WorldWideScience

Sample records for silicone based materials

  1. Silicon based light-emitting materials and devices

    International Nuclear Information System (INIS)

    Chen Weide

    1999-01-01

    Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

  2. Silicon-Based Nanoscale Composite Energetic Materials

    Science.gov (United States)

    2013-02-01

    1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

  3. Plasma deposition of amorphous silicon-based materials

    CERN Document Server

    Bruno, Giovanni; Madan, Arun

    1995-01-01

    Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices.

  4. Characterization of electrical and optical properties of silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Guobin

    2009-12-04

    In this work, the electrical and luminescence properties of a series of silicon based materials used for photovoltaics, microelectronics and nanoelectronics have been investigated by means of electron beam induced current (EBIC), cathodoluminescence (CL), photoluminescence (PL) and electroluminescence (EL) methods. Photovoltaic materials produced by block casting have been investigated by EBIC on wafers sliced from different parts of the ingot. Various solar cell processings have been compared in parallel wafers by means of EBIC collection efficiency measurements and contrast-temperature C(T) behaviors of the extended defects, i. e. dislocations and grain boundaries (GBs). It was found that the solar cell processing with phosphorus diffusion gettering (PDG) followed with a SiN firing greatly reduces the recombination activity of extended defects at room temperature, and improves the bulk property simultaneously. A remaining activity of the dislocations indicates the limitation of the PDG at extended defects. Abnormal behavior of the dislocation activity after certain solar cell processes was also observed in the region with high dislocation density, the dislocations are activated after certain solar cell processings. In order to evaluate the properties of a thin polycrystalline silicon layer prepared by Al-induced layer exchange (Alile) technique, epitaxially layer grown on silicon substrate with different orientations was used as a model system to investigate the impact by the process temperature and the substrates. EBIC energy dependent collection efficiency measurements reveal an improvement of the epilayer quality with increasing substrate temperature during the growth from 450 C to 650 C, and a decrease of epilayer quality at 700 C. PL measurements on the epitaxially grown Si layer on silicon substrates revealed no characteristic dislocation-related luminescence (DRL) lines at room temperature and 77 K, while in the samples prepared by Alile process, intense

  5. Porous silicon based anode material formed using metal reduction

    Science.gov (United States)

    Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

    2015-09-22

    A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

  6. BUILDING MATERIALS AND PRODUCTS BASED ON SILICON MANGANESE SLAGS

    Directory of Open Access Journals (Sweden)

    BOLSHAKOV V. I.

    2016-05-01

    Full Text Available Raising of problem. Currently of particular relevance was given to the matter of introduction in manufacture of building materials and products, resource-saving techniques and technologies; integrated use of raw materials and materials that prevent or significantly reduce their harmful impact on the environment. This allows you to recycle hundreds of thousands of tons of the fiery liquid slags of silicon manganese and to develop effective structural materials that can replace metals, non-metallic building materials of natural origin, concretes, cast stone, plastics and refractories. Purpose. The study of the structure and properties of building materials and products from electric furnace slag of silicon manganese. Conclusion. Slags from the smelting of silicon manganese are classified as acidic. Their lime factor is in the range of 0.47–0.52. The composition of the slag located in the heterogeneous region SiO2 near the line of separation of cristobalite spread to the crystallization of wollastonite, according to the ternary system MnO-CaO-SiO2, which in consideration of their stability, allows the development of technology of building materials (gravel, sand, granulated slag, etc. and products (foundation blocks, road slabs, containers for transportation and storage of hazardous waste, and others.

  7. Soft silicone based interpenetrating networks as materials for actuators

    DEFF Research Database (Denmark)

    Yu, Liyun; Gonzalez, Lidia; Hvilsted, Søren

    2014-01-01

    A new approach based on silicone interpenetrating networks with orthogonal chemistries has been investigated with focus on developing soft and flexible elastomers with high energy densities and small viscous losses. The interpenetrating networks are made as simple two pot mixtures...... as for the commercial available silylation based elastomers such as Elastosil RT625. The resulting interpenetrating networks are formulated to be softer than RT625 to increase the actuation caused when applying a voltage due to their softness combined with the significantly higher permittivity than the pure silicone...

  8. Materials Chemistry and Performance of Silicone-Based Replicating Compounds.

    Energy Technology Data Exchange (ETDEWEB)

    Brumbach, Michael T.; Mirabal, Alex James; Kalan, Michael; Trujillo, Ana B; Hale, Kevin

    2014-11-01

    Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.

  9. SiC-Based Composite Materials Obtained by Siliconizing Carbon Matrices

    Science.gov (United States)

    Shikunov, S. L.; Kurlov, V. N.

    2017-12-01

    We have developed a method for fabrication of parts of complicated configuration from composite materials based on SiC ceramics, which employs the interaction of silicon melt with the carbon matrix having a certain composition and porosity. For elevating the operating temperatures of ceramic components, we have developed a method for depositing protective silicon-carbide coatings that is based on the interaction of the silicon melt and vapor with carbon obtained during thermal splitting of hydrocarbon molecules. The new structural ceramics are characterized by higher operating temperatures; chemical stability; mechanical strength; thermal shock, wear and radiation resistance; and parameters stability.

  10. Mathematical model of silicon smelting process basing on pelletized charge from technogenic raw materials

    Science.gov (United States)

    Nemchinova, N. V.; Tyutrin, A. A.; Salov, V. M.

    2018-03-01

    The silicon production process in the electric arc reduction furnaces (EAF) is studied using pelletized charge as an additive to the standard on the basis of the generated mathematical model. The results obtained due to the model will contribute to the analysis of the charge components behavior during melting with the achievement of optimum final parameters of the silicon production process. The authors proposed using technogenic waste as a raw material for the silicon production in a pelletized form using liquid glass and aluminum production dust from the electrostatic precipitators as a binder. The method of mathematical modeling with the help of the ‘Selector’ software package was used as a basis for the theoretical study. A model was simulated with the imitation of four furnace temperature zones and a crystalline silicon phase (25 °C). The main advantage of the created model is the ability to analyze the behavior of all burden materials (including pelletized charge) in the carbothermic process. The behavior analysis is based on the thermodynamic probability data of the burden materials interactions in the carbothermic process. The model accounts for 17 elements entering the furnace with raw materials, electrodes and air. The silicon melt, obtained by the modeling, contained 91.73 % wt. of the target product. The simulation results showed that in the use of the proposed combined charge, the recovery of silicon reached 69.248 %, which is in good agreement with practical data. The results of the crystalline silicon chemical composition modeling are compared with the real silicon samples of chemical analysis data, which showed the results of convergence. The efficiency of the mathematical modeling methods in the studying of the carbothermal silicon obtaining process with complex interphase transformations and the formation of numerous intermediate compounds using a pelletized charge as an additive to the traditional one is shown.

  11. Silicon Composite Anode Materials for Lithium Ion Batteries Based on Carbon Cryogels and Carbon Paper

    Science.gov (United States)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nanofoams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  12. Carbon Cryogel and Carbon Paper-Based Silicon Composite Anode Materials for Lithium-Ion Batteries

    Science.gov (United States)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 6 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-5 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  13. Silicon oxide based high capacity anode materials for lithium ion batteries

    Science.gov (United States)

    Deng, Haixia; Han, Yongbong; Masarapu, Charan; Anguchamy, Yogesh Kumar; Lopez, Herman A.; Kumar, Sujeet

    2017-03-21

    Silicon oxide based materials, including composites with various electrical conductive compositions, are formulated into desirable anodes. The anodes can be effectively combined into lithium ion batteries with high capacity cathode materials. In some formulations, supplemental lithium can be used to stabilize cycling as well as to reduce effects of first cycle irreversible capacity loss. Batteries are described with surprisingly good cycling properties with good specific capacities with respect to both cathode active weights and anode active weights.

  14. Surface Coating of Gypsum-Based Molds for Maxillofacial Prosthetic Silicone Elastomeric Material: The Surface Topography.

    Science.gov (United States)

    Khalaf, Salah; Ariffin, Zaihan; Husein, Adam; Reza, Fazal

    2015-07-01

    This study aimed to compare the surface roughness of maxillofacial silicone elastomers fabricated in noncoated and coated gypsum materials. This study was also conducted to characterize the silicone elastomer specimens after surfaces were modified. A gypsum mold was coated with clear acrylic spray. The coated mold was then used to produce modified silicone experimental specimens (n = 35). The surface roughness of the modified silicone elastomers was compared with that of the control specimens, which were prepared by conventional flasking methods (n = 35). An atomic force microscope (AFM) was used for surface roughness measurement of silicone elastomer (unmodified and modified), and a scanning electron microscope (SEM) was used to evaluate the topographic conditions of coated and noncoated gypsum and silicone elastomer specimens (unmodified and modified) groups. After the gypsum molds were characterized, the fabricated silicone elastomers molded on noncoated and coated gypsum materials were evaluated further. Energy-dispersive X-ray spectroscopy (EDX) analysis of gypsum materials (noncoated and coated) and silicone elastomer specimens (unmodified and modified) was performed to evaluate the elemental changes after coating was conducted. Independent t test was used to analyze the differences in the surface roughness of unmodified and modified silicone at a significance level of p SEM analysis results showed evident differences in surface smoothness. EDX data further revealed the presence of the desired chemical components on the surface layer of unmodified and modified silicone elastomers. Silicone elastomers with lower surface roughness of maxillofacial prostheses can be obtained simply by coating a gypsum mold. © 2014 by the American College of Prosthodontists.

  15. Energy Conversion Properties of ZnSiP2, a Lattice-Matched Material for Silicon-Based Tandem Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Aaron D.; Warren, Emily L.; Gorai, Prashun; Borup, Kasper A.; Krishna, Lakshmi; Kuciauskas, Darius; Dippo, Patricia C.; Ortiz, Brenden R.; Stradins, Paul; Stevanovic, Vladan; Toberer, Eric S.; Tamboli, Adele C.

    2016-11-21

    ZnSiP2 demonstrates promising potential as an optically active material on silicon. There has been a longstanding need for wide band gap materials that can be integrated with Si for tandem photovoltaics and other optoelectronic applications. ZnSiP2 is an inexpensive, earth abundant, wide band gap material that is stable and lattice matched with silicon. This conference proceeding summarizes our PV-relevant work on bulk single crystal ZnSiP2, highlighting the key findings and laying the ground work for integration into Si-based tandem devices.

  16. Aluminum and silicon based phase change materials for high capacity thermal energy storage

    International Nuclear Information System (INIS)

    Wang, Zhengyun; Wang, Hui; Li, Xiaobo; Wang, Dezhi; Zhang, Qinyong; Chen, Gang; Ren, Zhifeng

    2015-01-01

    Six compositions of aluminum (Al) and silicon (Si) based materials: 87.8Al-12.2Si, 80Al–20Si, 70Al–30Si, 60Al–40Si, 45Al–40Si–15Fe, and 17Al–53Si–30Ni (atomic ratio), were investigated for potentially high thermal energy storage (TES) application from medium to high temperatures (550–1200 °C) through solid–liquid phase change. Thermal properties such as melting point, latent heat, specific heat, thermal diffusivity and thermal conductivity were investigated by differential scanning calorimetry and laser flash apparatus. The results reveal that the thermal storage capacity of the Al–Si materials increases with increasing Si concentration. The melting point and latent heat of 45Al–40Si–15Fe and 17Al–53Si–30Ni are ∼869 °C and ∼562 J g −1 , and ∼1079 °C and ∼960 J g −1 , respectively. The measured thermal conductivity of Al–Si binary materials depend on Si concentration and is higher than 80 W m −1  K −1 from room temperature to 500 °C, which is almost two orders of magnitude higher than those of salts that are commonly used phase change material for thermal energy storage. - Highlights: • Six kinds of materials were investigated for thermal energy storage (550–1200 °C). • Partial melting of Al–Si materials show progressively changing temperatures. • Studied materials can be used in three different working temperature ranges. • Materials are potentially good candidates for thermal energy storage applications.

  17. Recent Progress in Synthesis and Application of Low-Dimensional Silicon Based Anode Material for Lithium Ion Battery

    Directory of Open Access Journals (Sweden)

    Yuandong Sun

    2017-01-01

    Full Text Available Silicon is regarded as the next generation anode material for LIBs with its ultra-high theoretical capacity and abundance. Nevertheless, the severe capacity degradation resulting from the huge volume change and accumulative solid-electrolyte interphase (SEI formation hinders the silicon based anode material for further practical applications. Hence, a variety of methods have been applied to enhance electrochemical performances in terms of the electrochemical stability and rate performance of the silicon anodes such as designing nanostructured Si, combining with carbonaceous material, exploring multifunctional polymer binders, and developing artificial SEI layers. Silicon anodes with low-dimensional structures (0D, 1D, and 2D, compared with bulky silicon anodes, are strongly believed to have several advanced characteristics including larger surface area, fast electron transfer, and shortened lithium diffusion pathway as well as better accommodation with volume changes, which leads to improved electrochemical behaviors. In this review, recent progress of silicon anode synthesis methodologies generating low-dimensional structures for lithium ion batteries (LIBs applications is listed and discussed.

  18. Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

    KAUST Repository

    Bahabry, Rabab R.

    2017-01-01

    . However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption

  19. Silicone-based composite materials simulate breast tissue to be used as ultrasonography training phantoms.

    Science.gov (United States)

    Ustbas, Burcin; Kilic, Deniz; Bozkurt, Ayhan; Aribal, Mustafa Erkin; Akbulut, Ozge

    2018-03-02

    A silicone-based composite breast phantom is fabricated to be used as an education model in ultrasonography training. A matrix of silicone formulations is tracked to mimic the ultrasonography and tactile response of human breast tissue. The performance of two different additives: (i) silicone oil and (ii) vinyl-terminated poly (dimethylsiloxane) (PDMS) are monitored by a home-made acoustic setup. Through the use of 75 wt% vinyl-terminated PDMS in two-component silicone elastomer mixture, a sound velocity of 1.29 ± 0.09 × 10 3  m/s and an attenuation coefficient of 12.99 ± 0.08 dB/cm-values those match closely to the human breast tissue-are measured with 5 MHz probe. This model can also be used for needle biopsy as well as for self-exam trainings. Herein, we highlight the fabrication of a realistic, durable, accessible, and cost-effective training platform that contains skin layer, inner breast tissue, and tumor masses. Copyright © 2018. Published by Elsevier B.V.

  20. Silicon oxynitride based photonics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

  1. Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

    KAUST Repository

    Bahabry, Rabab R.

    2017-11-30

    The solar cells market has an annual growth of more than 30 percent over the past 15 years. At the same time, the cost of the solar modules diminished to meet both of the rapid global demand and the technological improvements. In particular for the crystalline silicon solar cells, the workhorse of this technology. The objective of this doctoral thesis is enhancing the efficiency of c-Si solar cells while exploring the cost reduction via innovative techniques. Contact metallization and ultra-flexible wafer based c-Si solar cells are the main areas under investigation. First, Silicon-based solar cells typically utilize screen printed Silver (Ag) metal contacts which affect the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used for the front contact grid lines. In this work, investigation of the microstructure and the electrical characteristics of nickel monosilicide (NiSi) ohmic contacts on the rear side of c-Si solar cells has been carried out. Significant enhancement in the fill factor leading to increasing the total power conversion efficiency is observed. Second, advanced classes of modern application require a new generation of versatile solar cells showcasing extreme mechanical resilience. However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption with less active Si material. Here, a complementary metal oxide semiconductor (CMOS) technology based integration strategy is designed where corrugation architecture to enable an ultra-flexible solar cell module from bulk mono-crystalline silicon solar wafer with 17% efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness and achieves flexibility via interdigitated back contacts. These cells

  2. Report for fiscal 1998 on results of research and development of silicon-based polymeric material. Material research for the liquid methane fueled aircraft engine; 1998 nendo keisokei kobunshi zairyo no kenkyu kaihatsu seika hokokusho. Methane nenryo kokukiyo engine kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    Research was conducted for the purpose of establishing basic technology concerning molecular design, synthesis, material formation, and evaluation of silicon-based polymers which are expected to provide superior electronic/optical functions, high heat/combustion resistance and dynamic properties. The research subjects were such as following: research and development of silicon-based polymeric materials with sea-island microstructures; research and development of silicon-based polymeric materials with sea-island microstructures; research and development on IPN formation with silicon-based polymers; research and development of hybrid silicon polymers with organometallic compounds; research and development of silicon containing polymer materials with ring structures; general committee for investigation and research; the optimized low-temperature Wurtz synthesis and modification of polysilanes; study of unsaturated and hypercoordinate organosilicon compounds; basic studies on the synthesis and properties of silicon-based high polymers; studies of new monomer-synthesis and their polymerization reaction; studies on new method of preparation and functionalization of polysilanes; novel applications of silicon-based polymers in imaging devices for information display, memory, and recordings; and molecular design of silicon-containing {pi}-conjugated and {sigma}-conjugated compounds. (NEDO)

  3. PREFACE: E-MRS 2012 Spring Meeting, Symposium M: More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics

    Science.gov (United States)

    Wenger, Christian; Fompeyrine, Jean; Vallée, Christophe; Locquet, Jean-Pierre

    2012-12-01

    More than Moore explores a new area of Silicon based microelectronics, which reaches beyond the boundaries of conventional semiconductor applications. Creating new functionality to semiconductor circuits, More than Moore focuses on motivating new technological possibilities. In the past decades, the main stream of microelectronics progresses was mainly powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano scale, and SoC based system integration. While the microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there is increasing momentum for the development of 'More than Moore' technologies which are based on silicon technologies but do not simply scale with Moore's law. Typical examples are RF, Power/HV, Passives, Sensor/Actuator/MEMS or Bio-chips. The More than Moore strategy is driven by the increasing social needs for high level heterogeneous system integration including non-digital functions, the necessity to speed up innovative product creation and to broaden the product portfolio of wafer fabs, and the limiting cost and time factors of advanced SoC development. It is believed that More than Moore will add value to society on top of and beyond advanced CMOS with fast increasing marketing potentials. Important key challenges for the realization of the 'More than Moore' strategy are: perspective materials for future THz devices materials systems for embedded sensors and actuators perspective materials for epitaxial approaches material systems for embedded innovative memory technologies development of new materials with customized characteristics The Hot topics covered by the symposium M (More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics) at E-MRS 2012 Spring Meeting, 14-18 May 2012 have been: development of functional ceramics thin films New dielectric materials for advanced microelectronics bio- and CMOS compatible

  4. Strained silicon as a new electro-optic material

    DEFF Research Database (Denmark)

    Jacobsen, Rune Shim; Andersen, Karin Nordström; Borel, Peter Ingo

    2006-01-01

    For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized1, 2. The slow progress within silicon optoelectronics, where electronic and optical...... functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon3. Recently, however, a continuous-wave Raman silicon laser was demonstrated4; if an effective modulator could also be realized in silicon, data...... processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top...

  5. Report for fiscal 1998 on results of research and development of silicon-based polymeric material; 1998 nendo keisokei kobunshi zairyo no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The research and development of 'silicon-based polymeric materials' has been implemented under ten year plan since 1991 by the research and development system for industrial science and technology, with the following subjects conducted in the general accounting section of fiscal 1998. In the research and development of the synthetic technology of electrically conductive silicon-based polymeric materials, a synthetic method was established for unsaturated side-chain group polysilanes as a basic structural unit for structuring multidimensions. In the research and development of the synthetic technology of new silicon-based polymeric materials capable of plotting circuits, network-shaped polysilanes with various amino groups introduced were synthesized, for which electrical conductivity and temperature dependency were measured. In the research and development of new silicon-based polymeric materials with an electro-luminous function and the like, polymeric synthesis began developing smoothly that has hole-transporting and electron transporting properties concerning the electro-luminous function. In the research and development of silicon-based photoelectric conversion materials, examination was made on the improvement of photoelectric conversion performance by materialization technology including lamination and mixture. The general investigation and research committee contrived further advancement of the research and development. (NEDO)

  6. Economic assessment of possible electron accelerator applications in curing silicon rubber based electric installation material

    International Nuclear Information System (INIS)

    Rmot, L.

    1976-01-01

    A description is given of the conventional technology of production of conductors with silicon rubber insulation and of the radiation vulcanization method, i.e., the radiation cross-linking of silicon rubber. An economic comparison is shown for both technologies. The analysis shows that the indices for the radiation cross-linking technology are favourable and that the introduction thereof would be advantageous. (J.P.)

  7. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Fiorentino, Giuseppe, E-mail: g.fiorentino@tudelft.nl; Morana, Bruno [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands); Forte, Salvatore [Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy); Sarro, Pasqualina Maria [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  8. Structural and magnetic properties of the nanocomposite materials based on a mesoporous silicon dioxide matrix

    Energy Technology Data Exchange (ETDEWEB)

    Grigor’eva, N. A., E-mail: natali@lns.pnpi.spb.ru [St. Petersburg State University (Russian Federation); Eckerlebe, H. [Helmholtz-Zentrum Geesthacht (Germany); Eliseev, A. A.; Lukashin, A. V.; Napol’skii, K. S. [Moscow State University (Russian Federation); Kraje, M. [Reactor Institute Delft (Netherlands); Grigor’ev, S. V. [St. Petersburg State University (Russian Federation)

    2017-03-15

    The structural and magnetic properties of the mesoporous systems based on silicon dioxide with a regular hexagonal arrangement of pores several microns in length and several nanometers in diameter, which are filled with iron compound nanofilaments in various chemical states, are studied in detail. The studies are performed using the following mutually complementary methods: transmission electron microscopy, SQUID magnetometry, electron spin resonance, Mössbauer spectroscopy, polarized neutron small-angle diffraction, and synchrotron radiation diffraction. It is shown that the iron nanoparticles in pores are mainly in the γ phase of Fe{sub 2}O{sub 3} with a small addition of the α phase and atomic iron clusters. The effective magnetic field acting on a nanofilament from other nanofilaments is 11 mT and has a dipole nature, the ferromagnetic–paramagnetic transition temperature is in the range 76–94 K depending on the annealing temperature of the samples, and the temperature that corresponds to the change in the magnetic state of the iron oxide nanofilaments is T ≈ 50–60 K at H = 0 and T ≈ 80 K at H = 300 mT. It is also shown that the magnetization reversal of an array of nanofilaments is caused by the magnetostatic interaction between nanofilaments at the fields that are lower than the saturation field.

  9. High surface area silicon materials: fundamentals and new technology.

    Science.gov (United States)

    Buriak, Jillian M

    2006-01-15

    Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

  10. Silicon Alloying On Aluminium Based Alloy Surface

    International Nuclear Information System (INIS)

    Suryanto

    2002-01-01

    Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

  11. Germanium silicon physics and materials

    CERN Document Server

    Willardson, R K; Bean, John C; Hull, Robert

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  12. Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

    Directory of Open Access Journals (Sweden)

    Konstantinos Pantzas

    2015-10-01

    Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

  13. A molecular method to assess bioburden embedded within silicon-based resins used on modern spacecraft materials

    Science.gov (United States)

    Stam, Christina N.; Bruckner, James; Spry, J. Andy; Venkateswaran, Kasthuri; La Duc, Myron T.

    2012-07-01

    Current assessments of bioburden embedded in spacecraft materials are based on work performed in the Viking era (1970s), and the ability to culture organisms extracted from such materials. To circumvent the limitations of such approaches, DNA-based techniques were evaluated alongside established culturing techniques to determine the recovery and survival of bacterial spores encapsulated in spacecraft-qualified polymer materials. Varying concentrations of Bacillus pumilus SAFR-032 spores were completely embedded in silicone epoxy. An organic dimethylacetamide-based solvent was used to digest the epoxy and spore recovery was evaluated via gyrB-targeted qPCR, direct agar plating, most probably number analysis, and microscopy. Although full-strength solvent was shown to inhibit the germination and/or outgrowth of spores, dilution in excess of 100-fold allowed recovery with no significant decrease in cultivability. Similarly, qPCR (quantitative PCR) detection sensitivities as low as ~103 CFU ml-1 were achieved upon removal of inhibitory substances associated with the epoxy and/or solvent. These detection and enumeration methods show promise for use in assessing the embedded bioburden of spacecraft hardware.

  14. FY 1991 Report on the results of the research and development of silicon-based high-molecular-weight materials; 1991 nendo keisokei kobunshi zairyo no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1992-03-01

    The research and development project has been started to establish the basic technologies for molecular designs, synthesis, material production and evaluation of silicon-based high-molecular-weight materials expected to exhibit excellent characteristics, e.g., electro-optical functions, resistance to heat, flame retardance and mechanical properties. The efforts in FY 1991, the first year for the 10-year project, are mainly directed to the surveys on the R and D trends, both domestic and foreign, to clarify the relationship between the structures and functions/properties. The R and D projects followed include the technologies for synthesizing (1) electroconductive silicon-based high-molecular-weight materials, (2) novel silicon-based high-molecular-weight materials capable of drawing circuits, (3) novel, light-emitting silicon-based high-molecular-weight materials and (4) silicon-based opto-electric conversion materials for the electro-optical functional high-molecular-weight materials; and (1) synthesis of high-molecular-weight structural materials of sea island structure, (2) technologies for forming inter-penetrating type structures (IPN), (3) development of composite structural materials of organometallic complex and silicon-based high-molecular-weight material, and (4) development of silicon-based high-molecular-weight materials of ring structure for the high-molecular-weight structural materials. (NEDO)

  15. Fiscal 1992 R and D project for next generation infrastructure technology. Report on results of R and D on silicon-based polymeric material; 1992 nendo keisokei kobunshi zairyo no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1993-03-01

    R and D was conducted with the purpose of establishing fundamental technologies for molecular design, synthesis, material formation and evaluation method concerning silicon-based polymer. with the fiscal 1992 results summarized. In the studies on synthesis technology of electrically conductive silicon-based polymeric materials, silicon-based compounds were synthesized including in particular -Si-Si- bond and carbon multiple bond like -C-C-, with acquisition/analysis of material data started. In the studies on new silicon-based polymeric materials capable of circuit plotting, syntheses were performed for network polysilanes through the disproportionation reaction of alkoxydisilanes. In the studies on new silicon-based polymeric materials having a light emitting function, evaluation of oxidation-reduction potential and search for synthesizing conditions were performed for halosilanes and hydrosilanes. In the studies on silicon-based photoelectric conversion materials, molecular design progressed using a crystal orbital method. Furthermore, researches were implemented on such subjects as silicon-based polymeric materials having a sea-island structure, interpenetrating polymer network forming technologies, and composite structural materials composed of organic metallic complex and silicon-based polymers. (NEDO)

  16. Athermal silicon optical add-drop multiplexers based on thermo-optic coefficient tuning of sol-gel material.

    Science.gov (United States)

    Namnabat, Soha; Kim, Kyung-Jo; Jones, Adam; Himmelhuber, Roland; DeRose, Christopher T; Trotter, Douglas C; Starbuck, Andrew L; Pomerene, Andrew; Lentine, Anthony L; Norwood, Robert A

    2017-09-04

    Silicon photonics has gained interest for its potential to provide higher efficiency, bandwidth and reduced power consumption compared to electrical interconnects in datacenters and high performance computing environments. However, it is well known that silicon photonic devices suffer from temperature fluctuations due to silicon's high thermo-optic coefficient and therefore, temperature control in many applications is required. Here we present an athermal optical add-drop multiplexer fabricated from ring resonators. We used a sol-gel inorganic-organic hybrid material as an alternative to previously used materials such as polymers and titanium dioxide. In this work we studied the thermal curing parameters of the sol-gel and their effect on thermal wavelength shift of the rings. With this method, we were able to demonstrate a thermal shift down to -6.8 pm/°C for transverse electric (TE) polarization in ring resonators with waveguide widths of 325 nm when the sol-gel was cured at 130°C for 10.5 hours. We also achieved thermal shifts below 1 pm/°C for transverse magnetic (TM) polarization in the C band under different curing conditions. Curing time compared to curing temperature shows to be the most important factor to control sol-gel's thermo-optic value in order to obtain an athermal device in a wide temperature range.

  17. Materials of construction for silicon crystal growth

    Science.gov (United States)

    Leipold, M. H.; Odonnell, T. P.; Hagan, M. A.

    1980-01-01

    The performance of materials for construction and in contact with molten silicon for crystal growth is presented. The basis for selection considers physical compatibility, such as thermal expansion and strength, as well as chemical compatibility as indicated by contamination of the silicon. A number of new high technology materials are included as well as data on those previously used. Emphasis is placed on the sources and processing of such materials in that results are frequently dependent on the way a material is prepared as well as its intrinsic constituents.

  18. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  19. First-principles studies of a photovoltaic material based on silicon heavily codoped with sulfur and nitrogen

    Science.gov (United States)

    Dong, Xiao; Wang, Yongyong; Song, Xiaohui; Yang, Feng

    2018-03-01

    In silicon co-hyperdoped with nitrogen and sulfur, dopant atoms tend to form dimers in the near-equilibrium process. The dimer that contains substitutional N and S atoms has the lowest formation energy and can form an impurity band that overlaps with the conduction band (CB). When separating the two atoms far apart from each other, the impurity band is clearly isolated from the CB and becomes an intermediate band (IB). The sub-band-gap absorption decreases with the decrease in the substitutional atom distance. The sub-band-gap absorption of the material is the combined effect of the configurations with different N-S distances.

  20. Singlet oxygen sensitizing materials based on porous silicone: photochemical characterization, effect of dye reloading and application to water disinfection with solar reactors.

    Science.gov (United States)

    Manjón, Francisco; Santana-Magaña, Montserrat; García-Fresnadillo, David; Orellana, Guillermo

    2010-06-01

    Photogeneration of singlet molecular oxygen ((1)O(2)) is applied to organic synthesis (photooxidations), atmosphere/water treatment (disinfection), antibiofouling materials and in photodynamic therapy of cancer. In this paper, (1)O(2) photosensitizing materials containing the dyes tris(4,4'-diphenyl-2,2'-bipyridine)ruthenium(II) (1, RDB(2+)) or tris(4,7-diphenyl-1,10-phenanthroline)ruthenium(II) (2, RDP(2+)), immobilized on porous silicone (abbreviated RDB/pSil and RDP/pSil), have been produced and tested for waterborne Enterococcus faecalis inactivation using a laboratory solar simulator and a compound parabolic collector (CPC)-based solar photoreactor. In order to investigate the feasibility of its reuse, the sunlight-exposed RDP/pSil sensitizing material (RDP/pSil-a) has been reloaded with RDP(2+) (RDP/pSil-r). Surprisingly, results for bacteria inactivation with the reloaded material have demonstrated a 4-fold higher efficiency compared to those of either RDP/pSil-a, unused RDB/pSil and the original RDP/pSil. Surface and bulk photochemical characterization of the new material (RDP/pSil-r) has shown that the bactericidal efficiency enhancement is due to aggregation of the silicone-supported photosensitizer on the surface of the polymer, as evidenced by confocal fluorescence lifetime imaging microscopy (FLIM). Photogenerated (1)O(2) lifetimes in the wet sensitizer-doped silicone have been determined to be ten times longer than in water. These facts, together with the water rheology in the solar reactor and the interfacial production of the biocidal species, account for the more effective disinfection observed with the reloaded photosensitizing material. These results extend and improve the operational lifetime of photocatalytic materials for point-of-use (1)O(2)-mediated solar water disinfection.

  1. Amorphous silicon as high index photonic material

    Science.gov (United States)

    Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

    2009-05-01

    Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

  2. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...

  3. Fiscal 1993 R and D project for industrial science and technology. Report on results of R and D on silicon-based high polymer material; 1993 nendo keisokei kobunshi zairyo no kenkyu kaihtsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-03-01

    R and D was conducted on the silicon-based high polymer that are hoped for superior electronic/optical functions and heat/flame-resistant dynamical properties, for the purpose of establishing fundamental technologies such as molecular design, synthesis, material forming and evaluation method, with the fiscal 1993 results summarized. In the synthesis of electrically conductive silicon-based polymeric materials, a concept of indirect doping was presented, revealing that workability and electrically conductive properties were enhanced by additives. In the synthesis of new silicon-based polymeric materials capable of circuit plotting, studies were made on Si-Si bond forming reaction of alkoxydisilanes as well as on the correlation between polysilane skeleton structure and its property. In the synthesis of new silicon-based polymeric materials having for example a light-emitting function, evaluation was made on synthesis and light emitting property concerning the compound that controlled the silicon skeleton structure. In addition, R and D was conducted on the precision synthesis technology of compounds, on which manifestation of photoelectric conversion function was expected. Further, research was done on unsaturated and high coordination organosilicic compound, functionality of silicon-based high polymer, and synthesis/polymerization of silicon monomer. (NEDO)

  4. Materials issues in silicon integrated circuit processing

    International Nuclear Information System (INIS)

    Wittmer, M.; Stimmell, J.; Strathman, M.

    1986-01-01

    The symposium on ''Materials Issues in Integrated Circuit Processing'' sought to bring together all of the materials issued pertinent to modern integrated circuit processing. The inherent properties of the materials are becoming an important concern in integrated circuit manufacturing and accordingly research in materials science is vital for the successful implementation of modern integrated circuit technology. The session on Silicon Materials Science revealed the advanced stage of knowledge which topics such as point defects, intrinsic and extrinsic gettering and diffusion kinetics have achieved. Adaption of this knowledge to specific integrated circuit processing technologies is beginning to be addressed. The session on Epitaxy included invited papers on epitaxial insulators and IR detectors. Heteroepitaxy on silicon is receiving great attention and the results presented in this session suggest that 3-d integrated structures are an increasingly realistic possibility. Progress in low temperature silicon epitaxy and epitaxy of thin films with abrupt interfaces was also reported. Diffusion and Ion Implantation were well presented. Regrowth of implant-damaged layers and the nature of the defects which remain after regrowth were discussed in no less than seven papers. Substantial progress was also reported in the understanding of amorphising boron implants and the use of gallium implants for the formation of shallow p/sup +/ -layers

  5. Mechanical properties of silicone based composites as a temperature insensitive ballistic backing material for quantifying back face deformation.

    Science.gov (United States)

    Edwards, Tara D; Bain, Erich D; Cole, Shawn T; Freeney, Reygan M; Halls, Virginia A; Ivancik, Juliana; Lenhart, Joseph L; Napadensky, Eugene; Yu, Jian H; Zheng, James Q; Mrozek, Randy A

    2018-04-01

    This paper describes a new witness material for quantifying the back face deformation (BFD) resulting from high rate impact of ballistic protective equipment. Accurate BFD quantification is critical for the assessment and certification of personal protective equipment, such as body armor and helmets, and ballistic evaluation. A common witness material is ballistic clay, specifically, Roma Plastilina No. 1 (RP1). RP1 must be heated to nearly 38°C to pass calibration, and used within a limited time frame to remain in calibration. RP1 also exhibits lot-to-lot variability and is sensitive to time, temperature, and handling procedures, which limits the BFD accuracy and reproducibility. A new silicone composite backing material (SCBM) was developed and tested side-by-side with heated RP1 using quasi-static indentation and compression, low velocity impact, spherical projectile penetration, and both soft and hard armor ballistic BFD measurements to compare their response over a broad range of strain rates and temperatures. The results demonstrate that SCBM mimics the heated RP1 response at room temperature and exhibits minimal temperature sensitivity. With additional optimization of the composition and processing, SCBM could be a drop-in replacement for RP1 that is used at room temperature during BFD quantification with minimal changes to the current RP1 handling protocols and infrastructure. It is anticipated that removing the heating requirement, and temperature-dependence, associated with RP1 will reduce test variability, simplify testing logistics, and enhance test range productivity. Published by Elsevier B.V.

  6. Carbon Cryogel Silicon Composite Anode Materials for Lithium Ion Batteries

    Science.gov (United States)

    Woodworth James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 10 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-4,9 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  7. Silicon as an anisotropic mechanical material

    DEFF Research Database (Denmark)

    Thomsen, Erik Vilain; Reck, Kasper; Skands, Gustav Erik

    2014-01-01

    While silicon is an anisotropic material it is often in literature treated as an isotropic material when it comes to plate calculations. This leads to considerable errors in the calculated deflection. To overcome this problem, we present an in-depth analysis of the bending behavior of thin crysta...... analytical models involving crystalline plates, such as those often found in the field of micro electro mechanical systems. The effect of elastic boundary conditions is taken into account by using an effective radius of the plate....

  8. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    Science.gov (United States)

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  9. Polishing of silicon based advanced ceramics

    Science.gov (United States)

    Klocke, Fritz; Dambon, Olaf; Zunke, Richard; Waechter, D.

    2009-05-01

    Silicon based advanced ceramics show advantages in comparison to other materials due to their extreme hardness, wear and creep resistance, low density and low coefficient of thermal expansion. As a matter of course, machining requires high efforts. In order to reach demanded low roughness for optical or tribological applications a defect free surface is indispensable. In this paper, polishing of silicon nitride and silicon carbide is investigated. The objective is to elaborate scientific understanding of the process interactions. Based on this knowledge, the optimization of removal rate, surface quality and form accuracy can be realized. For this purpose, fundamental investigations of polishing silicon based ceramics are undertaken and evaluated. Former scientific publications discuss removal mechanisms and wear behavior, but the scientific insight is mainly based on investigations in grinding and lapping. The removal mechanisms in polishing are not fully understood due to complexity of interactions. The role of, e.g., process parameters, slurry and abrasives, and their influence on the output parameters is still uncertain. Extensive technological investigations demonstrate the influence of the polishing system and the machining parameters on the stability and the reproducibility. It is shown that the interactions between the advanced ceramics and the polishing systems is of great relevance. Depending on the kind of slurry and polishing agent the material removal mechanisms differ. The observed effects can be explained by dominating mechanical or chemo-mechanical removal mechanisms. Therefore, hypotheses to state adequate explanations are presented and validated by advanced metrology devices, such as SEM, AFM and TEM.

  10. Hybrid Silicon-Based Organic/Inorganic Block Copolymers with Sol-Gel Active Moieties: Synthetic Advances, Self-Assembly and Applications in Biomedicine and Materials Science.

    Science.gov (United States)

    Czarnecki, Sebastian; Bertin, Annabelle

    2018-03-07

    Hybrid silicon-based organic/inorganic (multi)block copolymers are promising polymeric precursors to create robust nano-objects and nanomaterials due to their sol-gel active moieties via self-assembly in solution or in bulk. Such nano-objects and nanomaterials have great potential in biomedicine as nanocarriers or scaffolds for bone regeneration as well as in materials science as Pickering emulsifiers, photonic crystals or coatings/films with antibiofouling, antibacterial or water- and oil-repellent properties. Thus, this Review outlines recent synthetic efforts in the preparation of these hybrid inorganic/organic block copolymers, gives an overview of their self-assembled structures and finally presents recent examples of their use in the biomedical field and material science. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Development of silicone rubber-type neutron shielding material

    International Nuclear Information System (INIS)

    Do, Jae Bum; Cho, Soo Hang; Kim, Ik Soo; Oh, Seung Chul; Hong, Soon Seok; Noh, Sung Ki; Jeong, Duk Yeon.

    1997-06-01

    Because the exposure to radiation in the nuclear facilities can be fatal to human, it is important to reduce the radiation dose level to a tolerable level. The purpose of this study is to develop highly effective neutron shielding materials for the shipping and storage cask of radioactive materials or in the nuclear/radiation facilities. On this study, we developed silicone rubber based neutron shielding materials and their various material properties, including neutron shielding ability, fire resistance, combustion characteristics, radiation resistance, thermal and mechanical properties were evaluated experimentally. (author). 16 tabs., 17 figs., 25 refs

  12. Solar cell structure incorporating a novel single crystal silicon material

    Science.gov (United States)

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  13. Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

    Science.gov (United States)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

    1982-01-01

    The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

  14. Temperature detectors on irradiated silicon base

    International Nuclear Information System (INIS)

    Karimov, M.; Dzhalelov, M.A.; Kurbanov, A.O.

    2005-01-01

    It is well known, that the most suitable for thermal resistors production is compensated silicon with impurities forming deep lying in forbidden zone, having big negative resistance temperature coefficients (RTC). In the capacity of initial materials for thermal resistors with negative RTC the n-type monocrystalline silicon with specific resistance ∼30 Ω·cm at 300 K is applied. Before the irradiation the phosphorus diffusion is realizing at temperature ∼1000 deg. C for 10 min. Irradiation is putting into practise by WWR-SM reactor fast neutrons within the range (7-10)·10 13 cm -2 . The produced resistors have nominal resistance range (8-20)·10 3 Ω·cm, coefficient of the thermal sensitivity B=4000-6000 deg. C., RTC α 300K =4-6.6 %/grad. It is shown, that offered method allows to obtain same type resistors characteristics on the base of neutron-irradiated material

  15. Process Research on Polycrystalline Silicon Material (PROPSM)

    Science.gov (United States)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  16. Understanding the interface between silicon-based materials and water: Molecular-dynamics exploration of infrared spectra

    Directory of Open Access Journals (Sweden)

    José A. Martinez-Gonzalez

    2017-11-01

    Full Text Available Molecular-dynamics simulations for silicon, hydrogen- and hydroxyl-terminated silicon in contact with liquid water, at 220 and 300 K, display water-density ‘ordering’ along the laboratory z-axis, emphasising the hydrophobicity of the different systems and the position of this first adsorbed layer. Density of states (DOS of the oxygen and proton velocity correlation functions (VACFs and infrared (IR spectra of the first monolayer of adsorbed water, calculated via Fourier transformation, indicate similarities to more confined, ice-like dynamical behaviour (redolent of ice. It was observed that good qualitative agreement is obtained between the DOS for this first layer in all systems. The DOS for the lower-frequency zone indicates that for the interface studied (i.e., the first layer near the surface, the water molecules try to organise in a similar form, and that this form is intermediate between liquid water and ice. For IR spectra, scrutiny of the position of the highest-intensity peaks for the stretching and bending bands indicate that such water molecules in the first solvating layer are organised in an intermediate fashion between ice and liquid water.

  17. Will silicon be the photonic material of the third millenium?

    International Nuclear Information System (INIS)

    Pavesi, L

    2003-01-01

    Silicon microphotonics, a technology which merges photonics and silicon microelectronic components, is rapidly evolving. Many different fields of application are emerging: transceiver modules for optical communication systems, optical bus systems for ULSI circuits, I/O stages for SOC, displays, .... In this review I will give a brief motivation for silicon microphotonics and try to give the state-of-the-art of this technology. The ingredient still lacking is the silicon laser: a review of the various approaches will be presented. Finally, I will try to draw some conclusions where silicon is predicted to be the material to achieve a full integration of electronic and optical devices. (topical review)

  18. Optimization of Fluorescent Silicon Nano material Production Using Peroxide/ Acid/ Salt Technique

    International Nuclear Information System (INIS)

    Abuhassan, L.H.

    2009-01-01

    Silicon nano material was prepared using the peroxide/ acid/ salt technique in which an aqueous silicon-based salt solution was added to H 2 O 2 / HF etchants. In order to optimize the experimental conditions for silicon nano material production, the amount of nano material produced was studied as a function of the volume of the silicon salt solution used in the synthesis. A set of samples was prepared using: 0, 5, 10, 15, and 20 ml of an aqueous 1 mg/ L metasilicate solution. The area under the corresponding peaks in the infrared (ir) absorption spectra was used as a qualitative indicator to the amount of the nano material present. The results indicated that using 10 ml of the metasilicate solution produced the highest amount of nano material. Furthermore, the results demonstrated that the peroxide/ acid/ salt technique results in the enhancement of the production yield of silicon nano material at a reduced power demand and with a higher material to void ratio. A model in which the silicon salt forms a secondary source of silicon nano material is proposed. The auxiliary nano material is deposited into the porous network causing an increase in the amount of nano material produced and a reduction in the voids present. Thus a reduction in the resistance of the porous layer, and consequently reduction in the power required, are expected. (author)

  19. Comparison of silicone and spin-on glass packaging materials for light-emitting diode encapsulation

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Liann-Be; Pan, Ke-Wei; Yen, Chia-Yi [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Jeng, Ming-Jer, E-mail: mjjeng@mail.cgu.edu.tw [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Wu, Chun-Te; Hu, Sung-Cheng; Kuo, Yang-Kuao [Chemical Systems Research Division, Chung-Shan Institute of Science and Technology Armaments Bureau, MND, Taoyuan, Taiwan (China)

    2014-11-03

    Traditional white light light-emitting diode (LED) encapsulation is performed by mixed phosphors and silicone coating on LED die. However, this encapsulation with silicone coating incurs overheated temperatures and yellowing problem. Therefore, this work attempts to replace silicone paste by using spin-on-glass (SOG) materials. Experimental results indicate that although initial brightness of SOG-based packaging is lower than that of silicone packaging, its light attenuation is significantly lower than that of silicone for a long lighting time. After the LED power is turned on for 12 h, the brightness of LED with silicone and SOG material packaging decreases from 84 to 48 lm and 73 to 59 lm, respectively. Therefore, SOG material provides an alternative packaging solution for high power LED lighting applications. - Highlights: • Spin-on-glass (SOG) material was used to replace silicone coating for LED packaging. • Initial brightness of SOG packaging is lower than that of silicone packaging. • Over time, light attenuation in SOG is much lower than that in silicone. • Color rendering index and brightness of LED packaging was optimized by Taguchi method.

  20. Research and development of photovoltaic power system. Study on structural defects in silicon-based amorphous materials; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kei zairyo no kozo kekkan ni kansuru kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, T [Kanazawa University, Ishikawa (Japan). Faculty of Engineering

    1994-12-01

    Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several seconds to several hours at 77K for the a-Si-H systems containing N in a range from 0 to 12at%. The other results presented are space distribution of neutral defects of light-irradiated a-Si-H systems, and rejuvenation process of light-induced spin for the a-Si(1-x)N(x):H composition. 6 figs.

  1. Silicone-based Dielectric Elastomers

    DEFF Research Database (Denmark)

    Skov, Anne Ladegaard

    Efficient conversion of energy from one form to another (transduction) is an important topic in our daily day, and it is a necessity in moving away from the fossil based society. Dielectric elastomers hold great promise as soft transducers, since they are compliant and light-weight amongst many...... energy efficient solutions are highly sought. These properties allow for interesting products ranging very broadly, e.g. from eye implants over artificial skins over soft robotics to huge wave energy harvesting plants. All these products utilize the inherent softness and compliance of the dielectric...... elastomer transducers. The subject of this thesis is improvement of properties of silicone-based dielectric elastomers with special focus on design guides towards electrically, mechanically, and electromechanically reliable elastomers. Strategies for improving dielectric elastomer performance are widely...

  2. Silicon-based sleeve devices for chemical reactions

    Science.gov (United States)

    Northrup, M. Allen; Mariella, Jr., Raymond P.; Carrano, Anthony V.; Balch, Joseph W.

    1996-01-01

    A silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

  3. Nanostructured silicon for photonics from materials to devices

    CERN Document Server

    Gaburro, Z; Daldosso, N

    2006-01-01

    The use of light to channel signals around electronic chips could solve several current problems in microelectronic evolution including: power dissipation, interconnect bottlenecks, input/output from/to optical communication channels, poor signal bandwidth, etc. It is unfortunate that silicon is not a good photonic material: it has a poor light-emission efficiency and exhibits a negligible electro-optical effect. Silicon photonics is a field having the objective of improving the physical properties of silicon; thus turning it into a photonic material and permitting the full convergence of elec

  4. Silicon nanowire-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

    2008-07-23

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

  5. Silicon nanowire-based solar cells

    International Nuclear Information System (INIS)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

    2008-01-01

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

  6. Silicon radiation detectors: materials and applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Haller, E.E.

    1982-10-01

    Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

  7. Advanced silicon materials for photovoltaic applications

    CERN Document Server

    Pizzini, Sergio

    2012-01-01

    Today, the silicon feedstock for photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Ev

  8. Flat-plate solar array project. Volume 2: Silicon material

    Science.gov (United States)

    Lutwack, R.

    1986-10-01

    The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

  9. Flat-plate solar array project. Volume 2: Silicon material

    Science.gov (United States)

    Lutwack, R.

    1986-01-01

    The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

  10. The chemo-mechanical effect of cutting fluid on material removal in diamond scribing of silicon

    Science.gov (United States)

    Kumar, Arkadeep; Melkote, Shreyes N.

    2017-07-01

    The mechanical integrity of silicon wafers cut by diamond wire sawing depends on the damage (e.g., micro-cracks) caused by the cutting process. The damage type and extent depends on the material removal mode, i.e., ductile or brittle. This paper investigates the effect of cutting fluid on the mode of material removal in diamond scribing of single crystal silicon, which simulates the material removal process in diamond wire sawing of silicon wafers. We conducted scribing experiments with a diamond tipped indenter in the absence (dry) and in the presence of a water-based cutting fluid. We found that the cutting mode is more ductile when scribing in the presence of cutting fluid compared to dry scribing. We explain the experimental observations by the chemo-mechanical effect of the cutting fluid on silicon, which lowers its hardness and promotes ductile mode material removal.

  11. Material properties that predict preservative uptake for silicone hydrogel contact lenses.

    Science.gov (United States)

    Green, J Angelo; Phillips, K Scott; Hitchins, Victoria M; Lucas, Anne D; Shoff, Megan E; Hutter, Joseph C; Rorer, Eva M; Eydelman, Malvina B

    2012-11-01

    To assess material properties that affect preservative uptake by silicone hydrogel lenses. We evaluated the water content (using differential scanning calorimetry), effective pore size (using probe penetration), and preservative uptake (using high-performance liquid chromatography with spectrophotometric detection) of silicone and conventional hydrogel soft contact lenses. Lenses grouped similarly based on freezable water content as they did based on total water content. Evaluation of the effective pore size highlighted potential differences between the surface-treated and non-surface-treated materials. The water content of the lens materials and ionic charge are associated with the degree of preservative uptake. The current grouping system for testing contact lens-solution interactions separates all silicone hydrogels from conventional hydrogel contact lenses. However, not all silicone hydrogel lenses interact similarly with the same contact lens solution. Based upon the results of our research, we propose that the same material characteristics used to group conventional hydrogel lenses, water content and ionic charge, can also be used to predict uptake of hydrophilic preservatives for silicone hydrogel lenses. In addition, the hydrophobicity of silicone hydrogel contact lenses, although not investigated here, is a unique contact lens material property that should be evaluated for the uptake of relatively hydrophobic preservatives and tear components.

  12. Silicon based ultrafast optical waveform sampling

    DEFF Research Database (Denmark)

    Ji, Hua; Galili, Michael; Pu, Minhao

    2010-01-01

    A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode-locker as th......A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode......-locker as the sampling source. A clear eye-diagram of a 320 Gbit/s data signal is obtained. The temporal resolution of the sampling system is estimated to 360 fs....

  13. Why silicon is and will remain the dominant photovoltaic material

    Science.gov (United States)

    Singh, Rajendra

    2009-07-01

    Rising demands of energy in emerging economies, coupled with the green house gas emissions related problems around the globe have provided a unique opportunity of exploiting the advantages offered by photovoltaic (PV) systems for green energy electricity generation. Similar to cell phones, power generated by PV systems can reach over two billion people worldwide who have no access to clean energy. Only silicon based PV devices meet the low-cost manufacturing criterion of clean energy conversion (abundance of raw material and no environmental health and safety issues). The use of larger size glass substrates and manufacturing techniques similar to the ones used by the liquid crystal display industry and the large scale manufacturing of amorphous silicon thin films based modules (~ GW per year manufacturing at a single location) can lead to installed PV system cost of $3/Wp. This will open a huge market for grid connected PV systems and related markets. With further research and development, this approach can provide $2/Wp installed PV system costs in the next few years. At this cost level, PV electricity generation is competitive with any other technology, and PV power generation can be a dominant electricity generation technology in the 21st century.

  14. Packaged mode multiplexer based on silicon photonics

    NARCIS (Netherlands)

    Chen, H.; Koonen, A.M.J.; Snyder, B.; Raz, O.; Boom, van den H.P.A.; Chen, X.

    2012-01-01

    A silicon photonics based mode multiplexer is proposed. Four chirped grating couplers structure can support all 6 channels in a two-mode fiber and realize LP01 and LP11 mode selective exciting. The packaged device is tested.

  15. Evaluation on electrical resistivity of silicon materials after electron ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 38; Issue 5. Evaluation on ... This research deals with the study of electron beam melting (EBM) methodology utilized in melting silicon material and subsequently discusses on the effect of oxygen level on electrical resistivity change after EBM process. The oxygen ...

  16. Lithium ion batteries based on nanoporous silicon

    Science.gov (United States)

    Tolbert, Sarah H.; Nemanick, Eric J.; Kang, Chris Byung-Hwa

    2015-09-22

    A lithium ion battery that incorporates an anode formed from a Group IV semiconductor material such as porous silicon is disclosed. The battery includes a cathode, and an anode comprising porous silicon. In some embodiments, the anode is present in the form of a nanowire, a film, or a powder, the porous silicon having a pore diameters within the range between 2 nm and 100 nm and an average wall thickness of within the range between 1 nm and 100 nm. The lithium ion battery further includes, in some embodiments, a non-aqueous lithium containing electrolyte. Lithium ion batteries incorporating a porous silicon anode demonstrate have high, stable lithium alloying capacity over many cycles.

  17. Material Properties of Laser-Welded Thin Silicon Foils

    Directory of Open Access Journals (Sweden)

    M. T. Hessmann

    2013-01-01

    Full Text Available An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1 laser spot welding with low constant feed speed, (2 laser line welding, and (3 keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

  18. Defects and impurities in silicon materials an introduction to atomic-level silicon engineering

    CERN Document Server

    Langouche, Guido

    2015-01-01

    This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

  19. Fiscal 1997 project on the R and D of industrial scientific technology under consignment from NEDO. Report on the results of the R and D of silicon-based polymeric materials (development of liquid methane fueled aircraft engine); 1997 nendo sangyo kagaku gijutsu kenkyu kaihatsu jigyo / Shin energy Sangyo gijutsu Sogo Kaihatsu Kiko itaku. Keisokei kobunshi zairyo no kenkyu kaihatsu (methane nenryo kokukiyo engine kaihatsu) seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    This R and D aims at establishing the basic technology on the molecular design, synthesis, use as materials, and evaluation of silicon-based polymers, of which excellent electronic/optical functions, high heat-resistance/combustion-resistance/dynamic characteristic are expected. The paper introduced the results of the fiscal 1997 R and D of them. The themes are as follows: technology of synthesis of silicon-based polymeric materials with sea-island microstructures, interstitial type structure forming technology, composite materials with organometallic complexes and silicon-based polymers, silicon-based polymer structural materials with ring structures, optimization of the Wurtz`s synthesis method of silicon-based polymers, unsaturated and hypercoordinate organosilicic compounds, function of silicon-based polymers, synthesis and polymerization of new silicon-based monomers, development of a new synthesis method of polysilane and the function, development of new application of silicon-based polymers in imaging devices for recording/memory/display of information, molecular design of {pi}-conjugate and {sigma}-conjugate compounds including silicon, and conformation and electronic state of silicon-based polymeric materials. 186 refs., 141 figs., 68 tabs.

  20. Carbon Nanotube Templated Microfabrication of Porous Silicon-Carbon Materials

    Science.gov (United States)

    Song, Jun; Jensen, David; Dadson, Andrew; Vail, Michael; Linford, Matthew; Vanfleet, Richard; Davis, Robert

    2010-10-01

    Carbon nanotube templated microfabrication (CNT-M) of porous materials is demonstrated. Partial chemical infiltration of three dimensional carbon nanotube structures with silicon resulted in a mechanically robust material, precisely structured from the 10 nm scale to the 100 micron scale. Nanoscale dimensions are determined by the diameter and spacing of the resulting silicon/carbon nanotubes while the microscale dimensions are controlled by lithographic patterning of the CNT growth catalyst. We demonstrate the utility of this hierarchical structuring approach by using CNT-M to fabricate thin layer chromatography (TLC) separations media with precise microscale channels for fluid flow control and nanoscale porosity for high analyte capacity.

  1. Novel Concepts for Silicon Based Photovoltaics and Photoelectrochemistry

    NARCIS (Netherlands)

    Han, L.

    2015-01-01

    Long term concerns about climate change and fossil fuel depletion will require a transition towards energy systems powered by solar radiation or other renewable sources. Novel concepts based on silicon materials and devices are investigated for applications in the next generation photovoltaic (PV)

  2. Coated silicon comprising material for protection against environmental corrosion

    Science.gov (United States)

    Hazel, Brian Thomas (Inventor)

    2009-01-01

    In accordance with an embodiment of the invention, an article is disclosed. The article comprises a gas turbine engine component substrate comprising a silicon material; and an environmental barrier coating overlying the substrate, wherein the environmental barrier coating comprises cerium oxide, and the cerium oxide reduces formation of silicate glass on the substrate upon exposure to corrodant sulfates.

  3. Photonic Crystal Sensors Based on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Claudia Pacholski

    2013-04-01

    Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  4. Photonic Crystal Sensors Based on Porous Silicon

    Science.gov (United States)

    Pacholski, Claudia

    2013-01-01

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

  5. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

    1991-07-01

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  6. Hydrogen interactions with silicon-on-insulator materials

    OpenAIRE

    Rivera de Mena, A.J.

    2003-01-01

    The booming of microelectronics in recent decades has been made possible by the excellent properties of the Si/SiO2 interface in oxide on silicon systems.. This semiconductor/insulator combination has proven to be of great value for the semiconductor industry. It has made it possible to continuously increase the number of transistors per chip until the physical limit of integration is now almost reached. Silicon-on-insulator (SOI) materials were early on seen as a step in the logical evolutio...

  7. Process research of non-CZ silicon material

    Science.gov (United States)

    Campbell, R. B.

    1984-01-01

    Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

  8. Fiscal 1993 R and D project for industrial science and technology. Report on results in developing methane-fueled aircraft engine (R and D on silicon-based polymeric material); 1993 nendo methane nenryo kokukiyo engine kaihatsu seika hokokusho. Keisokei kobunshi zairyo no gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-03-01

    R and D was conducted on silicon-based polymeric materials for structural use, for the purpose of establishing fundamental technologies such as molecular design, synthesis, material forming and evaluation method concerning silicon-based polymers, with the fiscal 1993 results summarized. In the studies of synthesis technologies of silicon-based polymeric materials having a sea-island structure, a series of polymers with an Si-C main chain structure were prepared by ring-opening polymerization of the cyclic monomers. In the studies of interpenetrating polymer network (IPN) structure forming technologies, polycarbosilanes with superior thermal stability and solvent solubility were synthesized through structural control based on molecular design. In the studies of composite structural materials between organic metallic complex and silicon-based high polymer, the compounding was carried out by introducing or blending organic metallic complex into the main chain of silicon polymer, with evaluation made on the heat resistance. The studies of silicon polymer structural materials having a ring structure were conducted on high heat resistant polymers that were obtained by dehydrocoupling polymerization with magnesia as a catalyst. (NEDO)

  9. The dose distributions of γ ray in the silicon in and near the interfaces of silicon and various materials

    International Nuclear Information System (INIS)

    Ba Weizhen; Wu Qingzhi; He Chengfa; Chen Chaoyang

    1996-01-01

    The depth dose distributions of γ ray in the silicon in and near the interfaces of silicon and various materials, such as gold, have been studied. The dose distributions have been compared with equilibrium doses in the homogeneous silicon material, and considerable dose gradient distributions were obtained. In the case of silicon adjacent to high atomic numbered material, dose enhancement effects have been observed in and near the interfaces. The dose gradient distributions were explained by photoelectron effect, Auger effect and secondary electron transport mechanism of the low energy scattering photons

  10. Implementation Challenges for Sintered Silicon Carbide Fiber Bonded Ceramic Materials for High Temperature Applications

    Science.gov (United States)

    Singh, M.

    2011-01-01

    During the last decades, a number of fiber reinforced ceramic composites have been developed and tested for various aerospace and ground based applications. However, a number of challenges still remain slowing the wide scale implementation of these materials. In addition to continuous fiber reinforced composites, other innovative materials have been developed including the fibrous monoliths and sintered fiber bonded ceramics. The sintered silicon carbide fiber bonded ceramics have been fabricated by the hot pressing and sintering of silicon carbide fibers. However, in this system reliable property database as well as various issues related to thermomechanical performance, integration, and fabrication of large and complex shape components has yet to be addressed. In this presentation, thermomechanical properties of sintered silicon carbide fiber bonded ceramics (as fabricated and joined) will be presented. In addition, critical need for manufacturing and integration technologies in successful implementation of these materials will be discussed.

  11. Silicon materials outlook study for 1980-85 calendar years

    Energy Technology Data Exchange (ETDEWEB)

    Costogue, E.; Ferber, R.; Hasbach, W.; Pellin, R.; Yaws, C.

    1979-11-01

    Photovoltaic solar cell arrays converting solar energy into electrical energy can become a cost-effective, alternative energy source provided that an adequate supply of low-priced solar cell materials and automated fabrication techniques are available. Presently, the photovoltaic industry is dependent upon polycrystalline silicon which is produced primarily for the discrete semiconductor device industry. This dependency is expected to continue until DOE-sponsored new technology developments mature. Recent industry forecasts have predicted a limited supply of polycrystalline silicon material and a shortage could occur in the early 80's. The Jet Propulsion Laboratory's Technology Development and Application Lead Center formed an ad hoc committee at JPL, SERI and consultant personnel to conduct interviews with key polycrystalline manufacturers and a large cross-section of single crystal ingot growers and wafer manufacturers. Industry consensus and conclusions reached from the analysis of the data obtained by the committee are reported. The highlight of the study is that there is a high probability of polycrystalline silicon shortage by the end of CY 1982 and a strong seller's market after CY 1981 which will foster price competition for available silicon.

  12. Analyses and characterization of fossil carbonaceous materials for silicon production

    Energy Technology Data Exchange (ETDEWEB)

    Myrvaagnes, Viktor

    2008-01-15

    Production of high silicon alloys is carried out in submerged arc furnaces by reduction of silicon bearing oxides (typically quartz) with carbon materials. Carbonaceous materials like coal, coke, charcoal and woodchips are commonly used as reduction materials in the process. Primarily based on historical prices of charcoal compared to fossil reduction materials, the Norwegian Ferroalloy Industry has mostly been using coal and coke (char) as the source of carbon. From a process point of view, the most important role of the carbonaceous material is to react with SiO gas to produce SiC. The ability of the reduction materials to react with SiO gas can be measured and the value is recognized as the reactivity of the carbon source. Reactivity is one of the most important parameters in the smelting process and is commonly acknowledged to strongly affect both productivity and specific energy consumption. The main objectives of this work has been to establish methods to characterize the material properties of fossil carbonaceous reduction materials used in the silicon process and to evaluated how these properties affect the reactivity towards SiO gas. In order to accomplish these objectives, three run of mine (ROM) single seam coals which are particularly well suited for ferroalloy production were selected. Two Carboniferous coals from USA (Blue Gem) and Poland (Staszic) with similar rank, but significantly different composition as well as a Permian coal from Australia (Peak Downs) have been characterized by chemical- and petrographical methods. Blue Gem is a homogeneous coal, low in mineral inclusions and macerals of the inertinite group and determined to have a random vitrinite reflectance of 0.71 %. Staszic has a similar reflectance of vitrinite (0.72 %), but is determined to be a very inhomogeneous coal with both inertinite macerals and minerals embedded in the vitrinite matrix. Peak Downs has a random reflectance of vitrinite of 1.32 % and is hence the coal sample of

  13. Study of Pellets and Lumps as Raw Materials in Silicon Production from Quartz and Silicon Carbide

    Science.gov (United States)

    Dal Martello, E.; Tranell, G.; Gaal, S.; Raaness, O. S.; Tang, K.; Arnberg, L.

    2011-10-01

    The use of high-purity carbon and quartz raw materials reduces the need for comprehensive refining steps after the silicon has been produced carbothermically in the electric reduction furnace. The current work aims at comparing the reaction mechanisms and kinetics occurring in the inner part of the reduction furnace when pellets or lumpy charge is used, as well as the effect of the raw material mix. Laboratory-scale carbothermic reduction experiments have been carried out in an induction furnace. High-purity silicon carbide and two different high-purity hydrothermal quartzes were charged as raw materials at different molar ratios. The charge was in the form of lumps (size, 2-5 mm) or as powder (size, 10-20 μm), mixed and agglomerated as pellets (size, 1-3 mm) and reacted at 2273 K (2000 °C). The thermal properties of the quartzes were measured also by heating a small piece of quartz in CO atmosphere. The investigated quartzes have different reactivity in reducing atmosphere. The carbothermal reduction experiments show differences in the reacted charge between pellets and lumps as charge material. Solid-gas reactions take place from the inside of the pellets porosity, whereas reactions in lumps occur topochemically. Silicon in pellets is produced mainly in the rim zone. Larger volumes of silicon have been found when using lumpy charge. More SiO is produced when using pellets than for lumpy SiO2 for the same molar ratio and heating conditions. The two SiC polytypes used in the carbothermal reduction experiments as carbon reductants presented different reactivity.

  14. Process research on non-CZ silicon material

    Science.gov (United States)

    1982-01-01

    High risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.

  15. High mechanical Q-factor measurements on silicon bulk material

    Energy Technology Data Exchange (ETDEWEB)

    Schwarz, Christian; Nawrodt, Ronny; Heinert, Daniel; Schroeter, Anja; Neubert, Ralf; Thuerk, Matthias; Vodel, Wolfgang; Seidel, Paul [Institut fuer Festkoerperphysik, Helmholtzweg 5, D-07743 Jena (Germany); Tuennermann, Andreas [Institut fuer Angewandte Physik, Albert-Einstein-Strasse 15, D-07745 Jena (Germany)

    2008-07-01

    The direct observation of gravitational waves is one of the biggest challenges in science. Current detectors are limited by different kinds of noise. One of the fundamental noise sources is thermal noise arising from the optical components. One of the most promising attempts to reduce the thermal noise contribution in future detectors will be the use of high Q-factor materials at cryogenic temperatures. Silicon seems to be the most interesting material due to its excellent optical and thermal properties. We present high Q-factor measurements on bulk samples of high purity silicon in a temperature range from 5 to 300 K. The sample dimensions vary between 76.2 mm x 12..75 mm. The Q-factor exceeds 4.10{sup 8} at 6 K. The influence of the crystal orientation, doping and the sample preparation on the Q-factor is discussed.

  16. Recent Advances in Photoelectrochemical Applications of Silicon Materials for Solar-to-Chemicals Conversion.

    Science.gov (United States)

    Zhang, Doudou; Shi, Jingying; Zi, Wei; Wang, Pengpeng; Liu, Shengzhong Frank

    2017-11-23

    Photoelectrochemical (PEC) technology for the conversion of solar energy into chemicals requires cost-effective photoelectrodes to efficiently and stably drive anodic and/or cathodic half-reactions to complete the overall reactions for storing solar energy in chemical bonds. The shared properties among semiconducting photoelectrodes and photovoltaic (PV) materials are light absorption, charge separation, and charge transfer. Earth-abundant silicon materials have been widely applied in the PV industry, and have demonstrated their efficiency as alternative photoabsorbers for photoelectrodes. Many efforts have been made to fabricate silicon photoelectrodes with enhanced performance, and significant progress has been achieved in recent years. Herein, recent developments in crystalline and thin-film silicon-based photoelectrodes (including amorphous, microcrystalline, and nanocrystalline silicon) immersed in aqueous solution for PEC hydrogen production from water splitting are summarized, as well as applications in PEC CO 2 reduction and PEC regeneration of discharged species in redox flow batteries. Silicon is an ideal material for the cost-effective production of solar chemicals through PEC methods. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. THz generation from a nanocrystalline silicon-based photoconductive device

    International Nuclear Information System (INIS)

    Daghestani, N S; Persheyev, S; Cataluna, M A; Rose, M J; Ross, G

    2011-01-01

    Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material

  18. Low-temperature strain gauges based on silicon whiskers

    Directory of Open Access Journals (Sweden)

    Druzhinin A. A.

    2008-08-01

    Full Text Available To create low-temperature strain gauges based on p-type silicon whiskers tensoresistive characteristics of these crystals in 4,2—300 K temperature range were studied. On the basis of p-type Si whiskers with different resistivity the strain gauges for different materials operating at cryogenic temperatures with extremely high gauge factor at 4,2 K were developed, as well as strain gauges operating at liquid helium temperatures in high magnetic fields.

  19. Last Advances in Silicon-Based Optical Biosensors.

    Science.gov (United States)

    Fernández Gavela, Adrián; Grajales García, Daniel; Ramirez, Jhonattan C; Lechuga, Laura M

    2016-02-24

    We review the most important achievements published in the last five years in the field of silicon-based optical biosensors. We focus specially on label-free optical biosensors and their implementation into lab-on-a-chip platforms, with an emphasis on developments demonstrating the capability of the devices for real bioanalytical applications. We report on novel transducers and materials, improvements of existing transducers, new and improved biofunctionalization procedures as well as the prospects for near future commercialization of these technologies.

  20. Novel fabrication of silicon carbide based ceramics for nuclear applications

    Science.gov (United States)

    Singh, Abhishek Kumar

    Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

  1. Silicon-organic pigment material hybrids for photovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Mayer, T.; Weiler, U.; Jaegermann, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstreet 23, D-64287 Darmstadt (Germany); Kelting, C.; Schlettwein, D. [Institute for Applied Physics, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Makarov, S.; Woehrle, D. [Institute of Organic and Macromolecular Chemistry, University Bremen, Leobener Street NW II, D-28359 Bremen (Germany); Abdallah, O.; Kunst, M. [Department Solar Energy, Hahn-Meitner-Institute, D-14109 Berlin (Germany)

    2007-12-14

    Hybrid materials of silicon and organic dyes have been investigated for possible application as photovoltaic material in thin film solar cells. High conversion efficiency is expected from the combination of the advantages of organic dyes for light absorption and those of silicon for charge carrier separation and transport. Low temperature remote hot wire chemical vapor deposition (HWCVD) was developed for microcrystalline silicon ({mu}c-Si) deposition using SiH{sub 4}/H{sub 2} mixtures. As model dyes zinc phthalocyanines have been evaporated from Knudsen type sources. Layers of dye on {mu}c-Si and {mu}c-Si on dye films, and composites of simultaneously and sequentially deposited Si and dye have been prepared and characterized. Raman, absorption, and photoemission spectroscopy prove the stability of the organic molecules against the rough HWCVD-Si process. Transient microwave conductivity (TRMC) indicates good electronic quality of the {mu}c-Si matrix. Energy transfer from dye to Si is indicated indirectly by luminescence and directly by photoconductivity measurements. F{sub x}ZnPc pigments with x=0,4,8,16 have been synthesized, purified and adsorbed onto H-terminated Si(1 1 1) for electronic state line up determination by photoelectron spectroscopy. For x=4 and 8 the dye frontier orbitals line up symmetrically versus the Si energy gap offering similar energetic driving forces for electron and hole injection, which is considered optimum for bulk sensitization and indicates a direction to improve the optoelectronic coupling of the organic dyes to silicon. (author)

  2. Amorphous silicon-based microchannel plates

    International Nuclear Information System (INIS)

    Franco, Andrea; Riesen, Yannick; Wyrsch, Nicolas; Dunand, Sylvain; Powolny, François; Jarron, Pierre; Ballif, Christophe

    2012-01-01

    Microchannel plates (MCP) based on hydrogenated amorphous silicon (a-Si:H) were recently introduced to overcome some of the limitations of crystalline silicon and glass MCP. The typical thickness of a-Si:H based MCPs (AMCP) ranges between 80 and 100 μm and the micromachining of the channels is realized by deep reactive ion etching (DRIE). Advantages and issues regarding the fabrication process are presented and discussed. Electron amplification is demonstrated and analyzed using Electron Beam Induced Current (EBIC) technique. The gain increases as a function of the bias voltage, limited to −340 V on account of high leakage currents across the structure. EBIC maps on 10° tilted samples confirm that the device active area extend to the entire channel opening. AMCP characterization with the electron beam shows gain saturation and signal quenching which depends on the effectiveness of the charge replenishment in the channel walls.

  3. Non-fossil reduction materials in the silicon process - properties and behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Myrhaug, Edin Henrik

    2003-07-01

    The purpose of this work has been to clarify the effect of using biocarbon as a reduction material in the silicon process. It was decided to compare the biocarbon with fossil carbon and find possible differences both on process performance and eventually on product quality. The elements in the raw materials added to the silicon process goes into three different products: silicon metal, silica dust and into open air. Based on analysis of raw materials and of produced silicon metal and microsilica extensive material balances have been established. One important result from these are the distribution factors that indicate how much of the trace elements that goes into each medium. Another result is that the boiling point of an element or a compound gives a good indication of were it ends. A high boiling point indicates that the element ends up in the silicon metal, while a low boiling point indicates that the element goes with off-gas into air. With an intermediate boiling point, the element goes into the silica dust. The SiO-reactivity of the reduction materials are commonly acknowledged to affect strongly the productivity and consumption figures of the silicon process. Based on data from thermogravimetric experiments with chemical reaction between carbonaceous spheres and SiO-gas, kinetic parameters have been estimated from the shrinking core model for some selected reduction materials of various sizes and spanning a wide range of SiO-reactivity figures. This model describes the degree of conversion versus time for a single sphere where the chemical reaction progresses in a topochemical manner from the outer surface of the solid towards the centre forming a porous product layer around an unreacted shrinking core. This behaviour is for the selected reduction materials to a large extent supported by an investigation of cross section pictures of fully and 50% converted spheres obtained with a microprobe. The estimated kinetic parameters obtained from the

  4. Durable crystalline Si photovoltaic modules based on silicone-sheet encapsulants

    Science.gov (United States)

    Hara, Kohjiro; Ohwada, Hiroto; Furihata, Tomoyoshi; Masuda, Atsushi

    2018-02-01

    Crystalline Si photovoltaic (PV) modules were fabricated with sheets of poly(dimethylsiloxane) (silicone) as an encapsulant. The long-term durability of the silicone-encapsulated PV modules was experimentally investigated. The silicone-based modules enhanced the long-term durability against potential-induced degradation (PID) and a damp-heat (DH) condition at 85 °C with 85% relative humidity (RH). In addition, we designed and fabricated substrate-type Si PV modules based on the silicone encapsulant and an Al-alloy plate as the substratum, which demonstrated high impact resistance and high incombustible performance. The high chemical stability, high volume resistivity, rubber-like elasticity, and incombustibility of the silicone encapsulant resulted in the high durability of the modules. Our results indicate that silicone is an attractive encapsulation material, as it improves the long-term durability of crystalline Si PV modules.

  5. Surface wave photonic device based on porous silicon multilayers

    International Nuclear Information System (INIS)

    Guillermain, E.; Lysenko, V.; Benyattou, T.

    2006-01-01

    Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p + -type silicon. Morphological and optical characterizations of the realized structures are reported

  6. Porous silicon-based passivation and gettering in polycrystalline silicon solar cells

    International Nuclear Information System (INIS)

    Dimassi, W.; Bouaiecha, M.; Saadoun, M.; Bessaies, B.; Ezzaouia, H.; Bennaceur, R.

    2002-01-01

    In this work, we report on the effect of introducing a superficial porous silicon (PS) layer on the electrical characteristics of polycrystalline silicon solar cells. The PS layer was formed using a vapour etching (VE)-based method. In addition to its known anti-reflecting action, the forming hydrogen-rich PS layer acts as a passivating agent for the surface of the cell. As a result we found an improvement of the I-V characteristics in dark conditions and AM1 illumination. We show that when the formation of a superficial PS layer is followed by a heat treatment, gettering of impurities from the polycrystalline silicon material is possible. After the removal of the PS layer and the formation of the photovoltaic (PV) structure, we observed an increase of the light-beam-induced-current (LBIC) for treatment temperatures not exceeding 900 deg. C. An improvement of the bulk minority carrier diffusion length and the grain boundary (GB) recombination velocity were observed as the temperature rises, although a global decrease of the LBIC current was observed for temperatures greater than 900 deg. C

  7. Ordered silicon nanostructures for silicon-based photonics devices

    Czech Academy of Sciences Publication Activity Database

    Fojtík, A.; Valenta, J.; Pelant, Ivan; Kálal, M.; Fiala, P.

    2007-01-01

    Roč. 5, Suppl. (2007), S250-S253 ISSN 1671-7694 R&D Projects: GA AV ČR IAA1010316 Grant - others:GA MŠk(CZ) ME 933 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystals * silicon * self-assembled monolayers Subject RIV: BM - Solid Matter Physics ; Magnetism

  8. Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

    Science.gov (United States)

    Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

    2015-09-02

    In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

  9. Characterization of thin-film silicon materials and solar cells through numerical modeling

    NARCIS (Netherlands)

    Pieters, B.E.

    2008-01-01

    At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film

  10. Silicon carbide composites as fusion power reactor structural materials

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L., E-mail: SneadLL@ORNL.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Nozawa, T. [Fusion Research and Development Directorate, Japan Atomic Energy Agency, 2-4 Shirakata Shirane, Tokai, Ibaraki 319-1195 (Japan); Ferraris, M. [Politecnico di Torino-DISMIC c. Duca degli Abruzzi, 24I-10129 Torino (Italy); Katoh, Y. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Shinavski, R. [Hypertherm HTC, 18411 Gothard St., Units A/B/C, Huntington Beach, CA 92648 (United States); Sawan, M. [University of Wisconsin, Madison 417 Engineering Research Building, 1500 Engineering Drive Madison, WI 53706-1687 (United States)

    2011-10-01

    Silicon carbide was first proposed as a low activation fusion reactor material in the mid 1970s. However, serious development of this material did not begin until the early 1990s, driven by the emergence of composite materials that provided enhanced toughness and an implied ability to use these typically brittle materials in engineering application. In the decades that followed, SiC composite system was successfully transformed from a poorly performing curiosity into a radiation stable material of sufficient maturity to be considered for near term nuclear and non-nuclear systems. In this paper the recent progress in the understanding and of basic phenomenon related to the use of SiC and SiC composite in fusion applications will be presented. This work includes both fundamental radiation effects in SiC and engineering issues such as joining and general materials properties. Additionally, this paper will briefly discuss the technological gaps remaining for the practical application of this material system in fusion power devices such as DEMO and beyond.

  11. Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

    Science.gov (United States)

    Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

    2018-01-01

    The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

  12. Final report. Fabrication of silicon carbide/silicon nitride nanocomposite materials and characterization of their performance; Herstellung von Siliciumcarbid/Siliciumnitrid-Nanocomposite-Werkstoffen und Charakterisierung ihrer Leistungsfaehigkeit. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Westerheide, R.; Woetting, G.; Schmitz, H.W.

    1998-07-01

    The presented activities were initiated by the well known publications of Niihara and Ishizaki. There, the strengthening and toughening of silicon nitride by nanoscaled silicon carbide particles are described. Both authors have used expensive powder production routes to achieve the optimum mechanical properties. However, for a commercial purpose these routes are not applicable due to their high cost and low reproducibility. The production route chosen by H.C. Starck together with CFI and the Fraunhofer-Institute is a powder synthesis based on the carbothermal reaction of silicon nitride as a low cost synthesis method. The investigations were performed for materials made from synthesis powders and other reference materials. The materials were densified with relatively high amounts of conventional sintering additives by gas pressure sintering. It is shown, that the postulated maxima of strength and fracture toughness behaviour at room temperature with maxima at about 5% to 25% nanoscaled SiC cannot be achieved. However, the mechanical high temperature material behaviour is as good as the behaviour of highly developed silicon nitride materials, which are produced by HIP or by consequent minimisation of the additive content with the well known difficulties to densify these materials. An overview will be given here on the powder production route and their specific problems, the mechanical properties, the microstructure and the possible effects of the microstructure, which result in an improvement of the creep resistance. (orig.)

  13. Thermally-isolated silicon-based integrated circuits and related methods

    Science.gov (United States)

    Wojciechowski, Kenneth; Olsson, Roy H.; Clews, Peggy J.; Bauer, Todd

    2017-05-09

    Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

  14. Method of making thermally-isolated silicon-based integrated circuits

    Science.gov (United States)

    Wojciechowski, Kenneth; Olsson, Roy; Clews, Peggy J.; Bauer, Todd

    2017-11-21

    Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

  15. Mechanical engineering and design of silicon-based particle tracking devices

    International Nuclear Information System (INIS)

    Miller, W.O.; Thompson, T.C.; Gamble, M.T.; Reid, R.S.; Woloshun, K.A.; Dransfield, G.D.; Ziock, H.J.

    1990-01-01

    The Mechanical Engineering and Electronics Division of the Los Alamos National Laboratory has been investigating silicon-based particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, thermal, and materials issues have been addressed. This paper discussed detector structural integrity and stability, including detailed finite element models of the silicon chip support and predictive methods used in designing with advanced composite materials. Electronic thermal loading and efficient dissipation of such energy using heat pipe technology has been investigated. The use of materials whose coefficients of thermal expansion are engineered to match silicon or to be near zero, as appropriate, have been explored. Material analysis and test results from radiation, chemical, and static loading are compared with analytical predictions and discussed. 1 ref., 2 figs., 1 tab

  16. Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system /development of technology to manufacture solar cells/development of technology to manufacture thin film solar cells (development of technology to manufacture materials and substrates (development of technology to manufacture silicon crystal based high-quality materials and substrates)); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyo denchi seizo gijutsu kaihatsu, usumaku taiyo denchi seizo gijutsu kaihatsu, zairyo kiban seizo gijutsu kaihatsu (silicon kesshokei kohinshitsu zairyo kiban no seizo gujutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    It is intended to develop thin film solar cells capable of mass production with high photo-stability and at low cost. Thus, the objective of the present research is to analyze the growth process of micro crystal silicon based thin films, the crystal being a high quality silicon crystal based material, and develop technology to manufacture high-quality micro crystal silicon thin films based on the findings therefrom. It was found that, when silicon source is available in cathode, pure hydrogen plasma forms micro crystal silicon films by using the plasma as a result of the chemical transportation effect from the silicon source. It was revealed that the crystal formation due to hydrogen plasma exposure is performed substantially by the crystals forming the films due to the chemical transportation effect, rather than crystallization in the vicinity of the surface. The crystal formation under this experiment was concluded that the formation takes place during film growth accompanied by diffusion of film forming precursors on the surface on which the film grows. According to the result obtained so far, the most important issue in the future is particularly the control of crystal growing azimuth by reducing the initially formed amorphous layer by controlling the stress in the initial phase for film formation, and by controlling the film forming precursors. (NEDO)

  17. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

    International Nuclear Information System (INIS)

    Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

    1997-12-01

    Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

  18. Process research of non-Czochralski silicon material

    Science.gov (United States)

    Campbell, R. B.

    1986-01-01

    Simultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.

  19. Resistivity measurements on the neutron irradiated detector grade silicon materials

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zheng

    1993-11-01

    Resistivity measurements under the condition of no or low electrical field (electrical neutral bulk or ENB condition) have been made on various device configurations on detector grade silicon materials after neutron irradiation. Results of the measurements have shown that the ENB resistivity increases with neutron fluence ({Phi}{sub n}) at low {phi}{sub n} (<10{sup 13} n/cm{sup 2}) and saturates at a value between 300 and 400 k{Omega}-cm at {phi}{sub n} {approximately}10{sup 13} n/cm{sup 2}. Meanwhile, the effective doping concentration N{sub eff} in the space charge region (SCR) obtained from the C-V measurements of fully depleted p{sup +}/n silicon junction detectors has been found to increase nearly linearly with {phi}{sub n} at high fluences ({phi}{sub n} > 10{sup 13} n/cm{sup 2}). The experimental results are explained by the deep levels crossing the Fermi level in the SCR and near perfect compensation in the ENB by all deep levels, resulting in N{sub eff} (SCR) {ne} n or p (free carrier concentrations in the ENB).

  20. Silicone-Based Triboelectric Nanogenerator for Water Wave Energy Harvesting.

    Science.gov (United States)

    Xiao, Tian Xiao; Jiang, Tao; Zhu, Jian Xiong; Liang, Xi; Xu, Liang; Shao, Jia Jia; Zhang, Chun Lei; Wang, Jie; Wang, Zhong Lin

    2018-01-31

    Triboelectric nanogenerator (TENG) has been proven to be efficient for harvesting water wave energy, which is one of the most promising renewable energy sources. In this work, a TENG with a silicone rubber/carbon black composite electrode was designed for converting the water wave energy into electricity. The silicone-based electrode with a soft texture provides a better contact with the dielectric film. Furthermore, a spring structure is introduced to transform low-frequency water wave motions into high-frequency vibrations. They together improve the output performance and efficiency of TENG. The output performances of TENGs are further enhanced by optimizing the triboelectric material pair and tribo-surface area. A spring-assisted TENG device with the segmented silicone rubber-based electrode structure was sealed into a waterproof box, which delivers a maximum power density of 2.40 W m -3 , as triggered by the water waves. The present work provides a new strategy for fabricating high-performance TENG devices by coupling flexible electrodes and spring structure for harvesting water wave energy.

  1. Last Advances in Silicon-Based Optical Biosensors

    Directory of Open Access Journals (Sweden)

    Adrián Fernández Gavela

    2016-02-01

    Full Text Available We review the most important achievements published in the last five years in the field of silicon-based optical biosensors. We focus specially on label-free optical biosensors and their implementation into lab-on-a-chip platforms, with an emphasis on developments demonstrating the capability of the devices for real bioanalytical applications. We report on novel transducers and materials, improvements of existing transducers, new and improved biofunctionalization procedures as well as the prospects for near future commercialization of these technologies.

  2. Additive Manufacturing of Overhang Structures Using Moisture-Cured Silicone with Support Material

    Directory of Open Access Journals (Sweden)

    Mohan Muthusamy

    2018-04-01

    Full Text Available Additive manufacturing (AM of soft materials has a wide variety of applications, such as customized or wearable devices. Silicone is one popular material for these applications given its favorable material properties. However, AM of silicone parts with overhang structures remains challenging due to the soft nature of the material. Overhang structures are the areas where there is no underlying structure. Typically, a support material is used and built in the underlying space so that the overhang structures can be built upon it. Currently, there is no support structure that has been used for AM of silicone. The goal of this study is to develop an AM process to fabricate silicone parts with overhang structures. We first identified and confirmed poly-vinyl alcohol (PVA, a water-soluble material, as a suitable support material for silicone by evaluating the adhesion strength between silicone and PVA. Process parameters for the support material, including critical overhang angle and minimum infill density for the support material, are identified. However, overhang angle alone is not the only determining factor for support material. As silicone is a soft material, it deflects due to its own weight when the height of the overhang structure increases. A finite element model is developed to estimate the critical overhang height paired with different overhang angles to determine whether the use of support material is needed. Finally, parts with overhang structures are printed to demonstrate the capability of the developed process.

  3. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    International Nuclear Information System (INIS)

    Kaminski, Yelena; Shauly, Eitan; Paz, Yaron

    2015-01-01

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect

  4. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    Energy Technology Data Exchange (ETDEWEB)

    Kaminski, Yelena [Department of Chemical Engineering, Technion, Haifa (Israel); TowerJazz Ltd. Migdal Haemek (Israel); Shauly, Eitan [TowerJazz Ltd. Migdal Haemek (Israel); Paz, Yaron, E-mail: paz@tx.technion.ac.il [Department of Chemical Engineering, Technion, Haifa (Israel)

    2015-12-07

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.

  5. Synthesis and study of novel silicon-based unsaturated polymers

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Jibing [Iowa State Univ., Ames, IA (United States)

    1995-06-19

    Novel unsaturated polymers have been synthesized and studied as precursors to silicon carbide and third order nonlinear optical materials. X ray structures were obtained. Kinetic and mechanistic studies of the unique thermal isomerization of dimethylenedisilacyclobutane to a carbene were conducted.

  6. Silicon Based Direct Methanol Fuel Cells

    DEFF Research Database (Denmark)

    Larsen, Jackie Vincent

    The purpose of this project has been to investigate and fabricate small scale Micro Direct Methanol Fuel Cells (μDMFC). They are investigated as a possible alternative for Zinc-air batteries in small size consumer devices such as hearing aids. In such devices the conventional rechargeable batteries...... such as lithium-ion batteries have insufficiently low energy density. Methanol is a promising fuel for such devices due to the high energy density and ease of refueling compared to charging batteries, making μDMFC a suitable replacement energy source. In this Ph.D. dissertation, silicon micro fabrication...... techniques where utilized to build μDMFCs with the purpose of engineering the structures, both on the micro and nano scales in order to realize a high level of control over the membrane and catalyst components. The work presents four different monolithic fuel cell designs. The primary design is based...

  7. Characterization of silicon- and carbon-based composite anodes for lithium-ion batteries

    International Nuclear Information System (INIS)

    Khomenko, Volodymyr G.; Barsukov, Viacheslav Z.

    2007-01-01

    In recent years development of active materials for negative electrodes has been of great interest. Special attention has been focused on the active materials possessing higher reversible capacity than that of conventional graphite. In the present work the electrochemical performance of some carbon/silicon-based materials has been analyzed. For this purpose various silicon-based composites were prepared using such carbon materials as graphite, hard carbon and graphitized carbon black. An analysis of charging-discharging processes at electrodes based on different carbon materials has shown that graphite modified with silicon is the most promising anode material. It has also been revealed that the irreversible capacity mainly depends on the content of Si. An optimum content of Si has been determined with taking into account that high irreversible capacity is not suitable for practical application in lithium-ion batteries. This content falls within the range of 8-10 wt%. The reversible capacity of graphite modified with 8 wt% carbon-coated Si was as high as 604 mAh g -1 . The irreversible capacity loss with this material was as low as 8.1%. The small irreversible capacity of the material allowed developing full lithium-ion rechargeable cells in the 2016 coin cell configuration. Lithium-ion batteries based on graphite modified with silicon show gravimetric and volumetric specific energy densities which are higher by approximately 20% than those for a lithium-ion battery based on natural graphite

  8. Silicon-based metallic micro grid for electron field emission

    International Nuclear Information System (INIS)

    Kim, Jaehong; Jeon, Seok-Gy; Kim, Jung-Il; Kim, Geun-Ju; Heo, Duchang; Shin, Dong Hoon; Sun, Yuning; Lee, Cheol Jin

    2012-01-01

    A micro-scale metal grid based on a silicon frame for application to electron field emission devices is introduced and experimentally demonstrated. A silicon lattice containing aperture holes with an area of 80 × 80 µm 2 and a thickness of 10 µm is precisely manufactured by dry etching the silicon on one side of a double-polished silicon wafer and by wet etching the opposite side. Because a silicon lattice is more rigid than a pure metal lattice, a thin layer of Au/Ti deposited on the silicon lattice for voltage application can be more resistant to the geometric stress caused by the applied electric field. The micro-fabrication process, the images of the fabricated grid with 88% geometric transparency and the surface profile measurement after thermal feasibility testing up to 700 °C are presented. (paper)

  9. Dielectric elastomers, with very high dielectric permittivity, based on silicone and ionic interpenetrating networks

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Hvilsted, Søren

    2015-01-01

    permittivity and the Young's modulus of the elastomer. One system that potentially achieves this involves interpenetrating polymer networks (IPNs), based on commercial silicone elastomers and ionic networks from amino- and carboxylic acid-functional silicones. The applicability of these materials as DEs...... are obtained while dielectric breakdown strength and Young's modulus are not compromised. These good overall properties stem from the softening effect and very high permittivity of ionic networks – as high as ε′ = 7500 at 0.1 Hz – while the silicone elastomer part of the IPN provides mechanical integrity...

  10. Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes; Summary Discussion Sessions

    International Nuclear Information System (INIS)

    Sopori, B.; Swanson, D.; Sinton, R.; Stavola, M.; Tan, T.

    1998-01-01

    This report is a summary of the panel discussions included with the Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme of the workshop was ''Supporting the Transition to World Class Manufacturing.'' This workshop provided a forum for an informal exchange of information between researchers in the photovoltaic and nonphotovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helped establish a knowledge base that can be used for improving device-fabrication processes to enhance solar-cell performance and reduce cell costs. It also provided an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research

  11. A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

    Directory of Open Access Journals (Sweden)

    Thi Dep Ha

    2016-04-01

    Full Text Available Phononic crystals (PnCs and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1 a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2 influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

  12. A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Thi Dep, E-mail: hathidep@yahoo.com [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China); Faculty of Electronic Technology, Industrial University of Ho Chi Minh City, Hochiminh City (Viet Nam); Bao, JingFu, E-mail: baojingfu@uestc.edu.cn [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China)

    2016-04-15

    Phononic crystals (PnCs) and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q) as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1) a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2) influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps) compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

  13. A silicon-based electrical source for surface plasmon polaritons

    NARCIS (Netherlands)

    Walters, Robert J.; van Loon, Rob V.A.; Brunets, I.; Schmitz, Jurriaan; Polman, Albert

    2009-01-01

    This work demonstrates the fabrication of a silicon-based electrical source for surface plasmon polaritons (SPPs) at low temperatures using silicon nanocrystal doped alumina within a metal-insulator-metal (MIM) waveguide geometry. The fabrication method uses established microtechnology processes

  14. Research and Application Progress of Silicone Rubber Materials in Aviation

    Directory of Open Access Journals (Sweden)

    HUANG Yanhua

    2016-06-01

    Full Text Available The research progress of heat resistance, cold resistance, electrical conductivity and damping properties of aviation silicone rubber were reviewed in this article. The heat resistance properties of silicone rubber can be enhanced by changing the molecular structure (main chain, end-group, side chain and molecular weight of the gum and adding special heat-resistance filler. The cold resistance of aviation silicone rubber can be enhanced by adjusting the side chain molecular structure of the gum and the content of different gum chain. The electrical conductivity of silicone rubber can be improved by optimizing, blending and dispersing of conductive particles. The damping property of silicone rubber can be improved by designing and synthesizing of high-molecular polysiloxane damping agent. Furthermore, the application of aviation silicone rubber used in high-low temperature seal, electrical conduction and vibration damping technology are also summarized, and the high performance (for example long-term high temperature resistance, ultralow temperature resistance, high electromagnetic shelding, long-term fatigue resistance vibration damping, quasi constant modulus and so on of special silicone rubber is the future direction of aviation silicone rubber.

  15. Hybrid Integrated Silicon Microfluidic Platform for Fluorescence Based Biodetection

    Directory of Open Access Journals (Sweden)

    André Darveau

    2007-09-01

    Full Text Available The desideratum to develop a fully integrated Lab-on-a-chip device capable ofrapid specimen detection for high throughput in-situ biomedical diagnoses and Point-of-Care testing applications has called for the integration of some of the novel technologiessuch as the microfluidics, microphotonics, immunoproteomics and Micro ElectroMechanical Systems (MEMS. In the present work, a silicon based microfluidic device hasbeen developed for carrying out fluorescence based immunoassay. By hybrid attachment ofthe microfluidic device with a Spectrometer-on-chip, the feasibility of synthesizing anintegrated Lab-on-a-chip type device for fluorescence based biosensing has beendemonstrated. Biodetection using the microfluidic device has been carried out usingantigen sheep IgG and Alexafluor-647 tagged antibody particles and the experimentalresults prove that silicon is a compatible material for the present application given thevarious advantages it offers such as cost-effectiveness, ease of bulk microfabrication,superior surface affinity to biomolecules, ease of disposability of the device etc., and is thussuitable for fabricating Lab-on-a-chip type devices.

  16. Silicon carbide and its use as a radiation detector material

    International Nuclear Information System (INIS)

    Nava, F; Bertuccio, G; Cavallini, A; Vittone, E

    2008-01-01

    We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented. The most recent data on charge transport parameters across the Schottky barrier and how these are related to radiation spectrometer performance are presented. Experimental results on pixel detectors having equivalent noise energies of 144 eV FWHM (7.8 electrons rms) and 196 eV FWHM at +27 °C and +100 °C, respectively, are reported. Results of studying the radiation resistance of 4H–SiC are analysed. The data on the ionization energies, capture cross section, deep-level centre concentrations and their plausible structures formed in SiC as a result of irradiation with various particles are reviewed. The emphasis is placed on the study of the 1 MeV neutron irradiation, since these thermal particles seem to play the main role in the detector degradation. An accurate electrical characterization of the induced deep-level centres by means of PICTS technique has allowed one to identify which play the main role in the detector degradation. (topical review)

  17. A study on the development of silicon carbide materials for nuclear application

    International Nuclear Information System (INIS)

    Won, Dong Yeon; Kim, Chan Jung; Lee, Jae Choon; Kim, Joon Hyung; Lim, Kyung Soo; Kim, Ki Baik

    1987-12-01

    Silicon carbide was synthesized by reaction sintering process from carbon and silicon powders as starting materials. The effects of two processing parameters, i.e., heat treatment time and temperature, were examined (to characterize the reaction sintering process) in terms of the degree of reaction and phase developed during heat treatment. The final products after reaction of silicon and carbon powders were identified as β-SiC having ZnS crystal structure. Sintering of cordierite ceramics which was used as an high temperature inorganic binder to fabricate ceramically bound silicon carbide, and phase identification of the sintered ceramics by X-ray powder diffraction techniques. (Author)

  18. Silicon carbide optics for space and ground based astronomical telescopes

    Science.gov (United States)

    Robichaud, Joseph; Sampath, Deepak; Wainer, Chris; Schwartz, Jay; Peton, Craig; Mix, Steve; Heller, Court

    2012-09-01

    Silicon Carbide (SiC) optical materials are being applied widely for both space based and ground based optical telescopes. The material provides a superior weight to stiffness ratio, which is an important metric for the design and fabrication of lightweight space telescopes. The material also has superior thermal properties with a low coefficient of thermal expansion, and a high thermal conductivity. The thermal properties advantages are important for both space based and ground based systems, which typically need to operate under stressing thermal conditions. The paper will review L-3 Integrated Optical Systems - SSG’s (L-3 SSG) work in developing SiC optics and SiC optical systems for astronomical observing systems. L-3 SSG has been fielding SiC optical components and systems for over 25 years. Space systems described will emphasize the recently launched Long Range Reconnaissance Imager (LORRI) developed for JHU-APL and NASA-GSFC. Review of ground based applications of SiC will include supporting L-3 IOS-Brashear’s current contract to provide the 0.65 meter diameter, aspheric SiC secondary mirror for the Advanced Technology Solar Telescope (ATST).

  19. Silicon-germanium and platinum silicide nanostructures for silicon based photonics

    Science.gov (United States)

    Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

    2017-05-01

    This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

  20. LDEF materials data bases

    Science.gov (United States)

    Funk, Joan G.; Strickland, John W.; Davis, John M.

    1993-01-01

    The Long Duration Exposure Facility (LDEF) and the accompanying experiments were composed of and contained a wide variety of materials representing the largest collection of materials flown in low Earth orbit (LEO) and retrieved for ground based analysis to date. The results and implications of the mechanical, thermal, optical, and electrical data from these materials are the foundation on which future LEO space missions will be built. The LDEF Materials Special Investigation Group (MSIG) has been charged with establishing and developing data bases to document these materials and their performance to assure not only that the data are archived for future generations but also that the data are available to the spacecraft user community in an easily accessed, user-friendly form. This paper discusses the format and content of the three data bases developed or being developed to accomplish this task. The hardware and software requirements for each of these three data bases are discussed along with current availability of the data bases. This paper also serves as a user's guide to the MAPTIS LDEF Materials Data Base.

  1. Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon.

    Science.gov (United States)

    Bandarenka, Hanna V; Girel, Kseniya V; Zavatski, Sergey A; Panarin, Andrei; Terekhov, Sergei N

    2018-05-21

    The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

  2. Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon

    Directory of Open Access Journals (Sweden)

    Hanna V. Bandarenka

    2018-05-01

    Full Text Available The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs, and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

  3. Bioactive silicon nitride: A new therapeutic material for osteoarthropathy

    Science.gov (United States)

    Pezzotti, Giuseppe; Marin, Elia; Adachi, Tetsuya; Rondinella, Alfredo; Boschetto, Francesco; Zhu, Wenliang; Sugano, Nobuhiko; Bock, Ryan M.; McEntire, Bryan; Bal, Sonny B.

    2017-03-01

    While the reciprocity between bioceramics and living cells is complex, it is principally governed by the implant’s surface chemistry. Consequently, a deeper understanding of the chemical interactions of bioceramics with living tissue could ultimately lead to new therapeutic strategies. However, the physical and chemical principles that govern these interactions remain unclear. The intricacies of this biological synergy are explored within this paper by examining the peculiar surface chemistry of a relatively new bioceramic, silicon nitride (Si3N4). Building upon prior research, this paper aims at obtaining new insights into the biological interactions between Si3N4 and living cells, as a consequence of the off-stoichiometric chemical nature of its surface at the nanometer scale. We show here yet unveiled details of surface chemistry and, based on these new data, formulate a model on how, ultimately, Si3N4 influences cellular signal transduction functions and differentiation mechanisms. In other words, we interpret its reciprocity with living cells in chemical terms. These new findings suggest that Si3N4 might provide unique new medicinal therapies and effective remedies for various bone or joint maladies and diseases.

  4. Stretchable and foldable silicon-based electronics

    KAUST Repository

    Cavazos Sepulveda, Adrian Cesar

    2017-03-30

    Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

  5. Stretchable and foldable silicon-based electronics

    KAUST Repository

    Cavazos Sepulveda, Adrian Cesar; Diaz Cordero, M. S.; Carreno, Armando Arpys Arevalo; Nassar, Joanna M.; Hussain, Muhammad Mustafa

    2017-01-01

    Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

  6. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    CERN Document Server

    Czapski, M; Tardivat, C; Stora, T; Bouville, F; Leloup, J; Luis, R Fernandes; Augusto, R Santos

    2013-01-01

    New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLORA codes. (C) 2013 Elsevier B.V. All rights reserved.

  7. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    Science.gov (United States)

    Czapski, M.; Stora, T.; Tardivat, C.; Deville, S.; Santos Augusto, R.; Leloup, J.; Bouville, F.; Fernandes Luis, R.

    2013-12-01

    New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

  8. Material and Energy Flows Associated with Select Metals in GREET 2. Molybdenum, Platinum, Zinc, Nickel, Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Benavides, Pahola T. [Argonne National Lab. (ANL), Argonne, IL (United States); Dai, Qiang [Argonne National Lab. (ANL), Argonne, IL (United States); Sullivan, John L. [Argonne National Lab. (ANL), Argonne, IL (United States); Kelly, Jarod C. [Argonne National Lab. (ANL), Argonne, IL (United States); Dunn, Jennifer B. [Argonne National Lab. (ANL), Argonne, IL (United States)

    2015-09-01

    In this work, we analyzed the material and energy consumption from mining to production of molybdenum, platinum, zinc, and nickel. We also analyzed the production of solar- and semiconductor-grade silicon. We described new additions to and expansions of the data in GREET 2. In some cases, we used operating permits and sustainability reports to estimate the material and energy flows for molybdenum, platinum, and nickel, while for zinc and silicon we relied on information provided in the literature.

  9. Supramolecular fluorene based materials

    OpenAIRE

    Abbel, R.J.

    2008-01-01

    This thesis describes the use of noncovalent interactions in order to manipulate and control the self-assembly and morphology of electroactive fluorene-based materials. The supramolecular arrangement of p-conjugated polymers and oligomers can strongly influence their electronic and photophysical properties. Therefore, a detailed understanding of such organisation processes is essential for the optimisation of the performance of these materials as applied in optoelectronic devices. In order to...

  10. Graphene synthesized on porous silicon for active electrode material of supercapacitors

    Science.gov (United States)

    Su, B. B.; Chen, X. Y.; Halvorsen, E.

    2016-11-01

    We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm2 while that without catalyst layer was 145μF/cm2. We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors.

  11. Graphene synthesized on porous silicon for active electrode material of supercapacitors

    International Nuclear Information System (INIS)

    Su, B B; Chen, X Y; Halvorsen, E

    2016-01-01

    We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm 2 while that without catalyst layer was 145μF/cm 2 . We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors. (paper)

  12. Review of New Technology for Preparing Crystalline Silicon Solar Cell Materials by Metallurgical Method

    Science.gov (United States)

    Li, Man; Dai, Yongnian; Ma, Wenhui; Yang, Bin; Chu, Qingmei

    2017-11-01

    The goals of greatly reducing the photovoltaic power cost and making it less than that of thermal power to realize photovoltaic power grid parity without state subsidies are focused on in this paper. The research status, key technologies and development of the new technology for preparing crystalline silicon solar cell materials by metallurgical method at home and abroad are reviewed. The important effects of impurities and defects in crystalline silicon on its properties are analysed. The importance of new technology on reducing production costs and improving its quality to increase the cell conversion efficiency are emphasized. The previous research results show that the raw materials of crystalline silicon are extremely abundant. The product of crystalline silicon can meet the quality requirements of solar cell materials: Si ≥ 6 N, P 1 Ω cm, minority carrier life > 25 μs cell conversion efficiency of about 19.3%, the product costs energy consumption energy consumption, low carbon and sustainable development are prospected.

  13. Silicon integrated circuits advances in materials and device research

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, an

  14. Application of neutron transmutation doping method to initially p-type silicon material.

    Science.gov (United States)

    Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

    2009-01-01

    The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

  15. Microstructural Characterization of Reaction-Formed Silicon Carbide Ceramics. Materials Characterization

    Science.gov (United States)

    Singh, M.; Leonhardt, T. A.

    1995-01-01

    Microstructural characterization of two reaction-formed silicon carbide ceramics has been carried out by interference layering, plasma etching, and microscopy. These specimens contained free silicon and niobium disilicide as minor phases with silicon carbide as the major phase. In conventionally prepared samples, the niobium disilicide cannot be distinguished from silicon in optical micrographs. After interference layering, all phases are clearly distinguishable. Back scattered electron (BSE) imaging and energy dispersive spectrometry (EDS) confirmed the results obtained by interference layering. Plasma etching with CF4 plus 4% O2 selectively attacks silicon in these specimens. It is demonstrated that interference layering and plasma etching are very useful techniques in the phase identification and microstructural characterization of multiphase ceramic materials.

  16. Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

    International Nuclear Information System (INIS)

    Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

    2000-01-01

    Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

  17. Double side multicrystalline silicon passivation by one step stain etching-based porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mohamed, Seifeddine Belhadj; Ben Rabha, Mohamed; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2012-10-15

    In this paper, we investigate the effect of stain etching-based porous silicon on the double side multicrystalline silicon. Special attention is given to the use of the stain etched PS as an antireflection coating as well as for surface passivating capabilities. Stain etching of double side multicrystalline silicon leads to the formation of PS nanostructures, that dramatically decrease the surface reflectivity from 30% to about 7% and increase the effective lifetime from 1 {mu}s to 10 {mu}s at a minority carrier density ({Delta}n) of 10{sup 15} cm{sup -3}. These results let us correlate the rise of the lifetime values to the photoluminescence intensity to the hydrogen and oxide passivation as shown by FTIR analysis. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Hydrogen interactions with silicon-on-insulator materials

    NARCIS (Netherlands)

    Rivera de Mena, A.J.

    2003-01-01

    The booming of microelectronics in recent decades has been made possible by the excellent properties of the Si/SiO2 interface in oxide on silicon systems.. This semiconductor/insulator combination has proven to be of great value for the semiconductor industry. It has made it possible to continuously

  19. Plasmonic silicon solar cells : Impact of material quality and geometry

    NARCIS (Netherlands)

    Pahud, C.; Isabella, O.; Naqavi, A.; Haug, F.J.; Zeman, M.; Herzig, H.P.; Ballif, C.

    2013-01-01

    We study n-i-p amorphous silicon solar cells with light-scattering nanoparticles in the back reflector. In one configuration, the particles are fully embedded in the zinc oxide buffer layer; In a second configuration, the particles are placed between the buffer layer and the flat back electrode. We

  20. Supramolecular fluorene based materials

    NARCIS (Netherlands)

    Abbel, R.J.

    2008-01-01

    This thesis describes the use of noncovalent interactions in order to manipulate and control the self-assembly and morphology of electroactive fluorene-based materials. The supramolecular arrangement of p-conjugated polymers and oligomers can strongly influence their electronic and photophysical

  1. Contactless Spectral-dependent Charge Carrier Lifetime Measurements in Silicon Photovoltaic Materials

    Science.gov (United States)

    Roller, John; Hamadani, Behrang; Dagenais, Mario

    Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in completed solar cells. In this work, carrier lifetimes in PV-grade silicon wafers are obtained by way of quasi-steady state photoconductance measurements. These measurements use a contactless RF system coupled with varying narrow spectrum input LEDs, ranging in wavelength from 460 nm to 1030 nm. Spectral dependent lifetime measurements allow for determination of bulk and surface properties of the material, including the intrinsic bulk lifetime and the surface recombination velocity. The effective lifetimes are fit to an analytical physics-based model to determine the desired parameters. Passivated and non-passivated samples are both studied and are shown to have good agreement with the theoretical model.

  2. Charge transfer processes in hybrid solar cells composed of amorphous silicon and organic materials

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Sebastian; Neher, Dieter [Universitaet Potsdam, Inst. Physik u. Astronomie, Karl-Liebknecht-Strasse 24/25, 14467 Potsdam-Golm (Germany); Schulze, Tim; Korte, Lars [Helmholtz Zentrum Berlin, Inst. fuer Silizium Photovoltaik, Kekulestrasse 5, 12489 Berlin (Germany)

    2011-07-01

    The efficiency of hybrid solar cells composed of organic materials and amorphous hydrogenated silicon (a-Si:H) strongly depends upon the efficiency of charge transfer processes at the inorganic-organic interface. We investigated the performance of devices comprising an ITO/a-Si:H(n-type)/a-Si:H(intrinsic)/organic/metal multilayer structure and using two different organic components: zinc phthalocyanine (ZnPc) and poly(3-hexylthiophene) (P3HT). The results show higher power conversion- and quantum efficiencies for the P3HT based cells, compared to ZnPc. This can be explained by larger energy-level offset at the interface between the organic layer and a-Si:H, which facilitates hole transfer from occupied states in the valence band tail to the HOMO of the organic material and additionally promotes exciton splitting. The performance of the a-Si:H/P3HT cells can be further improved by treatment of the amorphous silicon surface with hydrofluoric acid (HF) and p-type doping of P3HT with F4TCNQ. The improved cells reached maximum power conversion efficiencies of 1%.

  3. Progress in Studies on Carbon and Silicon Carbide Nanocomposite Materials

    International Nuclear Information System (INIS)

    Xiao, P.; Chen, J.; Xian-feng, X.

    2010-01-01

    Silicon carbide nanofiber and carbon nanotubes are introduced. The structure and application of nanotubers (nanofibers) in carbon/carbon composites are emphatically presented. Due to the unique structure of nanotubers (nanofibers), they can modify the microstructure of pyrocarbon and induce the deposition of pyrocarbon with high text in carbon/carbon composites. So the carbon/carbon composites modified by CNT/CNF have more excellent properties.

  4. An FPGA-based silicon neuronal network with selectable excitability silicon neurons

    Directory of Open Access Journals (Sweden)

    Jing eLi

    2012-12-01

    Full Text Available This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN and the transmitter release based silicon synapse, allow the network to show rich dynamic behaviors and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with $256$ full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs.

  5. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    Energy Technology Data Exchange (ETDEWEB)

    Ghulinyan, M., E-mail: ghulinyan@fbk.eu [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Bernard, M.; Bartali, R. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Deptartment of Physics, University of Trento, I-38123 Povo (Italy); Pucker, G. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy)

    2015-12-30

    Highlights: • Photoresist adhesion induces the formation of complex etch profiles in dielectrics. • Hydrofluoric acid etching of silica glass and silicon nitride materials was studied. • The phenomenon has been modeled in analogy with sonic boom propagation. • The material etch rate and resist adhesion/erosion define the final profile. - Abstract: In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  6. Effect of porous silicon on the performances of silicon solar cells during the porous silicon-based gettering procedure

    Energy Technology Data Exchange (ETDEWEB)

    Nouri, H.; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Bouaicha, M. [Laboratoire de Photovoltaique, des Semi-conducteurs et des Nanostructures, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2009-10-15

    In this work we analyse the effect of porous silicon on the performances of multicrystalline silicon (mc-Si) solar cells during the porous silicon-based gettering procedure. This procedure consists of forming PS layers on both front and back sides of the mc-Si wafers followed by an annealing in an infrared furnace under a controlled atmosphere at different temperatures. Three sets of samples (A, B and C) have been prepared; for samples A and B, the PS films were removed before and after annealing, respectively. In order to optimize the annealing temperature, we measure the defect density at a selected grain boundary (GB) using the dark current-voltage (I-V) characteristics across the GB itself. The annealing temperature was optimized to 1000 C. The effect of these treatments on the performances of mc-Si solar cells was studied by means of the current-voltage characteristic (at AM 1.5) and the internal quantum efficiency (IQE). The results obtained for cell A and cell B were compared to those obtained on a reference cell (C). (author)

  7. Silicon-based tracking system: Mechanical engineering and design

    International Nuclear Information System (INIS)

    Miller, W.O.; Gamble, M.T.; Thompson, T.C.; Woloshun, K.A.; Reid, R.S.; Hanlon, J.A.; Michaud, F.D.; Dransfield, G.D.; Ziock, H.J.; Palounek, A.P.

    1992-01-01

    The Silicon Tracking System (STS) is composed of silicon strip detectors arranged by both in a cylindrical array and an array of flat panels about the interaction region. The cylindrical array is denoted the central region and the flat panel arrays, which are normal to the beam axis, we denoted the forward regions. The overall length of the silicon array is 5.16 m and the maximum diameter is 0.93 m. The Silicon Tracking System Conceptual Design Report, should be consulted for the body of analysis performed to quantify the present design concept. For the STS to achieve its physics goals, the mechanical structures and services must support 17 m 2 of silicon detectors and stabilize their positions to within 5 μm, uniformly cool the detector the system to O degrees C and at the same time potentially remove up to 13 kW of waste heat generated by the detector electronics, provide up to 3400 A of current to supply the 6.5 million electronics channels, and supply of control and data transmission lines for those channels. These objectives must be achieved in a high ionizing radiation environment, using virtually no structural mass and only low-Z materials. The system must be maintainable during its 10 year operating life

  8. Study on photon sensitivity of silicon diodes related to materials used for shielding

    International Nuclear Information System (INIS)

    Moiseev, T.

    1999-01-01

    Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter. (author)

  9. Study on Photon Sensitivity of Silicon Diodes Related to Materials Used for Shielding

    International Nuclear Information System (INIS)

    Moiseev, T.

    2000-01-01

    Large area Silicon diodes used in electronic neutron dosemeters have a significant over-response to X and gamma rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diodes active area and strongly affects the neutron sensitivity of such dosemeters. Since Silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X and gamma rays energy range is proposed by designing a composed photon filter. (author)

  10. ESP – Data from Restarted Life Tests of Various Silicon Materials

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, Jim

    2010-10-06

    Current funding has allowed the restart of testing of various silicone materials placed in Life Tests or Aging Studies from past efforts. Some of these materials have been in test since 1982, with no testing for approximately 10 years, until funding allowed the restart in FY97. Charts for the various materials at different thickness, compression, and temperature combinations illustrate trends for the load-bearing properties of the materials.

  11. Supercapacitor electrodes based on polyaniline-silicon nanoparticle composite

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qiang; Yau, Siu-Tung [Department of Electrical and Computer Engineering, Cleveland State University, 2121 Euclid Avenue, Cleveland, OH 44115 (United States); Nayfeh, Munir H. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States)

    2010-06-15

    A composite material formed by dispersing ultrasmall silicon nanoparticles in polyaniline has been used as the electrode material for supercapacitors. Electrochemical characterization of the composite indicates that the nanoparticles give rise to double-layer capacitance while polyaniline produces pseudocapacitance. The composite shows significantly improved capacitance compared to that of polyaniline. The enhanced capacitance results in high power (220 kW kg{sup -1}) and energy-storage (30 Wh kg{sup -1}) capabilities of the composite material. A prototype supercapacitor using the composite as the charge storage material has been constructed. The capacitor showed the enhanced capacitance and good device stability during 1000 charging/discharging cycles. (author)

  12. Nanostructured silicon-based biosensors for the selective identification of analytes of social interest

    International Nuclear Information System (INIS)

    D'Auria, Sabato; Champdore, Marcella de; Aurilia, Vincenzo; Parracino, Antonietta; Staiano, Maria; Vitale, Annalisa; Rossi, Mose; Rea, Ilaria; Rotiroti, Lucia; Rossi, Andrea M; Borini, Stefano; Rendina, Ivo; Stefano, Luca De

    2006-01-01

    Small analytes such as glucose, L-glutamine (Gln), and ammonium nitrate are detected by means of optical biosensors based on a very common nanostructured material, porous silicon (PSi). Specific recognition elements, such as protein receptors and enzymes, were immobilized on hydrogenated PSi wafers and used as probes in optical sensing systems. The binding events were optically transduced as wavelength shifts of the porous silicon reflectivity spectrum or were monitored via changes of the fluorescence emission. The biosensors described in this article suggest a general approach for the development of new sensing systems for a wide range of analytes of high social interest

  13. Design of silicon-based fractal antennas

    KAUST Repository

    Ghaffar, Farhan A.

    2012-11-20

    This article presents Sierpinski carpet fractal antennas implemented in conventional low resistivity (Ï =10 Ω cm) as well as high resistivity (Ï =1500 Ω cm) silicon mediums. The fractal antenna is 36% smaller as compared with a typical patch antenna at 24 GHz and provides 13% bandwidth on high resistivity silicon, suitable for high data rate applications. For the first time, an on-chip fractal antenna array is demonstrated in this work which provides double the gain of a single fractal element as well as enhanced bandwidth. A custom test fixture is utilized to measure the radiation pattern and gain of these probe-fed antennas. In addition to gain and impedance characterization, measurements have also been made to study intrachip communication through these antennas. The comparison between the low resistivity and high resistivity antennas indicate that the former is not a suitable medium for array implementation and is only suitable for short range communication whereas the latter is appropriate for short and medium range wireless communication. The design is well-suited for compact, high data rate System-on-Chip (SoC) applications as well as for intrachip communication such as wireless global clock distribution in synchronous systems. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:180-186, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27245 Copyright © 2012 Wiley Periodicals, Inc.

  14. Design of silicon-based fractal antennas

    KAUST Repository

    Ghaffar, Farhan A.; Shamim, Atif

    2012-01-01

    This article presents Sierpinski carpet fractal antennas implemented in conventional low resistivity (Ï =10 Ω cm) as well as high resistivity (Ï =1500 Ω cm) silicon mediums. The fractal antenna is 36% smaller as compared with a typical patch antenna at 24 GHz and provides 13% bandwidth on high resistivity silicon, suitable for high data rate applications. For the first time, an on-chip fractal antenna array is demonstrated in this work which provides double the gain of a single fractal element as well as enhanced bandwidth. A custom test fixture is utilized to measure the radiation pattern and gain of these probe-fed antennas. In addition to gain and impedance characterization, measurements have also been made to study intrachip communication through these antennas. The comparison between the low resistivity and high resistivity antennas indicate that the former is not a suitable medium for array implementation and is only suitable for short range communication whereas the latter is appropriate for short and medium range wireless communication. The design is well-suited for compact, high data rate System-on-Chip (SoC) applications as well as for intrachip communication such as wireless global clock distribution in synchronous systems. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:180-186, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27245 Copyright © 2012 Wiley Periodicals, Inc.

  15. Silicon carbide-silicon as a support material for oxygen evolution reaction in PEM steam electrolysers

    DEFF Research Database (Denmark)

    Nikiforov, Aleksey; Petrushina, Irina; Christensen, Erik

    cells. In the present work a commercial SiC-Si, produced by the Acheson process, with a fraction of free silicon around 20% wt. was investigated as a catalyst support for anode electrocatalyst in PEM steam electrolysers. This electrocatalyst system was characterized using several techniques such as XRD......, cyclic voltammetry, SEM, EDX and steady state electrochemical polarisation in a working PEM steam electrolyser. Several SiC-Si-IrO2 electrodes have been prepared and tested. The iridium oxide content at the electrode active layer varied from x=0.2 to x=1, corresponding to the general formula (1-x...... for phosphoric acid doped membrane steam electrolysers....

  16. Silicon-on-Insulator Nanowire Based Optical Waveguide Biosensors

    International Nuclear Information System (INIS)

    Li, Mingyu; Liu, Yong; Chen, Yangqing; He, Jian-Jun

    2016-01-01

    Optical waveguide biosensors based on silicon-on-insulator (SOI) nanowire have been developed for label free molecular detection. This paper reviews our work on the design, fabrication and measurement of SOI nanowire based high-sensitivity biosensors employing Vernier effect. Biosensing experiments using cascaded double-ring sensor and Mach-Zehnder- ring sensor integrated with microfluidic channels are demonstrated (paper)

  17. Silicon based multilayer photoelectrodes for photoelectrolysis of water to produce hydrogen from the sun

    Science.gov (United States)

    Faruque, Faisal

    The main objective of this work is to study different materials for the direct photosynthesis of hydrogen from water. A variety of photocatalysts such as titanium dioxide, titanium oxy-nitride, silicon carbide, and gallium nitride are being investigated by others for the clean production of hydrogen for fuel cells and hydrogen economy. Our approach was to deposit suitable metallic regions on photocatalyst nanoparticles to direct the efficient synthesis of hydrogen to a particular site for convenient collection. We studied different electrode metals such as gold, platinum, titanium, palladium, and tungsten. We also studied different solar cell materials such as silicon (p- and n-types), silicon carbide and titanium dioxide semiconductors in order to efficiently generate electrons under illumination. We introduced a novel silicon-based multilayer photosynthesis device to take advantage of suitable properties of silicon and tungsten to efficiently produce hydrogen. The device consisted of a silicon (0.5mm) substrate, a deposited atomic layer of Al2O 3 (1nm), a doped polysilicon (0.1microm), and finally a tungsten nanoporous (5-10nm) layer acting as an interface electrode with water. The Al2O 3 layer was introduced to reduce leakage current and to prevent the spreading of the diffused p-n junction layer between the silicon and doped polysilicon layers. The surface of the photoelectrode was coated with nanotextured tungsten nanopores (TNP), which increased the surface area of the electrodes to the electrolyte, assisting in electron-hole mobility, and acting as a photocatalyst. The reported device exhibited a fill factor (%FF) of 27.22% and solar-to-hydrogen conversion efficiency of 0.03174%. This thesis describes the structures of the device, and offers a characterization and comparison between different photoelectrodes.

  18. Macroscopic results for a novel oxygenated silicon material

    International Nuclear Information System (INIS)

    Watts, S.J.; Da Via', C.; Karpenko, A.

    2002-01-01

    High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O 2i ) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4 kΩ cm, with an oxygen concentration of 10 15 and 10 17 cm -3 . Results for doping changes, leakage current and annealing behaviour after irradiation with 24 GeV/c protons are shown

  19. Macroscopic results for a novel oxygenated silicon material

    CERN Document Server

    Watts, S J; Karpenko, A

    2002-01-01

    High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O sub 2 sub i) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4 k OMEGA cm, with an oxygen concentration of 10 sup 1 sup 5 and 10 sup 1 sup 7 cm sup - sup 3. Results for doping changes, leakage current and annealing behaviour after irradiation with 24 GeV/c protons are shown.

  20. Silicon-Based Detectors at the HL-LHC

    CERN Document Server

    Hartmann, Frank

    2018-01-01

    This document discusses the silicon-based detectors planned for the High Luminosity LHC. The special aspects to cope with the new environment and its challenges, e.g. very high radiation levels and very high instantaneous luminosity thus high pile-up, high occupancy and high data rates, are addressed. The different design choices of the detectors are put into perspective. Exciting topics like trackers, high granularity silicon-based calorimetry with novel 8~inch processing, fast timing and new triggers are described.

  1. Investigation of a Mesoporous Silicon Based Ferromagnetic Nanocomposite

    Directory of Open Access Journals (Sweden)

    Roca AG

    2009-01-01

    Full Text Available Abstract A semiconductor/metal nanocomposite is composed of a porosified silicon wafer and embedded ferromagnetic nanostructures. The obtained hybrid system possesses the electronic properties of silicon together with the magnetic properties of the incorporated ferromagnetic metal. On the one hand, a transition metal is electrochemically deposited from a metal salt solution into the nanostructured silicon skeleton, on the other hand magnetic particles of a few nanometres in size, fabricated in solution, are incorporated by immersion. The electrochemically deposited nanostructures can be tuned in size, shape and their spatial distribution by the process parameters, and thus specimens with desired ferromagnetic properties can be fabricated. Using magnetite nanoparticles for infiltration into porous silicon is of interest not only because of the magnetic properties of the composite material due to the possible modification of the ferromagnetic/superparamagnetic transition but also because of the biocompatibility of the system caused by the low toxicity of both materials. Thus, it is a promising candidate for biomedical applications as drug delivery or biomedical targeting.

  2. Achievement report for fiscal 1997 on development of practical application technology for photovoltaic power generation systems. Development of technologies to manufacture thin film solar cells (development of technologies to manufacture silicon crystal based high-quality materials and substrates / survey and research on analysis of practical application); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (zairyo kiban seizo gijutsu kaihatsu / silicon kesshokei kohinshitsu zairyo kiban no seizo gijutsu kaihatsu (jitsuyoka kaiseki ni kansuru chosa kenkyu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    As a plan to develop technologies to manufacture materials and substrates for thin film solar cells, it is intended to reduce defect density, enhance film forming speed, largely improve the photo-electric conversion efficiency and increase manufacturing productivity. These goals will be realized by establishing methods to control defect density, crystal particle diameters and crystallization rate in silicon crystal systems. A technology to form micro-crystal silicon-based thin films will be developed, that have superior photo-stability, and are capable of realizing low cost and mass production. Discussions will be given on a high-density plasma control technology, a fundamental property evaluation technology for micro crystal silicon thin films, and a device design simulation technology. A technology will be developed to form amorphous silicon layer on a stainless steel substrate by using the plasma CVD process. At the same time, discussions will be given on optical annealing and thermal annealing as reformation methods. Fiscal 1997 has surveyed component technologies to identify and analyze quickly and accurately the technical trends inside and outside the country, and to mass produce thin film solar cells. The Material and Substrate System Technology Subcommittee (silicon crystals) was held to deliberate the four-year development program and its progress. (NEDO)

  3. Ninth workshop on crystalline silicon solar cell materials and processes: Summary discussion sessions

    International Nuclear Information System (INIS)

    Sopori, B.; Tan, T.; Swanson, D.; Rosenblum, M.; Sinton, R.

    1999-01-01

    This report is a summary of the panel discussions included with the Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme for the workshop was ''R and D Challenges and Opportunities in Si Photovoltaics''. This theme was chosen because it appropriately reflects a host of challenges that the growing production of Si photovoltaics will be facing in the new millennium. The anticipated challenges will arise in developing strategies for cost reduction, increased production, higher throughput per manufacturing line, new sources of low-cost Si, and the introduction of new manufacturing processes for cell production. At the same time, technologies based on CdTe and CIS will come on line posing new competition. With these challenges come new opportunities for Si PV to wean itself from the microelectronics industry, to embark on a more aggressive program in thin-film Si solar cells, and to try new approaches to process monitoring

  4. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  5. A miniaturized silicon based device for nucleic acids electrochemical detection

    Directory of Open Access Journals (Sweden)

    Salvatore Petralia

    2015-12-01

    Full Text Available In this paper we describe a novel portable system for nucleic acids electrochemical detection. The core of the system is a miniaturized silicon chip composed by planar microelectrodes. The chip is embedded on PCB board for the electrical driving and reading. The counter, reference and work microelectrodes are manufactured using the VLSI technology, the material is gold for reference and counter electrodes and platinum for working electrode. The device contains also a resistor to control and measuring the temperature for PCR thermal cycling. The reaction chamber has a total volume of 20 μL. It is made in hybrid silicon–plastic technology. Each device contains four independent electrochemical cells.Results show HBV Hepatitis-B virus detection using an unspecific DNA intercalating redox probe based on metal–organic compounds. The recognition event is sensitively detected by square wave voltammetry monitoring the redox signals of the intercalator that strongly binds to the double-stranded DNA. Two approaches were here evaluated: (a intercalation of electrochemical unspecific probe on ds-DNA on homogeneous solution (homogeneous phase; (b grafting of DNA probes on electrode surface (solid phase.The system and the method here reported offer better advantages in term of analytical performances compared to the standard commercial optical-based real-time PCR systems, with the additional incomes of being potentially cheaper and easier to integrate in a miniaturized device. Keywords: Electrochemical detection, Real time PCR, Unspecific DNA intercalator

  6. Fabrication and Characterization of Nanopillars for Silicon-Based Thermoelectrics

    Science.gov (United States)

    Stranz, A.; Sökmen, Ü.; Wehmann, H.-H.; Waag, A.; Peiner, E.

    2010-09-01

    Si-based nanopillars of various sizes were fabricated by lateral structuring using anisotropic etching and thermal oxidation. We obtained pillars of diameter <500 nm, about 25 μm in height, with an aspect ratio of more than 50. The distance between pillars was varied from 500 nm to 10 μm. Besides the fabrication and structural characterization of silicon nanopillars, implementation of adequate metrology for measuring single pillars is described. Commercial tungsten probes, self-made gold probes, and piezoresistive silicon cantilever probes were used for measurements of nanopillars in a scanning electron microscope (SEM) equipped with nanomanipulators.

  7. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  8. Fast neutron dosimeter with wide base silicon diode

    International Nuclear Information System (INIS)

    Ma Lu

    1986-01-01

    This paper briefly introduces a wide base silicon diode fast neutron dosimeter with wide measuring range and good energy response to fast neutron. It is suitable to be used to detect fast neutrons in the mixed field of γ-ray, thermal neutrons and fast neutrons

  9. Fabrication of silicon based glass fibres for optical communication

    Indian Academy of Sciences (India)

    Silicon based glass fibres are fabricated by conventional fibre drawing process. First, preform fabrication is carried out by means of conventional MCVD technique by using various dopants such as SiCl4, GeCl4, POCl3, and FeCl3. The chemicals are used in such a way that step index single mode fibre can be drawn.

  10. Cobalt nanosheet arrays supported silicon film as anode materials for lithium ion batteries

    International Nuclear Information System (INIS)

    Huang, X.H.; Wu, J.B.; Cao, Y.Q.; Zhang, P.; Lin, Y.; Guo, R.Q.

    2016-01-01

    Cobalt nanosheet arrays supported silicon film is prepared and used as anode materials for lithium ion batteries. The film is fabricated using chemical bath deposition, hydrogen reduction and radio-frequency magnetron sputtering techniques. The microstructure and morphology are characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). In this composite film, the silicon layer is supported by interconnected aligned cobalt nanosheet arrays that act as the three-dimensional current collector and buffering network. The electrochemical performance as anode materials for lithium ion batteries is investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. The results show that the film prepared by sputtering for 1500 s exhibits high capacity, good rate capability and stable cycle ability. It is believed that the cobalt nanosheet arrays play important roles in the electrochemical performance of the silicon layer.

  11. Synthesis, characterization and functionalization of silicon nanoparticle based hybrid nanomaterials for photovoltaic and biological applications

    Science.gov (United States)

    Xu, Zejing

    linked silicon nanoparticle clusters were synthesized via the CuAAC "click" reaction of functional silicon nanoparticles with α,ω-functional PEG polymers of various lengths. Dynamic light scattering studies show that the flexible globular nanoparticle arrays undergo a solvent dependent change in volume (ethanol> dichloromethane> toluene) similar in behavior to hydrogel nanocomposites. A novel light-harvesting complex and artificial photosynthetic material based on silicon nanoparticles was designed and synthesized. Silicon nanoparticles were used as nanoscaffolds for organizing the porphyrins to form light-harvesting complexes thereby enhancing the light absorption of the system. The energy transfer from silicon nanoparticles to porphyrin acceptors was investigated by both steady-state and time-resolved fluorescence spectroscopy. The energy transfer efficiency depended on the donor-acceptor ratio and the distance between the nanoparticle and the porphyrin ring. The addition of C60 resulted in the formation of silicon nanoparticle-porphyrin-fullerene nanoclusters which led to charge separation upon irradiation of the porphyrin ring. The electron-transfer process between the porphyrin and fullerene was investigated by femto-second transient absorption spectroscopy. Finally, the water soluble silicon nanoparticles were used as nanocarriers in photodynamic therapeutic application, in which can selectively deliver porphyrins into human embryonic kidney 293T (HEK293T) cells. In particular, the PEGylated alkynyl-porphyrins were conjugated onto the azido-terminated silicon nanoparticles via a CuAAC "click" reaction. The resultant PEGylated porphyrin grafted silicon nanoparticles have diameters around 13.5 +/- 3.8 nm. The cryo-TEM and conventional TEM analysis proved that the PEGylated porphyrin grafted silicon nanoparticle could form the micelle-like structures at higher concentration in water via self-assembly. The UV-Vis absorption analysis demonstrated that the silicon

  12. Use of Monocrystalline Silicon as Tool Material for Highly Accurate Blanking of Thin Metal Foils

    International Nuclear Information System (INIS)

    Hildering, Sven; Engel, Ulf; Merklein, Marion

    2011-01-01

    The trend towards miniaturisation of metallic mass production components combined with increased component functionality is still unbroken. Manufacturing these components by forming and blanking offers economical and ecological advantages combined with the needed accuracy. The complexity of producing tools with geometries below 50 μm by conventional manufacturing methods becomes disproportional higher. Expensive serial finishing operations are required to achieve an adequate surface roughness combined with accurate geometry details. A novel approach for producing such tools is the use of advanced etching technologies for monocrystalline silicon that are well-established in the microsystems technology. High-precision vertical geometries with a width down to 5 μm are possible. The present study shows a novel concept using this potential for the blanking of thin copper foils with monocrystallline silicon as a tool material. A self-contained machine-tool with compact outer dimensions was designed to avoid tensile stresses in the brittle silicon punch by an accurate, careful alignment of the punch, die and metal foil. A microscopic analysis of the monocrystalline silicon punch shows appropriate properties regarding flank angle, edge geometry and surface quality for the blanking process. Using a monocrystalline silicon punch with a width of 70 μm blanking experiments on as-rolled copper foils with a thickness of 20 μm demonstrate the general applicability of this material for micro production processes.

  13. Solidification phenomena in nickel base brazes containing boron and silicon

    International Nuclear Information System (INIS)

    Tung, S.K.; Lim, L.C.; Lai, M.O.

    1996-01-01

    Nickel base brazes containing boron and/or silicon as melting point depressants are used extensively in the repair and joining of aero-engine hot-section components. These melting point depressants form hard and brittle intermetallic compounds with nickel which are detrimental to the mechanical properties of brazed joints. The present investigation studied the microstructural evolution in nickel base brazes containing boron and/or silicon as melting point depressant(s) in simple systems using nickel as the base metal. The basic metallurgical reactions and formation of intermetallic compounds uncovered in these systems will be useful as a guide in predicting the evolution of microstructures in similar brazes in more complex systems involving base metals of nickel base superalloys. The four filler metal systems investigated in this study are: Ni-Cr-Si; Ni-Cr-B; Ni-Si-B and Ni-Cr-Fe-Si-B

  14. Electroplated contacts and porous silicon for silicon based solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Kholostov, Konstantin, E-mail: kholostov@diet.uniroma1.it [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Serenelli, Luca; Izzi, Massimo; Tucci, Mario [Enea Casaccia Research Centre Rome, via Anguillarese 301, 00123 Rome (Italy); Balucani, Marco [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Rise Technology S.r.l., Lungomare Paolo Toscanelli 170, 00121 Rome (Italy)

    2015-04-15

    Highlights: • Uniformity of the Ni–Si interface is crucial for performance of Cu–Ni contacts on Si. • Uniformly filled PS is the key to obtain the best performance of Cu–Ni contacts on Si. • Optimization of anodization and electroplating allows complete filling of PS layer. • Highly adhesive and low contact resistance Cu–Ni contacts are obtained on Si. - Abstract: In this paper, a two-layer metallization for silicon based solar cells is presented. The metallization consists of thin nickel barrier and thick copper conductive layers, both obtained by electrodeposition technique suitable for phosphorus-doped 70–90 Ω/sq solar cell emitter formed on p-type silicon substrate. To ensure the adhesion between metal contact and emitter a very thin layer of mesoporous silicon is introduced on the emitter surface before metal deposition. This approach allows metal anchoring inside pores and improves silicon–nickel interface uniformity. Optimization of metal contact parameters is achieved varying the anodization and electrodeposition conditions. Characterization of contacts between metal and emitter is carried out by scanning electron microscopy, specific contact resistance and current–voltage measurements. Mechanical strength of nickel–copper contacts is evaluated by the peel test. Adhesion strength of more than 4.5 N/mm and contact resistance of 350 μΩ cm{sup 2} on 80 Ω/sq emitter are achieved.

  15. Optical switching at 1.55um in silicon racetrack resonators using phase change materials

    NARCIS (Netherlands)

    Rudé, M.; Pello, J.; Simpson, R.E.; Osmond, J.; Roelkens, G.C.; Tol, van der J.J.G.M.; Pruneri, V.

    2013-01-01

    An optical switch operating at a wavelength of 1.55¿µm and showing a 12 dB modulation depth is introduced. The device is implemented in a silicon racetrack resonator using an overcladding layer of the phase change data storage material Ge2Sb2Te5, which exhibits high contrast in its optical

  16. Hydroxyapatites enriched in silicon – Bioceramic materials for biomedical and pharmaceutical applications

    Directory of Open Access Journals (Sweden)

    Katarzyna Szurkowska

    2017-08-01

    Full Text Available Hydroxyapatite (Ca10(PO46(OH2, abbreviated as HA plays a crucial role in implantology, dentistry and bone surgery. Due to its considerable similarity to the inorganic fraction of the mineralized tissues (bones, enamel and dentin, it is used as component in many bone substitutes, coatings of metallic implants and dental materials. Biomaterial engineering often takes advantage of HA capacity for partial ion substitution because the incorporation of different ions in the HA structure leads to materials with improved biological or physicochemical properties. The objective of the work is to provide an overview of current knowledge about apatite materials substituted with silicon ions. Although the exact mechanism of action of silicon in the bone formation process has not been fully elucidated, research has shown beneficial effects of this element on bone matrix mineralization as well as on collagen type I synthesis and stabilization. The paper gives an account of the functions of silicon in bone tissue and outlines the present state of research on synthetic HA containing silicate ions (Si-HA. Finally, methods of HA production as well as potential and actual applications of HA materials modified with silicon ions are discussed.

  17. N-type nano-silicon powders with ultra-low electrical resistivity as anode materials in lithium ion batteries

    Science.gov (United States)

    Yue, Zhihao; Zhou, Lang; Jin, Chenxin; Xu, Guojun; Liu, Liekai; Tang, Hao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Yuan, Jiren

    2017-06-01

    N-type silicon wafers with electrical resistivity of 0.001 Ω cm were ball-milled to powders and part of them was further mechanically crushed by sand-milling to smaller particles of nano-size. Both the sand-milled and ball-milled silicon powders were, respectively, mixed with graphite powder (silicon:graphite = 5:95, weight ratio) as anode materials for lithium ion batteries. Electrochemical measurements, including cycle and rate tests, present that anode using sand-milled silicon powder performed much better. The first discharge capacity of sand-milled silicon anode is 549.7 mAh/g and it is still up to 420.4 mAh/g after 100 cycles. Besides, the D50 of sand-milled silicon powder shows ten times smaller in particle size than that of ball-milled silicon powder, and they are 276 nm and 2.6 μm, respectively. In addition, there exist some amorphous silicon components in the sand-milled silicon powder excepting the multi-crystalline silicon, which is very different from the ball-milled silicon powder made up of multi-crystalline silicon only.

  18. Fabrication and properties of graphene reinforced silicon nitride composite materials

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yaping; Li, Bin, E-mail: libin@nudt.edu.cn; Zhang, Changrui; Wang, Siqing; Liu, Kun; Yang, Bei

    2015-09-17

    Silicon nitride (Si{sub 3}N{sub 4}) ceramic composites reinforced with graphene platelets (GPLs) were prepared by hot pressed sintering and pressureless sintering respectively. Adequate intermixing of the GPLs and the ceramic powders was achieved in nmethyl-pyrrolidone (NMP) under ultrasonic vibration followed by ball-milling. The microstructure and phases of the Si{sub 3}N{sub 4} ceramic composites were investigated by Field Emission Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The effects of GPLs on the composites' mechanical properties were analyzed. The results showed that GPLs were well dispersed in the Si{sub 3}N{sub 4} ceramic matrix. β-Si{sub 3}N{sub 4,} O′-sialon and GPLs were present in the hot-pressed composites while pressureless sintered composites contain β-Si{sub 3}N{sub 4}, Si, SiC and GPLs. Graphene has the potential to improve the mechanical properties of both the hot pressed and pressureless sintered composites. Toughening effect of GPLs on the pressureless sintered composites appeared more effective than that on the hot pressed composites. Toughening mechanisms, such as pull-out, crack bridging and crack deflection induced by GPLs were observed in the composites prepared by the two methods.

  19. Fabrication and properties of graphene reinforced silicon nitride composite materials

    International Nuclear Information System (INIS)

    Yang, Yaping; Li, Bin; Zhang, Changrui; Wang, Siqing; Liu, Kun; Yang, Bei

    2015-01-01

    Silicon nitride (Si 3 N 4 ) ceramic composites reinforced with graphene platelets (GPLs) were prepared by hot pressed sintering and pressureless sintering respectively. Adequate intermixing of the GPLs and the ceramic powders was achieved in nmethyl-pyrrolidone (NMP) under ultrasonic vibration followed by ball-milling. The microstructure and phases of the Si 3 N 4 ceramic composites were investigated by Field Emission Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The effects of GPLs on the composites' mechanical properties were analyzed. The results showed that GPLs were well dispersed in the Si 3 N 4 ceramic matrix. β-Si 3 N 4, O′-sialon and GPLs were present in the hot-pressed composites while pressureless sintered composites contain β-Si 3 N 4 , Si, SiC and GPLs. Graphene has the potential to improve the mechanical properties of both the hot pressed and pressureless sintered composites. Toughening effect of GPLs on the pressureless sintered composites appeared more effective than that on the hot pressed composites. Toughening mechanisms, such as pull-out, crack bridging and crack deflection induced by GPLs were observed in the composites prepared by the two methods

  20. Plasmonic silicon solar cells: impact of material quality and geometry.

    Science.gov (United States)

    Pahud, Celine; Isabella, Olindo; Naqavi, Ali; Haug, Franz-Josef; Zeman, Miro; Herzig, Hans Peter; Ballif, Christophe

    2013-09-09

    We study n-i-p amorphous silicon solar cells with light-scattering nanoparticles in the back reflector. In one configuration, the particles are fully embedded in the zinc oxide buffer layer; In a second configuration, the particles are placed between the buffer layer and the flat back electrode. We use stencil lithography to produce the same periodic arrangement of the particles and we use the same solar cell structure on top, thus establishing a fair comparison between a novel plasmonic concept and its more traditional counterpart. Both approaches show strong resonances around 700 nm in the external quantum efficiency the position and intensity of which vary strongly with the nanoparticle shape. Moreover, disagreement between simulations and our experimental results suggests that the dielectric data of bulk silver do not correctly represent the reality. A better fit is obtained by introducing a porous interfacial layer between the silver and zinc oxide. Without the interfacial layer, e.g. by improved processing of the nanoparticles, our simulations show that the nanoparticles concept could outperform traditional back reflectors.

  1. Temperature and humidity effect on aging of silicone rubbers as sealing materials for proton exchange membrane fuel cell applications

    International Nuclear Information System (INIS)

    Chang, Huawei; Wan, Zhongmin; Chen, Xi; Wan, Junhua; Luo, Liang; Zhang, Haining; Shu, Shuiming; Tu, Zhengkai

    2016-01-01

    Highlights: • Aging of silicone rubbers with different hardness was investigated. • Existed water molecules from humidified gases can accelerate the aging process. • Silicone rubber with hardness of 40 is more suitable as sealing materials. • Silicone rubbers can be used as sealing materials below 80 °C but not above 100 °C. - Abstract: Durability and reliability of seals around perimeter of each unit are critical to the lifetime of proton exchange membrane fuel cells. In this study, we investigate the aging of silicone rubbers with different hardness, often used as sealing materials for fuel cells, subjected to dry and humidified air at different temperatures. The aging properties are characterized by variation of permanent compression set value under compression, mechanical properties, and surface morphology as well. The results show that aging of silicone rubbers becomes more severe with the increase in subjected temperature. At temperature above 100 °C, silicone rubbers are not suitable for fuel cell applications. The existed water molecules from humidified gases can accelerate the aging of silicone rubbers. Among the tested samples, silicone rubber with hardness of 40 is more durable than that with hardness of 30 and 50 for fuel cells. The change of chemical structure after aging suggests that the aging of silicone rubbers mainly results from the chemical decomposition of cross-linker units for connection of polysiloxane backbones and of methyl groups attached to silicon atoms.

  2. Self-assembled peptide nanotubes as an etching material for the rapid fabrication of silicon wires

    DEFF Research Database (Denmark)

    Larsen, Martin Benjamin Barbour Spanget; Andersen, Karsten Brandt; Svendsen, Winnie Edith

    2011-01-01

    This study has evaluated self-assembled peptide nanotubes (PNTS) and nanowires (PNWS) as etching mask materials for the rapid and low-cost fabrication of silicon wires using reactive ion etching (RIE). The self-assembled peptide structures were fabricated under mild conditions and positioned on c...... characterization by SEM and I-V measurements. Additionally, the fabricated silicon structures were functionalized with fluorescent molecules via a biotin-streptavidin interaction in order to probe their potential in the development of biosensing devices....

  3. Work plan for testing silicone impression material and fixture on pool cell capsule

    International Nuclear Information System (INIS)

    Lundeen, J.E.

    1994-01-01

    The purpose of this work plan is to provide a safe procedure to test a cesium capsule impression fixture at Waste Encapsulation and Storage Facility (WESF). The impression will be taken with silicone dental impression material pressed down upon the capsule using the impression fixture. This test will evaluate the performance of the fixture and impression material under high radiation and temperature conditions on a capsule in a WESF pool cell

  4. A parylene-filled-trench technique for thermal isolation in silicon-based microdevices

    International Nuclear Information System (INIS)

    Lei Yinhua; Wang Wei; Li Ting; Jin Yufeng; Zhang Haixia; Li Zhihong; Yu Huaiqiang; Luo Yingcun

    2009-01-01

    Microdevices prepared in a silicon substrate have been widely used in versatile fields due to the matured silicon-based microfabrication technique and the excellent physical properties of silicon material. However, the high thermal conductivity of silicon restricts its application in most thermal microdevices, especially devices comprising different temperature zones. In this work, a parylene-filled-trench technique was optimized to realize high-quality thermal isolation in silicon-based microdevices. Parylene C, a heat transfer barricading material, was deposited on parallel high-aspect-ratio trenches, which surrounded the isolated target zones. After removing the remnant silicon beneath the trenches by deep reactive ion etching from the back side, a high-quality heat transfer barrier was obtained. By using narrow trenches, only 5 µm thick parylene was required for a complete filling, which facilitated multi-layer interconnection thereafter. The parylene filling performance inside the high-aspect-ratio trench was optimized by two approaches: multiple etch–deposition cycling and trench profile controlling. A 4 × 6 array, in which each unit was kept at a constant temperature and was well thermally isolated individually, was achieved on a silicon substrate by using the present parylene-filled-trench technique. The preliminary experimental results indicated that the present parylene-filled-trench structure exhibited excellent thermal isolation performance, with a very low power requirement of 0.134 mW (K mm 2 ) −1 for heating the isolated silicon unit and a high thermal isolation efficiency of 72.5% between two adjacent units. Accompanied with high-quality isolation performance, the microdevices embedded the present parylene-filled-trench structure to retain a strong mechanical connection larger than 400 kPa between two isolated zones, which is very important for a high-reliability-required micro-electro-mechanical-system (MEMS) device. Considering its room

  5. An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

    Science.gov (United States)

    Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

    2017-09-01

    Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

  6. Ballistic Spin Field Effect Transistor Based on Silicon Nanowires

    Science.gov (United States)

    Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried

    2011-03-01

    We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.

  7. Bulk solar grade silicon: how chemistry and physics play to get a benevolent microstructured material

    Energy Technology Data Exchange (ETDEWEB)

    Pizzini, S. [University of Milano-Bicocca, Department of Materials Science, Milan (Italy); Nedsilicon SpA, Osimo, Ancona (Italy)

    2009-07-15

    The availability of low-cost alternatives to electronic grade silicon has been and still is the condition for the extensive use of photovoltaics as an efficient sun harvesting system. The first step towards this objective was positively carried out in the 1980s and resulted in the reduction in cost and energy of the growth process using as feedstock electronic grade scraps and a variety of solidification procedures, all of which deliver a multi-crystalline material of high photovoltaic quality. The second step was an intense R and D activity aiming at defining and developing at lab scale a new variety of silicon, called ''solar grade'' silicon, which should fulfil the requirement of both cost effectiveness and high conversion efficiency. The third step involved and still involves the development of cost-effective technologies for the manufacture of solar grade silicon, in alternative to the classical Siemens route, which relays, as is well-known, to the pyrolitic decomposition of high-purity trichlorosilane and which is, also in its more advanced versions, extremely energy intensive. Aim of this paper is to give the author's viewpoint about some open questions concerning bulk solar silicon for PV applications and about challenges and chances of novel feedstocks of direct metallurgical origin. (orig.)

  8. Effective Chemical Route to 2D Nanostructured Silicon Electrode Material: Phase Transition from Exfoliated Clay Nanosheet to Porous Si Nanoplate

    International Nuclear Information System (INIS)

    Adpakpang, Kanyaporn; Patil, Sharad B.; Oh, Seung Mi; Kang, Joo-Hee; Lacroix, Marc; Hwang, Seong-Ju

    2016-01-01

    Graphical abstract: Effective morphological control of porous silicon 2D nanoplate can be achieved by the magnesiothermically-induced phase transition of exfoliated silicate clay nanosheets. The promising lithium storage performance of the obtained silicon materials with huge capacity and excellent rate characteristics underscores the prime importance of porously 2D nanostructured morphology of silicon. - Highlights: • 2D nanostructured silicon electrode materials are successfully synthesized via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. • High discharge capacity and rate capability are achieved from the 2D nanoplates of silicon. • Silicon 2D nanoplates can enhance both Li"+ diffusion and charge-transfer kinetics. • 2D nanostructured silicon is beneficial for the cycling stability by minimizing the volume change during lithiation-delithiation. - Abstract: An efficient and economical route for the synthesis of porous two-dimensional (2D) nanoplates of silicon is developed via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. The magnesiothermic reaction of precursor clay nanosheets prepared by the exfoliation and restacking with Mg"2"+ cations yields porous 2D nanoplates of elemental silicon. The variation in the Mg:SiO_2 ratio has a significant effect on the porosity and connectivity of silicon nanoplates. The porous silicon nanoplates show a high discharge capacity of 2000 mAh g"−"1 after 50 cycles. Of prime importance is that this electrode material still retains a large discharge capacity at higher C-rates, which is unusual for the elemental silicon electrode. This is mainly attributed to the improved diffusion of lithium ions, charge-transfer kinetics, and the preservation of the electrical connection of the porous 2D plate-shaped morphology. This study highlights the usefulness of clay mineral as an economical and scalable precursor of high-performance silicon electrodes with

  9. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  10. Fluorescent silicon carbide materials for white LEDs and photovoltaics

    DEFF Research Database (Denmark)

    Syväjärvi, Mikael; Ou, Haiyan; Wellmann, Peter

    the luminescence appears in the infrared region in a broad range from 700 to 1100 nm. This potentially can be used to develop an infrared LED for de-icing in wind power and airplanes, or medical applications. Further on, a very efficient solar cell material can be investigated by studying the impurity effect...

  11. Oxidation and corrosion of silicon-based ceramics and composites

    International Nuclear Information System (INIS)

    Jacobson, N.S.; Fox, D.S.; Smialek, J.L.

    1997-01-01

    Silica scales exhibit slow growth rates and a low activation energy. Thus silica-protected materials are attractive high temperature structural materials for their potentially excellent oxidation resistance and well-documented high temperature strength. This review focuses on silicon carbide, silicon nitride, and composites of these materials. It is divided into four parts: (i) Fundamental oxidation mechanisms, (ii) Special properties of silica scales, (iii) Protective coatings, and (iv) Internal oxidation behavior of composites. While the fundamental oxidation mechanism of SiC is understood, there are still many questions regarding the oxidation mechanism of Si 3 N 4 . Silica scales exhibit many unique properties as compared to chromia and alumina. These include slower growth rates, SiO(g) formation, sensitivity to water vapor and impurities, and dissolution by basic molten salts. Protective coatings can limit the deleterious effects. The fourth area-internal oxidation of fibers and fiber coatings in composites-has limited the application of these novel materials. Strategies for understanding and limiting this internal oxidation are discussed. (orig.)

  12. Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

    Science.gov (United States)

    ur Rehman, Atteq; Lee, Soo Hong

    2013-01-01

    The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

  13. Effects of material non-linearity on the residual stresses in a dendritic silicon crystal ribbon

    Science.gov (United States)

    Ray, Sujit K.; Utku, Senol

    1990-01-01

    Thermal stresses developed in a dendritic silicon crystal ribbon have been shown to cause plastic deformation and residual stresses in the ribbon. This paper presents an implementation of a numerical model proposed for thermoelastoplastic behavior of a material. The model has been used to study the effects of plasticity of silicon on the residual stresses. The material properties required to implement this model are all assumed, and the response of the material to the variations in these assumed parameters of the constitutive law and in the finite element mesh is investigated. The steady state growth process is observed to be periodic with nonzero residual stresses. Numerical difficulties are also encountered in the computer solution process, resulting in sharp jumps and large oscillations in the stress responses.

  14. Materials engineering data base

    Science.gov (United States)

    1995-01-01

    The various types of materials related data that exist at the NASA Marshall Space Flight Center and compiled into databases which could be accessed by all the NASA centers and by other contractors, are presented.

  15. Pemanfaatan serat silicon carbon dan partikel alumina pada matrik aluminium untuk meningkatkan sifat mekanis material komposit

    Directory of Open Access Journals (Sweden)

    Ketut Suarsana

    2017-03-01

    Full Text Available Abstrak: Pemanfaatan penguat material komposit berbasis serat dan juga partikel pada pembuatan bahan komposit sekarang ini sangatpotensial untuk dikembangkan dan diteliti. Beragam sumber serat dan juga penguat dalam bentuk partikel bisa didapat dari seratalami dari tumbuh-tubuhan dan juga serat yang sudah dikenakan perlakuan sebelumnya. Indonesia memiliki potensi sumberalam yang sangat potensial terutama sebgai sumber serat dari tumbuhan juga berupa logam aluminium (bauxite dari fosil.Bahan ini dapat dimanfaatkan untuk kebutuhan masyarakat industri sebagai bahan dasar pembuatan komposit bermatrikAluminium dan sebagai penguat berupa serat maupun partikel alumina. Metode pembuatan Aluminum Matrix Composite (AMCdengan proses metalurgi serbuk pada gaya tekan/kompaksi 2,5 ton mengunakan alat press hydrolik, waktu penahanan 15menit, serta proses perlakuan pada variasi komposisi berat (%wt. Variasi komposisi penguat serat Silicon Carbon (SiC danAl2O3 (alumina pada matrik Aluminium adalah : 30% SiC + 0% Al203, 27% SiC + 3% Al203, 24% SiC + 6% Al203 dan 21% SiC+ 9% Al203 dengan matrik 70% Al, pada kondisi tempertaur 500oC, 550oC dan 600oC. Setelah material komposit terbentuk, diujiuntuk mengetahui sifat mekanik akibat pengaruh variasi komposisi antara matrik dan penguatan pada komposit. Uji karakteristikdilakukan di laboratorium untuk menggetahui sifat kekuatan dan kekerasan material komposit. Selanjutnya dicari hubunganantara sifat masing-masing komposisi penguat serat SiC dan Al2O3 pembentuk komposit yang dibuat untuk mengetahui manfaatdari penguat serat dan partikel alumina.Kata Kunci: Sifat kekuatan, kekerasan, serat SiC dan Al2O3 Abstract: Utilization reinforcement fiber-based composite material and particles in the manufacture of composite materials now havepotential to be developed and researched. Various sources of fiber and reinforcement in particle form can be obtained fromnatural fibers from plants and fiber that has been subjected to a

  16. Adhesion between coating layers based on epoxy and silicone

    DEFF Research Database (Denmark)

    Svendsen, Jacob R.; Kontogeorgis, Georgios; Kiil, Søren

    2007-01-01

    The adhesion between a silicon tie-coat and epoxy primers, used in marine coating systems, has been studied in this work. Six epoxy coatings (with varying chain lengths of the epoxy resins), some of which have shown problems with adhesion to the tie-coat during service life, have been considered....... The experimental investigation includes measurements of the surface tension of the tie-coat and the critical surface tensions of the epoxies, topographic investigation of the surfaces of cured epoxy coatings via atomic force microscopy (AFM), and pull-off tests for investigating the strength of adhesion...... to the silicon/epoxy systems. Calculations for determining the roughness factor of the six epoxy coatings (based on the AFM topographies) and the theoretical work of adhesion have been carried out. The coating surfaces are also characterized based on the van Oss-Good theory. Previous studies on the modulus...

  17. Optical biosensor based on a silicon nanowire ridge waveguide for lab on chip applications

    International Nuclear Information System (INIS)

    Gamal, Rania; Ismail, Yehea; Swillam, Mohamed A

    2015-01-01

    We propose a novel sensor using a silicon nanowire ridge waveguide (SNRW). This waveguide is comprised of an array of silicon nanowires on an insulator substrate that has the envelope of a ridge waveguide. The SNRW inherently maximizes the overlap between the material-under-test and the incident light wave by introducing voids to the otherwise bulk structure. When a sensing sample is injected, the voids within the SNRW adopt the refractive index of the material-under-test. Hence, the strong contribution of the material-under-test to the overall modal effective index will greatly augment the sensitivity. Additionally, the ridge structure provides a fabrication convenience as it covers the entire substrate, ensuring that the etching process would not damage the substrate. Finite-difference time-domain simulations are conducted and showed that the percentage change in the effective index due to a 1% change in the surrounding environment is more than 170 times the change perceived in an evanescent-detection based bulk silicon ridge waveguide. Moreover, the SNRW proves to be more sensitive than recent other, non-evanescent sensors. In addition, the detection limit for this structure was revealed to be as small as 10 −8 . A compact bimodal waveguide based on SNRW is designed and tested. It delivers high sensitivity values that offer comparable performance to similar low-index light-guiding sensing configurations; however, our proposed structure has much smaller footprints and allows high dense integration for lab-on-chip applications. (paper)

  18. Key Success Factors and Future Perspective of Silicon-Based Solar Cells

    Directory of Open Access Journals (Sweden)

    S. Binetti

    2013-01-01

    Full Text Available Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV modules are based on crystalline silicon (c-Si. PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.

  19. An Educational Kit Based On a Modular Silicon Photomultiplier System

    International Nuclear Information System (INIS)

    Caccia, Massimo; Chmill, Valery; Ebolese, Amedeo; Martemyanov, Alexander; Risigo, Fabio; Santoro, Romualdo; Locatelli, Marco; Pieracci, Maura; Tintori, Carlo

    2013-06-01

    Silicon Photo-Multipliers (SiPM) are state of the art light detectors with unprecedented single photon sensitivity and photon number resolving capability, representing a breakthrough in several fundamental and applied Science domains. An educational experiment based on a SiPM set-up is proposed in this article, guiding the student towards a comprehensive knowledge of this sensor technology while experiencing the quantum nature of light and exploring the statistical properties of the light pulses emitted by a LED. (authors)

  20. Simulations for irradiation of silicon-based structures

    International Nuclear Information System (INIS)

    Sagatova, A.; Pavlovic, M.; Sedlackova, K.; Necas, V.; Hybler, P.; Zatko, B.

    2013-01-01

    The software ModePEB for modelling of electron beam processing in multilayer flat objects was shown to be a very useful tool for optimization of the irradiation of silicon based structures. Except its significant help in setting-up the accelerator parameters corresponding to a desired dose, its proven reliability and consistency with the measured data makes the ModePEB an inevitable instrument for design and optimization of electron irradiation experiments. (authors)

  1. Silicon-based optical integrated circuits for terabit communication networks

    International Nuclear Information System (INIS)

    Svidzinsky, K K

    2003-01-01

    A brief review is presented of the development of silicon-based optical integrated circuits used as components in modern all-optical communication networks with the terabit-per-second transmission capacity. The designs and technologies for manufacturing these circuits are described and the problems related to their development and application in WDM communication systems are considered. (special issue devoted to the memory of academician a m prokhorov)

  2. Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

    Directory of Open Access Journals (Sweden)

    Kuen-Hsien Wu

    2015-09-01

    Full Text Available Porous-silicon (PS multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells.

  3. Effects of slag-based silicon fertilizer on rice growth and brown-spot resistance.

    Science.gov (United States)

    Ning, Dongfeng; Song, Alin; Fan, Fenliang; Li, Zhaojun; Liang, Yongchao

    2014-01-01

    It is well documented that slag-based silicon fertilizers have beneficial effects on the growth and disease resistance of rice. However, their effects vary greatly with sources of slag and are closely related to availability of silicon (Si) in these materials. To date, few researches have been done to compare the differences in plant performance and disease resistance between different slag-based silicon fertilizers applied at the same rate of plant-available Si. In the present study both steel and iron slags were chosen to investigate their effects on rice growth and disease resistance under greenhouse conditions. Both scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to examine the effects of slags on ultrastructural changes in leaves of rice naturally infected by Bipolaris oryaze, the causal agent of brown spot. The results showed that both slag-based Si fertilizers tested significantly increased rice growth and yield, but decreased brown spot incidence, with steel slag showing a stronger effect than iron slag. The results of SEM analysis showed that application of slags led to more pronounced cell silicification in rice leaves, more silica cells, and more pronounced and larger papilla as well. The results of TEM analysis showed that mesophyll cells of slag-untreated rice leaf were disorganized, with colonization of the fungus (Bipolaris oryzae), including chloroplast degradation and cell wall alterations. The application of slag maintained mesophyll cells relatively intact and increased the thickness of silicon layer. It can be concluded that applying slag-based fertilizer to Si-deficient paddy soil is necessary for improving both rice productivity and brown spot resistance. The immobile silicon deposited in host cell walls and papillae sites is the first physical barrier for fungal penetration, while the soluble Si in the cytoplasm enhances physiological or induced resistance to fungal colonization.

  4. Wafer scale formation of monocrystalline silicon-based Mie resonators via silicon-on-insulator dewetting.

    Science.gov (United States)

    Abbarchi, Marco; Naffouti, Meher; Vial, Benjamin; Benkouider, Abdelmalek; Lermusiaux, Laurent; Favre, Luc; Ronda, Antoine; Bidault, Sébastien; Berbezier, Isabelle; Bonod, Nicolas

    2014-11-25

    Subwavelength-sized dielectric Mie resonators have recently emerged as a promising photonic platform, as they combine the advantages of dielectric microstructures and metallic nanoparticles supporting surface plasmon polaritons. Here, we report the capabilities of a dewetting-based process, independent of the sample size, to fabricate Si-based resonators over large scales starting from commercial silicon-on-insulator (SOI) substrates. Spontaneous dewetting is shown to allow the production of monocrystalline Mie-resonators that feature two resonant modes in the visible spectrum, as observed in confocal scattering spectroscopy. Homogeneous scattering responses and improved spatial ordering of the Si-based resonators are observed when dewetting is assisted by electron beam lithography. Finally, exploiting different thermal agglomeration regimes, we highlight the versatility of this technique, which, when assisted by focused ion beam nanopatterning, produces monocrystalline nanocrystals with ad hoc size, position, and organization in complex multimers.

  5. Silicon-Chip-Based Optical Frequency Combs

    Science.gov (United States)

    2015-10-26

    fiber-based polarization controllers and a polarization beam splitter , and the output power is monitored with a sensitive photodiode. We use a...a single CW laser beam coupled to a microresonators can produce stabilized, octave-spanning combs through highly cascaded four-wave mixing (FWM...resonator designs , the resonator and the coupling waveguide are monolithically integrated. Thus, the entire on-chip configuration of CMOS-compatible

  6. Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects.

    Science.gov (United States)

    Sun, Shuangxi; Mu, Wei; Edwards, Michael; Mencarelli, Davide; Pierantoni, Luca; Fu, Yifeng; Jeppson, Kjell; Liu, Johan

    2016-08-19

    For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300:1 were obtained. The resistivity of this nanomaterial was found to be as low as ∼10(-8) Ω m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.

  7. Fine pitch and low material readout bus in the Silicon Pixel Vertex Tracker for the PHENIX Vertex Tracker upgrade

    International Nuclear Information System (INIS)

    Fujiwara, Kohei

    2010-01-01

    The construction of the Silicon Pixel Detector is starting in spring 2009 as project of the RHIC-PHENIX Silicon Vertex Tracker (VTX) upgrade at the Brookhaven National Laboratory. For the construction, we have developed a fine pitch and low material readout bus as the backbone parts of the VTX. In this article, we report the development and production of the readout bus.

  8. Novel Non-Carbonate Based Electrolytes for Silicon Anodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Ye [Wildcat Discovery Technologies, San Diego, CA (United States); Yang, Johnny [Wildcat Discovery Technologies, San Diego, CA (United States); Cheng, Gang [Wildcat Discovery Technologies, San Diego, CA (United States); Carroll, Kyler [Wildcat Discovery Technologies, San Diego, CA (United States); Clemons, Owen [Wildcat Discovery Technologies, San Diego, CA (United States); Strand, Diedre [Wildcat Discovery Technologies, San Diego, CA (United States)

    2016-09-09

    Substantial improvement in the energy density of rechargeable lithium batteries is required to meet the future needs for electric and plug-in electric vehicles (EV and PHEV). Present day lithium ion battery technology is based on shuttling lithium between graphitic carbon and inorganic oxides. Non-graphitic anodes, such as silicon can provide significant improvements in energy density but are currently limited in cycle life due to reactivity with the electrolyte. Wildcat/3M proposes the development of non-carbonate electrolyte formulations tailored for silicon alloy anodes. Combining these electrolytes with 3M’s anode and an NMC cathode will enable up to a 20% increase in the volumetric cell energy density, while still meeting the PHEV/EV cell level cycle/calendar life goals.

  9. Angle-resolved diffraction grating biosensor based on porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Changwu; Li, Peng [School of Physical Science and Technology, Xinjiang University, Urumqi 830046 (China); Jia, Zhenhong, E-mail: jzhh@xju.edu.cn; Liu, Yajun; Mo, Jiaqing; Lv, Xiaoyi [College of Information Science and Engineering, Xinjiang University, Urumqi 830046 (China)

    2016-03-07

    In this study, an optical biosensor based on a porous silicon composite structure was fabricated using a simple method. This structure consists of a thin, porous silicon surface diffraction grating and a one-dimensional porous silicon photonic crystal. An angle-resolved diffraction efficiency spectrum was obtained by measuring the diffraction efficiency at a range of incident angles. The angle-resolved diffraction efficiency of the 2nd and 3rd orders was studied experimentally and theoretically. The device was sensitive to the change of refractive index in the presence of a biomolecule indicated by the shift of the diffraction efficiency spectrum. The sensitivity of this sensor was investigated through use of an 8 base pair antifreeze protein DNA hybridization. The shifts of the angle-resolved diffraction efficiency spectrum showed a relationship with the change of the refractive index, and the detection limit of the biosensor reached 41.7 nM. This optical device is highly sensitive, inexpensive, and simple to fabricate. Using shifts in diffraction efficiency spectrum to detect biological molecules has not yet been explored, so this study establishes a foundation for future work.

  10. Electroluminescence efficiencies of erbium in silicon-based hosts

    Energy Technology Data Exchange (ETDEWEB)

    Cueff, Sébastien, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France); School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Manel Ramírez, Joan; Berencén, Yonder; Garrido, Blas [MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain); Kurvits, Jonathan A.; Zia, Rashid [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Rizk, Richard; Labbé, Christophe, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

    2013-11-04

    We report on room-temperature 1.5 μm electroluminescence from trivalent erbium (Er{sup 3+}) ions embedded in three different CMOS-compatible silicon-based hosts: SiO{sub 2}, Si{sub 3}N{sub 4}, and SiN{sub x}. We show that although the insertion of either nitrogen or excess silicon helps enhance electrical conduction and reduce the onset voltage for electroluminescence, it drastically decreases the external quantum efficiency of Er{sup 3+} ions from 2% in SiO{sub 2} to 0.001% and 0.0004% in SiN{sub x} and Si{sub 3}N{sub 4}, respectively. Furthermore, we present strong evidence that hot carrier injection is significantly more efficient than defect-assisted conduction for the electrical excitation of Er{sup 3+} ions. These results suggest strategies to optimize the engineering of on-chip electrically excited silicon-based nanophotonic light sources.

  11. Electrochemical characterization of carbon coated bundle-type silicon nanorod for anode material in lithium ion secondary batteries

    International Nuclear Information System (INIS)

    Halim, Martin; Kim, Jung Sub; Choi, Jeong-Gil; Lee, Joong Kee

    2015-01-01

    Highlights: • Bundle-type silicon nanorods (BSNR) were synthesized by metal assisted chemical etching. • Novel bundle-type nanorods electrode showed self-relaxant characteristics. • The self-relaxant property was enhanced by increasing the silver concentration. • PAA binder enhanced the self-relaxant property of the silicon material. • Carbon coated BSNR (BSNR@C) has evidently provided better cycle performance. - Abstract: Nanostructured silicon synthesis by surface modification of commercial micro-powder silicon was investigated in order to reduce the maximum volume change over cycle. The surface of micro-powder silicon was modified using an Ag metal-assisted chemical etching technique to produce nanostructured material in the form of bundle-type silicon nanorods. The volume change of the electrode using the nanostructured silicon during cycle was investigated using an in-situ dilatometer. Our result shows that nanostructured silicon synthesized using this method showed a self-relaxant characteristic as an anode material for lithium ion battery application. Moreover, binder selection plays a role in enhancing self-relaxant properties during delithiation via strong hydrogen interaction on the surface of the silicon material. The nanostructured silicon was then coated with carbon from propylene gas and showed higher capacity retention with the use of polyacrylic acid (PAA) binder. While the nano-size of the pore diameter control may significantly affect the capacity fading of nanostructured silicon, it can be mitigated via carbon coating, probably due to the prevention of Li ion penetration into 10 nano-meter sized pores

  12. Electrochemical characterization of carbon coated bundle-type silicon nanorod for anode material in lithium ion secondary batteries

    Energy Technology Data Exchange (ETDEWEB)

    Halim, Martin [Center for Energy Convergence, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Energy and Environmental Engineering, Korea University of Science and Technology, Gwahangno, Yuseong-gu, Daejeon, 305-333 (Korea, Republic of); Kim, Jung Sub [Center for Energy Convergence, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Department of Material Science & Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Choi, Jeong-Gil [Department of Chemical Engineering, Hannam University, 461-1 Junmin-dong, Yusung-gu, Taejon 305-811 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Center for Energy Convergence, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Energy and Environmental Engineering, Korea University of Science and Technology, Gwahangno, Yuseong-gu, Daejeon, 305-333 (Korea, Republic of)

    2015-04-15

    Highlights: • Bundle-type silicon nanorods (BSNR) were synthesized by metal assisted chemical etching. • Novel bundle-type nanorods electrode showed self-relaxant characteristics. • The self-relaxant property was enhanced by increasing the silver concentration. • PAA binder enhanced the self-relaxant property of the silicon material. • Carbon coated BSNR (BSNR@C) has evidently provided better cycle performance. - Abstract: Nanostructured silicon synthesis by surface modification of commercial micro-powder silicon was investigated in order to reduce the maximum volume change over cycle. The surface of micro-powder silicon was modified using an Ag metal-assisted chemical etching technique to produce nanostructured material in the form of bundle-type silicon nanorods. The volume change of the electrode using the nanostructured silicon during cycle was investigated using an in-situ dilatometer. Our result shows that nanostructured silicon synthesized using this method showed a self-relaxant characteristic as an anode material for lithium ion battery application. Moreover, binder selection plays a role in enhancing self-relaxant properties during delithiation via strong hydrogen interaction on the surface of the silicon material. The nanostructured silicon was then coated with carbon from propylene gas and showed higher capacity retention with the use of polyacrylic acid (PAA) binder. While the nano-size of the pore diameter control may significantly affect the capacity fading of nanostructured silicon, it can be mitigated via carbon coating, probably due to the prevention of Li ion penetration into 10 nano-meter sized pores.

  13. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  14. Silicon based quantum dot hybrid qubits

    Science.gov (United States)

    Kim, Dohun

    2015-03-01

    The charge and spin degrees of freedom of an electron constitute natural bases for constructing quantum two level systems, or qubits, in semiconductor quantum dots. The quantum dot charge qubit offers a simple architecture and high-speed operation, but generally suffers from fast dephasing due to strong coupling of the environment to the electron's charge. On the other hand, quantum dot spin qubits have demonstrated long coherence times, but their manipulation is often slower than desired for important future applications. This talk will present experimental progress of a `hybrid' qubit, formed by three electrons in a Si/SiGe double quantum dot, which combines desirable characteristics (speed and coherence) in the past found separately in qubits based on either charge or spin degrees of freedom. Using resonant microwaves, we first discuss qubit operations near the `sweet spot' for charge qubit operation. Along with fast (>GHz) manipulation rates for any rotation axis on the Bloch sphere, we implement two independent tomographic characterization schemes in the charge qubit regime: traditional quantum process tomography (QPT) and gate set tomography (GST). We also present resonant qubit operations of the hybrid qubit performed on the same device, DC pulsed gate operations of which were recently demonstrated. We demonstrate three-axis control and the implementation of dynamic decoupling pulse sequences. Performing QPT on the hybrid qubit, we show that AC gating yields π rotation process fidelities higher than 93% for X-axis and 96% for Z-axis rotations, which demonstrates efficient quantum control of semiconductor qubits using resonant microwaves. We discuss a path forward for achieving fidelities better than the threshold for quantum error correction using surface codes. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), DOE (DE-FG02-03ER46028), and by the Laboratory Directed Research and Development program at Sandia National Laboratories

  15. Gold nanorods-silicone hybrid material films and their optical limiting property

    Science.gov (United States)

    Li, Chunfang; Qi, Yanhai; Hao, Xiongwen; Peng, Xue; Li, Dongxiang

    2015-10-01

    As a kind of new optical limiting materials, gold nanoparticles have optical limiting property owing to their optical nonlinearities induced by surface plasmon resonance (SPR). Gold nanorods (GNRs) possess transversal SPR absorption and tunable longitudinal SPR absorption in the visible and near-infrared region, so they can be used as potential optical limiting materials against tunable laser pulses. In this letter, GNRs were prepared using seed-mediated growth method and surface-modified by silica coating to obtain good dispersion in polydimethylsiloxane prepolymers. Then the silicone rubber films doped with GNRs were prepared after vulcanization, whose optical limiting property and optical nonlinearity were investigated. The silicone rubber samples doped with more GNRs were found to exhibit better optical limiting performance.

  16. The Microwave Noise Behaviour Of Dual Material Gate Silicon On Insulator

    Science.gov (United States)

    Jafar, N.; Soin, N.

    2009-06-01

    This work presents the noise behaviour due to the applied Dual Material Gate (DMG) on the 75 nm n-channel Silicon On Insulator (SOI) device operating in the fully depletion mode, particularly for microwave circuit design. Influences of DMG properties namely the gate length ratio (L1:L2) and gate material workfunction difference (ΔΦM) as well as structural and operational parameters which are silicon thickness (TSi) and threshold voltage (VTH) setting variation on the noise performance were carried out on simulation basis using ATLAS 2D. Results show better noise performance in DMG as compare to the standard gate structure of FD-SOI devices. Higher VTH for DMG design is recommended for minimized noise figure in line with the advantage of inverse VTH roll-off characteristics for short channel effects suppression.

  17. Fine defective structure of silicon carbide powders obtained from different starting materials

    Directory of Open Access Journals (Sweden)

    Tomila T.V.

    2006-01-01

    Full Text Available The fine defective structure of silicon carbide powders obtained from silicic acid-saccharose, aerosil-saccharose, aerosil-carbon black, and hydrated cellulose-silicic acid gel systems was investigated. The relation between IR absorption characteristics and the microstructure of SiC particles obtained from different starting materials was established. The numerical relationship between the lattice parameter a and the frequency νTO is presented.

  18. Influence of ion bombardment on microcrystalline silicon material quality and solar cell performances

    OpenAIRE

    Bugnon, G; Feltrin, A; Sculati-Meillaud, F; Bailat, J; Ballif, C

    2008-01-01

    Microcrystalline hydrogenated silicon growth with VHF-PECVD was examined in an industrial type parallel plate KAITM reactor. The influence of pressure on material quality was studied in single junction solar cells. Solar cells with their intrinsic layer prepared at higher pressures exhibit remarkable improvements, reaching 8.2% efficiency at 3.5 mbar. Further analyzes showed that μc- Si:H intrinsic layers grown at higher pressures have a significantly lower defect density. These results are a...

  19. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  20. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Science.gov (United States)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system

  1. Development of a Silicon Based Electron Beam Transmission Window for Use in a KrF Excimer Laser System

    International Nuclear Information System (INIS)

    Gentile, C.A.; Fan, H.M.; Hartfield, J.W.; Hawryluk, R.J.; Hegeler, F.; Heitzenroeder, P.J.; Jun, C.H.; Ku, L.P.; LaMarche, P.H.; Myers, M.C.; Parker, J.J.; Parsells, R.F.; Payen, M.; Raftopoulos, S.; Sethian, J.D.

    2002-01-01

    The Princeton Plasma Physics Laboratory (PPPL), in collaboration with the Naval Research Laboratory (NRL), is currently investigating various novel materials (single crystal silicon, , and ) for use as electron-beam transmission windows in a KrF excimer laser system. The primary function of the window is to isolate the active medium (excimer gas) from the excitation mechanism (field-emission diodes). Chosen window geometry must accommodate electron energy transfer greater than 80% (750 keV), while maintaining structural integrity during mechanical load (1.3 to 2.0 atm base pressure differential, approximate 0.5 atm cyclic pressure amplitude, 5 Hz repetition rate) and thermal load across the entire hibachi area (approximate 0.9 W · cm superscript ''-2''). In addition, the window must be chemically resistant to attack by fluorine free-radicals (hydrofluoric acid, secondary). In accordance with these structural, functional, and operational parameters, a 22.4 mm square silicon prototype window, coated with 500 nm thin-film silicon nitride (Si 3 N 4 ), has been fabricated. The window consists of 81 square panes with a thickness of 0.019 mm ± 0.001 mm. Stiffened (orthogonal) sections are 0.065 mm in width and 0.500 mm thick (approximate). Appended drawing (Figure 1) depicts the window configuration. Assessment of silicon (and silicon nitride) material properties and CAD modeling and analysis of the window design suggest that silicon may be a viable solution to inherent parameters and constraints

  2. Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Liew, Pay Jun [Department of Mechanical Systems and Design, Tohoku University, Aramaki Aoba 6-6-01, Aoba-ku, Sendai, 980-8579 (Japan); Manufacturing Process Department, Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100, Durian Tunggal, Melaka (Malaysia); Yan, Jiwang, E-mail: yan@mech.keio.ac.jp [Department of Mechanical Engineering, Faculty of Science and Technology, Keio University, Hiyoshi 3-14-1, Kohoku-ku, Yokohama, 223-8522 (Japan); Kuriyagawa, Tsunemoto [Department of Mechanical Systems and Design, Tohoku University, Aramaki Aoba 6-6-01, Aoba-ku, Sendai, 980-8579 (Japan)

    2013-07-01

    Material migration between tool electrode and workpiece material in micro electrical discharge machining of reaction-bonded silicon carbide was experimentally investigated. The microstructural changes of workpiece and tungsten tool electrode were examined using scanning electron microscopy, cross sectional transmission electron microscopy and energy dispersive X-ray under various voltage, capacitance and carbon nanofibre concentration in the dielectric fluid. Results show that tungsten is deposited intensively inside the discharge-induced craters on the RB-SiC surface as amorphous structure forming micro particles, and on flat surface region as a thin interdiffusion layer of poly-crystalline structure. Deposition of carbon element on tool electrode was detected, indicating possible material migration to the tool electrode from workpiece material, carbon nanofibres and dielectric oil. Material deposition rate was found to be strongly affected by workpiece surface roughness, voltage and capacitance of the electrical discharge circuit. Carbon nanofibre addition in the dielectric at a suitable concentration significantly reduced the material deposition rate.

  3. Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide

    International Nuclear Information System (INIS)

    Liew, Pay Jun; Yan, Jiwang; Kuriyagawa, Tsunemoto

    2013-01-01

    Material migration between tool electrode and workpiece material in micro electrical discharge machining of reaction-bonded silicon carbide was experimentally investigated. The microstructural changes of workpiece and tungsten tool electrode were examined using scanning electron microscopy, cross sectional transmission electron microscopy and energy dispersive X-ray under various voltage, capacitance and carbon nanofibre concentration in the dielectric fluid. Results show that tungsten is deposited intensively inside the discharge-induced craters on the RB-SiC surface as amorphous structure forming micro particles, and on flat surface region as a thin interdiffusion layer of poly-crystalline structure. Deposition of carbon element on tool electrode was detected, indicating possible material migration to the tool electrode from workpiece material, carbon nanofibres and dielectric oil. Material deposition rate was found to be strongly affected by workpiece surface roughness, voltage and capacitance of the electrical discharge circuit. Carbon nanofibre addition in the dielectric at a suitable concentration significantly reduced the material deposition rate.

  4. Bacterial adhesion to conventional hydrogel and new silicone-hydrogel contact lens materials.

    Science.gov (United States)

    Kodjikian, Laurent; Casoli-Bergeron, Emmanuelle; Malet, Florence; Janin-Manificat, Hélène; Freney, Jean; Burillon, Carole; Colin, Joseph; Steghens, Jean-Paul

    2008-02-01

    As bacterial adhesion to contact lenses may contribute to the pathogenesis of keratitis, the aim of our study was to investigate in vitro adhesion of clinically relevant bacteria to conventional hydrogel (standard HEMA) and silicone-hydrogel contact lenses using a bioluminescent ATP assay. Four types of unworn contact lenses (Etafilcon A, Galyfilcon A, Balafilcon A, Lotrafilcon B) were incubated with Staphylococcus epidermidis (two different strains) and Pseudomonas aeruginosa suspended in phosphate buffered saline (PBS). Lenses were placed with the posterior surface facing up and were incubated in the bacterial suspension for 4 hours at 37 degrees C. Bacterial binding was then measured and studied by bioluminescent ATP assay. Six replicate experiments were performed for each lens and strain. Adhesion of all species of bacteria to standard HEMA contact lenses (Etafilcon A) was found to be significantly lower than that of three types of silicone-hydrogel contact lenses, whereas Lotrafilcon B material showed the highest level of bacterial binding. Differences between species in the overall level of adhesion to the different types of contact lenses were observed. Adhesion of P. aeruginosa was typically at least 20 times greater than that observed with both S. epidermidis strains. Conventional hydrogel contact lenses exhibit significantly lower bacterial adhesion in vitro than silicone-hydrogel ones. This could be due to the greater hydrophobicity but also to the higher oxygen transmissibility of silicone-hydrogel lenses.

  5. Trace elements determination in silicon and ferrosilicon reference materials by instrumental neutron activation analysis method

    International Nuclear Information System (INIS)

    Moreira, Edson Goncalves; Vasconcellos, Marina Beatriz Agostini; Saiki, Mitiko; Iamashita, Celia Omine

    2002-01-01

    The use of certified reference materials, CRM, is of uppermost importance in the rastreability realization of the measurement process. At times, CRM use is restricted by the non existence of a suitable CRM with similarity to the sample in respect to matrix composition or with element levels in different orders of magnitude. IPT Chemical Division launched a project to prepare a metallic silicon CRM, due to the requirements of the industries in this field. To characterize this new CRM, IPEN Nuclear Reactor Center is able to perform instrumental neutron activation analysis, INAA, a very suitable method for silicon matrix samples because they produce basically the short lived radionuclide 3 1 Si under thermal neutrons flux, which after radioactive decay, does not interfere in the determination of other elements. In this paper, it is presented the determination of As, Br, Co, Cr, K, Eu, Fe, La, Mn, Na Nb, Sb, Sm, Sc, Th, Tb, U, V, W and Yb in silicon CRM NBS SRM 57; ferrosilicon CRM IPT 56; IPT 70; NBS SRM 58a; NBS SRM 59a and silicon RM under preparation IPT 132. From the results, the accuracy and the precision of the process were assessed. (author)

  6. [Influence of autoclave sterilization on dimensional stability and detail reproduction of 5 additional silicone impression materials].

    Science.gov (United States)

    Xu, Tong-kai; Sun, Zhi-hui; Jiang, Yong

    2012-03-01

    To evaluate the dimensional stability and detail reproduction of five additional silicone impression materials after autoclave sterilization. Impressions were made on the ISO 4823 standard mold containing several marking lines, in five kinds of additional silicone. All the impressions were sterilized by high temperature and pressure (135 °C, 212.8 kPa) for 25 min. Linear measurements of pre-sterilization and post-sterilization were made with a measuring microscope. Statistical analysis utilized single-factor analysis with pair-wise comparison of mean values when appropriate. Hypothesis testing was conducted at alpha = 0.05. No significant difference was found between the pre-sterilization and post-sterilization conditions for all locations, and all the absolute valuse of linear rate of change less than 8%. All the sterilization by the autoclave did not affect the surfuce detail reproduction of the 5 impression materials. The dimensional stability and detail reproduction of the five additional silicone impression materials in the study was unaffected by autoclave sterilization.

  7. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    Energy Technology Data Exchange (ETDEWEB)

    Czapski, M., E-mail: michal.czapski@cern.ch [CERN, Genève 23 CH-1211 (Switzerland); Stora, T. [CERN, Genève 23 CH-1211 (Switzerland); Tardivat, C.; Deville, S. [Lab. de Synthèse et Fonctionnalisation des Céramiques, CNRS/Saint-Gobain, Av. Jauffret 84306 Cavaillon (France); Santos Augusto, R. [CERN, Genève 23 CH-1211 (Switzerland); Leloup, J.; Bouville, F. [Lab. de Synthèse et Fonctionnalisation des Céramiques, CNRS/Saint-Gobain, Av. Jauffret 84306 Cavaillon (France); Fernandes Luis, R. [Univ. Técnica de Lisboa Estrada Nacional 10, 2686-953 Sacavem, Loures (Portugal)

    2013-12-15

    Highlights: • SiC and Al{sub 2}O{sub 3} of uniaxial porosity were produced with ice-templating method. • The method allows controlled pore formation within the material. • Calculation of mechanical integrity under irradiation with protons was performed. • Generated thermal stresses should not exceed material’s strength. -- Abstract: New silicon carbide (SiC) and aluminum oxide (Al{sub 2}O{sub 3}) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

  8. Towards highly sensitive strain sensing based on nanostructured materials

    International Nuclear Information System (INIS)

    Dao, Dzung Viet; Nakamura, Koichi; Sugiyama, Susumu; Bui, Tung Thanh; Dau, Van Thanh; Yamada, Takeo; Hata, Kenji

    2010-01-01

    This paper presents our recent theoretical and experimental study of piezo-effects in nanostructured materials for highly sensitive, high resolution mechanical sensors. The piezo-effects presented here include the piezoresistive effect in a silicon nanowire (SiNW) and single wall carbon nanotube (SWCNT) thin film, as well as the piezo-optic effect in a Si photonic crystal (PhC) nanocavity. Firstly, the electronic energy band structure of the silicon nanostructure is discussed and simulated by using the First-Principles Calculations method. The result showed a remarkably different energy band structure compared with that of bulk silicon. This difference in the electronic state will result in different physical, chemical, and therefore, sensing properties of silicon nanostructures. The piezoresistive effects of SiNW and SWCNT thin film were investigated experimentally. We found that, when the width of ( 110 ) p-type SiNW decreases from 500 to 35 nm, the piezoresistive effect increases by more than 60%. The longitudinal piezoresistive coefficient of SWCNT thin film was measured to be twice that of bulk p-type silicon. Finally, theoretical investigations of the piezo-optic effect in a PhC nanocavity based on Finite Difference Time Domain (FDTD) showed extremely high resolution strain sensing. These nanostructures were fabricated based on top-down nanofabrication technology. The achievements of this work are significant for highly sensitive, high resolution and miniaturized mechanical sensors

  9. Dissolution chemistry and biocompatibility of single-crystalline silicon nanomembranes and associated materials for transient electronics.

    Science.gov (United States)

    Hwang, Suk-Won; Park, Gayoung; Edwards, Chris; Corbin, Elise A; Kang, Seung-Kyun; Cheng, Huanyu; Song, Jun-Kyul; Kim, Jae-Hwan; Yu, Sooyoun; Ng, Joanne; Lee, Jung Eun; Kim, Jiyoung; Yee, Cassian; Bhaduri, Basanta; Su, Yewang; Omennetto, Fiorenzo G; Huang, Yonggang; Bashir, Rashid; Goddard, Lynford; Popescu, Gabriel; Lee, Kyung-Mi; Rogers, John A

    2014-06-24

    Single-crystalline silicon nanomembranes (Si NMs) represent a critically important class of material for high-performance forms of electronics that are capable of complete, controlled dissolution when immersed in water and/or biofluids, sometimes referred to as a type of "transient" electronics. The results reported here include the kinetics of hydrolysis of Si NMs in biofluids and various aqueous solutions through a range of relevant pH values, ionic concentrations and temperatures, and dependence on dopant types and concentrations. In vitro and in vivo investigations of Si NMs and other transient electronic materials demonstrate biocompatibility and bioresorption, thereby suggesting potential for envisioned applications in active, biodegradable electronic implants.

  10. Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

    Science.gov (United States)

    Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

    2013-01-22

    Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

  11. Educational Process Material Base

    OpenAIRE

    Olga Ozerova; Irina Zabaturina; Vera Kuznetsova; Galina Kovaleva

    2012-01-01

    Based on the data obtained by the Institute for Statistical Studies and the Economics of Knowledge, National Research University - Higher School of Economics Olga Ozerova - Head of the Department for Statistics of Education, Institute for Statistical Studies and the Economics of Knowledge, National Research University - Higher School of Economics, Moscow, Russian Federation. Email: Address: 18 Myasnitskaya St., Moscow, 101000, Russian Federation.Irina Zabaturina - senior resea...

  12. Signals from fluorescent materials on the surface of silicon micro-strip sensors

    CERN Document Server

    Sperlich, Dennis; The ATLAS collaboration

    2017-01-01

    For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker. In order to minimise the amount of material in the detector, circuit boards with readout electronics will be glued on to the active area of the sensor. Several adhesives investigated to be used for the construction of detector modules were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high- radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By pointing the beam both inside the sensor and parallel to the sensor surface, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibility of silicon strip sensors to light contamination from fluorescent mate...

  13. Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

    Czech Academy of Sciences Publication Activity Database

    Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, Ch.; Debrot, F.; Niquille, X.; Ledinský, Martin; Fejfar, Antonín; Despeisse, M.; Haug, F.J.; Löper, P.; Ballif, C.

    2016-01-01

    Roč. 158, Dec (2016), s. 2-10 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.784, year: 2016

  14. Nanostructured 2D cellular materials in silicon by sidewall transfer lithography NEMS

    Science.gov (United States)

    Syms, Richard R. A.; Liu, Dixi; Ahmad, Munir M.

    2017-07-01

    Sidewall transfer lithography (STL) is demonstrated as a method for parallel fabrication of 2D nanostructured cellular solids in single-crystal silicon. The linear mechanical properties of four lattices (perfect and defected diamond; singly and doubly periodic honeycomb) with low effective Young’s moduli and effective Poisson’s ratio ranging from positive to negative are modelled using analytic theory and the matrix stiffness method with an emphasis on boundary effects. The lattices are fabricated with a minimum feature size of 100 nm and an aspect ratio of 40:1 using single- and double-level STL and deep reactive ion etching of bonded silicon-on-insulator. Nanoelectromechanical systems (NEMS) containing cellular materials are used to demonstrate stretching, bending and brittle fracture. Predicted edge effects are observed, theoretical values of Poisson’s ratio are verified and failure patterns are described.

  15. Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

    Science.gov (United States)

    Dumas, K. A.; Swimm, R. T.

    1980-01-01

    Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

  16. Effect of calcium/silicon ratio on retention of uranium (VI) in portland cement materials

    International Nuclear Information System (INIS)

    Tan Hongbin; Li Yuxiang

    2005-01-01

    Calcium silicate hydrate (CSH) materials of varied calcium to silicon (Ca/Si) ratios were prepared by hydrothermal synthesis at 80 degree C, with calcium oxide and micro-silicon employed. These products were determined to be of gel phase by XRD. Leaching tests with 1% hydrochloric acid indicated that more Uranium (VI) was detained by CSH with lower Ca/Si ratios. Alkali-activated slag cement (with a lower Ca/Si ratio) was found to have a stronger retention capacity than Portland cement (with a higher Ca/Si ratio), at 25 degree C in 102-days leaching tests with simulated solidified forms containing Uranium (VI). The accumulative leaching fraction of Uranium (VI) for Alkali-activated slag cement solidified forms is 17.6% lower than that for Portland cement. The corresponding difference of diffusion coefficients is 40.6%. This could be correlated with the difference of Ca/Si ratios between cements of two kinds. (authors)

  17. Device and material characterization and analytic modeling of amorphous silicon thin film transistors

    Science.gov (United States)

    Slade, Holly Claudia

    Hydrogenated amorphous silicon thin film transistors (TFTs) are now well-established as switching elements for a variety of applications in the lucrative electronics market, such as active matrix liquid crystal displays, two-dimensional imagers, and position-sensitive radiation detectors. These applications necessitate the development of accurate characterization and simulation tools. The main goal of this work is the development of a semi- empirical, analytical model for the DC and AC operation of an amorphous silicon TFT for use in a manufacturing facility to improve yield and maintain process control. The model is physically-based, in order that the parameters scale with gate length and can be easily related back to the material and device properties. To accomplish this, extensive experimental data and 2D simulations are used to observe and quantify non- crystalline effects in the TFTs. In particular, due to the disorder in the amorphous network, localized energy states exist throughout the band gap and affect all regimes of TFT operation. These localized states trap most of the free charge, causing a gate-bias-dependent field effect mobility above threshold, a power-law dependence of the current on gate bias below threshold, very low leakage currents, and severe frequency dispersion of the TFT gate capacitance. Additional investigations of TFT instabilities reveal the importance of changes in the density of states and/or back channel conduction due to bias and thermal stress. In the above threshold regime, the model is similar to the crystalline MOSFET model, considering the drift component of free charge. This approach uses the field effect mobility to take into account the trap states and must utilize the correct definition of threshold voltage. In the below threshold regime, the density of deep states is taken into account. The leakage current is modeled empirically, and the parameters are temperature dependent to 150oC. The capacitance of the TFT can be

  18. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Directory of Open Access Journals (Sweden)

    Yulong Zhang

    2018-05-01

    Full Text Available High performance silicon combined structure (micropillar with Cu nanoparticles solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  19. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Science.gov (United States)

    Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

    2018-05-01

    High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  20. Tin - an unlikely ally for silicon field effect transistors?

    KAUST Repository

    Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo T.; Schwingenschlö gl, Udo; Hussain, Muhammad Mustafa

    2014-01-01

    We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows

  1. Silicon nanowire based high brightness, pulsed relativistic electron source

    Directory of Open Access Journals (Sweden)

    Deep Sarkar

    2017-06-01

    Full Text Available We demonstrate that silicon nanowire arrays efficiently emit relativistic electron pulses under irradiation by a high-intensity, femtosecond, and near-infrared laser (∼1018 W/cm2, 25 fs, 800 nm. The nanowire array yields fluxes and charge per bunch that are 40 times higher than those emitted by an optically flat surface, in the energy range of 0.2–0.5 MeV. The flux and charge yields for the nanowires are observed to be directional in nature unlike that for planar silicon. Particle-in-cell simulations establish that such large emission is caused by the enhancement of the local electric fields around a nanowire, which consequently leads to an enhanced absorption of laser energy. We show that the high-intensity contrast (ratio of picosecond pedestal to femtosecond peak of the laser pulse (10−9 is crucial to this large yield. We extend the notion of surface local-field enhancement, normally invoked in low-order nonlinear optical processes like second harmonic generation, optical limiting, etc., to ultrahigh laser intensities. These electron pulses, expectedly femtosecond in duration, have potential application in imaging, material modification, ultrafast dynamics, terahertz generation, and fast ion sources.

  2. Acetic and Acrylic Acid Molecular Imprinted Model Silicone Hydrogel Materials for Ciprofloxacin-HCl Delivery

    Directory of Open Access Journals (Sweden)

    Lyndon Jones

    2012-01-01

    Full Text Available Contact lenses, as an alternative drug delivery vehicle for the eye compared to eye drops, are desirable due to potential advantages in dosing regimen, bioavailability and patient tolerance/compliance. The challenge has been to engineer and develop these materials to sustain drug delivery to the eye for a long period of time. In this study, model silicone hydrogel materials were created using a molecular imprinting strategy to deliver the antibiotic ciprofloxacin. Acetic and acrylic acid were used as the functional monomers, to interact with the ciprofloxacin template to efficiently create recognition cavities within the final polymerized material. Synthesized materials were loaded with 9.06 mM, 0.10 mM and 0.025 mM solutions of ciprofloxacin, and the release of ciprofloxacin into an artificial tear solution was monitored over time. The materials were shown to release for periods varying from 3 to 14 days, dependent on the loading solution, functional monomer concentration and functional monomer:template ratio, with materials with greater monomer:template ratio (8:1 and 16:1 imprinted tending to release for longer periods of time. Materials with a lower monomer:template ratio (4:1 imprinted tended to release comparatively greater amounts of ciprofloxacin into solution, but the release was somewhat shorter. The total amount of drug released from the imprinted materials was sufficient to reach levels relevant to inhibit the growth of common ocular isolates of bacteria. This work is one of the first to demonstrate the feasibility of molecular imprinting in model silicone hydrogel-type materials.

  3. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  4. Polyphosphazine-based polymer materials

    Science.gov (United States)

    Fox, Robert V.; Avci, Recep; Groenewold, Gary S.

    2010-05-25

    Methods of removing contaminant matter from porous materials include applying a polymer material to a contaminated surface, irradiating the contaminated surface to cause redistribution of contaminant matter, and removing at least a portion of the polymer material from the surface. Systems for decontaminating a contaminated structure comprising porous material include a radiation device configured to emit electromagnetic radiation toward a surface of a structure, and at least one spray device configured to apply a capture material onto the surface of the structure. Polymer materials that can be used in such methods and systems include polyphosphazine-based polymer materials having polyphosphazine backbone segments and side chain groups that include selected functional groups. The selected functional groups may include iminos, oximes, carboxylates, sulfonates, .beta.-diketones, phosphine sulfides, phosphates, phosphites, phosphonates, phosphinates, phosphine oxides, monothio phosphinic acids, and dithio phosphinic acids.

  5. Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

    Science.gov (United States)

    Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

    1978-01-01

    Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

  6. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    International Nuclear Information System (INIS)

    Yin, Lan; Harburg, Daniel V.; Rogers, John A.; Bozler, Carl; Omenetto, Fiorenzo

    2015-01-01

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems

  7. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Lan; Harburg, Daniel V.; Rogers, John A., E-mail: jrogers@illinois.edu [Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S Goodwin Ave., Urbana, Illinois 61801 (United States); Bozler, Carl [Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420 (United States); Omenetto, Fiorenzo [Department of Biomedical Engineering, Department of Physics, Tufts University, 4 Colby St., Medford, Massachusetts 02155 (United States)

    2015-01-05

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  8. Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

    Science.gov (United States)

    Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

    2018-02-01

    We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

  9. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

    Science.gov (United States)

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  10. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

    Science.gov (United States)

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  11. A small animal PET prototype based on Silicon Photomultipliers

    International Nuclear Information System (INIS)

    Marcatili, S; Belcari, N.; Bisogni, M.G.; Del Guerra, A.; Collazuol, G.; Pedreschi, E.; Spinella, F.; Sportelli, G.; Marzocca, C.

    2011-01-01

    Next generation PET scanners should full fill very high requirements in terms of spatial, energy and timing resolution. Modern scanner performances are inherently limited by the use of standard photomultiplier tubes. The use of Silicon Photomultiplier (Si P M) matrices is proposed for the construction of a small animal PET system consisting of two detector heads based on Lyso continuos crystals. The use of large area multi-pixel Silicon Photomultiplier (Si P M) detectors requires the development of a multichannel Digital Acquisition system (DAQ) as well as of a dedicated front-end in order not to degrade the intrinsic detector capabilities. At the University of Pisa and INFN Pisa we developed a DAQ board for the read-out of 2 64-pixel Si P M matrices in time coincidence for Positron Emission Tomography (PET) applications. The proof of principles is based on 64-pixel detectors, but the whole system has been conceived to be easily scalable to a higher number of channels. Here we describe the Group-V INFN DASi P M 2 (Development and Application of Si P M) project and related results.

  12. Silicon Micropore-Based Parallel Plate Membrane Oxygenator.

    Science.gov (United States)

    Dharia, Ajay; Abada, Emily; Feinberg, Benjamin; Yeager, Torin; Moses, Willieford; Park, Jaehyun; Blaha, Charles; Wright, Nathan; Padilla, Benjamin; Roy, Shuvo

    2018-02-01

    Extracorporeal membrane oxygenation (ECMO) is a life support system that circulates the blood through an oxygenating system to temporarily (days to months) support heart or lung function during cardiopulmonary failure until organ recovery or replacement. Currently, the need for high levels of systemic anticoagulation and the risk for bleeding are main drawbacks of ECMO that can be addressed with a redesigned ECMO system. Our lab has developed an approach using microelectromechanical systems (MEMS) fabrication techniques to create novel gas exchange membranes consisting of a rigid silicon micropore membrane (SμM) support structure bonded to a thin film of gas-permeable polydimethylsiloxane (PDMS). This study details the fabrication process to create silicon membranes with highly uniform micropores that have a high level of pattern fidelity. The oxygen transport across these membranes was tested in a simple water-based bench-top set-up as well in a porcine in vivo model. It was determined that the mass transfer coefficient for the system using SµM-PDMS membranes was 3.03 ± 0.42 mL O 2 min -1 m -2 cm Hg -1 with pure water and 1.71 ± 1.03 mL O 2 min -1 m -2 cm Hg -1 with blood. An analytic model to predict gas transport was developed using data from the bench-top experiments and validated with in vivo testing. This was a proof of concept study showing adequate oxygen transport across a parallel plate SµM-PDMS membrane when used as a membrane oxygenator. This work establishes the tools and the equipoise to develop future generations of silicon micropore membrane oxygenators. © 2017 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

  13. Novel detectors for silicon based microdosimetry, their concepts and applications

    Science.gov (United States)

    Rosenfeld, Anatoly B.

    2016-02-01

    This paper presents an overview of the development of semiconductor microdosimetry and the most current (state-of-the-art) Silicon on Insulator (SOI) detectors for microdosimetry based mainly on research and development carried out at the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong with collaborators over the last 18 years. In this paper every generation of CMRP SOI microdosimeters, including their fabrication, design, and electrical and charge collection characterisation are presented. A study of SOI microdosimeters in various radiation fields has demonstrated that under appropriate geometrical scaling, the response of SOI detectors with the well-known geometry of microscopically sensitive volumes will record the energy deposition spectra representative of tissue cells of an equivalent shape. This development of SOI detectors for microdosimetry with increased complexity has improved the definition of microscopic sensitive volume (SV), which is modelling the deposition of ionising energy in a biological cell, that are led from planar to 3D SOI detectors with an array of segmented microscopic 3D SVs. The monolithic ΔE-E silicon telescope, which is an alternative to the SOI silicon microdosimeter, is presented, and as an example, applications of SOI detectors and ΔE-E monolithic telescope for microdosimetery in proton therapy field and equivalent neutron dose measurements out of field are also presented. An SOI microdosimeter "bridge" with 3D SVs can derive the relative biological effectiveness (RBE) in 12C ion radiation therapy that matches the tissue equivalent proportional counter (TEPC) quite well, but with outstanding spatial resolution. The use of SOI technology in experimental microdosimetry offers simplicity (no gas system or HV supply), high spatial resolution, low cost, high count rates, and the possibility of integrating the system onto a single device with other types of detectors.

  14. Intensifying the Casimir force between two silicon substrates within three different layers of materials

    International Nuclear Information System (INIS)

    Seyedzahedi, A.; Moradian, A.; Setare, M.R.

    2016-01-01

    We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water–lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO 2 , mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

  15. Intensifying the Casimir force between two silicon substrates within three different layers of materials

    Energy Technology Data Exchange (ETDEWEB)

    Seyedzahedi, A. [Department of Science, University of Kurdistan, Sanandaj (Iran, Islamic Republic of); Moradian, A., E-mail: a.moradian@uok.ac.ir [Department of Science, Campus of Bijar, University of Kurdistan, Bijar (Iran, Islamic Republic of); Setare, M.R., E-mail: rezakord@ipm.ir [Department of Science, University of Kurdistan, Sanandaj (Iran, Islamic Republic of)

    2016-04-01

    We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water–lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO{sub 2}, mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

  16. Design and evaluation of carbon nanofiber and silicon materials for neural implant applications

    Science.gov (United States)

    McKenzie, Janice L.

    Reduction of glial scar tissue around central nervous system implants is necessary for improved efficacy in chronic applications. Design of materials that possess tunable properties inspired by native biological tissue and elucidation of pertinent cellular interactions with these materials was the motivation for this study. Since nanoscale carbon fibers possess the fundamental dimensional similarities to biological tissue and have attractive material properties needed for neural biomaterial implants, this present study explored cytocompatibility of these materials as well as modifications to traditionally used silicon. On silicon materials, results indicated that nanoscale surface features reduced astrocyte functions, and could be used to guide neurite extension from PC12 cells. Similarly, it was determined that astrocyte functions (key cells in glial scar tissue formation) were reduced on smaller diameter carbon fibers (125 nm or less) while PC12 neurite extension was enhanced on smaller diameter carbon fibers (100 nm or less). Further studies implicated laminin adsorption as a key mechanism in enhancing astrocyte adhesion to larger diameter fibers and at the same time encouraging neurite extension on smaller diameter fibers. Polycarbonate urethane (PCU) was then used as a matrix material for the smaller diameter carbon fibers (100 and 60 nm). These composites proved very versatile since electrical and mechanical properties as well as cell functions and directionality could be influenced by changing bulk and surface composition and features of these matrices. When these composites were modified to be smooth at the micronscale and only rough at the nanoscale, P19 cells actually submerged philopodia, extensions, or whole cells bodies beneath the PCU in order to interact with the carbon nanofibers. These carbon nanofiber composites that have been formulated are a promising material to coat neural probes and thereby enhance functionality at the tissue interface. This

  17. X-Ray Researches GF Siliconized Materials on Pyrocarbon Sheaf and on the Basis of Graphite of Mark EG-0

    International Nuclear Information System (INIS)

    Gurin, V.A.; Gurin, I.V.; Kovtun, G.P.; Malykhin, D.G.; Bukolov, A.N.

    2005-01-01

    A methodological addition to a quantitative analysis of binary phase structure of materials on measurements of X-ray lines intensities worked out conformably to research of siliconized graphitic materials. Distinctions in X-rays absorption factors of phase components at a various degree of phases mixture are taken into account. An apparatus of the probability theory is applied. A parameter of mixture degree of phases is submitted as a specific area size of interphase. Quantitative X-ray researches of a phase structure of siliconized materials are carried out on the basis of carbon fabrics and graphitic powders; both were sheafed by pyrocarbon. In examined samples structures C-SiC and SiC-Si were obtained. The correlation of the phase structure of materials with the apparent density of the initial carbon basis is seen. The opportunity of a practical obtaining of materials with the host degree of their siliconizing is confirmed

  18. Novel scalable silicone elastomer and poly(2-hydroxyethyl methacrylate) (PHEMA) composite materials for tissue engineering and drug delivery applications

    DEFF Research Database (Denmark)

    Mohanty, Soumyaranjan; Hemmingsen, Mette; Wojcik, Magdalena

    2013-01-01

    material with increased hydrophilicity in regard to virgin silicone elastomer, making it suitable as a scaffold for tissue engineering and with the concomitant possibility for delivering drug from the scaffold to the tissue. Interpenetrating polymer networks (IPNs) of silicone elastomer and PHEMA......In recent years hydrogels have received increasing attention as potential materials for applications in regenerative medicine. They can be used for scaffold materials providing structural integrity to tissue constructs, for controlled delivery of drugs and proteins to cell and tissues......, and for support materials in tissue growth. However, the real challenge is to obtain sufficiently good mechanical properties of the hydrogel. The present study shows the combination of two normally non-compatible materials, silicone elastomer and poly(2-hydroxyethyl methacrylate) (PHEMA), into a novel composite...

  19. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  20. Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions

    International Nuclear Information System (INIS)

    Kramberger, G.; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

    2010-01-01

    A set of 44 pad detectors produced on p- and n-type MCz and Fz wafers was irradiated with 23 GeV protons, 200 MeV pions and reactor neutrons up to the equivalent fluences of Φ eq =3x10 15 cm -2 . The evolution of the full depletion voltage and the leakage current were monitored during short- and long-term annealing. At selected representative annealing steps, charge collection measurements were performed for all samples with LHC speed electronics. Measurements of full depletion voltage, leakage current and charge collection efficiency were compared for different irradiation particles and silicon materials.

  1. Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions

    Energy Technology Data Exchange (ETDEWEB)

    Kramberger, G., E-mail: Gregor.Kramberger@ijs.s [Jozef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana (Slovenia); Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M. [Jozef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana (Slovenia)

    2010-01-01

    A set of 44 pad detectors produced on p- and n-type MCz and Fz wafers was irradiated with 23 GeV protons, 200 MeV pions and reactor neutrons up to the equivalent fluences of PHI{sub eq}=3x10{sup 15}cm{sup -2}. The evolution of the full depletion voltage and the leakage current were monitored during short- and long-term annealing. At selected representative annealing steps, charge collection measurements were performed for all samples with LHC speed electronics. Measurements of full depletion voltage, leakage current and charge collection efficiency were compared for different irradiation particles and silicon materials.

  2. Current and future priorities for mass and material in silicon PV module recycling

    Energy Technology Data Exchange (ETDEWEB)

    Olson, C.L.; Geerligs, L.J.; Goris, M.J.A.A.; Bennett, I.J. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands); Clyncke, J. [PV CYCLE, Rue Montoyer 23, 1000 Brussels (Belgium)

    2013-10-15

    A full description of the state-of-the-art PV recycling methods and their rationale is presented, which discusses the quality of the recycled materials and the fate of the substances which end up in the landfill. The aim is to flag the PV module components currently not recycled, which may have a priority in terms of their embedded energy, chemical nature or scarcity, for the next evolution of recycling. The sustainability of different recycling options, emerging in the literature on electronic waste recycling, and the possible improvement of the environmental footprint of silicon PV modules, will be discussed.

  3. Determination of silicon in biological and botanical reference materials by epithermal INAA and Compton suppression

    International Nuclear Information System (INIS)

    Landsberger, S.; Peshev, S.; Becker, D.A.

    1994-01-01

    Silicon determination in sixteen botanical and biological standard reference materials is described using the 29 Si(n, p) 29 Al reaction through instrumental epithermal neutron activation analysis and Compton suppression gamma-ray spectroscopy. By simultaneous utilization of both cadmium and boron epithermal filters along with anticoincidence gamma-counting, detection limits as low as 12 ppm were obtained for certain matrices, much lower than previously reported values for this type of analysis. The method is applicable to many botanical and biological matrices and is attractive with its interference free, purely instrumental nature, compared with methods using the 28 Si(n, p) 28 Al reaction or chemical separation techniques. ((orig.))

  4. Effect of Projectile Materials on Foreign Object Damage of a Gas-Turbine Grade Silicon Nitride

    Science.gov (United States)

    Choi, Sung R.; Racz, Zsolt; Bhatt, Ramakrishna T.; Brewer, David N.; Gyekenyesi, John P.

    2005-01-01

    Foreign object damage (FOD) behavior of AS800 silicon nitride was determined using four different projectile materials at ambient temperature. The target test specimens rigidly supported were impacted at their centers by spherical projectiles with a diameter of 1.59 mm. Four different types of projectiles were used including hardened steel balls, annealed steel balls, silicon nitride balls, and brass balls. Post-impact strength of each target specimen impacted was determined as a function of impact velocity to better understand the severity of local impact damage. The critical impact velocity where target specimens fail upon impact was highest with brass balls, lowest with ceramic ball, and intermediate with annealed and hardened steel balls. Degree of strength degradation upon impact followed the same order as in the critical impact velocity with respect to projectile materials. For steel balls, hardened projectiles yielded more significant impact damage than annealed counterparts. The most important material parameter affecting FOD was identified as hardness of projectiles and was correlated in terms of critical impact velocity, impact deformation, and impact load.

  5. Characterization of silicon sensor materials and designs for the CMS Tracker Upgrade

    CERN Document Server

    Dierlamm, Alexander Hermann

    2012-01-01

    During the high luminosity phase of the LHC (HL-LHC, starting around 2020) the inner tracking system of CMS will be exposed to harsher conditions than the current system was designed for. Therefore a new tracker is planned to cope with higher radiation levels and higher occupancies. Within the strip sensor developments of CMS a comparative survey of silicon materials and technologies is being performed in order to identify the baseline material for the future tracker. Hence, a variety of materials (float-zone, magnetic Czochralski and epitaxially grown silicon with thicknesses from 50$\\mu$m to 320$\\mu$m as p- and n-type) has been processed at one company (Hamamatsu Photonics K.K.), irradiated (proton, neutron and mixed irradiations up to 1.5e15n$_{eq}$/cm$^2$ and beyond) and tested under identical conditions. The wafer layout includes a variety of devices to investigate different aspects of sensor properties like simple diodes, test-structures, small strip sensors and a strip sensor array with varying strip p...

  6. Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

    Science.gov (United States)

    Gostimirovic, Dusan; Ye, Winnie N.

    2016-03-01

    For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

  7. On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

    Science.gov (United States)

    Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

    2018-04-01

    The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

  8. Electrochemical lithiation of thin silicon based layers potentiostatically deposited from ionic liquid

    International Nuclear Information System (INIS)

    Vlaic, Codruta Aurelia; Ivanov, Svetlozar; Peipmann, Ralf; Eisenhardt, Anja; Himmerlich, Marcel; Krischok, Stefan; Bund, Andreas

    2015-01-01

    Thin silicon layers containing about 20% carbon and 20% oxygen were deposited on copper substrates by potentiostatic electroreduction from a 1 M SiCl 4 1-butyl-1-methyl-pyrrolidinium bis (trifluoromethyl) sulfonylimide [BMP][TFSI] electrolyte. The electrodeposition process was investigated by means of voltammetric techniques, coupled with in-situ microgravimetry (quartz crystal microbalance, QCM). The electrochemical and QCM data suggest a possible contribution of a partial Si 4+ to Si 2+ reduction and/or a restructuring of the metallic substrate. Considerable impact of side reactions parallel to the deposition process was indicated by QCM measurements performed under potentiostatic and potentiodynamic conditions. The deposition of silicon-based films was confirmed by energy dispersive X-ray analysis (EDX). Analysis of the chemical composition of the deposit and its elemental distribution were achieved by depth profiling X-ray photoelectron spectroscopy (XPS). The electrodeposited silicon containing layers showed stable lithiation and delithiation with capacity values of about 1200 mAhg −1 and 80% capacity retention after 300 cycles in standard EC/DMC electrolytes. In ionic liquid (IL) the material displayed lower capacity of ca. 500 mAhg −1 , which can be attributed to the higher viscosity of this electrolyte and deposition of IL decomposition products during lithiation

  9. Modification of inkjet printer for polymer sensitive layer preparation on silicon-based gas sensors

    Directory of Open Access Journals (Sweden)

    Tianjian Li

    2015-04-01

    Full Text Available Inkjet printing is a versatile, low cost deposition technology with the capabilities for the localized deposition of high precision, patterned deposition in a programmable way, and the parallel deposition of a variety of materials. This paper demonstrates a new method of modifying the consumer inkjet printer to prepare polymer-sensitive layers on silicon wafer for gas sensor applications. A special printing tray for the modified inkjet printer to support a 4-inch silicon wafer is designed. The positioning accuracy of the deposition system is tested, based on the newly modified printer. The experimental data show that the positioning errors in the horizontal direction are negligibly small, while the positioning errors in the vertical direction rise with the increase of the printing distance of the wafer. The method for making suitable ink to be deposited to form the polymer-sensitive layer is also discussed. In the testing, a solution of 0.1 wt% polyvinyl alcohol (PVA was used as ink to prepare a sensitive layer with certain dimensions at a specific location on the surface of the silicon wafer, and the results prove the feasibility of the methods presented in this article.

  10. Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

    KAUST Repository

    Essig, Stephanie; Dré on, Julie; Rucavado, Esteban; Mews, Mathias; Koida, Takashi; Boccard, Mathieu; Werner, Jé ré mie; Geissbü hler, Jonas; Lö per, Philipp; Morales-Masis, Monica; Korte, Lars; De Wolf, Stefaan; Balllif, Christophe

    2018-01-01

    Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient

  11. Nanoscale phosphorus atom arrays created using STM for the fabrication of a silicon based quantum computer.

    Energy Technology Data Exchange (ETDEWEB)

    O' Brien, J. L. (Jeremy L.); Schofield, S. R. (Steven R.); Simmons, M. Y. (Michelle Y.); Clark, R. G. (Robert G.); Dzurak, A. S. (Andrew S.); Curson, N. J. (Neil J.); Kane, B. E. (Bruce E.); McAlpine, N. S. (Neal S.); Hawley, M. E. (Marilyn E.); Brown, G. W. (Geoffrey W.)

    2001-01-01

    Quantum computers offer the promise of formidable computational power for certain tasks. Of the various possible physical implementations of such a device, silicon based architectures are attractive for their scalability and ease of integration with existing silicon technology. These designs use either the electron or nuclear spin state of single donor atoms to store quantum information. Here we describe a strategy to fabricate an array of single phosphorus atoms in silicon for the construction of such a silicon based quantum computer. We demonstrate the controlled placement of single phosphorus bearing molecules on a silicon surface. This has been achieved by patterning a hydrogen mono-layer 'resist' with a scanning tunneling microscope (STM) tip and exposing the patterned surface to phosphine (PH3) molecules. We also describe preliminary studies into a process to incorporate these surface phosphorus atoms into the silicon crystal at the array sites. Keywords: Quantum computing, nanotechriology scanning turincling microscopy, hydrogen lithography

  12. 3D printing PLA and silicone elastomer structures with sugar solution support material

    Science.gov (United States)

    Hamidi, Armita; Jain, Shrenik; Tadesse, Yonas

    2017-04-01

    3D printing technology has been used for rapid prototyping since 1980's and is still developing in a way that can be used for customized products with complex design and miniature features. Among all the available 3D printing techniques, Fused Deposition Modeling (FDM) is one of the most widely used technologies because of its capability to build different structures by employing various materials. However, complexity of parts made by FDM is greatly limited by restriction of using support materials. Support materials are often used in FDM for several complex geometries such as fully suspended shapes, overhanging surfaces and hollow features. This paper describes an approach to 3D print a structure using silicone elastomer and polylactide fiber (PLA) by employing a novel support material that is soluble in water. This support material is melted sugar which can easily be prepared at a low cost. Sugar is a carbohydrate, which is found naturally in plants such as sugarcane and sugar beets; therefore, it is completely organic and eco-friendly. As another advantage, the time for removing this material from the part is considerably less than other commercially available support materials and it can be removed easily by warm water without leaving any trace. Experiments were done using an inexpensive desktop 3D printer to fabricate complex structures for use in soft robots. The results envision that further development of this system would contribute to a method of fabrication of complex parts with lower cost yet high quality.

  13. Molecular monolayers for electrical passivation and functionalization of silicon-based solar energy devices

    NARCIS (Netherlands)

    Veerbeek, Janneke; Firet, Nienke J.; Vijselaar, Wouter; Elbersen, R.; Gardeniers, Han; Huskens, Jurriaan

    2017-01-01

    Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based

  14. In-situ formation of nanoparticles within a silicon-based matrix

    Science.gov (United States)

    Thoma, Steven G [Albuquerque, NM; Wilcoxon, Jess P [Albuquerque, NM; Abrams, Billie L [Albuquerque, NM

    2008-06-10

    A method for encapsulating nanoparticles with an encapsulating matrix that minimizes aggregation and maintains favorable properties of the nanoparticles. The matrix comprises silicon-based network-forming compounds such as ormosils and polysiloxanes. The nanoparticles are synthesized from precursors directly within the silicon-based matrix.

  15. Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

    Science.gov (United States)

    Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Chattopadhyay, Goutam (Inventor); Perez, Jose Vicente Siles (Inventor); Lin, Robert H. (Inventor); Mehdi, Imran (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Peralta, Alejandro (Inventor)

    2016-01-01

    A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

  16. Interpenetrated polymer networks based on commercial silicone elastomers and ionic networks with high dielectric permittivity and self-healing properties

    DEFF Research Database (Denmark)

    Ogliani, Elisa; Yu, Liyun; Skov, Anne Ladegaard

    the applicability. One method used to avoid this limitation is to increase the dielectric permittivity of the material in order to improve the actuation response at a given field. Recently, interpenetrating polymer networks (IPNs) based on covalently cross-linked commercial silicone elastomers and ionic networks...... from amino- and carboxylic acid- functional silicones have been designed[2] (Figure 1). This novel system provides both the mechanical stability and the high breakdown strength given by the silicone part of the IPNs and the high permittivity and the softening effect of the ionic network. Thus......,1 Hz), and the commercial elastomers RT625 and LR3043/30 provide thebest viscoelastic properties to the systems, since they maintain low viscous losses upon addition of ionic network. The values ofthe breakdown strength in all cases remain higher than that of the reference pure PDMS network (ranging...

  17. Porous silicon-based direct hydrogen sulphide fuel cells.

    Science.gov (United States)

    Dzhafarov, T D; Yuksel, S Aydin

    2011-10-01

    In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

  18. Signals from fluorescent materials on the surface of silicon micro-strip sensors

    CERN Document Server

    Sperlich, Dennis; The ATLAS collaboration

    2018-01-01

    For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker (ITk). In order to minimise the amount of material in the ITk, circuit boards with readout electronics will be glued onto the active area of the sensor. Several adhesives, investigated to be used for the construction of detector modules, were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high-radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By positioning the beam parallel to the sensor surfave and pointing it both inside the sensor and above the sensor surface inside the deposited glue, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibilit...

  19. Trace-based post-silicon validation for VLSI circuits

    CERN Document Server

    Liu, Xiao

    2014-01-01

    This book first provides a comprehensive coverage of state-of-the-art validation solutions based on real-time signal tracing to guarantee the correctness of VLSI circuits.  The authors discuss several key challenges in post-silicon validation and provide automated solutions that are systematic and cost-effective.  A series of automatic tracing solutions and innovative design for debug (DfD) techniques are described, including techniques for trace signal selection for enhancing visibility of functional errors, a multiplexed signal tracing strategy for improving functional error detection, a tracing solution for debugging electrical errors, an interconnection fabric for increasing data bandwidth and supporting multi-core debug, an interconnection fabric design and optimization technique to increase transfer flexibility and a DfD design and associated tracing solution for improving debug efficiency and expanding tracing window. The solutions presented in this book improve the validation quality of VLSI circuit...

  20. Silicon nano crystal-based non-volatile memory devices

    International Nuclear Information System (INIS)

    Ng, C.Y.; Chen, T.P.; Sreeduth, D.; Chen, Q.; Ding, L.; Du, A.

    2006-01-01

    In this work, we have investigated the performance and reliability of a Flash memory based on silicon nanocrystal synthesized with very-low energy ion beams. The devices are fabricated with a conventional CMOS process and the size of the nanocrystal is ∼ 4 nm as determined from TEM measurement. Electrical properties of the devices with a tunnel oxide of either 3 nm or 7 nm are evaluated. The devices exhibit good endurance up to 10 5 W/E cycles even at the high operation temperature of 85 deg. C for both the tunnel oxide thicknesses. For the thicker tunnel oxide (i.e., the 7-nm tunnel oxide), a good retention performance with an extrapolated 10-year memory window of ∼ 0.3 V (or ∼ 20% of charge lose after 10 years) is achieved. However, ∼ 70% of charge loss after 10 years is expected for the thinner tunnel oxide (i.e., the 3-nm tunnel oxide)

  1. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  2. Irradiation study of different silicon materials for the CMS tracker upgrade

    International Nuclear Information System (INIS)

    Erfle, Joachim

    2014-05-01

    Around 2022, an upgrade of the LHC collider complex is planned to significantly increase the luminosity (the High Luminosity LHC, HL-LHC). This means that the experiments have to cope with a higher number of collisions per bunch crossing and survive in a radiation environment much harsher than that at the present LHC. Especially the tracking detectors have to be improved for the HL-LHC. The increased number of tracks requires an increase of the number of readout channels while the higher radiation makes new sensor materials necessary. Within CMS, a measurement campaign was initiated to study the performance of different silicon materials in a corresponding radiation environment. To simulate the expected radiation the samples were irradiated with neutrons and with protons with two different energies. Radiation damage can be divided in two categories. First, ionizing energy loss in the surface isolation layers of the sensor leads to a change of the concentration of charged states in the sensor surface and therefore alters the distribution of the electrical fields in the sensor. Second, non-ionizing energy loss in the bulk of the sensor material leads to a variety of defects in the silicon lattice. Electrically active defects can influence the material properties. The three properties under investigation are the reverse current, the full depletion voltage and the charge collection. While the reverse current and full depletion voltage influence the power dissipation and the noise of the detector, the charge collection directly influences the measurement. The material properties were studied using pad and strip sensor. The structures were electrically characterized before and after irradiation with different fluences of neutrons and protons, corresponding to the expected fluences at different radii of the outer tracker after 3000 fb -1 . The charge collection measurements were mainly performed using the ALiBaVa readout system and the charge was induced with

  3. Use of Silicon Carbide as Beam Intercepting Device Material: Tests, Issues and Numerical Simulations

    CERN Document Server

    Delonca, M; Gil Costa, M; Vacca, A

    2014-01-01

    Silicon Carbide (SiC) stands as one of the most promising ceramic material with respect to its thermal shock resistance and mechanical strengths. It has hence been considered as candidate material for the development of higher performance beam intercepting devices at CERN. Its brazing with a metal counterpart has been tested and characterized by means of microstructural and ultrasound techniques. Despite the positive results, its use has to be evaluated with care, due to the strong evidence in literature of large and permanent volumetric expansion, called swelling, under the effect of neutron and ion irradiation. This may cause premature and sudden failure, and can be mitigated to some extent by operating at high temperature. For this reason limited information is available for irradiation below 100°C, which is the typical temperature of interest for beam intercepting devices like dumps or collimators. This paper describes the brazing campaign carried out at CERN, the results, and the theoretical and numeric...

  4. Silicon CMOS architecture for a spin-based quantum computer.

    Science.gov (United States)

    Veldhorst, M; Eenink, H G J; Yang, C H; Dzurak, A S

    2017-12-15

    Recent advances in quantum error correction codes for fault-tolerant quantum computing and physical realizations of high-fidelity qubits in multiple platforms give promise for the construction of a quantum computer based on millions of interacting qubits. However, the classical-quantum interface remains a nascent field of exploration. Here, we propose an architecture for a silicon-based quantum computer processor based on complementary metal-oxide-semiconductor (CMOS) technology. We show how a transistor-based control circuit together with charge-storage electrodes can be used to operate a dense and scalable two-dimensional qubit system. The qubits are defined by the spin state of a single electron confined in quantum dots, coupled via exchange interactions, controlled using a microwave cavity, and measured via gate-based dispersive readout. We implement a spin qubit surface code, showing the prospects for universal quantum computation. We discuss the challenges and focus areas that need to be addressed, providing a path for large-scale quantum computing.

  5. Recent Advances on Luminescent Enhancement-Based Porous Silicon Biosensors.

    Science.gov (United States)

    Jenie, S N Aisyiyah; Plush, Sally E; Voelcker, Nicolas H

    2016-10-01

    Luminescence-based detection paradigms have key advantages over other optical platforms such as absorbance, reflectance or interferometric based detection. However, autofluorescence, low quantum yield and lack of photostability of the fluorophore or emitting molecule are still performance-limiting factors. Recent research has shown the need for enhanced luminescence-based detection to overcome these drawbacks while at the same time improving the sensitivity, selectivity and reducing the detection limits of optical sensors and biosensors. Nanostructures have been reported to significantly improve the spectral properties of the emitting molecules. These structures offer unique electrical, optic and magnetic properties which may be used to tailor the surrounding electrical field of the emitter. Here, the main principles behind luminescence and luminescence enhancement-based detections are reviewed, with an emphasis on europium complexes as the emitting molecule. An overview of the optical porous silicon microcavity (pSiMC) as a biosensing platform and recent proof-of-concept examples on enhanced luminescence-based detection using pSiMCs are provided and discussed.

  6. Double-shelled silicon anode nanocomposite materials: A facile approach for stabilizing electrochemical performance via interface construction

    Science.gov (United States)

    Du, Lulu; Wen, Zhongsheng; Wang, Guanqin; Yang, Yan-E.

    2018-04-01

    The rapid capacity fading induced by volumetric changes is the main issue that hinders the widespread application of silicon anode materials. Thus, double-shelled silicon composite materials where lithium silicate was located between an Nb2O5 coating layer and a silicon active core were configured to overcome the chemical compatibility issues related to silicon and oxides. The proposed composites were prepared via a facile co-precipitation method combined with calcination. Transmission electron microscopy and X-ray photoelectron spectroscopy analysis demonstrated that a transition layer of lithium silicate was constructed successfully, which effectively hindered the thermal inter-diffusion between the silicon and oxide coating layers during heat treatment. The electrochemical performance of the double-shelled silicon composites was enhanced dramatically with a retained specific capacity of 1030 mAh g-1 after 200 cycles at a current density of 200 mA g-1 compared with 598 mAh g-1 for a core-shell Si@Nb2O5 composite that lacked the interface. The lithium silicate transition layer was shown to play an important role in maintaining the high electrochemical stability.

  7. Silicon-based spin and charge quantum computation

    Directory of Open Access Journals (Sweden)

    Belita Koiller

    2005-06-01

    Full Text Available Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus in Si are ideal candidates for qubits in such proposals due to the relatively long spin coherence times. For these spin qubits, donor electron charge manipulation by external gates is a key ingredient for control and read-out of single-qubit operations, while shallow donor exchange gates are frequently invoked to perform two-qubit operations. More recently, charge qubits based on tunnel coupling in P+2 substitutional molecular ions in Si have also been proposed. We discuss the feasibility of the building blocks involved in shallow donor quantum computation in silicon, taking into account the peculiarities of silicon electronic structure, in particular the six degenerate states at the conduction band edge. We show that quantum interference among these states does not significantly affect operations involving a single donor, but leads to fast oscillations in electron exchange coupling and on tunnel-coupling strength when the donor pair relative position is changed on a lattice-parameter scale. These studies illustrate the considerable potential as well as the tremendous challenges posed by donor spin and charge as candidates for qubits in silicon.Arquiteturas de computadores quânticos baseadas em silício vêm atraindo atenção devido às suas perspectivas de escalabilidade e utilização dos recursos já instalados associados à tecnologia do Si. Spins eletrônicos e nucleares de doadores rasos (por exemplo fósforo em Si são candidatos ideais para bits quânticos (qubits nestas propostas, devido aos tempos de coerência relativamente longos dos spins em matrizes de Si. Para estes qubits de spin, a manipulação da carga do elétron do doador

  8. Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P. C.

    2005-11-01

    The major objectives of this subcontract have been: (1) understand the microscopic properties of the defects that contribute to the Staebler-Wronski effect to eliminate this effect, (2) perform correlated studies on films and devices made by novel techniques, especially those with promise to improve stability or deposition rates, (3) understand the structural, electronic, and optical properties of films of hydrogenated amorphous silicon (a-Si:H) made on the boundary between the amorphous and microcrystalline phases, (4) search for more stable intrinsic layers of a-Si:H, (5) characterize the important defects, impurities, and metastabilities in the bulk and at surfaces and interfaces in a-Si:H films and devices and in important alloy systems, and (6) make state-of-the-art plasma-enhanced chemical vapor deposition (PECVD) devices out of new, advanced materials, when appropriate. All of these goals are highly relevant to improving photovoltaic devices based on a-Si:H and related alloys. With regard to the first objective, we have identified a paired hydrogen site that may be the defect that stabilizes the silicon dangling bonds formed in the Staebler-Wronski effect.

  9. Development of an SU-8 MEMS process with two metal electrodes using amorphous silicon as a sacrificial material

    KAUST Repository

    Ramadan, Khaled S.

    2013-02-08

    This work presents an SU-8 surface micromachining process using amorphous silicon as a sacrificial material, which also incorporates two metal layers for electrical excitation. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic applications due to its mechanical properties, biocompatibility and low cost. Amorphous silicon is used as a sacrificial layer in MEMS applications because it can be deposited in large thicknesses, and can be released in a dry method using XeF2, which alleviates release-based stiction problems related to MEMS applications. In this work, an SU-8 MEMS process was developed using ;-Si as a sacrificial layer. Two conductive metal electrodes were integrated in this process to allow out-of-plane electrostatic actuation for applications like MEMS switches and variable capacitors. In order to facilitate more flexibility for MEMS designers, the process can fabricate dimples that can be conductive or nonconductive. Additionally, this SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were optimized for two sets of thicknesses: thin (5-10 m) and thick (130 m). The process was tested fabricating MEMS switches, capacitors and thermal actuators. © 2013 IOP Publishing Ltd.

  10. Rolling-element fatigue life of silicon nitride balls. [as compared to that of steel, ceramic, and cermet materials

    Science.gov (United States)

    Parker, R. J.; Zaretsky, E. V.

    1974-01-01

    The five-ball fatigue tester was used to evaluate silicon nitride as a rolling-element bearing material. Results indicate that hot-pressed silicon nitride running against steel may be expected to yield fatigue lives comparable to or greater than those of bearing quality steel running against steel at stress levels typical rolling-element bearing application. The fatigue life of hot-pressed silicon nitride is considerably greater than that of any ceramic or cermet tested. Computer analysis indicates that there is no improvement in the lives of 120-mm-bore angular--contact ball bearings of the same geometry operating at DN values from 2 to 4 million where hot-pressed silicon nitride balls are used in place of steel balls.

  11. Photonic integration and photonics-electronics convergence on silicon platform

    CERN Document Server

    Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

    2015-01-01

    Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

  12. Stiffness Customization and Patterning for Property Modulation of Silicone-Based Soft Pneumatic Actuators.

    Science.gov (United States)

    Sun, Yi; Yap, Hong Kai; Liang, Xinquan; Guo, Jin; Qi, Peng; Ang, Marcelo H; Yeow, Chen-Hua

    2017-09-01

    Soft pneumatic actuators (SPAs), as novel types of motion drivers for robotic devices, excel in many applications, such as rehabilitation and biomimicry, which demand compliance and softness. To further expand their scope of utilization, the SPAs should be customizable to meet the distinctive requirements of different applications. This article proposes a novel perspective on the SPA working mechanism based on stiffness distribution and then presents a versatile method called stiffness customization and patterning (SCP) for SPA body stiffness layout as a novel attempt to customize SPAs with distinctive properties. We fabricated a hybrid type of material combining unstretchable material and silicone with customizable aggregated elasticity. The tensile results showed that embedding unstretchable material directly increases the stiffness of the hybrid material sample, and our stress-strain model for SCP is able to adequately predict the elasticity of hybrid samples with specific material ratios. By applying this approach to bending-type SPAs, we are able to mitigate SPA buckling, a main failure mode of SPAs, and improve the SPA tip force by using hybrid material with globally increased stiffness. We also diversify bending modalities with different stiffness configurations in the hybrid material. SCP offers numerous ways to engineer SPAs for more applications.

  13. Amorphous silicon-based PINIP structure for color sensor

    International Nuclear Information System (INIS)

    Zhang, S.; Raniero, L.; Fortunato, E.; Ferreira, I.; Aguas, H.; Martins, R.

    2005-01-01

    A series of hydrogenated amorphous silicon carbide (a-SiC:H) films was prepared by plasma enhanced chemical vapor deposition (PECVD) technology. The microstructure and photoelectronic properties of the film are investigated by absorption spectra (in the ultraviolet to near-infrared range) and Fourier transform infrared (FTIR) spectra. The results show that good band gap controllability (1.83-3.64 eV) was achieved by adjusting the plasma parameters. In the energy range around 2.1 eV, the a-Si 1-x C x :H films exhibit good photosensitivity, opening the possibility to use this wide band gap material for device application, especially when blue color detectors are concerned. A multilayer device with a stack of glass/TCO(ZnO:Ga)/P(a-SiC:H)/I(a-SiC:H)/N(a-Si:H)/I(a-Si:H)/P(a-Si:H)/Al has been prepared. The devices can detect blue and red colors under different bias voltages. The optimization of the device, especially the film thickness and the band gap offset used to achieve better detectivity, is also done in this work

  14. Material parameters in a thick hydrogenated amorphous silicon detector and their effect on signal collection

    International Nuclear Information System (INIS)

    Qureshi, S.; Perez-Mendez, V.; Kaplan, S.N.; Fujieda, I.; Cho, G.; Street, R.A.

    1989-04-01

    Transient photoconductivity and ESR measurements were done to relate the ionized dangling bond density of thick hydrogenated amorphous silicon (a-Si:H) detectors. We found that only a fraction (/approximately/30--35%) of the total defect density as measured by ESR is ionized when the detector is biased into deep depletion. The measurements on annealed samples also show that this fraction is about 0.3. An explanation based on the shift of the Fermi energy is given. The measurements show that the time dependence of relaxation is a stretched exponential. 8 refs., 4 figs., 1 tab

  15. Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

    NARCIS (Netherlands)

    Munyeme, Geoffrey

    2003-01-01

    We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction

  16. Molecular Monolayers for Electrical Passivation and Functionalization of Silicon-Based Solar Energy Devices.

    Science.gov (United States)

    Veerbeek, Janneke; Firet, Nienke J; Vijselaar, Wouter; Elbersen, Rick; Gardeniers, Han; Huskens, Jurriaan

    2017-01-11

    Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based solar cells. Organic monolayers were coupled to silicon surfaces by hydrosilylation in order to avoid an insulating silicon oxide layer at the surface. Monolayers of 1-tetradecyne were shown to passivate silicon micropillar-based solar cells with radial junctions, by which the efficiency increased from 8.7% to 9.9% for n + /p junctions and from 7.8% to 8.8% for p + /n junctions. This electrical passivation of the surface, most likely by removal of dangling bonds, is reflected in a higher shunt resistance in the J-V measurements. Monolayers of 1,8-nonadiyne were still reactive for click chemistry with a model catalyst, thus enabling simultaneous passivation and future catalyst coupling.

  17. Penis augmentation by application of silicone material: complications and surgical treatment.

    Science.gov (United States)

    Sukop, A; Heracek, J; Mestak, O; Borský, J; Bayer, J; Schwarzmannová, K

    2013-01-01

    Complications resulting from enlargement of the penis by applications of unknown types of silicone and mineral oils are well described. Surgical removal of the tissue altered by inflammation leads to the development of defects of various sizes, often circular from the glans penis to the scrotum. The options of subsequent surgical treatment described in literature are not very extensive. Most defects are managed with skin grafting, rarely V-Y advancement or bilateral scrotal flaps. We present a 36-year-old patient after application of unknown silicone material into the penis for cosmetic enlargement. After the application developed severe inflammation with ulceration and necrosis around the penis. Conservative treatment was not effective, therefore, the infiltrated skin with subcutaneous tissue of the entire penis was surgically removed. The resulting defect was covered by implantation of the penis under the skin of the scrotum. There were no complications in the postoperative course, pain that was present before the surgery immediately subsided. Skin suture healed completely within 14 days. Three months after the surgery the patient returned to normal sexual life. Implantation of the penis under the skin of the scrotum is a fast, safe and effective method that can treat most of the circular skin defects of the penis. Scrotal skin is thin, soft, elastic and creates abundant and good cover around the entire penis.

  18. Studies on silicone based antifoaming agents to be used in G.S. (Girlder sulfide) heavy water plants

    International Nuclear Information System (INIS)

    Delfino, C.A.

    1986-01-01

    In Girlder sulfide (G.S.) heavy water plants hydrogen sulfide-water systems are inherentely foaming, so the adding of antifoaming materials is of great importance. These may be of high volatility, pyrolizable or chemically unstable in plant operation conditions (water and hydrogen sulfide at 2MPa, up to 230 deg C). Six commercial silicone based antifoaming agents were studied from the point of view of their chemical and thermical stability in order to select the most suitable. (Author) [es

  19. Effects of Non-equilibrium Solidification on the Material Properties of Brick Silicon for Photovoltaics

    Science.gov (United States)

    Regnault, W. F.; Yoo, K. C.; Soltani, P. K.; Johnson, S. M.

    1984-01-01

    Silicon ingot growth technologies like the Ubiquitous Crystallization Process (UCP) are solidified within a shaping crucible. The rate at which heat can be lost from this crucible minus the rate at which heat is input from an external source determines the rate at which crystallization will occur. Occasionally, when the process parameters for solidification are exceeded, the normally large multi-centimeter grain size material assocated with the UCP will break down into regions containing extremely small, millimeter or less, grain size material. Accompanying this breakdown in grain growth is the development of so called sinuous grain boundaries. The breakdown in grain growth which results in this type of small grain structure with sinuous boundaries is usually associated with the rapid crystallization that would accompany a system failure. This suggests that there are limits to the growth velocity that one can obtain and still expect to produce material that would possess good photovoltaic properties. It is the purpose to determine the causes behind the breakdown of this material and what parameters will determine the best rates of solidification.

  20. All-silicon nanorod-based Dammann gratings.

    Science.gov (United States)

    Li, Zile; Zheng, Guoxing; He, Ping'An; Li, Song; Deng, Qiling; Zhao, Jiangnan; Ai, Yong

    2015-09-15

    Established diffractive optical elements (DOEs), such as Dammann gratings, whose phase profile is controlled by etching different depths into a transparent dielectric substrate, suffer from a contradiction between the complexity of fabrication procedures and the performance of such gratings. In this Letter, we combine the concept of geometric phase and phase modulation in depth, and prove by theoretical analysis and numerical simulation that nanorod arrays etched on a silicon substrate have a characteristic of strong polarization conversion between two circularly polarized states and can act as a highly efficient half-wave plate. More importantly, only by changing the orientation angles of each nanorod can the arrays control the phase of a circularly polarized light, cell by cell. With the above principle, we report the realization of nanorod-based Dammann gratings reaching diffraction efficiencies of 50%-52% in the C-band fiber telecommunications window (1530-1565 nm). In this design, uniform 4×4 spot arrays with an extending angle of 59°×59° can be obtained in the far field. Because of these advantages of the single-step fabrication procedure, accurate phase controlling, and strong polarization conversion, nanorod-based Dammann gratings could be utilized for various practical applications in a range of fields.

  1. Effects of the Formulations of Silicon-Based Composite Anodes on their Mechanical, Storage, and Electrochemical Properties.

    Science.gov (United States)

    Assresahegn, Birhanu Desalegn; Bélanger, Daniel

    2017-10-23

    In this work, the effects of the formulation of silicon-based composite anodes on their mechanical, storage, and electrochemical properties were investigated. The electrode formulation was changed through the use of hydrogenated or modified (through the covalent attachment of a binding additive such as polyacrylic acid) silicon and acetylene black or graphene sheets as conducting additives. A composite anode with a covalently grafted binder had the highest elongation without breakages and strong adhesion to the current collector. These mechanical properties depend significantly on the conductive carbon additive used and the use of graphene sheets instead of acetylene black can improve elongation and adhesion significantly. After 180 days of storage under ambient conditions, the electronic conductivity and discharge capacity of the modified silicon electrode showed much smaller decreases in these properties than those of the hydrogenated silicon composite electrode, indicating that the modification can result in passivation and a constant composition of the active material. Moreover, the composite Si anode has a high packing density. Consequently, thin-film electrodes with very high material loadings can be prepared without decreased electrochemical performance. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Terahertz optical-Hall effect for multiple valley band materials: n-type silicon

    International Nuclear Information System (INIS)

    Kuehne, P.; Hofmann, T.; Herzinger, C.M.; Schubert, M.

    2011-01-01

    The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.

  3. Influence of epoxy resin as encapsulation material of silicon photovoltaic cells on maximum current

    Directory of Open Access Journals (Sweden)

    Acevedo-Gómez David

    2017-01-01

    Full Text Available This work presents an analysis about how the performance of silicon photovoltaic cells is influenced by the use of epoxy resin as encapsulation material with flat roughness. The effect of encapsulation on current at maximum power of mono-crystalline cell was tested indoor in a solar simulator bench at 1000 w/m² and AM1.5G. The results show that implementation of flat roughness layer onto cell surface reduces the maximum current inducing on average 2.7% less power with respect to a cell before any encapsulation. The losses of power and, in consequence, the less production of energy are explained by resin light absorption, reflection and partially neutralization of non-reflective coating.

  4. Stain-etched porous silicon nanostructures for multicrystalline silicon-based solar cells

    Science.gov (United States)

    Ben Rabha, M.; Hajji, M.; Belhadj Mohamed, S.; Hajjaji, A.; Gaidi, M.; Ezzaouia, H.; Bessais, B.

    2012-02-01

    In this paper, we study the optical, optoelectronic and photoluminescence properties of stain-etched porous silicon nanostructures obtained with different etching times. Special attention is given to the use of the stain-etched PS as an antireflection coating as well as for surface passivating capabilities. The surface morphology has been analyzed by scanning electron microscopy. The evolution of the Si-O and Si-H absorption bands was analyzed by Fourier transform infrared spectrometry before and after PS treatment. Results show that stain etching of the silicon surface drops the total reflectivity to about 7% in the 400-1100 nm wavelength range and the minority carrier lifetime enhances to about 48 μs.

  5. Waveguide cores containing silicon nanocrystals as active spectral filters for silicon-based photonics

    Czech Academy of Sciences Publication Activity Database

    Pelant, Ivan; Ostatnický, T.; Valenta, J.; Luterová, Kateřina; Skopalová, Eva; Mates, Tomáš; Elliman, R. G.

    2006-01-01

    Roč. 83, - (2006), s. 87-91 ISSN 0946-2171 R&D Projects: GA ČR(CZ) GA202/03/0789; GA ČR(CZ) GP202/01/D030; GA AV ČR(CZ) IAA1010316; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon nanocrystals * planar waveguides * leaky modes Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.023, year: 2006

  6. MEMS-based silicon cantilevers with integrated electrothermal heaters for airborne ultrafine particle sensing

    Science.gov (United States)

    Wasisto, Hutomo Suryo; Merzsch, Stephan; Waag, Andreas; Peiner, Erwin

    2013-05-01

    The development of low-cost and low-power MEMS-based cantilever sensors for possible application in hand-held airborne ultrafine particle monitors is described in this work. The proposed resonant sensors are realized by silicon bulk micromachining technology with electrothermal excitation, piezoresistive frequency readout, and electrostatic particle collection elements integrated and constructed in the same sensor fabrication process step of boron diffusion. Built-in heating resistor and full Wheatstone bridge are set close to the cantilever clamp end for effective excitation and sensing, respectively, of beam deflection. Meanwhile, the particle collection electrode is located at the cantilever free end. A 300 μm-thick, phosphorus-doped silicon bulk wafer is used instead of silicon-on-insulator (SOI) as the starting material for the sensors to reduce the fabrication costs. To etch and release the cantilevers from the substrate, inductively coupled plasma (ICP) cryogenic dry etching is utilized. By controlling the etching parameters (e.g., temperature, oxygen content, and duration), cantilever structures with thicknesses down to 10 - 20 μm are yielded. In the sensor characterization, the heating resistor is heated and generating thermal waves which induce thermal expansion and further cause mechanical bending strain in the out-of-plane direction. A resonant frequency of 114.08 +/- 0.04 kHz and a quality factor of 1302 +/- 267 are measured in air for a fabricated rectangular cantilever (500x100x13.5 μm3). Owing to its low power consumption of a few milliwatts, this electrothermal cantilever is suitable for replacing the current external piezoelectric stack actuator in the next generation of the miniaturized cantilever-based nanoparticle detector (CANTOR).

  7. Superhydrophobic SERS substrates based on silicon hierarchical nanostructures

    Science.gov (United States)

    Chen, Xuexian; Wen, Jinxiu; Zhou, Jianhua; Zheng, Zebo; An, Di; Wang, Hao; Xie, Weiguang; Zhan, Runze; Xu, Ningsheng; Chen, Jun; She, Juncong; Chen, Huanjun; Deng, Shaozhi

    2018-02-01

    Silicon nanostructures have been cultivated as promising surface enhanced Raman scattering (SERS) substrates in terms of their low-loss optical resonance modes, facile functionalization, and compatibility with today’s state-of-the-art CMOS techniques. However, unlike their plasmonic counterparts, the electromagnetic field enhancements induced by silicon nanostructures are relatively small, which restrict their SERS sensing limit to around 10-7 M. To tackle this problem, we propose here a strategy for improving the SERS performance of silicon nanostructures by constructing silicon hierarchical nanostructures with a superhydrophobic surface. The hierarchical nanostructures are binary structures consisted of silicon nanowires (NWs) grown on micropyramids (MPs). After being modified with perfluorooctyltriethoxysilane (PFOT), the nanostructure surface shows a stable superhydrophobicity with a high contact angle of ˜160°. The substrate can allow for concentrating diluted analyte solutions into a specific area during the evaporation of the liquid droplet, whereby the analytes are aggregated into a small volume and can be easily detected by the silicon nanostructure SERS substrate. The analyte molecules (methylene blue: MB) enriched from an aqueous solution lower than 10-8 M can be readily detected. Such a detection limit is ˜100-fold lower than the conventional SERS substrates made of silicon nanostructures. Additionally, the detection limit can be further improved by functionalizing gold nanoparticles onto silicon hierarchical nanostructures, whereby the superhydrophobic characteristics and plasmonic field enhancements can be combined synergistically to give a detection limit down to ˜10-11 M. A gold nanoparticle-functionalized superhydrophobic substrate was employed to detect the spiked melamine in liquid milk. The results showed that the detection limit can be as low as 10-5 M, highlighting the potential of the proposed superhydrophobic SERS substrate in

  8. Hydrogen-terminated mesoporous silicon monoliths with huge surface area as alternative Si-based visible light-active photocatalysts

    KAUST Repository

    Li, Ting; Li, Jun; Zhang, Qiang; Blazeby, Emma; Shang, Congxiao; Xu, Hualong; Zhang, Xixiang; Chao, Yimin

    2016-01-01

    Silicon-based nanostructures and their related composites have drawn tremendous research interest in solar energy storage and conversion. Mesoporous silicon with a huge surface area of 400-900 m2 g-1 developed by electrochemical etching exhibits

  9. Synthesis and characterization of hybrid silicon based complexing materials: extraction of transuranic elements from high level liquid waste; Synthese et caracterisation de gels hybrides de silice a proprietes complexantes: applications a l'extraction des transuraniens des effluents aqueux

    Energy Technology Data Exchange (ETDEWEB)

    Conocar, O

    1999-07-01

    Hybrid organic/inorganic silica compounds with extractive properties have been developed under an enhanced decontamination program for radioactive aqueous nitric acid waste in nuclear facilities. The materials were obtained by the sol-gel process through hydrolysis and poly-condensation of complexing organo-tri-alkoxy-silanes with the corresponding tetra-alkoxy-silane. Hybrid silica compounds were initially synthesized and characterized from mono- and bis-silyl precursors with malonamide or ethylenediamine patterns. Solids with different specific areas and pore diameters were obtained depending on the nature of the precursor, its functionality and its concentration in the tetra-alkoxy-silane. These compounds were then considered and assessed for use in plutonium and americium extraction. Excellent results-partitioning coefficients and capacities have been obtained with malonamide hybrid silica. The comparison with silica compounds impregnated or grafted with the same type of organic group is significant in this respect. Much of the improved performance obtained with hybrid silica may be attributed to the large quantity of complexing groups that can be incorporated in these materials. The effect of the solid texture on the extraction performance was also studied. Although the capacity increased with the specific area, little effect was observed on the distribution coefficients -notably for americium- indicating that the most favorable complexation sites are found on the outer surface. Macroporous malonamide hybrid silica compounds were synthesized to study the effects of the pore diameter, but the results have been inconclusive to date because of the unexpected molecular composition of the materials. (author)

  10. Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

    KAUST Repository

    Essig, Stephanie

    2018-02-21

    Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient hole-selective front contact stack for crystalline silicon solar cells. However, hole extraction from the Si wafer and transport through this stack degrades upon annealing at 190 °C, which is needed to cure the screen-printed Ag metallization applied to typical Si solar cells. Here, we show that effusion of hydrogen from the adjacent layers is a likely cause for this degradation, highlighting the need for hydrogen-lean passivation layers when using such metal-oxide-based carrier-selective contacts. Pre-MoOX-deposition annealing of the passivating a-Si:H layer is shown to be a straightforward approach to manufacturing MoOX-based devices with high fill factors using screen-printed metallization cured at 190 °C.

  11. Temperature Effect on Electrical Treeing and Partial Discharge Characteristics of Silicone Rubber-Based Nanocomposites

    Directory of Open Access Journals (Sweden)

    Mohd Hafizi Ahmad

    2015-01-01

    Full Text Available This study investigated electrical treeing and its associated phase-resolved partial discharge (PD activities in room-temperature, vulcanized silicone rubber/organomontmorillonite nanocomposite sample materials over a range of temperatures in order to assess the effect of temperature on different filler concentrations under AC voltage. The samples were prepared with three levels of nanofiller content: 0% by weight (wt, 1% by wt, and 3% by wt. The electrical treeing and PD activities of these samples were investigated at temperatures of 20°C, 40°C, and 60°C. The results show that the characteristics of the electrical tree changed with increasing temperature. The tree inception times decreased at 20°C due to space charge dynamics, and the tree growth time increased at 40°C due to the increase in the number of cross-link network structures caused by the vulcanization process. At 60°C, more enhanced and reinforced properties of the silicone rubber-based nanocomposite samples occurred. This led to an increase in electrical tree inception time and electrical tree growth time. However, the PD characteristics, particularly the mean phase angle of occurrence of the positive and negative discharge distributions, were insensitive to variations in temperature. This reflects an enhanced stability in the nanocomposite electrical properties compared with the base polymer.

  12. Facile synthesis and stable cycling ability of hollow submicron silicon oxide–carbon composite anode material for Li-ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joong-Yeon; Nguyen, Dan Thien [Department of Fine Chemical Engineering & Applied Chemistry, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kang, Joon-Sup [Department of Energy Science and Technology, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Song, Seung-Wan, E-mail: swsong@cnu.ac.kr [Department of Fine Chemical Engineering & Applied Chemistry, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Department of Energy Science and Technology, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

    2015-06-05

    Highlights: • Hollow submicron SiO{sub 2}–carbon composite material was synthesized using Si{sup 4+}-citrate chelation. • Composite material possessed a homogeneous distribution of SiO{sub 2} and carbon. • Composite electrode delivered ⩾600 mAh/g with a stable cycling stability. • This materials design and synthesis provides a useful platform for scalable production. - Abstract: Advanced SiO{sub 2}–carbon composite anode active material for lithium-ion battery has been synthesized through a simple chelation of silicon cation with citrate in a glyme-based solvent. The resultant composite material demonstrates a homogeneous distribution of constituents over the submicron particles and a unique hollow spherical microstructure, which provides an enhanced electrical conductivity and better accommodation of volume change of silicon during electrochemical charge–discharge cycling, respectively. As a result, the composite electrode exhibits a high cycling stability delivering the capacity retention of 91% at the 100th cycle and discharge capacities of 662–602 mAh/g and coulombic efficiencies of 99.8%. This material synthesis is scalable and cost-effective in preparing various submicron or micron composite electrode materials.

  13. Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

    Science.gov (United States)

    Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

    1999-01-01

    During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

  14. Design, modeling and simulation of MEMS-based silicon Microneedles

    International Nuclear Information System (INIS)

    Amin, F; Ahmed, S

    2013-01-01

    The advancement in semiconductor process engineering and nano-scale fabrication technology has made it convenient to transport specific biological fluid into or out of human skin with minimum discomfort. Fluid transdermal delivery systems such as Microneedle arrays are one such emerging and exciting Micro-Electro Mechanical System (MEMS) application which could lead to a total painless fluid delivery into skin with controllability and desirable yield. In this study, we aimed to revisit the problem with modeling, design and simulations carried out for MEMS based silicon hollow out of plane microneedle arrays for biomedical applications particularly for transdermal drug delivery. An approximate 200 μm length of microneedle with 40 μm diameter of lumen has been successfully shown formed by isotropic and anisotropic etching techniques using MEMS Pro design tool. These microneedles are arranged in size of 2 × 4 matrix array with center to center spacing of 750 μm. Furthermore, comparisons for fluid flow characteristics through these microneedle channels have been modeled with and without the contribution of the gravitational forces using mathematical models derived from Bernoulli Equation. Physical Process simulations have also been performed on TCAD SILVACO to optimize the design of these microneedles aligned with the standard Si-Fabrication lines.

  15. Design, modeling and simulation of MEMS-based silicon Microneedles

    Science.gov (United States)

    Amin, F.; Ahmed, S.

    2013-06-01

    The advancement in semiconductor process engineering and nano-scale fabrication technology has made it convenient to transport specific biological fluid into or out of human skin with minimum discomfort. Fluid transdermal delivery systems such as Microneedle arrays are one such emerging and exciting Micro-Electro Mechanical System (MEMS) application which could lead to a total painless fluid delivery into skin with controllability and desirable yield. In this study, we aimed to revisit the problem with modeling, design and simulations carried out for MEMS based silicon hollow out of plane microneedle arrays for biomedical applications particularly for transdermal drug delivery. An approximate 200 μm length of microneedle with 40 μm diameter of lumen has been successfully shown formed by isotropic and anisotropic etching techniques using MEMS Pro design tool. These microneedles are arranged in size of 2 × 4 matrix array with center to center spacing of 750 μm. Furthermore, comparisons for fluid flow characteristics through these microneedle channels have been modeled with and without the contribution of the gravitational forces using mathematical models derived from Bernoulli Equation. Physical Process simulations have also been performed on TCAD SILVACO to optimize the design of these microneedles aligned with the standard Si-Fabrication lines.

  16. Fabrication of Porous Silicon Based Humidity Sensing Elements on Paper

    Directory of Open Access Journals (Sweden)

    Tero Jalkanen

    2015-01-01

    Full Text Available A roll-to-roll compatible fabrication process of porous silicon (pSi based sensing elements for a real-time humidity monitoring is described. The sensing elements, consisting of printed interdigitated silver electrodes and a spray-coated pSi layer, were fabricated on a coated paper substrate by a two-step process. Capacitive and resistive responses of the sensing elements were examined under different concentrations of humidity. More than a three orders of magnitude reproducible decrease in resistance was measured when the relative humidity (RH was increased from 0% to 90%. A relatively fast recovery without the need of any refreshing methods was observed with a change in RH. Humidity background signal and hysteresis arising from the paper substrate were dependent on the thickness of sensing pSi layer. Hysteresis in most optimal sensing element setup (a thick pSi layer was still noticeable but not detrimental for the sensing. In addition to electrical characterization of sensing elements, thermal degradation and moisture adsorption properties of the paper substrate were examined in connection to the fabrication process of the silver electrodes and the moisture sensitivity of the paper. The results pave the way towards the development of low-cost humidity sensors which could be utilized, for example, in smart packaging applications or in smart cities to monitor the environment.

  17. Emerging terahertz photodetectors based on two-dimensional materials

    Science.gov (United States)

    Yang, Jie; Qin, Hua; Zhang, Kai

    2018-01-01

    Inspired by the innovations in photonics and nanotechnology, the remarkable properties of two-dimensional (2D) materials have renewed interest for the development of terahertz (THz) photodetectors. The versatility of these materials enables ultrafast and ultrasensitive photodetection of THz radiation at room temperature. The atomically thin characteristic together with van der Waals interactions among the layers make it easy to scaling down and integrate with other 2D materials based devices, as well as silicon chips. Efforts have increased fast in the past decade in developing proof-of-concept and the further prospective THz photodetectors based on 2D materials. Here, the recent progress on the exploring of THz photodetectors based on 2D materials is reviewed. We summarized the THz photodetectors under different physical mechanism and introduced the state-of-the-art THz photodetectors based on various promising 2D materials, such as graphene, transition metal dichalcogenides (TMDCs), black phosphorus (BP) and topological insulators (TIs). A brief discussion on the remaining challenges and a perspective of the 2D materials based THz photodetectors are also given.

  18. Performance Enhancement of Silicon Alloy-Based Anodes Using Thermally Treated Poly(amide imide) as a Polymer Binder for High Performance Lithium-Ion Batteries.

    Science.gov (United States)

    Yang, Hwi Soo; Kim, Sang-Hyung; Kannan, Aravindaraj G; Kim, Seon Kyung; Park, Cheolho; Kim, Dong-Won

    2016-04-05

    The development of silicon-based anodes with high capacity and good cycling stability for next-generation lithium-ion batteries is a very challenging task due to the large volume changes in the electrodes during repeated cycling, which results in capacity fading. In this work, we synthesized silicon alloy as an active anode material, which was composed of silicon nanoparticles embedded in Cu-Al-Fe matrix phases. Poly(amide imide)s, (PAI)s, with different thermal treatments were used as polymer binders in the silicon alloy-based electrodes. A systematic study demonstrated that the thermal treatment of the silicon alloy electrodes at high temperature made the electrodes mechanically strong and remarkably enhanced the cycling stability compared to electrodes without thermal treatment. The silicon alloy electrode thermally treated at 400 °C initially delivered a discharge capacity of 1084 mAh g(-1) with good capacity retention and high Coulombic efficiency. This superior cycling performance was attributed to the strong adhesion of the PAI binder resulting from enhanced secondary interactions, which maintained good electrical contacts between the active materials, electronic conductors, and current collector during cycling. These findings are supported by results from X-ray photoelectron spectroscopy, scanning electron microscopy, and a surface and interfacial cutting analysis system.

  19. Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

    Science.gov (United States)

    1983-01-01

    Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

  20. Mesoporous Silicon-Based Anodes for High Capacity, High Performance Li-ion Batteries, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, the active anode...

  1. Tenth Workshop on Crystalline Silicon Solar Cell Materials and Processes: A Summary of Discussion Sessions

    Energy Technology Data Exchange (ETDEWEB)

    Tan, T.; Swanson, D.; Sinton, R.; Sopori, B.

    2001-01-22

    The 10th Workshop on Silicon Solar Cell Materials and Processes was held in Copper Mountain, Colorado, on August 13-16, 2000. The workshop was attended by 85 scientists and engineers from 15 international photovoltaic (PV) companies and 24 research institutions. Review and poster presentations were augmented by discussion sessions to address the recent progress and critical issues in meeting the goals for Si in the PV Industry Roadmap. The theme of the workshop was Si Photovoltaics: 10 Years of Progress and Opportunities for the Future. Two special sessions were held: Advanced Metallization and Interconnections - covering recent advances in solar cell metallization, printed contacts and interconnections, and addressing new metallization schemes for low-cost cell interconnections; and Characterization Methods - addressing the growing need for process monitoring techniques in the PV industry. The following major issues emerged from the discussion sessions: (1) Mechanical breakage in the P V industry involves a large fraction, about 5%-10%, of the wafers. (2) The current use of Al screen-printed back-contacts appears to be incompatible with the PV Industry Roadmap requirements. (3) The PV manufacturers who use hydrogen passivation should incorporate the plasma-enhanced chemical vapor deposited (PECVD) nitride for antireflection coating and hydrogenation. (4) There is an imminent need to dissolve metallic precipitates to minimize the electrical shunt problem caused by the ''bad'' regions in wafers. (5) Industry needs equipment for automated, in-line monitoring and testing. There are simply not many tools available to industry. (6) In the Wrap-Up Session of the workshop, there was consensus to create four industry/university teams that would address critical research topics in crystalline silicon. (7) The workshop attendees unanimously agreed that the workshop has served well the PV community by promoting the fundamental understanding of industrial

  2. Simulation and characterization of silicon nanopillar-based nanoparticle sensors

    Science.gov (United States)

    Wasisto, Hutomo Suryo; Merzsch, Stephan; Huang, Kai; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2013-05-01

    Nanopillar-based structures hold promise as highly sensitive resonant mass sensors for a new generation of aerosol nanoparticle (NP) detecting devices because of their very small masses. In this work, the possible use of a silicon nanopillar (SiNPL) array as a nanoparticle sensor is investigated. The sensor structures are created and simulated using a finite element modeling (FEM) tool of COMSOL Multiphysics 4.3 to study the resonant characteristics and the sensitivity of the SiNPL for femtogram NP mass detection. Instead of using 2D plate models or simple single 3D cylindrical pillar models, FEM is performed with SiNPLs in 3D structures based on the real geometry of experimental SiNPL arrays employing a piezoelectric stack for resonant excitation. In order to achieve an optimal structure and investigate the etching effect on the fabricated resonators, SiNPLs with different designs of meshes, sidewall profiles, lengths, and diameters are simulated and analyzed. To validate the FEM results, fabricated SiNPLs with a high aspect ratio of ~60 are employed and characterized in resonant frequency measurements. SiNPLs are mounted onto a piezoactuator inside a scanning electron microscope (SEM) chamber which can excite SiNPLs into lateral vibration. The measured resonant frequencies of the SiNPLs with diameters about 650 nm and heights about 40 μm range from 434.63 kHz to 458.21 kHz, which agree well with those simulated by FEM. Furthermore, the deflection of a SiNPL can be enhanced by increasing the applied piezoactuator voltage. By depositing different NPs (i.e., carbon, TiO2, SiO2, Ag, and Au NPs) on the SiNPLs, the decrease of the resonant frequency is clearly shown confirming their potential to be used as airborne NP mass sensor with femtogram resolution level.

  3. Compact silicon photonics-based multi laser module for sensing

    Science.gov (United States)

    Ayotte, S.; Costin, F.; Babin, A.; Paré-Olivier, G.; Morin, M.; Filion, B.; Bédard, K.; Chrétien, P.; Bilodeau, G.; Girard-Deschênes, E.; Perron, L.-P.; Davidson, C.-A.; D'Amato, D.; Laplante, M.; Blanchet-Létourneau, J.

    2018-02-01

    A compact three-laser source for optical sensing is presented. It is based on a low-noise implementation of the Pound Drever-Hall method and comprises high-bandwidth optical phase-locked loops. The outputs from three semiconductor distributed feedback lasers, mounted on thermo-electric coolers (TEC), are coupled with micro-lenses into a silicon photonics (SiP) chip that performs beat note detection and several other functions. The chip comprises phase modulators, variable optical attenuators, multi-mode-interference couplers, variable ratio tap couplers, integrated photodiodes and optical fiber butt-couplers. Electrical connections between a metallized ceramic and the TECs, lasers and SiP chip are achieved by wirebonds. All these components stand within a 35 mm by 35 mm package which is interfaced with 90 electrical pins and two fiber pigtails. One pigtail carries the signals from a master and slave lasers, while another carries that from a second slave laser. The pins are soldered to a printed circuit board featuring a micro-processor that controls and monitors the system to ensure stable operation over fluctuating environmental conditions. This highly adaptable multi-laser source can address various sensing applications requiring the tracking of up to three narrow spectral features with a high bandwidth. It is used to sense a fiber-based ring resonator emulating a resonant fiber optics gyroscope. The master laser is locked to the resonator with a loop bandwidth greater than 1 MHz. The slave lasers are offset frequency locked to the master laser with loop bandwidths greater than 100 MHz. This high performance source is compact, automated, robust, and remains locked for days.

  4. Porous silicon carbide (SIC) semiconductor device

    Science.gov (United States)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  5. Polarization Insensitive Wavelength Conversion Based on Four-Wave Mixing in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Peucheret, Christophe

    2012-01-01

    We experimentally demonstrate, for the first time, polarization-insensitive wavelength conversion of a 10 Gb/s NRZ-OOK data signal based on four-wave mixing in a silicon nanowire with bit-error rate measurements.......We experimentally demonstrate, for the first time, polarization-insensitive wavelength conversion of a 10 Gb/s NRZ-OOK data signal based on four-wave mixing in a silicon nanowire with bit-error rate measurements....

  6. ARROW-based silicon-on-insulator photonic crystal waveguides with reduced losses

    DEFF Research Database (Denmark)

    Lavrinenko, Andrei; Novitsky, A.; Zhilko, V.V.

    2006-01-01

    We employ an antiresonant reflecting layers arrangement with silicon-on-insulator based photonic crystal waveguides. The 3D FDTD numerical modelling reveals improved transmission in such structures with a promising potential for their application in photonic circuits.......We employ an antiresonant reflecting layers arrangement with silicon-on-insulator based photonic crystal waveguides. The 3D FDTD numerical modelling reveals improved transmission in such structures with a promising potential for their application in photonic circuits....

  7. Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

    Science.gov (United States)

    2016-05-16

    AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

  8. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    OpenAIRE

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of photovoltaic (PV) devices which deploy the chemical-vapor-deposited hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) and their alloys as the absorber layers and doped ...

  9. Market Opportunity of Some Aluminium Silicon Alloys Materials through Changing the Casting Process

    Directory of Open Access Journals (Sweden)

    Delfim SOARES

    2012-08-01

    Full Text Available Fatigue is considered to be the most common mechanism by which engineering components fail, and it accounts for at least 90% of all service failures attributed to mechanical causes. Mechanical properties (tensile strength, tensile strain, Young modulus, etc as well as fatigue properties (fatigue life are very dependent on casting method. The most direct effects of casting techniques are on the metallurgical microstructure that bounds the mechanical properties. One of the important variables affected by the casting technique is the cooling rate which is well known to strongly restrict the microstructure. In the present research has been done a comparison of fatigue properties of two aluminum silicon alloys obtained by two casting techniques. It was observed that the fatigue life is increasing with 24% for Al12Si and 31% for AL18Si by using centrifugal casting process instead of gravity casting. This increasing in fatigue life means that a component tailored from materials obtained by centrifugal casting will stay longer in service. It was made an estimation of the time required to recover the costs of technology in order to use the centrifuge process that will allow to obtain materials with improved properties. The amortization can be achieved by using two different marketing techniques: through the release of the product at the old price and with much longer life of the component which means "same price - longer life", or increasing price, by highlighting new product performance which means "higher price - higher properties".

  10. Irradiation study of different silicon materials for the CMS tracker upgrade

    CERN Document Server

    Erfle, Joachim; Hansen, Wolfgang; Garutti, Erika

    Around 2022, an upgrade of the LHC collider complex is planned to significantly increase the luminosity (the High Luminosity LHC, HL-LHC). This means that the experiments have to cope with a higher number of collisions per bunch crossing and survive in a radiation environment much harsher than that at the present LHC. Especially the tracking detectors have to be improved for the HL-LHC. The increased number of tracks requires an increase of the number of readout channels while the higher radiation makes new sensor materials necessary. Within CMS, a measurement campaign was initiated to study the performance of different silicon materials in a corresponding radiation environment. To simulate the expected radiation the samples were irradiated with neutrons and with protons with two different energies. Radiation damage can be divided in two categories. First, ionizing energy loss in the surface isolation layers of the sensor leads to a change of the concentration of charged states in the sensor surface and there...

  11. Protein deposition on a lathe-cut silicone hydrogel contact lens material.

    Science.gov (United States)

    Subbaraman, Lakshman N; Woods, Jill; Teichroeb, Jonathan H; Jones, Lyndon

    2009-03-01

    To determine the quantity of total protein, total lysozyme, and the conformational state of lysozyme deposited on a novel, lathe-cut silicone hydrogel (SiHy) contact lens material (sifilcon A) after 3 months of wear. Twenty-four subjects completed a prospective, bilateral, daily-wear, 9-month clinical evaluation in which the subjects were fitted with a novel, custom-made, lathe-cut SiHy lens material. The lenses were worn for three consecutive 3-month periods, with lenses being replaced after each period of wear. After 3 months of wear, the lenses from the left eye were collected and assessed for protein analysis. The total protein deposited on the lenses was determined by a modified Bradford assay, total lysozyme using Western blotting and the lysozyme activity was determined using a modified micrococcal assay. The total protein recovered from the custom-made lenses was 5.3 +/- 2.3 microg/lens and the total lysozyme was 2.4 +/- 1.2 microg/lens. The denatured lysozyme found on the lenses was 1.9 +/- 1.0 microg/lens and the percentage of lysozyme denatured was 80 +/- 10%. Even after 3 months of wear, the quantity of protein and the conformational state of lysozyme deposited on these novel lens materials was very similar to that found on similar surface-coated SiHy lenses after 2 to 4 weeks of wear. These results indicate that extended use of the sifilcon A material is not deleterious in terms of the quantity and quality of protein deposited on the lens.

  12. Removal of Silicone Oil From Intraocular Lens Using Novel Surgical Materials

    Science.gov (United States)

    Paschalis, Eleftherios I.; Eliott, Dean; Vavvas, Demetrios G.

    2014-01-01

    Purpose To design, fabricate, and evaluate novel materials to remove silicone oil (SiO) droplets from intraocular lenses (IOL) during vitreoretinal surgery. Methods Three different designs were fabricated using soft lithography of polydimethylsiloxane (PDMS), three-dimensional (3D) inverse PDMS fabrication using water dissolvable particles, and atomic layer deposition (ALD) of alumina (Al2O3) on surgical cellulose fibers. Laboratory tests included static and dynamic contact angle (CA) measurements with water and SiO, nondestructive x-ray microcomputer tomography (micro-CT), and microscopy. SiO removal was performed in vitro and ex vivo using implantable IOLs and explanted porcine eyes. Results All designs exhibited enhanced hydrophobicity and oleophilicity. Static CA measurements with water ranged from 131° to 160° and with SiO CA approximately 0° in 120 seconds following exposure. Nondestructive x-ray analysis of the 3D PDMS showed presence of interconnected polydispersed porosity of 100 to 300 μm in diameter. SiO removal from IOLs was achieved in vitro and ex vivo using standard 20-G vitrectomy instrumentation. Conclusion Removal of SiO from IOLs can be achieved using materials with lower surface energy than that of the IOLs. This can be achieved using appropriate surface chemistry and surface topography. Three designs, with enhanced hydrophobic properties, were fabricated and tested in vitro and ex vivo. All materials remove SiO within an aqueous environment. Preliminary ex vivo results were very promising, opening new possibilities for SiO removal in vitreoretinal surgeries. Translational Relevance This is the first report of an instrument that can lead to successful removal of SiO from the surface of IOL. In addition to the use of this instrument/material in medicine it can also be used in the industry, for example, retrieval of oil spills from bodies of water. PMID:25237593

  13. Removal of Silicone Oil From Intraocular Lens Using Novel Surgical Materials.

    Science.gov (United States)

    Paschalis, Eleftherios I; Eliott, Dean; Vavvas, Demetrios G

    2014-09-01

    To design, fabricate, and evaluate novel materials to remove silicone oil (SiO) droplets from intraocular lenses (IOL) during vitreoretinal surgery. Three different designs were fabricated using soft lithography of polydimethylsiloxane (PDMS), three-dimensional (3D) inverse PDMS fabrication using water dissolvable particles, and atomic layer deposition (ALD) of alumina (Al 2 O 3 ) on surgical cellulose fibers. Laboratory tests included static and dynamic contact angle (CA) measurements with water and SiO, nondestructive x-ray microcomputer tomography (micro-CT), and microscopy. SiO removal was performed in vitro and ex vivo using implantable IOLs and explanted porcine eyes. All designs exhibited enhanced hydrophobicity and oleophilicity. Static CA measurements with water ranged from 131° to 160° and with SiO CA approximately 0° in 120 seconds following exposure. Nondestructive x-ray analysis of the 3D PDMS showed presence of interconnected polydispersed porosity of 100 to 300 μm in diameter. SiO removal from IOLs was achieved in vitro and ex vivo using standard 20-G vitrectomy instrumentation. Removal of SiO from IOLs can be achieved using materials with lower surface energy than that of the IOLs. This can be achieved using appropriate surface chemistry and surface topography. Three designs, with enhanced hydrophobic properties, were fabricated and tested in vitro and ex vivo. All materials remove SiO within an aqueous environment. Preliminary ex vivo results were very promising, opening new possibilities for SiO removal in vitreoretinal surgeries. This is the first report of an instrument that can lead to successful removal of SiO from the surface of IOL. In addition to the use of this instrument/material in medicine it can also be used in the industry, for example, retrieval of oil spills from bodies of water.

  14. Advanced Non-Destructive Assessment Technology to Determine the Aging of Silicon Containing Materials for Generation IV Nuclear Reactors

    Science.gov (United States)

    Koenig, T. W.; Olson, D. L.; Mishra, B.; King, J. C.; Fletcher, J.; Gerstenberger, L.; Lawrence, S.; Martin, A.; Mejia, C.; Meyer, M. K.; Kennedy, R.; Hu, L.; Kohse, G.; Terry, J.

    2011-06-01

    To create an in-situ, real-time method of monitoring neutron damage within a nuclear reactor core, irradiated silicon carbide samples are examined to correlate measurable variations in the material properties with neutron fluence levels experienced by the silicon carbide (SiC) during the irradiation process. The reaction by which phosphorus doping via thermal neutrons occurs in the silicon carbide samples is known to increase electron carrier density. A number of techniques are used to probe the properties of the SiC, including ultrasonic and Hall coefficient measurements, as well as high frequency impedance analysis. Gamma spectroscopy is also used to examine residual radioactivity resulting from irradiation activation of elements in the samples. Hall coefficient measurements produce the expected trend of increasing carrier concentration with higher fluence levels, while high frequency impedance analysis shows an increase in sample impedance with increasing fluence.

  15. Determinations of silicon and phosphorus in Pepperbush standard reference material by neutron activation and x-ray fluorescence methods

    International Nuclear Information System (INIS)

    Mizumoto, Yoshihiko; Nishio, Hirofumi; Hayashi, Takeshi; Kusakabe, Toshio; Iwata, Shiro.

    1987-01-01

    Silicon and phosphorus contents in Pepperbush standard reference material were determined by neutron activation and X-ray fluorescence methods. In neutron activation analysis, β-ray spectra of 32 P produced by 31 P(n,γ) 32 P reaction on Pepperbush and standard samples were measured by a low background β-ray spectrometer. In X-ray fluorescence analysis, the standard samples were prepared by mixing the Pepperbush powder with silicon dioxide and diammonium hydrogenphosphate. Characteristic X-rays from the samples were analyzed by a wavelength dispersive X-ray fluorescence spectrometer. From the β and X-ray intensities, silicon and phosphorus contents in Pepperbush were determined to be 1840 ± 80 and 1200 ± 50 μg g -1 , respectively. (author)

  16. Optimized readout configuration for PIXE spectrometers based on Silicon Drift Detectors: Architecture and performance

    International Nuclear Information System (INIS)

    Alberti, R.; Grassi, N.; Guazzoni, C.; Klatka, T.

    2009-01-01

    An optimized readout configuration based on a charge preamplifier with pulsed-reset has been designed for Silicon Drift Detectors (SDDs) to be used in Particle Induced X-ray Emission (PIXE) measurements. The customized readout electronics is able to manage the large pulses originated by the protons backscattered from the target material that would otherwise cause significant degradation of X-ray spectra and marked increase in dead time. In this way, the excellent performance of SDDs can be exploited in high-quality proton-induced spectroscopy of low- and medium-energy X-rays. This paper describes the designed readout architecture and the performance characterization carried out in a PIXE setup with MeV proton beams.

  17. Towards the Development of Electrical Biosensors Based on Nanostructured Porous Silicon

    Science.gov (United States)

    Recio-Sánchez, Gonzalo; Torres-Costa, Vicente; Manso, Miguel; Gallach, Darío; López-García, Juan; Martín-Palma, Raúl J.

    2010-01-01

    The typical large specific surface area and high reactivity of nanostructured porous silicon (nanoPS) make this material very suitable for the development of sensors. Moreover, its biocompatibility and biodegradability opens the way to the development of biosensors. As such, in this work the use of nanoPS in the field of electrical biosensing is explored. More specifically, nanoPS-based devices with Al/nanoPS/Al and Au-NiCr/nanoPS/Au-NiCr structures were fabricated for the electrical detection of glucose and Escherichia Coli bacteria at different concentrations. The experimental results show that the current-voltage characteristics of these symmetric metal/nanoPS/metal structures strongly depend on the presence/absence and concentration of species immobilized on the surface.

  18. Towards the Development of Electrical Biosensors Based on Nanostructured Porous Silicon

    Directory of Open Access Journals (Sweden)

    Raúl J. Martín-Palma

    2010-01-01

    Full Text Available The typical large specific surface area and high reactivity of nanostructured porous silicon (nanoPS make this material very suitable for the development of sensors. Moreover, its biocompatibility and biodegradability opens the way to the development of biosensors. As such, in this work the use of nanoPS in the field of electrical biosensing is explored. More specifically, nanoPS-based devices with Al/nanoPS/Al and Au-NiCr/nanoPS/Au-NiCr structures were fabricated for the electrical detection of glucose and Escherichia Coli bacteria at different concentrations. The experimental results show that the current-voltage characteristics of these symmetric metal/nanoPS/metal structures strongly depend on the presence/absence and concentration of species immobilized on the surface.

  19. Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-08-01

    The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

  20. Relationship of microstructure properties to oxygen impurities in nanocrystalline silicon photovoltaic materials

    Science.gov (United States)

    Xu, H.; Wen, C.; Liu, H.; Li, Z. P.; Shen, W. Z.

    2013-03-01

    We have fully investigated the correlation of microstructure properties and oxygen impurities in hydrogenated nanocrystalline silicon photovoltaic films. The achievement has been realized through a series of different hydrogen dilution ratio treatment by plasma enhanced chemical vapor deposition system. Raman scattering, x-ray diffraction, and ultraviolet-visible transmission techniques have been employed to characterize the physical structural characterization and to elucidate the structure evolution. The bonding configuration of the oxygen impurities was investigated by x-ray photoelectron spectroscopy and the Si-O stretching mode of infrared-transmission, indicating that the films were well oxidized in SiO2 form. Based on the consistence between the proposed structure factor and the oxygen content, we have demonstrated that there are two dominant disordered structure regions closely related to the post-oxidation contamination: plate-like configuration and clustered microvoids.

  1. Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

    Science.gov (United States)

    Dang, Zhiya; Breese, Mark Bh; Recio-Sánchez, Gonzalo; Azimi, Sara; Song, Jiao; Liang, Haidong; Banas, Agnieszka; Torres-Costa, Vicente; Martín-Palma, Raúl José

    2012-07-23

    A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

  2. CH(3)NH(3)PbI(3) perovskite / silicon tandem solar cells: characterization based optical simulations.

    Science.gov (United States)

    Filipič, Miha; Löper, Philipp; Niesen, Bjoern; De Wolf, Stefaan; Krč, Janez; Ballif, Christophe; Topič, Marko

    2015-04-06

    In this study we analyze and discuss the optical properties of various tandem architectures: mechanically stacked (four-terminal) and monolithically integrated (two-terminal) tandem devices, consisting of a methyl ammonium lead triiodide (CH(3)NH(3)PbI(3)) perovskite top solar cell and a crystalline silicon bottom solar cell. We provide layer thickness optimization guidelines and give estimates of the maximum tandem efficiencies based on state-of-the-art sub cells. We use experimental complex refractive index spectra for all involved materials as input data for an in-house developed optical simulator CROWM. Our characterization based simulations forecast that with optimized layer thicknesses the four-terminal configuration enables efficiencies over 30%, well above the current single-junction crystalline silicon cell record of 25.6%. Efficiencies over 30% can also be achieved with a two-terminal monolithic integration of the sub-cells, combined with proper selection of layer thicknesses.

  3. Study program to develop and evaluate die and container materials for the growth of silicon ribbons. [for development of low cost solar cells

    Science.gov (United States)

    Addington, L. A.; Ownby, P. D.; Yu, B. B.; Barsoum, M. W.; Romero, H. V.; Zealer, B. G.

    1979-01-01

    The development and evaluation of proprietary coatings of pure silicon carbide, silicon nitride, and aluminum nitride on less pure hot pressed substrates of the respective ceramic materials, is described. Silicon sessile drop experiments were performed on coated test specimens under controlled oxygen partial pressure. Prior to testing, X-ray diffraction and SEM characterization was performed. The reaction interfaces were characterized after testing with optical and scanning electron microscopy and Auger electron spectroscopy. Increasing the oxygen partial pressure was found to increase the molten silicon contact angle, apparently because adsorbed oxygen lowers the solid-vapor interfacial free energy. It was also found that adsorbed oxygen increased the degree of attack of molten silicon upon the chemical vapor deposited coatings. Cost projections show that reasonably priced, coated, molten silicon resistant refractory material shapes are obtainable.

  4. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  5. Porous silicon based micro-opto-electro-mechanical-systems (MOEMS) components for free space optical interconnects

    Science.gov (United States)

    Song, Da

    2008-02-01

    One of the major challenges confronting the current integrated circuits (IC) industry is the metal "interconnect bottleneck". To overcome this obstacle, free space optical interconnects (FSOIs) can be used to address the demand for high speed data transmission, multi-functionality and multi-dimensional integration for the next generation IC. One of the crucial elements in FSOIs system is to develop a high performance and flexible optical network to transform the incoming optical signal into a distributed set of optical signals whose direction, alignment and power can be independently controlled. Among all the optical materials for the realization of FSOI components, porous silicon (PSi) is one of the most promising candidates because of its unique optical properties, flexible fabrication methods and integration with conventional IC material sets. PSi-based Distributed Bragg Reflector (DBR) and Fabry-Perot (F-P) structures with unique optical properties are realized by electrochemical etching of silicon. By incorporating PSi optical structures with Micro-Opto-Electro-Mechanical-Systems (MOEMS), several components required for FSOI have been developed. The first type of component is the out-of-plane freestanding optical switch. Implementing a PSi DBR structure as an optically active region, the device can realize channel selection by changing the tilting angle of the micromirror supported by the thermal bimorph actuator. All the fabricated optical switches have reached kHz working frequency and life time of millions of cycles. The second type of component is the in-plane tunable optical filter. By introducing PSi F-P structure into the in-plane PSi film, a thermally tunable optical filter with a sensitivity of 7.9nm/V has been realized for add/drop optical signal selection. Also, for the first time, a new type of PSi based reconfigurable diffractive optical element (DOE) has been developed. By using patterned photoresist as a protective mask for electrochemical

  6. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  7. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  8. Silicon nanowires nanogenerator based on the piezoelectricity of alpha-quartz.

    Science.gov (United States)

    Yin, Kui; Lin, Haiyang; Cai, Qian; Zhao, Yi; Lee, Shuit-Tong; Hu, Fei; Shao, Mingwang

    2013-12-21

    Silicon nanowires are important semiconductor with core/shell structure. In this work, the piezoelectric material alpha-quartz was grown in the interface of silicon nanowires by thermal treatment at 600 °C for 0.5 h. These nanowires were employed as starting materials to fabricate piezoelectric nanogenerators, which could convert kinetic energy into electrical one, exhibiting an output voltage of 36.5 V and a response current of 1.4 μA under a free-falling object of 300 g at a height of 30 cm.

  9. Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments

    Energy Technology Data Exchange (ETDEWEB)

    Zegrya, G. G. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Savenkov, G. G. [Saint-Petersburg State Engineering Institute (Technical University) (Russian Federation); Morozov, V. A. [Saint-Petersburg State University (Russian Federation); Zegrya, A. G.; Ulin, N. V., E-mail: Ulin@mail.ioffe.ru; Ulin, V. P. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lukin, A. A. [Saint-Petersburg State Engineering Institute (Technical University) (Russian Federation); Bragin, V. A.; Oskin, I. A. [AO Scientific Production Association Poisk (Russian Federation); Mikhailov, Yu. M. [Russian Academy of Sciences, Institute of Problems of Chemical Physics (Russian Federation)

    2017-04-15

    The sensitivity of an energy-packed compound based on nanoporous silicon and calcium perchlorate to a high-current electron beam is studied. The initiation of explosive transformations in a mixture of potassium picrate with a highly dispersed powder of boron-doped silicon by means of a high-voltage discharge is examined. It is shown that explosive transformation modes (combustion and explosion) appear in the energy-packed compound under study upon its treatment with an electron beam. A relationship is established between the explosive transformation modes and the density of the energy-packed compound and between the breakdown (initiation) voltage and the mass fraction of the silicon powder.

  10. A study of luminescence from silicon-rich silica fabricated by plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Trwoga, P.F.

    1998-01-01

    Silicon is the most studied electronic material known to man and dominates the electronics industry in its use as a semiconductors for nearly all integrated electronics. However, optoelectronics is almost entirely based on III-V materials. This technology is used because silicon is a very inefficient light source, whereas the III-V band structure can lend itself to efficient light emission by electron injection. However, due to the overwhelming dominance of silicon based electronics it is still a highly desirable goal to generate light efficiently from silicon based materials. Recently, studies have demonstrated that efficient visible luminescence can be obtained from certain novel forms of silicon. These materials include porous silicon, hydrogenated amorphous silicon, and silicon-rich silica (SiO x x x is studied in detail; in addition, electroluminescence and rare-earth doping of silicon-rich silica is also addressed. (author)

  11. Electron spin resonance investigaton of semiconductor materials for application in thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Lihong

    2012-07-01

    In the present work, hydrogenated silicon and its alloys silicon carbide and silicon oxide have been investigated using electron spin resonance (ESR). The microstructure of these materials ranges from highly crystalline to amorphous. The correlation between the paramagnetic defects, microstructure, optical and electrical properties has been discussed. Correspondingly, these properties were characterized by the spin density (N{sub S}), g-value and the lineshape of ESR spectra, Infrared (I{sup IR}{sub C}) and/or Raman crystallinity (I{sup RS}{sub C}) as well as optical absorption and electrical dark conductivity ({sigma}{sub D}). 1. As the light absorber, Si layers essentially should have low defect density and good stability against light exposure. The spin density (N{sub S}) measured by ESR is often used as a measure for the paramagnetic defect density (N{sub D}) in the material. However, ESR sample preparation procedures can potentially cause discrepancy between N{sub S} and N{sub D}. Using Mo-foil, Al-foil and ZnO:Al-covered glass as sacrificial substrates, {mu}c-Si:H and a-Si:H films were deposited by plasma-enhanced chemical vapor deposition (PECVD), and ESR powder samples have been prepared with corresponding procedures. Possible preparation-related metastability and instability effects have been investigated in terms of substrate dependence, HCl-etching and atmosphere exposure. A sequence of 'preparation - annealing - air-exposure - annealing' has been designed to investigate the metastability and instability effects. N{sub S} after post-preparation air exposure is higher than in the annealed states, especially for the highly crystalline {mu}c-Si:H material the discrepancy reached one order of magnitude. Low temperature ESR measurements at 40 K indicated that atmospheric exposure leads to a redistribution of the defect states which in turn influence the evaluated N{sub S}. In annealed conditions the samples tend to have lower N{sub S} presumably due

  12. Efficient Flame Detection and Early Warning Sensors on Combustible Materials Using Hierarchical Graphene Oxide/Silicone Coatings.

    Science.gov (United States)

    Wu, Qian; Gong, Li-Xiu; Li, Yang; Cao, Cheng-Fei; Tang, Long-Cheng; Wu, Lianbin; Zhao, Li; Zhang, Guo-Dong; Li, Shi-Neng; Gao, Jiefeng; Li, Yongjin; Mai, Yiu-Wing

    2018-01-23

    Design and development of smart sensors for rapid flame detection in postcombustion and early fire warning in precombustion situations are critically needed to improve the fire safety of combustible materials in many applications. Herein, we describe the fabrication of hierarchical coatings created by assembling a multilayered graphene oxide (GO)/silicone structure onto different combustible substrate materials. The resulting coatings exhibit distinct temperature-responsive electrical resistance change as efficient early warning sensors for detecting abnormal high environmental temperature, thus enabling fire prevention below the ignition temperature of combustible materials. After encountering a flame attack, we demonstrate extremely rapid flame detection response in 2-3 s and excellent flame self-extinguishing retardancy for the multilayered GO/silicone structure that can be synergistically transformed to a multiscale graphene/nanosilica protection layer. The hierarchical coatings developed are promising for fire prevention and protection applications in various critical fire risk and related perilous circumstances.

  13. Graphene as a transparent electrode for amorphous silicon-based solar cells

    International Nuclear Information System (INIS)

    Vaianella, F.; Rosolen, G.; Maes, B.

    2015-01-01

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles

  14. Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

    Science.gov (United States)

    Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

    2018-05-01

    An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

  15. Graphene as a transparent electrode for amorphous silicon-based solar cells

    Science.gov (United States)

    Vaianella, F.; Rosolen, G.; Maes, B.

    2015-06-01

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

  16. Graphene as a transparent electrode for amorphous silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vaianella, F., E-mail: Fabio.Vaianella@umons.ac.be; Rosolen, G.; Maes, B. [Micro- and Nanophotonic Materials Group, Faculty of Science, University of Mons, 20 place du Parc, B-7000 Mons (Belgium)

    2015-06-28

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

  17. Surface and interfacial chemistry of high-k dielectric and interconnect materials on silicon

    Science.gov (United States)

    Kirsch, Paul Daniel

    Surfaces and interfaces play a critical role in the manufacture and function of silicon based integrated circuits. It is therefore reasonable to study the chemistries at these surfaces and interfaces to improve existing processes and to develop new ones. Model barium strontium titanate high-k dielectric systems have been deposited on ultrathin silicon oxynitride in ultrahigh vacuum. The resulting nanostructures are characterized with secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). An interfacial reaction between Ba and Sr atoms and SiOxNy was found to create silicates, BaSixOy or SrSi xOy. Inclusion of N in the interfacial oxide decreased silicate formation in both Ba and Sr systems. Furthermore, inclusion of N in the interfacial oxide decreased the penetration of Ba and Sr containing species, such as silicides and silicates. Sputter deposited HfO2 was studied on nitrided and unnitrided Si(100) surfaces. XPS and SIMS were used to verify the presence of interfacial HfSixOy and estimate its relative amount on both nitrided and unnitrided samples. More HfSixOy formed without the SiNx interfacial layer. These interfacial chemistry results are then used to explain the electrical measurements obtained from metal oxide semiconductor (MOS) capacitors. MOS capacitors with interfacial SiNx exhibit reduced leakage current and increased capacitance. Lastly, surface science techniques were used to develop a processing technique for reducing thin films of copper (II) and copper (I) oxide to copper. Deuterium atoms (D*) and methyl radicals (CH3*) were shown to reduce Cu 2+ and/or Cu1+ to Cu0 within 30 min at a surface temperature of 400 K under a flux of 1 x 1015 atoms/cm2s. Temperature programmed desorption experiments suggest that oxygen leaves the surface as D2O and CO2 for the D* and CH3* treated surfaces, respectively.

  18. Elastic silicone encapsulation of n-hexadecyl bromide by microfluidic approach as novel microencapsulated phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Zhenjin [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010 (China); Su, Lin; Li, Jing; Yang, Ruizhuang; Zhang, Zhanwen; Liu, Meifang; Li, Jie [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Li, Bo, E-mail: LB6711@126.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China)

    2014-08-20

    Highlights: • n-Hexadecyl bromide was encapsuled in elastic silicone shell. • The surfaces of microcapsules were smooth and the cross sections were compact. • Latent heat of microcapsules was 76.35 J g{sup −1}. • The microencapsulation ratio was 49 wt.%. • The microcapsules had good thermal stability. - Abstract: The elastic silicone/n-hexadecyl bromide microcapsules were prepared as novel microencapsulated phase change materials by microfluidic approach with the co-flowing channels, where the double oil1-in-oil2-in-water (O1/O2/W) droplets with a core–shell geometry were fabricated. The thermal characterizations of the microcapsules were investigated using differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). The DSC results showed that the microcapsules had good energy storage capacity with melting and freezing enthalpies 76.35 J g{sup −1} and 78.67 J g{sup −1}, respectively. The TGA investigation showed that the microcapsules had good thermal stability. The surfaces of microcapsules were smooth and the cross sections were compact from the results of optical microscope and scanning electron microscopy (SEM). Optical microscope showed that the silicone shell can provide expansion place due to its elastic property. Therefore, the silicone/n-hexadecyl bromide microcapsules showed good potential as thermal regulating textile and thermal insulation materials.

  19. Elastic silicone encapsulation of n-hexadecyl bromide by microfluidic approach as novel microencapsulated phase change materials

    International Nuclear Information System (INIS)

    Fu, Zhenjin; Su, Lin; Li, Jing; Yang, Ruizhuang; Zhang, Zhanwen; Liu, Meifang; Li, Jie; Li, Bo

    2014-01-01

    Highlights: • n-Hexadecyl bromide was encapsuled in elastic silicone shell. • The surfaces of microcapsules were smooth and the cross sections were compact. • Latent heat of microcapsules was 76.35 J g −1 . • The microencapsulation ratio was 49 wt.%. • The microcapsules had good thermal stability. - Abstract: The elastic silicone/n-hexadecyl bromide microcapsules were prepared as novel microencapsulated phase change materials by microfluidic approach with the co-flowing channels, where the double oil1-in-oil2-in-water (O1/O2/W) droplets with a core–shell geometry were fabricated. The thermal characterizations of the microcapsules were investigated using differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). The DSC results showed that the microcapsules had good energy storage capacity with melting and freezing enthalpies 76.35 J g −1 and 78.67 J g −1 , respectively. The TGA investigation showed that the microcapsules had good thermal stability. The surfaces of microcapsules were smooth and the cross sections were compact from the results of optical microscope and scanning electron microscopy (SEM). Optical microscope showed that the silicone shell can provide expansion place due to its elastic property. Therefore, the silicone/n-hexadecyl bromide microcapsules showed good potential as thermal regulating textile and thermal insulation materials

  20. Quantum engineering of transistors based on 2D materials heterostructures

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  1. Quantum engineering of transistors based on 2D materials heterostructures.

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  2. Packaging based on polymeric materials

    Directory of Open Access Journals (Sweden)

    Jovanović Slobodan M.

    2005-01-01

    Full Text Available In the past two years the consumption of common in the developed countries world wide (high tonnage polymers for packaging has approached a value of 50 wt.%. In the same period more than 50% of the packaging units on the world market were made of polymeric materials despite the fact that polymeric materials present 17 wt.% of all packaging materials. The basic properties of polymeric materials and their environmental and economical advantages, providing them such a position among packaging materials, are presented in this article. Recycling methods, as well as the development trends of polymeric packaging materials are also presented.

  3. Compact temperature-insensitive modulator based on a silicon microring assistant Mach—Zehnder interferometer

    International Nuclear Information System (INIS)

    Zhang Xue-Jian; Feng Xue; Zhang Deng-Ke; Huang Yi-Dong

    2012-01-01

    On the silicon-on-insulator platform, an ultra compact temperature-insensitive modulator based on a cascaded microring assistant Mach—Zehnder interferometer is proposed and demonstrated with numerical simulation. According to the calculated results, the tolerated variation of ambient temperature can be as high as 134 °C while the footprint of such a silicon modulator is only 340 μm 2 . (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  4. Silicon based mechanic-photonic wavelength converter for infrared photo-detection

    Science.gov (United States)

    Rudnitsky, Arkady; Agdarov, Sergey; Gulitsky, Konstantin; Zalevsky, Zeev

    2017-06-01

    In this paper we present a new concept to realize a mechanic-photonic wavelength converter in silicon chip by construction of nanorods and by modulating the input illumination at temporal frequency matched to the mechanic resonance of the nanorods. The use case is to realize an infrared photo detector in silicon which is not based on absorption but rather on the mechanical interaction of the nanorods with the incoming illumination.

  5. Electrochemical characteristics of bundle-type silicon nanorods as an anode material for lithium ion batteries

    International Nuclear Information System (INIS)

    Nguyen, Si Hieu; Lim, Jong Choo; Lee, Joong Kee

    2012-01-01

    Highlights: ► A metal-assisted chemical etching technique was performed on Si thin films. ► The etching process resulted in the formation of bundle-type Si nanorods. ► The morphology of Si electrodes closely relate to electrochemical characteristics. - Abstract: In order to prepare bundle-type silicon nanorods, a silver-assisted chemical etching technique was used to modify a 1.6 μm silicon thin film, which was deposited on Cu foil by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition. The bundle-type silicon nanorods on Cu foil were employed as anodes for a lithium secondary battery, without further treatment. The electrochemical characteristics of the pristine silicon thin film anodes and the bundle-type silicon nanorod anodes are different from one another. The electrochemical performance of the bundle-type silicon nanorod anodes exceeded that of the pristine Si thin film anodes. The specific capacity of the bundle-type silicon nanorod anodes is much higher than 3000 mAh g −1 at the first charge (Li insertion) cycle. The coulombic efficiency of bundle-type silicon anodes was stable at more than 97%, and the charge capacity remained at 1420 mAh g −1 , even after 100 cycles of charging and discharging. The results from the differential voltage analysis showed a side reaction at around 0.44–0.5 V, and the specific potential of this side reaction decreased after each cycle. The apparent diffusion coefficients of the two anode types were in the range of 10 −13 –10 −16 cm 2 s −1 in the first cycle. In subsequent charge cycles, these values for the silicon thin film anodes and the silicon nanorod bundle anode were approximately 10 −12 –10 −14 and 10 −13 –10 −15 cm 2 s −1 , respectively.

  6. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    Science.gov (United States)

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-06

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

  7. Low cost silicon solar array project silicon materials task: Establishment of the feasibility of a process capable of low-cost, high volume production of silane (step 1) and the pyrolysis of silane to semiconductor-grade silicon (step 2)

    Science.gov (United States)

    Breneman, W. C.; Cheung, H.; Farrier, E. G.; Morihara, H.

    1977-01-01

    A quartz fluid bed reactor capable of operating at temperatures of up to 1000 C was designed, constructed, and successfully operated. During a 30 minute experiment, silane was decomposed within the reactor with no pyrolysis occurring on the reactor wall or on the gas injection system. A hammer mill/roller-crusher system appeared to be the most practical method for producing seed material from bulk silicon. No measurable impurities were detected in the silicon powder produced by the free space reactor, using the cathode layer emission spectroscopic technique. Impurity concentration followed by emission spectroscopic examination of the residue indicated a total impurity level of 2 micrograms/gram. A pellet cast from this powder had an electrical resistivity of 35 to 45 ohm-cm and P-type conductivity.

  8. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    Science.gov (United States)

    Wananuruksawong, R.; Jinawath, S.; Padipatvuthikul, P.; Wasanapiarnpong, T.

    2011-10-01

    Silicon nitride (Si3N4) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si3N4 ceramic as a dental core material. The white Si3N4 was prepared by pressureless sintering at relative low sintering temperature of 1650 °C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si3N4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si3N4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder (tube furnace between 1000-1200°C. The veneered specimens fired at 1100°C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98×10-6 °C-1, rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  9. Oxidation behaviour of silicon-free tungsten alloys for use as the first wall material

    Science.gov (United States)

    Koch, F.; Brinkmann, J.; Lindig, S.; Mishra, T. P.; Linsmeier, Ch

    2011-12-01

    The use of self-passivating tungsten alloys as armour material of the first wall of a fusion power reactor may be advantageous concerning safety issues. In earlier studies good performance of the system W-Cr-Si was demonstrated. Thin films of such alloys showed a strongly reduced oxidation rate compared to pure tungsten. However, the formation of brittle tungsten silicides may be disadvantageous for the powder metallurgical production of bulk W-Cr-Si alloys if a good workability is needed. This paper shows the results of screening tests to identify suitable silicon-free alloys with distinguished self-passivation and a potentially good workability. Of all the tested systems W-Cr-Ti alloys showed the most promising results. The oxidation rate was even lower than the one of W-Cr-Si alloys, the reduction factor was about four orders of magnitude compared to pure tungsten. This performance could be conserved even if the content of alloying elements was reduced.

  10. Oxidation behaviour of silicon-free tungsten alloys for use as the first wall material

    International Nuclear Information System (INIS)

    Koch, F; Brinkmann, J; Lindig, S; Mishra, T P; Linsmeier, Ch

    2011-01-01

    The use of self-passivating tungsten alloys as armour material of the first wall of a fusion power reactor may be advantageous concerning safety issues. In earlier studies good performance of the system W-Cr-Si was demonstrated. Thin films of such alloys showed a strongly reduced oxidation rate compared to pure tungsten. However, the formation of brittle tungsten silicides may be disadvantageous for the powder metallurgical production of bulk W-Cr-Si alloys if a good workability is needed. This paper shows the results of screening tests to identify suitable silicon-free alloys with distinguished self-passivation and a potentially good workability. Of all the tested systems W-Cr-Ti alloys showed the most promising results. The oxidation rate was even lower than the one of W-Cr-Si alloys, the reduction factor was about four orders of magnitude compared to pure tungsten. This performance could be conserved even if the content of alloying elements was reduced.

  11. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    International Nuclear Information System (INIS)

    Wananuruksawong, R; Jinawath, S; Wasanapiarnpong, T; Padipatvuthikul, P

    2011-01-01

    Silicon nitride (Si 3 N 4 ) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si 3 N 4 ceramic as a dental core material. The white Si 3 N 4 was prepared by pressureless sintering at relative low sintering temperature of 1650 deg. C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si 3 N 4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si 3 N 4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder ( 2 O 3 - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si 3 N 4 specimens, the firing was performed in electric tube furnace between 1000-1200 deg. C. The veneered specimens fired at 1100 deg. C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98x10 -6 deg. C -1 , rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  12. 14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Extended Abstracts and Papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2004-08-01

    The 14th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. It will offer an excellent opportunity for researchers in private industry and at universities to prioritize mutual needs for future collaborative research. The workshop is intended to address the fundamental properties of PV silicon, new solar cell designs, advanced solar cell processing techniques, and cell-related module issues. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions will review recent advances in crystal growth, new cell designs, new processes and process characterization techniques, cell fabrication approaches suitable for future manufacturing demands, and solar cell encapsulation. This year's theme, ''Crystalline Si Solar Cells: Leapfrogging the Barriers,'' reflects the continued success of crystalline Si PV in overcoming technological barriers to improve solar cell performance and lower the cost of Si PV. The workshop will consist of presentations by invited speakers, followed by discussion sessions. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV. The sessions will include: Advances in crystal growth and material issues; Impurities and defects; Dynamics during device processing; Passivation; High-efficiency Si solar cells; Advanced processing; Thin Si solar cells; and Solar cell reliability and module issues.

  13. Vanadium based materials as electrode materials for high performance supercapacitors

    Science.gov (United States)

    Yan, Yan; Li, Bing; Guo, Wei; Pang, Huan; Xue, Huaiguo

    2016-10-01

    As a kind of supercapacitors, pseudocapacitors have attracted wide attention in recent years. The capacitance of the electrochemical capacitors based on pseudocapacitance arises mainly from redox reactions between electrolytes and active materials. These materials usually have several oxidation states for oxidation and reduction. Many research teams have focused on the development of an alternative material for electrochemical capacitors. Many transition metal oxides have been shown to be suitable as electrode materials of electrochemical capacitors. Among them, vanadium based materials are being developed for this purpose. Vanadium based materials are known as one of the best active materials for high power/energy density electrochemical capacitors due to its outstanding specific capacitance and long cycle life, high conductivity and good electrochemical reversibility. There are different kinds of synthetic methods such as sol-gel hydrothermal/solvothermal method, template method, electrospinning method, atomic layer deposition, and electrodeposition method that have been successfully applied to prepare vanadium based electrode materials. In our review, we give an overall summary and evaluation of the recent progress in the research of vanadium based materials for electrochemical capacitors that include synthesis methods, the electrochemical performances of the electrode materials and the devices.

  14. Scalable gamma-ray camera for wide-area search based on silicon photomultipliers array

    Science.gov (United States)

    Jeong, Manhee; Van, Benjamin; Wells, Byron T.; D'Aries, Lawrence J.; Hammig, Mark D.

    2018-03-01

    Portable coded-aperture imaging systems based on scintillators and semiconductors have found use in a variety of radiological applications. For stand-off detection of weakly emitting materials, large volume detectors can facilitate the rapid localization of emitting materials. We describe a scalable coded-aperture imaging system based on 5.02 × 5.02 cm2 CsI(Tl) scintillator modules, each partitioned into 4 × 4 × 20 mm3 pixels that are optically coupled to 12 × 12 pixel silicon photo-multiplier (SiPM) arrays. The 144 pixels per module are read-out with a resistor-based charge-division circuit that reduces the readout outputs from 144 to four signals per module, from which the interaction position and total deposited energy can be extracted. All 144 CsI(Tl) pixels are readily distinguishable with an average energy resolution, at 662 keV, of 13.7% FWHM, a peak-to-valley ratio of 8.2, and a peak-to-Compton ratio of 2.9. The detector module is composed of a SiPM array coupled with a 2 cm thick scintillator and modified uniformly redundant array mask. For the image reconstruction, cross correlation and maximum likelihood expectation maximization methods are used. The system shows a field of view of 45° and an angular resolution of 4.7° FWHM.

  15. Fabrication of porous silicon based tunable distributed Bragg reflectors by anodic etching of irradiated silicon

    International Nuclear Information System (INIS)

    Vendamani, V.S.; Dang, Z.Y.; Ramana, P.; Pathak, A.P.; Ravi Kanth Kumar, V.V.; Breese, M.B.H.; Nageswara Rao, S.V.S.

    2015-01-01

    Highlights: • Fabrication of tunable distributed Bragg reflectors (DBRs) by gamma/ion irradiation of Si and subsequent formation of porous silicon multilayers has been described. • The central wavelength and the width of the stop band are found to decrease with increase in irradiation fluence. • The Si samples irradiated with highest fluence of 2 × 10 13 ions/cm 2 (100 MeV Ag ions) and 60 kGy (gamma) showed a central reflection at λ = 476 nm and 544 nm respectively, in contrast to un-irradiated sample, where λ = 635 nm. • The observed changes in the central wavelengths are attributed to the density of defects generated by gamma and ion irradiation in c-Si. • This study is expected to provide useful information for fabricating tunable wave reflectors for optical communication and other device applications. - Abstract: We report a study on the fabrication of tunable distributed Bragg reflectors (DBRs) by gamma/ion irradiation of Si and subsequent formation of porous silicon multilayers. Porous Si multilayers with 50 bilayers were designed to achieve high intensity of reflection. The reflection spectra appear to have a broad continuous band between 400 and 800 nm with a distinct central wavelength corresponding to different wave reflectors. The central wavelength and the width of the stop band are found to decrease with increase in irradiation fluence. The Si samples irradiated with highest fluence of 2 × 10 13 ions/cm 2 (100 MeV Ag ions) and 60 kGy (gamma) showed a central reflection at λ = 476 nm and 544 nm respectively, in contrast to un-irradiated sample, where λ = 635 nm. The observed changes are attributed to the density of defects generated by gamma and ion irradiation in c-Si. These results suggest that the gamma irradiation is a convenient and alternative method to tune the central wavelength of reflection without creating high density of defects by high energy ion implantation. This study is expected to provide useful information for

  16. Development of a Silicon Based Electron Beam Transmission Window for Use in a KrF Excimer Laser System

    CERN Document Server

    Gentile, C A; Hartfield, J W; Hawryluk, R J; Hegeler, F; Heitzenroeder, P J; Jun, C H; Ku, L P; Lamarche, P H; Myers, M C; Parker, J J; Parsells, R F; Payen, M; Raftopoulos, S; Sethian, J D

    2002-01-01

    The Princeton Plasma Physics Laboratory (PPPL), in collaboration with the Naval Research Laboratory (NRL), is currently investigating various novel materials (single crystal silicon, , and ) for use as electron-beam transmission windows in a KrF excimer laser system. The primary function of the window is to isolate the active medium (excimer gas) from the excitation mechanism (field-emission diodes). Chosen window geometry must accommodate electron energy transfer greater than 80% (750 keV), while maintaining structural integrity during mechanical load (1.3 to 2.0 atm base pressure differential, approximate 0.5 atm cyclic pressure amplitude, 5 Hz repetition rate) and thermal load across the entire hibachi area (approximate 0.9 W centre dot cm superscript ''-2''). In addition, the window must be chemically resistant to attack by fluorine free-radicals (hydrofluoric acid, secondary). In accordance with these structural, functional, and operational parameters, a 22.4 mm square silicon prototype window, coated w...

  17. Performance of conversion efficiency of a crystalline silicon solar cell with base doping density

    Directory of Open Access Journals (Sweden)

    Gokhan Sahin

    Full Text Available In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar. Keywords: Crystalline silicon solar cell, Base doping density, Series resistance, Shunt resistance, Conversion efficiency

  18. Corrosion Processes of the CANDU Steam Generator Materials in the Presence of Silicon Compounds

    International Nuclear Information System (INIS)

    Lucan, Dumitra; Fulger, Manuela; Velciu, Lucian; Lucan, Georgiana; Jinescu, Gheorghita

    2006-01-01

    The feedwater that enters the steam generators (SG) under normal operating conditions is extremely pure but, however, it contains low levels (generally in the μg/l concentration range) of impurities such as iron, chloride, sulphate, silicate, etc. When water is converted into steam and exits the steam generator, the non-volatile impurities are left behind. As a result of their concentration, the bulk steam generator water is considerably higher than the one in the feedwater. Nevertheless, the concentrations of corrosive impurities are in general sufficiently low so that the bulk water is not significantly aggressive towards steam generator materials. The impurities and corrosion products existing in the steam generator concentrate in the porous deposits on the steam generator tubesheet. The chemical reactions that take place between the components of concentrated solutions generate an aggressive environment. The presence of this environment and of the tubesheet crevices lead to localized corrosion and thus the same tubes cannot ensure the heat transfer between the fluids of the primary and secondary circuits. Thus, it becomes necessary the understanding of the corrosion process that develops into SG secondary side. The purpose of this paper is the assessment of corrosion behavior of the tubes materials (Incoloy-800) at the normal secondary circuit parameters (temperature = 2600 deg C, pressure = 5.1 MPa). The testing environment was demineralized water containing silicon compounds, at a pH=9.5 regulated with morpholine and cyclohexyl-amine (all volatile treatment - AVT). The paper presents the results of metallographic examinations as well as the results of electrochemical measurements. (authors)

  19. Hydrogenated amorphous silicon radiation detectors: Material parameters; radiation hardness; charge collection

    International Nuclear Information System (INIS)

    Qureshi, S.

    1991-01-01

    Properties of hydrogenated amorphous silicon p-i-n diodes relevant to radiation detection applications were studied. The interest in using this material for radiation detection applications in physics and medicine was motivated by its high radiation hardness and the fact that it can be deposited over large area at relatively low cost. Thick, fully depleted a-Si:H diodes are required for sufficient energy deposition by a charged particle and better signal to noise ratio. A sizeable electric field is essential for charge collection in a -Si:H diodes. The large density of ionized defects that exist in the i layer when the diode is under DC bias causes the electric field to be uniform. Material parameters, namely carrier mobility and lifetime and the ionized defect density in thick a-Si:H p-i-n diodes were studied by the transient photoconductivity method. The increase in diode leakage current with reverse bias over the operating bias was consistent with the Poole-Frenkel effect, involving excitation of carriers from neutral defects. The diode noise over the operating voltage range was completely explained in terms of the shot noise component for CR-(RC) 4 (pseudo-Gaussian) shaping at 3 μs shaping time and the noise component at 0 V bias (delta and thermal noise) added in quadrature. Irradiation with 1 Mev neutrons produced no significant degradation in leakage current and noise at fluences exceeding 4 x 10 14 cm -2 . Irradiation with 1.4 Mev proton fluence of 1 x 10 14 cm -2 decreased carrier lifetime by a factor of ∼4. Degradation in leakage current and noise became significant at proton fluence of ∼10 13 cm -2

  20. Carbon nanotube-coated silicone as a flexible and electrically conductive biomedical material

    International Nuclear Information System (INIS)

    Matsuoka, Makoto; Akasaka, Tsukasa; Totsuka, Yasunori; Watari, Fumio

    2012-01-01

    Artificial cell scaffolds that support cell adhesion, growth, and organization need to be fabricated for various purposes. Recently, there have been increasing reports of cell patterning using electrical fields. We fabricated scaffolds consisting of silicone sheets coated with single-walled (SW) or multi-walled (MW) carbon nanotubes (CNTs) and evaluated their electrical properties and biocompatibility. We also performed cell alignment with dielectrophoresis using CNT-coated sheets as electrodes. Silicone coated with 10 μg/cm 2 SWCNTs exhibited the least sheet resistance (0.8 kΩ/sq); its conductivity was maintained even after 100 stretching cycles. CNT coating also improved cell adhesion and proliferation. When an electric field was applied to the cell suspension introduced on the CNT-coated scaffold, the cells became aligned in a pearl-chain pattern. These results indicate that CNT coating not only provides electro-conductivity but also promotes cell adhesion to the silicone scaffold; cells seeded on the scaffold can be organized using electricity. These findings demonstrate that CNT-coated silicone can be useful as a biocompatible scaffold. - Highlights: ► We fabricated a CNT-coated silicone which has conductivity and biocompatibility. ► The conductivity was maintained after 100 cycles of stretching. ► CNT coatings enabled C2C12 cells adhere to the silicone surface. ► Cells were aligned with dielectrophoresis between CNT-coated silicone surfaces.

  1. Analysis of silicon-based integrated photovoltaic-electrochemical hydrogen generation system under varying temperature and illumination

    Institute of Scientific and Technical Information of China (English)

    Vishwa Bhatt; Brijesh Tripathi; Pankaj Yadav; Manoj Kumar

    2017-01-01

    Last decade witnessed tremendous research and development in the area of photo-electrolytic hydrogen generation using chemically stable nanostructured photo-cathode/anode materials.Due to intimately coupled charge separation and photo-catalytic processes,it is very difficult to optimize individual components of such system leading to a very low demonstrated solar-to-fuel efficiency (SFE) of less than 1%.Recently there has been growing interest in an integrated photovoltaic-electrochemical (PV-EC) system based on GaAs solar cells with the demonstrated SFE of 24.5% under concentrated illumination condition.But a high cost of GaAs based solar cells and recent price drop of poly-crystalline silicon (pc-Si) solar cells motivated researchers to explore silicon based integrated PV-EC system.In this paper a theoretical framework is introduced to model silicon-based integrated PV-EC device.The theoretical framework is used to analyze the coupling and kinetic losses of a silicon solar cell based integrated PV-EC water splitting system under varying temperature and illumination.The kinetic loss occurs in the range of 19.1%-27.9% and coupling loss takes place in the range of 5.45%-6.74% with respect to varying illumination in the range of 20-100 mW/cm2.Similarly,the effect of varying temperature has severe impact on the performance of the system,wherein the coupling loss occurs in the range of 0.84%-21.51% for the temperature variation from 25 to 50 ℃.

  2. High-speed all-optical logic inverter based on stimulated Raman scattering in silicon nanocrystal.

    Science.gov (United States)

    Sen, Mrinal; Das, Mukul K

    2015-11-01

    In this paper, we propose a new device architecture for an all-optical logic inverter (NOT gate), which is cascadable with a similar device. The inverter is based on stimulated Raman scattering in silicon nanocrystal waveguides, which are embedded in a silicon photonic crystal structure. The Raman response function of silicon nanocrystal is evaluated to explore the transfer characteristic of the inverter. A maximum product criterion for the noise margin is taken to analyze the cascadability of the inverter. The time domain response of the inverter, which explores successful inversion operation at 100 Gb/s, is analyzed. Propagation delay of the inverter is on the order of 5 ps, which is less than the delay in most of the electronic logic families as of today. Overall dimension of the device is around 755  μm ×15  μm, which ensures integration compatibility with the matured silicon industry.

  3. Annealing effects on magnetic properties of silicone-coated iron-based soft magnetic composites

    Science.gov (United States)

    Wu, Shen; Sun, Aizhi; Zhai, Fuqiang; Wang, Jin; Zhang, Qian; Xu, Wenhuan; Logan, Philip; Volinsky, Alex A.

    2012-03-01

    This paper focuses on novel iron-based soft magnetic composites synthesis utilizing high thermal stability silicone resin to coat iron powder. The effect of an annealing treatment on the magnetic properties of synthesized magnets was investigated. The coated silicone insulating layer was characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy. Silicone uniformly coated the powder surface, resulting in a reduction of the imaginary part of the permeability, thereby increasing the electrical resistivity and the operating frequency of the synthesized magnets. The annealing treatment increased the initial permeability, the maximum permeability, and the magnetic induction, and decreased the coercivity. Annealing at 580 °C increased the maximum permeability by 72.5%. The result of annealing at 580 °C shows that the ferromagnetic resonance frequency increased from 2 kHz for conventional epoxy resin coated samples to 80 kHz for the silicone resin insulated composites.

  4. MEMS monocrystalline-silicon based thermal devices for chemical and microfluidic applications

    NARCIS (Netherlands)

    Mihailovic, M.

    2011-01-01

    This thesis explores the employment of monocrystalline silicon in microsystems as an active material for different thermal functions, such as heat generation and heat transfer by conduction. In chapter 1 applications that need thermal micro devices, micro heaters and micro heat exchangers, are

  5. Melting of Grey Cast Iron Based on Steel Scrap Using Silicon Carbide

    Directory of Open Access Journals (Sweden)

    Stojczew A.

    2014-08-01

    Full Text Available The paper presents the issue of synthetic cast iron production in the electric induction furnace exclusively on the steel scrap base. Silicon carbide and synthetic graphite were used as carburizers. The carburizers were introduced with solid charge or added on the liquid metal surface. The chemical analysis of the produced cast iron, the carburization efficiency and microstructure features were presented in the paper. It was stated that ferrosilicon can be replaced by silicon carbide during the synthetic cast iron melting process. However, due to its chemical composition (30% C and 70% Si which causes significant silicon content in iron increase, the carbon deficit can be partly compensated by the carburizer introduction. Moreover it was shown that the best carbon and silicon assimilation rate is obtained where the silicon carbide is being introduced together with solid charge. When it is thrown onto liquid alloy surface the efficiency of the process is almost two times less and the melting process lasts dozen minutes long. The microstructure of the cast iron produced with the silicon carbide shows more bulky graphite flakes than inside the microstructure of cast iron produced on the pig iron base.

  6. Electricity from photovoltaic solar cells: Flat-Plate Solar Array Project final Report. Volume II: Silicon material

    OpenAIRE

    Lutwack, R.

    1986-01-01

    The Flat-Plate Solar Array (FSA) Project, funded by the U.S. Government and managed by the Jet Propulsion Laboratory, was formed in 1975 to develop the module/array technology needed to attain widespread terrestrial use of photovoltaics by 1985. To accomplish this, the FSA Project established and managed an Industry, University, and Federal Government Team to perform the needed research and development. The goal of the Silicon Material Task, a part of the FSA Project, was to develop and ...

  7. Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic application

    International Nuclear Information System (INIS)

    Chehata, Nadia; Ltaief, Adnen; Ilahi, Bouraoui; Salem, Bassem; Bouazizi, Abdelaziz; Maaref, Hassen; Baron, Thierry

    2014-01-01

    Hybrid nanocomposites based on a nanoscale combination of organic and inorganic semiconductors are a promising way to enhance the performance of solar cells through a higher aspect ratio of the interface and the good processability of polymers. Nanocomposites are based on a heterojunction network between poly (2-methoxy-5-(2-ethyhexyl-oxy)-p-phenylenevinylene) (MEH-PPV) as an organic electron donor and silicon nanowires (SiNWs) as an inorganic electron acceptor. Nanowires (NWs) seem to be a promising material for this purpose, as they provide a large surface area for contact with the polymer and a designated conducting pathway whilst their volume is low. In this paper, silicon nanowires are introduced by mixing them into the polymer matrix. Hybrid nanocomposites films were deposited onto ITO substrate by spin coating method. Optical properties and photocurrent response were investigated. Charge transfer between the polymer and SiNWs has been demonstrated through photoluminescence measurements. The photocurrent density of ITO/MEH-PPV:SiNWs/Al structures have been obtained by J–V characteristics. The J sc value is about 0.39 µA/cm 2 . - Highlights: • SiNWs synthesis by Vapor–Liquid–Solid (VLS) mechanism. • SiNWs contribution to absorption spectra enhancement of MEH-PPV:SiNWs nanocomposites. • Decrease of PL intensity of MEH-PPV by addition of SiNWs. • Charge transfer process was taken place. • ITO/MEH-PPV:SiNWs/Al structure shows a photovoltaic effect, with a FF of 0.32

  8. Patient-specific pediatric silicone heart valve models based on 3D ultrasound

    Science.gov (United States)

    Ilina, Anna; Lasso, Andras; Jolley, Matthew A.; Wohler, Brittany; Nguyen, Alex; Scanlan, Adam; Baum, Zachary; McGowan, Frank; Fichtinger, Gabor

    2017-03-01

    PURPOSE: Patient-specific heart and valve models have shown promise as training and planning tools for heart surgery, but physically realistic valve models remain elusive. Available proprietary, simulation-focused heart valve models are generic adult mitral valves and do not allow for patient-specific modeling as may be needed for rare diseases such as congenitally abnormal valves. We propose creating silicone valve models from a 3D-printed plastic mold as a solution that can be adapted to any individual patient and heart valve at a fraction of the cost of direct 3D-printing using soft materials. METHODS: Leaflets of a pediatric mitral valve, a tricuspid valve in a patient with hypoplastic left heart syndrome, and a complete atrioventricular canal valve were segmented from ultrasound images. A custom software was developed to automatically generate molds for each valve based on the segmentation. These molds were 3D-printed and used to make silicone valve models. The models were designed with cylindrical rims of different sizes surrounding the leaflets, to show the outline of the valve and add rigidity. Pediatric cardiac surgeons practiced suturing on the models and evaluated them for use as surgical planning and training tools. RESULTS: Five out of six surgeons reported that the valve models would be very useful as training tools for cardiac surgery. In this first iteration of valve models, leaflets were felt to be unrealistically thick or stiff compared to real pediatric leaflets. A thin tube rim was preferred for valve flexibility. CONCLUSION: The valve models were well received and considered to be valuable and accessible tools for heart valve surgery training. Further improvements will be made based on surgeons' feedback.

  9. Experimental results on performance improvement of doped carbon-base materials

    International Nuclear Information System (INIS)

    Xu Zengyu

    2002-01-01

    Carbon-base materials is one of candidate plasma facing materials and have been widely used in current tokamak facilities in the world. But some defect properties are presented on high yield of chemical sputtering , high yield of radiation enhancement sublimate (RES), cracking after heat flux and so on. It can be improved by doped some little other elements into the carbon-base materials, such as boron, silicon, titanium and so on. Experimental results indicate that it is feasible and successful to improve thermo-physics and chemical properties of carbon-base materials by multi-element doped. Doped 12 % silicon can strained RES and chemical sputtering yield do not changed. It is the same level of chemical sputtering yield for B 4 C from 3 % to 10 % , but their resistance thermal shock properties ability increases with B 4 C increases

  10. Development of Silicon-substrate Based Fabry-Perot Etalons for far-IR Astrophysics

    Science.gov (United States)

    Stacey, Gordon

    We propose to design, construct and test silicon-substrate-based (SSB) mirrors necessary for high performance Fabry-Perot interferometers (FPIs) to be used in the 25-40 um mid-IR band. These mirrors will be fabricated from silicon wafers that are anti-reflection coated (ARC) by micromachining an artificial dielectric meta-material on one side, and depositing optimized gold-metalized patterns on the other. Two mirrors with the metalized surfaces facing one-another form the Fabry-Perot cavity, also known as the FPI etalon. The exterior surfaces of the silicon mirrors are anti-reflection coated for both good transmission in the science band, and to prevent unwanted parasitic FPI cavities from forming between the four surfaces (one anti-reflection coated, one metalized for each mirror) of the FPI etalon. The mirrors will be tested within a Miniature Cryogenic Scanning Fabry-Perot (MCSF) that we have designed through support of a previous NASA grant (NNX09AB95G). This design is based on our long experience in constructing and using scanning FPI in the mid-IR to submm range, and fits within test-beds we have on hand that are suitable for both warm and cold tests. The key technologies are the ARC and tuned mirrors that are enabled by silicon nano-machining techniques. The creation of these SSB mirrors promises greatly improved performance over previous versions of mid-IR to submm-band FPIs that are based on mirrors made from free-standing metal mesh stretched over support rings. Performance is improved both structurally and in terms of sensitivity, and is measured as the product of the cavity finesse times transmission. Our electromagnetic modeling suggests that SSB mirrors will improve this product by a factor of 2 over the best free standing mesh etalons available. This translates into a factor of sqrt(2) improvement in sensitivity per etalon, or a full factor of 2 when used in a tandem (dual etalon) FPI spectrometer. The SSB improvements are due to both the stiff (~ 0

  11. High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

    Science.gov (United States)

    Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard-Granger, G.; Dufourcq, J.

    2015-06-01

    Some of the energy used in transportation and industry is lost as heat, often at high-temperatures, during conversion processes. Thermoelectricity enables direct conversion of heat into electricity, and is an alternative to the waste-heat-recovery technology currently used, for example turbines and other types of thermodynamic cycling. The performance of thermoelectric (TE) materials and modules has improved continuously in recent decades. In the high-temperature range ( T hot side > 500°C), silicon-germanium (SiGe) alloys are among the best TE materials reported in the literature. These materials are based on non-toxic elements. The Thermoelectrics Laboratory at CEA (Commissariat à l'Energie Atomique et aux Energies Alternatives) has synthesized n and p-type SiGe pellets, manufactured TE modules, and integrated these into thermoelectric generators (TEG) which were tested on a dedicated bench with hot air as the source of heat. SiGe TE samples of diameter 60 mm were created by spark-plasma sintering. For n-type SiGe doped with phosphorus the peak thermoelectric figure of merit reached ZT = 1.0 at 700°C whereas for p-type SiGe doped with boron the peak was ZT = 0.75 at 700°C. Thus, state-of-the-art conversion efficiency was obtained while also achieving higher production throughput capacity than for competing processes. A standard deviation high reproducibility. A silver-paste-based brazing technique was used to assemble the TE elements into modules. This assembly technique afforded low and repeatable electrical contact resistance (high temperatures (up to 600°C), and thirty 20 mm × 20 mm TE modules were produced and tested. The results revealed the performance was reproducible, with power output reaching 1.9 ± 0.2 W for a 370 degree temperature difference. When the temperature difference was increased to 500°C, electrical power output increased to >3.6 W. An air-water heat exchanger was developed and 30 TE modules were clamped and connected electrically

  12. Hyperpolarized Porous Silicon Nanoparticles: Potential Theragnostic Material for ²⁹Si Magnetic Resonance Imaging.

    Science.gov (United States)

    Seo, Hyeonglim; Choi, Ikjang; Whiting, Nicholas; Hu, Jingzhe; Luu, Quy Son; Pudakalakatti, Shivanand; McCowan, Caitlin; Kim, Yaewon; Zacharias, Niki; Lee, Seunghyun; Bhattacharya, Pratip; Lee, Youngbok

    2018-05-20

    Porous silicon nanoparticles have recently garnered attention as potentially-promising biomedical platforms for drug delivery and medical diagnostics. Here, we demonstrate porous silicon nanoparticles as contrast agents for ²⁹Si magnetic resonance imaging. Size-controlled porous silicon nanoparticles were synthesized by magnesiothermic reduction of silica nanoparticles and were surface activated for further functionalization. Particles were hyperpolarized via dynamic nuclear polarization to enhance their ²⁹Si MR signals; the particles demonstrated long ²⁹Si spin-lattice relaxation (T₁) times (~ 25 mins), which suggests potential applicability for medical imaging. Furthermore, ²⁹Si hyperpolarization levels were sufficient to allow ²⁹Si MRI in phantoms. These results underscore the potential of porous silicon nanoparticles that, when combined with hyperpolarized magnetic resonance imaging, can be a powerful theragnostic deep tissue imaging platform to interrogate various biomolecular processes in vivo. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Knowledge-based metals & materials

    OpenAIRE

    Sasson, Amir

    2011-01-01

    This study presents the Norwegian metal and material industry (defined as all metal and material related firms located in Norway, regardless of ownership) and evaluates the industry according to the underlying dimensions of a global knowledge hub - cluster attractiveness, education attractiveness, talent attractiveness, R&D and innovation attractiveness, ownership attractiveness, environmental attractiveness and cluster dynamics.

  14. Low cost silicon-on-ceramic photovoltaic solar cells

    Science.gov (United States)

    Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

    1980-01-01

    A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

  15. Determination of silicon in plant materials by laser-induced breakdown spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Souza, Paulino Florêncio de [Centro de Energia Nuclear na Agricultura, Universidade de São Paulo, Av. Centenário 303, 13416-000, Piracicaba, SP (Brazil); Centro de Tecnologia Canavieira, PO Box 162, 13400-970 Piracicaba, SP (Brazil); Santos, Dário [Departamento de Ciências Exatas e da Terra, Universidade Federal de São Paulo, Rua Prof. Artur Riedel, 275, 09972-270, Diadema, SP (Brazil); Gustinelli Arantes de Carvalho, Gabriel; Nunes, Lidiane Cristina [Centro de Energia Nuclear na Agricultura, Universidade de São Paulo, Av. Centenário 303, 13416-000, Piracicaba, SP (Brazil); Silva Gomes, Marcos da [Centro de Energia Nuclear na Agricultura, Universidade de São Paulo, Av. Centenário 303, 13416-000, Piracicaba, SP (Brazil); Departamento de Química, Universidade Federal de São Carlos, 13565-905 São Carlos, SP (Brazil); Guerra, Marcelo Braga Bueno [Centro de Energia Nuclear na Agricultura, Universidade de São Paulo, Av. Centenário 303, 13416-000, Piracicaba, SP (Brazil); Krug, Francisco José, E-mail: fjkrug@cena.usp.br [Centro de Energia Nuclear na Agricultura, Universidade de São Paulo, Av. Centenário 303, 13416-000, Piracicaba, SP (Brazil)

    2013-05-01

    In spite of the importance of Si for improving the productivity of many important crops, such as those from the Poaceae family (e.g. sugar cane, maize, wheat, rice), its quantitative determination in plants is seldom carried out and restricted to few laboratories in the world. There is a survey of methods in the literature, but most of them are either laborious or difficult to validate in view of the low availability of reference materials with a certified Si mass fraction. The aim of this study is to propose a method for the direct determination of Si in pellets of plant materials by laser-induced breakdown spectroscopy (LIBS). The experimental setup was designed by using a Q-switched Nd:YAG laser at 1064 nm (5 ns, 10 Hz) and the emission signals were collected by lenses into an optical fiber coupled to an Echelle spectrometer equipped with an intensified charge-coupled device. Experiments were carried out with leaves from 24 sugar cane varieties, with mass fractions varying from ca. 2 to 10 g kg{sup −1} Si. Pellets prepared from cryogenically ground leaves were used as test samples for both method development and validation of the calibration model. Best results were obtained when the test samples were interrogated with laser fluence of 50 J cm{sup −2} (750 μm spot size) and measurements carried out at Si I 212.412 nm emission line. The results obtained by LIBS were compared with those from inductively coupled plasma optical emission spectrometry after oven-induced alkaline digestion, and no significant differences were observed after applying the Student's t-test at 95% confidence level. The trueness of the proposed LIBS method was also confirmed from the analysis of CRM GBW 07603 (Bush branches and leaves). - Highlights: • This is the first application of LIBS for determination of Si in plant materials. • Data indicate that the method is appropriate for Si diagnosis in routine analysis. • Silicon can be simultaneously determined with macro- and

  16. Determination of silicon in plant materials by laser-induced breakdown spectroscopy

    International Nuclear Information System (INIS)

    Souza, Paulino Florêncio de; Santos, Dário; Gustinelli Arantes de Carvalho, Gabriel; Nunes, Lidiane Cristina; Silva Gomes, Marcos da; Guerra, Marcelo Braga Bueno; Krug, Francisco José

    2013-01-01

    In spite of the importance of Si for improving the productivity of many important crops, such as those from the Poaceae family (e.g. sugar cane, maize, wheat, rice), its quantitative determination in plants is seldom carried out and restricted to few laboratories in the world. There is a survey of methods in the literature, but most of them are either laborious or difficult to validate in view of the low availability of reference materials with a certified Si mass fraction. The aim of this study is to propose a method for the direct determination of Si in pellets of plant materials by laser-induced breakdown spectroscopy (LIBS). The experimental setup was designed by using a Q-switched Nd:YAG laser at 1064 nm (5 ns, 10 Hz) and the emission signals were collected by lenses into an optical fiber coupled to an Echelle spectrometer equipped with an intensified charge-coupled device. Experiments were carried out with leaves from 24 sugar cane varieties, with mass fractions varying from ca. 2 to 10 g kg −1 Si. Pellets prepared from cryogenically ground leaves were used as test samples for both method development and validation of the calibration model. Best results were obtained when the test samples were interrogated with laser fluence of 50 J cm −2 (750 μm spot size) and measurements carried out at Si I 212.412 nm emission line. The results obtained by LIBS were compared with those from inductively coupled plasma optical emission spectrometry after oven-induced alkaline digestion, and no significant differences were observed after applying the Student's t-test at 95% confidence level. The trueness of the proposed LIBS method was also confirmed from the analysis of CRM GBW 07603 (Bush branches and leaves). - Highlights: • This is the first application of LIBS for determination of Si in plant materials. • Data indicate that the method is appropriate for Si diagnosis in routine analysis. • Silicon can be simultaneously determined with macro- and micronutrients

  17. Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

    Science.gov (United States)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

    2014-03-01

    The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

  18. Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science Investigation

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croll, A.

    2014-01-01

    A series of Ge Si crystal growth experiments are planned to be conducted in the Low 1-x x Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  19. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    Energy Technology Data Exchange (ETDEWEB)

    Wananuruksawong, R; Jinawath, S; Wasanapiarnpong, T [Research Unit of Advanced Ceramic, Department of Materials Science, Faculty of Science, Chulalongkorn University, Bangkok (Thailand); Padipatvuthikul, P, E-mail: raayaa_chula@hotmail.com [Faculty of Dentistry, Srinakharinwirot University, Bangkok (Thailand)

    2011-10-29

    Silicon nitride (Si{sub 3}N{sub 4}) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si{sub 3}N{sub 4} ceramic as a dental core material. The white Si{sub 3}N{sub 4} was prepared by pressureless sintering at relative low sintering temperature of 1650 deg. C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si{sub 3}N{sub 4} ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si{sub 3}N{sub 4} specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder (<150 micrometer, Pyrex) with 5 wt% of zirconia powder (3 wt% Y{sub 2}O{sub 3} - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si{sub 3}N{sub 4} specimens, the firing was performed in electric tube furnace between 1000-1200 deg. C. The veneered specimens fired at 1100 deg. C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98x10{sup -6} deg. C{sup -1}, rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  20. Silicon anode materials with ultra-low resistivity from the inside out for lithium ion batteries

    Science.gov (United States)

    Xu, Guojun; Jin, Chenxin; Liu, Liekai; Lan, Yu; Yue, Zhihao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Zhou, Lang

    2017-12-01

    Broken silicon (Si) wafers with electrical resistivity of 1 and 0.001 Ω cm were respectively ball-milled to Si particles with median diameters of less than 1 μm. Both these two types of Si particles were deposited with silver (Ag) nanoparticles by self-selective electroless deposition method. 1-Ω cm-Si particles, 0.001-Ω cm-Si particles, Ag-deposited 1-Ω cm-Si particles and Ag-deposited 0.001-Ω cm-Si particles were, respectively, mixed with graphite particles in weight ratio of 1:9 to form four types of Si-C anode materials and then they were assembled into coin cells. The experimental results indicate that the Ag-deposited 0.001-Ω cm-Si sample shows the higher capacity, better rate and cycle performance than other three samples, due to the high conductivity of Ag-deposited 0.001-Ω cm-Si sample from the inside out. At the current density of 750 mA g-1, the discharge capacity gap of Ag-deposited 0.001-Ω cm-Si sample and 0.001-Ω cm-Si sample is as high as 141.7 mA h g-1, which is almost equal to the discharge capacity of the latter. Besides, the discharge capacity retention ratio of Ag-deposited 0.001-Ω cm-Si sample after 50 cycles is 70%, which is 23.5% higher than that of 0.001-Ω cm-Si sample.

  1. Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants.

    Science.gov (United States)

    Gryshkov, Oleksandr; Klyui, Nickolai I; Temchenko, Volodymyr P; Kyselov, Vitalii S; Chatterjee, Anamika; Belyaev, Alexander E; Lauterboeck, Lothar; Iarmolenko, Dmytro; Glasmacher, Birgit

    2016-11-01

    Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO2) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. Copyright © 2016 Elsevier B.V. All rights reserved.

  2. Laser shock ignition of porous silicon based nano-energetic films

    International Nuclear Information System (INIS)

    Plummer, A.; Gascooke, J.; Shapter, J.; Kuznetsov, V. A.; Voelcker, N. H.

    2014-01-01

    Nanoporous silicon films on a silicon wafer were loaded with sodium perchlorate and initiated using illumination with infrared laser pulses to cause laser thermal ignition and laser-generated shock waves. Using Photon Doppler Velocimetry, it was determined that these waves are weak stress waves with a threshold intensity of 131 MPa in the silicon substrate. Shock generation was achieved through confinement of a plasma, generated upon irradiation of an absorptive paint layer held against the substrate side of the wafer. These stress waves were below the threshold required for sample fracturing. Exploiting either the laser thermal or laser-generated shock mechanisms of ignition may permit use of pSi energetic materials in applications otherwise precluded due to their environmental sensitivity

  3. Laser shock ignition of porous silicon based nano-energetic films

    Energy Technology Data Exchange (ETDEWEB)

    Plummer, A.; Gascooke, J.; Shapter, J. [School of Chemical and Physical Sciences, Flinders University, 5042, Bedford Park (Australia); Centre of Expertise in Energetic Materials (CEEM), Bedford Park (Australia); Kuznetsov, V. A., E-mail: nico.voelcker@unisa.edu.au, E-mail: Valerian.Kuznetsov@dsto.defence.gov.au [School of Chemical and Physical Sciences, Flinders University, 5042, Bedford Park (Australia); Centre of Expertise in Energetic Materials (CEEM), Bedford Park (Australia); Weapons and Combat Systems Division, Defence Science and Technology Organisation, Edinburgh 5111 (Australia); Voelcker, N. H., E-mail: nico.voelcker@unisa.edu.au, E-mail: Valerian.Kuznetsov@dsto.defence.gov.au [Mawson Institute, University of South Australia, 5095, Mawson Lakes (Australia)

    2014-08-07

    Nanoporous silicon films on a silicon wafer were loaded with sodium perchlorate and initiated using illumination with infrared laser pulses to cause laser thermal ignition and laser-generated shock waves. Using Photon Doppler Velocimetry, it was determined that these waves are weak stress waves with a threshold intensity of 131 MPa in the silicon substrate. Shock generation was achieved through confinement of a plasma, generated upon irradiation of an absorptive paint layer held against the substrate side of the wafer. These stress waves were below the threshold required for sample fracturing. Exploiting either the laser thermal or laser-generated shock mechanisms of ignition may permit use of pSi energetic materials in applications otherwise precluded due to their environmental sensitivity.

  4. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  5. Tests of a silicon wafer based neutron collimator

    International Nuclear Information System (INIS)

    Cussen, L.D.; Vale, C.J.; Anderson, I.S.; Hoeghoj, P.

    2001-01-01

    A Soller slit neutron collimator has been prepared by stacking 160 μm thick single crystal silicon wafers coated on one surface with 4 μm of gadolinium metal. The collimator has an angular width of 20 min full width at half maximum and an effective length of 2.75 cm. The collimator has beam dimensions of 1 cm wide by 5.3 cm high. Tests at neutron wavelengths 7.5A and 1.8A showed a peak transmission of 88% within 2% of the optimum theoretical possibility. The background suppression in the wings is comparable with that of conventional neutron collimators

  6. Tests of a silicon wafer based neutron collimator

    CERN Document Server

    Cussen, L D; Anderson, I S; Hoeghoj, P

    2001-01-01

    A Soller slit neutron collimator has been prepared by stacking 160 mu m thick single crystal silicon wafers coated on one surface with 4 mu m of gadolinium metal. The collimator has an angular width of 20 min full width at half maximum and an effective length of 2.75 cm. The collimator has beam dimensions of 1 cm wide by 5.3 cm high. Tests at neutron wavelengths 7.5A and 1.8A showed a peak transmission of 88% within 2% of the optimum theoretical possibility. The background suppression in the wings is comparable with that of conventional neutron collimators.

  7. Pyrolysis behaviour of silicone-based ceramifying composites

    International Nuclear Information System (INIS)

    Mansouri, J.; Burford, R.P.; Cheng, Y.B.

    2006-01-01

    In this work the effect of firing temperature on microstructure and chemical composition of silicone-mica composites was studied. Field emission electron microscopy (FESEM) and electron probe microanalysis (EPMA) were used to explore the changes in microstructure and local microchemical composition when samples were heated at 600 and 1000 deg. C. EPMA showed the presence of skin formation and preferential migration of silica to the surface. These effects were more pronounced at higher temperatures. XRD analysis of mica and composites at different temperatures also showed the formation of new phases as a result of reaction between the decomposition products of mica and silica

  8. A facile fluorescent sensor based on silicon nanowires for dithionite

    Science.gov (United States)

    Cao, Xingxing; Mu, Lixuan; Chen, Min; She, Guangwei

    2018-05-01

    A facile and novel fluorescent sensor for dithionite has been constructed by simultaneously immobilizing dansyl group (fluorescence molecule) and dabsyl group (quencher and recognizing group) on the silicon nanowires (SiNWs) and SiNW arrays surface. This sensor for dithionite exhibited high selectivity and a good relationship of linearity between fluorescence intensities and dithionite concentrations from 0.1 to 1 mM. This approach is straightforward and does not require complicated synthesis, which can be extended to develop other sensors with similar rationale.

  9. High quality silicon-based substrates for microwave and millimeter wave passive circuits

    Science.gov (United States)

    Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

    2017-09-01

    Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous

  10. Hot corrosion studies on nickel-based alloys containing silicon

    International Nuclear Information System (INIS)

    Kerr, T.W.; Simkovich, G.

    1976-01-01

    Alloys of Ni--Cr, Ni--Si and Ni--Cr--Si were oxidized and ''hot corroded'' in pure oxygen at 1000 0 C. In the oxidation experiments it was found that small amounts of either chromium or silicon in nickel increased the oxidation rates in comparison to pure nickel in accord with Wagner's parabolic oxidation theory. At high concentrations of the alloying elements the oxidation rates decreased due to the formation of oxide phases other than nickel oxide in the scale. Hot corrosion experiments were conducted on both binary and ternary alloys by oxidizing samples coated with 1.0 mg/cm 2 of Na 2 SO 4 in oxygen at 1000 0 C. In general it was found that high chromium and high silicon alloys displayed excellent resistance to the hot corrosion process gaining or losing less than 0.5 mg/cm 2 in 1800 min at temperature. Microprobe and x-ray diffraction studies of the alloy and the scale indicate that amorphous SiO 2 probably formed to aid in retarding both the oxidation and the hot corrosion process

  11. Nanocomposites Based on Polyethylene and Nanocrystalline Silicon Films

    Directory of Open Access Journals (Sweden)

    Olkhov Anatoliy Aleksandrovich

    2014-12-01

    Full Text Available High-strength polyethylene films containing 0.5-1.0 wt. % of nanocrystalline silicon (nc-Si were synthesized. Samples of nc-Si with an average core diameter of 7-10 nm were produced by plasmochemical method and by laser-induced decomposition of monosilane. Spectral studies revealed almost complete (up to ~95 % absorption of UV radiation in 200- 400 nm spectral region by 85 micron thick film if the nc-Si content approaches to 1.0 wt. %. The density function of particle size in the starting powders and polymer films containing immobilized silicon nanocrystallites were obtained using the modeling a complete profile of X-ray diffraction patterns, assuming spherical grains and the lognormal distribution. The results of X-ray analysis shown that the crystallite size distribution function remains almost unchanged and the crystallinity of the original polymer increases to about 10 % with the implantation of the initial nc-Si samples in the polymer matrix.

  12. Fiscal 2000 achievement report. Development of energy use rationalization-oriented silicon manufacturing process (Survey and study of analysis of commercialization of solar-grade silicon material manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko kyodo kenkyu gyomu seika hokokusho. Energy shiyo gorika silicon seizo process kaihatsu (Taiyodenchiyou silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The trend of technology development, problems harbored therein, trend of the market, and the like were investigated for supporting the development of technologies for the mass production and commercialization of solar-grade silicon materials. Concerning the future of production enhancement and cost reduction in the manufacture of polycrystalline silicon solar cells, studies were made from the technological viewpoint. The results are shown below. It is estimated that approximately 4,500 tons of material silicon will be necessary in 2005 and 6,500-10,700 tons in 2010. Since the melting purification method of NEDO (New Energy and Industrial Technology Development Organization) now under development step by step toward commercialization as well as the conventional source will provide the necessary amount of material silicon, it is inferred that the development of solar cells will go on without any restraint originating in the semiconductor industry. With the commercialization of the technologies so far developed and the development/commercialization of the fast-acting high-performance solar cell technology, probabilities are high that the polycrystalline silicon solar cell manufacturing cost in 2010 will be as low as to be on the 100 yen/W (93-118 yen/W) level which is the level now held up as the goal. (NEDO)

  13. Centrifugal forming and mechanical properties of silicone-based elastomers for soft robotic actuators

    Science.gov (United States)

    Kulkarni, Parth

    This thesis describes the centrifugal forming and resulting mechanical properties of silicone-based elastomers for the manufacture of soft robotic actuators. This process is effective at removing bubbles that get entrapped within 3D-printed, enclosed molds. Conventional methods for rapid prototyping of soft robotic actuators to remove entrapped bubbles typically involve degassing under vacuum, with open-faced molds that limit the layout of formed parts to raised 2D geometries. As the functionality and complexity of soft robots increase, there is a need to mold complete 3D structures with controlled thicknesses or curvatures on multiples surfaces. In addition, characterization of the mechanical properties of common elastomers for these soft robots has lagged the development of new designs. As such, relationships between resulting material properties and processing parameters are virtually non-existent. One of the goals of this thesis is to provide guidelines and physical insights to relate the design, processing conditions, and resulting properties of soft robotic components to each other. Centrifugal forming with accelerations on the order of 100 g's is capable of forming bubble-free, true 3D components for soft robotic actuators, and resulting demonstrations in this work include an aquatic locomotor, soft gripper, and an actuator that straightens when pressurized. Finally, this work shows that the measured mechanical properties of 3D geometries fabricated within enclosed molds through centrifugal forming possess comparable mechanical properties to vacuumed materials formed from open-faced molds with raised 2D features.

  14. Ternary and quaternary nanocomposites based on polystyrene, SBS, organically modified clay and silicone-polyether

    International Nuclear Information System (INIS)

    Kaneko, Manuela L.Q.A.; Lourenco, Emerson; Paiva, Raphael E.F.; Felisberti, Maria I.; Yoshida, Inez V.P.

    2009-01-01

    This work aims the study of toughened nanocomposites based on polystyrene (PS), poly(styrene-b-butadiene-b-styrene) (SBS), organically modified clay (C20A) and silicone-polyether, PDMS-POE. The intercalation of the copolymer PDMS-POE into the clay galleries increased the interlamellar distance, improving the exfoliation of the clay during the extrusion process of the materials. C20A/PDMS-POE nanocomposite, MC20A, was prepared by mechanical mixture using 1:1 wt% ratio. MC20A was incorporated into PS and PS/SBS blends using an extruder. The materials were characterized by X-ray diffraction and stress-strain mechanical tests. MC20A/PS/SBS, prepared by extrusion, showed an increase in the interlamellar distance, suggesting the intercalation of PS or SBS into the clay galleries. The PDMSPOE acted as a 'plasticizer' for PS and PS/SBS blend. However, this effect was not reverted by the clay addition. On the contrary, the 'plasticizer' effect was intensified by the clay maybe due to the slip characteristics of PDMS-POE associated with the lamella orientation. (author)

  15. Porous silicon-cyclodextrin based polymer composites for drug delivery applications.

    Science.gov (United States)

    Hernandez-Montelongo, J; Naveas, N; Degoutin, S; Tabary, N; Chai, F; Spampinato, V; Ceccone, G; Rossi, F; Torres-Costa, V; Manso-Silvan, M; Martel, B

    2014-09-22

    One of the main applications of porous silicon (PSi) in biomedicine is drug release, either as a single material or as a part of a composite. PSi composites are attractive candidates for drug delivery systems because they can display new chemical and physical characteristics, which are not exhibited by the individual constituents alone. Since cyclodextrin-based polymers have been proven efficient materials for drug delivery, in this work β-cyclodextrin-citric acid in-situ polymerization was used to functionalize two kinds of PSi (nanoporous and macroporous). The synthesized composites were characterized by microscopy techniques (SEM and AFM), physicochemical methods (ATR-FTIR, XPS, water contact angle, TGA and TBO titration) and a preliminary biological assay was performed. Both systems were tested as drug delivery platforms with two different model drugs, namely, ciprofloxacin (an antibiotic) and prednisolone (an anti-inflammatory), in two different media: pure water and PBS solution. Results show that both kinds of PSi/β-cyclodextrin-citric acid polymer composites, nano- and macro-, provide enhanced release control for drug delivery applications than non-functionalized PSi samples. Copyright © 2014 Elsevier Ltd. All rights reserved.

  16. The impact of silicon feedstock on the PV module cost

    NARCIS (Netherlands)

    del Coso, G.; del Cañizo, C.; Sinke, W.C.

    2010-01-01

    The impact of the use of new (solar grade) silicon feedstock materials on the manufacturing cost of wafer-based crystalline silicon photovoltaic modules is analyzed considering effects of material cost, efficiency of utilisation, and quality. Calculations based on data provided by European industry

  17. Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

    Science.gov (United States)

    1981-01-01

    Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

  18. Wear Characteristics of Hybrid Composites Based on Za27 Alloy Reinforced With Silicon Carbide and Graphite Particles

    Directory of Open Access Journals (Sweden)

    S. Mitrović

    2014-06-01

    Full Text Available The paper presents the wear characteristics of a hybrid composite based on zinc-aluminium ZA27 alloy, reinforced with silicon-carbide and graphite particles. The tested sample contains 5 vol.% of SiC and 3 vol.% Gr particles. Compocasting technique has been used to prepare the samples. The experiments were performed on a “block-on-disc” tribometer under conditions of dry sliding. The wear volumes of the alloy and the composite were determined by varying the normal loads and sliding speeds. The paper contains the procedure for preparation of sample composites and microstructure of the composite material and the base ZA27 alloy. The wear surface of the composite material was examined using the scanning electronic microscope (SEM and energy dispersive spectrometry (EDS. Conclusions were obtained based on the observed impact of the sliding speed, normal load and sliding distance on tribological behaviour of the observed composite.

  19. 360° tunable microwave phase shifter based on silicon-on-insulator dual-microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Xue, Weiqi; Liu, Liu

    2010-01-01

    We demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator dual-microring resonators. A quasi-linear phase shift of 360° with ~2dB radio frequency power variation at a microwave frequency of 40GHz is obtained......We demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator dual-microring resonators. A quasi-linear phase shift of 360° with ~2dB radio frequency power variation at a microwave frequency of 40GHz is obtained...

  20. Process for producing silicon nitride based articles of high fracture toughness and strength

    Science.gov (United States)

    Huckabee, M.; Buljan, S.T.; Neil, J.T.

    1991-09-10

    A process for producing a silicon nitride-based article of improved fracture toughness and strength is disclosed. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12 m[sup 2]/g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

  1. Silicon-based visible and near-infrared optoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Mazur, Eric; Carey, James Edward

    2017-10-17

    In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

  2. Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2012-01-01

    A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.

  3. Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science ISS Investigation

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croll, A.

    2014-01-01

    A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processinginduced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.

  4. Synthesis and In Vitro Activity Assessment of Novel Silicon Oxycarbide-Based Bioactive Glasses

    Directory of Open Access Journals (Sweden)

    Isabel Gonzalo-Juan

    2016-11-01

    Full Text Available Novel bioactive glasses based on a Ca- and Mg-modified silicon oxycarbide (SiCaMgOC were prepared from a polymeric single-source precursor, and their in vitro activity towards hydroxyapatite mineralization was investigated upon incubating the samples in simulated body fluid (SBF at 37 °C. The as-prepared materials exhibit an outstanding resistance against devitrification processes and maintain their amorphous nature even after exposure to 1300 °C. The X-ray diffraction (XRD analysis of the SiCaMgOC samples after the SBF test showed characteristic reflections of apatite after only three days, indicating a promising bioactivity. The release kinetics of the Ca2+ and Mg2+ and the adsorption of H+ after immersion of SiCaMgOC in simulated body fluid for different soaking times were analyzed via optical emission spectroscopy. The results show that the mechanism of formation of apatite on the surface of the SiCaMgOC powders is similar to that observed for standard (silicate bioactive glasses. A preliminary cytotoxicity investigation of the SiOC-based bioactive glasses was performed in the presence of mouse embryonic fibroblasts (MEF as well as human embryonic kidney cells (HEK-293. Due to their excellent high-temperature crystallization resistance in addition to bioactivity, the Ca- and Mg-modified SiOC glasses presented here might have high potential in applications related to bone repair and regeneration.

  5. Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants

    Energy Technology Data Exchange (ETDEWEB)

    Gryshkov, Oleksandr, E-mail: gryshkov@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany); Klyui, Nickolai I., E-mail: klyuini@ukr.net [College of Physics, Jilin University, 130012 Changchun (China); V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Temchenko, Volodymyr P., E-mail: tvp@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Kyselov, Vitalii S., E-mail: kyselov@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Chatterjee, Anamika, E-mail: chatterjee@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany); Belyaev, Alexander E., E-mail: belyaev@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Lauterboeck, Lothar, E-mail: lauterboeck@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany); Iarmolenko, Dmytro, E-mail: iarmolenko.dmytro@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Glasmacher, Birgit, E-mail: glasmacher@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany)

    2016-11-01

    Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO{sub 2}) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO{sub 2} using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO{sub 2} to the initial HA powder resulted in significant decomposition of the final HA/ZrO{sub 2} coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO{sub 2} coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. - Highlights: • Synthesis and characterization of porous biomorphic SiC ceramics derived from wood • Successful deposition of bioactive calcium phosphate coatings using gas detonation deposition • Porosity and pore size of Si

  6. Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants

    International Nuclear Information System (INIS)

    Gryshkov, Oleksandr; Klyui, Nickolai I.; Temchenko, Volodymyr P.; Kyselov, Vitalii S.; Chatterjee, Anamika; Belyaev, Alexander E.; Lauterboeck, Lothar; Iarmolenko, Dmytro; Glasmacher, Birgit

    2016-01-01

    Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO 2 ) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO 2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO 2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO 2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO 2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. - Highlights: • Synthesis and characterization of porous biomorphic SiC ceramics derived from wood • Successful deposition of bioactive calcium phosphate coatings using gas detonation deposition • Porosity and pore size of SiC ceramics depend on wood

  7. Achievement report for fiscal 1999 on the development of silicon manufacturing process rationalizing energy utilization. Research and study on analysis to put silicon raw material manufacturing technology for solar cells into practical use; 1999 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    In order to support the development and practical application of a mass production technology for manufacturing silicon raw materials for solar cells, research and study were performed on trends of developing the related technologies, and movements in markets and industries. This paper reports the achievements thereof in fiscal 1999. Markets for solar cells are growing favorably, and the worldwide solar cell production in 1999 was 200 MWp, of which 80% or more is occupied by crystalline silicon solar cell. While development of the manufacturing technology for SOG-Si mass-production is in the stage of operation research of pilot plants, it has been verified that problems of impurity contamination was resolved, and high-purity silicon can be manufactured. In developing the silicon scrap utilization technology and a technology to integrate silicon refinement with casting, a conversion efficiency of 14% or higher was acquired in prototype sample substrates. It has been verified that a variety of raw materials can be dealt with by using the above technology, which has a possibility of cost reduction. In developing a substrate manufacturing technology, a great progress has been made in enhancing the productivity and reducing the cost by developing the continuous casting in the electromagnetic casting and the automation technology. (NEDO)

  8. Design and fabrication of ultrathin silicon-nitride membranes for use in UV-visible airgap-based MEMS optical filters

    International Nuclear Information System (INIS)

    Ghaderi, Mohammadamir; Wolffenbuttel, Reinoud F.

    2016-01-01

    MEMS-based airgap optical filters are composed of quarter-wave thick high-index dielectric membranes that are separated by airgaps. The main challenge in the fabrication of these filters is the intertwined optical and mechanical requirements. The thickness of the layers decreases with design wavelength, which makes the optical performance in the UV more susceptible to fabrication tolerances, such as thickness and composition of the deposited layers, while the ability to sustain a certain level of residual stress by the structural strength becomes more critical. Silicon-nitride has a comparatively high Young's modulus and good optical properties, which makes it a suitable candidate as the membrane material. However, both the mechanical and optical properties in a silicon-nitride film strongly depend on the specifics of the deposition process. A design trade-off is required between the mechanical strength and the index of refraction, by tuning the silicon content in the silicon-nitride film. However, also the benefit of a high index of refraction in a silicon-rich film should be weighed against the increased UV optical absorption. This work presents the design, fabrication, and preliminary characterization of one and three quarter-wave thick silicon-nitride membranes with a one-quarter airgap and designed to give a spectral reflectance at 400 nm. The PECVD silicon-nitride layers were initially characterized, and the data was used for the optical and mechanical design of the airgap filters. A CMOS compatible process based on polysilicon sacrificial layers was used for the fabrication of the membranes. Optical characterization results are presented. (paper)

  9. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    Directory of Open Access Journals (Sweden)

    Jiawei eWANG

    2015-04-01

    Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  10. Development of starch-based materials

    NARCIS (Netherlands)

    Habeych Narvaez, E.A.

    2009-01-01

    Starch-based materials show potential as fully degradable plastics. However, the current
    applicability of these materials is limited due to their poor moisture tolerance and
    mechanical properties. Starch is therefore frequently blended with other polymers to make
    the material more

  11. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  12. Annealing effects on magnetic properties of silicone-coated iron-based soft magnetic composites

    International Nuclear Information System (INIS)

    Wu Shen; Sun Aizhi; Zhai Fuqiang; Wang Jin; Zhang Qian; Xu Wenhuan; Logan, Philip; Volinsky, Alex A.

    2012-01-01

    This paper focuses on novel iron-based soft magnetic composites synthesis utilizing high thermal stability silicone resin to coat iron powder. The effect of an annealing treatment on the magnetic properties of synthesized magnets was investigated. The coated silicone insulating layer was characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy. Silicone uniformly coated the powder surface, resulting in a reduction of the imaginary part of the permeability, thereby increasing the electrical resistivity and the operating frequency of the synthesized magnets. The annealing treatment increased the initial permeability, the maximum permeability, and the magnetic induction, and decreased the coercivity. Annealing at 580 °C increased the maximum permeability by 72.5%. The result of annealing at 580 °C shows that the ferromagnetic resonance frequency increased from 2 kHz for conventional epoxy resin coated samples to 80 kHz for the silicone resin insulated composites. - Highlights: ► Silicone uniformly coated the powder, increased the operating frequency of SMCs. ► The annealing treatment increased the DC properties of SMCs. ► Annealing at 580 °C increased the maximum permeability by 72.5%. ► Compared with epoxy coated, the SMCs had higher resistivity annealing at 580 °C.

  13. Low-temperature radiation damage in silicon - 1: Annealing studies on N-type material

    International Nuclear Information System (INIS)

    Awadelkarim, O.O.

    1986-07-01

    The presence of electrically active defects in electron-irradiated P-doped n-type silicon was monitored using capacitance and loss factor measurements. Irradiations were performed at temperatures c - 0.14) eV and (E c - 0.24) eV in the gap are ascribed to the carbon interstitial and the divacancy, respectively. (author)

  14. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    NARCIS (Netherlands)

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of

  15. Silicon doped InP as an alternative plasmonic material for mid-infrared

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

    2016-01-01

    Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

  16. Melanin-Based Functional Materials

    Directory of Open Access Journals (Sweden)

    Marco d’Ischia

    2018-01-01

    Full Text Available Melanin biopolymers are currently the focus of growing interest for a broad range of applications at the cutting edge of biomedical research and technology. This Special Issue presents a collection of papers dealing with melanin-type materials, e.g., polydopamine, for classic and innovative applications, offering a stimulating perspective of current trends in the field. Besides basic scientists, the Special Issue is directed to researchers from industries and companies that are willing to invest in melanin research for innovative and inspiring solutions.

  17. Investigation of graphene based miniaturized terahertz antenna for novel substrate materials

    Directory of Open Access Journals (Sweden)

    Rajni Bala

    2016-03-01

    Full Text Available The selection of appropriate substrate material acts as a performance regulator for miniaturized graphene patch antenna. The substrate material not only controls the transport properties of graphene but also influences the resonant properties of the graphene patch antenna. The edge fed microstrip line graphene based rectangular patch antenna is designed here for operating in the frequency range 2.67–2.92 THz for wireless applications. The performance is investigated for silicon nitride, aluminum oxide, boron nitride, silica and quartz substrate materials on the basis of return loss, voltage standing wave ratio (VSWR, absorption cross section, bandwidth and radiation efficiency. The comparison of results shows that silicon nitride exhibits overall excellent performance by the virtue of having higher bandwidth and radiation efficiency as compared to other chosen substrate materials.

  18. A room temperature light source based on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Lo Faro, M.J. [CNR-IPCF, Istituto per i Processi Chimico-Fisici, V. le F. Stagno D' Alcontres 37, 98158 Messina (Italy); MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania (Italy); D' Andrea, C. [MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Messina, E.; Fazio, B. [CNR-IPCF, Istituto per i Processi Chimico-Fisici, V. le F. Stagno D' Alcontres 37, 98158 Messina (Italy); Musumeci, P. [Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania (Italy); Franzò, G. [MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Gucciardi, P.G.; Vasi, C. [CNR-IPCF, Istituto per i Processi Chimico-Fisici, V. le F. Stagno D' Alcontres 37, 98158 Messina (Italy); Priolo, F. [MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania (Italy); Scuola Superiore di Catania, Via Valdisavoia 9, 95123 Catania (Italy); Iacona, F. [MATIS CNR-IMM, Istituto per la Microelettronica e Microsistemi, Via Santa Sofia 64, 95123 Catania (Italy); Irrera, A., E-mail: irrera@me.cnr.it [CNR-IPCF, Istituto per i Processi Chimico-Fisici, V. le F. Stagno D' Alcontres 37, 98158 Messina (Italy)

    2016-08-31

    We synthesized ultrathin Si nanowires (NWs) by metal assisted chemical wet etching, using a very thin discontinuous Au layer as precursor for the process. A bright room temperature emission in the visible range due to electron–hole recombination in quantum confined Si NWs is reported. A single walled carbon nanotube (CNT) suspension was prepared and dispersed in Si NW samples. The hybrid Si NW/CNT system exhibits a double emission at room temperature, both in the visible (due to Si NWs) and the IR (due to CNTs) range, thus demonstrating the realization of a low-cost material with promising perspectives for applications in Si-based photonics. - Highlights: • Synthesis of ultrathin Si nanowires (NWs) by metal-assisted chemical etching • Synthesis of NW/carbon nanotube (CNT) hybrid systems • Structural characterization of Si NWs and Si NW/CNT • Room temperature photoluminescence (PL) properties of Si NWs and of Si NW/CNT • Tuning of the PL properties of the Si NW/CNT hybrid system.

  19. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  20. Synthesis and Characterization of Silicon Nanoparticles Inserted into Graphene Sheets as High Performance Anode Material for Lithium Ion Batteries

    Directory of Open Access Journals (Sweden)

    Yong Chen

    2014-01-01

    Full Text Available Silicon nanoparticles have been successfully inserted into graphene sheets via a novel method combining freeze-drying and thermal reduction. The structure, electrochemical performance, and cycling stability of this anode material were characterized by SEM, X-ray diffraction (XRD, charge/discharge cycling, and cyclic voltammetry (CV. CV showed that the Si/graphene nanocomposite exhibits remarkably enhanced cycling performance and rate performance compared with bare Si nanoparticles for lithium ion batteries. XRD and SEM showed that silicon nanoparticles inserted into graphene sheets were homogeneous and had better layered structure than the bare silicon nanoparticles. Graphene sheets improved high rate discharge capacity and long cycle-life performance. The initial capacity of the Si nanoparticles/graphene keeps above 850 mAhg−1 after 100 cycles at a rate of 100 mAg−1. The excellent cycle performances are caused by the good structure of the composites, which ensured uniform electronic conducting sheet and intensified the cohesion force of binder and collector, respectively.

  1. Preparation and characterization of flake graphite/silicon/carbon spherical composite as anode materials for lithium-ion batteries

    International Nuclear Information System (INIS)

    Lai Jun; Guo Huajun; Wang Zhixing; Li Xinhai; Zhang Xiaoping; Wu Feixiang; Yue Peng

    2012-01-01

    Highlights: ► Flake graphite/silicon/carbon composite is synthesized via spray drying. ► Flake graphite of ∼0.5 μm and glucose are used to prepare the composite. ► The as-prepared composite shows spherical and porous appearance. ► The composite shows nearly the same cycleability as commercial graphite in 20 cycles. ► The composite shows a reversible capacity of 552 mAh/g at the 20th cycle. - Abstract: Using nano-Si, glucose and flake graphite of ∼0.5 μm as raw materials, flake graphite/silicon/carbon composite is successfully synthesized via spray drying and subsequent pyrolysis. The samples are characterized by XRD, SEM, TEM and electrochemical measurements. The composite is composed of flake graphite, nano-Si and amorphous glucose-pyrolyzed carbon and presents good spherical appearance. Some micron pores arising from the decomposition of glucose exist on the surface of the composite particles. The composite has a high reversible capacity of 602.7 mAh/g with an initial coulombic efficiency of 69.71%, and shows nearly the same cycleability as the commercial graphite in 20 cycles. Both the glucose-pyrolyzed carbon and the micron pores play important roles in improving the cycleability of the composite. The flake graphite/silicon/carbon composite electrode is a potential alternative to graphite for high energy-density lithium ion batteries.

  2. Silicon Nano fabrication by Atomic Force Microscopy-Based Mechanical Processing

    International Nuclear Information System (INIS)

    Miyake, Sh.; Wang, M.; Kim, J.

    2014-01-01

    This paper reviews silicon nano fabrication processes using atomic force microscopy (AFM). In particular, it summarizes recent results obtained in our research group regarding AFM-based silicon nano fabrication through mechanochemical local oxidation by diamond tip sliding, as well as mechanical, electrical, and electromechanical processing using an electrically conductive diamond tip. Microscopic three-dimensional manufacturing mainly relies on etching, deposition, and lithography. Therefore, a special emphasis was placed on nano mechanical processes, mechanochemical reaction by potassium hydroxide solution etching, and mechanical and electrical approaches. Several important surface characterization techniques consisting of scanning tunneling microscopy and related techniques, such as scanning probe microscopy and AFM, were also discussed.

  3. High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

    DEFF Research Database (Denmark)

    Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

    2017-01-01

    is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...

  4. Study of the properties of silicon-based semiconductor converters for betavoltaic cells

    International Nuclear Information System (INIS)

    Polikarpov, M. A.; Yakimov, E. B.

    2015-01-01

    Silicon p-i-n diodes are studied in a scanning electron microscope under conditions simulating the β-radiation from a radioactive Ni 63 source with an activity of 10 mCi/cm 2 . The attainable parameters of β-voltaic cells with a source of this kind and a silicon-based converter of β-particle energy to electric current are estimated. It is shown that the power of elements of this kind can reach values of ∼10 nW/cm 2 even for a cell with an area of one centimeter, which is rather close to the calculated value

  5. [A micro-silicon multi-slit spectrophotometer based on MEMS technology].

    Science.gov (United States)

    Hao, Peng; Wu, Yi-Hui; Zhang, Ping; Liu, Yong-Shun; Zhang, Ke; Li, Hai-Wen

    2009-06-01

    A new mini-spectrophotometer was developed by adopting micro-silicon slit and pixel segmentation technology, and this spectrophotometer used photoelectron diode array as the detector by the back-dividing-light way. At first, the effect of the spectral bandwidth on the tested absorbance linear correlation was analyzed. A theory for the design of spectrophotometer's slit was brought forward after discussing the relationships between spectrophotometer spectrum band width and pre-and post-slits width. Then, the integrative micro-silicon-slit, which features small volume, high precision, and thin thickness, was manufactured based on the MEMS technology. Finally, a test was carried on linear absorbance solution by this spectrophotometer. The final result showed that the correlation coefficients were larger than 0.999, which means that the new mini-spectrophotometer with micro-silicon slit pixel segmentation has an obvious linear correlation.

  6. Growth of carbon nanotubes by Fe-catalyzed chemical vapor processes on silicon-based substrates

    Science.gov (United States)

    Angelucci, Renato; Rizzoli, Rita; Vinciguerra, Vincenzo; Fortuna Bevilacqua, Maria; Guerri, Sergio; Corticelli, Franco; Passini, Mara

    2007-03-01

    In this paper, a site-selective catalytic chemical vapor deposition synthesis of carbon nanotubes on silicon-based substrates has been developed in order to get horizontally oriented nanotubes for field effect transistors and other electronic devices. Properly micro-fabricated silicon oxide and polysilicon structures have been used as substrates. Iron nanoparticles have been obtained both from a thin Fe film evaporated by e-gun and from iron nitrate solutions accurately dispersed on the substrates. Single-walled nanotubes with diameters as small as 1 nm, bridging polysilicon and silicon dioxide “pillars”, have been grown. The morphology and structure of CNTs have been characterized by SEM, AFM and Raman spectroscopy.

  7. A Microsystem Based on Porous Silicon-Glass Anodic Bonding for Gas and Liquid Optical Sensing

    Directory of Open Access Journals (Sweden)

    Ivo Rendina

    2006-06-01

    Full Text Available We have recently presented an integrated silicon-glass opto-chemical sensor forlab-on-chip applications, based on porous silicon and anodic bonding technologies. In thiswork, we have optically characterized the sensor response on exposure to vapors of severalorganic compounds by means of reflectivity measurements. The interaction between theporous silicon, which acts as transducer layer, and the organic vapors fluxed into the glasssealed microchamber, is preserved by the fabrication process, resulting in optical pathincrease, due to the capillary condensation of the vapors into the pores. Using theBruggemann theory, we have calculated the filled pores volume for each substance. Thesensor dynamic has been described by time-resolved measurements: due to the analysischamber miniaturization, the response time is only of 2 s. All these results have beencompared with data acquired on the same PSi structure before the anodic bonding process.

  8. An Enhanced Soft Vibrotactile Actuator Based on ePVC Gel with Silicon Dioxide Nanoparticles.

    Science.gov (United States)

    Park, Won-Hyeong; Shin, Eun-Jae; Yun, Sungryul; Kim, Sang-Youn

    2018-01-01

    In this paper, we propose a soft vibrotactile actuator made by mixing silicon dioxide nanoparticles and plasticized PVC gel. The effect of the silicon dioxide nanoparticles in the plasticized PVC gel for the haptic performance is investigated in terms of electric, dielectric, and mechanical properties. Furthermore, eight soft vibrotactile actuators are prepared as a function of the content. Experiments are conducted to examine the haptic performance of the prepared eight soft vibrotactile actuators and to find the best weight ratio of the plasticized PVC gel to the nanoparticles. The experiments should show that the plasticized PVC gel with silicon dioxide nanoparticles improves the haptic performance of the plasticized PVC gel-based vibrotactile actuator, and the proposed vibrotactile actuator can create a variety of haptic sensations in a wide frequency range.

  9. Materiality in a practice-based approach

    DEFF Research Database (Denmark)

    Svabo, Connie

    2009-01-01

    The paper provides an overview of the vocabulary for materiality which is used by practice-based approaches to organizational knowing. Common terms for materiality are 'artifact' and 'object'. The interaction between social and material realities is grasped as several processes: object......-oriented activity, symbolization, embodiment, performance, alignment and mediation. Material artifacts both stabilize and destabilize organizational action. They may ensure coordination, communication, and control, but they may also create disturbance and conflict....

  10. Comparative evaluation of tensile bond strength of silicone-based denture liners after thermocycling and surface treatment

    Directory of Open Access Journals (Sweden)

    Harsimran Kaur

    2015-01-01

    Full Text Available Purpose: To examine, evaluate, and compare the tensile bond strength of two silicone-based liners; one autopolymerizing and one heat cured, when treated with different chemical etchants to improve their adhesion with denture base resin. Materials and Methods: Hundred and sixty test specimens of heat-cured polymethyl methacrylate (PMMA were fabricated; out of which 80 specimens were tested for tensile bond strength after bonding it to autopolymerizing resilient liner (Ufigel P and rest 80 to heat-cured resilient liner (Molloplast B. Each main group was further divided into four subgroups of 20 specimens each, one to act as a control and three were subjected to surface treatment with different chemical etchants namely dichloromethane, MMA monomer, and chloroform. The two silicone-based denture liners were processed between 2 PMMA specimens (10 mm × 10 mm × 40 mm in the space provided by a spacer of 3 mm, thermocycled (5-55°C for 500 cycles, and then their tensile strength measurements were done in the universal testing machine. Results: One-way ANOVA technique showed a highly significant difference in the mean tensile bond strength values for all the groups. The Student′s t-test computed values of statistics for the compared groups were greater than the critical values both at 5% and at 1% levels. Conclusion: Surface treatment of denture base resin with chemical etchants prior to the application of silicone-based liner (Ufigel P and Molloplast-B increased the tensile bond strength. The increase was the highest with specimens subjected to 180 s of MMA surface treatment and the lowest with control group specimens.

  11. Gas phase photocatalytic water splitting in silicon based µ-reactors

    DEFF Research Database (Denmark)

    Dionigi, Fabio; Vesborg, Peter Christian Kjærgaard

    is discussed in the beginning of this thesis followed by an introduction to the basics of photocatalysis. The experimental setup used in this study and the silicon based μ-reactor technology is described afterwards. Almost the entire work presented in the thesis has been done loading the catalysts in these μ...

  12. Widely tunable microwave phase shifter based on silicon-on-insulator dual-microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi

    2010-01-01

    We propose and demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator microring resonators. The phase-shifting range and the RF-power variation are analyzed. A maximum phase-shifting range of 0~600° is achieved by utilizing a dual-microring resonator...

  13. Interferometer immunosensor based on porous silicon for determining alpha-fetoprotein

    Science.gov (United States)

    Lv, Xiaoyi; Jiang, Jing; Lv, Guodong; Mo, Jiaqing; Jia, Zhenhong

    2016-10-01

    An increased level of alpha-fetoprotein ( AFP) in the blood may be a sign of liver cancer. Porous silicon based optical microcavities structure is prepared as a label-free immunosensor platform for detecting AFP. After the antigen-antibody reaction, it is monitored that the red shift of the reflection spectrum of the immunosensor increases

  14. Quadruple-Junction Thin-Film Silicon-Based Solar Cells

    NARCIS (Netherlands)

    Si, F.T.

    2017-01-01

    The direct utilization of sunlight is a critical energy source in a sustainable future. One of the options is to convert the solar energy into electricity using thin-film silicon-based solar cells (TFSSCs). Solar cells in a triple-junction configuration have exhibited the highest energy conversion

  15. Low-Power Silicon-based Thermal Sensors and Actuators for Chemical Applications

    NARCIS (Netherlands)

    Vereshchagina, E.

    2011-01-01

    In the Hot Silicon project low and ultra-low-power Si-based hot surface devices have been developed, i.e. thermal sensors and actuators, for application in catalytic gas micro sensors, micro- and nano- calorimeters. This work include several scientific and technological aspects: • Design and

  16. Spectrometer based on the silicon semiconductor detectors for a study of the two charged particles correlation

    International Nuclear Information System (INIS)

    Krumsztein, Z.W.; Siemiarczuk, T.; Szawlowski, M.

    1974-01-01

    The spectrometer based on the silicon semiconductor detectors for a study of the correlation between two charged particles is described. The results of the time resolution and particles identification measurements are presented. The tests were performed in the proton beam of the JINR synchrocyclotron. (author)

  17. IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts

    NARCIS (Netherlands)

    Yang, G.; Ingenito, A.; Isabella, O.; Zeman, M.

    2016-01-01

    Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface

  18. Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

    KAUST Repository

    Ghoneim, Mohamed T.; Zidan, Mohammed A.; Al-Nassar, Mohammed Y.; Hanna, Amir; Kosel, Jü rgen; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational

  19. Solution immersed silicon (SIS)-based biosensors: a new approach in biosensing.

    Science.gov (United States)

    Diware, M S; Cho, H M; Chegal, W; Cho, Y J; Jo, J H; O, S W; Paek, S H; Yoon, Y H; Kim, D

    2015-02-07

    A novel, solution immersed silicon (SIS)-based sensor has been developed which employs the non-reflecting condition (NRC) for a p-polarized wave. The SIS sensor's response is almost independent of change in the refractive index (RI) of a buffer solution (BS) which makes it capable of measuring low-concentration and/or low-molecular-weight compounds.

  20. Compact high-efficiency vortex beam emitter based on a silicon photonics micro-ring

    DEFF Research Database (Denmark)

    Li, Shimao; Ding, Yunhong; Guan, Xiaowei

    2018-01-01

    Photonic integrated devices that emit vortex beam carrying orbital angular momentum are becoming key components for multiple applications. Here we propose and demonstrate a high-efficiency vortex beam emitter based on a silicon micro-ring resonator integrated with a metal mirror. Such a compact...

  1. Development and analysis of silicon based detectors for low energy nuclear radiation

    International Nuclear Information System (INIS)

    Johansen, G.A.

    1990-11-01

    The design and assembly of a prototype silicon based detector especially for the detection of auroral X-rays is presented. The theoretical fundamentals are shown and the adoption of the detector for applications in future satellite experiments are described. 136 refs

  2. Enhancing the Efficiency of Silicon-Based Solar Cells by the Piezo-Phototronic Effect.

    Science.gov (United States)

    Zhu, Laipan; Wang, Longfei; Pan, Caofeng; Chen, Libo; Xue, Fei; Chen, Baodong; Yang, Leijing; Su, Li; Wang, Zhong Lin

    2017-02-28

    Although there are numerous approaches for fabricating solar cells, the silicon-based photovoltaics are still the most widely used in industry and around the world. A small increase in the efficiency of silicon-based solar cells has a huge economic impact and practical importance. We fabricate a silicon-based nanoheterostructure (p + -Si/p-Si/n + -Si (and n-Si)/n-ZnO nanowire (NW) array) photovoltaic device and demonstrate the enhanced device performance through significantly enhanced light absorption by NW array and effective charge carrier separation by the piezo-phototronic effect. The strain-induced piezoelectric polarization charges created at n-doped Si-ZnO interfaces can effectively modulate the corresponding band structure and electron gas trapped in the n + -Si/n-ZnO NW nanoheterostructure and thus enhance the transport process of local charge carriers. The efficiency of the solar cell was improved from 8.97% to 9.51% by simply applying a static compress strain. This study indicates that the piezo-phototronic effect can enhance the performance of a large-scale silicon-based solar cell, with great potential for industrial applications.

  3. Silicon based nanogap device for investigating electronic transport through 12 nm long oligomers

    DEFF Research Database (Denmark)

    Strobel, S.; Albert, E.; Csaba, G.

    2009-01-01

    We have fabricated vertical nanogap electrode devices based on Silicon-on-Insulator (SOI) substrates for investigating the electronic transport properties of long, conjugated molecular wires. Our nanogap electrode devices comprise smooth metallic contact pairs situated at the sidewall of an SOI s...

  4. MEMS-based Porous Silicon Preconcentrators Filled with Carbopack-B for Explosives Detection

    OpenAIRE

    Camara , El Hadji Malik; James , Franck; Breuil , Philippe; Pijolat , Christophe; Briand , Danick; De Rooij , Nicolaas F

    2014-01-01

    International audience; In this paper we report the detection of explosive compounds using a miniaturized gas preconcentrator (μGP) made of porous silicon (PS) filled in with Carbopack B as an adsorbent material. The μGP includes also a platinum heater patterned at the backside and fluidic connectors sealed on the glass cover. Our μGP is designed and optimized through fluidic and thermal simulations for meeting the requirements of trace explosives detection. The thermal mass of the device was...

  5. Analysis of the effective thermoelastic properties and stress fields in silicon nitride based on EBSD data

    Czech Academy of Sciences Publication Activity Database

    Othmani, Y.; Böhlke, T.; Lube, T.; Fellmeth, A.; Chlup, Zdeněk; Colonna, F.; Hashibon, A.

    2016-01-01

    Roč. 36, č. 5 (2016), s. 1109-1125 ISSN 0955-2219 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 EU Projects: European Commission(XE) 263476 Institutional support: RVO:68081723 Keywords : Silicon nitride * EBSD data * Hashin-Shtrikman bounds * Finite element analysis Subject RIV: JH - Ceramic s, Fire-Resistant Materials and Glass Impact factor: 3.411, year: 2016

  6. Nitride-based Quantum-Confined Structures for Ultraviolet-Visible Optical Devices on Silicon Substrates

    KAUST Repository

    Janjua, Bilal

    2017-04-01

    III–V nitride quantum-confined structures embedded in nanowires (NWs), also known as quantum-disks-in-nanowires (Qdisks-in-NWs), have recently emerged as a new class of nanoscale materials exhibiting outstanding properties for optoelectronic devices and systems. It is promising for circumventing the technology limitation of existing planar epitaxy devices, which are bounded by the lattice-, crystal-structure-, and thermal- matching conditions. This work presents significant advances in the growth of good quality GaN, InGaN and AlGaN Qdisks-in-NWs based on careful optimization of the growth parameters, coupled with a meticulous layer structure and active region design. The NWs were grown, catalyst-free, using plasma assisted molecular beam epitaxy (PAMBE) on silicon (Si) substrates. A 2-step growth scheme was developed to achieve high areal density, dislocation free and vertically aligned NWs on Ti/Si substrates. Numerical modeling of the NWs structures, using the nextnano3 software, showed reduced polarization fields, and, in the presence of Qdisks, exhibited improved quantum-confinement; thus contributing to high carrier radiative-recombination rates. As a result, based on the growth and device structure optimization, the technologically challenging orange and yellow NWs light emitting devices (LEDs) targeting the ‘green-yellow’ gap were demonstrated on scalable, foundry compatible, and low-cost Ti coated Si substrates. The NWs work was also extended to LEDs emitting in the ultraviolet (UV) range with niche applications in environmental cleaning, UV-curing, medicine, and lighting. In this work, we used a Ti (100 nm) interlayer and Qdisks to achieve good quality AlGaN based UV-A (320 - 400 nm) device. To address the issue of UV-absorbing polymer, used in the planarization process, we developed a pendeo-epitaxy technique, for achieving an ultra-thin coalescence of the top p-GaN contact layer, for a self-planarized Qdisks-in-NWs UV-B (280 – 320 nm) LED grown

  7. Fiscal 1999 research and development of technologies for practical application of photovoltaic power generation systems. Development of thin-film solar cell manufacturing technology (Development of material/substrate manufacturing technology - Development of amorphous silicon-based high-quality material/substrate manufacturing technology); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (zairyo kiban seizo gijutsu kaihatsu - amorphous silicon kei kohinshitsu zairyo kiban no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The project aims to enhance the stability of amorphous solar cells. For elevating TCO (transparent conductive oxide) substrate transmittance to an ultrahigh level and for obtaining amorphous layers less to suffer photodegradation, efforts were made to develop substrate materials stable upon exposure to plasma and low in defect density. In the study of TCO, a high-transmittance glass substrate was employed and TCO was made thinner, and the specimen achieved transmittance of 91.3% or 6.3% over that of the conventional type. In the study of low reflection films, it was found that their transmittance came to be stable and remain so after 150 days after a weatherproof test. In the study for stability enhancement, optimization was carried out for a plasma resisting Ga{sub 2}O{sub 3}-added ZnO film for the manufacture of a substrate material capable of properly behaving in a high-speed a-Si film fabrication process. Low-temperature film fabrication was studied to enable low-cost manufacturing, and it was learned that a 4 times 10{sup -4} ohm/cm low-resistance film was obtained by sputtering Ga{sub 2}O{sub 3}-added ZnO where magnetism was intensive at room temperature, that films excellent in crystallinity were obtained by the same method even at low temperatures, and so forth. (NEDO)

  8. Material synthesis for silicon integrated-circuit applications using ion implantation

    Science.gov (United States)

    Lu, Xiang

    As devices scale down into deep sub-microns, the investment cost and complexity to develop more sophisticated device technologies have increased substantially. There are some alternative potential technologies, such as silicon-on-insulator (SOI) and SiGe alloys, that can help sustain this staggering IC technology growth at a lower cost. Surface SiGe and SiGeC alloys with germanium peak composition up to 16 atomic percent are formed using high-dose ion implantation and subsequent solid phase epitaxial growth. RBS channeling spectra and cross-sectional TEM studies show that high quality SiGe and SiGeC crystals with 8 atomic percent germanium concentration are formed at the silicon surface. Extended defects are formed in SiGe and SiGeC with 16 atomic percent germanium concentration. X-ray diffraction experiments confirm that carbon reduces the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RBS channeling spectra and XTEM observations. Separation by plasma implantation of oxygen (SPIMOX) is an economical method for SOI wafer fabrication. This process employs plasma immersion ion implantation (PIII) for the implantation of oxygen ions. The implantation rate for Pm is considerably higher than that of conventional implantation. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. Secondary ion mass spectrometry (SIMS) analysis and cross-sectional transmission electron microscopy (XTEM) micrographs of the SPIMOX sample show continuous buried oxide under single crystal overlayer with sharp silicon/oxide interfaces. The operational phase space of implantation condition, oxygen dose and annealing requirement has been identified. Physical mechanisms of hydrogen induced silicon surface layer cleavage have been investigated using a combination of microscopy and hydrogen profiling techniques. The evolution of the silicon cleavage phenomenon is recorded by a series

  9. Enzyme biosensor systems based on porous silicon photoluminescence for detection of glucose, urea and heavy metals.

    Science.gov (United States)

    Syshchyk, Olga; Skryshevsky, Valeriy A; Soldatkin, Oleksandr O; Soldatkin, Alexey P

    2015-04-15

    A phenomenon of changes in photoluminescence of porous silicon at variations in medium pH is proposed to be used as a basis for the biosensor system development. The method of conversion of a biochemical signal into an optical one is applied for direct determination of glucose and urea as well as for inhibitory analysis of heavy metal ions. Changes in the quantum yield of porous silicon photoluminescence occur at varying pH of the tested solution due to the enzyme-substrate reaction. When creating the biosensor systems, the enzymes urease and glucose oxidase (GOD) were used as a bioselective material; their optimal concentrations were experimentally determined. It was shown that the photoluminescence intensity of porous silicon increased by 1.7 times when increasing glucose concentration in the GOD-containing reaction medium from 0 to 3.0mM, and decreased by 1.45 times at the same increase in the urea concentration in the urease-containing reaction medium. The calibration curves of dependence of the biosensor system responses on the substrate concentrations are presented. It is shown that the presence of heavy metal ions (Cu(2+), Pb(2+), and Cd(2+)) in the tested solution causes an inhibition of the enzymatic reactions catalyzed by glucose oxidase and urease, which results in a restoration of the photoluminescence quantum yield of porous silicon. It is proposed to use this effect for the inhibitory analysis of heavy metal ions. Copyright © 2014 Elsevier B.V. All rights reserved.

  10. Combustion performance of porous silicon-based energetic composites

    Energy Technology Data Exchange (ETDEWEB)

    Mason, Benjamin Aaron [Los Alamos National Laboratory; Son, Steve F [Los Alamos National Laboratory; Asay, Blaine W [Los Alamos National Laboratory; Cho, Kevin Y [PURDUE UNIV

    2009-01-01

    The combustion performance of oxidizer filled porous silicon(PSi) was studied. PSi samples with diameters of 2.54 cm were fabricated by electrochemical etching. The % porosity of the samples ranged from 55 to 82%. The samples were cut into 3-5 mm strips and filled with the oxidizers NaClO{sub 4} x 1H{sub 2}O, Ca(ClO{sub 4}){sub 2} x 4H{sub 2}O, S and perfluoropolyether (PFPE). The filled PSi was then burned by igniting the sample with a hot NiChrome{trademark} wire. The burns were recorded using high speed photography from which bring rates were calculated. That burning rates showed a strong dependency on quality of the oxidizer loading. The % porosity did not appear to have a direct affect on the burning rates for those studied. PSi loaded with NaClO{sub 4} x 1H{sub 2}O produced burning rates that ranged from 216-349 cm/s. PSi loaded with Ca(ClO{sub 4}){sub x}x 4 H{sub 2}O had burning rates of 154-285 cm/s. An S filled PSi sample burned a rate of 16 to 290 cm/s, and perfluoropolyether loaded PSi burned at a rate of 1.4 cm/s.

  11. Development and Evaluation of Die Materials for Use in the Growth of Silicon Ribbons by the Inverted Ribbon Growth Process. Task 2: LSSA Project

    Science.gov (United States)

    Duffy, M. T.; Berkman, S.; Moss, H. I.; Cullen, G. W.

    1978-01-01

    Several ribbon growth experiments were performed from V-shaped dies coated with CVD Si3N4. The most significant result was the ability to perform five consecutive growth runs from the same die without mechanical degradation of the die through temperature cycling. The die was made from vitreous carbon coated with CVD Si3N4. Silicon oxynitride, Si2N2O, was examined with respect to thermal stability in contact with molten silicon. The results of X-ray analysis indicate that this material is converted to both alpha - and beta-Si3N4 in the presence of molten silicon. Experiments on the stability of CVD SiOxNy shoe that this material can be maintained in contact with molten silicon (sessile drop test) for greater than 30 h at 1450 C without total decompositon. These layers are converted mainly to beta-Si3N4.

  12. Preparation and characterisation of mixed silicon oxycarbide materials; Preparacion y caracterizacion de materiales de oxicarburo de silicio mixtos

    Energy Technology Data Exchange (ETDEWEB)

    Tellez, L.; Tamayo, A.; Mazo, M. A.; Rubio, F.; Rubio, J.

    2010-07-01

    In this work different mixed Silicon oxicarbide materials have been prepared. Si, Si-Ti, Si-Zr and Si-Al oxicarbide materials have been obtained from pyrolisis at 1000 degree centigrade and 1300 degree centigrade of the respective preceramic materials. After pyrolisis X, D and T units of the oxycarbide structure have been observed in such materials. They show the presence of Si-C and Si-O bonds in a given material. The characterization has been carried out by means of FT-IR, Raman NMR {sup 2}9Si, NMR {sup 1}3C and XRD. The formation of Si-Ti, Si-Zr and Si-Al bonds has been estimated in accordance with the decrease of the Si-O-Si wave number observed in the FT-IR spectra. Si and Si-Ti oxycarbide materials do not lead to crystallisation after pyrolisis at highest temperatures, however for Si-Zr and Si-Al oxycarbide materials different crystalline phases have been observed. All pyrolised materials present free and carbidic carbon. After pyrolisis at 1300 degree centigrade the free carbon reacts with Si-O bonds to form SiC{sub 4} groups which must be assigned to nucleus of the {beta}-SiC crystals. (Author)

  13. LDEF materials special investigation group's data bases

    Science.gov (United States)

    Strickland, John W.; Funk, Joan G.; Davis, John M.

    1993-01-01

    The Long Duration Exposure Facility (LDEF) was composed of and contained a wide array of materials, representing the largest collection of materials flown for space exposure and returned for ground-based analyses to date. The results and implications of the data from these materials are the foundation on which future space missions will be built. The LDEF Materials Special Investigation Group (MSIG) has been tasked with establishing and developing data bases to document these materials and their performance to assure not only that the data are archived for future generations but also that the data are available to the space user community in an easily accessed, user-friendly form. The format and content of the data bases developed or being developed to accomplish this task are discussed. The hardware and software requirements for each of the three data bases are discussed along with current availability of the data bases.

  14. Chemical stability of the fiber coating/matrix interface in silicon-based ceramic matrix composites

    International Nuclear Information System (INIS)

    Lee, K.N.; Jacobson, N.S.

    1995-01-01

    Carbon and boron nitride are used as fiber coatings in silicon-based composites. In order to assess the long-term stability of these materials, reactions of carbon/Si 3 N 4 and BN/SiC were studied at high temperatures with Knudsen effusion, coupon tests, and by microstructural examination. in the carbon/Si 3 N 4 system, carbon reacted with Si 3 N 4 to form gaseous N 2 and SiC. The formation of SiC limited further reaction by physically separating the carbon and Si 3 N 4 . Consequently, the development of high p(N 2 ) at the interface, predicted from thermochemical calculations, did not occur, thus limiting the potential deleterious effects of the reaction on the composite. Strong indications of a reaction between BN and SiC were shown by TEM and SIMS analysis of the BN/SiC interface. In long-term exposures, this reaction can lead to a depletion of a BN coating and/or an unfavorable change of the interfacial properties, limiting the beneficial effects of the coating

  15. Camera-Based Lock-in and Heterodyne Carrierographic Photoluminescence Imaging of Crystalline Silicon Wafers

    Science.gov (United States)

    Sun, Q. M.; Melnikov, A.; Mandelis, A.

    2015-06-01

    Carrierographic (spectrally gated photoluminescence) imaging of a crystalline silicon wafer using an InGaAs camera and two spread super-bandgap illumination laser beams is introduced in both low-frequency lock-in and high-frequency heterodyne modes. Lock-in carrierographic images of the wafer up to 400 Hz modulation frequency are presented. To overcome the frame rate and exposure time limitations of the camera, a heterodyne method is employed for high-frequency carrierographic imaging which results in high-resolution near-subsurface information. The feasibility of the method is guaranteed by the typical superlinearity behavior of photoluminescence, which allows one to construct a slow enough beat frequency component from nonlinear mixing of two high frequencies. Intensity-scan measurements were carried out with a conventional single-element InGaAs detector photocarrier radiometry system, and the nonlinearity exponent of the wafer was found to be around 1.7. Heterodyne images of the wafer up to 4 kHz have been obtained and qualitatively analyzed. With the help of the complementary lock-in and heterodyne modes, camera-based carrierographic imaging in a wide frequency range has been realized for fundamental research and industrial applications toward in-line nondestructive testing of semiconductor materials and devices.

  16. Additive Manufacturing of Silicon Carbide-Based Ceramic Matrix Composites: Technical Challenges and Opportunities

    Science.gov (United States)

    Singh, Mrityunjay; Halbig, Michael C.; Grady, Joseph E.

    2016-01-01

    Advanced SiC-based ceramic matrix composites offer significant contributions toward reducing fuel burn and emissions by enabling high overall pressure ratio (OPR) of gas turbine engines and reducing or eliminating cooling air in the hot-section components, such as shrouds, combustor liners, vanes, and blades. Additive manufacturing (AM), which allows high value, custom designed parts layer by layer, has been demonstrated for metals and polymer matrix composites. However, there has been limited activity on additive manufacturing of ceramic matrix composites (CMCs). In this presentation, laminated object manufacturing (LOM), binder jet process, and 3-D printing approaches for developing ceramic composite materials are presented. For the laminated object manufacturing (LOM), fiber prepreg laminates were cut into shape with a laser and stacked to form the desired part followed by high temperature heat treatments. For the binder jet, processing optimization was pursued through silicon carbide powder blending, infiltration with and without SiC nano powder loading, and integration of fibers into the powder bed. Scanning electron microscopy was conducted along with XRD, TGA, and mechanical testing. Various technical challenges and opportunities for additive manufacturing of ceramics and CMCs will be presented.

  17. Chemical Stability of the Fiber Coating/Matrix Interface in Silicon-Based Ceramic Matrix Composites

    Science.gov (United States)

    Lee, Kang N.; Jacobson, Nathan S.

    1995-01-01

    Carbon and boron nitride are used as fiber coatings in silicon-based composites. In order to assess the long-term stability of these materials, reactions of carbon/Si3N4 and BN/SiC were studied at high temperatures with Knudsen effusion, coupon tests, and microstructural examination. In the carbon/Si3N4 system, carbon reacted with Si3N4 to form gaseous N2 and SiC. The formation of SiC limited further reaction by physically separating the carbon and Si3N4. Consequently, the development of high p(N2) at the interface, predicted from thermochemical calculations, did not occur, thus limiting the potential deleterious effects of the reaction on the composite. Strong indications of a reaction between BN and SiC were shown by TEM and SIMS analysis of the BN/SiC interface. In long-term exposures, this reaction can lead to a depletion of a BN coating and/or an unfavorable change of the interfacial properties, limiting the beneficial effects of the coating.

  18. Dielectrophoretic trapping of DNA-coated gold nanoparticles on silicon based vertical nanogap devices.

    Science.gov (United States)

    Strobel, Sebastian; Sperling, Ralph A; Fenk, Bernhard; Parak, Wolfgang J; Tornow, Marc

    2011-06-07

    We report on the successful dielectrophoretic trapping and electrical characterization of DNA-coated gold nanoparticles on vertical nanogap devices (VNDs). The nanogap devices with an electrode distance of 13 nm were fabricated from Silicon-on-Insulator (SOI) material using a combination of anisotropic reactive ion etching (RIE), selective wet chemical etching and metal thin-film deposition. Au nanoparticles (diameter 40 nm) coated with a monolayer of dithiolated 8 base pairs double stranded DNA were dielectrophoretically trapped into the nanogap from electrolyte buffer solution at MHz frequencies as verified by scanning and transmission electron microscopy (SEM/TEM) analysis. First electrical transport measurements through the formed DNA-Au-DNA junctions partially revealed an approximately linear current-voltage characteristic with resistance in the range of 2-4 GΩ when measured in solution. Our findings point to the importance of strong covalent bonding to the electrodes in order to observe DNA conductance, both in solution and in the dry state. We propose our setup for novel applications in biosensing, addressing the direct interaction of biomolecular species with DNA in aqueous electrolyte media.

  19. SENTIRAD-An innovative personal radiation detector based on a scintillation detector and a silicon photomultiplier

    International Nuclear Information System (INIS)

    Osovizky, A.; Ginzburg, D.; Manor, A.; Seif, R.; Ghelman, M.; Cohen-Zada, I.; Ellenbogen, M.; Bronfenmakher, V.; Pushkarsky, V.; Gonen, E.; Mazor, T.; Cohen, Y.

    2011-01-01

    The alarming personal radiation detector (PRD) is a device intended for Homeland Security (HLS) applications. This portable device is designed to be worn or carried by security personnel to detect photon-emitting radioactive materials for the purpose of crime prevention. PRD is required to meet the scope of specifications defined by various HLS standards for radiation detection. It is mandatory that the device be sensitive and simultaneously small, pocket-sized, of robust mechanical design and carriable on the user's body. To serve these specialized purposes and requirements, we developed the SENTIRAD, a new radiation detector designed to meet the performance criteria established for counterterrorist applications. SENTIRAD is the first commercially available PRD based on a CsI(Tl) scintillation crystal that is optically coupled with a silicon photomultiplier (SiPM) serving as a light sensor. The rapidly developing technology of SiPM, a multipixel semiconductor photodiode that operates in Geiger mode, has been thoroughly investigated in previous studies. This paper presents the design considerations, constraints and radiological performance relating to the SENTIRAD radiation sensor.

  20. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2008-09-01

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'