WorldWideScience

Sample records for silicon valley laboratory

  1. Meie mees Silicon Valleys / Kertu Ruus

    Index Scriptorium Estoniae

    Ruus, Kertu, 1977-

    2007-01-01

    Ilmunud ka: Delovõje Vedomosti 5. dets. lk. 4. Peaminister Andrus Ansip avas Eesti Ettevõtluse Sihtasutuse esinduse Silicon Valley pealinnas San Joses. Vt. samas: Ränioru kliima on tehnoloogiasõbralik; Andrus Viirg

  2. Meie ingel Silicon Valleys / Raigo Neudorf

    Index Scriptorium Estoniae

    Neudorf, Raigo

    2008-01-01

    Ettevõtluse Arendamise Sihtasutuse esinduse töölepanekust USAs Silicon Valleys räägib esinduse juht Andrus Viirg. Vt. ka: Eestlasi leidub San Franciscos omajagu; Muljetavaldav karjäär; USAga ammune tuttav

  3. Solar energy innovation and Silicon Valley

    Science.gov (United States)

    Kammen, Daniel M.

    2015-03-01

    The growth of the U. S. and global solar energy industry depends on a strong relationship between science and engineering innovation, manufacturing, and cycles of policy design and advancement. The mixture of the academic and industrial engine of innovation that is Silicon Valley, and the strong suite of environmental policies for which California is a leader work together to both drive the solar energy industry, and keep Silicon Valley competitive as China, Europe and other area of solar energy strength continue to build their clean energy sectors.

  4. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  5. Israeli Infotech Migrants in Silicon Valley

    Directory of Open Access Journals (Sweden)

    Steven J. Gold

    2018-01-01

    Full Text Available Prior to the 1980s, Israel’s national ideology discouraged emigration and entrepreneurship among its citizens. Yet, by the late 1990s, Israeli emigrants were one of the leading immigrant nationalities in Silicon Valley. Drawing on interviews, fieldwork, a literature review, and perusal of social media, I explore the origins of Israeli involvement in high-tech activities and the extensive linkages between Israeli emigrants and the Israeli high-tech industry. I also summarize the patterns of communal cooperation that permit emigrant families to maintain an Israel-oriented way of life in suburban communities south of San Francisco, and I compare these patterns with those of Indians, a nationality engaged in the same pursuit. I conclude by considering the impact of infotech involvement on Israeli immigrants and on the U.S. economy.

  6. Why do European companies have Innovation Hubs in Silicon Valley

    DEFF Research Database (Denmark)

    Berger, Andreas; Brem, Alexander

    2017-01-01

    Innovation hubs are gaining high attention in recent years, especially from European companies. Silicon Valley has been deemed as one of the most attractive and successful environments for establishing innovation hubs. This article highlights examples of companies from Europe that made the step...... to California—namely, Volkswagen, Swisscom, BMW, Axel Springer, Munich Re, and Innogy SE (RWE Group). Based on these companies’ experiences, recommendations are given on how companies might approach a setup in Silicon Valley for long-term success....

  7. Summary Robert Noyce and the invention of Silicon Valley

    CERN Document Server

    2014-01-01

    This work offers a summary of the book "THE MAN BEHIND THE MICROCHIP: Robert Noyce and the Invention of Silicon Valley""by Leslie Berlin.The Man behind the Microchip is Leslie Berlin's first book. This author is project historian for the Silicon Valley Archives, a division of the Stanford University Department of Special Collections. This book tells the story of a giant of the high-tech industry: the multimillionaire Bob Noyce. This co-founder of Fairchild Semiconductor and Intel co-invented the integrated circuit which became the electronic heart of every modern computer, automobile, advance

  8. Wat kunnen we in Nederland leren van Silicon Valley

    NARCIS (Netherlands)

    Dr. P. Ester

    2016-01-01

    De aantrekkingskracht van de hightech innovatieregio Silicon Valley, in de strook van pakweg 90 kilometer tussen San Francisco en San Jose, is groot. Een regio met de meeste startups ter wereld. En ook ons land wil de borst vooruit steken. Of dat gaat lukken is geen kwestie van copy & paste, maar

  9. HBO-I on tour in Silicon Valley

    NARCIS (Netherlands)

    Ir. Deny Smeets; Drs. Miranda W Valkenburg

    2005-01-01

    Wat is 'hot' en wat is 'not' in de ict? Dat was 'in a nutshell' de reden voor het HBO-I om een studiereis te maken naar het Mekka voor ict'ers: Silicon Valley. Voor VS-verhoudingen een klein gebied met relatief veel belangrijke ict-bedrijven: SUN, Intel, Oracle, Hewlett-Packard. En twee van de beste

  10. The Legal Road To Replicating Silicon Valley

    OpenAIRE

    John Armour; Douglas Cumming

    2004-01-01

    Must policymakers seeking to replicate the success of Silicon Valley’s venture capital market first replicate other US institutions, such as deep and liquid stock markets? Or can legal reforms alone make a significant difference? In this paper, we compare the economic and legal determinants of venture capital investment, fundraising and exits. We introduce a cross-sectional and time series empirical analysis across 15 countries and 13 years of data spanning an entire business cycle. We show t...

  11. Predicting the valley physics of silicon quantum dots directly from a device layout

    Science.gov (United States)

    Gamble, John King; Harvey-Collard, Patrick; Jacobson, N. Tobias; Bacewski, Andrew D.; Nielsen, Erik; Montaño, Inès; Rudolph, Martin; Carroll, Malcolm S.; Muller, Richard P.

    Qubits made from electrostatically-defined quantum dots in Si-based systems are excellent candidates for quantum information processing applications. However, the multi-valley structure of silicon's band structure provides additional challenges for the few-electron physics critical to qubit manipulation. Here, we present a theory for valley physics that is predictive, in that we take as input the real physical device geometry and experimental voltage operation schedule, and with minimal approximation compute the resulting valley physics. We present both effective mass theory and atomistic tight-binding calculations for two distinct metal-oxide-semiconductor (MOS) quantum dot systems, directly comparing them to experimental measurements of the valley splitting. We conclude by assessing these detailed simulations' utility for engineering desired valley physics in future devices. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. The authors gratefully acknowledge support from the Sandia National Laboratories Truman Fellowship Program, which is funded by the Laboratory Directed Research and Development (LDRD) Program.

  12. The Silicon Valley Eco System. High-energetic in many ways; Het Silicon Valley Eco Systeem: hoogenergetisch in vele opzichten

    Energy Technology Data Exchange (ETDEWEB)

    Van den Heuvel, J.

    2012-04-15

    The highly commended Silicon Valley Eco System is bubbling with energy with regard to the subjects that are focused upon, including sustainable energy, or the widely available expertise that is needed for the developments, good ideas, capital and optimism, fed by frequent examples of extraordinarily successful companies. The sheer endlessness of network opportunities joins all these elements frequently. This article addresses several noteworthy interactions in the field of sustainable energy over the last period. [Dutch] Het veel geroemde Silicon Valley eco systeem bruist van energie in de vorm van de onderwerpen waar men zich op richt, waaronder duurzame energie, of de ruim aanwezige expertise die nodig is voor de ontwikkelingen, goede ideeen, kapitaal, en optimisme, gevoed door regelmatige voorbeelden van buitensporig succesvolle bedrijven. De schier oneindige netwerkmogelijkheden brengen al deze elementen met grote regelmaat bij elkaar. In dit artikel volgen enkele vermeldenswaardige interacties op het vlak van duurzame energie uit de afgelopen periode.

  13. How Silicon Valley Journalists Talk about: Independence in Innovation Coverage

    DEFF Research Database (Denmark)

    Mogensen, Kirsten; Nordfors, David

    2010-01-01

    as a keyword. The valley culture is known to stress the value of trust-based personal contacts. This applies also to journalists and their access to sources. This paper discusses how this relates to traditional journalism norms that stress journalists’ independence from sources. Based on explorative, semi......Silicon Valley has become known for innovations that have led to substantial changes for citizens around the world. In 1960s’-80s’ the innovation had to do with computers and electronics, 1990s-00s’ it was on Internet and Web services. Since the later part of the 00’s, clean tech has emerged...... that as access to powerful sources becomes scarce and controlled journalists tend to be more innovative and diverse in shaping professional norms to balance access to sources with their readers’ mandate. The continued development of this diversity of norms, and its impact on society needs to be further explored....

  14. Silicon Valley: Planet Startup : Disruptive Innovation, Passionate Entrepreneurship & High-tech Startups

    NARCIS (Netherlands)

    dr. A. Maas; Dr. P. Ester

    2016-01-01

    For decades now, Silicon Valley has been the home of the future. It's the birthplace of the world's most successful high-tech companies-including Apple, Yahoo, Google, Facebook, Twitter, and many more. So what's the secret? What is it about Silicon Valley that fosters entrepreneurship and

  15. Electron spin resonance and spin-valley physics in a silicon double quantum dot.

    Science.gov (United States)

    Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen

    2014-05-14

    Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

  16. Laboratory course on silicon strip detectors

    International Nuclear Information System (INIS)

    Montano, Luis M

    2005-01-01

    In this laboratory course we present an elementary introduction to the characteristics and applications of silicon detectors in High-Energy Physics, through performing some measurements which give an overview of the properties of these detectors as position resolution. The principles of operation are described in the activities the students have to develop together with some exercises to reinforce their knowledge on these devices

  17. Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

    NARCIS (Netherlands)

    Rahman, R.; Verduijn, J.; Kharche, N.; Lansbergen, G.P.; Klimeck, G.; Hollenberg, L.C.L.; Rogge, S.

    2011-01-01

    An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the conduction band present in silicon. Understanding

  18. Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade

    NARCIS (Netherlands)

    Lansbergen, G.P.; Rahman, R.; Verduijn, J.; Tettamanzi, G.C.; Collaert, N.; Biesemans, S.; Klimeck, G.; Hollenberg, L.C.L.; Rogge, S.

    2011-01-01

    We report the observation of lifetime-enhanced transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition

  19. Laboratory work in support of West Valley glass development

    International Nuclear Information System (INIS)

    Bunnell, L.R.

    1988-05-01

    Over the past six years, Pacific Northwest Laboratory (PNL) has conducted several studies in support of waste glass composition development and testing of glass compositions suitable for immobilizing the nuclear wastes stored at West Valley, New York. As a result of pilot-scale testing conducted by PNL, the glass composition was changed from that originally recommended in response to changes in the waste stream, and several processing-related problems were discovered. These problems were solved, or sufficiently addressed to determine their likely effect on the glass melting operations to be conducted at West Valley. This report describes the development of the waste glass composition, WV-205, and discusses solutions to processing problems such as foaming and insoluble sludges, as well as other issues such as effects of feed variations on processing of the resulting glass. An evaluation of the WV-205 glass from a repository perspective is included in the appendix to this report

  20. Spin filling of valley-orbit states in a silicon quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Lim, W H; Yang, C H; Zwanenburg, F A; Dzurak, A S, E-mail: wee.lim@unsw.edu.au [Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW 2052 (Australia)

    2011-08-19

    We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N = 27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realisation in the near future of spin qubits based on silicon quantum dots.

  1. Labour Markets and Employment Practices in the Age of Flexibility: A Case Study of Silicon Valley.

    Science.gov (United States)

    Carnoy, Martin; And Others

    1997-01-01

    Flexible employment has accounted for more than half of Silicon Valley's total employment growth in the past 10 years. Flexible employment has become a permanent strategy that may create insecurity for low-skilled workers; it also leads to a high turnover rate among highly skilled workers. (JOW)

  2. L’intelligence artificielle et la tragique persistance de l’imaginaire de la Silicon Valley

    OpenAIRE

    Delvenne, Pierre; Macq, Hadrien

    2017-01-01

    Dans cette carte blanche publiée, nous essayons de prendre du recul sur la fascination exercée par l'intelligence artificielle, et sur le pourquoi il nous semble important de développer une pensée critique quand beaucoup d'acteurs rêvent d'une Silicon Valley en Belgique ou en Wallonie.

  3. Start me up in Silicon Valley : Over passie en ambitie van Nederlandse ondernemers

    NARCIS (Netherlands)

    Dr. P. Ester; dr. A. Maas

    2014-01-01

    Dit boek beschrijft hoe Nederlandse ondernemers in Silicon Valley een bedrijf zijn begonnen. Waarom daar? Wat is er zo geweldig en anders aan ondernemen in dit walhalla van innovatie? Peter Ester en Arne Maas interviewden meer dan 20 Nederlandse ondernemers. Dit boek gaat over die ondernemers. Over

  4. Specters of Waste in India's "Silicon Valley": The Underside of Bangalore's Hi-Tech Economy

    Science.gov (United States)

    Narayanareddy, Rajyashree

    2011-01-01

    The southern Indian city of Bangalore is extolled as India's "Silicon Valley," emerging over the past decade as a premier site for capital flows into India's Information Technology (IT) sector. In the dominant narrative of globalization Bangalore is lauded as an aspiring "global city" that attracts sizeable quantities of…

  5. The man behind the microchip Robert Noyce and the invention of Silicon Valley

    CERN Document Server

    Berlin, Leslie

    2005-01-01

    Robert Noyce was a brilliant inventor, a leading entrepreneur and a daring risk taker, who piloted his own jets and skied mountains accessible only by helicopter. This book captures not only this colorful individual, but also the vibrant interplay of technology, business, money, politics and culture that defines the Silicon Valley.

  6. THE ROLE OF SOCIAL NETWORKS IN THE REGIONAL DEVELOPMENT: THE CASE OF SILICON VALLEY

    Directory of Open Access Journals (Sweden)

    MURAT ÇETİN

    2013-06-01

    Full Text Available Social capital has commonly been discussed in recent years from the perspective of sociology, economics and political science. Social capital defines the structure of social relations among economic actors in a region. Regional development depends directly on the level of actors’ social capital. This study focuses on the importance of social networks, an important factor of social capital, in the economy of Silicon Valley. These networks improve many-sided and intensive social relations and collaborative activities within and among universities, research centers, venture capitalists, law firms, industrial firms and investment banks in the region. In Silicon Valley, social networks have special importance in the movement of labor, the gaining of influence and power, and the actual production of innovation. Thus, social networks can be evaluated as a driver of economic development.

  7. Radioanalytical laboratory quality control: Current status at Tennessee Valley Authority's western area radiological laboratory

    International Nuclear Information System (INIS)

    Rogers, W.J.

    1986-01-01

    The Tennessee Valley Authority operates a laboratory for radiological analysis of nuclear plant environmental monitoring samples and also for analysis of environmental samples from uranium mining and milling decommissioning activities. The laboratory analyzes some 9,000 samples per year and employs approximately 20 people as analysts, sample collectors, and supervisory staff members. The laboratory is supported by a quality control section of four people involved in computer support, production of radioactive standards, quality control data assessment and reporting, and internal reviews of compliance. The entire laboratory effort is controlled by 60 written procedures or standards. An HP-1000 computer and data base software are used to schedule samples for collection, assign and schedule samples within the laboratory for preparation and analysis, calculate sample activity, review data, and report data outside the laboratory. Gamma spectroscopy systems with nine germanium detectors, an alpha spectroscopy system, five alpha/beta counters, two liquid scintillation counters, four beta-gamma coincidence systems, two sodium iodide single-channel systems, and four photomultipliers for counting Lucas cells are all employed. Each device has various calibration and quality control checks performed on it routinely. Logbooks and control charts are in use for each instrument

  8. Subsurface and petroleum geology of the southwestern Santa Clara Valley ("Silicon Valley"), California

    Science.gov (United States)

    Stanley, Richard G.; Jachens, Robert C.; Lillis, Paul G.; McLaughlin, Robert J.; Kvenvolden, Keith A.; Hostettler, Frances D.; McDougall, Kristin A.; Magoon, Leslie B.

    2002-01-01

    Gravity anomalies, historical records of exploratory oil wells and oil seeps, new organic-geochemical results, and new stratigraphic and structural data indicate the presence of a concealed, oil-bearing sedimentary basin beneath a highly urbanized part of the Santa Clara Valley, Calif. A conspicuous isostatic-gravity low that extends about 35 km from Palo Alto southeastward to near Los Gatos reflects an asymmetric, northwest-trending sedimentary basin comprising low-density strata, principally of Miocene age, that rest on higher-density rocks of Mesozoic and Paleogene(?) age. Both gravity and well data show that the low-density rocks thin gradually to the northeast over a distance of about 10 km. The thickest (approx 4 km thick) accumulation of low-density material occurs along the basin's steep southwestern margin, which may be controlled by buried, northeast-dipping normal faults that were active during the Miocene. Movement along these hypothetical normal faults may been contemporaneous (approx 17–14 Ma) with sedimentation and local dacitic and basaltic volcanism, possibly in response to crustal extension related to passage of the northwestward-migrating Mendocino triple junction. During the Pliocene and Quaternary, the normal faults and Miocene strata were overridden by Mesozoic rocks, including the Franciscan Complex, along northeastward-vergent reverse and thrust faults of the Berrocal, Shannon, and Monte Vista Fault zones. Movement along these fault zones was accompanied by folding and tilting of strata as young as Quaternary and by uplift of the modern Santa Cruz Mountains; the fault zones remain seismically active. We attribute the Pliocene and Quaternary reverse and thrust faulting, folding, and uplift to compression caused by local San Andreas Fault tectonics and regional transpression along the Pacific-North American Plate boundary. Near the southwestern margin of the Santa Clara Valley, as many as 20 exploratory oil wells were drilled between 1891

  9. Do VCs use inside rounds to dilute founders? Some evidence from Silicon Valley

    OpenAIRE

    Fried, Jesse M.; Broughman, Brian J.

    2012-01-01

    In the bank-borrower setting, a firm’s existing lender may exploit its positional advantage to extract rents from the firm in subsequent financings. Analogously, a startup’s existing venture capital investors (VCs) may dilute the founder through a follow-on financing from these same VCs (an “inside” round) at an artificially low valuation. Using a hand-collected dataset of Silicon Valley startup firms, we find little evidence that VCs use inside rounds to dilute founders. Instead, our finding...

  10. Fort Valley studies: A natural laboratory for research and education

    Science.gov (United States)

    Brian W. Geils

    2008-01-01

    Drought, wildfire, extinction, and invasive species are considered serious threats to the health of our forests. Although these issues have global connections, we most readily see their consequences locally and attempt to respond with management based on science. For 100 years, the Fort Valley Experimental Forest (FVEF) has provided educational and experimental support...

  11. Clustering in ICT: From Route 128 to Silicon Valley, from DEC to Google, from Hardware to Content

    NARCIS (Netherlands)

    W. Hulsink (Wim); D. Manuel; H. Bouwman (Harry)

    2007-01-01

    textabstractOne of the pioneers in academic entrepreneurship and high-tech clustering is MIT and the Route 128/Boston region. Silicon Valley centered around Stanford University was originally a fast follower and only later emerged as a scientific and industrial hotspot. Several technology and

  12. Terahertz optical-Hall effect for multiple valley band materials: n-type silicon

    International Nuclear Information System (INIS)

    Kuehne, P.; Hofmann, T.; Herzinger, C.M.; Schubert, M.

    2011-01-01

    The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.

  13. Oak Ridge National Laboratory Melton Valley Storage Tanks Waste Filtration Process Evaluation

    International Nuclear Information System (INIS)

    Walker, B.W.

    1998-01-01

    Cross-flow filtration is being evaluated as a pretreatment in the proposed treatment processes for aqueous high-level radioactive wastes at Oak Ridge National Laboratory (ORNL) to separate insoluble solids from aqueous waste from the Melton Valley Storage Tanks (MVST)

  14. Operationalizing ecological resilience at a landscape scale: A framework and case study from Silicon Valley

    Science.gov (United States)

    Beller, E.; Robinson, A.; Grossinger, R.; Grenier, L.; Davenport, A.

    2015-12-01

    Adaptation to climate change requires redesigning our landscapes and watersheds to maximize ecological resilience at large scales and integrated across urban areas, wildlands, and a diversity of ecosystem types. However, it can be difficult for environmental managers and designers to access, interpret, and apply resilience concepts at meaningful scales and across a range of settings. To address this gap, we produced a Landscape Resilience Framework that synthesizes the latest science on the qualitative mechanisms that drive resilience of ecological functions to climate change and other large-scale stressors. The framework is designed to help translate resilience science into actionable ecosystem conservation and restoration recommendations and adaptation strategies by providing a concise but comprehensive list of considerations that will help integrate resilience concepts into urban design, conservation planning, and natural resource management. The framework is composed of seven principles that represent core attributes which determine the resilience of ecological functions within a landscape. These principles are: setting, process, connectivity, redundancy, diversity/complexity, scale, and people. For each principle we identify several key operationalizable components that help illuminate specific recommendations and actions that are likely to contribute to landscape resilience for locally appropriate species, habitats, and biological processes. We are currently using the framework to develop landscape-scale recommendations for ecological resilience in the heavily urbanized Silicon Valley, California, in collaboration with local agencies, companies, and regional experts. The resilience framework is being applied across the valley, including urban, suburban, and wildland areas and terrestrial and aquatic ecosystems. Ultimately, the framework will underpin the development of strategies that can be implemented to bolster ecological resilience from a site to

  15. Capital social y desarrollo económico. Los casos de Silicon Valley y Villa El Salvador

    Directory of Open Access Journals (Sweden)

    Pablo Galaso Reca

    2005-01-01

    Full Text Available Este artículo se refiere a las relaciones existentes entre el capital social y el desarrollo económico. Para ello, en primer lugar presenta un marco teórico que muestra la evolución del concepto de capital social, su clasificación, medición y algunas aplicaciones prácticas. Posteriormente, explica teóricamente los efectos del capital social en el desarrollo económico. Finalmente, analiza dos experiencias de desarrollo económico altamente vinculadas con el concepto de capital social: los casos de Silicon Valley y Villa El Salvador.

  16. Basic and acidic leaching of Melton Valley Storage Tank sludge at Oak Ridge National Laboratory

    International Nuclear Information System (INIS)

    Collins, J.L.; Egan, B.Z.; Beahm, E.C.

    1995-01-01

    Basic and acidic leaching tests were conducted with samples of sludge taken from an underground storage tank at the US Department of Energy Melton Valley Storage Tank facility at Oak Ridge National Laboratory. The tests evaluated separation technologies for use in sludge processing to concentrate the radionuclides and reduce the volumes of storage tank waste for final disposal. Study results of sludge characterization, caustic leaching of sludge samples at ambient temperature and at 95 degrees C, and acid leaching of sludge samples at ambient temperature are reported in detail

  17. Melton Valley Storage Tanks Capacity Increase Project, Oak Ridge National Laboratory, Oak Ridge, Tennessee

    International Nuclear Information System (INIS)

    1995-04-01

    The US Department of Energy (DOE) proposes to construct and maintain additional storage capacity at Oak Ridge National Laboratory (ORNL), Oak Ridge, Tennessee, for liquid low-level radioactive waste (LLLW). New capacity would be provided by a facility partitioned into six individual tank vaults containing one 100,000 gallon LLLW storage tank each. The storage tanks would be located within the existing Melton Valley Storage Tank (MVST) facility. This action would require the extension of a potable water line approximately one mile from the High Flux Isotope Reactor (HFIR) area to the proposed site to provide the necessary potable water for the facility including fire protection. Alternatives considered include no-action, cease generation, storage at other ORR storage facilities, source treatment, pretreatment, and storage at other DOE facilities

  18. Oak Ridge National Laboratory Melton Valley Storage Tanks Waste filtration process evaluation

    International Nuclear Information System (INIS)

    Walker, B.W.; McCabe, D.J.

    1997-01-01

    The purpose of this filter study was to evaluate cross-flow filtration as effective solid-liquid separation technology for treating Oak Ridge National Laboratory wastes, outline operating conditions for equipment, examine the expected filter flow rates, and determine proper cleaning.The Gunite Tanks at the Oak Ridge National Laboratory contain heels which are a mixture of sludge, wash water, and bentonite clay. The tanks are to be cleaned out with a variety of flushing techniques and the dilute mixture transferred to another storage tank. One proposal is to transfer this mixture into existing Melton Valley Storage Tanks (MVST), which already contain a large amount of sludge and supernate. The mixed aqueous phase will then be transferred to new MVST, which are prohibited from containing insoluble solids. To separate the solid from the liquid and thereby prevent solids transfer into the new MVST, a technique is needed that can cleanly separate the sludge and bentonite clay from the supernate. One proposed method for solid liquid separation is cross-flow filtration. Cross-flow filtration has been used at the Savannah River and West Valley sites for treatment of tank waste, and is being tested for applicability at other sites. The performance of cross-flow filters with sludge has been tested, but the impact of sludge combined with bentonite clay has not. The objective of this test was to evaluate the feasibility of using cross-flow filters to perform the solid liquid separation required for the mixture of Gunite and MVST tank wastes

  19. Laboratory and test beam results from a large-area silicon drift detector

    CERN Document Server

    Bonvicini, V; Giubellino, P; Gregorio, A; Idzik, M; Kolojvari, A A; Montaño-Zetina, L M; Nouais, D; Petta, C; Rashevsky, A; Randazzo, N; Reito, S; Tosello, F; Vacchi, A; Vinogradov, L I; Zampa, N

    2000-01-01

    A very large-area (6.75*8 cm/sup 2/) silicon drift detector with integrated high-voltage divider has been designed, produced and fully characterised in the laboratory by means of ad hoc designed MOS injection electrodes. The detector is of the "butterfly" type, the sensitive area being subdivided into two regions with a maximum drift length of 3.3 cm. The device was also tested in a pion beam (at the CERN PS) tagged by means of a microstrip detector telescope. Bipolar VLSI front-end cells featuring a noise of 250 e/sup -/ RMS at 0 pF with a slope of 40 e/sup -//pF have been used to read out the signals. The detector showed an excellent stability and featured the expected characteristics. Some preliminary results will be presented. (12 refs).

  20. Assembly and test of a silicon photodiode and a selenium cell in a laboratory photometer

    International Nuclear Information System (INIS)

    Mejias Espinoza, Hugo Alberto

    2008-01-01

    A comparison procedure is performed between a selenium cell and a silicon photodiode for measuring the relative amount of light in a laboratory photometer. The measurements were performed with the existing selenium cell in photometer of high sensitivity to see the behavior at different distances. Measurement instruments have been handled with extremely careful in the calibration. Measurements with neutral density filters have been unsuccessful, the final value which has given the multimeter does not vary fairly with the values of the neutral density filters. An improved transducer must be provided to the photometer circuit of high sensitivity to improve the graphics. A current to voltage converter must be supplemented to the phototransistor. Device response has improved to minimal changes in lighting [es

  1. Design assessment for the Bethel Valley FFA Upgrades at Oak Ridge National Laboratory, Oak Ridge, Tennessee

    International Nuclear Information System (INIS)

    1995-09-01

    This report describes the proposed upgrades to Building 3025 and the Evaporator Area at Oak Ridge National Laboratory. Design assessments, specifications and drawings are provided. Building 3025 is a general purpose research facility utilized by the Materials and Ceramics Division to conduct research on irradiated materials. The Evaporator Area, building 2531, serves as the collection point for all low-level liquid wastes generated at the Oak Ridge National Laboratory

  2. Dynamic surface deformation of silicone elastomers for management of marine biofouling: laboratory and field studies using pneumatic actuation.

    Science.gov (United States)

    Shivapooja, Phanindhar; Wang, Qiming; Szott, Lizzy M; Orihuela, Beatriz; Rittschof, Daniel; Zhao, Xuanhe; López, Gabriel P

    2015-01-01

    Many strategies have been developed to improve the fouling release (FR) performance of silicone coatings. However, biofilms inevitably build on these surfaces over time. Previous studies have shown that intentional deformation of silicone elastomers can be employed to detach biofouling species. In this study, inspired by the methods used in soft-robotic systems, controlled deformation of silicone elastomers via pneumatic actuation was employed to detach adherent biofilms. Using programmed surface deformation, it was possible to release > 90% of biofilm from surfaces in both laboratory and field environments. A higher substratum strain was required to remove biofilms accumulated in the field environment as compared with laboratory-grown biofilms. Further, the study indicated that substratum modulus influences the strain needed to de-bond biofilms. Surface deformation-based approaches have potential for use in the management of biofouling in a number of technological areas, including in niche applications where pneumatic actuation of surface deformation is feasible.

  3. The McMurdo Dry Valleys Magmatic Laboratory Workshop of 2005 in Antarctica

    Science.gov (United States)

    Marsh, B. D.; Simon, A.; Charrier, A. D.; Hersum, T. G.; Eschholz, E.

    2005-12-01

    In January of 2005, twenty-five petrologists, volcanologists, geochemists, structural geologists, and magma dynamicists spent two weeks studying and discussing the Magmatic Mush Column represented by the 180 Ma Ferrar Dolerites of the McMurdo Dry Valleys, Antarctica. This exceptionally well-exposed system shows a series of massive interconnected sills culminating in a capping of regional flood basalts. The lowermost sill, the Basement Sill, contains a massive ultramafic tongue of large phenocrysts of orthopyroxene (Opx) with subordinate Cpx and much smaller plagioclase. The 3-D distribution of this Opx Tongue serves as a tracer for the filling dynamics and local motion of the magma. Ponding of the Basement Sill has resulted in a small (500 m), but exceedingly diversified and extensively layered ultramafic intrusion, the Dais Intrusion. Because of the relatively rapid cooling time of this body, the Dais textures have been preserved before extensive annealing, which presents the possibility of using these textures to understand those of much larger, slowly cooled bodies. The combination of seeing in detail a wide variety of exceptional field relations depicting layering, sill emplacement mechanics, internal ordering and crystal sorting in the Opx Tongue, dike and fissure distributions, wall rock thermal effects, and many other first order features of central interest to understanding magmatic processes and performing research in real time was a new challenge to all involved. Facilities were set up at McMurdo Station for rock cutting, thin-section making, map making, GIS analysis, petrographic analysis, and computer modeling using existing chemical and physical data on a spectrum of the representative rock types. At any one time half the group was housed in the field in Bull Pass near Wright Valley and the remaining group was shuttled in by helicopter each day. The principal groups were switched about every three days. Areas for daily field-work were decided upon by

  4. Laboratory evaluation of hot metal de siliconizing process in ladle; Avaliacao laboratorial do processo de dessiliciacao do gusa na panela

    Energy Technology Data Exchange (ETDEWEB)

    Passos, Sergio R.M.; Furtado, Henrique S.; Bentes, Miguel A.G.; Almeida, Pedro S. de [Companhia Siderurgica Nacional, Volta Redonda, RJ (Brazil). Centro de Pesquisas

    1996-12-31

    The attractiveness of hot metal de siliconizing in ladle, relative to the process in blast furnace runner, is the previous knowledge of silicon content of hot metal, without the constraints of slag removing by skimmer met in torpedo car, and the better efficiency in low range silicon content, making easier the process controllability. Meanwhile, the main question about this technology is the extent of the resulfurization of hot metal that may occur due to process be performed after the desulfurization. This work simulates de de siliconizing process in ladle by experiments in induction furnace to compare the efficiencies of various de siliconizing agents available at CSN iron and steel making plant, and to evaluate the resulfurization intensity able to occur during the process, as well as, unexpected increasing of refractory wear. (author) 4 refs., 8 figs., 6 tabs.

  5. Final Verification Success Story Using the Triad Approach at the Oak Ridge National Laboratory's Melton Valley Soils and Sediment Project

    International Nuclear Information System (INIS)

    King, D.A.; Haas, D.A.; Cange, J.B.

    2006-01-01

    The United States Environmental Protection Agency recently published guidance on the Triad approach, which supports the use of smarter, faster, and better technologies and work strategies during environmental site assessment, characterization, and cleanup. The Melton Valley Soils and Sediment Project (Project) at the Oak Ridge National Laboratory embraced this three-pronged approach to characterize contaminants in soil/sediment across the 1000-acre Melton Valley Watershed. Systematic Project Planning is the first of three prongs in the Triad approach. Management initiated Project activities by identifying key technical personnel, included regulators early in the planning phase, researched technologies, and identified available resources necessary to meet Project objectives. Dynamic Work Strategies is the second prong of the Triad approach. Core Team members, including State and Federal regulators, helped develop a Sampling and Analysis Plan that allowed experienced field managers to make real-time, in-the-field decisions and, thus, to adjust to conditions unanticipated during the planning phase. Real-time Measurement Technologies is the third and last prong of the Triad approach. To expedite decision-making, the Project incorporated multiple in-field technologies, including global positioning system equipment integrated with field screening instrumentation, magnetometers for utility clearance, and an on-site gamma spectrometer (spec) for rapid contaminant speciation and quantification. As a result of a relatively complex but highly efficient program, a Project field staff of eight collected approximately 1900 soil samples for on-site gamma spec analysis (twenty percent were also shipped for off-site analyses), 4.7 million gamma radiation measurements, 1000 systematic beta radiation measurements, and 3600 systematic dose rate measurements between July 1, 2004, and October 31, 2005. The site database previously contained results for less than 500 soil samples dating

  6. White Oak Creek watershed: Melton Valley area Remedial Investigation report, at the Oak Ridge National Laboratory, Oak Ridge, Tennessee: Volume 2, Appendixes A and B

    International Nuclear Information System (INIS)

    1996-11-01

    This document contains Appendixes A ''Source Inventory Information for the Subbasins Evaluated for the White Oak Creek Watershed'' and B ''Human Health Risk Assessment for White Oak Creek / Melton Valley Area'' for the remedial investigation report for the White Oak Creek Watershed and Melton Valley Area. Appendix A identifies the waste types and contaminants for each subbasin in addition to the disposal methods. Appendix B identifies potential human health risks and hazards that may result from contaminants present in the different media within Oak Ridge National Laboratory sites

  7. Laboratory safe detection of nucleocapsid protein of Rift Valley fever virus in human and animal specimens by a sandwich ELISA.

    Science.gov (United States)

    Jansen van Vuren, P; Paweska, J T

    2009-04-01

    A safe laboratory procedure, based on a sandwich ELISA (sAg-ELISA), was developed and evaluated for the detection of nucleocapsid protein (NP) of Rift Valley fever virus (RVFV) in specimens inactivated at 56 degrees C for 1h in the presence of 0.5% Tween-20 (v/v) before testing. Polyclonal capture and detection immune sera were generated respectively in sheep and rabbits immunized with recombinant NP antigen. The assay was highly repeatable and specific; it detected strains of RVFV from the entire distributional range of the disease, isolated over a period of 53 years; no cross-reactivity with genetically related African phleboviruses or other members of the family Bunyaviridae was observed. In specimens spiked with RVFV, including human and animal sera, homogenates of liver and spleen tissues of domestic ruminants, and Anopheles mosquito homogenates, the sAg-ELISA detection limit ranged from log(10)10(2.2) to 10(3.2) TCID(50)/reaction volume. The ELISA detected NP antigen in spiked bovine and sheep liver homogenates up to at least 8 days of incubation at 37 degrees C whereas infectious virus could not be detected at 48h incubation in these adverse conditions. Compared to virus isolation from sera from RVF patients and sheep infected experimentally, the ELISA had 67.7% and 70% sensitivity, and 97.97% and 100% specificity, respectively. The assay was 100% accurate when testing tissues of various organs from mice infected experimentally and buffalo foetuses infected naturally. The assay was able to detect NP antigen in infective culture supernatants 16-24h before cytopathic effects were observed microscopically and as early as 8h after inoculation with 10(5.8) TCID(50)/ml of RVFV. This ability renders the assay for rapid identification of the virus when its primary isolation is attempted in vitro. As a highly specific, safe and simple assay format, the sAg-ELISA represents a valuable diagnostic tool for use in less equipped laboratories in Africa, and for routine

  8. Silicon switch development for optical pulse generation in fusion lasers at Lawrence Livermore National Laboratory

    International Nuclear Information System (INIS)

    Wilcox, R.B.

    1983-01-01

    We have been developing a silicon photoconductive switch for use as a Pockels cell driver in the pulse generation systems of the fusion lasers Nova and Novette. The objective has been to make 10 kV switches repeatably and which are reliable on an operating system. We found that nonlinear phenomena in nearly intrinsic silicon caused excessive conduction at high voltage resulting in breakdown. Our experiments with doped material show that this problem can be eliminated, resulting in useful devices

  9. Remedial investigation report on the Melton Valley watershed at Oak Ridge National Laboratory, Oak Ridge, Tennessee. Volume 3: Appendix C

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-05-01

    The Melton Valley watershed presents a multifaceted management and decision-making challenge because of the very heterogeneous conditions that exist with respect to contaminant type, disposal unit age, mode of disposal, release mechanism, and potential risk-producing pathways. The investigation presented here has assembled relevant site data in the geographic context with the intent of enabling program managers and decision-makers to understand site conditions and evaluate the necessity, relative priority, and scope of potential remedial actions. The industrial and recreational exposure scenarios are used to provide a risk assessment reference context to evaluate levels of contamination in surface water, groundwater, soil, and sediment within each subbasin of the Melton Valley watershed. All available analytical results for the media of interest that could be qualified for use in the risk assessment were screened to determine carcinogenic risk values and noncarcinogenic hazard indexes and to identify the chemicals of concern (COCs) for each evaluated media in each subbasin.

  10. Remedial investigation report on the Melton Valley watershed at Oak Ridge National Laboratory, Oak Ridge, Tennessee. Volume 3: Appendix C

    International Nuclear Information System (INIS)

    1997-05-01

    The Melton Valley watershed presents a multifaceted management and decision-making challenge because of the very heterogeneous conditions that exist with respect to contaminant type, disposal unit age, mode of disposal, release mechanism, and potential risk-producing pathways. The investigation presented here has assembled relevant site data in the geographic context with the intent of enabling program managers and decision-makers to understand site conditions and evaluate the necessity, relative priority, and scope of potential remedial actions. The industrial and recreational exposure scenarios are used to provide a risk assessment reference context to evaluate levels of contamination in surface water, groundwater, soil, and sediment within each subbasin of the Melton Valley watershed. All available analytical results for the media of interest that could be qualified for use in the risk assessment were screened to determine carcinogenic risk values and noncarcinogenic hazard indexes and to identify the chemicals of concern (COCs) for each evaluated media in each subbasin

  11. White Oak Creek Watershed: Melton Valley Area Remedial Investigation Report, Oak Ridge National Laboratory, Oak Ridge, Tennessee: Volume 3 Appendix C

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-11-01

    This report provides details on the baseline ecological risk assessment conducted in support of the Remedial Investigation (RI) Report for the Melton Valley areas of the White Oak Creek watershed (WOCW). The RI presents an analysis meant to enable the US Department of Energy (DOE) to pursue a series of remedial actions resulting in site cleanup and stabilization. The ecological risk assessment builds off of the WOCW screening ecological risk assessment. All information available for contaminated sites under the jurisdiction of the US Department of Energy`s Comprehensive Environmental Response, Compensation, and Liability Act Federal Facilities Agreement within the White Oak Creek (WOC) RI area has been used to identify areas of potential concern with respect to the presence of contamination posing a potential risk to ecological receptors within the Melton Valley area of the White Oak Creek watershed. The risk assessment report evaluates the potential risks to receptors within each subbasin of the watershed as well as at a watershed-wide scale. The WOC system has been exposed to contaminant releases from Oak Ridge National Laboratory and associated operations since 1943 and continues to receive contaminants from adjacent waste area groupings.

  12. White Oak Creek Watershed: Melton Valley Area Remedial Investigation Report, Oak Ridge National Laboratory, Oak Ridge, Tennessee: Volume 3 Appendix C

    International Nuclear Information System (INIS)

    1996-11-01

    This report provides details on the baseline ecological risk assessment conducted in support of the Remedial Investigation (RI) Report for the Melton Valley areas of the White Oak Creek watershed (WOCW). The RI presents an analysis meant to enable the US Department of Energy (DOE) to pursue a series of remedial actions resulting in site cleanup and stabilization. The ecological risk assessment builds off of the WOCW screening ecological risk assessment. All information available for contaminated sites under the jurisdiction of the US Department of Energy's Comprehensive Environmental Response, Compensation, and Liability Act Federal Facilities Agreement within the White Oak Creek (WOC) RI area has been used to identify areas of potential concern with respect to the presence of contamination posing a potential risk to ecological receptors within the Melton Valley area of the White Oak Creek watershed. The risk assessment report evaluates the potential risks to receptors within each subbasin of the watershed as well as at a watershed-wide scale. The WOC system has been exposed to contaminant releases from Oak Ridge National Laboratory and associated operations since 1943 and continues to receive contaminants from adjacent waste area groupings

  13. Scaled Vitrification System III (SVS III) Process Development and Laboratory Tests at the West Valley Demonstration Project

    International Nuclear Information System (INIS)

    Jain, V.; Barnes, S.M.; Bindi, B.G.; Palmer, R.A.

    2000-01-01

    At the West Valley Demonstration Project (WVDP),the Vitrification Facility (VF)is designed to convert the high-level radioactive waste (HLW)stored on the site to a stable glass for disposal at a Department of Energy (DOE)-specified federal repository. The Scaled Vitrification System III (SVS-III)verification tests were conducted between February 1995 and August 1995 as a supplemental means to support the vitrification process flowsheet, but at only one seventh the scale.During these tests,the process flowsheet was refined and optimized. The SVS-III test series was conducted with a focus on confirming the applicability of the Redox Forecasting Model, which was based on the Index of Feed Oxidation (IFO)developed during the Functional and Checkout Testing of Systems (FACTS)and SVS-I tests. Additional goals were to investigate the prototypical feed preparation cycle and test the new target glass composition. Included in this report are the basis and current designs of the major components of the Scale Vitrification System and the results of the SVS-III tests.The major subsystems described are the feed preparation and delivery, melter, and off-gas treatment systems. In addition,the correlation between the melter's operation and its various parameters;which included feed rate,cold cap coverage,oxygen reduction (redox)state of the glass,melter power,plenum temperature,and airlift analysis;were developed

  14. Mr. Lorenzo Dellai, presidente della provincia Autonoma di Trento and Professor Andrea Zanotti, president dell'Instituto Trentino di Cultura, visit ALICE experiment underground area and Pixel Silicon Laboratory

    CERN Multimedia

    Claudia Marcelloni

    2006-01-01

    Mr. Lorenzo Dellai, presidente della provincia Autonoma di Trento and Professor Andrea Zanotti, president dell'Instituto Trentino di Cultura, visit ALICE experiment underground area and Pixel Silicon Laboratory

  15. Linking Orbital, Field, and Laboratory Analyses of Dolerites in the McMurdo Dry Valleys of Antarctica: Terrestrial Studies and Planetary Applications

    Science.gov (United States)

    Salvatore, M. R.; Mustard, J. F.; Head, J. W.; Marchant, D. R.; Wyatt, M. B.; Seeley, J.

    2012-03-01

    Primary igneous and secondary alteration signatures can be resolved using orbital spectroscopy over mafic regions of the McMurdo Dry Valleys. We assess the nature of these signatures and their link to surface stability and regional microclimates.

  16. Device-Level Models Using Multi-Valley Effective Mass

    Science.gov (United States)

    Baczewski, Andrew D.; Frees, Adam; Gamble, John King; Gao, Xujiao; Jacobson, N. Tobias; Mitchell, John A.; Montaño, Inès; Muller, Richard P.; Nielsen, Erik

    2015-03-01

    Continued progress in quantum electronics depends critically on the availability of robust device-level modeling tools that capture a wide range of physics and effective mass theory (EMT) is one means of building such models. Recent developments in multi-valley EMT show quantitative agreement with more detailed atomistic tight-binding calculations of phosphorus donors in silicon (Gamble, et. al., arXiv:1408.3159). Leveraging existing PDE solvers, we are developing a framework in which this multi-valley EMT is coupled to an integrated device-level description of several experimentally active qubit technologies. Device-level simulations of quantum operations will be discussed, as well as the extraction of process matrices at this level of theory. The authors gratefully acknowledge support from the Sandia National Laboratories Truman Fellowship Program, which is funded by the Laboratory Directed Research and Development (LDRD) Program. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Security Administration under contract DE-AC04-94AL85000.

  17. Valley Fever

    Science.gov (United States)

    ... valley fever. These fungi are commonly found in soil in specific regions. The fungi's spores can be stirred into the air by ... species have a complex life cycle. In the soil, they grow as a mold with long filaments that break off into airborne ...

  18. Remedial investigation report on the Melton Valley watershed at Oak Ridge National Laboratory, Oak Ridge, Tennessee. Volume 2: Appendixes A and B

    International Nuclear Information System (INIS)

    1997-05-01

    The Melton Valley watershed presents a multifaceted management and decision-making challenge because of the very heterogeneous conditions that exist with respect to contaminant type, disposal unit age, mode of disposal, release mechanism, and potential risk-producing pathways. The investigation presented here has assembled relevant site data in the geographic context with the intent of enabling program managers and decision-makers to understand site conditions and evaluate the necessity, relative priority, and scope of potential remedial actions. The industrial and recreational exposure scenarios are used to provide a risk assessment reference context to evaluate levels of contamination in surface water, groundwater, soil, and sediment within each subbasin of the Melton Valley watershed. All available analytical results for the media of interest that could be qualified for use in the risk assessment were screened to determine carcinogenic risk values and noncarcinogenic hazard indexes and to identify the chemicals of concern (COCs) for each evaluated media in each subbasin

  19. Remedial investigation report on the Melton Valley watershed at Oak Ridge National Laboratory, Oak Ridge, Tennessee. Volume 2: Appendixes A and B

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-05-01

    The Melton Valley watershed presents a multifaceted management and decision-making challenge because of the very heterogeneous conditions that exist with respect to contaminant type, disposal unit age, mode of disposal, release mechanism, and potential risk-producing pathways. The investigation presented here has assembled relevant site data in the geographic context with the intent of enabling program managers and decision-makers to understand site conditions and evaluate the necessity, relative priority, and scope of potential remedial actions. The industrial and recreational exposure scenarios are used to provide a risk assessment reference context to evaluate levels of contamination in surface water, groundwater, soil, and sediment within each subbasin of the Melton Valley watershed. All available analytical results for the media of interest that could be qualified for use in the risk assessment were screened to determine carcinogenic risk values and noncarcinogenic hazard indexes and to identify the chemicals of concern (COCs) for each evaluated media in each subbasin.

  20. Remedial investigation report on the Melton Valley Watershed at Oak Ridge National Laboratory, Oak Ridge, Tennessee. Volume 1: Evaluation, interpretation, and data summary

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-05-01

    The Melton Valley watershed presents a multifaceted management and decision-making challenge because of the very heterogeneous conditions that exist with respect to contaminant type, disposal unit age, mode of disposal, release mechanism, and potential risk-producing pathways. The investigation presented here has assembled relevant site data in the geographic context with the intent of enabling program managers and decision-makers to understand site conditions and evaluate the necessity, relative priority, and scope of potential remedial actions.

  1. Remedial investigation report on the Melton Valley Watershed at Oak Ridge National Laboratory, Oak Ridge, Tennessee. Volume 1: Evaluation, interpretation, and data summary

    International Nuclear Information System (INIS)

    1997-05-01

    The Melton Valley watershed presents a multifaceted management and decision-making challenge because of the very heterogeneous conditions that exist with respect to contaminant type, disposal unit age, mode of disposal, release mechanism, and potential risk-producing pathways. The investigation presented here has assembled relevant site data in the geographic context with the intent of enabling program managers and decision-makers to understand site conditions and evaluate the necessity, relative priority, and scope of potential remedial actions

  2. MOOCs and the Silicon Valley Narrative

    Science.gov (United States)

    Weller, Martin

    2015-01-01

    Massive open online courses (MOOCs) have generated considerable media interest, more than other education initiatives such as Open Education Resources (OERs). In this article the author argues that this can be seen as an example of the battle for narrative in open education. MOOCs attracted media interest because they appealed to broader…

  3. White Oak Creek Watershed: Melton Valley Area Remedial Investigation Report, Oak Ridge National Laboratory, Oak Ridge, Tennessee: Volume 1 Main Text

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-11-01

    The purpose of this Remedial Investigation (RI) report is to present an analysis of the Melton Valley portion of the White Oak Creek (WOC) watershed, which will enable the US Department of Energy (DOE) to pursue a series of cost-effective remedial actions resulting in site cleanup and stabilization. In this RI existing levels of contamination and radiological exposure are compared to levels acceptable for future industrial and potential recreational use levels at the site. This comparison provides a perspective for the magnitude of remedial actions required to achieve a site condition compatible with relaxed access restrictions over existing conditions. Ecological risk will be assessed to evaluate measures required for ecological receptor protection. For each subbasin, this report will provide site-specific analyses of the physical setting including identification of contaminant source areas, description of contaminant transport pathways, identification of release mechanisms, analysis of contaminant source interactions with groundwater, identification of secondary contaminated media associated with the source and seepage pathways, assessment of potential human health and ecological risks from exposure to contaminants, ranking of each source area within the subwatershed, and outline the conditions that remedial technologies must address to stop present and future contaminant releases, prevent the spread of contamination and achieve the goal of limiting environmental contamination to be consistent with a potential recreational use of the site.

  4. Design assessment for Melton Valley liquid low-level waste collection and transfer system upgrade project at Oak Ridge National Laboratory, Oak Ridge, Tennessee

    International Nuclear Information System (INIS)

    1994-10-01

    This project is designed for collecting liquid low level waste (LLLW) from generating points inside the Radioisotope Engineering and Development Center (Buildings 7920 and 7930) facility and transferring this waste to the Collection Tank (F-1800) in the new Monitoring and Control Station (MCS) facility. The LLLW is transferred to the MCS in a new, underground, jacketed, stainless steel piping system. The LLLW will then be transferred from Tank F-1800 through a new, underground, jacketed, stainless steel piping system that connects the existing Bethel Valley LLLW Collection System and the Evaporator Facility Service Tanks. The interface for the two systems will be at the existing Interconnecting Pipe Line (ICPL) Valve Box adjacent to the Nonradiological Wastewater Treatment Plant. The project scope consists of the following systems: (1) Building 7920 LLLW Collection System; (2) Building 7930 LLLW Collection System; (3) LLLW Underground Transfer System to MCS; (4) MCS Building (including all equipment contained therein); (5) LLLW Underground Transfer System to ICPL Valve Box; and (6) Leak detection system for jacketed piping systems (3) and (5)

  5. White Oak Creek Watershed: Melton Valley Area Remedial Investigation Report, Oak Ridge National Laboratory, Oak Ridge, Tennessee: Volume 1 Main Text

    International Nuclear Information System (INIS)

    1996-11-01

    The purpose of this Remedial Investigation (RI) report is to present an analysis of the Melton Valley portion of the White Oak Creek (WOC) watershed, which will enable the US Department of Energy (DOE) to pursue a series of cost-effective remedial actions resulting in site cleanup and stabilization. In this RI existing levels of contamination and radiological exposure are compared to levels acceptable for future industrial and potential recreational use levels at the site. This comparison provides a perspective for the magnitude of remedial actions required to achieve a site condition compatible with relaxed access restrictions over existing conditions. Ecological risk will be assessed to evaluate measures required for ecological receptor protection. For each subbasin, this report will provide site-specific analyses of the physical setting including identification of contaminant source areas, description of contaminant transport pathways, identification of release mechanisms, analysis of contaminant source interactions with groundwater, identification of secondary contaminated media associated with the source and seepage pathways, assessment of potential human health and ecological risks from exposure to contaminants, ranking of each source area within the subwatershed, and outline the conditions that remedial technologies must address to stop present and future contaminant releases, prevent the spread of contamination and achieve the goal of limiting environmental contamination to be consistent with a potential recreational use of the site

  6. Valley-orbit hybrid states in Si quantum dots

    Science.gov (United States)

    Gamble, John; Friesen, Mark; Coppersmith, S. N.

    2013-03-01

    The conduction band for electrons in layered Si nanostructures oriented along (001) has two low-lying valleys. Most theoretical treatments assume that these valleys are decoupled from the long-wavelength physics of electron confinement. In this work, we show that even a minimal amount of disorder (a single atomic step at the quantum well interface) is sufficient to mix valley states and electron orbitals, causing a significant distortion of the long-wavelength electron envelope. For physically realistic electric fields and dot sizes, this valley-orbit coupling impacts all electronic states in Si quantum dots, implying that one must always consider valley-orbit hybrid states, rather than distinct valley and orbital degrees of freedom. We discuss the ramifications of our results on silicon quantum dot qubits. This work was supported in part by ARO (W911NF-08-1-0482) and NSF (DMR-0805045).

  7. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  8. Design assessment for the Melton Valley Storage Tanks capacity increase at Oak Ridge National Laboratory under the Federal Facility Agreement, Oak Ridge, Tennessee

    International Nuclear Information System (INIS)

    1995-11-01

    This project was initiated to find ways to increase storage capacity for the liquid low-level waste (LLLW) system at the Oak Ridge National Laboratory and satisfy the Federal Facility Agreement (FFA) requirement for the transfer of LLW from existing tank systems not in full FFA compliance

  9. The behavior of silicon and boron in the surface of corroded nuclear waste glasses: an EFTEM study

    International Nuclear Information System (INIS)

    Buck, E. C.; Smith, K. L.; Blackford, M. G.

    1999-01-01

    Using electron energy-loss filtered transmission electron microscopy (EFTEM), we have observed the formation of silicon-rich zones on the corroded surface of a West Valley (WV6) glass. This layer is approximately 100-200 nm thick and is directly underneath a precipitated smectite clay layer. Under conventional (C)TEM illumination, this layer is invisible; indeed, more commonly used analytical techniques, such as x-ray energy dispersive spectroscopy (EDS), have failed to describe fully the localized changes in the boron and silicon contents across this region. Similar silicon-rich and boron-depleted zones were not found on corroded Savannah River Laboratory (SRL) borosilicate glasses, including SRL-EA and SRL-51, although they possessed similar-looking clay layers. This study demonstrates a new tool for examining the corroded surfaces of materials

  10. Silicon Quantum Dots for Quantum Information Processing

    Science.gov (United States)

    2013-11-01

    S. Lai, C. Tahan, A. Morello and A. S. Dzurak, Electron Spin lifetimes in multi-valley sil- icon quantum dots, S3NANO Winter School Few spin solid...lifetimes in multi-valley sil- icon quantum dots, International Workshop on Silicon Quantum Electronics, Grenoble, France, February 2012 (Poster). C...typically plunger gates), PMMA A5 is spun at 5000 rpm for 30 seconds, resulting in a 280 nm resist thickness. The resists are baked for 90 seconds at 180

  11. Valley of the unicorns: consumer genomics, venture capital and digital disruption

    OpenAIRE

    Hogarth, Stuart James

    2017-01-01

    Drawing on the sociology of expectations and sociology of conventions, this paper explores issues of worth and value in the bioeconomy, and the promissory character of contemporary capitalism. Arguing that the literature on biocapital has paid insufficient attention to geographical differentiation in capital accumulation strategies, this paper situates the consumer genomics firm 23andme in the entrepreneurial culture of Silicon Valley. The paper suggests that in Silicon Valley the relationshi...

  12. Groundwater quality and simulation of sources of water to wells in the Marsh Creek valley at the U.S. Geological Survey Northern Appalachian Research Laboratory, Tioga County, Pennsylvania

    Science.gov (United States)

    Risser, Dennis W.; Breen, Kevin J.

    2012-01-01

    This report provides a November 2010 snapshot of groundwater quality and an analysis of the sources of water to wells at the U.S. Geological Survey (USGS) Northern Appalachian Research Laboratory (NARL) near Wellsboro, Pennsylvania. The laboratory, which conducts fisheries research, currently (2011) withdraws 1,000 gallons per minute of high-quality groundwater from three wells completed in the glacial sand and gravel aquifer beneath the Marsh Creek valley; a fourth well that taps the same aquifer provides the potable supply for the facility. The study was conducted to document the source areas and quality of the water supply for this Department of Interior facility, which is surrounded by the ongoing development of natural gas from the Marcellus Shale. Groundwater samples were collected from the four wells used by the NARL and from two nearby domestic-supply wells. The domestic-supply wells withdraw groundwater from bedrock of the Catskill Formation. Samples were analyzed for major ions, nutrients, trace metals, radiochemicals, dissolved gases, and stable isotopes of oxygen and hydrogen in water and carbon in dissolved carbonate to document groundwater quality. Organic constituents (other than hydrocarbon gases) associated with hydraulic fracturing and other human activities were not analyzed as part of this assessment. Results show low concentrations of all constituents. Only radon, which ranged from 980 to 1,310 picocuries per liter, was somewhat elevated. These findings are consistent with the pristine nature of the aquifer in the Marsh Creek valley, which is the reason the laboratory was sited at this location. The sources of water and areas contributing recharge to wells were identified by the use of a previously documented MODFLOW groundwater-flow model for the following conditions: (1) withdrawals of 1,000 to 3,000 gallons per minute from the NARL wells, (2) average or dry hydrologic conditions, and (3) withdrawals of 1,000 gallons per minute from a new

  13. Silicon Solar Cell Turns 50

    Energy Technology Data Exchange (ETDEWEB)

    Perlin, J.

    2004-08-01

    This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

  14. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  15. Pathways to High-tech Valleys and Research Triangles

    NARCIS (Netherlands)

    Hulsink, W.; Dons, H.

    2008-01-01

    Silicon Valley and the industrial districts of Italy, where shared identity, superior skills, regional specialization and trust-based networking among local firms have produced dynamic and flexible ecosystems, are inspiring examples of the successful promotion of thriving technology and business

  16. Solar photovoltaic research and development program of the Air Force Aero Propulsion Laboratory. [silicon solar cell applicable to satellite power systems

    Science.gov (United States)

    Wise, J.

    1979-01-01

    Progress is reported in the following areas: laser weapon effects, solar silicon solar cell concepts, and high voltage hardened, high power system technology. Emphasis is placed on solar cells with increased energy conversion efficiency and radiation resistance characteristics for application to satellite power systems.

  17. San Joaquin Valley Aerosol Health Effects Research Center (SAHERC)

    Data.gov (United States)

    Federal Laboratory Consortium — At the San Joaquin Valley Aerosol Health Effects Center, located at the University of California-Davis, researchers will investigate the properties of particles that...

  18. Rift Valley Fever, Mayotte, 2007–2008

    Science.gov (United States)

    Giry, Claude; Gabrie, Philippe; Tarantola, Arnaud; Pettinelli, François; Collet, Louis; D’Ortenzio, Eric; Renault, Philippe; Pierre, Vincent

    2009-01-01

    After the 2006–2007 epidemic wave of Rift Valley fever (RVF) in East Africa and its circulation in the Comoros, laboratory case-finding of RVF was conducted in Mayotte from September 2007 through May 2008. Ten recent human RVF cases were detected, which confirms the indigenous transmission of RFV virus in Mayotte. PMID:19331733

  19. Valley polarization in bismuth

    Science.gov (United States)

    Fauque, Benoit

    2013-03-01

    The electronic structure of certain crystal lattices can contain multiple degenerate valleys for their charge carriers to occupy. The principal challenge in the development of valleytronics is to lift the valley degeneracy of charge carriers in a controlled way. In bulk semi-metallic bismuth, the Fermi surface includes three cigar-shaped electron valleys lying almost perpendicular to the high symmetry axis known as the trigonal axis. The in-plane mass anisotropy of each valley exceeds 200 as a consequence of Dirac dispersion, which drastically reduces the effective mass along two out of the three orientations. According to our recent study of angle-dependent magnetoresistance in bismuth, a flow of Dirac electrons along the trigonal axis is extremely sensitive to the orientation of in-plane magnetic field. Thus, a rotatable magnetic field can be used as a valley valve to tune the contribution of each valley to the total conductivity. As a consequence of a unique combination of high mobility and extreme mass anisotropy in bismuth, the effect is visible even at room temperature in a magnetic field of 1 T. Thus, a modest magnetic field can be used as a valley valve in bismuth. The results of our recent investigation of angle-dependent magnetoresistance in other semi-metals and doped semiconductors suggest that a rotating magnetic field can behave as a valley valve in a multi-valley system with sizeable mass anisotropy.

  20. Hybrid spin and valley quantum computing with singlet-triplet qubits.

    Science.gov (United States)

    Rohling, Niklas; Russ, Maximilian; Burkard, Guido

    2014-10-24

    The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over the valley state opens new possibilities for quantum information processing. Combining qubits encoded in the singlet-triplet subspace of spin and valley states allows for universal QC using a universal two-qubit gate directly provided by the exchange interaction. We show how spin and valley qubits can be separated in order to allow for single-qubit rotations.

  1. The Health Valley: Global Entrepreneurial Dynamics.

    Science.gov (United States)

    Dubuis, Benoit

    2014-12-01

    In the space of a decade, the Lake Geneva region has become the Health Valley, a world-class laboratory for discovering and developing healthcare of the future. Through visionary individuals and thanks to exceptional infrastructure this region has become one of the most dynamic in the field of innovation, including leading scientific research and exceptional actors for the commercialization of academic innovation to industrial applications that will improve the lives of patients and their families. Here follows the chronicle of a spectacular expansion into the Health Valley.

  2. Greening Turner Valley

    International Nuclear Information System (INIS)

    Byfield, M.

    2010-01-01

    This article discussed remedial activities undertaken in the Turner Valley. Remedial action in the valley must satisfy the financial concerns of engineers and investors as well as the environmental concerns of residents and regulators. Natural gas production in the Turner Valley began in 1914. The production practices were harmful and wasteful. Soil and water pollution was not considered a problem until recently. The impacts of cumulative effects and other pollution hazards are now being considered as part of many oil and gas environmental management programs. Companies know it is cheaper and safer to prevent pollutants from being released, and more efficient to clean them up quickly. Oil and gas companies are also committed to remediating historical problems. Several factors have simplified remediation plans in the Turner Valley. Area real estate values are now among the highest in Alberta. While the valley residents are generally friendly to the petroleum industry, strong communication with all stakeholders in the region is needed. 1 fig.

  3. Design/installation and structural integrity assessment under the Federal Facility Agreement for Bethel Valley Low-Level Waste Collection and Transfer System upgrade for Building 2026 (High Radiation Level Analytical Laboratory) and Building 2099 (Monitoring and Control Station) at Oak Ridge National Laboratory

    International Nuclear Information System (INIS)

    1994-10-01

    This document presents a Design/Installation and Structural Integrity Assessment for a replacement tank system for portions of the Bethel Valley Low Level Waste (LLW) System, located at the Oak Ridge Reservation, Oak Ridge, Tennessee. This issue of the assessment covers the design aspects of the replacement tank system, and certifies that the design has sufficient structural integrity and is acceptable for the storing or treating of hazardous and/or radioactive substances. The present issue identifies specific activities that must be completed during the fabrication, installation, and testing of the replacement tank system in order to provide assurance that the final installation complies with governing requirements. Portions of the LLW system are several decades old, or older, and do not comply with current environmental protection regulations. Several subsystems of the LLW system have been designated to receive a state-of-the-art replacement and refurbishment. One such subsystem serves Building 2026, the High Radiation Level Analytical Laboratory. This assessment focuses on the scope of work for the Building 2026 replacement LLW Collection and Transfer System, including the provision of a new Monitoring and Control Station (Building 2099) to receive, store, and treat (adjust pH) low level radioactive waste

  4. A 5-day method for determination of soluble silicon concentrations in nonliquid fertilizer materials using a sodium carbonate-ammonium nitrate extractant followed by visible spectroscopy with heteropoly blue analysis: single-laboratory validation.

    Science.gov (United States)

    Sebastian, Dennis; Rodrigues, Hugh; Kinsey, Charles; Korndörfer, Gaspar; Pereira, Hamilton; Buck, Guilherme; Datnoff, Lawrence; Miranda, Stephen; Provance-Bowley, Mary

    2013-01-01

    A 5-day method for determining the soluble silicon (Si) concentrations in nonliquid fertilizer products was developed using a sodium carbonate (Na2CO3)-ammonium nitrate (NH4NO3) extractant followed by visible spectroscopy with heteropoly blue analysis at 660 nm. The 5-Day Na2CO3-NH4NO3 Soluble Si Extraction Method can be applied to quantify the plant-available Si in solid fertilizer products at levels ranging from 0.2 to 8.4% Si with an LOD of 0.06%, and LOQ of 0.20%. This Si extraction method for fertilizers correlates well with plant uptake of Si (r2 = 0.96 for a range of solid fertilizers) and is applicable to solid Si fertilizer products including blended products and beneficial substances. Fertilizer materials can be processed as received using commercially available laboratory chemicals and materials at ambient laboratory temperatures. The single-laboratory validation of the 5-Day Na2CO3-NH4NO3 Soluble Si Extraction Method has been approved by The Association of American Plant Food Control Officials for testing nonliquid Si fertilizer products.

  5. A Laboratory Project on the Theory, Fabrication, and Characterization of a Silicon-on-Insulator Micro-Comb Drive Actuator with Fixed-Fixed Beams

    Science.gov (United States)

    Abbas, K.; Leseman, Z. C.

    2012-01-01

    A laboratory course on the theory, fabrication, and characterization of microelectromechanical systems (MEMS) devices for a multidisciplinary audience of graduate students at the University of New Mexico, Albuquerque, has been developed. Hands-on experience in the cleanroom has attracted graduate students from across the university's engineering…

  6. Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, T., E-mail: t.kobayashi@unsw.edu.au; Heijden, J. van der; House, M. G.; Hile, S. J.; Asshoff, P.; Simmons, M. Y.; Rogge, S. [Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney 2052 New South Wales (Australia); Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Vinet, M. [Université Grenoble-Alpes and CEA, LETI, MINATEC, 38000 Grenoble (France)

    2016-04-11

    We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO{sub 2} interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.

  7. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  8. Breathing Valley Fever

    Centers for Disease Control (CDC) Podcasts

    2014-02-04

    Dr. Duc Vugia, chief of the Infectious Diseases Branch in the California Department of Public Health, discusses Valley Fever.  Created: 2/4/2014 by National Center for Emerging and Zoonotic Infectious Diseases (NCEZID).   Date Released: 2/5/2014.

  9. Graphene valley pseudospin filter using an extended line defect

    Science.gov (United States)

    Gunlycke, Daniel; White, Carter

    2011-03-01

    Although graphene exhibits excellent electron and thermal transport properties, it does not have an intrinsic band gap, required to use graphene as a replacement material for silicon and other semiconductors in conventional electronics. The band structure of graphene with its two cones near the Fermi level, however, offers opportunities to develop non-traditional applications. One such avenue is to exploit the valley degeneracy in graphene to develop valleytronics. A central component in valleytronics is the valley filter, just as the spin filter is central in spintronics. Herein, we present a two-dimensional valley filter based on scattering of electrons and holes off a recently observed extended line defect [Nat. Nanotech.5, 326 (2010)] within graphene. The transmission probability depends strongly on the valley pseudospin and the angle of incidence of the incident quasiparticles. Quasiparticles arriving at the line defect at a high angle of incidence lead to a valley polarization of the transmitted beam that is near 100 percent. This work was supported by ONR, directly and through NRL.

  10. Completely independent electrical control of spin and valley in a silicene field effect transistor

    International Nuclear Information System (INIS)

    Zhai, Xuechao; Jin, Guojun

    2016-01-01

    One-atom-thick silicene is a silicon-based hexagonal-lattice material with buckled structure, where an electron fuses multiple degrees of freedom including spin, sublattice pseudospin and valley. We here demonstrate that a valley-selective spin filter (VSSF) that supports single-valley and single-spin transport can be realized in a silicene field effect transistor constructed of an npn junction, where an antiferromagnetic exchange field and a perpendicular electric field are applied in the p -doped region. The nontrivial VSSF property benefits from an electrically controllable state of spin-polarized single-valley Dirac cone. By reversing the electric field direction, the device can operate as a spin-reversed but valley-unreversed filter due to the dependence of band gap on spin and valley. Further, we find that all the possible spin-valley configurations of VSSF can be achieved just by tuning the electric field. Our findings pave the way to the realization of completely independent electrical control of spin and valley in silicene circuits. (paper)

  11. Sintering of nano crystalline α silicon carbide by doping with boron ...

    Indian Academy of Sciences (India)

    Unknown

    tions, they concluded that either reaction sintering or liquid phase .... α-6H silicon carbide single crystal by three different laboratories ... silicon carbide particles by the overall reaction .... layer displacement is likely to occur in such a manner as.

  12. 77 FR 33237 - Saline Valley Warm Springs Management Plan/Environmental Impact Statement, Death Valley National...

    Science.gov (United States)

    2012-06-05

    ... Valley Warm Springs Management Plan/Environmental Impact Statement, Death Valley National Park, Inyo... an Environmental Impact Statement for the Saline Valley Warm Springs Management Plan, Death Valley... analysis process for the Saline Valley Warm Springs Management Plan for Death Valley [[Page 33238...

  13. The California Valley grassland

    Science.gov (United States)

    Keeley, J.E.; Schoenherr, Allan A.

    1990-01-01

    Grasslands are distributed throughout California from Oregon to Baja California Norte and from the coast to the desert (Brown 1982) (Figure 1). This review will focus on the dominant formation in cismontane California, a community referred to as Valley Grassland (Munz 1959). Today, Valley Grassland is dominated by non-native annual grasses in genera such as Avena (wild oat), Bromus (brome grass), and Hordeum (barley), and is often referred to as the California annual grassland. On localized sites, native perennial bunchgrasses such as Stipa pultra (purple needle grass) may dominate and such sites are interpreted to be remnants of the pristine valley grassland. In northwestern California a floristically distinct formation of the Valley Grassland, known as Coast Prairie (Munz 1959) or Northern Coastal Grassland (Holland and Keil 1989) is recognized. The dominant grasses include many native perennial bunchgrasses in genera such as Agrostis, Calamagrostis, Danthonia, Deschampsia, Festuca, Koeleria and Poa (Heady et al. 1977). Non-native annuals do not dominate, but on some sites non-native perennials like Anthoxanthum odoratum may colonize the native grassland (Foin and Hektner 1986). Elevationally, California's grasslands extend from sea level to at leas 1500 m. The upper boundary is vague because montane grassland formations are commonly referred to as meadows; a community which Munz (1959) does not recognize. Holland and Keil (1989) describe the montane meadow as an azonal community; that is, a community restricted not so much to a particular climatic zone but rather controlled by substrate characteristics. They consider poor soil-drainage an over-riding factor in the development of montane meadows and, in contrast to grasslands, meadows often remain green through the summer drought. Floristically, meadows are composed of graminoids; Cyperaceae, Juncaceae, and rhizomatous grasses such as Agropyron (wheat grass). Some bunchgrasses, such as Muhlenbergia rigens, are

  14. Google, Facebook, the New Monopolies and Silicon Valley Ideologues

    Directory of Open Access Journals (Sweden)

    Enrico Pedemonte

    2016-07-01

    Full Text Available This article addresses the issues posed by the de facto monopolies created by digital platforms, focusing in particular on the cases of Google and Facebook. These two companies have assumed a dominant position in the fields of online research and of social networks. An analysis of their activity performed so far by the antitrust Authorities in the US and Europe shows the difficulty of dealing with these situations when applying methods which have traditionally been used to address questions of monopoly. The new element, compared to the past, is constituted by the huge data archives in possession of these companies: it’s the information on users to give Google and Facebook the ability to provide more competitive and customized services. Some scholars believe that it is necessary to regulate data collection, to redefine their property or even to oblige the dominant companies to share data with competitors. Others argue that “attention market” should be regulated, where a consumer’s attention is a scarce resource in the age of abundant information. However others believe that in the new world of the web and digital platforms the old categories of the economy are obsolete and monopolies are the natural and desirable outcome of the markets. The outcome of this battle will depend on the structure of economic power and the role of consumers in the near future. Video Extension Click on the thumbnail below for the video extension on YouTube.

  15. Bridging the Cyberspace Gap: Washington and Silicon Valley

    Science.gov (United States)

    2017-12-21

    Emerging Technologies and National Security and Director of the Digital and Cyberspace Policy Program at the Council on Foreign Relations . One of the...large public role in tracing cyberattacks to nation-states and other perpetrators. In addition, Alphabet, Amazon, Apple, Cisco, Facebook, IBM, Intel...2013 after a number of public disputes.1 In December 2015, a terrorist killed 14 people in San Bernardino, California. The Federal Bureau of

  16. Abstract of talk for Silicon Valley Linux Users Group

    Science.gov (United States)

    Clanton, Sam

    2003-01-01

    The use of Linux for research at NASA Ames is discussed.Topics include:work with the Atmospheric Physics branch on software for a spectrometer to be used in the CRYSTAL-FACE mission this summer; work on in the Neuroengineering Lab with code IC including an introduction to the extension of the human senses project,advantages with using linux for real-time biological data processing,algorithms utilized on a linux system, goals of the project,slides of people with Neuroscan caps on, and progress that has been made and how linux has helped.

  17. Silicon Valley Meets Biomedical Research in the Chan Zuckerberg Initiative.

    Science.gov (United States)

    Crow, Diana

    2017-05-18

    The Chan Zuckerberg Initiative, the philanthropy launched by Facebook CEO Mark Zuckerberg and his wife Priscilla Chan, drew attention with its stated goal of helping to "cure, manage, or treat all diseases" by the end of the century. They intend to do it through funding basic research and addressing gaps in biomedical technology. Copyright © 2017. Published by Elsevier Inc.

  18. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  19. Rift Valley Fever.

    Science.gov (United States)

    Hartman, Amy

    2017-06-01

    Rift Valley fever (RVF) is a severe veterinary disease of livestock that also causes moderate to severe illness in people. The life cycle of RVF is complex and involves mosquitoes, livestock, people, and the environment. RVF virus is transmitted from either mosquitoes or farm animals to humans, but is generally not transmitted from person to person. People can develop different diseases after infection, including febrile illness, ocular disease, hemorrhagic fever, or encephalitis. There is a significant risk for emergence of RVF into new locations, which would affect human health and livestock industries. Copyright © 2017 Elsevier Inc. All rights reserved.

  20. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift

    2015-06-01

    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

  1. Aburra Valley: Quo vadis?

    International Nuclear Information System (INIS)

    Hermelin, Michel

    2008-01-01

    These paper intents a brief description of the evolution that characterised natural risk prevention in the area surrounding the city of Medellin, Colombia, called the Aburra Valley. Both the lithological and structural composition of the Valle and its topographic and climatic conditions contribute to the abundance of destructive natural phenomena as earthquakes, slope movements, flash floods and, in a lower proportion, to floods. The population increase, which reaches now 3.5 millions inhabitants and the frequent occupation of sites exposed to natural hazards have resulted in numerous disasters. At present two entities called SIMPAD and DAPARD work on risk prevention, on city and department scale respectively. The amount of knowledge about physical environment is considered to be insufficient, together with regulations which should direct land use in accordance to restrictions related to natural hazards. Several seminars on this topic have already been carried out and the organisers of the present one, destined to commemorate the twentieth anniversary of the Villatina disaster, should make the decision to meet each two years. Furthermore, the creation of a permanent commission dedicated to study past events, to foster information broadcasting and to seek a better knowledge of the Aburra Valley, should be considered

  2. University Crystalline Silicon Photovoltaics Research and Development

    Energy Technology Data Exchange (ETDEWEB)

    Ajeet Rohatgi; Vijay Yelundur; Abasifreke Ebong; Dong Seop Kim

    2008-08-18

    The overall goal of the program is to advance the current state of crystalline silicon solar cell technology to make photovoltaics more competitive with conventional energy sources. This program emphasizes fundamental and applied research that results in low-cost, high-efficiency cells on commercial silicon substrates with strong involvement of the PV industry, and support a very strong photovoltaics education program in the US based on classroom education and hands-on training in the laboratory.

  3. Single-electron regime and Pauli spin blockade in a silicon metal-oxide-semiconductor double quantum dot

    Science.gov (United States)

    Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel

    2015-03-01

    Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  4. Valley development on Hawaiian volcanoes

    International Nuclear Information System (INIS)

    Baker, V.R.; Gulick, V.C.

    1987-01-01

    Work in progress on Hawaiian drainage evolution indicates an important potential for understanding drainage development on Mars. Similar to Mars, the Hawaiian valleys were initiated by surface runoff, subsequently enlarged by groundwater sapping, and eventually stabilized as aquifers were depleted. Quantitative geomorphic measurements were used to evaluate the following factors in Hawaiian drainage evolution: climate, stream processes, and time. In comparing regions of similar climate, drainage density shows a general increase with the age of the volcani island. With age and climate held constant, sapping dominated valleys, in contrast to runoff-dominated valleys, display the following: lower drainage densities, higher ratios of valley floor width to valley height, and more positive profile concavities. Studies of stream junction angles indicate increasing junction angles with time on the drier leeward sides of the major islands. The quantitative geomorphic studies and earlier field work yielded important insights for Martian geomorphology. The importance of ash mantling in controlling infiltration on Hawaii also seems to apply to Mars. The Hawaiian valley also have implications for the valley networks of Martian heavily cratered terrains

  5. A data acquisition system for silicon microstrip detectors

    International Nuclear Information System (INIS)

    Adriani, O.; Civinini, C.; D'Alessandro, R.; Meschini, M.; Pieri, M.; Castellini, G.

    1998-01-01

    Following initial work on the readout of the L3 silicon microvertex detector, the authors have developed a complete data acquisition system for silicon microstrip detectors for use both in their home institute and at the various test beam facilities at the CERN laboratory. The system uses extensive decoupling schemes allowing a fully floating connection to the detector. This feature has many advantages especially in the readout of the latest double-sided silicon microstrip detectors

  6. Silicon Telescope Detectors

    CERN Document Server

    Gurov, Yu B; Sandukovsky, V G; Yurkovski, J

    2005-01-01

    The results of research and development of special silicon detectors with a large active area ($> 8 cm^{2}$) for multilayer telescope spectrometers (fulfilled in the Laboratory of Nuclear Problems, JINR) are reviewed. The detector parameters are listed. The production of totally depleted surface barrier detectors (identifiers) operating under bias voltage two to three times higher than depletion voltage is described. The possibility of fabrication of lithium drifted counters with a very thin entrance window on the diffusion side of the detector (about 10--20 $\\mu$m) is shown. The detector fabrication technique has allowed minimizing detector dead regions without degradation of their spectroscopic characteristics and reliability during long time operation in charge particle beams.

  7. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  8. West Valley facility spent fuel handling, storage, and shipping experience

    International Nuclear Information System (INIS)

    Bailey, W.J.

    1990-11-01

    The result of a study on handling and shipping experience with spent fuel are described in this report. The study was performed by Pacific Northwest Laboratory (PNL) and was jointly sponsored by the US Department of Energy (DOE) and the Electric Power Research Institute (EPRI). The purpose of the study was to document the experience with handling and shipping of relatively old light-water reactor (LWR) fuel that has been in pool storage at the West Valley facility, which is at the Western New York Nuclear Service Center at West Valley, New York and operated by DOE. A subject of particular interest in the study was the behavior of corrosion product deposits (i.e., crud) deposits on spent LWR fuel after long-term pool storage; some evidence of crud loosening has been observed with fuel that was stored for extended periods at the West Valley facility and at other sites. Conclusions associated with the experience to date with old spent fuel that has been stored at the West Valley facility are presented. The conclusions are drawn from these subject areas: a general overview of the West Valley experience, handling of spent fuel, storing of spent fuel, rod consolidation, shipping of spent fuel, crud loosening, and visual inspection. A list of recommendations is provided. 61 refs., 4 figs., 5 tabs

  9. Christmas Valley Renewable Energy Assessment

    Energy Technology Data Exchange (ETDEWEB)

    Del Mar, Robert [Oregon Department of Energy, Salem, OR (United States)

    2017-05-22

    In partnership with the Oregon Military Department, the Department of Energy used the award to assess and evaluate renewable resources in a 2,622-acre location in Lake County, central Oregon, leading to future development of up to 200 MW of solar electricity. In partnership with the Oregon Military Department, the Department of Energy used the award to assess and evaluate renewable resources in a 2,622-acre location in Lake County, central Oregon, leading to future development of up to 200 MW of solar electricity. The Oregon Military Department (Military) acquired a large parcel of land located in south central Oregon. The land was previously owned by the US Air Force and developed for an Over-the-Horizon Backscatter Radar Transmitter Facility, located about 10 miles east of the town of Christmas Valley. The Military is investigating a number of uses for the site, including Research and Development (R&D) laboratory, emergency response, military operations, developing renewable energy and related educational programs. One of the key potential uses would be for a large scale solar photovoltaic power plant. This is an attractive use because the site has excellent solar exposure; an existing strong electrical interconnection to the power grid; and a secure location at a moderate cost per acre. The project objectives include: 1. Site evaluation 2. Research and Development (R&D) facility analysis 3. Utility interconnection studies and agreements 4. Additional on-site renewable energy resources analysis 5. Community education, outreach and mitigation 6. Renewable energy and emergency readiness training program for veterans

  10. Analytical laboratory and mobile sampling platform

    International Nuclear Information System (INIS)

    Stetzenbach, K.; Smiecinski, A.

    1996-01-01

    This is the final report for the Analytical Laboratory and Mobile Sampling Platform project. This report contains only major findings and conclusions resulting from this project. Detailed reports of all activities performed for this project were provided to the Project Office every quarter since the beginning of the project. This report contains water chemistry data for samples collected in the Nevada section of Death Valley National Park (Triangle Area Springs), Nevada Test Site springs, Pahranagat Valley springs, Nevada Test Site wells, Spring Mountain springs and Crater Flat and Amargosa Valley wells

  11. Design/installation and structural integrity assessment under the Federal Facility Agreement for Bethel Valley low-level waste collection and transfer system upgrade for Building 2026 (High Radiation Level Analytical Laboratory) and Building 2099 (Monitoring and Control Station) at Oak Ridge National Laboratory

    International Nuclear Information System (INIS)

    1994-11-01

    This document presents a Design/Installation and Structural Integrity Assessment for a replacement tank system for portions of the Bethel Valley Low-Level Waste (LLW) System, located at the Oak Ridge Reservation, Oak Ridge, Tennessee. This issue of the assessment covers the design aspects of the replacement tank system, and certifies that the design has sufficient structural integrity and is acceptable for the storing or treating of hazardous and/or radioactive substances. This document will be reissued at a future date and will then include the assessment of the installation of the replacement tank system. The present issue identifies specific activities that must be completed during the fabrication, installation, and testing of the replacement tank system in order to provide assurance that the final installation complies with governing requirements

  12. The silicon vertex tracker for star and future applications of silicon drift detectors

    International Nuclear Information System (INIS)

    Bellwied, Rene

    2001-01-01

    The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

  13. The Drentsche Aa valley system

    International Nuclear Information System (INIS)

    Gans, W. de.

    1981-01-01

    This thesis is composed of five papers concerned with Late Quaternary geology and geomorphology of the Aa valley system. The correlation and chronostratigraphic position of the layers have been established by radiocarbon dating. (Auth.)

  14. Design/installation and structural integrity assessment of Bethel Valley low-level waste collection and transfer system upgrade for Building 3092 (Central Off-Gas Scrubber Facility) at Oak Ridge National Laboratory

    International Nuclear Information System (INIS)

    1995-01-01

    This document describes and assesses planned modifications to be made to the Building 3092 Central Off-Gas Scrubber Facility of the Oak Ridge National Laboratory, Oak Ridge, Tennessee. The modifications are made in responsible to the requirements of 40CFR264 Subpart J, relating to environmental protection requirements for buried tank systems. The modifications include the provision of a new scrubber recirculation tank in a new, below ground, lines concrete vault, replacing and existing recirculation sump that does not provide double containment. A new buried, double contained pipeline is provided to permit discharge of spent scrubber recirculation fluid to the Central Waste Collection Header. The new vault, tank, and discharge line are provided with leak detection and provisions to remove accumulated liquid. New scrubber recirculation pumps, piping, and accessories are also provided. This assessment concludes that the planned modifications comply with applicable requirements of 40CFR264 Subpart J, as set forth in Appendix F to the Federal Facility Agreement, Docket No. 89-04-FF, covering the Oak Ridge Reservation

  15. Design/Installation and Structural Integrity Assessment of Bethel Valley Low-Level Waste collection and transfer system upgrade for Building 3092 (central off-gas scrubber facility) at Oak Ridge National Laboratory

    International Nuclear Information System (INIS)

    1994-10-01

    This document describes and assesses planned modifications to be made to the Building 3092 Central Off-Gas Scrubber Facility of the Oak Ridge National Laboratory, Oak Ridge, Tennessee. The modifications are made in response to the requirements of 40CFR264 Subpart J, relating to environmental protection requirements for buried tank systems. The modifications include the provision of a new scrubber recirculation tank in a new, below ground, lined concrete vault, replacing an existing recirculation sump that does not provide double containment. A new buried, double contained pipeline is provided to permit discharge of spent scrubber recirculation fluid to the Central Waste Collection Header. The new vault, tank, and discharge line are provided with leak detection and provisions to remove accumulated liquid. Ne scrubber recirculation pumps, piping, and accessories are also provided. This assessment concludes that the planned modifications comply with applicable requirements of 40CFR264 Subpart J, as set forth in Appendix F to the Federal Facility Agreement, Docket No. 89-04-FF, covering the Oak Ridge Reservation. A formal design certification statement is included herein on Page 53, a certification covering the installation shall be executed prior to placing the modified facility into service

  16. Design/Installation and Structural Integrity Assessment of the Bethel Valley Low-Level Waste Collection and Transfer System Upgrade for Building 3544 (Process Waste Treatment Plant) at Oak Ridge National Laboratory, Oak Ridge, Tennessee

    International Nuclear Information System (INIS)

    1996-12-01

    This document describes and assesses planned modifications to be made to the Building 3544 Process Waste Treatment Plant of the Oak Ridge National Laboratory, Oak Ridge, Tennessee. The modifications are made in response to the requirements of the Federal Facility Agreement (FFA) relating to environmental protection requirements for tank systems. The modifications include the provision of a new double contained LLW line replacing an existing buried line that does not provide double containment. This new above ground, double contained pipeline is provided to permit discharge of treated process waste fluid to an outside truck loading station. The new double contained discharge line is provided with leak detection and provisions to remove accumulated liquid. An existing LLW transfer pump, concentrated waste tank, piping and accessories are being utilized, with the addition of a secondary containment system comprised of a dike, a chemically resistant internal coating on the diked area surfaces and operator surveillance on a daily basis for the diked area leak detection. This assessment concludes that the planned modifications comply with applicable requirements of Federal Facility Agreement, Docket No. 89-04-FF, covering the Oak Ridge Reservation

  17. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  18. Subsurface oxidation for micropatterning silicon (SOMS).

    Science.gov (United States)

    Zhang, Feng; Sautter, Ken; Davis, Robert C; Linford, Matthew R

    2009-02-03

    Here we present a straightforward patterning technique for silicon: subsurface oxidation for micropatterning silicon (SOMS). In this method, a stencil mask is placed above a silicon surface. Radio-frequency plasma oxidation of the substrate creates a pattern of thicker oxide in the exposed regions. Etching with HF or KOH produces very shallow or much higher aspect ratio features on silicon, respectively, where patterning is confirmed by atomic force microscopy, scanning electron microscopy, and optical microscopy. The oxidation process itself is studied under a variety of reaction conditions, including higher and lower oxygen pressures (2 and 0.5 Torr), a variety of powers (50-400 W), different times and as a function of reagent purity (99.5 or 99.994% oxygen). SOMS can be easily executed in any normal chemistry laboratory with a plasma generator. Because of its simplicity, it may have industrial viability.

  19. The LHCb Silicon Inner Tracker

    International Nuclear Information System (INIS)

    Sievers, P.

    2002-01-01

    A silicon strip detector has been adopted as baseline technology for the LHCb Inner Tracker system. It consists of nine planar stations covering a cross-shaped area around the LHCb beam pipe. Depending on the final layout of the stations the sensitive surface of the Inner Tracker will be of the order of 14 m 2 . Ladders have to be 22 cm long and the pitch of the sensors should be as large as possible in order to reduce costs of the readout electronics. Major design criteria are material budget, short shaping time and a moderate spatial resolution of about 80 μm. After an introduction on the requirements of the LHCb Inner Tracker we present a description and characterization of silicon prototype sensors. First, laboratory and test beam results are discussed

  20. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  1. Bioassay Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Bioassay Laboratory is an accredited laboratory capable of conducting standardized and innovative environmental testing in the area of aquatic ecotoxicology. The...

  2. HYDROMECHANICS LABORATORY

    Data.gov (United States)

    Federal Laboratory Consortium — Naval Academy Hydromechanics LaboratoryThe Naval Academy Hydromechanics Laboratory (NAHL) began operations in Rickover Hall in September 1976. The primary purpose of...

  3. Radiation damage studies for the D0 silicon detector

    International Nuclear Information System (INIS)

    Lehner, F.

    2004-01-01

    We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

  4. Radiation damage studies for the DOe silicon detector

    International Nuclear Information System (INIS)

    Lehner, Frank

    2004-01-01

    We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

  5. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  6. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  7. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  8. Phosphorus {delta}-doped silicon: mixed-atom pseudopotentials and dopant disorder effects

    Energy Technology Data Exchange (ETDEWEB)

    Carter, Damien J; Marks, Nigel A [Nanochemistry Research Institute, Curtin University, PO Box U1987, Perth WA 6845 (Australia); Warschkow, Oliver; McKenzie, David R, E-mail: d.carter@curtin.edu.au [Centre for Quantum Computer Technology, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia)

    2011-02-11

    Within a full density functional theory framework we calculate the band structure and doping potential for phosphorus {delta}-doped silicon. We compare two different representations of the dopant plane; pseudo-atoms in which the nuclear charge is fractional between silicon and phosphorus, and explicit arrangements employing distinct silicon and phosphorus atoms. While the pseudo-atom approach offers several computational advantages, the explicit model calculations differ in a number of key points, including the valley splitting, the Fermi level and the width of the doping potential. These findings have implications for parameters used in device modelling.

  9. Reporting on nuclear power: the Tennessee Valley case

    International Nuclear Information System (INIS)

    Shapley, D.

    1977-01-01

    The Tennessee Valley Authority (TVA), by deciding to have 90 percent of its new generating capacity nuclear, has made the valley a testing ground for civilian nuclear power, but valley newspapers have not provided consumers with enough information on either the pros or cons. A 1975 Browns Ferry plant fire, the most serious in the history of the civilian nuclear industry, prompted some nuclear critics to question TVA's competence to plan and manage the program. Newspapers carried wire-service stories of the fire, while their editorials gave strong support to TVA and the effort to reopen the plant. Valley newspapers have traditionally favored TVA as a powerful economic and political force which has brought many benefits. Local pride in the Oak Ridge Laboratory and plant facilities and the Federal fast-breeder reactor project headquarters also enhanced the positive attitude of the press, which tended to report details but not question nuclear safety or TVA ability. Newspapers have also failed to question TVA's claims that rates will decline as nuclear plants begin operating. A review of relevant news stories during the 1975--1976 period addresses the press coverage and notes its failure to question whether power demands justify TVA's plant construction program. Knowledgeable consultants are available to provide information on the issues, while editors are advised to give comprehensive, critical coverage and avoid promotion

  10. Commercialization of Los Alamos National Laboratory technologies via small businesses. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Brice, R.; Cartron, D.; Rhyne, T.; Schulze, M.; Welty, L.

    1997-06-01

    Over the past decade, numerous companies have been formed to commercialize research results from leading U.S. academic and research institutions. Emerging small businesses in areas such as Silicon Valley, Boston`s Route 128 corridor, and North Carolina`s Research Triangle have been especially effective in moving promising technologies from the laboratory bench to the commercial marketplace--creating new jobs and economic expansion in the process. Unfortunately, many of the U.S. national laboratories have not been major participants in this technology/commercialization activity, a result of a wide variety of factors which, until recently, acted against successful commercialization. This {open_quotes}commercialization gap{close_quotes} exists partly due to a lack, within Los Alamos in particular and the DOE in general, of in-depth expertise and experience in such business areas as new business development, securities regulation, market research and the determination of commercial potential, the identification of entrepreneurial management, marketing and distribution, and venture capital sources. The immediate consequence of these factors is the disappointingly small number of start-up companies based on technologies from Los Alamos National Laboratory that have been attempted, the modest financial return Los Alamos has received from these start-ups, and the lack of significant national recognition that Los Alamos has received for creating and commercializing these technologies.

  11. Silicon Photomultiplier charaterization

    Science.gov (United States)

    Munoz, Leonel; Osornio, Leo; Para, Adam

    2014-03-01

    Silicon Photo Multiples (SiPM's) are relatively new photon detectors. They offer many advantages compared to photo multiplier tubes (PMT's) such as insensitivity to magnetic field, robustness at varying lighting levels, and low cost. The SiPM output wave forms are poorly understood. The experiment conducted collected waveforms of responses of Hamamatsu SiPM to incident laser pulse at varying temperatures and bias voltages. Ambient noise was characterized at all temperatures and bias voltages by averaging the waveforms. Pulse shape of the SiPM response was determined under different operating conditions: the pulse shape is nearly independent of the bias voltage but exhibits strong variation with temperature, consistent with the temperature variation of the quenching resistor. Amplitude of responses of the SiPM to low intensity laser light shows many peaks corresponding to the detection of 1,2,3 etc. photons. Amplitude of these pulses depends linearly on the bias voltage, enabling determination of the breakdown voltage at each temperature. Poisson statistics has been used to determine the average number of detected photons at each operating conditions. Department of Education Grant No. P0315090007 and the Department of Energy/ Fermi National Accelerator Laboratory.

  12. Valley formation by groundwater seepage, pressurized groundwater outbursts and crater-lake overflow in flume experiments with implications for Mars

    Science.gov (United States)

    Marra, Wouter A.; Braat, Lisanne; Baar, Anne W.; Kleinhans, Maarten G.

    2014-04-01

    Remains of fluvial valleys on Mars reveal the former presence of water on the surface. However, the source of water and the hydrological setting is not always clear, especially in types of valleys that are rare on Earth and where we have limited knowledge of the processes involved. We investigated three hydrological scenarios for valley formation on Mars: hydrostatic groundwater seepage, release of pressurized groundwater and crater-lake overflow. Using physical modeling in laboratory experiments and numerical hydrological modeling we quantitatively studied the morphological development and processes involved in channel formation that result from these different sources of water in unconsolidated sediment. Our results show that valleys emerging from seeping groundwater by headward erosion form relatively slowly as fluvial transport takes place in a channel much smaller than the valley. Pressurized groundwater release forms a characteristic source area at the channel head by fluidization processes. This head consist of a pit in case of superlithostatic pressure and may feature small radial channels and collapse features. Valleys emerging from a crater-lake overflow event develop quickly in a run-away process of rim erosion and discharge increase. The valley head at the crater outflow point has a converging fan shape, and the rapid incision of the rim leaves terraces and collapse features. Morphological elements observed in the experiments can help in identifying the formative processes on Mars, when considerations of experimental scaling and lithological characteristics of the martian surface are taken into account. These morphological features might reveal the associated hydrological settings and formative timescales of a valley. An estimate of formative timescale from sediment transport is best based on the final channel dimensions for groundwater seepage valleys and on the valley dimensions for pressurized groundwater release and crater-lake overflow valleys. Our

  13. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  14. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  15. Daytime wind valleys adjacent to the Great Salt Lake

    Energy Technology Data Exchange (ETDEWEB)

    Stone, G.L. (Los Alamos National Lab., NM (USA)); Hoard, D.E. (Amparo Corp., Santa Fe, NM (USA))

    1990-01-01

    In 1986 Los Alamos National Laboratory was engaged by the US Army to study the meteorological aspects of emergency preparedness at several sites where toxic materials are stored and handled. The project included a series of tracer and meteorological field experiments in the vicinity of the Tooele Army Depot. These experiments generated a large data set for validating numerical simulations and for empirical analyses of the local meteorology. This paper discusses the main characteristics of the daytime, up-valley flow at the Utah site, including frequency of occurrence, horizontal and vertical structure, and temporal evolution. Some parameters controlling the variability in onset time for up-valley flow are identified, and an empirical forecasting scheme is discussed. 16 refs., 7 figs.

  16. Photometrics Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — Purpose:The Photometrics Laboratory provides the capability to measure, analyze and characterize radiometric and photometric properties of light sources and filters,...

  17. Blackroom Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Enables evaluation and characterization of materials ranging from the ultraviolet to the longwave infrared (LWIR).DESCRIPTION: The Blackroom Laboratory is...

  18. Light-Induced Degradation of Thin Film Silicon Solar Cells

    International Nuclear Information System (INIS)

    Hamelmann, F U; Weicht, J A; Behrens, G

    2016-01-01

    Silicon-wafer based solar cells are still domination the market for photovoltaic energy conversion. However, most of the silicon is used only for mechanical stability, while only a small percentage of the material is needed for the light absorption. Thin film silicon technology reduces the material demand to just some hundred nanometer thickness. But even in a tandem stack (amorphous and microcrystalline silicon) the efficiencies are lower, and light-induced degradation is an important issue. The established standard tests for characterisation are not precise enough to predict the performance of thin film silicon solar cells under real conditions, since many factors do have an influence on the degradation. We will show some results of laboratory and outdoor measurements that we are going to use as a base for advanced modelling and simulation methods. (paper)

  19. Better building of valley fills

    Energy Technology Data Exchange (ETDEWEB)

    Chironis, N.P.

    1980-03-01

    Current US regulations for building valley fills or head of hollow fills to hold excess spoil resulting from contour mining are meeting with considerable opposition, particularly from operators in steep-slope areas. An alternative method has been submitted to the Office of Surface Mining by Virgina. Known as the zoned concept method, it has already been used successfully in building water-holding dams and coal refuse embankments on sloping terrain. The ways in which drainage and seepage are managed are described.

  20. Stardust in Laboratory & Evolution of Early Solar System f y S Sy

    Indian Academy of Sciences (India)

    kkmarhas

    2008-09-13

    Sep 13, 2008 ... Picture book of presolar grains! Graphite grains. Silicon carbide. Corundum. 500nm. Spinel grains. Silicate grain. Silicon Nitride. Spinel grains. Silicate grain. Silicon Nitride. Presolar Grains &. Evolution of Early Solar System. Kuljeet K. Marhas. 13th September 2008. Physical Research Laboratory ...

  1. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  2. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  3. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  4. Process development for high-efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gee, J.M.; Basore, P.A.; Buck, M.E.; Ruby, D.S.; Schubert, W.K.; Silva, B.L.; Tingley, J.W.

    1991-12-31

    Fabrication of high-efficiency silicon solar cells in an industrial environment requires a different optimization than in a laboratory environment. Strategies are presented for process development of high-efficiency silicon solar cells, with a goal of simplifying technology transfer into an industrial setting. The strategies emphasize the use of statistical experimental design for process optimization, and the use of baseline processes and cells for process monitoring and quality control. 8 refs.

  5. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  6. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  7. Year 2000 estimated population dose for the Tennessee Valley region

    International Nuclear Information System (INIS)

    Fletcher, J.F.; Strauch, S.; Siegel, G.R.; Witherspoon, J.P.

    1976-01-01

    A comprehensive study has recently been completed of the potential regional radiological dose in the Tennessee and Cumberland river basins in the year 2000, resulting from the operation of nuclear facilities. This study, sponsored jointly by the U.S. Energy Research and Development Administration and the Tennessee Valley Authority, was performed by the Hanford Engineering Development Laboratory (HEDL), the Oak Ridge National Laboratory (ORNL), and the Atmospheric Turbulence and Diffusion Laboratory (ATDL). This study considered the operation in the year 2000 of 33,000 MWe of nuclear capacity within the study area, and of 110,000 MWe in adjacent areas, together with supporting nuclear fuel fabrication and reprocessing facilities. Air and water transport models used and methods for calculating nuclide concentrations on the ground are discussed

  8. California's restless giant: the Long Valley Caldera

    Science.gov (United States)

    Hill, David P.; Bailey, Roy A.; Hendley, James W.; Stauffer, Peter H.; Marcaida, Mae

    2014-01-01

    Scientists have monitored geologic unrest in the Long Valley, California, area since 1980. In that year, following a swarm of strong earthquakes, they discovered that the central part of the Long Valley Caldera had begun actively rising. Unrest in the area persists today. The U.S. Geological Survey (USGS) continues to provide the public and civil authorities with current information on the volcanic hazard at Long Valley and is prepared to give timely warnings of any impending eruption.

  9. The status of silicon ribbon growth technology for high-efficiency silicon solar cells

    Science.gov (United States)

    Ciszek, T. F.

    1985-01-01

    More than a dozen methods have been applied to the growth of silicon ribbons, beginning as early as 1963. The ribbon geometry has been particularly intriguing for photovoltaic applications, because it might provide large area, damage free, nearly continuous substrates without the material loss or cost of ingot wafering. In general, the efficiency of silicon ribbon solar cells has been lower than that of ingot cells. The status of some ribbon growth techniques that have achieved laboratory efficiencies greater than 13.5% are reviewed, i.e., edge-defined, film-fed growth (EFG), edge-supported pulling (ESP), ribbon against a drop (RAD), and dendritic web growth (web).

  10. Small martian valleys: Pristine and degraded morphology

    International Nuclear Information System (INIS)

    Baker, V.R.; Partridge, J.B.

    1986-01-01

    The equatorial heavily cratered uplands of Mars are dissected by two classes of small valleys that are intimately associated in compound networks. Pristine valleys with steep valley walls preferentially occupy downstream portions of compound basins. Degraded valleys with eroded walls are laterally more extensive and have higher drainage densities than pristine valleys. Morphometric and crater-counting studies indicate that relatively dense drainage networks were emplaced on Mars during the heavy bombardment about 4.0 b.y. ago. Over a period of approximately 10 8 years, these networks were degraded and subsequently invaded by headwardly extending pristine valleys. The pristine valleys locally reactivated the compound networks, probably through sapping processes dependent upon high water tables. Fluvial activity in the heavily cratered uplands generally ceased approximately 3.8--3.9 b.y. ago, coincident with the rapid decline in cratering rates. The relict compound valleys on Mars are morphometrically distinct from most terrestrial drainage systems. The differences might be caused by a Martian valley formation episode characterized by hyperaridity, by inadequate time for network growth, by very permeable rock types, or by a combination of factors

  11. EPA Region 1 - Valley Depth in Meters

    Science.gov (United States)

    Raster of the Depth in meters of EPA-delimited Valleys in Region 1.Valleys (areas that are lower than their neighbors) were extracted from a Digital Elevation Model (USGS, 30m) by finding the local average elevation, subtracting the actual elevation from the average, and selecting areas where the actual elevation was below the average. The landscape was sampled at seven scales (circles of 1, 2, 4, 7, 11, 16, and 22 km radius) to take into account the diversity of valley shapes and sizes. Areas selected in at least four scales were designated as valleys.

  12. A landscape scale valley confinement algorithm: Delineating unconfined valley bottoms for geomorphic, aquatic, and riparian applications

    Science.gov (United States)

    David E. Nagel; John M. Buffington; Sharon L. Parkes; Seth Wenger; Jaime R. Goode

    2014-01-01

    Valley confinement is an important landscape characteristic linked to aquatic habitat, riparian diversity, and geomorphic processes. This report describes a GIS program called the Valley Confinement Algorithm (VCA), which identifies unconfined valleys in montane landscapes. The algorithm uses nationally available digital elevation models (DEMs) at 10-30 m resolution to...

  13. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  14. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  15. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  16. Durability testing with West Valley borosilicate glass composition- Phase II

    International Nuclear Information System (INIS)

    Macedo, P.B.; Finger, S.M.; Barkatt, A.A.; Pegg, I.L.; Feng, X.; Freeborn, W.P.

    1988-06-01

    This report presents the research performed by the Catholic University of America Vitreous State Laboratory (VSL) during FY 1987 in support of the West Valley Demonstration Project (WVDP) nuclear waste vitrification process. A principal objective of this work is the optimization of the glass composition be used for the vitrification of the liquid high-level waste generated at West Valley during nuclear fuel reprocessing. This report discusses (1) the experimental investigations to optimize the reference glass composition (the current leading candidates are WVCM-50 and ATM-10) for the WVDP vitrification process; (2) the systematic experimental investigation performed to determine the effects of compositional variations in WVCM-50 and WV-205 reference glasses on their viscosity and durability (including initial results of long-term leach tests of WVCM-50 under repository conditions); (3) the development of short-time and predictive leach tests; (4) the development of a process model for the West Valley vitrification process which predicts the range of glass compositions which may be encountered during normal operations and the effects of deviations in process control parameters; and (5) the development of product models for predicting the durability and viscosity of nuclear waste glasses

  17. Site characterization at the Rabbit Valley Geophysical Performance Evaluation Range

    International Nuclear Information System (INIS)

    Koppenjan, S.; Martinez, M.

    1994-01-01

    The United States Department of Energy (US DOE) is developing a Geophysical Performance Evaluation Range (GPER) at Rabbit Valley located 30 miles west of Grand Junction, Colorado. The purpose of the range is to provide a test area for geophysical instruments and survey procedures. Assessment of equipment accuracy and resolution is accomplished through the use of static and dynamic physical models. These models include targets with fixed configurations and targets that can be re-configured to simulate specific specifications. Initial testing (1991) combined with the current tests at the Rabbit Valley GPER will establish baseline data and will provide performance criteria for the development of geophysical technologies and techniques. The US DOE's Special Technologies Laboratory (STL) staff has conducted a Ground Penetrating Radar (GPR) survey of the site with its stepped FM-CW GPR. Additionally, STL contracted several other geophysical tests. These include an airborne GPR survey incorporating a ''chirped'' FM-CW GPR system and a magnetic survey with a surfaced-towed magnetometer array unit Ground-based and aerial video and still frame pictures were also acquired. STL compiled and analyzed all of the geophysical maps and created a site characterization database. This paper discusses the results of the multi-sensor geophysical studies performed at Rabbit Valley and the future plans for the site

  18. An rf communications system for the West Valley transfer cart

    International Nuclear Information System (INIS)

    Crutcher, R.I.; Moore, M.R.

    1993-01-01

    A prototype radio frequency communications system for digital data was designed and built by Oak Ridge National Laboratory for use in controlling the vitrification facility transfer cart at the West Valley Nuclear Services facility in New York. The communications system provides bidirectional wireless data transfer between the operator control station and the material transfer cart. The system was designed to operate in radiation fields of 10 4 R/h while withstanding a total integrated dose of 10 7 R of gamma radiation. Implementation of antenna spatial diversity, automatic gain control, and spectral processing improves operation in the reflective environment of the metal-lined reprocessing cells

  19. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  20. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  1. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  2. Silicon integrated circuit process

    International Nuclear Information System (INIS)

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  3. Silicon integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  4. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  5. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  6. West Valley Demonstration Project, West Valley, New York: Annual report

    International Nuclear Information System (INIS)

    1989-01-01

    Under the West Valley Demonstration Project Act, Public Law 96-368, liquid high-level radioactive waste stored at the Western New York Nuclear Services Center, West Valley, New York, that resulted from spent nuclear fuel reprocessing operations conducted between 1966 and 1972, is to be solidified in borosilicate glass and transported to a federal repository for geologic disposal. A major milestone was reached in May 1988 when the Project began reducing the volume of the liquid high-level waste. By the end of 1988, approximately 15 percent of the initial inventory had been processed into two waste streams. The decontaminated low-level liquid waste is being solidified in cement. The high-level waste stream is being stored in an underground tank pending its incorporation into borosilicate glass. Four tests of the waste glass melter system were completed. These tests confirmed equipment operability, control system reliability, and provided samples of waste glass for durability testing. In mid-1988, the Department validated an integrated cost and schedule plan for activities required to complete the production of the waste borosilicate glass. Design of the radioactive Vitrification Facility continued

  7. The Pocatello Valley, Idaho, earthquake

    Science.gov (United States)

    Rogers, A. M.; Langer, C.J.; Bucknam, R.C.

    1975-01-01

    A Richter magnitude 6.3 earthquake occurred at 8:31 p.m mountain daylight time on March 27, 1975, near the Utah-Idaho border in Pocatello Valley. The epicenter of the main shock was located at 42.094° N, 112.478° W, and had a focal depth of 5.5 km. This earthquake was the largest in the continental United States since the destructive San Fernando earthquake of February 1971. The main shock was preceded by a magnitude 4.5 foreshock on March 26. 

  8. Radwaste challenge at Beaver Valley

    International Nuclear Information System (INIS)

    Anon.

    1984-01-01

    Duquesne Light Company met the problem of accumulating low-level radioactive waste at its Beaver Valley nuclear plant with an aggressive program to reduce the quantity of contaminated material and demonstrate that the plant was improving its radiological protection. There was also an economic incentive to reduce low-level wastes. The imaginative campaign involved workers in the reduction effort through training and the adoption of practical approaches to reducing the amount of material exposed to radiation that include sorting trash by radiation level and a compacting system. 4 figures

  9. The Owens Valley Millimeter Array

    International Nuclear Information System (INIS)

    Padin, S.; Scott, S.L.; Woody, D.P.; Scoville, N.Z.; Seling, T.V.

    1991-01-01

    The telescopes and signal processing systems of the Owens Valley Millimeter Array are considered, and improvements in the sensitivity and stability of the instrument are characterized. The instrument can be applied to map sources in the 85 to 115 GHz and 218 to 265 GHz bands with a resolution of about 1 arcsec in the higher frequency band. The operation of the array is fully automated. The current scientific programs for the array encompass high-resolution imaging of protoplanetary/protostellar disk structures, observations of molecular cloud complexes associated with spiral structure in nearby galaxies, and observations of molecular structures in the nuclei of spiral and luminous IRAS galaxies. 9 refs

  10. Joining elements of silicon carbide

    International Nuclear Information System (INIS)

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  11. Lung cancer in the Kashmir valley

    Directory of Open Access Journals (Sweden)

    Koul Parvaiz

    2010-01-01

    Full Text Available Background: Lung cancer has been found to be the second commonest cancer according to a hospital-based data from Kashmir, India. However, no incidence studies are available. Objective: To ascertain the incidence of lung cancer in Kashmir. Materials and Methods: All newly histologically diagnosed cases of lung cancer seen in various hospital and private laboratories of the Kashmir valley were registered over a period of two years (January 1, 2004 to December 31, 2005. Also included were patients attending the various oncological service areas of the institute and those diagnosed from any other laboratory outside the state. The incidence rate was calculated using the January 2005 population as the reference population estimated using the census-based projected populations. Results: Four hundred and sixty-two incident cases of lung cancer were seen during the study period. The crude incidence rate, age standardized (world and truncated age adjusted (40-69 years, world incidence rates for lung cancer per 100 000 population were 4.01, 6.48 and 15.28 respectively (males 6.55, 10.09 and 23.94 respectively and females 1.19, 2.14 and 4.65. The age adjusted rates for males in district Srinagar was 19.34 per 100 000. One hundred and fifty nine (69.8% of the 221 had a history of Hukkah smoking. Conclusions: Even though Kashmir as a whole is a low incidence area for lung cancer (ASR of < 15, Srinagar district has the highest incidence of lung cancer among the males in Kashmir. The data presented is assumed to be the closest approximation to a population-based data registry and the geographical incidence maps of ICMR need appropriate updating

  12. Computational Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — This laboratory contains a number of commercial off-the-shelf and in-house software packages allowing for both statistical analysis as well as mathematical modeling...

  13. National laboratories

    International Nuclear Information System (INIS)

    Moscati, G.

    1983-01-01

    The foundation of a 'National Laboratory' which would support a Research center in synchrotron radiation applications is proposed. The essential features of such a laboratory differing of others centers in Brazil are presented. (L.C.) [pt

  14. Geomechanics Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Geomechanics Laboratory allows its users to measure rock properties under a wide range of simulated service conditions up to very high pressures and complex load...

  15. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  16. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  17. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  18. Silicon microfabricated beam expander

    International Nuclear Information System (INIS)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-01-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

  19. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  20. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  1. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  2. Valley-dependent band structure and valley polarization in periodically modulated graphene

    Science.gov (United States)

    Lu, Wei-Tao

    2016-08-01

    The valley-dependent energy band and transport property of graphene under a periodic magnetic-strained field are studied, where the time-reversal symmetry is broken and the valley degeneracy is lifted. The considered superlattice is composed of two different barriers, providing more degrees of freedom for engineering the electronic structure. The electrons near the K and K' valleys are dominated by different effective superlattices. It is found that the energy bands for both valleys are symmetric with respect to ky=-(AM+ξ AS) /4 under the symmetric superlattices. More finite-energy Dirac points, more prominent collimation behavior, and new crossing points are found for K' valley. The degenerate miniband near the K valley splits into two subminibands and produces a new band gap under the asymmetric superlattices. The velocity for the K' valley is greatly renormalized compared with the K valley, and so we can achieve a finite velocity for the K valley while the velocity for the K' valley is zero. Especially, the miniband and band gap could be manipulated independently, leading to an increase of the conductance. The characteristics of the band structure are reflected in the transmission spectra. The Dirac points and the crossing points appear as pronounced peaks in transmission. A remarkable valley polarization is obtained which is robust to the disorder and can be controlled by the strain, the period, and the voltage.

  3. Sustainable agricultural development in inland valleys

    NARCIS (Netherlands)

    Zwart, S.J.

    2018-01-01

    The inland valley in Africa are common landscapes that have favorable conditions for agricultural production. Compared to the surrounding uplands they are characterized by a relatively high and secure water availability and high soil fertility levels. Inland valleys thus have a high agricultural

  4. Valley dependent transport in graphene L junction

    Science.gov (United States)

    Chan, K. S.

    2018-05-01

    We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

  5. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  6. Study on Silicon detectors

    International Nuclear Information System (INIS)

    Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

    1990-01-01

    Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

  7. Beaver assisted river valley formation

    Science.gov (United States)

    Westbrook, Cherie J.; Cooper, D.J.; Baker, B.W.

    2011-01-01

    We examined how beaver dams affect key ecosystem processes, including pattern and process of sediment deposition, the composition and spatial pattern of vegetation, and nutrient loading and processing. We provide new evidence for the formation of heterogeneous beaver meadows on riverine system floodplains and terraces where dynamic flows are capable of breaching in-channel beaver dams. Our data show a 1.7-m high beaver dam triggered overbank flooding that drowned vegetation in areas deeply flooded, deposited nutrient-rich sediment in a spatially heterogeneous pattern on the floodplain and terrace, and scoured soils in other areas. The site quickly de-watered following the dam breach by high stream flows, protecting the deposited sediment from future re-mobilization by overbank floods. Bare sediment either exposed by scouring or deposited by the beaver flood was quickly colonized by a spatially heterogeneous plant community, forming a beaver meadow. Many willow and some aspen seedlings established in the more heavily disturbed areas, suggesting the site may succeed to a willow carr plant community suitable for future beaver re-occupation. We expand existing theory beyond the beaver pond to include terraces within valleys. This more fully explains how beavers can help drive the formation of alluvial valleys and their complex vegetation patterns as was first postulated by Ruedemann and Schoonmaker in 1938. ?? 2010 John Wiley & Sons, Ltd.

  8. 3D View of Death Valley, California

    Science.gov (United States)

    2000-01-01

    This 3-D perspective view looking north over Death Valley, California, was produced by draping ASTER nighttime thermal infrared data over topographic data from the US Geological Survey. The ASTER data were acquired April 7, 2000 with the multi-spectral thermal infrared channels, and cover an area of 60 by 80 km (37 by 50 miles). Bands 13, 12, and 10 are displayed in red, green and blue respectively. The data have been computer enhanced to exaggerate the color variations that highlight differences in types of surface materials. Salt deposits on the floor of Death Valley appear in shades of yellow, green, purple, and pink, indicating presence of carbonate, sulfate, and chloride minerals. The Panamint Mtns. to the west, and the Black Mtns. to the east, are made up of sedimentary limestones, sandstones, shales, and metamorphic rocks. The bright red areas are dominated by the mineral quartz, such as is found in sandstones; green areas are limestones. In the lower center part of the image is Badwater, the lowest point in North America.Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER) is one of five Earth-observing instruments launched December 18, 1999, on NASA's Terra satellite. The instrument was built by Japan's Ministry of International Trade and Industry. A joint U.S./Japan science team is responsible for validation and calibration of the instrument and the data products. Dr. Anne Kahle at NASA's Jet Propulsion Laboratory, Pasadena, Calif., is the U.S. Science team leader; Moshe Pniel of JPL is the project manager. ASTER is the only high resolution imaging sensor on Terra. The primary goal of the ASTER mission is to obtain high-resolution image data in 14 channels over the entire land surface, as well as black and white stereo images. With revisit time of between 4 and 16 days, ASTER will provide the capability for repeat coverage of changing areas on Earth's surface.The broad spectral coverage and high spectral resolution of ASTER will provide

  9. Subwavelength silicon photonics

    International Nuclear Information System (INIS)

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  10. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  11. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  12. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  13. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  14. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  15. Surface thiolation of silicon for antifouling application.

    Science.gov (United States)

    Zhang, Xiaoning; Gao, Pei; Hollimon, Valerie; Brodus, DaShan; Johnson, Arion; Hu, Hongmei

    2018-02-07

    Thiol groups grafted silicon surface was prepared as previously described. 1H,1H,2H,2H-perfluorodecanethiol (PFDT) molecules were then immobilized on such a surface through disulfide bonds formation. To investigate the contribution of PFDT coating to antifouling, the adhesion behaviors of Botryococcus braunii (B. braunii) and Escherichia coli (E. coli) were studied through biofouling assays in the laboratory. The representative microscope images suggest reduced B. braunii and E. coli accumulation densities on PFDT integrated silicon substrate. However, the antifouling performance of PFDT integrated silicon substrate decreased over time. By incubating the aged substrate in 10 mM TCEP·HCl solution for 1 h, the fouled PFDT coating could be removed as the disulfide bonds were cleaved, resulting in reduced absorption of algal cells and exposure of non-fouled silicon substrate surface. Our results indicate that the thiol-terminated substrate can be potentially useful for restoring the fouled surface, as well as maximizing the effective usage of the substrate.

  16. Characterization of a Commercial Silicon Beta Cell

    International Nuclear Information System (INIS)

    Foxe, Michael P.; Hayes, James C.; Mayer, Michael F.; McIntyre, Justin I.; Sivels, Ciara B.; Suarez, Rey

    2016-01-01

    Silicon detectors are of interest for the verification of the Comprehensive Nuclear-Test-Ban Treaty (CTBT) due to their enhanced energy resolution compared to plastic scintillators beta cells. Previous work developing a figure-of-merit (FOM) for comparison of beta cells suggests that the minimum detectable activity (MDA) could be reduced by a factor of two to three with the use of silicon detectors. Silicon beta cells have been developed by CEA (France) and Lares Ltd. (Russia), with the PIPSBox developed by CEA being commercially available from Canberra for approximately $35k, but there is still uncertainty about the reproducibility of the capabilities in the field. PNNL is developing a high-resolution beta-gamma detector system in the shallow underground laboratory, which will utilize and characterize the operation of the PIPSBox detector. Throughout this report, we examine the capabilities of the PIPSBox as developed by CEA. The lessons learned through the testing and use of the PIPSBox will allow PNNL to strategically develop a silicon detector optimized to better suit the communities needs in the future.

  17. Community Response to Concentrating Solar Power in the San Luis Valley: October 9, 2008 - March 31, 2010

    Energy Technology Data Exchange (ETDEWEB)

    Farhar, B. C.; Hunter, L. M.; Kirkland, T. M.; Tierney, K. J.

    2010-06-01

    This report is about the social acceptance of utility-scale concentrating solar power (CSP) plants in the San Luis Valley, approximately 200 miles southwest of Denver, Colorado. The research focused on social factors that may facilitate and impede the adoption and implementation of CSP. During the winter of 2008-2009, interviews were conducted with a purposive sample of 25 CSP-related stakeholders inside and outside the Valley. Interviews focused on the perceived advantages and disadvantages of siting a hypothetical 100-MW CSP facility in the Valley, the level of community support and opposition to CSP development, and related issues, such as transmission. State policy recommendations based on the findings include developing education programs for Valley residents, integrating Valley decision makers into an energy-water-land group, providing training for Valley decision makers, offering workforce training, evaluating models of taxation, and forming landholder energy associations. In addition, the SLV could become a laboratory for new approaches to CSP facility and transmission siting decision-making. The author recommends that outside stakeholders address community concerns and engage Valley residents in CSP decisions. Engaging the residents in CSP and transmission decisions, the author says, should take parallel significance with the investment in solar technology.

  18. Hidden Valley Search at ATLAS

    CERN Document Server

    Verducci, M

    2011-01-01

    A number of extensions of the Standard Model result in neutral and weakly-coupled particles that decay to multi hadrons or multi leptons with macroscopic decay lengths. These particles with decay paths that can be comparable with ATLAS detector dimensions represent, from an experimental point of view, a challenge both for the trigger and for the reconstruction capabilities of the ATLAS detector. We will present a set of signature driven triggers for the ATLAS detector that target such displaced decays and evaluate their performances for some benchmark models and describe analysis strategies and limits on the production of such long-lived particles. A first estimation of the Hidden Valley trigger rates has been evaluated with 6 pb-1 of data collected at ATLAS during the data taking of 2010.

  19. Laboratory Building

    Energy Technology Data Exchange (ETDEWEB)

    Herrera, Joshua M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-03-01

    This report is an analysis of the means of egress and life safety requirements for the laboratory building. The building is located at Sandia National Laboratories (SNL) in Albuquerque, NM. The report includes a prescriptive-based analysis as well as a performance-based analysis. Following the analysis are appendices which contain maps of the laboratory building used throughout the analysis. The top of all the maps is assumed to be north.

  20. Chemistry Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — Purpose: To conduct fundamental studies of highway materials aimed at understanding both failure mechanisms and superior performance. New standard test methods are...

  1. Montlake Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The NWFSC conducts critical fisheries science research at its headquarters in Seattle, WA and at five research stations throughout Washington and Oregon. The unique...

  2. Dynamics Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Dynamics Lab replicates vibration environments for every Navy platform. Testing performed includes: Flight Clearance, Component Improvement, Qualification, Life...

  3. Psychology Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — This facility provides testing stations for computer-based assessment of cognitive and behavioral Warfighter performance. This 500 square foot configurable space can...

  4. Visualization Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Evaluates and improves the operational effectiveness of existing and emerging electronic warfare systems. By analyzing and visualizing simulation results...

  5. Analytical Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Analytical Labspecializes in Oil and Hydraulic Fluid Analysis, Identification of Unknown Materials, Engineering Investigations, Qualification Testing (to support...

  6. Propulsion Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Propulsion Lab simulates field test conditions in a controlled environment, using standardized or customized test procedures. The Propulsion Lab's 11 cells can...

  7. Spiral silicon drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

  8. Systematic Mapping and Statistical Analyses of Valley Landform and Vegetation Asymmetries Across Hydroclimatic Gradients

    Science.gov (United States)

    Poulos, M. J.; Pierce, J. L.; McNamara, J. P.; Flores, A. N.; Benner, S. G.

    2015-12-01

    Terrain aspect alters the spatial distribution of insolation across topography, driving eco-pedo-hydro-geomorphic feedbacks that can alter landform evolution and result in valley asymmetries for a suite of land surface characteristics (e.g. slope length and steepness, vegetation, soil properties, and drainage development). Asymmetric valleys serve as natural laboratories for studying how landscapes respond to climate perturbation. In the semi-arid montane granodioritic terrain of the Idaho batholith, Northern Rocky Mountains, USA, prior works indicate that reduced insolation on northern (pole-facing) aspects prolongs snow pack persistence, and is associated with thicker, finer-grained soils, that retain more water, prolong the growing season, support coniferous forest rather than sagebrush steppe ecosystems, stabilize slopes at steeper angles, and produce sparser drainage networks. We hypothesize that the primary drivers of valley asymmetry development are changes in the pedon-scale water-balance that coalesce to alter catchment-scale runoff and drainage development, and ultimately cause the divide between north and south-facing land surfaces to migrate northward. We explore this conceptual framework by coupling land surface analyses with statistical modeling to assess relationships and the relative importance of land surface characteristics. Throughout the Idaho batholith, we systematically mapped and tabulated various statistical measures of landforms, land cover, and hydroclimate within discrete valley segments (n=~10,000). We developed a random forest based statistical model to predict valley slope asymmetry based upon numerous measures (n>300) of landscape asymmetries. Preliminary results suggest that drainages are tightly coupled with hillslopes throughout the region, with drainage-network slope being one of the strongest predictors of land-surface-averaged slope asymmetry. When slope-related statistics are excluded, due to possible autocorrelation, valley

  9. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  10. LYSO crystal calorimeter readout with silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Berra, A., E-mail: alessandro.berra@gmail.com [Università degli Studi dell' Insubria (Italy); INFN sezione di Milano Bicocca (Italy); Bonvicini, V. [INFN sezione di Trieste (Italy); Cecchi, C.; Germani, S. [INFN sezione di Perugia (Italy); Guffanti, D. [Università degli Studi dell' Insubria (Italy); Lietti, D. [Università degli Studi dell' Insubria (Italy); INFN sezione di Milano Bicocca (Italy); Lubrano, P.; Manoni, E. [INFN sezione di Perugia (Italy); Prest, M. [Università degli Studi dell' Insubria (Italy); INFN sezione di Milano Bicocca (Italy); Rossi, A. [INFN sezione di Perugia (Italy); Vallazza, E. [INFN sezione di Trieste (Italy)

    2014-11-01

    Large area Silicon PhotoMultipliers (SiPMs) are the new frontier of the development of readout systems for scintillating detectors. A SiPM consists of a matrix of parallel-connected silicon micropixels operating in limited Geiger–Muller avalanche mode, and thus working as independent photon counters with a very high gain (∼10{sup 6}). This contribution presents the performance in terms of linearity and energy resolution of an electromagnetic homogeneous calorimeter composed of 9∼18X{sub 0} LYSO crystals. The crystals were readout by 36 4×4 mm{sup 2} SiPMs (4 for each crystal) produced by FBK-irst. This calorimeter was tested at the Beam Test Facility at the INFN laboratories in Frascati with a single- and multi-particle electron beam in the 100–500 MeV energy range.

  11. Neuromorphic Silicon Neuron Circuits

    Science.gov (United States)

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

    2011-01-01

    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  12. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  13. Neuromorphic silicon neuron circuits

    Directory of Open Access Journals (Sweden)

    Giacomo eIndiveri

    2011-05-01

    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  14. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  15. The LHCb Silicon Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

    2016-09-21

    The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

  16. Removal of inclusions from silicon

    Science.gov (United States)

    Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

    2009-11-01

    The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

  17. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  18. Silicon Tracking Upgrade at CDF

    International Nuclear Information System (INIS)

    Kruse, M.C.

    1998-04-01

    The Collider Detector at Fermilab (CDF) is scheduled to begin recording data from Run II of the Fermilab Tevatron in early 2000. The silicon tracking upgrade constitutes both the upgrade to the CDF silicon vertex detector (SVX II) and the new Intermediate Silicon Layers (ISL) located at radii just beyond the SVX II. Here we review the design and prototyping of all aspects of these detectors including mechanical design, data acquisition, and a trigger based on silicon tracking

  19. Silicon microphones - a Danish perspective

    DEFF Research Database (Denmark)

    Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

    1998-01-01

    Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

  20. CMS silicon tracker developments

    International Nuclear Information System (INIS)

    Civinini, C.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.D.R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2002-01-01

    The CMS Silicon tracker consists of 70 m 2 of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors

  1. Silicon hybrid integration

    International Nuclear Information System (INIS)

    Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

    2011-01-01

    Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

  2. Strained Silicon Photonics

    Directory of Open Access Journals (Sweden)

    Ralf B. Wehrspohn

    2012-05-01

    Full Text Available A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

  3. Elite silicon and solar power

    International Nuclear Information System (INIS)

    Yasamanov, N.A.

    2000-01-01

    The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

  4. Valley-filtered edge states and quantum valley Hall effect in gated bilayer graphene.

    Science.gov (United States)

    Zhang, Xu-Long; Xu, Lei; Zhang, Jun

    2017-05-10

    Electron edge states in gated bilayer graphene in the quantum valley Hall (QVH) effect regime can carry both charge and valley currents. We show that an interlayer potential splits the zero-energy level and opens a bulk gap, yielding counter-propagating edge modes with different valleys. A rich variety of valley current states can be obtained by tuning the applied boundary potential and lead to the QVH effect, as well as to the unbalanced QVH effect. A method to individually manipulate the edge states by the boundary potentials is proposed.

  5. Wedge silicon detectors for the inner trackering system of CMS

    International Nuclear Information System (INIS)

    Catacchini, E.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Meschini, M.; Parrini, G.; Pieri, M.; Wheadon, R.

    1997-01-01

    One ''wedge'' double sided silicon detector prototype for the CMS forward inner tracker has been tested both in laboratory and on a high energy particle beam. The results obtained indicate the most reliable solutions for the strip geometry of the junction side. Three different designs of ''wedge'' double sided detectors with different solutions for the ohmic side strip geometry are presented. (orig.)

  6. A rigorous treatment of uncertainty quantification for Silicon damage metrics

    International Nuclear Information System (INIS)

    Griffin, P.

    2016-01-01

    These report summaries the contributions made by Sandia National Laboratories in support of the International Atomic Energy Agency (IAEA) Nuclear Data Section (NDS) Technical Meeting (TM) on Nuclear Reaction Data and Uncertainties for Radiation Damage. This work focused on a rigorous treatment of the uncertainties affecting the characterization of the displacement damage seen in silicon semiconductors. (author)

  7. Vegetation - San Felipe Valley [ds172

    Data.gov (United States)

    California Natural Resource Agency — This Vegetation Map of the San Felipe Valley Wildlife Area in San Diego County, California is based on vegetation samples collected in the field in 2002 and 2005 and...

  8. Babesiosis in Lower Hudson Valley, New York

    Centers for Disease Control (CDC) Podcasts

    This podcast discusses a study about an increase in babesiosis in the Lower Hudson Valley of New York state. Dr. Julie Joseph, Assistant Professor of Medicine at New York Medical College, shares details of this study.

  9. Burrowing Owl - Palo Verde Valley [ds197

    Data.gov (United States)

    California Natural Resource Agency — These burrowing owl observations were collected during the spring and early summer of 1976 in the Palo Verde Valley, eastern Riverside County, California. This is an...

  10. Electrical valley filtering in transition metal dichalcogenides

    Science.gov (United States)

    Hsieh, Tzu-Chi; Chou, Mei-Yin; Wu, Yu-Shu

    2018-03-01

    This work investigates the feasibility of electrical valley filtering for holes in transition metal dichalcogenides. We look specifically into the scheme that utilizes a potential barrier to produce valley-dependent tunneling rates, and perform the study with both a k .p -based analytic method and a recursive Green's function-based numerical method. The study yields the transmission coefficient as a function of incident energy and transverse wave vector, for holes going through lateral quantum barriers oriented in either armchair or zigzag directions, in both homogeneous and heterogeneous systems. The main findings are the following: (1) The tunneling current valley polarization increases with increasing barrier width or height; (2) both the valley-orbit interaction and band structure warping contribute to valley-dependent tunneling, with the former contribution being manifest in structures with asymmetric potential barriers, and the latter being orientation dependent and reaching maximum for transmission in the armchair direction; and (3) for transmission ˜0.1 , a tunneling current valley polarization of the order of 10 % can be achieved.

  11. Electronic properties of epitaxial 6H silicon carbide

    International Nuclear Information System (INIS)

    Wessels, B.W.; Gatos, H.C.

    1977-01-01

    The electrical conductivity and Hall coefficient were measured in the temperature range from 78 to 900 K for n-type epitaxially grown 6H silicon carbide. A many-valley model of the conduction band was used in the analysis of electron concentration as a function of temperature. From this analysis, the density of states mass to the free electron mass ratio per ellipsoid was calculated to be 0.45. It was estimated that the constant energy surface of the conduction band consists of three ellipsoids. The ionization energy of the shallowest nitrogen donor was found to be 105 meV, when the valley-orbit interaction was taken into account. The electron scattering mechanisms in the epitaxial layers were analyzed and it was shown that the dominant mechanism limiting electron mobility at high temperatures is inter-valley scattering and at low temperatures (200K), impurity and space charge scattering. A value of 360 cm 2 /V sec was calculated for the maximum room temperature Hall mobility expected for electrons in pure 6H SiC. The effect of epitaxial growth temperature on room temperature Hall mobility was also investigated. (author)

  12. Selective formation of porous silicon

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

    1993-01-01

    A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

  13. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto; Sevilla, Galo T.; Ghoneim, Mohamed T.; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2014-01-01

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100

  14. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  15. OPAL Silicon Tungsten Luminometer

    CERN Multimedia

    OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

  16. Silicon graphene Bragg gratings.

    Science.gov (United States)

    Capmany, José; Domenech, David; Muñoz, Pascual

    2014-03-10

    We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.

  17. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  18. Silicon oxynitride based photonics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

  19. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  20. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  1. DELPHI Silicon Tracker

    CERN Multimedia

    DELPHI was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The silicon tracking detector was nearest to the collision point in the centre of the detector. It was used to pinpoint the collision and catch short-lived particles.

  2. Laboratory Tests

    Science.gov (United States)

    ... Medical Devices Radiation-Emitting Products Vaccines, Blood & Biologics Animal & ... What are lab tests? Laboratory tests are medical devices that are intended for use on samples of blood, urine, or other tissues ...

  3. Audio Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides an environment and facilities for auditory display research. A primary focus is the performance use of binaurally rendered 3D sound in conjunction...

  4. Target laboratory

    International Nuclear Information System (INIS)

    Ephraim, D.C.; Pednekar, A.R.

    1993-01-01

    A target laboratory to make stripper foils for the accelerator and various targets for use in the experiments is set up in the pelletron accelerator facility. The facilities available in the laboratory are: (1) D.C. glow discharge setup, (2) carbon arc set up, and (3) vacuum evaporation set up (resistance heating), electron beam source, rolling mill - all for target preparation. They are described. Centrifugal deposition technique is used for target preparation. (author). 3 figs

  5. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  6. Update on the possible nutritional importance of silicon.

    Science.gov (United States)

    Nielsen, Forrest H

    2014-10-01

    Convincing evidence that silicon is a bioactive beneficial trace element continues to accumulate. The evidence, which has come from human, animal, and in vitro studies performed by several laboratories, indicate that silicon in nutritional and supra nutritional amounts promotes bone and connective tissue health, may have a modulating effect on the immune or inflammatory response, and has been associated with mental health. A plausible mechanism of action for the beneficial effects of silicon is the binding of hydroxyl groups of polyols such that it influences the formation and/or utilization of glycosaminoglycans, mucopolysaccharides, and collagen in connective tissue and bone. In addition, silicon may affect the absorption, retention or action of other mineral elements (e.g., aluminum, copper, magnesium). Based on findings from both animal and human experiments, an intake of silicon of near 25mg/d would be a reasonable suggestion for an adequate intake that would assure its nutritional benefits. Increased intakes of silicon through consuming unrefined grains, certain vegetables, and beverages and cereals made from grains should be recognized as a reasonable dietary recommendation. Published by Elsevier GmbH.

  7. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    International Nuclear Information System (INIS)

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  8. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  9. Topological Valley Transport in Two-dimensional Honeycomb Photonic Crystals.

    Science.gov (United States)

    Yang, Yuting; Jiang, Hua; Hang, Zhi Hong

    2018-01-25

    Two-dimensional photonic crystals, in analogy to AB/BA stacking bilayer graphene in electronic system, are studied. Inequivalent valleys in the momentum space for photons can be manipulated by simply engineering diameters of cylinders in a honeycomb lattice. The inequivalent valleys in photonic crystal are selectively excited by a designed optical chiral source and bulk valley polarizations are visualized. Unidirectional valley interface states are proved to exist on a domain wall connecting two photonic crystals with different valley Chern numbers. With the similar optical vortex index, interface states can couple with bulk valley polarizations and thus valley filter and valley coupler can be designed. Our simple dielectric PC scheme can help to exploit the valley degree of freedom for future optical devices.

  10. Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain

    Science.gov (United States)

    Mansir, J.; Conti, P.; Zeng, Z.; Pla, J. J.; Bertet, P.; Swift, M. W.; Van de Walle, C. G.; Thewalt, M. L. W.; Sklenard, B.; Niquet, Y. M.; Morton, J. J. L.

    2018-04-01

    We experimentally study the coupling of group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts that are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains |ɛ |hydrostatic component of strain and achieve semiquantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150 GHz per strain, for Bi donors in Si) offers a method for donor spin tuning—shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order 10-6—as well as opportunities for coupling to mechanical resonators.

  11. MX Siting Investigation Geotechnical Evaluation Verification Study - Cave Valley, Nevada. Volume I. Synthesis.

    Science.gov (United States)

    1981-10-26

    areas of non- rippable materials may be encountered throughout the northwestern portion of the valley. Laboratory test results and field observations...non- rippable at shallow depths, thereby classifying them in this instance as areas of rock and/or shallow rock. When this occurs, these areas may...OCCUR- Rock is defined as any earth material which is not rippable RING WITHIN 50 FEET 015m) AND by conventional excavation methods. Where available

  12. Overview of the West Valley Vitrification Facility transfer cart control system

    International Nuclear Information System (INIS)

    Bradley, E.C.; Rupple, F.R.

    1993-01-01

    Oak Ridge National Laboratory (ORNL) has designed the control system for the West Valley Demonstration Project Vitrification Facility transfer cart. The transfer cart will transfer canisters of vitrified high-level waste remotely within the Vitrification Facility. The control system will operate the cart under battery power by wireless control. The equipment includes cart mounted control electronics, battery charger, control pendants, engineer's console, and facility antennas

  13. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  14. Isotope laboratories

    International Nuclear Information System (INIS)

    1978-01-01

    This report from the Dutch Ministry of Health is an advisory document concerned with isotope laboratories in hospitals, in connection with the Dutch laws for hospitals. It discusses which hospitals should have isotope laboratories and concludes that as many hospitals as possible should have small laboratories so that emergency cases can be dealt with. It divides the Netherlands into regions and suggests which hospitals should have these facilities. The questions of how big each lab. is to be, what equipment each has, how each lab. is organised, what therapeutic and diagnostic work should be carried out by each, etc. are discussed. The answers are provided by reports from working groups for in vivo diagnostics, in vitro diagnostics, therapy, and safety and their results form the criteria for the licences of isotope labs. The results of a questionnaire for isotope labs. already in the Netherlands are presented, and their activities outlined. (C.F.)

  15. Tennessee Valley Authority National Fertilizer and Environmental Research Center

    International Nuclear Information System (INIS)

    Gautney, J.

    1991-01-01

    The National Fertilizer and Environmental Research Center (NFERC) is a unique part of the Tennessee Valley Authority (TVA), a government agency created by an Act of Congress in 1933. The Center, located in Muscle Shoals, Alabama, is a national laboratory for research, development, education and commercialization for fertilizers and related agricultural chemicals including their economic and environmentally safe use, renewable fuel and chemical technologies, alternatives for solving environmental/waste problems, and technologies which support national defense- NFERC projects in the pesticide waste minimization/treatment/disposal areas include ''Model Site Demonstrations and Site Assessments,'' ''Development of Waste Treatment and Site Remediation Technologies for Fertilizer/Agrichemical Dealers,'' ''Development of a Dealer Information/Education Program,'' and ''Constructed Wetlands.''

  16. The CMS silicon tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2000-01-01

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction

  17. Undepleted silicon detectors

    International Nuclear Information System (INIS)

    Rancoita, P.G.; Seidman, A.

    1985-01-01

    Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

  18. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  19. Amorphous silicon radiation detectors

    Science.gov (United States)

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  20. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Energies of the X- and L-valleys in In{sub 0.53}Ga{sub 0.47}As from electronic structure calculations

    Energy Technology Data Exchange (ETDEWEB)

    Greene-Diniz, Gabriel; Greer, J. C. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland); Fischetti, M. V. [Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road RL10, Richardson, Texas 75080 (United States)

    2016-02-07

    Several theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of In{sub x}Ga{sub 1−x}As with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L- and X-valley minima are ∼1 eV and ∼1.2 eV, respectively, higher in energy with respect to the conduction-band minimum at the Γ-point.

  2. Electrometallurgy of Silicon

    Science.gov (United States)

    1988-01-01

    wind, plants, and water impounded in elevated reservoirs. Photovoltaic or solar cells, which convert sunlight directly to electricity, belongs tc, the...on record is that of St. Claire DeVille, who claimed that silicon was produced by electrolysing an impure melt of NaAlC14, but his material did not...this composition and purified melts were electrolysed at about 14500C in graphite crucible and using graphite electrodes. Applied potentials were

  3. Liquid Silicon Pouch Anode

    Science.gov (United States)

    2017-09-06

    Number 15/696,426 Filing Date 6 September 2017 Inventor Charles J. Patrissi et al Address any questions concerning this matter to the...silicon-based anodes during cycling, lithium insertion and deinsertion. Mitigation of this problem has long been sought and will result in improved...design shown. [0032] It will be understood that many additional changes in the details, materials, steps and arrangement of parts, which have been

  4. The CMS silicon tracker

    International Nuclear Information System (INIS)

    D'Alessandro, R.; Biggeri, U.; Bruzzi, M.; Catacchini, E.; Civinini, C.; Focardi, E.; Lenzi, M.; Loreti, M.; Meschini, M.; Parrini, G.; Pieri, M.; Albergo, S.; Boemi, D.; Potenza, R.; Tricomi, A.; Angarano, M.; Creanza, D.; Palma, M. de; Fiore, L.; Maggi, G.; My, S.; Raso, G.; Selvaggi, G.; Tempesta, P.; Azzi, P.; Bacchetta, N.; Bisello, D.; Candelori, A.; Castro, A.; Da Rold, M.; Giraldo, A.; Martignon, G.; Paccagnella, A.; Stavitsky, I.; Babucci, E.; Bartalini, P.; Bilei, G.M.; Checcucci, B.; Ciampolini, P.; Lariccia, P.; Mantovani, G.; Passeri, D.; Santocchia, A.; Servoli, L.; Wang, Y.; Bagliesi, G.; Basti, A.; Bosi, F.; Borello, L.; Bozzi, C.; Castaldi, R.; Dell'Orso, R.; Giassi, A.; Messineo, A.; Palla, F.; Raffaelli, F.; Sguazzoni, G.; Starodumov, A.; Tonelli, G.; Vannini, C.; Verdini, P.G.; Xie, Z.; Breuker, H.; Caner, A.; Elliott-Peisert, A.; Feld, L.; Glessing, B.; Hammerstrom, R.; Huhtinen, M.; Mannelli, M.; Marchioro, A.; Schmitt, B.; Stefanini, G.; Connotte, J.; Gu, W.H.; Luebelsmeyer, K.; Pandoulas, D.; Siedling, R.; Wittmer, B.; Della Marina, R.; Freudenreich, K.; Lustermann, W.; Viertel, G.; Eklund, C.; Karimaeki, V.; Skog, K.; French, M.; Hall, G.; Mc Evoy, B.; Raymond, M.; Hrubec, J.; Krammer, M.; Piperov, S.; Tuuva, T.; Watts, S.; Silvestris, L.

    1998-01-01

    The new silicon tracker layout (V4) is presented. The system aspects of the construction are discussed together with the expected tracking performance. Because of the high radiation environment in which the detectors will operate, particular care has been devoted to the study of the characteristics of heavily irradiated detectors. This includes studies on performance (charge collection, cluster size, resolution, efficiency) as a function of the bias voltage, integrated fluence, incidence angle and temperature. (author)

  5. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  6. Silicon and Civilization,

    Science.gov (United States)

    1980-11-04

    of a diamond. 7. The particular physical and chemical properties of silicon resulted in the fact that in the periodic system it was found in the III...small quantities. Silica is found in blades of grass and grain, in reed and bamboo shoots, where it serves to stiffen the stalk. 2. Diatomite ... properties desired in technology. Quartz glass is very resistant to temperature change since it has a very small coefficient of thermal expansion, is

  7. Porous silicon: silicon quantum dots for photonic applications

    International Nuclear Information System (INIS)

    Pavesi, L.; Guardini, R.

    1996-01-01

    Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

  8. Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

    International Nuclear Information System (INIS)

    Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

    2012-01-01

    Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

  9. Hybrid III-V Silicon Lasers

    Science.gov (United States)

    Bowers, John

    2014-03-01

    Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

  10. Analysis of Mining-induced Valley Closure Movements

    Science.gov (United States)

    Zhang, C.; Mitra, R.; Oh, J.; Hebblewhite, B.

    2016-05-01

    Valley closure movements have been observed for decades in Australia and overseas when underground mining occurred beneath or in close proximity to valleys and other forms of irregular topographies. Valley closure is defined as the inward movements of the valley sides towards the valley centreline. Due to the complexity of the local geology and the interplay between several geological, topographical and mining factors, the underlying mechanisms that actually cause this behaviour are not completely understood. A comprehensive programme of numerical modelling investigations has been carried out to further evaluate and quantify the influence of a number of these mining and geological factors and their inter-relationships. The factors investigated in this paper include longwall positional factors, horizontal stress, panel width, depth of cover and geological structures around the valley. It is found that mining in a series passing beneath the valley dramatically increases valley closure, and mining parallel to valley induces much more closure than other mining orientations. The redistribution of horizontal stress and influence of mining activity have also been recognised as important factors promoting valley closure, and the effect of geological structure around the valley is found to be relatively small. This paper provides further insight into both the valley closure mechanisms and how these mechanisms should be considered in valley closure prediction models.

  11. Fine pitch and low material readout bus in the Silicon Pixel Vertex Tracker for the PHENIX Vertex Tracker upgrade

    International Nuclear Information System (INIS)

    Fujiwara, Kohei

    2010-01-01

    The construction of the Silicon Pixel Detector is starting in spring 2009 as project of the RHIC-PHENIX Silicon Vertex Tracker (VTX) upgrade at the Brookhaven National Laboratory. For the construction, we have developed a fine pitch and low material readout bus as the backbone parts of the VTX. In this article, we report the development and production of the readout bus.

  12. Assembly procedure for the silicon pixel ladder for PHENIX silicon vertex tracker

    International Nuclear Information System (INIS)

    Onuki, Y.; Akiba, Y.; En'yo, H.; Fujiwara, K.; Haki, Y.; Hashimoto, K.; Ichimiya, R.; Kasai, M.; Kawashima, M.; Kurita, K.; Kurosawa, M.; Mannel, E.J.; Nakano, K.; Pak, R.; Sekimoto, M.; Sondheim, W.E.; Taketani, A.; Togawa, M.; Yamamoto, Y.

    2009-01-01

    The silicon vertex tracker (VTX) will be installed in the summer of 2010 to enhance the physics capabilities of the Pioneering High Energy Nuclear Interaction eXperiment (PHENIX) experiment at Brookhaven National Laboratory. The VTX consists of two types of silicon detectors: a pixel detector and a strip detector. The pixel detector consists of 30 pixel ladders placed on the two inner cylindrical layers of the VTX. The ladders are required to be assembled with high precision, however, they should be assembled in both cost and time efficient manner. We have developed an assembly bench for the ladder with several assembly fixtures and a quality assurance (Q/A) system using a 3D measurement machine. We have also developed an assembly procedure for the ladder, including a method for dispensing adhesive uniformly and encapsulation of bonding wires. The developed procedures were adopted in the assembly of the first pixel ladder and satisfy the requirements.

  13. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  14. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  15. Kingsbury Laboratories

    International Nuclear Information System (INIS)

    Hughes, S.B.

    1986-01-01

    The paper concerns the work of the Kingsbury Laboratories of Fairey Engineering Company, for the nuclear industry. The services provided include: monitoring of nuclear graphite machining, specialist welding, non-destructive testing, and metallurgy testing; and all are briefly described. (U.K.)

  16. Production of high specific activity silicon-32

    International Nuclear Information System (INIS)

    Phillips, D.R.; Brzezinski, M.A.

    1998-01-01

    This is the final report of a three-year, Laboratory Directed Research and Development Project (LDRD) at Los Alamos National Laboratory (LANL). There were two primary objectives for the work performed under this project. The first was to take advantage of capabilities and facilities at Los Alamos to produce the radionuclide 32 Si in unusually high specific activity. The second was to combine the radioanalytical expertise at Los Alamos with the expertise at the University of California to develop methods for the application of 32 Si in biological oceanographic research related to global climate modeling. The first objective was met by developing targetry for proton spallation production of 32 Si in KCl targets and chemistry for its recovery in very high specific activity. The second objective was met by developing a validated field-useable, radioanalytical technique, based upon gas-flow proportional counting, to measure the dynamics of silicon uptake by naturally occurring diatoms

  17. The lakes of the Jordan Rift Valley

    International Nuclear Information System (INIS)

    Gat, J.R.

    2001-01-01

    This paper presents a summary of the proceedings of a workshop on the Lakes of the Jordan Rift Valley that was held in conjunction with the CRP on The Use of Isotope Techniques in Lake Dynamics Investigations. The paper presents a review of the geological, hydrogeological and physical limnological setting of the lakes in the Jordan Rift Valley, Lake Hula, Lake Kinneret and the Dead Sea. This is complemented by a description of the isotope hydrology of the system that includes the use of a wide range of isotopes: oxygen-18, deuterium, tritium, carbon-14, carbon-13, chlorine isotopes, boron-11 and helium-3/4. Environmental isotope aspects of the salt balances of the lakes, their palaeolimnology and biogeochemical tracers are also presented. The scope of application of isotopic tracers is very broad and provides a clear insight into many aspects of the physical, chemical and biological limnology of the Rift Valley Lakes. (author)

  18. A new Proposal to Mexico Valley Zonification

    Science.gov (United States)

    Flores-Estrella, H. C.; Yussim, S.; Lomnitz, C.

    2004-12-01

    The effects of the Michoacan earthquake (19th September, 1985, Mw 8.1) in Mexico City caused a significant change in the political, social and scientific history, as it was considered the worst seismic disaster ever lived in Mexico. Since then, numerous efforts have been made to understand and determine the parameters that caused the special features registered. One of these efforts had began on 1960 with the work by Marsal and Masari, who published the Mexico Valley seismological and geotechnical zonification (1969), based on gravimetric and shallow borehole data. In this work, we present a revision of the studies that proposed the zonification, a description of the valley geology, and basing on it we propose a new zonification for Mexico Valley.

  19. Geologic summary of the Owens Valley drilling project, Owens and Rose Valleys, Inyo County, California

    International Nuclear Information System (INIS)

    Schaer, D.W.

    1981-07-01

    The Owens Valley Drilling Project consists of eight drill holes located in southwest Inyo County, California, having an aggregate depth of 19,205 feet (5853 m). Project holes penetrated the Coso Formation of upper Pliocene or early Pleistocene age and the Owens Lake sand and lakebed units of the same age. The project objective was to improve the reliability of uranium-potential-resource estimates assigned to the Coso Formation in the Owens Valley region. Uranium-potential-resource estimates for this area in $100 per pound U 3 O 8 forward-cost-category material have been estimatd to be 16,954 tons (15,384 metric tons). This estimate is based partly on project drilling results. Within the Owens Valley project area, the Coso Formation was encountered only in the Rose Valley region, and for this reason Rose Valley is considered to be the only portion of the project area favorable for economically sized uranium deposits. The sequence of sediments contained in the Owens Valley basin is considered to be largely equivalent but lithologically dissimilar to the Coso Formation of Haiwee Ridge and Rose Valley. The most important factor in the concentration of significant amounts of uranium in the rock units investigated appears to be the availability of reducing agents. Significant amounts of reductants (pyrite) were found in the Coso Formation. No organic debris was noted. Many small, disconnected uranium occurrences, 100 to 500 ppM U 3 O 8 , were encountered in several of the holes

  20. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  1. Characterization of Czochralski Silicon Detectors

    OpenAIRE

    Luukka, Panja-Riina; Haerkoenen, Jaakko

    2012-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

  2. Groundwater quality in Coachella Valley, California

    Science.gov (United States)

    Dawson, Barbara J. Milby; Belitz, Kenneth

    2012-01-01

    Groundwater provides more than 40 percent of California’s drinking water. To protect this vital resource, the State of California created the Groundwater Ambient Monitoring and Assessment (GAMA) Program. The Priority Basin Project of the GAMA Program provides a comprehensive assessment of the State’s groundwater quality and increases public access to groundwater-quality information. Coachella Valley is one of the study areas being evaluated. The Coachella study area is approximately 820 square miles (2,124 square kilometers) and includes the Coachella Valley groundwater basin (California Department of Water Resources, 2003). Coachella Valley has an arid climate, with average annual rainfall of about 6 inches (15 centimeters). The runoff from the surrounding mountains drains to rivers that flow east and south out of the study area to the Salton Sea. Land use in the study area is approximately 67 percent (%) natural, 21% agricultural, and 12% urban. The primary natural land cover is shrubland. The largest urban areas are the cities of Indio and Palm Springs (2010 populations of 76,000 and 44,000, respectively). Groundwater in this basin is used for public and domestic water supply and for irrigation. The main water-bearing units are gravel, sand, silt, and clay derived from surrounding mountains. The primary aquifers in Coachella Valley are defined as those parts of the aquifers corresponding to the perforated intervals of wells listed in the California Department of Public Health database. Public-supply wells in Coachella Valley are completed to depths between 490 and 900 feet (149 to 274 meters), consist of solid casing from the land surface to a depth of 260 to 510 feet (79 to 155 meters), and are screened or perforated below the solid casing. Recharge to the groundwater system is primarily runoff from the surrounding mountains, and by direct infiltration of irrigation. The primary sources of discharge are pumping wells, evapotranspiration, and underflow to

  3. Direct measurement of exciton valley coherence in monolayer WSe2

    KAUST Repository

    Hao, Kai; Moody, Galan; Wu, Fengcheng; Dass, Chandriker Kavir; Xu, Lixiang; Chen, Chang Hsiao; Sun, Liuyang; Li, Ming-yang; Li, Lain-Jong; MacDonald, Allan H.; Li, Xiaoqin

    2016-01-01

    In crystals, energy band extrema in momentum space can be identified by a valley index. The internal quantum degree of freedom associated with valley pseudospin indices can act as a useful information carrier, analogous to electronic charge

  4. Goldstone-Apple Valley Radio Telescope System Theory of Operation

    Science.gov (United States)

    Stephan, George R.

    1997-01-01

    The purpose of this learning module is to enable learners to describe how the Goldstone-Apple Valley Radio Telescope (GAVRT) system functions in support of Apple Valley Science and Technology Center's (AVSTC) client schools' radio astronomy activities.

  5. Mechanical control over valley magnetotransport in strained graphene

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Ning, E-mail: maning@stu.xjtu.edu.cn [Department of Physics, MOE Key Laboratory of Advanced Transducers and Intelligent Control System, Taiyuan University of Technology, Taiyuan 030024 (China); Department of Applied Physics, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi' an Jiaotong University, Xi' an 710049 (China); Zhang, Shengli, E-mail: zhangsl@mail.xjtu.edu.cn [Department of Applied Physics, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi' an Jiaotong University, Xi' an 710049 (China); Liu, Daqing, E-mail: liudq@cczu.edu.cn [School of Mathematics and Physics, Changzhou University, Changzhou 213164 (China)

    2016-05-06

    Recent experiments report that the graphene exhibits Landau levels (LLs) that form in the presence of a uniform strain pseudomagnetic field with magnitudes up to hundreds of tesla. We further reveal that the strain removes the valley degeneracy in LLs, and leads to a significant valley polarization with inversion symmetry broken. This accordingly gives rise to the well separated valley Hall plateaus and Shubnikov–de Haas oscillations. These effects are absent in strainless graphene, and can be used to generate and detect valley polarization by mechanical means, forming the basis for the new paradigm “valleytronics” applications. - Highlights: • We explore the mechanical strain effects on the valley magnetotransport in graphene. • We analytically derive the dc collisional and Hall conductivities under strain. • The strain removes the valley degeneracy in Landau levels. • The strain causes a significant valley polarization with inversion symmetry broken. • The strain leads to the well separated valley Hall and Shubnikov–de Haas effects.

  6. Silicon processing for photovoltaics II

    CERN Document Server

    Khattak, CP

    2012-01-01

    The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

  7. Clean Cities Award Winning Coalition: Coachella Valley

    Energy Technology Data Exchange (ETDEWEB)

    ICF Kaiser

    1999-05-20

    Southern California's Coachella Valley became a Clean Cities region in 1996. Since then, they've made great strides. SunLine Transit, the regional public transit provider, was the first transit provider to replace its entire fleet with compressed natural gas buses. They've also built the foundation for a nationally recognized model in the clean air movement, by partnering with Southern California Gas Company to install a refueling station and developing a curriculum for AFV maintenance with the College of the Desert. Today the valley is home to more than 275 AFVs and 15 refueling stations.

  8. LSSA large area silicon sheet task continuous Czochralski process development

    Science.gov (United States)

    Rea, S. N.

    1978-01-01

    A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.

  9. West Valley high-level nuclear waste glass development: a statistically designed mixture study

    Energy Technology Data Exchange (ETDEWEB)

    Chick, L.A.; Bowen, W.M.; Lokken, R.O.; Wald, J.W.; Bunnell, L.R.; Strachan, D.M.

    1984-10-01

    The first full-scale conversion of high-level commercial nuclear wastes to glass in the United States will be conducted at West Valley, New York, by West Valley Nuclear Services Company, Inc. (WVNS), for the US Department of Energy. Pacific Northwest Laboratory (PNL) is supporting WVNS in the design of the glass-making process and the chemical formulation of the glass. This report describes the statistically designed study performed by PNL to develop the glass composition recommended for use at West Valley. The recommended glass contains 28 wt% waste, as limited by process requirements. The waste loading and the silica content (45 wt%) are similar to those in previously developed waste glasses; however, the new formulation contains more calcium and less boron. A series of tests verified that the increased calcium results in improved chemical durability and does not adversely affect the other modeled properties. The optimization study assessed the effects of seven oxide components on glass properties. Over 100 melts combining the seven components into a wide variety of statistically chosen compositions were tested. Viscosity, electrical conductivity, thermal expansion, crystallinity, and chemical durability were measured and empirically modeled as a function of the glass composition. The mathematical models were then used to predict the optimum formulation. This glass was tested and adjusted to arrive at the final composition recommended for use at West Valley. 56 references, 49 figures, 18 tables.

  10. Saxton Transportation Operations Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Saxton Transportation Operations Laboratory (Saxton Laboratory) is a state-of-the-art facility for conducting transportation operations research. The laboratory...

  11. Laboratory investigations

    International Nuclear Information System (INIS)

    Handin, J.

    1980-01-01

    Our task is to design mined-repository systems that will adequately secure high-level nuclear waste for at least 10,000 yr and that will be mechanically stable for 50 to 100-yr periods of retrievability during which mistakes could be corrected and a valuable source of energy could be reclaimed, should national policy on the reprocessing of spent fuel ever change. The only credible path for the escape of radionuclides from the repository to the biosphere is through ground-water, and in hard rock, bulk permeability is largely governed by natural and artificial fracture systems. Catastrophic failure of an excavation in hard rock is likely to occur at the weakest links - the discontinuities in the rock mass that is perturbed first by mining and then by radiogenic heating. The laboratory can contribute precise measurements of the pertinent thermomechanical, hydrological and chemical properties and improve our understanding of the fundamental processes through careful experiments under well controlled conditions that simulate the prototype environment. Thus laboratory investigations are necessary, but they are not sufficient, for conventional sample sizes are small relative to natural defects like joints - i.e., the rock mass is not a continuum - and test durations are short compared to those that predictive modeling must take into account. Laboratory investigators can contribute substantially more useful data if they are provided facilities for testing large specimens(say one cubic meter) and for creep testing of all candidate host rocks. Even so, extrapolations of laboratory data to the field in neither space nor time are valid without the firm theoretical foundations yet to be built. Meanwhile in-situ measurements of structure-sensitive physical properties and access to direct observations of rock-mass character will be absolutely necessary

  12. Culham Laboratory

    International Nuclear Information System (INIS)

    1980-06-01

    The report contains summaries of work carried out under the following headings: fusion research experiments; U.K. contribution to the JET project; supporting studies; theoretical plasma physics, computational physics and computing; fusion reactor studies; engineering and technology; contract research; external relations; staff, finance and services. Appendices cover main characteristics of Culham fusion experiments, staff, extra-mural projects supported by Culham Laboratory, and a list of papers written by Culham staff. (U.K.)

  13. Plating laboratory

    International Nuclear Information System (INIS)

    Seamster, A.G.; Weitkamp, W.G.

    1984-01-01

    The lead plating of the prototype resonator has been conducted entirely in the plating laboratory at SUNY Stony Brook. Because of the considerable cost and inconvenience in transporting personnel and materials to and from Stony Brook, it is clearly impractical to plate all the resonators there. Furthermore, the high-beta resonator cannot be accommodated at Stony Brook without modifying the set up there. Consequently the authors are constructing a plating lab in-house

  14. Underground laboratories

    Energy Technology Data Exchange (ETDEWEB)

    Bettini, A., E-mail: Bettini@pd.infn.i [Padua University and INFN Section, Dipartimento di Fisca G. Galilei, Via Marzolo 8, 35131 Padova (Italy); Laboratorio Subterraneo de Canfranc, Plaza Ayuntamiento n1 2piso, Canfranc (Huesca) (Spain)

    2011-01-21

    Underground laboratories provide the low radioactive background environment necessary to frontier experiments in particle and nuclear astrophysics and other disciplines, geology and biology, that can profit of their unique characteristics. The cosmic silence allows to explore the highest energy scales that cannot be reached with accelerators by searching for extremely rare phenomena. I will briefly review the facilities that are operational or in an advanced status of approval around the world.

  15. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  16. Light emitting structures porous silicon-silicon substrate

    International Nuclear Information System (INIS)

    Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

    1999-01-01

    The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

  17. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  18. 27 CFR 9.27 - Lime Kiln Valley.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Lime Kiln Valley. 9.27... OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.27 Lime Kiln Valley. (a) Name. The name of the viticultural area described in this section is “Lime Kiln Valley...

  19. An example of Alaknanda valley, Garhwal Himalaya, India

    Indian Academy of Sciences (India)

    2014) have been best explained by the geometry .... flows through narrow valley confined by the steep valley slopes. ... valley (figure 3b) which opens up around Srina- ... Method. 4.1 Drainage basin and stream network. Digital Elevation Model (DEM) helps in extracting ... was processed to fill the pits or sinks, and to obtain.

  20. Babesiosis in Lower Hudson Valley, New York

    Centers for Disease Control (CDC) Podcasts

    2011-05-12

    This podcast discusses a study about an increase in babesiosis in the Lower Hudson Valley of New York state. Dr. Julie Joseph, Assistant Professor of Medicine at New York Medical College, shares details of this study.  Created: 5/12/2011 by National Center for Emerging Zoonotic and Infectious Diseases (NCEZID).   Date Released: 5/23/2011.

  1. SADF EARLYIRON AGE EXCAVATIONS IN THETUGELA VALLEY

    African Journals Online (AJOL)

    effect of the high flanking ridges of the Tugela. Valley. The high ... fire. Police intervention and the Bhengu superior- ity in numbers brought an end to the fights just prior to the ..... The tail and three legs of the reptile are miss- ing . . ~C£.'.':.-:".

  2. Potential hydrologic characterization wells in Amargosa Valley

    International Nuclear Information System (INIS)

    Lyles, B.; Mihevc, T.

    1994-09-01

    More than 500 domestic, agricultural, and monitoring wells were identified in the Amargosa Valley. From this list, 80 wells were identified as potential hydrologic characterization wells, in support of the US Department of Energy (DOE) Underground Test Area/Remedial Investigation and Feasibility Study (UGTA/RIFS). Previous hydrogeologic studies have shown that groundwater flow in the basin is complex and that aquifers may have little lateral continuity. Wells located more than 10 km or so from the Nevada Test Site (NTS) boundary may yield data that are difficult to correlate to sources from the NTS. Also, monitoring well locations should be chosen within the guidelines of a hydrologic conceptual model and monitoring plan. Since these do not exist at this time, recompletion recommendations will be restricted to wells relatively close (approximately 20 km) to the NTS boundary. Recompletion recommendations were made for two abandoned agricultural irrigation wells near the town of Amargosa Valley (previously Lathrop Wells), for two abandoned wildcat oil wells about 10 km southwest of Amargosa Valley, and for Test Well 5 (TW-5), about 10 km east of Amargosa Valley

  3. Geomorphological hazards in Swat valley, Pakistan

    International Nuclear Information System (INIS)

    Usman, A.

    1999-01-01

    This study attempts to describe, interpret and analyze, in depth, the varied geomorphological hazards and their impacts prevailing in the swat valley locate in the northern hilly and mountainous regions of Pakistan. The hills and mountains re zones of high geomorphological activity with rapid rates of weathering, active tectonic activities, abundant precipitation, rapid runoff and heavy sediment transport. Due to the varied topography, lithology, steep slope, erodible soil, heavy winter snowfall and intensive rainfall in the spring and summer seasons, several kinds of geomorphological hazards, such as geomorphic gravitational hazards, Fluvial hazards, Glacial hazards, Geo tectonic hazards, are occurring frequently in swat valley. Amongst them, geomorphic gravitational hazards, such as rock fall rock slide, debris slide mud flow avalanches, are major hazards in mountains and hills while fluvial hazards and sedimentation are mainly confined to the alluvial plain and lowlands of the valley. The Getechtonic hazards, on the other hand, have wide spread distribution in the valley the magnitude and occurrence of each king of hazard is thus, varied according to intensity of process and physical geographic environment. This paper discusses the type distribution and damage due to the various geomorphological hazards and their reduction treatments. The study would to be of particular importance and interest to both natural and social scientists, as well as planner, environmentalists and decision-makers for successful developmental interventions in the region. (author)

  4. Antelope Valley Community College District Education Center.

    Science.gov (United States)

    Newmyer, Joe

    An analysis is provided of a proposal to the Board of Governors of the California Community Colleges by the Antelope Valley Community College District (AVCCD) to develop an education center in Palmdale to accommodate rapid growth. First, pros and cons are discussed for the following major options: (1) increase utilization and/or expand the…

  5. Ecological Researches in the Yagnob Valley

    International Nuclear Information System (INIS)

    Razykov, Z.A.; Yunusov, M.M.; Bezzubov, N.I.; Murtazaev, Kh.; Fajzullaev, B.G.

    2002-01-01

    The article dwells on the resents of the estimation of the ecology surroundings of the Yagnob Valley. The researches included appraisal of radiation background, determination of the amount of heavy and radioactive elements in soil, bottom sedimentations, ashes in plants, water in rivers and wells. Designing on the premise of the researches implemented the ecology surrounding are estimated as propitious man's habitation. (Authors)

  6. 27 CFR 9.174 - Yadkin Valley.

    Science.gov (United States)

    2010-04-01

    ...”. (b) Approved maps. The appropriate maps for determining the boundaries of the Yadkin Valley...-Salem, N.C.; VA; Tenn. (1953, Limited Revision 1962), and, (2) Charlotte, North Carolina; South Carolina... North Carolina within Wilkes, Surry, Yadkin and portions of Stokes, Forsyth, Davidson, and Davie...

  7. 27 CFR 9.41 - Lancaster Valley.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Lancaster Valley. 9.41 Section 9.41 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT... through the town of Gap and along Mine Ridge to the 76°07′30″ west longitude line in Paradise Township. (9...

  8. NNSS Soils Monitoring: Plutonium Valley (CAU 366)

    International Nuclear Information System (INIS)

    Miller, Julianne J.; Mizell, Steve A.; Nikolich, George; Campbell, Scott

    2012-01-01

    The U.S. Department of Energy (DOE) National Nuclear Security Administration (NNSA), Nevada Site Office (NSO), Environmental Restoration Soils Activity has authorized the Desert Research Institute (DRI) to conduct field assessments of potential sediment transport of contaminated soil from Corrective Action Unit (CAU) 366, Area 11 Plutonium Valley Dispersion Sites Contamination Area (CA) during precipitation runoff events.

  9. College in Paradise! (Paradise Valley Shopping Mall).

    Science.gov (United States)

    Schoolland, Lucile B.

    Rio Salado Community College (RSCC), a non-campus college within the Maricopa Community College District, offers hundreds of day, late afternoon, and evening classes at locations throughout the county. The Paradise Valley community had always participated heavily in the evening classes offered by RSCC at local high schools. In fall 1982, an effort…

  10. Temperature profiles from Salt Valley, Utah

    Science.gov (United States)

    Sass, J. H.; Lachenbruch, A. H.; Smith, E. P.

    Temperature profiles were obtained in the nine drilled wells as part of a thermal study of the Salt Valley anticline, Paradox Basin, Utha. Thermal conductivities were also measured on 10 samples judged to be representative of the rocks encountered in the deepest hole. The temperature profiles and thermal conductivities are presented, together with preliminary interpretive remarks and suggestions for additional work.

  11. Poultry Slaughter facility Zambezi Valley, Mozambique

    NARCIS (Netherlands)

    Vernooij, A.G.; Wilschut, S.

    2015-01-01

    This business plan focuses on the establishment of a slaughterhouse, one of the essential elements of a sustainable and profitable poultry meat value chain. There is a growing demand for poultry meat in the Zambezi Valley, and currently a large part of the consumed broilers comes from other parts of

  12. Business plan Hatchery Facility Zambezi Valley, Mozambique

    NARCIS (Netherlands)

    Vernooij, A.G.; Wilschut, S.

    2015-01-01

    This business plan focuses on the establishment of a hatchery, one of the essential elements of a sustainable and profitable poultry meat value chain. There is a growing demand for poultry meat in the Zambezi Valley, and currently a large part of the consumed broilers comes from other parts of the

  13. Eco-Hydrological Modelling of Stream Valleys

    DEFF Research Database (Denmark)

    Johansen, Ole

    a flow reduction in the order of 20 % in a natural spring, whereas no effect could be measured in neither short nor deep piezometers in the river valley 50 m from the spring. Problems of measuring effects of pumping are partly caused by disturbances from natural water level fluctuations. In this aspect...

  14. The LHCb Silicon Tracker

    CERN Document Server

    Elsasser, Ch; Gallas Torreira, A; Pérez Trigo, A; Rodríguez Pérez, P; Bay, A; Blanc, F; Dupertuis, F; Haefeli, G; Komarov, I; Märki, R; Muster, B; Nakada, T; Schneider, O; Tobin, M; Tran, M T; Anderson, J; Bursche, A; Chiapolini, N; Saornil, S; Steiner, S; Steinkamp, O; Straumann, U; Vollhardt, A; Britsch, M; Schmelling, M; Voss, H; Okhrimenko, O; Pugatch, V

    2013-01-01

    The aim of the LHCb experiment is to study rare heavy quark decays and CP vio- lation with the high rate of beauty and charmed hadrons produced in $pp$ collisions at the LHC. The detector is designed as a single-arm forward spectrometer with excellent tracking and particle identification performance. The Silicon Tracker is a key part of the tracking system to measure the particle trajectories to high precision. This paper reports the performance as well as the results of the radiation damage monitoring based on leakage currents and on charge collection efficiency scans during the data taking in the LHC Run I.

  15. Photovoltaics: sunshine and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Stirzaker, Mike

    2006-05-15

    Spain's photovoltaic sector grew rapidly in 2004 only to slow down in 2005. While a State-guaranteed feed-in tariff is in place to drive a take-off, some of the smaller administrative cogs are buckling under the pressure. Projects are being further slowed by soaring world silicon prices and module shortages. Nevertheless, market volume is higher than ever before, and bio capital from both home and abroad is betting that the Spanish take-off is around the corner. (Author)

  16. Construction and test of a silicon drift chamber

    International Nuclear Information System (INIS)

    Holl, P.

    1985-06-01

    The present thesis presents the first fully applicable silicon detectors which work as drift chambers. Four different types of detectors were constructed. By a suitable geometry and electronic lay-out one- and two-dimensional position measurements were made possible. Chapter 2 describes function and construction of the detectors, chapter 3 their fabrication process. In chapter 4 construction and results of the test of a silicon drift chamber under laboratory conditions are described. By variation of the applied voltages the optimal operational conditions could be determined and material properties of the silicon, as for instance the electron mobility measured. A position resolution better than 5 μm at a drift length up to 4 mm was reached. Chapter 5 presents the results of the test of a silicon drift chamber under real experimental conditions in a particle beam of the super proton synchroton (SPS) of CERN. The best position resolution measured there is 10 μm. Chapter 6 summarizes the obtained results and discusses finally application possibilities and improvement proposals for silicon drift chambers. (orig./HSI) [de

  17. Rapid Prototyping of Nanofluidic Slits in a Silicone Bilayer

    Science.gov (United States)

    Kole, Thomas P.; Liao, Kuo-Tang; Schiffels, Daniel; Ilic, B. Robert; Strychalski, Elizabeth A.; Kralj, Jason G.; Liddle, J. Alexander; Dritschilo, Anatoly; Stavis, Samuel M.

    2015-01-01

    This article reports a process for rapidly prototyping nanofluidic devices, particularly those comprising slits with microscale widths and nanoscale depths, in silicone. This process consists of designing a nanofluidic device, fabricating a photomask, fabricating a device mold in epoxy photoresist, molding a device in silicone, cutting and punching a molded silicone device, bonding a silicone device to a glass substrate, and filling the device with aqueous solution. By using a bilayer of hard and soft silicone, we have formed and filled nanofluidic slits with depths of less than 400 nm and aspect ratios of width to depth exceeding 250 without collapse of the slits. An important attribute of this article is that the description of this rapid prototyping process is very comprehensive, presenting context and details which are highly relevant to the rational implementation and reliable repetition of the process. Moreover, this process makes use of equipment commonly found in nanofabrication facilities and research laboratories, facilitating the broad adaptation and application of the process. Therefore, while this article specifically informs users of the Center for Nanoscale Science and Technology (CNST) at the National Institute of Standards and Technology (NIST), we anticipate that this information will be generally useful for the nanofabrication and nanofluidics research communities at large, and particularly useful for neophyte nanofabricators and nanofluidicists. PMID:26958449

  18. Magnetically retained silicone facial prosthesis

    African Journals Online (AJOL)

    2013-06-09

    Jun 9, 2013 ... Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention.

  19. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  20. Radiation hard cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

    2002-01-01

    It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

  1. Recent developments in silicon calorimetry

    International Nuclear Information System (INIS)

    Brau, J.E.

    1990-11-01

    We present a survey of some of the recent calorimeter applications of silicon detectors. The numerous attractive features of silicon detectors are summarized, with an emphasis on those aspects important to calorimetry. Several of the uses of this technology are summarized and referenced. We consider applications for electromagnetic calorimetry, hadronic calorimetry, and proposals for the SSC

  2. Amorphous silicon ionizing particle detectors

    Science.gov (United States)

    Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  3. Flowmeter with silicon flow tube

    NARCIS (Netherlands)

    Lammerink, Theodorus S.J.; Dijkstra, Marcel; Haneveld, J.; Lötters, Joost Conrad

    2009-01-01

    A flowmeter comprising a system chip with a silicon substrate provided on a carrier, in an opening whereof at least one silicon flow tube is provided for transporting a medium whose flow rate is to be measured, said tube having two ends that issue via a wall of the opening into channels coated with

  4. Luneburg lens in silicon photonics.

    Science.gov (United States)

    Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

    2011-03-14

    The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

  5. The geochemistry of groundwater resources in the Jordan Valley: The impact of the Rift Valley brines

    Science.gov (United States)

    Farber, E.; Vengosh, A.; Gavrieli, I.; Marie, Amarisa; Bullen, T.D.; Mayer, B.; Polak, A.; Shavit, U.

    2007-01-01

    The chemical composition of groundwater in the Jordan Valley, along the section between the Sea of Galilee and the Dead Sea, is investigated in order to evaluate the origin of the groundwater resources and, in particular, to elucidate the role of deep brines on the chemical composition of the regional groundwater resources in the Jordan Valley. Samples were collected from shallow groundwater in research boreholes on two sites in the northern and southern parts of the Jordan Valley, adjacent to the Jordan River. Data is also compiled from previous published studies. Geochemical data (e.g., Br/Cl, Na/Cl and SO4/Cl ratios) and B, O, Sr and S isotopic compositions are used to define groundwater groups, to map their distribution in the Jordan valley, and to evaluate their origin. The combined geochemical tools enabled the delineation of three major sources of solutes that differentially affect the quality of groundwater in the Jordan Valley: (1) flow and mixing with hypersaline brines with high Br/Cl (>2 ?? 10-3) and low Na/Cl (shallow saline groundwaters influenced by brine mixing exhibit a north-south variation in their Br/Cl and Na/Cl ratios. This chemical trend was observed also in hypersaline brines in the Jordan valley, which suggests a local mixing process between the water bodies. ?? 2007 Elsevier Ltd. All rights reserved.

  6. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  7. A valley-filtering switch based on strained graphene.

    Science.gov (United States)

    Zhai, Feng; Ma, Yanling; Zhang, Ying-Tao

    2011-09-28

    We investigate valley-dependent transport through a graphene sheet modulated by both the substrate strain and the fringe field of two parallel ferromagnetic metal (FM) stripes. When the magnetizations of the two FM stripes are switched from the parallel to the antiparallel alignment, the total conductance, valley polarization and valley conductance excess change greatly over a wide range of Fermi energy, which results from the dependence of the valley-related transmission suppression on the polarity configuration of inhomogeneous magnetic fields. Thus the proposed structure exhibits the significant features of a valley-filtering switch and a magnetoresistance device.

  8. A valley-filtering switch based on strained graphene

    International Nuclear Information System (INIS)

    Zhai Feng; Ma Yanling; Zhang Yingtao

    2011-01-01

    We investigate valley-dependent transport through a graphene sheet modulated by both the substrate strain and the fringe field of two parallel ferromagnetic metal (FM) stripes. When the magnetizations of the two FM stripes are switched from the parallel to the antiparallel alignment, the total conductance, valley polarization and valley conductance excess change greatly over a wide range of Fermi energy, which results from the dependence of the valley-related transmission suppression on the polarity configuration of inhomogeneous magnetic fields. Thus the proposed structure exhibits the significant features of a valley-filtering switch and a magnetoresistance device. (paper)

  9. Chalcogen donnors in silicon

    International Nuclear Information System (INIS)

    Scolfaro, L.M.R.

    1985-01-01

    The electronic stucture of chalcogen impurities in silicon which give rise to deep levels in the forbidden band gap of that semiconductor is studied. The molecular cluster model within the formalism of the multiple scattering method in the Xα local density approximation was used . The surface orbitals were treated by using the Watson sphere model. Studies were carried out for the isolated substitutional sulfur and selenium impurities (Si:S and Si:Se). A pioneer investigation was performed for the nearest-neighbor impurity pairs of sulfur and selenium (Si:S 2 and Si:Se 2 ). All the systems were also analysed in the positive charge states (Si:S + , Si:Se + and Si:Se 2 + ) and for the isolated impurities the calculations were carried out to the spin polarized limit. The obtained results were used to interpret recent photoconductivity, photocapitance, EPR and DLTS data on these centers. It was observed that the adopted model is able to provide a satisfactory description of the electronic structure of the chalcogen impurity centers in silicon. (autor) [pt

  10. Flexible silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Blakers, A.W.; Armour, T. [Centre for Sustainable Energy Systems, The Australian National University, Canberra ACT 0200 (Australia)

    2009-08-15

    In order to be useful for certain niche applications, crystalline silicon solar cells must be able to sustain either one-time flexure or multiple non-critical flexures without significant loss of strength or efficiency. This paper describes experimental characterisation of the behaviour of thin crystalline silicon solar cells, under either static or repeated flexure, by flexing samples and recording any resulting changes in performance. Thin SLIVER cells were used for the experiment. Mechanical strength was found to be unaffected after 100,000 flexures. Solar conversion efficiency remained at greater than 95% of the initial value after 100,000 flexures. Prolonged one-time flexure close to, but not below, the fracture radius resulted in no significant change of properties. For every sample, fracture occurred either on the first flexure to a given radius of curvature, or not at all when using that radius. In summary, for a given radius of curvature, either the flexed solar cells broke immediately, or they were essentially unaffected by prolonged or multiple flexing. (author)

  11. ATLAS Silicon Microstrip Tracker

    CERN Document Server

    Haefner, Petra; The ATLAS collaboration

    2010-01-01

    The SemiConductor Tracker (SCT), made up from silicon micro-strip detectors is the key precision tracking device in ATLAS, one of the experiments at CERN LHC. The completed SCT is in very good shape: 99.3% of the SCT strips are operational, noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector and observed problems, with stress on the sensor and electronics performance. TWEPP Summary In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton- proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The SemiConductor Tracker (SCT) is the key precision tracking device in ATLAS, made up from silicon micro-strip detectors processed in the planar p-in-n technology. The signal from the strips is processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data i...

  12. Silicon-CsI detector array for heavy-ion reactions

    CERN Document Server

    Norbeck, E; Pogodin, P I; Cheng, Y W; Ingram, F D; Bjarki, O; Grévy, S; Magestro, D J; Molen, A M V; Westfall, G D

    2000-01-01

    An array of 60 silicon-CsI(Tl) detector telescopes has been developed along with associated electronics. The close packing of the telescopes required novel designs for the photodiodes and the silicon DELTA E detectors. Newly developed electronics include preamplifiers, shaping amplifiers, test pulse circuitry, and a module to monitor leakage currents in the silicon diodes. The array covers angles from 5 deg. to 18 deg. in the 4 pi Array at the National Superconducting Cyclotron Laboratory at Michigan State University. It measures protons to 150 MeV and has isotopic resolution for intermediate mass nuclei.

  13. Band structure of germanium carbides for direct bandgap silicon photonics

    Energy Technology Data Exchange (ETDEWEB)

    Stephenson, C. A., E-mail: cstephe3@nd.edu; Stillwell, R. A.; Wistey, M. A. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); O' Brien, W. A. [Rigetti Quantum Computing, 775 Heinz Avenue, Berkeley, California 94710 (United States); Penninger, M. W. [Honeywell UOP, Des Plaines, Illinois 60016 (United States); Schneider, W. F. [Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Gillett-Kunnath, M. [Department of Chemistry, Syracuse University, Syracuse, New York 13244 (United States); Zajicek, J. [Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Yu, K. M. [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2016-08-07

    Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge{sub 1−x}C{sub x} (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge{sub 0.998}C{sub 0.002} shows a bandgap reduction supporting these results. Growth of Ge{sub 0.998}C{sub 0.002} using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III–V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

  14. Field-induced negative differential spin lifetime in silicon.

    Science.gov (United States)

    Li, Jing; Qing, Lan; Dery, Hanan; Appelbaum, Ian

    2012-04-13

    We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.

  15. Induced dynamic nonlinear ground response at Gamer Valley, California

    Science.gov (United States)

    Lawrence, Z.; Bodin, P.; Langston, C.A.; Pearce, F.; Gomberg, J.; Johnson, P.A.; Menq, F.-Y.; Brackman, T.

    2008-01-01

    We present results from a prototype experiment in which we actively induce, observe, and quantify in situ nonlinear sediment response in the near surface. This experiment was part of a suite of experiments conducted during August 2004 in Garner Valley, California, using a large mobile shaker truck from the Network for Earthquake Engineering Simulation (NEES) facility. We deployed a dense accelerometer array within meters of the mobile shaker truck to replicate a controlled, laboratory-style soil dynamics experiment in order to observe wave-amplitude-dependent sediment properties. Ground motion exceeding 1g acceleration was produced near the shaker truck. The wave field was dominated by Rayleigh surface waves and ground motions were strong enough to produce observable nonlinear changes in wave velocity. We found that as the force load of the shaker increased, the Rayleigh-wave phase velocity decreased by as much as ???30% at the highest frequencies used (up to 30 Hz). Phase velocity dispersion curves were inverted for S-wave velocity as a function of depth using a simple isotropic elastic model to estimate the depth dependence of changes to the velocity structure. The greatest change in velocity occurred nearest the surface, within the upper 4 m. These estimated S-wave velocity values were used with estimates of surface strain to compare with laboratory-based shear modulus reduction measurements from the same site. Our results suggest that it may be possible to characterize nonlinear soil properties in situ using a noninvasive field technique.

  16. Seismic study of soil dynamics at Garner Valley, California

    International Nuclear Information System (INIS)

    Archuleta, R.J.; Seale, S.H.

    1990-01-01

    The Garner Valley downhole array (GVDA) of force-balanced accelerometers was designed to determine the effect that near-surface soil layers have on surface ground motion by measuring in situ seismic waves at various depths. Although there are many laboratory, theoretical and numerical studies that are used to predict the effects that local site geology might have on seismic waves, there are very few direct measurements that can be used to confirm the predictions made by these methods. The effects of local site geology on seismic ground motions are critical for estimating the base motion of structures. The variations in site amplifications at particular periods can range over a factor of 20 or more in comparing amplitude spectra from rock and soil sites, e.g., Mexico City (1985) or San Francisco (1989). The basic phenomenon of nonlinear soil response, and by inference severe attenuation of seismic waves, has rarely been measured although it is commonly observed in laboratory experiments. The basic question is whether or not the local site geology amplifies are attenuates the seismic ground motion. Because the answer depends on the interaction between the local site geology and the amplitude as well as the frequency content of the incoming seismic waves, the in situ measurements must sample the depth variations of the local structure as well as record seismic waves over as wide a range as possible in amplitude and frequency

  17. Testing of the West Valley Vitrification Facility transfer cart control system

    International Nuclear Information System (INIS)

    Halliwell, J.W.; Bradley, E.C.

    1995-01-01

    Oak Ridge National Laboratory (ORNL) has designed and tested the control system for the West Valley Demonstration Project Vitrification Facility transfer cart. The transfer cart will transfer canisters of vitrified high-level waste remotely within the Vitrification Facility. The control system operates the cart under battery power by wireless control. The equipment includes cart-mounted control electronics, battery charger, control pendants, engineer's console, and facility antennas. Testing was performed in several phases of development: (1) prototype equipment was built and tested during design, (2) board-level testing was then performed at ORNL during fabrication, and (3) system-level testing was then performed by ORNL at the fabrication subcontractor's facility for the completed cart system. These tests verified (1) the performance of the cart relative to design requirements and (2) operation of various built-in cart features. The final phase of testing is planned to be conducted during installation at the West Valley Vitrification Facility

  18. Quantitative analysis of surface characteristics and morphology in Death Valley, California using AIRSAR data

    Science.gov (United States)

    Kierein-Young, K. S.; Kruse, F. A.; Lefkoff, A. B.

    1992-01-01

    The Jet Propulsion Laboratory Airborne Synthetic Aperture Radar (JPL-AIRSAR) is used to collect full polarimetric measurements at P-, L-, and C-bands. These data are analyzed using the radar analysis and visualization environment (RAVEN). The AIRSAR data are calibrated using in-scene corner reflectors to allow for quantitative analysis of the radar backscatter. RAVEN is used to extract surface characteristics. Inversion models are used to calculate quantitative surface roughness values and fractal dimensions. These values are used to generate synthetic surface plots that represent the small-scale surface structure of areas in Death Valley. These procedures are applied to a playa, smooth salt-pan, and alluvial fan surfaces in Death Valley. Field measurements of surface roughness are used to verify the accuracy.

  19. Resource Limitations on Soil Microbial Activity in an Antarctic Dry Valley

    DEFF Research Database (Denmark)

    Sparrow, Asley; Gregorich, Ed; Hopkins, David

    2011-01-01

    Although Antarctic dry valley soils function under some of the harshest environmental conditions on the planet, there is significant biological activity concentrated in small areas in the landscape. These productive areas serve as a source of C and N in organic matter redistributed...... to the surrounding biologically impoverished soils. We conducted a 3-yr replicated field experiment involving soil amendment with C and N in simple (glucose and NH4Cl) and complex (glycine and lacustrine detritus) forms to evaluate the resource limitations on soil microbial activity in an Antarctic dry valley....... The respiratory response for all substrates was slow, with a significant but weak response to NH4Cl, followed by a more widespread response to all substrates after 2 yr and in laboratory incubations conducted 3 yr after substrate addition. This response suggests that the soil microbial community is N limited and...

  20. Insiders Views of the Valley of Death Behavioral and Institutional Perspectives

    Energy Technology Data Exchange (ETDEWEB)

    Wolfe, Amy K [ORNL; Bjornstad, David J [ORNL; Shumpert, Barry L [ORNL; Wang, Stephanie [ORNL; Lenhardt, W Christopher [ORNL; Campa Ayala, Maria F [ORNL

    2014-01-01

    Valley of death describes the metaphorical depths to which promising science and technology too often plunge, never to emerge and reach their full potential. Behavioral and institutional perspectives help in understanding the implications of choices that inadvertently lead into rather than over the valley of death. A workshop conducted among a diverse set of scientists, managers, and technology transfer staff at a U.S. national laboratory is a point of departure for discussing behavioral and institutional elements that promote or impede the pathway from research toward use, and for suggesting actionable measures that can facilitate the flow of information and products from research toward use. In the complex systems that comprise research institutions, where competing pressures can create barriers to information or technology transfer, one recommendation is to re-frame the process as a more active ushering toward use.

  1. Silicon position sensitive detectors for the Helios (NA 34) experiment

    Energy Technology Data Exchange (ETDEWEB)

    Engels, E Jr; Mani, S; Manns, T; Plants, D; Shepard, P F; Thompson, J A; Tosh, R; Chand, T; Shivpuri, R; Baker, W

    1987-01-15

    The design construction and testing of X-Y tracking modules for a silicon microstrip vertex detector for use in Fermilab experiment E706 is discussed. A successful adaptation of various technologies, essential for instrumenting this class of detectors at a university laboratory is described. Emphasis is placed on considerable cost reduction, design flexibiity and more rapid turnover with a view toward large detectors for the future.

  2. Groundwater quality in the Antelope Valley, California

    Science.gov (United States)

    Dawson, Barbara J. Milby; Belitz, Kenneth

    2012-01-01

    Groundwater provides more than 40 percent of California’s drinking water. To protect this vital resource, the State of California created the Groundwater Ambient Monitoring and Assessment (GAMA) Program. The Priority Basin Project of the GAMA Program provides a comprehensive assessment of the State’s groundwater quality and increases public access to groundwater-quality information. Antelope Valley is one of the study areas being evaluated. The Antelope study area is approximately 1,600 square miles (4,144 square kilometers) and includes the Antelope Valley groundwater basin (California Department of Water Resources, 2003). Antelope Valley has an arid climate and is part of the Mojave Desert. Average annual rainfall is about 6 inches (15 centimeters). The study area has internal drainage, with runoff from the surrounding mountains draining towards dry lakebeds in the lower parts of the valley. Land use in the study area is approximately 68 percent (%) natural (mostly shrubland and grassland), 24% agricultural, and 8% urban. The primary crops are pasture and hay. The largest urban areas are the cities of Palmdale and Lancaster (2010 populations of 152,000 and 156,000, respectively). Groundwater in this basin is used for public and domestic water supply and for irrigation. The main water-bearing units are gravel, sand, silt, and clay derived from surrounding mountains. The primary aquifers in Antelope Valley are defined as those parts of the aquifers corresponding to the perforated intervals of wells listed in the California Department of Public Health database. Public-supply wells in Antelope Valley are completed to depths between 360 and 700 feet (110 to 213 meters), consist of solid casing from the land surface to a depth of 180 to 350 feet (55 to 107 meters), and are screened or perforated below the solid casing. Recharge to the groundwater system is primarily runoff from the surrounding mountains, and by direct infiltration of irrigation and sewer and septic

  3. Groundwater quality in the Owens Valley, California

    Science.gov (United States)

    Dawson, Barbara J. Milby; Belitz, Kenneth

    2012-01-01

    Groundwater provides more than 40 percent of California’s drinking water. To protect this vital resource, the State of California created the Groundwater Ambient Monitoring and Assessment (GAMA) Program. The Priority Basin Project of the GAMA Program provides a comprehensive assessment of the State’s groundwater quality and increases public access to groundwater-quality information. Owens Valley is one of the study areas being evaluated. The Owens study area is approximately 1,030 square miles (2,668 square kilometers) and includes the Owens Valley groundwater basin (California Department of Water Resources, 2003). Owens Valley has a semiarid to arid climate, with average annual rainfall of about 6 inches (15 centimeters). The study area has internal drainage, with runoff primarily from the Sierra Nevada draining east to the Owens River, which flows south to Owens Lake dry lakebed at the southern end of the valley. Beginning in the early 1900s, the City of Los Angeles began diverting the flow of the Owens River to the Los Angeles Aqueduct, resulting in the evaporation of Owens Lake and the formation of the current Owens Lake dry lakebed. Land use in the study area is approximately 94 percent (%) natural, 5% agricultural, and 1% urban. The primary natural land cover is shrubland. The largest urban area is the city of Bishop (2010 population of 4,000). Groundwater in this basin is used for public and domestic water supply and for irrigation. The main water-bearing units are gravel, sand, silt, and clay derived from surrounding mountains. Recharge to the groundwater system is primarily runoff from the Sierra Nevada, and by direct infiltration of irrigation. The primary sources of discharge are pumping wells, evapotranspiration, and underflow to the Owens Lake dry lakebed. The primary aquifers in Owens Valley are defined as those parts of the aquifers corresponding to the perforated intervals of wells listed in the California Department of Public Health database

  4. Microscopic Identification of Prokaryotes in Modern and Ancient Halite, Saline Valley and Death Valley, California

    Science.gov (United States)

    Schubert, Brian A.; Lowenstein, Tim K.; Timofeeff, Michael N.

    2009-06-01

    Primary fluid inclusions in halite crystallized in Saline Valley, California, in 1980, 2004-2005, and 2007, contain rod- and coccoid-shaped microparticles the same size and morphology as archaea and bacteria living in modern brines. Primary fluid inclusions from a well-dated (0-100,000 years), 90 m long salt core from Badwater Basin, Death Valley, California, also contain microparticles, here interpreted as halophilic and halotolerant prokaryotes. Prokaryotes are distinguished from crystals on the basis of morphology, optical properties (birefringence), and uniformity of size. Electron micrographs of microparticles from filtered modern brine (Saline Valley), dissolved modern halite crystals (Saline Valley), and dissolved ancient halite crystals (Death Valley) support in situ microscopic observations that prokaryotes are present in fluid inclusions in ancient halite. In the Death Valley salt core, prokaryotes in fluid inclusions occur almost exclusively in halite precipitated in perennial saline lakes 10,000 to 35,000 years ago. This suggests that trapping and preservation of prokaryotes in fluid inclusions is influenced by the surface environment in which the halite originally precipitated. In all cases, prokaryotes in fluid inclusions in halite from the Death Valley salt core are miniaturized (<1 μm diameter cocci, <2.5 μm long, very rare rod shapes), which supports interpretations that the prokaryotes are indigenous to the halite and starvation survival may be the normal response of some prokaryotes to entrapment in fluid inclusions for millennia. These results reinforce the view that fluid inclusions in halite and possibly other evaporites are important repositories of microbial life and should be carefully examined in the search for ancient microorganisms on Earth, Mars, and elsewhere in the Solar System.

  5. Relationship between silicon concentration and creatinine clearance

    International Nuclear Information System (INIS)

    Miura, Y.; Nakai, K.; Itoh, C.; Horikiri, J.; Sera, K.; Sato, M.

    1998-01-01

    Silicon levels in dialysis patients are markedly increasing. Using PIXE we determined the relationship between silicon concentration and creatinine clearance in 30 samples. Urine silicon concentration were significantly correlated to creatinine clearance (p<0.001). And also serum silicon concentration were significantly correlated to creatinine clearance (p<0.0001). (author)

  6. Luminescence of porous silicon doped by erbium

    International Nuclear Information System (INIS)

    Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

    1996-01-01

    The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

  7. Apparatus for making molten silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1988-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  8. Low dose radiation damage effects in silicon strip detectors

    International Nuclear Information System (INIS)

    Wiącek, P.; Dąbrowski, W.

    2016-01-01

    The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

  9. Low dose radiation damage effects in silicon strip detectors

    Science.gov (United States)

    Wiącek, P.; Dąbrowski, W.

    2016-11-01

    The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

  10. Study of Pellets and Lumps as Raw Materials in Silicon Production from Quartz and Silicon Carbide

    Science.gov (United States)

    Dal Martello, E.; Tranell, G.; Gaal, S.; Raaness, O. S.; Tang, K.; Arnberg, L.

    2011-10-01

    The use of high-purity carbon and quartz raw materials reduces the need for comprehensive refining steps after the silicon has been produced carbothermically in the electric reduction furnace. The current work aims at comparing the reaction mechanisms and kinetics occurring in the inner part of the reduction furnace when pellets or lumpy charge is used, as well as the effect of the raw material mix. Laboratory-scale carbothermic reduction experiments have been carried out in an induction furnace. High-purity silicon carbide and two different high-purity hydrothermal quartzes were charged as raw materials at different molar ratios. The charge was in the form of lumps (size, 2-5 mm) or as powder (size, 10-20 μm), mixed and agglomerated as pellets (size, 1-3 mm) and reacted at 2273 K (2000 °C). The thermal properties of the quartzes were measured also by heating a small piece of quartz in CO atmosphere. The investigated quartzes have different reactivity in reducing atmosphere. The carbothermal reduction experiments show differences in the reacted charge between pellets and lumps as charge material. Solid-gas reactions take place from the inside of the pellets porosity, whereas reactions in lumps occur topochemically. Silicon in pellets is produced mainly in the rim zone. Larger volumes of silicon have been found when using lumpy charge. More SiO is produced when using pellets than for lumpy SiO2 for the same molar ratio and heating conditions. The two SiC polytypes used in the carbothermal reduction experiments as carbon reductants presented different reactivity.

  11. Silicon radiation detector

    International Nuclear Information System (INIS)

    Benc, I.; Kerhart, J.; Kopecky, J.; Krca, P.; Veverka, V.; Weidner, M.; Weinova, H.

    1992-01-01

    The silicon radiation detector, which is designed for the detection of electrons with energies above 500 eV and of radiation within the region of 200 to 1100 nm, comprises a PIN or PNN + type photodiode. The active acceptor photodiode is formed by a detector surface of shallow acceptor diffusion surrounded by a collector band of deep acceptor diffusion. The detector surface of shallow P-type diffusion with an acceptor concentration of 10 15 to 10 17 atoms/cm 3 reaches a depth of 40 to 100 nm. One sixth to one eighth of the collector band width is overlapped by the P + collector band at a width of 150 to 300 μm with an acceptor concentration of 10 20 to 10 21 atoms/cm 3 down a depth of 0.5 to 3 μm. This band is covered with a conductive layer, of NiCr for instance. (Z.S.)

  12. Zirconates heteroepitaxy on silicon

    Science.gov (United States)

    Fompeyrine, Jean; Seo, Jin Won; Seigwart, Heinz; Rossel, Christophe; Locquet, Jean-Pierre

    2002-03-01

    In the coming years, agressive scaling in CMOS technology will probably trigger the transition to more advanced materials, for example alternate gate dielectrics. Epitaxial thin films are attractive candidates, as long as the difficult chemical and structural issues can be solved, and superior properties can be obtained. Since very few binary oxides can match the electrical, physical and structural requirements which are needed, a combination of those binaries are used here to investigate other lattice matched oxides. We will report on the growth of crystalline zirconium oxide thin films stabilized with different cationic substitutions. All films have been grown in an oxide-MBE system by direct evaporation of the elements on silicon substrates and exposure to molecular or atomic oxygen. The conditions required to obtain epitaxial thin films will be discussed, and successful examples will be presented.

  13. Silicon in cereal straw

    DEFF Research Database (Denmark)

    Murozuka, Emiko

    Silicon (Si) is known to be a beneficial element for plants. However, when plant residues are to be used as feedstock for second generation bioenergy, Si may reduce the suitability of the biomass for biochemical or thermal conversion technologies. The objective of this PhD study was to investigate......, a mutant in Si influx transporter BdLsi1 was identified. BdLsi1 belongs to the major intrinsic protein family. The mutant BdLsi1 protein had an amino acid change from proline to serine in the highly conserved NPA motif. The mutation caused a defect in channeling of Si as well as other substrates...... such as germanium and arsenite. The Si concentration in the mutant plant was significantly reduced by more than 80 %. Rice mutants defective in Si transporters OsLsi1 and OsLsi2 also showed significantly lower straw Si concentration. It is concluded that the quality of straw biomass for bioenergy purposes can...

  14. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  15. Muonium states in silicon carbide

    International Nuclear Information System (INIS)

    Patterson, B.D.; Baumeler, H.; Keller, H.; Kiefl, R.F.; Kuendig, W.; Odermatt, W.; Schneider, J.W.; Estle, T.L.; Spencer, D.P.; Savic, I.M.

    1986-01-01

    Implanted muons in samples of silicon carbide have been observed to form paramagnetic muonium centers (μ + e - ). Muonium precession signals in low applied magnetic fields have been observed at 22 K in a granular sample of cubic β-SiC, however it was not possible to determine the hyperfine frequency. In a signal crystal sample of hexagonal 6H-SiC, three apparently isotropic muonium states were observed at 20 K and two at 300 K, all with hyperfine frequencies intermediate between those of the isotropic muonium centers in diamond and silicon. No evidence was seen of an anisotropic muonium state analogous to the Mu * state in diamond and silicon. (orig.)

  16. Characterization of Czochralski silicon detectors

    OpenAIRE

    Luukka, Panja-Riina

    2006-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

  17. Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

    Institute of Scientific and Technical Information of China (English)

    LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

    2004-01-01

    The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

  18. Kremli org - Venemaa ehitab oma Silicon Valley analoogi / Jaanus Piirsalu ; kommenteerinud Jaanus Piirsalu

    Index Scriptorium Estoniae

    Piirsalu, Jaanus, 1973-

    2010-01-01

    Venemaale kavatsetakse rajada tehnoloogia arendamise ja innovatsiooni piirkond, mille eest vastutab presidendi administratsioni asejuht Vladislav Surkov. Linnakesele on pandud tinglik nimi - Innograd. Diagrammid

  19. Managing Uncertainty through Profit sharing Contracts from medieval Italy to Silicon Valley

    NARCIS (Netherlands)

    Brouwer, M.

    2005-01-01

    Organizational innovation is essential to economic development. But, the way successful societies have organized new ventures has been remarkably similar in both past and present. The commenda organizations of medieval Italy shared many characteristics with modern startups that are financed by

  20. View from Silicon Valley: Maximizing the Scientific Impact of Global Brain Initiatives through Entrepreneurship.

    Science.gov (United States)

    Joshi, Pushkar S; Ghosh, Kunal K

    2016-11-02

    In this era of technology-driven global neuroscience initiatives, the role of the neurotechnology industry remains woefully ambiguous. Here, we explain why industry is essential to the success of these global initiatives, and how it can maximize the scientific impact of these efforts by (1) scaling and ultimately democratizing access to breakthrough neurotechnologies, and (2) commercializing technologies as part of integrated, end-to-end solutions that accelerate neuroscientific discovery. Copyright © 2016 Elsevier Inc. All rights reserved.

  1. Digital VLSI design with Verilog a textbook from Silicon Valley Polytechnic Institute

    CERN Document Server

    Williams, John Michael

    2014-01-01

    This book is structured as a step-by-step course of study along the lines of a VLSI integrated circuit design project.  The entire Verilog language is presented, from the basics to everything necessary for synthesis of an entire 70,000 transistor, full-duplex serializer-deserializer, including synthesizable PLLs.  The author includes everything an engineer needs for in-depth understanding of the Verilog language:  Syntax, synthesis semantics, simulation, and test. Complete solutions for the 27 labs are provided in the downloadable files that accompany the book.  For readers with access to appropriate electronic design tools, all solutions can be developed, simulated, and synthesized as described in the book.   A partial list of design topics includes design partitioning, hierarchy decomposition, safe coding styles, back annotation, wrapper modules, concurrency, race conditions, assertion-based verification, clock synchronization, and design for test.   A concluding presentation of special topics inclu...

  2. Digital VLSI design with Verilog a textbook from Silicon Valley Technical Institute

    CERN Document Server

    Williams, John

    2008-01-01

    This unique textbook is structured as a step-by-step course of study along the lines of a VLSI IC design project. In a nominal schedule of 12 weeks, two days and about 10 hours per week, the entire verilog language is presented, from the basics to everything necessary for synthesis of an entire 70,000 transistor, full-duplex serializer - deserializer, including synthesizable PLLs. Digital VLSI Design With Verilog is all an engineer needs for in-depth understanding of the verilog language: Syntax, synthesis semantics, simulation, and test. Complete solutions for the 27 labs are provided on the

  3. Follow the Money: Engineering at Stanford and UC Berkeley during the Rise of Silicon Valley

    Science.gov (United States)

    Adams, Stephen B.

    2009-01-01

    A comparison of the engineering schools at UC Berkeley and Stanford during the 1940s and 1950s shows that having an excellent academic program is necessary but not sufficient to make a university entrepreneurial (an engine of economic development). Key factors that made Stanford more entrepreneurial than Cal during this period were superior…

  4. Valley Topological Phases in Bilayer Sonic Crystals

    Science.gov (United States)

    Lu, Jiuyang; Qiu, Chunyin; Deng, Weiyin; Huang, Xueqin; Li, Feng; Zhang, Fan; Chen, Shuqi; Liu, Zhengyou

    2018-03-01

    Recently, the topological physics in artificial crystals for classical waves has become an emerging research area. In this Letter, we propose a unique bilayer design of sonic crystals that are constructed by two layers of coupled hexagonal array of triangular scatterers. Assisted by the additional layer degree of freedom, a rich topological phase diagram is achieved by simply rotating scatterers in both layers. Under a unified theoretical framework, two kinds of valley-projected topological acoustic insulators are distinguished analytically, i.e., the layer-mixed and layer-polarized topological valley Hall phases, respectively. The theory is evidently confirmed by our numerical and experimental observations of the nontrivial edge states that propagate along the interfaces separating different topological phases. Various applications such as sound communications in integrated devices can be anticipated by the intriguing acoustic edge states enriched by the layer information.

  5. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    OpenAIRE

    Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

    2016-01-01

    Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

  6. Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

    Directory of Open Access Journals (Sweden)

    Eugenijus SHATKOVSKIS

    2012-09-01

    Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

  7. Ward Valley transfer stalled by Babbitt

    International Nuclear Information System (INIS)

    Anon.

    1994-01-01

    Interior Secretary Bruce Babbitt announced on November 24 that he would not authorize the land transfer for the proposed low-level waste disposal site at Ward Valley, California, until a legal challenge to the facility's license and environmental impact statement is resolved. Even if the matter is resolved quickly, there exists the possibility that yet another hearing will be held on the project, even though state courts in California have stated flatly that no such hearings are required

  8. Ward Valley transfer stalled by Babbitt

    Energy Technology Data Exchange (ETDEWEB)

    1994-01-01

    Interior Secretary Bruce Babbitt announced on November 24 that he would not authorize the land transfer for the proposed low-level waste disposal site at Ward Valley, California, until a legal challenge to the facility's license and environmental impact statement is resolved. Even if the matter is resolved quickly, there exists the possibility that yet another hearing will be held on the project, even though state courts in California have stated flatly that no such hearings are required.

  9. Radiation resistant passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

    1991-01-01

    This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

  10. Cabling for an SSC silicon tracking system

    International Nuclear Information System (INIS)

    Ziock, H.; Boissevain, J.; Cooke, B.; Miller, W.

    1990-01-01

    As part of the Superconducting Super Collider Laboratory (SSCL) funded silicon tracking subsystem R ampersand D program, we examine the problems associated with cabling such a system. Different options for the cabling plant are discussed. A silicon microstrip tracking detector for an SSC experiment is an extremely complex system. The system consists of approximately 10 7 detector channels, each of which requires a communication link with the outside world and connections to the detector bias voltage supply, to a DC power supply for the onboard electronics, and to an adjustable discrimination level. The large number of channels and the short time between beam interactions (16 nanoseconds) dictates the need for high speed and large bandwidth communication channels, and a power distribution system that can handle the high current draw of the electronics including the large AC component due to their switching. At the same time the constraints imposed by the physics measurements require that the cable plant have absolutely minimal mass and radiation length. 4 refs., 2 figs

  11. Neutron spectrometry with a monolithic silicon telescope.

    Science.gov (United States)

    Agosteo, S; D'Angelo, G; Fazzi, A; Para, A Foglio; Pola, A; Zotto, P

    2007-01-01

    A neutron spectrometer was set-up by coupling a polyethylene converter with a monolithic silicon telescope, consisting of a DeltaE and an E stage-detector (about 2 and 500 microm thick, respectively). The detection system was irradiated with monoenergetic neutrons at INFN-Laboratori Nazionali di Legnaro (Legnaro, Italy). The maximum detectable energy, imposed by the thickness of the E stage, is about 8 MeV for the present detector. The scatter plots of the energy deposited in the two stages were acquired using two independent electronic chains. The distributions of the recoil-protons are well-discriminated from those due to secondary electrons for energies above 0.350 MeV. The experimental spectra of the recoil-protons were compared with the results of Monte Carlo simulations using the FLUKA code. An analytical model that takes into account the geometrical structure of the silicon telescope was developed, validated and implemented in an unfolding code. The capability of reproducing continuous neutron spectra was investigated by irradiating the detector with neutrons from a thick beryllium target bombarded with protons. The measured spectra were compared with data taken from the literature. Satisfactory agreement was found.

  12. Ground water in Dale Valley, New York

    Science.gov (United States)

    Randall, Allan D.

    1979-01-01

    Dale Valley is a broad valley segment, enlarged by glacial erosion, at the headwaters of Little Tonawanda Creek near Warsaw , New York. A thin, shallow alluvial aquifer immediately underlies the valley floor but is little used. A deeper gravel aquifer, buried beneath many feet of lake deposits, is tapped by several industrial wells. A finite-difference digital model treated the deep aquifer as two-dimensional with recharge and discharge through a confining layer. It was calibrated by simulating (1) natural conditions, (2) an 18-day aquifer test, and (3) 91 days of well-field operation. Streamflow records and model simulations suggest that in moderately wet years such as 1974, a demand of 750 gallons per minute could be met by withdrawal from the creek and from the aquifer without excessive drawdown at production wells or existing domestic wells. With reasonable but unverified model adjustments to simulate an unusually dry year, the model predicts that a demand of 600 gallons per minute could be met from the same sources. Water high in chloride has migrated from bedrock into parts of the deep aquifer. Industrial pumpage, faults in the bedrock, and the natural flow system may be responsible. (Woodard-USGS)

  13. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  14. Superconducting Super Collider silicon tracking subsystem research and development

    International Nuclear Information System (INIS)

    Miller, W.O.; Thompson, T.C.; Ziock, H.J.; Gamble, M.T.

    1990-12-01

    The Alamos National Laboratory Mechanical Engineering and Electronics Division has been investigating silicon-based elementary particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, materials, and thermal issues have been addressed. This paper explores detector structural integrity and stability, including detailed finite element models of the silicon wafer support and predictive methods used in designing with advanced composite materials. The current design comprises a magnesium metal matrix composite (MMC) truss space frame to provide a sparse support structure for the complex array of silicon detectors. This design satisfies the 25-μm structural stability requirement in a 10-Mrad radiation environment. This stability is achieved without exceeding the stringent particle interaction constraints set at 2.5% of a radiation length. Materials studies have considered thermal expansion, elastic modulus, resistance to radiation and chemicals, and manufacturability of numerous candidate materials. Based on optimization of these parameters, the MMC space frame will possess a coefficient of thermal expansion (CTE) near zero to avoid thermally induced distortions, whereas the cooling rings, which support the silicon detectors and heat pipe network, will probably be constructed of a graphite/epoxy composite whose CTE is engineered to match that of silicon. Results from radiation, chemical, and static loading tests are compared with analytical predictions and discussed. Electronic thermal loading and its efficient dissipation using heat pipe cooling technology are discussed. Calculations and preliminary designs for a sprayed-on graphite wick structure are presented. A hydrocarbon such as butane appears to be a superior choice of heat pipe working fluid based on cooling, handling, and safety criteria

  15. Interactions of structural defects with metallic impurities in multicrystalline silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; Thompson, A.C.; Hieslmair, H.

    1997-01-01

    Multicrystalline silicon is one of the most promising materials for terrestrial solar cells. It is critical to getter impurities from the material as well as inhibit contamination during growth and processing. Standard processing steps such as, phosphorus in-diffusion for p-n junction formation and aluminum sintering for backside ohmic contact fabrication, intrinsically possess gettering capabilities. These processes have been shown to improve L n values in regions of multicrystalline silicon with low structural defect densities but not in highly dislocated regions. Recent Deep Level Transient Spectroscopy (DLTS) results indirectly reveal higher concentrations of iron in highly dislocated regions while further work suggests that the release of impurities from structural defects, such as dislocations, is the rate limiting step for gettering in multicrystalline silicon. The work presented here directly demonstrates the relationship between metal impurities, structural defects and solar cell performance in multicrystalline silicon. Edge-defined Film-fed Growth (EFG) multicrystalline silicon in the as-grown state and after full solar cell processing was used in this study. Standard solar cell processing steps were carried out at ASE Americas Inc. Metal impurity concentrations and distributions were determined by use of the x-ray fluorescence microprobe (beamline 10.3.1) at the Advanced Light Source, Lawrence Berkeley National Laboratory. The sample was at atmosphere so only elements with Z greater than silicon could be detected, which includes all metal impurities of interest. Structural defect densities were determined by preferential etching and surface analysis using a Scanning Electron Microscope (SEM) in secondary electron mode. Mapped areas were exactly relocated between the XRF and SEM to allow for direct comparison of impurity and structural defect distributions

  16. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  17. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...

  18. Ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

    2013-12-01

    We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

  19. Vibrational modes of porous silicon

    International Nuclear Information System (INIS)

    Sabra, M.; Naddaf, M.

    2012-01-01

    On the basis of theoretical and experimental investigations, the origin of room temperature photoluminescence (PL) from porous silicon is found to related to chemical complexes constituted the surface, in particular, SiHx, SiOx and SiOH groups. Ab initio atomic and molecular electronic structure calculations on select siloxane compounds were used for imitation of infrared (IR) spectra of porous silicon. These are compared to the IR spectra of porous silicon recorded by using Fourier Transform Infrared Spectroscopy (FTIR). In contrast to linear siloxane, the suggested circular siloxane terminated with linear siloxane structure is found to well-imitate the experimental spectra. These results are augmented with EDX (energy dispersive x-ray spectroscopy) measurements, which showed that the increase of SiOx content in porous silicon due to rapid oxidation process results in considerable decrease in PL peak intensity and a blue shift in the peak position. (author)

  20. Silicon pressure transducers: a review

    International Nuclear Information System (INIS)

    Aceves M, M.; Sandoval I, F.

    1994-01-01

    We present a review of the pressure sensors, which use the silicon piezo resistive effect and micro machining technique. Typical pressure sensors, applications, design and other different structures are presented. (Author)

  1. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  2. (Preoxidation cleaning optimization for crystalline silicon)

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    A series of controlled experiments has been performed in Sandia's Photovoltaic Device Fabrication Laboratory to evaluate the effect of various chemical surface treatments on the recombination lifetime of crystalline silicon wafers subjected to a high-temperature dry oxidation. From this series of experiments we have deduced a relatively simple yet effective cleaning sequence. We have also evaluated the effect of different chemical damage-removal etches for improving the recombination lifetime and surface smoothness of mechanically lapped wafers. This paper presents the methodology used, the experimental results obtained, and our experience with using this process on a continuing basis over a period of many months. 7 refs., 4 figs., 1 tab.

  3. Bio Engineering Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — Description/History: Chemistry and biology laboratoriesThe Bio Engineering Laboratory (BeL) is theonly full spectrum biotechnology capability within the Department...

  4. FOOTWEAR PERFORMANCE LABORATORY

    Data.gov (United States)

    Federal Laboratory Consortium — This laboratory provides biomechanical and physical analyses for both military and commercial footwear. The laboratory contains equipment that is integral to the us...

  5. Nanotechnology Characterization Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Nanotechnology Characterization Laboratory (NCL) at the Frederick National Laboratory for Cancer Research performs preclinical characterization of nanomaterials...

  6. Physical Sciences Laboratory (PSL)

    Data.gov (United States)

    Federal Laboratory Consortium — PNNL's Physical Sciences Laboratory (PSL) houses 22 research laboratories for conducting a wide-range of research including catalyst formulation, chemical analysis,...

  7. Distributed Energy Technology Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Distributed Energy Technologies Laboratory (DETL) is an extension of the power electronics testing capabilities of the Photovoltaic System Evaluation Laboratory...

  8. Method of forming buried oxide layers in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  9. Surfing Silicon Nanofacets for Cold Cathode Electron Emission Sites.

    Science.gov (United States)

    Basu, Tanmoy; Kumar, Mohit; Saini, Mahesh; Ghatak, Jay; Satpati, Biswarup; Som, Tapobrata

    2017-11-08

    Point sources exhibit low threshold electron emission due to local field enhancement at the tip. In the case of silicon, however, the realization of tip emitters has been hampered by unwanted oxidation, limiting the number of emission sites and the overall current. In contrast to this, here, we report the fascinating low threshold (∼0.67 V μm -1 ) cold cathode electron emission from silicon nanofacets (Si-NFs). The ensembles of nanofacets fabricated at different time scales, under low energy ion impacts, yield tunable field emission with a Fowler-Nordheim tunneling field in the range of 0.67-4.75 V μm -1 . The local probe surface microscopy-based tunneling current mapping in conjunction with Kelvin probe force microscopy measurements revealed that the valleys and a part of the sidewalls of the nanofacets contribute more to the field emission process. The observed lowest turn-on field is attributed to the absence of native oxide on the sidewalls of the smallest facets as well as their lowest work function. In addition, first-principle density functional theory-based simulation revealed a crystal orientation-dependent work function of Si, which corroborates well with our experimental observations. The present study demonstrates a novel way to address the origin of the cold cathode electron emission sites from Si-NFs fabricated at room temperature. In principle, the present methodology can be extended to probe the cold cathode electron emission sites from any nanostructured material.

  10. Virgin Valley opal district, Humboldt County, Nevada

    Science.gov (United States)

    Staatz, Mortimer Hay; Bauer, Herman L.

    1951-01-01

    The Virgin Valley opal district, Humboldt County, Nevada, is near the Oregon-Nevada border in the Sheldon Game Refuge. Nineteen claims owned by Jack and Toni Crane were examined, sampled, and tested radiometrically for uranium. Numerous discontinuous layers of opal are interbedded with a gently-dipping series of vitric tuff and ash which is at least 300 ft thick. The tuff and ash are capped by a dark, vesicular basalt in the eastern part of the area and by a thin layer of terrace qravels in the area along the west side of Virgin Valley. Silicification of the ash and tuff has produced a rock that ranges from partly opalized rock that resembles silicified shale to completely altered rock that is entirely translucent, and consists of massive, brown and pale-green opal. Carnotite, the only identified uranium mineral, occurs as fracture coatings or fine layers in the opal; in places, no uranium minerals are visible in the radioactive opal. The opal layers are irregular in extent and thickness. The exposed length of the layers ranges from 8 to 1, 200 ft or more, and the thickness of the layers ranges from 0. 1 to 3. 9 ft. The uranium content of each opal layer, and of different parts of the same layer, differs widely. On the east side of Virgin Valley four of the seven observed opal layers, nos. 3, 4, 5, and 7, are more radioactive than the average; and the uranium content ranges from 0. 002 to 0. 12 percent. Two samples, taken 5 ft apart across opal layer no. 7, contained 0. 003 and 0. -049 percent uranium. On the west side of the valley only four of the fifteen observed opal layers, nos; 9, , 10, 14, and 15, are more radioactive than the average; and the uranium content ranges from 0. 004 to 0. 047 percent. Material of the highest grade was found in a small discontinuous layer of pale-green opal (no. 4) on the east side of Virgin Valley. The grade of this layer ranged from 0. 027 to 0. 12 percent uranium.

  11. Silicone nanocomposite coatings for fabrics

    Science.gov (United States)

    Eberts, Kenneth (Inventor); Lee, Stein S. (Inventor); Singhal, Amit (Inventor); Ou, Runqing (Inventor)

    2011-01-01

    A silicone based coating for fabrics utilizing dual nanocomposite fillers providing enhanced mechanical and thermal properties to the silicone base. The first filler includes nanoclusters of polydimethylsiloxane (PDMS) and a metal oxide and a second filler of exfoliated clay nanoparticles. The coating is particularly suitable for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts, boat sails, and inflatable shelters.

  12. Quasimetallic silicon micromachined photonic crystals

    International Nuclear Information System (INIS)

    Temelkuran, B.; Bayindir, Mehmet; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.

    2001-01-01

    We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

  13. Industrial Silicon Wafer Solar Cells

    OpenAIRE

    Neuhaus, Dirk-Holger; Münzer, Adolf

    2007-01-01

    In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future e...

  14. Silicon nanowires: structure and properties

    International Nuclear Information System (INIS)

    Nezhdanov, A.V.; Mashin, A.I.; Razuvaev, A.G.; Ershov, A.V.; Ignatov, S.K.

    2006-01-01

    An attempt to grow silicon nanowires has been made by electron beam evaporation on highly oriented pyrolytic substrate. Needle-like objects are located along the normal to a substrate (density 2 x 10 11 cm -2 ). For modeling quasi-one-dimensional objects calculations of nuclear structure and energy spectra have been accomplished. A fullerene-like structure Si 24 is proposed as a basic atomic configuration of silicon nanowires [ru

  15. Laser tests of silicon detectors

    International Nuclear Information System (INIS)

    Dolezal, Zdenek; Escobar, Carlos; Gadomski, Szymon; Garcia, Carmen; Gonzalez, Sergio; Kodys, Peter; Kubik, Petr; Lacasta, Carlos; Marti, Salvador; Mitsou, Vasiliki A.; Moorhead, Gareth F.; Phillips, Peter W.; Reznicek, Pavel; Slavik, Radan

    2007-01-01

    This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented

  16. Nitrate Contamination of Deep Aquifers in the Salinas Valley, California

    Science.gov (United States)

    Moran, J. E.; Esser, B. K.; Hillegonds, D. J.; Holtz, M.; Roberts, S. K.; Singleton, M. J.; Visser, A.; Kulongoski, J. T.; Belitz, K.

    2011-12-01

    The Salinas Valley, known as 'the salad bowl of the world', has been an agricultural center for more than 100 years. Irrigated row crops such as lettuce and strawberries dominate both land use and water use. Groundwater is the exclusive supply for both irrigation and drinking water. Some irrigation wells and most public water supply wells in the Salinas Valley are constructed to draw water from deep portions of the aquifer system, where contamination by nitrate is less likely than in the shallow portions of the aquifer system. However, a number of wells with top perforations greater than 75 m deep, screened below confining or semi-confining units, have nitrate concentrations greater than the Maximum Contaminant Limit (MCL) of 45 mg/L as NO3-. This study uses nitrate concentrations from several hundred irrigation, drinking water, and monitoring wells (Monterey County Water Resources Agency, 1997), along with tritium-helium groundwater ages acquired at Lawrence Livermore National Laboratory through the State of California Groundwater Monitoring and Assessment (GAMA) program (reported in Kulongoski et al., 2007 and in Moran et al., in press), to identify nitrate 'hot spots' in the deep aquifer and to examine possible modes of nitrate transport to the deep aquifer. In addition, observed apparent groundwater ages are compared with the results of transport simulations that use particle tracking and a stochastic-geostatistical framework to incorporate aquifer heterogeneity to determine the distribution of travel times from the water table to each well (Fogg et al., 1999). The combined evidence from nitrate, tritium, tritiogenic 3He, and radiogenic 4He concentrations, reveals complex recharge and flow to the capture zone of the deep drinking water wells. Widespread groundwater pumping for irrigation accelerates vertical groundwater flow such that high nitrate groundwater reaches some deep drinking water wells. Deeper portions of the wells often draw in water that recharged

  17. Valley and spin thermoelectric transport in ferromagnetic silicene junctions

    International Nuclear Information System (INIS)

    Ping Niu, Zhi; Dong, Shihao

    2014-01-01

    We have investigated the valley and spin resolved thermoelectric transport in a normal/ferromagnetic/normal silicene junction. Due to the coupling between the valley and spin degrees of freedom, thermally induced pure valley and spin currents can be demonstrated. The magnitude and sign of these currents can be manipulated by adjusting the ferromagnetic exchange field and local external electric field, thus the currents are controllable. We also find fully valley and/or spin polarized currents. Similar to the currents, owing to the band structure symmetry, tunable pure spin and/or valley thermopowers with zero charge counterpart are generated. The results obtained here suggest a feasible way of generating a pure valley (spin) current and thermopower in silicene

  18. Valley Hall effect and Nernst effect in strain engineered graphene

    Science.gov (United States)

    Niu, Zhi Ping; Yao, Jian-ming

    2018-04-01

    We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current. It is expected these features may be helpful in the design of the controllable valleytronic devices.

  19. Taking piezoelectric microsystems from the laboratory to production

    NARCIS (Netherlands)

    Raeder, H.; Tyholdt, F.; Booij, W.; Calame, F.; Ostbo, N.P.; Bredesen, R.; Prume, K.; Rijnders, Augustinus J.H.M.; Muralt, P.

    2007-01-01

    Reliable integration of piezoelectric thin films into silicon-based microsystems on an industrial scale is a key enabling technology for a wide range of future products. However, current knowledge in the field is mostly limited to the conditions and scale of academic laboratories. Thus, knowledge on

  20. MX Siting Investigation. Gravity Survey - Sevier Desert Valley, Utah.

    Science.gov (United States)

    1981-01-24

    Cheyenne, Wyoming. DMAHTC reduces the data to Simple Bouguer Anomaly (see Section A1.4, Appendix Al.0). The Defense Mapping Agency Aerospace Center...Desert Valley, Utah ......... 2 2 Topographic Setting - Sevier Desert Valley, Utah . 3 LIST OF DRAWINGS Drawing Number 1 Complete Bouguer Anomaly...gravity stations were distributed throughout the valley at an approxi- mate interval of 1.4 miles (2.3 km). Drawing 1 is a Complete Bouguer Anomaly

  1. Direct Production of Silicones From Sand

    Energy Technology Data Exchange (ETDEWEB)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  2. Enhanced Raman scattering in porous silicon grating.

    Science.gov (United States)

    Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

    2018-03-19

    The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

  3. Silicon materials outlook study for 1980-85 calendar years

    Energy Technology Data Exchange (ETDEWEB)

    Costogue, E.; Ferber, R.; Hasbach, W.; Pellin, R.; Yaws, C.

    1979-11-01

    Photovoltaic solar cell arrays converting solar energy into electrical energy can become a cost-effective, alternative energy source provided that an adequate supply of low-priced solar cell materials and automated fabrication techniques are available. Presently, the photovoltaic industry is dependent upon polycrystalline silicon which is produced primarily for the discrete semiconductor device industry. This dependency is expected to continue until DOE-sponsored new technology developments mature. Recent industry forecasts have predicted a limited supply of polycrystalline silicon material and a shortage could occur in the early 80's. The Jet Propulsion Laboratory's Technology Development and Application Lead Center formed an ad hoc committee at JPL, SERI and consultant personnel to conduct interviews with key polycrystalline manufacturers and a large cross-section of single crystal ingot growers and wafer manufacturers. Industry consensus and conclusions reached from the analysis of the data obtained by the committee are reported. The highlight of the study is that there is a high probability of polycrystalline silicon shortage by the end of CY 1982 and a strong seller's market after CY 1981 which will foster price competition for available silicon.

  4. 4D tracking with ultra-fast silicon detectors

    Science.gov (United States)

    F-W Sadrozinski, Hartmut; Seiden, Abraham; Cartiglia, Nicolò

    2018-02-01

    The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies to researchers in all fields of science. One archetypal example is the evolution of silicon detectors, from a system with a few channels 30 years ago, to the tens of millions of independent pixels currently used to track charged particles in all major particle physics experiments. Nowadays, silicon detectors are ubiquitous not only in research laboratories but in almost every high-tech apparatus, from portable phones to hospitals. In this contribution, we present a new direction in the evolution of silicon detectors for charge particle tracking, namely the inclusion of very accurate timing information. This enhancement of the present silicon detector paradigm is enabled by the inclusion of controlled low gain in the detector response, therefore increasing the detector output signal sufficiently to make timing measurement possible. After providing a short overview of the advantage of this new technology, we present the necessary conditions that need to be met for both sensor and readout electronics in order to achieve 4D tracking. In the last section, we present the experimental results, demonstrating the validity of our research path.

  5. Disorder-dependent valley properties in monolayer WSe2

    KAUST Repository

    Tran, Kha

    2017-07-19

    We investigate the effect of disorder on exciton valley polarization and valley coherence in monolayer WSe2. By analyzing the polarization properties of photoluminescence, the valley coherence (VC) and valley polarization (VP) are quantified across the inhomogeneously broadened exciton resonance. We find that disorder plays a critical role in the exciton VC, while affecting VP less. For different monolayer samples with disorder characterized by their Stokes shift (SS), VC decreases in samples with higher SS while VP does not follow a simple trend. These two methods consistently demonstrate that VC as defined by the degree of linearly polarized photoluminescence is more sensitive to disorder, motivating further theoretical studies.

  6. Collimation: a silicon solution

    CERN Multimedia

    2007-01-01

    Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

  7. Experimental data developed to support the selection of a treatment process for West Valley alkaline supernatant

    Energy Technology Data Exchange (ETDEWEB)

    Bray, L.A.; Holton, L.K.; Myers, T.R.; Richardson, G.M.; Wise, B.M.

    1984-01-01

    At the request of West Valley Nuclear Services Co., Inc., the Pacific Northwest Laboratory (PNL) has studied alternative treatment processes for the alkaline PUREX waste presently being stored in Tank 8D2 at West Valley, New York. Five tasks were completed during FY 1983: (1) simulation and characterization of the alkaline supernatant and sludge from the tank. The radiochemical and chemical distributions between the aqueous and solid phase were determined, and the efficiency of washing sludge with water to remove ions such as Na/sup +/ and SO/sub 4//sup 2 -/ was investigated; (2) evaluation of a sodium tetraphenylboron (Na-TPB) precipitation process to recover cesium (Cs) and a sodium titanate (Na-TiA) sorption process to recover strontium (Sr) and plutonium (Pu) from the West Valley Alkaline supernatant. These processes were previously developed and tested at the US Department of Energy's Savannah River Plant; (3) evaluation of an organic cation-exchange resin (Duolite CS-100) to recover Cs and Pu from the alkaline supernatant followed by an organic macroreticular cation exchange resin (Amberlite IRC-718) to recover Sr; (4) evaluation of an inorganic ion exchanger (Linde Ionsiv IE-95) to recover Cs, Sr, and Pu from the alkaline supernatant; and (5) evaluation of Dowex-1,X8 organic anion exchange resin to recover technetium (Tc) from alkaline supernatant. The findings of these tasks are reported. 21 references, 36 figures, 34 tables.

  8. Potential effects of geothermal energy conversion on Imperial Valley ecosystems. [Seven workshop presentations

    Energy Technology Data Exchange (ETDEWEB)

    Shinn, J.H. (ed.)

    1976-12-17

    This workshop on potential effcts of geothermal energy conversion on the ecology of Imperial Valley brought together personnel of Lawrence Livermore Laboratory and many collaborators under the sponsorship of the ERDA Imperial Valley Environmental Project (IVEP). The LLL Integrated Assessment Team identified the electric power potential and its associated effluents, discharges, subsidence, water requirements, land use, and noise. The Working Groups addressed the ecological problems. Water resource management problems include forces on water use, irrigation methods and water use for crops, water production, and water allocation. Agricultural problems are the contamination of edible crops and the reclamation of soil. A strategy is discussed for predevelopment baseline data and for identification of source term tracers. Wildlife resources might be threatened by habitat destruction, powerline impacts, noise and disturbance effects, gas emissions, and secondary impacts such as population pressure. Aquatic ecosystems in both the Salton Sea and fresh waters have potential hazards of salinity and trace metal effects, as well as existing stresses; baseline and bioassay studies are discussed. Problems from air pollution resulting from geothermal resource development might occur, particularly to vegetation and pollinator insects. Conversion of injury data to predicted economic damage isneeded. Finally, Imperial Valley desert ecosystems might be threatened by destruction of habitat and the possible effects on community structure such as those resulting from brine spills.

  9. Functions and Requirements for West Valley Demonstration Project Tank Lay-up

    International Nuclear Information System (INIS)

    Elmore, Monte R.; Henderson, Colin

    2002-01-01

    Documents completion of Milestone A.1-1, ''Issue Functions and Requirements for WVDP Tank Lay-Up,'' in Technical Task Plan TTP RL3-WT21A - ''Post-Retrieval and Pre-Closure HLW Tank Lay-Up.'' This task is a collaborative effort among Pacific Northwest National Laboratory, Jacobs Engineering Group Inc., and West Valley Nuclear Services (WVNS). Because of the site-specific nature of this task, the involvement of WVNS personnel is critical to the success of this task

  10. Analysis of the Carmel Valley alluvial ground-water basin, Monterey County, California

    Science.gov (United States)

    Kapple, Glenn W.; Mitten, Hugh T.; Durbin, Timothy J.; Johnson, Michael J.

    1984-01-01

    A two-dimensional, finite-element, digital model was developed for the Carmel Valley alluvial ground-water basin using measured, computed, and estimated discharge and recharge data for the basin. Discharge data included evapotranspiration by phreatophytes and agricultural, municipal, and domestic pumpage. Recharge data included river leakage, tributary runoff, and pumping return flow. Recharge from subsurface boundary flow and rainfall infiltration was assumed to be insignificant. From 1974 through 1978, the annual pumping rate ranged from 5,900 to 9,100 acre-feet per year with 55 percent allotted to municipal use principally exported out of the valley, 44 percent to agricultural use, and 1 percent to domestic use. The pumpage return flow within the valley ranged from 900 to 1,500 acre-feet per year. The aquifer properties of transmissivity (about 5,900 feet squared per day) and of the storage coefficient (0.19) were estimated from an average alluvial thickness of 75 feet and from less well-defined data on specific capacity and grain-size distribution. During calibration the values estimated for hydraulic conductivity and storage coefficient for the lower valley were reduced because of the smaller grain size there. The river characteristics were based on field and laboratory analyses of hydraulic conductivity and on altitude survey data. The model is intended principally for simulation of flow conditions using monthly time steps. Time variations in transmissivity and short-term, highrecharge potential are included in the model. The years 1974 through 1978 (including "pre-" and "post-" drought) were selected because of the extreme fluctuation in water levels between the low levels measured during dry years and the above-normal water levels measured during the preceding and following wet years. Also, during this time more hydrologic information was available. Significantly, computed water levels were generally within a few feet of the measured levels, and computed

  11. Achievement Report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Development of silicon mass-production manufacturing technology for solar cells; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    In order to manufacture silicon for solar cells, development is intended on a technology to manufacture silicon (SOG-Si) for solar cells by means of metallurgical methods using metallic silicon with purity generally available as an interim starting material. The silicon is required of p-type electric conductivity characteristics with specific resistance of 0.5 to 1.5 ohm per cm, to be sufficient even with 6-7N as compared to silicon for semiconductors (11-N), and to be low in cost. While the NEDO fluid bed process and the metallurgical NEDO direct reduction process have been developed based on the technology to manufacture silicon for semiconductors, the basic policy was established to develop a new manufacturing method using commercially available high-purity metallic silicon as an interim starting material, with an objective to achieve cost as low as capable of responding to small-quantity phase production for proliferation purpose. Removal of boron and phosphor has been the main issue in the development, whereas SOG-Si was manufactured in a laboratory scale by combining with the conventional component technologies in fiscal 1991 and 1992. The scale was expanded to 20 kg since fiscal 1993, and a five year plan starting fiscal 1996 was decided to develop the technology for industrial scale. Fiscal 1997 has promoted the development by using the 20-kg scale device, and introduced facilities to develop technology for mass-production scale. (NEDO)

  12. Design and test of a prototype silicon detector module for ATLAS Semiconductor Tracker endcaps

    International Nuclear Information System (INIS)

    Clark, A.G.; Donega, M.; D'Onofrio, M.

    2005-01-01

    The ATLAS Semiconductor Tracker (SCT) will be a central part of the tracking system of the ATLAS experiment. The SCT consists of four concentric barrels of silicon detectors as well as two silicon endcap detectors formed by nine disks each. The layout of the forward silicon detector module presented in this paper is based on the approved layout of the silicon detectors of the SCT, their geometry and arrangement in disks, but uses otherwise components identical to the barrel modules of the SCT. The module layout is optimized for excellent thermal management and electrical performance, while keeping the assembly simple and adequate for a large scale module production. This paper summarizes the design and layout of the module and present results of a limited prototype production, which has been extensively tested in the laboratory and testbeam. The module design was not finally adopted for series production because a dedicated forward hybrid layout was pursued

  13. Mechanical engineering and design of silicon-based particle tracking devices

    International Nuclear Information System (INIS)

    Miller, W.O.; Thompson, T.C.; Gamble, M.T.; Reid, R.S.; Woloshun, K.A.; Dransfield, G.D.; Ziock, H.J.

    1990-01-01

    The Mechanical Engineering and Electronics Division of the Los Alamos National Laboratory has been investigating silicon-based particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, thermal, and materials issues have been addressed. This paper discussed detector structural integrity and stability, including detailed finite element models of the silicon chip support and predictive methods used in designing with advanced composite materials. Electronic thermal loading and efficient dissipation of such energy using heat pipe technology has been investigated. The use of materials whose coefficients of thermal expansion are engineered to match silicon or to be near zero, as appropriate, have been explored. Material analysis and test results from radiation, chemical, and static loading are compared with analytical predictions and discussed. 1 ref., 2 figs., 1 tab

  14. Triangulating the Position of Antimony Donors Implanted in Silicon

    Science.gov (United States)

    Bureau-Oxton, Chloe; Nielsen, Erik; Luhman, Dwight; Ten Eyck, Gregory; Pluym, Tammy; Wendt, Joel; Pioro-Ladrière, Michel; Lilly, Michael; Carroll, Malcolm

    2015-03-01

    A potential candidate for a quantum bit is a single Sb atom implanted in silicon. A single-electron-transistor (SET) situated close to an Sb donor can be used to measure the occupancy and spin of the electron on the donor while the lithographically patterned poly-silicon gates defining the SET can be used to control donor occupancy. In our samples two clusters of Sb donors have been implanted adjacent to opposite sides of the SET through a self-aligned process. In this talk, we will present experimental results that allow us to determine the approximate position of different donors by determining their relative capacitance to pairs of the SET's poly-silicon gates. We will present the results of capacitive-based modeling calculations that allow us to further locate the position of the donors. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  15. Silicon solar cell - from R and D to production

    International Nuclear Information System (INIS)

    Akhter, P.

    1995-01-01

    During last 30 years tremendous research and development efforts have concluded that tech-economically silicon is the most suitable material for the manufacturing of solar cells and a number of achievements have been made in the processing of both the materials nd devices. A number of novel structure have been designed and fabricated. The crystalline silicon technology has now become mature enough and is ready to take off from R/D laboratories to large scale fabrication. At laboratory scale the performance of monocrystalline silicon cells have already reached very close to the theoretical value. However the processing cost and efficiency being complimentary, the commercial cells, as a trade off, have to compromise at rather lower efficiencies. Further efforts of lowering the processing cost of both the material and devices are in progress. At the same time attempts are being made to understand the physics of all those factors that limit the efficiency; develop the technologies to eliminate or optimize such effects to reach limiting efficiency with lowest possible cost. All such factors, along with the development will be discussed. (author)

  16. Surface slip during large Owens Valley earthquakes

    KAUST Repository

    Haddon, E. K.; Amos, C. B.; Zielke, Olaf; Jayko, A. S.; Burgmann, R.

    2016-01-01

    The 1872 Owens Valley earthquake is the third largest known historical earthquake in California. Relatively sparse field data and a complex rupture trace, however, inhibited attempts to fully resolve the slip distribution and reconcile the total moment release. We present a new, comprehensive record of surface slip based on lidar and field investigation, documenting 162 new measurements of laterally and vertically displaced landforms for 1872 and prehistoric Owens Valley earthquakes. Our lidar analysis uses a newly developed analytical tool to measure fault slip based on cross-correlation of sublinear topographic features and to produce a uniquely shaped probability density function (PDF) for each measurement. Stacking PDFs along strike to form cumulative offset probability distribution plots (COPDs) highlights common values corresponding to single and multiple-event displacements. Lateral offsets for 1872 vary systematically from approximate to 1.0 to 6.0 m and average 3.31.1 m (2 sigma). Vertical offsets are predominantly east-down between approximate to 0.1 and 2.4 m, with a mean of 0.80.5 m. The average lateral-to-vertical ratio compiled at specific sites is approximate to 6:1. Summing displacements across subparallel, overlapping rupture traces implies a maximum of 7-11 m and net average of 4.41.5 m, corresponding to a geologic M-w approximate to 7.5 for the 1872 event. We attribute progressively higher-offset lateral COPD peaks at 7.12.0 m, 12.8 +/- 1.5 m, and 16.6 +/- 1.4 m to three earlier large surface ruptures. Evaluating cumulative displacements in context with previously dated landforms in Owens Valley suggests relatively modest rates of fault slip, averaging between approximate to 0.6 and 1.6 mm/yr (1 sigma) over the late Quaternary.

  17. Surface slip during large Owens Valley earthquakes

    KAUST Repository

    Haddon, E. K.

    2016-01-10

    The 1872 Owens Valley earthquake is the third largest known historical earthquake in California. Relatively sparse field data and a complex rupture trace, however, inhibited attempts to fully resolve the slip distribution and reconcile the total moment release. We present a new, comprehensive record of surface slip based on lidar and field investigation, documenting 162 new measurements of laterally and vertically displaced landforms for 1872 and prehistoric Owens Valley earthquakes. Our lidar analysis uses a newly developed analytical tool to measure fault slip based on cross-correlation of sublinear topographic features and to produce a uniquely shaped probability density function (PDF) for each measurement. Stacking PDFs along strike to form cumulative offset probability distribution plots (COPDs) highlights common values corresponding to single and multiple-event displacements. Lateral offsets for 1872 vary systematically from approximate to 1.0 to 6.0 m and average 3.31.1 m (2 sigma). Vertical offsets are predominantly east-down between approximate to 0.1 and 2.4 m, with a mean of 0.80.5 m. The average lateral-to-vertical ratio compiled at specific sites is approximate to 6:1. Summing displacements across subparallel, overlapping rupture traces implies a maximum of 7-11 m and net average of 4.41.5 m, corresponding to a geologic M-w approximate to 7.5 for the 1872 event. We attribute progressively higher-offset lateral COPD peaks at 7.12.0 m, 12.8 +/- 1.5 m, and 16.6 +/- 1.4 m to three earlier large surface ruptures. Evaluating cumulative displacements in context with previously dated landforms in Owens Valley suggests relatively modest rates of fault slip, averaging between approximate to 0.6 and 1.6 mm/yr (1 sigma) over the late Quaternary.

  18. Engineering assessment of inactive uranium mill tailings: Monument Valley Site, Monument Valley, Arizona

    Energy Technology Data Exchange (ETDEWEB)

    1981-10-01

    Ford, Bacon and Davis Utah Inc. has reevalated the Monument Valley site in order to revise the March 1977 engineering assessment of the problems resulting from the existence of radioactive uranium mill tailings at Monument Valley, Arizona. This engineering assessment has included the preparation of topographic maps, the performance of core drillings and radiometric measurements sufficient to determine areas and volumes of tailings and radiation exposure of individuals and nearby populations, the investigations of site hydrology and meteorology, and the evaluation and costing of alternative corrective actions. Radon gas released from the 1.1 million tons of tailings at the Monument Valley site constitutes the most significant environmental impact, although windblown tailings and external gamma radiation also are factors. The four alternative actions presented in this engineering assessment range from millsite decontamination with the addition of 3 m of stabilization cover material (Option I), to removal of the tailings to remote disposal sites and decontamination of the tailings site (Options II through IV). Cost estimates for the four options range from about $6,600,000 for stabilization in-place, to about $15,900,000 for disposal at a distance of about 15 mi. Three principal alternatives for reprocessing the Monument Valley tailings were examined: heap leaching; Treatment at an existing mill; and reprocessing at a new conventional mill constructed for tailings reprocessing. The cost of the uranium recovery is economically unattractive.

  19. Engineering assessment of inactive uranium mill tailings: Monument Valley Site, Monument Valley, Arizona

    International Nuclear Information System (INIS)

    1981-10-01

    Ford, Bacon and Davis Utah Inc. has reevalated the Monument Valley site in order to revise the March 1977 engineering assessment of the problems resulting from the existence of radioactive uranium mill tailings at Monument Valley, Arizona. This engineering assessment has included the preparation of topographic maps, the performance of core drillings and radiometric measurements sufficient to determine areas and volumes of tailings and radiation exposure of individuals and nearby populations, the investigations of site hydrology and meteorology, and the evaluation and costing of alternative corrective actions. Radon gas released from the 1.1 million tons of tailings at the Monument Valley site constitutes the most significant environmental impact, although windblown tailings and external gamma radiation also are factors. The four alternative actions presented in this engineering assessment range from millsite decontamination with the addition of 3 m of stabilization cover material (Option I), to removal of the tailings to remote disposal sites and decontamination of the tailings site (Options II through IV). Cost estimates for the four options range from about $6,600,000 for stabilization in-place, to about $15,900,000 for disposal at a distance of about 15 mi. Three principal alternatives for reprocessing the Monument Valley tailings were examined: heap leaching; Treatment at an existing mill; and reprocessing at a new conventional mill constructed for tailings reprocessing. The cost of the uranium recovery is economically unattractive

  20. 78 FR 59840 - Revisions to the California State Implementation Plan, Antelope Valley Air Quality Management...

    Science.gov (United States)

    2013-09-30

    ...] Revisions to the California State Implementation Plan, Antelope Valley Air Quality Management District... of plan. * * * * * (c) * * * (428) * * * (i) * * * (B) Antelope Valley Air Quality Management...) * * * (i) * * * (B) Antelope Valley Air Quality Management District. (1) Rule 431.1, ``Sulfur Content of...

  1. 78 FR 45114 - Revisions to the California State Implementation Plan, Antelope Valley Air Quality Management...

    Science.gov (United States)

    2013-07-26

    ... the California State Implementation Plan, Antelope Valley Air Quality Management District AGENCY... the Antelope Valley Air Quality Management District (AVAQMD) portion of the California State... for the South Coast Air Quality Management District (SCAQMD). The Antelope Valley Air Pollution...

  2. The uncanny valley in games and animation

    CERN Document Server

    Tinwell, Angela

    2014-01-01

    Advances in technology have enabled animators and video game designers to design increasingly realistic, human-like characters in animation and games. Although it was intended that this increased realism would allow viewers to appreciate the emotional state of characters, research has shown that audiences often have a negative reaction as the human likeness of a character increases. This phenomenon, known as the Uncanny Valley, has become a benchmark for measuring if a character is believably realistic and authentically human like. This book is an essential guide on how to overcome the Uncanny

  3. Neuroimaging Features of San Luis Valley Syndrome

    Directory of Open Access Journals (Sweden)

    Matthew T. Whitehead

    2015-01-01

    Full Text Available A 14-month-old Hispanic female with a history of double-outlet right ventricle and developmental delay in the setting of recombinant chromosome 8 syndrome was referred for neurologic imaging. Brain MR revealed multiple abnormalities primarily affecting midline structures, including commissural dysgenesis, vermian and brainstem hypoplasia/dysplasia, an interhypothalamic adhesion, and an epidermoid between the frontal lobes that enlarged over time. Spine MR demonstrated hypoplastic C1 and C2 posterior elements, scoliosis, and a borderline low conus medullaris position. Presented herein is the first illustration of neuroimaging findings from a patient with San Luis Valley syndrome.

  4. Colloidal characterization of silicon nitride and silicon carbide

    Science.gov (United States)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  5. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

  6. A Comparison of Students' Achievement and Attitude Changes Resulting From a Laboratory and Non-Laboratory Approach to General Education Physical Science Courses.

    Science.gov (United States)

    Gunsch, Leonhardt Maurice

    Student achievement and attitude changes resulting from two different approaches to teaching of physical science were studied among 94 non-science freshmen enrolled at Valley City State College during the 1970-71 winter quarter. Thirty-four students were taught the laboratory-oriented Physical Science for Nonscience Students (PSNS) Project course…

  7. Silicon-micromachined microchannel plates

    International Nuclear Information System (INIS)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

  8. Implantation damage in silicon devices

    International Nuclear Information System (INIS)

    Nicholas, K.H.

    1977-01-01

    Ion implantation, is an attractive technique for producing doped layers in silicon devices but the implantation process involves disruption of the lattice and defects are formed, which can degrade device properties. Methods of minimizing such damage are discussed and direct comparisons made between implantation and diffusion techniques in terms of defects in the final devices and the electrical performance of the devices. Defects are produced in the silicon lattice during implantation but they are annealed to form secondary defects even at room temperature. The annealing can be at a low temperature ( 0 C) when migration of defects in silicon in generally small, or at high temperature when they can grow well beyond the implanted region. The defect structures can be complicated by impurity atoms knocked into the silicon from surface layers by the implantation. Defects can also be produced within layers on top of the silicon and these can be very important in device fabrication. In addition to affecting the electrical properties of the final device, defects produced during fabrication may influence the chemical properties of the materials. The use of these properties to improve devices are discussed as well as the degradation they can cause. (author)

  9. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-01-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart

  10. Porous silicon carbide (SIC) semiconductor device

    Science.gov (United States)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  11. Medicinal plants of Usherai valley, Dir, NWFP, Pakistan

    International Nuclear Information System (INIS)

    Hazarat, A.; Shah, J.; Ahmad, S.; Nasir, M.; Jan, A.K.; Skindar

    2010-01-01

    This research is based on the results of an ethno-botanical research conducted in Usherai Valley. The main objective was to enlist the wealth of medicinal plants. In total 50 species, belonging to 32 families of wild herbs, shrubs and trees were found to be used as medicinal plants by the inhabitants in the valley. (author)

  12. Esophageal cancer in north rift valley of western Kenya | Wakhisi ...

    African Journals Online (AJOL)

    Esophageal cancer in north rift valley of western Kenya. ... Our finding also contrast with an earlier reported study that indicated that Rift Valley is a low prevalence area for this type of cancer. The mean age ... This may lead to identification of molecular biomarkers to be used in future for the early detection of this neoplasm.

  13. 27 CFR 9.208 - Snake River Valley.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Snake River Valley. 9.208... Snake River Valley. (a) Name. The name of the viticultural area described in this section is “Snake River Valley”. For purposes of part 4 of this chapter, “Snake River Valley” is a term of viticultural...

  14. Rift Valley fever potential mosquito vectors and their infection status ...

    African Journals Online (AJOL)

    Background: Rift Valley fever (RVF) is a mosquito-borne viral zoonotic disease. Rift Valley fever virus (RVFV) has been isolated from more than 40 species of mosquitoes from eight genera. This study was conducted to determine the abundance of potential mosquito vectors and their RVFV infection status in Ngorongoro ...

  15. Nematic and Valley Ordering in Anisotropic Quantum Hall Systems

    Science.gov (United States)

    Parameswaran, S. A.; Abanin, D. A.; Kivelson, S. A.; Sondhi, S. L.

    2010-03-01

    We consider a multi-valley two dimensional electron system in the quantum Hall effect (QHE) regime. We focus on QHE states that arise due to spontaneous breaking of the valley symmetry by the Coulomb interactions. We show that the anisotropy of the Fermi surface in each valley, which is generally present in such systems, favors states where all the electrons reside in one of the valleys. In a clean system, the valley ordering occurs via a finite temperature Ising-like phase transition, which, owing to the Fermi surface anisotropy, is accompanied by the onset of nematic order. In a disordered system, domains of opposite polarization are formed, and therefore long-range valley order is destroyed, however, the resulting state is still compressible. We discuss the transport properties in ordered and disordered regimes, and point out the possible relation of our results to recent experiments in AlAs [1]. [1] Y. P. Shkolnikov, S. Misra, N. C. Bishop, E. P. De Poortere, and M. Shayegan, Observation of Quantum Hall ``Valley Skyrmions", Phys. Rev. Lett. 95, 068809 (2005)[2] D.A. Abanin, S.A. Parameswaran, S.A. Kivelson and S.L. Sondhi, Nematic and Valley Ordering in Anisotropic Quantum Hall Systems, to be published.

  16. Some Environmental Issues of Inland Valleys: A Case Study | Asiam ...

    African Journals Online (AJOL)

    The study concluded that inland valleys can be real environmental liability because produce from such valleys can be polluted and hence can be a source of social conflict particularly when they fringe mineral concessions as the adverse impacts could be unfortunately attributed to mining activity and similar land uses.

  17. West Valley Reprocessing Plant. Safety analysis plant, supplement 18

    International Nuclear Information System (INIS)

    1975-01-01

    Supplement 18 contains the following additions to Appendix II--5.0 Geology and Seismology: Section 12 ''Seismic Investigations for Spent Fuel Reprocessing Facility at West Valley, New York,'' October 20, 1975, and Section 13 ''Earthquake Return Period Analysis at West Valley, New York, for Nuclear Fuel Services, Inc.'' November 5, 1975

  18. Salts in the dry valleys of Antartica

    Science.gov (United States)

    Gibson, E. K., Jr.; Presley, B. J.; Hatfield, J.

    1984-01-01

    The Dry Valleys of Antarctica are examples of polar deserts which are rare geological features on the Earth. Such deserts typically have high salinities associated with their closed-basin waters and on many surficial materials throughout them. In order to examine the possible sources for the salts observed in association with the soils in the Dry Valleys. The chloride and bromide concentrations of the water leachates from 58 soils and core samples were measured. The Cl/Br ratio for seawater is 289 and ratios measured for most of the 58 soils studied (greater than 85% of the soils studied) was larger than the seawater ratio (ratios typically were greater than 1000 and ranged up to 50,000). The enrichment in Cl relative to Br is strong evidence that the alts present within the soils were derived from seawater during ordinary evaporation processes, and not from the deposition of Cl and Br from aerosols or from rock weathering as has often been suggested.

  19. West Valley waste removal system study

    International Nuclear Information System (INIS)

    Janicek, G.P.

    1981-04-01

    This study addresses the specific task of removing high-level wastes from underground tanks at Western New York Nuclear Center and delivering them to an onsite waste solidification plant. It begins with a review of the design and construction features of the waste storage tanks pertinent to the waste removal task with particular emphasis on the unique and complex tank internals which severely complicate the task of removal. It follows with a review of tank cleaning techniques used and under study at both Hanford and Savannah River and previous studies proposing the use of these techniques at West Valley. It concludes from these reviews that existing techniques are not directly transferable to West Valley and that a new approach is required utilizing selected feature and attributes from existing methodology. The study also concludes, from an investigation of the constraints imposed by the processing facility, that waste removal will be intermittent, requiring batch transfer over the anticipated 3 years of processing operations. Based on these reviews and conclusions, the study proposes that the acid waste be processed first and that one of the 15,000-gallon acid tanks then be used for batch feeding the neutralized waste. The proposed system would employ commercially available pumping equipment to transfer the wastes from the batch tank to processing via existing process piping. A commercially available mixed-flow pump and eight turbine pumps would homogenize the neutralized waste in conjunction with eight custom-fabricated sluicers for periodic transfer to the batch tank

  20. Hoopa Valley Small Scale Hydroelectric Feasibility Project

    Energy Technology Data Exchange (ETDEWEB)

    Curtis Miller

    2009-03-22

    This study considered assessing the feasibility of developing small scale hydro-electric power from seven major tributaries within the Hoopa Valley Indian Reservation of Northern California (http://www.hoopa-nsn.gov/). This study pursued the assessment of seven major tributaries of the Reservation that flow into the Trinity River. The feasibility of hydropower on the Hoopa Valley Indian Reservation has real potential for development and many alternative options for project locations, designs, operations and financing. In order to realize this opportunity further will require at least 2-3 years of intense data collection focusing on stream flow measurements at multiple locations in order to quantify real power potential. This also includes on the ground stream gradient surveys, road access planning and grid connectivity to PG&E for sale of electricity. Imperative to this effort is the need for negotiations between the Hoopa Tribal Council and PG&E to take place in order to finalize the power rate the Tribe will receive through any wholesale agreement that utilizes the alternative energy generated on the Reservation.

  1. The LHCb Silicon Tracker Project

    International Nuclear Information System (INIS)

    Agari, M.; Bauer, C.; Baumeister, D.; Blouw, J.; Hofmann, W.; Knoepfle, K.T.; Loechner, S.; Schmelling, M.; Pugatch, V.; Bay, A.; Carron, B.; Frei, R.; Jiminez-Otero, S.; Tran, M.-T.; Voss, H.; Adeva, B.; Esperante, D.; Lois, C.; Vasquez, P.; Bernhard, R.P.; Bernet, R.; Ermoline, Y.; Gassner, J.; Koestner, S.; Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D.

    2006-01-01

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry

  2. A silicon tracker for Christmas

    CERN Multimedia

    2008-01-01

    The CMS experiment installed the world’s largest silicon tracker just before Christmas. Marcello Mannelli: physicist and deputy CMS project leader, and Alan Honma, physicist, compare two generations of tracker: OPAL for the LEP (at the front) and CMS for the LHC (behind). There is quite a difference between 1m2 and 205m2.. CMS received an early Christmas present on 18 December when the silicon tracker was installed in the heart of the CMS magnet. The CMS tracker team couldn’t have hoped for a better present. Carefully wrapped in shiny plastic, the world’s largest silicon tracker arrived at Cessy ready for installation inside the CMS magnet on 18 December. This rounded off the year for CMS with a major event, the crowning touch to ten years of work on the project by over five hundred scientists and engineers. "Building a scientific instrument of this size and complexity is a huge technical a...

  3. Belle II silicon vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

    2016-09-21

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

  4. The CMS silicon strip tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Bartalini, P.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Raffaelli, F.; Raso, G.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Wang, Y.; Watts, S.; Wittmer, B.

    1999-01-01

    The Silicon Strip Tracker (SST) is the intermediate part of the CMS Central Tracker System. SST is based on microstrip silicon devices and in combination with pixel detectors and the Microstrip Gas Chambers aims at performing pattern recognition, track reconstruction and momentum measurements for all tracks with p T ≥2 GeV/c originating from high luminosity interactions at √s=14 TeV at LHC. We aim at exploiting the advantages and the physics potential of the precise tracking performance provided by the microstrip silicon detectors on a large scale apparatus and in a much more difficult environment than ever. In this paper we describe the actual SST layout and the readout system. (author)

  5. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  6. The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching

    International Nuclear Information System (INIS)

    Timokhov, D. F.; Timokhov, F. P.

    2009-01-01

    Possible ways for increasing the photoluminescence quantum yield of porous silicon layers have been investigated. The effect of the anodization parameters on the photoluminescence properties for porous silicon layers formed on silicon substrates with different crystallographic orientations was studied. The average diameters for silicon nanoclusters are calculated from the photoluminescence spectra of porous silicon. The influence of the substrate crystallographic orientation on the photoluminescence quantum yield of porous silicon is revealed. A model explaining the effect of the substrate orientation on the photoluminescence properties for the porous silicon layers formed by anode electrochemical etching is proposed.

  7. Radon emanation of heterogeneous basin deposits in Kathmandu Valley, Nepal

    Science.gov (United States)

    Girault, Frédéric; Gajurel, Ananta Prasad; Perrier, Frédéric; Upreti, Bishal Nath; Richon, Patrick

    2011-01-01

    Effective radium-226 concentration ( EC Ra) has been measured in soil samples from seven horizontal and vertical profiles of terrace scarps in the northern part of Kathmandu Valley, Nepal. The samples belong to the Thimi, Gokarna, and Tokha Formations, dated from 50 to 14 ky BP, and represent a diverse fluvio-deltaic sedimentary facies mainly consisting of gravelly to coarse sands, black, orange and brown clays. EC Ra was measured in the laboratory by radon-222 emanation. The samples ( n = 177) are placed in air-tight glass containers, from which, after an accumulation time varying from 3 to 18 days, the concentration of radon-222, radioactive decay product of radium-226 and radioactive gas with a half-life of 3.8 days, is measured using scintillation flasks. The EC Ra values from the seven different profiles of the terrace deposits vary from 0.4 to 43 Bq kg -1, with profile averages ranging from 12 ± 1 to 27 ± 2 Bq kg -1. The values have a remarkable consistency along a particular horizon of sediment layers, clearly demonstrating that these values can be used for long distance correlations of the sediment horizons. Widely separated sediment profiles, representing similar stratigraphic positions, exhibit consistent EC Ra values in corresponding stratigraphic sediment layers. EC Ra measurements therefore appear particularly useful for lithologic and stratigraphic discriminations. For comparison, EC Ra values of soils from different localities having various sources of origin were also obtained: 9.2 ± 0.4 Bq kg -1 in soils of Syabru-Bensi (Central Nepal), 23 ± 1 Bq kg -1 in red residual soils of the Bhattar-Trisuli Bazar terrace (North of Kathmandu), 17.1 ± 0.3 Bq kg -1 in red residual soils of terrace of Kalikasthan (North of Trisuli Bazar) and 10 ± 1 Bq kg -1 in red residual soils of a site near Nagarkot (East of Kathmandu). The knowledge of EC Ra values for these various soils is important for modelling radon exhalation at the ground surface, in particular

  8. Radon emanation of heterogeneous basin deposits in Kathmandu Valley, Nepal

    International Nuclear Information System (INIS)

    Girault, F.; Perrier, F.; Ananta Prasad Gajurel; Bishal Nath Upreti; Richon, P.

    2011-01-01

    Effective radium-226 concentration (EC Ra ) has been measured in soil samples from seven horizontal and vertical profiles of terrace scarps in the northern part of Kathmandu Valley, Nepal. The samples belong to the Thimi, Gokarna, and Tokha Formations, dated from 50 to 14 ky BP, and represent a diverse fluvio-deltaic sedimentary facies mainly consisting of gravelly to coarse sands, black, orange and brown clays. EC Ra was measured in the laboratory by radon-222 emanation. The samples (n = 177) are placed in airtight glass containers, from which, after an accumulation time varying from 3 to 18 days, the concentration of radon-222, radioactive decay product of radium-226 and radioactive gas with a half-life of 3.8 days, is measured using scintillation flasks. The EC Ra values from the seven different profiles of the terrace deposits vary from 0.4 to 43 Bq kg -1 , with profile averages ranging from 12 ± 1 to 27 ± 2 Bq kg -1 . The values have a remarkable consistency along a particular horizon of sediment layers, clearly demonstrating that these values can be used for long distance correlations of the sediment horizons. Widely separated sediment profiles, representing similar stratigraphic positions, exhibit consistent EC Ra values in corresponding stratigraphic sediment layers. EC Ra measurements therefore appear particularly useful for lithologic and stratigraphic discriminations. For comparison, EC Ra values of soils from different localities having various sources of origin were also obtained: 9.2 ± 0.4 Bq kg -1 in soils of Syabru-Bensi (Central Nepal), 23 ± 1 Bq kg -1 in red residual soils of the Bhattar-Trisuli Bazar terrace (North of Kathmandu), 17.1 ± 0.3 Bq kg -1 in red residual soils of terrace of Kalikasthan (North of Trisuli Bazar) and 10 ± 1 Bq kg -1 in red residual soils of a site near Nagarkot (East of Kathmandu). The knowledge of EC Ra values for these various soils is important for modelling radon exhalation at the ground surface, in particular

  9. Surface Effects in Segmented Silicon Sensors

    OpenAIRE

    Kopsalis, Ioannis

    2017-01-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

  10. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  11. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  12. Silicon photonics for multicore fiber communication

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices.......We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

  13. Simulation of atomistic processes during silicon oxidation

    OpenAIRE

    Bongiorno, Angelo

    2003-01-01

    Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 interface is of significant importance in state-of-the-art silicon microelectronics manufacturing. These two topics are intimately coupled and are both addressed in this theoretical investigation mainly through first-principles calculations....

  14. Thermophysical spectroscopy of defect states in silicon

    International Nuclear Information System (INIS)

    Igamberdyev, Kh.T.; Mamadalimov, A.T.; Khabibullaev, P.K.

    1989-01-01

    The present work deals with analyzing the possibilities of using the non-traditional thermophysical methods to study a defect structure in silicon. For this purpose, the temperature dependences of thermophysical properties of defect silicon are investigated. A number of new, earlier unknown physical phenomena in silicon are obtained, and their interpretation has enabled one to establish the main physical mechanisms of formation of deep defect states in silicon

  15. Laser wafering for silicon solar

    International Nuclear Information System (INIS)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-01-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  16. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  17. Silicon quantum dots with counted antimony donor implants

    Science.gov (United States)

    Singh, Meenakshi; Pacheco, Jose; Perry, Daniel; Wendt, Joel; Manginell, Ronald; Dominguez, Jason; Pluym, Tammy; Luhman, Dwight; Bielejec, Edward; Lilly, Michael; Carroll, Malcolm

    Antimony donor implants next to silicon quantum dots have been detected with integrated solid-state diode detectors with single ion precision. Devices with counted number of donors have been fabricated and low temperature transport measurements have been performed. Charge offsets, indicative of donor ionization and coupling to the quantum dot, have been detected in these devices. The number of offsets corresponds to 10-50% of the number of donors counted. We will report on tunneling time measurements and spin readout measurements on the donor offsets. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  18. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  19. Four newly recorded species of Dryopteridaceae from Kashmir valley, India

    Directory of Open Access Journals (Sweden)

    SHAKOOR AHMAD MIR

    2014-04-01

    Full Text Available Mir SA, Mishra AK, Reshi ZA, Sharma MP. 2014. Four newly recorded species of Dryopteridaceae from Kashmir valley, India. Biodiversitas 15: 6-11. Habitat diversity, elevation, cloud cover, rainfall, seasonal and temperature variations have created many ideal sites for the luxuriant growth of pteridophytes in the Kashmir valley, yet all the regions of the valley have not been surveyed. In Kashmir valley the family Dryopteridaceae is represented by 31 species. During the recent extensive field surveys of Shopian district four more species viz., Dryopteris caroli-hopei Fraser-Jenkins, Dryopteris blanfordii subsp. nigrosquamosa (Ching Fraser-Jenkins, Dryopteris pulvinulifera (Bedd. Kuntze and Polystichum Nepalense (Spreng C. Chr. have been recorded for the first time from the valley. The taxonomic description, synonyms, distribution and photographs of each species are given in this article.

  20. The quasi-steady state of the valley wind system

    Directory of Open Access Journals (Sweden)

    Juerg eSchmidli

    2015-12-01

    Full Text Available The quasi-steady-state limit of the diurnal valley wind system is investigated overidealized three-dimensional topography. Although this limit is rarely attained inreality due to ever-changing forcings, the investigation of this limit canprovide valuable insight, in particular on the mass and heat fluxes associatedwith the along-valley wind. We derive a scaling relation for the quasi-steady-state along-valleymass flux as a function of valley geometry, valley size, atmospheric stratification,and surface sensible heat flux forcing. The scaling relation is tested by comparisonwith the mass flux diagnosed from numerical simulations of the valleywind system. Good agreement is found. The results also provide insight into the relationbetween surface friction and the strength of the along-valley pressure gradient.

  1. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  2. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

    2010-01-01

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  3. Large volume cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Braggio, C.; Boscardin, M.; Bressi, G.; Carugno, G.; Corti, D.; Galeazzi, G.; Zorzi, N.

    2009-01-01

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm 3 , cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  4. Large volume cryogenic silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy); Bressi, G. [INFN sez. di Pavia, via Bassi 6, 27100 Pavia (Italy); Carugno, G.; Corti, D. [INFN sez. di Padova, via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [INFN lab. naz. Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy)

    2009-12-15

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm{sup 3}, cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  5. Production of silicon carbide bodies

    International Nuclear Information System (INIS)

    Parkinson, K.

    1981-01-01

    A body consisting essentially of a coherent mixture of silicon carbide and carbon for subsequent siliconising is produced by casting a slip comprising silicon carbide and carbon powders in a porous mould. Part of the surface of the body, particularly internal features, is formed by providing within the mould a core of a material which retains its shape while casting is in progress but is compressed by shrinkage of the cast body as it dries and is thereafter removable from the cast body. Materials which are suitable for the core are expanded polystyrene and gelatinous products of selected low elastic modulus. (author)

  6. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  7. Radiation damage in silicon detectors

    CERN Document Server

    Lindström, G

    2003-01-01

    Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

  8. High yield silicon carbide prepolymers

    International Nuclear Information System (INIS)

    Baney, R.H.

    1982-01-01

    Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

  9. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  10. Silicon Alloying On Aluminium Based Alloy Surface

    International Nuclear Information System (INIS)

    Suryanto

    2002-01-01

    Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

  11. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans

    2002-01-01

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  12. Engineering piezoresistivity using biaxially strained silicon

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads

    2008-01-01

    of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity...

  13. Process Research on Polycrystalline Silicon Material (PROPSM)

    Science.gov (United States)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  14. ePIXfab - The silicon photonics platform

    NARCIS (Netherlands)

    Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-01-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

  15. Silicon-Based Nanoscale Composite Energetic Materials

    Science.gov (United States)

    2013-02-01

    1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

  16. Process of preparing tritiated porous silicon

    Science.gov (United States)

    Tam, Shiu-Wing

    1997-01-01

    A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

  17. Porous silicon: X-rays sensitivity

    International Nuclear Information System (INIS)

    Gerstenmayer, J.L.; Vibert, Patrick; Mercier, Patrick; Rayer, Claude; Hyvernage, Michel; Herino, Roland; Bsiesy, Ahmad

    1994-01-01

    We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)? ((orig.))

  18. Formation and photoluminescence of "Cauliflower" silicon nanoparticles

    NARCIS (Netherlands)

    Tang, W.; Eilers, J.J.; Huis, van M.A.; Wang, D.; Schropp, R.E.I.; Vece, Di M.

    2015-01-01

    The technological advantages of silicon make silicon nanoparticles, which can be used as quantum dots in a tandem configuration, highly relevant for photovoltaics. However, producing a silicon quantum dot solar cell structure remains a challenge. Here we use a gas aggregation cluster source to

  19. Silicon vertex detector for superheavy elements identification

    Directory of Open Access Journals (Sweden)

    Bednarek A.

    2012-07-01

    Full Text Available Silicon vertex detector for superheavy elements (SHE identification has been proposed. It will be constructed using very thin silicon detectors about 5 μm thickness. Results of test of 7.3 μm four inch silicon strip detector (SSD with fission fragments and α particles emitted by 252Cf source are presented

  20. Time-resolved X-ray absorption spectroscopy for laser-ablated silicon particles in xenon gas

    International Nuclear Information System (INIS)

    Makimura, Tetsuya; Sakuramoto, Tamaki; Murakami, Kouichi

    1996-01-01

    We developed a laboratory-scale in situ apparatus for soft X-ray absorption spectroscopy with a time resolution of 10 ns and a space resolution of 100 μm. Utilizing this spectrometer, we have investigated the dynamics of silicon atoms formed by laser ablation in xenon gas. It was found that 4d-electrons in the xenon atoms are excited through collision with electrons in the laser-generated silicon plasma. (author)

  1. Miniaturized flow cytometer with 3D hydrodynamic particle focusing and integrated optical elements applying silicon photodiodes

    NARCIS (Netherlands)

    Rosenauer, M.; Buchegger, W.; Finoulst, I.; Verhaert, P.D.E.M.; Vellekoop, M.

    2010-01-01

    In this study, the design, realization and measurement results of a novel optofluidic system capable of performing absorbance-based flow cytometric analysis is presented. This miniaturized laboratory platform, fabricated using SU-8 on a silicon substrate, comprises integrated polymer-based

  2. Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors

    International Nuclear Information System (INIS)

    Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Rachevskaia, I.; Zen, M.; Zorzi, N.

    2001-01-01

    We report on the development of a fabrication technology for double-sided, AC-coupled silicon microstrip detectors for tracking applications. Two batches of detectors with good electrical figures and a low defect rate were successfully manufactured at IRST Laboratory. The processing techniques and the experimental results obtained from these detector prototypes are presented and discussed

  3. effect of light intensity on the performance of silicon solar cell

    African Journals Online (AJOL)

    (Received 31 January 2017; Revision Accepted 7 April 2017). ABSTRACT. This work, presents the intense light effect on electrical parameters of silicon solar such as short circuit current, open circuit voltage, series and shunt ... level, which is a source of carrier photogeneration,. 123. Martial Zoungrana, Laboratory of ...

  4. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Unknown

    carbide ceramics. A K MUKHOPADHYAY. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz.

  5. Ordered silicon nanostructures for silicon-based photonics devices

    Czech Academy of Sciences Publication Activity Database

    Fojtík, A.; Valenta, J.; Pelant, Ivan; Kálal, M.; Fiala, P.

    2007-01-01

    Roč. 5, Suppl. (2007), S250-S253 ISSN 1671-7694 R&D Projects: GA AV ČR IAA1010316 Grant - others:GA MŠk(CZ) ME 933 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystals * silicon * self-assembled monolayers Subject RIV: BM - Solid Matter Physics ; Magnetism

  6. Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

    2001-01-01

    The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

  7. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  8. Development of a Test System for the Quality Assurance of Silicon Microstrip Detectors for the Inner Tracking System of the CMS Experiment

    CERN Document Server

    Axer, Markus

    2003-01-01

    The inner tracking system of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC) which is being built at the European Laboratory for Particle Physics CERN (Geneva, Switzerland) will be equipped with two different technologies of silicon detectors. While the innermost tracker will be composed of silicon pixel detectors, silicon microstrip detectors are envisaged for the outer tracker architecture. The silicon microstrip tracker will house about 15,000 single detector modules each composed of a set of silicon sensors, the readout electronics (front end hybrid), and a support frame. It will provide a total active area of 198 m2 and ten million analogue channels read out at the collider frequency of 40 MHz. This large number of modules to be produced and integrated into the tracking system is an unprecedented challenge involving industrial companies and various research institutes from many different countries. This thesis deals with the physics of silicon sensors and the preparation of ...

  9. Water resources of Parowan Valley, Iron County, Utah

    Science.gov (United States)

    Marston, Thomas M.

    2017-08-29

    Parowan Valley, in Iron County, Utah, covers about 160 square miles west of the Red Cliffs and includes the towns of Parowan, Paragonah, and Summit. The valley is a structural depression formed by northwest-trending faults and is, essentially, a closed surface-water basin although a small part of the valley at the southwestern end drains into the adjacent Cedar Valley. Groundwater occurs in and has been developed mainly from the unconsolidated basin-fill aquifer. Long-term downward trends in groundwater levels have been documented by the U.S. Geological Survey (USGS) since the mid-1950s. The water resources of Parowan Valley were assessed during 2012 to 2014 with an emphasis on refining the understanding of the groundwater and surface-water systems and updating the groundwater budget.Surface-water discharge of five perennial mountain streams that enter Parowan Valley was measured from 2013 to 2014. The total annual surface-water discharge of the five streams during 2013 to 2014 was about 18,000 acre-feet (acre-ft) compared to the average annual streamflow of about 22,000 acre-ft from USGS streamgages operated on the three largest of these streams from the 1940s to the 1980s. The largest stream, Parowan Creek, contributes more than 50 percent of the annual surface-water discharge to the valley, with smaller amounts contributed by Red, Summit, Little, and Cottonwood Creeks.Average annual recharge to the Parowan Valley groundwater system was estimated to be about 25,000 acre-ft from 1994 to 2013. Nearly all recharge occurs as direct infiltration of snowmelt and rainfall on the Markagunt Plateau east of the valley. Smaller amounts of recharge occur as infiltration of streamflow and unconsumed irrigation water near the east side of the valley on alluvial fans associated with mountain streams at the foot of the Red Cliffs. Subsurface flow from the mountain block to the east of the valley is a significant source of groundwater recharge to the basin-fill aquifer

  10. Surface slip during large Owens Valley earthquakes

    Science.gov (United States)

    Haddon, E.K.; Amos, C.B.; Zielke, O.; Jayko, Angela S.; Burgmann, R.

    2016-01-01

    The 1872 Owens Valley earthquake is the third largest known historical earthquake in California. Relatively sparse field data and a complex rupture trace, however, inhibited attempts to fully resolve the slip distribution and reconcile the total moment release. We present a new, comprehensive record of surface slip based on lidar and field investigation, documenting 162 new measurements of laterally and vertically displaced landforms for 1872 and prehistoric Owens Valley earthquakes. Our lidar analysis uses a newly developed analytical tool to measure fault slip based on cross-correlation of sublinear topographic features and to produce a uniquely shaped probability density function (PDF) for each measurement. Stacking PDFs along strike to form cumulative offset probability distribution plots (COPDs) highlights common values corresponding to single and multiple-event displacements. Lateral offsets for 1872 vary systematically from ∼1.0 to 6.0 m and average 3.3 ± 1.1 m (2σ). Vertical offsets are predominantly east-down between ∼0.1 and 2.4 m, with a mean of 0.8 ± 0.5 m. The average lateral-to-vertical ratio compiled at specific sites is ∼6:1. Summing displacements across subparallel, overlapping rupture traces implies a maximum of 7–11 m and net average of 4.4 ± 1.5 m, corresponding to a geologic Mw ∼7.5 for the 1872 event. We attribute progressively higher-offset lateral COPD peaks at 7.1 ± 2.0 m, 12.8 ± 1.5 m, and 16.6 ± 1.4 m to three earlier large surface ruptures. Evaluating cumulative displacements in context with previously dated landforms in Owens Valley suggests relatively modest rates of fault slip, averaging between ∼0.6 and 1.6 mm/yr (1σ) over the late Quaternary.

  11. Advanced Chemistry Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — Description/History: Chemistry laboratoryThe Advanced Chemistry Laboratory (ACL) is a unique facility designed for working with the most super toxic compounds known...

  12. Lincoln Laboratory Grid

    Data.gov (United States)

    Federal Laboratory Consortium — The Lincoln Laboratory Grid (LLGrid) is an interactive, on-demand parallel computing system that uses a large computing cluster to enable Laboratory researchers to...

  13. Gun Dynamics Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Gun Dynamics Laboratory is a research multi-task facility, which includes two firing bays, a high bay area and a second floor laboratory space. The high bay area...

  14. NASA Space Radiation Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The NASA Space Radiation Laboratory (NSRL) at Brookhaven National Laboratory is a NASA funded facility, delivering heavy ion beams to a target area where scientists...

  15. Denver District Laboratory (DEN)

    Data.gov (United States)

    Federal Laboratory Consortium — Program CapabilitiesDEN-DO Laboratory is a multi-functional laboratory capable of analyzing most chemical analytes and pathogenic/non-pathogenic microorganisms found...

  16. The carbon stable isotope biogeochemistry of streams, Taylor Valley, Antarctica

    International Nuclear Information System (INIS)

    Lyons, W.B.; Leslie, D.L.; Harmon, R.S.; Neumann, K.; Welch, K.A.; Bisson, K.M.; McKnight, D.M.

    2013-01-01

    Highlights: ► δ 13 C-DIC reported from McMurdo Dry Valleys, Antarctica, streams. ► Stream water δ 13 C PDB values range −9.4‰ to +5.1‰, largely inorganic in character. ► Atmospheric exchange is the dominant control on δ 13 C-DIC. - Abstract: The McMurdo Dry Valleys region of Antarctica is the largest ice-free region on the continent. This study reports the first C stable isotope measurements for dissolved inorganic C present in ephemeral streams in four dry valleys that flow for four to twelve weeks during the austral summer. One of these valleys, Taylor Valley, has been the focus of the McMurdo Dry Valleys Long-Term Ecological Research (MCM-LTER) program since 1993. Within Taylor Valley, numerous ephemeral streams deliver water to three perennially ice-covered, closed-basin lakes: Lake Fryxell, Lake Hoare, and Lake Bonney. The Onyx River in the Wright Valley, the longest river in Antarctica, flows for 40 km from the Wright Lower Glacier and Lake Brownworth at the foot of the glacier to Lake Vanda. Streamflow in the McMurdo Dry Valley streams is produced primarily from glacial melt, as there is no overland flow. However, hyporheic zone exchange can be a major hydrogeochemical process in these streams. Depending on landscape position, these streams vary in gradient, channel substrate, biomass abundance, and hyporheic zone extent. This study sampled streams from Taylor, Wright, Garwood, and Miers Valleys and conducted diurnal sampling of two streams of different character in Taylor Valley. In addition, transect sampling was undertaken of the Onyx River in Wright Valley. The δ 13 C PDB values from these streams span a range of greater than 14‰, from −9.4‰ to +5.1‰, with the majority of samples falling between −3‰ and +2‰, suggesting that the C stable isotope composition of dissolved C in McMurdo Dry Valley streams is largely inorganic in character. Because there are no vascular plants on this landscape and no groundwater input to these

  17. Environmental monitoring at the Lawrence Livermore Laboratory. 1979 Annual report

    International Nuclear Information System (INIS)

    Anon.

    1980-01-01

    In 1979, the annual average airborne gross beta activity in Livermore Valley air samples was 2.6 x 10 -14 μCi/ml, or less than half the average observed in 1978. There were no atmospheric nuclear shots in 1979; therefore, fission products seen in the January air filters are probably a result of residual activity from the December 14, 1978 nuclear test in China. Airborne 238 U concentrations at Site 300 were higher than those at Livermore because of the depleted uranium used in high-explosive tests at the Site. However, these concentrations were well below the standards set by DOE. The average annual beryllium concentrations were less than 1% of the appropriate standard at both the Laboratory perimeter and Site 300. Water samples collected in the Livermore Valley and at Site 300 exhibit gross beta and tritium activities within the ranges previously observed in these areas. Tritium analyses were made on well-water-samples collected near the Livermore Water Reclamation Plant (LWRP). As was found during the 1977 and 1978 surveys, the highest tritium values were detected in wells west of the plant near Arroyo Las Positas; however all concentrations were well below the standards set by DOE. As a means of evaluating the possible impact of Laboratory effluents on locally grown foodstuff, the tritium content of Livermore Valley wines was compared with values from other California and European wines. The tritium levels in Livermore Valley wines were found to be within the range in both European wines and surface waters throughout the world and somewhat higher than those in California wines. Assessments of the calculated radiation dose to an individual from the environmental concentrations listed demonstrates that the dose contribution from Laboratory operations in 1979 was small compared with the dose received locally from natural sources

  18. Laboratory-acquired brucellosis

    DEFF Research Database (Denmark)

    Fabiansen, C.; Knudsen, J.D.; Lebech, A.M.

    2008-01-01

    Brucellosis is a rare disease in Denmark. We describe one case of laboratory-acquired brucellosis from an index patient to a laboratory technician following exposure to an infected blood culture in a clinical microbiology laboratory Udgivelsesdato: 2008/6/9......Brucellosis is a rare disease in Denmark. We describe one case of laboratory-acquired brucellosis from an index patient to a laboratory technician following exposure to an infected blood culture in a clinical microbiology laboratory Udgivelsesdato: 2008/6/9...

  19. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  20. Diamond deposition on siliconized stainless steel

    International Nuclear Information System (INIS)

    Alvarez, F.; Reinoso, M.; Huck, H.; Rosenbusch, M.

    2010-01-01

    Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp 2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.