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Sample records for silicon taiyo denchi

  1. Solar cell. Taiyo denchi

    Energy Technology Data Exchange (ETDEWEB)

    Kamihara, T; Kondo, S; Mori, K [Matsushita Electric Industrial Co. Ltd., Osaka (Japan)

    1990-10-23

    This invention provides a solar cell having high resistance to strong incident light and high temperature preservability. Reason of performance degradation of the solar cell in high temperature atmosphere thermally diffuses at the boundary surface of the silicon with metal particles. The method of blocking this thermal diffusion is that the film thickness is of the level that the electrons can pass through the film by a quantum dynamical tunnel effect. In this invention, the construction is that a transparent substrate, a transparent electrode, a P-type amorphous silicon, an I-type amorphous silicon, silica and a collector electrode are sequentially laminated and receives the incident light, thus generating a voltage between the two electrodes. Thickness of silica film is 10-100 microns. Materials of the collector electrode are either single element or alloys of Cs, K, Na, Li, Ba, Mg, Cd, Ta, Al, Mo, Zr, Co, Fe, Cu, Ag, W, Cr, Au and Ni. 13 figs., 1 tab.

  2. Solar cell. Taiyo denchi

    Energy Technology Data Exchange (ETDEWEB)

    Amemiya, S.; Hashimoto, Y. (Canon Inc., Tokyo (Japan))

    1991-05-17

    This invention provides a cheap solar cell having a transparent surface protective layer which satisfies both controversial properties such as high electroconductivity and high water repellency and also abated the reduction of photoelectric conversion. In other words, this invention provides a solar cell having a surface-protective layer prepared by lamination of a mixture of a transparent water-repelling resin and a transparent electroconductive oxide powder; said protective layer is grounded at the surface resistance of 1 {times} 10 {sup 10} ohm or less and the contact angle of water on said protective layer is 90 degrees or more. The transparent water-repelling resin used is a fliorine resin such as PTFE and a silicone resin such as organopolysiloxane. The transparent electrodonductive oxide powder used is tin oxide, indium oxide or a complex compound of ton oxide and antimony oxide. The solar cell of this invention can be used for a long time because the adhesion of the dusts and the contamination by dirty water are restricted. 1 fig., 1 tab.

  3. Technological development for super-high efficiency solar cells. Technological development for super-high efficiency singlecrystalline silicon solar cells (super-high efficiency singlecrystalline Si solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Chokokoritsu tankessho silicon taiyo denchi no gijutsu kaihatsu (chokokoritsu tankessho silicon taiyo denchi cell no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development of super-high efficiency singlecrystalline silicon solar cells in fiscal 1994. (1) On development of high-performance light receiving layer, the fine electrode for receiving surfaces was designed to reduce serial resistance, and the high-quality oxide passivation film was studied to reduce surface recombination velocity. (2) On development of forming technology of back heterojunction, the high-quality cell with B-doped fine crystalline Si film on its back was studied by heat treatment of the fine crystalline Si film, and the cell structure with high back reflectance of light was also studied. (3) On analysis for high-efficiency cells, the relation between the back recombination velocity at the interface between p-type substrate and back passivation film, and the internal collection efficiency as probe light was injected from the back, was calculated by numerical simulation. As a result, the cell back recombination velocity could be evaluated by measuring the spectral internal collection efficiency to back injection. 15 figs., 6 tabs.

  4. Technological development for super-high efficiency solar cells. Technological development of solar-high efficiency singlecrystalline silicon solar cells (high quality singlecrystalline silicon substrates); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Chokokoritsu tankessho silicon taiyo denchi no gijutsu kaihatsu (kohinshitsu tankessho silicon kiban no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development for high quality efficiency singlecrystalline silicon substrates in fiscal 1994. (1) On electromagnetic casting/once FZ bath method, a Si single crystal of 600mm long was successfully obtained by improvement of power source frequency and furnace parts. High carbon content resulted in no single crystal including solids. In undoped electromagnetic casting ingots, resistivities over 1500ohm-cm were obtained because of effective preventive measures from contaminants. (2) On electromagnetic melting CZ method, since vibration and temperature control of melt surface by magnetic shield was insufficient for stable pulling of single crystals, its practical use was hopeless. (3) On electron beam melting CZ method, a Si single crystal of 25mm in diameter was obtained by preventive measures from evaporation of Si and influence of deposits, and improved uniform deposition distribution in a furnace. The oscillation circuit constant of power source, and water-cooling copper crucible structure were also analyzed for the optimum design of electromagnetic melting furnaces. 3 figs., 1 tab.

  5. Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture application type thin film solar cells with new structure (development of technologies to manufacture amorphous silicon and thin film poly-crystal silicon hybrid thin film solar cells); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Research and development was performed with an objective to manufacture amorphous silicon and thin film poly-crystal silicon hybrid solar cells with large area and at low cost, being a high-efficiency next generation solar cell. The research was performed based on a principle that low-cost substrates shall be used, that a manufacturing process capable of forming amorphous silicon films with large area shall be based on, and that silicon film with as thin as possible thickness shall be used. Fiscal 1997 has started research and development on making the cells hybrid with amorphous silicon cells. As a result of the research and development, such achievements have been attained as using texture structure on the rear layer in thin poly-crystal silicon film solar cells with a thickness of two microns, and having achieved conversion efficiency of 10.1% by optimizing the junction interface forming conditions. A photo-deterioration test was carried out on hybrid cells which combine the thin poly-crystal silicon film cells having STAR structure with the amorphous silicon cells. Stabilization efficiency of 11.5% was attained after light has been irradiated for 500 hours or longer. (NEDO)

  6. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and development of technologies to manufacture amorphous silicon/thin film poly-crystalline silicon hybrid thin film solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon / usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Developmental research has been performed on large-area low-cost manufacturing technologies on hybrid thin film solar cells of amorphous silicon and poly-crystalline silicon. This paper summarizes the achievements in fiscal 1999. The research has been performed on a texture construction formed naturally on silicon surface, and thin film poly-crystalline silicon cells with STAR structure having a rear side reflection layer to increase light absorption. The research achievements during the current fiscal year may be summarized as follows: the laser scribing technology for thin film poly-crystalline silicon was established, which is important for modularization, making fabrication of low-cost and large-area modules possible; a stabilization efficiency of 11.3% was achieved in a hybrid mini module comprising of ten-stage series integrated amorphous silicon and thin film poly-crystalline silicon; structures different hybrid modules were discussed, whereas an initial efficiency of 10.3% (38.78W) was achieved in a sub-module having a substrate size of 910 mm times 455 mm; and feasibility of forming large-area hybrid modules was demonstrated. (NEDO)

  7. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for development of extra-high efficiency solar cells (fundamental research on extra-high efficiency Si solar cells); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Chokokoritsu taiyo denchi no gijutsu kaihatsu no tame no kaiseki hyoka (chokokoritsu silicon taiyo denchi gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Sekikawa, T; Suzuki, E; Ishikawa, K; Takato, H; Yui, N; Shimokawa, R [Electrotechnical Laboratory, Tsukuba (Japan)

    1994-12-01

    Described herein are the results of the FY1994 research program for analysis and evaluation for development of extra-high efficiency silicon solar cells. It is necessary for development of extra-high efficiency Si solar cells to extend as far as possible service life of minority carriers and to develop the evaluation techniques. Noting photoluminescence (PL) observable even with Si, the method of evaluating characteristics of minority carriers, which are not limited in samples, is developed to experimentally determine their service life from transitional response of the PL characteristics. Si has an extremely low quantum effect, because it is an indirect transitional semiconductor, and needs measurement of very high sensitivity. A rapid heat annealing apparatus and others to generate carriers in the infrared and ultraviolet regions are provided in consideration that these are possible means to increase efficiency. These possibilities will be pursued by developing the annealing techniques. 1 fig.

  8. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost large-area module manufacturing technology - Development of application type novel-structure thin-film solar cell manufacturing technology - Development of amorphous silicon/thin-film polycrystalline silicon hybrid thin-film solar cell manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu / amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The project aims to manufacture the above for the development of low-cost high-efficiency practical cells. Technologies were developed to homogeneously fabricate films with an average efficiency of 10% or more in a 100mm times 85mm area in a STAR (naturally surface texture and enhanced absorption with a back reflector) structure thin-film polycrystalline silicon (poly-Si) solar cell. The texture shape was improved for a higher light trapping effect and a STAR structure cell highly sensitive to long wavelengths and fit for use for a hybrid cell bottom layer was obtained. Various cells were examined for temperature characteristics, and it was found that thin-film poly-Si cells present a temperature coefficient equal to or less than that of bulk single-crystal silicon systems, and hybrid cells a temperature coefficient similar to that of a-Si systems. The technology was applied to a hybrid solar cell in which an a-Si cell was placed on STAR structure thin film poly-Si cells, and a resultant 3-layer a-Si/poly-Si/poly-Si cell exhibited a stabilization factor of 12.0% after 550 hours of optical irradiation. (NEDO)

  9. Achievement report for fiscal 1999 on the development of silicon manufacturing process rationalizing energy utilization. Research and study on analysis to put silicon raw material manufacturing technology for solar cells into practical use; 1999 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    In order to support the development and practical application of a mass production technology for manufacturing silicon raw materials for solar cells, research and study were performed on trends of developing the related technologies, and movements in markets and industries. This paper reports the achievements thereof in fiscal 1999. Markets for solar cells are growing favorably, and the worldwide solar cell production in 1999 was 200 MWp, of which 80% or more is occupied by crystalline silicon solar cell. While development of the manufacturing technology for SOG-Si mass-production is in the stage of operation research of pilot plants, it has been verified that problems of impurity contamination was resolved, and high-purity silicon can be manufactured. In developing the silicon scrap utilization technology and a technology to integrate silicon refinement with casting, a conversion efficiency of 14% or higher was acquired in prototype sample substrates. It has been verified that a variety of raw materials can be dealt with by using the above technology, which has a possibility of cost reduction. In developing a substrate manufacturing technology, a great progress has been made in enhancing the productivity and reducing the cost by developing the continuous casting in the electromagnetic casting and the automation technology. (NEDO)

  10. Development in fiscal 1998 of silicon manufacturing process to rationalize energy usage. Surveys and researches on analysis of practical application of technology to manufacture silicon raw materials for solar cells; 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    With an objective to develop a mass production technology to manufacture silicon raw materials for solar cells, and assist its practical application, surveys and analyses were performed on trends in development of the related technologies, the problems therein , market trends and industrial trends thereof. This paper summarizes the achievements in fiscal 1998. The worldwide production amount of solar cells in 1998 is estimated to have achieved 150 MW, and the silicon consumption reached the level of 2,300 tons. In spite of the economic recession environment, there was no change in the expansion trend. In developing an SOG-Si mass production and manufacturing technology, construction of pilot plants for each process has been completed, and entered into the operation research phase. In developing a technology to manufacture high quality poly-crystalline silicon substrates, fabrication has been completed on the on-line ingot cutting equipment and the plasma heating equipment, and the stage is now in operation research of continuous electromagnetic casting process. The conversion efficiency of the poly-crystalline silicon solar cells is 14 to 16% at the mass production level, whose enhancement requires indispensably the improvement in quality of the substrate. Discussions are required on the ingot manufacturing conditions in coordination with improvement in the cell manufacturing technology. (NEDO)

  11. Achievement report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Investigation and research on analyzing practical application of a technology to manufacture solar cell silicon raw materials; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    This paper describes the achievement in fiscal 1997 of analyzing practical application of a technology to manufacture solar cell silicon raw materials. Silicon consumption for solar cells in fiscal 1997 has increased to 2000-ton level, and the supply has been very tight. For drastic improvement in the demand and supply situation, development of SOG-Si manufacturing technology and its early practical application are desired. The development of the NEDO mass-production technology using melting and refining has completed constructing the process facilities in fiscal 1998, and will enter the stage of operational research. However, insufficiency in the basic data about behavior of impurities is inhibiting the development. In the substrate manufacturing technology, discussions have shown progress on use of diversifying silicons outside the standard by using the electromagnetic casting process. For slicing and processing the substrates, development of a high-performance slicing equipment and automatic rough rinsing machine is under way. Properties required on silicon raw materials vary considerably widely because of difference in cell making systems and conditions, which is attributable to unknown impurity behavior. When 1GW production is assumed, the cell module manufacturing cost is calculated as 137 yen/W, for which low-cost mass production for its realization, slicing productivity enhancement, and cost reduction are required. The paper also describes site surveys in overseas countries. (NEDO)

  12. Achievement report for fiscal 1991 on Sunshine Program-entrusted research and development. Research and development of amorphous silicon solar cells (Research on amorphous silicon interface); 1991 nendo amorphous silicon taiyo denchi no kenkyu kaihatsu seika hokokusho. Amorphous silicon no kaimen no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1992-03-01

    The amorphous solar cell interface has been under study for the enhancement of efficiency and reliability in amorphous solar cells, and this is the compilation of the results achieved in fiscal 1991. In the effort to enhance delta-doped amorphous silicon solar cell efficiency, an amorphous Si solar cell is built using a ZnO film as the transparent conductive film. As the result, an a-Si solar cell with a conversion efficiency of 11.5% is obtained. In the research on the suppression of photodegradation in a-Si, from the viewpoint that a reduction in the amount of hydrogen contained excessively in the film will be effective in decelerating photodegradation, a photoexcited hydrogen radical treatment method is newly proposed, and basic studies are conducted on it. As the result, it is found that an a-Si film processed by a 20-second hydrogen treatment at a substrate temperature of 460 degrees C exhibits a lower photodegradation rate than an ordinary a-Si film. In the research on the deposition of amorphous Si film, a VHF frequency is used instead of 13.56MHz for plasma, and an amorphous Si film is deposited efficiently at a lower voltage at which ions cause less damage. (NEDO)

  13. Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system /development of technology to manufacture solar cells/development of technology to manufacture thin film solar cells (development of technology to manufacture materials and substrates (development of technology to manufacture silicon crystal based high-quality materials and substrates)); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyo denchi seizo gijutsu kaihatsu, usumaku taiyo denchi seizo gijutsu kaihatsu, zairyo kiban seizo gijutsu kaihatsu (silicon kesshokei kohinshitsu zairyo kiban no seizo gujutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    It is intended to develop thin film solar cells capable of mass production with high photo-stability and at low cost. Thus, the objective of the present research is to analyze the growth process of micro crystal silicon based thin films, the crystal being a high quality silicon crystal based material, and develop technology to manufacture high-quality micro crystal silicon thin films based on the findings therefrom. It was found that, when silicon source is available in cathode, pure hydrogen plasma forms micro crystal silicon films by using the plasma as a result of the chemical transportation effect from the silicon source. It was revealed that the crystal formation due to hydrogen plasma exposure is performed substantially by the crystals forming the films due to the chemical transportation effect, rather than crystallization in the vicinity of the surface. The crystal formation under this experiment was concluded that the formation takes place during film growth accompanied by diffusion of film forming precursors on the surface on which the film grows. According to the result obtained so far, the most important issue in the future is particularly the control of crystal growing azimuth by reducing the initially formed amorphous layer by controlling the stress in the initial phase for film formation, and by controlling the film forming precursors. (NEDO)

  14. Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of amorphous solar cells (Theoretical research on amorphous silicon electronic states by computer-aided simulation); 1984 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Keisanki simulation ni yoru amorphous silicon no denshi jotai no rironteki kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1985-04-01

    Research on the basic physical properties of amorphous silicon materials and for the development of materials for thermally stable amorphous silicon is conducted through theoretical reasoning and computer-aided simulation. In the effort at achieving a high conversion efficiency using an amorphous silicon alloy, a process of realizing desired photoabsorption becomes possible when the correlation between the atomic structure and the photoabsorption coefficient is clearly established and the atomic structure is manipulated. In this connection, analytical studies are conducted to determine how microscopic structures are reflected on macroscopic absorption coefficients. In the computer-aided simulation, various liquid structures and amorphous structures are worked out, which is for the atom-level characterization of structures with topological disturbances, such as amorphous structures. Glass transition is simulated using a molecular kinetic method, in particular, and the melting of crystals, crystallization of liquids, and vitrification (conversion into the amorphous state) are successfully realized, though in a computer-aided simulation, for the first time in the world. (NEDO)

  15. Achievement report on Sunshine Program research and development for fiscal 1981. Research and development of amorphous solar cells (Optical research of electronic state in amorphous silicon); 1981 nendo amorphous silicon no denshi jotai no kagakuteki kenkyu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-01

    The basic physical properties of glow discharge-decomposed amorphous silicon film are studied. The performance of an a-Si p-i-n (amorphous silicon positive-intrinsic-negative) junction solar cell is found to be greatly affected by the binding of carriers along the p-i or i-n interface. A new concept is introduced, which is useful in the study of the photo-produced carrier collection process. The distance between the plasma excitation center and the substrate and the intensity of the electric field just above the substrate are changed systematically for the evaluation of film quality and for the study of film formation mechanism. It is found that plasma excitation as a mechanism of film deposition, the transportation of excited seeds to the substrate, and the incorporation of film constituting atoms into the film are important. A high-speed ion beam technique is used for the analysis of impurities. In the case of a-Si or a-SiC deposition by glow discharge decomposition, metallic Sn or In is deposited along the interface and diffused into the deposited film. The diffusion is closely related to the performance of solar cells, and a 2-layer structure incorporating the merits of both ITO (indium-tin oxide) and SnO{sub 2} films is found suitable for this purpose. Using an a-SiC:H/a-Si:H heterojunction solar cell, a conversion efficiency of 8.04% is achieved. (NEDO)

  16. Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Optical research on electronic state in amorphous silicon. (Research and development of amorphous solar cells); 1984 nendo amorphous silicon no denshi jotai no kogakuteki kenkyu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1985-03-01

    For realizing a high-performance amorphous solar cell, research is conducted on how to evaluate the amorphous silicon film formed by glow discharge decomposition as regards its optical and photoelectric characteristics, basic physical properties of its electronic states, and its film quality and film forming conditions. Research is conducted on the mechanism of glow discharge decomposition reaction using plasma spectroscopic techniques and on the conditions of film formation, when low-temperature SiO{sub 2} film growth is caused to occur by a directly excited photo-CVD (chemical vapor deposition) method in which a deuterium lamp and Xe lamp are the exciting light sources and SiH{sub 4} and O{sub 2} are the source gases. In research on the mechanism of photoelectric conversion in an a-Si film p-I-n junction system, a method is developed of evaluating physical property parameters in accordance with a field drift type photovoltaic effect model. In research on the evaluation of the optical properties of a-Si films using modulation spectroscopy and polarization analysis, electronic states in the vicinity of the a-Si based thin film band end is examined using an ER method which is one of the modulation spectrometric methods. The constitution and electronic states of a-Si films are studied using a high-speed ion beam scattering method and electronic spectrometry. (NEDO)

  17. Solar cell array for driving MOS type FET gate. MOS gata EFT gate kudoyo taiyo denchi array

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, S; Yoshida, K; Yoshiki, T; Yamaguchi, Y; Nakayama, T; Owada, Y

    1990-03-12

    There has been a semiconductor relay utilizing MOS type FET (field effect transistor). Concerning the solar cells used for a semiconductor relay, it is required to separate the cells by forming insulating oxide films first and to form semiconductor layers by using many mask patterns, since a crystal semiconductor is used. Thereby its manufacturing process becomes complicated and laminification as well as thin film formation are difficult, In view of the above, this invention proposes a solar cell array for driving a MOS type FET gate consisting of amorphous silicon semiconductor cells, which are used for a semiconductor relay with solar cells generating electromotive power by the light of a light emitting diode and a MOS type FET that the power output of the above solar cells is supplied to its gate, and which are connected in series with many steps. 9 figs.

  18. Stabilized efficiency of stacked a-Si solar cell; Sekisogata a-Si taiyo denchi no anteika koritsu

    Energy Technology Data Exchange (ETDEWEB)

    Takahisa, K; Kojima, T; Nakamura, K; Koyanagi, T; Yanagisawa, T [Electrotechnical Laboratory, Tsukuba (Japan)

    1997-11-25

    Different types of tests combining light and temperature were carried out in a laboratory on predicting long-term performance of stacked amorphous silicon solar cells. Cell terminals were left open, xenon was used as an irradiation light source, and cell temperature was controlled within {+-} 2 degC of the setting. The result of the experiment may be summarized as follows: with regard to the deterioration characteristics, the speed in which the efficiency changes reached a maximum within 10 hours, and thereafter the change has slowed down gradually in the case of temperature at 50 degC; in the case of 25 degC, the maximization is reached between 500 and 1000 hours; the stabilization efficiency turns out to be a pessimistic value according to the saturated value derived from an experimental expression, hence the value would have to be expressed by specifying cell temperatures, light intensities and elapsed time; the minimum value of seasonal variation may be estimated at about 85% as a pessimistic value; for recovery characteristics, the saturated value for the recovery tends to become lower as the lower the value immediately before the recovery; and if the light intensity is varied, the deterioration characteristic shifts to that at an individual light intensity. 4 refs., 11 figs., 2 tabs.

  19. On practicality of a hybrid car with solar cells; Taiyo denchi wo tosaishita hybrid car no jitsuyosei ni tsuite

    Energy Technology Data Exchange (ETDEWEB)

    Sasaki, K; Nagayoshi, H; Kamisako, K [Tokyo University of Agriculture and Technology, Tokyo (Japan)

    1997-11-25

    The paper stated a development of a hybrid car which is a parallel type with gasoline engine and electric motor as driving source (connecting each according to the situation) and is also equipped with solar cells. Specifications are gasoline engine of 1200cc, induction motor of 5.5kW, lead battery of 288V and 7.2kWh, monocrystal silicon solar cells of 180W maximum output, and body weight of 1100kg. The rear wheel is driven by electric motor, and the front wheel by gasoline engine. The car is loaded with battery charge use solar cells on hood and roof. To enhance cleaning degree, 1.6kW solar cells are installed as an installed power system and used for battery charge. Even by an electric motor with output less than that of the usual electric car, harmful exhaust gas emitted in start-up can be controlled. This is because the electric motor can be used in accelerating. It was confirmed that the power required for it could be supplied by solar cells installed on the car. The hybrid car is practically useful for prevention of local air pollution. 5 refs., 4 figs., 2 tabs.

  20. 29th Solar Energy Promotion Committee Meeting - 4th Solar Cell Liaison Meeting. (Report for fiscal 1991); Dai 29 kai taiyo energy suisuin iinkai dai 4 kai taiyo denchi renrakukai. 1991 nendo hokoku

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1992-04-21

    The above-named events took place in Tokyo in the period of April 21-24, 1992, and a total of 55 essays were presented. Presented in the session of the thin-film/a-Si systems were 27 essays, which were 'Light-induced degradation and its mechanism in a-Si:H and its multilayers,' 'Light-induced ESR (electron spin resonance) in a-Si{sub 1-x}N{sub x}:H,' 'Distribution of hydrogen surrounding light-induced defects,' 'Equilibration temperature and hydrogen diffusion in a-Si:H,' etc. Presented in the session of the thin-film compound systems were 6 essays, which were 'Local structure studies of CuInSe{sub 2} thin films,' 'Characterization of CuInSe{sub 2} bilayer films fabricated by ICB (ionized cluster beam) techniques,' etc. Presented in the session of the crystal compound systems were 7 essays, which were 'heteroepitaxy of In{sub x}Ga{sub 1-x}As/GaAs,' 'cell efficiency calculation for optimization of cell structure,' etc. Presented in the session of the crystal/Si systems were 15 essays which were 'Preparation of textured AR film,' 'Development of amorphous/thin film polycrystalline silicon tandem cell,' 'Development of high efficiency polycrystalline silicon thin-film solar cells,' 'Production of SOG (spin on glass)-Si from metallic grade silicon,' etc. (NEDO)

  1. 32nd Solar Energy Promotion Committee Meeting - 7th Solar Cell Liaison Meeting. Report for fiscal 1994; Dai 32 kai taiyo energy suishin iinkai dai 7 kai taiyo denchi renrakukai (1994 nendo hokoku)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-04-24

    The above-named events were convened in the period of April 24-27, 1995, when a total of 77 presentations were given on research achievements. In the session on thin type Si polycrystalline systems, 12 essays were presented concerning the thermodynamics of phosphorus and titanium in silicon, etc. In addition, a discussion was held on the 'Technological tasks remaining to be discharged toward industrialization.' In the session on thin film polycrystalline silicon systems, 5 essays were presented and 'Technological tasks related to thin film polycrystalline silicon solar cell' was discussed. In the session on ultrahigh efficiency Si systems, 5 essays were presented and 'Tasks related to the development of ultrahigh frequency single crystal Si solar cell' was discussed. At the symposium, 'Adoption of new energy to be accelerated following the formulation of the New Energy Introduction Guidelines' and 'Outlook for thin film solar cell practical application' were taken up. Various essays were presented and a discussion was held in each of the other sessions on ultrahigh efficiency III-V group systems, thin film chalcopyrite/II-VI group systems, international collaboration, matters related to systems, and thin film a-Si systems. (NEDO)

  2. 32nd Solar Energy Promotion Committee Meeting - 7th Solar Cell Liaison Meeting. Report for fiscal 1994; Dai 32 kai taiyo energy suishin iinkai dai 7 kai taiyo denchi renrakukai (1994 nendo hokoku)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-04-24

    The above-named events were convened in the period of April 24-27, 1995, when a total of 77 presentations were given on research achievements. In the session on thin type Si polycrystalline systems, 12 essays were presented concerning the thermodynamics of phosphorus and titanium in silicon, etc. In addition, a discussion was held on the 'Technological tasks remaining to be discharged toward industrialization.' In the session on thin film polycrystalline silicon systems, 5 essays were presented and 'Technological tasks related to thin film polycrystalline silicon solar cell' was discussed. In the session on ultrahigh efficiency Si systems, 5 essays were presented and 'Tasks related to the development of ultrahigh frequency single crystal Si solar cell' was discussed. At the symposium, 'Adoption of new energy to be accelerated following the formulation of the New Energy Introduction Guidelines' and 'Outlook for thin film solar cell practical application' were taken up. Various essays were presented and a discussion was held in each of the other sessions on ultrahigh efficiency III-V group systems, thin film chalcopyrite/II-VI group systems, international collaboration, matters related to systems, and thin film a-Si systems. (NEDO)

  3. 29th Solar Energy Promotion Committee Meeting - 4th Solar Cell Liaison Meeting. (Report for fiscal 1991); Dai 29 kai taiyo energy suisuin iinkai dai 4 kai taiyo denchi renrakukai. 1991 nendo hokoku

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1992-04-21

    The above-named events took place in Tokyo in the period of April 21-24, 1992, and a total of 55 essays were presented. Presented in the session of the thin-film/a-Si systems were 27 essays, which were 'Light-induced degradation and its mechanism in a-Si:H and its multilayers,' 'Light-induced ESR (electron spin resonance) in a-Si{sub 1-x}N{sub x}:H,' 'Distribution of hydrogen surrounding light-induced defects,' 'Equilibration temperature and hydrogen diffusion in a-Si:H,' etc. Presented in the session of the thin-film compound systems were 6 essays, which were 'Local structure studies of CuInSe{sub 2} thin films,' 'Characterization of CuInSe{sub 2} bilayer films fabricated by ICB (ionized cluster beam) techniques,' etc. Presented in the session of the crystal compound systems were 7 essays, which were 'heteroepitaxy of In{sub x}Ga{sub 1-x}As/GaAs,' 'cell efficiency calculation for optimization of cell structure,' etc. Presented in the session of the crystal/Si systems were 15 essays which were 'Preparation of textured AR film,' 'Development of amorphous/thin film polycrystalline silicon tandem cell,' 'Development of high efficiency polycrystalline silicon thin-film solar cells,' 'Production of SOG (spin on glass)-Si from metallic grade silicon,' etc. (NEDO)

  4. Control method for light deterioration of amorphous solar cell. 2. Temperature effect method; Amorphous taiyo denchi no hikari rekka yokuseiho. 2. Ondo kokaho

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, H; Itsumi, J; Sano, N [Kumamoto Institute of Technology, Kumamoto (Japan)

    1997-11-25

    Experimental studies have been carried out on suppressing early deterioration in amorphous silicon solar cells. The amorphous silicon solar cell is characterized by deterioration due to light irradiation and restoration due to temperature rise. An exposure experiment was performed under three conditions: installation in natural environment, installation with rear side of the solar cells covered with an insulating material, and installation with rear side of the solar cells covered with warming elements and an insulating material. Tests were made on suppressing progress of the early deterioration caused by temperature conditions. As a result, the efficiency in the natural condition was found to decrease as largely as 32% in an open circuit condition and 58% in a short circuit condition. The efficiency reduction rate was smaller in the open circuit condition when the insulation material was installed, but in the short circuit condition, resistance characteristics caused by rain water and electrolytic corrosion were exhibited. For the case with warming elements installed, the reduction in the efficiency was more remarkable, contrary to the expectation. The cause was determined that water existing between the rear side and the warming elements was warmed up, accelerating the electrolytic action, and resulting in deterioration advanced over a wide area in the rear side. 6 refs., 6 figs., 3 tabs.

  5. 31st Solar Energy Promotion Committee Meeting - 6th Solar Cell Liaison Meeting. Report for fiscal 1993; Dai 31 kai taiyo energy suishin iinkai dai 6 kai taiyo denchi renrakukai (1993 nendo hokoku)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-04-25

    The above-named events were convened in the period of April 25-28, 1994, when a total of 71 presentations were given on research achievements. Presented in the session on thin film systems were 21 essays concerning the low cost manufacturing technology of low-area modules, development of film substrate a-Si solar cells, etc. Discussed at the symposium were the 'Autonomous development of photovoltaic power generation' and 'Practical application and research and development.' Presented in the session on crystalline Si systems were 17 essays concerning real-time observation of epitaxial growth using STM (scanning tunneling microscope), research on single crystal silicon manufacturing technology, etc. Discussed in the session on international cooperation was 'How international joint research should be.' Presented in the session on systems were 11 essays including the research and development of photovoltaic modules integrated with construction materials. Presented in the session on III-V group systems were 7 essays including the development of crystallized compound solar cell technology. Presented in the session on chalcopyrite II-VI group systems were 9 essays including the development of large area CdS/CdTe solar cell. (NEDO)

  6. 28th Solar Energy Promotion Committee Meeting - 3rd Solar Cell Liaison Meeting. Report for fiscal 1990; Dai 28 kai taiyo energy suishin iinkai dai 3 kai taiyo denchi renrakukai. 1980 nendo hokoku

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1991-05-14

    The above events took place in Tokyo in the period May 14-17, 1991, when a total of 89 essays were presented. In relation with the thin film/a-Si systems, 55 presentations were given, which were 'Novel preparation technique termed Chemical Annealing for making a-Si:H with a rigid and stable Si-network,' 'Interface characteristics of a-Si:H films prepared by VHF (very high frequency) plasma CVD (chemical vapor deposition),' 'Preparation of amorphous superlattices by continuous method and characterization of the interface,' etc. In relation with the thin film/compound systems, 8 presentations were given, which were 'Preparation of CuInSe{sub 2} solar cells by selenization method,' 'Deposition of CuInSe{sub 2} films by ICB (ionized cluster beam) technique and their optical characterization,' 'Large-area CdS/CdTe solar cells,' etc. In relation with the crystal/compound systems, 8 presentations were given, which were 'Lattice strain relaxation processes in GaAs grown on Si,' 'Optical transmission studies of tandem solar cells,' etc. In relation with the crystal/Si systems, 18 presentations were given, which were 'Effect of electric field on effective minority carrier lifetime,' 'Computer analysis of surface recombination velocity for high efficiency crystalline silicon solar cells,' etc. (NEDO)

  7. 30th Solar Energy Promotion Committee Meeting - 5th Solar Cell Liaison Meeting. Combined report for fiscal 1989-1992; Dai 30 kai taiyo energy suishin iinkai dai 5 kai taiyo denchi renrakukai (1989-1992 nendo hokoku no matome)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1993-04-20

    The above-named events were convened in Tokyo in the period of April 20-23, 1993, where a total of 51 presentations were given on research achievements. Presented in the session on a-Si systems were 22 essays concerning high quality manufacturing technology - high integration technology, large area manufacturing technology - large area a-Si tandem solar cell, highly reliable manufacturing technology - bilayer device, composite transparent conductive film - transparent conductive film with performance enhanced by compositing, etc. Presented in the session on chalcopyrite and II-VI group systems were 8 essays concerning amorphous/compound tandem cell manufacturing technology, research on compound semiconductor solar cell, etc. Presented in the session of III-V group systems were 6 essays concerning research on compound semiconductor solar cell - superlattice structure tandem cell, development of InGaP/Si tandem solar cell, etc. In the session of crystalline Si systems, 15 essays were presented concerning highly pure silicon manufacturing technology, highly pure substrate manufacturing technology, etc. (NEDO)

  8. 31st Solar Energy Promotion Committee Meeting - 6th Solar Cell Liaison Meeting. Report for fiscal 1993; Dai 31 kai taiyo energy suishin iinkai dai 6 kai taiyo denchi renrakukai (1993 nendo hokoku)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-04-25

    The above-named events were convened in the period of April 25-28, 1994, when a total of 71 presentations were given on research achievements. Presented in the session on thin film systems were 21 essays concerning the low cost manufacturing technology of low-area modules, development of film substrate a-Si solar cells, etc. Discussed at the symposium were the 'Autonomous development of photovoltaic power generation' and 'Practical application and research and development.' Presented in the session on crystalline Si systems were 17 essays concerning real-time observation of epitaxial growth using STM (scanning tunneling microscope), research on single crystal silicon manufacturing technology, etc. Discussed in the session on international cooperation was 'How international joint research should be.' Presented in the session on systems were 11 essays including the research and development of photovoltaic modules integrated with construction materials. Presented in the session on III-V group systems were 7 essays including the development of crystallized compound solar cell technology. Presented in the session on chalcopyrite II-VI group systems were 9 essays including the development of large area CdS/CdTe solar cell. (NEDO)

  9. 28th Solar Energy Promotion Committee Meeting - 3rd Solar Cell Liaison Meeting. Report for fiscal 1990; Dai 28 kai taiyo energy suishin iinkai dai 3 kai taiyo denchi renrakukai. 1980 nendo hokoku

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1991-05-14

    The above events took place in Tokyo in the period May 14-17, 1991, when a total of 89 essays were presented. In relation with the thin film/a-Si systems, 55 presentations were given, which were 'Novel preparation technique termed Chemical Annealing for making a-Si:H with a rigid and stable Si-network,' 'Interface characteristics of a-Si:H films prepared by VHF (very high frequency) plasma CVD (chemical vapor deposition),' 'Preparation of amorphous superlattices by continuous method and characterization of the interface,' etc. In relation with the thin film/compound systems, 8 presentations were given, which were 'Preparation of CuInSe{sub 2} solar cells by selenization method,' 'Deposition of CuInSe{sub 2} films by ICB (ionized cluster beam) technique and their optical characterization,' 'Large-area CdS/CdTe solar cells,' etc. In relation with the crystal/compound systems, 8 presentations were given, which were 'Lattice strain relaxation processes in GaAs grown on Si,' 'Optical transmission studies of tandem solar cells,' etc. In relation with the crystal/Si systems, 18 presentations were given, which were 'Effect of electric field on effective minority carrier lifetime,' 'Computer analysis of surface recombination velocity for high efficiency crystalline silicon solar cells,' etc. (NEDO)

  10. Temperature dependence of the early degradation in a-Si solar cells; Amorphous Si taiyo denchi no shoki rekka no ondo izonsei

    Energy Technology Data Exchange (ETDEWEB)

    Takahisa, K; Kojima, T; Nakamura, K; Koyanagi, T; Yanagisawa, T [Electrotechnical Laboratory, Tsukuba (Japan)

    1997-11-25

    Discussions were given on early degradation in up to about ten minutes in amorphous silicon solar cells. The experiment has used a model cell of single junction layer for power use with a Glass/ITO/P-i-n:a-Si/Al structure. Test samples were annealed at 130 degC for 30 minutes to eliminate hysteresis of degradation during storage. Xenon was used as an irradiation light source, and the temperatures were varied from 0 to 100 degC and the measurement time was set to 0.1 to 500 minutes. The result of the experiment may be summarized as follows: with regard to time-based degradation pattern for conversion efficiency, the tilt of a pattern to express degradation rate varies with temperature conditions, and changes in 10 to 20 minutes of light irradiation as a boundary; in long-term degradation after 20 minutes, the higher the environmental temperature, the lower the degradation is suppressed, but the rate of initial degradation up to about 10 minutes is higher as the higher the temperature; and the degradation rate increases as the higher the temperature in the initial degradation of about 10 minutes, whereas, corresponding to this fact, it is estimated that a phenomenon is involved, in which carrier recombination defect may increase. 4 refs., 7 figs., 1 tab.

  11. Indirect solar-pumped laser diode using a solar cell; Taiyo denchi wo mochiita taiyoko kansetsu reikigata handotai laser no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Kanamori, Y.; Yugami, H.; Naito, H.; Arashi, H. [Tohoku University, Sendai (Japan). Faculty of Engineering

    1996-10-27

    This paper describes the operating characteristics of a stabilizing circuit using commercial electricity, those of a stabilizing circuit using solar cells, relation between the quantity of solar radiation and the maximum output of a semiconductor laser diode (LD), and simulation results of annual LD output in Sendai City. The stabilizing circuit for the solar-cell driven LD was structured such that the output of the solar cell panels was guided to a DC/DC converter, that the voltage was set at a prescribed value and that the current was stabilized with the use of power MOSFET. The solar cells used in the experiment were monocrystal silicone solar cells with the maximum output of 53W each. In the experiment, the LD was protected by stabilizing the current at a set value when an excess current was supplied to the stabilizing circuit. As a result of the simulation of the annual LD output from the meteorological data of Sendai City, it was predicted that a solar cell of approximately 1kW was able to provide an annual output of 102MJ and that the efficiency was highest with four sheets of the solar cell. Consequently, consistency proved to be essential between the LD and the solar cell output. 3 refs., 7 figs.

  12. Achievement report for fiscal 1997 on development of practical application technology for photovoltaic power generation systems. Development of technologies to manufacture thin film solar cells (development of technologies to manufacture silicon crystal based high-quality materials and substrates / survey and research on analysis of practical application); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (zairyo kiban seizo gijutsu kaihatsu / silicon kesshokei kohinshitsu zairyo kiban no seizo gijutsu kaihatsu (jitsuyoka kaiseki ni kansuru chosa kenkyu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    As a plan to develop technologies to manufacture materials and substrates for thin film solar cells, it is intended to reduce defect density, enhance film forming speed, largely improve the photo-electric conversion efficiency and increase manufacturing productivity. These goals will be realized by establishing methods to control defect density, crystal particle diameters and crystallization rate in silicon crystal systems. A technology to form micro-crystal silicon-based thin films will be developed, that have superior photo-stability, and are capable of realizing low cost and mass production. Discussions will be given on a high-density plasma control technology, a fundamental property evaluation technology for micro crystal silicon thin films, and a device design simulation technology. A technology will be developed to form amorphous silicon layer on a stainless steel substrate by using the plasma CVD process. At the same time, discussions will be given on optical annealing and thermal annealing as reformation methods. Fiscal 1997 has surveyed component technologies to identify and analyze quickly and accurately the technical trends inside and outside the country, and to mass produce thin film solar cells. The Material and Substrate System Technology Subcommittee (silicon crystals) was held to deliberate the four-year development program and its progress. (NEDO)

  13. Fiscal 1993 achievement report on New Sunshine Program. Development of photovoltaic power generation system practicalization technology (Development of ultrahigh-efficiency solar cell technology - Development of crystalline compound solar cell technology); 1993 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Chokokoritsu taiyo denchi no gijutsu kaihatsu (kessho kagobutsu taiyo denchi no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-03-01

    Efforts are made to enhance InGaP cell efficiency (target 16%) on a GaAs substrate by prolonging the InGaP minor carrier life span. In preparation of InGaP cell fabrication on silicon, a study is made of epitaxial growth of a wide band gap layer. By improving on the conditions of InGaP heteroepitaxial growth under the MOCVD (metal-organic chemical vapor deposition) method on a GaAs substrate, the InGaP cell base layer minority carrier life span is increased to be longer than 5ns. The use of epitaxial crystals greatly improves on the efficiency of InGaP cells on a GaAs substrate. Furthermore, cell structure improvement and the like are accomplished, which results in the achievement of an efficiency rate of 17.4%. As a basic technology for the fabrication of InGaP/Si tandem cells, experiments are conducted of growing a wide gap layer for the growth of Ln{sub 1-x}Ga{sub x}P on an silicon substrate. For the evaluation of epitaxial crystals and interfaces, time resolution photoluminescence measurement is performed and the result is compared with the result of simulation. (NEDO)

  14. Fiscal 1999 research and development of technologies for practical application of photovoltaic power generation systems. Research and development of solar cell evaluation system (Survey of research and development of solar cell evaluation system); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyo denchi hyoka system no kenkyu kaihatsu (taiyo denchi hyoka system no kenkyu kaihatsu chosa)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The fiscal 1999 results of survey and research conducted for the establishment of solar cell performance evaluation and reliability evaluation methods are reported. In the development of a super high fidelity (broad spectrum) solar simulator for cell evaluation, a prototype was tested for performance evaluation, and initially set values were achieved. In the development of a large-area module evaluation technology, the radiation area was increased to be 1.0m times 1.0m large. Outdoor exposure tests continued at 5 sites in Japan, 3 sites in Australia, and 1 site in Oman, and analyses and databasing were carried out for the outputs of various types of solar cell modules. As for the problem of coloring of fillers which are module constituents, coloring in the U.S. was attributed to high temperature and intensive insolation, and in Austria to an oxidation inhibitor. In the development of a photo-accelerated degradation testing method for Si-based solar cells, application of the cycled illumination test was found feasible. In this test method, an amorphous silicon solar cell retains 70% of the initial Pmax value even after the passage of a period equivalent to 30 years. (NEDO)

  15. Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system/development of technology to manufacture thin film solar cells/development of technology to manufacture low-cost large-area modules/development of technology to manufacture next generation thin film solar cells (development of technology to manufacture applied type thin film solar cells with new construction); 1997 nendo tiayoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module esizo gijutsu kaihatsu (jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu, oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    A thin film single crystal silicon solar cell module is developed, in which a porous silicon layer is formed on the surface of a long-sized single crystal silicon substrate, a single crystal silicon film is integrated on the layer by epitaxially growing the film thereon to form a solar cell, and the solar cell is peeled off from the silicon substrate and transferred to a plastic film substrate. The achievements during this fiscal year may be summarized as follows: simultaneous formation of a porous silicon layer on a silicon substrate, reduction of anode formation current density from 200 mA/cm{sup 2} to 10 mA/cm{sup 2}, development of a silicon epitaxial device using a carbon heater, and attainment of aperture conversion efficiency of 11.8% in a thin film single crystal silicon solar cell. Three kinds of methods were developed to peel off the solar cell. A method was developed to grind silicon substrate surface from which the solar cell has been peeled off. A technology was developed to obtain a long-sized silicon substrate of about 30 cm times 10 cm times 0.1 cm from a 4-inch silicon ingot by using a wire saw. (NEDO)

  16. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of technologies to manufacture applied type thin film solar cells with new structure and development of high-efficiency hybrid thin film/sheet solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (oyogata shin kozo usumaku taiyo denchi no seizo gijutsu kaihatsu (kokoritsu hybrid gata usumaku / sheet taiyo denchi no seizo gijutsu kaihatsu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    With an objective to develop low-cost and high-efficiency hybrid thin film/sheet solar cells, research and development has been performed. This paper summarizes the achievements in fiscal 1999. The research is related to a hybrid construction, in which the upper cells of amorphous silicon thin film are formed on the lower cells bonded with micro-crystalline silicon thin film relative to a poly-crystalline silicon sheet. In the technology to form the upper cells, a pin-construction using amorphous silicon thin film made by using the plasma CVD process was adopted, whereas an open circuit voltage of 1.45V, a short circuit current of 13.6 mA/cm{sup 2}, and a conversion efficiency of 13.5% were obtained. In the technology to form the substrate for the lower cells, formation of flat silicon thin plate that can be peeled off was identified as a result of adopting the construction in which a graphite substrate is provided on a rotating cooling body of 12-prism type. With regard to the technology to bond and form the lower cells, electrical properties of hetero-bonded cells were discussed, and an open circuit voltage of 0.605V and a conversion efficiency of 14.3% were obtained as a result of enhancing the film quality and optimizing the film thickness. (NEDO)

  17. Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system/development of technology to manufacture thin film solar cells (development of technology to manufacture applied type thin film solar cells with new construction) (development of technology to manufacture micro light collection type solar cells); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (micro shukogata taiyo denchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    These technological developments are intended to demonstrate module efficiency of a micro light collection type solar cell of 15% by fiscal 2000, and obtain prospect on the module manufacturing cost of 140 yen per watt. Discussions given during fiscal 1997 are as follows: development has been performed on a design method to decide construction of a non-tracking micro light collection type module; in the state of cells being integrated on the module, the cells are arranged minutely and discretely, whereas, with discussions on a method to form them and assessment of the optical system as the main objective, single crystal silicon solar cells with a size smaller than 5 mm were fabricated on a trial basis; problems of forming micro cells by using the wafer cutting process were clarified; micro cells operating on light collection were fabricated trially to extract technological problems in light collecting operation and discuss technical problems in mass production; and development was performed on an evaluation method to analyze the cells' light collecting operation, and discussions were given on a method to estimate power generation amount from the light collection type modules. (NEDO)

  18. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for development of extra-high efficiency solar cells (fundamental research on extra-high efficiency III-V compound semiconductor tandem solar cells); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Chokokoritsu taiyo denchi no gijutsu kaihatsu no tame no kaiseki hyoka (chokokoritsu III-V zoku kagobutsu taiyo denchi gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Sekikawa, T; Kawanami, H; Sakata, I; Nagai, K; Matsumoto, K; Miki, K [Electrotechnical Laboratory, Tsukuba (Japan)

    1994-12-01

    Described herein are the results of the FY1994 research program for development of extra-high efficiency III-V compound semiconductor tandem solar cells. Heteroepitaxial structures of compound semiconductors, such as GaAs, on silicon substrates are analyzed and evaluated by EXAFS, Raman and RHEED for the initial stage of the film growth and heterointerfaces. The device capable of in-situ observation of the growing surface structures during the period of heteroepitaxial film growth is introduced, to investigate the effects of rise-up and initial growth conditions on defects. The effects of atomic hydrogen on growth of a GaAs film on a silicon substrate are investigated from photoluminescence and solar cell characteristics, to confirm the effects of reducing defects. Heteroepitaxial growth of InGaP, which has the optimum band width for forming multi-junction silicon solar cells, on a silicon substrate is investigated, to find that an interfacial buffer layer is necessary to form a good film. 2 figs.

  19. Accomplishments hitherto achieved regarding the development of solar cell manufacturing technologies and the future course. Annex; Taiyo denchi seizo gijutsu kaihatsu no koremade no seika to kongo no hoko. Fuzoku shiryo

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1985-07-01

    Collected in this paper are the results of evaluation and studies which were conducted, regarding the development of solar cell manufacturing technologies, by the Solar Cell Manufacture Evaluation Sub-Committee at its 4 meetings held in the period from May to August, 1985. For the development of technologies of manufacturing solar cells under the Sunshine Program, the development of technologies for manufacturing crystalline solar cells and amorphous solar cells is required. The Industrial Technology Council, Ministry of International Trade and Industry, in August, 1982, set intermediate goals to be achieved by fiscal 1985. To be developed for the practical application of crystalline silicon solar cells are a low cost experimental silicon refining system and an experimental solar panel manufacturing system. To be carried out for amorphous solar cells are basic studies including a study of physical properties, the development of a large-area high-efficiency solar cell manufacturing technology, and the development of a low cost monosilane manufacturing technology making use of molten salt electrolysis in a closed cycle. In fiscal 1984, 90% of the goals were attained, and now it is expected that almost all will be complete within fiscal 1985. (NEDO)

  20. Change of the equivalent circuit constants accompanied by the degradation and recovery of efficiency on a-Si solar cells; A-Si taiyo denchi no koritsu no rekka to kaifuku ni tomonau toka kairo teisu no henka

    Energy Technology Data Exchange (ETDEWEB)

    Takahisa, K; Kojima, T; Nakamura, K; Koyanagi, T; Yanagisawa, T [Electrotechnical Laboratory, Tsukuba (Japan)

    1997-11-25

    Investigations were given on how the equivalent circuit constants change when efficiency of amorphous silicon solar cells changes with time in light degradation and temperature recovery. In the experiment, light irradiation tests under a constant temperature and light intensity condition, followed by recovery tests under a constant temperature and constant weak light intensity or constant temperature condition were repeated continuously. According to the result of an experiment on single layer type cells, the change in each equivalent circuit constant in association with degradation in efficiency and file factor and variation in recovery is reversible mostly. However, a slightly irreversible component was recognized only in the initial degradation process in series resistance and diode factor values. With regard to stacked cells, it was suggested that the main players to determine cell characteristics during the processes of deterioration and recovery take turns among the three layers as follows: the shape of the time-based change in the efficiency comes different and is not saturating; as the efficiency decreases, the extent of the change increases in the diode factor and series resistance; and the path the deterioration takes differs from that the recovery takes. 2 refs., 12 figs.

  1. Fiscal 1999 research and development of technologies for practical application of photovoltaic power generation systems. Development of ultrahigh-efficiency crystalline compound solar cell manufacturing technology (Survey of peripheral element technologies - Survey of environmental adaptation of next-generation solar cell development); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu (shuhen yoso gijutsu ni kansuru chosa kenkyu - jisedai taiyo denchi kaihatsu kankyo tekioka chosa)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Surveys are conducted of photovoltaic power system development projects and their utilization in Japan and overseas, and a discussion is made on the progress, technical challenges, effects, and implementation systems relating to the solar cell application technology development project under the New Sunshine Program. Compiled in the report are the results of surveys of the research and development of photovoltaic power systems and their diffusion in the U.S. and European nations, and the research and development strategies for and the trends of the development of various types of solar cells in these countries. The trends of research and development of non-conventional type solar cells are also collected, which include 3 cases of TPV (thermophotovoltaic) devices, 5 cases of new inorganic materials, 1 case of new organic materials, and 4 cases of dye-sensitized solar cells. In relation to the status of resources of crystalline compound-based solar cell materials, raw materials for solar cells other than silicon are taken up, and their reserves, manufacturing methods, quantities yielded and consumed, costs, etc., are surveyed. These are all taken into consideration in discussing the basic approach to the study of future research and development as it ought to be. (NEDO)

  2. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost/large-area module manufacturing technology - Development of novel amorphous solar cell module manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (shingata amorphous taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The project intends to improve on large-area amorphous silicon solar cell performance and to develop high-throughput manufacturing technologies for a reduction in the cost of modules. A film substrate type amorphous solar cell structure of the serial connection type named SCAF (series-connection through apertures formed on film) is contrived. Under this method, film formation using a stepping roll system newly developed for glass substrates may be applied, and the number of manhours required is allowed to be less than under conventional serial connection forming processes. The new technique is characterized in that serial connections are established via through-holes provided in plastic substrates. Making use of the technology, progress is attained in the development of high-throughput process technology for film substrate type amorphous solar cells and of efficiency enhancement technology. In fiscal 1997, an electron beam unit for plasma generation aiming at the elucidation of reaction processes in plasma was introduced, and technologies based on the equilibrium discharge technique were developed enabling high-speed a-Si film formation without degradation in film quality. The effect of trace boron addition to the tandem cell bottom I layer was investigated, and a stabilization rate of 8.05% was achieved using a 40cm times 80cm large SCAF cell. In fiscal 1998, endeavors were exerted for similar developments. (NEDO)

  3. Solar cell driving device. Taiyo denchi kudo sochi

    Energy Technology Data Exchange (ETDEWEB)

    Yamazaki, K [Shibaura Engineering Works Co. Ltd., Tokyo (Japan)

    1991-01-24

    In driving a motor by a solar cell, if the sun light is weak, the motor cannot be started because of the fact that the start-up current of the motor is more than the current needed for driving. In this invention, a current limiting circuit is placed between the solar cell and the load, whereby the current limitation by said limiting circuit is released when the detected voltage of the solar cell reached the value required for starting the load. The current limiting circuit uses a semiconductor element such as a thyrister and a transistor which general limits a current. Such a current limiting circuit is controlled by a voltage detecting circuit and is so constructed that the cell limitation is released when a specific preset volatge of the solar cell is reached. 2 figs.

  4. Solar cell element, solar cell system, and illuminating system; Taiyo denchi soshi, taiyo denchi sochi oyobi shomei system

    Energy Technology Data Exchange (ETDEWEB)

    Oka, Y. [Toshiba Laytech Co. Ltd., Tokyo (Japan)

    1997-12-12

    This invention relates to provision of a photocatalytic film on the light intercepting surface for the solar cell substrate of the solar cell element, which transmits the lights in the wavelength region longer than ultraviolet, i.e. 410nm and longer wavelength lights, and intercepts the lights in ultraviolet wavelength region. This photocatalytic film retards the decrease in the light interception by the solar cell element, and simplifies the maintenance because it oxidizes and decomposes organic matters by the less than 410nm ultraviolet ray contained in the sunlight to prevent adhesion of organic substance on the light intercepting surface of the solar cell element. In addition, decomposed dirt composition is washed away to accelerate dirt removing performance by rain waterdrop adhesion on the intercepting surface when it is used outdoors. As to this photocatalytic film, the thickness from 0.01 to 0.5{mu}m is desirable, effective phtocatalytic activity can not be expected if the thickness is less than 0.01{mu}m, and transmission factor becomes smaller if the thickness exceeds 0.5{mu}m, producing no electromotive force. TiO2, ZnO, and FeTiO3 are used as such photocatalyst. 6 figs.

  5. Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (production technology for amorphous silicon solar cell modules); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (amorphous taiyo denchi module seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of amorphous Si solar cell modules in fiscal 1994. (1) On process technology for prototype film substrate solar cells, an advanced preprocessing equipment for film substrates, stepping roll type film forming technology, and prototype submodules were studied. A conversion efficiency of 7.2% was achieved by use of the submodule formed in an effective region of 40 {times} 40cm{sup 2}. (2) On efficiency improvement technology for film substrate solar cells, p/i and n/i interfaces, forming condition for Ag film electrodes, film thickness of transparent electrode ITO, and optimum transmissivity were studied. (3) On technology for advanced solar cells, high-quality a-SiGe: H film, ion control in plasma CVD, and a-Si film formation by plasma CVD using SiH2Cl2 were studied as production technology of narrow gap materials. (4) On advanced two-layer tandem solar cells, the defect density in optical degradation of a-Si cells by reverse bias dark current was evaluated, and outdoor exposure data were analyzed. 4 figs., 1 tab.

  6. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (development of fabrication technology of thin film polycrystalline Si solar cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (usumaku takessho silicon kei taiyo denchi seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of thin film polycrystalline Si solar cells in fiscal 1994. (1) On the fabrication technology of high-quality Si thin films, the new equipment was studied which allows uniform stable melting recrystallization over a large area. The new equipment adopted a heating method based on RTP system, and is now under adjustment. (2) On the fabrication technology of light/carrier confinement structure, degradation of hydrogen-treated thin film Si solar cells by light irradiation was examined. As a result, since any characteristic degradation was not found even by long time light irradiation, the high quality of the cells was confirmed regardless of hydrogen-treatment. Fabrication of stable reproducible fine texture structure became possible by using fabrication technology of light confinement structure by texture treatment of cell surfaces. (3) On low-cost process technology, design by VEST process, estimation of cell characteristics by simulation, and characteristics of prototype cells were reported. 33 figs., 1 tab.

  7. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (improvement of conversion efficiency of amorphous silicon solar cells after degradation); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (amorphous taiyo denchi no shoki rekkago koritsu kojo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development for qualitative improvement of a-Si solar cells after initial degradation in fiscal 1994. On the fabrication technology of light-stable a-Si films, the film formation method possible to control combined hydrogen by repetitive formation/treatment was developed. The obtained high-quality light-stable a-Si film was featured by low defect density in a wide optical band gap range, and defect density of nearly 3 {times} 10{sup 16}/cm{sup -3} after light irradiation. The light degradation rate of the cell where the a-Si film was applied to i layer was relatively stable by 10% or less. The a-Si/a-Si double-layer tandem cell fabricated by this technology produced a high conversion efficiency of 10.5%. By applying {mu}c-Si material to photoactive layer as narrow band gap material, the cell with optical sensitivity even in long wavelength ranges more than 1000nm was obtained. The a-Si/{mu}c-Si double-layer tandem cell produced an initial efficiency of 8.0% and an efficiency after degradation of 7.5%. 12 figs., 3 tabs.

  8. Studies of flat-plate solar air collectors with absorber plates made of amorphous silicon photovoltaic modules; Amorphous taiyo denchi module wo shunetsuban to shita heibangata kukishiki shunetsuki no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Sato, K; Ito, S; Miura, N [Kanagawa Institute of Technology, Kanagawa (Japan)

    1996-10-27

    A light/heat hybrid air type heat collector has been developed in which heat is collected by solar cell panels. In Type 1 heat collector provided with a glass cover, two modules are connected in series and placed under a glass cover to serve as a heat collecting plate, each module built of a steel plate and two thin-film amorphous solar cells bonded to the steel plate. Air runs under the heat collecting plate. Type 2 heat collector is a Type 1 heat collector minus the glass cover. Air is taken in by a fan, runs in a vinyl chloride tube, and then through the heat collector where it is heated by the sun, and goes out at the exit. Heat collecting performance was subjected to theoretical analysis. This heat collector approximated in point of heat collection a model using a board painted black, which means that the new type functions effectively as an air-type heat collector. Operating as a photovoltaic power generator, the covered type generated approximately 20% less than the uncovered type under 800W/m{sup 2} insolation conditions. Type 1 has been in service for five months, and Type 2 for 2 months. At present, both are free of troubles such as deformation and the amorphous solar cell modules have deteriorated but a little. 4 refs., 9 figs.

  9. Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (technical development for production of high purity silicon); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (taiyo denchiyo silicon seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on development of manufacturing technologies of Si for solar cells in fiscal 1994. (1) P in Si could be successfully reduced to 0.1ppmw by EB melting method. The condition possible to reduce P in Si while continuously supplying metal Si was found. The 20kg class EB melting equipment was also designed and manufactured which can be connected with solidifying rough refining process. (2) Use of a water-cooling copper mold was studied using a small melting equipment for cost reduction in solidifying rough refining process. As a result, the prospect of crucible-free technology for removal of P and solidifying rough refining was obtained. (3) B in Si could be successfully reduced to the target of 0.1ppmw by vapor addition method using a plasma melting equipment. (4) The prototype SOG-Si achieved a conversion efficiency of 14.1% as solar cell. In addition, the advanced solar cell prepared by efficiency enhancement process achieved a conversion efficiency of 15.9%. 3 figs.

  10. Research and development of system to utilize photovoltaic energy. Survey on the high-durability and low-cost materials for constructing the solar-cell module and its structure; Taiyoko hatsuden riyo system no kenkyu. Taiyo denchi module yo kotaikyusei tei cost zairyo, kozo ni kansuru chosa

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the results obtained during fiscal 1994 on a survey on the high-durability and low-cost materials for constructing the solar-cell module and on its structure. With respect to forms and materials used in the present solar-cell modules, identification was made on the current status of products commercially available and developed inside and outside Japan. Main types of solar cells used for electric power are of crystal-based silicon. Amorphous silicon and CdS-CdTe are used for consumer applications of indoor and outdoor use. As regards transparent resin materials, fluorine resin, PET, acryl, and polyimide are used as surface materials, and EVA, silicon and PVB are often used as fillers. Developments inside and outside Japan are limited to systems of polycarbonate, methacryl, fluorine, polyurethane, acryl and polyester. Butyl rubber and polyurethane are used as sealing materials. Developments are being performed on silicon rubber, polychloroprene rubber and EPT rubber for shaped materials, and silicon systems, urethane systems and polysulfide systems for non-shaped materials. 3 figs., 8 tabs.

  11. Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system (development of technology to manufacture thin film solar cells (surveys and researches on analyzing practical application )). Volume 1; 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (jitsuyoka kaiseki ni kansuru chosa kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    It is intended to identify and analyze quickly and accurately the technological trends inside and outside the country on thin film solar cells, to reflect the results effectively on research and development of practical application of the thin film solar cells for power use, and to aid the research on practical application of the technology to manufacture the thin film solar cells. This fiscal year introduced the new project of researching and developing the poly-crystal silicon-based thin film solar cells. Discussions were given on designing the solar cells, including setting of thickness of an active layer required to improve efficiency of the silicon-based thin film solar cells, the light confining technology, and surface passivation. Comparisons and discussions were given on the new amorphous/poly-crystal silicon thin film manufacturing method and the conventional plasma CVD process. A research development program was introduced for a super laboratory to aid establishing the practical application technology for the silicon-based thin film solar cells. Chalcopyrite compounds including CuInSe2, and CdTe have not shown deterioration even in a long-term outdoor exposure test, hence they are noted as materials for high-efficiency solar cells and studied actively. Although still small in area, the net conversion efficiency was found in the order of 17%. Technological development has started to search mass production processes and commercialization possibility in the future. (NEDO)

  12. Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of production of low-cost monosilane); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (tei cost monosilane seizoho no kenkyu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-01

    A low-cost production method is developed for monosilane as a cell film material, 99.9995% pure at a manufacturing cost of 4,500 yen/kg (100 ton/year unit). An experimental unit with a maximum capacity of 1m{sup 3}/H (1 ton/month) gas production is built, and whether it is practical will be clarified by the end of fiscal 1983. The whole monosilane production process, consisting of the electrolysis of eutectic liquid of Li chloride and K chloride, hydrogenation of Li to be generated by the electrolysis, and the generation of monosilane through the reaction of the hydrogenated Li and silicon tetrachloride, proceeds in one large molten salt tub. The chlorine from the electrolysis and Si as material comes into reaction in a salination furnace for the generation of silicon tetrachloride to be supplied to the process. Minor tests are made involving pressure control, distance between the electrodes and the effect of the diaphragm, stirring in the hydrogenation chamber, dust in the monosilane generation chamber, and the insulation of the cathode lead rod, and the results are reflected on the process of experimental unit designing and building. The unit has harm neutralizing facilities for safety assurance because much hydrogen and a little chloride are consumed while the unit is in operation, with some silicon tetrachloride to be retained in the unit. An infrared absorption method is used to analyze impurities in the monosilane gas, when the method exhibits a capability of detecting 2ppm of methane. (NEDO)

  13. Change of environmental factors in different site which effect the conversion efficiency of photovoltaic module. Comparison of the environmental factors in Shinjuku Tokyo with the one in Chino Nagano; Kotonaru chiten ni okeru taiyo denchi no henkan koritsu ni eikyo wo ataeru kankyo inshi no henka. Tokyoto Shinjukuku to Naganoken Chinoshi no kankyo inshi no hikaku

    Energy Technology Data Exchange (ETDEWEB)

    Higuchi, T.; Tani, T.; Hirata, Y.; Inasaka, T. [Science University of Tokyo, Tokyo (Japan)

    1997-11-25

    Environmental factors affecting conversion efficiency of solar cells were measured in Tokyo and Nagano to comparatively study the difference. In the study, measurement was made of intensity of global solar radiation on an inclined surface (insolation intensity), ambient air temperature, and distribution of spectral solar radiation at the two points. Also measured were output characteristics of polycrystal silicon solar cell modules and amorphous silicon solar cell modules. The result of the comparative analysis was as follows: The annual inclined global solar radiation amount integrated in 1996 is 27% more in Nagano than in Tokyo. The weighted average insolation intensity in Nagano is 0.09 kW/m{sup 2} higher in Tokyo. The weighted average cell temperature in Nagano is 4degC lower than in Tokyo. The effective spectral ratio in Nagano is 1-2% lower both in polycrystal Si and amorphous Si than in Tokyo. Thus, it was inferred from that environmental factors are different that conversion efficiencies of photovoltaic modules were different. 6 refs., 5 figs., 5 tabs.

  14. Analysis and evaluation for practical application of photovoltaic power generation system. Research and development of elemental technologies for thin-type solar cells; Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Usugata takessho taiyo denchi jitsuyoka no tame no kaiseki hyoka

    Energy Technology Data Exchange (ETDEWEB)

    Sekikawa, T; Shimokawa, R; Yui, N; Takato, H; Takahashi, T; Ishii, K; Suzuki, E; Nagai, K; Kawanami, H; Tanimoto, J; Sakuta, H; Iwata, Y; Saito, N; Koyama, K; Sawada, S [Electrotechnical Laboratory, Tsukuba (Japan)

    1994-12-01

    Described herein are the results of the FY1994 research program for analysis and evaluation for thin substrate polycrystalline solar cells. In order to analyze the structures of the grain boundaries in and interfaces with the cell substrate, and their effects on electrical activity, the photoluminescence (PL) measurement which enables spectroscopic analysis is applied to electromagnetically cast Si crystals. There are good correlations among PL luminous intensity, MBIC output and dislocation density for the grain boundary which contains many strains and serves as the dislocation source, because carriers in such a grain boundary easily disappear to reduce its luminous intensity at the band ends. Concrete scenarios for realizing thin-film silicon solar cells of high efficiency are presented, based on the analysis of the light-contained thin-film silicon solar cells of high output current, made in the previous year on a trial basis. An alumina substrate of high reflectivity is produced by the experiments of combining various devices. It is expected to realize high output current for the thin-film solar cells. 3 figs.

  15. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for extra-high efficiency solar cells (research on new concentrator modules); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Chokokoritsu taiyo denchi no gijutsu kaihatsu no tame no kaiseki hyoka (shingata shuko module)

    Energy Technology Data Exchange (ETDEWEB)

    Tanimoto, J; Sakuta, K; Sawada, S; Yaoita, A [Electrotechnical Laboratory, Tsukuba (Japan)

    1994-12-01

    Described herein are the results of the FY1994 research program for analysis and evaluation of concentrator modules for extra-high efficiency solar cells. The outdoor exposure tests have been under way for 3 years for fluorescent plates, as part of the research program for development of materials and elementary techniques, and essentially no degradation has been observed by the perylene pigment test. Coupling of the fluorescent concentrator and solar cell units is investigated for the coupling position and method, to theoretically analyze geometrical coupling efficiency, where they are coupled at the bottom faces in consideration of easiness of module fabrication. It is demonstrated that a high coupling efficiency can be realized when the cell is sufficiently wide relative to thickness of the fluorescent plate. The coupling method is experimentally examined using transparent silicon gel. A prototype module having the same size as the commercial module (420mm by 960mm) is made on a trial basis, where a total of nine 20mm-thick cells are cut out of a single-crystalline silicon solar cell, 100mm by 100mm in size, and are connected to concentrators at the bottom faces. It shows 2.3 times increased output by the test using a large-area solar simulator. 2 figs.

  16. Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture thin film solar cells, development of technologies to manufacture low-cost large-area modules (dissolution and deposition process); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu (yokai sekishutsuho)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Research and development was performed by noticing on the plasma spraying method as a process that can manufacture thin poly-crystalline silicon films at a high speed. Fiscal 1997 has established a technology that can form a silicon film directly without using seed crystals in an area of 2-cm square on a carbon supported substrate by using a small film manufacturing equipment using the dissolution and deposition process. The size of the crystal is as very large as several hundred {mu}m, by which a possibility of making high-performance solar cells was verified. Discussions were given to apply this technology to large-area substrates, whereas a device was developed, which is capable of forming a film in an area corresponding to 10-cm square. According to a film forming experiment using this device, the film has begun being formed on part of a 10-cm square substrate, verifying the effectiveness of this method. While the film thickness is about 100 {mu}m, it was confirmed that the crystal size will not change even if the thickness is made mechanically as thin as about 50 {mu}m. Further discussions were given on enhancement of wettability by means of coating, and light enclosing structure. (NEDO)

  17. Achievement report for fiscal 1981 Sunshine Program on development of practical application technologies for photovoltaic power systems. Test production and verification of solar panels (Development of polycrystalline substrate process technologies); 1981 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyo denchi panel jikken seisaku kensho (takessho kiban kotei no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-01

    Studies are conducted to enlarge the diameter of polycrystalline Si castings and to develop a low-loss slicing method using silicon nitride powder as mold releasing agent. The apparatus for Czochralski's pulling process is improved and tested using SEG (selective epitaxial growth) Si, and now the casting of a 150mm-diameter ingot is feasible. Also, test production of a 94mm-square wafer as specified by NEDO (New Energy and Industrial Technology Development Organization) is successfully carried out. Difficulties in separating the mold releasing agent from the crucible are solved by changing the Si{sub 3}N{sub 4} power solution from PVA (polyvinyl alcohol) to ethyl silicate. The design, manufacture, and installation of the important parts of the system for the mass production of castings are now complete. The crucible is designed to be movable relative to the heater section, and the molten Si is allowed to cool and solidify from the bottom upward. In relation with the development of low-cost wafer manufacturing technologies, low-loss slicing methods are studied. It is concluded that under the current circumstances a multi-blade saw is more promising than the multi-wire saw in view of the damaged slice rate, processing speed, operating cost, and maintainability. (NEDO)

  18. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and dessolution deposition process); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu (yokai sekishutsuho))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    With an objective to manufacture low-cost large-area solar cell modules, developmental research has been performed on a film manufacturing technology using the dessolution deposition process. This paper summarizes the achievements in fiscal 1999. The research has been performed on a technology to form a thin silicon film directly on carbon substrates being substrates of different kinds, without using seed crystals. The researches made up to the previous fiscal year has made possible to form the film onto a substrate of about 5-cm square, has fabricated cells although with a small area, and indicated the importance of reducing concentrations of impurities in the solvent metals used. The researches performed during the current fiscal year executed modifications to reduce the temperature distribution in the substrate surfaces, including size increase in the heater, and improvement in the cooling heat conduction mechanism. As a result, films were formed successfully on 7.5-cm square substrates. In reducing the process temperatures, it was made clear that films can be formed at lower than 700 degrees C by using zinc as a solvent metal. Furthermore, the purity enhancement in the solvent metal achieved a conversion efficiency of 11.6% although the area is as small as 3.73 cm{sup 2}. (NEDO)

  19. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost large-area module manufacturing technology - Dissolution/deposition method); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (yokai sekishutsuho)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The aim is to manufacture the above at low cost by a dissolution/deposition method. Under this method, a film is fabricated containing crystals high in quality and large in size though the film area is very small. In fiscal 1998, an effort to fabricate a film to cover a 10cm square substrate failed. The failure is explained by that the heater was too small for the substrate area and that the failure to uniformly heat the substrate resulted in an inplane temperature distribution greater than expected. The furnace was modified in a minor way to narrow substrate temperature distribution as much as possible. Another attempt was made to fabricate a larger-area film on a 5cm square substrate, and then crystals grew to cover approximately the whole surface of the 5cm square substrate. Efforts will continue to achieve the goal. As for the mechanism of film fabrication on substrates of different kinds, self-coating is now described by difference in heat conductivity between a carbon substrate and silicon substrate. Thanks to individual control in a small film fabricating unit, a film thickness of approximately 100 micrometers was achieved. The distance of diffusion was 30 micrometers or more in the case of a small area, and the efficiency of a solar cell using this film was found at 10.2%. (NEDO)

  20. Evaluation of PV modules integrated with roofing materials; Kenzai ittaigata taiyo denchi module no hyoka

    Energy Technology Data Exchange (ETDEWEB)

    Morizane, M.; Yagiura, T.; Nakashima, S.; Yagi, H.; Murata, K.; Uchihashi, K.; Tsuda, S.; Nakano, S. [Sanyo Electric Co. Ltd., Osaka (Japan); Ito, M.; Kurimoto, T.; Yamakawa, H.; Fujiwara, T. [Kubota Corp., Osaka (Japan)

    1997-11-25

    PV modules unified with building materials which are low in cost, easy to install and excellent in designing were developed and were evaluated in various tests. As to the basic structure of this module, seamless and unified construction with the back metal plate was adopted considering improvement in fire prevention and cost reduction. About the installation, module is easy to install by just fit connection with the frame, and easy to remove with no use of special tools. Concerning intensity and durability requested for this module, tests on reliability such as torsion strength and wind pressure resistance were conducted according to JIS standards, and it was confirmed that there were no problems. Also on the long-term durability, tests on long-term reliability were carried out by doubling test terms of the temperature/humidity cycle test, salt water resistance test, etc., and the reliability the same as that of the existing type was confirmed. In the verification test using a model house, no changes were seen in electrical characteristics and appearance, and waterproof was also favorable one and a half year after the installation. 4 refs., 7 figs., 5 tabs.

  1. To the partnership in Kanegafuchi Chemical Industry and solar cell; Kaneka, taiyo denchi de teikei he

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-07-01

    Kanegafuchi Chemical Ind. clarified that the consultation was advanced in the direction in which the business cooperates with BP Amoco Corp. in international oil majors on the solar cell business on 11 th capital. In full amount fund subsidiary of the bell pool chemistry, the solar cell making and selling company is established in the joint venture in Europe and America, Asia, when the BP Amoco Corp. does capital participation in money mosquito solar tech which is the production marketer of solar cell. The plan which develops the amorphous solar cell of low cost which the bell pool chemistry developed in the world. The consultation of the partnership is also arranging prospect in the end June, and it seems to greatly jump by uniting with the BP Amoco Corp. of the largest hand. (translated by NEDO)

  2. PV glass curtain walls; Kenzai ittaigata taiyo denchi gaiheki no kaihatsu (glass curtain wall eno tekiyo)

    Energy Technology Data Exchange (ETDEWEB)

    Yoshida, T.; Iwai, T.; Ouchi, T.; Ito, T.; Nagai, T.; Shu, I. [Kajima Corp., Tokyo (Japan); Arai, T. [Showa Shell Sekiyu K.K., Tokyo (Japan); Ishikawa, N.; Tazawa, K.

    1997-12-20

    Reported in this article are PV (photovoltaic) modules now under development for integration into building walls. First of all, the power generating capability of PV modules and appropriate use of the generated power are studied, and the performance (resistance to fire or incombustibility, strength and durability, appearance and design, and dimensional standardization) that such outer wall materials are to be equipped with are determined. Next, module development, installation technique, computer graphics-aided facade designing, and real size module-using proof test are studied before installability, the power to be generated, and designs are finalized. In the development of modules, design evaluation involves the combining of various kinds of glass, solar cells, back sheets, and fillers, and the importance is confirmed of the prevention of insulation degradation around the modules. As for the methods of installation, the gasket method and aluminum sash method, etc., are tested. In the study of facade design, it is found that various expressions are possible by properly choosing gasket colors, module types, and kinds of glass to cover the openings. 1 ref., 6 figs., 3 tabs.

  3. Achievement Report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Development of silicon mass-production manufacturing technology for solar cells; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    In order to manufacture silicon for solar cells, development is intended on a technology to manufacture silicon (SOG-Si) for solar cells by means of metallurgical methods using metallic silicon with purity generally available as an interim starting material. The silicon is required of p-type electric conductivity characteristics with specific resistance of 0.5 to 1.5 ohm per cm, to be sufficient even with 6-7N as compared to silicon for semiconductors (11-N), and to be low in cost. While the NEDO fluid bed process and the metallurgical NEDO direct reduction process have been developed based on the technology to manufacture silicon for semiconductors, the basic policy was established to develop a new manufacturing method using commercially available high-purity metallic silicon as an interim starting material, with an objective to achieve cost as low as capable of responding to small-quantity phase production for proliferation purpose. Removal of boron and phosphor has been the main issue in the development, whereas SOG-Si was manufactured in a laboratory scale by combining with the conventional component technologies in fiscal 1991 and 1992. The scale was expanded to 20 kg since fiscal 1993, and a five year plan starting fiscal 1996 was decided to develop the technology for industrial scale. Fiscal 1997 has promoted the development by using the 20-kg scale device, and introduced facilities to develop technology for mass-production scale. (NEDO)

  4. Fiscal 2000 achievement report. Research and development of fast-acting innovative energy-environment technology (Development of fast-acting high-efficiency solar cell technology - Development of high-quality ingot manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko itaku kenkyu gyomu seika hokokusho. Sokkoteki kakushinteki energy kankyo gijutsu kenkyu kaihatsu (Sokkogata kokoritsu taiyo denchi gijutsu kaihatsu - Kohinshitsu ingot seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Research and development was conducted of a technology for manufacturing an ultrathin polycrystalline silicon solar cell capable of efficiency enhancement and cost reduction earlier than the types of polycrystalline solar cells now available on the market. In this fiscal year, a silicon melt/solidification experimenting apparatus was built for manufacturing high-quality silicon ingots. Using an apparatus with its performance similar to the newly built one, a preliminary experiment was conducted involving high-purity silicon ingot manufacturing. In the experiment, boron was added to 75 kg of silicon for semiconductor devices so that its resistivity may be 0.5 ohm-cm. The silicon was melted in a quartz mold, and then subjected to unidirectional coagulation at 0.13 mm/min that started at the bottom to proceed upward. The result was a silicon ingot 44 cm times 44 cm times 17 cm (height). The ingot thus obtained exhibited 0.4-0.8 ohm-cm in resistivity distribution. Solar cells produced from the ingot showed a conversion rate of 16.9%. (NEDO)

  5. Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system/development of technology to manufacture thin film solar cells (development of technology to manufacture materials and substrates (development of technology to manufacture high-quality amorphous materials and substrates)); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, zairyo kiban seizo gijutsu kaihatsu (kohinshitsu amorphous kei zairyo kiban no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    These technological developments are intended to develop technologies to manufacture with improved quality the silicon-based thin film solar cells. In order to analyze manufacturing conditions for micro crystal silicon thin films as the narrow-gap amorphous silicon-based films, films were manufactured in the vicinity of borders of amorphous/micro crystal silicon film manufacturing conditions. The present film manufacturing did not present effects of suppressing deterioration of hydrogen diluted light. In order to elucidate the light deterioration mechanism in hydrogenated amorphous silicon films and study the suppression thereof, discussions were given on impurities in the film, including oxygen. By using an ultra high vacuum plasma CVD having a thoroughgoing baking system, an oil-free exhaust mechanism, and a raw material gas refining mechanism, impurities were added to and removed from a reaction vessel, and an ultra-high purity Si:H film was manufactured, which has been removed of impurities from the raw material gas, resulting in reduction of O, C and N standing no comparison. According to the result of a light irradiation experiment on an ultra-high purity film obtained under an accelerated deteriorating condition by using a pulse laser, the model assuming the light induced defect and the pair of impure atoms has been denied. (NEDO)

  6. Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research on amorphous silicon defect density); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (Amorphous silicon no kekkan mitsudo no kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-01

    So as to determine the energy distribution of defect level density in a-Si, which is indispensable for an optimum solar cell design, the hitherto unclear theoretical relationship between the field effect method and MOS (metal oxide semiconductor) capacity method is made clear, and a unified theory is newly established. A high-speed totally automatic evaluation system is developed, capable of high-accuracy determination of defect levels. For the realization of an a-Si MOS structure required for fulfilling the above purpose, a-Si is grown and then diborane and ammonia are subjected to a glow discharge decomposition process for the formation of a new insulation film. It is found that the material may be utilized for MOS structure construction for defect density evaluation. Studies are conducted on plasma emission spectroscopy and infrared absorption analysis for the elucidation of growth mechanism for the growth of high-quality a-Si. Key radicals in plasma that govern film growth are investigated. It is disclosed that excited hydrogen in plasma plays an important part in microcrystalline phase deposition. It is also disclosed that hydrogenation greatly improves on CVD (chemical vapor deposition) a-Si doping efficiency. (NEDO)

  7. Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of amorphous solar cells (Research on amorphous silicon interface); 1984 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Amorphous silicon no kaimen no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1985-03-01

    As for the formation of amorphous semiconductors by photo-CVD (chemical vapor deposition) processes, details are examined of a-Si formed by the excimer laser-excited photo-CVD process, a-SiC formed by the directly excited photo-CVD process, a-SiGe formed by the mercury sensitized reaction photo-CVD process, and {mu}c-Si formed by the mercury-sensitized reaction photo-CVD process. It is then found that all of the said materials are superior to a product of the plasma CVD process in terms of film quality. As for the fabrication of amorphous Si solar cells by a photo-CVD process, a 3-separate-chamber unit is built, in which all the p-, I-, and n-layer are formed by photo-CVD. It is then found that the introduction of a buffer layer into the p/I interface is a powerful tool to enhance efficiency and that the use of the buffer zone brings about an increase of 9% or more in conversion efficiency. In the case of an amorphous solar cell using monosilane, buffer layer introduction results in a conversion efficiency of 9.05%. (NEDO)

  8. Achievement report for fiscal 1981 on Sunshine Program research and development. Research and development of amorphous solar cells (Research on amorphous silicon-based new materials); 1981 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Amorphous silicon kei shinzairyo no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-01

    In an a-Si{sub 1-x}Ge{sub x}:H film formed by decomposition in a glow discharge, since Ge-H is weaker than Si-H in terms of bonding, an increase in the amount of Ge decreases the amount of H and increases the number of Ge dangling bonds (DBs). Actually, however, H bonded to Si also decreases the number of DBs in Ge. This suggests that H is not working only to terminate DBs but that it also decreases the number of DBs through its structure-softening effect. In the case of a-Si{sub 1-x}C{sub x}:H, an increase in C results in an increase in H and in the number of DBs in both Si and C, this because C-H is stronger than Si-H in terms of bonding. F in a film is quite mobile. SiF and SiH in presence as distributed are found to decrease the number of DBs. Concerning the effect of hydrogen plasma processing for a-Si formed by thermolysis (CVD: chemical vapor deposition), the light transmission rate, absorption, ESR (electro-spin resonance) process time, and dependency on film thickness are investigated, and the relationship is examined between the defect-reducing effect of the H taken into the film and the transmission of light. It is found, as the result of experiments by a simplified molecular orbital method, that DBs stay in existence keeping away from where H or F is in presence. (NEDO)

  9. Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of photovoltaic power system (Research and development of amorphous solar cells - Research on defect density in amorphous silicon); 1984 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (amorphous silicon no kekkan mitsudo no kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1985-03-01

    For the development of high-efficiency, large-area, long-life, and low-cost solar cells, research is conducted on new methods of film formation and defect evaluation. Concerning the kinetics of Si thin film, a radical beam deposition method is proposed as a new low-temperature thin film growth method. Using the new method, a {mu}c-Si film is manufactured, through only a purely radical substrate surface reaction of chemically active, electrically neutral excited species. In research on the amorphous semiconductor superlattice, a new study is conducted on a multilayer, cyclic-structure superlattice consisting of thin films of a-Si:H and a-Si{sub 1-x}N{sub x}:H. In the research on an a-Si:H film formed by the direct photo-CVD (chemical vapor deposition) of disilane, the unit is improved and B and P are successfully doped by means of decompressed photo-CVD. In the evaluation of new materials for solar cells, research is conducted on the after-annealing characteristics of a-Si:H grown at a high speed, electrical characteristics of post-hydrogenated low boron-doped CVD a-Si, and microcrystalline SiGe alloys made by the spattering plasma CVD method. (NEDO)

  10. Report on achievements in fiscal 1999. Development of energy usage rationalizing silicon manufacturing process (Development of manufacturing technology for mass production of silicon for solar cells); 1999 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Discussions were given on manufacture of raw material silicon for solar cells with regard to boron removal, solidification, finishing and refining of metallic impurities, refining of unutilized silicon scraps, and making them into wafers and solar cells after refining. This paper summarizes the achievements in fiscal 1999. With regard to purity deterioration due to contamination by boron containing silica powder generated during the boron removal in the manufacturing process, the facilities were modified resulting in the reduction thereof to 0.04 ppmw or less. Regarding the repetitive use of boron removing crucibles, the experiment identified the possibility of using them for more than three times. In trial fabrication of samples by using the solidification refining and cast integrated process, ingots of 550 mm square and about 300 mm high were obtained, which were sliced into 10-cm square materials for use as wafers. Measurement of the conversion efficiency has resulted in 13% or more which is almost equivalent in the center and edges of the ingot. It was revealed that solar cell wafers may be fabricated by using this process, which can use either the p-type low-resistance silicon scraps or the metallic silicon as the starting material. (NEDO)

  11. Report on achievements in fiscal 1998. Development of silicon manufacturing process to rationalize energy usage (Development of mass production technology for solar-grade silicon); 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    In the proliferation stage of solar cells, a technology is required to manufacture low-cost SOG-Si that can handle small quantity production. Development is being made on a manufacturing technology using high purity metallic silicon (99.5%) as the raw material. Considering that the subject impurities are P, B and metallic impurities (Fe, Ti and Al), a manufacturing method consisting of the following processes is being developed: metallic silicon/phosphorus removal, solidification and rough refining/boron removal, solidification and fine refining. Discussions are being advanced on phosphorus removal by using a large electron beam fusion equipment, and at the same time, the discussions are supported by fabricating and installing a large equipment intended of removing boron and the metallic impurities. Boron is removed by oxidizing it with steam. Therefore, the basic mechanism of the equipment is to spray argon plasma added with steam onto the molten silicon surface. In boron removal, diffusion of boron onto the reaction interface in the primary reaction determines the rate. A boron removal rate for B/10 to 0.1 ppm of 45 kg/h as maximum was achieved. The derived silicon has met the requirement. (NEDO)

  12. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for thin substrate polycrystalline solar cells (alloy-base amorphous materials, PIN layers, strains in the interface, and effects of impurities); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Usumaku taiyo denchi jitsuyoka no tame no kaiseki hyoka (gokinkei amorphous zairyo pin kakuso kaimen ni okeru yugami fujunbutsu nado no eikyo)

    Energy Technology Data Exchange (ETDEWEB)

    Matsuda, A; Oeda, H; Yamasaki, S; Hata, N; Kondo, M; Toshima, Y; Sakata, I; Ganguly, G; Suzuki, A; Kamei, T; Okushi, H; Nonaka, H; Oda, N; Katagiri, H; Ichimura, N; Kokubu, K; Nakamura, K; Sekikawa, T; Yamanaka, M [Electrotechnical Laboratory, Tsukuba (Japan)

    1994-12-01

    Described herein are the results of the FY1994 research program for analysis and evaluation for thin film solar cells. The study on quantitative analysis of hydrogen atoms in a plasma determines quantity of hydrogen atoms in the plasma of monosilane diluted with hydrogen. It is found, contrary to expectation, that quantity of hydrogen atoms in the plasma decreases as it is more diluted with hydrogen. The study on light-induced degradation of the thin chlorine-base amorphous silicon films confirms that the plasma CVD method with 20% of dichlorosilane gas added to monosilane gas produces the thin amorphous silicon film 3 times faster than the conventional method. The thin film has essentially the same defect density as the one prepared by the conventional method, showing good photoelectric characteristics. The thin film of chlorinated amorphous silicon has a 1 digit lower defect density than the conventional one of amorphous silicon, as revealed by the accelerated degradation test with irradiated laser light and the constant current method to determine saturated defect density. 3 figs.

  13. FY 1999 research and development of technologies for commercialization of photovoltaic power generation systems. Development of technologies for fabrication of thin-film solar cells/materials and substrates (Development of technologies for fabrication of high-quality amorphous materials and substrates); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / zairyo kiban seizo gijutsu kaihatsu (kohinshitsu amorphous kei zairyo kiban no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The research and development project is implemented for the amorphous/microcrystalline solar cells with the thin microcrystalline silicon film as the i layer, and the FY 1999 results are reported. The fabrication technologies are investigated for the microcrystalline silicon solar cells of pin or nip structure by RF or VHF plasma CVD using SiH{sub 4} and H{sub 2} as the stock gases. The tests are conducted for evaluating characteristics of the thin microcrystalline silicon film, to investigate the effects of film-making pressure, power and hydrogen dilution rate on the characteristics at a constant film-making temperature of 180 degrees C. The researches on the fabrication technologies for the microcrystalline solar cell of pin structure confirm that use of VHF plasma CVD improves crystallinity, electrical and optical characteristics of the p-type thin microcrystalline silicon film. The researches on the fabrication technologies for the microcrystalline solar cell of nip structure covers transparent substrates, film-making speed of the p layer, power and substrates, and a conversion efficiency of 7.5% is realized by the solar cell formed on a texture substrate. (NEDO)

  14. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Volume 1. Development of thin film solar cell manufacturing technologies (Development of technologies to manufacture low-cost large-area modules and survey and research on analyzing how to put products into practical use); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu kaihatsu (jitsuyoka kaiseki ni kansuru chosa kenkyu 1))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    With an objective to assist research and development to put thin film solar cells for power use into practical use and a research to put thin film solar cell manufacturing technologies into practical use, survey and research have been performed on trends in the technologies inside and outside the country. Characteristic points in thin film solar cells during the current fiscal year include: expansion of production scale of amorphous silicon solar cells, rapid progress in poly-crystalline silicon thin film solar cell technologies, and enhancement of performance in large-area modules in the a-Si, CIGS, and CdTe systems. In the trends in research and development of amorphous systems, expectation is heightening on elucidation of optical deterioration phenomena, and establishment of suppression technologies thereof. Although the highest efficiency was not renewed in thin film solar cells of small areas, progress was seen in the post-stabilization efficiency in large-area modules. A thin film solar cell manufacturing plant having an annual production capacity of 20 MW was put into operation in October in Japan. Micro (poly) crystalline silicon based solar cells have high possibility of being compatible in cost reduction and performance improvement, and energetic researches are being carried out on them in recent years as the most promising candidate of the next generation solar cells. (NEDO)

  15. Report on achievements in fiscal 1999 on research and development of immediately effective and innovative energy environment technology. Part 1. Development of immediately effective and high-efficiency solar cells, and development of technology to slice and manufacture thin-type large-area polycrystalline substrates; 1999 nendo sokkoteki kakushinteki energy kankyo gijutsu kenkyu kaihatsu seika hokokusho. Sokkogata kokoritsu taiyo denchi gijutsu kaihatsu (usugata daimenseki takessho kiban slice seizo gijutsu kaihatsu 1)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    With an objective of decreasing silicon usage quantity for the purpose of reducing the solar cell production cost, development is being performed on an ingot cutting technology to cut a silicon ingot to Kerf loss of 150 {mu} m and thickness of 150 {mu} m, and in which the produced wafers can withstand the cell making. Investigations revealed that a wire saw is suitable as the cutting system, and the wire used must have a diameter of less than 120 {mu} m, and a strength of more than 3850 N/mm{sup 2}. A prototype wire was fabricated, whose diameter is 120 {mu} m, and in which the strength is distributed between 3870 and 4110 N/mm{sup 2}. It was found possible that a wire of 160 {mu} m can be used to slice an ingot having a cross section surface of 150 mm square and a length of 300 mm into a slice having a Kerf loss of 200 {mu} m and a thickness of 180 {mu} m. This wafer had the in-plane distribution of the substrate thickness at {+-} 12.5 {mu}, swell of 120 {mu} at maximum, and surface roughness of 5 {mu}. Making ten of these wafers into a cell resulted in a yield of 60%. Assignments are the clarification of the properties of the cutting wire, the preparation of a thin wire with homogeneous quality, and the establishment of a technology to cut Kerf loss of 150 {mu} and substrate thickness of 150 {mu}. (NEDO)

  16. New Sunshine Program for fiscal 2000. Development of photovoltaic system commercialization technology - Development of thin-film solar cell manufacturing technology - Development of low-cost/large area module manufacturing technology (Development of novel amorphous solar cell module manufacturing technology); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Shingata amorufasu taiyo denchi mojuru no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Research and development was conducted for the development of amorphous solar cell modules for power generation, high in performance and low in production cost. In the effort to improve cell efficiency, experiments were conducted for enhancing bottom a-SiGe cell efficiency for the embodiment of an enhanced-efficiency multi-junction cell, for improving crystallinity in microcrystalline silicon through the application of VHF (very high frequency) plasma CVD (chemical vapor deposition), for texturizing metal electrodes on a film substrate, and so forth. In the effort to increase the film fabrication rate, a VHF plasma CVD device was used for studying the effect of the discharge frequency on film deposition and quality, Vpp between the electrodes, and so forth. Studies about the high-throughput production technology centered on the film substrate solar cell process technology and the designing of an optimum geometrical pattern for SCAF (series-connection through apertures formed on film) cells. Production cost was estimated for the SCAF structure film substrate solar cell manufacturing process, and a production cost of 147.1 yen/W (in case of 100 MW/year production) was obtained as achievable under the currently available conditions. (NEDO)

  17. Fiscal 1999 research and development of technologies for practical application of photovoltaic power generation systems. Research and development of photovoltaic power utilizing system and peripheral technologies (Research and development for enhancing reliability of photovoltaic power generation - Research on environmental measures for compound solar cell modules); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyoko hatsuden riyo system shuhen gijutsu no kenkyu kaihatsu (taiyoko hatsuden no shinraisei kojo ni kansuru kenkyu kaihatsu - kagobutsu taiyo denchi module no kankyo taisaku no chosa kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Research is conducted to properly deal with environmental problems, such as compromised solar cell safety, which may follow the mass introduction and diffusion of photovoltaic power systems. In the research of fiscal 1999 on technical literature on environmental measures against lead and animal tests, a need was found to reduce lead in power systems and to grasp lead elution characteristics for the establishment of environmental measures. In a safety test conducted for thin-film CIS (copper indium diselenide) based solar cells, basic data were collected about the vaporization rate of Se, the effect of moisture on the Se vaporization rate, etc. Basic data were also collected about the relationship between the combustion temperature and the amount of scattered lead in particular from the solder used as the conducting material in silicon based solar cells. In the evaluation of the environmental impact of thin-film CIS solar cells in case of fire, it was found that Se concentration below 10-20m in the plume was near the permissible concentration of 0.1mg/m{sup 3} as recommended by Japan Society for Occupational Health and that the concentration levels predicted for the periphery were two orders of magnitude smaller than the mandatory level. (NEDO)

  18. Report on achievements in fiscal 1999. Research and development of immediately effective and innovative energy environment technology (Development of immediately effective and high-efficiency solar cell technology, development of high-quality ingot manufacturing technology, and development of high-efficiency cell making technology); 1999 nendo sokkoteki kakushinteki energy kankyo gijutsu kenkyu kaihatsu seika hokokusho. Sokkogata kokoritsu taiyo denchi gijutsu kaihatsu (kohinshitsu ingot seizo gijutsu kaihatsu / kohinshitsu cell ka gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Research and development has been made on improving quality of ingots for substrates, manufacturing high-quality thin type substrates, and making high-efficiency cells. This paper summarizes the achievements in fiscal 1999. In developing the high-quality ingot manufacturing technology, discussions were given on a method for assessing impurities and crystal defects by using the total reflection scattering type infrared tomography, and on the optimal solidifying and cooling conditions during the ingot manufacturing by using simulation calculation for solidification. As a result of analyses and discussions, such findings were found effective that the ingot should be solidified through making the solid-liquid interface shape flat, and the temperature falling rate in an ingot should be maintained constant. In developing the high-efficiency cell making technology, discussions were given on the optimal construction based on a simulation that assumes the light sealing structure using the RIE method, and on the optimal construction of polycrystalline silicon solar cells by using a device simulator (PCID). The important factors in achieving a conversion efficiency of 20% are the light sealing structure, surface passivation, and substrate thickness. (NEDO)

  19. Influence of angle of inclination on power of solar module; Taiyo denchi module no keisha kakudo to shutsuryoku tokusei

    Energy Technology Data Exchange (ETDEWEB)

    Tsutsumi, K.; Nishitani, M. [Dai Ichi University, College of Technology, Kagoshima (Japan)

    1997-11-25

    Experiment/study were conducted on the influence of angle of inclination on output of solar modules. In the experiment, changing the angle of inclination of the photovoltaic module installed on the top of school building to 0, 30, 60 and 90 degC, the global radiation on an inclined surface was measured by pyranometer equipped with the module, and at the same time output characteristics were measured by I-V curve tracer. In the I-V curve tracer, voltage, current, and output capability diagram are illustrated automatically changing bias voltage to get the maximum output. The global radiation on an inclined surface and the maximum output indicated an almost proportional relation and were expressed in a recursion method. Moreover, measurement of the global radiation is usually conducted using the amount of global radiation on a horizontal surface, and the global radiation on an inclined surface is calculated as a sum of the direct solar radiation amount and the sky solar radiation amount after determining a penetration rate by the relational equation. By calculating the global radiation on an inclined surface, it becomes possible to calculate the maximum output of photovoltaic modules by this recursion method. 1 ref., 6 figs., 1 tab.

  20. Influence of spectral solar radiation to the generating power of photovoltaic module; Taiyo denchi shutsuryoku eno taiyoko supekutoru eno eikyo

    Energy Technology Data Exchange (ETDEWEB)

    Minaki, S.; Ishihara, Y.; Todaka, T.; Harada, K. [Doshisha University, Kyoto (Japan); Oshiro, T.; Nakamura, H. [Japan quality Assurance Organization, Tokyo (Japan)

    1997-11-25

    As to the influence of spectral solar radiation to generating power of solar cells, a study was conducted from the aspects of season, time zone, intensity of solar radiation, etc. In the study, spectral responsive variation correction coefficients were introduced as evaluation values expressing the influence of spectral solar radiation. For the spectral distribution, an all sky spectral pyranometer by wavelength was used, and data were used which were obtained in the measurement in experimental facilities of the solar techno center. Concerning solar cell relative spectral sensitivity values, used were relative spectral sensitivity values of monocrystal and amorphous standard solar cells to the short-circuit current. Spectral response variation correction coefficients are coefficients correcting variations in conversion efficiency of solar cells due to changes in the spectral distribution. The changes of spectral responsive variation correction coefficients were studied using data obtained during April 1994 and March 1996. As a result, it was found that the coefficients showed large changes in summer and small ones in winter and that amorphous solar cells indicate this trend conspicuously. 3 refs., 6 figs., 3 tabs.

  1. Estimation of the charge quantity from solar cell to battery; Taiyo denchi ni yoru chikudenchi eno juden yosoku

    Energy Technology Data Exchange (ETDEWEB)

    Tsutsumi, K; Nishitani, M [Daiichi University, College of Technology, Kagoshima (Japan)

    1996-10-27

    In performing an experiment of running a small electric vehicle by installing solar cells in it and by charging the storage battery at a specific voltage, an estimation was made on the charge quantity to the battery for each solar altitude and inclination of a module at different hours. The solar altitude was determined at Daiichi University, College of Technology, according to the month and the time of day from a formula using day-declination and time equation of a chronological table of science. The quantity of global solar radiation was determined by resolving the solar radiation into its direct and diffuse components on the basis of the extra-terrestrial solar radiation quantity with the change in radius vector taken into consideration; and then, the global solar radiation on the inclined face was obtained from the angle of inclination and incidence. On the roof of a Daiichi University building, solar cell modules were installed facing north and south at 0{degree}, 30{degree}, 45{degree}, 60{degree} and 90{degree} each, so that a short-circuit current was measured for each differently inclined angle. As a result of the experiment, shown in an regression formula is a relation between the temperature conversion value of the maximum output of the solar cell at the standard temperature of 25{degree}C and the quantity of solar radiation on the inclined surface. Consequently, it enabled the prediction of a charging quantity, in the case of running a small vehicle with solar cells installed, from the quantity of solar radiation on the inclined surface in the clear weather. 2 refs., 4 figs., 2 tabs.

  2. Forced-circulation solar water heater using a solar battery; Taiyo denchi wo mochiita kyosei junkahshiki taiyonetsu onsuiki

    Energy Technology Data Exchange (ETDEWEB)

    Asai, S; Mizuno, T [Yazaki Corp., Tokyo (Japan)

    1997-11-25

    Optimal operation control was discussed on a forced-circulation solar water heater using solar cells not only as the power supply of a heat collecting pump, but also for controlling operation of the heat collecting pump. With this system, when the amount of power generated by solar cells reaches a sufficient level for operating the heat collecting pump, the heat collecting pump starts operation, wherein the heat collecting medium circulates in the system. The discussion was given by using simulation based on experimental expressions such as the relation expression between insolation and heat collecting medium flow rate as derived from the result of the system`s heat collecting performance test. As a result, the following conclusions were obtained: optimal insolation for activating the discussed system is from 50 to 100 W/m {sup 2}, and the heat collected within this range is within -1.5% of the collected heat amount at an optimum value; optimal activating insolation for the case of 1000 to 2000 W/m {sup 2} with low daily cumulative insolation is from 0 to 50 W/m {sup 2}, whereas the optimal activating insolation amount increases as the daily cumulative insolation amount increases; and the optimal activating insolation amount increases as water to be supplied requires higher temperature. 1 ref., 17 figs., 2 tabs.

  3. Forced-circulation solar water heater using a solar battery; Taiyo denchi wo mochiita kyosei junkanshiki taiyonetsu onsuiki

    Energy Technology Data Exchange (ETDEWEB)

    Asai, S; Mizuno, T [Yazaki Resources Co. Ltd., Shizuoka (Japan)

    1996-10-27

    For the purpose of satisfying demands for qualitative improvement on tapwater temperature and pressure, an indirect-type solar water heater using solar cells, in which a closed type hot water storage tank connected directly to the water supply is integrated with a solar collector, was examined for its characteristics and performance. The heat collecting medium is a water solution of polypropylene glycol, which circulates through the solar collector pump, cistern, solar collector, and heat exchanger (hot water storage tank). The results of the test are summarized below. When comparison is made between the two solar collector pump control methods, the solar cells direct connection method and the differential thermo method utilizing temperature difference between the solar collector and the hot water storage tank, they are alike in collecting heat on clear days, but on cloudy days the latter collects 5% more than the former. In winter, when the heat exchanger heat transfer area is 0.4m{sup 2} large, a further increase in the area improves but a little the heat collecting efficiency. An increase in the medium flow rate and temperature, or in the Reynolds number, enhances the heat collecting efficiency. 13 figs., 6 tabs.

  4. Technological development for super-high efficiency solar cells. Technological development for crystalline compound solar cells (high-efficiency III-V tandem solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Kessho kagobutsu taiyo denchi no gijutsu kaihatsu (III-V zoku kagobutsu handotai taiyo denchi no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development of III-V compound semiconductor solar cells in fiscal 1994. (1) On development of epitaxial growth technology of lattice mismatching systems, the optimum structure of InGaAs strain intermediate layers was studied for reducing a dislocation density by lattice mismatching of GaAs layer grown on Si substrate and difference in thermal expansion coefficient. The effect of strain layer on dislocation reduction was found only at 250dyne/cm in strain energy. Growth of GaAs layers on the Si substrate treated by hydrofluoric acid at low temperature was attempted by MBE method. As a dislocation distribution was controlled by laying different atoms at hetero-interface, the dislocation density of growing layer surfaces decreased by concentration of dislocation at hetero-interface. (2) On development of high-efficiency tandem cell structure, tunnel junction characteristics, cell formation process and optimum design method of lattice matching tandem cells were studied, while thin film cell formation was basically studied for lattice mismatching tandem cells. 45 figs., 8 tabs.

  5. Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of high-quality amorphous silicon film formation technologies using plasma separation); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (plasma bunri ni yoru kohinshitsu amorphous silicon maku seimaku gijutsu no kenkyu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-01

    When discharge plasma is applied for film formation, ions affect the quality of the resultant film. In the case of plasma CVD (chemical vapor deposition) method, there exists correspondence between the radicals ratio SiH/H and solar cell conversion efficiency, and plasma measurement may be used for the control of film formation conditions. The state of distribution of radicals in discharge plasma is dependent on the type of radicals, and there is an optimum substrate position. Photoelectric characteristics are improved when a grid electrode is used for plasma separation. The surface of a transparent conductive film (ITO: indium-tin oxide) to be the substrate for film formation needs to be flat, and part of its Si is oxidized into SiO{sub 2} by generated oxygen. An ITO film coated by chemically stable SnO{sub 2} is useful. When the ion plating method is employed, film formation conditions are first selected, and then, in a heat treatment to follow, resistance films of various surface conditions are obtained. Carbon-added a-Si film formation conditions and the relationship between film qualities and solar cell characteristics are elucidated. In a solar cell of the p-i-n structure with an a-Si:C:H film acting as the p-layer, a conversion efficiency of 7.6% is achieved. (NEDO)

  6. Fiscal 1999 research and development of technologies for practical application of photovoltaic power generation systems. Development of thin-film solar cell manufacturing technology (Development of material/substrate manufacturing technology - Development of amorphous silicon-based high-quality material/substrate manufacturing technology); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (zairyo kiban seizo gijutsu kaihatsu - amorphous silicon kei kohinshitsu zairyo kiban no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The project aims to enhance the stability of amorphous solar cells. For elevating TCO (transparent conductive oxide) substrate transmittance to an ultrahigh level and for obtaining amorphous layers less to suffer photodegradation, efforts were made to develop substrate materials stable upon exposure to plasma and low in defect density. In the study of TCO, a high-transmittance glass substrate was employed and TCO was made thinner, and the specimen achieved transmittance of 91.3% or 6.3% over that of the conventional type. In the study of low reflection films, it was found that their transmittance came to be stable and remain so after 150 days after a weatherproof test. In the study for stability enhancement, optimization was carried out for a plasma resisting Ga{sub 2}O{sub 3}-added ZnO film for the manufacture of a substrate material capable of properly behaving in a high-speed a-Si film fabrication process. Low-temperature film fabrication was studied to enable low-cost manufacturing, and it was learned that a 4 times 10{sup -4} ohm/cm low-resistance film was obtained by sputtering Ga{sub 2}O{sub 3}-added ZnO where magnetism was intensive at room temperature, that films excellent in crystallinity were obtained by the same method even at low temperatures, and so forth. (NEDO)

  7. Technological development for super-high efficiency solar cells. Technological development for crystalline compound solar cells (research and development of composite materials on solar cells under microgravity environment); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Kessho kagobutsu taiyo denchi no gijutsu kaihatsu (bisho juryoku kankyo wo riyoshita taiyo denchiyo zairyo kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on development of composite materials for solar cells under microgravity environment in fiscal 1994. (1) On a thin film capillary method, 26 experiments of GaSb thin film crystal growth were conducted using the especially prepared high-accuracy electric furnace under microgravity. The wettability of thin film crystals was improved by refining equipment. Rhombus crystal planes and large crystal grains were observed in GaSb thin film crystals prepared under microgravity. (2) On a liquid phase method, the effect of the gravity on crystal structure and grain morphology was studied for synthesis of CdS fine grains. (3) On technological development of composite materials, the solidification experiment of Cu-In-Se melt was conducted under short time microgravity of 10{sup -4}g for 10 sec. As a result, more uniform texture and more high crystallinity were obtained under microgravity, and In in melt was concentrated by surface tension effect. It was suggested that high-quality CIS thin films will be obtained by Se doping into Cu-In composite films under microgravity environment.

  8. Becoming a Lunari or Taiyo expert: learned attention to parts drives holistic processing of faces.

    Science.gov (United States)

    Chua, Kao-Wei; Richler, Jennifer J; Gauthier, Isabel

    2014-06-01

    Faces are processed holistically, but the locus of holistic processing remains unclear. We created two novel races of faces (Lunaris and Taiyos) to study how experience with face parts influences holistic processing. In Experiment 1, subjects individuated Lunaris wherein the top, bottom, or both face halves contained diagnostic information. Subjects who learned to attend to face parts exhibited no holistic processing. This suggests that individuation only leads to holistic processing when the whole face is attended. In Experiment 2, subjects individuated both Lunaris and Taiyos, with diagnostic information in complementary face halves of the two races. Holistic processing was measured with composites made of either diagnostic or nondiagnostic face parts. Holistic processing was only observed for composites made from diagnostic face parts, demonstrating that holistic processing can occur for diagnostic face parts that were never seen together. These results suggest that holistic processing is an expression of learned attention to diagnostic face parts. PsycINFO Database Record (c) 2014 APA, all rights reserved.

  9. On the fluctuations of density and temperature in outer space atmosphere obtained from orbital shift of TAIYO

    International Nuclear Information System (INIS)

    Kato, Yoshio; Onishi, Nobuto; Shimizu, Osamu; Enmi, Sachiko; Hirao, Kunio.

    1976-01-01

    The temperature and density in outer space atmosphere were obtained from the change of the orbital period of the artificial satellite TAIYO which was launched on February 24, 1975, from Kagoshima. An equation to calculate atmospheric density with the characteristic values of the satellite is presented in the first part together with the observed variation of the orbital elements of TAIYO. The weekly changes of temperature and density in outer space atmosphere at the altitude of 250 km, which is the perigee of the satellite, from April 1975 to May 1976 were obtained. The relations between outer space temperature and sigma KP, F10.7, and the position of the perigee were also obtained. The outer space temperature as a function of local time is presented, and it is observed that the temperature change in relation to the local time agrees with the atmospheric model, and that the ratio of maximum or minimum temperature within a day becomes nearly 1.3. It is commented that more data will be available for the further detailed analysis because TAIYO is still orbiting normally. (Aoki, K.)

  10. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of application type novel-structure thin-film solar cell manufacturing technology - Development of static micro-concentrator solar cell manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (micro shukogata taiyo denchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    An acorn type concentrator is a 2-dimensional system and realizes relatively high magnification power, but it requires a special assembly process for modularization because the cells and the concentration system are quite small. Under the circumstances, studies are conducted on a prism array concentrator (PAC) which will demand a smaller burden for modularization. A PAC system is basically a 1-dimensional concentrator in terms of light collection performance. The cell to be attached to one plane in the longitudinal direction of the long triangular prism is so small as 5mm in width, yet it may be as long as 50-100mm, and the conventional flat plate assembly process may be made use of. A concentration efficiency of 82% and a conversion efficiency of 10.9% were obtained from a minimodule with a light intercepting area of 5cm times 4cm. Furthermore, a conversion efficiency of 19.7-21.4% was obtained when a small 5mm-wide cell applicable to a PAC type concentration was used. Since a prism type concentrator optical system will cost much for its molding and strengthening when it is built of glass, inexpensive EVA (ethylene-vinyl acetate copolymer) was utilized as an adhesive filler. (NEDO)

  11. Study on the best utilization of solar energy. Experimental study of hydrogen generation by water electrolysis using solar battery; Taiyo energy no yuko riyo ni kansuru kenkyu. Taiyo denchi riyosui denki bunkai suiso hassei field test

    Energy Technology Data Exchange (ETDEWEB)

    Kawashima, Y; Murai, K; Nakai, T [Himeji Institute of Technology, Hyogo (Japan)

    1997-11-25

    Shortcomings of solar energy are that it is subject to weather and is not available in the nighttime. The weak points may be effectively made up for when solar energy collected on a fine day is stored in the form of hydrogen energy for recovery as required. In this report, power generated by solar cells is used for the electrolysis of water for the generation of hydrogen. The amounts of the thus-generated hydrogen and hydrogen energy are determined and, on the basis of the measured amount of insolation, the solar energy availability rate (hydrogen conversion performance) is calculated. The amount of hydrogen generated in fiscal 1996 is also calculated for every month. The hydrogen generation level is quite low in the TiO2 wet type solar cell, approximately 0.2% at most. The current efficiency is fairly high in hydrogen generation using electrolysis, which is approximately 96-97%. The efficiency is higher when several units of electrolyte are connected in series until the solar cell optimum voltage is attained. A linear relationship is found between the daily summation of insolation and the amount of hydrogen generated. 1 ref., 7 figs., 2 tabs.

  12. Analysis of output characteristics of PV modules under natural sunlight; Shizen taiyokoka ni okeru taiyo denchi module shutsuryoku tokusei no kaiseki

    Energy Technology Data Exchange (ETDEWEB)

    Murai, Y.; Igari, S. [Japan Quality Assurance of Organization, Tokyo (Japan)

    1997-11-25

    The paper measured current/voltage characteristics of various PV modules under natural light and analyzed various characteristics such as generated output and module power generation efficiency. In the experiment, installing various PV modules at the solar techno center located at north latitude 34.7deg and east longitude 137.6deg, measurement was made by I-V curve tracer, pyranometer, and thermocouple buried on the module back. As a result, the following were confirmed: As to the monthly mean power generation efficiency, the crystalline system is lowest in summer and highest in winter, and the amorphous system highest in summer and lowest in winter. Concerning the power generation efficiency and illuminance, the gap of power generation efficiency between at high illuminance and at low illuminance is large in the crystalline system and small in amorphous system. Relating to the azimuth angle of module installation and the generated output, the installation inclined 15deg angle west in summer and 15deg angle east in fall/winter generates more power in the crystalline system. On the contrary, the installation on the south face generates more power in the amorphous system. 4 refs., 8 figs., 3 tabs.

  13. Study of installation of PV systems at campus; Campus ni okeru taiyoko hatsuden donyu ni kansuru kenkyu (taiyo denchi nomi wo secchishita baai no yobi kento)

    Energy Technology Data Exchange (ETDEWEB)

    Tsuboi, N.; Tanaka, H.; Okumiya, M. [Nagoya University, Nagoya (Japan)

    1997-11-25

    In terms of energy consumption, environmentality and economical efficiency in the case of installing the photovoltaic power system on the rooftop of the university campus, a comparative study was conducted with other power generation systems. As objects to be comparatively studied, selected were the all-electric type centralized space heating/cooling system, cogeneration system, nighttime heat storage system and centralized system with solar cells installed. The panel area of the PV system is 10,000m{sup 2} on the rooftop and 7,000{sup 2} on the outer wall. About data on solar radiation, average values obtained in Nagoya were used. Assessment was made in terms of energy consumption amount at the time of operation, system COP, emission amounts of CO2, NOx and SOx at the time of manufacturing and operation, initial cost, running cost, etc. As a result of the study, an effect of reducing global warming gas was admitted in the PV system. However, the initial cost of the solar cell panel was high, and the life cycle cost of the PV system was lower than other systems. 1 ref., 7 figs., 3 tabs.

  14. Method for estimation of the spectral distribution that influence electric power of PV module; Taiyo denchi shutsuryoku ni eikyo wo ataeru bunko nissha bunpu no suiteiho

    Energy Technology Data Exchange (ETDEWEB)

    Yamagami, Y.; Tani, T. [Science University of Tokyo, Tokyo (Japan)

    1997-11-25

    A method was proposed for estimating the spectral distribution using air mass, precipitable water, and clear indexes which are generally obtainable, and a comparative study was made between the spectral distribution obtained by this method and the measured data using output power of PV modules, etc. as indexes. When solar light comes into the atmosphere, it dissipates receiving scattering/absorption by various gases and aerosols. Direct light component and scattered light component which arrive at the earth surface become functions of air mass and precipitable water. The wavelength distribution of scattered light in cloudy sky is not dependent upon air mass, but affected strongly by absorption band by steam of clouds. By relational equations considered of these, output power and short-circuit current of PV modules are obtained to make a comparison with the measured data. As a result, it was found that this method estimated the spectral distribution with accuracy. Further, seasonal changes in the spectral distribution were well reproduced. The simulation of the module output in Sapporo and Okinawa brought a result that the output in Okinawa is 1.93% larger than in Okinawa. 5 refs., 5 figs., 6 tabs.

  15. Shunt and series resistance of photovoltaic module evaluated from the I-V curve; I-V tokusei kara hyokashita taiyo denchi no shunt teiko to chokuretsu teiko

    Energy Technology Data Exchange (ETDEWEB)

    Asano, K; Kawamura, H; Yamanaka, S; Kawamura, H; Ono, H [Meijo University, Nagoya (Japan)

    1997-11-25

    With an objective of discussing I-V characteristics when a shadow has appeared on part of a photovoltaic module, evaluations were given as a first stage of the study on saturation current, shunt resistance and series resistance for the solar cell module. As a result of measuring change in amount of power generated in a sunny day with a shadow appearing over the solar cell module, reduction in power generation capability of about 23% was verified. In other words, the I-V characteristics of the solar cell module change largely because of existence of the shadow caused on the module. The I-V characteristics curve may be expressed and calculated as a function of the shunt resistance and series resistance. By curve-fitting measurement data for a case of changing insolation without existence of partial shadow, values of the shunt resistance and series resistance were derived. As a result, it was found that the calculations agree well with measurements. It was made also clear that each parameter shows temperature dependence. 6 refs., 10 figs., 1 tab.

  16. Concentration characteristics and cell arrangement in luminescent concentrator PV modules; Keiko shukogata taiyo denchi module no cell haichi to shuko tokusei

    Energy Technology Data Exchange (ETDEWEB)

    Inamura, A [Science University of Tokyo, Tokyo (Japan); Sakuta, K [Electrotechnical Laboratory, Tsukuba (Japan)

    1997-11-25

    A luminescent concentrator PV module requires no tracking equipment and can use scattered light. A mini PV module was prepared from a luminescent plate of 100times100times3mm, and a single-crystalline PV cell of 100times20mm. Characteristics of various prototype modules with different PV cell areas and cell arrangements were also measured. Four kinds of edge reflecting materials with different reflectances by various white coating were applied to Al sashes for module frames, and each sash was fixed on one edge of the luminescent plate. In experiment, 3 other edges were covered with black tapes to reduce each reflectance to 0%. Although PV module output was affected by reflectance of edges, the output was satisfactory at 90% or more in reflectance showing no difference in output. A concentrating efficiency decreased with an increase in luminescent plate (concentrator) area, while it was improved by cell arrangement with short optical pass length, and cell arrangement hardly affected by edge reflection. 4 refs., 7 figs.

  17. Technological development for super-high efficiency solar cells. Survey on the commercialization on analysis; Chokokoritsu taiyo denchi no gijutsu kaihatsu. Jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the survey results on analysis of super-high efficiency solar cells for practical use in fiscal 1994. (1) On the survey on crystalline compound solar cells, it was pointed out that the present study target is III-V compound semiconductor solar cell, and efficiencies of 36-39% are theoretically expected by use of two-junction cells. (2) On structure of super-high efficiency solar cells of 40%, selection of upper and lower cell materials for multi-junction cells, high-efficiency tandem Si solar cells, and the merit and possibility of light collection operation were surveyed, and their issues were discussed. (3) On physical properties of mixed crystalline semiconductors and characteristic evaluation of solar cells, impurities, trap center, minority carrier life, and applicability of supper lattice structure to high-efficiency solar cells were surveyed. (4) On fabrication technology of compound semiconductor solar cells, various problems of and approaches to electrode formation and antireflection film technologies, the meaning and issues of thin film substrate technology and continuous process, trial calculation of costs, safety, and resource problem were surveyed.

  18. Control method for light deterioration of amorphous solar cell. Temperature effect method; Amorphous taiyo denchi no hikari rekka yokuseiho. Ondo kokaho

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, H.; Yokoyama, S.; Itsumi, J. [Kumamoto Institute of Technology, Kumamoto (Japan)

    1996-10-27

    This paper describes a proposed method for suppressing light deterioration (temperature effect method), in which an annealing effect was always expected by laminating an NEM element and a heat insulation material on the back side of a-Si solar cell module and thereby raising the temperature in the back side of the module, and also describes an outdoor exposure test device completed for the method. The NEM element consisted of conductive potassium titanate and high molecular polymer and was a self temperature-controlling organic exothermic body that required no outside temperature control device. It was provided with a heat generating temperature of 45-75{degree}C as the exothermic property of the element and capable of generating heating temperature arbitrarily according to the purpose. The NEM element varied a resistance value against the ambient temperature and kept the element temperature constant. Measurement was commenced starting April 19, 1996, using the completed outdoor exposure test device and a measuring circuit. The deterioration phenomenon was and from then on continuously examined under the following conditions: (1) measurements were those of clear days only, and (2) measurements to be used were those between 10:00 and 14:00 with the quantity of solar radiation on a constant level. 4 refs., 4 figs., 1 tab.

  19. Development of measurement device for evaluation of solar cell module output. 2; Taiyo denchi module shutsuryoku hyokayo sokuteiki no kaihatsu. 2

    Energy Technology Data Exchange (ETDEWEB)

    Minoda, M.; Itsumi, J. [Kumamoto Institute of Technology, Kumamoto (Japan)

    1996-10-27

    Enhancement in design efficiency may be attained as well as utilization in maintenance if on-the-spot data is made available, for the purpose of flexibly dealing with changes in design or matching with a house structure, in calculating the power generation output of a solar cell (PV) module. Under the circumstances, a small-sized compound measuring device was produced as a prototype which, using an I-V curve tracer, measured output and condition of a roof at the time of installation, compared with the optimum operation and predicted the power generation. The device was structured with the main body consisting of a computing part, measurement controller and power supply and with various sensor modules. The electron load control method was employed in order to measure I-V characteristics of the PV module, since it was desirable to use a variable load and to cover the range from the release voltage of a solar cell to the short-circuit state through the maximum output point. The reference module method was used for the system evaluation. The device was presumably applicable to a PV system design by incorporating a sensor module for measuring design environment data, which was essential at the time of a system design, in addition to those for measuring output. 9 refs., 4 figs., 3 tabs.

  20. Effect of PV module output power on module temperature; Taiyo denchi no shutsuryoku henka ga module hyomen ondo ni oyobosu eikyo

    Energy Technology Data Exchange (ETDEWEB)

    Hongo, T; Kitamura, A [Kansai Electric Power Co. Inc., Osaka (Japan); Igaki, K; Mizumoto, T [Kanden Kako Co. Inc., Osaka (Japan)

    1996-10-27

    Effect of the photovoltaic (PV) module output power variation on the module surface temperature has been investigated by field measurements. PV modules with capacity of 54 W were used for the temperature measurements. Three 2 kW-class PV systems were operated. T-type thermocouples were used for measuring temperatures. Measurement time intervals were 15 minutes, 30 minutes, 60 minutes, and 24 hours. Measurement period was between May 25, 1995 and June 25, 1996. The surface temperature increased during non-loaded PV output, and decreased during load-carrying PV output. Difference of the surface temperature between non-loaded PV output and load-carrying PV output was 3.5{degree}C at maximum through a year. The surface temperature was saturated within 30 minutes. When PV output was changed in 30 or 60 minutes interval, the variation of surface temperature was distinctly observed. When PV output was changed in 15 minutes interval, it was not observed distinctly. There was no difference of the surface temperatures during the time zones with less solar radiation, such as in the morning and evening, and at night. Except these time zones, difference of the surface temperatures was 3.5{degree}C at maximum. 4 figs.

  1. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for thin substrate polycrystalline solar cells (compound semiconductors and their fabrication technologies); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Usumaku taiyo denchi jitsuyoka no tame no kaiseki hyoka (kagobutsu taiyo denchi zairyo oyobi seisaku gijutsu no kaiseki hyoka)

    Energy Technology Data Exchange (ETDEWEB)

    Oyagi, H; Okada, Y; Yamaguchi, H; Shiota, T; Kuroda, S; Igarashi, O; Tanino, H; Makita, Y; Yamada, A; Kimura, S; Ohara, A; Niki, S; Shibata, H; Fons, P [Electrotechnical Laboratory, Tsukuba (Japan)

    1994-12-01

    Described herein are the results of the FY1994 research program for analysis and evaluation for thin-film compound semiconductor solar cells. The study on epitaxial growth and optical properties of the thin films of CuInSe2 and CuGaSe2 evaluates the thin epitaxial films grown under various conditions, showing morphology of the defects at the interface of heteroepitaxial growth. These results are used to set the growth conditions under which a thin film of high luminescence by exciter recombination is produced. The study also gives information of luminescence transition in the vicinity of the band ends and of energy level between the bands. The study on structural analysis of the epitaxially grown thin films of CuInSe2 investigates dependence of lattice constants of the MBE-grown CIS layer on film thickness by the X-ray diffractometry based on the bond method. The study on epitaxial growth by the Se(CH3)2-halogen transfer method tests epitaxial growth of the single-crystalline Mo on a substrate of single-crystalline sapphire. 5 figs.

  2. Fiscal 1994 achievement report. Development of photovoltaic power generation system practicalization technology - Development of ultrahigh-efficiency solar cell technology (Development of new photoelectric conversion material technology - Research on future feasibility of wet-type solar cells); Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Chokokoritsu taiyo denchi no gijutsu kaihatsu (shinkoden henkan zairyo no gijutsu kaihatsu (shisshiki taiyo denchi no shoraiteki kanosei no chosa))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-03-01

    A survey is conducted of wet-type solar cells that may constitute an important field in solar chemistry. The wet type solar cell made known by Graetzel et al. in 1991 is a combination of ultrafine TiO{sub 2} grains and a sensitizing dye. The ultrafine grain surface structure enlarges the area of an electrode for the absorption of 46% of incident solar radiation of which 80% or more is converted into electric power. The fill factor at 520nm of a cell fabricated for an additional test turns out to be 40% against the 76% mentioned in technical literature, and the conversion efficiency 10%. The Titanyl sulfate is also tested because it is low in price as material for titanium oxide. Functional groups are experimentally introduced for the generation of bonds on the substrate to be effective in the injection of a sensitizing dye. A sensitizing dye with two carboxyl groups and two bipyridine rings as ligand is allowed to be supported by TiO{sub 2}. IR (infrared) spectrometry is performed, and then formation is found of ester-like bonds or chelate bonds due to the interaction of carboxyl groups and the substrate surface. This is enhanced by surface treatment. (NEDO)

  3. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (CuInSe2 based PV cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (CuInSe2 taiyo denchi seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of CuInSe2 based PV cell in fiscal 1994. (1) On formation of high-quality CIGS thin films by bilayer method, Mo film was deposited on a glass substrate by sputtering, and CIGS film with different Ga/In ratios was next formed on the substrate by quaternary simultaneous deposition at different In and Ga deposition speeds. In addition, CdS film was deposited on the CIGS film, and ZnO and ITO films were finally deposited on it by sputtering to complete solar cell. This solar cell offered the maximum conversion efficiency among cells using CIGS film. (2) On formation of high-quality CIGS thin films by three-stage method, a certain correlation was found between substrate temperature and CIGS film composition by monitoring substrate temperature in film forming process. This phenomenon allowed rigorous control of CIS film compositions important for CIS thin film solar cells. (3) On low-cost process technology for thin film formation, Cu(In,Ga)S2 solid solution film was fabricated by expanded selenic process. 3 figs.

  4. Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (CdS/CdTe solar cell modules); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (CdTe taiyo denchi module seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of CdS/CdTe solar cell modules in fiscal 1994. (1) On the fabrication technology for high-efficiency large-area solar cells, high-quality CdTe active layer was studied. S content taken in the active layer at sintering of CdTe decreased with an increase in formed CdTe, resulting in improvement of Voc of cells. (2) On the window layer with wide band gap, the solar cell superior in collection efficiency and photoelectric characteristics could be obtained using the newly developed mixed crystal film of Cd(1-x)Zn(x)S. (3) On the forming technology of large-area coating/sintering films, improvement of CdS film quality was studied by pressurized processing of printed CdS films. As a result, improvement of film density and light transmissivity was confirmed. (4) On the leveling process technology of CdTe films, smooth surface films were obtained by experiment using an equipment simultaneously exciting samples in all directions as one of uniform coating methods of films. 7 figs.

  5. Achievement report on Sunshine Program research and development for fiscal 1981. Research and development of amorphous solar cells (Research and development of integrated type amorphous solar cells); 1981 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Shusekigata amorphous taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-01

    An a-SiC (amorphous SiC) material with a wider band gap adds to the conventional hydrogen- and fluorine-based a-Si materials in the study for device efficiency enhancement, and the a-SiC is found suitable as a wide-gap window material. The separated formation technique is found to work effectively for improvement on cell characteristics because it prevents the mixing of impurities of different types. A p-i-n (positive-intrinsic-negative) type amorphous solar cell is subjected to analysis, and a theoretical efficiency of 12.5% is obtained in photoelectric conversion. A conversion efficiency not less than 7% is obtained from an ITO (indium-tin oxide)/p(SiC)-i-n/Al cell on a glass substrate. Design is optimized for area enlargement for an integrated type device, which results in an experimental 10cm-square integrated type solar cell with a conversion efficiency of not less than 5%. As for modularization, a glass substrate for integrated type device is used, as is, as a light-receiving surface protecting board, and studies are conducted thereon. It is then found that the amorphous solar cell experiences some degradation in reliability at the beginning of an irradiation test but that no extensive degradation in reliability is observed even after the passage of 1,000 hours from the beginning of the test. The separated formation technique is found suitable for use in mass production. (NEDO)

  6. Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of technologies for enlarging amorphous solar cell area); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (amorphous taiyo denchi no daimensekika gijutsu no kenkyu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-01

    In the basic studies of large-area a-Si film formation technologies, the validity is discussed of the evaluation technique using plasma optical emissions spectrometry (OES) employed for the achievement of the intended film qualities. The film forming condition that exerts the greatest influence on the plasma state relative to OES is the power of discharge, and correlations are found to exist between specific emission intensity, infrared absorption level, and photoconductivity of the film. It is found that a P- or B-doped Si:H/SiC:H film is suitable as the material for the window layer on the light-receiving surface of the solar cell. Materials are studied for the i-layer responsible for photo carrier generation, isolation, and acceleration. Studies are also conducted on fluorine-containing film. In the efforts at designing and building solar cells, ITO (indium-tin oxide)/n-i-p/SS (reversed type) cells are analyzed, designing is carried out for transparent electrode film thickness optimization, window effect in stainless substrate cells is improved, glass substrate cells are experimentally built and analyzed, large-area solar cell properties are improved, interaction between the substrate and a-Si is studied, and reliability tests are conducted. For cost reduction, it is necessary to develop technologies of automated production of simplified-structure modules using low-cost materials. Basic matters are taken up for discussion. (NEDO)

  7. Achievement report for fiscal 1981 on Sunshine Program research and development. Research and development of amorphous solar cells (Research and development of amorphous solar cells on flexible film substrates); 1981 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Kadosei film wo kiban to suru amorphous taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-31

    Efforts will be made to reduce the cost, increase efficiency, and enlarge cell areas and, at the same time, to establish the foundation of a roll-up type solar cell manufacturing process which is required for the implementation of mass production. In an inverted pin/ITO (indium-tin oxide) hetero-face structure cell installed on a polymer film substrate, a conversion efficiency of 5.33% is achieved in the case of a solar cell whose n-layer is of the amorphous phase, and 6.36% in the case of a cell of the microcrystallized phase. A roll-up type glow discharge CVD (chemical vapor deposition) unit is designed and experimentally built, which is for the realization of large area cells. It is now duly expected that an undoped (i-type) a-Si:H film will be deposited to a thickness of approximately 5000A. As the result of a first-step screening conducted in search of amorphous solar cell sealing materials, some applicable plastic materials are selected. The future is bright of amorphous solar cells on polymer film substrates. (NEDO)

  8. An intensity monitor for solar hydrogen Lyman-alpha radiation (TAIYO SXU)

    International Nuclear Information System (INIS)

    Oshio, Takanori; Masuoka, Toshio; Higashino, Ichiro; Watanabe, Norihiko.

    1975-01-01

    The absolute intensity of hydrogen Lyman-alpha (1216A) from the total solar disk is currently monitored by an ion chamber as a part of the satellite mission of TAIYO. The apparatus consists of an ion chamber with a special input control mask and associated electronics. The ion chamber with an MgF 2 window and filled with NO gas is sensitive to a narrow spectral band including the Lα. The special mask serves to keep the angular response of the detector constant at the elevation angle of the sun relative to the plane perpendicular to the spinning axis of the satellite within an error of the order of one percent, when the angle is within +-30 0 . A flux reducer attenuates the incident radiation upon the detector by a factor of 20 to lengthen the life of detector. The associated electronics measures the output current of the ion chamber, holds the maximum value of the output every four-second period and sends it to the telemeter. From the currently observed data, the absolute intensity of the solar Lα is 3.2 x 10 11 photons/cm 2 sec and constant within +-4.2% during the period from 24 February to 31 May, 1975. (auth.)

  9. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of next-generation thin-film solar cell module manufacturing technology - Development of CIS solar cell module manufacturing technology - Development of high-quality film enlargement technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / jisedai usumaku taiyo denchi module no seizo gijutsu kaihatsu / CIS taiyo denchi module no seizo gijutsu kaihatsu / kohinshitsumaku no daimensekika gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The project aims to establish a manufacturing process that enables both high-quality CuInSe{sub 2} (CIS) film solar cell enlargement and cost reduction and to develop a device structure which uses less heavy metal for the purposes of increasing the CIS thin-film solar cell size and efficiency and decreasing environmental impact. Several element technologies have been established for increasing the area of high-efficiency Cu(In, Ga)Se{sub 2} (CIGS) solar cells. Concerning the enlargement of the photoabsorption layer which is to assume the most important role, it is found that a high-quality CIGS film, which is near homogeneous though within a 10cm times 10cm area, is fabricated by an in-line vapor deposition method. As for dead area reduction and high-speed patterning, it is found that laser scribing works effectively in the patterning of the window layer and photoabsorption layer. As for reduction in the use of heavy metal, a high efficiency of 16.2% is attained in a cell not using a CdS film as expected in the case of a cell using a CdS film, this thanks to a CIGS film surface reforming technique. The technique of junction formation for CIGS solar cells is improved, and then a true efficiency of 18.5% is achieved. (NEDO)

  10. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost large-area module manufacturing technology - Development of next-generation thin-film solar cell manufacturing technology - Development of CIS solar cell module manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu / jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu / CIS taiyo denchi module no seizo gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    This research aims to achieve a conversion efficiency of 13% and a manufacturing cost of 140 yen/Wp with a 30cm times 30cm Cu(InGa)Se{sub 2}-based thin-film solar cell submodule. Ga and sulfur are combined and a film fabrication technology was developed which would improve on Voc. Concerning Ga, a laminated precursor layer was fabricated and evaluated, which comprised a Cu-25wt%Ga alloy layer and a Ga source which was a Cu-48%Ga alloy layer. Concerning sulfur, the vapor phase selenization temperature and the selenization retention time in an H{sub 2}Se gas atmosphere was allowed to vary for a change in Cu(InGa)Se{sub 2} calcopyrite crystallinity for the study of relations between the amount of sulfur taken in and the solar cell characteristics, and the relations were assessed by EPMA (electron probe microanalyzer). Technologies were developed for the fabrication of high-resistivity buffer layers by solution growth, for the fabrication of window layers (transparent, conductive ZnO film) by sputtering, and for their patterning. Submodules of a ZnO/Zn(O,S,OH)x/Mo structure were fabricated, 10cm times 30cm and 30cm times 30cm in size. The former achieved 12.5% in conversion efficiency, and the latter 11.6%. (NEDO)

  11. Achievement report for fiscal 1997 on development of technologies for practical photovoltaic system under New Sunshine Program. Manufacture of thin-film solar cell / low-cost and large-area module / next-generation thin-film solar cell (Manufacture of thin-film polycrystalline solar module); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu, jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Fiscal 1997 is the first year of another 4-year-long research and development phase. In addition to researches for improving on thin-film polycrystalline Si cell efficiency that have been under way, new efforts are started, which include the development of practicality-conscious thin film producing technologies aiming at higher throughput and yield and the development of modularization process technologies which are necessary for putting thin-film cells to practical use. Concerning the formation of a power generation layer on a polycrystalline Si thin film formed by the ZMR (zone-melting recrystallization) process, studies are conducted for improvement on its throughput and yield using a new CVD (chemical vapor deposition) unit. A method of modularization is evaluated, which involves a laminate of a thin-film cell attached to a resin-coated, reinforced glass substrate and an EVA (ethylene vinyl acetate) back film. A remarkable achievement is earned toward the practicalization of technologies of thin film formation enhanced in quality and throughput and technologies of thin film modularization. (NEDO)

  12. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, next generation thin film solar cell module manufacturing technologies, development of thin film poly-crystalline solar cell module manufacturing technologies); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu kaihatsu (jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Research and development has been performed on a high throughput forming technology and a modularization technology for thin film poly-crystalline solar cell modules. This paper summarizes the achievements in fiscal 1999. In developing the high throughput forming technology for a high-quality thin film, research has been made on a low-cost VEST process to re-utilize substrates by separating the thin film from the substrate. In the melting re-crystallization process, it was discovered that plasticity deformation of the substrate can be reduced greatly by raising the substrate heating temperatures. It was also found out that substrate warping amount can be reduced to about one-fifth of the conventional amount by making the thickness greater than 1.5 mm and raising the heating temperatures higher than 1300 degree C. In developing the thin film modularization technology, it was indicated that the property improving effect remains the same even if the hydrogen passivation method is changed from the hydrogen ion injection to the hydrogen plasma processing. In the trial fabrication of the thin film modules, a conversion efficiency of 13.1% was achieved in nine-cell structured modules. (NEDO)

  13. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost large-area module manufacturing technology - Development of next-generation thin-film solar cell manufacturing technology - Development of thin-film polycrystalline solar cell module manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu / jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The aim is to realize the practical application of the above-named solar module expected to exhibit higher efficiency and reliability and achieve cost reduction through consumption of less materials. In fiscal 1998, 1) technologies were developed to reduce substrate warpage during recrystallization for the higher-throughput fabrication of high-quality thin films and 2) technologies were also developed for the realization of higher-throughput fabrication of thin films and for efficiency improvement for thin-film modules. Under item 1), experiments were conducted by simulation for reducing warpage to occur in thin-film polycrystalline Si substrates during fabrication by melting and recrystallization. Under item 2), for the development of thin-film cell high-throughput technologies, studies were started on a more practical hydrogen plasma process to challenge the conventional process of crystal defect inactivation by hydrogen ion injection with which achievement of high throughputs is difficult. For the development of technologies for the enhancement of thin-film module efficiency, efforts were exerted to realize a 10cm times 10cm square shape for the enhancement of efficiency in the process of filling modules with cells. These efforts achieved a great step toward future practical application. (NEDO)

  14. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, next generation thin film solar cell module manufacturing technologies, development of CIS solar cell module manufacturing technologies); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu kaihatsu (jisedai usumaku taiyo denchi no seizo gijutsu kaihtsu (CIS taiyo denchi module no seizo gijutsu kaihatsu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Research and development has been performed on a technology to manufacture CIS-based thin film solar cells. This paper summarizes the achievements in fiscal 1999. In the research of a large-area light absorbing layer manufacturing technology, investigation was made on light absorbing layers in manufacturing sub-modules with a size of 30 cm times 30 cm. With regard to the temperature condition in the light absorbing layer forming process, it was found that the cooling rate affects particularly the adhesion in the connecting interface of the light absorbing layer and the Mo rear electrode layer. In addition, it was revealed that the sulfur take-in amount can be increases by extending the retention time at the sulfurizing temperature and by decreasing the temperature to turn the gas phase into selenium. In the research of elementary technologies to establish the mass production process, developments were performed on the high-resistance buffer layer manufacturing technology, the high-quality window layer film manufacturing technology, and the technology to manufacture rear electrode layer made of high-quality metals. In developing the patterning technology, two kinds of the existing patterning devices were modified and adjusted for patterning the substrates with a size of 30 cm times 30 cm. In addition, a processing device was installed in the conventional manually operated process for module finishing. (NEDO)

  15. Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture thin film solar cells, development of technologies to manufacture low-cost large-area modules, development of technologies to manufacture next-generation thin film solar cells (development of technologies to manufacture CIS solar cell modules); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu, jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (CIS taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Research and development was made with an objective to achieve conversion efficiency of 13% in a 30 cm times 30 cm size submodule of a CIS-based thin film solar cell, and to develop a manufacturing technology that can achieve 140 yen/Wp. This paper describes the achievements attained during fiscal 1997. In fiscal 1997, based on the achievements reached during the previous year, a submodule with a size of 10 cm times 30 cm was fabricated for an attempt of improving the open voltage and short circuit current density. Simultaneously, the applicability thereof to a module with an area as large as 30 cm times 30 cm was evaluated. As a result of experimental discussions, enhancement in the open voltage was verified by increasing amount of Ga or sulfur, but it was not possible to achieve 600 mV or higher. In the research of component technologies to establish a mass production process, research and development was made on a high-resistance buffer layer film forming technology, a high-quality window layer film forming technology, a high-quality metallic rear electrode film forming technology, and patterning technologies. The outdoor exposure test was continued on laminated mini-modules with a size of 10 cm times 10 cm. (NEDO)

  16. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  17. Output characteristic of photovoltaic module on different installing conditions. Comparison with calculated value and measured value; Secchi joken no kotonaru taiyo denchi module no shutsuryoku tokusei. Suchi kaiseki to jissokuchi tono hikaku

    Energy Technology Data Exchange (ETDEWEB)

    Sasaki, T.; Morita, Y.; Iwawaki, H.; Fujisawa, T.; Tani, T. [Science University of Tokyo, Tokyo (Japan)

    1997-11-25

    The paper studied output characteristics of photovoltaic modules different in installation conditions on the basis of the energy balance state. In the study, an energy balance equation was constructed for insolation intensity, heat losses from PV surface/back, and output, in order to calculate cell temperatures in each installation condition. A comparative study was made between calculated results and measured data obtained on the top of the school building. The results indicated the following: The thickness of thermal boundary layer became approximately 27mm at insolation intensity of 800 W/m{sup 2}, ambient air temperature of 25degC, and wind velocity of 0.5m/s. When widening air gap from 20mm to 40mm, the cell temperature decreased 4degC, and the output increased 1.6%. In the case of installing photovoltaic modules on the roof considering the relation between the air gap in the heat balance state and the thickness of thermal boundary layer, heat from PV back was released outside the air gap if widening the air gap to more than 30-40mm. The type with a heat insulating material on the panel back decreased in output from other types. 5 refs., 7 figs., 4 tabs.

  18. Fiscal 1976 Sunshine Project result report. R and D on photovoltaic power generation system (R and D on new type solar cell); 1976 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Shingatashiki taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1977-05-30

    This report describes the fiscal 1976 research result on new type solar cells for photovoltaic power systems. On junction formation, the solar cell fabricated by spray coating showed output characteristics equivalent to that by rotary coating or phase diffusion, and inexpensive coating liquid, 1/40 of commercially available liquid in price, showed a sufficient result, however, the conversion efficiency of P{sup +}/N elements was insufficient. Schottky barrier polycrystal Si thin film was suitable for large-area elements without any property degradation. Small grain boundary density of polycrystal layers was also necessary. Temperature characteristics of collector element structure with a comb electrode were calculated theoretically. Change in diffusion length of minority carriers due to temperature well agreed between measured and calculated ones. Optimization calculation was also carried out. The size, curve, weight and transmissivity of plastic and glass materials for solar cell packaging were evaluated by continuous outdoor exposure tests. Fluorinated ethylene-propylene, methyl methacrylate and polycarbonate plates and glass were the most promising materials because of less deformation. (NEDO)

  19. Fiscal 1974 Sunshine Project result report. R and D on photovoltaic power generation system (R and D on new type solar cells); 1974 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Shingatashiki taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1975-05-27

    This report summarizes the fiscal 1974 research result on R and D of new type solar cells, which includes researches on (1) solar cell structure, (2) packaging, and (3) improvement of a conversion efficiency. In the 1st research, theoretical study was made on the relation between a solar cell efficiency and various design factors to obtain basic data for ordinary cell structure and vertical junction type cell structure. As impurity source, a thermal diffusion method using doped oxide by CVD was compared with that using boron nitride, resulting in no difference in solar cell characteristics between both methods. The measurement results on contact resistances of Al, Fe and Ni with electrodes prepared by electron beam deposition showed that these materials are applicable to Si more than 10{sup 18}/cm{sup 3} in impurity density as electrode materials. In the 2nd research, exposure tests were made on some kinds of specimens, resulting in no troubles. Study was made on production costs and structures suitable for automatic production of 4 kinds of packages with different basic structures. In the 3rd research, the prototype solar cell was prepared to use under solar radiation within 20SUNS. (NEDO)

  20. Design and construction of radiant panel for cooling and heating with photovoltaic and thermoelectric element modules; Taiyo denchi to netsuden soshi module wo mochiita fukusha reidanbo panel no sekkei oyobi shisaku

    Energy Technology Data Exchange (ETDEWEB)

    Sato, M; Tani, T [Science University of Tokyo, Tokyo (Japan); Kadotani, K; Imaizumi, H [Komatsu Ltd., Tokyo (Japan)

    1997-11-25

    Utilizing cooling properties and current voltage characteristics of a small cooling panel using thermoelectric elements which had been fabricated previously on a trial basis, design and prototype production were executed on a large radiant cooling and heating panel driven by photovoltaic cell modules. The panel design set the cooling area to about 0.5 m {sup 2} and the number of elements to 70 pieces, and optimum number of elements in series and parallel connection was derived. As a result of the analysis, it was made clear that the optimum number of thermoelectric module arrays in series and parallel connection varies depending on insolation intensity. It was found preferable that the number of parallel connection array be set to one to two in a region or time period in which low insolation intensity is distributed in greater amount. In the case where high insolation intensity is distributed in a greater amount, setting it to two to three is preferable. By using the structured design method and the HASP Tokyo data, thermoelectric element modules were interconnected with 35 modules in series and two in parallel on a cooling panel installed on the roof of the Science University of Tokyo. A simulation result revealed that the average temperature difference on the cooled surface in summer is 4.37 degC, and the solar cell utilization rate is 0.67. It is necessary in the future to improve heat dissipation efficiency and area ratio. 1 ref., 12 figs., 5 tabs.

  1. Dependence of open-circuit voltage of SnO2-nSi solar cells; SnO2-nSi taiyo denchi no sanka ondo menhoi izonsei

    Energy Technology Data Exchange (ETDEWEB)

    Shinoda, S; Shimizu, A; Yano, K; Kasuga, M [Yamanashi University, Yamanashi (Japan). Faculty of Engineering

    1997-11-25

    Although metal(or semiconductor)-semiconductor solar cells, SnO2-nSi solar cell for example, are superior in cost and efficiency, its barrier height and open-circuit voltage V(oc) are lower than those of p-n junctions. To improve these defects, study was made on the dependence of V(oc) on oxidation temperature and surface orientation using various solar cells prepared from (100)Si and (111)Si under various oxidation conditions. As a result, the density of surface states increases with a decrease in oxidation temperature of Si substrates, resulting in an increase in diode factor and V(oc). In this case, since oxide films are extremely thin and contribution of non-terminated bonds is large in the initial oxidation stage, the quantity of dangling bonds is larger in (100) plane than (111) plane, resulting in an increase in diode factor and V(oc). Since the surface energy level (the degree of electrons dominated by acceptor-like surface state from this level to the top of a valence band) of (100) Si is lower than that of (111) Si, the effective barrier height and V(oc) increase. 28 refs., 6 figs., 2 tabs.

  2. Development of technology for thin substrate polycrystalline solar cells for practical use. Survey on analysis for practical use; Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the survey results on the manufacturing technology trend of thin substrate solar cells for practical use in fiscal 1994. In production of Si raw material, as electron beam melting and ingot production are combined, C, P, Ca and Al are removed by evaporation, while Fe and Ti by solidifying segregation. As the basic technology of continuous casting for substrate production, a drop coagulation method for Si melt is under investigation which is more advantageous in unidirectional solidification and cell conversion efficiency than conventional methods. The cost and future of single crystal Si and polycrystal Si were compared on the basis of document survey. Every institute commonly uses FZ substrates to produce single crystal Si cells, and SiO2 for surface passivation. New cell structure, hetero-structure, thin cell, crystalline defect and lifetime are under investigation for ultrahigh-efficiency solar cells. The technology trend was also surveyed through academic societies and conferences. 5 tabs.

  3. Research and development of evaluation system for photovoltaic power generation system. Research and development of evaluation systems for photovoltaic cells and modules; Taiyoko hatsuden system hyoka gijutsu no kenkyu kaihatsu. Taiyo denchi hyoka system no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on R and D of the evaluation system for solar cells in fiscal 1994. (1) On development of the performance evaluation method for solar cells, data collection, analysis and measurement of atmospheric conditions necessary for outdoor measurement were carried out to improve the measurement accuracy of laminated solar cells. The validity of measurement methods was verified by comparing experimental results with outdoor measurement ones to improve the indoor measurement accuracy by multiple light source solar simulator. Generated energy in solar cell module level was also studied in field. (2) On development of the reliability evaluation method for solar cells, deterioration data were collected and analyzed by long-term exposure test. As a result, it was clarified that Pmax values are directly affected by seasonal change in air mass, and deterioration of solar cells is hardly found after exposure test for one year, showing a stable state. The characteristic recovery experiment of amorphous solar cell modules was carried out, and the accelerated deterioration test method of thin film cell modules was also studied. 2 figs.

  4. Research and development of evaluation system for photovoltaic power generation system. Survey on research and development of solar cell evaluation system; Taiyoko hatsuden system hyoka gijutsu no kenkyu kaihatsu. Taiyo denchi hyoka system no kenkyu kaihatsu chosa

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the survey results on R and D of solar cell evaluation systems in fiscal 1994. The performance/reliability evaluation subcommittee continuously analyzed technical issues and discussed solution measures from the last fiscal year. On development of performance evaluation methods, improvement of measurement accuracy for laminated solar cells is the study issue to be solved. Although laminated solar cells are measured by multiple light source solar simulator, difficult spectrum compensation causes measurement errors. Collection and analysis of data for determining atmospheric conditions, and outdoor measurement experiment under the atmospheric conditions for reference solar light were carried out. The study on incident angle characteristics of laminated solar cells clarified that the deviation from COS characteristics is 1.0% or less at an incident angle of 30{degree}. The study on generated energy in solar cell module level in field clarified that generated energy and generation efficiency are proportional to intensity of solar radiation. 1 tab.

  5. Research on fabrication technology for thin film solar cells for practical use. Survey on the commercialization analysis; Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Jitsuyoka kaiseki ni kansuru chosa kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the survey results on the technological trend, safety and latest technologies of thin film solar cells in fiscal 1994. As the fabrication technology for amorphous film solar cells, three-electrode plasma CVD was surveyed as fabrication method for high-mobility materials, and hydrogen radical CVD as fabrication method for high-photostable films. Current foreign and domestic reliability tests were surveyed for reliability evaluation of solar cells. In order to ascertain the performance, efficiency, physical properties and optimum structure of polycrystalline Si thin film solar cells, previously reported test results on physical properties such as carrier concentration, carrier lifetime and mobility of films were surveyed together with device simulation results. In addition, technologies for high-efficiency CuInSe2 system and CdTe system solar cells, technologies for cost reduction and mass production, and environmental influence were surveyed. Estimation of production costs for cell modules, and safety of thin film solar cells were also surveyed.

  6. Valuation of the quantity of electric output from photovoltaic generation system in case of PV module applied to installing to vertical direction; Taiyo denchi wo suichoku ni haichishita baai no hatsudenryo hyoka

    Energy Technology Data Exchange (ETDEWEB)

    Miyajima, K [Kansai Electric Power Co. Inc., Osaka (Japan)

    1996-10-27

    In general, it is most efficient and economical to install photovoltaic (PV) modules with proper slope. There are room spaces on the wall except ground or roof. The PV modules were installed on the vertical wall, to consider the compensative method for this weak point. When modules were installed vertically, there is an advantage that reflecting solar light as well as incident solar light can be utilized compared with the installation with slope. The PV modules were installed on the roof of building with inclination of 90{degree} facing to south using the roof material as a reflecting material (S90), and with inclination of 15{degree} facing to south (S15), to compare their output. The output ratio, S90/S15 was 0.42. When it was very fine, this value increased to 0.60. When using plated steel plate as the reflecting material, this value increased to 0.74, which provided 10 to 30% larger output than the roof material. From these results, about 50% of module output of S15 can be expected for S90. If receiving larger reflection, there would only a slight difference in the module output between S15 and S90. 3 figs., 1 tab.

  7. Changes of the temperature coefficients of the characteristics which accompany degradation and recovery of a-Si solar cells; A-Si taiyo denchi no hikari (denryu) rekka oyobi kaifuku ni tomonau tokusei ondo keisu no henka

    Energy Technology Data Exchange (ETDEWEB)

    Yanagisawa, T; Koyanagi, T; Nakamura, K; Takahisa, K; Kojima, T [electrotechnical Laboratory, Tsukuba (Japan)

    1996-10-27

    Pursuant to the measuring of temperature dependency of the characteristics such as conversion efficiency, during the process of degradation in a-Si solar cells due to light and electric current and the process of recovery by annealing, this paper describes changes in temperature coefficients, correlation between the characteristic parameters and the degradation, and the results of the examination of their characteristics. The conversion efficiency {mu} degraded approximately by 45% of the initial value each by the irradiation under a light intensity with 3 SUN accelerated and by the infusion of current at 20mA/cm{sup 2}; and then, the efficiency recovered to 70-75% of the degradation by subsequent annealing. In addition, in the temperature dependency at 80{degree}C against at 20{degree}C, Isc slightly increased while Vcc greatly decreased. This slight increase in Isc was mainly due to the decrease in the width of the forbidden band, while the decrease in Vcc was due to the increase in the reverse saturation current. The temperature dependency of {mu}N was negative, becoming small in accordance with the degradation. The temperature dependency of FF/FFO was negative initially both in light and current, but it decreased with the degradation and turned to positive. The temperature coefficients of I-V parameters reversibly changed corresponding to the degradation and recovery of these parameters and stayed in a good correlation. 7 refs., 8 figs., 1 tab.

  8. FY 1999 report on the verification test on the system interconnection of the photovoltaic power system in Malaysia; 1999 nendo Malaysia ni okeru taiyo denchi hatsuden system no keito renkei jissho shiken seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    JET and SIRIM Behad, which is the standards and industrial research institute in Malaysia, worked this project together, and installed the Photo Voltaic Generation System (hereinafter refferred to as 'PV system') on the roof of the research building for researching basic conditions in the practical use of the PV system by gathering basic data. The power quality of a supply system necessary for a grid connection of the PV system was researched in the evidential experiment. Moreover, the invasion level and the invasion frequency to the PV system of the thunder surge by the peculiar weather condition in this region were researched. In addition, the requisite for the islanding function for the alternative emergency power supply was investigated. The contents of this project were composed of the three items. (1) research of the power quality in low voltage distribution system. Before and after the PV system is connected with the supply system, basic data concerning the power quality of the voltage, the current, and the frequency fluctuation, etc. in the system was collected. (1)measurement and investigation of the power quality under the current low voltage distribution system. By connecting ad monitoring recorder with a lower voltage distribution system, the current power quality i.e. voltage, current, frequency the fluctuation of voltage and frequency at the regular time were measured and investigated. (2) The power quality in the supply system grid connection of the PV system was measured and investigated. The voltage and the frequency in the case of supply system grid connection of the PV system were compared with the current state of preceding clause 1 and the stability of the power quality was evaluated. Moreover the output power of the solar battery was connected with the measurement device and then the surface temperature of the solar battery module, DC voltage, current and quality of solar radiation were measured. The subject in the practical use of the PV system in Malaysia was extracted through these experiments. (2) Research of level and frequency of the thunder surge. 1. Measurement of level and frequency of the thunder surge by the thunder surge counter. The thunder surge counter was set up respectively on the positive line and the negative line of the solar battery. These signals are taken into the memory of the thunder surge counter, and the level and the frequency data of the thunder surge which invade the PV system were accumulated. 2. Evaluation by simulation. The PV system was evaluated to the thunder surge obtained in preceding clause 1 by the simulation. In addition the simulation analysis was conducted by the system equivalent circuit on the assumption of the thunder surge current at the location of the system. (3) Research of the islanding function of the PV system as the backup power supply was evaluated when blacking out. (NEDO)

  9. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of ultrahigh-efficiency crystalline compound solar cell manufacturing technology - Research and survey of peripheral element technologies (Research on practical application of set solar cell); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu / shuhen yoso gijutsu ni kansuru chosa kenkyu (shisshiki taiyo denchi jitsuyoka kanosei chosa)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    Possibility of practical application of dye-sensitized solar cells (Graezel cells) is discussed. Fine titania particle preparation conditions and titania thin-film electrodes were optimized and an energy conversion efficiency of 7.7% was accomplished. The screen printing method was applied to the manufacture of dye-sensitized electrodes, and performance governing factors were grasped. The use of the screen printing method resulted in a conversion efficiency of 6-8.4% when the factors were optimized. Though lower than the 10% in the Graezel report, values near that were obtained. The status of latest research and development is compiled involving studies about electron transfer dynamics in dye-sensitized solar cells, manufacture of sensitizing dyes and mesoscopic metal oxide thin-film, electron transfer layers and their physical properties, and solidification of hole transfer layers. Research was conducted aiming at their practical application, and tasks and problems in each of the said items were point out. A logical approach to achieve high conversion efficiency was deliberated, and studies were made about how to propel forward endeavors involving design guidelines for high-performance sensitizing dyes, design and preparation guidelines for thin film for electrodes, analysis of stability, solidification of the redox electrolyte, etc. (NEDO)

  10. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost/large-area module manufacturing technology - Development of high-reliability CdS/CdTe solar cell module manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    Cost reduction for the above-named solar cells is the aim of this effort. On the basis of the results of past studies, a technology is established of fabricating a thin CdS film by subjecting a CdS film to organometal pyrolysis, and this brings about a decrease in photoabsorption loss in the range of waves shorter than 500nm and a decrease in in-film reflection loss for an increase in short-circuit current density. A proximity sublimation method is used for CdTe film fabrication, which improves on film quality and film adhesion. These efforts result in the achievement of a conversion efficiency of 16.0% which is the highest in the world. Studies are promoted in a process nearer to the ultimate form, and a 30cm times 60cm large CdTe solar cell is fabricated on the basis of a patterning technique, and the product attains a conversion efficiency of 9.8%. In fiscal 1998, studies center about the establishment of a film fabrication process for a medium-are substrate and about the enhancement of its conversion efficiency, and facilities capable of dealing with large-area substrates are introduced and operated. In a typical achievement, a CdTe solar cell is experimentally fabricated in a process which is wholly under normal pressure, and the product with an aperture area of 1376cm{sup 2} exhibits a conversion efficiency of 10.5% according to JQA (Japan Quality Assurance Organization). (NEDO)

  11. Achievement report for fiscal 1997 on developing practical application technology for photovoltaic power generation systems under the New Sunshine Project. Development of technologies to manufacture thin film solar cells, development of technologies to manufacture low-cost large-area modules, and development of technologies to manufacture new type amorphous solar cells; 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu, shingata amorphous taiyo denchi no seizo gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Development will be made on high-performance a-solar cells as part of developing practical application technology for a-solar cells for electric power use. Development will be also made on a low-cost process technology. This paper describes the achievements attained during fiscal 1997. Quality improvement has been realized by using a high RF power hydrogen dilution process on a-Si films for front cells of lamination type cells. Four times faster film forming speed was obtained even by using the VHF plasma CVD process, with film quality equivalent to those made by using the conventional RF process maintained. By optimizing the light enclosing construction, the short circuit current was enhanced by over 20%. Discussions were given on forming homogenous a-Si films by optimizing the conditions for forming films on large-area substrates, which resulted in forming film of 30 cm times 40 cm size with good homogeneity at a film forming speed three times faster than the conventional speed. A surface electrode was formed successfully with good uniformity on a substrate with a size of 60 cm times 90 cm. Productivity greater by over three times the conventional productivity was achieved in patterning of transparent electrodes by using high-output laser. Simultaneous and collective patterning and very small and long size collective patterning were realized in a-Si film selection patterning by using the plasma CVD process. (NEDO)

  12. FY 1999 research and development of technologies for commercialization of photovoltaic power generation systems. Development of technologies for production of thin-film solar cells and low-cost, large-area modules (Development of technologies for high-reliability CdTe solar cell modules); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The research and development project is implemented for production of low-cost, large-area modules of CdTe solar cells by the high-quality film-making process and high-function patterning, and the FY 1999 results are reported. The research program for the large-area TCO film-making technologies involves investigations on improvement of SnO{sub 2} film quality by the mist method and continuous film-making, which lead to continuous, stable production of 34 substrates of low resistance of 9.7{omega} on the average. The program for production of the large-area, thin-film CdS/CdTe solar cells involves production of TCO and CdS by the mist method, and patterning of the laminated TCO/CdS film by laser scribing. The CdTe film is formed by the atmospheric pressure CSS method, and treated with CdCl{sub 2} to improve its crystallinity. The CdTe film is patterned by sand blasting, and provided with the carbon and silver electrodes by screen printing, to complete the cell. The process is totally effected at the atmospheric pressure, needing no vacuum device. The CdTe solar cell assembly (130 cells connected in series, opening area: 5,413cm{sup 2}), fabricated on a trial basis, achieves a conversion efficiency of 10%. (NEDO)

  13. Fiscal 1999 research and development of technologies for practical application of photovoltaic power generation systems. Development of ultrahigh-efficiency crystalline compound solar cell manufacturing technology (Survey of peripheral element technologies - Survey of novel voltaic cell structure solar cell development); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu (shuhen yoso gijutsu ni kansuru chosa kenkyu - shinhatsuden soshi kozo taiyo denchi kaitaku no chosa kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The present state and trend are surveyed of organic ferroelectric thin films, new carbon materials, fullerene compounds, and thermophotovoltaic (TPV) power. In the study of organic ferroelectric thin-film solar cells, the effort still remains at the basic stage, with the conversion rate as low as 3% in Europe and 2% in Japan. The progress of basic studies, however, is worth attention. It is deemed that 15% is the photoconversion rate to be currently expected from new carbon material solar cells. Fullerene compounds include some semiconductors whose bandgap values may be controlled across a 0.75-1.95eV range, and they may find their place in thin-film solar cells. However, their physical properties are not fully known, and their development into devices such as solar cells is scarcely reported. The research and development of TPV in the U.S. is led by NASA (National Aeronautics and Space Administration) and NREL (National Renewable Energy Laboratory), with their efforts concentrated on the development of portable power sources utilizing combustion heat. In Europe, TPV application to small-scale residential cogeneration systems is under study. (NEDO)

  14. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost and large-area module manufacturing technologies, and new type amorphous solar cell manufacturing technologies); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu kaihatsu (shingata amorphous taiyo denchi module no seizo gijutsu kaihatsu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    With an objective to put amorphous solar cells for power use into practical use, research and development has been performed on a low-cost mass production technology for modules with large area and less deterioration using film substrates. This paper summarizes the achievements in fiscal 1999. In developing an efficiency enhancing technology, development of an a-Si/a-SiGe/a-SiGe triple cell structure was launched, and discussions were given on band gaps, film forming conditions, and film thickness. In developing a film forming speed enhancing technology, systematic experiments were performed, as well as theoretical analysis on the film forming mechanism in the plasma CVD process. In developing the process technology for film substrate solar cells, with regard to an a-Si production device of the multi-chamber arranged stepping roll system, six plasma CVD chambers were increased to 13 chambers to improve the electrode forming speed and such processes as drilling low-cost substrates, and laser patterning. In trial fabrication of a triple cell, a module in which one row of the SCAF cell is laminated provided an initial efficiency of 9.64%. (NEDO)

  15. New Sunshine Program for fiscal 2000. Development of photovoltaic power system commercialization technology (Development of ultrahigh-efficiency crystalline compound solar cell manufacturing technology - Surveys and studies of peripheral key technologies/Feasibility study of wet-type solar cell commercialization); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu - Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu, Shuhen yoso gijutsu ni kansuru chosa kenkyu - Shissiki taiyo denchi jitsuyoka kanosei chosa

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Dye-sensitized solar cell commercialization was studied for feasibility. Studies were made about photoelectric conversion efficiency and various factors supposedly to affect the life and other properties, and a wet-type (dye-sensitized type) solar cell was fabricated. In an endurance test, the dye-sensitized solar cell retained its initial performance after 3,500 hours of continuous irradiation. A 16 cm{sup 2}-large integrated type Graetzel cell was fabricated, and it achieved a photoelectric conversion efficiency of 4.6%. Furthermore, in the study of Graetzel cells, possibility of the creation of new electrolytic solutions was discussed, a non-TiO{sub 2} dye-sensitized solar cell was fabricated based on the self-assembled electrodeposition of the ZnO dye, and the feasibility was deliberated of a dye-sensitized solar sell using a composite oxide semiconductor. Concerning their development in the future, it was concluded that dye-sensitized solar cells including the Graetzel cell were equipped with the basic characteristics of a next-generation solar cell that would be requested to be low in cost and high in performance. (NEDO)

  16. Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture next-generation thin film solar cells, development of technologies to manufacture CIS solar cell modules, development of technologies to increase high-quality film area; 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Jisedai usumaku taiyo denchi module no seizo gijutsu kaihatsu, CIS taiyo denchi module no seizo gijutsu kaihatsu, kohinshitsumaku no daimensekika gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    With an objective to improve efficiency and reduce cost of CIS-based thin film solar cells, research and development has been made on technologies to increase high-quality CIS film area and technologies to increase speed in the manufacturing process. This paper describes the achievements attained during fiscal 1997. The research covered development of technologies to form high-grade Cu (In, Ga) Se{sub 2} (CIGS) film by using the multi-dimensional deposition process, component technologies for forming a rear electrode, a buffer layer and a transparent electrode, and patterning technologies. As a result of the research, thickness of the CIGS film was reduced to half as much as that of the conventional films, having achieved conversion efficiency of 13.1%, which corresponds to about 90% of the conventional CIGS solar cells. In addition, elucidation was made on the effect of an MoSe{sub 2} layer existing on interface with CIGS/Mo in a CIGS solar cell imposed on solar cell characteristics. In developing an Mo film laser scribing technology, intensity dependence of laser energy was made clear, the energy being required for scribing according to surface condition of the Mo film. (NEDO)

  17. New Sunshine Program for fiscal 2000. Development of photovoltaic power system commercialization technology (Development of ultrahigh-efficiency crystalline compound solar cell manufacturing technology - Surveys and studies of peripheral key technologies/Surveys of ultrahigh-efficiency solar cell application fields); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu - Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu, Shuhen yoso gijutsu ni kansuru chosa kenkyu (Chokokoritsu taiyo denchi tou oyo bunya kaitaku chosa)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Surveys and studies were conducted in order to make propositions concerning the fields of application wherein the merits of ultrahigh-efficiency solar cells would be fully utilized. A questionnaire was held about solar cell application fields, and studies were made about new systems based on the need in the market for specific solar cell goods and capable of supporting their mass diffusion. Proposed as the result was the establishment of a rental (lease) system for photovoltaic power systems, a local photovoltaics advisory system, a market for used photovoltaic power systems, and so forth. In the feasibility study of photovoltaic power generation on unused land in agricultural villages, surveys were conducted concerning energy problems, the energy structure, the actual state of energy consumption, the abandoned farm and its utilization, and so forth. Propositions involving photovoltaic power feasibility were then made, which covered power consumption for greenhouse culture, energy supply for producing methanol out of biomass, power sources for insect incapacitating yellow fluorescent lamps, power sources for livestock barn air-conditioning, power sources for animal excretion treatment, and so forth. (NEDO)

  18. Achievement report for fiscal 1997 on development of technologies for practical photovoltaic system under New Sunshine Program. Manufacture of thin-film solar cell and of low-cost/large-area module (Manufacture of high-reliability CdTe solar module); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    The target is a low-cost CdS/CdTe solar cell of a large area (60cm times 90cm), the establishment of mass-production technologies for the cell, and the enhancement of production efficiency. A thin film formation technology of subjecting CdS film organic metal to pyrolysis is established, which reduces photoabsorption loss in the shortwave domain of wavelength of not longer than 500nm, reduces reflection loss in the film, and improves on short-circuit current density. Improvement is also achieved on CdTe film quality and junction quality by use of a proximity sublimation method in a vacuum, when a conversion rate of 16.0% (1cm{sup 2}) is attained which is the highest in the world. Based on the results of the above-said efforts, a 3.3mm-thick glass substrate is employed for CdTe film to develop into a 30cm times 60cm-large size, with the film thereon uniformly thick over a large area thanks to a normal pressure proximity sublimation method. Studies are made toward a process nearer to the ultimate product and, using the patterning technique, a 30cm times 60cm-large CdTe solar cell is tentatively built realizing a conversion rate of 9.8%. (NEDO)

  19. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of ultrahigh-efficiency crystalline compound solar cell manufacturing technology - Research and survey of peripheral element technologies (Research and survey for development of solar cell of new power generation device structure); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu / shuhen yoso gijutsu ni kansuru chosa kenkyu (shinhatsuden soshi kozo taiyo denchi kaitaku no chosa kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    Attention is paid to behavior at the molecular level with reference taken to the photosynthetic mechanism, and a behavioral mechanism is proposed, which incorporates, in place of the conventional band model, a concept of a molecular structure based on electron transfer, excitation energy transfer, and reactions of oxidation and reduction. Discussion is then made on elements of technology development for the embodiment of high-efficiency organic ferroelectric thin-film solar cells. The elements taken up include the feasibility of organic ferroelectric thin-film cells, photoelctric conversion systems of plants and photosynthetic bacteria, solar cells using donor-acceptor type dyes, organic thin-film solar cells using conductive polymers, and efficient photoexcitation of organic dyes. Fullerene compounds are semiconductive and their band gaps may be controlled to stay within the range of 0.75-1.9eV, and this justifies a hope that they will serve as solar cells. As for TPV (thermophotovoltaic) conversion, it is under development mainly at NASA (National Aeronautics and Space Administration) as a transportable power source based on heat of combustion. Efforts are also being exerted since 1990 in five European countries to develop TPV systems for small-scale cogeneration. (NEDO)

  20. Achievement report for fiscal 1981 on Sunshine Program research and development. Research and development of solar energy technologies (Research and development of SnO{sub 2} solar cells); 1981 nendo taiyo energy gijutsu no kenkyu kaihatsu seika hokokusho. SnO{sub 2} taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-01

    The aim is to establish the technology of manufacturing SnO{sub 2}/nSi solar cells using a low-temperature deposition method and thereby to reduce the cost. A 5cm-diameter wafer is subjected to a batch process, and a large-area, uniform-quality SnO{sub 2} film is obtained. A conversion efficiency of 13.7% is achieved for a single-crystal 9cm{sup 2} cell. As for the conditions of electrode formation, conventional methods are applied for bonding metals, which are Sn, Ni, Zn, etc., for the surface electrode and rear electrode. Vapor deposition is found to be the most excellent. Since it is known that ohmic characteristics improve when Cr is inserted as the base for the surface electrode rear electrodes, it is anticipated that a contact resistance value not inferior to that by vapor deposition will be achieved once the method of Cr bonding, whether by printing or plating, is established. An n-type low-cost polycrystalline Si substrate is subjected to etching under the optimum conditions, and a conversion efficiency of 9.6% is achieved for a 0.5cm{sup 2} cell. An SnO{sub 2} film is formed on a uneven surface for a reduction in the single-crystal cost, when characteristics better than those of a wafer manufactured by surface polishing are realized. Experimentally produced cells are evaluated using a solar simulator, and the result indicates that the electrode forming conditions influence conversion efficiency a great deal. (NEDO)

  1. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  2. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  3. Prospects to solar energy power generation in space. Uchu taiyo hatsuden eno tenbo

    Energy Technology Data Exchange (ETDEWEB)

    Kudo, I. (Electrotechnical Laboratory, Tsukuba (Japan))

    1993-05-01

    Solar energy power generation in space uses large arrays of solar cells developed on a geosynchronous orbit to obtain electric energy, which is transmitted to the earth using microwaves. The idea had already been advocated in 1968, which was followed a decade later by joint discussions done by NASA and DOE. The concept intended to take care of the U.S. power demand by using 60 power plant satellites, each having an output of 5 GW. This expanse of the scale, regarded reasonable even today, calls for the solar cell arrays in space spreading over an area of 10 km [times] 5 km if silicon solar cells with a conversion efficiency of 15% are used, and rectenna on the ground (a received wave converting facility) forming an ellipse of 10 km [times] 13 km (assuming a location at the north latitude of 36[degree]). Although there are a number of problems in the idea such as transportation means to lift construction materials into the space and effect of microwaves on the ionosphere and the ecosystems, the Agency of Industrial Science and Technology organized a 'committee for investigating and studying the space power generation systems' in the fiscal year 1991, and has been moving discussions forward since then. 7 refs., 5 figs.

  4. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  5. New Sunshine Project FY 1996 report on the results of development of photovoltaic power generation system commercialization technologies. Research on commercialization of the technologies for production of thin-film photovoltaic cells (Development of fabrication technologies of high-quality CuInSe{sub 2}-based thin-film solar cells); 1996 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu (kohinshitsuka gijutsu (CuInSe{sub 2} taiyo denchi seizo no gijutsu kaihatsu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    Described herein are the FY 1996 results of development of fabrication technologies for high-quality CuInSe{sub 2}-based photovoltaic cells. The Cu-Ga alloy/In-stacked precursor film is prepared for production of the high-quality thin-film absorber applicable to large-area module fabrication, and selenized by the vapor-phase selenization in a H{sub 2}Se gas atmosphere to produce the thin light-absorbing film in which In and Ga are present at graded concentrations. Increasing Ga alloy content in the CIGS-based thin-film photovoltaic cell fails to widen the forbidden band and improve V{sub oc}, and further optimization works are needed. The method is developed for production of thin-film buffer layer of sulfur-containing Zn compound which can give the cell characteristics equivalent to those of CdS generally used for CIS-based thin-film photovoltaic cell. It is clarified that the photovoltaic cell characteristics can be improved by use of a transparent electroconductive ZnO film of stacked structure, produced by a combination of RF sputtering and DC sputtering. For the patterning technologies necessary for forming series connection on a mini-module, the laser scribing method is applicable to the metal base-electrode, and the mechanical scribing method to the light absorber and window layer. (NEDO)

  6. Achievement report for fiscal 1981 on the development of solar energy technologies for the development of practical application technologies for photovoltaic power systems. Experimental fabrication of solar cell panels and verification thereof (Development of technologies for panel assembly process); 1981 nendo taiyo energy gijutsu kenkyu kaihatsu seika hokokusho (taiyoko hatsuden system jitsuyoka gijutsu kaihatsu). Taiyo denchi panel jikken seisaku kensho (panel kumitate kotei no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-01

    In a study of cell array connection process, continuous and automatic connection of cells is named as the basic concept in view of low cost and high reliability. In the designing of details of cell strings, CZ (Czochralski) cell dimensions are reviewed for cell packaging efficiency improvement, interconnectors and wiring are examined for a easier packaging process, and solder connection is thought over for utility cost reduction. Conditions are established for string fabrication process details. In the study of the panel packaging process, panel package designing is carried out and a dedicated mechanical device is installed. In the study of the inspection process and plant system, data are collected, necessary for the construction and adjustment of an inspection device. Research is conducted on the layout of plant facilities, on required utilities, and on facilities operating state signals to be transmitted to the central control unit. As for an inspection jig supply system, transfer system, and storage rack, they are designed, built, and installed. The plant house is now complete. (NEDO)

  7. Achievement report for fiscal 1981 on New Energy and Industrial Technology Development Organization-entrusted projects. Solar energy technology research and development; solar panel experiment, manufacture, and verification (Photovoltaic power system practical application technology; ribbon-type crystal substrate process technology); 1981 nendo taiyo energy gijutsu kenkyu kaihatsu seika hokokusho (taiyoko hatsuden system jitsuyoka gijutsu kaihatsu). Taiyo denchi panel jikken seisaku kensho (ribon kessho kiban kotei no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-01

    Carried over from the preceding fiscal year are the development of ribbon crystal pulling technology and the studies of ribbon crystal substrate quality and plant operation. In the development of ribbon crystal pulling process, a pulling drive is built and the limiter mechanism is strengthened for improvement on ribbon crystal flatness, technologies are established for high-speed pulling of broad ribbon crystals, pulling system prototype is built, after-annealing technique is improved for eliminating distortion, and technologies are developed for continuous feeding of raw materials. In the quality examination of ribbon crystal substrates, a method is tested and studied for bringing about a decrease in the number of SiC grains. The object of the plant operation study is a plant capable of producing 250kW-equivalent ribbon crystals a year, and the efforts involve the ribbon pulling system, rough cutter, real-size cutter, etching unit, shape checker, packing, devices for production lines such as warehouses for products, electric power, gas, water, peripheral equipment for waste water treatment etc., ribbon specifications check, quality related assistance equipment to deal with unacceptable products etc., pollution-preventing facilities for the preservation of production environments, and plant buildings. (NEDO)

  8. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  9. Summary of reports on 1979 result of Sunshine Project. Solar energy; 1979 nendo sunshine keikaku seika hokokusho gaiyoshu. Taiyo energy

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1980-04-01

    This report is a compilation of all outlines of the results concerning 'solar energy' for which R and D was carried out as a part of Sunshine Project in fiscal 1979. The research subjects (items of the studies) are written below. 1. Solar energy system (measurement of spectral irradiance, utilization system, and meteorological investigation); 2. Solar thermal power generation system; 3. Photovoltaic power generation system (basic research on solar cells, silicon vertical ribbon crystal, silicon horizontal ribbon crystal, particle non-acceleration growth type thin film silicon crystal, particle acceleration growth type thin film silicon crystal, new type solar cells, secondary to quaternary compound semiconductor solar cells, and photovoltaic power generation system); 4. Solar cooling, heating and hot water supply system (evaluation system, newly-built private residential system, existing private residential system, multiple dwelling system, large building system, synthetic resin materials, glass based materials, and metallic materials); 5. Solar energy new utilization method (new power generation system and materials); 6. R and D on solar thermal power generation plant (R and D on pilot plant, experimental research for developing plant on curved surface converging method, and experimental research for developing plant on tower converging method). (NEDO)

  10. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  11. Achievement report for fiscal 1992 on Sunshine Program-entrusted research and development. Research and development of high-efficiency solar cells (Research on forbidden band width optimization); 1992 nendo kokoritsu taiyo denchi no kenkyu kaihatsu seika hokokusho. Kinsei taifuku no saitekika no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1993-03-01

    Research is carried out on technologies concerning CuInSe{sub 2} thin-film solar cell manufacturing, thin film formation, thin film characterization, CdS, (CdZn)S formation, CuInSe{sub 2} single junction, analysis of the a-Si/CuInSe{sub 2} tandem solar cell operating theory, etc. In relation with the encapsulated selenization method for film formation for CuInSe{sub 2} thin-film solar cells, film constitution, film thickness, selenization temperature, etc., are studied for optimization. In relation with the vaporized selenization method, vaporized selenization is tested in a vacuum chamber aiming at improved homogeneity and reproducibility. In research on CdS and (CdZn)S which are window layer materials for CuInSe{sub 2} thin-film solar cells, CdS thin films are formed in a solution growth method using CdSO{sub 4} and (NH{sub 2}){sub 2}CS. In relation with the solution growth of the (CdZn)S crystal film, control of the Zn content in the film is now practicable. In the study of a-Si/CuInSe{sub 2} tandem solar cells, an analytical program is formulated, and calculation is made concerning the impacts of CuInSe{sub 2} forbidden band width and a-Si i-layer thickness. (NEDO)

  12. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system (Development of ultrahigh-efficiency crystalline compound solar cell manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    Tandem type solar cells are developed, in which solar cells with different band gaps are stacked for effectively utilizing optical energy across the entire range of solar spectrum. A material gas supply control device for multiple epitaxial growth was added to a large-area GaAs film epitaxial growth unit, and a film thickness homogeneity of {+-}1% was achieved. A GaInP epitaxial layer fabricated in the same way was also enhanced in homogeneity. A low-carrier concentration layer was inserted into the top cell GaInP p-n junction for the construction of a p-i-n structure, and this improved on the short-circuit current. Furthermore, a p-p-i-n structure was constructed having two emitter layers, and this improved on spectral sensitivity for the achievement of a conversion efficiency of 13.6%. Studies were conducted about the tunnel junction which plays an important role in the stacking of cells, and the tunnel peak current was increased to 7.41A/cm{sup 2}. Fabrication is now under way of a GaInP/GaAs stacked cell, which is expected to exhibit a conversion efficiency of 25% or higher. In the case of a GaInAs cell to serve as the bottom cell, a conversion efficiency of 5.1% was achieved. Consequently, it is safely expected that a 3-junction stack of GaInP/GaAs//GaInAs will exhibit a conversion efficiency of 30% or higher. (NEDO)

  13. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of technologies to manufacture ultra-high efficiency crystalline compound solar cells; 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Research and development has been performed on laminated cells comprising of GaInP/GaAs//GaInAs using poly-element compound semiconductors. This paper summarizes the achievements in fiscal 1999. In developing the technology to manufacture large-area ultra-high efficiency cells, fabrication of 5-cm square GaAs cells was worked on, and a conversion efficiency of 24.7%, which is equivalent or better than that for 1-cm square cell, was achieved by using the epitaxial growth temperature for the GaAs cell structure of 600 degrees C, by adopting the p-on-p structure and by making the electrode thicker by using the plating method. Furthermore, trial fabrication was performed on 5-cm square cells also on GaInAs as the bottom cell. A conversion efficiency of 4.6% was obtained in a 5-cm square cell as a result of high level homogenization of film thickness and composition by optimizing the gas flow in growing GaInAs onto an InP substrate, and using a growth temperature of 550 degrees C. In developing the technology to form GaInP/GaAs laminated cells, discussions were given by using 5-mm square cells on especially improving the GaInP crystallinity and reducing the series resistance in the window layer. GaInP/GaAs-2 bonded lamination cells were fabricated, whereas a conversion efficiency of 19.63% was obtained without using a reflection preventing film. (NEDO)

  14. Change of photovoltaic module conversion efficiency with the environmental factors in different site. Comparison of the conversion efficiency in Tokyo with the one in Nagano; Kotonaru chiten ni okeru taiyo denchi module no shutsuryoku tokusei no henka. Tokyoto Shinjukuku to Naganoken Chinoshi tono hikaku

    Energy Technology Data Exchange (ETDEWEB)

    Higuchi, T.; Tani, T.; Hirata, Y.; Inasaka, T. [Science University of Tokyo, Tokyo (Japan)

    1997-11-25

    Assuming that photovoltaic power systems were installed at two points, Shinjuku Tokyo and Chino Nagano, a study was conducted of difference in generated output of the systems caused by the difference in environmental factors. In the study, it was assumed that two of the photovoltaic power system with rated capacity of 3kW were installed at the two points, and the annual generated output was calculated and compared by the conventional method considering only cell temperature and the output estimation method considering intensity of solar radiation, cell temperature, and spectral distribution of solar radiation. The result of the study was as follows: the difference in output ratio at the two points was 1.7% or lower under the influence of intensity of solar radiation and cell temperature. On the other hand, under the influence of the distribution of spectral solar radiation, the difference is larger than under other environmental factors, 2.4% in polycrystalline Si and 5.5% in amorphous Si. The generated output estimated by the conventional method and the spectral method produced a difference between 81 kWh in Tokyo and 258 kWh in Nagano in amorphous Si. This is because environmental factors such as intensity of solar radiation and distribution of spectral solar radiation are different between the two points. 1 ref., 2 figs., 3 tabs.

  15. Achievement report for fiscal 1991 on Sunshine Program-entrusted research and development. Research and development of high-efficiency solar cells (Research on forbidden band width optimization); 1991 nendo kokoritsu taiyo denchi no kenkyu kaihatsu seika hokokusho. Kinsei taifuku no saitekika no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1992-03-01

    Research is conducted on film formation technologies etc. for the chalcopyritic compound semiconductors represented by CuInSe{sub 2} which is the most excellent of the materials for thin-film solar cells. As for the development of a encapsulated selenization method, research is conducted on an In formation method, temperature program for heat treatment, and Cu-In alloy film selenization, and then a CuInSe{sub 2} film less to suffer phase separation is obtained. In the development of a vaporized selenization method, the reactor tube and the temperature program are improved, and this results in a CuInSe{sub 2} film excellent in homogeneity. As for the evaluation of CuInSe{sub 2} film, photoluminescence is measured using a solid-phase selenized film, vapor-phase selenized film, and 3-source vapor-deposited film, and the result shows that photoluminescence-assisted CuInSe{sub 2} film evaluation is quite promising. In the development of ZnO film formation technologies, the MOCVD (metalorganic chemical vapor deposition) technology is almost complete, and film formation on a 10cm-square substrate is now practical. (NEDO)

  16. FY 1977 Annual report on Sunshine Project results. Research and development of photovoltaic power generation systems. (Research and development of solar cells of II-VI group compound semiconductor); 1977 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. II-VI zoku kagobutsu handotai taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1978-03-31

    This project is aimed at establishment of techniques for pollution-free production of II-VI group compound semiconductor type solar cells. The research items are (1) measures against aging, (2) methods for production of II-VI group compound semiconductors and for forming their joints, and (3) method for assembling solar cell devices.For the item (1), the aging tests are conducted for sintered film type CdS/CdTe solar cells. The C electrode is found to be less aged than the others. The aging tests for the CdS/Cu{sub 2}S cells indicate that it takes 10 years or longer for the performance to be halved under commercial conditions. For the item (2), the sintered film type CdS/CdTe solar cells can be produced by a mass-producible process of screen printing and belt furnace. This production method is promising for producing the solar cells at low cost. For the item (3), it is found that series resistance of the solar cell devices increases as the assembly area increases, resulting in decreased conversion efficiency. The divided structure of the CdTe layer is desired to avoid the above problem. Dividing each unit device increases intrinsic conversion efficiency, but decreases effective power generation area ratio. It is therefore necessary to improve printing precision. (NEDO)

  17. Fiscal 1976 Sunshine Project result report. R and D on photovoltaic power generation system (R and D on 2-6 group compound semiconductor solar cells); 1976 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. 2-6 zoku kagobutsu handotai taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1977-03-31

    This report describes the fiscal 1976 research result on 2-6 group compound semiconductor solar cells for photovoltaic power generation systems. The research aims at the system less than 1/100 in cost. Vapor deposition resulted in failure to obtain high-efficiency cells. Vapor-phase growth revealed Cd-Te single-crystal solar cell is promising, however, resulted in failure to obtain high-efficiency thin film elements. Both chemical deposition and sintering succeeded in mass production of prototype high-efficiency elements equal in performance. However, since chemically deposited CdS film is too thin having higher serial resistance, it requires In{sub 2}O{sub 3} auxiliary transmissive electrodes on glass substrates. Since CdTe film and CdS film also require completely different vapor deposition processes in hetero- junction, chemical deposition is more disadvantageous in cost than sintering. CdTe thin film fabricated by screen printing/sintering is most promising. Since Cd is harmful to human bodies, study was made on pollution preventive measures in its production or use stage, and accidents or fires, obtaining some results. (NEDO)

  18. Achievement report for fiscal 1991 on Sunshine Program-entrusted research and development. Research and development of high-efficiency solar cells (Research on low-temperature film formation technology); 1991 nendo kokoritsu taiyo denchi no kenkyu kaihatsu seika hokokusho. Teion seimaku gijutsu no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1992-03-01

    For the establishment of a low-temperature formation technology for compound semiconductor polycrystalline thin film of CuInSe{sub 2}, research is conducted involving film formation and film quality evaluation using the ICB (ion cluster beam) method. In the research on the film formation, an In-excessive film is placed on a Cu-excessive CuInSe{sub 2} film using the ICB method for the formation of a two-layer film. Bulk CuInSe{sub 2} and thin-film polycrystalline CuInSe{sub 2} are evaluated using PL (photoluminescence) spectrums excited by YAG (yttrium aluminum garnet) and Ar. In both bulk and thin film, it is suspected that clues are latent in the levels deeper than hitherto reported. A luminescent belt of 0.75eV is detected. Changes in film quality before and after oxygen annealing are verified using the YAG-excited and Ar-excited PL spectrums, and the result suggests the feasibility of tracking the process in which the effect of annealing propagates inward from the interfacial surface. Fe-added single-crystal CuInSe{sub 2} is investigated for the optical and photoelectrical effects of Fe impurities. (NEDO)

  19. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Research and development of photovoltaic system evaluation technology (Research, development, and survey of crystalline solar cell evaluation system); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyoko hatsuden system hyoka gijutsu no kenkyu kaihatsu (kesshokei taiyo denchi hyoka system no kenkyu kaihatsu chosa)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    In the basic study of ultrahigh-efficiency cells, the technology of ribbon crystal growing is again attracting attention for shortage of Si material supply. The new technology and problems to solve for cost reduction for it are discussed. Concerning the bulk type crystalline Si which is a core material, recent trends are mentioned involving studies of basic substrate properties such as the photoabsorption coefficient and crystal defects for achieving higher efficiency, development of gettering and surface passivation technologies, enhancement of processing speeds, radiation concentration behavior, etc. Newly obtained findings about photodegradation are mentioned, and some remedial measures are described. Recent reports on the application of porous Si to solar cells are compiled. In connection with the development of low-cost quantity-production process technologies, a remarkable progress recently marked by polycrystalline Si solar cells is described. Furthermore, it is stated that new process technologies will be required in the fields of material refining, substrate manufacturing, and cell fabrication. A proposition is presented aiming at developing cell modules compatible with application systems and practicalizing modules that may be integrated with roofing materials. Reference is also made to surveys overseas. (NEDO)

  20. Fiscal 1974 Sunshine Project result report. R and D on photovoltaic power generation system (R and D on 2-6 group compound semiconductor solar cells); 1974 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. 2-6 zoku kagobutsu handotai taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1975-05-31

    This report summarizes the fiscal 1974 research result on 2- 6 group compound semiconductor solar cells. To obtain a probability of the technology for producing photovoltaic power generation systems at a cost less than 1/100 of those by current technology, this research aims at establishment of the pollution-free production technology of the titled solar cells, and development of an innovative photovoltaic power generation system using such solar cells. The research is composed of (1) study on deterioration mechanism, (2) measures against pollution, and (3) basic study on the production system of such semiconductors. In the 1st research, the analysis result showed that deterioration under solar radiation or by short circuit is derived from an increase in resistance around a positive electrode and a decrease around a junction caused by change in Cu{sub 2}S composition due to migration of Cu ions in a Cu{sub 2}S layer by photo current. In the 2nd research, study was made on preventive technology of Cd pollution. In the 3rd research, basic study was made on the production systems of semiconductors such as sintering, chemical separating and vapor-phase growth for cost reduction. (NEDO)

  1. Fiscal 1999 research and development of technologies for practical application of photovoltaic power generation systems. Development of ultrahigh-efficiency crystalline compound solar cell manufacturing technology; 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Efforts are made to develop a GaInP/GaAs-based compound semiconductor solar cell built on an Si substrate, the Si substrate being lower in cost, higher in mechanical strength, lighter in weight, and higher in heat conductivity than a GaAs or Ge substrate. Fiscal 1999 studies involved improvement on GaAs/Si heteroepitaxial growth and the evaluation of crystallinity in thus grown layers, improvement on cell characteristics, fabrication and evaluation of an n{sup +}/p structure cell, and so forth. As for crystal growing technologies, a 980 degree C 5-heat-cycle annealing method was applied, and the density of dislocation was reduced to 5 times 10{sup 6}cm{sup -2}. In the fabrication of cells, an n{sup +}/p structure cell was studied, and the cell achieved 12.5mAcm{sup -2} in short-circuit photoelectric current over 9mAcm{sup -2} of the conventional p{sup +}/n structure GaInP cell. Without any special effort to optimize the structure, a GaInP/GaAs layer-built cell on a GaAs substrate achieved 23.7% in conversion efficiency. When it is taken into consideration that conversion efficiency on an Si substrate is approximately 80% of what is achieved on a GaAs substrate, it is deemed that the achievement of 23.7% suggests that near 20% in conversion efficiency may become available on an Si substrate. (NEDO)

  2. Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (low-cost Si sheets by continuous casting method); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (renzoku cast ho ni yoru tei cost Si kiban seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on manufacturing of low-cost Si substrates by continuous casting method in fiscal 1994. (1) On manufacturing of ingots of 16 piece size, the ingot of nearly 170kg was manufactured by batch process using the Si melt injection unit prepared in last year. (2) On oxygen and carbon contents in wafers, the contents were measured by FT-IR after slicing of the ingot. As a result, the oxygen and carbon contents could be successfully reduced to the targets of 10ppma and 5ppma or less, respectively. (3) The resistivity distribution of the ingot ranged over the target of 1-2ohm-cm. (4) Cells of 100 {times} 100mm{sup 2} wide and 350{mu}m thick were verified by in-house evaluation process. Although lower cell conversion efficiency was found at the center top of the ingot, a vertical efficiency stability was nearly sufficient as a whole. (5) On the crystal growth unit prepared in fiscal 1994, any problems were not found on automatic driving and vibration during moving. 8 figs.

  3. Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (Over-layered TCO on tempered glass for solar cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (kyoka class fukugo tomei doden kiban seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of over-layered TCO on tempered glass in fiscal 1994. (1) On the fabrication technology of heat-resistant over-layered TCO, thermal deformation of TCO substrates was studied by both experiment and numerical computation. The thermal deformation increased with carrier concentration. As the observation result on change in lattice strain of heated TCO films by high-temperature X-ray diffraction, lattice strain was largely affected by thermal expansion. (2) On development of the low-temperature heat treatment method of TCO films, a technological prospect was obtained for fabrication of low-resistance TCO films by heat treatment without strength deterioration of tempered TCO substrates. (3) On development of cost reduction technology, the large-area CVD equipment was devised on the basis of the inline tempering method which tempers substrate glass by air cooling after formation of SnO2 film as fabrication method of tempered TCO. The TCO substrate tempered by air cooling could endure the drop test of 227g and 1.5m. 5 figs., 1 tab.

  4. Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (low-cost Si substrates); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (usugata takessho kigan seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on manufacturing technologies for low-cost high-quality Si substrates in fiscal 1994. (1) On the 220mm square type electromagnetic casting technology, development of fast stable casting technology was studied using the previously installed 220mm square type electromagnetic casting furnace. As a result, continuous stable casting was achieved at high casting speed up to 3.0mm/min. Any degradation of crystalline quality due to high speed casting was not found. (2) On the 350mm square type electromagnetic casting furnace, oscillation circuit constants were analyzed for design of the power source for No.4 electromagnetic casting furnace. In graphite heating experiment using the 350mm square type water-cooling copper crucible heated by 1000kW high-frequency power source, sufficient heat quantity was obtained for initial melting of Si. Any problems in Si melting were not found through Al block melting test. 6 figs.

  5. Development of technology for thin substrate polycrystalline solar cells for practical use. Development of elementary technologies for low-cost polycrystalline cell modules; Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Takessho cell module tei cost ka yoso gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on development of elementary technologies for low-cost polycrystalline cell modules in fiscal 1994. (1) On development of elementary technologies for mass production, fast surface machining, fast electrode forming and fast forming of junctions and antireflection films were studied. Surface machining by rotating grindstone was studied as fast cutting of fine grooves on Si substrates, resulting in possible fast machining superior in shape accuracy. Electrode properties equivalent or superior to previous ones were obtained by fast electrode forming using a fast printing/sintering equipment even at transfer speed 7.5 times as high as that of conventional methods. Simultaneous fast forming of junctions and antireflection films were achieved by heat treatment after deposition on Si substrate surfaces while heat-decomposing Ti and P compound gas. (2) On development of module structure, an optimum cell group angle, low reflection rate at glass surface, and fast wiring were studied. 5 figs., 2 tabs.

  6. Improvement of the efficiency characteristics on the photovoltaic generation system based on a generation control circuit. Part 3. Research on architectural systematization of energy conversion devices; Dosaten seigyo kairo wo mochiita taiyo denchi hatsuden koritsu no kaizen. 3. Energy henkan no kenchiku system ka ni kansuru kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, T.; Ito, N.; Kimura, G.; Fukao, S.; Sunaga, N.; Tsunoda, M.; Muro, K. [Tokyo Metropolitan University, Tokyo (Japan)

    1996-10-27

    In introducing a photovoltaic power generation system to urban homes, the general practice is to install a large number of solar cell panels on the roof. However, as is often the case, a part of the solar cell panels is in the shadows (partial shadows) of neighboring homes, electric poles, cables and trees. Under the circumstances, studies were made on the numerous changes in the lowered generating capacity of individual solar cells by the partial shadows. Developed by the authors were the generation point control principle, in which the generation point was individually controlled on serially connected plural solar cell modules, and a practical circuit system based on that principle with the effects verified in a field test. In the test, the generated power of the system was 476W without partial shadows, and was 323W with partial shadows and without the operation of the generation point control circuit, increasing to 406W with partial shadows and with the operation of the circuit. As a result, compared with the case where no generation point control circuit was employed, the effectiveness of the proposed circuit was evident. 3 refs., 10 figs., 1 tab.

  7. Method for estimation of the output electric power of PV module with considering environmental factors. Method for estimation of output using I-V curves; Kankyo inshi wo koryoshita taiyo denchi module no shutsuryoku keisanho. I-V tokusei curve ni yoru keisan

    Energy Technology Data Exchange (ETDEWEB)

    Yamagami, Y; Tani, T [Science University of Tokyo, Tokyo (Japan)

    1996-10-27

    Based on the basic quality equation of photovoltaic (PV) cell, a quality equation of PV module has been constructed by considering the spectral distribution of solar radiation and its intensity. A calculation method has been also proposed for determining the output from current-voltage (I-V) curves. Effectiveness of this method was examined by comparing calculated results and observed results. Amorphous Si (a-Si) and polycrystal Si PV modules were examined. By considering the environmental factors, differences of the annual output between the calculated and observed values were reduced from 2.50% to 0.95% for the a-Si PV module, and from 2.52% to 1.24% for the polycrystal Si PV module, which resulted in the reduction more than 50%. For the a-Si PV module, the environmental factor most greatly affecting the annual output was the spectral distribution of solar radiation, which was 3.86 times as large as the cell temperature, and 1.04 times as large as the intensity of solar radiation. For the polycrystal PV module, the environmental factor most greatly affecting the annual output was the cell temperature, which was 7.05 times as large as the spectral distribution of solar radiation, and 1.74 times as large as the intensity of solar radiation. 6 refs., 4 figs., 1 tab.

  8. Fiscal 1999 research and development of technologies for practical application of photovoltaic power generation systems. Development of ultrahigh-efficiency crystalline compound solar cell manufacturing technology (Survey and research on practical application - Volume 1); 1999 nendo taiyoko hatsauden system jitsuyoka gijutsu kaihatsu seika hokokusho. Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu (jitsuyoka kaiseki ni kansuru chosa kenkyu - 1)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    A 'Sub-committee for investigation of crystalline compound semiconductor solar cells' was established with the participation of experts from the industrial, bureaucratic, and academic circles to support the manufacture of ultrahigh-efficiency crystalline compound solar cells, and a survey was conducted about technical trends relating to III-V group compound solar cells. In the study of the trends and tasks of the state of the art technology, it is stated that the III-V group compound semiconductor multi-junction solar cell was steadily improving in efficiency, that the InGaP/GaAs 2-junction cell on a Ge substrate and InGaP/GaAs/Ge 3-junction cell in particular were moving toward mass production, and that the target for the 4-junction cell to achieve was 40% or higher in efficiency. For cost reduction, investigations were made into the heteroepitaxial technology, dimensional enlargement, mass production, raw material cost reduction, feasibility of the polycrystalline thin-film technology, light concentration, etc. For efficiency improvement, boundary layer control, structure designs, etc., were studied. Investigations were also conducted into nitride semiconductors, superlattice construction, etc., which related to new materials for thin films. TPV (thermophotovoltaic) power, etc., were reviewed for their practical application. (NEDO)

  9. Sunshine Program achievement report for fiscal 1981. Research and development of photovoltaic power systems (Research and development of solar cells using II-VI group compound semiconductors); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. II-VI zoku kagobutsu handotai taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-01

    An excellent sintered film is acquired when 0.3% SO{sub 4}{sup 2-} is added to the raw material for the preparation of a CdS film starting material. A CdS film is burned at 600 degrees C, this temperature being lower than the conventional temperature (690 degrees C), and then reburned at the same temperature of 600 degrees C. The resultant device is found low in performance. For the preparation of paste for CdTe film, the material is pulverized into grains of the same size, and this stabilizes device performance. Burning temperatures are also reviewed. Carbon electrodes, Ag-In electrodes, etc., are also reviewed, and 92% of the devices produced under the currently optimum mass production conditions are found to have a conversion efficiency of 4% or higher. The best one is found to exhibit a conversion efficiency of 8.29%. In the study of the method of module constitution, the structure of cross section is improved, the manufacturing process is stabilized, and simplification is carried out. The reliability of the 5 times 10cm{sup 2} substrate device manufactured in this fiscal year is found greatly improved. It is found also that degradation it suffers is attributed to an episode occurring in the interface between CdTe and carbon. A module in which two of the devices manufactured here are connected in series is tested. It exhibits no degradation when exposed to outdoor conditions, but its conversion efficiency is substantially degraded in a moisture test. (NEDO)

  10. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  11. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  12. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  13. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  14. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  15. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  16. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  17. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  18. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  19. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  20. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  1. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  2. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  3. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  4. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  5. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  6. Silicon integrated circuit process

    International Nuclear Information System (INIS)

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  7. Silicon integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  8. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  9. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  10. Joining elements of silicon carbide

    International Nuclear Information System (INIS)

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  11. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  12. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  13. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  14. Silicon microfabricated beam expander

    International Nuclear Information System (INIS)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-01-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

  15. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  16. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  17. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  18. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  19. Study on Silicon detectors

    International Nuclear Information System (INIS)

    Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

    1990-01-01

    Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

  20. Subwavelength silicon photonics

    International Nuclear Information System (INIS)

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  1. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  2. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  3. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  4. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  5. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  6. Spiral silicon drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

  7. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  8. Neuromorphic Silicon Neuron Circuits

    Science.gov (United States)

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

    2011-01-01

    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  9. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  10. Neuromorphic silicon neuron circuits

    Directory of Open Access Journals (Sweden)

    Giacomo eIndiveri

    2011-05-01

    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  11. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  12. The LHCb Silicon Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

    2016-09-21

    The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

  13. Removal of inclusions from silicon

    Science.gov (United States)

    Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

    2009-11-01

    The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

  14. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  15. Silicon Tracking Upgrade at CDF

    International Nuclear Information System (INIS)

    Kruse, M.C.

    1998-04-01

    The Collider Detector at Fermilab (CDF) is scheduled to begin recording data from Run II of the Fermilab Tevatron in early 2000. The silicon tracking upgrade constitutes both the upgrade to the CDF silicon vertex detector (SVX II) and the new Intermediate Silicon Layers (ISL) located at radii just beyond the SVX II. Here we review the design and prototyping of all aspects of these detectors including mechanical design, data acquisition, and a trigger based on silicon tracking

  16. Silicon microphones - a Danish perspective

    DEFF Research Database (Denmark)

    Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

    1998-01-01

    Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

  17. CMS silicon tracker developments

    International Nuclear Information System (INIS)

    Civinini, C.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.D.R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2002-01-01

    The CMS Silicon tracker consists of 70 m 2 of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors

  18. Silicon hybrid integration

    International Nuclear Information System (INIS)

    Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

    2011-01-01

    Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

  19. Strained Silicon Photonics

    Directory of Open Access Journals (Sweden)

    Ralf B. Wehrspohn

    2012-05-01

    Full Text Available A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

  20. Elite silicon and solar power

    International Nuclear Information System (INIS)

    Yasamanov, N.A.

    2000-01-01

    The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

  1. Selective formation of porous silicon

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

    1993-01-01

    A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

  2. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto; Sevilla, Galo T.; Ghoneim, Mohamed T.; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2014-01-01

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100

  3. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  4. OPAL Silicon Tungsten Luminometer

    CERN Multimedia

    OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

  5. Silicon graphene Bragg gratings.

    Science.gov (United States)

    Capmany, José; Domenech, David; Muñoz, Pascual

    2014-03-10

    We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.

  6. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  7. Silicon oxynitride based photonics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

  8. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  9. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  10. DELPHI Silicon Tracker

    CERN Multimedia

    DELPHI was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The silicon tracking detector was nearest to the collision point in the centre of the detector. It was used to pinpoint the collision and catch short-lived particles.

  11. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    International Nuclear Information System (INIS)

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  12. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  13. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  14. The CMS silicon tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2000-01-01

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction

  15. Undepleted silicon detectors

    International Nuclear Information System (INIS)

    Rancoita, P.G.; Seidman, A.

    1985-01-01

    Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

  16. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  17. Amorphous silicon radiation detectors

    Science.gov (United States)

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  18. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Electrometallurgy of Silicon

    Science.gov (United States)

    1988-01-01

    wind, plants, and water impounded in elevated reservoirs. Photovoltaic or solar cells, which convert sunlight directly to electricity, belongs tc, the...on record is that of St. Claire DeVille, who claimed that silicon was produced by electrolysing an impure melt of NaAlC14, but his material did not...this composition and purified melts were electrolysed at about 14500C in graphite crucible and using graphite electrodes. Applied potentials were

  20. Liquid Silicon Pouch Anode

    Science.gov (United States)

    2017-09-06

    Number 15/696,426 Filing Date 6 September 2017 Inventor Charles J. Patrissi et al Address any questions concerning this matter to the...silicon-based anodes during cycling, lithium insertion and deinsertion. Mitigation of this problem has long been sought and will result in improved...design shown. [0032] It will be understood that many additional changes in the details, materials, steps and arrangement of parts, which have been

  1. The CMS silicon tracker

    International Nuclear Information System (INIS)

    D'Alessandro, R.; Biggeri, U.; Bruzzi, M.; Catacchini, E.; Civinini, C.; Focardi, E.; Lenzi, M.; Loreti, M.; Meschini, M.; Parrini, G.; Pieri, M.; Albergo, S.; Boemi, D.; Potenza, R.; Tricomi, A.; Angarano, M.; Creanza, D.; Palma, M. de; Fiore, L.; Maggi, G.; My, S.; Raso, G.; Selvaggi, G.; Tempesta, P.; Azzi, P.; Bacchetta, N.; Bisello, D.; Candelori, A.; Castro, A.; Da Rold, M.; Giraldo, A.; Martignon, G.; Paccagnella, A.; Stavitsky, I.; Babucci, E.; Bartalini, P.; Bilei, G.M.; Checcucci, B.; Ciampolini, P.; Lariccia, P.; Mantovani, G.; Passeri, D.; Santocchia, A.; Servoli, L.; Wang, Y.; Bagliesi, G.; Basti, A.; Bosi, F.; Borello, L.; Bozzi, C.; Castaldi, R.; Dell'Orso, R.; Giassi, A.; Messineo, A.; Palla, F.; Raffaelli, F.; Sguazzoni, G.; Starodumov, A.; Tonelli, G.; Vannini, C.; Verdini, P.G.; Xie, Z.; Breuker, H.; Caner, A.; Elliott-Peisert, A.; Feld, L.; Glessing, B.; Hammerstrom, R.; Huhtinen, M.; Mannelli, M.; Marchioro, A.; Schmitt, B.; Stefanini, G.; Connotte, J.; Gu, W.H.; Luebelsmeyer, K.; Pandoulas, D.; Siedling, R.; Wittmer, B.; Della Marina, R.; Freudenreich, K.; Lustermann, W.; Viertel, G.; Eklund, C.; Karimaeki, V.; Skog, K.; French, M.; Hall, G.; Mc Evoy, B.; Raymond, M.; Hrubec, J.; Krammer, M.; Piperov, S.; Tuuva, T.; Watts, S.; Silvestris, L.

    1998-01-01

    The new silicon tracker layout (V4) is presented. The system aspects of the construction are discussed together with the expected tracking performance. Because of the high radiation environment in which the detectors will operate, particular care has been devoted to the study of the characteristics of heavily irradiated detectors. This includes studies on performance (charge collection, cluster size, resolution, efficiency) as a function of the bias voltage, integrated fluence, incidence angle and temperature. (author)

  2. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  3. Silicon and Civilization,

    Science.gov (United States)

    1980-11-04

    of a diamond. 7. The particular physical and chemical properties of silicon resulted in the fact that in the periodic system it was found in the III...small quantities. Silica is found in blades of grass and grain, in reed and bamboo shoots, where it serves to stiffen the stalk. 2. Diatomite ... properties desired in technology. Quartz glass is very resistant to temperature change since it has a very small coefficient of thermal expansion, is

  4. Porous silicon: silicon quantum dots for photonic applications

    International Nuclear Information System (INIS)

    Pavesi, L.; Guardini, R.

    1996-01-01

    Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

  5. Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

    International Nuclear Information System (INIS)

    Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

    2012-01-01

    Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

  6. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  7. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  8. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  9. Characterization of Czochralski Silicon Detectors

    OpenAIRE

    Luukka, Panja-Riina; Haerkoenen, Jaakko

    2012-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

  10. Achievement Report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Development of technology to manufacture high quality solar cell silicon substrates; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Kohinshitsu taiyo denchiyo silicon kiban seizo gijutsu no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    It is intended to establish an energy saving type mass production technology to manufacture solar cell substrates by using the electromagnetic casting process. This paper describes the achievements in fiscal 1997. Preliminary experiments were performed for high-performance slicing processing and post-slicing rinsing to reduce the cost by enhancing productivity in the slicing process. Since there is a problem of mixing of contaminating raw materials due to diversification in raw materials, resistance and impurity concentration must be determined on each raw material as the materials for the Czochralski method. Then, the raw materials are sorted out referring to the determination results, and they can be used for the electromagnetic casting process upon optimizing them. As a result of having sliced an ingot of 15-cm square with a length of 40 cm by using a mass-production wire saw, an accuracy of 22.8 {mu}m was attained as intra-face variance when the required cutting time was 476 minutes and the substrate thickness is 348 {mu}, thus having obtained prospect for achieving the standard. Development was made on a water jetting rough cleaning machine to separate and remove slurries (oil and grinding particles) from the substrates after slicing, and an arm robot to accommodate substrates into cassettes, which provided processing velocity of 9 second per substrate. A problem of raising the speed remains to be solved. (NEDO)

  11. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  12. Silicon processing for photovoltaics II

    CERN Document Server

    Khattak, CP

    2012-01-01

    The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

  13. New Sunshine Program for fiscal 2000. Development of photovoltaic power system commercialization technology (Development of ultrahigh-efficiency crystalline compound solar cell manufacturing technology - Surveys and studies of peripheral key technologies/Surveys of environmentally-friendliness enhancement for next-generation solar cell development); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu - Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu (Shuhen yoso gijutsu ni kansuru kenkyu chosa, Jisedai taiyodenchi kaihatsu kankyo tekioka chosa)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Though the trends of solar cell development are becoming increasingly diverse across the world, yet none has emerged to promise a stable solar cell supply in the future. Under the circumstances, studies were conducted to clarify strategies for solar cell technology development which would be well adapted to Japan's social environments, with the trends of development in the United States and European countries taken into consideration. The surveys covered the research and development and diffusion of photovoltaic power generation in the United States and European countries, and their solar cell research and development strategies and trends of development were put together. Surveys were also conducted into the research and development of unconventional types of solar cells, such as the dye-sensitized solar cell, organic solar cell, conjugate polymer solar cell, and the polymer/C{sub 60} based solar cell, and into the status of resources of materials for solar cells such as gallium, arsenic, cadmium, tellurium, indium, selenium, and germanium. Regarding the future of photovoltaic power generation research and development, it was concluded that commercialization technology development and basic research and development should continue. Also pointed out was the importance of the enlargement of the market for photovoltaic power generation systems. (NEDO)

  14. New Sunshine Program for fiscal 2000. Development of photovoltaic system commercialization technology - Development of thin-film solar cell manufacturing technology - Development of low-cost/large area module manufacturing technology (Development of novel amorphous solar cell module manufacturing technology); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Shingata amorufasu taiyo denchi mojuru no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Research and development was conducted for the development of amorphous solar cell modules for power generation, high in performance and low in production cost. In the effort to develop high-performance solar cells, optimum device designs including an advanced light confinement structure or the like were studied, and a 25% reduction in the total power generation layer thickness and a 7% increase in efficiency in power generation were consistently achieved in an a-Si/a-SiGe solar cell. In the effort to develop low-cost process technologies, as the result of studies involving the optimization of high-speed film fabrication requirements such as hydrogen dilution and a high-speed/high-precision patterning method and the like, an initial conversion efficiency of 11.2% was attained, which was the world high for a 90 cm times 90 cm-large a-Si/a-SiGe solar cell. This being equivalent to a post-stabilization efficiency of 10%, the fiscal 2000 target was achieved. A solar cell module production cost assessment was performed based on the result, and a module cost of 133 yen/W (in case of 100 MW/year production) was realized, which again meant the achievement of the fiscal 2000 target. (NEDO)

  15. New Sunshine Program for fiscal 2000. Development of photovoltaic power system commercialization technology (Development of ultrahigh-efficiency crystalline compound solar cell manufacturing technology - Surveys and studies of peripheral key technologies/Surveys of environmentally-friendliness enhancement for next-generation solar cell development); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu - Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu (Shuhen yoso gijutsu ni kansuru kenkyu chosa, Jisedai taiyodenchi kaihatsu kankyo tekioka chosa)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Though the trends of solar cell development are becoming increasingly diverse across the world, yet none has emerged to promise a stable solar cell supply in the future. Under the circumstances, studies were conducted to clarify strategies for solar cell technology development which would be well adapted to Japan's social environments, with the trends of development in the United States and European countries taken into consideration. The surveys covered the research and development and diffusion of photovoltaic power generation in the United States and European countries, and their solar cell research and development strategies and trends of development were put together. Surveys were also conducted into the research and development of unconventional types of solar cells, such as the dye-sensitized solar cell, organic solar cell, conjugate polymer solar cell, and the polymer/C{sub 60} based solar cell, and into the status of resources of materials for solar cells such as gallium, arsenic, cadmium, tellurium, indium, selenium, and germanium. Regarding the future of photovoltaic power generation research and development, it was concluded that commercialization technology development and basic research and development should continue. Also pointed out was the importance of the enlargement of the market for photovoltaic power generation systems. (NEDO)

  16. New Sunshine Program for fiscal 2000. Development of photovoltaic system commercialization technology - Development of thin-film solar cell manufacturing technology - Development of low-cost/large area module manufacturing technology (Development of high-reliability CdTe solar cell module manufacturing technology); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Koshinraisei CdTe taiyo denchi mojuru no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Research and development was conducted for reliable CdTe solar cell modules, large in area and high in efficiency. In the study of large-area CdS thin film fabrication, a conversion efficiency of 12.5-14.2% was achieved in a cell in a large-area substrate using a mist method-aided process of continuous CdS film fabrication. In the study of large-area CdTe thin film fabrication, the optimization was studied of the base-forming CdS film fabrication conditions and of the CdTe film fabrication conditions in a method using a CdTe powder processed by dry kneading, and a conversion efficiency peak was found to exist when the CdS film thickness was in the range of 700-900 angstrom. In the fabrication of large-area submodules, a large-area substrate was taken up, and TCO (transparent conducting oxide) film was fabricated by the mist method, CdTe film by the normal pressure CSS method, electrodes by the screen printing method, and CdTe film patterns by the blast method. As the result, a conversion efficiency of 11.0% was achieved. In a cost estimation for large-area CdTe solar cell modules, 140 yen/Wp (conversion efficiency: 11.0%, annual production: 100 MW) was obtained. (NEDO)

  17. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of material/substrate manufacturing technology - Development of high-quality amorphous material/substrate manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / zairyo kiban seizo gijutsu kaihatsu (kohinshitsu amorphous kei zairyo kiban no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    A microcrystalline Si thin film is used to form the i-layer of a narrow gap a-Si based thin film solar cell. Since a microcrystalline p-layer is to act as the seeding crystal layer for the microcrystalline i-layer, it has to be very high in crystallinity and therefore is produced under high hydrogen dilution conditions. In this process, a problem arises of the darkening of the underlying transparent SnO{sub 2} electrode. Since this is due to chemical reaction on the SnO{sub 2} surface layer, blackening is prevented by shortening the film fabrication time, and then an excellently microcrystalline p-layer is obtained. Furthermore, by inserting a microcrystalline i-film buffer layer of low fabrication rate into the p/i boundary, plasma damage on the microcrystalline p-layer is inhibited for the fabrication of a microcrystalline i-layer high in crystallinity at high film fabrication rates. A high Voc is then obtained even when the microcrystalline p-layer is very thin. If the hydrogen dilution rate is too low when the i-layer film fabrication rate is high, the initially fabricated layer turns out to be thick to the detriment of film performance. On the other hand, the p-layer or the buffer layer will be etched when the hydrogen dilution rate is too high. The problem is solved by continuously varying the hydrogen dilution rate from high to low during i-layer fabrication. (NEDO)

  18. Report on achievements in fiscal 1998. Development of technologies to put photovoltaic power generation systems into practical use - Development of solar beam power generation and utilization systems and ancillary technologies (Research and development of new building material integrated solar cell modules - investigation and research on analysis of practical application); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyoko hatsuden riyo system shuhen gijutsu no kenkyu kaihatsu (shinkenzai ittaigata taiyo denchi module no kenkyu kaihatsu (jitsuyoka kaiseki ni kansuru chosa kenkyu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    In order to promote the research to put new building material integrated solar cell modules into practical use, the following items were investigated: (1) functions and specifications for harmonizing with buildings, (2) new module materials that can respond to building materials, (3) marketability, (4) standardization of the assessment methods, (5) consistency with relevant legislation and related institutions, (6) effects on environment as building materials, and (7) investigation on technological trends inside and outside the country. In Item (1), the significance of developing the new building material integrated solar cell modules was made clear. In Item (2), the performance requirements on the currently used module materials were put into order. In Item (3), the market size was investigated, and assignments to establishing the market were put into order, such as the distribution and construction institutions, and assistance to the system introduction. In Item (4), standardization and unification of the assessment methods were discussed, and the items to be standardized were extracted. In Item (6), LCA on the currently used modules was performed. In Item (7), participation was made to the second solar beam power generation conference and EUROSUN '98; investigations were made on trends of developing the new building material integrated solar cell modules and how the recycling related legislation is being progressed; and the achievements in the development activities were confirmed, and the assignments were investigated at the new building material integrated solar cell module subcommittee. (NEDO)

  19. Fiscal 1999 research and development of technologies for practical application of photovoltaic power generation systems. Research and development of photovoltaic power utilizing system and peripheral technologies (Research and development of novel type solar cell module integratable with building materials - Highly durable roof module); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyoko hatsuden riyo system shuhen gijutsu no kenkyu kaihatsu (shinkenzai ittaigata taiyo denchi module no kenkyu kaihatsu - kotaikyusei yane module)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    A thin-film solar array, a large roof panel, and an interconnecting power conditioner are integrated into one and single structural member for the development of a residential photovoltaic power system in which a unit AC (alternating current) output is collected from each panel. In fiscal 1999, in the study of highly durable materials for solar cell modules and of their structure, a thin film compound solar cell module was enlarged to 82cm times 71cm, evaluated for performance, and installed on the third test house. In the study of collecting AC power from the solar cell module, a compact power conditioner for a roof panel which had been in test operation on the roof of the laboratory since 1998 was checked for practical performance, improved, and evaluated for system generation efficiency. In the study of a highly durable roof module structure, problems pertaining to heat radiation from the rear side steel sheet, the burning of the junction box, etc., were solved, and the module passed a verification test under the Building Standard Law. In the validation of the roof module for which power generation performance and meteorological conditions had already been continuously measured for 19 months, it was found that the roof module suffered no troubles such as water leak or deformation. (NEDO)

  20. Report on achievements in fiscal 1998. Development of technologies to put photovoltaic power generation systems into practical use - Development of solar beam power generation and utilization systems and ancillary technologies (Research and development of building material integrated solar cell modules - modules with new multi-layer structure); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyoko hatsuden riyo system shuhen gijutsu no kenkyu kaihatsu (shinkenzai ittaigata taiyo denchi module no kenkyu kaihatsu (shinfukuso kozo module))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    Development is being made on a panel type module that can be used together with an air bubble concrete board (ALC board), and is provided with design characteristics. The development work includes trial fabrication and evaluation of a module with new multi-layer structure, and development of a technology to unitize cells and submodules, and a systematizing method. In the trial fabrication and evaluation, flame retardant and uninflammable modules using fluororesin, and modules with as large area as 4 m{sup 2} were fabricated on a trial basis, in addition to the modules with the basic structure. These modules were given evaluations on such wall material properties as wind pressure resistance, heat and cracking resistance, and fire resistance. In a deformation resistance test considering the integrated use with the ALC board, the developed modules showed a good result. In developing the cells with design characteristics, discussions were given on the inter-cell wiring methods. Development was made on a method to establish a unit structure based on the design and size of a building. In developing the systematization method, the trial fabrication method was applied to a module with lamination structure, a module integrated with the ALC board, and a large-area hollow module to have fabricated the top-light spandrels. (NEDO)

  1. Achievement report for fiscal 1997 on development of technologies for practical photovoltaic system under New Sunshine Program. Manufacture of thin-film solar cell and of low-cost/large-area module (Formation of low-temperature film); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usukau taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu (teion maku keisei gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    A polycrystalline Si thin film formation technology is developed, which uses the flux process in which a reaction occurs between the target crystal and a flux component which is eutectic. Using this process, a crystal grain relatively large in diameter is obtained at a relatively low temperature. This method is now attracting attention as one of the technologies for producing crystalline Si film for use in thin-film polycrystalline Si solar cells. Especially when Al is used for flux, since Al is automatically doped into the target crystalline Si film, it is expected that the resulting film will serve as the ground for a photoactive layer provided with the BSF (back surface field) function which is important for the improvement of solar cell efficiency. A polycrystalline Si thin film is formed on a 2cm times 2cm-large glass substrate at a temperature not higher than 600 degrees C. It is recognized that films selectively oriented towards the (111) or (100) plane are acquired when other processes are employed. It is expected that the said Al-doped film provides a ground on which a BSF function-provided photoactive layer will be formed. (NEDO)

  2. Report on achievements in fiscal 1998. Development of technologies to put photovoltaic power generation systems into practical use - Development of solar beam power generation and utilization systems and ancillary technologies (Research and development of building material integrated solar cell modules - high-durability roof modules); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyoko hatsuden riyo system shuhen gijutsu no kenkyu kaihatsu (shinkenzai ittaigata taiyo denchi module no kenkyu kaihatsu (kotaikyusei yane module))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    With the target set on a system with a roof array efficiency of 8.5%, and a system cost of 170 yen/W, development is being made on a large roof panel and its construction technology, which is capable of AC output by integrating into a large roof panel the compound thin film solar cells having glass/CdS/CdTe/rear air chamber/rear metal, and the inverter. In the cell constituting materials and the structure design, sealants were evaluated, the painting process was developed, and two kinds of structures were prepared. The frameless type has a lamination structure, and a prototype module of 886 times 664 mm was fabricated, and the frame type has a double sealing structure, and a prototype module 600 times 900 mm was fabricated. Prototype modules that can be fixed on a rail type fixing stand were fabricated and constructed, having demonstrated sufficient workability. In addition, a prototype small inverter with system coordination protection was operated actually, and the initial stage malfunctions were corrected. Two demonstration buildings were built, and the whole process was performed from assembly and transportation of the modules and to the installation thereof at the construction site. (NEDO)

  3. Fiscal 1999 research and development of technologies for practical application of photovoltaic power generation systems. Research and development of photovoltaic power utilizing system and peripheral technologies (Research and development of novel type solar cell module integratable with building materials - Novel multilayer structure module); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyoko hatsuden riyo system shuhen gijutsu no kenkyu kaihatsu (shinkenzai ittaigata taiyo denchi module no kenkyu kaihatsu - shinfukuso kozo module)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The project aims to develop solar cell modules of a novel multilayer structure, based on the resin filling structure, hollow structure, and the laminate structure, and integratable with building materials. In fiscal 1999, for the development of cells and submodule structures, cells and submodules were fabricated which were usable with various specimens. In the case of design oriented cells, electrode structures and linkage methods were improved for the enhancement of power generation performance, and a hollow structure and a laminate structure were fabricated. As for the 4m{sup 2}-large module (laminate structure), a specimen with dummy cells arranged along its periphery was fabricated. For cost reduction, a study was made about a module (laminate structure) integrated with an ALC (autoclaved lightweight concrete) board, and the kind of surface glass, cell arrangement, and back sheet types and their respective designs were evaluated. It was then concluded that the module was fit for practical application. The module was then checked for wind endurance in a wind endurance test, for electric characteristics, and for flame inhibition capability in a fire prevention/resistance test. (NEDO)

  4. New Sunshine Program for fiscal 2000. Development of photovoltaic power system commercialization technology (Development of ultrahigh-efficiency crystalline compound solar cell manufacturing technology - Survey and research of analysis of commercialization - Separate Volume: Survey of next-generation ultrahigh-efficiency solar cell system); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu - Chokokoritsu kessho kagobutsu taiyo denchi no seizo gijutsu kaihatsu (Jitsuyoka kaiseki ni kansuru chosa kenkyu - Bessatsu : Jisedai chokokoritsu taiyodenchi system ni kansuru chosa)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    For the preparation of a proposition concerning future research and development, surveys and studies were conducted centering about efficiency enhancement and cost reduction for the next generation ultrahigh-efficiency solar cell system. For improving the efficiency of the crystalline compound solar cell, studies were made about the prospects of the embodiment of a 3-junction and 4-junction types and of an increase in conversion efficiency expected to realize thanks to their light condensation behavior. It was inferred that anticipation of 29-47% conversion efficiency in 1 to 4-joint cells was theoretically acceptable. Four-joint structure cell fabrication would be a challenging task but would bring about an conversion efficiency of approximately 47% thanks to enhanced light condensation capability. As for cost reduction through the use of light condensation technology, surveys of overseas trends showed that the condensation-enhanced photovoltaic power system was characteristically fit for lower-price production. As for condensation and tracking systems, studies were made about cost calculation models of organizations involved in the United States and Europe, and then it was found that cost reduction in the optical system for condensation and in the tracking mechanism would be mandatory for the achievement of 75 yen/W. (NEDO)

  5. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  6. Light emitting structures porous silicon-silicon substrate

    International Nuclear Information System (INIS)

    Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

    1999-01-01

    The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

  7. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  8. Japan`s New Sunshine Project. 1994 annual summary of solar energy R and D program; 1994 nendo new sunshine keikaku. Seika hokokusho gaiyoshu (taiyo energy)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-12-01

    The paper reported the results of fiscal 1994 studies on solar energy in the New Sunshine Project. Relating to the technical development for the practical use of photovoltaic power systems, the development of manufacturing technologies for low-cost substrates and the development of element technology for manufacturing low-cost polycrystalline cells/modules were reported as the development of technology for thin substrate polycrystalline solar cells for practical use. As to the research on fabrication technology for thin film solar cells for practical use, reports were made on the research on low-cost fabrication technology for large-area modules and the technological development for qualitative improvement, etc. In respect to the technological development for super-high efficiency solar cells, reported were the technological development for super-high efficiency single crystalline silicon solar cells and the technological development for crystalline compound solar cells, etc. Concerning the research and development of photovoltaic power systems, reports were on the characterization and control of surface/interface recombination velocity of crystalline silicon thin films and the research on surface passivation for high-efficiency silicon solar cells, etc. In regard to the utilization technology of solar thermal energy, the energy conversion technology using chemical reactions and the development of chemical refrigeration and cold storage systems using solar heat were reported as the research and development of utilization technology of solar thermal systems for industrial use.

  9. The LHCb Silicon Tracker

    CERN Document Server

    Elsasser, Ch; Gallas Torreira, A; Pérez Trigo, A; Rodríguez Pérez, P; Bay, A; Blanc, F; Dupertuis, F; Haefeli, G; Komarov, I; Märki, R; Muster, B; Nakada, T; Schneider, O; Tobin, M; Tran, M T; Anderson, J; Bursche, A; Chiapolini, N; Saornil, S; Steiner, S; Steinkamp, O; Straumann, U; Vollhardt, A; Britsch, M; Schmelling, M; Voss, H; Okhrimenko, O; Pugatch, V

    2013-01-01

    The aim of the LHCb experiment is to study rare heavy quark decays and CP vio- lation with the high rate of beauty and charmed hadrons produced in $pp$ collisions at the LHC. The detector is designed as a single-arm forward spectrometer with excellent tracking and particle identification performance. The Silicon Tracker is a key part of the tracking system to measure the particle trajectories to high precision. This paper reports the performance as well as the results of the radiation damage monitoring based on leakage currents and on charge collection efficiency scans during the data taking in the LHC Run I.

  10. Photovoltaics: sunshine and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Stirzaker, Mike

    2006-05-15

    Spain's photovoltaic sector grew rapidly in 2004 only to slow down in 2005. While a State-guaranteed feed-in tariff is in place to drive a take-off, some of the smaller administrative cogs are buckling under the pressure. Projects are being further slowed by soaring world silicon prices and module shortages. Nevertheless, market volume is higher than ever before, and bio capital from both home and abroad is betting that the Spanish take-off is around the corner. (Author)

  11. Magnetically retained silicone facial prosthesis

    African Journals Online (AJOL)

    2013-06-09

    Jun 9, 2013 ... Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention.

  12. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  13. Radiation hard cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

    2002-01-01

    It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

  14. Recent developments in silicon calorimetry

    International Nuclear Information System (INIS)

    Brau, J.E.

    1990-11-01

    We present a survey of some of the recent calorimeter applications of silicon detectors. The numerous attractive features of silicon detectors are summarized, with an emphasis on those aspects important to calorimetry. Several of the uses of this technology are summarized and referenced. We consider applications for electromagnetic calorimetry, hadronic calorimetry, and proposals for the SSC

  15. Amorphous silicon ionizing particle detectors

    Science.gov (United States)

    Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  16. Flowmeter with silicon flow tube

    NARCIS (Netherlands)

    Lammerink, Theodorus S.J.; Dijkstra, Marcel; Haneveld, J.; Lötters, Joost Conrad

    2009-01-01

    A flowmeter comprising a system chip with a silicon substrate provided on a carrier, in an opening whereof at least one silicon flow tube is provided for transporting a medium whose flow rate is to be measured, said tube having two ends that issue via a wall of the opening into channels coated with

  17. Luneburg lens in silicon photonics.

    Science.gov (United States)

    Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

    2011-03-14

    The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

  18. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  19. Chalcogen donnors in silicon

    International Nuclear Information System (INIS)

    Scolfaro, L.M.R.

    1985-01-01

    The electronic stucture of chalcogen impurities in silicon which give rise to deep levels in the forbidden band gap of that semiconductor is studied. The molecular cluster model within the formalism of the multiple scattering method in the Xα local density approximation was used . The surface orbitals were treated by using the Watson sphere model. Studies were carried out for the isolated substitutional sulfur and selenium impurities (Si:S and Si:Se). A pioneer investigation was performed for the nearest-neighbor impurity pairs of sulfur and selenium (Si:S 2 and Si:Se 2 ). All the systems were also analysed in the positive charge states (Si:S + , Si:Se + and Si:Se 2 + ) and for the isolated impurities the calculations were carried out to the spin polarized limit. The obtained results were used to interpret recent photoconductivity, photocapitance, EPR and DLTS data on these centers. It was observed that the adopted model is able to provide a satisfactory description of the electronic structure of the chalcogen impurity centers in silicon. (autor) [pt

  20. Flexible silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Blakers, A.W.; Armour, T. [Centre for Sustainable Energy Systems, The Australian National University, Canberra ACT 0200 (Australia)

    2009-08-15

    In order to be useful for certain niche applications, crystalline silicon solar cells must be able to sustain either one-time flexure or multiple non-critical flexures without significant loss of strength or efficiency. This paper describes experimental characterisation of the behaviour of thin crystalline silicon solar cells, under either static or repeated flexure, by flexing samples and recording any resulting changes in performance. Thin SLIVER cells were used for the experiment. Mechanical strength was found to be unaffected after 100,000 flexures. Solar conversion efficiency remained at greater than 95% of the initial value after 100,000 flexures. Prolonged one-time flexure close to, but not below, the fracture radius resulted in no significant change of properties. For every sample, fracture occurred either on the first flexure to a given radius of curvature, or not at all when using that radius. In summary, for a given radius of curvature, either the flexed solar cells broke immediately, or they were essentially unaffected by prolonged or multiple flexing. (author)

  1. ATLAS Silicon Microstrip Tracker

    CERN Document Server

    Haefner, Petra; The ATLAS collaboration

    2010-01-01

    The SemiConductor Tracker (SCT), made up from silicon micro-strip detectors is the key precision tracking device in ATLAS, one of the experiments at CERN LHC. The completed SCT is in very good shape: 99.3% of the SCT strips are operational, noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector and observed problems, with stress on the sensor and electronics performance. TWEPP Summary In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton- proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The SemiConductor Tracker (SCT) is the key precision tracking device in ATLAS, made up from silicon micro-strip detectors processed in the planar p-in-n technology. The signal from the strips is processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data i...

  2. Relationship between silicon concentration and creatinine clearance

    International Nuclear Information System (INIS)

    Miura, Y.; Nakai, K.; Itoh, C.; Horikiri, J.; Sera, K.; Sato, M.

    1998-01-01

    Silicon levels in dialysis patients are markedly increasing. Using PIXE we determined the relationship between silicon concentration and creatinine clearance in 30 samples. Urine silicon concentration were significantly correlated to creatinine clearance (p<0.001). And also serum silicon concentration were significantly correlated to creatinine clearance (p<0.0001). (author)

  3. Luminescence of porous silicon doped by erbium

    International Nuclear Information System (INIS)

    Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

    1996-01-01

    The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

  4. Apparatus for making molten silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1988-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  5. Silicon Telescope Detectors

    CERN Document Server

    Gurov, Yu B; Sandukovsky, V G; Yurkovski, J

    2005-01-01

    The results of research and development of special silicon detectors with a large active area ($> 8 cm^{2}$) for multilayer telescope spectrometers (fulfilled in the Laboratory of Nuclear Problems, JINR) are reviewed. The detector parameters are listed. The production of totally depleted surface barrier detectors (identifiers) operating under bias voltage two to three times higher than depletion voltage is described. The possibility of fabrication of lithium drifted counters with a very thin entrance window on the diffusion side of the detector (about 10--20 $\\mu$m) is shown. The detector fabrication technique has allowed minimizing detector dead regions without degradation of their spectroscopic characteristics and reliability during long time operation in charge particle beams.

  6. Silicon radiation detector

    International Nuclear Information System (INIS)

    Benc, I.; Kerhart, J.; Kopecky, J.; Krca, P.; Veverka, V.; Weidner, M.; Weinova, H.

    1992-01-01

    The silicon radiation detector, which is designed for the detection of electrons with energies above 500 eV and of radiation within the region of 200 to 1100 nm, comprises a PIN or PNN + type photodiode. The active acceptor photodiode is formed by a detector surface of shallow acceptor diffusion surrounded by a collector band of deep acceptor diffusion. The detector surface of shallow P-type diffusion with an acceptor concentration of 10 15 to 10 17 atoms/cm 3 reaches a depth of 40 to 100 nm. One sixth to one eighth of the collector band width is overlapped by the P + collector band at a width of 150 to 300 μm with an acceptor concentration of 10 20 to 10 21 atoms/cm 3 down a depth of 0.5 to 3 μm. This band is covered with a conductive layer, of NiCr for instance. (Z.S.)

  7. Zirconates heteroepitaxy on silicon

    Science.gov (United States)

    Fompeyrine, Jean; Seo, Jin Won; Seigwart, Heinz; Rossel, Christophe; Locquet, Jean-Pierre

    2002-03-01

    In the coming years, agressive scaling in CMOS technology will probably trigger the transition to more advanced materials, for example alternate gate dielectrics. Epitaxial thin films are attractive candidates, as long as the difficult chemical and structural issues can be solved, and superior properties can be obtained. Since very few binary oxides can match the electrical, physical and structural requirements which are needed, a combination of those binaries are used here to investigate other lattice matched oxides. We will report on the growth of crystalline zirconium oxide thin films stabilized with different cationic substitutions. All films have been grown in an oxide-MBE system by direct evaporation of the elements on silicon substrates and exposure to molecular or atomic oxygen. The conditions required to obtain epitaxial thin films will be discussed, and successful examples will be presented.

  8. Silicon in cereal straw

    DEFF Research Database (Denmark)

    Murozuka, Emiko

    Silicon (Si) is known to be a beneficial element for plants. However, when plant residues are to be used as feedstock for second generation bioenergy, Si may reduce the suitability of the biomass for biochemical or thermal conversion technologies. The objective of this PhD study was to investigate......, a mutant in Si influx transporter BdLsi1 was identified. BdLsi1 belongs to the major intrinsic protein family. The mutant BdLsi1 protein had an amino acid change from proline to serine in the highly conserved NPA motif. The mutation caused a defect in channeling of Si as well as other substrates...... such as germanium and arsenite. The Si concentration in the mutant plant was significantly reduced by more than 80 %. Rice mutants defective in Si transporters OsLsi1 and OsLsi2 also showed significantly lower straw Si concentration. It is concluded that the quality of straw biomass for bioenergy purposes can...

  9. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  10. Muonium states in silicon carbide

    International Nuclear Information System (INIS)

    Patterson, B.D.; Baumeler, H.; Keller, H.; Kiefl, R.F.; Kuendig, W.; Odermatt, W.; Schneider, J.W.; Estle, T.L.; Spencer, D.P.; Savic, I.M.

    1986-01-01

    Implanted muons in samples of silicon carbide have been observed to form paramagnetic muonium centers (μ + e - ). Muonium precession signals in low applied magnetic fields have been observed at 22 K in a granular sample of cubic β-SiC, however it was not possible to determine the hyperfine frequency. In a signal crystal sample of hexagonal 6H-SiC, three apparently isotropic muonium states were observed at 20 K and two at 300 K, all with hyperfine frequencies intermediate between those of the isotropic muonium centers in diamond and silicon. No evidence was seen of an anisotropic muonium state analogous to the Mu * state in diamond and silicon. (orig.)

  11. Characterization of Czochralski silicon detectors

    OpenAIRE

    Luukka, Panja-Riina

    2006-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

  12. Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

    Institute of Scientific and Technical Information of China (English)

    LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

    2004-01-01

    The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

  13. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    OpenAIRE

    Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

    2016-01-01

    Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

  14. Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

    Directory of Open Access Journals (Sweden)

    Eugenijus SHATKOVSKIS

    2012-09-01

    Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

  15. Radiation resistant passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

    1991-01-01

    This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

  16. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  17. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...

  18. Ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

    2013-12-01

    We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

  19. Vibrational modes of porous silicon

    International Nuclear Information System (INIS)

    Sabra, M.; Naddaf, M.

    2012-01-01

    On the basis of theoretical and experimental investigations, the origin of room temperature photoluminescence (PL) from porous silicon is found to related to chemical complexes constituted the surface, in particular, SiHx, SiOx and SiOH groups. Ab initio atomic and molecular electronic structure calculations on select siloxane compounds were used for imitation of infrared (IR) spectra of porous silicon. These are compared to the IR spectra of porous silicon recorded by using Fourier Transform Infrared Spectroscopy (FTIR). In contrast to linear siloxane, the suggested circular siloxane terminated with linear siloxane structure is found to well-imitate the experimental spectra. These results are augmented with EDX (energy dispersive x-ray spectroscopy) measurements, which showed that the increase of SiOx content in porous silicon due to rapid oxidation process results in considerable decrease in PL peak intensity and a blue shift in the peak position. (author)

  20. Silicon pressure transducers: a review

    International Nuclear Information System (INIS)

    Aceves M, M.; Sandoval I, F.

    1994-01-01

    We present a review of the pressure sensors, which use the silicon piezo resistive effect and micro machining technique. Typical pressure sensors, applications, design and other different structures are presented. (Author)

  1. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  2. Silicon Solar Cell Turns 50

    Energy Technology Data Exchange (ETDEWEB)

    Perlin, J.

    2004-08-01

    This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

  3. Method of forming buried oxide layers in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  4. Silicone nanocomposite coatings for fabrics

    Science.gov (United States)

    Eberts, Kenneth (Inventor); Lee, Stein S. (Inventor); Singhal, Amit (Inventor); Ou, Runqing (Inventor)

    2011-01-01

    A silicone based coating for fabrics utilizing dual nanocomposite fillers providing enhanced mechanical and thermal properties to the silicone base. The first filler includes nanoclusters of polydimethylsiloxane (PDMS) and a metal oxide and a second filler of exfoliated clay nanoparticles. The coating is particularly suitable for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts, boat sails, and inflatable shelters.

  5. Quasimetallic silicon micromachined photonic crystals

    International Nuclear Information System (INIS)

    Temelkuran, B.; Bayindir, Mehmet; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.

    2001-01-01

    We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

  6. Industrial Silicon Wafer Solar Cells

    OpenAIRE

    Neuhaus, Dirk-Holger; Münzer, Adolf

    2007-01-01

    In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future e...

  7. Silicon nanowires: structure and properties

    International Nuclear Information System (INIS)

    Nezhdanov, A.V.; Mashin, A.I.; Razuvaev, A.G.; Ershov, A.V.; Ignatov, S.K.

    2006-01-01

    An attempt to grow silicon nanowires has been made by electron beam evaporation on highly oriented pyrolytic substrate. Needle-like objects are located along the normal to a substrate (density 2 x 10 11 cm -2 ). For modeling quasi-one-dimensional objects calculations of nuclear structure and energy spectra have been accomplished. A fullerene-like structure Si 24 is proposed as a basic atomic configuration of silicon nanowires [ru

  8. Laser tests of silicon detectors

    International Nuclear Information System (INIS)

    Dolezal, Zdenek; Escobar, Carlos; Gadomski, Szymon; Garcia, Carmen; Gonzalez, Sergio; Kodys, Peter; Kubik, Petr; Lacasta, Carlos; Marti, Salvador; Mitsou, Vasiliki A.; Moorhead, Gareth F.; Phillips, Peter W.; Reznicek, Pavel; Slavik, Radan

    2007-01-01

    This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented

  9. Direct Production of Silicones From Sand

    Energy Technology Data Exchange (ETDEWEB)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  10. Enhanced Raman scattering in porous silicon grating.

    Science.gov (United States)

    Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

    2018-03-19

    The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

  11. Silicon Photomultiplier charaterization

    Science.gov (United States)

    Munoz, Leonel; Osornio, Leo; Para, Adam

    2014-03-01

    Silicon Photo Multiples (SiPM's) are relatively new photon detectors. They offer many advantages compared to photo multiplier tubes (PMT's) such as insensitivity to magnetic field, robustness at varying lighting levels, and low cost. The SiPM output wave forms are poorly understood. The experiment conducted collected waveforms of responses of Hamamatsu SiPM to incident laser pulse at varying temperatures and bias voltages. Ambient noise was characterized at all temperatures and bias voltages by averaging the waveforms. Pulse shape of the SiPM response was determined under different operating conditions: the pulse shape is nearly independent of the bias voltage but exhibits strong variation with temperature, consistent with the temperature variation of the quenching resistor. Amplitude of responses of the SiPM to low intensity laser light shows many peaks corresponding to the detection of 1,2,3 etc. photons. Amplitude of these pulses depends linearly on the bias voltage, enabling determination of the breakdown voltage at each temperature. Poisson statistics has been used to determine the average number of detected photons at each operating conditions. Department of Education Grant No. P0315090007 and the Department of Energy/ Fermi National Accelerator Laboratory.

  12. Collimation: a silicon solution

    CERN Multimedia

    2007-01-01

    Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

  13. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift

    2015-06-01

    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

  14. Colloidal characterization of silicon nitride and silicon carbide

    Science.gov (United States)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  15. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

  16. Silicon-micromachined microchannel plates

    International Nuclear Information System (INIS)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

  17. Implantation damage in silicon devices

    International Nuclear Information System (INIS)

    Nicholas, K.H.

    1977-01-01

    Ion implantation, is an attractive technique for producing doped layers in silicon devices but the implantation process involves disruption of the lattice and defects are formed, which can degrade device properties. Methods of minimizing such damage are discussed and direct comparisons made between implantation and diffusion techniques in terms of defects in the final devices and the electrical performance of the devices. Defects are produced in the silicon lattice during implantation but they are annealed to form secondary defects even at room temperature. The annealing can be at a low temperature ( 0 C) when migration of defects in silicon in generally small, or at high temperature when they can grow well beyond the implanted region. The defect structures can be complicated by impurity atoms knocked into the silicon from surface layers by the implantation. Defects can also be produced within layers on top of the silicon and these can be very important in device fabrication. In addition to affecting the electrical properties of the final device, defects produced during fabrication may influence the chemical properties of the materials. The use of these properties to improve devices are discussed as well as the degradation they can cause. (author)

  18. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-01-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart

  19. Porous silicon carbide (SIC) semiconductor device

    Science.gov (United States)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  20. The LHCb Silicon Tracker Project

    International Nuclear Information System (INIS)

    Agari, M.; Bauer, C.; Baumeister, D.; Blouw, J.; Hofmann, W.; Knoepfle, K.T.; Loechner, S.; Schmelling, M.; Pugatch, V.; Bay, A.; Carron, B.; Frei, R.; Jiminez-Otero, S.; Tran, M.-T.; Voss, H.; Adeva, B.; Esperante, D.; Lois, C.; Vasquez, P.; Bernhard, R.P.; Bernet, R.; Ermoline, Y.; Gassner, J.; Koestner, S.; Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D.

    2006-01-01

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry

  1. A silicon tracker for Christmas

    CERN Multimedia

    2008-01-01

    The CMS experiment installed the world’s largest silicon tracker just before Christmas. Marcello Mannelli: physicist and deputy CMS project leader, and Alan Honma, physicist, compare two generations of tracker: OPAL for the LEP (at the front) and CMS for the LHC (behind). There is quite a difference between 1m2 and 205m2.. CMS received an early Christmas present on 18 December when the silicon tracker was installed in the heart of the CMS magnet. The CMS tracker team couldn’t have hoped for a better present. Carefully wrapped in shiny plastic, the world’s largest silicon tracker arrived at Cessy ready for installation inside the CMS magnet on 18 December. This rounded off the year for CMS with a major event, the crowning touch to ten years of work on the project by over five hundred scientists and engineers. "Building a scientific instrument of this size and complexity is a huge technical a...

  2. Belle II silicon vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

    2016-09-21

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

  3. The CMS silicon strip tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Bartalini, P.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Raffaelli, F.; Raso, G.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Wang, Y.; Watts, S.; Wittmer, B.

    1999-01-01

    The Silicon Strip Tracker (SST) is the intermediate part of the CMS Central Tracker System. SST is based on microstrip silicon devices and in combination with pixel detectors and the Microstrip Gas Chambers aims at performing pattern recognition, track reconstruction and momentum measurements for all tracks with p T ≥2 GeV/c originating from high luminosity interactions at √s=14 TeV at LHC. We aim at exploiting the advantages and the physics potential of the precise tracking performance provided by the microstrip silicon detectors on a large scale apparatus and in a much more difficult environment than ever. In this paper we describe the actual SST layout and the readout system. (author)

  4. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  5. Fiscal 1974 Sunshine Project result report. Research on solar energy utilization systems (solar furnace); 1974 nendo taiyo energy riyo system chosa kenkyu. Taiyoro

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1975-03-01

    In fiscal 1974, analysis was made on the concept design of solar furnace hardware, and utilization and use purpose of solar furnaces as high-temperature industrial heat source. Detailed survey was also made on the history of high- temperature solar furnaces. Based on the history of large- scale solar furnaces and the current state of some industries consuming a large amount of thermal energy, wide consideration was made on the applicability of large-scale solar furnaces as heat source in the future. Although various applications of large-scale solar furnaces are expected in the future, their current main applications are production of high-melting point materials, research on high-temperature physical properties, production of silicon, and solar heat power generation. A solar furnace is mainly composed of a parabolic reflector and heliostat plane reflector as optical system. It is necessary for practical industrial use of solar furnaces to study on furnace core design, profitability, installation site, temperature control, and reflector maintenance enough. (NEDO)

  6. The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching

    International Nuclear Information System (INIS)

    Timokhov, D. F.; Timokhov, F. P.

    2009-01-01

    Possible ways for increasing the photoluminescence quantum yield of porous silicon layers have been investigated. The effect of the anodization parameters on the photoluminescence properties for porous silicon layers formed on silicon substrates with different crystallographic orientations was studied. The average diameters for silicon nanoclusters are calculated from the photoluminescence spectra of porous silicon. The influence of the substrate crystallographic orientation on the photoluminescence quantum yield of porous silicon is revealed. A model explaining the effect of the substrate orientation on the photoluminescence properties for the porous silicon layers formed by anode electrochemical etching is proposed.

  7. Surface Effects in Segmented Silicon Sensors

    OpenAIRE

    Kopsalis, Ioannis

    2017-01-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

  8. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  9. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  10. Silicon photonics for multicore fiber communication

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices.......We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

  11. Simulation of atomistic processes during silicon oxidation

    OpenAIRE

    Bongiorno, Angelo

    2003-01-01

    Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 interface is of significant importance in state-of-the-art silicon microelectronics manufacturing. These two topics are intimately coupled and are both addressed in this theoretical investigation mainly through first-principles calculations....

  12. Thermophysical spectroscopy of defect states in silicon

    International Nuclear Information System (INIS)

    Igamberdyev, Kh.T.; Mamadalimov, A.T.; Khabibullaev, P.K.

    1989-01-01

    The present work deals with analyzing the possibilities of using the non-traditional thermophysical methods to study a defect structure in silicon. For this purpose, the temperature dependences of thermophysical properties of defect silicon are investigated. A number of new, earlier unknown physical phenomena in silicon are obtained, and their interpretation has enabled one to establish the main physical mechanisms of formation of deep defect states in silicon

  13. Laser wafering for silicon solar

    International Nuclear Information System (INIS)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-01-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  14. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  15. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  16. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  17. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

    2010-01-01

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  18. Large volume cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Braggio, C.; Boscardin, M.; Bressi, G.; Carugno, G.; Corti, D.; Galeazzi, G.; Zorzi, N.

    2009-01-01

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm 3 , cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  19. Large volume cryogenic silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy); Bressi, G. [INFN sez. di Pavia, via Bassi 6, 27100 Pavia (Italy); Carugno, G.; Corti, D. [INFN sez. di Padova, via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [INFN lab. naz. Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy)

    2009-12-15

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm{sup 3}, cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  20. Production of silicon carbide bodies

    International Nuclear Information System (INIS)

    Parkinson, K.

    1981-01-01

    A body consisting essentially of a coherent mixture of silicon carbide and carbon for subsequent siliconising is produced by casting a slip comprising silicon carbide and carbon powders in a porous mould. Part of the surface of the body, particularly internal features, is formed by providing within the mould a core of a material which retains its shape while casting is in progress but is compressed by shrinkage of the cast body as it dries and is thereafter removable from the cast body. Materials which are suitable for the core are expanded polystyrene and gelatinous products of selected low elastic modulus. (author)

  1. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  2. Radiation damage in silicon detectors

    CERN Document Server

    Lindström, G

    2003-01-01

    Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

  3. High yield silicon carbide prepolymers

    International Nuclear Information System (INIS)

    Baney, R.H.

    1982-01-01

    Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

  4. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  5. Silicon Alloying On Aluminium Based Alloy Surface

    International Nuclear Information System (INIS)

    Suryanto

    2002-01-01

    Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

  6. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans

    2002-01-01

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  7. Engineering piezoresistivity using biaxially strained silicon

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads

    2008-01-01

    of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity...

  8. Process Research on Polycrystalline Silicon Material (PROPSM)

    Science.gov (United States)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  9. ePIXfab - The silicon photonics platform

    NARCIS (Netherlands)

    Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-01-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

  10. Silicon-Based Nanoscale Composite Energetic Materials

    Science.gov (United States)

    2013-02-01

    1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

  11. Process of preparing tritiated porous silicon

    Science.gov (United States)

    Tam, Shiu-Wing

    1997-01-01

    A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

  12. Porous silicon: X-rays sensitivity

    International Nuclear Information System (INIS)

    Gerstenmayer, J.L.; Vibert, Patrick; Mercier, Patrick; Rayer, Claude; Hyvernage, Michel; Herino, Roland; Bsiesy, Ahmad

    1994-01-01

    We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)? ((orig.))

  13. Formation and photoluminescence of "Cauliflower" silicon nanoparticles

    NARCIS (Netherlands)

    Tang, W.; Eilers, J.J.; Huis, van M.A.; Wang, D.; Schropp, R.E.I.; Vece, Di M.

    2015-01-01

    The technological advantages of silicon make silicon nanoparticles, which can be used as quantum dots in a tandem configuration, highly relevant for photovoltaics. However, producing a silicon quantum dot solar cell structure remains a challenge. Here we use a gas aggregation cluster source to

  14. Silicon vertex detector for superheavy elements identification

    Directory of Open Access Journals (Sweden)

    Bednarek A.

    2012-07-01

    Full Text Available Silicon vertex detector for superheavy elements (SHE identification has been proposed. It will be constructed using very thin silicon detectors about 5 μm thickness. Results of test of 7.3 μm four inch silicon strip detector (SSD with fission fragments and α particles emitted by 252Cf source are presented

  15. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Unknown

    carbide ceramics. A K MUKHOPADHYAY. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz.

  16. Ordered silicon nanostructures for silicon-based photonics devices

    Czech Academy of Sciences Publication Activity Database

    Fojtík, A.; Valenta, J.; Pelant, Ivan; Kálal, M.; Fiala, P.

    2007-01-01

    Roč. 5, Suppl. (2007), S250-S253 ISSN 1671-7694 R&D Projects: GA AV ČR IAA1010316 Grant - others:GA MŠk(CZ) ME 933 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystals * silicon * self-assembled monolayers Subject RIV: BM - Solid Matter Physics ; Magnetism

  17. Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

    2001-01-01

    The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

  18. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  19. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  20. Diamond deposition on siliconized stainless steel

    International Nuclear Information System (INIS)

    Alvarez, F.; Reinoso, M.; Huck, H.; Rosenbusch, M.

    2010-01-01

    Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp 2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

  1. Method For Producing Mechanically Flexible Silicon Substrate

    KAUST Repository

    Hussain, Muhammad Mustafa

    2014-08-28

    A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

  2. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  3. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  4. Method For Producing Mechanically Flexible Silicon Substrate

    KAUST Repository

    Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto

    2014-01-01

    A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

  5. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  6. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  7. Dispersion toughened silicon carbon ceramics

    Science.gov (United States)

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  8. Reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Porz, F.

    1982-10-01

    Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 1500 0 C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE) [de

  9. The ARGUS silicon vertex detector

    International Nuclear Information System (INIS)

    Michel, E.; Ball, S.; Ehret, K.; Geyer, C.; Hesselbarth, J.; Hoelscher, A.; Hofmann, W.; Holzer, B.; Huepper, A.; Khan, S.; Knoepfle, K.T.; Seeger, M.; Spengler, J.; Brogle, M.; Horisberger, R.

    1994-01-01

    A silicon microstrip vertex detector has been built as an upgrade to the ARGUS detector for increased precision and efficiency in the reconstruction of decay vertices. This paper discusses the mechanical and electronic design of this device and presents first results from its successful test operation yielding an impact parameter resolution of about 18 μm. ((orig.))

  10. Impurities of oxygen in silicon

    International Nuclear Information System (INIS)

    Gomes, V.M.S.

    1985-01-01

    The electronic structure of oxygen complex defects in silicon, using molecular cluster model with saturation by watson sphere into the formalism of Xα multiple scattering method is studied. A systematic study of the simulation of perfect silicon crystal and an analysis of the increasing of atom number in the clusters are done to choose the suitable cluster for the calculations. The divacancy in three charge states (Si:V 2 + , Si:V 2 0 , Si:V 2 - ), of the oxygen pair (Si:O 2 ) and the oxygen-vacancy pair (Si:O.V) neighbours in the silicon lattice, is studied. Distortions for the symmetry were included in the Si:V 2 + and Si:O 2 systems. The behavior of defect levels related to the cluster size of Si:V 2 0 and Si:O 2 systems, the insulated oxygen impurity of silicon in interstitial position (Si:O i ), and the complexes involving four oxygen atoms are analysed. (M.C.K.) [pt

  11. Seedless electroplating on patterned silicon

    NARCIS (Netherlands)

    Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

    2006-01-01

    Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 μm thick have been deposited using a nickel sulfamate

  12. Aleph silicon microstrip vertex detector

    CERN Multimedia

    Laurent Guiraud

    1998-01-01

    This microstrip vertex locator was located at the heart of the ALEPH experiment, one of the four experiments at the Large Electron-Positron (LEP) collider. In the experiments at CERN's LEP, which ran from 1989 to 2000, modern silicon microvertex detectors, such as those used at ALEPH, monitored the production of short-lived particles close to the beam pipe.

  13. Silicon nanowire hot carrier electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  14. Silicon quantum dots: surface matters

    Czech Academy of Sciences Publication Activity Database

    Dohnalová, K.; Gregorkiewicz, T.; Kůsová, Kateřina

    2014-01-01

    Roč. 26, č. 17 (2014), 1-28 ISSN 0953-8984 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon quantum dots * quantum dot * surface chemistry * quantum confinement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.346, year: 2014

  15. prismane structure by silicon substitution

    Indian Academy of Sciences (India)

    Using the second-order Møller–Plesset perturbation (MP2) theoretic method and the cc-pVDZ basis set, it is shown that with an increase in the number of carbon atoms substituted by silicon, the [6]-prismane structure becomes increasingly more stable, relative to the two isolated benzene (like) structures. A similar trend is ...

  16. Thermal carbonization of nanoporous silicon

    Indian Academy of Sciences (India)

    An interesting phenomenon is observed while carrying out thermal carbonization of porous silicon (PS) with an aim to arrest the natural surface degradation, and it is a burning issue for PS-based device applications. A tubular carbon structure has been observed on the PS surface. Raman, Fourier transform infrared ...

  17. The CDF Silicon Vertex Detector

    International Nuclear Information System (INIS)

    Tkaczyk, S.; Carter, H.; Flaugher, B.

    1993-01-01

    A silicon strip vertex detector was designed, constructed and commissioned at the CDF experiment at the Tevatron collider at Fermilab. The mechanical design of the detector, its cooling and monitoring are presented. The front end electronics employing a custom VLSI chip, the readout electronics and various components of the SVX system are described. The system performance and the experience with the operation of the

  18. The CDF Silicon Vertex Trigger

    International Nuclear Information System (INIS)

    Dell'Orso, Mauro

    2006-01-01

    Motivations, design, performance and ongoing upgrade of the CDF Silicon Vertex Trigger are presented. The system provides CDF with a powerful tool for online tracking with offline quality in order to enhance the reach on B-physics and large P t -physics coupled to b quarks

  19. Microelectromechanical pump utilizing porous silicon

    Science.gov (United States)

    Lantz, Jeffrey W [Albuquerque, NM; Stalford, Harold L [Norman, OK

    2011-07-19

    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  20. Untreated silicone breast implant rupture

    DEFF Research Database (Denmark)

    Hölmich, Lisbet R; Vejborg, Ilse M; Conrad, Carsten

    2004-01-01

    Implant rupture is a well-known complication of breast implant surgery that can pass unnoticed by both patient and physician. To date, no prospective study has addressed the possible health implications of silicone breast implant rupture. The aim of the present study was to evaluate whether untre...

  1. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  2. Silicon photonics: some remaining challenges

    Science.gov (United States)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  3. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  4. Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

    DEFF Research Database (Denmark)

    Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron

    2007-01-01

    The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class...... in the silicon nanocrystal films is dominated by trapping at the Si/SiO2 interface states, occurring on a 1–100 ps time scale depending on particle size and hydrogen passivation......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...

  5. Epitaxial growth of silicon for layer transfer

    Science.gov (United States)

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  6. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  7. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Saharoui; Mughal, Asad Jahangir

    2015-01-01

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  8. Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

    Science.gov (United States)

    Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; Dasari, Durga B. R.; Gerhardt, Ilja; Soykal, Öney O.; Radulaski, Marina; Ohshima, Takeshi; Vučković, Jelena; Son, Nguyen Tien; Ivanov, Ivan G.; Economou, Sophia E.; Bonato, Cristian; Lee, Sang-Yun; Wrachtrup, Jörg

    2018-03-01

    Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3 /2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

  9. A review of oxide, silicon nitride, and silicon carbide brazing

    International Nuclear Information System (INIS)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

  10. Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1998-01-01

    Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

  11. Direct bandgap silicon: tensile-strained silicon nanocrystals

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina; Hapala, Prokop; Valenta, J.; Jelínek, Pavel; Cibulka, Ondřej; Ondič, Lukáš; Pelant, Ivan

    2014-01-01

    Roč. 1, č. 2 (2014), "1300042-1"-"1300042-9" ISSN 2196-7350 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235; GA ČR GAP204/10/0952 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * badstructure * light emission * direct bandgap * surface capping Subject RIV: BM - Solid Matter Physics ; Magnetism

  12. Creep analysis of silicone for podiatry applications.

    Science.gov (United States)

    Janeiro-Arocas, Julia; Tarrío-Saavedra, Javier; López-Beceiro, Jorge; Naya, Salvador; López-Canosa, Adrián; Heredia-García, Nicolás; Artiaga, Ramón

    2016-10-01

    This work shows an effective methodology to characterize the creep-recovery behavior of silicones before their application in podiatry. The aim is to characterize, model and compare the creep-recovery properties of different types of silicone used in podiatry orthotics. Creep-recovery phenomena of silicones used in podiatry orthotics is characterized by dynamic mechanical analysis (DMA). Silicones provided by Herbitas are compared by observing their viscoelastic properties by Functional Data Analysis (FDA) and nonlinear regression. The relationship between strain and time is modeled by fixed and mixed effects nonlinear regression to compare easily and intuitively podiatry silicones. Functional ANOVA and Kohlrausch-Willians-Watts (KWW) model with fixed and mixed effects allows us to compare different silicones observing the values of fitting parameters and their physical meaning. The differences between silicones are related to the variations of breadth of creep-recovery time distribution and instantaneous deformation-permanent strain. Nevertheless, the mean creep-relaxation time is the same for all the studied silicones. Silicones used in palliative orthoses have higher instantaneous deformation-permanent strain and narrower creep-recovery distribution. The proposed methodology based on DMA, FDA and nonlinear regression is an useful tool to characterize and choose the proper silicone for each podiatry application according to their viscoelastic properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

  13. Silicon Nanocrystal Synthesis in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

  14. Synthesis of Silicon Nanocrystals in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

  15. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    Science.gov (United States)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  16. The LHCb Silicon Inner Tracker

    International Nuclear Information System (INIS)

    Sievers, P.

    2002-01-01

    A silicon strip detector has been adopted as baseline technology for the LHCb Inner Tracker system. It consists of nine planar stations covering a cross-shaped area around the LHCb beam pipe. Depending on the final layout of the stations the sensitive surface of the Inner Tracker will be of the order of 14 m 2 . Ladders have to be 22 cm long and the pitch of the sensors should be as large as possible in order to reduce costs of the readout electronics. Major design criteria are material budget, short shaping time and a moderate spatial resolution of about 80 μm. After an introduction on the requirements of the LHCb Inner Tracker we present a description and characterization of silicon prototype sensors. First, laboratory and test beam results are discussed

  17. Macular edema in siliconized eyes

    Directory of Open Access Journals (Sweden)

    Kaya A

    2016-05-01

    Full Text Available Abdullah Kaya,1 Yakup Aksoy,2 Yıldıray Yildirim,3 Murat Sonmez3 1Department of Ophthalmology, Anittepe Military Dispensary, Ankara, Turkey; 2Department of Ophthalmology, Girne Military Hospital, Girne, Cyprus; 3Department of Ophthalmology, GATA Haydarpasa Training Hospital, Istanbul, TurkeyWe read with great interest the article titled “Value of optical coherence tomography in the detection of macular pathology before the removal of silicone oil” by Rashad et al.1 The authors have evaluated the optical coherence tomography (OCT findings before the removal of silicone oil (SiO. We congratulate the authors for this well-organized study and would like to contribute to their findings.View original paper by Rashad and colleagues.

  18. SVX/silicon detector studies

    International Nuclear Information System (INIS)

    Bagby, L.; Johnson, M.; Lipton, R.; Gu, W.

    1995-11-01

    AC coupled silicon detectors, being used for the DO upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present ∼50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3μm), SVXH (rad hard 1.2μm), and SVXIIb (rad soft 1.2μm) amplifier / readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on the detectors. This paper discusses the magnitude of the saturation and a possible solution to the problem

  19. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  20. Coating of silicon pore optics

    DEFF Research Database (Denmark)

    Cooper-Jensen, Carsten P.; Ackermann, M.; Christensen, Finn Erland

    2009-01-01

    For the International X-ray observatory (IXO), a mirror module with an effective area of 3 m2 at 1.25 keV and at least 0.65 m2 at 6 keV has to be realized. To achieve this goal, coated silicon pore optics has been developed over the last years. One of the challenges is to coat the Si plates...

  1. Silicon micropattern detector: a dream

    Energy Technology Data Exchange (ETDEWEB)

    Heijne, E H.M.; Jarron, P; Olsen, A; Redaelli, N

    1988-12-15

    The present use of silicon microstrip detectors in elementary particle physics experiments is described and future needs are evaluated. Possibilities and problems to be encountered in the development of a true two-dimensional detector with intelligent data collection are discussed. This paper serves as an introduction to various other contributions to the conference proceedings, either dealing with futuristic device designs or with cautious steps on the road of technology development.

  2. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  3. Internal friction in irradiated silicon

    International Nuclear Information System (INIS)

    Kalanov, M.U.; Pajzullakhanov, M.S.; Khajdarov, T.; Ummatov, Kh.

    1999-01-01

    The submicroscopic heterogeneities in mono- and polycrystal silicon and the influence of X-ray radiation on them were investigated using the ultrasound resonance method. Disk-shaped samples of 27.5 mm in diameter and 4 mm in thickness, with the flat surface parallel to crystallographic plane (111), were irradiated by X-ray beam of 1 Wt/cm 2 (50 KeV, Mo K α ) during 10 hours. Relations of internal frictions (Q -1 ) of samples and their relative attitude (ψ) - Q -1 (ψ) show that there is a presence of double-humped configuration for monocrystal silicon with the peaks at ψ=900 and 270 degrees. The relations Q -1 (ψ) remain the same after the irradiation. However, the peak width becomes larger. This data show that the configuration and attitude of the heterogeneities remain the same after the irradiation. The double-humped configuration was not discovered for the relations Q -1 (ψ) of polycrystal silicon. It is explained by the fact that there is an isotropic distribution in the content of many blocks and granules

  4. Implantation of boron in silicon

    International Nuclear Information System (INIS)

    Hofker, W.K.

    1975-01-01

    The distribution versus depth of boron implanted in silicon and the corresponding electrical activity obtained after annealing are studied. The boron distributions are measured by secondary-ion mass spectrometry. Boron distributions implanted at energies in the range from 30 keV to 800 keV in amorphous and polycrystalline silicon are analysed. Moments of these distributions are determined by a curve-fitting programme and compared with moments calculated by Winterbon. Boron distributions obtained by implantations along a dense crystallographic direction in monocrystalline silicon are found to have penetrating tails. After investigation of some possible mechanisms of tail formation it is concluded that the tails are due to channelling. It was found that the behaviour of boron during annealing is determined by the properties of three boron fractions consisting of precipitated boron, interstitial boron and substitutional boron. The electrical activity of the boron versus depth is found to be consistent with the three boron fractions. A peculiar redistribution of boron is found which is induced by the implantation of a high dose of heavy ions and subsequent annealing. Different mechanisms which may cause the observed effects, such as thermal diffusion which is influenced by lattice strain and damage, are discussed. (Auth.)

  5. Excimer laser decomposition of silicone

    International Nuclear Information System (INIS)

    Laude, L.D.; Cochrane, C.; Dicara, Cl.; Dupas-Bruzek, C.; Kolev, K.

    2003-01-01

    Excimer laser irradiation of silicone foils is shown in this work to induce decomposition, ablation and activation of such materials. Thin (100 μm) laminated silicone foils are irradiated at 248 nm as a function of impacting laser fluence and number of pulsed irradiations at 1 s intervals. Above a threshold fluence of 0.7 J/cm 2 , material starts decomposing. At higher fluences, this decomposition develops and gives rise to (i) swelling of the irradiated surface and then (ii) emission of matter (ablation) at a rate that is not proportioned to the number of pulses. Taking into consideration the polymer structure and the foil lamination process, these results help defining the phenomenology of silicone ablation. The polymer decomposition results in two parts: one which is organic and volatile, and another part which is inorganic and remains, forming an ever thickening screen to light penetration as the number of light pulses increases. A mathematical model is developed that accounts successfully for this physical screening effect

  6. The DAMPE silicon tungsten tracker

    CERN Document Server

    Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D

    2017-01-01

    The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

  7. Silicon spintronics: Progress and challenges

    International Nuclear Information System (INIS)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-01-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized

  8. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  9. Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

    International Nuclear Information System (INIS)

    Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

    2000-01-01

    In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

  10. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  11. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    International Nuclear Information System (INIS)

    Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

    2015-01-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  12. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  13. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2015-10-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  14. Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

    Science.gov (United States)

    Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

    1991-01-01

    A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

  15. Signal development in irradiated silicon detectors

    CERN Document Server

    Kramberger, Gregor; Mikuz, Marko

    2001-01-01

    This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

  16. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  17. Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

    OpenAIRE

    Wong , S Chien; Ramkissoon , Yashin D; Lopez , Mauricio; Page , Kristopher; Parkin , Ivan P; Sullivan , Paul M

    2009-01-01

    Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

  18. Silicon Processors Using Organically Reconfigurable Techniques (SPORT)

    Science.gov (United States)

    2014-05-19

    AFRL-OSR-VA-TR-2014-0132 SILICON PROCESSORS USING ORGANICALLY RECONFIGURABLE TECHNIQUES ( SPORT ) Dennis Prather UNIVERSITY OF DELAWARE Final Report 05...5a. CONTRACT NUMBER Silicon Processes for Organically Reconfigurable Techniques ( SPORT ) 5b. GRANT NUMBER FA9550-10-1-0363 5c...Contract: Silicon Processes for Organically Reconfigurable Techniques ( SPORT ) Contract #: FA9550-10-1-0363 Reporting Period: 1 July 2010 – 31 December

  19. Silicon wafers for integrated circuit process

    OpenAIRE

    Leroy , B.

    1986-01-01

    Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon, and how, as a result, the quality of silicon wafers evolves. Gettering techniques are then presented. We conclude by detailing the requirements that wafers must satisfy at the incoming inspection.

  20. Silicon nitride-fabrication, forming and properties

    International Nuclear Information System (INIS)

    Yehezkel, O.

    1983-01-01

    This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

  1. Numerical Simulation Of Silicon-Ribbon Growth

    Science.gov (United States)

    Woda, Ben K.; Kuo, Chin-Po; Utku, Senol; Ray, Sujit Kumar

    1987-01-01

    Mathematical model includes nonlinear effects. In development simulates growth of silicon ribbon from melt. Takes account of entire temperature and stress history of ribbon. Numerical simulations performed with new model helps in search for temperature distribution, pulling speed, and other conditions favoring growth of wide, flat, relatively defect-free silicon ribbons for solar photovoltaic cells at economically attractive, high production rates. Also applicable to materials other than silicon.

  2. A study of positron irradiated porous silicon

    International Nuclear Information System (INIS)

    Huang Yuanming; Xue Qing; Zhai Baogai; Xu Aijun; Liu Shewen; Yu Weizhong

    1998-01-01

    The effect of positron irradiation on photoluminescence (PL) of porous silicon has been studied. After four hour positron irradiation, the red PL spectrum of porous silicon blue shifts into greenish spectral region, and a higher energy luminescence band is introduced into this blueshifted spectrum. The fourier transform infrared absorption experiment shows that the positron irradiation can cause further oxidization of porous silicon. A possible mechanism causing this change of PL spectra after positron irradiation is suggested

  3. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  4. Silicon solid state devices and radiation detection

    CERN Document Server

    Leroy, Claude

    2012-01-01

    This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers stateof- the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application.

  5. Porous silicon investigated by positron annihilation

    International Nuclear Information System (INIS)

    Cruz, R.M. de la; Pareja, R.

    1989-01-01

    The effect of the anodic conversion in silicon single crystals is investigated by positron lifetime measurements. Anodization at constant current induces changes in the positron lifetime spectrum of monocrystalline silicon samples. It is found that theses changes are primarily dependent on the silicon resistivity. The annihilation parameter behaviour of anodized samples, treated at high temperature under reducing conditions, is also investigated. The results reveal that positron annihilation can be a useful technique to characterize porous silicon formed by anodizing as well as to investigate its thermal behaviour. (author)

  6. Silicon nanowire-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

    2008-07-23

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

  7. Silicon nanowire-based solar cells

    International Nuclear Information System (INIS)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

    2008-01-01

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

  8. Silicon Micromachined Microlens Array for THz Antennas

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  9. Nanofluidics : Silicon for the perfect membrane

    NARCIS (Netherlands)

    van den Berg, Albert; Wessling, Matthias

    2007-01-01

    Newly developed ultrathin silicon membranes can filter and separate molecules much more effectively than conventional polymer membranes. Many applications, of economic and medical significance, stand to benefit.

  10. Hydrogen passivation of silicon sheet solar cells

    International Nuclear Information System (INIS)

    Tsuo, Y.S.; Milstein, J.B.

    1984-01-01

    Significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60 +- 0.05 mA/cm 2 exhibits a maximum at approximately 1400-eV ion beam energy

  11. Element depth profiles of porous silicon

    International Nuclear Information System (INIS)

    Kobzev, A.P.; Nikonov, O.A.; Kulik, M.; Zuk, J.; Krzyzanowska, H.; Ochalski, T.J.

    1997-01-01

    Element depth profiles of porous silicon were measured on the Van-de-Graaff accelerator in the energy range of 4 He + ions from 2 to 3.2 MeV. Application of complementary RBS, ERD and 16 O(α,α) 16 O nuclear reaction methods permits us to obtain: 1) the exact silicon, oxygen and hydrogen distribution in the samples, 2) the distribution of partial pore concentrations. The oxygen concentration in porous silicon reaches 30%, which allows one to assume the presence of silicon oxide in the pores and to explain the spectrum shift of luminescence into the blue area

  12. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

    2005-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily

  13. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  14. Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, Mohamed Ben; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-06-15

    The effects of antireflection (ARC) and surface passivation films on optoelectronic features of multicrystalline silicon (mc-Si) were investigated in order to perform high efficiency solar cells. A double layer consisting of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride (SiN{sub x}) on porous silicon (PS) was achieved on mc-Si surfaces. It was found that this treatment decreases the total surface reflectivity from about 25% to around 6% in the 450-1100 nm wavelength range. As a result, the effective minority carrier diffusion length, estimated from the Laser-beam-induced current (LBIC) method, was found to increase from 312 {mu}m for PS-treated cells to about 798 {mu}m for SiN{sub x}/PS-treated ones. The deposition of SiN{sub x} was found to impressively enhance the minority carrier diffusion length probably due to hydrogen passivation of surface, grain boundaries and bulk defects. Fourier Transform Infrared Spectroscopy (FTIR) shows that the vibration modes of the highly suitable passivating Si-H bonds exhibit frequency shifts toward higher wavenumber, depending on the x ratio of the introduced N atoms neighbors. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. High breakdown-strength composites from liquid silicone rubbers

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Zakaria, Shamsul Bin; Yu, Liyun

    2014-01-01

    In this paper we investigate the performance of liquid silicone rubbers (LSRs) as dielectric elastomer transducers. Commonly used silicones in this application include room-temperature vulcanisable (RTV) silicone elastomers and composites thereof. Pure LSRs and their composites with commercially...

  16. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  17. Achievement report for fiscal 1983 on Sunshine Program-entrusted survey and research. Cooperative project between Japan and Australia, etc., on solar energy technology (Cooperation between Japan and France on solar energy technology); 1983 nendo Nichigonado taiyo energy gijutsu kyoryoku jigyo seika hokokusho. Nichifutsu taiyo energy gijutsu kyoryoku

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1984-03-01

    This paper reports a survey on solar heat utilization technologies conducted in fiscal 1983 in accordance with a scientific cooperation agreement signed by the Japanese Government and the French Government. The survey was carried out by two employees with the solar technology development office of the New Energy and Industrial Technology Development Organization who were dispatched to France on a tour in the period March 13-24. Concerning the 'French Photovoltaic Program 1982-1986,' knowledge on the goal of the program, long-term research and development, and budgetary matters were obtained at the AFME (French Energy Management Agency) head office and its branches. Relations of AFME with EC (European Community) projects were clarified. The photovoltaic power system (50kW) of Nice Airport is one of the EC projects, and was built thanks to financial aids by EC and AFME. The power system is now in service as a power source for electronic equipment in the airport management building and for taxi lights installed on the ground. The CGE (Compagnie General d'Electricite) central laboratory and the Rhone Poulenc Specialites Chimique were visited, when information on the research and development of a ribbon crystal pulling process and solar-grade silicon was acquired. (NEDO)

  18. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  19. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Zahra Ostadmahmoodi Do

    2016-06-01

    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  20. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

    1991-07-01

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  1. Silicon Nano-Photonic Devices

    DEFF Research Database (Denmark)

    Pu, Minhao

    with the couplers, a silicon ridge waveguide is utilized in nonlinear all-optical signal processing for optical time division multiplexing (OTDM) systems. Record ultra-highspeed error-free optical demultiplexing and waveform sampling are realized and demonstrated for the rst time. Microwave phase shifters and notch...... lters based on tunable microring resonators are proposed and analyzed. Based on a single microring resonator, a maximum radio frequency (RF) phase shift of 336degrees is obtained, but with large power variation. By utilizing a dual-microring resonator, a RF phase shifting range larger than 2pi...

  2. Electronic structure of silicon superlattices

    International Nuclear Information System (INIS)

    Krishnamurthy, S.; Moriarty, J.A.

    1984-01-01

    Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon

  3. Silicone cushions for engineering applications

    International Nuclear Information System (INIS)

    Anon.

    1984-01-01

    When a complex system composed of materials of very different properties is subjected to varying temperature, differential thermal expansion and contraction will produce intolerable stresses unless the parts are separated by suitable cushions. In addition to accommodating differential thermal expansion and contraction, these cushions must absorb shock and vibration, take up dimensional tolerances in the parts, and distribute and attenuate applied loads. We are studying cellular silicone cushions, starting with raw materials and polymer manufacture, to analysis of mechanical and chemical properties, through short- and long-term life testing, in order to tailor cushions to various specific engineering requirements

  4. A monolithic silicon detector telescope

    International Nuclear Information System (INIS)

    Cardella, G.; Amorini, F.; Cabibbo, M.; Di Pietro, A.; Fallica, G.; Franzo, G.; Figuera, P.; Papa, M.; Pappalardo, G.; Percolla, G.; Priolo, F.; Privitera, V.; Rizzo, F.; Tudisco, S.

    1996-01-01

    An ultrathin silicon detector (1 μm) thick implanted on a standard 400 μm Si-detector has been built to realize a monolithic telescope detector for simultaneous charge and energy determination of charged particles. The performances of the telescope have been tested using standard alpha sources and fragments emitted in nuclear reactions with different projectile-target colliding systems. An excellent charge resolution has been obtained for low energy (less than 5 MeV) light nuclei. A multi-array lay-out of such detectors is under construction to charge identify the particles emitted in reactions induced by low energy radioactive beams. (orig.)

  5. Silicone foam for penetration seal

    International Nuclear Information System (INIS)

    Hoshino, Yoshikazu

    1986-01-01

    In nuclear power plants or general buildings, it is very important to form a fire-resistant seal around cables, cable trays and conduits passing through a wall or a floor. Rockwool, asbestos, glasswool and flame-retarded urethane foam have so far been used for these purposes. However, they were not satisfactory in sealing property, workability and safety. The silicone foam newly developed, ''TOSSEAL'' 300, has cleared these defects. It has now come to be used for fire resistant seal in nuclear power plants. (author)

  6. Fracture dynamics in implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Massy, D.; Tardif, S.; Penot, J. D.; Ragani, J.; Rieutord, F. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, INAC-SP2M, F-38000 Grenoble (France); Mazen, F.; Madeira, F. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Landru, D.; Kononchuk, O. [SOITEC, Parc Technologique des Fontaines, 38190 Bernin (France)

    2015-08-31

    Crack propagation in implanted silicon for thin layer transfer is experimentally studied. The crack propagation velocity as a function of split temperature is measured using a designed optical setup. Interferometric measurement of the gap opening is performed dynamically and shows an oscillatory crack “wake” with a typical wavelength in the centimetre range. The dynamics of this motion is modelled using beam elasticity and thermodynamics. The modelling demonstrates the key role of external atmospheric pressure during crack propagation. A quantification of the amount of gas trapped inside pre-existing microcracks and released during the fracture is made possible, with results consistent with previous studies.

  7. Imaging monolithic silicon detector telescopes

    International Nuclear Information System (INIS)

    Amorini, F.; Sipala, V.; Cardella, G.; Boiano, C.; Carbone, B.; Cosentino, L.; Costa, E.; Di Pietro, A.; Emanuele, U.; Fallica, G.; Figuera, P.; Finocchiaro, P.; La Guidara, E.; Marchetta, C.; Pappalardo, A.; Piazza, A.; Randazzo, N.; Rizzo, F.; Russo, G.V.; Russotto, P.

    2008-01-01

    We show the results of some test beams performed on a new monolithic strip silicon detector telescope developed in collaboration with the INFN and ST-microelectronics. Using an appropriate design, the induction on the ΔE stages, generated by the charge released in the E stage, was used to obtain the position of the detected particle. The position measurement, together with the low threshold for particle charge identification, allows the new detector to be used for a large variety of applications due to its sensitivity of only a few microns measured in both directions

  8. Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

    International Nuclear Information System (INIS)

    Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

    2012-01-01

    In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

  9. Simple Approach to Superamphiphobic Overhanging Silicon Nanostructures

    DEFF Research Database (Denmark)

    Kumar, Rajendra; Mogensen, Klaus Bo; Bøggild, Peter

    2010-01-01

    with contact angles up to 152 degrees and roll-off angle down to 8 degrees. Such nonlithographic nanoscale overhanging Structures can also be added to silicon nanograss by deposition of a thin SiO2 layer, which equips the silicon rods with 100-300 nm sized overhanging Structures. This is a simple, fast...

  10. The Solenoidal Detector Collaboration silicon detector system

    International Nuclear Information System (INIS)

    Ziock, H.J.; Gamble, M.T.; Miller, W.O.; Palounek, A.P.T.; Thompson, T.C.

    1992-01-01

    Silicon tracking systems will be fundamental components of the tracking systems for both planned major SSC experiments. Despite its seemingly small size, it occupies a volume of more than 5 meters in length and 1 meter in diameter and is an order of magnitude larger than any silicon detector system previously built. This report discusses its design and operation

  11. Case Report: Magnetically retained silicone facial prosthesis ...

    African Journals Online (AJOL)

    Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention. Key words: Magnet ...

  12. Broadband Nonlinear Signal Processing in Silicon Nanowires

    DEFF Research Database (Denmark)

    Yvind, Kresten; Pu, Minhao; Hvam, Jørn Märcher

    The fast non-linearity of silicon allows Tbit/s optical signal processing. By choosing suitable dimensions of silicon nanowires their dispersion can be tailored to ensure a high nonlinearity at power levels low enough to avoid significant two-photon abso We have fabricated low insertion...

  13. Radiation cured and monomer modified silicon elastomers

    International Nuclear Information System (INIS)

    Eldred, R.J.

    1979-01-01

    A method is described for the production of a tear resistant silicone elastomer, which has improved elongation properties. This elastomer is the radiation induced reaction product of a noncured methyl vinyl silicone resin (VMQ) and uniformly dispersed therein a blend of a polyfunctional acrylic crosslinking monomer and a filler

  14. Low surface damage dry etched black silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

    2017-01-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface dam...

  15. Mechanism of single atom switch on silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Stokbro, Kurt; Thirstrup, C.

    1998-01-01

    We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias...

  16. Silicon drift detectors, present and future prospects

    Science.gov (United States)

    Takahashi, J.; Bellwied, R.; Beuttenmuller, R.; Caines, H.; Chen, W.; Dyke, H.; Hoffmann, G. W.; Humanic, T.; Kotov, I.; Kuczewski, P.; Leonhardt, W.; Li, Z.; Lynn, D.; Minor, R.; Munhoz, M.; Ott, G.; Pandey, S. U.; Schambach, J.; Soja, R.; Sugarbaker, E.; Willson, R. M.

    2001-04-01

    Silicon drift detectors provide unambiguous two-dimensional position information for charged particle detection with a single detector layer. A large area silicon drift detector was developed for the inner tracking detector of the STAR experiment at RHIC. In this paper, we discuss the lessons learned and the future prospects of this technology.

  17. Challenges in amorphous silicon solar cell technology

    NARCIS (Netherlands)

    Swaaij, van R.A.C.M.M.; Zeman, M.; Korevaar, B.A.; Smit, C.; Metselaar, J.W.; Sanden, van de M.C.M.

    2000-01-01

    Hydrogenated amorphous silicon is nowadays extensively used for a range of devices, amongst others solar cells, Solar cell technology has matured over the last two decades and resulted in conversion efficiencies in excess of 15%. In this paper the operation of amorphous silicon solar cells is

  18. Phosphorous Doping of Nanostructured Crystalline Silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Davidsen, Rasmus Schmidt; Steckel, André

    Nano-textured silicon, known as black silicon (bSi), is attractive with excellent photon trapping properties. bSi can be produced using simple one-step fabrication reactive ion etching (RIE) technique. However, in order to use bSi in photovoltaics doping process should be developed. Due to high s...

  19. Oblique patterned etching of vertical silicon sidewalls

    Science.gov (United States)

    Bruce Burckel, D.; Finnegan, Patrick S.; David Henry, M.; Resnick, Paul J.; Jarecki, Robert L.

    2016-04-01

    A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.

  20. Optical and microstructural investigations of porous silicon

    Indian Academy of Sciences (India)

    Raman scattering and photoluminescence (PL) measurements on (100) oriented -type crystalline silicon (-Si) and porous silicon (PS) samples were carried out. PS samples were prepared by anodic etching of -Si under the illumination of light for different etching times of 30, 60 and 90 min. Raman scattering from the ...

  1. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

    2011-01-01

    While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...

  2. Silicon nanostructures produced by laser direct etching

    DEFF Research Database (Denmark)

    Müllenborn, Matthias; Dirac, Paul Andreas Holger; Petersen, Jon Wulff

    1995-01-01

    A laser direct-write process has been applied to structure silicon on a nanometer scale. In this process, a silicon substrate, placed in a chlorine ambience, is locally heated above its melting point by a continuous-wave laser and translated by high-resolution direct-current motor stages. Only...

  3. A continuous Czochralski silicon crystal growth system

    Science.gov (United States)

    Wang, C.; Zhang, H.; Wang, T. H.; Ciszek, T. F.

    2003-03-01

    Demand for large silicon wafers has driven the growth of silicon crystals from 200 to 300 mm in diameter. With the increasing silicon ingot sizes, melt volume has grown dramatically. Melt flow becomes more turbulent as melt height and volume increase. To suppress turbulent flow in a large silicon melt, a new Czochralski (CZ) growth furnace has been designed that has a shallow melt. In this new design, a crucible consists of a shallow growth compartment in the center and a deep feeding compartment around the periphery. Two compartments are connected with a narrow annular channel. A long crystal may be continuously grown by feeding silicon pellets into the dedicated feeding compartment. We use our numerical model to simulate temperature distribution and velocity field in a conventional 200-mm CZ crystal growth system and also in the new shallow crucible CZ system. By comparison, advantages and disadvantages of the proposed system are observed, operating conditions are determined, and the new system is improved.

  4. Fabricating solar cells with silicon nanoparticles

    Science.gov (United States)

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  5. Electrochemical properties of ion implanted silicon

    International Nuclear Information System (INIS)

    Pham minh Tan.

    1979-11-01

    The electrochemical behaviour of ion implanted silicon in contact with hydrofluoric acid solution was investigated. It was shown that the implanted layer on silicon changes profoundly its electrochemical properties (photopotential, interface impedance, rest potential, corrosion, current-potential behaviour, anodic dissolution of silicon, redox reaction). These changes depend strongly on the implantation parameters such as ion dose, ion energy, thermal treatment and ion mass and are weakly dependent on the chemical nature of the implantation ion. The experimental results were evaluated and interpreted in terms of the semiconductor electrochemical concepts taking into account the interaction of energetic ions with the solid surface. The observed effects are thus attributed to the implantation induced damage of silicon lattice and can be used for profiling of the implanted layer and the electrochemical treatment of the silicon surface. (author)

  6. An improved method of preparing silicon carbide

    International Nuclear Information System (INIS)

    Baney, R.H.

    1979-01-01

    A method of preparing silicon carbide is described which comprises forming a desired shape from a polysilane of the average formula:[(CH 3 ) 2 Si][CH 3 Si]. The polysilane contains from 0 to 60 mole percent (CH 3 ) 2 Si units and from 40 to 100 mole percent CH 3 Si units. The remaining bonds on the silicon are attached to another silicon atom or to a halogen atom in such manner that the average ratio of halogen to silicon in the polysilane is from 0.3:1 to 1:1. The polysilane has a melt viscosity at 150 0 C of from 0.005 to 500 Pa.s and an intrinsic viscosity in toluene of from 0.0001 to 0.1. The shaped polysilane is heated in an inert atmosphere or in a vacuum to an elevated temperature until the polysilane is converted to silicon carbide. (author)

  7. Micro benchtop optics by bulk silicon micromachining

    Science.gov (United States)

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  8. Micromachined silicon seismic accelerometer development

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Montague, S. [and others

    1996-08-01

    Batch-fabricated silicon seismic transducers could revolutionize the discipline of seismic monitoring by providing inexpensive, easily deployable sensor arrays. Our ultimate goal is to fabricate seismic sensors with sensitivity and noise performance comparable to short-period seismometers in common use. We expect several phases of development will be required to accomplish that level of performance. Traditional silicon micromachining techniques are not ideally suited to the simultaneous fabrication of a large proof mass and soft suspension, such as one needs to achieve the extreme sensitivities required for seismic measurements. We have therefore developed a novel {open_quotes}mold{close_quotes} micromachining technology that promises to make larger proof masses (in the 1-10 mg range) possible. We have successfully integrated this micromolding capability with our surface-micromachining process, which enables the formation of soft suspension springs. Our calculations indicate that devices made in this new integrated technology will resolve down to at least sub-{mu}G signals, and may even approach the 10{sup -10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  9. The DOe Silicon Track Trigger

    International Nuclear Information System (INIS)

    Steinbrueck, Georg

    2003-01-01

    We describe a trigger preprocessor to be used by the DOe experiment for selecting events with tracks from the decay of long-lived particles. This Level 2 impact parameter trigger utilizes information from the Silicon Microstrip Tracker to reconstruct tracks with improved spatial and momentum resolutions compared to those obtained by the Level 1 tracking trigger. It is constructed of VME boards with much of the logic existing in programmable processors. A common motherboard provides the I/O infrastructure and three different daughter boards perform the tasks of identifying the roads from the tracking trigger data, finding the clusters in the roads in the silicon detector, and fitting tracks to the clusters. This approach provides flexibility for the design, testing and maintenance phases of the project. The track parameters are provided to the trigger framework in 25 μs. The effective impact parameter resolution for high-momentum tracks is 35 μm, dominated by the size of the Tevatron beam

  10. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  11. Radiation cured silicone rubber articles

    International Nuclear Information System (INIS)

    DuPont, J.G.; Goodwin, P.A.

    1984-01-01

    A process for making radiation cured silicone rubber articles is disclosed wherein a hydroxyl-terminated polysilaxane having a molecular weight from about 50,000 to about 2,000,000, optionally modified by mixing with up to 85% of an end-stopped silicone rubber, is mixed with from about 10 to about 70 parts per hundred of rubber of a finely divided silica filler with a particle size in the reinforcing range and other inert fillers as determined by desired final properties; the composition so prepared is formed into the desired shape at room temperature; the article so formed is precured to improve the mechanical properties of the material with which it is made by exposure to ammonia gas, ammonium hydroxide, or to the vapors or solutions of a volatile amine at room temperature; and the precured article is irradiated with high energy electrons or gamma radiation to effect a permanent cure of the material from which the article is formed

  12. A CMOS silicon spin qubit

    Science.gov (United States)

    Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

    2016-11-01

    Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

  13. Low cost silicon solar array project large area silicon sheet task: Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

    1977-01-01

    Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

  14. Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

    CERN Document Server

    Tarnavskij, G A; Obrekht, M S

    2001-01-01

    One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

  15. Comparison of confinement characters between porous silicon and silicon nanowires

    International Nuclear Information System (INIS)

    Tit, Nacir; Yamani, Zain H.; Pizzi, Giovanni; Virgilio, Michele

    2011-01-01

    Confinement character and its effects on photoluminescence (PL) properties are theoretically investigated and compared between porous silicon (p-Si) and silicon nanowires (Si-NWs). The method is based on the application of the tight-binding technique using the minimal sp 3 -basis set, including the second-nearest-neighbor interactions. The results show that the quantum confinement (QC) is not entirely controlled by the porosity, rather it is mainly affected by the average distance between pores (d). The p-Si is found to exhibit weaker confinement character than Si-NWs. The confinement energy of charge carriers decays against d exponentially for p-Si and via a power-law for Si-NWs. This latter type of QC is much stronger and is somewhat similar to the case of a single particle in a quantum box. The excellent fit to the PL data demonstrates that the experimental samples of p-Si do exhibit strong QC character and thus reveals the possibility of silicon clustering into nano-crystals and/or nanowires. Furthermore, the results show that the passivation of the surface dangling bonds by the hydrogen atoms plays an essential role in preventing the appearance of gap states and consequently enhances the optical qualities of the produced structures. The oscillator strength (OS) is found to increase exponentially with energy in Si-NWs confirming the strong confinement character of carriers. Our theoretical findings suggest the existence of Si nanocrystals (Si-NCs) of sizes 1-3 nm and/or Si-NWs of cross-sectional sizes in the 1-3 nm range inside the experimental p-Si samples. The experimentally-observed strong photoluminescence from p-Si should be in favor of an exhibition of 3D-confinement character. The favorable comparison of our theoretical results with the experimental data consolidates our above claims. -- Highlights: → Tight-binding is used to study quantum-confinement (QC) effects in p-Si and Si-NWs. → QC is not entirely controlled by the porosity but also by the d

  16. Reports on 1979 result of Sunshine Project. Investigation and research on solar energy utilization system (solar thermal power generation system); 1979 nendo taiyo energy riyo system chosa kenkyu. Taiyoko hatsuden system

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1980-03-01

    In connection with the practicability of a solar thermal power generation system, examination was made on the technical economic problems and the operation method as well as on the problems of required performance of the constituent equipment, with the measuring method and performance evaluation method examined that are suitable for various devices. The items for the examination are as follows: (1) Silicon as the raw material for solar cells and its R and D, (2) Amorphous silicon solar cells, (3) R and D on low cost solar cells and array, (4) Basic design for photovoltaic generation system, and (5) Problems and technical subjects for solar cell standard measurement. The research themes and items for the above examination are listed as below: (1) Demand trend for raw material silicon, overseas trend, and development plan for polycrystalline silicon; (2) R and D plan for amorphous Si solar cell and its system, their optimum design, and their cost analysis and economic effect; (3) Technological investigation on cells and examination on array; (4) Basic design, peripheral equipment for system, and development schedule; (5) Report on the first actual state investigation concerning instrumentation of solar cells, i.e., on 'instrumentation and deviation in transformation efficiency', calibration system, problems of instrumentation of new device, problems of reliability test method, situation in various countries, and trend in atmospheric turbidimeter. (NEDO)

  17. Reports on 1979 result of Sunshine Project. Investigation and research on solar energy utilization system (solar thermal power generation system); 1979 nendo taiyo energy riyo system chosa kenkyu. Taiyoko hatsuden system

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1980-03-01

    In connection with the practicability of a solar thermal power generation system, examination was made on the technical economic problems and the operation method as well as on the problems of required performance of the constituent equipment, with the measuring method and performance evaluation method examined that are suitable for various devices. The items for the examination are as follows: (1) Silicon as the raw material for solar cells and its R and D, (2) Amorphous silicon solar cells, (3) R and D on low cost solar cells and array, (4) Basic design for photovoltaic generation system, and (5) Problems and technical subjects for solar cell standard measurement. The research themes and items for the above examination are listed as below: (1) Demand trend for raw material silicon, overseas trend, and development plan for polycrystalline silicon; (2) R and D plan for amorphous Si solar cell and its system, their optimum design, and their cost analysis and economic effect; (3) Technological investigation on cells and examination on array; (4) Basic design, peripheral equipment for system, and development schedule; (5) Report on the first actual state investigation concerning instrumentation of solar cells, i.e., on 'instrumentation and deviation in transformation efficiency', calibration system, problems of instrumentation of new device, problems of reliability test method, situation in various countries, and trend in atmospheric turbidimeter. (NEDO)

  18. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  19. Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

    International Nuclear Information System (INIS)

    Chao, D.S.; Liang, J.H.

    2013-01-01

    Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

  20. 3D silicon strip detectors

    International Nuclear Information System (INIS)

    Parzefall, Ulrich; Bates, Richard; Boscardin, Maurizio; Dalla Betta, Gian-Franco; Eckert, Simon; Eklund, Lars; Fleta, Celeste; Jakobs, Karl; Kuehn, Susanne; Lozano, Manuel; Pahn, Gregor; Parkes, Chris; Pellegrini, Giulio; Pennicard, David; Piemonte, Claudio; Ronchin, Sabina; Szumlak, Tomasz; Zoboli, Andrea; Zorzi, Nicola

    2009-01-01

    While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10 15 N eq /cm 2 , which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10 15 N eq /cm 2 . The tests were performed with three systems: a highly focused IR-laser with 5μm spot size to make position-resolved scans of the charge collection efficiency, an Sr 90 β-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the results obtained with 3D-STC-modules.

  1. 3D silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Bates, Richard [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Lozano, Manuel [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Pellegrini, Giulio [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Piemonte, Claudio; Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Szumlak, Tomasz [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

    2009-06-01

    While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10{sup 15}N{sub eq}/cm{sup 2}, which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency, an Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of

  2. Plasma processing of microcrystalline silicon films : filling in the gaps

    NARCIS (Netherlands)

    Bronneberg, A.C.

    2012-01-01

    Hydrogenated microcrystalline silicon (µc-Si:H) is a mixed-phase material consisting of crystalline silicon grains, hydrogenated amorphous silicon (a-Si:H) tissue, and voids. Microcrystalline silicon is extensively used as absorber layer in thin-film tandem solar cells, combining the advantages of a

  3. Study of effects of radiation on silicone prostheses

    International Nuclear Information System (INIS)

    Shedbalkar, A.R.; Devata, A.; Padanilam, T.

    1980-01-01

    Radiation effects on silicone gel and dose distribution of radiation through mammary prostheses were studied. Silicone gel behaves like tissue. Half value thickness for silicone gel and water are almost the same. Linear absorption coefficient for silicone gel and water are comparable

  4. High-efficient solar cells with porous silicon

    International Nuclear Information System (INIS)

    Migunova, A.A.

    2002-01-01

    It has been shown that the porous silicon is multifunctional high-efficient coating on silicon solar cells, modifies its surface and combines in it self antireflection and passivation properties., The different optoelectronic effects in solar cells with porous silicon were considered. The comparative parameters of uncovered photodetectors also solar cells with porous silicon and other coatings were resulted. (author)

  5. Formation of iron disilicide on amorphous silicon

    Science.gov (United States)

    Erlesand, U.; Östling, M.; Bodén, K.

    1991-11-01

    Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

  6. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  7. Porous silicon: Synthesis and optical properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Awad, F.

    2006-01-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  8. Porous silicon: Synthesis and optical properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Awad, F.

    2006-06-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  9. Porous silicon technology for integrated microsystems

    Science.gov (United States)

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  10. Lifetime of Nano-Structured Black Silicon for Photovoltaic Applications

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

    2016-01-01

    In this work, we present recent results of lifetime optimization for nano-structured black silicon and its photovoltaic applications. Black silicon nano-structures provide significant reduction of silicon surface reflection due to highly corrugated nanostructures with excellent light trapping pro......, respectively. This is promising for use of black silicon RIE nano-structuring in a solar cell process flow......In this work, we present recent results of lifetime optimization for nano-structured black silicon and its photovoltaic applications. Black silicon nano-structures provide significant reduction of silicon surface reflection due to highly corrugated nanostructures with excellent light trapping...

  11. Compressive creep of silicon nitride

    International Nuclear Information System (INIS)

    Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

    1990-01-01

    Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

  12. Germanium silicon physics and materials

    CERN Document Server

    Willardson, R K; Bean, John C; Hull, Robert

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  13. Visualizing a silicon quantum computer

    International Nuclear Information System (INIS)

    Sanders, Barry C; Hollenberg, Lloyd C L; Edmundson, Darran; Edmundson, Andrew

    2008-01-01

    Quantum computation is a fast-growing, multi-disciplinary research field. The purpose of a quantum computer is to execute quantum algorithms that efficiently solve computational problems intractable within the existing paradigm of 'classical' computing built on bits and Boolean gates. While collaboration between computer scientists, physicists, chemists, engineers, mathematicians and others is essential to the project's success, traditional disciplinary boundaries can hinder progress and make communicating the aims of quantum computing and future technologies difficult. We have developed a four minute animation as a tool for representing, understanding and communicating a silicon-based solid-state quantum computer to a variety of audiences, either as a stand-alone animation to be used by expert presenters or embedded into a longer movie as short animated sequences. The paper includes a generally applicable recipe for successful scientific animation production.

  14. Visualizing a silicon quantum computer

    Science.gov (United States)

    Sanders, Barry C.; Hollenberg, Lloyd C. L.; Edmundson, Darran; Edmundson, Andrew

    2008-12-01

    Quantum computation is a fast-growing, multi-disciplinary research field. The purpose of a quantum computer is to execute quantum algorithms that efficiently solve computational problems intractable within the existing paradigm of 'classical' computing built on bits and Boolean gates. While collaboration between computer scientists, physicists, chemists, engineers, mathematicians and others is essential to the project's success, traditional disciplinary boundaries can hinder progress and make communicating the aims of quantum computing and future technologies difficult. We have developed a four minute animation as a tool for representing, understanding and communicating a silicon-based solid-state quantum computer to a variety of audiences, either as a stand-alone animation to be used by expert presenters or embedded into a longer movie as short animated sequences. The paper includes a generally applicable recipe for successful scientific animation production.

  15. CMS Silicon Strip Tracker Performance

    CERN Document Server

    Agram, Jean-Laurent

    2012-01-01

    The CMS Silicon Strip Tracker (SST), consisting of 9.6 million readout channels from 15148 modules and covering an area of 198 square meters, needs to be precisely calibrated in order to correctly reconstruct the events recorded. Calibration constants are derived from different workflows, from promptly reconstructed events with particles as well as from commissioning events gathered just before the acquisition of physics runs. The performance of the SST has been carefully studied since the beginning of data taking: the noise of the detector, data integrity, signal-over-noise ratio, hit reconstruction efficiency and resolution have been all investigated with time and for different conditions. In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

  16. Silicon photomultipliers for scintillating trackers

    Energy Technology Data Exchange (ETDEWEB)

    Rabaioli, S., E-mail: simone.rabaioli@gmail.com [Universita degli Studi dell' Insubria, Via Valleggio, 11 - 22100 Como (Italy); Berra, A.; Bolognini, D. [Universita degli Studi dell' Insubria, Via Valleggio, 11 - 22100 Como (Italy); INFN sezione di Milano Bicocca (Italy); Bonvicini, V. [INFN sezione di Trieste (Italy); Bosisio, L. [Universita degli Studi di Trieste and INFN sezione di Trieste (Italy); Ciano, S.; Iugovaz, D. [INFN sezione di Trieste (Italy); Lietti, D. [Universita degli Studi dell' Insubria, Via Valleggio, 11 - 22100 Como (Italy); INFN sezione di Milano Bicocca (Italy); Penzo, A. [INFN sezione di Trieste (Italy); Prest, M. [Universita degli Studi dell' Insubria, Via Valleggio, 11 - 22100 Como (Italy); INFN sezione di Milano Bicocca (Italy); Rashevskaya, I.; Reia, S. [INFN sezione di Trieste (Italy); Stoppani, L. [Universita degli Studi dell' Insubria, Via Valleggio, 11 - 22100 Como (Italy); Vallazza, E. [INFN sezione di Trieste (Italy)

    2012-12-11

    In recent years, silicon photomultipliers (SiPMs) have been proposed as a new kind of readout device for scintillating detectors in many experiments. A SiPM consists of a matrix of parallel-connected pixels, which are independent photon counters working in Geiger mode with very high gain ({approx}10{sup 6}). This contribution presents the use of an array of eight SiPMs (manufactured by FBK-irst) for the readout of a scintillating bar tracker (a small size prototype of the Electron Muon Ranger detector for the MICE experiment). The performances of the SiPMs in terms of signal to noise ratio, efficiency and time resolution will be compared to the ones of a multi-anode photomultiplier tube (MAPMT) connected to the same bars. Both the SiPMs and the MAPMT are interfaced to a VME system through a 64 channel MAROC ASIC.

  17. Silicon photomultipliers for scintillating trackers

    Science.gov (United States)

    Rabaioli, S.; Berra, A.; Bolognini, D.; Bonvicini, V.; Bosisio, L.; Ciano, S.; Iugovaz, D.; Lietti, D.; Penzo, A.; Prest, M.; Rashevskaya, I.; Reia, S.; Stoppani, L.; Vallazza, E.

    2012-12-01

    In recent years, silicon photomultipliers (SiPMs) have been proposed as a new kind of readout device for scintillating detectors in many experiments. A SiPM consists of a matrix of parallel-connected pixels, which are independent photon counters working in Geiger mode with very high gain (∼106). This contribution presents the use of an array of eight SiPMs (manufactured by FBK-irst) for the readout of a scintillating bar tracker (a small size prototype of the Electron Muon Ranger detector for the MICE experiment). The performances of the SiPMs in terms of signal to noise ratio, efficiency and time resolution will be compared to the ones of a multi-anode photomultiplier tube (MAPMT) connected to the same bars. Both the SiPMs and the MAPMT are interfaced to a VME system through a 64 channel MAROC ASIC.

  18. Particle identification by silicon detectors

    International Nuclear Information System (INIS)

    Santos, Denison de Souza

    1997-01-01

    A method is developed for the evaluation of the energy loss, dE/dx, of a charged particle traversing a silicon strip detector. The method is applied to the DELPHI microvertex detector leading to diagrams of dE/dx versus momentum for different particles. The specific case of pions and protons is treated and the most probable value of dE/dx and the width of the dE/dx distribution for those particles in the momentum range of 0.2 GeV/c to 1.5 GeV/c, are obtained. The resolution found is 13.4 % for particles with momentum higher than 2 GeV/c and the separation power is 2.9 for 1.0 GeV/c pions and protons. (author)

  19. Visualizing a silicon quantum computer

    Energy Technology Data Exchange (ETDEWEB)

    Sanders, Barry C [Institute for Quantum Information Science, University of Calgary, Calgary, Alberta T2N 1N4 (Canada); Hollenberg, Lloyd C L [ARC Centre of Excellence for Quantum Computer Technology, School of Physics, University of Melbourne, Victoria 3010 (Australia); Edmundson, Darran; Edmundson, Andrew [EDM Studio Inc., Level 2, 850 16 Avenue SW, Calgary, Alberta T2R 0S9 (Canada)], E-mail: bsanders@qis.ucalgary.ca, E-mail: lloydch@unimelb.edu.au, E-mail: darran@edmstudio.com

    2008-12-15

    Quantum computation is a fast-growing, multi-disciplinary research field. The purpose of a quantum computer is to execute quantum algorithms that efficiently solve computational problems intractable within the existing paradigm of 'classical' computing built on bits and Boolean gates. While collaboration between computer scientists, physicists, chemists, engineers, mathematicians and others is essential to the project's success, traditional disciplinary boundaries can hinder progress and make communicating the aims of quantum computing and future technologies difficult. We have developed a four minute animation as a tool for representing, understanding and communicating a silicon-based solid-state quantum computer to a variety of audiences, either as a stand-alone animation to be used by expert presenters or embedded into a longer movie as short animated sequences. The paper includes a generally applicable recipe for successful scientific animation production.

  20. The BELLE silicon vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Alimonti, G.; Aihara, H.; Alexander, J.; Asano, Y.; Bakich, A.; Bozek, A.; Banas, E.; Browder, T.; Dragic, J.; Fukunaga, C.; Gordon, A.; Guler, H.; Everton, C.; Heenan, E.; Haba, J.; Hazumi, M.; Hastings, N.; Hara, T.; Hojo, T.; Higuchi, T.; Iwai, G.; Ishino, H.; Jalocha, P.; Korotuschenko, K.; Kaneko, J.; Kapusta, P.; Kawasaki, T.; Lange, J.S.; Li, Y.; Marlow, D.; Moloney, G.; Moffitt, L.; Mori, S.; Matsubara, T.; Nakadaira, T.; Nakamura, T.; Natkaniec, Z.; Okuno, S.; Olsen, S.; Ostrowicz, W.; Palka, H.; Peak, L.S.; Ryuko, J.; Rozanska, M.; Sevior, M.; Shimada, J.; Sumisawa, K.; Stock, R.; Stanic, S.; Swain, S.; Taylor, G.; Takasaki, F.; Tajima, H.; Trabelsi, K.; Tamura, N.; Tanaka, J.; Tanaka, M. E-mail: tanakam@post.kek.jp; Takahashi, S.; Tomura, T.; Tsuboyama, T.; Tsujita, Y.; Varner, G.; Varvell, K.E.; Watanabe, Y.; Yamamoto, H.; Yamada, Y.; Yokoyama, M.; Zhao, H.; Zontar, D

    2000-10-11

    A silicon vertex detector has been developed for the BELLE experiment at the KEK B-factory to be used to determine the relative displacements of B-meson decay vertices for CP violation measurements. The device has been successfully installed and operated with high-luminosity beam conditions. The average strip yield is larger than 96%, including the preamplifier electronics yield and the detector is currently working stably with a signal-to-noise ratio of 17-40. The measured impact parameter resolution agrees with expectations based on Monte Carlo simulations, and the measured D{sup 0} lifetime is in good agreement with the particle data group's average of other measurements. Several B{yields}J/{psi}K events produced at the {upsilon}(4S) resonance have been detected and separate decay vertices have been found.