L’intelligence artificielle et la tragique persistance de l’imaginaire de la Silicon Valley

OpenAIRE

Delvenne, Pierre; Macq, Hadrien

2017-01-01

Dans cette carte blanche publiée, nous essayons de prendre du recul sur la fascination exercée par l'intelligence artificielle, et sur le pourquoi il nous semble important de développer une pensée critique quand beaucoup d'acteurs rêvent d'une Silicon Valley en Belgique ou en Wallonie.

Labour Markets and Employment Practices in the Age of Flexibility: A Case Study of Silicon Valley.

Science.gov (United States)

Carnoy, Martin; And Others

1997-01-01

Flexible employment has accounted for more than half of Silicon Valley's total employment growth in the past 10 years. Flexible employment has become a permanent strategy that may create insecurity for low-skilled workers; it also leads to a high turnover rate among highly skilled workers. (JOW)

Clustering in ICT: From Route 128 to Silicon Valley, from DEC to Google, from Hardware to Content

NARCIS (Netherlands)

W. Hulsink (Wim); D. Manuel; H. Bouwman (Harry)

2007-01-01

textabstractOne of the pioneers in academic entrepreneurship and high-tech clustering is MIT and the Route 128/Boston region. Silicon Valley centered around Stanford University was originally a fast follower and only later emerged as a scientific and industrial hotspot. Several technology and

Do VCs use inside rounds to dilute founders? Some evidence from Silicon Valley

OpenAIRE

Fried, Jesse M.; Broughman, Brian J.

2012-01-01

In the bank-borrower setting, a firm’s existing lender may exploit its positional advantage to extract rents from the firm in subsequent financings. Analogously, a startup’s existing venture capital investors (VCs) may dilute the founder through a follow-on financing from these same VCs (an “inside” round) at an artificially low valuation. Using a hand-collected dataset of Silicon Valley startup firms, we find little evidence that VCs use inside rounds to dilute founders. Instead, our finding...

Terahertz optical-Hall effect for multiple valley band materials: n-type silicon

International Nuclear Information System (INIS)

Kuehne, P.; Hofmann, T.; Herzinger, C.M.; Schubert, M.

2011-01-01

The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.

Capital social y desarrollo económico. Los casos de Silicon Valley y Villa El Salvador

Directory of Open Access Journals (Sweden)

Pablo Galaso Reca

2005-01-01

Full Text Available Este artículo se refiere a las relaciones existentes entre el capital social y el desarrollo económico. Para ello, en primer lugar presenta un marco teórico que muestra la evolución del concepto de capital social, su clasificación, medición y algunas aplicaciones prácticas. Posteriormente, explica teóricamente los efectos del capital social en el desarrollo económico. Finalmente, analiza dos experiencias de desarrollo económico altamente vinculadas con el concepto de capital social: los casos de Silicon Valley y Villa El Salvador.

Valley of the unicorns: consumer genomics, venture capital and digital disruption

OpenAIRE

Hogarth, Stuart James

2017-01-01

Drawing on the sociology of expectations and sociology of conventions, this paper explores issues of worth and value in the bioeconomy, and the promissory character of contemporary capitalism. Arguing that the literature on biocapital has paid insufficient attention to geographical differentiation in capital accumulation strategies, this paper situates the consumer genomics firm 23andme in the entrepreneurial culture of Silicon Valley. The paper suggests that in Silicon Valley the relationshi...

Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, T., E-mail: t.kobayashi@unsw.edu.au; Heijden, J. van der; House, M. G.; Hile, S. J.; Asshoff, P.; Simmons, M. Y.; Rogge, S. [Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney 2052 New South Wales (Australia); Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Vinet, M. [Université Grenoble-Alpes and CEA, LETI, MINATEC, 38000 Grenoble (France)

2016-04-11

We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO{sub 2} interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.

Valley-orbit hybrid states in Si quantum dots

Science.gov (United States)

Gamble, John; Friesen, Mark; Coppersmith, S. N.

2013-03-01

The conduction band for electrons in layered Si nanostructures oriented along (001) has two low-lying valleys. Most theoretical treatments assume that these valleys are decoupled from the long-wavelength physics of electron confinement. In this work, we show that even a minimal amount of disorder (a single atomic step at the quantum well interface) is sufficient to mix valley states and electron orbitals, causing a significant distortion of the long-wavelength electron envelope. For physically realistic electric fields and dot sizes, this valley-orbit coupling impacts all electronic states in Si quantum dots, implying that one must always consider valley-orbit hybrid states, rather than distinct valley and orbital degrees of freedom. We discuss the ramifications of our results on silicon quantum dot qubits. This work was supported in part by ARO (W911NF-08-1-0482) and NSF (DMR-0805045).

Hybrid spin and valley quantum computing with singlet-triplet qubits.

Science.gov (United States)

Rohling, Niklas; Russ, Maximilian; Burkard, Guido

2014-10-24

The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over the valley state opens new possibilities for quantum information processing. Combining qubits encoded in the singlet-triplet subspace of spin and valley states allows for universal QC using a universal two-qubit gate directly provided by the exchange interaction. We show how spin and valley qubits can be separated in order to allow for single-qubit rotations.

Pathways to High-tech Valleys and Research Triangles

NARCIS (Netherlands)

Hulsink, W.; Dons, H.

2008-01-01

Silicon Valley and the industrial districts of Italy, where shared identity, superior skills, regional specialization and trust-based networking among local firms have produced dynamic and flexible ecosystems, are inspiring examples of the successful promotion of thriving technology and business

Operationalizing ecological resilience at a landscape scale: A framework and case study from Silicon Valley

Science.gov (United States)

Beller, E.; Robinson, A.; Grossinger, R.; Grenier, L.; Davenport, A.

2015-12-01

Adaptation to climate change requires redesigning our landscapes and watersheds to maximize ecological resilience at large scales and integrated across urban areas, wildlands, and a diversity of ecosystem types. However, it can be difficult for environmental managers and designers to access, interpret, and apply resilience concepts at meaningful scales and across a range of settings. To address this gap, we produced a Landscape Resilience Framework that synthesizes the latest science on the qualitative mechanisms that drive resilience of ecological functions to climate change and other large-scale stressors. The framework is designed to help translate resilience science into actionable ecosystem conservation and restoration recommendations and adaptation strategies by providing a concise but comprehensive list of considerations that will help integrate resilience concepts into urban design, conservation planning, and natural resource management. The framework is composed of seven principles that represent core attributes which determine the resilience of ecological functions within a landscape. These principles are: setting, process, connectivity, redundancy, diversity/complexity, scale, and people. For each principle we identify several key operationalizable components that help illuminate specific recommendations and actions that are likely to contribute to landscape resilience for locally appropriate species, habitats, and biological processes. We are currently using the framework to develop landscape-scale recommendations for ecological resilience in the heavily urbanized Silicon Valley, California, in collaboration with local agencies, companies, and regional experts. The resilience framework is being applied across the valley, including urban, suburban, and wildland areas and terrestrial and aquatic ecosystems. Ultimately, the framework will underpin the development of strategies that can be implemented to bolster ecological resilience from a site to

Silicon Quantum Dots for Quantum Information Processing

Science.gov (United States)

2013-11-01

S. Lai, C. Tahan, A. Morello and A. S. Dzurak, Electron Spin lifetimes in multi-valley sil- icon quantum dots, S3NANO Winter School Few spin solid...lifetimes in multi-valley sil- icon quantum dots, International Workshop on Silicon Quantum Electronics, Grenoble, France, February 2012 (Poster). C...typically plunger gates), PMMA A5 is spun at 5000 rpm for 30 seconds, resulting in a 280 nm resist thickness. The resists are baked for 90 seconds at 180

Graphene valley pseudospin filter using an extended line defect

Science.gov (United States)

Gunlycke, Daniel; White, Carter

2011-03-01

Although graphene exhibits excellent electron and thermal transport properties, it does not have an intrinsic band gap, required to use graphene as a replacement material for silicon and other semiconductors in conventional electronics. The band structure of graphene with its two cones near the Fermi level, however, offers opportunities to develop non-traditional applications. One such avenue is to exploit the valley degeneracy in graphene to develop valleytronics. A central component in valleytronics is the valley filter, just as the spin filter is central in spintronics. Herein, we present a two-dimensional valley filter based on scattering of electrons and holes off a recently observed extended line defect [Nat. Nanotech.5, 326 (2010)] within graphene. The transmission probability depends strongly on the valley pseudospin and the angle of incidence of the incident quasiparticles. Quasiparticles arriving at the line defect at a high angle of incidence lead to a valley polarization of the transmitted beam that is near 100 percent. This work was supported by ONR, directly and through NRL.

Completely independent electrical control of spin and valley in a silicene field effect transistor

International Nuclear Information System (INIS)

Zhai, Xuechao; Jin, Guojun

2016-01-01

One-atom-thick silicene is a silicon-based hexagonal-lattice material with buckled structure, where an electron fuses multiple degrees of freedom including spin, sublattice pseudospin and valley. We here demonstrate that a valley-selective spin filter (VSSF) that supports single-valley and single-spin transport can be realized in a silicene field effect transistor constructed of an npn junction, where an antiferromagnetic exchange field and a perpendicular electric field are applied in the p -doped region. The nontrivial VSSF property benefits from an electrically controllable state of spin-polarized single-valley Dirac cone. By reversing the electric field direction, the device can operate as a spin-reversed but valley-unreversed filter due to the dependence of band gap on spin and valley. Further, we find that all the possible spin-valley configurations of VSSF can be achieved just by tuning the electric field. Our findings pave the way to the realization of completely independent electrical control of spin and valley in silicene circuits. (paper)

The Legal Road To Replicating Silicon Valley

OpenAIRE

John Armour; Douglas Cumming

2004-01-01

Must policymakers seeking to replicate the success of Silicon Valley’s venture capital market first replicate other US institutions, such as deep and liquid stock markets? Or can legal reforms alone make a significant difference? In this paper, we compare the economic and legal determinants of venture capital investment, fundraising and exits. We introduce a cross-sectional and time series empirical analysis across 15 countries and 13 years of data spanning an entire business cycle. We show t...

Phosphorus {delta}-doped silicon: mixed-atom pseudopotentials and dopant disorder effects

Energy Technology Data Exchange (ETDEWEB)

Carter, Damien J; Marks, Nigel A [Nanochemistry Research Institute, Curtin University, PO Box U1987, Perth WA 6845 (Australia); Warschkow, Oliver; McKenzie, David R, E-mail: d.carter@curtin.edu.au [Centre for Quantum Computer Technology, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia)

2011-02-11

Within a full density functional theory framework we calculate the band structure and doping potential for phosphorus {delta}-doped silicon. We compare two different representations of the dopant plane; pseudo-atoms in which the nuclear charge is fractional between silicon and phosphorus, and explicit arrangements employing distinct silicon and phosphorus atoms. While the pseudo-atom approach offers several computational advantages, the explicit model calculations differ in a number of key points, including the valley splitting, the Fermi level and the width of the doping potential. These findings have implications for parameters used in device modelling.

Subsurface and petroleum geology of the southwestern Santa Clara Valley ("Silicon Valley"), California

Science.gov (United States)

Stanley, Richard G.; Jachens, Robert C.; Lillis, Paul G.; McLaughlin, Robert J.; Kvenvolden, Keith A.; Hostettler, Frances D.; McDougall, Kristin A.; Magoon, Leslie B.

2002-01-01

Gravity anomalies, historical records of exploratory oil wells and oil seeps, new organic-geochemical results, and new stratigraphic and structural data indicate the presence of a concealed, oil-bearing sedimentary basin beneath a highly urbanized part of the Santa Clara Valley, Calif. A conspicuous isostatic-gravity low that extends about 35 km from Palo Alto southeastward to near Los Gatos reflects an asymmetric, northwest-trending sedimentary basin comprising low-density strata, principally of Miocene age, that rest on higher-density rocks of Mesozoic and Paleogene(?) age. Both gravity and well data show that the low-density rocks thin gradually to the northeast over a distance of about 10 km. The thickest (approx 4 km thick) accumulation of low-density material occurs along the basin's steep southwestern margin, which may be controlled by buried, northeast-dipping normal faults that were active during the Miocene. Movement along these hypothetical normal faults may been contemporaneous (approx 17–14 Ma) with sedimentation and local dacitic and basaltic volcanism, possibly in response to crustal extension related to passage of the northwestward-migrating Mendocino triple junction. During the Pliocene and Quaternary, the normal faults and Miocene strata were overridden by Mesozoic rocks, including the Franciscan Complex, along northeastward-vergent reverse and thrust faults of the Berrocal, Shannon, and Monte Vista Fault zones. Movement along these fault zones was accompanied by folding and tilting of strata as young as Quaternary and by uplift of the modern Santa Cruz Mountains; the fault zones remain seismically active. We attribute the Pliocene and Quaternary reverse and thrust faulting, folding, and uplift to compression caused by local San Andreas Fault tectonics and regional transpression along the Pacific-North American Plate boundary. Near the southwestern margin of the Santa Clara Valley, as many as 20 exploratory oil wells were drilled between 1891

Device-Level Models Using Multi-Valley Effective Mass

Science.gov (United States)

Baczewski, Andrew D.; Frees, Adam; Gamble, John King; Gao, Xujiao; Jacobson, N. Tobias; Mitchell, John A.; Montaño, Inès; Muller, Richard P.; Nielsen, Erik

2015-03-01

Continued progress in quantum electronics depends critically on the availability of robust device-level modeling tools that capture a wide range of physics and effective mass theory (EMT) is one means of building such models. Recent developments in multi-valley EMT show quantitative agreement with more detailed atomistic tight-binding calculations of phosphorus donors in silicon (Gamble, et. al., arXiv:1408.3159). Leveraging existing PDE solvers, we are developing a framework in which this multi-valley EMT is coupled to an integrated device-level description of several experimentally active qubit technologies. Device-level simulations of quantum operations will be discussed, as well as the extraction of process matrices at this level of theory. The authors gratefully acknowledge support from the Sandia National Laboratories Truman Fellowship Program, which is funded by the Laboratory Directed Research and Development (LDRD) Program. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Security Administration under contract DE-AC04-94AL85000.

Gorecki: Euntes Ibant et Flebant / Ivan Moody

Index Scriptorium Estoniae

Moody, Ivan

1994-01-01

Uuest heliplaadist "Gorecki: Euntes Ibant et Flebant, Op. 32. Totus tuus, Op. 60. Amen, Op. 35; Pärt, Arvo: Magnificat. Summa; Travener, John: The Annunciation a. o. Oxford Musica Singers / Michael Smedley" Proud Sound CD PROUCD 136

Eesti Energia : investeerimata oleme varsti hädas / Krista Taim, Allar Viivik

Index Scriptorium Estoniae

Taim, Krista

2004-01-01

Eesti Energia nõukogu kinnitas ettevõtte investeeringutekava aastani 2018, 15 aasta jooksul tuleb investeerida 46 miljardit krooni, rahastamisallikatena nähakse välislaenu, riigi abi või hinnatõusu. Kommenteerivad Eiki Nestor ja Marika Tuus

Electronic properties of epitaxial 6H silicon carbide

International Nuclear Information System (INIS)

Wessels, B.W.; Gatos, H.C.

1977-01-01

The electrical conductivity and Hall coefficient were measured in the temperature range from 78 to 900 K for n-type epitaxially grown 6H silicon carbide. A many-valley model of the conduction band was used in the analysis of electron concentration as a function of temperature. From this analysis, the density of states mass to the free electron mass ratio per ellipsoid was calculated to be 0.45. It was estimated that the constant energy surface of the conduction band consists of three ellipsoids. The ionization energy of the shallowest nitrogen donor was found to be 105 meV, when the valley-orbit interaction was taken into account. The electron scattering mechanisms in the epitaxial layers were analyzed and it was shown that the dominant mechanism limiting electron mobility at high temperatures is inter-valley scattering and at low temperatures (200K), impurity and space charge scattering. A value of 360 cm 2 /V sec was calculated for the maximum room temperature Hall mobility expected for electrons in pure 6H SiC. The effect of epitaxial growth temperature on room temperature Hall mobility was also investigated. (author)

Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain

Science.gov (United States)

Mansir, J.; Conti, P.; Zeng, Z.; Pla, J. J.; Bertet, P.; Swift, M. W.; Van de Walle, C. G.; Thewalt, M. L. W.; Sklenard, B.; Niquet, Y. M.; Morton, J. J. L.

2018-04-01

We experimentally study the coupling of group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts that are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains |ɛ |hydrostatic component of strain and achieve semiquantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150 GHz per strain, for Bi donors in Si) offers a method for donor spin tuning—shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order 10-6—as well as opportunities for coupling to mechanical resonators.

Valley-dependent band structure and valley polarization in periodically modulated graphene

Science.gov (United States)

Lu, Wei-Tao

2016-08-01

The valley-dependent energy band and transport property of graphene under a periodic magnetic-strained field are studied, where the time-reversal symmetry is broken and the valley degeneracy is lifted. The considered superlattice is composed of two different barriers, providing more degrees of freedom for engineering the electronic structure. The electrons near the K and K' valleys are dominated by different effective superlattices. It is found that the energy bands for both valleys are symmetric with respect to ky=-(AM+ξ AS) /4 under the symmetric superlattices. More finite-energy Dirac points, more prominent collimation behavior, and new crossing points are found for K' valley. The degenerate miniband near the K valley splits into two subminibands and produces a new band gap under the asymmetric superlattices. The velocity for the K' valley is greatly renormalized compared with the K valley, and so we can achieve a finite velocity for the K valley while the velocity for the K' valley is zero. Especially, the miniband and band gap could be manipulated independently, leading to an increase of the conductance. The characteristics of the band structure are reflected in the transmission spectra. The Dirac points and the crossing points appear as pronounced peaks in transmission. A remarkable valley polarization is obtained which is robust to the disorder and can be controlled by the strain, the period, and the voltage.

77 FR 33237 - Saline Valley Warm Springs Management Plan/Environmental Impact Statement, Death Valley National...

Science.gov (United States)

2012-06-05

... Valley Warm Springs Management Plan/Environmental Impact Statement, Death Valley National Park, Inyo... an Environmental Impact Statement for the Saline Valley Warm Springs Management Plan, Death Valley... analysis process for the Saline Valley Warm Springs Management Plan for Death Valley [[Page 33238...

Energies of the X- and L-valleys in In{sub 0.53}Ga{sub 0.47}As from electronic structure calculations

Energy Technology Data Exchange (ETDEWEB)

Greene-Diniz, Gabriel; Greer, J. C. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland); Fischetti, M. V. [Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road RL10, Richardson, Texas 75080 (United States)

2016-02-07

Several theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of In{sub x}Ga{sub 1−x}As with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L- and X-valley minima are ∼1 eV and ∼1.2 eV, respectively, higher in energy with respect to the conduction-band minimum at the Γ-point.

Guided Interventions for Prostate Cancer Using 3D-Transurethral Ultrasound and MRI Fusion

Science.gov (United States)

2017-06-01

stitching of the images and 3D reconstruction for both the TUUS and MRI images was accomplished using a free DICOM medical imaging software called...References: i. David R. Holmes III, Brian J. Davis, Christopher C. Goulet, Torrence M. Wilson, Lance A. Mynderse, Keith M. Furutani, Jon J. Camp

The behavior of silicon and boron in the surface of corroded nuclear waste glasses: an EFTEM study

International Nuclear Information System (INIS)

Buck, E. C.; Smith, K. L.; Blackford, M. G.

1999-01-01

Using electron energy-loss filtered transmission electron microscopy (EFTEM), we have observed the formation of silicon-rich zones on the corroded surface of a West Valley (WV6) glass. This layer is approximately 100-200 nm thick and is directly underneath a precipitated smectite clay layer. Under conventional (C)TEM illumination, this layer is invisible; indeed, more commonly used analytical techniques, such as x-ray energy dispersive spectroscopy (EDS), have failed to describe fully the localized changes in the boron and silicon contents across this region. Similar silicon-rich and boron-depleted zones were not found on corroded Savannah River Laboratory (SRL) borosilicate glasses, including SRL-EA and SRL-51, although they possessed similar-looking clay layers. This study demonstrates a new tool for examining the corroded surfaces of materials

Valley polarization in bismuth

Science.gov (United States)

Fauque, Benoit

2013-03-01

The electronic structure of certain crystal lattices can contain multiple degenerate valleys for their charge carriers to occupy. The principal challenge in the development of valleytronics is to lift the valley degeneracy of charge carriers in a controlled way. In bulk semi-metallic bismuth, the Fermi surface includes three cigar-shaped electron valleys lying almost perpendicular to the high symmetry axis known as the trigonal axis. The in-plane mass anisotropy of each valley exceeds 200 as a consequence of Dirac dispersion, which drastically reduces the effective mass along two out of the three orientations. According to our recent study of angle-dependent magnetoresistance in bismuth, a flow of Dirac electrons along the trigonal axis is extremely sensitive to the orientation of in-plane magnetic field. Thus, a rotatable magnetic field can be used as a valley valve to tune the contribution of each valley to the total conductivity. As a consequence of a unique combination of high mobility and extreme mass anisotropy in bismuth, the effect is visible even at room temperature in a magnetic field of 1 T. Thus, a modest magnetic field can be used as a valley valve in bismuth. The results of our recent investigation of angle-dependent magnetoresistance in other semi-metals and doped semiconductors suggest that a rotating magnetic field can behave as a valley valve in a multi-valley system with sizeable mass anisotropy.

Greening Turner Valley

International Nuclear Information System (INIS)

Byfield, M.

2010-01-01

This article discussed remedial activities undertaken in the Turner Valley. Remedial action in the valley must satisfy the financial concerns of engineers and investors as well as the environmental concerns of residents and regulators. Natural gas production in the Turner Valley began in 1914. The production practices were harmful and wasteful. Soil and water pollution was not considered a problem until recently. The impacts of cumulative effects and other pollution hazards are now being considered as part of many oil and gas environmental management programs. Companies know it is cheaper and safer to prevent pollutants from being released, and more efficient to clean them up quickly. Oil and gas companies are also committed to remediating historical problems. Several factors have simplified remediation plans in the Turner Valley. Area real estate values are now among the highest in Alberta. While the valley residents are generally friendly to the petroleum industry, strong communication with all stakeholders in the region is needed. 1 fig.

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

Energy Technology Data Exchange (ETDEWEB)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

2017-07-01

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

Valley-filtered edge states and quantum valley Hall effect in gated bilayer graphene.

Science.gov (United States)

Zhang, Xu-Long; Xu, Lei; Zhang, Jun

2017-05-10

Electron edge states in gated bilayer graphene in the quantum valley Hall (QVH) effect regime can carry both charge and valley currents. We show that an interlayer potential splits the zero-energy level and opens a bulk gap, yielding counter-propagating edge modes with different valleys. A rich variety of valley current states can be obtained by tuning the applied boundary potential and lead to the QVH effect, as well as to the unbalanced QVH effect. A method to individually manipulate the edge states by the boundary potentials is proposed.

Riigikogu kavandab autoliisingu hüvitamisele ülempiiri seadmist / Toomas Mattson

Index Scriptorium Estoniae

Mattson, Toomas, 1970-

2003-01-01

Ilmunud ka: Infopress nr. 46 14. nov. lk. 132. Riigikogu juhatus ei poolda kuluhüvitiste arvel autoliisimise lõpetamist, kuid kavatseb pakkuda välja idee seada liisinguhüvitisele ülempiir, mis esialgsetel andmetel oleks 50% kuluhüvitisest. Vt. samas: Lenk ja Tuus võitlevad liisingu allesjäämise eest; Katked protestikirjadest

Valley development on Hawaiian volcanoes

International Nuclear Information System (INIS)

Baker, V.R.; Gulick, V.C.

1987-01-01

Work in progress on Hawaiian drainage evolution indicates an important potential for understanding drainage development on Mars. Similar to Mars, the Hawaiian valleys were initiated by surface runoff, subsequently enlarged by groundwater sapping, and eventually stabilized as aquifers were depleted. Quantitative geomorphic measurements were used to evaluate the following factors in Hawaiian drainage evolution: climate, stream processes, and time. In comparing regions of similar climate, drainage density shows a general increase with the age of the volcani island. With age and climate held constant, sapping dominated valleys, in contrast to runoff-dominated valleys, display the following: lower drainage densities, higher ratios of valley floor width to valley height, and more positive profile concavities. Studies of stream junction angles indicate increasing junction angles with time on the drier leeward sides of the major islands. The quantitative geomorphic studies and earlier field work yielded important insights for Martian geomorphology. The importance of ash mantling in controlling infiltration on Hawaii also seems to apply to Mars. The Hawaiian valley also have implications for the valley networks of Martian heavily cratered terrains

Analysis of Mining-induced Valley Closure Movements

Science.gov (United States)

Zhang, C.; Mitra, R.; Oh, J.; Hebblewhite, B.

2016-05-01

Valley closure movements have been observed for decades in Australia and overseas when underground mining occurred beneath or in close proximity to valleys and other forms of irregular topographies. Valley closure is defined as the inward movements of the valley sides towards the valley centreline. Due to the complexity of the local geology and the interplay between several geological, topographical and mining factors, the underlying mechanisms that actually cause this behaviour are not completely understood. A comprehensive programme of numerical modelling investigations has been carried out to further evaluate and quantify the influence of a number of these mining and geological factors and their inter-relationships. The factors investigated in this paper include longwall positional factors, horizontal stress, panel width, depth of cover and geological structures around the valley. It is found that mining in a series passing beneath the valley dramatically increases valley closure, and mining parallel to valley induces much more closure than other mining orientations. The redistribution of horizontal stress and influence of mining activity have also been recognised as important factors promoting valley closure, and the effect of geological structure around the valley is found to be relatively small. This paper provides further insight into both the valley closure mechanisms and how these mechanisms should be considered in valley closure prediction models.

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Field-induced negative differential spin lifetime in silicon.

Science.gov (United States)

Li, Jing; Qing, Lan; Dery, Hanan; Appelbaum, Ian

2012-04-13

We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.

A landscape scale valley confinement algorithm: Delineating unconfined valley bottoms for geomorphic, aquatic, and riparian applications

Science.gov (United States)

David E. Nagel; John M. Buffington; Sharon L. Parkes; Seth Wenger; Jaime R. Goode

2014-01-01

Valley confinement is an important landscape characteristic linked to aquatic habitat, riparian diversity, and geomorphic processes. This report describes a GIS program called the Valley Confinement Algorithm (VCA), which identifies unconfined valleys in montane landscapes. The algorithm uses nationally available digital elevation models (DEMs) at 10-30 m resolution to...

Small martian valleys: Pristine and degraded morphology

International Nuclear Information System (INIS)

Baker, V.R.; Partridge, J.B.

1986-01-01

The equatorial heavily cratered uplands of Mars are dissected by two classes of small valleys that are intimately associated in compound networks. Pristine valleys with steep valley walls preferentially occupy downstream portions of compound basins. Degraded valleys with eroded walls are laterally more extensive and have higher drainage densities than pristine valleys. Morphometric and crater-counting studies indicate that relatively dense drainage networks were emplaced on Mars during the heavy bombardment about 4.0 b.y. ago. Over a period of approximately 10 8 years, these networks were degraded and subsequently invaded by headwardly extending pristine valleys. The pristine valleys locally reactivated the compound networks, probably through sapping processes dependent upon high water tables. Fluvial activity in the heavily cratered uplands generally ceased approximately 3.8--3.9 b.y. ago, coincident with the rapid decline in cratering rates. The relict compound valleys on Mars are morphometrically distinct from most terrestrial drainage systems. The differences might be caused by a Martian valley formation episode characterized by hyperaridity, by inadequate time for network growth, by very permeable rock types, or by a combination of factors

Siim Kallas näeb tulevikku ilma hiiglaslike büroohooneteta / Siim Kallas ; interv. Neeme Raud

Index Scriptorium Estoniae

Kallas, Siim, 1948-

2008-01-01

Euroopa Komisjoni asepresident külastas USA läänerannikul Silicon Valley tehnoloogiafirmasid ja vastab küsimustele, mis puudutavad seal pakutavaid uusi tehnoloogilisi lahendusi, võrdlust Euroopa infotehnoloogia innovatsioonidega, Eesti esindaja saatmist Silicon Valleysse. Lisa: Silicon Valley

Geologic summary of the Owens Valley drilling project, Owens and Rose Valleys, Inyo County, California

International Nuclear Information System (INIS)

Schaer, D.W.

1981-07-01

The Owens Valley Drilling Project consists of eight drill holes located in southwest Inyo County, California, having an aggregate depth of 19,205 feet (5853 m). Project holes penetrated the Coso Formation of upper Pliocene or early Pleistocene age and the Owens Lake sand and lakebed units of the same age. The project objective was to improve the reliability of uranium-potential-resource estimates assigned to the Coso Formation in the Owens Valley region. Uranium-potential-resource estimates for this area in $100 per pound U 3 O 8 forward-cost-category material have been estimatd to be 16,954 tons (15,384 metric tons). This estimate is based partly on project drilling results. Within the Owens Valley project area, the Coso Formation was encountered only in the Rose Valley region, and for this reason Rose Valley is considered to be the only portion of the project area favorable for economically sized uranium deposits. The sequence of sediments contained in the Owens Valley basin is considered to be largely equivalent but lithologically dissimilar to the Coso Formation of Haiwee Ridge and Rose Valley. The most important factor in the concentration of significant amounts of uranium in the rock units investigated appears to be the availability of reducing agents. Significant amounts of reductants (pyrite) were found in the Coso Formation. No organic debris was noted. Many small, disconnected uranium occurrences, 100 to 500 ppM U 3 O 8 , were encountered in several of the holes

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Valley dependent transport in graphene L junction

Science.gov (United States)

Chan, K. S.

2018-05-01

We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Symmetry protected topological charge in symmetry broken phase: Spin-Chern, spin-valley-Chern and mirror-Chern numbers

International Nuclear Information System (INIS)

Ezawa, Motohiko

2014-01-01

The Chern number is a genuine topological number. On the other hand, a symmetry protected topological (SPT) charge is a topological number only when a symmetry exists. We propose a formula for the SPT charge as a derivative of the Chern number in terms of the Green function in such a way that it is valid and related to the associated Hall current even when the symmetry is broken. We estimate the amount of deviation from the quantized value as a function of the strength of the broken symmetry. We present two examples. First, we consider Dirac electrons with the spin–orbit coupling on honeycomb lattice, where the SPT charges are given by the spin-Chern, valley-Chern and spin-valley-Chern numbers. Though the spin-Chern charge is not quantized in the presence of the Rashba coupling, the deviation is estimated to be 10 −7 in the case of silicene, a silicon cousin of graphene. Second, we analyze the effect of the mirror-symmetry breaking of the mirror-Chern number in a thin-film of topological crystalline insulator.

Microscopic Identification of Prokaryotes in Modern and Ancient Halite, Saline Valley and Death Valley, California

Science.gov (United States)

Schubert, Brian A.; Lowenstein, Tim K.; Timofeeff, Michael N.

2009-06-01

Primary fluid inclusions in halite crystallized in Saline Valley, California, in 1980, 2004-2005, and 2007, contain rod- and coccoid-shaped microparticles the same size and morphology as archaea and bacteria living in modern brines. Primary fluid inclusions from a well-dated (0-100,000 years), 90 m long salt core from Badwater Basin, Death Valley, California, also contain microparticles, here interpreted as halophilic and halotolerant prokaryotes. Prokaryotes are distinguished from crystals on the basis of morphology, optical properties (birefringence), and uniformity of size. Electron micrographs of microparticles from filtered modern brine (Saline Valley), dissolved modern halite crystals (Saline Valley), and dissolved ancient halite crystals (Death Valley) support in situ microscopic observations that prokaryotes are present in fluid inclusions in ancient halite. In the Death Valley salt core, prokaryotes in fluid inclusions occur almost exclusively in halite precipitated in perennial saline lakes 10,000 to 35,000 years ago. This suggests that trapping and preservation of prokaryotes in fluid inclusions is influenced by the surface environment in which the halite originally precipitated. In all cases, prokaryotes in fluid inclusions in halite from the Death Valley salt core are miniaturized (<1 μm diameter cocci, <2.5 μm long, very rare rod shapes), which supports interpretations that the prokaryotes are indigenous to the halite and starvation survival may be the normal response of some prokaryotes to entrapment in fluid inclusions for millennia. These results reinforce the view that fluid inclusions in halite and possibly other evaporites are important repositories of microbial life and should be carefully examined in the search for ancient microorganisms on Earth, Mars, and elsewhere in the Solar System.

Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

International Nuclear Information System (INIS)

Chowdhury, Subhra; Biswas, Dhrubes; Chattaraj, Swarnabha

2015-01-01

For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current–voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure. (paper)

Topological Valley Transport in Two-dimensional Honeycomb Photonic Crystals.

Science.gov (United States)

Yang, Yuting; Jiang, Hua; Hang, Zhi Hong

2018-01-25

Two-dimensional photonic crystals, in analogy to AB/BA stacking bilayer graphene in electronic system, are studied. Inequivalent valleys in the momentum space for photons can be manipulated by simply engineering diameters of cylinders in a honeycomb lattice. The inequivalent valleys in photonic crystal are selectively excited by a designed optical chiral source and bulk valley polarizations are visualized. Unidirectional valley interface states are proved to exist on a domain wall connecting two photonic crystals with different valley Chern numbers. With the similar optical vortex index, interface states can couple with bulk valley polarizations and thus valley filter and valley coupler can be designed. Our simple dielectric PC scheme can help to exploit the valley degree of freedom for future optical devices.

Polscy przedsiebiorcy w Dolinie Krzemowej

Directory of Open Access Journals (Sweden)

Dominika Latusek-Jurczak

2013-03-01

Full Text Available Purpose: This text is a review of the results of a research project on Polish entrepreneurs and Polish enterprises in Silicon Valley, conducted by the author in Silicon Valley in The United States in the years 2007–2012.Methodology: 81 participants took part in the research (members of 13 different companies and several government and third sector organizations. Among the organizations represented in the project there were companies established in the Valley by Poles, Polish companies present in the Valley, as well as institutions that are active in promotion and support of Polish business presence in the United States, especially in Silicon Valley.Findings: The research indicates that there are three main areas for improvement in Poland, if it is to be home to companies characterized by a potential for rapid growth (as the ones that Silicon Valley is famous for. The first one concerns cultural aspects associated with low tolerance of risk and social censure of those who fail in business. The second includes financing, in particular limited access to venture capital and business angels networks. The third one refers to business education of entrepreneurs, for whom gaining practical experiences in world-class centers of entrepreneurship, such as Silicon Valley, is of utmost importance.

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Mechanical control over valley magnetotransport in strained graphene

Energy Technology Data Exchange (ETDEWEB)

Ma, Ning, E-mail: maning@stu.xjtu.edu.cn [Department of Physics, MOE Key Laboratory of Advanced Transducers and Intelligent Control System, Taiyuan University of Technology, Taiyuan 030024 (China); Department of Applied Physics, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi' an Jiaotong University, Xi' an 710049 (China); Zhang, Shengli, E-mail: zhangsl@mail.xjtu.edu.cn [Department of Applied Physics, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi' an Jiaotong University, Xi' an 710049 (China); Liu, Daqing, E-mail: liudq@cczu.edu.cn [School of Mathematics and Physics, Changzhou University, Changzhou 213164 (China)

2016-05-06

Recent experiments report that the graphene exhibits Landau levels (LLs) that form in the presence of a uniform strain pseudomagnetic field with magnitudes up to hundreds of tesla. We further reveal that the strain removes the valley degeneracy in LLs, and leads to a significant valley polarization with inversion symmetry broken. This accordingly gives rise to the well separated valley Hall plateaus and Shubnikov–de Haas oscillations. These effects are absent in strainless graphene, and can be used to generate and detect valley polarization by mechanical means, forming the basis for the new paradigm “valleytronics” applications. - Highlights: • We explore the mechanical strain effects on the valley magnetotransport in graphene. • We analytically derive the dc collisional and Hall conductivities under strain. • The strain removes the valley degeneracy in Landau levels. • The strain causes a significant valley polarization with inversion symmetry broken. • The strain leads to the well separated valley Hall and Shubnikov–de Haas effects.

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

The geochemistry of groundwater resources in the Jordan Valley: The impact of the Rift Valley brines

Science.gov (United States)

Farber, E.; Vengosh, A.; Gavrieli, I.; Marie, Amarisa; Bullen, T.D.; Mayer, B.; Polak, A.; Shavit, U.

2007-01-01

The chemical composition of groundwater in the Jordan Valley, along the section between the Sea of Galilee and the Dead Sea, is investigated in order to evaluate the origin of the groundwater resources and, in particular, to elucidate the role of deep brines on the chemical composition of the regional groundwater resources in the Jordan Valley. Samples were collected from shallow groundwater in research boreholes on two sites in the northern and southern parts of the Jordan Valley, adjacent to the Jordan River. Data is also compiled from previous published studies. Geochemical data (e.g., Br/Cl, Na/Cl and SO4/Cl ratios) and B, O, Sr and S isotopic compositions are used to define groundwater groups, to map their distribution in the Jordan valley, and to evaluate their origin. The combined geochemical tools enabled the delineation of three major sources of solutes that differentially affect the quality of groundwater in the Jordan Valley: (1) flow and mixing with hypersaline brines with high Br/Cl (>2 ?? 10-3) and low Na/Cl (shallow saline groundwaters influenced by brine mixing exhibit a north-south variation in their Br/Cl and Na/Cl ratios. This chemical trend was observed also in hypersaline brines in the Jordan valley, which suggests a local mixing process between the water bodies. ?? 2007 Elsevier Ltd. All rights reserved.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

Science.gov (United States)

Cho, Heesook; Yoo, Hana; Park, Soojin

2010-05-18

Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

Siim Kallas kohtus California kuberneri Schwarzeneggeriga / Holger Roonemaa

Index Scriptorium Estoniae

Roonemaa, Holger

2008-01-01

Euroopa Komisjoni asepresident Siim Kallas käis visiidil USA-s Silicon Valleys tutvumas maailma suuremate infotehnoloogiafirmadega. Kallase sõnul peaksid ambitsioonidega Eesti ettevõtetel kindlasti olema sidemed ka Silicon Valleys. Henrik Hololei arvamus

27 CFR 9.27 - Lime Kiln Valley.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Lime Kiln Valley. 9.27... OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.27 Lime Kiln Valley. (a) Name. The name of the viticultural area described in this section is “Lime Kiln Valley...

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

A valley-filtering switch based on strained graphene.

Science.gov (United States)

Zhai, Feng; Ma, Yanling; Zhang, Ying-Tao

2011-09-28

We investigate valley-dependent transport through a graphene sheet modulated by both the substrate strain and the fringe field of two parallel ferromagnetic metal (FM) stripes. When the magnetizations of the two FM stripes are switched from the parallel to the antiparallel alignment, the total conductance, valley polarization and valley conductance excess change greatly over a wide range of Fermi energy, which results from the dependence of the valley-related transmission suppression on the polarity configuration of inhomogeneous magnetic fields. Thus the proposed structure exhibits the significant features of a valley-filtering switch and a magnetoresistance device.

A valley-filtering switch based on strained graphene

International Nuclear Information System (INIS)

Zhai Feng; Ma Yanling; Zhang Yingtao

2011-01-01

We investigate valley-dependent transport through a graphene sheet modulated by both the substrate strain and the fringe field of two parallel ferromagnetic metal (FM) stripes. When the magnetizations of the two FM stripes are switched from the parallel to the antiparallel alignment, the total conductance, valley polarization and valley conductance excess change greatly over a wide range of Fermi energy, which results from the dependence of the valley-related transmission suppression on the polarity configuration of inhomogeneous magnetic fields. Thus the proposed structure exhibits the significant features of a valley-filtering switch and a magnetoresistance device. (paper)

Electrical valley filtering in transition metal dichalcogenides

Science.gov (United States)

Hsieh, Tzu-Chi; Chou, Mei-Yin; Wu, Yu-Shu

2018-03-01

This work investigates the feasibility of electrical valley filtering for holes in transition metal dichalcogenides. We look specifically into the scheme that utilizes a potential barrier to produce valley-dependent tunneling rates, and perform the study with both a k .p -based analytic method and a recursive Green's function-based numerical method. The study yields the transmission coefficient as a function of incident energy and transverse wave vector, for holes going through lateral quantum barriers oriented in either armchair or zigzag directions, in both homogeneous and heterogeneous systems. The main findings are the following: (1) The tunneling current valley polarization increases with increasing barrier width or height; (2) both the valley-orbit interaction and band structure warping contribute to valley-dependent tunneling, with the former contribution being manifest in structures with asymmetric potential barriers, and the latter being orientation dependent and reaching maximum for transmission in the armchair direction; and (3) for transmission ˜0.1 , a tunneling current valley polarization of the order of 10 % can be achieved.

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Water resources of Parowan Valley, Iron County, Utah

Science.gov (United States)

Marston, Thomas M.

2017-08-29

Parowan Valley, in Iron County, Utah, covers about 160 square miles west of the Red Cliffs and includes the towns of Parowan, Paragonah, and Summit. The valley is a structural depression formed by northwest-trending faults and is, essentially, a closed surface-water basin although a small part of the valley at the southwestern end drains into the adjacent Cedar Valley. Groundwater occurs in and has been developed mainly from the unconsolidated basin-fill aquifer. Long-term downward trends in groundwater levels have been documented by the U.S. Geological Survey (USGS) since the mid-1950s. The water resources of Parowan Valley were assessed during 2012 to 2014 with an emphasis on refining the understanding of the groundwater and surface-water systems and updating the groundwater budget.Surface-water discharge of five perennial mountain streams that enter Parowan Valley was measured from 2013 to 2014. The total annual surface-water discharge of the five streams during 2013 to 2014 was about 18,000 acre-feet (acre-ft) compared to the average annual streamflow of about 22,000 acre-ft from USGS streamgages operated on the three largest of these streams from the 1940s to the 1980s. The largest stream, Parowan Creek, contributes more than 50 percent of the annual surface-water discharge to the valley, with smaller amounts contributed by Red, Summit, Little, and Cottonwood Creeks.Average annual recharge to the Parowan Valley groundwater system was estimated to be about 25,000 acre-ft from 1994 to 2013. Nearly all recharge occurs as direct infiltration of snowmelt and rainfall on the Markagunt Plateau east of the valley. Smaller amounts of recharge occur as infiltration of streamflow and unconsumed irrigation water near the east side of the valley on alluvial fans associated with mountain streams at the foot of the Red Cliffs. Subsurface flow from the mountain block to the east of the valley is a significant source of groundwater recharge to the basin-fill aquifer

EPA Region 1 - Valley Depth in Meters

Science.gov (United States)

Raster of the Depth in meters of EPA-delimited Valleys in Region 1.Valleys (areas that are lower than their neighbors) were extracted from a Digital Elevation Model (USGS, 30m) by finding the local average elevation, subtracting the actual elevation from the average, and selecting areas where the actual elevation was below the average. The landscape was sampled at seven scales (circles of 1, 2, 4, 7, 11, 16, and 22 km radius) to take into account the diversity of valley shapes and sizes. Areas selected in at least four scales were designated as valleys.

Preliminary hydrogeologic assessment near the boundary of the Antelope Valley and El Mirage Valley groundwater basins, California

Science.gov (United States)

Stamos, Christina L.; Christensen, Allen H.; Langenheim, Victoria

2017-07-19

The increasing demands on groundwater for water supply in desert areas in California and the western United States have resulted in the need to better understand groundwater sources, availability, and sustainability. This is true for a 650-square-mile area that encompasses the Antelope Valley, El Mirage Valley, and Upper Mojave River Valley groundwater basins, about 50 miles northeast of Los Angeles, California, in the western part of the Mojave Desert. These basins have been adjudicated to ensure that groundwater rights are allocated according to legal judgments. In an effort to assess if the boundary between the Antelope Valley and El Mirage Valley groundwater basins could be better defined, the U.S. Geological Survey began a cooperative study in 2014 with the Mojave Water Agency to better understand the hydrogeology in the area and investigate potential controls on groundwater flow and availability, including basement topography.Recharge is sporadic and primarily from small ephemeral washes and streams that originate in the San Gabriel Mountains to the south; estimates range from about 400 to 1,940 acre-feet per year. Lateral underflow from adjacent basins has been considered minor in previous studies; underflow from the Antelope Valley to the El Mirage Valley groundwater basin has been estimated to be between 100 and 1,900 acre-feet per year. Groundwater discharge is primarily from pumping, mostly by municipal supply wells. Between October 2013 and September 2014, the municipal pumpage in the Antelope Valley and El Mirage Valley groundwater basins was reported to be about 800 and 2,080 acre-feet, respectively.This study was motivated by the results from a previously completed regional gravity study, which suggested a northeast-trending subsurface basement ridge and saddle approximately 3.5 miles west of the boundary between the Antelope Valley and El Mirage Valley groundwater basins that might influence groundwater flow. To better define potential basement

Optically initialized robust valley-polarized holes in monolayer WSe2

KAUST Repository

Hsu, Wei-Ting

2015-11-25

A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin–valley coupling offer a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe2 can be initialized by optical pumping. Using time-resolved Kerr rotation spectroscopy, we observe a long-lived valley polarization for positive trion with a lifetime approaching 1 ns at low temperatures, which is much longer than the trion recombination lifetime (~10–20 ps). The long-lived valley polarization arises from the transfer of valley pseudospin from photocarriers to resident holes in a specific valley. The optically initialized valley pseudospin of holes remains robust even at room temperature, which opens up the possibility to realize room-temperature valleytronics based on transition metal dichalcogenides.

Geohydrology of the Unconsolidated Valley-Fill Aquifer in the Meads Creek Valley, Schuyler and Steuben Counties, New York

Science.gov (United States)

Miller, Todd S.; Bugliosi, Edward F.; Reddy, James E.

2008-01-01

The Meads Creek valley encompasses 70 square miles of predominantly forested uplands in the upper Susquehanna River drainage basin. The valley, which was listed as a Priority Waterbody by the New York State Department of Environmental Conservation in 2004, is prone to periodic flooding, mostly in its downstream end, where development is occurring most rapidly. Hydraulic characteristics of the unconsolidated valley-fill aquifer were evaluated, and seepage rates in losing and gaining tributaries were calculated or estimated, in an effort to delineate the aquifer geometry and identify the factors that contribute to flooding. Results indicated that (1) Meads Creek gained about 61 cubic feet of flow per second (about 6.0 cubic feet per second per mile of stream channel) from ground-water discharge and inflow from tributaries in its 10.2-mile reach between the northernmost and southernmost measurement sites; (2) major tributaries in the northern part of the valley are not significant sources of recharge to the aquifer; and (3) major tributaries in the central and southern part of the valley provide recharge to the aquifer. The ground-water portion of streamflow in Meads Creek (excluding tributary inflow) was 11.3 cubic feet per second (ft3/s) in the central part of the valley and 17.2 ft3/s in the southern part - a total of 28.5 ft3/s. Ground-water levels were measured in 29 wells finished in unconfined deposits for construction of a potentiometric-surface map to depict directions of ground-water flow within the valley. In general, ground water flows from the edges of the valley toward Meads Creek and ultimately discharges to it. The horizontal hydraulic gradient for the entire 12-mile-long aquifer averages about 30 feet per mile, whereas the gradient in the southern fourth of the valley averages about half that - about 17 feet per mile. A water budget for the aquifer indicated that 28 percent of recharge was derived from precipitation that falls on the aquifer, 32

California's Central Valley Groundwater Study: A Powerful New Tool to Assess Water Resources in California's Central Valley

Science.gov (United States)

Faunt, Claudia C.; Hanson, Randall T.; Belitz, Kenneth; Rogers, Laurel

2009-01-01

Competition for water resources is growing throughout California, particularly in the Central Valley. Since 1980, the Central Valley's population has nearly doubled to 3.8 million people. It is expected to increase to 6 million by 2020. Statewide population growth, anticipated reductions in Colorado River water deliveries, drought, and the ecological crisis in the Sacramento-San Joaquin Delta have created an intense demand for water. Tools and information can be used to help manage the Central Valley aquifer system, an important State and national resource.

Geochemistry of silicon isotopes

Energy Technology Data Exchange (ETDEWEB)

Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

2018-04-01

Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

Building a Successful Technology Cluster

Science.gov (United States)

Silicon Valley is the iconic cluster—a dense regional network of companies, universities, research institutions, and other stakeholders involved in a single industry. Many regions have sought to replicate the success of Silicon Valley, which has produced technological innov...

Valley and spin thermoelectric transport in ferromagnetic silicene junctions

International Nuclear Information System (INIS)

Ping Niu, Zhi; Dong, Shihao

2014-01-01

We have investigated the valley and spin resolved thermoelectric transport in a normal/ferromagnetic/normal silicene junction. Due to the coupling between the valley and spin degrees of freedom, thermally induced pure valley and spin currents can be demonstrated. The magnitude and sign of these currents can be manipulated by adjusting the ferromagnetic exchange field and local external electric field, thus the currents are controllable. We also find fully valley and/or spin polarized currents. Similar to the currents, owing to the band structure symmetry, tunable pure spin and/or valley thermopowers with zero charge counterpart are generated. The results obtained here suggest a feasible way of generating a pure valley (spin) current and thermopower in silicene

Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

International Nuclear Information System (INIS)

Jiang Xiang-Wei; Li Shu-Shen

2012-01-01

By using the linear combination of bulk band (LCBB) method incorporated with the top of the barrier splitting (TBS) model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate (DG) metal—oxide—semiconductor field-effect transistors (MOSFETs). A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness (2.0 nm and below) by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Engineering assessment of inactive uranium mill tailings: Monument Valley Site, Monument Valley, Arizona

Energy Technology Data Exchange (ETDEWEB)

1981-10-01

Ford, Bacon and Davis Utah Inc. has reevalated the Monument Valley site in order to revise the March 1977 engineering assessment of the problems resulting from the existence of radioactive uranium mill tailings at Monument Valley, Arizona. This engineering assessment has included the preparation of topographic maps, the performance of core drillings and radiometric measurements sufficient to determine areas and volumes of tailings and radiation exposure of individuals and nearby populations, the investigations of site hydrology and meteorology, and the evaluation and costing of alternative corrective actions. Radon gas released from the 1.1 million tons of tailings at the Monument Valley site constitutes the most significant environmental impact, although windblown tailings and external gamma radiation also are factors. The four alternative actions presented in this engineering assessment range from millsite decontamination with the addition of 3 m of stabilization cover material (Option I), to removal of the tailings to remote disposal sites and decontamination of the tailings site (Options II through IV). Cost estimates for the four options range from about $6,600,000 for stabilization in-place, to about $15,900,000 for disposal at a distance of about 15 mi. Three principal alternatives for reprocessing the Monument Valley tailings were examined: heap leaching; Treatment at an existing mill; and reprocessing at a new conventional mill constructed for tailings reprocessing. The cost of the uranium recovery is economically unattractive.

Engineering assessment of inactive uranium mill tailings: Monument Valley Site, Monument Valley, Arizona

International Nuclear Information System (INIS)

1981-10-01

Ford, Bacon and Davis Utah Inc. has reevalated the Monument Valley site in order to revise the March 1977 engineering assessment of the problems resulting from the existence of radioactive uranium mill tailings at Monument Valley, Arizona. This engineering assessment has included the preparation of topographic maps, the performance of core drillings and radiometric measurements sufficient to determine areas and volumes of tailings and radiation exposure of individuals and nearby populations, the investigations of site hydrology and meteorology, and the evaluation and costing of alternative corrective actions. Radon gas released from the 1.1 million tons of tailings at the Monument Valley site constitutes the most significant environmental impact, although windblown tailings and external gamma radiation also are factors. The four alternative actions presented in this engineering assessment range from millsite decontamination with the addition of 3 m of stabilization cover material (Option I), to removal of the tailings to remote disposal sites and decontamination of the tailings site (Options II through IV). Cost estimates for the four options range from about $6,600,000 for stabilization in-place, to about $15,900,000 for disposal at a distance of about 15 mi. Three principal alternatives for reprocessing the Monument Valley tailings were examined: heap leaching; Treatment at an existing mill; and reprocessing at a new conventional mill constructed for tailings reprocessing. The cost of the uranium recovery is economically unattractive

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Sustainable agricultural development in inland valleys

NARCIS (Netherlands)

Zwart, S.J.

2018-01-01

The inland valley in Africa are common landscapes that have favorable conditions for agricultural production. Compared to the surrounding uplands they are characterized by a relatively high and secure water availability and high soil fertility levels. Inland valleys thus have a high agricultural

Valley-polarized quantum transport generated by gauge fields in graphene

Science.gov (United States)

Settnes, Mikkel; Garcia, Jose H.; Roche, Stephan

2017-09-01

We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a ‘resonance/anti-resonance’ effect driven by the superposition/cancellation of superimposed gauge fields which differently affect time reversal symmetry. The onset of a valley-polarized Hall current concomitant to a dissipative valley-polarized current flow in the opposite valley is revealed by a {{e}2}/h Hall conductivity plateau. We employ efficient linear scaling Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder.

Groundwater availability of the Central Valley Aquifer, California

Science.gov (United States)

Faunt, Claudia C.

2009-01-01

California's Central Valley covers about 20,000 square miles and is one of the most productive agricultural regions in the world. More than 250 different crops are grown in the Central Valley with an estimated value of $17 billion per year. This irrigated agriculture relies heavily on surface-water diversions and groundwater pumpage. Approximately one-sixth of the Nation's irrigated land is in the Central Valley, and about one-fifth of the Nation's groundwater demand is supplied from its aquifers. The Central Valley also is rapidly becoming an important area for California's expanding urban population. Since 1980, the population of the Central Valley has nearly doubled from 2 million to 3.8 million people. The Census Bureau projects that the Central Valley's population will increase to 6 million people by 2020. This surge in population has increased the competition for water resources within the Central Valley and statewide, which likely will be exacerbated by anticipated reductions in deliveries of Colorado River water to southern California. In response to this competition for water, a number of water-related issues have gained prominence: conservation of agricultural land, conjunctive use, artificial recharge, hydrologic implications of land-use change, and effects of climate variability. To provide information to stakeholders addressing these issues, the USGS Groundwater Resources Program made a detailed assessment of groundwater availability of the Central Valley aquifer system, that includes: (1) the present status of groundwater resources; (2) how these resources have changed over time; and (3) tools to assess system responses to stresses from future human uses and climate variability and change. This effort builds on previous investigations, such as the USGS Central Valley Regional Aquifer System and Analysis (CV-RASA) project and several other groundwater studies in the Valley completed by Federal, State and local agencies at differing scales. The

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

An example of Alaknanda valley, Garhwal Himalaya, India

Indian Academy of Sciences (India)

2014) have been best explained by the geometry .... flows through narrow valley confined by the steep valley slopes. ... valley (figure 3b) which opens up around Srina- ... Method. 4.1 Drainage basin and stream network. Digital Elevation Model (DEM) helps in extracting ... was processed to fill the pits or sinks, and to obtain.

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

California's restless giant: the Long Valley Caldera

Science.gov (United States)

Hill, David P.; Bailey, Roy A.; Hendley, James W.; Stauffer, Peter H.; Marcaida, Mae

2014-01-01

Scientists have monitored geologic unrest in the Long Valley, California, area since 1980. In that year, following a swarm of strong earthquakes, they discovered that the central part of the Long Valley Caldera had begun actively rising. Unrest in the area persists today. The U.S. Geological Survey (USGS) continues to provide the public and civil authorities with current information on the volcanic hazard at Long Valley and is prepared to give timely warnings of any impending eruption.

Nonlinear silicon photonics

Science.gov (United States)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

International Nuclear Information System (INIS)

Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

2001-01-01

The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

Valley Fever

Science.gov (United States)

... valley fever. These fungi are commonly found in soil in specific regions. The fungi's spores can be stirred into the air by ... species have a complex life cycle. In the soil, they grow as a mold with long filaments that break off into airborne ...

Nematic and Valley Ordering in Anisotropic Quantum Hall Systems

Science.gov (United States)

Parameswaran, S. A.; Abanin, D. A.; Kivelson, S. A.; Sondhi, S. L.

2010-03-01

We consider a multi-valley two dimensional electron system in the quantum Hall effect (QHE) regime. We focus on QHE states that arise due to spontaneous breaking of the valley symmetry by the Coulomb interactions. We show that the anisotropy of the Fermi surface in each valley, which is generally present in such systems, favors states where all the electrons reside in one of the valleys. In a clean system, the valley ordering occurs via a finite temperature Ising-like phase transition, which, owing to the Fermi surface anisotropy, is accompanied by the onset of nematic order. In a disordered system, domains of opposite polarization are formed, and therefore long-range valley order is destroyed, however, the resulting state is still compressible. We discuss the transport properties in ordered and disordered regimes, and point out the possible relation of our results to recent experiments in AlAs [1]. [1] Y. P. Shkolnikov, S. Misra, N. C. Bishop, E. P. De Poortere, and M. Shayegan, Observation of Quantum Hall ``Valley Skyrmions", Phys. Rev. Lett. 95, 068809 (2005)[2] D.A. Abanin, S.A. Parameswaran, S.A. Kivelson and S.L. Sondhi, Nematic and Valley Ordering in Anisotropic Quantum Hall Systems, to be published.

Single-electron regime and Pauli spin blockade in a silicon metal-oxide-semiconductor double quantum dot

Science.gov (United States)

Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel

2015-03-01

Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto

2014-02-25

In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

Silicon Microspheres Photonics

International Nuclear Information System (INIS)

Serpenguzel, A.

2008-01-01

Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

Surfing Silicon Nanofacets for Cold Cathode Electron Emission Sites.

Science.gov (United States)

Basu, Tanmoy; Kumar, Mohit; Saini, Mahesh; Ghatak, Jay; Satpati, Biswarup; Som, Tapobrata

2017-11-08

Point sources exhibit low threshold electron emission due to local field enhancement at the tip. In the case of silicon, however, the realization of tip emitters has been hampered by unwanted oxidation, limiting the number of emission sites and the overall current. In contrast to this, here, we report the fascinating low threshold (∼0.67 V μm -1 ) cold cathode electron emission from silicon nanofacets (Si-NFs). The ensembles of nanofacets fabricated at different time scales, under low energy ion impacts, yield tunable field emission with a Fowler-Nordheim tunneling field in the range of 0.67-4.75 V μm -1 . The local probe surface microscopy-based tunneling current mapping in conjunction with Kelvin probe force microscopy measurements revealed that the valleys and a part of the sidewalls of the nanofacets contribute more to the field emission process. The observed lowest turn-on field is attributed to the absence of native oxide on the sidewalls of the smallest facets as well as their lowest work function. In addition, first-principle density functional theory-based simulation revealed a crystal orientation-dependent work function of Si, which corroborates well with our experimental observations. The present study demonstrates a novel way to address the origin of the cold cathode electron emission sites from Si-NFs fabricated at room temperature. In principle, the present methodology can be extended to probe the cold cathode electron emission sites from any nanostructured material.

Valley photonic crystals for control of spin and topology.

Science.gov (United States)

Dong, Jian-Wen; Chen, Xiao-Dong; Zhu, Hanyu; Wang, Yuan; Zhang, Xiang

2017-03-01

Photonic crystals offer unprecedented opportunity for light manipulation and applications in optical communication and sensing. Exploration of topology in photonic crystals and metamaterials with non-zero gauge field has inspired a number of intriguing optical phenomena such as one-way transport and Weyl points. Recently, a new degree of freedom, valley, has been demonstrated in two-dimensional materials. Here, we propose a concept of valley photonic crystals with electromagnetic duality symmetry but broken inversion symmetry. We observe photonic valley Hall effect originating from valley-dependent spin-split bulk bands, even in topologically trivial photonic crystals. Valley-spin locking behaviour results in selective net spin flow inside bulk valley photonic crystals. We also show the independent control of valley and topology in a single system that has been long pursued in electronic systems, resulting in topologically-protected flat edge states. Valley photonic crystals not only offer a route towards the observation of non-trivial states, but also open the way for device applications in integrated photonics and information processing using spin-dependent transportation.

Valley Hall effect and Nernst effect in strain engineered graphene

Science.gov (United States)

Niu, Zhi Ping; Yao, Jian-ming

2018-04-01

We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current. It is expected these features may be helpful in the design of the controllable valleytronic devices.

Disorder-dependent valley properties in monolayer WSe2

KAUST Repository

Tran, Kha

2017-07-19

We investigate the effect of disorder on exciton valley polarization and valley coherence in monolayer WSe2. By analyzing the polarization properties of photoluminescence, the valley coherence (VC) and valley polarization (VP) are quantified across the inhomogeneously broadened exciton resonance. We find that disorder plays a critical role in the exciton VC, while affecting VP less. For different monolayer samples with disorder characterized by their Stokes shift (SS), VC decreases in samples with higher SS while VP does not follow a simple trend. These two methods consistently demonstrate that VC as defined by the degree of linearly polarized photoluminescence is more sensitive to disorder, motivating further theoretical studies.

Production of technical silicon and silicon carbide from rice-husk

Directory of Open Access Journals (Sweden)

A. Z. Issagulov

2014-10-01

Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

International Nuclear Information System (INIS)

Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

2012-01-01

Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

The Role of Source Material in Basin Sedimentation, as Illustrated within Eureka Valley, Death Valley National Park, CA.

Science.gov (United States)

Lawson, M. J.; Yin, A.; Rhodes, E. J.

2015-12-01

Steep landscapes are known to provide sediment to sink regions, but often petrological factors can dominate basin sedimentation. Within Eureka Valley, in northwestern Death Valley National Park, normal faulting has exposed a steep cliff face on the western margin of the Last Chance range with four kilometers of vertical relief from the valley floor and an angle of repose of nearly 38 degrees. The cliff face is composed of Cambrian limestone and dolomite, including the Bonanza King, Carrara and Wood Canyon formations. Interacting with local normal faulting, these units preferentially break off the cliff face in coherent blocks, which result in landslide deposits rather than as finer grained material found within the basin. The valley is well known for a large sand dune, which derives its sediment from distal sources to the north, instead of from the adjacent Last Chance Range cliff face. During the Holocene, sediment is sourced primary from the northerly Willow Wash and Cucomungo canyon, a relatively small drainage (less than 80 km2) within the Sylvan Mountains. Within this drainage, the Jurassic quartz monzonite of Beer Creek is heavily fractured due to motion of the Fish Valley Lake - Death Valley fault zone. Thus, the quartz monzonite is more easily eroded than the well-consolidated limestone and dolomite that forms the Last Change Range cliff face. As well, the resultant eroded material is smaller grained, and thus more easily transported than the limestone. Consequently, this work highlights an excellent example of the strong influence that source material can have on basin sedimentation.

Performance improvement of silicon solar cells by nanoporous silicon coating

Directory of Open Access Journals (Sweden)

Dzhafarov T. D.

2012-04-01

Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

Science.gov (United States)

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

Antifan activism as a response to MTV's The Valleys

Directory of Open Access Journals (Sweden)

Bethan Jones

2015-06-01

Full Text Available MTV has launched several reality TV shows in the United Kingdom, but one, The Valleys (2012–14, about youth moving from the South Wales Valleys to Cardiff, has received much criticism. Grassroots criticism of the show arose, and a Valleys-centric campaign, The Valleys Are Here, took direct action. I adopt Jonathan Gray's definition of antifans to complicate ideas of fan activism. I utilize comments and posts made on the Valleys Are Here Twitter feed and Facebook account, as well as the organization's Web site, to examine the ways in which they encourage activism among antifans of the series. I pay particular attention to activist calls for MTV to be held accountable for its positioning of Wales and the Valleys, and to how it encourages participation among varied groups of people whose common denominator is their dislike of the series. Fan activism is not exclusive to people who consider themselves fans, and notions of fan activism can be complicated by drawing in antifans.

Band structure of germanium carbides for direct bandgap silicon photonics

Energy Technology Data Exchange (ETDEWEB)

Stephenson, C. A., E-mail: cstephe3@nd.edu; Stillwell, R. A.; Wistey, M. A. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); O' Brien, W. A. [Rigetti Quantum Computing, 775 Heinz Avenue, Berkeley, California 94710 (United States); Penninger, M. W. [Honeywell UOP, Des Plaines, Illinois 60016 (United States); Schneider, W. F. [Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Gillett-Kunnath, M. [Department of Chemistry, Syracuse University, Syracuse, New York 13244 (United States); Zajicek, J. [Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Yu, K. M. [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

2016-08-07

Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge{sub 1−x}C{sub x} (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge{sub 0.998}C{sub 0.002} shows a bandgap reduction supporting these results. Growth of Ge{sub 0.998}C{sub 0.002} using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III–V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

Release of low molecular weight silicones and platinum from silicone breast implants.

Science.gov (United States)

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

The quasi-steady state of the valley wind system

Directory of Open Access Journals (Sweden)

Juerg eSchmidli

2015-12-01

Full Text Available The quasi-steady-state limit of the diurnal valley wind system is investigated overidealized three-dimensional topography. Although this limit is rarely attained inreality due to ever-changing forcings, the investigation of this limit canprovide valuable insight, in particular on the mass and heat fluxes associatedwith the along-valley wind. We derive a scaling relation for the quasi-steady-state along-valleymass flux as a function of valley geometry, valley size, atmospheric stratification,and surface sensible heat flux forcing. The scaling relation is tested by comparisonwith the mass flux diagnosed from numerical simulations of the valleywind system. Good agreement is found. The results also provide insight into the relationbetween surface friction and the strength of the along-valley pressure gradient.

Direct measurement of exciton valley coherence in monolayer WSe2

KAUST Repository

Hao, Kai

2016-02-29

In crystals, energy band extrema in momentum space can be identified by a valley index. The internal quantum degree of freedom associated with valley pseudospin indices can act as a useful information carrier, analogous to electronic charge or spin. Interest in valleytronics has been revived in recent years following the discovery of atomically thin materials such as graphene and transition metal dichalcogenides. However, the valley coherence time—a crucial quantity for valley pseudospin manipulation—is difficult to directly probe. In this work, we use two-dimensional coherent spectroscopy to resonantly generate and detect valley coherence of excitons (Coulomb-bound electron–hole pairs) in monolayer WSe₂ (refs ,). The imposed valley coherence persists for approximately one hundred femtoseconds. We propose that the electron–hole exchange interaction provides an important decoherence mechanism in addition to exciton population recombination. This work provides critical insight into the requirements and strategies for optical manipulation of the valley pseudospin for future valleytronics applications.

Light emitting structures porous silicon-silicon substrate

International Nuclear Information System (INIS)

Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

1999-01-01

The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

International Nuclear Information System (INIS)

Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

2000-01-01

In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

Photon wavelength dependent valley photocurrent in multilayer MoS2

Science.gov (United States)

Guan, Hongming; Tang, Ning; Xu, Xiaolong; Shang, LiangLiang; Huang, Wei; Fu, Lei; Fang, Xianfa; Yu, Jiachen; Zhang, Caifeng; Zhang, Xiaoyue; Dai, Lun; Chen, Yonghai; Ge, Weikun; Shen, Bo

2017-12-01

The degree of freedom (DOF) of the K (K') valley in transition-metal dichalcogenides, especially molybdenum disulfide (MoS2), offers an opportunity for next-generation valleytronics devices. In this work, the K (K') valley DOF of multilayer MoS2 is studied by means of the photon wavelength dependent circular photogalvanic effect (CPGE) at room temperature upon a strong external out-of-plane electric field induced by an ionic liquid (IL) gate, which breaks the spatial-inversion symmetry. It is demonstrated that only on resonant excitations in the K (K') valley can the valley-related CPGE signals in multilayer MoS2 with an IL gate be detected, indicating that the valley contrast is indeed regenerated between the K and K' valleys when the electric field is applied. As expected, it can also be seen that the K (K') valley DOF in multilayer MoS2 can be modulated by the external electric field. The observation of photon wavelength dependent valley photocurrent in multilayer MoS2, with the help of better Ohmic contacts, may pave a way for optoelectronic applications of valleytronics in the future.

Spin-valley splitting of electron beam in graphene

Directory of Open Access Journals (Sweden)

Yu Song

2016-11-01

Full Text Available We study spatial separation of the four degenerate spin-valley components of an electron beam in a EuO-induced and top-gated ferromagnetic/pristine/strained graphene structure. We show that, in a full resonant tunneling regime for all beam components, the formation of standing waves can lead sudden phase jumps ∼−π and giant lateral Goos-Hänchen shifts as large as the transverse beam width, while the interplay of the spin and valley imaginary wave vectors in the modulated regions can lead differences of resonant angles for the four spin-valley flavors, manifesting a spin-valley beam splitting effect. The splitting effect is found to be controllable by the gating and strain.

Silicon detectors

International Nuclear Information System (INIS)

Klanner, R.

1984-08-01

The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

FTIR studies of swift silicon and oxygen ion irradiated porous silicon

International Nuclear Information System (INIS)

Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

1999-01-01

Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

Pensionitõus ja pangad / Marika Tuus

Index Scriptorium Estoniae

Tuus, Marika, 1951-

2006-01-01

Ilmunud ka: Videvik 16. märts lk. 3, Vali Uudised 17. märts lk. 2, Meie Maa 18. märts lk. 2, Virumaa Teataja, Pärnu Postimees, Harjumaa, Põhjarannik, Severnoje Poberezhje 21. märts lk. 11,19,7,2,5, Nädaline 28. märts lk. 3. 1. apr. viiakse läbi teine uue valitsuse erakonnaline pensionitõus. Pangad on laenuandmise vanusepiirangut kergitanud 10 aasta võrra

Tõde pensionide kojukande kohta / Marika Tuus

Index Scriptorium Estoniae

Tuus, Marika, 1951-

2008-01-01

Pensionide kojukande muudatustest ning vastuseks 28. oktoobri ajalehes ilmunud Heljo Pikhofi artiklile "Pensioniraha jõuab igaüheni". Ilmunud ka Harju Ekspress 7. nov. 2008, lk. 9 ; Põhjarannik 6. nov. 2008, lk. 2 ; Võrumaa Teataja 8. nov. 2008, lk. 2 ; Pärnu Postimees 6. nov. 2008, lk. 11 ; Vooremaa 13. nov. 2008, lk. 2 ; Virumaa Teataja 21. nov. 2008, lk. 11, pealkiri kujul: veel pensionide kojukandest ; Sõnumitooja 12. nov. 2008, lk. 2

Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

International Nuclear Information System (INIS)

Chao, D.S.; Liang, J.H.

2013-01-01

Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

The carbon stable isotope biogeochemistry of streams, Taylor Valley, Antarctica

International Nuclear Information System (INIS)

Lyons, W.B.; Leslie, D.L.; Harmon, R.S.; Neumann, K.; Welch, K.A.; Bisson, K.M.; McKnight, D.M.

2013-01-01

Highlights: ► δ 13 C-DIC reported from McMurdo Dry Valleys, Antarctica, streams. ► Stream water δ 13 C PDB values range −9.4‰ to +5.1‰, largely inorganic in character. ► Atmospheric exchange is the dominant control on δ 13 C-DIC. - Abstract: The McMurdo Dry Valleys region of Antarctica is the largest ice-free region on the continent. This study reports the first C stable isotope measurements for dissolved inorganic C present in ephemeral streams in four dry valleys that flow for four to twelve weeks during the austral summer. One of these valleys, Taylor Valley, has been the focus of the McMurdo Dry Valleys Long-Term Ecological Research (MCM-LTER) program since 1993. Within Taylor Valley, numerous ephemeral streams deliver water to three perennially ice-covered, closed-basin lakes: Lake Fryxell, Lake Hoare, and Lake Bonney. The Onyx River in the Wright Valley, the longest river in Antarctica, flows for 40 km from the Wright Lower Glacier and Lake Brownworth at the foot of the glacier to Lake Vanda. Streamflow in the McMurdo Dry Valley streams is produced primarily from glacial melt, as there is no overland flow. However, hyporheic zone exchange can be a major hydrogeochemical process in these streams. Depending on landscape position, these streams vary in gradient, channel substrate, biomass abundance, and hyporheic zone extent. This study sampled streams from Taylor, Wright, Garwood, and Miers Valleys and conducted diurnal sampling of two streams of different character in Taylor Valley. In addition, transect sampling was undertaken of the Onyx River in Wright Valley. The δ 13 C PDB values from these streams span a range of greater than 14‰, from −9.4‰ to +5.1‰, with the majority of samples falling between −3‰ and +2‰, suggesting that the C stable isotope composition of dissolved C in McMurdo Dry Valley streams is largely inorganic in character. Because there are no vascular plants on this landscape and no groundwater input to these

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

Czech Academy of Sciences Publication Activity Database

Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

2016-01-01

Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Legolandskabet

DEFF Research Database (Denmark)

Bundesen Svarre, Birgitte

2007-01-01

En læsning af Silicon Valley med fokus på arbejdsrum. Googles hovedkvarter sættes i relief af Douglas Couplands roman 'Microserfs' (1995), der foregår i Silicon Valley. Lego er en tilbagevendende metafor i romanen og søges sat over for Googles virkelighed anno 2006....

Valley-polarized quantum transport generated by gauge fields in graphene

DEFF Research Database (Denmark)

Settnes, Mikkel; Garcia, Jose H; Roche, Stephan

2017-01-01

We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a ‘resonance/anti-resonance’ effect driven by t...... Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder....

Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

Directory of Open Access Journals (Sweden)

Eugenijus SHATKOVSKIS

2012-09-01

Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

Chiral silicon nanostructures

International Nuclear Information System (INIS)

Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

2006-01-01

Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Science.gov (United States)

Tong, Wen-Yi; Duan, Chun-Gang

2017-08-01

In analogy to all-electric spintronics, all-electric valleytronics, i.e., valley manipulation via electric means, becomes an exciting new frontier as it may bring revolutions in the field of data storage with ultra-high speed and ultra-low power consumption. The existence of the anomalous valley Hall effect in ferrovalley materials demonstrates the possibility of electrical detection for valley polarization. However, in previously proposed valley-polarized monolayers, the anomalous valley Hall effect is controlled by external magnetic fields. Here, through elaborate structural design, we propose the antiferrovally bilayer as an ideal candidate for realizing all-electric valleytronic devices. Using the minimal k.p model, we show that the energy degeneracy between valley indexes in such system can be lifted by electric approaches. Subsequently, the anomalous valley Hall effect strongly depends on the electric field as well. Taking the bilayer VSe2 as an example, all-electric tuning and detecting of anomalous valley Hall effect is confirmed by density-functional theory calculations, indicating that the valley information in such antiferrovalley bilayer can be reversed by an electric field perpendicular to the plane of the system and easily probed through the sign of the Hall voltage.

The chemistry of silicon

CERN Document Server

Rochow, E G; Emeléus, H J; Nyholm, Ronald

1975-01-01

Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

Titan's fluvial valleys: Morphology, distribution, and spectral properties

Science.gov (United States)

Langhans, M.H.; Jaumann, R.; Stephan, K.; Brown, R.H.; Buratti, B.J.; Clark, R.N.; Baines, K.H.; Nicholson, P.D.; Lorenz, R.D.; Soderblom, L.A.; Soderblom, J.M.; Sotin, Christophe; Barnes, J.W.; Nelson, R.

2012-01-01

Titan's fluvial channels have been investigated based on data obtained by the Synthetic Aperture Radar (SAR) instrument and the Visible and Infrared Mapping Spectrometer (VIMS) onboard the Cassini spacecraft. In this paper, a database of fluvial features is created based on radar-SAR data aiming to unveil the distribution and the morphologic and spectral characteristics of valleys on Titan on a global scale. It will also study the spatial relations between fluvial valleys and Titan's geologic units and spectral surface units which have become accessible thanks to Cassini-VIMS data. Several distinct morphologic types of fluvial valleys can be discerned by SAR-images. Dendritic valley networks appear to have much in common with terrestrial dendritic systems owing to a hierarchical and tree-shaped arrangement of the tributaries which is indicative of an origin from precipitation. Dry valleys constitute another class of valleys resembling terrestrial wadis, an indication of episodic and strong flow events. Other valley types, such as putative canyons, cannot be correlated with rainfall based on their morphology alone, since it cannot be ruled out that they may have originated from volcanic/tectonic action or groundwater sapping. Highly developed and complex fluvial networks with channel lengths of up to 1200 km and widths of up to 10 km are concentrated only at a few locations whereas single valleys are scattered over all latitudes. Fluvial valleys are frequently found in mountainous areas. Some terrains, such as equatorial dune fields and undifferentiated plains at mid-latitudes, are almost entirely free of valleys. Spectrally, fluvial terrains are often characterized by a high reflectance in each of Titan's atmospheric windows, as most of them are located on Titan's bright 'continents'. Nevertheless, valleys are spatially associated with a surface unit appearing blue due to its higher reflection at 1.3??m in a VIMS false color RGB composite with R: 1.59/1.27??m, G: 2

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

International Nuclear Information System (INIS)

Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

2015-01-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-10-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Groundwater quality in Coachella Valley, California

Science.gov (United States)

Dawson, Barbara J. Milby; Belitz, Kenneth

2012-01-01

Groundwater provides more than 40 percent of California’s drinking water. To protect this vital resource, the State of California created the Groundwater Ambient Monitoring and Assessment (GAMA) Program. The Priority Basin Project of the GAMA Program provides a comprehensive assessment of the State’s groundwater quality and increases public access to groundwater-quality information. Coachella Valley is one of the study areas being evaluated. The Coachella study area is approximately 820 square miles (2,124 square kilometers) and includes the Coachella Valley groundwater basin (California Department of Water Resources, 2003). Coachella Valley has an arid climate, with average annual rainfall of about 6 inches (15 centimeters). The runoff from the surrounding mountains drains to rivers that flow east and south out of the study area to the Salton Sea. Land use in the study area is approximately 67 percent (%) natural, 21% agricultural, and 12% urban. The primary natural land cover is shrubland. The largest urban areas are the cities of Indio and Palm Springs (2010 populations of 76,000 and 44,000, respectively). Groundwater in this basin is used for public and domestic water supply and for irrigation. The main water-bearing units are gravel, sand, silt, and clay derived from surrounding mountains. The primary aquifers in Coachella Valley are defined as those parts of the aquifers corresponding to the perforated intervals of wells listed in the California Department of Public Health database. Public-supply wells in Coachella Valley are completed to depths between 490 and 900 feet (149 to 274 meters), consist of solid casing from the land surface to a depth of 260 to 510 feet (79 to 155 meters), and are screened or perforated below the solid casing. Recharge to the groundwater system is primarily runoff from the surrounding mountains, and by direct infiltration of irrigation. The primary sources of discharge are pumping wells, evapotranspiration, and underflow to

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Hydrogen in amorphous silicon

International Nuclear Information System (INIS)

Peercy, P.S.

1980-01-01

The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

A convenient way of manufacturing silicon nanotubes on a silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

2016-07-01

A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Biofunctionalization of silicone rubber with microgroove-patterned surface and carbon-ion implantation to enhance biocompatibility and reduce capsule formation

Directory of Open Access Journals (Sweden)

Lei ZY

2016-10-01

Full Text Available Ze-yuan Lei, Ting Liu, Wei-juan Li, Xiao-hua Shi, Dong-li Fan Department of Plastic and Cosmetic Surgery, XinQiao Hospital, The Third Military Medical University, ChongQing, People’s Republic of China Purpose: Silicone rubber implants have been widely used to repair soft tissue defects and deformities. However, poor biocompatibility can elicit capsule formation, usually resulting in prosthesis contracture and displacement in long-term usage. To overcome this problem, this study investigated the properties of silicone rubber materials with or without a microgroove-patterned surface and with or without carbon (C-ion implantation. Materials and methods: Atomic force microscopy, X-ray photoelectron spectroscopy, and a water contact angle test were used to characterize surface morphology and physicochemical properties. Cytocompatibility was investigated by a cell adhesion experiment, immunofluorescence staining, a Cell Counting Kit-8 assay, and scanning electron microscopy in vitro. Histocompatibility was evaluated by studying the inflammatory response and fiber capsule formation that developed after subcutaneous implantation in rats for 7 days, 15 days, and 30 days in vivo. Results: Parallel microgrooves were found on the surfaces of patterned silicone rubber (P-SR and patterned C-ion-implanted silicone rubber (PC-SR. Irregular larger peaks and deeper valleys were present on the surface of silicone rubber implanted with C ions (C-SR. The silicone rubber surfaces with microgroove patterns had stable physical and chemical properties and exhibited moderate hydrophobicity. PC-SR exhibited moderately increased dermal fibroblast cell adhesion and growth, and its surface microstructure promoted orderly cell growth. Histocompatibility experiments on animals showed that both the anti-inflammatory and antifibrosis properties of PC-SR were slightly better than those of the other materials, and there was also a lower capsular contracture rate and less

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

Science.gov (United States)

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

EPA Region 1 - Map Layers for Valley ID Tool (Hosted Feature Service)

Science.gov (United States)

The Valley Service Feature Layer hosts spatial data for EPA Region 1's Valley Identification Tool. These layers contain attribute information added by EPA R1 GIS Center to help identify populated valleys:- Fac_2011NEI: Pollution sources selected from the National Emissions Inventory (EPA, 2011).- NE_Towns_PopValleys: New England Town polygons (courtesy USGS), with Population in Valleys and Population Density in Valleys calculated by EPA R1 GIS, from 2010 US Census blocks. - VT_E911: Vermont residences (courtesy VT Center for Geographic Information E-911).

Valley photonic crystals for control of spin and topology

Energy Technology Data Exchange (ETDEWEB)

Dong, Jian-Wen; Chen, Xiao-Dong; Zhu, Hanyu; Wang, Yuan; Zhang, Xiang

2016-11-28

Photonic crystals offer unprecedented opportunity for light manipulation and applications in optical communication and sensing1,2,3,4. Exploration of topology in photonic crystals and metamaterials with non-zero gauge field has inspired a number of intriguing optical phenomena such as one-way transport and Weyl points5,6,7,8,9,10. Recently, a new degree of freedom, valley, has been demonstrated in two-dimensional materials11,12,13,14,15. Here, we propose a concept of valley photonic crystals with electromagnetic duality symmetry but broken inversion symmetry. We observe photonic valley Hall effect originating from valley-dependent spin-split bulk bands, even in topologically trivial photonic crystals. Valley–spin locking behaviour results in selective net spin flow inside bulk valley photonic crystals. We also show the independent control of valley and topology in a single system that has been long pursued in electronic systems, resulting in topologically-protected flat edge states. Valley photonic crystals not only offer a route towards the observation of non-trivial states, but also open the way for device applications in integrated photonics and information processing using spin-dependent transportation.

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Directory of Open Access Journals (Sweden)

V. А. Pilipenko

2017-01-01

Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

Silicon microphotonic waveguides

International Nuclear Information System (INIS)

Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

2004-01-01

Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

Breathing Valley Fever

Centers for Disease Control (CDC) Podcasts

2014-02-04

Dr. Duc Vugia, chief of the Infectious Diseases Branch in the California Department of Public Health, discusses Valley Fever.  Created: 2/4/2014 by National Center for Emerging and Zoonotic Infectious Diseases (NCEZID).   Date Released: 2/5/2014.

Groundwater-flow and land-subsidence model of Antelope Valley, California

Science.gov (United States)

Siade, Adam J.; Nishikawa, Tracy; Rewis, Diane L.; Martin, Peter; Phillips, Steven P.

2014-01-01

Antelope Valley, California, is a topographically closed basin in the western part of the Mojave Desert, about 50 miles northeast of Los Angeles. The Antelope Valley groundwater basin is about 940 square miles and is separated from the northern part of Antelope Valley by faults and low-lying hills. Prior to 1972, groundwater provided more than 90 percent of the total water supply in the valley; since 1972, it has provided between 50 and 90 percent. Most groundwater pumping in the valley occurs in the Antelope Valley groundwater basin, which includes the rapidly growing cities of Lancaster and Palmdale. Groundwater-level declines of more than 270 feet in some parts of the groundwater basin have resulted in an increase in pumping lifts, reduced well efficiency, and land subsidence of more than 6 feet in some areas. Future urban growth and limits on the supply of imported water may increase reliance on groundwater.

Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field.

Science.gov (United States)

Zhao, Chuan; Norden, Tenzin; Zhang, Peiyao; Zhao, Puqin; Cheng, Yingchun; Sun, Fan; Parry, James P; Taheri, Payam; Wang, Jieqiong; Yang, Yihang; Scrace, Thomas; Kang, Kaifei; Yang, Sen; Miao, Guo-Xing; Sabirianov, Renat; Kioseoglou, George; Huang, Wei; Petrou, Athos; Zeng, Hao

2017-08-01

Exploiting the valley degree of freedom to store and manipulate information provides a novel paradigm for future electronics. A monolayer transition-metal dichalcogenide (TMDC) with a broken inversion symmetry possesses two degenerate yet inequivalent valleys, which offers unique opportunities for valley control through the helicity of light. Lifting the valley degeneracy by Zeeman splitting has been demonstrated recently, which may enable valley control by a magnetic field. However, the realized valley splitting is modest (∼0.2 meV T -1 ). Here we show greatly enhanced valley spitting in monolayer WSe 2 , utilizing the interfacial magnetic exchange field (MEF) from a ferromagnetic EuS substrate. A valley splitting of 2.5 meV is demonstrated at 1 T by magnetoreflectance measurements and corresponds to an effective exchange field of ∼12 T. Moreover, the splitting follows the magnetization of EuS, a hallmark of the MEF. Utilizing the MEF of a magnetic insulator can induce magnetic order and valley and spin polarization in TMDCs, which may enable valleytronic and quantum-computing applications.

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

Science.gov (United States)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Quaternary glaciation of the Tashkurgan Valley, Southeast Pamir

Science.gov (United States)

Owen, Lewis A.; Chen, Jie; Hedrick, Kathyrn A.; Caffee, Marc W.; Robinson, Alexander C.; Schoenbohm, Lindsay M.; Yuan, Zhaode; Li, Wenqiao; Imrecke, Daniel B.; Liu, Jinfeng

2012-07-01

The Quaternary glacial history of Tashkurgan valley, in the transition between the Pamir and Karakoram, in Xinjiang Province, China was examined using remote sensing, field mapping, geomorphic analysis of landforms and sediments, and 10Be terrestrial cosmogenic nuclide dating. Moraines were assigned to four glacial stages: 1) the Dabudaer glacial stage that dates to the penultimate glacial cycle and/or earlier, and may represent one or more glaciations; 2) the Tashkurgan glacial stage that dates to early last glacial, most likely Marine Oxygen Isotope Stage (MIS) 4; 3) the Hangdi glacial stage that dates to MIS 2, possibly early MIS 2; and 4) the Kuzigun glacial stage that dates to the MIS 2, possibly the global Last Glacial Maximum, and is younger than the Hangdi glacial stage. Younger moraines and rock glaciers are present at the heads of tributary valleys; but these were inaccessible because they are located close to politically sensitive borders with Pakistan, Afghanistan and Tajikistan. Glaciers during the Dabudaer glacial stage advanced into the central part of the Tashkurgan valley. During the Tashkurgan glacial stages, glaciers advanced several kilometers beyond the mouths of the tributary valleys into the Tashkurgan valley. Glaciers during the Hangdi and Kuzigun glacial stages advanced just beyond the mouths of the tributary valleys. Glaciation in this part of the Himalayan-Tibetan orogen is likely strongly controlled by northern hemisphere climate oscillations, although a monsoonal influence on glaciation cannot be ruled out entirely.

Potential hydrologic characterization wells in Amargosa Valley

International Nuclear Information System (INIS)

Lyles, B.; Mihevc, T.

1994-09-01

More than 500 domestic, agricultural, and monitoring wells were identified in the Amargosa Valley. From this list, 80 wells were identified as potential hydrologic characterization wells, in support of the US Department of Energy (DOE) Underground Test Area/Remedial Investigation and Feasibility Study (UGTA/RIFS). Previous hydrogeologic studies have shown that groundwater flow in the basin is complex and that aquifers may have little lateral continuity. Wells located more than 10 km or so from the Nevada Test Site (NTS) boundary may yield data that are difficult to correlate to sources from the NTS. Also, monitoring well locations should be chosen within the guidelines of a hydrologic conceptual model and monitoring plan. Since these do not exist at this time, recompletion recommendations will be restricted to wells relatively close (approximately 20 km) to the NTS boundary. Recompletion recommendations were made for two abandoned agricultural irrigation wells near the town of Amargosa Valley (previously Lathrop Wells), for two abandoned wildcat oil wells about 10 km southwest of Amargosa Valley, and for Test Well 5 (TW-5), about 10 km east of Amargosa Valley

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

MX Siting Investigation. Gravity Survey - Sevier Desert Valley, Utah.

Science.gov (United States)

1981-01-24

Cheyenne, Wyoming. DMAHTC reduces the data to Simple Bouguer Anomaly (see Section A1.4, Appendix Al.0). The Defense Mapping Agency Aerospace Center...Desert Valley, Utah ......... 2 2 Topographic Setting - Sevier Desert Valley, Utah . 3 LIST OF DRAWINGS Drawing Number 1 Complete Bouguer Anomaly...gravity stations were distributed throughout the valley at an approxi- mate interval of 1.4 miles (2.3 km). Drawing 1 is a Complete Bouguer Anomaly

Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

OpenAIRE

Wong , S Chien; Ramkissoon , Yashin D; Lopez , Mauricio; Page , Kristopher; Parkin , Ivan P; Sullivan , Paul M

2009-01-01

Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

Single-Event Effects in Silicon and Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Sutter Buttes-the lone volcano in California's Great Valley

Science.gov (United States)

Hausback, Brain P.; Muffler, L.J. Patrick; Clynne, Michael A.

2011-01-01

The volcanic spires of the Sutter Buttes tower 2,000 feet above the farms and fields of California's Great Valley, just 50 miles north-northwest of Sacramento and 11 miles northwest of Yuba City. The only volcano within the valley, the Buttes consist of a central core of volcanic domes surrounded by a large apron of fragmental volcanic debris. Eruptions at the Sutter Buttes occurred in early Pleistocene time, 1.6 to 1.4 million years ago. The Sutter Buttes are not part of the Cascade Range of volcanoes to the north, but instead are related to the volcanoes in the Coast Ranges to the west in the vicinity of Clear Lake, Napa Valley, and Sonoma Valley.

Gravity and magnetic data of Midway Valley, southwest Nevada

International Nuclear Information System (INIS)

Ponce, D.A.; Langenheim, V.E.; Sikora, R.F.

1993-01-01

Detailed gravity and ground magnetic data collected along five traverses across Midway Valley on the eastern flank of Yucca Mountain in southwest Nevada are described. These data were collected as part of an effort to evaluate faulting in the vicinity of proposed surface facilities for a potential nuclear waste repository at Yucca Mountain. Geophysical data show that Midway Valley is bounded by large gravity and magnetic anomalies associated with the Bow Ridge and Paintbrush Canyon faults, on the west side of Exile Hill and on the west flank of Fran Ridge, respectively. In addition, Midway Valley itself is characterized by a number of small-amplitude anomalies that probably reflect small-scale faulting beneath Midway Valley

27 CFR 9.208 - Snake River Valley.

Science.gov (United States)

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Snake River Valley. 9.208... Snake River Valley. (a) Name. The name of the viticultural area described in this section is “Snake River Valley”. For purposes of part 4 of this chapter, “Snake River Valley” is a term of viticultural...

Subglacial tunnel valleys in the Alpine foreland: an example from Bern, Switzerland

International Nuclear Information System (INIS)

Duerst Stucki, M.; Reber, R.; Schlunegger, F.

2010-01-01

The morphology of the Alpine and adjacent landscapes is directly related to glacial erosion and associated sediment transport. Here we report the effects of glacio-hydrologic erosion on bedrock topography in the Swiss Plateau. Specifically, we identify the presence of subsurface valleys beneath the city of Bern and discuss their genesis. Stratigraphic investigations of more than 4'000 borehole data within a 430 km 2 -large area reveal the presence of a network of >200 m-deep and 1'000 m-wide valleys. They are flat floored with steep sided walls and are filled by Quaternary glacial deposits. The central valley beneath Bern is straight and oriented towards the NNW, with valley flanks more than 20 o steep. The valley bottom has an irregular undulating profile along the thalweg, with differences between sills and hollows higher than 50-100 m over a reach of 4 km length. Approximately 500 m high bedrock highlands flank the valley network. The highlands are dissected by up to 80 m-deep and 500 m-broad hanging valleys that currently drain away from the axis of the main valley. We interpret the valleys beneath the city of Bern to be a tunnel valley network which originated from subglacial erosion by melt water. The highland valleys served as proglacial meltwater paths and are hanging with respect to the trunk system, indicating that these incipient highland systems as well as the main gorge beneath Bern formed by glacial melt water under pressure. (authors)

Gate-tunable valley-spin filtering in silicene with magnetic barrier

Energy Technology Data Exchange (ETDEWEB)

Wu, X. Q., E-mail: xianqiangzhe@126.com [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Meng, H. [School of Physics and Telecommunication Engineering, Shanxi University of Technology, Hanzhong 723001 (China)

2015-05-28

We theoretically study the valley- and spin-resolved scattering through magnetic barrier in a one layer thick silicene, using the mode-matching method for the Dirac equation. We show that the spin-valley filtering effect can be achieved and can also be tuned completely through both a top and bottom gate. Moreover, when reversing the sign of the staggered potential, we find the direction of the valley polarization is switched while the direction of spin polarization is unchanged. These results can provide some meaningful information to design valley valve residing on silicene.

VALDRIFT 1.0: A valley atmospheric dispersion model with deposition

Energy Technology Data Exchange (ETDEWEB)

Allwine, K.J.; Bian, X.; Whiteman, C.D.

1995-05-01

VALDRIFT version 1.0 is an atmospheric transport and diffusion model for use in well-defined mountain valleys. It is designed to determine the extent of ddft from aedal pesticide spraying activities, but can also be applied to estimate the transport and diffusion of various air pollutants in valleys. The model is phenomenological -- that is, the dominant meteorological processes goveming the behavior of the valley atmosphere are formulated explicitly in the model, albeit in a highly parameterized fashion. The key meteorological processes treated are: (1) nonsteady and nonhomogeneous along-valley winds and turbulent diffusivities, (2) convective boundary layer growth, (3) inversion descent, (4) noctumal temperature inversion breakup, and (5) subsidence. The model is applicable under relatively cloud-free, undisturbed synoptic conditions and is configured to operate through one diumal cycle for a single valley. The inputs required are the valley topographical characteristics, pesticide release rate as a function of time and space, along-valley wind speed as a function of time and space, temperature inversion characteristics at sunrise, and sensible heat flux as a function of time following sunrise. Default values are provided for certain inputs in the absence of detailed observations. The outputs are three-dimensional air concentration and ground-level deposition fields as a function of time.

Porous Silicon Nanowires

Science.gov (United States)

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Valley-selective optical Stark effect probed by Kerr rotation

Science.gov (United States)

LaMountain, Trevor; Bergeron, Hadallia; Balla, Itamar; Stanev, Teodor K.; Hersam, Mark C.; Stern, Nathaniel P.

2018-01-01

The ability to monitor and control distinct states is at the heart of emerging quantum technologies. The valley pseudospin in transition metal dichalcogenide (TMDC) monolayers is a promising degree of freedom for such control, with the optical Stark effect allowing for valley-selective manipulation of energy levels in WS2 and WSe2 using ultrafast optical pulses. Despite these advances, understanding of valley-sensitive optical Stark shifts in TMDCs has been limited by reflectance-based detection methods where the signal is small and prone to background effects. More sensitive polarization-based spectroscopy is required to better probe ultrafast Stark shifts for all-optical manipulation of valley energy levels. Here, we show time-resolved Kerr rotation to be a more sensitive probe of the valley-selective optical Stark effect in monolayer TMDCs. Compared to the established time-resolved reflectance methods, Kerr rotation is less sensitive to background effects. Kerr rotation provides a fivefold improvement in the signal-to-noise ratio of the Stark effect optical signal and a more precise estimate of the energy shift. This increased sensitivity allows for observation of an optical Stark shift in monolayer MoS2 that exhibits both valley and energy selectivity, demonstrating the promise of this method for investigating this effect in other layered materials and heterostructures.

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Science.gov (United States)

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Silicon: electrochemistry and luminescence

NARCIS (Netherlands)

Kooij, Ernst Stefan

1997-01-01

The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

Institute of Scientific and Technical Information of China (English)

LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

2004-01-01

The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

Four newly recorded species of Dryopteridaceae from Kashmir valley, India

Directory of Open Access Journals (Sweden)

SHAKOOR AHMAD MIR

2014-04-01

Full Text Available Mir SA, Mishra AK, Reshi ZA, Sharma MP. 2014. Four newly recorded species of Dryopteridaceae from Kashmir valley, India. Biodiversitas 15: 6-11. Habitat diversity, elevation, cloud cover, rainfall, seasonal and temperature variations have created many ideal sites for the luxuriant growth of pteridophytes in the Kashmir valley, yet all the regions of the valley have not been surveyed. In Kashmir valley the family Dryopteridaceae is represented by 31 species. During the recent extensive field surveys of Shopian district four more species viz., Dryopteris caroli-hopei Fraser-Jenkins, Dryopteris blanfordii subsp. nigrosquamosa (Ching Fraser-Jenkins, Dryopteris pulvinulifera (Bedd. Kuntze and Polystichum Nepalense (Spreng C. Chr. have been recorded for the first time from the valley. The taxonomic description, synonyms, distribution and photographs of each species are given in this article.

Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

International Nuclear Information System (INIS)

Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

2015-01-01

Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

Ventilation potential during the emissions survey in Toluca Valley, Mexico

Science.gov (United States)

Ruiz Angulo, A.; Peralta, O.; Jurado, O. E.; Ortinez, A.; Grutter de la Mora, M.; Rivera, C.; Gutierrez, W.; Gonzalez, E.

2017-12-01

During the late-spring early-summer measurements of emissions and pollutants were carried out during a survey campaign at four different locations within the Toluca Valley. The current emissions inventory typically estimates the generation of pollutants based on pre-estimated values representing an entire sector function of their activities. However, those factors are not always based direct measurements. The emissions from the Toluca Valley are rather large and they could affect the air quality of Mexico City Valley. The air masses interchange between those two valleys is not very well understood; however, based on the measurements obtained during the 3 months campaign we looked carefully at the daily variability of the wind finding a clear signal for mountain-valley breeze. The ventilation coefficient is estimated and the correlations with the concentrations at the 4 locations and in a far away station in Mexico City are addressed in this work. Finally, we discuss the implication of the ventilation capacity in air quality for the system of Valleys that include Mexico City.

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Sahraoui

2015-04-09

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Saharoui; Mughal, Asad Jahangir

2015-01-01

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching

International Nuclear Information System (INIS)

Timokhov, D. F.; Timokhov, F. P.

2009-01-01

Possible ways for increasing the photoluminescence quantum yield of porous silicon layers have been investigated. The effect of the anodization parameters on the photoluminescence properties for porous silicon layers formed on silicon substrates with different crystallographic orientations was studied. The average diameters for silicon nanoclusters are calculated from the photoluminescence spectra of porous silicon. The influence of the substrate crystallographic orientation on the photoluminescence quantum yield of porous silicon is revealed. A model explaining the effect of the substrate orientation on the photoluminescence properties for the porous silicon layers formed by anode electrochemical etching is proposed.

Fitness-valley crossing with generalized parent-offspring transmission.

Science.gov (United States)

Osmond, Matthew M; Otto, Sarah P

2015-11-01

Simple and ubiquitous gene interactions create rugged fitness landscapes composed of coadapted gene complexes separated by "valleys" of low fitness. Crossing such fitness valleys allows a population to escape suboptimal local fitness peaks to become better adapted. This is the premise of Sewall Wright's shifting balance process. Here we generalize the theory of fitness-valley crossing in the two-locus, bi-allelic case by allowing bias in parent-offspring transmission. This generalization extends the existing mathematical framework to genetic systems with segregation distortion and uniparental inheritance. Our results are also flexible enough to provide insight into shifts between alternate stable states in cultural systems with "transmission valleys". Using a semi-deterministic analysis and a stochastic diffusion approximation, we focus on the limiting step in valley crossing: the first appearance of the genotype on the new fitness peak whose lineage will eventually fix. We then apply our results to specific cases of segregation distortion, uniparental inheritance, and cultural transmission. Segregation distortion favouring mutant alleles facilitates crossing most when recombination and mutation are rare, i.e., scenarios where crossing is otherwise unlikely. Interactions with more mutable genes (e.g., uniparental inherited cytoplasmic elements) substantially reduce crossing times. Despite component traits being passed on poorly in the previous cultural background, small advantages in the transmission of a new combination of cultural traits can greatly facilitate a cultural transition. While peak shifts are unlikely under many of the common assumptions of population genetic theory, relaxing some of these assumptions can promote fitness-valley crossing. Copyright © 2015 Elsevier Inc. All rights reserved.

Joining elements of silicon carbide

International Nuclear Information System (INIS)

Olson, B.A.

1979-01-01

A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

Subglacial tunnel valleys in the Alpine foreland: an example from Bern, Switzerland

Energy Technology Data Exchange (ETDEWEB)

Duerst Stucki, M.; Reber, R.; Schlunegger, F.

2010-12-15

The morphology of the Alpine and adjacent landscapes is directly related to glacial erosion and associated sediment transport. Here we report the effects of glacio-hydrologic erosion on bedrock topography in the Swiss Plateau. Specifically, we identify the presence of subsurface valleys beneath the city of Bern and discuss their genesis. Stratigraphic investigations of more than 4'000 borehole data within a 430 km{sup 2}-large area reveal the presence of a network of >200 m-deep and 1'000 m-wide valleys. They are flat floored with steep sided walls and are filled by Quaternary glacial deposits. The central valley beneath Bern is straight and oriented towards the NNW, with valley flanks more than 20 {sup o} steep. The valley bottom has an irregular undulating profile along the thalweg, with differences between sills and hollows higher than 50-100 m over a reach of 4 km length. Approximately 500 m high bedrock highlands flank the valley network. The highlands are dissected by up to 80 m-deep and 500 m-broad hanging valleys that currently drain away from the axis of the main valley. We interpret the valleys beneath the city of Bern to be a tunnel valley network which originated from subglacial erosion by melt water. The highland valleys served as proglacial meltwater paths and are hanging with respect to the trunk system, indicating that these incipient highland systems as well as the main gorge beneath Bern formed by glacial melt water under pressure. (authors)

Ozone Laminae and Their Entrainment Into a Valley Boundary Layer, as Observed From a Mountaintop Monitoring Station, Ozonesondes, and Aircraft Over California's San Joaquin Valley

Science.gov (United States)

Faloona, I. C.; Conley, S. A.; Caputi, D.; Trousdell, J.; Chiao, S.; Eiserloh, A. J., Jr.; Clark, J.; Iraci, L. T.; Yates, E. L.; Marrero, J. E.; Ryoo, J. M.; McNamara, M. E.

2016-12-01

The San Joaquin Valley of California is wide ( 75 km) and long ( 400 km), and is situated under strong atmospheric subsidence due, in part, to the proximity of the midlatitude anticyclone of the Pacific High. The capping effect of this subsidence is especially prominent during the warm season when ground level ozone is a serious air quality concern across the region. While relatively clean marine boundary layer air is primarily funneled into the valley below the strong subsidence inversion at significant gaps in the upwind Coast Range mountains, airflow aloft also spills over these barriers and mixes into the valley from above. Because this transmountain flow occurs under the influence of synoptic subsidence it tends to present discrete, laminar sheets of differing air composition above the valley boundary layer. Meanwhile, although the boundary layers tend to remain shallow due to the prevailing subsidence, orographic and anabatic venting of valley boundary layer air around the basin whips up a complex admixture of regional air masses into a "buffer layer" just above the boundary layer (zi) and below the lower free troposphere. We present scalar data of widely varying lifetimes including ozone, methane, NOx, and thermodynamic observations from upwind and within the San Joaquin Valley to better explain this layering and its subsequent erosion into the valley boundary layer via entrainment. Data collected at a mountaintop monitoring station on Chews Ridge in the Coast Range, by coastal ozonesondes, and aircraft are analyzed to document the dynamic layering processes around the complex terrain surrounding the valley. Particular emphasis will be made on observational methods whereby distal ozone can be distinguished from the regional ozone to better understand the influence of exogenous sources on air quality in the valley.

Geomorphological hazards in Swat valley, Pakistan

International Nuclear Information System (INIS)

Usman, A.

1999-01-01

This study attempts to describe, interpret and analyze, in depth, the varied geomorphological hazards and their impacts prevailing in the swat valley locate in the northern hilly and mountainous regions of Pakistan. The hills and mountains re zones of high geomorphological activity with rapid rates of weathering, active tectonic activities, abundant precipitation, rapid runoff and heavy sediment transport. Due to the varied topography, lithology, steep slope, erodible soil, heavy winter snowfall and intensive rainfall in the spring and summer seasons, several kinds of geomorphological hazards, such as geomorphic gravitational hazards, Fluvial hazards, Glacial hazards, Geo tectonic hazards, are occurring frequently in swat valley. Amongst them, geomorphic gravitational hazards, such as rock fall rock slide, debris slide mud flow avalanches, are major hazards in mountains and hills while fluvial hazards and sedimentation are mainly confined to the alluvial plain and lowlands of the valley. The Getechtonic hazards, on the other hand, have wide spread distribution in the valley the magnitude and occurrence of each king of hazard is thus, varied according to intensity of process and physical geographic environment. This paper discusses the type distribution and damage due to the various geomorphological hazards and their reduction treatments. The study would to be of particular importance and interest to both natural and social scientists, as well as planner, environmentalists and decision-makers for successful developmental interventions in the region. (author)

A new Proposal to Mexico Valley Zonification

Science.gov (United States)

Flores-Estrella, H. C.; Yussim, S.; Lomnitz, C.

2004-12-01

The effects of the Michoacan earthquake (19th September, 1985, Mw 8.1) in Mexico City caused a significant change in the political, social and scientific history, as it was considered the worst seismic disaster ever lived in Mexico. Since then, numerous efforts have been made to understand and determine the parameters that caused the special features registered. One of these efforts had began on 1960 with the work by Marsal and Masari, who published the Mexico Valley seismological and geotechnical zonification (1969), based on gravimetric and shallow borehole data. In this work, we present a revision of the studies that proposed the zonification, a description of the valley geology, and basing on it we propose a new zonification for Mexico Valley.

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

International Nuclear Information System (INIS)

Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

2014-01-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

Hydrological responses to channelization and the formation of valley plugs and shoals

Science.gov (United States)

Pierce, Aaron R.; King, Sammy L.

2017-01-01

Rehabilitation of floodplain systems focuses on restoring interactions between the fluvial system and floodplain, however, there is a paucity of information on the effects of valley plugs and shoals on floodplain hydrological processes. We investigated hydrologic regimes in floodplains at three valley plug sites, two shoal sites, and three unchannelized sites. Valley plug sites had altered surface and sub-surface hydrology relative to unchannelized sites, while only sub-surface hydrology was affected at shoal sites. Some of the changes were unexpected, such as reduced flood duration and flood depth in floodplains associated with valley plugs. Our results emphasize the variability associated with hydrologic processes around valley plugs and our rudimentary understanding of the effects associated with these geomorphic features. Water table levels were lower at valley plug sites compared to unchannelized sites, however, valley plug sites had a greater proportion of days when water table inundation was above mean root collar depth than both shoal and unchannelized sites as a result of lower root collar depths and higher deposition rates. This study has provided evidence that valley plugs can affect both surface and sub-surface hydrology in different ways than previously thought and illustrates the variability in hydrological responses to valley plug formation.

Applying Rapid Acquisition Policy Lessons for Defense Innovation

Science.gov (United States)

2017-12-21

import- ing Silicon Valley- style innovation practices to its acquisition process, it is im- portant to assess an organization’s ability to...these efforts. Keywords: defense acquisition, defense procurement, rapid acquisition, de- fense innovation, program management , organizational culture...Device De- feat Organization, JIEDDO, Rapid Equipping Force, REF Silicon Valley- style innovation is a hot topic in the Department of De-fense (DOD). For

Use of porous silicon to minimize oxidation induced stacking fault defects in silicon

International Nuclear Information System (INIS)

Shieh, S.Y.; Evans, J.W.

1992-01-01

This paper presents methods for minimizing stacking fault defects, generated during oxidation of silicon, include damaging the back of the wafer or depositing poly-silicon on the back. In either case a highly defective structure is created and this is capable of gettering either self-interstitials or impurities which promote nucleation of stacking fault defects. A novel method of minimizing these defects is to form a patch of porous silicon on the back of the wafer by electrochemical etching. Annealing under inert gas prior to oxidation may then result in the necessary gettering. Experiments were carried out in which wafers were subjected to this treatment. Subsequent to oxidation, the wafers were etched to remove oxide and reveal defects. The regions of the wafer adjacent to the porous silicon patch were defect-free, whereas remote regions had defects. Deep level transient spectroscopy has been used to examine the gettering capability of porous silicon, and the paper discusses the mechanism by which the porous silicon getters

The California Valley grassland

Science.gov (United States)

Keeley, J.E.; Schoenherr, Allan A.

1990-01-01

Grasslands are distributed throughout California from Oregon to Baja California Norte and from the coast to the desert (Brown 1982) (Figure 1). This review will focus on the dominant formation in cismontane California, a community referred to as Valley Grassland (Munz 1959). Today, Valley Grassland is dominated by non-native annual grasses in genera such as Avena (wild oat), Bromus (brome grass), and Hordeum (barley), and is often referred to as the California annual grassland. On localized sites, native perennial bunchgrasses such as Stipa pultra (purple needle grass) may dominate and such sites are interpreted to be remnants of the pristine valley grassland. In northwestern California a floristically distinct formation of the Valley Grassland, known as Coast Prairie (Munz 1959) or Northern Coastal Grassland (Holland and Keil 1989) is recognized. The dominant grasses include many native perennial bunchgrasses in genera such as Agrostis, Calamagrostis, Danthonia, Deschampsia, Festuca, Koeleria and Poa (Heady et al. 1977). Non-native annuals do not dominate, but on some sites non-native perennials like Anthoxanthum odoratum may colonize the native grassland (Foin and Hektner 1986). Elevationally, California's grasslands extend from sea level to at leas 1500 m. The upper boundary is vague because montane grassland formations are commonly referred to as meadows; a community which Munz (1959) does not recognize. Holland and Keil (1989) describe the montane meadow as an azonal community; that is, a community restricted not so much to a particular climatic zone but rather controlled by substrate characteristics. They consider poor soil-drainage an over-riding factor in the development of montane meadows and, in contrast to grasslands, meadows often remain green through the summer drought. Floristically, meadows are composed of graminoids; Cyperaceae, Juncaceae, and rhizomatous grasses such as Agropyron (wheat grass). Some bunchgrasses, such as Muhlenbergia rigens, are

Indentation fatigue in silicon nitride, alumina and silicon carbide ...

Indian Academy of Sciences (India)

Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

Silicon web process development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

1981-01-01

The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

International Nuclear Information System (INIS)

Hezel, R.; Streb, W.

1985-01-01

Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

Groundwater quality in the Antelope Valley, California

Science.gov (United States)

Dawson, Barbara J. Milby; Belitz, Kenneth

2012-01-01

Groundwater provides more than 40 percent of California’s drinking water. To protect this vital resource, the State of California created the Groundwater Ambient Monitoring and Assessment (GAMA) Program. The Priority Basin Project of the GAMA Program provides a comprehensive assessment of the State’s groundwater quality and increases public access to groundwater-quality information. Antelope Valley is one of the study areas being evaluated. The Antelope study area is approximately 1,600 square miles (4,144 square kilometers) and includes the Antelope Valley groundwater basin (California Department of Water Resources, 2003). Antelope Valley has an arid climate and is part of the Mojave Desert. Average annual rainfall is about 6 inches (15 centimeters). The study area has internal drainage, with runoff from the surrounding mountains draining towards dry lakebeds in the lower parts of the valley. Land use in the study area is approximately 68 percent (%) natural (mostly shrubland and grassland), 24% agricultural, and 8% urban. The primary crops are pasture and hay. The largest urban areas are the cities of Palmdale and Lancaster (2010 populations of 152,000 and 156,000, respectively). Groundwater in this basin is used for public and domestic water supply and for irrigation. The main water-bearing units are gravel, sand, silt, and clay derived from surrounding mountains. The primary aquifers in Antelope Valley are defined as those parts of the aquifers corresponding to the perforated intervals of wells listed in the California Department of Public Health database. Public-supply wells in Antelope Valley are completed to depths between 360 and 700 feet (110 to 213 meters), consist of solid casing from the land surface to a depth of 180 to 350 feet (55 to 107 meters), and are screened or perforated below the solid casing. Recharge to the groundwater system is primarily runoff from the surrounding mountains, and by direct infiltration of irrigation and sewer and septic

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed

2014-07-29

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

2014-01-01

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

DEFF Research Database (Denmark)

Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

2015-01-01

An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

The Health Valley: Global Entrepreneurial Dynamics.

Science.gov (United States)

Dubuis, Benoit

2014-12-01

In the space of a decade, the Lake Geneva region has become the Health Valley, a world-class laboratory for discovering and developing healthcare of the future. Through visionary individuals and thanks to exceptional infrastructure this region has become one of the most dynamic in the field of innovation, including leading scientific research and exceptional actors for the commercialization of academic innovation to industrial applications that will improve the lives of patients and their families. Here follows the chronicle of a spectacular expansion into the Health Valley.

Selective formation of porous silicon

Science.gov (United States)

Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

OpenAIRE

K?nig, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusi...

Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

2010-01-01

We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

Silicon photonics fundamentals and devices

CERN Document Server

Deen, M Jamal

2012-01-01

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

Twenty-fold plasmon-induced enhancement of radiative emission rate in silicon nanocrystals embedded in silicon dioxide

International Nuclear Information System (INIS)

Gardelis, S; Gianneta, V.; Nassiopoulou, A.G

2016-01-01

We report on a 20-fold enhancement of the integrated photoluminescence (PL) emission of silicon nanocrystals, embedded in a matrix of silicon dioxide, induced by excited surface plasmons from silver nanoparticles, which are located in the vicinity of the silicon nanocrystals and separated from them by a silicon dioxide layer of a few nanometers. The electric field enhancement provided by the excited surface plasmons increases the absorption cross section and the emission rate of the nearby silicon nanocrystals, resulting in the observed enhancement of the photoluminescence, mainly attributed to a 20-fold enhancement in the emission rate of the silicon nanocrystals. The observed remarkable improvement of the PL emission makes silicon nanocrystals very useful material for photonic, sensor and solar cell applications.

Biogeochemical studies of wintering waterfowl in the Imperial and Sacramento Valleys

Energy Technology Data Exchange (ETDEWEB)

Koranda, J.J.; Stuart, M.; Thompson, S.; Conrado, C.

1979-10-01

Trace and major elemental composition were determined in the organs of wintering waterfowl in the Imperial and Sacramento Valleys of California, and in soils, sediments, and agricultural fertilizer that constitute the various sources of elements in the waterfowl. These data provide a biogeochemical baseline for waterfowl populations wintering in an area being developed for geothermal power. This baseline in the Imperial Valley is affected by soil and sediment composition, agricultural effluents in irrigation and stream water, and spent shot deposited by hunters in waterfowl habitats. The waterfowl acquire a set of trace elements from these sources and concentrations increase in their organs over the wintering period. Nickel, arsenic, selenium, bromine, and lead are the primary elements acquired from soil sources, agricultural effluents, and spent shot in the Imperial Valley. The assessment of effects from geothermal effluents on waterfowl populations in complex because there are large influxes of materials into the Imperial Valley ecosystem that contain trace elements, i.e., irrigation water, phosphatic fertilizers, pesticides, and lead shot. Multiple sources exist for many elements prominent in the expected geothermal effluents. The relationships between the two California valleys, the Imperial and Sacramento, are apparent in the trace element concentrations in the organs of waterfowl obtained in those two valleys. Arsenic is absent in the waterfowl organs obtained in the Sacramento Valley and relatively common in the Imperial Valley waterfowl. The effect of any release of geothermal effluent in the Imperial Valley waterfowl habitats will be difficult to describe because of the complexity of the biogeochemical baseline and the multiple sources of trace and major elements in the ecosystem.

Goldstone-Apple Valley Radio Telescope System Theory of Operation

Science.gov (United States)

Stephan, George R.

1997-01-01

The purpose of this learning module is to enable learners to describe how the Goldstone-Apple Valley Radio Telescope (GAVRT) system functions in support of Apple Valley Science and Technology Center's (AVSTC) client schools' radio astronomy activities.

Summary of the engineering assessment of inactive uranium mill tailings: Monument Valley site, Monument Valley, Arizona

International Nuclear Information System (INIS)

1981-10-01

Ford, Bacon and Davis Utah Inc. has reevaluated the Monument Valley site in order to revise the March 1977 engineering assessment of the problems resulting from the existence of radioactive uranium mill tailings at Monument Valley, Arizona. This engineering assessment has included the preparation of topographic maps, the performance of core drillings and radiometric measurements sufficient to determine areas and volumes of tailings and radiation exposures of individuals and nearby populations, the investigations of site hydrology and meteorology, and the evaluation and costing of alternative corrective actions. Radon gas released from the 1.1 million tons of tailings at the Monument Valley site constitutes the most significant environmental impact, although windblown tailings and external gamma radiation also are factors. The four alternative actions presented in this engineering assessment range from millsite decontamination with the addition of 3 m of stabilization cover material to removal of the tailings to remote disposal sites and decontamination of the tailings site. Cost estimates for the four options range from about $6,600,000 for stabilization in-place, to about $15,900,000 for disposal at a distance of about 15 mi. Three principal alternatives for reprocessing the Monument Valley tailings were examined: heap leaching, treatment at an existing mill; and reprocessing at a new conventional mill constructed for tailings reprocessing. The cost of the uranium recovered would be more than $500/lb of U 3 O 8 by heap leach or conventional plant processes. The spot market price for uranium was $25/lb early in 1981. Therefore, reprocessing the tailings for uranium recovery is economically unattractive

Direct Production of Silicones From Sand

Energy Technology Data Exchange (ETDEWEB)

Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

2001-09-30

Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

Flexible Thermoelectric Generators on Silicon Fabric

KAUST Repository

Sevilla, Galo T.

2012-11-01

In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

Subwavelength silicon photonics

International Nuclear Information System (INIS)

Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

2011-01-01

With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

Topographic evolution of Yosemite Valley from Low Temperature Thermochronology

Science.gov (United States)

Tripathy-Lang, A.; Shuster, D. L.; Cuffey, K. M.; Fox, M.

2014-12-01

In this contribution, we interrogate the timing of km-scale topography development in the region around Yosemite Valley, California. Our goal is to determine when this spectacular glacial valley was carved, and how this might help address controversy surrounding the topographic evolution of the Sierra Nevada. At the scale of the range, two rival hypotheses are each supported by different datasets. Low-temperature thermochronology supports the idea that the range has been high-standing since the Cretaceous, whereas geomorphic evidence suggests that much of the elevation of the Sierra Nevada was attained during the Pliocene. Recent work by McPhillips and Brandon (2012) suggests instead that both ideas are valid, with the range losing much elevation during the Cenozoic, but regaining it during Miocene surface uplift.At the local scale, the classic study of Matthes (1930) determined that most of Yosemite Valley was excavated by the Sherwin-age glaciation that ended ~1 Ma. The consensus view is in agreement, although some argue that nearby comparable valleys comparable were carved long ago (e.g., House et al., 1998). If the Quaternary and younger glaciations were responsible for the bulk of the valley's >1 km depth, we might expect apatite (U-Th)/He ages at the valley floor to be histories at these locations, these data constrain patterns of valley topography development through time. We also supplement these data with zircon 4He/3He thermochronometry, which is a newly developed method that provides information on continuous cooling paths through ~120-220 °C. We will present both the apatite and zircon 4He/3He data and, in conjunction with thermo-kinematic modeling, discuss the ability and limitations of these data to test models of Sierra Nevada topography development through time. Matthes (1930) USGS Professional Paper House et al. (1998) Nature McPhillips and Brandon (2012) American Journal of Science

Optimal decentralized valley-filling charging strategy for electric vehicles

International Nuclear Information System (INIS)

Zhang, Kangkang; Xu, Liangfei; Ouyang, Minggao; Wang, Hewu; Lu, Languang; Li, Jianqiu; Li, Zhe

2014-01-01

Highlights: • An implementable charging strategy is developed for electric vehicles connected to a grid. • A two-dimensional pricing scheme is proposed to coordinate charging behaviors. • The strategy effectively works in decentralized way but achieves the systematic valley filling. • The strategy allows device-level charging autonomy, and does not require a bidirectional communication/control network. • The strategy can self-correct when confronted with adverse factors. - Abstract: Uncoordinated charging load of electric vehicles (EVs) increases the peak load of the power grid, thereby increasing the cost of electricity generation. The valley-filling charging scenario offers a cheaper alternative. This study proposes a novel decentralized valley-filling charging strategy, in which a day-ahead pricing scheme is designed by solving a minimum-cost optimization problem. The pricing scheme can be broadcasted to EV owners, and the individual charging behaviors can be indirectly coordinated. EV owners respond to the pricing scheme by autonomously optimizing their individual charge patterns. This device-level response induces a valley-filling effect in the grid at the system level. The proposed strategy offers three advantages: coordination (by the valley-filling effect), practicality (no requirement for a bidirectional communication/control network between the grid and EV owners), and autonomy (user control of EV charge patterns). The proposed strategy is validated in simulations of typical scenarios in Beijing, China. According to the results, the strategy (1) effectively achieves the valley-filling charging effect at 28% less generation cost than the uncoordinated charging strategy, (2) is robust to several potential affecters of the valley-filling effect, such as (system-level) inaccurate parameter estimation and (device-level) response capability and willingness (which cause less than 2% deviation in the minimal generation cost), and (3) is compatible with

Silicon photonic integration in telecommunications

Directory of Open Access Journals (Sweden)

Christopher Richard Doerr

2015-08-01

Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

Silicon microphones - a Danish perspective

DEFF Research Database (Denmark)

Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

1998-01-01

Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

Geothermal resource assessment of western San Luis Valley, Colorado

Energy Technology Data Exchange (ETDEWEB)

Zacharakis, Ted G.; Pearl, Richard Howard; Ringrose, Charles D.

1983-01-01

The Colorado Geological Survey initiated and carried out a fully integrated assessment program of the geothermal resource potential of the western San Luis Valley during 1979 and 1980. The San Luis Valley is a large intermontane basin located in southcentral Colorado. While thermal springs and wells are found throughout the Valley, the only thermal waters found along the western part of the Valley are found at Shaw Warm Springs which is a relatively unused spring located approximately 6 miles (9.66 km) north of Del Norte, Colorado. The waters at Shaws Warm Spring have a temperature of 86 F (30 C), a discharge of 40 gallons per minute and contain approximately 408 mg/l of total dissolved solids. The assessment program carried out din the western San Luis Valley consisted of: soil mercury geochemical surveys; geothermal gradient drilling; and dipole-dipole electrical resistivity traverses, Schlumberger soundings, Audio-magnetotelluric surveys, telluric surveys, and time-domain electro-magnetic soundings and seismic surveys. Shaw Warm Springs appears to be the only source of thermal waters along the western side of the Valley. From the various investigations conducted the springs appear to be fault controlled and is very limited in extent. Based on best evidence presently available estimates are presented on the size and extent of Shaw Warm Springs thermal system. It is estimated that this could have an areal extent of 0.63 sq. miles (1.62 sq. km) and contain 0.0148 Q's of heat energy.

Integrated silicon optoelectronics

CERN Document Server

Zimmermann, Horst

2000-01-01

'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

Valley-controlled propagation of pseudospin states in bulk metacrystal waveguides

Science.gov (United States)

Chen, Xiao-Dong; Deng, Wei-Min; Lu, Jin-Cheng; Dong, Jian-Wen

2018-05-01

Light manipulations such as spin-direction locking propagation, robust transport, quantum teleportation, and reconfigurable electromagnetic pathways have been investigated at the boundaries of photonic systems. Recently by breaking Dirac cones in time-reversal-invariant photonic crystals, valley-pseudospin coupled edge states have been employed to realize selective propagation of light. Here, we realize the controllable propagation of pseudospin states in three-dimensional bulk metacrystal waveguides by valley degree of freedom. Reconfigurable photonic valley Hall effect is achieved for frequency-direction locking propagation in such a way that the propagation path can be tunable precisely by scanning the working frequency. A complete transition diagram is illustrated on the valley-dependent pseudospin states of Dirac-cone-absent photonic bands. A photonic blocker is proposed by cascading two inversion asymmetric metacrystal waveguides in which pseudospin-direction locking propagation exists. In addition, valley-dependent pseudospin bands are also discussed in a realistic metamaterials sample. These results show an alternative way toward molding the pseudospin flow in photonic systems.

Valley-symmetric quasi-1D transport in ballistic graphene

Science.gov (United States)

Lee, Hu-Jong

We present our recent studies on gate-defined valley-symmetric one-dimensional (1D) carrier guiding in ballistic monolayer graphene and valley-symmetry-protected topological 1D transport in ballistic bilayer graphene. Successful carrier guiding was realized in ballistic monolayer graphene even in the absence of a band gap by inducing a high distinction ( more than two orders of magnitude) in the carrier density between the region of a quasi-1D channel and the rest of the top-gated regions. Conductance of a channel shows quantized values in units of 4e2/ h, suggesting that the valley symmetry is preserved. For the latter, the topological 1D conduction was realized between two closely arranged insulating regions with inverted band gaps, induced under a pair of split dual gating with polarities opposite to each other. The maximum conductance along the boundary channel showed 4e2/ h, again with the preserved valley symmetry. The 1D topological carrier guiding demonstrated in this study affords a promising route to robust valleytronic applications and sophisticated valley-associated functionalities based on 2D materials. This work was funded by the National Research Foundation of Korea.

Process for making silicon

Science.gov (United States)

Levin, Harry (Inventor)

1987-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Geohydrology and Water Quality of the Valley-Fill Aquifer System in the Upper Sixmile Creek and West Branch Owego Creek Valleys in the Town of Caroline, Tompkins County, New York

Science.gov (United States)

Miller, Todd S.

2009-01-01

In 2002, the U.S. Geological Survey, in cooperation with the Town of Caroline and Tompkins County Planning Department, began a study of the valley-fill aquifer system in upper Sixmile Creek and headwaters of West Branch Owego Creek valleys in the Town of Caroline, NY. The purpose of the study is to provide geohydrologic data to county and town planners as they develop a strategy to manage and protect their water resources. The first aquifer reach investigated in this series is in the Town of Caroline and includes the upper Sixmile Creek valley and part of West Branch Owego Creek valley. The portions of the valley-fill aquifer system that are comprised of saturated coarse-grained sediments including medium to coarse sand and sandy gravel form the major aquifers. Confined sand and gravel units form the major aquifers in the western and central portions of the upper Sixmile Creek valley, and an unconfined sand and gravel unit forms the major aquifer in the eastern portion of the upper Sixmile Creek valley and in the headwaters of the West Branch Owego Creek valley. The valley-fill deposits are thinnest near the edges of the valley where they pinch out along the till-mantled bedrock valley walls. The thickness of the valley fill in the deepest part of the valley, at the western end of the study area, is about 100 feet (ft); the thickness is greater than 165 ft on top of the Valley Heads Moraine in the central part of the valley. An estimated 750 people live over and rely on groundwater from the valley-fill aquifers in upper Sixmile Creek and West Branch Owego Creek valleys. Most groundwater withdrawn from the valley-fill aquifers is pumped from wells with open-ended 6-inch diameter casings; the remaining withdrawals are from shallow dug wells or cisterns that collect groundwater that discharges to springs (especially in the Brooktondale area). The valley-fill aquifers are the sources of water for about 200 households, several apartment complexes, two mobile home parks

Silicon etch process

International Nuclear Information System (INIS)

Day, D.J.; White, J.C.

1984-01-01

A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

Porous silicon gettering

Energy Technology Data Exchange (ETDEWEB)

Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

Investigation of the interface region between a porous silicon layer and a silicon substrate

International Nuclear Information System (INIS)

Lee, Ki-Won; Park, Dae-Kyu; Kim, Young-You; Shin, Hyun-Joon

2005-01-01

Atomic force microscopy (AFM) measurement and X-ray diffraction (XRD) analysis were performed to investigate the physical and structural characteristics of the interface region between a porous silicon layer and a silicon substrate. We discovered that, when anodization time was increased under a constant current density, the Si crystallites in the interface region became larger and formed different lattice parameters than observed in the porous silicon layer. Secondary ion mass spectrometry (SIMS) analysis also revealed that the Si was more concentrated in the interface region than in the porous silicon layer. These results were interpreted by the deficiency of the HF solution in reaching to the interface through the pores during the porous silicon formation

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

Science.gov (United States)

Ferguson, Frank T.; Nuth, Joseph A., III

2012-01-01

The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals

KAUST Repository

Li, Hang; Wang, Xuhui; Manchon, Aurelien

2016-01-01

We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.

Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals

KAUST Repository

Li, Hang

2016-01-11

We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.

Speed and Agility: How Defense Acquisition Can Enable Innovation

Science.gov (United States)

2016-04-30

Accelerators such as Y Combinator enable speed to market via a defined schedule. Y Combinator alone funded over 1,000 startups with a combined valuation ...of over $65 billion. Rapid Acquisition Organizations Acquisition executives, policy-makers, and process owners can learn from both Silicon Valley ...traits and organizational culture of the successful organizations. DARPA, Silicon Valley , and many other government and commercial organizations have

High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

International Nuclear Information System (INIS)

McNallan, M.

1993-01-01

Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

RBS/channeling analysis of hydrogen-implanted single crystals of FZ silicon and 6H silicon

International Nuclear Information System (INIS)

Irwin, R.B.

1984-01-01

Single crystals of FZ silicon and 6H silicon carbide were implanted with hydrogen ions (50 and 80 keV, respectively) to fluences from 2 x 10 16 H + /cm 2 to 2 x 10 18 H+/cm 2 . The implantations were carried out at three temperatures: approx.95K, 300 K, and approx.800 K. Swelling of the samples was measured by surface profilometry. RBS/channeling was used to obtain the damage profiles and to determine the amount of hydrogen retained in the lattice. The damage profiles are centered around X/sub m/ for the implants into silicon and around R/sub p/ for silicon carbide. For silicon carbide implanted at 95 K and 300 K and for silicon implanted at 95 K, the peak damage region is amorphous for fluences above 8 x 10 16 H + /cm 2 , 4 x 10 17 H + /cm 2 , and 2 x 10 17 H + /cm 2 , respectively. Silicon implanted at 300 and 800 K and silicon carbide implanted at 800 K remain crystalline up to fluences of 1 x 10 18 H + /cm 2 . The channeling damage results agree with previously reported TEM and electron diffraction data. The predictions of a simple disorder-accumulation model with a linear annealing term explains qualitatively the observed damage profiles in silicon carbide. Quantitatively, however, the model predicts faster development of the damage profiles than is observed at low fluences in both silicon and silicon carbide. For samples implanted at 300 and 800 K, the model also predicts substantially less peak disorder than is observed. The effect of the surface, the retained hydrogen, the shape of S/sub D/(X), and the need for a nonlinear annealing term may be responsible for the discrepancy

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

International Nuclear Information System (INIS)

Kukushkin, S A; Osipov, A V

2017-01-01

The paper focuses on the study of transformation of silicon crystal into silicon carbide crystal via substitution reaction with carbon monoxide gas. As an example, the Si(1 0 0) surface is considered. The cross section of the potential energy surface of the first stage of transformation along the reaction pathway is calculated by the method of nudged elastic bands. It is found that in addition to intermediate states associated with adsorption of CO and SiO molecules on the surface, there is also an intermediate state in which all the atoms are strongly bonded to each other. This intermediate state significantly reduces the activation barrier of transformation down to 2.6 eV. The single imaginary frequencies corresponding to the two transition states of this transformation are calculated, one of which is reactant-like, whereas the other is product-like. By methods of quantum chemistry of solids, the second stage of this transformation is described, namely, the transformation of precarbide silicon into silicon carbide. Energy reduction per one cell is calculated for this ‘collapse’ process, and bond breaking energy is also found. Hence, it is concluded that the smallest size of the collapsing islet is 30 nm. It is shown that the chemical bonds of the initial silicon crystal are coordinately replaced by the bonds between Si and C in silicon carbide, which leads to a high quality of epitaxy and a low concentration of misfit dislocations. (paper)

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Nanostructured silicon for thermoelectric

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2011-06-01

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

West Valley Demonstration Project, West Valley, New York: Annual report

International Nuclear Information System (INIS)

1989-01-01

Under the West Valley Demonstration Project Act, Public Law 96-368, liquid high-level radioactive waste stored at the Western New York Nuclear Services Center, West Valley, New York, that resulted from spent nuclear fuel reprocessing operations conducted between 1966 and 1972, is to be solidified in borosilicate glass and transported to a federal repository for geologic disposal. A major milestone was reached in May 1988 when the Project began reducing the volume of the liquid high-level waste. By the end of 1988, approximately 15 percent of the initial inventory had been processed into two waste streams. The decontaminated low-level liquid waste is being solidified in cement. The high-level waste stream is being stored in an underground tank pending its incorporation into borosilicate glass. Four tests of the waste glass melter system were completed. These tests confirmed equipment operability, control system reliability, and provided samples of waste glass for durability testing. In mid-1988, the Department validated an integrated cost and schedule plan for activities required to complete the production of the waste borosilicate glass. Design of the radioactive Vitrification Facility continued

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

Science.gov (United States)

Singh, M.; Behrendt, D. R.

1992-01-01

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

1366 Project Silicon: Reclaiming US Silicon PV Leadership

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

2016-02-16

1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

Silicon-micromachined microchannel plates

CERN Document Server

Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

Medicinal plants of Usherai valley, Dir, NWFP, Pakistan

International Nuclear Information System (INIS)

Hazarat, A.; Shah, J.; Ahmad, S.; Nasir, M.; Jan, A.K.; Skindar

2010-01-01

This research is based on the results of an ethno-botanical research conducted in Usherai Valley. The main objective was to enlist the wealth of medicinal plants. In total 50 species, belonging to 32 families of wild herbs, shrubs and trees were found to be used as medicinal plants by the inhabitants in the valley. (author)

AIR POLLUTION FEATURES OF THE VALLEY-BASED TOWNS IN HUNGARY

Directory of Open Access Journals (Sweden)

Z. UTASI

2016-03-01

Full Text Available There are 30 valley-based towns with >10,000 inhabitants in Hungary, filled by 1.023 million people i.e. 10 % of the population. Two criteria are used to define the valley-based town. They are: (i Vertical difference between the lowest point in the town and the highest one around it should be >100 m. At the same time, (ii the same difference on the opposite side should be >50 m. Air pollution data by the National Air Pollution Observation Network are used. Five contaminants were selected and analysed for 2007, 2010 and 2013. Due to a sharp reduction in the network, we could find data for a small part of the valley-based towns. Control towns with equal air-quality observations and similar cumulative number of inhabitants were also selected. The contaminants and the number of the settlements are: NO2 manual (14 valley-based vs. 2x14 control, NO2 automatic (8 vs. 8, SO2 automatic (7 vs. 2x6, PM10 automatic (8 vs. 2x7 and PM10 deposition manual (6 vs. 8. Average values, as well as high concentration episodes (>98%thresholds are equally analysed and evaluated. The main conclusion is that there are so big differences between the years both in absolute values and relative sequence of valley-based and control groups that the analysed there years is not enough to make any final conclusion. For step-over frequencies, however valley-based towns have some advantage, possibly due to the valley-hill wind system.

Porous silicon carbide (SIC) semiconductor device

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Silicon Photonics Cloud (SiCloud)

DEFF Research Database (Denmark)

DeVore, P. T. S.; Jiang, Y.; Lynch, M.

2015-01-01

Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

Debris Flow Occurrence and Sediment Persistence, Upper Colorado River Valley, CO.

Science.gov (United States)

Grimsley, K J; Rathburn, S L; Friedman, J M; Mangano, J F

2016-07-01

Debris flow magnitudes and frequencies are compared across the Upper Colorado River valley to assess influences on debris flow occurrence and to evaluate valley geometry effects on sediment persistence. Dendrochronology, field mapping, and aerial photographic analysis are used to evaluate whether a 19th century earthen, water-conveyance ditch has altered the regime of debris flow occurrence in the Colorado River headwaters. Identifying any shifts in disturbance processes or changes in magnitudes and frequencies of occurrence is fundamental to establishing the historical range of variability (HRV) at the site. We found no substantial difference in frequency of debris flows cataloged at eleven sites of deposition between the east (8) and west (11) sides of the Colorado River valley over the last century, but four of the five largest debris flows originated on the west side of the valley in association with the earthen ditch, while the fifth is on a steep hillslope of hydrothermally altered rock on the east side. These results suggest that the ditch has altered the regime of debris flow activity in the Colorado River headwaters as compared to HRV by increasing the frequency of debris flows large enough to reach the Colorado River valley. Valley confinement is a dominant control on response to debris flows, influencing volumes of aggradation and persistence of debris flow deposits. Large, frequent debris flows, exceeding HRV, create persistent effects due to valley geometry and geomorphic setting conducive to sediment storage that are easily delineated by valley confinement ratios which are useful to land managers.

The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

International Nuclear Information System (INIS)

Colder, H.; Marie, P.; Gourbilleau, F.

2008-01-01

Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

Method of forming buried oxide layers in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Effects of ion implantation on charges in the silicon--silicon dioxide system

International Nuclear Information System (INIS)

Learn, A.J.; Hess, D.W.

1977-01-01

Structures consisting of thermally grown oxide on silicon were implanted with boron, arsenic, or argon ions. For argon implantation through oxides, an increased fixed oxide charge (Q/sub ss/) was observed with the increase being greater for than for silicon. This effect is attributed to oxygen recoil which produces additional excess ionized silicon in the oxide of a type similar to that arising in thermal oxidation. Fast surface state (N/sub st/) generation was also noted which in most cases obscured the Q/sub ss/ increase. Of various heat treatments tested, only a 900 degreeC anneal in hydrogen annihilated N/sub st/ and allowed Q/sub ss/ measurement. Such N/sub st/ apparently arises as a consequence of implantation damage at the silicon--silicon dioxide interface. With the exception of boron implantations into thick oxides or through aluminum electrodes, reduction of the mobile ionic charge (Q/sub o/) was achieved by implantation. The reduction again is presumably damage related and is not negated by high-temperature annealing but may be counterbalanced by aluminum incorporation in the oxide

Groundwater quality in the Owens Valley, California

Science.gov (United States)

Dawson, Barbara J. Milby; Belitz, Kenneth

2012-01-01

Groundwater provides more than 40 percent of California’s drinking water. To protect this vital resource, the State of California created the Groundwater Ambient Monitoring and Assessment (GAMA) Program. The Priority Basin Project of the GAMA Program provides a comprehensive assessment of the State’s groundwater quality and increases public access to groundwater-quality information. Owens Valley is one of the study areas being evaluated. The Owens study area is approximately 1,030 square miles (2,668 square kilometers) and includes the Owens Valley groundwater basin (California Department of Water Resources, 2003). Owens Valley has a semiarid to arid climate, with average annual rainfall of about 6 inches (15 centimeters). The study area has internal drainage, with runoff primarily from the Sierra Nevada draining east to the Owens River, which flows south to Owens Lake dry lakebed at the southern end of the valley. Beginning in the early 1900s, the City of Los Angeles began diverting the flow of the Owens River to the Los Angeles Aqueduct, resulting in the evaporation of Owens Lake and the formation of the current Owens Lake dry lakebed. Land use in the study area is approximately 94 percent (%) natural, 5% agricultural, and 1% urban. The primary natural land cover is shrubland. The largest urban area is the city of Bishop (2010 population of 4,000). Groundwater in this basin is used for public and domestic water supply and for irrigation. The main water-bearing units are gravel, sand, silt, and clay derived from surrounding mountains. Recharge to the groundwater system is primarily runoff from the Sierra Nevada, and by direct infiltration of irrigation. The primary sources of discharge are pumping wells, evapotranspiration, and underflow to the Owens Lake dry lakebed. The primary aquifers in Owens Valley are defined as those parts of the aquifers corresponding to the perforated intervals of wells listed in the California Department of Public Health database

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

Energy Technology Data Exchange (ETDEWEB)

Antoniadis, H.

2011-03-01

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Silicon-micromachined microchannel plates

International Nuclear Information System (INIS)

Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

2000-01-01

Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

Removal of inclusions from silicon

Science.gov (United States)

Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

2009-11-01

The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

Silicon Tracking Upgrade at CDF

International Nuclear Information System (INIS)

Kruse, M.C.

1998-04-01

The Collider Detector at Fermilab (CDF) is scheduled to begin recording data from Run II of the Fermilab Tevatron in early 2000. The silicon tracking upgrade constitutes both the upgrade to the CDF silicon vertex detector (SVX II) and the new Intermediate Silicon Layers (ISL) located at radii just beyond the SVX II. Here we review the design and prototyping of all aspects of these detectors including mechanical design, data acquisition, and a trigger based on silicon tracking

Ground water in Fountain and Jimmy Camp Valleys, El Paso County, Colorado with a section on Computations of drawdowns caused by the pumping of wells in Fountain Valley

Science.gov (United States)

Jenkins, Edward D.; Glover, Robert E.

1964-01-01

The part of Fountain Valley considered in this report extends from Colorado Springs to the Pueblo County line. It is 23 miles long and has an area of 26 square miles. The part of Jimmy Camp Valley discussed is 11 miles long and has an area of 9 square miles. The topography is characterized by level flood plains and alluvial terraces that parallel the valley and by rather steep hills along the valley sides. The climate is semiarid, average annual precipitation being about 13 inches. Farming and stock raising are the principal occupations in the valleys; however, some of the agricultural land near Colorado Springs is being used for housing developments. The Pierre Shale and alluvium underlie most of the area, and mesa gravel caps the shale hills adjacent to Fountain Valley. The alluvium yields water to domestic, stock, irrigation, and public-supply wells and is capable of yielding large quantities of water for intermittent periods. Several springs issue along the sides of the valley at the contact of the mesa gravel and the underlying Pierre Shale. The water table ranges in depth from less than 10 feet along the bottom lands to about 80 feet along the sides of the valleys; the saturated thickness ranges from less than a foot to about 50 feet. The ground-water reservoir in Fountain Valley is recharged by precipitation that falls within the area, by percolation from Fountain Creek, which originates in the Pikes Peak, Monument Valley, and Rampart Range areas, and by seepage from irrigation water. This reservoir contains about 70,000 acre-feet of ground water in storage. The ground-water reservoir in Jimmy Camp Valley is recharged from precipitation that falls within the area, by percolation from Jimmy Camp Creek during periods of streamflow, and by seepage from irrigation water. The Jimmy Camp ground-water reservoir contains about 25,000 acre-feet of water in storage. Ground water is discharged from the area by movement to the south, by evaporation and transpiration in

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

Valley-chiral quantum Hall state in graphene superlattice structure

Science.gov (United States)

Tian, H. Y.; Tao, W. W.; Wang, J.; Cui, Y. H.; Xu, N.; Huang, B. B.; Luo, G. X.; Hao, Y. H.

2016-05-01

We theoretically investigate the quantum Hall effect in a graphene superlattice (GS) system, in which the two valleys of graphene are coupled together. In the presence of a perpendicular magnetic field, an ordinary quantum Hall effect is found with the sequence σxy=ν e^2/h(ν=0,+/-1,+/-2,\\cdots) . At the zeroth Hall platform, a valley-chiral Hall state stemming from the single K or K' valley is found and it is localized only on one sample boundary contributing to the longitudinal conductance but not to the Hall conductivity. Our findings may shed light on the graphene-based valleytronics applications.

Silicon Alloying On Aluminium Based Alloy Surface

International Nuclear Information System (INIS)

Suryanto

2002-01-01

Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

Commercial production of ethanol in the San Luis Valley, Colorado. Final report

Energy Technology Data Exchange (ETDEWEB)

Hewlett, E.M.; Erickson, M.V.; Ferguson, C.D.; Boswell, B.S.; Walter, K.M.; Hart, M.L.; Sherwood, P.B.

1983-07-01

The commercial feasibility of producing between 76 and 189 million liters (20 to 50 million gallons) of ethanol annually in the San Luis Valley, Colorado using geothermal energy as the primary heat source was assessed. The San Luis Valley is located in south-central Colorado. The valley is a high basin situated approximately 2316 meters (7600 feet) above sea level which contains numerous warm water wells and springs. A known geothermal resource area (IGRA) is located in the east-central area of the valley. The main industry in the valley is agriculture, while the main industry in the surrounding mountains is lumber. Both of these industries can provide feedstocks for the production of ethanol.

Cryostratigraphy and sedimentology of high-Arctic fjord-valleys

OpenAIRE

Gilbert, Graham Lewis

2018-01-01

Fjord-valleys, as sediment-filled palaeofjords, are characteristic of formerly glaciated mountainous coastal areas. High-Arctic fjord-valleys commonly host permafrost, but are poorly accessible and hence have drawn relatively little research. The research presented in this thesis combines the methods of cryostratigraphy, clastic sedimentology, sequence stratigraphy, geomorphology and geochronology to investigate the sedimentary infilling, permafrost formation and late Quaternary landscape dev...

Silicon microfabricated beam expander

Science.gov (United States)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-03-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Silicon germanium as a novel mask for silicon deep reactive ion etching

KAUST Repository

Serry, Mohamed Y.

2013-10-01

This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

Structural modification of silicon during the formation process of porous silicon

International Nuclear Information System (INIS)

Martin-Palma, R.J.; Pascual, L.; Landa-Canovas, A.R.; Herrero, P.; Martinez-Duart, J.M.

2005-01-01

Direct examination of porous silicon (PS) by the use of high resolution transmission electron microscopy (HRTEM) allowed us to perform a deep insight into the formation mechanisms of this material. In particular, the structure of the PS/Si interface and that of the silicon nanocrystals that compose porous silicon were analyzed in detail. Furthermore, image processing was used to study in detail the structure of PS. The mechanism of PS formation and lattice matching between the PS layer and the Si substrate is analyzed and discussed. Finally, a formation mechanism for PS based on the experimental observations is proposed

Development of low cost silicon solar cells by reusing the silicon saw dust collected during wafering process

International Nuclear Information System (INIS)

Zaidi, Z.I.; Raza, B.; Ahmed, M.; Sheikh, H.; Qazi, I.A.

2002-01-01

Silicon material due to its abundance in nature and maximum conversion efficiency has been successfully being used for the fabrication of electronic and photovoltaic devices such as ICs, diodes, transistors and solar cells. The 80% of the semiconductor industry is ruled by silicon material. Single crystal silicon solar cells are in use for both space and terrestrial application, due to the well developed technology and better efficiency than polycrystalline and amorphous silicon solar cells. The current research work is an attempt to reduce the cost of single crystal silicon solar cells by reusing the silicon saw dust obtained during the watering process. During the watering process about 45% Si material is wasted in the form of Si powder dust. Various waste powder silicon samples were analyzed using inductively Coupled Plasma (ICP) technique, for metallic impurities critical for solar grade silicon material. The results were evaluated from impurity and cost point of view. (author)

Eesti tervishoid - Euroopa punane latern / Marika Tuus

Index Scriptorium Estoniae

Tuus, Marika, 1951-

2005-01-01

Ilmunud ka: Nädaline 3. märts lk. 4, Elva Postipoiss 5. märts lk. 4, Valgamaalane 12. märts lk. 2, Hiiu Leht 8. apr. lk. 2. Autori sõnul on Eesti tervishoiu rahastamise poolest Euroopas viimasel kohal, kulutades selleks alla 5% SKP-st

Large tunable valley splitting in edge-free graphene quantum dots on boron nitride

Science.gov (United States)

Freitag, Nils M.; Reisch, Tobias; Chizhova, Larisa A.; Nemes-Incze, Péter; Holl, Christian; Woods, Colin R.; Gorbachev, Roman V.; Cao, Yang; Geim, Andre K.; Novoselov, Kostya S.; Burgdörfer, Joachim; Libisch, Florian; Morgenstern, Markus

2018-05-01

Coherent manipulation of the binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid-state systems, whereas exploitation of the valley has only recently been started, albeit without control at the single-electron level. Here, we show that van der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunnelling microscope and demonstrate valley splitting that is tunable from -5 to +10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts the range of controlled valley splitting by about one order of magnitude. The tunable inversion of spin and valley states should enable coherent superposition of these degrees of freedom as a first step towards graphene-based qubits.

Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

International Nuclear Information System (INIS)

Neamen, D.; Shedd, W.; Buchanan, B.

1975-01-01

The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 10 7 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si 3 N 4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si 3 N 4 are compared to results on similar devices with SiO 2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

Venture Capital and Strategic Investment for Developing Government Mission Capabilities

Science.gov (United States)

2014-01-01

Defense Venture Catalyst Initiative, Welcome to Defense Venture Catalyst Initiative, undated. 10 A. McBride, Pentagon Turns to Silicon Valley for Leads...negotiating valuation and other terms, such as profit participation, stock redemption rights, board membership, and voting rights. The manager will very...to be an agile, flexible commercial firm that could work on its own terms with firms in Silicon Valley and throughout the world.”4 Since inception

The silicon vertex tracker for star and future applications of silicon drift detectors

International Nuclear Information System (INIS)

Bellwied, Rene

2001-01-01

The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

Optoelectronic enhancement of monocrystalline silicon solar cells by porous silicon-assisted mechanical grooving

Energy Technology Data Exchange (ETDEWEB)

Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2011-03-15

One of the most important factors influencing silicon solar cells performances is the front side reflectivity. Consequently, new methods for efficient reduction of this reflectivity are searched. This has always been done by creating a rough surface that enables incident light of being absorbed within the solar cell. Combination of texturization-porous silicon surface treatment was found to be an attractive technical solution for lowering the reflectivity of monocrystalline silicon (c-Si). The texturization of the monocrystalline silicon wafer was carried out by means of mechanical grooving. A specific etching procedure was then applied to form a thin porous silicon layer enabling to remove mechanical damages. This simple and low cost method reduces the total reflectivity from 29% to 7% in the 300 - 950 nm wavelength range and enhances the diffusion length of the minority carriers from 100 {mu}m to 790 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The dark side of silicon energy efficient computing in the dark silicon era

CERN Document Server

Liljeberg, Pasi; Hemani, Ahmed; Jantsch, Axel; Tenhunen, Hannu

2017-01-01

This book presents the state-of-the art of one of the main concerns with microprocessors today, a phenomenon known as "dark silicon". Readers will learn how power constraints (both leakage and dynamic power) limit the extent to which large portions of a chip can be powered up at a given time, i.e. how much actual performance and functionality the microprocessor can provide. The authors describe their research toward the future of microprocessor development in the dark silicon era, covering a variety of important aspects of dark silicon-aware architectures including design, management, reliability, and test. Readers will benefit from specific recommendations for mitigating the dark silicon phenomenon, including energy-efficient, dedicated solutions and technologies to maximize the utilization and reliability of microprocessors. Enables readers to understand the dark silicon phenomenon and why it has emerged, including detailed analysis of its impacts; Presents state-of-the-art research, as well as tools for mi...

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Colloidal characterization of silicon nitride and silicon carbide

Science.gov (United States)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Silicon-to-silicon wafer bonding using evaporated glass

DEFF Research Database (Denmark)

Weichel, Steen; Reus, Roger De; Lindahl, M.

1998-01-01

Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

Elite silicon and solar power

International Nuclear Information System (INIS)

Yasamanov, N.A.

2000-01-01

The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

Porous silicon: X-rays sensitivity

International Nuclear Information System (INIS)

Gerstenmayer, J.L.; Vibert, Patrick; Mercier, Patrick; Rayer, Claude; Hyvernage, Michel; Herino, Roland; Bsiesy, Ahmad

1994-01-01

We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)? ((orig.))

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

Study of double porous silicon surfaces for enhancement of silicon solar cell performance

Science.gov (United States)

Razali, N. S. M.; Rahim, A. F. A.; Radzali, R.; Mahmood, A.

2017-09-01

In this work, design and simulation of double porous silicon surfaces for enhancement of silicon solar cell is carried out. Both single and double porous structures are constructed by using TCAD ATHENA and TCAD DEVEDIT tools of the SILVACO software respectively. After the structures were created, I-V characteristics and spectral response of the solar cell were extracted using ATLAS device simulator. Finally, the performance of the simulated double porous solar cell is compared with the performance of both single porous and bulk-Si solar cell. The results showed that double porous silicon solar cell exhibited 1.8% efficiency compared to 1.3% and 1.2% for single porous silicon and bulk-Si solar cell.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au [Environmental Futures Research Institute, Griffith University, Nathan 4111 (Australia); Wood, Barry [Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia 4072 (Australia)

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

International Nuclear Information System (INIS)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca; Wood, Barry

2016-01-01

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm"−"2 with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

Enhanced Raman scattering in porous silicon grating.

Science.gov (United States)

Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

2018-03-19

The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

Commercial production of ethanol in the San Luis Valley, Colorado. Final Report

Energy Technology Data Exchange (ETDEWEB)

Hewlett, E.M.; Erickson, M.V.; Ferguson, C.D.; Sherwood, P.B.; Boswell, B.S.; Walter, K.M.; Hart, M.L.

1983-07-01

The purpose of this study is to assess the commercial feasibility of producing between 76 and 189 million liters (20 and 50 million gallons) of ethanol annually in the San Luis Valley, Colorado using geothermal energy as the primary heat source. The San Luis Valley is located in south-central Colorado. The valley is a high basin situated approximately 2316 meters (7600 feet) above sea level which contains numerous warm water wells and springs. A known geothermal resource area (KGRA) is located in the east-central area of the valley. The main industry in the valley is agriculture, while the main industry in the surrounding mountains is lumber. Both of these industries can provide feedstock for the production of ethanol.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

Directory of Open Access Journals (Sweden)

Kae Dal Kwack

2011-01-01

Full Text Available A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Reduction of absorption loss in multicrystalline silicon via combination of mechanical grooving and porous silicon

Energy Technology Data Exchange (ETDEWEB)

Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2011-03-15

Surface texturing of silicon wafer is a key step to enhance light absorption and to improve the solar cell performances. While alkaline-texturing of single crystalline silicon wafers was well established, no efficient chemical solution has been successfully developed for multicrystalline silicon wafers. Thus, the use of alternative new methods for effective texturization of multicrystalline silicon is worth to be investigated. One of the promising texturing techniques of multicrystalline silicon wafers is the use of mechanical grooves. However, most often, physical damages occur during mechanical grooves of the wafer surface, which in turn require an additional step of wet processing-removal damage. Electrochemical surface treatment seems to be an adequate solution for removing mechanical damage throughout porous silicon formation. The topography of untreated and porous silicon-treated mechanically textured surface was investigated using scanning electron microscopy (SEM). As a result of the electrochemical surface treatment, the total reflectivity drops to about 5% in the 400-1000 nm wavelength range and the effective minority carrier diffusion length enhances from 190 {mu}m to about 230 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Laboratory course on silicon sensors

CERN Document Server

Crescio, E; Roe, S; Rudge, A

2003-01-01

The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

International Nuclear Information System (INIS)

Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

2000-01-01

Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

Ultrafast generation of pseudo-magnetic field for valley excitons in WSe2 monolayers

KAUST Repository

Kim, J.

2014-12-04

The valley pseudospin is a degree of freedom that emerges in atomically thin two-dimensional transition metal dichalcogenides (MX2). The capability to manipulate it, in analogy to the control of spin in spintronics, can open up exciting opportunities. Here, we demonstrate that an ultrafast and ultrahigh valley pseudo-magnetic field can be generated by using circularly polarized femtosecond pulses to selectively control the valley degree of freedom in monolayer MX2. Using ultrafast pump-probe spectroscopy, we observed a pure and valley-selective optical Stark effect in WSe2 monolayers from the nonresonant pump, resulting in an energy splitting of more than 10 milli-electron volts between the K and K′ valley exciton transitions. Our study opens up the possibility to coherently manipulate the valley polarization for quantum information applications.

Ultrafast generation of pseudo-magnetic field for valley excitons in WSe2 monolayers

KAUST Repository

Kim, J.; Hong, X.; Jin, C.; Shi, S.-F.; Chang, C.-Y. S.; Chiu, Ming-Hui; Li, Lain-Jong; Wang, F.

2014-01-01

The valley pseudospin is a degree of freedom that emerges in atomically thin two-dimensional transition metal dichalcogenides (MX2). The capability to manipulate it, in analogy to the control of spin in spintronics, can open up exciting opportunities. Here, we demonstrate that an ultrafast and ultrahigh valley pseudo-magnetic field can be generated by using circularly polarized femtosecond pulses to selectively control the valley degree of freedom in monolayer MX2. Using ultrafast pump-probe spectroscopy, we observed a pure and valley-selective optical Stark effect in WSe2 monolayers from the nonresonant pump, resulting in an energy splitting of more than 10 milli-electron volts between the K and K′ valley exciton transitions. Our study opens up the possibility to coherently manipulate the valley polarization for quantum information applications.

Silicon microfabricated beam expander

International Nuclear Information System (INIS)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-01-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

Silicon microfabricated beam expander

Energy Technology Data Exchange (ETDEWEB)

Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

2015-03-30

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

The lakes of the Jordan Rift Valley

International Nuclear Information System (INIS)

Gat, J.R.

2001-01-01

This paper presents a summary of the proceedings of a workshop on the Lakes of the Jordan Rift Valley that was held in conjunction with the CRP on The Use of Isotope Techniques in Lake Dynamics Investigations. The paper presents a review of the geological, hydrogeological and physical limnological setting of the lakes in the Jordan Rift Valley, Lake Hula, Lake Kinneret and the Dead Sea. This is complemented by a description of the isotope hydrology of the system that includes the use of a wide range of isotopes: oxygen-18, deuterium, tritium, carbon-14, carbon-13, chlorine isotopes, boron-11 and helium-3/4. Environmental isotope aspects of the salt balances of the lakes, their palaeolimnology and biogeochemical tracers are also presented. The scope of application of isotopic tracers is very broad and provides a clear insight into many aspects of the physical, chemical and biological limnology of the Rift Valley Lakes. (author)

Using silicon nanostructures for the improvement of silicon solar cells' efficiency

International Nuclear Information System (INIS)

Torre, J. de la; Bremond, G.; Lemiti, M.; Guillot, G.; Mur, P.; Buffet, N.

2006-01-01

Silicon nanostructures (ns-Si) show interesting optical and electrical properties as a result of the band gap widening caused by quantum confinement effects. Along with their potential utilization for silicon-based light emitters' fabrication, they could also represent an appealing option for the improvement of energy conversion efficiency in silicon-based solar cells whether by using their luminescence properties (photon down-conversion) or the excess photocurrent produced by an improved high-energy photon's absorption. In this work, we report on the morphological and optical studies of non-stoichiometric silica (SiO x ) and silicon nitride (SiN x ) layers containing silicon nanostructures (ns-Si) in view of their application for solar cell's efficiency improvement. The morphological studies of the samples performed by transmission electron microscopy (TEM) unambiguously show the presence of ns-Si in a crystalline form for high temperature-annealed SiO x layers and for low temperature deposition of SiN x layers. The photoluminescence emission (PL) shows a rather high efficiency in both kind of layers with an intensity of only a factor ∼ 100 lower than that of porous silicon (pi-Si). The photocurrent spectroscopy (PC) shows a significant increase of absorption at high photon energy excitation most probably related to photon absorption within ns-Si quantized states. Moreover, the absorption characteristics obtained from PC spectra show a good agreement with the PL emission states unambiguously demonstrating a same origin, related to Q-confined excitons within ns-Si. Finally, the major asset of this material is the possibility to incorporate it to solar cells manufacturing processing for an insignificant cost

West Valley Reprocessing Plant. Safety analysis plant, supplement 18

International Nuclear Information System (INIS)

1975-01-01

Supplement 18 contains the following additions to Appendix II--5.0 Geology and Seismology: Section 12 ''Seismic Investigations for Spent Fuel Reprocessing Facility at West Valley, New York,'' October 20, 1975, and Section 13 ''Earthquake Return Period Analysis at West Valley, New York, for Nuclear Fuel Services, Inc.'' November 5, 1975

Wind Regimes in Complex Terrain of the Great Valley of Eastern Tennessee

Energy Technology Data Exchange (ETDEWEB)

Birdwell, Kevin R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2011-05-01

This research was designed to provide an understanding of physical wind mechanisms within the complex terrain of the Great Valley of Eastern Tennessee to assess the impacts of regional air flow with regard to synoptic and mesoscale weather changes, wind direction shifts, and air quality. Meteorological data from 2008 2009 were analyzed from 13 meteorological sites along with associated upper level data. Up to 15 ancillary sites were used for reference. Two-step complete linkage and K-means cluster analyses, synoptic weather studies, and ambient meteorological comparisons were performed to generate hourly wind classifications. These wind regimes revealed seasonal variations of underlying physical wind mechanisms (forced channeled, vertically coupled, pressure-driven, and thermally-driven winds). Synoptic and ambient meteorological analysis (mixing depth, pressure gradient, pressure gradient ratio, atmospheric and surface stability) suggested up to 93% accuracy for the clustered results. Probabilistic prediction schemes of wind flow and wind class change were developed through characterization of flow change data and wind class succession. Data analysis revealed that wind flow in the Great Valley was dominated by forced channeled winds (45 67%) and vertically coupled flow (22 38%). Down-valley pressure-driven and thermally-driven winds also played significant roles (0 17% and 2 20%, respectively), usually accompanied by convergent wind patterns (15 20%) and large wind direction shifts, especially in the Central/Upper Great Valley. The behavior of most wind regimes was associated with detectable pressure differences between the Lower and Upper Great Valley. Mixing depth and synoptic pressure gradients were significant contributors to wind pattern behavior. Up to 15 wind classes and 10 sub-classes were identified in the Central Great Valley with 67 joined classes for the Great Valley at-large. Two-thirds of Great Valley at-large flow was defined by 12 classes. Winds

Size effects in many-valley fluctuations in semiconductors

International Nuclear Information System (INIS)

Sokolov, V.N.; Kochelap, V.A.

1995-08-01

We present the results of theoretical investigations of nonhomogeneous fluctuations in submicron active regions of many-valley semiconductors with equivalent valleys(Ge, Si-type), where the dimension 2d of the region is comparable to or less than the intervalley diffusion relaxation length L iv . It is shown that for arbitrary orientations of the valley axes (the crystal axes) with respect to lateral sample surfaces, the fluctuation spectra depend on the bias voltage applied to the layer in the region of weak nonheating electric fields. The new physical phenomenon is reported: the fluctuation spectra depend on the sample thickness, with 2d iv the suppression of fluctuations arises for fluctuation frequencies ω -1 iv , τ -1 iv is the characteristic intervalley relaxation time. (author). 43 refs, 5 figs

Silicon processing for photovoltaics II

CERN Document Server

Khattak, CP

2012-01-01

The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

Energy Band Gap Dependence of Valley Polarization of the Hexagonal Lattice

Science.gov (United States)

Ghalamkari, Kazu; Tatsumi, Yuki; Saito, Riichiro

2018-02-01

The origin of valley polarization of the hexagonal lattice is analytically discussed by tight binding method as a function of energy band gap. When the energy gap decreases to zero, the intensity of optical absorption becomes sharp as a function of k near the K (or K') point in the hexagonal Brillouin zone, while the peak intensity at the K (or K') point keeps constant with decreasing the energy gap. When the dipole vector as a function of k can have both real and imaginary parts that are perpendicular to each other in the k space, the valley polarization occurs. When the dipole vector has only real values by selecting a proper phase of wave functions, the valley polarization does not occur. The degree of the valley polarization may show a discrete change that can be relaxed to a continuous change of the degree of valley polarization when we consider the life time of photo-excited carrier.

Asymmetric valley-resolved beam splitting and incident modes in slanted graphene junctions

International Nuclear Information System (INIS)

Hsieh, S. H.; Chu, C. S.

2016-01-01

Electron injection into a graphene sheet through a slanted armchair graphene nanoribbon (AGNR) is investigated. An incident mode, or subband, in the AGNR is valley-unpolarized. Our attention is on the valley-resolved nature of the injected electron beams and its connection to the incident mode. It is known for a normal injection that an incident mode will split symmetrically into two valley-resolved beams of equal intensity. We show, in contrast, that slanted injections result in asymmetric valley-resolved beam splitting. The most asymmetric beam splitting cases, when one of the valley-resolved beams has basically disappeared, are found and the condition derived. This is shown not due to trigonal warping because it holds even in the low incident energy regime, as long as collimation allows. These most asymmetric beam splitting cases occur at energies within an energy interval near and include the subband edge of an incident mode. The physical picture is best illustrated by a projection of the slanted AGNR subband states onto that of the 2D graphene sheet. It follows that the disappearing of a valley-resolved beam coincides with the situation that the group velocities of the projected states in the corresponding valley are in backward directions

The Drentsche Aa valley system

International Nuclear Information System (INIS)

Gans, W. de.

1981-01-01

This thesis is composed of five papers concerned with Late Quaternary geology and geomorphology of the Aa valley system. The correlation and chronostratigraphic position of the layers have been established by radiocarbon dating. (Auth.)

Land Subsidence Caused by Groundwater Exploitation in Quetta Valley, Pakistan

Directory of Open Access Journals (Sweden)

Najeebullah Kakar

2016-12-01

Full Text Available Land subsidence is affecting several metropolitan cities in developing as well as developed countries around the world such as Nagoya (Japan, Shanghai (China, Venice (Italy and San Joaquin valley (United States. This phenomenon is attributed to natural as well as anthropogenic activities that include extensive groundwater withdrawals. Quetta is the largest city of Balochistan province in Pakistan. This valley is mostly dry and ground water is the major source for domestic and agricultural consumption. The unplanned use of ground water resources has led to the deterioration of water quality and quantity in the Quetta valley. Water shortage in the region was further aggravated by the drought during (1998-2004 that hit the area forcing people to migrate from rural to urban areas. Refugees from the war torn neighboring Afghanistan also contributed to rapid increase in population of Quetta valley that has increased from 0.26 million in 1975 to 3.0 million in 2016. The objective of this study was to measure the land subsidence in Quetta valley and identify the effects of groundwater withdrawals on land subsidence. To achieve this goal, data from five Global Positioning System (GPS stations were acquired and processed. Furthermore the groundwater decline data from 41 observation wells during 2010 to 2015 were calculated and compared with the land deformation. The results of this study revealed that the land of Quetta valley is subsiding from 30mm/y on the flanks to 120 mm/y in the central part. 1.5-5.0 m/y of groundwater level drop was recorded in the area where the rate of subsidence is highest. So the extensive groundwater withdrawals in Quetta valley is considered to be the driving force behind land subsidence.

Direct measurement of exciton valley coherence in monolayer WSe2

KAUST Repository

Hao, Kai; Moody, Galan; Wu, Fengcheng; Dass, Chandriker Kavir; Xu, Lixiang; Chen, Chang Hsiao; Sun, Liuyang; Li, Ming-yang; Li, Lain-Jong; MacDonald, Allan H.; Li, Xiaoqin

2016-01-01

In crystals, energy band extrema in momentum space can be identified by a valley index. The internal quantum degree of freedom associated with valley pseudospin indices can act as a useful information carrier, analogous to electronic charge

Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

NARCIS (Netherlands)

Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

2005-01-01

A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.

2010-06-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

2010-01-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Valley polarization in magnetically doped single-layer transition-metal dichalcogenides

KAUST Repository

Cheng, Yingchun

2014-04-28

We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.

Optically initialized robust valley-polarized holes in monolayer WSe2

KAUST Repository

Hsu, Wei-Ting; Chen, Yen-Lun; Chen, Chiang-Hsiao; Liu, Pang-Shiuan; Hou, Tuo-Hung; Li, Lain-Jong; Chang, Wen-Hao

2015-01-01

a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe2 can be initialized by optical pumping. Using time

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

Directory of Open Access Journals (Sweden)

Gammon P.M.

2017-01-01

Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

NARCIS (Netherlands)

Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

2007-01-01

The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

DEFF Research Database (Denmark)

Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

2004-01-01

Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

Process for forming a porous silicon member in a crystalline silicon member

Science.gov (United States)

Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

1999-01-01

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

Interaction of valleys and circulation patterns (CPs on spatial precipitation patterns in southern Germany

Directory of Open Access Journals (Sweden)

M. Liu

2013-11-01

Full Text Available Topography exerts influence on the spatial precipitation distribution over different scales, known typically at the large scale as the orographic effect, and at the small scale as the wind-drift rainfall (WDR effect. At the intermediate scale (1~10 km, which is characterized by secondary mountain valleys, topography also demonstrates some effect on the precipitation pattern. This paper investigates such intermediate-scale topographic effects on precipitation patterns, focusing on narrow-steep valleys in the complex terrain of southern Germany, based on the daily observations over a 48 yr period (1960~2007 from a high-density rain-gauge network covering two sub-areas, Baden-Wuerttemberg (BW and Bavaria (BY. Precipitation data at the valley and non-valley stations are compared under consideration of the daily general circulation patterns (CPs classified by a fuzzy rule-based algorithm. Scatter plots of precipitation against elevation demonstrate a different behavior of valley stations comparing to non-valley stations. A detailed study of the precipitation time series for selected station triplets, each consisting of a valley station, a mountain station and an open station have been investigated by statistical analysis with the Kolmogorov–Smirnov (KS test supplemented by the One-way analysis of variance (One-way ANOVA and a graphical comparison of the mean precipitation amounts. The results show an interaction of valley orientation and the direction of the CPs at the intermediate scale, i.e. when the valley is shielded from the CP which carries the precipitation, the precipitation amount within the valley is comparable to that on the mountain crest, and both larger than the precipitation at the open station. When the valley is open to the CP, the precipitation within the valley is similar to the open station but much less than that on the mountain. Such phenomenon where the precipitation is "blind" to the valleys at the intermediate scale

Spin-orbit coupling induced two-electron relaxation in silicon donor pairs

Science.gov (United States)

Song, Yang; Das Sarma, S.

2017-09-01

We unravel theoretically a key intrinsic relaxation mechanism among the low-lying singlet and triplet donor-pair states in silicon, an important element in the fast-developing field of spintronics and quantum computation. Despite the perceived weak spin-orbit coupling (SOC) in Si, we find that our discovered relaxation mechanism, combined with the electron-phonon and interdonor interactions, drives the transitions in the two-electron states over a large range of donor coupling regimes. The scaling of the relaxation rate with interdonor exchange interaction J goes from J5 to J4 at the low to high temperature limits. Our analytical study draws on the symmetry analysis over combined band, donor envelope, and valley configurations. It uncovers naturally the dependence on the donor-alignment direction and triplet spin orientation, and especially on the dominant SOC source from donor impurities. While a magnetic field is not necessary for this relaxation, unlike in the single-donor spin relaxation, we discuss the crossover behavior with increasing Zeeman energy in order to facilitate comparison with experiments.

Hybrid Integrated Platforms for Silicon Photonics

Science.gov (United States)

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Valley plugs, land use, and phytogeomorphic response: Chapter 14

Science.gov (United States)

Pierce, Aaron R.; King, Sammy L.; Shroder, John F.

2013-01-01

Anthropogenic alteration of fluvial systems can disrupt functional processes that provide valuable ecosystem services. Channelization alters fluvial parameters and the connectivity of river channels to their floodplains which is critical for productivity, nutrient cycling, flood control, and biodiversity. The effects of channelization can be exacerbated by local geology and land-use activities, resulting in dramatic geomorphic readjustments including the formation of valley plugs. Considerable variation in the response of abiotic processes, including surface hydrology, subsurface hydrology, and sedimentation dynamics, to channelization and the formation of valley plugs. Altered abiotic processes associated with these geomorphic features and readjustments influence biotic processes including species composition, abundance, and successional processes. Considerable interest exists for restoring altered fluvial systems and their floodplains because of their social and ecological importance. Understanding abiotic and biotic responses of channelization and valley-plug formation within the context of the watershed is essential to successful restoration. This chapter focuses on the primary causes of valley-plug formation, resulting fluvial-geomorphic responses, vegetation responses, and restoration and research needs for these systems.

Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

DEFF Research Database (Denmark)

Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron

2007-01-01

The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class...... in the silicon nanocrystal films is dominated by trapping at the Si/SiO2 interface states, occurring on a 1–100 ps time scale depending on particle size and hydrogen passivation......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...

Epitaxial growth of silicon for layer transfer

Science.gov (United States)

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Magnetoelectric control of valley and spin in a silicene nanoribbon modulated by the magnetic superlattices

Energy Technology Data Exchange (ETDEWEB)

An, Xing-Tao, E-mail: anxt@hku.hk

2015-03-20

The control of valley and spin degrees of freedom and the transport properties of electrons in a zigzag silicene nanoribbon modulated by the magnetic superlattices are investigated theoretically. Due to the valley–spin locking effect in silicene, the valley degree of freedom can be controlled by magnetic means. The valley or/and spin selection induced by the exchange field result in the perfect spin–valley filter and tunneling magnetoresistance effect in the double ferromagnetic barriers on the surface of the silicene nanoribbon. It is more interesting that there are valley-resolved minigaps and minibands in the zigzag silicene nanoribbon modulated by the magnetic superlattices which give rise to the periodically modulated spin (or/and valley) polarization and tunneling magnetoresistance. The results obtained may have certain practical significance in applications for future valleytronic and spintronic devices. - Highlights: • The valley can be controlled by a magnetic field in silicene. • The valley-resolved miniband transport is studied in the silicene superlattices. • There are the perfect spin–valley filter and tunneling magnetoresistance effect.

Silicon nanowire-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

2008-07-23

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

Silicon nanowire-based solar cells

International Nuclear Information System (INIS)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

2008-01-01

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

75 FR 48359 - Blackstone River Valley National Heritage Corridor Commission: Notice of Meeting

Science.gov (United States)

2010-08-10

... DEPARTMENT OF THE INTERIOR Office of the Secretary Blackstone River Valley National Heritage..., United States Code, that a meeting of the John H. Chafee Blackstone River Valley National Heritage..., Blackstone River Valley National Heritage Corridor Commission, One Depot Square, Woonsocket, RI 02895, Tel...

Silicon Qubits

Energy Technology Data Exchange (ETDEWEB)

Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2018-02-28

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

Rock-fall potential in the Yosemite Valley, California

Science.gov (United States)

Wieczorek, G.F.; Morrissey, M.M.; Iovine, Giulio; Godt, Jonathan

1999-01-01

We used two methods of estimating rock-fall potential in the Yosemite Valley, California based on (1) physical evidence of previous rock-fall travel, in which the potential extends to the base of the talus, and (2) theoretical potential energy considerations, in which the potential can extend beyond the base of the talus, herein referred to as the rock-fall shadow. Rock falls in the valley commonly range in size from individual boulders of less than 1 m3 to moderate-sized falls with volumes of about 100,000 m3. Larger rock falls exceeding 100,000 m3, referred to as rock avalanches, are considered to be much less likely to occur based on the relatively few prehistoric rock-fall avalanche deposits in the Yosemite Valley. Because the valley has steep walls and is relatively narrow, there are no areas that are absolutely safe from large rock avalanches. The map shows areas of rock-fall potential, but does not predict when or how frequently a rock fall will occur. Consequently, neither the hazard in terms of probability of a rock fall at any specific location, nor the risk to people or facilities to such events can be assessed from this map.

Study of Silicon Microstrip Detector Properties for the LHCb Silicon Tracker

CERN Document Server

Lois-Gómez, C; Vázquez-Regueiro, P

2006-01-01

The LHCb experiment, at present under construction at the Large Hadron Collider at CERN, has been designed to perform high-precision measurements of CP violating phenomena and rare decays in the B meson systems. The need of a good tracking performance and the high density of particles close to the beam pipe lead to the use of silicon microstrip detectors in a significant part of the LHCb tracking system. The Silicon Tracker (ST) will be built using p-on-n silicon detectors with strip pitches of approximately 200 $\\mu$m and readout strips up to 38 cm in length. This thesis describes the tests carried out on silicon microstrip detectors for the ST, starting from the characterization of different prototypes up to the final tests on the detectors that are being installed at CERN. The results can be divided in three main blocks. The first part comprises an exhaustive characterization of several prototype sensors selected as suitable candidates for the detector and was performed in order to decide some design param...

Radiation processing of temperate fruits of Kashmir valley

International Nuclear Information System (INIS)

Hussain, Peerzada R.; Meena, Raghuveer S.; Dar, Mohd A.; Wani, Ali M.

2011-01-01

Kashmir valley is famous for its temperate horticulture. Main temperate fruits grown commercially in the valley include apple, pear, peach, plum, cherry, strawberry and apricot. These fruits being perishable and susceptible to microbial spoilage, have a short shelf-life. The short shelf-life in an impediment in their transportation and marketing and results in huge losses. Study was carried out at NRL, Srinagar to investigate the effect of gamma irradiation on the keeping quality of most of these fruits. The effect of gamma irradiation alone and in combination with other techniques like controlled low temperature storage, edible polysaccharide coating and calcium chloride treatment was studied in detail. The results revealed that there is a great potential for the use of radiation in extending the storage life of most of the temperate fruits produced in the valley of Kashmir. (author)

Regolith transport in the Dry Valleys of Antarctica

Science.gov (United States)

Putkonen, J.; Rosales, M.; Turpen, N.; Morgan, D.; Balco, G.; Donaldson, M.

2007-01-01

The stability of ground surface and preservation of landforms that record past events and environments is of great importance as the geologic and climatic history is evaluated in the Dry Valleys of Antarctica. Currently little is known about the regolith transport that tends to eradicate and confound this record and regolith transport is itself an environmental indicator. Based on analyses of repeat photographs, soil traps, and pebble transport distances, it was found that there is a large spatial variation in topographic diffusivities at least in the annual basis and that counter intuitively the highest topographic diffusivities are found in the alpine valleys that are located farther inland from the coast where the lowest topographic diffusivities were recorded. An average topographic diffusivity for the Dry Valleys was determined to be 10M-5–10-4 m2

Diversity and ecological ranges of plant species from dry inter-Andean valleys

DEFF Research Database (Denmark)

Quintana, Catalina

found on steep slopes and in ravines. These areas of original dry valley vegetation preserve many wild relatives of cultivated plants on the one hand and old lineages of other wild plant groups. Dry inter-Andean valleys (DIAVs) in Ecuador therefore makeup a biodiversity hot spot for both plants......Dry valleys in the American Andes and other mountains have provided excellent agricultural lands since millennia. Besides agriculture, wood extraction and the establishment of urban areas have diminished the native vegetation of these valleys. Consequently the original vegetation is now mostly...... and animals, but unfortunately only very few botanical studies have been carried out in these areas. This thesis intends to shed light on the vegetation of the Dry Ecuadorean Inter-Andean Valleys in four chapters, each with a different focus. 1) A review paper that summarizes all scientific knowledge...

Apparatus for making molten silicon

Science.gov (United States)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Hole Injection at the Silicon/Aqueous Electrolyte Interface: A Possible Mechanism for Chemiluminescence from Porous Silicon

NARCIS (Netherlands)

Kooij, Ernst S.; Butter, K.; Kelly, J.J.

1998-01-01

The reduction mechanism of oxidizing agents at silicon and porous silicon electrodes has been investigated in relation to light emission from the porous semiconductor. Oxidizing agents with a positive redox potential are shown to inject holes into HF-pretreated silicon. However, as the degree of

Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

International Nuclear Information System (INIS)

Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

2015-01-01

Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

75 FR 17756 - Blackstone River Valley National Heritage Corridor Commission: Notice of Meeting

Science.gov (United States)

2010-04-07

... DEPARTMENT OF THE INTERIOR Office of the Secretary Blackstone River Valley National Heritage..., United States Code, that a meeting of the John H. Chafee Blackstone River Valley National Heritage... the meeting to: Jan H. Reitsma, Executive Director, John H. Chafee, Blackstone River Valley National...

Advances in silicon nanophotonics

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Pu, Minhao

Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

West Valley Demonstration Project Annual Site Environmental Report Calendar Year 2004

Energy Technology Data Exchange (ETDEWEB)

West Valley Nuclear Services Company (WVNSCO) and URS Group, Inc.

2005-09-30

Annual Site Environmental Report for the West Valley Demonstration Project (WVDP) for Calendar Year 2004. The report summarizes the environmental protection program at the West Valley Demonstration Project for CY 2004.

West Valley Demonstration Project Annual Site Environmental Report Calendar Year 2004

International Nuclear Information System (INIS)

2005-01-01

Annual Site Environmental Report for the West Valley Demonstration Project (WVDP) for Calendar Year 2004. The report summarizes the environmental protection program at the West Valley Demonstration Project for CY 2004

Phosphorus-doped Amorphous Silicon Nitride Films Applied to Crystalline Silicon Solar Cells

NARCIS (Netherlands)

Feinäugle, Matthias

2008-01-01

The Photovoltaics Group at the Universitat Politècnica de Catalunya is investigating silicon carbide (SiC) for the electronic passivation of the surface of crystalline silicon solar cells. The doping of SiC passivation layers with phosphorus resulted in a clear improvement of the minority carrier

Synthesis of Novel Reactive Disperse Silicon-Containing Dyes and Their Coloring Properties on Silicone Rubbers

Directory of Open Access Journals (Sweden)

Ning Yu

2018-01-01

Full Text Available Novel red and purple reactive disperse silicon-containing dyes were designed and synthesized using p-nitroaniline and 6-bromo-2,4-dinitro-aniline as diazonium components, the first condensation product of cyanuric chloride and 3-(N,N-diethylamino-aniline as coupling component, and 3-aminopropylmethoxydimethylsilane, 3-aminopropylmethyldimethoxysilane, and 3-aminopropyltrimethoxysilane as silicone reactive agents. These dyes were characterized by UV-Vis, 1H-NMR, FT-IR, and MS. The obtained reactive disperse silicon-containing dyes were used to color silicone rubbers and the color fastness of the dyes were evaluated. The dry/wet rubbing and washing fastnesses of these dyes all reached 4–5 grade and the sublimation fastness was also above 4 grade, indicating outstanding performance in terms of color fastness. Such colored silicone rubbers showed bright and rich colors without affecting its static mechanical properties.

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

Science.gov (United States)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Silicon integrated circuit process

International Nuclear Information System (INIS)

Lee, Jong Duck

1985-12-01

This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

Silicon integrated circuit process

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Duck

1985-12-15

This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

Silicon micromachined vibrating gyroscopes

Science.gov (United States)

Voss, Ralf

1997-09-01

This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

Silicon containing copolymers

CERN Document Server

Amiri, Sahar; Amiri, Sanam

2014-01-01

Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

Infill of tunnel valleys associated with landward‐flowing ice sheets

DEFF Research Database (Denmark)

Moreau, Julien; Huuse, Mads

2014-01-01

The southern termination of the Middle and Late Pleistocene Scandinavian ice sheets was repeatedly located in the southern North Sea (sNS) and adjacent, north-sloping land areas. Giant meltwater-excavated valleys (tunnel valleys) formed at the southern termination of the ice sheets and contain...

Diamond deposition on siliconized stainless steel

International Nuclear Information System (INIS)

Alvarez, F.; Reinoso, M.; Huck, H.; Rosenbusch, M.

2010-01-01

Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp 2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

Transmutation doping of silicon solar cells

Science.gov (United States)

Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

1977-01-01

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Hybrid Integrated Platforms for Silicon Photonics

Directory of Open Access Journals (Sweden)

John E. Bowers

2010-03-01

Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Silicon on insulator self-aligned transistors

Science.gov (United States)

McCarthy, Anthony M.

2003-11-18

A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

Creep analysis of silicone for podiatry applications.

Science.gov (United States)

Janeiro-Arocas, Julia; Tarrío-Saavedra, Javier; López-Beceiro, Jorge; Naya, Salvador; López-Canosa, Adrián; Heredia-García, Nicolás; Artiaga, Ramón

2016-10-01

This work shows an effective methodology to characterize the creep-recovery behavior of silicones before their application in podiatry. The aim is to characterize, model and compare the creep-recovery properties of different types of silicone used in podiatry orthotics. Creep-recovery phenomena of silicones used in podiatry orthotics is characterized by dynamic mechanical analysis (DMA). Silicones provided by Herbitas are compared by observing their viscoelastic properties by Functional Data Analysis (FDA) and nonlinear regression. The relationship between strain and time is modeled by fixed and mixed effects nonlinear regression to compare easily and intuitively podiatry silicones. Functional ANOVA and Kohlrausch-Willians-Watts (KWW) model with fixed and mixed effects allows us to compare different silicones observing the values of fitting parameters and their physical meaning. The differences between silicones are related to the variations of breadth of creep-recovery time distribution and instantaneous deformation-permanent strain. Nevertheless, the mean creep-relaxation time is the same for all the studied silicones. Silicones used in palliative orthoses have higher instantaneous deformation-permanent strain and narrower creep-recovery distribution. The proposed methodology based on DMA, FDA and nonlinear regression is an useful tool to characterize and choose the proper silicone for each podiatry application according to their viscoelastic properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

Semiconducting silicon nanowires for biomedical applications

CERN Document Server

Coffer, JL

2014-01-01

Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

Glacial geology of the upper Wairau Valley, Marlborough, New Zealand

International Nuclear Information System (INIS)

McCalpin, J.P.

1992-01-01

Late Pleistocene glaciers in the upper Wairau Valley deposited four groups of moraines inferred to represent one Waimean ice advance, two Otiran ice advances, and an advance of early Aranuian age. The Waimean and early Otiran glaciers advanced into Tarndale Valley, deposited terminal moraines, and shed outwash down both the Alma River and Travellers Valley. The middle Otiran glacier terminated in northern Tarndale Valley and shed outwash from the southern part of its terminus down the Alma River. The north side of the terminus abutted a large ice-dammed lake in the Wairau Gorge, and fan-deltas graded to an old shore level at an elevation of 1040 m. Well-preserved moraines at the mouths of four glaciated tributaries may be middle Otiran recessional, or late Otiran terminal moraines. The latest ice advance extended 11 km down the upper Wairau Valley and deposited a subdued moraine at Island Gully. The composite chronology of the latest glacial advance based on 10 radiocarbon ages suggests it occurred between about 9.5 and 10.2 ka. This age span is similar to that of early Aranuian glacial advances dated by other workers in the Southern Alps, and may reflect Younger Dryas cooling. (author). 22 refs., 10 figs., 3 tabs

Synthesis of Silicon Nanocrystals in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

Amorphous silicon crystalline silicon heterojunction solar cells

CERN Document Server

Fahrner, Wolfgang Rainer

2013-01-01

Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

Strained silicon as a new electro-optic material

DEFF Research Database (Denmark)

Jacobsen, Rune Shim; Andersen, Karin Nordström; Borel, Peter Ingo

2006-01-01

For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized1, 2. The slow progress within silicon optoelectronics, where electronic and optical...... functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon3. Recently, however, a continuous-wave Raman silicon laser was demonstrated4; if an effective modulator could also be realized in silicon, data...... processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top...

Makran Mountain Range, Indus River Valley, Pakistan, India

Science.gov (United States)

1984-01-01

The enormous geologic pressures exerted by continental drift can be very well illustrated by the long northward curving parallel folded mountain ridges and valleys of the coastal Makran Range of Pakistan (27.0N, 66.0E). As a result of the collision of the northward bound Indian sub-continent into the Asian Continent, the east/west parallel range has been bent in a great northward arc and forming the Indus River valley at the interface of the collision.

Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

OpenAIRE

Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

2016-01-01

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

Surface Effects in Segmented Silicon Sensors

OpenAIRE

Kopsalis, Ioannis

2017-01-01

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

Silicon photonics for multicore fiber communication

DEFF Research Database (Denmark)

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

2016-01-01

We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices.......We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

Dephosphorization of Levitated Silicon-Iron Droplets for Production of Solar-Grade Silicon

Science.gov (United States)

Le, Katherine; Yang, Yindong; Barati, Mansoor; McLean, Alexander

2018-05-01

The treatment of relatively inexpensive silicon-iron alloys is a potential refining route in order to generate solar-grade silicon. Phosphorus is one of the more difficult impurity elements to remove by conventional processing. In this study, electromagnetic levitation was used to investigate phosphorus behavior in silicon-iron alloy droplets exposed to H2-Ar gas mixtures under various experimental conditions including, refining time, temperature (1723 K to 1993 K), gas flow rate, iron content, and initial phosphorus concentration in the alloy. Thermodynamic modeling of the dephosphorization reaction permitted prediction of the various gaseous products and indicated that diatomic phosphorus is the dominant species formed.

Landform Evolution of the Zanskar Valley, Ladakh Himalaya.

Science.gov (United States)

Chahal, P.; Kumar, A.; Sharma, P.; Sundriyal, Y.; Srivastava, P.

2017-12-01

Zanskar River flow from south-west to north-east, perpendicularly through Higher Himalayan crystalline sequences, Tethyan sedimentary sequences, and Indus Molasses; and finally merge with the Indus River at Nimu. Geologically, the Indus valley is bounded by Ladakh Batholith in the north and highly folded and thrusted Zanskar mountain ranges in the south. Sedimentary sequences of Zanskar ranges are largely of continental origin, which were uplifted and deformed via several north verging thrusts, where Zanskar counter thrust, Choksti and Indus-Bazgo thrusts are important thrust zone, and there is atleast 36 km of crustal shortening in the Zanskar section which continued from middle Miocene to the late Pleistocene. This shortening is accommodated mainly by north or north-east directed Zanskar backthrusts. Two major tributaries of Zanskar: Tsrapchu and Doda, flow in the headwaters, along the strike of South Tibetan Detachment System (STDs), an east-west trending regional fault. The present study incorporate field sedimentology, geomorphology and chronology of landform associated with Zanskar valley. In the upper Zanskar, alluvial fan, valley fill and strath terraces configured the major landforms with paleo-lake deposits­­­ in the area between the fans. The lower catchment, at the confluence of Zanskar and Indus rivers, exhibit mainly valley fill terraces and strath terraces. Chronology suggests diachronous aggradation in the upper and lower Zanskar catchments. In the upper Zanskar large scale valley aggradation took place with simultaneously fan progradation and flooding events from 45-15 ka. Luminescence chronology of the lower Zanskar indicates aggradation from 145-55 ka and 18-12 ka. The two aggradation basins are separated by a deep V-shaped gorge which is approximately 60 km long. The longitudinal profile of the Zanskar River shows several local convexities marking knick point zone, which suggests tectonically controlled topography.

Signal development in irradiated silicon detectors

CERN Document Server

Kramberger, Gregor; Mikuz, Marko

2001-01-01

This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

Transport of regional pollutants through a remote trans-Himalayan valley in Nepal

Directory of Open Access Journals (Sweden)

S. Dhungel

2018-01-01

Full Text Available Anthropogenic emissions from the combustion of fossil fuels and biomass in Asia have increased in recent years. High concentrations of reactive trace gases and light-absorbing and light-scattering particles from these sources form persistent haze layers, also known as atmospheric brown clouds, over the Indo–Gangetic plains (IGP from December through early June. Models and satellite imagery suggest that strong wind systems within deep Himalayan valleys are major pathways by which pollutants from the IGP are transported to the higher Himalaya. However, observational evidence of the transport of polluted air masses through Himalayan valleys has been lacking to date. To evaluate this pathway, we measured black carbon (BC, ozone (O3, and associated meteorological conditions within the Kali Gandaki Valley (KGV, Nepal, from January 2013 to July 2015. BC and O3 varied over both diurnal and seasonal cycles. Relative to nighttime, mean BC and O3 concentrations within the valley were higher during daytime when the up-valley flow (average velocity of 17 m s−1 dominated. BC and O3 concentrations also varied seasonally with minima during the monsoon season (July to September. Concentrations of both species subsequently increased post-monsoon and peaked during March to May. Average concentrations for O3 during the seasonally representative months of April, August, and November were 41.7, 24.5, and 29.4 ppbv, respectively, while the corresponding BC concentrations were 1.17, 0.24, and 1.01 µg m−3, respectively. Up-valley fluxes of BC were significantly greater than down-valley fluxes during all seasons. In addition, frequent episodes of BC concentrations 2–3 times higher than average persisted from several days to a week during non-monsoon months. Our observations of increases in BC concentration and fluxes in the valley, particularly during pre-monsoon, provide evidence that trans-Himalayan valleys are important conduits for transport of

Transport of regional pollutants through a remote trans-Himalayan valley in Nepal

Science.gov (United States)

Dhungel, Shradda; Kathayat, Bhogendra; Mahata, Khadak; Panday, Arnico

2018-01-01

Anthropogenic emissions from the combustion of fossil fuels and biomass in Asia have increased in recent years. High concentrations of reactive trace gases and light-absorbing and light-scattering particles from these sources form persistent haze layers, also known as atmospheric brown clouds, over the Indo-Gangetic plains (IGP) from December through early June. Models and satellite imagery suggest that strong wind systems within deep Himalayan valleys are major pathways by which pollutants from the IGP are transported to the higher Himalaya. However, observational evidence of the transport of polluted air masses through Himalayan valleys has been lacking to date. To evaluate this pathway, we measured black carbon (BC), ozone (O3), and associated meteorological conditions within the Kali Gandaki Valley (KGV), Nepal, from January 2013 to July 2015. BC and O3 varied over both diurnal and seasonal cycles. Relative to nighttime, mean BC and O3 concentrations within the valley were higher during daytime when the up-valley flow (average velocity of 17 m s-1) dominated. BC and O3 concentrations also varied seasonally with minima during the monsoon season (July to September). Concentrations of both species subsequently increased post-monsoon and peaked during March to May. Average concentrations for O3 during the seasonally representative months of April, August, and November were 41.7, 24.5, and 29.4 ppbv, respectively, while the corresponding BC concentrations were 1.17, 0.24, and 1.01 µg m-3, respectively. Up-valley fluxes of BC were significantly greater than down-valley fluxes during all seasons. In addition, frequent episodes of BC concentrations 2-3 times higher than average persisted from several days to a week during non-monsoon months. Our observations of increases in BC concentration and fluxes in the valley, particularly during pre-monsoon, provide evidence that trans-Himalayan valleys are important conduits for transport of pollutants from the IGP to the

Diversity of inland valleys and opportunities for agricultural development in Sierra Leone.

Directory of Open Access Journals (Sweden)

Elliott Ronald Dossou-Yovo

Full Text Available Inland valleys are becoming increasingly important agricultural production areas for rural households in sub-Saharan Africa due to their relative high and secure water availability and soil fertility. In addition, inland valleys are important as water buffer and biodiversity hot spots and they provide local communities with forest, forage, and fishing resources. As different inland-valley ecosystem functions may conflict with agricultural objectives, indiscriminate development should be avoided. This study aims to analyze the diversity of inland valleys in Sierra Leone and to develop guidelines for more precise interventions. Land use, biophysical and socio-economic data were analyzed on 257 inland valleys using spatial and multivariate techniques. Five cluster groups of inland valleys were identified: (i semi-permanently flooded with high soil organic carbon (4.2% and moderate available phosphorus (10.2 ppm, mostly under natural vegetation; (ii semi-permanently flooded with low soil organic carbon (1.5% and very low available phosphorus (3.1 ppm, abandoned by farmers; (iii seasonally flooded with moderate soil organic carbon (3.1% and low available phosphorus (8.3 ppm, used for rainfed rice and off-season vegetables produced without fertilizer application for household consumption and market; (iv well drained with moderate soil organic carbon (3.8% and moderate available phosphorus (10.0 ppm, used for rainfed rice and off-season vegetables produced with fertilizer application for household consumption and market; and (v well drained with moderate soil organic carbon (3.6% and moderate available phosphorus (11 ppm, used for household consumption without fertilizer application. Soil organic carbon, available phosphorus, hydrological regime, physical accessibility and market opportunity were the major factors affecting agricultural intensification of inland valleys. Opening up the areas in which inland valleys occur through improved roads and

Ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

2013-12-01

We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

Relationship between silicon concentration and creatinine clearance

International Nuclear Information System (INIS)

Miura, Y.; Nakai, K.; Itoh, C.; Horikiri, J.; Sera, K.; Sato, M.

1998-01-01

Silicon levels in dialysis patients are markedly increasing. Using PIXE we determined the relationship between silicon concentration and creatinine clearance in 30 samples. Urine silicon concentration were significantly correlated to creatinine clearance (p<0.001). And also serum silicon concentration were significantly correlated to creatinine clearance (p<0.0001). (author)

Structural evolution of the east Sierra Valley system (Owens Valley and vicinity), California: a geologic and geophysical synthesis

Science.gov (United States)

Stevens, Calvin H.; Stone, Paul; Blakely, Richard J.

2013-01-01

The tectonically active East Sierra Valley System (ESVS), which comprises the westernmost part of the Walker Lane-Eastern California Shear Zone, marks the boundary between the highly extended Basin and Range Province and the largely coherent Sierra Nevada-Great Valley microplate (SN-GVm), which is moving relatively NW. The recent history of the ESVS is characterized by oblique extension partitioned between NNW-striking normal and strike-slip faults oriented at an angle to the more northwesterly relative motion of the SN-GVm. Spatially variable extension and right-lateral shear have resulted in a longitudinally segmented valley system composed of diverse geomorphic and structural elements, including a discontinuous series of deep basins detected through analysis of isostatic gravity anomalies. Extension in the ESVS probably began in the middle Miocene in response to initial westward movement of the SN-GVm relative to the Colorado Plateau. At ca. 3-3.5 Ma, the SN-GVm became structurally separated from blocks directly to the east, resulting in significant basin-forming deformation in the ESVS. We propose a structural model that links high-angle normal faulting in the ESVS with coeval low-angle detachment faulting in adjacent areas to the east.

Highly efficient silicon light emitting diode

NARCIS (Netherlands)

Le Minh, P.; Holleman, J.; Wallinga, Hans

2002-01-01

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

Silicon-Based Nanoscale Composite Energetic Materials

Science.gov (United States)

2013-02-01

1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

Clean Cities Award Winning Coalition: Coachella Valley

Energy Technology Data Exchange (ETDEWEB)

ICF Kaiser

1999-05-20

Southern California's Coachella Valley became a Clean Cities region in 1996. Since then, they've made great strides. SunLine Transit, the regional public transit provider, was the first transit provider to replace its entire fleet with compressed natural gas buses. They've also built the foundation for a nationally recognized model in the clean air movement, by partnering with Southern California Gas Company to install a refueling station and developing a curriculum for AFV maintenance with the College of the Desert. Today the valley is home to more than 275 AFVs and 15 refueling stations.

Some Environmental Issues of Inland Valleys: A Case Study | Asiam ...

African Journals Online (AJOL)

The study concluded that inland valleys can be real environmental liability because produce from such valleys can be polluted and hence can be a source of social conflict particularly when they fringe mineral concessions as the adverse impacts could be unfortunately attributed to mining activity and similar land uses.

An FPGA-based silicon neuronal network with selectable excitability silicon neurons

Directory of Open Access Journals (Sweden)

Jing eLi

2012-12-01

Full Text Available This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN and the transmitter release based silicon synapse, allow the network to show rich dynamic behaviors and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with $256$ full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs.

Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

International Nuclear Information System (INIS)

Yu Zhenrui; Aceves, Mariano; Carrillo, Jesus; Lopez-Estopier, Rosa

2006-01-01

The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V T . When the applied voltage is smaller than V T , the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V T , the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained

Parking Space Occupancy at Rail Stations in Klang Valley

Directory of Open Access Journals (Sweden)

Ho Phooi Wai

2017-01-01

Full Text Available The development of Klang Valley Integrated Rapid Transit system in Klang Valley, Malaysia has been quickly gaining momentum during the recent years. There will be two new MRT lines (MRT Line 1 and MRT Line 2 and one new LRT line (LRT Line 3 extended from the current integrated rail transit system by year 2020 with more than 90 new rail stations. With the substantial addition of potential rail passengers, there are doubts whether the existing Park and Ride facilities in Klang Valley are able to accommodate the future parking space demand at rail stations. This research studies the parking occupancy at various Park and Ride facilities in Klang Valley namely Taman Jaya, Asia Jaya, Taman Paramount, Taman Bahagia and Kelana Jaya by applying the non-conventional method utilizing Google Earth imageries. Results showed that the parking occupancy rate at these LRT stations were 100% or more before the commencement of LRT extension (Kelana Jaya and Ampang Lines in 2016 and in the range of 36% to 100% after the commencement of LRT extension due to the additionally built car parks and changes in parking pattern with dispersed passenger traffic.

Martian channels and valleys - Their characteristics, distribution, and age

Science.gov (United States)

Carr, M. H.; Clow, G. D.

1981-01-01

The distribution and ages of Martian channels and valleys, which are generally believed to have been cut by running water, are examined with particular emphasis on the small branching networks referred to as runoff channels or valley networks. Valleys at latitudes from 65 deg S to 65 deg N were surveyed on Viking images at resolutions between 125 and 300 m. Almost all of the valleys are found in the old cratered terrain, in areas characterized by high elevations, low albedos and low violet/red ratios. The networks are deduced to have formed early in the history of the planet, with a formation rate declining rapidly shortly after the decline of the cratering rate 3.9 billion years ago. Two types of outflow channels are distinguished: unconfined, in which broad swaths of terrain are scoured, and confined, in which flow is restricted to discrete channels. Both types start at local sources, and have formed episodically throughout Martian history. Fretted channels, found mainly in two latitude belts characterized by relatively rapid erosion along escarpments, are explained by the lateral enlargement of other channels by mass wasting.

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

Science.gov (United States)

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Reporting on nuclear power: the Tennessee Valley case

International Nuclear Information System (INIS)

Shapley, D.

1977-01-01

The Tennessee Valley Authority (TVA), by deciding to have 90 percent of its new generating capacity nuclear, has made the valley a testing ground for civilian nuclear power, but valley newspapers have not provided consumers with enough information on either the pros or cons. A 1975 Browns Ferry plant fire, the most serious in the history of the civilian nuclear industry, prompted some nuclear critics to question TVA's competence to plan and manage the program. Newspapers carried wire-service stories of the fire, while their editorials gave strong support to TVA and the effort to reopen the plant. Valley newspapers have traditionally favored TVA as a powerful economic and political force which has brought many benefits. Local pride in the Oak Ridge Laboratory and plant facilities and the Federal fast-breeder reactor project headquarters also enhanced the positive attitude of the press, which tended to report details but not question nuclear safety or TVA ability. Newspapers have also failed to question TVA's claims that rates will decline as nuclear plants begin operating. A review of relevant news stories during the 1975--1976 period addresses the press coverage and notes its failure to question whether power demands justify TVA's plant construction program. Knowledgeable consultants are available to provide information on the issues, while editors are advised to give comprehensive, critical coverage and avoid promotion

Radiation resistant passivation of silicon solar cells

International Nuclear Information System (INIS)

Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

1991-01-01

This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

Decision analysis framing study; in-valley drainage management strategies for the western San Joaquin Valley, California

Science.gov (United States)

Presser, Theresa S.; Jenni, Karen E.; Nieman, Timothy; Coleman, James

2010-01-01

Constraints on drainage management in the western San Joaquin Valley and implications of proposed approaches to management were recently evaluated by the U.S. Geological Survey (USGS). The USGS found that a significant amount of data for relevant technical issues was available and that a structured, analytical decision support tool could help optimize combinations of specific in-valley drainage management strategies, address uncertainties, and document underlying data analysis for future use. To follow-up on USGS's technical analysis and to help define a scientific basis for decisionmaking in implementing in-valley drainage management strategies, this report describes the first step (that is, a framing study) in a Decision Analysis process. In general, a Decision Analysis process includes four steps: (1) problem framing to establish the scope of the decision problem(s) and a set of fundamental objectives to evaluate potential solutions, (2) generation of strategies to address identified decision problem(s), (3) identification of uncertainties and their relationships, and (4) construction of a decision support model. Participation in such a systematic approach can help to promote consensus and to build a record of qualified supporting data for planning and implementation. In December 2008, a Decision Analysis framing study was initiated with a series of meetings designed to obtain preliminary input from key stakeholder groups on the scope of decisions relevant to drainage management that were of interest to them, and on the fundamental objectives each group considered relevant to those decisions. Two key findings of this framing study are: (1) participating stakeholders have many drainage management objectives in common; and (2) understanding the links between drainage management and water management is necessary both for sound science-based decisionmaking and for resolving stakeholder differences about the value of proposed drainage management solutions. Citing

Floating Silicon Method

Energy Technology Data Exchange (ETDEWEB)

Kellerman, Peter

2013-12-21

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

Silicon photonics for telecommunications and biomedicine

CERN Document Server

Fathpour, Sasan

2011-01-01

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

Spiral silicon drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

1988-01-01

An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

Scattering characteristics from porous silicon

Directory of Open Access Journals (Sweden)

R. Sabet-Dariani

2000-12-01

Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

Engineering piezoresistivity using biaxially strained silicon

DEFF Research Database (Denmark)

Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads

2008-01-01

of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity...

ePIXfab - The silicon photonics platform

NARCIS (Netherlands)

Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

2013-01-01

ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

BPA/Lower Valley transmission project. Final environmental impact statement

International Nuclear Information System (INIS)

1998-06-01

Bonneville Power Administration and Lower Valley Power and Light, Inc. propose to solve a voltage stability problem in the Jackson and Afton, Wyoming areas. Lower Valley buys electricity from BPA and then supplies it to the residences and businesses of the Jackson and Afton, Wyoming areas. BPA is considering five alternatives. For the Agency Proposed Action, BPA and Lower Valley would construct a new 115-kV line from BPA's Swan Valley Substation near Swan Valley in Bonneville County, Idaho about 58 km (36 miles) east to BPA's Teton Substation near Jackson in Teton County, Wyoming. The new line would be next to an existing 115-kV line. The Single-Circuit Line Alternative has all the components of the Agency Proposed Action except that the entire line would be supported by single-circuit wood pole H-frame structures. the Short Line Alternative has all the components of the Single-Circuit Line Alternative except it would only be half as long. BPA would also construct a new switching station near the existing right-of-way, west or north of Targhee Tap. Targhee Tap would then be removed. For the Static Var Compensation Alternative, BPA would install a Static Var Compensator (SVC) at Teton or Jackson Substation. An SVC is a group of electrical equipment placed at a substation to help control voltage on a transmission system. The No Action Alternative assumes that no new transmission line is built, and no other equipment is added to the transmission system

Hybrid III-V/silicon lasers

Science.gov (United States)

Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

2014-05-01

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

X-ray and scanning electron microscopic investigation of porous silicon and silicon epitaxial layers grown on porous silicon

International Nuclear Information System (INIS)

Wierzchowski, W.; Pawlowska, M.; Nossarzewska-Orlowska, E.; Brzozowski, A.; Wieteska, K.; Graeff, W.

1998-01-01

The 1 to 5 μm thick layers of porous silicon and epitaxial layers grown on porous silicon were studied by means of X-ray diffraction methods, realised with a wide use of synchrotron source and scanning microscopy. The results of x-ray investigation pointed the difference of lateral periodicity between the porous layer and the substrate. It was also found that the deposition of epitaxial layer considerably reduced the coherence of porous fragments. A number of interface phenomena was also observed in section and plane wave topographs. The scanning electron microscopic investigation of cleavage faces enabled direct evaluation of porous layer thickness and revealed some details of their morphology. The scanning observation of etched surfaces of epitaxial layers deposited on porous silicon revealed dislocations and other defects not reasonable in the X-ray topographs. (author)

Vitrification facility at the West Valley Demonstration Project

International Nuclear Information System (INIS)

DesCamp, V.A.; McMahon, C.L.

1996-07-01

This report is a description of the West Valley Demonstration Project's vitrification facilities from the establishment of the West Valley, NY site as a federal and state cooperative project to the completion of all activities necessary to begin solidification of radioactive waste into glass by vitrification. Topics discussed in this report include the Project's background, high-level radioactive waste consolidation, vitrification process and component testing, facilities design and construction, waste/glass recipe development, integrated facility testing, and readiness activities for radioactive waste processing

Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

Science.gov (United States)

Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

2015-09-02

In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

Geomorphological characteristics of increased landslide activity in the Gudbrandsdalen valley, Norway

Science.gov (United States)

Heyerdahl, Håkon; Høydal, Øyvind

2016-04-01

The Gudbrandsdalen valley in Eastern Norway lies in a region where annual precipitation is generally low (down to 300 mm/year). The landslide activity has consequently historically been low, although the lower part of the valley sides generally is draped with thick layers of Quaternary deposits, primarily of glacial or glaciofluvial origin. The perception of natural hazards in the valley was previously primarily connected to flooding in the main river in the valley bottom during early summer, due to large discharges resulting from snowmelt in the mountainous regions west and east of the valley. However, several high-intensity events have changed the image of the region. Starting with a localized, but intense, landslide event in the Northern part of the valley in year 2008, two larger events covering almost the entire valley occurred in the years 2011 and 2013. A high number of landslides was triggered in all these events, including many flash floods and debris flows/debris slides in small and steep tributary rivers along the valley slopes. Landslide triggering covers different release mechanisms: In 2008, landslides were triggered without precipitation in not-frozen soil deposits without snow cover in the lower part of the valley. Groundwater flow through the permeable bedrock ("Otta schist") resulting from snow-melt in the elevated mountainous areas caused landslide triggering due to positive pore-water pressures forming at the bedrock surface below soil deposits, or at depressions in the terrain. Subsequent rainfall resulted in even more landslides being released. In later events (years 2011 and 2013) many landslides were caused by surface water taking new paths downslope, often due to man-made changes in existing waterways (typically poorly planned drainage solutions or new roads). Relatively small discharges in slopes with unconsolidated and easily erodible glacial deposits (typically lateral moraine) in many cases lead to small initial slides that down

Rift Valley fever potential mosquito vectors and their infection status ...

African Journals Online (AJOL)

Background: Rift Valley fever (RVF) is a mosquito-borne viral zoonotic disease. Rift Valley fever virus (RVFV) has been isolated from more than 40 species of mosquitoes from eight genera. This study was conducted to determine the abundance of potential mosquito vectors and their RVFV infection status in Ngorongoro ...

Hydrogeologic Framework and Ground Water in Basin-Fill Deposits of the Diamond Valley Flow System, Central Nevada

Science.gov (United States)

Tumbusch, Mary L.; Plume, Russell W.

2006-01-01

The Diamond Valley flow system, an area of about 3,120 square miles in central Nevada, consists of five hydrographic areas: Monitor, Antelope, Kobeh, and Diamond Valleys and Stevens Basin. Although these five areas are in a remote part of Nevada, local government officials and citizens are concerned that the water resources of the flow system eventually could be further developed for irrigation or mining purposes or potentially for municipal use outside the study area. In order to better understand the flow system, the U.S. Geological Survey in cooperation with Eureka, Lander, and Nye Counties and the Nevada Division of Water Resources, is conducting a multi-phase study of the flow system. The principal aquifers of the Diamond Valley flow system are in basin-fill deposits that occupy structural basins comprised of carbonate rocks, siliciclastic sedimentary rocks, igneous intrusive rocks, and volcanic rocks. Carbonate rocks also function as aquifers, but their extent and interconnections with basin-fill aquifers are poorly understood. Ground-water flow in southern Monitor Valley is from the valley margins toward the valley axis and then northward to a large area of discharge by evapotranspiration (ET) that is formed south of a group of unnamed hills near the center of the valley. Ground-water flow from northern Monitor Valley, Antelope Valley, and northern and western parts of Kobeh Valley converges to an area of ground-water discharge by ET in central and eastern Kobeh Valley. Prior to irrigation development in the 1960s, ground-water flow in Diamond Valley was from valley margins toward the valley axis and then northward to a large discharge area at the north end of the valley. Stevens Basin is a small upland basin with internal drainage and is not connected with other parts of the flow system. After 40 years of irrigation pumping, a large area of ground-water decline has developed in southern Diamond Valley around the irrigated area. In this part of Diamond

Groundwater budgets for Detrital, Hualapai, and Sacramento Valleys, Mohave County, Arizona, 2007-08

Science.gov (United States)

Garner, Bradley D.; Truini, Margot

2011-01-01

The United States Geological Survey, in cooperation with the Arizona Department of Water Resources, initiated an investigation of the hydrogeology and water resources of Detrital, Hualapai, and Sacramento Valleys in northwestern Arizona in 2005, and this report is part of that investigation. Water budgets were developed for Detrital, Hualapai, and Sacramento Valleys to provide a generalized understanding of the groundwater systems in this rural area that has shown some evidence of human-induced water-level declines. The valleys are within the Basin and Range physiographic province and consist of thick sequences of permeable alluvial sediment deposited into basins bounded by relatively less permeable igneous and metamorphic rocks. Long-term natural recharge rates (1940-2008) for the alluvial aquifers were estimated to be 1,400 acre-feet per year (acre-ft/yr) for Detrital Valley, 5,700 acre-ft/yr for Hualapai Valley, and 6,000 acre-ft/yr for Sacramento Valley. Natural discharge rates were assumed to be equal to natural recharge rates, on the basis of the assumption that all groundwater withdrawals to date have obtained water from groundwater storage. Groundwater withdrawals (2007-08) for the alluvial aquifers were less than 300 acre-ft/yr for Detrital Valley, about 9,800 acre-ft/yr for Hualapai Valley, and about 4,500 acre-ft/yr for Sacramento Valley. Incidental recharge from leaking water-supply pipes, septic systems, and wastewater-treatment plants accounted for about 35 percent of total recharge (2007-08) across the study area. Natural recharge and discharge values in this study were 24-50 percent higher than values in most previously published studies. Water budgets present a spatially and temporally "lumped" view of water resources and incorporate many sources of uncertainty in this study area where only limited data presently are available.

Diurnal cycle of air pollution in the Kathmandu Valley, Nepal: 2. Modeling results

Science.gov (United States)

Panday, Arnico K.; Prinn, Ronald G.; SchäR, Christoph

2009-11-01

After completing a 9-month field experiment studying air pollution and meteorology in the Kathmandu Valley, Nepal, we set up the mesoscale meteorological model MM5 to simulate the Kathmandu Valley's meteorology with a horizontal resolution of up to 1 km. After testing the model against available data, we used it to address specific questions to understand the factors that control the observed diurnal cycle of air pollution in this urban basin in the Himalayas. We studied the dynamics of the basin's nocturnal cold air pool, its dissipation in the morning, and the subsequent growth and decay of the mixed layer over the valley. During mornings, we found behavior common to large basins, with upslope flows and basin-center subsidence removing the nocturnal cold air pool. During afternoons the circulation in the Kathmandu Valley exhibited patterns common to plateaus, with cooler denser air originating over lower regions west of Kathmandu arriving through mountain passes and spreading across the basin floor, thereby reducing the mixed layer depth. We also examined the pathways of pollutant ventilation out of the valley. The bulk of the pollution ventilation takes place during the afternoon, when strong westerly winds blow in through the western passes of the valley, and the pollutants are rapidly carried out through passes on the east and south sides of the valley. In the evening, pollutants first accumulate near the surface, but then are lifted slightly when katabatic flows converge underneath. The elevated polluted layers are mixed back down in the morning, contributing to the morning pollution peak. Later in the morning a fraction of the valley's pollutants travels up the slopes of the valley rim mountains before the westerly winds begin.

Method For Producing Mechanically Flexible Silicon Substrate

KAUST Repository

Hussain, Muhammad Mustafa

2014-08-28

A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

Intermediate Bandgap Solar Cells From Nanostructured Silicon

Energy Technology Data Exchange (ETDEWEB)

Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

2014-10-30

This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

Method For Producing Mechanically Flexible Silicon Substrate

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto

2014-01-01

A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

International Nuclear Information System (INIS)

Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

2011-01-01

We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

Energy Technology Data Exchange (ETDEWEB)

Darbari, S; Shahmohammadi, M; Mortazavi, M; Mohajerzadeh, S [Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y [Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M; Morrison, T, E-mail: mohajer@ut.ac.ir [Department of Physics, Acadia University, Wolfville, NS (Canada)

2011-09-16

A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

PROFILE OF SOCIAL SERVICES FROM JIU VALLEY IN LIGHT PROFESSIONALS PERCEPTION. QUALITATIVE APPROACH

Directory of Open Access Journals (Sweden)

FELICIA ANDRIONI

2012-10-01

Full Text Available This study aims to analyse Jiu Valley social services profile using a qualitative perspective – focus grup analysis, by investigating perceptions of social services professionals from Jiu Valley, Hunedoara County, Romania. The qualitative methods of investigation, particularly important in achieving a comprehensive profile of social services from the Jiu Valley was to achieve a focused discussion sessions on social services. The following objectives were targeted by focus group: analysis of social professionals’ perception on social services from the Jiu Valley, Hunedoara County and identifying internal and external factors, to put their mark on the functioning of social services. Upon completion of discussions session focusing on social services in the Jiu Valley to conclude on the following aspects: social professionals perceive favorable development of social services in the Jiu Valley region in the period 2002-2008, and considering the dynamic development of these services is progressive. There are a number of elements which are seen by professionals as catalysts for the proper functioning and development of social services and factors inhibiting or blocking the functioning of these services.

High-efficient solar cells with porous silicon

International Nuclear Information System (INIS)

Migunova, A.A.

2002-01-01

It has been shown that the porous silicon is multifunctional high-efficient coating on silicon solar cells, modifies its surface and combines in it self antireflection and passivation properties., The different optoelectronic effects in solar cells with porous silicon were considered. The comparative parameters of uncovered photodetectors also solar cells with porous silicon and other coatings were resulted. (author)

Luminescence of porous silicon doped by erbium

International Nuclear Information System (INIS)

Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

1996-01-01

The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

Process of preparing tritiated porous silicon

Science.gov (United States)

Tam, Shiu-Wing

1997-01-01

A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

Modification of silicon nitride and silicon carbide surfaces for food and biosensor applications

NARCIS (Netherlands)

Rosso, M.

2009-01-01

Silicon-rich silicon nitride (SixN4, x > 3) is a robust insulating material widely used for the coating of microdevices: its high chemical and mechanical inertness make it a material of choice for the reinforcement of fragile microstructures (e.g. suspended microcantilevers, micro-fabricated

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

Science.gov (United States)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

Amorphous silicon based particle detectors

OpenAIRE

Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

2012-01-01

Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

West Valley facility spent fuel handling, storage, and shipping experience

International Nuclear Information System (INIS)

Bailey, W.J.

1990-11-01

The result of a study on handling and shipping experience with spent fuel are described in this report. The study was performed by Pacific Northwest Laboratory (PNL) and was jointly sponsored by the US Department of Energy (DOE) and the Electric Power Research Institute (EPRI). The purpose of the study was to document the experience with handling and shipping of relatively old light-water reactor (LWR) fuel that has been in pool storage at the West Valley facility, which is at the Western New York Nuclear Service Center at West Valley, New York and operated by DOE. A subject of particular interest in the study was the behavior of corrosion product deposits (i.e., crud) deposits on spent LWR fuel after long-term pool storage; some evidence of crud loosening has been observed with fuel that was stored for extended periods at the West Valley facility and at other sites. Conclusions associated with the experience to date with old spent fuel that has been stored at the West Valley facility are presented. The conclusions are drawn from these subject areas: a general overview of the West Valley experience, handling of spent fuel, storing of spent fuel, rod consolidation, shipping of spent fuel, crud loosening, and visual inspection. A list of recommendations is provided. 61 refs., 4 figs., 5 tabs

Geomorphic controls on Pleistocene knickpoint migration in Alpine valleys

Science.gov (United States)

Leith, Kerry; Fox, Matt; Moore, Jeffrey R.; Brosda, Julian; Krautblatter, Michael; Loew, Simon

2014-05-01

Recent insights into sub-glacial bedrock stress conditions suggest that the erosional efficiency of glaciers may reduce markedly following a major erosional cycle [Leith et al., 2013]. This implies that the formation of large glacial valleys within the Alps is likely to have occurred shortly after the onset of 100 ky glacial-interglacial cycles (at the mid-Pleistocene Revolution (MPR)). The majority of landscape change since this time may have therefore been driven by sub-aerial processes. This hypothesis is supported by observations of hillslope and channel morphology within Canton Valais (Switzerland), where major tributary valleys display a common morphology along their length, hinting at a shared geomorphic history. Glaciers currently occupy the headwaters of many catchments, while the upper reaches of rivers flow across extensive alluvial planes before abruptly transitioning to steep channels consisting of mixed bedrock and talus fan deposits. The rivers then converge to flow out over the alluvial plane of the Rhone Valley. Characteristically rough topographies within the region are suggested to mark the progressive transition from a glacial to fluvially-dominated landscape, and correlate well with steepened river channel sections determined from a 2.5 m resolution LiDAR DEM. We envisage a landscape in which ongoing tectonic uplift drives the emergence of Alpine bedrock through massive sedimentary valley infills (currently concentrated in the Rhone Valley), whose elevation is fixed by the consistent fluvial baselevel at Lake Geneva. As fluvial incision ceases at the onset of glaciation, continued uplift causes the formation of knickpoints at the former transition from bedrock to sedimentary infill. These knickpoints will then propagate upstream during subsequent interglacial periods. By investigating channel morphologies using an approach based on the steady-state form of the stream power equation, we can correlate steepened channel reaches (degraded

Porous silicon: Synthesis and optical properties

International Nuclear Information System (INIS)

Naddaf, M.; Awad, F.

2006-01-01

Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

Porous silicon: Synthesis and optical properties

International Nuclear Information System (INIS)

Naddaf, M.; Awad, F.

2006-06-01

Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

Rod consolidation at the West Valley Demonstration Project

International Nuclear Information System (INIS)

Bailey, W.J.

1986-12-01

A rod consolidation demonstration with irradiated pressurized water reactor fuel was recently conducted by personnel from Nuclear Assurance Corporation and West Valley Nuclear Services Company at the West Valley Demonstration Project in West Valley, New York. The rod consolidation demonstration involved pulling all of the fuel rods from six fuel Assemblies. In general, the rod pulling proceeded smoothly. The highest compaction ratio attained was 1:8:1. Among the total of 1074 fuel rods were some known degraded rods (they had collapsed cladding, a result of in-reactor fuel densification), but no rods were broken or dropped during the demonstration. One aim was to gather information on the effect of rod consolidation operations on the integrity of the fuel rods during subsequent handling and storage. Another goal was to collect information on the condition and handling of intact, damaged, and failed fuel that has been in storage for an extended period. 9 refs., 8 figs., 1 tab

Salinity and resource management in the Hunter Valley

Energy Technology Data Exchange (ETDEWEB)

Creelman, R.A.; Cooke, R.; Simons, M. [RA Creelman & Associates (Australia)

1995-08-01

If excess water salinity is to be managed in the Hunter Valley, its causes and behaviour must be understood. Although Hunter Valley hydrology, hydrogeology and hydrogeochemistry require further study, there is now enough information available to begin the development of both temporal and spatial models as valley management tools. Currently the Department of Water Resources is developing a model known as Integrated Water Quality and Quantity Model (IQQM). IQQM which includes a salinity module is essentially a surface water simulation model. It wll enable testing of alternate management and operation policies such as the salinity property rights trading scheme recently introduced by the EPA to manage salt release from coal mines and power stations. An overview is presented of the progress made to date on the salinity module for IQQM, and an outline is given of the geological and hydrogeochemical concepts that have been assembled to support the salinity module of IQQM. 17 refs., 3 figs., 1 tab.

The Uncanny Valley and Nonverbal Communication in Virtual Characters

DEFF Research Database (Denmark)

Tinwell, Angela; Grimshaw, Mark Nicholas; Abdel Nabi, Debbie

2014-01-01

This chapter provides an overview of a current research project investigating the Uncanny Valley phenomenon in realistic, human-like virtual characters. !e research methods used in this Work include a retrospective of both empirical studies and philosophical writings on the Uncanny. No other...... research has explored the notion that realistic, human-like, virtual characters are regarded less favorably due to a perceived diminished degree of responsiveness in facial expression, specifically, nonverbal communication (NVC) in the upper face region. So far, this research project has provided the first...... empirical evidence to test the Uncanny Valley phenomenon in the domain of animated video game characters with speech, as opposed to just still, unresponsive images, as used in previous studies. Based on the results of these experiments, a conceptual framework of the Uncanny Valley in virtual characters has...

Generation of valley-polarized electron beam in bilayer graphene

International Nuclear Information System (INIS)

Park, Changsoo

2015-01-01

We propose a method to produce valley-polarized electron beams using a bilayer graphene npn junction. By analyzing the transmission properties of electrons through the junction with zigzag interface in the presence of trigonal warping, we observe that there exist a range of incident energies and barrier heights in which transmitted electrons are well polarized and collimated. From this observation and by performing numerical simulations, it is demonstrated that valley-dependent electronic currents with nearly perfect polarization can be generated. We also show that the peak-to-peak separation angle between the polarized currents is tunable either by incident energy or by barrier height each of which is controlled by using top and back gate voltages. The results can be used for constructing an electron beam splitter to produce valley-polarized currents

Generation of valley-polarized electron beam in bilayer graphene

Science.gov (United States)

Park, Changsoo

2015-12-01

We propose a method to produce valley-polarized electron beams using a bilayer graphene npn junction. By analyzing the transmission properties of electrons through the junction with zigzag interface in the presence of trigonal warping, we observe that there exist a range of incident energies and barrier heights in which transmitted electrons are well polarized and collimated. From this observation and by performing numerical simulations, it is demonstrated that valley-dependent electronic currents with nearly perfect polarization can be generated. We also show that the peak-to-peak separation angle between the polarized currents is tunable either by incident energy or by barrier height each of which is controlled by using top and back gate voltages. The results can be used for constructing an electron beam splitter to produce valley-polarized currents.

Silicon Micromachined Microlens Array for THz Antennas

Science.gov (United States)

Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

2013-01-01

5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

Vertical ozone transport in the Alps (VOTALP): the valley experiment 1996

Energy Technology Data Exchange (ETDEWEB)

Furger, M; Dommen, J; Graber, W K; Prevot, A; Poggio, L; Andreani, S; Keller, J; Portmann, W; Buerki, D; Erne, R; Richter, R; Tinguely, M [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

1997-06-01

The EU project VOTALP started its valley campaign in the summer of 1996 in the Mesolcina valley. The influence of thermal circulations on ozone concentrations and on the exchange of ozone and its photochemical precursors between the valley atmosphere and the free troposphere above was the main focus of the study. PSI has participated with various measurement systems (conventional meteorological surface stations, radiosondes, scidar/DOAS systems, chemical analysers). An overview of PSI`s activities in the field campaign is given, and some preliminary results are presented. (author) 1 fig., 2 tabs., 2 refs.

EDITORIAL: Special issue on silicon photonics

Science.gov (United States)

Reed, Graham; Paniccia, Mario; Wada, Kazumi; Mashanovich, Goran

2008-06-01

The technology now known as silicon photonics can be traced back to the pioneering work of Soref in the mid-1980s (see, for example, Soref R A and Lorenzo J P 1985 Electron. Lett. 21 953). However, the nature of the research conducted today, whilst it builds upon that early work, is unrecognizable in terms of technology metrics such as device efficiency, device data rate and device dimensions, and even in targeted applications areas. Today silicon photonics is still evolving, and is enjoying a period of unprecedented attention in terms of research focus. This has resulted in orders-of-magnitude improvement in device performance over the last few years to levels many thought were impossible. However, despite the existence of the research field for more than two decades, silicon is still regarded as a 'new' optical material, one that is being manipulated and modified to satisfy the requirements of a range of applications. This is somewhat ironic since silicon is one of the best known and most thoroughly studied materials, thanks to the electronics industry that has made silicon its material of choice. The principal reasons for the lack of study of this 'late developer' are that (i) silicon is an indirect bandgap material and (ii) it does not exhibit a linear electro-optic (Pockels) effect. The former condition means that it is difficult to make a laser in silicon based on the intrinsic performance of the material, and consequently, in recent years, researchers have attempted to modify the material to artificially engineer the conditions for lasing to be viable (see, for example, the review text, Jalali B et al 2008 Silicon Lasers in Silicon Photonics: The State of the Art ed G T Reed (New York: Wiley)). The latter condition means that optical modulators are intrinsically less efficient in silicon than in some other materials, particularly when targeting the popular telecommunications wavelengths around 1.55 μm. Therefore researchers have sought alternative

75 FR 70020 - Central Valley Project Improvement Act, Water Management Plans

Science.gov (United States)

2010-11-16

... office on Central Valley Project water conservation best management practices that shall ``* * * develop... DEPARTMENT OF THE INTERIOR Bureau of Reclamation Central Valley Project Improvement Act, Water Management Plans AGENCY: Bureau of Reclamation, Interior ACTION: Notice of Availability. SUMMARY: The...

76 FR 12756 - Central Valley Project Improvement Act, Water Management Plans

Science.gov (United States)

2011-03-08

... office on Central Valley Project water conservation best management practices that shall ``* * * develop... DEPARTMENT OF THE INTERIOR Bureau of Reclamation Central Valley Project Improvement Act, Water Management Plans AGENCY: Bureau of Reclamation, Interior. ACTION: Notice of availability. SUMMARY: The...

77 FR 64544 - Central Valley Project Improvement Act, Water Management Plans

Science.gov (United States)

2012-10-22

... Central Valley Project water conservation best management practices that shall ``develop criteria for... DEPARTMENT OF THE INTERIOR Bureau of Reclamation Central Valley Project Improvement Act, Water Management Plans AGENCY: Bureau of Reclamation, Interior. ACTION: Notice of availability. SUMMARY: The...

76 FR 18542 - Copper Valley Electric Association; Notice of Scoping Document 2 and Soliciting Scoping Comments...

Science.gov (United States)

2011-04-04

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-002] Copper Valley.... Applicant: Copper Valley Electric Association (Copper Valley) d. Name of Project: Allison Creek Project. e.... 791(a)-825(r). g. Applicant Contact: Robert A. Wilkinson, CEO, Copper Valley Electric Association, P.O...

Electronic properties in a two-dimensional disordered electron liquid: Spin-valley interplay

International Nuclear Information System (INIS)

Burmistrov, I. S.; Chtchelkatchev, N. M.

2008-01-01

We report a detailed study of the influence of the spin and valley splittings on such physical observables of the two-dimensional disordered electron liquid as resistivity and spin and valley susceptibilities. We explain qualitatively the nonmonotonic dependence of the resistivity on temperature in the presence of a parallel magnetic field. In the presence of either spin or valley splitting we predict a temperature dependence of the resistivity with two maximum points

Porous silicon-based direct hydrogen sulphide fuel cells.

Science.gov (United States)

Dzhafarov, T D; Yuksel, S Aydin

2011-10-01

In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

Superior Valley Polarization and Coherence of 2s Excitons in Monolayer WSe_{2}.

Science.gov (United States)

Chen, Shao-Yu; Goldstein, Thomas; Tong, Jiayue; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jun

2018-01-26

We report the experimental observation of 2s exciton radiative emission from monolayer tungsten diselenide, enabled by hexagonal boron nitride protected high-quality samples. The 2s luminescence is highly robust and persists up to 150 K, offering a new quantum entity for manipulating the valley degree of freedom. Remarkably, the 2s exciton displays superior valley polarization and coherence than 1s under similar experimental conditions. This observation provides evidence that the Coulomb-exchange-interaction-driven valley-depolarization process, the Maialle-Silva-Sham mechanism, plays an important role in valley excitons of monolayer transition metal dichalcogenides.

Superior Valley Polarization and Coherence of 2 s Excitons in Monolayer WSe2

Science.gov (United States)

Chen, Shao-Yu; Goldstein, Thomas; Tong, Jiayue; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jun

2018-01-01

We report the experimental observation of 2 s exciton radiative emission from monolayer tungsten diselenide, enabled by hexagonal boron nitride protected high-quality samples. The 2 s luminescence is highly robust and persists up to 150 K, offering a new quantum entity for manipulating the valley degree of freedom. Remarkably, the 2 s exciton displays superior valley polarization and coherence than 1 s under similar experimental conditions. This observation provides evidence that the Coulomb-exchange-interaction-driven valley-depolarization process, the Maialle-Silva-Sham mechanism, plays an important role in valley excitons of monolayer transition metal dichalcogenides.

78 FR 21414 - Central Valley Project Improvement Act, Water Management Plans

Science.gov (United States)

2013-04-10

... Valley Project Improvement Act, Water Management Plans AGENCY: Bureau of Reclamation, Interior. ACTION: Notice of availability. SUMMARY: The following Water Management Plans are available for review... establish and administer an office on Central Valley Project water conservation best management practices...

76 FR 54251 - Central Valley Project Improvement Act, Water Management Plans

Science.gov (United States)

2011-08-31

... and administer an office on Central Valley Project water conservation best management practices that... DEPARTMENT OF THE INTERIOR Bureau of Reclamation Central Valley Project Improvement Act, Water Management Plans AGENCY: Bureau of Reclamation, Interior. ACTION: Notice of availability. SUMMARY: The...

75 FR 38538 - Central Valley Project Improvement Act, Water Management Plans

Science.gov (United States)

2010-07-02

... to establish and administer an office on Central Valley Project water conservation best management... DEPARTMENT OF THE INTERIOR Bureau of Reclamation Central Valley Project Improvement Act, Water Management Plans AGENCY: Bureau of Reclamation, Interior. ACTION: Notice of availability. SUMMARY: The...

Silicon based light-emitting materials and devices

International Nuclear Information System (INIS)

Chen Weide

1999-01-01

Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

Directory of Open Access Journals (Sweden)

Kirill O. Bugaev

2012-01-01

Full Text Available Vibrational properties of hydrogenated silicon-rich nitride (SiN:H of various stoichiometry (0.6≤≤1.3 and hydrogenated amorphous silicon (a-Si:H films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130∘C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

Virgin Valley opal district, Humboldt County, Nevada

Science.gov (United States)

Staatz, Mortimer Hay; Bauer, Herman L.

1951-01-01

The Virgin Valley opal district, Humboldt County, Nevada, is near the Oregon-Nevada border in the Sheldon Game Refuge. Nineteen claims owned by Jack and Toni Crane were examined, sampled, and tested radiometrically for uranium. Numerous discontinuous layers of opal are interbedded with a gently-dipping series of vitric tuff and ash which is at least 300 ft thick. The tuff and ash are capped by a dark, vesicular basalt in the eastern part of the area and by a thin layer of terrace qravels in the area along the west side of Virgin Valley. Silicification of the ash and tuff has produced a rock that ranges from partly opalized rock that resembles silicified shale to completely altered rock that is entirely translucent, and consists of massive, brown and pale-green opal. Carnotite, the only identified uranium mineral, occurs as fracture coatings or fine layers in the opal; in places, no uranium minerals are visible in the radioactive opal. The opal layers are irregular in extent and thickness. The exposed length of the layers ranges from 8 to 1, 200 ft or more, and the thickness of the layers ranges from 0. 1 to 3. 9 ft. The uranium content of each opal layer, and of different parts of the same layer, differs widely. On the east side of Virgin Valley four of the seven observed opal layers, nos. 3, 4, 5, and 7, are more radioactive than the average; and the uranium content ranges from 0. 002 to 0. 12 percent. Two samples, taken 5 ft apart across opal layer no. 7, contained 0. 003 and 0. -049 percent uranium. On the west side of the valley only four of the fifteen observed opal layers, nos; 9, , 10, 14, and 15, are more radioactive than the average; and the uranium content ranges from 0. 004 to 0. 047 percent. Material of the highest grade was found in a small discontinuous layer of pale-green opal (no. 4) on the east side of Virgin Valley. The grade of this layer ranged from 0. 027 to 0. 12 percent uranium.

P-type silicon drift detectors

International Nuclear Information System (INIS)

Walton, J.T.; Krieger, B.; Krofcheck, D.; O'Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

1995-06-01

Preliminary results on 16 CM 2 , position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 x l0 6 s -1 is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 μm to 1200 μm. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed

Porous silicon investigated by positron annihilation

International Nuclear Information System (INIS)

Cruz, R.M. de la; Pareja, R.

1989-01-01

The effect of the anodic conversion in silicon single crystals is investigated by positron lifetime measurements. Anodization at constant current induces changes in the positron lifetime spectrum of monocrystalline silicon samples. It is found that theses changes are primarily dependent on the silicon resistivity. The annihilation parameter behaviour of anodized samples, treated at high temperature under reducing conditions, is also investigated. The results reveal that positron annihilation can be a useful technique to characterize porous silicon formed by anodizing as well as to investigate its thermal behaviour. (author)

Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

International Nuclear Information System (INIS)

Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

2006-01-01

Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

77 FR 42722 - Copper Valley Electric Association; Notice of Updated Environmental Analysis Preparation Schedule

Science.gov (United States)

2012-07-20

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-002] Copper Valley...: Original License Application. b. Project No.: 13124-002. c. Applicant: Copper Valley Electric Association (Copper Valley). d. Name of Project: Allison Creek Project. e. Location: On the south side of Port Valdez...

Velocity barrier-controlled of spin-valley polarized transport in monolayer WSe2 junction

Science.gov (United States)

Qiu, Xuejun; Lv, Qiang; Cao, Zhenzhou

2018-05-01

In this work, we have theoretically investigated the influence of velocity barrier on the spin-valley polarized transport in monolayer (ML) WSe2 junction with a large spin-orbit coupling (SOC). Both the spin-valley resolved transmission probabilities and conductance are strong dependent on the velocity barrier, as the velocity barrier decreases to 0.06, a spin-valley polarization of exceeding 90% is observed, which is distinct from the ML MoS2 owing to incommensurable SOC. In addition, the spin-valley polarization is further increased above 95% in a ML WSe2 superlattice, in particular, it's found many extraordinary velocity barrier-dependent transport gaps for multiple barrier due to evanescent tunneling. Our results may open an avenue for the velocity barrier-controlled high-efficiency spin and valley polarizations in ML WSe2-based electronic devices.

Major Matters: Exploration of the Gender Wage Gap among STEM Graduates

OpenAIRE

Lim, Kyung Min

2016-01-01

The gender pay gap has been a persistent issue in American workplaces, and the STEM fields have been no exception (Carnevale, Smith & Melton, 2011). For example, in the Silicon Valley, the heart of high-tech industries, the median salary of workers with a bachelor’s degree was approximately $90,000 for men and $56,000 for women (Silicon Valley Institute for Regional Studies, 2015). Such observations are likely to discourage many young women from pursuing careers in STEM.The majority of STEM w...

アメリカの地域コミュニティとキャリアデザイン風土（その2）米国シリコンバレーにみる地域創生 ―ジョイントベンチャーシリコンバレーと市民企業家―

OpenAIRE

小門, 裕幸

2011-01-01

Silicon Valley is still producing a lot of start−ups which will be leading companies of their time. After the Leman’shock so called ”small hundred” (meaning electric vehicle venture companies) were started in one of which Toyota made an equity investment. Mark Zukckerburg of Facebook moved from Boston to Silicon Valley, Mike Andreessen, co−author of Mosaic (the first widely−used web browser) from Champaign, Illinois, Linus Torvalds, an open source innovator of Linux from Finland. They got tog...

Characterization of Czochralski Silicon Detectors

OpenAIRE

Luukka, Panja-Riina; Haerkoenen, Jaakko

2012-01-01

This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

Ground water in Dale Valley, New York

Science.gov (United States)

Randall, Allan D.

1979-01-01

Dale Valley is a broad valley segment, enlarged by glacial erosion, at the headwaters of Little Tonawanda Creek near Warsaw , New York. A thin, shallow alluvial aquifer immediately underlies the valley floor but is little used. A deeper gravel aquifer, buried beneath many feet of lake deposits, is tapped by several industrial wells. A finite-difference digital model treated the deep aquifer as two-dimensional with recharge and discharge through a confining layer. It was calibrated by simulating (1) natural conditions, (2) an 18-day aquifer test, and (3) 91 days of well-field operation. Streamflow records and model simulations suggest that in moderately wet years such as 1974, a demand of 750 gallons per minute could be met by withdrawal from the creek and from the aquifer without excessive drawdown at production wells or existing domestic wells. With reasonable but unverified model adjustments to simulate an unusually dry year, the model predicts that a demand of 600 gallons per minute could be met from the same sources. Water high in chloride has migrated from bedrock into parts of the deep aquifer. Industrial pumpage, faults in the bedrock, and the natural flow system may be responsible. (Woodard-USGS)

Structure and physical properties of silicon clusters and of vacancy clusters in bulk silicon

International Nuclear Information System (INIS)

Sieck, A.

2000-01-01

In this thesis the growth-pattern of free silicon clusters and vacancy clusters in bulk silicon is investigated. The aim is to describe and to better understand the cluster to bulk transition. Silicon structures in between clusters and solids feature new interesting physical properties. The structure and physical properties of silicon clusters can be revealed by a combination of theory and experiment, only. Low-energy clusters are determined with different optimization techniques and a density-functional based tight-binding method. Additionally, infrared and Raman spectra, and polarizabilities calculated within self-consistent field density-functional theory are provided for the smaller clusters. For clusters with 25 to 35 atoms an analysis of the shape of the clusters and the related mobilities in a buffer gas is given. Finally, the clusters observed in low-temperature experiments are identified via the best match between calculated properties and experimental data. Silicon clusters with 10 to 15 atoms have a tricapped trigonal prism as a common subunit. Clusters with up to about 25 atoms follow a prolate growth-path. In the range from 24 to 30 atoms the geometry of the clusters undergoes a transition towards compact spherical structures. Low-energy clusters with up to 240 atoms feature a bonding pattern strikingly different from the tetrahedral bonding in the solid. It follows that structures with dimensions of several Angstroem have electrical and optical properties different from the solid. The calculated stabilities and positron-lifetimes of vacancy clusters in bulk silicon indicate the positron-lifetimes of about 435 ps detected in irradiated silicon to be related to clusters of 9 or 10 vacancies. The vacancies in these clusters form neighboring hexa-rings and, therefore, minimize the number of dangling bonds. (orig.)

Solar cells with gallium phosphide/silicon heterojunction

Science.gov (United States)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Increased body mass of ducks wintering in California's Central Valley

Science.gov (United States)

Fleskes, Joseph P.; Yee, Julie L.; Yarris, Gregory S.; Loughman, Daniel L.

2016-01-01

Waterfowl managers lack the information needed to fully evaluate the biological effects of their habitat conservation programs. We studied body condition of dabbling ducks shot by hunters at public hunting areas throughout the Central Valley of California during 2006–2008 compared with condition of ducks from 1979 to 1993. These time periods coincide with habitat increases due to Central Valley Joint Venture conservation programs and changing agricultural practices; we modeled to ascertain whether body condition differed among waterfowl during these periods. Three dataset comparisons indicate that dabbling duck body mass was greater in 2006–2008 than earlier years and the increase was greater in the Sacramento Valley and Suisun Marsh than in the San Joaquin Valley, differed among species (mallard [Anas platyrhynchos], northern pintail [Anas acuta], America wigeon [Anas americana], green-winged teal [Anas crecca], and northern shoveler [Anas clypeata]), and was greater in ducks harvested late in the season. Change in body mass also varied by age–sex cohort and month for all 5 species and by September–January rainfall for all except green-winged teal. The random effect of year nested in period, and sometimes interacting with other factors, improved models in many cases. Results indicate that improved habitat conditions in the Central Valley have resulted in increased winter body mass of dabbling ducks, especially those that feed primarily on seeds, and this increase was greater in regions where area of post-harvest flooding of rice and other crops, and wetland area, has increased. Conservation programs that continue to promote post-harvest flooding and other agricultural practices that benefit wintering waterfowl and continue to restore and conserve wetlands would likely help maintain body condition of wintering dabbling ducks in the Central Valley of California.

Electrical properties of pressure quenched silicon by thermal spraying

International Nuclear Information System (INIS)

Tan, S.Y.; Gambino, R.J.; Sampath, S.; Herman, H.

2007-01-01

High velocity thermal spray deposition of polycrystalline silicon film onto single crystal substrates, yields metastable high pressure forms of silicon in nanocrystalline form within the deposit. The phases observed in the deposit include hexagonal diamond-Si, R-8, BC-8 and Si-IX. The peculiar attribute of this transformation is that it occurs only on orientation silicon substrate. The silicon deposits containing the high pressure phases display a substantially higher electrical conductivity. The resistivity profile of the silicon deposit containing shock induced metastable silicon phases identified by X-ray diffraction patterns. The density of the pressure induced polymorphic silicon is higher at deposit/substrate interface. A modified two-layer model is presented to explain the resistivity of the deposit impacted by the pressure induced polymorphic silicon generated by the thermal spraying process. The pressure quenched silicon deposits on the p - silicon substrate, with or without metastable phases, display the barrier potential of about 0.72 eV. The measured hall mobility value of pressure quenched silicon deposits is in the range of polycrystalline silicon. The significance of this work lies in the fact that the versatility of thermal spray may enable applications of these high pressure forms of silicon

Damage-free laser patterning of silicon nitride on textured crystalline silicon using an amorphous silicon etch mask for Ni/Cu plated silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Bailly, Mark S., E-mail: mbailly@asu.edu; Karas, Joseph; Jain, Harsh; Dauksher, William J.; Bowden, Stuart

2016-08-01

We investigate the optimization of laser ablation with a femtosecond laser for direct and indirect removal of SiN{sub x} on alkaline textured c-Si. Our proposed resist-free indirect removal process uses an a-Si:H etch mask and is demonstrated to have a drastically improved surface quality of the laser processed areas when compared to our direct removal process. Scanning electron microscope images of ablated sites show the existence of substantial surface defects for the standard direct removal process, and the reduction of those defects with our proposed process. Opening of SiN{sub x} and SiO{sub x} passivating layers with laser ablation is a promising alternative to the standard screen print and fire process for making contact to Si solar cells. The potential for small contacts from laser openings of dielectrics coupled with the selective deposition of metal from light induced plating allows for high-aspect-ratio metal contacts for front grid metallization. The minimization of defects generated in this process would serve to enhance the performance of the device and provides the motivation for our work. - Highlights: • Direct laser removal of silicon nitride (SiN{sub x}) damages textured silicon. • Direct laser removal of amorphous silicon (a-Si) does not damage textured silicon. • a-Si can be used as a laser patterned etch mask for SiN{sub x}. • Chemically patterned SiN{sub x} sites allow for Ni/Cu plating.

Electrochemical properties of ion implanted silicon