on the surfaces; materials is removed by decomposition/vaporization and the ablation depth is linearly dependent on the number of pulses. Different surface morphologies are observed. The evolution of surface morphology and roughness is discussed with reference to compositions, microstructure and physical and optical properties of the ceramic material and to laser processing parameters. Preliminary results on tribological behavior of the treated seals are reported.

Compact high-efficiency vortex beam emitter based on a silicon photonics micro-ring

DEFF Research Database (Denmark)

Li, Shimao; Ding, Yunhong; Guan, Xiaowei

2018-01-01

Photonic integrated devices that emit vortex beam carrying orbital angular momentum are becoming key components for multiple applications. Here we propose and demonstrate a high-efficiency vortex beam emitter based on a silicon micro-ring resonator integrated with a metal mirror. Such a compact...

Long-Term Leak Tightness Of O-Ring Seals In The 9975 Shipping Package

International Nuclear Information System (INIS)

Hoffman, E.; Skidmore, E.; Daugherty, W.

2010-01-01

O-ring seals in the 9975 shipping package containment vessels are fabricated from a Viton GLT or GLT-S compound. Long-term testing of these O-rings has been performed to support service life predictions for packages used for long-term storage. Since the only criterion for O-ring performance is to maintain a leak-tight seal, leak testing is the primary indicator of service life. Fixtures have been aging at elevated temperatures to provide data for service life predictions. Limited leak test failures have been observed at the higher temperatures. This provides the opportunity for comparison to trends based on other O-ring properties, such as compression stress relaxation. Initial data suggest that the CSR data have some predictive value for a leak-tight service life, but other factors can complicate efforts to draw definitive conclusions.

O-Ring sealing arrangements for ultra-high vacuum systems

Science.gov (United States)

Kim, Chang-Kyo; Flaherty, Robert

1981-01-01

An all metal reusable O-ring sealing arrangement for sealing two concentric tubes in an ultra-high vacuum system. An O-ring of a heat recoverable alloy such as Nitinol is concentrically positioned between protruding sealing rings of the concentric tubes. The O-ring is installed between the tubes while in a stressed martensitic state and is made to undergo a thermally induced transformation to an austenitic state. During the transformation the O-ring expands outwardly and contracts inwardly toward a previously sized austenitic configuration, thereby sealing against the protruding sealing rings of the concentric tubes.

Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

Science.gov (United States)

Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

2007-05-28

We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

Composite correlation filter for O-ring detection in stationary colored noise

Science.gov (United States)

Hassebrook, Laurence G.

2009-04-01

O-rings are regularly replaced in aircraft and if they are not replaced or if they are installed improperly, they can result in catastrophic failure of the aircraft. It is critical that the o-rings be packaged correctly to avoid mistakes made by technicians during routine maintenance. For this reason, fines may be imposed on the o-ring manufacturer if the o-rings are packaged incorrectly. That is, a single o-ring must be packaged and labeled properly. No o-rings or more than one o-ring per package is not acceptable. We present an industrial inspection system based on real-time composite correlation filtering that has successfully solved this problem in spite of opaque paper o-ring packages. We present the system design including the composite filter design.

Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

KAUST Repository

Yang, Xiaoming

2014-10-01

This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

KAUST Repository

Yang, Xiaoming; Zhong, Zhaowei; Diallo, Elhadj; Wang, Zhihong; Yue, Weisheng

2014-01-01

This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

Tree-ring C-H-O isotope variability and sampling

International Nuclear Information System (INIS)

Leavitt, Steven W.

2010-01-01

In light of the proliferation of tree-ring isotope studies, the magnitude and cause of variability of tree-ring δ 13 C, δ 18 O and δ 2 H within individual trees (circumferential) and among trees at a site is examined in reference to field and laboratory sampling requirements and strategies. Within this framework, this paper provides a state-of-knowledge summary of the influence of 'juvenile' isotope effects, ageing effects, and genetic effects, as well as the interchangeability of species, choice of ring segment to analyze (whole ring, earlywood or latewood), and the option of sample pooling. The range of isotopic composition of the same ring among trees at a site is ca. 1-3 per mille for δ 13 C, 1-4 per mille δ 18 O, and 5-30 per mille for δ 2 H, whereas the circumferential variability within a tree is lower. A standard prescription for sampling and analysis does not exist because of differences in field environmental circumstances and mixed findings represented in relevant published literature. Decisions in this regard will usually be tightly constrained by goals of the study and project resources. Sampling 4-6 trees at a site while avoiding juvenile effects in rings near the pith seems to be the most commonly used methodology, and although there are some reasoned arguments for analyzing only latewood and developing separate isotope records from each tree, the existence of some contradictory findings together with efforts to reduce cost and effort have prompted alternate strategies (e.g., most years pooled with occasional analysis of rings in the sequence separately for each tree) that have produced useful results in many studies.

Research on degradation of vacuum O-rings under gamma radiation

CERN Document Server

Ino, H; Saitô, Y; Kubo, T; Kinsho, M

2003-01-01

The high-intensity proton accelerator being constructed by JAERI and KEK will generates greater beam power than conventional accelerators. The radiation emission due to beam losses will therefore increase. Since vacuum O-rings installed in the accelerator will be degraded badly by the radiation, there is need to find an O-ring that has more resistant to radiation. To find an O-ring that has better radiation resistant than that of the fluororubber used for conventional accelerators in general, some O-rings which are expected to have enough resistant to the radiation were irradiated, and estimated a degradation by measurement of outgassing rate, hardness, permeation time of helium gas, and an outward observation. Most of the O-rings were irradiated in an oxygen free atmosphere and in the air. The irradiations were carried out at room temperature in Co-60 gamma irradiation facility until a dose of 1 MGy was reached. The radiation resistance of PURE-RUBBER O-ring showed somewhat better than that of the fluororubb...

Packing Polymorphism of Dapivirine and Its Impact on the Performance of a Dapivirine-Releasing Silicone Elastomer Vaginal Ring.

Science.gov (United States)

McCoy, Clare F; Murphy, Diarmaid J; Boyd, Peter; Derrick, Tiffany; Spence, Patrick; Devlin, Brid; Malcolm, R Karl

2017-08-01

A silicone elastomer vaginal ring providing sustained release over 28 days of the anti-retroviral microbicide dapivirine has recently completed phase III clinical testing and showed moderate protection against HIV acquisition. In support of the product licensure program, we report the impact of dapivirine packing polymorphism on the thermal and solubility characteristics of dapivirine and on the in vitro performance of the 25 mg dapivirine ring product. This is the first time that polymorphism has been reported for a drug-releasing vaginal ring product. Thermal, particle size, powder X-ray diffraction, and thermodynamic solubility analyses of dapivirine polymorphic forms I and IV, both of which are persistent at room temperature and with form I being the thermodynamically stable form, were conducted for both micronized and non-micronized materials. No significant differences in solubility between DPV forms I and IV were observed in media commonly used for in vitro release testing. Matrix-type silicone elastomer vaginal rings were manufactured and the impact of dapivirine polymorphism on key in vitro parameters (compression and tensile behavior; content assay; in vitro release; residual content assay) was investigated. The data demonstrate that dapivirine packing polymorphism has no significant impact on in vitro performance of the 25 mg dapivirine vaginal ring. Copyright © 2017 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

Science.gov (United States)

Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

2012-12-03

We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

Packing polymorphism of dapivirine and its impact on the performance of a dapivirine-releasing silicone elastomer vaginal ring

OpenAIRE

McCoy, Clare F.; Murphy, Diarmaid J.; Boyd, Peter; Derrick, Tiffany; Spence, Patrick; Devlin, Brid; Malcolm, Robert

2017-01-01

A silicone elastomer vaginal ring providing sustained release over 28 days of the antiretroviral microbicide dapivirine has recently completed Phase III clinical testing and showed moderate protection against HIV acquisition. In support of the product licensure program, we report the impact of dapivirine packing polymorphism on the thermal and solubility characteristics of dapivirine and on the in vitro performance of the 25 mg dapivirine ring product. This is the first time that polymorphism...

All-optically tunable waveform synthesis by a silicon nanowaveguide ring resonator coupled with a photonic-crystal fiber frequency shifter

KAUST Repository

Savvin, Aleksandr D.

2011-03-01

A silicon nanowaveguide ring resonator is combined with a photonic-crystal fiber (PCF) frequency shifter to demonstrate an all-optically tunable synthesis of ultrashort pulse trains, modulated by ultrafast photoinduced free-carrier generation in the silicon resonator. Pump-probe measurements performed with a 50-fs, 625-nm second-harmonic output of a Cr:forsterite laser, used as a carrier-injecting pump, and a 1.50-1.56-μm frequency-tunable 100-fs soliton output of a photonic-crystal fiber, serving as a probe, resolve tunable ultrafast oscillatory features in the silicon nanowaveguide resonator response. © 2010 Elsevier B.V. All rights reserved.

All-optically tunable waveform synthesis by a silicon nanowaveguide ring resonator coupled with a photonic-crystal fiber frequency shifter

KAUST Repository

Savvin, Aleksandr D.; Melnikov, Vasily; Fedotov, Il'ya V.; Fedotov, Andrei B.; Perova, Tatiana S.; Zheltikov, Aleksei M.

2011-01-01

A silicon nanowaveguide ring resonator is combined with a photonic-crystal fiber (PCF) frequency shifter to demonstrate an all-optically tunable synthesis of ultrashort pulse trains, modulated by ultrafast photoinduced free-carrier generation in the silicon resonator. Pump-probe measurements performed with a 50-fs, 625-nm second-harmonic output of a Cr:forsterite laser, used as a carrier-injecting pump, and a 1.50-1.56-μm frequency-tunable 100-fs soliton output of a photonic-crystal fiber, serving as a probe, resolve tunable ultrafast oscillatory features in the silicon nanowaveguide resonator response. © 2010 Elsevier B.V. All rights reserved.

Performance of integrated retainer rings in silicon micro-turbines with thrust style micro-ball bearings

International Nuclear Information System (INIS)

Hergert, Robert J; Holmes, Andrew S; Hanrahan, Brendan; Ghodssi, Reza

2013-01-01

This work explores the performance of different silicon retainer ring designs when integrated into silicon micro-turbines (SMTs) incorporating thrust style bearings supported on 500 µm diameter steel balls. Experimental performance curves are presented for SMTs with rotor diameters of 5 mm and 10 mm, each with five different retainer designs varying in mechanical rigidity, ball pocket shape and ball complement. It was found that the different retainer designs yielded different performance curves, with the closed pocket designs consistently requiring lower input power for a given rotation speed, and the most rigid retainers giving the best performance overall. Both 5 mm and 10 mm diameter devices have shown repeatable performance at rotation speeds up to and exceeding 20 000 RPM with input power levels below 2 W, and devices were tested for over 2.5 million revolutions without failure. Retainer rings are commonly used in macro-scale bearings to ensure uniform spacing between the rolling elements. The integration of retainers into micro-bearings could lower costs by reducing the number of balls required for stable operation, and also open up the possibility of ‘smart’ bearings with integrated sensors to monitor the bearing status. (paper)

Electrochemical characteristics of porous TiO2 encapsulated silicon anode

International Nuclear Information System (INIS)

Jeon, Bup Ju; Lee, Joong Kee

2011-01-01

Graphical abstract: Cycling performances of the TiO 2 coated silicon anode at different catalyst pH values. Display Omitted Highlights: → TiO 2 coated silicon was used as the anode material for lithium batteries. → TiO 2 layer acted as a buffer layer for reducing the volume expansion. → Pore size distribution of TiO 2 coated silicon influenced discharge capacity. → Higher capacity retention was exhibited at pH 10.7. - Abstract: TiO 2 coated silicon, which was prepared by the modified sol-gel method, was employed as the anode material for lithium secondary batteries and the relationship between the diffusivity and electrochemical characteristics was investigated. The results showed that the physical properties of the samples, such as their diffusivity and pore size distribution, enhanced the cycling efficiency of the TiO 2 coated silicon, probably due to the reduction of the side reactions, which may be closely related to the pore size distribution of the TiO 2 coating layer. The pore size of the coating layer plays an important role in retarding the lithium ion diffusion. In the experimental range studied herein, higher capacity retention was exhibited for the TiO 2 coated silicon prepared at pH 10.7.

A Study for Shelf Life Evaluation of Rubber O-ring

International Nuclear Information System (INIS)

Jung, Sun Chul; Kim, Jong Seog

2005-01-01

Non-metallic materials stored in warehouses in nuclear power plants have shelf life. The shelf life means the maximum storage time allowable such that the install life of the material is not affected. Materials whose shelf lives expire are generally discarded. unless the shelf lives of these materials can be extended by reducing the install life. Examples of this case are rubber materials. Rubber materials are widely used for sealing of various machines. There are various life evaluation methods for rubber material. For example, the compression set is generally used for evaluation the aging condition of rubber materials used for sealing. A compression set value can be calculated according to the ASTM D395. We have tried the compression set test by using specimens with 6.99mm diameter O-ring even when ASTM D 395 recommends the use of bar specimen. Test results and comparison between O-ring and reference data of EPRI NP-6608 are presented below

Micro-discharge noise and radiation damage of silicon microstrip sensors

International Nuclear Information System (INIS)

Ohsugi, T.; Iwata, Y.; Ohyama, H.; Ohmoto, T.; Yoshikawa, M.; Handa, T.; Kurino, K.; Fujita, K.; Kitabayashi, H.; Tamura, N.; Hatakenaka, T.; Maeohmichi, M.; Takahata, M.; Nakao, M.; Iwasaki, H.; Kohriki, T.; Terada, S.; Unno, Y.; Takashima, R.; Yamamoto, K.; Yamamura, K.

1996-01-01

We have examined experimentally some existing ideas for improving the radiation hardness of silicon microstrip sensors. We confirm that the extended electrode and the deep implant-strip proposed on the basis of simulation studies works effectively to suppress micro-discharge as well as junction breakdown of the bias or guard ring. For an integrated coupling capacitor a double layer structure of SiO 2 and Si 3 N 4 provides better radiation hardness than that of single SiO 2 coupling in our design conditions. The onset voltage of the micro-discharge on the bias/guard ring has been studied for an extended electrode and a floating guard ring. (orig.)

Helium and deuterium permeability in O-rings

International Nuclear Information System (INIS)

Lakner, J.F.

1976-01-01

To obtain more information on gas permeation through elastomeric O-rings, studies were performed on Parker Seal Company O-rings, Nos. 2-113, 2-006, 3-904, and 3-906, all made of a nitrile rubber. Also included in the tests was a valve packing (Autoclave Engineers) encased in AE Valve 20A-2142. Permeation experiments were run usually in duplicate to 82.7 MPa (12,000 psi) with helium and deuterium at room temperature. The data are extrapolated to give values for tritium

Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

Directory of Open Access Journals (Sweden)

Kyosuke Seya

2015-01-01

Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

Silicon Alleviates Nonalcoholic Steatohepatitis by Reducing Apoptosis in Aged Wistar Rats Fed a High-Saturated Fat, High-Cholesterol Diet.

Science.gov (United States)

Garcimartín, Alba; López-Oliva, M Elvira; Sántos-López, Jorge A; García-Fernández, Rosa A; Macho-González, Adrián; Bastida, Sara; Benedí, Juana; Sánchez-Muniz, Francisco J

2017-06-01

Background: Lipoapoptosis has been identified as a key event in the progression of nonalcoholic fatty liver disease (NAFLD), and hence, antiapoptotic agents have been recommended as a possible effective treatment for nonalcoholic steatohepatitis (NASH). Silicon, included in meat as a functional ingredient, improves lipoprotein profiles and liver antioxidant defenses in aged rats fed a high-saturated fat, high-cholesterol diet (HSHCD). However, to our knowledge, the antiapoptotic effect of this potential functional meat on the liver has never been tested. Objective: This study was designed to evaluate the effect of silicon on NASH development and the potential antiapoptotic properties of silicon in aged rats. Methods: One-year-old male Wistar rats weighing ∼500 g were fed 3 experimental diets containing restructured pork (RP) for 8 wk: 1 ) a high-saturated fat diet, as an NAFLD control, with 16.9% total fat, 0.14 g cholesterol/kg diet, and 46.8 mg SiO 2 /kg (control); 2 ) the HSHCD as a model of NASH, with 16.6% total fat, 16.3 g cholesterol/kg diet, and 46.8 mg SiO 2 /kg [high-cholesterol diet (Chol-C)]; and 3 ) the HSHCD with silicon-supplemented RP with amounts of fat and cholesterol identical to those in the Chol-C diet, but with 750 mg SiO 2 /kg (Chol-Si). Detailed histopathological assessments were performed, and the NAFLD activity score (NAS) was calculated. Liver apoptosis and damage markers were evaluated by Western blotting and immunohistochemical staining. Results: Chol-C rats had a higher mean NAS (7.4) than did control rats (1.9; P silicon substantially affects NASH development in aged male Wistar rats fed an HSHCD by partially blocking apoptosis. These results suggest that silicon-enriched RP could be used as an effective nutritional strategy in preventing NASH. © 2017 American Society for Nutrition.

Contact mechanical analysis of O-ring stresses

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyung Kyu

2007-02-15

The purpose of this project is to develop the approximate solutions of contact traction and internal stress of an O-ring by using a two dimensional elasticity for enhancing the design and failure prediction technology. Investigated were the applicability of Lindley's formulae of contact force prediction and the Hertz theory. Three cases of O-ring installation were considered. The approximate solution of contact tractions and internal stresses of each case were derived. The key results are summarized as follows: 1. It is verified that Lindley's formulae predicts the relationship between the fractional compression and contact force. 2. In the case of Case I, II and III without internal pressure, it is found that a function form of the contact traction is the Hertzian. So it is possible to express the traction with a Hertzian form and correction factors. 3. The internal stresses are derived in the case of the Hertzian traction profile. The stresses at the center of O-ring show a satisfactory result when compared with the finite element result.

An integrated optic ethanol vapor sensor based on a silicon-on-insulator microring resonator coated with a porous ZnO film.

Science.gov (United States)

Yebo, Nebiyu A; Lommens, Petra; Hens, Zeger; Baets, Roel

2010-05-24

Optical structures fabricated on silicon-on-insulator technology provide a convenient platform for the implementation of highly compact, versatile and low cost devices. In this work, we demonstrate the promise of this technology for integrated low power and low cost optical gas sensing. A room temperature ethanol vapor sensor is demonstrated using a ZnO nanoparticle film as a coating on an SOI micro-ring resonator of 5 microm in radius. The local coating on the ring resonators is prepared from colloidal suspensions of ZnO nanoparticles of around 3 nm diameter. The porous nature of the coating provides a large surface area for gas adsorption. The ZnO refractive index change upon vapor adsorption shifts the microring resonance through evanescent field interaction. Ethanol vapor concentrations down to 100 ppm are detected with this sensing configuration and a detection limit below 25 ppm is estimated.

Silicon (100)/SiO2 by XPS

Energy Technology Data Exchange (ETDEWEB)

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-25

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

Properties of tree rings in LSST sensors

International Nuclear Information System (INIS)

Park, H.Y.; Tsybychev, D.; Nomerotski, A.

2017-01-01

Images of uniformly illuminated sensors for the Large Synoptic Survey Telescope have circular periodic patterns with an appearance similar to tree rings. These patterns are caused by circularly symmetric variations of the dopant concentration in the monocrystal silicon boule induced by the manufacturing process. Non-uniform charge density results in the parasitic electric field inside the silicon sensor, which may distort shapes of astronomical sources. In this study we analyzed data from fifteen LSST sensors produced by ITL to determine the main parameters of the tree rings: amplitude and period, and also variability across the sensors tested at Brookhaven National Laboratory. Tree ring pattern has a weak dependence on the wavelength. However the ring amplitude gets smaller as wavelength gets longer, since longer wavelengths penetrate deeper into the silicon. Tree ring amplitude gets larger as it gets closer to the outer part of the wafer, from 0.1 to 1.0%, indicating that the resistivity variation is larger for larger radii.

A silicone elastomer vaginal ring for HIV prevention containing two microbicides with different mechanisms of action.

Science.gov (United States)

Fetherston, Susan M; Boyd, Peter; McCoy, Clare F; McBride, Marcella C; Edwards, Karen-Leigh; Ampofo, Stephen; Malcolm, R Karl

2013-02-14

Vaginal rings are currently being developed for the long-term (at least 30 days) continuous delivery of microbicides against human immunodeficiency virus (HIV). Research to date has mostly focused on devices containing a single antiretroviral compound, exemplified by the 25mg dapivirine ring currently being evaluated in a Phase III clinical study. However, there is a strong clinical rationale for combining antiretrovirals with different mechanisms of action in a bid to increase breadth of protection and limit the emergence of resistant strains. Here we report the development of a combination antiretroviral silicone elastomer matrix-type vaginal ring for simultaneous controlled release of dapivirine, a non-nucleoside reverse transcriptase inhibitor, and maraviroc, a CCR5-targeted HIV-1 entry inhibitor. Vaginal rings loaded with 25mg dapivirine and various quantities of maraviroc (50-400mg) were manufactured and in vitro release assessed. The 25mg dapivirine and 100mg maraviroc formulation was selected for further study. A 24-month pharmaceutical stability evaluation was conducted, indicating good product stability in terms of in vitro release, content assay, mechanical properties and related substances. This combination ring product has now progressed to Phase I clinical testing. Copyright © 2012 Elsevier B.V. All rights reserved.

Characterization of nanostructured CuO-porous silicon matrixformed on copper coated silicon substrate via electrochemical etching

International Nuclear Information System (INIS)

Naddaf, M.; Mrad, O.; Al-Zier, A.

2015-01-01

A pulsed anodic etching method has been utilized for nanostructuring of a copper-coated p-type (100) silicon substrate, using HF-based solution as electrolyte. Scanning electron microscopy reveals the formation of a nanostructured matrix that consists of island-like textures with nanosize grains grown onto fiber-like columnar structures separated with etch pits of grooved porous structures. Spatial micro-Raman scattering analysis indicates that the island-like texture is composed of single-phase cupric oxide (CuO) nanocrystals, while the grooved porous structure is barely related to formation of porous silicon (PS). X-ray diffraction shows that both the grown CuO nanostructures and the etched silicon layer have the same preferred (220) orientation. Chemical composition obtained by means of X-ray photoelectron spectroscopic (XPS) analysis confirms the presence of the single-phase CuO on the surface of the patterned CuO-PS matrix. As compared to PS formed on the bare silicon substrate, the room-temperature photoluminescence (PL) from the CuO-PS matrix exhibits an additional weak (blue) PL band as well as a blue shift in the PL band of PS (S-band). This has been revealed from XPS analysis to be associated with the enhancement in the SiO2 content as well as formation of the carbonyl group on the surface in the case of the CuO-PS matrix.(author)

Irregular Aharonov–Bohm effect for interacting electrons in a ZnO quantum ring

International Nuclear Information System (INIS)

Chakraborty, Tapash; Manaselyan, Aram; Barseghyan, Manuk

2017-01-01

The electronic states and optical transitions of a ZnO quantum ring containing few interacting electrons in an applied magnetic field are found to be very different from those in a conventional semiconductor system, such as a GaAs ring. The strong Zeeman interaction and the Coulomb interaction of the ZnO system, two important characteristics of the electron system in ZnO, exert a profound influence on the electron states and on the optical properties of the ring. In particular, our results indicate that the Aharonov–Bohm (AB) effect in a ZnO quantum ring strongly depends on the electron number. In fact, for two electrons in the ZnO ring, the AB oscillations become aperiodic, while for three electrons (interacting) the AB oscillations completely disappear. Therefore, unlike in conventional quantum ring topology, here the AB effect (and the resulting persistent current) can be controlled by varying the electron number. (paper)

Comparing Sources of Storm-Time Ring Current O+

Science.gov (United States)

Kistler, L. M.

2015-12-01

The first observations of the storm-time ring current composition using AMPTE/CCE data showed that the O+ contribution to the ring current increases significantly during storms. The ring current is predominantly formed from inward transport of the near-earth plasma sheet. Thus the increase of O+ in the ring current implies that the ionospheric contribution to the plasma sheet has increased. The ionospheric plasma that reaches the plasma sheet can come from both the cusp and the nightside aurora. The cusp outflow moves through the lobe and enters the plasma sheet through reconnection at the near-earth neutral line. The nightside auroral outflow has direct access to nightside plasma sheet. Using data from Cluster and the Van Allen Probes spacecraft, we compare the development of storms in cases where there is a clear input of nightside auroral outflow, and in cases where there is a significant cusp input. We find that the cusp input, which enters the tail at ~15-20 Re becomes isotropized when it crosses the neutral sheet, and becomes part of the hot (>1 keV) plasma sheet population as it convects inward. The auroral outflow, which enters the plasma sheet closer to the earth, where the radius of curvature of the field line is larger, does not isotropize or become significantly energized, but remains a predominantly field aligned low energy population in the inner magnetosphere. It is the hot plasma sheet population that gets accelerated to high enough energies in the inner magnetosphere to contribute strongly to the ring current pressure. Thus it appears that O+ that enters the plasma sheet further down the tail has a greater impact on the storm-time ring current than ions that enter closer to the earth.

A study on the method for estimating the life time of O-rings made of NBR used in sealing air operating cylinders

International Nuclear Information System (INIS)

Fujii, Yuzo; Mitsuta, Yasumasa

2003-01-01

At nuclear power plants, a large number of O-rings made of rubber are attached to safety related machines and apparatus for sealing two metallic components. O-rings degrade during the long term exposure in environmental conditions in use, and finally lose the requested functions. Therefore it is important to exchange them in a proper period based on the precise life time estimation. This study aimed at to investigate the method for estimating the life time of O-rings made of NBR (acrylonitrile butadiene rubber) attached to the air cylinders which drive the dampers of ventilation systems in nuclear power plants. It has been conducted as follows: (1) After confirming that the main cause of degradation of O-rings is thermo-oxidation reaction, thermally accelerated aging tests were carried out for O-rings with three different temperatures. (2) It was certified that the elongation values of O-rings obtained by the tests could be fitted by the Arrhenius rule, and then the life time of O-rings was estimated using the Arrhenius rule. (3) In order to validate the reliability of this estimation, we measured the elongation values of the O-rings which had been actually used at nuclear power plants, and compared them to the predicted elongation values obtained by the above estimation. The average and standard deviation of the values which is calculated by the equation {(measured value-predicted value)/ predicted value} are 11% and 8%, respectively and there are small errors between the measured value and the predicted values. As a result we can judge that good estimation of life time of O-rings can be done by the above method. (author)

Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

Science.gov (United States)

Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

2014-02-15

We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

Formation and properties of porous silicon layers

International Nuclear Information System (INIS)

Vitanov, P.; Kamenova, M.; Dimova-Malinovska, D.

1993-01-01

Preparation, properties and application of porous silicon films are investigated. Porous silicon structures were formed by an electrochemical etching process resulting in selective dissolution of the silicon substrate. The silicon wafers used with a resistivity of 5-10Ω.cm were doped with B to concentrations 6x10 18 -1x10 19 Ω.cm -3 in the temperature region 950 o C-1050 o C. The density of each porous films was determined from the weight loss during the anodization and it depends on the surface resistivity of the Si wafer. The density decreases with decreasing of the surface resistivity. The surface of the porous silicon layers was studied by X-ray photoelectron spectroscopy which indicates the presence of SiF 4 . The kinetic dependence of the anode potential and the porous layer thickness on the time of anodization in a galvanostatic regime for the electrolytes with various HF concentration were studied. In order to compare the properties of the resulting porous layers and to establish the dependence of the porosity on the electrolyte, three types of electrolytes were used: concentrated HF, diluted HF:H 2 O=1:1 and ethanol-hydrofluoric solutions HF:C 2 H 5 OH:H 2 O=2:1:1. High quality uniform and reproducible layers were formed using aqueous-ethanol-hydrofluoric electrolyte. Both Kikuchi's line and ring patterns were observed by TEM. The porous silicon layer was single crystal with the same orientation as the substrate. The surface shows a polycrystalline structure only. The porous silicon layers exhibit visible photoluminescence (PL) at room temperature under 480 nm Ar + laser line excitation. The peak of PL was observed at about 730 nm with FWHM about 90 nm. Photodiodes was made with a W-porous silicon junction. The current voltage and capacity voltage characteristics were similar to those of an isotype heterojunction diode. (orig.)

A novel stress distribution analytical model of O-ring seals under different properties of materials

International Nuclear Information System (INIS)

Wu, Di; Wang, Shao Ping; Wang, Xing Jian

2017-01-01

The elastomeric O-ring seals have been widely used as sealing elements in hydraulic systems. The sealing performance of O-ring seals is related to stress distribution. The stresses distribution depends on the squeeze rate and internal pressure, and would vary with properties of O-ring seals materials. Thus, in order to study the sealing performance of O-ring seals, it is necessary to describe the analytic relationship between stress distribution and properties of O-ring seals materials. For this purpose, a novel Stress distribution analytical model (SDAM) is proposed in this paper. The analytical model utilizes two stress complex functions to describe the stress distribution of O-ring seals. The proposed SDAM can express not only the analytical relationship between stress distribution and Young’s modulus, but also the one between stress distribution and Poisson’s ratio. Finally, compared results between finite element analysis and the SDAM validate that the proposed model can effectively reveal the stress distribution under different properties for O-ring materials

A novel stress distribution analytical model of O-ring seals under different properties of materials

Energy Technology Data Exchange (ETDEWEB)

Wu, Di; Wang, Shao Ping; Wang, Xing Jian [School of Automation Science and Electrical Engineering, Beihang University, Beijing (China)

2017-01-15

The elastomeric O-ring seals have been widely used as sealing elements in hydraulic systems. The sealing performance of O-ring seals is related to stress distribution. The stresses distribution depends on the squeeze rate and internal pressure, and would vary with properties of O-ring seals materials. Thus, in order to study the sealing performance of O-ring seals, it is necessary to describe the analytic relationship between stress distribution and properties of O-ring seals materials. For this purpose, a novel Stress distribution analytical model (SDAM) is proposed in this paper. The analytical model utilizes two stress complex functions to describe the stress distribution of O-ring seals. The proposed SDAM can express not only the analytical relationship between stress distribution and Young’s modulus, but also the one between stress distribution and Poisson’s ratio. Finally, compared results between finite element analysis and the SDAM validate that the proposed model can effectively reveal the stress distribution under different properties for O-ring materials.

Regulatory concerns for leakage testing of packagings with three O-ring closure seals

International Nuclear Information System (INIS)

Oras, J.J.; Towell, R.H.; Wangler, M.E.

1997-01-01

The American National Standard for Radioactive Materials--Leakage Tests on Packages for Shipment (ANSI N14.5) provides guidance for leakage rate testing to show that a particular packaging complies with regulatory requirements and also provides guidance in determining appropriate acceptance criteria. Recent radioactive packagings designs have incorporated three O-ring closure seals, the middle O-ring being the containment seal. These designs have the potential for false positive results of leakage rate tests. The volume between the containment O-ring and the inner O-ring is used for the helium gas required for the leakage rate tests to reduce both the amount of helium used and the time required to conduct the tests. A leak detector samples the evacuated volume between the outer O-ring and the containment O-ring. False positive results can be caused in two ways, a large leakage in the containment seal or leakage in the inner seal. This paper will describe the problem together with possible solutions/areas that need to be addressed in a Safety Analysis Report for Packagings before a particular packaging design can be certified for transport

Characterization of nanostructured CuO-porous silicon matrix formed on copper-coated silicon substrate via electrochemical etching

Science.gov (United States)

Naddaf, M.; Mrad, O.; Al-zier, A.

2014-06-01

A pulsed anodic etching method has been utilized for nanostructuring of a copper-coated p-type (100) silicon substrate, using HF-based solution as electrolyte. Scanning electron microscopy reveals the formation of a nanostructured matrix that consists of island-like textures with nanosize grains grown onto fiber-like columnar structures separated with etch pits of grooved porous structures. Spatial micro-Raman scattering analysis indicates that the island-like texture is composed of single-phase cupric oxide (CuO) nanocrystals, while the grooved porous structure is barely related to formation of porous silicon (PS). X-ray diffraction shows that both the grown CuO nanostructures and the etched silicon layer have the same preferred (220) orientation. Chemical composition obtained by means of X-ray photoelectron spectroscopic (XPS) analysis confirms the presence of the single-phase CuO on the surface of the patterned CuO-PS matrix. As compared to PS formed on the bare silicon substrate, the room-temperature photoluminescence (PL) from the CuO-PS matrix exhibits an additional weak `blue' PL band as well as a blue shift in the PL band of PS (S-band). This has been revealed from XPS analysis to be associated with the enhancement in the SiO2 content as well as formation of the carbonyl group on the surface in the case of the CuO-PS matrix.

O tubo de silicone como dreno torácico em eqüinos The silicon tube when used as a thoracic drain in horses

Directory of Open Access Journals (Sweden)

Raquel Yvonne Arantes Baccarin

2002-10-01

Full Text Available O tórax agudo possui ocorrência comum em eqüinos, e é responsável por alta mortalidade. Diante disso, o aprimoramento dos meios de tratamento certamente contribuirá para o maior índice de sobrevivência desses animais. Para tanto, este estudo teve a finalidade de avaliar: a complacência, capacidade de drenagem e a radiopacidade de tubo de silicone quando utilizado como dreno torácico em eqüinos e, as possíveis alterações causadas nas variáveis fisiológicas, no hemograma e no líquido pleural. O tubo de silicone foi introduzido na cavidade pleural de 10 eqüinos hígidos através de trocarte, mediante sedação dos animais e anestesia local. Após introdução e posicionamento, o tubo foi conectado a equipo de infusão e tampado por torneira de três vias. Avalioaram-se as variáveis fisiológicas dos animais, analisaram-se o hemograma, o fibrinogênio plasmático e o líquido pleural durante 15 dias. Os dados obtidos foram confrontados estatisticamente pela análise de variância. Concluiu-se que o tubo de silicone permite drenagem satisfatória; mantém sua consistência inalterada na presença do líquido pleural; é radiopaco ao exame radiográfico e é passível de alterar sua complacência na presença de vácuo.The acute thorax syndrome is common in horses and has a high mortality rate. The development of more efficient treatment regimens will certainly account for an increased number of successful outcomes. The purpose of this research was to evaluate the silicon tube’s complacency, draining ability and radiopacity when used as a thoracic drain in horses. Changes in physiologic parameters, blood cell count and pleural fluid were also investigated. Ten horses of different breeds, body weight and age were used and the silicon tube was placed in the pleural cavity by means of a trocar, with the horse under sedation and local anesthesia. Following introduction and placement in the ventral portion of the cavity, the tube was

The role of extra-atomic relaxation in determining Si2p binding energy shifts at silicon/silicon oxide interfaces

International Nuclear Information System (INIS)

Zhang, K.Z.; Greeley, J.N.; Banaszak Holl, M.M.; McFeely, F.R.

1997-01-01

The observed binding energy shift for silicon oxide films grown on crystalline silicon varies as a function of film thickness. The physical basis of this shift has previously been ascribed to a variety of initial state effects (Si endash O ring size, strain, stoichiometry, and crystallinity), final state effects (a variety of screening mechanisms), and extrinsic effects (charging). By constructing a structurally homogeneous silicon oxide film on silicon, initial state effects have been minimized and the magnitude of final state stabilization as a function of film thickness has been directly measured. In addition, questions regarding the charging of thin silicon oxide films on silicon have been addressed. From these studies, it is concluded that initial state effects play a negligible role in the thickness-dependent binding energy shift. For the first ∼30 Angstrom of oxide film, the thickness-dependent binding energy shift can be attributed to final state effects in the form of image charge induced stabilization. Beyond about 30 Angstrom, charging of the film occurs. copyright 1997 American Institute of Physics

Deformation Characteristics and Sealing Performance of Metallic O-rings for a Reactor Pressure Vessel

Directory of Open Access Journals (Sweden)

Mingxue Shen

2016-04-01

Full Text Available This paper provides a reference to determine the seal performance of metallic O-rings for a reactor pressure vessel (RPV. A nonlinear elastic-plastic model of an O-ring was constructed by the finite element method to analyze its intrinsic properties. It is also validated by experiments on scaled samples. The effects of the compression ratio, the geometrical parameters of the O-ring, and the structure parameters of the groove on the flange are discussed in detail. The results showed that the numerical analysis of the O-ring agrees well with the experimental data, the compression ratio has an important role in the distribution and magnitude of contact stress, and a suitable gap between the sidewall and groove can improve the sealing capability of the O-ring. After the optimization of the sealing structure, some key parameters of the O-ring (i.e., compression ratio, cross-section diameter, wall thickness, sidewall gap have been recommended for application in megakilowatt class nuclear power plants. Furthermore, air tightness and thermal cycling tests were performed to verify the rationality of the finite element method and to reliably evaluate the sealing performance of a RPV.

Deformation characteristics and sealing performance of metallic-O-ring for a reactor pressure vessel

Energy Technology Data Exchange (ETDEWEB)

Shen, Ming Xue; Peng, Xudong; Xie, Linjun; Meng, Xiang Kai [Engineering Research Center of Process Equipment and Its Remanufacture, Ministry of Education, Zhejiang University of Technology, Hangzhou (China); Li, Xing Gen [Ningbo Tiansheng Sealing Packing Co., Ltd., Ningbo (China)

2016-04-15

This paper provides a reference to determine the seal performance of metallic O-rings for a reactor pressure vessel (RPV). A nonlinear elastic-plastic model of an O-ring was constructed by the finite element method to analyze its intrinsic properties. It is also validated by experiments on scaled samples. The effects of the compression ratio, the geometrical parameters of the O-ring, and the structure parameters of the groove on the flange are discussed in detail. The results showed that the numerical analysis of the O-ring agrees well with the experimental data, the compression ratio has an important role in the distribution and magnitude of contact stress, and a suitable gap between the sidewall and groove can improve the sealing capability of the O-ring. After the optimization of the sealing structure, some key parameters of the O-ring (i.e., compression ratio, cross-section diameter, wall thickness, sidewall gap) have been recommended for application in megakilowatt class nuclear power plants. Furthermore, air tightness and thermal cycling tests were performed to verify the rationality of the finite element method and to reliably evaluate the sealing performance of a RPV.

Helium/solid powder O-ring leakage correlation experiments using a radiotracer

International Nuclear Information System (INIS)

Bild, R.W.; Leisher, W.B.; Weissman, S.H.; Seya, M.

1984-01-01

UO 2 definitely leaked past the O-ring in three of the tests confirming the major results of the previous work. Continuous leakage at these levels may require additional precautions under present regulatory policies. The mechanism and the time and particle size dependence for the leakage are not known, but there is some indication leakage is more likely at low temperatures. It is possible leakage is due to movement of the O-ring during temperature or pressure cycling at the beginning or end of a test. The radiotracer method involves less labor and is much less susceptible to contamination than the previous method. Future work will investigate leakage past lubricated O-rings and time dependence of leakage. 1 reference, 1 table

Chemical Sensors Based on Optical Ring Resonators

Science.gov (United States)

Homer, Margie; Manfreda, Allison; Mansour, Kamjou; Lin, Ying; Ksendzov, Alexander

2005-01-01

Chemical sensors based on optical ring resonators are undergoing development. A ring resonator according to this concept is a closed-circuit dielectric optical waveguide. The outermost layer of this waveguide, analogous to the optical cladding layer on an optical fiber, is a made of a polymer that (1) has an index of refraction lower than that of the waveguide core and (2) absorbs chemicals from the surrounding air. The index of refraction of the polymer changes with the concentration of absorbed chemical( s). The resonator is designed to operate with relatively strong evanescent-wave coupling between the outer polymer layer and the electromagnetic field propagating along the waveguide core. By virtue of this coupling, the chemically induced change in index of refraction of the polymer causes a measurable shift in the resonance peaks of the ring. In a prototype that has been used to demonstrate the feasibility of this sensor concept, the ring resonator is a dielectric optical waveguide laid out along a closed path resembling a racetrack (see Figure 1). The prototype was fabricated on a silicon substrate by use of standard techniques of thermal oxidation, chemical vapor deposition, photolithography, etching, and spin coating. The prototype resonator waveguide features an inner cladding of SiO2, a core of SixNy, and a chemical-sensing outer cladding of ethyl cellulose. In addition to the ring Chemical sensors based on optical ring resonators are undergoing development. A ring resonator according to this concept is a closed-circuit dielectric optical waveguide. The outermost layer of this waveguide, analogous to the optical cladding layer on an optical fiber, is a made of a polymer that (1) has an index of refraction lower than that of the waveguide core and (2) absorbs chemicals from the surrounding air. The index of refraction of the polymer changes with the concentration of absorbed chemical( s). The resonator is designed to operate with relatively strong

Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

Energy Technology Data Exchange (ETDEWEB)

Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.; Trapeznikova, I. N.; Bobyl, A. V.; Terukova, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2017-01-15

The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.

Coaxial-structured ZnO/silicon nanowires extended-gate field-effect transistor as pH sensor

International Nuclear Information System (INIS)

Li, Hung-Hsien; Yang, Chi-En; Kei, Chi-Chung; Su, Chung-Yi; Dai, Wei-Syuan; Tseng, Jung-Kuei; Yang, Po-Yu; Chou, Jung-Chuan; Cheng, Huang-Chung

2013-01-01

An extended-gate field-effect transistor (EGFET) of coaxial-structured ZnO/silicon nanowires as pH sensor was demonstrated in this paper. The oriented 1-μm-long silicon nanowires with the diameter of about 50 nm were vertically synthesized by the electroless metal deposition method at room temperature and were sequentially capped with the ZnO films using atomic layer deposition at 50 °C. The transfer characteristics (I DS –V REF ) of such ZnO/silicon nanowire EGFET sensor exhibited the sensitivity and linearity of 46.25 mV/pH and 0.9902, respectively for the different pH solutions (pH 1–pH 13). In contrast to the ZnO thin-film ones, the ZnO/silicon nanowire EGFET sensor achieved much better sensitivity and superior linearity. It was attributed to a high surface-to-volume ratio of the nanowire structures, reflecting a larger effective sensing area. The output voltage and time characteristics were also measured to indicate good reliability and durability for the ZnO/silicon nanowires sensor. Furthermore, the hysteresis was 9.74 mV after the solution was changed as pH 7 → pH 3 → pH 7 → pH 11 → pH 7. - Highlights: ► Coaxial-structured ZnO/silicon nanowire EGFET was demonstrated as pH sensor. ► EMD and ALD methods were proposed to fabricate ZnO/silicon nanowires. ► ZnO/silicon nanowire EGFET sensor achieved better sensitivity and linearity. ► ZnO/silicon nanowire EGFET sensor had good reliability and durability

In vitro cytotoxicity of maxillofacial silicone elastomers: effect of accelerated aging.

Science.gov (United States)

Bal, Bilge Turhan; Yilmaz, Handan; Aydin, Cemal; Karakoca, Seçil; Yilmaz, Sükran

2009-04-01

The purpose of this in vitro study was to evaluate the cytotoxicity of three maxillofacial silicone elastomers at 24, 48, and 72 h on L-929 cells and to determine the effect of accelerated aging on the cytotoxicity of these silicone elastomers. Disc-shaped test samples of maxillofacial silicone elastomers (Cosmesil, Episil, Multisil) were fabricated according to manufacturers' instructions under aseptic conditions. Samples were then divided into three groups: (1) not aged; (2) aged for 150 h with an accelerated weathering tester; and (3) aged for 300 h. Then the samples were placed in Dulbecco's Modified Eagle Medium/Ham's F12 (DMEM/F12) for 24, 48, and 72 h. After the incubation periods, cytotoxicity of the extracts to cultured fibroblasts (L-929) was measured by MTT assay. The degree of cytotoxicity of each sample was determined according to the reference value represented by the cells with a control (culture without sample). Statistical significance was determined by repeated measurement ANOVA (p test (p test materials in each group demonstrated high survival rates in MTT assay (Episil; 93.84%, Multisil; 88.30%, Cosmesil; 87.50%, respectively); however, in all groups, Episil material demonstrated significantly higher cell survival rate after each of the experimental incubation periods (p Accelerated aging for 150 and 300 h had no significant effect on the biocompatibility of maxillofacial silicone elastomers tested (p > 0.05).

Photonic crystal ring resonator-based four-channel dense wavelength division multiplexing demultiplexer on silicon on insulator platform: design and analysis

Science.gov (United States)

Sreenivasulu, Tupakula; Bhowmick, Kaustav; Samad, Shafeek A.; Yadunath, Thamerassery Illam R.; Badrinarayana, Tarimala; Hegde, Gopalkrishna; Srinivas, Talabattula

2018-04-01

A micro/nanofabrication feasible compact photonic crystal (PC) ring-resonator-based channel drop filter has been designed and analyzed for operation in C and L bands of communication window. The four-channel demultiplexer consists of ring resonators of holes in two-dimensional PC slab. The proposed assembly design of dense wavelength division multiplexing setup is shown to achieve optimal quality factor, without altering the lattice parameters or resonator size or inclusion of scattering holes. Transmission characteristics are analyzed using the three-dimensional finite-difference time-domain simulation approach. The radiation loss of the ring resonator was minimized by forced cancelation of radiation fields by fine-tuning the air holes inside the ring resonator. An average cross talk of -34 dB has been achieved between the adjacent channels maintaining an average quality factor of 5000. Demultiplexing is achieved by engineering only the air holes inside the ring, which makes it a simple and tolerant design from the fabrication perspective. Also, the device footprint of 500 μm2 on silicon on insulator platform makes it easy to fabricate the device using e-beam lithography technique.

{open_quotes}O{close_quotes} ring sealed process tube, Phase II, test project

Energy Technology Data Exchange (ETDEWEB)

Johnson, R.E.

1951-04-09

The {open_quotes}O{close_quotes} ring seal has been proposed to replace the van stone flange and the bellows thermal expansion assembly currently used on the existing Hanford piles to achieve water and gas seals, respectively. Possible advantages of the {open_quotes}O{close_quotes} ring seal are: (1) simplification of component parts and elimination of van stone corrosion; (2) simplification of maintenance; (3) lower costs of initial erection; (4) increased strength. This test supplements Test Project No. 27 (a preliminary thermal cycling test) in applying the {open_quotes}O{close_quotes} ring seal assembly to actual pile operating conditions.

ZnO nanocoral reef grown on porous silicon substrates without catalyst

International Nuclear Information System (INIS)

Abdulgafour, H.I.; Yam, F.K.; Hassan, Z.; AL-Heuseen, K.; Jawad, M.J.

2011-01-01

Research highlights: → Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates. → Flower-like aligned ZnO nanorods are fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. → The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency. → This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices. - Abstract: Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates with rough morphology. Flower-like aligned ZnO nanorods are also fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. The characteristics of these nanostructures are investigated using field-emission scanning electron microscopy, grazing-angle X-ray diffraction (XRD), and photoluminescence (PL) measurements of structures grown on both Si and porous Si substrates. The texture coefficient obtained from the XRD spectra indicates that the coral reef-like nanostructures are highly oriented on the porous silicon substrate with decreasing nanorods length and diameter from 800-900 nm to 3.5-5.5 μm and from 217-229 nm to 0.6-0.7 μm, respectively. The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency and the intensity increase with the improvement of ZnO crystallization. This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices.

ZnO nanocoral reef grown on porous silicon substrates without catalyst

Energy Technology Data Exchange (ETDEWEB)

Abdulgafour, H.I., E-mail: hind_alshaikh@yahoo.com [School of Physics, University Sains Malaysia 11800 Penang (Malaysia); Yam, F.K.; Hassan, Z.; AL-Heuseen, K.; Jawad, M.J. [School of Physics, University Sains Malaysia 11800 Penang (Malaysia)

2011-05-05

Research highlights: > Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates. > Flower-like aligned ZnO nanorods are fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. > The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency. > This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices. - Abstract: Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates with rough morphology. Flower-like aligned ZnO nanorods are also fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. The characteristics of these nanostructures are investigated using field-emission scanning electron microscopy, grazing-angle X-ray diffraction (XRD), and photoluminescence (PL) measurements of structures grown on both Si and porous Si substrates. The texture coefficient obtained from the XRD spectra indicates that the coral reef-like nanostructures are highly oriented on the porous silicon substrate with decreasing nanorods length and diameter from 800-900 nm to 3.5-5.5 {mu}m and from 217-229 nm to 0.6-0.7 {mu}m, respectively. The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency and the intensity increase with the improvement of ZnO crystallization. This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices.

Ion assisted deposition of SiO2 film from silicon

Science.gov (United States)

Pham, Tuan. H.; Dang, Cu. X.

2005-09-01

Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

Formation of ring marks in stocked tilapia juveniles (Oreochromis aureus/O. niloticus (Perciformes: Cichlidae

Directory of Open Access Journals (Sweden)

Ana L Ibañez

2007-12-01

Full Text Available Lake Metztitlán was dried up completely in the spring of 1998 and refilled in August of that year. In the period September-November, two cohorts of 1.6 million juveniles of a tilapia hybrid were stocked (Oreochromis aureus/O. niloticus, and monitored every month for one year. Since the date of birth of these juveniles was known, the analyses focused on whether the ring marks of the scales, sagittae and opercula or the circuli of the scales could be used to age them. The ring marks of the scales and opercula showed great variability, and the sagittae had a significant relationship with length, but it is unclear if at least the first ring mark could be formed at the hatchery and reflect changes in diet and/or tank movements in the fish farm. The circuli had a continuous regular behavior, with a formation rate of 10.38±0.93 and 11.38±0.95 circuli/month for the first and second cohorts, respectively. This proportion was maintained during the study period, and could be of help to calculate an approximate age of juveniles, especially in stocked fish that show multiple ring marks because of manipulation in fish farms and stocking events. Rev. Biol. Trop. 55 (3-4: 1005-1013. Epub 2007 December, 28.El lago de Metztitlán se secó completamente en la primavera de 1998, inundándose nuevamente en agosto del mismo año para ser repoblado entre septiembre y noviembre con 1.6 millones de jóvenes de un híbrido de tilapia (Oreochromis aureus/O. niloticus en dos periodos. Ambas cohortes fueron monitoreadas mensualmente durante un año. Debido a que la fecha de nacimiento era conocida, el objetivo del estudio fue evaluar si las marcas anulares de las escamas, las sagittae y los opérculos, o los circuli de las escamas pueden usarse para estimar la edad. Los anillos de las escamas y opérculos mostraron gran variabilidad, mientras que las de las sagittae se relacionaron significativamente con la longitud, sin embargo no quedó claro si al menos el primer

Magnetically enhanced triode etching of large area silicon membranes in a molecular bromine plasma

International Nuclear Information System (INIS)

Wolfe, J.C.; Sen, S.; Pendharkar, S.V.; Mauger, P.; Shimkunas, A.R.

1992-01-01

The optimization of a process for etching 125 mm silicon membranes formed on 150 mm wafers and bonded to Pyrex rings is discussed. A magnetically enhanced triode etching system was designed to provide an intense, remote plasma surrounding the membrane while, at the same time, suppressing the discharge over the membrane itself. For the optimized molecular bromine process, the silicon etch rate is 40 nm/min and the selectivity relative to SiO 2 is 160:1. 14 refs., 6 figs

Borgring: the discovery of a Viking Age ring fortress

DEFF Research Database (Denmark)

Goodchild, Helen; Holm, Nanna; Sindbæk, Søren Michael

2017-01-01

-type ring fortress. Borgring is the first such monument to be found in Denmark in over six decades, and provides an opportunity to investigate a type-site of Viking Age military organisation and conflict. The authors argue that Borgring complements a varied group of fortification structures in late Viking...... Age Denmark, part of a military network close to contemporaneous European ideas of military kingship and defence....

Determinação quantitativa da concentração de silicone em antiespumantes por espectroscopia FT-IR / ATR e calibração multivariada Quantitative determination of silicone in antifoaming products by FT-IR / ATR spectroscopy and multivariate calibration

Directory of Open Access Journals (Sweden)

Marcelo H. F. Garcia

2004-12-01

Full Text Available Neste trabalho apresentamos uma alternativa para a dosagem do teor de silicone (polidimetilsiloxano em antiespumantes por meio da técnica de espectroscopia no infravermelho com transformada de Fourier (FT-IR, com a utilização do acessório de reflectância total atenuada (ATR. Os espectros foram registrados na faixa espectral de 2500 a 780 cm-1, com resolução de 4 cm-1 e 128 varreduras. A calibração de um modelo linear por meio da utilização do método de mínimos quadrados parciais (PLS aplicado aos espectros foi capaz de determinar satisfatoriamente a concentração de silicone nas amostras. Este método é de extrema importância para indústrias produtoras de antiespumantes siliconados, uma vez que o desempenho de tais produtos geralmente é avaliado em função da viscosidade dos mesmos. Muitas vezes no processo de fabricação de tais produtos ocorre uma homogeneização incompleta do silicone no solvente, o que leva a resultados de viscosidade que não são representativos das amostras analisadas. A determinação da concentração do teor de silicone é uma importante ferramenta para o Controle Estatístico de Processo (CEP, pois evita o desperdício de matérias-primas empregadas na fabricação dos antiespumantes.This work presents an alternative method to determine the concentration of silicone (polydimethylsiloxane in antifoaming products using Fourier Transformed Infrared Spectroscopy (FT-IR with the attenuated total reflectance (ATR accessory. The spectra were recorded in the range from 2500 to 780 cm-1, with a resolution of 4 cm-1 and 128 scans. With calibration of a linear model using PLS regression method applied to spectral data we were able to determine the silicone concentration in the samples. This method may be useful for antifoaming producers since the performance of such products generally is evaluated as a function of their viscosity. Moreover, during manufacturing an incomplete homogenization of silicone in the

Optical bio-chemical sensors on SNOW ring resonators

Science.gov (United States)

Khorasaninejad, Mohammadreza; Clarke, Nigel; Anantram, M. P.; Singh Saini, Simarjeet

2011-08-01

In this paper, we propose and analyze novel ring resonator based bio-chemical sensors on silicon nanowire optical waveguide (SNOW) and show that the sensitivity of the sensors can be increased by an order of magnitude as compared to silicon-on-insulator based ring resonators while maintaining high index contrast and compact devices. The core of the waveguide is hollow and allows for introduction of biomaterial in the center of the mode, thereby increasing the sensitivity of detection. A sensitivity of 243 nm/refractive index unit (RIU) is achieved for a change in bulk refractive index. For surface attachment, the sensor is able to detect monolayer attachments as small as 1 Å on the surface of the silicon nanowires.

Platinum Catalyzed Ring-Opening of 1,2-Cyclopropanated Sugars with O-Nucleophiles

DEFF Research Database (Denmark)

Beyer, Jürgen; Skaanderup, Philip Robert; Madsen, Robert

1999-01-01

In the presence of a catalytic amount of Zeise's dimer 1,2-cyclopropanated sugars undergo regioselective ring-opening at C-1 with O-nucleophiles including alcohols, phenols and water to produce 2-C-branched carbohydrates.......In the presence of a catalytic amount of Zeise's dimer 1,2-cyclopropanated sugars undergo regioselective ring-opening at C-1 with O-nucleophiles including alcohols, phenols and water to produce 2-C-branched carbohydrates....

Quantum interference of ballistic carriers in one-dimensional semiconductor rings

International Nuclear Information System (INIS)

Bagraev, N.T.; Buravlev, A.D.; Klyachkin, L.E.; Malyarenko, A.M.; Ivanov, V.K.; Rykov, S.A.; Shelykh, I.A.

2000-01-01

Quantum interference of ballistic carriers has been studied for the first time, using one-dimensional rings formed by quantum wire pairs in self-assembled silicon quantum wells. Energy dependencies of the transmission coefficient is calculated as a function of the length and modulation of the quantum wire pairs separated by a unified drain-source system or the quantum point contacts. The quantum conductance is predicted to be increased by a factor of four using the unified drain-source system as a result of the quantum interference. Theoretical dependencies are revealed by the quantum conductance oscillations created by the deviations of both the drain-source voltage and external magnetic field inside the silicon one-dimensional rings. The results obtained put forward a basis to create the Aharonov-Bohm interferometer using the silicon one-dimensional ring [ru

Qubit entanglement between ring-resonator photon-pair sources on a silicon chip

Science.gov (United States)

Silverstone, J. W.; Santagati, R.; Bonneau, D.; Strain, M. J.; Sorel, M.; O'Brien, J. L.; Thompson, M. G.

2015-01-01

Entanglement—one of the most delicate phenomena in nature—is an essential resource for quantum information applications. Scalable photonic quantum devices must generate and control qubit entanglement on-chip, where quantum information is naturally encoded in photon path. Here we report a silicon photonic chip that uses resonant-enhanced photon-pair sources, spectral demultiplexers and reconfigurable optics to generate a path-entangled two-qubit state and analyse its entanglement. We show that ring-resonator-based spontaneous four-wave mixing photon-pair sources can be made highly indistinguishable and that their spectral correlations are small. We use on-chip frequency demultiplexers and reconfigurable optics to perform both quantum state tomography and the strict Bell-CHSH test, both of which confirm a high level of on-chip entanglement. This work demonstrates the integration of high-performance components that will be essential for building quantum devices and systems to harness photonic entanglement on the large scale. PMID:26245267

Effect of light aging on silicone-resin bond strength in maxillofacial prostheses.

Science.gov (United States)

Polyzois, Gregory; Pantopoulos, Antonis; Papadopoulos, Triantafillos; Hatamleh, Muhanad

2015-04-01

The aim of this study was to investigate the effect of accelerated light aging on bond strength of a silicone elastomer to three types of denture resin. A total of 60 single lap joint specimens were fabricated with auto-, heat-, and photopolymerized (n = 20) resins. An addition-type silicone elastomer (Episil-E) was bonded to resins treated with the same primer (A330-G). Thirty specimens served as controls and were tested after 24 hours, and the remaining were aged under accelerated exposure to daylight for 546 hours (irradiance 765 W/m(2) ). Lap shear joint tests were performed to evaluate bond strength at 50 mm/min crosshead speed. Two-way ANOVA and Tukey's test were carried out to detect statistical significance (p Accelerated light aging for 546 hours affects the bond strength of an addition-type silicone elastomer to three different denture resins. The bond strength significantly increased after aging for photo- and autopolymerized resins. All the bonds failed adhesively. © 2014 by the American College of Prosthodontists.

Temperature and humidity effect on aging of silicone rubbers as sealing materials for proton exchange membrane fuel cell applications

International Nuclear Information System (INIS)

Chang, Huawei; Wan, Zhongmin; Chen, Xi; Wan, Junhua; Luo, Liang; Zhang, Haining; Shu, Shuiming; Tu, Zhengkai

2016-01-01

Highlights: • Aging of silicone rubbers with different hardness was investigated. • Existed water molecules from humidified gases can accelerate the aging process. • Silicone rubber with hardness of 40 is more suitable as sealing materials. • Silicone rubbers can be used as sealing materials below 80 °C but not above 100 °C. - Abstract: Durability and reliability of seals around perimeter of each unit are critical to the lifetime of proton exchange membrane fuel cells. In this study, we investigate the aging of silicone rubbers with different hardness, often used as sealing materials for fuel cells, subjected to dry and humidified air at different temperatures. The aging properties are characterized by variation of permanent compression set value under compression, mechanical properties, and surface morphology as well. The results show that aging of silicone rubbers becomes more severe with the increase in subjected temperature. At temperature above 100 °C, silicone rubbers are not suitable for fuel cell applications. The existed water molecules from humidified gases can accelerate the aging of silicone rubbers. Among the tested samples, silicone rubber with hardness of 40 is more durable than that with hardness of 30 and 50 for fuel cells. The change of chemical structure after aging suggests that the aging of silicone rubbers mainly results from the chemical decomposition of cross-linker units for connection of polysiloxane backbones and of methyl groups attached to silicon atoms.

Characterization of Al2O3 surface passivation of silicon solar cells

International Nuclear Information System (INIS)

Albadri, Abdulrahman M.

2014-01-01

A study of the passivation of silicon surface by aluminum oxide (Al 2 O 3 ) is reported. A correlation of fixed oxide charge density (Q f ) and interface trap density (D it ) on passivation efficiency is presented. Low surface recombination velocity (SRV) was obtained even by as-deposited Al 2 O 3 films and this was found to be associated to the passivation of interface states. Fourier transfer infrared spectroscopy spectra show the existence of an interfacial silicon oxide thin layer in both as-deposited and annealed Al 2 O 3 films. Q f is found positive in as-deposited films and changing to negative upon subsequent annealing, providing thus an enhancement of the passivation in p-type silicon wafers, associated to field effects. Secondary ion mass spectrometry analysis confirms the correlation between D it and hydrogen concentration at the Al 2 O 3 /Si interface. A lowest SRV of 15 cm/s was obtained after an anneal at 400 °C in nitrogen atmosphere. - Highlights: • Al 2 O 3 provides superior passivation for silicon surfaces. • Atomic layer deposition-Al 2 O 3 was deposited at a low temperature of 200 °C. • A lowest surface passivation velocity of 15 cm/s was obtained after an anneal at 400 °C in nitrogen. • As-deposited Al 2 O 3 films form very thin SiO 2 layer responsible of low interface trap densities. • High negative fixed charge density of (− 2 × 10 12 cm −2 ) was achieved upon annealing at 400 °C

Co-occurring species differ in tree-ring δ18O trends.

Science.gov (United States)

John D. Marshall; Robert A. Monserud

2006-01-01

The stable oxygen isotope ratio (δ18O) of tree-ring cellulose is jointly determined by the δ18O of xylem water, the δ18O of atmospheric water vapor, the humidity of the atmosphere and perhaps by species-specific differences in leaf structure and function. Atmospheric...

Performance of high-resolution position-sensitive detectors developed for storage-ring decay experiments

International Nuclear Information System (INIS)

Yamaguchi, T.; Suzaki, F.; Izumikawa, T.; Miyazawa, S.; Morimoto, K.; Suzuki, T.; Tokanai, F.; Furuki, H.; Ichihashi, N.; Ichikawa, C.; Kitagawa, A.; Kuboki, T.; Momota, S.; Nagae, D.; Nagashima, M.; Nakamura, Y.; Nishikiori, R.; Niwa, T.; Ohtsubo, T.; Ozawa, A.

2013-01-01

Highlights: • Position-sensitive detectors were developed for storage-ring decay spectroscopy. • Fiber scintillation and silicon strip detectors were tested with heavy ion beams. • A new fiber scintillation detector showed an excellent position resolution. • Position and energy detection by silicon strip detectors enable full identification. -- Abstract: As next generation spectroscopic tools, heavy-ion cooler storage rings will be a unique application of highly charged RI beam experiments. Decay spectroscopy of highly charged rare isotopes provides us important information relevant to the stellar conditions, such as for the s- and r-process nucleosynthesis. In-ring decay products of highly charged RI will be momentum-analyzed and reach a position-sensitive detector set-up located outside of the storage orbit. To realize such in-ring decay experiments, we have developed and tested two types of high-resolution position-sensitive detectors: silicon strips and scintillating fibers. The beam test experiments resulted in excellent position resolutions for both detectors, which will be available for future storage-ring experiments

Permeability test and fuzzy orthogonal analysis of hydrogenated nitrile O-ring

Directory of Open Access Journals (Sweden)

Qin Hu

2015-03-01

Full Text Available In the high temperature, high pressure and high corrosive environment of the oil and gas drilling downhole, the weatherability of rubber sealing material has a great influence on the production safety. In order to study the important degree of every key environmental factor in downhole influencing the sealing performance of rubber sealing material, a new device of simulating downhole environment is designed to test the permeability of O-ring. The sample is hydrogenated nitrile O-ring and orthogonal experiment method is used to do nine tests by getting three levels from temperature, pressure and CO2 volume fraction. Test adopts fuzzy orthogonal method to analyze the main effects and the interaction between two factors, taking tensile strength, diameter variety rate and pH value of indicator as evaluation index. The results show that: the environmental factor influencing the sealing performance of hydrogenated nitrile O-ring from high to low by turns is temperature, pressure and CO2 volume fraction, while the interaction between temperature and pressure is the most significant. It provides a new way to study the influence of downhole complex environment on the performance of rubber sealing material. Moreover, the results have important reference value to further study the failure mechanism of rubber sealing ring in many environmental factors and the rational use in engineering.

Tribological Properties of Silicone Rubber-Based Ceramizable Composites Destined for Wire Covers. Part I. Studies of Block-On-Ring Friction Contact

Directory of Open Access Journals (Sweden)

R. Anyszka

2015-06-01

Full Text Available Ceramizable composites of silicone rubber matrix become more and more popular materials destined for wire covers, what can enhance fire safety of building increasing operation time of important equipment or devices (eg fire sprinklers, elevators, alarms etc. Aim of the research was to examine tribological properties and wear of commercially available silicone rubber-based ceramizable composites against steel, in configuration – steel block on composite ring, under various load (5, 10, 15, 20, 25 and 30 N. Changes to friction force in time were monitored by a tribotester, whereas wear of the composite surfaces were determined using an optical microscope. Performed studies demonstrate, that tribological characteristics and wear of the composites depend significantly on the origin of material.

Silicone elastomers with aromatic voltage stabilizers

DEFF Research Database (Denmark)

A Razak, Aliff Hisyam; Skov, Anne Ladegaard

of electron-trapping by aromatic compounds grafted to silicone backbones in a crosslinked PDMS is illustrated in Fig. 1. The electrical breakdown strength, the storage modulus and the loss modulus of the elastomer were investigated, as well as the excitation energy from the collision between electron carriers...... and benzene rings in PDMS-PPMS copolymer was measured by UV-vis spectroscopy. The developed elastomers were inherently soft with enhanced electrical breakdown strength due to delocalized pi-electrons of aromatic rings attached to the silicone backbone. The dielectric relative permittivity of PDMS...

Metal-assisted chemical etching in HF/Na2S2O8 OR HF/KMnO4 produces porous silicon

NARCIS (Netherlands)

Hadjersi, T.; Gabouze, N.; Kooij, Ernst S.; Zinine, A.; Zinine, A.; Ababou, A.; Chergui, W.; Cheraga, H.; Belhousse, S.; Djeghri, A.

2004-01-01

A new metal-assisted chemical etching method using Na2S2O8 or KMnO4 as an oxidizing agent was proposed to form a porous silicon layer on a highly resistive p-type silicon. A thin layer of Ag or Pd is deposited on the Si(100) surface prior to immersion in a solution of HF and Na2S2O8 or HF and KMnO4.

Effective tuning of electron charge and spin distribution in a dot-ring nanostructure at the ZnO interface

Science.gov (United States)

Chakraborty, Tapash; Manaselyan, Aram; Barseghyan, Manuk

2018-05-01

Electronic states and the Aharonov-Bohm effect in ZnO quantum dot-ring nanostructures containing few interacting electrons reveal several unique features. We have shown here that in contrast to the dot-rings made of conventional semiconductors, such as InAs or GaAs, the dot-rings in ZnO heterojunctions demonstrate several unique characteristics due to the unusual properties of quantum dots and rings in ZnO. In particular the energy spectra of the ZnO dot-ring and the Aharnov-Bohm oscillations are strongly dependant on the electron number in the dot or in the ring. Therefore even small changes of the confinement potential, sizes of the dot-ring or the magnetic field can drastically change the energy spectra and the behavior of Aharonov-Bohm oscillations in the system. Due to this interesting phenomena it is possible to effectively control with high accuracy the electron charge and spin distribution inside the dot-ring structure. This controlling can be achieved either by changing the magnetic field or the confinement potentials.

The plasmasheet H+ and O+ contribution on the storm time ring current

Science.gov (United States)

Mouikis, C.; Bingham, S.; Kistler, L. M.; Spence, H. E.; Gkioulidou, M.; Claudepierre, S. G.; Farrugia, C. J.

2015-12-01

The source population of the storm time ring current is the night side plasma sheet. We use Van Allen Probes and Cluster observations to determine the contribution of the convecting plasma sheet H+ and O+ particles in the storm time development of the ring current. Using the Volland-Stern model with a dipole magnetic field together with the identification of the observed energy cutoffs in the particle spectra, we specify the pressure contributed by H+ and O+ populations that are on open drift paths vs. the pressure contributed by the trapped populations, for different local times. We find that during the storm main phase most of the ring current pressure in the pre-midnight inner magnetosphere is contributed by particles on open drift paths that cause the development of a strong partial ring current that causes most of the main phase Dst drop. These particles can reach as deep as L~2 and their pressure compares to the local magnetic field pressure as deep as L~3. During the recovery phase, if these particles are not lost at the magnetopause, will become trapped and will contribute to the symmetric ring current.

Silicon coupled-ring resonator structures for slow light applications: potential, impairments and ultimate limits

International Nuclear Information System (INIS)

Canciamilla, A; Torregiani, M; Ferrari, C; Morichetti, F; Melloni, A; De La Rue, R M; Samarelli, A; Sorel, M

2010-01-01

Coupled-ring resonator-based slow light structures are reported and discussed. By combining the advantages of high index contrast silicon-on-insulator technology with an efficient thermo-optical activation, they provide an on-chip solution with a bandwidth of up to 100 GHz and a slowdown factor of up to 16, as well as a continuous reconfiguration scheme and a fine tunability. The performance of these devices is investigated in detail for both static and dynamic operation, in order to evaluate their potential in optical signal processing applications at high bit rate. The main impairments imposed by fabrication imperfections are also discussed in relation to the slowdown factor. In particular, the analysis of the impact of backscatter, disorder and two-photon absorption on the device transfer function reveals the ultimate limits of these structures and provides valuable design rules for their optimization

Various vibration modes in a silicon ring resonator driven by p–n diode actuators formed in the lateral direction

Science.gov (United States)

Tsushima, Takafumi; Asahi, Yoichi; Tanigawa, Hiroshi; Furutsuka, Takashi; Suzuki, Kenichiro

2018-06-01

In this paper, we describe p–n diode actuators that are formed in the lateral direction on resonators. Because previously reported p–n diode actuators, which were driven by a force parallel to the electrostatic force induced in a p–n diode, were fabricated in the perpendicular direction to the surface, the fabrication process to satisfy the requirement of realizing a p–n junction set in the middle of the plate thickness has been difficult. The resonators in this work are driven by p–n diodes formed in the lateral direction, making the process easy. We have fabricated a silicon ring resonator that has in-plane vibration using p–n–p and n–p–n diode actuators formed in the lateral direction. First, we consider a space charge model that can sufficiently accurately describe the force induced in p–n diode actuators and compare it with the capacitance model used in most computer simulations. Then, we show that multiplying the vibration amplitude calculated by computer simulation by the modification coefficient of 4/3 provides the vibration amplitude in the p–n diode actuators. Good agreement of the theory with experimental results of the in-plane vibration measured for silicon ring resonators is obtained. The computer simulation is very useful for evaluating various vibration modes in resonators driven by the p–n diode actuators. The small amplitude of the p–n diode actuator measured in this work is expected to increase greatly with increased doping of the actuator.

Influence of silicon dangling bonds on germanium thermal diffusion within SiO{sub 2} glass

Energy Technology Data Exchange (ETDEWEB)

Barba, D.; Martin, F.; Ross, G. G. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Cai, R. S.; Wang, Y. Q. [The Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Demarche, J.; Terwagne, G. [LARN, Centre de Recherche en Physique de la Matière et du Rayonnement (PMR), University of Namur (FUNDP), B-5000 Namur (Belgium); Rosei, F. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Center for Self-Assembled Chemical Structures, McGill University, Montreal, Quebec H3A 2K6 (Canada)

2014-03-17

We study the influence of silicon dangling bonds on germanium thermal diffusion within silicon oxide and fused silica substrates heated to high temperatures. By using scanning electron microscopy and Rutherford backscattering spectroscopy, we determine that the lower mobility of Ge found within SiO{sub 2}/Si films can be associated with the presence of unsaturated SiO{sub x} chemical bonds. Comparative measurements obtained by x-ray photoelectron spectroscopy show that 10% of silicon dangling bonds can reduce Ge desorption by 80%. Thus, the decrease of the silicon oxidation state yields a greater thermal stability of Ge inside SiO{sub 2} glass, which could enable to considerably extend the performance of Ge-based devices above 1300 K.

Complicações locais após a injeção de silicone líquido industrial: série de casos Local complications after industrial liquid silicone injection: case series

Directory of Open Access Journals (Sweden)

Daniel Francisco Mello

2013-02-01

Full Text Available OBJETIVO: analisar uma série de casos de pacientes submetidos à injeção de silicone líquido industrial de maneira clandestina e por pessoas não habilitadas. MÉTODOS: análise retrospectiva de prontuários de pacientes atendidos no período de setembro de 2003 a dezembro de 2010. Foram avaliados: sexo, idade, local e volume de silicone injetado, tempo decorrido entre a aplicação e as manifestações clínicas, complicações, tratamento e evolução. Definiu-se como precoce as manifestações ocorridas até 30 dias da injeção e manifestações tardias após este período. RESULTADOS: Foram atendidos 12 pacientes, oito eram do sexo masculino, sendo sete transexuais. O volume injetado variou de 5ml a 2000ml, sendo desconhecido em três casos. Os locais mais frequentemente utilizados para injeção foram a região de coxas e glúteos. Oito casos apresentaram manifestações precoces, com quadros de inflamação e/ou infecção. Foi necessária a realização de desbridamento cirúrgico em cinco casos. Três pacientes com histórico de injeção na região mamária foram submetidas à adenomastectomia. Houve um óbito por quadro de choque séptico refratário. CONCLUSÃO: O uso do silicone líquido industrial deve ser totalmente contraindicado como material de preenchimento e modificação do contorno corporal, podendo apresentar graves complicações e até mesmo óbito.OBJECTIVE: To analyze a case series of patients who underwent injection of industrial liquid silicone in a clandestine manner and by unauthorized persons. METHODS: We conducted a retrospective analysis of medical records of patients treated between September 2003 and December 2010. Data regarding gender, age, location and volume of silicone injected, time between application and clinical manifestations, complications, treatment and outcome were collected. Early manifestations were defined as occurring within 30 days of injection and late manifestations, the ones arising

Avaliação da resistência ao rasgamento do silicone submetido à ação de suor artificial

OpenAIRE

Teresa Camargo de Castro

2008-01-01

O Silicone é um material semi-orgânico, obtido a partir de processos industriais e classificado como polimérico. Ele tem basicamente em sua composição átomos de silício ligados a oxigênio e radicais contendo carbono o que confere ao material, características físico-químicas particulares como inércia química e estabilidade dimensional, mantendo-se íntegro nos mais diversos meios de aplicação. Dentre um sem número de utilizações, o silicone tem indicação na confecção de próteses faciais por apr...

The Role of Ionospheric O+ in Forming the Storm-time Ring Current

Science.gov (United States)

Kistler, L. M.; Mouikis, C.; Menz, A.; Bingham, S.

2017-12-01

During storm times, the particle pressure that creates the storm-time ring current in the inner magnetosphere can be dominated by O+. This is surprising, as the immediate source for the ring current is the nightside plasma sheet, and O+ is usually not the dominant species in the plasma sheet. In this talk we examine the many factors that lead to this result. The O+ outflow is enhanced during geomagnetically active times. The transport paths of O+ and H+ are different, such that the O+ that reaches the near-earth plasma sheet is more energetic than H+. The source spectrum in the near-earth plasma sheet can be harder for O+ than for H+, perhaps due to substorm injections, so that the more energetic plasma has a higher O+/H+ ratio. And finally the plasma sheet O+ can be more abundant towards the beginning of the storm, when the convection is largest, so the enhanced O+ is brought the deepest into the inner magnetosphere. We will discuss the interrelationships between these different effects as well as the ways in which O+ itself may influence the system.

Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

Science.gov (United States)

Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

2017-06-26

A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

A thermal active restrained shrinkage ring test to study the early age concrete behaviour of massive structures

International Nuclear Information System (INIS)

Briffaut, M.; Benboudjema, F.; Torrenti, J.M.; Nahas, G.

2011-01-01

In massive concrete structures, cracking may occur during hardening, especially if autogenous and thermal strains are restrained. The concrete permeability due to this cracking may rise significantly and thus increase leakage (in tank, nuclear containment...) and reduce the durability. The restrained shrinkage ring test is used to study the early age concrete behaviour (delayed strains evolution and cracking). This test shows, at 20 o C and without drying, for a concrete mix which is representative of a French nuclear power plant containment vessel (w/c ratio equal to 0.57), that the amplitude of autogenous shrinkage (about 40 μm/m for the studied concrete mix) is not high enough to cause cracking. Indeed, in this configuration, thermal shrinkage is not significant, whereas this is a major concern for massive structures. Therefore, an active test has been developed to study cracking due to restrained thermal shrinkage. This test is an evolution of the classical restrained shrinkage ring test. It allows to take into account both autogenous and thermal shrinkages. Its principle is to create the thermal strain effects by increasing the temperature of the brass ring (by a fluid circulation) in order to expand it. With this test, the early age cracking due to restrained shrinkage, the influence of reinforcement and construction joints have been experimentally studied. It shows that, as expected, reinforcement leads to an increase of the number of cracks but a decrease of crack widths. Moreover, cracking occurs preferentially at the construction joint.

Grafting of Ring-Opened Cyclopropylamine Thin Films on Silicon (100) Hydride via UV Photoionization.

Science.gov (United States)

Tung, J; Ching, J Y; Ng, Y M; Tew, L S; Khung, Y L

2017-09-13

The grafting of cyclopropylamine onto a silicon (100) hydride (Si-H) surface via a ring-opening mechanism using UV photoionization is described here. In brief, radicals generated from the Si-H surface upon UV irradiation were found to behave in classical hydrogen abstraction theory manner by which the distal amine group was first hydrogen abstracted and the radical propagated down to the cyclopropane moiety. This subsequently liberated the strained bonds of the cyclopropane group and initiated the surface grafting process, producing a thin film approximately 10-15 nm in height. Contact angle measurements also showed that such photoionization irradiation had yielded an extremely hydrophilic surface (∼21.3°) and X-ray photoelectron spectroscopy also confirmed the coupling was through the Si-C linkage. However, when the surface underwent high-temperature hydrosilylation (>160 °C), the reaction proceeded predominantly through the nucleophilic NH 2 group to form a Si-N linkage to the surface. This rendered the surface hydrophobic and hence suggested that the Si-H homolysis model may not be the main process. To the best of our knowledge, this was the first attempt reported in the literature to use photoionization to directly graft cyclopropylamine onto a silicon surface and in due course generate a highly rich NH-terminated surface that was found to be highly bioactive in promoting cell viability on the basis of 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide studies.

Comprehensive Study of SF_6/O_2 Plasma Etching for Mc-Silicon Solar Cells

International Nuclear Information System (INIS)

Li Tao; Zhou Chun-Lan; Wang Wen-Jing

2016-01-01

The mask-free SF_6/O_2 plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work. The SEM images and mc-silicon etching rate show the influence of plasma power, SF_6/O_2 flow ratios and etching time on textured surface. With the acidic-texturing samples as a reference, the reflection and IQE spectra are obtained under different experimental conditions. The IQE spectrum measurement shows an evident increase in the visible and infrared responses. By using the optimized plasma power, SF_6/O_2 flow ratios and etching time, the optimal efficiency of 15.7% on 50 × 50 mm"2 reactive ion etching textured mc-silicon silicon solar cells is achieved, mostly due to the improvement in the short-circuit current density. The corresponding open-circuit voltage, short-circuit current density and fill factor are 611 mV, 33.6 mA/cm"2, 76.5%, respectively. It is believed that such a low-cost and high-performance texturization process is promising for large-scale industrial silicon solar cell manufacturing. (paper)

Real-Time 200 Gb/s (4x56.25 Gb/s) PAM-4 Transmission over 80 km SSMF using Quantum-Dot Laser and Silicon Ring-Modulator

DEFF Research Database (Denmark)

Eiselt, Nicklas; Griesser, Helmut; Eiselt, Michael

2017-01-01

We report real-time 4x56.26-Gb/s DWDM PAM-4 transmission over 80-km SSMF with novel optical transmitter sub-assembly comprising multi-wavelength quantum-dot laser and silicon ring modulators. Pre-FEC BERs below 1E-4 are achieved after 80-km, allowing error-free operation with HD-FEC...

Long-term evaluation of fluoroelastomer O-rings in UF6

International Nuclear Information System (INIS)

Russell, R.G.; Otey, M.G.; Dippo, G.L.

1986-01-01

A major component in the gaseous centrifuge enrichment plant (GCEP) was fluoroelastomer O-rings, which were used to seal the uranium hexafluoride (UF 6 ) gas system. A program utilizing accelerated test conditions was used to help identify the best material out of four selected candidates and to predict the service life of these materials at GCEP conditions. The tests included accelerated temperatures, mechanical stress, and UF 6 exposure. Data were evaluated using the Newman--Keuls 1 ranking system to identify the best material and a zero-order reaction rate equation to help predict service life. This presentation includes a description of the test facility, the materials tested, the types of tests, objectives of the study, service life predictions, and conclusions. The O-rings are predicted to last approx. 30 years, and a high-molecular-weight polymer had the best performance ranking

A Ring-shaped photodiode designed for use in a reflectance pulse oximetry sensor in wireless health monitoring applications

DEFF Research Database (Denmark)

Duun, Sune; Haahr, Rasmus Grønbek; Birkelund, Karen

2010-01-01

We report a photodiode for use in a reflectance pulse oximeter for use in autonomous and low-power homecare applications. The novelty of the reflectance pulse oximeter is a large ring shaped backside silicon pn photodiode. The ring-shaped photodiode gives optimal gathering of light and thereby...... enable very low light-emitting diode (LED) driving currents for the pulse oximeter. The photodiode also have a two layer SiO2/SiN interference filter yielding 98% transmission at the measuring wavelengths, 660 nm and 940 nm, and suppressing other wavelengths down to 50% transmission. The photodiode has...

Symmetry and structure of N-O shallow donor complexes in silicon

International Nuclear Information System (INIS)

Alt, H.Ch.; Wagner, H.E.

2012-01-01

Shallow donors in silicon related to nitrogen-oxygen complexes have been investigated by piezospectroscopy of their hydrogenic transitions in the far infrared. Complete stress dependences up to 0.25 GPa were obtained for the 1s→2p 0 and 1s→2p ± transitions of the most prominent members of the (N, O)-family, N-O-3 and N-O-5. Very unusual for shallow donors in silicon, the symmetry of the ground state wave function is T 2 -like. The lifting of orientational degeneracy for stress in the 〈1 0 0〉, 〈1 1 1〉, and 〈1 1 0〉 directions is compatible with a C 2v defect symmetry. Data from the other species of the (N, O)-family are indicative for the same symmetry. The microscopic structure of these centers, in part contradictory to present theoretical models, is discussed.

Structural and optical properties of ZnO films grown on silicon and ...

Indian Academy of Sciences (India)

TECS

Abstract. Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon .... voluted O1 s and (c) typical Zr 3d spectra of ZrO2/ZnO/Si film. .... strate doping concentration (NB) of ≈ 2⋅5 × 1015 cm–3 is.

A proposed mechanism for investigating the effect of porous silicon buffer layer on TiO{sub 2} nanorods growth

Energy Technology Data Exchange (ETDEWEB)

Rahmani, N. [Department of Physics, Alzahra University, Tehran, 1993893973 (Iran, Islamic Republic of); Dariani, R.S., E-mail: dariani@alzahra.ac.ir [Department of Physics, Alzahra University, Tehran, 1993893973 (Iran, Islamic Republic of); Rajabi, M. [Deparment of Advanced Materials and Renewable Energies, Iranian Research Organization for Science and Technology (IROST), Tehran 3353136846 (Iran, Islamic Republic of)

2016-03-15

Graphical abstract: - Highlights: • TiO{sub 2} nanorods (NRs) are synthesized on silicon and porous silicon (PS) substrates by hydrothermal method. • TiO{sub 2} NRs grown on PS substrates have a better growth compared to those grown on silicon. • Also increasing substrate porosity leads to an increase in density of the NRs. • We proposed a growth mechanism to explain how can control the local surface chemical potential. - Abstract: In this study, we have synthesized TiO{sub 2} nanorods (NRs) on silicon and porous silicon (PS) substrates by hydrothermal method. The PS substrates with different porosities were fabricated by electrochemical anodization on silicon. According to the field emission electron microscopy images, TiO{sub 2} NRs grown on PS substrates have a better growth compared to those grown on silicon. Also increasing substrate porosity leads to an increase in density of the NRs. Atomic force microscopy observation demonstrates that porous layer formation due to etching of silicon surface leads to an increase of its roughness. Results indicate surface roughness evolution with porosity increasing enhances TiO{sub 2} nucleation on substrate and thus increases TiO{sub 2} NRs density. We propose a growth mechanism to explain how we can control the local surface chemical potential and thus the nucleation and alignment of TiO{sub 2} NRs by surface roughness variation. Also, photoluminescence studies show a red-shift in band gap energy of NRs compared to that of common bulk TiO{sub 2}.

Mode structure in an optically pumped D2O far infrared ring laser

International Nuclear Information System (INIS)

Yuan, D.C.; Soumagne, G.; Siegrist, M.R.

1989-07-01

The mode structures in an optically pumped D 2 O far infrared ring laser and a corresponding linear resonator have been compared. While single mode operation can be obtained over the whole useful pressure range in the ring structure, this is only possible at pressures greater than 8 Torr in the linear resonator case. A numerical model predicts quite well the pulse shape, pressure dependence and influence of the resonator quality in the ring cavity. (author) 12 figs., 8 refs

The investigation of influence of accelerated electrons on SiO2 used in silicon solar cells

International Nuclear Information System (INIS)

Abdullaev, G.B.; Bakirov, M.Ya; Akhmedov, G.M.; Safarov, N.A.; Safarova, F.D.

1994-01-01

The process of radiation defects production in enlightened SiO 2 layers coated on silicon solar cells was studied. During irradiation the silicon solar cells with enlightened layers radiation defects are formed both in silicon and SiO 2 thus making worse photo energetic parameters of cells. For investigation of radiation effects formed under irradiation by electrons with 5 MeV energy and cobalt-60 gamma-rays photoluminescence, absorption spectra and electron spin resonance methods were used. It is supposed that main radiation defects in silicon dioxide are E'-centers and oxygen vacancies. (A.D. Avezov). 10 refs.; 2 figs

Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates

Directory of Open Access Journals (Sweden)

C. Adamo

2015-06-01

Full Text Available We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100 Si by reactive molecular-beam epitaxy (MBE for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si. In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

Science.gov (United States)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

Y-Ba-Cu-O superconducting film on oxidized silicon

International Nuclear Information System (INIS)

Gupta, R.P.; Khokle, W.S.; Dubey, R.C.; Singhal, S.; Nagpal, K.C.; Rao, G.S.T.; Jain, J.D.

1988-01-01

We report thick superconducting films of Y-Ba-Cu-O on oxidized silicon substrates. The critical temperatures for onset and zero resistance are 96 and 77 K, respectively. X-ray diffraction analysis predicts 1, 2, 3 composition and orthorhombic phase of the film

Analysis and interpretation of a unique Arabic finger ring from the Viking Age town of Birka, Sweden.

Science.gov (United States)

Wärmländer, Sebastian K T S; Wåhlander, Linda; Saage, Ragnar; Rezakhani, Khodadad; Hamid Hassan, Saied A; Neiß, Michael

2015-01-01

In this work we used non-destructive SEM imaging and EDS analysis to characterize the material composition of an Arabic finger ring, which was found in a 9(th) c. woman's grave at the Viking Age (A.D. 793-1066) trading center of Birka, Sweden. The ring is set with a violet stone inscribed with Arabic Kufic writing, here interpreted as reading "il-la-lah", i.e. "For/to Allah". The stone was previously thought to be an amethyst, but the current results show it to be coloured glass. The ring has been cast in a high-grade silver alloy (94.5/5.5 Ag/Cu) and retains the post-casting marks from the filing done to remove flash and mold lines. Thus, the ring has rarely been worn, and likely passed from the silversmith to the woman buried at Birka with few owners in between. The ring may therefore constitute material evidence for direct interactions between Viking Age Scandinavia and the Islamic world. Being the only ring with an Arabic inscription found at a Scandinavian archaeological site, it is a unique object among Swedish Viking Age material. The technical analysis presented here provides a better understanding of the properties and background of this intriguing piece of jewelry. © Wiley Periodicals, Inc.

The decrease in silicon concentration of the connective tissues with age in rats is a marker of connective tissue turnover.

Science.gov (United States)

Jugdaohsingh, Ravin; Watson, Abigail I E; Pedro, Liliana D; Powell, Jonathan J

2015-06-01

Silicon may be important for bone and connective tissue health. Higher concentrations of silicon are suggested to be associated with bone and the connective tissues, compared with the non-connective soft tissues. Moreover, in connective tissues it has been suggested that silicon levels may decrease with age based upon analyses of human aorta. These claims, however, have not been tested under controlled conditions. Here connective and non-connective tissues were collected and analysed for silicon levels from female Sprague-Dawley rats of different ages (namely, 3, 5, 8, 12, 26 and 43 weeks; n=8-10 per age group), all maintained on the same feed source and drinking water, and kept in the same environment from weaning to adulthood. Tissues (696 samples) were digested in nitric acid and analysed by inductively coupled plasma optical emission spectrometry for total silicon content. Fasting serum samples were also collected, diluted and analysed for silicon. Higher concentrations of silicon (up to 50-fold) were found associated with bone and the connective tissues compared with the non-connective tissues. Although total silicon content increased with age in all tissues, the highest connective tissue silicon concentrations (up to 9.98 μg/g wet weight) were found in young weanling rats, decreasing thereafter with age (by 2-6 fold). Fasting serum silicon concentrations reflected the pattern of connective tissue silicon concentrations and, both measures, when compared to collagen data from a prior experiment in Sprague-Dawley rats, mirrored type I collagen turnover with age. Our findings confirm the link between silicon and connective tissues and would imply that young growing rats have proportionally higher requirements for dietary silicon than mature adults, for bone and connective tissue development, although this was not formally investigated here. However, estimation of total body silicon content suggested that actual Si requirements may be substantially lower than

The decrease in silicon concentration of the connective tissues with age in rats is a marker of connective tissue turnover☆

Science.gov (United States)

Jugdaohsingh, Ravin; Watson, Abigail I.E.; Pedro, Liliana D.; Powell, Jonathan J.

2015-01-01

Silicon may be important for bone and connective tissue health. Higher concentrations of silicon are suggested to be associated with bone and the connective tissues, compared with the non-connective soft tissues. Moreover, in connective tissues it has been suggested that silicon levels may decrease with age based upon analyses of human aorta. These claims, however, have not been tested under controlled conditions. Here connective and non-connective tissues were collected and analysed for silicon levels from female Sprague–Dawley rats of different ages (namely, 3, 5, 8, 12, 26 and 43 weeks; n = 8–10 per age group), all maintained on the same feed source and drinking water, and kept in the same environment from weaning to adulthood. Tissues (696 samples) were digested in nitric acid and analysed by inductively coupled plasma optical emission spectrometry for total silicon content. Fasting serum samples were also collected, diluted and analysed for silicon. Higher concentrations of silicon (up to 50-fold) were found associated with bone and the connective tissues compared with the non-connective tissues. Although total silicon content increased with age in all tissues, the highest connective tissue silicon concentrations (up to 9.98 μg/g wet weight) were found in young weanling rats, decreasing thereafter with age (by 2–6 fold). Fasting serum silicon concentrations reflected the pattern of connective tissue silicon concentrations and, both measures, when compared to collagen data from a prior experiment in Sprague–Dawley rats, mirrored type I collagen turnover with age. Our findings confirm the link between silicon and connective tissues and would imply that young growing rats have proportionally higher requirements for dietary silicon than mature adults, for bone and connective tissue development, although this was not formally investigated here. However, estimation of total body silicon content suggested that actual Si requirements may be substantially

SiO2 on silicon: behavior under heavy ion irradiation

International Nuclear Information System (INIS)

Rotaru, C.

2004-03-01

Heavy ion irradiation was performed on a-SiO 2 layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO 2 is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO 2 respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

Analysis of Systems Hardware Flown on LDEF-Results of the Systems Special Investigation Group

Science.gov (United States)

1992-04-01

EXPERIMENT TRAY Butyl O-ring P0004 F2 Butyl rubber seal A0138 B3 EP O-ring S0069 A9 EPDM rubber P0005 CENTER RING NBR rubber P0005 CENTER RING...and acrylonitrile butadiene rubber ( NBR ) were tested in experiment P0005, Space Aging of Solid Rocket Materials. The elastomers were not exposed to...Parker Seal B-612-70 EECC P0004 Metal "V" Seal EECC EPDM rubber , 053A, Kirkhill P0005 NBR rubber , V-45, Kirkhill P0005 Silicon rubber gaskets

Potassium ions in SiO2: electrets for silicon surface passivation

Science.gov (United States)

Bonilla, Ruy S.; Wilshaw, Peter R.

2018-01-01

This manuscript reports an experimental and theoretical study of the transport of potassium ions in thin silicon dioxide films. While alkali contamination was largely researched in the context of MOSFET instability, recent reports indicate that potassium ions can be embedded into oxide films to produce dielectric materials with permanent electric charge, also known as electrets. These electrets are integral to a number of applications, including the passivation of silicon surfaces for optoelectronic devices. In this work, electric field assisted migration of ions is used to rapidly drive K+ into SiO2 and produce effective passivation of silicon surfaces. Charge concentrations of up to ~5  ×  1012 e cm-2 have been achieved. This charge was seen to be stable for over 1500 d, with decay time constants as high as 17 000 d, producing an effectively passivated oxide-silicon interface with SRV  industrial manufacture of silicon optoelectronic devices.

Electrochemical and hydrothermal deposition of ZnO on silicon: from continuous films to nanocrystals

International Nuclear Information System (INIS)

Balucani, M.; Nenzi, P.; Chubenko, E.; Klyshko, A.; Bondarenko, V.

2011-01-01

This article presents the study of the electrochemical deposition of zinc oxide from the non-aqueous solution based on dimethyl sulfoxide and zinc chloride into the porous silicon matrix. The features of the deposition process depending on the thickness of the porous silicon layer are presented. It is shown that after deposition process the porous silicon matrix is filled with zinc oxide nanocrystals with a diameter of 10–50 nm. The electrochemically deposited zinc oxide layers on top of porous silicon are shown to have a crystalline structure. It is also shown that zinc oxide crystals formed by hydrothermal method on the surface of electrochemically deposited zinc oxide film demonstrate ultra-violet luminescence. The effect of the porous silicon layer thickness on the morphology of the zinc oxide is shown. The structures obtained demonstrated two luminescence bands peaking at the 375 and 600 nm wavelengths. Possible applications of ZnO nanostructures, porous and continuous polycrystalline ZnO films such as gas sensors, light-emitting diodes, photovoltaic devices, and nanopiezo energy generators are considered. Aspects of integration with conventional silicon technology are also discussed.

Position calibration of silicon strip detector using quasi-elastic scattering of 16O+197Au

International Nuclear Information System (INIS)

Yan Wenqi; Hu Hailong; Zhang Gaolong

2013-01-01

Background: Elastic scattering is induced by weakly unstable nuclei. Generally, a good angular resolution for angular distribution of elastic scattering is needed. The silicon strip detector is often used for this kind of experiment. Purpose: In order to use silicon strip detector to study the elastic scattering of weakly unbound nuclei, it is important to get the information of its position calibration. It is well known that the elastic scattering of stable nuclei has a good angular distribution and many experimental data have been obtained. Methods: So the scattering of stable nuclei can be used to calibrate the position information of silicon strip detector. In this experiment, the positions of silicon strip detectors are calibrated using 101 MeV and 59 MeV 16 O scattering on the 197 Au target. Results: The quasi-elastic peaks can be observed in the silicon strip detectors and the counts of quasi-elastic 16 O can be obtained. The solid angles of the silicon strip detectors are calibrated by using alpha source which has three alpha energy values. The angular distribution of quasi-elastic scattering of 16 O+ 197 Au is obtained at these two energy values. Conclusions: The experimental data of angular distribution are reasonable and fit for the principle of angular distribution of elastic scattering. It is concluded that in the experiment these silicon strip detectors can accurately give the position information and can be used for the elastic scattering experiment. (authors)

Sifat fisika dan analisis gugus fungsi karet seal o-ring dari bahan termoplastik elastomer nitrile butadiene rubber (NBR dan polyvinyl chloride (PVC

Directory of Open Access Journals (Sweden)

Arum Yuniari

2013-06-01

Full Text Available The purpose of this research was to determine the physical properties and functional groups on O-ring rubber seals made of thermoplastic elastomers blend NBR and PVC. Composition of the NBR / PVC were successively varied : 90/10; 85/15; 80/20; 75/25; 70/30 and 65/35 phr. Mixing process between NBR/PVC with additive used a two roll mill within a temperature of 60º - 80 ºC, the vulcanization process used a hydraulic press at a temperature of 170 oC and pressure of 150 kg/cm2. The physical properties were evaluated including tensile strength, elongation at break, hardness, before and after aging, hardness after immersion in isooctane and swelling while analysis of functional groups was also carried out by method of Fourier Transform Infrared Spectrophotometer (FTIR. The result of the best vulcanized was characterized by tensile strength 188.93 kg/cm2, the change of tensile strength after aging 2.50%, elongation at break of 400%, the change of elongation at break after aging was 12.5%, hardness 75 shore A, the change of hardness after aging 0%, the change of hardness after immersion in isooctane 1.3%, swelling 0.8% and functional group of vulcanisate was indicated by new peak (OH at wave band of 3468 cm-1. Those formula met the requirements of the technical specifications of ASTM D 2000 seal O-ring.

Corneal ring infiltration in contact lens wearers

Directory of Open Access Journals (Sweden)

Seyed Ali Tabatabaei

2017-01-01

Full Text Available To report a case of atypical sterile ring infiltrates during wearing soft silicone hydrogel contact lens due to poor lens care. A 29-year-old woman presented with complaints of pain, redness, and morning discharge. She was wearing soft silicone hydrogel contact lens previously; her current symptoms began 1 week before presentation. On examination, best-corrected visual acuity was 20/40 in that eye. Slit-lamp examination revealed dense, ring-shaped infiltrate involving both the superficial and deep stromal layers with lucid interval to the limbus, edema of the epithelium, epithelial defect, and vascularization of the superior limbus. Cornea-specific in vivo laser confocal microscopy (Heidelberg Retina Tomograph 2 Rostock Cornea Module, HRT 2-RCM, Heidelberg Engineering GmbH, Dossenheim, Germany revealed Langerhans cells and no sign of Acanthamoeba or fungal features, using lid scraping and anti-inflammatory drops; her vision completely recovered. We reported an atypical case of a sterile corneal ring infiltrate associated with soft contact lens wearing; smear, culture, and confocal microscopy confirmed a sterile inflammatory reaction.

Climate and Streamflow Reconstruction on the São Francisco Basin, Brazil, Using Tree-Ring Data

Science.gov (United States)

Pereira, G. D. A.; Barbosa, A. C. M. C.; Granato-Souza, D.; Stahle, D. W.; Torbenson, M.; dos Santos, R. M.; Rodrigues Alves Delfino Barbosa, J. P.

2017-12-01

The São Francisco River crosses the most drought-prone region of Brazil and regional economic dynamics are dependent on the water availability in the basin. The seasonally dry forests are widely distributed in the basin, where Cedrela fissilis Vell (cedro) are frequently found. This semi-arid region provides a favorable setting where the deciduous cedro trees form well-defined semi-ring porous annual rings that can be exactly crossdated and used to build climate sensitive chronologies. Therefore, we have developed chronologies of cedro from seasonally dry forest fragments of three sites located in the middle-sector of the São Francisco River basin and south limit of the Brazilian Drought Polygon. The samples were analyzed according to standard procedures: sample preparation, ring count, crossdating and measurement of the tree rings. Dating quality was tested using the computer program COFECHA and ring-width time series where detrended and standardized to produce the final index chronology using the ARSTAN program. The results show that crossdating within and among trees from different sites demonstrate the potential to expand the spatial sampling. The tree-ring chronologies are sensitive with wet season precipitation totals (October - March), and can explain approximately 40% of the variance (1961-2015). Significant correlation was also observed with total annual discharge of the Rio São Francisco River measured at Barra (r=0.48; 1961-2015). However, the correlation disapears after 1993 (r=0.64 for 1961-1993, but r=-0.004 for 1994-2015) and we suspect that the stream gage at Barra has been impacted by human activity. Tree-ring chronologies can provide important information on climate and streamflow variability of São Francisco River, where hydrological records are often short and discontinuous. This chronology is now being extended with 150-yr old trees from the region and may be used to reconstruct climate and streamflow records back to the pre

Novel epoxy-silicone thermolytic transparent packaging adhesives chemical modified by ZnO nanowires for HB LEDs

International Nuclear Information System (INIS)

He Ying; Wang Junan; Pei Changlong; Song Jizhong; Zhu Di; Chen Jie

2010-01-01

A novel high transparent thermolytic epoxy-silicone for high-brightness light-emitting diode (HB-LED) is introduced, which was synthesized by polymerization using silicone matrix via diglycidyl ether bisphenol-A epoxy resin (DGEBA) as reinforcing agent, and filling ZnO nanowires to modify thermal conductivity and control refractive index of the hybrid material. The interactions of ZnO nanowires with polymers are mediated by the ligands attached to the nanoparticles. Thus, the ligands markedly influence the properties of ZnO nanowires/epoxy-silicone composites. The refractive indices of the prepared hybrid adhesives can be tuned by the ZnO nanowires from 1.4711 to 1.5605. Light transmittance can be increased by 20% from 80 to 95%. The thermal conductivity of the transparent packaging adhesives is 0.89-0.90 W/mK.

MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

Directory of Open Access Journals (Sweden)

Amornrat Limmanee

2014-01-01

Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

Silicon passivation and tunneling contact formation by atomic layer deposited Al2O3/ZnO stacks

NARCIS (Netherlands)

Garcia-Alonso Garcia, D.; Smit, S.; Bordihn, S.; Kessels, W.M.M.

2013-01-01

The passivation of Si by Al2O3/ZnO stacks, which can serve as passivated tunneling contacts or heterojunctions in silicon photovoltaics, was investigated. It was demonstrated that stacks with Al2O3 thicknesses >3 nm lead to lower surface recombination velocities (Seff,max <4 cm s-1) on n- and p-type

Top-down fabrication of vertical silicon nano-rings based on Poisson diffraction

International Nuclear Information System (INIS)

Ai Yujie; Huang Ru; Hao Zhihua; Wang Runsheng; Liu Changze; Fan Chunhui; Wang Yangyuan

2011-01-01

Vertical Si nano-rings with a uniform thickness of about 100 nm have been fabricated by conventional optical photolithography with a low cost based on Poisson diffraction. Moreover, the roughness of the Si nano-rings can be effectively reduced by sacrificial oxidation. In order to increase the density of the nano-rings, coaxial twin Si nano-rings have been fabricated by the Poisson diffraction method combined with the spacer technique. The thickness of both the inner and outer Si nano-rings is about 60 nm, and the gap between the twin nano-rings is about 100 nm.

An investigation into the radiation damage of the silicon detectors of the H1-PLUG calorimeter within the HERA environment

International Nuclear Information System (INIS)

Hildesheim, W.; Seidel, M.

1995-07-01

The silicon detectors used in the H1-PLUG calorimeter have shown increasing aging effects during the '94 run period of the electron proton storage ring HERA. These effects were particularly manifest as degradation of the signal to noise level and the calibration stability. The reasons for this behaviour have been found to be correlated with radiation damage to the silicon oxide passivation edges of the detectors in strong and fluctuating increases of the leakage currents and in severe changes of the flat band voltages. Depletion voltages however are found to be stable and therefore bulk damage of the silicon can be excluded. A comparison with measurements made by thermoluminescence dosimeters as well as related laboratory experiments suggest that the aging is due to very low energetic electrons and photons. (orig.)

Ring and jet-like structures and two-dimensional intermittency in nucleus-nucleus collisions at 200 AGeV/c

International Nuclear Information System (INIS)

Ghosh, M.K.; Haldar, P.K.; Manna, S.K.; Mukhopadhyay, A.; Singh, G.

2011-01-01

We have investigated the presence of ring and/or jet-like structures in the angular emission of secondary charged mesons (shower tracks) coming out of 16 O-Ag/Br and 32 S-Ag/Br interactions, each at an incident momentum of 200 AGeV/c. Nuclear photographic emulsion technique has been used to collect the experimental data. The experimental results have been compared with the results simulated by Monte Carlo method. The analysis indicates presence of ring and jet-like structures in the experimental data beyond statistical noise. This kind of jet structure is expected to give rise to a strong two-dimensional (2d) intermittency. The self-affine behaviour of 2d scaled factorial moments (SFM) has therefore been investigated and the strength of 2d intermittency has been determined. For each set of data the 2d results have been compared with the respective one-dimensional (1d) intermittency results.

Vaginal rings for delivery of HIV microbicides

Directory of Open Access Journals (Sweden)

McCoy CF

2012-11-01

Full Text Available R Karl Malcolm, Susan M Fetherston, Clare F McCoy, Peter Boyd, Ian MajorSchool of Pharmacy, Queen's University Belfast, Belfast, UKAbstract: Following the successful development of long-acting steroid-releasing vaginal ring devices for the treatment of menopausal symptoms and contraception, there is now considerable interest in applying similar devices to the controlled release of microbicides against HIV. In this review article, the vaginal ring concept is first considered within the wider context of the early advances in controlled-release technology, before describing the various types of ring device available today. The remainder of the article highlights the key developments in HIV microbicide-releasing vaginal rings, with a particular focus on the dapivirine ring that is presently in late-stage clinical testing.Keywords: controlled release, sustained release, antiretroviral, dapivirine, SILCS diaphragm, silicone elastomer, thermoplastic

Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

International Nuclear Information System (INIS)

Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

2012-01-01

Highlights: ► Nano-mechanical properties on annealed ultra-thin HfO 2 film are studied. ► By AFM analysis, hardness of the crystallized HfO 2 film significantly increases. ► By nano-indention, the film hardness increases with less contact stiffness. ► Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO 2 ) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO 2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO 2 films deposited on silicon wafers (HfO 2 /SiO 2 /Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO 2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO 2 phases for the atomic layer deposited HfO 2 . The HfSi x O y complex formed at the interface between HfO 2 and SiO 2 /Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO 2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO 2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO 2

Performance of ceramics in ring/cylinder applications

International Nuclear Information System (INIS)

Dufrane, K.F.; Glaeser, W.A.

1987-01-01

In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures

CuO-Functionalized Silicon Photoanodes for Photoelectrochemical Water Splitting Devices.

Science.gov (United States)

Shi, Yuanyuan; Gimbert-Suriñach, Carolina; Han, Tingting; Berardi, Serena; Lanza, Mario; Llobet, Antoni

2016-01-13

One main difficulty for the technological development of photoelectrochemical (PEC) water splitting (WS) devices is the fabrication of active, stable and cost-effective photoelectrodes that ensure high performance. Here, we report the development of a CuO/Silicon based photoanode, which shows an onset potential for the water oxidation of 0.53 V vs SCE at pH 9, that is, an overpotential of 75 mV, and high stability above 10 h. These values account for a photovoltage of 420 mV due to the absorbed photons by silicon, as proven by comparing with analogous CuO/FTO electrodes that are not photoactive. The photoanodes have been fabricated by sputtering a thin film of Cu(0) on commercially available n-type Si wafers, followed by a photoelectrochemical treatment in basic pH conditions. The resulting CuO/Cu layer acts as (1) protective layer to avoid the corrosion of nSi, (2) p-type hole conducting layer for efficient charge separation and transportation, and (3) electrocatalyst to reduce the overpotential of the water oxidation reaction. The low cost, low toxicity, and good performance of CuO-based coatings can be an attractive solution to functionalize unstable materials for solar energy conversion.

Wannier–Stark electro-optical effect, quasi-guided and photonic modes in 2D macroporous silicon structures with SiO_2 coatings

International Nuclear Information System (INIS)

Karachevtseva, L.; Goltviansky, Yu.; Sapelnikova, O.; Lytvynenko, O.; Stronska, O.; Bo, Wang; Kartel, M.

2016-01-01

Highlights: • The IR absorption spectra of oxidized macroporous silicon were studied. • The Wannier–Stark electro-optical effect on Si-SiO_2 boundary was confirmed. • An additional electric field of quasi-guided optical modes was evaluated. • The photonic modes and band gaps were measured as peculiarities in absorption spectra. - Abstract: Opportunities to enhance the properties of structured surfaces were demonstrated on 2D macroporous silicon structures with SiO_2 coatings. We investigated the IR light absorption oscillations in macroporous silicon structures with SiO2 coatings 0–800 nm thick. The Wannier–Stark electro-optical effect due to strong electric field on Si-SiO_2boundary and an additional electric field of quasi-guided optical modes were taken into account. The photonic modes and band gaps were also considered as peculiarities in absorbance spectra of macroporous silicon structures with a thick SiO_2 coating. The photonic modes do not coincide with the quasi-guided modes in the silicon matrix and do not appear in absorption spectra of 2D macroporous silicon structures with surface nanocrystals.

Soil reaction and absorption of silicon by rice Reação do solo e absorção de silício pelo arroz

Directory of Open Access Journals (Sweden)

Mônica Sartori de Camargo

2007-01-01

Full Text Available The solubility and availability of silicon can be influenced by soil reaction. A pot experiment with a clayey textured Rhodic Acrustox was conducted under greenhouse conditions to evaluate the effect of soil reaction on silicon availability to rice plants. The experiment was set up in a completely randomized design, using a factorial scheme (4 x 4 with four materials (calcitic lime, calcium and magnesium silicate, pure silicic acid, and wollastonite, four rates (0, 2500, 5000 and 7500 mg per 5 kg-pot and four replicates. After 60 days, dry matter yield and silicon absorption by the rice shoot plants, pH CaCl2, and soluble silicon (0.5 mol L-1 acetic acid and 0.01 mol L-1CaCl2 in the soil were evaluated. The materials increased soil pH as the applied rates increased, except silicic acid. Soluble silicon extracted by 0.5 mol L-1 acetic acid also increased with applied rates. For calcium chloride, soluble silicon increased in the soil only with wollastonite and calcium and magnesium silicate, agreeing with its total content. Silicon absorption by the above-ground part of the rice plants was linearly correlated with rates of wollastonite, followed by calcium and magnesium silicate, silicic acid and calcitic lime. Soil pH increase with lime was not sufficient to provide silicon to the rice. The 0.01 mol L-1 CaCl2 soluble silicon had the best correlation with silicon absorption by plants. More studies are necessary under field conditions and other soils to corroborate the presented results.A solubilidade e disponibilidade de silício podem ser influenciadas pela reação do solo. Com o objetivo de estudar o efeito da reação do solo sobre a disponibilidade de silício para a cultura do arroz, foi conduzido experimento em Latossolo Vermelho álico textura argilosa em casa-de-vegetação. O experimento foi conduzido em fatorial 4 x 4, delineamento em blocos inteiramente casualizados e quatro repetições. Quatro materiais (calcário, silicato de c

Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

Directory of Open Access Journals (Sweden)

Zhuk Sergey I.

2017-01-01

Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

Silicon-on-Insulator Nanowire Based Optical Waveguide Biosensors

International Nuclear Information System (INIS)

Li, Mingyu; Liu, Yong; Chen, Yangqing; He, Jian-Jun

2016-01-01

Optical waveguide biosensors based on silicon-on-insulator (SOI) nanowire have been developed for label free molecular detection. This paper reviews our work on the design, fabrication and measurement of SOI nanowire based high-sensitivity biosensors employing Vernier effect. Biosensing experiments using cascaded double-ring sensor and Mach-Zehnder- ring sensor integrated with microfluidic channels are demonstrated (paper)

Hexacoordinate bonding and aromaticity in silicon phthalocyanine.

Science.gov (United States)

Yang, Yang

2010-12-23

Si-E bondings in hexacoordinate silicon phthalocyanine were analyzed using bond order (BO), energy partition, atoms in molecules (AIM), electron localization function (ELF), and localized orbital locator (LOL). Bond models were proposed to explain differences between hexacoordinate and tetracoordinate Si-E bondings. Aromaticity of silicon phthalocyanine was investigated using nucleus-independent chemical shift (NICS), harmonic oscillator model of aromaticity (HOMA), conceptual density functional theory (DFT), ring critical point (RCP) descriptors, and delocalization index (DI). Structure, energy, bonding, and aromaticity of tetracoordinate silicon phthalocyanine were studied and compared with hexacoordinate one.

Silicon surface passivation using thin HfO2 films by atomic layer deposition

International Nuclear Information System (INIS)

Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

2015-01-01

Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

Influence of pigments and opacifiers on color stability of an artificially aged facial silicone.

Science.gov (United States)

dos Santos, Daniela Micheline; Goiato, Marcelo Coelho; Moreno, Amália; Pesqueira, Aldiéris Alves; Haddad, Marcela Filiè

2011-04-01

The aim of this study was to evaluate the influence of two pigments (ceramic powder and oil paint) and one opacifier (barium sulfate) on the color stability of MDX4-4210 facial silicone submitted to accelerated aging. Sixty specimens of silicone were fabricated and divided into six groups--colorless (G1), colorless with opacifier (G2), ceramic (G3), ceramic with opacifier (G4), oil (G5), oil with opacifier (G6). All replicas were submitted to accelerated aging for 1008 hours. The evaluations of chromatic alteration through visual analysis and reflection spectrophotometry were carried out initially and after 252, 504, and 1008 hours of aging. The results were submitted to ANOVA and Tukey's test at 5% level of significance. All groups exhibited chromatic alteration (ΔE > 0); however, this color alteration was not perceptible through visual analysis of the color. The pigmented groups with opacifier presented the lowest ΔE values, with a statistical difference from the other groups. For the groups without opacifier, the group pigmented with oil paint exhibited the lowest ΔE values in the different aging periods, with a statistical difference. Accelerated aging generated significant chromatic alterations in all groups after 252 hours, except for the colorless and oil groups, both with opacifier (G2 and G6). The opacifier protects facial silicones against color degradation, and oil paint is a stable pigment even without addition of opacifier. © 2010 by The American College of Prosthodontists.

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Many missing rings in old Canary pines can be related with age, fires and traditional uses

Energy Technology Data Exchange (ETDEWEB)

Génova, M.; Santana, C.; Martínez, B.

2017-11-01

Aim and area of study: In the present paper we estimated the age of four monumental Pinus canariensis of Gran Canaria (Canary Islands, Spain) by means of tree-ring analysis. Many tree-ring series have been accurately studied and many missing rings have been determined. Material and methods: The trees were dead and the samples analysed were big disks. We measured numerous radii and crossdated the individual tree-ring series, paying particular attention to the existence and location of missing rings. We have distinguished between missing outer rings (MORs) and missing inner rings (MIRs) and analysed the possible causes of both. Main results: We determined an average of 8.8% total missing rings (MRs) for these long-lived trees, with a maximum of 96 MRs in a series of over 500. We have tried to establish a tree-ring chronology on Gran Canaria Island, also having the tree-ring series from Inagua site, but the long individual tree-ring series analysed do not crossdate between them. Research highlights: We consider the Canary pine a species hard to conducting dendroecological studies, especially if the samples come from managed old trees, in which a large amount of known and potentially unknown missing rings can hampered dating. Even knowing the difficulties involved in dendrochronological analyses of P. canariensis, we can confirm that it is a long-lived species, which can grow to over 500 years, and some of whose growth changes could be associated with certain historical and ecological events.

Many missing rings in old Canary pines can be related with age, fires and traditional uses

International Nuclear Information System (INIS)

Génova, M.; Santana, C.; Martínez, B.

2017-01-01

Aim and area of study: In the present paper we estimated the age of four monumental Pinus canariensis of Gran Canaria (Canary Islands, Spain) by means of tree-ring analysis. Many tree-ring series have been accurately studied and many missing rings have been determined. Material and methods: The trees were dead and the samples analysed were big disks. We measured numerous radii and crossdated the individual tree-ring series, paying particular attention to the existence and location of missing rings. We have distinguished between missing outer rings (MORs) and missing inner rings (MIRs) and analysed the possible causes of both. Main results: We determined an average of 8.8% total missing rings (MRs) for these long-lived trees, with a maximum of 96 MRs in a series of over 500. We have tried to establish a tree-ring chronology on Gran Canaria Island, also having the tree-ring series from Inagua site, but the long individual tree-ring series analysed do not crossdate between them. Research highlights: We consider the Canary pine a species hard to conducting dendroecological studies, especially if the samples come from managed old trees, in which a large amount of known and potentially unknown missing rings can hampered dating. Even knowing the difficulties involved in dendrochronological analyses of P. canariensis, we can confirm that it is a long-lived species, which can grow to over 500 years, and some of whose growth changes could be associated with certain historical and ecological events

Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

Science.gov (United States)

Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

2014-10-01

using an excitation frequency of 13.56 MHz with a plasma power density of 0.3 W/cm2. Glass (Corning type Eagle) and mono-crystalline silicon wafer substrates were coated in the same run at a substrate temperature of 185°C. The deposition pressure was 4 mbar and the substrate-electrode distance 20 mm. Mixtures of silane (SiH4), 1% TMB (B(CH3)3) diluted in helium, hydrogen (H2), and carbon dioxide (CO2) gases were used at flow rates of 1.25 - 0.18/0.32/500/0 - 1.07) sccm (standard cubic centimeters per minute) for the deposition of μc-SiOx:H(B) layers. By changing the CO2/SiH4 gas flow rate ratio from 0 to 6, μc-SiOx:H(B) layers with a composition of 0 Beer-Lambert law, as suggested by Ref. [3]. The film thickness d was measured using the step profiler close to the measurement spot of the spectrophotometer. It is important to measure the transmittance T(λ) and the reflectance R(λ) at the same spot on the sample, to avoid inaccuracies in the calculated absorption spectra that arise from non-uniformity of the film thickness and different positions of the reflectance and transmittance minima and maxima in the spectrum [4]. Hard X-ray photoelectron spectroscopy (HAXPES) experiments were conducted at the HiKE end-station [5] on the KMC-1 beamline [6] of the BESSY-II electron storage ring. This end-station is equipped with a Scienta R4000 electron energy analyzer capable of measuring photoelectron kinetic energies up to 10 keV. A pass energy of 200 eV was used for all measurements. Spectra were recorded with a photon energy of 2003 eV using the first and fourth order supplied by a Si(111) double crystal monochromator. The combined analyzer plus beamline resolution is approx. 0.25 eV for spectra taken at both photon energies. The top surface of the sample was electrically grounded for all measurements. The binding energy was calibrated by measuring the 4f spectrum of a grounded Au foil and setting the Au 4f7/2 binding energy equal to 84.00 eV. In SiO2, the inelastic mean

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

Science.gov (United States)

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Effect of chemical disinfectants and accelerated aging on maxillofacial silicone elastomers: An In vitro Study

Directory of Open Access Journals (Sweden)

Anna Serene Babu

2018-01-01

Full Text Available Context: Maxillofacial prostheses need frequent refabrication due to degradation of color and deterioration of physical properties of the elastomer. Aims: This study attempted to evaluate the change in color stability, Shore A hardness, and surface roughness of two maxillofacial silicones, A-2186 and Cosmesil M511, when submitted to chemical disinfection and accelerated aging. Settings and Design: This was a comparative in vitro study. Subjects and Methods: The materials included two silicone elastomers – A-2186 and Cosmesil M511 (Factor II Incorporated – functional intrinsic red pigment and three disinfectants – Fittydent tablet, chlorhexidine gluconate 4%, and neutral soap. The specimens in each group of elastomer were evaluated initially for color, hardness, and surface roughness, which were further divided into subgroups and subjected to disinfection and accelerated aging. The evaluation of color was performed with the help of an ultraviolet reflectance spectrophotometer. Shore A hardness was evaluated using a durometer and surface roughness, with a digital roughness tester followed by scanning electron microscopy analysis. Statistical Analysis Used: Analysis of variance and Tukey's multiple comparison test were used for statistical analysis. Results: Accelerated aging caused a significant decrease in color, increase in Shore A hardness, and variation in surface roughness in both silicone elastomer groups. Chemical disinfection presented significant changes in color and surface roughness whereas no significant effect on Shore hardness, irrespective of the disinfectant used. Conclusions: The maxillofacial silicone elastomers presented deterioration in color, hardening, and significant variations in surface roughness when subjected to chemical disinfection and accelerated aging, which provides a valid baseline for future research.

Nitrile/Buna N Material Failure Assessment for an O-Ring used on the Gaseous Hydrogen Flow Control Valve (FCV) of the Space Shuttle Main Engine

Science.gov (United States)

Wingard, Doug

2006-01-01

After the rollout of Space Shuttle Discovery in April 2005 in preparation for return-to-flight, there was a failure of the Orbiter (OV-103) helium signature leak test in the gaseous hydrogen (GH2) system. Leakage was attributed to the Flow Control Valve (FCV) in Main Engine 3. The FCV determined to be the source of the leak for OV-103 is designated as LV-58. The nitrile/Buna N rubber O-ring seal was removed from LV-58, and failure analysis indicated radial cracks providing leak paths in one quadrant. Cracks were eventually found in 6 of 9 FCV O-rings among the three Shuttle Orbiters, though none were as severe as those for LV-58, OV-103. Testing by EM10 at MSFC on all 9 FCV O- rings included: laser dimensional, Shore A hardness and properties from a dynamic mechanical analyzer (DMA) and an Instron tensile machine. The following test data was obtained on the cracked quadrant of the LV-58, OV-103 O-ring: (1) the estimated compression set was only 9.5%, compared to none for the rest of the O-ring; (2) Shore A hardness for the O.D. was higher by almost 4 durometer points than for the rest of the O-ring; and (3) DMA data showed that the storage/elastic modulus E was almost 25% lower than for the rest of the O-ring. Of the 8 FCV O-rings tested on an Instron, 4 yielded tensile strengths that were below the MIL spec requirement of 1350 psi-a likely influence of rubber cracking. Comparisons were made between values of modulus determined by DNA (elastic) and Instron (Young s). Each nitrile/Buna N O-ring used in the FCV conforms to the MIL-P-25732C specification. A number of such O-rings taken from shelf storage at MSFC and Kennedy Space Center (KSC) were used to generate a reference curve of DMA glass transition temperature (Tg) vs. shelf storage time ranging from 8 to 26 years. A similar reference curve of TGA onset temperature (of rubber weight loss) vs. shelf storage time was also generated. The DMA and TGA data for the used FCV O-rings were compared to the reference

Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

Energy Technology Data Exchange (ETDEWEB)

Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Samha, Hussein; Linford, Matthew R.

2013-09-25

We report the XPS characterization of a thin film of Al2O3 (35 nm) deposited via e-beam evaporation onto silicon (100). The film was characterized with monochromatic Al Ka radiation. An XPS survey scan, an Al 2p narrow scan, and the valence band spectrum were collected. The Al2O3 thin film is used as a diffusion barrier layer for templated carbon nanotube (CNT) growth in the preparation of microfabricated thin layer chromatography plates.

Aggregation performance of CdO grains grown on surface of N silicon crystal

International Nuclear Information System (INIS)

Zhang Jizhong; Zhao Huan

2010-01-01

Four kinds of aggregation patterns of CdO grains were formed on the surface of N silicon substrate heated at 580 deg. C for 1 h in an evaporation-deposition device. They were ellipse-shaped or quasi-circular-shaped aggregate, long ribbon-shaped aggregate, long chain-shaped or long double-chain-shaped aggregate, and long ellipse-chain-shaped aggregate. These aggregates consisted of numerous grains or tiny crystals, and deposited on top of the CdO bush-like long crystal clusters grown earlier. They exhibited clearly spontaneous self-organization aggregation performance. Surface defects of the virgin N silicon crystal were analyzed, and mechanism of the self-organization aggregation was discussed with a defect induced aggregation (DIA) model.

Silicon germanium as a novel mask for silicon deep reactive ion etching

KAUST Repository

Serry, Mohamed Y.

2013-10-01

This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

Thermo-Optic Characterization of Silicon Nitride Resonators for Cryogenic Photonic Circuits

NARCIS (Netherlands)

Elshaari, A.W.A.; Esmaeil Zadeh, I.; Jöns, K.D.; Zwiller, Val

2016-01-01

In this paper, we characterize the Thermo-optic properties of silicon nitride ring resonators between 18 and 300 K. The Thermo-optic coefficients of the silicon nitride core and the oxide cladding are measured by studying the temperature dependence of the resonance wavelengths. The resonant modes

Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Becker, C.; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Haenel, T.; Lee, K.Y.; Rau, B.; Ruske, F.; Weber, T.; Gall, S.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie (formerly Hahn-Meitner-Institut Berlin), Kekulestr. 5, D-12489 Berlin (Germany); Berginski, M.; Huepkes, J. [Institute of Photovoltaics, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)

2009-06-15

The suitability of ZnO:Al thin films for polycrystalline silicon (poly-Si) thin-film solar cell fabrication was investigated. The electrical and optical properties of 700 -nm-thick ZnO:Al films on glass were analyzed after typical annealing steps occurring during poly-Si film preparation. If the ZnO:Al layer is covered by a 30 nm thin silicon film, the initial sheet resistance of ZnO:Al drops from 4.2 to 2.2 {omega} after 22 h annealing at 600 C and only slightly increases for a 200 s heat treatment at 900 C. A thin-film solar cell concept consisting of poly-Si films on ZnO:Al coated glass is introduced. First solar cell results will be presented using absorber layers either prepared by solid-phase crystallization (SPC) or by direct deposition at 600 C. (author)

Ring-patterned plasmonic photonic crystal thermal light source for miniaturized near-infrared spectrometers

Science.gov (United States)

Labib, Shady R.; Elsayed, Ahmed A.; Sabry, Yasser M.; Khalil, Diaa

2018-02-01

There is a growing number of spectroscopy applications in the near-infrared (NIR) range including gas sensing, food analysis, pharmaceutical and industrial applications that requires highly efficient, more compact and low-cost miniaturized spectrometers. One of the key components for such systems is the wideband light source that can be fabricated using Silicon technology and hence integrated with other components on the same chip. In this work, we report a ring-patterned plasmonic photonic crystal (PC) thermal light source for miniaturized near-infrared spectrometers. The design is based on silicon and tuned to achieve wavelength selectivity in the emitted spectrum. The design is optimized by using Rigorous Coupled-Wave Analysis (RCWA) simulation, which is used to compute the power reflectance and transmittance that are used to predict the emissivity of the structure. The design consists of a PC of silicon rings coated with platinum. The period of the structure is about 2 μm and the silicon is highly-doped with n-type doping level in the order of 1019-1020 cm-3 to enhance the free-carrier absorption. The ring etching depth, diameter and shell thickness are optimized to increase its emissivity within a specific wavelength range of interest. The simulation results show an emissivity exceeding 0.9 in the NIR range up to 2.5 μm, while the emissivity is decreased significantly for longer wavelengths suppressing the emission out of the range of interest, and hence increasing the efficiency for the source. The reported results open the door for black body radiation engineering in integrated silicon sources for spectrometer miniaturization.

Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2

International Nuclear Information System (INIS)

Daldosso, N.; Dalba, G.; Fornasini, P.; Grisenti, R.; Pavesi, L.; Luppi, M.; Magri, R.; Ossicini, S.; Degoli, E.; Rocca, F.; Boninelli, S.; Priolo, F.; Spinella, C.; Iacona, F.

2003-01-01

Light-emitting silicon nanocrystals embedded in SiO 2 have been investigated by x-ray absorption measurements in total electron and photoluminescence yields, by energy filtered transmission electron microscopy and by ab initio total energy calculations. Both experimental and theoretical results show that the interface between the silicon nanocrystals and the surrounding SiO 2 is not sharp: an intermediate region of amorphous nature and variable composition links the crystalline Si with the amorphous stoichiometric SiO 2 . This region plays an active role in the light-emission process

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Role of guard rings in improving the performance of silicon detectors

Indian Academy of Sciences (India)

number of free charge carriers thus produced is proportional to the energy deposited. 259 .... grounding the innermost guard ring of a strip detector of geometry 60 × 60 mm2. ... The guard ring was kept floating with no electrical connection .... ment of maintaining high-quality semiconductor properties during high temperature.

The structural properties of flower-like ZnO nanostructures on porous silicon

Science.gov (United States)

Eswar, Kevin Alvin; Suhaimi, Mohd Husairi Fadzillah; Guliling, Muliyadi; Mohamad, Maryam; Khusaimi, Zuraida; Rusop, M.; Abdullah, Saifollah

2018-05-01

The flower-like zinc oxide (ZnO) were successfully synthesized on porous silicon (PSi) via hydrothermal method. The characteristic of ZnO nanostructures was investigated using field emission scanning microscopy (FESEM) and X-ray diffraction (X-Ray). The FESEM images show the flower-like ZnO nanostructures composed ZnO nanoparticles. The X-ray diffraction shows that strong intensity of (100), (002) and (101) peaks. The structural analysis revealed that the peaks angles were shifted due to the stress or imperfection of the crystalline of ZnO nanostructures. The crystalline sizes in range of 42.60 to 54.09 nm were produced.

Coordination of {Mo142} Ring to La3+ Provides Elliptical {Mo134La10} Ring with a Variety of Coordination Modes

Directory of Open Access Journals (Sweden)

Eri Ishikawa

2009-12-01

Full Text Available A28-electron reduced C2h-Mo-blue 34Ǻ outer ring diameter circular ring, [Mo142O429H10(H2O49(CH3CO25(C2H5CO2]30- (≡{Mo142(CH3CO25(C2H5CO2} comprising eight carboxylate-coordinated (with disorder {Mo2} linkers and six defect pockets in two inner rings (four and three for each, respectively, reacts with La3+ in aqueous solutions at pH 3.5 to yield a 28-electron reduced elliptical Ci-Mo-blue ring of formula [Mo134O416H20(H2O46{La(H2O5}4{La(H2O7}4{LaCl2(H2O5}2]10- (≡{Mo134La10}, isolated as the Na10[Mo134O416H20(H2O46{La(H2O5}4{La(H2O7}4{LaCl2(H2O5}2]·144 H2O Na+ salt. The elliptical structure of {Mo134La10} showing 36 and 31 Å long and short axes for the outer ring diameters is attributed to four (A-D modes of LaO9/LaO7Cl2 tricapped-trigonal-prismatic coordination (TTP geometries. Two different LaO2(H2O7 and one LaO2(H2O2Cl2 TTP geometries (as A-C modes for each of two inner rings result from the coordination of all three defect pockets of the inner ring for {Mo142(CH3CO25(C2H5CO2}, and two LaO4(H2O5 TTP geometries (as D mode result from the displacement of two (acetate/propionate-coordinated binuclear {Mo2} linkers with La3+ in each inner ring. The isothermal titration calorimetry (ITC of the ring modification from circle to ellipsoid, showing the endothermic reaction of [La3+]/[{Mo142(CH3CO25(C2H5CO2}] = 6/1 with DH = 22 kJ×mol-1, DS = 172 J×K-1×mol-1, DG = −28 kJ×mol-1, and K = 9.9 ´ 104 M-1 at 293 K, leads to the conclusion that the coordination of the defect pockets to La3+ precedes the replacement of the {Mo2} linkers with La3+. 139La- NMR spectrometry of the coordination of {Mo142(CH3CO25(C2H5CO2} ring to La3+ is also discussed.

Reliability assessment of ultra-thin HfO{sub 2} films deposited on silicon wafer

Energy Technology Data Exchange (ETDEWEB)

Fu, Wei-En [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Chang, Chia-Wei [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Chang, Yong-Qing [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Yao, Chih-Kai [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Liao, Jiunn-Der, E-mail: jdliao@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)

2012-09-01

Highlights: Black-Right-Pointing-Pointer Nano-mechanical properties on annealed ultra-thin HfO{sub 2} film are studied. Black-Right-Pointing-Pointer By AFM analysis, hardness of the crystallized HfO{sub 2} film significantly increases. Black-Right-Pointing-Pointer By nano-indention, the film hardness increases with less contact stiffness. Black-Right-Pointing-Pointer Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO{sub 2}) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO{sub 2} films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO{sub 2} films deposited on silicon wafers (HfO{sub 2}/SiO{sub 2}/Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO{sub 2} (nominal thickness Almost-Equal-To 10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO{sub 2} phases for the atomic layer deposited HfO{sub 2}. The HfSi{sub x}O{sub y} complex formed at the interface between HfO{sub 2} and SiO{sub 2}/Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO{sub 2} film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically

Assessment of early-age cracking of high-performance concrete in restrained ring specimens

Directory of Open Access Journals (Sweden)

Quang-phu Nguyen

2010-03-01

Full Text Available High-performance concrete (HPC is stronger and more durable than conventional concrete. However, shrinkage and shrinkage cracking are common phenomena in HPC, especially early-age cracking. This study assessed early-age cracking of HPC for two mixtures using restrained ring tests. The two mixtures were produced with water/binder mass ratio (mW/mB of 0.22 and 0.40, respectively. The results show that, with greater steel thickness, the higher degree of restraint resulted in a higher interface pressure and earlier cracking. With steel thickness of 6 mm, 19 mm, and 30 mm, the age of cracking were, respectively, 12 days, 8 days, and 5.4 days with the mW/mB = 0.22 mixture; and 22.5 days, 12.6 days, and 7.1 days with the mW/mB = 0.40 mixture. Cases of the same steel thickness show that the ring specimens with a thicker concrete wall crack later. With the mW/mB = 0.22 mixture, concrete walls with thicknesses of 37.5 mm, 75 mm, and 112.5 mm cracked at 3.4 days, 8.0 days, and 9.8 days, respectively; with the mW/mB = 0.40 mixture, the ages of cracking were 7.1 days, 12.6 days, and 16.0 days, respectively.

400 years of summer climatic conditions in the N Carpathian Mts. (eastern Europe) based on O and C stable isotopes in Pinus Cembra L tree rings

Science.gov (United States)

Nagavciuc, Viorica; Popa, Ionel; Kern, Zoltán; Persoiu, Aurel

2016-04-01

For a better understanding of how the climate is changing and how the environment responds to these changes, it is necessary to understand how the climate has varied in the past. Romania's virgin forests have a great potential to obtain long tree-ring chronologies with annual resolution; but so far, only a few studies resulted in quantitative paleoclimatic reconstructions. In this context, the aim of this study is 1) to calibrate the relationship between the stable isotopes of oxygen and carbon in tree rings and the main climatic parameters and determine the potential of Pinus cembra (Cǎlimani Mts., N Romania, Eastern Europe) for paleoclimatic reconstructions; 2) to provide the first palaeoclimatic reconstitution in Romania based on the isotopic composition of oxygen and carbon in tree ring cellulose, and 3) to test the hypothesis that nearby sulphur mines have not altered the climatic signal recorded by the stable isotopic composition of tree rings, contrary to the similar signal recorded by TRW. For this study, we have analysed wood samples of Swiss stone pine (Pinus cembra L.) from living and dead trees from Cǎlimani Mts., NE Romania, aged between 1600 and 2012 AD. The isotopic composition of oxygen and carbon from the cellulose was analysed at the Institute for Geological and Geochemical Research, Budapest, Hungary, using a high-temperature pyrolysis system (Thermo Quest TC-EA) coupled to an isotope ratio mass spectrometer (Thermo Finningan Delta V) following a ring by ring (i.e., non-pooled) approach. The average level of δ18O and δ13C in cellulose for the period 1600-2012 was 28.83‰ and -22.63 ‰. The tree ring cellulose δ18O and δ13C values showed a strong positive correlation with maximum air temperature (r = 0.6 for δ18O and r = 0.5 for δ13C), mean temperature (r = 0.6 for δ18O and r = 0.45 for δ13C), and sunshine duration (r = 0.69 for δ18O) and negatively correlated with precipitation amount (r = -0.5 for δ18O and r = 0.3 for δ13C) and

Cascadability of Silicon Microring Resonators for40-Gbit/s OOK and DPSK Optical Signals

DEFF Research Database (Denmark)

Ozolins, Oskars; An, Yi; Lali-Dastjerdi, Zohreh

2012-01-01

The cascadability of a single silicon micro-ring resonator for CSRZ-OOK and CSRZ-DPSK signals is experimentally demonstrated at 40 Gbit/s for the first time. Error-free performance is obtained for both modulation formats after 5 cascaded resonators.......The cascadability of a single silicon micro-ring resonator for CSRZ-OOK and CSRZ-DPSK signals is experimentally demonstrated at 40 Gbit/s for the first time. Error-free performance is obtained for both modulation formats after 5 cascaded resonators....

End-functional silicone coupling agent modified PEO/P(VDF-HFP)/SiO2 nanocomposite polymer electrolyte DSSC

International Nuclear Information System (INIS)

Zhang Jing; Yang Ying; Wu Sujuan; Xu Sheng; Zhou Conghua; Hu Hao; Chen Bolei; Xiong Xiaodong; Sebo, Bobby; Han Hongwei; Zhao Xingzhong

2008-01-01

The end-functional silicone coupling agent (dodecyl-trimethoxysilane, DTMS for short) was used to modify the PEO/P(VDF-HFP)/SiO 2 nanocomposite polymer electrolyte (CPE) and the different amounts of DTMS modification effects were studied. The experiments showed the silicone coupling agent with hydrophobic alkyl chains (-C 12 H 25 ) chemically engineered on the SiO 2 nanoparticles, and formed a Si-O-Si cross-linked network in the new nanocomposite polymer electrolyte. Proper content of DTMS modified CPE exhibited improved ionic conductivity and the connection with the photoanode and counter electrode. However, much higher content of the DTMS modification changed the conformation of the polymer network and reduced the ionic movement. Compared with the performance (3.84%) of the original DSSC, the DSSC with functional silicone coupling agent modified CPE (DTMS:SiO 2 = 2:1, mol ratio) exhibited improved J sc (7.94 mA cm -2 ), V oc (0.624 V) and optimal efficiency (5.2%) (measured at AM1.5, light intensity of 58.4 mW cm -2 ). The V oc of the silicone coupling agent modified polymer electrolyte DSSC is obviously improved, which is mainly due to that the hydrophobic alkyl chain end groups formed an insulating layer that retarded the electron recombination at the TiO 2 nanoporous photoanode/polymer electrolyte interface. The DTMS:SiO 2 = 2:1 modified CPE type DSSC exhibited a performance of 6.42% at a light intensity of 32.1 mW cm -2 and 4.94% at 99.2 mW cm -2

Ballistic Transport: After the Cassini Grand Finale, is there a Final Consensus on Ring Origin and Age?

Science.gov (United States)

Estrada, P. R.; Durisen, R. H.; Cuzzi, J. N.

2017-12-01

As the Cassini mission comes to its much anticipated end, somewhat befittingly to be immortalized and enshrined for all time within the gaseous confines of a planet named for the Greek god of time (Kronos), we find the time appropriate to return to the subject of ring age and origin. During Cassini's remarkable tenure, important measurements have been obtained that can help to elucidate and perhaps settle the debate once and for all on whether the rings are young or old. At the forefront lie the results of the Cassini Dust Analyzer (CDA) experiment which indicate that the range of the micrometeoroid flux at infinity for Saturn are comparable to the nominal value of the meteoroid flux value currently adopted for use in ballistic transport (BT) applications and models (Estrada et al., 2015, 2017). Moreover, the source of the micrometeoroid flux has been localized to the Edgeworth-Kuiper Belt (EKB) and is not cometary in origin as previously assumed (Altobelli et al., 2015). A major consequence of these measurements is that the EKB flux is much more gravitationally focused increasing the impact flux on the rings by a factor of ˜25 relative to cometary. This implies that the process of micrometeoroid bombardment and BT is likely even more influential in the rings' structural and compositional evolution over time. This measurement taken together with recent analysis of the bulk mass fraction of non-icy constituents (Zhang et al., 2017a,b) using Cassini radiometry data argue strongly for young rings. Another observation that will help to provide a constraint (though not absolute) is the pending measurement of the (B) ring mass. A high mass estimate as argued by some does not necessarily mean old rings, whereas a low mass ring would certainly imply as much. There are several factors that can offer insight on to the age of the rings from BT modeling, such as saturation of the ramp(s), color differences across the B-C (A-CD) boundaries, color differences across plateaus

Electrochemical performance and structure evolution of core-shell nano-ring α-Fe_2O_3@Carbon anodes for lithium-ion batteries

International Nuclear Information System (INIS)

Sun, Yan-Hui; Liu, Shan; Zhou, Feng-Chen; Nan, Jun-Min

2016-01-01

Core-shell nano-ring α-Fe_2O_3@Carbon (CSNR) composites with different carbon content (CSNR-5%C and CSNR-13%C) are synthesized using a hydrothermal method by controlling different amounts of glucose and α-Fe_2O_3 nano-rings with further annealing. The CSNR electrodes exhibit much improved specific capacity, cycling stability and rate capability compared with that of bare nano-ring α-Fe_2O_3 (BNR), which is attributed to the core-shell nano-ring structure of CSNR. The carbon shell in the inner and outer surface of CSNR composite can increase electron conductivity of the electrode and inhibit the volume change of α-Fe_2O_3 during discharge/charge processes, and the nano-ring structure of CSNR can buffer the volume change too. The CSNR-5%C electrode shows super high initial discharge/charge capacities of 1570/1220 mAh g"−"1 and retains 920/897 mAh g"−"1 after 200 cycles at 500 mA g"−"1 (0.5C). Even at 2000 mA g"−"1 (2C), the electrode delivers the initial capacities of 1400/900 mAh g"−"1, and still maintains 630/610 mAh g"−"1 after 200 cycles. The core-shell nano-rings opened during cycling and rebuilt a new flower-like structure consisting of α-Fe_2O_3@Carbon nano-sheets. The space among the nano-sheet networks can further buffer the volume expansion of α-Fe_2O_3 and facilitate the transportation of electrons and Li"+ ions during the charge/discharge processes, which increases the capacity and rate capability of the electrode. It is the first time that the evolution of core-shell α-Fe_2O_3@Carbon changing to flower-like networks during lithiation/de-lithiation has been reported.

Electrochemical performance and structure evolution of core-shell nano-ring α-Fe2O3@Carbon anodes for lithium-ion batteries

Science.gov (United States)

Sun, Yan-Hui; Liu, Shan; Zhou, Feng-Chen; Nan, Jun-Min

2016-12-01

Core-shell nano-ring α-Fe2O3@Carbon (CSNR) composites with different carbon content (CSNR-5%C and CSNR-13%C) are synthesized using a hydrothermal method by controlling different amounts of glucose and α-Fe2O3 nano-rings with further annealing. The CSNR electrodes exhibit much improved specific capacity, cycling stability and rate capability compared with that of bare nano-ring α-Fe2O3 (BNR), which is attributed to the core-shell nano-ring structure of CSNR. The carbon shell in the inner and outer surface of CSNR composite can increase electron conductivity of the electrode and inhibit the volume change of α-Fe2O3 during discharge/charge processes, and the nano-ring structure of CSNR can buffer the volume change too. The CSNR-5%C electrode shows super high initial discharge/charge capacities of 1570/1220 mAh g-1 and retains 920/897 mAh g-1 after 200 cycles at 500 mA g-1 (0.5C). Even at 2000 mA g-1 (2C), the electrode delivers the initial capacities of 1400/900 mAh g-1, and still maintains 630/610 mAh g-1 after 200 cycles. The core-shell nano-rings opened during cycling and rebuilt a new flower-like structure consisting of α-Fe2O3@Carbon nano-sheets. The space among the nano-sheet networks can further buffer the volume expansion of α-Fe2O3 and facilitate the transportation of electrons and Li+ ions during the charge/discharge processes, which increases the capacity and rate capability of the electrode. It is the first time that the evolution of core-shell α-Fe2O3@Carbon changing to flower-like networks during lithiation/de-lithiation has been reported.

Hydroclimate variability in southwestern Japan over the last 1500 years reconstructed from oxygen isotope ratios in tree rings

Science.gov (United States)

Sano, Masaki; Yasue, Koh; Kimura, Katsuhiko; Nakatsuka, Takeshi

2015-04-01

Recent progress in isotope dendroclimatology indicates that tree-ring δ18O is a promising proxy to precisely reconstruct hydroclimate variability in monsoon Asia. Here we present a 1500-year-long tree-ring δ18O chronology constructed using living and fallen dead trees (Cryptomeria japonia) that were collected in Yakushima Island, southwestern Japan. Core or disc samples were cross-dated by visually matching ring-width patterns. Then, a total of 14 trees were selected for isotopic analysis. We employed the 'plate method' to extract cellulose directly from a 1.0-mm thick wood plate, in order to facilitate the processing of hundreds of rings simultaneously. Each annual ring of cellulose was separated using a razor blade, and its δ18O value was determined using a continuous flow isotope ratio mass spectrometer coupled to an elemental analyzer. The resultant δ18O time series were highly correlated with one another (Rbar: 0.66), indicating that common signals related to regional climate are preserved in all the sampled trees. Since the δ18O series did not show prominent age-related trends, all the series were simply normalized to have the same mean for the overlapping segments. The resulting series were then averaged to build the final chronology. Response analysis with ambient meteorological records for the last 50 years indicates that tree-ring δ18O is mainly controlled by summer (May-September) relative humidity. We therefore interpret our record as a proxy of hydroclimate related to East Asian summer monsoon. Overall low-frequency variations in our chronology are similar to those of a Northern Hemisphere temperature reconstruction. Specifically our record shows a relatively dry (wet) condition during the Medieval Warm Period (the Little Ice Age). Centennial-scale fluctuations of sea surface temperatures in the equatorial Pacific may play a role in modulating long-term hydroclimate changes in southwestern Japan.

Growth of (100)-highly textured BaBiO{sub 3} thin films on silicon

Energy Technology Data Exchange (ETDEWEB)

Ferreyra, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires (Argentina); Marchini, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Granell, P. [INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Golmar, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, 1650 San Martín, Buenos Aires (Argentina); Albornoz, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); and others

2016-08-01

We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO{sub 3} thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO{sub 2} buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO{sub 3} films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. - Highlights: • BaBiO{sub 3} thin films were grown on Si substrates and characterized. • Films prepared using optimized conditions are highly textured in the (100) direction. • The absence of in-plane texture was demonstrated by X-ray diffraction. • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

Formation of ring-patterned nanoclusters by laser–plume interaction

International Nuclear Information System (INIS)

Sivayoganathan, Mugunthan; Tan Bo; Venkatakrishnan, Krishnan

2013-01-01

This article reports for the first time a unique study performed to regulate the ring diameter of nanoclusters fabricated during femtosecond laser ablation of solids and a mechanism is proposed for the formation of those ring clusters. The ring nanoclusters are made out of nanoparticles with a range of 10–30 nm. Our experimental studies showed the synthesis of ring nanoclusters with random diameter distribution on metals, nonmetals, and semiconductors, such as titanium, aluminum, glasses, ceramics, graphite, and silicon. To regulate the ring size, the effects of laser parameters, such as wavelength, pulse duration, pulse energy, and repetition rate on the ring diameter are analyzed. The influence of ablated materials and the background gas on ring size is also elaborated in this article. The motion of plume species under the influence of ponderomotive force on free electrons possibly played a key role in the formation of the ring-patterned nanoclusters. This study could help to understand the fundamentals in laser ablative nanosynthesis as well as to produce nanostructures with organized ring diameter that controls the density and porosity of those 3D nanostructures.

Impurities of oxygen in silicon

International Nuclear Information System (INIS)

Gomes, V.M.S.

1985-01-01

The electronic structure of oxygen complex defects in silicon, using molecular cluster model with saturation by watson sphere into the formalism of Xα multiple scattering method is studied. A systematic study of the simulation of perfect silicon crystal and an analysis of the increasing of atom number in the clusters are done to choose the suitable cluster for the calculations. The divacancy in three charge states (Si:V 2 + , Si:V 2 0 , Si:V 2 - ), of the oxygen pair (Si:O 2 ) and the oxygen-vacancy pair (Si:O.V) neighbours in the silicon lattice, is studied. Distortions for the symmetry were included in the Si:V 2 + and Si:O 2 systems. The behavior of defect levels related to the cluster size of Si:V 2 0 and Si:O 2 systems, the insulated oxygen impurity of silicon in interstitial position (Si:O i ), and the complexes involving four oxygen atoms are analysed. (M.C.K.) [pt

Annealing behavior of oxygen in-diffusion from SiO2 film to silicon substrate

International Nuclear Information System (INIS)

Abe, T.; Yamada-Kaneta, H.

2004-01-01

Diffusion behavior of oxygen at (near) the Si/SiO 2 interface was investigated. We first oxidized the floating-zone-grown silicon substrates, and then annealed the SiO 2 -covered substrates in an argon ambient. We examined two different conditions for oxidation: wet and dry oxidation. By the secondary-ion-mass spectrometry, we measured the depth profiles of the oxygen in-diffusion of these heat-treated silicon substrates: We found that the energy of dissolution (in-diffusion) of an oxygen atom that dominates the oxygen concentration at the Si/SiO 2 interface depends on the oxidation condition: 2.0 and 1.7 eV for wet and dry oxidation, respectively. We also found that the barrier heights for the oxygen diffusion in argon anneal were significantly different for different ambients adopted for the SiO 2 formation: 3.3 and 1.8 eV for wet and dry oxidation, respectively. These findings suggest that the microscopic behavior of the oxygen atoms at the Si/SiO 2 interface during the argon anneal depends on the ambient adopted for the SiO 2 formation

A safety and pharmacokinetic trial assessing delivery of dapivirine from a vaginal ring in healthy women.

Science.gov (United States)

Nel, Annalene; Haazen, Wouter; Nuttall, Jeremy; Romano, Joseph; Rosenberg, Zeda; van Niekerk, Neliëtte

2014-06-19

Women-initiated HIV-prevention products are urgently needed. To address this need, a trial was conducted to assess the safety and pharmacokinetics of a silicone elastomer matrix vaginal ring containing 25 mg of the antiretroviral drug dapivirine when used continuously for 28 consecutive days. A double-blind, randomized, placebo-controlled trial was conducted in 16 healthy, HIV-negative women, 18-40 years of age, who were randomized 1:1 to use either the active or matching placebo ring for 28 days. Participants were followed during and for 28 days after ring use for safety and pharmacokinetic evaluations. The dapivirine vaginal ring was safe and well tolerated with no differences in safety endpoints between the active and placebo ring. The concentration-time plots of dapivirine in vaginal fluid were indicative of a sustained release of dapivirine over the 28 days of use. Dapivirine vaginal fluid concentrations were highest near the ring, followed by the cervix and introïtus (mean Cmax of 80, 67 and 31 μg/g, respectively). Vaginal fluid concentrations of dapivirine on the day of ring removal (day 28) at all three collection sites exceeded by more than 3900-fold the IC99 for dapivirine in a tissue explant infection model. Plasma dapivirine concentrations were low (dapivirine vaginal ring has a safety and pharmacokinetic profile that supports its use as a sustained-release topical microbicide for HIV-1 prevention in women.

Integrated optics ring-resonator chemical sensor for detection of air contamination

Science.gov (United States)

Manfreda, A. M.; Homer, M. L.; Ksendzov, A.

2004-01-01

We report a silicon nitride-based ring resonator chemical sensor with sensing polymer coating. Its sensitivity to isopropanol in air is at least 50 ppm - well under the permissible exposure level of 400 ppm.

Intregrated optics ring-resonator chemical sensor for detection of air contamination

Science.gov (United States)

Ksendzov, Alexander; Homer, Margie L.; Manfreda, Allison M.

2004-01-01

We report a silicon nitride-based ring resonator chemical sensor with sensing polymer coating. Its sensitivity to isopropanol in air is at least 50 ppm - well under the permissible exposure level of 400 ppm.

Study on leakage rates of high temperature water from wet-type transport casks for spent fuel. Pt. 2. Leakage rates from a scratch on O-ring surface and narrow wires adhering to O-ring surface

International Nuclear Information System (INIS)

Asano, R.; Aritomi, M.; Sudi, A.; Kohketsu, Y.

1997-01-01

A programme for enhancement of fuel burnup has been promoted in Japan as part of the sophisticated programme for light water reactors to reduce the fuel cost and the amount of spent fuel. As part of this fuel programme, a new wet-type transport cask has been developed to transport the high burnup fuels efficiently. The purpose of this work is to clarify the margin of safety in the evaluation of the release rate of radioactive materials from the wet-type transport cask into the environment and to establish a practical evaluation method for leakage rates on leak behaviour of high temperature water from the casks. In this paper, leakage rates of water under high pressures and at high temperatures are investigated from two kinds of leak path model. One is a disc with a scratch on the surface which simulates a defect on the seal surface of the O-ring flange and the other is narrow stainless steel wires installed on the O-ring surface which simulates hair adhering to the O-ring surface. From the results, an evaluation method for the leakage rate of water under high pressure and at high temperature from a non-circular leak path and multiple leak paths is proposed. (author)

Improved Treatment of Photothermal Cancer by Coating TiO2 on Porous Silicon.

Science.gov (United States)

Na, Kil Ju; Park, Gye-Choon

2016-02-01

In present society, the technology in various field has been sharply developed and advanced. In medical technology, especially, photothermal therapy and photodynamic therapy have had limelight for curing cancers and diseases. The study investigates the photothermal therapy that reduces side effects of existing cancer treatment, is applied to only cancer cells, and dose not harm any other normal cells. The photothermal properties of porous silicon for therapy are analyzed in order to destroy cancer cells that are more weak at heat than normal ones. For improving performance of porous silicon, it also analyzes the properties when irradiating the near infrared by heterologously junction TiO2 and TiO2NW, photocatalysts that are very stable and harmless to the environment and the human body, to porous silicon. Each sample of Si, PSi, TiO2/Psi, and TiO2NW/PSi was irradiated with 808 nm near-IR of 300, 500, and 700 mW/cm2 light intensity, where the maximum heating temperature was 43.8, 61.6, 67.9, and 61.9 degrees C at 300 mW/cm2; 54.1, 64.3, 78.8, and 68.9 degrees C at 500 mW/cm2; and 97.3, 102.8, 102.5, and 95 0C at 700 mW/cm2. The time required to reach the maximum temperature was less than 10 min for every case. The results indicate that TiO2/PSi thin film irradiated with a single near-infrared wavelength of 808 nm, which is known to have the best human permeability, offers the potential of being the most successful photothermal cancer therapy agent. It maximizes the photo-thermal characteristics within the shortest time, and minimizes the adverse effects on the human body.

ZnO transparent conductive oxide for thin film silicon solar cells

Science.gov (United States)

Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

2010-03-01

There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide

Science.gov (United States)

Friedrich, D.; Schmidt, B.; Heinig, K. H.; Liedke, B.; Mücklich, A.; Hübner, R.; Wolf, D.; Kölling, S.; Mikolajick, T.

2013-09-01

Sponge-like Si nanostructures embedded in SiO2 were fabricated by spinodal decomposition of sputter-deposited silicon-rich oxide with a stoichiometry close to that of silicon monoxide. After thermal treatment a mean feature size of about 3 nm was found in the phase-separated structure. The structure of the Si-SiO2 nanocomposite was investigated by energy-filtered transmission electron microscopy (EFTEM), EFTEM tomography, and atom probe tomography, which revealed a percolated Si morphology. It was shown that the percolation of the Si network in 3D can also be proven on the basis of 2D EFTEM images by comparison with 3D kinetic Monte Carlo simulations.

Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide

International Nuclear Information System (INIS)

Friedrich, D.; Schmidt, B.; Heinig, K. H.; Liedke, B.; Mücklich, A.; Hübner, R.; Wolf, D.; Kölling, S.; Mikolajick, T.

2013-01-01

Sponge-like Si nanostructures embedded in SiO 2 were fabricated by spinodal decomposition of sputter-deposited silicon-rich oxide with a stoichiometry close to that of silicon monoxide. After thermal treatment a mean feature size of about 3 nm was found in the phase-separated structure. The structure of the Si-SiO 2 nanocomposite was investigated by energy-filtered transmission electron microscopy (EFTEM), EFTEM tomography, and atom probe tomography, which revealed a percolated Si morphology. It was shown that the percolation of the Si network in 3D can also be proven on the basis of 2D EFTEM images by comparison with 3D kinetic Monte Carlo simulations

Silicon Detectors for PET and SPECT

Science.gov (United States)

Cochran, Eric R.

silicon detectors to serve as the electronic collimator in these systems. The second prototype is a high resolution PET system. By inserting a silicon PET ring inside a conventional scintillator PET ring, it has been proposed that both image resolution and system sensitivity can be increased. To investigate these claims, a partial BGO ring with clinical PET dimensions (50 cm inner diameter) has been constructed that can be used to evaluate a variety of system configurations. Initial investigations use two back-to-back high resolution silicon detectors in a 2D geometry with a small (10 cm) field of view. This configuration is used to demonstrate the potential performance of a specialized small animal imaging device for medical research applications. Initial filtered backprojection images of a 22Na point source have shown the spatial resolution of the system to be 950 mum for the pure silicon events, 1.8 mm for the hybrid silicon-BGO events, and 7 mm for the pure BGO events. The performance is consistent with expectations and, as the first real images from this type of device, the results provide motivation to continue the investigation of the high resolution PET concept.

In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Duy Phong Pham

2014-01-01

Full Text Available Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codoped in ZnO film (IGZO to improve the film optoelectronic properties. A wide range of Ga and In contents in sputtering targets was explored to find optimum optical and electrical properties of deposited films. The results show that an appropriate combination of In and Ga atoms in ZnO material, followed by in-air thermal annealing process, can enhance the crystallization, conductivity, and transmittance of IGZO thin films, which can be well used as front-contact electrodes in thin film silicon solar cells.

Energy transfer between energetic ring current H(+) and O(+) by electromagnetic ion cyclotron waves

Science.gov (United States)

Thorne, Richard M.; Horne, Richard B.

1994-01-01

Electromagnetic ion cyclotron (EMIC) waves in the frequency range below the helium gyrofrequency can be excited in the equatorial region of the outer magnetosphere by cyclotron resonant instability with anisotropic ring current H(+) ions. As the unducted waves propagate to higher latitudes, the wave normal should become highly inclined to the ambient magnetic field. Under such conditions, wave energy can be absorbed by cyclotron resonant interactions with ambient O(+), leading to ion heating perpendicular to the ambient magnetic field. Resonant wave absorption peaks in the vicinity of the bi-ion frequency and the second harmonic of the O(+) gyrofrequrency. This absorption should mainly occur at latitudes between 10 deg and 30 deg along auroral field lines (L is greater than or equal to 7) in the postnoon sector. The concomitant ion heating perpendicular to the ambient magnetic field can contribute to the isotropization and geomagnetic trapping of collapsed O(+) ion conics (or beams) that originate from a low-altitude ionospheric source region. During geomagnetic storms when the O(+) content of the magnetosphere is significantly enhanced, the absorption of EMIC waves should become more efficient, and it may contribute to the observed acceleration of O(+) ions of ionospheric origin up to ring current energies.

Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

International Nuclear Information System (INIS)

Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

2007-01-01

The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

Science.gov (United States)

Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

2018-02-01

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

Effect of different types of disinfection solution and aging on the hardness and colour stability of maxillofacial silicone elastomers.

Science.gov (United States)

Cevik, Pinar; Yildirim-Bicer, Arzu Z

2017-11-09

Understanding the effect of aging and different disinfecting agents on the physical properties of pigmented maxillofacial silicones may help eliminate the current uncertainty as to the best follow-up suggestions for the patients treated with silicone prostheses. One hundred fifty specimens (14 × 2 mm) were evaluated for colour and 75 specimens (30 × 10 mm) for hardness (total, 225 specimens). Five specimens were used for hardness testing in each disinfecting solution while 10 silicone specimens were used for colour evaluation. The samples were separated into 5 groups and the initial hardness and colour evaluations were performed and placed in disinfectant solution (neutral soap, effervescent tablet, 0.2% chlorhexidine, 4% chlorhexidine, sodium hypochlorite). A second set of colour and hardness measurements was taken after 48 hours of disinfection and 1,008 hours of artificial aging in a QUV-accelerated weathering tester. Two-way and 1-way analysis of variance with Tukey tests and paired t-test were used for statistical analysis (α = 0.05). Before artificial aging, the hardness value of the red pigment group was found to be significantly lower than that of the brown pigment group. After aging, the lowest Shore A value was seen in the neutral soap group, while the highest was seen in the effervescent tablet. Based on the results of this study, chlorohexidine 0.2% was found to be most suitable agent for disinfection of the prostheses. Washing with neutral soap caused loss of pigment from the surface of the silicones. Sodium hypochlorite was found to have a colour-fading effect on silicone specimens.

Spiral silicon drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

1988-01-01

An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

Operating characteristics of radiation-hardened silicon pixel detectors for the CMS experiment

CERN Document Server

Hyosung, Cho

2002-01-01

The Compact Muon Solenoid (CMS) experiment at the CERN Large Hadron Collider (LHC) will have forward silicon pixel detectors as its innermost tracking device. The pixel devices will be exposed to the harsh radiation environment of the LHC. Prototype silicon pixel detectors have been designed to meet the specification of the CMS experiment. No guard ring is required on the n/sup +/ side, and guard rings on the p/sup +/ side are always kept active before and after type inversion. The whole n/sup +/ side is grounded and connected to readout chips, which greatly simplifies detector assembling and improves the stability of bump-bonded readout chips on the n/sup +/ side. Operating characteristics such as the leakage current, the full depletion voltage, and the potential distributions over guard rings were tested using standard techniques. The tests are discussed in this paper. (9 refs).

Electrical crosstalk in front-illuminated photodiode array with different guard ring designs for medical CT applications

International Nuclear Information System (INIS)

Ji Fan; Juntunen, Mikko; Hietanen, Iiro

2009-01-01

This paper presents electrical crosstalk studies on front-illuminated photodiode arrays for medical computed tomography (CT) applications. Crosstalk is an important factor to the system noise and image quality. The electrical crosstalk depends on silicon substrate properties and photodiode structures. The photodiode samples employed in this paper are planar processed on high-resistivity n-type silicon substrate, resulting in a p+/n-/n+ diode structure. Two types of guard ring structures are designed and applied to the same geometry of two-dimensional photodiode arrays. One structure is an n guard ring in the gap area between pixels, and the other structure is an additional p+ guard ring around each pixel together with the n guard ring. A 10 μm light spot with wavelength of 525 nm is used to scan across the surface of the photodiode array in the electrical crosstalk measurements. The electrical currents of two neighbor pixels are measured and the results are compared between two guard ring designs. The design with the p+ guard ring structure gives better electrical crosstalk suppression. Moreover, the measurement results show much smaller influence on surrounding pixels with the p+ guard ring structure in the case of disconnected pixel. Besides the electrical crosstalk, the light sensitivity within the gap area is also discussed between two guard ring designs.

Synthesis and Characterization of Antireflective ZnO Nanoparticles Coatings Used for Energy Improving Efficiency of Silicone Solar Cells

Science.gov (United States)

Pîslaru-Dǎnescu, Lucian; Chitanu, Elena; El-Leathey, Lucia-Andreea; Marinescu, Virgil; Marin, Dorian; Sbârcea, Beatrice-Gabriela

2018-03-01

The paper proposes a new and complex process for the synthesis of ZnO nanoparticles for antireflective coating corresponding to silicone solar cells applications. The process consists of two major steps: preparation of seed layer and hydrothermal growth of ZnO nanoparticles. Due to the fact that the seed layer morphology influences the ZnO nanoparticles proprieties, the process optimization of the seed layer preparation is necessary. Following the hydrothermal growth of the ZnO nanoparticles, antireflective coating of silicone solar cells is achieved. After determining the functional parameters of the solar cells provided either with glass or with ZnO, it is concluded that all the parameters values are superior in the case of solar cells with ZnO antireflection coating and are increasing along with the solar irradiance.

Liesegang rings in tissue. How to distinguish Liesegang rings from the giant kidney worm, Dioctophyma renale.

Science.gov (United States)

Tuur, S M; Nelson, A M; Gibson, D W; Neafie, R C; Johnson, F B; Mostofi, F K; Connor, D H

1987-08-01

Liesegang rings (LRs) are periodic precipitation zones from supersaturated solutions in colloidal systems. They are formed by a process that involves an interplay of diffusion, nucleation, flocculation or precipitation, and supersaturation. Examples include LRs of calcium carbonate in oölitic limestone (in nature), LRs of silver chromate in gelatin (in vitro), and LRs of glycoprotein in pulmonary corpora amylacea (in vivo). Here we describe LRs in lesions from 29 patients--mostly lesions of the kidney, synovium, conjunctiva, and eyelid. The LRs formed in cysts, or in fibrotic, inflamed, or necrotic tissue. The LRs in this study varied greatly in shape and size, measuring 7-800 microns. Special stains and energy-dispersive radiographic analysis or scanning electron microscopy revealed that some LRs contained calcium, iron (hemosiderin), silicon, and sulfur. Some pathologists have mistaken LRs for eggs, larvae, or adults of the giant kidney worm, Dioctophyma renale. D. renale is a large blood-red nematode that infects a variety of fish-eating mammals, especially mink. Fourteen documented infections of humans have been recorded, usually with adult worms expelled from the urethra. The adult worms are probably the largest helminth to parasitize humans. Eggs of D. renale are constant in size (60-80 microns X 39-47 microns), contain an embryo, and have characteristic sculpturing of the shell. Liesegang rings should not be mistaken for eggs, larvae, or adults of D. renale, or for any other helminth.

Thermodynamics of Boron Removal from Silicon Using CaO-MgO-Al2O3-SiO2 Slags

Science.gov (United States)

Jakobsson, Lars Klemet; Tangstad, Merete

2018-04-01

Slag refining is one of few metallurgical methods for removal of boron from silicon. It is important to know the thermodynamic properties of boron in slags to understand the refining process. The relation of the distribution coefficient of boron to the activity of silica, partial pressure of oxygen, and capacity of slags for boron oxide was investigated. The link between these parameters explains why the distribution coefficient of boron does not change much with changing slag composition. In addition, the thermodynamic properties of dilute boron oxide in CaO-MgO-Al2O3-SiO2 slags was determined. The ratio of the activity coefficient of boron oxide and silica was found to be the most important parameter for understanding changes in the distribution coefficient of boron for different slags. Finally, the relation between the activity coefficient of boron oxide and slag structure was investigated. It was found that the structure can explain how the distribution coefficient of boron changes depending on slag composition.

Climate signal age effects in boreal tree-rings: Lessons to be learned for paleoclimatic reconstructions

Czech Academy of Sciences Publication Activity Database

Konter, O.; Büntgen, Ulf; Carrer, M.; Timonen, M.; Esper, J.

2016-01-01

Roč. 142, JUN (2016), s. 164-172 ISSN 0277-3791 Institutional support: RVO:67179843 Keywords : temperature variability * Age trends * Dendroclimatology * Growth-climate relationships * Maximum latewood density * Northern Scandinavia * Tree-ring width Subject RIV: EH - Ecology, Behaviour Impact factor: 4.797, year: 2016

Annual tree rings in Piptadenia gonoacantha (Mart. J.F.Macbr. in a restoration experiment in the Atlantic Forest: potential for dendroecological research

Directory of Open Access Journals (Sweden)

Arno Fritz das Neves Brandes

2016-01-01

Full Text Available ABSTRACT The tree Piptadenia gonoachantha is widely used in forestry and in forest restoration projects, which require methods for evaluating tree growth. Long-term studies are necessary to determine patterns and detect changes in species growth rhythms. Tree ring analysis provides a precise method for determining age and documenting long-term growth trends in tropical tree species. The present study evaluated the periodicity of tree ring formation and radial growth dynamics of P. gonoachantha from a population of known age in the Poço das Antas Biological Reserve. Two radii from six trees were sampled using non-destructive methods. Tree rings were counted and measured to estimate age and to calculate diametric increment. All samples had 16 tree rings, which matched the known plantation age and confirmed the annual formation of rings. The individuals sampled had a mean annual diametric increment of 9.5 mm / year. Results showed a trend towards decreasing growth rate with increasing age. Individuals of P. gonoachantha in Ombrophilous Dense Forest produce annual tree rings, which holds potential for future dendroecological studies.

Silicon and Germanium (111) Surface Reconstruction

Science.gov (United States)

Hao, You Gong

Silicon (111) surface (7 x 7) reconstruction has been a long standing puzzle. For the last twenty years, various models were put forward to explain this reconstruction, but so far the problem still remains unsolved. Recent ion scattering and channeling (ISC), scanning tunneling microscopy (STM) and transmission electron diffraction (TED) experiments reveal some new results about the surface which greatly help investigators to establish better models. This work proposes a silicon (111) surface reconstruction mechanism, the raising and lowering mechanism which leads to benzene -like ring and flower (raised atom) building units. Based on these building units a (7 x 7) model is proposed, which is capable of explaining the STM and ISC experiment and several others. Furthermore the building units of the model can be used naturally to account for the germanium (111) surface c(2 x 8) reconstruction and other observed structures including (2 x 2), (5 x 5) and (7 x 7) for germanium as well as the (/3 x /3)R30 and (/19 x /19)R23.5 impurity induced structures for silicon, and the higher temperature disordered (1 x 1) structure for silicon. The model is closely related to the silicon (111) surface (2 x 1) reconstruction pi-bonded chain model, which is the most successful model for the reconstruction now. This provides an explanation for the rather low conversion temperature (560K) of the (2 x 1) to the (7 x 7). The model seems to meet some problems in the explanation of the TED result, which is explained very well by the dimer, adatom and stacking fault (DAS) model proposed by Takayanagi. In order to explain the TED result, a variation of the atomic scattering factor is proposed. Comparing the benzene-like ring model with the DAS model, the former needs more work to explain the TED result and the later has to find a way to explain the silicon (111) surface (1 x 1) disorder experiment.

An all-silicon passive optical diode.

Science.gov (United States)

Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

2012-01-27

A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

Effects of accelerated artificial daylight aging on bending strength and bonding of glass fibers in fiber-embedded maxillofacial silicone prostheses.

Science.gov (United States)

Hatamleh, Muhanad M; Watts, David C

2010-07-01

The purpose of this study was to test the effect of different periods of accelerated artificial daylight aging on bond strength of glass fiber bundles embedded into maxillofacial silicone elastomer and on bending strength of the glass fiber bundles. Forty specimens were fabricated by embedding resin-impregnated fiber bundles (1.5-mm diameter, 20-mm long) into maxillofacial silicone elastomer. Specimens were randomly allocated into four groups, and each group was subjected to different periods of accelerated daylight aging as follows (in hours); 0, 200, 400, and 600. The aging cycle included continuous exposure to quartz-filtered visible daylight (irradiance 760 W/m(2)) under an alternating weathering cycle (wet for 18 minutes, dry for 102 minutes). Pull-out tests were performed to evaluate bond strength between fiber bundles and silicone using a universal testing machine at 1 mm/min crosshead speed. Also a three-point bending test was performed to evaluate bending strength of the fiber bundles. One-way ANOVA and Bonferroni post hoc tests were carried out to detect statistical significance (p aging only. After 200 hours of exposure to artificial daylight and moisture conditions, bond strength between glass fibers and heat-cured silicones is optimal, and the bending strength of the glass fiber bundles is enhanced.

Spatial structure of radio frequency ring-shaped magnetized discharge sputtering plasma using two facing ZnO/Al2O3 cylindrical targets for Al-doped ZnO thin film preparation

Directory of Open Access Journals (Sweden)

Takashi Sumiyama

2017-05-01

Full Text Available Spatial structure of high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facing ZnO/Al2O3 cylindrical targets mounted in ring-shaped hollow cathode has been measured and Al-doped ZnO (AZO thin film is deposited without substrate heating. The plasma density has a peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniform with increasing the distance from the target cathode. A low ion current flowing to the substrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 – 6.7×10-4 Ω cm can be prepared at a substrate room temperature. The transmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7 nm at radial positions of r = 0, 15, 30, 40 mm, respectively, while diffraction peak of AZO films is 34.26°. The grains exhibit a preferential orientation along (002 axis.

Enhancement of deposition rate at cryogenic temperature in synchrotron radiation excited deposition of silicon film

International Nuclear Information System (INIS)

Nara, Yasuo; Sugita, Yoshihiro; Ito, Takashi; Kato, Hiroo; Tanaka, Ken-ichiro

1989-01-01

The authors have investigated the synchrotron radiation excited deposition of silicon films on the SiO 2 substrate by using SiH 4 /He mixture gas at BL-12C at Photon Factory. They used VUV light from the multilayer mirror with the center photon energy from 97 to 123eV, which effectively excites L-core electrons of silicon. Substrate temperature was widely varied from -178 degree C to 500 degree C. At -178 degree C, the deposition rate was as high as 400nm/200mAHr (normalized at the storage ring current at 200mA). As increasing the substrate temperature, the deposition rate was drastically decreased. The number of deposited silicon atoms is estimated to be 4 to 50% of incident photons, while the number of photo generated species in the gas phase within the mean free path from the surface is calculated as few as about 10 -3 of incident photons. These experimental results show that the deposition reaction is governed by the dissociation of surface adsorbates by the synchrotron radiation

Improvement in switching characteristics and long-term stability of Zn-O-N thin-film transistors by silicon doping

Directory of Open Access Journals (Sweden)

Hiroshi Tsuji

2017-06-01

Full Text Available The effects of silicon doping on the properties of Zn-O-N (ZnON films and on the device characteristics of ZnON thin-film transistors (TFTs were investigated by co-sputtering silicon and zinc targets. Silicon doping was effective at decreasing the carrier concentration in ZnON films; therefore, the conductivity of the films can be controlled by the addition of a small amount of silicon. Doped silicon atoms also form bonds with nitrogen atoms, which suppresses nitrogen desorption from the films. Furthermore, Si-doped ZnON-TFTs are demonstrated to exhibit less negative threshold voltages, smaller subthreshold swings, and better long-term stability than non-doped ZnON-TFTs.

ring system

African Journals Online (AJOL)

1,3,2-DIAZABORACYCLOALKANE. RING SYSTEM. Negussie Retta" and Robert H. Neilson. 'Department of Chemistry, Addis Ababa University, P.O. Box 1176, Addis Ababa, Ethiopia. Department of Chemistry, Texas Christian University.

Photonic ring resonance is a versatile platform for performing multiplex immunoassays in real time.

Science.gov (United States)

Mudumba, Sasi; de Alba, Sophia; Romero, Randy; Cherwien, Carli; Wu, Alice; Wang, Jue; Gleeson, Martin A; Iqbal, Muzammil; Burlingame, Rufus W

2017-09-01

Photonic ring resonance is a property of light where in certain circumstances specific wavelengths are trapped in a ring resonator. Sensors based on silicon photonic ring resonators function by detecting the interaction between light circulating inside the sensor and matter deposited on the sensor surface. Binding of biological material results in a localized change in refractive index on the sensor surface, which affects the circulating optical field extending beyond the sensor boundary. That is, the resonant wavelength will change when the refractive index of the medium around the ring resonator changes. Ring resonators can be fabricated onto small silicon chips, allowing development of a miniature multiplex array of ring based biosensors. This paper describes the properties of such a system when responding to the refractive index changed in a simple and precise way by changing the ionic strength of the surrounding media, and in a more useful way by the binding of macromolecules to the surface above the resonators. Specifically, a capture immunoassay is described that measures the change of resonant wavelength as a patient serum sample with anti-SS-A autoantibodies is flowed over a chip spotted with SS-A antigen and amplified with anti-IgG. The technology has been miniaturized and etched into a 4×6mm silicon chip that can measure 32 different reactions in quadruplicate simultaneously. The variability between 128 rings on a chip as measured by 2M salt assays averaged 0.6% CV. The output of the assays is the average shift per cluster of 4 rings, and the assays averaged 0.5% CV between clusters. The variability between chips averaged 1.8%. Running the same array on multiple instruments showed that after some improvements to the wavelength referencing system, the upper boundary of variation was 3% between 13 different instruments. The immunoassay displayed about 2% higher variability than the salt assays. There are several outstanding features of this system. The

Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO{sub x}/insulator structures from the results of synchrotron investigations

Energy Technology Data Exchange (ETDEWEB)

Turishchev, S. Yu., E-mail: tsu@phys.vsu.ru; Terekhov, V. A.; Koyuda, D. A. [Voronezh State University (Russian Federation); Ershov, A. V.; Mashin, A. I. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Parinova, E. V.; Nesterov, D. N. [Voronezh State University (Russian Federation); Grachev, D. A.; Karabanova, I. A. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Domashevskaya, E. P. [Voronezh State University (Russian Federation)

2017-03-15

The problem of the efficiency of the controllable formation of arrays of silicon nanoparticles is studied on the basis of detailed investigations of the electronic structure of multilayer nanoperiodic a-SiO{sub x}/SiO{sub 2}, a-SiO{sub x}/Al{sub 2}O{sub 3}, and a-SiO{sub x}/ZrO{sub 2} compounds. Using synchrotron radiation and the X-ray absorption near edge structure (XANES) spectroscopy technique, a modification is revealed for the investigated structures under the effect of high-temperature annealing at the highest temperature of 1100°C; this modification is attributed to the formation of silicon nanocrystals in the layers of photoluminescent multilayer structures.

High precision measurements of 16O12C17O using a new type of cavity ring down spectrometer

Science.gov (United States)

Daëron, M.; Stoltmann, T.; Kassi, S.; Burkhart, J.; Kerstel, E.

2016-12-01

Laser absorption techniques for the measurement of isotopologue abundances in gases have been dripping into the geoscientific community over the past decade. In the field of carbon dioxide such instruments have mostly been restricted to measurements of the most abundant stable isotopologues. Distinct advantages of CRDS techniques are non-destructiveness and the ability to resolve isobaric isotopologues. The determination of low-abundance isotopologues is predominantly limited by the linewidth of the probing laser, laser jitter, laser drift and system stability. Here we present first measurements of 16O12C17O abundances using a new type of ultra-precise cavity ring down spectrometer. By the use of Optical Feedback Frequency Stabilization, we achieved a laser line width in the sub-kHz regime with a frequency drift of less than 20 Hz/s. A tight coupling with an ultra-stable ring down cavity combined with a frequency tuning mechanism which enables us to arbitrarily position spectral points (Burkart et al., 2013) allowed us to demonstrate a single-scan (2 minutes) precision of 40 ppm on the determination of the 16O12C17O abundance. These promising results imply that routine, direct, high-precision measurements of 17O-anomalies in CO2 using this non-destructive method are in reach. References:Burkart J, Romanini D, Kassi S; Optical feedback stabilized laser tuned by single-sideband modulation; Optical Letters 12:2062-2063 (2013)

Simulation of atomistic processes during silicon oxidation

OpenAIRE

Bongiorno, Angelo

2003-01-01

Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 interface is of significant importance in state-of-the-art silicon microelectronics manufacturing. These two topics are intimately coupled and are both addressed in this theoretical investigation mainly through first-principles calculations....

Doubly versus singly positively charged oxygen ions back-scattered from a silicon surface under dynamic O2+ bombardment

International Nuclear Information System (INIS)

Franzreb, Klaus; Williams, Peter; Loerincik, Jan; Sroubek, Zdenek

2003-01-01

Mass-resolved (and emission-charge-state-resolved) low-energy ion back-scattering during dynamic O 2 + bombardment of a silicon surface was applied in a Cameca IMS-3f secondary ion mass spectrometry (SIMS) instrument to determine the bombarding energy dependence of the ratio of back-scattered O 2+ versus O + . While the ratio of O 2+ versus O + drops significantly at reduced bombarding energies, O 2+ back-scattered from silicon was still detectable at an impact energy (in the lab frame) as low as about 1.6 keV per oxygen atom. Assuming neutralization prior to impact, O 2+ ion formation in an asymmetric 16 O→ 28 Si collision is expected to take place via 'collisional double ionization' (i.e. by promotion of two outer O 2p electrons) rather than by the production of an inner-shell (O 2s or O 1s) core hole followed by Auger-type de-excitation during or after ejection. A molecular orbital (MO) correlation diagram calculated for a binary 'head-on' O-Si collision supports this interpretation

Use of an Implant O-Ring Attachment for the Tooth Supported Mandibular Overdenture: A Clinical Report

Science.gov (United States)

Guttal, Satyabodh S.; Tavargeri, Anand K.; Nadiger, Ramesh K.; Thakur, Srinath L.

2011-01-01

Retention of a mandibular denture can be achieved by an implant-retained or natural tooth-retained bar and stud attachment in the anterior segment of the mandible. The same design principles holds true for both implant-retained and tooth-retained methods of anchoring the bar and stud attachment. A simple and cost effective treatment for more complex implant overdenture is the concept of conventional tooth-retained overdentures. When few firm teeth still remain in a compromised dentition, preservation of these teeth for overdentures can improve retention and stability. The authors present a clinical report of a patient treated with a mandibular tooth-borne overdenture with bar and O-ring attachment. A splinted bar supported the prosthesis and an O-ring retained the denture. PMID:21769276

Use of an implant o-ring attachment for the tooth supported mandibular overdenture: a clinical report.

Science.gov (United States)

Guttal, Satyabodh S; Tavargeri, Anand K; Nadiger, Ramesh K; Thakur, Srinath L

2011-07-01

Retention of a mandibular denture can be achieved by an implant-retained or natural tooth-retained bar and stud attachment in the anterior segment of the mandible. The same design principles holds true for both implant-retained and tooth-retained methods of anchoring the bar and stud attachment. A simple and cost effective treatment for more complex implant overdenture is the concept of conventional tooth-retained overdentures. When few firm teeth still remain in a compromised dentition, preservation of these teeth for overdentures can improve retention and stability. The authors present a clinical report of a patient treated with a mandibular tooth-borne overdenture with bar and O-ring attachment. A splinted bar supported the prosthesis and an O-ring retained the denture.

Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

Science.gov (United States)

Shahrjerdi, Davood; Bedell, Stephen W

2013-01-09

In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

The O+ contribution and role on the ring current pressure development for CMEs and CIRs using Van Allen Probes observations

Science.gov (United States)

Mouikis, C.; Bingham, S.; Kistler, L. M.; Farrugia, C. J.; Spence, H. E.; Gkioulidou, M.

2016-12-01

The ring current responds differently to the different solar and interplanetary storm drivers such as coronal mass injections, (CME's), co-rotating interaction regions (CIR's), high-speed streamers and other structures. The resulting changes in the ring current particle pressure change the global magnetic field, which affects the transport of the radiation belts. In order to determine the field changes during a storm, it is necessary to understand the transport, sources and losses of the particles that contribute to the ring current. The source population of the storm time ring current is the night side plasma sheet. We use Van Allen Probes observations to determine the ring current pressure contribution of the convecting plasma sheet H+ and O+ particles in the storm time development of the ring current. We compare storms that are related to different interplanetary drivers, CMEs and CIRs, as observed at different local times. We find that during the storm main phase most of the ring current pressure in the pre-midnight inner magnetosphere is contributed by particles on open drift paths that cause the development of a strong partial ring current that causes most of the main phase Dst drop. These particles can reach as deep as L 2 and their pressure compares to the local magnetic field pressure as deep as L 3. During the recovery phase, if these particles are not lost at the magnetopause, will become trapped and will contribute to the symmetric ring current. However, the largest difference between the CME and CIR ring current responses during the storm main and early recovery phases is caused by how the 15 - 60 keV O+ responds to these drivers.

Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations

International Nuclear Information System (INIS)

Jiang Shuai; Jia Rui; Tao Ke; Hou Caixia; Sun Hengchao; Li Yongtao; Yu Zhiyong

2017-01-01

Interdigitated back contact (IBC) solar cells can achieve a very high efficiency due to its less optical losses. But IBC solar cells demand for high quality passivation of the front surface. In this paper, a polycrystalline silicon/SiO 2 stack structure as front surface field to passivate the front surface of IBC solar cells is proposed. The passivation quality of this structure is investigated by two dimensional simulations. Polycrystalline silicon layer and SiO 2 layer are optimized to get the best passivation quality of the IBC solar cell. Simulation results indicate that the doping level of polycrystalline silicon should be high enough to allow a very thin polycrystalline silicon layer to ensure an effective passivation and small optical losses at the same time. The thickness of SiO 2 should be neither too thin nor too thick, and the optimal thickness is 1.2 nm. Furthermore, the lateral transport properties of electrons are investigated, and the simulation results indicate that a high doping level and conductivity of polycrystalline silicon can improve the lateral transportation of electrons and then the cell performance. (paper)

Liberation of methyl acrylate from metallalactone complexes via M-O ring opening (M = Ni, Pd) with methylation agents

KAUST Repository

Lee, S. Y Tina; Ghani, Amylia Abdul; D'Elia, Valerio; Cokoja, Mirza; Herrmann, Wolfgang A.; Basset, Jean-Marie; Kü hn, Fritz

2013-01-01

Ring opening of various nickela- and palladalactones induced by the cleavage of the M-O bond by methyl trifluoromethanesulfonate (MeOTf) and methyl iodide (MeI) is examined. Experimental evidence supports the mechanism of ring opening by the alkylating agent followed by β-H elimination leading to methyl acrylate and a metal-hydride species. MeOTf shows by far higher efficiency in the lactone ring opening than any other methylating agent including the previously reported methyl iodide. © 2013 The Royal Society of Chemistry and the Centre National de la Recherche Scientifique.

Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix

International Nuclear Information System (INIS)

Hao, X.J.; Cho, E.-C.; Scardera, G.; Bellet-Amalric, E.; Bellet, D.; Shen, Y.S.; Huang, S.; Huang, Y.D.; Conibeer, G.; Green, M.A.

2009-01-01

Promise of Si nanocrystals highly depends on tailoring their behaviour through doping. Phosphorus-doped silicon nanocrystals embedded in a silicon dioxide matrix have been realized by a co-sputtering process. The effects of phosphorus-doping on the properties of Si nanocrystals are investigated. Phosphorus diffuses from P-P and/or P-Si to P-O upon high temperature annealing. The dominant X-ray photoelectron spectroscopy P 2p signal attributable to Si-P and/or P-P (130 eV) at 1100 o C indicates that the phosphorus may exist inside Si nanocrystals. It is found that existence of phosphorus enhances phase separation of silicon rich oxide and thereby Si crystallization. In addition, phosphorus has a considerable effect on the optical absorption and photoluminescence properties as a function of annealing temperature.

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells.

Science.gov (United States)

Lin, Wenjie; Wu, Weiliang; Liu, Zongtao; Qiu, Kaifu; Cai, Lun; Yao, Zhirong; Ai, Bin; Liang, Zongcun; Shen, Hui

2018-04-25

A high recombination rate and high thermal budget for aluminum (Al) back surface field are found in the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the holes on the silicon surface because of Fermi-level pinning effect. As a result, low-temperature-deposited, dopant-free chromium trioxide (CrO x , x solar cell as a hole-selective contact at the rear surface. By using 4 nm CrO x between the p-type silicon and Ag, we achieve a reduction of the contact resistivity for the contact of Ag directly on p-type silicon. For further improvement, we utilize a CrO x (2 nm)/Ag (30 nm)/CrO x (2 nm) multilayer film on the contact between Ag and p-type crystalline silicon (c-Si) to achieve a lower contact resistance (40 mΩ·cm 2 ). The low-resistivity Ohmic contact is attributed to the high work function of the uniform CrO x film and the depinning of the Fermi level of the SiO x layer at the silicon interface. Implementing the advanced hole-selective contacts with CrO x /Ag/CrO x on the p-type silicon solar cell results in a power conversion efficiency of 20.3%, which is 0.1% higher than that of the cell utilizing 4 nm CrO x . Compared with the commercialized p-type solar cell, the novel CrO x -based hole-selective transport material opens up a new possibility for c-Si solar cells using high-efficiency, low-temperature, and dopant-free deposition techniques.

ZnO buffer layer for metal films on silicon substrates

Science.gov (United States)

Ihlefeld, Jon

2014-09-16

Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

Ligand-Mediated Ring → Cube Transformation in a Catalytic Subnanocluster: Co4O4(MeCN)n with n = 1-6.

Science.gov (United States)

Luo, Sijie; Dibble, Collin J; Duncan, Michael A; Truhlar, Donald G

2014-08-07

We studied the Co4O4 subnanocluster and its MeCN-coated species using density functional theory, and we found that the Co4O4 core presents distinctive structures in bare and ligand-coated species. We propose a possible ligand-mediated ring → cube transformation mechanism during the ligand-coating process of the Co4O4 core due to the stronger binding energies of the MeCN ligands to the 3D distorted cube structure than to the 2D ring and ladder structures; theory indicates that three ligands are sufficient to stabilize the cube structure. Both ring and cube structures are ferromagnetic. Our finding is potentially useful for understanding the catalysis mechanism of Co4O4 species, which have important applications in solar energy conversion and water splitting; these catalysis reactions usually involve frequent addition and subtraction of various ligands and thus possibly involve core rearrangement processes similar to our findings.

FTIR studies of swift silicon and oxygen ion irradiated porous silicon

International Nuclear Information System (INIS)

Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

1999-01-01

Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

Element depth profiles of porous silicon

International Nuclear Information System (INIS)

Kobzev, A.P.; Nikonov, O.A.; Kulik, M.; Zuk, J.; Krzyzanowska, H.; Ochalski, T.J.

1997-01-01

Element depth profiles of porous silicon were measured on the Van-de-Graaff accelerator in the energy range of 4 He + ions from 2 to 3.2 MeV. Application of complementary RBS, ERD and 16 O(α,α) 16 O nuclear reaction methods permits us to obtain: 1) the exact silicon, oxygen and hydrogen distribution in the samples, 2) the distribution of partial pore concentrations. The oxygen concentration in porous silicon reaches 30%, which allows one to assume the presence of silicon oxide in the pores and to explain the spectrum shift of luminescence into the blue area

Hybrid plasmonic waveguide-assisted Metal–Insulator–Metal ring resonator for refractive index sensing

Science.gov (United States)

Butt, M. A.; Khonina, S. N.; Kazanskiy, N. L.

2018-05-01

A highly sensitive refractive index sensor based on an integrated hybrid plasmonic waveguide (HPWG) and a Metal-Insulator-Metal (M-I-M) micro-ring resonator is presented. In our design, there are two slot-waveguide-based micro-rings that encircle a gold disc. The outer slot WG is formed by the combination of Silicon-Air-Gold ring and the inner slot-waveguide is formed by Gold ring-Air-Gold disc. The slot-waveguide rings provide an interaction length sufficient to accumulate a detectable wavelength shift. The transmission spectrum and electric field distribution of this sensor structure are simulated using Finite Element Method (FEM). The sensitivity of this micro-ring resonator is achieved at 800 nm/RIU which is about six times higher than that of the conventional Si ring with the same geometry. Our proposed sensor design has a potential to find further applications in biomedical science and nano-photonic circuits.

The performance of Y2O3 as interface layer between La2O3 and p-type silicon substrate

Directory of Open Access Journals (Sweden)

Shulong Wang

2016-11-01

Full Text Available In this study, the performance of Y2O3 as interface layer between La2O3 and p-type silicon substrate is studied with the help of atomic layer deposition (ALD and magnetron sputtering technology. The surface morphology of the bilayer films with different structures are observed after rapid thermal annealing (RTA by atomic force microscopy (AFM. The results show that Y2O3/Al2O3/Si structure has a larger number of small spikes on the surface and its surface roughness is worse than Al2O3/Y2O3/Si structure. The reason is that the density of Si substrate surface is much higher than that of ALD growth Al2O3. With the help of high-frequency capacitance-voltage(C-V measurement and conductivity method, the density of interface traps can be calculated. After a high temperature annealing, the metal silicate will generate at the substrate interface and result in silicon dangling bond and interface trap charge, which has been improved by X-ray photoelectron spectroscopy (XPS and interface trap charge density calculation. The interface trapped charge density of La2O3/Al2O3/Si stacked gate structure is lower than that of La2O3/Y2O3/Si gate structure. If Y2O3 is used to replace Al2O3 as the interfacial layer, the accumulation capacitance will increase obviously, which means lower equivalent oxide thickness (EOT. Our results show that interface layer Y2O3 grown by magnetron sputtering can effectively ensure the interface traps near the substrate at relative small level while maintain a relative higher dielectric constant than Al2O3.

Fabrication And Characterization of YBa2Cu3O7-x Ring For The Laboratory Scale Fault Current Limiter

International Nuclear Information System (INIS)

Adi, Wisnu Ari; Sukirman, Engkir; Winatapura, Didin S.; Handayani, Ari

2004-01-01

Two rings of YBa 2 Cu 3 O 7-x superconductor have been made by using the pressing method, that has been modified. The inner diameter, outer diameter, and thickness of ring 1 are 23.46 mm, 40.66 mm, and 6.84 mm, while for ring 2 are 23.65 mm, 40.73 mm, and 8.28 mm, respectively. The XRD data show that both samples have the same 123-phase. The critical temperature, Tc of both samples is 91 K. The estimate values of induction magnetic field at the center of ring 1 and ring 2 are 1.27 x 10 -4 T (I c = 3.48 A) and 1.65 x 10 -4 T (I c = 3.52 A), respectively

Effect of opacifiers and UV absorbers on pigmented maxillofacial silicone elastomer, part 2: mechanical properties after artificial aging.

Science.gov (United States)

Nguyen, Caroline Tram; Chambers, Mark S; Powers, John M; Kiat-Amnuay, Sudarat

2013-06-01

There are reports of dissatisfaction with color instability and reduced lifetime of extraoral maxillofacial prostheses. Previous studies showed that UV mineral-based light-protecting agent (LP) improved color stability of MDX4-4210/Type A silicone elastomer. However, effects of this agent and opacifiers on mechanical properties of the elastomer are unknown. The purpose of this study was to evaluate the effect of 2 commonly used opacifiers and LP, a new opacifier, when combined with pigments on the mechanical properties of MDX4-4210/Type A silicone elastomer before and after artificial aging. Two commonly used opacifiers, titanium white dry pigment (TW) and silicone intrinsic white (SW) and LP were each combined with MDX4-4210/type A. Artists' oil pigment was then combined with the LP and TW groups, and silicone intrinsic pigments were combined with the SW group with 5 colors (no pigment=control, red, yellow, blue, or a combination of the 3 pigments). Ten dumbbell-shaped and 10 trouser-shaped specimens of each opacifier + pigment mixture, plus a control group with no opacifier and no pigment, were made for a total of 320 specimens. Half of the specimens (n=5) were aged in a chamber at 450 kJ/m(2). Specimens were tested for hardness (ASTM D2240), tensile strength (ASTM D412), tear strength (ASTM D624), and percentage elongation in a universal testing machine. A 3-way ANOVA and the Fisher PLSD test were performed (α=.05) for each mechanical property. After accelerated aging, values of Shore A hardness were the lowest for LP with all 5 pigments and the control, followed by SW and TW (Paging, tear strength, tensile strength, and elongation decreased significantly (Partificial aging. SW and TW preserved the mechanical properties of silicone in this study. Copyright © 2013 The Editorial Council of the Journal of Prosthetic Dentistry. Published by Mosby, Inc. All rights reserved.

Late Eocene rings around the earth

Science.gov (United States)

King, E. A.

1980-01-01

The suggestion of O'Keefe (1980) that the terminal Eocene event was caused by rings of tektite material encircling the earth is discussed. It is argued that the assumption that the tektites are of lunar volcanic origin is unwarranted and contrary to existing data, including the lack of lunar rocks of suitable composition, the lack of lunar rocks of the correct age, the lack of evidence that the North American tektites fell throughout a sedimentary rock column of a few million years, and the nondetection of a tektite with a measurable cosmic ray exposure age. Alternatively, it is suggested that the terminal Eocene event may be associated with volcanic ash, air-fall tuff and bentonite in the late Eocene. O'Keefe replies that the hypothesis of the terrestrial origin of the tektites conflicts with the laws of physics, for example in the glass structure and shaping of the tektites. Furthermore, evidence is cited for lunar rocks of the proper major-element composition and ages, and it is noted that the proposed solar Poynting-Robertson effect would account for the particle fall distributions and cosmic ray ages.

Selective CVD tungsten on silicon implanted SiO/sub 2/

International Nuclear Information System (INIS)

Hennessy, W.A.; Ghezzo, M.; Wilson, R.H.; Bakhru, H.

1988-01-01

The application range of selective CVD tungsten is extended by its coupling to the ion implantation of insulating materials. This article documents the results of selective CVD tungsten using silicon implanted into SiO/sub 2/ to nucleate the tungsten growth. The role of implant does, energy, and surface preparation in achieving nucleation are described. SEM micrographs are presented to demonstrate the selectivity of this process. Measurements of the tungsten film thickness and sheet resistance are provided for each of the experimental variants corresponding to successful deposition. RBS and XPS analysis are discussed in terms of characterizing the tungsten/oxide interface and to evaluate the role of the silicon implant in the CVD tungsten mechanism. Utilizing this method a desired metallization pattern can be readily defined with lithography and ion implantation, and accurately replicated with a layer of CVD tungsten. This approach avoids problems usually associated with blanket deposition and pattern transfer, which are particularly troublesome for submicron VLSI technology

The kinetics and properties of thermal oxidation of silicon in TCA-O/sub 2/

International Nuclear Information System (INIS)

Ahmed, W.; Ahmed, E.

1993-01-01

The oxidation of silicon using dry O/sub 2/ is now well established as a key process for the fabrication of electronic devices in the semiconductor industry. However, this process is complicated by its sensitivity to impurities which reduce device yields. HCl can be added to O/sub 2/ to remove these impurities but due to its highly corrosive nature a safer and cleaner alternative such as trichloroethane (TCA) is desirable. In this paper, the thermal oxidation of silicon using a mixture of TCA-O/sub 2/ has been investigated in a large scale industrial system. The growth kinetics and the properties of these films have been studies and compared to oxides produced from dry 2. The addition of TCA generates HCl in situ, enhances the oxidation rate by approximately 54% nd improves the electrical properties. It was found that a 1 mol.% mixture gives the optimum process. An analysis of the data suggests that a liner parabolic growth model is applicable and provides a valuable insight into the physical phenomena governing this important process. (author)

Reversible photoluminescence in spiropyran-modified porous silicon

International Nuclear Information System (INIS)

Lee, Chen-Yu; Hu, Chih-Hsuan; Cheng, Sheng-Lin; Chu, Chih-Chien; Hsiao, Vincent K.S.

2015-01-01

Spiropyran-modified porous silicon (spiro-PS) was used for the first time as an organic–inorganic hybrid material by using reversible photoluminescence (PL). Before spiropyran modification, the peak wavelength from PS was approximately 600 nm. Subsequent spiropyran modification strongly quenched the PL intensity, from 15,000 to 2000 counts. However, under UV light irradiation, the PL intensity from spiro-PS was increased gradually to 20,000 counts because of the photoinduced ring opening from a colorless spiropyran (SP-form) to a colored merocyanine (MC-form). Furthermore, the resulting peak wavelength of the PL of an MC–PS sample red-shifted from 600 to 650 nm, and the PL intensity was higher than that of unmodified PS. Because the fluorescence emission band (500–700 nm) of PS substantially overlapped the absorption band (500–700 nm) of the MC-form of spiropyran, the energy transfer from the PS (donor) to the open-ring-state MC-form (acceptor) occurs efficiently. The intensity of the PL from spiro-PS can be reversibly modulated using a heat stimulus. The current demonstrations have potential in reversible solid-state lighting or data storage applications. - Highlights: • Spiropyran-modified porous silicon (spiro-PS) was used for the first time as an organic–inorganic hybrid material with reversible photoluminescence (PL). • UV light irradiation make PL intensity from spiro-PS increased due to the photo-induced ring opening process. • The energy transfer from the PS (donor) to the open-ring state of spiropyran (acceptor) was to be efficient due to the fluorescence emission band of PS substantially overlapped with the absorption band of the ring-opened spiro. • The intensity of the PL from spiro-PS can be reversibly modulated using a heat stimulus

Selective Synthesis of Manganese/Silicon Complexes in Supercritical Water

Directory of Open Access Journals (Sweden)

Jiancheng Wang

2014-01-01

Full Text Available A series of manganese salts (Mn(NO32, MnCl2, MnSO4, and Mn(Ac2 and silicon materials (silica sand, silica sol, and tetraethyl orthosilicate were used to synthesize Mn/Si complexes in supercritical water using a tube reactor. X-ray diffraction (XRD, X-ray photoelectron spectrometer (XPS, transmission electron microscopy (TEM, and scanning electron microscopy (SEM were employed to characterize the structure and morphology of the solid products. It was found that MnO2, Mn2O3, and Mn2SiO4 could be obtained in supercritical water at 673 K in 5 minutes. The roles of both anions of manganese salts and silicon species in the formation of manganese silicon complexes were discussed. The inorganic manganese salt with the oxyacid radical could be easily decomposed to produce MnO2/SiO2 and Mn2O3/SiO2. It is interesting to found that Mn(Ac2 can react with various types of silicon to produce Mn2SiO4. The hydroxyl groups of the SiO2 surface from different silicon sources enhance the reactivity of SiO2.

Transmission Property of Directly Modulated Signals Enhanced by a Micro-ring Resonator

DEFF Research Database (Denmark)

An, Yi; Lorences Riesgo, Abel; Seoane, Jorge

2012-01-01

A silicon micro-ring resonator is used to enhance the modulation speed of a 10-Gbit/s directly modulated laser to 40 Gbit/s. The generated signal is transmitted error free over 4.5 km SSMF. Dispersion tolerance is also studied....

Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

Science.gov (United States)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed

2014-07-29

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

2014-01-01

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon-incorporated diamond-like coatings for Si3N4 mechanical seals

International Nuclear Information System (INIS)

Camargo, S.S.; Gomes, J.R.; Carrapichano, J.M.; Silva, R.F.; Achete, C.A.

2005-01-01

Amorphous silicon carbide (a-SiC) and silicon-incorporated diamond-like carbon films (DLC-Si) were evaluated as protective and friction reduction coatings onto Si 3 N 4 rings. Unlubricated tribological tests were performed with a pin-on-disk apparatus against stainless steel pins with loads ranging from 3 to 55 N and sliding velocities from 0.2 to 1.0 m/s under ambient air and 50-60% relative humidity. At the lowest loads, a-SiC coatings present a considerable improvement with respect to the behavior of uncoated disks since the friction coefficient is reduced to about 0.2 and the system is able to run stably for thousands of meters. At higher loads, however, a-SiC coatings fail. DLC-Si-coated rings, on the other hand, presented for loads up to 10 N a steady-state friction coefficient below 0.1 and very low wear rates. The lowest steady-state mean friction coefficient value of only 0.055 was obtained with a sliding velocity of 0.5 m/s. For higher loads in the range of 20 N, the friction coefficient drops to values around 0.1 but no steady state is reached. For the highest loads of over 50 N, a catastrophic behavior is observed. Typically, wear rates below 5x10 -6 and 2x10 -7 mm 3 /N m were obtained for the ceramic rings and pins, respectively, with a load of 10 N and a sliding velocity of 0.5 m/s. Analysis of the steel pin contact surface by scanning electron microscopy (SEM)-energy dispersive X-ray spectrometry (EDS) and Auger spectroscopy revealed the formation of an adherent tribo-layer mainly composed by Si, C and O. The unique structure of DLC-Si films is thought to be responsible for the formation of the tribo-layer

Fabrication of gold dot, ring, and corpuscle arrays from block copolymer templates via a simple modification of surface energy

Science.gov (United States)

Cho, Heesook; Choi, Sinho; Kim, Jin Young; Park, Soojin

2011-12-01

We demonstrate a simple method for tuning the morphologies of as-spun micellar thin films by modifying the surface energy of silicon substrates. When a polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) copolymer dissolved in o-xylene was spin-coated onto a PS-modified surface, a dimple-type structure consisting of a thick PS shell and P2VP core was obtained. Subsequently, when the films were immersed in metal precursor solutions at certain periods of time and followed by plasma treatment, metal individual dots in a ring-shaped structure, metal nanoring, and metal corpuscle arrays were fabricated, depending on the loading amount of metal precursors. In contrast, when PS-b-P2VP films cast onto silicon substrates with a native oxide were used as templates, only metal dotted arrays were obtained. The combination of micellar thin film and surface energy modification offers an effective way to fabricate various nanostructured metal or metal oxide films.We demonstrate a simple method for tuning the morphologies of as-spun micellar thin films by modifying the surface energy of silicon substrates. When a polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) copolymer dissolved in o-xylene was spin-coated onto a PS-modified surface, a dimple-type structure consisting of a thick PS shell and P2VP core was obtained. Subsequently, when the films were immersed in metal precursor solutions at certain periods of time and followed by plasma treatment, metal individual dots in a ring-shaped structure, metal nanoring, and metal corpuscle arrays were fabricated, depending on the loading amount of metal precursors. In contrast, when PS-b-P2VP films cast onto silicon substrates with a native oxide were used as templates, only metal dotted arrays were obtained. The combination of micellar thin film and surface energy modification offers an effective way to fabricate various nanostructured metal or metal oxide films. Electronic supplementary information (ESI) available: AFM images of Au

Buffer layers for growth of the YBa sub 2 Cu sub 3 O sub 7 sub - sub x films on silicon

CERN Document Server

Razumov, S V

2001-01-01

The results of the studies on the structural characteristics of the SrTiO sub 3 , NdGaO sub 3 and CeO sub 2 buffer layers, obtained through the ion-plasma spraying on the silicon substrates, are presented. It is shown that the phase composition and internal stresses in the films are strongly dependent on the deposition temperature. The technological conditions of growth of primarily oriented SrTiO sub 3 , NdGaO sub 3 and CeO sub 2 films are dortmund. The structural quality of the obtained buffer films is sufficient for further growth of the YBa sub 2 Cu sub 3 O sub 7 sub - sub x high-quality films on the silicon substrates

Discovery of energetic molecular ions (NO+ and O2+) in the storm time ring current

International Nuclear Information System (INIS)

Klecker, B.; Moebius, E.; Hovestadt, D.; Scholer, M.; Gloeckler, G.; Ipavich, F.M.

1986-01-01

A few hours after the onset of a large geomagnetic storm on September 4, 1984, energetic molecular ions in the mass range 28--32, predminantly NO + and O 2 + , have been discovered in the outer ring current at L--7. The data have been obtained with the time-of-flight spectrometer SULEICA on the AMPTE/IRM spacecraft. We find at 160 keV/e a mean abundance ratio of the molecular ions relative to O + ions of 0.031 +- 0.004. During quiet times no molecular ions are observed, the 1 sigma upper limit of the ratio derived by averaging over several quiet periods is 0.003. The observations demonstrate the injection of ionospheric plasma into the storm time ring current and the subsequent acceleration to energies of several hundred keV on a time scale of a few hours after the onset of the magnetic storm

Electrochemical performance and structure evolution of core-shell nano-ring α-Fe{sub 2}O{sub 3}@Carbon anodes for lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Sun, Yan-Hui, E-mail: sunyanhui0102@163.com; Liu, Shan; Zhou, Feng-Chen; Nan, Jun-Min

2016-12-30

Core-shell nano-ring α-Fe{sub 2}O{sub 3}@Carbon (CSNR) composites with different carbon content (CSNR-5%C and CSNR-13%C) are synthesized using a hydrothermal method by controlling different amounts of glucose and α-Fe{sub 2}O{sub 3} nano-rings with further annealing. The CSNR electrodes exhibit much improved specific capacity, cycling stability and rate capability compared with that of bare nano-ring α-Fe{sub 2}O{sub 3} (BNR), which is attributed to the core-shell nano-ring structure of CSNR. The carbon shell in the inner and outer surface of CSNR composite can increase electron conductivity of the electrode and inhibit the volume change of α-Fe{sub 2}O{sub 3} during discharge/charge processes, and the nano-ring structure of CSNR can buffer the volume change too. The CSNR-5%C electrode shows super high initial discharge/charge capacities of 1570/1220 mAh g{sup −1} and retains 920/897 mAh g{sup −1} after 200 cycles at 500 mA g{sup −1} (0.5C). Even at 2000 mA g{sup −1} (2C), the electrode delivers the initial capacities of 1400/900 mAh g{sup −1}, and still maintains 630/610 mAh g{sup −1} after 200 cycles. The core-shell nano-rings opened during cycling and rebuilt a new flower-like structure consisting of α-Fe{sub 2}O{sub 3}@Carbon nano-sheets. The space among the nano-sheet networks can further buffer the volume expansion of α-Fe{sub 2}O{sub 3} and facilitate the transportation of electrons and Li{sup +} ions during the charge/discharge processes, which increases the capacity and rate capability of the electrode. It is the first time that the evolution of core-shell α-Fe{sub 2}O{sub 3}@Carbon changing to flower-like networks during lithiation/de-lithiation has been reported.

Silicon photonic micro-ring resonators to sense strain and ultrasound

NARCIS (Netherlands)

Westerveld, W.J.

2014-01-01

We demonstrated that photonic micro-ring resonators can be used in micro-machined ultrasound microphones. This might cause a breakthrough in array transducers for ultrasonography; first because optical multiplexing allows array interrogation via one optical fiber and second because the

Measurement of synchrotron radiation from the NBS SURF II using a silicon radiometer

International Nuclear Information System (INIS)

Schaefer, A.R.

1980-01-01

A project is described in which the synchrotron radiation output from the NBS storage ring known as SURF II, is measured using a well characterized silicon based radiometer. This device consists of a silicon photodiode coupled with two interference filters to restrict the spectral response to a finite and convenient spectral region for the measurement. Considerations required for the characterization of the radiometer will be discussed. The absolute radiant flux from the storage ring is also calculable from various machine parameters. A measurement of the number of circulating electrons will be derived from electron counting techniques at low levels. This will yield an important intercomparison between the synchrotron flux measurements determined in two entirely different ways. (orig.)

Facile solvothermal synthesis of abnormal growth of one-dimensional ZnO nanostructures by ring-opening reaction of polyvinylpyrrolidone

Energy Technology Data Exchange (ETDEWEB)

Xu, G., E-mail: gxu@alum.imr.ac.cn; Wang, X.L.; Liu, G.Z.

2015-02-28

Graphical abstract: - Highlights: • Facile solvothermal synthesis of ZnO nanostructures in super high alkaline alcoholic condition. • The exact role and chemical transformations of PVP in solvothermal synthesis of ZnO nanostructures was revealed. • Mechanism of abnormal growth of ZnO nanopyramids was proposed based on ring-opening reaction of PVP. - Abstract: Abnormal growth of one-dimensional (1-D) ZnO nanostructures (NSs) have been accomplished with the assistance of polyvinylpyrrolidone (PVP) under a super high alkaline alcoholic solvothermal condition. The products were characterized by transmission electron microscopy (TEM), thermogravimetric analysis (TGA), X-ray diffraction (XRD), Fourier transform infrared (FT-IR) and proton nuclear magnetic resonance ({sup 1}H NMR) spectroscopy. The effect of synthetic conditions, such as reaction temperature and the addition of PVP, on the morphologies of ZnO products were investigated. The results show that PVP molecules had the significant role in the transformation of morphologies of ZnO NSs ranging from nanorods, nanoparticles to pyramids, as well as flower-like assembly features. The possible growth mechanism of ZnO pyramids was proposed based on ring-opening reaction of PVP.

High-precision X-ray spectroscopy of highly-charged ions at the experimental storage ring using silicon microcalorimeters

Science.gov (United States)

Scholz, Pascal A.; Andrianov, Victor; Echler, Artur; Egelhof, Peter; Kilbourne, Caroline; Kiselev, Oleg; Kraft-Bermuth, Saskia; McCammon, Dan

2017-10-01

X-ray spectroscopy on highly charged heavy ions provides a sensitive test of quantum electrodynamics in very strong Coulomb fields. One limitation of the current accuracy of such experiments is the energy resolution of available X-ray detectors for energies up to 100 keV. To improve this accuracy, a novel detector concept, namely the concept of microcalorimeters, is exploited for this kind of measurements. The microcalorimeters used in the present experiments consist of silicon thermometers, ensuring a high dynamic range, and of absorbers made of high-Z material to provide high X-ray absorption efficiency. Recently, besides an earlier used detector, a new compact detector design, housed in a new dry cryostat equipped with a pulse tube cooler, was applied at a test beamtime at the experimental storage ring (ESR) of the GSI facility in Darmstadt. A U89+ beam at 75 MeV/u and a 124Xe54+ beam at various beam energies, both interacting with an internal gas-jet target, were used in different cycles. This test was an important benchmark for designing a larger array with an improved lateral sensitivity and statistical accuracy.

Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

Directory of Open Access Journals (Sweden)

Roca i Cabarrocas P.

2012-07-01

Full Text Available We report on silicon heterojunction solar cells using textured aluminum doped zinc oxide (ZnO:Al as a transparent conductive oxide (TCO instead of flat indium tin oxide. Double side silicon heterojunction solar cell were fabricated by radio frequency plasma enhanced chemical vapor deposition on high life time N-type float zone crystalline silicon wafers. On both sides of these cells we have deposited by radio frequency magnetron sputtering ZnO:Al layers of thickness ranging from 800 nm to 1400 nm. These TCO layers were then textured by dipping the samples in a 0.5% hydrochloric acid. External quantum efficiency as well as I-V under 1 sun illumination measurements showed an increase of the current for the cells using textured ZnO:Al. The cells were then annealed at 150 °C, 175 °C and 200 °C during 30 min in ambient atmosphere and characterized at each annealing step. The results show that annealing has no impact on the open circuit voltage of the devices but that up to a 175 °C it enhances their short circuit current, consistent with an overall enhancement of their spectral response. Our results suggest that ZnO:Al is a promising material to increase the short circuit current (Jsc while avoiding texturing the c-Si substrate.

Review article: silicon carbide. Structure, properties and processing Artigo revisão: carbeto de silício, estrtutura, propriedades e processamento

Directory of Open Access Journals (Sweden)

V. A. Izhevskyi

2000-03-01

Full Text Available In view of considerable interest in the development of liquid phase sintered structural and high-temperature ceramics on the base of silicon carbide, a comprehensive review of the data on structure, properties and the known methods of processing of silicon carbide seems timely. The most striking feature of silicon carbide is its polytypism, i.e. formation of a great number of different structural modifications without any change in composition. Although this feature of silicon carbide was extensively studied, no systematic up to date analysis was done. However, polytypism and the tendency of the polytypes to undergo structural transformations at working temperatures may lead to uncontrollable modification of the materials properties, and therefore needs to be fully understood. Furthermore, the recently developed liquid phase sintering technique for silicon carbide densification is of an undoubtful interest and the overview of the results achieved until present time may provide some guidelines for the ceramists.Em vista do considerável interesse no desenvolvimento de cerâmicas estruturais e para aplicações em alta temperatura, é oportuna uma revisão quanto a estrutura, propriedades e métodos conhecidos de processamento de cerâmicas a base de carbeto de silício sinterizados via fase líquida. A característica mais interessante do carbeto de silício é o seu politipismo, isto é, a formação de um grande número modificações estruturais para uma mesma composição. Embora este fenômeno venha sendo extensivamente estudado, não se tem até o momento, uma análise sistemática do mesmo, o que seria de extrema importância, uma vez que o politipismo e a tendência à transformação estrutural destes politipos em temperaturas típicas de trabalho podem levar a incontroláveis modificações nas propriedades do material. Além disso, os recentes avanços obtidos na densificação do carbeto de silício através da técnica de sinterização

A silicon-nanowire memory driven by optical gradient force induced bistability

Energy Technology Data Exchange (ETDEWEB)

Dong, B. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); Cai, H., E-mail: caih@ime.a-star.edu.sg; Gu, Y. D.; Kwong, D. L. [Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); Chin, L. K.; Ng, G. I.; Ser, W. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Huang, J. G. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore); School of Mechanical Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Yang, Z. C. [School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 (China); Liu, A. Q., E-mail: eaqliu@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 (China)

2015-12-28

In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

Selective formation of porous silicon

Science.gov (United States)

Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Extrusão do anel intra-estromal corneano e vascularização do túnel Extrusion and vascularization of the intrastromal corneal ring tunnel

Directory of Open Access Journals (Sweden)

Larissa Casteluber

2007-12-01

Full Text Available O objetivo deste trabalho é relatar e discutir os aspectos de um caso clínico em que foi observada a formação de neovascularização no túnel do anel intra-estromal corneano. Trata-se de paciente com ectasia corneana 4 anos após LASIK, comprovada pela paquimetria e topografia, e submetido ao implante de anel intra-estromal corneano. No terceiro ano de acompanhamento após implante do anel intraestromal, com o paciente em uso de lente de contato gelatinosa, verificou-se extrusão de um segmento e neovascularização no túnel. Removeu-se o segmento afetado, realizou-se fotocoagulação vascular, observando-se regressão completa do quadro neovascular.The purpose of this paper is to describe the clinical aspects of one case with deep corneal vascularization after corneal ring implantation to treat corneal ectasia due to LASIK 4 years before. The corneal ectasia diagnostic was performed by corneal pachimetry and topography. Intrastromal corneal ring segment was implanted. On the third year of follow-up, extrusion of one segment was noted and deep corneal neovascularization was found. The segment was removed, laser photocoagulation was applied and complete vascular regression was observed.

Hybrid matrices of TiO2 and TiO2–Ag nanofibers with silicone for high water flux photocatalytic degradation of dairy effluent

DEFF Research Database (Denmark)

Kanjwal, Muzafar Ahmad; Alm, Martin; Thomsen, Peter

2016-01-01

TiO2 and TiO2–Ag nanofibers were produced by electrospinning technique and surface coated on silicone elastomer (diameter: 10.0 mm; thickness: 2.0 mm) by dipcoating method. These coated hybrid nanoporous matrices were characterized by various morphological and physicochemical techniques (like SEM...

Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

2010-01-01

We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

Magnetic oxide heterostructures. EuO on cubic oxides and on silicon

International Nuclear Information System (INIS)

Caspers, Christian

2013-01-01

In the thesis at hand, we explore fundamental properties of ultrathin europium oxide (EuO) films. EuO is a model system of a localized 4f Heisenberg ferromagnet, in which the ferromagnetic coupling. provided a high crystalline quality. can be tuned by biaxial lattice strain. Moreover, the magnetic oxide EuO is perfectly suited as a spin-functional tunnel contact for silicon spintronics. However, up to now a challenging bulk and interface chemistry of EuO and Si has hampered a seamless integration into functional silicon heterostructures. In order to investigate fundamental aspects of the magnetic and electronic structure of ultrathin EuO, in the first part of this thesis, we synthesize EuO thin films on conductive YSZ substrates from bulklike thicknesses down to one nanometer by oxide molecular beam epitaxy (MBE). The EuO thin films are of textbook-like single-crystalline quality, and show bulk-like magnetic properties. We control the stoichiometry of buried EuO thin films by hard X-ray photoemission spectroscopy (HAXPES); even a 1 nm ultrathin EuO film exhibits no valence change or interface shifts. Furthermore, we conduct an advanced magnetic characterization by the magnetic circular dichroism (MCD) of Eu core-levels in photoemission, this gives us insight into the intra-atomic exchange coupling of EuO thin films. The MCD reveals large asymmetries of up to 49% in the well-resolved Eu 4d photoemission multiplet. Thus, ultrathin EuO coherently grown on conductive YSZ allows us to explore fundamental magnetic and electronic properties of a 4f magnetic oxide. Biaxial lateral strain applied to single-crystalline EuO is of fundamental interest, since it alters the electronic structure and magnetic coupling in a controlled way. We apply +4.2% tensile biaxial strain to EuO by epitaxial EuO/LaAlO 3 (100) heterostructures. EuO seamlessly adapts the lateral lattice parameter of LaAlO 3 , while the perpendicular parameter of EuO is the unchanged EuO bulk value, thus the

Evaluation method of gas leakage rate from transportation casks of radioactive materials (gas leakage rates from scratches on O-ring surface)

International Nuclear Information System (INIS)

Aritomi, Masanori; Li Ninghua; Asano, Ryoji; Kawa, Tsunemichi

2004-01-01

A sealing function is essential for transportation and/or storage casks of radioactive materials under both normal and accidental operating conditions in order to prevent radioactive materials from being released into the environment. In the safety analysis report, the release rate of radioactive materials into the environment is evaluated using the correlations specified in the ANSI N14.5, 1987. The purposes of the work are to reveal the underlying problems on the correlations specified in the ANSI N14.5 related to gas leakage rates from a scratch on O-ring surface and from multi-leak paths, to offer a data base to study the evaluation method of the leakage rate and to propose the evaluation method. In this paper, the following insights were obtained and clarified: 1. If a characteristic value of a leak path is defined as D 4 /a ('D' is the diameter and 'a' is the length), a scratch on the O-ring surface can be evaluated as a circular tube. 2. It is proper to use the width of O-ring groove on the flange as the leak path length for elastomer O-rings. 3. Gas leakage rates from multi leak paths of the transportation cask can be evaluated in the same manner as a single leak path if an effective D4/a is introduced. (author)

Effects of variation in background mixing ratios of N2, O2, and Ar on the measurement of δ18O-H2O and δ2H-H2O values by cavity ring-down spectroscopy

Science.gov (United States)

Johnson, Jennifer E.; Rella, Chris W.

2017-08-01

Cavity ring-down spectrometers have generally been designed to operate under conditions in which the background gas has a constant composition. However, there are a number of observational and experimental situations of interest in which the background gas has a variable composition. In this study, we examine the effect of background gas composition on a cavity ring-down spectrometer that measures δ18O-H2O and δ2H-H2O values based on the amplitude of water isotopologue absorption features around 7184 cm-1 (L2120-i, Picarro, Inc.). For background mixtures balanced with N2, the apparent δ18O values deviate from true values by -0.50 ± 0.001 ‰ O2 %-1 and -0.57 ± 0.001 ‰ Ar %-1, and apparent δ2H values deviate from true values by 0.26 ± 0.004 ‰ O2 %-1 and 0.42 ± 0.004 ‰ Ar %-1. The artifacts are the result of broadening, narrowing, and shifting of both the target absorption lines and strong neighboring lines. While the background-induced isotopic artifacts can largely be corrected with simple empirical or semi-mechanistic models, neither type of model is capable of completely correcting the isotopic artifacts to within the inherent instrument precision. The development of strategies for dynamically detecting and accommodating background variation in N2, O2, and/or Ar would facilitate the application of cavity ring-down spectrometers to a new class of observations and experiments.

Matrix and reservoir-type multipurpose vaginal rings for controlled release of dapivirine and levonorgestrel.

Science.gov (United States)

Boyd, Peter; Fetherston, Susan M; McCoy, Clare F; Major, Ian; Murphy, Diarmaid J; Kumar, Sandeep; Holt, Jonathon; Brimer, Andrew; Blanda, Wendy; Devlin, Brid; Malcolm, R Karl

2016-09-10

A matrix-type silicone elastomer vaginal ring providing 28-day continuous release of dapivirine (DPV) - a lead candidate human immunodeficiency virus type 1 (HIV-1) microbicide compound - has recently demonstrated moderate levels of protection in two Phase III clinical studies. Here, next-generation matrix and reservoir-type silicone elastomer vaginal rings are reported for the first time offering simultaneous and continuous in vitro release of DPV and the contraceptive progestin levonorgestrel (LNG) over a period of between 60 and 180days. For matrix-type vaginal rings comprising initial drug loadings of 100, 150 or 200mg DPV and 0, 16 or 32mg LNG, Day 1 daily DPV release values were between 4132 and 6113μg while Day 60 values ranged from 284 to 454μg. Daily LNG release ranged from 129 to 684μg on Day 1 and 2-91μg on Day 60. Core-type rings comprising one or two drug-loaded cores provided extended duration of in vitro release out to 180days, and maintained daily drug release rates within much narrower windows (either 75-131μg/day or 37-66μg/day for DPV, and either 96-150μg/day or 37-57μg/day for LNG, depending on core ring configuration and ignoring initial lag release effect for LNG) compared with matrix-type rings. The data support the continued development of these devices as multi-purpose prevention technologies (MPTs) for HIV prevention and long-acting contraception. Copyright © 2016 Elsevier B.V. All rights reserved.

Systematic comparison of FWM conversion efficiency in silicon waveguides and MRRs

DEFF Research Database (Denmark)

Xiong, Meng; Ding, Yunhong; Ou, Haiyan

2013-01-01

Wavelength conversion based on four-wave mixing is theoretically compared in silicon micro-ring resonators and nanowires under the effect of nonlinear loss. The impact of the bus waveguide length and MRR position are also quantified....

Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface

International Nuclear Information System (INIS)

Zafar, Sufi; D'Emic, Christopher; Afzali, Ali; Fletcher, Benjamin; Zhu, Y; Ning, Tak

2011-01-01

Silicon nanowire field effect transistor sensors with SiO 2 /HfO 2 as the gate dielectric sensing surface are fabricated using a top down approach. These sensors are optimized for pH sensing with two key characteristics. First, the pH sensitivity is shown to be independent of buffer concentration. Second, the observed pH sensitivity is enhanced and is equal to the Nernst maximum sensitivity limit of 59 mV/pH with a corresponding subthreshold drain current change of ∼ 650%/pH. These two enhanced pH sensing characteristics are attributed to the use of HfO 2 as the sensing surface and an optimized fabrication process compatible with silicon processing technology.

Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface.

Science.gov (United States)

Zafar, Sufi; D'Emic, Christopher; Afzali, Ali; Fletcher, Benjamin; Zhu, Y; Ning, Tak

2011-10-07

Silicon nanowire field effect transistor sensors with SiO(2)/HfO(2) as the gate dielectric sensing surface are fabricated using a top down approach. These sensors are optimized for pH sensing with two key characteristics. First, the pH sensitivity is shown to be independent of buffer concentration. Second, the observed pH sensitivity is enhanced and is equal to the Nernst maximum sensitivity limit of 59 mV/pH with a corresponding subthreshold drain current change of ∼ 650%/pH. These two enhanced pH sensing characteristics are attributed to the use of HfO(2) as the sensing surface and an optimized fabrication process compatible with silicon processing technology.

Improved silicon surface passivation of APCVD Al2O3 by rapid thermal annealing

NARCIS (Netherlands)

Black, L.E.; Allen, T.; McIntosh, K.R.; Cuévas, A.

2016-01-01

Short-duration post-deposition thermal treatments at temperatures above those normally used for annealing activation have the potential to further improve the already excellent passivation of crystalline silicon (c-Si) achieved by Al2O3, but have so far received little attention. In this work we

Characterization of stain etched p-type silicon in aqueous HF solutions containing HNO{sub 3} or KMnO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Mogoda, A.S., E-mail: awad_mogoda@hotmail.com [Department of Chemistry, Faculty of Science, Cairo University, Giza (Egypt); Ahmad, Y.H.; Badawy, W.A. [Department of Chemistry, Faculty of Science, Cairo University, Giza (Egypt)

2011-04-15

Research highlights: {yields} Stain etching of p-Si in aqueous HF solutions containing HNO{sub 3} or KMnO{sub 4} was investigated. {yields} The electrical conductivity of the etched Si surfaces was measured using impedance technique. {yields} Scanning electron microscope and energy disperse X-ray were used to analyze the etched surfaces. {yields} Etching in aqueous HF solution containing HNO{sub 3} led to formation of a porous silicon layer. {yields} The formation of the porous silicon layer in HF/KMnO{sub 4} was accompanied by deposition of K{sub 2}SiF{sub 6} on the pores surfaces. - Abstract: Stain etching of p-type silicon in hydrofluoric acid solutions containing nitric acid or potassium permanganate as an oxidizing agent has been examined. The effects of etching time, oxidizing agent and HF concentrations on the electrochemical behavior of etched silicon surfaces have been investigated by electrochemical impedance spectroscopy (EIS). An electrical equivalent circuit was used for fitting the impedance data. The morphology and the chemical composition of the etched Si surface were studied using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) techniques, respectively. A porous silicon layer was formed on Si etched in HF solutions containing HNO{sub 3}, while etching in HF solutions containing KMnO{sub 4} led to the formation of a porous layer and simultaneous deposition of K{sub 2}SiF{sub 6} inside the pores. The thickness of K{sub 2}SiF{sub 6} layer increases with increasing the KMnO{sub 4} concentration and decreases as the concentration of HF increases.

Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Johnston, M.D.; Barati, M. [Department of Materials Science and Engineering, The University of Toronto, 184 College Street, Toronto, Ont. (Canada)

2010-12-15

The possibility of refining metallurgical grade silicon to a high-purity product for solar cell applications by the slagging of impurity elements was investigated. Distribution coefficients were determined for B, Ca, Mg, Fe, K and P between magnesia or alumina saturated Al{sub 2}O{sub 3}-CaO-MgO-SiO{sub 2} and Al{sub 2}O{sub 3}-BaO-SiO{sub 2} slags and silicon at 1500 C. The partitioning of the impurity elements between molten silicon and slag was examined in terms of basicity and oxygen potential of the slag, with particular focus on the behaviour of boron and phosphorus. The experimental results showed that both of these aspects of slag chemistry have a significant influence on the distribution coefficient of B and P. Increasing the oxygen potential by additions of silica was found to increase the distribution coefficients for both B and P. Increasing the basicity of the slag was not always effective in achieving high removal of these elements from silicon as excess amounts of basic oxides lower the activity of silica and consequently the oxygen potential. The extent of this effect is such that increasing basicity can lead to a decrease in distribution coefficient. Increasing lime in the slag increased distribution coefficients for B and P, but this counterbalancing effect was such that distributions were the lowest in barium-containing slags, despite barium oxide being the most basic of the fluxes used in this study. The highest removal efficiencies achieved were of the order of 80% and 90% for B and P, respectively. It was demonstrated that for the removal of B and P from metallurgical-grade silicon to solar-grade levels, a slag mass about 5 times the mass of silicon would be required. (author)

Three-dimensional amorphous silicon solar cells on periodically ordered ZnO nanocolumns

Czech Academy of Sciences Publication Activity Database

Neykova, Neda; Moulin, E.; Campa, A.; Hruška, Karel; Poruba, Aleš; Stückelberger, M.; Haug, F.J.; Topič, M.; Ballif, C.; Vaněček, Milan

2015-01-01

Roč. 212, č. 8 (2015), s. 1823-1829 ISSN 1862-6300 R&D Projects: GA MŠk 7E12029; GA ČR(CZ) GA14-05053S EU Projects: European Commission(XE) 283501 - FAST TRACK Institutional support: RVO:68378271 Keywords : amorphous materials * hydrothermal growth * nanostructures * silicon * solar cells * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.648, year: 2015

Lubrication of ceramics in ring/cylinder applications

International Nuclear Information System (INIS)

Gaydos, P.A.; Dufrane, K.F.

1989-01-01

In support of efforts to apply ceramics to advanced heat engines, a study was performed of the wear mechanisms of ceramics at the ring/cylinder interface. A laboratory apparatus was constructed to reproduce most of the conditions of an actual engine but used easily prepared ring and cylinder specimens to facilitate their fabrication. Plasma-sprayed coatings of Cr 2 O 3 and hypersonic flame-sprayed coatings of cobalt-bonded WC performed particularly well as ring coatings. Similar performance was obtained with these coatings operating against SiC, Si 3 N 4 , SiC whisker-reinforced Al 2 O 3 and Cr 2 O 2 coatings. The study demonstrated the critical need for lubrication and evaluated the performance of two available lubricants

Electronic and local atomistic structure of MgSiO3 glass under pressure: a study of X-ray Raman scattering at the silicon and magnesium L-edges

Science.gov (United States)

Fukui, Hiroshi; Hiraoka, Nozomu

2018-02-01

We applied X-ray Raman scattering technique to MgSiO3 glass, a precursor to magnesium silicate melts, with respect to magnesium and silicon under high-pressure conditions as well as some polycrystalline phases of MgSiO3 at ambient conditions. We also performed ab initio calculations to interpret the X-ray Raman spectra. Experimentally obtained silicon L-edge spectra indicate that the local environment around silicon started changing at pressure above 10 GPa, where the electronic structure of oxygen is known to change. In contrast, the shape of the magnesium L-edge spectrum changed below 10 GPa. This indicates that the magnesium sites in MgSiO3 glass first distort and that the local structure around magnesium shows a wide variation under pressure. The framework structure consisting of silicon and oxygen changed above 10 GPa, where the coordination number of silicon was more than four. Our results imply that 6-oxygen-coordinated silicon was formed above 20 GPa.

Evidence for Quantisation in Planetary Ring Systems

OpenAIRE

WAYTE, RICHARD

2017-01-01

Absolute radial positions of the main features in Saturn's ring system have been calculated by adapting the quantum theory of atomic spectra. Fine rings superimposed upon broad rings are found to be covered by a harmonic series of the form N α A(r)1/2, where N and A are integers. Fourier analysis of the ring system shows that the spectral amplitude fits a response profile which is characteristic of a resonant system. Rings of Jupiter, Uranus and Neptune also obey the same rules. Involvement o...

Surface effects in segmented silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Kopsalis, Ioannis

2017-05-15

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO{sub 2} layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO{sub 2} and at the Si-SiO{sub 2} interface. In this thesis the surface radiation damage of the Si-SiO{sub 2} system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO{sub 2} of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface

Surface effects in segmented silicon sensors

International Nuclear Information System (INIS)

Kopsalis, Ioannis

2017-05-01

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface. In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

Upconversion photoluminescence of epitaxial Yb{sup 3+}/Er{sup 3+} codoped ferroelectric Pb(Zr,Ti)O{sub 3} films on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yang, E-mail: zhangy_acd@hotmail.com [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Kämpfe, Thomas [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Bai, Gongxun [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China); Mietschke, Michael; Yuan, Feifei; Zopf, Michael [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Abel, Stefan [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Eng, Lukas M. [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Hühne, Ruben [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Fompeyrine, Jean [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Ding, Fei, E-mail: f.ding@ifw-dresden.de [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Schmidt, Oliver G. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer strasse 70, 09107 Chemnitz (Germany)

2016-05-31

Thin films of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} (PZT:Yb/Er) have been epitaxially grown on the SrTiO{sub 3} buffered Si wafer by pulsed laser deposition. Strong upconversion photoluminescence was observed in the PZT:Yb/Er thin film. Using piezoresponse force microscopy, polar domains in the PZT:Yb/Er film can be reversibly switched with a phase change of 180°. Ferroelectric hysteresis loop shape with a well-saturated response was observed. The epitaxially grown lanthanide-doped PZT on silicon opens up a promising route to the integration of luminescent functional oxides on the silicon platform. - Highlights: • Epitaxial growth of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} films on SrTiO{sub 3} buffered silicon • Upconversion emissions were obtained from the lanthanide ion doped thin films. • Saturated ferroelectric hysteresis loops were observed. • Polar domains were switched by PFM with a phase change of 180°.

Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

Science.gov (United States)

Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

2015-05-20

In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

High-silicon 238PuO2 fuel characterization study: Half module impact tests

International Nuclear Information System (INIS)

Reimus, M.A.H.

1997-01-01

The General-Purpose Heat Source (GPHS) provides power for space missions by transmitting the heat of [sup 238]Pu decay to an array of thermoelectric elements. The modular GPHS design was developed to address both survivability during launch abort and return from orbit. Previous testing conducted in support of the Galileo and Ulysses missions documented the response of GPHSs to a variety of fragment- impact, aging, atmospheric reentry, and Earth-impact conditions. The evaluations documented in this report are part of an ongoing program to determine the effect of fuel impurities on the response of the heat source to conditions baselined during the Galileo/Ulysses test program. In the first two tests in this series, encapsulated GPHS fuel pellets containing high levels of silicon were aged, loaded into GPHS module halves, and impacted against steel plates. The results show no significant differences between the response of these capsules and the behavior of relatively low-silicon fuel pellets tested previously

Role of water in the tribochemical removal of bare silicon

Energy Technology Data Exchange (ETDEWEB)

Chen, Cheng; Xiao, Chen [Tribology Research Institute, National Traction Power Laboratory, Southwest Jiaotong University, Chengdu 610031 (China); Wang, Xiaodong [Center of Micro/Nano Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Zhang, Peng; Chen, Lei; Qi, Yaqiong [Tribology Research Institute, National Traction Power Laboratory, Southwest Jiaotong University, Chengdu 610031 (China); Qian, Linmao, E-mail: linmao@swjtu.edu.cn [Tribology Research Institute, National Traction Power Laboratory, Southwest Jiaotong University, Chengdu 610031 (China)

2016-12-30

Highlights: • The wear of bare silicon against SiO{sub 2} micro-spherical tip is a tribochemical process with participation of water. • The water amount at Si/SiO{sub 2} interface plays a significant role on the wear of bare silicon. • The role of water relies on the hydroxylation by auto-ionized OH{sup −}, the hydrolysis of H{sub 2}O molecules, and the dissolution of SiO{sub m}H{sub n} in water. - Abstract: Nanowear tests of bare silicon against a SiO{sub 2} microsphere were conducted in air (relative humidity [RH] = 0%–89%) and water using an atomic force microscope. Experimental results revealed that the water played an important role in the tribochemical wear of the bare silicon. A hillock-like wear trace with a height of 0.7 nm was generated on the bare silicon surface in dry air. As the RH increased, the wear depth increased and reached the maximum level in water. Analysis of frictional dissipated energy suggested that the wear of the bare silicon was not dominated by mechanical interactions. High-resolution transmission electron microscopy detection demonstrated that the silicon atoms and crystal lattice underneath the worn area maintained integral perfectly and thus further confirmed the tribochemical wear mechanism of the bare silicon. Finally, the role of water in the tribochemical wear of the bare silicon may be explained by the following three aspects: the hydroxylation by hydroxyl ions auto-ionized in water, the hydrolytic reaction of water molecules, and the dissolution of the tribochemical product SiO{sub m}H{sub n} in liquid water. With increasing RH, a greater water amount would adsorb to the Si/SiO{sub 2} interface and induce a more serious tribochemical wear on the bare silicon surface. The results of this paper may provide further insight into the tribochemical removal mechanism of bare monocrystalline silicon and furnish the wider reaction cognition for chemical mechanical polishing.

Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

Directory of Open Access Journals (Sweden)

Taweewat Krajangsang

2014-01-01

Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

Plasma-enhanced atomic-layer-deposited MoO{sub x} emitters for silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Ziegler, Johannes; Schneider, Thomas; Sprafke, Alexander N. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Mews, Mathias; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Silicon-Photovoltaics, Berlin (Germany); Kaufmann, Kai [Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Germany); University of Applied Sciences, Hochschule Anhalt Koethen, Koethen (Germany); Wehrspohn, Ralf B. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Fraunhofer Institute for Mechanics of Materials IWM Halle, Halle (Germany)

2015-09-15

A method for the deposition of molybdenum oxide (MoO{sub x}) with high growth rates at temperatures below 200 C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO{sub x} films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed. (orig.)

Computer simulation for the formation of the insulator layer of silicon-on-insulator devices by N sup + and O sup + Co-implantation

CERN Document Server

Lin Qing; Xie Xin Yun; Lin Chenglu; Liu Xiang Hua

2002-01-01

A buried sandwiched layer consisting of silicon dioxide (upper part), silicon oxynitride (medium part) and silicon nitride (lower part) is formed by N sup + and O sup + co-implantation in silicon wafers at a constant temperature of 550 degree C. The microstructure is performed by cross-sectional transmission electron microscopy. To predict the quality of the buried sandwiched layer, the authors study the computer simulation for the formation of the SIMON (separated by implantation of oxygen and nitrogen) structure. The simulation program for SIMOX (separated by implantation of oxygen) is improved in order to be applied in O sup + and N sup + co-implantation on the basis of different formation mechanism between SIMOX and SIMNI (separated by implantation of nitrogen) structures. There is a good agreement between experiment and simulation results verifying the theoretical model and presumption in the program

Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells

International Nuclear Information System (INIS)

Fay, Sylvie; Steinhauser, Jerome; Nicolay, Sylvain; Ballif, Christophe

2010-01-01

Conductive zinc oxide (ZnO) grown by low pressure chemical vapor deposition (LPCVD) technique possesses a rough surface that induces an efficient light scattering in thin film silicon (TF Si) solar cells, which makes this TCO an ideal candidate for contacting such devices. IMT-EPFL has developed an in-house LPCVD process for the deposition of nanotextured boron doped ZnO films used as rough TCO for TF Si solar cells. This paper is a general review and synthesis of the study of the electrical, optical and structural properties of the ZnO:B that has been performed at IMT-EPFL. The influence of the free carrier absorption and the grain size on the electrical and optical properties of LPCVD ZnO:B is discussed. Transport mechanisms at grain boundaries are studied. It is seen that high doping of the ZnO grains facilitates the tunnelling of the electrons through potential barriers that are located at the grain boundaries. Therefore, even if these potential barriers increase after an exposition of the film to a humid atmosphere, the heavily doped LPCVD ZnO:B layers show a remarkable stable conductivity. However, the introduction of diborane in the CVD reaction induces also a degradation of the intra-grain mobility and increases over-proportionally the optical absorption of the ZnO:B films. Hence, the necessity to finely tune the doping level of LPCVD ZnO:B films is highlighted. Finally, the next challenges to push further the optimization of LPCVD ZnO:B films for thin film silicon solar cells are discussed, as well as some remarkable record cell results achieved with LPCVD ZnO:B as front electrode.

The role of ring current O+ in the formation of stable auroral red arcs

International Nuclear Information System (INIS)

Kozyra, J.U.; Cravens, T.E.; Nagy, A.F.; Shelley, E.G.; Comfort, R.H.; Brace, L.H.

1987-01-01

Coulomb collisions between ring current protons and thermal electrons were first proposed by Cole (1965) as the energy source for stable auroral red (SAR) arcs. Recent observations have shown that the ring current and magnetospheric plasma contain significant amounts of heavy ions (Johnson et al., 1977; Young et al., 1977; Geiss et al., 1978; and others). In fact, the ring current is often dominated by heavy ions at those energies (E ≤ 17 keV) important for Coulomb collisions on SAR arc field lines (Kozyra et al., 1986a). Observations (during four SAR arcs in 1981) of thermal and energetic ion populations by the Dynamics Explorer 1 satellite in the magnetospheric energy source region and nearly simultaneous Langmuir probe measurements of enhanced electron temperatures by Dynamics Explorer 2 within the SAR arc at F region heights have allowed the authors to examine the role of heavy ions in the formation of SAR arcs. They find that (1) sufficient energy is transferred to the electron gas at high altitudes via Coulomb collisions between the observed ring current ions and thermal electrons to support the enhanced (SAR arc) F region electron temperatures measured on these field lines, (2) the latitudinal variation in the electron heating rates calculated using observed ion populations is consistent with the observed variation in electron temperature across the SAR arc, and (3) in all cases, ring current O + is the major source of energy for the SAR arcs. This implies a relationship between the heavy ion content of the magnetospheric plasma and the occurrence frequency and intensity of SAR arcs

Contribution to the study of rectification at the metal-semiconductor contact: analysis of aging in silicon Schottky diodes

International Nuclear Information System (INIS)

Ponpon, J.-P.

1979-01-01

The formation of the barrier height and the aging of metal-semiconductor contacts during exposure to air have been studied. The evolution of the electrical characteristics, especially the barrier height, of silicon Schottky diodes results from the diffusion of oxygen through the electrode and its accumulation at the interface. The diffusion coefficient of oxygen has been deduced for each metal used. In a first step the oxygen neutralize a fixed positive charge which remains at the semiconductor surface after etching; then, as silicon is oxidized, a MIS device is formed. Similar results have been obtained in the case of germanium, while no aging appears with cadmium telluride. In this case the barrier height seems to be determined by chemical reactions at the interface [fr

Suppression effect of silicon (Si on Er3+ 1.54μm excitation in ZnO thin films

Directory of Open Access Journals (Sweden)

Bo Xu

2016-08-01

Full Text Available We have investigated the photoluminescence (PL characteristics of ZnO:Er thin films on Si (100 single crystal and SiO2-on-silicon (SiO2 substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS, X-ray diffraction (XRD and atomic force microscope (AFM were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS. Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT, PL (1.54μm intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak at 1.15μm from silicon (Si appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er3+ 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er3+ was very low when compared with silicon nanocrystal (Si-NC. Both made the PL (1.54μm intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.

Structure and physical properties of silicon clusters and of vacancy clusters in bulk silicon

International Nuclear Information System (INIS)

Sieck, A.

2000-01-01

In this thesis the growth-pattern of free silicon clusters and vacancy clusters in bulk silicon is investigated. The aim is to describe and to better understand the cluster to bulk transition. Silicon structures in between clusters and solids feature new interesting physical properties. The structure and physical properties of silicon clusters can be revealed by a combination of theory and experiment, only. Low-energy clusters are determined with different optimization techniques and a density-functional based tight-binding method. Additionally, infrared and Raman spectra, and polarizabilities calculated within self-consistent field density-functional theory are provided for the smaller clusters. For clusters with 25 to 35 atoms an analysis of the shape of the clusters and the related mobilities in a buffer gas is given. Finally, the clusters observed in low-temperature experiments are identified via the best match between calculated properties and experimental data. Silicon clusters with 10 to 15 atoms have a tricapped trigonal prism as a common subunit. Clusters with up to about 25 atoms follow a prolate growth-path. In the range from 24 to 30 atoms the geometry of the clusters undergoes a transition towards compact spherical structures. Low-energy clusters with up to 240 atoms feature a bonding pattern strikingly different from the tetrahedral bonding in the solid. It follows that structures with dimensions of several Angstroem have electrical and optical properties different from the solid. The calculated stabilities and positron-lifetimes of vacancy clusters in bulk silicon indicate the positron-lifetimes of about 435 ps detected in irradiated silicon to be related to clusters of 9 or 10 vacancies. The vacancies in these clusters form neighboring hexa-rings and, therefore, minimize the number of dangling bonds. (orig.)

Silicon-containing polyoxadiazoles-synthesis and perspectives.

Science.gov (United States)

Bruma, Maria; Köpnick, Thomas

2005-11-30

A review is presented on those polymers which contain diphenylsilylene units and 1,3,4-oxadiazole rings either in the main chain or in the pendent groups. The synthesis of silicon-containing monomers as well as of the polyoxadiazoles based on them is described. The properties of these polymers, such as solubility, film forming ability, thermal stability, electrochemical behavior and photoluminescence properties, and their potential applications are discussed.

Plasmon-Induced Transparency Based on Triple Arc-Ring Resonators

Directory of Open Access Journals (Sweden)

Guang-Xi Dong

2018-06-01

Full Text Available This paper presents a plasmon-induced transparency (PIT using an easy-fabricating metamaterial composed of three pieces of metallic arc-rings on top of a dielectric substrate. The transmission of the transparent peak of 1.32 THz reaches approximately 93%. The utilization of the coupled Lorentzian oscillator model and the distribution of electromagnetic fields together explain the cause of the transparent peak. The simulation results further demonstrate that the bandwidth of the transmission peak can be narrowed by changing the sizes of the arc-rings. Moreover, an on/off effect based on the transparent peak is discussed by introducing photosensitive silicon into the air gaps of the suggested metamaterial structure.

Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

International Nuclear Information System (INIS)

Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

2005-01-01

Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

A Microwave Ring-Resonator Sensor for Non-Invasive Assessment of Meat Aging

Directory of Open Access Journals (Sweden)

Muhammad Taha Jilnai

2016-01-01

Full Text Available The assessment of moisture loss from meat during the aging period is a critical issue for the meat industry. In this article, a non-invasive microwave ring-resonator sensor is presented to evaluate the moisture content, or more precisely water holding capacity (WHC of broiler meat over a four-week period. The developed sensor has shown significant changes in its resonance frequency and return loss due to reduction in WHC in the studied duration. The obtained results are also confirmed by physical measurements. Further, these results are evaluated using the Fricke model, which provides a good fit for electric circuit components in biological tissue. Significant changes were observed in membrane integrity, where the corresponding capacitance decreases 30% in the early aging (0D-7D period. Similarly, the losses associated with intracellular and extracellular fluids exhibit changed up to 42% and 53%, respectively. Ultimately, empirical polynomial models are developed to predict the electrical component values for a better understanding of aging effects. The measured and calculated values are found to be in good agreement.

A Microwave Ring-Resonator Sensor for Non-Invasive Assessment of Meat Aging

Science.gov (United States)

Jilani, Muhammad Taha; Wen, Wong Peng; Cheong, Lee Yen; ur Rehman, Muhammad Zaka

2016-01-01

The assessment of moisture loss from meat during the aging period is a critical issue for the meat industry. In this article, a non-invasive microwave ring-resonator sensor is presented to evaluate the moisture content, or more precisely water holding capacity (WHC) of broiler meat over a four-week period. The developed sensor has shown significant changes in its resonance frequency and return loss due to reduction in WHC in the studied duration. The obtained results are also confirmed by physical measurements. Further, these results are evaluated using the Fricke model, which provides a good fit for electric circuit components in biological tissue. Significant changes were observed in membrane integrity, where the corresponding capacitance decreases 30% in the early aging (0D-7D) period. Similarly, the losses associated with intracellular and extracellular fluids exhibit changed up to 42% and 53%, respectively. Ultimately, empirical polynomial models are developed to predict the electrical component values for a better understanding of aging effects. The measured and calculated values are found to be in good agreement. PMID:26805828

Stabilisation of the [6]-prismane structure by silicon substitution

Indian Academy of Sciences (India)

Asif Equbal

structure becomes increasingly more stable, relative to the two isolated benzene (like) structures. A similar trend is observed ... a theoretical point of view.1–4 However, experimental evidence .... For multi-Si-substituted benzene, the stability of the dimer depends on .... The light green color in the ring indicates silicon atoms.

Silicon graphene waveguide tunable broadband microwave photonics phase shifter.

Science.gov (United States)

Capmany, José; Domenech, David; Muñoz, Pascual

2014-04-07

We propose the use of silicon graphene waveguides to implement a tunable broadband microwave photonics phase shifter based on integrated ring cavities. Numerical computation results show the feasibility for broadband operation over 40 GHz bandwidth and full 360° radiofrequency phase-shift with a modest voltage excursion of 0.12 volt.

Development of a circular shape Si-PM-based detector ring for breast-dedicated PET system

Science.gov (United States)

Nakanishi, Kouhei; Yamamoto, Seiichi; Watabe, Hiroshi; Abe, Shinji; Fujita, Naotoshi; Kato, Katsuhiko

2018-02-01

In clinical situations, various breast-dedicated positron emission tomography (PET) systems have been used. However, clinical breast-dedicated PET systems have polygonal detector ring. Polygonal detector ring sometimes causes image artifact, so complicated reconstruction algorithm is needed to reduce artifact. Consequently, we developed a circular detector ring for breast-dedicated PET to obtain images without artifact using a simple reconstruction algorithm. We used Lu1.9Gd0.1SiO5 (LGSO) scintillator block which was made of 1.5 x 1.9 x 15 mm pixels that were arranged in an 8 x 24 matrix. As photodetectors, we used silicon photomultiplier (Si-PM) arrays whose channel size was 3 x 3 mm. A detector unit was composed of four scintillator blocks, 16 Si-PM arrays and a light guide. The developed detector unit had angled configuration since the light guide was bending. A detector unit had three gaps with an angle of 5.625° between scintillator blocks. With these configurations, we could arrange 64 scintillator blocks in nearly circular shape (regular 64-sided polygon) using 16 detector units. The use of the smaller number of detector units could reduce the size of the front-end electronics circuits. The inner diameter of the developed detector ring was 260 mm. This size was similar to those of brain PET systems, so our breast-dedicated PET detector ring can measure not only breast but also brain. Measured radial, tangential and axial spatial resolution of the detector ring reconstructed by the filtered back-projection (FBP) algorithm were 2.1 mm FWHM, 2.0 mm FWHM and 1.7 mm FWHM at center of field of view (FOV), respectively. The sensitivity was 2.0% at center of the axial FOV. With the developed detector ring, we could obtain high resolution image of the breast phantom and the brain phantom. We conclude that our developed Si-PM-based detector ring is promising for a high resolution breast-dedicated PET system that can also be used for brain PET system.

Silicon based light-emitting materials and devices

International Nuclear Information System (INIS)

Chen Weide

1999-01-01

Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

Timing performance of the silicon PET insert probe.

Science.gov (United States)

Studen, A; Burdette, D; Chesi, E; Cindro, V; Clinthorne, N H; Cochran, E; Grosicar, B; Kagan, H; Lacasta, C; Linhart, V; Mikuz, M; Stankova, V; Weilhammer, P; Zontar, D

2010-01-01

Simulation indicates that PET image could be improved by upgrading a conventional ring with a probe placed close to the imaged object. In this paper, timing issues related to a PET probe using high-resistivity silicon as a detector material are addressed. The final probe will consist of several (four to eight) 1-mm thick layers of silicon detectors, segmented into 1 x 1 mm(2) pads, each pad equivalent to an independent p + nn+ diode. A proper matching of events in silicon with events of the external ring can be achieved with a good timing resolution. To estimate the timing performance, measurements were performed on a simplified model probe, consisting of a single 1-mm thick detector with 256 square pads (1.4 mm side), coupled with two VATAGP7s, application-specific integrated circuits. The detector material and electronics are the same that will be used for the final probe. The model was exposed to 511 keV annihilation photons from an (22)Na source, and a scintillator (LYSO)-PMT assembly was used as a timing reference. Results were compared with the simulation, consisting of four parts: (i) GEANT4 implemented realistic tracking of electrons excited by annihilation photon interactions in silicon, (ii) calculation of propagation of secondary ionisation (electron-hole pairs) in the sensor, (iii) estimation of the shape of the current pulse induced on surface electrodes and (iv) simulation of the first electronics stage. A very good agreement between the simulation and the measurements were found. Both indicate reliable performance of the final probe at timing windows down to 20 ns.

Si-O compound formation by oxygen ion implantation into silicon

International Nuclear Information System (INIS)

Hensel, E.; Wollschlaeger, K.; Kreissig, U.; Skorupa, W.; Schulze, D.; Finster, J.

1985-01-01

High dose oxygen ion implantation into silicon at 30 keV was performed to produce understoichiometric and stoichiometric surface oxide layers of approx. 160 nm thickness. The oxygen depth profile and oxide stoichiometry was determined by RBS and XPS. Si-O compound formation was found by IR spectroscopy and XPS in the unannealed samples as well as after target heating, furnace or flash lamp annealing. As implanted understoichiometric layers consist of random bonding like SiOsub(x) (O 2 after annealing. Unannealed stoichiometric layers are bond strained SiO 2 . The activation energies of demixing and of the annealing of bond strains are determined to 0.19 and 0.13 eV, respectively. The removing of bond strains occurs at temperatures >= 800 C in a time shorter than 1 s. The SiO 2 /Si transition region of unannealed stoichiometric layers consists of SiOsub(x) with an extent of about 10 nm. After annealing this extent diminishes to 0.8 to 1 nm in consequence of oxidation by excess oxygen from the overstoichiometric oxide region. This thickness is comparable with that of thermal oxide. (author)

Modeling of an Aged Porous Silicon Humidity Sensor Using ANN Technique

Directory of Open Access Journals (Sweden)

Tarikul ISLAM

2006-10-01

Full Text Available Porous silicon (PS sensor based on capacitive technique used for measuring relative humidity has the advantages of low cost, ease of fabrication with controlled structure and CMOS compatibility. But the response of the sensor is nonlinear function of humidity and suffers from errors due to aging and stability. One adaptive linear (ADALINE ANN model has been developed to model the behavior of the sensor with a view to estimate these errors and compensate them. The response of the sensor is represented by third order polynomial basis function whose coefficients are determined by the ANN technique. The drift in sensor output due to aging of PS layer is also modeled by adapting the weights of the polynomial function. ANN based modeling is found to be more suitable than conventional physical modeling of PS humidity sensor in changing environment and drift due to aging. It helps online estimation of nonlinearity as well as monitoring of the fault of the PS humidity sensor using the coefficients of the model.

SiO{sub 2} on silicon: behavior under heavy ion irradiation; SiO{sub 2} sur silicium: comportement sous irradiation avec des ions lourds

Energy Technology Data Exchange (ETDEWEB)

Rotaru, C

2004-03-15

Heavy ion irradiation was performed on a-SiO{sub 2} layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO{sub 2} is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO{sub 2} respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

Effects of aging on the structural, mechanical, and thermal properties of the silicone rubber current transformer insulation bushing for a 500 kV substation.

Science.gov (United States)

Wang, Zhigao; Zhang, Xinghai; Wang, Fangqiang; Lan, Xinsheng; Zhou, Yiqian

2016-01-01

In order to analyze the cracking and aging reason of the silicone rubber current transformer (CT) insulation bushing used for 8 years from a 500 kV alternating current substation, characteristics including Fourier transform infrared (FTIR) spectroscopy, mechanical properties analysis, hardness, and thermo gravimetric analysis have been carried out. The FTIR results indicated that the external surface of the silicone rubber CT insulation bushing suffered from more serious aging than the internal part, fracture of side chain Si-C bond was much more than the backbone. Mechanical properties and thermal stability results illustrated that the main aging reasons were the breakage of side chain Si-C bond and the excessive cross-linking reaction of the backbone. This study can provide valuable basis for evaluating degradation mechanism and aging state of the silicone rubber insulation bushing in electric power field.

Surface Effects in Segmented Silicon Sensors

OpenAIRE

Kopsalis, Ioannis

2017-01-01

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

Oxygen isotopes in tree rings are a good proxy for Amazon precipitation and El Niño-Southern Oscillation variability

Science.gov (United States)

Brienen, Roel J. W.; Helle, Gerd; Pons, Thijs L.; Guyot, Jean-Loup; Gloor, Manuel

2012-10-01

We present a unique proxy for the reconstruction of variation in precipitation over the Amazon: oxygen isotope ratios in annual rings in tropical cedar (Cedrela odorata). A century-long record from northern Bolivia shows that tree rings preserve the signal of oxygen isotopes in precipitation during the wet season, with weaker influences of temperature and vapor pressure. Tree ring δ18O correlates strongly with δ18O in precipitation from distant stations in the center and west of the basin, and with Andean ice core δ18O showing that the signal is coherent over large areas. The signal correlates most strongly with basin-wide precipitation and Amazon river discharge. We attribute the strength of this (negative) correlation mainly to the cumulative rainout processes of oxygen isotopes (Rayleigh distillation) in air parcels during westward transport across the basin. We further find a clear signature of the El Niño-Southern Oscillation (ENSO) in the record, with strong ENSO influences over recent decades, but weaker influence from 1925 to 1975 indicating decadal scale variation in the controls on the hydrological cycle. The record exhibits a significant increase in δ18O over the 20th century consistent with increases in Andean δ18O ice core and lake records, which we tentatively attribute to increased water vapor transport into the basin. Taking these data together, our record reveals a fresh path to diagnose and improve our understanding of variation and trends of the hydrological cycle of the world's largest river catchment.

Thermal endurance tests on silicone rubber specimens

International Nuclear Information System (INIS)

Warburton, C.

1977-07-01

Thermal endurance tests have been performed on a range of silicone rubber specimens at temperature above 300 0 C. It is suggested that the rubber mix A2426, the compound from which Wylfa sealing rings are manufactured, will fail at temperatures above 300 0 C within weeks. Hardness measurements show that this particular rubber performs in a similar manner to Walker's S.I.L./60. (author)

Silicon/HfO2 interface: Effects of proton irradiation

International Nuclear Information System (INIS)

Maurya, Savita; Radhakrishna, M.

2015-01-01

Substrate oxide interfaces are of paramount importance in deciding the quality of the semiconductor devices. In this work we have studied how 200 keV proton irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide on silicon substrate. Pre- and post-irradiation electrical measurements are used to quantify the effect of proton irradiation for varying electrode geometries. Proton irradiation introduces positive charge in the oxide and at the interface of Si/HfO 2 interface. The gate current is not very much affected under positive injection since the induced positive charge is compensated by the injected electrons. Current voltage characteristics under negative bias get affected by the proton irradiation

Corrosion of porous silicon in tetramethylammonium hydroxide solution

International Nuclear Information System (INIS)

Lai, Chuan; Li, Xue-Ming; Zou, Li-Ke; Chen, Qiang; Xie, Bin; Li, Yu-Lian; Li, Xiao-Lin; Tao, Zhi

2014-01-01

Highlights: • The corrosion of porous silicon in (CH 3 ) 4 NOH solution was studied. • The residue of corrosion products was a mixture of [(CH 3 ) 4 N] 2 SiO 3 and SiO 2 . • The effect factors for porous silicon corrosion were elaborately investigated. • The additive of ethanol in (CH 3 ) 4 NOH solution could reduce the corrosion rate. • The 1.0 M (CH 3 ) 4 NOH could act as an applicable and novel corrosion solution. - Abstract: Corrosion of porous silicon in tetramethylammonium hydroxide (TMAH) solution was studied using weight loss measurements and scanning electron microscope. The effects of temperature, concentration of TMAH and volume ratio of ethanol in 1.0 M TMAH on corrosion rate and corrosion time were elaborately investigated. The residue of corrosion products were characterized as a mixture of [(CH 3 ) 4 N] 2 SiO 3 and SiO 2 . A comparative test among TMAH, KOH and NaOH illustrated that the 1.0 M TMAH could act as an applicable and novel corrosion solution to remove porous silicon layer for determining the porosity of porous silicon

Internal Friction and Young's Modulus Measurements on SiO2 and Ta2O5 Films Done with an Ultra-High Q Silicon-Wafer Suspension

Directory of Open Access Journals (Sweden)

Granata M.

2015-04-01

Full Text Available In order to study the internal friction of thin films a nodal suspension system called GeNS (Gentle Nodal Suspension has been developed. The key features of this system are: i the possibility to use substrates easily available like silicon wafers; ii extremely low excess losses coming from the suspension system which allows to measure Q factors in excess of 2×108 on 3” diameter wafers; iii reproducibility of measurements within few percent on mechanical losses and 0.01% on resonant frequencies; iv absence of clamping; v the capability to operate at cryogenic temperatures. Measurements at cryogenic temperatures on SiO2 and at room temperature only on Ta2O5 films deposited on silicon are presented.

Fabrication and Characterization of Vertically Aligned ZnO Nanorod Arrays via Inverted Monolayer Colloidal Crystals Mask

Science.gov (United States)

Chen, Cheng; Ding, Taotao; Qi, Zhiqiang; Zhang, Wei; Zhang, Jun; Xu, Juan; Chen, Jingwen; Dai, Jiangnan; Chen, Changqing

2018-04-01

The periodically ordered ZnO nanorod (NR) arrays have been successfully synthesized via a hydrothermal approach on the silicon substrates by templating of the TiO2 ring deriving from the polystyrene (PS) nanosphere monolayer colloidal crystals (MCC). With the inverted MCC mask, sol-gel-derived ZnO seeds could serve as the periodic nucleation positions for the site-specific growth of ZnO NRs. The large-scale patterned arrays of single ZnO NR with good side-orientation can be readily produced. According to the experimental results, the as-integrated ZnO NR arrays showed an excellent crystal quality and optical property, very suitable for optoelectronic applications such as stimulated emitters and ZnO photonic crystal devices.

Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

Science.gov (United States)

Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

2016-06-28

Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

MOS structures containing silicon nanoparticles for memory device applications

International Nuclear Information System (INIS)

Nedev, N; Zlatev, R; Nesheva, D; Manolov, E; Levi, Z; Brueggemann, R; Meier, S

2008-01-01

Metal-oxide-silicon structures containing layers with amorphous or crystalline silicon nanoparticles in a silicon oxide matrix are fabricated by sequential physical vapour deposition of SiO x (x = 1.15) and RF sputtering of SiO 2 on n-type crystalline silicon, followed by high temperature annealing in an inert gas ambient. Depending on the annealing temperature, 700 deg. C or 1000 deg. C, amorphous or crystalline silicon nanoparticles are formed in the silicon oxide matrix. The annealing process is used not only for growing nanoparticles but also to form a dielectric layer with tunnelling thickness at the silicon/insulator interface. High frequency C-V measurements demonstrate that both types of structures can be charged negatively or positively by applying a positive or negative voltage on the gate. The structures with amorphous silicon nanoparticles show several important advantages compared to the nanocrystal ones, such as lower defect density at the interface between the crystalline silicon wafer and the tunnel silicon oxide, better retention characteristics and better reliability

Electrochemistry of porous and crystalline silicon electrodes in methylviologen solutions

NARCIS (Netherlands)

Kooij, Ernst S.; Despo, R.W.; Mulders, F.P.J.; Kelly, J.J.

1996-01-01

From measurements using stationary and rotating disc and ring-disc electrodes, it is concluded that the reduction reactions of the divalent methylviologen cation MV2+ (to MV+· and MV0) proceed via the conduction band of both porous and crystalline silicon. The product of the second reduction step

Using silicon nanostructures for the improvement of silicon solar cells' efficiency

International Nuclear Information System (INIS)

Torre, J. de la; Bremond, G.; Lemiti, M.; Guillot, G.; Mur, P.; Buffet, N.

2006-01-01

Silicon nanostructures (ns-Si) show interesting optical and electrical properties as a result of the band gap widening caused by quantum confinement effects. Along with their potential utilization for silicon-based light emitters' fabrication, they could also represent an appealing option for the improvement of energy conversion efficiency in silicon-based solar cells whether by using their luminescence properties (photon down-conversion) or the excess photocurrent produced by an improved high-energy photon's absorption. In this work, we report on the morphological and optical studies of non-stoichiometric silica (SiO x ) and silicon nitride (SiN x ) layers containing silicon nanostructures (ns-Si) in view of their application for solar cell's efficiency improvement. The morphological studies of the samples performed by transmission electron microscopy (TEM) unambiguously show the presence of ns-Si in a crystalline form for high temperature-annealed SiO x layers and for low temperature deposition of SiN x layers. The photoluminescence emission (PL) shows a rather high efficiency in both kind of layers with an intensity of only a factor ∼ 100 lower than that of porous silicon (pi-Si). The photocurrent spectroscopy (PC) shows a significant increase of absorption at high photon energy excitation most probably related to photon absorption within ns-Si quantized states. Moreover, the absorption characteristics obtained from PC spectra show a good agreement with the PL emission states unambiguously demonstrating a same origin, related to Q-confined excitons within ns-Si. Finally, the major asset of this material is the possibility to incorporate it to solar cells manufacturing processing for an insignificant cost

Suppression effect of silicon (Si) on Er{sup 3+} 1.54μm excitation in ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Xu, Bo; Lu, Fei, E-mail: lufei@sdu.edu.cn; Fan, Ranran [School of Information Science and Engineering, Shandong University, Jinan, Shandong 250100 (China); Ma, Changdong [Department of Radiation Oncology, Qilu Hospital, Shandong University, Jinan, Shandong 250100 (China)

2016-08-15

We have investigated the photoluminescence (PL) characteristics of ZnO:Er thin films on Si (100) single crystal and SiO{sub 2}-on-silicon (SiO{sub 2}) substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS), X-ray diffraction (XRD) and atomic force microscope (AFM) were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS). Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT), PL (1.54μm) intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak at 1.15μm from silicon (Si) appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er{sup 3+} 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er{sup 3+} was very low when compared with silicon nanocrystal (Si-NC). Both made the PL (1.54μm) intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.

High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors

KAUST Repository

Huang, Ruo-Gu; Tham, Douglas; Wang, Dunwei; Heath, James R.

2011-01-01

We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV) and low subthreshold swing (~80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors

KAUST Repository

Huang, Ruo-Gu

2011-06-24

We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV) and low subthreshold swing (~80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

Vertically aligned ZnO nanorods on porous silicon substrates: Effect of growth time

Directory of Open Access Journals (Sweden)

R. Shabannia

2015-04-01

Full Text Available Vertically aligned ZnO nanorods were successfully grown on porous silicon (PS substrates by chemical bath deposition at a low temperature. X-ray diffraction, field-emission scanning electron microscopy (FESEM, transmission electron microscopy (TEM, and photoluminescence (PL analyses were carried out to investigate the effect of growth duration (2 h to 8 h on the optical and structural properties of the aligned ZnO nanorods. Strong and sharp ZnO (0 0 2 peaks of the ZnO nanorods proved that the aligned ZnO nanorods were preferentially fabricated along the c-axis of the hexagonal wurtzite structure. FESEM images demonstrated that the ZnO nanorod arrays were well aligned along the c-axis and perpendicular to the PS substrates regardless of the growth duration. The TEM image showed that the top surfaces of the ZnO nanorods were round with a smooth curvature. PL spectra demonstrated that the ZnO nanorods grown for 5 h exhibited the sharpest and most intense PL peaks within the ultraviolet range among all samples.

Photon mass attenuation coefficients of a silicon resin loaded with WO3, PbO, and Bi2O3 Micro and Nano-particles for radiation shielding

Science.gov (United States)

Verdipoor, Khatibeh; Alemi, Abdolali; Mesbahi, Asghar

2018-06-01

Novel shielding materials for photons based on silicon resin and WO3, PbO, and Bi2O3 Micro and Nano-particles were designed and their mass attenuation coefficients were calculated using Monte Carlo (MC) method. Using lattice cards in MCNPX code, micro and nanoparticles with sizes of 100 nm and 1 μm was designed inside a silicon resin matrix. Narrow beam geometry was simulated to calculate the attenuation coefficients of samples against mono-energetic beams of Co60 (1.17 and 1.33 MeV), Cs137 (663.8 KeV), and Ba133 (355.9 KeV). The shielding samples made of nanoparticles had higher mass attenuation coefficients, up to 17% relative to those made of microparticles. The superiority of nano-shields relative to micro-shields was dependent on the filler concentration and the energy of photons. PbO, and Bi2O3 nanoparticles showed higher attenuation compared to WO3 nanoparticles in studied energies. Fabrication of novel shielding materials using PbO, and Bi2O3 nanoparticles is recommended for application in radiation protection against photon beams.

Catalytic oxidation of silicon by cesium ion bombardment

International Nuclear Information System (INIS)

Souzis, A.E.; Huang, H.; Carr, W.E.; Seidl, M.

1991-01-01

Results for room-temperature oxidation of silicon using cesium ion bombardment and low oxygen exposure are presented. Bombardment with cesium ions is shown to allow oxidation at O 2 pressures orders of magnitude smaller than with noble gas ion bombardment. Oxide layers of up to 30 A in thickness are grown with beam energies ranging from 20--2000 eV, O 2 pressures from 10 -9 to 10 -6 Torr, and total O 2 exposures of 10 0 to 10 4 L. Results are shown to be consistent with models indicating that initial oxidation of silicon is via dissociative chemisorption of O 2 , and that the low work function of the cesium- and oxygen-coated silicon plays the primary role in promoting the oxidation process

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

Science.gov (United States)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

Dependency of the regio- and stereoselectivity of intramolecular, ring-closing glycosylations upon the ring size

Directory of Open Access Journals (Sweden)

Patrick Claude

2011-12-01

Full Text Available Phenyl 3,4,6-tri-O-benzyl-2-O-(3-carboxypropionyl-1-thio-β-D-galactopyranoside (1 was condensed via its pentafluorophenyl ester 2 with 5-aminopentyl (4a, 4-aminobutyl (4b, 3-aminopropyl (4c and 2-aminoethyl 4,6-O-benzylidene-β-D-glucopyranoside (4d, prepared from the corresponding N-Cbz protected glucosides 3a–d, to give the corresponding 2-[3-(alkylcarbamoylpropionyl] tethered saccharides 5a–d. Intramolecular, ring closing glycosylation of the saccharides with NIS and TMSOTf afforded the tethered β(1→3 linked disaccharides 6a–c, the α(1→3 linked disaccharides 7a–d and the α(1→2 linked disaccharide 8d in ratios depending upon the ring size formed during glycosylation. No β(1→2 linked disaccharides were formed. Molecular modeling of saccharides 6–8 revealed that a strong aromatic stacking interaction between the aromatic parts of the benzyl and benzylidene protecting groups in the galactosyl and glucosyl moieties was mainly responsible for the observed regioselectivity and anomeric selectivity of the ring-closing glycosylation step.

A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

Energy Technology Data Exchange (ETDEWEB)

Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2013-11-01

Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

Mapping the magnetic field generated by a supercurrent in a ring of YBa2Cu3O7-δ

Science.gov (United States)

Sulca, P. D.; Gómez, R. W.

2017-11-01

We design and construct a device to map the magnetic field generated by a supercurrent in a rectangular cross section ring of YBa2Cu3O7-δ . For the measurements of the magnetic field, we develop a Gaussmeter based on a commercial Hall effect sensor coupled to an Arduino microprocessor. Our results show an asymmetric distribution of the magnetic field intensity measured at a certain distance along a plane parallel to the ring surface. The behavior of the magnetic field intensity with distance along the ring axis is closely related to what is expected for a toroid. Using the Biot-Savart law and the measured magnetic field values, the induced supercurrent is determined.

Comparison of PMMA, foldable silicone and foldable acrylic hydrophobic intraocular lenses in combined phacoemulsification and trabeculectomy Comparação entre lentes intra-oculares de PMMA, lentes dobráveis de silicone e lentes acrílicas hidrofóbicas dobráveis em cirurgias combinadas de facoemulsificação e trabeculectomia

Directory of Open Access Journals (Sweden)

Ernani Serpa Junior

2005-02-01

Full Text Available PURPOSE: To compare the postoperative results of phacotrabeculectomy with implantation of PMMA, foldable silicone or foldable hydrofobic acrylic intraocular lens (IOL. SETTING: Glaucoma unit, The Royal Liverpool University Hospital, Liverpool, United Kingdom. METHODS: We studied a total of 124 eyes of three consecutive groups of patients with glaucoma and cataract that underwent phacotrabeculectomy with implantation of a PMMA (30 eyes, a foldable silicone (57 eyes or a foldable acrylic (37 eyes IOL. Postoperative Snellen visual acuity and intraocular pressure (IOP, and early and late complications were assessed. All data were analyzed by means of c² test, Fisher's exact test, ANOVA/MANOVA tests or a combination whenever appropriate. RESULTS: In all three groups the early and late mean postoperative IOPs were significantly lower than the preoperative ones (p25 mmHg and hypotony (IOPOBJETIVO: Comparar os resultados pós-operatórios de facotrabeculectomias com implante de lentes intra-oculares de PMMA, dobráveis de silicone e acrílicas hidrofóbicas dobráveis. MÉTODOS: Estudo comparativo retrospectivo, realizado no Departamento de Glaucoma da "St. Paul's Eye Unit - The Royal Liverpool University Hospital", em Liverpool, Inglaterra, onde foram estudados um total de 124 olhos de três grupos consecutivos de pacientes com glaucoma e catarata que foram submetidos à cirurgia de facotrabeculectomia com implante de lentes intra-oculares (LIO de PMMA (30 olhos, dobráveis de silicone (57 olhos e acrílicas hidrofóbicas dobráveis (37 olhos. Foram registradas a visão e pressão intra-ocular (PIO pré e pós-operatória, assim como as complicações pós-operatórias precoces e tardias. Todos os dados foram analisados utilizando-se o teste c², teste exato de Fisher, teste de ANOVA/MANOVA ou uma combinação deles quando necessário. RESULTADOS: Nos três grupos as PIOs pós-operatórias precoces e tardias foram significativamente inferiores �

Transformation dynamics of Ni clusters into NiO rings under electron beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Knez, Daniel, E-mail: daniel.knez@felmi-zfe.at [Institute of Electron Microscopy and Nanoanalysis, Graz University of Technology, Steyrergasse 17, 8010 Graz (Austria); Graz Centre for Electron Microscopy, Steyrergasse 17, 8010 Graz (Austria); Thaler, Philipp; Volk, Alexander [Institute of Experimental Physics, Graz University of Technology, Petersgasse 16, 8010 Graz (Austria); Kothleitner, Gerald [Institute of Electron Microscopy and Nanoanalysis, Graz University of Technology, Steyrergasse 17, 8010 Graz (Austria); Graz Centre for Electron Microscopy, Steyrergasse 17, 8010 Graz (Austria); Ernst, Wolfgang E. [Institute of Experimental Physics, Graz University of Technology, Petersgasse 16, 8010 Graz (Austria); Hofer, Ferdinand [Institute of Electron Microscopy and Nanoanalysis, Graz University of Technology, Steyrergasse 17, 8010 Graz (Austria); Graz Centre for Electron Microscopy, Steyrergasse 17, 8010 Graz (Austria)

2017-05-15

We report the transformation of nickel clusters into NiO rings by an electron beam induced nanoscale Kirkendall effect. High-purity nickel clusters consisting of a few thousand atoms have been used as precursors and were synthesized with the superfluid helium droplet technique. Aberration-corrected, analytical scanning transmission electron microscopy was applied to oxidise and simultaneously analyse the nanostructures. The transient dynamics of the oxidation could be documented by time lapse series using high-angle annular dark-field imaging and electron energy-loss spectroscopy. A two-step Cabrera-Mott oxidation mechanism was identified. It was found that water adsorbed adjacent to the clusters acts as oxygen source for the electron beam induced oxidation. The size-dependent oxidation rate was estimated by quantitative EELS measurements combined with molecular dynamics simulations. Our findings could serve to better control sample changes during examination in an electron microscope, and might provide a methodology to generate other metal oxide nanostructures. - Highlights: • Beam induced conversion of Ni clusters into crystalline NiO rings has been observed. • Ni clusters were grown with the superfluid He-droplet technique. • oxidizeSTEM was utilized to investigate and simultaneously oxidize these clusters. • Oxidation dynamics was captured in real-time. • Cluster sizes and the oxidation rate were estimated via EELS and molecular dynamics.

Wide-range and fast thermally-tunable silicon photonic microring resonators using the junction field effect.

Science.gov (United States)

Wang, Xiaoxi; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

2016-10-03

Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.

Connections between Star Cluster Populations and Their Host Galaxy Nuclear Rings

Science.gov (United States)

Ma, Chao; de Grijs, Richard; Ho, Luis C.

2018-04-01

Nuclear rings are excellent laboratories for probing diverse phenomena such as the formation and evolution of young massive star clusters and nuclear starbursts, as well as the secular evolution and dynamics of their host galaxies. We have compiled a sample of 17 galaxies with nuclear rings, which are well resolved by high-resolution Hubble and Spitzer Space Telescope imaging. For each nuclear ring, we identified the ring star cluster population, along with their physical properties (ages, masses, and extinction values). We also determined the integrated ring properties, including the average age, total stellar mass, and current star formation rate (SFR). We find that Sb-type galaxies tend to have the highest ring stellar mass fraction with respect to the host galaxy, and this parameter is correlated with the ring’s SFR surface density. The ring SFRs are correlated with their stellar masses, which is reminiscent of the main sequence of star-forming galaxies. There are striking correlations between star-forming properties (i.e., SFR and SFR surface density) and nonaxisymmetric bar parameters, appearing to confirm previous inferences that strongly barred galaxies tend to have lower ring SFRs, although the ring star formation histories turn out to be significantly more complicated. Nuclear rings with higher stellar masses tend to be associated with lower cluster mass fractions, but there is no such relation for the ages of the rings. The two youngest nuclear rings in our sample, NGC 1512 and NGC 4314, which have the most extreme physical properties, represent the young extremity of the nuclear ring age distribution.

Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

Science.gov (United States)

Kapoor, V. J.; Shokrani, M.

1991-01-01

A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

Oxygen isotopes in tree rings record variation in precipitation δ18O and amount effects in the south of Mexico.

Science.gov (United States)

Brienen, Roel J W; Hietz, Peter; Wanek, Wolfgang; Gloor, Manuel

2013-12-01

[1] Natural archives of oxygen isotopes in precipitation may be used to study changes in the hydrological cycle in the tropics, but their interpretation is not straightforward. We studied to which degree tree rings of Mimosa acantholoba from southern Mexico record variation in isotopic composition of precipitation and which climatic processes influence oxygen isotopes in tree rings ( δ 18 O tr ). Interannual variation in δ 18 O tr was highly synchronized between trees and closely related to isotopic composition of rain measured at San Salvador, 710 km to the southwest. Correlations with δ 13 C, growth, or local climate variables (temperature, cloud cover, vapor pressure deficit (VPD)) were relatively low, indicating weak plant physiological influences. Interannual variation in δ 18 O tr correlated negatively with local rainfall amount and intensity. Correlations with the amount of precipitation extended along a 1000 km long stretch of the Pacific Central American coast, probably as a result of organized storm systems uniformly affecting rainfall in the region and its isotope signal; episodic heavy precipitation events, of which some are related to cyclones, deposit strongly 18 O-depleted rain in the region and seem to have affected the δ 18 O tr signal. Large-scale controls on the isotope signature include variation in sea surface temperatures of tropical north Atlantic and Pacific Ocean. In conclusion, we show that δ 18 O tr of M . acantholoba can be used as a proxy for source water δ 18 O and that interannual variation in δ 18 O prec is caused by a regional amount effect. This contrasts with δ 18 O signatures at continental sites where cumulative rainout processes dominate and thus provide a proxy for precipitation integrated over a much larger scale. Our results confirm that processes influencing climate-isotope relations differ between sites located, e.g., in the western Amazon versus coastal Mexico, and that tree ring isotope records can help in

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Science.gov (United States)

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

Timing performances and edge effects of detectors worked from 6-in. silicon slices

International Nuclear Information System (INIS)

Aiello, S.; Anzalone, A.; Cardella, G.; Cavallaro, Sl.; De Filippo, E.; Di Pietro, A.; Femino, S.; Geraci, M.; Giustolisi, F.; Guazzoni, P.; Iacono Manno, M.; Lanzalone, G.; Lanzano, G.; Lo Nigro, S.; Musumarra, A.; Pagano, A.; Papa, M.; Pirrone, S.; Politi, G.; Porto, F.; Rizzo, F.; Sambataro, S.; Sperduto, M.L.; Sutera, C.; Zetta, L.

1997-01-01

Prototypes of new passivated implanted planar silicon detectors, obtained for the first time from 6 in. silicon slices, have been tested. The time and energy resolutions have been studied as a function of the type and energy of the detected particles, in order to test the performances of these detectors for time of flight measurements in the Chimera project. Some problems arising from edge effects observed in double-pad detectors have been solved by using a guard ring. (orig.)

Tunable optical analog to electromagnetically induced transparency in graphene-ring resonators system.

Science.gov (United States)

Wang, Yonghua; Xue, Chenyang; Zhang, Zengxing; Zheng, Hua; Zhang, Wendong; Yan, Shubin

2016-12-12

The analogue of electromagnetically induced transparency in optical ways has shown great potential in optical delay and quantum-information technology due to its flexible design and easy implementation. The chief drawback for these devices is the bad tunability. Here we demonstrate a tunable optical transparency system formed by graphene-silicon microrings which could control the transparent window by electro-optical means. The device consists of cascaded coupled ring resonators and a graphene/graphene capacitor which integrated on one of the rings. By tuning the Fermi level of the graphene sheets, we can modulate the round-trip ring loss so that the transparency window can be dynamically tuned. The results provide a new method for the manipulation and transmission of light in highly integrated optical circuits and quantum information storage devices.

Evaluation of the Performance of O-rings Made with Different Elastomeric Polymers in Simulated Geothermal Environments at 300°C

Energy Technology Data Exchange (ETDEWEB)

Sugama, Toshifumi [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pyatina, Tatiana [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Redline, Erica Marie [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); McElhanon, James R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Blankenship, Douglas A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2014-12-01

This paper aims to evaluate the survival of O-rings made with six different elastomeric polymers, EPDM, type I- and II-FKM, FEPM, FFKM, and FSR, in five different simulated geothermal environments at 300°C. It further defines the relative strengths and weaknesses of the materials in each environment. The environments tested were: 1) non-aerated steam-cooling cycles, 2) aerated steam-cooling cycles, 3) water-based drilling fluid, 4) CO2-rich geo-brine fluid, and, 5) heat-cool water quenching cycles. Following exposure, the extent of oxidation, oxidationinduced degradation, thermal behaviors, micro-defects, permeation depths of ionic species present in environments throughout the O-ring, silicate-related scale-deposition, and changes in mechanical properties were assessed.

Modeling of silicon etching in CF sub 4 /O sub 2 and CF sub 4 /H sub 2 plasmas

Energy Technology Data Exchange (ETDEWEB)

Trachtenberg, I.; Edgar, T.F. (Dept. of Chemical Engineering, Univ. of Texas at Austin, Austin, TX (US)); Venkatesan, S.P. (Morgantown Energy Technology Center, Morgantown, WV (US))

1990-07-01

A one-dimensional radial flow reactor model that includes fairly detailed free radical gas-phase chemistry has been developed for the etching of silicon in CF{sub 4}/O{sub 2} and CF{sub 4}/H{sub 2} plasmas. Attention has been restricted to transport and reaction of neutral species. The model equations were solved by orthogonal collocation. The sensitivities of the model predictions to flow rate, inlet gas composition, electron density, silicon loading, and other factors have been examined. The major loss path for fluorine atoms is different in CF{sub 4}/O{sub 2} and CF{sub 4}/H{sub 2} systems, and this results in significant qualitative differences in the parametric sensitivities of the two systems.

Implante de tubo de silicone com e sem colágeno na regeneração de nervos em eqüinos Implant of silicone tube with or without collagen in nerve regeneration of horses

Directory of Open Access Journals (Sweden)

Nádia Delistoianov

2008-09-01

Full Text Available A reconstituição cirúrgica de nervos em humanos, em cães e em diversos animais de laboratório é bastante utilizada e tem indicações clínicas e experimentais importantes. No entanto, em eqüinos há poucas informações sobre esta prática. Há relatos sobre a excessiva proliferação de tecido conjuntivo e a formação de neuromas à neurorrafia experimental, mesmo quando se utilizam tubos de silicone para condução do crescimento axonal. O presente estudo teve o objetivo de acrescentar informações sobre o processo de reparação de nervos periféricos em eqüinos por meio de implante de tubo de silicone preenchido ou não com colágeno. Para tanto, foram utilizados oito eqüinos, alocados em dois grupos: GI-13 semanas e GII-26 semanas de observação. Foi realizada secção dos nervos ulnares (NUs e dos ramos cutâneos laterais dos 17° nervos torácicos (NTs, bilateralmente, seguindo tubulização, realizada em cada animal, alternando-se tubos de silicone vazios (TS, em um dos antímeros, ou preenchidos com solução de colágeno (TSC, no contralateral, deixando-se um espaço de 5mm entre os cotos. Nenhuma alteração foi encontrada ao exame do aparelho locomotor e as primeiras reações positivas ao teste de sensibilidade cutânea nos NUs e NTs com TS e TSC foram observadas a partir da 9ª semana, em ambos os grupos. Ao final do período de observação, verificou-se, macroscopicamente, que os nervos encontravam-se envolvidos por tecido conjuntivo e o interior da câmara estava preenchido por tecido de coloração esbranquiçada, de forma cilíndrica, interligando os cotos proximal e distal. Microscopicamente, constatou-se a presença de axônios mielinizados interligando os cotos, as células de Schwann e o processo de remielinização do coto distal, principalmente no TSC. Em ambos os grupos, não houve formação de neuromas e o processo inflamatório limitou-se às áreas perineurais. Concluiu-se que o implante de tubo de

Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

International Nuclear Information System (INIS)

Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

2011-01-01

Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

Thinning of Inner Retinal Layers after Vitrectomy with Silicone Oil versus Gas Endotamponade in Eyes with Macula-Off Retinal Detachment.

Science.gov (United States)

Purtskhvanidze, Konstantine; Hillenkamp, Jost; Tode, Jan; Junge, Olaf; Hedderich, Jürgen; Roider, Johann; Treumer, Felix

2017-01-01

To evaluate retinal layer thickness with optical coherence tomography (OCT) in eyes with macula-off retinal detachment after silicone oil (SiO) or gas endotamponade. Cross-sectional study of 40 eyes with macula-off rhegmatogenous retinal detachment that underwent vitrectomy. 20 eyes received SiO tamponade and 20 matched eyes received gas. 33 healthy fellow eyes served as controls. Macular spectral domain OCT was performed with automated layer detection in the 5 inner subfields of the Early Treatment Diabetic Retinopathy Study (ETDRS) map. Comparing the SiO group with the gas group, the ganglion cell layer showed a significant thinning in all fields of the inner ring of the ETDRS map, the inner plexiform layer in the nasal, superior and temporal quadrants, and the outer plexiform layer in the nasal quadrant. Inner retinal layers in the fovea/parafovea were significantly thinner in the SiO group. Prospective studies are warranted to further elucidate possible retinal adverse effects of SiO tamponade. © 2017 S. Karger AG, Basel.

An All-Silicon Passive Optical Diode

OpenAIRE

Fan, Li; Wang, Jian; Varghese, Leo T.; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M.; Qi, Minghao

2011-01-01

A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input pow...

Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

International Nuclear Information System (INIS)

Neamen, D.; Shedd, W.; Buchanan, B.

1975-01-01

The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 10 7 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si 3 N 4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si 3 N 4 are compared to results on similar devices with SiO 2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

Study of Mn dissolution from LiMn{sub 2}O{sub 4} spinel electrodes using rotating ring-disk collection experiments

Energy Technology Data Exchange (ETDEWEB)

Wang, Li-Fang; Ou, Chin-Ching; Striebel, Kathryn A.; Chen, Jenn-Shing

2003-07-01

The goal of this research was to measure Mn dissolution from a thin porous spinel LiMn{sub 2}O{sub 4} electrode by rotating ring-disk collection experiments. The amount of Mn dissolution from the spinel LiMn{sub 2}O{sub 4} electrode under various conditions was detected by potential step chronoamperometry. The concentration of dissolved Mn was found to increase with increasing cycle numbers and elevated temperature. The dissolved Mn was not dependent on disk rotation speed, which indicated that the Mn dissolution from the disk was under reaction control. The in situ monitoring of Mn dissolution from the spinel was carried out under various conditions. The ring currents exhibited maxima corresponding to the end-of-charge (EOC) and end-of-discharge (EOD), with the largest peak at EOC. The results suggest that the dissolution of Mn from spinel LiMn{sub 2}O{sub 4} occurs during charge/discharge cycling, especially in a charged state (at >4.1 V) and in a discharged state (at <3.1 V). The largest peak at EOC demonstrated that Mn dissolution took place mainly at the top of charge. At elevated temperatures, the ring cathodic currents were larger due to the increase of Mn dissolution rate.

XPS studies of SiO2 surface layers formed by oxygen ion implantation into silicon

International Nuclear Information System (INIS)

Schulze, D.; Finster, J.

1983-01-01

SiO 2 surface layers of 160 nm thickness formed by 16 O + ion implantation into silicon are examined by X-ray photoelectron spectroscopy measurements into the depth after a step-by-step chemical etching. The chemical nature and the thickness of the transition layer were determined. The results of the XPS measurements show that the outer surface and the bulk of the layers formed by oxygen implantation and subsequent high temperature annealing consist of SiO 2 . There is no evidence for Si or SiO/sub x/ (0 2 and Si is similar to that of thin grown oxide layers. Only its thickness is somewhat larger than in thermal oxide

Estudo comparativo das reações teciduais à implantação de silicone e politetrafluoroetileno no dorso de ratos

Directory of Open Access Journals (Sweden)

Kafejian Andréa Paula

1997-01-01

Full Text Available A importância das biopróteses na medicina abrange diversas áreas cirúrgicas. Com o objetivo de comparar a reação tecidual do implante de silicone, um dos mais utilizados, com o implante de politetrafluoroetileno expandido (PTFE-E, de uso mais recente, nos propusemos a realizar este estudo. Foram utilizados trinta ratos (Rattus norvegicus albinus machos, distribuídos em três grupos iguais, com implantes de fragmentos discóides dos materiais citados, no dorso de cada rato. Os grupos diferiram entre si quanto ao período de eutanásia: três, sete e trinta dias. Com base no modelo experimental e utilizando metodologia morfométrica, do ponto de vista histológico não houve reação inflamatória aguda importante que se pudesse correlacionar aos materiais de implantes. A proliferação vascular e a presença de fibrose foram prolongadas em relação à cicatrização normal. A irregularidade do PTFE-E, provavelmente relaciona-se à maior quantidade de vasos e de fibrose tardia constatada neste material, quando comparado ao implante de silicone.

Nitrogen and silicon fertilization of upland rice Adubação nitrogenada e silicatada do arroz de terras altas

Directory of Open Access Journals (Sweden)

Munir Mauad

2003-12-01

Full Text Available Silicon is not considered an essential element for plant development and growth, but its absorption brings several benefits to some crops, especially rice, by increasing cellular wall thickness, providing mechanical resistance to the penetration of fungi, improving the opening angle of leaves and making them more erect, decreasing self-shading and increasing resistance to lodging, especially under high nitrogen rates. To evaluate the effects of nitrogen and silicon fertilization on vegetative and yield components, plant height, and yield of rice cultivar IAC 202, an experiment was carried out combining three nitrogen rates (5, 75 and 150 mg N kg-1 soil applied as urea, and four silicon rates (0, 200, 400 and 600 mg SiO2 kg-1 soil applied as calcium silicate. Trial was set up in a completely randomized design 3 ´ 4 factorial scheme, (N = 5. Nitrogen fertilization increased the number of stems and panicles per square meter and the total number of spikelets, reflecting on grain productivity. Excessive tillering caused by inadequate nitrogen fertilization reduced the percentage of fertile stalks, spikelet fertility and grain mass. Silicon fertilization reduced the number of blank spikelets per panicles and increased grain mass, but did not affect grain productivity.O silício não é considerado um elemento essencial para o crescimento e desenvolvimento das plantas, entretanto, sua absorção traz inúmeros benefícios, principalmente ao arroz, como aumento da espessura da parede celular, conferindo resistência mecânica a penetração de fungos, melhora o ângulo de abertura das folhas tornando-as mais eretas, diminuindo o auto-sombreamento e aumentando a resistência ao acamamento, especialmente sob altas doses de nitrogênio. O presente trabalho teve por objetivo avaliar os efeitos da adubação nitrogenada e silicatada nos componentes vegetativos, nos componentes da produção, na altura da planta e na produtividade da cultivar de arroz IAC

Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

DEFF Research Database (Denmark)

Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron

2007-01-01

The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class...... in the silicon nanocrystal films is dominated by trapping at the Si/SiO2 interface states, occurring on a 1–100 ps time scale depending on particle size and hydrogen passivation......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...

Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

International Nuclear Information System (INIS)

Díaz-Becerril, T.; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A.; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

2017-01-01

Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta 2 O 5 and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta 2 O 5- SiO 2 -Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si + and Ta + states respectively. Ta 2 O 5 and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta 2 O 5 /Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

CERN Document Server

Tarnavskij, G A; Obrekht, M S

2001-01-01

One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

Role of guard rings in improving the performance of silicon detectors

Indian Academy of Sciences (India)

the microelectronics industry, its material properties and processing techniques ... varied shapes and sizes using standard IC fabrication technology to suit specific ... Figure 1. (a) Fabricated 4 wafer showing strip detector of area 6.3 × 6.3 ... all the experimental conditions the same and the guard ring was biased at ground.

Synthesis of the EF-ring of ciguatoxin 3C based on the [2,3]-Wittig rearrangement and ring-closing olefin metathesis.

Science.gov (United States)

Goto, Akiyoshi; Fujiwara, Kenshu; Kawai, Ayako; Kawai, Hidetoshi; Suzuki, Takanori

2007-12-20

The EF-ring segment of ciguatoxin 3C, a causative toxin of ciguatera fish poisoning, was synthesized in three major steps: 1,4-addition for the C20O-C27 bond connection, chirality transferring anti selective [2,3]-Wittig rearrangement for the construction of the anti-2-hydroxyalkyl ether part, and ring-closing olefin metathesis for the F-ring formation.

Black Silicon formation using dry etching for solar cells applications

International Nuclear Information System (INIS)

Murias, D.; Reyes-Betanzo, C.; Moreno, M.; Torres, A.; Itzmoyotl, A.; Ambrosio, R.; Soriano, M.; Lucas, J.; Cabarrocas, P. Roca i

2012-01-01

A study on the formation of Black Silicon on crystalline silicon surface using SF 6 /O 2 and SF 6 /O 2 /CH 4 based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.

{sup 96}Ru(p,{gamma}){sup 97}Rh measurement at the GSI storage ring

Energy Technology Data Exchange (ETDEWEB)

Zhong, Q; Aumann, T; Boretzky, K; Bosch, F; Braeuning, H; Brandau, C; Ershova, O; Geissel, H; Heil, M; Kelic, A; Kozhuharov, C; Langer, C; Bleis, T Le; Litvinov, Y A [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt, 64291 (Germany); Bishop, S; Dillmann, I [Technische Universitaet Muenchen, 85748 Garching (Germany); Blaum, K [Max-Planck-Institut fuer Kernphysik, 69117 Heidelberg (Germany); Davinson, T [University of Edinburgh, Edinburgh (United Kingdom); Gyuerky, G [Institute of Nuclear Research of the Hungarian Academy of Sciences (Hungary); Kaeppeler, F, E-mail: r.reifarth@gsi.d [Forschungszentrum Karlsruhe, Institut fuer Kernphysik, Karlsruhe (Germany)

2010-01-01

A pioneering experiment was recently performed at the Experimental Storage Ring (ESR) at GSI. Fully stripped ions of {sup 96}Ru were injected into the storage ring and slowed down to a few MeV per nucleon. The {sup 97}Rh ions from the {sup 96}Ru(p,{gamma}) reaction at a newly developed hydrogen jet target were detected with Double Sided Silicon Strip Detectors (DSSSD) mounted inside a pocket. The experiment and the status of the analysis at a beam energy of 11 MeV per nucleon will be presented.

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

NARCIS (Netherlands)

Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

2008-01-01

The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperature

Science.gov (United States)

2014-01-01

In this paper, the moderately and lightly doped porous silicon nanowires (PSiNWs) were fabricated by the ‘one-pot procedure’ metal-assisted chemical etching (MACE) method in the HF/H2O2/AgNO3 system at room temperature. The effects of H2O2 concentration on the nanostructure of silicon nanowires (SiNWs) were investigated. The experimental results indicate that porous structure can be introduced by the addition of H2O2 and the pore structure could be controlled by adjusting the concentration of H2O2. The H2O2 species replaces Ag+ as the oxidant and the Ag nanoparticles work as catalyst during the etching. And the concentration of H2O2 influences the nucleation and motility of Ag particles, which leads to formation of different porous structure within the nanowires. A mechanism based on the lateral etching which is catalyzed by Ag particles under the motivation by H2O2 reduction is proposed to explain the PSiNWs formation. PMID:24910568

Optimisation of spontaneous four-wave mixing in a ring microcavity

Science.gov (United States)

Chuprina, I. N.; An, P. P.; Zubkova, E. G.; Kovalyuk, V. V.; Kalachev, A. A.; Gol'tsman, G. N.

2017-11-01

A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the dispersion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numerical calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: completely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable. Presented at the Russian - British Symposium on Quantum Technologies (Moscow, 20 - 23 March 2017)

Defects and defect generation in oxide layer of ion implanted silicon-silicon dioxide structures

CERN Document Server

Baraban, A P

2002-01-01

One studies mechanism of generation of defects in Si-SiO sub 2 structure oxide layer as a result of implantation of argon ions with 130 keV energy and 10 sup 1 sup 3 - 3.2 x 10 sup 1 sup 7 cm sup - sup 2 doses. Si-SiO sub 2 structures are produced by thermal oxidation of silicon under 950 deg C temperature. Investigations were based on electroluminescence technique and on measuring of high-frequency volt-farad characteristics. Increase of implantation dose was determined to result in spreading of luminosity centres and in its maximum shifting closer to boundary with silicon. Ion implantation was shown, as well, to result in increase of density of surface states at Si-SiO sub 2 interface. One proposed model of defect generation resulting from Ar ion implantation into Si-SiO sub 2

Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

International Nuclear Information System (INIS)

Yin, Lan; Harburg, Daniel V.; Rogers, John A.; Bozler, Carl; Omenetto, Fiorenzo

2015-01-01

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems

Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

Energy Technology Data Exchange (ETDEWEB)

Yin, Lan; Harburg, Daniel V.; Rogers, John A., E-mail: jrogers@illinois.edu [Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S Goodwin Ave., Urbana, Illinois 61801 (United States); Bozler, Carl [Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420 (United States); Omenetto, Fiorenzo [Department of Biomedical Engineering, Department of Physics, Tufts University, 4 Colby St., Medford, Massachusetts 02155 (United States)

2015-01-05

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

Comparison of electrical performances of two n-in-p detectors with different implant type of guard ring by TCAD simulation

Directory of Open Access Journals (Sweden)

Mohammed Mekheldi

Full Text Available This paper presents a preliminary comparative study for two different guard rings structures in the purpose of evaluating their electrical performances. The two structures are based on the n-in-p technology with different implant type of guard rings. I–V characteristics have been simulated using Silvaco/ATLAS software for both structures and compared for various parameters of substrate, guard ring and oxide. Simulation results show that the shape of leakage current is almost the same in all simulations but in terms of breakdown voltage, n-in-p structure with n-type guard rings ensures high voltage stability. Keywords: Breakdown voltage, Guard ring, n-in-p silicon detector, TCAD simulation

Silicon germanium as a novel mask for silicon deep reactive ion etching

KAUST Repository

Serry, Mohamed Y.; Rubin, Andrew; Ibrahem, Mohammed Aziz; Sedky, Sherif M.

2013-01-01

-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6

Mapping the magnetic field generated by a supercurrent in a ring of YBa2Cu3O7−δ

International Nuclear Information System (INIS)

Sulca, P D; Gómez, R W

2017-01-01

We design and construct a device to map the magnetic field generated by a supercurrent in a rectangular cross section ring of YBa 2 Cu 3 O 7−δ . For the measurements of the magnetic field, we develop a Gaussmeter based on a commercial Hall effect sensor coupled to an Arduino microprocessor. Our results show an asymmetric distribution of the magnetic field intensity measured at a certain distance along a plane parallel to the ring surface. The behavior of the magnetic field intensity with distance along the ring axis is closely related to what is expected for a toroid. Using the Biot–Savart law and the measured magnetic field values, the induced supercurrent is determined. (paper)

Long-slit spectrophotometry of the multiple knots of the polar ring galaxy IIZw71

Science.gov (United States)

Pérez-Montero, E.; García-Benito, R.; Díaz, A. I.; Pérez, E.; Kehrig, C.

2009-04-01

Aims: The blue compact dwarf galaxy IIZw71 is catalogued as a probable polar-ring galaxy, and along its long axis it has several very luminous knots showing recent episodes of star formation. Our main aim is to study the physical properties, the stellar content, and the kinematics in the brightest knots of the polar ring. Methods: We carried out long-slit spectroscopic observations of the polar ring in the spectral range 3500-10 000 Å taken with the William Herschel Telescope (WHT). The spectroscopic observations complemented by the available photometry of the galaxy in narrow Hα filters. Results: We measured the rotation curve of the ring, from which we infer a ratio M/LB ≈ 3.9 inside the star-forming ring. We measured the auroral [Oiii] line in the two brightest knots, allowing us to measure oxygen, sulphur, nitrogen, argon, and neon chemical abundances following the direct method. Different empirical calibrators were used to estimate the oxygen abundance in the two faintest knots where the temperature sensitive lines could not be measured. The metallicities obtained are very similar for all the knots, but lower than previously reported in the literature from integrated spectra. The N/O abundance, as derived from the N2O2 parameter (the ratio of the [Nii] and [Oii] intensities), is remarkably constant over the ring, indicating that local polution processes are not conspicuous. Using synthetic stellar populations (SSPs) calculated with the code STARLIGHT, we studied the age distribution of the stellar populations in each knot, finding that in all of them there is a combination of a very young population with less than 10 Myr, responsible for the ionisation of the gas, with other populations older than 100 Myr, probably responsible for the chemical evolution of the knots. The small differences in metallicity and the age distributions among the different knots are indicative of a common chemical evolution, probably related to the process of interaction with the

O electrolyte for bio-application

Science.gov (United States)

Naddaf, M.; Almariri, A.

2014-09-01

Porous silicon (PS) has been prepared in the dark by anodic etching of n+-type (111) silicon substrate in a HF:HCl:C2H5OH:H2O2:H2O electrolyte. The processed PS layer is characterized by means of photoluminescence (PL) spectroscopy, scanning electron microscope (SEM), water contact angle (CA) measurements, Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and micro-Raman scattering. The CA of fresh PS layer is found to be ~142°. On aging at ambient conditions, the CA decreases gently to reach ~133° after 3 month, and then it is stabilized for a prolonged time of aging. The visible PL emission from the PS layer also exhibits a good stability against aging time. The FTIR and XPS measurements and analysis show that the stable aged PS layer has rather SiO2-rich surface. The micro/nanostructure nature of the PS layer is revealed from SEM and micro-Raman results and correlated to CA results. Stable hydrophobic surface of oxidized PS layer is attractive for bio-applications. The efficiency of the produced PS layers as an entrapping template for specific immobilization of IgG2a antibody via physical absorption process is demonstrated.

Turbulent shear flow downstream of a sphere with and without an o-ring located over a plane boundary

Directory of Open Access Journals (Sweden)

Sahin Besir

2012-04-01

Full Text Available Flow-structure interaction of separated shear flow from the sphere and a flat plate was investigated by using dye visualization and the particle image velocimetry technique. Later, a passive control method was applied with 2mm oring located on the sphere surface at 55° from front stagnation point. The experiments were carried out in open water channel for Reynolds number value of Re=5000. Flow characteristics have been examined in terms of the 2-D instantaneous and time-averaged velocity vectors, patterns of vorticity, streamlines, rms of velocity fluctuations and Reynolds stress variations and discussed from the point of flow physics, vortex formation, lengths of large-scale Karman Vortex Streets and Kelvin-Helmholtz vortices depending on the sphere locations over the flat plate. It is demonstrated that the gap flow occurring between the sphere bottom point and the flat plate surface has very high scouring effect until h/d=0.25 and then unsymmetrical flow structure of the wake region keeps up to h/D=1.0 for smooth sphere. For the sphere with o-ring, the wake flow structure becomes symmetrical at smaller gap ratios and reattachment point on the flat plate surface occurs earlier. Moreover, o-ring on the sphere diminishes peak magnitudes of the flow characteristics and thus it is expected that the flow-induced forces will be lessened both on the sphere and flat plate surface. Vortex formation lengths and maximum value occurring points become closer locations to the rear surface of the sphere with o-ring.

Effect of opacifiers and UV absorbers on pigmented maxillofacial silicone elastomer, part 1: color stability after artificial aging.

Science.gov (United States)

Han, Ying; Powers, John M; Kiat-Amnuay, Sudarat

2013-06-01

Much dissatisfaction with the color instability and reduced lifetime of extraoral maxillofacial prostheses due to degradation has been reported. The purpose of this study was to compare the effect of a UV mineral-based light protecting agent (LP) on the color stability of pigmented maxillofacial silicone elastomer MDX-4210/Type A after artificial aging to 2 widely used opacifiers. Forty-five groups were established (n=225 total). Three different types of opacifiers (LP, titanium white dry pigment [TW], or silicone intrinsic white [SW]) were added to silicone MDX-4210/type A at 3 concentrations (5%, 10%, or 15%) and subsequently combined with each of 5 colors (no pigments [control], red, blue, yellow, or mixed pigments). Artists' oil pigment was used with LP and TW, while intrinsic silicone pigment was used to color SW. Before and after an energy exposure of 450 kJ/m(2), CIE L*a*b* values were measured with a spectrophotometer. The CIELAB 50:50% perceptibility (ΔE*=1.1) and acceptability threshold (ΔE*=3.0) were used to interpret color changes (ΔE*). Color differences after aging were subjected to 3-way ANOVA. Means were compared by the Fisher PLSD intervals at α=.05. The ΔE* values of all groups were below the acceptability threshold of ΔE*=3.0, except for the control group of SW at 10%, which showed the greatest color change (ΔE*=3.1). When mixed pigment groups were considered, at 5% concentration, LP showed the smallest color change, followed by SW and TW (P.05); at 15%, LP showed the smallest color change, followed by TW and SW (P<.05). All 3 opacifiers at all concentrations protected pigmented silicone MDX4-4210/Type A from color degradation. The LP group showed the smallest color changes. Copyright © 2013 The Editorial Council of the Journal of Prosthetic Dentistry. Published by Mosby, Inc. All rights reserved.

Phase transition and luminescence properties from vapor etched silicon

International Nuclear Information System (INIS)

Aouida, S.; Saadoun, M.; Ben Saad, K.; Bessais, B.

2006-01-01

In this work, we present a study on the structure and photoluminescence (PL) properties of a non-conventional ammonium hexafluorosilicate (NH 4 ) 2 SiF 6 (white powder) obtained from HNO 3 /HF chemical vapor etching (CVE) of silicon wafers. The CVE method leads either to the formation of luminescent Porous Silicon (PS) or SiO x /Si-containing (NH 4 ) 2 SiF 6 depending on the experimental conditions. At specific conditions (i.e., HNO 3 / HF volume ratio > 1 / 4), the CVE technique can generate instead of PS, a (NH 4 ) 2 SiF 6 phase where SiO x /Si particles are embedded. The (NH 4 ) 2 SiF 6 marketed powder is not luminescent, while that obtained from silicon vapor-etching presents a noticeable intense and stable photoluminescence (PL), which was found to have mainly two shoulders at 1.98 and 2.1 eV. Two processes have been proposed to explain this PL property. First, the visible luminescence around 1.98 eV would come from silicon nanoparticles embedded in the powder, having a distribution size that does not allow SiO x species to influence their own PL. Second, the PL shoulder around 2.1 eV would originate from small silicon nanoparticles trapped in SiO x features, leading to oxide related states that may trap electrons or excitons, depending on the silicon nanoparticle size, wherein radiative recombination occurs. The PL shoulder could become broader at low temperatures suggesting the existence of radiative recombination in SiO x related defects

Production of rare earth-silicon-iron alloys

International Nuclear Information System (INIS)

Mehra, O.K.; Bose, D.K.; Gupta, C.K.

1987-01-01

At Metallurgy Division, BARC, improved procedures for producing rare earth-silicon alloys have been investigated. In these methods, reduction of mixed rare earth oxide by a ferro-silicon and aluminium mixture in combination with CaO-MgO flux/CaO-CaF 2 flux have been tried to prepare an alloy product with a higher rare earth recovery at a higher rare earth content than the present commercial production method. The rare earth recovery using CaO-CaF 2 was 85 per cent while in the case of CaO-MgO flux it was 76 per cent. The corresponding rare earth contents in the alloy correspond to 40 per cent and 55 per cent by weight respectively. (author)

One-step synthesis of lightly doped porous silicon nanowires in HF/AgNO3/H2O2 solution at room temperature

International Nuclear Information System (INIS)

Bai, Fan; Li, Meicheng; Song, Dandan; Yu, Hang; Jiang, Bing; Li, Yingfeng

2012-01-01

One-step synthesis of lightly doped porous silicon nanowire arrays was achieved by etching the silicon wafer in HF/AgNO 3 /H 2 O 2 solution at room temperature. The lightly doped porous silicon nanowires (pNWs) have circular nanopores on the sidewall, which can emit strong green fluorescence. The surface morphologies of these nanowires could be controlled by simply adjusting the concentration of H 2 O 2 , which influences the distribution of silver nanoparticles (Ag NPs) along the nanowire axis. A mechanism based on Ag NPs-induced lateral etching of nanowires was proposed to explain the formation of pNWs. The controllable and widely applicable synthesis of pNWs will open their potential application to nanoscale photoluminescence devices. - Graphical abstract: The one-step synthesis of porous silicon nanowire arrays is achieved by chemical etching of the lightly doped p-type Si (100) wafer at room temperature. These nanowires exhibit strong green photoluminescence. SEM, TEM, HRTEM and photoluminescence images of pNWs. The scale bars of SEM, TEM HRTEM and photoluminescence are 10 μm, 20 nm, 10 nm, and 1 μm, respectively. Highlights: ► Simple one-step synthesis of lightly doped porous silicon nanowire arrays is achieved at RT. ► Etching process and mechanism are illustrated with etching model from a novel standpoint. ► As-prepared porous silicon nanowire emits strong green fluorescence, proving unique property.

Evaluation of substrate noise suppression method to mitigate crosstalk among trough-silicon vias

Science.gov (United States)

Araga, Yuuki; Kikuchi, Katsuya; Aoyagi, Masahiro

2018-04-01

Substrate noise from a single through-silicon via (TSV) and the noise attenuation by a substrate tap and a guard ring are clarified. A CMOS test vehicle is designed, and 6-µm-diameter TSVs are manufactured on a 20-µm-thick silicon substrate by the via-last method. An on-chip waveform-capturing circuitry is embedded in the test vehicle to capture transient waveforms of substrate noise. The embedded waveform-capturing circuitry demonstrates small and local noise propagation. Experimental results show increased substrate noise level induced by TSVs and the effectiveness of the substrate tap and guard ring for mitigating the crosstalk among TSVs. An analytical model to explain substrate noise propagation is developed to validate experimental results. Results obtained using the substrate model with a multilayer mesh shows good consistency with experimental results, indicating that the model can be used for examination of noise suppression methods.

Numerical studies on a plasmonic temperature nanosensor based on a metal-insulator-metal ring resonator structure for optical integrated circuit applications

Science.gov (United States)

Al-mahmod, Md. Jubayer; Hyder, Rakib; Islam, Md Zahurul

2017-07-01

A nanosensor, based on a metal-insulator-metal (MIM) plasmonic ring resonator, is proposed for potential on-chip temperature sensing and its performance is evaluated numerically. The sensor components can be fabricated by using planar processes on a silicon substrate, making its manufacturing compatible to planar electronic fabrication technology. The sensor, constructed using silver as the metal rings and a thermo-optic liquid ethanol film between the metal layers, is capable of sensing temperature with outstanding optical sensitivity, as high as -0.53 nm/°C. The resonance wavelength is found to be highly sensitive to the refractive index of the liquid dielectric film. The resonance peak can be tuned according to the requirement of intended application by changing the radii of the ring resonator geometries in the design phase. The compact size, planar and silicon-based design, and very high resolutions- these characteristics are expected to make this sensor technology a preferred choice for lab-on-a-chip applications, as compared to other contemporary sensors.

Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

Energy Technology Data Exchange (ETDEWEB)

Díaz-Becerril, T., E-mail: tomas.diaz.be@gmail.com; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A., E-mail: acoyopol@gmail.com; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

2017-04-15

Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta{sub 2}O{sub 5} and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta{sub 2}O{sub 5-}SiO{sub 2}-Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si{sup +} and Ta{sup +} states respectively. Ta{sub 2}O{sub 5} and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta{sub 2}O{sub 5}/Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

Athermal silicon optical add-drop multiplexers based on thermo-optic coefficient tuning of sol-gel material.

Science.gov (United States)

Namnabat, Soha; Kim, Kyung-Jo; Jones, Adam; Himmelhuber, Roland; DeRose, Christopher T; Trotter, Douglas C; Starbuck, Andrew L; Pomerene, Andrew; Lentine, Anthony L; Norwood, Robert A

2017-09-04

Silicon photonics has gained interest for its potential to provide higher efficiency, bandwidth and reduced power consumption compared to electrical interconnects in datacenters and high performance computing environments. However, it is well known that silicon photonic devices suffer from temperature fluctuations due to silicon's high thermo-optic coefficient and therefore, temperature control in many applications is required. Here we present an athermal optical add-drop multiplexer fabricated from ring resonators. We used a sol-gel inorganic-organic hybrid material as an alternative to previously used materials such as polymers and titanium dioxide. In this work we studied the thermal curing parameters of the sol-gel and their effect on thermal wavelength shift of the rings. With this method, we were able to demonstrate a thermal shift down to -6.8 pm/°C for transverse electric (TE) polarization in ring resonators with waveguide widths of 325 nm when the sol-gel was cured at 130°C for 10.5 hours. We also achieved thermal shifts below 1 pm/°C for transverse magnetic (TM) polarization in the C band under different curing conditions. Curing time compared to curing temperature shows to be the most important factor to control sol-gel's thermo-optic value in order to obtain an athermal device in a wide temperature range.

Initial Reactivity of Linkages and Monomer Rings in Lignin Pyrolysis Revealed by ReaxFF Molecular Dynamics.

Science.gov (United States)

Zhang, Tingting; Li, Xiaoxia; Guo, Li

2017-10-24

The initial conversion pathways of linkages and their linked monomer units in lignin pyrolysis were investigated comprehensively by ReaxFF MD simulations facilitated by the unique VARxMD for reaction analysis. The simulated molecular model contains 15 920 atoms and was constructed on the basis of Adler's softwood lignin model. The simulations uncover the initial conversion ratio of various linkages and their linked aryl monomers. For linkages and their linked monomer aryl rings of α-O-4, β-O-4 and α-O-4 & β-5, the C α /C β ether bond cracking dominates the initial pathway accounting for at least up to 80% of their consumption. For the linkage of β-β & γ-O-α, both the C α -O ether bond cracking and its linked monomer aryl ring opening are equally important. Ring-opening reactions dominate the initial consumption of other 4-O-5, 5-5, β-1, β-2, and β-5 linkages and their linked monomers. The ether bond cracking of C α -O and C β -O occurs at low temperature, and the aryl ring-opening reactions take place at relatively high temperature. The important intermediates leading to the stable aryl ring opening are the phenoxy radicals, the bridged five-membered and three-membered rings and the bridged six-membered and three-membered rings. In addition, the reactivity of a linkage and its monomer aryl ring may be affected by other linkages. The ether bond cracking of α-O-4 and β-O-4 linkages can activate its neighboring linkage or monomer ring through the formed phenoxy radicals as intermediates. The important intermediates revealed in this article should be of help in deepening the understanding of the controlling mechanism for producing aromatic chemicals from lignin pyrolysis.

Moving-ring field-reversed mirror reactor

International Nuclear Information System (INIS)

Smith, A.C. Jr.; Ashworth, C.P.; Abreu, K.E.

1981-01-01

We describe a first prototype fusion reactor design of the Moving-Ring Field-Reversed Mirror Reactor. The fusion fuel is confined in current-carrying rings of magnetically-field-reversed plasma. The plamsa rings, formed by a coaxial plasma gun, are magnetically compressed to ignition temperature while they are being injected into the reactor's burner section. DT ice pellets refuel the rings during the burn at a rate which maintains constant fusion power. A steady train of plasma rings moves at constant speed through the reactor under the influence of a slightly diverging magnetic field. The aluminum first wall and breeding zone structure minimize induced radioactivity; hands-on maintenance is possible on reactor components outside the breeding blanket. Helium removes the heat from the Li 2 O tritium breeding blanket and is used to generate steam. The reactor produces a constant, net power of 376 MW

Effects of ion implantation on charges in the silicon--silicon dioxide system

International Nuclear Information System (INIS)

Learn, A.J.; Hess, D.W.

1977-01-01

Structures consisting of thermally grown oxide on silicon were implanted with boron, arsenic, or argon ions. For argon implantation through oxides, an increased fixed oxide charge (Q/sub ss/) was observed with the increase being greater for than for silicon. This effect is attributed to oxygen recoil which produces additional excess ionized silicon in the oxide of a type similar to that arising in thermal oxidation. Fast surface state (N/sub st/) generation was also noted which in most cases obscured the Q/sub ss/ increase. Of various heat treatments tested, only a 900 degreeC anneal in hydrogen annihilated N/sub st/ and allowed Q/sub ss/ measurement. Such N/sub st/ apparently arises as a consequence of implantation damage at the silicon--silicon dioxide interface. With the exception of boron implantations into thick oxides or through aluminum electrodes, reduction of the mobile ionic charge (Q/sub o/) was achieved by implantation. The reduction again is presumably damage related and is not negated by high-temperature annealing but may be counterbalanced by aluminum incorporation in the oxide

Microscopic study of the H.sub.2./sub.O vapor treatment of the silicon grain boundaries

Czech Academy of Sciences Publication Activity Database

Honda, Shinya; Mates, Tomáš; Rezek, Bohuslav; Fejfar, Antonín; Kočka, Jan

2008-01-01

Roč. 354, č. 19-25 (2008), s. 2310-2313 ISSN 0022-3093 R&D Projects: GA MŽP(CZ) SN/3/172/05 Keywords : polycrystalline silicon films * H 2 O vapor treatment * potential * crystalline disorder * stress * defects * passivation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.449, year: 2008

XPS studies of SiO/sub 2/ surface layers formed by oxygen ion implantation into silicon

Energy Technology Data Exchange (ETDEWEB)

Schulze, D.; Finster, J. (Karl-Marx-Universitaet, Leipzig (German Democratic Republic). Sektion Chemie); Hensel, E.; Skorupa, W.; Kreissig, U. (Zentralinstitut fuer Kernforschung, Rossendorf bei Dresden (German Democratic Republic))

1983-03-16

SiO/sub 2/ surface layers of 160 nm thickness formed by /sup 16/O/sup +/ ion implantation into silicon are examined by X-ray photoelectron spectroscopy measurements into the depth after a step-by-step chemical etching. The chemical nature and the thickness of the transition layer were determined. The results of the XPS measurements show that the outer surface and the bulk of the layers formed by oxygen implantation and subsequent high temperature annealing consist of SiO/sub 2/. There is no evidence for Si or SiO/sub x/ (0O/sub x/ transition region between SiO/sub 2/ and Si is similar to that of thin grown oxide layers. Only its thickness is somewhat larger than in thermal oxide.

UV curing silicon-containing epoxy resin and its glass cloth reinforced composites

International Nuclear Information System (INIS)

Yang Guang; Tang Zhuo; Huang Pengcheng

2007-01-01

A UV-curable cationic silicon-containing epoxy resin formulation was developed. The gel conversion of the cured resin after 10-min UV irradiation reached 80% in the presence of 5% diaryliodonium salt photoinitiator and 5.5% polyol chain transfer agent by cationic ring-opening polymerization. The glass cloth-reinforced composites were fabricated with the silicon-containing epoxy resin using the wet lay-up technique and UV irradiation. The mechanical properties of the composites were evaluated. Compared with glass cloth reinforced bisphenol A epoxy resin matrix composites, the silicon-containing epoxy resin matrix composites possessed higher tensile strength and interlayer shear strength which was 158.5MPa and 9.9MPa respectively while other mechanical properties such as flexural property and tensile modulus were similar. (authors)

Surface passivation and carrier selectivity of the thermal-atomic-layer-deposited TiO₂ on crystalline silicon

DEFF Research Database (Denmark)

Plakhotnyuk, Maksym; Schüler, Nadine; Shkondin, Evgeniy

2017-01-01

Here, we demonstrate the use of an ultrathin TiO2 film as a passivating carrier-selective contact for silicon photovoltaics. The effective lifetime, surface recombination velocity, and diode quality dependence on TiO2 deposition temperature with and without a thin tunneling oxide interlayer (SiO2...... heterojunction with optimized photovoltage, interface quality, and electron extraction to maximize the photovoltage of TiO2–Si heterojunction photovoltaic cells are formulated. Diode behaviour was analysed with the help of experimental, analytical, and simulation methods. It is predicted that TiO2 with a high...

Athermal Photonic Devices and Circuits on a Silicon Platform

Science.gov (United States)

Raghunathan, Vivek

In recent years, silicon based optical interconnects has been pursued as an effective solution that can offer cost, energy, distance and bandwidth density improvements over copper. Monolithic integration of optics and electronics has been enabled by silicon photonic devices that can be fabricated using CMOS technology. However, high levels of device integration result in significant local and global temperature fluctuations that prove problematic for silicon based photonic devices. In particular, high temperature dependence of Si refractive index (thermo-optic (TO) coefficient) shifts the filter response of resonant devices that limit wavelength resolution in various applications. Active thermal compensation using heaters and thermo-electric coolers are the legacy solution for low density integration. However, the required electrical power, device foot print and number of input/output (I/O) lines limit the integration density. We present a passive approach to an athermal design that involves compensation of positive TO effects from a silicon core by negative TO effects of the polymer cladding. In addition, the design rule involves engineering the waveguide core geometry depending on the resonance wavelength under consideration to ensure desired amount of light in the polymer. We develop exact design requirements for a TO peak stability of 0 pm/K and present prototype performance of 0.5 pm/K. We explore the material design space through initiated chemical vapor deposition (iCVD) of 2 polymer cladding choices. We study the effect of cross-linking on the optical properties of a polymer and establish the superior performance of the co-polymer cladding compared to the homo-polymer. Integration of polymer clad devices in an electronic-photonic architecture requires the possibility of multi-layer stacking capability. We use a low temperature, high density plasma chemical vapor deposition of SiO2/SiN x to hermetically seal the athermal. Further, we employ visible light for

Compositional analysis of silicon oxide/silicon nitride thin films

Directory of Open Access Journals (Sweden)

Meziani Samir

2016-06-01

Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

Functionalization of 2D macroporous silicon under the high-pressure oxidation

Science.gov (United States)

Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

2018-03-01

Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

Towards scalable binderless electrodes: carbon coated silicon nanofiber paper via Mg reduction of electrospun SiO2 nanofibers.

Science.gov (United States)

Favors, Zachary; Bay, Hamed Hosseini; Mutlu, Zafer; Ahmed, Kazi; Ionescu, Robert; Ye, Rachel; Ozkan, Mihrimah; Ozkan, Cengiz S

2015-02-06

The need for more energy dense and scalable Li-ion battery electrodes has become increasingly pressing with the ushering in of more powerful portable electronics and electric vehicles (EVs) requiring substantially longer range capabilities. Herein, we report on the first synthesis of nano-silicon paper electrodes synthesized via magnesiothermic reduction of electrospun SiO2 nanofiber paper produced by an in situ acid catalyzed polymerization of tetraethyl orthosilicate (TEOS) in-flight. Free-standing carbon-coated Si nanofiber binderless electrodes produce a capacity of 802 mAh g(-1) after 659 cycles with a Coulombic efficiency of 99.9%, which outperforms conventionally used slurry-prepared graphite anodes by over two times on an active material basis. Silicon nanofiber paper anodes offer a completely binder-free and Cu current collector-free approach to electrode fabrication with a silicon weight percent in excess of 80%. The absence of conductive powder additives, metallic current collectors, and polymer binders in addition to the high weight percent silicon all contribute to significantly increasing capacity at the cell level.

Study of temperature-dependent charge conduction in silicon-nanocrystal/SiO_2 multilayers

International Nuclear Information System (INIS)

Mavilla, Narasimha Rao; Chavan, Vinayak; Solanki, Chetan Singh; Vasi, Juzer

2016-01-01

Silicon-nanocrystals (Si-NCs) realized by SiO_x _ 8 MV/cm; independent of temperature), while for lower electric fields (5–8 MV/cm) at higher temperatures, the trap-related Generalized Poole–Frenkel (GPF) is dominant. This signified the role of traps in modifying the conduction in bulk ICPCVD SiO_2 films. We then present the conduction in ML samples. For multilayer samples with SiO_2 sublayer thickness of 1.5 nm and 2.5 nm, Direct Tunneling (DT) is observed to be dominant, while for SiO_2 sublayer thickness of 3.5 nm, Space Charge Limited Conduction (SCLC) with exponential trap distribution is found to be the dominant conduction mechanism. This signifies the role of traps in modifying the conduction in Si-NC multilayer samples and SiO_2 sublayer thickness dependence. - Highlights: • Electrical conduction in SiO_2 film & Si-nanocrystal layers (Si-NCs) is reported. • SiO_2/SiO_x multilayer based Si-NCs were realized by Inductively Coupled plasma CVD. • For SiO_2 film, Fowler–Nordheim tunneling & Generalized Poole–Frenkel are observed. • For Si-NCs with thin SiO_2 sublayers (< 2.5 nm) Direct Tunneling is dominant. • For Si-NCs with 3.5 nm SiO_2 sublayers Space Charge Limited Conduction is dominant.

Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Owen, Jorj Ian

2011-07-01

Aluminum-doped zinc oxide (ZnO:Al) can fulfill many requirements in thin-film solar cells, acting as (1) a transparent contact through which the incident light is transmitted, (2) part of the back reflector, and (3) a source of light scattering. Magnetron sputtered ZnO:Al thin-films are highly transparent, conductive, and are typically texturized by post-deposition etching in a dilute hydrochloric acid (HCl) solution to achieve light scattering. The ZnO:Al thin-film electronic and optical properties, as well as the surface texture after etching, depend on the deposition conditions and the post-deposition treatments. Despite having been used in thin-film solar cells for more than a decade, many aspects regarding the growth, effects of heat treatments, environmental stability, and etching of sputtered ZnO:Al are not fully understood. This work endeavors to further the understanding of ZnO:Al for the purpose improving silicon thin-film solar cell efficiency and reducing ZnO:Al production costs. With regard to the growth of ZnO:Al, the influence of various deposition conditions on the resultant electrical and structural properties and their evolution with film thickness were studied. The surface electrical properties extracted from a multilayer model show that while carrier concentration of the surface layer saturates already at film thickness of 100 nm, the surface mobility continues to increases with film thickness, and it is concluded that electronic transport across grain boundaries limits mobility in ZnO:Al thin films. ZnO:Al deposited onto a previously etched ZnO:Al surface grows epitaxially, preserving both the original orientation and grain structure. Further, it is determined that a typical ZnO:Al used in thin-film silicon solar cells grows Zn-terminated on glass substrates. Concerning the affects of heat treatments and stability, it is demonstrated that a layer of amorphous silicon can protect ZnO:Al from degradation during annealing, and the mobility of ZnO

Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO_2/Si structure

International Nuclear Information System (INIS)

Vexler, M. I.; Grekhov, I. V.

2016-01-01

The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO_2(ZrO_2)/SiO_2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO_2(ZrO_2)/SiO_2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO_2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

Terfenol-D/Pb(Zr,Ti)O{sub 3} disk-ring multiferroic heterostructures coupled through normal stresses

Energy Technology Data Exchange (ETDEWEB)

Li, Lei; Chen, Xiang Ming [Zhejiang University, Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Hangzhou (China)

2010-03-15

Disk-ring multiferroic heterostructures composed of Terfenol-D and Pb(Zr,Ti)O{sub 3} (PZT) were prepared and characterized, for which the ferromagnetic and ferroelectric phases were coupled through normal stresses instead of the shear stresses that acted in most of the previous multiferroic heterostructures. High low-frequency magnetoelectric coefficients of 0.10-0.75 V cm{sup -1} Oe{sup -1} were attained for the disk-ring heterostructures, which indicated the strong magnetoelectric coupling. Moreover, a symmetrical resonant peak was observed for dE{sub 3}/dH{sub 3} in the frequency range of 1-200 kHz, while another weak peak with asymmetrical shape also existed at a lower frequency for dE{sub 3}/dH{sub 1}, which was due to the combination of two vibration modes. (orig.)

Charge Losses in Silicon Sensors and Electric-Field Studies at the Si-SiO$_2$ Interface

CERN Document Server

Poehlsen, Thomas

Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs ($eh$ pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of different wavelengths. Light of 1063 nm, 830 nm and 660 nm wavelength is used to generate $eh$ pairs along the whole sensor depth, a few $\\mu$m below the surface and very close to the surface, respectively. Segmented p$^+$n silicon strip sensors are used to study the electric field below the SiO$_2$ separating the strip implants. The sensors are investigated before and after irradiation with 12 keV x-rays to a dose of 1 MGy. It is found that the electric field close to the Si-SiO$_2$ interface depends on both the irradiation dose and the biasing history. For the non-irradiated sensors the observed dependence of the electric field on biasing history and humidity is qualitatively as expected from simulations of the...

The Age of Saturn's Rings Constrained by the Meteoroid Flux Into the System

Science.gov (United States)

Kempf, S.; Altobelli, N.; Srama, R.; Cuzzi, J. N.; Estrada, P. R.

2017-12-01

The origin of Saturn's ring is still not known. There is an ongoing argument whether Saturn's ring are rather young or have been formed shortly after Saturn together with its satellites. The water-ice rings contain about 5% rocky material resulting from continuous meteoroid bombardment of the ring material with interplanetary micrometeoroids. Knowledge of the incoming mass flux would allow to estimate the ring's exposure time. Model calculations suggest exposure times of 108 years implying a late ring formation. This scenario is problematic because the tidal disruption of a Mimas-sized moon or of a comet within the planet's Roche zone would lead to a much larger rock content as observed today. Here we report on the measurement of the meteoroid mass flux into the Saturnian system obtained by the charge-sensitive entrance grid system (QP) of the Cosmic Dust Analyser (CDA) on the Cassini spacecraft. Interplanetary dust particles (IDPs) entering Saturn's sphere of gravitational influence are identified through the measurements of their speed vectors. We analyzed the full CDA data set acquired after Cassini's arrival at Saturn in 2004, identified the impact speed vectors of 128 extrinsic micrometeoroids ≥ 2 μm, and determined their orbital elements. On the basis of these measurements we determined the mass flux into the Saturnian system. Our preliminary findings are in support of an old ring. The knowledge of the meteoroids orbital elements allows us for the first time to characterize the meteoroid environment in the outer solar system based on direct measurements.

Mechanochemical approaches to employ silicon as a lithium-ion battery anode

International Nuclear Information System (INIS)

Shimoi, Norihiro; Bahena-Garrido, Sharon; Tanaka, Yasumitsu; Qiwu, Zhang

2015-01-01

Silicon is essential as an active material in lithium-ion batteries because it provides both high-charge and optimal cycle characteristics. The authors attempted to realize a composite by a simple mechanochemical grinding approach of individual silicon (Si) particles and copper monoxide (CuO) particles to serve as an active material in the anode and optimize the charge-discharge characteristics of a lithium-ion battery. The composite with Si and CuO allowed for a homogenous dispersion with nano-scale Si grains, nano-scale copper-silicon alloy grains and silicon monoxide oxidized the oxide from CuO. The authors successfully achieved the synthesis of an active composite unites the structural features of an active material based on silicon composite as an anode in Li-ion battery with high capacity and cyclic reversible charge properties of 3256 mAh g −1 after 200 cycles

Histological study on acute inflammatory reaction to polyurethane-coated silicone implants in rats Estudo histológico da reação inflamatória aguda ao implante de silicone revestido com poliuretano em ratos

Directory of Open Access Journals (Sweden)

Paulo Roberto da Silva Mendes

2008-02-01

Full Text Available PURPOSE: Evaluating histologically the silicone peri-implant coated by polyurethane inflammation associated to the use of anti-microbial and bacterial contamination. METHODS: It was used 35 Wistar rats. The animals were divided in seven groups: I - Control; II - implant cavity contamination with10 bacteria/ml; III - implant cavity contamination with 10 bacteria/ml; IV - implant cavity contamination with 10 bacteria/ml; V - identical contamination to group II and implant immersions in anti-microbial solution; VI - identical contamination in group III and implant immersions in the anti-microbial solution; VII - identical contamination of group IV and implant immersions in anti-microbial solution. It was evaluated morphometrically the peri-implant capsules after 30 days of introduction. RESULTS: The factors with more discriminating power were the giants cells of a strange body and the mononuclear. There was no correlation between the bacterial concentrations and the histological alterations. CONCLUSION: 1 The histological standard of the inflammatory reaction around the silicone implant coated with polyurethan is chronic granulomatosis type of a strange body; 2 There isn´t correlation between concentration of Staphylococcus epidermidis and histological changes; 3 The use of anti-microbial solution decreased the mononuclear cell reactions, with the increase of giant cells in a strange body.OBJETIVO: Avaliar, histologicamente, a reação inflamatória aos implantes de silicone revestidos por poliuretano, com contaminação bacteriana, associada ou não ao uso de antimicrobianos. MÉTODOS: Utilizou-se 35 ratos Wistar. Os animais foram divididos em 7 grupos: I- Controle, II- contaminação da cavidade do implante com 10¹ bactérias/ml, III- contaminação da cavidade do implante com 10³ bactérias/ml, IV- contaminação da cavidade do implante com 10(5 bactérias/ml, V- contaminação idêntica ao grupo II e imersão dos implantes em solução

A study of Solar-Enso correlation with southern Brazil tree ring index (1955- 1991)

Science.gov (United States)

Rigozo, N.; Nordemann, D.; Vieira, L.; Echer, E.

The effects of solar activity and El Niño-Southern Oscillation on tree growth in Southern Brazil were studied by correlation analysis. Trees for this study were native Araucaria (Araucaria Angustifolia)from four locations in Rio Grande do Sul State, in Southern Brazil: Canela (29o18`S, 50o51`W, 790 m asl), Nova Petropolis (29o2`S, 51o10`W, 579 m asl), Sao Francisco de Paula (29o25`S, 50o24`W, 930 m asl) and Sao Martinho da Serra (29o30`S, 53o53`W, 484 m asl). From these four sites, an average tree ring Index for this region was derived, for the period 1955-1991. Linear correlations were made on annual and 10 year running averages of this tree ring Index, of sunspot number Rz and SOI. For annual averages, the correlation coefficients were low, and the multiple regression between tree ring and SOI and Rz indicates that 20% of the variance in tree rings was explained by solar activity and ENSO variability. However, when the 10 year running averages correlations were made, the coefficient correlations were much higher. A clear anticorrelation is observed between SOI and Index (r=-0.81) whereas Rz and Index show a positive correlation (r=0.67). The multiple regression of 10 year running averages indicates that 76% of the variance in tree ring INdex was explained by solar activity and ENSO. These results indicate that the effects of solar activity and ENSO on tree rings are better seen on long timescales.

Structural, Optical, and Vibrational Properties of ZnO Microrods Deposited on Silicon Substrate

Science.gov (United States)

Lahlouh, Bashar I.; Ikhmayies, Shadia J.; Juwhari, Hassan K.

2018-03-01

Zinc oxide (ZnO) microrod films deposited by spray pyrolysis on silicon substrate at 350 ± 5°C have been studied and evaluated, and compared with thin films deposited by electron beam to confirm the identity of the studied samples. The films were characterized using different techniques. The microrod structure was studied and confirmed by scanning electron microscopy. Fourier-transform infrared (FTIR) spectroscopy and x-ray diffraction analysis confirmed successful deposition of ZnO thin films with the expected wurtzite structure. Reflectance data showed a substantial drop across the whole studied wavelength range. The photoluminescence (PL) spectra of the studied samples showed a peak at ˜ 360 nm, representing a signature of ZnO. The shift in the PL peak position is due to defects and other species present in the films, as confirmed by FTIR and energy-dispersive x-ray spectroscopy results.

Self-assembled infrared-luminescent Er-Si-O crystallites on silicon

International Nuclear Information System (INIS)

Isshiki, H.; Dood, M.J.A. de; Polman, A.; Kimura, T.

2004-01-01

Optically active and electrically excitable erbium complexes on silicon are made by wet-chemical synthesis. The single-crystalline Er-Si-O compound is formed by coating a Si(100) substrate with an ErCl 3 /ethanol solution, followed by rapid thermal oxidation and annealing. Room-temperature Er-related 1.53 μm photoluminescence is observed with a peak linewidth as small as 4 meV. The complexes can be excited directly into the Er intra-4f states, or indirectly, through photocarriers. Er concentrations as high as 14 at. % are achieved, incorporated in a crystalline lattice with a 0.9 nm periodicity. Thermal quenching at room temperature is only a factor 5, and the lifetime at 1.535 μm is 200 μs

Effects of variation in background mixing ratios of N2, O2, and Ar on the measurement of δ18O–H2O and δ2H–H2O values by cavity ring-down spectroscopy

Directory of Open Access Journals (Sweden)

J. E. Johnson

2017-08-01

Full Text Available Cavity ring-down spectrometers have generally been designed to operate under conditions in which the background gas has a constant composition. However, there are a number of observational and experimental situations of interest in which the background gas has a variable composition. In this study, we examine the effect of background gas composition on a cavity ring-down spectrometer that measures δ18O–H2O and δ2H–H2O values based on the amplitude of water isotopologue absorption features around 7184 cm−1 (L2120-i, Picarro, Inc.. For background mixtures balanced with N2, the apparent δ18O values deviate from true values by −0.50 ± 0.001 ‰ O2 %−1 and −0.57 ± 0.001 ‰ Ar %−1, and apparent δ2H values deviate from true values by 0.26 ± 0.004 ‰ O2 %−1 and 0.42 ± 0.004 ‰ Ar  %−1. The artifacts are the result of broadening, narrowing, and shifting of both the target absorption lines and strong neighboring lines. While the background-induced isotopic artifacts can largely be corrected with simple empirical or semi-mechanistic models, neither type of model is capable of completely correcting the isotopic artifacts to within the inherent instrument precision. The development of strategies for dynamically detecting and accommodating background variation in N2, O2, and/or Ar would facilitate the application of cavity ring-down spectrometers to a new class of observations and experiments.

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

Science.gov (United States)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

Optoelectronic properties of Black-Silicon generated through inductively coupled plasma (ICP) processing for crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Hirsch, Jens, E-mail: J.Hirsch@emw.hs-anhalt.de [Anhalt University of Applied Sciences, Faculty EMW, Bernburger Str. 55, DE-06366 Köthen (Germany); Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Str. 12, DE-06120 Halle (Saale) (Germany); Gaudig, Maria; Bernhard, Norbert [Anhalt University of Applied Sciences, Faculty EMW, Bernburger Str. 55, DE-06366 Köthen (Germany); Lausch, Dominik [Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Str. 12, DE-06120 Halle (Saale) (Germany)

2016-06-30

Highlights: • Fabrication of black silicon through inductively coupled plasma (ICP) processing. • Suppressed formation a self-bias and therefore a reduced ion bombardment of the silicon sample. • Reduction of the average hemispherical reflection between 300 and 1120 nm up to 8% within 5 min ICP process time. • Reflection is almost independent of the angle of incidence up to 60°. • 2.5 ms effective lifetime at 10{sup 15} cm{sup −3} MCD after ALD Al{sub 2}O{sub 3} surface passivation. - Abstract: The optoelectronic properties of maskless inductively coupled plasma (ICP) generated black silicon through SF{sub 6} and O{sub 2} are analyzed by using reflection measurements, scanning electron microscopy (SEM) and quasi steady state photoconductivity (QSSPC). The results are discussed and compared to capacitively coupled plasma (CCP) and industrial standard wet chemical textures. The ICP process forms parabolic like surface structures in a scale of 500 nm. This surface structure reduces the average hemispherical reflection between 300 and 1120 nm up to 8%. Additionally, the ICP texture shows a weak increase of the hemispherical reflection under tilted angles of incidence up to 60°. Furthermore, we report that the ICP process is independent of the crystal orientation and the surface roughness. This allows the texturing of monocrystalline, multicrystalline and kerf-less wafers using the same parameter set. The ICP generation of black silicon does not apply a self-bias on the silicon sample. Therefore, the silicon sample is exposed to a reduced ion bombardment, which reduces the plasma induced surface damage. This leads to an enhancement of the effective charge carrier lifetime up to 2.5 ms at 10{sup 15} cm{sup −3} minority carrier density (MCD) after an atomic layer deposition (ALD) with Al{sub 2}O{sub 3}. Since excellent etch results were obtained already after 4 min process time, we conclude that the ICP generation of black silicon is a promising technique

Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors

International Nuclear Information System (INIS)

Guang-Guo, Wu; Hong-Ri, Li; Kun, Liang; Ru, Yang; De-Jun, Han; Xue-Lei, Cao; Huan-Yu, Wang; Jun-Ming, An; Xiong-Wei, Hu

2009-01-01

Anode Boating voltage is predicted and investigated for silicon drift detectors (SDDs) with an active area of 5 mm 2 fabricated by a double-side parallel technology. It is demonstrated that the anode Boating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode Boating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (−50 V) of the SDD. Theoretical analysis and experimental results show that the anode Boating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p + inner ring and the n + anode. A fast checking method before detector encapsulation is proposed by employing the anode Boating voltage along with checking the leakage current, potential distribution and drift properties

Internal stress distribution of X-ring using photoelastic experimental hybrid method

Energy Technology Data Exchange (ETDEWEB)

Bernard, Alunda Ouma [Dedan Kimathi University of Technology, Nyeri (Kenya); Hawong, Jai Sug; Lim, Hyun Seok [Yeungnam University, Gyeongsan (Korea, Republic of); Shin, Dong Chul [Koje College, Geoje (Korea, Republic of)

2014-05-15

Sealing elements are essential parts of many machines, and are used to prevent the loss of a fluid or gas. When such fluids are not properly sealed, catastrophic failures may result. Many different types of rings have been developed to suit various industrial needs. Considerable research has been done on the O-ring. We analyze the internal stresses developed in an X-ring under a uniform squeeze rate of 20%, which is suitable for static applications, using a photoelastic experimental hybrid method. The internal pressures applied were 0.98, 1.96, 2.94, 3.92, 4.90, and 5.88 MPa. We show that sealing rings with X geometry have considerably higher internal stresses than O-ring seals. In addition, we demonstrate that after extrusion, for an internal pressure of 5.88 MPa, the two lobes on the upper contact surface merge, thereby increasing the contact length of the upper side significantly. Extrusion in the X-ring occurred when the internal pressure was 4.90 MPa.

Frequency-agile terahertz-wave parametric oscillator in a ring-cavity configuration.

Science.gov (United States)

Minamide, Hiroaki; Ikari, Tomofumi; Ito, Hiromasa

2009-12-01

We demonstrate a frequency-agile terahertz wave parametric oscillator (TPO) in a ring-cavity configuration (ring-TPO). The TPO consists of three mirrors and a MgO:LiNbO(3) crystal under noncollinear phase-matching conditions. A novel, fast frequency-tuning method was realized by controlling a mirror of the three-mirror ring cavity. The wide tuning range between 0.93 and 2.7 THz was accomplished. For first demonstration using the ring-TPO, terahertz spectroscopy was performed as the verification of the frequency-agile performance, measuring the transmission spectrum of the monosaccharide glucose. The spectrum was obtained within about 8 s in good comparison to those of Fourier transform infrared spectrometer.

Fabrication and characterization of Zn O:Zn(n{sup +})/porous-silicon/Si(p) heterojunctions for white light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Vasquez A, M. A. [INAOE, Department of Electronics, 72840 Puebla, Pue. (Mexico); Romero P, G.; Pena S, R. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Ingenieria Electrica, SEES, Av. Intituto Politecnico Nacional No. 2508, Col. San Pedro Zacatenco, 07360 Ciudad de Mexico (Mexico); Andraca A, J. A. [IPN, Centro de Nanociencias y Micro y Nanotecnologias, Av. Luis Enrique Erro s/n, Col. San Pedro Zacatenco, 07738 Ciudad de Mexico (Mexico)

2016-11-01

The fabrication and characterization of electro luminescent Zn O:Zn(n{sup +})/porous silicon/Si(p) heterojunctions is presented. Highly conductive Zn O films (Zn O:Zn(n{sup +})) were produced by applying a temperature annealing at 400 degrees Celsius by 5 min to the Zn O/Zn/Zn O arrange formed by DC sputtering, and the porous silicon (PS) films were prepared on p-type (100) Si wafers by anodic etching. The Zn O: Zn(n{sup +})/PS/Si(p) heterojunction is accomplished by applying a brief temperature annealing stage to the entire Zn O/Zn/Zn O/PS/Si structure to preserve the PS luminescent characteristics. The Zn O:Zn(n{sup +}) films were characterized by X-ray diffraction and Hall-van der Pauw measurements. The PS and Zn O:Zn(n{sup +}) films were also studied by photoluminescence (Pl) measurements. The current-voltage characteristics of the heterojunctions showed well defined rectifying behavior with a turn-on voltage of 1.5 V and ideality factor of 5.4. The high ideality factor is explained by the presence of electron tunneling transport aided by energy levels related to the defects at the heterojunction interface and into the PS film. The saturation current and the series resistance of the heterostructure were 4 x 10{sup -7} A/cm{sup 2} and 16 Ω-cm{sup 2}, respectively. White color electroluminescence is easily observed at the naked eye when excited with square wave pulses of 8 V and 1 Khz. (Author)

Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

International Nuclear Information System (INIS)

Matsumoto, Y.; Godavarthi, S.; Ortega, M.; Sanchez, V.; Velumani, S.; Mallick, P.S.

2011-01-01

Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO x :H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 o C.

Development of high-performance sintered friction material for synchronizer ring; Koseino shoketsu synchronizer ring masatsu zairyo no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

Miyajima, K; Fuwa, Y; Okajima, H; Yoshikawa, K [Toyota Motor Corp., Aichi (Japan); Nakamura, M [Japan Powder Metallurgy Co. Ltd., Tokyo (Japan)

1997-10-01

Increasing vehicle speed and power, high-performance synchronizer ring of manual transmission is required. We develop double layer sintered synchronizer ring for high performance and cost reduction. The main structure is consisted of ferrous sinter for high strength. In this paper, friction materials of sintered synchronizer ring are studied. We can get the good friction and anti-wear property by means of hard particles (FeTi, ZrO2), solid lubricant (Graphite) and suitable porosity in brass sinter matrix. And we also achieve high joining strength between double layers adding Cu-P material. 6 refs., 13 figs., 2 tabs.

Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

DEFF Research Database (Denmark)

Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

2017-01-01

Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement...

Direct bonding of ALD Al₂O₃ to silicon nitride thin films

DEFF Research Database (Denmark)

Laganà, Simone; Mikkelsen, E. K.; Marie, Rodolphe

2017-01-01

microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up......O3 can be bonded to. Preliminary tests demonstrating a well-defined nanochannel system with-100 nm high channels successfully bonded and tests against leaks using optical fluorescence technique and transmission electron microscopy (TEM) characterization of liquid samples are also reported. Moreover...

Participation of oxygen and carbon in formation of oxidation-induced stacking faults in monocrystalline silicon

Directory of Open Access Journals (Sweden)

Иван Федорович Червоный

2015-11-01

Full Text Available It is experimentally established, that density of oxidation-induced stacking faults (OISF in the boron doped monocrystalline silicon plates, that above, than it is more relation of oxygen atoms concentration to carbon atoms concentration in them.On research results of geometry of OISF rings in the different sections of single-crystal geometry of areas is reconstructed with their different closeness. At adjustment of the growing modes of single-crystals of silicon the increase of output of suitable product is observed

Rehabilitation of single finger amputation with customized silicone prosthesis

OpenAIRE

Yadav, Niharika; Chand, Pooran; Jurel, Sunit Kumar

2016-01-01

Finger amputations are common in accidents at home, work, and play. Apart from trauma, congenital disease and deformity also leads to finger amputation. This results in loss of function, loss of sensation as well as loss of body image. Finger prosthesis offers psychological support and social acceptance in such cases. This clinical report describes a method to fabricate ring retained silicone finger prosthesis in a patient with partial finger loss.

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Science.gov (United States)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Silicon photonic resonator for label-free bio-sensing application

Science.gov (United States)

Udomsom, Suruk; Mankong, Ukrit; Theera-Umpon, Nipon; Ittipratheep, Nattapol; Umezawa, Toshimasa; Matsumoto, Atsushi; Yamamoto, Naokatsu

2018-03-01

In medical diagnostics there is an increasing demand for biosensors that can specifically detect biological analytes in a fluid. Especially label-free sensing, consistings of a transducer with biorecognition molecules immobilized on its surface without relying on fluorescent dye. In this paper we study the design and fabrication of a silicon nanowire photonic ring resonator and its feasibility as a biosensor. We have simulated and fabricated racetrack ring resonators which have a few tenths of micrometer gap, up to 0.5 μm between the input / output waveguides and the resonators. It is found that the devices can be designed with large Q factors. Sensitivity to biomaterial detection has been simulated for antibody (goat anti-mouse IgG) - antigen (mouse IgG) using 3-dimensional Finite Difference Time Domain technique. The simulated results show that the ring resonator has a response 15 nm resonance shift per refractive index unit. Antibody coating method is also discussed in this paper which can be applied to other antibody-antigen types.

Design and fabrication of a TiO2/nano-silicon composite visible light photocatalyst

International Nuclear Information System (INIS)

Lin, C.Y.; Fang, Y.K.; Kuo, C.H.; Chen, S.F.; Lin, C.-S.; Chou, T.H.; Lee, Y.-H.; Lin, J.-C.; Hwang, S.-B.

2006-01-01

Nano-silicon (nc-Si) was utilized as the charges generator to promote the photocatalytic and super-hydrophilic reactivity of TiO 2 film under visible light irradiation. The photocatalytic ability of TiO 2 /nc-Si composite photocatalyst was evaluated by a set of experiments to photodecompose 100 ppm methylene blue (MB) in aqueous solution. And the super-hydrophilic property was characterized by measuring the water droplet contacts angle, under visible light irradiation in atmospheric air and at room temperature. Under 100 mW/cm 2 visible light irradiation, the droplet contact angles were reduced to 0 deg. within 4 h with nc-Si charge generator. Additionally, the rate constant of MB photo-degradation was promoted 6.6 times

A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

International Nuclear Information System (INIS)

Hazra, Purnima; Jit, S.

2014-01-01

This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet (UV) wavelength region. In this work, silicon nanowire arrays were prepared on p-type (100)-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide (ZnO) nanowires on a silicon nanowire (SiNW) array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current—voltage and capacitance—voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at ±2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ±2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination (wavelength = 365 nm). The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices. (semiconductor devices)

TN trademark FLEX: a new generation of fluorocarbon o-rings developed by COGEMA logistics with enhanced characteristics at low temperature (-40 C)

International Nuclear Information System (INIS)