WorldWideScience

Sample records for silicon rich nitrogen

  1. The role of nitrogen in the formation of oxygen-related thermal donors in silicon

    International Nuclear Information System (INIS)

    Griffin, J.A.; Hartung, J.; Weber, J.

    1989-01-01

    Nitrogen doped silicon is investigated by Photothermal Ionisation Spectroscopy (PTIS) and Infrared Absorption (IR). The Shallow Thermal Donors (STD) are observed in this nitrogen doped Cz-silicon as well as the deeper Thermal Donors (TD). The Thermal Donor Growth in nitrogen doped material is reduced in comparison to nominally undoped oxygen-rich silicon. The half-widths of the spectral lines arising from the STD-transitions are observed to be dependent on the nitrogen concentration. The results suggest only a catalytic role of N in the STD-growth. (author) 13 refs., 3 figs., 1 tab

  2. Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon

    Science.gov (United States)

    Adam, Lahir Shaik; Law, Mark E.; Szpala, Stanislaw; Simpson, P. J.; Lawther, Derek; Dokumaci, Omer; Hegde, Suri

    2001-07-01

    Nitrogen implantation is commonly used in multigate oxide thickness processing for mixed signal complementary metal-oxide-semiconductor and System on a Chip technologies. Current experiments and diffusion models indicate that upon annealing, implanted nitrogen diffuses towards the surface. The mechanism proposed for nitrogen diffusion is the formation of nitrogen-vacancy complexes in silicon, as indicated by ab initio studies by J. S. Nelson, P. A. Schultz, and A. F. Wright [Appl. Phys. Lett. 73, 247 (1998)]. However, to date, there does not exist any experimental evidence of nitrogen-vacancy formation in silicon. This letter provides experimental evidence through positron annihilation spectroscopy that nitrogen-vacancy complexes indeed form in nitrogen implanted silicon, and compares the experimental results to the ab initio studies, providing qualitative support for the same.

  3. Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

    International Nuclear Information System (INIS)

    Yu Zhenrui; Aceves, Mariano; Carrillo, Jesus; Lopez-Estopier, Rosa

    2006-01-01

    The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V T . When the applied voltage is smaller than V T , the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V T , the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained

  4. Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

    International Nuclear Information System (INIS)

    Choi, H.Y.; Wong, H.; Filip, V.; Sen, B.; Kok, C.W.; Chan, M.; Poon, M.C.

    2006-01-01

    It was recently found that the silicon oxynitride prepared by oxidation of silicon-rich silicon nitride (SRN) has several important features. The high nitrogen and extremely low hydrogen content of this material allows it to have a high dielectric constant and a low trap density. The present work investigates in further detail the electrical reliability of this kind of gate dielectric films by studying the charge trapping and interface state generation induced by constant current stressing. Capacitance-voltage (C-V) measurements indicate that for oxidation temperatures of 850 and 950 deg. C, the interface trap generation is minimal because of the high nitrogen content at the interface. At a higher oxidation temperature of 1050 deg. C, a large flatband shift is found for constant current stressing. This observation can be explained by the significant reduction of the nitrogen content and the phase separation effect at this temperature as found by X-ray photoelectron spectroscopy study. In addition to the high nitrogen content, the Si atoms at the interface exist in the form of random bonding to oxygen and nitrogen atoms for samples oxidized at 850 and 950 deg. C. This structure reduces the interface bonding constraint and results in the low interface trap density. For heavily oxidized samples the trace amount of interface nitrogen atoms exist in the form of a highly constraint SiN 4 phase and the interface oxynitride layer is a random mixture of SiO 4 and SiN 4 phases, which consequently reduces the reliability against high energy electron stressing

  5. Four-Wave Mixing in Silicon-Rich Nitride Waveguides

    DEFF Research Database (Denmark)

    Mitrovic, Miranda; Guan, Xiaowei; Ji, Hua

    2015-01-01

    We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss.......We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss....

  6. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  7. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  8. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

  9. Properties of non-stoichiometric nitrogen doped LPCVD silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mansour, F.; Mahamdi, R. [Departement d' Electronique, Universite Mentouri, Constantine (Algeria); Beghoul, M.R. [Departement d' Electronique, Universite de Jijel (Algeria); Temple-Boyer, P. [CNRS, LAAS, Toulouse (France); Universite de Toulouse, UPS, INSA, INP, ISAE, LAAS, Toulouse (France); Bouridah, H.

    2010-02-15

    The influence of nitrogen on the internal structure and so on the electrical properties of silicon thin films obtained by low-pressure chemical vapor deposition (LPCVD) was studied using several investigation methods. We found by using Raman spectroscopy and SEM observations that a strong relationship exists between the structural order of the silicon matrix and the nitrogen ratio in film before and after thermal treatment. As a result of the high disorder caused by nitrogen on silicon network during the deposit phase of films, the crystallization phenomena in term of nucleation and crystalline growth were found to depend upon the nitrogen content. Resistivity measurements results show that electrical properties of NIDOS films depend significantly on structural properties. It was appeared that for high nitrogen content, the films tend to acquire an insulator behavior. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Preparation and characterization of polymer-derived amorphous silicon carbide with silicon-rich stoichiometry

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Iwasaka, Akira [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Takagishi, Hideyuki [Faculty of Symbiotic System Science, Fukushima University, 1 Kanayagawa, Fukushima-shi, Fukushima 960-1296 (Japan); Shimoda, Tatsuya [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2016-08-01

    Polydihydrosilane with pendant hexyl groups was synthesized to obtain silicon-rich amorphous silicon carbide (a-SiC) films via the solution route. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage. Therefore, the polymer provides sufficient purity for the fabrication of semiconducting a-SiC. Here, we investigated the correlation of Si/C stoichiometry between the polymer and the resultant a-SiC film. The structural, optical, and electrical properties of the films with various carbon contents were also explored. Experimental results suggested that the excess carbon that did not participate in Si−C configurations was decomposed and was evaporated during polymer-to-SiC conversion. Consequently, the upper limit of the carbon in resultant a-SiC film was < 50 at.%; namely, the polymer provided silicon-rich a-SiC, whereas the conventionally used polycarbosilane inevitably provides carbon-rich one. These features of this unusual polymer open up a frontier of polymer-derived SiC and solution-processed SiC electronics. - Highlights: • Polymeric precursor solution for silicon carbide (SiC) is synthesized. • Semiconducting amorphous SiC is prepared via solution route. • The excess carbon is decomposed during cross-linking resulting in Si-rich SiC films. • The grown SiC films contain substantial amount of hydrogen atoms as SiH{sub n}/CH{sub n} entities. • Presence of CH{sub n} entities induces dangling bonds, causing poor electrical properties.

  11. Annealing and deposition effects of the chemical composition of silicon rich nitride

    DEFF Research Database (Denmark)

    Andersen, Karin Nordström; Svendsen, Winnie Edith; Stimpel-Lindner, T.

    2005-01-01

    Silicon-rich nitride, deposited by LPCVD, is a low stress amorphous material with a high refractive index. After deposition the silicon-rich nitride thin film is annealed at temperatures above 1100 oC to break N-H bonds, which have absorption peaks in the wavelength band important for optical...... in optical waveguides. This means that the annealing temperature must be high enough to break the N-H bonds, but no so high as to produce clusters. Therefore, the process window for an annealing step lies between 1100 and 1150 oC. The chemical composition of amorphous silicon-rich nitride has been...... investigated by Rutherford back scattering (RBS) and X-ray photoelectron spectroscopy (XPS). The influence of deposition parameters and annealing temperatures on the stoichiometry and the chemical bonds will be discussed. The origin of the clusters has been found to be silicon due to severe silicon out...

  12. Waveguiding properties of Er-implanted silicon-rich oxides

    International Nuclear Information System (INIS)

    Elliman, R.G.; Forcales, M.; Wilkinson, A.R.; Smith, N.J.

    2007-01-01

    The optical properties of erbium-doped silicon-rich silicon-oxide waveguides containing amorphous silicon nanoclusters and/or silicon nanocrystals are reported. Both amorphous nanoclusters and nanocrystals are shown to act as effective sensitizers for Er, with nanocrystals being more effective at low pump powers and nanoclusters being more effective at higher pump powers. All samples are shown to exhibit photo-induced absorption, as measured for a guided 1.5 μm probe beam while the waveguide was illuminated from above with a 477 nm pump beam. At a given pump power samples containing silicon nanocrystals exhibited greater attenuation than samples containing amorphous nanoclusters. The absorption is shown to be consistent with confined-carrier absorption due to photoexcited carriers in the nanocrystals and/or nanoclusters

  13. Mechanisms and characteristics of silicon combustion in nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Mukasian, A.S.; Martynenko, V.M.; Merzhanov, A.G.; Borovinskaia, I.P.; Blinov, M.IU.

    1986-10-01

    An experimental study is made of the principal characteristics of combustion in the system silicon-nitrogen associated with phase transitions of the first kind (silicon melting and silicon nitride dissociation). Concepts of the combustion mechanism are developed on the basis of elementary models of combustion of the second kind and filtering combustion theory. In particular, it is shown that, in the pressure range studied (10-20 MPa), filtering does not limit the combustion process. Details of the experimental procedure and results are presented. 22 references.

  14. Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by TVA method

    Science.gov (United States)

    Ciupina, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Lungu, Cristian P.; Vladoiu, Rodica; Jepu, Ionut; Mandes, Aurelia; Dinca, Virginia; Caraiane, Aureliana; Nicolescu, Virginia; Cupsa, Ovidiu; Dinca, Paul; Zaharia, Agripina

    2017-08-01

    Protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, were obtained by Thermionic Vacuum Arc (TVA) method. The initial carbon layer having a thickness of 100nm has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions, each having a thickness of 40nm. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV . The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. Oxidation protection of carbon is based on the reaction between oxygen and silicon carbide, resulting in SiO2, SiO and CO2, and also by reaction involving N, O and Si, resulting in silicon oxynitride (SiNxOy) with a continuously variable composition, and on the other hand, since nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, 80% silver filled two-component epoxy-based glue ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. The experimental data show the increase of conductivity with the increase of the nitrogen content. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

  15. Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

    International Nuclear Information System (INIS)

    Hezel, R.; Streb, W.

    1985-01-01

    Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

  16. Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

    International Nuclear Information System (INIS)

    Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

    2006-01-01

    Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

  17. Large magnetoresistance effect in nitrogen-doped silicon

    Directory of Open Access Journals (Sweden)

    Tao Wang

    2017-05-01

    Full Text Available In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications.

  18. Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by thermionic vacuum arc (TVA) method

    Science.gov (United States)

    Ciupinǎ, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Vladoiu, Rodica; Mandes, Aurelia; Dinca, Virginia; Nicolescu, Virginia; Manu, Radu; Dinca, Paul; Zaharia, Agripina

    2018-02-01

    To obtain protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, was used TVA method. The initial carbon layer has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV. The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. The retention of oxygen in the protective layer of N-Si-C is due to the following phenomena: (a) The reaction between oxygen and silicon carbide resulting in silicon oxide and carbon dioxide; (b) The reaction involving oxygen, nitrogen and silicon resulting silicon oxinitride with a variable composition; (c) Nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

  19. Deposition of silicon films in presence of nitrogen plasma— A ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. A design, development and validation work of plasma based 'activated reactive evaporation (ARE) system' is implemented for the deposition of the silicon films in presence of nitrogen plasma on substrate maintained at room temperature. This plasma based deposition system involves evaporation of pure silicon by.

  20. Delayed addition of nitrogen-rich substrates during composting of municipal waste

    DEFF Research Database (Denmark)

    Nigatu, Abebe Nigussie; Bruun, Sander; Kuyper, Thomas W.

    2017-01-01

    -rich substrate (poultry manure) on nitrogen losses and greenhouse gas emissions during composting and to link this effect to different bulking agents (coffee husks and sawdust), and (ii) to assess the effect of split addition of a nitrogen-rich substrate on compost stability and sanitisation. The results showed...

  1. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  2. Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

    Institute of Scientific and Technical Information of China (English)

    Dai Xian-Qi; Tang Ya-Nan; Dai Ya-Wei; Li Yan-Hui; Zhao Jian-Hua; Zhao Bao; Yang Zong-Xian

    2011-01-01

    The structures of Pt clusters on nitrogen-, boron-, silicon- doped graphenes are theoretically studied using densityfunctional theory. These dopants (nitrogen, boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form. The formation energy of the silicon-graphene system is lower than those of the nitrogen-, boron-doped graphenes, indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene. The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen- and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size. The stable structures of Pt clusters on the doped-graphenes are dimeric, triangle and tetrahedron with the increase of the Pt coverage. Of all the studied structures, the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.

  3. Nitrogen implantation into silicon at 700-1100 deg C

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Tyschenko, I.E.; Popov, V.P.; Tijs, S.A.; Plotnikov, A.E.

    1989-01-01

    Nitrogen ions 130-140 kW potential accelerated were implanted in silicon heated up to Ti=700-1100 deg C. Densities of ion current were 1-5 mcA/cm 2 , doses did not exceed 5x10 17 cm -2 . Initial stages of nitride formation in buried layers are investigated by means of Rutherford backscattering, layer-by-layer Augerspctroscopy and electron microscopy. It is determind, that Ti growth from 700 up to 900 deg C is accompanied by essential reduction of defectiveness of silicon near-the-surface layer at nitrogen retention within the limits of the calculation profile of ion ranges. At Ti=900 deg C nitrogen is rather mobile and at ∼5x10 16 cm -2 dose it is drown to α-Si 3 N 4 crystalling extraction in R p range. Beginning from Ti ≅1000 deg C nitrogen is not retained in the furied layer and diffuses to the surface. No essenstial losses of nitrogen due to evaporation or inside diffusion are observed. It is noted, that critical Ti, when nitrogen is accumulated in the buried layer, correspond to critical temperatures, when light ions introduce essential structure distortions. Conclusion is made, that irradition-introduced distortions of structure represent centres of initiation and growth of nitride phase. At 1150 deg C additional annaling during 3 hs nitrogen, occurring outside the stable extraction, is redistributed between th surface and furied layers, sintering in narrow concentration peaks

  4. Effect of carbon and silicon on nitrogen solubility in liquid chromium and iron-chromium alloys

    International Nuclear Information System (INIS)

    Khyakkinen, V.I.; Bezobrazov, S.V.

    1986-01-01

    The study is aimed at specifying the role of carbon and silicon in high-chromium melts nitridation processes. It is shown that in high-chromium melts of the Cr-Fe-C system the nitrogen solubility is reduced with the growth of carbon content and in the chromium concentration range of 70-100% at 1873 K and P N 2 =0.1 MPa it is described by the lg[%N] Cr-Fe-C =lg[%N] cr-fe -0.098[%C] equation. While decreasing the temperature the nitrogen solubility in alloys is increased. Silicon essentially decreases the nitrogen solubility in liquid chromium. For the 0-10% silicon concentration range the relation between the equilibrium content of nitrogen and silicon at 1873 K and P N 2 =0.1 MPa is described by the straight line equation [%N] Cr-Si =6.1-0.338 [%Si

  5. A study of luminescence from silicon-rich silica fabricated by plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Trwoga, P.F.

    1998-01-01

    Silicon is the most studied electronic material known to man and dominates the electronics industry in its use as a semiconductors for nearly all integrated electronics. However, optoelectronics is almost entirely based on III-V materials. This technology is used because silicon is a very inefficient light source, whereas the III-V band structure can lend itself to efficient light emission by electron injection. However, due to the overwhelming dominance of silicon based electronics it is still a highly desirable goal to generate light efficiently from silicon based materials. Recently, studies have demonstrated that efficient visible luminescence can be obtained from certain novel forms of silicon. These materials include porous silicon, hydrogenated amorphous silicon, and silicon-rich silica (SiO x x x is studied in detail; in addition, electroluminescence and rare-earth doping of silicon-rich silica is also addressed. (author)

  6. Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Kirill O. Bugaev

    2012-01-01

    Full Text Available Vibrational properties of hydrogenated silicon-rich nitride (SiN:H of various stoichiometry (0.6≤≤1.3 and hydrogenated amorphous silicon (a-Si:H films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130∘C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

  7. Thermal Stability of Hi-Nicalon SiC Fiber in Nitrogen and Silicon Environments

    Science.gov (United States)

    Bhatt, R. T.; Garg, A.

    1995-01-01

    The room temperature tensile strength of uncoated and two types of pyrolytic boron nitride coated (PBN and Si-rich PBN) Hi-Nicalon SiC fibers was determined after 1 to 400 hr heat treatments to 1800 C under N2 pressures of 0.1, 2, and 4 MPa, and under 0.1 Mpa argon and vacuum environments. In addition, strength stability of both uncoated and coated fibers embedded in silicon powder and exposed to 0.1 MPa N2 for 24 hrs at temperatures to 1400 C was investigated. The uncoated and both types of BN coated fibers exposed to N2 for 1 hr showed noticeable strength degradation above 1400 C and 1600 C, respectively. The strength degradation appeared independent of nitrogen pressure, time of heat treatment, and surface coatings. TEM microstructural analysis suggests that flaws created due to SiC grain growth are responsible for the strength degradation. In contact with silicon powder, the uncoated and both types of PBN coated fibers degrade rapidly above 1350 C.

  8. Delayed addition of nitrogen-rich substrates during composting of municipal waste: Effects on nitrogen loss, greenhouse gas emissions and compost stability.

    Science.gov (United States)

    Nigussie, Abebe; Bruun, Sander; Kuyper, Thomas W; de Neergaard, Andreas

    2017-01-01

    Municipal waste is usually composted with an N-rich substrate, such as manure, to increase the N content of the product. This means that a significant amount of nitrogen can be lost during composting. The objectives of this study were (i) to investigate the effect of split addition of a nitrogen-rich substrate (poultry manure) on nitrogen losses and greenhouse gas emissions during composting and to link this effect to different bulking agents (coffee husks and sawdust), and (ii) to assess the effect of split addition of a nitrogen-rich substrate on compost stability and sanitisation. The results showed that split addition of the nitrogen-rich substrate reduced nitrogen losses by 9% when sawdust was used and 20% when coffee husks were used as the bulking agent. Depending on the bulking agent used, split addition increased cumulative N 2 O emissions by 400-600% compared to single addition. In contrast, single addition increased methane emissions by up to 50% compared to split addition of the substrate. Hence, the timing of the addition of the N-rich substrate had only a marginal effect on total non-CO 2 greenhouse gas emissions. Split addition of the N-rich substrate resulted in compost that was just as stable and effective at completely eradicating weed seeds as single addition. These findings therefore show that split addition of a nitrogen-rich substrate could be an option for increasing the fertilising value of municipal waste compost without having a significant effect on total greenhouse gas emissions or compost stability. Copyright © 2016 Elsevier Ltd. All rights reserved.

  9. Elastic properties of sub-stoichiometric nitrogen ion implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sarmanova, M.F., E-mail: marina.sarmanova@iom-leipzig.de [Leibniz Institute of Surface Modification, D-04318 Leipzig (Germany); Karl, H. [University Augsburg, Institute of Physics, D-86135 Augsburg (Germany); Mändl, S.; Hirsch, D. [Leibniz Institute of Surface Modification, D-04318 Leipzig (Germany); Mayr, S.G.; Rauschenbach, B. [Leibniz Institute of Surface Modification, D-04318 Leipzig (Germany); University Leipzig, Institute for Experimental Physics II, D-04103 Leipzig (Germany)

    2015-04-15

    Elastic properties of sub-stoichiometric nitrogen implanted silicon were measured with nanometer-resolution using contact resonance atomic force microscopy (CR-AFM) as function of ion fluence and post-annealing conditions. The determined range of indentation moduli was between 100 and 180 GPa depending on the annealing duration and nitrogen content. The high indentation moduli can be explained by formation of Si–N bonds, as verified by X-ray photoelectron spectroscopy.

  10. The fabrication of nitrogen detector porous silicon nanostructures

    Science.gov (United States)

    Husairi, F. S.; Othman, N.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

    2018-05-01

    In this study the porous silicon nanostructure used as a the nitrogen detector was fabricated by using anodization method because of simple and easy to handle. This method using 20 mA/ cm2 of current density and the etching time is from 10 - 40 minutes. The properties of the porous silicon nanostructure analyzed using I-V testing (electrical properties) and photoluminescence spectroscopy. From the I-V testing, sample PsiE40 where the sensitivity is 25.4% is a sensitivity of PSiE40 at 10 seconds exposure time.

  11. Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

    Energy Technology Data Exchange (ETDEWEB)

    Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Casas Espinola, J.L. [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Vergara Hernandez, E. [UPIITA—Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Khomenkova, L., E-mail: khomen@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, 03028 Kyiv (Ukraine); Delachat, F.; Slaoui, A. [ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2 (France)

    2015-04-30

    Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the variation of NH{sub 3}/SiH{sub 4} ratio from 0.45 up to 1.0. Thermal annealing at 1100 °C for 30 min in the nitrogen flow was applied to form the Si nanocrystals in the films that have been investigated by means of photoluminescence and Raman scattering methods, as well as transmission electron microscopy. Several emission bands have been detected with the peak positions at: 2.8–3.0 eV, 2.5–2.7 eV, 2.10–2.25 eV, and 1.75–1.98 eV. The temperature dependences of photoluminescence spectra were studied with the aim to confirm the types of optical transitions and the nature of light emitting defects in silicon nitride. The former three bands were assigned to the defects in silicon nitride, whereas the last one (1.75–1.98 eV) was attributed to the exciton recombination inside of Si nanocrystals. The photoluminescence mechanism is discussed. - Highlights: • Substoichiometric silicon nitride films were grown by PECVD technique. • The variation of the NH{sub 3}/SiH{sub 4} ratio controls excess Si content in the films. • Both Si nanocrystals and amorphous Si phase were observed in annealed films. • Temperature evolution of carrier recombination via Si nanocrystals and host defects.

  12. Photoconduction in silicon rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  13. Computational studies on energetic properties of nitrogen-rich ...

    Indian Academy of Sciences (India)

    Computational studies on energetic properties of nitrogen-rich energetic materials with ditetrazoles. LI XIAO-HONGa,b,∗ and ZHANG RUI-ZHOUa. aCollege of Physics and Engineering, Henan University of Science and Technology, Luoyang 471 003, China. bLuoyang Key Laboratory of Photoelectric Functional Materials, ...

  14. Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

    International Nuclear Information System (INIS)

    Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

    2011-01-01

    We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

  15. Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

    International Nuclear Information System (INIS)

    Chao, D.S.; Liang, J.H.

    2013-01-01

    Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

  16. Plant species richness enhances nitrogen retention in green roof plots.

    Science.gov (United States)

    Johnson, Catherine; Schweinhart, Shelbye; Buffam, Ishi

    2016-10-01

    Vegetated (green) roofs have become common in many cities and are projected to continue to increase in coverage, but little is known about the ecological properties of these engineered ecosystems. In this study, we tested the biodiversity-ecosystem function hypothesis using commercially available green roof trays as replicated plots with varying levels of plant species richness (0, 1, 3, or 6 common green roof species per plot, using plants with different functional characteristics). We estimated accumulated plant biomass near the peak of the first full growing season (July 2013) and measured runoff volume after nearly every rain event from September 2012 to September 2013 (33 events) and runoff fluxes of inorganic nutrients ammonium, nitrate, and phosphate from a subset of 10 events. We found that (1) total plant biomass increased with increasing species richness, (2) green roof plots were effective at reducing storm runoff, with vegetation increasing water retention more than soil-like substrate alone, but there was no significant effect of plant species identity or richness on runoff volume, (3) green roof substrate was a significant source of phosphate, regardless of presence/absence of plants, and (4) dissolved inorganic nitrogen (DIN = nitrate + ammonium) runoff fluxes were different among plant species and decreased significantly with increasing plant species richness. The variation in N retention was positively related to variation in plant biomass. Notably, the increased biomass and N retention with species richness in this engineered ecosystem are similar to patterns observed in published studies from grasslands and other well-studied ecosystems. We suggest that more diverse plantings on vegetated roofs may enhance the retention capacity for reactive nitrogen. This is of importance for the sustained health of vegetated roof ecosystems, which over time often experience nitrogen limitation, and is also relevant for water quality in receiving waters

  17. Electrochemical study of lithium insertion into carbon-rich polymer-derived silicon carbonitride ceramics

    International Nuclear Information System (INIS)

    Kaspar, Jan; Mera, Gabriela; Nowak, Andrzej P.; Graczyk-Zajac, Magdalena; Riedel, Ralf

    2010-01-01

    This paper presents the lithium insertion into carbon-rich polymer-derived silicon carbonitride (SiCN) ceramic synthesized by the thermal treatment of poly(diphenylsilylcarbodiimide) at three temperatures, namely 1100, 1300, and 1700 o C under 0.1 MPa Ar atmosphere. At lower synthesis temperatures, the material is X-ray amorphous, while at 1700 o C, the SiCN ceramic partially crystallizes. Anode materials prepared from these carbon-rich SiCN ceramics without any fillers and conducting additives were characterized using cyclic voltammetry and chronopotentiometric charging/discharging. We found that the studied silicon carbonitride ceramics demonstrate a promising electrochemical behavior during lithium insertion/extraction in terms of capacity and cycling stability. The sample synthesized at 1300 o C exhibits a reversible capacity of 392 mAh g -1 . Our study confirms that carbon-rich SiCN phases are electrochemically active materials in terms of Li inter- and deintercalation.

  18. Synergistic effect and mechanism of platinum catalyst and nitrogen-containing silane on the thermal stability of silicone rubber

    International Nuclear Information System (INIS)

    Chen, Wanjuan; Zeng, Xingrong; Lai, Xuejun; Li, Hongqiang; Fang, Weizhen; Liu, Tian

    2016-01-01

    Highlights: • Platinum (Pt) and nitrogen-containing silane (NS) were introduced into silicone rubber. • The thermal stability was improved by Pt/NS both under nitrogen and air atmosphere. • The TG-FTIR of evolved gases during degradation was performed. • The synergistic effect and mechanism of Pt and NS were proposed. - Abstract: Platinum (Pt) catalyst and nitrogen-containing silane (NS) were introduced to improve the thermal stability of silicone rubber. The effects of Pt and NS on thermal stability and degradation mechanism of silicone rubber were investigated by thermogravimetry (TG), thermogravimetry-Fourier transform infrared spectrometry (TG-FTIR), scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDXS) and Fourier transform infrared spectrometry (FTIR). A significant synergism was found between Pt and NS for improving the thermal stability of silicone rubber. When 6.67 ppm of Pt and 1.4 phr of NS were introduced, the temperature of 10% and 20% weight loss under nitrogen atmosphere were respectively increased by 36 °C and 119 °C. Meanwhile, the residue weight at 900 °C was doubled to 68% in the presence of Pt/NS. The synergistic mechanism might be that the nitrogen atom coordinated with Pt and improved the catalytic efficiency of Pt. Additionally, NS preserved the catalytic activity of Pt under air atmosphere. Hence, Pt/NS efficiently catalyzed thermal crosslinking and suppressed degradation of silicone chains. Moreover, it revealed that the presence of Pt/NS protected silicone chains from oxidation. Thus, the unzipping depolymerization by silanol groups was reduced significantly.

  19. Synergistic effect and mechanism of platinum catalyst and nitrogen-containing silane on the thermal stability of silicone rubber

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Wanjuan; Zeng, Xingrong, E-mail: psxrzeng@gmail.com; Lai, Xuejun; Li, Hongqiang; Fang, Weizhen; Liu, Tian

    2016-05-20

    Highlights: • Platinum (Pt) and nitrogen-containing silane (NS) were introduced into silicone rubber. • The thermal stability was improved by Pt/NS both under nitrogen and air atmosphere. • The TG-FTIR of evolved gases during degradation was performed. • The synergistic effect and mechanism of Pt and NS were proposed. - Abstract: Platinum (Pt) catalyst and nitrogen-containing silane (NS) were introduced to improve the thermal stability of silicone rubber. The effects of Pt and NS on thermal stability and degradation mechanism of silicone rubber were investigated by thermogravimetry (TG), thermogravimetry-Fourier transform infrared spectrometry (TG-FTIR), scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDXS) and Fourier transform infrared spectrometry (FTIR). A significant synergism was found between Pt and NS for improving the thermal stability of silicone rubber. When 6.67 ppm of Pt and 1.4 phr of NS were introduced, the temperature of 10% and 20% weight loss under nitrogen atmosphere were respectively increased by 36 °C and 119 °C. Meanwhile, the residue weight at 900 °C was doubled to 68% in the presence of Pt/NS. The synergistic mechanism might be that the nitrogen atom coordinated with Pt and improved the catalytic efficiency of Pt. Additionally, NS preserved the catalytic activity of Pt under air atmosphere. Hence, Pt/NS efficiently catalyzed thermal crosslinking and suppressed degradation of silicone chains. Moreover, it revealed that the presence of Pt/NS protected silicone chains from oxidation. Thus, the unzipping depolymerization by silanol groups was reduced significantly.

  20. Distribution of species and Ga–N bonds in silicon co-implanted with gallium and nitrogen ions

    International Nuclear Information System (INIS)

    Surodin, S. I.; Nikolitchev, D. E.; Kryukov, R. N.; Belov, A. I.; Korolev, D. S.; Mikhaylov, A. N.; Tetelbaum, D. I.

    2016-01-01

    The concentration profiles of species in silicon subjected to gallium and nitrogen co-implantation and subsequent annealing have been investigated by the method of X-ray photoelectron spectroscopy combined with the layer-by-layer ion etching of the implanted layer. It is shown that practically entire implanted gallium undergoes out-diffusion, but the preliminary implantation of nitrogen for the synthesis of a barrier SiN_x layer makes it possible to avoid the essential loss of gallium. In this case, about 14 % of implanted gallium bond to nitrogen. The obtained data are discussed from the viewpoint of the possibility of ion synthesis of GaN inclusions in silicon matrix.

  1. Distribution of species and Ga–N bonds in silicon co-implanted with gallium and nitrogen ions

    Energy Technology Data Exchange (ETDEWEB)

    Surodin, S. I., E-mail: surodin.bsn@mail.ru; Nikolitchev, D. E.; Kryukov, R. N.; Belov, A. I.; Korolev, D. S.; Mikhaylov, A. N.; Tetelbaum, D. I., E-mail: tetelbaum@phys.unn.ru [Lobachevsky University, 23 Prospekt Gagarina, Nizhny Novgorod, 603950 (Russian Federation)

    2016-06-17

    The concentration profiles of species in silicon subjected to gallium and nitrogen co-implantation and subsequent annealing have been investigated by the method of X-ray photoelectron spectroscopy combined with the layer-by-layer ion etching of the implanted layer. It is shown that practically entire implanted gallium undergoes out-diffusion, but the preliminary implantation of nitrogen for the synthesis of a barrier SiN{sub x} layer makes it possible to avoid the essential loss of gallium. In this case, about 14 % of implanted gallium bond to nitrogen. The obtained data are discussed from the viewpoint of the possibility of ion synthesis of GaN inclusions in silicon matrix.

  2. Learning nitrogen-vacancy electron spin dynamics on a silicon quantum photonic simulator

    NARCIS (Netherlands)

    Wang, J.; Paesani, S.; Santagati, R.; Knauer, S.; Gentile, A. A.; Wiebe, N.; Petruzzella, M.; Laing, A.; Rarity, J. G.; O'Brien, J. L.; Thompson, M. G.

    2017-01-01

    We present the experimental demonstration of quantum Hamiltonian learning. Using an integrated silicon-photonics quantum simulator with the classical machine learning technique, we successfully learn the Hamiltonian dynamics of a diamond nitrogen-vacancy center's electron ground-state spin.

  3. Determination of carbon and nitrogen in silicon and germanium

    International Nuclear Information System (INIS)

    Gebauhr, W.; Martin, J.

    1975-01-01

    The essential aim of this study is to examine the various technical and economic problems encountered in the determination of carbon and nitrogen in silicon and germanium, for this is in a way an extension of the discussion concerning the presence of oxygen in these two elements. The greater part of the study is aimed at drawing up a catalogue of the methods of analysis used and of the results obtained so far

  4. Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

    Science.gov (United States)

    Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

    2011-05-01

    The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

  5. Etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon

    International Nuclear Information System (INIS)

    Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R.; Acero, M.C. Esteve, J.; Montserrat, J.; El-Hassani, A.

    1996-01-01

    In this work the etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon is studied as a function of the processing parameters, the implantation dose and temperature, and the presence of capping layers during implantation. Etching characteristics have been probed using tetramethylammonium hydroxide or KOH solutions for different times up to 6 h. Results show that, after annealing, the minimum dose required for the formation of an efficient etch-stop layer is about 4 x 10 17 cm -2 , for an implantation energy of 75 keV. This is defined as a layer with an efficient etch selectivity in relation to Si of s ≥ 100. For larger implantation doses efficient etch selectivities larger than 100 are obtained. However, for these doses a considerable density of pits is observed in the etch-stop layer. These are related to the presence of nitrogen poor Si regions in the buried layer after annealing, due to a partial separation of silicon and silicon nitride phases during the annealing process. The influence of this separation of phases as well as nitrogen gettering in the buried layer on the etch-stop behavior is discussed as a function of the processing parameters

  6. Fluorescence and thermoluminescence in silicon oxide films rich in silicon; Fluorescencia y termoluminiscencia en peliculas de oxido de silicio rico en silicio

    Energy Technology Data Exchange (ETDEWEB)

    Berman M, D.; Piters, T. M. [Centro de Investigacion en Fisica, Universidad de Sonora, Apdo. Postal 5-088, Hermosillo 83190, Sonora (Mexico); Aceves M, M.; Berriel V, L. R. [Instituto Nacional de Astrofisica, Optica y Electronica, Apdo. Postal 51, Puebla 72000, Puebla (Mexico); Luna L, J. A. [CIDS, Benemerita Universidad Autonoma de Puebla, Apdo. Postal 1651, Puebla 72000, Puebla (Mexico)

    2009-10-15

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 {omega}-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N{sub 2} at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  7. Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

    Energy Technology Data Exchange (ETDEWEB)

    Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

    2012-10-15

    We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Nitrogen fertilization affects silicon concentration, cell wall composition and biofuel potential of wheat straw

    DEFF Research Database (Denmark)

    Murozuka, Emiko; Laursen, Kristian Holst; Lindedam, Jane

    2014-01-01

    Nitrogen is an essential input factor required for plant growth and biomass production. However, very limited information is available on how nitrogen fertilization affects the quality of crop residues to be used as lignocellulosic feedstock. In the present study, straw of winter wheat plants grown...... linearly from 0.32% to 0.71% over the range of nitrogen treatments. Cellulose and hemicellulose were not affected by the nitrogen supply while lignin peaked at medium rates of nitrogen application. The nitrogen treatments had a distinct influence on the silicon concentration, which decreased from 2.5% to 1.......5% of the straw dry matter when the nitrogen supply increased from 48 to 192kgha-1. No further decline in Si occurred at higher rates of nitrogen application. The most abundant metals in the straw were potassium and calcium and their concentrations almost doubled over the range of nitrogen supplies. The enzymatic...

  9. Rate equation modelling of erbium luminescence dynamics in erbium-doped silicon-rich-silicon-oxide

    Energy Technology Data Exchange (ETDEWEB)

    Shah, Miraj, E-mail: m.shah@ee.ucl.ac.uk [Department of Electronic and Electrical Engineering, UCL, Torrington Place, London WC1E 7JE (United Kingdom); Wojdak, Maciej; Kenyon, Anthony J. [Department of Electronic and Electrical Engineering, UCL, Torrington Place, London WC1E 7JE (United Kingdom); Halsall, Matthew P.; Li, Hang; Crowe, Iain F. [Photon Science Institute and School of Electrical and Electronic Engineering, University of Manchester, Sackville St Building, Manchester M13 9PL (United Kingdom)

    2012-12-15

    Erbium doped silicon-rich silica offers broad band and very efficient excitation of erbium photoluminescence (PL) due to a sensitization effect attributed to silicon nanocrystals (Si-nc), which grow during thermal treatment. PL decay lifetime measurements of sensitised Er{sup 3+} ions are usually reported to be stretched or multi exponential, very different to those that are directly excited, which usually show a single exponential decay component. In this paper, we report on SiO{sub 2} thin films doped with Si-nc's and erbium. Time resolved PL measurements reveal two distinct 1.54 {mu}m Er decay components; a fast microsecond component, and a relatively long lifetime component (10 ms). We also study the structural properties of these samples through TEM measurements, and reveal the formation of Er clusters. We propose that these Er clusters are responsible for the fast {mu}s decay component, and we develop rate equation models that reproduce the experimental transient observations, and can explain some of the reported transient behaviour in previously published literature.

  10. Increased forest ecosystem carbon and nitrogen storage from nitrogen rich bedrock.

    Science.gov (United States)

    Morford, Scott L; Houlton, Benjamin Z; Dahlgren, Randy A

    2011-08-31

    Nitrogen (N) limits the productivity of many ecosystems worldwide, thereby restricting the ability of terrestrial ecosystems to offset the effects of rising atmospheric CO(2) emissions naturally. Understanding input pathways of bioavailable N is therefore paramount for predicting carbon (C) storage on land, particularly in temperate and boreal forests. Paradigms of nutrient cycling and limitation posit that new N enters terrestrial ecosystems solely from the atmosphere. Here we show that bedrock comprises a hitherto overlooked source of ecologically available N to forests. We report that the N content of soils and forest foliage on N-rich metasedimentary rocks (350-950 mg N kg(-1)) is elevated by more than 50% compared with similar temperate forest sites underlain by N-poor igneous parent material (30-70 mg N kg(-1)). Natural abundance N isotopes attribute this difference to rock-derived N: (15)N/(14)N values for rock, soils and plants are indistinguishable in sites underlain by N-rich lithology, in marked contrast to sites on N-poor substrates. Furthermore, forests associated with N-rich parent material contain on average 42% more carbon in above-ground tree biomass and 60% more carbon in the upper 30 cm of the soil than similar sites underlain by N-poor rocks. Our results raise the possibility that bedrock N input may represent an important and overlooked component of ecosystem N and C cycling elsewhere.

  11. Analysis of buried etch-stop layers in silicon by nitrogen-ion implantation

    International Nuclear Information System (INIS)

    Acero, M.C.; Esteve, J.; Montserrat, J.; Perez-Rodriguez, A.; Garrido, B.; Romano-Rodriguez, A.; Morante, J.R.

    1993-01-01

    The analysis of the etch-stop properties of layers obtained by substoichiometric nitrogen-ion implantation and annealing in silicon has been performed as a function of the implantation conditions. The analysis of the etching efficiency has been tested in TMAH-IPA systems. The results obtained show the need to implant at doses higher than 2 x 10 17 cm -2 to obtain etch-stop layers stable under high-temperature annealing. So, for implantation doses of 5 x 10 17 cm -2 , layers stand unetched for times longer than 2 h. The preliminary structural analysis of the samples suggests the presence of an amorphous silicon nitride layer for higher implantation doses. (author)

  12. Boron diffusion into nitrogen doped silicon films for P{sup +} polysilicon gate structures

    Energy Technology Data Exchange (ETDEWEB)

    Mansour, Farida; Mahamdi, Ramdane; Jalabert, Laurent; Temple-Boyer, Pierre

    2003-06-23

    This paper deals with the study of the boron diffusion in nitrogen doped silicon (NIDOS) deposited from disilane Si{sub 2}H{sub 6} and ammonia NH{sub 3} for the development of P{sup +} polysilicon gate metal oxide semiconductor (MOS) devices. NIDOS films with varied nitrogen content have been boron implanted, then annealed and finally analysed by secondary ion mass spectroscopy (SIMS). In order to simulate the experimental SIMS of boron concentration profiles in the NIDOS films, a model adapted to the particular conditions of the samples elaboration, i.e. the very high boron concentration and the nitrogen content, has been established. The boron diffusion reduction in NIDOS films with increasing nitrogen rates has been evidenced by the profiles as well as by the obtained diffusion coefficients, which shows that the nitrogen incorporation reduces the boron diffusion. This has been confirmed by capacitance-voltage (C-V) measurements performed on MOS capacitors: the higher the nitrogen content, the lower the flat-band voltage. Finally, these results demonstrate that the improvement of the gate oxide quality occurs with the suppression of the boron penetration.

  13. Creation of high density ensembles of nitrogen-vacancy centers in nitrogen-rich type Ib nanodiamonds

    International Nuclear Information System (INIS)

    Su, Long-Jyun; Fang, Chia-Yi; Chang, Yu-Tang; Chang, Huan-Cheng; Chen, Kuan-Ming; Yu, Yueh-Chung; Hsu, Jui-Hung

    2013-01-01

    This work explores the possibility of increasing the density of negatively charged nitrogen-vacancy centers ([NV − ]) in nanodiamonds using nitrogen-rich type Ib diamond powders as the starting material. The nanodiamonds (10–100 nm in diameter) were prepared by ball milling of microdiamonds, in which the density of neutral and atomically dispersed nitrogen atoms ([N 0 ]) was measured by diffuse reflectance infrared Fourier transform spectroscopy. A systematic measurement of the fluorescence intensities and lifetimes of the crushed monocrystalline diamonds as a function of [N 0 ] indicated that [NV − ] increases nearly linearly with [N 0 ] at 100–200 ppm. The trend, however, failed to continue for nanodiamonds with higher [N 0 ] (up to 390 ppm) but poorer crystallinity. We attribute the result to a combined effect of fluorescence quenching as well as the lower conversion efficiency of vacancies to NV − due to the presence of more impurities and defects in these as-grown diamond crystallites. The principles and practice of fabricating brighter and smaller fluorescent nanodiamonds are discussed. (paper)

  14. Creation of high density ensembles of nitrogen-vacancy centers in nitrogen-rich type Ib nanodiamonds.

    Science.gov (United States)

    Su, Long-Jyun; Fang, Chia-Yi; Chang, Yu-Tang; Chen, Kuan-Ming; Yu, Yueh-Chung; Hsu, Jui-Hung; Chang, Huan-Cheng

    2013-08-09

    This work explores the possibility of increasing the density of negatively charged nitrogen-vacancy centers ([NV(-)]) in nanodiamonds using nitrogen-rich type Ib diamond powders as the starting material. The nanodiamonds (10-100 nm in diameter) were prepared by ball milling of microdiamonds, in which the density of neutral and atomically dispersed nitrogen atoms ([N(0)]) was measured by diffuse reflectance infrared Fourier transform spectroscopy. A systematic measurement of the fluorescence intensities and lifetimes of the crushed monocrystalline diamonds as a function of [N(0)] indicated that [NV(-)] increases nearly linearly with [N(0)] at 100-200 ppm. The trend, however, failed to continue for nanodiamonds with higher [N(0)] (up to 390 ppm) but poorer crystallinity. We attribute the result to a combined effect of fluorescence quenching as well as the lower conversion efficiency of vacancies to NV(-) due to the presence of more impurities and defects in these as-grown diamond crystallites. The principles and practice of fabricating brighter and smaller fluorescent nanodiamonds are discussed.

  15. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    Energy Technology Data Exchange (ETDEWEB)

    Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden)

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  16. Analysis of buried etch-stop layers in silicon by nitrogen-ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Acero, M.C.; Esteve, J.; Montserrat, J. (Centro Nacional de Microelectronica (CNM-CSIC), Bellaterra (Spain)); Perez-Rodriguez, A.; Garrido, B.; Romano-Rodriguez, A.; Morante, J.R. (Barcelona Univ. (Spain). Dept. Fisica Aplicada i Electronica)

    1993-09-01

    The analysis of the etch-stop properties of layers obtained by substoichiometric nitrogen-ion implantation and annealing in silicon has been performed as a function of the implantation conditions. The analysis of the etching efficiency has been tested in TMAH-IPA systems. The results obtained show the need to implant at doses higher than 2 x 10[sup 17] cm[sup -2] to obtain etch-stop layers stable under high-temperature annealing. So, for implantation doses of 5 x 10[sup 17] cm[sup -2], layers stand unetched for times longer than 2 h. The preliminary structural analysis of the samples suggests the presence of an amorphous silicon nitride layer for higher implantation doses. (author).

  17. Nitrogen-doped Sb-rich Si–Sb–Te phase-change material for high-performance phase-change memory

    International Nuclear Information System (INIS)

    Zhou, Xilin; Wu, Liangcai; Song, Zhitang; Cheng, Yan; Rao, Feng; Ren, Kun; Song, Sannian; Liu, Bo; Feng, Songlin

    2013-01-01

    The effects of nitrogen doping on the phase-change performance of Sb-rich Si–Sb–Te materials are systemically investigated, focusing on the chemical state and the role of nitrogen upon crystallization. The tendency of N atoms to bond with Si (SiN x ) in the crystalline film is analyzed by X-ray photoelectron spectroscopy. The microstructures of the materials mixed with Sb 2 Te crystal grains and amorphous Si/SiN x regions are elucidated via in situ transmission electron microscopy, from which a percolation behavior is demonstrated to possibly describe the random crystallization feature in the nucleation-dominated nanocomposite material. The phase-change memory cells based on N-doped Sb-rich Si–Sb–Te materials display more stable and reliable electrical performance than the nitrogen-free ones. An endurance characteristic in the magnitude of 10 7 cycles of the phase-change memory cells is realized with moderate nitrogen addition, meaning that the nitrogen incorporation into Si–Sb–Te material is a suitable method to achieve high-performance phase-change memory for commercial applications

  18. A Revival of Waste: Atmospheric Pressure Nitrogen Plasma Jet Enhanced Jumbo Silicon/Silicon Carbide Composite in Lithium Ion Batteries.

    Science.gov (United States)

    Chen, Bing-Hong; Chuang, Shang-I; Liu, Wei-Ren; Duh, Jenq-Gong

    2015-12-30

    In this study, a jumbo silicon/silicon carbide (Si/SiC) composite (JSC), a novel anode material source, was extracted from solar power industry cutting waste and used as a material for lithium-ion batteries (LIBs), instead of manufacturing the nanolized-Si. Unlike previous methods used for preventing volume expansion and solid electrolyte interphase (SEI), the approach proposed here simply entails applying surface modification to JSC-based electrodes by using nitrogen-atmospheric pressure plasma jet (N-APPJ) treatment process. Surface organic bonds were rearranged and N-doped compounds were formed on the electrodes through applying different plasma treatment durations, and the qualitative examinations of before/after plasma treatment were identified by X-ray photoelectron spectroscopy (XPS) and electron probe microanalyzer (EPMA). The surface modification resulted in the enhancement of electrochemical performance with stable capacity retention and high Coulombic efficiency. In addition, depth profile and scanning electron microscope (SEM) images were executed to determine the existence of Li-N matrix and how the nitrogen compounds change the surface conditions of the electrodes. The N-APPJ-induced rapid surface modification is a major breakthrough for processing recycled waste that can serve as anode materials for next-generation high-performance LIBs.

  19. Annealing effect on thermodynamic and physical properties of mesoporous silicon: A simulation and nitrogen sorption study

    Science.gov (United States)

    Kumar, Pushpendra; Huber, Patrick

    2016-04-01

    Discovery of porous silicon formation in silicon substrate in 1956 while electro-polishing crystalline Si in hydrofluoric acid (HF), has triggered large scale investigations of porous silicon formation and their changes in physical and chemical properties with thermal and chemical treatment. A nitrogen sorption study is used to investigate the effect of thermal annealing on electrochemically etched mesoporous silicon (PS). The PS was thermally annealed from 200˚C to 800˚C for 1 hr in the presence of air. It was shown that the pore diameter and porosity of PS vary with annealing temperature. The experimentally obtained adsorption / desorption isotherms show hysteresis typical for capillary condensation in porous materials. A simulation study based on Saam and Cole model was performed and compared with experimentally observed sorption isotherms to study the physics behind of hysteresis formation. We discuss the shape of the hysteresis loops in the framework of the morphology of the layers. The different behavior of adsorption and desorption of nitrogen in PS with pore diameter was discussed in terms of concave menisci formation inside the pore space, which was shown to related with the induced pressure in varying the pore diameter from 7.2 nm to 3.4 nm.

  20. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  1. Effect of silicon on the structure, tribological behaviour, and mechanical properties of nitrogen-containing chromium-manganese austenitic steels

    International Nuclear Information System (INIS)

    Korshunov, L.G.; Chernenko, N.L.; Gojkhenberg, Yu.N.

    2003-01-01

    The effect of silicon in quantity of 3.5-4.5 mass. % on tribological behaviour is studied for nitrogen-bearing (0.20-0.52 mass. % of nitrogen) chromium-manganese austenitic steels (10Kh15G23S4A0.20, 10Kh16G17N3S4A0.30, 10Kh19G20NS4A0.50, 12Kh19G19NS2A0.50, 10Kh18G19A0.50, 08Kh16G8N10S4A0.18). Mechanical properties and corrosion resistance of the steels are determined. Using metallographic, x-ray diffraction and electron microscopical methods a study is made into structural transformations running in the steels considered under friction and static tension. It is shown that additional silicon alloying of nitrogen-bearing chromium-manganese austenitic steels results in an essential increase of adhesion wear resistance of the materials on retention of low friction coefficient (f=0.25-0.33). A strong silicon effect on steel tribological behaviour is related with planar slip activation and with an increase of austenite strength and heat resistance [ru

  2. Strategy for designing stable and powerful nitrogen-rich high-energy materials by introducing boron atoms.

    Science.gov (United States)

    Wu, Wen-Jie; Chi, Wei-Jie; Li, Quan-Song; Li, Ze-Sheng

    2017-06-01

    One of the most important aims in the development of high-energy materials is to improve their stability and thus ensure that they are safe to manufacture and transport. In this work, we theoretically investigated open-chain N 4 B 2 isomers using density functional theory in order to find the best way of stabilizing nitrogen-rich molecules. The results show that the boron atoms in these isomers are aligned linearly with their neighboring atoms, which facilitates close packing in the crystals of these materials. Upon comparing the energies of nine N 4 B 2 isomers, we found that the structure with alternating N and B atoms had the lowest energy. Structures with more than one nitrogen atom between two boron atoms had higher energies. The energy of N 4 B 2 increases by about 50 kcal/mol each time it is rearranged to include an extra nitrogen atom between the two boron atoms. More importantly, our results also show that boron atoms stabilize nitrogen-rich molecules more efficiently than carbon atoms do. Also, the combustion of any isomer of N 4 B 2 releases more heat than the corresponding isomer of N 4 C 2 does under well-oxygenated conditions. Our study suggests that the three most stable N 4 B 2 isomers (BN13, BN24, and BN34) are good candidates for high-energy molecules, and it outlines a new strategy for designing stable boron-containing high-energy materials. Graphical abstract The structural characteristics, thermodynamic stabilities, and exothermic properties of nitrogen-rich N 4 B 2 isomers were investigated by means of density functional theory.

  3. Threshold stoichiometry for beam induced nitrogen depletion of SiN

    International Nuclear Information System (INIS)

    Timmers, H.; Weijers, T.D.M.; Elliman, R.G.; Uribasterra, J.; Whitlow, H.J.; Sarwe, E.-L.

    2002-01-01

    Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species, the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3>N/Si≥1, below which the films are stable against nitrogen depletion. Above this threshold, depletion is essentially linear with incident fluence. The depletion rate correlates non-linearly with the electronic energy loss of the projectile ion in the film. Sufficiently long exposure of nitrogen-rich films renders the mechanism, which prevents depletion of nitrogen-poor films, ineffective. Compromising depth-resolution, nitrogen depletion from SiN films during ERD analysis can be reduced significantly by using projectile beams with low atomic numbers

  4. Nitrogen-rich heterocycles as reactivity retardants in shocked insensitive explosives.

    Science.gov (United States)

    Manaa, M Riad; Reed, Evan J; Fried, Laurence E; Goldman, Nir

    2009-04-22

    We report the first quantum-based multiscale simulations to study the reactivity of shocked perfect crystals of the insensitive energetic material triaminotrinitrobenzene (TATB). Tracking chemical transformations of TATB experiencing overdriven shock speeds of 9 km/s for up to 0.43 ns and 10 km/s for up to 0.2 ns reveal high concentrations of nitrogen-rich heterocyclic clusters. Further reactivity of TATB toward the final decomposition products of fluid N(2) and solid carbon is inhibited due to the formation of these heterocycles. Our results thus suggest a new mechanism for carbon-rich explosive materials that precedes the slow diffusion-limited process of forming the bulk solid from carbon clusters and provide fundamental insight at the atomistic level into the long reaction zone of shocked TATB.

  5. Long-term nitrogen addition decreases carbon leaching in a nitrogen-rich forest ecosystem

    Directory of Open Access Journals (Sweden)

    X. Lu

    2013-06-01

    Full Text Available Dissolved organic carbon (DOC plays a critical role in the carbon (C cycle of forest soils, and has been recently connected with global increases in nitrogen (N deposition. Most studies on effects of elevated N deposition on DOC have been carried out in N-limited temperate regions, with far fewer data available from N-rich ecosystems, especially in the context of chronically elevated N deposition. Furthermore, mechanisms for excess N-induced changes of DOC dynamics have been suggested to be different between the two kinds of ecosystems, because of the different ecosystem N status. The purpose of this study was to experimentally examine how long-term N addition affects DOC dynamics below the primary rooting zones (the upper 20 cm soils in typically N-rich lowland tropical forests. We have a primary assumption that long-term continuous N addition minimally affects DOC concentrations and effluxes in N-rich tropical forests. Experimental N addition was administered at the following levels: 0, 50, 100 and 150 kg N ha−1 yr−1, respectively. Results showed that seven years of N addition significantly decreased DOC concentrations in soil solution, and chemo-physical controls (solution acidity change and soil sorption rather than biological controls may mainly account for the decreases, in contrast to other forests. We further found that N addition greatly decreased annual DOC effluxes from the primary rooting zone and increased water-extractable DOC in soils. Our results suggest that long-term N deposition could increase soil C sequestration in the upper soils by decreasing DOC efflux from that layer in N-rich ecosystems, a novel mechanism for continued accumulation of soil C in old-growth forests.

  6. Silicon rich nitride ring resonators for rare - earth doped telecommunications-band amplifiers pumped at the O-band.

    Science.gov (United States)

    Xing, P; Chen, G F R; Zhao, X; Ng, D K T; Tan, M C; Tan, D T H

    2017-08-22

    Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.

  7. Oxidation Properties of Nitrogen-Doped Silicon Films Deposited from Si2H6 and NH3

    Science.gov (United States)

    Scheid, Emmanuel; Boyer, Pierre; Samitier, Josep; Hassani, Ahmed

    1994-03-01

    Si2H6/NH3 gas mixture was employed to obtain, by low-pressure chemical vapor deposition (LPCVD) at low temperature, nitrogen-doped silicon (NIDOS) films with various N/Si ratios. Thermal oxide was grown in dry oxygen at 900°C and 1100°C on NIDOS films. The result indicates that the nitrogen content of NIDOS films, assessed by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), greatly influences their oxidation rate.

  8. Synthesis of polybenzoxazine based nitrogen-rich porous carbons for carbon dioxide capture

    Science.gov (United States)

    Wan, Liu; Wang, Jianlong; Feng, Chong; Sun, Yahui; Li, Kaixi

    2015-04-01

    Nitrogen-rich porous carbons (NPCs) were synthesized from 1,5-dihydroxynaphthalene, urea, and formaldehyde based on benzoxazine chemistry by a soft-templating method with KOH chemical activation. They possess high surface areas of 856.8-1257.8 m2 g-1, a large pore volume of 0.15-0.65 cm3 g-1, tunable pore structure, high nitrogen content (5.21-5.32 wt%), and high char yields. The amount of the soft-templating agent F127 has multiple influences on the textural and chemical properties of the carbons, affecting the surface area and pore structure, impacting the compositions of nitrogen species and resulting in an improvement of the CO2 capture performance. At 1 bar, high CO2 uptake of 4.02 and 6.35 mmol g-1 at 25 and 0 °C was achieved for the sample NPC-2 with a molar ratio of F127 : urea = 0.010 : 1. This can be attributed to its well-developed micropore structure and abundant pyridinic nitrogen, pyrrolic nitrogen and pyridonic nitrogen functionalities. The sample NPC-2 also exhibits a remarkable selectivity for CO2/N2 separation and a fast adsorption/desorption rate and can be easily regenerated. This suggests that the polybenzoxazine-based NPCs are desirable for CO2 capture because of possessing a high micropore surface area, a large micropore volume, appropriate pore size distribution, and a large number of basic nitrogen functionalities.Nitrogen-rich porous carbons (NPCs) were synthesized from 1,5-dihydroxynaphthalene, urea, and formaldehyde based on benzoxazine chemistry by a soft-templating method with KOH chemical activation. They possess high surface areas of 856.8-1257.8 m2 g-1, a large pore volume of 0.15-0.65 cm3 g-1, tunable pore structure, high nitrogen content (5.21-5.32 wt%), and high char yields. The amount of the soft-templating agent F127 has multiple influences on the textural and chemical properties of the carbons, affecting the surface area and pore structure, impacting the compositions of nitrogen species and resulting in an improvement of the

  9. Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

    Science.gov (United States)

    Abadli, S.; Mansour, F.; Perrera, E. Bedel

    We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

  10. On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

    OpenAIRE

    Aceves-Mijares, M.; González-Fernández, A. A.; López-Estopier, R.; Luna-López, A.; Berman-Mendoza, D.; Morales, A.; Falcony, C.; Domínguez, C.; Murphy-Arteaga, R.

    2012-01-01

    Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept th...

  11. Plant root proliferation in nitrogen-rich patches confers competitive advantage

    Science.gov (United States)

    Robinson, D.; Hodge, A.; Griffiths, B. S.; Fitter, A. H.

    1999-01-01

    Plants respond strongly to environmental heterogeneity, particularly below ground, where spectacular root proliferations in nutrient-rich patches may occur. Such 'foraging' responses apparently maximize nutrient uptake and are now prominent in plant ecological theory. Proliferations in nitrogen-rich patches are difficult to explain adaptively, however. The high mobility of soil nitrate should limit the contribution of proliferation to N capture. Many experiments on isolated plants show only a weak relation between proliferation and N uptake. We show that N capture is associated strongly with proliferation during interspecific competition for finite, locally available, mixed N sources, precisely the conditions under which N becomes available to plants on generally infertile soils. This explains why N-induced root proliferation is an important resource-capture mechanism in N-limited plant communities and suggests that increasing proliferation by crop breeding or genetic manipulation will have a limited impact on N capture by well-fertilized monocultures.

  12. Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide

    Science.gov (United States)

    Friedrich, D.; Schmidt, B.; Heinig, K. H.; Liedke, B.; Mücklich, A.; Hübner, R.; Wolf, D.; Kölling, S.; Mikolajick, T.

    2013-09-01

    Sponge-like Si nanostructures embedded in SiO2 were fabricated by spinodal decomposition of sputter-deposited silicon-rich oxide with a stoichiometry close to that of silicon monoxide. After thermal treatment a mean feature size of about 3 nm was found in the phase-separated structure. The structure of the Si-SiO2 nanocomposite was investigated by energy-filtered transmission electron microscopy (EFTEM), EFTEM tomography, and atom probe tomography, which revealed a percolated Si morphology. It was shown that the percolation of the Si network in 3D can also be proven on the basis of 2D EFTEM images by comparison with 3D kinetic Monte Carlo simulations.

  13. Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide

    International Nuclear Information System (INIS)

    Friedrich, D.; Schmidt, B.; Heinig, K. H.; Liedke, B.; Mücklich, A.; Hübner, R.; Wolf, D.; Kölling, S.; Mikolajick, T.

    2013-01-01

    Sponge-like Si nanostructures embedded in SiO 2 were fabricated by spinodal decomposition of sputter-deposited silicon-rich oxide with a stoichiometry close to that of silicon monoxide. After thermal treatment a mean feature size of about 3 nm was found in the phase-separated structure. The structure of the Si-SiO 2 nanocomposite was investigated by energy-filtered transmission electron microscopy (EFTEM), EFTEM tomography, and atom probe tomography, which revealed a percolated Si morphology. It was shown that the percolation of the Si network in 3D can also be proven on the basis of 2D EFTEM images by comparison with 3D kinetic Monte Carlo simulations

  14. EFFECT OF SILICON, NITROGEN AND POTASSIUM IN THE INCIDENCE OF TOMATO PIN WORM IN INDUSTRIAL TOMATO PLANTS

    Directory of Open Access Journals (Sweden)

    Marília Cristina dos Santos2*

    2013-12-01

    of two stems per plant. It was observed a decrease in the number of pinworm leaf mines with an increase in silicon and potassium doses and an increase in the number of mines with an increase on nitrogen doses.

  15. Nitrogen concentration profiles in oxy-nitrited high-speed steel

    International Nuclear Information System (INIS)

    Barcz, A.; Turos, A.; Wielunski, L.

    1976-01-01

    Nuclear microanalysis has been applied for the determination of in-depth concentration profiles of nitrogen in oxy-nitrided high-speed steel. The concentration profiles were deduced from measurements of the nitrogen content, determined by means of the 14 N(d,α) 12 C reaction for the set of initially identical samples after the removal of surface layers of sequentially increasing thicknesses. The 1.2 MeV deuterons were obtained from the Institute of Nuclear Research Van de Graaf accelerator LECH. The α-particles produced in the 14 N(d,α) 12 C reaction were detected by means of silicon surface barrier detector mounted at 150 deg C. Strong blocking of the nitrogen diffusion due to the presence of oxygen has been observed. The accuracy of nitrogen detection is of the order of 5% for nitrogen-rich regions and 10% for the matrix. However, the local non-uniformity of the steel may cause a spread of about 20% of the measured values. (T.G.)

  16. Nitrogen doping efficiency during vapor phase epitaxy of 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Rowland, L.B.; Brandt, C.D. [Northrop Grumman Science and Technology Center, Pittsburgh, PA (United States); Burk, A.A. Jr. [Northrop Grumman Advanced Technology Lab., Baltimore, MD (United States)

    1998-06-01

    This work examines the interrelationships among doping efficiency, mole fraction, and Si/C ratio for intentional doping of 4H-SiC during vapor phase epitaxy using N{sub 2}. For four Si/C ratios, the doping concentration increased linearly as a function of increasing N{sub 2} partial pressure with a slope of 1.0 {+-} 0.03. Variation of propane mole fraction while the SiH{sub 4} and N{sub 2} mole fractions were kept constant revealed two different modes of nitrogen incorporation, corresponding to carbon-rich and silicon-rich conditions. (orig.) 14 refs.

  17. Constraints on the properties of Pluto's nitrogen-ice rich layer from convection simulations

    Science.gov (United States)

    Wong, T.; McKinnon, W. B.; Schenk, P.

    2016-12-01

    Pluto's Sputnik Planum basin (informally named) displays regular cellular patterns strongly suggesting that solid-state convection is occurring in a several-kilometers-deep nitrogen-ice rich layer (McKinnon et al., Convection in a volatile nitrogen-ice-rich layer drives Pluto's geological vigour, Nature 534, 82-85, 2016). We investigate the behavior of thermal convection in 2-D that covers a range of parameters applicable to the nitrogen ice layer to constrain its properties such that these long-wavelength surface features can be explained. We perform a suite of numerical simulations of convection with basal heating and temperature-dependent viscosity in either exponential form or Arrhenius form. For a plausible range of Rayleigh numbers and viscosity contrasts for solid nitrogen, convection can occur in all possible regimes: sluggish lid, transitional, or stagnant lid, or the layer could be purely conducting. We suggest the range of depth and temperature difference across the layer for convection to occur. We observe that the plume dynamics can be widely different in terms of the aspect ratio of convecting cells, or the width and spacing of plumes, and also in the lateral movement of plumes. These differences depend on the regime of convection determined by the Rayleigh number and the actual viscosity contrast across the layer, but is not sensitive to whether the viscosity is in Arrhenius or exponential form. The variations in plume dynamics result in different types of dynamic topography, which can be compared with the observed horizontal and vertical scales of the cells in Sputnik Planum. Based on these simulations we suggest several different possibilities for the formation and evolution of Sputnik Planum, which may be a consequence of the time-dependent behavior of thermal convection.

  18. Simultaneous determination of boron, carbon and nitrogen in silicon by deuteron activation analysis

    International Nuclear Information System (INIS)

    He, Shiyu; Wang, Yinsong; Jin, Baikang; Hua, Zhifen; Zhao, Kaihua

    1984-01-01

    The paper describes simultaneous determination of trace quantities of B, C and N in semiconductor silicon by nuclear reaction of 10 B(d, n) 11 C(T 1/2 = 20.3 min), 11 B(d, 2n) 11 C, 12 C(d, n) 13 N(T 1/2 = 9.96 min) and 14 N(d, n) 15 O(T 1/2 = 2.03 min) with deuterons from a 1.2 m cyclotron in our institute. An inert-gas fusion technique is adopted for rapid radiochemical separation after irradiation of the samples. 11 C, 13 N and 15 O are absorbed in ascarite 5A molecular sieve cooled in liquid nitrogen and Hopcalite reagent at a temperature of 650 deg C respectively. Positron Annihilation events of each produced nucleus are counted by a γ - γ coincidence measuring system. B, C and N contents of about several ten parts per billion in silicon are then calculated simultaneously by a relatively quantitative method. Relative standard deviation for C, B and N are less than +-50% respectively. This method is simple, rapid and sensitive for estimating light element content in silicon material. (author)

  19. Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

    International Nuclear Information System (INIS)

    Oude Elferink, J.B.

    1989-01-01

    In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

  20. Determination of oxygen, nitrogen, and silicon in Nigerian fossil fuels by 14 MeV neutron activation analysis

    International Nuclear Information System (INIS)

    Hannan, M.A.; Oluwole, A.F.; Kehinde, L.O.; Borisade, A.B.

    2003-01-01

    Classification, assessment, and utilization of coal and crude oil extracts are enhanced by analysis of their oxygen content. Values of oxygen obtained 'by difference' from chemical analysis have proved inaccurate. The oxygen, nitrogen, and silicon content of Nigerian coal samples, crude oils, bitumen extracts, and tar sand samples were measured directly using instrumental fast neutron activation analysis (FNAA). The total oxygen in the coal ranges from 5.20% to 23.3%, in the oil and extracts from 0.14% to 1.08%, and in the tar sands from 38% to 47%. The nitrogen content in the coal ranges from 0.54% to 1.35%, in the crude oil and bitumen extracts from ≤ 0.014% to 0.490%, and in the tar sands from 0.082% to 0.611%. The silicon content in the coal ranges from 1.50% to 8.86%; in the oil and the bitumen extracts it is <1%, and in the tar sands between 25.1% and 37.5%. The results show that Nigerian coals are mostly sub-bituminous. However, one of the samples showed bituminous properties as evidenced by the dry ash-free (daf) percent of carbon obtained. This same sample indicated a higher ash content resulting in a comparatively high percentage of silicon. In oils and tar sands from various locations, a comparison of elements is made. (author)

  1. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  2. Development of commercial nitrogen-rich stainless steels

    International Nuclear Information System (INIS)

    Liljas, M.

    1999-01-01

    This paper reviews the development of nitrogen alloyed stainless steels. Nitrogen alloying of austenitic stainless steels started at an early stage and was to a large extent caused by nickel shortage. However, direct technical advantages such as increased strength of the nitrogen alloyed steels made them attractive alternatives to the current steels. It was not until the advent of the AOD (argon oxygen decarburisation) process in the late 1960s that nitrogen alloying could be controlled to such accuracy that it became successful commercially on a broader scale. The paper describes production aspects and how nitrogen addition influences microstructure and the resulting properties of austenitic and duplex stainless steels. For austenitic steels there are several reasons for nitrogen alloying. Apart from increasing strength nitrogen also improves structural stability, work hardening and corrosion resistance. For duplex steels nitrogen also has a decisive effect in controlling the microstructure during thermal cycles such as welding. (orig.)

  3. New routes to nitrogen-rich transition metal nitrides: Synthesis of novel polymorphs of Hf3N4

    Science.gov (United States)

    Salamat, Ashkan; Hector, A.; Gray, B.; Kimber, S.; Bouvier, P.; McMillan, P.

    2013-06-01

    One of the most obvious features of transition metal nitride chemistry is that the maximum formal oxidation state of the metal is rarely as high as in the corresponding oxides or fluorides. Much of the interest in the high oxidation phases stems from the desire to identify the next generation of photocatalytic materials with tuneable bandgaps. Experiments in the laser heated diamond anvil cell (LHDAC) between the direct reaction of metals and nitrogen have previously produced a number of important new main group nitride phases. This technique has also demonstrated its potential for formation of new nitrogen-rich transition metal nitride phases. Alternative methods with the development of ``soft'' routes to new phases with high nitrogen content also offer the possibility of obtaining metastable phases through topotactic conversions. Using LHDAC in situ with synchrotron angle dispersive diffraction techniques we have crystallised at high pressures and temperatures two novel polymorphs of Hf3N4. Starting with an amide-derived nanocrystalline Hf3N4 sample we have identified a novel tetragonal (I4/ m) polymorph at 15 GPa and 1500K and a second high pressure orthorhombic (Pnma) polymorph at 30 GPa and 2000 K. This study demonstrates that the combination of precursor-based synthesis and high-pressure crystallization could be very productive in synthesis of such nitrogen-rich phases.

  4. Release of low molecular weight silicones and platinum from silicone breast implants.

    Science.gov (United States)

    Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

    1997-12-01

    We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

  5. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

    2016-07-18

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  6. On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. Aceves-Mijares

    2012-01-01

    Full Text Available Silicon Rich Oxide (SRO has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD. In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.

  7. Growth and Nitrogen Fixation in Silicon and/or Potassium Fed Chickpeas Grown under Drought and Well Watered Conditions

    Directory of Open Access Journals (Sweden)

    Fawaz Kurdali

    2013-08-01

    Full Text Available A pot experiment was conducted to study the effects of silicon (Si and/or potassium (K on plant growth, nitrogen uptake and N2-fixation in water stressed (FC1 and well watered (FC2 chickpea plants using 15N and 13C isotopes. Three fertilizer rates of Si (Si50, Si100 and Si200 and one fertilizer rate of K were used. For most of the growth parameters, it was found that Si either alone or in combination with K was more effective to alleviate water stress than K alone. Increasing soil water level from FC1 to FC2 often had a positive impact on values of almost all studied parameters. The Si100K+ (FC1 and Si50K+ (FC2 treatments gave high enough amounts of N2-fixation, higher dry matter production and greater nitrogen yield. The percent increments of total N2-fixed in the above mentioned treatments were 51 and 47% over their controls, respectively. On the other hand, increasing leave’s dry matter in response to the solely added Si (Si50K- and Si100K- is associated with lower Δ13C under both watering regimes. This may indicate that Si fertilization had a beneficial effect on water use efficiency (WUE. Hence, Δ13C could be an adequate indicator of WUE in response to the exogenous supply of silicon to chickpea plants. Our results highlight that Si is not only involved in amelioration of growth and in maintaining of water status but it can be also considered an important element for the symbiotic performance of chickpea plants. It can be concluded that the synergistic effect of silicon and potassium fertilization with adequate irrigation improves growth and nitrogen fixation in chickpea plants.

  8. Sensitization of erbium in silicon-rich silica : the effect of annealing temperature and hydrogen passivation

    International Nuclear Information System (INIS)

    Wilkinson, A.R.; Forcales, M.; Elliman, R.G.

    2005-01-01

    This paper reports on the effect of annealing temperature and hydrogen passivation on the excitation cross-section and photoluminescence of erbium in silicon-rich silica. Samples were prepared by co-implantation of Si and Er into SiO 2 followed by a single thermal anneal at temperatures ranging from 800 to 1100 degrees C, and with or without hydrogen passivation performed at 500 degrees C. Using time-resolved photoluminescence, the effective erbium excitation cross-section is shown to increase by a factor 3, while the number of optically active erbium ions decreases by a factor of 4 with increasing annealing temperature. Hydrogen passivation is shown to increase the luminescence intensity and to shorten the luminescence lifetime at 1.54 μm only in the presence of Si nanocrystals. The implications fo these results for realizing a silicon-based optical amplifier are also discussed. (author). 19 refs., 3 figs

  9. Surface and morphological features of laser-irradiated silicon under vacuum, nitrogen and ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Hayat, Asma, E-mail: asmahayat@gcu.edu.pk; Bashir, Shazia; Akram, Mahreen; Mahmood, Khaliq; Iqbal, Muhammad Hassan

    2015-12-01

    Highlights: • Laser irradiation effects on Si surface have been explored. • An Excimer Laser was used as a source. • SEM analysis was performed to explore surface morphology. • Raman spectroscopy analysis was carried out to find crystallographical alterations. - Abstract: Laser-induced surface and structural modification of silicon (Si) has been investigated under three different environments of vacuum, nitrogen (100 Torr) and ethanol. The interaction of 1000 pulses of KrF (λ ≈ 248 nm, τ ≈ 18 ns, repetition rate ≈ 30 Hz) Excimer laser at two different fluences of 2.8 J/cm{sup 2} and 4 J/cm{sup 2} resulted in formation of various kinds of features such as laser induced periodic surface structures (LIPSS), spikes, columns, cones and cracks. Surface morphology has been observed by Scanning Electron Microscope (SEM). Whereas, structural modification of irradiated targets is explored by Raman spectroscopy. SEM analysis exhibits a non-uniform distribution of micro-scale pillars and spikes at the central ablated regime of silicon irradiated at low laser fluence of 2.8 J/cm{sup 2} under vacuum. Whereas cones, pits, cavities and ripples like features are seen at the boundaries. At higher fluence of 4 J/cm{sup 2}, laser induced periodic structures as well as micro-columns are observed. In the case of ablation in nitrogen environment, melting, splashing, self-organized granular structures and cracks along with redeposition are observed at lower fluence. Such types of small scaled structures in nitrogen are attributed to confinement and shielding effects of nitrogen plasma. Whereas, a crater with multiple ablative layers is formed in the case of ablation at higher fluence. Significantly different surface morphology of Si is observed in the case of ablation in ethanol. It reveals the formation of cavities along with small scale pores and less redeposition. These results reveal that the growth of surface and morphological features of irradiated Si are strongly

  10. Surface and morphological features of laser-irradiated silicon under vacuum, nitrogen and ethanol

    International Nuclear Information System (INIS)

    Hayat, Asma; Bashir, Shazia; Akram, Mahreen; Mahmood, Khaliq; Iqbal, Muhammad Hassan

    2015-01-01

    Highlights: • Laser irradiation effects on Si surface have been explored. • An Excimer Laser was used as a source. • SEM analysis was performed to explore surface morphology. • Raman spectroscopy analysis was carried out to find crystallographical alterations. - Abstract: Laser-induced surface and structural modification of silicon (Si) has been investigated under three different environments of vacuum, nitrogen (100 Torr) and ethanol. The interaction of 1000 pulses of KrF (λ ≈ 248 nm, τ ≈ 18 ns, repetition rate ≈ 30 Hz) Excimer laser at two different fluences of 2.8 J/cm 2 and 4 J/cm 2 resulted in formation of various kinds of features such as laser induced periodic surface structures (LIPSS), spikes, columns, cones and cracks. Surface morphology has been observed by Scanning Electron Microscope (SEM). Whereas, structural modification of irradiated targets is explored by Raman spectroscopy. SEM analysis exhibits a non-uniform distribution of micro-scale pillars and spikes at the central ablated regime of silicon irradiated at low laser fluence of 2.8 J/cm 2 under vacuum. Whereas cones, pits, cavities and ripples like features are seen at the boundaries. At higher fluence of 4 J/cm 2 , laser induced periodic structures as well as micro-columns are observed. In the case of ablation in nitrogen environment, melting, splashing, self-organized granular structures and cracks along with redeposition are observed at lower fluence. Such types of small scaled structures in nitrogen are attributed to confinement and shielding effects of nitrogen plasma. Whereas, a crater with multiple ablative layers is formed in the case of ablation at higher fluence. Significantly different surface morphology of Si is observed in the case of ablation in ethanol. It reveals the formation of cavities along with small scale pores and less redeposition. These results reveal that the growth of surface and morphological features of irradiated Si are strongly dependent upon the

  11. Energetic salts of the binary 5-cyanotetrazolate anion ([C2N5]-) with nitrogen-rich cations.

    Science.gov (United States)

    Crawford, Margaret-Jane; Klapötke, Thomas M; Martin, Franz A; Miró Sabaté, Carles; Rusan, Magdalena

    2011-02-01

    The reaction of cyanogen (NC-CN) with MN(3) (M=Na, K) in liquid SO(2) leads to the formation of the 5-cyanotetrazolate anion as the monohemihydrate sodium (1·1.5 H(2)O) and potassium (2) salts, respectively. Both 1·1.5 H(2)O and 2 were used as starting materials for the synthesis of a new family of nitrogen-rich salts containing the 5-cyanotetrazolate anion and nitrogen-rich cations, namely ammonium (3), hydrazinium (4), semicarbazidium (5), guanidinium (6), aminoguanidinium (7), diaminoguanidinium (8), and triaminoguanidinium (9). Compounds 1-9 were synthesised in good yields and characterised by using analytical and spectroscopic methods. In addition, the crystal structures of 1·1.5 H(2)O, 2, 3, 5, 6, and 9·H(2)O were determined by using low-temperature single-crystal X-ray diffraction. An insight into the hydrogen bonding in the solid state is described in terms of graph-set analysis. Differential scanning calorimetry and sensitivity tests were used to assess the thermal stability and sensitivity against impact and friction of the materials, respectively. For the assessment of the energetic character of the nitrogen-rich salts 3-9, quantum chemical methods were used to determine the constant volume energies of combustion, and these values were used to calculate the detonation velocity and pressure of the salts using the EXPLO5 computer code. Additionally, the performances of formulations of the new compounds with ammonium nitrate and ammonium dinitramide were also predicted. Lastly, the ICT code was used to determine the gases and heats of explosion released upon decomposition of the 5-cyanotetrazolate salts. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Pulsed 1064 nm Nd-YAG Laser Deposition of Titanium on Silicon in a Nitrogen Environment

    Directory of Open Access Journals (Sweden)

    Wilson Garcia

    1999-12-01

    Full Text Available Pulsed laser deposition (PLD technique was demonstrated for the deposition of titanium nitride (TiN thin films on Si (100 substrates. A 1064 nm pulsed Nd-YAG laser is focused on a titanium (99.5% target in a nitrogen environment to generate the atomic flux needed for the film deposition. Spectroscopic analysis of the plasma emission indicates the presence of atomic titanium and nitrogen, which are the precursors of TiN. Images of the films grown at different laser pulse energies show an increase in the number and size of deposited droplets and clusters with increasing laser pulse energy. A decrease in cluster and droplet size is also observed, with an increase in substrate temperature. EDS data show an increase in the titanium peak relative to the silicon as the ambient nitrogen pressure is decreased. An increase in deposition time was found to result in large clusters and irregularly shaped structures on the substrate. Post-deposition annealing of the samples enhanced the crystallinity of the film.

  13. Pyrolysis of high-ash sewage sludge in a circulating fluidized bed reactor for production of liquids rich in heterocyclic nitrogenated compounds.

    Science.gov (United States)

    Zuo, Wu; Jin, Baosheng; Huang, Yaji; Sun, Yu; Li, Rui; Jia, Jiqiang

    2013-01-01

    A circulating fluidized bed reactor was used for pyrolyzing sewage sludge with a high ash content to produce liquids rich in heterocyclic nitrogenated compounds. GC/MS and FTIR analyses showed that heterocyclic nitrogenated compounds and hydrocarbons made up 38.5-61.21% and 2.24-17.48% of the pyrolysis liquids, respectively. A fluidized gas velocity of 1.13 m/s, a sludge feed rate of 10.78 kg/h and a particle size of 1-2mm promoted heterocyclic nitrogenated compound production. Utilizing heterocyclic nitrogenated compounds as chemical feedstock could be a way for offsetting the cost of sewage sludge treatment. Copyright © 2012 Elsevier Ltd. All rights reserved.

  14. Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

    NARCIS (Netherlands)

    Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

    2002-01-01

    Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

  15. Nitrogen and phosphorus resorption in a neotropical rain forest of a nutrient-rich soil.

    Science.gov (United States)

    Martínez-Sánchez, José Luis

    2005-01-01

    In tropical forests with nutrient-rich soil tree's nutrient resorption from senesced leaves has not always been observed to be low. Perhaps this lack of consistence is partly owing to the nutrient resorption methods used. The aim of the study was to analyse N and P resorption proficiency from tropical rain forest trees in a nutrient-rich soil. It was hypothesised that trees would exhibit low nutrient resorption in a nutrient-rich soil. The soil concentrations of total N and extractable P, among other physical and chemical characteristics, were analysed in 30 samples in the soil surface (10 cm) of three undisturbed forest plots at 'Estaci6n de Biologia Los Tuxtlas' on the east coast of Mexico (18 degrees 34' - 18 degrees 36' N, 95 degrees 04' - 95 degrees 09' W). N and P resorption proficiency were determined from senescing leaves in 11 dominant tree species. Nitrogen was analysed by microkjeldahl digestion with sulphuric acid and distilled with boric acid, and phosphorus was analysed by digestion with nitric acid and perchloric acid. Soil was rich in total N (0.50%, n = 30) and extractable P (4.11 microg g(-1) n = 30). As expected, trees showed incomplete N (1.13%, n = 11) and P (0.11%, n = 1) resorption. With a more accurate method of nutrient resorption assessment, it is possible to prove that a forest community with a nutrient-rich soil can have low levels of N and P resorption.

  16. Characterization of carbon, nitrogen, oxygen and refractory metals in binary and ternary silicon-based films using ion beam methods

    International Nuclear Information System (INIS)

    Somatri-Bouamrane, R.

    1996-01-01

    Ion beam methods (non Rutherford backscattering, nuclear reactions) have been carried out in order to characterize silicon-based films. The cross sections for the reactions 12 C(α,α), 14 N(α,α), 16 O(α,α), 28 Si(α,α) and 14 N(α,p) have been measured within 2 and 7 MeV. CVD beta SiC films could be analyzed and the interface between silicon carbide and the (100) silicon substrate was studied. The epitaxial growth of the beta SiC film could be modelled by comparing the results obtained with ion beam analysis, infrared spectroscopy and electron microscopy. Moreover, the stoichiometry of low pressure CVD Me-Si-N (Me=Re, W, Ti, Ta) ternary systems was studied. The evolution of the nitrogen content in W-Si-N systems allowed to study their stability with respect to the annealing conditions. (N.T.)

  17. Hydrophobic recovery of repeatedly plasma-treated silicone rubber .2. A comparison of the hydrophobic recovery in air, water, or liquid nitrogen

    NARCIS (Netherlands)

    Everaert, EP; VanderMei, HC; Busscher, HJ

    1996-01-01

    Surfaces of medical grade silicone rubber (Q7-4750, Dow Coming) were modified by repeated (six times) RF plasma treatments using various discharge gases: oxygen, argon, carbon dioxide, and ammonia. The treated samples were stored for a period of 3 months in ambient air, water, or liquid nitrogen.

  18. Richness, biomass, and nutrient content of a wetland macrophyte community affect soil nitrogen cycling in a diversity-ecosystem functioning experiment

    Science.gov (United States)

    Korol, Alicia R.; Ahn, Changwoo; Noe, Gregory

    2016-01-01

    The development of soil nitrogen (N) cycling in created wetlands promotes the maturation of multiple biogeochemical cycles necessary for ecosystem functioning. This development proceeds from gradual changes in soil physicochemical properties and influential characteristics of the plant community, such as competitive behavior, phenology, productivity, and nutrient composition. In the context of a 2-year diversity experiment in freshwater mesocosms (0, 1, 2, 3, or 4 richness levels), we assessed the direct and indirect impacts of three plant community characteristics – species richness, total biomass, and tissue N concentration – on three processes in the soil N cycle – soil net ammonification, net nitrification, and denitrification potentials. Species richness had a positive effect on net ammonification potential (NAP) through higher redox potentials and likely faster microbial respiration. All NAP rates were negative, however, due to immobilization and high rates of ammonium removal. Net nitrification was inhibited at higher species richness without mediation from the measured soil properties. Higher species richness also inhibited denitrification potential through increased redox potential and decreased nitrification. Both lower biomass and/or higher tissue ratios of carbon to nitrogen, characteristics indicative of the two annual plants, were shown to have stimulatory effects on all three soil N processes. The two mediating physicochemical links between the young macrophyte community and microbial N processes were soil redox potential and temperature. Our results suggest that early-successional annual plant communities play an important role in the development of ecosystem N multifunctionality in newly created wetland soils.

  19. Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes.

    Science.gov (United States)

    Tali, S A Safiabadi; Soleimani-Amiri, S; Sanaee, Z; Mohajerzadeh, S

    2017-02-10

    We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C 2 H 2 and N 2 gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm 2 (45 F/cm 3 ) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 10 3  Wh/m 3 (8.3 × 10 6  J/m 3 ) and ultra-high power density of 2.6 × 10 8  W/m 3 which is among the highest reported values.

  20. Nitrogen assimilation and short term retention in a nutrient-rich tidal freshwater marsh – a whole ecosystem 15N enrichment study

    Directory of Open Access Journals (Sweden)

    B. Gribsholt

    2007-01-01

    Full Text Available An intact tidal freshwater marsh system (3477 m2 was labelled by adding 15N-ammonium as a tracer to the flood water inundating the ecosystem. The appearance and retention of 15N-label in different marsh components (leaves, roots, sediment, leaf litter and invertebrate fauna was followed over 15 days. This allowed us to elucidate the direct assimilation and dependence on creek-water nitrogen on a relatively short term and provided an unbiased assessment of the relative importance of the various compartments within the ecosystem. Two separate experiments were conducted, one in spring/early summer (May 2002 when plants were young and building up biomass; the other in late summer (September 2003 when macrophytes were in a flowering or early senescent state. Nitrogen assimilation rate (per hour inundated was >3 times faster in May compared to September. On both occasions, however, the results clearly revealed that the less conspicuous compartments such as leaf litter and ruderal vegetations are more important in nitrogen uptake and retention than the prominent reed (Phragmites australis meadows. Moreover, short-term nitrogen retention in these nutrient rich marshes occurs mainly via microbial pathways associated with the litter and sediment. Rather than direct uptake by macrophytes, it is the large reactive surface area provided by the tidal freshwater marsh vegetation that is most crucial for nitrogen transformation, assimilation and short term retention in nutrient rich tidal freshwater marshes. Our results clearly revealed the dominant role of microbes in initial nitrogen retention in marsh ecosystems.

  1. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

    International Nuclear Information System (INIS)

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-01-01

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

  2. Modification of silicon nitride and silicon carbide surfaces for food and biosensor applications

    NARCIS (Netherlands)

    Rosso, M.

    2009-01-01

    Silicon-rich silicon nitride (SixN4, x > 3) is a robust insulating material widely used for the coating of microdevices: its high chemical and mechanical inertness make it a material of choice for the reinforcement of fragile microstructures (e.g. suspended microcantilevers, micro-fabricated

  3. Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

    International Nuclear Information System (INIS)

    Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Corni, F.; Tonini, R.

    1997-01-01

    Positron annihilation spectroscopy (PAS) is used to study Si-rich SiO 2 samples prepared by implantation of Si (160 keV) ions at doses in the range 3x10 16 endash 3x10 17 cm -2 and subsequent thermal annealing at high temperature (up to 1100 degree C). Samples implanted at doses higher than 5x10 16 cm -2 and annealed above 1000 degree C showed a PAS spectrum with an annihilation peak broader than the unimplanted sample. We discuss how these results are related to the process of silicon precipitation inside SiO 2 . copyright 1997 American Institute of Physics

  4. Nitrogen and silicon fertilization of upland rice Adubação nitrogenada e silicatada do arroz de terras altas

    Directory of Open Access Journals (Sweden)

    Munir Mauad

    2003-12-01

    Full Text Available Silicon is not considered an essential element for plant development and growth, but its absorption brings several benefits to some crops, especially rice, by increasing cellular wall thickness, providing mechanical resistance to the penetration of fungi, improving the opening angle of leaves and making them more erect, decreasing self-shading and increasing resistance to lodging, especially under high nitrogen rates. To evaluate the effects of nitrogen and silicon fertilization on vegetative and yield components, plant height, and yield of rice cultivar IAC 202, an experiment was carried out combining three nitrogen rates (5, 75 and 150 mg N kg-1 soil applied as urea, and four silicon rates (0, 200, 400 and 600 mg SiO2 kg-1 soil applied as calcium silicate. Trial was set up in a completely randomized design 3 ´ 4 factorial scheme, (N = 5. Nitrogen fertilization increased the number of stems and panicles per square meter and the total number of spikelets, reflecting on grain productivity. Excessive tillering caused by inadequate nitrogen fertilization reduced the percentage of fertile stalks, spikelet fertility and grain mass. Silicon fertilization reduced the number of blank spikelets per panicles and increased grain mass, but did not affect grain productivity.O silício não é considerado um elemento essencial para o crescimento e desenvolvimento das plantas, entretanto, sua absorção traz inúmeros benefícios, principalmente ao arroz, como aumento da espessura da parede celular, conferindo resistência mecânica a penetração de fungos, melhora o ângulo de abertura das folhas tornando-as mais eretas, diminuindo o auto-sombreamento e aumentando a resistência ao acamamento, especialmente sob altas doses de nitrogênio. O presente trabalho teve por objetivo avaliar os efeitos da adubação nitrogenada e silicatada nos componentes vegetativos, nos componentes da produção, na altura da planta e na produtividade da cultivar de arroz IAC

  5. Corrosion of silicon nitride in high temperature alkaline solutions

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Liyan, E-mail: liyan.qiu@cnl.ca; Guzonas, Dave A.; Qian, Jing

    2016-08-01

    The corrosion of silicon nitride (Si{sub 3}N{sub 4}) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si{sub 3}N{sub 4} experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

  6. Silicon photomultiplier as a detector of Cherenkov photons

    International Nuclear Information System (INIS)

    Korpar, S.; Dolenec, R.; Hara, K.; Iijima, T.; Krizan, P.; Mazuka, Y.; Pestotnik, R.; Stanovnik, A.; Yamaoka, M.

    2008-01-01

    A novel photon detector-i.e. the silicon photomultiplier-whose main advantage over conventional photomultiplier tubes is the operation in high magnetic fields, has been tested as a photon detector in a proximity focusing RICH with aerogel radiator. This type of RICH counter is proposed for the upgrade of the Belle detector at the KEK B-factory. Recently produced silicon photomultipliers show less noise and have larger size, which are important issues for a large area photon detector. We measured the single photon pulse height distribution, the timing resolution and the position sensitivity for different silicon photomultipliers (Hamamatsu MPPC HC025, HC050, and HC100). The silicon photomultipliers were then used to detect Cherenkov photons emitted by cosmic ray particles in a proximity focusing aerogel RICH. Various light guides were investigated in order to increase the detection efficiency

  7. Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering

    Directory of Open Access Journals (Sweden)

    Brian Ford

    2017-04-01

    Full Text Available The following study focuses on the photoluminescence (PL enhancement of chemically synthesized silicon oxycarbide (SiCxOy thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposited via thermal chemical vapor deposition (TCVD, and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments were carried out using oxygen, nitrogen, and forming gas (FG, 5% H2, 95% N2 ambients, modifying the observed white light emission. The observed white luminescence was found to be inversely related to the carbonyl (C=O bond density present in the films. The peak-to-peak PL was enhanced ~18 and ~17 times for, respectively, the two SiCxOy matrices, oxygen-rich and carbon-rich SiCxOy, via post-deposition passivations. Through a combinational and systematic Fourier transform infrared spectroscopy (FTIR and PL study, it was revealed that proper tailoring of the passivations reduces the carbonyl bond density by a factor of ~2.2, corresponding to a PL enhancement of ~50 times. Furthermore, the temperature-dependent and temperature-dependent time resolved PL (TDPL and TD-TRPL behaviors of the nitrogen and forming gas passivated SiCxOy thin films were investigated to acquire further insight into the ramifications of the passivation on the carbonyl/dangling bond density and PL yield.

  8. Depth distribution of nitrogen in silicon from plasma ion implantation

    International Nuclear Information System (INIS)

    Vajo, J.J.; Williams, J.D.; Wei, R.; Wilson, R.G.; Matossian, J.N.

    1994-01-01

    Plasma Ion Implantation (PII) is an ion implantation technique that eliminates the line-of-sight restriction of conventional ion-beam implantation and therefore allows for cost effective surface modification of large-scale objects or large-number of small-scale objects. In PII, a part to be implanted is immersed in a low-pressure (10 -4 --10 -5 Torr), partially-ionized plasma that surrounds the part with a plasma sheath. The part is negatively pulse biased up to 100 keV using a repetitive train (100--1,000 Hz) of short-duration (10--40 μsec) voltage pulses. The applied voltage develops across the sheath and accelerates plasma ions into the surface, implanting them omnidirectionally and simultaneously over the entire surface of the part. The depth distribution of the implanted ions influences the extent and type of surface modification achieved and depends upon many factors. These include three rise and fall time of the voltage-pulse waveform, the voltage-pulse amplitude, the ion specie, the ion density, and the temperature of the target. Understanding the contributions to the depth distribution from each of these factors will enable prediction of conditions that will be useful for implantation of large complex parts. To investigate the contributions to the measured depth distributions from these factors nitrogen, predominantly as N + 2 , has been implanted into silicon using PII at 50 and 100 keV (25 and 50 keV per N atom). The implanted depth distributions have been determined using secondary ion mass spectroscopy and Auger electron spectroscopy depth profiling. The distributions differ from the typical, approximately Gaussian, profiles that result from conventional mass selected monoenergetic ion beam implantation. In comparison with ion beam implants and numerical simulations the profiles appear ''filled-in'' with an approximately constant nitrogen concentration for depths less than the expected average ion range

  9. Structural and Chemical Properties of the Nitrogen-Rich Energetic Material Triaminoguanidinium 1-methyl-5-nitriminotetrazolate under Pressure

    Science.gov (United States)

    2012-08-01

    ABSTRACT 16. SECURITY CLASSIFICATION OF: The structural and chemical properties of the bi-molecular, hydrogen-bonded, nitrogen-rich ener- getic...School Apprenticeship Program (ARO-HSAP), and the Depart- ment of Energy National Nuclear Security Administration (Carnegie/DOE Alliance Center; DE-FC52...B. J. Baer, H. Cynn, W. J. Evans, V. Iota , and C. S. Yoo, Phys. Rev. B 76(1), 014113 (2007). 9T. M. Klapötke, J. Stierstorfer, and A. U. Wallek, Chem

  10. Screening nitrogen-rich bases and oxygen-rich acids by theoretical calculations for forming highly stable salts.

    Science.gov (United States)

    Zhang, Xueli; Gong, Xuedong

    2014-08-04

    Nitrogen-rich heterocyclic bases and oxygen-rich acids react to produce energetic salts with potential application in the field of composite explosives and propellants. In this study, 12 salts formed by the reaction of the bases 4-amino-1,2,4-trizole (A), 1-amino-1,2,4-trizole (B), and 5-aminotetrazole (C), upon reaction with the acids HNO3 (I), HN(NO2 )2 (II), HClO4 (III), and HC(NO2 )3 (IV), are studied using DFT calculations at the B97-D/6-311++G** level of theory. For the reactions with the same base, those of HClO4 are the most exothermic and spontaneous, and the most negative Δr Gm in the formation reaction also corresponds to the highest decomposition temperature of the resulting salt. The ability of anions and cations to form hydrogen bonds decreases in the order NO3 (-) >N(NO2 )2 (-) >ClO4 (-) >C(NO2 )3 (-) , and C(+) >B(+) >A(+) . In particular, those different cation abilities are mainly due to their different conformations and charge distributions. For the salts with the same anion, the larger total hydrogen-bond energy (EH,tot ) leads to a higher melting point. The order of cations and anions on charge transfer (q), second-order perturbation energy (E2 ), and binding energy (Eb ) are the same to that of EH,tot , so larger q leads to larger E2 , Eb , and EH,tot . All salts have similar frontier orbitals distributions, and their HOMO and LUMO are derived from the anion and the cation, respectively. The molecular orbital shapes are kept as the ions form a salt. To produce energetic salts, 5-aminotetrazole and HClO4 are the preferred base and acid, respectively. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. First-principles studies of a photovoltaic material based on silicon heavily codoped with sulfur and nitrogen

    Science.gov (United States)

    Dong, Xiao; Wang, Yongyong; Song, Xiaohui; Yang, Feng

    2018-03-01

    In silicon co-hyperdoped with nitrogen and sulfur, dopant atoms tend to form dimers in the near-equilibrium process. The dimer that contains substitutional N and S atoms has the lowest formation energy and can form an impurity band that overlaps with the conduction band (CB). When separating the two atoms far apart from each other, the impurity band is clearly isolated from the CB and becomes an intermediate band (IB). The sub-band-gap absorption decreases with the decrease in the substitutional atom distance. The sub-band-gap absorption of the material is the combined effect of the configurations with different N-S distances.

  12. Explosive decomposition of a melamine-cyanuric acid supramolecular assembly for fabricating defect-rich nitrogen-doped carbon nanotubes with significantly promoted catalysis.

    Science.gov (United States)

    Zhao, Zhongkui; Dai, Yitao; Ge, Guifang; Wang, Guiru

    2015-05-26

    A facile and scalable approach for fabricating structural defect-rich nitrogen-doped carbon nanotubes (MCSA-CNTs) through explosive decomposition of melamine-cyanuric acid supramolecular assembly is presented. In comparison to pristine carbon nanotubes, MCSA-CNT exhibits significantly enhanced catalytic performance in oxidant- and steam-free direct dehydrogenation of ethylbenzene, demonstrating the potential for metal-free clean and energy-saving styrene production. This finding also opens a new horizon for preparing highly-efficient carbocatalysts rich in structural defect sites for diverse transformations. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    Science.gov (United States)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  14. Environmental effects on the tensile strength of chemically vapor deposited silicon carbide fibers

    Science.gov (United States)

    Bhatt, R. T.; Kraitchman, M. D.

    1985-01-01

    The room temperature and elevated temperature tensile strengths of commercially available chemically vapor-deposited (CVD) silicon carbide fibers were measured after 15 min heat treatment to 1600 C in various environments. These environments included oxygen, air, argon and nitrogen at one atmosphere and vacuum at 10/9 atmosphere. Two types of fibers were examined which differed in the SiC content of their carbon-rich coatings. Threshold temperature for fiber strength degradation was observed to be dependent on the as-received fiber-flaw structure, on the environment and on the coating. Fractographic analyses and flexural strength measurements indicate that tensile strength losses were caused by surface degradation. Oxidation of the surface coating is suggested as one possible degradation mechanism. The SiC fibers containing the higher percentage of SiC near the surface of the carbon-rich coating show better strength retention and higher elevated temperature strength.

  15. Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

    International Nuclear Information System (INIS)

    Skorupa, W.; Kreissig, U.; Hensel, E.; Bartsch, H.

    1984-01-01

    Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20-200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1-2 orders of magnitude. (author)

  16. Nitrogen-rich salts of 5,5‧-bistetrazole-1,1‧-diolate: Syntheses, structures and properties

    Science.gov (United States)

    Yang, Ting; Zhang, Jian-Guo; Zhang, Zhi-Bin; Gozin, Michael

    2018-03-01

    A series of new nitrogen-rich energetic salts containing 1H,1‧H-[5,5‧-bitetrazole]-1,1‧-diol (BTO) anion and ethane-1,2-diaminium (1), 1-amino-1H-1,2,3-triazol-3-ium (2), 4-amino-4H-1,2,4-triazol-1-ium (3) and 4,5-diamino-4H-1,2,4-triazol-1-ium (4) cations were synthesized by direct salt formation or by metathesis strategy. The structures of energetic salts 1-4 were comprehensively characterized by elemental analysis, mass spectrometry, IR and NMR spectroscopies and by X-ray crystallography. DSC and TGA methods were used to study thermal properties of these salts. Additionally, the non-isothermal kinetic parameters and thermodynamic parameters were calculated by utilizing the Kissinger's and Ozawa-Doyle's methods. The enthalpies of formation for all target compounds in this study were calculated, and their sensitivity to mechanical impact and friction was tested according to BAM guidelines. We found these new energetic salts exhibit good thermal stability and have typical decomposition temperatures above 230 °C, except for the salt 2. All our salts have highly-positive enthalpies of formation (311.1-473.6 kJ mol-1) and are insensitive to impact and friction stimuli (>40 J, 120 N). With a high nitrogen-rich content, high enthalpy of formation, good thermostability and very low sensitivity to impact, some of these new salts may have a potential for application in the field of environmentally friendly insensitive energetic materials.

  17. Effects of the duration and inorganic nitrogen composition of a nutrient-rich patch on soil exploration by the roots of Lolium perenne in a heterogeneous environment.

    Science.gov (United States)

    Nakamura, Ryoji; Kachi, N; Suzuki, J-I

    2010-05-01

    We investigated the growth of and soil exploration by Lolium perenne under a heterogeneous environment before its roots reached a nutrient-rich patch. Temporal changes in the distribution of inorganic nitrogen, i.e., NO(3)(-)-N and NH(4)(+)-N, in the heterogeneous environment during the experimental period were also examined. The results showed that roots randomly explored soil, irrespective of the patchy distribution of inorganic nitrogen and differences in the chemical composition of inorganic nitrogen distribution between heterogeneous and homogeneous environments. We have also elucidated the potential effects of patch duration and inorganic nitrogen distribution on soil exploration by roots and thus on plant growth.

  18. Nitrogen-rich higher-molecular soil organic compounds patterned by lignin degradation products: Considerations on the nature of soil organic nitrogen

    Science.gov (United States)

    Liebner, Falk; Bertoli, Luca; Pour, Georg; Klinger, Karl; Ragab, Tamer; Rosenau, Thomas

    2016-04-01

    and NMR spectroscopy (1H, 13C, 15N), respectively. The reactions of hydroquinone, methyl hydroquinone and p-benzoquinone with ammonia and dimethyl-ammonium dimethylcarbamate - a source of dimethyl amine - affording the respective (substituted) 2,5-diamino-[1,4]benzoquinones under aerobic conditions have been studied by EPR spectroscopy for both oxygen-free and oxygen-rich conditions. 15N CPMAS NMR and XPS spectra of ammoxidized technical lignins and of ammoxidized low-molecular polyphenolic and quinoid products of the aerobic, microbial lignin degradation using 15N labeled aqueous ammonium hydroxide share many similarities, highly indicative for reaction sequences proceeding via common key intermediates. It has been demonstrated that 2,5-dihydroxy-[1,4]benzoquinone which can be surprisingly formed from both lignin and cellulose reacts with N nucleophiles to the respective 2,5-amino derivatives. The latter are semi-stable and react further to nitrogenous compounds of higher molecular weight. Hydroquinone and methoxy hydroquinone react even faster affording the respective 2,5-diamino-[1,4]benzoquinones. EPR experiments revealed that the reaction of hydroquinone with dimethyl amine proceed via radical intermediates. The results of this study strongly support the polyphenol theory and is hoped to contribute to a better understanding of nitrogen accumulation in soil organic matter. Acknowledgement The financial support by the Austrian Research Promotion Agency FFG (project FLIPPR: Future Lignin and Pulp Processing Research, 836650) and by The Austrian Science Fund FWF (project I154-N19) is gratefully acknowledged.

  19. Biome-scale nitrogen fixation strategies selected by climatic constraints on nitrogen cycle.

    Science.gov (United States)

    Sheffer, Efrat; Batterman, Sarah A; Levin, Simon A; Hedin, Lars O

    2015-11-23

    Dinitrogen fixation by plants (in symbiosis with root bacteria) is a major source of new nitrogen for land ecosystems(1). A long-standing puzzle(2) is that trees capable of nitrogen fixation are abundant in nitrogen-rich tropical forests, but absent or restricted to early successional stages in nitrogen-poor extra-tropical forests. This biome-scale pattern presents an evolutionary paradox(3), given that the physiological cost(4) of nitrogen fixation predicts the opposite pattern: fixers should be out-competed by non-fixers in nitrogen-rich conditions, but competitively superior in nitrogen-poor soils. Here we evaluate whether this paradox can be explained by the existence of different fixation strategies in tropical versus extra-tropical trees: facultative fixers (capable of downregulating fixation(5,6) by sanctioning mutualistic bacteria(7)) are common in the tropics, whereas obligate fixers (less able to downregulate fixation) dominate at higher latitudes. Using a game-theoretic approach, we assess the ecological and evolutionary conditions under which these fixation strategies emerge, and examine their dependence on climate-driven differences in the nitrogen cycle. We show that in the tropics, transient soil nitrogen deficits following disturbance and rapid tree growth favour a facultative strategy and the coexistence of fixers and non-fixers. In contrast, sustained nitrogen deficits following disturbance in extra-tropical forests favour an obligate fixation strategy, and cause fixers to be excluded in late successional stages. We conclude that biome-scale differences in the abundance of nitrogen fixers can be explained by the interaction between individual plant strategies and climatic constraints on the nitrogen cycle over evolutionary time.

  20. Mesoporous nitrogen-rich carbon materials as cathode catalysts in microbial fuel cells

    KAUST Repository

    Ahn, Yongtae

    2014-12-01

    The high cost of the catalyst material used for the oxygen reduction reaction in microbial fuel cell (MFC) cathodes is one of the factors limiting practical applications of this technology. Mesoporous nitrogen-rich carbon (MNC), prepared at different temperatures, was examined as an oxygen reduction catalyst, and compared in performance to Pt in MFCs and electrochemical cells. MNC calcined at 800 °C produced a maximum power density of 979 ± 131 mW m-2 in MFCs, which was 37% higher than that produced using MNC calined at 600 °C (715 ± 152 mW m-2), and only 14% lower than that obtained with Pt (1143 ± 54 mW m-2). The extent of COD removal and coulombic efficiencies were the same for all cathode materials. These results show that MNC could be used as an alternative to Pt in MFCs. © 2014 Elsevier B.V. All rights reserved.

  1. Growth, Carbon Isotope Discrimination and Nitrogen Uptake in Silicon and/or Potassium Fed barley Grown under Two Watering Regimes

    OpenAIRE

    Kurdali, Fawaz; Al-Chammaa, Mohammad

    2013-01-01

    The present pot experiment was an attempt to monitor the beneficial effects of silicon (Si) and/or potassium (K) applications on growth and nitrogen uptake in barley plants grown under water (FC1) and non water (FC2) stress conditions using 15N and 13C isotopes. Three fertilizer rates of Si (Si 50, Si 100 and Si 200) and one fertilizer rate of K were used. Dry matter (DM) and N yield (NY) in different plant parts of barley plants was affected by Si and/ or K fertilization as well as by the wa...

  2. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  3. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  4. Diamond deposition on siliconized stainless steel

    International Nuclear Information System (INIS)

    Alvarez, F.; Reinoso, M.; Huck, H.; Rosenbusch, M.

    2010-01-01

    Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp 2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

  5. Bonding silicon nitride using glass-ceramic

    International Nuclear Information System (INIS)

    Dobedoe, R.S.

    1995-01-01

    Silicon nitride has been successfully bonded to itself using magnesium-aluminosilicate glass and glass-ceramic. For some samples, bonding was achieved using a diffusion bonder, but in other instances, following an initial degassing hold, higher temperatures were used in a nitrogen atmosphere with no applied load. For diffusion bonding, a small applied pressure at a temperature below which crystallisation occurs resulted in intimate contact. At slightly higher temperatures, the extent of the reaction at the interface and the microstructure of the glass-ceramic joint was highly sensitive to the bonding temperature. Bonding in a nitrogen atmosphere resulted in a solution-reprecipitation reaction. A thin layer of glass produced a ''dry'', glass-free joint, whilst a thicker layer resulted in a continuous glassy join across the interface. The chromium silicide impurities within the silicon nitride react with the nucleating agent in the glass ceramic, which may lead to difficulty in producing a fine glass-ceramic microstructure. Slightly lower temperatures in nitrogen resulted in a polycrystalline join but the interfacial contact was poor. It is hoped that one of the bonds produced may be developed to eventually form part of a graded joint between silicon nitride and a high temperature nickel alloy. (orig.)

  6. A New Understanding of Near-Threshold Damage for 200 keV Irradiation In Silicon

    International Nuclear Information System (INIS)

    Stoddard, Nathan; Duscher, Gerd J.M.; Windl, Wolfgang; Rozgonyi, G.A.

    2005-01-01

    Recently we reported room temperature point defect creation and subsequent extended defect nucleation in nitrogen-doped silicon during 200 kV electron irradiation, while identical irradiation of nitrogen-free silicon produced no effect. In this paper, first principles calculations are combined with new transmission electron microscope (TEM) observations to support a new model for elastic electron-silicon interactions in the TEM, which encompasses both nitrogen doped and nitrogen free silicon. Specifically, the nudged elastic band method was used to study the energetics along the diffusion path during an electron collision event in the vicinity of a nitrogen pair. It was found that the 0 K estimate for the energy barrier of a knock-on event is lowered from ∼12 to 6.2 eV. However, this is still inadequate to explain the observations. We therefore propose an increase in the energy barrier for Frenkel pair recombination associated with N 2 -V bonding. Concerning pure silicon, stacking fault formation near irradiation-induced holes demonstrates the participation of bulk processes. In low oxygen float zone material, 2--5 nm voids were formed, while oxygen precipitation in Czochralski Si has been verified by electron energy-loss spectroscopy. Models of irradiation-induced point defect aggregation are presented and it is concluded that these must be bulk and not surface mediated phenomena.

  7. Thermogravimetric analysis of silicon carbide-silicon nitride polycarbosilazane precursor during pyrolysis from ambient to 1000 C

    Science.gov (United States)

    Ledbetter, F. E., III; Daniels, J. G.; Clemons, J. M.; Hundley, N. H.; Penn, B. G.

    1984-01-01

    Thermogravimetric analysis data are presented on the unmeltable polycarbosilazane precursor of silicon carbide-silicon nitride fibers, over the room temperature-1000 C range in a nitrogen atmosphere, in order to establish the weight loss at various temperatures during the precursor's pyrolysis to the fiber material. The fibers obtained by this method are excellent candidates for use in applications where the oxidation of carbon fibers (above 400 C) renders them unsuitable.

  8. Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

    International Nuclear Information System (INIS)

    Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

    1985-01-01

    Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

  9. DEPOSITION AND PROPERTY CHARACTERISATION OF TaN COATINGS DEPOSITED WITH DIFFERENT NITROGEN CONTENTS

    Directory of Open Access Journals (Sweden)

    Gilberto Bejarano Gaitán

    Full Text Available This study focused on the study of the influence of nitrogen content on the microstructure, chemical composition, mechanical and tribological properties of TaN coatings deposited on 420 stainless steel and silicon samples (100 using the magnetron sputtering technique. For the deposition of the TaN coatings an argon/nitrogen atmosphere was used, varying the nitrogen flux between 12% and 25%. For the coating characterization, scanning electron microscopy, energydispersive X-ray spectroscopy, atomic force microscopy, X-ray diffraction (XRD, micro-Raman spectroscopy, a microhardness tester, and a ball on disc tribometer were used. A refining of the columnar structure of the coatings, accompanied by a decrease in their thickness with the increased nitrogen content was observed. Initially, fcc-TaN (111 cubic phase growth was observed; this phase was changed to the fcc-TaN (200 above N2 12%. For contents greater than N2 18%, another nitrogen-rich phase was formed and the system tended towards amorphicity, particularly for a coating with N2 25% content. The TaN-1sample deposited with N2 12% in the gas mixture presented the highest micro-hardness value with 21.3GPa and the lowest friction coefficient and wear rate with 0.02 and 1.82x10-7 (mm³/Nm, respectively. From the obtained results, an important relationship between the microstructural, mechanical and tribological properties of the coated samples and their nitrogen content was observed.

  10. Silicon (100)/SiO2 by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-25

    Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

  11. High pressure study of a highly energetic nitrogen-rich carbon nitride, cyanuric triazide

    Energy Technology Data Exchange (ETDEWEB)

    Laniel, Dominique; Desgreniers, Serge [Laboratoire de physique des solides denses, University of Ottawa, Ottawa, Ontario K1N 6N5 (Canada); Downie, Laura E. [Department of Physics and Atmospheric Science, Dalhousie University, Halifax, Nova Scotia B3H 4R2 (Canada); Smith, Jesse S. [High Pressure Collaborative Access Team, Carnegie Institution of Washington, Argonne, Illinois 60439 (United States); Savard, Didier; Murugesu, Muralee [Department of Chemistry, University of Ottawa, Ottawa, Ontario K1N 6N5 (Canada)

    2014-12-21

    Cyanuric triazide (CTA), a nitrogen-rich energetic material, was compressed in a diamond anvil cell up to 63.2 GPa. Samples were characterized by x-ray diffraction, Raman, and infrared spectroscopy. A phase transition occurring between 29.8 and 30.7 GPa was found by all three techniques. The bulk modulus and its pressure derivative of the low pressure phase were determined by fitting the 300 K isothermal compression data to the Birch-Murnaghan equation of state. Due to the strong photosensitivity of CTA, synchrotron generated x-rays and visible laser radiation both lead to the progressive conversion of CTA into a two dimensional amorphous C=N network, starting from 9.2 GPa. As a result of the conversion, increasingly weak and broad x-ray diffraction lines were recorded from crystalline CTA as a function of pressure. Hence, a definite structure could not be obtained for the high pressure phase of CTA. Results from infrared spectroscopy carried out to 40.5 GPa suggest the high pressure formation of a lattice built of tri-tetrazole molecular units. The decompression study showed stability of the high pressure phase down to 13.9 GPa. Finally, two CTA samples, one loaded with neon and the other with nitrogen, used as pressure transmitting media, were laser-heated to approximately 1100 K and 1500 K while compressed at 37.7 GPa and 42.0 GPa, respectively. In both cases CTA decomposed resulting in amorphous compounds, as recovered at ambient conditions.

  12. Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon

    Science.gov (United States)

    Skarlatos, D.; Tsamis, C.; Perego, M.; Fanciulli, M.

    2005-06-01

    In this article we study the interstitial injection during oxidation of very low-energy nitrogen-implanted silicon. Buried boron δ layers are used to monitor the interstitial supersaturation during the oxidation of nitrogen-implanted silicon. No difference in boron diffusivity enhancement was observed compared to dry oxidation of nonimplanted samples. This result is different from our experience from N2O oxynitridation study, during which a boron diffusivity enhancement of the order of 20% was observed, revealing the influence of interfacial nitrogen on interstitial kinetics. A possible explanation may be that implanted nitrogen acts as an excess interstitial sink in order to diffuse towards the surface via a non-Fickian mechanism. This work completes a wide study of oxidation of very low-energy nitrogen-implanted silicon related phenomena we performed within the last two years [D. Skarlatos, C. Tsamis, and D. Tsoukalas, J. Appl. Phys. 93, 1832 (2003); D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, M. Perego, S. Ferrari, M. Fanciulli, and D. Tsoukalas, J. Appl. Phys. 96, 300 (2004)].

  13. Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation

    Science.gov (United States)

    Inoue, Naohisa; Kawamura, Yuichi

    2018-05-01

    The interaction of nitrogen and intrinsic point defects, vacancy (V) and self-interstitial (I), was examined by infrared absorption spectroscopy on the electron irradiated and post-annealed nitrogen doped float zone (FZ) silicon crystal. Various absorption lines were observed, at 551 cm-1 in as-grown samples, at 726 and 778 cm-1 in as-irradiated samples (Ir group), at 689 cm-1 after post-annealing at 400 °C and above (400 °C group), at 762 and 951 cm-1 after annealing at 600 °C (600 °C group), and at 714 cm-1 up to 800 °C (800 °C group). By irradiation, a part of N2 was changed into the Ir group. VN2 is the candidate for the origin of the Ir group. By the post annealing at 400 and 600 °C, a part of N2 and the Ir group were changed into the 400 °C group, to less extent at 600 °C. V2N2 is the candidate for the origin of the 400 °C group. By annealing at 600 °C, most of the Ir group turned into 400 °C and 600 °C groups. By annealing at 800 °C, N2 recovered almost completely, and most other complexes were not observed. Recently, lifetime degradation has been observed in the nitrogen doped FZ Si annealed at between 450 and 800 °C. The N-V interaction in the same temperature range revealed here will help to understand the lifetime degradation mechanism. The behavior of the 689 cm-1 line corresponded well to the lifetime degradation.

  14. One-step synthesis of 3D sulfur/nitrogen dual-doped graphene supported nano silicon as anode for Li-ion batteries

    Science.gov (United States)

    Li, Ruihong; Li, Junli; Qi, Kaiyu; Ge, Xin; Zhang, Qiwei; Zhang, Bangwen

    2018-03-01

    Silicon is one of the most promising candidates for next-generation anode of Lithium-ion batteries. However, poor electrical conductivity and large volume change during alloying/dealloying hinder its practical use. Here we reported a three-dimensional (3D) nitrogen and sulfur codoped graphene supported silicon nanoparticles composite (SN-G/Si) through one-step hydrothermal self-assembly. The obtained SN-G/Si was investigated in term of instrumental characterizations and electrochemical properties. The results show that SN-G/Si as a freestanding anode in LIBs delivers a reversible capacity of 2020 mAh g-1 after 100 cycles with coulombic efficiency of nearly 97%. The excellent electrochemical performance is associated with the unique structure and the synergistic effect of SN-G/Si, in which SN-G provides volume buffer for nano Si as the flexible loader, short paths/fast channels for electron/Li ion transport as porous skeleton, and low charge-transfer resistance.

  15. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Korolev, D. S.; Mikhaylov, A. N.; Belov, A. I.; Vasiliev, V. K.; Guseinov, D. V.; Okulich, E. V. [Nizhny Novgorod State University (Russian Federation); Shemukhin, A. A. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation); Surodin, S. I.; Nikolitchev, D. E.; Nezhdanov, A. V.; Pirogov, A. V.; Pavlov, D. A.; Tetelbaum, D. I., E-mail: tetelbaum@phys.unn.ru [Nizhny Novgorod State University (Russian Federation)

    2016-02-15

    The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.

  16. Species richness and soil properties in Pinus ponderosa forests: A structural equation modeling analysis

    Science.gov (United States)

    Laughlin, D.C.; Abella, S.R.; Covington, W.W.; Grace, J.B.

    2007-01-01

    Question: How are the effects of mineral soil properties on understory plant species richness propagated through a network of processes involving the forest overstory, soil organic matter, soil nitrogen, and understory plant abundance? Location: North-central Arizona, USA. Methods: We sampled 75 0.05-ha plots across a broad soil gradient in a Pinus ponderosa (ponderosa pine) forest ecosystem. We evaluated multivariate models of plant species richness using structural equation modeling. Results: Richness was highest at intermediate levels of understory plant cover, suggesting that both colonization success and competitive exclusion can limit richness in this system. We did not detect a reciprocal positive effect of richness on plant cover. Richness was strongly related to soil nitrogen in the model, with evidence for both a direct negative effect and an indirect non-linear relationship mediated through understory plant cover. Soil organic matter appeared to have a positive influence on understory richness that was independent of soil nitrogen. Richness was lowest where the forest overstory was densest, which can be explained through indirect effects on soil organic matter, soil nitrogen and understory cover. Finally, model results suggest a variety of direct and indirect processes whereby mineral soil properties can influence richness. Conclusions: Understory plant species richness and plant cover in P. ponderosa forests appear to be significantly influenced by soil organic matter and nitrogen, which are, in turn, related to overstory density and composition and mineral soil properties. Thus, soil properties can impose direct and indirect constraints on local species diversity in ponderosa pine forests. ?? IAVS; Opulus Press.

  17. Nanopores creation in boron and nitrogen doped polycrystalline graphene: A molecular dynamics study

    Science.gov (United States)

    Izadifar, Mohammadreza; Abadi, Rouzbeh; Nezhad Shirazi, Ali Hossein; Alajlan, Naif; Rabczuk, Timon

    2018-05-01

    In the present paper, molecular dynamic simulations have been conducted to investigate the nanopores creation on 10% of boron and nitrogen doped polycrystalline graphene by silicon and diamond nanoclusters. Two types of nanoclusters based on silicon and diamond are used to investigate their effect for the fabrication of nanopores. Therefore, three different diameter sizes of the clusters with five kinetic energies of 10, 50, 100, 300 and 500 eV/atom at four different locations in boron or nitrogen doped polycrystalline graphene nanosheets have been perused. We also study the effect of 3% and 6% of boron doped polycrystalline graphene with the best outcome from 10% of doping. Our results reveal that the diamond cluster with diameter of 2 and 2.5 nm fabricates the largest nanopore areas on boron and nitrogen doped polycrystalline graphene, respectively. Furthermore, the kinetic energies of 10 and 50 eV/atom can not fabricate nanopores in some cases for silicon and diamond clusters on boron doped polycrystalline graphene nanosheets. On the other hand, silicon and diamond clusters fabricate nanopores for all locations and all tested energies on nitrogen doped polycrystalline graphene. The area sizes of nanopores fabricated by silicon and diamond clusters with diameter of 2 and 2.5 nm are close to the actual area size of the related clusters for the kinetic energy of 300 eV/atom in all locations on boron doped polycrystalline graphene. The maximum area and the average maximum area of nanopores are fabricated by the kinetic energy of 500 eV/atom inside the grain boundary at the center of the nanosheet and in the corner of nanosheet with diameters of 2 and 3 nm for silicon and diamond clusters on boron and nitrogen doped polycrystalline graphene.

  18. Species-rich grassland can persist under nitrogen-rich but phosphorus-limited conditions

    NARCIS (Netherlands)

    Dobben, van Han F.; Wamelink, Wieger; Slim, Pieter A.; Kamiński, Jan; Piórkowski, Hubert

    2017-01-01

    Aim: Deposition of nitrogen is assumed to cause loss of botanical diversity, probably through increased production and exclusion of less competitive species. However, if production is (co-)limited by phosphorus, acceleration of the phosphorus cycle may be responsible for the diversity loss and,

  19. Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

    International Nuclear Information System (INIS)

    Wilking, S.; Ebert, S.; Herguth, A.; Hahn, G.

    2013-01-01

    The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems to be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects

  20. Synthesis of Novel Reactive Disperse Silicon-Containing Dyes and Their Coloring Properties on Silicone Rubbers

    Directory of Open Access Journals (Sweden)

    Ning Yu

    2018-01-01

    Full Text Available Novel red and purple reactive disperse silicon-containing dyes were designed and synthesized using p-nitroaniline and 6-bromo-2,4-dinitro-aniline as diazonium components, the first condensation product of cyanuric chloride and 3-(N,N-diethylamino-aniline as coupling component, and 3-aminopropylmethoxydimethylsilane, 3-aminopropylmethyldimethoxysilane, and 3-aminopropyltrimethoxysilane as silicone reactive agents. These dyes were characterized by UV-Vis, 1H-NMR, FT-IR, and MS. The obtained reactive disperse silicon-containing dyes were used to color silicone rubbers and the color fastness of the dyes were evaluated. The dry/wet rubbing and washing fastnesses of these dyes all reached 4–5 grade and the sublimation fastness was also above 4 grade, indicating outstanding performance in terms of color fastness. Such colored silicone rubbers showed bright and rich colors without affecting its static mechanical properties.

  1. The impact of nitrogen deposition on acid grasslands in the Atlantic region of Europe

    Energy Technology Data Exchange (ETDEWEB)

    Stevens, Carly J., E-mail: c.j.stevens@open.ac.uk [Department of Life Sciences, The Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Lancaster Environment Centre, Lancaster University, Lancaster LA1 4YQ (United Kingdom); Dupre, Cecilia [Institute of Ecology, FB 2, University of Bremen, Leobener Str., DE-28359 Bremen (Germany); Dorland, Edu [Ecology and Biodiversity Group, Department of Biology, Institute of Environmental Biology, Utrecht University, PO Box 80.058, 3508 TB Utrecht (Netherlands); Gaudnik, Cassandre [University of Bordeaux 1, UMR INRA 1202 Biodiversity, Genes and Communities, Equipe Ecologie des Communautes, Batiment B8 - Avenue des Facultes, F-33405 Talence (France); Gowing, David J.G. [Department of Life Sciences, The Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Bleeker, Albert [Department of Air Quality and Climate Change, Energy Research Centre of the Netherlands, PO Box 1, 1755 ZG Petten (Netherlands); Diekmann, Martin [Institute of Ecology, FB 2, University of Bremen, Leobener Str., DE-28359 Bremen (Germany); Alard, Didier [University of Bordeaux 1, UMR INRA 1202 Biodiversity, Genes and Communities, Equipe Ecologie des Communautes, Batiment B8 - Avenue des Facultes, F-33405 Talence (France); Bobbink, Roland [B-WARE Research Centre, Radboud University, PO Box 9010, 6525 ED Nijmegen (Netherlands); Fowler, David [NERC Centre for Ecology and Hydrology, Bush Estate, Penicuik, Midlothian EH26 0QB (United Kingdom); Corcket, Emmanuel [University of Bordeaux 1, UMR INRA 1202 Biodiversity, Genes and Communities, Equipe Ecologie des Communautes, Batiment B8 - Avenue des Facultes, F-33405 Talence (France); Mountford, J. Owen [NERC Centre for Ecology and Hydrology, MacLean Building, Benson Lane, Crowmarsh Gifford, Wallingford, Oxfordshire OX10 8BB (United Kingdom); Vandvik, Vigdis [Department of Biology, University of Bergen, Box 7800, N-5020 Bergen (Norway)

    2011-10-15

    A survey of 153 acid grasslands from the Atlantic biogeographic region of Europe indicates that chronic nitrogen deposition is changing plant species composition and soil and plant-tissue chemistry. Across the deposition gradient (2-44 kg N ha{sup -1} yr{sup -1}) grass richness as a proportion of total species richness increased whereas forb richness decreased. Soil C:N ratio increased, but soil extractable nitrate and ammonium concentrations did not show any relationship with nitrogen deposition. The above-ground tissue nitrogen contents of three plant species were examined: Agrostis capillaris (grass), Galium saxatile (forb) and Rhytidiadelphus squarrosus (bryophyte). The tissue nitrogen content of neither vascular plant species showed any relationship with nitrogen deposition, but there was a weak positive relationship between R. squarrosus nitrogen content and nitrogen deposition. None of the species showed strong relationships between above-ground tissue N:P or C:N and nitrogen deposition, indicating that they are not good indicators of deposition rate. - Highlights: > N deposition is negatively correlated with forb richness as a proportion of species richness. > Soil C:N ratio increased with increasing N deposition. > Soil extractable nitrate and ammonium were not related to nitrogen deposition. > Plant-tissue N content was not a good indicator of N deposition. - Atmospheric nitrogen deposition affects soils, plant-tissue chemistry and plant species composition in acid grasslands in the Atlantic biogeographic region of Europe.

  2. The impact of nitrogen deposition on acid grasslands in the Atlantic region of Europe

    International Nuclear Information System (INIS)

    Stevens, Carly J.; Dupre, Cecilia; Dorland, Edu; Gaudnik, Cassandre; Gowing, David J.G.; Bleeker, Albert; Diekmann, Martin; Alard, Didier; Bobbink, Roland; Fowler, David; Corcket, Emmanuel; Mountford, J. Owen; Vandvik, Vigdis

    2011-01-01

    A survey of 153 acid grasslands from the Atlantic biogeographic region of Europe indicates that chronic nitrogen deposition is changing plant species composition and soil and plant-tissue chemistry. Across the deposition gradient (2-44 kg N ha -1 yr -1 ) grass richness as a proportion of total species richness increased whereas forb richness decreased. Soil C:N ratio increased, but soil extractable nitrate and ammonium concentrations did not show any relationship with nitrogen deposition. The above-ground tissue nitrogen contents of three plant species were examined: Agrostis capillaris (grass), Galium saxatile (forb) and Rhytidiadelphus squarrosus (bryophyte). The tissue nitrogen content of neither vascular plant species showed any relationship with nitrogen deposition, but there was a weak positive relationship between R. squarrosus nitrogen content and nitrogen deposition. None of the species showed strong relationships between above-ground tissue N:P or C:N and nitrogen deposition, indicating that they are not good indicators of deposition rate. - Highlights: → N deposition is negatively correlated with forb richness as a proportion of species richness. → Soil C:N ratio increased with increasing N deposition. → Soil extractable nitrate and ammonium were not related to nitrogen deposition. → Plant-tissue N content was not a good indicator of N deposition. - Atmospheric nitrogen deposition affects soils, plant-tissue chemistry and plant species composition in acid grasslands in the Atlantic biogeographic region of Europe.

  3. Step-flow anisotropy of the m-plane GaN (1100) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Sawicka, Marta; Siekacz, Marcin; Skierbiszewski, Czeslaw; Turski, Henryk; Krysko, Marcin; DziePcielewski, Igor; Grzegory, Izabella; Smalc-Koziorowska, Julita

    2011-01-01

    The homoepitaxial growth of m-plane (1100) GaN was investigated by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. The surface morphologies as a function of sample miscut were studied, providing evidence for a strong growth anisotropy that is a consequence of the anisotropy of Ga adatom diffusion barriers on the m-plane surface recently calculated ab initio[Lymperakis and Neugebauer, Phys. Rev. B 79, 241308(R) (2009)]. We found that substrate miscut toward [0001] implies a step flow toward while substrate miscut toward [0001] causes formation of atomic steps either perpendicular or parallel to the [0001] direction, under N-rich conditions at 730 deg C. We describe the growth conditions for achieving atomically flat m-plane GaN layers with parallel atomic steps.

  4. Fabrication of functional structures on thin silicon nitride membranes

    NARCIS (Netherlands)

    Ekkels, P.; Tjerkstra, R.W.; Krijnen, Gijsbertus J.M.; Berenschot, Johan W.; Brugger, J.P.; Elwenspoek, Michael Curt

    A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of

  5. Double stabilization of nanocrystalline silicon: a bonus from solvent

    Energy Technology Data Exchange (ETDEWEB)

    Kolyagin, Y. G.; Zakharov, V. N.; Yatsenko, A. V.; Paseshnichenko, K. A.; Savilov, S. V.; Aslanov, L. A., E-mail: aslanov.38@mail.ru [Lomonosov Moscow State University (Russian Federation)

    2016-01-15

    Double stabilization of the silicon nanocrystals was observed for the first time by {sup 29}Si and {sup 13}C MAS NMR spectroscopy. The role of solvent, 1,2-dimethoxyethane (glyme), in formation and stabilization of silicon nanocrystals as well as mechanism of modification of the surface of silicon nanocrystals by nitrogen-heterocyclic carbene (NHC) was studied in this research. It was shown that silicon nanocrystals were stabilized by the products of cleavage of the C–O bonds in ethers and similar compounds. The fact of stabilization of silicon nanoparticles with NHC ligands in glyme was experimentally detected. It was demonstrated that MAS NMR spectroscopy is rather informative for study of the surface of silicon nanoparticles but it needs very pure samples.

  6. Long-term nitrogen addition leads to loss of species richness due to litter accumulation and soil acidification in a temperate steppe.

    Science.gov (United States)

    Fang, Ying; Xun, Fen; Bai, Wenming; Zhang, Wenhao; Li, Linghao

    2012-01-01

    Although community structure and species richness are known to respond to nitrogen fertilization dramatically, little is known about the mechanisms underlying specific species replacement and richness loss. In an experiment in semiarid temperate steppe of China, manipulative N addition with five treatments was conducted to evaluate the effect of N addition on the community structure and species richness. Species richness and biomass of community in each plot were investigated in a randomly selected quadrat. Root element, available and total phosphorus (AP, TP) in rhizospheric soil, and soil moisture, pH, AP, TP and inorganic N in the soil were measured. The relationship between species richness and the measured factors was analyzed using bivariate correlations and stepwise multiple linear regressions. The two dominant species, a shrub Artemisia frigida and a grass Stipa krylovii, responded differently to N addition such that the former was gradually replaced by the latter. S. krylovii and A. frigida had highly-branched fibrous and un-branched tap root systems, respectively. S. krylovii had higher height than A. frigida in both control and N added plots. These differences may contribute to the observed species replacement. In addition, the analysis on root element and AP contents in rhizospheric soil suggests that different calcium acquisition strategies, and phosphorus and sodium responses of the two species may account for the replacement. Species richness was significantly reduced along the five N addition levels. Our results revealed a significant relationship between species richness and soil pH, litter amount, soil moisture, AP concentration and inorganic N concentration. Our results indicate that litter accumulation and soil acidification accounted for 52.3% and 43.3% of the variation in species richness, respectively. These findings would advance our knowledge on the changes in species richness in semiarid temperate steppe of northern China under N

  7. Nitrogen Control in VIM Melts

    Science.gov (United States)

    Jablonski, P. D.; Hawk, J. A.

    NETL has developed a design and control philosophy for the addition of nitrogen to austenitic and ferritic steels. The design approach uses CALPHAD as the centerpiece to predict the level to which nitrogen is soluble in both the melt and the solid. Applications of this technique have revealed regions of "exclusion" in which the alloy, while within specification limits of prescribed, cannot be made by conventional melt processing. Furthermore, other investigations have found that substantial retrograde solubility of nitrogen exists, which can become problematic during subsequent melt processing and/or other finishing operations such as welding. Additionally, the CALPHAD method has been used to adjust primary melt conditions. To that end, nitrogen additions have been made using chrome nitride, silicon nitride, high-nitrogen ferrochrome as well as nitrogen gas. The advantages and disadvantages of each approach will be discussed and NETL experience in this area will be summarized with respect to steel structure.

  8. Studies of the composition, tribology and wetting behavior of silicon nitride films formed by pulsed reactive closed-field unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Yao, Zh.Q.; Yang, P.; Huang, N.; Wang, J.; Wen, F.; Leng, Y.X.

    2006-01-01

    Silicon nitride films were formed by pulsed reactive closed-field unbalanced magnetron sputtering of high purity Si targets in an Ar-N 2 mixture. The effects of N 2 fraction on the chemical composition, and tribological and wetting behaviors were investigated. The films deposited at a high N 2 fraction were consistently N-rich. The surface microstructure changed from continuous granular surrounded by tiny void regions to a homogeneous and dense microstructure, and densitied as the N 2 fraction is increased. The as-deposited films have a relatively low friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction and experienced only abrasive wear. The decreased surface roughness and increased nitrogen incorporation in the film give rise to increased contact angle with double-stilled water from 24 deg. to 49.6 deg. To some extent, the silicon nitride films deposited are hydrophilic in nature

  9. The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

    International Nuclear Information System (INIS)

    Colder, H.; Marie, P.; Gourbilleau, F.

    2008-01-01

    Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

  10. Loss of the nodule-specific cysteine rich peptide, NCR169, abolishes symbiotic nitrogen fixation in the Medicago truncatula dnf7 mutant.

    Science.gov (United States)

    Horváth, Beatrix; Domonkos, Ágota; Kereszt, Attila; Szűcs, Attila; Ábrahám, Edit; Ayaydin, Ferhan; Bóka, Károly; Chen, Yuhui; Chen, Rujin; Murray, Jeremy D; Udvardi, Michael K; Kondorosi, Éva; Kaló, Péter

    2015-12-08

    Host compatible rhizobia induce the formation of legume root nodules, symbiotic organs within which intracellular bacteria are present in plant-derived membrane compartments termed symbiosomes. In Medicago truncatula nodules, the Sinorhizobium microsymbionts undergo an irreversible differentiation process leading to the development of elongated polyploid noncultivable nitrogen fixing bacteroids that convert atmospheric dinitrogen into ammonia. This terminal differentiation is directed by the host plant and involves hundreds of nodule specific cysteine-rich peptides (NCRs). Except for certain in vitro activities of cationic peptides, the functional roles of individual NCR peptides in planta are not known. In this study, we demonstrate that the inability of M. truncatula dnf7 mutants to fix nitrogen is due to inactivation of a single NCR peptide, NCR169. In the absence of NCR169, bacterial differentiation was impaired and was associated with early senescence of the symbiotic cells. Introduction of the NCR169 gene into the dnf7-2/NCR169 deletion mutant restored symbiotic nitrogen fixation. Replacement of any of the cysteine residues in the NCR169 peptide with serine rendered it incapable of complementation, demonstrating an absolute requirement for all cysteines in planta. NCR169 was induced in the cell layers in which bacteroid elongation was most pronounced, and high expression persisted throughout the nitrogen-fixing nodule zone. Our results provide evidence for an essential role of NCR169 in the differentiation and persistence of nitrogen fixing bacteroids in M. truncatula.

  11. Nitrogen-Rich Polyacrylonitrile-Based Graphitic Carbons for Hydrogen Peroxide Sensing

    Directory of Open Access Journals (Sweden)

    Brandon Pollack

    2017-10-01

    Full Text Available Catalytic substrate, which is devoid of expensive noble metals and enzymes for hydrogen peroxide (H2O2, reduction reactions can be obtained via nitrogen doping of graphite. Here, we report a facile fabrication method for obtaining such nitrogen doped graphitized carbon using polyacrylonitrile (PAN mats and its use in H2O2 sensing. A high degree of graphitization was obtained with a mechanical treatment of the PAN fibers embedded with carbon nanotubes (CNT prior to the pyrolysis step. The electrochemical testing showed a limit of detection (LOD 0.609 µM and sensitivity of 2.54 µA cm−2 mM−1. The promising sensing performance of the developed carbon electrodes can be attributed to the presence of high content of pyridinic and graphitic nitrogens in the pyrolytic carbons, as confirmed by X-ray photoelectron spectroscopy. The reported results suggest that, despite their simple fabrication, the hydrogen peroxide sensors developed from pyrolytic carbon nanofibers are comparable with their sophisticated nitrogen-doped graphene counterparts.

  12. Improvement in switching characteristics and long-term stability of Zn-O-N thin-film transistors by silicon doping

    Directory of Open Access Journals (Sweden)

    Hiroshi Tsuji

    2017-06-01

    Full Text Available The effects of silicon doping on the properties of Zn-O-N (ZnON films and on the device characteristics of ZnON thin-film transistors (TFTs were investigated by co-sputtering silicon and zinc targets. Silicon doping was effective at decreasing the carrier concentration in ZnON films; therefore, the conductivity of the films can be controlled by the addition of a small amount of silicon. Doped silicon atoms also form bonds with nitrogen atoms, which suppresses nitrogen desorption from the films. Furthermore, Si-doped ZnON-TFTs are demonstrated to exhibit less negative threshold voltages, smaller subthreshold swings, and better long-term stability than non-doped ZnON-TFTs.

  13. Development of a quantitative multi-compound method for the detection of 14 nitrogen-rich adulterants by LC-MS/MS in food materials.

    Science.gov (United States)

    Frank, Nancy; Bessaire, Thomas; Tarres, Adrienne; Goyon, Alexandre; Delatour, Thierry

    2017-11-01

    The increasing number of food frauds using exogenous nitrogen-rich adulterants to artificially raise the protein content for economically motivated adulteration has demonstrated the need for a robust analytical methodology. This method should be applicable for quality control in operations covering a wide range of analyte concentrations to be able to analyse high levels as usually found in adulteration, as well as low levels due to contamination. The paper describes a LC-MS/MS method covering 14 nitrogen-rich adulterants using a simple and fast sample preparation based on dilution and clean-up by dispersive SPE. Quantification is carried out by isotopic dilution reaching LOQs of 0.05-0.20 mg/kg in a broad range of food matrices (infant formula, liquid milk, dairy ingredient, high protein meal, cereal, infant cereal, and meat/fish powder). Validation of seven commodity groups was performed according to SANCO 12571/2013, giving satisfactory results demonstrating the method's fitness for purpose at the validated range at contamination level. Method ruggedness was further assessed by transferring the developed method into another laboratory devoted to routine testing for quality control. Next to the method description, emphasis is placed on challenges and problems appearing during method development as well as validation. They are discussed in detail and solutions are provided.

  14. Stable Protein-Repellent Zwitterionic Polymer Brushes Grafted from Silicon Nitride

    NARCIS (Netherlands)

    Nguyen, A.T.; Baggerman, J.; Paulusse, J.M.J.; Rijn, van C.J.M.; Zuilhof, H.

    2011-01-01

    Zwitterionic poly(sulfobetaine acrylamide) (SBMAA) brushes were grafted from silicon-rich silicon nitride (SixN4, x > 3) surfaces by atom transfer radical polymerization (ATRP) and studied in protein adsorption experiments. To this aim ATRP initiators were immobilized onto SixN4 through stable

  15. Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

    Science.gov (United States)

    van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

    2016-09-01

    We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

  16. Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process

    Science.gov (United States)

    Blázquez, O.; Martín, G.; Camps, I.; Mariscal, A.; López-Vidrier, J.; Ramírez, J. M.; Hernández, S.; Estradé, S.; Peiró, F.; Serna, R.; Garrido, B.

    2018-06-01

    The resistive switching properties of silicon-aluminium oxynitride (SiAlON) based devices have been studied. Electrical transport mechanisms in both resistance states were determined, exhibiting an ohmic behaviour at low resistance and a defect-related Poole‑Frenkel mechanism at high resistance. Nevertheless, some features of the Al top-electrode are generated during the initial electroforming, suggesting some material modifications. An in-depth microscopic study at the nanoscale has been performed after the electroforming process, by acquiring scanning electron microscopy and transmission electron microscopy images. The direct observation of the devices confirmed features on the top electrode with bubble-like appearance, as well as some precipitates within the SiAlON. Chemical analysis by electron energy loss spectroscopy has demonstrated that there is an out-diffusion of oxygen and nitrogen ions from the SiAlON layer towards the electrode, thus forming silicon-rich paths within the dielectric layer and indicating vacancy change to be the main mechanism in the resistive switching.

  17. Stable Protein-Repellent Zwitterionic Polymer Brushes Grafted from Silicon Nitride

    NARCIS (Netherlands)

    Nguyen, Ai T.; Baggerman, Jacob; Paulusse, Jos Marie Johannes; van Rijn, Cees J.M.; Zuilhof, Han

    2011-01-01

    Zwitterionic poly(sulfobetaine acrylamide) (SBMAA) brushes were grafted from silicon-rich silicon nitride (SixN4, x > 3) surfaces by atom transfer radical polymerization (ATRP) and studied in protein adsorption experiments. To this aim ATRP initiators were immobilized onto SixN4 through stable Si−C

  18. Influence of silicon on void nucleation in irradiated alloys

    International Nuclear Information System (INIS)

    Esmailzadeh, B.; Kumar, A.; Garner, F.A.

    1984-01-01

    The addition of silicon to pure nickel, Ni-Cr alloys and Fe-Ni-Cr alloys raises the diffusivity of each of the alloy components. The resultant increase in the effective vacancy diffusion coefficient causes large reductions in the nucleation rate of voids during irradiation. This extends the transient regime of swelling, which is controlled not only by the amount of silicon in solution but also by the precipitation kinetics of precipitates rich in nickel and silicon

  19. Nitrogen-Rich Porous Polymers for Carbon Dioxide and Iodine Sequestration for Environmental Remediation.

    Science.gov (United States)

    Abdelmoaty, Yomna H; Tessema, Tsemre-Dingel; Choudhury, Fatema Akthar; El-Kadri, Oussama M; El-Kaderi, Hani M

    2018-05-09

    The use of fossil fuels for energy production is accompanied by carbon dioxide release into the environment causing catastrophic climate changes. Meanwhile, replacing fossil fuels with carbon-free nuclear energy has the potential to release radioactive iodine during nuclear waste processing and in case of a nuclear accident. Therefore, developing efficient adsorbents for carbon dioxide and iodine capture is of great importance. Two nitrogen-rich porous polymers (NRPPs) derived from 4-bis-(2,4-diamino-1,3,5-triazine)-benzene building block were prepared and tested for use in CO 2 and I 2 capture. Copolymerization of 1,4-bis-(2,4-diamino-1,3,5-triazine)-benzene with terephthalaldehyde and 1,3,5-tris(4-formylphenyl)benzene in dimethyl sulfoxide at 180 °C afforded highly porous NRPP-1 (SA BET = 1579 m 2 g -1 ) and NRPP-2 (SA BET = 1028 m 2 g -1 ), respectively. The combination of high nitrogen content, π-electron conjugated structure, and microporosity makes NRPPs very effective in CO 2 uptake and I 2 capture. NRPPs exhibit high CO 2 uptakes (NRPP-1, 6.1 mmol g -1 and NRPP-2, 7.06 mmol g -1 ) at 273 K and 1.0 bar. The 7.06 mmol g -1 CO 2 uptake by NRPP-2 is the second highest value reported to date for porous organic polymers. According to vapor iodine uptake studies, the polymers display high capacity and rapid reversible uptake release for I 2 (NRPP-1, 192 wt % and NRPP-2, 222 wt %). Our studies show that the green nature (metal-free) of NRPPs and their effective capture of CO 2 and I 2 make this class of porous materials promising for environmental remediation.

  20. Structural behaviour of nitrogen in oxide ceramics

    International Nuclear Information System (INIS)

    Ghauri, K.M.

    1997-01-01

    The solubility of nitrogen in molten oxides has significant consideration for two quite different types of engineering materials. The implication of a knowledge of the role of nitrogen in these oxides for refining high nitrogen steels in obvious but similar nitrogen-bearing oxide melts are of critical importance in the densification of silicon nitride ceramics. Present paper discusses structural behaviour and phase equilibria qualitatively in the light of knowledge available on slag structure through infrared and x-ray diffraction. Nitrogen solubility in glasses and related sialon based ceramics may be of paramount importance to understand the role of nitrogen in these materials as these oxides are similar in composition, structure and characteristics to sintering glasses in nitrogen ceramics. It is quite logical to infer that the same oxide model can be applied in order to massively produce nitrogen alloyed steels which are actively competing to be the materials of the next century. (author)

  1. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    quality, etch rate. The response of these parameters to high temperature anneals were correlated with structural changes in the silicon nitride films as measured by using the hydrogen bond concentration. Plasma enhanced chemical vapour deposition allows continuous variation in nearly all deposition parameters. The parameters studied in this work are the gas flow ratios and excitation power. In both direct and remote deposition systems, the increase in deposition power density lead to higher activation of ammonia which in turn lead to augmented incorporation of nitrogen into the films and thus lower refractive index. For a direct system, the same parameter change lead to a drastic fall in passivation quality of Czochralski silicon attributed to an increase in ion bombardment as well as the general observation that as deposited passivation tends to increase with refractive index. Silicon nitride films with variations in refractive index were also made by varying the silane-to-ammonia gas flow ratio. This simple parameter adjustment makes plasma enhanced chemical vapour deposited silicon nitride applicable to double layer anti-reflective coatings simulated in this work. The films were found to have an etch rate in 5% hydrofluoric acid that decreased with increasing refractive index. This behaviour is attributed to the decreasing concentration of nitrogen-to-hydrogen bonds in the films. Such bonds at the surface of silicon nitride have been suggested to be involved in the main reaction mechanism when etching silicon nitride in hydrofluoric acid. Annealing the films lead to a drastic fall in etch rates and was linked to the release of hydrogen from the nitrogen-hydrogen bonds. (author). 115 refs., 35 figs., 6 tabs

  2. Electronic structure and fine structural features of the air-grown UNxOy on nitrogen-rich uranium nitride

    Science.gov (United States)

    Long, Zhong; Zeng, Rongguang; Hu, Yin; Liu, Jing; Wang, Wenyuan; Zhao, Yawen; Luo, Zhipeng; Bai, Bin; Wang, Xiaofang; Liu, Kezhao

    2018-06-01

    Oxide formation on surface of nitrogen-rich uranium nitride film/particles was investigated using X-ray photoelectron spectroscopy (XPS), auger electron spectroscopy (AES), aberration-corrected transmission electron microscopy (TEM), and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) coupled with electron energy-loss spectroscopy (EELS). XPS and AES studies indicated that the oxidized layer on UN2-x film is ternary compound uranium oxynitride (UNxOy) in 5-10 nm thickness. TEM/HAADF-STEM and EELS studies revealed the UNxOy crystallizes in the FCC CaF2-type structure with the lattice parameter close to the CaF2-type UN2-x matrix. The work can provide further information to the oxidation mechanism of uranium nitride.

  3. Synthesis and theoretical studies on nitrogen-rich salts of bis[4-nitraminofurazanyl-3-azoxy]azofurazan (ADNAAF).

    Science.gov (United States)

    Zheng, Chunmei; Chu, Yuting; Xu, Liwen; Lei, Wu; Wang, Fengyun; Xia, Mingzhu

    2017-01-01

    Multi-furazan compounds bis[4-nitramino- furazanyl-3-azoxy]azofurazan (ADNAAF) and its derivatives were first synthesized by our research group, and their structures were characterized by IR, 1 H-NMR, 13 C-NMR spectrums, and element analysis. ADNAAF was synthesized by nitration reaction of bis[4-aminofurazanyl-3-azoxy]azofurazan (ADAAF), and then reacted with ammonium hydroxide, hydrazine hydrate, and guanidine nitrate to obtain three salts marked as salt 1, 2, and 3, respectively. The thermal stabilities of the three salts were supported by the results of DSC analysis, which shows the decomposition temperatures are all above 190 °C. Their densities, enthalpies of formation, and detonation properties were studied by density functional theory (DFT) method. Salt 1 has the best detonation pressure (P), 37.42 GPa, and detonation velocity (D), 8.88 km/s, while salt 2 has the best nitrogen content and heat of detonation (Q), 1.27 kcal mol -1 . The detonation properties of salt 1 is similar to that of 1,3,5-trinitro-1,3,5-triazineane (RDX). It means that the ammonium cation can provide the better D and P than the cation of hydrazine and guanidine. The three cations offer the enthalpies of formations in the order of hydrazinium > guanidinium > ammonium. Graphical Abstract Nitrogen-rich salts of bis[4-nitraminofurazanyl-3-azoxy]azofurazan(ADNAAF).

  4. Growth, Carbon Isotope Discrimination and Nitrogen Uptake in Silicon and/or Potassium Fed barley Grown under Two Watering Regimes

    Directory of Open Access Journals (Sweden)

    Kurdali, Fawaz

    2013-02-01

    Full Text Available The present pot experiment was an attempt to monitor the beneficial effects of silicon (Si and/or potassium (K applications on growth and nitrogen uptake in barley plants grown under water (FC1 and non water (FC2 stress conditions using 15N and 13C isotopes. Three fertilizer rates of Si (Si50, Si100 and Si200 and one fertilizer rate of K were used. Dry matter (DM and N yield (NY in different plant parts of barley plants was affected by Si and/ or K fertilization as well as by the watering regime level under which the plants have been grown. Solely added K or in combination with adequate rate of Si (Si 100 were more effective in alleviating water stress and producing higher yield in barley plants than solely added Si. However, the latter nutrient was found to be more effective than the former in producing higher spike's N yield. Solely added Si or in combination with K significantly reduced leaves ∆13 C reflecting their bifacial effects on water use efficiency (WUE, particularly in plants grown under well watering regime. This result indicated that Si might be involved in saving water loss through reducing transpiration rate and facilitating water uptake; consequently, increasing WUE. Although the rising of soil humidity generally increased fertilizer nitrogen uptake (Ndff and its use efficiency (%NUE in barley plants, applications of K or Si fertilizers to water stressed plants resulted in significant increments of these parameters as compared with the control. Our results highlight that Si or K is not only involved in amelioration of growth of barley plants, but can also improve nitrogen uptake and fertilizer nitrogen use efficiency particularly under water deficit conditions.

  5. Is a Nitrogen-rich Reference Needed for Canopy Sensor-based Corn Nitrogen Applications?

    Science.gov (United States)

    The nitrogen (N) supplying capacity of the soil available to support corn (Zea mays L.) production can be highly variable both among and within fields. In recent years, canopy reflectance sensing has been investigated for in-season assessment of crop N health and fertilization. Typically, the proced...

  6. Enhanced light emission in photonic crystal nanocavities with Erbium-doped silicon nanocrystals

    International Nuclear Information System (INIS)

    Makarova, Maria; Sih, Vanessa; Vuckovic, Jelena; Warga, Joe; Li Rui; Dal Negro, Luca

    2008-01-01

    Photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals. Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers. The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540 nm wavelength. Experimentally measured quality factors of ∼6000 were found to be consistent theoretical predictions. The Purcell factor of 1.4 was estimated from the observed 20-fold enhancement of Erbium luminescence

  7. Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

    Science.gov (United States)

    Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

    2015-10-05

    In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

  8. An FPGA-based silicon neuronal network with selectable excitability silicon neurons

    Directory of Open Access Journals (Sweden)

    Jing eLi

    2012-12-01

    Full Text Available This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN and the transmitter release based silicon synapse, allow the network to show rich dynamic behaviors and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with $256$ full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs.

  9. Solar cell structure incorporating a novel single crystal silicon material

    Science.gov (United States)

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  10. Dry matter yield, carbon isotope discrimination and nitrogen uptake in silicon and/ or potassium fed chickpea and barley plants grown under water and non-water stress conditions

    International Nuclear Information System (INIS)

    Kurd Ali, F.; Al-Chammaa, M.; Mouasess, A.

    2012-09-01

    A pot experiment was conducted to study the effects of silicon (Si) and/or potassium (K) on dry matter yield, nitrogen uptake and carbon isotope discrimination Δ 13 C in water stressed (FC1) and well watered (FC2) chickpea plants using 15 N and 13 C isotopes. Three fertilizer rates of Si (Si 5 0, Si 1 00 and Si 2 00) and one fertilizer rate of K were used. The results showed that: In chickpeas, it was found, for most of the growth parameters, that Si either alone or in combination with K was more effective to alleviate water stress than K alone. Increasing soil water level from FC1 to FC2 often had a positive impact on values of most studied parameters. The Si 1 00K + (FC1) and Si 5 0K + (FC2) treatments gave high enough amounts of N 2 -fixation, higher dry matter production and greater nitrogen yield. The percent increments of total N 2 -fixed in the above mentioned treatments were 51 and 47% over their controls, respectively. On the other hand, increasing leaves dry matter in response to the solely added Si (Si 5 0K - and Si 1 00K - ) is associated with lower Δ 13 C under both watering regimes. This may indicate that Si fertilization had a beneficial effect on water use efficiency (WUE). Hence, Δ 13 C could be an adequate indicator of WUE in response to the exogenous supply of silicon to chickpea plants. Our results highlight that Si is not only involved in amelioration of growth and in maintaining of water status but it can be considered as an important element for the symbiotic performance of chickpea plants. It can be concluded that synergistic effect of silicon and potassium fertilization with adequate irrigation improves growth and nitrogen fixation in chickpea plants.In barley plants, solely added K or in combination with adequate rate of Si (Si 1 00) were more effective in alleviating water stress and producing higher yield in barley plants than solely added Si. However, the latter nutrient was found to be more effective than the former in producing

  11. Utilization of protein-rich residues in biotechnological processes.

    Science.gov (United States)

    Pleissner, Daniel; Venus, Joachim

    2016-03-01

    A drawback of biotechnological processes, where microorganisms convert biomass constituents, such as starch, cellulose, hemicelluloses, lipids, and proteins, into wanted products, is the economic feasibility. Particularly the cost of nitrogen sources in biotechnological processes can make up a large fraction of total process expenses. To further develop the bioeconomy, it is of considerable interest to substitute cost-intensive by inexpensive nitrogen sources. The aim of this mini-review was to provide a comprehensive insight of utilization methods of protein-rich residues, such as fish waste, green biomass, hairs, and food waste. The methods described include (i) production of enzymes, (ii) recovery of bioactive compounds, and/or (iii) usage as nitrogen source for microorganisms in biotechnological processes. In this aspect, the utilization of protein-rich residues, which are conventionally considered as waste, allows the development of value-adding processes for the production of bioactive compounds, biomolecules, chemicals, and materials.

  12. Polyenergy ion beam synthesis of buried oxynitride layer in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Barabanenkov, M.Yu. E-mail: barab@ipmt-hpm.ac.ru; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I

    2000-11-01

    The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10{sup 17} cm{sup -2}, respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion.

  13. Polyenergy ion beam synthesis of buried oxynitride layer in silicon

    International Nuclear Information System (INIS)

    Barabanenkov, M.Yu.; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I.

    2000-01-01

    The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10 17 cm -2 , respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion

  14. Excitation dependence of photoluminescence in silicon quantum dots

    International Nuclear Information System (INIS)

    Wen Xiaoming; Lap Van Dao; Hannaford, Peter; Cho, E-C; Cho, Young H; Green, Martin A

    2007-01-01

    We have studied the optical properties of silicon quantum dots (QDs) embedded in a silicon oxide matrix using photoluminescence (PL) and time-resolved PL. A broad luminescence band is observed in the red region, in which the time evolution exhibits a stretched exponential decay. With increasing excitation intensity a significant saturation effect is observed. Direct electron-hole recombination is the dominant effect in the red band. A relatively narrow peak appears around 1.5 eV, which is attributed to the interface states overlapping with transition from the ground state of the silicon QDs. The saturation factor increases slowly with detection photon energy between 1.5 and 1.8 eV, which is attributed to the emission from zero-phonon electron-hole recombination. At higher photon energies the significantly increased saturation factor suggests a different emission mechanism, most likely the defect states from silicon, silicon oxide or silicon rich oxide

  15. Forest fuel reduces the nitrogen load - calculations of nitrogen flows

    International Nuclear Information System (INIS)

    Burstroem, F.; Johansson, Jan.

    1995-12-01

    Nitrogen deposition in Sweden has increased strongly during recent decades, particularly in southern Sweden. Nitrogen appears to be largely accumulated in biomass and in the soil. It is therefore desirable to check the accumulation of nitrogen in the forest. The most suitable way of doing this is to remove more nitrogen-rich biomass from the forest, i.e., increase the removal of felling residues from final fellings and cleanings. An ecological condition for intensive removal of fuel is that the ashes are returned. The critical load for nitrogen, CL(N), indicates the level of nitrogen deposition that the forest can withstand without leading to ecological changes. Today, nitrogen deposition is higher than the CL(N) in almost all of Sweden. CL(N) is calculated in such a manner that nitrogen deposition should largely be balanced by nitrogen losses through harvesting during a forest rotation. The value of CL(N) thus largely depends on how much nitrogen is removed with the harvested biomass. When both stems and felling residues are harvested, the CL(N) is about three times higher than in conventional forestry. The increase is directly related to the amount of nitrogen in the removed biofuel. Use of biofuel also causes a certain amount of nitrogen emissions. From the environmental viewpoint there is no difference between the sources of the nitrogen compounds. An analysis of the entire fuel chain shows that, compared with the amount of nitrogen removed from the forest with the fuel, about 5 % will be emitted as nitrogen oxides or ammonia during combustion, and a further ca 5 % during handling and transports. A net amount of about 90 % of biomass nitrogen is removed from the system and becomes inert nitrogen (N 2 ). 60 refs, 3 figs, 4 tabs, 11 appendices

  16. Nitrogen solubility in the deep mantle and the origin of Earth's primordial nitrogen budget

    Science.gov (United States)

    Yoshioka, Takahiro; Wiedenbeck, Michael; Shcheka, Svyatoslav; Keppler, Hans

    2018-04-01

    The solubility of nitrogen in the major minerals of the Earth's transition zone and lower mantle (wadsleyite, ringwoodite, bridgmanite, and Ca-silicate perovskite) coexisting with a reduced, nitrogen-rich fluid phase was measured. Experiments were carried out in multi-anvil presses at 14 to 24 GPa and 1100 to 1800 °C close to the Fe-FeO buffer. Starting materials were enriched in 15N and the nitrogen concentrations in run products were measured by secondary ion mass spectrometry. Observed nitrogen (15N) solubilities in wadsleyite and ringwoodite typically range from 10 to 250 μg/g and strongly increase with temperature. Nitrogen solubility in bridgmanite is about 20 μg/g, while Ca-silicate perovskite incorporates about 30 μg/g under comparable conditions. Partition coefficients of nitrogen derived from coexisting phases are DNwadsleyite/olivine = 5.1 ± 2.1, DNringwoodite/wadsleyite = 0.49 ± 0.29, and DNbridgmanite/ringwoodite = 0.24 (+ 0.30 / - 0.19). Nitrogen solubility in the solid, iron-rich metal phase coexisting with the silicates was also measured and reached a maximum of nearly 1 wt.% 15N at 23 GPa and 1400 °C. These data yield a partition coefficient of nitrogen between iron metal and bridgmanite of DNmetal/bridgmanite ∼ 98, implying that in a lower mantle containing about 1% of iron metal, about half of the nitrogen still resides in the silicates. The high nitrogen solubility in wadsleyite and ringwoodite may be responsible for the low nitrogen concentrations often observed in ultradeep diamonds from the transition zone. Overall, the solubility data suggest that the transition zone and the lower mantle have the capacity to store at least 33 times the mass of nitrogen presently residing in the atmosphere. By combining the nitrogen solubility data in minerals with data on nitrogen solubility in silicate melts, mineral/melt partition coefficients of nitrogen can be estimated, from which the behavior of nitrogen during magma ocean crystallization can

  17. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found......-product. A model, that combine the chemical net reaction and the stoichiometric rules, is found to agree with measured deposition rates for given material compositions. Effects of annealing in a nitrogen atmosphere has been investigated for the 400 °C– 1100 °C temperature range. It is observed that PECVD oxy...

  18. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  19. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    International Nuclear Information System (INIS)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-01-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  20. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Science.gov (United States)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  1. Effect of Silicon in U-10Mo Alloy

    Energy Technology Data Exchange (ETDEWEB)

    Kautz, Elizabeth J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Devaraj, Arun [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kovarik, Libor [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lavender, Curt A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Joshi, Vineet V. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2017-08-31

    This document details a method for evaluating the effect of silicon impurity content on U-10Mo alloys. Silicon concentration in U-10Mo alloys has been shown to impact the following: volume fraction of precipitate phases, effective density of the final alloy, and 235-U enrichment in the gamma-UMo matrix. This report presents a model for calculating these quantities as a function of Silicon concentration, which along with fuel foil characterization data, will serve as a reference for quality control of the U-10Mo final alloy Si content. Additionally, detailed characterization using scanning electron microscope imaging, transmission electron microscope diffraction, and atom probe tomography showed that Silicon impurities present in U-10Mo alloys form a Si-rich precipitate phase.

  2. Photo-Electrical Characterization of Silicon Micropillar Arrays with Radial p/n Junctions Containing Passivation and Anti-Reflection Coatings

    NARCIS (Netherlands)

    Vijselaar, Wouter; Elbersen, R.; Tiggelaar, Roald M.; Gardeniers, Han; Huskens, Jurriaan

    2017-01-01

    In order to assess the contributions of anti-reflective and passivation effects in microstructured silicon-based solar light harvesting devices, thin layers of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon-rich silicon nitride (SiNx), and indium tin oxide (ITO), with a thickness ranging

  3. Attenuation of Thermal Neutrons by Crystalline Silicon

    International Nuclear Information System (INIS)

    Adib, M.; Habib, N.; Ashry, A.; Fathalla, M.

    2002-01-01

    A simple formula is given which allows to calculate the contribution of the total neutron cross - section including the Bragg scattering from different (hkt) planes to the neutron * transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy .A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500μ eV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given

  4. High damage tolerance of electrochemically lithiated silicon

    Science.gov (United States)

    Wang, Xueju; Fan, Feifei; Wang, Jiangwei; Wang, Haoran; Tao, Siyu; Yang, Avery; Liu, Yang; Beng Chew, Huck; Mao, Scott X.; Zhu, Ting; Xia, Shuman

    2015-01-01

    Mechanical degradation and resultant capacity fade in high-capacity electrode materials critically hinder their use in high-performance rechargeable batteries. Despite tremendous efforts devoted to the study of the electro–chemo–mechanical behaviours of high-capacity electrode materials, their fracture properties and mechanisms remain largely unknown. Here we report a nanomechanical study on the damage tolerance of electrochemically lithiated silicon. Our in situ transmission electron microscopy experiments reveal a striking contrast of brittle fracture in pristine silicon versus ductile tensile deformation in fully lithiated silicon. Quantitative fracture toughness measurements by nanoindentation show a rapid brittle-to-ductile transition of fracture as the lithium-to-silicon molar ratio is increased to above 1.5. Molecular dynamics simulations elucidate the mechanistic underpinnings of the brittle-to-ductile transition governed by atomic bonding and lithiation-induced toughening. Our results reveal the high damage tolerance in amorphous lithium-rich silicon alloys and have important implications for the development of durable rechargeable batteries. PMID:26400671

  5. The role of nitrogen in luminescent Si nanoprecipitate formation during annealing of Si ion-implanted SiO sub 2 layers

    CERN Document Server

    Kachurin, G A; Zhuravlev, K S; Ruault, M O

    2001-01-01

    SiO sub 2 layers were implanted with 25 keV Si sup + and 13 keV N sup + ions with the doses of (1-4) x 10 sup 1 sup 6 cm sup - sup 2 and (0.2-2) x 10 sup 1 sup 6 cm sup - sup 2 , respectively. Then the samples were annealed at 900-1100 deg C to form luminescent silicon nanoprecipitates. The nitrogen effect on the process is controlled by photoluminescence spectra. It is found out that the photoluminescence intensity increases considerably at the appropriate ratio between silicon and nitrogen. It has been concluded that the interaction of nitrogen with excessive silicon results in increasing the number of precipitation centers. This raises the nanocrystals number and reduces their mean size

  6. Porous silicon-based passivation and gettering in polycrystalline silicon solar cells

    International Nuclear Information System (INIS)

    Dimassi, W.; Bouaiecha, M.; Saadoun, M.; Bessaies, B.; Ezzaouia, H.; Bennaceur, R.

    2002-01-01

    In this work, we report on the effect of introducing a superficial porous silicon (PS) layer on the electrical characteristics of polycrystalline silicon solar cells. The PS layer was formed using a vapour etching (VE)-based method. In addition to its known anti-reflecting action, the forming hydrogen-rich PS layer acts as a passivating agent for the surface of the cell. As a result we found an improvement of the I-V characteristics in dark conditions and AM1 illumination. We show that when the formation of a superficial PS layer is followed by a heat treatment, gettering of impurities from the polycrystalline silicon material is possible. After the removal of the PS layer and the formation of the photovoltaic (PV) structure, we observed an increase of the light-beam-induced-current (LBIC) for treatment temperatures not exceeding 900 deg. C. An improvement of the bulk minority carrier diffusion length and the grain boundary (GB) recombination velocity were observed as the temperature rises, although a global decrease of the LBIC current was observed for temperatures greater than 900 deg. C

  7. Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams

    International Nuclear Information System (INIS)

    Fearn, Sarah; Chater, Richard; McPhail, David

    2004-01-01

    Sputtering of silicon by low-energy nitrogen primary ion beams has been studied by a number of authors to characterize the altered layer, ripple formation and the sputtered yields of secondary ions [Surf. Sci. 424 (1999) 299; Appl. Phys. A: Mater. Sci. Process 53 (1991) 179; Appl. Phys. Lett. 73 (1998) 1287]. This study examines the application of low-energy nitrogen primary ion beams for the possible depth profiling of ultra-shallow arsenic implants into silicon. The emphasis of this work is on the matrix silicon signals in the pre-equilibrium surface region that are used for dose calibration. Problems with these aspects of the concentration depth profiling can give significant inconsistencies well outside the error limits of the quoted dose for the arsenic implantation as independently verified by CV profiling. This occurs during depth profiling with either oxygen primary ion beams (with and without oxygen leaks) or cesium primary ion beams

  8. Nanostructured silicon nitride from wheat and rice husks

    Energy Technology Data Exchange (ETDEWEB)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Wollmershauser, J. A.; Feng, C. R. [Materials Science and Component Technology Directorate, Naval Research Laboratory, Washington, D.C. 20375 (United States)

    2016-04-07

    Nanoparticles, submicron-diameter tubes, and rods of Si{sub 3}N{sub 4} were synthesized from the thermal treatment of wheat and rice husks at temperatures at and above 1300 °C in a nitrogen atmosphere. The whole pattern Rietveld analysis of the observed diffraction data from treatments at 1300 °C showed the formation of only hexagonal α-phase of Si{sub 3}N{sub 4} with an R-factor of 1%, whereas samples treated at 1400 °C and above showed both α- and β-phases with an R-factor of 2%. Transmission electron microscopy showed the presence of tubes, rods, and nanoparticles of Si{sub 3}N{sub 4}. In a two-step process, where pure SiC was produced first from rice or wheat husk in an argon atmosphere and subsequently treated in a nitrogen atmosphere at 1450 °C, a nanostructured composite material having α- and β-phases of Si{sub 3}N{sub 4} combined with cubic phase of SiC was formed. The thermodynamics of the formation of silicon nitride is discussed in terms of the solid state reaction between organic matter (silica content), which is inherently present in the wheat and rice husks, with the nitrogen from the furnace atmosphere. Nanostructures of silicon nitride formed by a single direct reaction or their composites with SiC formed in a two-step process of agricultural byproducts provide an uncomplicated sustainable synthesis route for silicon nitride used in mechanical, biotechnology, and electro-optic nanotechnology applications.

  9. Study of the main parameters involved in carbothermal reduction reaction of silica aiming to obtain silicon nitride powder

    International Nuclear Information System (INIS)

    Rocha, J.C. da; Greca, M.C.

    1989-01-01

    The influence of main parameters involved in the method of silicon nitride attainment by carbothermal reduction of silica followed by nitridation were studied in isothermal experiments of fine powder mixtures of silica and graphite in a nitrogen gas flow. The time, temperature, rate C/SiO 2 and flow of nitrogen were varied since they are the main parameters involved in this kind of reaction. The products of reaction were analysed by X-ray diffraction to identify the crystalline phases and as a result was obtained the nucleation of silicon nitride phase. Meanwhile, corroborating prior results, we verified to be difficult the progress of the reaction and the inhibition of formation of silicon carbide phase, the last one being associated to the formation of silicon nitride phase due to thermodynamic matters [pt

  10. Nonlinear Silicon Photonic Signal Processing Devices for Future Optical Networks

    Directory of Open Access Journals (Sweden)

    Cosimo Lacava

    2017-01-01

    Full Text Available In this paper, we present a review on silicon-based nonlinear devices for all optical nonlinear processing of complex telecommunication signals. We discuss some recent developments achieved by our research group, through extensive collaborations with academic partners across Europe, on optical signal processing using silicon-germanium and amorphous silicon based waveguides as well as novel materials such as silicon rich silicon nitride and tantalum pentoxide. We review the performance of four wave mixing wavelength conversion applied on complex signals such as Differential Phase Shift Keying (DPSK, Quadrature Phase Shift Keying (QPSK, 16-Quadrature Amplitude Modulation (QAM and 64-QAM that dramatically enhance the telecom signal spectral efficiency, paving the way to next generation terabit all-optical networks.

  11. The Effect of Polymer Char on Nitridation Kinetics of Silicon

    Science.gov (United States)

    Chan, Rickmond C.; Bhatt, Ramakrishna T.

    1994-01-01

    Effects of polymer char on nitridation kinetics of attrition milled silicon powder have been investigated from 1200 to 1350 C. Results indicate that at and above 1250 C, the silicon compacts containing 3.5 wt percent polymer char were fully converted to Si3N4 after 24 hr exposure in nitrogen. In contrast, the silicon compacts without polymer char could not be fully converted to Si3N4 at 1350 C under similar exposure conditions. At 1250 and 1350 C, the silicon compacts with polymer char showed faster nitridation kinetics than those without the polymer char. As the polymer char content is increased, the amount of SiC in the nitrided material is also increased. By adding small amounts (approx. 2.5 wt percent) of NiO, the silicon compacts containing polymer char can be completely nitrided at 1200 C. The probable mechanism for the accelerated nitridation of silicon containing polymer char is discussed.

  12. SOI MESFETs on high-resistivity, trap-rich substrates

    Science.gov (United States)

    Mehr, Payam; Zhang, Xiong; Lepkowski, William; Li, Chaojiang; Thornton, Trevor J.

    2018-04-01

    The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

  13. Is torrefaction of polysaccharides-rich biomass equivalent to carbonization of lignin-rich biomass?

    Science.gov (United States)

    Bilgic, E; Yaman, S; Haykiri-Acma, H; Kucukbayrak, S

    2016-01-01

    Waste biomass species such as lignin-rich hazelnut shell (HS) and polysaccharides-rich sunflower seed shell (SSS) were subjected to torrefaction at 300°C and carbonization at 600°C under nitrogen. The structural variations in torrefied and carbonized biomasses were compared. Also, the burning characteristics under dry air and pure oxygen (oxy-combustion) conditions were investigated. It was concluded that the effects of carbonization on HS are almost comparable with the effects of torrefaction on SSS in terms of devolatilization and deoxygenation potentials and the increases in carbon content and the heating value. Consequently, it can be proposed that torrefaction does not provide efficient devolatilization from the lignin-rich biomass while it is relatively more efficient for polysaccharides-rich biomass. Heat-induced variations in biomass led to significant changes in the burning characteristics under both burning conditions. That is, low temperature reactivity of biomass reduced considerably and the burning shifted to higher temperatures with very high burning rates. Copyright © 2015 Elsevier Ltd. All rights reserved.

  14. Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich In{sub x}Al{sub 1−x}N thin films grown by plasma-assisted dual source reactive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Alizadeh, M., E-mail: alizadeh_kozerash@yahoo.com [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ganesh, V.; Goh, B.T. [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Dee, C.F.; Mohmad, A.R. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, Bangi, Selangor (Malaysia); Rahman, S.A., E-mail: saadah@um.edu.my [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-08-15

    Highlights: • In-rich In{sub x}Al{sub 1−x}N films were grown by Plasma-aided reactive evaporation. • Effect of nitrogen flow rate on the films properties was investigated. • The band gap of the films was varied from 1.17 to 0.90 eV. • By increasing N{sub 2} flow rate the In{sub x}Al{sub 1−x}N films tend to turn into amorphous state. • At higher N{sub 2} flow rate agglomeration of the particles is highly enhanced. - Abstract: In-rich In{sub x}Al{sub 1−x}N thin films were deposited on quartz substrate at various nitrogen flow rates by plasma-assisted dual source reactive evaporation technique. The elemental composition, surface morphology, structural and optical properties of the films were investigated by X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray diffraction (XRD), UV–vis spectrophotometer and photoluminescence (PL) measurements. XPS results revealed that the indium composition (x) of the In{sub x}Al{sub 1−x}N films increases from 0.90 to 0.97 as the nitrogen flow rate is increased from 40 to 100 sccm, respectively. FESEM images of the surface and cross-sectional microstructure of the In{sub x}Al{sub 1−x}N films showed that by increasing the N{sub 2} flow rate, the grown particles are highly agglomerated. Raman and XRD results indicated that by increasing nitrogen flow rate the In-rich In{sub x}Al{sub 1−x}N films tend to turn into amorphous state. It was found that band gap energy of the films are in the range of 0.90–1.17 eV which is desirable for the application of full spectra solar cells.

  15. Amorphous silicon prepared from silane-hydrogen mixture

    International Nuclear Information System (INIS)

    Pietruszko, S.M.

    1982-09-01

    Amorphous silicon films prepared from a d.c. discharge of 10% SiH 4 - 90% H 2 mixture are found to have properties similar to those made from 100% SiH 4 . These films are found to be quite stable against prolonged light exposure. The effect of nitrogen on the properties of these films was investigated. It was found that instead of behaving as a classical donor, nitrogen introduces deep levels in the material. Field effect experiments on a-Si:H films at the bottom (film-substrate interface) and the top (film-vacuum interface) of the film are also reported. (author)

  16. The Role of Silicon under Biotic and Abiotic Stress Conditions

    Directory of Open Access Journals (Sweden)

    İlkay YAVAŞ

    2017-06-01

    Full Text Available Biotic and abiotic stress factors can adversely affect the agricultural productivity leading to physiological and biochemical damage to crops. Therefore, the most effective way is to increase the resistance to stresses. Silicon plays a ro le in reducing the effects of abiotic and biotic stresses (drought, salt stress, disease and insect stress etc. on plants. Silicon is accumulated in the cell walls and intercellular spaces and thus it has beneficial effects on disease infestations in especially small grains. The application of silicon may reduce the effects of environmental stresses on plants while making effective use of plant nutrients such as nitrogen and phosphorous. Also, silicon may reduce the toxic effects of heavy metals in soil. I t may protect the foliage and increase light uptake and reduce respiration. Therefore, in this review, we discussed the effects of silicon on abiotic and biotic stresses in especially field crops.

  17. Nitrogen and oxygen co-doped carbon nanofibers with rich sub-nanoscale pores as self-supported electrode material of high-performance supercapacitors

    International Nuclear Information System (INIS)

    Li, Qun; Xie, Wenhe; Liu, Dequan; Wang, Qi; He, Deyan

    2016-01-01

    Self-supported porous carbon nanofibers (CNFs) network has been prepared by electrospinning technology assisted with template method. The as-prepared material is rich in sub-nanoscale pores and nitrogen and oxygen functional groups, which can serve as a fast conductive network with abundant electrochemical active sites and greatly facilitates the transport of electrons and ions. When the porous CNFs network is used as an electrode for supercapacitor in a three electrode system, it displays a high capacitance of 233.1 F/g at 0.2 A/g, and a capacitance of 130.2 F/g even at 14 A/g. It maintains a capacitance of 154.0 F/g with 90.17% retention after 4000 cycles at 2 A/g. Moreover, the assembled symmetric supercapacitor not only exhibits excellent rate capability and cycle performance, but also delivers an energy density of 4.17 Wh/kg and a power density of 2500 W/kg. The experimental results demonstrate that the prepared N, O co-doped carbon nanofibers with rich sub-nanoscale pores are a promising electrode material for high-performance supercapacitors.

  18. Nitrogen-doped porous “green carbon” derived from shrimp shell: Combined effects of pore sizes and nitrogen doping on the performance of lithium sulfur battery

    Energy Technology Data Exchange (ETDEWEB)

    Qu, Jiangying, E-mail: qujy@lnnu.edu.cn [Faculty of Chemistry and Chemical Engineering, Liaoning Normal University, Dalian, 116029 (China); Carbon Research Laboratory, Center for Nano Materials and Science, School of Chemical Engineering, State Key Lab of Fine Chemicals, Dalian University of Technology, Dalian, 116024 (China); Lv, Siyuan; Peng, Xiyue; Tian, Shuo; Wang, Jia [Faculty of Chemistry and Chemical Engineering, Liaoning Normal University, Dalian, 116029 (China); Gao, Feng, E-mail: fenggao2003@163.com [Faculty of Chemistry and Chemical Engineering, Liaoning Normal University, Dalian, 116029 (China); Carbon Research Laboratory, Center for Nano Materials and Science, School of Chemical Engineering, State Key Lab of Fine Chemicals, Dalian University of Technology, Dalian, 116024 (China)

    2016-06-25

    Nitrogen-rich porous “green carbons” derived from abundant shrimp shell shows good performance for Li–S batteries. The strategy in this work is highlighted to selective removal of intrinsic CaCO{sub 3} in shrimp shell followed by KOH activation to tune the pore sizes of the obtained carbons. On the basis of the different porous structures, the discharge capacity of the obtained carbons as Li–S cathodes follows the order of micro-mesoporous carbon>mesoporous carbon>microporous carbon. The high capacity of the micro-mesoporous carbon is attributed to its positive characters such as the coexistence of micro-mesoporous structure, the large pore volume and the high specific surface area. Furthermore, well-dispersed nitrogen in the porous carbons is naturally doped and inherited from shrimp shell, and can help to enhance cycle stability when used as cathodes. As a result, all carbon cathodes exhibit the good cycle stability (>78%) due to their nitrogen doping induced chemical adsorption of sulfur on the surface areas of the porous carbons. Among them, mesoporous carbon cathode shows the best cycle stability with 90% retention within 100 cycles, which is mainly attributed to the synergistic effects of its both large pore size (5.12 nm) and high nitrogen content (6.67 wt %). - Highlights: • Nitrogen-rich porous “green carbons” derived from abundant shrimp shell shows good performance for Li–S batteries. • Intrinsic CaCO{sub 3} in shrimp shell as the natural template plays an important role on tailoring of the pore sizes of the porous carbons. • Nitrogen containing polysaccharide in shrimp shell benefits to produce nitrogen-rich carbons. • The effects of pore sizes on the electrochemical performance are investigated in detail. • The carbon-sulfur cathodes exhibit the good cycle stability because of nitrogen doping induced chemical adsorption of sulfur.

  19. Nitrogen-doped porous “green carbon” derived from shrimp shell: Combined effects of pore sizes and nitrogen doping on the performance of lithium sulfur battery

    International Nuclear Information System (INIS)

    Qu, Jiangying; Lv, Siyuan; Peng, Xiyue; Tian, Shuo; Wang, Jia; Gao, Feng

    2016-01-01

    Nitrogen-rich porous “green carbons” derived from abundant shrimp shell shows good performance for Li–S batteries. The strategy in this work is highlighted to selective removal of intrinsic CaCO_3 in shrimp shell followed by KOH activation to tune the pore sizes of the obtained carbons. On the basis of the different porous structures, the discharge capacity of the obtained carbons as Li–S cathodes follows the order of micro-mesoporous carbon>mesoporous carbon>microporous carbon. The high capacity of the micro-mesoporous carbon is attributed to its positive characters such as the coexistence of micro-mesoporous structure, the large pore volume and the high specific surface area. Furthermore, well-dispersed nitrogen in the porous carbons is naturally doped and inherited from shrimp shell, and can help to enhance cycle stability when used as cathodes. As a result, all carbon cathodes exhibit the good cycle stability (>78%) due to their nitrogen doping induced chemical adsorption of sulfur on the surface areas of the porous carbons. Among them, mesoporous carbon cathode shows the best cycle stability with 90% retention within 100 cycles, which is mainly attributed to the synergistic effects of its both large pore size (5.12 nm) and high nitrogen content (6.67 wt %). - Highlights: • Nitrogen-rich porous “green carbons” derived from abundant shrimp shell shows good performance for Li–S batteries. • Intrinsic CaCO_3 in shrimp shell as the natural template plays an important role on tailoring of the pore sizes of the porous carbons. • Nitrogen containing polysaccharide in shrimp shell benefits to produce nitrogen-rich carbons. • The effects of pore sizes on the electrochemical performance are investigated in detail. • The carbon-sulfur cathodes exhibit the good cycle stability because of nitrogen doping induced chemical adsorption of sulfur.

  20. Synthesis of N-rich microporous carbon materials from chitosan by alkali activation using Na_2CO_3

    International Nuclear Information System (INIS)

    Ilnicka, Anna; Lukaszewicz, Jerzy P.

    2015-01-01

    Highlights: • The novel manufacturing procedure of nitrogen-rich carbon materials. • The biopolymer chitosan can be activated by sodium carbonate. • The effect of the addition of activator and the temperature of carbonization was investigated. • The N-rich carbon materials exhibit high specific surface area and microporous structure. - Abstract: The paper presents the first systematic study on the synthesis of nitrogen-rich nanoporous activated carbons by chitosan carbonization in the presence of a hard template (activator), i.e. Na_2CO_3. Carbonization process was carried out in the range of 600–900 °C under a flow of nitrogen. The effect of the addition of different volumes of activator and the temperature of carbonization on the development of specific surface area and pore structure (pore volume and median pore diameter) of the activated carbons was investigated. Additionally, the nitrogen content and nitrogen-containing surface species were determined by means of XPS and combustion elemental analysis. The nitrogen content was placed in the range of 2.4–13.1 wt.%. On the grounds of the low-temperature adsorption of nitrogen, it was found that obtained adsorption isotherms were of type-I, based on the IUPAC classification, which is typical for microporous materials.

  1. Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN x : role of chlorine in plasma enhanced chemical vapour deposition

    Science.gov (United States)

    Mon-Pérez, E.; Salazar, J.; Ramos, E.; Santoyo Salazar, J.; López Suárez, A.; Dutt, A.; Santana, G.; Marel Monroy, B.

    2016-11-01

    Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from a technological and application point of view. Thus, being able to synthesize them in situ during the matrix growth process is technologically advantageous. The use of SiH2Cl2 as the silicon precursor in the plasma enhanced chemical vapour deposition (PECVD) process allows us to obtain Si-QDs without post-thermal annealing. Foremost in this work, is a theoretical rationalization of the mechanism responsible for Si-QD generation in a film including an analysis of the energy released by the extraction of HCl and the insertion of silylene species into the terminal surface bonds. From the results obtained using density functional theory (DFT), we propose an explanation of the mechanism responsible for the formation of Si-QDs in non-stoichiometric SiN x starting from chlorinated precursors in a PECVD system. Micrograph images obtained through transmission electron microscopy confirmed the presence of Si-QDs, even in nitrogen-rich (N-rich) samples. The film stoichiometry was controlled by varying the growth parameters, in particular the NH3/SiH2Cl2 ratio and hydrogen dilution. Experimental and theoretical results together show that using a PECVD system, along with chlorinated precursors it is possible to obtain Si-QDs at a low substrate temperature without annealing treatment. The optical property studies carried out in the present work highlight the prospects of these thin films for down shifting and as an antireflection coating in silicon solar cells.

  2. Four-branched compounds coupled Si and iron-rich intermetallics in near eutectic Al-Si alloys

    International Nuclear Information System (INIS)

    Wu, Yuying; Liu, Xiangfa; Jiang, Binggang; Bian, Xiufang

    2007-01-01

    Many four-branched compounds coupled Si and iron-rich intermetallics were observed in near eutectic Al-Si alloy modified with Al-P master alloy. Such four-branched compounds have never been reported before, but in our case it seems to be commonly observed. In this work the growth characterization of the four-branched compounds are scrutinized with a JXA-8800 electron microprobe (EPMA). More deep study of the formation of four-branched compounds is performed by SEM and TEM analysis. The characterization of the four-branched compounds is that of a primary silicon in the center with four iron-rich intermetallics around. Experimental results also show that the precipitation of primary silicon is the key factor for the formation of four-branched compounds. And WHS-theory explains the growth mechanism of the four-branched compounds. In detail, subsequent twinning within the primary silicon provides four-fold coordination sites on the surface, and then the α-Al(Fe,Mn)-Si phase nucleates on the surface of the primary silicon

  3. Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film

    International Nuclear Information System (INIS)

    Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

    2015-01-01

    Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices’ applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H 2 O 2 /HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing. (paper)

  4. Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film.

    Science.gov (United States)

    Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

    2015-04-17

    Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices' applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H2O2/HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing.

  5. Application of plasma silicon nitride to crystalline thin-film silicon solar cells. Paper

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, J.; Oberbeck, L.; Rinke, T.J.; Berge, C.; Bergmann, R.B.

    2002-07-01

    We use plasma-enhanced chemical vapour deposition to deposit silicon nitride (SiN{sub x}) films at low temperature(400 C) onto the front surface of two different types of crystalline thin-film Si solar cells. The silicon nitride acts as an excellent antireflection coating on Si and provides a very high degree of electronic surface passivation over a wide range of compositions, including near-stoichiometric and Si-rich SiN{sub x}. Application of stoichiometric SiN{sub x} to non-textured thin-film cells, epitaxially grown at low temperature by ion-assisted deposition onto a monocrystalline Si substrate, results in an open-circuit voltage of 622 mV, a short-circuit current density of 26.6 mA/cm{sup 2} and an efficiency of 12.7%. It is shown that the SiN{sub x}-passivated in-situ grown n{sup +}-emitter of this cell type allows to reach open-circuit voltages of up to 667 mV. Silicon-rich SiN{sub x} is applied to the phosphorus-diffused n{sup +}-emitter of a textured thin-film cell on a glass superstrate fabricated by layer-transfer. The emitter saturation current density of these cells is only 40-64 fA/cm{sup 2}, which allows for open-circuit voltages of up to 699 mV. An impressively high open-circuit voltage of 638 mV and a short-circuit current density of 32.0 mA/cm{sup 2} are obtained for a 25 {mu}m thick SiN{sub x}-passivated, random pyramid-textured transfer cell. A transfer cell efficiency of 15.3% is independently confirmed.

  6. Nitrogen and phosphorus resorption in a neotropical rain forest of a nutrient-rich soil

    Directory of Open Access Journals (Sweden)

    José Luis Martínez-Sánchez

    2005-09-01

    Full Text Available In tropical forests with nutrient-rich soil tree’s nutrient resorption from senesced leaves has not always been observed to be low. Perhaps this lack of consistence is partly owing to the nutrient resorption methods used. The aim of the study was to analyse N and P resorption proficiency from tropical rain forest trees in a nutrient-rich soil. It was hypothesised that trees would exhibit low nutrient resorption in a nutrient-rich soil. The soil concentrations of total N and extractable P, among other physical and chemical characteristics, were analysed in 30 samples in the soil surface (10 cm of three undisturbed forest plots at ‘Estación de Biología Los Tuxtlas’ on the east coast of Mexico (18°34’ - 18°36’ N, 95°04’ - 95°09’ W. N and P resorption proficiency were determined from senescing leaves in 11 dominant tree species. Nitrogen was analysed by microkjeldahl digestion with sulphuric acid and distilled with boric acid, and phosphorus was analysed by digestion with nitric acid and perchloric acid. Soil was rich in total N (0.50%, n = 30 and extractable P (4.11 µg g-1, n = 30. As expected, trees showed incomplete N (1.13%, n = 11 and P (0.11%, n = 11 resorption. With a more accurate method of nutrient resorption assessment, it is possible to prove that a forest community with a nutrient-rich soil can have low levels of N and P resorption. Rev. Biol. Trop. 53(3-4: 353-359. Epub 2005 Oct 3.En las selvas tropicales con suelos fértiles se ha observado que la reabsorción de nutrientes de los arboles de las hojas seniles no siempre es baja. Esta falta de consistencia en el resultado es talvez debida en parte a la metodología de reabsorción de nutrientes utilizada. El objetivo de este estudio fue analizar la reabsorción final de N y P de arboles de la selva húmeda tropical en un suelo rico en nutrientes. La hipótesis planteada fue que en un suelo rico en nutrientes los arboles presentarían una baja reabsorción final de

  7. Hydrogen isotopic substitution experiments in nanostructured porous silicon

    International Nuclear Information System (INIS)

    Palacios, W.D.; Koropecki, R.R.; Arce, R.D.; Busso, A.

    2008-01-01

    Nanostructured porous silicon is usually prepared by electrochemical anodization of monocrystalline silicon using a fluorine-rich electrolyte. As a result of this process, the silicon atoms conserve their original crystalline location, and many of the dangling bonds appearing on the surface of the nanostructure are saturated by hydrogen coming from the electrolyte. This work presents an IR study of the effects produced by partial substitution of water in the electrolytic solution by deuterium oxide. The isotopic effects on the IR spectra are analyzed for the as-prepared samples and for the samples subjected to partial thermal effusion of hydrogen and deuterium. We demonstrate that, although deuterium is chemically indistinguishable from hydrogen, it presents a singular behaviour when used in porous silicon preparation. We found that deuterium preferentially bonds forming Si-DH groups. A possible explanation of the phenomenon is presented, based on the different diffusivities of hydrogen and deuterium

  8. Hydrogen isotopic substitution experiments in nanostructured porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, W.D. [Facultad de Ciencias Exactas y Naturales y Agrimensura - (UNNE), Avenida Libertad 5500, 3400 Corrientes (Argentina); Koropecki, R.R. [INTEC (CONICET-UNL), Gueemes 3450, 3000 Santa Fe (Argentina)], E-mail: rkoro@intec.ceride.gov.ar; Arce, R.D. [INTEC (CONICET-UNL), Gueemes 3450, 3000 Santa Fe (Argentina); Busso, A. [Facultad de Ciencias Exactas y Naturales y Agrimensura - (UNNE), Avenida Libertad 5500, 3400 Corrientes (Argentina)

    2008-04-30

    Nanostructured porous silicon is usually prepared by electrochemical anodization of monocrystalline silicon using a fluorine-rich electrolyte. As a result of this process, the silicon atoms conserve their original crystalline location, and many of the dangling bonds appearing on the surface of the nanostructure are saturated by hydrogen coming from the electrolyte. This work presents an IR study of the effects produced by partial substitution of water in the electrolytic solution by deuterium oxide. The isotopic effects on the IR spectra are analyzed for the as-prepared samples and for the samples subjected to partial thermal effusion of hydrogen and deuterium. We demonstrate that, although deuterium is chemically indistinguishable from hydrogen, it presents a singular behaviour when used in porous silicon preparation. We found that deuterium preferentially bonds forming Si-DH groups. A possible explanation of the phenomenon is presented, based on the different diffusivities of hydrogen and deuterium.

  9. Nitrogen and protein contents in some aquatic plant species

    Directory of Open Access Journals (Sweden)

    Krystyna Bytniewska

    2015-01-01

    Full Text Available Nitrogen and protein contents in higher aquatic plants deriving from a natural habitat were determined. The following plants were examined: Spirodela polyrrhiza (L. Schleid., Elodea canadensis Rich., Riccia fluitans L. Total nitrogen and nitrogen of respective fractions were determined by the Kjeldahl method. Nitrogen compounds were fractionated according to Thimann et al. Protein was extracted after Fletcher and Osborne and fractionated after Osborne. It was found, that total protein content in the plants under examination constitutes 18 to 25%o of dry matter. Albumins and glutelins are the most abundant protein fractions.

  10. Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

    Science.gov (United States)

    Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

    2015-09-02

    In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

  11. On the use of silicon as thermal neutron filter

    International Nuclear Information System (INIS)

    Adib, M.; Habib, N.; Ashry, A.; Fathalla, M.

    2003-01-01

    A simple formula is given which allows to calculate the contribution of the total neutron cross-section including the Bragg scattering from different (hkl) planes to the neutron transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy. A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500 μeV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given

  12. On the use of silicon as thermal neutron filter

    Energy Technology Data Exchange (ETDEWEB)

    Adib, M.; Habib, N.; Ashry, A.; Fathalla, M. E-mail: mohamedfathalla@hotmail.com

    2003-12-01

    A simple formula is given which allows to calculate the contribution of the total neutron cross-section including the Bragg scattering from different (hkl) planes to the neutron transmission through a solid crystalline silicon. The formula takes into account the silicon form of poly or mono crystals and its parameters. A computer program DSIC was developed to provide the required calculations. The calculated values of the total neutron cross-section of perfect silicon crystal at room and liquid nitrogen temperatures were compared with the experimental ones. The obtained agreement shows that the simple formula fits the experimental data with sufficient accuracy. A good agreement was also obtained between the calculated and measured values of polycrystalline silicon in the energy range from 5 eV to 500 {mu}eV. The feasibility study on using a poly-crystalline silicon as a cold neutron filter and mono-crystalline as a thermal neutron one is given. The optimum crystal thickness, mosaic spread, temperature and cutting plane for efficiently transmitting the thermal reactor neutrons, while rejecting both fast neutrons and gamma rays accompanying the thermal ones for the mono crystalline silicon are also given.

  13. Nitrogen-Rich Energetic Metal-Organic Framework: Synthesis, Structure, Properties, and Thermal Behaviors of Pb(II Complex Based on N,N-Bis(1H-tetrazole-5-yl-Amine

    Directory of Open Access Journals (Sweden)

    Qiangqiang Liu

    2016-08-01

    Full Text Available The focus of energetic materials is on searching for a high-energy, high-density, insensitive material. Previous investigations have shown that 3D energetic metal–organic frameworks (E-MOFs have great potential and advantages in this field. A nitrogen-rich E-MOF, Pb(bta·2H2O [N% = 31.98%, H2bta = N,N-Bis(1H-tetrazole-5-yl-amine], was prepared through a one-step hydrothermal reaction in this study. Its crystal structure was determined through single-crystal X-ray diffraction, Fourier transform infrared spectroscopy, and elemental analysis. The complex has high heat denotation (16.142 kJ·cm−3, high density (3.250 g·cm−3, and good thermostability (Tdec = 614.9 K, 5 K·min−1. The detonation pressure and velocity obtained through theoretical calculations were 43.47 GPa and 8.963 km·s−1, respectively. The sensitivity test showed that the complex is an impact-insensitive material (IS > 40 J. The thermal decomposition process and kinetic parameters of the complex were also investigated through thermogravimetry and differential scanning calorimetry. Non-isothermal kinetic parameters were calculated through the methods of Kissinger and Ozawa-Doyle. Results highlighted the nitrogen-rich MOF as a potential energetic material.

  14. Forest fuel reduces the nitrogen load

    International Nuclear Information System (INIS)

    Lundborg, A.

    1993-03-01

    A study of the literature was made on the basis of the following hypothesis: ''If nitrogen-rich felling residues are removed from the forest, the nitrogen load on the forest ecosystem is decreased and the risk of nitrogen saturation also decreases''. The study was designed to provide information on how the nitrogen situation is influenced if felling residues are removed from nitrogen-loaded forests and used as fuel. Felling residues release very little nitrogen during the first years after felling. They can immobilize nitrogen from the surroundings, make up a considerable addition to the nitrogen store in the soil, but also release nitrogen in later stages of degradation. The slash has an influence on the soil climate and thus on soil processes. Often there is an increase in the mineralization of litter and humus below the felling residues. At the same time, nitrification is favoured, particularly if the slash is left in heaps. Felling residues contain easily soluble nutrients that stimulate the metabolization of organic matter that otherwise is rather resistant to degradation. The slash also inhibits the clear-cut vegetation and its uptake of nitrogen. These effects result in increased leaching of nitrogen and minerals if the felling residues are left on the site. (99 refs.)

  15. Nitrogen recycling from fuel-extracted algal biomass: residuals as the sole nitrogen source for culturing Scenedesmus acutus.

    Science.gov (United States)

    Gu, Huiya; Nagle, Nick; Pienkos, Philip T; Posewitz, Matthew C

    2015-05-01

    In this study, the reuse of nitrogen from fuel-extracted algal residues was investigated. The alga Scenedesmus acutus was found to be able to assimilate nitrogen contained in amino acids, yeast extracts, and proteinaceous alga residuals. Moreover, these alternative nitrogen resources could replace nitrate in culturing media. The ability of S. acutus to utilize the nitrogen remaining in processed algal biomass was unique among the promising biofuel strains tested. This alga was leveraged in a recycling approach where nitrogen is recovered from algal biomass residuals that remain after lipids are extracted and carbohydrates are fermented to ethanol. The protein-rich residuals not only provided an effective nitrogen resource, but also contributed to a carbon "heterotrophic boost" in subsequent culturing, improving overall biomass and lipid yields relative to the control medium with only nitrate. Prior treatment of the algal residues with Diaion HP20 resin was required to remove compounds inhibitory to algal growth. Copyright © 2014 Elsevier Ltd. All rights reserved.

  16. Second-harmonic generation in substoichiometric silicon nitride layers

    Science.gov (United States)

    Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

    2013-03-01

    Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

  17. Nanostructured silicon anodes for lithium ion rechargeable batteries.

    Science.gov (United States)

    Teki, Ranganath; Datta, Moni K; Krishnan, Rahul; Parker, Thomas C; Lu, Toh-Ming; Kumta, Prashant N; Koratkar, Nikhil

    2009-10-01

    Rechargeable lithium ion batteries are integral to today's information-rich, mobile society. Currently they are one of the most popular types of battery used in portable electronics because of their high energy density and flexible design. Despite their increasing use at the present time, there is great continued commercial interest in developing new and improved electrode materials for lithium ion batteries that would lead to dramatically higher energy capacity and longer cycle life. Silicon is one of the most promising anode materials because it has the highest known theoretical charge capacity and is the second most abundant element on earth. However, silicon anodes have limited applications because of the huge volume change associated with the insertion and extraction of lithium. This causes cracking and pulverization of the anode, which leads to a loss of electrical contact and eventual fading of capacity. Nanostructured silicon anodes, as compared to the previously tested silicon film anodes, can help overcome the above issues. As arrays of silicon nanowires or nanorods, which help accommodate the volume changes, or as nanoscale compliant layers, which increase the stress resilience of silicon films, nanoengineered silicon anodes show potential to enable a new generation of lithium ion batteries with significantly higher reversible charge capacity and longer cycle life.

  18. Tribological studies of ultrahigh dose nitrogen-implanted iron and stainless steel

    International Nuclear Information System (INIS)

    Wei, R.; Wilbur, P.J.; Ozturk, O.; Williamson, D.L.

    1991-01-01

    The effects of nitrogen implantation to doses as high as 1x10 19 ions/cm 2 on the sliding wear resistance and nitrogen concentration depth profiles are examined experimentally. By maintaining the proper implantation temperature, increases in dose induce the formation of thicker nitrogen-rich, wear-resistant layers. Several microns thick layers are demonstrated for both iron and stainless steel. (orig.)

  19. Recycling silicon wire-saw slurries: separation of silicon and silicon carbide in a ramp settling tank under an applied electrical field.

    Science.gov (United States)

    Tsai, Tzu-Hsuan; Shih, Yu-Pei; Wu, Yung-Fu

    2013-05-01

    The growing demand for silicon solar cells in the global market has greatly increased the amount of silicon sawing waste produced each year. Recycling kerf Si and SiC from sawing waste is an economical method to reduce this waste. This study reports the separation of Si and SiC using a ramp settling tank. As they settle in an electrical field, small Si particles with higher negative charges have a longer horizontal displacement than SiC particles in a solution of pH 7, resulting in the separation of Si and SiC. The agreement between experimental results and predicted results shows that the particles traveled a short distance to reach the collection port in the ramp tank. Consequently, the time required for tiny particles to hit the tank bottom decreased, and the interference caused by the dispersion between particles and the fluid motion during settling decreased. In the ramp tank, the highest purities of the collected SiC and Si powders were 95.2 and 7.01 wt%, respectively. Using a ramp tank, the recycling fraction of Si-rich powders (SiC tanks. Recycling Si and SiC abrasives from the silicon sawing waste is regarded as an economical solution to reduce the sawing waste. However, the separation of Si and SiC is difficult. This study reports the separation of Si and SiC using a ramp settling tank under an applied electrical field. As they settle in an electrical field, small Si particles with higher negative charges have a longer horizontal displacement than SiC particles in a solution of pH 7, resulting in the separation of Si and SiC. Compared with the rectangular tanks, the recycling fraction of Si-rich powders using a ramp tank is greater, and the proposed ramp settling tank is more suitable for industrial applications.

  20. Silicon Burning. II. Quasi-Equilibrium and Explosive Burning

    International Nuclear Information System (INIS)

    Hix, W.R.; Thielemann, F.

    1999-01-01

    Having examined the application of quasi-equilibrium to hydrostatic silicon burning in Paper I of this series, we now turn our attention to explosive silicon burning. Previous authors have shown that for material that is heated to high temperature by a passing shock and then cooled by adiabatic expansion, the results can be divided into three broad categories, incomplete burning, normal freezeout, and α-rich freezeout, with the outcome depending on the temperature, density, and cooling timescale. In all three cases, we find that the important abundances obey quasi-equilibrium for temperatures greater than approximately 3x10 9 K, with relatively little nucleosynthesis occurring following the breakdown of quasi-equilibrium. We will show that quasi-equilibrium provides better abundance estimates than global nuclear statistical equilibrium, even for normal freezeout, and particularly for α-rich freezeout. We will also examine the accuracy with which the final nuclear abundances can be estimated from quasi-equilibrium. copyright copyright 1999. The American Astronomical Society

  1. Temporal-spatial dynamics in orthoptera in relation to nutrient availability and plant species richness.

    Directory of Open Access Journals (Sweden)

    Rob J J Hendriks

    Full Text Available Nutrient availability in ecosystems has increased dramatically over the last century. Excess reactive nitrogen deposition is known to negatively impact plant communities, e.g. by changing species composition, biomass and vegetation structure. In contrast, little is known on how such impacts propagate to higher trophic levels. To evaluate how nitrogen deposition affects plants and herbivore communities through time, we used extensive databases of spatially explicit historical records of Dutch plant species and Orthoptera (grasshoppers and crickets, a group of animals that are particularly susceptible to changes in the C:N ratio of their resources. We use robust methods that deal with the unstandardized nature of historical databases to test whether nitrogen deposition levels and plant richness changes influence the patterns of richness change of Orthoptera, taking into account Orthoptera species functional traits. Our findings show that effects indeed also propagate to higher trophic levels. Differences in functional traits affected the temporal-spatial dynamics of assemblages of Orthoptera. While nitrogen deposition affected plant diversity, contrary to our expectations, we could not find a strong significant effect of food related traits. However we found that species with low habitat specificity, limited dispersal capacity and egg deposition in the soil were more negativly affected by nitrogen deposition levels. Despite the lack of significant effect of plant richness or food related traits on Orthoptera, the negative effects of nitrogen detected within certain trait groups (e.g. groups with limited disperse ability could be related to subtle changes in plant abundance and plant quality. Our results, however, suggest that the changes in soil conditions (where many Orthoptera species lay their eggs or other habitat changes driven by nitrogen have a stronger influence than food related traits. To fully evaluate the negative effects of nitrogen

  2. Mitigation effects of silicon rich amendments on heavy metal accumulation in rice (Oryza sativa L.) planted on multi-metal contaminated acidic soil.

    Science.gov (United States)

    Gu, Hai-Hong; Qiu, Hao; Tian, Tian; Zhan, Shu-Shun; Deng, Teng-Hao-Bo; Chaney, Rufus L; Wang, Shi-Zhong; Tang, Ye-Tao; Morel, Jean-Louis; Qiu, Rong-Liang

    2011-05-01

    The mechanisms of stabilization by silicon-rich amendments of cadmium, zinc, copper and lead in a multi-metal contaminated acidic soil and the mitigation of metal accumulation in rice were investigated in this study. The results from a pot experiment indicated that the application of fly ash (20 and 40gkg(-1)) and steel slag (3 and 6gkg(-1)) increased soil pH from 4.0 to 5.0-6.4, decreased the phytoavailability of heavy metals by at least 60%, and further suppressed metal uptake by rice. Diffusion gradient in thin-film measurement showed the heavy metal diffusion fluxes from soil to solution decreased by greater than 84% after remediation. X-ray diffraction analysis indicated the mobile metals were mainly deposited as their silicates, phosphates and hydroxides in amended treatments. Moreover, it was found metal translocation from stem to leaf was dramatically restrained by adding amendments, which might be due to the increase of silicon concentration and co-precipitation with heavy metals in stem. Finally, a field experiment showed the trace element concentrations in polished rice treated with amendments complied with the food safety standards of China. These results demonstrated fly ash and steel slag could be effective in mitigating heavy metal accumulation in rice grown on multi-metal contaminated acidic soils. Copyright © 2011 Elsevier Ltd. All rights reserved.

  3. Synthesis of N-rich microporous carbon materials from chitosan by alkali activation using Na{sub 2}CO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Ilnicka, Anna; Lukaszewicz, Jerzy P., E-mail: jerzy_lukaszewicz@o2.pl

    2015-11-15

    Highlights: • The novel manufacturing procedure of nitrogen-rich carbon materials. • The biopolymer chitosan can be activated by sodium carbonate. • The effect of the addition of activator and the temperature of carbonization was investigated. • The N-rich carbon materials exhibit high specific surface area and microporous structure. - Abstract: The paper presents the first systematic study on the synthesis of nitrogen-rich nanoporous activated carbons by chitosan carbonization in the presence of a hard template (activator), i.e. Na{sub 2}CO{sub 3}. Carbonization process was carried out in the range of 600–900 °C under a flow of nitrogen. The effect of the addition of different volumes of activator and the temperature of carbonization on the development of specific surface area and pore structure (pore volume and median pore diameter) of the activated carbons was investigated. Additionally, the nitrogen content and nitrogen-containing surface species were determined by means of XPS and combustion elemental analysis. The nitrogen content was placed in the range of 2.4–13.1 wt.%. On the grounds of the low-temperature adsorption of nitrogen, it was found that obtained adsorption isotherms were of type-I, based on the IUPAC classification, which is typical for microporous materials.

  4. Processing Adipose-Rich Mohs Samples: A Comparative Study of Effectiveness of Pretreatment With Liquid Nitrogen Versus Flash Freezing Spray.

    Science.gov (United States)

    Reserva, Jeave; Kozel, Zachary; Krol, Cindy; Speiser, Jodi; Adams, William; Tung, Rebecca

    2017-11-01

    Processing of adipose-rich Mohs micrographic surgery (MMS) specimens poses challenges that may preclude complete margin evaluation. In this setting, the value of additional freezing methods using various cooling agents has not been previously investigated. The aim of this study is to compare the frozen section quality of high-adipose Mohs specimens processed without additional cooling treatments versus those pretreated with 1,1,1,2-tetrafluoroethane (TFE) or liquid nitrogen (LN2). A set of 3 sections were each taken from 24 adipose-rich Mohs micrographic surgery specimens. A section from each set was subjected to either no additional cooling treatment (control), two 10-second pulse sprays of 1,1,1,2-tetrafluoroethane, or three 2-second pulse sprays of LN2. After staining, 2 blinded raters evaluated slide quality based on the presence or absence of the following features: margin completeness, nuclear clearing, epidermal or adipose folding, holes, or venetian blind-like artifacts. Pretreatment of the sample with LN2 produced a significantly (P < 0.001) greater number of high-quality slides (19/24) compared to pretreatment with 1,1,1,2-tetrafluoroethane (1/24) and no additional treatment (0/24). The adjunctive use of LN2 spray before tissue embedding circumvents the challenges of processing "thick" (high-adipose) specimens and facilitates the production of high-quality frozen section slides during Mohs micrographic surgery.

  5. Ammonium transformation in a nitrogen-rich tidal freshwater marsh

    DEFF Research Database (Denmark)

    Gribsholt, B.; Andersson, M.; Boschker, H.T.S.

    2006-01-01

    The fate and transport of watershed-derived ammonium in a tidal freshwater marsh fringing the nutrient rich Scheldt River, Belgium, was quantified in a whole ecosystem 15N labeling experiment. In late summer (September) we added 15N-NH4+ to the flood water entering a 3477 m2 tidal freshwater marsh...

  6. Tailoring of silicon crystals for relativistic-particle channeling

    International Nuclear Information System (INIS)

    Guidi, V.; Antonini, A.; Baricordi, S.; Logallo, F.; Malagu, C.; Milan, E.; Ronzoni, A.; Stefancich, M.; Martinelli, G.; Vomiero, A.

    2005-01-01

    In the last years, the research on channeling of relativistic particles has progressed considerably. A significant contribution has been provided by the development of techniques for quality improvement of the crystals. In particular, a planar etching of the surfaces of the silicon crystals proved useful to remove the superficial layer, which is a region very rich in imperfections, in turn leading to greater channeling efficiency. Micro-fabrication techniques, borrowed from silicon technology, may also be useful: micro-indentation and deposition of tensile or compressive layers onto silicon samples allow one to impart an even curvature to the samples. In this way, different topologies may be envisaged, such as a bent crystal for deflection of protons and ions or an undulator to force coherent oscillations of positrons and electrons

  7. Formation of nanocrystals embedded in a silicon nitride film at a low temperature ({<=}200 deg. C)

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyoung-Min; Kim, Tae-Hwan [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of); Hong, Wan-Shick [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of)], E-mail: wshong@uos.ac.kr

    2008-12-15

    Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH{sub 4}, NH{sub 3} and H{sub 2} was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H{sub 2}/SiH{sub 4} mixture ratio that was higher than four.

  8. Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN x : role of chlorine in plasma enhanced chemical vapour deposition.

    Science.gov (United States)

    Mon-Pérez, E; Salazar, J; Ramos, E; Salazar, J Santoyo; Suárez, A López; Dutt, A; Santana, G; Monroy, B Marel

    2016-11-11

    Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from a technological and application point of view. Thus, being able to synthesize them in situ during the matrix growth process is technologically advantageous. The use of SiH 2 Cl 2 as the silicon precursor in the plasma enhanced chemical vapour deposition (PECVD) process allows us to obtain Si-QDs without post-thermal annealing. Foremost in this work, is a theoretical rationalization of the mechanism responsible for Si-QD generation in a film including an analysis of the energy released by the extraction of HCl and the insertion of silylene species into the terminal surface bonds. From the results obtained using density functional theory (DFT), we propose an explanation of the mechanism responsible for the formation of Si-QDs in non-stoichiometric SiN x starting from chlorinated precursors in a PECVD system. Micrograph images obtained through transmission electron microscopy confirmed the presence of Si-QDs, even in nitrogen-rich (N-rich) samples. The film stoichiometry was controlled by varying the growth parameters, in particular the NH 3 /SiH 2 Cl 2 ratio and hydrogen dilution. Experimental and theoretical results together show that using a PECVD system, along with chlorinated precursors it is possible to obtain Si-QDs at a low substrate temperature without annealing treatment. The optical property studies carried out in the present work highlight the prospects of these thin films for down shifting and as an antireflection coating in silicon solar cells.

  9. Electroluminescence efficiencies of erbium in silicon-based hosts

    Energy Technology Data Exchange (ETDEWEB)

    Cueff, Sébastien, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France); School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Manel Ramírez, Joan; Berencén, Yonder; Garrido, Blas [MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain); Kurvits, Jonathan A.; Zia, Rashid [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Rizk, Richard; Labbé, Christophe, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

    2013-11-04

    We report on room-temperature 1.5 μm electroluminescence from trivalent erbium (Er{sup 3+}) ions embedded in three different CMOS-compatible silicon-based hosts: SiO{sub 2}, Si{sub 3}N{sub 4}, and SiN{sub x}. We show that although the insertion of either nitrogen or excess silicon helps enhance electrical conduction and reduce the onset voltage for electroluminescence, it drastically decreases the external quantum efficiency of Er{sup 3+} ions from 2% in SiO{sub 2} to 0.001% and 0.0004% in SiN{sub x} and Si{sub 3}N{sub 4}, respectively. Furthermore, we present strong evidence that hot carrier injection is significantly more efficient than defect-assisted conduction for the electrical excitation of Er{sup 3+} ions. These results suggest strategies to optimize the engineering of on-chip electrically excited silicon-based nanophotonic light sources.

  10. Silicon Promotes Growth of Brassica napus L. and Delays Leaf Senescence Induced by Nitrogen Starvation

    Directory of Open Access Journals (Sweden)

    Cylia Haddad

    2018-04-01

    Full Text Available Silicon (Si is the second most abundant element in soil and has several beneficial effects, especially in plants subjected to stress conditions. However, the effect of Si in preventing nitrogen (N starvation in plants is poorly documented. The aim of this work was to study the effect of a short Si supply duration (7 days on growth, N uptake, photosynthetic activity, and leaf senescence progression in rapeseed subjected (or not to N starvation. Our results showed that after 1 week of Si supply, Si improves biomass and increases N uptake and root expression of a nitrate transporter gene. After 12 days of N starvation, compared to -Si plants, mature leaf from +Si plants showed a high chlorophyll content, a maintain of net photosynthetic activity, a decrease of oxidative stress markers [hydrogen peroxide (H2O2 and malondialdehyde (MDA] and a significant delay in senescence. When N-deprived plants were resupplied with N, a greening again associated with an increase of photosynthetic activity was observed in mature leaves of plants pretreated with Si. Moreover, during the duration of N resupply, an increase of N uptake and nitrate transporter gene expression were observed in plants pretreated with Si. In conclusion, this study has shown a beneficial role of Si to alleviate damage associated with N starvation and more especially its role in delaying of leaf senescence.

  11. The influence of silicate and sulphate anions on the anodic corrosion and the transpassivity of iron and silicon-rich steel in concentrated KOH solution

    International Nuclear Information System (INIS)

    Čekerevac, Milan; Simičić, Miloš; Bujanović, Ljiljana Nikolić; Popović, Negica

    2012-01-01

    Highlights: ► Anodic behaviour of Fe and steel in 10 M KOH with sulphate and silicate is examined. ► X-ray diffraction confirmed the formation of Fe 3 (Si 1.32 Fe 0.68 )O 5 (OH) 4 in anodic layer. ► X-ray diffraction confirmed the formation of Ba(Fe, S)O 4 at anodic oxidation. - Abstract: The effect of sulphate and silicate addition in a 10 M KOH electrolyte on the anodic corrosion and transpassivity of iron and steel rich in silicon are explored by cyclic and linear sweep voltammetry. Formation of ferrate(VI) in the iron transpassivity region is noticed in all explored electrolytes. The electrochemical sulphato- and silico-ferrate(VI) formation is discussed as a possible result of Fe 3 III (Si 1.32 Fe 0.68 )O 5 (OH) 4 and [Fe(II) 4 Fe(III) 2 (OH) 12 ]SO 4 oxidation in the 10 M KOH electrolytes with silicate and sulphate, respectively. The presence of Fe 3 (Si 1.32 Fe 0.68 )O 5 (OH) 4 in the anodic layer of silicon steel and the crystal structure of electrochemically synthesised Ba(Fe, S)O 4 have been revealed by XRD.

  12. Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition

    Science.gov (United States)

    Baba, K.; Hatada, R.; Emmerich, R.; Enders, B.; Wolf, G. K.

    1995-12-01

    Silicon nitride films SiN x were deposited on 316L austenitic stainless steel substrates by silicon evaporation and simultaneous nitrogen ion irradiation with an acceleration voltage of 2 kV. In order to study the influence of the nitrogen content on changes in stoichiometry, structure, morphology, thermal oxidation behaviour and corrosion behaviour, the atom to ion transport ratio was systematically varied. The changes of binding states and the stoichiometry were evaluated with XPS and AES analysis. A maximum nitrogen content was reached with a {Si}/{N} transport ratio lower than 2. The films are chemically inert when exposed to laboratory atmosphere up to a temperature of more than 1000°C. XRD and SEM measurements show amorphous and featureless films for transport ratios {Si}/{N} from 1 up to 10. The variation of the corrosion behaviour of coated stainless steel substrates in sulphuric acid and hydrochloric acid shows a minimum at medium transport ratios. This goes parallel with changes in porosity and adhesion. Additional investigations showed that titanium implantation as an intermediate step improves the corrosion resistance considerably.

  13. Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.L.; Luque, A.; Sopori, B.; Swanson, D.; Gee, J.; Kalejs, J.; Jastrzebski, L.; Tan, T.

    1995-08-01

    This workshop dealt with engineering aspects and material properties of silicon electronic devices. Crystalline silicon growth, modeling, and properties are discussed in general and as applied to solar cells. Topics considered in discussions of silicon growth include: casting, string ribbons, Al backside contacts, ion implantation, gettering, passivation, and ultrasound treatments. Properties studies include: Electronic properties of defects and impurities, dopant and carrier concentrations, structure and bonding, nitrogen effects, degradation of bulk diffusion length, and recombination parameters. Individual papers from the workshop are indexed separately on the Energy Data Bases.

  14. Computer simulation for the formation of the insulator layer of silicon-on-insulator devices by N sup + and O sup + Co-implantation

    CERN Document Server

    Lin Qing; Xie Xin Yun; Lin Chenglu; Liu Xiang Hua

    2002-01-01

    A buried sandwiched layer consisting of silicon dioxide (upper part), silicon oxynitride (medium part) and silicon nitride (lower part) is formed by N sup + and O sup + co-implantation in silicon wafers at a constant temperature of 550 degree C. The microstructure is performed by cross-sectional transmission electron microscopy. To predict the quality of the buried sandwiched layer, the authors study the computer simulation for the formation of the SIMON (separated by implantation of oxygen and nitrogen) structure. The simulation program for SIMOX (separated by implantation of oxygen) is improved in order to be applied in O sup + and N sup + co-implantation on the basis of different formation mechanism between SIMOX and SIMNI (separated by implantation of nitrogen) structures. There is a good agreement between experiment and simulation results verifying the theoretical model and presumption in the program

  15. Bacterial nitrogen fixation in sand bioreactors treating winery wastewater with a high carbon to nitrogen ratio.

    Science.gov (United States)

    Welz, Pamela J; Ramond, Jean-Baptiste; Braun, Lorenz; Vikram, Surendra; Le Roes-Hill, Marilize

    2018-02-01

    Heterotrophic bacteria proliferate in organic-rich environments and systems containing sufficient essential nutrients. Nitrogen, phosphorus and potassium are the nutrients required in the highest concentrations. The ratio of carbon to nitrogen is an important consideration for wastewater bioremediation because insufficient nitrogen may result in decreased treatment efficiency. It has been shown that during the treatment of effluent from the pulp and paper industry, bacterial nitrogen fixation can supplement the nitrogen requirements of suspended growth systems. This study was conducted using physicochemical analyses and culture-dependent and -independent techniques to ascertain whether nitrogen-fixing bacteria were selected in biological sand filters used to treat synthetic winery wastewater with a high carbon to nitrogen ratio (193:1). The systems performed well, with the influent COD of 1351 mg/L being reduced by 84-89%. It was shown that the nitrogen fixing bacterial population was influenced by the presence of synthetic winery effluent in the surface layers of the biological sand filters, but not in the deeper layers. It was hypothesised that this was due to the greater availability of atmospheric nitrogen at the surface. The numbers of culture-able nitrogen-fixing bacteria, including presumptive Azotobacter spp. exhibited 1-2 log increases at the surface. The results of this study confirm that nitrogen fixation is an important mechanism to be considered during treatment of high carbon to nitrogen wastewater. If biological treatment systems can be operated to stimulate this phenomenon, it may obviate the need for nitrogen addition. Copyright © 2017 Elsevier Ltd. All rights reserved.

  16. A novel microalgal system for energy production with nitrogen cycling

    Energy Technology Data Exchange (ETDEWEB)

    Minowa, T.; Sawayama, S. [National Institute for Resources and Environment, Tsukuba (Japan)

    1999-08-01

    A microalga, Chlorella vulgaris, could grow in the recovered solution from the low temperature catalytic gasification of itself, by which methane rich fuel gas was obtained. All nitrogen in the microalga was converted to ammonia during the gasification, and the recovered solution, in which ammonia was dissolved, could be used as nitrogen nutrient. The result of the energy evaluation indicated that the novel microalgal system for energy production with nitrogen cycling could be created. 9 refs., 3 tabs.

  17. Transformation of nitrogen and distribution of nitrogen-related bacteria in a polluted urban stream.

    Science.gov (United States)

    Jiao, Y; Jin, W B; Zhao, Q L; Zhang, G D; Yan, Y; Wan, J

    2009-01-01

    Most researchers focused on either nitrogen species or microbial community for polluted urban stream while ignoring the interaction between them and its effect on nitrogen transformation, which restricted the rational selection of an effective and feasible remediation technology. Taking Buji stream in Shenzhen (China) as target stream, the distribution of nitrogen-related bacteria was investigated by most probable number (MPN) besides analysis of nitrogen species etc. The nitrogen-related bacteria in sediment were 10(2) times richer than those in water. Owing to their faster growth, the MPN of ammonifying bacteria and denitrifying bacteria were 10(5) and 10(2) times higher than those of nitrifying bacteria, respectively. The ammonifying bacteria numbers were significantly related to BOD5 in water, while nitrifying bacteria in sediment correlated well with nitrate in water. Thus, nitrification occurred mainly in sediment surface and was limited by low proportion of nitrifying bacteria. The denitrifying bacteria in sediment had good relationship with BOD5 and nitrite and nitrate in water. Low DO and rich organic compounds were beneficial to denitrification but unfavourable to nitrification. Denitrification was restricted by low nitrite and nitrate concentration. These results could be served as a reference for implementing the remediation scheme of nitrogen polluted urban stream.

  18. On electronic structure of polymer-derived amorphous silicon carbide ceramics

    Science.gov (United States)

    Wang, Kewei; Li, Xuqin; Ma, Baisheng; Wang, Yiguang; Zhang, Ligong; An, Linan

    2014-06-01

    The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior.

  19. 15N abundance in Antarctica: origin of soil nitrogen and ecological implications

    International Nuclear Information System (INIS)

    Wada, E.; Shibata, R.; Torii, T

    1981-01-01

    The results of an investigation of the nitrogen cycle in Antartica are reported which show that nitrate in Antarctic soils is extremely depleted in 15 N compared with biogenic nitrogen and that algae collected from a nitrate-rich saline pond and from a penguin rookery exhibit, respectively, the lowest and the highest 15 N/ 14 N ratios among terrestrial biogenic nitrogen so far observed. The possible causes of these extreme nitrogen isotopic compositions are discussed. (U.K.)

  20. Characterization of Ag-porous silicon nanostructured layer formed by an electrochemical etching of p-type silicon surface for bio-application

    Science.gov (United States)

    Naddaf, M.; Al-Mariri, A.; Haj-Mhmoud, N.

    2017-06-01

    Nanostructured layers composed of silver-porous silicon (Ag-PS) have been formed by an electrochemical etching of p-type (1 1 1) silicon substrate in a AgNO3:HF:C2H5OH solution at different etching times (10 min-30 min). Scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) results reveal that the produced layers consist of Ag dendrites and a silicon-rich porous structure. The nanostructuring nature of the layer has been confirmed by spatial micro-Raman scattering and x-ray diffraction techniques. The Ag dendrites exhibit a surface-enhanced Raman scattering (SERS) spectrum, while the porous structure shows a typical PS Raman spectrum. Upon increasing the etching time, the average size of silicon nanocrystallite in the PS network decreases, while the average size of Ag nanocrystals is slightly affected. In addition, the immobilization of prokaryote Salmonella typhimurium DNA via physical adsorption onto the Ag-PS layer has been performed to demonstrate its efficiency as a platform for detection of biological molecules using SERS.

  1. The behavior of silicon and boron in the surface of corroded nuclear waste glasses: an EFTEM study

    International Nuclear Information System (INIS)

    Buck, E. C.; Smith, K. L.; Blackford, M. G.

    1999-01-01

    Using electron energy-loss filtered transmission electron microscopy (EFTEM), we have observed the formation of silicon-rich zones on the corroded surface of a West Valley (WV6) glass. This layer is approximately 100-200 nm thick and is directly underneath a precipitated smectite clay layer. Under conventional (C)TEM illumination, this layer is invisible; indeed, more commonly used analytical techniques, such as x-ray energy dispersive spectroscopy (EDS), have failed to describe fully the localized changes in the boron and silicon contents across this region. Similar silicon-rich and boron-depleted zones were not found on corroded Savannah River Laboratory (SRL) borosilicate glasses, including SRL-EA and SRL-51, although they possessed similar-looking clay layers. This study demonstrates a new tool for examining the corroded surfaces of materials

  2. Nitrogen in rock: Occurrences and biogeochemical implications

    Science.gov (United States)

    Holloway, J.M.; Dahlgren, R.A.

    2002-01-01

    There is a growing interest in the role of bedrock in global nitrogen cycling and potential for increased ecosystem sensitivity to human impacts in terrains with elevated background nitrogen concentrations. Nitrogen-bearing rocks are globally distributed and comprise a potentially large pool of nitrogen in nutrient cycling that is frequently neglected because of a lack of routine analytical methods for quantification. Nitrogen in rock originates as organically bound nitrogen associated with sediment, or in thermal waters representing a mixture of sedimentary, mantle, and meteoric sources of nitrogen. Rock nitrogen concentrations range from trace levels (>200 mg N kg -1) in granites to ecologically significant concentrations exceeding 1000 mg N kg -1 in some sedimentary and metasedimentary rocks. Nitrate deposits accumulated in arid and semi-arid regions are also a large potential pool. Nitrogen in rock has a potentially significant impact on localized nitrogen cycles. Elevated nitrogen concentrations in water and soil have been attributed to weathering of bedrock nitrogen. In some environments, nitrogen released from bedrock may contribute to nitrogen saturation of terrestrial ecosystems (more nitrogen available than required by biota). Nitrogen saturation results in leaching of nitrate to surface and groundwaters, and, where soils are formed from ammonium-rich bedrock, the oxidation of ammonium to nitrate may result in soil acidification, inhibiting revegetation in certain ecosystems. Collectively, studies presented in this article reveal that geologic nitrogen may be a large and reactive pool with potential for amplification of human impacts on nitrogen cycling in terrestrial and aquatic ecosystems.

  3. Leaf and soil nitrogen and phosphorus availability in a neotropical rain forest of nutrient-rich soil

    Directory of Open Access Journals (Sweden)

    José Luis Martínez-Sánchez

    2006-06-01

    Full Text Available The nitrogen and phosphorus supply in a lowland rain forest with a nutrient-rich soil was investigated by means of the leaf N/P quotient. It was hypothesised a high N and P supply to the forest ecosystem with a N and P rich soil. Total N and extractable P were determined in the surface (10 cm soil of three plots of the forest. Total N was analysed by the Kjeldahl method, and P was extracted with HCl and NH4F. The leaf N/P quotient was evaluated from the senesced leaves of 11 dominant tree species from the mature forest. Samples of 5 g of freshly fallen leaves were collected from three trees of each species. Nitrogen was analysed by microkjeldahl digestion with sulphuric acid and distilled with boric acid, and phosphorus was analysed by digestion with nitric acid and perchloric acid, and determined by photometry. Concentrations of total N (0.50%, n = 30 and extractable P (4.11 μg g-1, n = 30 in the soil were high. As expected, P supply was sufficient, but contrary to expected, N supply was low (N/P = 11.8, n = 11. Rev. Biol. Trop. 54(2: 357-361. Epub 2006 Jun 01.A través del cociente foliar N/P, se investigó la disponibilidad de nitrógeno y fósforo en una selva húmeda tropical con suelo fértil. Como hipótesis se esperaba encontrar una alta disponibilidad de N y P en el ecosistema debido a un suelo rico en N y P. Se determinó el N total y el P extraible en el suelo superficial (10 cm en tres sitios de la selva. El N total se analizó por el método Kjeldahl y el P por extracción con HCl y NH4F. El cociente foliar N/P se evaluó a partir de hojas seniles de 11 especies arbóreas dominantes de la selva madura. Se recolectaron muestras de 5 g de hojas recién caídas de tres árboles de cada especie. El nitrógeno se analizó por digestión microkjeldahl con ácido sulfúrico y destilación con ácido bórico, y el fósforo por digestión con ácido nítrico y ácido perclórico, y determinación con fotometría. Las concetraciones de N

  4. Sustainable development in an N-rich/n-poor world.

    Science.gov (United States)

    Perrings, Charles; Kinzig, Ann; Halkos, George

    2014-11-01

    Sustainable development requires that per capita inclusive wealth-produced, human, and natural capital-does not decline over time. We investigate the impact of changes in nitrogen on inclusive wealth. There are two sides to the nitrogen problem. Excess use of nitrogen in some places gives rise to N-pollution, which can cause environmental damage. Insufficient replacement of nitrogen in other places gives rise to N-depletion, or loss of nutrient stocks. Neither is explicitly accounted for in current wealth measures, but both affect wealth. We calculate an index of net N-replacement, and investigate its relationship to wealth. In countries with low levels of relative N-loss, we find that the uncompensated loss of soil nitrogen in poorer countries is associated with declining rates of growth of inclusive per capita wealth. What is less intuitive is that increasing fertilizer application in both rich and poor countries can increase per capita inclusive wealth.

  5. Clathrates and beyond: Low-density allotropy in crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Beekman, Matt [Department of Physics, California Polytechnic State University, San Luis Obispo, California 93407 (United States); Wei, Kaya; Nolas, George S., E-mail: gnolas@usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States)

    2016-12-15

    In its common, thermodynamically stable state, silicon adopts the same crystal structure as diamond. Although only a few alternative allotropic structures have been discovered and studied over the past six decades, advanced methods for structure prediction have recently suggested a remarkably rich low-density phase space that has only begun to be explored. The electronic properties of these low-density allotropes of silicon, predicted by first-principles calculations, indicate that these materials could offer a pathway to improving performance and reducing cost in a variety of electronic and energy-related applications. In this focus review, we provide an introduction and overview of recent theoretical and experimental results related to low-density allotropes of silicon, highlighting the significant potential these materials may have for technological applications, provided substantial challenges to their experimental preparation can be overcome.

  6. Impacts of delayed addition of N-rich and acidic substrates on nitrogen loss and compost quality during pig manure composting.

    Science.gov (United States)

    Jiang, Jishao; Kang, Kang; Chen, Dan; Liu, Ningning

    2018-02-01

    Delayed addition of Nitrogen (N)-rich and acidic substrates was investigated to evaluate its effects on N loss and compost quality during the composting process. Three different delayed adding methods of N-rich (pig manure) and acidic substrates (phosphate fertilizer and rotten apples) were tested during the pig manure and wheat straw is composting. The results showed that delayed addition of pig manure and acidic materials led two temperature peaks, and the durations of two separate thermophilic phase were closely related to the amount of pig manure. Delayed addition reduced total N loss by up to 14% when using superphosphate as acidic substrates, and by up to 12% when using rotten apples as acidic substrates, which is mainly due to the decreased NH 3 emissions. At the end of composting, delayed the addition of pig manure caused a significant increase in the HS (humus substance) content, and the highest HS content was observed when 70% of the pig manure was applied at day 0 and the remaining 30% was applied on day 27. In the final compost, the GI in all treatments almost reached the maturity requirement by exceeding 80%. The results suggest that delayed addition of animal manure and acidic substrates could prevent the N loss during composting and improve the compost quality. Copyright © 2017 Elsevier Ltd. All rights reserved.

  7. Formation of aluminium nitride and segregation of Cu impurity atoms in aluminium implanted by high dose nitrogen ions

    International Nuclear Information System (INIS)

    Lin Chenglu; Hemment, P.L.F.; Li Jinhua; Zou Shichang

    1994-01-01

    Aluminium films with a thickness of 7000 A (containing 0.85% copper) were deposited on silicon substrates. 400 keV N 2 + or 350 keV N + ions were implanted into the aluminium films or at the interface between the aluminium and silicon, respectively. Automatic spreading resistance (ASR), Fourier transform infrared spectroscopy (FTIR) and Rutherford backscattering (RBS) and channelling were used to characterize the formation of aluminium nitride and the depth distribution of the Cu impurity in the aluminium films after ion implantation and post-annealing. The formation of a stoichiometric AlN layer with high resistance was evident from ASR, RBS analysis and FTIR measurements by the presence of the absorption band at 650 cm -1 . When the implanted nitrogen is near the interface between the aluminium and silicon, a multilayer structure can be obtained, which consists of aluminium, aluminium nitride and the silicon substrate. Cu, which is a background impurity in the deposited aluminium films, segregated into the synthesised aluminium nitride during high dose nitrogen ion implantation. This is due to irradiation-induced segregation during ion implantation. (orig.)

  8. Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

    Directory of Open Access Journals (Sweden)

    Sebastian Gutsch

    2015-04-01

    Full Text Available We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

  9. Electro-optical properties of dislocations in silicon and their possible application for light emitters

    Energy Technology Data Exchange (ETDEWEB)

    Arguirov, Tzanimir Vladimirov

    2007-10-14

    This thesis addresses the electro-optical properties of silicon, containing dislocations. The work demonstrates that dislocation specific radiation may provide a means for optical diagnostics of solar cell grade silicon. It provides insight into the mechanisms governing the dislocation recombination activity, their radiation, and how are they influenced by other defects present in silicon. We demonstrate that photoluminescence mapping is useful for monitoring the recombination activity in solar cell grade silicon and can be applied for identification of contaminants, based on their photoluminescence signatures. It is shown that the recombination at dislocations is strongly influenced by the presence of metals at the dislocation sites. The dislocation radiation activity correlates with their electrical activity. It is shown that the dislocation and band-to-band luminescence are essentially anti-correlated. {beta}FeSi{sub 2} precipitates, with a luminescence at 0.8 eV, were detected within the grains of block cast materials. They exhibit a characteristic feature of quantum dots, namely blinking. The second aspect of the thesis concerns the topic of silicon based light emitters for on-chip optical interconnects. The goal is an enhancement of sub-band-gap or band-to-band radiation by controlled formation of dislocation-rich areas in microelectronics-grade silicon as well as understanding of the processes governing such enhancement. For light emitters based on band-to-band emission it is shown, that internal quantum efficiency of nearly 2 % can be achieved, but the emission is essentially generated in the bulk of the wafer. On the other hand, light emitters utilizing the emission from dislocation-rich areas of a well localized wafer depth were explored. Three different methods for reproducible formation of a dislocation-rich region beneath the wafer surface were investigated and evaluated in view of their room temperature sub-band-gap radiation: (1) silicon implantation

  10. Tunnel Oxides Formed by Field-Induced Anodisation for Passivated Contacts of Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Jingnan Tong

    2018-02-01

    Full Text Available Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, to ensure uniform and low recombination velocities if high conversion efficiencies are to be achieved. This paper reports on the formation of ultra-thin silicon oxide layers by field-induced anodisation (FIA, a process that ensures uniform oxide thickness by passing the anodisation current perpendicularly through the wafer to the silicon surface that is anodised. Spectroscopical analyses show that the FIA oxides contain a lower fraction of Si-rich sub-oxides compared to wet-chemical oxides, resulting in lower recombination velocities at the silicon and oxide interface. This property along with its low temperature formation highlights the potential for FIA to be used to form low-cost tunnel oxide layers for passivated contacts of silicon solar cells.

  11. Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

    International Nuclear Information System (INIS)

    Valizadeh, R.; Colligon, J.S.; Katardiev, I.V.; Faunce, C.A.; Donnelly, S.E.

    1998-01-01

    Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm -2 and 2 GeV xenon ion with a dose of 1E12 ions.cm -2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C 3 N 4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C 3 N 4 matrix was predominantly sp 2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

  12. Influence of LiBr on photoluminescence properties of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dimassi, W., E-mail: dimassi_inrst@yahoo.f [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95 Hammam-Lif 2050 (Tunisia); Haddadi, I.; Bousbih, R.; Slama, S.; Ali Kanzari, M.; Bouaicha, M.; Ezzaouia, H. [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95 Hammam-Lif 2050 (Tunisia)

    2011-05-15

    A new method has been developed to improve the photoluminescence intensity of porous silicon (PS), which is first time that LiBr is used for passivation of PS. Immersion of the PS in a LiBr solution, followed by a thermal treatment at 100 {sup o}C for 30 min under nitrogen, leads to a nine fold increase in the intensity of the photoluminescence. The atomic force microscope (AFM) shows an increase of the nanoparticle dimension compared to the initial dimension of the PS nanostructure. The LiBr covers the nanoparticles of silicon without changing the wavelength distribution of the optical excitation and emission spectra. Moreover, a significant decrease of reflectivity was observed for the wavelength in the range of 350-500 nm. - Research highlights: {yields} A new method based on the use of LiBr was developed to enhance nine times the photoluminescence of porous silicon. {yields} The LiBr covers the silicon nanoparticles without changing in the optical excitation and emission spectra. {yields} We observed a significant decrease of the reflectivity in the 350-500 nm spectral range.

  13. Influence of LiBr on photoluminescence properties of porous silicon

    International Nuclear Information System (INIS)

    Dimassi, W.; Haddadi, I.; Bousbih, R.; Slama, S.; Ali Kanzari, M.; Bouaicha, M.; Ezzaouia, H.

    2011-01-01

    A new method has been developed to improve the photoluminescence intensity of porous silicon (PS), which is first time that LiBr is used for passivation of PS. Immersion of the PS in a LiBr solution, followed by a thermal treatment at 100 o C for 30 min under nitrogen, leads to a nine fold increase in the intensity of the photoluminescence. The atomic force microscope (AFM) shows an increase of the nanoparticle dimension compared to the initial dimension of the PS nanostructure. The LiBr covers the nanoparticles of silicon without changing the wavelength distribution of the optical excitation and emission spectra. Moreover, a significant decrease of reflectivity was observed for the wavelength in the range of 350-500 nm. - Research highlights: → A new method based on the use of LiBr was developed to enhance nine times the photoluminescence of porous silicon. → The LiBr covers the silicon nanoparticles without changing in the optical excitation and emission spectra. → We observed a significant decrease of the reflectivity in the 350-500 nm spectral range.

  14. Towards neuromorphic electronics: Memristors on foldable silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-11-01

    The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex\\'s folded pattern for ultra-compact design.

  15. Buried melting in germanium implanted silicon by millisecond flash lamp annealing

    International Nuclear Information System (INIS)

    Voelskow, Matthias; Yankov, Rossen; Skorupa, Wolfgang; Pezoldt, Joerg; Kups, Thomas

    2008-01-01

    Flash lamp annealing in the millisecond range has been used to induce buried melting in silicon. For this purpose high dose high-energy germanium implantation has been employed to lower the melting temperature of silicon in a predetermined depth region. Subsequent flash lamp treatment at high energy densities leads to local melting of the germanium rich layer. The thickness of the molten layer has been found to depend on the irradiation energy density. During the cool-down period, epitaxial crystallization takes place resulting in a largely defect-free layer

  16. Hydrogen concentration profiles and chemical bonding in silicon nitride

    International Nuclear Information System (INIS)

    Peercy, P.S.; Stein, H.J.; Doyle, B.L.; Picraux, S.T.

    1978-01-01

    The complementary technique of nuclear reaction analysis and infrared absorption were used to study the concentration profile and chemical bonding of hydrogen in silicon nitride for different preparation and annealing conditions. Silicon nitride prepared by chemical vapor deposition from ammonia-silane mixtures is shown to have hydrogen concentrations of 8.1 and 6.5 at.% for deposition temperatures of 750 and 900 0 C, respectively. Plasma deposition at 300 0 C from these gases results in hydrogen concentrations of approximately 22 at.%. Comparison of nuclear reaction analysis and infrared absorption measurements after isothermal annealing shows that all of the hydrogen retained in the films remains bonded to either silicon or nitrogen and that hydrogen release from the material on annealing is governed by various trap energies involving at least two N-H and one Si-H trap. Reasonable estimates of the hydrogen release rates can be made from the effective diffusion coefficient obtained from measurements of hydrogen migration in hydrogen implanted and annealed films

  17. Deposition and surface characterization of nanoparticles of zinc oxide using dense plasma focus device in nitrogen atmosphere

    International Nuclear Information System (INIS)

    Malhotra, Yashi; Srivastava, M P; Roy, Savita

    2010-01-01

    Nanoparticles of zinc oxide from zinc oxide pellets in the nitrogen plasma atmosphere are deposited on n and p type silicon substrates using Dense Plasma Focus device. The hot and dense nitrogen plasma formed during the focus phase ionizes the ZnO pellet, which then move upward in a fountain like shape and gets deposited on substrates which are placed above the top of the anode. Structural and surface properties of the deposited ZnO are investigated using X-ray diffraction and Atomic force microscope (AFM). X-ray spectra shows the diffraction plane (002) of ZnO nanoparticles deposited on Si with few shots in nitrogen atmosphere. AFM investigations revealed that there are nanoparticles of size between 15-80 nm on n-Si and p-Si substrates. The deposition on n-type Si is better than the p-type Si can be seen from AFM images, this may be due to different orientation of silicon.

  18. Optically induced paramagnetism in amorphous hydrogenated silicon nitride thin films

    International Nuclear Information System (INIS)

    Warren, W.L.; Kanicki, J.; Buchwald, W.R.; Rong, F.C.; Harmatz, M.

    1992-01-01

    This paper reports that the creation mechanisms of Si and N dangling bond defect centers in amorphous hydrogenated silicon nitride thin films by ultra-violet (UV) illumination are investigated. The creation efficiency and density of Si centers in the N-rich films are independent of illumination temperature, strongly suggesting that the creation mechanism of the spins in electronic in nature, i.e., a charge transfer mechanism. However, our results suggest that the creation of the Si dangling bond in the Si-rich films are different. Last, we find that the creation of the N dangling-bond in N-rich films can be fit to a stretched exponential time dependence, which is characteristic of dispersive charge transport

  19. Planar silicon sensors for the CMS Tracker upgrade

    CERN Document Server

    Junkes, Alexandra

    2013-01-01

    The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfills all requirements for detectors for the high-luminosity phase of the Large Hadron Collider (HL-LHC).A variety of silicon p-in-n and n-in-p test-sensors made from Float Zone, Deep-Diffused FZ and Magnetic Czochralski materials were manufactured by one single industrial producer, thus guaranteeing similar conditions for the production and design of the test-structures. Properties of different silicon materials and design choices have been systematically studied and compared.The samples have been irradiated with 1 MeV neutrons and protons corresponding to maximal fluences as expected for the positions of detector layers in the future tracker. Irradiations with protons of different energies (23 MeV and 23 GeV) have been performed to evaluate the energy dependence of the defect generation in oxygen rich material. All materials have been characterized before an...

  20. Characterization of Al2O3 surface passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Albadri, Abdulrahman M.

    2014-01-01

    A study of the passivation of silicon surface by aluminum oxide (Al 2 O 3 ) is reported. A correlation of fixed oxide charge density (Q f ) and interface trap density (D it ) on passivation efficiency is presented. Low surface recombination velocity (SRV) was obtained even by as-deposited Al 2 O 3 films and this was found to be associated to the passivation of interface states. Fourier transfer infrared spectroscopy spectra show the existence of an interfacial silicon oxide thin layer in both as-deposited and annealed Al 2 O 3 films. Q f is found positive in as-deposited films and changing to negative upon subsequent annealing, providing thus an enhancement of the passivation in p-type silicon wafers, associated to field effects. Secondary ion mass spectrometry analysis confirms the correlation between D it and hydrogen concentration at the Al 2 O 3 /Si interface. A lowest SRV of 15 cm/s was obtained after an anneal at 400 °C in nitrogen atmosphere. - Highlights: • Al 2 O 3 provides superior passivation for silicon surfaces. • Atomic layer deposition-Al 2 O 3 was deposited at a low temperature of 200 °C. • A lowest surface passivation velocity of 15 cm/s was obtained after an anneal at 400 °C in nitrogen. • As-deposited Al 2 O 3 films form very thin SiO 2 layer responsible of low interface trap densities. • High negative fixed charge density of (− 2 × 10 12 cm −2 ) was achieved upon annealing at 400 °C

  1. Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

    International Nuclear Information System (INIS)

    Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

    2008-01-01

    We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 10 18 cm −3 was observed with ideal trap distributions for the same sample by capacitance–voltage (C–V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device

  2. Recent Optical and SEM Characterization of Genesis Solar Wind Concentrator Diamond on Silicon Collector

    Science.gov (United States)

    Allton, Judith H.; Rodriquez, M. C.; Burkett, P. J.; Ross, D. K.; Gonzalez, C. P.; McNamara, K. M.

    2013-01-01

    One of the 4 Genesis solar wind concentrator collectors was a silicon substrate coated with diamond-like carbon (DLC) in which to capture solar wind. This material was designed for analysis of solar nitrogen and noble gases [1, 2]. This particular collector fractured during landing, but about 80% of the surface was recovered, including a large piece which was subdivided in 2012 [3, 4, 5]. The optical and SEM imaging and analysis described below supports the subdivision and allocation of the diamond-on-silicon (DOS) concentrator collector.

  3. Methane, Ethane, and Nitrogen Stability on Titan

    Science.gov (United States)

    Hanley, J.; Grundy, W. M.; Thompson, G.; Dustrud, S.; Pearce, L.; Lindberg, G.; Roe, H. G.; Tegler, S.

    2017-12-01

    Many outer solar system bodies are likely to have a combination of methane, ethane and nitrogen. In particular the lakes of Titan are known to consist of these species. Understanding the past and current stability of these lakes requires characterizing the interactions of methane and ethane, along with nitrogen, as both liquids and ices. Our cryogenic laboratory setup allows us to explore ices down to 30 K through imaging, and transmission and Raman spectroscopy. Our recent work has shown that although methane and ethane have similar freezing points, when mixed they can remain liquid down to 72 K. Concurrently with the freezing point measurements we acquire transmission or Raman spectra of these mixtures to understand how the structural features change with concentration and temperature. Any mixing of these two species together will depress the freezing point of the lake below Titan's surface temperature, preventing them from freezing. We will present new results utilizing our recently acquired Raman spectrometer that allow us to explore both the liquid and solid phases of the ternary system of methane, ethane and nitrogen. In particular we will explore the effect of nitrogen on the eutectic of the methane-ethane system. At high pressure we find that the ternary creates two separate liquid phases. Through spectroscopy we determined the bottom layer to be nitrogen rich, and the top layer to be ethane rich. Identifying the eutectic, as well as understanding the liquidus and solidus points of combinations of these species, has implications for not only the lakes on the surface of Titan, but also for the evaporation/condensation/cloud cycle in the atmosphere, as well as the stability of these species on other outer solar system bodies. These results will help interpretation of future observational data, and guide current theoretical models.

  4. System tests of the LHCb RICH detectors in a charged particle beam

    CERN Document Server

    Skottowe, Hugh

    2009-01-01

    The RICH detectors of the LHCb experiment will provide efficient particle identification over the momentum range 1-100 GeV=c. Results are presented from a beam test of the LHCb RICH system using final production pixel Hybrid Photon Detectors, the final readout electronics and an adapted version of LHCb RICH reconstruction software. Measurements of the photon yields and Cherenkov angle resolutions for both nitrogen and C4F10 radiators agree well with full simulations. The quality of the data and the results obtained demonstrate that all aspects meet the stringent physics requirements of the experiment are now ready for first data.

  5. Fabrication of flexible hierarchical porous nitrogen-doped carbon nanofiber films for application in binder-free supercapacitors

    International Nuclear Information System (INIS)

    Huang, Kaibing; Yao, Yiyuan; Yang, Xiuwen; Chen, Zhenhua; Li, Min

    2016-01-01

    Hierarchical porous nitrogen-doped carbon nanofiber (HPNCNF) films were prepared via a simple electrospinning process, in which polyacrylonitrile and silicone surfactants were adopted as carbon source and porogen, respectively, followed by a thermal treatment. The morphology, chemical composition, and porosity of the HPNCNFs were investigated by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and nitrogen adsorption–desorption experiments. The as-prepared HPNCNFs with a specific surface area of 656 m"2 g"−"1, a hierarchical pore structure, and a nitrogen content of 8.1 at% showed a specific capacitance of 289 F g"−"1 in a 6 mol L"−"1 KOH aqueous solution with excellent cycle durability, making HPNCNF films a promising electrode material for a future application in supercapacitors. - Highlights: • HPNCNF films are prepared by electrospinning followed by thermal treatment. • Silicone surfactants are adopted as porogen to prepare HPNCNF films. • The HPNCNF films show a specific capacitance of 289 F g"−"1 at a current density of 0.2 A g"−"1.

  6. High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

    Science.gov (United States)

    Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

    2018-02-01

    In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

  7. Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

    Science.gov (United States)

    Baumgartner, H. R.

    1978-01-01

    Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

  8. Modeling Aquatic Macroinvertebrate Richness Using Landscape Attributes

    Directory of Open Access Journals (Sweden)

    Marcia S. Meixler

    2015-01-01

    Full Text Available We used a rapid, repeatable, and inexpensive geographic information system (GIS approach to predict aquatic macroinvertebrate family richness using the landscape attributes stream gradient, riparian forest cover, and water quality. Stream segments in the Allegheny River basin were classified into eight habitat classes using these three landscape attributes. Biological databases linking macroinvertebrate families with habitat classes were developed using life habits, feeding guilds, and water quality preferences and tolerances for each family. The biological databases provided a link between fauna and habitat enabling estimation of family composition in each habitat class and hence richness predictions for each stream segment. No difference was detected between field collected and modeled predictions of macroinvertebrate families in a paired t-test. Further, predicted stream gradient, riparian forest cover, and total phosphorus, total nitrogen, and suspended sediment classifications matched observed classifications much more often than by chance alone. High gradient streams with forested riparian zones and good water quality were predicted to have the greatest macroinvertebrate family richness and changes in water quality were predicted to have the greatest impact on richness. Our findings indicate that our model can provide meaningful landscape scale macroinvertebrate family richness predictions from widely available data for use in focusing conservation planning efforts.

  9. SAR11 bacteria linked to ocean anoxia and nitrogen loss

    DEFF Research Database (Denmark)

    Tsementzi, Despina; Wu, Jieying; Deutsch, Samuel

    2016-01-01

    Bacteria of the SAR11 clade constitute up to one half of all microbial cells in the oxygen-rich surface ocean. SAR11 bacteria are also abundant in oxygen minimum zones (OMZs), where oxygen falls below detection and anaerobic microbes have vital roles in converting bioavailable nitrogen to N2 gas...... activity. These results link SAR11 to pathways of ocean nitrogen loss, redefining the ecological niche of Earth’s most abundant organismal group....

  10. The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

    International Nuclear Information System (INIS)

    Mitchell, D.R.G.; Stott, F.H.

    1992-01-01

    A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

  11. Nitrogen fixation in denitrified marine waters.

    Directory of Open Access Journals (Sweden)

    Camila Fernandez

    Full Text Available Nitrogen fixation is an essential process that biologically transforms atmospheric dinitrogen gas to ammonia, therefore compensating for nitrogen losses occurring via denitrification and anammox. Currently, inputs and losses of nitrogen to the ocean resulting from these processes are thought to be spatially separated: nitrogen fixation takes place primarily in open ocean environments (mainly through diazotrophic cyanobacteria, whereas nitrogen losses occur in oxygen-depleted intermediate waters and sediments (mostly via denitrifying and anammox bacteria. Here we report on rates of nitrogen fixation obtained during two oceanographic cruises in 2005 and 2007 in the eastern tropical South Pacific (ETSP, a region characterized by the presence of coastal upwelling and a major permanent oxygen minimum zone (OMZ. Our results show significant rates of nitrogen fixation in the water column; however, integrated rates from the surface down to 120 m varied by ∼30 fold between cruises (7.5±4.6 versus 190±82.3 µmol m(-2 d(-1. Moreover, rates were measured down to 400 m depth in 2007, indicating that the contribution to the integrated rates of the subsurface oxygen-deficient layer was ∼5 times higher (574±294 µmol m(-2 d(-1 than the oxic euphotic layer (48±68 µmol m(-2 d(-1. Concurrent molecular measurements detected the dinitrogenase reductase gene nifH in surface and subsurface waters. Phylogenetic analysis of the nifH sequences showed the presence of a diverse diazotrophic community at the time of the highest measured nitrogen fixation rates. Our results thus demonstrate the occurrence of nitrogen fixation in nutrient-rich coastal upwelling systems and, importantly, within the underlying OMZ. They also suggest that nitrogen fixation is a widespread process that can sporadically provide a supplementary source of fixed nitrogen in these regions.

  12. Nitrogen Fixation in Denitrified Marine Waters

    Science.gov (United States)

    Fernandez, Camila; Farías, Laura; Ulloa, Osvaldo

    2011-01-01

    Nitrogen fixation is an essential process that biologically transforms atmospheric dinitrogen gas to ammonia, therefore compensating for nitrogen losses occurring via denitrification and anammox. Currently, inputs and losses of nitrogen to the ocean resulting from these processes are thought to be spatially separated: nitrogen fixation takes place primarily in open ocean environments (mainly through diazotrophic cyanobacteria), whereas nitrogen losses occur in oxygen-depleted intermediate waters and sediments (mostly via denitrifying and anammox bacteria). Here we report on rates of nitrogen fixation obtained during two oceanographic cruises in 2005 and 2007 in the eastern tropical South Pacific (ETSP), a region characterized by the presence of coastal upwelling and a major permanent oxygen minimum zone (OMZ). Our results show significant rates of nitrogen fixation in the water column; however, integrated rates from the surface down to 120 m varied by ∼30 fold between cruises (7.5±4.6 versus 190±82.3 µmol m−2 d−1). Moreover, rates were measured down to 400 m depth in 2007, indicating that the contribution to the integrated rates of the subsurface oxygen-deficient layer was ∼5 times higher (574±294 µmol m−2 d−1) than the oxic euphotic layer (48±68 µmol m−2 d−1). Concurrent molecular measurements detected the dinitrogenase reductase gene nifH in surface and subsurface waters. Phylogenetic analysis of the nifH sequences showed the presence of a diverse diazotrophic community at the time of the highest measured nitrogen fixation rates. Our results thus demonstrate the occurrence of nitrogen fixation in nutrient-rich coastal upwelling systems and, importantly, within the underlying OMZ. They also suggest that nitrogen fixation is a widespread process that can sporadically provide a supplementary source of fixed nitrogen in these regions. PMID:21687726

  13. Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

    Science.gov (United States)

    Bhatt, R. T.; Palczer, A. R.

    1998-01-01

    Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

  14. Controlled localised melting in silicon by high dose germanium implantation and flash lamp annealing

    International Nuclear Information System (INIS)

    Voelskow, Matthias; Skorupa, Wolfgang; Pezoldt, Joerg; Kups, Thomas

    2009-01-01

    High intensity light pulse irradiation of monocrystalline silicon wafers is usually accompanied by inhomogeneous surface melting. The aim of the present work is to induce homogeneous buried melting in silicon by germanium implantation and subsequent flash lamp annealing. For this purpose high dose, high energy germanium implantation has been employed to lower the melting temperature of silicon in a predetermined depth region. Subsequent flash lamp irradiation at high energy densities leads to local melting of the germanium rich buried layer, whereby the thickness of the molten layer depends on the irradiation energy density. During the cooling down epitaxial crystallization takes place resulting in a largely defect-free layer. The combination of buried melting and dopant segregation has the potential to produce unusually buried doping profiles or to create strained silicon structures.

  15. A Mechanistic Investigation of Nitrogen Evolution and Corrosion with Oxy-Combustion

    Energy Technology Data Exchange (ETDEWEB)

    Dale Tree; Andrew Mackrory; Thomas Fletcher

    2008-12-31

    A premixed, staged, down-fired, pulverized coal reactor and a flat flame burner were used to study the evolution of nitrogen in coal contrasting differences in air and oxy-combustion. In the premixed reactor, the oxidizer was staged to produce a fuel rich zone followed by a burnout zone. The initial nominal fuel rich zone stoichiometric ratio (S.R.) of 0.85 selected produced higher NO reductions in the fuel rich region under oxy-combustion conditions. Air was found to be capable of similar NO reductions when the fuel rich zone was at a much lower S.R. of 0.65. At a S.R. of 0.85, oxy-combustion was measured to have higher CO, unburned hydrocarbons, HCN and NH{sub 3} in the fuel rich region than air at the same S.R. There was no measured difference in the initial formation of NO. The data suggest devolatilization and initial NO formation is similar for the two oxidizers when flame temperatures are the same, but the higher CO{sub 2} leads to higher concentrations of CO and nitrogen reducing intermediates at a given equivalence ratio which increases the ability of the gas phase to reduce NO. These results are supported by flat flame burner experiments which show devolatilization of nitrogen from the coal and char to be similar for air and oxy-flame conditions at a given temperature. A model of premixed combustion containing devolatilization, char oxidation and detailed kinetics captures most of the trends seen in the data. The model suggests CO is high in oxy-combustion because of dissociation of CO{sub 2}. The model also predicts a fraction (up to 20%, dependent on S.R.) of NO in air combustion can be formed via thermal processes with the source being nitrogen from the air while in oxy-combustion equilibrium drives a reduction in NO of similar magnitude. The data confirm oxy-combustion is a superior oxidizer to air for NO control because NO reduction can be achieved at higher S.R. producing better char burnout in addition to NO from recirculated flue gas being reduced

  16. Total dose hardening of buried insulator in implanted silicon-on-insulator structures

    International Nuclear Information System (INIS)

    Mao, B.Y.; Chen, C.E.; Pollack, G.; Hughes, H.L.; Davis, G.E.

    1987-01-01

    Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trapping in the buried insulator, is reduced by lowering the oxygen dose as well as by an additional nitrogen implant, without degrading the front channel transistor characteristics. The improvements in the radiation characteristics of the buried insulator are attributed to the decrease in the buried oxide thickness or to the presence of the interfacial oxynitride layer formed by the oxygen and nitrogen implants

  17. 4H-SiC surface energy tuning by nitrogen up-take

    Energy Technology Data Exchange (ETDEWEB)

    Pitthan, E., E-mail: eduardo.pitthan@ufrgs.br [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); PGMICRO, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Amarasinghe, V.P. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Xu, C.; Gustafsson, T. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States); Stedile, F.C. [PGMICRO, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Instituto de Química, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Feldman, L.C. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States)

    2017-04-30

    Highlights: • Wettability modification of 4H-SiC as a function of nitrogen adsorption is reported. • SiC surface energy was significantly reduced as nitrogen was incorporated. • Modifications obtained were proved to be inert to etching and stable against time. • Variable control of SiC surface provides new opportunities for biomedical applications. - Abstract: Surface energy modification and surface wettability of 4H silicon carbide (0001) as a function of nitrogen adsorption is reported. The surface wettability is shown to go from primarily hydrophilic to hydrophobic and the surface energy was significantly reduced with increasing nitrogen incorporation. These changes are investigated by x-ray photoelectron spectroscopy and contact angle measurements. The surface energy was quantitatively determined by the Fowkes model and interpreted primarily in terms of the variation of the surface chemistry with nitrogen coverage. Variable control of SiC surface energies with a simple and controllable atomic additive such as nitrogen that is inert to etching, stable against time, and also effective in electrical passivation, can provide new opportunities for SiC biomedical applications, where surface wetting plays an important role in the interaction with the biological interfaces.

  18. Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

    Science.gov (United States)

    Choi, Young-Hwan; Ryu, Han-Youl

    2018-04-01

    We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

  19. Modelling nitrogen saturation and carbon accumulation in heathland soils under elevated nitrogen deposition

    International Nuclear Information System (INIS)

    Evans, C.D.; Caporn, S.J.M.; Carroll, J.A.; Pilkington, M.G.; Wilson, D.B.; Ray, N.; Cresswell, N.

    2006-01-01

    A simple model of nitrogen (N) saturation, based on an extension of the biogeochemical model MAGIC, has been tested at two long-running heathland N manipulation experiments. The model simulates N immobilisation as a function of organic soil C/N ratio, but permits a proportion of immobilised N to be accompanied by accumulation of soil carbon (C), slowing the rate of C/N ratio change and subsequent N saturation. The model successfully reproduced observed treatment effects on soil C and N, and inorganic N leaching, for both sites. At the C-rich upland site, N addition led to relatively small reductions in soil C/N, low inorganic N leaching, and a substantial increase in organic soil C. At the C-poor lowland site, soil C/N ratio decreases and N leaching increases were much more dramatic, and soil C accumulation predicted to be smaller. The study suggests that (i) a simple model can effectively simulate observed changes in soil and leachate N; (ii) previous model predictions based on a constant soil C pool may overpredict future N leaching; (iii) N saturation may develop most rapidly in dry, organic-poor, high-decomposition systems; and (iv) N deposition may lead to significantly enhanced soil C sequestration, particularly in wet, nutrient-poor, organic-rich systems. - Enhanced carbon sequestration may slow the rate of nitrogen saturation in heathlands

  20. Behavior of ion-implanted cesium in silicon dioxide films

    International Nuclear Information System (INIS)

    Fishbein, B.J.

    1988-01-01

    Charged impurities in silicon dioxide can be used to controllably shift the flatband voltage of metal-oxide-semiconductor devices independently of the substrate doping, the gate oxide thickness and the gate-electrode work function. Cesium is particularly well suited for this purpose because it is immobile in SiO 2 at normal device operating temperatures, and because it can be controllably introduced into oxide films by ion implantation. Cesium is positively charged in silicon dioxide, resulting in a negative flatband voltage shift. Possible applications for cesium technology include solar cells, devices operated at liquid nitrogen temperature, and power devices. The goal of this work has been to characterize as many aspects of cesium behavior in silicon dioxide as are required for practical applications. Accordingly, cesium-ion implantation, cesium diffusion, and cesium electrical activation in SiO 2 were studied over a broad range of processing conditions. The electrical properties of cesium-containing oxides, including current-voltage characteristics, interface trap density, and inversion-layer carrier mobility were examined, and several potential applications for cesium technology have been experimentally demonstrated

  1. Leaching of Titanium and Silicon from Low-Grade Titanium Slag Using Hydrochloric Acid Leaching

    Science.gov (United States)

    Zhao, Longsheng; Wang, Lina; Qi, Tao; Chen, Desheng; Zhao, Hongxin; Liu, Yahui; Wang, Weijing

    2018-05-01

    Acid-leaching behaviors of the titanium slag obtained by selective reduction of vanadium-bearing titanomagnetite concentrates were investigated. It was found that the optimal leaching of titanium and silicon were 0.7% and 1.5%, respectively. The titanium and silicon in the titanium slag were firstly dissolved in the acidic solution to form TiO2+ and silica sol, and then rapidly reprecipitated, forming hydrochloric acid (HCl) leach residue. Most of the silicon presented in the HCl leach residue as floccules-like silica gel, while most of the titanium was distributed in the nano-sized rod-like clusters with crystallite refinement and intracrystalline defects, and, as such, 94.3% of the silicon was leached from the HCl leach residue by alkaline desilication, and 96.5% of the titanium in the titanium-rich material with some rutile structure was then digested by the concentrated sulfuric acid. This provides an alternative route for the comprehensive utilization of titanium and silicon in titanium slag.

  2. Surface topography and morphology characterization of PIII irradiated silicon surface

    International Nuclear Information System (INIS)

    Sharma, Satinder K.; Barthwal, Sumit

    2008-01-01

    The effect of plasma immersion ion implantation (PIII) treatment on silicon surfaces was investigated by micro-Raman and atomic force microscopy (AFM) technique. The surface damage was given by the implantation of carbon, nitrogen, oxygen and argon ions using an inductively coupled plasma (ICP) source at low pressure. AFM studies show that surface topography of the PIII treated silicon wafers depend on the physical and chemical nature of the implanted species. Micro-Raman spectra indicate that the significant reduction of intensity of Raman peak after PIII treatment. Plasma immersion ion implantation is a non-line-of-sight ion implantation method, which allows 3D treatment of materials. Therefore, PIII based surface modification and plasma immersion ion deposition (PIID) coatings are applied in a wide range of situations.

  3. Even low to medium nitrogen deposition impacts vegetation of dry, coastal dunes around the Baltic Sea

    International Nuclear Information System (INIS)

    Remke, Eva; Brouwer, Emiel; Kooijman, Annemieke; Blindow, Irmgard; Esselink, Hans; Roelofs, Jan G.M.

    2009-01-01

    Coastal dunes around the Baltic Sea have received small amounts of atmospheric nitrogen and are rather pristine ecosystems in this respect. In 19 investigated dune sites the atmospheric wet nitrogen deposition is 3-8 kg N ha -1 yr -1 . The nitrogen content of Cladonia portentosa appeared to be a suitable biomonitor of these low to medium deposition levels. Comparison with EMEP-deposition data showed that Cladonia reflects the deposition history of the last 3-6 years. With increasing nitrogen load, we observed a shift from lichen-rich short grass vegetation towards species-poor vegetation dominated by the tall graminoid Carex arenaria. Plant species richness per field site, however, does not decrease directly with these low to medium N deposition loads, but with change in vegetation composition. Critical loads for acidic, dry coastal dunes might be lower than previously thought, in the range of 4-6 kg N ha -1 yr -1 wet deposition. - Even low to medium nitrogen deposition impacts Baltic dune vegetation promoting a dominance of taller graminoids

  4. Modelling the X-ray powder diffraction of nitrogen-expanded austenite using the Debye formula

    DEFF Research Database (Denmark)

    Oddershede, Jette; Christiansen, Thomas; Ståhl, Kenny

    2008-01-01

    Stress-free and homogeneous samples of nitrogen-expanded austenite, a defect-rich f.c.c. structure with a high interstitial nitrogen occupancy (between 0.36 and 0.61), have been studied using X-ray powder diffraction and Debye simulations. The simulations confirm the presence of deformation...... to be indistinguishable to X-ray powder diffraction....

  5. Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

    International Nuclear Information System (INIS)

    Shams, Q.A.

    1988-01-01

    Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing

  6. Room temperature NO2 gas sensing of Au-loaded tungsten oxide nanowires/porous silicon hybrid structure

    International Nuclear Information System (INIS)

    Wang Deng-Feng; Liang Ji-Ran; Li Chang-Qing; Yan Wen-Jun; Hu Ming

    2016-01-01

    In this work, we report an enhanced nitrogen dioxide (NO 2 ) gas sensor based on tungsten oxide (WO 3 ) nanowires/porous silicon (PS) decorated with gold (Au) nanoparticles. Au-loaded WO 3 nanowires with diameters of 10 nm–25 nm and lengths of 300 nm–500 nm are fabricated by the sputtering method on a porous silicon substrate. The high-resolution transmission electron microscopy (HRTEM) micrographs show that Au nanoparticles are uniformly distributed on the surfaces of WO 3 nanowires. The effect of the Au nanoparticles on the NO 2 -sensing performance of WO 3 nanowires/porous silicon is investigated over a low concentration range of 0.2 ppm–5 ppm of NO 2 at room temperature (25 °C). It is found that the 10-Å Au-loaded WO 3 nanowires/porous silicon-based sensor possesses the highest gas response characteristic. The underlying mechanism of the enhanced sensing properties of the Au-loaded WO 3 nanowires/porous silicon is also discussed. (paper)

  7. Cat-CVD-prepared oxygen-rich μc-Si:H for wide-bandgap material

    International Nuclear Information System (INIS)

    Matsumoto, Yasuhiro; Ortega, Mauricio; Peza, Juan-Manuel; Reyes, Mario-Alfredo; Escobosa, Arturo

    2005-01-01

    Microcrystalline phase-involved oxygen-rich a-Si:H (hydrogenated amorphous silicon) films have been obtained using catalytic chemical vapor deposition (Cat-CVD) process. Pure SiH 4 (silane), H 2 (hydrogen), and O 2 (oxygen) gases were introduced in the chamber by maintaining a pressure of 0.1 Torr. A tungsten catalyzer was fixed at temperatures of 1750 and 1950 deg. C for film deposition on glass and crystalline silicon substrates at 200 deg. C. As revealed from X-ray diffraction spectra, the microcrystalline phase appears for oxygen-rich a-Si:H samples deposited at a catalyzer temperature of 1950 deg. C. However, this microcrystalline phase tends to disappear for further oxygen incorporation. The oxygen content in the deposited films was corroborated by FTIR analysis revealing Si-O-Si bonds and typical Si-H bonding structures. The optical bandgap of the sample increases from 2.0 to 2.7 eV with oxygen gas flow and oxygen incorporation to the deposited films. In the present thin film deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations

  8. Surface Modification of Multi-Walled Carbon Nanotubes via Hemoglobin-Derived Iron and Nitrogen-Rich Carbon Nanolayers for the Electrocatalysis of Oxygen Reduction

    Directory of Open Access Journals (Sweden)

    Wensheng Li

    2017-05-01

    Full Text Available The great challenge of boosting the oxygen reduction reaction (ORR activity of non-noble-metal electrocatalysts is how to achieve effective exposure and full utilization of nitrogen-rich active sites. To realize the goals of high utilization of active sites and fast electron transport, here we report a new strategy for synthesis of an iron and nitrogen co-doped carbon nanolayers-wrapped multi-walled carbon nanotubes as ORR electrocatalyst (N-C@CNT-Fe via using partially carbonized hemoglobin as a single-source precursor. The onset and half-wave potentials for ORR of N-C@CNT-Fe are only 45 and 54 mV lower than those on a commercial Pt/C (20 wt.% Pt catalyst, respectively. Besides, this catalyst prepared in this work has been confirmed to follow a four-electron reaction mechanism in ORR process, and also displays ultra-high electrochemical cycling stability in both acidic and alkaline electrolytes. The enhancement of ORR activity can be not only attributed to full exposure and utilization of active site structures, but also can be resulted from the improvement of electrical conductivity owing to the introduction of CNT support. The analysis of X-ray photoelectric spectroscopy shows that both Fe–N and graphitic-N species may be the ORR active site structures of the prepared catalyst. Our study can provide a valuable idea for effective improvement of the electrocatalytic activity of non-noble-metal ORR catalysts.

  9. Pulsed laser ablation of silicon with low laser fluence in a low-pressure of ammonia ambient

    International Nuclear Information System (INIS)

    Choo, Cheow-Keong; Tohara, Makoto; Enomoto, Kazuhiro; Tanaka, Katsumi

    2004-01-01

    Silicon was ablated by 532 nm wavelength of Nd:YAG laser in ammonia gas ambient. The influence of laser fluence and gas ambient pressures between 1.33x10 1 to 1.33x10 -5 Pa on the deposited compound was studied by in situ X-ray photoelectron spectroscopy and transmission Fourier transform infrared spectroscopy techniques. The results indicate that the deposited compound is composed of nonstoichiometric silicon nitride (SiN x , x=0-0.84). It has been shown that the composition of nitrogen to silicon is sensitive to the laser fluence; it increases with decreasing laser fluence. However, the ammonia gas ambient in these low pressures range had no influence on the composition of the deposited compound. The reaction of the ablated silicon with low-pressure ambient ammonia is proposed to be occurred on the substrate

  10. Porous Silicon Hydrogen Sensor at Room Temperature: The Effect of Surface Modification and Noble Metal Contacts

    Directory of Open Access Journals (Sweden)

    Jayita KANUNGO

    2009-04-01

    Full Text Available Porous silicon (PS was fabricated by anodization of p-type crystalline silicon of resistivity 2-5 Ω cm. After formation, the PS surface was modified by the solution containing noble metal like Pd. Pd-Ag catalytic contact electrodes were deposited on porous silicon and on p-Silicon to fabricate Pd-Ag/PS/p-Si/Pd-Ag sensor structure to carry out the hydrogen sensing experiments. The Sensor was exposed to 1% hydrogen in nitrogen as carrier gas at room temperature (270C. Pd modified sensor showed minimum fluctuations and consistent performance with 86% response, response time and recovery time of 24 sec and 264 sec respectively. The stability experiments were studied for both unmodified and Pd modified sensor structures for a period of about 24 hours and the modified sensors showed excellent durability with no drift in response behavior.

  11. Micro-cutting of silicon implanted with hydrogen and post-implantation thermal treatment

    Science.gov (United States)

    Jelenković, Emil V.; To, Suet; Sundaravel, B.; Xiao, Gaobo; Huang, Hu

    2016-07-01

    It was reported that non-amorphizing implantation by hydrogen has a potential in improving silicon machining. Post-implantation high-temperature treatment will affect implantation-induced damage, which can have impact on silicon machining. In this article, a relation of a thermal annealing of hydrogen implanted in silicon to micro-cutting experiment is investigated. Hydrogen ions were implanted into 4″ silicon wafers with 175 keV, 150 keV, 125 keV and doses of 2 × 1016 cm-2, 2 × 1016 cm-2 and 3 × 1016 cm-2, respectively. In this way, low hydrogen atom-low defect concentration was created in the region less than ~0.8 μm deep and high hydrogen atom-high defect concentration was obtained at silicon depth of ~0.8-1.5 μm. The post-implantation annealing was carried out at 300 and 400 °C in nitrogen for 1 h. Physical and electrical properties of implanted and annealed samples were characterized by secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD), Rutherford backscattering (RBS) and nanoindentation. Plunge cutting experiment was carried out in and silicon crystal direction. The critical depth of cut and cutting force were monitored and found to be influenced by the annealing. The limits of hydrogen implantation annealing contribution to the cutting characteristics of silicon are discussed in light of implantation process and redistribution of hydrogen and defects generation during annealing process.

  12. Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon

    Directory of Open Access Journals (Sweden)

    Pushpendra Kumar

    2007-01-01

    Full Text Available The most common fabrication technique of porous silicon (PS is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.

  13. NOx reduction and NO2 emission characteristics in rich-lean combustion of hydrogen

    OpenAIRE

    Shudo, Toshio; Omori, Kento; Hiyama, Osamu

    2008-01-01

    Hydrogen is a clean alternative to conventional hydrocarbon fuels, but it is very important to reduce the nitrogen oxides (NOx) emissions generated by hydrogen combustion. The rich-lean combustion or staged combustion is known to reduce NOx emissions from continuous combustion burners such as gas turbines and boilers, and NOx reduction effects have been demonstrated for hydrocarbon fuels. The authors applied rich-lean combustion to a hydrogen gas turbine and showed its NOx reduction effect in...

  14. Fabrication of flexible hierarchical porous nitrogen-doped carbon nanofiber films for application in binder-free supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Kaibing, E-mail: kbhuang8888@163.com; Yao, Yiyuan; Yang, Xiuwen; Chen, Zhenhua; Li, Min

    2016-02-01

    Hierarchical porous nitrogen-doped carbon nanofiber (HPNCNF) films were prepared via a simple electrospinning process, in which polyacrylonitrile and silicone surfactants were adopted as carbon source and porogen, respectively, followed by a thermal treatment. The morphology, chemical composition, and porosity of the HPNCNFs were investigated by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and nitrogen adsorption–desorption experiments. The as-prepared HPNCNFs with a specific surface area of 656 m{sup 2} g{sup −1}, a hierarchical pore structure, and a nitrogen content of 8.1 at% showed a specific capacitance of 289 F g{sup −1} in a 6 mol L{sup −1} KOH aqueous solution with excellent cycle durability, making HPNCNF films a promising electrode material for a future application in supercapacitors. - Highlights: • HPNCNF films are prepared by electrospinning followed by thermal treatment. • Silicone surfactants are adopted as porogen to prepare HPNCNF films. • The HPNCNF films show a specific capacitance of 289 F g{sup −1} at a current density of 0.2 A g{sup −1}.

  15. The LHCb RICH system; detector description and operation

    Energy Technology Data Exchange (ETDEWEB)

    Papanestis, A., E-mail: antonis.papanestis@stfc.ac.uk

    2014-12-01

    Two RICH detectors provide positive charged hadron identification in the LHCb experiment at the Large Hadron Collider at CERN. RICH 1 covers the full acceptance of the spectrometer and contains two radiators: aerogel and C{sub 4}F{sub 10}. RICH 2 covers half the acceptance and uses CF{sub 4} as a Cherenkov radiator. Photon detection is performed by the Hybrid Photon Detectors (HPDs), with silicon pixel sensors and bump-bonded readout encapsulated in a vacuum tube for efficient, low-noise single photon detection. The LHCb RICH detectors form a complex system of three radiators, 120 mirrors and 484 photon detectors operating in the very challenging environment of the LHC. The high performance of the system in pion and kaon identification in the momentum range of 2–100 GeV/c is reached only after careful calibration of many parameters. Operational efficiency above 99% was achieved by a high level of automatization in the operation of the detectors, from switching-on to error recovery. The challenges of calibrating and operating such a system will be presented. - Highlights: • This paper describes the operation and calibration of the LHCb RICH detectors. • The scintillation of CF{sub 4} was successfully suppressed with CO{sub 2}. • The refractive index of the gas radiators was calibrated with data to an accuracy better than 0.1%. • The Hybrid Photons Detectors were calibrated for operation in a magnetic field without loss of resolution.

  16. Erbium doped stain etched porous silicon

    International Nuclear Information System (INIS)

    Gonzalez-Diaz, B.; Diaz-Herrera, B.; Guerrero-Lemus, R.; Mendez-Ramos, J.; Rodriguez, V.D.; Hernandez-Rodriguez, C.; Martinez-Duart, J.M.

    2008-01-01

    In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO 3 solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er 3+ ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy

  17. Chitin: 'Forgotten' Source of Nitrogen: From Modern Chitin to Thermally Mature Kerogen: Lessons from Nitrogen Isotope Ratios

    Science.gov (United States)

    Schimmelmann, A.; Wintsch, R.P.; Lewan, M.D.; DeNiro, M.J.

    1998-01-01

    Chitinous biomass represents a major pool of organic nitrogen in living biota and is likely to have contributed some of the fossil organic nitrogen in kerogen. We review the nitrogen isotope biogeochemistry of chitin and present preliminary results suggesting interaction between kerogen and ammonium during thermal maturation. Modern arthropod chitin may shift its nitrogen isotope ratio by a few per mil depending on the chemical method of chitin preparation, mostly because N-containing non-amino-sugar components in chemically complex chitin cannot be removed quantitatively. Acid hydrolysis of chemically complex chitin and subsequent ion-chromatographic purification of the "deacetylated chitin-monomer" D-glucosamine (in hydrochloride form) provides a chemically well-defined, pure amino-sugar substrate for reproducible, high-precision determination of ??15N values in chitin. ??15N values of chitin exhibited a variability of about one per mil within an individual's exoskeleton. The nitrogen isotope ratio differed between old and new exoskeletons by up to 4 per mil. A strong dietary influence on the ??15N value of chitin is indicated by the observation of increasing ??15N values of chitin from marine crustaceans with increasing trophic level. Partial biodegradation of exoskeletons does not significantly influence ??15N values of remaining, chemically preserved amino sugar in chitin. Diagenesis and increasing thermal maturity of sedimentary organic matter, including chitin-derived nitrogen-rich moieties, result in humic compounds much different from chitin and may significantly change bulk ??15N values. Hydrous pyrolysis of immature source rocks at 330??C in contact with 15N-enriched NH4Cl, under conditions of artificial oil generation, demonstrates the abiogenic incorporation of inorganic nitrogen into carbon-bound nitrogen in kerogen. Not all organic nitrogen in natural, thermally mature kerogen is therefore necessarily derived from original organic matter, but may

  18. Simple synthesis of nitrogen-rich polymer network and its further amination with PEI for CO2 adsorption

    Science.gov (United States)

    Yin, Fengqin; Zhuang, Linzhou; Luo, Xianyong; Chen, Shuixia

    2018-03-01

    The nitrogen-rich polymer network (MF/PAM) was synthesized through interpenetration between the molecular chains of melamine-formaldehyde resin(MF) and polyacrylamide (PAM), to which the polyethylene imine (PEI) was grafted to obtain solid amine adsorbent (MF/PAM-g-PEI). Compared with MF, the swelling capacity of MF/PAM was greatly enhanced, it could swell rapidly and directly in water. Although the interpenetration of PAM into MF may reduce the porosity of MF/PAM, the CO2 capture capacity of the solid amine adsorbents (MF/PAM-g-PEI) could still reach 2.8 mmol/g at 273 K. The adsorbents also exhibited promising adsorption kinetics and regeneration performances. The kinetics observation showed that the Avrami model could better descript the CO2 adsorption process compared with the pseudo-first-order model and pseudo-second-order model. Meanwhile, the Avrami kinetic orders (na) range from 1.21 to 1.56, displaying that the both physisorption and chemisorption exist in the adsorption process and the PEI have successfully grafted onto the polymer network, which also can be confirmed by the adsorption activation energy value. After 18 adsorption-desorption recycles, the MF/PAM-g-PEI could preserve its initial capacity without any decrease. Our work provides a new method to achieve promising solid amine adsorbents with higher adsorption capacity and better regeneration performance.

  19. Embedding and electropolymerization of terthiophene derivatives in porous n-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Badeva, Diyana, E-mail: diyana.badeva@cnrs-imn.fr [Equipe Physique des Materiaux et Nanostructures, IMN, B.P. 32229, 44322 Nantes cedex 3 (France); Tran-Van, Francois, E-mail: francois.tran@univ-tours.fr [Laboratoire de Physico-Chimie des Materiaux et des Electrolytes pour l' Energie (PCM2E), E.A 6299, Universite de Tours, Faculte des Sciences et Techniques, Parc de Grandmont, 37200 Tours (France); Beouch, Layla, E-mail: layla.beouch@u-cergy.fr [Laboratoire de Physicochimie des Polymeres et des Interfaces, 5, mail Gay-Lussac, F-95031 Cergy-Pontoise Cedex (France); Chevrot, Claude, E-mail: claude.chevrot@u-cergy.fr [Laboratoire de Physicochimie des Polymeres et des Interfaces, 5, mail Gay-Lussac, F-95031 Cergy-Pontoise Cedex (France); Markova, Ivania, E-mail: vania@uctm.edu [Laboratory of Nanomaterials and Nanotechnologies, University of Chemical Technology and Metallurgy, 8 St. Kliment Ohridski blvd., 1756 Sofia (Bulgaria); Racheva, Todora, E-mail: todora@uctm.edu [Laboratory of Nanomaterials and Nanotechnologies, University of Chemical Technology and Metallurgy, 8 St. Kliment Ohridski blvd., 1756 Sofia (Bulgaria); Froyer, Gerard, E-mail: gerard.froyer@cnrs-imn.fr [Equipe Physique des Materiaux et Nanostructures, IMN, B.P. 32229, 44322 Nantes cedex 3 (France)

    2012-04-16

    Highlights: Black-Right-Pointing-Pointer Development of a mesoporous silicon with special morphological and chemical properties. Black-Right-Pointing-Pointer Successful embedding of carboxylic-acid terthiophenic monomer in porous silicon. Black-Right-Pointing-Pointer In situ electrochemical polymerization. Black-Right-Pointing-Pointer Polarized IRTF scattering provides the tendency to preferential organization. - Abstract: A mesoporous n-type silicon/poly (3 Prime -acetic acid-2,2 Prime -5 Prime ,2 Prime Prime terthiophene)-(Poly (3TAA) nanocomposite was elaborated in order to realize new components for optoelectronics. Non-oxidized and oxidized porous silicon substrates is used and their physical and chemical properties have been studied by different techniques such as transmission electron microscopy (TEM), scanning electron microscopy (SEM) and Fourier transformed infrared spectroscopy (FTIR). Terthiophene based conjugated structure has been successfully incorporated inside the pores by capillarity at the melting temperature of the monomer. The filling of the monomer into the porous volume was probed by energy dispersive X-ray spectroscopy (EDX). Polarized infrared absorption spectroscopy results indicated that the monomer molecules show preferential orientation along the pore axis, due to hydrogen bonding, in particular that of the carboxylic groups with silanol-rich oxidized porous silicon surface. The 3TAA monomer molecules embedded in porous silicon matrix were electrochemically polymerized in situ and resonance Raman scattering spectroscopy proved the above-mentioned polymerization.

  20. Base cation depletion, eutrophication and acidification of species-rich grasslands in response to long-term simulated nitrogen deposition

    Energy Technology Data Exchange (ETDEWEB)

    Horswill, Paul [Department of Animal and Plant Sciences, University of Sheffield, Alfred Denny Building, Western Bank, Sheffield S10 2TN (United Kingdom)], E-mail: paul.horswill@naturalengland.org.uk; O' Sullivan, Odhran; Phoenix, Gareth K.; Lee, John A.; Leake, Jonathan R. [Department of Animal and Plant Sciences, University of Sheffield, Alfred Denny Building, Western Bank, Sheffield S10 2TN (United Kingdom)

    2008-09-15

    Pollutant nitrogen deposition effects on soil and foliar element concentrations were investigated in acidic and limestone grasslands, located in one of the most nitrogen and acid rain polluted regions of the UK, using plots treated for 8-10 years with 35-140 kg N ha{sup -2} y{sup -1} as NH{sub 4}NO{sub 3}. Historic data suggests both grasslands have acidified over the past 50 years. Nitrogen deposition treatments caused the grassland soils to lose 23-35% of their total available bases (Ca, Mg, K, and Na) and they became acidified by 0.2-0.4 pH units. Aluminium, iron and manganese were mobilised and taken up by limestone grassland forbs and were translocated down the acid grassland soil. Mineral nitrogen availability increased in both grasslands and many species showed foliar N enrichment. This study provides the first definitive evidence that nitrogen deposition depletes base cations from grassland soils. The resulting acidification, metal mobilisation and eutrophication are implicated in driving floristic changes. - Nitrogen deposition causes base cation depletion, acidification and eutrophication of semi-natural grassland soils.

  1. Anaerobic digestion of nitrogen rich poultry manure: Impact of thermophilic biogas process on metal release and microbial resistances.

    Science.gov (United States)

    Anjum, Reshma; Grohmann, Elisabeth; Krakat, Niclas

    2017-02-01

    Poultry manure is a nitrogen rich fertilizer, which is usually recycled and spread on agricultural fields. Due to its high nutrient content, chicken manure is considered to be one of the most valuable animal wastes as organic fertilizer. However, when chicken litter is applied in its native form, concerns are raised as such fertilizers also include high amounts of antibiotic resistant pathogenic Bacteria and heavy metals. We studied the impact of an anaerobic thermophilic digestion process on poultry manure. Particularly, microbial antibiotic resistance profiles, mobile genetic elements promoting the resistance dissemination in the environment as well as the presence of heavy metals were focused in this study. The initiated heat treatment fostered a community shift from pathogenic to less pathogenic bacterial groups. Phenotypic and molecular studies demonstrated a clear reduction of multiple resistant pathogens and self-transmissible plasmids in the heat treated manure. That treatment also induced a higher release of metals and macroelements. Especially, Zn and Cu exceeded toxic thresholds. Although the concentrations of a few metals reached toxic levels after the anaerobic thermophilic treatment, the quality of poultry manure as organic fertilizer may raise significantly due to the elimination of antibiotic resistance genes (ARG) and self-transmissible plasmids. Copyright © 2016 Elsevier Ltd. All rights reserved.

  2. Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen

    International Nuclear Information System (INIS)

    Ferrari, S.; Perego, M.; Fanciulli, M.

    2002-01-01

    We present a methodology for the quantitative estimation of nitrogen in ultrathin oxynitrides by means of time of flight secondary ion mass spectrometry (TOF-SIMS) and x-ray photoelectron spectroscopy (XPS). We consider an innovative approach to TOF-SIMS depth profiling, by elemental distribution of single species as sum of peaks containing such species. This approach is very efficient in overcoming matrix effect arising when quantifying elements were distributed in silicon and silicon oxide. We use XPS to calibrate TOF-SIMS and to obtain quantitative information on nitrogen distribution in oxynitride thin layers. In the method we propose we process TOF-SIMS and XPS data simultaneously to obtain a quantitative depth profile

  3. Catalytic upgrading nitrogen-riched wood syngas to liquid hydrocarbon mixture over Fe-Pd/ZSM-5 catalyst

    Science.gov (United States)

    Qiangu Yan; Fei Yu; Zhiyong Cai; Jilei Zhang

    2012-01-01

    Biomass like wood chips, switchgrass and other plant residues are first converted to syngas through gasification process using air, oxygen or steam. A downdraft gasifier is performed for syngas production in Mississippi State. The syngas from the gasifier contains up to 49% (vol) N2. High-level nitrogen-containing (nitrogen can be up to 60%)...

  4. Impact of Temporary Nitrogen Deprivation on Tomato Leaf Phenolics

    Directory of Open Access Journals (Sweden)

    Hélène Gautier

    2011-11-01

    Full Text Available Reducing the use of pesticides represents a major challenge of modern agriculture. Plants synthesize secondary metabolites such as polyphenols that participate in the resistance to parasites. The aim of this study was to test: (1 the impact of nitrogen deficiency on tomato (Solanum lycopersicum leaf composition and more particularly on two phenolic molecules (chlorogenic acid and rutin as well as on the general plant biomass; and (2 whether this effect continued after a return to normal nitrogen nutrition. Our results showed that plants deprived of nitrogen for 10 or 19 days contained higher levels of chlorogenic acid and rutin than control plants. In addition, this difference persisted when the plants were once again cultivated on a nitrogen-rich medium. These findings offer interesting perspectives on the use of a short period of deprivation to modulate the levels of compounds of interest in a plant.

  5. Band engineering of amorphous silicon ruthenium thin film and its near-infrared absorption enhancement combined with nano-holes pattern on back surface of silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Anran; Zhong, Hao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Wei, E-mail: wli@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gu, Deen; Jiang, Xiangdong [School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2016-10-30

    Highlights: • The increase of Ru concentration leads to a narrower bandgap of a-Si{sub 1-x}Ru{sub x} thin film. • The absorption coefficient of a-Si{sub 1-x}Ru{sub x} is higher than that of SiGe. • A double-layer absorber comprising of a-Si{sub 1-x}Ru{sub x} film and Si nano-holes layer is achieved. - Abstract: Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its bandgap limit. In this study, a narrow bandgap silicon rich semiconductor is achieved by introducing ruthenium (Ru) into amorphous silicon (a-Si) to form amorphous silicon ruthenium (a-Si{sub 1-x}Ru{sub x}) thin films through co-sputtering. The increase of Ru concentration leads to an enhancement of light absorption and a narrower bandgap. Meanwhile, a specific light trapping technique is employed to realize high absorption of a-Si{sub 1-x}Ru{sub x} thin film in a finite thickness to avoid unnecessary carrier recombination. A double-layer absorber comprising of a-Si{sub 1-x}Ru{sub x} thin film and silicon random nano-holes layer is formed on the back surface of silicon substrates, and significantly improves near-infrared absorption while the leaky light intensity is less than 5%. This novel absorber, combining narrow bandgap thin film with light trapping structure, may have a potential application in near-infrared photoelectronic devices.

  6. Technology of fabrication of silicon-lithium detector with superficial junction

    International Nuclear Information System (INIS)

    Cabal Rodriguez, A.E.; Diaz Garcia, A.; Noriega Scull, C.

    1997-01-01

    The Silicon nuclear radiation detectors transform the charge produced within the semiconductor crystal, product of the impinges of particles and X rays, in pulses of voltage at the output of the preamplifier. The planar Silicon-Lithium (Si(Li)) detector with superficial junction is basically a Pin structure diode. By mean of the diffusion and drift of Lithium in the Silicon a compensated or depletion region was created. There the incident radiation interacts with the Silicon, producing an electric signal proportional to the detector's energy deposited in the semiconductor. The technological process of fabrication this kind of detectors comprises several stages, some of them complex and of long duration. They also demand a systematic control. The technological process of Si(Li) detector's fabrication was carried out. The detector's fabrication electric characteristics were measured in some steps. An obtained device was mounted in the holder within a cryostat, in order to work to temperature of the liquid nitrogen. The energy resolution of the detector was measured and the value was 180 eV for the line of 5.9 KeV of an Fe-55 source. This value has allowed to work with the detector in energy disperse X-rays fluorescence. (author) [es

  7. Assessment of a silicon detector for pulsed neutron scattering experiments

    International Nuclear Information System (INIS)

    Tardocchi, M.; Arnaboldi, C.; Gorini, G.; Imberti, S.; Pessina, G.; Previtali, E.; Andreani, C.; Pietropaolo, A.; Senesi, R.

    2004-01-01

    Resonance detectors (RD) are being developed for neutron spectroscopy in the epithermal energy region at spallation neutron sources. Different choices of converter foils and gamma spectrometers are being compared as part of an optimization and selection process within the TECHNI project. This paper reports on the design of a silicon detector system and some preliminary tests on the VESUVIO spectrometer. The detector has a good efficiency in the X-ray energy range, where two intense photon peaks (at 12 and 48 keV) are expected to be emitted following neutron capture in a uranium converter foil. The detector energy resolution has been improved by nitrogen vapor cooling of the silicon chip and by careful design of the preamplifier electronics. Neutron time of flight spectra have been measured on VESUVIO when the converter foil is placed in the neutron beam. In that case, the detector response is dominated by a continuum due to Compton detection of gammas of higher energy. These results provide a basis for a critical assessment of the applicability of silicon detectors for RD measurements of epithermal neutrons

  8. Doping of silicon carbide by ion implantation

    International Nuclear Information System (INIS)

    Gimbert, J.

    1999-01-01

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  9. Spontaneously-acoustic hypersound long-range stimulation of silicon nitride synthesis in silicon at argon ion irradiation

    CERN Document Server

    Demidov, E S; Markov, K A; Sdobnyakov, V V

    2001-01-01

    The work is dedicated to the nature of the average energy ions implantation process effect on the crystal defective system at the distances, exceeding by three-four orders the averagely projected ions run value. It is established that irradiation by the argon ions stimulated the Si sub 3 N sub 4 phase formation in the preliminarily nitrogen-saturated layers at the distances of approximately 600 mu m from the ions deceleration zone. It is supposed that there appear sufficiently effective pulse sources of the hypersonic shock waves in the area of the Ar sup + deceleration zone. These waves are the result of the jump-like origination and grid evolution of the loop-shaped dislocations and argon blisters as well as of the blisters explosion, The evaluations show that the peak pressure in wave due to the synchronized explosion of blisters in the nitrogen-saturated area on the reverse side of the silicon plate 600 mu m thick may exceed 10 sup 8 Pa and cause experimentally observed changes

  10. Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

    Science.gov (United States)

    Atiwongsangthong, Narin

    2012-08-01

    The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

  11. Zinc Bioavailability from Phytate-Rich Foods and Zinc Supplements. Modeling the Effects of Food Components with Oxygen, Nitrogen, and Sulfur Donor Ligands.

    Science.gov (United States)

    Tang, Ning; Skibsted, Leif H

    2017-10-04

    Aqueous solubility of zinc phytate (K sp = (2.6 ± 0.2) × 10 -47 mol 7 /L 7 ), essential for zinc bioavailability from plant foods, was found to decrease with increasing temperature corresponding to ΔH dis of -301 ± 22 kJ/mol and ΔS dis of -1901 ± 72 J/(mol K). Binding of zinc to phytate was found to be exothermic for the stronger binding site and endothermic for the weaker binding site. The solubility of the slightly soluble zinc citrate and insoluble zinc phytate was found to be considerably enhanced by the food components with oxygen donor, nitrogen donor, and sulfur donor ligands. The driving force for the enhanced solubility is mainly due to the complex formation between zinc and the investigated food components rather than ligand exchange and ternary complex formation as revealed by quantum mechanical calculations and isothermal titration calorimetry. Histidine and citrate are promising ligands for improving zinc absorption from phytate-rich foods.

  12. Effects of experimental nitrogen additions on plant diversity in tropical forests of contrasting disturbance regimes in southern China

    International Nuclear Information System (INIS)

    Lu Xiankai; Mo Jiangming; Gilliam, Frank S.; Yu Guirui; Zhang Wei; Fang Yunting; Huang Juan

    2011-01-01

    Responses of understory plant diversity to nitrogen (N) additions were investigated in reforested forests of contrasting disturbance regimes in southern China from 2003 to 2008: disturbed forest (with harvesting of understory vegetation and litter) and rehabilitated forest (without harvesting). Experimental additions of N were administered as the following treatments: Control, 50 kg N ha -1 yr -1 , and 100 kg N ha -1 yr -1 . Nitrogen additions did not significantly affect understory plant richness, density, and cover in the disturbed forest. Similarly, no significant response was found for canopy closure in this forest. In the rehabilitated forest, species richness and density showed no significant response to N additions; however, understory cover decreased significantly in the N-treated plots, largely a function of a significant increase in canopy closure. Our results suggest that responses of plant diversity to N deposition may vary with different land-use history, and rehabilitated forests may be more sensitive to N deposition. - Highlights: → Nitrogen addition had no significant effect on understory plant diversity in the disturbed forest. → Nitrogen addition significantly decreased understory plant cover. → Nitrogen addition had no effect on richness and density in the rehabilitated forest. → The decrease is largely a function of a significant increase in canopy closure. → Land-use practices may dominate the responses of plant diversity to N addition. - Research in disturbed forests of southeastern China demonstrates that land-use history can substantially alter effects of excess nitrogen deposition on plant diversity of tropical forest ecosystems.

  13. Nitrogen binding behavior in ZnO films with time-resolved cathodoluminescence

    International Nuclear Information System (INIS)

    Mei, Y.F.; Fu, Ricky K.Y.; Siu, G.G.; Wong, K.W.; Chu, Paul K.; Wang, R.S.; Ong, H.C.

    2006-01-01

    ZnO film with (1 0 0) orientation was produced on silicon substrate and doped with nitrogen using plasma immersion ion implantation. The effects due to N doping were investigated using cathodoluminescence (CL). In the heavily nitrogen-doped ZnO film, the intensity of ultraviolet (UV) band decreases and that of the visible band increases as a function of the electron bombardment cycle i.e. time. Based on the X-ray photoelectron spectroscopy (XPS) analysis, the unstable Zn-N bond is responsible for the CL behavior and the experimental results agree well with the first-principle calculation. Our work is helpful to our understanding of the role of p-type dopants in ZnO

  14. Plasma-assisted nitrogen doping of VACNTs for efficiently enhancing the supercapacitor performance

    Energy Technology Data Exchange (ETDEWEB)

    Mashayekhi, Alireza; Hosseini, Seyed Mahmoud [University of Tehran, Nano-fabricated Energy Devices Laboratory, School of Electrical and Computer Engineering, College of Engineering (Iran, Islamic Republic of); Hassanpour Amiri, Morteza; Namdar, Naser [University of Tehran, Thin Film and Nano-electronics Laboratory, Nano-electronics Centre of Excellence, School of Electrical and Computer Engineering, College of Engineering (Iran, Islamic Republic of); Sanaee, Zeinab, E-mail: z.sanaee@ut.ac.ir [University of Tehran, Nano-fabricated Energy Devices Laboratory, School of Electrical and Computer Engineering, College of Engineering (Iran, Islamic Republic of)

    2016-06-15

    Nitrogen doping of vertically aligned carbon nanotubes (VACNTs) using plasma-enhanced chemical vapour deposition has been investigated to improve the supercapacitance performance of CNTs. Incorporating electrochemical measurements on the open-ended nitrogen-doped CNTs, showed the achievement of 6 times improvement in the capacitance value. For nitrogen-doped CNTs on silicon substrate, specific capacitance of 60 F g{sup −1} was obtained in 0.5 M KCl solution, with capacity retention ratio above 90 % after cycled at 0.1 A g{sup −1} for 5000 cycles. Using this sample, a symmetric supercapacitance was fabricated which showed the power density of 37.5 kW kg{sup −1}. The facile fabrication approach and its excellent capacitance improvement, propose it as an efficient technique for enhancing the supercapacitance performance of the carbon-based electrodes.

  15. Protection against corrosion to high temperature by means of rich silicon coatings; Proteccion contra corrosion a alta temperatura por medio de recubrimientos ricos en silicio

    Energy Technology Data Exchange (ETDEWEB)

    Porcayo Calderon, Jesus [Instituto de Investigaciones Electricas, Temixco, Morelos (Mexico)

    1999-07-01

    In this research work the study of the process of corrosion by molten salts of sodium sulphate-vanadium pentoxide and its prevention by means of metallic coatings rich in silicon was contemplated. The research encompassed the development of the coating system, the chemical and thermochemical analysis of the system sodium sulphate - vanadium pentoxide, the evaluation of the resistance to the corrosion of the coating system by gravimetric and electrochemistry techniques, and the study of the stability of the coating system - substrate. [Spanish] En este trabajo de investigacion se contempla el estudio del proceso de corrosion por sales fundidas de sulfato de sodio - pentoxido de vanadio y su prevencion por medio de recubrimientos metalicos ricos en silicio. La investigacion abarca el desarrollo del sistema de recubrimientos, el analisis quimico y termoquimico del sistema sulfato de sodio - pentoxido de vanadio, la evaluacion de la resistencia a la corrosion del sistema de recubrimientos por tecnicas gravimetricas y electroquimicas, y el estudio de la estabilidad del sistema recubrimiento - sustrato.

  16. Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

    Directory of Open Access Journals (Sweden)

    Akarapu Ashok

    2014-01-01

    Full Text Available Silicon dioxide (SiO2 thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs and microelectromechanical systems (MEMS. Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics.

  17. Non-destructive photon activation analysis of carbon and nitrogen in thin films

    International Nuclear Information System (INIS)

    Shikano, Koji; Katoh, Masaaki; Masumoto, Kazuyoshi; Ohtsuki, Tsutomu

    1998-01-01

    Study was made on interference nuclear reactions with 12 C(γ,n) 11 C and 14 N(γ,n) 13 N reactions, interference radioactivity from the matrix, and prevention of contamination from the atmosphere. The following were made clear: Interference nuclear reactions can be neglected by controlling the radiation energy of bremsstrahlung below 30 MeV; radiation interference can be avoided by starting measurement 20-30 min after irradiation, though 29 Al is formed from Si substrate; and contamination from the atmosphere can be controlled by He gas replacement. With graphite and boron nitride used as the reference standards, carbon in silicon carbide film and nitrogen in silicon nitride film were determined with the result that their concentrations in the films were 37.03±1.28 μg/cm 2 and 52.97±2.97 μg/cm 2 , respectively. The determination limits of this method were 0.3 μg for carbon and 3 μg for nitrogen. The measurement of film thickness distribution revealed that these film samples could be used as light element reference standards for charged particle activation analysis. (N.H.)

  18. Nanodiamonds with silicon vacancy defects for nontoxic photostable fluorescent labeling of neural precursor cells.

    Science.gov (United States)

    Merson, Tobias D; Castelletto, Stefania; Aharonovich, Igor; Turbic, Alisa; Kilpatrick, Trevor J; Turnley, Ann M

    2013-10-15

    Nanodiamonds (NDs) containing silicon vacancy (SiV) defects were evaluated as a potential biomarker for the labeling and fluorescent imaging of neural precursor cells (NPCs). SiV-containing NDs were synthesized using chemical vapor deposition and silicon ion implantation. Spectrally, SiV-containing NDs exhibited extremely stable fluorescence and narrow bandwidth emission with an excellent signal to noise ratio exceeding that of NDs containing nitrogen-vacancy centers. NPCs labeled with NDs exhibited normal cell viability and proliferative properties consistent with biocompatibility. We conclude that SiV-containing NDs are a promising biomedical research tool for cellular labeling and optical imaging in stem cell research.

  19. Nitrogen removal from sludge digester liquids by nitrification/denitrification or partial nitritation/anammox: environmental and economical considerations.

    Science.gov (United States)

    Fux, C; Siegrist, H

    2004-01-01

    In wastewater treatment plants with anaerobic sludge digestion, 15-20% of the nitrogen load is recirculated to the main stream with the return liquors from dewatering. Separate treatment of this ammonium-rich digester supernatant significantly reduces the nitrogen load of the activated sludge system. Two biological applications are considered for nitrogen elimination: (i) classical autotrophic nitrification/heterotrophic denitrification and (ii) partial nitritation/autotrophic anaerobic ammonium oxidation (anammox). With both applications 85-90% nitrogen removal can be achieved, but there are considerable differences in terms of sustainability and costs. The final gaseous products for heterotrophic denitrification are generally not measured and are assumed to be nitrogen gas (N2). However, significant nitrous oxide (N2O) production can occur at elevated nitrite concentrations in the reactor. Denitrification via nitrite instead of nitrate has been promoted in recent years in order to reduce the oxygen and the organic carbon requirements. Obviously this "achievement" turns out to be rather disadvantageous from an overall environmental point of view. On the other hand no unfavorable intermediates are emitted during anaerobic ammonium oxidation. A cost estimate for both applications demonstrates that partial nitritation/anammox is also more economical than classical nitrification/denitrification. Therefore autotrophic nitrogen elimination should be used in future to treat ammonium-rich sludge liquors.

  20. The atomic and electronic structure of amorphous silicon nitride

    International Nuclear Information System (INIS)

    Alvarez, F.; Valladares, A.A.

    2002-01-01

    Using a novel approach to the ab initio generation of random networks we constructed two nearly stoichiometric samples of amorphous silicon nitride with the same content x= 1.29. The two 64-atom periodically-continued cubic diamond-like cells contain 28 silicons and 36 nitrogens randomly substituted, and were amorphized with a 6 f s time step by heating them to just below their melting temperature with a Harris-functional based, molecular dynamics code in the LDA approximation. The averaged total radial distribution function (RDF) obtained is compared with some existing Tersoff-like potential simulations and with experiment; ours agree with experiment. All the partial radial features are calculated and the composition of the second peak also agrees with experiment. The electronic structure is calculated and the optical gaps obtained using both a HOMO-LUMO approach and the Tauc-like procedure developed recently that gives reasonable gaps. (Author)

  1. Thermal degradation of N-rich organic laboratory analogues: new insight on the cosmomaterials organic precursor composition

    Science.gov (United States)

    Bonnet, J.-Y.; Quirico, E.; Buch, A.; Szopa, C.; Fray, N.; Cottin, H.; Thissen, R.

    2011-10-01

    The observed organic matter in the different objects, carbonaceous chondrites and IDPs, accessible to laboratory analyses is the result of a complex history. This history is divided into several phases the first of which take place into the presolar nebula and is followed by post accretional processes on the parent bodies [1, 2]. In the carbonaceous chondrites organic matter (both soluble and insoluble), nitrogen is a very minor constituent about 2wt%, but in micrometer scale localized zone of some IDPs the nitrogen content can reach values as high as 20wt% [1, 3]. Additionally, the Insoluble Organic Matter (IOM) polyaromatic structure suggests a formation through thermal processes of the organic precursor(s). In this IOM N-bearing cycles have been identified but not chemical functions like amino groups. The precursor(s) of all the organic matter observed in IOM and IDPs could then be nitrogen rich. To test this scenario, N-rich laboratory analogues, (polymeric solids) were thermally degraded at four different temperatures to simulate short time thermal processes in the solar nebula.

  2. Rich soil carbon and nitrogen but low atmospheric greenhouse gas fluxes from North Sulawesi mangrove swamps in Indonesia.

    Science.gov (United States)

    Chen, Guang C; Ulumuddin, Yaya I; Pramudji, Sastro; Chen, Shun Y; Chen, Bin; Ye, Yong; Ou, Dan Y; Ma, Zhi Y; Huang, Hao; Wang, Jing K

    2014-07-15

    The soil to atmosphere fluxes of greenhouse gases N2O, CH4 and CO2 and their relationships with soil characteristics were investigated in three tropical oceanic mangrove swamps (Teremaal, Likupang and Kema) in North Sulawesi, Indonesia. Mangrove soils in North Sulawesi were rich in organic carbon and nitrogen, but the greenhouse gas fluxes were low in these mangroves. The fluxes ranged -6.05-13.14 μmol m(-2)h(-1), -0.35-0.61 μmol m(-2)h(-1) and -1.34-3.88 mmol m(-2)h(-1) for N2O, CH4 and CO2, respectively. The differences in both N2O and CH4 fluxes among different mangrove swamps and among tidal positions in each mangrove swamp were insignificant. CO2 flux was influenced only by mangrove swamps and the value was higher in Kema mangrove. None of the measured soil parameters could explain the variation of CH4 fluxes among the sampling plots. N2O flux was negatively related to porewater salinity, while CO2 flux was negatively correlated with water content and organic carbon. This study suggested that the low gas emissions due to slow metabolisms would lead to the accumulations of organic matters in North Sulawesi mangrove swamps. Copyright © 2014 Elsevier B.V. All rights reserved.

  3. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  4. Investigation of aluminium-rich alloy system of aluminium-strontium-silicium

    International Nuclear Information System (INIS)

    Ganiev, I.N.; Vakhobov, A.B.; Dzhuraev, T.D.; Alidzhanov, F.N.

    1976-01-01

    An area of the solid solution based on aluminium was studied, and the surface was plotted of the liquidus adjoining the apex of the aluminium corner of the strontium-aluminium-silicon system. The investigation was carried out by microstructure and differential thermal analyses and by the measurement of the microhardness of the component phases. A combined solubility of silicon and strontium in aluminium was studied along three radial sections at Sr-to-Si ratios of 1/2, 1/1 and 2/1. The relationships of ''composition vs. Microhardness'', obtained in these sections, made it possible to define the boundaries of the phase regions in the aluminium corner of the strontium-aluminium-silicon system at 500 deg C. The greatest solubility is that along the Al-SrAl 2 Si 2 section at a Sr/Si ratio of 1/2. A further increase in the content of strontium brings about a drop in the solubility of silicon in solid aluminium. The projection of the liquidus surface of the strontium-aluminium-silicon system, rich in aluminium, includes four surfaces of primary crystallization: α-Al, SrAl 4 , SrAl 2 Si 2 and Si. The system comprises a section of Al-SrAl 2 Si 2 representing a quasibinary system of an eutectic type. The eutectic reaction takes place at a temperature of 640 deg C. The quasibinary Al-SrAl 2 Si 2 section divides the aluminium corner of the Sr-Al-Si system into two independent systems Al-SrAl 4 -SrAl 2 Si 2 and Al-Si-SrAl 2 Si 2 of an eutectic type

  5. Characterization of carbon, nitrogen, oxygen and refractory metals in binary and ternary silicon-based films using ion beam methods; Caracterisation des elements: carbone, azote, oxygene et metal refractaire dans des depots binaires et ternaires a base de silicium par methodes d'analyse utilisant les faisceaux d'ions

    Energy Technology Data Exchange (ETDEWEB)

    Somatri-Bouamrane, R. [Lyon-1 Univ., 69 - Villeurbanne (France). Inst. de Physique Nucleaire]|[Universite Claude Bernard, 69 - Lyon (France)

    1996-12-19

    Ion beam methods (non Rutherford backscattering, nuclear reactions) have been carried out in order to characterize silicon-based films. The cross sections for the reactions {sup 12}C({alpha},{alpha}), {sup 14}N({alpha},{alpha}), {sup 16}O({alpha},{alpha}), {sup 28}Si({alpha},{alpha}) and {sup 14}N({alpha},p) have been measured within 2 and 7 MeV. CVD beta SiC films could be analyzed and the interface between silicon carbide and the (100) silicon substrate was studied. The epitaxial growth of the beta SiC film could be modelled by comparing the results obtained with ion beam analysis, infrared spectroscopy and electron microscopy. Moreover, the stoichiometry of low pressure CVD Me-Si-N (Me=Re, W, Ti, Ta) ternary systems was studied. The evolution of the nitrogen content in W-Si-N systems allowed to study their stability with respect to the annealing conditions. (N.T.)

  6. Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

    CERN Document Server

    Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

    2000-01-01

    We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

  7. Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

    Energy Technology Data Exchange (ETDEWEB)

    Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

    2015-01-15

    Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

  8. Absorption of silicon from artesian aquifer water and its impact on bone health in postmenopausal women: a 12 week pilot study

    Directory of Open Access Journals (Sweden)

    Lee Tsz

    2010-10-01

    Full Text Available Abstract Background Decreased bone mineral density and osteoporosis in postmenopausal women represents a growing source of physical limitations and financial concerns in our aging population. While appropriate medical treatments such as bisphosphonate drugs and hormone replacement therapy exist, they are associated with serious side effects such as osteonecrosis of the jaw or increased cardiovascular risk. In addition to calcium and vitamin D supplementation, previous studies have demonstrated a beneficial effect of dietary silicon on bone health. This study evaluated the absorption of silicon from bottled artesian aquifer water and its effect on markers of bone metabolism. Methods Seventeen postmenopausal women with low bone mass, but without osteopenia or osteoporosis as determined by dual x-ray absorptiometry (DEXA were randomized to drink one liter daily of either purified water of low-silicon content (PW or silicon-rich artesian aquifer water (SW (86 mg/L silica for 12 weeks. Urinary silicon and serum markers of bone metabolism were measured at baseline and after 12 weeks and analyzed with two-sided t-tests with p Results The urinary silicon level increased significantly from 0.016 ± 0.010 mg/mg creatinine at baseline to 0.037 ± 0.014 mg/mg creatinine at week 12 in the SW group (p = 0.003, but there was no change for the PW group (0.010 ± 0.004 mg/mg creatinine at baseline vs. 0.009 ± 0.006 mg/mg creatinine at week 12, p = 0.679. The urinary silicon for the SW group was significantly higher in the silicon-rich water group compared to the purified water group (p Conclusions These findings indicate that bottled water from artesian aquifers is a safe and effective way of providing easily absorbed dietary silicon to the body. Although the silicon did not affect bone turnover markers in the short-term, the mineral's potential as an alternative prevention or treatment to drug therapy for osteoporosis warrants further longer-term investigation

  9. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  10. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  11. Plasmonic and Photonic Modes Excitation in Graphene on Silicon Photonic Crystal Membrane

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Gu, Tingyi; Hao, Yufeng

    . Being deposited on a silicon photonic crystal membrane graphene serves as a highly promising system for modern optoelectronics with rich variety of possible regimes. Depending on the relation between the photonic crystal lattice constant and wavelengths (plasmonic, photonic and free-space) we identify...... characterization. Measured data are well correlated with the numerical analysis. Combined graphene – silicon photonic crystal membranes can find applications for infrared absorbers, modulators, filters, sensors and photodetectors....... four different interaction schemes. We refer to them as metamaterial, plasmonic, photonic and diffraction grating regimes based on the principle character of light interactions with the graphene deposited on the Si photonic crystal membrane. The optimal configurations for resonant excitation of modes...

  12. Verteerbaarheid (ileaal en faecaal) van biologisch geteelde eiwitrijke voedergrondstoffen bij varkens = Digestibility (ileal and faecal) of organically-grown protein-rich raw materials in pigs

    NARCIS (Netherlands)

    Jongbloed, A.W.; Diepen, van J.T.M.

    2007-01-01

    In this research the ileal digestibility of nitrogen and amino acids and the faecal digestibility of organic matter, nitrogen, fat, non-starch polysaccharides, energy and phosphorus of protein-rich organicallygrown feed raw materials were evaluated in pigs. The products were rapeseed meal expeller,

  13. One-Step Synthesis of Microporous Carbon Monoliths Derived from Biomass with High Nitrogen Doping Content for Highly Selective CO2 Capture

    OpenAIRE

    Geng, Zhen; Xiao, Qiangfeng; Lv, Hong; Li, Bing; Wu, Haobin; Lu, Yunfeng; Zhang, Cunman

    2016-01-01

    The one-step synthesis method of nitrogen doped microporous carbon monoliths derived from biomass with high-efficiency is developed using a novel ammonia (NH3)-assisted activation process, where NH3 serves as both activating agent and nitrogen source. Both pore forming and nitrogen doping simultaneously proceed during the process, obviously superior to conventional chemical activation. The as-prepared nitrogen-doped active carbons exhibit rich micropores with high surface area and high nitrog...

  14. Dissolved nitrogen in liquid lithium - a problem in fusion reactor chemistry

    International Nuclear Information System (INIS)

    Hubberstey, P.

    1984-01-01

    When dissolved in liquid lithium, nitrogen adopts the role filled by oxygen in liquid sodium systems, reacting readily with stainless steel containment materials to form Li 9 CrN 5 as a surface product; extended reaction leads to pronounced corrosion and embrittlement problems. It also interacts with both carbon and silicon impurities forming Li 2 NCN and Li 5 SiN 3 , respectively; it is inert, however, to oxygen impurity. Although dissolved nitrogen reacts with neither the tritium generated in the breeding process nor the lead added to act as a neutron multiplier, its presence may seriously influence tritium recovery processes since it reacts with and hence may poison the majority of the transition metals (Y,Ti,Zr) presently being considered as tritium getter materials. Its reactivity with these metals forms the basis of the hot trapping technique used to remove dissolved nitrogen from liquid lithium systems; cold trapping is ineffective because of its large solubility even at temperatures just above the melting point of pure lithium (453.6K). Whenever possible, the chemistry of nitrogen dissolved in liquid lithium is rationalised using the thermodynamic concepts and its significance to fusion reactor technology stressed. (author)

  15. First-principles study of the effects of halogen dopants on the properties of intergranular films in silicon nitride ceramics

    International Nuclear Information System (INIS)

    Painter, Gayle S.; Becher, Paul F.; Kleebe, H.-J.; Pezzotti, G.

    2002-01-01

    The nanoscale intergranular films that form in the sintering of ceramics often occur as adherent glassy phases separating the crystalline grains in the ceramic. Consequently, the properties of these films are often equal in importance to those of the constituent grains in determining the ceramic's properties. The measured characteristics of the silica-rich phase separating the crystalline grains in Si 3 N 4 and many other ceramics are so reproducible that SiO 2 has become a model system for studies of intergranular films (IGF's). Recently, the influence of fluorine and chlorine dopants in SiO 2 -rich IGF's in silicon nitride was precisely documented by experiment. Along with the expected similarities between the halogens, some dramatically contrasting effects were found. But the atomic-scale mechanisms distinguishing the effects F and Cl on IGF behavior have not been well understood. First-principles density functional calculations reported here provide a quantum-level description of how these dopant-host interactions affect the properties of IGF's, with specific modeling of F and Cl in the silica-rich IGF in silicon nitride. Calculations were carried out for the energetics, structural changes, and forces on the atoms making up a model cluster fragment of an SiO 2 intergranular film segment in silicon nitride with and without dopants. Results show that both anions participate in the breaking of bonds within the IGF, directly reducing the viscosity of the SiO 2 -rich film and promoting decohesion. Observed differences in the way fluorine and chlorine affect IGF behavior become understandable in terms of the relative stabilities of the halogens as they interact with Si atoms that have lost one if their oxygen bridges

  16. Physical and electrical characteristics of silicon oxynitride films with various refractive indices

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Jeng-Hwa; Hsieh, Jung-Yu; Lin, Hsing-Ju; Tang, Wei-Yao; Chiang, Chun-Ling; Yang, Ling-Wu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan [Macronix International Co. Ltd, No 16, Li-Hsin Road, Hsinchu Science Park, Hsinchu 300, Taiwan (China); Lo, Yun-Shan; Wu, Tai-Bor, E-mail: jhliao@mxic.com.t [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)

    2009-09-07

    This study explores the relationship between both the physical and the electrical characteristics of silicon oxynitride (SiON) films and the refractive index. The single wafer rapid thermal process modules were used for low pressure chemical vapour deposition of SiON films. A series of SiON films with refractive index between 1.50 and 1.83 were fabricated. Fourier transform infrared absorption spectroscopy and x-ray photoelectron spectroscopy identified the chemical bonding configurations of different SiON films: the Si-N bonds are replaced by Si-O bonds as the refractive index of the SiON films declines. Moreover, the Si atomic ratio is kept between 35% and 40% while the oxygen atomic ratio increases and the nitrogen atomic ratio decreases as the refractive index of the SiON film declines. The electrical characteristics of different SiON-based silicon-oxide-nitride-oxide-silicon (SONOS) devices suggest that (1) the dielectric constant increases with increasing refractive index of the SiON film and (2) the charge-trap density is inversely proportional to the oxygen concentration in the SiON film. Based on these results, the SiON films with various refractive indices can provide a wider application for silicon-based devices, such as SONOS and MOS devices.

  17. Physical and electrical characteristics of silicon oxynitride films with various refractive indices

    International Nuclear Information System (INIS)

    Liao, Jeng-Hwa; Hsieh, Jung-Yu; Lin, Hsing-Ju; Tang, Wei-Yao; Chiang, Chun-Ling; Yang, Ling-Wu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan; Lo, Yun-Shan; Wu, Tai-Bor

    2009-01-01

    This study explores the relationship between both the physical and the electrical characteristics of silicon oxynitride (SiON) films and the refractive index. The single wafer rapid thermal process modules were used for low pressure chemical vapour deposition of SiON films. A series of SiON films with refractive index between 1.50 and 1.83 were fabricated. Fourier transform infrared absorption spectroscopy and x-ray photoelectron spectroscopy identified the chemical bonding configurations of different SiON films: the Si-N bonds are replaced by Si-O bonds as the refractive index of the SiON films declines. Moreover, the Si atomic ratio is kept between 35% and 40% while the oxygen atomic ratio increases and the nitrogen atomic ratio decreases as the refractive index of the SiON film declines. The electrical characteristics of different SiON-based silicon-oxide-nitride-oxide-silicon (SONOS) devices suggest that (1) the dielectric constant increases with increasing refractive index of the SiON film and (2) the charge-trap density is inversely proportional to the oxygen concentration in the SiON film. Based on these results, the SiON films with various refractive indices can provide a wider application for silicon-based devices, such as SONOS and MOS devices.

  18. Nitrogen isotopic composition of macromolecular organic matter in interplanetary dust particles

    Science.gov (United States)

    Aléon, Jérôme; Robert, François; Chaussidon, Marc; Marty, Bernard

    2003-10-01

    Nitrogen concentrations and isotopic compositions were measured by ion microprobe scanning imaging in two interplanetary dust particles L2021 K1 and L2036 E22, in which imaging of D/H and C/H ratios has previously evidenced the presence of D-rich macromolecular organic components. High nitrogen concentrations of 10-20 wt% and δ 15N values up to +400‰ are observed in these D-rich macromolecular components. The previous study of D/H and C/H ratios has revealed three different D-rich macromolecular phases. The one previously ascribed to macromolecular organic matter akin the insoluble organic matter (IOM) from carbonaceous chondrites is enriched in nitrogen by one order of magnitude compared to the carbonaceous chondrite IOM, although its isotopic composition is still similar to what is known from Renazzo (δ 15N = +208‰). The correlation observed in macromolecular organic material between the D- and 15N-excesses suggests that the latter originate probably from chemical reactions typical of the cold interstellar medium. These interstellar materials preserved to some extent in IDPs are therefore macromolecular organic components with various aliphaticity and aromaticity. They are heavily N-heterosubstituted as shown by their high nitrogen concentrations >10 wt%. They have high D/H ratios >10 -3 and δ 15N values ≥ +400‰. In L2021 K1 a mixture is observed at the micron scale between interstellar and chondritic-like organic phases. This indicates that some IDPs contain organic materials processed at various heliocentric distances in a turbulent nebula. Comparison with observation in comets suggests that these molecules may be cometary macromolecules. A correlation is observed between the D/H ratios and δ 15N values of macromolecular organic matter from IDPs, meteorites, the Earth and of major nebular reservoirs. This suggests that most macromolecular organic matter in the inner solar system was probably issued from interstellar precursors and further processed

  19. Characteristics of fracture during the approach process and wear mechanism of a silicon AFM tip

    International Nuclear Information System (INIS)

    Chung, Koo-Hyun; Lee, Yong-Ha; Kim, Dae-Eun

    2005-01-01

    The wear of an atomic force microscope (AFM) tip is one of the crucial issues in AFM as well as in other probe-based applications. In this work, wear tests under extremely low normal load using an AFM were conducted. Also, in order to understand the nature of silicon tip wear, the wear characteristics of crystal silicon and amorphous silicon oxide layer were investigated by a high-resolution transmission electron microscope (HRTEM). It was found that fracture of the tip readily occurred due to impact during the approach process. Experimental results showed that the impact should be below 0.1 nN s to avoid significant fracture of the tip. Also, it was observed that wear of the amorphous layer, formed at the end of the tip, occurred at the initial stage of the silicon tip damage process. Based on Archard's wear law, the wear coefficient of the amorphous layer was in the range of 0.009-0.014. As for the wear characteristics of the silicon tip, it was shown that wear occurred gradually under light normal load and the wear rate decreased with increase in the sliding distance. As for the wear mechanism of the silicon tip, oxidation wear was identified to be the most significant. It was shown that the degree of oxidation was higher under high normal load and in a nitrogen environment, oxidation of the silicon tip was reduced

  20. The Aro 1 mm Survey of the Oxygen-Rich Envelope of Supergiant Star NML Cygnus

    Science.gov (United States)

    Edwards, Jessica L.; Ziurys, L. M.; Woolf, N. J.

    2011-06-01

    Although a number of molecular line surveys of carbon-rich circumstellar envelopes (CSE) have been performed, only one oxygen-rich CSE, that of VY Canis Majoris (VY CMa), has been studied in depth. The Arizona Radio Observatory (ARO) 1 mm survey of VY CMa showed a very different and interesting chemistry dominated by sulfur- and silicon-bearing compounds as well as a number of more exotic species. A similar survey of the oxygen rich star NML Cygnus (NML Cyg) from 215 to 285 GHz is currently under way using the ARO Sub-millimeter Telescope. Initial observations show that this circumstellar envelope appears to be as chemically rich as that of VY CMa. Molecules including 12CO, 13CO, 12CN, 13CN, HCN, HCO+, CS, SO{_2}, SiO and 30SiO have been observed in NML Cyg. Line profiles of this source also suggest that there may be multiple outflows and that the circumstellar envelope is not spherically symmetric. Current results will be presented.

  1. Multi-stage combustion using nitrogen-enriched air

    Science.gov (United States)

    Fischer, Larry E.; Anderson, Brian L.

    2004-09-14

    Multi-stage combustion technology combined with nitrogen-enriched air technology for controlling the combustion temperature and products to extend the maintenance and lifetime cycles of materials in contact with combustion products and to reduce pollutants while maintaining relatively high combustion and thermal cycle efficiencies. The first stage of combustion operates fuel rich where most of the heat of combustion is released by burning it with nitrogen-enriched air. Part of the energy in the combustion gases is used to perform work or to provide heat. The cooled combustion gases are reheated by additional stages of combustion until the last stage is at or near stoichiometric conditions. Additional energy is extracted from each stage to result in relatively high thermal cycle efficiency. The air is enriched with nitrogen using air separation technologies such as diffusion, permeable membrane, absorption, and cryogenics. The combustion method is applicable to many types of combustion equipment, including: boilers, burners, turbines, internal combustion engines, and many types of fuel including hydrogen and carbon-based fuels including methane and coal.

  2. Enhancement in photovoltaic properties of silicon solar cells by surface plasmon effect of palladium nanoparticles

    Science.gov (United States)

    Atyaoui, Malek; Atyaoui, Atef; Khalifa, Marwen; Elyagoubi, Jalel; Dimassi, Wissem; Ezzaouia, Hatem

    2016-04-01

    This work presents the surface Plasmon effect of Palladium nanoparticles (Pd NPs) on the photovoltaic properties of silicon solar cells. Pd NPs were deposited on the p-type silicon base of the n+/p junction using a chemical deposition method in an aqueous solution containing Palladium (II) Nitrate (PdNO3)2 and Ammonium Hydroxide (NH4OH) followed by a thermal treatment at 500 °C under nitrogen atmosphere. Chemical composition and surface morphology of the treated silicon base were examined by energy dispersive X-ray (EDX) spectroscopy, scanning electronic microscopy (SEM) and Atomic Force Microscopy (AFM). The effect of the deposited Pd NPs on the electrical properties was evaluated by the internal quantum efficiency (IQE) and current-voltage (I-V) measurements. The results indicate that the formation of the Pd NPs is accompanied by an enhanced light absorption and improved photovoltaic parameters.

  3. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  4. Enhanced nitrogen removal in trickling filter plants.

    Science.gov (United States)

    Dai, Y; Constantinou, A; Griffiths, P

    2013-01-01

    The Beaudesert Sewage Treatment Plant (STP), originally built in 1966 and augmented in 1977, is a typical biological trickling filter (TF) STP comprising primary sedimentation tanks (PSTs), TFs and humus tanks. The plant, despite not originally being designed for nitrogen removal, has been consistently achieving over 60% total nitrogen reduction and low effluent ammonium concentration of less than 5 mg NH3-N/L. Through the return of a NO3(-)-rich stream from the humus tanks to the PSTs and maintaining an adequate sludge age within the PSTs, the current plant is achieving a substantial degree of denitrification. Further enhanced denitrification has been achieved by raising the recycle flows and maintaining an adequate solids retention time (SRT) within the PSTs. This paper describes the approach to operating a TF plant to achieve a high degree of nitrification and denitrification. The effectiveness of this approach is demonstrated through the pilot plant trial. The results from the pilot trial demonstrate a significant improvement in nitrogen removal performance whilst maximising the asset life of the existing infrastructure. This shows great potential as a retrofit option for small and rural communities with pre-existing TFs that require improvements in terms of nitrogen removal.

  5. High resolution medium energy ion scattering study of silicon oxidation and oxy nitridation

    International Nuclear Information System (INIS)

    Gusev, E.P.; Lu, H.C.; Garfunkel, E.; Gustafsson, T.

    1998-01-01

    Full text: Silicon oxide is likely to remain the material of choice for gate oxides in microelectronics for the foreseeable future. As device become ever smaller and faster, the thickness of these layers in commercial products is predicted to be less than 50 Angstroms in just a few years. An understanding of such devices will therefore likely to be based on microscopic concepts and should now be investigated by atomistic techniques. With medium energy ion scattering (MEIS) using an electrostatic energy analyzer, depth profiling of thin (<60 Angstroms) silicon oxide films on Si(100) with 3 - 5 Angstroms depth resolution in the near region has been done. The growth mechanism of thin oxide films on Si(100) has been studied, using sequential oxygen isotope exposures. It is found that the oxide films are stoichiometric to within approx. 10 Angstroms of the interface. It is also found that the oxidation reactions occur at the surface, in the transition region and at interface, with only the third region being included in the conventional (Deal-Grove) model for oxide formation. Nitrogen is sometimes added to gate oxides, as it has been found empirically that his improves some of the electrical properties. The role, location and even the amount of nitrogen that exists in such films are poorly understood, and represent interesting analytical challenges. MEIS data will be presented that address these questions, measured for a number of different processing conditions. We have recently demonstrated how to perform nitrogen nano-engineering in such ultrathin gate dielectrics, and these results will also be discussed

  6. Nitrogen-rich functional groups carbon nanoparticles based fluorescent pH sensor with broad-range responding for environmental and live cells applications.

    Science.gov (United States)

    Shi, Bingfang; Su, Yubin; Zhang, Liangliang; Liu, Rongjun; Huang, Mengjiao; Zhao, Shulin

    2016-08-15

    A nitrogen-rich functional groups carbon nanoparticles (N-CNs) based fluorescent pH sensor with a broad-range responding was prepared by one-pot hydrothermal treatment of melamine and triethanolamine. The as-prepared N-CNs exhibited excellent photoluminesence properties with an absolute quantum yield (QY) of 11.0%. Furthermore, the N-CNs possessed a broad-range pH response. The linear pH response range was 3.0 to 12.0, which is much wider than that of previously reported fluorescent pH sensors. The possible mechanism for the pH-sensitive response of the N-CNs was ascribed to photoinduced electron transfer (PET). Cell toxicity experiment showed that the as-prepared N-CNs exhibited low cytotoxicity and excellent biocompatibility with the cell viabilities of more than 87%. The proposed N-CNs-based pH sensor was used for pH monitoring of environmental water samples, and pH fluorescence imaging of live T24 cells. The N-CNs is promising as a convenient and general fluorescent pH sensor for environmental monitoring and bioimaging applications. Copyright © 2016 Elsevier B.V. All rights reserved.

  7. Synthesis of low-oxide blue luminescent alkyl-functionalized silicon nanoparticles with no nitrogen containing surfactant

    International Nuclear Information System (INIS)

    Thomas, Jason A.; Ashby, Shane P.; Huld, Frederik; Pennycook, Timothy J.; Chao, Yimin

    2015-01-01

    Of ever growing interest in the fields of physical chemistry and materials science, silicon nanoparticles show a great deal of potential. Methods for their synthesis are, however, often hazardous, expensive or otherwise impractical. In the literature, there is a safe, fast and cheap inverse micelle-based method for the production of alkyl-functionalized blue luminescent silicon nanoparticles, which nonetheless found limitations, due to undesirable Si-alkoxy and remaining Si–H functionalization. In the following work, these problems are addressed, whereby an optimisation of the reaction mechanism encourages more desirable capping, and the introduction of alcohol is replaced by the use of anhydrous copper (II) chloride. The resulting particles, when compared with their predecessors through a myriad of spectroscopic techniques, are shown to have greatly reduced levels of ‘undesirable’ capping, with a much lower surface oxide level; whilst also maintaining long-term air stability, strong photoluminescence and high yields

  8. Synthesis of low-oxide blue luminescent alkyl-functionalized silicon nanoparticles with no nitrogen containing surfactant

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, Jason A.; Ashby, Shane P.; Huld, Frederik [University of East Anglia, School of Chemistry (United Kingdom); Pennycook, Timothy J. [SuperSTEM Laboratory, STFC Daresbury Campus (United Kingdom); Chao, Yimin, E-mail: y.chao@uea.ac.uk [University of East Anglia, School of Chemistry (United Kingdom)

    2015-05-15

    Of ever growing interest in the fields of physical chemistry and materials science, silicon nanoparticles show a great deal of potential. Methods for their synthesis are, however, often hazardous, expensive or otherwise impractical. In the literature, there is a safe, fast and cheap inverse micelle-based method for the production of alkyl-functionalized blue luminescent silicon nanoparticles, which nonetheless found limitations, due to undesirable Si-alkoxy and remaining Si–H functionalization. In the following work, these problems are addressed, whereby an optimisation of the reaction mechanism encourages more desirable capping, and the introduction of alcohol is replaced by the use of anhydrous copper (II) chloride. The resulting particles, when compared with their predecessors through a myriad of spectroscopic techniques, are shown to have greatly reduced levels of ‘undesirable’ capping, with a much lower surface oxide level; whilst also maintaining long-term air stability, strong photoluminescence and high yields.

  9. Effect of mixture ratios and nitrogen carrier gas flow rates on the morphology of carbon nanotube structures grown by CVD

    CSIR Research Space (South Africa)

    Malgas, GF

    2008-02-01

    Full Text Available This paper reports on the growth of carbon nanotubes (CNTs) by thermal Chemical Vapour Deposition (CVD) and investigates the effects of nitrogen carrier gas flow rates and mixture ratios on the morphology of CNTs on a silicon substrate by vaporizing...

  10. Hydrogenated amorphous silicon coatings may modulate gingival cell response

    Science.gov (United States)

    Mussano, F.; Genova, T.; Laurenti, M.; Munaron, L.; Pirri, C. F.; Rivolo, P.; Carossa, S.; Mandracci, P.

    2018-04-01

    Silicon-based materials present a high potential for dental implant applications, since silicon has been proven necessary for the correct bone formation in animals and humans. Notably, the addition of silicon is effective to enhance the bioactivity of hydroxyapatite and other biomaterials. The present work aims to expand the knowledge of the role exerted by hydrogen in the biological interaction of silicon-based materials, comparing two hydrogenated amorphous silicon coatings, with different hydrogen content, as means to enhance soft tissue cell adhesion. To accomplish this task, the films were produced by plasma enhanced chemical vapor deposition (PECVD) on titanium substrates and their surface composition and hydrogen content were analyzed by means of X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectrophotometry (FTIR) respectively. The surface energy and roughness were measured through optical contact angle analysis (OCA) and high-resolution mechanical profilometry respectively. Coated surfaces showed a slightly lower roughness, compared to bare titanium samples, regardless of the hydrogen content. The early cell responses of human keratinocytes and fibroblasts were tested on the above mentioned surface modifications, in terms of cell adhesion, viability and morphometrical assessment. Films with lower hydrogen content were endowed with a surface energy comparable to the titanium surfaces. Films with higher hydrogen incorporation displayed a lower surface oxidation and a considerably lower surface energy, compared to the less hydrogenated samples. As regards mean cell area and focal adhesion density, both a-Si coatings influenced fibroblasts, but had no significant effects on keratinocytes. On the contrary, hydrogen-rich films increased manifolds the adhesion and viability of keratinocytes, but not of fibroblasts, suggesting a selective biological effect on these cells.

  11. Transmission electron microscope study of neutron irradiation-induced defects in silicon

    International Nuclear Information System (INIS)

    Oshima, Ryuichiro; Kawano, Tetsuya; Fujimoto, Ryoji

    1994-01-01

    Commercial Czochralski-grown silicon (Cz-Si) and float-zone silicon (Fz-Si) wafers were irradiated with fission neutrons at various fluences from 10 19 to 10 22 n/cm 2 at temperatures ranging from 473 K to 1043 K. The irradiation induced defect structures were examined by transmission electron microscopy and ultra high voltage electron microscopy, which were compared with Marlowe code computer simulation results. It was concluded that the vacancy-type damage structure formed at 473 K were initiated from collapse of vacancy-rich regions of cascades, while interstitial type defect clusters formed by irradiation above 673 K were associated with interstitial oxygen atoms and free interstitials which diffused out of the cascades. Complex defect structures were identified to consist of {113} and {111} planar faults by the parallel beam illumination diffraction analysis. (author)

  12. The infrared emission of carbonaceous particles around C-rich IRAS sources

    International Nuclear Information System (INIS)

    Blanco, A.; Borghesi, A.; Fonti, S.; Orofino, V.; Strafella, F.

    1997-01-01

    The IRAS spectra of 23 carbon-rich sources have been fitted by means of an improved theoretical model based on the Leung-Spagna radiative transfer code and using extinction data obtained in their laboratory for different types of amorphous carbon and silicon carbide submicron particles. The agreement between observations and theoretical spectra is rather good. A comparison between the IRAS spectrum of the object 12447 + 0425 (RU Vir) and that recently obtained at UKIRT, for the same object but with higher resolution, seems to open new problems

  13. Nitrogen Recovery by Fe-Ti Alloy from Molten Lithium at High Temperatures

    International Nuclear Information System (INIS)

    Juro Yagi; Akihiro Suzuki; Takayuki Terai; Takeo Muroga

    2006-01-01

    Molten lithium will be used as a beam target of IFMIF (International Fusion Materials Irradiation Facility), and is also expected as a self-cooling and tritium breeding material in fusion reactors. Since tritium is generated in both cases, tritium recovery is required from viewpoints of safety and a feasible fuel cycle. Nitrogen impurity in the lithium, however, not only enhance corrosion to tubing materials, but also promote nitride contamination on a surface of yttrium, which is considered to be a tritium gettering candidate. In our previous study, nitrogen recovery by hot trap method with Fe + 5%Ti alloy as a gettering material showed a higher nitrogen reduction capacity than that with Ti or Cr metal. In this study, high temperature recovery of nitrogen with Fe-Ti alloy was examined to achieve more efficient recovery and higher recovery rate coefficient. Fe - 4%Ti alloy are fabricated by electron beam melting, and its thin plates (40 mm x 10 mm x 1 mm) are used in our experiments. The Fe - 4%Ti alloy plates were immersed into 25 g of liquid lithium in Mo crucible under Ar atmosphere. The crucible was put in a SUS316 stainless steel pot heated at 600, 700, or 800 o C up to 100 hours. A small portion of the liquid lithium in the crucible was sampled out with adequate time interval, and the nitrogen concentrations in the sampled lithium were observed by changing nitrogen to ammonia. Experiments using lithium containing about 100 wt. ppm of nitrogen at the beginning show that the nitrogen reduction became faster with temperature and the minimum achieved nitrogen concentration was less than 20 wppm in case of 800 C. SEM-EDS analysis on the plates after experiment shows a Ti-rich surface layer of tens of micrometers on the alloy immersed in lithium at 800 C, and XPS analysis indicates the surface layer is TiN, while no Ti-rich layer nor TiN were observed on the alloys immersed at 600 o C and 700 o C. By increasing temperature from 600 o C to 800 o C, the diffusion

  14. Root Ideotype Influences Nitrogen Transport and Assimilation in Maize

    Directory of Open Access Journals (Sweden)

    Julie Dechorgnat

    2018-04-01

    Full Text Available Maize (Zea mays, L. yield is strongly influenced by external nitrogen inputs and their availability in the soil solution. Overuse of nitrogen-fertilizers can have detrimental ecological consequences through increased nitrogen pollution of water and the release of the potent greenhouse gas, nitrous oxide. To improve yield and overall nitrogen use efficiency (NUE, a deeper understanding of nitrogen uptake and utilization is required. This study examines the performance of two contrasting maize inbred lines, B73 and F44. F44 was selected in Florida on predominantly sandy acidic soils subject to nitrate leaching while B73 was selected in Iowa on rich mollisol soils. Transcriptional, enzymatic and nitrogen transport analytical tools were used to identify differences in their N absorption and utilization capabilities. Our results show that B73 and F44 differ significantly in their genetic, enzymatic, and biochemical root nitrogen transport and assimilatory pathways. The phenotypes show a strong genetic relationship linked to nitrogen form, where B73 showed a greater capacity for ammonium transport and assimilation whereas F44 preferred nitrate. The contrasting phenotypes are typified by differences in root system architecture (RSA developed in the presence of both nitrate and ammonium. F44 crown roots were longer, had a higher surface area and volume with a greater lateral root number and density than B73. In contrast, B73 roots (primary, seminal, and crown were more abundant but lacked the defining features of the F44 crown roots. An F1 hybrid between B73 and F44 mirrored the B73 nitrogen specificity and root architecture phenotypes, indicating complete dominance of the B73 inbred. This study highlights the important link between RSA and nitrogen management and why both variables need to be tested together when defining NUE improvements in any selection program.

  15. Nitrogen uptake by heterotrophic bacteria and phytoplankton in the nitrate-rich Thames estuary

    NARCIS (Netherlands)

    Middelburg, J.J.; Nieuwenhuize, J.

    2000-01-01

    The uptake of ammonium, nitrate, amino acids and urea was examined in the nitrate-rich Thames estuary and adjacent area in the North Sea during February 1999. The majority of uptake was by heterotrophic bacteria, as demonstrated by addition of a prokaryotic inhibitor that lowered uptake rates by 82,

  16. Synthesis of Nitrogen-Doped Mesoporous Carbon for the Catalytic Oxidation of Ethylbenzene

    Science.gov (United States)

    Wang, Ruicong; Yu, Yifeng; Zhang, Yue; Lv, Haijun; Chen, Aibing

    2017-06-01

    Nitrogen-doped ordered mesoporous carbon (NOMC) was fabricated via a simple hard-template method by functionalized ionic liquids as carbon and nitrogen source, SBA-15 as a hard-template. The obtained NOMC materials have a high nitrogen content of 5.55 %, a high surface area of 446.2 m2 g-1, and an excellent performance in catalysing oxidation of ethylbenzene. The conversion rate of ethylbenzene can be up to 84.5% and the yield of acetophenone can be up to 69.9%, the results indicated that the NOMC materials have a faster catalytic rate and a higher production of acetophenone than catalyst-free and CMK-3, due to their uniform pore size, high surface area and rich active sites in the carbon pore walls.

  17. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  18. Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

    Science.gov (United States)

    Chow, Philippe K.; Yang, Wenjie; Hudspeth, Quentin; Lim, Shao Qi; Williams, Jim S.; Warrender, Jeffrey M.

    2018-04-01

    We demonstrate that pulsed laser melting (PLM) of thin 1, 5, and 10 nm-thick vapor-deposited gold layers on silicon enhances its room-temperature sub-band gap infrared absorption, as in the case of ion-implanted and PLM-treated silicon. The former approach offers reduced fabrication complexity and avoids implantation-induced lattice damage compared to ion implantation and pulsed laser melting, while exhibiting comparable optical absorptance. We additionally observed strong broadband absorptance enhancement in PLM samples made using 5- and 10-nm-thick gold layers. Raman spectroscopy and Rutherford backscattering analysis indicate that such an enhancement could be explained by absorption by a metastable, disordered and gold-rich surface layer. The sheet resistance and the diode electrical characteristics further elucidate the role of gold-supersaturation in silicon, revealing the promise for future silicon-based infrared device applications.

  19. Multiphoton-Excited Fluorescence of Silicon-Vacancy Color Centers in Diamond

    Science.gov (United States)

    Higbie, J. M.; Perreault, J. D.; Acosta, V. M.; Belthangady, C.; Lebel, P.; Kim, M. H.; Nguyen, K.; Demas, V.; Bajaj, V.; Santori, C.

    2017-05-01

    Silicon-vacancy color centers in nanodiamonds are promising as fluorescent labels for biological applications, with a narrow, nonbleaching emission line at 738 nm. Two-photon excitation of this fluorescence offers the possibility of low-background detection at significant tissue depth with high three-dimensional spatial resolution. We measure the two-photon fluorescence cross section of a negatively charged silicon vacancy (Si -V- ) in ion-implanted bulk diamond to be 0.74 (19 )×10-50 cm4 s /photon at an excitation wavelength of 1040 nm. Compared to the diamond nitrogen-vacancy center, the expected detection threshold of a two-photon excited Si -V center is more than an order of magnitude lower, largely due to its much narrower linewidth. We also present measurements of two- and three-photon excitation spectra, finding an increase in the two-photon cross section with decreasing wavelength, and we discuss the physical interpretation of the spectra in the context of existing models of the Si -V energy-level structure.

  20. Nitrogen limitation in natural populations of cyanobacteria (Spirulina and Oscillatoria spp.) and its effect on macromolecular synthesis

    International Nuclear Information System (INIS)

    van Rijn, J.; Shilo, M.

    1986-01-01

    Natural populations of the cyanobacteria Spirulina species and Oscillatoria species obtained from Israeli fish ponds were limited in growth by nitrogen availability in summer. Physiological indicators for nitrogen limitation, such as phycocyanin, chlorophyll a, and carbohydrate content, did not show clear evidence for nitrogen limited growth, since these organisms are capable of vertical migration from and to the nitrogen-rich bottom. By means of 14 C labeling of the cells under simulated pond conditions followed by cell fractionation into macromolecular compounds, it was found that carbohydrates synthesized at the lighted surface were partially utilized for dark protein synthesis at the bottom of these ponds

  1. Atomic state and characterization of nitrogen at the SiC/SiO2 interface

    International Nuclear Information System (INIS)

    Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

    2014-01-01

    We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO 2 ). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs

  2. Symmetry and structure of N-O shallow donor complexes in silicon

    International Nuclear Information System (INIS)

    Alt, H.Ch.; Wagner, H.E.

    2012-01-01

    Shallow donors in silicon related to nitrogen-oxygen complexes have been investigated by piezospectroscopy of their hydrogenic transitions in the far infrared. Complete stress dependences up to 0.25 GPa were obtained for the 1s→2p 0 and 1s→2p ± transitions of the most prominent members of the (N, O)-family, N-O-3 and N-O-5. Very unusual for shallow donors in silicon, the symmetry of the ground state wave function is T 2 -like. The lifting of orientational degeneracy for stress in the 〈1 0 0〉, 〈1 1 1〉, and 〈1 1 0〉 directions is compatible with a C 2v defect symmetry. Data from the other species of the (N, O)-family are indicative for the same symmetry. The microscopic structure of these centers, in part contradictory to present theoretical models, is discussed.

  3. Bainite transformation of low carbon Mn-Si TRIP-assisted multiphase steels: influence of silicon content on cementite precipitation and austenite retention

    International Nuclear Information System (INIS)

    Jacques, P.; Catlin, T.; Geerlofs, N.; Kop, T.; Zwaag, S. van der; Delannay, F.

    1999-01-01

    Studies dealing with TRIP-assisted multiphase steels have emphasized the crucial role of the bainite transformation of silicon-rich intercritical austenite in the achievement of a good combination of strength and ductility. The present work deals with the bainite transformation in two steels differing in their silicon content. It is shown that both carbon enrichment of residual austenite and cementite precipitation influences the kinetics of the bainite transformation. A minimum silicon content is found to be necessary in order to prevent cementite precipitation from austenite during the formation of bainitic ferrite in such a way as to allow stabilisation of austenite by carbon enrichment. (orig.)

  4. Variation of stable silicon isotopes. Analytical developments and applications in Precambrian geochemistry

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, Kathrin

    2010-05-28

    regarded as the most likely source of silica for the silicification process. Calculations show that classical water-rock interaction can not influence the silicon isotope variation due to the very low concentration of Si in seawater (49 ppm). The data are consistent with a two end-member component mixture between basalt and chert. The secular increase in chert isotope composition through time is confirmed by the present data. Possible factors that could account for different gradients of δ{sup 30}Si vs. δ{sup 18}O are changes of seawater isotope signature, the water temperature or secondary alteration. The last section describes potential changes in the source of Granitoids in the Archaean: the Si isotope perspective. Sodic tonalite-trondhjemite-granodiorite (TTG) intrusive units make up large components of the Archaean crust. In contrast, today's continental crust is more potassic in composition (GMS group: granite-monzonite-syenite). Processes that lead to this changeover from ''sodic'' to ''potassic'' crust are the subject of this section. Silicon isotope measurements were combined with major and trace element analyses on different generations of TTG and GMS group intrusive units from 3.55 to 3.10 Ga from the study area. δ{sup 30}Si-values show a slight temporal increase during different pluton generations, with sodic intrusive units demonstrating the lowest Si-isotope composition. The small increase in silicon isotope composition with time might be due to different temperature conditions in the source of granitoids, with Na-rich, light δ{sup 30}Si granitoids emerging at higher temperatures. A similarity in δ{sup 30}Si between Archaean K-rich plutons and Phanerozoic K-rich plutons is confirmed.

  5. Variation of stable silicon isotopes. Analytical developments and applications in Precambrian geochemistry

    International Nuclear Information System (INIS)

    Abraham, Kathrin

    2010-01-01

    likely source of silica for the silicification process. Calculations show that classical water-rock interaction can not influence the silicon isotope variation due to the very low concentration of Si in seawater (49 ppm). The data are consistent with a two end-member component mixture between basalt and chert. The secular increase in chert isotope composition through time is confirmed by the present data. Possible factors that could account for different gradients of δ 30 Si vs. δ 18 O are changes of seawater isotope signature, the water temperature or secondary alteration. The last section describes potential changes in the source of Granitoids in the Archaean: the Si isotope perspective. Sodic tonalite-trondhjemite-granodiorite (TTG) intrusive units make up large components of the Archaean crust. In contrast, today's continental crust is more potassic in composition (GMS group: granite-monzonite-syenite). Processes that lead to this changeover from ''sodic'' to ''potassic'' crust are the subject of this section. Silicon isotope measurements were combined with major and trace element analyses on different generations of TTG and GMS group intrusive units from 3.55 to 3.10 Ga from the study area. δ 30 Si-values show a slight temporal increase during different pluton generations, with sodic intrusive units demonstrating the lowest Si-isotope composition. The small increase in silicon isotope composition with time might be due to different temperature conditions in the source of granitoids, with Na-rich, light δ 30 Si granitoids emerging at higher temperatures. A similarity in δ 30 Si between Archaean K-rich plutons and Phanerozoic K-rich plutons is confirmed.

  6. Decomposition of silicon carbide at high pressures and temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Daviau, Kierstin; Lee, Kanani K. M.

    2017-11-01

    We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60 GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.

  7. Analysis of material modifications caused by nanosecond pulsed UV laser processing of SiC and GaN

    Energy Technology Data Exchange (ETDEWEB)

    Krueger, Olaf; Wernicke, Tim; Wuerfl, Joachim; Traenkle, Guenther [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Hergenroeder, Roland [ISAS-Institute for Analytical Sciences, Dortmund (Germany)

    2008-10-15

    The effects of direct UV laser processing on single crystal SiC in ambient air were investigated by cross-sectional transmission electron microscopy, Auger electron spectroscopy, and measurements of the electrical resistance using the transfer length method (TLM). Scanning electron microscopy was applied to study the morphology and dimensions of the laser-treated regions. After laser processing using a nanosecond pulsed solid-state laser the debris consisting of silicon oxide was removed by etching in buffered hydrofluoric acid. A layer of resolidified material remains at the surface indicating the thermal impact of the laser process. The Si/C ratio is significantly disturbed at the surface of the resolidified layer and approaches unity in a depth of several tens of nanometers. A privileged oxidation of carbon leaves elementary resolidified silicon at the surface, where nanocrystalline silicon was detected. Oxygen and nitrogen were detected near the surface down to a depth of some tens of nanometers. A conductive surface film is formed, which is attributed to the thermal impact causing the formation of the silicon-rich surface layer and the incorporation of nitrogen as dopant. No indications for microcrack or defect formation were found beneath the layer of resolidified material. (orig.)

  8. Low-temperature synthesis of silicon carbide powder using shungite

    International Nuclear Information System (INIS)

    Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

    2017-01-01

    The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

  9. Low-temperature synthesis of silicon carbide powder using shungite

    Energy Technology Data Exchange (ETDEWEB)

    Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

    2017-07-01

    The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

  10. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    International Nuclear Information System (INIS)

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  11. Porous silicon: silicon quantum dots for photonic applications

    International Nuclear Information System (INIS)

    Pavesi, L.; Guardini, R.

    1996-01-01

    Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

  12. Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

    Energy Technology Data Exchange (ETDEWEB)

    Vishwanath, V. [Applied Materials, 3225 Oakmead Village Drive, Santa Clara, CA 95052 (United States); Demenev, E. [Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, Trento (Italy); Department of Molecular Science and Nanosystems, Ca’Foscari University, Dorsoduro 2137, 30123 Venice (Italy); Giubertoni, D., E-mail: giuberto@fbk.eu [Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, Trento (Italy); Vanzetti, L. [Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, Trento (Italy); Koh, A.L. [Stanford Nanocharacterization Laboratory, Stanford University, 476 Lomita Mall, Stanford, CA 94305 (United States); Steinhauser, G. [Colorado State University, Environmental and Radiological Health Sciences, Fort Collins, CO 80523 (United States); Leibniz Universität Hannover, Institut für Radioökologie und Strahlenschutz, 30419 Hannover (Germany); Pepponi, G.; Bersani, M. [Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, Trento (Italy); Meirer, F., E-mail: f.meirer@uu.nl [Inorganic Chemistry and Catalysis, Utrecht University, Utrecht 3584 CG (Netherlands); Foad, M.A. [Applied Materials, 3225 Oakmead Village Drive, Santa Clara, CA 95052 (United States)

    2015-11-15

    Highlights: • Samples prepared by high fluence, low-energy PIII of AsH{sub 3}{sup +} on Si(1 0 0) were studied. • PIII is of high technological interest for ultra-shallow doping and activation. • We used a multi-technique approach to study the As-implanted surface. • We show that PIII presents a new set of problems that needs to be tackled. • The presented study goes toward understanding the root mechanisms involved. - Abstract: High fluence (>10{sup 15} ions/cm{sup 2}) low-energy (<2 keV) plasma immersion ion implantation (PIII) of AsH{sub 3}{sup +} on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As{sub 2}O{sub 3} micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.

  13. Nitrogen-Bearing, Indigenous Carbonaceous Matter in the Nakhla Mars Meteorite

    Science.gov (United States)

    Thomas-Keprta, K. L.; Clemett, S. J.; Messenger, S.; Rahman, Z.; Gibson, E. K.; Wentworth, S. J.; McKay, D. S.

    2017-01-01

    We report the identification of discrete assemblages of nitrogen (N)-rich organic matter entrapped within interior fracture surfaces of the martian meteorite Nakhla. Based on context, composition and isotopic measurements this organic matter is of demonstrably martian origin. The presence of N-bearing organic species is of considerable importance to the habitable potential and chemical evolution of the martian regolith.

  14. Nano-Welding of Multi-Walled Carbon Nanotubes on Silicon and Silica Surface by Laser Irradiation

    Directory of Open Access Journals (Sweden)

    Yanping Yuan

    2016-02-01

    Full Text Available In this study, a continuous fiber laser (1064 nm wavelength, 30 W/cm2 is used to irradiate multi-walled carbon nanotubes (MWCNTs on different substrate surfaces. Effects of substrates on nano-welding of MWCNTs are investigated by scanning electron microscope (SEM. For MWCNTs on silica, after 3 s irradiation, nanoscale welding with good quality can be achieved due to breaking C–C bonds and formation of new graphene layers. While welding junctions can be formed until 10 s for the MWCNTs on silicon, the difference of irradiation time to achieve welding is attributed to the difference of thermal conductivity for silica and silicon. As the irradiation time is prolonged up to 12.5 s, most of the MWCNTs are welded to a silicon substrate, which leads to their frameworks of tube walls on the silicon surface. This is because the accumulation of absorbed energy makes the temperature rise. Then chemical reactions among silicon, carbon and nitrogen occur. New chemical bonds of Si–N and Si–C achieve the welding between the MWCNTs and silicon. Vibration modes of Si3N4 appear at peaks of 363 cm−1 and 663 cm−1. There are vibration modes of SiC at peaks of 618 cm−1, 779 cm−1 and 973 cm−1. The experimental observation proves chemical reactions and the formation of Si3N4 and SiC by laser irradiation.

  15. Nano-Welding of Multi-Walled Carbon Nanotubes on Silicon and Silica Surface by Laser Irradiation

    Science.gov (United States)

    Yuan, Yanping; Chen, Jimin

    2016-01-01

    In this study, a continuous fiber laser (1064 nm wavelength, 30 W/cm2) is used to irradiate multi-walled carbon nanotubes (MWCNTs) on different substrate surfaces. Effects of substrates on nano-welding of MWCNTs are investigated by scanning electron microscope (SEM). For MWCNTs on silica, after 3 s irradiation, nanoscale welding with good quality can be achieved due to breaking C–C bonds and formation of new graphene layers. While welding junctions can be formed until 10 s for the MWCNTs on silicon, the difference of irradiation time to achieve welding is attributed to the difference of thermal conductivity for silica and silicon. As the irradiation time is prolonged up to 12.5 s, most of the MWCNTs are welded to a silicon substrate, which leads to their frameworks of tube walls on the silicon surface. This is because the accumulation of absorbed energy makes the temperature rise. Then chemical reactions among silicon, carbon and nitrogen occur. New chemical bonds of Si–N and Si–C achieve the welding between the MWCNTs and silicon. Vibration modes of Si3N4 appear at peaks of 363 cm−1 and 663 cm−1. There are vibration modes of SiC at peaks of 618 cm−1, 779 cm−1 and 973 cm−1. The experimental observation proves chemical reactions and the formation of Si3N4 and SiC by laser irradiation. PMID:28344293

  16. Ion induced segregation in gold nanostructured thin films on silicon

    International Nuclear Information System (INIS)

    Ghatak, J.; Satyam, P.V.

    2008-01-01

    We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au 2+ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6 x 10 13 , 1 x 10 14 and 5 x 10 14 ions cm -2 at a high beam flux of 6.3 x 10 12 ions cm -2 s -1 show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and 23 nm, respectively. At a lower fluence (6 x 10 13 ions cm -2 ) transport has been found to be associated with the formation of gold silicide (Au 5 Si 2 ). At a high fluence value of 5 x 10 14 ions cm -2 , disassociation of gold silicide and out-diffusion lead to the segregation of gold to defect - rich surface and interface regions.

  17. Down-conversion luminescence from (Ce, Yb) co-doped oxygen-rich silicon oxides

    International Nuclear Information System (INIS)

    Heng, C. L.; Wang, T.; Su, W. Y.; Wu, H. C.; Yin, P. G.; Finstad, T. G.

    2016-01-01

    We have studied down-conversion photoluminescence (PL) from (Ce, Yb) co-doped “oxygen rich” silicon oxide films prepared by sputtering and annealing. The Ce"3"+ ∼510 nm PL is sensitive to the Ce concentration of the films and is much stronger for 3 at. % Ce than for 2 at. % Ce after annealing at 1200 °C. The PL emission and excitation spectroscopy results indicate that the excitation of Yb"3"+ is mainly through an energy transfer from Ce"3"+ to Yb"3"+, oxide defects also play a role in the excitation of Yb"3"+ after lower temperature (∼800 °C) annealing. The Ce"3"+ 510 nm photon excites mostly only one Yb"3"+ 980 nm photon. Temperature-dependent PL measurements suggest that the energy transfer from Ce"3"+ to Yb"3"+ is partly thermally activated.

  18. Preservation of peptide moieties in three Spanish sulfur-rich Tertiary kerogens

    Energy Technology Data Exchange (ETDEWEB)

    Rio, J.C. del [Consejo Superior de Investigaciones Cientificas, Seville (Spain). Inst. de Recursos Naturales y Agrobiologia; Olivella, M.A.; Heras, F.X.D. de las [Escola Universitaria Politecnica de Manresa, Catalonia (Spain); Knicker, H. [Technische Universitaet Muenchen (Germany). Lehrstuhl fuer Bodenkunde

    2004-09-01

    Thermochemolysis with tetramethylammonium hydroxide (TMAH) and solid-state {sup 15}N NMR were utilized for the characterization of refractory organic nitrogen in Tertiary Spanish kerogens. The samples included sulfur-rich oil shales from the Ribesalbes (Serravallian), Libros (Tortonian) and Cerdanya (Tortonian) basins. Analysis using solid state {sup 15}N NMR showed that part of the refractory nitrogen in the kerogens corresponds to amide groups. Moreover, the release of amino acid derivatives after pyrolysis in the presence of TMAH indicated that this amide-N arose from peptide moieties. The amino acids released from the kerogens were dominated by high amounts of glycine and alanine. Minor amounts of aspartic acid, serine, {alpha}-aminobutyric acid and other unidentified amino acids were also detected. Because proteinaceous structures, including small peptides, are generally considered as being highly sensitive to diagenetic degradation, encapsulation of labile peptide material into aliphatic structures in S-rich kerogens (probably via lipid sulfurization) has been proposed to explain the survival of these moieties. Substantial amounts of fatty acids (as methyl esters) were also released from all the kerogens after pyrolysis/TMAH, indicating their highly aliphatic character. The production of both fatty acids and amino acids from the kerogens supports the encapsulation process. (author)

  19. High quality silicon-based substrates for microwave and millimeter wave passive circuits

    Science.gov (United States)

    Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

    2017-09-01

    Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous

  20. Compressive creep of silicon nitride

    International Nuclear Information System (INIS)

    Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

    1990-01-01

    Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

  1. Deterministic fabrication of dielectric loaded waveguides coupled to single nitrogen vacancy centers in nanodiamonds

    DEFF Research Database (Denmark)

    Siampour, Hamidreza; Kumar, Shailesh; Bozhevolnyi, Sergey I.

    We report on the fabrication of dielectric-loaded-waveguides which are excited by single-nitrogen-vacancy (NV) centers in nanodiamonds. The waveguides are deterministically written onto the pre-characterized nanodiamonds by using electron beam lithography of hydrogen silsesquioxane (HSQ) resist...... on silver-coated silicon substrate. Change in lifetime for NV-centers is observed after fabrication of waveguides and an antibunching in correlation measurement confirms that nanodiamonds contain single NV-centers....

  2. Integrated biological treatment of fowl manure for nitrogen recovery and reuse.

    Science.gov (United States)

    Posmanik, Roy; Nejidat, Ali; Bar-Sinay, Boaz; Gross, Amit

    2013-03-15

    Biowaste such as animal manure poses an environmental threat, due to among others, uncontrolled emissions of ammonia and additional hazardous gases to the atmosphere. This study presents a quantitative analysis of an alternative biowaste management approach aimed at nitrogen recovery and reduction of contamination risks. The suggested technology combines anaerobic digestion of nitrogen-rich biowaste with biofiltration of the resulting gaseous ammonia. A compost-based biofilter is used to capture the ammonia and convert it to nitrate by nitrifying microorganisms. Nitrogen mass balance was applied to quantify the system's capacity under various fowl manure-loading regimes and ammonia loading rates. The produced nitrate was recovered and its use as liquid fertilizer was evaluated with cucumber plant as a model crop. In addition, emissions of other hazardous gases (N(2)O, CH(4) and H(2)S) were monitored before and after biofiltration to evaluate the efficiency of the system for treating these gases. It was found that nitrate-rich liquid fertilizer can be continuously produced using the suggested approach, with an over 67 percentage of nitrogen recovery, under an ammonia loading rate of up to 40 g NH(3) per cubic meter biofilter per hour. Complete elimination of NH(3), H(2)S, CH(4) and N(2)O was achieved, demonstrating the potential of the suggested technology for mitigating emission of these gases from fowl manure. Moreover, the quality of the recovered fertilizer was demonstrated by higher yield performance of cucumber plant compared with control plants treated with a commonly applied organic liquid fertilizer. Copyright © 2013 Elsevier Ltd. All rights reserved.

  3. Nitrogen Cascade: An Opportunity to Integrate Biogeochemistry and Policy

    Science.gov (United States)

    Galloway, J. N.; Moomaw, W. R.; Theis, T. L.

    2008-12-01

    It began with micro-organisms millions of years ago, was enhanced by the burning of fossil carbon in the last several hundred years, and was magnified by a patent filed one hundred years ago. Today, the combined actions of cultivation-induced biological nitrogen fixation, fossil fuel combustion and the Haber-Bosch process have exceeded natural terrestrial processes in converting N22 to nitrogen compounds that are biologically, chemically or physically reactive (reactive nitrogen, Nr). While the benefits of Nr are well understood, many of the adverse consequences of excessive Nr are invisible from a policy perspective. Over the past century, the fundamental knowledge on nitrogen processes has advanced to the point where we have a good understanding of nitrogen's biogeochemical cycle, the role of humans in altering the cycle, and the consequences of the alterations. This knowledge has collectively led us to two conclusions-the consequences of intensive human influence on the nitrogen cycle leads to a cascade of ecosystem and human effects which need to be managed. Secondly, the management is complicated by the facts that it not only has to be integrated, but it also has to take into account that the management should not lower the ability of managed ecosystems to produce food for the world's peoples. The framework of the nitrogen cascade provides us with a structure for better identifying intervention points, and more effective policies, technologies and measures to prevent or mitigate the adverse impacts of reactive nitrogen, while enhancing its beneficial uses. We can now begin to use our understanding of science to set priorities and craft new policy strategies. For many regions of the world, the science is strong enough to manage nitrogen and there are existing tools to do so. However, the tools are not integrated, critical tools are missing and most importantly, there are nitrogen-rich regions of the world where the science is lacking, and nitrogen-poor regions

  4. A Reduced Reaction Scheme for Volatile Nitrogen Conversion in Coal Combustion

    DEFF Research Database (Denmark)

    Pedersen, Lars Saaby; Glarborg, Peter; Dam-Johansen, Kim

    1998-01-01

    In pulverised coal flames, the most important volatile nitrogen component forming NOx is HCN. To be able to model the nitrogen chemistry in coal flames it is necessary to have an adequate model for HCN oxidation. The present work was concerned with developing a model for HCN/NH3/NO conversion based...... that the CO/H-2 chemistry was described adequately, the reduced HCN/NH3/NO model compared very well with the detailed model over a wide range of stoichiometries. Decoupling of the HCN chemistry from the CO/H-2 chemistry resulted in over-prediction of the HCN oxidation rate under fuel rich conditions, but had...... negligible effect on the CO/H-2 chemistry. Comparison with simplified HCN models from the literature revealed significant differences, indicating that these models should be used cautiously in modelling volatile nitrogen conversion....

  5. Test-beam Results from a RICH Detector Prototype Using Aerogel Radiator and Pixel Hybrid Photon Detectors

    CERN Document Server

    Aglieri-Rinella, G; Van Lysebetten, A; Piedigrossi, D; Wyllie, K; Bellunato, T F; Calvi, M; Matteuzzi, C; Musy, M; Perego, D L; Somerville, L P; Newby, C; Easo, S; Wotton, S

    2006-01-01

    A test-beam study was performed at CERN with a Ring Imaging Cherenkov (RICH) prototype using three pixel Hybrid Photon Detectors. Results on the photon yield and Cherenkov angle resolution are presented here, for the Aerogel radiator and also for reference runs taken with Nitrogen radiator.

  6. Sequentially aerated membrane biofilm reactors for autotrophic nitrogen removal: microbial community composition and dynamics

    DEFF Research Database (Denmark)

    Pellicer i Nàcher, Carles; Franck, Stephanie; Gülay, Arda

    2014-01-01

    Membrane-aerated biofilm reactors performing autotrophic nitrogen removal can be successfully applied to treat concentrated nitrogen streams. However, their process performance is seriously hampered by the growth of nitrite oxidizing bacteria (NOB). In this work we document how sequential aeration...... (rich in oxygen) and AnAOB in regions neighbouring the liquid phase. Both communities were separated by a transition region potentially populated by denitrifying heterotrophic bacteria. AOB and AnAOB bacterial groups were more abundant and diverse than NOB, and dominated by the r......-strategists Nitrosomonas europaea and Ca. Brocadia anammoxidans, respectively. Taken together, the present work presents tools to better engineer, monitor and control the microbial communities that support robust, sustainable and efficient nitrogen removal....

  7. The recent performance of the Omega RICH detector in experiment WA89 at CERN

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, U [Mainz Univ. (Germany). Inst. fuer Kernphysik; [European Organization for Nuclear Research, Geneva (Switzerland). Div. Particle Physics Experiments; Beusch, W [European Organization for Nuclear Research, Geneva (Switzerland). Div. Particle Physics Experiments; Boss, M [Heidelberg Univ. (Germany). Physikalisches Inst.; Engelfried, J [Heidelberg Univ. (Germany). Physikalisches Inst.; Gerassimov, S G [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Klempt, W [European Organization for Nuclear Research, Geneva (Switzerland). Div. Particle Physics Experiments; Lennert, P [Heidelberg Univ. (Germany). Physikalisches Inst.; Martens, K [Heidelberg Univ. (Germany). Physikalisches Inst.; Newbold, D [Department of Physics, Univ., Bristol (United Kingdom); Rieseberg, H [Heidelberg Univ. (Germany). Physikalisches Inst.; Siebert, H W [Heidelberg Univ. (Germany). Physikalisches Inst.; Smith, V J [Department of Physics, Univ., Bristol (United Kingdom); Thilmann, O [Heidelberg Univ. (Germany). Physikalisches Inst.; Waelder, G [Heidelberg Univ. (Germany). Physikalisches Inst.

    1996-03-01

    The hyperon beam experiment WA89 at CERN uses the upgraded Omega RICH detector for identification of {pi}, K and p/p from {Sigma}{sup -}-N reactions. Cherenkov photons from a 5 m long nitrogen radiator are detected in drift chambers with TMAE-loaded ethane. Recent results on the performance of the detector are presented. (orig.).

  8. Deformation mechanisms of silicon during nanoscratching

    Energy Technology Data Exchange (ETDEWEB)

    Gassilloud, R.; Gasser, P.; Buerki, G.; Michler, J. [EMPA, Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Ballif, C. [University of Neuchatel, A.-L. Breguet 2, 2000 Neuchatel (Switzerland)

    2005-12-01

    The deformation mechanisms of silicon {l_brace}001{r_brace} surfaces during nanoscratching were found to depend strongly on the loading conditions. Nanoscratches with increasing load were performed at 2 {mu}m/s (low velocity) and 100 {mu}m/s (high velocity). The load-penetration-distance curves acquired during the scratching process at low velocity suggests that two deformation regimes can be defined, an elasto-plastic regime at low loads and a fully plastic regime at high loads. High resolution scanning electron microscopy of the damaged location shows that the residual scratch morphologies are strongly influenced by the scratch velocity and the applied load. Micro-Raman spectroscopy shows that after pressure release, the deformed volume inside the nanoscratch is mainly composed of amorphous silicon and Si-XII at low scratch speeds and of amorphous silicon at high speeds. Transmission electron microscopy shows that Si nanocrystals are embedded in an amorphous matrix at low speeds, whereas at high speeds the transformed zone is completely amorphous. Furthermore, the extend of the transformed zone is almost independent of the scratching speed and is delimited by a dislocation rich area that extends about as deep as the contact radius into the surface. To explain the observed phase and defect distribution a contact mechanics based decompression model that takes into account the load, the velocity, the materials properties and the contact radius in scratching is proposed. It shows that the decompression rate is higher at low penetration depth, which is consistent with the observation of amorphous silicon in this case. The stress field under the tip is computed using an elastic contact mechanics model based on Hertz's theory. The model explains the observed shape of the transformed zone and suggests that during load increase, phase transformation takes place prior to dislocation nucleation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  10. Effects of Reduced and Oxidised Nitrogen on Rich-Fen Mosses: a 4-Year Field Experiment

    NARCIS (Netherlands)

    Paulissen, Maurice P.C.P.; Bobbink, Roland; Robat, Sandra A.; Verhoeven, Jos T.A.

    2016-01-01

    Dutch fens, subjected to high nitrogen (N) deposition levels with reduced N (NHy) highly dominating over oxidised N (NOx), have since the second half of the past century seen a significant decline of Scorpidium and other characteristic brown moss species, while several Sphagnum species have

  11. Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix

    International Nuclear Information System (INIS)

    Hao, X.J.; Cho, E.-C.; Scardera, G.; Bellet-Amalric, E.; Bellet, D.; Shen, Y.S.; Huang, S.; Huang, Y.D.; Conibeer, G.; Green, M.A.

    2009-01-01

    Promise of Si nanocrystals highly depends on tailoring their behaviour through doping. Phosphorus-doped silicon nanocrystals embedded in a silicon dioxide matrix have been realized by a co-sputtering process. The effects of phosphorus-doping on the properties of Si nanocrystals are investigated. Phosphorus diffuses from P-P and/or P-Si to P-O upon high temperature annealing. The dominant X-ray photoelectron spectroscopy P 2p signal attributable to Si-P and/or P-P (130 eV) at 1100 o C indicates that the phosphorus may exist inside Si nanocrystals. It is found that existence of phosphorus enhances phase separation of silicon rich oxide and thereby Si crystallization. In addition, phosphorus has a considerable effect on the optical absorption and photoluminescence properties as a function of annealing temperature.

  12. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  13. Influence of implantation energy on the electrical properties of ultrathin gate oxides grown on nitrogen implanted Si substrates

    International Nuclear Information System (INIS)

    Kapetanakis, E.; Skarlatos, D.; Tsamis, C.; Normand, P.; Tsoukalas, D.

    2003-01-01

    Metal-oxide-semiconductor tunnel diodes with gate oxides, in the range of 2.5-3.5 nm, grown either on 25 or 3 keV nitrogen-implanted Si substrates at (0.3 or 1) x10 15 cm -2 dose, respectively, are investigated. The dependence of N 2 + ion implant energy on the electrical quality of the growing oxide layers is studied through capacitance, equivalent parallel conductance, and gate current measurements. Superior electrical characteristics in terms of interface state trap density, leakage current, and breakdown fields are found for oxides obtained through 3 keV nitrogen implants. These findings together with the full absence of any extended defect in the silicon substrate make the low-energy nitrogen implantation technique an attractive option for reproducible low-cost growth of nanometer-thick gate oxides

  14. Defect characterization in high-purity silicon after γ- and hadron irradiation

    International Nuclear Information System (INIS)

    Stahl, J.

    2004-07-01

    The challenge for silicon particle detectors in future high energy physics experiments caused by extreme radiation fields can only be met by an appropriate defect engineering of the starting material. Appreciable improvements had already been obtained by enriching high resistivity float zone silicon with oxygen as demonstrated by the CERN RD48 collaboration. This thesis will focus on the difference observed after irradiation between standard and oxygenated float zone and detector grade Czochralski silicon. Results obtained with diodes manufactured on epitaxial layers are also included, envisioning effects arising from the possible migration of impurities during the crystal growth from the oxygen rich Czochralski substrate. Deep level transient spectroscopy (DLTS) and thermally stimulated current (TSC) measurements have been performed for defect characterization after γ- and hadron irradiation. Also a new high resolution DLTS technique has been used for the first time to separate defect levels with similar parameters. During the microscopic studies additionally to the well known defects like VO i , V 2 , C i O i or VP, four new radiation induced defects have been discovered and characterized. Two of these defects are closely correlated with the detector performance: A deep acceptor labeled as I-defect, and a bistable donor (BD). The formation of the I-defect is strongly suppressed in oxygen rich materials, while the formation of the BD is suppressed in oxygen lean material. With their properties the I- and the BD-defect are able to explain the different macroscopic behavior of standard and oxygen enriched float zone silicon after γ-irradiation. Furthermore, the BD defect is most probably responsible for the observation that in Cz and Epi diodes space charge sign inversion does not occur even after high fluences of proton irradiation. Additionally the γ-irradiated diodes were annealed at temperatures between 100 C and 350 C. During these studies some new reaction

  15. Enthalpy of sublimation as measured using a silicon oscillator

    Science.gov (United States)

    Shakeel, Hamza; Pomeroy, J. M.

    In this study, we report the enthalpy of sublimation of common gases (nitrogen, oxygen, argon, carbon dioxide, neon, krypton, xenon, and water vapor) using a large area silicon oscillator with a sub-ng (~0.027 ng/cm2) mass sensitivity. The double paddle oscillator design enables high frequency stability (17 ppb) at cryogenic temperatures and provides a consistent technique for enthalpy measurements. The enthalpies of sublimation are derived from the rate of mass loss during programmed thermal desorption and are detected as a change in the resonance frequency of the self-tracking oscillator. These measured enthalpy values show excellent agreement with the accepted literature values.

  16. Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

    International Nuclear Information System (INIS)

    Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

    2004-01-01

    ·cm, concentration of carriers up to n∼4.33·10 17 cm -3 , mobility up to μ∼206 cm 2 /V·s, life time up to τ∼(5-10)·10 -6 s. We had been investigated spectral sensitivity and current-voltage characteristic of the epitaxial layer brought up from technical silicon + stannum at room temperature and at nitrogen one. The preliminary results of photoelectric measurement show advantage of the obtained structures for semiconductor instrument manufacture

  17. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  18. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  19. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  20. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun [Leibniz-Institut für Photonische Technologien, PF 100239, 07702 Jena (Germany); Himmerlich, Marcel; Krischok, Stefan [Institut für Mikro-und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau (Germany)

    2016-01-28

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  1. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  2. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    International Nuclear Information System (INIS)

    Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

    2009-01-01

    all spin-detected defects are also visible in the CPM spectra. Finally, the evaluation of CPM spectra in defect-rich microcrystalline silicon shows complete absence of any correlation between spin-detected defects and subband gap absorption determined from CPM: a result which casts considerable doubt on the usefulness of this technique for the determination of defect densities in microcrystalline silicon. The result can be related to the inhomogeneous structure of microcrystalline silicon with its consequences on transport and recombination processes

  3. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Science.gov (United States)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  4. Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Luis G. Gerling

    2015-10-01

    Full Text Available During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3 with high work functions (>5 eV were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3−x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~109 Ω/sq, although lower values (~104 Ω/sq were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV and conversion efficiency (12.7%, followed by MoO3 (581 mV, 12.6% and WO3 (570 mV, 11.8%. A short-circuit current gain of ~0.5 mA/cm2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants.

  5. Digestion of Alumina from Non-Magnetic Material Obtained from Magnetic Separation of Reduced Iron-Rich Diasporic Bauxite with Sodium Salts

    Directory of Open Access Journals (Sweden)

    Guanghui Li

    2016-11-01

    Full Text Available Recovery of iron from iron-rich diasporic bauxite ore via reductive roasting followed by magnetic separation has been explored recently. However, the efficiency of alumina extraction in the non-magnetic materials is absent. In this paper, a further study on the digestion of alumina by the Bayer process from non-magnetic material obtained after magnetic separation of reduced iron-rich diasporic bauxite with sodium salts was investigated. The results indicate that the addition of sodium salts can destroy the original occurrences of iron-, aluminum- and silicon-containing minerals of bauxite ore during reductive roasting. Meanwhile, the reactions of sodium salts with complex aluminum- and silicon-bearing phases generate diaoyudaoite and sodium aluminosilicate. The separation of iron via reductive roasting of bauxite ore with sodium salts followed by magnetic separation improves alumina digestion in the Bayer process. When the alumina-bearing material in bauxite ore is converted into non-magnetic material, the digestion temperature decreases significantly from 280 °C to 240 °C with a nearly 99% relative digestion ratio of alumina.

  6. Nitrogen and carbon source balance determines longevity, independently of fermentative or respiratory metabolism in the yeast Saccharomyces cerevisiae.

    Science.gov (United States)

    Santos, Júlia; Leitão-Correia, Fernanda; Sousa, Maria João; Leão, Cecília

    2016-04-26

    Dietary regimens have proven to delay aging and age-associated diseases in several eukaryotic model organisms but the input of nutritional balance to longevity regulation is still poorly understood. Here, we present data on the role of single carbon and nitrogen sources and their interplay in yeast longevity. Data demonstrate that ammonium, a rich nitrogen source, decreases chronological life span (CLS) of the prototrophic Saccharomyces cerevisiae strain PYCC 4072 in a concentration-dependent manner and, accordingly, that CLS can be extended through ammonium restriction, even in conditions of initial glucose abundance. We further show that CLS extension depends on initial ammonium and glucose concentrations in the growth medium, as long as other nutrients are not limiting. Glutamine, another rich nitrogen source, induced CLS shortening similarly to ammonium, but this effect was not observed with the poor nitrogen source urea. Ammonium decreased yeast CLS independently of the metabolic process activated during aging, either respiration or fermentation, and induced replication stress inhibiting a proper cell cycle arrest in G0/G1 phase. The present results shade new light on the nutritional equilibrium as a key factor on cell longevity and may contribute for the definition of interventions to promote life span and healthy aging.

  7. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  8. Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

    2001-01-01

    The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

  9. Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon

    International Nuclear Information System (INIS)

    Carder, D.A.; Markwitz, A.

    2009-01-01

    This report details the operation of the low-energy ion implanters at GNS Science for C, N and Si implantations. Two implanters are presented, from a description of the components through to instructions for operation. Historically the implanters have been identified with the labels 'industrial' and 'experimental'. However, the machines only differ significantly in the species of ions available for implantation and sample temperature during implantation. Both machines have been custom designed for research purposes, with a wide range of ion species available for ion implantation and the ability to implant two ions into the same sample at the same time from two different ion sources. A fast sample transfer capability and homogenous scanning profiles are featured in both cases. Samples up to 13 mm 2 can be implanted, with the ability to implant at temperatures down to liquid nitrogen temperatures. The implanters have been used to implant 28 Si + , 14 N + and 12 C + into silicon and glassy carbon substrates. Rutherford backscattering spectroscopy has been used to analyse the implanted material. From the data a Si 30 C 61 N 9 layer was measured extending from the surface to a depth of about 77 ± 2 nm for (100) silicon implanted with 12 C + and 14 N + at multiple energies. Silicon and nitrogen ion implantation into glassy carbon produced a Si (40.5 %), C (38 %), N (19.5 %) and O (2%) layer centred around a depth of 50 ± 2 nm from the surface. (author). 8 refs., 20 figs

  10. Solid state photochemistry. Subpanel A-2(b): Metastability in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, D. [Solarex Corporation, Newton, PA (United States)

    1996-09-01

    All device quality amorphous silicon based materials exhibit degradation in electronic properties when exposed to sunlight. The photo-induced defects are associated with Si dangling bonds that are created by the recombination and/or trapping of photogenerated carriers. The defects are metastable and can be annealed out at temperatures of about 150 to 200 degrees Centigrade. The density of metastable defects is larger in films that are contaminated with > 10{sup 19} per cubic cm of impurities such as oxygen, carbon and nitrogen. However, recent experimental results indicate that some metastable defects are still present in films with very low impurity concentrations. The photo-induced defects typically saturate after 100 to 1000 hours of exposure to one sun illumination depending on the deposition conditions. There is also experimental evidence that photo-induced structural changes are occurring in the amorphous silicon based materials and that hydrogen may be playing an important role in both the photo-induced structural changes and in the creation of metastable defects.

  11. Multi-Composite Bioactive Osteogenic Sponges Featuring Mesenchymal Stem Cells, Platelet-Rich Plasma, Nanoporous Silicon Enclosures, and Peptide Amphiphiles for Rapid Bone Regeneration

    Directory of Open Access Journals (Sweden)

    Dongmei Fan

    2011-06-01

    Full Text Available A novel bioactive sponge was created with a composite of type I collagen sponges or porous poly(e-caprolactone (PCL scaffolds, platelet-rich plasma (PRP, BMP2-loaded nanoporous silicon enclosure (NSE microparticles, mineralizing peptide amphiphiles (PA, and mesenchymal stem cells (MSC. Primary MSC from cortical bone (CB  tissue proved to form more and larger colony units, as well as produce more mineral matrix under osteogenic differentiation, than MSC from bone marrow (BM. Coating pre-treatments were optimized for maximum cell adhesion and mineralization, while a PRP-based gel carrier was created to efficiently deliver and retain MSC and  microparticles within a porous scaffold while simultaneously promoting cell recruitment, proliferation, and angiogenesis. Components and composite sponges were evaluated for osteogenic differentiation in vitro. Osteogenic sponges were loaded with MSC, PRP, PA, and NSE and implanted subcutaneously in rats to evaluate the formation of bone tissue and angiogenesis in vivo. It was found that the combination of a collagen sponge with CB MSC, PRP, PA, and the BMP2-releasing NSE formed the most bone and was most vascularized by four weeks compared to analogous composites featuring BM MSC or PCL or lacking PRP, PA, and NSE. This study indicates that CB MSC should be considered as an alternative to marrow as a source of stem cells, while the PRP-PA cell and microparticle delivery system may be utilized for diverse tissue engineering applications.

  12. Thermoluminescence properties of undoped and nitrogen-doped CVD diamond exposed to gamma radiation

    International Nuclear Information System (INIS)

    Barboza-Flores, M.; Gastelum, S.; Cruz-Zaragoza, E.; Melendrez, R.; Chernov, V.; Pedroza-Montero, M.; Favalli, A.

    2008-01-01

    It is known that the thermoluminescence (TL) performance of CVD diamond depends on the impurity concentration and doping materials introduced during growing. We report on the TL properties of undoped and 750 ppm nitrogen-doped CVD diamond grown on (0 0 1) silicon substrate. The samples were exposed to gamma radiation from a Gammacell 200 Nordion irradiator in the 10-500 Gy dose range at 627 mGy/min dose rate. The nitrogen-doped CVD diamond sample exhibited a TL glow curve peaked around 537 K and a small shoulder about 411 K and a linear dose behavior in the 10-60 Gy dose range. In contrast, the undoped specimen showed a 591 K peaked TL glow curve and linear dose response for 10-100 Gy doses. However, both samples displayed a non-linear dose response for doses higher than 100 Gy. The doping effects seem to cause a higher TL efficiency, which may be attributed to the differences in the diamond bonding and amorphous carbon on the CVD samples as well as to the presence of nitrogen. In addition, the nitrogen content may produce some structural and morphological surface effects, which may account for the distinctive TL features and dose response of the diamond samples

  13. Biochar application mode influences nitrogen leaching and NH3 volatilization losses in a rice paddy soil irrigated with N-rich wastewater.

    Science.gov (United States)

    Sun, Haijun; Min, Ju; Zhang, Hailin; Feng, Yanfang; Lu, Kouping; Shi, Weiming; Yu, Min; Li, Xuewen

    2017-07-11

    Impacts of biochar application mode on nitrogen (N) leaching, ammonia (NH 3 ) volatilization, rice grain yield and N use efficiency (NUE) are not well understood. Therefore, a field experiment was conducted to evaluate those impacts in a rice paddy soil received 225 kg N ha -1 from either urea or N-rich wastewater. One treatment received 10 t ha -1 biochar with the basal fertilization, and the other received same total amount of biochar but split applied with the three split N applications with same ratio as N fertilizer split ratio (40%, 30% and 30%). Results showed that N leaching loads were 4.20-6.22 kg ha -1 . Biochar one-time application reduced N leaching by 23.1%, and biochar split application further reduced N leaching by 32.4%. Total NH 3 volatilization loss was 15.5-24.5 kg ha -1 . Biochar one-time application did not influence the NH 3 volatilization, but biochar split application stimulated the cumulative NH 3 volatilization by 57.7%. Both biochar treatments had no influence on NUE and rice grain yield. In conclusion, biochar application mode indeed influences the N leaching and NH 3 volatilization in rice paddy soils, and biochar one-time application should be recommended for reducing N leaching without increasing NH 3 volatilization.

  14. Teores de silício no solo e na planta de arroz de terras altas com diferentes doses de adubação silicatada e nitrogenada Silicon contents in soil and in highland rice plants under different doses of silicon and nitrogen fertilization

    Directory of Open Access Journals (Sweden)

    M. Mauad

    2003-10-01

    Full Text Available O Si não é elemento essencial para o crescimento e desenvolvimento das plantas, porém sua absorção pode trazer inúmeros benefícios para culturas acumuladoras de Si, como o arroz. Entretanto, considerando o avançado grau de intemperização em que se encontram os solos tropicais, os teores de Si disponível nestes solos são baixos. O objetivo deste trabalho foi avaliar, na cultura do arroz de terras altas sob condições de túnel plástico, o efeito de doses de Si e de N na produção de matéria seca, na produtividade de grãos, no teor de N, nos teores de Si no solo e na planta e na quantidade de Si extraído do solo. Os tratamentos foram constituídos por três doses de N (5, 75 e 150 mg kg-1 de N, tendo como fonte a uréia e quatro doses de Si (0, 200, 400 e 600 mg kg-1 de SiO2 tendo como fonte o silicato de cálcio (Wollastonita. O delineamento experimental utilizado foi inteiramente casualizado com esquema fatorial 3 x 4, com cinco repetições. O acúmulo de matéria seca, a produtividade de grãos e os teores de N na planta não foram influenciados pelas doses de Si. O incremento da adubação nitrogenada aumentou a produção de matéria seca, a produtividade de grãos e o teor de N na planta, porém nenhum efeito foi encontrado para os teores de Si no solo. Houve interação N x Si para os teores de Si na planta e para a quantidade de Si acumulado pelas plantas.The element Silicon is not deemed essential for plant growth and development, but its absorption can benefit cumulative cultures like rice greatly. The Si content of tropical soils, however, is very low, due to the advanced weathering degree. The objective of this work was to evaluate the growth of rice plants in highlands under plastic tunnels and the effects of nitrogen (N and Si doses on dry matter production, grain productivity, N content; Si soil and plant contents; and on the amount of extracted silicon. The treatments consisted of three doses of N (5, 75, and 150

  15. "Cold" Fixation: Reconciliation of Nitrogen Fixation Rates and Diazotroph Assemblages in the Arctic Ocean

    Science.gov (United States)

    Fong, A. A.; Waite, A.; Rost, B.; Richter, K. U.

    2016-02-01

    Measurements of biological nitrogen fixation are typically conducted in oligotrophic subtropical and tropical marine environments where concentrations of fixed inorganic nitrogen are low. To date, only a handful of nitrogen fixation studies have been conducted in high latitude marine environments, but further investigation is needed to resolve the distribution of cold ocean diazotrophic assemblages. Nitrogen fixation rates and nifH gene distributions were measured at seven stations from 5°E to 20°E, north of 81°N in the Arctic Ocean at the onset of summer 2015. Discrete water samples in ice-covered regions were collected from the sea surface to 200 m for 15N2-tracer additions and targeted nifH gene and transcript analyses. Previous work suggests that heterotrophic bacteria dominate diazotrophic communities in the Arctic Ocean. Therefore, additional nifH gene surveys of sinking particles were conducted to test for enrichment on organic matter-rich microenvironments. Together, these measurements aim to reconcile diazotrophic activity with microbial community composition, further elucidating how nitrogen fixers could impact current concepts in polar carbon and nutrient cycling.

  16. Removing nitrogen from wastewater with side stream anammox: What are the trade-offs between environmental impacts?

    NARCIS (Netherlands)

    Hauck, M.; Maalcke-Luesken, F.A.; Jetten, M.S.M.; Huijbregts, M.A.J.

    2016-01-01

    Anaerobic ammonium oxidation (anammox) is a novel way to reduce nitrogen in ammonium rich wastewater. Although aquatic eutrophication will certainly be reduced, it is unknown how other environmental impacts may change by including anammox in the treatment of wastewater. Here, life cycle assessment

  17. Strain Identity of the Ectomycorrhizal Fungus Laccaria bicolor Is More Important than Richness in Regulating Plant and Fungal Performance under Nutrient Rich Conditions

    Directory of Open Access Journals (Sweden)

    Christina Hazard

    2017-09-01

    Full Text Available Effects of biodiversity on productivity are more likely to be expressed when there is greater potential for niche complementarity. In soil, chemically complex pools of nutrient resources should provide more opportunities for niche complementarity than chemically simple pools. Ectomycorrhizal (ECM fungal genotypes can exhibit substantial variation in nutrient acquisition traits and are key components of soil biodiversity. Here, we tested the hypothesis that increasing the chemical complexity and forms of soil nutrients would enhance the effects of intraspecific ECM diversity on host plant and fungal productivity. In pure culture, we found substantial variation in growth of strains of the ECM fungus Laccaria bicolor on a range of inorganic and organic forms of nutrients. Subsequent experiments examined the effects of intraspecific identity and richness using Scots pine (Pinus sylvestris seedlings colonized with different strains of L. bicolor growing on substrates supplemented with either inorganic or organic forms of nitrogen and phosphorus. Intraspecific identity effects on plant productivity were only found under the inorganic nutrient amendment, whereas intraspecific identity affected fungal productivity to a similar extent under both nutrient treatments. Overall, there were no significant effects of intraspecific richness on plant and fungal productivity. Our findings suggest soil nutrient composition does not interact strongly with ECM intraspecific richness, at least under experimental conditions where mineral nutrients were not limiting. Under these conditions, intraspecific identity of ECM fungi becomes more important than richness in modulating plant and fungal performance.

  18. Study on the preparation of boron-rich film by magnetron sputtering in oxygen atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Zhangmin; Yang, Yiming; Huang, Jian; Ren, Bing; Yu, Hongze; Xu, Run; Ji, Huanhuan; Wang, Lin; Wang, Linjun, E-mail: ljwang@shu.edu.cn

    2016-12-01

    Highlights: • Boron ({sup 10}B) oxide films were successfully grown using RF magnetron sputtering. • Effects of oxygen partial pressure on the property of the films were studied. • Substrates were covered with B-rich film and film surface was covered with B{sub 2}O{sub 3}. • The growth mechanism of films in oxygen atmosphere was analyzed using XPS. - Abstract: In this paper, the growth of boron ({sup 10}B) oxide films on (1 0 0) silicon substrate were achieved by radio frequency (r.f.) magnetron sputtering under the different oxygen partial pressure with a target of boron and boron oxide. The structure and properties of deposited films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy spectrometer (FTIR), X-ray photoelectron spectroscopy (XPS), respectively. The results showed that the substrate was covered with boron-rich films tightly and the surface of films was covered with B{sub 2}O{sub 3}. And the growth mechanism of boron-rich film in oxygen atmosphere was also analyzed.

  19. The high voltage system of the RICH and the multiplicity study with LHCb data

    CERN Document Server

    Fanchini, E; Pessina, G; Gys, T

    2011-01-01

    This thesis is about the work done during my PhD at the Univerità degli studi di Milano–Bicocca. During these three years I was involved in the RICH group of the LHCb experiment. LHCb is one of the four main experiments at CERN. It uses proton–proton collisions to study CP violation and to search for new physics beyond the Standard Model in the $b$ decays. One of the main feature of the experiment is the particle identification, performed with the Ring Imaging Cherenkov (RICH) technology. The RICH detects Cherenkov rings via photons emitted by charged particles traversing radiator materials. The photon detection system used consists of pixel Hybrid Photon Detectors (HPDs). They convert photons into photoelectrons which are then accelerated by means of a field generated by three electrodes, biased with high voltages (-18 kV, -17.7 kV and -14.8 kV), onto the silicon pixel anode. The energy released in the pixel is converted into a binary output. My work can be divided in two main parts: the hardware and th...

  20. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  1. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  2. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  3. Investigation of the heating behavior of carbide-bonded graphene coated silicon wafer used for hot embossing

    Science.gov (United States)

    Yang, Gao; Li, Lihua; Lee, Wing Bun; Ng, Man Cheung; Chan, Chang Yuen

    2018-03-01

    A recently developed carbide-bonded graphene (CBG) coated silicon wafer was found to be an effective micro-patterned mold material for implementing rapid heating in hot embossing processes owing to its superior electrical and thermal conductivity, in addition to excellent mechanical properties. To facilitate the achievement of precision temperature control in the hot embossing, the heating behavior of a CBG coated silicon wafer sample was experimentally investigated. First, two groups of controlled experiments were conducted for quantitatively evaluating the influence of the main factors such as the vacuum pressure and gaseous environment (vacuum versus nitrogen) on its heating performance. The electrical and thermal responses of this sample under a voltage of 60 V were then intensively analyzed, and revealed that it had somewhat semi-conducting properties. Further, we compared its thermal profiles under different settings of the input voltage and current limiting threshold. Moreover, the strong temperature dependence of electrical resistance for this material was observed and determined. Ultimately, the surface temperature of CBG coated silicon wafer could be as high as 1300 ℃, but surprisingly the graphene coating did not detach from the substrate under such an elevated temperature due to its strong thermal coupling with the silicon wafer.

  4. Production of technical silicon and silicon carbide from rice-husk

    Directory of Open Access Journals (Sweden)

    A. Z. Issagulov

    2014-10-01

    Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

  5. Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

    International Nuclear Information System (INIS)

    Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

    2012-01-01

    Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

  6. Study of the thermal effect on silicon surface induced by ion beam from plasma focus device

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Z., E-mail: pscientific5@aec.org.sy [Scientific Service Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Ahmad, M. [IBA Laboratory, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Chemistry Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Al-Hawat, Sh.; Akel, M. [Physics Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic)

    2017-04-01

    Structural modifications in form of ripples and cracks are induced by nitrogen ions from plasma focus on silicon surface. The investigation of such structures reveals correlation between ripples and cracks formation in peripheral region of the melt spot. The reason of such correlation and structure formation is explained as result of thermal effect. Melting and resolidification of the center of irradiated area occur within one micro second of time. This is supported by a numerical simulation used to investigate the thermal effect induced by the plasma focus ion beams on the silicon surface. This simulation provides information about the temperature profile as well as the dynamic of the thermal propagation in depth and lateral directions. In accordance with the experimental observations, that ripples are formed in latter stage after the arrival of last ion, the simulation shows that the thermal relaxation takes place in few microseconds after the end of the ion beam arrival. Additionally, the dependency of thermal propagation and relaxation on the distance of the silicon surface from the anode is presented.

  7. Laser desorption/ionization from nanostructured surfaces: nanowires, nanoparticle films and silicon microcolumn arrays

    International Nuclear Information System (INIS)

    Chen Yong; Luo Guanghong; Diao Jiajie; Chornoguz, Olesya; Reeves, Mark; Vertes, Akos

    2007-01-01

    Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12±1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3xω Nd:YAG laser in air, SF 6 or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to ∼2 μm in SF 6 gas and to ∼5 μm in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly (∼10x) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits

  8. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  9. Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

    Science.gov (United States)

    Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

    2014-04-01

    Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

  10. Preparation and Reaction Chemistry of Novel Silicon-Substituted 1,3-Dienes

    Directory of Open Access Journals (Sweden)

    Partha P. Choudhury

    2015-09-01

    Full Text Available 2-Silicon-substituted 1,3-dienes containing non transferrable groups known to promote transmetallation were prepared by Grignard chemistry and enyne metathesis. These dienes participated in one pot metathesis/Diels-Alder reactions in regio- and diastereoselective fashions. Electron-rich alkenes showed the fastest rates in metathesis reactions, and ethylene, a commonly used metathesis promoter slowed enyne metathesis. 2-Pyridyldimethylsilyl and 2-thienyldimethylsilyl substituted Diels-Alder cycloadducts participated in cross-coupling chemistry and the 2-thienyldimethylsilyl substituted cycloadducts underwent cross-coupling under very mild reaction conditions.

  11. Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

    International Nuclear Information System (INIS)

    Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

    2012-01-01

    In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

  12. Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

    KAUST Repository

    Yang, Xiaoming

    2014-10-01

    This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

  13. Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

    KAUST Repository

    Yang, Xiaoming; Zhong, Zhaowei; Diallo, Elhadj; Wang, Zhihong; Yue, Weisheng

    2014-01-01

    This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

  14. 21 CFR 862.1515 - Nitrogen (amino-nitrogen) test system.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Nitrogen (amino-nitrogen) test system. 862.1515... Systems § 862.1515 Nitrogen (amino-nitrogen) test system. (a) Identification. A nitrogen (amino-nitrogen) test system is a device intended to measure amino acid nitrogen levels in serum, plasma, and urine...

  15. Crystallization in Y-Si-Al-O-N glasses

    Energy Technology Data Exchange (ETDEWEB)

    Leng-Ward, G; Lewis, M H

    1985-05-01

    The development of crystallization in oxynitride glasses has been characterized using transmission electron microscopy and scanning electron microscopy, X-ray (energy-dispersive) microanalysis, and powder X-ray diffraction techniques. A series of glasses was prepared while maintaining the ratio of yttrium-to-silicon-to-aluminium, but replacing oxygen with nitrogen up to the nitrogen solubility limit. On annealing at 1250 C, the oxide glass fully crystallized into yttrium disilicate (Y2Si2O7). Al2O3 and mullite (Al6Si2O13) while, with increasing nitrogen content, the disilicate phase was progressively replaced by yttrium aluminium garnet (Y3Al5O12) and nitrogen was mainly incorporated into Si2N2O. Annealing of the nitrogen glasses at 1100 C produced partial crystallization involving an intermediate phase related to nitrogen-wollastonite. Phase separation in an as-quenched SiO2-rich Y-Si-Al-O composition glass is illustrated. 9 references.

  16. Biological nitrogen (N) fixation - The source of N nutrient to increase yield

    International Nuclear Information System (INIS)

    Heiling, M.; Hardarson, G.

    2006-01-01

    Nitrogen is an essential plant nutrient. It is the nutrient that is most commonly deficient, contributing to reduced agricultural yields throughout the world. Developing countries used more than 85 million metric tones of nitrogenous fertilizer in 2003, worth billions of US dollars. Such fertilizer expenditure can be significantly reduced by incorporating biological nitrogen fixed leguminous crops into a growing rotation. In leguminous crops, a symbiotic relationship between a bacterium called Rhizobium and legumes can provide large amounts of nitrogen to the plant and subsequently to soils where they are grown. In this process the bacteria form nodules on the root system and convert the nitrogen coming from air into molecules that can be absorbed by the plants. Beside their fertilizing properties, legumes are rich in protein and constitute a very important role in the human and animal nutrition. In the Soil Science Unit (SSU) of the FAO/IAEA Agriculture and Biotechnology Laboratory fellows from all over the world receive training in the use of 15 N stable isotope techniques to optimise the nitrogen fixation. Several parameters such as the placement of the nodules on the legume root system, the amount of soil mineral nitrogen and phosphorus fertilizer applied and the temperature have an impact on the amount of nitrogen fixed by the plant. It is therefore important to identify relative importance of these parameters on biological N fixation. The 15 N isotope dilution method is an appropriate technique to test the biological nitrogen fixation in the laboratory first. This useful knowledge can then be communicated to the farmers and can be tested under field conditions

  17. Uptake of fertilizer nitrogen and soil nitrogen by rice using 15N-labelled nitrogen fertilizer

    International Nuclear Information System (INIS)

    Reddy, K.R.; Patrick, W.H. Jr.

    1980-01-01

    Data from five field experiments using labelled nitrogen fertilizer were used to determine the relative effects of soil nitrogen and fertilizer nitrogen on rice yield. Yield of grain was closely correlated with total aboveground nitrogen uptake (soil + fertilizer), less closely correlated with soil nitrogen uptake and not significantly correlated with fertilizer nitrogen uptake. When yield increase rather than yield was correlated with fertilizer nitrogen uptake, the correlation coefficient was statistically significant. (orig.)

  18. Effect of nitrogen on the electrochemical performance of core–shell structured Si/C nanocomposites as anode materials for Li-ion batteries

    International Nuclear Information System (INIS)

    Tao, Hua-Chao; Huang, Mian; Fan, Li-Zhen; Qu, Xuanhui

    2013-01-01

    Highlights: ► N-containing core–shell structured Si/C nanocomposites are prepared via two steps. ► The N-containing Si/C nanocomposites exhibit high capacity and excellent cycling stability. ► The appropriate nitrogen has a beneficial effect on the electrochemical performance. -- Abstract: Core–shell structured Si/C nanocomposites with different nitrogen contents are prepared by in situ polymerization of aniline in the suspension of silicon nanoparticles followed by carbonization of Si/polyaniline (PANI) nanocomposites at different temperatures. The nitrogen contents of Si/C nanocomposites decrease gradually with increasing carbonization temperatures. The effect of nitrogen contents on the electrochemical performance of Si/C nanocomposites as anode materials for lithium ion batteries is investigated. It is found that the Si/C nanocomposites with 4.75 wt.% nitrogen exhibit the high specific capacity of 795 mAh g −1 after 50 cycles at a current density of 100 mA g −1 and excellent cycling stability. The appropriate nitrogen in Si/C nanocomposites plays a beneficial role in the improvement of electrochemical performance. The nitrogen in Si/C nanocomposites increases the reversible capacity, which may be due to the formation of vacancies and dangling bonds around the nitrogen sites

  19. Effect of Silicon application on Morpho-physiological Characteristics, Grain Yield and Nutrient Content of Bread Wheat under Water Stress Conditions

    Directory of Open Access Journals (Sweden)

    A. Karmollachaab

    2015-03-01

    Full Text Available In order to investigate the effect of silicon application on some physiological characteristics, yield and yield components, and grain mineral contents of bread wheat (Triticum aestivum under water stress condition, an experiment was conducted in Ramin Agriculture and Natural Resources University, Khuzestan, in 2012. The experiment was arranged in split-plots design in RCBD (Completely Randomized Blocks Design with three replications. Treatments consisted of drought stress (irrigation after 25, 50 and 75% depletion of Available Water Content in main plots and silicon (0, 10, 20 and 30 Kg Si ha-1 arranged in sub-plots. Results showed that the effect of drought stress was significant on most traits and led to the increase of electrolyte leakage (EL, cuticular wax, leaf and grain silicon content and grain nitrogen content. But drought led to negative impacts on grain yield and its components, and leaf potassium content, i.e. moderate and severe stresses reduced yield by 17% and 38% compared to control, respectively. Effect of silicon application was significant on all traits except for spike per square meter. Silicon had the greatest impact on EL and led to 35% decrease in this trait. Also, silicon led to increase in leaf and grain silicon contents and grain K content and grain yield and yield components, when applied at 30 kg ha-1. Generally, application of 30 kg ha-1 of silicon led to 6 and 14% increases of grain yield at the presence of moderate and severe drought stresses, respectively. Thus, given the abundance of silicon it can be used as an ameliorating element for planting bread wheat in drought-prone conditions.

  20. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

  1. Light emitting structures porous silicon-silicon substrate

    International Nuclear Information System (INIS)

    Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

    1999-01-01

    The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

  2. Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

    International Nuclear Information System (INIS)

    Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

    2000-01-01

    In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

  3. SILICON AND OXYGEN ABUNDANCES IN PLANET-HOST STARS

    International Nuclear Information System (INIS)

    Brugamyer, Erik; Dodson-Robinson, Sarah E.; Cochran, William D.; Sneden, Christopher

    2011-01-01

    The positive correlation between planet detection rate and host star iron abundance lends strong support to the core accretion theory of planet formation. However, iron is not the most significant mass contributor to the cores of giant planets. Since giant planet cores are thought to grow from silicate grains with icy mantles, the likelihood of gas giant formation should depend heavily on the oxygen and silicon abundance of the planet formation environment. Here we compare the silicon and oxygen abundances of a set of 76 planet hosts and a control sample of 80 metal-rich stars without any known giant planets. Our new, independent analysis was conducted using high resolution, high signal-to-noise data obtained at McDonald Observatory. Because we do not wish to simply reproduce the known planet-metallicity correlation, we have devised a statistical method for matching the underlying [Fe/H] distributions of our two sets of stars. We find a 99% probability that planet detection rate depends on the silicon abundance of the host star, over and above the observed planet-metallicity correlation. We do not detect any such correlation for oxygen. Our results would thus seem to suggest that grain nucleation, rather than subsequent icy mantle growth, is the important limiting factor in forming giant planets via core accretion. Based on our results and interpretation, we predict that planet detection should correlate with host star abundance for refractory elements responsible for grain nucleation and that no such trends should exist for the most abundant volatile elements responsible for icy mantle growth.

  4. Elementary budget of stag beetle larvae associated with selective utilization of nitrogen in decaying wood

    Science.gov (United States)

    Tanahashi, Masahiko; Ikeda, Hiroshi; Kubota, Kôhei

    2018-06-01

    Wood degradation by insects plays important roles for the forest matter cycling. Since wood is deficient in nitrogen compared to the insect body, wood-feeding insects need to assimilate the nitrogen selectively and discard an excess carbon. Such a stoichiometric imbalance between food and body will cause high metabolic cost; therefore, wood-feeding insects may somehow alleviate the stoichiometric imbalance. Here, we investigated the carbon and nitrogen budgets of the larvae of stag beetle, Dorcus rectus, which feed on decaying wood. Assimilation efficiency of ingested wood was 22%, and those values based on the carbon and nitrogen were 27 and 45%, respectively, suggesting the selective digestion of nitrogen in wood. Element-based gross growth efficiency was much higher for nitrogen (45%) than for carbon (3%). As a result, the larvae released 24% of the ingested carbon as volatile, whereas almost no gaseous exchange was observed for nitrogen. Moreover, solubility-based elementary analysis revealed that the larvae mainly utilized alkaline-soluble-water-insoluble fraction of wood, which is rich in nitrogen. Actually, the midgut of the larvae was highly alkaline (pH 10.3). Stag beetle larvae are known to exhibit coprophagy, and here we also confirmed that alkaline-soluble-water-insoluble nitrogen increased again from fresh feces to old feces in the field. Stable isotope analysis suggested the utilization of aerial nitrogen by larvae; however, its actual contribution is still disputable. Those results suggest that D. rectus larvae selectively utilize alkaline-soluble nitrogenous substrates by using their highly alkaline midgut, and perhaps associate with microbes that enhance the nitrogen recycling in feces.

  5. Elementary budget of stag beetle larvae associated with selective utilization of nitrogen in decaying wood.

    Science.gov (United States)

    Tanahashi, Masahiko; Ikeda, Hiroshi; Kubota, Kôhei

    2018-05-03

    Wood degradation by insects plays important roles for the forest matter cycling. Since wood is deficient in nitrogen compared to the insect body, wood-feeding insects need to assimilate the nitrogen selectively and discard an excess carbon. Such a stoichiometric imbalance between food and body will cause high metabolic cost; therefore, wood-feeding insects may somehow alleviate the stoichiometric imbalance. Here, we investigated the carbon and nitrogen budgets of the larvae of stag beetle, Dorcus rectus, which feed on decaying wood. Assimilation efficiency of ingested wood was 22%, and those values based on the carbon and nitrogen were 27 and 45%, respectively, suggesting the selective digestion of nitrogen in wood. Element-based gross growth efficiency was much higher for nitrogen (45%) than for carbon (3%). As a result, the larvae released 24% of the ingested carbon as volatile, whereas almost no gaseous exchange was observed for nitrogen. Moreover, solubility-based elementary analysis revealed that the larvae mainly utilized alkaline-soluble-water-insoluble fraction of wood, which is rich in nitrogen. Actually, the midgut of the larvae was highly alkaline (pH 10.3). Stag beetle larvae are known to exhibit coprophagy, and here we also confirmed that alkaline-soluble-water-insoluble nitrogen increased again from fresh feces to old feces in the field. Stable isotope analysis suggested the utilization of aerial nitrogen by larvae; however, its actual contribution is still disputable. Those results suggest that D. rectus larvae selectively utilize alkaline-soluble nitrogenous substrates by using their highly alkaline midgut, and perhaps associate with microbes that enhance the nitrogen recycling in feces.

  6. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  7. FTIR studies of swift silicon and oxygen ion irradiated porous silicon

    International Nuclear Information System (INIS)

    Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

    1999-01-01

    Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

  8. Suppression of carbon desorption from 4H-SiC by irradiating a remote nitrogen plasma at a low temperature

    Science.gov (United States)

    Shimabayashi, Masaharu; Kurihara, Kazuaki; Sasaki, Koichi

    2018-05-01

    We remotely irradiated a nitrogen plasma onto the carbon-side surface of 4H-SiC at a low temperature, and examined the effect of sample cooling on the characteristics of the nitride layer. An improved nitride layer, which had higher concentrations of carbon and silicon and a lower concentration of oxygen, was formed in the region at depths of more than 0.6–0.9 nm from the top surface. The depth of the fragile nitride layer in the top region, where no improved characteristics of the nitride layer were observed, became smaller with sample cooling. In addition, on the basis of the experimental results, we discussed the difference in the activation energy of the nitriding reaction of 4H-SiC supported by atomic nitrogen and molecular nitrogen in the metastable \\text{A}3Σ \\text{u} + state.

  9. Molecular nitrogen fixation and nitrogen cycle in nature

    Energy Technology Data Exchange (ETDEWEB)

    Virtanen, A I

    1952-01-01

    The origin of nitrogen oxides in the atmosphere is discussed. Evidently only a small proportion of the nitrate-and nitrite-nitrogen found in the precipitation is formed through electric discharges from molecular nitrogen, photochemical nitrogen fixation being probably of greater importance. Formation of nitrate nitrogen through atmospheric oxidation of nitrous oxide (N/sub 2/O) evaporating from the soil is also considered likely. Determination of nitrogen compounds at different altitudes is indispensable for gaining information of the N/sub 2/-fixation in the atmosphere and, in general, of the origin of nitrogen oxides and their decomposition. International cooperation is needed for this as well as for the quantitative determination of the nitrogen compounds removed from the soil by leaching and brought by waters into the seas.

  10. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  11. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  12. Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP

    International Nuclear Information System (INIS)

    Martil, I.; Prado, A. del; San Andres, E.; Gonzalez Diaz, G.; Martinez, F.L.

    2003-01-01

    We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiN x :H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions (defined in this article as the nitrogen to silicon ratio, x=N/Si) were analyzed: from Si-rich (x=0.97) to N-rich (x=1.6) films. The evolution of the composition, bonding configuration, and paramagnetic defects with the annealing temperature are explained by means of different network bond reactions that take place depending on the as-deposited film composition. All the analyzed films release hydrogen, while Si-rich and near-stoichiometric (x=1.43) ones also lose nitrogen upon annealing. These films were used to make Al/SiN x :H/semiconductor devices with Si, In 0.53 Ga 0.47 As, and InP. After RTA treatments, the electrical properties of the three different SiN x :H/semiconductor interfaces can be explained, noting the microstructural modifications that SiN x :H experiences upon annealing

  13. Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

    Directory of Open Access Journals (Sweden)

    Eugenijus SHATKOVSKIS

    2012-09-01

    Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

  14. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  15. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  16. Small angle neutron scattering modeling of copper-rich precipitates in steel

    International Nuclear Information System (INIS)

    Spooner, S.

    1997-11-01

    The magnetic to nuclear scattering intensity ratio observed in the scattering from copper rich precipitates in irradiated pressure vessel steels is much smaller than the value of 11.4 expected for a pure copper precipitate in iron. A model for precipitates in pressure vessel steels which matches the observed scattering typically incorporates manganese, nickel, silicon and other elements and it is assumed that the precipitate is non-magnetic. In the present work consideration is given to the effect of composition gradients and ferromagnetic penetration into the precipitate on the small angle scattering cross section for copper rich clusters as distinguished from conventional precipitates. The calculation is an extension of a scattering model for micelles which consist of shells of varying scattering density. A discrepancy between recent SANS scattering experiments on pressure vessel steels was found to be related to applied magnetic field strength. The assumption of cluster structure and its relation to atom probe FIM findings as well as the effects of insufficient field for magnetic saturation is discussed

  17. Discontinuous precipitation in a nickel-free high nitrogen austenitic stainless steel on solution nitriding

    DEFF Research Database (Denmark)

    Mohammadzadeh, Roghayeh; Akbari, Alireza; Grumsen, Flemming Bjerg

    2017-01-01

    Chromium-rich nitride precipitates in production of nickel-free austenitic stainless steel plates via pressurised solution nitriding of Fe–22.7Cr–2.4Mo ferritic stainless steel at 1473 K (1200 °C) under a nitrogen gas atmosphere was investigated. The microstructure, chemical and phase composition......, morphology and crystallographic orientation between the resulted austenite and precipitates were investigated using optical microscopy, X-ray Diffraction (XRD), Scanning and Transmission Electron Microscopy (TEM) and Electron Back Scatter Diffraction (EBSD). On prolonged nitriding, Chromium-rich nitride...... precipitates were formed firstly close to the surface and later throughout the sample with austenitic structure. Chromium-rich nitride precipitates with a rod or strip-like morphology was developed by a discontinuous cellular precipitation mechanism. STEM-EDS analysis demonstrated partitioning of metallic...

  18. The origin of traps and the effect of nitrogen plasma in oxide-nitride-oxide structures for non-volatile memories

    International Nuclear Information System (INIS)

    Kim, W. S.; Kwak, D. W.; Oh, J. S.; Lee, D. W.; Cho, H. Y.

    2010-01-01

    Ultrathin oxide-nitride-oxide (ONO) dielectric stacked layers are fundamental structures of silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory devices in which information is known to be stored as charges trapped in silicon nitride. Deep-level transient spectroscopy (DLTS) and a capacitance-voltage (CV) analysis were introduced to observe the trap behavior related to the memory effect in memory devices. The DLTS results verified that the nitride-related traps were a dominant factor in the memory effect. The energy of hole traps was 0.307 eV above the balance band. To improve the memory effects of the non-volatile memory devices with ONO structures, we introduced a nitrogen plasma treatment. After the N-plasma treatment, the flat-band voltage shift (ΔV FB ) was increased by about 1.5 times. The program and the erase (P-E) characteristics were also shown to be better than those for the as-ONO structure. In addition, the retention characteristics were improved by over 2.4 times.

  19. Autophagy supports biomass production and nitrogen use efficiency at the vegetative stage in rice.

    Science.gov (United States)

    Wada, Shinya; Hayashida, Yasukzu; Izumi, Masanori; Kurusu, Takamitsu; Hanamata, Shigeru; Kanno, Keiichi; Kojima, Soichi; Yamaya, Tomoyuki; Kuchitsu, Kazuyuki; Makino, Amane; Ishida, Hiroyuki

    2015-05-01

    Much of the nitrogen in leaves is distributed to chloroplasts, mainly in photosynthetic proteins. During leaf senescence, chloroplastic proteins, including Rubisco, are rapidly degraded, and the released nitrogen is remobilized and reused in newly developing tissues. Autophagy facilitates the degradation of intracellular components for nutrient recycling in all eukaryotes, and recent studies have revealed critical roles for autophagy in Rubisco degradation and nitrogen remobilization into seeds in Arabidopsis (Arabidopsis thaliana). Here, we examined the function of autophagy in vegetative growth and nitrogen usage in a cereal plant, rice (Oryza sativa). An autophagy-disrupted rice mutant, Osatg7-1, showed reduced biomass production and nitrogen use efficiency compared with the wild type. While Osatg7-1 showed early visible leaf senescence, the nitrogen concentration remained high in the senescent leaves. (15)N pulse chase analysis revealed suppression of nitrogen remobilization during leaf senescence in Osatg7-1. Accordingly, the reduction of nitrogen available for newly developing tissues in Osatg7-1 likely led its reduced leaf area and tillers. The limited leaf growth in Osatg7-1 decreased the photosynthetic capacity of the plant. Much of the nitrogen remaining in senescent leaves of Osatg7-1 was in soluble proteins, and the Rubisco concentration in senescing leaves of Osatg7-1 was about 2.5 times higher than in the wild type. Transmission electron micrographs showed a cytosolic fraction rich with organelles in senescent leaves of Osatg7-1. Our results suggest that autophagy contributes to efficient nitrogen remobilization at the whole-plant level by facilitating protein degradation for nitrogen recycling in senescent leaves. © 2015 American Society of Plant Biologists. All Rights Reserved.

  20. Understanding Nitrogen Fixation

    Energy Technology Data Exchange (ETDEWEB)

    Paul J. Chirik

    2012-05-25

    The purpose of our program is to explore fundamental chemistry relevant to the discovery of energy efficient methods for the conversion of atmospheric nitrogen (N{sub 2}) into more value-added nitrogen-containing organic molecules. Such transformations are key for domestic energy security and the reduction of fossil fuel dependencies. With DOE support, we have synthesized families of zirconium and hafnium dinitrogen complexes with elongated and activated N-N bonds that exhibit rich N{sub 2} functionalization chemistry. Having elucidated new methods for N-H bond formation from dihydrogen, C-H bonds and Broensted acids, we have since turned our attention to N-C bond construction. These reactions are particularly important for the synthesis of amines, heterocycles and hydrazines with a range of applications in the fine and commodity chemicals industries and as fuels. One recent highlight was the discovery of a new N{sub 2} cleavage reaction upon addition of carbon monoxide which resulted in the synthesis of an important fertilizer, oxamide, from the diatomics with the two strongest bonds in chemistry. Nitrogen-carbon bonds form the backbone of many important organic molecules, especially those used in the fertilizer and pharamaceutical industries. During the past year, we have continued our work in the synthesis of hydrazines of various substitution patterns, many of which are important precursors for heterocycles. In most instances, the direct functionalization of N{sub 2} offers a more efficient synthetic route than traditional organic methods. In addition, we have also discovered a unique CO-induced N{sub 2} bond cleavage reaction that simultaneously cleaves the N-N bond of the metal dinitrogen compound and assembles new C-C bond and two new N-C bonds. Treatment of the CO-functionalized core with weak Broensted acids liberated oxamide, H{sub 2}NC(O)C(O)NH{sub 2}, an important slow release fertilizer that is of interest to replace urea in many applications. The

  1. Effect of vegetation types on soil arbuscular mycorrhizal fungi and nitrogen-fixing bacterial communities in a karst region.

    Science.gov (United States)

    Liang, Yueming; Pan, Fujing; He, Xunyang; Chen, Xiangbi; Su, Yirong

    2016-09-01

    Arbuscular mycorrhizal (AM) fungi and nitrogen-fixing bacteria play important roles in plant growth and recovery in degraded ecosystems. The desertification in karst regions has become more severe in recent decades. Evaluation of the fungal and bacterial diversity of such regions during vegetation restoration is required for effective protection and restoration in these regions. Therefore, we analyzed relationships among AM fungi and nitrogen-fixing bacteria abundances, plant species diversity, and soil properties in four typical ecosystems of vegetation restoration (tussock (TK), shrub (SB), secondary forest (SF), and primary forest (PF)) in a karst region of southwest China. Abundance of AM fungi and nitrogen-fixing bacteria, plant species diversity, and soil nutrient levels increased from the tussock to the primary forest. The AM fungus, nitrogen-fixing bacterium, and plant community composition differed significantly between vegetation types (p fungi and nitrogen-fixing bacteria, respectively. Available phosphorus, total nitrogen, and soil organic carbon levels and plant richness were positively correlated with the abundance of AM fungi and nitrogen-fixing bacteria (p fungi and nitrogen-fixing bacteria increased from the tussock to the primary forest and highlight the essentiality of these communities for vegetation restoration.

  2. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    International Nuclear Information System (INIS)

    Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

    2015-01-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  3. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2015-10-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  4. Effect of molasses or cornmeal on milk production and nitrogen utilization of grazing organic dairy cows

    Science.gov (United States)

    Pasture is rich in soluble nitrogen (N) which is rapidly converted to ammonia in the rumen reducing N utilization in lactating dairy cows. Sucrose is more quickly degraded in the rumen than starch, suggesting that feeding molasses (MOL) to balance the supplies of energy and rumen degradable protein...

  5. Extreme drought decouples silicon and carbon geochemical linkages in lakes.

    Science.gov (United States)

    Li, Tianyang; Li, Siyue; Bush, Richard T; Liang, Chuan

    2018-09-01

    Silicon and carbon geochemical linkages were usually regulated by chemical weathering and organism activity, but had not been investigated under the drought condition, and the magnitude and extent of drought effects remain poorly understood. We collected a comprehensive data set from a total of 13 sampling sites covering the main water body of the largest freshwater lake system in Australia, the Lower Lakes. Changes to water quality during drought (April 2008-September 2010) and post-drought (October 2010-October 2013) were compared to reveal the effects of drought on dissolved silica (DSi) and bicarbonate (HCO 3 - ) and other environmental factors, including sodium (Na + ), pH, electrical conductivity (EC), chlorophyll a (Chl-a), total dissolved solids (TDS), dissolved inorganic nitrogen (DIN), total nitrogen (TN), total phosphorus (TP) and water levels. Among the key observations, concentrations of DSi and DIN were markedly lower in drought than in post-drought period while pH, EC and concentrations of HCO 3 - , Na + , Chl-a, TDS, TN, TP and the ratio TN:TP had inverse trends. Stoichiometric ratios of DSi:HCO 3 - , DSi:Na + and HCO 3 - :Na + were significantly lower in the drought period. DSi exhibited significantly negative relationships with HCO 3 - , and DSi:Na + was strongly correlated with HCO 3 - :Na + in both drought and post-drought periods. The backward stepwise regression analysis that could avoid multicollinearity suggested that DSi:HCO 3 - ratio in drought period had significant relationships with fewer variables when compared to the post-drought, and was better predictable using nutrient variables during post-drought. Our results highlight the drought effects on variations of water constituents and point to the decoupling of silicon and carbon geochemical linkages in the Lower Lakes under drought conditions. Copyright © 2018 Elsevier B.V. All rights reserved.

  6. Assessment of watershed scale nitrogen cycling and dynamics by hydrochemical modeling

    Science.gov (United States)

    Onishi, T.; Hiramatsu, K.; Somura, H.

    2017-12-01

    Nitrogen cycling in terrestrial areas is affecting water quality and ecosystem of aquatic area such as lakes and oceans through rivers. Owing to the intensive researches on nitrogen cycling in each different type of ecosystem, we acquired rich knowledge on nitrogen cycling of each ecosystem. On the other hand, since watershed are composed of many different kinds of ecosystems, nitrogen cycling in a watershed as a complex of these ecosystems is not well quantified. Thus, comprehensive understanding of nitrogen cycling of watersheds by modelling efforts are required. In this study, we attempted to construct hydrochemical model of the Ise Bay watershed to reproduce discharge, TN, and NO3 concentration. The model is based on SWAT (Soil and Water Assessment Tools) model. As anthropogenic impacts related to both hydrological cycling and nitrogen cycling, agricultural water intake/drainage, and domestic water intake/drainage were considered. In addition, fertilizer input to agricultural lands were also considered. Calibration period and validation period are 2004-2006, and 2007-2009, respectively. As a result of calibration using 2000 times LCS (Latin Cubic Sampling) method, discharge of rivers were reproduced fairly well with NS of 0.6-0.8. In contrast, the calibration result of TN and NO3 concentration tended to show overestimate values in spite of considering parameter uncertainties. This implies that unimplemented denitrification processes in the model. Through exploring the results, it is indicated that riparian areas, and agricultural drainages might be important spots for denitrification. Based on the result, we also attempted to evaluate the impact of climate change on nitrogen cycling. Though it is fully explored, this result will also be reported.

  7. Black manganese-rich crusts on a Gothic cathedral

    Science.gov (United States)

    Macholdt, Dorothea S.; Herrmann, Siegfried; Jochum, Klaus Peter; Kilcoyne, A. L. David; Laubscher, Thomas; Pfisterer, Jonas H. K.; Pöhlker, Christopher; Schwager, Beate; Weber, Bettina; Weigand, Markus; Domke, Katrin F.; Andreae, Meinrat O.

    2017-12-01

    Black manganese-rich crusts are found worldwide on the façades of historical buildings. In this study, they were studied exemplarily on the façade of the Freiburger Münster (Freiburg Minster), Germany, and measured in-situ by portable X-ray fluorescence (XRF). The XRF was calibrated to allow the conversion from apparent mass fractions to Mn surface density (Mn mass per area), to compensate for the fact that portable XRF mass fraction measurements from thin layers violate the assumption of a homogeneous measurement volume. Additionally, 200-nm femtosecond laser ablation-inductively coupled plasma-mass spectrometry (fs LA-ICP-MS) measurements, scanning transmission X-ray microscopy-near edge X-ray absorption fine structure spectroscopy (STXM-NEXAFS), Raman spectroscopy, and imaging by light microscopy were conducted to obtain further insight into the crust material, such as potential biogenic contributions, element distributions, trace element compositions, and organic functional groups. While black crusts of various types are present at many places on the minster's facade, crusts rich in Mn (with a Mn surface density >150 μg cm-2) are restricted to a maximum height of about 7 m. The only exceptions are those developed on the Renaissance-Vorhalle (Renaissance Portico) at a height of about 8 m. This part of the façade had been cleaned and treated with a silicon resin as recently as 2003. These crusts thus accumulated over a period of only 12 years. Yet, they are exceptionally Mn-rich with a surface density of 1200 μg cm-2, and therefore require an accumulation rate of about 100 μg cm-2 Mn per year. Trace element analyses support the theory that vehicle emissions are responsible for most of the Mn supply. Lead, barium, and zinc correlate with manganese, indicating that tire material, brake pads, and resuspended road dust are likely to be the element sources. Microscopic investigations show no organisms on or in the Mn-rich crusts. In contrast, Mn-free black

  8. Nitrogen

    Science.gov (United States)

    Apodaca, Lori E.

    2013-01-01

    The article presents an overview of the nitrogen chemical market as of July 2013, including the production of ammonia compounds. Industrial uses for ammonia include fertilizers, explosives, and plastics. Other topics include industrial capacity of U.S. ammonia producers CF Industries Holdings Inc., Koch Nitrogen Co., PCS Nitrogen, Inc., and Agrium Inc., the impact of natural gas prices on the nitrogen industry, and demand for corn crops for ethanol production.

  9. Design and fabrication of ultrathin silicon-nitride membranes for use in UV-visible airgap-based MEMS optical filters

    International Nuclear Information System (INIS)

    Ghaderi, Mohammadamir; Wolffenbuttel, Reinoud F.

    2016-01-01

    MEMS-based airgap optical filters are composed of quarter-wave thick high-index dielectric membranes that are separated by airgaps. The main challenge in the fabrication of these filters is the intertwined optical and mechanical requirements. The thickness of the layers decreases with design wavelength, which makes the optical performance in the UV more susceptible to fabrication tolerances, such as thickness and composition of the deposited layers, while the ability to sustain a certain level of residual stress by the structural strength becomes more critical. Silicon-nitride has a comparatively high Young's modulus and good optical properties, which makes it a suitable candidate as the membrane material. However, both the mechanical and optical properties in a silicon-nitride film strongly depend on the specifics of the deposition process. A design trade-off is required between the mechanical strength and the index of refraction, by tuning the silicon content in the silicon-nitride film. However, also the benefit of a high index of refraction in a silicon-rich film should be weighed against the increased UV optical absorption. This work presents the design, fabrication, and preliminary characterization of one and three quarter-wave thick silicon-nitride membranes with a one-quarter airgap and designed to give a spectral reflectance at 400 nm. The PECVD silicon-nitride layers were initially characterized, and the data was used for the optical and mechanical design of the airgap filters. A CMOS compatible process based on polysilicon sacrificial layers was used for the fabrication of the membranes. Optical characterization results are presented. (paper)

  10. Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

    International Nuclear Information System (INIS)

    Bhoraskar, V.N.

    2001-01-01

    The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

  11. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  12. Convenient and large-scale synthesis of nitrogen-rich hierarchical porous carbon spheres for supercapacitors and CO2 capture

    Science.gov (United States)

    Chang, Binbin; Zhang, Shouren; Yin, Hang; Yang, Baocheng

    2017-08-01

    Herein, considering the great potential of nitrogen-doped hierarchical porous carbons in energy storage and CO2 capture, we designed a convenient and easily large-scale production strategy for preparing nitrogen-doped hierarchical porous carbon sphere (NHPCS) materials. In this synthesis route, spherical resorcinol-formaldehyde (RF) resins were selected as carbon precursor, and then the ZnCl2-impregnated RF resin spheres were carbonized in a NH3 atmosphere at a temperature range of 600-800 °C. During the one-step heat-treatment process, nitrogen atom could be efficiently incorporated into the carbon skeleton, and the interconnected and hierarchical pore structure with different micro/mesopore proportion could be generated and tuned by adjusting the activating agent ZnCl2 dosage and carbonization temperature. The resultant nitrogen-doped hierarchical porous carbon sphere materials exhibited a satisfactory charge storage capacity, and the optimal sample of NHPCS-2-8 with a high mesopore proportion obtained at 800 °C with a ZnCl2/RF mass ratio of 2:1 presented a specific capacitance of 273.8 F g-1 at a current density of 0.5 A g-1. More importantly, the assembled NHPCS-2-8-based symmetric capacitor displayed a high energy density of 17.2 Wh kg-1 at a power density of 178.9 W kg-1 within a voltage window of 0 ∼ 1.8 V in 0.5 M Na2SO4 aqueous electrolyte. In addition, the CO2 capture application of these NHPCS materials was also explored, and the optimal sample of NHPCS-0-8 with a large micropore proportion prepared at 800 °C exhibited an exceptional CO2 uptake capacity at ambient pressures of up to 4.23 mmol g-1 at 0 °C.

  13. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  14. A convenient way of manufacturing silicon nanotubes on a silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

    2016-07-01

    A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

  15. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

    International Nuclear Information System (INIS)

    Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh

    2010-01-01

    Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10 18 cm -3 . The corresponding doping efficiency and hole mobility are ∼4.9% and 3.7 cm 2 /V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λ peak =529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

  16. Sorption Properties of Aerogel in Liquid Nitrogen

    Science.gov (United States)

    Johnson, Wesley L.

    2006-01-01

    Aerogel products are now available as insulation materials of the future. The Cryogenics Test Laboratory at the NASA Kennedy Space Center is developing aerogel-based thermal insulation systems for space launch applications. Aerogel beads (Cabot Nanogel ) and aerogel blankets (Aspen Aerogels Spaceloft ) have outstanding ambient pressure thermal performance that makes them useful for applications where sealing is not possible. Aerogel beads are open-celled silicone dioxide and have tiny pores that run throughout the body of the bead. It has also recently been discovered that aerogel beads can be used as a filtering device for aqueous compounds at room temperature. With their hydrophobic covering, the beads absorb any non-polar substance and they can be chemically altered to absorb hot gases. The combination of the absorption and cryogenic insulating properties of aerogel beads have never been studied together. For future cryogenic insulation applications, it is crucial to know how the beads react while immersed in cryogenic liquids, most notably liquid nitrogen. Aerogel beads in loose-fill situation and aerogel blankets with composite fiber structure have been tested for absorption properties. Depending on the type of aerogel used and the preparation, preliminary results show the material can absorb up to seven times its own weight of liquid nitrogen, corresponding to a volumetric ratio of 0.70 (unit volume nitrogen per unit volume aerogel). These tests allow for an estimate on how much insulation is needed in certain situations. The theory behind the different processes of sorption is necessary for a better understanding of the preparation of the beads before they are used in an insulation system.

  17. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  18. The use of nitrogen to improve the corrosion resistance of FeCrNiMo alloys for the chemical process industries

    Energy Technology Data Exchange (ETDEWEB)

    Kearns, J.R.; Deverell, H.E.

    1987-06-01

    The addition of 0.1 to 0.25 wt% nitrogen to austenitic alloys has been shown to enhance resistance to localized corrosion in oxidizing chloride and reducing acid solutions. Further tests of FeCrNiMo alloys assess the effects of nitrogen additions on: mechanical properties, chloride and caustic stress corrosion cracking resistance, passivation characteristics, and general corrosion rates in various acid, alkali, and salt solutions pertinent to the chemical process industries. The precipitation of chromium-rich secondary phases was retarded by solid solution additions of 0.1 to 0.25 wt% nitrogen. The corrosion resistance of FeCrNiMoN alloys in the welded condition was improved by using shield-gas mixtures of argon and 2.5 to 5.0 wt% nitrogen.

  19. Studies on the injuries of crops by harmful gases under covering. I. Injuries of vegetables by gaseous nitrogen dioxide and the conditions affecting crop susceptibility. [Eggplant

    Energy Technology Data Exchange (ETDEWEB)

    Kato, T; Tachibana, S; Inden, T

    1974-09-01

    The effects of environmental conditions such as soil-moisture humidity, and light on injuries to crops such as kidney bean, cucumber, tomato, and egg plant as well as the relationships between injury occurrence and plant nutrition, age of seedlings, and leaf position were investigated when the crops were exposed to gaseous nitrogen dioxide under a covering. The injury was severer when the soil moisture was richer and the humidity was higher. Injury was greater under dark conditions as opposed to light conditions before, during, and after NO/sub 2/ exposure. The first leaves of kidney bean plants were more susceptible to the gas when they were younger. Leaves with active metabolism (in the middle position) were the most susceptible to NO/sub 2/. Vegetables grown in fields or cultures poor in nitrogen were apparently susceptible to the gas, and those grown in ammonia-nitrogen rich cultures were more severely injured than those grown on nitrate-nitrogen rich cultures. Those grown in iron-deficient cultures were more susceptible to NO/sub 2/ than controls.

  20. Fluidized bed deposition and evaluation of silicon carbide coatings on microspheres

    International Nuclear Information System (INIS)

    Federer, J.I.

    1977-01-01

    The fuel element for the HTGR is an array of closely packed fuel microspheres in a carbonaceous matrix. A coating of dense silicon carbide (SiC), along with pyrocarbon layers, is deposited on the fueled microspheres to serve as a barrier against diffusion of fission products. The microspheres are coated with silicon carbide in a fluidized bed by reaction of methyltrichlorosilane (CH 3 SiCl 3 or MTS) and hydrogen at elevated temperatures. The principal variables of coating temperature and reactant gas composition (H 2 /MTS ratio) have been correlated with coating rate, morphology, stoichiometry, microstructure, and density. The optimum temperature for depositing highly dense coatings is in the range 1475 to 1675 0 C. Lower temperatures result in silicon-rich deposits, while higher temperatures may cause unacceptable porosity. The optimum H 2 /MTS ratio for highly dense coatings is 20 or more (approximately 5% MTS or less). The amount of grown-in porosity increases as the H 2 /MTS ratio decreases below 20. The requirement that the H 2 /MTS ratio be about 20 or more imposes a practical restraint on coating rate, since increasing the total flow rate would eventually expel microspheres from the coating tube. Evaluation of stoichiometry, morphology, and microstructure support the above mentioned optimum conditions of temperature and reactant gas composition. 18 figures, 3 tables

  1. Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

    Science.gov (United States)

    Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

    2018-01-01

    The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

  2. Fast readout of the COMPASS RICH CsI-MWPC chambers

    CERN Document Server

    Abbon, P; Deschampbs, H; Kunne, F; Gerasimov, S; Ketzer, B; Konorov, I; Kravtchuk, N; Magnon, A; Neyret, D; Panebianco, S; Paul, S; Rebourgeard, P; Tessaroto, F

    2006-01-01

    A new readout system for CsI-coated MWPCs, used in the COMPASS RICH detector, has been proposed and tested in nominal high-rate conditions. It is based on the APV25-S1 analog sampling chip, and will replace the Gassiplex chip readout used up to now. The APV chip, originally designed for silicon microstrip detectors, is shown to perform well even with “slow” signals from a MWPC, keeping a signal-to-noise ratio of 9. For every trigger the system reads three consecutive in-time samples, thus allowing to extract information on the signal shape and its timing. The effective time window is reduced from ∼3 μs for the Gassiplex to below 400 ns for the APV25-S1 chip, reducing pile-up events at high particle rate. A significant improvement of the signal-to-background ratio by a factor 5–6 with respect to the original readout has been measured in the central region of the RICH detector. Due to its pipelined architecture, the new readout system also considerably reduces the dead time per event, allowing efficien...

  3. Electronic structure of copper nitrides as a function of nitrogen content

    International Nuclear Information System (INIS)

    Gordillo, N.; Gonzalez-Arrabal, R.; Diaz-Chao, P.; Ares, J.R.; Ferrer, I.J.; Yndurain, F.; Agulló-López, F.

    2013-01-01

    The nitrogen content dependence of the electronic properties for copper nitride thin films with an atomic percentage of nitrogen ranging from 26 ± 2 to 33 ± 2 have been studied by means of optical (spectroscopic ellipsometry), thermoelectric (Seebeck), and electrical resistivity measurements. The optical spectra are consistent with direct optical transitions corresponding to the stoichiometric semiconductor Cu 3 N plus a free-carrier contribution, essentially independent of temperature, which can be tuned in accordance with the N-excess. Deviation of the N content from stoichiometry drives to significant decreases from − 5 to − 50 μV/K in the Seebeck coefficient and to large enhancements, from 10 −3 up to 10 Ω cm, in the electrical resistivity. Band structure and density of states calculations have been carried out on the basis of the density functional theory to account for the experimental results. - Highlights: ► Electronic structure of N-rich Cu 3 N ► Stoichiometric films behave as an intrinsic semiconductor. ► N excess drives to the introduction of a narrow band at the Fermi level. ► Decrease of the Seebeck coefficient when increasing nitrogen content ► Increase of the electrical resistivity when increasing nitrogen content

  4. CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

    Directory of Open Access Journals (Sweden)

    V. А. Pilipenko

    2017-01-01

    Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

  5. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  6. Nitrogen fixation (Acetylene reduction) in the sediments of the pluss-see : with special attention to the role of sedimentation

    NARCIS (Netherlands)

    Blauw, T.S.

    1987-01-01

    Sediments of productive lakes are usually rich in organic matter and, except for a thin surficial layer, anaerobic. These conditions seem to be favourable for heterotrophic nitrogen fixation. However, these sediments also contain relatively high ammonium concentrations. Ammonium represses

  7. Mechanical and tribological properties of silicon nitride films synthesized by ion beam enhanced deposition

    International Nuclear Information System (INIS)

    Chen Yuanru; Li Shizhuo; Zhang Xushou; Liu Hong; Yang Genqing; Qu Baochun

    1991-01-01

    This article describes preliminary investigations of mechanical and tribological properties of silicon nitride film formed by ion beam enhanced deposition (IBED) on GH37 (Ni-based alloys) steel. The films were synthesized by silicon vapor deposition with a rate of 1 A/s and by 40 keV nitrogen ion bombardment simultaneously. The thickness of the film was about 5000 A. X-ray photoelectron spectroscopy and infrared absorption spectroscopy revealed that a stoichiometric Si 3 N 4 film was formed. The observation of TEM showed that the IBED Si 3 N 4 film normally had an amorphous structure. However, electron diffraction patterns revealed a certain crystallinity. The mechanical and tribological properties of the films were investigated with a scratch tester, microhardness meter, and a ball-on-disc tribometer respectively. Results show that the adhesive strength between film and substrate is about 51 N, the Vickers microhardness with a load of 0.2 N is 980, the friction coefficient measured for steel against silicon nitride film ranges from 0.1 to 0.15, and the wear rate of coatings is about 6.8x10 -5 mm 3 /(mN). Finally, the relationship among thermal annealing, crystallinity and tribological characteristics of the Si 3 N 4 film is discussed. (orig.)

  8. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Science.gov (United States)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  9. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  10. Effects of sediment dredging on nitrogen cycling in Lake Taihu, China: Insight from mass balance based on a 2-year field study.

    Science.gov (United States)

    Yu, Juhua; Fan, Chengxin; Zhong, Jicheng; Zhang, Lu; Zhang, Lei; Wang, Changhui; Yao, Xiaolong

    2016-02-01

    Sediment dredging can permanently remove pollutants from an aquatic ecosystem, which is considered an effective approach to aquatic ecosystem restoration. In this work, a 2-year field simulation test was carried out to investigate the effect of dredging on nitrogen cycling across the sediment-water interface (SWI) in Lake Taihu, China. The results showed that simulated dredging applied to an area rich in total organic carbon (TOC) and total nitrogen (TN) slightly reduced the NH4(+)-N release from sediments while temporarily enhanced the NH4(+)-N release in an area with lower TOC and/or TN (in the first 180 days), although the application had a limited effect on the fluxes of NO2(-)-N and NO3(-)-N in both areas. Further analysis indicated that dredging induced decreases in nitrification, denitrification, and anaerobic ammonium oxidation (anammox) in sediments, notably by 76.9, 49.0, and 89.9%, respectively, in the TOC and/or TN-rich area. Therefore, dredging slowed down nitrogen cycling rates in sediments but did not increase N loading to overlying water. The main reason for the above phenomenon could be attributed to the removal of the surface sediments enriched with more TOC and/or TN (compared with the bottom sediments). Overall, to minimize internal N pollution, dredging may be more applicable to nutrient-rich sediments.

  11. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  12. Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

    OpenAIRE

    Wong , S Chien; Ramkissoon , Yashin D; Lopez , Mauricio; Page , Kristopher; Parkin , Ivan P; Sullivan , Paul M

    2009-01-01

    Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

  13. 15N/14N variations in Cretaceous Atlantic sedimentary sequences: implication for past changes in marine nitrogen biogeochemistry

    Science.gov (United States)

    Rau, G.H.; Arthur, M.A.; Dean, W.E.

    1987-01-01

    At two locations in the Atlantic Ocean (DSDP Sites 367 and 530) early to middle Cretaceous organic-carbon-rich beds ("black shales") were found to have significantly lower ??15N values (lower 15N/14N ratios) than adjacent organic-carbon-poor beds (white limestones or green claystones). While these lithologies are of marine origin, the black strata in particular have ??15N values that are significantly lower than those previously found in the marine sediment record and most contemporary marine nitrogen pools. In contrast, black, organic-carbon-rich beds at a third site (DSDP Site 603) contain predominantly terrestrial organic matter and have C- and N-isotopic compositions similar to organic matter of modern terrestrial origin. The recurring 15N depletion in the marine-derived Cretaceous sequences prove that the nitrogen they contain is the end result of an episodic and atypical biogeochemistry. Existing isotopic and other data indicate that the low 15N relative abundance is the consequence of pelagic rather than post-depositional processes. Reduced ocean circulation, increased denitrification, and, hence, reduced euphotic zone nitrate availability may have led to Cretaceous phytoplankton assemblages that were periodically dominated by N2-fixing blue-green algae, a possible source of this sediment 15N-depletion. Lack of parallel isotopic shifts in Cretaceous terrestrially-derived nitrogen (Site 603) argues that the above change in nitrogen cycling during this period did not extend beyond the marine environment. ?? 1987.

  14. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  15. Monitoring and modeling of nitrogen conversions in membrane-aerated biofilm reactors: Effects of intermittent aeration

    DEFF Research Database (Denmark)

    Ma, Yunjie

    Nitrogen can be removed from sewage by a variety of physicochemical and biological processes. Due to the high removal efficiency and relatively low costs, biological processes have been widely adopted for treating nitrogen-rich wastewaters. Among the biological technologies, biofilm processes show...... the membrane, whilst NH4+ is provid-ed from the bulk liquid phase. The counter substrate supply not only offers flexible aeration control, but also supports the development of a unique mi-crobial community and spatial structure inside the biofilm. In this study, lab-scale MABRs were operated under two types...... relevant biological N2O production pathways. Sensitive kinetic parameters were estimated with long-term bulk performance data. With the calibrated model, roles of HB and AnAOB were discussed and evaluated in mitigating N2O emissions in auto-trophic nitrogen removal MABRs. Moreover, I developed a 1-D...

  16. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  17. Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

    Science.gov (United States)

    Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

    1991-01-01

    A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

  18. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  19. Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

    Institute of Scientific and Technical Information of China (English)

    LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

    2004-01-01

    The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

  20. Anisotropic elasticity of silicon and its application to the modelling of X-ray optics

    International Nuclear Information System (INIS)

    Zhang, Lin; Barrett, Raymond; Cloetens, Peter; Detlefs, Carsten; Sanchez del Rio, Manuel

    2014-01-01

    Anisotropic elasticity of single-crystal silicon, applications to modelling of a bent X-ray mirror, and thermal deformation of a liquid-nitrogen-cooled monochromator crystal are presented. The crystal lattice of single-crystal silicon gives rise to anisotropic elasticity. The stiffness and compliance coefficient matrix depend on crystal orientation and, consequently, Young’s modulus, the shear modulus and Poisson’s ratio as well. Computer codes (in Matlab and Python) have been developed to calculate these anisotropic elasticity parameters for a silicon crystal in any orientation. These codes facilitate the evaluation of these anisotropy effects in silicon for applications such as microelectronics, microelectromechanical systems and X-ray optics. For mechanically bent X-ray optics, it is shown that the silicon crystal orientation is an important factor which may significantly influence the optics design and manufacturing phase. Choosing the appropriate crystal orientation can both lead to improved performance whilst lowering mechanical bending stresses. The thermal deformation of the crystal depends on Poisson’s ratio. For an isotropic constant Poisson’s ratio, ν, the thermal deformation (RMS slope) is proportional to (1 + ν). For a cubic anisotropic material, the thermal deformation of the X-ray optics can be approximately simulated by using the average of ν 12 and ν 13 as an effective isotropic Poisson’s ratio, where the direction 1 is normal to the optic surface, and the directions 2 and 3 are two normal orthogonal directions parallel to the optical surface. This average is independent of the direction in the optical surface (the crystal plane) for Si(100), Si(110) and Si(111). Using the effective isotropic Poisson’s ratio for these orientations leads to an error in thermal deformation smaller than 5.5%