WorldWideScience

Sample records for silicon valley tuus

  1. Silicon Valley: Planet Startup

    NARCIS (Netherlands)

    Dr. P. Ester; dr. A. Maas

    2016-01-01

    For decades now, Silicon Valley has been the home of the future. It's the birthplace of the world's most successful high-tech companies-including Apple, Yahoo, Google, Facebook, Twitter, and many more. So what's the secret? What is it about Silicon Valley that fosters entrepreneurship and

  2. Bringing Silicon Valley inside.

    Science.gov (United States)

    Hamel, G

    1999-01-01

    In 1998, Silicon Valley companies produced 41 IPOs, which by January 1999 had a combined market capitalization of $27 billion--that works out to $54,000 in new wealth creation per worker in a single year. Multiply the number of employees in your company by $54,000. Did your business create that much new wealth last year? Half that amount? It's not a group of geniuses generating such riches. It's a business model. In Silicon Valley, ideas, capital, and talent circulate freely, gathering into whatever combinations are most likely to generate innovation and wealth. Unlike most traditional companies, which spend their energy in resource allocation--a system designed to avoid failure--the Valley operates through resource attraction--a system that nurtures innovation. In a traditional company, people with innovative ideas must go hat in hand to the guardians of the old ideas for funding and for staff. But in Silicon Valley, a slew of venture capitalists vie to attract the best new ideas, infusing relatively small amounts of capital into a portfolio of ventures. And talent is free to go to the companies offering the most exhilarating work and the greatest potential rewards. It should actually be easier for large, traditional companies to set up similar markets for capital, ideas, and talent internally. After all, big companies often already have extensive capital, marketing, and distribution resources, and a first crack at the talent in their own ranks. And some of them are doing it. The choice is yours--you can do your best to make sure you never put a dollar of capital at risk, or you can tap into the kind of wealth that's being created every day in Silicon Valley.

  3. Meie ingel Silicon Valleys / Raigo Neudorf

    Index Scriptorium Estoniae

    Neudorf, Raigo

    2008-01-01

    Ettevõtluse Arendamise Sihtasutuse esinduse töölepanekust USAs Silicon Valleys räägib esinduse juht Andrus Viirg. Vt. ka: Eestlasi leidub San Franciscos omajagu; Muljetavaldav karjäär; USAga ammune tuttav

  4. Meie mees Silicon Valleys / Kertu Ruus

    Index Scriptorium Estoniae

    Ruus, Kertu, 1977-

    2007-01-01

    Ilmunud ka: Delovõje Vedomosti 5. dets. lk. 4. Peaminister Andrus Ansip avas Eesti Ettevõtluse Sihtasutuse esinduse Silicon Valley pealinnas San Joses. Vt. samas: Ränioru kliima on tehnoloogiasõbralik; Andrus Viirg

  5. Why do European companies have Innovation Hubs in Silicon Valley

    DEFF Research Database (Denmark)

    Berger, Andreas; Brem, Alexander

    2017-01-01

    Innovation hubs are gaining high attention in recent years, especially from European companies. Silicon Valley has been deemed as one of the most attractive and successful environments for establishing innovation hubs. This article highlights examples of companies from Europe that made the step t...... to California—namely, Volkswagen, Swisscom, BMW, Axel Springer, Munich Re, and Innogy SE (RWE Group). Based on these companies’ experiences, recommendations are given on how companies might approach a setup in Silicon Valley for long-term success....

  6. Spatially resolving valley quantum interference of a donor in silicon.

    Science.gov (United States)

    Salfi, J; Mol, J A; Rahman, R; Klimeck, G; Simmons, M Y; Hollenberg, L C L; Rogge, S

    2014-06-01

    Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions of valleys in momentum space. Addressable single-qubit and two-qubit operations in silicon require that qubits are placed near interfaces, modifying the valley degrees of freedom associated with these quantum superpositions and strongly influencing qubit relaxation and exchange processes. Yet to date, spectroscopic measurements have only probed wavefunctions indirectly, preventing direct experimental access to valley population, donor position and environment. Here we directly probe the probability density of single quantum states of individual subsurface donors, in real space and reciprocal space, using scanning tunnelling spectroscopy. We directly observe quantum mechanical valley interference patterns associated with linear superpositions of valleys in the donor ground state. The valley population is found to be within 5% of a bulk donor when 2.85 ± 0.45 nm from the interface, indicating that valley-perturbation-induced enhancement of spin relaxation will be negligible for depths greater than 3 nm. The observed valley interference will render two-qubit exchange gates sensitive to atomic-scale variations in positions of subsurface donors. Moreover, these results will also be of interest for emerging schemes proposing to encode information directly in valley polarization.

  7. How Silicon Valley Journalists Talk about: Independence in Innovation Coverage

    DEFF Research Database (Denmark)

    Mogensen, Kirsten; Nordfors, David

    2010-01-01

    Silicon Valley has become known for innovations that have led to substantial changes for citizens around the world. In 1960s’-80s’ the innovation had to do with computers and electronics, 1990s-00s’ it was on Internet and Web services. Since the later part of the 00’s, clean tech has emerged......-structured interviews with journalists who cover the innovation economy in Silicon Valley, the paper seeks to understand the professional challenges the network structure create for journalists and the strategies they apply. Comparing the results with previous research in journalism norms, this study suggests...

  8. Summary Robert Noyce and the invention of Silicon Valley

    CERN Document Server

    2014-01-01

    This work offers a summary of the book "THE MAN BEHIND THE MICROCHIP: Robert Noyce and the Invention of Silicon Valley""by Leslie Berlin.The Man behind the Microchip is Leslie Berlin's first book. This author is project historian for the Silicon Valley Archives, a division of the Stanford University Department of Special Collections. This book tells the story of a giant of the high-tech industry: the multimillionaire Bob Noyce. This co-founder of Fairchild Semiconductor and Intel co-invented the integrated circuit which became the electronic heart of every modern computer, automobile, advance

  9. HBO-I on tour in Silicon Valley

    NARCIS (Netherlands)

    Ir. Deny Smeets; Drs. Miranda W Valkenburg

    2005-01-01

    Wat is 'hot' en wat is 'not' in de ict? Dat was 'in a nutshell' de reden voor het HBO-I om een studiereis te maken naar het Mekka voor ict'ers: Silicon Valley. Voor VS-verhoudingen een klein gebied met relatief veel belangrijke ict-bedrijven: SUN, Intel, Oracle, Hewlett-Packard. En twee van de beste

  10. Valley blockade in a silicon double quantum dot

    Science.gov (United States)

    Perron, Justin K.; Gullans, Michael J.; Taylor, Jacob M.; Stewart, M. D.; Zimmerman, Neil M.

    2017-11-01

    Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of dc transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed current in DQDs) at positive and negative bias voltages we find a systematic asymmetry in the size of the bias triangles at the two bias polarities. Asymmetries of this nature are associated with blocked tunneling events due to the occupation of a metastable state. Several features of our data lead us to conclude that the states involved are not simple spin states. Rather, we develop a model based on selective filling of valley states in the DQD that is consistent with all of the qualitative features of our data.

  11. W. W. Hansen, Microwave Physics, and Silicon Valley

    Science.gov (United States)

    Leeson, David

    2009-03-01

    The Stanford physicist W. W. Hansen (b. 1909, AB '29 and PhD '32, MIT post-doc 1933-4, Prof. physics '35-'49, d. 1949) played a seminal role in the development of microwave electronics. His contributions underlay Silicon Valley's postwar ``microwave'' phase, when numerous companies, acknowledging their unique scientific debt to Hansen, flourished around Stanford University. As had the prewar ``radio'' companies, they furthered the regional entrepreneurial culture and prepared the ground for the later semiconductor and computer developments we know as Silicon Valley. In the 1930's, Hansen invented the cavity resonator. He applied this to his concept of the radio-frequency (RF) linear accelerator and, with the Varian brothers, to the invention of the klystron, which made microwave radar practical. As WWII loomed, Hansen was asked to lecture on microwaves to the physicists recruited to the MIT Radiation Laboratory. Hansen's ``Notes on Microwaves,'' the Rad Lab ``bible'' on the subject, had a seminal impact on subsequent works, including the Rad Lab Series. Because of Hansen's failing health, his postwar work, and MIT-Stanford rivalries, the Notes were never published, languishing as an underground classic. I have located remaining copies, and will publish the Notes with a biography honoring the centenary of Hansen's birth. After the war, Hansen founded Stanford's Microwave Laboratory to develop powerful klystrons and linear accelerators. He collaborated with Felix Bloch in the discovery of nuclear magnetic resonance. Hansen experienced first-hand Stanford's evolution from its depression-era physics department to corporate, then government funding. Hansen's brilliant career was cut short by his death in 1949, after his induction in the National Academy of Sciences. His ideas were carried on in Stanford's two-mile long linear accelerator and the development of Silicon Valley.

  12. Silicon Valley: Planet Startup : Disruptive Innovation, Passionate Entrepreneurship & High-tech Startups

    NARCIS (Netherlands)

    Dr. P. Ester; dr. A. Maas

    2016-01-01

    For decades now, Silicon Valley has been the home of the future. It's the birthplace of the world's most successful high-tech companies-including Apple, Yahoo, Google, Facebook, Twitter, and many more. So what's the secret? What is it about Silicon Valley that fosters entrepreneurship and

  13. Electron spin resonance and spin-valley physics in a silicon double quantum dot.

    Science.gov (United States)

    Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen

    2014-05-14

    Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

  14. Coherent manipulation of valley states at multiple charge configurations of a silicon quantum dot device.

    Science.gov (United States)

    Schoenfield, Joshua S; Freeman, Blake M; Jiang, HongWen

    2017-07-05

    Qubits based on silicon quantum dots are emerging as leading candidates for the solid-state implementation of quantum information processing. In silicon, valley states represent a degree of freedom in addition to spin and charge. Characterizing and controlling valley states is critical for the encoding and read-out of electrons-in-silicon-based qubits. Here, we report the coherent manipulation of a qubit, which is based on the two valley states of an electron confined in a silicon quantum dot. We carry out valley qubit operations at multiple charge configurations of the double quantum dot device. The dependence of coherent oscillations on pulse excitation level and duration allows us to map out the energy dispersion as a function of detuning as well as the phase coherence time of the valley qubit. The coherent manipulation also provides a method of measuring valley splittings that are too small to probe with conventional methods.Silicon quantum dots provide a promising platform for quantum computing based on manipulation of electron degrees of freedom in a well-characterized environment. Here, the authors demonstrate coherent control of electron valley states, yielding an accurate determination of the valley splitting.

  15. Clustering in ICT: From Route 128 to Silicon Valley, from DEC to Google, from Hardware to Content

    OpenAIRE

    Hulsink, W.; Manuel, D.; Bouwman, H.

    2007-01-01

    textabstractOne of the pioneers in academic entrepreneurship and high-tech clustering is MIT and the Route 128/Boston region. Silicon Valley centered around Stanford University was originally a fast follower and only later emerged as a scientific and industrial hotspot. Several technology and innovation waves, have shaped Silicon Valley over all the years. The initial regional success of Silicon Valley started with electro-technical instruments and defense applications in the 1940s and 1950s ...

  16. The man behind the microchip Robert Noyce and the invention of Silicon Valley

    CERN Document Server

    Berlin, Leslie

    2005-01-01

    Robert Noyce was a brilliant inventor, a leading entrepreneur and a daring risk taker, who piloted his own jets and skied mountains accessible only by helicopter. This book captures not only this colorful individual, but also the vibrant interplay of technology, business, money, politics and culture that defines the Silicon Valley.

  17. Specters of Waste in India's "Silicon Valley": The Underside of Bangalore's Hi-Tech Economy

    Science.gov (United States)

    Narayanareddy, Rajyashree

    2011-01-01

    The southern Indian city of Bangalore is extolled as India's "Silicon Valley," emerging over the past decade as a premier site for capital flows into India's Information Technology (IT) sector. In the dominant narrative of globalization Bangalore is lauded as an aspiring "global city" that attracts sizeable quantities of…

  18. Educating Silicon Valley: Corporate Education Reform and the Reproduction of the Techno-Economic Revolution

    Science.gov (United States)

    Williamson, Ben

    2017-01-01

    Silicon Valley's high-tech companies, tech-philanthropists, startups, and culture of venture capital are "the centre of a techno-economic revolution" that is "now spreading outwards across the world, with major societal effects and implications" (Duff 2016, 5). In this article, Ben Williamson traces and maps how education is…

  19. THE ROLE OF SOCIAL NETWORKS IN THE REGIONAL DEVELOPMENT: THE CASE OF SILICON VALLEY

    Directory of Open Access Journals (Sweden)

    MURAT ÇETİN

    2013-06-01

    Full Text Available Social capital has commonly been discussed in recent years from the perspective of sociology, economics and political science. Social capital defines the structure of social relations among economic actors in a region. Regional development depends directly on the level of actors’ social capital. This study focuses on the importance of social networks, an important factor of social capital, in the economy of Silicon Valley. These networks improve many-sided and intensive social relations and collaborative activities within and among universities, research centers, venture capitalists, law firms, industrial firms and investment banks in the region. In Silicon Valley, social networks have special importance in the movement of labor, the gaining of influence and power, and the actual production of innovation. Thus, social networks can be evaluated as a driver of economic development.

  20. The Key Success Factors of Penang as the Silicon Valley of the East

    OpenAIRE

    Wahyuni, Sari; Anoviar, Alia Noor; Santoso, Anom Jati

    2012-01-01

    The aims of this study is to analyze the key success factors of SEZs in Malaysia especially Penang as a centre of investment which is recognised as the Silicon Valley of the East. By employing qualitative research, the result of this study shows that Penang sources of competitiveness laid on their strategic location (close to airport and harbour), well equipped infrastructure, transparency in custom, tax offices, good education to support industry, supply chain, IT as well as the availabilit...

  1. Predicting the valley physics of silicon quantum dots directly from a device layout

    Science.gov (United States)

    Gamble, John King; Harvey-Collard, Patrick; Jacobson, N. Tobias; Bacewski, Andrew D.; Nielsen, Erik; Montaño, Inès; Rudolph, Martin; Carroll, Malcolm S.; Muller, Richard P.

    Qubits made from electrostatically-defined quantum dots in Si-based systems are excellent candidates for quantum information processing applications. However, the multi-valley structure of silicon's band structure provides additional challenges for the few-electron physics critical to qubit manipulation. Here, we present a theory for valley physics that is predictive, in that we take as input the real physical device geometry and experimental voltage operation schedule, and with minimal approximation compute the resulting valley physics. We present both effective mass theory and atomistic tight-binding calculations for two distinct metal-oxide-semiconductor (MOS) quantum dot systems, directly comparing them to experimental measurements of the valley splitting. We conclude by assessing these detailed simulations' utility for engineering desired valley physics in future devices. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. The authors gratefully acknowledge support from the Sandia National Laboratories Truman Fellowship Program, which is funded by the Laboratory Directed Research and Development (LDRD) Program.

  2. Subsurface and petroleum geology of the southwestern Santa Clara Valley ("Silicon Valley"), California

    Science.gov (United States)

    Stanley, Richard G.; Jachens, Robert C.; Lillis, Paul G.; McLaughlin, Robert J.; Kvenvolden, Keith A.; Hostettler, Frances D.; McDougall, Kristin A.; Magoon, Leslie B.

    2002-01-01

    Gravity anomalies, historical records of exploratory oil wells and oil seeps, new organic-geochemical results, and new stratigraphic and structural data indicate the presence of a concealed, oil-bearing sedimentary basin beneath a highly urbanized part of the Santa Clara Valley, Calif. A conspicuous isostatic-gravity low that extends about 35 km from Palo Alto southeastward to near Los Gatos reflects an asymmetric, northwest-trending sedimentary basin comprising low-density strata, principally of Miocene age, that rest on higher-density rocks of Mesozoic and Paleogene(?) age. Both gravity and well data show that the low-density rocks thin gradually to the northeast over a distance of about 10 km. The thickest (approx 4 km thick) accumulation of low-density material occurs along the basin's steep southwestern margin, which may be controlled by buried, northeast-dipping normal faults that were active during the Miocene. Movement along these hypothetical normal faults may been contemporaneous (approx 17–14 Ma) with sedimentation and local dacitic and basaltic volcanism, possibly in response to crustal extension related to passage of the northwestward-migrating Mendocino triple junction. During the Pliocene and Quaternary, the normal faults and Miocene strata were overridden by Mesozoic rocks, including the Franciscan Complex, along northeastward-vergent reverse and thrust faults of the Berrocal, Shannon, and Monte Vista Fault zones. Movement along these fault zones was accompanied by folding and tilting of strata as young as Quaternary and by uplift of the modern Santa Cruz Mountains; the fault zones remain seismically active. We attribute the Pliocene and Quaternary reverse and thrust faulting, folding, and uplift to compression caused by local San Andreas Fault tectonics and regional transpression along the Pacific-North American Plate boundary. Near the southwestern margin of the Santa Clara Valley, as many as 20 exploratory oil wells were drilled between 1891

  3. Silicon Valley as an Early Adopter for On-Demand Civil VTOL Operations

    Science.gov (United States)

    Antcliff, Kevin R.; Moore, Mark D.; Goodrich, Kenneth H.

    2016-01-01

    With high incomes, long commutes, severe ground geographic constraints, severe highway congestion during peak commute times, high housing costs, and near perfect year-round weather, the Silicon Valley is positioned to be an excellent early adopter market for emerging aviation On-Demand Mobility transportation solutions. Prior efforts have attempted to use existing aviation platforms (helicopters or General Aviation aircraft) with existing infrastructure solutions, or only investigated new vehicle platforms without understanding how to incorporate new vehicle types into existing built-up communities. Research has been performed with the objective of minimizing door-to-door time for "Hyper Commuters" (frequent, long-distance commuters) in the Silicon Valley through the development of new helipad infrastructure for ultra-low noise Vertical Takeoff and Landing (VTOL) aircraft. Current travel times for chosen city-pairs across urban and suburban commutes are compared to future mobility concepts that provide significantly higher utilization and productivity to yield competitive operating costs compared to existing transportation choices. Helipads are introduced near current modes of transportation and infrastructure for ease-of-access, and maximizing proximity. Strategies for both private and public infrastructure development are presented that require no new land purchase while minimizing community noise exposure. New VTOL concepts are introduced with cruise speeds of 200 mph, which yield a greater than three times improvement in overall door-to-door time when compared to current automobiles, and in some cases, improvements of up to 6 times lower trip times.

  4. Clustering in ICT: From Route 128 to Silicon Valley, from DEC to Google, from Hardware to Content

    NARCIS (Netherlands)

    W. Hulsink (Wim); D. Manuel; H. Bouwman (Harry)

    2007-01-01

    textabstractOne of the pioneers in academic entrepreneurship and high-tech clustering is MIT and the Route 128/Boston region. Silicon Valley centered around Stanford University was originally a fast follower and only later emerged as a scientific and industrial hotspot. Several technology and

  5. Application Of Geowall Technology To The Analysis Of A Three Dimensional Geologic Map Of The Santa Clara (Silicon) Valley, California

    Science.gov (United States)

    Phelps, G. A.; Jachens, R. C.; Wentworth, C. M.; Langenheim, V. E.; Hanson, R. T.; Faunt, C. C.

    2003-12-01

    Geowall, a stereo projection system suitable for meetings and conferences, is being used to visualize, understand, interpret, and test a three-dimensional geologic map of the Santa Clara (Silicon) Valley, southern San Francisco Bay area, California. Geowall*, developed at the Electronic Visualization Laboratory associated with the University of Illinois, uses dual polarized images projected onto a polarization-preserving screen to create the illusion of three dimensions when viewed through polarized glasses. The map of Santa Clara Valley encompasses a 45 by 45 km area, extends to a depth of 14 km, and includes the northern Santa Clara Valley and surrounding hillsides between the active Calaveras and San Andreas faults. It is currently divided by several major faults into tectonic blocks, within which 9 units represent the Cenozoic and Mesozoic sections. Many of these units will be subdivided as the map evolves. The map is being constructed in EarthVision*(TM, Dynamic Graphics, Inc.), a geologic modeling software that includes three dimensional rendering and model manipulation capabilities. Earthvision generates data and model images of which the entire, or only portions of the model, can be viewed in three dimensions. The geowall presentation will explore the datasets and three-dimensional geologic map of Santa Clara Valley and structures defined by geologic mapping, stratigraphy, hydrology, potential field geophysics, seismic reflection, and earthquake seismicity. The map is the result of a collaborative effort among several earth science disciplines, and as such requires the integration of diverse datasets and the communication of diverse ideas. The geowall is particularly effective at promoting group discussion and analysis of the three-dimensional map, because the map can be displayed in a group setting as a 6x6 ft., stereo image. The spatial relationships of the datasets are easily seen, and the map can be deconstructed and particular relationships isolated

  6. Pilot evaluation of electricity-reliability and power-quality monitoring in California's Silicon Valley with the I-Grid(R) system

    Energy Technology Data Exchange (ETDEWEB)

    Eto, Joseph; Divan, Deepak; Brumsickle, William

    2004-02-01

    Power-quality events are of increasing concern for the economy because today's equipment, particularly computers and automated manufacturing devices, is susceptible to these imperceptible voltage changes. A small variation in voltage can cause this equipment to shut down for long periods, resulting in significant business losses. Tiny variations in power quality are difficult to detect except with expensive monitoring equipment used by trained technicians, so many electricity customers are unaware of the role of power-quality events in equipment malfunctioning. This report describes the findings from a pilot study coordinated through the Silicon Valley Manufacturers Group in California to explore the capabilities of I-Grid(R), a new power-quality monitoring system. This system is designed to improve the accessibility of power-quality in formation and to increase understanding of the growing importance of electricity reliability and power quality to the economy. The study used data collected by I-Grid sensors at seven Silicon Valley firms to investigate the impacts of power quality on individual study participants as well as to explore the capabilities of the I-Grid system to detect events on the larger electricity grid by means of correlation of data from the sensors at the different sites. In addition, study participants were interviewed about the value they place on power quality, and their efforts to address electricity-reliability and power-quality problems. Issues were identified that should be taken into consideration in developing a larger, potentially nationwide, network of power-quality sensors.

  7. Valley fever

    Science.gov (United States)

    ... especially the first trimester) People of Native American, African, or Philippine descent may also get more severe ... that causes Valley fever) Chest x-ray Sputum culture Sputum smear (KOH test) Tests done for more ...

  8. Valley Fever

    Science.gov (United States)

    ... loss Headache Valley fever Symptoms & causes Diagnosis & treatment Advertisement Mayo Clinic does not endorse companies or products. ... a Job Site Map About This Site Twitter Facebook Google YouTube Pinterest Mayo Clinic is a not- ...

  9. Evidence for an oil-bearing sedimentary basin of probable Miocene age beneath {open_quotes}Silicon Valley,{close_quotes} California

    Energy Technology Data Exchange (ETDEWEB)

    Standley, R.G.; Jachens, R.C.; Kvenvolden, K.A. [Geological Survey, Menlo Park, CA (United States)] [and others

    1996-12-31

    Gravity anomalies, records from historical oil wells, and new organic geochemical results indicate the presence of a concealed sedimentary basin of probable Miocene age beneath a densely populated part of the Santa Clara Valley. A prominent isostatic gravity low extends about 35 km from Palo Alto to near Los Gatos and reflects an asymmetric, northwest-trending sedimentary basin comprising low-density strata that rest on higher-density rocks of the Franciscan Complex. Both gravity and well data show that the low-density rocks thin gradually to the northeast over a distance of about 10 km. The thickest basin fill (about 3 km) occurs along the basin`s steep southwestern margin, which evidently is controlled by northwest-trending, southwest-dipping reverse and thrust faults of the seismically active Berrocal, Shannon, and Monte Vista fault systems. Near surface traces of these faults in Los Gatos, at least 12 wells were drilled between 1891 and 1929 to total depths as great as 840 m. No lithologic or paleontologic samples are available from the wells, but drillers logs indicate thick intervals of brown shale and sandstone resembling nearby outcrops of the Miocene Monterey Formation. Small amounts of oil and gas were encountered in several wells, but no commercial production was established. Oil from a well in Los Gatos is highly biodegraded, contains biomarkers commonly found in oils derived from the Monterey Formation, and yields a stable carbon isotopic ({delta}{sup 13}C{sub PDB}) composition of -23.32{per_thousand}, suggesting derivation from a Miocene source. Oil in mercury ore from the nearby New Almaden mine is slightly biodegraded, thermally altered, and shows a {delta}{sup 13}C PDB value of -24.70{per_thousand}, indicating a source different from that of the Los Gatos oil and perhaps of Miocene or Cretaceous age.

  10. Evidence for an oil-bearing sedimentary basin of probable Miocene age beneath [open quotes]Silicon Valley,[close quotes] California

    Energy Technology Data Exchange (ETDEWEB)

    Standley, R.G.; Jachens, R.C.; Kvenvolden, K.A. (Geological Survey, Menlo Park, CA (United States)) (and others)

    1996-01-01

    Gravity anomalies, records from historical oil wells, and new organic geochemical results indicate the presence of a concealed sedimentary basin of probable Miocene age beneath a densely populated part of the Santa Clara Valley. A prominent isostatic gravity low extends about 35 km from Palo Alto to near Los Gatos and reflects an asymmetric, northwest-trending sedimentary basin comprising low-density strata that rest on higher-density rocks of the Franciscan Complex. Both gravity and well data show that the low-density rocks thin gradually to the northeast over a distance of about 10 km. The thickest basin fill (about 3 km) occurs along the basin's steep southwestern margin, which evidently is controlled by northwest-trending, southwest-dipping reverse and thrust faults of the seismically active Berrocal, Shannon, and Monte Vista fault systems. Near surface traces of these faults in Los Gatos, at least 12 wells were drilled between 1891 and 1929 to total depths as great as 840 m. No lithologic or paleontologic samples are available from the wells, but drillers logs indicate thick intervals of brown shale and sandstone resembling nearby outcrops of the Miocene Monterey Formation. Small amounts of oil and gas were encountered in several wells, but no commercial production was established. Oil from a well in Los Gatos is highly biodegraded, contains biomarkers commonly found in oils derived from the Monterey Formation, and yields a stable carbon isotopic ([delta][sup 13]C[sub PDB]) composition of -23.32[per thousand], suggesting derivation from a Miocene source. Oil in mercury ore from the nearby New Almaden mine is slightly biodegraded, thermally altered, and shows a [delta][sup 13]C PDB value of -24.70[per thousand], indicating a source different from that of the Los Gatos oil and perhaps of Miocene or Cretaceous age.

  11. An Experiment in Teletraining in Silicon Valley.

    Science.gov (United States)

    Rose, D. Candy; Capell, Joyce

    1986-01-01

    Instructional Television Fixed Service (ITFS) instruction was piloted to test the viability of a cooperative system of shared instruction that could be cost-effective and efficient, reducing unnecessary duplication of courses taught. Results of the 1984 pilot show that ITFS was successful based on participants' (industry employees and the public)…

  12. From Silicon Valley to Phoenix Industries

    Science.gov (United States)

    Puukka, Jaana

    2009-01-01

    As university leaders have long argued, the contribution of higher education to national and regional economies is considerable. Although the importance of universities in their local economies is not usually contested, much more should and could be done to take full advantage of higher education in regional and city development. Why have the…

  13. MOOCs and the Silicon Valley Narrative

    Science.gov (United States)

    Weller, Martin

    2015-01-01

    Massive open online courses (MOOCs) have generated considerable media interest, more than other education initiatives such as Open Education Resources (OERs). In this article the author argues that this can be seen as an example of the battle for narrative in open education. MOOCs attracted media interest because they appealed to broader…

  14. Valijate tahe Tallinnas on taastatud / Marika Tuus

    Index Scriptorium Estoniae

    Tuus, Marika, 1951-

    2005-01-01

    Kuigi ERL esitas oma kongressil vasakerakondade ühinemise idee, pole senini sõnadest tegudeni jõutud. Kommenteerides Jaak Alliku esinemist telesaates "Terevisioon" 16. märtsil, ütleb autor, et ERL-il polnud koalitsioonivahetusel Tallinnas midagi kaotada, kuna rahvas ERL-ile Tallinna volikokku mandaati ei andnud

  15. Tõde pensionide kojukande kohta / Marika Tuus

    Index Scriptorium Estoniae

    Tuus, Marika, 1951-

    2008-01-01

    Pensionide kojukande muudatustest ning vastuseks 28. oktoobri ajalehes ilmunud Heljo Pikhofi artiklile "Pensioniraha jõuab igaüheni". Ilmunud ka Harju Ekspress 7. nov. 2008, lk. 9 ; Põhjarannik 6. nov. 2008, lk. 2 ; Võrumaa Teataja 8. nov. 2008, lk. 2 ; Pärnu Postimees 6. nov. 2008, lk. 11 ; Vooremaa 13. nov. 2008, lk. 2 ; Virumaa Teataja 21. nov. 2008, lk. 11, pealkiri kujul: veel pensionide kojukandest ; Sõnumitooja 12. nov. 2008, lk. 2

  16. Valley of the unicorns: consumer genomics, venture capital and digital disruption

    OpenAIRE

    Hogarth, Stuart James

    2017-01-01

    Drawing on the sociology of expectations and sociology of conventions, this paper explores issues of worth and value in the bioeconomy, and the promissory character of contemporary capitalism. Arguing that the literature on biocapital has paid insufficient attention to geographical differentiation in capital accumulation strategies, this paper situates the consumer genomics firm 23andme in the entrepreneurial culture of Silicon Valley. The paper suggests that in Silicon Valley the relationshi...

  17. Energy valley in transition

    NARCIS (Netherlands)

    Verwayen, Barbara

    2006-01-01

    The Energy Valley foundation was born in 2004. It functions as a catalyst and platform for private and public organisations. It has a supporting and facilitating role in realising projects on energy conservation and sustainable energy. The Energy Valley a

  18. Pathways to High-tech Valleys and Research Triangles

    NARCIS (Netherlands)

    Hulsink, W.; Dons, H.

    2008-01-01

    Silicon Valley and the industrial districts of Italy, where shared identity, superior skills, regional specialization and trust-based networking among local firms have produced dynamic and flexible ecosystems, are inspiring examples of the successful promotion of thriving technology and business

  19. Hybrid spin and valley quantum computing with singlet-triplet qubits.

    Science.gov (United States)

    Rohling, Niklas; Russ, Maximilian; Burkard, Guido

    2014-10-24

    The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over the valley state opens new possibilities for quantum information processing. Combining qubits encoded in the singlet-triplet subspace of spin and valley states allows for universal QC using a universal two-qubit gate directly provided by the exchange interaction. We show how spin and valley qubits can be separated in order to allow for single-qubit rotations.

  20. Hot Electron Injection into Uniaxially Strained Silicon

    Science.gov (United States)

    Kim, Hyun Soo

    In semiconductor spintronics, silicon attracts great attention due to the long electron spin lifetime. Silicon is also one of the most commonly used semiconductor in microelectronics industry. The spin relaxation process of diamond crystal structure such as silicon is dominant by Elliot-Yafet mechanism. Yafet shows that intravalley scattering process is dominant. The conduction electron spin lifetime measured by electron spin resonance measurement and electronic measurement using ballistic hot electron method well agrees with Yafet's theory. However, the recent theory predicts a strong contribution of intervalley scattering process such as f-process in silicon. The conduction band minimum is close the Brillouin zone edge, X point which causes strong spin mixing at the conduction band. A recent experiment of electric field-induced hot electron spin relaxation also shows the strong effect of f-process in silicon. In uniaxially strained silicon along crystal axis [100], the suppression of f-process is predicted which leads to enhance electron spin lifetime. By inducing a change in crystal structure due to uniaxial strain, the six fold degeneracy becomes two fold degeneracy, which is valley splitting. As the valley splitting increases, intervalley scattering is reduced. A recent theory predicts 4 times longer electron spin lifetime in 0.5% uniaxially strained silicon. In this thesis, we demonstrate ballistic hot electron injection into silicon under various uniaxial strain. Spin polarized hot electron injection under strain is experimentally one of the most challenging part to measure conduction electron spin lifetime in silicon. Hot electron injection adopts tunnel junction which is a thin oxide layer between two conducting materials. Tunnel barrier, which is an oxide layer, is only 4 ˜ 5 nm thick. Also, two conducting materials are only tens of nanometer. Therefore, under high pressure to apply 0.5% strain on silicon, thin films on silicon substrate can be easily

  1. Haemoragisk Rift Valley Fever

    DEFF Research Database (Denmark)

    Fabiansen, Christian; Thybo, Søren

    2007-01-01

    A case of fatal hemorrhagic Rift Valley fever during an epidemic in Kenya's North Eastern Province in January 2007 is described.......A case of fatal hemorrhagic Rift Valley fever during an epidemic in Kenya's North Eastern Province in January 2007 is described....

  2. Geometry of Valley Growth

    CERN Document Server

    Petroff, Alexander P; Abrams, Daniel M; Lobkovsky, Alexander E; Kudrolli, Arshad; Rothman, Daniel H

    2011-01-01

    Although amphitheater-shaped valley heads can be cut by groundwater flows emerging from springs, recent geological evidence suggests that other processes may also produce similar features, thus confounding the interpretations of such valley heads on Earth and Mars. To better understand the origin of this topographic form we combine field observations, laboratory experiments, analysis of a high-resolution topographic map, and mathematical theory to quantitatively characterize a class of physical phenomena that produce amphitheater-shaped heads. The resulting geometric growth equation accurately predicts the shape of decimeter-wide channels in laboratory experiments, 100-meter wide valleys in Florida and Idaho, and kilometer wide valleys on Mars. We find that whenever the processes shaping a landscape favor the growth of sharply protruding features, channels develop amphitheater-shaped heads with an aspect ratio of pi.

  3. Intermontane valley fills

    OpenAIRE

    Mey, Jürgen (Diplom-Geologe)

    2017-01-01

    Sedimentary valley fills are a widespread characteristic of mountain belts around the world. They transiently store material over time spans ranging from thousands to millions of years and therefore play an important role in modulating the sediment flux from the orogen to the foreland and to oceanic depocenters. In most cases, their formation can be attributed to specific fluvial conditions, which are closely related to climatic and tectonic processes. Hence, valley-fill deposits constitute v...

  4. Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, T., E-mail: t.kobayashi@unsw.edu.au; Heijden, J. van der; House, M. G.; Hile, S. J.; Asshoff, P.; Simmons, M. Y.; Rogge, S. [Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney 2052 New South Wales (Australia); Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Vinet, M. [Université Grenoble-Alpes and CEA, LETI, MINATEC, 38000 Grenoble (France)

    2016-04-11

    We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO{sub 2} interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.

  5. Inexpensive transparent nanoelectrode for crystalline silicon solar cells

    OpenAIRE

    Peng, Qiang; Pei, Ke; Han, Bing; Li, Ruopeng; Zhou, Guofu; Liu, Jun-Ming; Kempa, Krzysztof; Gao, Jinwei

    2016-01-01

    We report an easily manufacturable and inexpensive transparent conductive electrode for crystalline silicon (c-Si) solar cells. It is based on a silver nanoparticle network self-forming in the valleys between the pyramids of a textured solar cell surface, transformed into a nanowire network by sintering, and subsequently ?buried? under the silicon surface by a metal-assisted chemical etching. We have successfully incorporated these steps into the conventional c-Si solar cell manufacturing pro...

  6. Lithographically patterned silicon nanostructures on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, Nacera [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Piret, Gaeelle; Galopin, Elisabeth; Coffinier, Yannick [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Hadjersi, Toufik, E-mail: hadjersi@yahoo.com [Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Elkechai, Omar [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); and others

    2012-06-01

    The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 {mu}m Multiplication-Sign 50 {mu}m spaced by 20 {mu}m) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO{sub 3} aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

  7. Boyne Valley Tombs

    Science.gov (United States)

    Prendergast, Frank

    The passage tombs of the Boyne Valley exhibit the greatest level of development of the megalithic tomb building tradition in Ireland in terms of their morphology, embellishment, burial tradition, grave goods, clustering, and landscape siting. This section examines these characteristics and gives a summary archaeoastronomical appraisal of their orientation and detected astronomical alignment.

  8. Breathing Valley Fever

    Centers for Disease Control (CDC) Podcasts

    2014-02-04

    Dr. Duc Vugia, chief of the Infectious Diseases Branch in the California Department of Public Health, discusses Valley Fever.  Created: 2/4/2014 by National Center for Emerging and Zoonotic Infectious Diseases (NCEZID).   Date Released: 2/5/2014.

  9. Green valley galaxies

    Directory of Open Access Journals (Sweden)

    Salim S.

    2014-01-01

    Full Text Available The “green valley” is a wide region separating the blue and the red peaks in the ultraviolet-optical color magnitude diagram, first revealed using GALEX UV photometry. The term was coined by Christopher Martin (Caltech, in 2005. Green valley highlights the discriminating power of UV to very low relative levels of ongoing star formation, to which the optical colors, including u−r, are insensitive. It corresponds to massive galaxies below the star-forming, “main” sequence, and therefore represents a critical tool for the study of the quenching of star formation and its possible resurgence in otherwise quiescent galaxies. This article reviews the results pertaining to (predominantly disk morphology, structure, environment, dust content and gas properties of green valley galaxies in the local universe. Their relationship to AGN is also discussed. Attention is given to biases emerging from defining the “green valley” using optical colors. We review various evolutionary scenarios and we present evidence for a new one, the quasi-static view of the green valley, in which the majority (but not all of galaxies currently in the green valley were only partially quenched in the distant past and now participate in a slow cosmic decline of star formation, which also drives down the activity on the main sequence, presumably as a result of the dwindling accretion/cooling onto galaxy disks. This emerging synthetic picture is based on the findings from Fang et al. (2012, Salim et al. (2012 and Martin et al. (2007, as well as other results.

  10. Fluvial valleys and Martian palaeoclimates

    Science.gov (United States)

    Gulick, Virginia C.; Baker, Victor R.

    1989-10-01

    Theoretical models of early Martian atmospheric evolution describe the maintenance of a dense CO2 atmosphere and a warm, wet climate until the end of the heavy-bombardment phase of impacting. However, the presence of very young, earthlike fluvial valleys on the northern flank of Alba Patera conflicts with this scenario. Whereas the widespread ancient Martian valleys generally have morphologies indicative of sapping erosion by the slow outflow of subsurface water, the local Alba valleys were probably formed by surface-runoff processes. Because subsurface water flow might be maintained by hydrothermal energy inputs and because surface-runoff valleys developed late in Martian history, it is not necessary to invoke drastically different planet-wide climatic conditions to explain valley development on Mars. The Alba fluvial valleys can be explained by hydrothermal activity or outflow-channel discharges that locally modified the atmosphere, including precipitation and local overland flow on low-permeability volcanic ash.

  11. Silicon Photonics-Silicon Raman Lasers

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 12; Issue 10. Silicon Photonics - Silicon Raman Lasers. P K Basu. General Article Volume 12 ... Keywords. Silicon photonics; Si Raman laser; semiconductor laser; light emitter; optical interconnect; optical communication; Indirect gap semiconductors.

  12. Abstract of talk for Silicon Valley Linux Users Group

    Science.gov (United States)

    Clanton, Sam

    2003-01-01

    The use of Linux for research at NASA Ames is discussed.Topics include:work with the Atmospheric Physics branch on software for a spectrometer to be used in the CRYSTAL-FACE mission this summer; work on in the Neuroengineering Lab with code IC including an introduction to the extension of the human senses project,advantages with using linux for real-time biological data processing,algorithms utilized on a linux system, goals of the project,slides of people with Neuroscan caps on, and progress that has been made and how linux has helped.

  13. Silicon Valley Meets Biomedical Research in the Chan Zuckerberg Initiative.

    Science.gov (United States)

    Crow, Diana

    2017-05-18

    The Chan Zuckerberg Initiative, the philanthropy launched by Facebook CEO Mark Zuckerberg and his wife Priscilla Chan, drew attention with its stated goal of helping to "cure, manage, or treat all diseases" by the end of the century. They intend to do it through funding basic research and addressing gaps in biomedical technology. Copyright © 2017. Published by Elsevier Inc.

  14. Optical manipulation of valley pseudospin

    Science.gov (United States)

    Ye, Ziliang; Sun, Dezheng; Heinz, Tony F.

    2017-01-01

    The coherent manipulation of spin and pseudospin underlies existing and emerging quantum technologies, including quantum communication and quantum computation. Valley polarization, associated with the occupancy of degenerate, but quantum mechanically distinct valleys in momentum space, closely resembles spin polarization and has been proposed as a pseudospin carrier for the future quantum electronics. Valley exciton polarization has been created in the transition metal dichalcogenide monolayers using excitation by circularly polarized light and has been detected both optically and electrically. In addition, the existence of coherence in the valley pseudospin has been identified experimentally. The manipulation of such valley coherence has, however, remained out of reach. Here we demonstrate all-optical control of the valley coherence by means of the pseudomagnetic field associated with the optical Stark effect. Using below-bandgap circularly polarized light, we rotate the valley exciton pseudospin in monolayer WSe2 on the femtosecond timescale. Both the direction and speed of the rotation can be manipulated optically by tuning the dynamic phase of excitons in opposite valleys. This study unveils the possibility of generation, manipulation, and detection of the valley pseudospin by coupling to photons.

  15. Silicone chain extender

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a silicone chain extender, more particularly a chain extender for silicone polymers and copolymers, to a chain extended silicone polymer or copolymer and to a functionalized chain extended silicone polymer or copolymer, to a method for the preparation thereof...

  16. Maksude äkktõus ja hinnaralli / Marika Tuus

    Index Scriptorium Estoniae

    Tuus, Marika, 1951-

    2007-01-01

    Ilmunud ka: Vali Uudised, 13. juuni 2007, lk. 2; Meie Maa, 20. juuni 2007, lk. 2; Severnoje Poberezhje, 20. juuni 2007, lk. 2; Virumaa Teataja, 21. juuni 2007, lk. 11; Põhjarannik, 21. juuni 2007, lk. 2; Sõnumitooja, 22. juuni 2007, lk. 2; Harjumaa, 26. juuni 2007, lk. 2; Hiiu Leht, 26. juuni 2007, lk. 2; Pärnu Postimees, 27. juuni 2007, lk. 15; Vooremaa : Kallaste Linna Leht, 21. juuli 2007, lk. 2. Autor kritiseerib valitsuskoalitsiooni maksupoliitikat

  17. Valitsus hämab liikluskindlustuse seadusega / Marika Tuus

    Index Scriptorium Estoniae

    Tuus, Marika, 1951-

    2004-01-01

    Ilmunud ka: Vooremaa, 12. veebr. 2004, lk. 2; Elva Postipoiss, 14. veebr. 2004, lk. 4; Meie Maa, 20. veebr. 2004, lk. 2; Vali Uudised, 20. veebr. 2004, lk. 2; Põhjarannik, 21. veebr. 2004, lk. 2; Severnoje Poberezhje, 21. veebr. 2004, lk. 2; Kesknädal, 25. veebr. 2004, lk. 2; Valgamaalane, 16. märts 2004, lk. 6. Kriitiliselt liikluskindlustuse seaduse eelnõust. Liikluskindlustuse seaduse eelnõu arutelust Riigikogus

  18. Dark Valley in Newton Crater

    Science.gov (United States)

    2003-01-01

    MGS MOC Release No. MOC2-418, 11 July 2003This Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) high resolution image shows part of a dark-floored valley system in northern Newton Crater. The valley might have been originally formed by liquid water; the dark material is probably sand that has blown into the valley in more recent times. The picture was acquired earlier this week on July 6, 2003, and is located near 39.2oS, 157.9oW. The picture covers an area 2.3 km (1.4 mi) across; sunlight illuminates the scene from the upper left.

  19. Silicon takes a spin

    NARCIS (Netherlands)

    Jansen, R.

    An efficient way to transport electron spins from a ferromagnet into silicon essentially makes silicon magnetic, and provides an exciting step towards integration of magnetism and mainstream semiconductor electronics.

  20. Producing Silicon Carbide/Silicon Nitride Fibers

    Science.gov (United States)

    1986-01-01

    Manufacturing process makes CxSiyNz fibers. Precursor fibers spun from extruding machine charged with polycarbosilazane resin. When pyrolyzed, resin converted to cross-linked mixture of silicon carbide and silicon nitride, still in fiber form. CxSiyNz fibers promising substitutes for carbon fibers in high-strength, low-weight composites where high electrical conductivity unwanted.

  1. RailroadValleySpringfish_CH

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — These data identify the areas where final critical habitat for the Railroad Valley springfish (Crenichthys nevadae) occur. The irrigation ditch that is on the north...

  2. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  3. Silicon photonics beyond silicon-on-insulator

    Science.gov (United States)

    Chiles, Jeff; Fathpour, Sasan

    2017-05-01

    The standard platform for silicon photonics has been ridge or channel waveguides fabricated on silicon-on-insulator (SOI) wafers. SOI waveguides are so versatile and the technology built around it is so mature and popular that silicon photonics is almost regarded as synonymous with SOI photonics. However, due to several shortcomings of SOI photonics, novel platforms have been recently emerging. The shortcomings could be categorized into two sets: (a) those due to using silicon as the waveguide core material; and (b) those due to using silicon dioxide as the bottom cladding layer. Several heterogeneous platforms have been developed to address the first set of shortcomings. In such important heterogeneous integrated photonic platforms, the top silicon layer of SOI is typically replaced by a thin film of another optical material with a refractive index higher than the buried oxide (BOX) bottom cladding layer. Silicon is still usually preferred as the substrate of choice, but silicon has no optical functionality. In contrast, the second category of solutions aim at using silicon as the core waveguide material, while resolving issues related to the BOX layer. Particularly, one of the main drawbacks of SOI is that the BOX layer induces high optical loss in the mid-wavelength infrared (mid-IR) range. Accordingly, a host of platforms have been proposed, and some have been demonstrated, in which the BOX is replaced with insulating materials that have low intrinsic loss in the mid-IR. Examples are sapphire, lithium niobate, silicon nitride and air (suspended Si membrane waveguides). Although silicon is still the preferred substrate, sometimes a thin film of silicon, on which the optical waveguide is formed, is directly placed on top of another substrate (e.g., sapphire or lithium niobate). These alternative substrates act as both mechanical support and the lower cladding layer. In addition to the demands of mid-IR photonics, the non-SOI platforms can potentially offer other

  4. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  5. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1995-08-01

    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  6. Phosphorus {delta}-doped silicon: mixed-atom pseudopotentials and dopant disorder effects

    Energy Technology Data Exchange (ETDEWEB)

    Carter, Damien J; Marks, Nigel A [Nanochemistry Research Institute, Curtin University, PO Box U1987, Perth WA 6845 (Australia); Warschkow, Oliver; McKenzie, David R, E-mail: d.carter@curtin.edu.au [Centre for Quantum Computer Technology, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia)

    2011-02-11

    Within a full density functional theory framework we calculate the band structure and doping potential for phosphorus {delta}-doped silicon. We compare two different representations of the dopant plane; pseudo-atoms in which the nuclear charge is fractional between silicon and phosphorus, and explicit arrangements employing distinct silicon and phosphorus atoms. While the pseudo-atom approach offers several computational advantages, the explicit model calculations differ in a number of key points, including the valley splitting, the Fermi level and the width of the doping potential. These findings have implications for parameters used in device modelling.

  7. Merging of Landau levels in a strongly-interacting two-dimensional electron system in silicon

    OpenAIRE

    Shashkin, A.A.; Dolgopolov, V.T.; Clark, J. W.; Shaginyan, V. R.; Zverev, M. V.; Khodel, V. A.

    2014-01-01

    We show that the merging of the spin- and valley-split Landau levels at the chemical potential is an intrinsic property of a strongly-interacting two-dimensional electron system in silicon. Evidence for the level merging is given by available experimental data.

  8. Merging of Landau levels in a strongly interacting two-dimensional electron system in silicon.

    Science.gov (United States)

    Shashkin, A A; Dolgopolov, V T; Clark, J W; Shaginyan, V R; Zverev, M V; Khodel, V A

    2014-05-09

    We show that the merging of the spin- and valley-split Landau levels at the chemical potential is an intrinsic property of a strongly interacting two-dimensional electron system in silicon. Evidence for the level merging is given by available experimental data.

  9. Modelling photochemistry in alpine valleys

    Directory of Open Access Journals (Sweden)

    G. Brulfert

    2005-01-01

    Full Text Available Road traffic is a serious problem in the Chamonix Valley, France: traffic, noise and above all air pollution worry the inhabitants. The big fire in the Mont-Blanc tunnel made it possible, in the framework of the POVA project (POllution in Alpine Valleys, to undertake measurement campaigns with and without heavy-vehicle traffic through the Chamonix and Maurienne valleys, towards Italy (before and after the tunnel re-opening. Modelling is one of the aspects of POVA and should make it possible to explain the processes leading to episodes of atmospheric pollution, both in summer and in winter. Atmospheric prediction model ARPS 4.5.2 (Advanced Regional Prediction System, developed at the CAPS (Center for Analysis and Prediction of Storms of the University of Oklahoma, enables to resolve the dynamics above a complex terrain. This model is coupled to the TAPOM 1.5.2 atmospheric chemistry (Transport and Air POllution Model code developed at the Air and Soil Pollution Laboratory of the Ecole Polytechnique Fédérale de Lausanne. The numerical codes MM5 and CHIMERE are used to compute large scale boundary forcing. This paper focuses on modelling Chamonix valley using 300-m grid cells to calculate the dynamics and the reactive chemistry which makes possible to accurately represent the dynamics in the Chamonix valley (slope and valley winds and to process chemistry at fine scale. The summer 2003 intensive campaign was used to validate the model and to study chemistry. NOy according to O3 reduction demonstrates a VOC controlled regime, different from the NOx controlled regime expected and observed in the nearby city of Grenoble.

  10. EPA Region 1 - Valley Depth in Meters

    Data.gov (United States)

    U.S. Environmental Protection Agency — Raster of the Depth in meters of EPA-delimited Valleys in Region 1. Valleys (areas that are lower than their neighbors) were extracted from a Digital Elevation Model...

  11. Liquid Silicon Pouch Anode

    Science.gov (United States)

    2017-09-06

    Docket No. 300139 1 of 13 LIQUID SILICON POUCH ANODE STATEMENT OF GOVERNMENT INTEREST [0001] The invention described herein may be manufactured... silicon -based anodes during cycling, lithium insertion and deinsertion. Mitigation of this problem has long been sought and will result in improved...with other potential lithium alloy materials such as gallium and tin. Silicon -based solid state anodes are typically composed of small particles of

  12. Silicon spin communication

    OpenAIRE

    Dery, Hanan; Song, Yang; Li, Pengke; Zutic, Igor

    2011-01-01

    Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on modulating spin polarization of a constant current in silicon wires. We provide figures of merit for this scheme by studying spin relaxation and drift-diffusion models in silicon.

  13. Handbook of silicon photonics

    CERN Document Server

    Pavesi, Lorenzo

    2013-01-01

    The development of integrated silicon photonic circuits has recently been driven by the Internet and the push for high bandwidth as well as the need to reduce power dissipation induced by high data-rate signal transmission. To reach these goals, efficient passive and active silicon photonic devices, including waveguide, modulators, photodetectors, multiplexers, light sources, and various subsystems, have been developed that take advantage of state-of-the-art silicon technology.

  14. Valley evolution by meandering rivers

    Science.gov (United States)

    Limaye, Ajay Brian Sanjay

    Fluvial systems form landscapes and sedimentary deposits with a rich hierarchy of structures that extend from grain- to valley scale. Large-scale pattern formation in fluvial systems is commonly attributed to forcing by external factors, including climate change, tectonic uplift, and sea-level change. Yet over geologic timescales, rivers may also develop large-scale erosional and depositional patterns that do not bear on environmental history. This dissertation uses a combination of numerical modeling and topographic analysis to identify and quantify patterns in river valleys that form as a consequence of river meandering alone, under constant external forcing. Chapter 2 identifies a numerical artifact in existing, grid-based models that represent the co-evolution of river channel migration and bank strength over geologic timescales. A new, vector-based technique for bank-material tracking is shown to improve predictions for the evolution of meander belts, floodplains, sedimentary deposits formed by aggrading channels, and bedrock river valleys, particularly when spatial contrasts in bank strength are strong. Chapters 3 and 4 apply this numerical technique to establishing valley topography formed by a vertically incising, meandering river subject to constant external forcing---which should serve as the null hypothesis for valley evolution. In Chapter 3, this scenario is shown to explain a variety of common bedrock river valley types and smaller-scale features within them---including entrenched channels, long-wavelength, arcuate scars in valley walls, and bedrock-cored river terraces. Chapter 4 describes the age and geometric statistics of river terraces formed by meandering with constant external forcing, and compares them to terraces in natural river valleys. The frequency of intrinsic terrace formation by meandering is shown to reflect a characteristic relief-generation timescale, and terrace length is identified as a key criterion for distinguishing these

  15. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  16. The Central Valley Hydrologic Model

    Science.gov (United States)

    Faunt, C.; Belitz, K.; Hanson, R. T.

    2009-12-01

    Historically, California’s Central Valley has been one of the most productive agricultural regions in the world. The Central Valley also is rapidly becoming an important area for California’s expanding urban population. In response to this competition for water, a number of water-related issues have gained prominence: conjunctive use, artificial recharge, hydrologic implications of land-use change, subsidence, and effects of climate variability. To provide information to stakeholders addressing these issues, the USGS made a detailed assessment of the Central Valley aquifer system that includes the present status of water resources and how these resources have changed over time. The principal product of this assessment is a tool, referred to as the Central Valley Hydrologic Model (CVHM), that simulates surface-water flows, groundwater flows, and land subsidence in response to stresses from human uses and from climate variability throughout the entire Central Valley. The CVHM utilizes MODFLOW combined with a new tool called “Farm Process” to simulate groundwater and surface-water flow, irrigated agriculture, land subsidence, and other key processes in the Central Valley on a monthly basis. This model was discretized horizontally into 20,000 1-mi2 cells and vertically into 10 layers ranging in thickness from 50 feet at the land surface to 750 feet at depth. A texture model constructed by using data from more than 8,500 drillers’ logs was used to estimate hydraulic properties. Unmetered pumpage and surface-water deliveries for 21 water-balance regions were simulated with the Farm Process. Model results indicate that human activities, predominately surface-water deliveries and groundwater pumping for irrigated agriculture, have dramatically influenced the hydrology of the Central Valley. These human activities have increased flow though the aquifer system by about a factor of six compared to pre-development conditions. The simulated hydrology reflects spatial

  17. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  18. ALICE silicon strip module

    CERN Multimedia

    Maximilien Brice

    2006-01-01

    This small silicon detector strip will be inserted into the inner tracking system (ITS) on the ALICE detector at CERN. This detector relies on state-of-the-art particle tracking techniques. These double-sided silicon strip modules have been designed to be as lightweight and delicate as possible as the ITS will eventually contain five square metres of these devices.

  19. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    plasma effect have been tested up to 40 Gbit/s, and hybrid evanescent silicon lasers have been realized both in the form of distributed feed-back lasers and micro-disk lasers. For enhancing the impact of silicon photonics in future ultrafast and energy-efficient all-optical signal processing, e......Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice...... has been an obstacle for a simple realization of electro-optic modulators, and its indirect band gap has prevented the realization of efficient silicon light emitting diodes and lasers. Still, significant progress has been made in the past few years. Electro-optic modulators based on the free carrier...

  20. Silicone-containing composition

    Science.gov (United States)

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  1. Intraventricular Silicone Oil

    Science.gov (United States)

    Mathis, Stéphane; Boissonnot, Michèle; Tasu, Jean-Pierre; Simonet, Charles; Ciron, Jonathan; Neau, Jean-Philippe

    2016-01-01

    Abstract Intracranial silicone oil is a rare complication of intraocular endotamponade with silicone oil. We describe a case of intraventricular silicone oil fortuitously observed 38 months after an intraocular tamponade for a complicated retinal detachment in an 82 year-old woman admitted in the Department of Neurology for a stroke. We confirm the migration of silicone oil along the optic nerve. We discuss this rare entity with a review of the few other cases reported in the medical literature. Intraventricular migration of silicone oil after intraocular endotamponade is usually asymptomatic but have to be known of the neurologists and the radiologists because of its differential diagnosis that are intraventricular hemorrhage and tumor. PMID:26735537

  2. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  3. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  4. Transformational silicon electronics.

    Science.gov (United States)

    Rojas, Jhonathan Prieto; Torres Sevilla, Galo Andres; Ghoneim, Mohamed Tarek; Inayat, Salman Bin; Ahmed, Sally M; Hussain, Aftab Mustansir; Hussain, Muhammad Mustafa

    2014-02-25

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry's most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications.

  5. Silicon applications in photonics

    Science.gov (United States)

    Jelenski, A. M.; Gawlik, G.; Wesolowski, M.

    2005-09-01

    Silicon technology enabled the miniaturization of computers and other electronic system for information storage, transmission and transformation allowing the development of the Knowledge Based Information Society. Despite the fact that silicon roadmap indicates possibilities for further improvement, already now the speed of electrons and the bandwidth of electronic circuits are not sufficient and photons are commonly utilized for signal transmission through optical fibers and purely photonic circuits promise further improvements. However materials used for these purposes II/V semiconductor compounds, glasses make integration of optoelectronic circuits with silicon complex an expensive. Therefore research on light generation, transformation and transmission in silicon is very active and recently, due to nanotechnology some spectacular results were achieved despite the fact that mechanisms of light generation are still discussed. Three topics will be discussed. Porous silicon was actively investigated due to its relatively efficient electroluminescence enabling its use in light sources. Its index of refraction, differs considerably from the index of silicon, and this allows its utilization for Bragg mirrors, wave guides and photonic crystals. The enormous surface enables several applications on medicine and biotechnology and in particular due to the effective chemo-modulation of its refracting index the design of optical chemosensors. An effective luminescence of doped and undoped nanocrystalline silicon opened another way for the construction of silicon light sources. Optical amplification was already discovered opening perspectives for the construction of nanosilicon lasers. Luminescences was observed at red, green and blue wavelengths. The used technology of silica and ion implantation are compatible with commonly used CMOS technology. Finally the recently developed and proved idea of optically pumped silicon Raman lasers, using nonlinearity and vibrations in the

  6. Mechanically and optically controlled graphene valley filter

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Fenghua; Jin, Guojun, E-mail: gjin@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)

    2014-05-07

    We theoretically investigate the valley-dependent electronic transport through a graphene monolayer modulated simultaneously by a uniform uniaxial strain and linearly polarized light. Within the Floquet formalism, we calculate the transmission probabilities and conductances of the two valleys. It is found that valley polarization can appear only if the two modulations coexist. Under a proper stretching of the sample, the ratio of the light intensity and the light frequency squared is important. If this quantity is small, the electron transport is mainly contributed by the valley-symmetric central band and the conductance is valley unpolarized; but when this quantity is large, the valley-asymmetric sidebands also take part in the transport and the valley polarization of the conductance appears. Furthermore, the degree of the polarization can be tuned by the strain strength, light intensity, and light frequency. It is proposed that the detection of the valley polarization can be realized utilizing the valley beam splitting. Thus, a graphene monolayer can be used as a mechanically and optically controlled valley filter.

  7. The Microclimate of Valley Glaciers

    OpenAIRE

    Oerlemans, J.

    2010-01-01

    Glaciers have fascinated mankind throughout history. Glaciers look solid and robust, but observing them for only a couple of years shows that they are dynamic and change shape all the time. The lower glaciers come, the greater the contrast with the surrounding landscape. Many glaciers in the world enter pastures and forests. It is not surprising that laymen, artists and scientists have reported on the behaviour of large valley glaciers. A wealth of information on glacier fluctuations in histo...

  8. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  9. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  10. Silicon tracker for LHC

    Energy Technology Data Exchange (ETDEWEB)

    Bencze, G.; Bosteels, M.; Brenner, R.; Czellar, S.; Ekman, K.; Hentinen, A.; Hietanen, I.; Huhtinen, M.; Inkinen, S.; Karimaeki, V.; Karttaavi, T.; Kinnunen, R.; Lindgren, J.; Merlo, J.P.; Oksakivi, T.; Onnela, A.; Orava, R.; Pietarinen, E.; Pimiae, M.; Roth, W.; Roennqvist, C.; Saarikko, J.P.; Schulman, T.; Tuuva, T.; Voutilainen, M.; Vuoskoski, J.; Oesterberg, K. (Research Inst. for High Energy Physics, SEFT, Helsinki (Finland) Physics Dept., Univ. of Helsinki (Finland) Univ. of Technology, Helsinki, Espoo (Finland) AAbo Akademi, Domkyrkotorget, Turku (Finland) Univ. of Technology, Tampere (Finland) DAPNIA, Centre d' Etudes Nucleaires, 91 Gif-sur-Yvette, Saclay (France) CERN, Geneva (Switzerland))

    1993-05-01

    A study of a possible layout of a Silicon tracker has been done. The design is based on simulations done in the context of the Compact Muon Solenoid (CMS) detector for the LHC. The high granularity of the silicon strip detectors yields to low occupancies. New type of a silicon strip detector, single sided stereo angle detector (SSSD), has been designed to match the requirements of a LHC tracker. This detector allows a z-coordinate measurement without increasing the number of channels i.e. power consumption and it facilitates a tracker design with reasonable complicity. (orig.)

  11. Advanced silicon on insulator technology

    Science.gov (United States)

    Godbey, D.; Hughes, H.; Kub, F.

    1991-01-01

    Undoped, thin-layer silicon-on-insulator was fabricated using wafer bonding and selective etching techniques employing a molecular beam epitaxy (MBE) grown Si0.7Ge0.3 layer as an etch stop. Defect free, undoped 200-350 nm silicon layers over silicon dioxide are routinely fabricated using this procedure. A new selective silicon-germanium etch was developed that significantly improves the ease of fabrication of the bond and etch back silicon insulator (BESOI) material.

  12. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  13. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  14. ALICE Silicon Pixel Detector

    CERN Multimedia

    2003-01-01

    The Silicon Pixel Detector (SPD) is part of the Inner Tracking System (ITS) of the ALICE experiment : . SPD Structure . Bump Bonding . Test beam . ALICE1LHCb Readout Chip . Chip Tests . Data from the SPD

  15. Silicon production process evaluations

    Science.gov (United States)

    1982-05-01

    Engineering design of the third distillation column in the process was accomplished. The initial design is based on a 94.35% recovery of dichlorosilane in the distillate and a 99.9% recovery of trichlorosilane in the bottoms. The specified separation is achieved at a reflux ratio of 15 with 20 trays (equilibrium stages). Additional specifications and results are reported including equipment size, temperatures and pressure. Specific raw material requirements necessary to produce the silicon in the process are presented. The primary raw materials include metallurgical grade silicon, silicon tetrachloride, hydrogen, copper (catalyst) and lime (waste treatment). Hydrogen chloride is produced as by product in the silicon deposition. Cost analysis of the process was initiated during this reporting period.

  16. Spin-Valley Beam Splitter in Graphene

    CERN Document Server

    Song, Yu; Shi, Zhi-Gui; Li, Shun; Zhang, Jian

    2016-01-01

    The fourfold spin-valley degenerate degrees of freedom in bulk graphene can support rich physics and novel applications associated with multicomponent quantum Hall effects and linear conductance filtering. In this work, we study how to break the spin-valley degeneracy of electron beams spatially. We propose a spin-valley beam splitter in a gated ferromagnetic/pristine/strained graphene structure. We demonstrate that, in a full resonant tunneling regime for all spin-valley beam components, the formation of quasi-standing waves can lead four giant lateral Goos-H\\"{a}nchen shifts as large as the transverse beam width, while the interplay of the two modulated regions can lead difference of resonant angles or energies for the four spin-valley flavors, manifesting an effective spin-valley beam splitting effect. The beam splitting effect is found to be controllable by the gating and strain.

  17. California's restless giant: the Long Valley Caldera

    Science.gov (United States)

    Hill, David P.; Bailey, Roy A.; Hendley, James W.; Stauffer, Peter H.; Marcaida, Mae

    2014-01-01

    Scientists have monitored geologic unrest in the Long Valley, California, area since 1980. In that year, following a swarm of strong earthquakes, they discovered that the central part of the Long Valley Caldera had begun actively rising. Unrest in the area persists today. The U.S. Geological Survey (USGS) continues to provide the public and civil authorities with current information on the volcanic hazard at Long Valley and is prepared to give timely warnings of any impending eruption.

  18. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  19. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  20. Silicon-Based Light Sources for Silicon Integrated Circuits

    Directory of Open Access Journals (Sweden)

    L. Pavesi

    2008-01-01

    Full Text Available Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing, I will discuss the physical reasons why silicon is not a laser material and the approaches to make it lasing. I will start with bulk silicon, then I will discuss silicon nanocrystals and Er3+ coupled silicon nanocrystals where significant advances have been done in the past and can be expected in the near future. I will conclude with an optimistic note on silicon lasing.

  1. A landscape scale valley confinement algorithm: Delineating unconfined valley bottoms for geomorphic, aquatic, and riparian applications

    Science.gov (United States)

    David E. Nagel; John M. Buffington; Sharon L. Parkes; Seth Wenger; Jaime R. Goode

    2014-01-01

    Valley confinement is an important landscape characteristic linked to aquatic habitat, riparian diversity, and geomorphic processes. This report describes a GIS program called the Valley Confinement Algorithm (VCA), which identifies unconfined valleys in montane landscapes. The algorithm uses nationally available digital elevation models (DEMs) at 10-30 m resolution to...

  2. Temperature dependence of electron impact ionization coefficient in bulk silicon

    Science.gov (United States)

    Ahmed, Mowfaq Jalil

    2017-09-01

    This work exhibits a modified procedure to compute the electron impact ionization coefficient of silicon for temperatures between 77 and 800K and electric fields ranging from 70 to 400 kV/cm. The ionization coefficients are computed from the electron momentum distribution function through solving the Boltzmann transport equation (BTE). The arrangement is acquired by joining Legendre polynomial extension with BTE. The resulting BTE is solved by differences-differential method using MATLAB®. Six (X) equivalent ellipsoidal and non-parabolic valleys of the conduction band of silicon are taken into account. Concerning the scattering mechanisms, the interval acoustic scattering, non-polar optical scattering and II scattering are taken into consideration. This investigation showed that the ionization coefficients decrease with increasing temperature. The overall results are in good agreement with previous experimental and theoretical reported data predominantly at high electric fields.

  3. Inexpensive transparent nanoelectrode for crystalline silicon solar cells

    Science.gov (United States)

    Peng, Qiang; Pei, Ke; Han, Bing; Li, Ruopeng; Zhou, Guofu; Liu, Jun-Ming; Kempa, Krzysztof; Gao, Jinwei

    2016-06-01

    We report an easily manufacturable and inexpensive transparent conductive electrode for crystalline silicon (c-Si) solar cells. It is based on a silver nanoparticle network self-forming in the valleys between the pyramids of a textured solar cell surface, transformed into a nanowire network by sintering, and subsequently "buried" under the silicon surface by a metal-assisted chemical etching. We have successfully incorporated these steps into the conventional c-Si solar cell manufacturing process, from which we have eliminated the expensive screen printing and firing steps, typically used to make the macro-electrode of conducting silver fingers. The resulting, preliminary solar cell achieved power conversion efficiency only 14 % less than the conventionally processed c-Si control cell. We expect that a cell with an optimized processing will achieve at least efficiency of the conventional commercial cell, but at significantly reduced manufacturing cost.

  4. Vernal Pool Distribution - Central Valley, 2005 [ds650

    Data.gov (United States)

    California Department of Resources — "Great Valley Vernal Pool Distribution", originally mapped by Bob Holland, 2005. This dataset contains vernal pool areas mapped over Califorina's Central Valley,...

  5. Valley filtering due to orbital magnetic moment in bilayer graphene

    Science.gov (United States)

    Park, Chang-Soo

    2018-01-01

    We investigate the effect of valley-dependent orbital magnetic moment on the transmission of quasiparticles through biased bilayer graphene npn and pnp junctions in the presence of out-of-plane magnetic field. It is shown that the valley-polarized Zeeman-like energy splitting, due to the interaction of orbital magnetic moment with magnetic field, can suppress the transmission of quasiparticles of one valley while transmitting those of the other valley. This valley-selective transmission property can be exploited for valley filtering. We demonstrate that the npn and pnp junction, respectively, filters off the K‧-valley and K-valley particles, with nearly perfect degree of filtration.

  6. Nanoslits in silicon chips.

    Science.gov (United States)

    Aref, Thomas; Brenner, Matthew; Bezryadin, Alexey

    2009-01-28

    Potassium hydroxide (KOH) etching of a patterned [100] oriented silicon wafer produces V-shaped etch pits. We demonstrate that the remaining thickness of silicon at the tip of the etch pit can be reduced to approximately 5 microm using an appropriately sized etch mask and optical feedback. Starting from such an etched chip, we have developed two different routes for fabricating 100 nm scale slits that penetrate through the macroscopic silicon chip (the slits are approximately 850 microm wide at one face of the chip and gradually narrow to approximately 100-200 nm wide at the opposite face of the chip). In the first process, the etched chips are sonicated to break the thin silicon at the tip of the etch pit and then further KOH etched to form a narrow slit. In the second process, focused ion beam milling is used to etch through the thin silicon at the tip of the etch pit. The first method has the advantage that it uses only low-resolution technology while the second method offers more control over the length and width of the slit. Our slits can be used for preparing mechanically stable, transmission electron microscopy samples compatible with electrical transport measurements or as nanostencils for depositing nanowires seamlessly connected to their contact pads.

  7. 27 CFR 9.100 - Mesilla Valley.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Mesilla Valley. 9.100 Section 9.100 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT... Mesilla Valley viticultural area is located within Dona Ana County, New Mexico, and El Paso County, Texas...

  8. Valley Pearl’ table grape

    Science.gov (United States)

    Valley Pearl’ is an early to mid-season, white seedless table grape (Vitis vinifera L.) suitable for commercial table grape production where V. vinifera can be grown. Significant characteristics of ‘Valley Pearl’ are its high and consistent fruit production on spur pruned vines and large round berr...

  9. Beaver assisted river valley formation

    Science.gov (United States)

    Westbrook, C.J.; Cooper, D.J.; Baker, B.W.

    2011-01-01

    We examined how beaver dams affect key ecosystem processes, including pattern and process of sediment deposition, the composition and spatial pattern of vegetation, and nutrient loading and processing. We provide new evidence for the formation of heterogeneous beaver meadows on riverine system floodplains and terraces where dynamic flows are capable of breaching in-channel beaver dams. Our data show a 1.7-m high beaver dam triggered overbank flooding that drowned vegetation in areas deeply flooded, deposited nutrient-rich sediment in a spatially heterogeneous pattern on the floodplain and terrace, and scoured soils in other areas. The site quickly de-watered following the dam breach by high stream flows, protecting the deposited sediment from future re-mobilization by overbank floods. Bare sediment either exposed by scouring or deposited by the beaver flood was quickly colonized by a spatially heterogeneous plant community, forming a beaver meadow. Many willow and some aspen seedlings established in the more heavily disturbed areas, suggesting the site may succeed to a willow carr plant community suitable for future beaver re-occupation. We expand existing theory beyond the beaver pond to include terraces within valleys. This more fully explains how beavers can help drive the formation of alluvial valleys and their complex vegetation patterns as was first postulated by Ruedemann and Schoonmaker in 1938. ?? 2010 John Wiley & Sons, Ltd.

  10. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  11. Silicon Bulk Micromachined Vibratory Gyroscope

    Science.gov (United States)

    Tang, T. K.; Gutierrez, R. C.; Wilcox, J. Z.; Stell, C.; Vorperian, V.; Calvet, R.; Li, W. J.; Charkaborty, I.; Bartman, R.; Kaiser, W. J.

    1996-01-01

    This paper reports on design, modeling, fabrication, and characterization of a novel silicon bulk micromachined vibratory rate gyroscope designed for microspacecraft applications. The new microgyroscope consists of a silicon four leaf cloverstructure with a post attached to the center.

  12. Neuromorphic Silicon Neuron Circuits

    Science.gov (United States)

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

    2011-01-01

    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  13. The LHCb Silicon Tracker

    CERN Document Server

    Vollhardt, A

    2004-01-01

    The LHCb detector is a collider experiment at the new LHC at CERN/Switzerland. It is dedicated to measure precisely CP violation parameters in the B-system. The LHCb Silicon Tracker is covering the regions of the tracking detector with the highest particle fluences. The silicon sensors are wide pitch strip detectors connected to multi-channel analogue readout amplifiers. The analogue data is then digitized and transmitted optically to the counting room for further processing. The following paper describes R&D of the silicon sensors performed including testbeam data. We present readout chip performance followed by an overview of the used data transmission system, which has been designed for radiation tolerance and low cost.

  14. Integrated Silicon Optoelectronics

    CERN Document Server

    Zimmermann, Horst K

    2010-01-01

    Integrated Silicon Optoelectronics synthesizes topics from optoelectronics and microelectronics. The book concentrates on silicon as the major base of modern semiconductor devices and circuits. Starting from the basics of optical emission and absorption, as well as from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed. Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included. The book, furthermore, contains a review of the newest state of research on eagerly anticipated silicon light emitters. In order to cover the topics comprehensively, also included are integrated waveguides, gratings, and optoelectronic power devices. Numerous elaborate illustrations facilitate and enhance comprehension. This extended edition will be of value to engineers, physicists, and scientists in industry and at universities. The book is also recommended to graduate student...

  15. Neuromorphic silicon neuron circuits

    Directory of Open Access Journals (Sweden)

    Giacomo eIndiveri

    2011-05-01

    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  16. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  17. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  18. Transforming the "Valley of Death" into a "Valley of Opportunity"

    Science.gov (United States)

    Jedlovec, Gary J.; Merceret, Francis J.; O'Brien, T. P.; Roeder, William P.; Huddleston, Lisa L.; Bauman, William H., III

    2014-01-01

    Transitioning technology from research to operations (23 R2O) is difficult. The problem's importance is exemplified in the literature and in every failed attempt to do so. Although the R2O gap is often called the "valley of death", a recent a Space Weather editorial called it a "Valley of Opportunity". There are significant opportunities for space weather organizations to learn from the terrestrial experience. Dedicated R2O organizations like those of the various NOAA testbeds and collaborative "proving ground" projects take common approaches to improving terrestrial weather forecasting through the early transition of research capabilities into the operational environment. Here we present experience-proven principles for the establishment and operation of similar space weather organizations, public or private. These principles were developed and currently being demonstrated by NASA at the Applied Meteorology Unit (AMU) and the Short-term Prediction Research and Transition (SPoRT) Center. The AMU was established in 1991 jointly by NASA, the U.S. Air Force (USAF) and the National Weather Service (NWS) to provide tools and techniques for improving weather support to the Space Shuttle Program (Madura et al., 2011). The primary customers were the USAF 45th Weather Squadron (45 WS) and the NWS Spaceflight Meteorology Group (SMG who provided the weather observing and forecast support for Shuttle operations). SPoRT was established in 2002 to transition NASA satellite and remote-sensing technology to the NWS. The continuing success of these organizations suggests the common principles guiding them may be valuable for similar endeavors in the space weather arena.

  19. The Silicon Cube detector

    Energy Technology Data Exchange (ETDEWEB)

    Matea, I.; Adimi, N. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France); Blank, B. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France)], E-mail: blank@cenbg.in2p3.fr; Canchel, G.; Giovinazzo, J. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France); Borge, M.J.G.; Dominguez-Reyes, R.; Tengblad, O. [Insto. Estructura de la Materia, CSIC, Serrano 113bis, E-28006 Madrid (Spain); Thomas, J.-C. [GANIL, CEA/DSM - CNRS/IN2P3, BP 55027, F-14076 Caen Cedex 5 (France)

    2009-08-21

    A new experimental device, the Silicon Cube detector, consisting of six double-sided silicon strip detectors placed in a compact geometry was developed at CENBG. Having a very good angular coverage and high granularity, it allows simultaneous measurements of energy and angular distributions of charged particles emitted from unbound nuclear states. In addition, large-volume Germanium detectors can be placed close to the collection point of the radioactive species to be studied. The setup is ideally suited for isotope separation on-line (ISOL)-type experiments to study multi-particle emitters and was tested during an experiment at the low-energy beam line of SPIRAL at GANIL.

  20. Silicon detectors at the ILC

    Energy Technology Data Exchange (ETDEWEB)

    Brau, James E. [University of Oregon, Eugene, OR 97405-1274 (United States)], E-mail: jimbrau@uoregon.edu; Breidenbach, Martin [Stanford Linear Accelerator Center, Menlo Park, CA 94025 (United States); Baltay, Charles [Yale University, New Haven, CT 06520-8120 (United States); Frey, Raymond E.; Strom, David M. [University of Oregon, Eugene, OR 97405-1274 (United States)

    2007-09-01

    Silicon detectors are being developed for several applications in ILC detectors. These include vertex detection, tracking, electromagnetic calorimetry, and forward detectors. The advantages of silicon detector technology have been incorporated into a full detector design, SiD (the Silicon Detector). A brief overview of this effort is presented.

  1. Silicon quantum dots: surface matters

    NARCIS (Netherlands)

    Dohnalová, K.; Gregorkiewicz, T.; Kůsová, K.

    2014-01-01

    Silicon quantum dots (SiQDs) hold great promise for many future technologies. Silicon is already at the core of photovoltaics and microelectronics, and SiQDs are capable of efficient light emission and amplification. This is crucial for the development of the next technological frontiers—silicon

  2. Photosensitive Epilepsy In Kashmir Valley

    Directory of Open Access Journals (Sweden)

    Saleem S M

    2003-01-01

    Full Text Available A random population of 618 people with epilepsy hailing from different parts of Kashmir valley was screened for photosensitivity both clinically and on a standard protocol of intermittent photic stimulation (IPS provoked EEG recordings. Six (0.9% patients with a mean age of 15+6.57 years were found to be photosensitive; five had generalized and one had absence seizures. The baseline EEG in all patients showed generalized epileptiform discharges. On IPS, similar EEG findings were obtained with a narrow range of stimulus frequency i.e. 7-12 cycles/sec. There appears to be a low prevalence of photo-sensitivity in our epileptic population, possibly related to genetic factors.

  3. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  4. Silicone/Acrylate Copolymers

    Science.gov (United States)

    Dennis, W. E.

    1982-01-01

    Two-step process forms silicone/acrylate copolymers. Resulting acrylate functional fluid is reacted with other ingredients to produce copolymer. Films of polymer were formed by simply pouring or spraying mixture and allowing solvent to evaporate. Films showed good weatherability. Durable, clear polymer films protect photovoltaic cells.

  5. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex ...

  6. DELPHI Silicon Tracker

    CERN Document Server

    DELPHI was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The silicon tracking detector was nearest to the collision point in the centre of the detector. It was used to pinpoint the collision and catch short-lived particles.

  7. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  8. Silicon in cereal straw

    DEFF Research Database (Denmark)

    Murozuka, Emiko

    Silicon (Si) is known to be a beneficial element for plants. However, when plant residues are to be used as feedstock for second generation bioenergy, Si may reduce the suitability of the biomass for biochemical or thermal conversion technologies. The objective of this PhD study was to investigate...

  9. Electrometallurgy of Silicon

    Science.gov (United States)

    1988-01-01

    on record is that of St. Claire DeVille, who claimed that silicon was produced by electrolysing an impure melt of NaAlC14, but his material did not...this composition and purified melts were electrolysed at about 14500C in graphite crucible and using graphite electrodes. Applied potentials were

  10. OPAL Silicon Tungsten Luminometer

    CERN Multimedia

    OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

  11. Hybrid silicon ring lasers

    Science.gov (United States)

    Liang, Di; Fiorentino, Marco; Bowers, John E.; Beausoleil, Raymond G.

    2011-01-01

    Hybrid silicon platform provides a solution to integrate active components (lasers, amplifiers, photodetectors, etc.) with passive ones on the same silicon substrate, which can be used for building an optical interconnect system. Owing to the advantages in footprint, power consumption, and high-speed modulation, hybrid silicon microring lasers have been demonstrated as a potential candidate for on-chip silicon light source. In this paper we review the progress to improve the performance of recently demonstrated compact microring lasers with ring diameter of 50 μm. A simple approach to enhance optical mode and electron-hole recombination, which results in threshold reduction and efficiency improvement is developed. This is done by appropriately undercutting the multiple quantum well (MQW) region to force carriers to flow towards the outer edge of the microring for better gain/optical mode overlap. We observe a reduction of the threshold of over 20% and up to 80% output power enhancement. The model and the experimental results highlight the benefits, as well as the negative effects from excessive undercutting, including lower MQW confinement, higher modal loss and higher thermal impedance. A design rule for MQW undercutting is therefore provided. Application as on-chip optical interconnects is discussed from a system perspective.

  12. Silicon in beer and brewing.

    Science.gov (United States)

    Casey, Troy R; Bamforth, Charles W

    2010-04-15

    It has been claimed that beer is one of the richest sources of silicon in the diet; however, little is known of the relationship between silicon content and beer style and the manner in which beer is produced. The purpose of this study was to measure silicon in a diversity of beers and ascertain the grist selection and brewing factors that impact the level of silicon obtained in beer. Commercial beers ranged from 6.4 to 56.5 mg L(-1) in silicon. Products derived from a grist of barley tended to contain more silicon than did those from a wheat-based grist, likely because of the high levels of silica in the retained husk layer of barley. Hops contain substantially more silicon than does grain, but quantitatively hops make a much smaller contribution than malt to the production of beer and therefore relatively less silicon in beer derives from them. During brewing the vast majority of the silicon remains with the spent grains; however, aggressive treatment during wort production in the brewhouse leads to increased extraction of silicon into wort and much of this survives into beer. It is confirmed that beer is a very rich source of silicon. (c) 2010 Society of Chemical Industry.

  13. Qena Valley Evolution, Eastern Desert, Egypt

    Science.gov (United States)

    Abdelkareem, Mohamed

    2010-05-01

    Remotely sensed topographic and optical data were used to identify tectonic phenomena in Qena Valley. Using digital elevation model, morphotectonic features were identified. Processing and analysis were carried out by the combined use of: (1) digital elevation model, (2) digital drainage network analysis, (3) optical data analysis, and (4) lineament extraction and analysis. Structural information from other sources, such as geological maps, remotely sensed images and field observations were analyzed with geographic information system techniques. The analysis results reveal that the linear features of Qena Valley controlled by several structural elements have different trends NW-SE, NE-SW and N-S trends. Basement rocks at Qena valley has a major NE-SW trending and the sedimentary rocks are dominated by a NW-SE, NE-SW and N-S trends while, E-W are less abundant. The NE-SW trends at north Eastern Desert Egypt attain to normal faults that reflect extension in NW-SE direction, which is related to strike slip faulting along NW-SE directed Najd fault system. Further, the NE-SW is abundant as joints and fractures seem to have controlled the path of the Nile in Qift - Qena area. The NW-SE direction are abundant in the rock fracture trends (Gulf of Suez or Red Sea) and reflects Neoproterozoic faults have been reactivated in Neogene during rifting events of the Red Sea opening and marked the sedimentary rocks at Qena valley. The results of the lineament density map reveals that Qena valley was originated along one fault that trend like the Gulf of Suez and the range of the Red Sea Hills. This major fault was dissected by several lateral faults are seen well exposed at numerous places within the valley, especially on its eastern side. Both sides of Qena valley have a similar density matching may attain to that this lineaments affected Qena valley during rifting. This rifts it probably happened in Early Miocene associated with Red Sea tectonics. The general southward slope of

  14. 27 CFR 9.78 - Ohio River Valley.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Ohio River Valley. 9.78... River Valley. (a) Name. The name of the viticultural area described in this section is “Ohio River Valley.” (b) Approved maps. The approved maps for determining the boundary of the Ohio River Valley...

  15. Formation of silicon nanoparticles from high temperature annealed silicon rich silicon oxynitride films

    Science.gov (United States)

    Slaoui, Abdelilah; Ehrhardt, Fabien; Delachat, Florian; Ferblantier, Gérald; Muller, Dominique

    2012-10-01

    Silicon rich silicon oxynitride layers were deposited by ECR-PECVD in order to form silicon nanoparticles upon high thermal annealing at 1100°C. The effect of the gas precursor type and flows on the atomic composition and the structural properties was assessed by RBS and ERDA analysis as well as by Raman spectroscopy. The morphological and crystalline properties of the resulting nanoparticles were investigated by TEM analysis. We have found that the silicon nanoparticules average size and the crystalline fraction depend strongly on the silicon excess in the SiN and SiON layer.

  16. Hydrothermal system of Long Valley caldera, California

    Energy Technology Data Exchange (ETDEWEB)

    Sorey, M.L.; Lewis, R.E.; Olmsted, F.H.

    1978-01-01

    The geologic and hydrologic setting of the hydrothermal system are described. The geochemical and thermal characteristics of the system are presented. A mathematical model of the Long Valley caldera is analyzed. (MHR)

  17. Alluvial Boundary of California's Central Valley

    Data.gov (United States)

    U.S. Geological Survey, Department of the Interior — This digital dataset defines the extent of the alluvial deposits in the Central Valley of California and encompasses the contiguous Sacramento, San Joaquin, and...

  18. Vegetation - San Felipe Valley [ds172

    Data.gov (United States)

    California Department of Resources — This Vegetation Map of the San Felipe Valley Wildlife Area in San Diego County, California is based on vegetation samples collected in the field in 2002 and 2005 and...

  19. Detection of valley currents in graphene nanoribbons

    Science.gov (United States)

    Chan, K. S.

    2018-02-01

    There are two valleys in the band structure of graphene zigzag ribbons, which can be used to construct valleytronic devices. We studied the use of a T junction formed by an armchair ribbon and a zigzag ribbon to detect the valley-dependent currents in a zigzag graphene ribbon. A current flowing in a zigzag ribbon is divided by the T junction into the zigzag and armchair leads and this separation process is valley dependent. By measuring the currents in the two outgoing leads, the valley-dependent currents in the incoming lead can be determined. The method does not require superconducting or magnetic elements as in other approaches and thus will be useful in the development of valleytronic devices.

  20. Airborne Dust Models in Valley Fever Research

    Science.gov (United States)

    Sprigg, W. A.; Galgiani, J. N.; Vujadinovic, M.; Pejanovic, G.; Vukovic, A. J.; Prasad, A. K.; Djurdjevic, V.; Nickovic, S.

    2011-12-01

    Dust storms (haboobs) struck Phoenix, Arizona, in 2011 on July 5th and again on July 18th. One potential consequence: an estimated 3,600 new cases of Valley Fever in Maricopa County from the first storm alone. The fungi, Coccidioides immitis, the cause of the respiratory infection, Valley Fever, lives in the dry desert soils of the American southwest and southward through Mexico, Central America and South America. The fungi become part of the dust storm and, a few weeks after inhalation, symptoms of Valley Fever may appear, including pneumonia-like illness, rashes, and severe fatigue. Some fatalities occur. Our airborne dust forecast system predicted the timing and extent of the storm, as it has done with other, often different, dust events. Atmosphere/land surface models can be part of public health services to reduce risk of Valley Fever and exacerbation of other respiratory and cardiovascular illness.

  1. VALMET-A valley air pollution model

    Energy Technology Data Exchange (ETDEWEB)

    Whiteman, C.D.; Allwine, K.J.

    1983-09-01

    Following a thorough analysis of meteorological data obtained from deep valleys of western Colorado, a modular air-pollution model has been developed to simulate the transport and diffusion of pollutants released from an elevated point source in a well-defined mountain valley during the nighttime and morning transition periods. This initial version of the model, named VALMET, operates on a valley cross section at an arbitrary distance down-valley from a continuous point source. The model has been constructed to include parameterizations of the major physical processes that act to disperse pollution during these time periods. The model has not been fully evaluated. Further testing, evaluations, and development of the model are needed. Priorities for further development and testing are provided.

  2. Burrowing Owl - Palo Verde Valley [ds197

    Data.gov (United States)

    California Department of Resources — These burrowing owl observations were collected during the spring and early summer of 1976 in the Palo Verde Valley, eastern Riverside County, California. This is an...

  3. New River Valley Agriculture & Agritourism Strategic Plan

    OpenAIRE

    Walker, Martha A.; Scott, Kelli H.

    2017-01-01

    This strategic plan discusses plans for improving the marketing of agritourism and agribusiness in the New River Valley (Floyd, Giles, Montgomery and Pulaski Counties), and potentially increasing community wealth while improving the access to local crops and products. Includes Planning for an Agricultural Future in Giles, Montgomery, and Pulaski Counties: An Agricultural Regional Assessment, prepare for the New River Valley Agricultural & Agritourism Project Management Team by Matson Consu...

  4. Recent advances in silicon photonic integrated circuits

    Science.gov (United States)

    Bowers, John E.; Komljenovic, Tin; Davenport, Michael; Hulme, Jared; Liu, Alan Y.; Santis, Christos T.; Spott, Alexander; Srinivasan, Sudharsanan; Stanton, Eric J.; Zhang, Chong

    2016-02-01

    We review recent breakthroughs in silicon photonics technology and components and describe progress in silicon photonic integrated circuits. Heterogeneous silicon photonics has recently demonstrated performance that significantly outperforms native III-V components. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications, sensors and silicon electronics is reviewed.

  5. Silicon oxidation by ozone

    Energy Technology Data Exchange (ETDEWEB)

    Fink, Christian K; Jenkins, Stephen J [Department of Chemistry, University of Cambridge, Cambridge CB2 1EW (United Kingdom); Nakamura, Ken; Ichimura, Shingo [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)], E-mail: sjj24@cam.ac.uk

    2009-05-06

    Understanding the oxidation of silicon has been an ongoing challenge for many decades. Ozone has recently received considerable attention as an alternative oxidant in the low temperature, damage-free oxidation of silicon. The ozone-grown oxide was also found to exhibit improved interface and electrical characteristics over a conventionally dioxygen-grown oxide. In this review article, we summarize the key findings about this alternative oxidation process. We discuss the different methods of O{sub 3} generation, and the advantages of the ozone-grown Si/SiO{sub 2} interface. An understanding of the growth characteristics is of utmost importance for obtaining control over this alternative oxidation process. (topical review)

  6. Silicon Carbide Electronic Devices

    Science.gov (United States)

    Neudeck, P. G.

    2001-01-01

    The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

  7. Germanium epitaxy on silicon

    Directory of Open Access Journals (Sweden)

    Hui Ye

    2014-03-01

    Full Text Available With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  8. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Silicone breast implants: complications.

    Science.gov (United States)

    Iwuagwu, F C; Frame, J D

    1997-12-01

    Silicone breast implants have been used for augmentation mammoplasty for cosmetic purposes as well as for breast reconstruction following mastectomy for more than three decades. Though the use of the silicone gel filled variety has been banned in the USA except for special cases, they continue to be available elsewhere in the world including the UK. Despite the immense benefit they provide, their usage is associated with some complications. Most of these are related to the surgery and can be reduced by good surgical management. The major complications associated with their use is adverse capsular contracture, an outcome which can be very frustrating to manage. This article reviews the commonly reported complications and suggested management alternatives.

  10. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  11. Electrons in silicon microstructures.

    Science.gov (United States)

    Howard, R E; Jackel, L D; Mankiewich, P M; Skocpol, W J

    1986-01-24

    Silicon microstructures only a few hundred atoms wide can be fabricated and used to study electron transport in narrow channels. Spatially localized voltage probes as close together as 0.1 micrometer can be used to investigate a variety of physical phenomena, including velocity saturation due to phonon emission, the local potentials caused by scattering from a single trapped electron, and quantum tunneling or hopping among very few electron states.

  12. Structure of Silicon Clusters

    OpenAIRE

    Pan, Jun; Bahel, Atul; Ramakrishna, Mushti V.

    1995-01-01

    We determined the structures of silicon clusters in the 11-14 atom size range using the tight-binding molecular dynamics method. These calculations reveal that \\Si{11} is an icosahedron with one missing cap, \\Si{12} is a complete icosahedron, \\Si{13} is a surface capped icosahedron, and \\Si{14} is a 4-4-4 layer structure with two caps. The characteristic feature of these clusters is that they are all surface.

  13. Dynamic Silicon Nanophotonics

    Science.gov (United States)

    2013-07-31

    the waveguide. Furthermore, the design is fabricated using standard contact’s/via’s in a CMOS process (i.e. that traditionally connect metal layers to...process steps or even materials. It directly makes use of the standard metal contacts/via’s used to connect upper Metal layers to the active Silicon...Low-Voltage Lithium Niobate Electro-Optic Modulator,” In Preparation PERSONNEL SUPPORTED The following personnel have been supported by the YIP

  14. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  15. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  16. Epitaxial Silicon Doped With Antimony

    Science.gov (United States)

    Huffman, James E.; Halleck, Bradley L.

    1996-01-01

    High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.

  17. Radiation hardening of silicon detectors

    CERN Document Server

    Lemeilleur, F

    1999-01-01

    The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current and evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard, float-zone silicon containing various atomic impurities and from epitaxial silicon materials. Some recent results concerning their radiation hardness are presented. (15 refs).

  18. Topological Valley Transport in Two-dimensional Honeycomb Photonic Crystals.

    Science.gov (United States)

    Yang, Yuting; Jiang, Hua; Hang, Zhi Hong

    2018-01-25

    Two-dimensional photonic crystals, in analogy to AB/BA stacking bilayer graphene in electronic system, are studied. Inequivalent valleys in the momentum space for photons can be manipulated by simply engineering diameters of cylinders in a honeycomb lattice. The inequivalent valleys in photonic crystal are selectively excited by a designed optical chiral source and bulk valley polarizations are visualized. Unidirectional valley interface states are proved to exist on a domain wall connecting two photonic crystals with different valley Chern numbers. With the similar optical vortex index, interface states can couple with bulk valley polarizations and thus valley filter and valley coupler can be designed. Our simple dielectric PC scheme can help to exploit the valley degree of freedom for future optical devices.

  19. Silicon processing for photovoltaics II

    CERN Document Server

    Khattak, CP

    2012-01-01

    The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

  20. Silicone Gel-Filled Breast Implants

    Science.gov (United States)

    ... Medical Procedures Implants and Prosthetics Breast Implants Silicone Gel-Filled Breast Implants Share Tweet Linkedin Pin it ... options Linkedin Pin it Email Print Description: Silicone gel-filled breast implants have a silicone outer shell ...

  1. Christmas Valley Renewable Energy Assessment

    Energy Technology Data Exchange (ETDEWEB)

    Del Mar, Robert [Oregon Department of Energy, Salem, OR (United States)

    2017-05-22

    In partnership with the Oregon Military Department, the Department of Energy used the award to assess and evaluate renewable resources in a 2,622-acre location in Lake County, central Oregon, leading to future development of up to 200 MW of solar electricity. In partnership with the Oregon Military Department, the Department of Energy used the award to assess and evaluate renewable resources in a 2,622-acre location in Lake County, central Oregon, leading to future development of up to 200 MW of solar electricity. The Oregon Military Department (Military) acquired a large parcel of land located in south central Oregon. The land was previously owned by the US Air Force and developed for an Over-the-Horizon Backscatter Radar Transmitter Facility, located about 10 miles east of the town of Christmas Valley. The Military is investigating a number of uses for the site, including Research and Development (R&D) laboratory, emergency response, military operations, developing renewable energy and related educational programs. One of the key potential uses would be for a large scale solar photovoltaic power plant. This is an attractive use because the site has excellent solar exposure; an existing strong electrical interconnection to the power grid; and a secure location at a moderate cost per acre. The project objectives include: 1. Site evaluation 2. Research and Development (R&D) facility analysis 3. Utility interconnection studies and agreements 4. Additional on-site renewable energy resources analysis 5. Community education, outreach and mitigation 6. Renewable energy and emergency readiness training program for veterans

  2. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  3. Silicon on insulator with active buried regions

    Science.gov (United States)

    McCarthy, Anthony M.

    1996-01-01

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  4. The LHCb Silicon Tracker

    CERN Document Server

    Elsasser, Ch; Gallas Torreira, A; Pérez Trigo, A; Rodríguez Pérez, P; Bay, A; Blanc, F; Dupertuis, F; Haefeli, G; Komarov, I; Märki, R; Muster, B; Nakada, T; Schneider, O; Tobin, M; Tran, M T; Anderson, J; Bursche, A; Chiapolini, N; Saornil, S; Steiner, S; Steinkamp, O; Straumann, U; Vollhardt, A; Britsch, M; Schmelling, M; Voss, H; Okhrimenko, O; Pugatch, V

    2013-01-01

    The aim of the LHCb experiment is to study rare heavy quark decays and CP vio- lation with the high rate of beauty and charmed hadrons produced in $pp$ collisions at the LHC. The detector is designed as a single-arm forward spectrometer with excellent tracking and particle identification performance. The Silicon Tracker is a key part of the tracking system to measure the particle trajectories to high precision. This paper reports the performance as well as the results of the radiation damage monitoring based on leakage currents and on charge collection efficiency scans during the data taking in the LHC Run I.

  5. Edgeless silicon pad detectors

    Energy Technology Data Exchange (ETDEWEB)

    Perea Solano, B. [CERN, CH-1211 Geneva 23 (Switzerland)]. E-mail: blanca.perea.solano@cern.ch; Abreu, M.C. [LIP and University of Algarve, 8000 Faro (Portugal); Avati, V. [CERN, CH-1211 Geneva 23 (Switzerland); Boccali, T. [INFN Sez. di Pisa and Scuola Normale Superiore, Pisa (Italy); Boccone, V. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Bozzo, M. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Capra, R. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Casagrande, L. [INFN Sez. di Roma 2 and Universita di Roma 2, Rome (Italy); Chen, W. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Eggert, K. [CERN, CH-1211 Geneva 23 (Switzerland); Heijne, E. [CERN, CH-1211 Geneva 23 (Switzerland); Klauke, S. [CERN, CH-1211 Geneva 23 (Switzerland); Li, Z. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Maeki, T. [Helsinki Institute of Physics, Helsinki (Finland); Mirabito, L. [CERN, CH-1211 Geneva 23 (Switzerland); Morelli, A. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Niinikoski, T.O. [CERN, CH-1211 Geneva 23 (Switzerland); Oljemark, F. [Helsinki Institute of Physics, Helsinki (Finland); Palmieri, V.G. [Helsinki Institute of Physics, Helsinki (Finland); Rato Mendes, P. [LIP and University of Algarve, 8000 Faro (Portugal); Rodrigues, S. [LIP and University of Algarve, 8000 Faro (Portugal); Siegrist, P. [CERN, CH-1211 Geneva 23 (Switzerland); Silvestris, L. [INFN Sez. Di Bari, Bari (Italy); Sousa, P. [LIP and University of Algarve, 8000 Faro (Portugal); Tapprogge, S. [Helsinki Institute of Physics, Helsinki (Finland); Trocme, B. [Institut de Physique Nucleaire, Villeurbanne (France)

    2006-05-01

    We report measurements in a high-energy pion beam of the sensitivity of the edge region in 'edgeless' planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5{+-}8{sub stat.}.{+-}6{sub syst.}) {mu}m.

  6. Edgeless silicon pad detectors

    Science.gov (United States)

    Perea Solano, B.; Abreu, M. C.; Avati, V.; Boccali, T.; Boccone, V.; Bozzo, M.; Capra, R.; Casagrande, L.; Chen, W.; Eggert, K.; Heijne, E.; Klauke, S.; Li, Z.; Mäki, T.; Mirabito, L.; Morelli, A.; Niinikoski, T. O.; Oljemark, F.; Palmieri, V. G.; Rato Mendes, P.; Rodrigues, S.; Siegrist, P.; Silvestris, L.; Sousa, P.; Tapprogge, S.; Trocmé, B.

    2006-05-01

    We report measurements in a high-energy pion beam of the sensitivity of the edge region in "edgeless" planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5±8 stat..±6 syst.) μm.

  7. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  8. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  9. Etched silicon gratings for NGST

    Energy Technology Data Exchange (ETDEWEB)

    Ge, J.; Ciarlo, D.; Kuzmenko, P.; Macintosh, B.; Alcock, C.; Cook, K.

    1999-10-28

    The authors have developed the world's first etched silicon grisms at LLNL in September 1999. The high optical surface quality of the grisms allows diffraction-limited spectral resolution in the IR wavelengths where silicon has good transmission. They estimated that the scattering light level is less than 4% at 2.2 {micro}m. Silicon can significantly increase the dispersive power of spectroscopic instruments for NGST due to its very large refractive index (n = 3.4). For example, a silicon grism with 40 mm clear entrance aperture and a 46 wedge angle can provide R = 10,000--100,000 in {approximately} 1--10 {micro}m. The same grating working in the immersed reflection mode can provide {approximately} three times higher spectral resolution than in the transmission mode. To achieve a desired spectral resolution for NGST, the spectrograph size and weight can be significantly reduced if silicon gratings are used instead of conventional gratings.

  10. Measured compaction for 24 extensometers in the Central Valley

    Data.gov (United States)

    U.S. Geological Survey, Department of the Interior — This digital dataset contains the compaction data for 24 extensometers used for observations in the Central Valley Hydrologic Model (CVHM). The Central Valley...

  11. Evapotranspiration Input Data for the Central Valley Hydrologic Model (CVHM)

    Data.gov (United States)

    U.S. Geological Survey, Department of the Interior — This digital dataset contains monthly reference evapotranspiration (ETo) data for the Central Valley Hydrologic Model (CVHM). The Central Valley encompasses an...

  12. Goldstone-Apple Valley Radio Telescope System Theory of Operation

    Science.gov (United States)

    Stephan, George R.

    1997-01-01

    The purpose of this learning module is to enable learners to describe how the Goldstone-Apple Valley Radio Telescope (GAVRT) system functions in support of Apple Valley Science and Technology Center's (AVSTC) client schools' radio astronomy activities.

  13. Micromachined silicon seismic transducers

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Sniegowski, J.J.; Armour, D.L.; Fleming, R.P.

    1995-08-01

    Batch-fabricated silicon seismic transducers could revolutionize the discipline of CTBT monitoring by providing inexpensive, easily depolyable sensor arrays. Although our goal is to fabricate seismic sensors that provide the same performance level as the current state-of-the-art ``macro`` systems, if necessary one could deploy a larger number of these small sensors at closer proximity to the location being monitored in order to compensate for lower performance. We have chosen a modified pendulum design and are manufacturing prototypes in two different silicon micromachining fabrication technologies. The first set of prototypes, fabricated in our advanced surface- micromachining technology, are currently being packaged for testing in servo circuits -- we anticipate that these devices, which have masses in the 1--10 {mu}g range, will resolve sub-mG signals. Concurrently, we are developing a novel ``mold`` micromachining technology that promises to make proof masses in the 1--10 mg range possible -- our calculations indicate that devices made in this new technology will resolve down to at least sub-{mu}G signals, and may even approach to 10{sup {minus}10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  14. Microplasticity of silicon crystals

    Science.gov (United States)

    Drozhzhin, A. I.; Sidel'Nikov, I. V.; Antipov, S. A.; Sedykh, N. K.

    1980-05-01

    The low-frequency (˜1 Hz) internal friction (Q-1) method was used to study the microplasticity of silicon whisker crystals grown by the method of chemical gas-transport reactions in a closed ampoule. A study was made of p-type crystals with the growth axis , 1 60 μ in diameter, working length 1 3 mm, both in the original state and after plastic (γ ˜ 1%) deformtion by torsion. The temperature and amplitude dependences of Q-1 were studied in ˜5·10-5 torr vacuum. The amplitude of alternating vibrations was within the range ˜10-5 10-3 and the axial stresses were ˜106 107 N/m2. The experimental results led to the conclusion that the microplasticity of undeformed silicon whiskers was due to heterogeneous nucleation of dislocations in stress concentration regions near surface defects, assisted by thermal fluctuations. In deformed whiskers the microplasticity was attributed to the nucleation and motion along dislocations of single and double thermal kinks in accordance with the Seeger model.

  15. The Silicon Lattice Accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Spencer, J

    2003-11-24

    Previously, the generalized luminosity L was defined and calculated for all incident channels based on an NLC e{sup +}e{sup -} design. Alternatives were then considered to improve the differing beam-beam effects in the e{sup -}e{sup -}, e{gamma} and {gamma}{gamma} channels. One example was tensor beams composed of bunchlets n{sub ijk} implemented with a laser-driven, silicon accelerator based on micromachining techniques. Problems were considered and expressions given for radiative broadening due to bunchlet manipulation near the final focus to optimize luminosity via charge enhancement, neutralization or bunch shaping. Because the results were promising, we explore fully integrated structures that include sources, optics (for both light and particles) and acceleration in a common format--an accelerator-on-chip. Acceptable materials (and wavelengths) must allow velocity synchronism between many laser and electron pulses with optimal efficiency in high radiation environments. There are obvious control and cost advantages that accrue from using silicon structures if radiation effects can be made acceptable and the structures fabricated. Tests related to deep etching, fabrication and radiation effects on candidate amorphous and crystalline materials indicate Si(1.2 < {lambda}{sub L} < 10 {micro}m) and fused c-SiO{sub 2}(0.3 < {lambda}{sub L} < 4 {micro}m) to be ideal.

  16. Radon in water of Shu river valley

    Directory of Open Access Journals (Sweden)

    Yelena Kuyanova

    2012-03-01

    Full Text Available The values of radon and its daughter products in water of Shu River valley have been received, using liquid scintillation spectrometry. The radon concentration naturally increases in investigated water samples downstream the Shu River, reaching the maximum value in the Tashutkolsky basin. The radon and its daughter products in a human body of 15 % are in soft tissues have been calculated by a mathematical modeling method. The annual dose from radon and its daughter products calculated by a mathematical modeling method received by the residents living in Shu river valley is 0,03 mSv/year.

  17. The Health Valley: Global Entrepreneurial Dynamics.

    Science.gov (United States)

    Dubuis, Benoit

    2014-12-01

    In the space of a decade, the Lake Geneva region has become the Health Valley, a world-class laboratory for discovering and developing healthcare of the future. Through visionary individuals and thanks to exceptional infrastructure this region has become one of the most dynamic in the field of innovation, including leading scientific research and exceptional actors for the commercialization of academic innovation to industrial applications that will improve the lives of patients and their families. Here follows the chronicle of a spectacular expansion into the Health Valley.

  18. Advanced seismic imaging of overdeepened alpine valleys

    Science.gov (United States)

    Burschil, Thomas; Buness, Hermann; Tanner, David; Gabriel, Gerald; Krawczyk, Charlotte M.

    2017-04-01

    Major European alpine valleys and basins are densely populated areas with infrastructure of international importance. To protect the environment by, e.g., geohazard assessment or groundwater estimation, understanding of the geological structure of these valleys is essential. The shape and deposits of a valley can clarify its genesis and allows a prediction of behaviour in future glaciations. The term "overdeepened" refers to valleys and basins, in which pressurized melt-water under the glacier erodes the valley below the fluvial level. Most overdeepened valleys or basins were thus refilled during the ice melt or remain in the form of lakes. The ICDP-project Drilling Overdeepened Alpine Valleys (DOVE) intends to correlate the sedimentary succession from boreholes between valleys in the entire alpine range. Hereby, seismic exploration is essential to predict the most promising well path and drilling site. In a first step, this DFG-funded project investigates the benefit of multi-component techniques for seismic imaging. At two test sites, the Tannwald Basin and the Lienz Basin, the Leibniz Institute for Applied Geophysics acquired P-wave reflection profiles to gain structural and facies information. Built on the P-wave information, several S-wave reflection profiles were acquired in the pure SH-wave domain as well as 6-C reflection profiles using a horizontal S-wave source in inline and crossline excitation and 3-C receivers. Five P-wave sections reveal the structure of the Tannwald Basin, which is a distal branch basin of the Rhine Glacier. Strong reflections mark the base of the basin, which has a maximum depth of 240 metres. Internal structures and facies vary strongly and spatially, but allow a seismic facies characterization. We distinguish lacustrine, glacio-fluvial, and deltaic deposits, which make up the fill of the Tannwald Basin. Elements of the SH-wave and 6-C seismic imaging correlate with major structures in the P-wave image, but vary in detail. Based on

  19. Clean Cities Award Winning Coalition: Coachella Valley

    Energy Technology Data Exchange (ETDEWEB)

    ICF Kaiser

    1999-05-20

    Southern California's Coachella Valley became a Clean Cities region in 1996. Since then, they've made great strides. SunLine Transit, the regional public transit provider, was the first transit provider to replace its entire fleet with compressed natural gas buses. They've also built the foundation for a nationally recognized model in the clean air movement, by partnering with Southern California Gas Company to install a refueling station and developing a curriculum for AFV maintenance with the College of the Desert. Today the valley is home to more than 275 AFVs and 15 refueling stations.

  20. Molecular Epidemiology of Rift Valley Fever Virus

    Science.gov (United States)

    Grobbelaar, Antoinette A.; Weyer, Jacqueline; Leman, Patricia A.; Kemp, Alan; Paweska, Janusz T.

    2011-01-01

    Phylogenetic relationships were examined for 198 Rift Valley fever virus isolates and 5 derived strains obtained from various sources in Saudi Arabia and 16 countries in Africa during a 67-year period (1944–2010). A maximum-likelihood tree prepared with sequence data for a 490-nt section of the Gn glycoprotein gene showed that 95 unique sequences sorted into 15 lineages. A 2010 isolate from a patient in South Africa potentially exposed to co-infection with live animal vaccine and wild virus was a reassortant. The potential influence of large-scale use of live animal vaccine on evolution of Rift Valley fever virus is discussed. PMID:22172568

  1. Selective emitter using porous silicon for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Inyong; Kim, Kyunghae; Kim, Youngkuk; Han, Kyumin; Kyeong, Doheon; Kwon, Taeyoung; Vinh Ai, Dao; Lee, Jeongchul; Yi, Junsin [School of Information and Communication Engineering, Sungkyunkwan University, Chunchun-dong, Jangan-Gu, Suwon-City, Kyunggi-Do 440-746 (Korea); Thamilselvan, M. [School of Information and Communication Engineering, Sungkyunkwan University, Chunchun-dong, Jangan-Gu, Suwon-City, Kyunggi-Do 440-746 (Korea); Government College of Technology, Coimbatore, Tamilnadu (India); Ju, Minkyu; Lee, Kyungsoo [KPE Ins. Chunchun-dong, Jangan-Gu, Suwon-City, Kyunggi-Do 440-746 (Korea)

    2009-06-15

    This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured emitter sheet resistances at the high- and low-level-doped regions were 30-35 and 97-474 {omega}/{open_square} respectively. A simple process for low- and high-level doping has been achieved by forming porous and porous-free silicon surface, in this study, which could be applied for solar cells selective emitter doping. (author)

  2. Stoichiometry of silicon-rich dielectrics for silicon nanocluster formation

    Energy Technology Data Exchange (ETDEWEB)

    Barreto, Jorge; Morales, Alfredo; Dominguez, Carlos [Centro Nacional de Microelectronica, IMB-CNM (CSIC), Campus UAB, 08193 Cerdanyola del Valles (Spain); Peralvarez, Mariano; Garrido, Blas [EME, Departament d' Electronica, Universitat de Barcelona, 08028 Barcelona (Spain)

    2011-03-15

    Silicon photonics has been bred by several techniques including Chemical Vapour Deposition (CVD) and ion implantation amongst others in order to synthesize silicon nanoclusters with CMOS-compatible technologies. Most of these techniques end up relying on the formation of nanoclusters through the diffusion and segregation of silicon atoms in a silicon-rich dielectric matrix. In this work we present a parallel analysis on silicon rich dielectric layers obtained by different methods. X-Ray Photoelectron Spectroscopy, ellipsometry and photoluminescence are used to characterize Low Pressure CVD and Plasma Enhanced CVD samples in the same theoretical silicon excess range. The analysis shows that independently on the obtaining method the initial concentration of silicon excess can be used to estimate some properties. The actual binding of the atoms can change as well regardless of their initial quantity. However secondary parameters such as the obtaining temperature and the nitrogen concentration in the layer have to be taken into account. Therefore, experimental parameters such as the flow ratio between reactant gases or the refractive index prove to be insufficient if samples obtained by different methods are compared. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Geothermal resource investigations, Imperial Valley, California. Status report

    Energy Technology Data Exchange (ETDEWEB)

    1971-04-01

    The discussion is presented under the following chapter titles: geothermal resource investigations, Imperial Valley, California; the source of geothermal heat; status of geothermal resources (worldwide); geothermal aspects of Imperial Valley, California; potential geothermal development in Imperial Valley; environmental considerations; and proposed plan for development. (JGB)

  4. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    Science.gov (United States)

    Corman, Gregory Scot; Luthra, Krishan Lal

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  5. Lipid membranes on nanostructured silicon.

    Energy Technology Data Exchange (ETDEWEB)

    Slade, Andrea Lynn; Lopez, Gabriel P. (University of New Mexico, Albuquerque, NM); Ista, Linnea K. (University of New Mexico, Albuquerque, NM); O' Brien, Michael J. (University of New Mexico, Albuquerque, NM); Sasaki, Darryl Yoshio; Bisong, Paul (University of New Mexico, Albuquerque, NM); Zeineldin, Reema R. (University of New Mexico, Albuquerque, NM); Last, Julie A.; Brueck, Stephen R. J. (University of New Mexico, Albuquerque, NM)

    2004-12-01

    A unique composite nanoscale architecture that combines the self-organization and molecular dynamics of lipid membranes with a corrugated nanotextured silicon wafer was prepared and characterized with fluorescence microscopy and scanning probe microscopy. The goal of this project was to understand how such structures can be assembled for supported membrane research and how the interfacial interactions between the solid substrate and the soft, self-assembled material create unique physical and mechanical behavior through the confinement of phases in the membrane. The nanometer scale structure of the silicon wafer was produced through interference lithography followed by anisotropic wet etching. For the present study, a line pattern with 100 nm line widths, 200 nm depth and a pitch of 360 nm pitch was fabricated. Lipid membranes were successfully adsorbed on the structured silicon surface via membrane fusion techniques. The surface topology of the bilayer-Si structure was imaged using in situ tapping mode atomic force microscopy (AFM). The membrane was observed to drape over the silicon structure producing an undulated topology with amplitude of 40 nm that matched the 360 nm pitch of the silicon structure. Fluorescence recovery after photobleaching (FRAP) experiments found that on the microscale those same structures exhibit anisotropic lipid mobility that was coincident with the silicon substructure. The results showed that while the lipid membrane maintains much of its self-assembled structure in the composite architecture, the silicon substructure indeed influences the dynamics of the molecular motion within the membrane.

  6. Observation of acoustic valley vortex states and valley-chirality locked beam splitting

    Science.gov (United States)

    Ye, Liping; Qiu, Chunyin; Lu, Jiuyang; Wen, Xinhua; Shen, Yuanyuan; Ke, Manzhu; Zhang, Fan; Liu, Zhengyou

    2017-05-01

    We report an experimental observation of the classical version of valley polarized states in a two-dimensional hexagonal sonic crystal. The acoustic valley states, which carry specific linear momenta and orbital angular momenta, were selectively excited by external Gaussian beams and conveniently confirmed by the pressure distribution outside the crystal, according to the criterion of momentum conservation. The vortex nature of such intriguing bulk crystal states was directly characterized by scanning the phase profile inside the crystal. In addition, we observed a peculiar beam-splitting phenomenon, in which the separated beams are constructed by different valleys and locked to the opposite vortex chirality. The exceptional sound transport, encoded with valley-chirality locked information, may serve as the basis of designing conceptually interesting acoustic devices with unconventional functions.

  7. 77 FR 33237 - Saline Valley Warm Springs Management Plan/Environmental Impact Statement, Death Valley National...

    Science.gov (United States)

    2012-06-05

    ... resources within this remote area, many people associate Saline Valley only with Warm Springs. Since the... by partnerships between the NPS and the Tribe. As a consequence of conflicting perceptions and values...

  8. College in Paradise! (Paradise Valley Shopping Mall).

    Science.gov (United States)

    Schoolland, Lucile B.

    Rio Salado Community College (RSCC), a non-campus college within the Maricopa Community College District, offers hundreds of day, late afternoon, and evening classes at locations throughout the county. The Paradise Valley community had always participated heavily in the evening classes offered by RSCC at local high schools. In fall 1982, an effort…

  9. Businessman's Efforts Help Reinvent Valley Tech

    Science.gov (United States)

    Pedersen, Diane B.

    2007-01-01

    Machine shop and metal fabrication programs across the country have struggled since the mid-1980s when the rise in global competition resulted in more manufacturing jobs going overseas. Blackstone Valley Regional Vocational Technical High School in Upton, Massachusetts, was able to keep its program up and running due in large part to its…

  10. Babesiosis in Lower Hudson Valley, New York

    Centers for Disease Control (CDC) Podcasts

    2011-05-12

    This podcast discusses a study about an increase in babesiosis in the Lower Hudson Valley of New York state. Dr. Julie Joseph, Assistant Professor of Medicine at New York Medical College, shares details of this study.  Created: 5/12/2011 by National Center for Emerging Zoonotic and Infectious Diseases (NCEZID).   Date Released: 5/23/2011.

  11. 27 CFR 9.103 - Mimbres Valley.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Mimbres Valley. 9.103 Section 9.103 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT... Counties, New Mexico. The boundaries are as follows: The beginning point is located at Faywood Station on...

  12. 27 CFR 9.23 - Napa Valley.

    Science.gov (United States)

    2010-04-01

    ... Valley viticultural area is located within Napa County, California. From the beginning point at the conjuction of the Napa County-Sonoma County line and the Napa County-Lake County line, the boundary runs along— (1) The Napa County-Lake County line; (2) Putah Creek and the western and southern shores of Lake...

  13. 27 CFR 9.76 - Knights Valley.

    Science.gov (United States)

    2010-04-01

    ... Valley viticultural area is located in northeastern Sonoma County, California. From the beginning point lying at the intersection of the Sonoma/Lake County line and the north line of Section 11, Township 10...,” and “Mount St. Helena Quadrangle” maps to the point of intersection with the Lake County line on the...

  14. Business plan Hatchery Facility Zambezi Valley, Mozambique

    NARCIS (Netherlands)

    Vernooij, A.G.; Wilschut, S.

    2015-01-01

    This business plan focuses on the establishment of a hatchery, one of the essential elements of a sustainable and profitable poultry meat value chain. There is a growing demand for poultry meat in the Zambezi Valley, and currently a large part of the consumed broilers comes from other parts of the

  15. Range management research, Fort Valley Experimental Forest

    Science.gov (United States)

    Henry A. Pearson; Warren P. Clary; Margaret M. Moore; Carolyn Hull Sieg

    2008-01-01

    Range management research at the Fort Valley Experimental Forest during the past 100 years has provided scientific knowledge for managing ponderosa pine forests and forest-range grazing lands in the Southwest. Three research time periods are identified: 1908 to 1950, 1950 to 1978, and 1978 to 2008. Early research (1908-1950) addressed ecological effects of livestock...

  16. Poultry Slaughter facility Zambezi Valley, Mozambique

    NARCIS (Netherlands)

    Vernooij, A.G.; Wilschut, S.

    2015-01-01

    This business plan focuses on the establishment of a slaughterhouse, one of the essential elements of a sustainable and profitable poultry meat value chain. There is a growing demand for poultry meat in the Zambezi Valley, and currently a large part of the consumed broilers comes from other parts of

  17. Rift Valley fever: A neglected zoonotic disease?

    Science.gov (United States)

    Rift Valley fever (RVF) is a serious viral disease of animals and humans in Africa and the Middle East that is transmitted by mosquitoes. First isolated in Kenya during an outbreak in 1930, subsequent outbreaks have had a significant impact on animal and human health, as well as national economies. ...

  18. Pumpernickel Valley Geothermal Project Thermal Gradient Wells

    Energy Technology Data Exchange (ETDEWEB)

    Z. Adam Szybinski

    2006-01-01

    The Pumpernickel Valley geothermal project area is located near the eastern edge of the Sonoma Range and is positioned within the structurally complex Winnemucca fold and thrust belt of north-central Nevada. A series of approximately north-northeast-striking faults related to the Basin and Range tectonics are superimposed on the earlier structures within the project area, and are responsible for the final overall geometry and distribution of the pre-existing structural features on the property. Two of these faults, the Pumpernickel Valley fault and Edna Mountain fault, are range-bounding and display numerous characteristics typical of strike-slip fault systems. These characteristics, when combined with geophysical data from Shore (2005), indicate the presence of a pull-apart basin, formed within the releasing bend of the Pumpernickel Valley – Edna Mountain fault system. A substantial body of evidence exists, in the form of available geothermal, geological and geophysical information, to suggest that the property and the pull-apart basin host a structurally controlled, extensive geothermal field. The most evident manifestations of the geothermal activity in the valley are two areas with hot springs, seepages, and wet ground/vegetation anomalies near the Pumpernickel Valley fault, which indicate that the fault focuses the fluid up-flow. There has not been any geothermal production from the Pumpernickel Valley area, but it was the focus of a limited exploration effort by Magma Power Company. In 1974, the company drilled one exploration/temperature gradient borehole east of the Pumpernickel Valley fault and recorded a thermal gradient of 160oC/km. The 1982 temperature data from five unrelated mineral exploration holes to the north of the Magma well indicated geothermal gradients in a range from 66 to 249oC/km for wells west of the fault, and ~283oC/km in a well next to the fault. In 2005, Nevada Geothermal Power Company drilled four geothermal gradient wells, PVTG-1

  19. Silicon force sensor

    Energy Technology Data Exchange (ETDEWEB)

    Galambos, Paul C.; Crenshaw, Thomas B.; Nishida, Erik E.; Burnett, Damon J.; Lantz, Jeffrey W.

    2016-07-05

    The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.

  20. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...... from 25 N/mm(2) to 0 N/mm(2) at 200 degrees C. A weak dependence on feature size was observed. For bonding temperatures higher than 300 degrees C fracture occurs randomly in the bulk of the silicon, whereas for bonding temperatures lower than 300 degrees C fracture always occurs at the bonding...

  1. Silicon Carbide Nanotube Synthesized

    Science.gov (United States)

    Lienhard, Michael A.; Larkin, David J.

    2003-01-01

    Carbon nanotubes (CNTs) have generated a great deal of scientific and commercial interest because of the countless envisioned applications that stem from their extraordinary materials properties. Included among these properties are high mechanical strength (tensile and modulus), high thermal conductivity, and electrical properties that make different forms of single-walled CNTs either conducting or semiconducting, and therefore, suitable for making ultraminiature, high-performance CNT-based electronics, sensors, and actuators. Among the limitations for CNTs is their inability to survive in high-temperature, harsh-environment applications. Silicon carbon nanotubes (SiCNTs) are being developed for their superior material properties under such conditions. For example, SiC is stable in regards to oxidation in air to temperatures exceeding 1000 C, whereas carbon-based materials are limited to 600 C. The high-temperature stability of SiCNTs is envisioned to enable high-temperature, harsh-environment nanofiber- and nanotube-reinforced ceramics. In addition, single-crystal SiC-based semiconductors are being developed for hightemperature, high-power electronics, and by analogy to CNTs with silicon semiconductors, SiCNTs with single-crystal SiC-based semiconductors may allow high-temperature harsh-environment nanoelectronics, nanosensors, and nanoactuators to be realized. Another challenge in CNT development is the difficulty of chemically modifying the tube walls, which are composed of chemically stable graphene sheets. The chemical substitution of the CNTs walls will be necessary for nanotube self-assembly and biological- and chemical-sensing applications. SiCNTs are expected to have a different multiple-bilayer wall structure, allowing the surface Si atoms to be functionalized readily with molecules that will allow SiCNTs to undergo self-assembly and be compatible with a variety of materials (for biotechnology applications and high-performance fiber-reinforced ceramics).

  2. Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

    Directory of Open Access Journals (Sweden)

    Eugenijus SHATKOVSKIS

    2012-09-01

    Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

  3. Silicon Quantum Dots for Quantum Information Processing

    Science.gov (United States)

    2013-11-01

    16 2.2.2 Si/SiGe Heterostructures . . . . . . . . . . . . . . . . . . . 18 2.2.3 Silicon Nanowires ...Recently, silicon MOS, silicon/silicon- germanium (Si/SiGe) heterostructures and silicon nanowire architectures have also achieved spin manipulation and...Churchill, D. J. Reilly, J. Xiang, C. M. Lieber, and C. M. Marcus. A Ge/Si heterostructure nanowire -based double quantum dot with integrated charge

  4. Solar silicon refining; Inclusions, settling, filtration, wetting

    OpenAIRE

    Ciftja, Arjan

    2009-01-01

    The main objective of the present work is the removal of inclusions from silicon scrap and metallurgical grade silicon. To reach this goal, two various routes are investigated. First, settling of SiC particles from molten silicon followed by directional solidification is reported in this thesis. Then, removal of SiC and Si3N4 inclusions in silicon scrap by filtration with foam filters and wettabilities of silicon on graphite materials are studied. To supply the increasing needs of the...

  5. A valley-filtering switch based on strained graphene.

    Science.gov (United States)

    Zhai, Feng; Ma, Yanling; Zhang, Ying-Tao

    2011-09-28

    We investigate valley-dependent transport through a graphene sheet modulated by both the substrate strain and the fringe field of two parallel ferromagnetic metal (FM) stripes. When the magnetizations of the two FM stripes are switched from the parallel to the antiparallel alignment, the total conductance, valley polarization and valley conductance excess change greatly over a wide range of Fermi energy, which results from the dependence of the valley-related transmission suppression on the polarity configuration of inhomogeneous magnetic fields. Thus the proposed structure exhibits the significant features of a valley-filtering switch and a magnetoresistance device.

  6. Characterization of silicon-silicon carbide ceramic derived from carbon-carbon silicon carbide composites

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Vijay K. [Indian Institute of Technology, Varanasi (India). Dept. of Mechanical Engineering; Krenkel, Walter [Univ. of Bayreuth (Germany). Dept. of Ceramic Materials Engineering

    2013-04-15

    The main objective of the present work is to process porous silicon - silicon carbide (Si - SiC) ceramic by the oxidation of carboncarbon silicon carbide (C/C - SiC) composites. Phase studies are performed on the oxidized porous composite to examine the changes due to the high temperature oxidation. Further, various characterization techniques are performed on Si- SiC ceramics in order to study the material's microstructure. The effects of various parameters such as fiber alignment (twill weave and short/chopped fiber) and phenolic resin type (resol and novolak) are characterized.

  7. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...

  8. Optical information capacity of silicon

    CERN Document Server

    Dimitropoulos, Dimitris

    2014-01-01

    Modern computing and data storage systems increasingly rely on parallel architectures where processing and storage load is distributed within a cluster of nodes. The necessity for high-bandwidth data links has made optical communication a critical constituent of modern information systems and silicon the leading platform for creating the necessary optical components. While silicon is arguably the most extensively studied material in history, one of its most important attributes, an analysis of its capacity to carry optical information, has not been reported. The calculation of the information capacity of silicon is complicated by nonlinear losses, phenomena that emerge in optical nanowires as a result of the concentration of optical power in a small geometry. Nonlinear losses are absent in silica glass optical fiber and other common communication channels. While nonlinear loss in silicon is well known, noise and fluctuations that arise from it have never been considered. Here we report sources of fluctuations...

  9. Characterization of Czochralski Silicon Detectors

    CERN Document Server

    Luukka, Panja-Riina

    2012-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alternative for future highenergy physics experiments. In the large hadron collider (LHC), the RH of the detectorsis a critical issue due to the high luminosity (1034 cm-2s-1) corresponding to the expectedtotal fluencies of fast hadrons above 1015 cm-2. This RH improvement is important sinceradiation damage in the detector bulk material reduces the detector performance andbecause some of the devices produced from standard detector-grade silicon, e.g. FZsilicon with negligible oxygen concentration, might not survive the plann...

  10. SILICONE RUBBER MOULDS FOR FOOTWEAR

    Directory of Open Access Journals (Sweden)

    Cornelia LUCA

    2013-05-01

    Full Text Available The leather confections industry uses the silicone rubber moulds for the symbols,notices and models stamping on the footwear or morocco goods parts. The paper presents somecontributions in this kind of devices manufacturing technology

  11. Silicon Solar Cell Turns 50

    Energy Technology Data Exchange (ETDEWEB)

    Perlin, J.

    2004-08-01

    This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

  12. Ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

    2013-12-01

    We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

  13. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  14. New applications of silicon micromachining

    Energy Technology Data Exchange (ETDEWEB)

    Lauf, R.J.; Wood, R.F.; Fleming, P.H.; Bauer, M.L.

    1988-06-01

    The use of photolithography and anisotropic etching of silicon wafers to make strong, thin membranes has created a large family of miniature sensing devices such as pressure transducers and accelerometers. This report describes several entirely new devices in which silicon membranes are used for their strength and for their transparency to certain kinds of radiation. Two applications are described: a rugged alpha detector and a fluid sample cell for small-angle x-ray scattering. 8 refs., 12 figs., 2 tabs.

  15. Topological Order in Silicon Photonics

    Science.gov (United States)

    2017-02-07

    AFRL-AFOSR-VA-TR-2017-0037 Topological orders in Silicon photonics Mohammad Hafezi MARYLAND UNIV COLLEGE PARK 3112 LEE BLDG COLLEGE PARK, MD 20742...15 SEP 2016 4. TITLE AND SUBTITLE Topological Order in Silicon Photonics 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA-9550-14-1-0267 5c. PROGRAM...DISTRIBUTION/AVAILABILITY STATEMENT DISTRIBUTION A: Distribution approved for public release. 13. SUPPLEMENTARY NOTES 14. ABSTRACT Topological features

  16. Silicon Sensors for HEP Experiments

    CERN Document Server

    Dierlamm, Alexander Hermann

    2017-01-01

    With increasing luminosity of accelerators for experiments in High Energy Physics the demands on the detectors increase as well. Especially tracking and vertexing detectors made of silicon sensors close to the interaction point need to be equipped with more radiation hard devices. This article introduces the different types of silicon sensors, describes measures to increase radiation hardness and provides an overview of present upgrade choices of HEP experiments.

  17. Silicone nanocomposite coatings for fabrics

    Science.gov (United States)

    Eberts, Kenneth (Inventor); Lee, Stein S. (Inventor); Singhal, Amit (Inventor); Ou, Runqing (Inventor)

    2011-01-01

    A silicone based coating for fabrics utilizing dual nanocomposite fillers providing enhanced mechanical and thermal properties to the silicone base. The first filler includes nanoclusters of polydimethylsiloxane (PDMS) and a metal oxide and a second filler of exfoliated clay nanoparticles. The coating is particularly suitable for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts, boat sails, and inflatable shelters.

  18. Metallization of Large Silicon Wafers

    Science.gov (United States)

    Pryor, R. A.

    1978-01-01

    A metallization scheme was developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300 C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed.

  19. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration.......An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  20. The Homies in Silicon Valley: Figuring Styles of Life and Work in the Information Age

    Science.gov (United States)

    Marez, Curtis

    2006-01-01

    The dot-com crash of 2000-01 provides unique opportunities for historicizing what Manuel Castells calls the information age. This age is characterized by the dominance of information capital, a regime of accumulation organized around networks of computers and other information technologies whose production is partly centered in Northern…

  1. Kremli org - Venemaa ehitab oma Silicon Valley analoogi / Jaanus Piirsalu ; kommenteerinud Jaanus Piirsalu

    Index Scriptorium Estoniae

    Piirsalu, Jaanus, 1973-

    2010-01-01

    Venemaale kavatsetakse rajada tehnoloogia arendamise ja innovatsiooni piirkond, mille eest vastutab presidendi administratsioni asejuht Vladislav Surkov. Linnakesele on pandud tinglik nimi - Innograd. Diagrammid

  2. View from Silicon Valley: Maximizing the Scientific Impact of Global Brain Initiatives through Entrepreneurship.

    Science.gov (United States)

    Joshi, Pushkar S; Ghosh, Kunal K

    2016-11-02

    In this era of technology-driven global neuroscience initiatives, the role of the neurotechnology industry remains woefully ambiguous. Here, we explain why industry is essential to the success of these global initiatives, and how it can maximize the scientific impact of these efforts by (1) scaling and ultimately democratizing access to breakthrough neurotechnologies, and (2) commercializing technologies as part of integrated, end-to-end solutions that accelerate neuroscientific discovery. Copyright © 2016 Elsevier Inc. All rights reserved.

  3. Digital VLSI design with Verilog a textbook from Silicon Valley Polytechnic Institute

    CERN Document Server

    Williams, John Michael

    2014-01-01

    This book is structured as a step-by-step course of study along the lines of a VLSI integrated circuit design project.  The entire Verilog language is presented, from the basics to everything necessary for synthesis of an entire 70,000 transistor, full-duplex serializer-deserializer, including synthesizable PLLs.  The author includes everything an engineer needs for in-depth understanding of the Verilog language:  Syntax, synthesis semantics, simulation, and test. Complete solutions for the 27 labs are provided in the downloadable files that accompany the book.  For readers with access to appropriate electronic design tools, all solutions can be developed, simulated, and synthesized as described in the book.   A partial list of design topics includes design partitioning, hierarchy decomposition, safe coding styles, back annotation, wrapper modules, concurrency, race conditions, assertion-based verification, clock synchronization, and design for test.   A concluding presentation of special topics inclu...

  4. Follow the Money: Engineering at Stanford and UC Berkeley during the Rise of Silicon Valley

    Science.gov (United States)

    Adams, Stephen B.

    2009-01-01

    A comparison of the engineering schools at UC Berkeley and Stanford during the 1940s and 1950s shows that having an excellent academic program is necessary but not sufficient to make a university entrepreneurial (an engine of economic development). Key factors that made Stanford more entrepreneurial than Cal during this period were superior…

  5. Managing the multigenerational workforce: Lessons German companies can learn from Silicon Valley

    OpenAIRE

    Klaffke, Martin

    2015-01-01

    Germany is undergoing a dramatic demographic change that requires its organizations to make workforce talent of all ages a strategic priority. Practitioners in Germany focus largely on Generation Y employees, because this young employee cohort expresses new and different work-related values. However, diverse attitudes and behaviours of employees of different age groups can poten­tially lead to conflict and have an overall negative impact on orga­nizational performance. Given US labour legis...

  6. Imagining a Silicon Valley : technological and conceptual connectivity in Kenya's BPO and software development sectors

    NARCIS (Netherlands)

    Mann, L.; Graham, M.

    2013-01-01

    This is a paper about expectations surrounding a potentially highly transformative moment in East Africa's history: the arrival of underwater fibre-optic broadband communications cables into the Indian Ocean port of Mombasa. It combines a media content analysis with findings from interviews with

  7. Annealing of silicon optical fibers

    Science.gov (United States)

    Gupta, N.; McMillen, C.; Singh, R.; Podila, R.; Rao, A. M.; Hawkins, T.; Foy, P.; Morris, S.; Rice, R.; Poole, K. F.; Zhu, L.; Ballato, J.

    2011-11-01

    The recent realization of silicon core optical fibers has the potential for novel low insertion loss rack-to-rack optical interconnects and a number of other uses in sensing and biomedical applications. To the best of our knowledge, incoherent light source based rapid photothermal processing (RPP) was used for the first time to anneal glass-clad silicon core optical fibers. X-ray diffraction examination of the silicon core showed a considerable enhancement in the length and amount of single crystallinity post-annealing. Further, shifts in the Raman frequency of the silicon in the optical fiber core that were present in the as-drawn fibers were removed following the RPP treatment. Such results indicate that the RPP treatment increases the local crystallinity and therefore assists in the reduction of the local stresses in the core, leading to more homogenous fibers. The dark current-voltage characteristics of annealed silicon optical fiber diodes showed lower leakage current than the diodes based on as-drawn fibers. Photons in UV and vacuum ultraviolet (VUV) regions play a very important role in improving the bulk and carrier transport properties of RPP-treated silicon optical fibers, and the resultant annealing permits a path forward to in situ enhancement of the structure and properties of these new crystalline core optical fibers.

  8. Groundwater quality in the Owens Valley, California

    Science.gov (United States)

    Dawson, Barbara J. Milby; Belitz, Kenneth

    2012-01-01

    Groundwater provides more than 40 percent of California’s drinking water. To protect this vital resource, the State of California created the Groundwater Ambient Monitoring and Assessment (GAMA) Program. The Priority Basin Project of the GAMA Program provides a comprehensive assessment of the State’s groundwater quality and increases public access to groundwater-quality information. Owens Valley is one of the study areas being evaluated. The Owens study area is approximately 1,030 square miles (2,668 square kilometers) and includes the Owens Valley groundwater basin (California Department of Water Resources, 2003). Owens Valley has a semiarid to arid climate, with average annual rainfall of about 6 inches (15 centimeters). The study area has internal drainage, with runoff primarily from the Sierra Nevada draining east to the Owens River, which flows south to Owens Lake dry lakebed at the southern end of the valley. Beginning in the early 1900s, the City of Los Angeles began diverting the flow of the Owens River to the Los Angeles Aqueduct, resulting in the evaporation of Owens Lake and the formation of the current Owens Lake dry lakebed. Land use in the study area is approximately 94 percent (%) natural, 5% agricultural, and 1% urban. The primary natural land cover is shrubland. The largest urban area is the city of Bishop (2010 population of 4,000). Groundwater in this basin is used for public and domestic water supply and for irrigation. The main water-bearing units are gravel, sand, silt, and clay derived from surrounding mountains. Recharge to the groundwater system is primarily runoff from the Sierra Nevada, and by direct infiltration of irrigation. The primary sources of discharge are pumping wells, evapotranspiration, and underflow to the Owens Lake dry lakebed. The primary aquifers in Owens Valley are defined as those parts of the aquifers corresponding to the perforated intervals of wells listed in the California Department of Public Health database

  9. Influence of oxygen-vacancy complex /A center/ on piezoresistance of n-type silicon.

    Science.gov (United States)

    Littlejohn, M. A.; Loggins, C. D., Jr.

    1972-01-01

    Changes in both magnitude and temperature dependence of the piezoresistance of electron-irradiated n-type silicon, induced by the latter's oxygen-vacancy complex (A center), are shown to be due to the fact that the presence of the A center causes the total conduction-band electron concentration to change with an applied stress. This change in electron concentration leads to an additional piezoresistance contribution that is expected to be important in certain many-valley semiconductors. This offers the possibility of tailoring the thermal variations of semiconductor mechanical sensors to more desirable values over limited temperature ranges.

  10. Direct Production of Silicones From Sand

    Energy Technology Data Exchange (ETDEWEB)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  11. Silicon Photomultiplier charaterization

    Science.gov (United States)

    Munoz, Leonel; Osornio, Leo; Para, Adam

    2014-03-01

    Silicon Photo Multiples (SiPM's) are relatively new photon detectors. They offer many advantages compared to photo multiplier tubes (PMT's) such as insensitivity to magnetic field, robustness at varying lighting levels, and low cost. The SiPM output wave forms are poorly understood. The experiment conducted collected waveforms of responses of Hamamatsu SiPM to incident laser pulse at varying temperatures and bias voltages. Ambient noise was characterized at all temperatures and bias voltages by averaging the waveforms. Pulse shape of the SiPM response was determined under different operating conditions: the pulse shape is nearly independent of the bias voltage but exhibits strong variation with temperature, consistent with the temperature variation of the quenching resistor. Amplitude of responses of the SiPM to low intensity laser light shows many peaks corresponding to the detection of 1,2,3 etc. photons. Amplitude of these pulses depends linearly on the bias voltage, enabling determination of the breakdown voltage at each temperature. Poisson statistics has been used to determine the average number of detected photons at each operating conditions. Department of Education Grant No. P0315090007 and the Department of Energy/ Fermi National Accelerator Laboratory.

  12. Silicon Carbide Growth

    Science.gov (United States)

    2005-01-01

    Andrew Trunek has focused on supporting the Sic team through the growth of Sic crystals, making observations and conducting research that meets the collective needs and requirements of the team while fulfilling program commitments. Cancellation of the Ultra Efficient Engine Technology (UEET) program has had a significant negative impact on resources and research goals. This report highlights advancements and achievements made with this cooperative agreement over the past year. NASA Glenn Research Center (GRC) continues to make advances in silicon carbide (SiC) research during the past year. Step free surfaces were used as substrates for the deposition of GaN epilayers that yielded very low dislocation densities. Defect free 3C- SiC was successfully nucleated on step free mesas and test diodes were fabricated. Web growth techniques were used to increase the usable surface area of dislocation free SiC by approximately equal to 40%. The greatest advancement has been attained on stepped surfaces of SiC. A metrology standard was developed using high temperature etching techniques titled "Nanometer Step Height Standard". This development culminated in being recognized for a 2004 R&D100 award and the process to produce the steps received a NASA Space Act award.

  13. Collimation: a silicon solution

    CERN Multimedia

    2007-01-01

    Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

  14. Eco-Hydrological Modelling of Stream Valleys

    DEFF Research Database (Denmark)

    Johansen, Ole

    Predicting the effects of hydrological alterations on terrestrial stream valley ecosystems requires multidisciplinary approaches involving both engineers and ecologists. Groundwater discharge in stream valleys and other lowland areas support a number of species rich ecosystems, and their protection...... is prioritised worldwide. Protection requires improved knowledge on the functioning of these ecosystems and especially the linkages between vegetation, groundwater discharge and water level conditions are crucial for management applications. Groundwater abstraction affects catchment hydrology and thereby also...... groundwater discharge. Numerical hydrological modelling has been widely used for evaluation of sustainable groundwater resources and effects of abstraction, however, the importance of local scale heterogeneity becomes increasingly important in the assessment of local damage to these groundwater dependent...

  15. Hydrogeochemical assessment of groundwater in Kashmir Valley ...

    Indian Academy of Sciences (India)

    Hydrogeochemical assessment of groundwater in Kashmir Valley, India. 1033. Figure 1. Geology of the study area and the location of sampling sites. 4. Results and discussion ..... 1036. G H Jeelani et al. F ig u re. 2 . Spa tia l v a ria tio n o f m a jo r io ns in g ro undw a ter a cro ss the a llu via l ba sin o f the. Ka sh mir. V a lley.

  16. 27 CFR 9.35 - Edna Valley.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Edna Valley. 9.35 Section 9.35 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF... identified as “T31S/T32S” on the U.S.G.S. map; (4) Thence east along township line “T31S/T32S”, across Price...

  17. Flood Frequency Analysis of Main Nara Valley

    OpenAIRE

    Manohar Lal; Bakhshal Khan Lashari; Khalifa Qasim Laghari

    2011-01-01

    This paper deals with the flood of 2007 and its frequency analysis at MNY (Main Nara Valley), and generally describe flood of 2010 in Sindh Pakistan. Heavy monsoon rain and cyclones cause the flood conditions in Sindh. The damages happened to the infrastructure of the MNVD from RD (Reduced Distance) 0-100 and the ecological impacts of the flood on the local region of Taluka Johi, District Dadu. For flood risk assessment and its description, knowledge of extreme flood events and...

  18. Valley-polarized metals and quantum anomalous Hall effect in silicene.

    Science.gov (United States)

    Ezawa, Motohiko

    2012-08-03

    Silicene is a monolayer of silicon atoms forming a two-dimensional honeycomb lattice, which shares almost every remarkable property with graphene. The low-energy structure of silicene is described by Dirac electrons with relatively large spin-orbit interactions due to its buckled structure. The key observation is that the band structure is controllable by applying electric field to silicene. We explore the phase diagram of silicene together with exchange field M and by applying electric field E(z). A quantum anomalous Hall (QAH) insulator, valley polarized metal (VPM), marginal valley polarized metal (M-VPM), quantum spin Hall insulator, and band insulator appear. They are characterized by the Chern numbers and/or by the edge modes of a nanoribbon. It is intriguing that electrons have been moved from a conduction band at the K point to a valence band at the K' point for E(z) > 0 in the VPM. We find in the QAH phase that almost flat gapless edge modes emerge and that spins form a momentum-space Skyrmion to yield the Chern number. It is remarkable that a topological quantum phase transition can be induced simply by changing electric field in a single silicene sheet.

  19. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift

    2015-06-01

    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

  20. Silicon nitride passivated bifacial Cz-silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Janssen, L. [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); Solland Solar Cells GmbH, Bohr 12, 52072 Aachen (Germany); Windgassen, H.; Baetzner, D.L. [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); Bitnar, B.; Neuhaus, H. [Deutsche Cell GmbH, Berthelsdorfer Str. 111a, 09599 Freiberg (Germany)

    2009-08-15

    A new process for all silicon nitride passivated silicon solar cells with screen printed contacts is analysed in detail. Since the contacts are fired through the silicon nitride layers on both sides, the process is easy to adapt to industrial production. The potential and limits of the presented bifacial design are simulated and discussed. The effectiveness of the presented process depends strongly on the base doping of the substrate, but only the open circuit voltage is affected. The current is mainly determined by the rear surface passivation properties. Thus, using a low resistivity (<1.5{omega}cm) base material higher efficiencies compared to an aluminium back surface field can be achieved. (author)

  1. Silicon nitride equation of state

    Science.gov (United States)

    Brown, Robert C.; Swaminathan, Pazhayannur K.

    2017-01-01

    This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

  2. Nanocrystalline silicon in biological studies

    Energy Technology Data Exchange (ETDEWEB)

    Fucikova, Anna [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16, Prague 2 (Czech Republic); Institute of Physics AS CR, v. v. i., Cukrovarnicka 10, 162 53 Prague 6 (Czech Republic); Valenta, Jan [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16, Prague 2 (Czech Republic); Pelant, Ivan; Kusova, Katerina [Institute of Physics AS CR, v. v. i., Cukrovarnicka 10, 162 53 Prague 6 (Czech Republic); Brezina, Vitezslav [Institute of Systems Biology and Ecology AS CR, v. v. i., Zamek 136, 373 33 Nove Hrady (Czech Republic)

    2011-03-15

    Porous silicon and similar materials, like micro- and nanocrystalline silicon, are nowadays studied not only in physical research (e.g. optical gain studies, electro-optical devices, solar energy conversion), but they are very promising also in biological research as fluorescent labels, biological sensors, drug delivery systems or scaffold for various tissues. We are giving an overview of various approaches of preparation of micro- and nanocrystalline silicon and current studies of applications with main focus on biology and medicine. In contrast to other nanomaterials used in biological studies (e.g. carbon nanotubes, fullerenes, cadmium containing quantum dots) silicon based nanomaterials show very good biocompatibility and low cytotoxicity. Therefore, these materials have potential to become powerful tools for in vivo investigation of life processes on subcellular and molecular level. Our group concentrates on developing of gentle fluorescent label based on porous silicon for single molecule detection in the cell. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Tin oxide - silicon dioxide - silicon MIS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Llabres, K.; Dominguez, E.; Lora-Tamayo, E.; Arjona, F.

    1981-01-01

    The results obtained in tin oxide-silicon dioxide-n type silicon Schottky barrier solar cells are presented. Samples were prepared in a two-zone furnace where the thermal oxidation of the wafer and the SnO/sub 2/ deposition were carried out without further handling. The tin oxide layer was grown using a gas transport method in an open tube. The characteristic parameters of the solar cell performance gave the following results: short circuit current density.21 mA/cm/sup 2/, open circuit voltage.550 mV. 7 refs.

  4. Viie jõukama riigi asemel viie ebavõrdsema hulka / Marika Tuus

    Index Scriptorium Estoniae

    Tuus, Marika, 1951-

    2007-01-01

    Ilmunud ka: Severnoje Poberezhje, 24. aug. 2007, lk. 2; Elva Postipoiss, 25. aug. 2007, lk. 4; Lääne Elu, 28. aug. 2007, lk. 2; Oma Saar, 28. aug. 2007, lk. 5; Nädaline, 28. aug. 28. aug. 2007, lk. 5; Molodjozh Estonii, 13. sept. 2007, lk. 4. Parlamendiliikme, keskerakondlase kriitika peaminister Andrus Ansipi ja Reformierakonna aadressil

  5. Pärast meid tulgu või veeuputus / Marika Tuus

    Index Scriptorium Estoniae

    Tuus, Marika, 1951-

    2007-01-01

    Ilmunud ka: Meie Maa, 10. okt. 2007, lk. 2; Molodjozh Estonii, 9. okt. 2007, lk. 5; Koit (avald. lühend.), 9. okt. 2007, lk. 6; Lääne Elu, 9. okt. 2007, lk. 2; Vooremaa, 11. okt. 2007, lk. 2; Harju Ekspress, 12. okt. 2007, lk. 6; Võrumaa Teataja, 16. okt. 2007, lk. 2. Parlamendiliige kritiseerib kolmikliidu pensionipoliitikat

  6. Tööandjate unistuste seaduse autorid olid tegelikult sotsid / Marika Tuus

    Index Scriptorium Estoniae

    Tuus, Marika, 1951-

    2008-01-01

    Uue töölepingu seaduse eelnõust. Ilmunud ka Virumaa Teataja 29. jaan. 2008, lk. 11 ; Hiiu Leht 29. jaan. 2008, lk. 2 ; Pärnu Postimees 29. jaan. 2008, lk. 15 ; Vali Uudised 30. jaan. 2008, lk. 2, pealkiri kujul: uus orjaaeg ; Meie Maa 29. jaan. 2008, lk. 2 ; Põhjarannik 30. jaan. 2008, lk. 2 ; Lääne Elu 29. jaan. 2008, lk. 2 ; Elva Postipoiss 2. veeb. 2008, lk. 4, pealkiri kujul: Kas uus orjaaeg? ; Kesknädal 6. veeb. 2008, lk. 2 ; Vooremaa 14. veeb. 2008, lk. 2

  7. Ökoloogiline maksureform tooks kaasa elektrihinna hüppelise tõusu / Marika Tuus

    Index Scriptorium Estoniae

    Tuus, Marika, 1951-

    2005-01-01

    Ilmunud ka: Videvik 4. august lk. 3, Elva Postipoiss 19. august lk. 4. Majandusministeeriumis tehtud kiiranalüüsist, mida keskkonnatasude mitmekordne tõus meile majanduslikult kaasa tooks ja millist mõju see lõppkokkuvõttes tarbijale avaldaks

  8. Silicon Nitride Bearings for Total Joint Arthroplasty

    National Research Council Canada - National Science Library

    McEntire, Bryan; Lakshminarayanan, Ramaswamy; Ray, Darin; Clarke, Ian; Puppulin, Leonardo; Pezzotti, Giuseppe

    2016-01-01

      The articulation performance of silicon nitride against conventional and highly cross-linked polyethylene, as well as for self-mated silicon nitride bearings, was examined in a series of standard hip simulation studies...

  9. Optical manipulation of valley pseduospin in 2D semiconductors

    Science.gov (United States)

    Ye, Ziliang

    Valley polarization associated with the occupancy in the energy degenerate but quantum mechanically distinct valleys in the momentum space closely resembles spin polarization and has been proposed as a pseudospin carrier for future quantum information technologies. Monolayers of transition metal dichalcogenide (TMDC) crystals, with broken inversion symmetry and large spin-orbital coupling, support robust valley polarization and therefore provide an important platform for studying valley-dependent physics. Besides optical excitation and photoluminescence detection, valley polarization has been electrically measured through the valley Hall effect and created through spin injection from ferromagnetic semiconductor contacts. Moreover, the energy degeneracy of the valley degree of freedom has been lifted by the optical Stark effect. Recently, we have demonstrated optical manipulation of valley coherence, i.e., of the valley pseudospin, by the optical Stark effect in monolayer WSe2. Using below-bandgap circularly polarized light, we rotated the valley pseudospin on the femtosecond time scale. Both the direction and speed of the rotation can be optically controlled by tuning the dynamic phase of excitons in opposite valleys. The pseudospin rotation was identified by changes in the polarization of the photoluminescence. In addition, by varying the time delay between the excitation and control pulses, we directly probed the lifetime of the intervalley coherence. Similar rotation levels have also been observed in static magneto-optic experiments. Our work presents an important step towards the full control of the valley degree of freedom in 2D semiconductors. The work was done in collaboration with Dr. Dezheng Sun and Prof. Tony F. Heinz.

  10. Hydrologic reconnaissance of Rush Valley, Tooele County, Utah

    Science.gov (United States)

    Hood, James W.; Price, Don; Waddell, K.M.

    1969-01-01

    This report is the third in a series by the U. S. Geological Survey in cooperation with the Utah Department of Natural Resources, Division of Water Rights, which describes the water resources of the western basins of Utah. Its purpose is to present available hydrologic data for Rush Valley, to provide an evaluation of the potential water-resources development of the valley, and to identify needed studies that would help provide an understanding of the valley's water supply.

  11. Hydrologic reconnaissance of Skull Valley, Tooele County, Utah

    Science.gov (United States)

    Hood, James W.; Waddell, K.M.

    1968-01-01

    This report is the second in a series by the U.S. Geological Survey in cooperation with the Utah Department of Natural Resources, Division of Water Rights, which describes the water resources of the western basins of Utah. Its purpose is to present available hydrologic data on Skull Valley, to provide an evaluation of the potential water-resource development of the valley, and to identify needed studies that would help provide an understandingof the valley's water supply.

  12. The LHCb silicon tracker project

    CERN Document Server

    Blouw, J

    2004-01-01

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(IT) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry.

  13. SILICON REFINING BY VACUUM TREATMENT

    Directory of Open Access Journals (Sweden)

    André Alexandrino Lotto

    2014-12-01

    Full Text Available This work aims to investigate the phosphorus removal by vacuum from metallurgical grade silicon (MGSi (98.5% to 99% Si. Melting experiments were carried out in a vacuum induction furnace, varying parameters such as temperature, time and relation area exposed to the vacuum / volume of molten silicon. The results of chemical analysis were obtained by inductively coupled plasma (ICP, and evaluated based on thermodynamic and kinetic aspects of the reaction of vaporization of the phosphorus in the silicon. The phosphorus was decreased from 33 to approximately 1.5 ppm after three hours of vacuum treatment, concluding that the evaporation step is the controlling step of the process for parameters of temperature, pressure and agitation used and refining by this process is technically feasible.

  14. A silicon tracker for Christmas

    CERN Multimedia

    2008-01-01

    The CMS experiment installed the world’s largest silicon tracker just before Christmas. Marcello Mannelli: physicist and deputy CMS project leader, and Alan Honma, physicist, compare two generations of tracker: OPAL for the LEP (at the front) and CMS for the LHC (behind). There is quite a difference between 1m2 and 205m2.. CMS received an early Christmas present on 18 December when the silicon tracker was installed in the heart of the CMS magnet. The CMS tracker team couldn’t have hoped for a better present. Carefully wrapped in shiny plastic, the world’s largest silicon tracker arrived at Cessy ready for installation inside the CMS magnet on 18 December. This rounded off the year for CMS with a major event, the crowning touch to ten years of work on the project by over five hundred scientists and engineers. "Building a scientific instrument of this size and complexity is a huge technical a...

  15. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  16. Energy Harvesting from Energetic Porous Silicon

    Science.gov (United States)

    2016-07-01

    wafers backed with platinum are patterned into 2- mm devices with bridge wires (Fig. 1 [left]). Using a silicon nitride layer as a mask, the silicon is...ARL-TR-7719 ● JULY 2016 US Army Research Laboratory Energy Harvesting from Energetic Porous Silicon by Louis B Levine, Matthew...Harvesting from Energetic Porous Silicon by Louis B Levine Academy of Applied Science, Concord, NH Matthew H Ervin and Wayne A Churaman Sensors and

  17. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  18. Silicon nanocrystal inks, films, and methods

    Science.gov (United States)

    Wheeler, Lance Michael; Kortshagen, Uwe Richard

    2015-09-01

    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  19. Disorder-dependent valley properties in monolayer WSe2

    KAUST Repository

    Tran, Kha

    2017-07-19

    We investigate the effect of disorder on exciton valley polarization and valley coherence in monolayer WSe2. By analyzing the polarization properties of photoluminescence, the valley coherence (VC) and valley polarization (VP) are quantified across the inhomogeneously broadened exciton resonance. We find that disorder plays a critical role in the exciton VC, while affecting VP less. For different monolayer samples with disorder characterized by their Stokes shift (SS), VC decreases in samples with higher SS while VP does not follow a simple trend. These two methods consistently demonstrate that VC as defined by the degree of linearly polarized photoluminescence is more sensitive to disorder, motivating further theoretical studies.

  20. Subsurface stratigraphy of the eastern Hollister Valley, California

    Science.gov (United States)

    McMasters, Catherine R.; Herd, Darrell G.; Throckmorton, Constance K.; Heusser, Linda E.

    1987-01-01

    In September 1977, four cores were recovered by shallow auger drilling from Hollister Valley, California, near the Calaveras fault. The wells were drilled to search for evidence that Hollister Valley may have been occupied by a large lake during the late Pleistocene or Holocene. This small valley, near Monterey Bay, may have been dammed by a large landslide on the San Andreas fault (Jenkins, 1973; Herd and Helley, 1977). The cores sampled the first 38 m of sediment below the valley floor, but no lacustrine deposits were found at these sites; a very detailed record to Holocene alluviation in a tectonically subsiding basin. 

  1. Silicon sources for rice crop

    Directory of Open Access Journals (Sweden)

    Pereira Hamilton Seron

    2004-01-01

    Full Text Available Although silicon is not an essential nutrient, its application is beneficial for plant growth and development. To evaluate silicon sources in relation to agronomic efficiency and economic viability in rice crops (Oryza sativa L., a greenhouse experiment was conducted, Quartzipsamment soil, in a completely randomized experimental design (n = 4. Treatments were 12 silicon sources and a control. Silicon was applied at the rate of 125 kg Si ha-1. Data were compared to a standard response curve for Si using the standard source Wollastonite at rates of 0, 125, 250, 375, and 500 kg Si ha-1. All treatments received CaCO3 and MgCO3 to balance pH, Ca and Mg. One hundred and fifty days after sowing, evaluations on dry matter yield in the above-ground part of plants, grain yield, and Si contents in the soil and plant tissues were performed. Wollastonite had linear response, increasing silicon in the soil and plants with increasing application rates. Differences between silicon sources in relation to Si uptake were observed. Phosphate slag provided the highest Si uptake, followed by Wollastonite and electric furnace silicates which however, did not show differed among themselves. The highest Si accumulation in grain was observed for stainless steel, which significantly differed from the control, silicate clay, Wollastonite, and AF2 (blast furnace of the company 2 slag. Silicate clay showed the lowest Si accumulation in grain and did not differ from the control, AF2 slag, AF1 slag, schist ash, schist, and LD4 (furnace steel type LD of the company 4 slag.

  2. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  3. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  4. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  5. Microdefects in cast multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wolf, E.; Klinger, D.; Bergmann, S. [Inst. of Crystal Growth Berlin (Germany)

    1995-08-01

    The microdefect etching behavior of cast multicrystalline BAYSIX and SILSO samples is mainly the same as that of EFG silicon, in spite of the very different growth parameters applied to these two techniques and the different carbon contents of the investigated materials. Intentional decorating of mc silicon with copper, iron and gold did not influence the results of etching and with help of infrared transmission microscopy no metal precipitates at the assumed microdefects could be established. There are many open questions concerning the origin of the assumed, not yet doubtless proved microdefects.

  6. Advancements in silicon web technology

    Science.gov (United States)

    Hopkins, R. H.; Easoz, J.; Mchugh, J. P.; Piotrowski, P.; Hundal, R.

    1987-01-01

    Low defect density silicon web crystals up to 7 cm wide are produced from systems whose thermal environments are designed for low stress conditions using computer techniques. During growth, the average silicon melt temperature, the lateral melt temperature distribution, and the melt level are each controlled by digital closed loop systems to maintain thermal steady state and to minimize the labor content of the process. Web solar cell efficiencies of 17.2 pct AM1 have been obtained in the laboratory while 15 pct efficiencies are common in pilot production.

  7. A silicon microstrip gas chamber

    Energy Technology Data Exchange (ETDEWEB)

    Van der Marel, J. (Radiation Technology Group, Faculty of Applied Physics, Delft Univ. of Tech. (Netherlands)); Van den Bogaard, A. (Delft Inst. of Microelectronics and Submicrotechnology, Delft Univ. of Tech. (Netherlands)); Van Eijk, C.W.E. (Radiation Technology Group, Faculty of Applied Physics, Delft Univ. of Tech. (Netherlands)); Hollander, R.W. (Radiation Technology Group, Faculty of Applied Physics, Delft Univ. of Tech. (Netherlands)); Okx, W.J.C. (Radiation Technology Group, Faculty of Applied Physics, Delft Univ. of Tech. (Netherlands)); Sarro, P.M. (Delft Inst. of Microelectronics and Submicrotechnology, Delft Univ. of Tech. (Netherlands))

    1994-09-01

    We are manufacturing microstrip gas chambers (MSGC) on silicon with an insulating SiO[sub 2] layer. To study the effect of the sheet resistance of the SiO[sub 2] on the operation of the detector several processes to modify the SiO[sub 2] layer have been investigated: ion implantation, boron and phosphorus diffusion, phosphosilicate glass evaporation and polycrystalline silicon deposition. The dependence of the gas gain on the potentials of the different electrodes and the long term stability have been studied. ((orig.))

  8. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  9. Radiation effects in bulk silicon

    Science.gov (United States)

    Claeys, Cor; Vanhellemont, Jan

    1994-01-01

    This paper highlights important aspects related to irradiation effects in bulk silicon. Some basic principles related to the interaction of radiation with material, i.e. ionization and atomic displacement, are briefly reviewed. A physical understanding of radiation effects strongly depends on the availability of appropriate analytical tools. These tools are critically accessed from a silicon bulk viewpoint. More detailed information, related to the properties of the bulk damage and some dedicated application aspects, is given for both electron and proton irradiations. Emphasis is placed on radiation environments encountered during space missions and on their influence on the electrical performance of devices such as memories and image sensors.

  10. Silicon Nano-Photonic Devices

    DEFF Research Database (Denmark)

    Pu, Minhao

    to microwave systems and biosensing devices. An ultra-low loss inverse taper coupler for interfacing silicon ridge waveguides and optical bers is introduced and insertion losses of less than 1 dB are achieved for both transverse-electric (TE) and transversemagnetic (TM) polarizations. Integrated...... with the couplers, a silicon ridge waveguide is utilized in nonlinear all-optical signal processing for optical time division multiplexing (OTDM) systems. Record ultra-highspeed error-free optical demultiplexing and waveform sampling are realized and demonstrated for the rst time. Microwave phase shifters and notch...

  11. PECASE: New Directions for Silicon Integrated Optics

    Science.gov (United States)

    2013-04-30

    silicon microring resonators for label-free biosensing in undiluted human plasma,” Biosensors and Bioelectronics 42 (2013) A widely acknowledged...resonators as high sensitivity biosensors will be discussed. The results of the research including scientific publications and patents are...demonstrating mid-infrared integrated optics in silicon and pursuing new investigations into using silicon resonators as high sensitivity biosensors . A

  12. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  13. MITLL Silicon Integrated Photonics Process: Design Guide

    Science.gov (United States)

    2015-07-31

    MIT Lincoln Laboratory Silicon Integrated Photonics Process Design Guide Revision 2015:1a (31 July 2015) Comprehensive Design...Government. Rev.: 2015:1a (18 June 2015) i MITLL Silicon Integrated Photonics Process Comprehensive Design Guide ... Silicon Integrated Photonics Process Comprehensive Design Guide 16  Deep Etch for Fiber Coupling (DEEP_ETCH

  14. Silicon vertex detector for superheavy elements identification

    Directory of Open Access Journals (Sweden)

    Bednarek A.

    2012-07-01

    Full Text Available Silicon vertex detector for superheavy elements (SHE identification has been proposed. It will be constructed using very thin silicon detectors about 5 μm thickness. Results of test of 7.3 μm four inch silicon strip detector (SSD with fission fragments and α particles emitted by 252Cf source are presented

  15. Engineering piezoresistivity using biaxially strained silicon

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads

    2008-01-01

    of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity...

  16. ePIXfab - The silicon photonics platform

    NARCIS (Netherlands)

    Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-01-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

  17. 21 CFR 573.940 - Silicon dioxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Silicon dioxide. 573.940 Section 573.940 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in...

  18. Analysis of silicon transporters in turfgrass species

    Science.gov (United States)

    Silicon is an abundant element on earth and is also known to be beneficial as an amendment in some crops such as rice. Despite its abundance in many soils, accumulation of silicon in plants is species-specific and can be widely different. It has been shown that the genes responsible for silicon upta...

  19. 21 CFR 172.480 - Silicon dioxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Silicon dioxide. 172.480 Section 172.480 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.480 Silicon dioxide. The food additive silicon dioxide may be safely used in food in...

  20. PECVD silicon nitride diaphragms for condenser microphones

    NARCIS (Netherlands)

    Scheeper, P.R.; Scheeper, P.R.; Voorthuyzen, J.A.; Voorthuyzen, J.A.; Bergveld, Piet

    1991-01-01

    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile

  1. Aquaporins Mediate Silicon Transport in Humans.

    Science.gov (United States)

    Garneau, Alexandre P; Carpentier, Gabriel A; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J; Bélanger, Richard; Côté, François; Isenring, Paul

    2015-01-01

    In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

  2. 77 FR 20649 - Silicon Metal From China

    Science.gov (United States)

    2012-04-05

    ... COMMISSION Silicon Metal From China Determination On the basis of the record \\1\\ developed in the subject... order on silicon metal from China would be likely to lead to continuation or recurrence of material... Publication 4312 (March 2012), entitled Silicon Metal from China: Investigation No. 731-TA-472 (Third Review...

  3. Aquaporins Mediate Silicon Transport in Humans.

    Directory of Open Access Journals (Sweden)

    Alexandre P Garneau

    Full Text Available In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1, a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1 the kinetics of substrate transport, 2 their presence in tissues where silicon is presumed to play key roles and 3 their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

  4. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans

    2002-01-01

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  5. Silicon carbide as platform for energy applications

    DEFF Research Database (Denmark)

    Syväjärvi, Mikael; Jokubavicius, Valdas; Sun, Jianwu

    Silicon carbide is emerging as a novel material for a range of energy and environmental technologies. Previously, silicon carbide was considered as a material mainly for transistor applications. We have initiated the use of silicon carbide material towards optoelectronics in general lighting and ...

  6. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  7. Field Surveys, IOC Valleys. Volume III, Part I. Cultural Resources Survey, Dry Lake Valley, Nevada.

    Science.gov (United States)

    1981-08-01

    Delmues (or Swiss Bob) Well where there was a station, then west across Dry Lake Valley toward Coyote Spring to another station (Lloyd, 1980). The line...in the recorded surface assemblages of the temporary camps. Further investigations may $ Etag E-TR-48-III-I 120 clarify the specific nature of the

  8. Surface slip during large Owens Valley earthquakes

    KAUST Repository

    Haddon, E. K.

    2016-01-10

    The 1872 Owens Valley earthquake is the third largest known historical earthquake in California. Relatively sparse field data and a complex rupture trace, however, inhibited attempts to fully resolve the slip distribution and reconcile the total moment release. We present a new, comprehensive record of surface slip based on lidar and field investigation, documenting 162 new measurements of laterally and vertically displaced landforms for 1872 and prehistoric Owens Valley earthquakes. Our lidar analysis uses a newly developed analytical tool to measure fault slip based on cross-correlation of sublinear topographic features and to produce a uniquely shaped probability density function (PDF) for each measurement. Stacking PDFs along strike to form cumulative offset probability distribution plots (COPDs) highlights common values corresponding to single and multiple-event displacements. Lateral offsets for 1872 vary systematically from approximate to 1.0 to 6.0 m and average 3.31.1 m (2 sigma). Vertical offsets are predominantly east-down between approximate to 0.1 and 2.4 m, with a mean of 0.80.5 m. The average lateral-to-vertical ratio compiled at specific sites is approximate to 6:1. Summing displacements across subparallel, overlapping rupture traces implies a maximum of 7-11 m and net average of 4.41.5 m, corresponding to a geologic M-w approximate to 7.5 for the 1872 event. We attribute progressively higher-offset lateral COPD peaks at 7.12.0 m, 12.8 +/- 1.5 m, and 16.6 +/- 1.4 m to three earlier large surface ruptures. Evaluating cumulative displacements in context with previously dated landforms in Owens Valley suggests relatively modest rates of fault slip, averaging between approximate to 0.6 and 1.6 mm/yr (1 sigma) over the late Quaternary.

  9. Silicon nanocrystals and defect states in silicon rich silicon nitride for optoelectronic applications

    Science.gov (United States)

    Mohammed, Shakil

    Research interest in silicon nanocrystals (Si-NC) has increased significantly as a result of the desire to improve the light emission efficiency of bulk silicon. Si-NCs embedded in silicon nitride have desirable characteristics for optoelectronic applications since they can increase the tunneling probability and have a lower tunneling barrier than silicon oxide. Higher tunneling probability is an important feature as it can be used to develop more efficient electroluminescent and photovoltaic devices. In this dissertation, the Si-rich Si3N 4 (SRN) was prepared using low pressure chemical vapor deposition (LPCVD) and RF sputtering followed by high temperature treatment in order to precipitate Si-NCs within the silicon nitride matrix. Several different characterization techniques were used on the Si-NC samples in order to understand the physical, structural, optical and electrical behavior of the nanocrystals. Characterization techniques used in this analysis included photoluminescence (PL), time resolved PL, X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy, ellipsometry and capacitance-voltage (C-V) measurements. Silicon nitride was found to contain a high defect density which suppressed the PL effect from the Si-NC. The PL observed from each different SRN sample correlated to defect states, namely dangling bonds and oxygen related bonding. Although substantial evidence suggested that Si-NC had formed within the SRN sample, a PL effect due to the quantum confinement effect (QCE) from the nanocrystals could not be detected. However, Si rich SiOx samples exhibited excellent PL which correlated with the QCE for an indirect bandgap semiconductor. Further experiments were conducted using forming gas in order to passivate the defects in the SRN. Though significant changes in PL was not achieved due to passivation, the electrical behavior from the SRN indicated that the

  10. Volume of Valley Networks on Mars and Its Hydrologic Implications

    Science.gov (United States)

    Luo, W.; Cang, X.; Howard, A. D.; Heo, J.

    2015-12-01

    Valley networks on Mars are river-like features that offer the best evidence for water activities in its geologic past. Previous studies have extracted valley network lines automatically from digital elevation model (DEM) data and manually from remotely sensed images. The volume of material removed by valley networks is an important parameter that could help us infer the amount of water needed to carve the valleys. A progressive black top hat (PBTH) transformation algorithm has been adapted from image processing to extract valley volume and successfully applied to simulated landform and Ma'adim Valles, Mars. However, the volume of valley network excavation on Mars has not been estimated on a global scale. In this study, the PBTH method was applied to the whole Mars to estimate this important parameter. The process was automated with Python in ArcGIS. Polygons delineating the valley associated depressions were generated by using a multi-flow direction growth method, which started with selected high point seeds on a depth grid (essentially an inverted valley) created by PBTH transformation and grew outward following multi-flow direction on the depth grid. Two published versions of valley network lines were integrated to automatically select depression polygons that represent the valleys. Some crater depressions that are connected with valleys and thus selected in the previous step were removed by using information from a crater database. Because of large distortion associated with global dataset in projected maps, the volume of each cell within a valley was calculated using the depth of the cell multiplied by the spherical area of the cell. The volumes of all the valley cells were then summed to produce the estimate of global valley excavation volume. Our initial result of this estimate was ~2.4×1014 m3. Assuming a sediment density of 2900 kg/m3, a porosity of 0.35, and a sediment load of 1.5 kg/m3, the global volume of water needed to carve the valleys was

  11. Knickpoints and Hanging Valleys of Licus Vallis, Mars

    Science.gov (United States)

    Goudge, T. A.; Fassett, C.

    2016-12-01

    Licus Vallis is a 350 km long valley system located along the dichotomy boundary on Mars. The main trunk of the valley is incised 200-700 m into the surrounding terrain. The valley heads at an outlet breach of a shallow, 30 km diameter impact crater, and is also fed by a system of tributaries incised into the plateau surrounding Licus Vallis. Many of the tributary valleys, as well as the main stem of the valley fed by the paleolake outlet, have profiles that are not smoothly graded, but rather have distinct reaches with concave downward topography. These sections are either knickpoints or hanging valleys that develop in response to changes in the effective local base level, changes in climate conditions during incision of the valley, or lithologic boundaries in the substrate. Here we present remote sensing observations from images and topography to test these competing hypotheses and further characterize the evolution of this large valley system. Slope-watershed area relationships for the tributaries and main trunk valley are used to distinguish between knickpoints and hanging valleys. Analysis of orbital images does not reveal any distinct layer above which knickpoints develop, and the elevation of knickpoints show no systematic trends that might be expected of a regional lithologic unit(s). Our preliminary results suggest that the distance of knickpoint retreat is correlated with the position of the tributary valley and not the watershed area. Downstream valleys have retreated the most, suggesting they have had the most time to adjust to lowering of the local base level associated with incision of the main valley. These results are most consistent with a wave of incision sweeping up the valley system as it adjusts to a low base level in the northern plains. This conclusion is also consistent with observations of the incision depth of Licus Vallis, which increases approximately linearly downstream. Understanding this signature of base level control on the incision

  12. Historical Geography of the Upper Tombigbee Valley.

    Science.gov (United States)

    1982-05-01

    0-0117 005 AL4AA8A IIV IN BZFI~~N$A cmkf FOR TH4I STW ~V O5-C PlO 5/4045TORICAL W5APm or T~iq LP t’ viLLEY. tuM AY t an 0 Po ot C4714(76) iL d Au rI...Archeology Upper Tombigbee Valley Cultural Resources Tombigbee River Predictive Models * A Settlement Patterns Transportation Activities cont on n xt...Tombigbee River Multi- Resource District of the Tennessee-Tombigbee Waterway in Alabama and Mississippi. THE CENTER FOR THE STUDY OF SOUTHERN HISTORY

  13. Pleistocene glaciation in the Logar Valley

    Directory of Open Access Journals (Sweden)

    Borut Stojilković

    2013-12-01

    Full Text Available The article focuses on the glacial remains from the time of the last glacial maximum in the Logar Valley in the Kamnik-Savinja Alps. The purpose of the work is to reinterpret the findings written so far and the geomorphologic remains from the time of the Pleistocene glaciation and to prepare a new proposal of the circumference of the last glacial maximum in this area. The numerical analysis was based on the findings gained with field work. According to the findings, the maximum glacier extent was drawn and a three-dimensional reconstruction of the topography of the surface was created.

  14. Afforestation for improving valley urban air quality

    OpenAIRE

    Chu, Peter C.; Chen, Y.C.; Lu, S.H.

    2005-01-01

    Air Quality Management at Urban, Regional, and Global Scales, Third International Symposium on Air Quality Management Lanzhou is one of the major cities in northwest China and the capital of Gansu Province and located at a narrow (2-8 km width), long (40-km), NW-SE oriented valley basin (elevation: 1,500- 1,600-m) with the Tibetan plateau in the west, Baita mountain (above 1,700-m elevation) in the north, and the Gaolan mountain in the south. Due to topographic and meteorol...

  15. Neuroimaging Features of San Luis Valley Syndrome

    Directory of Open Access Journals (Sweden)

    Matthew T. Whitehead

    2015-01-01

    Full Text Available A 14-month-old Hispanic female with a history of double-outlet right ventricle and developmental delay in the setting of recombinant chromosome 8 syndrome was referred for neurologic imaging. Brain MR revealed multiple abnormalities primarily affecting midline structures, including commissural dysgenesis, vermian and brainstem hypoplasia/dysplasia, an interhypothalamic adhesion, and an epidermoid between the frontal lobes that enlarged over time. Spine MR demonstrated hypoplastic C1 and C2 posterior elements, scoliosis, and a borderline low conus medullaris position. Presented herein is the first illustration of neuroimaging findings from a patient with San Luis Valley syndrome.

  16. The uncanny valley in games and animation

    CERN Document Server

    Tinwell, Angela

    2014-01-01

    Advances in technology have enabled animators and video game designers to design increasingly realistic, human-like characters in animation and games. Although it was intended that this increased realism would allow viewers to appreciate the emotional state of characters, research has shown that audiences often have a negative reaction as the human likeness of a character increases. This phenomenon, known as the Uncanny Valley, has become a benchmark for measuring if a character is believably realistic and authentically human like. This book is an essential guide on how to overcome the Uncanny

  17. Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy.

    Science.gov (United States)

    Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M; Cushing, Scott K; Borja, Lauren J; Gandman, Andrey; Kaplan, Christopher J; Oh, Myoung Hwan; Prell, James S; Prendergast, David; Pemmaraju, Chaitanya D; Neumark, Daniel M; Leone, Stephen R

    2017-07-01

    Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si0.25Ge0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M4,5-edge (∼30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons across the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct [Formula: see text] and Si0.25Ge0.75 indirect gaps ([Formula: see text]) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si0.25Ge0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution.

  18. Silicon carbide fibers and articles including same

    Science.gov (United States)

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  19. Methods for producing silicon carbide fibers

    Science.gov (United States)

    Garnier, John E.; Griffith, George W.

    2016-03-01

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  20. Solar silicon via the Dow Corning process

    Science.gov (United States)

    Hunt, L. P.; Dosaj, V. D.

    1979-01-01

    Technical feasibility for high volume production of solar cell-grade silicon is investigated. The process consists of producing silicon from pure raw materials via the carbothermic reduction of quartz. This silicon was then purified to solar grade by impurity segregation during Czochralski crystal growth. Commercially available raw materials were used to produce 100 kg quantities of silicon during 60 hour periods in a direct arc reactor. This silicon produced single crystalline ingot, during a second Czochralski pull, that was fabricated into solar cells having efficiencies ranging from 8.2 percent to greater than 14 percent. An energy analysis of the entire process indicated a 5 month payback time.

  1. Intraventricular Silicone Oil: A Case Report.

    Science.gov (United States)

    Mathis, Stéphane; Boissonnot, Michèle; Tasu, Jean-Pierre; Simonet, Charles; Ciron, Jonathan; Neau, Jean-Philippe

    2016-01-01

    Intracranial silicone oil is a rare complication of intraocular endotamponade with silicone oil. We describe a case of intraventricular silicone oil fortuitously observed 38 months after an intraocular tamponade for a complicated retinal detachment in an 82 year-old woman admitted in the Department of Neurology for a stroke. We confirm the migration of silicone oil along the optic nerve. We discuss this rare entity with a review of the few other cases reported in the medical literature. Intraventricular migration of silicone oil after intraocular endotamponade is usually asymptomatic but have to be known of the neurologists and the radiologists because of its differential diagnosis that are intraventricular hemorrhage and tumor.

  2. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  3. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  4. Method For Producing Mechanically Flexible Silicon Substrate

    KAUST Repository

    Hussain, Muhammad Mustafa

    2014-08-28

    A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

  5. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  6. Aleph silicon microstrip vertex detector

    CERN Multimedia

    Laurent Guiraud

    1998-01-01

    This microstrip vertex locator was located at the heart of the ALEPH experiment, one of the four experiments at the Large Electron-Positron (LEP) collider. In the experiments at CERN's LEP, which ran from 1989 to 2000, modern silicon microvertex detectors, such as those used at ALEPH, monitored the production of short-lived particles close to the beam pipe.

  7. Magnetically retained silicone facial prosthesis

    African Journals Online (AJOL)

    straps, spectacle frames, extension from the denture, magnets, adhesives and implants material.[4] In this case report using maxillofacial silicone material and magnets, the prosthesis was constructed to camouflage the facial defect more esthetically. Case Report. A 67‑year‑old male patient was referred to the department.

  8. Magnetically retained silicone facial prosthesis

    African Journals Online (AJOL)

    Key words: Magnet retention, oro cutaneous fistula, silicone maxillofacial prosthesis. Date of Acceptance: 09-Jun-2013. Address for correspondence: Dr. Suresh Venugopalan, Department of Prosthodontics,. Saveetha Dental College, Ponamalle High Road,. Chennai ‑ 600 077, Tamil Nadu, India. E‑mail: ...

  9. Behavior of dislocations in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sumino, Koji [Nippon Steel Corp., Chiba Prefecture (Japan)

    1995-08-01

    A review is given of dynamic behavior of dislocations in silicon on the basis of works of the author`s group. Topics taken up are generation, motion and multiplication of dislocations as affected by oxygen impurities and immobilization of dislocations due to impurity reaction.

  10. Seedless electroplating on patterned silicon

    NARCIS (Netherlands)

    Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

    2006-01-01

    Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 μm thick have been deposited using a nickel sulfamate

  11. Silicon nitride microwave photonic circuits

    NARCIS (Netherlands)

    Roeloffzen, C.G.H.; Zhuang, L.; Taddei, Caterina; Taddei, Caterina; Leinse, Arne; Heideman, Rene; van Dijk, Paulus W.L.; Oldenbeuving, Ruud; Marpaung, D.A.I.; Burla, M.; Buria, Maurizio; Boller, Klaus J.

    2013-01-01

    We present an overview of several microwave photonic processing functionalities based on combinations of Mach-Zehnder and ring resonator filters using the high index contrast silicon nitride (TriPleXTM) waveguide technology. All functionalities are built using the same basic building blocks, namely

  12. Theory of unsaturated silicon lattices

    Science.gov (United States)

    Zhang, Feng; Stucke, David; Stojkovic, Dragan; Crespi, Vincent

    2008-03-01

    Several molecules are known to contain stable silicon double or triple bonds that are sterically protected by bulky side groups. Through first-principles computation, we demonstrate that well-defined π bonds can also be formed in two prototypical crystalline Si structures: Schwarzite Si-168 and dilated diamond. The sp^2-bonded Si-168 is thermodynamically preferred over diamond silicon at a modest negative pressure of -2.5 GPa. Ab-initio molecular dynamics simulations of Si-168 at 1000 K reveal significant thermal stability. Si-168 is metallic in density functional theory, but with distinct π-like and &*circ;-like valence and conduction band complexes just above and below the Fermi energy. A bandgap buried in the valence band but close to the Fermi level can be accessed via hole doping in semiconducting Si144B24. A less-stable crystalline system with a silicon-silicon triple bond is also examined: a rare-gas intercalated open framework on a dilated diamond lattice.

  13. Mesoporous Silicon-Based Anodes

    Science.gov (United States)

    Peramunage, Dharmasena

    2015-01-01

    For high-capacity, high-performance lithium-ion batteries. A new high-capacity anode composite based on mesoporous silicon is being developed. With a structure that resembles a pseudo one-dimensional phase, the active anode material will accommodate significant volume changes expected upon alloying and dealloying with lithium (Li).

  14. Let’s talk silicon

    Science.gov (United States)

    While silicon (Si) has been a known plant nutrient for centuries, how plants use this element is still poorly understood. Researchers have identified how plants acquire Si from the environment and transport the element to all plant tissues, including roots, stems, petioles, leaves and flowers. We ...

  15. Pathology of silicon carbide pneumoconiosis.

    Science.gov (United States)

    Massé, S; Bégin, R; Cantin, A

    1988-03-01

    Silicon carbide is a widely used synthetic abrasive manufactured by heating silica and coke in electric furnaces at 2400 degrees C. Until recently it had been considered a relatively inert dust in humans and animals. However, several roentgenologic surveys had revealed lesions similar to low-grade silicosis. A recent epidemiological study has revealed a 35% incidence of pulmonary problems. Tissues from three such workers were available for light microscopy. A mixed pneumoconiosis was found, and lesions can be summarized as follows: (a) abundance of intraalveolar macrophages associated with a mixture of inhaled particles including carbon, silicon, pleomorphic crystals, silicon carbide, and ferruginous bodies showing a thin black central core; (b) nodular fibrosis, generally profuse, containing silica and ferruginous bodies and associated with large amount of carbon pigment; (c) interstitial fibrosis, less prominent than the nodular form; (d) carcinoma in two cases. We believe this pneumoconiosis is sufficiently characteristic to be recognized as a distinct entity. The Stanton hypothesis on fiber properties and carcinogenesis could be applied to silicon carbide dust. At present, it appears that the occupational hazard is limited to the manufacturing process and powdered product used in some industries.

  16. Microelectromechanical pump utilizing porous silicon

    Science.gov (United States)

    Lantz, Jeffrey W [Albuquerque, NM; Stalford, Harold L [Norman, OK

    2011-07-19

    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  17. Untreated silicone breast implant rupture.

    Science.gov (United States)

    Hölmich, Lisbet R; Vejborg, Ilse M; Conrad, Carsten; Sletting, Susanne; Høier-Madsen, Mimi; Fryzek, Jon P; McLaughlin, Joseph K; Kjøller, Kim; Wiik, Allan; Friis, Søren

    2004-07-01

    Implant rupture is a well-known complication of breast implant surgery that can pass unnoticed by both patient and physician. To date, no prospective study has addressed the possible health implications of silicone breast implant rupture. The aim of the present study was to evaluate whether untreated ruptures are associated with changes over time in magnetic resonance imaging findings, serologic markers, or self-reported breast symptoms. A baseline magnetic resonance imaging examination was performed in 1999 on 271 women who were randomly chosen from a larger cohort of women having cosmetic breast implants for a median period of 12 years (range, 3 to 25 years). A follow-up magnetic resonance imaging examination was carried out in 2001, excluding women who underwent explantation in the period between the two magnetic resonance imaging examinations (n = 44). On the basis of these examinations, the authors identified 64 women who had at least one ruptured implant at the first magnetic resonance imaging examination and, for comparison, all women who had intact implants at both examinations (n = 98). Magnetic resonance images from the two examinations were compared and changes in rupture configuration were evaluated. Comparisons were also made for self-reported breast symptoms occurring during the study period and for changes in serum values of antinuclear antibodies, rheumatoid factor, and cardiolipin antibodies immunoglobulin G and immunoglobulin M. The majority of the women with implant rupture had no visible magnetic resonance imaging changes of their ruptured implants. For 11 implants (11 percent) in 10 women, the authors observed progression of silicone seepage, either as a conversion from intracapsular into extracapsular rupture (n = 7), as progression of extra-capsular silicone (n = 3), or as increasing herniation of the silicone within the fibrous capsule (n = 1); however, in most cases, these changes were minor. Some changes could be ascribed to trauma, but

  18. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  19. Aluminum gettering in single and multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    McHugo, S.A.; Hieslmair, H.; Weber, E.R. [Univ. of California, Berkeley, CA (United States)

    1995-08-01

    Al gettering has been performed on integrated circuit (I.C.) quality silicon and a variety of single and multicrystalline silicon solar cell materials. The minority carrier diffusion length, Ln, has been used to quantify the gettering response. Vast differences in response to the Al gettering treatment are observed between the I.C. quality silicon and the solar cell materials. The I.C. silicon generally responds well while the solar cell silicon performance progressively degrades with increasing gettering temperature. Preliminary data shows that by performing a Rapid Thermal Annealing treatment prior to the Al gettering, an improved or further degraded Ln emerges in solar cell material depending on the material`s manufacturer. We explain these observed phenomena by suggesting that Al gettering in solar cell silicon is an impurity emission-limited process while for I.C. quality silicon it is diffusion limited.

  20. Recent progress and patents in silicon nanotubes.

    Science.gov (United States)

    Pei, Li Z; Wang, Shang B; Fan, Chuan G

    2010-01-01

    Silicon nanotubes, as a novel kind of silicon nanomaterials, exhibit good application prospect in lithium ion battery, field effect transistors, magnetic nanodevices, hydrogen storage, nanoscale electron and field emitting devices. This article reviews the recent progress and patents in silicon nanotubes. The progress and corresponding patents for the synthesis of silicon nanotubes using different templates, hydrothermal method, electrochemical deposition, plasma method and laser ablation method are demonstrated. The experimental application and patents of silicon nanotubes as field effect transistors and lithium ion battery are discussed. The application potential of silicon nanotubes in magnetic devices, hydrogen storage, nanoscale electron and field-emitting devices is demonstrated. Finally, the future development of silicon nanotubes for the synthesis and practice application is also discussed.

  1. Oscillating Nocturnal Slope Flow in a Coastal Valley

    DEFF Research Database (Denmark)

    Gryning, Sven-Erik; Larsen, Søren Ejling; Mahrt, Larry

    1985-01-01

    over the sloping valley floor was studied during a special observing campaign. A downslope gravity flow interacts with even colder surface air at the valley floor. The latter originates as cold marine air or previous drainage of cold air. Regular oscillations which appear to be trapped, terrain...

  2. 27 CFR 9.208 - Snake River Valley.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Snake River Valley. 9.208... Snake River Valley. (a) Name. The name of the viticultural area described in this section is “Snake River Valley”. For purposes of part 4 of this chapter, “Snake River Valley” is a term of viticultural...

  3. Rift Valley Fever Outbreak in Livestock, Mozambique, 2014

    Science.gov (United States)

    Coetzee, Peter; Mubemba, Benjamin; Nhambirre, Ofélia; Neves, Luis; Coetzer, J.A.W.; Venter, Estelle H.

    2016-01-01

    In early 2014, abortions and death of ruminants were reported on farms in Maputo and Gaza Provinces, Mozambique. Serologic analysis and quantitative and conventional reverse transcription PCR confirmed the presence of Rift Valley fever virus. The viruses belonged to lineage C, which is prevalent among Rift Valley fever viruses in southern Africa. PMID:27869589

  4. Some Environmental Issues of Inland Valleys: A Case Study | Asiam ...

    African Journals Online (AJOL)

    The study concluded that inland valleys can be real environmental liability because produce from such valleys can be polluted and hence can be a source of social conflict particularly when they fringe mineral concessions as the adverse impacts could be unfortunately attributed to mining activity and similar land uses.

  5. Characterization of inland-valleys for smallholder dairy production in ...

    African Journals Online (AJOL)

    A two-level (village or town, household level) characterization of inland-valley areas was undertaken in order to assess the potentials and constraints associated with inland-valleys agriculture production in a croplivestock system in 3 west african countries (Côte d'Ivoire, Mali and Nigeria). User groups and opinion leaders in ...

  6. Groundwater recharge on east side soils of the Salinas Valley

    Science.gov (United States)

    After four years of drought, groundwater levels in the Salinas Valley are at historically low levels which threaten to adversely affect farming in the Salinas Valley. Given the prospect of a strong El Niño this coming winter, it seems prudent to plan to capture as much of the rainfall as possible to...

  7. Valley Fever: Danger Lurking in a Dust Cloud

    Science.gov (United States)

    Johnson, Larry; Gaab, Erin M.; Sanchez, Javier; Bui, Phuong Q.; Nobile, Clarissa J.; Hoyer, Katrina K.; Peterson, Michael W.; Ojcius, David M.

    2014-01-01

    Coccidioides immitis and Coccidioides posadasii contribute to the development of Valley Fever. The ability of these fungal pathogens to evade the host immune system creates difficulty in recognition and treatment of this debilitating infection. In this review, we describe the current knowledge of Valley Fever and approaches to improve prevention, detection, and treatment. PMID:25038397

  8. Cache valley virus in a patient diagnosed with aseptic meningitis.

    Science.gov (United States)

    Nguyen, Nang L; Zhao, Guoyan; Hull, Rene; Shelly, Mark A; Wong, Susan J; Wu, Guang; St George, Kirsten; Wang, David; Menegus, Marilyn A

    2013-06-01

    Cache Valley virus was initially isolated from mosquitoes and had been linked to central nervous system-associated diseases. A case of Cache Valley virus infection is described. The virus was cultured from a patient's cerebrospinal fluid and identified with real-time reverse transcription-PCR and sequencing, which also yielded the complete viral coding sequences.

  9. 36 CFR 7.26 - Death Valley National Monument.

    Science.gov (United States)

    2010-07-01

    ... Monument. 7.26 Section 7.26 Parks, Forests, and Public Property NATIONAL PARK SERVICE, DEPARTMENT OF THE INTERIOR SPECIAL REGULATIONS, AREAS OF THE NATIONAL PARK SYSTEM § 7.26 Death Valley National Monument. (a) Mining. Mining in Death Valley National Monument is subject to the following regulations, which are...

  10. A plateau-valley separation method for multifunctional surfaces characterization

    DEFF Research Database (Denmark)

    Godi, Alessandro; Kühle, A.; De Chiffre, Leonardo

    2012-01-01

    method based on the separation between the plateau and valley regions has been developed. After properly determining a threshold between plateaus and valleys, the two regions are divided in two distinct profiles, which can be studied separately according to the specific function....

  11. Hoopa Valley Small Scale Hydroelectric Feasibility Project

    Energy Technology Data Exchange (ETDEWEB)

    Curtis Miller

    2009-03-22

    This study considered assessing the feasibility of developing small scale hydro-electric power from seven major tributaries within the Hoopa Valley Indian Reservation of Northern California (http://www.hoopa-nsn.gov/). This study pursued the assessment of seven major tributaries of the Reservation that flow into the Trinity River. The feasibility of hydropower on the Hoopa Valley Indian Reservation has real potential for development and many alternative options for project locations, designs, operations and financing. In order to realize this opportunity further will require at least 2-3 years of intense data collection focusing on stream flow measurements at multiple locations in order to quantify real power potential. This also includes on the ground stream gradient surveys, road access planning and grid connectivity to PG&E for sale of electricity. Imperative to this effort is the need for negotiations between the Hoopa Tribal Council and PG&E to take place in order to finalize the power rate the Tribe will receive through any wholesale agreement that utilizes the alternative energy generated on the Reservation.

  12. Salts in the dry valleys of Antartica

    Science.gov (United States)

    Gibson, E. K., Jr.; Presley, B. J.; Hatfield, J.

    1984-01-01

    The Dry Valleys of Antarctica are examples of polar deserts which are rare geological features on the Earth. Such deserts typically have high salinities associated with their closed-basin waters and on many surficial materials throughout them. In order to examine the possible sources for the salts observed in association with the soils in the Dry Valleys. The chloride and bromide concentrations of the water leachates from 58 soils and core samples were measured. The Cl/Br ratio for seawater is 289 and ratios measured for most of the 58 soils studied (greater than 85% of the soils studied) was larger than the seawater ratio (ratios typically were greater than 1000 and ranged up to 50,000). The enrichment in Cl relative to Br is strong evidence that the alts present within the soils were derived from seawater during ordinary evaporation processes, and not from the deposition of Cl and Br from aerosols or from rock weathering as has often been suggested.

  13. Geddes, Zoos and the Valley Section

    Directory of Open Access Journals (Sweden)

    Catherine Thompson

    2004-12-01

    Full Text Available The development of Edinburgh Zoological Garden was a pioneering example of the modern approach to animal display, placing animals in naturalistic settings that demanded innovative landscape design. The concept for Edinburgh Zoo, opened in 1913, was devised by Patrick Geddes and developed in collaboration with Frank C Mears and Geddes's daughter, Norah. This paper draws on Welter's (2002 important study of Geddes's vision of the city and on Geddes biographies, as well as on original archive material, to explore aspects of Geddes's vision for landscape architecture in the early twentieth century. The paper discusses Geddes's contribution to contemporary design and planning theory through the concept of the valley section, which comes to an understanding of the global through the local and in turn inspires a vision of the universal. Geddes was influenced by Hagenbeck's design for his zoo, near Hamburg, and by the New York Zoological Park, in developing displays for Edinburgh zoo that attempted to show animal behaviour as it would be in its natural habitat. The work of the German evolutionary biologist, Ernst Haeckel, further inspired Geddes to conceptualise the design as one where, just as ontogeny recapitulates phylogeny, so human civilisation might be recapitulated. He developed a three-dimensional expression of his hypothetical 'valley section' as a model for interaction between life and the environment. The zoo 'within' a city becomes a model for the ideal city, a city 'within' its region, reflecting the highest attainment of human development, yet still linked to the most primitive of origins.

  14. Silicon-Based Anode and Method for Manufacturing the Same

    Science.gov (United States)

    Yushin, Gleb Nikolayevich (Inventor); Luzinov, Igor (Inventor); Zdyrko, Bogdan (Inventor); Magasinski, Alexandre (Inventor)

    2017-01-01

    A silicon-based anode comprising silicon, a carbon coating that coats the surface of the silicon, a polyvinyl acid that binds to at least a portion of the silicon, and vinylene carbonate that seals the interface between the silicon and the polyvinyl acid. Because of its properties, polyvinyl acid binders offer improved anode stability, tunable properties, and many other attractive attributes for silicon-based anodes, which enable the anode to withstand silicon cycles of expansion and contraction during charging and discharging.

  15. National solar technology roadmap: Film-silicon PV

    Energy Technology Data Exchange (ETDEWEB)

    Keyes, Brian [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2007-06-01

    Silicon photovoltaic (PV) technologies are addressed in two different technology roadmaps: Film-Silicon PV and Wafer-Silicon PV. This Film-Silicon PV roadmap applies to all silicon-film technologies that rely on a supporting substrate such as glass, polymer, aluminum, stainless steel, or metallurgical-grade silicon. Such devices typically use amorphous, nanocrystalline, fine-grained polycrystalline, or epitaxial silicon layers that are 1–20 μm thick.

  16. Geology and water resources of Owens Valley, California

    Science.gov (United States)

    Hollett, Kenneth J.; Danskin, Wesley R.; McCaffrey, William F.; Walti, Caryl L.

    1991-01-01

    Owens Valley, a long, narrow valley located along the east flank of the Sierra Nevada in east-central California, is the main source of water for the city of Los Angeles. The city diverts most of the surface water in the valley into the Owens River-Los Angeles Aqueduct system, which transports the water more than 200 miles south to areas of distribution and use. Additionally, ground water is pumped or flows from wells to supplement the surface-water diversions to the river-aqueduct system. Pumpage from wells needed to supplement water export has increased since 1970, when a second aqueduct was put into service, and local concerns have been expressed that the increased pumpage may have had a detrimental effect on the environment and the indigenous alkaline scrub and meadow plant communities in the valley. The scrub and meadow communities depend on soil moisture derived from precipitation and the unconfined part of a multilayered aquifer system. This report, which describes the hydrogeology of the aquifer system and the water resources of the valley, is one in a series designed to (1) evaluate the effects that groundwater pumping has on scrub and meadow communities and (2) appraise alternative strategies to mitigate any adverse effects caused by, pumping. Two principal topographic features are the surface expression of the geologic framework--the high, prominent mountains on the east and west sides of the valley and the long, narrow intermountain valley floor. The mountains are composed of sedimentary, granitic, and metamorphic rocks, mantled in part by volcanic rocks as well as by glacial, talus, and fluvial deposits. The valley floor is underlain by valley fill that consists of unconsolidated to moderately consolidated alluvial fan, transition-zone, glacial and talus, and fluvial and lacustrine deposits. The valley fill also includes interlayered recent volcanic flows and pyroclastic rocks. The bedrock surface beneath the valley fill is a narrow, steep-sided graben

  17. Four newly recorded species of Dryopteridaceae from Kashmir valley, India

    Directory of Open Access Journals (Sweden)

    SHAKOOR AHMAD MIR

    2014-04-01

    Full Text Available Mir SA, Mishra AK, Reshi ZA, Sharma MP. 2014. Four newly recorded species of Dryopteridaceae from Kashmir valley, India. Biodiversitas 15: 6-11. Habitat diversity, elevation, cloud cover, rainfall, seasonal and temperature variations have created many ideal sites for the luxuriant growth of pteridophytes in the Kashmir valley, yet all the regions of the valley have not been surveyed. In Kashmir valley the family Dryopteridaceae is represented by 31 species. During the recent extensive field surveys of Shopian district four more species viz., Dryopteris caroli-hopei Fraser-Jenkins, Dryopteris blanfordii subsp. nigrosquamosa (Ching Fraser-Jenkins, Dryopteris pulvinulifera (Bedd. Kuntze and Polystichum Nepalense (Spreng C. Chr. have been recorded for the first time from the valley. The taxonomic description, synonyms, distribution and photographs of each species are given in this article.

  18. Detection of valley polarization in graphene by a superconducting contact.

    Science.gov (United States)

    Akhmerov, A R; Beenakker, C W J

    2007-04-13

    Because the valleys in the band structure of graphene are related by time-reversal symmetry, electrons from one valley are reflected as holes from the other valley at the junction with a superconductor. We show how this Andreev reflection can be used to detect the valley polarization of edge states produced by a magnetic field. In the absence of intervalley relaxation, the conductance GNS=(2e2/h)(1-cosTheta) of the junction on the lowest quantum Hall plateau is entirely determined by the angle Theta between the valley isospins of the edge states approaching and leaving the superconductor. If the superconductor covers a single edge, Theta=0 and no current can enter the superconductor. A measurement of GNS then determines the intervalley relaxation time.

  19. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  20. Fracture controls on valley persistence: the Cairngorm Granite pluton, Scotland

    Science.gov (United States)

    Hall, A. M.; Gillespie, M. R.

    2017-09-01

    Valleys are remarkably persistent features in many different tectonic settings, but the reasons for this persistence are rarely explored. Here, we examine the structural controls on valleys in the Cairngorms Mountains, Scotland, part of the passive margin of the eastern North Atlantic. We consider valleys at three scales: straths, glens and headwater valleys. The structural controls on valleys in and around the Cairngorm Granite pluton were examined on satellite and aerial photographs and by field survey. Topographic lineaments, including valleys, show no consistent orientation with joint sets or with sheets of microgranite and pegmatitic granite. In this granite landscape, jointing is not a first-order control on valley development. Instead, glens and headwater valleys align closely to quartz veins and linear alteration zones (LAZs). LAZs are zones of weakness in the granite pluton in which late-stage hydrothermal alteration and hydro-fracturing have greatly reduced rock mass strength and increased permeability. LAZs, which can be kilometres long and >700 m deep, are the dominant controls on the orientation of valleys in the Cairngorms. LAZs formed in the roof zone of the granite intrusion. Although the Cairngorm pluton was unroofed soon after emplacement, the presence of Old Red Sandstone (ORS) outliers in the terrain to the north and east indicates that the lower relief of the sub-ORS basement surface has been lowered by 1 km of vertical erosion and for 400 Myr. This valley persistence is a combined product of regionally low rates of basement exhumation and of the existence of LAZs in the Cairngorm pluton and sub-parallel Caledonide fractures in the surrounding terrain with depths that exceed 1 km.

  1. Debug automation from pre-silicon to post-silicon

    CERN Document Server

    Dehbashi, Mehdi

    2015-01-01

    This book describes automated debugging approaches for the bugs and the faults which appear in different abstraction levels of a hardware system. The authors employ a transaction-based debug approach to systems at the transaction-level, asserting the correct relation of transactions. The automated debug approach for design bugs finds the potential fault candidates at RTL and gate-level of a circuit. Debug techniques for logic bugs and synchronization bugs are demonstrated, enabling readers to localize the most difficult bugs. Debug automation for electrical faults (delay faults)finds the potentially failing speedpaths in a circuit at gate-level. The various debug approaches described achieve high diagnosis accuracy and reduce the debugging time, shortening the IC development cycle and increasing the productivity of designers. Describes a unified framework for debug automation used at both pre-silicon and post-silicon stages; Provides approaches for debug automation of a hardware system at different levels of ...

  2. Reactive magnetron sputtering of silicon to produce silicon oxide

    Science.gov (United States)

    Howson, R. P.; Danson, N.; Hall, G. W.

    1997-01-01

    Well controlled silicon dioxide films with refractive index 1.400-1.490 have been deposited at rates of up to 0.85 nm/s from a 100 mm diameter polycrystalline silicon cathode, sputtered at 200 W of 40 kHz rectified AC power in a reactive environment. This frequency used with control of the partial pressure of the oxygen in the system from the cathode potential has demonstrated an ability to reactively sputter silicon oxide of high quality. Stress/stoichiometry curves showed a peak in stress at a refractive index of 1.460 indicating both a dense structure and optimised SiO 2. We have demonstrated a pulsing system for the admission of oxygen into the silicon sputtering system which is under the control of a signal derived from the voltage appearing on the cathode when sputtering at constant power. Such a signal indicates the sputtering status of the target as to the degree to which the cathode is covered with oxide i.e. poisoned. By varying combinations of reactive gas flow rate and switching levels, different film compositions could be reproducibly and reliably obtained. The growing films could be subjected to a externally-varied degree of argon-ion bombardment with a simple modification of the geometry of the unbalanced magnetron used for the sputtering. The amount of ion bombardment with such a system was also a function of the argon sputtering pressure that was used. Increased argon-ion bombardment resulted in more compressive stress in the film that was produced.

  3. A general classification of silicon utilizing organisms

    Science.gov (United States)

    Das, P.; Das, S.

    2010-12-01

    Silicon utilizing organisms may be defined as organisms with high silicon content (≥ 1% dry weight) and they can metabolize silicon with or without demonstrable silicon transporter genes (SIT) in them(Das,2010). Silicon is the second most abundant element in the lithosphere (27.70%) and it is as important as phosphorus and magnesium (0.03%) in the biota. Hydrated silica represents the second most abundant biogenic mineral after carbonate minerals. Silicon is accumulated and metabolized by some prokaryotes, and Si compounds can stimulate the growth of a range of fungi. It is well known that Si is essential for diatoms. In mammals, Si is considered an essential trace element, required in bone, cartilage and connective tissue formation, enzymatic activities and other metabolic processes. Silicon was suggested to act as a phosphoprotein effector in bone. In mammals, Si is also reported to positively influence the immune system and to be required for lymphocyte proliferation. The aqueous chemistry of Si is dominated by silicic acid at biological pH ranges. Monosilicic acid can form stable complexes with organic hydroxy-containing molecules . Biosilica also has been identified associated with various biomolecules including proteins and carbohydrates. There are main seven groups of silicon utilizing organisms belonging to Gram positive bacteria, algae, protozoa, sponges, fungi, lichens, and monocotyledon plants. In each group again all the members are not silicon utilizing organisms, thus selective members in each group are further classified depending their degree of silicon utilization. Important silicon utilizing bacteria are Mycobacteria, Nocardia, Streptomyces, Staphylococcus, Bacillus, Lactobacillus spp. etc., Important silicon utilizing algae are Centrobacillariophyceae, Pennatibacillariophyceae and Chrysophyceae. Many protozoa belonging to Heterokonta, Choanoflagellida, Actinopoda are well known silicon utilizing microorganisms. Hexactinellida ( glass sponges

  4. Water resources of Parowan Valley, Iron County, Utah

    Science.gov (United States)

    Marston, Thomas M.

    2017-08-29

    Parowan Valley, in Iron County, Utah, covers about 160 square miles west of the Red Cliffs and includes the towns of Parowan, Paragonah, and Summit. The valley is a structural depression formed by northwest-trending faults and is, essentially, a closed surface-water basin although a small part of the valley at the southwestern end drains into the adjacent Cedar Valley. Groundwater occurs in and has been developed mainly from the unconsolidated basin-fill aquifer. Long-term downward trends in groundwater levels have been documented by the U.S. Geological Survey (USGS) since the mid-1950s. The water resources of Parowan Valley were assessed during 2012 to 2014 with an emphasis on refining the understanding of the groundwater and surface-water systems and updating the groundwater budget.Surface-water discharge of five perennial mountain streams that enter Parowan Valley was measured from 2013 to 2014. The total annual surface-water discharge of the five streams during 2013 to 2014 was about 18,000 acre-feet (acre-ft) compared to the average annual streamflow of about 22,000 acre-ft from USGS streamgages operated on the three largest of these streams from the 1940s to the 1980s. The largest stream, Parowan Creek, contributes more than 50 percent of the annual surface-water discharge to the valley, with smaller amounts contributed by Red, Summit, Little, and Cottonwood Creeks.Average annual recharge to the Parowan Valley groundwater system was estimated to be about 25,000 acre-ft from 1994 to 2013. Nearly all recharge occurs as direct infiltration of snowmelt and rainfall on the Markagunt Plateau east of the valley. Smaller amounts of recharge occur as infiltration of streamflow and unconsumed irrigation water near the east side of the valley on alluvial fans associated with mountain streams at the foot of the Red Cliffs. Subsurface flow from the mountain block to the east of the valley is a significant source of groundwater recharge to the basin-fill aquifer

  5. Choosing a Silicone Encapsulant for Photovoltaic Applications

    Science.gov (United States)

    Velderrain, Michelle

    2011-12-01

    Growth in the solar industry has resulted in newer technologies, specifically concentrator photovoltaic (CPV) modules, to explore using new types of materials such as silicone encapsulants. CPV and LCPV module designs are to achieve the most efficient energy conversion possible however it is equally important to demonstrate long term reliability. Silicone is a material of interest due to its thermal stability and ability to absorb stresses incurred during thermal cycling. The refractive index of clear silicone adhesives is advantageous because it can be optimized using phenyl groups to match BK7 glass and other substrates to minimize light loss at the interfaces but it is relatively unknown how the optical properties change over time possibly yellowing in such a harsh environment. A 1.41 silicone encapsulant is compared to a 1.52 refractive index silicone. Optical Absorption (300 nm-1300 nm), Water Vapor Permeability, Moisture Absorption and effects of oxidation at elevated temperatures will be compared of these materials to aid the engineer in choosing a silicone for their CPV application. Non-phenyl containing 1.41 RI silicones have been used for several years for bonding solar arrays in the satellite industry. Phenyl groups on the siloxane polymer can change various properties of the silicone. Understanding how phenyl affects these properties allows the engineer to understand the benefits and risks when using a RI matching silicone to minimize light loss versus a non-phenyl containing silicone.

  6. Creep analysis of silicone for podiatry applications.

    Science.gov (United States)

    Janeiro-Arocas, Julia; Tarrío-Saavedra, Javier; López-Beceiro, Jorge; Naya, Salvador; López-Canosa, Adrián; Heredia-García, Nicolás; Artiaga, Ramón

    2016-10-01

    This work shows an effective methodology to characterize the creep-recovery behavior of silicones before their application in podiatry. The aim is to characterize, model and compare the creep-recovery properties of different types of silicone used in podiatry orthotics. Creep-recovery phenomena of silicones used in podiatry orthotics is characterized by dynamic mechanical analysis (DMA). Silicones provided by Herbitas are compared by observing their viscoelastic properties by Functional Data Analysis (FDA) and nonlinear regression. The relationship between strain and time is modeled by fixed and mixed effects nonlinear regression to compare easily and intuitively podiatry silicones. Functional ANOVA and Kohlrausch-Willians-Watts (KWW) model with fixed and mixed effects allows us to compare different silicones observing the values of fitting parameters and their physical meaning. The differences between silicones are related to the variations of breadth of creep-recovery time distribution and instantaneous deformation-permanent strain. Nevertheless, the mean creep-relaxation time is the same for all the studied silicones. Silicones used in palliative orthoses have higher instantaneous deformation-permanent strain and narrower creep-recovery distribution. The proposed methodology based on DMA, FDA and nonlinear regression is an useful tool to characterize and choose the proper silicone for each podiatry application according to their viscoelastic properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

  7. Dry etch method for texturing silicon and device

    Science.gov (United States)

    Gershon, Talia S.; Haight, Richard A.; Kim, Jeehwan; Lee, Yun Seog

    2017-07-25

    A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

  8. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  9. Spectroscopy of single silicon nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Martin, J.; Cichos, F.; Borczyskowski, C. von E-mail: borczyskowski@physik.tu-chemnitz.de

    2004-06-01

    Confocal microscopy has been performed on silicon nanoparticles prepared by gas-phase methods and electrochemical etching (single particles), respectively. Spectral line narrowing has been obtained for single particles. Spectra are in agreement with interstellar extended red emission (ERE) when properly choosing size distributions. Independent of preparation techniques, both types show similar behaviour with respect to (partly reversible in the dark) photobleaching accompanied by spectral red shifts on timescales of seconds upon 514 nm laser irradiation.

  10. Coating of silicon pore optics

    DEFF Research Database (Denmark)

    Cooper-Jensen, Carsten P.; Ackermann, M.; Christensen, Finn Erland

    2009-01-01

    For the International X-ray observatory (IXO), a mirror module with an effective area of 3 m2 at 1.25 keV and at least 0.65 m2 at 6 keV has to be realized. To achieve this goal, coated silicon pore optics has been developed over the last years. One of the challenges is to coat the Si plates...

  11. The ATLAS Silicon Pixel Sensors

    CERN Document Server

    Alam, M S; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Andreazza, A; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Musico, P; Osculati, B; Parodi, F; Rossi, L; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Aleppo, M; Caccia, M; Ragusa, F; Troncon, C; Lutz, Gerhard; Richter, R H; Rohe, T; Brandl, A; Gorfine, G; Hoeferkamp, M; Seidel, SC; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; D'Auria, S; del Papa, C; Charles, E; Fasching, D; Becks, K H; Lenzen, G; Linder, C

    2001-01-01

    Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired.

  12. Silicon nanocrystals as handy biomarkers

    Science.gov (United States)

    Fujioka, Kouki; Hoshino, Akiyoshi; Manabe, Noriyoshi; Futamura, Yasuhiro; Tilley, Richard; Yamamoto, Kenji

    2007-02-01

    Quantum dots (QDs) have brighter and longer fluorescence than organic dyes. Therefore, QDs can be applied to biotechnology, and have capability to be applied to medical technology. Currently, among the several types of QDs, CdSe with a ZnS shell is one of the most popular QDs to be used in biological experiments. However, when the CdSe QDs were applied to clinical technology, potential toxicological problems due to CdSe core should be considered. To eliminate the problem, silicon nanocrystals, which have the potential of biocompatibility, could be a candidate of alternate probes. Silicon nanocrystals have been synthesized using several techniques such as aerosol, electrochemical etching, laser pyrolysis, plasma deposition, and colloids. Recently, the silicon nanocrystals were reported to be synthesized in inverse micelles and also stabilized with 1-heptene or allylamine capping. Blue fluorescence of the nanocrystals was observed when excited with a UV light. The nanocrystals covered with 1-heptene are hydrophobic, whereas the ones covered with allylamine are hydrophilic. To test the stability in cytosol, the water-soluble nanocrystals covered with allylamine were examined with a Hela cell incorporation experiment. Bright blue fluorescence of the nanocrystals was detected in the cytosol when excited with a UV light, implying that the nanocrystals were able to be applied to biological imaging. In order to expand the application range, we synthesized and compared a series of silicon nanocrystals, which have variable surface modification, such as alkyl group, alcohol group, and odorant molecules. This study will provide a wider range of optoelectronic applications and bioimaging technology.

  13. An epidemiological model of Rift Valley fever

    Directory of Open Access Journals (Sweden)

    Nicole P. Leahy

    2007-08-01

    Full Text Available We present and explore a novel mathematical model of the epidemiology of Rift Valley Fever (RVF. RVF is an Old World, mosquito-borne disease affecting both livestock and humans. The model is an ordinary differential equation model for two populations of mosquito species, those that can transmit vertically and those that cannot, and for one livestock population. We analyze the model to find the stability of the disease-free equlibrium and test which model parameters affect this stability most significantly. This model is the basis for future research into the predication of future outbreaks in the Old World and the assessment of the threat of introduction into the New World.

  14. Rift Valley Fever, Sudan, 2007 and 2010

    Science.gov (United States)

    Aradaib, Imadeldin E.; Erickson, Bobbie R.; Elageb, Rehab M.; Khristova, Marina L.; Carroll, Serena A.; Elkhidir, Isam M.; Karsany, Mubarak E.; Karrar, AbdelRahim E.; Elbashir, Mustafa I.

    2013-01-01

    To elucidate whether Rift Valley fever virus (RVFV) diversity in Sudan resulted from multiple introductions or from acquired changes over time from 1 introduction event, we generated complete genome sequences from RVFV strains detected during the 2007 and 2010 outbreaks. Phylogenetic analyses of small, medium, and large RNA segment sequences indicated several genetic RVFV variants were circulating in Sudan, which all grouped into Kenya-1 or Kenya-2 sublineages from the 2006–2008 eastern Africa epizootic. Bayesian analysis of sequence differences estimated that diversity among the 2007 and 2010 Sudan RVFV variants shared a most recent common ancestor circa 1996. The data suggest multiple introductions of RVFV into Sudan as part of sweeping epizootics from eastern Africa. The sequences indicate recent movement of RVFV and support the need for surveillance to recognize when and where RVFV circulates between epidemics, which can make data from prediction tools easier to interpret and preventive measures easier to direct toward high-risk areas. PMID:23347790

  15. Purity of silicon: with great effect on its performance in graphite-silicon anode materials for lithium-ion batteries

    Science.gov (United States)

    Jin, Chenxin; Xu, Guojun; Liu, Liekai; Yue, Zhihao; Li, Xiaomin; Sun, Fugen; Tang, Hao; Huang, Haibin; Zhou, Lang

    2017-09-01

    Ferrosilicon, industrial grade silicon, solar grade silicon, and electronic grade silicon were ball-milled to form four types of silicon powders, which were mixed with graphite powders at weight ratio of 5:95, respectively, for being used as graphite-silicon anode materials in lithium-ion batteries (LIBs). The effect of the purity of silicon on its electrochemical performance in graphite-silicon anode materials for LIBs was investigated by the cycle and rate tests. Results show that silicon with higher purity shows higher capacity, better cycle, and rate performance. In addition, the significant difference in capacity of the four graphite-silicon anodes with different purities of silicon is not completely resulted from the content of silicon materials, and the influence of the impurity inside the silicon cannot be ignored as well. The sample prepared from electronic grade silicon presents the highest first discharge capacity, which is 440.5 mAh g-1.

  16. Direct measurement of exciton valley coherence in monolayer WSe2

    KAUST Repository

    Hao, Kai

    2016-02-29

    In crystals, energy band extrema in momentum space can be identified by a valley index. The internal quantum degree of freedom associated with valley pseudospin indices can act as a useful information carrier, analogous to electronic charge or spin. Interest in valleytronics has been revived in recent years following the discovery of atomically thin materials such as graphene and transition metal dichalcogenides. However, the valley coherence time—a crucial quantity for valley pseudospin manipulation—is difficult to directly probe. In this work, we use two-dimensional coherent spectroscopy to resonantly generate and detect valley coherence of excitons (Coulomb-bound electron–hole pairs) in monolayer WSe2 (refs ,). The imposed valley coherence persists for approximately one hundred femtoseconds. We propose that the electron–hole exchange interaction provides an important decoherence mechanism in addition to exciton population recombination. This work provides critical insight into the requirements and strategies for optical manipulation of the valley pseudospin for future valleytronics applications.

  17. Origin and evolution of valleys on Martian volcanoes

    Energy Technology Data Exchange (ETDEWEB)

    Gulick, V.C.; Baker, V.R. (Univ. of Arizona, Tucson (USA))

    1990-08-30

    Morphological analyses of six Martian volcanoes, Ceraunius Tholus, Hecates Tholus, Alba Patera, Hadriaca Patera, Apollinaris Patera, and Tyrrhena Patera, indicate that fluvial processes were the dominant influence in the initiation and subsequent development of many dissecting valleys. Lava processes and possibly volcanic density flows were also important as valley-forming processes. Fluvial valleys are especially well developed on Alba Patera, Ceraunius Tholus, and Hecates Tholus. These valleys are inset into the surrounding landscape. They formed in regions of subdued lava flow morphology, contain tributaries, and tend to widen slightly in the downstream direction. Lava channels on Alba Patera are located on the crest of lava flows and have a discontinuous, irregular surface morphology, and distributary patterns. These channels sometimes narrow toward their termini. Possible volcanic density flow channels are located on the northern flank of Ceraunius Tholus. Valleys dissecting Apollinaris Patera, Hadriaca Patera, and Tyrrhena Patera appear to have a complex evolution, probably a mixed fluvial and lava origin. They are inset into a subdued (possibly mantled) surface, lack tributaries, and either have fairly constant widths or widen slightly downvalley. Valleys surrounding the caldera of Apollinaris appear to have formed by fluvial and possibly by volcanic density flow processes, while those on the Apollinaris fan structure may have a mixed lava and fluvial origin. Valleys on Tyrrhena have broad flat floors and theater heads, which have been extensively enlarged, probably by sapping.

  18. Topological valley transport at bilayer graphene domain walls.

    Science.gov (United States)

    Ju, Long; Shi, Zhiwen; Nair, Nityan; Lv, Yinchuan; Jin, Chenhao; Velasco, Jairo; Ojeda-Aristizabal, Claudia; Bechtel, Hans A; Martin, Michael C; Zettl, Alex; Analytis, James; Wang, Feng

    2015-04-30

    Electron valley, a degree of freedom that is analogous to spin, can lead to novel topological phases in bilayer graphene. A tunable bandgap can be induced in bilayer graphene by an external electric field, and such gapped bilayer graphene is predicted to be a topological insulating phase protected by no-valley mixing symmetry, featuring quantum valley Hall effects and chiral edge states. Observation of such chiral edge states, however, is challenging because inter-valley scattering is induced by atomic-scale defects at real bilayer graphene edges. Recent theoretical work has shown that domain walls between AB- and BA-stacked bilayer graphene can support protected chiral edge states of quantum valley Hall insulators. Here we report an experimental observation of ballistic (that is, with no scattering of electrons) conducting channels at bilayer graphene domain walls. We employ near-field infrared nanometre-scale microscopy (nanoscopy) to image in situ bilayer graphene layer-stacking domain walls on device substrates, and we fabricate dual-gated field effect transistors based on the domain walls. Unlike single-domain bilayer graphene, which shows gapped insulating behaviour under a vertical electrical field, bilayer graphene domain walls feature one-dimensional valley-polarized conducting channels with a ballistic length of about 400 nanometres at 4 kelvin. Such topologically protected one-dimensional chiral states at bilayer graphene domain walls open up opportunities for exploring unique topological phases and valley physics in graphene.

  19. Geothermal hydrology of Warner Valley, Oregon: a reconnaissance study

    Energy Technology Data Exchange (ETDEWEB)

    Sammel, E.A.; Craig, R.W.

    1981-01-01

    Warner Valley and its southern extension, Coleman Valley, are two of several high-desert valleys in the Basin and Range province of south-central Oregon that contain thermal waters. At least 20 thermal springs, defined as having temperatures of 20/sup 0/C or more, issue from Tertiary basaltic flows and tuffs in and near the valleys. Many shallow wells also produce thermal waters. The highest measured temperature is 127/sup 0/C, reported from a well known as Crump geyser, at a depth of 200 meters. The hottest spring, located near Crump geyser, has a surface temperature of 78/sup 0/C. The occurrence of these thermal waters is closely related to faults and fault intersections in the graben and horst structure of the valleys. Chemical analyses show that the thermal waters are of two types: sodium chloride and sodium bicarbonate waters. Chemical indicators show that the geothermal system is a hot-water rather than a vapor-dominated system. Conductive heat flow in areas of the valley unaffected by hydrothermal convection is probably about 75 milliwatts per square meter. The normal thermal gradient in valley-fill dpeosits in these areas may be about 40/sup 0/C per kilometer. Geothermometers and mixing models indicate that temperatures of equilibration are at least 170/sup 0/C for the thermal components of the hotter waters. The size and location of geothermal reservoirs are unknown.

  20. Functional ecology of an Antarctic Dry Valley

    Science.gov (United States)

    Chan, Yuki; Van Nostrand, Joy D.; Zhou, Jizhong; Pointing, Stephen B.

    2013-01-01

    The McMurdo Dry Valleys are the largest ice-free region in Antarctica and are critically at risk from climate change. The terrestrial landscape is dominated by oligotrophic mineral soils and extensive exposed rocky surfaces where biota are largely restricted to microbial communities, although their ability to perform the majority of geobiological processes has remained largely uncharacterized. Here, we identified functional traits that drive microbial survival and community assembly, using a metagenomic approach with GeoChip-based functional gene arrays to establish metabolic capabilities in communities inhabiting soil and rock surface niches in McKelvey Valley. Major pathways in primary metabolism were identified, indicating significant plasticity in autotrophic, heterotrophic, and diazotrophic strategies supporting microbial communities. This represents a major advance beyond biodiversity surveys in that we have now identified how putative functional ecology drives microbial community assembly. Significant differences were apparent between open soil, hypolithic, chasmoendolithic, and cryptoendolithic communities. A suite of previously unappreciated Antarctic microbial stress response pathways, thermal, osmotic, and nutrient limitation responses were identified and related to environmental stressors, offering tangible clues to the mechanisms behind the enduring success of microorganisms in this seemingly inhospitable terrain. Rocky substrates exposed to larger fluctuations in environmental stress supported greater functional diversity in stress-response pathways than soils. Soils comprised a unique reservoir of genes involved in transformation of organic hydrocarbons and lignin-like degradative pathways. This has major implications for the evolutionary origin of the organisms, turnover of recalcitrant substrates in Antarctic soils, and predicting future responses to anthropogenic pollution. PMID:23671121

  1. Functional ecology of an Antarctic Dry Valley.

    Science.gov (United States)

    Chan, Yuki; Van Nostrand, Joy D; Zhou, Jizhong; Pointing, Stephen B; Farrell, Roberta L

    2013-05-28

    The McMurdo Dry Valleys are the largest ice-free region in Antarctica and are critically at risk from climate change. The terrestrial landscape is dominated by oligotrophic mineral soils and extensive exposed rocky surfaces where biota are largely restricted to microbial communities, although their ability to perform the majority of geobiological processes has remained largely uncharacterized. Here, we identified functional traits that drive microbial survival and community assembly, using a metagenomic approach with GeoChip-based functional gene arrays to establish metabolic capabilities in communities inhabiting soil and rock surface niches in McKelvey Valley. Major pathways in primary metabolism were identified, indicating significant plasticity in autotrophic, heterotrophic, and diazotrophic strategies supporting microbial communities. This represents a major advance beyond biodiversity surveys in that we have now identified how putative functional ecology drives microbial community assembly. Significant differences were apparent between open soil, hypolithic, chasmoendolithic, and cryptoendolithic communities. A suite of previously unappreciated Antarctic microbial stress response pathways, thermal, osmotic, and nutrient limitation responses were identified and related to environmental stressors, offering tangible clues to the mechanisms behind the enduring success of microorganisms in this seemingly inhospitable terrain. Rocky substrates exposed to larger fluctuations in environmental stress supported greater functional diversity in stress-response pathways than soils. Soils comprised a unique reservoir of genes involved in transformation of organic hydrocarbons and lignin-like degradative pathways. This has major implications for the evolutionary origin of the organisms, turnover of recalcitrant substrates in Antarctic soils, and predicting future responses to anthropogenic pollution.

  2. Modeling Indirect Tunneling in Silicon

    Science.gov (United States)

    Chen, Edward

    Indirect tunneling in silicon p-n junctions catches people's attention again in recent years. First, the phenomenon induces a serious leakage problem, so called gate-induced drain leakage (GIDL) effect, in modern metal-oxide-semiconductor field-effect transistors (MOSFETs). Second, it is utilized to develop a novel tunneling transistor with the sharp turn-on ability for continuing ITRS roadmap. Although the indirect tunneling is important for the state-of-the-art transistor-technology, the accuracy of the present tunneling models in technology computer-aided design (TCAD) tools is still vague. In the research work, the theory of indirect tunneling in silicon has been thoroughly studied. The phonon-assisted tunneling model has been developed and compared with the existing ones in the Sentaurus-Synopsys, Medici-Synopsys, and Atlas-Silvaco TCAD tools. Beyond these existing models, ours successfully predicts the indirect tunneling current under the different field direction in silicon. In addition, bandgap narrowing in heavily-doped p-n junctions under the reverse-biased condition is also studied during the model development. At the end of the research work, the application to low standby power (LSTP) transistors is demonstrated to show the capability of our tunneling model in the device level.

  3. Casting larger polycrystalline silicon ingots

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Tomlinson, T.; Cliber, J.; Shea, S.; Narayanan, M.

    1995-08-01

    Solarex has developed and patented a directional solidification casting process specifically designed for photovoltaics. In this process, silicon feedstock is melted in a ceramic crucible and solidified into a large grained semicrystalline silicon ingot. In-house manufacture of low cost, high purity ceramics is a key to the low cost fabrication of Solarex polycrystalline wafers. The casting process is performed in Solarex designed casting stations. The casting operation is computer controlled. There are no moving parts (except for the loading and unloading) so the growth process proceeds with virtually no operator intervention Today Solarex casting stations are used to produce ingots from which 4 bricks, each 11.4 cm by 11.4 cm in cross section, are cut. The stations themselves are physically capable of holding larger ingots, that would yield either: 4 bricks, 15 cm by 15 an; or 9 bricks, 11.4 cm by 11.4 an in cross-section. One of the tasks in the Solarex Cast Polycrystalline Silicon PVMaT Program is to design and modify one of the castings stations to cast these larger ingots. If successful, this effort will increase the production capacity of Solarex`s casting stations by 73% and reduce the labor content for casting by an equivalent percentage.

  4. Silicon spintronics: Progress and challenges

    Science.gov (United States)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-07-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  5. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  6. Waveguiding Light into Silicon Oxycarbide

    Directory of Open Access Journals (Sweden)

    Faisal Ahmed Memon

    2017-05-01

    Full Text Available In this work, we demonstrate the fabrication of single mode optical waveguides in silicon oxycarbide (SiOC with a high refractive index n = 1.578 on silica (SiO2, exhibiting an index contrast of Δn = 8.2%. Silicon oxycarbide layers were deposited by reactive RF magnetron sputtering of a SiC target in a controlled process of argon and oxygen gases. The optical properties of SiOC film were measured with spectroscopic ellipsometry in the near-infrared range and the acquired refractive indices of the film exhibit anisotropy on the order of 10−2. The structure of the SiOC films is investigated with atomic force microscopy (AFM and scanning electron microscopy (SEM. The channel waveguides in SiOC are buried in SiO2 (n = 1.444 and defined with UV photolithography and reactive ion etching techniques. Propagation losses of about 4 dB/cm for both TE and TM polarizations at telecommunication wavelength 1550 nm are estimated with cut-back technique. Results indicate the potential of silicon oxycarbide for guided wave applications.

  7. The DAMPE silicon tungsten tracker

    CERN Document Server

    Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D

    2017-01-01

    The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

  8. Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer.

    Science.gov (United States)

    Yamada, Shigeru; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Konagai, Makoto

    2014-01-01

    The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1.49 eV, which corresponds to the optical bandgap of the silicon nanocrystal materials, suggesting that it is possible to fabricate the solar cells with silicon nanocrystal materials, whose bandgaps are wider than that of crystalline silicon. 85.35.Be; 84.60.Jt; 78.67.Bf.

  9. Silicon nanostructures in silicon oxynitride for PV application: effect of argon

    Energy Technology Data Exchange (ETDEWEB)

    Ehrhardt, Fabien; Ferblantier, Gerald; Muller, Dominique; Slaoui, Abdelilah [Institut d' Electronique du Solide et des Systemes, UMR CNRS-UdS 7163, 23 Rue du Loess, BP20, 67034 Strasbourg cedex 2 (France); Ulhaq-Bouillet, Corinne [Institut de Physique et Chimie des Materiaux de Strasbourg, UMR CNRS-UdS 7504, 23 Rue du Loess, BP43, 67034 Strasbourg cedex 2 (France)

    2012-10-15

    Silicon rich silicon oxynitride (SRSON) were deposited by ECR-PECVD to form silicon nanostructures. The effect of argon flow during the deposition was investigated. The silicon nanoparticles were fabricated by a classical thermal treatment of SRSON films. The structural properties of the SRSON films were investigated by RBS and FTIR measurements. We show that the silicon excess in the SiO{sub x}N{sub y} matrix changes slightly with Ar flow but it has a significant impact on the silicon nanoparticles morphology embedded in the silicon oxynitride layer. Different shapes for silicon nanostructures ranging from separated Si nanocrystals to Si nanocolumns were formed as studied by energy-filtred transmission electron microscopy analysis (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  11. Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A. [Institut National des Sciences Appliquees (INSA), 69 - Villeurbanne (France). Lab. de Physique de la Matiere; Ouldabbes, A.; Chabane-Sari, N.E. [Institut National des Sciences Appliquees (INSA), 69 - Villeurbanne (France). Lab. de Physique de la Matiere; Lab. des Materiaux et Energies Renouvelables, Tlemcen (Algeria)

    2001-07-01

    The aim of this experiment is to grow a thin silicon layer (<50{mu}m) by liquid phase epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 {mu}m epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re-usable. In this work, we used the following procedure : the porous silicon formation by HF anodisation on (100) or (111) Si wafers is realised in first step, followed by an eventual annealing in H{sub 2} atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

  12. Silicon entering through silicon utilizing organisms has biological effects in human beings

    Science.gov (United States)

    Shraddhamayananda, S.

    2012-12-01

    Except in the lungs, there is no evidence that silicon can do any harm in our body and Silicon is as essential as magnesium and calcium for us. It helps in proper activities of the bone tissues and all of the components in the human skeletal system. It can prevent osteoporosis in bones and also helps in lowering of blood pressure. Silicon can also inhibit fungal disease by physically inhibiting fungal germ tube penetration of the epidermis. Many of our foods which are associated with silicon utilizing organisms like rice, vegetables, wheat etc, contain plenty silicon, however, during processing most silicon get lost. In alternative medicine silicon is used to promote expulsion of foreign bodies from tissue, in formation of suppuration and finally expulsion of pus from abscesses. Silicon is also used to remove fibrotic lesions and scar tissue and in this way it can prevent formation of keloids. Sometimes it is also used to treat chronic otitis media, and chronic fistula,

  13. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  14. Signal development in irradiated silicon detectors

    CERN Document Server

    Kramberger, Gregor; Mikuz, Marko

    2001-01-01

    This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

  15. Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

    DEFF Research Database (Denmark)

    Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron

    2007-01-01

    The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...... by a classical Drude–Smith model, suitable for disorder-driven metal–insulator transitions. In this work, we explore the time evolution of the frequency dependent complex conductivity after optical injection of carriers on a picosecond time scale. Furthermore, we show the lifetime of photoconductivity...

  16. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  17. Groundwater availability of the Central Valley Aquifer, California

    Science.gov (United States)

    Faunt, Claudia C.

    2009-01-01

    California's Central Valley covers about 20,000 square miles and is one of the most productive agricultural regions in the world. More than 250 different crops are grown in the Central Valley with an estimated value of $17 billion per year. This irrigated agriculture relies heavily on surface-water diversions and groundwater pumpage. Approximately one-sixth of the Nation's irrigated land is in the Central Valley, and about one-fifth of the Nation's groundwater demand is supplied from its aquifers. The Central Valley also is rapidly becoming an important area for California's expanding urban population. Since 1980, the population of the Central Valley has nearly doubled from 2 million to 3.8 million people. The Census Bureau projects that the Central Valley's population will increase to 6 million people by 2020. This surge in population has increased the competition for water resources within the Central Valley and statewide, which likely will be exacerbated by anticipated reductions in deliveries of Colorado River water to southern California. In response to this competition for water, a number of water-related issues have gained prominence: conservation of agricultural land, conjunctive use, artificial recharge, hydrologic implications of land-use change, and effects of climate variability. To provide information to stakeholders addressing these issues, the USGS Groundwater Resources Program made a detailed assessment of groundwater availability of the Central Valley aquifer system, that includes: (1) the present status of groundwater resources; (2) how these resources have changed over time; and (3) tools to assess system responses to stresses from future human uses and climate variability and change. This effort builds on previous investigations, such as the USGS Central Valley Regional Aquifer System and Analysis (CV-RASA) project and several other groundwater studies in the Valley completed by Federal, State and local agencies at differing scales. The

  18. Near-surface heat flow in Saline Valley, California

    Energy Technology Data Exchange (ETDEWEB)

    Mase, C.W.; Galanis, S.P. Jr.; Munroe, R.J.

    1979-01-01

    With the exception of values from one borehole drilled at Palm Spring and three boreholes drilled around Saline Valley dry lake, eight new heatflow values in Saline Valley, California, are within or somewhat below the range one would expect for this region of the Basin and Range heat-flow province. The lack of recent volcanism in the area and the apparently normal Basin and Range heat flow suggest that geothermal systems within the valley are stable stationary phases supported by high regional heat flow and forced convection.

  19. Valley-selective topologically ordered states in irradiated bilayer graphene

    Science.gov (United States)

    Qu, Chunlei; Zhang, Chuanwei; Zhang, Fan

    2018-01-01

    Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is, however, topologically trivial, because a valley-independent gap is energetically favorable. Here, we show that under the application of interlayer electric field and circularly polarized light, one valley can be selected to exhibit the original interaction instability while the other is frozen out. Tuning this Floquet system stabilizes multiple competing topologically ordered states, distinguishable by edge transport and circular dichroism. Notably, quantized charge, spin, and valley Hall conductivities coexist in one stabilized state.

  20. Holocene alluvial fills in the South Loup Valley, Nebraska

    Science.gov (United States)

    May, David W.

    1989-07-01

    Four Holocene alluvial fills are present in Nebraska's South Loup River valley. Fill IV, the oldest and thickest, was deposited between 10,200 and 4800 14C yr B.P.; Fill III has an age of about 3000 14C yr B.P.; Fill II is younger than 2100 and older than 900 14C yr B.P.; and Fill I is younger than 900 14C yr B.P. Regional contemporaneity of valley alluviation in the eastcentral Great Plains suggests that climate has controlled long-term sediment storage in the South Loup River valley.

  1. VALMET: a valley air pollution model. Final report. Revision 1

    Energy Technology Data Exchange (ETDEWEB)

    Whiteman, C.D.; Allwine, K.J.

    1985-04-01

    An air quality model is described for predicting air pollution concentrations in deep mountain valleys arising from nocturnal down-valley transport and diffusion of an elevated pollutant plume, and the fumigation of the plume on the valley floor and sidewalls after sunrise. Included is a technical description of the model, a discussion of the model's applications, the required model inputs, sample calculations and model outputs, and a full listing of the FORTRAN computer program. 55 refs., 27 figs., 6 tabs.

  2. Silicon Photonics Platform for Government Applications

    Science.gov (United States)

    2016-03-31

    high difference in refractive index that allows the silicon to guide light around relatively sharp bends, facilitating devices with dimensions in the...978-1-4799-5380-6/15/$31.00 ©2015 IEEE Silicon Photonics Platform for Government Applications Anthony L. Lentine, Christopher T. DeRose, Paul...Labs PO Box 5800 MS1082 Albuquerque, NM 87185 505-284-1736 alentine@sandia.gov Abstract—   We review Sandia’s silicon photonics platform

  3. Silicon-based nanochannel glucose sensor

    OpenAIRE

    Wang, Xihua; Chen, Yu; Gibney, Katherine A.; Erramilli, Shyamsunder; Mohanty, Pritiraj

    2008-01-01

    Silicon nanochannel biological field effect transistors have been developed for glucose detection. The device is nanofabricated from a silicon-on-insulator wafer with a top-down approach and surface functionalized with glucose oxidase. The differential conductance of silicon nanowires, tuned with source-drain bias voltage, is demonstrated to be sensitive to the biocatalyzed oxidation of glucose. The glucose biosensor response is linear in the 0.5-8 mM concentration range with 3-5 min response...

  4. Silicon Photomultiplier - New Era of Photon Detection

    OpenAIRE

    Saveliev, Valeri

    2010-01-01

    Silicon photomultipliers is novel type of the semiconductor photodetector for the detecting of low photon flux. Already now the technology is developed and suitable for many critical application as medical imaging, and biology, homeland security, optic communications, experimental physics and military applications. Few world well known companies Hamamatsu, Sensl, Kotura are already producing or close to production of silicon photomultiplier type sensors. Near future of silicon photomultiplier...

  5. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  6. Solar cell with silicon oxynitride dielectric layer

    Science.gov (United States)

    Shepherd, Michael; Smith, David D

    2015-04-28

    Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0silicon oxynitride dielectric layer.

  7. Silicon Micromachined Microlens Array for THz Antennas

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  8. Silicon solid state devices and radiation detection

    CERN Document Server

    Leroy, Claude

    2012-01-01

    This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers stateof- the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application.

  9. High breakdown-strength composites from liquid silicone rubbers

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Zakaria, Shamsul Bin; Yu, Liyun

    2014-01-01

    In this paper we investigate the performance of liquid silicone rubbers (LSRs) as dielectric elastomer transducers. Commonly used silicones in this application include room-temperature vulcanisable (RTV) silicone elastomers and composites thereof. Pure LSRs and their composites with commercially...

  10. California's Central Valley Groundwater Study: A Powerful New Tool to Assess Water Resources in California's Central Valley

    Science.gov (United States)

    Faunt, Claudia C.; Hanson, Randall T.; Belitz, Kenneth; Rogers, Laurel

    2009-01-01

    Competition for water resources is growing throughout California, particularly in the Central Valley. Since 1980, the Central Valley's population has nearly doubled to 3.8 million people. It is expected to increase to 6 million by 2020. Statewide population growth, anticipated reductions in Colorado River water deliveries, drought, and the ecological crisis in the Sacramento-San Joaquin Delta have created an intense demand for water. Tools and information can be used to help manage the Central Valley aquifer system, an important State and national resource.

  11. Bird Use of Imperial Valley Crops [ds427

    Data.gov (United States)

    California Department of Resources — Agriculture crops in the Imperial Valley of California provide valuable habitat for many resident and migratory birds and are a very important component of the...

  12. Canaan Valley National Wildlife Refuge Common Dragonflies and Damselflies

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — The Canaan Valley NWR is cooperating with the West Virginia Division of Natural Resources, Natural Heritage Program to inventory dragonflies and damselflies in an...

  13. Comparison of access to medicines between Klang Valley and East ...

    African Journals Online (AJOL)

    income of USD1/person/day) between urbanised Klang Valley and rural East Coast of Peninsular Malaysia. Methods: A semi-structured interview was conducted with caregivers to determine demographics, access to medicines, knowledge, ...

  14. Anuran Call Survey Summary 2006 Canaan Valley National Wildlife Refuge

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Anuran call surveys were conducted at Canaan Valley National Wildlife Refuge in April-June 2006 using the protocol developed by the North American Amphibian...

  15. Fishery Management Plan: Minnesota Valley National Wildlife Refuge

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Minnesota Valley National Wildlife Refuge (NWR) contains a limited fishery resource. Hogback Ponds, Round Lake, Bituminous Pond, and Blick Estate Stream have fishery...

  16. Law Enforcement Plan: Minnesota Valley National Wildlife Refuge

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — The Minnesota Valley NWR Law Enforcement Plan clarifies U.S. Fish and Wildlife enforcement policies as they apply to the Refuge. It provides information about...

  17. NPP Tropical Forest: Magdalena Valley, Colombia, 1970-1971

    Data.gov (United States)

    National Aeronautics and Space Administration — ABSTRACT: Biomass, litterfall, and nutrient content of above-ground vegetation and soil for a tropical seasonal evergreen forest at Magdalena Valley, Columbia,...

  18. Networking With Landscape: Local Initiatives in an Italian Alpine Valley

    National Research Council Canada - National Science Library

    Giorgio De Ros; Astrid Mazzola

    2012-01-01

    ...? To increase our understanding of these issues, an analysis was carried out by using the theoretical framework of the sociology of translation on 8 landscape-based initiatives in an Italian Alpine valley...

  19. Rock glacier inventory, Printse Valley, Valais, Switzerland, Version 1

    Data.gov (United States)

    National Aeronautics and Space Administration — The Printse Valley is a 16-km-long north-orientated basin. The south-part (summits at 300 m asl) is glacierized. The intermediate sector, more continental, is very...

  20. Spin-valley splitting of electron beam in graphene

    Directory of Open Access Journals (Sweden)

    Yu Song

    2016-11-01

    Full Text Available We study spatial separation of the four degenerate spin-valley components of an electron beam in a EuO-induced and top-gated ferromagnetic/pristine/strained graphene structure. We show that, in a full resonant tunneling regime for all beam components, the formation of standing waves can lead sudden phase jumps ∼−π and giant lateral Goos-Hänchen shifts as large as the transverse beam width, while the interplay of the spin and valley imaginary wave vectors in the modulated regions can lead differences of resonant angles for the four spin-valley flavors, manifesting a spin-valley beam splitting effect. The splitting effect is found to be controllable by the gating and strain.

  1. A Statistical Model of Rift Valley Fever Activity in Egypt

    National Research Council Canada - National Science Library

    John M. Drake; Ali N. Hassan; John C. Beier

    2013-01-01

    Rift Valley fever (RVF) is a viral disease of animals and humans and a global public health concern due to its ecological plasticity, adaptivity, and potential for spread to countries with a temperate climate...

  2. Rappahannock River Valley National Wildlife Refuge: Comprehensive Conservation Plan

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This Comprehensive Conservation Plan (CCP) was written to guide management on Rappahannock River Valley NWR for the next 15 years. This plan outlines the Refuge...

  3. Vernal Pool Complexes - Central Valley, 1989-1998 [ds36

    Data.gov (United States)

    California Department of Resources — This Arc/Info coverage is a polygon layer of vernal pool complexes greater than 40 acres in size for 29 counties throughout the greater Central Valley, and some...

  4. Groundwater discharge area for Diamond Valley, Central Nevada, 1968

    Data.gov (United States)

    U.S. Geological Survey, Department of the Interior — This dataset represents "phreatophyte areas" mapped as part of an analysis of irrigation pumping in Diamond Valley, Nevada published in 1968. The data were digitized...

  5. Fire Management Plan Rappahannock River Valley National Wildlife Refuge 2009

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This plan for the Rappahannock River Valley National Wildlife Refuge will provide guidance on a wide range of fire management activities including preparedness,...

  6. Willamette Valley - Invasive Species Management with Volunteers 2010

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Volunteers worked with staff to survey for and treat 17 different invasive species within the Willamette Valley Refuges (Ankeny, Baskett Slough and William L....

  7. Stakeholder Evaluation for Canaan Valley National Wildlife Refuge : Completion Report

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This report provides a summary of results for the stakeholder evaluation conducted for Canaan Valley National Wildlife Refuge in winter 2006–2007. The purpose of...

  8. Willamette Valley - Invasive Species Management with Volunteers 2009

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Volunteers worked with staff to map and control invasive species within the Willamette Valley National Wildlife Refuge Complex refuges (William L. Finley, Ankeny,...

  9. San Joaquin Valley Aerosol Health Effects Research Center (SAHERC)

    Data.gov (United States)

    Federal Laboratory Consortium — At the San Joaquin Valley Aerosol Health Effects Center, located at the University of California-Davis, researchers will investigate the properties of particles that...

  10. Minnesota Valley National Wildlife Refuge annual narrative: Fiscal year 1997

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This annual narrative report for Minnesota Valley National Wildlife Refuge outlines Refuge accomplishments during the 1997 fiscal year. The report begins with an...

  11. Trip report (12-13 September 1995) - Canaan Valley NWR

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This reports describes recommendations for management practices at Canaan Valley National Wildlife Refuge. Topics include the following: deer herd management,...

  12. Minnesota Valley National Wildlife Refuge: Master Plan Amendment No. 1

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — The Master Plan developed for Minnesota Valley National Wildlife Refuge proposed that a refuge administration office and maintenance facility be located on an upland...

  13. Trip Report (November 29 - December 1, 2005) - Canaan Valley NWR

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Report describes suggestions for management alternatives to the Canaan Valley NWR. The major issues, or impediments to habitat management, that Sepik and Laskowski...

  14. Avian botulism in the southern San Joaquin valley 1970

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — A joint effort of the Department of Fish and' Game and the U. S. Bureau of Sport Fisheries and Wildlife contained botulism losses in the southern San Joaquin Valley...

  15. The Trail Inventory of Coachella Valley NWR [Cycle 2

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — The purpose of this report is to create a baseline inventory of all non-motorized trails on Coachella Valley National Wildlife Refuge. Trails in this inventory are...

  16. Steelhead Critical Habitat, Central Valley - NOAA [ds123

    Data.gov (United States)

    California Department of Resources — This layer depicts areas designated for Steelhead Critical Habitat as well as habitat type and quality in the California Central Valley Evolutionary Significant Unit...

  17. Chinook Critical Habitat, Central Valley - NOAA [ds125

    Data.gov (United States)

    California Department of Resources — This layer depicts areas designated for Chinook Critical Habitat as well as habitat type and quality in the Central Valley Spring-run Evolutionary Significant Unit...

  18. Stillwater Marsh and Lahontan Valley Wetlands Literature Review

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — A review of known literature on Lahontan Valley marshlands was made by The Nature Conservancy in preparation for the Stillwater Water Management Analysis Scoping...

  19. Factors influencing immunisation coverage in Mathare Valley, Nairobi

    African Journals Online (AJOL)

    : Cross section destrictive study. Setting: Mathare valley slums in Central district of Nairobi, Kenya. Subjects: Seven hundred and twelve children aged 12-23 months. Results: Access to immunisation services was excellent at 95.6%. However ...

  20. Fire Management Plan Rappahannock River Valley National Wildlife Refuge 2009

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This plan for Rappahannock River Valley National Wildlife Refuge will provide guidance on a wide range of fire management activities including preparedness,...

  1. Adapting to Climate Change in Peru's Mantaro Valley | IDRC ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    The Mantaro Valley in central Peru is highly vulnerable to extreme weather events, such as droughts, floods, and frost. According to recent projections, this vulnerability will increase in coming years due to climate change.

  2. Wildlife Inventory Plan: Minnesota Valley National Wildlife Refuge

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — The goals for this Wildlife Inventory Plan for Minnesota Valley NWR are: (1) to provide as good a survey method as possible to estimate population levels of key...

  3. Willamette Valley - Invasive Species Management with Volunteers 2012

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Volunteers worked with refuge staff to survey for and treat invasive species on the Willamette Valley Refuges (Ankeny, Baskett Slough and WL Finley NWR). False brome...

  4. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  5. New Perspectives in Silicon Micro and Nanophotonics

    Science.gov (United States)

    Casalino, M.; Coppola, G.; De Stefano, L.; Calio, A.; Rea, I.; Mocella, V.; Dardano, P.; Romano, S.; Rao, S.; Rendina, I.

    2015-05-01

    In the last two decades, there has been growing interest in silicon-based photonic devices for many optical applications: telecommunications, interconnects and biosensors. In this work, an advance overview of our results in this field is presented. Proposed devices allow overcoming silicon intrinsic drawbacks limiting its application as a photonic substrate. Taking advantages of both non-linear and linear effects, size reduction at nanometric scale and new two-dimensional emerging materials, we have obtained a progressive increase in device performance along the last years. In this work we show that a suitable design of a thin photonic crystal slab realized in silicon nitride can exhibit a very strong field enhancement. This result is very promising for all photonic silicon devices based on nonlinear phenomena. Moreover we report on the fabrication and characterization of silicon photodetectors working at near-infrared wavelengths based on the internal photoemission absorption in a Schottky junction. We show as an increase in device performance can be obtained by coupling light into both micro-resonant cavity and waveguiding structures. In addition, replacing metal with graphene in a Schottky junction, a further improve in PD performance can be achieved. Finally, silicon-based microarray for biomedical applications, are reported. Microarray of porous silicon Bragg reflectors on a crystalline silicon substrate have been realized using a technological process based on standard photolithography and electrochemical anodization of the silicon. Our insights show that silicon is a promising platform for the integration of various optical functionalities on the same chip opening new frontiers in the field of low-cost silicon micro and nanophotonics.

  6. Emerging heterogeneous integrated photonic platforms on silicon

    Science.gov (United States)

    Fathpour, Sasan

    2015-05-01

    Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with

  7. Crystal growth and evaluation of silicon for VLSI and ULSI

    CERN Document Server

    Eranna, Golla

    2014-01-01

    PrefaceAbout the AuthorIntroductionSilicon: The SemiconductorWhy Single CrystalsRevolution in Integrated Circuit Fabrication Technology and the Art of Device MiniaturizationUse of Silicon as a SemiconductorSilicon Devices for Boolean ApplicationsIntegration of Silicon Devices and the Art of Circuit MiniaturizationMOS and CMOS Devices for Digital ApplicationsLSI, VLSI, and ULSI Circuits and ApplicationsSilicon for MEMS ApplicationsSummaryReferencesSilicon: The Key Material for Integrated Circuit Fabrication TechnologyIntroductionPreparation of Raw Silicon MaterialMetallurgical-Grade SiliconPuri

  8. Partitioning Effects in Recrystallization of Silicon from Silicon-Metal Solutions

    Energy Technology Data Exchange (ETDEWEB)

    Good, E. A.; Wang, T. H.; Ciszek, T. F.; Frost, R. H.; Page, M. R.; Landry, M. D.

    2002-08-01

    The objective of this work is to investigate various silicon-metal eutectic systems that selectively retain detrimental impurities, such as Ni, Co, Fe, Cr, in the melt so that silicon may be purified. We studied possible interactions in the melt and in the silicon crystal between impurity elements and solvent metals that lead to reduced or enhanced impurity partition relative to the respective silicon-impurity binary systems. Systems such as Al- Si, Cu-Si, and In-Si show promises of reduced impurity incorporations in recrystallized silicon, which are good candidates for further investigation besides Ga-Si, Au-Si, and Ag-Si.

  9. The STAR silicon vertex tracker: a large area silicon drift detector

    CERN Document Server

    Lynn, D; Beuttenmüller, Rolf H; Caines, H; Chen, W; Dimassimo, D; Dyke, H; Elliot, D; Eremin, V; Grau, M; Hoffmann, G W; Humanic, T; Ilyashenko, Yu S; Kotov, I; Kraner, H W; Kuczewski, P; Leonhardt, B; Li, Z; Liaw, C J; Lo Curto, G; Middelkamp, P; Minor, R; Munhoz, M; Ott, G; Pandey, S U; Pruneau, C A; Rykov, V L; Schambach, J; Sedlmeir, J; Soja, B; Sugarbaker, E R; Takahashi, J; Wilson, K; Wilson, R

    2000-01-01

    The Solenoidal Tracker At RHIC-Silicon Vertex Tracker (STAR-SVT) is a three barrel microvertex detector based upon silicon drift detector technology. As designed for the STAR-SVT, silicon drift detectors (SDDs) are capable of providing unambiguous two-dimensional hit position measurements with resolutions on the order of 20 mu m in each coordinate. Achievement of such resolutions, particularly in the drift direction coordinate, depends upon certain characteristics of silicon and drift detector geometry that are uniquely critical for silicon drift detectors hit measurements. Here we describe features of the design of the STAR-SVT SDDs and the front-end electronics that are motivated by such characteristics.

  10. Geology and ground-water resources of Ogden Valley, Utah

    Science.gov (United States)

    Leggette, R.M.; Taylor, G.H.

    1937-01-01

    Ogden Valley is a fault trough bounded on both the east and west by faults that dip toward the middle of the valley. This fault trough contains unconsolidated deposits of clay, sand, and gravel, whose thickness is more than 600 feet. These materials are stream and lake deposits and in places are well sorted and stratified. The lake sediments were laid down in a small lake that occupied Ogden Valley and that was connected with glacial Lake Bonneville at its high stage by an arm of water that occupied Ogden Canyon. During this stage of Lake Bonneville the Ogden Valley was completely filled with lake sediments up to an altitude of about 4,900 feet. These sediments include about 70 feet of clay, sand, and gravel in alternating layers, below which is a bed of varved clay whose maximum thickness is about 70 feet. This clay is continuous under the lower parts of the valley and is the confining bed that produces the artesian conditions. Below the varved clay is a deposit of silt, sand, and gravel of unknown thickness, most of which is believed to be pre-Bonneville alluvium.In most summers the streams entering Ogden Valley are diverted for irrigation, and the upper parts of their channels are generally dry during the irrigation season. Lower down in the valley seepage water appears in the channels, and below these points there is continuous flow. The flow of the Ogden River increases as it passes through Ogden Canyon. This gain in flow is believed to be derived chiefly from ground-water seepage from the canyon walls, although there is probably some groundwater underflow from Ogden Valley at the head of Ogden Canyon. Some of the gain is also due to leakage from pipe lines in the canyon.Of the 146 wells whose records are given in this report, 70 are flowing wells.

  11. Seismicity related to geothermal development in Dixie Valley, Nevada

    Energy Technology Data Exchange (ETDEWEB)

    Ryall, A.S.; Vetter, U.R.

    1982-07-08

    A ten-station seismic network was operated in and around the Dixie Valley area from January 1980 to November 1981; three of these stations are still in operation. Data from the Dixie Valley network were analyzed through 30 Jun 1981, and results of analysis were compared with analysis of somewhat larger events for the period 1970-1979. The seismic cycle in the Western Great Basic, the geologic structural setting, and the instrumentation are also described.

  12. 3D View of Death Valley, California

    Science.gov (United States)

    2000-01-01

    This 3-D perspective view looking north over Death Valley, California, was produced by draping ASTER nighttime thermal infrared data over topographic data from the US Geological Survey. The ASTER data were acquired April 7, 2000 with the multi-spectral thermal infrared channels, and cover an area of 60 by 80 km (37 by 50 miles). Bands 13, 12, and 10 are displayed in red, green and blue respectively. The data have been computer enhanced to exaggerate the color variations that highlight differences in types of surface materials. Salt deposits on the floor of Death Valley appear in shades of yellow, green, purple, and pink, indicating presence of carbonate, sulfate, and chloride minerals. The Panamint Mtns. to the west, and the Black Mtns. to the east, are made up of sedimentary limestones, sandstones, shales, and metamorphic rocks. The bright red areas are dominated by the mineral quartz, such as is found in sandstones; green areas are limestones. In the lower center part of the image is Badwater, the lowest point in North America.Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER) is one of five Earth-observing instruments launched December 18, 1999, on NASA's Terra satellite. The instrument was built by Japan's Ministry of International Trade and Industry. A joint U.S./Japan science team is responsible for validation and calibration of the instrument and the data products. Dr. Anne Kahle at NASA's Jet Propulsion Laboratory, Pasadena, Calif., is the U.S. Science team leader; Moshe Pniel of JPL is the project manager. ASTER is the only high resolution imaging sensor on Terra. The primary goal of the ASTER mission is to obtain high-resolution image data in 14 channels over the entire land surface, as well as black and white stereo images. With revisit time of between 4 and 16 days, ASTER will provide the capability for repeat coverage of changing areas on Earth's surface.The broad spectral coverage and high spectral resolution of ASTER will provide

  13. Fabrication of thick silicon nitride blocks embedded in low-resistivity silicon substrates for radio frequency applications

    OpenAIRE

    Fernandez, L.J.; Berenschot, Johan W.; Wiegerink, Remco J.; Flokstra, Jakob; Flokstra, Jan; Jansen, Henricus V.; Elwenspoek, Michael Curt

    2006-01-01

    Thick silicon nitride blocks embedded in silicon wafers were recently proposed as a substrate for RF devices. In this paper we show that deep trenches filled with silicon nitride—having thin slices of monocrystalline silicon in between—already result in a significantly improved RF behavior. Measurement results are presented on RF coplanar waveguides using solid silicon nitride blocks and silicon nitride filled trenches with various dimensions and orientations with respect to the transmission ...

  14. Valley-selective optical Stark effect probed by Kerr rotation

    Science.gov (United States)

    LaMountain, Trevor; Bergeron, Hadallia; Balla, Itamar; Stanev, Teodor K.; Hersam, Mark C.; Stern, Nathaniel P.

    2018-01-01

    The ability to monitor and control distinct states is at the heart of emerging quantum technologies. The valley pseudospin in transition metal dichalcogenide (TMDC) monolayers is a promising degree of freedom for such control, with the optical Stark effect allowing for valley-selective manipulation of energy levels in WS2 and WSe2 using ultrafast optical pulses. Despite these advances, understanding of valley-sensitive optical Stark shifts in TMDCs has been limited by reflectance-based detection methods where the signal is small and prone to background effects. More sensitive polarization-based spectroscopy is required to better probe ultrafast Stark shifts for all-optical manipulation of valley energy levels. Here, we show time-resolved Kerr rotation to be a more sensitive probe of the valley-selective optical Stark effect in monolayer TMDCs. Compared to the established time-resolved reflectance methods, Kerr rotation is less sensitive to background effects. Kerr rotation provides a fivefold improvement in the signal-to-noise ratio of the Stark effect optical signal and a more precise estimate of the energy shift. This increased sensitivity allows for observation of an optical Stark shift in monolayer MoS2 that exhibits both valley and energy selectivity, demonstrating the promise of this method for investigating this effect in other layered materials and heterostructures.

  15. Assessment of Wastewater in Duhok Valley, Kurdistan Region/Iraq

    Directory of Open Access Journals (Sweden)

    Najmaldin E. Hassan

    2016-08-01

    Full Text Available In order to characterize the waste water in Duhok valley in Duhok governorate, during 25km, seven sites were selected in Duhok valley, to represent their water quality. Monthly samples were collected from the Duhok valley for the period from, April to September, 2015. The qualitative study of Duhok valley water tested, as considered one of the main sources of water pollution for Musol Lake. The physical and chemical test for water samples are taken from different locations in Duhok valley. To know the degree of pollution, and the impact of self-purification processes to improve water quality before arriving to the Mosul Lake, and the indicated results of the study a lack of dissolved oxygen in the water (DO. And high organic load values, (BOD and most of the bad qualities during water passage within the city of Duhok, while meat a significant improvement in the quality of water downstream before arriving at the dam Lake, is attributed to the effect of operations of self- purification ability of water. In spite of salinity problems and toxicity, the quality of water is suitable for irrigation crops on both sides of the valley .The all samples were tested for conductivity, TDS, pH, total hardness, chloride, alkalinity, sulfate, BOD, and phosphate, according to the standard methods.

  16. Antifan activism as a response to MTV's The Valleys

    Directory of Open Access Journals (Sweden)

    Bethan Jones

    2015-06-01

    Full Text Available MTV has launched several reality TV shows in the United Kingdom, but one, The Valleys (2012–14, about youth moving from the South Wales Valleys to Cardiff, has received much criticism. Grassroots criticism of the show arose, and a Valleys-centric campaign, The Valleys Are Here, took direct action. I adopt Jonathan Gray's definition of antifans to complicate ideas of fan activism. I utilize comments and posts made on the Valleys Are Here Twitter feed and Facebook account, as well as the organization's Web site, to examine the ways in which they encourage activism among antifans of the series. I pay particular attention to activist calls for MTV to be held accountable for its positioning of Wales and the Valleys, and to how it encourages participation among varied groups of people whose common denominator is their dislike of the series. Fan activism is not exclusive to people who consider themselves fans, and notions of fan activism can be complicated by drawing in antifans.

  17. Geothermal resource assessment of western San Luis Valley, Colorado

    Energy Technology Data Exchange (ETDEWEB)

    Zacharakis, Ted G.; Pearl, Richard Howard; Ringrose, Charles D.

    1983-01-01

    The Colorado Geological Survey initiated and carried out a fully integrated assessment program of the geothermal resource potential of the western San Luis Valley during 1979 and 1980. The San Luis Valley is a large intermontane basin located in southcentral Colorado. While thermal springs and wells are found throughout the Valley, the only thermal waters found along the western part of the Valley are found at Shaw Warm Springs which is a relatively unused spring located approximately 6 miles (9.66 km) north of Del Norte, Colorado. The waters at Shaws Warm Spring have a temperature of 86 F (30 C), a discharge of 40 gallons per minute and contain approximately 408 mg/l of total dissolved solids. The assessment program carried out din the western San Luis Valley consisted of: soil mercury geochemical surveys; geothermal gradient drilling; and dipole-dipole electrical resistivity traverses, Schlumberger soundings, Audio-magnetotelluric surveys, telluric surveys, and time-domain electro-magnetic soundings and seismic surveys. Shaw Warm Springs appears to be the only source of thermal waters along the western side of the Valley. From the various investigations conducted the springs appear to be fault controlled and is very limited in extent. Based on best evidence presently available estimates are presented on the size and extent of Shaw Warm Springs thermal system. It is estimated that this could have an areal extent of 0.63 sq. miles (1.62 sq. km) and contain 0.0148 Q's of heat energy.

  18. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Zahra Ostadmahmoodi Do

    2016-06-01

    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  19. Optical manipulation of silicon nanowires on silicon nitride waveguides

    Science.gov (United States)

    Néel, D.; Gétin, S.; Fedeli, J.-M.; Baron, T.; Gentile, P.; Ferret, P.

    2007-01-01

    Semiconductor nanowires are drawing more and more interest due to their numerous potential applications in nanoelectronics devices [1,2], including interconnects, transistor channels, nanoelectrodes, or in the emerging application areas of photonics [3], chemistry [4] and photovoltaics [5]. In this context, optical tweezers appear like a pertinent tool for the manipulation and assembly of nanowires into complex structures. It was previously shown that the near-field existing at the surface of a waveguide allows the micromanipulation of nanoparticles and biological objects [6,7]. In this article, we investigate for the first time to our knowledge the motion of silicon nanowires above silicon nitride waveguides. The nanowires in aqueous solution are attracted toward the waveguide by optical gradient forces. The nanowires align themselves according to the axis of the waveguide and get propelled along the waveguide due to radiation pressure. Velocities are up to 40 μm/s. For a better understanding of the experimental results, the distribution of the electromagnetic field in the nanowire is calculated using the finite element method. Then, the resulting optical forces exerted on the nanowires are calculated, thanks to the Maxwell stress tensor formalism.

  20. Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

    Science.gov (United States)

    Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott

    2003-01-01

    Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

  1. Epitaxial silicon carbide on a 6″ silicon wafer

    Science.gov (United States)

    Kukushkin, S. A.; Lukyanov, A. V.; Osipov, A. V.; Feoktistov, N. A.

    2014-01-01

    The results of the growth of silicon-carbide films on silicon wafers with a large diameter of 150 mm (6″) by using a new method of solid-phase epitaxy are presented. A SiC film growing on Si wafers was studied by means of spectral ellipsometry, SEM, X-ray diffraction, and Raman scattering. As follows from the studies, SiC layers are epitaxial over the entire surface of a 150-mm wafer. The wafers have no mechanical stresses, are smooth, and do not have bends. The half-width of the X-ray rocking curve (FWHMω- θ) of the wafers varies in the range from 0.7° to 0.8° across the thickness layer of 80-100 nm. The wafers are suitable as templates for the growth of SiC, AlN, GaN, ZnO, and other wide-gap semiconductors on its surface using standard CVD, HVPE, and MBE methods.

  2. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  3. Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

    Science.gov (United States)

    Yuan, Zhishan; Wang, Chengyong; Chen, Ke; Ni, Zhonghua; Chen, Yunfei

    2017-08-01

    In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H2 atmosphere). Micro size Cu pattern fabrication decided whether α-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis α-SiNWs. What is more, the size of α-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 × 103 Ω·cm (84 nm diameter and 21 μm length). This simple fabrication method makes application of α-SiNWs become possible.

  4. The Belle Silicon Vertex Detector

    CERN Document Server

    Kawasaki, T

    2002-01-01

    The Belle Silicon Vertex Detector (SVD) started working from June 1999 at the KEK B-factory experiment. The main purpose of the SVD is to make precise measurements of the B decay vertex position, which are essential for the observation of CP asymmetries. Excellent vertex resolution and a good detection efficiency are required for the SVD. In the present paper, the performance of Belle SVD is reviewed. The upgrade plan for the SVD2, which is under construction and will be installed in summer 2002, is also presented.

  5. The CDF Silicon Vertex Detector

    Energy Technology Data Exchange (ETDEWEB)

    Tkaczyk, S.; Carter, H.; Flaugher, B. [and others

    1993-09-01

    A silicon strip vertex detector was designed, constructed and commissioned at the CDF experiment at the Tevatron collider at Fermilab. The mechanical design of the detector, its cooling and monitoring are presented. The front end electronics employing a custom VLSI chip, the readout electronics and various components of the SVX system are described. The system performance and the experience with the operation of the detector in the radiation environment are discussed. The device has been taking colliding beams data since May of 1992, performing at its best design specifications and enhancing the physics program of CDF.

  6. Untreated silicone breast implant rupture

    DEFF Research Database (Denmark)

    Hölmich, Lisbet R; Vejborg, Ilse M; Conrad, Carsten

    2004-01-01

    were evaluated. Comparisons were also made for self-reported breast symptoms occurring during the study period and for changes in serum values of antinuclear antibodies, rheumatoid factor, and cardiolipin antibodies immunoglobulin G and immunoglobulin M. The majority of the women with implant rupture...... that implant rupture is a relatively harmless condition, which only rarely progresses and gives rise to notable symptoms. Even so, because of a small risk of silicone spread, the authors suggest that women with implant ruptures be followed clinically, if not operated on. Because implant ruptures often occur...

  7. Silicon photonics for multicore fiber communication

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

  8. Broadband Nonlinear Signal Processing in Silicon Nanowires

    DEFF Research Database (Denmark)

    Yvind, Kresten; Pu, Minhao; Hvam, Jørn Märcher

    The fast non-linearity of silicon allows Tbit/s optical signal processing. By choosing suitable dimensions of silicon nanowires their dispersion can be tailored to ensure a high nonlinearity at power levels low enough to avoid significant two-photon abso We have fabricated low insertion...

  9. Case Report: Magnetically retained silicone facial prosthesis ...

    African Journals Online (AJOL)

    Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention. Key words: Magnet ...

  10. Optical spectroscopy of single silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Gruen, Mathias; Steinmetz, David; Becher, Christoph [Fachrichtung 7.3 (Technische Physik), Universitaet des Saarlandes, 66041 Saarbruecken (Germany); Miska, Patrice; Montaigne, F.; Rinnert, Herve; Vergnat, Michel [Laboratoire de Physique des Materiaux - UMR- CNRS 7556, Universite Henri Poincare Nancy I, Faculte des Sciences et Techniques, 54506 Vandoeuvre-les-Nancy (France)

    2007-07-01

    Silicon crystals with sizes of few nanometers embedded in a silica matrix show an improved quantum efficiency for optical emission in comparison with bulk silicon yielding an intense photoluminescence signal in the spectral region around 700-800 nm. This surprising property is attributed to the quantum confinement of excitons in these nanocrystals, also called ''silicon quantum dots''. Such nanostructures are promising candidates for the realization of photonic devices and quantum optics experiments. Although the properties of an ensemble of silicon nanocrystals are well known the optical properties of a single silicon quantum dot are still not well understood. Thus, the investigation of single silicon nanocrystals will contribute to the understanding of their intense photoluminescence. Isolating single silicon nanocrystals would also allow for their employment in quantum optics experiments. Here, we report on the fabrication of silicon nanocrystals with sizes of about 3 nm embedded in thin silica films. The samples show intense luminescence at 770-800 nm depending on fabrication parameters. We discuss the luminescence properties and strategies to experimentally isolate single nanocrystals.

  11. Selecting silicone tubing for device applications.

    Science.gov (United States)

    Jahn, D

    2005-10-01

    A number of factors are involved in selecting the most suitable silicone tubing for a given purpose. These include physical chemistry, performance properties, a supplier's quality system and regulatory compliance. This article provides a guide for device developers when selecting silicone tubing for their applications.

  12. Mechanism of single atom switch on silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Stokbro, Kurt; Thirstrup, C.

    1998-01-01

    We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias...

  13. Micromachined silicon plates for sensing molecular interactions

    NARCIS (Netherlands)

    Carlen, Edwin; Weinberg, M.S.; Dube, C.E.; Zapata, A.M.; Borenstein, J.T.

    2006-01-01

    A micromachined surface stress sensor based on a thin suspended crystalline silicon circular plate measures differential surface stress changes associated with vapor phase chemisorption of an alkanethiol self-assembled monolayer. The isolated face of the suspended silicon plate serves as the sensing

  14. SOI silicon on glass for optical MEMS

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Ravnkilde, Jan Tue; Hansen, Ole

    2003-01-01

    A newly developed fabrication method for fabrication of single crystalline Si (SCS) components on glass, utilizing Deep Reactive Ion Etching (DRIE) of a Silicon On Insulator (SOI) wafer is presented. The devices are packaged at wafer level in a glass-silicon-glass (GSG) stack by anodic bonding...

  15. Identification of a Mammalian Silicon Transporter

    NARCIS (Netherlands)

    Ratcliffe, Sarah; Jugdaohsingh, Ravin; Ma, Jian Feng; Mitani-Ueno, Nakimi; Vivancos, Julien; Deshmukh, Rupesh; Boekschoten, Mark; Muller, Michael; Mawhinney, Robert; Marron, Alan; Isenring, Paul; Kinrade, Stephen; Bélanger, Richard; Powell, Jonathan

    2017-01-01

    Silicon (Si) has long been known to play a major physiological role in certain organisms, including some sponges and many diatoms and higher plants, leading to the recent identification of multiple proteins responsible for silicon transport in a range of algal and plant species. In mammals, despite

  16. Silicon nanostructures produced by laser direct etching

    DEFF Research Database (Denmark)

    Müllenborn, Matthias; Dirac, Paul Andreas Holger; Petersen, Jon Wulff

    1995-01-01

    A laser direct-write process has been applied to structure silicon on a nanometer scale. In this process, a silicon substrate, placed in a chlorine ambience, is locally heated above its melting point by a continuous-wave laser and translated by high-resolution direct-current motor stages. Only...

  17. Silicon LEDs in FinFET technology

    NARCIS (Netherlands)

    Piccolo, G.; Kuindersma, P.I.; Ragnarsson, L-A.; Hueting, Raymond Josephus Engelbart; Collaert, N.; Schmitz, Jurriaan

    2014-01-01

    We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped

  18. Improved Jet-Mill Silicon Grinder

    Science.gov (United States)

    Collins, Earl R., Jr.

    1986-01-01

    Proposed refinement in jet-mill grinding of silicon reduces proportion of unusable, overly ground particles. Particles serve as seeds for growth of silicon from vapor. In new grinding apparatus, particle separator distinct from collision chamber. Particle collides only once before sorted for size. If proper size, extracted; if not, returned to chamber for another collision.

  19. Hydroxide catalysis bonding of silicon carbide

    NARCIS (Netherlands)

    Veggel, A.A. van; Ende, D.A. van den; Bogenstahl, J.; Rowan, S.; Cunningham, W.; Gubbels, G.H.M.; Nijmeijer, H.

    2008-01-01

    For bonding silicon carbide optics, which require extreme stability, hydroxide catalysis bonding is considered [Rowan, S., Hough, J. and Elliffe, E., Silicon carbide bonding. UK Patent 040 7953.9, 2004. Please contact Mr. D. Whiteford for further information: D.Whiteford@admin.gla.ac.uk]. This

  20. Simple Approach to Superamphiphobic Overhanging Silicon Nanostructures

    DEFF Research Database (Denmark)

    Kumar, Rajendra; Mogensen, Klaus Bo; Bøggild, Peter

    2010-01-01

    with contact angles up to 152 degrees and roll-off angle down to 8 degrees. Such nonlithographic nanoscale overhanging Structures can also be added to silicon nanograss by deposition of a thin SiO2 layer, which equips the silicon rods with 100-300 nm sized overhanging Structures. This is a simple, fast...

  1. Optical and microstructural investigations of porous silicon

    Indian Academy of Sciences (India)

    Raman scattering and photoluminescence (PL) measurements on (100) oriented -type crystalline silicon (-Si) and porous silicon (PS) samples were carried out. PS samples were prepared by anodic etching of -Si under the illumination of light for different etching times of 30, 60 and 90 min. Raman scattering from the ...

  2. The Expanded Owens Valley Solar Array

    Science.gov (United States)

    Gary, Dale E.; Hurford, G. J.; Nita, G. M.; White, S. M.; Tun, S. D.; Fleishman, G. D.; McTiernan, J. M.

    2011-05-01

    The Expanded Owens Valley Solar Array (EOVSA) is now under construction near Big Pine, CA as a solar-dedicated microwave imaging array operating in the frequency range 1-18 GHz. The solar science to be addressed focuses on the 3D structure of the solar corona (magnetic field, temperature and density), on the sudden release of energy and subsequent particle acceleration, transport and heating, and on space weather phenomena. The project will support the scientific community by providing open data access and software tools for analysis of the data, to exploit synergies with on-going solar research in other wavelengths. The New Jersey Institute of Technology (NJIT) is expanding OVSA from its previous complement of 7 antennas to a total of 15 by adding 8 new antennas, and will reinvest in the existing infrastructure by replacing the existing control systems, signal transmission, and signal processing with modern, far more capable and reliable systems based on new technology developed for the Frequency Agile Solar Radiotelescope (FASR). The project will be completed in time to provide solar-dedicated observations during the upcoming solar maximum in 2013 and beyond. We provide an update on current status and our preparations for exploiting the data through modeling and data analysis tools. This research is supported by NSF grants AST-0908344, and AGS-0961867 and NASA grant NNX10AF27G to New Jersey Institute of Technology.

  3. Calibrating Treasure Valley Groundwater Model using MODFLOW

    Science.gov (United States)

    Hernandez, J.; Tan, K.

    2016-12-01

    In Idaho, groundwater plays an especially important role in the state. According to the Idaho Department of Environmental Quality, groundwater supplies 95% of the state's drinking water (2011). The USGS estimates that Idaho withdraws 117 million cubic meters (95,000 acre-feet) per year from groundwater sources for domestic usage which includes drinking water. The same report from the USGS also estimates that Idaho withdraws 5,140 million cubic meters (4,170,000 acre-feet) per year from groundwater sources for irrigation usage. Quantifying and managing that resource and estimating groundwater levels in the future is important for a variety of socio-economic reasons. As the population within the Treasure Valley continues to grow, the demand of clean usable groundwater increases. The objective of this study was to develop and calibrate a groundwater model with the purpose of understanding short- and long-term effects of existing and alternative land use scenarios on groundwater changes. Hydrologic simulations were done using the MODFLOW-2000 model. The model was calibrated for predevelopment period by reproducing and comparing groundwater levels of the years before 1925 using steady state boundary conditions representing no change in the land use. Depending on the reliability of the groundwater source, the economic growth of the area can be constrained or allowed to flourish. Mismanagement of the groundwater source can impact its sustainability, quality and could hamper development by increasing operation and maintenance costs. Proper water management is critical because groundwater is such a limited resource.

  4. Fungal Biodiversity in the Alpine Tarfala Valley.

    Science.gov (United States)

    Coleine, Claudia; Selbmann, Laura; Ventura, Stefano; D'Acqui, Luigi Paolo; Onofri, Silvano; Zucconi, Laura

    2015-10-10

    Biological soil crusts (BSCs) are distributed worldwide in all semiarid and arid lands, where they play a determinant role in element cycling and soil development. Although much work has concentrated on BSC microbial communities, free-living fungi have been hitherto largely overlooked. The aim of this study was to examine the fungal biodiversity, by cultural-dependent and cultural-independent approaches, in thirteen samples of Arctic BSCs collected at different sites in the Alpine Tarfala Valley, located on the slopes of Kebnekaise, the highest mountain in northern Scandinavia. Isolated fungi were identified by both microscopic observation and molecular approaches. Data revealed that the fungal assemblage composition was homogeneous among the BSCs analyzed, with low biodiversity and the presence of a few dominant species; the majority of fungi isolated belonged to the Ascomycota, and Cryptococcus gilvescens and Pezoloma ericae were the most frequently-recorded species. Ecological considerations for the species involved and the implication of our findings for future fungal research in BSCs are put forward.

  5. Fungal Biodiversity in the Alpine Tarfala Valley

    Directory of Open Access Journals (Sweden)

    Claudia Coleine

    2015-10-01

    Full Text Available Biological soil crusts (BSCs are distributed worldwide in all semiarid and arid lands, where they play a determinant role in element cycling and soil development. Although much work has concentrated on BSC microbial communities, free-living fungi have been hitherto largely overlooked. The aim of this study was to examine the fungal biodiversity, by cultural-dependent and cultural-independent approaches, in thirteen samples of Arctic BSCs collected at different sites in the Alpine Tarfala Valley, located on the slopes of Kebnekaise, the highest mountain in northern Scandinavia. Isolated fungi were identified by both microscopic observation and molecular approaches. Data revealed that the fungal assemblage composition was homogeneous among the BSCs analyzed, with low biodiversity and the presence of a few dominant species; the majority of fungi isolated belonged to the Ascomycota, and Cryptococcus gilvescens and Pezoloma ericae were the most frequently-recorded species. Ecological considerations for the species involved and the implication of our findings for future fungal research in BSCs are put forward.

  6. Tennessee Valley Region: a year 2000 profile

    Energy Technology Data Exchange (ETDEWEB)

    None

    1978-06-01

    A study was undertaken to determine the potential radiological implications of nuclear facilities in the combined watersheds of the Tennessee and Cumberland rivers, an area covering portions of 7 states of varied topography. The regional population in 1970 was about 4.6 million and is expected to increase to about 7 million by the year 2000. A 1973 projection estimated the installed electric generating capacity of the region to increase from a 1970 value of 45,000 megawatts to a total of 222,000 megawatts by the year 2000. In that year, about 144,000 megawatts were projected to be nuclear plants. The profile of the Tennessee Valley Region in the year 2000, as drawn from this report, contains the essential data for calculation of the radiological dose from operation of nuclear facilities in that year. Those calculations are reported in the companion document, DOE/ET-0064/2. Specifically, Volume I establishes the parameters describing where the people live, what they eat, the activities in which they engage, and the environmental surroundings that enable an evaluation of the potential radiation dose to the population. Airborne radionuclides from nuclear facilities in this zone may enter the study area and be deposited on the ground, on growing food, and on water surfaces. Consideration was not given to waterborne radionuclides external to the study region. 17 references. (MCW)

  7. Soil formation in the Tsauchab Valley, Namibia

    Science.gov (United States)

    Eden, Marie; Bens, Oliver; Ramisch, Arne; Schwindt, Daniel; Völkel, Jörg

    2016-04-01

    The BMBF-funded project GeoArchives (Spaces) investigates soils and sediments in Southern Africa. A focus area lies on the Tsauchab Valley (Namibia), South of the Naukluft mountain range (24°26'40'' S, 16°10'40'' E). On a gently sloping alluvial fan facing East towards the river, the surface is characterized by a desert pavement covering soils used as farmland. The landscape units were mapped and the area at the lower slope of a hill was divided into three units: a rinsing surface and a gravel plain, separated by a channel. On these surfaces soil profiles were excavated. Profile description followed the German system (Bodenkundliche Kartieranleitung KA 5) and disturbed samples were taken at various depths and analysed in the lab. Undisturbed soil cores with a volume of 100 cm³ were taken just below the surface at a depth of ~1-6 cm. Lab analyses included texture and gravel content, colour, pH, electrical conductivity, carbonates, CNS, cation exchange capacity, pedogenic oxides, main and trace elements (XRF), and clay mineral distribution (XRD). Undisturbed samples were used to determine soil water retention curve, air permeability and bulk density. The profiles revealed moderately developed cambic soils rich in clay minerals and with total carbon contents ranging up to 1.8 %, bearing shrubs and after episodic rainfall a dense grass vegetation. Their genesis is discussed and interpreted in the context of the landscape and climate history of this semi-desert environment.

  8. Fabricating solar cells with silicon nanoparticles

    Science.gov (United States)

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  9. Hysteroscopic tubal occlusion with silicone rubber.

    Science.gov (United States)

    Reed, T P; Erb, R

    1983-03-01

    A new method of sterilization for women is being investigated in several outpatient centers. The technique involves flowing liquid silicone rubber into the fallopian tubes. The silicone cures in place and forms a rubbery solid plug. The catalyzed liquid silicone is pumped through a special polysulfone guide assembly that fits through the operating channel of a standard hysteroscope. On the end of the guide is a hollow premolded silicone rubber tip that fits into the cornual ostium of the tube. When the silicone cures it also cross-links to this tip so that the tip becomes part of the plug. Results as of April 1, 1982, from 350 women in the Philadelphia center suggest that proper plug formation prevents pregnancy and that the method can be applied to about 85% of properly selected women.

  10. Silicon photonics and challenges for fabrication

    Science.gov (United States)

    Feilchenfeld, N. B.; Nummy, K.; Barwicz, T.; Gill, D.; Kiewra, E.; Leidy, R.; Orcutt, J. S.; Rosenberg, J.; Stricker, A. D.; Whiting, C.; Ayala, J.; Cucci, B.; Dang, D.; Doan, T.; Ghosal, M.; Khater, M.; McLean, K.; Porth, B.; Sowinski, Z.; Willets, C.; Xiong, C.; Yu, C.; Yum, S.; Giewont, K.; Green, W. M. J.

    2017-03-01

    Silicon photonics is rapidly becoming the key enabler for meeting the future data speed and volume required by the Internet of Things. A stable manufacturing process is needed to deliver cost and yield expectations to the technology marketplace. We present the key challenges and technical results from both 200mm and 300mm facilities for a silicon photonics fabrication process which includes monolithic integration with CMOS. This includes waveguide patterning, optical proximity correction for photonic devices, silicon thickness uniformity and thick material patterning for passive fiber to waveguide alignment. The device and process metrics show that the transfer of the silicon photonics process from 200mm to 300mm will provide a stable high volume manufacturing platform for silicon photonics designs.

  11. Silicon quantum dots for biological applications.

    Science.gov (United States)

    Chinnathambi, Shanmugavel; Chen, Song; Ganesan, Singaravelu; Hanagata, Nobutaka

    2014-01-01

    Semiconductor nanoparticles (or quantum dots, QDs) exhibit unique optical and electronic properties such as size-controlled fluorescence, high quantum yields, and stability against photobleaching. These properties allow QDs to be used as optical labels for multiplexed imaging and in drug delivery detection systems. Luminescent silicon QDs and surface-modified silicon QDs have also been developed as potential minimally toxic fluorescent probes for bioapplications. Silicon, a well-known power electronic semiconductor material, is considered an extremely biocompatible material, in particular with respect to blood. This review article summarizes existing knowledge related to and recent research progress made in the methods for synthesizing silicon QDs, as well as their optical properties and surface-modification processes. In addition, drug delivery systems and in vitro and in vivo imaging applications that use silicon QDs are also discussed. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Silicon nanostructures for cancer diagnosis and therapy.

    Science.gov (United States)

    Peng, Fei; Cao, Zhaohui; Ji, Xiaoyuan; Chu, Binbin; Su, Yuanyuan; He, Yao

    2015-01-01

    The emergence of nanotechnology suggests new and exciting opportunities for early diagnosis and therapy of cancer. During the recent years, silicon-based nanomaterials featuring unique properties have received great attention, showing high promise for myriad biological and biomedical applications. In this review, we will particularly summarize latest representative achievements on the development of silicon nanostructures as a powerful platform for cancer early diagnosis and therapy. First, we introduce the silicon nanomaterial-based biosensors for detecting cancer markers (e.g., proteins, tumor-suppressor genes and telomerase activity, among others) with high sensitivity and selectivity under molecular level. Then, we summarize in vitro and in vivo applications of silicon nanostructures as efficient nanoagents for cancer therapy. Finally, we discuss the future perspective of silicon nanostructures for cancer diagnosis and therapy.

  13. Roll up nanowire battery from silicon chips.

    Science.gov (United States)

    Vlad, Alexandru; Reddy, Arava Leela Mohana; Ajayan, Anakha; Singh, Neelam; Gohy, Jean-François; Melinte, Sorin; Ajayan, Pulickel M

    2012-09-18

    Here we report an approach to roll out Li-ion battery components from silicon chips by a continuous and repeatable etch-infiltrate-peel cycle. Vertically aligned silicon nanowires etched from recycled silicon wafers are captured in a polymer matrix that operates as Li(+) gel-electrolyte and electrode separator and peeled off to make multiple battery devices out of a single wafer. Porous, electrically interconnected copper nanoshells are conformally deposited around the silicon nanowires to stabilize the electrodes over extended cycles and provide efficient current collection. Using the above developed process we demonstrate an operational full cell 3.4 V lithium-polymer silicon nanowire (LIPOSIL) battery which is mechanically flexible and scalable to large dimensions.

  14. The Role of Source Material in Basin Sedimentation, as Illustrated within Eureka Valley, Death Valley National Park, CA.

    Science.gov (United States)

    Lawson, M. J.; Yin, A.; Rhodes, E. J.

    2015-12-01

    Steep landscapes are known to provide sediment to sink regions, but often petrological factors can dominate basin sedimentation. Within Eureka Valley, in northwestern Death Valley National Park, normal faulting has exposed a steep cliff face on the western margin of the Last Chance range with four kilometers of vertical relief from the valley floor and an angle of repose of nearly 38 degrees. The cliff face is composed of Cambrian limestone and dolomite, including the Bonanza King, Carrara and Wood Canyon formations. Interacting with local normal faulting, these units preferentially break off the cliff face in coherent blocks, which result in landslide deposits rather than as finer grained material found within the basin. The valley is well known for a large sand dune, which derives its sediment from distal sources to the north, instead of from the adjacent Last Chance Range cliff face. During the Holocene, sediment is sourced primary from the northerly Willow Wash and Cucomungo canyon, a relatively small drainage (less than 80 km2) within the Sylvan Mountains. Within this drainage, the Jurassic quartz monzonite of Beer Creek is heavily fractured due to motion of the Fish Valley Lake - Death Valley fault zone. Thus, the quartz monzonite is more easily eroded than the well-consolidated limestone and dolomite that forms the Last Change Range cliff face. As well, the resultant eroded material is smaller grained, and thus more easily transported than the limestone. Consequently, this work highlights an excellent example of the strong influence that source material can have on basin sedimentation.

  15. Agricultural Development, Land Change, and Livelihoods in Tanzania's Kilombero Valley

    Science.gov (United States)

    Connors, John Patrick

    The Kilombero Valley lies at the intersection of a network of protected areas that cross Tanzania. The wetlands and woodlands of the Valley, as well as the forest of surrounding mountains are abundant in biodiversity and are considered to be critical areas for conservation. This area, however, is also the home to more than a half million people, primarily poor smallholder farmers. In an effort to support the livelihoods and food security of these farmers and the larger Tanzanian population, the country has recently targeted a series of programs to increase agricultural production in the Kilombero Valley and elsewhere in the country. Bridging concepts and methods from land change science, political ecology, and sustainable livelihoods, I present an integrated assessment of the linkages between development and conservation efforts in the Kilombero Valley and the implications for food security. This dissertation uses three empirical studies to understand the process of development in the Kilombero Valley and to link the priorities and perceptions of conservation and development efforts to the material outcomes in food security and land change. The first paper of this dissertation examines the changes in land use in the Kilombero Valley between 1997 and 2014 following the privatization of agriculture and the expansion of Tanzania's Kilimo Kwanza program. Remote sensing analysis reveals a two-fold increase in agricultural area during this short time, largely at the expense of forest. Protected areas in some parts of the Valley appear to be deterring deforestation, but rapid agricultural growth, particularly surrounding a commercial rice plantation, has led to loss of extant forest and sustained habitat fragmentation. The second paper focuses examines livelihood strategies in the Valley and claims regarding the role of agrobiodiversity in food security. The results of household survey reveal no difference or lower food security among households that diversify their

  16. Micromachined silicon seismic accelerometer development

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Montague, S. [and others

    1996-08-01

    Batch-fabricated silicon seismic transducers could revolutionize the discipline of seismic monitoring by providing inexpensive, easily deployable sensor arrays. Our ultimate goal is to fabricate seismic sensors with sensitivity and noise performance comparable to short-period seismometers in common use. We expect several phases of development will be required to accomplish that level of performance. Traditional silicon micromachining techniques are not ideally suited to the simultaneous fabrication of a large proof mass and soft suspension, such as one needs to achieve the extreme sensitivities required for seismic measurements. We have therefore developed a novel {open_quotes}mold{close_quotes} micromachining technology that promises to make larger proof masses (in the 1-10 mg range) possible. We have successfully integrated this micromolding capability with our surface-micromachining process, which enables the formation of soft suspension springs. Our calculations indicate that devices made in this new integrated technology will resolve down to at least sub-{mu}G signals, and may even approach the 10{sup -10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  17. Vacuum silicon photomultipliers: Recent developments

    Energy Technology Data Exchange (ETDEWEB)

    Barbarino, Giancarlo [Dipartimento Scienze Fisiche, Università “Federico II” Napoli (Italy); INFN Napoli (Italy); Barbato, Felicia Carla Tiziana [INFN Napoli (Italy); Campajola, Luigi [Dipartimento Scienze Fisiche, Università “Federico II” Napoli (Italy); Asmundis, Riccardo de [INFN Napoli (Italy); De Rosa, Gianfranca [Dipartimento Scienze Fisiche, Università “Federico II” Napoli (Italy); Mollo, Carlos Maximiliano [INFN Napoli (Italy); Vivolo, Daniele, E-mail: vivolo@na.infn.it [Dipartimento Scienze Fisiche, Università “Federico II” Napoli (Italy); INFN Napoli (Italy)

    2013-08-01

    VSiPMT (Vacuum Silicon PhotoMultiplier Tube) is an innovative design for a modern hybrid, high gain, silicon based photodetector based on the combination of a SiPM with a hemispherical vacuum glass PMT standard envelope. In such a device photoelectrons emitted by the photocathode are accelerated and focused by an electric field towards a small focal area covered by the SiPM which therefore acts as an amplifier, thus substituting the classical dynode chain of a PMT. With a view to the realization of a first prototype of VSiPMT our group is carrying out a preliminary work aimed at the study of SiPM performances as an electron detector, including an accurate Geant4-based simulation of the interaction between SiPM and electron beams. In order to perform a full characterization of the SiPM we developed an experimental setup for the extraction and the acceleration of a beam of backward secondary electrons emitted after the bombardment of a carbon foil by a proton beam extracted in a TTT-3 accelerator.

  18. Silicon transporters in higher plants.

    Science.gov (United States)

    Ma, Jian Feng

    2010-01-01

    Silicon (Si) is the second most abundant element in the Earth's crust and exerts beneficial effects on plant growth and production by alleviating both biotic and abiotic stresses including diseases, pests, lodging, drought and nutrient imbalance. Silicon is taken up by the roots in the form ofsilicic acid, a noncharged molecule. Recently both influx (Lsil) and efflux (Lsi2) transporters for silicic acid have been identified in gramineous plants including rice, barley and maize. Lsil and its homologs are influx Si transporters, which belong to a Nod26-like major intrinsic protein (NIP) subfamily in the aquaporin protein family. They are responsible for the transport of Si from the external solution to the root cells. On the other hand, Lsi2 and its homologs are efflux Si transporters, belonging to putative anion transporters and are responsible for the transport of Si out of the cells toward the xylem. All influx transporters show polar localization at the distal side. Among efflux transporters, Lsi2 in rice shows polar localization at the proximal side, but that in barley and maize does not show polar localization. The cell-specificity of localization of Si transporters and expression patterns are different between species. Rice Si transporters are also permeable to arsenite.

  19. Phonon conduction in silicon nanobeams

    Science.gov (United States)

    Park, Woosung; Shin, Dongsuk D.; Kim, Soo Jin; Katz, Joseph S.; Park, Joonsuk; Ahn, Chae Hyuck; Kodama, Takashi; Asheghi, Mehdi; Kenny, Thomas W.; Goodson, Kenneth E.

    2017-05-01

    Despite extensive studies on thermal transport in thin silicon films, there has been little work studying the thermal conductivity of single-crystal rectangular, cross-sectional nanobeams that are commonly used in many applications such as nanoelectronics (FinFETs), nano-electromechanical systems, and nanophotonics. Here, we report experimental data on the thermal conductivity of silicon nanobeams of a thickness of ˜78 nm and widths of ˜65 nm, 170 nm, 270 nm, 470 nm, and 970 nm. The experimental data agree well (within ˜9%) with the predictions of a thermal conductivity model that uses a combination of bulk mean free paths obtained from ab initio calculations and a suppression function derived from the kinetic theory. This work quantifies the impact of nanobeam aspect ratios on thermal transport and establishes a criterion to differentiate between thin films and beams in studying thermal transport. The thermal conductivity of a 78 nm × 65 nm nanobeam is ˜32 W m-1 K-1, which is roughly a factor of two smaller than that of a 78 nm thick film.

  20. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  1. Low cost silicon solar array project large area silicon sheet task: Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

    1977-01-01

    Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

  2. Hysteroscopic sterilization: silicone elastic plugs.

    Science.gov (United States)

    Reed, T P

    1983-06-01

    Erb, Davis, and Kyriazis developed the application of the silicone rubber plug directly into the cornual openings of the fallopian tubes in rabbits by working through hysterotomies. Subsequently, does were exposed to bucks for periods up to 280 days, and none of the does became pregnant. Tissue sections of some tubes were studied microscopically, and no pathological findings were found. The only finding was the flattening of the cilia. This work continued through the early 1970s at Franklin Research Center and Hahnemann Medical College in Philadelphia. 2 basic concepts were developed: 1) there was direct application of catalyzed silicone rubber into the cornual ostium, and 2) the molded obturator (cornual) tip became part of the plug. The technique's success depends on the fact that silicone rubber cures (becomes a rubbery solid) in about 5 minutes without heat or chemical reaction. The formed-in-place plug is made possible because the silicone rubber in curing will cross-link to itself only with the result that the obturator tip at the cornu cross-links and becomes part of the formed-in-place plug. The procedure, as performed in humans, is outlined in detail and is diagrammed. A single hinged bivalve speculum exposes the cervix so that after the hysteroscope is inserted through the cervix into the uterine cavity, the speculum can be removed. The procedure should be performed early in the proliferative phase of the cycle, for generally visualization is better at this time because the endometrium is thinner and less vascular and succulent. Once the ostia have been identified, the aspirator is removed from the cavity. The guide assembly with its attached obturator tip is introduced through the opening channel of the scope into the uterine cavity. Once bilateral good push tests have been obtained, the assistant adds catalyst (stanous octuate) to the silicone in the nonairentraining mixer and dispenser that has been taken from the freezer. Once curing is complete, the

  3. Synthesis of colloidal solutions with silicon nanocrystals from porous silicon.

    Science.gov (United States)

    Luna López, José Alberto; Garzón Román, Abel; Gómez Barojas, Estela; Gracia, Jf Flores; Martínez Juárez, Javier; Carrillo López, Jesús

    2014-01-01

    In this work, we have obtained colloidal solutions of Si nanocrystals (Si-ncs), starting from free-standing porous silicon (PSi) layers. PSi layers were synthesized using a two-electrode Teflon electrochemical cell; the etching solution contained hydrogen peroxide 30%, hydrofluoric acid 40% (HF), and methanol. The anodizing current density was varied to 250 mA cm(-2), 1 A cm(-2), and 1.2 A cm(-2). Thus obtained, PSi was mechanically pulverized in a mortar agate; then, the PSi powders were poured into different solutions to get the final Si-ncs colloidal solutions. The different optical, morphological, and structural characteristics of the colloidal solutions with Si-ncs were measured and studied. These Si-ncs colloidal solutions, measured by photoluminescence (PL), revealed efficient blue-green or violet emission intensities. The results of X-ray diffraction (XRD) indicate that the colloidal solutions are mainly composed of silicon nanocrystallites. The result of UV-vis transmittance indicates that the optical bandgap energies of the colloidal solutions varied from 2.3 to 3.5 eV for colloids prepared in methanol, ethanol, and acetone. The transmission electron microscopy (TEM) images showed the size of the nanocrystals in the colloidal solutions. Fourier transform infrared spectroscopy (FTIR) spectra showed different types of chemical bonds such as Si-O-Si, Si-CH2, and SiH x , as well as some kind of defects. 61.46Df.-a; 61.43.Gt; 61.05.cp; 78.55.-m; 81.15.Gh.

  4. Lung cancer in the Kashmir valley

    Directory of Open Access Journals (Sweden)

    Koul Parvaiz

    2010-01-01

    Full Text Available Background: Lung cancer has been found to be the second commonest cancer according to a hospital-based data from Kashmir, India. However, no incidence studies are available. Objective: To ascertain the incidence of lung cancer in Kashmir. Materials and Methods: All newly histologically diagnosed cases of lung cancer seen in various hospital and private laboratories of the Kashmir valley were registered over a period of two years (January 1, 2004 to December 31, 2005. Also included were patients attending the various oncological service areas of the institute and those diagnosed from any other laboratory outside the state. The incidence rate was calculated using the January 2005 population as the reference population estimated using the census-based projected populations. Results: Four hundred and sixty-two incident cases of lung cancer were seen during the study period. The crude incidence rate, age standardized (world and truncated age adjusted (40-69 years, world incidence rates for lung cancer per 100 000 population were 4.01, 6.48 and 15.28 respectively (males 6.55, 10.09 and 23.94 respectively and females 1.19, 2.14 and 4.65. The age adjusted rates for males in district Srinagar was 19.34 per 100 000. One hundred and fifty nine (69.8% of the 221 had a history of Hukkah smoking. Conclusions: Even though Kashmir as a whole is a low incidence area for lung cancer (ASR of < 15, Srinagar district has the highest incidence of lung cancer among the males in Kashmir. The data presented is assumed to be the closest approximation to a population-based data registry and the geographical incidence maps of ICMR need appropriate updating

  5. The Evaporation Valley in the Kepler Planets

    Science.gov (United States)

    Owen, James E.; Wu, Yanqin

    2017-09-01

    A new piece of evidence supporting the photoevaporation-driven evolution model for low-mass, close-in exoplanets was recently presented by the California-Kepler Survey. The radius distribution of the Kepler planets is shown to be bimodal, with a “valley” separating two peaks at 1.3 and 2.6 R ⊕. Such an “evaporation valley” had been predicted by numerical models previously. Here, we develop a minimal model to demonstrate that this valley results from the following fact: the timescale for envelope erosion is the longest for those planets with hydrogen/helium-rich envelopes that, while only a few percent in weight, double its radius. The timescale falls for envelopes lighter than this because the planet’s radius remains largely constant for tenuous envelopes. The timescale also drops for heavier envelopes because the planet swells up faster than the addition of envelope mass. Photoevaporation therefore herds planets into either bare cores (˜1.3 R ⊕), or those with double the core’s radius (˜2.6 R ⊕). This process mostly occurs during the first 100 Myr when the stars’ high-energy fluxes are high and nearly constant. The observed radius distribution further requires the Kepler planets to be clustered around 3 M ⊕ in mass, born with H/He envelopes more than a few percent in mass, and that their cores are similar to the Earth in composition. Such envelopes must have been accreted before the dispersal of the gas disks, while the core composition indicates formation inside the ice line. Lastly, the photoevaporation model fails to account for bare planets beyond ˜30-60 days; if these planets are abundant, they may point to a significant second channel for planet formation, resembling the solar system terrestrial planets.

  6. Lifetime of Nano-Structured Black Silicon for Photovoltaic Applications

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

    2016-01-01

    In this work, we present recent results of lifetime optimization for nano-structured black silicon and its photovoltaic applications. Black silicon nano-structures provide significant reduction of silicon surface reflection due to highly corrugated nanostructures with excellent light trapping......, respectively. This is promising for use of black silicon RIE nano-structuring in a solar cell process flow...

  7. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

    2011-01-01

    results on bonding of thin and thick Si3N4 layers. The new results include high temperature bonding without any pretreatment, along with improved bonding ability achieved by thermal oxidation and chemical pretreatment. The bonded wafers include both unprocessed and processed wafers with a total silicon......While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...... specific. Often fusion bonding of silicon nitride surfaces to silicon or silicon dioxide to silicon surfaces is preferred, though Si3N4–Si3N4 bonding is indeed possible and practical for many devices as will be shown in this paper. We present an overview of existing knowledge on Si3N4–Si3N4 bonding and new...

  8. Silicon Micro- and Nanofabrication for Medicine

    Science.gov (United States)

    Fine, Daniel; Goodall, Randy; Bansal, Shyam S.; Chiappini, Ciro; Hosali, Sharath; van de Ven, Anne L.; Srinivasan, Srimeenkashi; Liu, Xuewu; Godin, Biana; Brousseau, Louis; Yazdi, Iman K.; Fernandez-Moure, Joseph; Tasciotti, Ennio; Wu, Hung-Jen; Hu, Ye; Klemm, Steve; Ferrari, Mauro

    2013-01-01

    This manuscript constitutes a review of several innovative biomedical technologies fabricated using the precision and accuracy of silicon micro- and nanofabrication. The technologies to be reviewed are subcutaneous nanochannel drug delivery implants for the continuous tunable zero-order release of therapeutics, multi-stage logic embedded vectors for the targeted systemic distribution of both therapeutic and imaging contrast agents, silicon and porous silicon nanowires for investigating cellular interactions and processes as well as for molecular and drug delivery applications, porous silicon (pSi) as inclusions into biocomposites for tissue engineering, especially as it applies to bone repair and regrowth, and porous silica chips for proteomic profiling. In the case of the biocomposites, the specifically designed pSi inclusions not only add to the structural robustness, but can also promote tissue and bone regrowth, fight infection, and reduce pain by releasing stimulating factors and other therapeutic agents stored within their porous network. The common material thread throughout all of these constructs, silicon and its associated dielectrics (silicon dioxide, silicon nitride, etc.), can be precisely and accurately machined using the same scalable micro- and nanofabrication protocols that are ubiquitous within the semiconductor industry. These techniques lend themselves to the high throughput production of exquisitely defined and monodispersed nanoscale features that should eliminate architectural randomness as a source of experimental variation thereby potentially leading to more rapid clinical translation. PMID:23584841

  9. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  10. Porous silicon technology for integrated microsystems

    Science.gov (United States)

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  11. West Valley facility spent fuel handling, storage, and shipping experience

    Energy Technology Data Exchange (ETDEWEB)

    Bailey, W.J.

    1990-11-01

    The result of a study on handling and shipping experience with spent fuel are described in this report. The study was performed by Pacific Northwest Laboratory (PNL) and was jointly sponsored by the US Department of Energy (DOE) and the Electric Power Research Institute (EPRI). The purpose of the study was to document the experience with handling and shipping of relatively old light-water reactor (LWR) fuel that has been in pool storage at the West Valley facility, which is at the Western New York Nuclear Service Center at West Valley, New York and operated by DOE. A subject of particular interest in the study was the behavior of corrosion product deposits (i.e., crud) deposits on spent LWR fuel after long-term pool storage; some evidence of crud loosening has been observed with fuel that was stored for extended periods at the West Valley facility and at other sites. Conclusions associated with the experience to date with old spent fuel that has been stored at the West Valley facility are presented. The conclusions are drawn from these subject areas: a general overview of the West Valley experience, handling of spent fuel, storing of spent fuel, rod consolidation, shipping of spent fuel, crud loosening, and visual inspection. A list of recommendations is provided. 61 refs., 4 figs., 5 tabs.

  12. Effects of valley meteorology on forest pesticide spraying

    Energy Technology Data Exchange (ETDEWEB)

    Whiteman, C.D.

    1990-04-01

    Pacific Northwest Laboratory conducted this study for the Missoula Technology and Development Center of the US Department of Agriculture's Forest Service. The purpose of the study was to summarize recent research on valley meteorology during the morning transition period and to qualitatively evaluate the effects of the evolution of valley temperature inversions and wind systems on the aerial spraying of pesticides in National Forest areas of the western United States. Aerial spraying of pesticides and herbicides in forests of the western United States is usually accomplished in the morning hour after first light, during the period known to meteorologists as the morning transition period.'' This document describes the key physical processes that occur during the morning transition period on undisturbed days and the qualitative effects of these processes on the conduct of aerial spraying operations. Since the timing of valley meteorological events may be strongly influenced by conditions that are external to the valley, such as strong upper-level winds or the influence of clouds on the receipt of solar energy in the valley, some remarks are made on the qualitative influence of these processes. Section 4 of this report suggests ways to quantify some of the physical processes to provide useful guidance for the planning and conduct of spraying operations. 12 refs., 9 figs.

  13. Biofunctionalization of silicone rubber with microgroove-patterned surface and carbon-ion implantation to enhance biocompatibility and reduce capsule formation.

    Science.gov (United States)

    Lei, Ze-Yuan; Liu, Ting; Li, Wei-Juan; Shi, Xiao-Hua; Fan, Dong-Li

    Silicone rubber implants have been widely used to repair soft tissue defects and deformities. However, poor biocompatibility can elicit capsule formation, usually resulting in prosthesis contracture and displacement in long-term usage. To overcome this problem, this study investigated the properties of silicone rubber materials with or without a microgroove-patterned surface and with or without carbon (C)-ion implantation. Atomic force microscopy, X-ray photoelectron spectroscopy, and a water contact angle test were used to characterize surface morphology and physicochemical properties. Cytocompatibility was investigated by a cell adhesion experiment, immunofluorescence staining, a Cell Counting Kit-8 assay, and scanning electron microscopy in vitro. Histocompatibility was evaluated by studying the inflammatory response and fiber capsule formation that developed after subcutaneous implantation in rats for 7 days, 15 days, and 30 days in vivo. Parallel microgrooves were found on the surfaces of patterned silicone rubber (P-SR) and patterned C-ion-implanted silicone rubber (PC-SR). Irregular larger peaks and deeper valleys were present on the surface of silicone rubber implanted with C ions (C-SR). The silicone rubber surfaces with microgroove patterns had stable physical and chemical properties and exhibited moderate hydrophobicity. PC-SR exhibited moderately increased dermal fibroblast cell adhesion and growth, and its surface microstructure promoted orderly cell growth. Histocompatibility experiments on animals showed that both the anti-inflammatory and antifibrosis properties of PC-SR were slightly better than those of the other materials, and there was also a lower capsular contracture rate and less collagen deposition around implants made from PC-SR. Although the surface chemical properties, dermal fibroblast cell growth, and cell adhesion were not changed by microgroove pattern modification, a more orderly cell arrangement was obtained, leading to enhanced

  14. Mollusca, Hirudinea, and Amphibia biogeography and paleobiology in Tule Valley and adjacent regions of Bonneville Basin, western USA [draft

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Mollusk, leeches (Hirudinea), and amphibian distribution are described for Tule Valley and adjacent Snake Valley and Fish Springs Flat, Tule Valley aquatic resources...

  15. Silicon Heterojunction System Field Performance

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, Dirk C.; Deline, Chris; Johnston, Steve; Rummel, Steve R.; Sekulic, Bill; Hacke, Peter; Kurtz, Sarah R.; Davis, Kristopher O.; Schneller, Eric John; Sun, Xingshu; Alam, Muhammad A.; Sinton, Ronald A.

    2017-11-17

    A silicon heterostructure photovoltaic system fielded for 10 years has been investigated in detail. The system has shown degradation, but at a rate similar to an average Si system, and still within the module warranty level. The power decline is dominated by a nonlinear Voc loss rather than more typical changes in Isc or Fill Factor. Modules have been evaluated using multiple techniques including: dark and light I-V measurement, Suns-Voc, thermal imaging, and quantitative electroluminescence. All techniques indicate that recombination and series resistance in the cells have increased along with a decrease of factor 2 in minority carrier lifetime. Performance changes are fairly uniform across the module, indicating changes occur primarily within the cells.

  16. Germanium silicon physics and materials

    CERN Document Server

    Willardson, R K; Bean, John C; Hull, Robert

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  17. Silicon in plant disease control

    Directory of Open Access Journals (Sweden)

    Edson Ampélio Pozza

    2015-06-01

    Full Text Available All essential nutrients can affect the incidence and severity of plant diseases. Although silicon (Si is not considered as an essential nutrient for plants, it stands out for its potential to decrease disease intensity in many crops. The mechanism of Si action in plant resistance is still unclear. Si deposition in plant cell walls raised the hypothesis of a possible physical barrier to pathogen penetration. However, the increased activity of phenolic compounds, polyphenol oxidases and peroxidases in plants treated with Si demonstrates the involvement of this element in the induction of plant defense responses. The studies examined in this review address the role of Si in disease control and the possible mechanisms involved in the mode of Si action in disease resistance in plants.

  18. Silicon nanomembranes for fingertip electronics

    Science.gov (United States)

    Ying, Ming; Bonifas, Andrew P.; Lu, Nanshu; Su, Yewang; Li, Rui; Cheng, Huanyu; Ameen, Abid; Huang, Yonggang; Rogers, John A.

    2012-08-01

    We describe the use of semiconductor nanomaterials, advanced fabrication methods and unusual device designs for a class of electronics capable of integration onto the inner and outer surfaces of thin, elastomeric sheets in closed-tube geometries, specially formed for mounting on the fingertips. Multifunctional systems of this type allow electrotactile stimulation with electrode arrays multiplexed using silicon nanomembrane (Si NM) diodes, high-sensitivity strain monitoring with Si NM gauges, and tactile sensing with elastomeric capacitors. Analytical calculations and finite element modeling of the mechanics quantitatively capture the key behaviors during fabrication/assembly, mounting and use. The results provide design guidelines that highlight the importance of the NM geometry in achieving the required mechanical properties. This type of technology could be used in applications ranging from human-machine interfaces to ‘instrumented’ surgical gloves and many others.

  19. Schematic driven silicon photonics design

    Science.gov (United States)

    Chrostowski, Lukas; Lu, Zeqin; Flückiger, Jonas; Pond, James; Klein, Jackson; Wang, Xu; Li, Sarah; Tai, Wei; Hsu, En Yao; Kim, Chan; Ferguson, John; Cone, Chris

    2016-03-01

    Electronic circuit designers commonly start their design process with a schematic, namely an abstract representation of the physical circuit. In integrated photonics on the other hand, it is very common for the design to begin at the physical component level. In order to build large integrated photonic systems, it is crucial to design using a schematic-driven approach. This includes simulations based on schematics, schematic-driven layout, layout versus schematic verification, and post-layout simulations. This paper describes such a design framework implemented using Mentor Graphics and Lumerical Solutions design tools. In addition, we describe challenges in silicon photonics related to manufacturing, and how these can be taken into account in simulations and how these impact circuit performance.

  20. Visualizing a silicon quantum computer

    Science.gov (United States)

    Sanders, Barry C.; Hollenberg, Lloyd C. L.; Edmundson, Darran; Edmundson, Andrew

    2008-12-01

    Quantum computation is a fast-growing, multi-disciplinary research field. The purpose of a quantum computer is to execute quantum algorithms that efficiently solve computational problems intractable within the existing paradigm of 'classical' computing built on bits and Boolean gates. While collaboration between computer scientists, physicists, chemists, engineers, mathematicians and others is essential to the project's success, traditional disciplinary boundaries can hinder progress and make communicating the aims of quantum computing and future technologies difficult. We have developed a four minute animation as a tool for representing, understanding and communicating a silicon-based solid-state quantum computer to a variety of audiences, either as a stand-alone animation to be used by expert presenters or embedded into a longer movie as short animated sequences. The paper includes a generally applicable recipe for successful scientific animation production.